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Title: Localized States due to Expulsion of Resonant Impurity Levels from the Continuum in Bilayer Graphene

Authors:
;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1102319
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 110; Journal Issue: 8; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Mkhitaryan, V. V., and Mishchenko, E. G. Localized States due to Expulsion of Resonant Impurity Levels from the Continuum in Bilayer Graphene. United States: N. p., 2013. Web. doi:10.1103/PhysRevLett.110.086805.
Mkhitaryan, V. V., & Mishchenko, E. G. Localized States due to Expulsion of Resonant Impurity Levels from the Continuum in Bilayer Graphene. United States. doi:10.1103/PhysRevLett.110.086805.
Mkhitaryan, V. V., and Mishchenko, E. G. Wed . "Localized States due to Expulsion of Resonant Impurity Levels from the Continuum in Bilayer Graphene". United States. doi:10.1103/PhysRevLett.110.086805.
@article{osti_1102319,
title = {Localized States due to Expulsion of Resonant Impurity Levels from the Continuum in Bilayer Graphene},
author = {Mkhitaryan, V. V. and Mishchenko, E. G.},
abstractNote = {},
doi = {10.1103/PhysRevLett.110.086805},
journal = {Physical Review Letters},
number = 8,
volume = 110,
place = {United States},
year = {2013},
month = {2}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevLett.110.086805

Citation Metrics:
Cited by: 8 works
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