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Title: Spin diffusion in fullerene-based devices: Morphology effect

Authors:
; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1102309
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 87; Journal Issue: 7; Journal ID: ISSN 1098-0121
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Nguyen, Tho D., Wang, Fujian, Li, Xiao-Guang, Ehrenfreund, Eitan, and Vardeny, Z. Valy. Spin diffusion in fullerene-based devices: Morphology effect. United States: N. p., 2013. Web. doi:10.1103/PhysRevB.87.075205.
Nguyen, Tho D., Wang, Fujian, Li, Xiao-Guang, Ehrenfreund, Eitan, & Vardeny, Z. Valy. Spin diffusion in fullerene-based devices: Morphology effect. United States. doi:10.1103/PhysRevB.87.075205.
Nguyen, Tho D., Wang, Fujian, Li, Xiao-Guang, Ehrenfreund, Eitan, and Vardeny, Z. Valy. Tue . "Spin diffusion in fullerene-based devices: Morphology effect". United States. doi:10.1103/PhysRevB.87.075205.
@article{osti_1102309,
title = {Spin diffusion in fullerene-based devices: Morphology effect},
author = {Nguyen, Tho D. and Wang, Fujian and Li, Xiao-Guang and Ehrenfreund, Eitan and Vardeny, Z. Valy},
abstractNote = {},
doi = {10.1103/PhysRevB.87.075205},
journal = {Physical Review B},
number = 7,
volume = 87,
place = {United States},
year = {2013},
month = {2}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevB.87.075205

Citation Metrics:
Cited by: 22 works
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