Spin diffusion in fullerene-based devices: Morphology effect
- Authors:
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1102309
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Physical Review B
- Additional Journal Information:
- Journal Volume: 87; Journal Issue: 7; Journal ID: ISSN 1098-0121
- Publisher:
- American Physical Society
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Nguyen, Tho D., Wang, Fujian, Li, Xiao-Guang, Ehrenfreund, Eitan, and Vardeny, Z. Valy. Spin diffusion in fullerene-based devices: Morphology effect. United States: N. p., 2013.
Web. doi:10.1103/PhysRevB.87.075205.
Nguyen, Tho D., Wang, Fujian, Li, Xiao-Guang, Ehrenfreund, Eitan, & Vardeny, Z. Valy. Spin diffusion in fullerene-based devices: Morphology effect. United States. https://doi.org/10.1103/PhysRevB.87.075205
Nguyen, Tho D., Wang, Fujian, Li, Xiao-Guang, Ehrenfreund, Eitan, and Vardeny, Z. Valy. Tue .
"Spin diffusion in fullerene-based devices: Morphology effect". United States. https://doi.org/10.1103/PhysRevB.87.075205.
@article{osti_1102309,
title = {Spin diffusion in fullerene-based devices: Morphology effect},
author = {Nguyen, Tho D. and Wang, Fujian and Li, Xiao-Guang and Ehrenfreund, Eitan and Vardeny, Z. Valy},
abstractNote = {},
doi = {10.1103/PhysRevB.87.075205},
journal = {Physical Review B},
number = 7,
volume = 87,
place = {United States},
year = {Tue Feb 19 00:00:00 EST 2013},
month = {Tue Feb 19 00:00:00 EST 2013}
}
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1103/PhysRevB.87.075205
https://doi.org/10.1103/PhysRevB.87.075205
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Cited by: 48 works
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