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Title: Quantum Anomalous Hall Effect in 2D Organic Topological Insulators

Authors:
; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1102216
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 110; Journal Issue: 19; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Wang, Z. F., Liu, Zheng, and Liu, Feng. Quantum Anomalous Hall Effect in 2D Organic Topological Insulators. United States: N. p., 2013. Web. doi:10.1103/PhysRevLett.110.196801.
Wang, Z. F., Liu, Zheng, & Liu, Feng. Quantum Anomalous Hall Effect in 2D Organic Topological Insulators. United States. doi:10.1103/PhysRevLett.110.196801.
Wang, Z. F., Liu, Zheng, and Liu, Feng. Mon . "Quantum Anomalous Hall Effect in 2D Organic Topological Insulators". United States. doi:10.1103/PhysRevLett.110.196801.
@article{osti_1102216,
title = {Quantum Anomalous Hall Effect in 2D Organic Topological Insulators},
author = {Wang, Z. F. and Liu, Zheng and Liu, Feng},
abstractNote = {},
doi = {10.1103/PhysRevLett.110.196801},
journal = {Physical Review Letters},
number = 19,
volume = 110,
place = {United States},
year = {2013},
month = {5}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevLett.110.196801

Citation Metrics:
Cited by: 117 works
Citation information provided by
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