Topological Insulating States in Laterally Patterned Ordinary Semiconductors

Journal Article · 02 May 2013 · Physical Review Letters

DOI: https://doi.org/10.1103/PhysRevLett.110.186601 · OSTI ID:1102202

Sushkov, O. P.; Castro Neto, A. H.

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• Sponsoring Organization: USDOE
• OSTI ID: 1102202
• Journal Information: Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 18 Vol. 110; ISSN 0031-9007; ISSN PRLTAO
• Publisher: American Physical SocietyCopyright Statement
• Country of Publication: United States
• Language: English