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  • Publisher's Accepted Manuscript: Topological Insulating States in Laterally Patterned Ordinary Semiconductors

Title: Topological Insulating States in Laterally Patterned Ordinary Semiconductors

Authors:
;
Publication Date:
Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 110; Journal Issue: 18; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1102202
Citation Formats
Sushkov, O. P., and Castro Neto, A. H.. Topological Insulating States in Laterally Patterned Ordinary Semiconductors. United States: N. p., Web. doi:10.1103/PhysRevLett.110.186601.
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Sushkov, O. P., & Castro Neto, A. H.. Topological Insulating States in Laterally Patterned Ordinary Semiconductors. United States. doi:10.1103/PhysRevLett.110.186601.
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Sushkov, O. P., and Castro Neto, A. H.. 2013. "Topological Insulating States in Laterally Patterned Ordinary Semiconductors". United States. doi:10.1103/PhysRevLett.110.186601.
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@article{osti_1102202,
title = {Topological Insulating States in Laterally Patterned Ordinary Semiconductors},
author = {Sushkov, O. P. and Castro Neto, A. H.},
abstractNote = {},
doi = {10.1103/PhysRevLett.110.186601},
journal = {Physical Review Letters},
number = 18,
volume = 110,
place = {United States},
year = {2013},
month = {5}
}
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