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Title: Topological Insulating States in Laterally Patterned Ordinary Semiconductors

Authors:
;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1102202
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 110; Journal Issue: 18; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Sushkov, O. P., and Castro Neto, A. H. Topological Insulating States in Laterally Patterned Ordinary Semiconductors. United States: N. p., 2013. Web. doi:10.1103/PhysRevLett.110.186601.
Sushkov, O. P., & Castro Neto, A. H. Topological Insulating States in Laterally Patterned Ordinary Semiconductors. United States. doi:10.1103/PhysRevLett.110.186601.
Sushkov, O. P., and Castro Neto, A. H. Fri . "Topological Insulating States in Laterally Patterned Ordinary Semiconductors". United States. doi:10.1103/PhysRevLett.110.186601.
@article{osti_1102202,
title = {Topological Insulating States in Laterally Patterned Ordinary Semiconductors},
author = {Sushkov, O. P. and Castro Neto, A. H.},
abstractNote = {},
doi = {10.1103/PhysRevLett.110.186601},
journal = {Physical Review Letters},
number = 18,
volume = 110,
place = {United States},
year = {2013},
month = {5}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevLett.110.186601

Citation Metrics:
Cited by: 26 works
Citation information provided by
Web of Science

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