Topological Insulating States in Laterally Patterned Ordinary Semiconductors

Sushkov, O. P.; Castro Neto, A. H.

doi:10.1103/PhysRevLett.110.186601

Title: Topological Insulating States in Laterally Patterned Ordinary Semiconductors

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Authors:: Sushkov, O. P.; Castro Neto, A. H.

Publication Date:: 2013-05-03

Sponsoring Org.:: USDOE

OSTI Identifier:: 1102202

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Physical Review Letters

Additional Journal Information:: Journal Volume: 110; Journal Issue: 18; Journal ID: ISSN 0031-9007

Publisher:: American Physical Society

Country of Publication:: United States

Language:: English

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                    Sushkov, O. P., and Castro Neto, A. H. Topological Insulating States in Laterally Patterned Ordinary Semiconductors.  United States: N. p., 2013. 
Web.  doi:10.1103/PhysRevLett.110.186601.

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                    Sushkov, O. P., & Castro Neto, A. H. Topological Insulating States in Laterally Patterned Ordinary Semiconductors.  United States.  https://doi.org/10.1103/PhysRevLett.110.186601

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                    Sushkov, O. P., and Castro Neto, A. H. Fri .  
"Topological Insulating States in Laterally Patterned Ordinary Semiconductors".  United States.  https://doi.org/10.1103/PhysRevLett.110.186601.

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@article{osti_1102202,

  title        = {Topological Insulating States in Laterally Patterned Ordinary Semiconductors},

  author       = {Sushkov, O. P. and Castro Neto, A. H.},

  abstractNote = {},

  doi          = {10.1103/PhysRevLett.110.186601},

  journal      = {Physical Review Letters},

  number       = 18,

  volume       = 110,

  place        = {United States},

  year         = {2013},

  month        = {5}

}

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