Topological Insulating States in Laterally Patterned Ordinary Semiconductors
- Authors:
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1102202
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Physical Review Letters
- Additional Journal Information:
- Journal Volume: 110; Journal Issue: 18; Journal ID: ISSN 0031-9007
- Publisher:
- American Physical Society
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Sushkov, O. P., and Castro Neto, A. H. Topological Insulating States in Laterally Patterned Ordinary Semiconductors. United States: N. p., 2013.
Web. doi:10.1103/PhysRevLett.110.186601.
Sushkov, O. P., & Castro Neto, A. H. Topological Insulating States in Laterally Patterned Ordinary Semiconductors. United States. https://doi.org/10.1103/PhysRevLett.110.186601
Sushkov, O. P., and Castro Neto, A. H. Fri .
"Topological Insulating States in Laterally Patterned Ordinary Semiconductors". United States. https://doi.org/10.1103/PhysRevLett.110.186601.
@article{osti_1102202,
title = {Topological Insulating States in Laterally Patterned Ordinary Semiconductors},
author = {Sushkov, O. P. and Castro Neto, A. H.},
abstractNote = {},
doi = {10.1103/PhysRevLett.110.186601},
journal = {Physical Review Letters},
number = 18,
volume = 110,
place = {United States},
year = {2013},
month = {5}
}
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1103/PhysRevLett.110.186601
https://doi.org/10.1103/PhysRevLett.110.186601
Other availability
Cited by: 36 works
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