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Title: Shallow Impurity Level Calculations in Semiconductors Using Ab Initio Methods

Authors:
; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1102104
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 110; Journal Issue: 16; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Zhang, Gaigong, Canning, Andrew, Grønbech-Jensen, Niels, Derenzo, Stephen, and Wang, Lin-Wang. Shallow Impurity Level Calculations in Semiconductors Using Ab Initio Methods. United States: N. p., 2013. Web. doi:10.1103/PhysRevLett.110.166404.
Zhang, Gaigong, Canning, Andrew, Grønbech-Jensen, Niels, Derenzo, Stephen, & Wang, Lin-Wang. Shallow Impurity Level Calculations in Semiconductors Using Ab Initio Methods. United States. doi:10.1103/PhysRevLett.110.166404.
Zhang, Gaigong, Canning, Andrew, Grønbech-Jensen, Niels, Derenzo, Stephen, and Wang, Lin-Wang. Fri . "Shallow Impurity Level Calculations in Semiconductors Using Ab Initio Methods". United States. doi:10.1103/PhysRevLett.110.166404.
@article{osti_1102104,
title = {Shallow Impurity Level Calculations in Semiconductors Using Ab Initio Methods},
author = {Zhang, Gaigong and Canning, Andrew and Grønbech-Jensen, Niels and Derenzo, Stephen and Wang, Lin-Wang},
abstractNote = {},
doi = {10.1103/PhysRevLett.110.166404},
journal = {Physical Review Letters},
number = 16,
volume = 110,
place = {United States},
year = {2013},
month = {4}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevLett.110.166404

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Cited by: 9 works
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