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Title: Kinetic Origin of Divergent Decompression Pathways in Silicon and Germanium

Authors:
; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1102077
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 110; Journal Issue: 16; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Wang, Jian-Tao, Chen, Changfeng, Mizuseki, Hiroshi, and Kawazoe, Yoshiyuki. Kinetic Origin of Divergent Decompression Pathways in Silicon and Germanium. United States: N. p., 2013. Web. doi:10.1103/PhysRevLett.110.165503.
Wang, Jian-Tao, Chen, Changfeng, Mizuseki, Hiroshi, & Kawazoe, Yoshiyuki. Kinetic Origin of Divergent Decompression Pathways in Silicon and Germanium. United States. doi:10.1103/PhysRevLett.110.165503.
Wang, Jian-Tao, Chen, Changfeng, Mizuseki, Hiroshi, and Kawazoe, Yoshiyuki. Mon . "Kinetic Origin of Divergent Decompression Pathways in Silicon and Germanium". United States. doi:10.1103/PhysRevLett.110.165503.
@article{osti_1102077,
title = {Kinetic Origin of Divergent Decompression Pathways in Silicon and Germanium},
author = {Wang, Jian-Tao and Chen, Changfeng and Mizuseki, Hiroshi and Kawazoe, Yoshiyuki},
abstractNote = {},
doi = {10.1103/PhysRevLett.110.165503},
journal = {Physical Review Letters},
number = 16,
volume = 110,
place = {United States},
year = {2013},
month = {4}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevLett.110.165503

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Cited by: 19 works
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