Optical Probing of Ultrafast Electronic Decay in Bi and Sb with Slow Phonons

Li, J. J.; Chen, J.; Reis, D. A.; Fahy, S.; Merlin, R.

doi:10.1103/PhysRevLett.110.047401

Title: Optical Probing of Ultrafast Electronic Decay in Bi and Sb with Slow Phonons

Full Record
Other Related Research

Authors:: Li, J. J.; Chen, J.; Reis, D. A.; Fahy, S.; Merlin, R.

Publication Date:: Thu Jan 24 00:00:00 EST 2013

Sponsoring Org.:: USDOE

OSTI Identifier:: 1101960

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Physical Review Letters

Additional Journal Information:: Journal Volume: 110; Journal Issue: 4; Journal ID: ISSN 0031-9007

Publisher:: American Physical Society

Country of Publication:: United States

Language:: English

Citation Formats


                    Li, J. J., Chen, J., Reis, D. A., Fahy, S., and Merlin, R. Optical Probing of Ultrafast Electronic Decay in Bi and Sb with Slow Phonons.  United States: N. p., 2013. 
Web.  doi:10.1103/PhysRevLett.110.047401.

Copy to clipboard


                    Li, J. J., Chen, J., Reis, D. A., Fahy, S., & Merlin, R. Optical Probing of Ultrafast Electronic Decay in Bi and Sb with Slow Phonons.  United States.  https://doi.org/10.1103/PhysRevLett.110.047401

Copy to clipboard


                    Li, J. J., Chen, J., Reis, D. A., Fahy, S., and Merlin, R. Thu .  
"Optical Probing of Ultrafast Electronic Decay in Bi and Sb with Slow Phonons".  United States.  https://doi.org/10.1103/PhysRevLett.110.047401.

Copy to clipboard


                    
@article{osti_1101960,

  title        = {Optical Probing of Ultrafast Electronic Decay in Bi and Sb with Slow Phonons},

  author       = {Li, J. J. and Chen, J. and Reis, D. A. and Fahy, S. and Merlin, R.},

  abstractNote = {},

  doi          = {10.1103/PhysRevLett.110.047401},

  journal      = {Physical Review Letters},

  number       = 4,

  volume       = 110,

  place        = {United States},

  year         = {Thu Jan 24 00:00:00 EST 2013},

  month        = {Thu Jan 24 00:00:00 EST 2013}

}

Copy to clipboard

Journal Article:

Free Publicly Available Full Text

Accepted Manuscript (Publisher)

Publisher's Version of Record
https://doi.org/10.1103/PhysRevLett.110.047401

Other availability

Search WorldCat to find libraries that may hold this journal

Citation Metrics:

Cited by: 49 works

Citation information provided by
Web of Science

Save / Share:

Export Metadata

Save to My Library

Similar Records in DOE PAGES and OSTI.GOV collections:

Observation of coherent optical phonons excited by femtosecond laser radiation in Sb films by ultrafast electron diffraction method

Journal Article Mironov, B. N. ; Kompanets, V. O. ; Aseev, S. A., E-mail: isanfemto@yandex.ru ; ... - Journal of Experimental and Theoretical Physics

The generation of coherent optical phonons in a polycrystalline antimony film sample has been investigated using femtosecond electron diffraction method. Phonon vibrations have been induced in the Sb sample by the main harmonic of a femtosecond Ti:Sa laser (λ = 800 nm) and probed by a pulsed ultrashort photoelectron beam synchronized with the pump laser. The diffraction patterns recorded at different times relative to the pump laser pulse display oscillations of electron diffraction intensity corresponding to the frequencies of vibrations of optical phonons: totally symmetric (A{sub 1g}) and twofold degenerate (E{sub g}) phonon modes. The frequencies that correspond to combinationsmore »« less
https://doi.org/10.1134/S1063776117020145
Strong Electron–Phonon Coupling and Self-Trapped Excitons in the Defect Halide Perovskites A ₃ M ₂ I ₉ (A = Cs, Rb; M = Bi, Sb)

Journal Article McCall, Kyle M. ; Stoumpos, Constantinos C. ; Kostina, Svetlana S. ; ... - Chemistry of Materials

The optical and electronic properties of Bridgman grown single crystals of the wide-bandgap semiconducting defect halide perovskites A3M2I9 (A = Cs, Rb; M = Bi, Sb) have been investigated. Intense Raman scattering was observed at room temperature for each compound, indicating high polarizability and strong electron–phonon coupling. Both low-temperature and room-temperature photoluminescence (PL) were measured for each compound. Cs3Sb2I9 and Rb3Sb2I9 have broad PL emission bands between 1.75 and 2.05 eV with peaks at 1.96 and 1.92 eV, respectively. The Cs3Bi2I9 PL spectra showed broad emission consisting of several overlapping bands in the 1.65–2.2 eV range. Evidence of strong electron–phononmore »« less
https://doi.org/10.1021/acs.chemmater.7b01184
Strong Electron–Phonon Coupling and Self-Trapped Excitons in the Defect Halide Perovskites A₃M₂I₉ (A = Cs, Rb; M = Bi, Sb)

Journal Article McCall, Kyle M. ; Stoumpos, Constantinos C. ; Kostina, Svetlana S. ; ... - Chemistry of Materials

The optical and electronic properties of Bridgman grown single crystals of the wide-bandgap semiconducting defect halide perovskites A₃M₂I₉ (A = Cs, Rb; M = Bi, Sb) have been investigated. Intense Raman scattering was observed at room temperature for each compound, indicating high polarizability and strong electron–phonon coupling. Both low-temperature and room-temperature photoluminescence (PL) were measured for each compound. Cs₃Sb₂I₉ and Rb₃Sb₂I₉ have broad PL emission bands between 1.75 and 2.05 eV with peaks at 1.96 and 1.92 eV, respectively. The Cs₃Bi₂I₉ PL spectra showed broad emission consisting of several overlapping bands in the 1.65–2.2 eV range. Evidence of strong electron–phononmore »« less
Cited by 451
https://doi.org/10.1021/acs.chemmater.7b01184

Full Text Available
Phonon scattering by dislocations at grain boundaries in polycrystalline Bi _0.5 Sb _1.5 Te ₃: Phonon scattering by dislocations at grain boundaries in pc-Bi _0.5 Sb _1.5 Te ₃

Journal Article Kim, Hyun-Sik ; Kim, Sang Il ; Lee, Kyu Hyoung ; ... - Physica Status Solidi B. Basic Solid State Physics
https://doi.org/10.1002/pssb.201600103
Electron-phonon interactions in MoS{sub 2} probed with ultrafast two-dimensional visible/far-infrared spectroscopy

Journal Article Guo, Xunmin ; Chen, Hailong ; Wen, Xiewen ; ... - Journal of Chemical Physics

An ultrafast two-dimensional visible/far-IR spectroscopy based on the IR/THz air biased coherent detection method and scanning the excitation frequencies is developed. The method allows the responses in the far-IR region caused by various electronic excitations in molecular or material systems to be observed in real time. Using the technique, the relaxation dynamics of the photo-excited carriers and electron/phonon coupling in bulk MoS{sub 2} are investigated. It is found that the photo-generation of excited carriers occurs within two hundred fs and the relaxation of the carriers is tens of ps. The electron-phonon coupling between the excitations of electrons and the phononmore »« less
https://doi.org/10.1063/1.4921573

Similar Records