Covalency, double-counting, and the metal-insulator phase diagram in transition metal oxides

Wang, Xin; Han, M. J.; de' Medici, Luca; Park, Hyowon; Marianetti, C. A.; Millis, Andrew J.

doi:10.1103/PhysRevB.86.195136

Title: Covalency, double-counting, and the metal-insulator phase diagram in transition metal oxides

Full Record
Other Related Research

Authors:: Wang, Xin; Han, M. J.; de' Medici, Luca; Park, Hyowon; Marianetti, C. A.; Millis, Andrew J.

Publication Date:: Mon Nov 26 00:00:00 EST 2012

Sponsoring Org.:: USDOE

OSTI Identifier:: 1101821

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Physical Review B

Additional Journal Information:: Journal Volume: 86; Journal Issue: 19; Journal ID: ISSN 1098-0121

Publisher:: American Physical Society

Country of Publication:: United States

Language:: English

Citation Formats


                    Wang, Xin, Han, M. J., de' Medici, Luca, Park, Hyowon, Marianetti, C. A., and Millis, Andrew J. Covalency, double-counting, and the metal-insulator phase diagram in transition metal oxides.  United States: N. p., 2012. 
Web.  doi:10.1103/PhysRevB.86.195136.

Copy to clipboard


                    Wang, Xin, Han, M. J., de' Medici, Luca, Park, Hyowon, Marianetti, C. A., & Millis, Andrew J. Covalency, double-counting, and the metal-insulator phase diagram in transition metal oxides.  United States.  https://doi.org/10.1103/PhysRevB.86.195136

Copy to clipboard


                    Wang, Xin, Han, M. J., de' Medici, Luca, Park, Hyowon, Marianetti, C. A., and Millis, Andrew J. Mon .  
"Covalency, double-counting, and the metal-insulator phase diagram in transition metal oxides".  United States.  https://doi.org/10.1103/PhysRevB.86.195136.

Copy to clipboard


                    
@article{osti_1101821,

  title        = {Covalency, double-counting, and the metal-insulator phase diagram in transition metal oxides},

  author       = {Wang, Xin and Han, M. J. and de' Medici, Luca and Park, Hyowon and Marianetti, C. A. and Millis, Andrew J.},

  abstractNote = {},

  doi          = {10.1103/PhysRevB.86.195136},

  journal      = {Physical Review B},

  number       = 19,

  volume       = 86,

  place        = {United States},

  year         = {Mon Nov 26 00:00:00 EST 2012},

  month        = {Mon Nov 26 00:00:00 EST 2012}

}

Copy to clipboard

Journal Article:

Free Publicly Available Full Text

Accepted Manuscript (Publisher)

Publisher's Version of Record
https://doi.org/10.1103/PhysRevB.86.195136

Other availability

Search WorldCat to find libraries that may hold this journal

Citation Metrics:

Cited by: 51 works

Citation information provided by
Web of Science

Save / Share:

Export Metadata

Save to My Library

Similar Records in DOE PAGES and OSTI.GOV collections:

Distinctive Finite Size Effects on the Phase Diagram and Metal-insulator Transitions of Tungsten-doped Vanadium(IV) Oxide

Journal Article Whittaker, L ; Wu, T ; Patridge, C ; ... - Journal of Materials Chemistry

The influence of finite size in altering the phase stabilities of strongly correlated materials gives rise to the interesting prospect of achieving additional tunability of solid-solid phase transitions such as those involved in metal-insulator switching, ferroelectricity, and superconductivity. We note here some distinctive finite size effects on the relative phase stabilities of insulating (monoclinic) and metallic (tetragonal) phases of solid-solution W{sub x}V{sub 1-x}O{sub 2}. Ensemble differential scanning calorimetry and individual nanobelt electrical transport measurements suggest a pronounced hysteresis between metal {yields} insulator and insulator {yields} metal phase transformations. Both transitions are depressed to lower critical temperatures upon the incorporation ofmore »« less
https://doi.org/10.1039/c0jm03833d
A simple model for the superconducting phase diagram near the metal-insulator transition

Journal Article Allub, R ; Caro, A ; Wiecko, C - J. Low Temp. Phys.; (United States)

The authors solve a simple model of competing superconductivity and disorder in a mean-field approximation with two order parameters. A phase diagram showing superconducting-normal metal-insulator as well as superconducting-insulator transitions is obtained. Comparison with experiments shows a good qualitative agreement.
https://doi.org/10.1007/BF00688742
Phase diagram of Coulomb interactions across the metal-insulator transition in Si:B.

Journal Article Lee, Mark - Proposed for publication in Physical Review Letters.

Measurements of the single-particle density of states (DOS) near T=0 ?K in Si:B are used to construct an energy-density phase diagram of Coulomb interactions across the critical density n{sub c} of the metal-insulator transition. Insulators and metals are found to be distinguishable only below a phase boundary (|n/n{sub c}-1|) determined by the Coulomb energy. Above ? is a mixed state where metals and insulators equidistant from n{sub c} cannot be distinguished from their DOS structure. The data imply a diverging screening radius at n{sub c}, which may signal an interaction-driven thermodynamic state change.
https://doi.org/10.1103/PhysRevLett.93.256401
THERMODYNAMIC ANALYSIS OF DOUBLE PHASE DIAGRAMS OF YTTRIUM IN ASSOCIATION WITH TRANSITION METALS OF THE IV--VI PERIODS. (in Russian)

Journal Article Al'tovskii, R M ; Gornyi, D S ; Lyutikov, R A ; ... - pp 735-44 of Thermodynamics of Nuclear Materials, 1967. Vienna, International Atomic Energy Agency, 1968.
The band structure and the double metal-insulator-metal phase transition in the conductivity of elastically strained zero-gap Cd{sub x}Hg{sub 1-x}Te

Journal Article Venger, E F ; Gasan-zade, S. G., E-mail: gassan@isp.kiev.ua ; Strikha, M V ; ... - Semiconductors

In the zero-gap Cd{sub x}Hg{sub 1-x}Te semiconductor subjected to an axial elastic strain, a band gap is formed between the bottom of the conduction band and the top of the valence band. In the new state, the band structure is found to depend on the initial arrangement of the valence subbands, i.e., on the composition defined by the parameter x. At x < 0.135-0.140, the material becomes a semiconductor with an indirect band gap. If 0.140 < x < 160, the band of light holes at k = 0, {gamma}{sub 6}, is found to be above the {gamma}{sub 8} band.more »« less
https://doi.org/10.1134/S1063782607030049

Similar Records