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Title: Direct Observation of a Pressure-Induced Precursor Lattice in Silicon

Authors:
; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1101785
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 109; Journal Issue: 20; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Shen, Guoyin, Ikuta, Daijo, Sinogeikin, Stanislav, Li, Quan, Zhang, Yi, and Chen, Changfeng. Direct Observation of a Pressure-Induced Precursor Lattice in Silicon. United States: N. p., 2012. Web. doi:10.1103/PhysRevLett.109.205503.
Shen, Guoyin, Ikuta, Daijo, Sinogeikin, Stanislav, Li, Quan, Zhang, Yi, & Chen, Changfeng. Direct Observation of a Pressure-Induced Precursor Lattice in Silicon. United States. doi:10.1103/PhysRevLett.109.205503.
Shen, Guoyin, Ikuta, Daijo, Sinogeikin, Stanislav, Li, Quan, Zhang, Yi, and Chen, Changfeng. Fri . "Direct Observation of a Pressure-Induced Precursor Lattice in Silicon". United States. doi:10.1103/PhysRevLett.109.205503.
@article{osti_1101785,
title = {Direct Observation of a Pressure-Induced Precursor Lattice in Silicon},
author = {Shen, Guoyin and Ikuta, Daijo and Sinogeikin, Stanislav and Li, Quan and Zhang, Yi and Chen, Changfeng},
abstractNote = {},
doi = {10.1103/PhysRevLett.109.205503},
journal = {Physical Review Letters},
number = 20,
volume = 109,
place = {United States},
year = {2012},
month = {11}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevLett.109.205503

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Cited by: 17 works
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