Polarization-Driven Topological Insulator Transition in a GaN / InN / GaN Quantum Well

Miao, M. S.; Yan, Q.; Van de Walle, C. G.; Lou, W. K.; Li, L. L.; Chang, K.

doi:10.1103/PhysRevLett.109.186803

Title: Polarization-Driven Topological Insulator Transition in a $GaN / InN / GaN$ Quantum Well

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Authors:: Miao, M. S.; Yan, Q.; Van de Walle, C. G.; Lou, W. K.; Li, L. L.; Chang, K.

Publication Date:: 2012-11-02

Sponsoring Org.:: USDOE

OSTI Identifier:: 1101704

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Physical Review Letters

Additional Journal Information:: Journal Volume: 109; Journal Issue: 18; Journal ID: ISSN 0031-9007

Publisher:: American Physical Society

Country of Publication:: United States

Language:: English

Citation Formats


                    Miao, M. S., Yan, Q., Van de Walle, C. G., Lou, W. K., Li, L. L., and Chang, K. Polarization-Driven Topological Insulator Transition in a GaN / InN / GaN Quantum Well.  United States: N. p., 2012. 
Web.  doi:10.1103/PhysRevLett.109.186803.

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                    Miao, M. S., Yan, Q., Van de Walle, C. G., Lou, W. K., Li, L. L., & Chang, K. Polarization-Driven Topological Insulator Transition in a GaN / InN / GaN Quantum Well.  United States.  https://doi.org/10.1103/PhysRevLett.109.186803

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                    Miao, M. S., Yan, Q., Van de Walle, C. G., Lou, W. K., Li, L. L., and Chang, K. Fri .  
"Polarization-Driven Topological Insulator Transition in a GaN / InN / GaN Quantum Well".  United States.  https://doi.org/10.1103/PhysRevLett.109.186803.

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@article{osti_1101704,

  title        = {Polarization-Driven Topological Insulator Transition in a GaN / InN / GaN Quantum Well},

  author       = {Miao, M. S. and Yan, Q. and Van de Walle, C. G. and Lou, W. K. and Li, L. L. and Chang, K.},

  abstractNote = {},

  doi          = {10.1103/PhysRevLett.109.186803},

  journal      = {Physical Review Letters},

  number       = 18,

  volume       = 109,

  place        = {United States},

  year         = {2012},

  month        = {11}

}

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