skip to main content

DOE PAGESDOE PAGES

  • DOE PAGES
  • Publisher's Accepted Manuscript: Polarization-Driven Topological Insulator Transition in a GaN / InN / GaN Quantum Well

Title: Polarization-Driven Topological Insulator Transition in a GaN / InN / GaN Quantum Well

Authors:
; ; ; ; ;
Publication Date:
Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 109; Journal Issue: 18; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1101704
  • Citation Metrics
  • Cited by: 51 works
  • Citation information provided by
    Web of Science