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Title: Polarization-Driven Topological Insulator Transition in a GaN / InN / GaN Quantum Well

Authors:
; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1101704
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 109; Journal Issue: 18; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Miao, M. S., Yan, Q., Van de Walle, C. G., Lou, W. K., Li, L. L., and Chang, K. Polarization-Driven Topological Insulator Transition in a GaN / InN / GaN Quantum Well. United States: N. p., 2012. Web. doi:10.1103/PhysRevLett.109.186803.
Miao, M. S., Yan, Q., Van de Walle, C. G., Lou, W. K., Li, L. L., & Chang, K. Polarization-Driven Topological Insulator Transition in a GaN / InN / GaN Quantum Well. United States. doi:10.1103/PhysRevLett.109.186803.
Miao, M. S., Yan, Q., Van de Walle, C. G., Lou, W. K., Li, L. L., and Chang, K. Fri . "Polarization-Driven Topological Insulator Transition in a GaN / InN / GaN Quantum Well". United States. doi:10.1103/PhysRevLett.109.186803.
@article{osti_1101704,
title = {Polarization-Driven Topological Insulator Transition in a GaN / InN / GaN Quantum Well},
author = {Miao, M. S. and Yan, Q. and Van de Walle, C. G. and Lou, W. K. and Li, L. L. and Chang, K.},
abstractNote = {},
doi = {10.1103/PhysRevLett.109.186803},
journal = {Physical Review Letters},
number = 18,
volume = 109,
place = {United States},
year = {2012},
month = {11}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevLett.109.186803

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Cited by: 67 works
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