Polarization-Driven Topological Insulator Transition in a Quantum Well
- Authors:
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1101704
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Physical Review Letters
- Additional Journal Information:
- Journal Volume: 109; Journal Issue: 18; Journal ID: ISSN 0031-9007
- Publisher:
- American Physical Society
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Miao, M. S., Yan, Q., Van de Walle, C. G., Lou, W. K., Li, L. L., and Chang, K. Polarization-Driven Topological Insulator Transition in a GaN / InN / GaN Quantum Well. United States: N. p., 2012.
Web. doi:10.1103/PhysRevLett.109.186803.
Miao, M. S., Yan, Q., Van de Walle, C. G., Lou, W. K., Li, L. L., & Chang, K. Polarization-Driven Topological Insulator Transition in a GaN / InN / GaN Quantum Well. United States. doi:10.1103/PhysRevLett.109.186803.
Miao, M. S., Yan, Q., Van de Walle, C. G., Lou, W. K., Li, L. L., and Chang, K. Fri .
"Polarization-Driven Topological Insulator Transition in a GaN / InN / GaN Quantum Well". United States. doi:10.1103/PhysRevLett.109.186803.
@article{osti_1101704,
title = {Polarization-Driven Topological Insulator Transition in a GaN / InN / GaN Quantum Well},
author = {Miao, M. S. and Yan, Q. and Van de Walle, C. G. and Lou, W. K. and Li, L. L. and Chang, K.},
abstractNote = {},
doi = {10.1103/PhysRevLett.109.186803},
journal = {Physical Review Letters},
number = 18,
volume = 109,
place = {United States},
year = {2012},
month = {11}
}
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevLett.109.186803
DOI: 10.1103/PhysRevLett.109.186803
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