Limits to Thermal Transport in Nanoscale Metal Bilayers due to Weak Electron-Phonon Coupling in Au and Cu

Wang, Wei; Cahill, David G.

doi:10.1103/PhysRevLett.109.175503

Title: Limits to Thermal Transport in Nanoscale Metal Bilayers due to Weak Electron-Phonon Coupling in Au and Cu

Full Record
Other Related Research

Authors:: Wang, Wei; Cahill, David G.

Publication Date:: 2012-10-26

Sponsoring Org.:: USDOE

OSTI Identifier:: 1101678

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Physical Review Letters

Additional Journal Information:: Journal Volume: 109; Journal Issue: 17; Journal ID: ISSN 0031-9007

Publisher:: American Physical Society

Country of Publication:: United States

Language:: English

Citation Formats


                    Wang, Wei, and Cahill, David G. Limits to Thermal Transport in Nanoscale Metal Bilayers due to Weak Electron-Phonon Coupling in Au and Cu.  United States: N. p., 2012. 
Web.  doi:10.1103/PhysRevLett.109.175503.

Copy to clipboard


                    Wang, Wei, & Cahill, David G. Limits to Thermal Transport in Nanoscale Metal Bilayers due to Weak Electron-Phonon Coupling in Au and Cu.  United States.  https://doi.org/10.1103/PhysRevLett.109.175503

Copy to clipboard


                    Wang, Wei, and Cahill, David G. Fri .  
"Limits to Thermal Transport in Nanoscale Metal Bilayers due to Weak Electron-Phonon Coupling in Au and Cu".  United States.  https://doi.org/10.1103/PhysRevLett.109.175503.

Copy to clipboard


                    
@article{osti_1101678,

  title        = {Limits to Thermal Transport in Nanoscale Metal Bilayers due to Weak Electron-Phonon Coupling in Au and Cu},

  author       = {Wang, Wei and Cahill, David G.},

  abstractNote = {},

  doi          = {10.1103/PhysRevLett.109.175503},

  journal      = {Physical Review Letters},

  number       = 17,

  volume       = 109,

  place        = {United States},

  year         = {2012},

  month        = {10}

}

Copy to clipboard

Journal Article:

Free Publicly Available Full Text

Accepted Manuscript (Publisher)

Publisher's Version of Record
https://doi.org/10.1103/PhysRevLett.109.175503

Other availability

Search WorldCat to find libraries that may hold this journal

Citation Metrics:

Cited by: 27 works

Citation information provided by
Web of Science

Save / Share:

Export Metadata

Save to My Library

Similar Records in DOE PAGES and OSTI.GOV collections:

Thermal transport exceeding bulk heat conduction due to nonthermal micro/nanoscale phonon populations

Journal Article Chiloyan, Vazrik ; Huberman, Samuel ; Maznev, Alexei A. ; ... - Applied Physics Letters

While classical size effects usually lead to a reduced effective thermal conductivity, we report here that nonthermal phonon populations produced by a micro/nanoscale heat source can lead to enhanced heat conduction, exceeding the prediction from Fourier's law. We study nondiffusive thermal transport by phonons at small distances within the framework of the Boltzmann transport equation (BTE) and demonstrate that the transport is significantly affected by the distribution of phonons emitted by the source. We discuss analytical solutions of the steady-state BTE for a source with a sinusoidal spatial profile, as well as for a three-dimensional Gaussian “hot spot,” and providemore »« less
https://doi.org/10.1063/1.5139069

Full Text Available
Role of direct electron-phonon coupling across metal-semiconductor interfaces in thermal transport via molecular dynamics

Journal Article Lin, Keng-Hua ; Strachan, Alejandro - Journal of Chemical Physics

Motivated by significant interest in metal-semiconductor and metal-insulator interfaces and superlattices for energy conversion applications, we developed a molecular dynamics-based model that captures the thermal transport role of conduction electrons in metals and heat transport across these types of interface. Key features of our model, denoted eleDID (electronic version of dynamics with implicit degrees of freedom), are the natural description of interfaces and free surfaces and the ability to control the spatial extent of electron-phonon (e-ph) coupling. Non-local e-ph coupling enables the energy of conduction electrons to be transferred directly to the semiconductor/insulator phonons (as opposed to having to firstmore »« less
https://doi.org/10.1063/1.4922893
Transmission electron microscopy based study of epitaxy inNb/(100)Cu bilayer and Cu/Nb/(100)Cu trilayer nanoscale films

Journal Article Mitlin, D ; Schmid, A K ; Radmilovic, V - Applied Physics Letters

No abstract prepared.
https://doi.org/10.1063/1.1850195
Electron-phonon coupling and thermal transport in the thermoelectric compound Mo₃Sb_7–xTe_x

Journal Article Bansal, Dipanshu ; Li, Chen W. ; Said, Ayman H. ; ... - Physical Review. B, Condensed Matter and Materials Physics

Phonon properties of Mo₃Sb_7–xTe_x (x = 0, 1.5, 1.7), a potential high-temperature thermoelectric material, have been studied with inelastic neutron and x-ray scattering, and with first-principles simulations. The substitution of Te for Sb leads to pronounced changes in the electronic struc- ture, local bonding, phonon density of states (DOS), dispersions, and phonon lifetimes. Alloying with tellurium shifts the Fermi level upward, near the top of the valence band, resulting in a strong suppression of electron-phonon screening, and a large overall stiffening of interatomic force- constants. The suppression in electron-phonon coupling concomitantly increases group velocities and suppresses phonon scattering rates, surpassingmore »« less
Cited by 6
https://doi.org/10.1103/PhysRevB.92.214301

Full Text Available
Electron-phonon coupling and thermal conductance at a metal-semiconductor interface: First-principles analysis

Journal Article Sadasivam, Sridhar ; Fisher, Timothy S., E-mail: tsfisher@purdue.edu ; Waghmare, Umesh V. - Journal of Applied Physics

The mechanism of heat transfer and the contribution of electron-phonon coupling to thermal conductance of a metal-semiconductor interface remains unclear in the present literature. We report ab initio simulations of a technologically important titanium silicide (metal)–silicon (semiconductor) interface to estimate the Schottky barrier height, and the strength of electron-phonon and phonon-phonon heat transfer across the interface. The electron and phonon dispersion relations of TiSi{sub 2} with C49 structure and the TiSi{sub 2}-Si interface are obtained using first-principles calculations within the density functional theory framework. These are used to estimate electron-phonon linewidths and the associated Eliashberg function that quantifies coupling. Wemore »« less
https://doi.org/10.1063/1.4916729

Similar Records