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Title: Reconfiguration and dissociation of bonded hydrogen in silicon by energetic ions

Authors:
; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1101457
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 83; Journal Issue: 4; Journal ID: ISSN 1098-0121
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Nageswara Rao, S. V. S., Dixit, S. K., Lüpke, G., Tolk, N. H., and Feldman, L. C. Reconfiguration and dissociation of bonded hydrogen in silicon by energetic ions. United States: N. p., 2011. Web. doi:10.1103/PhysRevB.83.045204.
Nageswara Rao, S. V. S., Dixit, S. K., Lüpke, G., Tolk, N. H., & Feldman, L. C. Reconfiguration and dissociation of bonded hydrogen in silicon by energetic ions. United States. doi:10.1103/PhysRevB.83.045204.
Nageswara Rao, S. V. S., Dixit, S. K., Lüpke, G., Tolk, N. H., and Feldman, L. C. Fri . "Reconfiguration and dissociation of bonded hydrogen in silicon by energetic ions". United States. doi:10.1103/PhysRevB.83.045204.
@article{osti_1101457,
title = {Reconfiguration and dissociation of bonded hydrogen in silicon by energetic ions},
author = {Nageswara Rao, S. V. S. and Dixit, S. K. and Lüpke, G. and Tolk, N. H. and Feldman, L. C.},
abstractNote = {},
doi = {10.1103/PhysRevB.83.045204},
journal = {Physical Review B},
number = 4,
volume = 83,
place = {United States},
year = {2011},
month = {1}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevB.83.045204

Citation Metrics:
Cited by: 2 works
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