Correlation between morphology, chemical environment, and ferromagnetism in the intrinsic-vacancy dilute magnetic semiconductor Cr-doped Ga 2 Se 3 /Si(001)

Yitamben, E. N.; Lovejoy, T. C.; Pakhomov, A. B.; Heald, S. M.; Negusse, E.; Arena, D.; Ohuchi, F. S.; Olmstead, M. A.

doi:10.1103/PhysRevB.83.045203

Title: Correlation between morphology, chemical environment, and ferromagnetism in the intrinsic-vacancy dilute magnetic semiconductor Cr-doped Ga $_{2}$ Se $_{3}$ /Si(001)

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Authors:: Yitamben, E. N.; Lovejoy, T. C.; Pakhomov, A. B.; Heald, S. M.; Negusse, E.; Arena, D.; Ohuchi, F. S.; Olmstead, M. A.

Publication Date:: Fri Jan 28 00:00:00 EST 2011

Sponsoring Org.:: USDOE

OSTI Identifier:: 1101456

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Physical Review B

Additional Journal Information:: Journal Volume: 83; Journal Issue: 4; Journal ID: ISSN 1098-0121

Publisher:: American Physical Society

Country of Publication:: United States

Language:: English

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                    Yitamben, E. N., Lovejoy, T. C., Pakhomov, A. B., Heald, S. M., Negusse, E., Arena, D., Ohuchi, F. S., and Olmstead, M. A. Correlation between morphology, chemical environment, and ferromagnetism in the intrinsic-vacancy dilute magnetic semiconductor Cr-doped Ga 2 Se 3 /Si(001).  United States: N. p., 2011. 
Web.  doi:10.1103/PhysRevB.83.045203.

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                    Yitamben, E. N., Lovejoy, T. C., Pakhomov, A. B., Heald, S. M., Negusse, E., Arena, D., Ohuchi, F. S., & Olmstead, M. A. Correlation between morphology, chemical environment, and ferromagnetism in the intrinsic-vacancy dilute magnetic semiconductor Cr-doped Ga 2 Se 3 /Si(001).  United States.  https://doi.org/10.1103/PhysRevB.83.045203

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                    Yitamben, E. N., Lovejoy, T. C., Pakhomov, A. B., Heald, S. M., Negusse, E., Arena, D., Ohuchi, F. S., and Olmstead, M. A. Fri .  
"Correlation between morphology, chemical environment, and ferromagnetism in the intrinsic-vacancy dilute magnetic semiconductor Cr-doped Ga 2 Se 3 /Si(001)".  United States.  https://doi.org/10.1103/PhysRevB.83.045203.

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@article{osti_1101456,

  title        = {Correlation between morphology, chemical environment, and ferromagnetism in the intrinsic-vacancy dilute magnetic semiconductor Cr-doped Ga 2 Se 3 /Si(001)},

  author       = {Yitamben, E. N. and Lovejoy, T. C. and Pakhomov, A. B. and Heald, S. M. and Negusse, E. and Arena, D. and Ohuchi, F. S. and Olmstead, M. A.},

  abstractNote = {},

  doi          = {10.1103/PhysRevB.83.045203},

  journal      = {Physical Review B},

  number       = 4,

  volume       = 83,

  place        = {United States},

  year         = {Fri Jan 28 00:00:00 EST 2011},

  month        = {Fri Jan 28 00:00:00 EST 2011}

}

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Title: Correlation between morphology, chemical environment, and ferromagnetism in the intrinsic-vacancy dilute magnetic semiconductor Cr-doped Ga 2 Se 3 /Si(001)

Citation Formats

Title: Correlation between morphology, chemical environment, and ferromagnetism in the intrinsic-vacancy dilute magnetic semiconductor Cr-doped Ga $_{2}$ Se $_{3}$ /Si(001)