Three-Dimensional Topological Insulators in and Chalcopyrite Semiconductors
- Authors:
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1101341
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Physical Review Letters
- Additional Journal Information:
- Journal Volume: 106; Journal Issue: 1; Journal ID: ISSN 0031-9007
- Publisher:
- American Physical Society
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Feng, Wanxiang, Xiao, Di, Ding, Jun, and Yao, Yugui. Three-Dimensional Topological Insulators in I − III − VI 2 and II − IV − V 2 Chalcopyrite Semiconductors. United States: N. p., 2011.
Web. doi:10.1103/PhysRevLett.106.016402.
Feng, Wanxiang, Xiao, Di, Ding, Jun, & Yao, Yugui. Three-Dimensional Topological Insulators in I − III − VI 2 and II − IV − V 2 Chalcopyrite Semiconductors. United States. https://doi.org/10.1103/PhysRevLett.106.016402
Feng, Wanxiang, Xiao, Di, Ding, Jun, and Yao, Yugui. Wed .
"Three-Dimensional Topological Insulators in I − III − VI 2 and II − IV − V 2 Chalcopyrite Semiconductors". United States. https://doi.org/10.1103/PhysRevLett.106.016402.
@article{osti_1101341,
title = {Three-Dimensional Topological Insulators in I − III − VI 2 and II − IV − V 2 Chalcopyrite Semiconductors},
author = {Feng, Wanxiang and Xiao, Di and Ding, Jun and Yao, Yugui},
abstractNote = {},
doi = {10.1103/PhysRevLett.106.016402},
journal = {Physical Review Letters},
number = 1,
volume = 106,
place = {United States},
year = {Wed Jan 05 00:00:00 EST 2011},
month = {Wed Jan 05 00:00:00 EST 2011}
}
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1103/PhysRevLett.106.016402
https://doi.org/10.1103/PhysRevLett.106.016402
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Cited by: 126 works
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