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Title: Three-Dimensional Topological Insulators in I III VI 2 and II IV V 2 Chalcopyrite Semiconductors

Authors:
; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1101341
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 106; Journal Issue: 1; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Feng, Wanxiang, Xiao, Di, Ding, Jun, and Yao, Yugui. Three-Dimensional Topological Insulators in I − III − VI 2 and II − IV − V 2 Chalcopyrite Semiconductors. United States: N. p., 2011. Web. doi:10.1103/PhysRevLett.106.016402.
Feng, Wanxiang, Xiao, Di, Ding, Jun, & Yao, Yugui. Three-Dimensional Topological Insulators in I − III − VI 2 and II − IV − V 2 Chalcopyrite Semiconductors. United States. doi:10.1103/PhysRevLett.106.016402.
Feng, Wanxiang, Xiao, Di, Ding, Jun, and Yao, Yugui. Wed . "Three-Dimensional Topological Insulators in I − III − VI 2 and II − IV − V 2 Chalcopyrite Semiconductors". United States. doi:10.1103/PhysRevLett.106.016402.
@article{osti_1101341,
title = {Three-Dimensional Topological Insulators in I − III − VI 2 and II − IV − V 2 Chalcopyrite Semiconductors},
author = {Feng, Wanxiang and Xiao, Di and Ding, Jun and Yao, Yugui},
abstractNote = {},
doi = {10.1103/PhysRevLett.106.016402},
journal = {Physical Review Letters},
number = 1,
volume = 106,
place = {United States},
year = {2011},
month = {1}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevLett.106.016402

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Cited by: 91 works
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