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Title: Si diffusion path for pit-free graphene growth on SiC(0001)

Authors:
; ; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1101227
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 84; Journal Issue: 19; Journal ID: ISSN 1098-0121
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Sun, G. F., Liu, Y., Rhim, S. H., Jia, J. F., Xue, Q. K., Weinert, M., and Li, L. Si diffusion path for pit-free graphene growth on SiC(0001). United States: N. p., 2011. Web. doi:10.1103/PhysRevB.84.195455.
Sun, G. F., Liu, Y., Rhim, S. H., Jia, J. F., Xue, Q. K., Weinert, M., & Li, L. Si diffusion path for pit-free graphene growth on SiC(0001). United States. doi:10.1103/PhysRevB.84.195455.
Sun, G. F., Liu, Y., Rhim, S. H., Jia, J. F., Xue, Q. K., Weinert, M., and Li, L. Wed . "Si diffusion path for pit-free graphene growth on SiC(0001)". United States. doi:10.1103/PhysRevB.84.195455.
@article{osti_1101227,
title = {Si diffusion path for pit-free graphene growth on SiC(0001)},
author = {Sun, G. F. and Liu, Y. and Rhim, S. H. and Jia, J. F. and Xue, Q. K. and Weinert, M. and Li, L.},
abstractNote = {},
doi = {10.1103/PhysRevB.84.195455},
journal = {Physical Review B},
number = 19,
volume = 84,
place = {United States},
year = {2011},
month = {11}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevB.84.195455

Citation Metrics:
Cited by: 24 works
Citation information provided by
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