Si diffusion path for pit-free graphene growth on SiC(0001)
- Authors:
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1101227
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Physical Review B
- Additional Journal Information:
- Journal Volume: 84; Journal Issue: 19; Journal ID: ISSN 1098-0121
- Publisher:
- American Physical Society
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Sun, G. F., Liu, Y., Rhim, S. H., Jia, J. F., Xue, Q. K., Weinert, M., and Li, L. Si diffusion path for pit-free graphene growth on SiC(0001). United States: N. p., 2011.
Web. doi:10.1103/PhysRevB.84.195455.
Sun, G. F., Liu, Y., Rhim, S. H., Jia, J. F., Xue, Q. K., Weinert, M., & Li, L. Si diffusion path for pit-free graphene growth on SiC(0001). United States. https://doi.org/10.1103/PhysRevB.84.195455
Sun, G. F., Liu, Y., Rhim, S. H., Jia, J. F., Xue, Q. K., Weinert, M., and Li, L. Wed .
"Si diffusion path for pit-free graphene growth on SiC(0001)". United States. https://doi.org/10.1103/PhysRevB.84.195455.
@article{osti_1101227,
title = {Si diffusion path for pit-free graphene growth on SiC(0001)},
author = {Sun, G. F. and Liu, Y. and Rhim, S. H. and Jia, J. F. and Xue, Q. K. and Weinert, M. and Li, L.},
abstractNote = {},
doi = {10.1103/PhysRevB.84.195455},
journal = {Physical Review B},
number = 19,
volume = 84,
place = {United States},
year = {Wed Nov 23 00:00:00 EST 2011},
month = {Wed Nov 23 00:00:00 EST 2011}
}
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1103/PhysRevB.84.195455
https://doi.org/10.1103/PhysRevB.84.195455
Other availability
Cited by: 32 works
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