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Title: Engineering quantum anomalous/valley Hall states in graphene via metal-atom adsorption: An ab-initio study

Authors:
; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1101181
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 84; Journal Issue: 19; Journal ID: ISSN 1098-0121
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Ding, Jun, Qiao, Zhenhua, Feng, Wanxiang, Yao, Yugui, and Niu, Qian. Engineering quantum anomalous/valley Hall states in graphene via metal-atom adsorption: An ab-initio study. United States: N. p., 2011. Web. doi:10.1103/PhysRevB.84.195444.
Ding, Jun, Qiao, Zhenhua, Feng, Wanxiang, Yao, Yugui, & Niu, Qian. Engineering quantum anomalous/valley Hall states in graphene via metal-atom adsorption: An ab-initio study. United States. doi:10.1103/PhysRevB.84.195444.
Ding, Jun, Qiao, Zhenhua, Feng, Wanxiang, Yao, Yugui, and Niu, Qian. Tue . "Engineering quantum anomalous/valley Hall states in graphene via metal-atom adsorption: An ab-initio study". United States. doi:10.1103/PhysRevB.84.195444.
@article{osti_1101181,
title = {Engineering quantum anomalous/valley Hall states in graphene via metal-atom adsorption: An ab-initio study},
author = {Ding, Jun and Qiao, Zhenhua and Feng, Wanxiang and Yao, Yugui and Niu, Qian},
abstractNote = {},
doi = {10.1103/PhysRevB.84.195444},
journal = {Physical Review B},
number = 19,
volume = 84,
place = {United States},
year = {2011},
month = {11}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevB.84.195444

Citation Metrics:
Cited by: 129 works
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