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Title: Compensation-doped silicon for photovoltaic applications

Authors:
; ;
Publication Date:
Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 84; Journal Issue: 19; Journal ID: ISSN 1098-0121
Publisher:
American Physical Society
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1101095

Samsonidze, Georgy, Cohen, Marvin L., and Louie, Steven G.. Compensation-doped silicon for photovoltaic applications. United States: N. p., Web. doi:10.1103/PhysRevB.84.195201.
Samsonidze, Georgy, Cohen, Marvin L., & Louie, Steven G.. Compensation-doped silicon for photovoltaic applications. United States. doi:10.1103/PhysRevB.84.195201.
Samsonidze, Georgy, Cohen, Marvin L., and Louie, Steven G.. 2011. "Compensation-doped silicon for photovoltaic applications". United States. doi:10.1103/PhysRevB.84.195201.
@article{osti_1101095,
title = {Compensation-doped silicon for photovoltaic applications},
author = {Samsonidze, Georgy and Cohen, Marvin L. and Louie, Steven G.},
abstractNote = {},
doi = {10.1103/PhysRevB.84.195201},
journal = {Physical Review B},
number = 19,
volume = 84,
place = {United States},
year = {2011},
month = {11}
}