Comparative study of the luminescence and intrinsic point defects in the kesterite Cu2ZnSnS4 and chalcopyrite Cu(In,Ga)Se2 thin films used in photovoltaic applications

Romero, Manuel J.; Du, Hui; Teeter, Glenn; Yan, Yanfa; Al-Jassim, Mowafak M.

doi:10.1103/PhysRevB.84.165324

Title: Comparative study of the luminescence and intrinsic point defects in the kesterite Cu₂ZnSnS₄ and chalcopyrite Cu(In,Ga)Se₂ thin films used in photovoltaic applications

Authors:: Romero, Manuel J.; Du, Hui; Teeter, Glenn; Yan, Yanfa; Al-Jassim, Mowafak M.

Publication Date:: Mon Oct 24 00:00:00 EDT 2011

Sponsoring Org.:: USDOE

OSTI Identifier:: 1101024

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Physical Review. B, Condensed Matter and Materials Physics

Additional Journal Information:: Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Volume: 84 Journal Issue: 16; Journal ID: ISSN 1098-0121

Publisher:: American Physical Society

Country of Publication:: United States

Language:: English

Citation Formats


                    Romero, Manuel J., Du, Hui, Teeter, Glenn, Yan, Yanfa, and Al-Jassim, Mowafak M. Comparative study of the luminescence and intrinsic point defects in the kesterite Cu2ZnSnS4 and chalcopyrite Cu(In,Ga)Se2 thin films used in photovoltaic applications.  United States: N. p., 2011. 
Web.  doi:10.1103/PhysRevB.84.165324.

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                    Romero, Manuel J., Du, Hui, Teeter, Glenn, Yan, Yanfa, & Al-Jassim, Mowafak M. Comparative study of the luminescence and intrinsic point defects in the kesterite Cu2ZnSnS4 and chalcopyrite Cu(In,Ga)Se2 thin films used in photovoltaic applications.  United States.  https://doi.org/10.1103/PhysRevB.84.165324

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                    Romero, Manuel J., Du, Hui, Teeter, Glenn, Yan, Yanfa, and Al-Jassim, Mowafak M. Mon .  
"Comparative study of the luminescence and intrinsic point defects in the kesterite Cu2ZnSnS4 and chalcopyrite Cu(In,Ga)Se2 thin films used in photovoltaic applications".  United States.  https://doi.org/10.1103/PhysRevB.84.165324.

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@article{osti_1101024,

  title        = {Comparative study of the luminescence and intrinsic point defects in the kesterite Cu2ZnSnS4 and chalcopyrite Cu(In,Ga)Se2 thin films used in photovoltaic applications},

  author       = {Romero, Manuel J. and Du, Hui and Teeter, Glenn and Yan, Yanfa and Al-Jassim, Mowafak M.},

  abstractNote = {},

  doi          = {10.1103/PhysRevB.84.165324},

  journal      = {Physical Review. B, Condensed Matter and Materials Physics},

  number       = 16,

  volume       = 84,

  place        = {United States},

  year         = {Mon Oct 24 00:00:00 EDT 2011},

  month        = {Mon Oct 24 00:00:00 EDT 2011}

}

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Title: Comparative study of the luminescence and intrinsic point defects in the kesterite Cu2ZnSnS4 and chalcopyrite Cu(In,Ga)Se2 thin films used in photovoltaic applications

Citation Formats

Electrically Benign Behavior of Grain Boundaries in Polycrystalline CuInSe 2 Films journal, December 2007

First-principles calculation of defect formation energy in chalcopyrite-type CuInSe2, CuGaSe2 and CuAlSe2 journal, November 2005

Materials availability for large-scale thin-film photovoltaics journal, January 2000

Defect physics of the CuInSe 2 chalcopyrite semiconductor journal, April 1998

Stabilization of Ternary Compounds via Ordered Arrays of Defect Pairs journal, May 1997

Cathodoluminescence of Cu(In,Ga)Se2 thin films used in high-efficiency solar cells journal, December 2003

Electronic Properties of Doped Semiconductors book, January 1984

Thermally evaporated Cu2ZnSnS4 solar cells journal, October 2010

Local built-in potential on grain boundary of Cu(In,Ga)Se2 thin films journal, May 2004

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Characterization of CuIn(Ga)Se2 Thin Films journal, July 1998

Anomalous Grain Boundary Physics in Polycrystalline C u I n S e 2 : The Existence of a Hole Barrier journal, December 2003

The Role of Spatial Potential Fluctuations in the Shape of the PL Bands of Multinary Semiconductor Compounds journal, January 1999

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Excitonic luminescence of Cu(In,Ga)Se2 journal, June 2005

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Contents: (Adv. Mater. 8/2010) journal, February 2010

Large Neutral Barrier at Grain Boundaries in Chalcopyrite Thin Films journal, May 2010

Intrinsic point defects and complexes in the quaternary kesterite semiconductor Cu 2 ZnSnS 4 journal, June 2010

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Title: Comparative study of the luminescence and intrinsic point defects in the kesterite Cu₂ZnSnS₄ and chalcopyrite Cu(In,Ga)Se₂ thin films used in photovoltaic applications

Electrically Benign Behavior of Grain Boundaries in Polycrystalline ${CuInSe}_{2}$ Films
journal, December 2007

First-principles calculation of defect formation energy in chalcopyrite-type CuInSe2, CuGaSe2 and CuAlSe2
journal, November 2005

Materials availability for large-scale thin-film photovoltaics
journal, January 2000

Defect physics of the ${CuInSe}_{2}$ chalcopyrite semiconductor
journal, April 1998

Stabilization of Ternary Compounds via Ordered Arrays of Defect Pairs
journal, May 1997

Cathodoluminescence of Cu(In,Ga)Se2 thin films used in high-efficiency solar cells
journal, December 2003

Electronic Properties of Doped Semiconductors
book, January 1984

Thermally evaporated Cu2ZnSnS4 solar cells
journal, October 2010

Local built-in potential on grain boundary of Cu(In,Ga)Se2 thin films
journal, May 2004

New world record efficiency for Cu(In,Ga)Se2 thin-film solar cells beyond 20%
journal, January 2011

Characterization of CuIn(Ga)Se2 Thin Films
journal, July 1998

Anomalous Grain Boundary Physics in Polycrystalline ${C u I n S e}_{2}$ : The Existence of a Hole Barrier
journal, December 2003

The Role of Spatial Potential Fluctuations in the Shape of the PL Bands of Multinary Semiconductor Compounds
journal, January 1999

The electronic consequences of multivalent elements in inorganic solar absorbers: Multivalency of Sn in Cu2ZnSnS4
journal, May 2010

Excitonic luminescence of Cu(In,Ga)Se2
journal, June 2005

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journal, November 2005

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journal, February 2010

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