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Title: Lattice relaxation of dimer islands on Ge(001) during homoepitaxy by pulsed laser deposition

Authors:
; ; ;
Publication Date:
Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 84; Journal Issue: 16; Journal ID: ISSN 1098-0121
Publisher:
American Physical Society
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1100886

Zhou, Lan, Wang, Yiping, Li, Minghao, and Headrick, Randall L. Lattice relaxation of dimer islands on Ge(001) during homoepitaxy by pulsed laser deposition. United States: N. p., Web. doi:10.1103/PhysRevB.84.165301.
Zhou, Lan, Wang, Yiping, Li, Minghao, & Headrick, Randall L. Lattice relaxation of dimer islands on Ge(001) during homoepitaxy by pulsed laser deposition. United States. doi:10.1103/PhysRevB.84.165301.
Zhou, Lan, Wang, Yiping, Li, Minghao, and Headrick, Randall L. 2011. "Lattice relaxation of dimer islands on Ge(001) during homoepitaxy by pulsed laser deposition". United States. doi:10.1103/PhysRevB.84.165301.
@article{osti_1100886,
title = {Lattice relaxation of dimer islands on Ge(001) during homoepitaxy by pulsed laser deposition},
author = {Zhou, Lan and Wang, Yiping and Li, Minghao and Headrick, Randall L.},
abstractNote = {},
doi = {10.1103/PhysRevB.84.165301},
journal = {Physical Review B},
number = 16,
volume = 84,
place = {United States},
year = {2011},
month = {10}
}