Lattice relaxation of dimer islands on Ge(001) during homoepitaxy by pulsed laser deposition

Zhou, Lan; Wang, Yiping; Li, Minghao; Headrick, Randall L.

doi:10.1103/PhysRevB.84.165301

Title: Lattice relaxation of dimer islands on Ge(001) during homoepitaxy by pulsed laser deposition

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Authors:: Zhou, Lan; Wang, Yiping; Li, Minghao; Headrick, Randall L.

Publication Date:: Mon Oct 03 00:00:00 EDT 2011

Sponsoring Org.:: USDOE

OSTI Identifier:: 1100886

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Physical Review B

Additional Journal Information:: Journal Volume: 84; Journal Issue: 16; Journal ID: ISSN 1098-0121

Publisher:: American Physical Society

Country of Publication:: United States

Language:: English

Citation Formats


                    Zhou, Lan, Wang, Yiping, Li, Minghao, and Headrick, Randall L. Lattice relaxation of dimer islands on Ge(001) during homoepitaxy by pulsed laser deposition.  United States: N. p., 2011. 
Web.  doi:10.1103/PhysRevB.84.165301.

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                    Zhou, Lan, Wang, Yiping, Li, Minghao, & Headrick, Randall L. Lattice relaxation of dimer islands on Ge(001) during homoepitaxy by pulsed laser deposition.  United States.  https://doi.org/10.1103/PhysRevB.84.165301

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                    Zhou, Lan, Wang, Yiping, Li, Minghao, and Headrick, Randall L. Mon .  
"Lattice relaxation of dimer islands on Ge(001) during homoepitaxy by pulsed laser deposition".  United States.  https://doi.org/10.1103/PhysRevB.84.165301.

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@article{osti_1100886,

  title        = {Lattice relaxation of dimer islands on Ge(001) during homoepitaxy by pulsed laser deposition},

  author       = {Zhou, Lan and Wang, Yiping and Li, Minghao and Headrick, Randall L.},

  abstractNote = {},

  doi          = {10.1103/PhysRevB.84.165301},

  journal      = {Physical Review B},

  number       = 16,

  volume       = 84,

  place        = {United States},

  year         = {Mon Oct 03 00:00:00 EDT 2011},

  month        = {Mon Oct 03 00:00:00 EDT 2011}

}

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