Effect of oxygen gas pressure on the kinetics of alumina film growth during the oxidation of Al(111) at room temperature

Cai, Na; Zhou, Guangwen; Müller, Kathrin; Starr, David E.

doi:10.1103/PhysRevB.84.125445

Title: Effect of oxygen gas pressure on the kinetics of alumina film growth during the oxidation of Al(111) at room temperature

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Authors:: Cai, Na; Zhou, Guangwen; Müller, Kathrin; Starr, David E.

Publication Date:: Thu Sep 29 00:00:00 EDT 2011

Sponsoring Org.:: USDOE

OSTI Identifier:: 1100862

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Physical Review B

Additional Journal Information:: Journal Volume: 84; Journal Issue: 12; Journal ID: ISSN 1098-0121

Publisher:: American Physical Society

Country of Publication:: United States

Language:: English

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                    Cai, Na, Zhou, Guangwen, Müller, Kathrin, and Starr, David E. Effect of oxygen gas pressure on the kinetics of alumina film growth during the oxidation of Al(111) at room temperature.  United States: N. p., 2011. 
Web.  doi:10.1103/PhysRevB.84.125445.

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                    Cai, Na, Zhou, Guangwen, Müller, Kathrin, & Starr, David E. Effect of oxygen gas pressure on the kinetics of alumina film growth during the oxidation of Al(111) at room temperature.  United States.  https://doi.org/10.1103/PhysRevB.84.125445

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                    Cai, Na, Zhou, Guangwen, Müller, Kathrin, and Starr, David E. Thu .  
"Effect of oxygen gas pressure on the kinetics of alumina film growth during the oxidation of Al(111) at room temperature".  United States.  https://doi.org/10.1103/PhysRevB.84.125445.

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@article{osti_1100862,

  title        = {Effect of oxygen gas pressure on the kinetics of alumina film growth during the oxidation of Al(111) at room temperature},

  author       = {Cai, Na and Zhou, Guangwen and Müller, Kathrin and Starr, David E.},

  abstractNote = {},

  doi          = {10.1103/PhysRevB.84.125445},

  journal      = {Physical Review B},

  number       = 12,

  volume       = 84,

  place        = {United States},

  year         = {Thu Sep 29 00:00:00 EDT 2011},

  month        = {Thu Sep 29 00:00:00 EDT 2011}

}

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Effect of oxygen gas pressure on the kinetics of alumina film growth during the oxidation of Al(111) at room temperature

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We have studied the effect of oxygen pressure on the self-limiting oxidation of an Al(111) surface at room temperature for oxygen pressures from 1 x 10{sup -8} to 5 Torr. Using x-ray photoelectron spectroscopy measurements, we monitor the oxidation kinetics and the oxide film thickness for different oxidation times and pressures. After a rapid initial growth stage, the oxide film reaches a saturated thickness, which depends on the oxygen pressure. The kinetic potential, oxide growth rate, oxide film limiting thickness, and the density of oxygen anions on the oxide surface are determined by the measured oxidation kinetics. These quantities showmore »« less
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