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Title: Heat transport in silicon from first-principles calculations

Authors:
; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1100619
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 84; Journal Issue: 8; Journal ID: ISSN 1098-0121
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Esfarjani, Keivan, Chen, Gang, and Stokes, Harold T. Heat transport in silicon from first-principles calculations. United States: N. p., 2011. Web. doi:10.1103/PhysRevB.84.085204.
Esfarjani, Keivan, Chen, Gang, & Stokes, Harold T. Heat transport in silicon from first-principles calculations. United States. doi:10.1103/PhysRevB.84.085204.
Esfarjani, Keivan, Chen, Gang, and Stokes, Harold T. Tue . "Heat transport in silicon from first-principles calculations". United States. doi:10.1103/PhysRevB.84.085204.
@article{osti_1100619,
title = {Heat transport in silicon from first-principles calculations},
author = {Esfarjani, Keivan and Chen, Gang and Stokes, Harold T.},
abstractNote = {},
doi = {10.1103/PhysRevB.84.085204},
journal = {Physical Review B},
number = 8,
volume = 84,
place = {United States},
year = {2011},
month = {8}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevB.84.085204

Citation Metrics:
Cited by: 297 works
Citation information provided by
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