Thermoelectric and thermal transport in bilayer graphene systems

Ma, R.; Zhu, L.; Sheng, L.; Liu, M.; Sheng, D. N.

doi:10.1103/PhysRevB.84.075420

Title: Thermoelectric and thermal transport in bilayer graphene systems

Full Record
Other Related Research

Authors:: Ma, R.; Zhu, L.; Sheng, L.; Liu, M.; Sheng, D. N.

Publication Date:: Fri Aug 05 00:00:00 EDT 2011

Sponsoring Org.:: USDOE

OSTI Identifier:: 1100484

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Physical Review B

Additional Journal Information:: Journal Volume: 84; Journal Issue: 7; Journal ID: ISSN 1098-0121

Publisher:: American Physical Society

Country of Publication:: United States

Language:: English

Citation Formats


                    Ma, R., Zhu, L., Sheng, L., Liu, M., and Sheng, D. N. Thermoelectric and thermal transport in bilayer graphene systems.  United States: N. p., 2011. 
Web.  doi:10.1103/PhysRevB.84.075420.

Copy to clipboard


                    Ma, R., Zhu, L., Sheng, L., Liu, M., & Sheng, D. N. Thermoelectric and thermal transport in bilayer graphene systems.  United States.  https://doi.org/10.1103/PhysRevB.84.075420

Copy to clipboard


                    Ma, R., Zhu, L., Sheng, L., Liu, M., and Sheng, D. N. Fri .  
"Thermoelectric and thermal transport in bilayer graphene systems".  United States.  https://doi.org/10.1103/PhysRevB.84.075420.

Copy to clipboard


                    
@article{osti_1100484,

  title        = {Thermoelectric and thermal transport in bilayer graphene systems},

  author       = {Ma, R. and Zhu, L. and Sheng, L. and Liu, M. and Sheng, D. N.},

  abstractNote = {},

  doi          = {10.1103/PhysRevB.84.075420},

  journal      = {Physical Review B},

  number       = 7,

  volume       = 84,

  place        = {United States},

  year         = {Fri Aug 05 00:00:00 EDT 2011},

  month        = {Fri Aug 05 00:00:00 EDT 2011}

}

Copy to clipboard

Journal Article:

Free Publicly Available Full Text

Accepted Manuscript (Publisher)

Publisher's Version of Record
https://doi.org/10.1103/PhysRevB.84.075420

Other availability

Search WorldCat to find libraries that may hold this journal

Citation Metrics:

Cited by: 21 works

Citation information provided by
Web of Science

Save / Share:

Export Metadata

Save to My Library

Similar Records in DOE PAGES and OSTI.GOV collections:

Longitudinal Magnetic Field Effects on Thermal Transport of Doped Bilayer Graphene

Journal Article Rezania, H., E-mail: rezania.hamed@gmail.com ; Abdi, M. - Journal of Superconductivity and Novel Magnetism

We address thermal conductivity of doped biased bilayer graphene for AA-stacking in the context of tight binding model hamiltonian. The effect of magnetic field as its direction is along perpendicular to graphene plane on thermal conductivity has been investigated. Green’s function approach has been implemented to find the behavior of thermal conductivity of bilayer graphene within linear response theory. We have found the chemical potential dependence of thermal conductivity for different values of magnetic field and bias voltage. Also a peak in the dependence of thermal conductivity on magnetic field has been observed. Moreover, in the absence of magnetic field,more »« less
https://doi.org/10.1007/S10948-018-4675-Y
Controlling dynamical thermal transport of biased bilayer graphene by impurity atoms

Journal Article Rezania, Hamed ; Yarmohammadi, Mohsen - AIP Advances

We address the dynamical thermal conductivity of biased bilayer graphene doped with acceptor impurity atoms for AA-stacking in the context of tight binding model Hamiltonian. The effect of scattering by dilute charged impurities is discussed in terms of the self-consistent Born approximation. Green’s function approach has been exploited to find the behavior of thermal conductivity of bilayer graphene within the linear response theory. We have found the frequency dependence of thermal conductivity for different values of concentration and scattering strength of dopant impurity. Also the dependence of thermal conductivity on the impurity concentration and bias voltage has been investigated inmore » details.« less
https://doi.org/10.1063/1.4960378
Preparation and electrical transport properties of quasi free standing bilayer graphene on SiC (0001) substrate by H intercalation

Journal Article Yu, Cui ; Liu, Qingbin ; Li, Jia ; ... - Applied Physics Letters

We investigate the temperature dependent electrical transport properties of quasi-free standing bilayer graphene on 4H-SiC (0001) substrate. Three groups of monolayer epitaxial graphene and corresponding quasi-free standing bilayer graphene with different crystal quality and layer number homogeneity are prepared. Raman spectroscopy and atomic-force microscopy are used to obtain their morphologies and layer number, and verify the complete translation of buffer layer into graphene. The highest room temperature mobility reaches 3700 cm{sup 2}/V·s for the quasi-free standing graphene. The scattering mechanism analysis shows that poor crystal quality and layer number inhomogeneity introduce stronger interacting of SiC substrate to the graphene layer andmore »« less
https://doi.org/10.1063/1.4901163
Spin Transport Investigations in Bilayer Graphene

Journal Article Singh, Manisha ; Choudhary, Sudhanshu - Journal of Superconductivity and Novel Magnetism

We study the spin-based electron transport properties in bilayer graphene with half-metallic ferromagnetic (HMF) CrO{sub 2} electrodes. Out-of-plane bilayer graphene has been examined in this paper. A high magneto-resistance ratio (MR) of ∼99% is obtained in the bilayer structure for a potential range of 0 to 0.8 V, after which MR drops because of the increase in spin-up current in the anti-parallel configuration at 1.2 V. High spin filtration of ∼100% is obtained at all bias points. Transmission spectrum studies show that a large number of electronic states are present at the Fermi level in bilayer graphene, which would resultmore » in high current.« less
https://doi.org/10.1007/S10948-017-4165-7
Asymmetric Electron Transport at Monolayer-Bilayer Heterojunctions of Epitaxial Graphene

Journal Article Li, An-Ping ; Clark, Kendal W ; Zhang, Xiaoguang ; ... - Physical Review X

The symmetry of the graphene honeycomb lattice is a key element determining many of graphene s unique electronic properties, such as the linear energy-momentum dispersion and the suppressed backscattering 1,2. However, line defects in large-scale epitaxial graphene films, such as grain boundaries, edges, surface steps, and changes in layer thickness, often break the sublatttice symmetry and can impact transport properties of graphene profoundly 3-6. Here we report asymmetric electron transport upon polarity reversal at individual monolayer-bilayer (ML-BL) boundaries in epitaxial graphene on SiC (0001), revealed by scanning tunneling potentiometry. A greater voltage drop is observed when the current flows frommore »« less

Similar Records