Electronic versus Lattice Match for Metal-Semiconductor Epitaxial Growth: Pb on Ge(111)
- Authors:
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1100461
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Physical Review Letters
- Additional Journal Information:
- Journal Name: Physical Review Letters Journal Volume: 107 Journal Issue: 6; Journal ID: ISSN 0031-9007
- Publisher:
- American Physical Society
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Tang, S. -J., Lee, Chang-Yeh, Huang, Chien-Chung, Chang, Tay-Rong, Cheng, Cheng-Maw, Tsuei, Ku-Ding, Jeng, H. -T., Yeh, V., and Chiang, Tai-Chang. Electronic versus Lattice Match for Metal-Semiconductor Epitaxial Growth: Pb on Ge(111). United States: N. p., 2011.
Web. doi:10.1103/PhysRevLett.107.066802.
Tang, S. -J., Lee, Chang-Yeh, Huang, Chien-Chung, Chang, Tay-Rong, Cheng, Cheng-Maw, Tsuei, Ku-Ding, Jeng, H. -T., Yeh, V., & Chiang, Tai-Chang. Electronic versus Lattice Match for Metal-Semiconductor Epitaxial Growth: Pb on Ge(111). United States. https://doi.org/10.1103/PhysRevLett.107.066802
Tang, S. -J., Lee, Chang-Yeh, Huang, Chien-Chung, Chang, Tay-Rong, Cheng, Cheng-Maw, Tsuei, Ku-Ding, Jeng, H. -T., Yeh, V., and Chiang, Tai-Chang. Tue .
"Electronic versus Lattice Match for Metal-Semiconductor Epitaxial Growth: Pb on Ge(111)". United States. https://doi.org/10.1103/PhysRevLett.107.066802.
@article{osti_1100461,
title = {Electronic versus Lattice Match for Metal-Semiconductor Epitaxial Growth: Pb on Ge(111)},
author = {Tang, S. -J. and Lee, Chang-Yeh and Huang, Chien-Chung and Chang, Tay-Rong and Cheng, Cheng-Maw and Tsuei, Ku-Ding and Jeng, H. -T. and Yeh, V. and Chiang, Tai-Chang},
abstractNote = {},
doi = {10.1103/PhysRevLett.107.066802},
journal = {Physical Review Letters},
number = 6,
volume = 107,
place = {United States},
year = {Tue Aug 02 00:00:00 EDT 2011},
month = {Tue Aug 02 00:00:00 EDT 2011}
}
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1103/PhysRevLett.107.066802
https://doi.org/10.1103/PhysRevLett.107.066802
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Cited by: 17 works
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