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Title: Global electronic structure of semiconductor alloys through direct large-scale computations for III-V alloys Ga x In 1 x P

Authors:
;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1100327
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Name: Physical Review B Journal Volume: 83 Journal Issue: 16; Journal ID: ISSN 1098-0121
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Zhang, Yong, and Wang, Lin-Wang. Global electronic structure of semiconductor alloys through direct large-scale computations for III-V alloys Ga x In 1 − x P. United States: N. p., 2011. Web. doi:10.1103/PhysRevB.83.165208.
Zhang, Yong, & Wang, Lin-Wang. Global electronic structure of semiconductor alloys through direct large-scale computations for III-V alloys Ga x In 1 − x P. United States. doi:https://doi.org/10.1103/PhysRevB.83.165208
Zhang, Yong, and Wang, Lin-Wang. Tue . "Global electronic structure of semiconductor alloys through direct large-scale computations for III-V alloys Ga x In 1 − x P". United States. doi:https://doi.org/10.1103/PhysRevB.83.165208.
@article{osti_1100327,
title = {Global electronic structure of semiconductor alloys through direct large-scale computations for III-V alloys Ga x In 1 − x P},
author = {Zhang, Yong and Wang, Lin-Wang},
abstractNote = {},
doi = {10.1103/PhysRevB.83.165208},
journal = {Physical Review B},
number = 16,
volume = 83,
place = {United States},
year = {2011},
month = {4}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: https://doi.org/10.1103/PhysRevB.83.165208

Citation Metrics:
Cited by: 9 works
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Works referenced in this record:

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