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Title: Controlling doping in graphene through a SiC substrate: A first-principles study

Authors:
; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1100262
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 83; Journal Issue: 16; Journal ID: ISSN 1098-0121
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Huang, Bing, Xiang, H. J., and Wei, Su-Huai. Controlling doping in graphene through a SiC substrate: A first-principles study. United States: N. p., 2011. Web. doi:10.1103/PhysRevB.83.161405.
Huang, Bing, Xiang, H. J., & Wei, Su-Huai. Controlling doping in graphene through a SiC substrate: A first-principles study. United States. doi:10.1103/PhysRevB.83.161405.
Huang, Bing, Xiang, H. J., and Wei, Su-Huai. Mon . "Controlling doping in graphene through a SiC substrate: A first-principles study". United States. doi:10.1103/PhysRevB.83.161405.
@article{osti_1100262,
title = {Controlling doping in graphene through a SiC substrate: A first-principles study},
author = {Huang, Bing and Xiang, H. J. and Wei, Su-Huai},
abstractNote = {},
doi = {10.1103/PhysRevB.83.161405},
journal = {Physical Review B},
number = 16,
volume = 83,
place = {United States},
year = {2011},
month = {4}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevB.83.161405

Citation Metrics:
Cited by: 16 works
Citation information provided by
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