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Title: Controlling the growth morphology and phase segregation of Mn-doped Ga 2 Se 3 on Si(001)

Authors:
; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1100260
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 83; Journal Issue: 15; Journal ID: ISSN 1098-0121
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Lovejoy, T. C., Yitamben, E. N., Heald, S. M., Ohuchi, F. S., and Olmstead, M. A.. Controlling the growth morphology and phase segregation of Mn-doped Ga 2 Se 3 on Si(001). United States: N. p., 2011. Web. doi:10.1103/PhysRevB.83.155312.
Lovejoy, T. C., Yitamben, E. N., Heald, S. M., Ohuchi, F. S., & Olmstead, M. A.. Controlling the growth morphology and phase segregation of Mn-doped Ga 2 Se 3 on Si(001). United States. doi:10.1103/PhysRevB.83.155312.
Lovejoy, T. C., Yitamben, E. N., Heald, S. M., Ohuchi, F. S., and Olmstead, M. A.. Mon . "Controlling the growth morphology and phase segregation of Mn-doped Ga 2 Se 3 on Si(001)". United States. doi:10.1103/PhysRevB.83.155312.
@article{osti_1100260,
title = {Controlling the growth morphology and phase segregation of Mn-doped Ga 2 Se 3 on Si(001)},
author = {Lovejoy, T. C. and Yitamben, E. N. and Heald, S. M. and Ohuchi, F. S. and Olmstead, M. A.},
abstractNote = {},
doi = {10.1103/PhysRevB.83.155312},
journal = {Physical Review B},
number = 15,
volume = 83,
place = {United States},
year = {2011},
month = {4}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevB.83.155312

Citation Metrics:
Cited by: 1 work
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