Controlling the growth morphology and phase segregation of Mn-doped Ga Se on Si(001)
- Authors:
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1100260
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Physical Review B
- Additional Journal Information:
- Journal Volume: 83; Journal Issue: 15; Journal ID: ISSN 1098-0121
- Publisher:
- American Physical Society
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Lovejoy, T. C., Yitamben, E. N., Heald, S. M., Ohuchi, F. S., and Olmstead, M. A. Controlling the growth morphology and phase segregation of Mn-doped Ga 2 Se 3 on Si(001). United States: N. p., 2011.
Web. doi:10.1103/PhysRevB.83.155312.
Lovejoy, T. C., Yitamben, E. N., Heald, S. M., Ohuchi, F. S., & Olmstead, M. A. Controlling the growth morphology and phase segregation of Mn-doped Ga 2 Se 3 on Si(001). United States. https://doi.org/10.1103/PhysRevB.83.155312
Lovejoy, T. C., Yitamben, E. N., Heald, S. M., Ohuchi, F. S., and Olmstead, M. A. Mon .
"Controlling the growth morphology and phase segregation of Mn-doped Ga 2 Se 3 on Si(001)". United States. https://doi.org/10.1103/PhysRevB.83.155312.
@article{osti_1100260,
title = {Controlling the growth morphology and phase segregation of Mn-doped Ga 2 Se 3 on Si(001)},
author = {Lovejoy, T. C. and Yitamben, E. N. and Heald, S. M. and Ohuchi, F. S. and Olmstead, M. A.},
abstractNote = {},
doi = {10.1103/PhysRevB.83.155312},
journal = {Physical Review B},
number = 15,
volume = 83,
place = {United States},
year = {Mon Apr 18 00:00:00 EDT 2011},
month = {Mon Apr 18 00:00:00 EDT 2011}
}
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1103/PhysRevB.83.155312
https://doi.org/10.1103/PhysRevB.83.155312
Other availability
Cited by: 2 works
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