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Title: Electronic structure of the SiN x /TiN interface: A model system for superhard nanocomposites

Authors:
; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1100162
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Name: Physical Review B Journal Volume: 83 Journal Issue: 12; Journal ID: ISSN 1098-0121
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Patscheider, Jörg, Hellgren, Niklas, Haasch, Richard T., Petrov, Ivan, and Greene, J. E. Electronic structure of the SiN x /TiN interface: A model system for superhard nanocomposites. United States: N. p., 2011. Web. doi:10.1103/PhysRevB.83.125124.
Patscheider, Jörg, Hellgren, Niklas, Haasch, Richard T., Petrov, Ivan, & Greene, J. E. Electronic structure of the SiN x /TiN interface: A model system for superhard nanocomposites. United States. doi:10.1103/PhysRevB.83.125124.
Patscheider, Jörg, Hellgren, Niklas, Haasch, Richard T., Petrov, Ivan, and Greene, J. E. Thu . "Electronic structure of the SiN x /TiN interface: A model system for superhard nanocomposites". United States. doi:10.1103/PhysRevB.83.125124.
@article{osti_1100162,
title = {Electronic structure of the SiN x /TiN interface: A model system for superhard nanocomposites},
author = {Patscheider, Jörg and Hellgren, Niklas and Haasch, Richard T. and Petrov, Ivan and Greene, J. E.},
abstractNote = {},
doi = {10.1103/PhysRevB.83.125124},
journal = {Physical Review B},
number = 12,
volume = 83,
place = {United States},
year = {2011},
month = {3}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevB.83.125124

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Cited by: 20 works
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Works referenced in this record:

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