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Title: Ultrasonic attenuation in amorphous silicon at 50 and 100 GHz

Authors:
; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1100018
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 83; Journal Issue: 12; Journal ID: ISSN 1098-0121
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Hondongwa, D. B., Daly, B. C., Norris, T. B., Yan, B., Yang, J., and Guha, S. Ultrasonic attenuation in amorphous silicon at 50 and 100 GHz. United States: N. p., 2011. Web. doi:10.1103/PhysRevB.83.121303.
Hondongwa, D. B., Daly, B. C., Norris, T. B., Yan, B., Yang, J., & Guha, S. Ultrasonic attenuation in amorphous silicon at 50 and 100 GHz. United States. doi:10.1103/PhysRevB.83.121303.
Hondongwa, D. B., Daly, B. C., Norris, T. B., Yan, B., Yang, J., and Guha, S. Thu . "Ultrasonic attenuation in amorphous silicon at 50 and 100 GHz". United States. doi:10.1103/PhysRevB.83.121303.
@article{osti_1100018,
title = {Ultrasonic attenuation in amorphous silicon at 50 and 100 GHz},
author = {Hondongwa, D. B. and Daly, B. C. and Norris, T. B. and Yan, B. and Yang, J. and Guha, S.},
abstractNote = {},
doi = {10.1103/PhysRevB.83.121303},
journal = {Physical Review B},
number = 12,
volume = 83,
place = {United States},
year = {2011},
month = {3}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevB.83.121303

Citation Metrics:
Cited by: 4 works
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