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Title: Electronic structure and thermoelectric properties of Sb-based semiconducting half-Heusler compounds

Authors:
; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1099885
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 83; Journal Issue: 8; Journal ID: ISSN 1098-0121
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Lee, Mal-Soon, Poudeu, Ferdinand P., and Mahanti, S. D. Electronic structure and thermoelectric properties of Sb-based semiconducting half-Heusler compounds. United States: N. p., 2011. Web. doi:10.1103/PhysRevB.83.085204.
Lee, Mal-Soon, Poudeu, Ferdinand P., & Mahanti, S. D. Electronic structure and thermoelectric properties of Sb-based semiconducting half-Heusler compounds. United States. doi:10.1103/PhysRevB.83.085204.
Lee, Mal-Soon, Poudeu, Ferdinand P., and Mahanti, S. D. Thu . "Electronic structure and thermoelectric properties of Sb-based semiconducting half-Heusler compounds". United States. doi:10.1103/PhysRevB.83.085204.
@article{osti_1099885,
title = {Electronic structure and thermoelectric properties of Sb-based semiconducting half-Heusler compounds},
author = {Lee, Mal-Soon and Poudeu, Ferdinand P. and Mahanti, S. D.},
abstractNote = {},
doi = {10.1103/PhysRevB.83.085204},
journal = {Physical Review B},
number = 8,
volume = 83,
place = {United States},
year = {2011},
month = {2}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevB.83.085204

Citation Metrics:
Cited by: 58 works
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