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Title: Spin-Polarized to Valley-Polarized Transition in Graphene Bilayers at ν = 0 in High Magnetic Fields

Authors:
; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1099699
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 107; Journal Issue: 1; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Kim, Seyoung, Lee, Kayoung, and Tutuc, E. Spin-Polarized to Valley-Polarized Transition in Graphene Bilayers at ν = 0 in High Magnetic Fields. United States: N. p., 2011. Web. doi:10.1103/PhysRevLett.107.016803.
Kim, Seyoung, Lee, Kayoung, & Tutuc, E. Spin-Polarized to Valley-Polarized Transition in Graphene Bilayers at ν = 0 in High Magnetic Fields. United States. doi:10.1103/PhysRevLett.107.016803.
Kim, Seyoung, Lee, Kayoung, and Tutuc, E. Thu . "Spin-Polarized to Valley-Polarized Transition in Graphene Bilayers at ν = 0 in High Magnetic Fields". United States. doi:10.1103/PhysRevLett.107.016803.
@article{osti_1099699,
title = {Spin-Polarized to Valley-Polarized Transition in Graphene Bilayers at ν = 0 in High Magnetic Fields},
author = {Kim, Seyoung and Lee, Kayoung and Tutuc, E.},
abstractNote = {},
doi = {10.1103/PhysRevLett.107.016803},
journal = {Physical Review Letters},
number = 1,
volume = 107,
place = {United States},
year = {2011},
month = {6}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevLett.107.016803

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Cited by: 38 works
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