skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Speedup of Doping Fronts in Organic Semiconductors through Plasma Instability

Authors:
; ; ; ; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1099697
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 107; Journal Issue: 1; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Bychkov, V., Matyba, P., Akkerman, V., Modestov, M., Valiev, D., Brodin, G., Law, C. K., Marklund, M., and Edman, L. Speedup of Doping Fronts in Organic Semiconductors through Plasma Instability. United States: N. p., 2011. Web. doi:10.1103/PhysRevLett.107.016103.
Bychkov, V., Matyba, P., Akkerman, V., Modestov, M., Valiev, D., Brodin, G., Law, C. K., Marklund, M., & Edman, L. Speedup of Doping Fronts in Organic Semiconductors through Plasma Instability. United States. doi:10.1103/PhysRevLett.107.016103.
Bychkov, V., Matyba, P., Akkerman, V., Modestov, M., Valiev, D., Brodin, G., Law, C. K., Marklund, M., and Edman, L. Thu . "Speedup of Doping Fronts in Organic Semiconductors through Plasma Instability". United States. doi:10.1103/PhysRevLett.107.016103.
@article{osti_1099697,
title = {Speedup of Doping Fronts in Organic Semiconductors through Plasma Instability},
author = {Bychkov, V. and Matyba, P. and Akkerman, V. and Modestov, M. and Valiev, D. and Brodin, G. and Law, C. K. and Marklund, M. and Edman, L.},
abstractNote = {},
doi = {10.1103/PhysRevLett.107.016103},
journal = {Physical Review Letters},
number = 1,
volume = 107,
place = {United States},
year = {2011},
month = {6}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevLett.107.016103

Citation Metrics:
Cited by: 18 works
Citation information provided by
Web of Science

Save / Share: