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Title: Charged dopants in semiconductor nanowires under partially periodic boundary conditions

Authors:
; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1099684
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 83; Journal Issue: 24; Journal ID: ISSN 1098-0121
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Chan, Tzu-Liang, Zhang, S. B., and Chelikowsky, James R. Charged dopants in semiconductor nanowires under partially periodic boundary conditions. United States: N. p., 2011. Web. doi:10.1103/PhysRevB.83.245440.
Chan, Tzu-Liang, Zhang, S. B., & Chelikowsky, James R. Charged dopants in semiconductor nanowires under partially periodic boundary conditions. United States. doi:10.1103/PhysRevB.83.245440.
Chan, Tzu-Liang, Zhang, S. B., and Chelikowsky, James R. Tue . "Charged dopants in semiconductor nanowires under partially periodic boundary conditions". United States. doi:10.1103/PhysRevB.83.245440.
@article{osti_1099684,
title = {Charged dopants in semiconductor nanowires under partially periodic boundary conditions},
author = {Chan, Tzu-Liang and Zhang, S. B. and Chelikowsky, James R.},
abstractNote = {},
doi = {10.1103/PhysRevB.83.245440},
journal = {Physical Review B},
number = 24,
volume = 83,
place = {United States},
year = {2011},
month = {6}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevB.83.245440

Citation Metrics:
Cited by: 9 works
Citation information provided by
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