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Title: Band structure engineering of multinary chalcogenide topological insulators

Authors:
; ; ; ; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1099615
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 83; Journal Issue: 24; Journal ID: ISSN 1098-0121
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Chen, Shiyou, Gong, X. G., Duan, Chun-Gang, Zhu, Zi-Qiang, Chu, Jun-Hao, Walsh, Aron, Yao, Yu-Gui, Ma, Jie, and Wei, Su-Huai. Band structure engineering of multinary chalcogenide topological insulators. United States: N. p., 2011. Web. doi:10.1103/PhysRevB.83.245202.
Chen, Shiyou, Gong, X. G., Duan, Chun-Gang, Zhu, Zi-Qiang, Chu, Jun-Hao, Walsh, Aron, Yao, Yu-Gui, Ma, Jie, & Wei, Su-Huai. Band structure engineering of multinary chalcogenide topological insulators. United States. doi:10.1103/PhysRevB.83.245202.
Chen, Shiyou, Gong, X. G., Duan, Chun-Gang, Zhu, Zi-Qiang, Chu, Jun-Hao, Walsh, Aron, Yao, Yu-Gui, Ma, Jie, and Wei, Su-Huai. Fri . "Band structure engineering of multinary chalcogenide topological insulators". United States. doi:10.1103/PhysRevB.83.245202.
@article{osti_1099615,
title = {Band structure engineering of multinary chalcogenide topological insulators},
author = {Chen, Shiyou and Gong, X. G. and Duan, Chun-Gang and Zhu, Zi-Qiang and Chu, Jun-Hao and Walsh, Aron and Yao, Yu-Gui and Ma, Jie and Wei, Su-Huai},
abstractNote = {},
doi = {10.1103/PhysRevB.83.245202},
journal = {Physical Review B},
number = 24,
volume = 83,
place = {United States},
year = {2011},
month = {6}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevB.83.245202

Citation Metrics:
Cited by: 32 works
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