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Title: Absence of localized-spin magnetism in the narrow-gap semiconductor FeSb 2

Authors:
; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1099397
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review. B. Condensed Matter and Materials Physics
Additional Journal Information:
Journal Name: Physical Review. B. Condensed Matter and Materials Physics Journal Volume: 83 Journal Issue: 18; Journal ID: ISSN 1098-0121
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Zaliznyak, I. A., Savici, A. T., Garlea, V. O., Hu, Rongwei, and Petrovic, C. Absence of localized-spin magnetism in the narrow-gap semiconductor FeSb2. United States: N. p., 2011. Web. doi:10.1103/PhysRevB.83.184414.
Zaliznyak, I. A., Savici, A. T., Garlea, V. O., Hu, Rongwei, & Petrovic, C. Absence of localized-spin magnetism in the narrow-gap semiconductor FeSb2. United States. doi:10.1103/PhysRevB.83.184414.
Zaliznyak, I. A., Savici, A. T., Garlea, V. O., Hu, Rongwei, and Petrovic, C. Wed . "Absence of localized-spin magnetism in the narrow-gap semiconductor FeSb2". United States. doi:10.1103/PhysRevB.83.184414.
@article{osti_1099397,
title = {Absence of localized-spin magnetism in the narrow-gap semiconductor FeSb2},
author = {Zaliznyak, I. A. and Savici, A. T. and Garlea, V. O. and Hu, Rongwei and Petrovic, C.},
abstractNote = {},
doi = {10.1103/PhysRevB.83.184414},
journal = {Physical Review. B. Condensed Matter and Materials Physics},
number = 18,
volume = 83,
place = {United States},
year = {2011},
month = {5}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevB.83.184414

Citation Metrics:
Cited by: 8 works
Citation information provided by
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