Field-effect mobility enhanced by tuning the Fermi level into the band gap of Bi2Se3

Wei, Peng; Wang, Zhiyong; Liu, Xinfei; Aji, Vivek; Shi, Jing

doi:10.1103/PhysRevB.85.201402

Title: Field-effect mobility enhanced by tuning the Fermi level into the band gap of Bi₂Se₃

Authors:: Wei, Peng; Wang, Zhiyong; Liu, Xinfei; Aji, Vivek; Shi, Jing

Publication Date:: Wed May 09 00:00:00 EDT 2012

Sponsoring Org.:: USDOE

OSTI Identifier:: 1098904

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Physical Review. B, Condensed Matter and Materials Physics

Additional Journal Information:: Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Volume: 85 Journal Issue: 20; Journal ID: ISSN 1098-0121

Publisher:: American Physical Society

Country of Publication:: United States

Language:: English

Citation Formats


                    Wei, Peng, Wang, Zhiyong, Liu, Xinfei, Aji, Vivek, and Shi, Jing. Field-effect mobility enhanced by tuning the Fermi level into the band gap of Bi2Se3.  United States: N. p., 2012. 
Web.  doi:10.1103/PhysRevB.85.201402.

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                    Wei, Peng, Wang, Zhiyong, Liu, Xinfei, Aji, Vivek, & Shi, Jing. Field-effect mobility enhanced by tuning the Fermi level into the band gap of Bi2Se3.  United States.  https://doi.org/10.1103/PhysRevB.85.201402

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                    Wei, Peng, Wang, Zhiyong, Liu, Xinfei, Aji, Vivek, and Shi, Jing. Wed .  
"Field-effect mobility enhanced by tuning the Fermi level into the band gap of Bi2Se3".  United States.  https://doi.org/10.1103/PhysRevB.85.201402.

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@article{osti_1098904,

  title        = {Field-effect mobility enhanced by tuning the Fermi level into the band gap of Bi2Se3},

  author       = {Wei, Peng and Wang, Zhiyong and Liu, Xinfei and Aji, Vivek and Shi, Jing},

  abstractNote = {},

  doi          = {10.1103/PhysRevB.85.201402},

  journal      = {Physical Review. B, Condensed Matter and Materials Physics},

  number       = 20,

  volume       = 85,

  place        = {United States},

  year         = {Wed May 09 00:00:00 EDT 2012},

  month        = {Wed May 09 00:00:00 EDT 2012}

}

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Title: Field-effect mobility enhanced by tuning the Fermi level into the band gap of Bi2Se3

Citation Formats

Massive Dirac Fermion on the Surface of a Magnetically Doped Topological Insulator journal, August 2010

Bulk Band Gap and Surface State Conduction Observed in Voltage-Tuned Crystals of the Topological Insulator Bi 2 Se 3 journal, May 2011

Aharonov–Bohm interference in topological insulator nanoribbons journal, December 2009

Quantum Interference in Macroscopic Crystals of Nonmetallic Bi2Se3 journal, December 2009

Quantum Spin Hall Insulator State in HgTe Quantum Wells journal, November 2007

Surface conduction of topological Dirac electrons in bulk insulating Bi2Se3 journal, April 2012

Observation of a large-gap topological-insulator class with a single Dirac cone on the surface journal, May 2009

Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface journal, May 2009

Gate-Voltage Control of Chemical Potential and Weak Antilocalization in Bi 2 Se 3 journal, October 2010

Topological surface states protected from backscattering by chiral spin texture journal, August 2009

Electrically tunable surface-to-bulk coherent coupling in topological insulator thin films journal, December 2011

Surface State Transport and Ambipolar Electric Field Effect in Bi2Se3Nanodevices journal, December 2010

Manipulating surface states in topological insulator nanoribbons journal, February 2011

Tuning the Fermi level in Bi2Se3 bulk materials and transport devices journal, August 2011

Single valley Dirac fermions in zero-gap HgTe quantum wells journal, February 2011

The electronic properties of graphene journal, January 2009

Crossover of the three-dimensional topological insulator Bi2Se3 to the two-dimensional limit journal, June 2010

Rapid Surface Oxidation as a Source of Surface Degradation Factor for Bi 2 Se 3 journal, May 2011

Tuning carrier type and density in Bi2Se3 by Ca-doping journal, July 2010

Bulk Fermi surface coexistence with Dirac surface state in Bi 2 Se 3 : A comparison of photoemission and Shubnikov–de Haas measurements journal, May 2010

Two-dimensional surface state in the quantum limit of a topological insulator journal, November 2010

Gate-tuned normal and superconducting transport at the surface of a topological insulator journal, September 2011

Insulating Behavior in Ultrathin Bismuth Selenide Field Effect Transistors journal, May 2011

A tunable topological insulator in the spin helical Dirac transport regime journal, July 2009

Two-dimensional gas of massless Dirac fermions in graphene journal, November 2005

Title: Field-effect mobility enhanced by tuning the Fermi level into the band gap of Bi₂Se₃

Massive Dirac Fermion on the Surface of a Magnetically Doped Topological Insulator
journal, August 2010

Bulk Band Gap and Surface State Conduction Observed in Voltage-Tuned Crystals of the Topological Insulator ${Bi}_{2} {Se}_{3}$
journal, May 2011

Aharonov–Bohm interference in topological insulator nanoribbons
journal, December 2009

Quantum Interference in Macroscopic Crystals of Nonmetallic ${Bi}_{2} {Se}_{3}$
journal, December 2009

Quantum Spin Hall Insulator State in HgTe Quantum Wells
journal, November 2007

Surface conduction of topological Dirac electrons in bulk insulating Bi2Se3
journal, April 2012

Observation of a large-gap topological-insulator class with a single Dirac cone on the surface
journal, May 2009

Topological insulators in Bi₂Se₃, Bi₂Te₃ and Sb₂Te₃ with a single Dirac cone on the surface
journal, May 2009

Gate-Voltage Control of Chemical Potential and Weak Antilocalization in ${Bi}_{2} {Se}_{3}$
journal, October 2010

Topological surface states protected from backscattering by chiral spin texture
journal, August 2009

Electrically tunable surface-to-bulk coherent coupling in topological insulator thin films
journal, December 2011

Surface State Transport and Ambipolar Electric Field Effect in Bi₂Se₃Nanodevices
journal, December 2010

Manipulating surface states in topological insulator nanoribbons
journal, February 2011

Tuning the Fermi level in Bi2Se3 bulk materials and transport devices
journal, August 2011

Single valley Dirac fermions in zero-gap HgTe quantum wells
journal, February 2011

The electronic properties of graphene
journal, January 2009

Crossover of the three-dimensional topological insulator Bi2Se3 to the two-dimensional limit
journal, June 2010

Rapid Surface Oxidation as a Source of Surface Degradation Factor for Bi ₂ Se ₃
journal, May 2011

Tuning carrier type and density in Bi2Se3 by Ca-doping
journal, July 2010

Bulk Fermi surface coexistence with Dirac surface state in ${Bi}_{2} {Se}_{3}$ : A comparison of photoemission and Shubnikov–de Haas measurements
journal, May 2010

Two-dimensional surface state in the quantum limit of a topological insulator
journal, November 2010

Gate-tuned normal and superconducting transport at the surface of a topological insulator
journal, September 2011

Insulating Behavior in Ultrathin Bismuth Selenide Field Effect Transistors
journal, May 2011

A tunable topological insulator in the spin helical Dirac transport regime
journal, July 2009

Two-dimensional gas of massless Dirac fermions in graphene
journal, November 2005