Atomic and electronic structures of SrTiO3/GaAs heterointerfaces: An 80-kV atomic-resolution electron energy-loss spectroscopy study

Qiao, Q.; Klie, R. F.; Öğüt, S.; Idrobo, J. C.

doi:10.1103/PhysRevB.85.165406

Title: Atomic and electronic structures of SrTiO₃/GaAs heterointerfaces: An 80-kV atomic-resolution electron energy-loss spectroscopy study

Authors:: Qiao, Q.; Klie, R. F.; Öğüt, S.; Idrobo, J. C.

Publication Date:: Tue Apr 03 00:00:00 EDT 2012

Sponsoring Org.:: USDOE

OSTI Identifier:: 1098658

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Physical Review. B, Condensed Matter and Materials Physics

Additional Journal Information:: Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Volume: 85 Journal Issue: 16; Journal ID: ISSN 1098-0121

Publisher:: American Physical Society

Country of Publication:: United States

Language:: English

Citation Formats


                    Qiao, Q., Klie, R. F., Öğüt, S., and Idrobo, J. C. Atomic and electronic structures of SrTiO3/GaAs heterointerfaces: An 80-kV atomic-resolution electron energy-loss spectroscopy study.  United States: N. p., 2012. 
Web.  doi:10.1103/PhysRevB.85.165406.

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                    Qiao, Q., Klie, R. F., Öğüt, S., & Idrobo, J. C. Atomic and electronic structures of SrTiO3/GaAs heterointerfaces: An 80-kV atomic-resolution electron energy-loss spectroscopy study.  United States.  https://doi.org/10.1103/PhysRevB.85.165406

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                    Qiao, Q., Klie, R. F., Öğüt, S., and Idrobo, J. C. Tue .  
"Atomic and electronic structures of SrTiO3/GaAs heterointerfaces: An 80-kV atomic-resolution electron energy-loss spectroscopy study".  United States.  https://doi.org/10.1103/PhysRevB.85.165406.

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@article{osti_1098658,

  title        = {Atomic and electronic structures of SrTiO3/GaAs heterointerfaces: An 80-kV atomic-resolution electron energy-loss spectroscopy study},

  author       = {Qiao, Q. and Klie, R. F. and Öğüt, S. and Idrobo, J. C.},

  abstractNote = {},

  doi          = {10.1103/PhysRevB.85.165406},

  journal      = {Physical Review. B, Condensed Matter and Materials Physics},

  number       = 16,

  volume       = 85,

  place        = {United States},

  year         = {Tue Apr 03 00:00:00 EDT 2012},

  month        = {Tue Apr 03 00:00:00 EDT 2012}

}

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Works referenced in this record:

Valence determination of titanium and iron using electron energy loss spectroscopy
journal, January 1992

Sankararaman, M.; Perry, D.
Journal of Materials Science, Vol. 27, Issue 10
DOI: 10.1007/BF00540697

Room-temperature ferroelectricity in strained SrTiO₃
journal, August 2004

Haeni, J. H.; Irvin, P.; Chang, W.
Nature, Vol. 430, Issue 7001, p. 758-761
DOI: 10.1038/nature02773

Atom-by-atom structural and chemical analysis by annular dark-field electron microscopy
journal, March 2010

Krivanek, Ondrej L.; Chisholm, Matthew F.; Nicolosi, Valeria
Nature, Vol. 464, Issue 7288
DOI: 10.1038/nature08879

Atomic-scale imaging of nanoengineered oxygen vacancy profiles in SrTiO3
journal, August 2004

Muller, David A.; Nakagawa, Naoyuki; Ohtomo, Akira
Nature, Vol. 430, Issue 7000
DOI: 10.1038/nature02756

A Ferroelectric Oxide Made Directly on Silicon
journal, April 2009

Warusawithana, M. P.; Cen, C.; Sleasman, C. R.
Science, Vol. 324, Issue 5925
DOI: 10.1126/science.1169678

Crystalline Oxides on Silicon
journal, April 2010

Reiner, James W.; Kolpak, Alexie M.; Segal, Yaron
Advanced Materials, Vol. 22, Issue 26-27
DOI: 10.1002/adma.200904306

Ferroelectricity at the Nanoscale: Local Polarization in Oxide Thin Films and Heterostructures
journal, January 2004

Ahn, C. H.
Science, Vol. 303, Issue 5657
DOI: 10.1126/science.1092508

Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al2O3
journal, December 2005

Huang, M. L.; Chang, Y. C.; Chang, C. H.
Applied Physics Letters, Vol. 87, Issue 25
DOI: 10.1063/1.2146060

Thermal reaction of Ti evaporated on GaAs
journal, August 1976

Wada, O.; Yanagisawa, S.; Takanashi, H.
Applied Physics Letters, Vol. 29, Issue 4
DOI: 10.1063/1.89039

Atomic structure of epitaxial SrTiO3–GaAs(001) heterojunctions
journal, October 2005

Klie, R. F.; Zhu, Y.; Altman, E. I.
Applied Physics Letters, Vol. 87, Issue 14
DOI: 10.1063/1.2077837

Study of the structure and properties of the Ti/GaAs interface
journal, July 1987

Kniffin, Margaret; Helms, C. R.
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 5, Issue 4
DOI: 10.1116/1.574593

The Materials Science of Functional Oxide Thin Films
journal, October 2009

Blamire, Mark G.; MacManus-Driscoll, Judith L.; Mathur, Neil D.
Advanced Materials, Vol. 21, Issue 38â39
DOI: 10.1002/adma.200900947

Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
journal, October 1996

Kresse, G.; Furthmüller, J.
Physical Review B, Vol. 54, Issue 16, p. 11169-11186
DOI: 10.1103/PhysRevB.54.11169

Atomic-Resolution STEM in the Aberration-Corrected JEOL JEM2200FS
journal, January 2008

Klie, Robert F.; Johnson, Craig; Zhu, Yimei
Microscopy and Microanalysis, Vol. 14, Issue 1
DOI: 10.1017/S1431927608080136

Physical and electrical characterizations of metal-oxide-semiconductor capacitors fabricated on GaAs substrates with different surface chemical treatments and Al[sub 2]O[sub 3] gate dielectric
journal, January 2009

Garcia-Gutierrez, Domingo I.; Shahrjerdi, Davood; Kaushik, Vidya
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 27, Issue 6
DOI: 10.1116/1.3256229

Epitaxial Cubic Gadolinium Oxide as a Dielectric for Gallium Arsenide Passivation
journal, March 1999

Hong, M.
Science, Vol. 283, Issue 5409
DOI: 10.1126/science.283.5409.1897

Electron counting model and its application to island structures on molecular-beam epitaxy grown GaAs(001) and ZnSe(001)
journal, November 1989

Pashley, M. D.
Physical Review B, Vol. 40, Issue 15
DOI: 10.1103/PhysRevB.40.10481

Band alignment at epitaxial SrTiO3–GaAs(001) heterojunction
journal, February 2005

Liang, Y.; Curless, J.; McCready, D.
Applied Physics Letters, Vol. 86, Issue 8
DOI: 10.1063/1.1871364

Oxygen $K$ near-edge fine structure: An electron-energy-loss investigation with comparisons to new theory for selected $3 d$ Transition-metal oxides
journal, June 1982

Grunes, L. A.; Leapman, R. D.; Wilker, C. N.
Physical Review B, Vol. 25, Issue 12
DOI: 10.1103/PhysRevB.25.7157

Geometry and electronic structure of GaAs(001)(2×4) reconstructions
journal, December 1996

Schmidt, W. G.; Bechstedt, F.
Physical Review B, Vol. 54, Issue 23
DOI: 10.1103/PhysRevB.54.16742

Growth and characterization of (111) and (001) oriented MgO films on (001) GaAs
journal, April 1993

Tarsa, E. J.; De Graef, M.; Clarke, D. R.
Journal of Applied Physics, Vol. 73, Issue 7
DOI: 10.1063/1.352975

Anomalous lattice expansion of coherently strained ${SrTiO}_{3}$ thin films grown on $Si (001)$ by kinetically controlled sequential deposition
journal, January 2006

Woicik, J.; Li, H.; Zschack, P.
Physical Review B, Vol. 73, Issue 2
DOI: 10.1103/PhysRevB.73.024112

Stable structure and effects of the substrate Ti pre-treatment on the epitaxial growth of SrTiO ₃ on GaAs
journal, May 2009

Wang, Jianli; Wu, X. S.; Bai, Dongmei
EPL (Europhysics Letters), Vol. 86, Issue 4
DOI: 10.1209/0295-5075/86/46008

Electronic properties and chemistry of Ti/GaAs and Pd/GaAs interfaces
journal, April 1986

Ludeke, R.; Landgren, G.
Physical Review B, Vol. 33, Issue 8
DOI: 10.1103/PhysRevB.33.5526

Atomic structure of GaAs(100)‐(2×1) and (2×4) reconstructed surfaces
journal, July 1987

Chadi, D. J.
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 5, Issue 4
DOI: 10.1116/1.574366

Atomic Structure of the $GaAs (001) - (2 \times 4)$ Surface Resolved Using Scanning Tunneling Microscopy and First-Principles Theory
journal, October 1999

LaBella, V. P.; Yang, H.; Bullock, D. W.
Physical Review Letters, Vol. 83, Issue 15
DOI: 10.1103/PhysRevLett.83.2989

HfO2 and Al2O3 gate dielectrics on GaAs grown by atomic layer deposition
journal, April 2005

Frank, Martin M.; Wilk, Glen D.; Starodub, Dmitri
Applied Physics Letters, Vol. 86, Issue 15
DOI: 10.1063/1.1899745

Hetero-epitaxy of perovskite oxides on GaAs(001) by molecular beam epitaxy
journal, August 2004

Liang, Y.; Kulik, J.; Eschrich, T. C.
Applied Physics Letters, Vol. 85, Issue 7
DOI: 10.1063/1.1783016

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Title: Atomic and electronic structures of SrTiO3/GaAs heterointerfaces: An 80-kV atomic-resolution electron energy-loss spectroscopy study

Citation Formats

Valence determination of titanium and iron using electron energy loss spectroscopy journal, January 1992

Room-temperature ferroelectricity in strained SrTiO3 journal, August 2004

Atom-by-atom structural and chemical analysis by annular dark-field electron microscopy journal, March 2010

Atomic-scale imaging of nanoengineered oxygen vacancy profiles in SrTiO3 journal, August 2004

A Ferroelectric Oxide Made Directly on Silicon journal, April 2009

Crystalline Oxides on Silicon journal, April 2010

Ferroelectricity at the Nanoscale: Local Polarization in Oxide Thin Films and Heterostructures journal, January 2004

Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al2O3 journal, December 2005

Thermal reaction of Ti evaporated on GaAs journal, August 1976

Atomic structure of epitaxial SrTiO3–GaAs(001) heterojunctions journal, October 2005

Study of the structure and properties of the Ti/GaAs interface journal, July 1987

The Materials Science of Functional Oxide Thin Films journal, October 2009

Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set journal, October 1996

Atomic-Resolution STEM in the Aberration-Corrected JEOL JEM2200FS journal, January 2008

Physical and electrical characterizations of metal-oxide-semiconductor capacitors fabricated on GaAs substrates with different surface chemical treatments and Al[sub 2]O[sub 3] gate dielectric journal, January 2009

Epitaxial Cubic Gadolinium Oxide as a Dielectric for Gallium Arsenide Passivation journal, March 1999

Electron counting model and its application to island structures on molecular-beam epitaxy grown GaAs(001) and ZnSe(001) journal, November 1989

Band alignment at epitaxial SrTiO3–GaAs(001) heterojunction journal, February 2005

Oxygen K near-edge fine structure: An electron-energy-loss investigation with comparisons to new theory for selected 3 d Transition-metal oxides journal, June 1982

Geometry and electronic structure of GaAs(001)(2×4) reconstructions journal, December 1996

Growth and characterization of (111) and (001) oriented MgO films on (001) GaAs journal, April 1993

Anomalous lattice expansion of coherently strained SrTiO 3 thin films grown on Si ( 001 ) by kinetically controlled sequential deposition journal, January 2006

Stable structure and effects of the substrate Ti pre-treatment on the epitaxial growth of SrTiO 3 on GaAs journal, May 2009

Electronic properties and chemistry of Ti/GaAs and Pd/GaAs interfaces journal, April 1986

Atomic structure of GaAs(100)‐(2×1) and (2×4) reconstructed surfaces journal, July 1987

Atomic Structure of the GaAs ( 001 ) − ( 2 × 4 ) Surface Resolved Using Scanning Tunneling Microscopy and First-Principles Theory journal, October 1999

HfO2 and Al2O3 gate dielectrics on GaAs grown by atomic layer deposition journal, April 2005

Hetero-epitaxy of perovskite oxides on GaAs(001) by molecular beam epitaxy journal, August 2004

Title: Atomic and electronic structures of SrTiO₃/GaAs heterointerfaces: An 80-kV atomic-resolution electron energy-loss spectroscopy study

Valence determination of titanium and iron using electron energy loss spectroscopy
journal, January 1992

Room-temperature ferroelectricity in strained SrTiO₃
journal, August 2004

Atom-by-atom structural and chemical analysis by annular dark-field electron microscopy
journal, March 2010

Atomic-scale imaging of nanoengineered oxygen vacancy profiles in SrTiO3
journal, August 2004

A Ferroelectric Oxide Made Directly on Silicon
journal, April 2009

Crystalline Oxides on Silicon
journal, April 2010

Ferroelectricity at the Nanoscale: Local Polarization in Oxide Thin Films and Heterostructures
journal, January 2004

Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al2O3
journal, December 2005

Thermal reaction of Ti evaporated on GaAs
journal, August 1976

Atomic structure of epitaxial SrTiO3–GaAs(001) heterojunctions
journal, October 2005

Study of the structure and properties of the Ti/GaAs interface
journal, July 1987

The Materials Science of Functional Oxide Thin Films
journal, October 2009

Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
journal, October 1996

Atomic-Resolution STEM in the Aberration-Corrected JEOL JEM2200FS
journal, January 2008

Physical and electrical characterizations of metal-oxide-semiconductor capacitors fabricated on GaAs substrates with different surface chemical treatments and Al[sub 2]O[sub 3] gate dielectric
journal, January 2009

Epitaxial Cubic Gadolinium Oxide as a Dielectric for Gallium Arsenide Passivation
journal, March 1999

Electron counting model and its application to island structures on molecular-beam epitaxy grown GaAs(001) and ZnSe(001)
journal, November 1989

Band alignment at epitaxial SrTiO3–GaAs(001) heterojunction
journal, February 2005

Oxygen $K$ near-edge fine structure: An electron-energy-loss investigation with comparisons to new theory for selected $3 d$ Transition-metal oxides
journal, June 1982

Geometry and electronic structure of GaAs(001)(2×4) reconstructions
journal, December 1996

Growth and characterization of (111) and (001) oriented MgO films on (001) GaAs
journal, April 1993

Anomalous lattice expansion of coherently strained ${SrTiO}_{3}$ thin films grown on $Si (001)$ by kinetically controlled sequential deposition
journal, January 2006

Stable structure and effects of the substrate Ti pre-treatment on the epitaxial growth of SrTiO ₃ on GaAs
journal, May 2009

Electronic properties and chemistry of Ti/GaAs and Pd/GaAs interfaces
journal, April 1986

Atomic structure of GaAs(100)‐(2×1) and (2×4) reconstructed surfaces
journal, July 1987

Atomic Structure of the $GaAs (001) - (2 \times 4)$ Surface Resolved Using Scanning Tunneling Microscopy and First-Principles Theory
journal, October 1999

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journal, April 2005

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journal, August 2004