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Title: Fractional quantum Hall effect of two-dimensional electrons in high-mobility Si/SiGe field-effect transistors

Authors:
; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1098628
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Name: Physical Review B Journal Volume: 85 Journal Issue: 12; Journal ID: ISSN 1098-0121
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Lu, T. M., Pan, W., Tsui, D. C., Lee, C. -H., and Liu, C. W. Fractional quantum Hall effect of two-dimensional electrons in high-mobility Si/SiGe field-effect transistors. United States: N. p., 2012. Web. doi:10.1103/PhysRevB.85.121307.
Lu, T. M., Pan, W., Tsui, D. C., Lee, C. -H., & Liu, C. W. Fractional quantum Hall effect of two-dimensional electrons in high-mobility Si/SiGe field-effect transistors. United States. doi:10.1103/PhysRevB.85.121307.
Lu, T. M., Pan, W., Tsui, D. C., Lee, C. -H., and Liu, C. W. Fri . "Fractional quantum Hall effect of two-dimensional electrons in high-mobility Si/SiGe field-effect transistors". United States. doi:10.1103/PhysRevB.85.121307.
@article{osti_1098628,
title = {Fractional quantum Hall effect of two-dimensional electrons in high-mobility Si/SiGe field-effect transistors},
author = {Lu, T. M. and Pan, W. and Tsui, D. C. and Lee, C. -H. and Liu, C. W.},
abstractNote = {},
doi = {10.1103/PhysRevB.85.121307},
journal = {Physical Review B},
number = 12,
volume = 85,
place = {United States},
year = {2012},
month = {3}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevB.85.121307

Citation Metrics:
Cited by: 11 works
Citation information provided by
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