Electrochemical ferroelectric switching: Origin of polarization reversal in ultrathin films

Bristowe, N. C.; Stengel, Massimiliano; Littlewood, P. B.; Pruneda, J. M.; Artacho, Emilio

doi:10.1103/PhysRevB.85.024106

Title: Electrochemical ferroelectric switching: Origin of polarization reversal in ultrathin films

Full Record
Other Related Research

Authors:: Bristowe, N. C.; Stengel, Massimiliano; Littlewood, P. B.; Pruneda, J. M.; Artacho, Emilio

Publication Date:: Mon Jan 09 00:00:00 EST 2012

Sponsoring Org.:: USDOE

OSTI Identifier:: 1098553

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Physical Review B

Additional Journal Information:: Journal Volume: 85; Journal Issue: 2; Journal ID: ISSN 1098-0121

Publisher:: American Physical Society

Country of Publication:: United States

Language:: English

Citation Formats


                    Bristowe, N. C., Stengel, Massimiliano, Littlewood, P. B., Pruneda, J. M., and Artacho, Emilio. Electrochemical ferroelectric switching: Origin of polarization reversal in ultrathin films.  United States: N. p., 2012. 
Web.  doi:10.1103/PhysRevB.85.024106.

Copy to clipboard


                    Bristowe, N. C., Stengel, Massimiliano, Littlewood, P. B., Pruneda, J. M., & Artacho, Emilio. Electrochemical ferroelectric switching: Origin of polarization reversal in ultrathin films.  United States.  https://doi.org/10.1103/PhysRevB.85.024106

Copy to clipboard


                    Bristowe, N. C., Stengel, Massimiliano, Littlewood, P. B., Pruneda, J. M., and Artacho, Emilio. Mon .  
"Electrochemical ferroelectric switching: Origin of polarization reversal in ultrathin films".  United States.  https://doi.org/10.1103/PhysRevB.85.024106.

Copy to clipboard


                    
@article{osti_1098553,

  title        = {Electrochemical ferroelectric switching: Origin of polarization reversal in ultrathin films},

  author       = {Bristowe, N. C. and Stengel, Massimiliano and Littlewood, P. B. and Pruneda, J. M. and Artacho, Emilio},

  abstractNote = {},

  doi          = {10.1103/PhysRevB.85.024106},

  journal      = {Physical Review B},

  number       = 2,

  volume       = 85,

  place        = {United States},

  year         = {Mon Jan 09 00:00:00 EST 2012},

  month        = {Mon Jan 09 00:00:00 EST 2012}

}

Copy to clipboard

Journal Article:

Free Publicly Available Full Text

Accepted Manuscript (Publisher)

Publisher's Version of Record
https://doi.org/10.1103/PhysRevB.85.024106

Other availability

Search WorldCat to find libraries that may hold this journal

Citation Metrics:

Cited by: 38 works

Citation information provided by
Web of Science

Save / Share:

Export Metadata

Save to My Library

Similar Records in DOE PAGES and OSTI.GOV collections:

Giant quadratic electro-optical effect during polarization switching in ultrathin ferroelectric polymer films

Journal Article Blinov, L. M., E-mail: lev39blinov@gmail.com ; Lazarev, V V ; Palto, S P ; ... - Journal of Experimental and Theoretical Physics

The low-frequency quadratic electro-optical effect with a maximum electro-optical coefficient of g = 8 Multiplication-Sign 10{sup -19} m{sup 2}/V{sup 2} (i.e., four orders of magnitude greater than the standard high-frequency value) has been studied in thin films of ferroelectric polymer PVDF(70%)-TrFE(30%). The observed effect is related to the process of spontaneous polarization switching, during which the electron oscillators of C-F and C-H dipole groups rotate to become parallel to the applied field. As a result, the ellipsoid of the refractive index exhibits narrowing in the direction perpendicular to the field. The field dependence of the electro-optical coefficient g correlates withmore »« less
https://doi.org/10.1134/S1063776112030016
Polarization induced resistance switching effect in ferroelectric vinylidene-fluoride/trifluoroethylene copolymer ultrathin films

Journal Article Usui, S., E-mail: j1513602@ed.tus.ac.jp ; Nakajima, T. ; Hashizume, Y. ; ... - Applied Physics Letters

We observed a clear polarization reversal-induced resistance switching effect in ferroelectric Vinylidene-fluoride (VDF)/Trifluoroethylene (TrFE) copolymer thin films. Pt and Au were used as the bottom and top electrodes, respectively, and the thickness of the VDF/TrFE copolymer film was adjusted to be 10 nm. The conduction current was 100 times higher in the case of the spontaneous polarization of the VDF/TrFE film towards the Au electrode than that in the case of the opposite direction. This resistance switching was confirmed to be reproducible after 10 successive polarization reversals.
https://doi.org/10.1063/1.4900490
Polarization switching without domain formation at the intrinsic coercive field in ultrathin ferroelectric PbTiO{sub 3}.

Journal Article Highland, M J ; Fister, T T ; Richard, M -I ; ... - Phys. Rev. Lett.

Polarization switching in ferroelectrics has been thought to occur only through the nucleation and growth of new domains. Here we use in situ synchrotron x-ray scattering to monitor switching controlled by applied chemical potential. In sufficiently thin PbTiO{sub 3} films, nucleation is suppressed and switching occurs by a continuous mechanism, i.e., by uniform decrease and inversion of the polarization without domain formation. The observed lattice parameter shows that the electric field in the film during switching reaches the theoretical intrinsic coercive field.
https://doi.org/10.1103/PhysRevLett.105.167601
An unusual route to polarization reversal in ferroelectric ultrathin nanowires

Journal Article Herchig, R. ; Chang, Ch. -M. ; Mani, B. K. ; ... - Applied Physics Letters

Ferroelectric nanowires are promising candidates for miniaturized ferroelectric devices. Some potential nanoscale applications of the nanowires, such as ultra high density ferroelectric memory, utilize their reversible polarization. To meet the ever increasing demand for low energy consumption, it is extremely desirable to reduce the operational fields associated with polarization reversal. In this Letter, we use first-principles-based simulations to explore an unusual route to polarization reversal that utilizes a combination of relatively low bias field and THz pulsed radiation. Such an approach allows for lower operational fields and may lead to other potential applications such as THz radiation sensing and remotemore » switches.« less
https://doi.org/10.1063/1.4890128
Ferroelectric Domain Scaling and Switching in Ultrathin BiFeO3 Films Deposited on Vicinal Substrates

Journal Article Shelke, Vilas ; Mazumdar, Dipanjan ; Jesse, Stephen ; ... - New Journal of Physics

We report on electrically switchable polarization and ferroelectric domain scaling over a thickness range of 5-100 nm in BiFeO{sub 3} films deposited on [110] vicinal substrates. The BiFeO{sub 3} films of variable thickness were deposited with SrRuO{sub 3} bottom layer using the pulsed laser deposition technique. The domains are engineered into preferentially oriented patterns due to substrate vicinality along the [110] direction. The domain width scales closely with the square root of film thickness, in agreement with the Landau-Lifschitz-Kittel (LLK) law. Switching spectroscopy piezo-response force microscopy provides clear evidence for the ferroelectric switching behavior in all the films.
https://doi.org/10.1088/1367-2630/14/5/053040

Similar Records