Surface Origin of High Conductivities in Undoped In2O3 Thin Films

Lany, S.; Zakutayev, A.; Mason, T. O.; Wager, J. F.; Poeppelmeier, K. R.; Perkins, J. D.; Berry, J. J.; Ginley, D. S.; Zunger, A.

doi:10.1103/PhysRevLett.108.016802

Title: Surface Origin of High Conductivities in Undoped In₂O₃ Thin Films

Authors:: Lany, S.; Zakutayev, A.; Mason, T. O.; Wager, J. F.; Poeppelmeier, K. R.; Perkins, J. D.; Berry, J. J.; Ginley, D. S.; Zunger, A.

Publication Date:: Thu Jan 05 00:00:00 EST 2012

Sponsoring Org.:: USDOE

OSTI Identifier:: 1098541

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Physical Review Letters

Additional Journal Information:: Journal Name: Physical Review Letters Journal Volume: 108 Journal Issue: 1; Journal ID: ISSN 0031-9007

Publisher:: American Physical Society

Country of Publication:: United States

Language:: English

Citation Formats


                    Lany, S., Zakutayev, A., Mason, T. O., Wager, J. F., Poeppelmeier, K. R., Perkins, J. D., Berry, J. J., Ginley, D. S., and Zunger, A. Surface Origin of High Conductivities in Undoped In2O3 Thin Films.  United States: N. p., 2012. 
Web.  doi:10.1103/PhysRevLett.108.016802.

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                    Lany, S., Zakutayev, A., Mason, T. O., Wager, J. F., Poeppelmeier, K. R., Perkins, J. D., Berry, J. J., Ginley, D. S., & Zunger, A. Surface Origin of High Conductivities in Undoped In2O3 Thin Films.  United States.  https://doi.org/10.1103/PhysRevLett.108.016802

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                    Lany, S., Zakutayev, A., Mason, T. O., Wager, J. F., Poeppelmeier, K. R., Perkins, J. D., Berry, J. J., Ginley, D. S., and Zunger, A. Thu .  
"Surface Origin of High Conductivities in Undoped In2O3 Thin Films".  United States.  https://doi.org/10.1103/PhysRevLett.108.016802.

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@article{osti_1098541,

  title        = {Surface Origin of High Conductivities in Undoped In2O3 Thin Films},

  author       = {Lany, S. and Zakutayev, A. and Mason, T. O. and Wager, J. F. and Poeppelmeier, K. R. and Perkins, J. D. and Berry, J. J. and Ginley, D. S. and Zunger, A.},

  abstractNote = {},

  doi          = {10.1103/PhysRevLett.108.016802},

  journal      = {Physical Review Letters},

  number       = 1,

  volume       = 108,

  place        = {United States},

  year         = {Thu Jan 05 00:00:00 EST 2012},

  month        = {Thu Jan 05 00:00:00 EST 2012}

}

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Works referenced in this record:

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Similar Records

Title: Surface Origin of High Conductivities in Undoped In2O3 Thin Films

Citation Formats

Magnetoresistance of Single Crystals of Indium Oxide journal, December 1964

Halogen n-type doping of chalcopyrite semiconductors journal, January 2005

Generalized Gradient Approximation Made Simple journal, October 1996

Oxygen Vacancies as Active Sites for Water Dissociation on Rutile TiO 2 ( 110 ) journal, December 2001

From ultrasoft pseudopotentials to the projector augmented-wave method journal, January 1999

Electron concentration and mobility in In2O3 journal, January 1977

Evidence for surface dipole modifications in In2O3-based transparent conductors journal, June 2008

Hydrogen as a Cause of Doping in Zinc Oxide journal, July 2000

Surface oxygen vacancy origin of electron accumulation in indium oxide journal, June 2011

Ágoston et al. Reply: journal, February 2011

Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral In 2 O 3 journal, May 2009

Surface structure of Sn-doped In 2 O 3 (111) thin films by STM journal, December 2008

Assessment of correction methods for the band-gap problem and for finite-size effects in supercell defect calculations: Case studies for ZnO and GaAs journal, December 2008

Intrinsic defects on a TiO2(110)(1×1) surface and their reaction with oxygen: a scanning tunneling microscopy study journal, August 1998

Intrinsic n -Type Behavior in Transparent Conducting Oxides: A Comparative Hybrid-Functional Study of In 2 O 3 , SnO 2 , and ZnO journal, December 2009

Dopability, Intrinsic Conductivity, and Nonstoichiometry of Transparent Conducting Oxides journal, January 2007

The high temperature behavior of In2O3 journal, March 1975

Electrical Properties of Single Crystals of Indium Oxide journal, September 1962

Rich Variety of Defects in ZnO via an Attractive Interaction between O Vacancies and Zn Interstitials: Origin of n -Type Doping journal, February 2009

Hydrogen doping in indium oxide: An ab initio study journal, November 2009

Semiconductor thermochemistry in density functional calculations journal, December 2008

Evidence for Native-Defect Donors in n -Type ZnO journal, November 2005

Magnetic interactions of Cr − Cr and Co − Co impurity pairs in ZnO within a band-gap corrected density functional approach journal, June 2008

Electrical properties and defect model of tin-doped indium oxide layers journal, April 1982

Many-body G W calculation of the oxygen vacancy in ZnO journal, March 2010

Variable-Temperature Electrical Measurements of Zinc Oxide/Tin Oxide-Cosubstituted Indium Oxide journal, January 2002

Comment on “Intrinsic n -type Behavior in Transparent Conducting Oxides: A Comparative Hybrid-Functional Study of In 2 O 3 , SnO 2 , and ZnO” journal, February 2011

Defect structure studies of bulk and nano-indium-tin oxide journal, October 2004

Title: Surface Origin of High Conductivities in Undoped In₂O₃ Thin Films

Magnetoresistance of Single Crystals of Indium Oxide
journal, December 1964

Halogen n-type doping of chalcopyrite semiconductors
journal, January 2005

Generalized Gradient Approximation Made Simple
journal, October 1996

Oxygen Vacancies as Active Sites for Water Dissociation on Rutile ${TiO}_{2} (110)$
journal, December 2001

From ultrasoft pseudopotentials to the projector augmented-wave method
journal, January 1999

Electron concentration and mobility in In2O3
journal, January 1977

Evidence for surface dipole modifications in In2O3-based transparent conductors
journal, June 2008

Hydrogen as a Cause of Doping in Zinc Oxide
journal, July 2000

Surface oxygen vacancy origin of electron accumulation in indium oxide
journal, June 2011

Ágoston et al. Reply:
journal, February 2011

Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral ${In}_{2} O_{3}$
journal, May 2009

Surface structure of Sn-doped In ₂ O ₃ (111) thin films by STM
journal, December 2008

Assessment of correction methods for the band-gap problem and for finite-size effects in supercell defect calculations: Case studies for ZnO and GaAs
journal, December 2008

Intrinsic defects on a TiO2(110)(1×1) surface and their reaction with oxygen: a scanning tunneling microscopy study
journal, August 1998

Intrinsic $n$ -Type Behavior in Transparent Conducting Oxides: A Comparative Hybrid-Functional Study of ${In}_{2} O_{3}$ , ${SnO}_{2}$ , and ZnO
journal, December 2009

Dopability, Intrinsic Conductivity, and Nonstoichiometry of Transparent Conducting Oxides
journal, January 2007

The high temperature behavior of In2O3
journal, March 1975

Electrical Properties of Single Crystals of Indium Oxide
journal, September 1962

Rich Variety of Defects in ZnO via an Attractive Interaction between O Vacancies and Zn Interstitials: Origin of $n$ -Type Doping
journal, February 2009

Hydrogen doping in indium oxide: An ab initio study
journal, November 2009

Semiconductor thermochemistry in density functional calculations
journal, December 2008

Evidence for Native-Defect Donors in $n$ -Type ZnO
journal, November 2005

Magnetic interactions of $Cr − Cr$ and $Co − Co$ impurity pairs in $ZnO$ within a band-gap corrected density functional approach
journal, June 2008

Electrical properties and defect model of tin-doped indium oxide layers
journal, April 1982

Many-body $G W$ calculation of the oxygen vacancy in ZnO
journal, March 2010

Variable-Temperature Electrical Measurements of Zinc Oxide/Tin Oxide-Cosubstituted Indium Oxide
journal, January 2002

Comment on “Intrinsic $n$ -type Behavior in Transparent Conducting Oxides: A Comparative Hybrid-Functional Study of ${In}_{2} O_{3}$ , ${SnO}_{2}$ , and ZnO”
journal, February 2011

Defect structure studies of bulk and nano-indium-tin oxide
journal, October 2004