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Title: Ordered Semiconducting Nitrogen-Graphene Alloys

Authors:
; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1074770
Resource Type:
Published Article
Journal Name:
Physical Review X
Additional Journal Information:
Journal Name: Physical Review X Journal Volume: 2 Journal Issue: 1; Journal ID: ISSN 2160-3308
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Xiang, H. J., Huang, B., Li, Z. Y., Wei, S. -H., Yang, J. L., and Gong, X. G. Ordered Semiconducting Nitrogen-Graphene Alloys. United States: N. p., 2012. Web. doi:10.1103/PhysRevX.2.011003.
Xiang, H. J., Huang, B., Li, Z. Y., Wei, S. -H., Yang, J. L., & Gong, X. G. Ordered Semiconducting Nitrogen-Graphene Alloys. United States. doi:10.1103/PhysRevX.2.011003.
Xiang, H. J., Huang, B., Li, Z. Y., Wei, S. -H., Yang, J. L., and Gong, X. G. Wed . "Ordered Semiconducting Nitrogen-Graphene Alloys". United States. doi:10.1103/PhysRevX.2.011003.
@article{osti_1074770,
title = {Ordered Semiconducting Nitrogen-Graphene Alloys},
author = {Xiang, H. J. and Huang, B. and Li, Z. Y. and Wei, S. -H. and Yang, J. L. and Gong, X. G.},
abstractNote = {},
doi = {10.1103/PhysRevX.2.011003},
journal = {Physical Review X},
number = 1,
volume = 2,
place = {United States},
year = {2012},
month = {1}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevX.2.011003

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