Document Details
PURL
Title:
SILICON SEMICONDUCTOR NEUTRON DOSIMETER
Author(s):
Subject Terms:
NEUTRONS - DETECTION AND MEASUREMENTRADIATION AND RADIATION PROTECTIONRADIATION DETECTION INSTRUMENTSSEMICONDUCTORS
Document Location:
DOE Public Reading Room - Hanford Battelle P.O. Box 999 MS H2-53 Richland WA 99352 (509)372-7443
Document Type:
REPORT
Publication Date:
1962 Jun 04
Declassification Status:
Declassified
Document Pages:
18
Accession Number:
RL-1-381859
Document Number(s):
HW-SA-2624
Originating Research Org.:
GE - HAPO
OpenNet Entry Date:
2004 Feb 24
OpenNet Modified Date:
2015 Jul 14
Description/Abstract:
DIODES WITH BASE THICKNESS OF 0.030-0.100 IN HAVE BEEN STUDIED TO MEASURE THE SENSITIVITY AND DETECTION LIMIT AS A FUNCTION OF NEUTRON ENERGY AND THICKNESS OF THE BASE, ALSO TO MEASURE ANNEALING OF NEUTRON DAMAGE, AND DIODE SENSITIVITY TO GAMMA RADIATION.