Document Details

Characteristics and Development Report for the SA 1111 Silicon Diode
Glaze, E W [Organization 1433]
Document Type:
Publication Date:
1965 Sep 01
Document Pages:
45 p.
Document Number(s):
SC-DR-65-0377; ALSNL199800001661
Originating Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
OpenNet Entry Date:
1999 Sep 28
OpenNet Modified Date:
1999 Sep 28
The SA1111 was developed for use in the MC1591 eleven-pack and was used in the DARF radar. It is a general-purpose, 300-volt minimum, PIV diode intended for use in applications requiring radiation tolerance to 10 to the 15th power nvt.

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