National Library of Energy BETA

Sample records for wa namibia sb

  1. Bicon Namibia Consulting Engineers | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    Name: Bicon Namibia Consulting Engineers Place: Windhoek, Namibia Sector: Wind energy Product: Windhoek-based engineering consultancy firm. Provides design and supervision of...

  2. Namibia: Energy Resources | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    Unexpected > operator. SWERA logo.png SWERA View the Solar and Wind Energy Resource Atlas for Namibia. 5 Programs Namibia-UNEP Green Economy Advisory Services National Action...

  3. Namibia | National Nuclear Security Administration

    National Nuclear Security Administration (NNSA)

    Namibia NNSA Supports IAEA Regional Training in Zambia on Management Practices for Uranium The International Atomic Energy Agency (IAEA), European Commission and National Nuclear Security Administration (NNSA) co-sponsored a training course in Livingstone, Zambia this week focusing on good management practices for uranium ore concentrate (UOC). The Zambia Radiation Protection Authority

  4. BayWa Group | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    BayWa Group Jump to: navigation, search Name: BayWa Group Place: Munich, Germany Zip: 81925 Sector: Services, Solar Product: Germany-based company with international operations...

  5. Category:Seattle, WA | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    Seattle, WA Jump to: navigation, search Go Back to PV Economics By Location Media in category "Seattle, WA" The following 16 files are in this category, out of 16 total....

  6. MHK Projects/GPP Namibia | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    Namibia utility, GPP (subsidiary of Southern African Utility SELCo), for a 1.5 MW unit. Once this unit reaches its agreed performance criteria, it will be followed by a further 10...

  7. SB 1149 Schools Program

    Office of Energy Efficiency and Renewable Energy (EERE)

    Oregon's retail electricity restructuring law, SB 1149, includes a requirement for the state's two largest utilities, Pacific Power and Portland General Electric, to collect a 3% public purpose...

  8. Advance Patent Waiver W(A)2002-023 | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    2-023 Advance Patent Waiver W(A)2002-023 Advance Patent Waiver W(A)2002-023 (1.52 MB) More Documents & Publications Advance Patent Waiver W(A)2006-028 WA05056IBMWATSONRESEARCH...

  9. Hanford, WA Selected as Plutonium Production Facility | National Nuclear

    National Nuclear Security Administration (NNSA)

    Security Administration | (NNSA) Hanford, WA Selected as Plutonium Production Facility Hanford, WA Selected as Plutonium Production Facility Hanford, WA Groves selects Hanford, Washington, as site for full-scale plutonium production and separation facilities. Three reactors--B, D, and F--are built

  10. Recent results from CERN-WA98

    SciTech Connect (OSTI)

    Stankus, P.; WA98 Collaboration

    1997-02-01

    The CERN experiment WA98 is a general-survey, open-spectrometer experiment designed to examine 160 A GeV/c Pb+A collisions at the CERN-SPS. The experiment has a broad physics agenda, as suggested by its many different subsystems. A diagram of the experiment as it stood in 1995 is shown in the report. Detectors whose results are presented here are described briefly.

  11. RAPID/Roadmap/12-WA-b | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    Geothermal Hydropower Solar Tools Contribute Contact Us State Trust Lands Habitat Conservation Plan Compliance (12-WA-b) The State of Washington has a Habitat Conservation Plan...

  12. RAPID/Roadmap/19-WA-e | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    Permitting Information Desktop Toolkit BETA About Bulk Transmission Geothermal Hydropower Solar Tools Contribute Contact Us Water Well Notice of Intent for New Well (19-WA-e) A...

  13. RAPID/Roadmap/11-WA-b | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    Permitting Information Desktop Toolkit BETA About Bulk Transmission Geothermal Hydropower Solar Tools Contribute Contact Us Human Remains Process (11-WA-b) This flowchart...

  14. RAPID/Roadmap/18-WA-b | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    Transmission Geothermal Hydropower Solar Tools Contribute Contact Us Dangerous Solid Waste Permit (18-WA-b) The Washington State Department of Ecology (WSDE) oversees the...

  15. RAPID/Roadmap/15-WA-a | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    BETA About Bulk Transmission Geothermal Hydropower Solar Tools Contribute Contact Us Air Quality Permit - Notice of Construction Permit (15-WA-a) This flowchart illustrates...

  16. RAPID/Roadmap/15-WA-b | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    BETA About Bulk Transmission Geothermal Hydropower Solar Tools Contribute Contact Us Air Quality Permit - Operating Permit (15-WA-b) This flowchart illustrates the process for...

  17. RAPID/Roadmap/14-WA-b | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    RAPIDRoadmap14-WA-b < RAPID | Roadmap Jump to: navigation, search RAPID Regulatory and Permitting Information Desktop Toolkit BETA About Bulk Transmission Geothermal...

  18. RAPID/Roadmap/14-WA-c | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    Geothermal Hydropower Solar Tools Contribute Contact Us Underground Injection Control Permit (14-WA-c) The Safe Drinking Water Act requires Washington to implement...

  19. RAPID/Roadmap/19-WA-d | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    BETA About Bulk Transmission Geothermal Hydropower Solar Tools Contribute Contact Us Water Conservancy Board Transfer or Change of Water Right (19-WA-d) In 1997, the Washington...

  20. RAPID/Roadmap/19-WA-c | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    Geothermal Hydropower Solar Tools Contribute Contact Us Transfer or Change of Water Right (19-WA-c) Much of Washington's public waters have been accounted for through...

  1. RAPID/Roadmap/19-WA-b | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    About Bulk Transmission Geothermal Hydropower Solar Tools Contribute Contact Us New Water Right Permit Process (19-WA-b) Washington uses a prior appropriation system for the...

  2. Microsoft Word - WA Parish_MAP_Final.docx

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    and compression system at Unit 8 of the existing W.A. ... subject of a mitigation commitment. (b) In certain ... systems to produce electricity at greater efficiencies, ...

  3. RAPID/Roadmap/5-WA-a | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    Geothermal Hydropower Solar Tools Contribute Contact Us Drilling and Well Development (5-WA-a) In Washington geothermal drilling and well development are regulated by the...

  4. Advance Patent Waiver W(A)2011-006 | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    1-006 Advance Patent Waiver W(A)2011-006 This document waives certain patent rights the ... W(A)2011-006 (218.72 KB) More Documents & Publications WA05022DOWCHEMICALCOMPANYWaiv...

  5. Advance Patent Waiver W(A)2011-039 | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    39 Advance Patent Waiver W(A)2011-039 This document waives certain patent rights the ... W(A)2011-039 (693.45 KB) More Documents & Publications Advance Patent Waiver W(A)2008-033 ...

  6. DOE Zero Energy Ready Home Case Study: TC Legend, Seattle, WA...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Legend, Seattle, WA, Custom Home DOE Zero Energy Ready Home Case Study: TC Legend, Seattle, WA, Custom Home Case study of a DOE Zero Energy Ready Home in Seattle, WA, that scored ...

  7. DOE - Office of Legacy Management -- Hanford Engineer Works - WA 01

    Office of Legacy Management (LM)

    Hanford Engineer Works - WA 01 FUSRAP Considered Sites Site: Hanford Engineer Works (WA.01 ) Designated Name: Alternate Name: Location: Evaluation Year: Site Operations: Site Disposition: Radioactive Materials Handled: Primary Radioactive Materials Handled: Radiological Survey(s): Site Status: Also see http://www.hanford.gov/ Documents Related to Hanford Engineer Works

  8. RAPID/Roadmap/19-WA-a | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    BETA About Bulk Transmission Geothermal Hydropower Solar Tools Contribute Contact Us Water Access and Water Rights Overview (19-WA-a) Pursuant to RCW 78.60.060, developers that...

  9. BayWa Sunways JV | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    JV that specialises in developing, planning and realizing medium-sized to large photovoltaic systems and solar plants. References: BayWa & Sunways JV1 This article is a stub....

  10. RAPID/Roadmap/6-WA-a | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    in the Washington Administrative Code. 6-WA-a - Oversize-Overweight Load Permit.pdf Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number...

  11. RAPID/Roadmap/3-WA-b | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    the Washington State Department of Natural Resources. 3-WA-b - Land Access Overview.pdf Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number...

  12. WA_1994_003_GOLDEN_PHOTOCON_INC_Waiver_of_Domestic_and_Forei.pdf |

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Department of Energy WA_1994_003_GOLDEN_PHOTOCON_INC_Waiver_of_Domestic_and_Forei.pdf WA_1994_003_GOLDEN_PHOTOCON_INC_Waiver_of_Domestic_and_Forei.pdf (5.62 MB) More Documents & Publications WA_1995_030_GOLDEN_PHOTON_INC_Waiver_of_Domestic_and_Foreign.pdf WA_1993_033_GOLDEN_PHOTON_INC_Waiver_of_Domestic_and_Foreign.pdf WA_03_010_SHELL_SOLAR_INDUSTRIES_Waiver_of_Domestic_and_Fore.pdf

  13. DOE - Office of Legacy Management -- University of Washington - WA 0-01

    Office of Legacy Management (LM)

    Washington - WA 0-01 FUSRAP Considered Sites Site: UNIVERSITY OF WASHINGTON (WA.0-01) Eliminated from further consideration under FUSRAP Designated Name: Not Designated Alternate Name: None Location: Seattle , Washington WA.0-01-1 Evaluation Year: 1987 WA.0-01-1 Site Operations: Research activities involving small quantities of radioactive materials in a controlled environment. WA.0-01-1 Site Disposition: Eliminated - Potential for residual radioactive contamination considered remote - Operating

  14. CRAD, NNSA- Safety Basis (SB)

    Energy.gov [DOE]

    CRAD for Safety Basis (SB). Criteria Review and Approach Documents (CRADs) that can be used to conduct a well-organized and thorough assessment of elements of safety and health programs.

  15. Climate Action Champions: Seattle, WA | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Seattle, WA Climate Action Champions: Seattle, WA The City of Seattle has long been at the leading edge of environmental innovation. Seattle has been recycling for over 25 years and today has one of the highest recycling and composting rates nationwide. In 2005, Seattle City Light became the first electric utility in the nation to be carbon neutral. Recently, Seattle was recognized as the “most sustainable city in the nation” by STAR communities with a 5-STAR rating and the highest

  16. Sumas, WA Liquefied Natural Gas Imports (Million Cubic Feet)

    U.S. Energy Information Administration (EIA) (indexed site)

    (Million Cubic Feet) Sumas, WA Liquefied Natural Gas Imports (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2014 5 2015 4 4 2 1 2016 1 2 1 2 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 08/31/2016 Next Release Date: 09/30/2016 Referring Pages: U.S. Liquefied Natural Gas Imports by Point of Entry Sumas, WA LNG Imports from All Countries

  17. File:06-WA-b - Washington Construction Storm Water Permit.pdf...

    Open Energy Information (Open El) [EERE & EIA]

    6-WA-b - Washington Construction Storm Water Permit.pdf Jump to: navigation, search File File history File usage Metadata File:06-WA-b - Washington Construction Storm Water...

  18. Advance Patent Waiver W(A)2013-011 | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    1 Advance Patent Waiver W(A)2013-011 This document waives certain patent rights the ... Advance Patent Waiver W(A)2013-011 (996.94 KB) More Documents & Publications Advance ...

  19. Advance Patent Waiver W(A)2010-028 | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    28 Advance Patent Waiver W(A)2010-028 This document waives certain patent rights the ... Advance Patent Waiver W(A)2010-028 (192.16 KB) More Documents & Publications Advance ...

  20. Advance Patent Waiver W(A)2009-030 | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    9-030 Advance Patent Waiver W(A)2009-030 This document waives certain patent rights the ... Advance Patent Waiver W(A)2009-030 (176.3 KB) More Documents & Publications ...

  1. Advance Patent Waiver W(A)2008-006 | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    8-006 Advance Patent Waiver W(A)2008-006 This document waives certain patent rights the ... Advance Patent Waiver W(A)2008-006 (216.42 KB) More Documents & Publications ...

  2. Advance Patent Waiver W(A)2011-034 | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    1-034 Advance Patent Waiver W(A)2011-034 This document waives certain patent rights the ... Advance Patent Waiver W(A)2011-034 (236.89 KB) More Documents & Publications Advance ...

  3. Advance Patent Waiver W(A)2012-034 | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    34 Advance Patent Waiver W(A)2012-034 This document waives certain patent rights the ... Advance Patent Waiver W(A)2012-034 (1.07 MB) More Documents & Publications Advance Patent ...

  4. Advance Patent Waiver W(A)2009-055 | Department of Energy

    Energy.gov (indexed) [DOE]

    serves the interests of the United States and the general public. Advance Patent Waiver W(A)2009-055 (232.19 KB) More Documents & Publications WA03026EIDUPONTDENEMOURSWaiver...

  5. Advance Patent Waiver W(A)2006-028 | Department of Energy

    Energy.gov (indexed) [DOE]

    and the general public. Advance Patent Waiver W(A)2006-028 (614.91 KB) More Documents & Publications Advance Patent Waiver W(A)2005-048 2011INCITEFactSheets.pdf Advance ...

  6. Advance Patent Waiver W(A)2010-017 | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    17 Advance Patent Waiver W(A)2010-017 This document waives certain patent rights the ... Advance Patent Waiver W(A)2010-017 (203.28 KB) More Documents & Publications Advance ...

  7. Advance Patent Waiver W(A)2010-038 | Department of Energy

    Energy.gov (indexed) [DOE]

    serves the interests of the United States and the general public. Advance Patent Waiver W(A)2010-038 (295.5 KB) More Documents & Publications Advance Patent Waiver W(A)2010-037

  8. Advance Patent Waiver W(A)2010-037 | Department of Energy

    Energy.gov (indexed) [DOE]

    serves the interests of the United States and the general public. Advance Patent Waiver W(A)2010-037 (236.64 KB) More Documents & Publications Advance Patent Waiver W(A)2010-038

  9. Mechanism of somatic hypermutation at the WA motif by human DNA...

    Office of Scientific and Technical Information (OSTI)

    at the WA motif by human DNA polymerase eta Citation Details In-Document Search Title: Mechanism of somatic hypermutation at the WA motif by human DNA polymerase eta Authors: ...

  10. WA_00_022_CARGILL_DOW_POLYMERS_LLC_Waiver_of_Domestic_and_Fo.pdf |

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Department of Energy 22_CARGILL_DOW_POLYMERS_LLC_Waiver_of_Domestic_and_Fo.pdf WA_00_022_CARGILL_DOW_POLYMERS_LLC_Waiver_of_Domestic_and_Fo.pdf (1.38 MB) More Documents & Publications WA_04_033_CARGILL_Waiver_of_Patent_Rights_to_CARGILL_DOWN_L.pdf WA_03_029_CARGILL_DOW_LLC_Waiver_of_Domestic_and_Foreign_Pat.pdf WA_02_052_CARGILL_DOW_Waiver_of_Domestic_and_Foreign_Patent_

  11. WA_01_018_IBM_Waiver_of_Governement_US_and_Foreign_Patent_Ri.pdf |

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Department of Energy 1_018_IBM_Waiver_of_Governement_US_and_Foreign_Patent_Ri.pdf WA_01_018_IBM_Waiver_of_Governement_US_and_Foreign_Patent_Ri.pdf (18.1 MB) More Documents & Publications WA_04_053_IBM_CORP_Waiver_of_the_Government_U.S._and_Foreign.pdf WA_00_015_COMPAQ_FEDERAL_LLC_Waiver_Domestic_and_Foreign_Pat.pdf Advance Patent Waiver W(A)2002-023

  12. WA_03_010_SHELL_SOLAR_INDUSTRIES_Waiver_of_Domestic_and_Fore.pdf |

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Department of Energy 10_SHELL_SOLAR_INDUSTRIES_Waiver_of_Domestic_and_Fore.pdf WA_03_010_SHELL_SOLAR_INDUSTRIES_Waiver_of_Domestic_and_Fore.pdf (1.41 MB) More Documents & Publications WA_02_039_SHELL_SOLAR_SYSTEMS_Waiver_of_Patent_Rights_Under_.pdf WA_05_059_SHELL_SOLAR_INDUSTRIES_LP_Waiver_of_Domestic_and_F.pdf Advance Patent Waiver W(A)2005-060

  13. WA_03_040_UNITED_TECHNOLOGIES_RESEARCH_CENTER_Waiver_of_Dome.pdf |

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Department of Energy 40_UNITED_TECHNOLOGIES_RESEARCH_CENTER_Waiver_of_Dome.pdf WA_03_040_UNITED_TECHNOLOGIES_RESEARCH_CENTER_Waiver_of_Dome.pdf (705.58 KB) More Documents & Publications WA_02_054_ADVANCED_TECHNLOGY_MATERIALS_Waiver_of_Domestic_an.pdf WA_02_038_UNITED_TECHNOLOGIES_CORP_Waiver_of_Domestic_and_Fo.pdf Advance Patent Waiver W(A)2006-021

  14. WA_04_047_CATERPILLAR_INC_Waiver_of_Patent_Rights_to_Inventi.pdf |

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Department of Energy 47_CATERPILLAR_INC_Waiver_of_Patent_Rights_to_Inventi.pdf WA_04_047_CATERPILLAR_INC_Waiver_of_Patent_Rights_to_Inventi.pdf (607.19 KB) More Documents & Publications WA_04_046_CATERPILLAR_INC_Waiver_of_Patent_Rights_to_Inventi.pdf WA_04_071_CATERPILLAR_INC_Waiver_of_Patent_Rights_to_Inventi.pdf Advance Patent Waiver W(A)2005-052

  15. WA_04_069__EATON_CORPORATION_Waiver_of_Domestic_and_Foreign_.pdf |

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Department of Energy 4_069__EATON_CORPORATION_Waiver_of_Domestic_and_Foreign_.pdf WA_04_069__EATON_CORPORATION_Waiver_of_Domestic_and_Foreign_.pdf (691.53 KB) More Documents & Publications WA_04_059_EATON_CORPORATION_Waiver_of_Patent_Rights_Under_a_.pdf WA_02_048_EATON_CORPORATION_Waviver_of_Patent_Rights_Under_A.pdf WA_04_074_EATON_CORPORATION_Waiver_of_Domestic_and_Foreign_I

  16. WA_06_016_BP_SOLAR_INTERNATIONAL_Waiver_of_Patent_Rights_Und.pdf |

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Department of Energy 6_016_BP_SOLAR_INTERNATIONAL_Waiver_of_Patent_Rights_Und.pdf WA_06_016_BP_SOLAR_INTERNATIONAL_Waiver_of_Patent_Rights_Und.pdf (1.22 MB) More Documents & Publications WA_07_016_OSRAM_SYLVANIA_Waiver_of_Patent_Rights_Under_a_DOE.pdf Advance Patent Waiver W(A)2005-060 WA_02_035_BP_SOLAR_INTERNATIONAL_Waiver_of_Domestic_and_Fore

  17. WA_02_036_DE_NORA_NORTH_AMERICA_Waiver_of_Domestic_and_Foreg...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    6DENORANORTHAMERICAWaiverofDomesticandForeg.pdf WA02036DENORANORTHAMERICAWaiverofDomesticandForeg.pdf (778.5 KB) More Documents & Publications ...

  18. EIS-0397: Lyle Falls Fish Passage Project, WA

    Energy.gov [DOE]

    This EIS analyzes BPA's decision to modify funding to the existing Lyle Falls Fishway on the lower Klickitat River in Klickitat County, WA. The proposed project would help BPA meet its off-site mitigation responsibilities for anadromous fish affected by the development of the Federal Columbia River Power System and increase overall fish production in the Columbia Basin.

  19. DWPF SB6 INITIAL CPC FLOWSHEET TESTING SB6-1 TO SB6-4L TESTS OF SB6-A AND SB6-B SIMULANTS

    SciTech Connect (OSTI)

    Lambert, D.; Pickenheim, B.; Best, D.

    2009-09-09

    The Defense Waste Processing Facility (DWPF) will transition from Sludge Batch 5 (SB5) processing to Sludge Batch 6 (SB6) processing in late fiscal year 2010. Tests were conducted using non-radioactive simulants of the expected SB6 composition to determine the impact of varying the acid stoichiometry during the Sludge Receipt and Adjustment Tank (SRAT) and Slurry Mix Evaporator (SME) processes. The work was conducted to meet the Technical Task Request (TTR) HLW/DWPF/TTR-2008-0043, Rev.0 and followed the guidelines of a Task Technical and Quality Assurance Plan (TT&QAP). The flowsheet studies are performed to evaluate the potential chemical processing issues, hydrogen generation rates, and process slurry rheological properties as a function of acid stoichiometry. These studies were conducted with the estimated SB6 composition at the time of the study. This composition assumed a blend of 101,085 kg of Tank 4 insoluble solids and 179,000 kg of Tank 12 insoluble solids. The current plans are to subject Tank 12 sludge to aluminum dissolution. Liquid Waste Operations assumed that 75% of the aluminum would be dissolved during this process. After dissolution and blending of Tank 4 sludge slurry, plans included washing the contents of Tank 51 to {approx}1M Na. After the completion of washing, the plan assumes that 40 inches on Tank 40 slurry would remain for blending with the qualified SB6 material. There are several parameters that are noteworthy concerning SB6 sludge: (1) This is the second batch DWPF will be processing that contains sludge that has had a significant fraction of aluminum removed through aluminum dissolution; (2) The sludge is high in mercury, but the projected concentration is lower than SB5; (3) The sludge is high in noble metals, but the projected concentrations are lower than SB5; and(4) The sludge is high in U and Pu - components that are not added in sludge simulants. Six DWPF process simulations were completed in 4-L laboratory-scale equipment using

  20. WA_00_015_COMPAQ_FEDERAL_LLC_Waiver_Domestic_and_Foreign_Pat.pdf |

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Department of Energy 15_COMPAQ_FEDERAL_LLC_Waiver_Domestic_and_Foreign_Pat.pdf WA_00_015_COMPAQ_FEDERAL_LLC_Waiver_Domestic_and_Foreign_Pat.pdf (1.8 MB) More Documents & Publications WA_01_018_IBM_Waiver_of_Governement_US_and_Foreign_Patent_Ri.pdf Advance Patent Waiver W(A)2002-023 WC_1997_004_CLASS_ADVANCE_WAIVER_Under_Domestic_First_and_Se

  1. WA_02_034_BP_SOLAR_INTERNATIONAL_LLC_Waiver_of_Domestic_and_.pdf |

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Department of Energy 4_BP_SOLAR_INTERNATIONAL_LLC_Waiver_of_Domestic_and_.pdf WA_02_034_BP_SOLAR_INTERNATIONAL_LLC_Waiver_of_Domestic_and_.pdf (734.86 KB) More Documents & Publications WA_02_035_BP_SOLAR_INTERNATIONAL_Waiver_of_Domestic_and_Fore.pdf WA_06_016_BP_SOLAR_INTERNATIONAL_Waiver_of_Patent_Rights_Und

  2. WA_02_035_BP_SOLAR_INTERNATIONAL_Waiver_of_Domestic_and_Fore.pdf |

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Department of Energy 5_BP_SOLAR_INTERNATIONAL_Waiver_of_Domestic_and_Fore.pdf WA_02_035_BP_SOLAR_INTERNATIONAL_Waiver_of_Domestic_and_Fore.pdf (1.18 MB) More Documents & Publications WA_06_016_BP_SOLAR_INTERNATIONAL_Waiver_of_Patent_Rights_Und.pdf WA_02_034_BP_SOLAR_INTERNATIONAL_LLC_Waiver_of_Domestic_and_

  3. WA_1993_033_GOLDEN_PHOTON_INC_Waiver_of_Domestic_and_Foreign.pdf |

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Department of Energy 3_033_GOLDEN_PHOTON_INC_Waiver_of_Domestic_and_Foreign.pdf WA_1993_033_GOLDEN_PHOTON_INC_Waiver_of_Domestic_and_Foreign.pdf (1.15 MB) More Documents & Publications WA_1995_030_GOLDEN_PHOTON_INC_Waiver_of_Domestic_and_Foreign.pdf WA_1994_003_GOLDEN_PHOTOCON_INC_Waiver_of_Domestic_and_Forei

  4. WA_1995_030_GOLDEN_PHOTON_INC_Waiver_of_Domestic_and_Foreign.pdf |

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Department of Energy 5_030_GOLDEN_PHOTON_INC_Waiver_of_Domestic_and_Foreign.pdf WA_1995_030_GOLDEN_PHOTON_INC_Waiver_of_Domestic_and_Foreign.pdf (8.82 MB) More Documents & Publications WA_1994_003_GOLDEN_PHOTOCON_INC_Waiver_of_Domestic_and_Forei.pdf WA_1993_033_GOLDEN_PHOTON_INC_Waiver_of_Domestic_and_Foreign

  5. WA_1995_033_BECHTEL_NEVADA_CORPORATION_OR_FCI_ENVIRONMENTAL_.pdf |

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Department of Energy 3_BECHTEL_NEVADA_CORPORATION_OR_FCI_ENVIRONMENTAL_.pdf WA_1995_033_BECHTEL_NEVADA_CORPORATION_OR_FCI_ENVIRONMENTAL_.pdf (3.94 MB) More Documents & Publications WA_1993_015_XSIRIUS_INC_Waiver_of_the_Governments_US_and_.pdf Advance Patent Waiver W(A)2012-030 Identified Patent Waiver W(I)2008-008

  6. WA_98_001_REYNOLDS_METALS_COMPANY_Waiver_of_Domestic_and_For.pdf |

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Department of Energy 8_001_REYNOLDS_METALS_COMPANY_Waiver_of_Domestic_and_For.pdf WA_98_001_REYNOLDS_METALS_COMPANY_Waiver_of_Domestic_and_For.pdf (1.1 MB) More Documents & Publications Advance Patent Waiver W(A)1998-014 WA_00_023_ALCOA_INC_Waiver_of_Domestic_and_Foreign_Patent_Ri.pdf U.S. Energy Requirements for Aluminum Production

  7. Scavenging Elemental Sb Through Addition of NbSb to Mm0.9Fe3...

    Office of Scientific and Technical Information (OSTI)

    Title: Scavenging Elemental Sb Through Addition of NbSb to Mm0.9Fe3.5Co0.5S12 Skutterudites Authors: Zhang, Long ; Zhou, Chen ; Morelli, Donald T ; Sakamoto, Jeffrey Publication ...

  8. AlGaAsSb/GaSb Distributed Bragg Reflectors Grown by Organometallic Vapor Phase Epitaxy

    SciTech Connect (OSTI)

    C.A. Wang; C.J. Vineis; D.R. Calawa

    2002-02-13

    The first AlGaAsSb/GaSb quarter-wave distributed Bragg reflectors grown by metallic vapor phase epitaxy are reported. The peak reflectance is 96% for a 10-period structure.

  9. New Whole-House Solutions Case Study: Quadrant Homes, Kent, WA

    Energy Savers

    Kentlake Highlands | Kent, WA PROJECT INFORMATION Construction: New home Type: ... hundreds of builders were left sitting on thousands of unsold new homes, but not Quadrant. ...

  10. WA_04_033_CARGILL_Waiver_of_Patent_Rights_to_CARGILL_DOWN_L.pdf |

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Department of Energy 33_CARGILL_Waiver_of_Patent_Rights_to_CARGILL_DOWN_L.pdf WA_04_033_CARGILL_Waiver_of_Patent_Rights_to_CARGILL_DOWN_L.pdf (1.05 MB) More Documents & Publications WA_00_022_CARGILL_DOW_POLYMERS_LLC_Waiver_of_Domestic_and_Fo.pdf WA_05_022_DOW_CHEMICAL_COMPANY_Waiver_of_domestic_and_Foreig.pdf WA_03_029_CARGILL_DOW_LLC_Waiver_of_Domestic_and_Foreign_Pat.pdf

  11. DOE Zero Energy Ready Home Case Study: TC Legend Homes, Bellingham, WA |

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Department of Energy Bellingham, WA DOE Zero Energy Ready Home Case Study: TC Legend Homes, Bellingham, WA DOE Zero Energy Ready Home Case Study: TC Legend Homes, Bellingham, WA Case study of a DOE Zero Energy Ready home in Bellingham, WA, that achieves HERS 43 without PV or HERS 13 with 3.2 kW of PV. The 1,055-ft2 two-story production home has 6-in. SIP walls, a 10-in. SIP roof, and ICF foundation walls with R-20 high-density rigid EPS foam under the slab. A single ductless heat pump heats

  12. Method of making an InAsSb/InAsSbP diode lasers

    DOE Patents [OSTI]

    Razeghi, M.

    1997-08-19

    InAsSb/InAsSbP/InAs Double Heterostructures (DH) and Separate Confinement Heterostructure Multiple Quantum Well (SCH-MQW) structures are taught wherein the ability to tune to a specific wavelength within 3 {micro}m to 5 {micro}m is possible by varying the ratio of As:Sb in the active layer. 9 figs.

  13. Method of making an InAsSb/InAsSbP diode lasers

    DOE Patents [OSTI]

    Razeghi, Manijeh

    1997-01-01

    InAsSb/InAsSbP/InAs Double Heterostructures (DH) and Separate Confinement Heterostructure Multiple Quantum Well (SCH-MQW) structures are taught wherein the ability to tune to a specific wavelength within 3 .mu.m to 5 .mu.m is possible by varying the ratio of As:Sb in the active layer.

  14. (The 1990 run of the WA80 experiment)

    SciTech Connect (OSTI)

    Young, G.R.

    1990-09-18

    The traveler spent six weeks at CERN participating in the 1990 run of the WA80 experiment. The traveler concentrated on trigger electronics for the first two weeks and on operation of the experiment for much of the next four. New electronics designed at ORNL for reading out the new BGO spectrometer were tested with the BGO in beam. Improvements were made, in collaboration with the ORNL engineers who designed the electronics. Plans were made for constructing the electronics in large quantities. Conversations were had with other members of WA80 about the analysis of results from this year's run and our plans for the 1991/1992 runs proposed for CERN. Lengthy conversations were had about the draft of a first paper concerning limits on direct photon production. Finally, the traveler attended an all-day session of the dilepton working group chartered to consider dilepton and photon experiments using heavy-ion beams in CERN's to-be-proposed Large Hadron Collider (LHC). At this meeting the traveler presented recent results from the group working on such a proposal for RHIC and updated his earlier presentation of June 1990 in this working group.

  15. WA_07_040_GRAFTECH_INTERNATIONAL_LTD_Waiver_of_Patent_Rights.pdf |

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Department of Energy 7_040_GRAFTECH_INTERNATIONAL_LTD_Waiver_of_Patent_Rights.pdf WA_07_040_GRAFTECH_INTERNATIONAL_LTD_Waiver_of_Patent_Rights.pdf (904.04 KB) More Documents & Publications Advance Patent Waiver W(A)2008-004 Next Generation Bipolar Plates for Automotive PEM Fuel Cells Specialty Vehicles and Material Handling Equipment

  16. Relation between the magnetization and the electrical properties of alloy GaSb-MnSb films

    SciTech Connect (OSTI)

    Koplak, O. V.; Polyakov, A. A.; Davydov, A. B.; Morgunov, R. B.; Talantsev, A. D.; Kochura, A. V.; Fedorchenko, I. V.; Novodvorskii, O. A.; Parshina, L. S.; Khramova, O. D.; Shorokhova, A. V.; Aronzon, B. A.

    2015-06-15

    The influence of the charge carrier concentration on the magnetic properties of GaSb-MnSb alloys is studied. The ferromagnetism of GaSb-MnSb films is caused by the presence of MnSb granules and manifests itself in both magnetometric measurements and the presence of an anisotropic magnetoresistance and the anomalous Hall effect. Electric conduction is executed by charge carriers (holes) in a GaSb matrix. The magnetization of clusters depends on stoichiometry and the concentration of Mn{sup 2+} and Mn{sup 3+} ions, which is specified by the film growth conditions. At high film growth temperatures, ferromagnetic clusters containing Mn{sup 2+} ions mainly form. At low growth temperatures, an antiferromagnetic phase containing Mn{sup 3+} ions forms.

  17. SbSI nanocrystal formation in AsSbSI glass under laser beam

    SciTech Connect (OSTI)

    Azhniuk, Yu.M.; Stoyka, V.; Petryshynets, I.; Rubish, V.M.; Guranich, O.G.; Gomonnai, A.V.; Zahn, D.R.T.

    2012-06-15

    Highlights: ? AsSbSI glasses are obtained by co-melting of As{sub 2}S{sub 3} and SbSI. ? The glass structure and composition are confirmed by SEM, EDX, and Raman studies. ? Laser-induced crystallization of SbSI from the glass is observed by Raman spectroscopy. -- Abstract: AsSbSI glasses are obtained by co-melting of As{sub 2}S{sub 3} and SbSI in a broad compositional interval. Their structure and composition are confirmed by the studies of scanning electron microscopy, energy dispersive X-ray spectroscopy, and micro-Raman scattering. Laser-induced crystallization of SbSI crystallites from the glass matrix is observed in the course of the micro-Raman measurement as a result of local laser beam heating.

  18. Growth mechanisms of GaSb heteroepitaxial films on Si with an AlSb buffer layer

    SciTech Connect (OSTI)

    Vajargah, S. Hosseini; Botton, G. A.; Brockhouse Institute for Materials Research, McMaster University, Hamilton, Ontario L8S 4M1; Canadian Centre for Electron Microscopy, McMaster University, Hamilton, Ontario L8S 4M1 ; Ghanad-Tavakoli, S.; Preston, J. S.; Kleiman, R. N.; Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7; Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7

    2013-09-21

    The initial growth stages of GaSb epilayers on Si substrates and the role of the AlSb buffer layer were studied by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). Heteroepitaxy of GaSb and AlSb on Si both occur by Volmer-Weber (i.e., island mode) growth. However, the AlSb and GaSb islands have distinctly different characteristics as revealed through an atomic-resolution structural study using Z-contrast of HAADF-STEM imaging. While GaSb islands are sparse and three dimensional, AlSb islands are numerous and flattened. The introduction of 3D island-forming AlSb buffer layer facilitates the nucleation of GaSb islands. The AlSb islands-assisted nucleation of GaSb islands results in the formation of drastically higher quality planar film at a significantly smaller thickness of films. The interface of the AlSb and GaSb epilayers with the Si substrate was further investigated with energy dispersive X-ray spectrometry to elucidate the key role of the AlSb buffer layer in the growth of GaSb epilayers on Si substrates.

  19. DOE Zero Energy Ready Home Case Study: TC Legend Homes, Bellingham, WA

    Energy.gov [DOE]

    Case study of a DOE Zero Energy Ready home in Bellingham, WA, that achieves HERS 43 without PV or HERS 13 with 3.2 kW of PV.

  20. Advance Patent Waiver W(A)2010-041 | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Advance Patent Waiver W(A)2010-041 This document waives certain patent rights the Department of Energy (DOE) has to inventions conceived or first actually reduced to practice by W....

  1. Best Practices Case Study: Devoted Builders, LLC, Mediterrtanean Villas, Pasco,WA

    SciTech Connect (OSTI)

    2010-12-01

    Devoted Builders of Kennewick, WA worked with Building America's BIRA team to achieve the 50% Federal tax credit level energy savings on 81 homes at its Mediterranean Villas community in eastern Washington.

  2. W.A. Parish Post-Combustion CO{sub 2} Capture and Sequestration...

    Office of Scientific and Technical Information (OSTI)

    Title: W.A. Parish Post-Combustion COsub 2 Capture and Sequestration Project Phase 1 ... and reduce its emissions of carbon dioxide (COsub 2) and other greenhouse gases (GHGs). ...

  3. Fisher & Paykel Appliances: ENERGY STAR Referral (WA42T26GW1)

    Energy.gov [DOE]

    DOE referred the matter of Fisher & Paykel Appliances residential clothes washer, model WA42T26GW1, to the EPA for appropriate action after DOE testing showed that the model does not meet the ENERGY STAR specification.

  4. WA_97_027_GENERAL_ATOMICS__CORPORATION_Waiver_of_Domestic_an.pdf |

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Department of Energy 7_027_GENERAL_ATOMICS__CORPORATION_Waiver_of_Domestic_an.pdf WA_97_027_GENERAL_ATOMICS__CORPORATION_Waiver_of_Domestic_an.pdf (8.04 MB) More Documents & Publications WA_99_014_UNITED_SOLAR_SYSTEMS_CORP_Waiver_of_Domestic_and_F.pdf Inspection Report: INS-O-00-02 Class Patent Waiver W(C)2004-001

  5. Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices

    SciTech Connect (OSTI)

    Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J.; Charache, G.W.

    1997-05-01

    The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

  6. DWPF simulant CPC studies for SB8

    SciTech Connect (OSTI)

    Koopman, D. C.; Zamecnik, J. R.

    2013-06-25

    The Savannah River National Laboratory (SRNL) accepted a technical task request (TTR) from Waste Solidification Engineering to perform simulant tests to support the qualification of Sludge Batch 8 (SB8) and to develop the flowsheet for SB8 in the Defense Waste Processing Facility (DWPF). These efforts pertained to the DWPF Chemical Process Cell (CPC). Separate studies were conducted for frit development and glass properties (including REDOX). The SRNL CPC effort had two primary phases divided by the decision to drop Tank 12 from the SB8 constituents. This report focuses on the second phase with SB8 compositions that do not contain the Tank 12 piece. A separate report will document the initial phase of SB8 testing that included Tank 12. The second phase of SB8 studies consisted of two sets of CPC studies. The first study involved CPC testing of an SB8 simulant for Tank 51 to support the CPC demonstration of the washed Tank 51 qualification sample in the SRNL Shielded Cells facility. SB8-Tank 51 was a high iron-low aluminum waste with fairly high mercury and moderate noble metal concentrations. Tank 51 was ultimately washed to about 1.5 M sodium which is the highest wash endpoint since SB3-Tank 51. This study included three simulations of the DWPF Sludge Receipt and Adjustment Tank (SRAT) cycle and Slurry Mix Evaporator (SME) cycle with the sludge-only flowsheet at nominal DWPF processing conditions and three different acid stoichiometries. These runs produced a set of recommendations that were used to guide the successful SRNL qualification SRAT/SME demonstration with actual Tank 51 washed waste. The second study involved five SRAT/SME runs with SB8-Tank 40 simulant. Four of the runs were designed to define the acid requirements for sludge-only processing in DWPF with respect to nitrite destruction and hydrogen generation. The fifth run was an intermediate acid stoichiometry demonstration of the coupled flowsheet for SB8. These runs produced a set of processing

  7. Advance Patent Waiver W(A)2009-058 | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    09-058 Advance Patent Waiver W(A)2009-058 This document waives certain patent rights the Department of Energy (DOE) has to inventions conceived or first actually reduced to practice by SOLAR TURBINES INC under agreement DE-FC26-09NT05873, as the DOE has determined that granting such a waiver best serves the interests of the United States and the general public. Advance Patent Waiver W(A)2009-058 (182.99 KB) More Documents & Publications

  8. Advance Patent Waiver W(A)2010-006 | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    0-006 Advance Patent Waiver W(A)2010-006 This document waives certain patent rights the Department of Energy (DOE) has to inventions conceived or first actually reduced to practice by HYDROGEN ENERGY OF CALIFORNIA under agreement DE-FE0000663, as the DOE has determined that granting such a waiver best serves the interests of the United States and the general public. Advance Patent Waiver W(A)2010-006 (229.05 KB) More Documents & Publications Identified Patent Waiver W(I)2010-006 Identified

  9. Sumas, WA Liquefied Natural Gas Imports from Canada (Million Cubic Feet)

    U.S. Energy Information Administration (EIA) (indexed site)

    from Canada (Million Cubic Feet) Sumas, WA Liquefied Natural Gas Imports from Canada (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2014 5 2015 4 4 2 1 2016 1 2 1 2 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 08/31/2016 Next Release Date: 09/30/2016 Referring Pages: U.S. Liquefied Natural Gas Imports by Point of Entry Sumas, WA LNG Imports from Canada

  10. DOE Zero Energy Ready Home Case Study: Clifton View Homes, Whidbey Island, WA

    Energy.gov [DOE]

    Case study of a DOE Zero Energy Ready home on Whidbey Island, WA, that scores HERS 37 without PV or HERS -13 with 10 kW PV, enough to power the home and an electric car. The two-story custom home...

  11. DWPF Simulant CPC Studies For SB8

    SciTech Connect (OSTI)

    Newell, J. D.

    2013-09-25

    Prior to processing a Sludge Batch (SB) in the Defense Waste Processing Facility (DWPF), flowsheet studies using simulants are performed. Typically, the flowsheet studies are conducted based on projected composition(s). The results from the flowsheet testing are used to 1) guide decisions during sludge batch preparation, 2) serve as a preliminary evaluation of potential processing issues, and 3) provide a basis to support the Shielded Cells qualification runs performed at the Savannah River National Laboratory (SRNL). SB8 was initially projected to be a combination of the Tank 40 heel (Sludge Batch 7b), Tank 13, Tank 12, and the Tank 51 heel. In order to accelerate preparation of SB8, the decision was made to delay the oxalate-rich material from Tank 12 to a future sludge batch. SB8 simulant studies without Tank 12 were reported in a separate report.1 The data presented in this report will be useful when processing future sludge batches containing Tank 12. The wash endpoint target for SB8 was set at a significantly higher sodium concentration to allow acceptable glass compositions at the targeted waste loading. Four non-coupled tests were conducted using simulant representing Tank 40 at 110-146% of the Koopman Minimum Acid requirement. Hydrogen was generated during high acid stoichiometry (146% acid) SRAT testing up to 31% of the DWPF hydrogen limit. SME hydrogen generation reached 48% of of the DWPF limit for the high acid run. Two non-coupled tests were conducted using simulant representing Tank 51 at 110-146% of the Koopman Minimum Acid requirement. Hydrogen was generated during high acid stoichiometry SRAT testing up to 16% of the DWPF limit. SME hydrogen generation reached 49% of the DWPF limit for hydrogen in the SME for the high acid run. Simulant processing was successful using previously established antifoam addition strategy. Foaming during formic acid addition was not observed in any of the runs. Nitrite was destroyed in all runs and no N2O was detected

  12. DOE Zero Energy Ready Home Case Study: TC Legend, Seattle, WA, Custom Home

    Energy.gov [DOE]

    Case study of a DOE Zero Energy Ready Home in Seattle, WA, that scored HERS 37 without PV, HERS -1 with PV. This 1,915-square-foot custom home has SIP walls and roof, R-20 XPS under the slab, triple-pane windows, an air to water heat pump for radiant heat, and balanced ventilation with timer-controlled fans to bring in and exhaust air.

  13. DOE Zero Energy Ready Home Case Study: Clifton View Homes, Coupeville, WA, Systems Home

    Energy.gov [DOE]

    Case-study of a DOE Zero Energy Ready Home on Whidbey Island, WA, that scored HERS 45 without PV. This 2,908-square-foot custom/system home has a SIP roof and walls, R-20 rigid foam under slab, triple-pane windows, ground source heat pump for radiant floor heat, and a unique balanced ventilation system using separate exhaust fans to bring air into and out of home.

  14. DOE Zero Energy Ready Home Case Study: Dwell Development, Seattle, WA, Systems Home

    Energy.gov [DOE]

    Case study of a DOE Zero Energy Ready Home in Seattle, WA, that scored HERS 34 without PV. This 2,000-square-foot system home has R-45 double-stud walls, an unvented flat roof with 2 inches of spray foam plus 18 inches blown cellulose, R-42 XPS under slab, triple-pane windows, and a ductless mini-split heat pump.

  15. HIA 2015 DOE Zero Energy Ready Home Case Study: Dwell Development, Reclaimed Modern, Seattle, WA

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Dwell Development Reclaimed Modern Seattle, WA DOE ZERO ENERGY READY HOME(tm) The U.S. Department of Energy invites home builders across the country to meet the extraordinary levels of excellence and quality specified in DOE's Zero Energy Ready Home program (formerly known as Challenge Home). Every DOE Zero Energy Ready Home starts with ENERGY STAR Certified Homes Version 3.0 for an energy-efficient home built on a solid foundation of building science research. Advanced technologies are designed

  16. DOE Zero Energy Ready Home Case Study 2013: Clifton View Homes, Coupeville, WA

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Clifton View Homes Coupeville, WA BUILDING TECHNOLOGIES OFFICE The U.S. Department of Energy invites home builders across the country to meet the extraordinary levels of excellence and quality specifi ed in DOE's Zero Energy Ready Home program (formerly known as Challenge Home). Every DOE Zero Energy Ready Home starts with ENERGY STAR for Homes Version 3 for an energy-effi cient home built on a solid foundation of building science research. Advanced technologies are designed in to give you

  17. DOE Zero Energy Ready Home Case Study 2013: Dwell Development, Seattle, WA

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Dwell Development Seattle, WA BUILDING TECHNOLOGIES OFFICE The U.S. Department of Energy invites home builders across the country to meet the extraordinary levels of excellence and quality specifi ed in DOE's Zero Energy Ready Home program (formerly known as Challenge Home). Every DOE Zero Energy Ready Home starts with ENERGY STAR for Homes Version 3 for an energy-effi cient home built on a solid foundation of building science research. Advanced technologies are designed in to give you superior

  18. DOE Zero Energy Ready Home Case Study 2013: TC Legend, Seattle, WA

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    TC Legend Homes Seattle, WA BUILDING TECHNOLOGIES OFFICE The U.S. Department of Energy invites home builders across the country to meet the extraordinary levels of excellence and quality specifi ed in DOE's Zero Energy Ready Home program (formerly known as Challenge Home). Every DOE Zero Energy Ready Home starts with ENERGY STAR for Homes Version 3 for an energy-effi cient home built on a solid foundation of building science research. Advanced technologies are designed in to give you superior

  19. Fragile structural transition in Mo3Sb7

    DOE PAGES-Beta [OSTI]

    Yan, Jiaqiang -Q.; McGuire, Michael A; May, Andrew F; Parker, David S.; Mandrus, D. G.; Sales, Brian C.

    2015-01-01

    Mo3Sb7 single crystals lightly doped with Cr, Ru, or Te are studied in order to explore the interplay between superconductivity, magnetism, and the cubic-tetragonal structural transition. The structural transition at 53 K is extremely sensitive to Ru or Te substitution which introduces additional electrons, but robust against Cr substitution. We observed no sign of a structural transition in superconducting Mo2.91Ru0.09Sb7 and Mo3Sb6.975Te0.025. In contrast, 3 at.% Cr doping only slightly suppresses the structural transition to 48 K while leaving no trace of superconductivity above 1.8 K. Analysis of magnetic properties suggests that the interdimer interaction in Mo3Sb7 is near amore » critical value and essential for the structural transition. Futhermore, all dopants suppress the superconductivity of Mo3Sb7. The tetragonal structure is not necessary for superconductivity.« less

  20. The reaction mechanism of SnSb and Sb thin film anodes for Na-ion batteries studied by X-ray diffraction, 119Sn and 121Sb M ssbauer spectroscopies

    DOE PAGES-Beta [OSTI]

    Baggetto, Loic; Hah, Hien-Yoong; Jumas, Dr. Jean-Claude; Johnson, Prof. Dr. Charles E.; Johnson, Jackie A.; Keum, Jong Kahk; Bridges, Craig A; Veith, Gabriel M

    2014-01-01

    The electrochemical reaction of Sb and SnSb anode materials with Na results in the formation of amorphous materials. To understand the resulting phases and electrochemical capacities we studied the reaction products local order using 119Sn and 121Sb M ssbauer spectroscopies in conjunction with measurements performed on model powder compounds of Na-Sn and Na-Sb to further clarify the reactions steps. For pure Sb the discharge (sodiation) starts with the formation of an amorphous phase composed of atomic environments similar to those found in NaSb, and proceeds further by the formation of environments similar to that present in Na3Sb. The reversible reactionmore » takes place during a large portion of the charge process. At full charge the anode material still contains a substantial fraction of Na, which explains the lack of recrystallization into crystalline Sb. The reaction of SnSb yields Na3Sb crystalline phase at full discharge at higher temperatures (65 and 95 C) while the room temperature reaction yields amorphous compounds. The electrochemically-driven, solid-state amorphization reaction occurring at room temperature is governed by the simultaneous formation of Na-coordinated Sn and Sb environments, as monitored by the decrease (increase) of the 119Sn (121Sb) M ssbauer isomer shifts. Overall, the monitoring of the hyperfine parameters enables to correlate the changes in Na content to the individual Sn and Sb local chemical environments.« less

  1. The reaction mechanism of SnSb and Sb thin film anodes for Na-ion batteries studied by X-ray diffraction, 119Sn and 121Sb Mössbauer spectroscopies

    DOE PAGES-Beta [OSTI]

    Baggetto, Loïc; Hah, Hien-Yoong; Jumas, Jean-Claude; Johnson, Charles E.; Johnson, Jacqueline A.; Keum, Jong K.; Bridges, Craig A.; Veith, Gabriel M.

    2014-06-01

    The electrochemical reaction of Sb and SnSb anode materials with Na results in the formation of amorphous materials. To understand the resulting phases and electrochemical capacities we studied the reaction products local order using 119Sn and 121Sb Mössbauer spectroscopies in conjunction with measurements performed on model powder compounds of Na-Sn and Na-Sb to further clarify the reactions steps. For pure Sb the discharge (sodiation) starts with the formation of an amorphous phase composed of atomic environments similar to those found in NaSb, and proceeds further by the formation of environments similar to that present in Na3Sb. The reversible reaction takesmore » place during a large portion of the charge process. At full charge the anode material still contains a substantial fraction of Na, which explains the lack of recrystallization into crystalline Sb. The reaction of SnSb yields Na3Sb crystalline phase at full discharge at higher temperatures (65 and 95°C) while the room temperature reaction yields amorphous compounds. The electrochemically-driven, solid-state amorphization reaction occurring at room temperature is governed by the simultaneous formation of Na-coordinated Sn and Sb environments, as monitored by the decrease (increase) of the 119Sn (121Sb) Mössbauer isomer shifts. Overall, the monitoring of the hyperfine parameters enables to correlate the changes in Na content to the individual Sn and Sb local chemical environments.« less

  2. Anisotropic giant magnetoresistance in NbSb?

    SciTech Connect (OSTI)

    Wang, Kefeng [Brookhaven National Lab. (BNL), Upton, NY (United States); Graf, D. [Florida State Univ., Tallahassee, FL (United States); Li, Lijun [Brookhaven National Lab. (BNL), Upton, NY (United States); Wang, Limin [Brookhaven National Lab. (BNL), Upton, NY (United States); Petrovic, C. [Brookhaven National Lab. (BNL), Upton, NY (United States)

    2014-12-05

    We report large transverse magnetoreistance (the magnetoresistant ratio ~ 1.3 10?% in 2 K and 9 T field, and 4.3 10?% in 0.4 K and 32 T field, without saturation) and field-induced metal semiconductor-like transition in NbSb?. Magnetoresistance is significantly suppressed but the metal-semiconductor-like transition persists when the current is along the ac-plane. The sign reversal of the Hall resistivity and Seebeck coefficient in the field, plus the electronic structure reveal the coexistence of a small number of holes with very high mobility and a large number of electrons with low mobility. The large MR is attributed to the change of the Fermi surface induced by the magnetic field in addition to the high mobility metal.

  3. Geology of offshore southern Namibia: Evidence from tectonic and basin-fill modeling based on modern seismic data

    SciTech Connect (OSTI)

    Houghton, M.L.; Peacock, D.N. )

    1993-09-01

    License 2815 is located offshore southern Namibia between Cape Dernberg and the South African border, approximately 50 km east of the 1974 Kudu gas discovery. Interactive workstation modeling of modern two-dimensional seismic data from the License area provides an improved understanding of the geology and tectonic history of this unexplored region. Although presently a broad submarine shelf influenced by late Cretaceous-Tertiary deltaic sedimentation from the Orange River, Interpretation based on modern seismic coverage has resulted in the recognition of a Late Jurassic-Early Cretaceous rift complex associated with the initial opening of the Atlantic Ocean. Geologic modeling suggests that a seismically-identified elongate rift localized along a major westward-dipping bounding fault may contain significant thicknesses of Neocomian( ) clastic sediments. Barremian-Aptian marine flooding of this area followed the rifting episode. Mixed marine and deltaic sedimentation has dominated the region since the middle Aptian. Palinspastic restorations of depth-converted seismic lines have helped to unravel the episodic tectonic history of rifting in this area. Input of geologic parameters, including relative sea level changes and sedimentation rates, has yielded computer-derived basin-fill models, which have in turn been integrated with the local tectonic model to make lithology predictions.

  4. DOE Zero Energy Ready Home Case Study 2014: Clifton View Homes, Leganza Residence, Greenbank, WA

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Leganza Residence, Greenbank, WA DOE ZERO ENERGY READY HOME(tm) CASE STUDY The U.S. Department of Energy invites home builders across the country to meet the extraordinary levels of excellence and quality specified in DOE's Zero Energy Ready Home program (formerly known as Challenge Home). Every DOE Zero Energy Ready Home starts with ENERGY STAR Certified Homes Version 3.0 for an energy-efficient home built on a solid foundation of building science research. Advanced technologies are designed in

  5. DOE Zero Energy Ready Home Case Study 2014: TC Legend Homes, Montlake Modern, Seattle, WA

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Montlake Modern Seattle, WA DOE ZERO ENERGY READY HOME(tm) CASE STUDY The U.S. Department of Energy invites home builders across the country to meet the extraordinary levels of excellence and quality specified in DOE's Zero Energy Ready Home program (formerly known as Challenge Home). Every DOE Zero Energy Ready Home starts with ENERGY STAR Certified Homes Version 3.0 for an energy-efficient home built on a solid foundation of building science research. Advanced technologies are designed in to

  6. DOE Zero Ready Home Case Study: Clifton View Homes, Kaltenbach Residence, Clinton, WA

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Kaltenbach Residence, Clinton, WA DOE ZERO ENERGY READY HOME(tm) The U.S. Department of Energy invites home builders across the country to meet the extraordinary levels of excellence and quality specified in DOE's Zero Energy Ready Home program (formerly known as Challenge Home). Every DOE Zero Energy Ready Home starts with ENERGY STAR Certified Homes Version 3.0 for an energy-efficient home built on a solid foundation of building science research. Advanced technologies are designed in to give

  7. DOE Zero Ready Home Case Study: TC Legend Homes, Cedarwood, Bellingham, WA

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Cedarwood Bellingham, WA DOE ZERO ENERGY READY HOME(tm) The U.S. Department of Energy invites home builders across the country to meet the extraordinary levels of excellence and quality specified in DOE's Zero Energy Ready Home program (formerly known as Challenge Home). Every DOE Zero Energy Ready Home starts with ENERGY STAR Certified Homes Version 3.0 for an energy-efficient home built on a solid foundation of building science research. Advanced technologies are designed in to give you

  8. Enhanced optical property in quaternary GaInAsSb/AlGaAsSb quantum wells

    SciTech Connect (OSTI)

    Lin, Chien-Hung Lee, Chien-Ping

    2014-10-21

    High quality GaInAsSb/AlGaAsSb quantum wells (QWs) have been grown by molecular beam epitaxy using proper interface treatments. By controlling the group-V elements at interfaces, we obtained excellent optical quality QWs, which were free from undesired localized trap states, which may otherwise severely affect the exciton recombination. Strong and highly efficient exciton emissions up to room temperature with a wavelength of 2.2 μm were observed. A comprehensive investigation on the QW quality was carried out using temperature dependent and power dependent photoluminescence (PL) measurements. The PL emission intensity remains nearly constant at low temperatures and is free from the PL quenching from the defect induced localized states. The temperature dependent emission energy had a bulk-like behavior, indicating high quality well/barrier interfaces. Because of the uniformity of the QWs and smooth interfaces, the low temperature limit of inhomogeneous line width broadening is as small as 5 meV.

  9. The reaction mechanism of SnSb and Sb thin film anodes for Na-ion batteries studied by X-ray diffraction, 119Sn and 121Sb Mössbauer spectroscopies

    SciTech Connect (OSTI)

    Baggetto, Loïc; Hah, Hien-Yoong; Jumas, Jean-Claude; Johnson, Charles E.; Johnson, Jacqueline A.; Keum, Jong K.; Bridges, Craig A.; Veith, Gabriel M.

    2014-06-01

    The electrochemical reaction of Sb and SnSb anode materials with Na results in the formation of amorphous materials. To understand the resulting phases and electrochemical capacities we studied the reaction products local order using 119Sn and 121Sb Mössbauer spectroscopies in conjunction with measurements performed on model powder compounds of Na-Sn and Na-Sb to further clarify the reactions steps. For pure Sb the discharge (sodiation) starts with the formation of an amorphous phase composed of atomic environments similar to those found in NaSb, and proceeds further by the formation of environments similar to that present in Na3Sb. The reversible reaction takes place during a large portion of the charge process. At full charge the anode material still contains a substantial fraction of Na, which explains the lack of recrystallization into crystalline Sb. The reaction of SnSb yields Na3Sb crystalline phase at full discharge at higher temperatures (65 and 95°C) while the room temperature reaction yields amorphous compounds. The electrochemically-driven, solid-state amorphization reaction occurring at room temperature is governed by the simultaneous formation of Na-coordinated Sn and Sb environments, as monitored by the decrease (increase) of the 119Sn (121Sb) Mössbauer isomer shifts. Overall, the monitoring of the hyperfine parameters enables to correlate the changes in Na content to the individual Sn and Sb local chemical environments.

  10. TANK 40 FINAL SB6 CHEMICAL CHARACTERIZATION RESULTS

    SciTech Connect (OSTI)

    Bannochie, C.

    2010-08-13

    A sample of Sludge Batch 6 (SB6) was taken from Tank 40 in order to obtain radionuclide inventory analyses necessary for compliance with the Waste Acceptance Product Specifications (WAPS), and a portion of the sample was designated for SB6 processing studies. The SB6 WAPS sample was also analyzed for chemical composition including noble metals and fissile composition, and these results are reported here. These analyses along with the WAPS radionuclide analyses will help define the composition of the sludge in Tank 40 that is currently being fed to DWPF as SB6. At the Savannah River National Laboratory (SRNL) the 3-L Tank 40 SB6 sample was transferred from the shipping container into a 4-L high density polyethylene vessel and solids were allowed to settle overnight. Supernate was then siphoned off and circulated through the shipping container to complete the transfer of the sample. Following thorough mixing of the 3-L sample, a 485 g sub-sample was removed. This sub-sample was then utilized for all subsequent analytical samples.

  11. Measurements of Turbulence at Two Tidal Energy Sites in Puget Sound, WA

    SciTech Connect (OSTI)

    Thomson, Jim; Polagye, Brian; Durgesh, Vibhav; Richmond, Marshall C.

    2012-06-05

    Field measurements of turbulence are pre- sented from two sites in Puget Sound, WA (USA) that are proposed for electrical power generation using tidal current turbines. Rapidly sampled data from multiple acoustic Doppler instruments are analyzed to obtain statistical mea- sures of fluctuations in both the magnitude and direction of the tidal currents. The resulting turbulence intensities (i.e., the turbulent velocity fluctuations normalized by the harmonic tidal currents) are typically 10% at the hub- heights (i.e., the relevant depth bin) of the proposed turbines. Length and time scales of the turbulence are also analyzed. Large-scale, anisotropic eddies dominate the energy spectra, which may be the result of proximity to headlands at each site. At small scales, an isotropic turbulent cascade is observed and used to estimate the dissipation rate of turbulent kinetic energy. Data quality and sampling parameters are discussed, with an emphasis on the removal of Doppler noise from turbulence statistics.

  12. Chemical ordering rather than random alloying in SbAs (Journal...

    Office of Scientific and Technical Information (OSTI)

    Chemical ordering rather than random alloying in SbAs Title: Chemical ordering rather than random alloying in SbAs Authors: Shoemaker, Daniel P. ; Chasapis, Thomas C. ; Do, Dat ; ...

  13. A new n-type half-Heusler thermoelectric material NbCoSb (Journal...

    Office of Scientific and Technical Information (OSTI)

    A new n-type half-Heusler thermoelectric material NbCoSb Citation Details In-Document Search Title: A new n-type half-Heusler thermoelectric material NbCoSb Highlights: * ...

  14. Quaternary InGaAsSb Thermophotovoltaic Diode Technology

    SciTech Connect (OSTI)

    M Dashiell; J Beausang; H Ehsani; G Nichols; D DePoy; L Danielson; P Talamo; K Rahner; E Brown; S Burger; P Fourspring; W Topper; P Baldasaro; C Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; Jizhong Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryl

    2005-01-26

    Thermophotovoltaic (TPV) diodes fabricated from InGaAsSb alloys lattice-matched to GaSb substrates are grown by Metal Organic Vapor Phase Epitaxy (MOVPE). 0.53eV InGaAsSb TPV diodes utilizing front-surface spectral control filters have been tested in a vacuum cavity and a TPV thermal-to-electric conversion efficiency ({eta}{sub TPV}) and a power density (PD) of {eta}{sub TPV} = 19% and PD=0.58 W/cm{sup 2} were measured for T{sub radiator} = 950 C and T{sub diode} = 27 C. Recombination coefficients deduced from minority carrier measurements and the theory reviewed in this article predict a practical limit to the maximum achievable conversion efficiency and power density for 0.53eV InGaAsSb TPV. The limits for the above operating temperatures are projected to be {eta}{sub TPV} = 26% and PD = 0.75 W/cm{sup 2}. These limits are extended to {eta}{sub TPV} = 30% and PD = 0.85W/cm{sup 2} if the diode active region is bounded by a reflective back surface to enable photon recycling and a two-pass optical path length. The internal quantum efficiency of the InGaAsSb TPV diode is close to the theoretically predicted limits, with the exception of short wavelength absorption in GaSb contact layers. Experiments show that the open circuit voltage of the 0.53eV InGaAsSb TPV diodes is not strongly dependent on the device architectures studied in this work where both N/P and P/N double heterostructure diodes have been grown with various acceptor and donor doping levels, having GaSb and AlGaAsSb confinement, and also partial back surface reflectors. Lattice matched InGaAsSb TPV diodes were fabricated with bandgaps ranging from 0.6 to 0.5eV without significant degradation of the open circuit voltage factor, quantum efficiency, or fill factor as the composition approached the miscibility gap. The key diode performance parameter which is limiting efficiency and power density below the theoretical limits in InGaAsSb TPV devices is the open circuit voltage. The open circuit voltages of

  15. SB Electronics Breaks Ground on New Factory | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    SB Electronics Breaks Ground on New Factory SB Electronics Breaks Ground on New Factory April 29, 2010 - 5:22pm Addthis U.S. Rep. Peter Welch (from left), Vermont Lt. Gov. Brian Dubie, SBE board member Win Hunter, SBE board chair Stan Fishkin, Assi U.S. Rep. Peter Welch (from left), Vermont Lt. Gov. Brian Dubie, SBE board member Win Hunter, SBE board chair Stan Fishkin, Assi Paul Lester Paul Lester Digital Content Specialist, Office of Public Affairs A Vermont company broke ground on a new

  16. Growth of Sb-Bi gradient single crystals

    SciTech Connect (OSTI)

    Kozhemyakin, G. N. Lutskiy, D. V.; Rom, M. A.; Mateychenko, P. V.

    2008-12-15

    The growth conditions and structural quality of Sb-Bi gradient single crystals with Bi content from 2 to 18 at %, grown by the Czochralski method with solid phase feed, are investigated. Bi distribution in the crystals along their pulling direction are studied by electron probe microanalysis and the change in the interplanar spacing is analyzed by double-crystal X-ray diffraction. It is established that the pulling rate and feed mass affect the Bi distribution in Sb-Bi single crystals.

  17. Structural transformations in amorphous ↔ crystalline phase change of Ga-Sb alloys

    SciTech Connect (OSTI)

    Edwards, T. G.; Sen, S.; Hung, I.; Gan, Z.; Kalkan, B.; Raoux, S.

    2013-12-21

    Ga-Sb alloys with compositions ranging between ∼12 and 50 at. % Ga are promising materials for phase change random access memory applications. The short-range structures of two such alloys with compositions Ga{sub 14}Sb{sub 86} and Ga{sub 46}Sb{sub 54} are investigated, in their amorphous and crystalline states, using {sup 71}Ga and {sup 121}Sb nuclear magnetic resonance spectroscopy and synchrotron x-ray diffraction. The Ga and Sb atoms are fourfold coordinated in the as-deposited amorphous Ga{sub 46}Sb{sub 54} with nearly 40% of the constituent atoms being involved in Ga-Ga and Sb-Sb homopolar bonding. This necessitates extensive bond switching and elimination of homopolar bonds during crystallization. On the other hand, Ga and Sb atoms are all threefold coordinated in the as-deposited amorphous Ga{sub 14}Sb{sub 86}. Crystallization of this material involves phase separation of GaSb domains in Sb matrix and a concomitant increase in the Ga coordination number from 3 to 4. Results from crystallization kinetics experiments suggest that the melt-quenching results in the elimination of structural “defects” such as the homopolar bonds and threefold coordinated Ga atoms in the amorphous phases of these alloys, thereby rendering them structurally more similar to the corresponding crystalline states compared to the as-deposited amorphous phases.

  18. Quaternary InGaAsSb Thermophotovoltaic Diodes

    SciTech Connect (OSTI)

    MW Dashiell; JF Beausang; H Ehsani; GJ Nichols; DM Depoy; LR Danielson; P Talamo; KD Rahner; EJ Brown; SR Burger; PM Foruspring; WF Topper; PF Baldasaro; CA Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; J Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryi

    2006-03-09

    In{sub x}Ga{sub 1-x}As{sub y}Sb{sub 1-y} thermophotovoltaic (TPV) diodes were grown lattice-matched to GaSb substrates by Metal Organic Vapor Phase Epitaxy (MOVPE) in the bandgap range of E{sub G} = 0.5 to 0.6eV. InGaAsSb TPV diodes, utilizing front-surface spectral control filters, are measured with thermal-to-electric conversion efficiency and power density of {eta}{sub TPV} = 19.7% and PD =0.58 W/cm{sup 2} respectively for a radiator temperature of T{sub radiator} = 950 C, diode temperature of T{sub diode} = 27 C, and diode bandgap of E{sub G} = 0.53eV. Practical limits to TPV energy conversion efficiency are established using measured recombination coefficients and optical properties of front surface spectral control filters, which for 0.53eV InGaAsSb TPV energy conversion is {eta}{sub TPV} = 28% and PD = 0.85W/cm{sup 2} at the above operating temperatures. The most severe performance limits are imposed by (1) diode open-circuit voltage (VOC) limits due to intrinsic Auger recombination and (2) parasitic photon absorption in the inactive regions of the module. Experimentally, the diode V{sub OC} is 15% below the practical limit imposed by intrinsic Auger recombination processes. Analysis of InGaAsSb diode electrical performance vs. diode architecture indicate that the V{sub OC} and thus efficiency is limited by extrinsic recombination processes such as through bulk defects.

  19. EIS-0473: W.A. Parish Post-Combustion CO2 Capture and Sequestration Project (PCCS), Fort Bend County, TX

    Energy.gov [DOE]

    This EIS evaluates the environmental impacts of a proposal to provide financial assistance for a project proposed by NRG Energy, Inc (NRG). DOE selected NRG’s proposed W.A. Parish Post-Combustion CO2 Capture and Sequestration Project for a financial assistance award through a competitive process under the Clean Coal Power Initiative Program. NRG would design, construct and operate a commercial-scale carbon dioxide (CO2) capture facility at its existing W.A. Parish Generating Station in Fort Bend County, Texas; deliver the CO2 via a new pipeline to the existing West Ranch oil field in Jackson County, Texas, for use in enhanced oil recovery operations; and demonstrate monitoring techniques to verify the permanence of geologic CO2 storage.

  20. TANK 40 FINAL SB7B CHEMICAL CHARACTERIZATION RESULTS

    SciTech Connect (OSTI)

    Bannochie, C.

    2012-03-15

    A sample of Sludge Batch 7b (SB7b) was taken from Tank 40 in order to obtain radionuclide inventory analyses necessary for compliance with the Waste Acceptance Product Specifications (WAPS). The SB7b WAPS sample was also analyzed for chemical composition including noble metals and fissile constituents, and these results are reported here. These analyses along with the WAPS radionuclide analyses will help define the composition of the sludge in Tank 40 that is currently being fed to the Defense Waste Processing Facility (DWPF) as SB7b. At the Savannah River National Laboratory (SRNL) the 3-L Tank 40 SB7b sample was transferred from the shipping container into a 4-L high density polyethylene bottle and solids were allowed to settle over the weekend. Supernate was then siphoned off and circulated through the shipping container to complete the transfer of the sample. Following thorough mixing of the 3-L sample, a 558 g sub-sample was removed. This sub-sample was then utilized for all subsequent analytical samples. Eight separate aliquots of the slurry were digested, four with HNO{sub 3}/HCl (aqua regia) in sealed Teflon{reg_sign} vessels and four with NaOH/Na{sub 2}O{sub 2} (alkali or peroxide fusion) using Zr crucibles. Two Analytical Reference Glass - 1 (ARG-1) standards were digested along with a blank for each preparation. Each aqua regia digestion and blank was diluted to 1:100 mL with deionized water and submitted to Analytical Development (AD) for inductively coupled plasma - atomic emission spectroscopy (ICP-AES) analysis, inductively coupled plasma - mass spectrometry (ICP-MS) analysis, atomic absorption spectroscopy (AA) for As and Se, and cold vapor atomic absorption spectroscopy (CV-AA) for Hg. Equivalent dilutions of the alkali fusion digestions and blank were submitted to AD for ICP-AES analysis. Tank 40 SB7b supernate was collected from a mixed slurry sample in the SRNL Shielded Cells and submitted to AD for ICP-AES, ion chromatography (IC), total base

  1. Magnetic properties of MnSb inclusions formed in GaSb matrix directly during molecular beam epitaxial growth

    SciTech Connect (OSTI)

    Lawniczak-Jablonska, Krystyna; Wolska, Anna; Klepka, Marcin T.; Kret, Slawomir; Kurowska, Boguslawa; Kowalski, Bogdan J.; Twardowski, Andrzej; Wasik, Dariusz; Kwiatkowski, Adam; Sadowski, Janusz

    2011-04-01

    Despite of intensive search for the proper semiconductor base materials for spintronic devices working at room temperature no appropriate material based on ferromagnetic semiconductors has been found so far. We demonstrate that the phase segregated system with MnSb hexagonal inclusions inside the GaSb matrix, formed directly during the molecular beam epitaxial growth reveals the ferromagnetic properties at room temperature and is a good candidate for exploitation in spintronics. Furthermore, the MnSb inclusions with only one crystalline structure were identified in this GaMn:MnSb granular material. The SQUID magnetometry confirmed that this material exhibits ferromagnetic like behavior starting from helium up to room temperature. Moreover, the magnetic anisotropy was found which was present also at room temperature, and it was proved that by choosing a proper substrate it is possible to control the direction of easy axis of inclusions' magnetization moment between in-plane and out-of-plane; the latter is important in view of potential applications in spintronic devices.

  2. Influence of substituting Sn for Sb on the thermoelectric transport properties of CoSb{sub 3}-based skutterudites

    SciTech Connect (OSTI)

    Hui, Si; Nielsen, Michele D.; Homer, Mark R.; Medlin, Douglas L.; Tobola, Janusz; Salvador, James R.; Heremans, Joseph P.; Pipe, Kevin P.; Uher, Ctirad

    2014-03-14

    Band structure calculations that incorporate impurity effects suggest that a band resonant state may be formed in p-type CoSb{sub 3}-based skutterudites by replacing Sb atoms with Sn dopant atoms. Such resonant states have the potential to greatly improve thermoelectric energy conversion efficiency by increasing the density of states variation near the Fermi level, thereby increasing the Seebeck coefficient at a given carrier concentration. Through transport measurements of the Seebeck coefficient, electrical conductivity, thermal conductivity, and Hall coefficient, we show that a practical band resonant state is not achieved by Sn doping. Compared to undoped CoSb{sub 3}, the dimensionless figure of merit (ZT) in Sn-doped CoSb{sub 3} is enhanced slightly at high temperatures to a value of 0.2, mostly due to a reduction in thermal conductivity. The Fermi level is calculated not to reach the band resonant state induced by Sn impurity atoms within the range of Sn concentrations examined here.

  3. Origin State>> CA ID ID ID IL KY NV NY NY OH TN TN TN, WA, CA

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    NV NY NY OH TN TN TN, WA, CA TN TN TN TN TX Total Shipments by Route Lawrence Livermore National Laboratory Advanced Mixed Waste Treatment Project Batelle Energy Alliance Idaho National Laboratory Argonne National Laboratory Paducah Gaseous Diffusion Plant National Security Technologies Brookhaven National Laboratory West Valley Environmental Services Portsmouth Gaseous Diffusion Plant Duratek/Energy Solutions Babcox & Wilcox Technical Services Y-12 Plant Materials & Energy Corporation

  4. Origin State>> CA ID ID ID IL MD NM NM NY OH TN TN TN, WA, CA

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    NY OH TN TN TN, WA, CA TN TN TN TX Total Shipments by Route Lawrence Livermore National Laboratory Batelle Energy Alliance Idaho National Laboratory Advanced Mixed Waste Treatment Project Argonne National Laboratory Aberdeen Proving Ground Sandia National Laboratory Los Alamos National Laboratory Brookhaven National Laboratory Portsmouth Gaseous Diffusion Plant Duratek/Energy Solutions Babcox & Wilcox Technical Services Y-12 Plant Materials & Energy Corporation (M&EC) Perma-Fix

  5. Origin State>> CA ID ID ID IL NM NM OH TN TN TN, WA, CA TN TN

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    NM NM OH TN TN TN, WA, CA TN TN TN TN TX Total Shipments by Route Lawrence Livermore National Laboratory Batelle Energy Alliance Idaho National Laboratory Advanced Mixed Waste Treatment Project Argonne National Laboratory Sandia National Laboratory Los Alamos National Laboratory Portsmouth Gaseous Diffusion Plant Duratek/Energy Solutions Babcox & Wilcox Technical Services Y-12 Plant Materials & Energy Corporation (M&EC) Perma-Fix Nuclear Fuels Services Wastren Advantage, Inc.

  6. Origin State>> CA ID ID IL IL KY NM NM NV NY OH TN TN TN, WA,

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    IL IL KY NM NM NV NY OH TN TN TN, WA, CA TN TN TN TN Total Shipments by Route Lawrence Livermore National Laboratory Batelle Energy Alliance Idaho National Laboratory Energx Argonne National Laboratory Argonne National Laboratory Paducah Gaseous Diffusion Plant Sandia National Laboratory Los Alamos National Laboratory National Security Technologies West Valley Environmental Services Portsmouth Gaseous Diffusion Plant Duratek/Energy Solutions Babcox & Wilcox Technical Services Y-12 Plant

  7. Electronic structures of [001]- and [111]-oriented InSb and GaSb free-standing nanowires

    SciTech Connect (OSTI)

    Liao, Gaohua; Luo, Ning; Yang, Zhihu; Chen, Keqiu; Xu, H. Q. E-mail: hongqi.xu@ftf.lth.se

    2015-09-07

    We report on a theoretical study of the electronic structures of InSb and GaSb nanowires oriented along the [001] and [111] crystallographic directions. The nanowires are described by atomistic, tight-binding models, including spin-orbit interaction. The band structures and the wave functions of the nanowires are calculated by means of a Lanczos iteration algorithm. For the [001]-oriented InSb and GaSb nanowires, the systems with both square and rectangular cross sections are considered. Here, it is found that all the energy bands are doubly degenerate. Although the lowest conduction bands in these nanowires show good parabolic dispersions, the top valence bands show rich and complex structures. In particular, the topmost valence bands of the nanowires with a square cross section show a double maximum structure. In the nanowires with a rectangular cross section, this double maximum structure is suppressed, and the top valence bands gradually develop into parabolic bands as the aspect ratio of the cross section is increased. For the [111]-oriented InSb and GaSb nanowires, the systems with hexagonal cross sections are considered. It is found that all the bands at the Γ-point are again doubly degenerate. However, some of them will split into non-degenerate bands when the wave vector moves away from the Γ-point. Although the lowest conduction bands again show good parabolic dispersions, the topmost valence bands do not show the double maximum structure. Instead, they show a single maximum structure with its maximum at a wave vector slightly away from the Γ-point. The wave functions of the band states near the band gaps of the [001]- and [111]-oriented InSb and GaSb nanowires are also calculated and are presented in terms of probability distributions in the cross sections. It is found that although the probability distributions of the band states in the [001]-oriented nanowires with a rectangular cross section could be qualitatively described by one-band effective

  8. GaSb substrates with extended IR wavelength for advanced space based applications

    SciTech Connect (OSTI)

    Allen, Lisa P.; Flint, Patrick; Dallas, Gordon; Bakken, Daniel; Blanchat, Kevin; Brown, Gail J.; Vangala, Shivashankar R.; Goodhue, William D.; Krishnaswami, Kannan

    2009-05-01

    GaSb substrates have advantages that make them attractive for implementation of a wide range of infrared (IR) detectors with higher operating temperatures for stealth and space based applications. A significant aspect that would enable widespread commercial application of GaSb wafers for very long wavelength IR (VLWIR) applications is the capability for transmissivity beyond 15 m. Due largely to the GaSb (antisite) defect and other point defects in undoped GaSb substrates, intrinsic GaSb is still slightly p-type and strongly absorbs in the VLWIR. This requires backside thinning of the GaSb substrate for IR transmissivity. An extremely low n-type GaSb substrate is preferred to eliminate thinning and provide a substrate solution for backside illuminated VLWIR devices. By providing a more homogeneous radial distribution of the melt solute to suppress GaSb formation and controlling the cooling rate, ultra low doped n:GaSb has been achieved. This study examines the surface properties and IR transmission spectra of ultra low doped GaSb substrates at both room and low temperatures. Atomic force microscopy (AFM), homoepitaxy by MBE, and infrared Fourier transform (FTIR) analysis was implemented to examine material quality. As compared with standard low doped GaSb, the ultra low doped substrates show over 50% transmission and consistent wavelength transparency past 23 m with improved %T at low temperature. Homoepitaxy and AFM results indicate the ultra low doped GaSb has a low thermal desorbtion character and qualified morphology. In summary, improvements in room temperature IR transmission and extended wavelength characteristics have been shown consistently for ultra low doped n:GaSb substrates.

  9. Phase transitions in Ge-Sb phase change materials

    SciTech Connect (OSTI)

    Raoux, Simone; Virwani, Kumar; Hitzbleck, Martina; Salinga, Martin; Madan, Anita; Pinto, Teresa L.

    2009-03-15

    Thin films of the phase change material Ge-Sb with Ge concentrations between 7.3 and 81.1 at. % were deposited by cosputtering from elemental targets. Their crystallization behavior was studied using time-resolved x-ray diffraction, Auger electron spectroscopy, differential scanning calorimetry, x-ray reflectivity, profilometry, optical reflectivity, and resistivity versus temperature measurements. It was found that the crystallization temperature increases with Ge content. Calculations of the glass transition temperature (which is a lower limit for the crystallization temperature T{sub x}) also show an increase with Ge concentration closely tracking the measured values of T{sub x}. For low Ge content samples, Sb x-ray diffraction peaks occurred during a heating ramp at lower temperature than Ge diffraction peaks. The appearance of Ge peaks is related to Ge precipitation and agglomeration. For Ge concentrations of 59.3 at. % and higher, Sb and Ge peaks occurred at the same temperature. Upon crystallization, film mass density and optical reflectivity increase as well as electrical contrast (ratio of resistivity in amorphous phase to crystalline phase) all showed a maximum for the eutectic alloy (14.5 at. % Ge). For the alloy with 59.3 at. % Ge there was very little change in any of these parameters, while the alloy with 81.1 at. % Ge behaved opposite to a typical phase change alloy and showed reduced mass density and reflectivity and increased resistivity.

  10. Short-wave infrared barriode detectors using InGaAsSb absorption material lattice matched to GaSb

    SciTech Connect (OSTI)

    Craig, A. P.; Percy, B.; Marshall, A. R. J.; Jain, M.; Wicks, G.; Hossain, K.; Golding, T.; McEwan, K.; Howle, C.

    2015-05-18

    Short-wave infrared barriode detectors were grown by molecular beam epitaxy. An absorption layer composition of In{sub 0.28}Ga{sub 0.72}As{sub 0.25}Sb{sub 0.75} allowed for lattice matching to GaSb and cut-off wavelengths of 2.9 μm at 250 K and 3.0 μm at room temperature. Arrhenius plots of the dark current density showed diffusion limited dark currents approaching those expected for optimized HgCdTe-based detectors. Specific detectivity figures of around 7×10{sup 10} Jones and 1×10{sup 10} Jones were calculated, for 240 K and room temperature, respectively. Significantly, these devices could support focal plane arrays working at higher operating temperatures.

  11. GaInP semiconductor compounds doped with the Sb isovalent impurity

    SciTech Connect (OSTI)

    Skachkov, A. F.

    2015-05-15

    GaInP{sub 1−x}Sb{sub x} layers containing different Sb fractions are produced by metal-organic vaporphase epitaxy on GaAs and Ge substrates. The charge-carrier mobilities in the GaInP{sub 1−x}Sb{sub x} layers are measured at room temperature and 77 K. The room-temperature charge-carrier mobilities in the GaInP{sub 1−x}Sb{sub x} layers additionally doped with donor and acceptor impurities are measured. The photoluminescence peaks of GaInP{sub 1−x}Sb{sub x} are detected. The influence of the Sb impurity on the band gap and charge-carrier mobility in GaInP is determined.

  12. Ab initio study of structural, electronic, magnetic alloys: XTiSb (X = Co, Ni and Fe)

    SciTech Connect (OSTI)

    Ibrir, M. Berri, S.; Lakel, S.; Alleg, S.; Bensalem, R.

    2015-03-30

    Structural, electronic and magnetic properties of three semi-Heusler compounds of CoTiSb, NiTiSb and FeTiSb were calculated by the method (FP-LAPW) which is based on the DFT code WIEN2k. We used the generalized gradient approximation (GGA (06)) for the term of the potential exchange and correlation (XC) to calculate structural properties, electronic properties and magnetic properties. Structural properties obtained as the lattice parameter are in good agreement with the experimental results available for the electronic and magnetic properties was that: CoTiSb is a semiconductor NiTiSb is a metal and FeTiSb is a half-metal ferromagnetic.

  13. Comparative analysis of hole transport in compressively strained InSb and Ge quantum well heterostructures

    SciTech Connect (OSTI)

    Agrawal, Ashish; Barth, Michael; Madan, Himanshu; Datta, Suman; Lee, Yi-Jing; Lin, You-Ru; Wu, Cheng-Hsien; Ko, Chih-Hsin; Wann, Clement H.; Loubychev, Dmitri; Liu, Amy; Fastenau, Joel; Lindemuth, Jeff

    2014-08-04

    Compressively strained InSb (s-InSb) and Ge (s-Ge) quantum well heterostructures are experimentally studied, with emphasis on understanding and comparing hole transport in these two-dimensional confined heterostructures. Magnetotransport measurements and bandstructure calculations indicate 2.5 lower effective mass for s-InSb compared to s-Ge quantum well at 1.9??10{sup 12}?cm{sup 2}. Advantage of strain-induced m* reduction is negated by higher phonon scattering, degrading hole transport at room temperature in s-InSb quantum well compared to s-Ge heterostructure. Consequently, effective injection velocity is superior in s-Ge compared to s-InSb. These results suggest s-Ge quantum well heterostructure is more favorable and promising p-channel candidate compared to s-InSb for future technology node.

  14. Method of making AlInSb by metal-organic chemical vapor deposition

    DOE Patents [OSTI]

    Biefeld, Robert M. (Albuquerque, NM); Allerman, Andrew A. (Albuquerque, NM); Baucom, Kevin C. (Albuquerque, NM)

    2000-01-01

    A method for producing aluminum-indium-antimony materials by metal-organic chemical vapor deposition (MOCVD). This invention provides a method of producing Al.sub.X In.sub.1-x Sb crystalline materials by MOCVD wherein an Al source material, an In source material and an Sb source material are supplied as a gas to a heated substrate in a chamber, said Al source material, In source material, and Sb source material decomposing at least partially below 525.degree. C. to produce Al.sub.x In.sub.1-x Sb crystalline materials wherein x is greater than 0.002 and less than one.

  15. Chemical ordering rather than random alloying in SbAs (Journal...

    Office of Scientific and Technical Information (OSTI)

    Title: Chemical ordering rather than random alloying in SbAs Authors: Shoemaker, Daniel P. ; Chasapis, Thomas C. ; Do, Dat ; Francisco, Melanie C. ; Chung, Duck Young ; Mahanti, S. ...

  16. HIA 2015 DOE Zero Energy Ready Home Case Study: TC Legend Homes, Bellingham Power House, Bellingham, WA

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Bellingham Power House Bellingham, WA DOE ZERO ENERGY READY HOME(tm) The U.S. Department of Energy invites home builders across the country to meet the extraordinary levels of excellence and quality specified in DOE's Zero Energy Ready Home program (formerly known as Challenge Home). Every DOE Zero Energy Ready Home starts with ENERGY STAR Certified Homes Version 3.0 for an energy-efficient home built on a solid foundation of building science research. Advanced technologies are designed in to

  17. Analyses of soils at commercial radioactive-waste-disposal sites. [Barnwell, SC; Richland, WA

    SciTech Connect (OSTI)

    Piciulo, P.L.; Shea, C.E.; Barletta, R.E.

    1982-01-01

    Brookhaven National Laboratory, in order to provide technical assistance to the NRC, has measured a number of physical and chemical characteristics of soils from two currently operating commercial radioactive waste disposal sites; one at Barnwell, SC, and the other near Richland, WA. Soil samples believed to be representative of the soil that will contact the buried waste were collected and analyzed. Earth resistivities (field measurements), from both sites, supply information to identify variations in subsurface material. Barnwell soil resistivities (laboratory measurements) range from 3.6 x 10/sup 5/ ohm-cm to 8.9 x 10/sup 4/ ohm-cm. Soil resistivities of the Hanford sample vary from 3.0 x 10/sup 5/ ohm-cm to 6.6 x 10/sup 3/ ohm-cm. The Barnwell and Hanford soil pH ranges from 4.8 to 5.4 and from 4.0 to 7.2 respectively. The pH of a 1:2 mixture of soil to 0.01 M CaCl/sub 2/ resulted in a pH for the Barnwell samples of 3.9 +- 0.1 and for the Hanford samples of 7.4 +- 0.2. These values are comparable to the pH measurements of the water extract of the soils used for the analyses of soluble ion content of the soils. The exchange acidity of the soils was found to be approximately 7 mg-eq per 100 g of dry soil for clay material from Barnwell, whereas the Hanford soils showed an alkaline reaction. Aqueous extracts of saturated pastes were used to determine the concentrations of the following ions: Ca/sup 2 +/, Mg/sup 2 +/, K/sup +/, Na/sup +/, HCO/sub 3//sup -/, SO/sub 4//sup =/, and Cl/sup -/. The sulfide content of each of the soils was measured in a 1:2.5 mixture of soil to an antioxidant buffer solution. The concentrations of soluble ions found in the soils from both sites are consistent with the high resistivities.

  18. High-temperature luminescence in an n-GaSb/n-InGaAsSb/p-AlGaAsSb light-emitting heterostructure with a high potential barrier

    SciTech Connect (OSTI)

    Petukhov, A. A., E-mail: andrey-rus29@rambler.ru; Zhurtanov, B. E.; Kalinina, K. V.; Stoyanov, N. D.; Salikhov, H. M.; Mikhailova, M. P.; Yakovlev, Yu. P. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)] [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

    2013-09-15

    The electroluminescent properties of an n-GaSb/n-InGaAsSb/p-AlGaAsSb heterostructure with a high potential barrier in the conduction band (large conduction-band offset) at the n-GaSb/n-InGaAsSb type-II heterointerface ({Delta}E{sub c} = 0.79 eV) are studied. Two bands with peaks at 0.28 and 0.64 eV at 300 K, associated with radiative recombination in n-InGaAsSb and n-GaSb, respectively, are observed in the electroluminescence (EL) spectrum. In the entire temperature range under study, T = 290-480 K, additional electron-hole pairs are formed in the n-InGaAsSb active region by impact ionization with hot electrons heated as a result of the conduction-band offset. These pairs contribute to radiative recombination, which leads to a nonlinear increase in the EL intensity and output optical power with increasing pump current. A superlinear increase in the emission power of the long-wavelength band is observed upon heating in the temperature range T = 290-345 K, and a linear increase is observed at T > 345 K. This work for the first time reports an increase in the emission power of a light-emitting diode structure with increasing temperature. It is shown that this rise is caused by a decrease in the threshold energy of the impact ionization due to narrowing of the band gap of the active region.

  19. The reaction mechanism of FeSb2 as anode for sodium-ion batteries

    DOE PAGES-Beta [OSTI]

    Baggetto, Loic; Hah, Hien-Yoong; Charles E. Johnson; Bridges, Craig A.; Johnson, Jackie A.; Veith, Gabriel M.

    2014-04-04

    The electrochemical reaction of FeSb2 with Na is reported for the first time. The first discharge (sodiation) potential profile of FeSb2 is characterized by a gentle slope centered at 0.25 V. During charge (Na removal) and the subsequent discharge, the main reaction takes place near 0.7 V and 0.4 V, respectively. The reversible storage capacity amounts to 360 mA h g-1, which is smaller than the theoretical value of 537 mA h g-1. The reaction, studied by ex situ and in situ X-ray diffraction, is found to proceed by the consumption of crystalline FeSb2 to form an amorphous phase. Uponmore » further sodiation, the formation of nanocrystalline Na3Sb domains is evidenced. During desodiation, Na3Sb domains convert into an amorphous phase. The chemical environment of Fe, probed by 57Fe Mo ssbauer spectroscopy, undergoes significant changes during the reaction. During sodiation, the well-resolved doublet of FeSb2 with an isomer shift around 0.45 mm s-1 and a quadrupole splitting of 1.26 mm s-1 is gradually converted into a doublet line centered at about 0.15 mm s1 along with a singlet line around 0 mm s-1. The former signal results from the formation of a Fe-rich FexSb alloy with an estimated composition of Fe4Sb while the latter signal corresponds to superparamagnetic Fe due to the formation of nanosized pure Fe domains. Interestingly the signal of Fe4Sb remains unaltered during desodiation. This mechanism is substantially different than that observed during the reaction with Li. The irreversible formation of a Fe-rich Fe4Sb alloy and the absence of full desodiation of Sb domains explain the lower than theoretical practical storage capacity.« less

  20. Probing the Mechanism of Sodium Ion Insertion into Copper Antimony Cu2 Sb Anodes

    DOE PAGES-Beta [OSTI]

    Baggetto, Loïc; Carroll, Kyler J.; Hah, Hien-Yoong; Johnson, Charles E.; Mullins, David R.; Unocic, Raymond R.; Johnson, Jacqueline A.; Meng, Ying Shirley; Veith, Gabriel M.

    2014-03-25

    Cycling Cu2Sb films with fluoroethylene carbonate additive drastically improves the capacity retention of the electrode compared to cycling in pure PC with about 250 mAh g-1 retained capacity for about two hundred cycles. TEM photographs reveal that the pristine films are formed of nanoparticles of 5-20 nm diameters. XRD results highlight that during the first discharge the reaction leads to the formation of Na3Sb via an intermediate amorphous phase. During charge, Na3Sb crystallites convert into an amorphous phase, which eventually crystallizes into Cu2Sb at full charge, indicating a high degree of structural reversibility. The subsequent discharge is marked by amore » new plateau around 0.5 V at low Na/Sb content which does not correspond to the formation of a crystalline phase. XAS data show that the fully discharged electrode material has interatomic distances matching those expected for the coexistence of Cu and Na3Sb nanodomains. At 1 V charge, the structure somewhat differs from that of Cu2Sb whereas at 2 V charge, when all Na is removed, the structure is significantly closer to that of the starting material. 121Sb Mössbauer spectroscopy isomer shifts of Cu2Sb powder (-9.67 mm s-1) and thin films (-9.65 mm s-1) are reported for the first time, and agree with the value predicted theoretically. At full discharge, an isomer shift (-8.10 mm s-1) rather close to that of a Na3Sb reference powder (-8.00 mm s-1) is measured, in agreement with the formation of Na3Sb domains evidenced by XRD and XAS data. The isomer shift at 1 V charge (-9.29 mm s-1) is close to that of the pristine material and the higher value is in agreement with the lack of full desodiation at 1 V.« less

  1. Probing the mechanism of sodium ion insertion into copper antimony Cu2Sb anodes

    DOE PAGES-Beta [OSTI]

    Baggetto, Loic; Carroll, Kyler J.; Hah, Hien -Yoong; Johnson, Charles E.; Mullins, David R.; Unocic, Raymond R.; Johnson, Jacqueline A.; Meng, Ying Shirley; Veith, Gabriel M.

    2014-03-25

    Cycling Cu2Sb films with fluoroethylene carbonate additive drastically improves the capacity retention of the electrode compared to cycling in pure PC with about 250 mAh g-1 retained capacity for about two hundred cycles. TEM photographs reveal that the pristine films are formed of nanoparticles of 5-20 nm diameters. XRD results highlight that during the first discharge the reaction leads to the formation of Na3Sb via an intermediate amorphous phase. During charge, Na3Sb crystallites convert into an amorphous phase, which eventually crystallizes into Cu2Sb at full charge, indicating a high degree of structural reversibility. The subsequent discharge is marked by amore » new plateau around 0.5 V at low Na/Sb content which does not correspond to the formation of a crystalline phase. XAS data show that the fully discharged electrode material has interatomic distances matching those expected for the coexistence of Cu and Na3Sb nanodomains. At 1 V charge, the structure somewhat differs from that of Cu2Sb whereas at 2 V charge, when all Na is removed, the structure is significantly closer to that of the starting material. 121Sb Mössbauer spectroscopy isomer shifts of Cu2Sb powder (-9.67 mm s-1) and thin films (-9.65 mm s-1) are reported for the first time, and agree with the value predicted theoretically. At full discharge, an isomer shift (-8.10 mm s-1) rather close to that of a Na3Sb reference powder (-8.00 mm s-1) is measured, in agreement with the formation of Na3Sb domains evidenced by XRD and XAS data. As a result, the isomer shift at 1 V charge (-9.29 mm s-1) is close to that of the pristine material and the higher value is in agreement with the lack of full desodiation at 1 V.« less

  2. Tank 40 Final SB7b Chemical Characterization Results

    SciTech Connect (OSTI)

    Bannochie, C. J.

    2012-11-06

    A sample of Sludge Batch 7b (SB7b) was taken from Tank 40 in order to obtain radionuclide inventory analyses necessary for compliance with the Waste Acceptance Product Specifications (WAPS). The SB7b WAPS sample was also analyzed for chemical composition including noble metals and fissile constituents. At the Savannah River National Laboratory (SRNL) the 3-L Tank 40 SB7b sample was transferred from the shipping container into a 4-L high density polyethylene bottle and solids were allowed to settle over the weekend. Supernate was then siphoned off and circulated through the shipping container to complete the transfer of the sample. Following thorough mixing of the 3-L sample, a 558 g sub-sample was removed. This sub-sample was then utilized for all subsequent analytical samples. Eight separate aliquots of the slurry were digested, four with HNO{sub 3}/HCl (aqua regia) in sealed Teflon? vessels and four with NaOH/Na{sub 2}O{sub 2} (alkali or peroxide fusion) using Zr crucibles. Two Analytical Reference Glass ? 1 (ARG-1) standards were digested along with a blank for each preparation. Each aqua regia digestion and blank was diluted to 1:100 mL with deionized water and submitted to Analytical Development (AD) for inductively coupled plasma ? atomic emission spectroscopy (ICP-AES) analysis, inductively coupled plasma ? mass spectrometry (ICP-MS) analysis, atomic absorption spectroscopy (AA) for As and Se, and cold vapor atomic absorption spectroscopy (CV-AA) for Hg. Equivalent dilutions of the alkali fusion digestions and blank were submitted to AD for ICP-AES analysis. Tank 40 SB7b supernate was collected from a mixed slurry sample in the SRNL Shielded Cells and submitted to AD for ICP-AES, ion chromatography (IC), total base/free OH{sup -}/other base, total inorganic carbon/total organic carbon (TIC/TOC) analyses, and Cs-137 gamma scan. Weighted dilutions of slurry were submitted for IC, TIC/TOC, and total base/free OH-/other base analyses. Activities for U-233, U-235

  3. Temperature dependence of the dielectric response of AlSb

    SciTech Connect (OSTI)

    Jung, Y. W.; Kim, T. J.; Kim, Y. D.; Shin, S. H.; Kim, S. Y.; Song, J. D.

    2011-12-23

    Spectroscopic ellipometry was used to determine the optical response of an intrinsic AlSb film as a function of temperature. The 1.5 {mu}m thick film was grown on a (001) GaAs substrate by molecular beam epitaxy. Measurements were done at temperatures from 300 K to the growth temperature of 800 K over a spectral range of 0.7 to 5.0 eV. To avoid oxidation artifacts, measurements were done with the film in situ. The data were analyzed using a parametric semiconductor model for its temperature dependence.

  4. Spintronic properties of Li1.5Mn0.5Z (Z=As, Sb) compounds in...

    Office of Scientific and Technical Information (OSTI)

    Publisher's Accepted Manuscript: Spintronic properties of Li1.5Mn0.5Z (ZAs, Sb) compounds in the Cu2Sb structure This content will become publicly available on January 26, 2017 ...

  5. Facile synthesis of one-dimensional peapod-like Sb@C submicron-structures

    SciTech Connect (OSTI)

    Luo, W; Lorger, S; Wang, B; Bommier, C; Ji, XL

    2014-01-01

    We demonstrate a novel synthetic route to fabricate a one-dimensional peapod-like Sb@C structure with disperse Sb submicron-particles encapsulated in carbon submicron-tubes. The synthetic route may well serve as a general methodology for fabricating carbon/metallic fine structures by thermally reducing their carbon-coated metal oxide composites.

  6. In-situ crystallization of GeTe\\GaSb phase change memory stacked films

    SciTech Connect (OSTI)

    Velea, A.; Borca, C. N.; Grolimund, D.; Socol, G.; Galca, A. C.; Popescu, M.; Bokhoven, J. A. van

    2014-12-21

    Single and double layer phase change memory structures based on GeTe and GaSb thin films were deposited by pulsed laser deposition (PLD). Their crystallization behavior was studied using in-situ synchrotron techniques. Electrical resistance vs. temperature investigations, using the four points probe method, showed transition temperatures of 138 °C and 198 °C for GeTe and GaSb single films, respectively. It was found that after GeTe crystallization in the stacked films, Ga atoms from the GaSb layer diffused in the vacancies of the GeTe crystalline structure. Therefore, the crystallization temperature of the Sb-rich GaSb layer is decreased by more than 30 °C. Furthermore, at 210 °C, the antimony excess from GaSb films crystallizes as a secondary phase. At higher annealing temperatures, the crystalline Sb phase increased on the expense of GaSb crystalline phase which was reduced. Extended X-ray absorption fine structure (EXAFS) measurements at the Ga and Ge K-edges revealed changes in their local atomic environments as a function of the annealing temperature. Simulations unveil a tetrahedral configuration in the amorphous state and octahedral configuration in the crystalline state for Ge atoms, while Ga is four-fold coordinated in both as-deposited and annealed samples.

  7. Interface Reactions and Electrical Characteristics of Au/GaSb Contacts

    SciTech Connect (OSTI)

    H. Ehsani; R.J. Gutmann; G.W. Charache

    2000-07-07

    The reaction of Au with GaSb occurs at a relatively low temperature (100 C). Upon annealing, a AuSb{sub 2} compound and several Au-Ga phases are produced. Phase transitions occur toward higher Ga concentration with increasing annealing temperatures. Furthermore, the depth of the contact also increases with increased annealing temperature. They found that the AuSb{sub 2} compound forms on the GaSb surface, with the compound crystal partially ordered with respect to the substrate. The transition of Schottky- to ohmic-contact behavior in Au/n-type GaSb occurs simultaneously with the formation of the AuGa compound at about a 250 C annealing temperature. This ohmic contact forms without the segregation of dopants at the metallic compound/GaSb interface. Therefore it is postulated that transition from Schottky- to ohmic-contact behavior is obtained through a series of tunneling transitions of electrons through defects in the depletion region in the Au/n-type GaSb contacts. Contact resistivities of 6-7 x 10{sup -6} {Omega}-cm{sup 2} were obtained with the annealing temperature between 300 and 350 C for 30 seconds. In Au/p-type GaSb contacts, the resistivity was independent of the annealing temperature. This suggested that the carrier transport in p-type contact dominated by thermionic emission.

  8. Development of an electronic device quality aluminum antimonide (AlSb) semiconductor for solar cell applications

    SciTech Connect (OSTI)

    Sherohman, John W; Yee, Jick Hong; Combs, III, Arthur W

    2014-11-11

    Electronic device quality Aluminum Antimonide (AlSb)-based single crystals produced by controlled atmospheric annealing are utilized in various configurations for solar cell applications. Like that of a GaAs-based solar cell devices, the AlSb-based solar cell devices as disclosed herein provides direct conversion of solar energy to electrical power.

  9. HIA 2015 DOE Zero Energy Ready Home Case Study: Clifton View Homes, Marine Drive and Port Hadlcok, Coupeville and Port Hadlock WA

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Homes Marine Drive and Port Hadlock Coupeville, WA Port Hadlock, WA DOE ZERO ENERGY READY HOME(tm) The U.S. Department of Energy invites home builders across the country to meet the extraordinary levels of excellence and quality specified in DOE's Zero Energy Ready Home program (formerly known as Challenge Home). Every DOE Zero Energy Ready Home starts with ENERGY STAR Certified Homes Version 3.0 for an energy-efficient home built on a solid foundation of building science research. Advanced

  10. Ab initio calculation of the thermodynamic properties of InSb under intense laser irradiation

    SciTech Connect (OSTI)

    Feng, ShiQuan; Cheng, XinLu; Key Laboratory of High Energy Density Physics and Technology of Ministry of Education, Sichuan University, Chengdu, 610064 ; Zhao, JianLing; Zhang, Hong

    2013-07-28

    In this paper, phonon spectra of InSb at different electronic temperatures are presented. Based on the phonon dispersion relationship, we further perform a theoretical investigation of the thermodynamic properties of InSb under intense laser irradiation. The phonon entropy, phonon heat capacity, and phonon contribution to Helmholtz free energy and internal energy of InSb are calculated as functions of temperature at different electronic temperatures. The abrupt change in the phonon entropy- temperature curve from T{sub e} = 0.75 to 1.0 eV provides an indication of InSb undergoing a phase transition from solid to liquid. It can be considered as a collateral evidence of non-thermal melting for InSb under intense electronic excitation effect.

  11. DWPF SIMULANT CPC STUDIES FOR SB7B

    SciTech Connect (OSTI)

    Koopman, D.

    2011-11-01

    Lab-scale DWPF simulations of Sludge Batch 7b (SB7b) processing were performed. Testing was performed at the Savannah River National Laboratory - Aiken County Technology Laboratory (SRNL-ACTL). The primary goal of the simulations was to define a likely operating window for acid stoichiometry for the DWPF Sludge Receipt and Adjustment Tank (SRAT). In addition, the testing established conditions for the SRNL Shielded Cells qualification simulation of SB7b-Tank 40 blend, supported validation of the current glass redox model, and validated the coupled process flowsheet at the nominal acid stoichiometry. An acid window of 105-140% by the Koopman minimum acid (KMA) equation (107-142% DWPF Hsu equation) worked for the sludge-only flowsheet. Nitrite was present in the SRAT product for the 105% KMA run at 366 mg/kg, while SME cycle hydrogen reached 94% of the DWPF Slurry Mix Evaporator (SME) cycle limit in the 140% KMA run. The window was determined for sludge with added caustic (0.28M additional base, or roughly 12,000 gallons 50% NaOH to 820,000 gallons waste slurry). A suitable processing window appears to be 107-130% DWPF acid equation for sludge-only processing allowing some conservatism for the mapping of lab-scale simulant data to full-scale real waste processing including potentially non-conservative noble metal and mercury concentrations. This window should be usable with or without the addition of up to 7,000 gallons of caustic to the batch. The window could potentially be wider if caustic is not added to SB7b. It is recommended that DWPF begin processing SB7b at 115% stoichiometry using the current DWPF equation. The factor could be increased if necessary, but changes should be made with caution and in small increments. DWPF should not concentrate past 48 wt.% total solids in the SME cycle if moderate hydrogen generation is occurring simultaneously. The coupled flowsheet simulation made more hydrogen in the SRAT and SME cycles than the sludge-only run with the

  12. Illinois SB 1987: the Clean Coal Portfolio Standard Law

    SciTech Connect (OSTI)

    2009-01-15

    On January 12, 2009, Governor Rod Blagojevich signed SB 1987, the Clean Coal Portfolio Standard Law. The legislation establishes emission standards for new coal-fueled power plants power plants that use coal as their primary feedstock. From 2009-2015, new coal-fueled power plants must capture and store 50 percent of the carbon emissions that the facility would otherwise emit; from 2016-2017, 70 percent must be captured and stored; and after 2017, 90 percent must be captured and stored. SB 1987 also establishes a goal of having 25 percent of electricity used in the state to come from cost-effective coal-fueled power plants that capture and store carbon emissions by 2025. Illinois is the first state to establish a goal for producing electricity from coal-fueled power plants with carbon capture and storage (CCS). To support the commercial development of CCS technology, the legislation guarantees purchase agreements for the first Illinois coal facility with CCS technology, the Taylorville Energy Center (TEC); Illinois utilities are required to purchase at least 5 percent of their electricity supply from the TEC, provided that customer rates experience only modest increases. The TEC is expected to be completed in 2014 with the ability to capture and store at least 50 percent of its carbon emissions.

  13. Effect of arsenic on the optical properties of GaSb-based type II quantum wells with quaternary GaInAsSb layers

    SciTech Connect (OSTI)

    Janiak, F. Motyka, M.; S?k, G.; Dyksik, M.; Ryczko, K.; Misiewicz, J.; Weih, R.; Hfling, S.; Kamp, M.; Patriarche, G.

    2013-12-14

    Optical properties of molecular beam epitaxially grown type II W shaped GaSb/AlSb/InAs/GaIn(As)Sb/InAs/AlSb/GaSb quantum wells (QWs) designed for the active region of interband cascade lasers have been investigated. Temperature dependence of Fourier-transformed photoluminescence and photoreflectance was employed to probe the effects of addition of arsenic into the original ternary valence band well of GaInSb. It is revealed that adding arsenic provides an additional degree of freedom in terms of band alignment and strain tailoring and allows enhancing the oscillator strength of the active type II transition. On the other hand, however, arsenic incorporation apparently also affects the structural and optical material quality via generating carrier trapping states at the interfaces, which can deteriorate the radiative efficiency. These have been evidenced in several spectroscopic features and are also confirmed by cross-sectional transmission electron microscopy images. While arsenic incorporation into type II QWs is a powerful heterostructure engineering tool for optoelectronic devices, a compromise has to be found between ideal band structure properties and high quality morphological properties.

  14. Evaluation of contaminant flux rates from sediments of Sinclair Inlet, WA, using a benthic flux sampling device. Final report

    SciTech Connect (OSTI)

    Chadwick, D.B.; Lieberman, S.H.; Reimers, C.E.; Young, D.

    1993-02-01

    A Benthic Flux Sampling Device (BFSD) was demonstrated on site to determine the mobility of contaminants in sediments off the Puget Sound Naval Shipyard (PSNS) in Sinclair Inlet, WA. Quantification of toxicant flux from the sediments will support ongoing assessment studies and facilitate the design of appropriate remediation strategies, if required. In general, where release of contaminants was found, the measured rates do not represent a significant source relative to other major inputs such as sewer discharges, nonpoint source runoff, and marinas. They may, however, represent an exposure pathway for benthic biota with a subsequent potential for toxicological effects and/or bioaccumulation. Environmental assessment, CIVAPP:Toxicity, CIVAPP:Marine chemistry, Hazardous waste.

  15. Electrochemical studies of CNT/Si–SnSb nanoparticles for lithium ion batteries

    SciTech Connect (OSTI)

    Nithyadharseni, P.; Reddy, M.V.; Nalini, B.; Ravindran, T.R.; Pillai, B.C.; Kalpana, M.; Chowdari, B.V.R.

    2015-10-15

    Highlights: • Si added SnSb and CNT exhibits very low particle size of below 30 nm • A strong PL quenching due to the addition of Si to SnSb. • Electrochemical studies show CNT added SnSb shows good capacity retention. - Abstract: Nano-structured SnSb, SnSb–CNT, Si–SnSb and Si–SnSb–CNT alloys were synthesized from metal chlorides of Sn, Sb and Si via reductive co-precipitation technique using NaBH{sub 4} as reducing agent. The as prepared compounds were characterized by various techniques such as X-ray diffraction (XRD), scanning electron microscope (SEM), Raman, Fourier transform infra-red (FTIR) and photoluminescence (PL) spectroscopy. The electrochemical performances of the compounds were characterized by galvanostatic cycling (GC) and cyclic voltammetry (CV). The Si–SnSb–CNT compound shows a high reversible capacity of 1200 mAh g{sup −1}. However, the rapid capacity fading was observed during cycling. In contrast, SnSb–CNT compound showed a high reversible capacity of 568 mAh g{sup −1} at 30th cycles with good cycling stability. The improved reversible capacity and cyclic performance of the SnSb–CNT compound could be attributed to the nanosacle dimension of SnSb particles and the structural advantage of CNTs.

  16. Structural properties of Sb2S3 under pressure: Evidence of an electronic topological transition

    DOE PAGES-Beta [OSTI]

    Efthimiopoulos, Ilias; Buchan, Cienna; Wang, Yuejian

    2016-04-06

    High-pressure Raman spectroscopy and x-ray diffraction of Sb2S3 up to 53 GPa reveals two phase transitions at 5 GPa and 15 GPa. The first transition is evidenced by noticeable compressibility changes in distinct Raman-active modes, in the lattice parameter axial ratios, the unit cell volume, as well as in specific interatomic bond lengths and bond angles. By taking into account relevant results from the literature, we assign these effects to a second-order isostructural transition arising from an electronic topological transition in Sb2S3 near 5 GPa. Close comparison between Sb2S3 and Sb2S3 up to 10 GPa reveals a slightly diverse structuralmore » behavior for these two compounds after the isostructural transition pressure. This structural diversity appears to account for the different pressure-induced electronic behavior of Sb2S3 and Sb2S3 up to 10 GPa, i.e. the absence of an insulator-metal transition in Sb2S3 up to that pressure. Lastly, the second high-pressure modification appearing above 15 GPa appears to trigger a structural disorder at ~20 GPa; full decompression from 53 GPa leads to the recovery of an amorphous state.« less

  17. Pressure dependence of donor excitation spectra in AlSb

    SciTech Connect (OSTI)

    Hsu, L.; McCluskey, M.D.; Haller, E.E.

    2002-01-16

    We have investigated the behavior of ground to bound excited-state electronic transitions of Se and Te donors in AlSb as a function of hydrostatic pressure. Using broadband far-infrared Fourier transform spectroscopy, we observe qualitatively different behaviors of the electronic transition energies of the two donors. While the pressure derivative of the Te transition energy is small and constant, as might be expected for a shallow donor, the pressure derivatives of the Se transition energies are quadratic and large at low pressures, indicating that Se is actually a deep donor. In addition, at pressures between 30 and 50 kbar, we observe evidence of an anti-crossing between one of the selenium electronic transitions and a two-phonon mode.

  18. In-situ TEM study of sodiation and failure mechanism of Sb anodes...

    Office of Scientific and Technical Information (OSTI)

    Title: In-situ TEM study of sodiation and failure mechanism of Sb anodes. Abstract not provided. Authors: XueHai Tan ; Jungjohann, Katherine Leigh ; Mook, William ; David Mitlin ...

  19. A new n-type half-Heusler thermoelectric material NbCoSb (Journal...

    Office of Scientific and Technical Information (OSTI)

    new n-type half-Heusler thermoelectric material NbCoSb Citation Details In-Document Search This content will become publicly available on June 15, 2017 Title: A new n-type ...

  20. A new n-type half-Heusler thermoelectric material NbCoSb (Journal...

    Office of Scientific and Technical Information (OSTI)

    A new n-type half-Heusler thermoelectric material NbCoSb This content will become publicly available on June 15, 2017 Prev Next Title: A new n-type half-Heusler ...

  1. Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)

    SciTech Connect (OSTI)

    Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel; Que, Christopher T.; Yamamoto, Kohji; Tani, Masahiko

    2012-12-15

    Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

  2. Ultrafast Terahertz-Induced Response of GeSbTe Phase-Change Materials...

    Office of Scientific and Technical Information (OSTI)

    Title: Ultrafast Terahertz-Induced Response of GeSbTe Phase-Change Materials ... Resource Relation: Journal Name: Appl. Phys. Lett.; Journal Volume: 104; Journal Issue: 25 Research ...

  3. Material and device characteristics of InAs/GaAsSb sub-monolayer quantum dot solar cells

    SciTech Connect (OSTI)

    Kim, Yeongho; Ban, Keun-Yong Zhang, Chaomin; Honsberg, Christiana B.

    2015-10-12

    We have studied the material and photovoltaic characteristics of InAs/GaAsSb sub-monolayer quantum dot solar cells (QDSCs) with different Sb contents of 0%, 5%, 15%, and 20%. All QDSCs exhibit an extended external quantum efficiency (EQE) response in the wavelength range of 960–1000 nm that corresponds to sub-bandgap photon absorption. As Sb content increases from 5% to 20%, the cutoff wavelength in the EQE extends towards longer wavelength whilst the EQE in the wavelength region of 300–880 nm is lowered due to increased defect density. Compared to the QDSC (Sb 0%), an Sb incorporation of 5% enhances the short-circuit current density from 20.65 to 22.15 mA/cm{sup 2} induced by Sb surfactant effect. Since the open-circuit voltage and fill factor of the QDSC (Sb 5%) are comparable to those of the QDSC (Sb 0%), an enhancement in solar cell efficiency (10.5%) of the QDSC (Sb 5%) is observed. Further increasing Sb content to 15% and 20% results in the degradation of solar cell performance due to increased nonradiative recombination and large valence band offset in a type-II band line-up.

  4. Structure and magnetic properties of LnMnSbO ( Ln=La and Ce)

    DOE PAGES-Beta [OSTI]

    Zhang, Qiang; Kumar, C. M. N.; Tian, Wei; Dennis, Kevin W.; Goldman, Alan I.; Vaknin, David

    2016-03-11

    Here, a neutron powder diffraction (NPD) study of LnMnSbO (Ln = La or Ce) reveals differences between the magnetic ground state of the two compounds due to the strong Ce-Mn coupling compared to La-Mn. The two compounds adopt the P4/nmm space group down to 2 K, and whereas magnetization measurements do not show obvious anomaly at high temperatures, NPD reveals a C-type antiferromagnetic (AFM) order below TN = 255K for LaMnSbO and 240 K for CeMnSbO. While the magnetic structure of LaMnSbO is preserved to base temperature, a sharp transition at TSR = 4.5K is observed in CeMnSbO due tomore » a spin-reorientation (SR) transition of the Mn2+ magnetic moments from pointing along the c axis to the ab plane. The SR transition in CeMnSbO is accompanied by a simultaneous long-range AFM ordering of the Ce moments, which indicates that the Mn SR transition is driven by the Ce-Mn coupling. The ordered moments are found to be somewhat smaller than those expected for Mn2+ (S = 5/2) in insulators, but large enough to suggest that these compounds belong to the class of local-moment antiferromagnets. The lower TN found in these two compounds compared to the As-based counterparts (TN = 317 for LaMnAsO, TN = 347K for CeMnAsO) indicates that the Mn-Pn (Pn=As or Sb) hybridization that mediates the superexchange Mn-Pn-Mn coupling is weaker for the Sb-based compounds.« less

  5. AlSb/InAs HIGH ELECTRON MOBILITY TRANSISTORS - Energy Innovation Portal

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Electricity Transmission Electricity Transmission Advanced Materials Advanced Materials Find More Like This Return to Search AlSb/InAs HIGH ELECTRON MOBILITY TRANSISTORS Naval Research Laboratory Contact NRL About This Technology Technology Marketing Summary The Naval Research Laboratory (NRL) has developed materials growth and fabrication technology for the manufacture of high-speed, low power AlSb/InAs high electron mobility transistors (HEMTs) that exhibit state-of-the-art low-power

  6. Ultrafast Terahertz-Induced Response of GeSbTe Phase-Change Materials

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect Journal Article: Ultrafast Terahertz-Induced Response of GeSbTe Phase-Change Materials Citation Details In-Document Search Title: Ultrafast Terahertz-Induced Response of GeSbTe Phase-Change Materials Authors: Shu, Michael J. ; Zalden, Peter ; Chen, Frank ; Weems, Ben ; Chatzakis, Ioannis ; Xiong, Feng ; Jeyasingh, Rakesh ; Hoffmann, Matthias C. ; Pop, Eric ; Wong, H.-S.Philip ; Wuttig, Matthias ; Lindenberg, Aaron M. Publication Date: 2014-07-08 OSTI

  7. Electrical properties of n-type GaSb substrates and p-type GaSb buffer layers for InAs/InGaSb superlattice infrared detectors

    SciTech Connect (OSTI)

    Mitchel, W. C. Haugan, H. J.; Mou, Shin; Brown, G. J.; Elhamri, S.; Berney, R.

    2015-09-15

    Lightly doped n-type GaSb substrates with p-type GaSb buffer layers are the preferred templates for growth of InAs/InGaSb superlattices used in infrared detector applications because of relatively high infrared transmission and a close lattice match to the superlattices. We report here temperature dependent resistivity and Hall effect measurements of bare substrates and substrate-p-type buffer layer structures grown by molecular beam epitaxy. Multicarrier analysis of the resistivity and Hall coefficient data demonstrate that high temperature transport in the substrates is due to conduction in both the high mobility zone center Γ band and the low mobility off-center L band. High overall mobility values indicate the absence of close compensation and that improved infrared and transport properties were achieved by a reduction in intrinsic acceptor concentration. Standard transport measurements of the undoped buffer layers show p-type conduction up to 300 K indicating electrical isolation of the buffer layer from the lightly n-type GaSb substrate. However, the highest temperature data indicate the early stages of the expected p to n type conversion which leads to apparent anomalously high carrier concentrations and lower than expected mobilities. Data at 77 K indicate very high quality buffer layers.

  8. Antiferromagnetic ordering in the doped Kondo insulator CeRhSb

    SciTech Connect (OSTI)

    Menon, L.; Malik, S.K.

    1997-06-01

    CeRhSb, the so-called {open_quotes}Kondo insulator,{close_quotes} is a mixed-valent compound showing a gap formation in the electronic density of states. On the other hand, CePdSb is ferromagnetically ordered with a Curie temperature of {approximately}17 K. We have carried out magnetic susceptibility and electrical resistivity measurements on CeRh{sub 1{minus}x}Pd{sub x}Sb (0{le}x{le}1.0), to study the ground-state properties of this system. For small Pd doping in CeRhSb, up to 20{percent}, the gap continually diminishes and no magnetic ordering is observed down to 2 K. In the region 0.3{le}x{le}0.4, as soon as the gap is suppressed, an antiferromagnetic ground state is observed. In the region 0.5{le}x{lt}0.7, the compounds are not single phase. At the CePdSb end, in the region 0.7{le}x{le}1, the ground state is ferromagnetic. The observation of an antiferromagnetic phase in the phase diagram of CeRh{sub 1{minus}x}Pd{sub x}Sb, where neither end is antiferromagnetic, is interesting and is discussed in the light of some recent theoretical models. {copyright} {ital 1997} {ital The American Physical Society}

  9. The magnetic structure of EuCu2Sb2

    DOE PAGES-Beta [OSTI]

    Ryan, D. H.; Cadogan, J. M.; Anand, V. K.; Johnston, D. C.; Flacau, R.

    2015-05-06

    Antiferromagnetic ordering of EuCu2Sb2 which forms in the tetragonal CaBe2Ge2-type structure (space group P4/nmm #129) has been studied using neutron powder diffraction and 151Eu Mössbauer spectroscopy. The room temperature 151Eu isomer shift of –12.8(1) mm/s shows the Eu to be divalent, while the 151Eu hyperfine magnetic field (Bhf) reaches 28.7(2) T at 2.1 K, indicating a full Eu2+ magnetic moment. Bhf(T) follows a smoothmore » $$S=\\frac{7}{2}$$ Brillouin function and yields an ordering temperature of 5.1(1) K. Refinement of the neutron diffraction data reveals a collinear A-type antiferromagnetic arrangement with the Eu moments perpendicular to the tetragonal c-axis. As a result, the refined Eu magnetic moment at 0.4 K is 7.08(15) μB which is the full free-ion moment expected for the Eu2+ ion with $$S=\\frac{7}{2}$$ and a spectroscopic splitting factor of g = 2.« less

  10. Wa s h i n g t o n U n i v e r s i t y i n S t . L o...

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Wa s h i n g t o n U n i v e r s i t y i n S t . L o u i s - - P A R C ' s H o s t & A d mi n s t r a t i v e H o me - B o b B l a n k e n s h i p , P A R C D i r e c t o r - D e ...

  11. Interconnection of thermal parameters, microstructure and mechanical properties in directionally solidified Sn–Sb lead-free solder alloys

    SciTech Connect (OSTI)

    Dias, Marcelino; Costa, Thiago; Rocha, Otávio; Spinelli, José E.; Cheung, Noé; Garcia, Amauri

    2015-08-15

    Considerable effort is being made to develop lead-free solders for assembling in environmental-conscious electronics, due to the inherent toxicity of Pb. The search for substitute alloys of Pb–Sn solders has increased in order to comply with different soldering purposes. The solder must not only meet the expected levels of electrical performance but may also have appropriate mechanical strength, with the absence of cracks in the solder joints. The Sn–Sb alloy system has a range of compositions that can be potentially included in the class of high temperature solders. This study aims to establish interrelations of solidification thermal parameters, microstructure and mechanical properties of Sn–Sb alloys (2 wt.%Sb and 5.5 wt.%Sb) samples, which were directionally solidified under cooling rates similar to those of reflow procedures in industrial practice. A complete high-cooling rate cellular growth is shown to be associated with the Sn–2.0 wt.%Sb alloy and a reverse dendrite-to-cell transition is observed for the Sn–5.5 wt.%Sb alloy. Strength and ductility of the Sn–2.0 wt.%Sb alloy are shown not to be affected by the cellular spacing. On the other hand, a considerable variation in these properties is associated with the cellular region of the Sn–5.5 wt.%Sb alloy casting. - Graphical abstract: Display Omitted - Highlights: • The microstructure of the Sn–2 wt.%Sb alloy is characterized by high-cooling rates cells. • Reverse dendrite > cell transition occurs for Sn–5.5 wt.%Sb alloy: cells prevail for cooling rates > 1.2 K/s. • Sn–5.5 wt.%Sb alloy: the dendritic region occurs for cooling rates < 0.9 K/s. • Sn–5.5 wt.%Sb alloy: tensile properties are improved with decreasing cellular spacing.

  12. Solvothermal synthesis of graphene-Sb{sub 2}S{sub 3} composite and the degradation activity under visible light

    SciTech Connect (OSTI)

    Tao, Wenguang; Chang, Jiuli; Wu, Dapeng; Gao, Zhiyong; Duan, Xiaoli; Xu, Fang; Engineering Technology Research Center of Motive Power and Key Materials, Henan, 453007 ; Jiang, Kai; Engineering Technology Research Center of Motive Power and Key Materials, Henan, 453007

    2013-02-15

    Graphical abstract: Display Omitted Highlights: ? Graphene-Sb{sub 2}S{sub 3} composites were synthesized through a facile solvothermal method. ? Hydroxyl radicals are the main species responsible for the photodegradation activity. ? Graphene-Sb{sub 2}S{sub 3} demonstrated dramatically improved visible light degradation activity. -- Abstract: Novel graphene-Sb{sub 2}S{sub 3} (G-Sb{sub 2}S{sub 3}) composites were synthesized via a facile solvothermal method with graphene oxide (GO), SbCl{sub 3} and thiourea as the reactants. GO played an important role in controlling the size and the distribution of the formed Sb{sub 2}S{sub 3} nanoparticles on the graphene sheets with different density. Due to the negative surface charge, smaller Sb{sub 2}S{sub 3} particles size and efficient electrons transfer from Sb{sub 2}S{sub 3} to graphene, the composites demonstrated improved photodegradation activity on rhodamine B (RhB). Among these composites, the product G-Sb{sub 2}S{sub 3} 0.1, which was synthesized with the GO concentration of 0.1 mg/mL, exhibited the highest photodegradation activity owing to the considerable density of Sb{sub 2}S{sub 3} nanoparticles onto graphene sheet free of aggregation. Hydroxyl radicals (OH) derived from conduction band (CB) electrons of Sb{sub 2}S{sub 3} is suggested to be responsible for the photodegradation of RhB. The high visible light degradation activity and the satisfactory cycling stability made the as-prepared G-Sb{sub 2}S{sub 3} 0.1 an applicable photocatalyst.

  13. Lattice-registered growth of GaSb on Si (211) with molecular beam epitaxy

    SciTech Connect (OSTI)

    Hosseini Vajargah, S.; Botton, G. A.; Ghanad-Tavakoli, S.; Preston, J. S.; Kleiman, R. N.

    2012-11-01

    A GaSb film was grown on a Si(211) substrate using molecular beam epitaxy indicating full lattice relaxation as well as full lattice registration and dislocation-free growth in the plane perpendicular to the [01 - 1]-direction. Heteroepitaxy of GaSb on a Si(211) substrate is dominated by numerous first order and multiple higher order micro-twins. The atomic-resolved structural study of GaSb films by high-angle annular dark-field scanning transmission electron microscopy reveals that slight tilt, along with twinning, favors the lattice registry to Si(211) substrates. Preferential bonding of impinging Ga and Sb atoms at the interface due to two distinctive bonding sites on the Si(211) surface enables growth that is sublattice-ordered and free of anti-phase boundaries. The role of the substrate orientation on the strain distribution of GaSb epilayers is further elucidated by investigating the local change in the lattice parameter using the geometric phase analysis method and hence effectiveness of the lattice tilting in reducing the interfacial strain was confirmed further.

  14. Sb{sub 2}O{sub 4} at high pressures and high temperatures

    SciTech Connect (OSTI)

    Orosel, D.; Balog, P.; Liu, H.; Qian, J.; Jansen, M. . E-mail: m.jansen@fkf.mpg.de

    2005-09-15

    Investigations on Sb{sub 2}O{sub 4} at high pressure and temperature have been performed up to 600{sup o}C and up to 27.3GPa. The so-called 'high temperature' phase ({beta}-Sb{sub 2}O{sub 4}) was obtained following pressure increase at ambient temperature and at relatively low temperatures. Thus, in contrast to previous perceptions, {beta}-Sb{sub 2}O{sub 4} is the modification more stable at high pressures, i.e., at low temperatures. The fact that the metastable {alpha}-form is typically obtained through the conventional way of preparation has to be attributed to kinetic effects. The pressure-induced phase transitions have been monitored by in-situ X-ray diffraction in a diamond anvil cell, and confirmed ex-situ, by X-ray diffraction at ambient conditions, following temperature decrease and decompression in large volume devices. Bulk modulus values have been derived from the pressure-induced volume changes at room temperature, and are 143GPa for {alpha}-Sb{sub 2}O{sub 4} and 105GPa for the {beta}-Sb{sub 2}O{sub 4}.

  15. Performance Study of K2CsSb Photocathode Inside a DC High Voltage Gun

    SciTech Connect (OSTI)

    McCarter J. L.; Rao T.; Smedley, J.; Grames, J.; Mammei, R.; Poelker, M.; Suleiman, R.

    2011-09-01

    In the past decade, there has been considerable interest in the generation of tens of mA average current in a photoinjector. Until recently, GaAs:Cs cathodes and K{sub 2}CsSb cathodes have been tested successfully in DC and RF injectors respectively for this application. Our goal is to test the K{sub 2}CsSb photocathode inside a DC gun. Since the multialkali cathode is a compound with constant characteristics over its entire thickness, we anticipate that the lifetime issues seen in GaAs:Cs due to surface damage by ion bombardment would be minimized. Hence successful operation of the K{sub 2}CsSb cathode in a DC gun could lead to a relatively robust electron source capable of delivering ampere level currents. In order to test the performance of a K{sub 2}CsSb cathode in a DC gun, we have designed and built a load lock system that allows the fabrication of the cathode at Brookhaven National Lab (BNL) and its testing at Jefferson Lab (JLab). In this paper, we will present the performance of the K{sub 2}CsSb photocathode in the preparation chamber and in the DC gun.

  16. Fragile structural transition in Mo3Sb7

    SciTech Connect (OSTI)

    Yan, Jiaqiang -Q.; McGuire, Michael A; May, Andrew F; Parker, David S.; Mandrus, D. G.; Sales, Brian C.

    2015-08-10

    Mo3Sb7 single crystals lightly doped with Cr, Ru, or Te are studied in order to explore the interplay between superconductivity, magnetism, and the cubic-tetragonal structural transition. The structural transition at 53 K is extremely sensitive to Ru or Te substitution which introduces additional electrons, but robust against Cr substitution. We observed no sign of a structural transition in superconducting Mo2.91Ru0.09Sb7 and Mo3Sb6.975Te0.025. In contrast, 3 at.% Cr doping only slightly suppresses the structural transition to 48 K while leaving no trace of superconductivity above 1.8 K. Analysis of magnetic properties suggests that the interdimer interaction in Mo3Sb7 is near a critical value and essential for the structural transition. Futhermore, all dopants suppress the superconductivity of Mo3Sb7. The tetragonal structure is not necessary for superconductivity.

  17. Superconductivity in strong spin orbital coupling compound Sb2Se3

    DOE PAGES-Beta [OSTI]

    Kong, P. P.; Sun, F.; Xing, L. Y.; Zhu, J.; Zhang, S. J.; Li, W. M.; Liu, Q. Q.; Wang, X. C.; Feng, S. M.; Yu, X. H.; et al

    2014-10-20

    Recently, A2B3 type strong spin orbital coupling compounds such as Bi2Te3, Bi2Se3 and Sb2Te3 were theoretically predicated to be topological insulators and demonstrated through experimental efforts. The counterpart compound Sb2Se3 on the other hand was found to be topological trivial, but theoretical studies indicated that the pressure might induce Sb2Se3 into a topological nontrivial state. We report on the discovery of superconductivity in Sb2Se3 single crystal induced via pressure. Our experiments indicated that Sb2Se3 became superconductive at high pressures above 10 GPa proceeded by a pressure induced insulator to metal like transition at ~3 GPa which should be related tomore » the topological quantum transition. The superconducting transition temperature (TC) increased to around 8.0 K with pressure up to 40 GPa while it keeps ambient structure. As a result, high pressure Raman revealed that new modes appeared around 10 GPa and 20 GPa, respectively, which correspond to occurrence of superconductivity and to the change of TC slop as the function of high pressure in conjunction with the evolutions of structural parameters at high pressures.« less

  18. Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer

    DOE Patents [OSTI]

    Spahn, O.B.; Lear, K.L.

    1998-03-10

    The semiconductor structure comprises a plurality of semiconductor layers formed on a substrate including at least one layer of a III-V compound semiconductor alloy comprising aluminum (Al) and antimony (Sb), with at least a part of the AlSb-alloy layer being chemically converted by an oxidation process to form superposed electrically insulating and electrically conducting portions. The electrically insulating portion formed from the AlSb-alloy layer comprises an oxide of aluminum (e.g., Al{sub 2}O{sub 3}), while the electrically conducting portion comprises Sb. A lateral oxidation process allows formation of the superposed insulating and conducting portions below monocrystalline semiconductor layers for forming many different types of semiconductor structures having particular utility for optoelectronic devices such as light-emitting diodes, edge-emitting lasers, vertical-cavity surface-emitting lasers, photodetectors and optical modulators (waveguide and surface normal), and for electronic devices such as heterojunction bipolar transistors, field-effect transistors and quantum-effect devices. The invention is expected to be particularly useful for forming light-emitting devices for use in the 1.3--1.6 {mu}m wavelength range, with the AlSb-alloy layer acting to define an active region of the device and to effectively channel an electrical current therein for efficient light generation. 10 figs.

  19. Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer

    DOE Patents [OSTI]

    Spahn, Olga B.; Lear, Kevin L.

    1998-01-01

    A semiconductor structure. The semiconductor structure comprises a plurality of semiconductor layers formed on a substrate including at least one layer of a III-V compound semiconductor alloy comprising aluminum (Al) and antimony (Sb), with at least a part of the AlSb-alloy layer being chemically converted by an oxidation process to form superposed electrically insulating and electrically conducting portions. The electrically insulating portion formed from the AlSb-alloy layer comprises an oxide of aluminum (e.g. Al.sub.2 O.sub.3), while the electrically conducting portion comprises Sb. A lateral oxidation process allows formation of the superposed insulating and conducting portions below monocrystalline semiconductor layers for forming many different types of semiconductor structures having particular utility for optoelectronic devices such as light-emitting diodes, edge-emitting lasers, vertical-cavity surface-emitting lasers, photodetectors and optical modulators (waveguide and surface normal), and for electronic devices such as heterojunction bipolar transistors, field-effect transistors and quantum-effect devices. The invention is expected to be particularly useful for forming light-emitting devices for use in the 1.3-1.6 .mu.m wavelength range, with the AlSb-alloy layer acting to define an active region of the device and to effectively channel an electrical current therein for efficient light generation.

  20. Elastic strains at interfaces in InAs/AlSb multilayer structures for quantum cascade lasers

    SciTech Connect (OSTI)

    Nicolai, J.; Gatel, Ch.; Warot-Fonrose, B.; Ponchet, A.; Teissier, R.; Baranov, A. N.; Magen, C.

    2014-01-20

    InAs/AlSb multilayers similar to those used in quantum cascade lasers have been grown by molecular beam epitaxy on (001) InAs substrates. Elastic strain is investigated by high resolution transmission electron microscopy. Thin interfacial regions with lattice distortions significantly different from the strain of the AlSb layers themselves are revealed from the geometrical phase analysis. Strain profiles are qualitatively compared to the chemical contrast of high angle annular dark field images obtained by scanning transmission electron microscopy. The strain and chemical profiles are correlated with the growth sequences used to form the interfaces. Tensile strained AlAs-like interfaces tend to form predominantly due to the high thermal stability of AlAs. Strongly asymmetric interfaces, AlAs-rich and (Al, In)Sb, respectively, can also be achieved by using appropriate growth sequences.

  1. Natural nanostructure and superlattice nanodomains in AgSbTe{sub 2}

    SciTech Connect (OSTI)

    Carlton, Christopher E.; De Armas, Ricardo; Shao-Horn, Yang E-mail: shaohorn@mit.edu; Ma, Jie; May, Andrew F.; Delaire, Olivier E-mail: shaohorn@mit.edu

    2014-04-14

    AgSbTe{sub 2} has long been of interest for thermoelectric applications because of its favorable electronic properties and its low lattice thermal conductivity of ?0.7?W/mK. In this work, we report new findings from a high-resolution transmission electron microscopy study revealing two nanostructures in single crystal Ag{sub 1?x}Sb{sub 1+x}Sb{sub 2+x} (with x?=?0, 0.1, 0.2); (i) a rippled natural nanostructure with a period of ?2.55?nm and (ii) superlattice ordered nanodomains consistent with cation ordering predicted in previous density functional theory studies. These nanostructures, combined with point-defects, probably serve as sources of scattering for phonons, thereby yielding a low lattice thermal conductivity over a wide temperature range.

  2. The Crystallization Behavior of Stochiometric and Off-stochiometric Ga-Sb-Te Materials for Phase-Change Memory

    SciTech Connect (OSTI)

    H Cheng; S Raoux; J Jordan-Sweet

    2011-12-31

    The stoichiometric Ga{sub 4}Sb{sub 6}Te{sub 3} and Ga-Sb materials were systematically studied. The alloy Ga{sub 4}Sb{sub 6}Te{sub 3} shows a fast crystallization speed, very high crystallization temperature, T{sub x}, and high electrical contrast. Although stoichiometric GaSb has similar performance and even faster crystallization speed, the electrical contrast is much lower. The other off-stoichiometric compounds we studied all have higher T{sub x} than Ge{sub 2}Sb{sub 2}Te{sub 5} indicating a good amorphous stability. By raising the Sb/Te ratio with GaSb incorporation, T{sub x} and the recrystallization time of melt-quenched, amorphous samples can be effectively increased. The stoichiometric Ga{sub 4}Sb{sub 6}Te{sub 3} with less likelihood of phase-segregation compared to nonstoichiometric compounds is a promising candidate for phase-change memory.

  3. Evaluation Of Glass Density To Support The Estimation Of Fissile Mass Loadings From Iron Concentrations In SB8 Glasses

    SciTech Connect (OSTI)

    Edwards, T. B.; Peeler, D. K.; Kot, W. K.; Gan, H.; Pegg, I. L.

    2013-04-30

    The Department of Energy Savannah River (DOE-SR) has provided direction to Savannah River Remediation (SRR) to maintain fissile concentration in glass below 897 g/m{sup 3}. In support of that guidance, the Savannah River National Laboratory (SRNL) provided a technical basis and a supporting Microsoft Excel spreadsheet for the evaluation of fissile loading in Sludge Batch 5 (SB5), Sludge Batch 6 (SB6), Sludge Batch 7a (SB7a), and Sludge Batch 7b (SB7b) glass based on the iron (Fe) concentration in glass as determined by the measurements from the Slurry Mix Evaporator (SME) acceptability analysis. SRR has since requested that the necessary density information be provided to allow SRR to update the Excel spreadsheet so that it may be used to maintain fissile concentration in glass below 897 g/m{sup 3} during the processing of Sludge Batch 8 (SB8). One of the primary inputs into the fissile loading spreadsheet includes an upper bound for the density of SB8-based glasses. Thus, these bounding density values are to be used to assess the fissile concentration in this glass system. It should be noted that no changes are needed to the underlying structure of the Excel-based spreadsheet to support fissile assessments for SB8. However, SRR should update the other key inputs to the spreadsheet that are based on fissile and Fe concentrations reported from the SB8 Waste Acceptance Product Specification (WAPS) sample.

  4. Nanoscale structure in AgSbTe2 determined by diffuse elastic neutron scattering

    SciTech Connect (OSTI)

    Specht, Eliot D [ORNL; Ma, Jie [ORNL; Delaire, Olivier A [ORNL; Budai, John D [ORNL; May, Andrew F [ORNL; Karapetrova, Evguenia A. [Argonne National Laboratory (ANL)

    2015-01-01

    Diffuse elastic neutron scattering measurements confirm that AgSbTe2 has a hierarchical structure, with defects on length scales from nanometers to microns. While scattering from mesoscale structure is consistent with previously-proposed structures in which Ag and Sb order on a NaCl lattice, more diffuse scattering from nanoscale structure suggests a structural rearrangement in which hexagonal layers form a combination of (ABC), (ABA), and (AAB) stacking sequences. The AgCrSe2 structure is the best-fitting model for the local atomic arrangements.

  5. Low temperature fabrication and doping concentration analysis of Au/Sb ohmic contacts to n-type Si

    SciTech Connect (OSTI)

    Liu, J. Q.; Wang, C.; Zhu, T.; Wu, W. J.; Fan, J.; Tu, L. C.

    2015-11-15

    This paper investigates low temperature ohmic contact formation of Au/Sb to n-type Si substrates through AuSb/NiCr/Au metal stacks. Liquid epitaxy growth is utilized to incorporate Sb dopants into Si substrate in AuSi melt. The best specific contact resistivity achieved is 0.003 Ω ⋅ cm{sup 2} at 425 {sup o}C. Scanning electron microscopy (SEM) reveals inverted pyramidal crater regions at the metal/semiconductor interface, indicating that AuSi alloying efficiently occurs at such sites. Secondary ion mass spectroscopy (SIMS) shows that Sb atoms are successfully incorporated into Si as doping impurities during the anneal process, and the Sb doping concentration at the contact interface is found to be higher than the solid solubility limit in a Si crystal. This ohmic contacts formation method is suitable for semiconductor fabrication processes with limited thermal budget, such as post CMOS integration of MEMS.

  6. Gate-tunable high mobility remote-doped InSb/In{sub 1−x}Al{sub x}Sb quantum well heterostructures

    SciTech Connect (OSTI)

    Yi, Wei E-mail: MSokolich@hrl.com; Kiselev, Andrey A.; Thorp, Jacob; Noah, Ramsey; Nguyen, Binh-Minh; Bui, Steven; Rajavel, Rajesh D.; Hussain, Tahir; Gyure, Mark F.; Sokolich, Marko E-mail: MSokolich@hrl.com; Kratz, Philip; Qian, Qi; Manfra, Michael J.; Pribiag, Vlad S.; Kouwenhoven, Leo P.; Marcus, Charles M.

    2015-04-06

    Gate-tunable high-mobility InSb/In{sub 1−x}Al{sub x}Sb quantum wells (QWs) grown on GaAs substrates are reported. The QW two-dimensional electron gas (2DEG) channel mobility in excess of 200 000 cm{sup 2}/V s is measured at T = 1.8 K. In asymmetrically remote-doped samples with an HfO{sub 2} gate dielectric formed by atomic layer deposition, parallel conduction is eliminated and complete 2DEG channel depletion is reached with minimal hysteresis in gate bias response of the 2DEG electron density. The integer quantum Hall effect with Landau level filling factor down to 1 is observed. A high-transparency non-alloyed Ohmic contact to the 2DEG with contact resistance below 1 Ω·mm is achieved at 1.8 K.

  7. Microstructural stability in LPE Ga{sub x}In{sub (1{minus}x)}As{sub y}Sb{sub (1{minus}y)}/GaSb heterostructures

    SciTech Connect (OSTI)

    Chen, C.Y.; Bucklen, V.; Rajan, K.; Freeman, M.; Cardines, R.P.

    1998-06-01

    The morphological and structural characteristics associated with the growth of lattice matched In{sub x}Ga{sub (1{minus}x)}As{sub y}Sb{sub (1{minus}y)}/GaSb (100) heterostructures is presented. The experiments focused on studying the effect of growth on vicinal surfaces tilted from the exact (100) orientation as well as variations in epilayer chemistry. It was found that variations in these process parameters had very strong effects on both the nucleation characteristics of the epilayer and the atomistic scale homogeneity of the alloy. The <100> and <110> variants in compositional modulation/phase separation were detected, as well as the evolution of weak (110) ordering. These results are discussed in the context of other studies on phase stability in III-V epitaxial structures, especially in terms of surface reconstruction and kinetic effects near conditions of spinodal decomposition.

  8. Properties of Sb{sub 2}S{sub 3} and Sb{sub 2}Se{sub 3} thin films obtained by pulsed laser ablation

    SciTech Connect (OSTI)

    Virt, I. S.; Rudyj, I. O.; Kurilo, I. V.; Lopatynskyi, I. Ye.; Linnik, L. F.; Tetyorkin, V. V.; Potera, P.; Luka, G.

    2013-07-15

    The properties of Sb{sub 2}S{sub 3} and Sb{sub 2}Se{sub 3} thin films of variable thickness deposited onto Al{sub 2}O{sub 3}, Si, and KCl substrates are investigated by the method of pulsed laser ablation. The samples are obtained at a substrate temperature of 180 Degree-Sign C in a vacuum chamber with a residual pressure of 10{sup -5} Torr. The thickness of the films amounted to 40-1500 nm. The structure of the bulk material of the targets and films is investigated by the methods of X-ray diffraction and transmission high-energy electron diffraction, respectively. The electrical properties of the films are investigated in the temperature range of 253-310 K. It is shown that the films have semiconductor properties. The structural features of the films determine their optical parameters.

  9. Frit Development Efforts for Sludge Batch 4 (SB4): Operating Window Assessments fo Scenarios Leading Up to the Selected Preparation Plan for SB4

    SciTech Connect (OSTI)

    Peeler, D

    2006-03-21

    The objective of this report is to document technical information that has been provided to Defense Waste Processing Facility (DWPF) and Closure Business Unit (CBU) personnel as part of the frit development support for Sludge Batch 4 (SB4). The information presented in this report includes projected operating windows (expressed in terms of waste loading) for various sludge blending and/or washing options coupled with candidate frits of interest. Although the Nominal Stage assessment serves as the primary tool for these evaluations, select systems were also evaluated using a Variation Stage assessment in which compositional variations were introduced. In addition, assessments of the impacts of nepheline formation potential and the SO{sub 4}{sup -} solubility limit on the projected operating windows are also provided. Although this information was used as part of the technical basis leading to CBU's development of the preferred SB4 preparation plan, none of the options presented in this report was selected as the preferred plan. Therefore, the information is presented without significant interpretation of the resulting operating windows, but the projected windows are provided so additional insight can be explored if desired. Detailed assessments of the projected operating windows (using both Nominal and Variation Stage assessments) of the preferred sludge preparation plan with candidate frits are to be documented elsewhere. The information provided in this report is focused solely on model-based projections of the operating windows for various SB4 blending strategies of interest. Although nepheline formation potential is monitored via model predictions as a part of this assessment, experimental work investigating the impact of nepheline on glass quality is also being addressed in a parallel study. The results of this paper study and the experimental assessments of melt rate, SO{sub 4} solubility, and/or nepheline formation potential are all critical components of the

  10. Wa s h i n g t o n Ma r r i o t t e n Me t r o C e...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Wa s h i n g t o n Ma r r i o t t e n Me t r o C e n t e r C o n f e r e n c i a y P r o g r a ma d e C a p a c i t a c i n d e J u s t i c i a A mb i e n t a l N a c i o n a l ...

  11. Franklin PUD, Pasco WA

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    have been replaced by Hans Berg (State of Washington, Wid Ritchie (Idaho Falls) and Shawn Collins (The Energy Project). A few participants reported new LIEE activities, due at...

  12. Structural phase transition and phonon instabilities in Cu12Sb4S13

    DOE PAGES-Beta [OSTI]

    May, Andrew F.; Delaire, Olivier A.; Niedziela, Jennifer L.; Lara-Curzio, Edgar; Susner, Michael A.; Abernathy, Douglas L.; Kirkham, Melanie J.; McGuire, Michael A.

    2016-02-08

    In this study, a structural phase transition has been discovered in the synthetic tetrahedrite Cu12Sb4S13 at approximately 88 K. Upon cooling, the material transforms from its known cubic symmetry to a tetragonal unit cell that is characterized by an in-plane ordering that leads to a doubling of the unit cell volume. Specific heat capacity measurements demonstrate a hysteresis of more than two degrees in the associated anomaly. A similar hysteresis was observed in powder x-ray diffraction measurements, which also indicate a coexistence of the two phases, and together these results suggest a first-order transition. This structural transition coincides with amore » recently-reported metal-insulator transition, and the structural instability is related to the very low thermal conductivity κ in these materials. Inelastic neutron scattering was used to measure the phonon density of states in Cu12Sb4S13 and Cu10Zn2Sb4S13, both of which possess a localized, low-energy phonon mode associated with strongly anharmonic copper displacements that suppress κ. In Cu12Sb4S13, signatures of the phase transition are observed in the temperature dependence of the localized mode, which disappears at the structural transition. In contrast, in the cubic Zn-doped material, the mode is at slightly higher-energy but observable for all temperatures, though it softens upon cooling.« less

  13. The radiation chemistry of Cs-7SB, a solvent modifier used in Cs and Sr extraction

    SciTech Connect (OSTI)

    Mincher, B.J.; Martin, L.R.; Elias, G.; Mezyk, S.P.

    2008-07-01

    The solvent modifier 1-(2,2,3,3-tetrafluoro-propoxy)-3-(4-sec-butylphenoxy)-2-propanol, (Cs- 7SB) is used in conjunction with calixarenes and crown ethers dissolved in alkane diluents for the extraction of Cs and Sr from highly radioactive solutions. Its purpose is to solvate the ligands and the resulting ligand-metal complexes in the organic phase. Given this role, and its relatively high concentration in the formulations used for solvent extraction, radiolytic degradation of Cs-7SB might decrease the extraction efficiency of these elements as the solvent accumulates absorbed radiation dose. This work presents the results of studies of Cs-7SB using post-radiolysis gas chromatography with electron-capture detection and solvent-extraction distribution-ratio measurements. Also presented is the kinetic analysis of the bimolecular rate constant for the modifier's reaction with nitrogen trioxide and nitrogen dioxide radicals, major radiolytically-produced radical species in irradiated aqueous nitric acid. Although Cs-7SB was found to undergo reactions with nitrogen-centered radicals, little decrease in extraction efficiency was found. It is concluded the modifier, always present at concentrations much higher than the ligands, acts as a radical scavenger, protecting ligands from radiolytic attack. (authors)

  14. Performance Study of K2CsSb Photocathode inside a DC High Voltage Gun

    SciTech Connect (OSTI)

    T. Rao, J. Smedley, J.M. Grames, R. Mammei, J.L. McCarter, M. Poelker, R. Suleiman

    2011-03-01

    In the past decade, there has been considerable interest in the generation of tens of mA average current in a photoinjector. Until recently, GaAs:Cs cathodes and K2CsSb cathodes have been tested successfully in DC and RF injectors respectively for this application. Our goal is to test the GaAs:Cs in RF injector and the K2CsSb cathode in the DC gun in order to widen our choices. Since the multialkali cathode is a compound with uniform stochiometry over its entire thickness, we anticipate that the life time issues seen in GaAs:Cs due surface damage by ion bombardment would be minimized with this material. Hence successful operation of the K2CsSb cathode in DC gun could lead to a relatively robust electron source capable of delivering ampere level currents. In order to test the performance of K2CsSb cathode in a DC gun, we have designed and built a load lock system that would allow the fabrication of the cathode at BNL and its testing at JLab. In this paper, we will present the design of the load-lock system, cathode fabrication, and the cathode performance in the preparation chamber and in the DC gun.

  15. Thermoelectric properties of AgSbTe₂ from first-principles calculations

    SciTech Connect (OSTI)

    Rezaei, Nafiseh; Akbarzadeh, Hadi; Hashemifar, S. Javad

    2014-09-14

    The structural, electronic, and transport properties of AgSbTe₂ are studied by using full-relativistic first-principles electronic structure calculation and semiclassical description of transport parameters. The results indicate that, within various exchange-correlation functionals, the cubic Fd3⁻m and trigonal R3⁻m structures of AgSbTe₂ are more stable than two other considered structures. The computed Seebeck coefficients at different values of the band gap and carrier concentration are accurately compared with the available experimental data to speculate a band gap of about 0.1–0.35 eV for AgSbTe₂ compound, in agreement with our calculated electronic structure within the hybrid HSE (Heyd-Scuseria-Ernzerhof) functional. By calculating the semiclassical Seebeck coefficient, electrical conductivity, and electronic part of thermal conductivity, we present the theoretical upper limit of the thermoelectric figure of merit of AgSbTe₂ as a function of temperature and carrier concentration.

  16. Structural phase transition and phonon instability in Cu12Sb4S13

    DOE PAGES-Beta [OSTI]

    May, Andrew F.; Delaire, Olivier A.; Niedziela, Jennifer L.; Lara-Curzio, Edgar; Susner, Michael A.; Abernathy, Douglas L.; Kirkham, Melanie J.; McGuire, Michael A.

    2016-02-08

    In this study, a structural phase transition has been discovered in the synthetic tetrahedrite Cu12Sb4S13 at approximately 88 K. Upon cooling, the material transforms from its known cubic symmetry to a tetragonal unit cell that is characterized by an in-plane ordering that leads to a doubling of the unit cell volume. Specific heat capacity measurements demonstrate a hysteresis of more than two degrees in the associated anomaly. A similar hysteresis was observed in powder x-ray diffraction measurements, which also indicate a coexistence of the two phases, and together these results suggest a first-order transition. This structural transition coincides with amore » recently-reported metal-insulator transition, and the structural instability is related to the very low thermal conductivity κ in these materials. Inelastic neutron scattering was used to measure the phonon density of states in Cu12Sb4S13 and Cu10Zn2Sb4S13, both of which possess a localized, low-energy phonon mode associated with strongly anharmonic copper displacements that suppress κ. In Cu12Sb4S13, signatures of the phase transition are observed in the temperature dependence of the localized mode, which disappears at the structural transition. In contrast, in the cubic Zn-doped material, the mode is at slightly higher-energy but observable for all temperatures, though it softens upon cooling.« less

  17. Rashba effect in single-layer antimony telluroiodide SbTeI

    DOE PAGES-Beta [OSTI]

    Zhuang, Houlong L.; Cooper, Valentino R.; Xu, Haixuan; Ganesh, P.; Hennig, Richard G.; Kent, P. R. C.

    2015-09-04

    Exploring spin-orbit coupling (SOC) in single-layer materials is important for potential spintronics applications. In this paper, using first-principles calculations, we show that single-layer antimony telluroiodide SbTeI behaves as a two-dimensional semiconductor exhibiting a G0W0 band gap of 1.82 eV. More importantly, we observe the Rashba spin splitting in the SOC band structure of single-layer SbTeI with a sizable Rashba coupling parameter of 1.39 eV Å, which is significantly larger than that of a number of two-dimensional systems including surfaces and interfaces. The low formation energy and real phonon modes of single-layer SbTeI imply that it is stable. Finally, our studymore » suggests that single-layer SbTeI is a candidate single-layer material for applications in spintronics devices.« less

  18. High resolution InSb quantum well ballistic nanosensors for room temperature applications

    SciTech Connect (OSTI)

    Gilbertson, Adam; Cohen, L. F.; Lambert, C. J.; Solin, S. A.

    2013-12-04

    We report the room temperature operation of a quasi-ballistic InSb quantum well Hall sensor that exhibits a high frequency sensitivity of 560nT/?Hz at 20uA bias current. The device utilizes a partitioned buffer layer design that suppresses leakage currents through the mesa floor and can sustain large current densities.

  19. TANK 40 FINAL SB5 CHEMICAL CHARACTERIZATION RESULTS PRIOR TO NP ADDITION

    SciTech Connect (OSTI)

    Bannochie, C.; Click, D.

    2010-01-06

    A sample of Sludge Batch 5 (SB5) was pulled from Tank 40 in order to obtain radionuclide inventory analyses necessary for compliance with the Waste Acceptance Product Specifications (WAPS). This sample was also analyzed for chemical composition including noble metals. Prior to radionuclide inventory analyses, a final sample of the H-canyon Np stream will be added to bound the Np addition anticipated for Tank 40. These analyses along with the WAPS radionuclide analyses will help define the composition of the sludge in Tank 40 that is currently being fed to DWPF as SB5. At the Savannah River National Laboratory (SRNL) the 3-L Tank 40 SB5 sample was transferred from the shipping container into a 4-L high density polyethylene vessel and solids allowed to settle overnight. Supernate was then siphoned off and circulated through the shipping container to complete the transfer of the sample. Following thorough mixing of the 3-L sample, a 239 g sub-sample was removed. This sub-sample was then utilized for all subsequent analytical samples. Eight separate aliquots of the slurry were digested, four with HNO{sub 3}/HCl (aqua regia) in sealed Teflon{reg_sign} vessels and four in Na{sub 2}O{sub 2} (alkali or peroxide fusion) using Zr crucibles. Due to the use of Zr crucibles and Na in the peroxide fusions, Na and Zr cannot be determined from this preparation. Additionally, other alkali metals, such as Li and K that may be contaminants in the Na{sub 2}O{sub 2} are not determined from this preparation. Three Analytical Reference Glass - 14 (ARG-1) standards were digested along with a blank for each preparation. The ARG-1 glass allows for an assessment of the completeness of each digestion. Each aqua regia digestion and blank was diluted to 1:100 mL with deionized water and submitted to Analytical Development (AD) for inductively coupled plasma - atomic emission spectroscopy (ICPAES) analysis, inductively coupled plasma - mass spectrometry (ICP-MS) analysis of masses 81-209 and 230

  20. Molecular Beam Epitaxy on Gas Cluster Ion Beam Prepared GaSb Substrates: Towards Improved Surfaces and Interfaces

    SciTech Connect (OSTI)

    Krishnaswami, Kannan; Vangala, Shivashankar R.; Dauplaise, Helen; Allen, Lisa; Dallas, Gordon; Bakken, Daniel; Bliss, David; Goodhue, William

    2008-04-01

    A key problem in producing mid-infrared optoelectronic and low-power electronic devices in the GaSb material system is the lack of substrates with appropriate surfaces for epitaxial growth. Chemical mechanical polishing (CMP) of GaSb results in surface damage accompanied by tenacious oxides that do not easily desorb. To overcome this, we have developed a process using gas cluster ion beams (GCIB) to remove surface damage and produce engineered surface oxides. In this paper, we present surface modification results on GaSb substrates using O2-, CF4/O2-, and HBr-GCIB processes. X-ray photoelectron spectroscopy of GCIB produced surface layers showed the presence of mixed Ga- and Sb-oxides, with mostly Ga-oxides at the interface, desorbing at temperatures ranging 530°C to 560°C. Cross-sectional transmission electron microscopy of molecular beam epitaxy grown GaSb/AlGaSb layers showed that GCIB surfaces yielded smooth defect free substrate to epi transitions as compared to CMP surfaces. Furthermore, HBr-GCIB surfaces exhibited neither dislocation layers nor discernable interfaces, indicating complete oxide desorbtion prior to epigrowth on a clean single crystal template. Atomic force microscopy of GCIB epilayers exhibited smooth surfaces with characteristic step-terrace formations comprising monatomic steps and wide terraces. The HBr-GCIB process can be easily adapted to a large scale manufacturing process for epi-ready GaSb.

  1. Direct Evidence for Abrupt Postcrystallization Germanium Precipitation in Thin Phase-Change Films of Sb-15 at. % Ge

    SciTech Connect (OSTI)

    Cabral,C.; Krusin-Elbaum, L.; Bruley, J.; Raoux, S.; Deline, V.; Madan, A.; Pinto, T.

    2008-01-01

    We present evidence for the instability in the crystalline (metallic) state of binary Te-free phase-change Ge-Sb thin films considered for integration into nonvolatile nanosized memory cells. We find that while the amorphous (semiconducting) phase of eutectic Sb-15 at. % Ge is very robust until Sb crystallization at 240 C, at about 350 C, germanium rapidly precipitates out. Ge precipitation, visualized directly with transmission electron microscopy, is exothermic and is found to affect the films' reflectivity, resistance, and stress. It converts melting into a two-step process, which may seriously impact the switching reliability of a device.

  2. Electronically- and crystal-structure-driven magnetic structures and physical properties of RScSb (R = rare earth) compounds. A neutron diffraction, magnetization and heat capacity study

    SciTech Connect (OSTI)

    Ritter, C; Dhar, S K; Kulkarni, R; Provino, A; Paudyal, Durga; Manfrinetti, Pietro; Gschneidner, Karl A

    2014-08-14

    The synthesis of the new equiatomic RScSb ( R = La-Nd, Sm, Gd-Tm, Lu, Y) compounds has been recently reported. These rare earth compounds crystallize in two different crystal structures, adopting the CeScSi-type ( I 4/ mmm) for the lighter R (La-Nd, Sm) and the CeFeSi-type (P4 /nmm) structure for the heavier R ( R = Gd-Tm, Lu, Y). Here we report the results of neutron diffraction, magnetization and heat capacity measurements on some of these compounds ( R = Ce, Pr, Nd, Gd and Tb). Band structure calculations have also been performed on CeScSb and GdScGe (CeScSi-type), and on GdScSb and TbScSb (CeFeSi-type) to compare and understand the exchange interactions in CeScSi and CeFeSi structure types. The neutron diffraction investigation shows that all five compounds order magnetically, with the highest transition temperature of 66 K in TbScSb and the lowest of about 9 K in CeScSb. The magnetic ground state is simple ferromagnetic (τ = [0 0 0]) in CeScSb, as well in NdScSb for 32 >T > 22 K. Below 22 K a second magnetic transition, with propagation vector τ = [¼ ¼ 0], appears in NdScSb. PrScSb has a magnetic structure within, determined by mostly ferromagnetic interactions and antiferromagnetic alignment of the Pr-sites connected through the I-centering ( τ = [1 0 0]). A cycloidal spiral structure with a temperature dependent propagation vector τ = [δ δ ½] is found in TbScSb. The results of magnetization and heat capacity lend support to the main conclusions derived from neutron diffraction. As inferred from a sharp peak in magnetization, GdScSb orders antiferromagnetically at 56 K. First principles calculations show lateral shift of spin split bands towards lower energy from the Fermi level as the CeScSi-type structure changes to the CeFeSi-type structure. This rigid shift may force the system to transform from exchange split ferromagnetic state to the antiferromagnetic state in RScSb compounds (as seen for example in GdScSb and TbScSb) and is proposed to

  3. Carrier localization and in-situ annealing effect on quaternary Ga{sub 1-x}In{sub x}As{sub y}Sb{sub 1-y}/GaAs quantum wells grown by Sb pre-deposition

    SciTech Connect (OSTI)

    Thoma, Jiri; Huyet, Guillaume; Tyndall National Institute, UCC, Lee Maltings, Cork ; Liang, Baolai; Huffaker, Diana L.; Lewis, Liam; Hegarty, Stephen P.

    2013-03-18

    Using temperature-dependent photoluminescence spectroscopy, we have investigated and compared intrinsic InGaAs, intrinsic GaInAsSb, and p-i-n junction GaInAsSb quantum wells (QWs) embedded in GaAs barriers. Strong carrier localization inside the intrinsic GaInAsSb/GaAs QW has been observed together with its decrease inside the p-i-n sample. This is attributed to the effect of an in-situ annealing during the top p-doped AlGaAs layer growth at an elevated temperature of 580 Degree-Sign C, leading to Sb-atom diffusion and even atomic redistribution. High-resolution X-ray diffraction measurements and the decrease of both maximum localization energy and full delocalization temperature in the p-i-n QW sample further corroborated this conclusion.

  4. Temperature-dependent structural property and power factor of n type thermoelectric Bi{sub 0.90}Sb{sub 0.10} and Bi{sub 0.86}Sb{sub 0.14} alloys

    SciTech Connect (OSTI)

    Malik, K.; Das, Diptasikha; Bandyopadhyay, S.; Banerjee, Aritra; Center for Research in Nanoscience and Nanotechnology, University of Calcutta, JD-2, Sector-III, Saltlake City, Kolkata 700 098 ; Mandal, P.; Srihari, Velaga

    2013-12-09

    Thermal variation of structural property, linear thermal expansion coefficient (?), resistivity (?), thermopower (S), and power factor (PF) of polycrystalline Bi{sub 1-x}Sb{sub x} (x?=?0.10 and 0.14) samples are reported. Temperature-dependent powder diffraction experiments indicate that samples do not undergo any structural phase transition. Rietveld refinement technique has been used to perform detailed structural analysis. Temperature dependence of ? is found to be stronger for Bi{sub 0.90}Sb{sub 0.10}. Also, PF for direct band gap Bi{sub 0.90}Sb{sub 0.10} is higher as compared to that for indirect band gap Bi{sub 0.86}Sb{sub 0.14}. Role of electron-electron and electron-phonon scattering on ?, S, and PF has been discussed.

  5. Defect reduction in epitaxial GaSb grown on nanopatterned GaAs substrates using full wafer block copolymer lithography

    SciTech Connect (OSTI)

    Jha, Smita; Liu, C.-C.; Nealey, P. F.; Kuech, T. F.; Kuan, T. S.; Babcock, S. E.; Park, J. H.; Mawst, L. J.

    2009-08-10

    Defect reduction in the large lattice mismatched system of GaSb on GaAs, {approx}7%, was accomplished using full wafer block copolymer (BCP) lithography. A self-assembled BCP mask layer was used to generate a hexagonal pattern of {approx}20 nm holes on {approx}40 nm centers in a 20 nm SiO{sub 2} layer. GaSb growth initially takes place selectively within these holes leading to a dense array of small, strain-relaxed epitaxial GaSb islands. The GaSb grown on the patterned SiO{sub 2} layer exhibits a reduction in the x-ray linewidth attributed to a decrease in the threading dislocation density when compared to blanket pseudomorphic film growth.

  6. Characterization of silver photodiffusion in Ge{sub 8}Sb{sub 2}Te{sub 11} thin films

    SciTech Connect (OSTI)

    Kumar, Sandeep; Singh, D.; Sandhu, S.; Thangaraj, R.

    2015-06-24

    Silver-doped amorphous Ge{sub 8}Sb{sub 2}Te{sub 11} thin films have been prepared by photodiffusion at room-temperature; the Ge{sub 8}Sb{sub 2}Te{sub 11}/Ag bilayer was deposited by vacuum thermal evaporation. Photodiffusion of Ag into the amorphous Ge{sub 8}Sb{sub 2}Te{sub 11} thin films has been carried out by illuminating the prepared Ge{sub 8}Sb{sub 2}Te{sub 11}/Ag bilayer with halogen lamp. The photodiffused silver depth profile was traced by means of time of flight secondary ion mass spectroscopy. The film remains amorphous after Ag photodiffusion. The crystallization temperature of the films was evaluated by temperature dependent sheet resistance measurement. The amorphous nature and crystalline phases of the films have been identified by using X-ray diffraction.

  7. Effect of rare-earth doping in RCrSb3 (R = La, Pr, Sm, and Gd...

    Office of Scientific and Technical Information (OSTI)

    Journal Article: Effect of rare-earth doping in RCrSb3 (R La, Pr, Sm, and Gd) Citation Details In-Document Search ... We report on the electrical resistivity and magnetic ...

  8. Impact of stress relaxation in GaAsSb cladding layers on quantum dot creation in InAs/GaAsSb structures grown on GaAs (001)

    SciTech Connect (OSTI)

    Bremner, S. P.; Ban, K.-Y.; Faleev, N. N.; Honsberg, C. B.; Smith, D. J.

    2013-09-14

    We describe InAs quantum dot creation in InAs/GaAsSb barrier structures grown on GaAs (001) wafers by molecular beam epitaxy. The structures consist of 20-nm-thick GaAsSb barrier layers with Sb content of 8%, 13%, 15%, 16%, and 37% enclosing 2 monolayers of self-assembled InAs quantum dots. Transmission electron microscopy and X-ray diffraction results indicate the onset of relaxation of the GaAsSb layers at around 15% Sb content with intersected 60° dislocation semi-loops, and edge segments created within the volume of the epitaxial structures. 38% relaxation of initial elastic stress is seen for 37% Sb content, accompanied by the creation of a dense net of dislocations. The degradation of In surface migration by these dislocation trenches is so severe that quantum dot formation is completely suppressed. The results highlight the importance of understanding defect formation during stress relaxation for quantum dot structures particularly those with larger numbers of InAs quantum-dot layers, such as those proposed for realizing an intermediate band material.

  9. The reaction mechanism of FeSb2 as anode for sodium-ion batteries

    SciTech Connect (OSTI)

    Baggetto, Loic; Hah, Hien-Yoong; Charles E. Johnson; Bridges, Craig A.; Johnson, Jackie A.; Veith, Gabriel M.

    2014-04-04

    The electrochemical reaction of FeSb2 with Na is reported for the first time. The first discharge (sodiation) potential profile of FeSb2 is characterized by a gentle slope centered at 0.25 V. During charge (Na removal) and the subsequent discharge, the main reaction takes place near 0.7 V and 0.4 V, respectively. The reversible storage capacity amounts to 360 mA h g-1, which is smaller than the theoretical value of 537 mA h g-1. The reaction, studied by ex situ and in situ X-ray diffraction, is found to proceed by the consumption of crystalline FeSb2 to form an amorphous phase. Upon further sodiation, the formation of nanocrystalline Na3Sb domains is evidenced. During desodiation, Na3Sb domains convert into an amorphous phase. The chemical environment of Fe, probed by 57Fe Mo ssbauer spectroscopy, undergoes significant changes during the reaction. During sodiation, the well-resolved doublet of FeSb2 with an isomer shift around 0.45 mm s-1 and a quadrupole splitting of 1.26 mm s-1 is gradually converted into a doublet line centered at about 0.15 mm s1 along with a singlet line around 0 mm s-1. The former signal results from the formation of a Fe-rich FexSb alloy with an estimated composition of Fe4Sb while the latter signal corresponds to superparamagnetic Fe due to the formation of nanosized pure Fe domains. Interestingly the signal of Fe4Sb remains unaltered during desodiation. This mechanism is substantially different than that observed during the reaction with Li. The irreversible formation of a Fe-rich Fe4Sb alloy and the absence of full desodiation of Sb domains explain the lower than theoretical practical storage capacity.

  10. InAs quantum dot morphology after capping with In, N, Sb alloyed thin films

    SciTech Connect (OSTI)

    Keizer, J. G.; Koenraad, P. M.; Ulloa, J. M.; Utrilla, A. D.

    2014-02-03

    Using a thin capping layer to engineer the structural and optical properties of InAs/GaAs quantum dots (QDs) has become common practice in the last decade. Traditionally, the main parameter considered has been the strain in the QD/capping layer system. With the advent of more exotic alloys, it has become clear that other mechanisms significantly alter the QD size and shape as well. Larger bond strengths, surfactants, and phase separation are known to act on QD properties but are far from being fully understood. In this study, we investigate at the atomic scale the influence of these effects on the morphology of capped QDs with cross-sectional scanning tunneling microscopy. A broad range of capping materials (InGaAs, GaAsSb, GaAsN, InGaAsN, and GaAsSbN) are compared. The QD morphology is related to photoluminescence characteristics.

  11. Doping Effects on the Thermoelectric Properties of Cu3SbSe4

    SciTech Connect (OSTI)

    Skoug, Eric; Cain, Jeffrey D.; Morelli, Donald; Majsztrik, Paul W; Kirkham, Melanie J; Lara-Curzio, Edgar

    2011-01-01

    We present the first systematic doping study on the ternary semiconductor Cu3SbSe 4 . We have developed a novel synthesis procedure that produces high-quality polycrystalline samples with hole concentrations an order of magnitude lower than have been reported for the undoped compound. The hole concentration can be increased by adding small amounts of either Ge or Sn on the Sb site. The power factor increases with increasing doping, reaching a maximum value of 16 W/cmK^2 . The thermoelectric properties are optimized for the 2% Sn doped compound which has ZT=0.72 at 630K, rivaling that of state-of-the-art thermoelectric materials in this temperature range.

  12. Structural stability and electronic properties of InSb nanowires: A first-principles study

    SciTech Connect (OSTI)

    Zhang, Yong; Tang, Li-Ming Ning, Feng; Chen, Ke-Qiu; Wang, Dan

    2015-03-28

    Using first-principles calculations, we investigate the structural stability and electronic properties of InSb nanowires (NWs). The results show that, in contrast to the bulk InSb phase, wurtzite (WZ) NWs are more stable than zinc-blende (ZB) NWs when the NW diameter is smaller than 10 nm. Nonpassivated ZB and WZ NWs are found to be metallic and semiconducting, respectively. After passivation, both ZB and WZ NWs exhibit direct-gap semiconductor character, and the band gap magnitude of the NWs strongly depends on the suppression of surface states by the charge-compensation ability of foreign atoms to surface atoms. Moreover, the carrier mobility of the NW can be strengthened by halogen passivation.

  13. Irreversible altering of crystalline phase of phase-change Ge-Sb thin films

    SciTech Connect (OSTI)

    Krusin-Elbaum, L.; Shakhvorostov, D.; Cabral, C. Jr.; Raoux, S.; Jordan-Sweet, J. L.

    2010-03-22

    The stability of the crystalline phase of binary phase-change Ge{sub x}Sb{sub 1-x} films is investigated over a wide range of Ge content. From Raman spectroscopy we find the Ge-Sb crystalline structure irreversibly altered after exposure to a laser beam. We show that with increasing beam intensity/temperature Ge agglomerates and precipitates out in the amount growing with x. A simple empirical relation links Ge precipitation temperature T{sub Ge}{sup p} to the rate of change dT{sub cryst}/dx of crystallization, with the precipitation easiest on the mid-range x plateau, where T{sub cryst} is nearly constant. Our findings point to a preferable 15% < or approx. x < 50% window, that may achieve the desired cycling/archival properties of a phase-change cell.

  14. Funding Opportunity Announcement: Solar Bankability Data to Advance Transactions and Access (SB-DATA)

    Energy.gov [DOE]

    The Solar Bankability Data to Advance Transactions and Access (SB-DATA) funding program targets soft cost reduction by increasing data accessibility and quality. It will facilitate the growth and expansion of the solar industry by creating a standardized data landscape for distributed solar. As the solar market continues to rapidly grow, it’s critical that the collection, management, and exchange of solar datasets across the value chain – especially those that affect the bankability of solar assets – are coordinated and streamlined to protect consumers, increase efficient pricing, and support new and existing businesses entering the solar marketplace. The goal of SB-DATA is to support the creation and adoption of industry-led open data standards for rapid and seamless data exchange across the value chain from origination to decommissioning.

  15. Two-dimensional topological crystalline insulator phase in Sb/Bi planar honeycomb with tunable Dirac gap

    DOE PAGES-Beta [OSTI]

    Hsu, Chia -Hsiu; Huang, Zhi -Quan; Crisostomo, Christian P.; Yao, Liang -Zi; Chuang, Feng -Chuan; Liu, Yu -Tzu; Wang, Baokai; Hsu, Chuang -Han; Lee, Chi -Cheng; Lin, Hsin; et al

    2016-01-14

    We predict planar Sb/Bi honeycomb to harbor a two-dimensional (2D) topological crystalline insulator (TCI) phase based on first-principles computations. Although buckled Sb and Bi honeycombs support 2D topological insulator (TI) phases, their structure becomes planar under tensile strain. The planar Sb/Bi honeycomb structure restores the mirror symmetry, and is shown to exhibit non-zero mirror Chern numbers, indicating that the system can host topologically protected edge states. Our computations show that the electronic spectrum of a planar Sb/Bi nanoribbon with armchair or zigzag edges contains two Dirac cones within the band gap and an even number of edge bands crossing themore » Fermi level. Lattice constant of the planar Sb honeycomb is found to nearly match that of hexagonal-BN. As a result, the Sb nanoribbon on hexagonal-BN exhibits gapped edge states, which we show to be tunable by an out-of the-plane electric field, providing controllable gating of edge state important for device applications.« less

  16. Absorption properties of type-II InAs/InAsSb superlattices measured by spectroscopic ellipsometry

    SciTech Connect (OSTI)

    Webster, P. T.; Riordan, N. A.; Liu, S.; Zhang, Y.-H.; Johnson, S. R.; Steenbergen, E. H.

    2015-02-09

    Strain-balanced InAs/InAsSb superlattices offer access to the mid- to long-wavelength infrared region with what is essentially a ternary material system at the GaSb lattice constant. The absorption coefficients of InAs/InAsSb superlattices grown by molecular beam epitaxy on (100)-oriented GaSb substrates are measured at room temperature over the 30 to 800?meV photon energy range using spectroscopic ellipsometry, and the miniband structure of each superlattice is calculated using a Kronig-Penney model. The InAs/InAsSb conduction band offset is used as a fitting parameter to align the calculated superlattice ground state transition energy to the measured absorption onset at room temperature and to the photoluminescence peak energy at low temperature. It is observed that the ground state absorption coefficient and transition strength are proportional to the square of the wavefunction overlap and the ground state absorption coefficient approaches a maximum value of around 5780?cm{sup ?1} as the wavefunction overlap approaches 100%. The absorption analysis of these samples indicates that the optical joint density of states is weakly dependent on the period thickness and Sb content of the superlattice, and that wavefunction overlap is the principal design parameter in terms of obtaining strong absorption in these structures.

  17. Time-course analysis of the Shewanella amazonensis SB2B proteome in response to sodium chloride shock

    SciTech Connect (OSTI)

    Parnell, John J.; Callister, Stephen J.; Rompato, Giovanni; Nicora, Carrie D.; Pasa-Tolic, Ljiljana; Williamson, Ashley; Pfrender, Michael E.

    2011-06-29

    Organisms in the genus Shewanella have become models for response to environmental stress. One of the most important environmental stresses is change in osmolarity. In this study, we experimentally determine the response mechanisms of Shewanella amazonensis SB2B during osmotic stress. Osmotic stress in SB2B was induced through exposure to NaCl, and the time-course proteomics response was measured using liquid chromatography mass spectrometry. Protein trends were qualitatively compared to gene expression trends and to phenotypic characterization. Osmotic stress affects motility, and has also been associated with a change in the membrane fatty acid composition (due to induction of branched chain amino acid degradation pathways); however, we show this is not the case for SB2B. Although proteins and genes involved with branched chain amino acid degradation are induced, fatty acid degradation pathways are not induced and no change in the fatty acid profile occurs in SB2B as a result of osmotic shock. The most extensive response of SB2B over the time course of acclimation to high salt involves an orchestrated sequence of events comprising increased expression of signal transduction associated with motility and restricted cell division and DNA replication. After SB2B has switched to increased branched chain amino acid degradation, motility, and cellular replication proteins return to pre-perturbed levels.

  18. Gain and tuning characteristics of mid-infrared InSb quantum dot diode lasers

    SciTech Connect (OSTI)

    Lu, Q.; Zhuang, Q.; Hayton, J.; Yin, M.; Krier, A.

    2014-07-21

    There have been relatively few reports of lasing from InSb quantum dots (QDs). In this work, type II InSb/InAs QD laser diodes emitting in the mid-infrared at 3.1??m have been demonstrated and characterized. The gain was determined to be 2.9?cm{sup ?1} per QD layer, and the waveguide loss was ?15?cm{sup ?1} at 4?K. Spontaneous emission measurements below threshold revealed a blue shift of the peak wavelength with increasing current, indicating filling of ground state heavy hole levels in the QDs. The characteristic temperature, T{sub 0}?=?101?K below 50?K, but decreased to 48?K at higher temperatures. The emission wavelength of these lasers showed first a blue shift followed by a red shift with increasing temperature. A hybrid structure was used to fabricate the laser by combining a liquid phase epitaxy grown p-InAs{sub 0.61}Sb{sub 0.13}P{sub 0.26} lower cladding layer and an upper n{sup +} InAs plasmon cladding layer which resulted in a maximum operating temperature (T{sub max}) of 120?K in pulsed mode, which is the highest reported to date.

  19. Interband magneto-spectroscopy in InSb square and parabolic quantum wells

    SciTech Connect (OSTI)

    Kasturiarachchi, T.; Edirisooriya, M.; Mishima, T. D.; Doezema, R. E.; Santos, M. B.; Saha, D.; Pan, X.; Sanders, G. D.; Stanton, C. J.

    2015-06-07

    We measure the magneto-optical absorption due to intersubband optical transitions between conduction and valence subband Landau levels in InSb square and parabolic quantum wells. InSb has the narrowest band gap (0.24 eV at low temperature) of the III–V semiconductors leading to a small effective mass (0.014 m{sub 0}) and a large g–factor (−51). As a result, the Landau level spacing is large at relatively small magnetic fields (<8 T), and one can observe spin-splitting of the Landau levels. We examine two structures: (i) a multiple-square-well structure and (ii) a structure containing multiple parabolic wells. The energies and intensities of the strongest features are well explained by a modified Pidgeon-Brown model based on an 8-band k•p model that explicitly incorporates pseudomorphic strain. The strain is essential for obtaining agreement between theory and experiment. While modeling the square well is relatively straight-forward, the parabolic well consists of 43 different layers of various thickness to approximate a parabolic potential. Agreement between theory and experiment for the parabolic well validates the applicability of the model to complicated structures, which demonstrates the robustness of our model and confirms its relevance for developing electronic and spintronic devices that seek to exploit the properties of the InSb band structure.

  20. Vacancy structures and melting behavior in rock-salt GeSbTe

    DOE PAGES-Beta [OSTI]

    Zhang, Bin; Wang, Xue -Peng; Shen, Zhen -Ju; Li, Xian -Bin; Wang, Chuan -Shou; Chen, Yong -Jin; Li, Ji -Xue; Zhang, Jin -Xing; Zhang, Ze; Zhang, Sheng -Bai; et al

    2016-05-03

    Ge-Sb-Te alloys have been widely used in optical/electrical memory storage. Because of the extremely fast crystalline-amorphous transition, they are also expected to play a vital role in next generation nonvolatile microelectronic memory devices. However, the distribution and structural properties of vacancies have been one of the key issues in determining the speed of melting (or amorphization), phase-stability, and heat-dissipation of rock-salt GeSbTe, which is crucial for its technological breakthrough in memory devices. Using spherical aberration-aberration corrected scanning transmission electron microscopy and atomic scale energy-dispersive X-ray mapping, we observe a new rock-salt structure with high-degree vacancy ordering (or layered-like ordering) atmore » an elevated temperature, which is a result of phase transition from the rock-salt phase with randomly distributed vacancies. First-principles calculations reveal that the phase transition is an energetically favored process. Furthermore, molecular dynamics studies suggest that the melting of the cubic rock-salt phases is initiated at the vacancies, which propagate to nearby regions. The observation of multi-rock-salt phases suggests another route for multi-level data storage using GeSbTe.« less

  1. Optical properties of amorphous and crystalline Sb-doped SnO{sub 2} thin films studied with spectroscopic ellipsometry: Optical gap energy and effective mass

    SciTech Connect (OSTI)

    So, Hyeon Seob; Park, Jun-Woo; Jung, Dae Ho; Ko, Kun Hee; Lee, Hosun

    2015-08-28

    We investigated the optical properties of amorphous and crystalline antimony (Sb)-doped tin dioxide (SnO{sub 2}) thin films grown using the co-sputtering deposition method at room temperature. We used undoped and Sb-doped (8 wt. %) SnO{sub 2} targets. Varying the relative power ratio of the two targets, we controlled the Sb-composition of the SnO{sub 2}:Sb thin films up to 2.3 at. % of Sb contents. Through annealing, the as-grown amorphous SnO{sub 2}:Sb thin films were transformed to crystalline thin films. Dielectric functions were obtained from the measured ellipsometry angles, Ψ and Δ, using the Drude and parametric optical constant models. We determined the absorption coefficients and optical gap energies of the SnO{sub 2}:Sb thin films from the dielectric functions. We found increasing optical gap energy with increasing Sb composition. Increases in the Drude tail amplitudes, a signature of free carrier concentrations, were found in annealed, crystalline thin films with increasing Sb composition. The increase in the optical gap energy with increasing Sb composition was mainly attributed to the Burstein-Moss effect. Using Hall effect measurements, we obtained Hall carrier concentrations (N{sub Hall}) and electron Hall mobilities (μ{sub Hall}). The carrier concentrations and mobilities increased from 2.6 × 10{sup 19 }cm{sup −3} and 1.0 cm{sup 2}/(V s) to 2.0 × 10{sup 20 }cm{sup −1} and 7.2 cm{sup 2}/(V s), respectively, with increasing Sb contents. This result suggests that the nominally undoped SnO{sub 2} films are unintentionally n-type doped. Assuming that the N{sub Hall} and optical carrier concentrations (N{sub opt}) were the same, we obtained the effective masses of the SnO{sub 2}:Sb thin films with increasing Sb compositions. The effective masses of the SnO{sub 2}:Sb thin films increased from 0.245 m{sub 0} to 0.4 m{sub 0} with increasing Sb doping contents, and the nonparabolicity of the conduction band was estimated. We

  2. Ultrathin body GaSb-on-insulator p-channel metal-oxide-semiconductor field-effect transistors on Si fabricated by direct wafer bonding

    SciTech Connect (OSTI)

    Yokoyama, Masafumi Takenaka, Mitsuru; Takagi, Shinichi; Yokoyama, Haruki

    2015-02-16

    We have realized ultrathin body GaSb-on-insulator (GaSb-OI) on Si wafers by direct wafer bonding technology using atomic-layer deposition (ALD) Al{sub 2}O{sub 3} and have demonstrated GaSb-OI p-channel metal-oxide-semiconductor field-effect transistors (p-MOSFETs) on Si. A 23-nm-thick GaSb-OI p-MOSFET exhibits the peak effective mobility of ∼76 cm{sup 2}/V s. We have found that the effective hole mobility of the thin-body GaSb-OI p-MOSFETs decreases with a decrease in the GaSb-OI thickness or with an increase in Al{sub 2}O{sub 3} ALD temperature. The InAs passivation of GaSb-OI MOS interfaces can enhance the peak effective mobility up to 159 cm{sup 2}/V s for GaSb-OI p-MOSFETs with the 20-nm-thick GaSb layer.

  3. Using galvanostatic electroforming of Bi1–xSbx nanowires to control composition, crystallinity, and orientation

    SciTech Connect (OSTI)

    Limmer, Steven J.; Medlin, Douglas L.; Siegal, Michael P.; Hekmaty, Michelle; Lensch-Falk, Jessica L.; Erickson, Kristopher; Pillars, Jamin; Yelton, W. Graham

    2014-12-03

    When using galvanostatic pulse deposition, we studied the factors influencing the quality of electroformed Bi1–xSbx nanowires with respect to composition, crystallinity, and preferred orientation for high thermoelectric performance. Two nonaqueous baths with different Sb salts were investigated. The Sb salts used played a major role in both crystalline quality and preferred orientations. Nanowire arrays electroformed using an SbI3 -based chemistry were polycrystalline with no preferred orientation, whereas arrays electroformed from an SbCl3-based chemistry were strongly crystallographically textured with the desired trigonal orientation for optimal thermoelectric performance. From the SbCl3 bath, the electroformed nanowire arrays were optimized to have nanocompositional uniformity, with a nearly constant composition along the nanowire length. Moreover, nanowires harvested from the center of the array had an average composition of Bi0.75 Sb0.25. However, the nanowire compositions were slightly enriched in Sb in a small region near the edges of the array, with the composition approaching Bi0.70Sb0.30.

  4. In-situ characterization of the optical and electronic properties in GeTe and GaSb thin films

    SciTech Connect (OSTI)

    Velea, A.; Popescu, M.; Galca, A. C.; Socol, G.

    2015-10-07

    GeTe and GaSb thin films obtained by pulsed laser deposition were investigated by spectroscopic ellipsometry at controlled temperatures. The GeTe films were fully amorphous, while the GaSb films were partially crystalized in the as-deposited state. The Tauc-Lorentz model was employed to fit the experimental data. From the temperature study of the optical constants, it was observed the crystallization in the 150–160 °C range of GeTe amorphous films and between 230 and 240 °C of GaSb amorphous phase. A second transition in the resonance energy and the broadening parameter of the Lorentz oscillator was observed due to the crystallization of Sb after 250 °C. The temperatures of 85 °C and 130 °C are noticed as the start of the relaxation of the amorphous GeTe phase and as-deposited GaSb. The peaks of the imaginary part of the dielectric function red shifted after the phase change, while the variation with temperature of the crystalline phase follows the Varshni law. The electron-phonon coupling constants are 2.88 and 1.64 for c-GeTe and c-GaSb, respectively. An optical contrast up to 60% was obtained for GeTe films and a maximum value of 7.5% is revealed in the case GaSb, which is altered by the partial crystallinity of the as-deposited films.

  5. Microstructural evaluation of Sb-adjusted Al{sub 0.5}Ga{sub 0.5}As{sub 1{minus}y}Sb{sub y} buffer layer systems for IR applications

    SciTech Connect (OSTI)

    Chen, E.; Paine, D.C.; Uppal, P.; Ahearn, J.S.; Nichols, K.; Charache, G.W.

    1998-06-01

    The authors report on a transmission electron microscopy (TEM) study of Sb-adjusted quaternary Al{sub 0.5}Ga{sub 0.5}As{sub 1{minus}y}Sb{sub y} buffer-layers grown on <001> GaAs substrates. A series of structures were grown by MBE at 470 C that utilize a multilayer grading scheme in which the Sb content of Al{sub 0.5}Ga{sub 0.5}As{sub 1{minus}y}Sb{sub y} buffer-layers grown on <001> GaAs substrates. A series of structures were grown by MBe at 470 C that utilize a multilayer grading scheme in which the Sb content of Al{sub 0.5}Ga{sub 0.5}As{sub 1{minus}y}Sb{sub y} is successively increased in a series of 125 nm thick layers. Post growth analysis using conventional bright field and weak beam dark field imaging of these buffer layers in cross-section reveals that the interface misfit dislocations are primarily of the 60{degree} type and are distributed through out the interfaces of the buffer layer. When optimized, the authors have shown, using plan view and cross-sectional TEM, that this approach can reduce the threading defect density to below the detectability limit of TEM (< 10{sup 5}/cm{sup 2}) and preserve growth surface planarity. The Sb-graded approach was used to fabricate two 2.2 {micro}m power converter structures fabricated using InGaAs grown on Sb-based buffer layers on GaAs substrates. A microstructural and electrical characterization was performed on these device structures and the results are contrasted with a sample in which InP was selected as the substrate. Microstructure, defect density and device performance in these not-yet-optimized Sb-based buffer layers compares favorably to equivalent devices fabricated using InP substrates.

  6. Investigation of high hole mobility In{sub 0.41}Ga{sub 0.59}Sb/Al{sub 0.91}Ga{sub 0.09}Sb quantum well structures grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Wang, Juan; Xing, Jun-Liang; Xiang, Wei; Wang, Guo-Wei; Xu, Ying-Qiang; Ren, Zheng-Wei; Niu, Zhi-Chuan

    2014-02-03

    Modulation-doped In{sub 0.41}Ga{sub 0.59}Sb/Al{sub 0.91}Ga{sub 0.09}Sb quantum-well (QW) structures were grown by molecular beam epitaxy. Cross-sectional transmission electron microscopy and atomic force microscopy studies show high crystalline quality and smooth surface morphology. X-ray diffraction investigations confirm 1.94% compressive strain within In{sub 0.41}Ga{sub 0.59}Sb channel. High room temperature hole mobility with high sheet density of 1000 cm{sup 2}/Vs, 0.877??10{sup 12}/cm{sup 2}, and 965 cm{sup 2}/Vs, 1.112??10{sup 12}/cm{sup 2} were obtained with different doping concentrations. Temperature dependent Hall measurements show different scattering mechanisms on hole mobility at different temperature range. The sheet hole density keeps almost constantly from 300?K to 77?K. This study shows great potential of In{sub 0.41}Ga{sub 0.59}Sb/Al{sub 0.91}Ga{sub 0.09}Sb QW for high-hole-mobility device applications.

  7. High thermal stability Sb{sub 3}Te-TiN{sub 2} material for phase change memory application

    SciTech Connect (OSTI)

    Ji, Xinglong; Zhou, Wangyang; Wu, Liangcai Zhu, Min; Rao, Feng; Song, Zhitang; Cao, Liangliang; Feng, Songlin

    2015-01-12

    For phase change memory (PCM) applications, it has been widely accepted that δ phase Sb-Te has fast operation speed and good phase stability. However, the fast growth crystallization mechanism will cause poor amorphous phase stability and overlarge grain size. We introduce TiN{sub 2} into δ phase Sb-Te (Sb{sub 3}Te) to enhance the amorphous thermal stability and refine the grain size. With TiN{sub 2} incorporating, the temperature for 10-year data retention increases from 79 °C to 124 °C. And the grain size decreases to dozens of nanometers scale. Based on X-ray photoelectron spectroscopy and transmission electron microscopy results, we knew that nitrogen atoms bond with titanium, forming disorder region at the grain boundary of Sb{sub 3}Te-TiN{sub 2} (STTN). Thus, STTN has a quite different crystallization mechanism from Sb{sub 3}Te. Furthermore, PCM device based on STTN can realize reversible phase change under 20 ns electrical pulse.

  8. Characterization of Cr-rich Cr-Sb multilayer films: Syntheses of a new metastable phase using modulated elemental reactants

    SciTech Connect (OSTI)

    Regus, Matthias; Mankovsky, Sergiy; Polesya, Svitlana; Kuhn, Gerhard; Ditto, Jeffrey; Schürmann, Ulrich; Jacquot, Alexandre; Bartholomé, Kilian; Näther, Christian; Winkler, Markus; König, Jan D.; Böttner, Harald; Kienle, Lorenz; Johnson, David C.; Ebert, Hubert; Bensch, Wolfgang

    2015-10-15

    The new metastable compound Cr{sub 1+x}Sb with x up to 0.6 has been prepared via a thin film approach using modulated elemental reactants and investigated by in-situ X-ray reflectivity, X-ray diffraction, differential scanning calorimetry, energy dispersive X-ray analysis as well as transmission electron microscopy and atomic force microscopy. The new Cr-rich antimonide crystallizes in a structure related to the Ni{sub 2}In-type structure, where the crystallographic position (1/3, 2/3, 3/4) is partially occupied by excess Cr. The elemental layers of the pristine material interdiffused significantly before Cr{sub 1+x}Sb crystallized. A change in the activation energy was observed for the diffusion process when crystal growth starts. First-principles electronic structure calculations provide insight into the structural stability, magnetic properties and resistivity of Cr{sub 1+x}Sb. - Graphical abstract: 1 amorphous multilayered film 2 interdiffused amorphous film 3 metastable crystalline phase 4 thermodynamic stable phase (and by-product). - Highlights: • Interdiffusion of amorphous Cr and Sb occurs before crystallization. • Crystallization of a new metastable phase Cr{sub 1.6}Sb in Ni{sub 2}In-type structure. • The new Cr-rich phase shows half-metallic behavior.

  9. Superconductivity in strong spin orbital coupling compound Sb2Se3

    SciTech Connect (OSTI)

    Kong, P. P.; Sun, F.; Xing, L. Y.; Zhu, J.; Zhang, S. J.; Li, W. M.; Liu, Q. Q.; Wang, X. C.; Feng, S. M.; Yu, X. H.; Zhu, J. L.; Yu, R. C.; Yang, W. G.; Shen, G. Y.; Zhao, Y. S.; Ahuja, R.; Mao, H. K.; Jin, C. Q.

    2014-10-20

    Recently, A2B3 type strong spin orbital coupling compounds such as Bi2Te3, Bi2Se3 and Sb2Te3 were theoretically predicated to be topological insulators and demonstrated through experimental efforts. The counterpart compound Sb2Se3 on the other hand was found to be topological trivial, but theoretical studies indicated that the pressure might induce Sb2Se3 into a topological nontrivial state. We report on the discovery of superconductivity in Sb2Se3 single crystal induced via pressure. Our experiments indicated that Sb2Se3 became superconductive at high pressures above 10 GPa proceeded by a pressure induced insulator to metal like transition at ~3 GPa which should be related to the topological quantum transition. The superconducting transition temperature (TC) increased to around 8.0 K with pressure up to 40 GPa while it keeps ambient structure. As a result, high pressure Raman revealed that new modes appeared around 10 GPa and 20 GPa, respectively, which correspond to occurrence of superconductivity and to the change of TC slop as the function of high pressure in conjunction with the evolutions of structural parameters at high pressures.

  10. Unusual magnetic hysteresis and the weakened transition behavior induced by Sn substitution in Mn{sub 3}SbN

    SciTech Connect (OSTI)

    Sun, Ying, E-mail: sunying@buaa.edu.cn [Center for Condensed Matter and Materials Physics, Department of Physics, Beihang University, Beijing 100191 (China); International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science, Tsukuba, Ibaraki 305-0044 (Japan); Guo, Yanfeng; Li, Jun; Wang, Xia [Superconducting Properties Unit, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044 (Japan); Tsujimoto, Yoshihiro [Materials Processing Unit, National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan); Wang, Cong [Center for Condensed Matter and Materials Physics, Department of Physics, Beihang University, Beijing 100191 (China); Feng, Hai L.; Sathish, Clastin I.; Yamaura, Kazunari, E-mail: yamaura.kazunari@nims.go.jp [Superconducting Properties Unit, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044 (Japan); Graduate School of Chemical Sciences and Engineering, Hokkaido University, Sapporo, Hokkaido 060-0810 (Japan); Matsushita, Yoshitaka [Analysis Station, National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan)

    2014-01-28

    Substitution of Sb with Sn was achieved in ferrimagnetic antiperovskite Mn{sub 3}SbN. The experimental results indicate that with an increase in Sn concentration, the magnetization continuously decreases and the crystal structure of Mn{sub 3}Sb{sub 1-x}Sn{sub x}N changes from tetragonal to cubic phase at around x of 0.8. In the doping series, step-like anomaly in the isothermal magnetization was found and this behavior was highlighted at x?=?0.4. The anomaly could be attributed to the magnetic frustration, resulting from competition between the multiple spin configurations in the antiperovskite lattice. Meantime, H{sub c} of 18 kOe was observed at x?=?0.3, which is probably the highest among those of manganese antiperovskite materials reported so far. With increasing Sn content, the abrupt change of resistivity and the sharp peak of heat capacity in Mn{sub 3}SbN were gradually weakened. The crystal structure refinements indicate the weakened change at the magnetic transition is close related to the change of c/a ratio variation from tetragonal to cubic with Sn content. The results derived from this study indicate that the behavior of Mn{sub 3}Sb{sub 1-x}Sn{sub x}N could potentially enhance its scientific and technical applications, such as spin torque transfer and hard magnets.

  11. Production and properties of Si-SiO2-In Sb structures

    SciTech Connect (OSTI)

    Padalko, A.G.; Kotov, B.A.; Lazarev, V.B.; Sukharev, V.I.; Volkov, V.V.

    1985-10-01

    When MIS structures are formed by pyrolysis of silane with subsequent thermal oxidation of the film of polycrystalline silicon on sapphire and with oriented crystallization of thin layers of an indium antimonide melt on the produced structures, the highly doped silicon-silicon dioxide-InSb has a concentration of majority charge carriers of (2-5) . 10/sup 15/ cm/sup -9/ with a density of surface states of (2-8) . 10/sup 11/ ev/sup -1/ . cm/sup -2/.

  12. Torsional fatigue model for limitorque type SMB/SB/SBD actuators for motor-operated valves

    SciTech Connect (OSTI)

    Somogyi, D.; Alvarez, P.D.; Kalsi, M.S.

    1996-12-01

    Kalsi Engineering, Inc. has recently developed a computer program to predict the torsional fatigue life of Limitorque Type SMB/SB/SBD actuators for motor-operated valves under given loading levels, including those that exceed the ratings. The development effort was an outgrowth of the {open_quote}Thrust Rating Increase{close_quote} test program. The fatigue model computes all pertinent stress components and their variations as a function of the loading ramp. The cumulative damage and fatigue life due to stress cycling is computed by use of a modification of Miner`s rule. Model predictions were validated against actual cyclic loading test results.

  13. Pairing phenomenon in doubly odd neutron rich {sup 136}Sb nucleus

    SciTech Connect (OSTI)

    Laouet, N.; Benrachi, F.

    2012-06-27

    Based on p-n and n-n pairing gap energies giving by K. Kaneko et al. (2003), we make modifications on the kh5082 interaction. Calculations and study of some nuclear properties for {sup 136}Sb nucleus are developed in the framework of the nuclear shell model by means of OXBASH structure code. We get the same energetic sequence as the recent experimental values of single particle energies. The effective charge values e{sub p}=1.35e and e{sub n}=0.9e, and factors given by V. I. Isakov are used to evaluate multipole electromagnetic moments.

  14. Hybridized Nature of Pseudogap in Kondo Insulators CeRhSb and CeRhAs

    SciTech Connect (OSTI)

    Kumigashira, H.; Takahashi, T.; Yoshii, S.; Kasaya, M.

    2001-08-06

    We studied the electronic structure of Kondo insulators CeRhSb and CeRhAs using high-resolution photoemission spectroscopy. We found that the 4f -derived density of states shows a depletion (pseudogap) at E{sub F} in contrast to metallic Kondo materials. It was found that the size of the f pseudogap is smaller than that of conduction electrons (c pseudogap) while both scale well with the Kondo temperature. The present results indicate that the hybridization between 4f and conduction electrons near E{sub F} is essential for the Kondo gap in the Ce-based compounds.

  15. Hybrid Back Surface Reflector GaInAsSb Thermophotovoltaic Devices

    SciTech Connect (OSTI)

    RK Huang; CA Wang; MK Connors; GW Turner; M Dashiell

    2004-05-11

    Back surface reflectors have the potential to improve thermophotovoltaic (TPV) device performance though the recirculation of infrared photons. The ''hybrid'' back-surface reflector (BSR) TPV cell approach allows one to construct BSRs for TPV devices using conventional, high efficiency, GaInAsSb-based TPV material. The design, fabrication, and measurements of hybrid BSR-TPV cells are described. The BSR was shown to provide a 4 mV improvement in open-circuit voltage under a constant shortcircuit current, which is comparable to the 5 mV improvement theoretically predicted. Larger improvements in open-circuit voltage are expected in the future with materials improvements.

  16. Correlation of CsK2Sb photocathode lifetime with antimony thickness

    SciTech Connect (OSTI)

    Mamun, M. A.; Hernandez-Garcia, C.; Poelker, M.; Elmustafa, A. A.

    2015-06-01

    CsK2Sb photocathodes with quantum efficiency on the order of 10% at 532 nm, and lifetime greater than 90 days at low voltage, were successfully manufactured via co-deposition of alkali species emanating from an effusion source. Photocathodes were characterized as a function of antimony layer thickness and alkali consumption, inside a vacuum chamber that was initially baked, but frequently vented without re-baking. Photocathode lifetime measured at low voltage is correlated with the antimony layer thickness. Photocathodes manufactured with comparatively thick antimony layers exhibited the best lifetime. We speculate that the antimony layer serves as a reservoir, or sponge, for the alkali.

  17. McMillan-Rowell Like Oscillations in a Superconductor-InAs/GaSb-Superconductor Junction

    SciTech Connect (OSTI)

    Shi, Xiaoyan; Yu, Wenlong; Hawkins, Samuel D.; Klem, John F.; Pan, Wei

    2015-08-04

    We fabricated a superconductor (Ta)-InAs/GaSb bilayer-superconductor (Ta) junction device that has a long mean free path and can preserve the wavelike properties of particles (electrons and holes) inside the junction. Differential conductance measurements were also carried out at low temperatures in this device, and McMillan-Rowell like oscillations (MROs) were observed. A much larger Fermi velocity, compared to that from Shubnikov-de Haas oscillations, was obtained from the frequency of MROs. Possible mechanisms are discussed for this discrepancy.

  18. Long wavelength, high gain InAsSb strained-layer superlattice photoconductive detectors

    DOE Patents [OSTI]

    Biefeld, Robert M.; Dawson, L. Ralph; Fritz, Ian J.; Kurtz, Steven R.; Zipperian, Thomas E.

    1991-01-01

    A high gain photoconductive device for 8 to 12 .mu.m wavelength radiation including an active semiconductor region extending from a substrate to an exposed face, the region comprising a strained-layer superlattice of alternating layers of two different InAs.sub.1-x Sb.sub.x compounds having x>0.75. A pair of spaced electrodes are provided on the exposed face, and changes in 8 to 12 .mu.m radiation on the exposed face cause a large photoconductive gain between the spaced electrodes.

  19. Photoluminescence studies of individual and few GaSb/GaAs quantum rings

    SciTech Connect (OSTI)

    Young, M. P.; Woodhead, C. S.; Roberts, J.; Noori, Y. J.; Noble, M. T.; Krier, A.; Hayne, M.; Young, R. J.; Smakman, E. P.; Koenraad, P. M.

    2014-11-15

    We present optical studies of individual and few GaSb quantum rings embedded in a GaAs matrix. Contrary to expectation for type-II confinement, we measure rich spectra containing sharp lines. These lines originate from excitonic recombination and are observed to have resolution-limited full-width at half maximum of 200 ?eV. The detail provided by these measurements allows the characteristic type-II blueshift, observed with increasing excitation power, to be studied at the level of individual nanostructures. These findings are in agreement with hole-charging being the origin of the observed blueshift.

  20. Spin Hall effect-controlled magnetization dynamics in NiMnSb

    SciTech Connect (OSTI)

    Dürrenfeld, P. Ranjbar, M.; Gerhard, F.; Gould, C.; Molenkamp, L. W.; Åkerman, J.

    2015-05-07

    We investigate the influence of a spin current generated from a platinum layer on the ferromagnetic resonance (FMR) properties of an adjacent ferromagnetic layer composed of the halfmetallic half-Heusler material NiMnSb. Spin Hall nano-oscillator devices are fabricated, and the technique of spin torque FMR is used to locally study the magnetic properties as in-plane anisotropies and resonance fields. A change in the FMR linewidth, in accordance with the additional spin torque produced by the spin Hall effect, is present for an applied dc current. For sufficiently large currents, this should yield auto-oscillations, which however are not achievable in the present device geometry.

  1. Formation of strained interfaces in AlSb/InAs multilayers grown by molecular beam epitaxy for quantum cascade lasers

    SciTech Connect (OSTI)

    Nicolaï, J.; Warot-Fonrose, B.; Gatel, C. Ponchet, A.; Teissier, R.; Baranov, A. N.; Magen, C.

    2015-07-21

    Structural and chemical properties of InAs/AlSb interfaces have been studied by transmission electron microscopy. InAs/AlSb multilayers were grown by molecular beam epitaxy with different growth sequences at interfaces. The out-of-plane strain, determined using high resolution microscopy and geometrical phase analysis, has been related to the chemical composition of the interfaces analyzed by high angle annular dark field imaging. Considering the local strain and chemistry, we estimated the interface composition and discussed the mechanisms of interface formation for the different growth sequences. In particular, we found that the formation of the tensile AlAs-type interface is spontaneously favored due to its high thermal stability compared to the InSb-type interface. We also showed that the interface composition could be tuned using an appropriate growth sequence.

  2. Depth-dependent magnetism in epitaxial MnSb thin films: effects of surface passivation and cleaning

    SciTech Connect (OSTI)

    Aldous J. D.; Sanchez-Hanke C.; Burrows, C.W.; Maskery, I.; Brewer, M.S.; Hase, T.P.A.; Duffy, J.A.; Lees, M. Rs; Decoster, T.; Theis, W.; Quesada, A.; Schmid, A.K.; Bell, G.R.

    2012-03-15

    Depth-dependent magnetism in MnSb(0001) epitaxial films has been studied by combining experimental methods with different surface specificities: polarized neutron reflectivity, x-ray magnetic circular dichroism (XMCD), x-ray resonant magnetic scattering and spin-polarized low energy electron microscopy (SPLEEM). A native oxide {approx}4.5 nm thick covers air-exposed samples which increases the film's coercivity. HCl etching efficiently removes this oxide and in situ surface treatment of etched samples enables surface magnetic contrast to be observed in SPLEEM. A thin Sb capping layer prevents oxidation and preserves ferromagnetism throughout the MnSb film. The interpretation of Mn L{sub 3,2} edge XMCD data is discussed.

  3. SB6.0: The 6th International meeting on Synthetic Biology, July 9-11, 2013

    SciTech Connect (OSTI)

    Kahl, Linda J.

    2015-04-23

    The Synthetic Biology conference series (SBx.0) is the preeminent academic meeting in synthetic biology. Organized by the BioBricks Foundation, the SBx.0 conference series brings together leading researchers, students, industry executives, and policy makers from around the world to share, consider, debate, and plan efforts to make biology easier to engineer. Historically held every two years, the SBx.0 conferences are held in alternating locations in the United States, Europe, and Asia to encourage global participation and collaboration so that the ramifications of synthetic biology research and development are most likely to be safe ethical, and beneficial. On 9-11 July 2013, the 6th installment of the synthetic biology conference series (SB6.0) was held on the campus of Imperial College London (http://sb6.biobricks.org). The SB6.0 conference was attended by over 700 people, and many more were able to participate via video digital conference (http://sb6.biobricks.org/digital-conference/). Over the course of three days, the SB6.0 conference agenda included plenary sessions, workshops, and poster presentations covering topics ranging from the infrastructure needs arising when “Systematic Engineering Meets Biological Complexity” and design-led considerations for “Connecting People and Technologies” to discussions on “Engineering Biology for New Materials,” “Assessing Risk and Managing Biocontainment,” and “New Directions for Energy and Sustainability.” The $10,150 grant awarded by the U.S. Department of Energy (DE-SC0010233) to the BioBricks Foundation was used to provide partial reimbursement for the travel expenses of leading researchers from the United States to speak at the SB6.0 conference. A total of $9,450 was used to reimburse U.S. speakers for actual expenses related to the SB6.0 conference, including airfare (economy or coach only), ground transportation, hotel, and registration fees. In addition, $700 of the grant was used to offset

  4. Design and fabrication of 6.1-.ANG. family semiconductor devices using semi-insulating A1Sb substrate

    DOE Patents [OSTI]

    Sherohman, John W.; Coombs, III, Arthur W.; Yee, Jick Hong; Wu, Kuang Jen J.

    2007-05-29

    For the first time, an aluminum antimonide (AlSb) single crystal substrate is utilized to lattice-match to overlying semiconductor layers. The AlSb substrate establishes a new design and fabrication approach to construct high-speed, low-power electronic devices while establishing inter-device isolation. Such lattice matching between the substrate and overlying semiconductor layers minimizes the formation of defects, such as threaded dislocations, which can decrease the production yield and operational life-time of 6.1-.ANG. family heterostructure devices.

  5. Antiferromagnetism in EuCu2As2 and EuCu1.82Sb2 single crystals

    DOE PAGES-Beta [OSTI]

    Anand, V. K.; Johnston, D. C.

    2015-05-07

    Single crystals of EuCu2As2 and EuCu2Sb2 were grown from CuAs and CuSb self-flux, respectively. The crystallographic, magnetic, thermal, and electronic transport properties of the single crystals were investigated by room-temperature x-ray diffraction (XRD), magnetic susceptibility χ versus temperature T, isothermal magnetization M versus magnetic field H, specific heat Cp(T), and electrical resistivity ρ(T) measurements. EuCu2As2 crystallizes in the body-centered tetragonal ThCr2Si2-type structure (space group I4/mmm), whereas EuCu2Sb2 crystallizes in the related primitive tetragonal CaBe2Ge2-type structure (space group P4/nmm). The energy-dispersive x-ray spectroscopy and XRD data for the EuCu2Sb2 crystals showed the presence of vacancies on the Cu sites, yielding themore » actual composition EuCu1.82Sb2. The ρ(T) and Cp(T) data reveal metallic character for both EuCu2As2 and EuCu1.82Sb2. Antiferromagnetic (AFM) ordering is indicated from the χ(T),Cp(T), and ρ(T) data for both EuCu2As2 (TN = 17.5 K) and EuCu1.82Sb2 (TN = 5.1 K). In EuCu1.82Sb2, the ordered-state χ(T) and M(H) data suggest either a collinear A-type AFM ordering of Eu+2 spins S = 7/2 or a planar noncollinear AFM structure, with the ordered moments oriented in the tetragonal ab plane in either case. This ordered-moment orientation for the A-type AFM is consistent with calculations with magnetic dipole interactions. As a result, the anisotropic χ(T) and isothermal M(H) data for EuCu2As2, also containing Eu+2 spins S = 7/2, strongly deviate from the predictions of molecular field theory for collinear AFM ordering and the AFM structure appears to be both noncollinear and noncoplanar.« less

  6. VolmerWeber InAs quantum dot formation on InP (113)B substrates under the surfactant effect of Sb

    SciTech Connect (OSTI)

    Zhao, Yu Bertru, Nicolas; Folliot, Herv; Rohel, Tony; Mauger, Samuel J. C.; Koenraad, Paul M.

    2014-07-21

    We report on Sb surfactant growth of InAs nanostructures on GaAs{sub 0.51}Sb{sub 0.49} layers deposited on InP (001) and on (113)B oriented substrates. On the (001) orientation, the presence of Sb significantly favors the two-dimensional growth regime. Even after the deposition of 5 mono-layers of InAs, the epitaxial film remains flat and InAs/GaAs{sub 0.51}Sb{sub 0.49} type-II quantum wells are achieved. On (113)B substrates, same growth runs resulted in formation of high density InAs islands. Microscopic studies show that wetting layer is missing on (113)B substrates, and thus, a Volmer-Weber growth mode is concluded. These different behaviors are attributed to the surface energy changes induced by Sb atoms on surface.

  7. The Role of Anti-Phase Domains in InSb-Based Structures Grown on On-Axis and Off-Axis Ge Substrates

    SciTech Connect (OSTI)

    Debnath, M. C.; Mishima, T. D.; Santos, M. B.; Hossain, K.; Holland, O. W.

    2011-12-26

    Anti-phase domains form in InSb epilayers and InSb/Al{sub 0.20}In{sub 0.80}Sb single quantum wells when grown upon on-axis (001) Ge substrates by molecular beam epitaxy. Domain formation is partially suppressed through growth on Ge substrates with surfaces that are several degrees off the (001) or (211) axis. By using off-axis Ge substrates, room-temperature electron mobilities increased to {approx}60,000 cm{sup 2}/V-s and {approx}14,000 cm{sup 2}/V-s for a 4.0-{mu}m-thick InSb epilayer and a 25-nm InSb quantum well, respectively.

  8. RELAP5 assessment using LSTF test data SB-CL-18

    SciTech Connect (OSTI)

    Lee, S.; Chung, B.D.; Kim, H.J.

    1993-05-01

    A 5 % cold leg break test, run SB-CL-18, conducted at the Large Scale Test Facility (LSTF) was analyzed using the RELAP5/MOD2 Cycle 36.04 and the RELAP5/MOD3 Version 5m5 codes. The test SB-CL-18 was conducted with the main objective being the investigation of the thermal-hydraulic mechanisms responsible for the early core uncovery, including the manometric effect due to an asymmetric coolant holdup in the steam generator upflow and downflow side. The present analysis, carried out with the RELAP5/MOD2 and MOD3 codes, demonstrates the code`s capability to predict, with sufficient accuracy, the main phenomena occurring in the depressurization transient, both from a qualitative and quantitative point of view. Nevertheless, several differences regarding the evolution of phenomena and affecting the timing order have been pointed out in the base calculations. The sensitivity study on the break flow and the nodalization study in the components of the steam generator U-tubes and the cross-over legs were also carried out. The RELAP5/MOD3 calculation with the nodalization change resulted in good predictions of the major thermal-hydraulic phenomena and their timing order.

  9. Minority carrier lifetimes in very long-wave infrared InAs/GaInSb superlattices

    SciTech Connect (OSTI)

    Olson, Benjamin Varberg; Haugan, Heather J.; Brown, Gail J.; Kadlec, Emil Andrew; Kim, Jin K.; Shaner, Eric A.

    2016-01-01

    Here, significantly improved carrier lifetimes in very-long wave infrared InAs/GaInSb superlattice(SL) absorbers are demonstrated by using time-resolved microwave reflectance (TMR) measurements. A nominal 47.0 Å InAs/21.5 Å Ga0.75In0.25Sb SLstructure that produces an approximately 25 μm response at 10 K has a minority carrier lifetime of 140 ± 20 ns at 18 K, which is markedly long for SL absorber with such a narrow bandgap. This improvement is attributed to the strain-engineered ternary design. Such SL employs a shorter period with reduced gallium in order to achieve good optical absorption and epitaxial advantages, which ultimately leads to the improvements in the minority carrier lifetime by reducing Shockley–Read–Hall (SRH) defects. By analyzing the temperature-dependence of TMR decay data, the recombination mechanisms and trap states that currently limit the performance of this SL absorber have been identified. The results show a general decrease in the long-decay lifetime component, which is dominated by the SRH recombination at temperature below ~30 K, and by Auger recombination at temperatures above ~45 K.

  10. Minority carrier lifetimes in very long-wave infrared InAs/GaInSb superlattices

    DOE PAGES-Beta [OSTI]

    Olson, Benjamin Varberg; Haugan, Heather J.; Brown, Gail J.; Kadlec, Emil Andrew; Kim, Jin K.; Shaner, Eric A.

    2016-01-01

    Here, significantly improved carrier lifetimes in very-long wave infrared InAs/GaInSb superlattice(SL) absorbers are demonstrated by using time-resolved microwave reflectance (TMR) measurements. A nominal 47.0 Å InAs/21.5 Å Ga0.75In0.25Sb SLstructure that produces an approximately 25 μm response at 10 K has a minority carrier lifetime of 140 ± 20 ns at 18 K, which is markedly long for SL absorber with such a narrow bandgap. This improvement is attributed to the strain-engineered ternary design. Such SL employs a shorter period with reduced gallium in order to achieve good optical absorption and epitaxial advantages, which ultimately leads to the improvements in themore » minority carrier lifetime by reducing Shockley–Read–Hall (SRH) defects. By analyzing the temperature-dependence of TMR decay data, the recombination mechanisms and trap states that currently limit the performance of this SL absorber have been identified. The results show a general decrease in the long-decay lifetime component, which is dominated by the SRH recombination at temperature below ~30 K, and by Auger recombination at temperatures above ~45 K.« less

  11. Electrodeposition of InSb branched nanowires: Controlled growth with structurally tailored properties

    SciTech Connect (OSTI)

    Das, Suprem R.; Mohammad, Asaduzzaman; Janes, David B.; Akatay, Cem; Khan, Mohammad Ryyan; Alam, Muhammad A.; Maeda, Kosuke; Deacon, Russell S.; Ishibashi, Koji; Chen, Yong P.; Sands, Timothy D.

    2014-08-28

    In this article, electrodeposition method is used to demonstrate growth of InSb nanowire (NW) arrays with hierarchical branched structures and complex morphology at room temperature using an all-solution, catalyst-free technique. A gold coated, porous anodic alumina membrane provided the template for the branched NWs. The NWs have a hierarchical branched structure, with three nominal regions: a “trunk” (average diameter of 150 nm), large branches (average diameter of 100 nm), and small branches (average diameter of sub-10 nm to sub-20 nm). The structural properties of the branched NWs were studied using scanning transmission electron microscopy, transmission electron microscopy, scanning electron microscopy, x-ray diffraction, energy dispersive x-ray spectroscopy, and Raman spectroscopy. In the as-grown state, the small branches of InSb NWs were crystalline, but the trunk regions were mostly nanocrystalline with an amorphous boundary. Post-annealing of NWs at 420 °C in argon produced single crystalline structures along 〈311〉 directions for the branches and along 〈111〉 for the trunks. Based on the high crystallinity and tailored structure in this branched NW array, the effective refractive index allows us to achieve excellent antireflection properties signifying its technological usefulness for photon management and energy harvesting.

  12. CaMn2Sb2: Spin waves on a frustrated antiferromagnetic honeycomb lattice

    DOE PAGES-Beta [OSTI]

    McNally, D. E.; Simonson, J. W.; Kistner-Morris, J. J.; Smith, G. J.; Hassinger, J. E.; DeBeer-Schmidt, L.; Kolesnikov, A. I.; Zaliznyak, I.; Aronson, M. C.

    2015-05-22

    We present inelastic neutron scattering measurements of the antiferromagnetic insulator CaMn2Sb2:, which consists of corrugated honeycomb layers of Mn. The dispersion of magnetic excitations has been measured along the H and L directions in reciprocal space, with a maximum excitation energy of ≈ 24 meV. These excitations are well described by spin waves in a Heisenberg model, including first and second neighbor exchange interactions, J1 and J2, in the Mn plane and also an exchange interaction between planes. The determined ratio J2/J1 ≈ 1/6 suggests that CaMn2Sb2: is the first example of a compound that lies very close to themore » mean field tricritical point, known for the classical Heisenberg model on the honeycomb lattice, where the N´eel phase and two different spiral phases coexist. The magnitude of the determined exchange interactions reveal a mean field ordering temperature ≈ 4 times larger than the reported N´eel temperature TN = 85 K, suggesting significant frustration arising from proximity to the tricritical point.« less

  13. Heavy and light hole transport in nominally undoped GaSb substrates

    SciTech Connect (OSTI)

    Kala, Hemendra; Umana-Membreno, Gilberto A.; Jolley, Gregory; Akhavan, Nima Dehdashti; Antoszewski, Jaroslaw; Faraone, Lorenzo; Patrashin, Mikhail A.; Akahane, Kouichi

    2015-01-19

    In this work, we report results of a study of electronic transport in nominally undoped p-type GaSb wafers typically employed as substrate material for the epitaxial growth of InAs/GaInSb type-II superlattices. Magnetic field dependent Hall-effect measurements and high-resolution mobility spectrum analysis clearly indicate p-type conductivity due to carriers in both the heavy and light hole bands. The extracted hole concentrations indicate a thermal activation energy of 17.8 meV for the dominant native acceptor-like defects. A temperature-independent effective mass ratio of 9.0 ± 0.8 was determined from the ratio of measured heavy and light hole concentrations. Over the 56 K–300 K temperature range, the light hole mobility was found to be 4.7 ± 0.7 times higher than the heavy hole mobility. The measured room temperature mobilities for the light and heavy holes were 2550 cm{sup 2}/Vs and 520 cm{sup 2}/Vs, respectively.

  14. Structural, magnetic, and transport properties of Fe-doped CoTiSb epitaxial thin films

    SciTech Connect (OSTI)

    Sun, N. Y.; Zhang, Y. Q.; Che, W. R.; Shan, R.; Qin, J.

    2015-11-07

    Epitaxial intrinsic and Fe-doped CoTiSb thin films with C1{sub b} structure were grown on MgO(100) substrates by magnetron sputtering. The semiconducting-like behavior in both intrinsic and Fe-doped thin films was demonstrated by temperature dependence of longitudinal resistivity. The Fe-doped CoTiSb films with a wide range of doping concentrations can maintain semiconducting-like and magnetic properties simultaneously, while the semiconducting behavior is weakening with the increasing Fe concentration. For 21 at. % Fe-doped film, low lattice magnetic moment (around 0.65 μ{sub B}) and high resistivity (larger than 800 μΩ cm) are beneficial to its application as a magnetic electrode in spintronic devices. Anomalous Hall effect of 21 at. % Fe-doped film was also investigated and its behaviors can be treated well by recent-reported anomalous Hall scaling including the contribution of spin-phonon skew scattering.

  15. Integration of atomic layer deposited high-k dielectrics on GaSb via hydrogen plasma exposure

    SciTech Connect (OSTI)

    Ruppalt, Laura B. Cleveland, Erin R.; Champlain, James G.; Bennett, Brian R.; Prokes, Sharka M.

    2014-12-15

    In this letter we report the efficacy of a hydrogen plasma pretreatment for integrating atomic layer deposited (ALD) high-k dielectric stacks with device-quality p-type GaSb(001) epitaxial layers. Molecular beam eptiaxy-grown GaSb surfaces were subjected to a 30 minute H{sub 2}/Ar plasma treatment and subsequently removed to air. High-k HfO{sub 2} and Al{sub 2}O{sub 3}/HfO{sub 2} bilayer insulating films were then deposited via ALD and samples were processed into standard metal-oxide-semiconductor (MOS) capacitors. The quality of the semiconductor/dielectric interface was probed by current-voltage and variable-frequency admittance measurements. Measurement results indicate that the H{sub 2}-plamsa pretreatment leads to a low density of interface states nearly independent of the deposited dielectric material, suggesting that pre-deposition H{sub 2}-plasma exposure, coupled with ALD of high-k dielectrics, may provide an effective means for achieving high-quality GaSb MOS structures for advanced Sb-based digital and analog electronics.

  16. Thermoelectric device including an alloy of GeTe and AgSbTe as the P-type element

    DOE Patents [OSTI]

    Skrabek, Emanuel Andrew; Trimmer, Donald Smith

    1976-01-01

    Improved alloys suitable for thermoelectric applications and having the general formula: (AgSbTe.sub.2).sub.1.sub.-x + (GeTe).sub.x wherein x has a value of about 0.80 and 0.85, have been found to possess unexpectedly high thermoelectric properties such as efficiency index, as well as other improved physical properties.

  17. SLUDGE BATCH 7 ACCEPTANCE EVALUATION: RADIONUCLIDE CONCENTRATIONS IN TANK 51 SB7 QUALIFICATION SAMPLE PREPARED AT SRNL

    SciTech Connect (OSTI)

    Pareizs, J.; Hay, M.

    2011-02-22

    Presented in this report are radionuclide concentrations required as part of the program of qualifying Sludge Batch Seven (SB7) for processing in the Defense Waste Processing Facility (DWPF). The SB7 material is currently in Tank 51 being washed and prepared for transfer to Tank 40. The acceptance evaluation needs to be completed prior to the transfer of the material in Tank 51 to Tank 40. The sludge slurry in Tank 40 has already been qualified for DWPF and is currently being processed as SB6. The radionuclide concentrations were measured or estimated in the Tank 51 SB7 Qualification Sample prepared at Savannah River National Laboratory (SRNL). This sample was prepared from the three liter qualification sample of Tank 51 sludge slurry (HTF-51-10-125) received on September 18, 2010. The sample was delivered to SRNL where it was initially characterized in the Shielded Cells. With consultation from the Liquid Waste Organization, the qualification sample was then modified by several washes and decants, which included addition of Pu from H Canyon and sodium nitrite per the Tank Farm corrosion control program. This final slurry now has a composition expected to be similar to that of the slurry in Tank 51 after final preparations have been made for transfer of that slurry to Tank 40. Determining the radionuclide concentrations in this Tank 51 SB7 Qualification Sample is part of the work requested in Technical Task Request (TTR) No. HLW-DWPF-TTR-2010-0031. The radionuclides included in this report are needed for the DWPF Radiological Program Evaluation, the DWPF Waste Acceptance Criteria (TSR/WAC) Evaluation, and the DWPF Solid Waste Characterization Program (TTR Task I.2). Radionuclides required to meet the Waste Acceptance Product Specifications (TTR Task III.2.) will be measured at a later date after the slurry from Tank 51 has been transferred to Tank 40. Then a sample of the as-processed SB7 will be taken and transferred to SRNL for measurement of these radionuclides

  18. High thermoelectric performance of In, Yb, Ce multiple filled CoSb{sub 3} based skutterudite compounds

    SciTech Connect (OSTI)

    Ballikaya, Sedat; Department of Physics, University of Michigan, Ann Arbor, MI, 48109 ; Uzar, Neslihan; Yildirim, Saffettin; Salvador, James R.; Uher, Ctirad

    2012-09-15

    Filling voids with rare earth atoms is an effective way to lowering thermal conductivity which necessarily enhances thermoelectric properties of skutterudite compounds. Yb atom is one of the most effective species among the rare earth atoms for filling the voids in the skutterudite structure due to a large atomic mass, radius and it is intermediate valence state. In this work, we aim to find the best filling partners for Yb using different combinations of Ce and In as well as to optimize actual filling fraction in order to achieve high values of ZT. The traditional method of synthesis relying on melting-annealing and followed by spark plasma sintering was used to prepare all samples. The thermoelectric properties of four samples of Yb{sub 0.2}In{sub 0.2}Co{sub 4}Sb{sub 12}, Yb{sub 0.2}Ce{sub 0.15}Co{sub 4}Sb{sub 12}, Yb{sub 0.2}Ce{sub 0.15}In{sub 0.2}Co{sub 4}Sb{sub 12}, and Yb{sub 0.3}Ce{sub 0.15}In{sub 0.2}Co{sub 4}Sb{sub 12} (nominal) were examined based on the Seebeck coefficient, electrical conductivity, thermal conductivity, and Hall coefficient. Hall coefficient and Seebeck coefficient signs confirm that all samples are n-type skutterudite compounds. Carrier density increases with the increasing Yb+Ce content. A high power factor value of 57.7 {mu}W/K{sup 2}/cm for Yb{sub 0.2}Ce{sub 0.15}Co{sub 4}Sb{sub 12} and a lower thermal conductivity value of 2.82 W/m/K for Yb{sub 0.2}Ce{sub 0.15}In{sub 0.2}Co{sub 4}Sb{sub 12} indicate that small quantities of Ce with In may be a good partner to Yb to reduce the thermal conductivity further and thus enhance the thermoelectric performance of skutterudites. The highest ZT value of 1.43 was achieved for Yb{sub 0.2}Ce{sub 0.15}In{sub 0.2}Co{sub 4}Sb{sub 12} triple-filled skutterudite at 800 K. - Graphical abstract: Thermoelectric figure of merit of Yb{sub x}In{sub y}Ce{sub z}Co{sub 4}Sb{sub 12} (0{<=}x,y,z{<=}0.18 actual) compounds versus temperature. Highlights: Black-Right-Pointing-Pointer TE properties of Yb

  19. Non-Ideal p-n junction Diode of Sb{sub x}Se{sub 1-x}(x = 0.4, 0.5, 0.6, 0.7) Thin Films

    SciTech Connect (OSTI)

    Mustafa, Falah I.; Gupta, Shikha; Goyal, N.; Tripathi, S. K.

    2011-12-12

    We have made diodes consisting of the same alloy i.e. Sb{sub x}Se{sub 1-x}(x = 0.4, 0.5, 0.6 and 0.7), but change the concentration of Sb metal from 40% to 70% atomic weight percentage. It is observed from the Hall measurements that the nature of charge carriers have changed from p- to n-type at x = 0.6 for Sb{sub x}Se{sub 1-x}. We have measured I-V characteristics of four p-n junction diodes i.e. p-Sb{sub 2}Se{sub 3}/n-Sb{sub 3}Se{sub 2}, p-Sb{sub 2}Se{sub 3}/n-Sb{sub 7}Se{sub 3}, p-SbSe/n-Sb{sub 3}Se{sub 2}, p-SbSe/n-Sb{sub 7}Se{sub 3}. From the I-V plots we have calculated the parameters as built-in voltage (V{sub bi}), forward resistance (R{sub f}), ideal factor (n), saturation current (I{sub o}), breakdown current (I{sub Bd}) and breakdown voltage (V{sub Bd}).

  20. Ultrafast terahertz-induced response of GeSbTe phase-change materials

    SciTech Connect (OSTI)

    Shu, Michael J.; Zalden, Peter; Chen, Frank; Weems, Ben; Chatzakis, Ioannis; Xiong, Feng; Jeyasingh, Rakesh; Pop, Eric; Philip Wong, H.-S.; Hoffmann, Matthias C.; Wuttig, Matthias; Lindenberg, Aaron M.

    2014-06-23

    The time-resolved ultrafast electric field-driven response of crystalline and amorphous GeSbTe films has been measured all-optically, pumping with single-cycle terahertz pulses as a means of biasing phase-change materials on a sub-picosecond time-scale. Utilizing the near-band-gap transmission as a probe of the electronic and structural response below the switching threshold, we observe a field-induced heating of the carrier system and resolve the picosecond-time-scale energy relaxation processes and their dependence on the sample annealing condition in the crystalline phase. In the amorphous phase, an instantaneous electroabsorption response is observed, quadratic in the terahertz field, followed by field-driven lattice heating, with Ohmic behavior up to 200 kV/cm.

  1. Evaluation of the two-photon absorption characteristics of GaSb/GaAs quantum rings

    SciTech Connect (OSTI)

    Wagener, M. C.; Botha, J. R.; Carrington, P. J.; Krier, A.

    2014-07-28

    The optical parameters describing the sub-bandgap response of GaSb/GaAs quantum rings solar cells have been obtained from photocurrent measurements using a modulated pseudo-monochromatic light source in combination with a second, continuous photo-filling source. By controlling the charge state of the quantum rings, the photoemission cross-sections describing the two-photon sub-bandgap transitions could be determined independently. Temperature dependent photo-response measurements also revealed that the barrier for thermal hole emission from the quantum rings is significantly below the quantum ring localisation energy. The temperature dependence of the sub-bandgap photo-response of the solar cell is also described in terms of the photo- and thermal-emission characteristics of the quantum rings.

  2. Photocapacitance study of type-II GaSb/GaAs quantum ring solar cells

    SciTech Connect (OSTI)

    Wagener, M. C.; Botha, J. R.; Carrington, P. J.; Krier, A.

    2014-01-07

    In this study, the density of states associated with the localization of holes in GaSb/GaAs quantum rings are determined by the energy selective charging of the quantum ring distribution. The authors show, using conventional photocapacitance measurements, that the excess charge accumulated within the type-II nanostructures increases with increasing excitation energies for photon energies above 0.9?eV. Optical excitation between the localized hole states and the conduction band is therefore not limited to the ?(k?=?0) point, with pseudo-monochromatic light charging all states lying within the photon energy selected. The energy distribution of the quantum ring states could consequently be accurately related from the excitation dependence of the integrated photocapacitance. The resulting band of localized hole states is shown to be well described by a narrow distribution centered 407?meV above the GaAs valence band maximum.

  3. Evaluation of electron mobility in InSb quantum wells by means of percentage-impact

    SciTech Connect (OSTI)

    Mishima, T. D.; Edirisooriya, M.; Santos, M. B.

    2014-05-15

    In order to quantitatively analyze the contribution of each scattering factor toward the total carrier mobility, we use a new convenient figure-of-merit, named a percentage impact. The mobility limit due to a scattering factor, which is widely used to summarize a scattering analysis, has its own advantage. However, a mobility limit is not quite appropriate for the above purpose. A comprehensive understanding of the difference in contribution among many scattering factors toward the total carrier mobility can be obtained by evaluating percentage impacts of scattering factors, which can be straightforwardly calculated from their mobility limits and the total mobility. Our percentage impact analysis shows that threading dislocation is one of the dominant scattering factors for the electron transport in InSb quantum wells at room temperature.

  4. Ultrafast dynamics of type-II GaSb/GaAs quantum dots

    SciTech Connect (OSTI)

    Komolibus, K.; Piwonski, T.; Gradkowski, K.; Reyner, C. J.; Liang, B.; Huffaker, D. L.; Huyet, G.; Houlihan, J.

    2015-01-19

    In this paper, room temperature two-colour pump-probe spectroscopy is employed to study ultrafast carrier dynamics in type-II GaSb/GaAs quantum dots. Our results demonstrate a strong dependency of carrier capture/escape processes on applied reverse bias voltage, probing wavelength and number of injected carriers. The extracted timescales as a function of both forward and reverse bias may provide important information for the design of efficient solar cells and quantum dot memories based on this material. The first few picoseconds of the dynamics reveal a complex behaviour with an interesting feature, which does not appear in devices based on type-I materials, and hence is linked to the unique carrier capture/escape processes possible in type-II structures.

  5. Structural and optical properties of Sb{sub 2}S{sub 3} nanocrystals in glass

    SciTech Connect (OSTI)

    Mishra, Rakesh K. Kashyap, Raman Vedeshwar, A. G. Tandon, R. P.

    2014-04-24

    In this work conventional solid state precipitation method is adopted to fabricate Sb{sub 2}S{sub 3} nanocrystals in glass. The glass composition is optimized for proper host glass matrix to grow antimony trisulphide semiconductor quantum dots. The dot size is modified by heat treatment of glass samples in the temperature range from 550°C to 700°C for various time durations. Structural studies are carried out by X-ray diffraction and transmission electron microscopy and nanoparticles with size ranges from 8 nm to 70 nm are obtained. Quantum dots so grown were further characterized by optical absorption spectroscopy and a blue shift is observed for absorption edge energy that conform the quantum confinement effect.

  6. Temperature coefficients for GaInP/GaAs/GaInNAsSb solar cells

    SciTech Connect (OSTI)

    Aho, Arto; Isoaho, Riku; Tukiainen, Antti; Polojärvi, Ville; Aho, Timo; Raappana, Marianna; Guina, Mircea

    2015-09-28

    We report the temperature coefficients for MBE-grown GaInP/GaAs/GaInNAsSb multijunction solar cells and the corresponding single junction sub-cells. Temperature-dependent current-voltage measurements were carried out using a solar simulator equipped with a 1000 W Xenon lamp and a three-band AM1.5D simulator. The triple-junction cell exhibited an efficiency of 31% at AM1.5G illumination and an efficiency of 37–39% at 70x real sun concentration. The external quantum efficiency was also measured at different temperatures. The temperature coefficients up to 80°C, for the open circuit voltage, the short circuit current density, and the conversion efficiency were determined to be −7.5 mV/°C, 0.040 mA/cm{sup 2}/°C, and −0.09%/°C, respectively.

  7. Spectroscopy and capacitance measurements of tunneling resonances in an Sb-implanted point contact.

    SciTech Connect (OSTI)

    Wendt, Joel Robert; Rahman, Rajib; Ten Eyck, Gregory A.; Eng, Kevin; Carroll, Malcolm S.; Young, Ralph Watson; Lilly, Michael Patrick; Stalford, Harold Lenn; Bishop, Nathaniel; Bielejec, Edward Salvador

    2010-08-01

    We fabricated a split-gate defined point contact in a double gate enhancement mode Si-MOS device, and implanted Sb donor atoms using a self-aligned process. E-beam lithography in combination with a timed implant gives us excellent control over the placement of dopant atoms, and acts as a stepping stone to focused ion beam implantation of single donors. Our approach allows us considerable latitude in experimental design in-situ. We have identified two resonance conditions in the point contact conductance as a function of split gate voltage. Using tunneling spectroscopy, we probed their electronic structure as a function of temperature and magnetic field. We also determine the capacitive coupling between the resonant feature and several gates. Comparison between experimental values and extensive quasi-classical simulations constrain the location and energy of the resonant level. We discuss our results and how they may apply to resonant tunneling through a single donor.

  8. Electronic and optical properties of TiCoSb under different pressures

    SciTech Connect (OSTI)

    Xu Bin; Zhang Jing; Liang Jianchu; Gao Guoying; Yi Lin

    2012-08-15

    The electronic structure and optical properties of TiCoSb are studied by the first-principles calculation. It is found that the band gaps increase with the pressure increasing. It is noted that the increase of the band gap is due to the electrons of Ti 3d and Co 3d of the valence band (VB) shifting away from the Fermi level. Our calculation indicates that TiCoSb has the large density of state near the Fermi level; moreover, the changes of the density of states near the Fermi level mainly are caused by Ti 3d and Co 3d under the different pressures. It is noted that the absorption edge increases with an increase of pressure. As pressure increases, the static dielectric constants {epsilon}{sub 1}(0) decrease. All peaks of the imaginary part of the dielectric function {epsilon}{sub 2}({omega}) move towards higher energies within increasing pressure. - Graphical abstract: The first peak positions of the absorption spectrum increase and shift the high energy with an increase of pressure. The buleshift of the absorption edge could be observed. Highlights: Black-Right-Pointing-Pointer It is noted that the increase of the band gap is due to the electrons of Ti 3d and Co 3d of VB moving away from the Fermi level. Black-Right-Pointing-Pointer It is noted that the absorption edge increases with an increase of pressure. Black-Right-Pointing-Pointer As pressure increases, the static dielectric constant {epsilon}{sub 1}(0) decreases. Black-Right-Pointing-Pointer All peaks of the imaginary part of the dielectric function {epsilon}{sub 2}({omega}) move to wards higher energies within creasing pressure.

  9. RELAP5/MOD2 assessment, OECD-LOFT small break experiment LP-SB-03

    SciTech Connect (OSTI)

    Guntay, S. )

    1990-04-01

    An analysis of the experimental results and post-test calculations using RELAP5/MOD2 carried out for OECD-LOFT small break experiment LP-SB-3 are presented. Experiment LP-SB-3 was conducted on March 5, 1984 in Loss-of-Fluid Test (LOFT) facility located at the Idaho National Engineering Laboratory (INEL). The experiment simulated a small cold leg break, with concurrent loss of high pressure injection system, and cooldown and recovery by feed and bleed of the steam generator secondary side and accumulator injection, respectively. The analysis was under taken as a part of a program at EIR aimed at developing experience in using the latest generation of best estimate Loss of Coolant Accident (LOCA) analysis computer codes, and to improve understanding of Small Break LOCA transients and as well as a part of a program aimed at assessing the RELAP5/MOD2 code. The latest available version (Cycle 33 to 36.1) of the code was used. The particular test selected for the analysis included several phenomena potentially relevant to any PWR plant operation in Switzerland. This report documents a short post-test analysis of the experiment emphasizing the results of additional analysis performed during the course of this task. RELAP5/MOD2 input model and results of the post-test calculation are documented. Included in the report are the results of a sensitivity analysis which show the predicted thermal-hydraulic response to a different input model. 7 refs., 55 figs., 2 tabs.

  10. Improvement of reliability and power consumption for SnSb{sub 4} phase change film composited with Ga{sub 3}Sb{sub 7} by superlattice-like method

    SciTech Connect (OSTI)

    Hu, Yifeng; Zhai, Jiwei; Zeng, Huarong; Song, Sannian; Song, Zhitang

    2015-05-07

    Superlattice-like (SLL) SnSb{sub 4}/Ga{sub 3}Sb{sub 7} (SS/GS) thin films were investigated through in-situ film resistance measurement. The optical band gap was derived from the transmittance spectra by using a UV-visible-NIR (ultraviolet-visible-near infrared) spectrophotometer. Transmission electron microscopy was used to observe the micro-structure before and after annealing. Phase change memory cells based on the SLL [SS(3 nm)/GS(4.5 nm)]{sub 7} thin films were fabricated to test and verify the operation consumption and switching endurance. The scanning thermal microscopy was used to probe the nanoscale thermal property.

  11. Influence of in-situ annealing ambient on p-type conduction in dual ion beam sputtered Sb-doped ZnO thin films

    SciTech Connect (OSTI)

    Pandey, Sushil Kumar; Kumar Pandey, Saurabh; Awasthi, Vishnu; Mukherjee, Shaibal; Gupta, M.; Deshpande, U. P.

    2013-08-12

    Sb-doped ZnO (SZO) films were deposited on c-plane sapphire substrates by dual ion beam sputtering deposition system and subsequently annealed in-situ in vacuum and in various proportions of O{sub 2}/(O{sub 2} + N{sub 2})% from 0% (N{sub 2}) to 100% (O{sub 2}). Hall measurements established all SZO films were p-type, as was also confirmed by typical diode-like rectifying current-voltage characteristics from p-ZnO/n-ZnO homojunction. SZO films annealed in O{sub 2} ambient exhibited higher hole concentration as compared with films annealed in vacuum or N{sub 2} ambient. X-ray photoelectron spectroscopic analysis confirmed that Sb{sup 5+} states were more preferable in comparison to Sb{sup 3+} states for acceptor-like Sb{sub Zn}-2V{sub Zn} complex formation in SZO films.

  12. Lattice constant grading in the Al.sub.y Ga.sub.1-y As.sub.1-x Sb.sub.x alloy system

    DOE Patents [OSTI]

    Moon, Ronald L.

    1980-01-01

    Liquid phase epitaxy is employed to grow a lattice matched layer of GaAsSb on GaAs substrates through the compositional intermediary of the III-V alloy system AlGaAsSb which acts as a grading layer. The Al constituent reaches a peak atomic concentration of about 6% within the first 2.5 .mu.m of the transition layer, then decreases smoothly to about 1% to obtain a lattice constant of 5.74 A. In the same interval the equilibrium concentration of Sb smoothly increases from 0 to about 9 atomic percent to form a surface on which a GaAsSb layer having the desired energy bandgap of 1.1 ev for one junction of an optimized dual junction photolvoltaic device. The liquid phase epitaxy is accomplished with a step cooling procedure whereby dislocation defects are more uniformly distributed over the surface of growing layer.

  13. Lattice constant grading in the Al.sub.y Ca.sub.1-y As.sub.1-x Sb.sub.x alloy system

    DOE Patents [OSTI]

    Moon, Ronald L.

    1981-01-01

    Liquid phase epitaxy is employed to grow a lattice matched layer of GaAsSb on GaAs substrates through the compositional intermediary of the III-V alloy system AlGaAsSb which acts as a grading layer. The Al constituent reaches a peak atomic concentration of about 6% within the first 2.5.mu.m of the transition layer, then decreases smoothly to about 1% to obtain a lattice constant of 5.74 A. In the same interval the equilibrium concentration of Sb smoothly increases from 0 to about 9 atomic percent to form a surface on which a GaAsSb layer having the desired energy bandgap of 1.1 ev for one junction of an optimized dual junction photovoltaic device. The liquid phase epitaxy is accomplished with a step cooling procedure whereby dislocation defects are more uniformly distributed over the surface of the growing layer.

  14. The effects of surface bond relaxation on electronic structure of Sb{sub 2}Te{sub 3} nano-films by first-principles calculation

    SciTech Connect (OSTI)

    Li, C. Zhao, Y. F.; Fu, C. X.; Gong, Y. Y.; Chi, B. Q.; Sun, C. Q.

    2014-10-15

    The effects of vertical compressive stress on Sb{sub 2}Te{sub 3} nano-films have been investigated by the first principles calculation, including stability, electronic structure, crystal structure, and bond order. It is found that the band gap of nano-film is sensitive to the stress in Sb{sub 2}Te{sub 3} nano-film and the critical thickness increases under compressive stress. The band gap and band order of Sb{sub 2}Te{sub 3} film has been affected collectively by the surface and internal crystal structures, the contraction ratio between surface bond length of nano-film and the corresponding bond length of bulk decides the band order of Sb{sub 2}Te{sub 3} film.

  15. Visible-light absorption and large band-gap bowing of GaN1-xSbx from first principles

    SciTech Connect (OSTI)

    Sheetz, R. Michael; Richter, Ernst; Andriotis, Antonis N.; Lisenkov, Sergey; Pendyala, Chandrashekhar; Sunkara, Mahendra K.; Menon, Madhu

    2011-08-01

    Applicability of the Ga(Sbx)N1-x alloys for practical realization of photoelectrochemical water splitting is investigated using first-principles density functional theory incorporating the local density approximation and generalized gradient approximation plus the Hubbard U parameter formalism. Our calculations reveal that a relatively small concentration of Sb impurities is sufficient to achieve a significant narrowing of the band gap, enabling absorption of visible light. Theoretical results predict that Ga(Sbx)N1-x alloys with 2-eV band gaps straddle the potential window at moderate to low pH values, thus indicating that dilute Ga(Sbx)N1-x alloys could be potential candidates for splitting water under visible light irradiation.

  16. Atomistic modeling and HAADF investigations of misfit and threading dislocations in GaSb/GaAs hetero-structures for applications in high electron mobility transistors

    SciTech Connect (OSTI)

    Ruterana, Pierre Wang, Yi Chen, Jun Chauvat, Marie-Pierre; El Kazzi, S.; Deplanque, L.; Wallart, X.

    2014-10-06

    A detailed investigation on the misfit and threading dislocations at GaSb/GaAs interface has been carried out using molecular dynamics simulation and quantitative electron microscopy techniques. The sources and propagation of misfit dislocations have been elucidated. The nature and formation mechanisms of the misfit dislocations as well as the role of Sb on the stability of the Lomer configuration have been explained.

  17. Soft chemical synthesis of Ag{sub 3}SbS{sub 3} with efficient and recyclable visible light photocatalytic properties

    SciTech Connect (OSTI)

    Gusain, Meenakshi; Rawat, Pooja; Nagarajan, Rajamani

    2014-12-15

    Highlights: Highly crystalline Ag{sub 3}SbS{sub 3} synthesized using soft chemical approach. First time report of photocatalytic activity of Ag{sub 3}SbS{sub 3}. Ag{sub 3}SbS{sub 3} degraded the harmful organic dyes rapidly under visible radiation. Pseudo first order kinetics have been followed in these sets of reactions. Up to 90% of Methylene Blue degraded even after 4th cycle of catalyst reuse. Structure of catalyst is intact after reuse. As the catalyst is heavy, its separation after use is quite simple. - Abstract: Application of Ag{sub 3}SbS{sub 3}, obtained by soft chemical approach involving rapid reaction of air stable metalthiourea complexes in ethylene glycol medium, as visible light photocatalyst for the degradation of dye solutions was investigated. Ag{sub 3}SbS{sub 3} was confirmed by high resolution powder X-ray diffraction pattern and its no defined morphology was present in SEM images. From UVvis spectroscopy measurements, optical band gap of 1.77 eV was deduced for Ag{sub 3}SbS{sub 3}. Rapid degradation kinetics and recyclability was exhibited by Ag{sub 3}SbS{sub 3} towards Methylene Blue, Methyl Orange, Malachite Green, and Rhodamine 6G dye solutions under visible radiation. All these processes followed pseudo first order kinetics. High surface area (6.39 m{sup 2}/g), with mesopores (3.81 nm), arising from solvent mediated synthesis of Ag{sub 3}SbS{sub 3} has been correlated to its catalytic activity.

  18. Phase transitions in double perovskite Sr{sub 2}ScSbO{sub 6}: An Ab-initio study

    SciTech Connect (OSTI)

    Ray, Rajyavardhan; Kumar, Uday; Sinha, T. P.

    2014-04-24

    First Principles study of the electronic properties of recently synthesized double perovskite Sr{sub 2}ScSbO{sub 6} have been performed using density functional theory. With increasing temperature, the Sr compound undergoes three structural phase transitions at 400K, 550K and 650K approximately, leading to the following sequence of phases: P21/n ? I2/m ? I4/m ? Fm-3m. Starting from the monoclinic phase P21/n at room temperature, resulting from the Sc/Sb ordering, the electronic structure for the tetragonal I4/m at 613K and cubic Fm-3m for T?660K has been studied in terms of the density of states and band-structure. Presence of large band gap, both direct and indirect, has been reported and analyzed.

  19. Effect of antimony on the deep-level traps in GaInNAsSb thin films

    SciTech Connect (OSTI)

    Islam, Muhammad Monirul Miyashita, Naoya; Ahsan, Nazmul; Okada, Yoshitaka; Sakurai, Takeaki; Akimoto, Katsuhiro

    2014-09-15

    Admittance spectroscopy has been performed to investigate the effect of antimony (Sb) on GaInNAs material in relation to the deep-level defects in this material. Two electron traps, E1 and E2 at an energy level 0.12 and 0.41?eV below the conduction band (E{sub C}), respectively, were found in undoped GaInNAs. Bias-voltage dependent admittance confirmed that E1 is an interface-type defect being spatially localized at the GaInNAs/GaAs interface, while E2 is a bulk-type defect located around mid-gap of GaInNAs layer. Introduction of Sb improved the material quality which was evident from the reduction of both the interface and bulk-type defects.

  20. CdSe/CdTe type-II superlattices grown on GaSb (001) substrates by molecular beam epitaxy

    SciTech Connect (OSTI)

    Li Jingjing; Liu Shi; Wang Shumin; Ding Ding; Johnson, Shane R.; Zhang Yonghang; Liu Xinyu; Furdyna, Jacek K.; Smith, David J.

    2012-03-19

    CdSe/CdTe superlattices are grown on GaSb substrates using molecular beam epitaxy. X-ray diffraction measurements and cross-sectional transmission electron microscopy images indicate high crystalline quality. Photoluminescence (PL) measurements show the effective bandgap varies with the superlattice layer thicknesses and confirm the CdSe/CdTe heterostructure has a type-II band edge alignment. The valence band offset between unstrained CdTe and CdSe is determined as 0.63 {+-} 0.06 eV by fitting the measured PL peak positions using the envelope function approximation and the Kronig-Penney model. These results suggest that CdSe/CdTe superlattices are promising candidates for multi-junction solar cells and other optoelectronic devices based on GaSb substrates.

  1. Studies of scattering mechanisms in gate tunable InAs/(Al,Ga)Sb two dimensional electron gases

    SciTech Connect (OSTI)

    Shojaei, B.; McFadden, A.; Schultz, B. D.; Shabani, J.; Palmstrøm, C. J.

    2015-06-01

    A study of scattering mechanisms in gate tunable two dimensional electron gases confined to InAs/(Al,Ga)Sb heterostructures with varying interface roughness and dislocation density is presented. By integrating an insulated gate structure the evolution of the low temperature electron mobility and single-particle lifetime was determined for a previously unexplored density regime, 10{sup 11}–10{sup 12 }cm{sup −2}, in this system. Existing theoretical models were used to analyze the density dependence of the electron mobility and single particle lifetime in InAs quantum wells. Scattering was found to be dominated by charged dislocations and interface roughness. It was demonstrated that the growth of InAs quantum wells on nearly lattice matched GaSb substrate results in fewer dislocations, lower interface roughness, and improved low temperature transport properties compared to growth on lattice mismatched GaAs substrates.

  2. Methods for chemical recovery of non-carrier-added radioactive tin from irradiated intermetallic Ti-Sb targets

    DOE Patents [OSTI]

    Lapshina, Elena V.; Zhuikov, Boris L.; Srivastava, Suresh C.; Ermolaev, Stanislav V.; Togaeva, Natalia R.

    2012-01-17

    The invention provides a method of chemical recovery of no-carrier-added radioactive tin (NCA radiotin) from intermetallide TiSb irradiated with accelerated charged particles. An irradiated sample of TiSb can be dissolved in acidic solutions. Antimony can be removed from the solution by extraction with dibutyl ether. Titanium in the form of peroxide can be separated from tin using chromatography on strong anion-exchange resin. In another embodiment NCA radiotin can be separated from iodide solution containing titanium by extraction with benzene, toluene or chloroform. NCA radiotin can be finally purified from the remaining antimony and other impurities using chromatography on silica gel. NCA tin-117m can be obtained from this process. NCA tin-117m can be used for labeling organic compounds and biological objects to be applied in medicine for imaging and therapy of various diseases.

  3. Demonstration of long minority carrier lifetimes in very narrow bandgap ternary InAs/GaInSb superlattices

    DOE PAGES-Beta [OSTI]

    Olson, Benjamin Varberg; Kim, Jin K.; Kadlec, Emil Andrew; Shaner, Eric A.; Haugan, Heather J.; Brown, Gail J.

    2015-09-28

    Minority carrier lifetimes in very long wavelength infrared (VLWIR) InAs/GaInSb superlattices (SLs) are reported using time-resolved microwave reflectance measurements. A strain-balanced ternary SL absorber layer of 47.0 Å InAs/21.5 Å Ga0.75In0.25Sb, corresponding to a bandgap of ~50 meV, is found to have a minority carrier lifetime of 140 ± 20 ns at ~18 K. This lifetime is extraordinarily long, when compared to lifetime values previously reported for other VLWIR SL detector materials. As a result, this enhancement is attributed to the strain-engineered ternary design, which offers a variety of epitaxial advantages and ultimately leads to a reduction of defect-mediated recombinationmore » centers.« less

  4. Demonstration of long minority carrier lifetimes in very narrow bandgap ternary InAs/GaInSb superlattices

    SciTech Connect (OSTI)

    Olson, Benjamin Varberg; Kim, Jin K.; Kadlec, Emil Andrew; Shaner, Eric A.; Haugan, Heather J.; Brown, Gail J.

    2015-09-28

    Minority carrier lifetimes in very long wavelength infrared (VLWIR) InAs/GaInSb superlattices (SLs) are reported using time-resolved microwave reflectance measurements. A strain-balanced ternary SL absorber layer of 47.0 Å InAs/21.5 Å Ga0.75In0.25Sb, corresponding to a bandgap of ~50 meV, is found to have a minority carrier lifetime of 140 ± 20 ns at ~18 K. This lifetime is extraordinarily long, when compared to lifetime values previously reported for other VLWIR SL detector materials. As a result, this enhancement is attributed to the strain-engineered ternary design, which offers a variety of epitaxial advantages and ultimately leads to a reduction of defect-mediated recombination centers.

  5. On the electronic properties of GaSb irradiated with reactor neutrons and its charge neutrality level

    SciTech Connect (OSTI)

    Boiko, V. M.; Brudnii, V. N.; Ermakov, V. S.; Kolin, N. G.; Korulin, A. V.

    2015-06-15

    The electronic properties and the limiting position of the Fermi level in p-GaSb crystals irradiated with full-spectrum reactor neutrons at up to a fluence of 8.6 × 10{sup 18} cm{sup −2} are studied. It is shown that the irradiation of GaSb with reactor neutrons results in an increase in the concentration of free holes to p{sub lim} = (5−6) × 10{sup 18} cm{sup −3} and in pinning of the Fermi level at the limiting position F{sub lim} close to E{sub V} + 0.02 eV at 300 K. The effect of the annealing of radiation defects in the temperature range 100–550°C is explored.

  6. Climate Leadership Conference (Seattle, WA)

    Energy.gov [DOE]

    Sustainability leaders from the private, public, academic, and non-profit communities meet to explore market transformation, carbon management, and building climate resilience on an annual basis.

  7. Atomic-resolution study of polarity reversal in GaSb grown on Si by scanning transmission electron microscopy

    SciTech Connect (OSTI)

    Hosseini Vajargah, S.; Woo, S. Y.; Botton, G. A.; Ghanad-Tavakoli, S.; Kleiman, R. N.; Preston, J. S.

    2012-11-01

    The atomic-resolved reversal of the polarity across an antiphase boundary (APB) was observed in GaSb films grown on Si by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). The investigation of the interface structure at the origin of the APB reveals that coalescence of two domains with Ga-prelayer and Sb-prelayer causes the sublattice reversal. The local strain and lattice rotation distributions of the APB, attributed to the discordant bonding length at the APB with the surrounding GaSb lattice, were further studied using the geometric phase analysis technique. The crystallographic characteristics of the APBs and their interaction with other planar defects were observed with HAADF-STEM. The quantitative agreement between experimental and simulated images confirms the observed polarities in the acquired HAADF-STEM data. The self-annihilation mechanism of the APBs is addressed based on the rotation induced by anti-site bonds and APBs' faceting.

  8. Impact of thermal annealing on bulk InGaAsSbN materials grown by metalorganic vapor phase epitaxy

    SciTech Connect (OSTI)

    Kim, T. W.; Mawst, L. J.; Kim, K.; Lee, J. J.; Kuech, T. F.; Wells, N. P.; LaLumondiere, S. D.; Sin, Y.; Lotshaw, W. T.; Moss, S. C.

    2014-02-03

    Two different thermal annealing techniques (rapid thermal annealing (RTA) and in-situ post-growth annealing in the metalorganic vapor phase epitaxy (MOVPE) chamber) were employed to investigate their impact on the optical characteristics of double-heterostructures (DH) of InGaAsSbN/GaAs and on the performance of single-junction solar cell structures, all grown by MOVPE. We find that an optimized RTA procedure leads to a similar improvement in the photoluminescence (PL) intensity compared with material employing a multi-step optimized anneal within the MOVPE reactor. Time-resolved photoluminescence techniques at low temperature (LT) and room temperature (RT) were performed to characterize the carrier dynamics in bulk InGaAsSbN layers. Room temperature carrier lifetimes were found to be similar for both annealing methods, although the LT-PL (16?K) measurements of the MOVPE-annealed sample found longer lifetimes than the RTA-annealed sample (680?ps vs. 260?ps) for the PL measurement energy of 1.24?eV. InGaAsSbN-based single junction solar cells processed with the optimized RTA procedure exhibited an enhancement of the electrical performance, such as improvements in open circuit voltage, short circuit current, fill factor, and efficiency over solar cells subjected to the in-situ MOVPE annealing technique.

  9. Synthesis of nanocrystalline thin films of gold on the surface of GaSb by swift heavy ion

    SciTech Connect (OSTI)

    Jadhav, Vidya; Dubey, S. K.; Yadav, A. D.; Singh, A.

    2013-02-05

    Thin films of gold ({approx}100 nm thick) were deposited on p-type GaSb substrates. These samples were irradiated with 100 MeV Fe{sup 7+}ions for the fluence of 1 Multiplication-Sign 10{sup 13} and 1 Multiplication-Sign 10{sup 14} ions cm{sup -2}. After irradiation, samples were characterized using AFM, UV-VIS -NIR, X-Ray Diffraction techniques. AFM studies showed the presence of clusters on the surface of GaSb. R.M.S. roughness of the sample was found to increase w.r.t ion fluence. Absorption coefficient obtained from the Ultra violet - Visible NIR (UV-VIS -NIR) spectra of the samples irradiated with various fluences compared with non irradiated GaSb. The annealing experiment showed a significant improvement in the absorption coefficient after rapid thermal annealing at temperature of 400 Degree-Sign C. X-Ray Diffraction study reveals different orientations of Au film.

  10. Enhanced thermoelectric performance and novel nanopores in AgSbTe{sub 2} prepared by melt spinning

    SciTech Connect (OSTI)

    Du, Baoli; Li, Han; Xu, Jingjing; Tang, Xinfeng; Uher, Ctirad

    2011-01-15

    We report a melt-spinning spark-plasma-sintering synthesis process of the polycrystalline p-type material composed of AgSbTe{sub 2} coarse grains and evenly formed 5-10 nm pores that occur primarily on the surface of matrix grains. The formation mechanism of nanopores and their influences on the thermoelectric properties have been studied and correlated. Microstructure analysis shows that the as-prepared sample can be regarded as a nanocomposite of matrix and in situ generated nanopores evenly coated on matrix grains. For the single-phase component and the possible energy-filter effect caused by the nanopores, the electrical transport properties are improved. Moreover, the thermal conductivity is significantly reduced by strong phonon scattering effect resulted from the nanopores. The thermoelectric performance of the as prepared sample enhances greatly and a ZT of 1.65 at 570 K is achieved, increasing{approx}200% compared with the sample prepared by traditional melt and slow-cooling method. -- Graphical abstract: Representative nanostructure of AgSbTe{sub 2} sample (a) ribbons obtained after melt spinning (b) bulk AgSbTe{sub 2} material obtained after spark plasma sintering. Display Omitted

  11. Electron interactions and Dirac fermions in graphene-Ge{sub 2}Sb{sub 2}Te{sub 5} superlattices

    SciTech Connect (OSTI)

    Sa, Baisheng; Sun, Zhimei

    2014-06-21

    Graphene based superlattices have been attracted worldwide interest due to the combined properties of the graphene Dirac cone feature and all kinds of advanced functional materials. In this work, we proposed a novel series of graphene-Ge{sub 2}Sb{sub 2}Te{sub 5} superlattices based on the density functional theory calculations. We demonstrated the stability in terms of energy and lattice dynamics for such kind of artificial materials. The analysis of the electronic structures unravels the gap opening nature at Dirac cone of the insert graphene layer. The Dirac fermions in the graphene layers are strongly affected by the electron spin orbital coupling in the Ge{sub 2}Sb{sub 2}Te{sub 5} layers. The present results show the possible application in phase-change data storage of such kind of superlattice materials, where the Ge{sub 2}Sb{sub 2}Te{sub 5} layers exhibit as the phase-change data storage media and the graphene layer works as the electrode, probe, and heat conductor.

  12. Competing covalent and ionic bonding in Ge-Sb-Te phase change materials

    DOE PAGES-Beta [OSTI]

    Subedi, Alaska; Siegrist, Theo; Singh, David J.; Mukhopadhyay, Saikat; Sun, Jifeng

    2016-05-19

    Ge2Sb2Te5 and related phase change materials are highly unusual in that they can be readily transformed between amorphous and crystalline states using very fast melt, quench, anneal cycles, although the resulting states are extremely long lived at ambient temperature. These states have remarkably different physical properties including very different optical constants in the visible in strong contrast to common glass formers such as silicates or phosphates. This behavior has been described in terms of resonant bonding, but puzzles remain, particularly regarding different physical properties of crystalline and amorphous phases. Here we show that there is a strong competition between ionicmore » and covalent bonding in cubic phase providing a link between the chemical basis of phase change memory property and origins of giant responses of piezoelectric materials (PbTiO3, BiFeO3). This has important consequences for dynamical behavior in particular leading to a simultaneous hardening of acoustic modes and softening of high frequency optic modes in crystalline phase relative to amorphous. As a result, this different bonding in amorphous and crystalline phases provides a direct explanation for different physical properties and understanding of the combination of long time stability and rapid switching and may be useful in finding new phase change compositions with superior properties.« less

  13. The magnetic structure of EuCu2Sb2

    SciTech Connect (OSTI)

    Ryan, D. H.; Cadogan, J. M.; Anand, V. K.; Johnston, D. C.; Flacau, R.

    2015-05-06

    Antiferromagnetic ordering of EuCu2Sb2 which forms in the tetragonal CaBe2Ge2-type structure (space group P4/nmm #129) has been studied using neutron powder diffraction and 151Eu Mssbauer spectroscopy. The room temperature 151Eu isomer shift of 12.8(1) mm/s shows the Eu to be divalent, while the 151Eu hyperfine magnetic field (Bhf) reaches 28.7(2) T at 2.1 K, indicating a full Eu2+ magnetic moment. Bhf(T) follows a smooth $S=\\frac{7}{2}$ Brillouin function and yields an ordering temperature of 5.1(1) K. Refinement of the neutron diffraction data reveals a collinear A-type antiferromagnetic arrangement with the Eu moments perpendicular to the tetragonal c-axis. As a result, the refined Eu magnetic moment at 0.4 K is 7.08(15) ?B which is the full free-ion moment expected for the Eu2+ ion with $S=\\frac{7}{2}$ and a spectroscopic splitting factor of g = 2.

  14. Influence of interstitial Mn on magnetism in room-temperature ferromagnet Mn(1+delta)Sb

    DOE PAGES-Beta [OSTI]

    Taylor, Alice E; Berlijn, Tom; Hahn, Steven E; May, Andrew F; Williams, Travis J; Poudel, Lekhanath N; Calder, Stuart A; Fishman, Randy Scott; Stone, Matthew B; Aczel, Adam A; et al

    2015-01-01

    We report elastic and inelastic neutron scattering measurements of the high-TC ferromagnet Mn(1+delta)Sb. Measurements were performed on a large, TC = 434 K, single crystal with interstitial Mn content of delta=0.13. The neutron diffraction results reveal that the interstitial Mn has a magnetic moment, and that it is aligned antiparallel to the main Mn moment. We perform density functional theory calculations including the interstitial Mn, and find the interstitial to be magnetic in agreement with the diffraction data. The inelastic neutron scattering measurements reveal two features in the magnetic dynamics: i) a spin-wave-like dispersion emanating from ferromagnetic Bragg positions (Hmore » K 2n), and ii) a broad, non-dispersive signal centered at forbidden Bragg positions (H K 2n+1). The inelastic spectrum cannot be modeled by simple linear spin-wave theory calculations, and appears to be significantly altered by the presence of the interstitial Mn ions. The results show that the influence of the int« less

  15. Activity of the kinesin spindle protein inhibitor ispinesib (SB-715992) in models of breast cancer

    SciTech Connect (OSTI)

    Purcell, James W; Davis, Jefferson; Reddy, Mamatha; Martin, Shamra; Samayoa, Kimberly; Vo, Hung; Thomsen, Karen; Bean, Peter; Kuo, Wen Lin; Ziyad, Safiyyah; Billig, Jessica; Feiler, Heidi S; Gray, Joe W; Wood, Kenneth W; Cases, Sylvaine

    2009-06-10

    Ispinesib (SB-715992) is a potent inhibitor of kinesin spindle protein (KSP), a kinesin motor protein essential for the formation of a bipolar mitotic spindle and cell cycle progression through mitosis. Clinical studies of ispinesib have demonstrated a 9% response rate in patients with locally advanced or metastatic breast cancer, and a favorable safety profile without significant neurotoxicities, gastrointestinal toxicities or hair loss. To better understand the potential of ispinesib in the treatment of breast cancer we explored the activity of ispinesib alone and in combination several therapies approved for the treatment of breast cancer. We measured the ispinesib sensitivity and pharmacodynamic response of breast cancer cell lines representative of various subtypes in vitro and as xenografts in vivo, and tested the ability of ispinesib to enhance the anti-tumor activity of approved therapies. In vitro, ispinesib displayed broad anti-proliferative activity against a panel of 53 breast cell-lines. In vivo, ispinesib produced regressions in each of five breast cancer models, and tumor free survivors in three of these models. The effects of ispinesib treatment on pharmacodynamic markers of mitosis and apoptosis were examined in vitro and in vivo, revealing a greater increase in both mitotic and apoptotic markers in the MDA-MB-468 model than in the less sensitive BT-474 model. In vivo, ispinesib enhanced the anti-tumor activity of trastuzumab, lapatinib, doxorubicin, and capecitabine, and exhibited activity comparable to paclitaxel and ixabepilone. These findings support further clinical exploration of KSP inhibitors for the treatment of breast cancer.

  16. Influence of interstitial Mn on magnetism in room-temperature ferromagnet Mn(1+delta)Sb

    SciTech Connect (OSTI)

    Taylor, Alice E; Berlijn, Tom; Hahn, Steven E; May, Andrew F; Williams, Travis J; Poudel, Lekhanath N; Calder, Stuart A; Fishman, Randy Scott; Stone, Matthew B; Aczel, Adam A; Cao, Huibo; Lumsden, Mark D; Christianson, Andrew D

    2015-01-01

    We report elastic and inelastic neutron scattering measurements of the high-TC ferromagnet Mn(1+delta)Sb. Measurements were performed on a large, TC = 434 K, single crystal with interstitial Mn content of delta=0.13. The neutron diffraction results reveal that the interstitial Mn has a magnetic moment, and that it is aligned antiparallel to the main Mn moment. We perform density functional theory calculations including the interstitial Mn, and find the interstitial to be magnetic in agreement with the diffraction data. The inelastic neutron scattering measurements reveal two features in the magnetic dynamics: i) a spin-wave-like dispersion emanating from ferromagnetic Bragg positions (H K 2n), and ii) a broad, non-dispersive signal centered at forbidden Bragg positions (H K 2n+1). The inelastic spectrum cannot be modeled by simple linear spin-wave theory calculations, and appears to be significantly altered by the presence of the interstitial Mn ions. The results show that the influence of the int

  17. The magnetic structure of EuCu2Sb2

    SciTech Connect (OSTI)

    Ryan, D. H.; Cadogan, J. M.; Anand, V. K.; Johnston, D. C.; Flacau, R.

    2015-05-06

    Antiferromagnetic ordering of EuCu2Sb2 which forms in the tetragonal CaBe2Ge2-type structure (space group P4/nmm #129) has been studied using neutron powder diffraction and 151Eu Mössbauer spectroscopy. The room temperature 151Eu isomer shift of –12.8(1) mm/s shows the Eu to be divalent, while the 151Eu hyperfine magnetic field (Bhf) reaches 28.7(2) T at 2.1 K, indicating a full Eu2+ magnetic moment. Bhf(T) follows a smooth $S=\\frac{7}{2}$ Brillouin function and yields an ordering temperature of 5.1(1) K. Refinement of the neutron diffraction data reveals a collinear A-type antiferromagnetic arrangement with the Eu moments perpendicular to the tetragonal c-axis. As a result, the refined Eu magnetic moment at 0.4 K is 7.08(15) μB which is the full free-ion moment expected for the Eu2+ ion with $S=\\frac{7}{2}$ and a spectroscopic splitting factor of g = 2.

  18. Proton radiation effect on performance of InAs/GaSb complementary barrier infrared detector

    SciTech Connect (OSTI)

    Soibel, Alexander; Rafol, Sir B.; Khoshakhlagh, Arezou; Nguyen, Jean; Hoglund, Linda; Fisher, Anita M.; Keo, Sam. A.; Ting, David Z.-Y.; Gunapala, Sarath D.

    2015-12-28

    In this work, we investigated the effect of proton irradiation on the performance of long wavelength infrared InAs/GaSb photodiodes (λ{sub c} = 10.2 μm), based on the complementary barrier infrared detector design. We found that irradiation with 68 MeV protons causes a significant increase of the dark current from j{sub d} = 5 × 10{sup −5} A/cm{sup 2} to j{sub d} = 6 × 10{sup −3} A/cm{sup 2}, at V{sub b} = 0.1 V, T = 80 K and fluence 19.2 × 10{sup 11 }H{sup +}/cm{sup 2}. Analysis of the dark current as a function of temperature and bias showed that the dominant contributor to the dark current in these devices changes from diffusion current to tunneling current after proton irradiation. This change in the dark current mechanism can be attributed to the onset of surface leakage current, generated by trap-assisted tunneling processes in proton displacement damage areas located near the device sidewalls.

  19. CHARACTERIZATION OF VITRIFIED SAVANNAH RIVER SITE SB4 WASTE SURROGATE PRODUCED IN COLD CRUCIBLE

    SciTech Connect (OSTI)

    Marra, J

    2008-08-05

    Savannah River Site (SRS) sludge batch 4 (SB4) waste surrogate with high aluminum and iron content was vitrified with commercially available Frit 503-R4 (8 wt.% Li{sub 2}O, 16 wt.% B2O3, 76 wt.% SiO{sub 2}) by cold crucible inductive melting using lab- (56 mm inner diameter), bench- (236 mm) and large-scale (418 mm) cold crucible. The waste loading ranged between 40 and 60 wt.%. The vitrified products obtained in the lab-scale cold crucible were nearly amorphous with traces of unreacted quartz in the product with 40 wt.% waste loading and traces of spinel phase in the product with 50 wt.% waste loading. The glassy products obtained in the bench-scale cold crucible are composed of major vitreous and minor iron-rich spinel phase whose content at {approx}60 wt.% waste loading may achieve {approx}10 vol.%. The vitrified waste obtained in the large-scale cold crucible was also composed of major vitreous and minor spinel structure phases. No nepheline phase has been found. Average degree of crystallinity was estimated to be {approx}12 vol.%. Anionic motif of the glass network is built from rather short metasilicate chains and boron-oxygen constituent based on boron-oxygen triangular units.

  20. Thermochemical and kinetic aspects of the sulfurization of Cu-Sb and Cu-Bi thin films

    SciTech Connect (OSTI)

    Colombara, Diego; Peter, Laurence M.; Rogers, Keith D.; Hutchings, Kyle

    2012-02-15

    CuSbS{sub 2} and Cu{sub 3}BiS{sub 3} are being investigated as part of a search for new absorber materials for photovoltaic devices. Thin films of these chalcogenides were produced by conversion of stacked and co-electroplated metal precursor layers in the presence of elemental sulfur vapour. Ex-situ XRD and SEM/EDS analyses of the processed samples were employed to study the reaction sequence with the aim of achieving compact layer morphologies. A new 'Time-Temperature-Reaction' (TTR) diagram and modified Pilling-Bedworth coefficients have been introduced for the description and interpretation of the reaction kinetics. For equal processing times, the minimum temperature required for CuSbS{sub 2} to appear is substantially lower than for Cu{sub 3}BiS{sub 3}, suggesting that interdiffusion across the interfaces between the binary sulfides is a key step in the formation of the ternary compounds. The effects of the heating rate and sulfur partial pressure on the phase evolution as well as the potential losses of Sb and Bi during the processes have been investigated experimentally and the results related to the equilibrium pressure diagrams obtained via thermochemical computation. - Graphical Abstract: Example of 3D plot showing the equilibrium pressure surfaces of species potentially escaping from chalcogenide films as a function of temperature and sulfur partial pressure. Bi{sub (g)}, Bi{sub 2(g)}, and BiS{sub (g)} are the gaseous species in equilibrium with solid Bi{sub 2}S{sub 3(s)} considered in this specific example. The pressure threshold plane corresponds to the pressure limit above which the elemental losses from 1 {mu}m thick films exceeds 10% of the original content per cm{sup 2} area of film and dm{sup 3} capacity of sulfurization furnace under static atmosphere conditions. The sulfurization temperature/sulfur partial pressure boundaries required to minimise the elemental losses below a given value can be easily read from the 2D projection of the

  1. SLUDGE BATCH 5 ACCEPTANCE EVALUATION RADIONUCLIDE CONCENTRATIONS IN TANK 51 SB5 QUALIFICATION SAMPLE PREPARED AT SRNL

    SciTech Connect (OSTI)

    Bannochie, C; Ned Bibler, N; David Diprete, D

    2008-07-28

    Presented in this report are radionuclide concentrations required as part of the program of qualifying Sludge Batch Five (SB5) for processing in the Defense Waste Processing Facility (DWPF). Part of this SB5 material is currently in Tank 51 being washed and prepared for transfer to Tank 40. The acceptance evaluation needs to be completed prior to the transfer of the material in Tank 51 to Tank 40 to complete the formation of SB5. The sludge slurry in Tank 40 has already been qualified for DWPF and is currently being processed as SB4. The radionuclide concentrations were measured or estimated in the Tank 51 SB5 Qualification Sample prepared at Savannah River National Laboratory (SRNL). This sample was prepared from the three liter sample of Tank 51 sludge slurry taken on March 21, 2008. The sample was delivered to SRNL where it was initially characterized in the Shielded Cells. Under direction of the Liquid Waste Organization it was then modified by five washes, six decants, an addition of Pu/Be from Canyon Tank 16.4, and an addition of NaNO2. This final slurry now has a composition expected to be similar to that of the slurry in Tank 51 after final preparations have been made for transfer of that slurry to Ta Determining the radionuclide concentrations in this Tank 51 SB5 Qualification Sample is part of the work requested in Technical Task Request (TTR) No. HLW-DWPF-TTR-2008-0010. The work with this qualification sample is covered by a Task Technical and Quality Assurance Plan and an Analytical Study Plan. The radionuclides included in this report are needed for the DWPF Radiological Program Evaluation, the DWPF Waste Acceptance Criteria (TSR/WAC) Evaluation, and the DWPF Solid Waste Characterization Program (TTR Task 2). Radionuclides required to meet the Waste Acceptance Product Specifications (TTR Task 5) will be measured at a later date after the slurry from Tank 51 has been transferred to Tank 40. Then a sample of the as-processed SB5 will be taken and

  2. SLUDGE BATCH 6 ACCEPTANCE EVALUATION: RADIONUCLIDE CONCENTRATIONS IN TANK 51 SB6 QUALIFICATION SAMPLE PREPARED AT SRNL

    SciTech Connect (OSTI)

    Bannochie, C.; Bibler, N.; Diprete, D.

    2010-05-21

    Presented in this report are radionuclide concentrations required as part of the program of qualifying Sludge Batch Six (SB6) for processing in the Defense Waste Processing Facility (DWPF). The SB6 material is currently in Tank 51 being washed and prepared for transfer to Tank 40. The acceptance evaluation needs to be completed prior to the transfer of the material in Tank 51 to Tank 40. The sludge slurry in Tank 40 has already been qualified for DWPF and is currently being processed as SB5. The radionuclide concentrations were measured or estimated in the Tank 51 SB6 Qualification Sample prepared at Savannah River National Laboratory (SRNL). This sample was prepared from the three liter sample of Tank 51 sludge slurry (HTF-51-09-110) taken on October 8, 2009. The sample was delivered to SRNL where it was initially characterized in the Shielded Cells. Under the direction of the Liquid Waste Organization it was then modified by eight washes, nine decants, an addition of Pu from Canyon Tank 16.3, and an addition of NaNO{sub 2}. This final slurry now has a composition expected to be similar to that of the slurry in Tank 51 after final preparations have been made for transfer of that slurry to Tank 40. Determining the radionuclide concentrations in this Tank 51 SB6 Qualification Sample is part of the work requested in Technical Task Request (TTR) No. HLW-DWPF-TTR-2009-0014. The work with this qualification sample is covered by a Task Technical and Quality Assurance Plan and an Analytical Study Plan. The radionuclides included in this report are needed for the DWPF Radiological Program Evaluation, the DWPF Waste Acceptance Criteria (TSR/WAC) Evaluation, and the DWPF Solid Waste Characterization Program (TTR Task I.2). Radionuclides required to meet the Waste Acceptance Product Specifications (TTR Task II.2.) will be measured at a later date after the slurry from Tank 51 has been transferred to Tank 40. Then a sample of the as-processed SB6 will be taken and transferred

  3. Investigation of single-layer/multilayer self-assembled InAs quantum dots on GaAs{sub 1-x}Sb{sub x}/GaAs composite substrates

    SciTech Connect (OSTI)

    Tang, Dinghao; Kim, Yeongho Faleev, Nikolai; Honsberg, Christiana B.; Smith, David J.

    2015-09-07

    The structure-performance properties of single-layered and multi-layered InAs/GaAs{sub 1−x}Sb{sub x} quantum dot (QD) system, grown by molecular beam epitaxy on GaAs (001) substrates, have been investigated as a function of Sb concentration. Electron microscopy observations showed no significant crystalline defects for the single-layered InAs QDs (Sb 20%). X-ray diffraction analysis revealed that the increase of Sb concentration from 7.3% to 10.2% for the multi-layered QDs increased the strain relaxation from 0% to ∼23% and the dislocation density of GaAsSb layers went up to 3.6 × 10{sup 9 }cm{sup −2}. The peak energy of QD luminescence was red-shifted with increasing Sb concentration due to reduced strain inside QDs. Moreover, the carrier lifetime of the QDs was highly improved from 1.7 to 36.7 ns due to weak hole confinement as the Sb concentration was increased from 7.3% to 10.2%. These structures should be highly promising as the basis for photovoltaic solar-cell applications. Finally, the increased Sb concentration increased the thermal activation energy of electrons confined in the QDs from 163.7 to 206.8 meV, which was indicative of the improved thermal stability with Sb concentration.

  4. From thermoelectric bulk to nanomaterials: Current progress for Bi 2 Te 3 and CoSb 3: From thermoelectric bulk to nanomaterials

    DOE PAGES-Beta [OSTI]

    Peranio, N.; Eibl, O.; Bäßler, S.; Nielsch, K.; Klobes, B.; Hermann, R. P.; Daniel, M.; Albrecht, M.; Görlitz, H.; Pacheco, V.; et al

    2015-10-29

    We synthesized Bi2Te3 and CoSb3 based nanomaterials and their thermoelectric, structural, and vibrational properties analyzed to assess and reduce ZT-limiting mechanisms. The same preparation and/or characterization methods were applied in the different materials systems. Single-crystalline, ternary p-type Bi15Sb29Te56, and n-type Bi38Te55Se7 nanowires with power factors comparable to nanostructured bulkmaterialswere prepared by potential-pulsed electrochemical deposition in a nanostructured Al2O3 matrix. p-type Sb2Te3, n-type Bi2Te3, and n-type CoSb3 thin films were grown at room temperature using molecular beam epitaxy and were subsequently annealed at elevated temperatures. It yielded polycrystalline, single phase thin films with optimized charge carrier densities. In CoSb3 thin filmsmore » the speed of sound could be reduced by filling the cage structure with Yb and alloying with Fe yielded p-type material. Bi2(Te0.91Se0.09)3/SiC and (Bi0.26Sb0.74)2Te3/SiC nanocomposites with low thermal conductivities and ZT values larger than 1 were prepared by spark plasma sintering. Nanostructure, texture, chemical composition, as well as electronic and phononic excitations were investigated by X-ray diffraction, nuclear resonance scattering, inelastic neutron scattering, M ossbauer spectroscopy, and transmission electron microscopy. Furthermore, for Bi2Te3 materials, ab-initio calculations together with equilibrium and non-equilibrium molecular dynamics simulations for point defects yielded their formation energies and their effect on lattice thermal conductivity, respectively. Current advances in thermoelectric Bi2Te3 and CoSb3 based nanomaterials are summarized. Advanced synthesis and characterization methods and theoreticalmodelingwere combined to assess and reduce ZT-limiting mechanisms in these materials.« less

  5. Phase equilibria, formation, crystal and electronic structure of ternary compounds in Ti-Ni-Sn and Ti-Ni-Sb ternary systems

    SciTech Connect (OSTI)

    Romaka, V.V.; Rogl, P.; Romaka, L.; Stadnyk, Yu.; Melnychenko, N.; Grytsiv, A.; Falmbigl, M.; Skryabina, N.

    2013-01-15

    The phase equilibria of the Ti-Ni-Sn and Ti-Ni-Sb ternary systems have been studied in the whole concentration range by means of X-ray and EPM analyses at 1073 K and 873 K, respectively. Four ternary intermetallic compounds TiNiSn (MgAgAs-type), TiNi{sub 2-x}Sn (MnCu{sub 2}Al-type), Ti{sub 2}Ni{sub 2}Sn (U{sub 2}Pt{sub 2}Sn-type), and Ti{sub 5}NiSn{sub 3} (Hf{sub 5}CuSn{sub 3}-type) are formed in Ti-Ni-Sn system at 1073 K. The TiNi{sub 2}Sn stannide is characterized by homogeneity in the range of 50-47 at% of Ni. The Ti-Ni-Sb ternary system at 873 K is characterized by formation of three ternary intermetallic compounds, Ti{sub 0.8}NiSb (MgAgAs-type), Ti{sub 5}Ni{sub 0.45}Sb{sub 2.55} (W{sub 5}Si{sub 3}-type), and Ti{sub 5}NiSb{sub 3} (Hf{sub 5}CuSn{sub 3}-type). The solubility of Ni in Ti{sub 0.8}NiSb decreases number of vacancies in Ti site up to Ti{sub 0.91}Ni{sub 1.1}Sb composition. - Graphical abstract: Isothermal section of the Ti-Ni-Sn phase diagram and DOS distribution in hypothetical TiNi{sub 1+x}Sn solid solution. Highlights: Black-Right-Pointing-Pointer Ti-Ni-Sn phase diagram was constructed at 1073 K. Black-Right-Pointing-Pointer Four ternary compounds are formed: TiNiSn, TiNi{sub 2-x}Sn, Ti{sub 2}Ni{sub 2}Sn, and Ti{sub 5}NiSn{sub 3}. Black-Right-Pointing-Pointer Three ternary compounds exist in Ti-Ni-Sb system at 873 K. Black-Right-Pointing-Pointer The TiNi{sub 2}Sb compound is absent.

  6. High quality HfO{sub 2}/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8?nm equivalent oxide thickness

    SciTech Connect (OSTI)

    Barth, Michael; Datta, Suman; Bruce Rayner, G.; McDonnell, Stephen; Wallace, Robert M.; Bennett, Brian R.; Engel-Herbert, Roman

    2014-12-01

    We investigate in-situ cleaning of GaSb surfaces and its effect on the electrical performance of p-type GaSb metal-oxide-semiconductor capacitor (MOSCAP) using a remote hydrogen plasma. Ultrathin HfO{sub 2} films grown by atomic layer deposition were used as a high permittivity gate dielectric. Compared to conventional ex-situ chemical cleaning methods, the in-situ GaSb surface treatment resulted in a drastic improvement in the impedance characteristics of the MOSCAPs, directly evidencing a much lower interface trap density and enhanced Fermi level movement efficiency. We demonstrate that by using a combination of ex-situ and in-situ surface cleaning steps, aggressively scaled HfO{sub 2}/p-GaSb MOSCAP structures with a low equivalent oxide thickness of 0.8?nm and efficient gate modulation of the surface potential are achieved, allowing to push the Fermi level far away from the valence band edge high up into the band gap of GaSb.

  7. Femtosecond laser-induced crystallization of amorphous Sb{sub 2}Te{sub 3} film and coherent phonon spectroscopy characterization and optical injection of electron spins

    SciTech Connect (OSTI)

    Li Simian; Huang Huan; Wang Yang; Wu Yiqun; Gan Fuxi; Zhu Weiling; Wang Wenfang; Chen Ke; Yao Daoxin; Lai Tianshu

    2011-09-01

    A femtosecond laser-irradiated crystallizing technique is tried to convert amorphous Sb{sub 2}Te{sub 3} film into crystalline film. Sensitive coherent phonon spectroscopy (CPS) is used to monitor the crystallization of amorphous Sb{sub 2}Te{sub 3} film at the original irradiation site. The CPS reveals that the vibration strength of two phonon modes that correspond to the characteristic phonon modes (A{sub 1g}{sup 1} and E{sub g}) of crystalline Sb{sub 2}Te{sub 3} enhances with increasing laser irradiation fluence (LIF), showing the rise of the degree of crystallization with LIF and that femtosecond laser irradiation is a good post-treatment technique. Time-resolved circularly polarized pump-probe spectroscopy is used to investigate electron spin relaxation dynamics of the laser-induced crystallized Sb{sub 2}Te{sub 3} film. Spin relaxation process indeed is observed, confirming the theoretical predictions on the validity of spin-dependent optical transition selection rule and the feasibility of transient spin-grating-based optical detection scheme of spin-plasmon collective modes in Sb{sub 2}Te{sub 3}-like topological insulators.

  8. Structural properties and band offset determination of p-channel mixed As/Sb type-II staggered gap tunnel field-effect transistor structure

    SciTech Connect (OSTI)

    Zhu, Y.; Jain, N.; Hudait, M. K.; Mohata, D. K.; Datta, S.; Lubyshev, D.; Fastenau, J. M.; Liu, A. K.

    2012-09-10

    The structural properties and band offset determination of p-channel staggered gap In{sub 0.7}Ga{sub 0.3}As/GaAs{sub 0.35}Sb{sub 0.65} heterostructure tunnel field-effect transistor (TFET) grown by molecular beam epitaxy (MBE) were investigated. High resolution x-ray diffraction revealed that the active layers are strained with respect to 'virtual substrate.' Dynamic secondary ion mass spectrometry confirmed an abrupt junction profile at the In{sub 0.7}Ga{sub 0.3}As/GaAs{sub 0.35}Sb{sub 0.65} heterointerface and minimal level of intermixing between As and Sb atoms. The valence band offset of 0.37 {+-} 0.05 eV was extracted from x-ray photoelectron spectroscopy. A staggered band lineup was confirmed at the heterointerface with an effective tunneling barrier height of 0.13 eV. Thus, MBE-grown staggered gap In{sub 0.7}Ga{sub 0.3}As/GaAs{sub 0.35}Sb{sub 0.65} TFET structures are a promising p-channel option to provide critical guidance for the future design of mixed As/Sb type-II based complementary logic and low power devices.

  9. Ab initio density functional theory investigation of the structural, electronic and optical properties of Ca{sub 3}Sb{sub 2} in hexagonal and cubic phases

    SciTech Connect (OSTI)

    Arghavani Nia, Borhan; Sedighi, Matin; Shahrokhi, Masoud; Moradian, Rostam

    2013-11-15

    A density functional theory study of structural, electronical and optical properties of Ca{sub 3}Sb{sub 2} compound in hexagonal and cubic phases is presented. In the exchangecorrelation potential, generalized gradient approximation (PBE-GGA) has been used to calculate lattice parameters, bulk modulus, cohesive energy, dielectric function and energy loss spectra. The electronic band structure of this compound has been calculated using the above two approximations as well as another form of PBE-GGA, proposed by Engle and Vosko (EV-GGA). It is found that the hexagonal phase of Ca{sub 3}Sb{sub 2} has an indirect gap in the ??N direction; while in the cubic phase there is a direct-gap at the ? point in the PBE-GGA and EV-GGA. Effects of applying pressure on the band structure of the system studied and optical properties of these systems were calculated. - Graphical abstract: A density functional theory study of structural, electronic and optical properties of Ca{sub 3}Sb{sub 2} compound in hexagonal and cubic phases is presented. Display Omitted - Highlights: Physical properties of Ca{sub 3}Sb{sub 2} in hexagonal and cubic phases are investigated. It is found that the hexagonal phase is an indirect gap semiconductor. Ca{sub 3}Sb{sub 2} is a direct-gap semiconductor at the ? point in the cubic phase. By increasing pressure the semiconducting band gap and anti-symmetry gap are decreased.

  10. Structural, electronic and optical properties of La{sub x}Sc{sub 1-x}Sb alloys

    SciTech Connect (OSTI)

    Ghezali, M.

    2015-03-30

    We present calculations of the structural, electronic and optic properties of LaxSc1-xSb ternary alloys for 0≤x≤1, by using the first principle full potential linear muffin-tin orbital (FPLMTO) method based on the local density approximation (LDA). the lattice constant, bulk modulus, electronic band structures, density of state and optical properties such as dielectric functions, refractive index and extinction coefficient are calculated and discussed for (x=0.25, 0.5 and 0.75). Our results agree well with the available data in the literature.

  11. Cyclotron resonance in InAs/AlSb quantum wells in magnetic fields up to 45 T

    SciTech Connect (OSTI)

    Spirin, K. E. Krishtopenko, S. S.; Sadofyev, Yu. G.; Drachenko, O.; Helm, M.; Teppe, F.; Knap, W.; Gavrilenko, V. I.

    2015-12-15

    Electron cyclotron resonance in InAs/AlSb heterostructures with quantum wells of various widths in pulsed magnetic fields up to 45 T are investigated. Our experimental cyclotron energies are in satisfactory agreement with the results of theoretical calculations performed using the eight-band kp Hamiltonian. The shift of the cyclotron resonance (CR) line, which corresponds to the transition from the lowest Landau level to the low magnetic-field region, is found upon varying the electron concentration due to the negative persistent photoconductivity effect. It is shown that the observed shift of the CR lines is associated with the finite width of the density of states at the Landau levels.

  12. Excitonic transitions in highly efficient (GaIn)As/Ga(AsSb) type-II quantum-well structures

    SciTech Connect (OSTI)

    Gies, S.; Kruska, C.; Berger, C.; Hens, P.; Fuchs, C.; Rosemann, N. W.; Veletas, J.; Stolz, W.; Koch, S. W.; Heimbrodt, W.; Ruiz Perez, A.; Hader, J.; Moloney, J. V.

    2015-11-02

    The excitonic transitions of the type-II (GaIn)As/Ga(AsSb) gain medium of a “W”-laser structure are characterized experimentally by modulation spectroscopy and analyzed using microscopic quantum theory. On the basis of the very good agreement between the measured and calculated photoreflectivity, the type-I or type-II character of the observable excitonic transitions is identified. Whereas the energetically lowest three transitions exhibit type-II character, the subsequent energetically higher transitions possess type-I character with much stronger dipole moments. Despite the type-II character, the quantum-well structure exhibits a bright luminescence.

  13. Calculation of the electron spin relaxation times in InSb and InAs by the projection-reduction method

    SciTech Connect (OSTI)

    Kang, Nam Lyong

    2014-12-07

    The electron spin relaxation times in a system of electrons interacting with piezoelectric phonons mediated through spin-orbit interactions were calculated using the formula derived from the projection-reduction method. The results showed that the temperature and magnetic field dependence of the relaxation times in InSb and InAs were similar. The piezoelectric material constants obtained by a comparison with the reported experimental result were P{sub pe}=4.0×10{sup 22} eV/m for InSb and P{sub pe}=1.2×10{sup 23} eV/m for InAs. The result also showed that the relaxation of the electron spin by the Elliot-Yafet process is more relevant for InSb than InAs at a low density.

  14. Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence

    SciTech Connect (OSTI)

    Ji, Hai-Ming; Liang, Baolai Simmonds, Paul J.; Juang, Bor-Chau; Yang, Tao; Young, Robert J.; Huffaker, Diana L.

    2015-03-09

    We investigate the photoluminescence (PL) properties of a hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot (QD) structure grown in a GaAs matrix by molecular beam epitaxy. This hybrid QD structure exhibits more intense PL with a broader spectral range, compared with control samples that contain only InAs or GaSb QDs. This enhanced PL performance is attributed to additional electron and hole injection from the type-I InAs QDs into the adjacent type-II GaSb QDs. We confirm this mechanism using time-resolved and power-dependent PL. These hybrid QD structures show potential for high efficiency QD solar cell applications.

  15. Growth and transport properties of epitaxial lattice matched half Heusler CoTiSb/InAlAs/InP(001) heterostructures

    SciTech Connect (OSTI)

    Kawasaki, Jason K.; Johansson, Linda I. M.; Schultz, Brian D.; Palmstrm, Chris J.

    2014-01-13

    We demonstrate the integration of the lattice matched single crystal epitaxial Half Heusler compound CoTiSb with In{sub 0.52}Al{sub 0.48}As/InP(001) heterostructures using molecular beam epitaxy. CoTiSb belongs to the subset of Half Heusler compounds that is expected to be semiconducting, despite being composed entirely of metallic constituents. The lattice matching and epitaxial alignment of the CoTiSb films were confirmed by reflection high energy electron diffraction and X-ray diffraction. Temperature dependent transport measurements indicate semiconducting-like behavior, with a room temperature Hall mobility of 530 cm{sup 2}/Vs and background Hall carrier density of 9.0??10{sup 17}?cm{sup ?3}, which is comparable to n-Si with similar carrier density. Below 100?K, the films show a large negative magnetoresistance, and possible origins of this negative magnetoresistance are discussed.

  16. Influence of Sn on the thermoelectric properties of (Bi{sub x}Sb{sub 1-x}){sub 2}Te{sub 3} single crystals

    SciTech Connect (OSTI)

    Kulbachinskii, V.A.; Kytin, V.G.; Kudryashov, A.A.; Lunin, R.A.

    2012-09-15

    The influence of tin on the thermoelectric properties of p-(Bi{sub x}Sb{sub 1-x}){sub 2}Te{sub 3} single crystals (x=0; 0.25; 0.5) has been investigated. The temperature dependence of the Seebeck coefficient S, the electrical conductivity {sigma}, the heat conductivity k and the thermoelectric figure of merit of p-(Bi{sub x}Sb{sub 1-x}){sub 2}Te{sub 3} single crystals were measured in the temperature range 7-300 K. By an increase the Sn content, the hole concentration increases in p-(Bi{sub x}Sb{sub 1-x}){sub 2-y}Sn{sub y}Te{sub 3}. The heat conductivity k of the p-(Bi{sub x}Sb{sub 1-x}){sub 2-y}Sn{sub y}Te{sub 3} crystals decreases due to the Sn doping, while the electrical conductivity {sigma} increases in the temperature interval about 200Sb{sub 1-x}){sub 2}Te{sub 3} single crystals (x=0; 0.25; 0.5) has been investigated. Temperature dependence of Seebeck coefficient S, electrical conductivity {sigma}, thermal conductivity k and figure of merit of p-(Bi{sub x}Sb{sub 1-x}){sub 2}Te{sub 3} single crystals were measured in the temperature range 7-300 K. Electrical conductivity increases in the temperature interval 150KSb{sub 1-x}){sub 2}Te{sub 3} as shown in figure. By increasing the Sn content, the hole concentration increases in p-(Bi{sub x}Sb{sub 1-x}){sub 2-y}Sn{sub y}Te{sub 3}. The thermal conductivity k of the p-(Bi{sub x}Sb{sub 1-x}){sub 2-y}Sn{sub y}Te{sub 3} crystals decreases due to Sn doping. The Seebeck coefficient S for all compositions is positive and decreases due

  17. Anisotropic magnetization and transport properties of RAgSb{sub 2} (R=Y, La-Nd, Sm, Gd-Tm)

    SciTech Connect (OSTI)

    Myers, Kenneth D.

    1999-11-08

    This study of the RAgSb{sub 2} series of compounds arose as part of an investigation of rare earth intermetallic compounds containing antimony with the rare earth in a position with tetragonal point symmetry. Materials with the rare earth in a position with tetragonal point symmetry frequently manifest strong anisotropies and rich complexity in the magnetic properties, and yet are simple enough to analyze. Antimony containing intermetallic compounds commonly possess low carrier densities and have only recently been the subject of study. Large single grain crystals were grown of the RAgSb{sub 2} (R=Y, La-Nd, Sm, Gd-Tm) series of compounds out of a high temperature solution. This method of crystal growth, commonly known as flux growth is a versatile method which takes advantage of the decreasing solubility of the target compound with decreasing temperature. Overall, the results of the crystal growth were impressive with the synthesis of single crystals of LaAgSb{sub 2} approaching one gram. However, the sample yield diminishes as the rare earth elements become smaller and heavier. Consequently, no crystals could be grown with R=Yb or Lu. Furthermore, EuAgSb{sub 2} could not be synthesized, likely due to the divalency of the Eu ion. For most of the RAgSb{sub 2} compounds, strong magnetic anisotropies are created by the crystal electric field splitting of the Hund's rule ground state. This splitting confines the local moments to lie in the basal plane (easy plane) for the majority of the members of the series. Exceptions to this include ErAgSb{sub 2} and TmAgSb{sub 2}, which have moments along the c-axis (easy axis) and CeAgSb{sub 2}, which at intermediate temperatures has an easy plane, but exchange coupling at low temperatures is anisotropic with an easy axis. Additional anisotropy is also observed within the basal plane of DyAgSb{sub 2}, where the moments are restricted to align along one of the {l_angle}110{r_angle} axes. Most of the RAgSb{sub 2} compounds

  18. Effect of ultrasound on the growth striation and electrical properties of Ga{sub 0.03}In{sub 0.97}Sb single crystals

    SciTech Connect (OSTI)

    Kozhemyakin, G. N. Zolkina, L. V.; Rom, M. A.

    2008-12-15

    The growth striation of impurity segregation and electrical properties of Ga{sub 0.03}In{sub 0.97}Sb single crystals grown by the Czochralski method in an ultrasonic field have been investigated. It is established that ultrasonic irradiation of the melt during growth significantly decreases the growth striation (in particular, it eliminates striations spaced at a distance of more than 14 {mu}m). The Ga{sub 0.03}In{sub 0.97}Sb single crystals grown in an ultrasonic field had a higher charge-carrier mobility and thermoelectric power in comparison with the single crystals grown without ultrasound.

  19. Frit Development Efforts for Sludge Batch 4 (SB4): Model-Based Assessments

    SciTech Connect (OSTI)

    Peeler, D. K.; Edwards, T. B.

    2005-03-05

    The model-based assessments of nominal Sludge Batch 4 (SB4) compositions suggest that a viable frit candidate does not appear to be a limiting factor as the Closure Business Unit (CBU) considers various tank blending options and/or washing strategies. This statement is based solely on the projected operating windows derived from model predictions and does not include assessments of SO{sub 4} solubility or melt rate issues. The viable frit candidates covered a range of Na{sub 2}O concentrations (from 8% to 13%--including Frit 418 and Frit 320) using a ''sliding Na{sub 2}O scale'' concept (i.e., 1% increase in Na{sub 2}O being balanced by a 1% reduction in SiO{sub 2}) which effectively balances the alkali content of the incoming sludge with that in the frit to maintain and/or increase the projected operating window size while potentially leading to improved melt rate and/or waste loadings. This strategy or approach allows alternative tank blending strategies and/or different washing scenarios to be considered and accounted for in an effective manner without wholesale changes to the frit composition. In terms of projected operating windows, in general, the sludge/frit systems evaluated resulted in waste loading intervals from 25 to the mid-40%'s or even the mid-50%'s. The results suggest that a single frit could be selected for use with all 20 options which indicates some degree of frit robustness with respect to sludge compositional variation. In fact, use of Frit 418 or Frit 320 (the ''cornerstone'' frits given previous processing experience in the Defense Waste Processing Facility (DWPF)) are plausible for most (if not all) options being considered. However, the frit selection process also needs to consider potential processing issues such as melt rate. Based on historical trends between melt rate and total alkali content, one may elect to use the frit with the highest alkali content that still yields an acceptable operating window. However, other constraints may

  20. Electron-phonon coupling and thermal transport in the thermoelectric compound Mo3Sb7–xTex

    DOE PAGES-Beta [OSTI]

    Bansal, Dipanshu; Li, Chen W.; Said, Ayman H.; Abernathy, Douglas L.; Yan, Jiaqiang; Delaire, Olivier A.

    2015-12-07

    Phonon properties of Mo3Sb7–xTex (x = 0, 1.5, 1.7), a potential high-temperature thermoelectric material, have been studied with inelastic neutron and x-ray scattering, and with first-principles simulations. The substitution of Te for Sb leads to pronounced changes in the electronic struc- ture, local bonding, phonon density of states (DOS), dispersions, and phonon lifetimes. Alloying with tellurium shifts the Fermi level upward, near the top of the valence band, resulting in a strong suppression of electron-phonon screening, and a large overall stiffening of interatomic force- constants. The suppression in electron-phonon coupling concomitantly increases group velocities and suppresses phonon scattering rates, surpassingmore » the effects of alloy-disorder scattering, and re- sulting in a surprising increased lattice thermal conductivity in the alloy. We also identify that the local bonding environment changes non-uniformly around different atoms, leading to variable perturbation strengths for different optical phonon branches. The respective roles of changes in phonon group velocities and phonon lifetimes on the lattice thermal conductivity are quantified. Lastly, our results highlight the importance of the electron-phonon coupling on phonon mean-free-paths in this compound, and also estimates the contributions from boundary scattering, umklapp scattering, and point-defect scattering.« less

  1. Anomalous temperature-dependent Young's modulus of a cast LAST (Pb-Sb-Ag-Te) thermoelectric material

    SciTech Connect (OSTI)

    Ren, Fei; Case, Eldon D; Timm, Edward J; Lara-Curzio, Edgar; Trejo, Rosa M

    2010-01-01

    Thermomechanical characterization is important to material evaluation and device design in the development of thermoelectric technology. In this study, we utilize the resonant ultrasound spectroscopy (RUS) technique to examine the elastic behavior of a cast LAST (Pb Sb Ag Te) material with a composition of Ag0.86Pb19Sb1.0Te20 between room temperature and 823 K. The temperature-dependent Young s modulus exhibits a monotonically decreasing trend with increasing temperature. However, an abnormal slope change in the Young s modulus temperature curve around 500 K is observed. In addition, hysteresis between heating and cooling data in the temperature range of 450 550 K is observed, which appears to be dependent on the heating/cooling rate during the RUS experiments such that the hysteresis disappears when the heating/cooling rate was decreased from 5 to 2 K min 1. In this study we propose an order disorder transition model for the anomalous temperature-dependent Young s modulus behavior observed in this study.

  2. Limits of carrier mobility in Sb-doped SnO{sub 2} conducting films deposited by reactive sputtering

    SciTech Connect (OSTI)

    Bissig, B. Jäger, T.; Tiwari, A. N.; Romanyuk, Y. E.; Ding, L.

    2015-06-01

    Electron transport in Sb-doped SnO{sub 2} (ATO) films is studied to unveil the limited carrier mobility observed in sputtered films as compared to other deposition methods. Transparent and conductive ATO layers are deposited from metallic tin targets alloyed with antimony in oxygen atmosphere optimized for reactive sputtering. The carrier mobility decreases from 24 cm{sup 2} V{sup −1} s{sup −1} to 6 cm{sup 2} V{sup −1} s{sup −1} when increasing the doping level from 0 to 7 at. %, and the lowest resistivity of 1.8 × 10{sup −3} Ω cm corresponding to the mobility of 12 cm{sup 2} V{sup −1} s{sup −1} which is obtained for the 3 at. % Sb-doped ATO. Temperature-dependent Hall effect measurements and near-infrared reflectance measurements reveal that the carrier mobility in sputtered ATO is limited by ingrain scattering. In contrast, the mobility of unintentionally doped SnO{sub 2} films is determined mostly by the grain boundary scattering. Both limitations should arise from the sputtering process itself, which suffers from the high-energy-ion bombardment and yields polycrystalline films with small grain size.

  3. Magneto-transport and thermoelectric properties of epitaxial FeSb{sub 2} thin film on MgO substrate

    SciTech Connect (OSTI)

    Duong, Anh Tuan; Rhim, S. H. Shin, Yooleemi; Nguyen, Van Quang; Cho, Sunglae

    2015-01-19

    We report magneto-transport and thermoelectric properties of FeSb{sub 2} thin film epitaxially grown on the MgO substrate using molecular beam epitaxy. The film exhibits compressive strain of 1.74% owing to large lattice mismatch, whose physical consequences are nontrivial. Magnetic phase has been changed from diamagnetic in bulk, as evidenced by anomalous Hall effect (AHE) and negative magneto-resistance (MR). The FeSb{sub 2} film is semiconducting without any metallic transition unlike the bulk counterpart. In particular, hysteresis in MR with distinct feature of AHE is evident with coercive field of 500 and 110 Oe for T = 20 and 50 K, respectively. Furthermore, from the Seebeck coefficients and temperature dependence of the resistivity, it is evident that the film is semiconducting with small band gap: 3.76 meV for T < 40 K and 13.48 meV for T > 40 K, respectively, where maximum thermoelectric power factor of 12 μV/cm·K at T = 50 K.

  4. Ground-state wave function of plutonium in PuSb as determined via x-ray magnetic circular dichroism

    SciTech Connect (OSTI)

    Janoschek, M.; Haskel, D.; Fernandez-Rodriguez, J.; van Veenendaal, M.; Rebizant, J.; Lander, G. H.; Zhu, J. -X.; Thompson, J. D.; Bauer, E. D.

    2015-01-01

    Measurements of x-ray magnetic circular dichroism (XMCD) and x-ray absorption near-edge structure (XANES) spectroscopy at the Pu M?,? edges of the ferromagnet PuSb are reported. Using bulk magnetization measurements and a sum rule analysis of the XMCD spectra, we determine the individual orbital [?L = 2.8(1)?B/Pu] and spin moments [?S = ?2.0(1)?B/Pu] of the Pu 5f electrons for the first time. Atomic multiplet calculations of the XMCD and XANES spectra reproduce well the experimental data and are consistent with the experimental value of the spin moment. These measurements of ?Lz? and ?Sz? are in excellent agreement with the values that have been extracted from neutron magnetic form factor measurements, and confirm the local character of the 5f electrons in PuSb. Finally, we demonstrate that a split M? as well as a narrow M? XMCD signal may serve as a signature of 5f electron localization in actinide compounds.

  5. Ground-state wave function of plutonium in PuSb as determined via x-ray magnetic circular dichroism

    DOE PAGES-Beta [OSTI]

    Janoschek, M.; Haskel, D.; Fernandez-Rodriguez, J.; van Veenendaal, M.; Rebizant, J.; Lander, G. H.; Zhu, J. -X.; Thompson, J. D.; Bauer, E. D.

    2015-01-14

    Measurements of x-ray magnetic circular dichroism (XMCD) and x-ray absorption near-edge structure (XANES) spectroscopy at the Pu M₄,₅ edges of the ferromagnet PuSb are reported. Using bulk magnetization measurements and a sum rule analysis of the XMCD spectra, we determine the individual orbital [μL = 2.8(1)μB/Pu] and spin moments [μS = –2.0(1)μB/Pu] of the Pu 5f electrons for the first time. Atomic multiplet calculations of the XMCD and XANES spectra reproduce well the experimental data and are consistent with the experimental value of the spin moment. These measurements of Lz and Sz are in excellent agreement with the values thatmore » have been extracted from neutron magnetic form factor measurements, and confirm the local character of the 5f electrons in PuSb. We demonstrate that a split M₅ as well as a narrow M₄ XMCD signal may serve as a signature of 5f electron localization in actinide compounds.« less

  6. CaMn2Sb2: Spin waves on a frustrated antiferromagnetic honeycomb lattice

    SciTech Connect (OSTI)

    McNally, D. E.; Simonson, J. W.; Kistner-Morris, J. J.; Smith, G. J.; Hassinger, J. E.; DeBeer-Schmidt, L.; Kolesnikov, A. I.; Zaliznyak, I.; Aronson, M. C.

    2015-05-22

    We present inelastic neutron scattering measurements of the antiferromagnetic insulator CaMn2Sb2:, which consists of corrugated honeycomb layers of Mn. The dispersion of magnetic excitations has been measured along the H and L directions in reciprocal space, with a maximum excitation energy of ≈ 24 meV. These excitations are well described by spin waves in a Heisenberg model, including first and second neighbor exchange interactions, J1 and J2, in the Mn plane and also an exchange interaction between planes. The determined ratio J2/J1 ≈ 1/6 suggests that CaMn2Sb2: is the first example of a compound that lies very close to the mean field tricritical point, known for the classical Heisenberg model on the honeycomb lattice, where the N´eel phase and two different spiral phases coexist. The magnitude of the determined exchange interactions reveal a mean field ordering temperature ≈ 4 times larger than the reported N´eel temperature TN = 85 K, suggesting significant frustration arising from proximity to the tricritical point.

  7. GaAsSb/GaAsN short-period superlattices as a capping layer for improved InAs quantum dot-based optoelectronics

    SciTech Connect (OSTI)

    Utrilla, A. D.; Ulloa, J. M. Guzman, A.; Hierro, A.

    2014-07-28

    The application of a GaAsSb/GaAsN short-period superlattice capping layer (CL) on InAs/GaAs quantum dots (QDs) is shown to be an option for providing improved luminescence properties to this system. Separating both GaAsSb and GaAsN ternaries during the growth in 2 monolayer-thick phases solves the GaAsSbN immiscibility-related problems. Strong fluctuations in the CL composition and strain field as well as in the QD size distribution are significantly reduced, and a more regular CL interface is also obtained. Room-temperature (RT) photoluminescence (PL) is obtained for overall N contents as high as 3%, yielding PL peak wavelengths beyond 1.4 μm in samples with a type-II band alignment. High external quantum efficiency electroluminescence and photocurrent from the QD ground state are also demonstrated at RT in a single QD-layer p-i-n device. Thus, it becomes possible to combine and transfer the complementary benefits of Sb- and N-containing GaAs alloys to InAs QD-based optoelectronics.

  8. Enhanced thermoelectric performance driven by high-temperature phase transition in the phase change material Ge4SbTe5

    DOE PAGES-Beta [OSTI]

    Williams, Jared B.; Lara-Curzio, Edgar; Cakmak, Ercan; Watkins, Thomas R.; Morelli, Donald T.

    2015-05-15

    Phase change materials are identified for their ability to rapidly alternate between amorphous and crystalline phases and have large contrast in the optical/electrical properties of the respective phases. The materials are primarily used in memory storage applications, but recently they have also been identified as potential thermoelectric materials. Many of the phase change materials researched today can be found on the pseudo-binary (GeTe)1-x(Sb2Te3)x tie-line. While many compounds on this tie-line have been recognized as thermoelectric materials, here we focus on Ge4SbTe5, a single phase compound just off of the (GeTe)1-x(Sb2Te3)x tie-line, that forms in a stable rocksalt crystal structure atmore » room temperature. We find that stoichiometric and undoped Ge4SbTe5 exhibits a thermal conductivity of ~1.2 W/m-K at high temperature and a large Seebeck coefficient of ~250 μV/K. The resistivity decreases dramatically at 623 K due to a structural phase transition which lends to a large enhancement in both thermoelectric power factor and thermoelectric figure of merit at 823 K. In a more general sense the research presents evidence that phase change materials can potentially provide a new route to highly efficient thermoelectric materials for power generation at high temperature.« less

  9. Confirmatory Survey Report for Area B1S/B2S at the Chevron Mining Washington Remediation Project, Washington, PA

    SciTech Connect (OSTI)

    W. C. Adams

    2007-11-20

    During the period of October 2 and 3, 2007, the Oak Ridge Institute for Science and Education (ORISE) performed confirmatory radiological survey activities which included gamma surface scans within Area B1S/B2S and the collection of soil samples from these areas.

  10. Self-catalyzed growth of dilute nitride GaAs/GaAsSbN/GaAs core-shell nanowires by molecular beam epitaxy

    SciTech Connect (OSTI)

    Kasanaboina, Pavan Kumar; Ahmad, Estiak; Li, Jia; Iyer, Shanthi; Reynolds, C. Lewis; Liu, Yang

    2015-09-07

    Bandgap tuning up to 1.3 μm in GaAsSb based nanowires by incorporation of dilute amount of N is reported. Highly vertical GaAs/GaAsSbN/GaAs core-shell configured nanowires were grown for different N contents on Si (111) substrates using plasma assisted molecular beam epitaxy. X-ray diffraction analysis revealed close lattice matching of GaAsSbN with GaAs. Micro-photoluminescence (μ-PL) revealed red shift as well as broadening of the spectra attesting to N incorporation in the nanowires. Replication of the 4K PL spectra for several different single nanowires compared to the corresponding nanowire array suggests good compositional homogeneity amongst the nanowires. A large red shift of the Raman spectrum and associated symmetric line shape in these nanowires have been attributed to phonon localization at point defects. Transmission electron microscopy reveals the dominance of stacking faults and twins in these nanowires. The lower strain present in these dilute nitride nanowires, as opposed to GaAsSb nanowires having the same PL emission wavelength, and the observation of room temperature PL demonstrate the advantage of the dilute nitride system offers in the nanowire configuration, providing a pathway for realizing nanoscale optoelectronic devices in the telecommunication wavelength region.

  11. Analytical electron microscopy investigation of elemental composition and bonding structure at the Sb-doped Ni-fully-silicide/SiO{sub 2} interface

    SciTech Connect (OSTI)

    Kawasaki, Naohiko; Sugiyama, Naoyuki; Otsuka, Yuji; Hashimoto, Hideki; Kurata, Hiroki; Isoda, Seiji

    2011-03-15

    It is very important to control the elemental composition and bonding structure at the gate electrode/gate dielectrics interface in metal-oxide-semiconductor transistor devices because this determines the threshold voltage of the gate electrode. In this study, we investigated the structure at the interface between the antimony (Sb)-doped nickel-fully-silicide gate electrode and SiO{sub 2} dielectrics by employing high-spatial resolution techniques such as energy dispersive x-ray spectroscopy and electron energy-loss spectroscopy using a scanning transmission electron microscope. In one region, we found a thin nickel layer at the NiSi/SiO{sub 2} interface originating from the migration of native oxide at the face of the poly-silicon. In another region, a Sb pileup was detected at the NiSi/SiO{sub 2} interface where the Ni L{sub 3}-edge spectrum showed Ni-Sb bonding, then it was suggested that Sb atoms exist at the bottom of NiSi, substituting for Si atoms in NiSi.

  12. Band offset determination of mixed As/Sb type-II staggered gap heterostructure for n-channel tunnel field effect transistor application

    SciTech Connect (OSTI)

    Zhu, Y.; Jain, N.; Hudait, M. K.; Mohata, D. K.; Datta, S.; Lubyshev, D.; Fastenau, J. M.; Liu, A. K.

    2013-01-14

    The experimental study of the valence band offset ({Delta}E{sub v}) of a mixed As/Sb type-II staggered gap GaAs{sub 0.35}Sb{sub 0.65}/In{sub 0.7}Ga{sub 0.3}As heterostructure used as source/channel junction of n-channel tunnel field effect transistor (TFET) grown by molecular beam epitaxy was investigated by x-ray photoelectron spectroscopy (XPS). Cross-sectional transmission electron micrograph shows high crystalline quality at the source/channel heterointerface. XPS results demonstrate a {Delta}E{sub v} of 0.39 {+-} 0.05 eV at the GaAs{sub 0.35}Sb{sub 0.65}/In{sub 0.7}Ga{sub 0.3}As heterointerface. The conduction band offset was calculated to be {approx}0.49 eV using the band gap values of source and channel materials and the measured valence band offset. An effective tunneling barrier height of 0.21 eV was extracted, suggesting a great promise for designing a metamorphic mixed As/Sb type-II staggered gap TFET device structure for low-power logic applications.

  13. High-Temperature Thermoelectric Properties of the Solid–Solution Zintl Phase Eu11Cd6Sb12–xAsx (x < 3)

    SciTech Connect (OSTI)

    Kazem, Nasrin; Xie, Weiwei; Ohno, Saneyuki; Zevalkink, Alexandra; Miller, Gordon J; Snyder, G Jeffrey; Kauzlarich, Susan M

    2014-02-11

    Zintl phases are compounds that have shown promise for thermoelectric applications. The title solid–solution Zintl compounds were prepared from the elements as single crystals using a tin flux for compositions x = 0, 1, 2, and 3. Eu11Cd6Sb12–xAsx (x < 3) crystallize isostructurally in the centrosymmetric monoclinic space group C2/m (no. 12, Z = 2) as the Sr11Cd6Sb12 structure type (Pearson symbol mC58). Efforts to make the As compositions for x exceeding ~3 resulted in structures other than the Sr11Cd6Sb12 structure type. Single-crystal X-ray diffraction indicates that As does not randomly substitute for Sb in the structure but is site specific for each composition. The amount of As determined by structural refinement was verified by electron microprobe analysis. Electronic structures and energies calculated for various model structures of Eu11Cd6Sb10As2 (x = 2) indicated that the preferred As substitution pattern involves a mixture of three of the six pnicogen sites in the asymmetric unit. In addition, As substitution at the Pn4 site opens an energy gap at the Fermi level, whereas substitution at the other five pnicogen sites remains semimetallic with a pseudo gap. Thermoelectric properties of these compounds were measured on hot-pressed, fully densified pellets. Samples show exceptionally low lattice thermal conductivities from room temperature to 775 K: 0.78–0.49 W/mK for x = 0; 0.72–0.53 W/mK for x = 1; and 0.70–0.56 W/mK for x = 2. Eu11Cd6Sb12 shows a high p-type Seebeck coefficient (from +118 to 153 μ V/K) but also high electrical resistivity (6.8 to 12.8 mΩ·cm). The value of zT reaches 0.23 at 774 K. The properties of Eu11Cd6Sb12–xAsx are interpreted in discussion with the As site substitution.

  14. From thermoelectric bulk to nanomaterials: Current progress for Bi 2 Te 3 and CoSb 3: From thermoelectric bulk to nanomaterials

    SciTech Connect (OSTI)

    Peranio, N.; Eibl, O.; Bäßler, S.; Nielsch, K.; Klobes, B.; Hermann, R. P.; Daniel, M.; Albrecht, M.; Görlitz, H.; Pacheco, V.; Bedoya-Martínez, N.; Hashibon, A.; Elsässer, C.

    2015-10-29

    We synthesized Bi2Te3 and CoSb3 based nanomaterials and their thermoelectric, structural, and vibrational properties analyzed to assess and reduce ZT-limiting mechanisms. The same preparation and/or characterization methods were applied in the different materials systems. Single-crystalline, ternary p-type Bi15Sb29Te56, and n-type Bi38Te55Se7 nanowires with power factors comparable to nanostructured bulkmaterialswere prepared by potential-pulsed electrochemical deposition in a nanostructured Al2O3 matrix. p-type Sb2Te3, n-type Bi2Te3, and n-type CoSb3 thin films were grown at room temperature using molecular beam epitaxy and were subsequently annealed at elevated temperatures. It yielded polycrystalline, single phase thin films with optimized charge carrier densities. In CoSb3 thin films the speed of sound could be reduced by filling the cage structure with Yb and alloying with Fe yielded p-type material. Bi2(Te0.91Se0.09)3/SiC and (Bi0.26Sb0.74)2Te3/SiC nanocomposites with low thermal conductivities and ZT values larger than 1 were prepared by spark plasma sintering. Nanostructure, texture, chemical composition, as well as electronic and phononic excitations were investigated by X-ray diffraction, nuclear resonance scattering, inelastic neutron scattering, M ossbauer spectroscopy, and transmission electron microscopy. Furthermore, for Bi2Te3 materials, ab-initio calculations together with equilibrium and non-equilibrium molecular dynamics simulations for point defects yielded their formation energies and their effect on lattice thermal conductivity, respectively. Current advances in thermoelectric Bi2Te3 and CoSb3 based nanomaterials are

  15. Observation and modeling of polycrystalline grain formation in Ge{sub 2}Sb{sub 2}Te{sub 5}

    SciTech Connect (OSTI)

    Burr, Geoffrey W.; Tchoulfian, Pierre; Topuria, Teya; Nyffeler, Clemens; Virwani, Kumar; Padilla, Alvaro; Shelby, Robert M.; Eskandari, Mona; Jackson, Bryan; Lee, Bong-Sub

    2012-05-15

    The relationship between the polycrystalline nature of phase change materials (such as Ge{sub 2}Sb{sub 2}Te{sub 5}) and the intermediate resistance states of phase change memory (PCM) devices has not been widely studied. A full understanding of such states will require knowledge of how polycrystalline grains form, how they interact with each other at various temperatures, and how the differing electrical (and thermal) characteristics within the grains and at their boundaries combine through percolation to produce the externally observed electrical (and thermal) characteristics of a PCM device. We address the first of these tasks (and introduce a vehicle for the second) by studying the formation of fcc polycrystalline grains from the as-deposited amorphous state in undoped Ge{sub 2}Sb{sub 2}Te{sub 5}. We perform ex situ transmission electron microscopy membrane experiments and then match these observations against numerical simulation. Ramped-anneal experiments show that the temperature ramp-rate strongly influences the median grain size. By truncating such ramped-anneal experiments at various peak temperatures, we convincingly demonstrate that the temperature range over which these grains are established is quite narrow. Subsequent annealing at elevated temperature appears to change these established distributions of grain sizes only slightly. Our numerical simulator--which models nuclei formation through classical nucleation theory and then tracks the subsequent time- and temperature-dependent growth of these grains--can match these experimental observations of initial grain distributions and crystallization temperature both qualitatively and quantitatively. These simulations show that the particular narrow temperature range over which crystallization occurs shifts as a function of temperature ramp-rate, which allows us to quantify the lower portions of the time-temperature-transformation map for Ge{sub 2}Sb{sub 2}Te{sub 5}. Future experiments and extensions of

  16. Effect of magnetic fields on the Kondo insulator CeRhSb: Magnetoresistance and high-field heat capacity measurements

    SciTech Connect (OSTI)

    Malik, S.K.; Menon, L.; Pecharsky, V.K.; Gschneidner, K.A. Jr.

    1997-05-01

    The compound CeRhSb is a mixed valent Ce-based compound which shows a gap in the electronic density of states at low temperatures. The gap manifests by a rise in electrical resistivity{emdash}below about 8 K from which the gap energy is estimated to be about 4 K. We have carried out heat capacity measurements on this compound in various applied fields up to 9.85 T. The magnetic contribution to the heat capacity, {Delta}C, is found to have a maximum in {Delta}C/T vs T at 10 K, below which {Delta}C/T is linear with T. This is attributed to the fact that below this temperature, in the gapped state, the electronic density of states decreases linearly with decreasing temperature. On application of a magnetic field, the electronic specific heat coefficient {gamma} in the gapped state increases by {approximately}4mJ/molK{sup 2}. The maximum in {Delta}C/T vs T is observed in all fields, which shifts to lower temperatures {approximately}1K at 5.32 T and raises again at 9.85 T to about the same values as at H=0T. This suggests that the gap exists for all fields up to 9.85 T. Above 10 K, in the mixed-valent state, {Delta}C/T vs T decreases with increasing temperature in zero field. There is hardly any effect of application of field in the mixed-valent state. We have also carried out magnetoresistance measurements on CeRhSb up to fields of 5.5 T at 2, 4.5, 10, 20, and 30 K. The magnetoresistance in CeRhSb is positive at temperatures of 4.5 K and above, in applied fields up to 5.5 T. At 5.5 T, the magnetoresistance is maximum at 4.5 K (6{percent}) and decreases with increasing temperature. The observation of the maximum is consistent with the observation of a maximum in {Delta}C/T vs T and is due to a change in the density of states. At a temperature of 2 K, a negative magnetoresistance is observed for magnetic fields greater than {approximately}3.5T which suggests reduction in the gap. {copyright} {ital 1997} {ital The American Physical Society}

  17. Measurement and modeling of infrared nonlinear absorption coefficients and laser-induced damage thresholds in Ge and GaSb

    SciTech Connect (OSTI)

    Wagner, T. J.; Bohn, M. J.; Coutu, R. A. Jr.; Gonzalez, L. P.; Murray, J. M.; Guha, S.; Schepler, K. L.

    2010-10-15

    Using a simultaneous fitting technique to extract nonlinear absorption coefficients from data at two pulse widths, we measure two-photon and free-carrier absorption coefficients for Ge and GaSb at 2.05 and 2.5 {mu}m for the first time, to our knowledge. Results agreed well with published theory. Single-shot damage thresholds were also measured at 2.5 {mu}m and agreed well with modeled thresholds using experimentally determined parameters including nonlinear absorption coefficients and temperature dependent linear absorption. The damage threshold for a single-layer Al{sub 2}O{sub 3} anti-reflective coating on Ge was 55% or 35% lower than the uncoated threshold for picosecond or nanosecond pulses, respectively.

  18. Characteristics of GaAsSb single quantum well lasers emitting near 1.3 {micro}m

    SciTech Connect (OSTI)

    SPAHN,OLGA B.; KLEM,JOHN F.

    2000-02-17

    The authors report data on GaAsSb single quantum well lasers grown on GaAs substrates. Room temperature pulsed emission at 1.275 {micro}m in a 1,250 {micro}m-long device has been observed. Minimum threshold current densities of 535 A/cm{sup 2} were measured in 2000 {micro}m long lasers. The authors also measured internal losses of 2--5 cm{sup {minus}1}, internal quantum efficiencies of 30-38% and characteristic temperature T{sub 0} of 67--77 C. From these parameters a gain constant G{sub 0} of 1,660 cm{sup {minus}1} and a transparency current density J{sub tr} of 134 A/cm{sup 2} were calculated. The results indicate the potential for fabricating 1.3 {micro}m VCSELs from these materials.

  19. Direct minority carrier transport characterization of InAs/InAsSb superlattice nBn photodetectors

    SciTech Connect (OSTI)

    Zuo, Daniel; Liu, Runyu; Wasserman, Daniel; Mabon, James; He, Zhao -Yu; Liu, Shi; Zhang, Yong -Hang; Kadlec, Emil A.; Olson, Benjamin V.; Shaner, Eric A.

    2015-02-18

    We present an extensive characterization of the minority carrier transport properties in an nBn mid-wave infrared detector incorporating a Ga-free InAs/InAsSb type-II superlattice as the absorbing region. Using a modified electron beam induced current technique in conjunction with time-resolved photoluminescence, we were able to determine several important transport parameters of the absorber region in the device, which uses a barrier layer to reduce dark current. For a device at liquid He temperatures we report a minority carrier diffusion length of 750 nm and a minority carrier lifetime of 202 ns, with a vertical diffusivity of 2.78 x 10–2 cm2/s. We also report on the device's optical response characteristics at 78 K.

  20. Direct minority carrier transport characterization of InAs/InAsSb superlattice nBn photodetectors

    SciTech Connect (OSTI)

    Zuo, Daniel Liu, Runyu; Wasserman, Daniel; Mabon, James; He, Zhao-Yu; Liu, Shi; Zhang, Yong-Hang; Kadlec, Emil A.; Olson, Benjamin V.; Shaner, Eric A.

    2015-02-16

    We present an extensive characterization of the minority carrier transport properties in an nBn mid-wave infrared detector incorporating a Ga-free InAs/InAsSb type-II superlattice as the absorbing region. Using a modified electron beam induced current technique in conjunction with time-resolved photoluminescence, we were able to determine several important transport parameters of the absorber region in the device, which uses a barrier layer to reduce dark current. For a device at liquid He temperatures, we report a minority carrier diffusion length of 750 nm and a minority carrier lifetime of 200 ns, with a vertical diffusivity of 3 × 10{sup −2} cm{sup 2}/s. We also report on the device's optical response characteristics at 78 K.

  1. Direct minority carrier transport characterization of InAs/InAsSb superlattice nBn photodetectors

    DOE PAGES-Beta [OSTI]

    Zuo, Daniel; Liu, Runyu; Wasserman, Daniel; Mabon, James; He, Zhao -Yu; Liu, Shi; Zhang, Yong -Hang; Kadlec, Emil A.; Olson, Benjamin V.; Shaner, Eric A.

    2015-02-18

    We present an extensive characterization of the minority carrier transport properties in an nBn mid-wave infrared detector incorporating a Ga-free InAs/InAsSb type-II superlattice as the absorbing region. Using a modified electron beam induced current technique in conjunction with time-resolved photoluminescence, we were able to determine several important transport parameters of the absorber region in the device, which uses a barrier layer to reduce dark current. For a device at liquid He temperatures we report a minority carrier diffusion length of 750 nm and a minority carrier lifetime of 202 ns, with a vertical diffusivity of 2.78 x 10–2 cm2/s. Wemore » also report on the device's optical response characteristics at 78 K.« less

  2. Atomic intermixing and interface roughness in short-period InAs/GaSb superlattices for infrared photodetectors

    SciTech Connect (OSTI)

    Ashuach, Y.; Lakin, E.; Kaufmann, Y.; Saguy, C.; Zolotoyabko, E.

    2014-09-28

    A set of advanced characterization methods, including high-resolution X-ray diffraction (measurements and simulations), cross-sectional scanning tunneling microscopy, and high-angle annular dark-field scanning transmission electron microscopy is applied to quantify the interface roughness and atomic intermixing (in both cation and anion sub-lattices) in short period (6–7 nm) InAs/GaSb superlattices intended for mid-wavelength (M) and long-wavelength (L) infrared detectors. The undesired atomic intermixing and interface roughness in the L-samples were found to be considerably lower than in the M-samples. In all specimens, anion intermixing is much higher than that in the cation sub-lattice. Possible origins of these findings are discussed.

  3. Structural characterization of Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} as a function of temperature using neutron powder diffraction and extended X-ray absorption fine structure techniques

    SciTech Connect (OSTI)

    Mansour, A. N.; Wong-Ng, W.; Huang, Q.; Tang, W.; Thompson, A.; Sharp, J.

    2014-08-28

    The structure of Bi{sub 2}Te{sub 3} (Seebeck coefficient Standard Reference Material (SRM™ 3451)) and the related phase Sb{sub 2}Te{sub 3} have been characterized as a function of temperature using the neutron powder diffraction (NPD) and the extended X-ray absorption fine structure (EXAFS) techniques. The neutron structural studies were carried out from 20 K to 300 K for Bi{sub 2}Te{sub 3} and from 10 K to 298 K for Sb{sub 2}Te{sub 3}. The EXAFS technique for studying the local structure of the two compounds was conducted from 19 K to 298 K. Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} are isostructural, with a space group of R3{sup ¯}m. The structure consists of repeated quintuple layers of atoms, Te2-M-Te1-M-Te2 (where M = Bi or Sb) stacking along the c-axis of the unit cell. EXAFS was used to examine the bond distances and static and thermal disorders for the first three shells of Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} as a function of temperature. The temperature dependencies of thermal disorders were analyzed using the Debye and Einstein models for lattice vibrations. The Debye and Einstein temperatures for the first two shells of Bi{sub 2}Te{sub 3} are similar to those of Sb{sub 2}Te{sub 3} within the uncertainty in the data. However, the Debye and Einstein temperatures for the third shell of Bi-Bi are significantly lower than those of the third shell of Sb-Sb. The Einstein temperature for the third shell is consistent with a soft phonon mode in both Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3}. The lower Einstein temperature of Bi-Bi relative to Sb-Sb is consistent with the lower value of thermal conductivity of Bi{sub 2}Te{sub 3} relative to Sb{sub 2}Te{sub 3}.

  4. Two new ternary lanthanide antimony chalcogenides: Yb{sub 4}Sb{sub 2}S{sub 11.25} and Tm{sub 4}Sb{sub 2}Se{sub 11.68} containing chalcogenide Q{sup 2-} and dichalcogenide (Q{sub 2}){sup 2-} anions

    SciTech Connect (OSTI)

    Babo, Jean-Marie; Albrecht-Schmitt, Thomas E.

    2012-03-15

    Dark red and dark brown crystals of Yb{sub 4}Sb{sub 2}S{sub 11.25} and Tm{sub 8}Sb{sub 4}Se{sub 11.68}, respectively, were obtained from the reaction of the elements in Sb{sub 2}Q{sub 3} (Q=S, Se) fluxes. Both non-stoichiometric compounds are orthorhombic and crystallize in the same space group Pnnm, with two formula units per unit cell (a=12.446(2), b=5.341(1), c=12.058(2) for sulfide and a=13.126(2), b=5.623(1), c=12.499(2) for the selenide). Their crystal structures are dominated by lanthanide-chalcogenide polyhedra (CN=7 and 8), which share corners, edges, triangular- and square-faces to form a three-dimensional framework embedding antinomy cations. The latter are coordinated by three sulfide anions with 5(1+2+2) secondary contacts forming basically infinite chains running along [0 1 0]. The chalcogens in both compounds form chalcogenide Q{sup 2-} and dichalcogenide (Q{sub 2}){sup 2-} anionic units. The optical analysis made on those compounds shows that both are semiconductors with band gap of 1.71 and 1.22 eV for Yb{sub 4}Sb{sub 2}S{sub 11.25} and Tm{sub 4}Sb{sub 2}Se{sub 11.75,} respectively. - Graphical Abstract: The crystal structure of Yb{sub 4}Sb{sub 2}S{sub 11} viewed along the [0 1 0]. Highlights: Black-Right-Pointing-Pointer Lanthanide chalcogenides. Black-Right-Pointing-Pointer Semiconductors. Black-Right-Pointing-Pointer Tunnel structures. Black-Right-Pointing-Pointer Lone-pair effects.

  5. Improved Thermoelectric Performance of p-type Skutterudite YbxFe4-yPtySb12 (0.8 x 1, y = 1 and 0.5)

    SciTech Connect (OSTI)

    Cho, Jung Y; Ye, Zuxin; Tessema, Misle; Salvador, James R.; Waldo, Richard; Yang, Jiong; Zhang, Weiqing; Yang, Jihui; Cai, Wei; Wang, Hsin

    2013-01-01

    Thermoelectric performance of p-type skutterudites currently lags that of the corresponding n-type materials and improvement of this important class of materials have become the focus of considerable research effort world-wide. Recent calculations find promising band structural features in p-type skutterudite materials of the type AeFe3NiSb12 ( Ae = Ca, Sr, or Ba) which could potentially lead to excellent thermoelectric properties. Recent work on the Yb- filled analog of the these formulations (YbFe3NiSb12) however finds that the onset of intrinsic conduction at lower than expected temperatures deteriorates the performance above 500 K leading to poor performance in the temperature range of interest for automotive waste heat recovery applications. We therefore seek a way to increase the band gap in order to find a way to minimize the deleterious effects of intrinsic conduction. Here we present ab initio band structure calculations and the synthesis and thermoelectric properties of YbxFe4-yPtySb12 (0.8 x 1, y = 1 and 0.5). Ab initio calculations find that the band gap increases for YbFe3PtSb12 as compared to the Ni-containing analog, though no such increase in the band gap energy was found for as compared to YbFe3.5Ni0.5Sb12. The y = 1 samples shows a characteristic transition to intrinsic conduction with a decrease in the Seebeck coefficient at temperatures above 700 K. The increased carrier concentration in y = 0.5 virtually eliminates any evidence of intrinsic conduction and the Seebeck coefficients for these samples increase monotonically up to 750 K, resulting in power factors approaching 27 W/cm K2 at 750 K. These power factors combined with low thermal conductivity result in a ZT = 0.9 at 750 K for Yb0.95Fe3.5Pt0.5Sb12.

  6. Investigation of arsenic and antimony capping layers, and half cycle reactions during atomic layer deposition of Al{sub 2}O{sub 3} on GaSb(100)

    SciTech Connect (OSTI)

    Zhernokletov, Dmitry M.; Dong, Hong; Brennan, Barry; Kim, Jiyoung; Wallace, Robert M.; Yakimov, Michael; Tokranov, Vadim; Oktyabrsky, Serge

    2013-11-15

    In-situ monochromatic x-ray photoelectron spectroscopy, low energy electron diffraction, ion scattering spectroscopy, and transmission electron microscopy are used to examine the GaSb(100) surfaces grown by molecular beam epitaxy after thermal desorption of a protective As or Sb layer and subsequent atomic layer deposition (ALD) of Al{sub 2}O{sub 3}. An antimony protective layer is found to be more favorable compared to an arsenic capping layer as it prevents As alloys from forming with the GaSb substrate. The evolution of oxide free GaSb/Al{sub 2}O{sub 3} interface is investigated by “half-cycle” ALD reactions of trimethyl aluminum and deionized water.

  7. Spectral behavior of the optical constants in the visible/near infrared of GeSbSe chalcogenide thin films grown at glancing angle

    SciTech Connect (OSTI)

    Martin-Palma, R. J.; Ryan, Joseph V.; Pantano, C. G.

    2007-04-23

    GeSbSe chalcogenide thin films were deposited using glancing angle deposition onto transparent glass substrates for the determination of the spectral behavior of the optical constants (index of refraction n and extinction coefficient k) in the visible and near infrared ranges (400-2500 nm) as a function of the deposition angle. Computational simulations based on the matrix method were employed to determine the values of the optical constants of the different films from the experimental reflectance and transmittance spectra. A significant dependence of the overall optical behavior on the deposition angle is found. Furthermore, the band gap of the GeSbSe thin films was calculated. The accurate determination of the optical constants of films grown at glancing angle will enable the development of sculptured thin film fiber-optic chemical sensors and biosensors.

  8. Explosive boiling of Ge{sub 35}Sb{sub 10}S{sub 55} glass induced by a CW laser

    SciTech Connect (OSTI)

    Knotek, P.; Tichy, L.

    2013-09-01

    Graphical abstract: - Highlights: Interaction of the CW 785 nm laser with chalcogenide GeSbS glass. First demonstration of the explosive boiling induced by CW laser in glass. Different processes as photo-induced oxidation, expansion, and viscosity-flow observed. Applied diagnostics SEM, DHM, AFM, force spectroscopy, and micro-Raman spectroscopy. Damage threshold determined at 1.2 10{sup 24}s{sup ?1} cm{sup ?3} of absorbed photons. - Abstract: The response of bulk Ge{sub 35}Sb{sub 10}S{sub 55} glass to illumination by a continuous wave (CW) laser, sub-band-gap photons, was studied specifically with an atomic force microscopy including a force spectroscopy, with a digital holographic microscopy and with a scanning electron microscopy. Depending on the number of photons absorbed, photo-expansion, photo-oxidation and explosive boiling were observed.

  9. Characterizing the Effects of Etch-induced Material Modification on the Crystallization Properties of Nitron Doped Ge2Sb2Te5

    SciTech Connect (OSTI)

    J Washington; E Joseph; S Raoux; J Jordan-Sweet; D Miller; H Cheng; A Schrott; C Chen; R Dasaka; et. al.

    2011-12-31

    The chemical and structural effects of processing on the crystallization of nitrogen doped Ge{sub 2}Sb{sub 2}Te{sub 5} is examined via x-ray photoelectron spectroscopy (XPS), x-ray absorption spectroscopy (XAS), time resolved laser reflectivity, and time resolved x-ray diffraction (XRD). Time resolved laser reflectivity and XRD show that exposure to various etch and ash chemistries significantly reduces the crystallization speed while the transition temperature from the rocksalt to the hexagonal phase is increased. XPS and XAS attribute this to the selective removal and oxidization of N, Ge, Sb, and Te, thus altering the local bonding environment to the detriment of device performance.

  10. Reverse Monte Carlo simulation of Se{sub 80}Te{sub 20} and Se{sub 80}Te{sub 15}Sb{sub 5} glasses

    SciTech Connect (OSTI)

    Abdel-Baset, A. M.; Rashad, M.; Moharram, A. H.

    2013-12-16

    Two-dimensional Monte Carlo of the total pair distribution functions g(r) is determined for Se{sub 80}Te{sub 20} and Se{sub 80}Te{sub 15}Sb{sub 5} alloys, and then it used to assemble the three-dimensional atomic configurations using the reverse Monte Carlo simulation. The partial pair distribution functions g{sub ij}(r) indicate that the basic structure unit in the Se{sub 80}Te{sub 15}Sb{sub 5} glass is di-antimony tri-selenide units connected together through Se-Se and Se-Te chain. The structure of Se{sub 80}Te{sub 20} alloys is a chain of Se-Te and Se-Se in addition to some rings of Se atoms.

  11. Neutron diffraction and thermoelectric properties of indium filled In x Co 4 Sb 12 ( x=0.05, 0.2) and indium cerium filled Ce 0.05 In 0.1 Co 4 Sb 12 skutterudites: Neutron diffraction and thermoelectric properties of In/Ce skutterudites

    DOE PAGES-Beta [OSTI]

    Sesselmann, Andreas; Klobes, Benedikt; Dasgupta, Titas; Gourdon, Olivier; Hermann, Raphael; Mueller, Eckhard

    2015-09-25

    The thermoelectric properties on polycrystalline single (In) and double filled (Ce, In) skutterudites are characterized between 300 and 700 K. Powder neutron diffraction measurements of the skutterudite compositions InxCo4Sb12 (x= 0.05, 0.2) and Ce0.05In0.1Co4Sb12 as a function of temperature (12- 300 K) were carried out, which gives more insight into the structural data of single and double-filled skutterudites. Our results show that due to the annealing treatment, a Sb deficiency is detectable and thus verifies defects at the Sb lattice site of the skutterudite. Furthermore, we show by electron microprobe analysis that a considerable amount of indium is lost duringmore » synthesis and post-processing for the single indium filled samples, but not for the double cerium and indium skutterudite sample. The double-filled skutterudite is superior to the single-filled skutterudite composition due to a higher charge carrier density, a comparable lattice thermal resistivity, and a higher density of states effective mass in our experiment. Finally, we obtained a significantly higher Einstein temperature for the double-filled skutterudite composition in comparison to the single-filled species, which reflects the high sensitivity due to filling of the void lattice position within the skutterudite crystal.« less

  12. Long-wavelength shift and enhanced room temperature photoluminescence efficiency in GaAsSb/InGaAs/GaAs-based heterostructures emitting in the spectral range of 1.01.2??m due to increased charge carrier's localization

    SciTech Connect (OSTI)

    Kryzhkov, D. I. Yablonsky, A. N.; Morozov, S. V.; Aleshkin, V. Ya.; Krasilnik, Z. F.; Zvonkov, B. N.; Vikhrova, O. V.

    2014-11-28

    In this work, a study of the photoluminescence (PL) temperature dependence in quantum well GaAs/GaAsSb and double quantum well InGaAs/GaAsSb/GaAs heterostructures grown by metalorganic chemical vapor deposition with different parameters of GaAsSb and InGaAs layers has been performed. It has been demonstrated that in double quantum well InGaAs/GaAsSb/GaAs heterostructures, a significant shift of the PL peak to a longer-wavelength region (up to 1.2??m) and a considerable reduction in the PL thermal quenching in comparison with GaAs/GaAsSb structures can be obtained due to better localization of charge carriers in the double quantum well. For InGaAs/GaAsSb/GaAs heterostructures, an additional channel of radiative recombination with participation of the excited energy states in the quantum well, competing with the main ground-state radiative transition, has been revealed.

  13. Record figure of merit values of highly stoichiometric Sb2Te3 porous bulk synthesized from tailor-made molecular precursors in ionic liquids

    DOE PAGES-Beta [OSTI]

    Heimann, Stefan; Schulz, Stephan; Schaumann, Julian; Mudring, Anja; Stötzel, Julia; Maculewicz, Franziska; Schierning, Gabi

    2015-08-06

    We report on the synthesis of Sb2Te3 nanoparticles with record-high figure of merit values of up to 1.5. The central thermoelectric parameters, electrical conductivity, thermal conductivity and Seebeck coefficient, were independently optimized. Critical influence of porosity for the fabrication of highly efficient thermoelectric materials is firstly demonstrated, giving a strong guidance for the optimization of other thermoelectric materials.

  14. Enhanced thermoelectric performance driven by high-temperature phase transition in the phase change material Ge4SbTe5

    SciTech Connect (OSTI)

    Williams, Jared B.; Lara-Curzio, Edgar; Cakmak, Ercan; Watkins, Thomas R.; Morelli, Donald T.

    2015-05-15

    Phase change materials are identified for their ability to rapidly alternate between amorphous and crystalline phases and have large contrast in the optical/electrical properties of the respective phases. The materials are primarily used in memory storage applications, but recently they have also been identified as potential thermoelectric materials. Many of the phase change materials researched today can be found on the pseudo-binary (GeTe)1-x(Sb2Te3)x tie-line. While many compounds on this tie-line have been recognized as thermoelectric materials, here we focus on Ge4SbTe5, a single phase compound just off of the (GeTe)1-x(Sb2Te3)x tie-line, that forms in a stable rocksalt crystal structure at room temperature. We find that stoichiometric and undoped Ge4SbTe5 exhibits a thermal conductivity of ~1.2 W/m-K at high temperature and a large Seebeck coefficient of ~250 μV/K. The resistivity decreases dramatically at 623 K due to a structural phase transition which lends to a large enhancement in both thermoelectric power factor and thermoelectric figure of merit at 823 K. In a more general sense the research presents evidence that phase change materials can potentially provide a new route to highly efficient thermoelectric materials for power generation at high temperature.

  15. Electron density distribution in BaPb{sub 1-x}Sb{sub x}O{sub 3} superconducting oxides studied by double nuclear magnetic resonance methods

    SciTech Connect (OSTI)

    Piskunov, Yu. V. Ogloblichev, V. V.; Arapova, I. Yu.; Sadykov, A. V.; Gerashchenko, A. P.; Verkhovskii, S. V.

    2011-11-15

    The effect of charge disorder on the formation of an inhomogeneous state of the electron system in the conduction band in BaPb{sub 1-x}Sb{sub x}O{sub 3} superconducting oxides is investigated experimentally by NMR methods. The NMR spectra of {sup 17}O are measured systematically, and the contributions from {sup 17}O atoms with different cation nearest surroundings are identified. It is found that microscopic regions with an elevated spin density of charge carriers are formed within two coordination spheres near antimony ions. Nuclei of the superconducting phase of the oxide (regions with an elevated antimony concentration) microscopically distributed over the sample are detected in compounds with x = 0.25 and 0.33. Experiments in which a double resonance signal of the spin echo of {sup 17}O-{sup 207}Pb and {sup 17}O-{sup 121}Sb are measured in the metal phase of BaPb{sub 1-x}Sb{sub x}O{sub 3} oxides are carried out for the first time. The constants of indirect heteronuclear spin-spin {sup 17}O-{sup 207}Pb interaction are determined as functions of the local Knight shift {sub 207}Ks. The estimates of the constants of the indirect interaction between the nuclei of the nearest neighbors (O-Pb and Pb-Pb atoms) and analysis of evolution of the NMR spectra of {sup 17}O upon a change in the antimony concentration are convincing evidence in favor of the development of a microscopically inhomogeneous state of the electron system in the metal phase of BaPb{sub 1-x}Sb{sub x}O{sub 3} oxides.

  16. SLUDGE BATCH 7 (SB7) WASHING DEMONSTRATION TO DETERMINE SULFATE/OXALATE REMOVAL EFFICIENCY AND SETTLING BEHAVIOR

    SciTech Connect (OSTI)

    Reboul, S.; Click, D.; Lambert, D.

    2010-12-10

    To support Sludge Batch 7 (SB7) washing, a demonstration of the proposed Tank Farm washing operation was performed utilizing a real-waste test slurry generated from Tank 4, 7, and 12 samples. The purpose of the demonstration was twofold: (1) to determine the settling time requirements and washing strategy needed to bring the SB7 slurry to the desired endpoint; and (2) to determine the impact of washing on the chemical and physical characteristics of the sludge, particularly those of sulfur content, oxalate content, and rheology. Seven wash cycles were conducted over a four month period to reduce the supernatant sodium concentration to approximately one molar. The long washing duration was due to the slow settling of the sludge and the limited compaction. Approximately 90% of the sulfur was removed through washing, and the vast majority of the sulfur was determined to be soluble from the start. In contrast, only about half of the oxalate was removed through washing, as most of the oxalate was initially insoluble and did not partition to the liquid phase until the latter washes. The final sulfur concentration was 0.45 wt% of the total solids, and the final oxalate concentration was 9,900 mg/kg slurry. More oxalate could have been removed through additional washing, although the washing would have reduced the supernatant sodium concentration.The yield stress of the final washed sludge (35 Pa) was an order of magnitude higher than that of the unwashed sludge ({approx}4 Pa) and was deemed potentially problematic. The high yield stress was related to the significant increase in insoluble solids that occurred ({approx}8 wt% to {approx}18 wt%) as soluble solids and water were removed from the slurry. Reduction of the insoluble solids concentration to {approx}14 wt% was needed to reduce the yield stress to an acceptable level. However, depending on the manner that the insoluble solids adjustment was performed, the final sodium concentration and extent of oxalate removal

  17. Optical absorption and intrinsic recombination in relaxed and strained InAs{sub 1–x}Sb{sub x} alloys for mid-wavelength infrared application

    SciTech Connect (OSTI)

    Wen, Hanqing; Bellotti, Enrico

    2015-11-30

    The intrinsic carrier recombination lifetime in relaxed and strained InAs{sub 1−x}Sb{sub x} alloys is investigated using the full-band Green's function theory. By computing the phonon-perturbed electron self-energy of the system, both direct and phonon-assisted indirect Auger and radiative processes are studied as functions of antimony molar fractions, lattice temperatures and applied in-plane biaxial strains. To improve the overall accuracy of the calculation, an empirical pseudopotential band structure for the alloy is also fitted to the measured band extrema and effective masses under different biaxial strains. A set of effective screened potentials valid for all the needed antimony fractions x and biaxial strains ϵ, therefore, is obtained and applied to the calculation. The results showed reduced total Auger recombination rates and enhanced radiative recombination rates in InAsSb alloys at room temperature when a compressive strain is applied. Furthermore, the study on the widely employed mid-wavelength infrared detector material, InAs{sub 0.91}Sb{sub 0.09}, strained by an InAs substrate, demonstrated that much longer minority carrier lifetime can be achieved compared to that in the lattice-matched situation when the lattice temperature is above 200 K.

  18. Ambient CdCl{sub 2} treatment on CdS buffer layer for improved performance of Sb{sub 2}Se{sub 3} thin film photovoltaics

    SciTech Connect (OSTI)

    Wang, Liang; Luo, Miao; Qin, Sikai; Liu, Xinsheng; Chen, Jie; Yang, Bo; Leng, Meiying; Xue, Ding-Jiang; Zhou, Ying; Gao, Liang; Song, Haisheng; Tang, Jiang

    2015-10-05

    Antimony selenide (Sb{sub 2}Se{sub 3}) is appealing as a promising light absorber because of its intrinsically benign grain boundaries, suitable band gap (∼1.1 eV), strong absorption coefficient, and relatively environmentally friendly constituents. Recently, we achieved a certified 5.6% efficiency Sb{sub 2}Se{sub 3} thin film solar cell with the assistance of ambient CdCl{sub 2} treatment on the CdS buffer layer. Here, we focused on investigating the underlying mechanism from a combined materials and device physics perspective applying current density-voltage (J-V) fitting analysis, atomic force microscope, X-ray photoelectron spectroscopy, fluorescence, and UV–Vis transmission spectroscopy. Our results indicated that ambient CdCl{sub 2} treatment on CdS film not only improved CdS grain size and quality, but also incorporated Cl and more O into the film, both of which can significantly improve the heterojunction quality and device performance of CdS/Sb{sub 2}Se{sub 3} solar cells.

  19. Electroforming of Bi(1-x)Sb(x) nanowires for high-efficiency micro-thermoelectric cooling devices on a chip.

    SciTech Connect (OSTI)

    Overmyer, Donald L.; Webb, Edmund Blackburn, III; Siegal, Michael P.; Yelton, William Graham

    2006-11-01

    Active cooling of electronic systems for space-based and terrestrial National Security missions has demanded use of Stirling, reverse-Brayton, closed Joule-Thompson, pulse tube and more elaborate refrigeration cycles. Such cryocoolers are large systems that are expensive, demand large powers, often contain moving parts and are difficult to integrate with electronic systems. On-chip, solid-state, active cooling would greatly enhance the capabilities of future systems by reducing the size, cost and inefficiencies compared to existing solutions. We proposed to develop the technology for a thermoelectric cooler capable of reaching 77K by replacing bulk thermoelectric materials with arrays of Bi{sub 1-x}Sb{sub x} nanowires. Furthermore, the Sandia-developed technique we will use to produce the oriented nanowires occurs at room temperature and can be applied directly to a silicon substrate. Key obstacles include (1) optimizing the Bi{sub 1-x}Sb{sub x} alloy composition for thermoelectric properties; (2) increasing wire aspect ratios to 3000:1; and (3) increasing the array density to {ge} 10{sup 9} wires/cm{sup 2}. The primary objective of this LDRD was to fabricate and test the thermoelectric properties of arrays of Bi{sub 1-x}Sb{sub x} nanowires. With this proof-of-concept data under our belts we are positioned to engage National Security systems customers to invest in the integration of on-chip thermoelectric coolers for future missions.

  20. Evidence of a Shockley-Read-Hall Defect State Independent of Band-Edge Energy in InAs/In(As,Sb) Type-II Superlattices

    DOE PAGES-Beta [OSTI]

    Aytac, Y.; Olson, B. V.; Kim, J. K.; Shaner, E. A.; Hawkins, S. D.; Klem, J. F.; Flatté, M. E.; Boggess, T. F.

    2016-05-24

    A set of seven InAs/InAsSb type-II superlattices (T2SLs) were designed to have speci c bandgap energies between 290 meV (4.3 m) and 135 meV (9.2 m) in order to study the e ects of the T2SL bandgap energy on the minority carrier lifetime. A temperature dependent optical pump-probe technique is used to measure the carrier lifetimes, and the e ect of a mid-gap defect level on the carrier recombination dynamics is reported. The Shockley-Read-Hall (SRH) defect state is found to be at energy of approximately -250 12 meV relative to the valence band edge of bulk GaSb for the entiremore » set of T2SL structures, even though the T2SL valence band edge shifts by 155 meV on the same scale. These results indicate that the SRH defect state in InAs/InAsSb T2SLs is singular and is nearly independent of the exact position of the T2SL bandgap or band edge energies. They also suggest the possibility of engineering the T2SL structure such that the SRH state is removed completely from the bandgap, a result that should signi cantly increase the minority carrier lifetime.« less

  1. Inductively coupled plasma-reactive ion etching of InSb using CH{sub 4}/H{sub 2}/Ar plasma

    SciTech Connect (OSTI)

    Zhang Guodong; Sun Weiguo; Xu Shuli; Zhao Hongyan; Su Hongyi; Wang Haizhen

    2009-07-15

    InSb is an important material for optoelectronic devices. Most InSb devices are currently wet etched, and the etching geometries are limited due to the isotropic nature of wet etching. Inductively coupled plasma (ICP)-reactive ion etching (RIE) is a more desirable alternative because it offers a means of producing small anisotropic structures especially needed in large format infrared focal plane arrays. This work describes the novel use of ICP-RIE for fabricating InSb mesas with CH{sub 4}/H{sub 2}/Ar plasma and presents the influences of the process parameters on the etch rate and surface morphology. The parameters investigated include bias radio frequency power (50-250 W), %CH{sub 4} in H{sub 2} (10-50), argon (Ar) partial pressure (0-0.3 Pa with total pressure of 1.0 Pa), and total pressure (0.35-4 Pa). With the process parameters optimized in this investigated ranges, good etching results have been achieved with etch rates up to 80 nm/min, and etch features with sidewall angles of about 80 degree sign , the etched surface is as smooth as before the RIE process.

  2. Temperature-dependent optical measurements of the dominant recombination mechanisms in InAs/InAsSb type-2 superlattices

    SciTech Connect (OSTI)

    Aytac, Y. Flatté, M. E.; Boggess, T. F.; Olson, B. V.; Kim, J. K.; Shaner, E. A.; Hawkins, S. D.; Klem, J. F.

    2015-09-28

    Temperature-dependent measurements of carrier recombination rates using a time-resolved optical pump-probe technique are reported for mid-wave infrared InAs/InAs{sub 1−x}Sb{sub x} type-2 superlattices (T2SLs). By engineering the layer widths and alloy compositions, a 16 K band-gap of ∼235 ± 10 meV was achieved for five unintentionally and four intentionally doped T2SLs. Carrier lifetimes were determined by fitting lifetime models based on Shockley-Read-Hall (SRH), radiative, and Auger recombination processes to the temperature and excess carrier density dependent data. The minority carrier (MC), radiative, and Auger lifetimes were observed to generally increase with increasing antimony content and decreasing layer thickness for the unintentionally doped T2SLs. The MC lifetime is limited by SRH processes at temperatures below 200 K in the unintentionally doped T2SLs. The extracted SRH defect energy levels were found to be near mid-bandgap. Also, it is observed that the MC lifetime is limited by Auger recombination in the intentionally doped T2SLs with doping levels greater than n ∼ 10{sup 16} cm{sup −3}.

  3. Effect of electron-electron interaction on cyclotron resonance in high-mobility InAs/AlSb quantum wells

    SciTech Connect (OSTI)

    Krishtopenko, S. S. Gavrilenko, V. I.; Ikonnikov, A. V.; Orlita, M.; Sadofyev, Yu. G.; Goiran, M.; Teppe, F.; Knap, W.

    2015-03-21

    We report observation of electron-electron (e-e) interaction effect on cyclotron resonance (CR) in InAs/AlSb quantum well heterostructures. High mobility values allow us to observe strongly pronounced triple splitting of CR line at noninteger filling factors of Landau levels ν. At magnetic fields, corresponding to ν > 4, experimental values of CR energies are in good agreement with single-electron calculations on the basis of eight-band k ⋅ p Hamiltonian. In the range of filling factors 3 < ν < 4 pronounced, splitting of CR line, exceeding significantly the difference in single-electron CR energies, is discovered. The strength of the splitting increases when occupation of the partially filled Landau level tends to a half, being in qualitative agreement with previous prediction by MacDonald and Kallin [Phys. Rev. B 40, 5795 (1989)]. We demonstrate that such behaviour of CR modes can be quantitatively described if one takes into account both electron correlations and the mixing between conduction and valence bands in the calculations of matrix elements of e-e interaction.

  4. Resistivity During Boiling in the SB-15-D Core from the Geysers Geothermal Field: The Effects of Capillarity

    SciTech Connect (OSTI)

    Roberts, J.; Duba, A.; Bonner, B.; Kasameyer, P.

    1997-01-01

    In a laboratory study of cores from borehole SB-15-D in The Geysers geothermal area, we measured the electrical resistivity of metashale with and without pore-pressure control, with confining pressures up to 100 bars and temperatures between 20 and 150 C, to determine how the pore-size distribution and capillarity affected boiling. We observed a gradual increase in resistivity when the downstream pore pressure or confining pressure decreased below the phase boundary of free water. For the conditions of this experiment, boiling, as indicated by an increase in resistivity, is initiated at pore pressures of approximately 0.5 to 1 bar (0.05 to 0.1 MPa) below the free-water boiling curve, and it continues to increase gradually as pressure is lowered to atmospheric. A simple model of the effects of capillarity suggests that at 145 C, less than 15% of the pore water can boil in these rocks. If subsequent experiments bear out these preliminary observations, then boiling within a geothermal reservoir is controlled not just by pressure and temperature but also by pore-size distribution. Thus, it may be possible to determine reservoir characteristics by monitoring changes in electrical resistivity as reservoir conditions change.

  5. An Air-Stable Na3SbS4 Superionic Conductor Prepared by a Rapid and Economic Synthetic Procedure

    SciTech Connect (OSTI)

    Wang, Hui; Chen, Yan; Hood, Zachary; Peng, Rui; Samuthira Pandian, Amaresh; Keum, Jong Kahk; Wu, Zili; An, Ke; Liang, Chengdu

    2016-01-01

    All-solid-state sodium batteries, using abundant sodium resources and solid electrolyte, hold much promise for safe, low cost, large-scale energy storage. To realize the practical applications of all solid Na-ion batteries at ambient temperature, the solid electrolytes are required to have high ionic conductivity, chemical stability, and ideally, easy preparation. Ceramic electrolytes show higher ionic conductivity than polymers, but they often require extremely stringent synthesis conditions, either high sintering temperature above 1000 C or long-time, low-energy ball milling. Herein, we report a new synthesis route for Na3SbS4, a novel Na superionic conductor that needs much lower processing temperature below 200 C and easy operation. This new solid electrolyte exhibits a remarkable ionic conductivity of 1.05 mS cm-1 at 25 C and is chemically stable under ambient atmosphere. This synthesis process provides unique insight into the current state-of-the-art solid electrolyte preparation and opens new possibilities for the design of similar materials.

  6. An Air-Stable Na3SbS4 Superionic Conductor Prepared by a Rapid and Economic Synthetic Procedure

    DOE PAGES-Beta [OSTI]

    Wang, Hui; Chen, Yan; Hood, Zachary; Peng, Rui; Samuthira Pandian, Amaresh; Keum, Jong Kahk; Wu, Zili; An, Ke; Liang, Chengdu

    2016-01-01

    All-solid-state sodium batteries, using abundant sodium resources and solid electrolyte, hold much promise for safe, low cost, large-scale energy storage. To realize the practical applications of all solid Na-ion batteries at ambient temperature, the solid electrolytes are required to have high ionic conductivity, chemical stability, and ideally, easy preparation. Ceramic electrolytes show higher ionic conductivity than polymers, but they often require extremely stringent synthesis conditions, either high sintering temperature above 1000 C or long-time, low-energy ball milling. Herein, we report a new synthesis route for Na3SbS4, a novel Na superionic conductor that needs much lower processing temperature below 200 Cmore » and easy operation. This new solid electrolyte exhibits a remarkable ionic conductivity of 1.05 mS cm-1 at 25 C and is chemically stable under ambient atmosphere. This synthesis process provides unique insight into the current state-of-the-art solid electrolyte preparation and opens new possibilities for the design of similar materials.« less

  7. Observation of a topologically non-trivial surface state in half-Heusler PtLuSb (001) thin films

    DOE PAGES-Beta [OSTI]

    Logan, J. A.; Patel, S. J.; Harrington, S. D.; Polley, C. M.; Schultz, B. D.; Balasubramanian, T.; Janotti, A.; Mikkelsen, A.; Palmstrøm, C. J.

    2016-06-27

    The discovery of topological insulators, materials with bulk band gaps and protected cross-gap surface states in compounds such as Bi2Se3, has generated much interest in identifying topological surface states (TSSs) in other classes of materials. In particular, recent theoretical calculations suggest that TSSs may be found in half-Heusler ternary compounds. If experimentally realizable, this would provide a materials platform for entirely new heterostructure spintronic devices that make use of the structurally identical but electronically varied nature of Heusler compounds. Here we show the presence of a TSS in epitaxially grown thin films of the half-Heusler compound PtLuSb. Spin- and angle-resolvedmore » photoemission spectroscopy, complemented by theoretical calculations, reveals a surface state with linear dispersion and a helical tangential spin texture consistent with previous predictions. As a result, this experimental verification of topological behavior is a significant step forward in establishing half-Heusler compounds as a viable material system for future spintronic devices.« less

  8. Optical and magnetotransport properties of InGaAs/GaAsSb/GaAs structures doped with a magnetic impurity

    SciTech Connect (OSTI)

    Kalentyeva, I. L. Zvonkov, B. N.; Vikhrova, O. V.; Danilov, Yu. A.; Demina, P. B.; Dorokhin, M. V.; Zdoroveyshchev, A. V.

    2015-11-15

    InGaAs/GaAsSb/GaAs bilayer quantum-well structures containing a magnetic-impurity δ-layer (Mn) at the GaAs/InGaAs interface are experimentally studied for the first time. The structures are fabricated by metal organic chemical-vapor deposition (MOCVD) and laser deposition on substrates of conducting (n{sup +}) and semi-insulating GaAs in a single growth cycle. The InGaAs-layer thickness is varied from 1.5 to 5 nm. The significant effect of a decrease in the InGaAs quantum-well thickness on the optical and magnetotransport properties of the structures under study is detected. Nonlinear magnetic-field dependence of the Hall resistance and negative magnetoresistance at temperatures of ≤30–40 K, circular polarization of the electroluminescence in a magnetic field, opposite behaviors of the photoluminescence and electroluminescence emission intensities in the structures, and an increase in the contribution of indirect transitions with decreasing InGaAs thickness are observed. Simulation shows that these effects can be caused by the influence of the δ-layer of acceptor impurity (Mn) on the band structure and the hole concentration distribution in the bilayer quantum well.

  9. Syntheses and properties of a family of new compounds RE{sub 3}Sb{sub 3}Co{sub 2}O{sub 14} (RE=La, Pr, Nd, Sm–Ho) with an ordered pyrochlore structure

    SciTech Connect (OSTI)

    Li, Kuo; Hu, Yufei; Wang, Yingxia; Kamiyama, Takashi; Wang, Bingwu; Li, Zhaofei; Lin, Jianhua

    2014-09-15

    Isostructural compounds RE{sub 3}Sb{sub 3}Co{sub 2}O{sub 14} (RE=La, Pr, Nd, Sm–Ho) with an ordered pyrochlore structure were synthesized. The structure of La{sub 3}Sb{sub 3}Co{sub 2}O{sub 14} was solved ab initio based on powder XRD data, and refined by combining with high resolution neutron diffraction data. La{sub 3}Sb{sub 3}Co{sub 2}O{sub 14} crystallizes in the space group R-3m with the unit cell parameters a=7.52954(2) Å and c=17.59983(6) Å. The structures of other members in this family are confirmed by Rietveld refinement using powder X-ray diffraction data. The cations (RE, Sb and Co) in RE{sub 3}Sb{sub 3}Co{sub 2}O{sub 14} are orderly distributed, presenting as [RE{sub 3}Co][Sb{sub 3}Co]O{sub 14} formula, and giving rise to two distinctive Kagome lattices constructed by RE{sup 3+} and Sb{sup 5+}, respectively. Co{sup 2+} occupies 8-coordinated and 6-coordinated environments, showing low spin (S=1/2) and high spin (S=3/2) states respectively. The magnetic susceptibility and UV–visual spectroscopy supports the magnetic observation. TDDFT calculation was performed to interpret the electronic states. The compounds [RE{sub 3}Co][Sb{sub 3}Co]O{sub 14} provide a profound example in which the ideal 2D Kagome lattice is derived from the 3D pyrochlore-type structure by an ordered distribution of the metal cations. - Graphical abstract: La{sub 3}Sb{sub 3}Co{sub 2}O{sub 14} crystallizes in a pyrochlore related structure with an ordered distribution of cations, giving rise to two sets of ideal 2D Kagome lattices formed by La{sup 3+} or Sb{sup 5+} respectively. This rhombohedral pyrochlore is a tolerant structure for stable compounds composed by many light rare-earth and d-transition elements. Substituting Zn{sup 2+} or Mg{sup 2+} for Co{sup 2+} will provide a series of compounds useful for studying magnetic interactions in the rare-earth Kagome lattices. - Highlights: • Pyrochlore-type La{sub 3}Sb{sub 3}Co{sub 2}O{sub 14} shows an ordered distribution of

  10. IMPACT OF SB4 TANK 40 DECANT AND ARP/MCU ADDITIONS WITH/WITHOUT ADDED CAUSTIC ON DWPF CPC PERFORMANCE

    SciTech Connect (OSTI)

    Koopman, D; David Best, D; Frances Williams, F

    2008-04-18

    The Savannah River National Laboratory (SRNL) was requested to investigate the impact of decanting supernate from the Sludge Batch four (SB4) feed in Tank 40. The specific questions concerned the potential impact on the stoichiometric acid window determined for SB4 with respect to overall hydrogen generation rates, nitrite destruction in the Sludge Receipt and Adjustment Tank (SRAT) and the rheology of the sludge, SRAT product, and Slurry Mix Evaporator (SME) product slurries. The scope included considering an addition of sodium hydroxide to Tank 40 to partially offset the sodium lost during decanting as well as considering the impact of bounding quantities of Actinide Removal Process (ARP) feed and Modular Caustic-Side Solvent Extraction Unit (MCU) feed on these same parameters. Simulated SB4 waste was first adjusted to match the dilution that has occurred in Tank 40 during the initial period of SB4 operations in the DWPF. The adjusted simulant was decanted an equivalent of 100,000 gallons relative to 413,740 gallons projected supernate volume. The decanted simulant was divided into two equal parts. One part received an addition of sodium hydroxide to increase the Na{sub 2}O content of the calcined sludge solids by about 3%. The baseline decanted simulant and caustic adjusted simulant were each tested in three pairs of DWPF process simulations of the SRAT and SME cycles. The simulations were at the nominal SB4 acid stoichiometry of 130% with and without bounding ARP/MCU additions and at 170% of acid without ARP/MCU. The 170% case without ARP/MCU was considered bounding relative to 170% with ARP/MCU based on calculated acid requirements. No significant negative impacts on the proposed acid operating window for the SRAT and SME cycles were noted in the simulations. Nitrite was successfully destroyed and mercury reduced in all six SRAT cycles. Hydrogen was produced in all six SRAT and SME cycles, but the levels were below the DWPF SRAT and SME cycle limits in all

  11. p-type conduction from Sb-doped ZnO thin films grown by dual ion beam sputtering in the absence of oxygen ambient

    SciTech Connect (OSTI)

    Kumar Pandey, Sushil; Kumar Pandey, Saurabh; Awasthi, Vishnu; Kumar, Ashish; Mukherjee, Shaibal; Deshpande, Uday P.; Gupta, Mukul

    2013-10-28

    Sb-doped ZnO (SZO) thin films were deposited on c-plane sapphire substrates by dual ion beam sputtering deposition system in the absence of oxygen ambient. The electrical, structural, morphological, and elemental properties of SZO thin films were studied for films grown at different substrate temperatures ranging from 200 °C to 600 °C and then annealed in situ at 800 °C under vacuum (pressure ∼5 × 10{sup −8} mbar). Films grown for temperature range of 200–500 °C showed p-type conduction with hole concentration of 1.374 × 10{sup 16} to 5.538 × 10{sup 16} cm{sup −3}, resistivity of 66.733–12.758 Ω cm, and carrier mobility of 4.964–8.846 cm{sup 2} V{sup −1} s{sup −1} at room temperature. However, the film grown at 600 °C showed n-type behavior. Additionally, current-voltage (I–V) characteristic of p-ZnO/n-Si heterojunction showed a diode-like behavior, and that further confirmed the p-type conduction in ZnO by Sb doping. X-ray diffraction measurements showed that all SZO films had (002) preferred crystal orientation. X-ray photoelectron spectroscopy analysis confirmed the formation of Sb{sub Zn}–2V{sub Zn} complex caused acceptor-like behavior in SZO films.

  12. Thermoelectric properties of Sn- and Pb-doped Tl{sub 9}BiTe{sub 6} and Tl{sub 9}SbTe{sub 6}

    SciTech Connect (OSTI)

    Guo, Quansheng; Chan, Meghan; Kuropatwa, Bryan A.; Kleinke, Holger

    2014-11-14

    A variety of substitutions in Tl{sub 9}BiTe{sub 6} and Tl{sub 9}SbTe{sub 6} with Sn and Pb, amounting to 14 different samples, were performed by melting the stoichiometric amounts of elements at 923 K, followed by slow cooling. The pulverized powders were sintered using the hot-pressing technique. All samples were of single phase according to the powder X-ray diffraction patterns. Thermoelectric property measurements were performed to investigate the effects of Sn- and Pb-doping on the electrical conductivity, Seebeck coefficient, and thermal conductivity. Increasing the concentration of the dopants caused increases in electrical and thermal conductivity, while decreasing the Seebeck coefficient. Tl{sub 9}Bi{sub 0.90}Pb{sub 0.10}Te{sub 6} and Tl{sub 9}Bi{sub 0.85}Pb{sub 0.15}Te{sub 6} exhibited the highest power factor. The changes in lattice thermal conductivity were minor and did not follow a clear trend. Competitive ZT values were obtained for Tl{sub 9}Bi{sub 0.95}Sn{sub 0.05}Te{sub 6}, Tl{sub 9}Bi{sub 0.95}Pb{sub 0.05}Te{sub 6}, Tl{sub 9}Sb{sub 0.97}Sn{sub 0.03}Te{sub 6}, and Tl{sub 9}Sb{sub 0.95}Pb{sub 0.05}Te{sub 6}, namely 0.95, 0.94, 0.83, and 0.71 around 500 K, respectively. Higher dopant concentrations led to lower ZT values.

  13. Current flow and potential efficiency of solar cells based on GaAs and GaSb p-n junctions

    SciTech Connect (OSTI)

    Andreev, V. M.; Evstropov, V. V.; Kalinovsky, V. S. Lantratov, V. M.; Khvostikov, V. P.

    2009-05-15

    Dependence of the efficiency of single-junction and multijunction solar cells on the mechanisms of current flow in photoactive p-n junctions, specifically on the form of the dark current-voltage characteristic J-V, has been studied. The resistanceless J-V{sub j} characteristic (with the series resistance disregarded) of a multijunction solar cell has the same shape as the characteristic of a single-junction cell: both feature a set of exponential portions. This made it possible to develop a unified analytical method for calculating the efficiency of singlejunction and multijunction solar cells. The equation relating the efficiency to the photogenerated current at each portion of the J-V{sub j} characteristic is derived. For p-n junctions in GaAs and GaSb, the following characteristics were measured: the dark J-V characteristic, the dependence of the open-circuit voltage on the illumination intensity P-V{sub OC}, and the dependence of the luminescence intensity on the forward current L-J. Calculated dependences of potential efficiency (under idealized condition for equality to unity of external quantum yield) on the photogenerated current for single-junction GaAs and GaSb solar cells and a GaAs/GaSb tandem are plotted. The form of these dependences corresponds to the shape of J-V{sub j} characteristics: there are the diffusion- and recombination-related portions; in some cases, the tunneling-trapping portion is also observed. At low degrees of concentration of solar radiation (C < 10), an appreciable contribution to photogenerated current is made by recombination component. It is an increase in this component in the case of irradiation with 6.78-MeV protons or 1-MeV electrons that brings about a decrease in the efficiency of conversion of unconcentrated solar radiation.

  14. DOE Climate Change Adaptation Training (Richland, WA)

    Office of Energy Efficiency and Renewable Energy (EERE)

    This free training is a primer on climate science, identifying climate hazards, conducting vulnerability assessments, leveraging climate change data and tools and understanding the energy-water-food nexus.

  15. Sumas, WA LNG Imports from Canada

    Gasoline and Diesel Fuel Update

    Alabama Alabama total electric power industry, summer capacity and net generation, by energy source, 2010 Nuclear 5,043 15.6 37,941 24.9 Coal 11,441 35.3 63,050 41.4 Hydro and Pumped Storage 3,272 10.1 8,704 5.7 Natural Gas 11,936 36.8 39,235 25.8 Other 1 100 0.3 643 0.4 Other Renewable 1 583 1.8 2,377 1.6 Petroleum 43 0.1 200 0.1 Total 32,417 100.0 152,151 100.0 Other Renewable: Wood, black liquor, other wood waste, biogenic municipal solid waste, landfill gas, sludge waste, agriculture

  16. EIS-0346: Salmon Creek Project, WA

    Energy.gov [DOE]

    This EIS analyzes BPA's proposal to fund activities that would restore sufficient water flows to Salmon Creek and rehabilitate its streambed as necessary to provide adequate passage for summer steelhead (Oncorhynchus mykiss) and possibly spring chinook (O. tshawytscha).

  17. Sumas, WA LNG Imports from Canada

    Annual Energy Outlook

    12,530 7,769 9,768 6,016 10,409 3,547 1996-2014 Pipeline Prices 5.55 4.81 4.47 3.87 4.02 5.05 1996...

  18. Sumas, WA LNG Imports from Canada

    Annual Energy Outlook

    309,516 332,358 313,922 312,236 333,050 359,343 1996-2014 Pipeline Prices 3.99 4.22 3.96 2.72 3.62 4.32 1996-2014 Liquefied Natural Gas Volumes 0 5 2013-2014 Liquefied Natural Gas...

  19. 2715-WA_Carpenter's_Shop_Refurbishment.pdf

    U.S. Department of Energy (DOE) all webpages (Extended Search)

  20. Lasing action and extraordinary reduction in long radiative lifetime of type-II GaSb/GaAs quantum dots using circular photonic crystal nanocavity

    SciTech Connect (OSTI)

    Hsu, Kung-Shu; Chang, Shu-Wei; Hung, Wei-Chun; Chang, Chih-Chi; Lin, Wei-Hsun; Lin, Shih-Yen; Shih, Min-Hsiung; Lee, Po-Tsung; Chang, Yia-Chung

    2015-08-31

    We demonstrated the lasing action and remarkable reduction in long radiative lifetimes of type-II GaSb/GaAs quantum dots using a circular photonic-crystal nano-cavity with high Purcell factors. The associated enhancement in carrier recombination was surprisingly high and could even surpass type-I counterparts in similar conditions. These phenomena reveal that the type-II sample exhibited extremely low nonradiative recombination so that weak radiative transitions were more dominant than expected. The results indicate that type-II nanostructures may be advantageous for applications which require controllable radiative transitions but low nonradiative depletions.

  1. Effects of localization on hot carriers in InAs/AlAs{sub x}Sb{sub 1–x} quantum wells

    SciTech Connect (OSTI)

    Tang, J.; Whiteside, V. R.; Esmaielpour, H.; Vijeyaragunathan, S.; Mishima, T. D.; Santos, M. B.; Sellers, I. R.

    2015-02-09

    The temperature dependence of a InAs/AlAs{sub 0.84}Sb{sub 0.16} multi-quantum-well sample is studied using continuous wave photoluminescence. An “s-shape” shift in peak energy is observed and attributed to low energy localization states. High incident power density photoluminescence measurements were performed to probe the nature of such localization. The results opposed the possibility of a type-II band structure and supported the idea of low energy localization states. The effect of such localization on hot carriers in our system was studied and an improvement in their stability due to hole mobility at elevated temperature is presented.

  2. Synthesis and crystal structure of [(C{sub 7}H{sub 10}N){sub 2}]{sup 2+} [Sb{sub 2}Cl{sub 8}]{sup 2-1}

    SciTech Connect (OSTI)

    Guo Yun Zhang Miao; Shen Liang; Jin Yingying; Jin Zhimin

    2010-12-15

    The reaction of 2,6-dimethylpyridine with SbCl{sub 3} and HCl affords the title compound, the structure of which is ascertained by X-ray diffraction. The unit cell consists of one bridged Sb{sub 2}Cl{sub 8}{sup 2-} anion and two 2,6-dimethylpyridinium cations. The trivalent antimony ion is bonded not only directly to chlorine anions, but also is coordinated with chlorine anions by secondary bonds. In the crystal, there exists infinite coordinated chains of [Sb{sub 2}Cl{sub 8}]{sub n}{sup 2n-} anions running along the a axis, which link 2,6-dimethylpyridinium cations by N-H-Cl hydrogen bonds.

  3. Impact of substrate temperature on the structural and optical properties of strain-balanced InAs/InAsSb type-II superlattices grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Liu, Shi; Li, Hua; Cellek, Oray O.; Ding, Ding; Lin, Zhi-Yuan; Steenbergen, Elizabeth H.; He, Zhao-Yu; Johnson, Shane R.; Zhang, Yong-Hang; Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287 ; Shen, Xiao-Meng; School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287 ; Fan, Jin; Smith, David J.; Department of Physics, Arizona State University, Tempe, Arizona 85287 ; Lu, Jing

    2013-02-18

    Molecular beam epitaxial growth of strain-balanced InAs/InAs{sub 1-x}Sb{sub x} type-II superlattices on GaSb substrates has been investigated for substrate temperatures from 400 Degree-Sign C to 450 Degree-Sign C. The Sb composition is found to vary linearly with substrate temperature at constant V/III ratios. For samples grown at the optimized substrate temperature (410 Degree-Sign C), superlattice zero-order peak full-width at half-maximums are routinely less than 25 arc sec using high-resolution X-ray diffraction. Cross-sectional transmission electron microscopy images show the absence of any visible defects. Strong photoluminescence covers a wavelength range from 5.5 to 13 {mu}m at 12 K. Photoluminescence linewidth simulations show satisfactory agreement with experiments.

  4. Direct imaging of crystal structure and defects in metastable Ge{sub 2}Sb{sub 2}Te{sub 5} by quantitative aberration-corrected scanning transmission electron microscopy

    SciTech Connect (OSTI)

    Ross, Ulrich; Lotnyk, Andriy Thelander, Erik; Rauschenbach, Bernd

    2014-03-24

    Knowledge about the atomic structure and vacancy distribution in phase change materials is of foremost importance in order to understand the underlying mechanism of fast reversible phase transformation. In this Letter, by combining state-of-the-art aberration-corrected scanning transmission electron microscopy with image simulations, we are able to map the local atomic structure and composition of a textured metastable Ge{sub 2}Sb{sub 2}Te{sub 5} thin film deposited by pulsed laser deposition with excellent spatial resolution. The atomic-resolution scanning transmission electron microscopy investigations display the heterogeneous defect structure of the Ge{sub 2}Sb{sub 2}Te{sub 5} phase. The obtained results are discussed. Highly oriented Ge{sub 2}Sb{sub 2}Te{sub 5} thin films appear to be a promising approach for further atomic-resolution investigations of the phase change behavior of this material class.

  5. Two dimensional electron transport in modulation-doped In{sub 0.53}Ga{sub 0.47}As/AlAs{sub 0.56}Sb{sub 0.44} ultrathin quantum wells

    SciTech Connect (OSTI)

    Huang, Cheng-Ying Law, Jeremy J. M.; Rodwell, Mark J. W.; Lu, Hong; Gossard, Arthur C.; Jena, Debdeep

    2014-03-28

    We have investigated the growth and electron transport in In{sub 0.53}Ga{sub 0.47}As/AlAs{sub 0.56}Sb{sub 0.44} two dimensional electron gases (2DEG) and compared their properties with In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As 2DEGs. For 10?nm thick InGaAs wells, the electron mobility of InGaAs/AlAsSb 2DEGs is comparable to that of InGaAs/InAlAs 2DEGs. Upon thinning the wells to 3?nm, the 2DEG mobility is degraded quickly and stronger interface roughness scattering is observed for InGaAs/AlAsSb heterointerfaces than for InGaAs/InAlAs heterointerfaces. Changing the group-V exposure between As and Sb during growth interruptions at the InGaAs/AlAsSb interfaces did not significantly change the 2DEG mobility. With the insertion of a two monolayer InAlAs at the InGaAs/AlAsSb interfaces, the interface roughness scattering is reduced and the mobility greatly increased. The room temperature 2DEG mobility shows 66% improvement from 1.63??10{sup 3} cm{sup 2}/Vs to 2.71??10{sup 3}?cm{sup 2}/Vs for a 3?nm InGaAs well.

  6. Hard x-ray photoelectron spectroscopy study of Ge{sub 2}Sb{sub 2}Te{sub 5}; as-deposited amorphous, crystalline, and laser-reamorphized

    SciTech Connect (OSTI)

    Richter, Jan H. Tominaga, Junji; Fons, Paul; Kolobov, Alex V.; Ueda, Shigenori; Yoshikawa, Hideki; Yamashita, Yoshiyuki; Ishimaru, Satoshi; Kobayashi, Keisuke

    2014-02-10

    We have investigated the electronic structure of as-deposited, crystalline, and laser-reamorphized Ge{sub 2}Sb{sub 2}Te{sub 5} using high resolution, hard x-ray photoemission spectroscopy. A shift in the Fermi level as well as a broadening of the spectral features in the valence band and the Ge 3d level between the amorphous and crystalline state is observed. Upon amorphization, Ge 3d and Sb 4d spectra show a surprisingly small breaking of resonant bonds and changes in the bonding character as evidenced by the very similar density of states in all cases.

  7. Kondo Lattice Behavior in the Ordered Dilute Magnetic Semiconductor Yb14-xLaxMnSb11

    SciTech Connect (OSTI)

    Sales, Brian C; Khalifah, Peter; Enck, Thomas P; Nagler, Evan J; Sykora, Richard E; Jin, Rongying; Mandrus, David

    2005-01-01

    We report Hall, magnetic, heat capacity, and doping studies from single crystals of Yb{sub 14}MnSb{sub 11} and Yb{sub 13.3}La{sub 0.7}MnSb{sub 11}. These heavily doped semiconducting compounds are ferromagnetic below 53 and 39 K, respectively. The renormalization of the carrier mass from 2m{sub 3} near room temperature to 20m{sub e} at 5 K, plus the magnetic evidence for partial screening of the Mn magnetic moments suggest that these compounds represent rare examples of an underscreened Kondo lattice with T{sub K} {approx} 285 K.

  8. Electron-phonon coupling and thermal transport in the thermoelectric compound Mo3Sb7–xTex

    SciTech Connect (OSTI)

    Bansal, Dipanshu; Li, Chen W.; Said, Ayman H.; Abernathy, Douglas L.; Yan, Jiaqiang; Delaire, Olivier A.

    2015-12-07

    Phonon properties of Mo3Sb7–xTex (x = 0, 1.5, 1.7), a potential high-temperature thermoelectric material, have been studied with inelastic neutron and x-ray scattering, and with first-principles simulations. The substitution of Te for Sb leads to pronounced changes in the electronic struc- ture, local bonding, phonon density of states (DOS), dispersions, and phonon lifetimes. Alloying with tellurium shifts the Fermi level upward, near the top of the valence band, resulting in a strong suppression of electron-phonon screening, and a large overall stiffening of interatomic force- constants. The suppression in electron-phonon coupling concomitantly increases group velocities and suppresses phonon scattering rates, surpassing the effects of alloy-disorder scattering, and re- sulting in a surprising increased lattice thermal conductivity in the alloy. We also identify that the local bonding environment changes non-uniformly around different atoms, leading to variable perturbation strengths for different optical phonon branches. The respective roles of changes in phonon group velocities and phonon lifetimes on the lattice thermal conductivity are quantified. Lastly, our results highlight the importance of the electron-phonon coupling on phonon mean-free-paths in this compound, and also estimates the contributions from boundary scattering, umklapp scattering, and point-defect scattering.

  9. Disorder-induced anomalously signed Hall effect in crystalline GeTe/Sb{sub 2}Te{sub 3} superlattice-like materials

    SciTech Connect (OSTI)

    Tong, H.; Yu, N. N.; Yang, Z.; Cheng, X. M.; Miao, X. S.

    2015-08-21

    Opposite to the almost persistent p-type conductivity of the crystalline chalcogenides along the GeTe-Sb{sub 2}Te{sub 3} tie line, n-type Hall mobility is observed in crystalline GeTe/Sb{sub 2}Te{sub 3} superlattice-like material (SLL) with a short period length. We suggest that this unusual carrier characteristic originates from the structural disorder introduced by the lattice strain and dangling bonds at the SLL interfaces, which makes the crystalline SLLs behave like the amorphous chalcogenides. Detailed structural disorder in crystalline SLL has been studied by Raman scattering, X-ray photoelectron spectroscopy, as well as Variable-energy positron annihilation spectroscopy measurements. First-principles calculations results show that this structural disorder gives rise to three-site junctions that dominate the charge transport as the period length decreases and result in the anomalously signed Hall effect in the crystalline SLL. Our findings indicate a similar tetrahedral structure in the amorphous and crystalline states of SLLs, which can significantly reduce the entropy difference. Due to the reduced entropy loss and increased resistivity of crystalline phase introduced by disorder, it is not surprising that the SLLs exhibit extremely lower RESET current and power consumption.

  10. Formation of medical radioisotopes {sup 111}In, {sup 117m}Sn, {sup 124}Sb, and {sup 177}Lu in photonuclear reactions

    SciTech Connect (OSTI)

    Danagulyan, A. S.; Hovhannisyan, G. H. Bakhshiyan, T. M.; Avagyan, R. H.; Avetisyan, A. E.; Kerobyan, I. A.; Dallakyan, R. K.

    2015-06-15

    The possibility of the photonuclear production of radioisotopes {sup 111}In, {sup 117m}Sn, {sup 124}Sb, and {sup 177}Lu is discussed. Reaction yields were measured by the gamma-activation method. The enriched tin isotopes {sup 112,} {sup 118}Sn and Te and HfO{sub 2} of natural isotopic composition were used as targets. The targets were irradiated at the linear electron accelerator of Alikhanian National Science Laboratory (Yerevan) at the energy of 40 MeV. The experimental results obtained in this way reveal that the yield and purity of radioisotopes {sup 111}In and {sup 117}mSn are acceptable for their production via photonuclear reactions. Reactions proceeding on targets from Te and HfO{sub 2} of natural isotopic composition and leading to the formation of {sup 124}Sb and {sup 177}Lu have small yields and are hardly appropriate for the photoproduction of these radioisotopes even in the case of enriched targets.

  11. Evaluation of stacking faults and associated partial dislocations in AlSb/GaAs (001) interface by aberration-corrected high-resolution transmission electron microscopy

    SciTech Connect (OSTI)

    Wen, C.; Ge, B. H.; Cui, Y. X.; Li, F. H.; Zhu, J.; Yu, R.; Cheng, Z. Y.

    2014-11-15

    The stacking faults (SFs) in an AlSb/GaAs (001) interface were investigated using a 300 kV spherical aberration-corrected high-resolution transmission electron microscope (HRTEM). The structure and strain distribution of the single and intersecting (V-shaped) SFs associated with partial dislocations (PDs) were characterized by the [110] HRTEM images and geometric phase analysis, respectively. In the biaxial strain maps ?{sub xx} and ?{sub yy}, a SF can be divided into several sections under different strain states (positive or negative strain values). Furthermore, the strain state for the same section of a SF is in contrast to each other in ?{sub xx} and ?{sub yy} strain maps. The modification in the strain states was attributed to the variation in the local atomic displacements for the SF in the AlSb film on the GaAs substrate recorded in the lattice image. Finally, the single SF was found to be bounded by two 30 PDs. A pair of 30 PDs near the heteroepitaxial interface reacted to form a Lomer-Cottrell sessile dislocation located at the vertices of V-shaped SFs with opposite screw components. The roles of misfit dislocations, such as the PDs, in strain relaxation were also discussed.

  12. Thermoelectric Properties of P-type Skutterudites YbxFe3.5Ni0.5Sb12 (0.8 x 1)

    SciTech Connect (OSTI)

    Cho, Jung Y; Ye, Zuxin; Tessema, M.; Waldo, R.A.; Salvador, James R.; Yang, Jihui; Cai, Wei; Wang, Hsin

    2012-01-01

    P-type skutterudites, with nominal compositions YbxFe3.5Ni0.5Sb12 (0.8 x 1), have been synthesized by induction melting with subsequent annealing, and their thermoelectric properties evaluated from 3.5 K to 745 K to assess their suitability for thermoelectric based waste heat recovery applications. We report results for the synthesis and measurements of Seebeck coefficient (S), electrical resistivity ( ), thermal conductivity ( ), Hall coefficient (RH), and effective mass (m*/m0) of YbxFe3.5Ni0.5Sb12 (0.8 x 1). Powder x-ray diffraction and electron probe microanalysis (EPMA) show that this system has a narrow filling fraction range of x ~ 0.84 to 0.86 for Yb in the crystallographic voids. All samples show positive RH for the entire temperature range studied with carrier concentrations ranging from 9.6 1020 to 2.8 1021 cm-3 at room temperature. Relatively high values of S result in high power factors up to 17 Wcm-1K-2 at room temperature. However, large values of and a sharp reduction in the S at high temperature due to bipolar conduction prevent the attainment of high thermoelectric figure of merit.

  13. Ordered and disordered polymorphs of Na(Ni2/3Sb1/3)O₂: Honeycomb-ordered cathodes for Na-ion batteries

    DOE PAGES-Beta [OSTI]

    Ma, Jeffrey; Wu, Lijun; Bo, Shou -Hang; Khalifah, Peter G.; Grey, Clare P.; Zhu, Yimei

    2015-04-14

    Na-ion batteries are appealing alternatives to Li-ion battery systems for large-scale energy storage applications in which elemental cost and abundance are important. Although it is difficult to find Na-ion batteries which achieve substantial specific capacities at voltages above 3 V (vs Na⁺/Na), the honeycomb-layered compound Na(Ni2/3Sb1/3)O₂ can deliver up to 130 mAh/g of capacity at voltages above 3 V with this capacity concentrated in plateaus at 3.27 and 3.64 V. Comprehensive crystallographic studies have been carried out in order to understand the role of disorder in this system which can be prepared in both “disordered” and “ordered” forms, depending onmore » the synthesis conditions. The average structure of Na(Ni2/3Sb1/3)O₂ is always found to adopt an O3-type stacking sequence, though different structures for the disordered (R3¯m, #166, a = b = 3.06253(3) Å and c = 16.05192(7) Å) and ordered variants (C2/m, #12, a = 5.30458(1) Å, b = 9.18432(1) Å, c = 5.62742(1) Å and β = 108.2797(2)°) are demonstrated through the combined Rietveld refinement of synchrotron X-ray and time-of-flight neutron powder diffraction data. However, pair distribution function studies find that the local structure of disordered Na(Ni2/3Sb1/3)O₂ is more correctly described using the honeycomb-ordered structural model, and solid state NMR studies confirm that the well-developed honeycomb ordering of Ni and Sb cations within the transition metal layers is indistinguishable from that of the ordered phase. The disorder is instead found to mainly occur perpendicular to the honeycomb layers with an observed coherence length of not much more than 1 nm seen in electron diffraction studies. When the Na environment is probed through ²³Na solid state NMR, no evidence is found for prismatic Na environments, and a bulk diffraction analysis finds no evidence of conventional stacking faults. The lack of long range coherence is instead attributed to disorder among the

  14. Namibia-UNEP Green Economy Advisory Services | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    the Middle East, including the following: Armenia, Azerbaijan, Barbados, Burkina Faso, China, Egypt, Ghana, Indonesia, Jordan, Kenya, Korea, Mali, Mexico, Moldova, Mongolia,...

  15. High-Temperature Thermoelectric Properties of the Solid-Solution Zintl Phase Eu11Cd6Sb12-xAsx (x < 3)

    SciTech Connect (OSTI)

    Kazem, Nasrin; Xie, Weiwei; Ohno, Saneyuki; Zevalkink, Alexandra; Miller, Gordon J.; Snyder, G. Jeffrey; Kauzlarich, Susan M.

    2014-02-20

    Zintl phases are compounds that have shown promise for thermoelectric applications. The title solid–solution Zintl compounds were prepared from the elements as single crystals using a tin flux for compositions x = 0, 1, 2, and 3. Eu11Cd6Sb12–xAsx (x < 3) crystallize isostructurally in the centrosymmetric monoclinic space group C2/m (no. 12, Z = 2) as the Sr11Cd6Sb12 structure type (Pearson symbol mC58). Efforts to make the As compositions for x exceeding ~3 resulted in structures other than the Sr11Cd6Sb12 structure type. Single-crystal X-ray diffraction indicates that As does not randomly substitute for Sb in the structure but is site specific for each composition. The amount of As determined by structural refinement was verified by electron microprobe analysis. Electronic structures and energies calculated for various model structures of Eu11Cd6Sb10As2 (x = 2) indicated that the preferred As substitution pattern involves a mixture of three of the six pnicogen sites in the asymmetric unit. In addition, As substitution at the Pn4 site opens an energy gap at the Fermi level, whereas substitution at the other five pnicogen sites remains semimetallic with a pseudo gap. Thermoelectric properties of these compounds were measured on hot-pressed, fully densified pellets. Samples show exceptionally low lattice thermal conductivities from room temperature to 775 K: 0.78–0.49 W/mK for x = 0; 0.72–0.53 W/mK for x = 1; and 0.70–0.56 W/mK for x = 2. Eu11Cd6Sb12 shows a high p-type Seebeck coefficient (from +118 to 153 μ V/K) but also high electrical resistivity (6.8 to 12.8 mΩ·cm). The value of zT reaches 0.23 at 774 K. The properties of Eu11Cd6Sb12–xAsx are interpreted in discussion with the As site substitution.

  16. Neutron diffraction and thermoelectric properties of indium filled In x Co 4 Sb 12 ( x=0.05, 0.2) and indium cerium filled Ce 0.05 In 0.1 Co 4 Sb 12 skutterudites: Neutron diffraction and thermoelectric properties of In/Ce skutterudites

    SciTech Connect (OSTI)

    Sesselmann, Andreas; Klobes, Benedikt; Dasgupta, Titas; Gourdon, Olivier; Hermann, Raphael; Mueller, Eckhard

    2015-09-25

    The thermoelectric properties on polycrystalline single (In) and double filled (Ce, In) skutterudites are characterized between 300 and 700 K. Powder neutron diffraction measurements of the skutterudite compositions InxCo4Sb12 (x= 0.05, 0.2) and Ce0.05In0.1Co4Sb12 as a function of temperature (12- 300 K) were carried out, which gives more insight into the structural data of single and double-filled skutterudites. Our results show that due to the annealing treatment, a Sb deficiency is detectable and thus verifies defects at the Sb lattice site of the skutterudite. Furthermore, we show by electron microprobe analysis that a considerable amount of indium is lost during synthesis and post-processing for the single indium filled samples, but not for the double cerium and indium skutterudite sample. The double-filled skutterudite is superior to the single-filled skutterudite composition due to a higher charge carrier density, a comparable lattice thermal resistivity, and a higher density of states effective mass in our experiment. Finally, we obtained a significantly higher Einstein temperature for the double-filled skutterudite composition in comparison to the single-filled species, which reflects the high sensitivity due to filling of the void lattice position within the skutterudite crystal.

  17. Minority carrier lifetime and dark current measurements in mid-wavelength infrared InAs0.91Sb0.09 alloy nBn photodetectors

    DOE PAGES-Beta [OSTI]

    Olson, B. V.; Kim, J. K.; Kadlec, E. A.; Klem, J. F.; Hawkins, S. D.; Leonhardt, D.; Coon, W. T.; Fortune, T. R.; Cavaliere, M. A.; Tauke-Pedretti, A.; et al

    2015-11-03

    Carrier lifetime and dark current measurements are reported for a mid-wavelength infrared InAs 0.91Sb0.09 alloy nBn photodetector. Minority carrier lifetimes are measured using a non-contact time-resolved microwave technique on unprocessed portions of the nBn wafer and the Auger recombination Bloch function parameter is determined to be |F1F2|=0.292. Moreover, the measured lifetimes are also used to calculate the expected diffusion dark current of the nBn devices and are compared with the experimental dark current measured in processed photodetector pixels from the same wafer. As a result, excellent agreement is found between the two, highlighting the important relationship between lifetimes and diffusionmore » currents in nBn photodetectors.« less

  18. Surface and interfacial reaction study of half cycle atomic layer deposited HfO{sub 2} on chemically treated GaSb surfaces

    SciTech Connect (OSTI)

    Zhernokletov, D. M.; Dong, H.; Brennan, B.; Kim, J.; Yakimov, M.; Tokranov, V.; Oktyabrsky, S.; Wallace, R. M.; Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080

    2013-04-01

    An in situ half-cycle atomic layer deposition/X-ray photoelectron spectroscopy (XPS) study was conducted in order to investigate the evolution of the HfO{sub 2} dielectric interface with GaSb(100) surfaces after sulfur passivation and HCl etching, designed to remove the native oxides. With the first pulses of tetrakis(dimethylamido)hafnium(IV) and water, a decrease in the concentration of antimony oxide states present on the HCl-etched surface is observed, while antimony sulfur states diminished below the XPS detection limit on sulfur passivated surface. An increase in the amount of gallium oxide/sulfide is seen, suggesting oxygen or sulfur transfers from antimony to gallium during antimony oxides/sulfides decomposition.

  19. Oxidized crystalline (3 1)-O surface phases of InAs and InSb studied by high-resolution photoelectron spectroscopy

    SciTech Connect (OSTI)

    Tuominen, M. E-mail: pekka.laukkanen@utu.fi; Lng, J.; Dahl, J.; Yasir, M.; Mkel, J.; Punkkinen, M. P. J.; Laukkanen, P. E-mail: pekka.laukkanen@utu.fi; Kokko, K.; Kuzmin, M.; Osiecki, J. R.; Schulte, K.

    2015-01-05

    The pre-oxidized crystalline (31)-O structure of InAs(100) has been recently found to significantly improve insulator/InAs junctions for devices, but the atomic structure and formation of this useful oxide layer are not well understood. We report high-resolution photoelectron spectroscopy analysis of (31)-O on InAs(100) and InSb(100). The findings reveal that the atomic structure of (31)-O consists of In atoms with unexpected negative (between ?0.64 and ?0.47?eV) and only moderate positive (In{sub 2}O type) core-level shifts; highly oxidized group-V sites; and four different oxygen sites. These fingerprint shifts are compared to those of previously studied oxides of III-V to elucidate oxidation processes.

  20. Neutron Scattering Investigation of Phonon Scattering Rates in Ag1-xSb1+xTe2+x (x = 0, 0.1, and 0.2)

    SciTech Connect (OSTI)

    Abernathy, Douglas L [ORNL; Budai, John D [ORNL; Delaire, Olivier A [ORNL; Ehlers, Georg [ORNL; Hong, Tao [ORNL; Karapetrova, Evguenia A. [Argonne National Laboratory (ANL); Ma, Jie [ORNL; May, Andrew F [ORNL; McGuire, Michael A [ORNL; Specht, Eliot D [ORNL

    2014-01-01

    The phonon dispersions and scattering rates of the thermoelectric material AgSbTe$_{2}$ were measured as a function of temperature with inelastic neutron scattering. The results show that phonon scattering rates are large and weakly dependent on temperature. The lattice thermal conductivity was calculated from the measured phonon lifetimes and group velocities, providing good agreement with bulk transport measurements. The measured phonon scattering rates and their temperature dependence are compared with models of phonon scattering by anharmonicity and point defect. We find that these processes cannot account for the large total phonon scattering rates observed, and their lack of temperature dependence. Neutron and synchrotron diffraction measurements on single crystals revealed an extensive nanostructure from cation ordering, which is likely responsible for the strong phonon scattering.

  1. Growth, steady-state, and time-resolved photoluminescence study of CdTe/MgCdTe double heterostructures on InSb substrates using molecular beam epitaxy

    SciTech Connect (OSTI)

    DiNezza, Michael J.; Liu, Shi; Kirk, Alexander P.; Zhang, Yong-Hang; School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287 ; Zhao, Xin-Hao; School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287

    2013-11-04

    CdTe/MgCdTe double heterostructures (DHs) are grown on InSb substrates using molecular beam epitaxy and reveal strong photoluminescence with over double the intensity of a GaAs/AlGaAs DH with an identical layer structure design grown on GaAs. Time-resolved photoluminescence of the CdTe/MgCdTe DH gives a Shockley-Read-Hall recombination lifetime of 86 ns, which is more than one order of magnitude longer than that of typical polycrystalline CdTe films. These findings indicate that monocrystalline CdTe/MgCdTe DHs effectively reduce surface recombination, have limited nonradiative interface recombination, and are promising for solar cells that could reach power conversion efficiencies similar to that of GaAs.

  2. Intrinsic Rashba-like splitting in asymmetric Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} heterogeneous topological insulator films

    SciTech Connect (OSTI)

    Liu, Xiaofei; Guo, Wanlin

    2014-08-25

    We show by density functional theory calculations that asymmetric hetero-stacking of Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} films can modulate the topological surface states. Due to the structure inversion asymmetry, an intrinsic Rashba-like splitting of the conical surface bands is aroused. While such splitting in homogeneous Bi{sub 2}Te{sub 3}-class topological insulators can be realized in films with more than three quintuple layers under external electric fields, the hetero-stacking breaks the limit of thickness for preserving the topological nature into the thinnest two quintuple layers. These results indicate that the hetero-stacking can serve as an efficient strategy for spin-resolved band engineering of topological insulators.

  3. Electrical performance of phase change memory cells with Ge{sub 3}Sb{sub 2}Te{sub 6} deposited by molecular beam epitaxy

    SciTech Connect (OSTI)

    Boschker, Jos E.; Riechert, Henning; Calarco, Raffaella; Boniardi, Mattia; Redaelli, Andrea

    2015-01-12

    Here, we report on the electrical characterization of phase change memory cells containing a Ge{sub 3}Sb{sub 2}Te{sub 6} (GST) alloy grown in its crystalline form by Molecular Beam Epitaxy (MBE). It is found that the high temperature growth on the amorphous substrate results in a polycrystalline film exhibiting a rough surface with a grain size of approximately 80150?nm. A detailed electrical characterization has been performed, including I-V characteristic curves, programming curves, set operation performance, crystallization activation at low temperature, and resistance drift, in order to determine the material related parameters. The results indicate very good alignment of the electrical parameters with the current state-of-the-art GST, deposited by physical vapor deposition. Such alignment enables a possible employment of the MBE deposition technique for chalcogenide materials in the phase change memory technology, thus leading to future studies of as-deposited crystalline chalcogenides as integrated in electrical vehicles.

  4. Intensity- and temperature- dependent carrier recombination in InAs/In(As1-xSbx) type-II superlattices

    SciTech Connect (OSTI)

    Olson, Benjamin Varberg; Kadlec, Emil Andrew; Kim, Jin K.; Klem, John F.; Hawkins, Samuel D.; Shaner, Eric A.; Flatte, Michael E.

    2015-04-17

    Our time-resolved measurements for carrier recombination are reported as a midwave infrared InAs/InAs0.66Sb0.34 type-II superlattice (T2SL) function of pump intensity and sample temperature. By including the T2SL doping level in the analysis, the Shockley-Read-Hall (SRH), radiative, and Auger recombination components of the carrier lifetime are uniquely distinguished at each temperature. SRH is the limiting recombination mechanism for excess carrier densities less than the doping level (the low-injection regime) and temperatures less than 175 K. A SRH defect energy of 95 meV, either below the T2SL conduction-band edge or above the T2SL valence-band edge, is identified. Auger recombination limits the carrier lifetimes for excess carrier densities greater than the doping level (the high-injection regime) for all temperatures tested. Additionally, at temperatures greater than 225 K, Auger recombination also limits the low-injection carrier lifetime due to the onset of the intrinsic temperature range and large intrinsic carrier densities. Radiative recombination is found to not have a significant contribution to the total lifetime for all temperatures and injection regimes, with the data implying a photon recycling factor of 15. Using the measured lifetime data, diffusion currents are calculated and compared to calculated Hg1-xCdxTe dark current, indicating that the T2SL can have a lower dark current with mitigation of the SRH defect states. Our results illustrate the potential for InAs/InAs1-xSbx T2SLs as absorbers in infrared photodetectors.

  5. Cr-doped Ge{sub 2}Sb{sub 2}Te{sub 5} for ultra-long data retention phase change memory

    SciTech Connect (OSTI)

    Wang, Qing; Xia, Yangyang; Zheng, Yonghui; Zhang, Qi; Liu, Bo Song, Sannian; Cheng, Yan; Song, Zhitang; Feng, Songlin; Huo, Ruru

    2015-11-30

    Phase change memory is regarded as one of the most promising candidates for the next-generation non-volatile memory. Its storage medium, phase change material, has attracted continuous exploration. Ge{sub 2}Sb{sub 2}Te{sub 5} (GST) is the most popular phase change material, but its thermal stability needs to be improved when used in some fields at high temperature (more than 120 °C). In this paper, we doped Cr atoms into GST and obtained Cr{sub 10}(Ge{sub 2}Sb{sub 2}Te{sub 5}){sub 90} (labeled as Cr-GST) with high thermal stability. For Cr-GST film, the sheet resistance ratio between amorphous and crystalline states is high up to 3 orders of magnitude. The crystalline Cr-GST film inherits the phase structure of GST, with metastable face-centered cubic phase and/or stable hexagonal phase. The doped Cr atoms not only bond with other atoms but also help to improve the anti-oxidation property of Cr-GST. As for the amorphous thermal stability, the calculated temperature for 10-year-data-retention of Cr-GST film, based on the Arrhenius equation, is about 180 °C. The threshold current and threshold voltage of a cell based on Cr-GST are about 6 μA and 2.7 V. The cell could be operated by suitable voltages for more than 40 000 cycles. Thus, Cr-GST is proved to be a promising phase change material with ultra-long data retention.

  6. On photo-expansion and microlens formation in (GeS{sub 2}){sub 0.74}(Sb{sub 2}S{sub 3}){sub 0.26} chalcogenide glass

    SciTech Connect (OSTI)

    Knotek, P.; Tichy, L.

    2012-12-15

    Graphical abstract: Display Omitted Highlights: ? Photo-expansion induced by sub-band-gap photons in GeSbS glass. ? One-step microlens formation. ? The topography of the microlenses detected by AFM and DHM. ? The good mechanical characteristics of the microlenses were obtained. ? Local light-induced overheating of the glass. -- Abstract: Photo-expansion of the bulk of (GeS{sub 2}){sub 0.74}(Sb{sub 2}S{sub 3}){sub 0.26} glass induced by sub-gap photons is studied employing specifically atomic force microscopy (AFM) namely an atomic force acoustic microscopy (AFAM) and a force spectroscopy and digital holographic microscopy. The results are discussed with respect to the possible role of light induced overheating in the process of photo-expansion.

  7. Enhancement of spin polarization via Fermi level tuning in Co{sub 2}MnSn{sub 1−x}Sb{sub x} (x = 0, 0.25. 0.5, 0.75, 1) Heusler alloys

    SciTech Connect (OSTI)

    Singh, Mukhtiyar Thakur, Jyoti; Kashyap, Manish K.; Saini, Hardev S.

    2014-04-24

    Full potential approach has been employed to tune Fermi level in Co{sub 2}MnSn{sub 1−x}Sb{sub x} (x = 0, 0.25, 0.5, 0.75, 1) Heulser alloys for enhancement of spin polarization and finding signature of half metallicity. Present density functional theory (DFT) based calculation indicates that stoichoimetric Heusler alloy, Co{sub 2}MnSn is not a half-metallic ferromagnet but the doping of Sb in it results in the shifting of E{sup F} in well-defined energy gap which leads the 100% spin polarization in the resultant alloys. The magnetism in present alloys is governed by localized moment on Mn atom mainly. The tuning of half-metallicity using doping can be proved as an ideal technique to search the new materials which can accomplish the need of spintronics.

  8. A high-pressure route to thermoelectrics with low thermal conductivity: The solid solution series AgIn{sub x}Sb{sub 1?x}Te{sub 2} (x=0.10.6)

    SciTech Connect (OSTI)

    Schrder, Thorsten; Rosenthal, Tobias; Souchay, Daniel; Petermayer, Christian; Grott, Sebastian; Scheidt, Ernst-Wilhelm; Gold, Christian; Scherer, Wolfgang; Oeckler, Oliver

    2013-10-15

    Metastable rocksalt-type phases of the solid solution series AgIn{sub x}Sb{sub 1?x}Te{sub 2} (x=0.1, 0.2, 0.4, 0.5 and 0.6) were prepared by high-pressure synthesis at 2.5 GPa and 400 C. In these structures, the coordination number of In{sup 3+} is six, in contrast to chalcopyrite ambient-pressure AgInTe{sub 2} with fourfold In{sup 3+} coordination. Transmission electron microscopy shows that real-structure phenomena and a certain degree of short-range order are present, yet not very pronounced. All three cations are statistically disordered. The high degree of disorder is probably the reason why AgIn{sub x}Sb{sub 1?x}Te{sub 2} samples with 0.4SbTe{sub 2} (? ?0.6 W/K m). The highest ZT value (0.15 at 300 K) is observed for AgIn{sub 0.5}Sb{sub 0.5}Te{sub 2}, mainly due to its high Seebeck coefficient of 160 V/K. Temperature-dependent X-ray powder patterns indicate that the solid solutions are metastable at ambient pressure. At 150 C, the quaternary compounds decompose into chalcopyrite-type AgInTe{sub 2} and rocksalt-type AgSbTe{sub 2}. - Graphical abstract: Reaction scheme, temperature characteristics of the ZT value and a selected-area electron diffraction pattern (background) of AgIn{sub 0.5}Sb{sub 0.5}Te{sub 2}, which crystallizes in a rocksalt-type structure with statistical cation disorder. Display Omitted - Highlights: High-pressure synthesis yields the novel solid solution series AgIn{sub x}Sb{sub 1?x}Te{sub 2}. In contrast to AgInTe{sub 2}, the compounds are inert at ambient pressure. HRTEM shows no pronounced short-range order in the disordered NaCl-type structure. The metastable phases exhibit very low total thermal conductivities <0.5 W/K m. ZT values of 0.15 at room temperature were

  9. Record figure of merit values of highly stoichiometric Sb2Te3 porous bulk synthesized from tailor-made molecular precursors in ionic liquids

    SciTech Connect (OSTI)

    Heimann, Stefan; Schulz, Stephan; Schaumann, Julian; Mudring, Anja; Stötzel, Julia; Maculewicz, Franziska; Schierning, Gabi

    2015-08-06

    We report on the synthesis of Sb2Te3 nanoparticles with record-high figure of merit values of up to 1.5. The central thermoelectric parameters, electrical conductivity, thermal conductivity and Seebeck coefficient, were independently optimized. Critical influence of porosity for the fabrication of highly efficient thermoelectric materials is firstly demonstrated, giving a strong guidance for the optimization of other thermoelectric materials.

  10. Synthesis, characterization and physical properties of the skutterudites Yb{sub x}Fe{sub 2}Ni{sub 2}Sb{sub 12} (0{<=}x{<=}0.4)

    SciTech Connect (OSTI)

    Kaltzoglou, Andreas; Vaqueiro, Paz; Knight, Kevin S.; Powell, Anthony V.

    2012-09-15

    The skutterudites Yb{sub x}Fe{sub 2}Ni{sub 2}Sb{sub 12} (0{<=}x{<=}0.4) have been prepared by solid-state reaction and characterised by powder X-ray diffraction. The compounds crystallise in the cubic space group Im3{sup Macron} (a Almost-Equal-To 9.1 A) with Yb atoms partially filling the voids in the skutterudite framework. A neutron time-of-flight diffraction experiment for Fe{sub 2}Ni{sub 2}Sb{sub 12} confirms the disorder of Fe and Ni atoms on the transition-metal site. Electrical resistivity, Seebeck coefficient and thermal conductivity measurements indicate that the thermoelectric performance of the skutterudites shows a marked dependence on the Yb content. Magnetic measurements over the temperature range 2{<=}T/K{<=}300 show paramagnetic behaviour for all compounds. Decomposition studies under an oxidising atmosphere at elevated temperatures have also been carried out by thermogravimetric analysis. - Graphical abstract: The filled skutterudites Yb{sub x}Fe{sub 2}Ni{sub 2}Sb{sub 12} have been prepared by solid-state reaction and characterised by powder X-ray diffraction. The thermoelectric performance depends strongly on the Yb content. The physical properties and thermal stability of the compounds are further discussed in comparison with the current state-of-the art thermoelectric skutterudites. Highlights: Black-Right-Pointing-Pointer A new series of skutterudites has been prepared and characterised. Black-Right-Pointing-Pointer Physical properties are affected by the degree of Yb filling. Black-Right-Pointing-Pointer The highest thermoelectric performance is found for Yb{sub 0.15}Fe{sub 2}Ni{sub 2}Sb{sub 12}. Black-Right-Pointing-Pointer The skutterudites decompose in air above 550 K.

  11. Substitution effect on magnetic and electrical properties of half-Heusler alloy Ni{sub 1−x}Co{sub x}Mn{sub 1−y}Fe{sub y}Sb

    SciTech Connect (OSTI)

    Kushwaha, Varun Sharma, Himanshu Dixit, Dinesh Tomy, C. V.; Tulapurkar, Ashwin

    2014-04-24

    We have studied the effects of Co and Fe doping on the magnetic and electrical properties of half-Heusler compound NiMnSb. The alloys were prepared by arc-melting method in the presence of Argon gas. The powder X-ray diffraction of the each alloy was performed in air at room temperature. The magnetic and electrical properties were performed in the temperature range 2–400 K and in magnetic field up to 1 T.

  12. Construction integrity assessment report (ETN-98-0005) S-Farm overground transfer (OGT) system valve pit 241-S-B to valve pit 241-S-D

    SciTech Connect (OSTI)

    HICKS, D.F.

    1999-08-12

    The S-Farm overground transfer (OGT) line will bypass the existing line(s), between valve pits 241-S-B and 241-S-D that no longer meet system requirements. The new OGT line will provide a waste transfer pipeline between these valve pits in support of saltwell pumping activities. The length of the OGT line is approximately 180 ft from pit to pit. The primary pipe is nominal 1-in. diameter stainless steel (SST) braided Ethylene-propylene Diene Monomer (EPDM) hose. The encasement pipe is a nominal 3-in., flanged, SST pipe made up of several different length pipe spool pieces (drawing H-2-829564, sh. 1 and sh. 2). The OGT line slopes from valve pit 241-S-B toward valve pit 241-S-D. At each end, the primary and encasement pipe connect to a pit entry spool piece. The pit entry spool pieces are constructed of prefabricated SST materials. These spool pieces allow for the separation of the primary and encasement pipelines after the pipes have entered the valve pits (drawing H-2-818280, sh. 2). The pit entry spool pieces also allow for leak detection of the encasement pipe at each end (drawing H-2-829564, sh. 2). The OGT encasement pipeline is supported above ground by adjustable height unistrut brackets and precast concrete bases (drawing H-2-829654, sh. 1). The pipeline is heat-traced and insulated. The heat tracing and insulation supply and retain latent heat that prevents waste solidification during transfers and provides freeze protection. The total length of the pipeline is above ground, thereby negating the need for cathodic corrosion protection. This Construction Integrity Assessment Report (CIAR) is prepared by Fluor Daniel Northwest for Numatec Hanford Corporation/Lockheed Martin Hanford Corporation, the operations contractor, and the U. S. Department of Energy, the system owner. The CIAR is intended to verify that construction was performed in accordance with the provisions of Washington Administrative Code, WAC-173-303-640 (3) (c), (e), (f) and (h).

  13. GaSb molecular beam epitaxial growth on p-InP(001) and passivation with in situ deposited Al{sub 2}O{sub 3} gate oxide

    SciTech Connect (OSTI)

    Merckling, C.; Brammertz, G.; Hoffmann, T. Y.; Caymax, M.; Dekoster, J.; Sun, X.; Alian, A.; Heyns, M.; Afanas'ev, V. V.

    2011-04-01

    The integration of high carrier mobility materials into future CMOS generations is presently being studied in order to increase drive current capability and to decrease power consumption in future generation CMOS devices. If III-V materials are the candidates of choice for n-type channel devices, antimonide-based semiconductors present high hole mobility and could be used for p-type channel devices. In this work we first demonstrate the heteroepitaxy of fully relaxed GaSb epilayers on InP(001) substrates. In a second part, the properties of the Al{sub 2}O{sub 3}/GaSb interface have been studied by in situ deposition of an Al{sub 2}O{sub 3} high-{kappa} gate dielectric. The interface is abrupt without any substantial interfacial layer, and is characterized by high conduction and valence band offsets. Finally, MOS capacitors show well-behaved C-V with relatively low D{sub it} along the bandgap, these results point out an efficient electrical passivation of the Al{sub 2}O{sub 3}/GaSb interface.

  14. Electrical and physical characterization of the Al{sub 2}O{sub 3}/p-GaSb interface for 1%, 5%, 10%, and 22% (NH{sub 4}){sub 2}S surface treatments

    SciTech Connect (OSTI)

    Peralagu, Uthayasankaran Thayne, Iain G.; Povey, Ian M.; Carolan, Patrick; Lin, Jun; Hurley, Paul K.; Contreras-Guerrero, Rocio; Droopad, Ravi

    2014-10-20

    In this work, the impact of ammonium sulfide ((NH{sub 4}){sub 2}S) surface treatment on the electrical passivation of the Al{sub 2}O{sub 3}/p-GaSb interface is studied for varying sulfide concentrations. Prior to atomic layer deposition of Al{sub 2}O{sub 3}, GaSb surfaces were treated in 1%, 5%, 10%, and 22% (NH{sub 4}){sub 2}S solutions for 10 min at 295 K. The smallest stretch-out and flatband voltage shifts coupled with the largest capacitance swing, as indicated by capacitance-voltage (CV) measurements, were obtained for the 1% treatment. The resulting interface defect trap density (D{sub it}) distribution showed a minimum value of 4 × 10{sup 12 }cm{sup −2}eV{sup −1} at E{sub v} + 0.27 eV. Transmission electron microscopy and atomic force microscopy examination revealed the formation of interfacial layers and increased roughness at the Al{sub 2}O{sub 3}/p-GaSb interface of samples treated with 10% and 22% (NH{sub 4}){sub 2}S. In combination, these effects degrade the interface quality as reflected in the CV characteristics.

  15. Phonon renormalization and Raman spectral evolution through amorphous to crystalline transitions in Sb{sub 2}Te{sub 3} thin films

    SciTech Connect (OSTI)

    Secor, Jeff; Zhao, Lukas; Krusin-Elbaum, Lia; Harris, Matt A.; Deng, Haiming; Raoux, Simone

    2014-06-02

    A symmetry specific phonon mode renormalization is observed across an amorphous to crystalline phase transformation in thin films of the topological material Sb{sub 2}Te{sub 3} using Raman spectroscopy. We present evidence for local crystalline symmetry in the amorphous state, eventhough, the q = 0 Raman selection rule is broken due to strong structural disorder. At crystallization, the in-plane polarized (E{sub g}{sup 2}) mode abruptly sharpens while the out-of-plane polarized (A{sub 1g}) modes are only weakly effected. This effect unique to the E{sub g} symmetry is exceptional considering that polarized spectra and comparison of the single phonon density of states between the amorphous and crystalline phases suggest that short range order of the amorphous phase is, on the average, similar to that of the crystalline material while electrical transport measurements reveal a sharp insulator-to-metal transition. Our findings point to the important role of anisotropic disorder affecting potential applications of topological and phase-change based electronics.

  16. Surface collective modes in the topological insulators Bi2Se3 and Bi0.5Sb1.5Te3-xSex

    DOE PAGES-Beta [OSTI]

    Kogar, A.; Gu, G.; Vig, S.; Thaler, A.; Wong, M. H.; Xiao, Y.; Reig-i-Plessis, D.; Cho, G. Y.; Valla, T.; Pan, Z.; et al

    2015-12-15

    In this study, we used low-energy, momentum-resolved inelastic electron scattering to study surface collective modes of the three-dimensional topological insulators Bi2Se3 and Bi0.5Sb1.5Te3-xSex. Our goal was to identify the “spin plasmon” predicted by Raghu and co-workers [Phys. Rev. Lett. 104, 116401 (2010)]. Instead, we found that the primary collective mode is a surface plasmon arising from the bulk, free carriers in these materials. This excitation dominates the spectral weight in the bosonic function of the surface χ''(q,ω) at THz energy scales, and is the most likely origin of a quasiparticle dispersion kink observed in previous photoemission experiments. Our study suggestsmore » that the spin plasmon may mix with this other surface mode, calling for a more nuanced understanding of optical experiments in which the spin plasmon is reported to play a role.« less

  17. Electrical modeling of InAs/GaSb superlattice mid-wavelength infrared pin photodiode to analyze experimental dark current characteristics

    SciTech Connect (OSTI)

    Delmas, Marie; Rodriguez, Jean-Baptiste; Christol, Philippe

    2014-09-21

    Dark current characteristics of 7 Monolayers (ML) InAs/ 4 ML GaSb SL pin photodiodes are simulated using ATLAS software. Using appropriate models and material parameters, we obtain good agreement between the simulated and the experimental dark current curves of photodiodes grown by molecular beam epitaxy. The n-type non-intentionally-doped (nid) SL samples exhibit a dependence of the lifetime with temperature following the T{sup -1/2} law, signature of Shockley-Read-Hall (SRH) Generation-Recombination current. We also studied the dependence of the dark current with the absorber doping level. It appears that the absorber doping level must not exceed a value of 2×10¹⁵cm⁻³, above this value the dark current is increasing with increased doping level. However for this doping value, a dark current as low as 5 × 10⁻⁹ A/cm², at 50 mV reverse bias at 77 K can be obtained.

  18. Assessment of RELAP5/MOD3.1 with the LSTF SB-SG-06 experiment simulating a steam generator tube rupture transient

    SciTech Connect (OSTI)

    Seul, K.W.; Bang, Y.S.; Lee, S.; Kim, H.J.

    1996-09-01

    The objective of the present work is to identify the predictability of RELAP5/MOD3.1 regarding thermal-hydraulic behavior during a steam generator tube rupture (SGTR). To evaluate the computed results, LSTF SB-SG-06 test data simulating the SGTR that occurred at the Mihama Unit 2 in 1991 are used. Also, some sensitivity studies of the code change in RELAP5, the break simulation model, and the break valve discharge coefficient are performed. The calculation results indicate that the RELAP5/MOD3.1 code predicted well the sequence of events and the major phenomena during the transient, such as the asymmetric loop behavior, reactor coolant system (RCS) cooldown and heat transfer by natural circulation, the primary and secondary system depressurization by the pressurizer auxiliary spray and the steam dump using the intact loop steam generator (SG) relief valve, and so on. However, there are some differences from the experimental data in the number of the relief valve cycling in the affected SG, and the flow regime of the hot leg with the pressurizer, and the break flow rates. Finally, the calculation also indicates that the coolant in the core could remain in a subcooled state as a result of the heat transfer caused by the natural circulation flow even if the reactor coolant pumps (RCPs) turned off and that the affected SG could be properly isolated to minimize the radiological release after the SGTR.

  19. Imaging dirac-mass disorder from magnetic dopant-atoms in the ferromagnetic topological insulator Crx(Bi?.?Sb?.?)??xTe?

    DOE PAGES-Beta [OSTI]

    Lee, Inhee; Kim, Chung Koo; Lee, Jinho; Billinge, Simon J. L.; Zhong, Ruidan D.; Schneeloch, John A.; Liu, Tiansheng S.; Valla, Tonica; Tranquada, John M.; Gu, Genda; et al

    2015-01-20

    To achieve and use the most exotic electronic phenomena predicted for the surface states of 3D topological insulators (TIs), it is necessary to open a Dirac-mass gap in their spectrum by breaking time-reversal symmetry. Use of magnetic dopant atoms to generate a ferromagnetic state is the most widely applied approach. However, it is unknown how the spatial arrangements of the magnetic dopant atoms influence the Dirac-mass gap at the atomic scale or, conversely, whether the ferromagnetic interactions between dopant atoms are influenced by the topological surface states. Here we image the locations of the magnetic (Cr) dopant atoms in themoreferromagnetic TI Cr?.??(Bi?.?Sb?.?)?.??Te?. Simultaneous visualization of the Dirac-mass gap ?(r) reveals its intense disorder, which we demonstrate is directly related to fluctuations in n(r), the Cr atom areal density in the termination layer. We find the relationship of surface-state Fermi wavevectors to the anisotropic structure of ?(r) not inconsistent with predictions for surface ferromagnetism mediated by those states. Moreover, despite the intense Dirac-mass disorder, the anticipated relationship ?(r)?n(r) is confirmed throughout and exhibits an electrondopant interaction energy J* = 145 meVnm. These observations reveal how magnetic dopant atoms actually generate the TI mass gap locally and that, to achieve the novel physics expected of time-reversal symmetry breaking TI materials, control of the resulting Dirac-mass gap disorder will be essential.less

  20. Cooling effect of nanoscale Bi2Te3/Sb2Te3 multilayered thermoelectric thin films

    SciTech Connect (OSTI)

    Hines, Mardecial; Lenhardt, Joshua; Lu, Ming; Jiang, Li; Xiao, Zhigang

    2012-01-01

    Managing high heat flux is one of the greatest technical challenges the integrated circuit (IC) industry is facing because the rising temperature limits device minimization and decreases its lifetime. In this paper, we report the characterization of the cooling effect of nanoscale Bi2Te3/Sb2Te3 multilayered thin films. The multilayerthin film was prepared with e-beam evaporation, and had 21 layers (5-nm-thick each layer and 105-nm-thick total). A thermoelectric device of the multilayerfilm, which is sandwiched between a diode temperature sensor and a platinum temperature sensor, was fabricated to measure the cooling effect. A maximum cooling temperature difference of about 3K was obtained from the film at an applied dc electrical current of 5 mA. The nanoscale multilayerfilm could be integrated in the IC devices for the application of high-efficiency thermoelectric solid-state cooling.

  1. Evidence for a defect level above the conduction band edge of InAs/InAsSb type-II superlattices for applications in efficient infrared photodetectors

    SciTech Connect (OSTI)

    Prins, A. D.; Lewis, M. K.; Bushell, Z. L.; Sweeney, S. J.; Liu, S.; Zhang, Y.-H.

    2015-04-27

    We report pressure-dependent photoluminescence (PL) experiments under hydrostatic pressures up to 2.16?GPa on a mid-wave infrared InAs/InAs{sub 0.86}Sb{sub 0.14} type-II superlattice (T2SL) structure at different pump laser excitation powers and sample temperatures. The pressure coefficient of the T2SL transition was found to be 93??2?meVGPa{sup ?1}. The integrated PL intensity increases with pressure up to 1.9?GPa then quenches rapidly indicating a pressure induced level crossing with the conduction band states at ?2?GPa. Analysis of the PL intensity as a function of excitation power at 0, 0.42, 1.87, and 2.16?GPa shows a clear change in the dominant photo-generated carrier recombination mechanism from radiative to defect related. From these data, evidence for a defect level situated at 0.18??0.01?eV above the conduction band edge of InAs at ambient pressure is presented. This assumes a pressure-dependent energy shift of ?11?meVGPa{sup ?1} for the valence band edge and that the defect level is insensitive to pressure, both of which are supported by an Arrhenius activation energy analysis.

  2. Electrical and thermal properties of Fe substituted double-filled Ba{sub x}Yb{sub y}Fe{sub z}Co{sub 4-z}Sb{sub 12} skutterudites

    SciTech Connect (OSTI)

    Ballikaya, Sedat; Uzar, Neslihan; Yildirim, Saffettin; Salvador, James R.

    2013-01-15

    Fe-substituted double-filled Ba{sub x}Yb{sub y}Fe{sub z}Co{sub 4-z}Sb{sub 12} (x=0.1, y=0.2 and z=0.0-0.4 nominal) compounds were synthesized using a melting-annealing-spark plasma sintering (SPS) method. Their thermoelectric properties were assessed by measuring the Seebeck coefficient, electrical conductivity, thermal conductivity and the Hall coefficient. The sign of the Hall coefficient indicates that electrons are the dominant carriers in all compounds except Ba{sub 0.1}Yb{sub 0.2}Fe{sub 0.4}Co{sub 3.6}Sb{sub 12}. The temperature dependence of the electrical conductivity and the carrier concentration reflect the transition from extrinsic to intrinsic behavior depending on the amount of Fe substituted for Co. Jonker and Ioffe analyses are applied to Fe-substituted double-filled Ba{sub x}Yb{sub y}Fe{sub z}Co{sub 4-z}Sb{sub 12} compounds in order to evaluate the range of minimum and maximum power factors achievable in n-type filled skutterudite compounds at room temperature (300 K). The predicted maximum room temperature power factor values in the range of 15-45 {mu}W/K{sup 2} cm are comparable to experimentally reported values of n-type skutterudite compounds. - Graphical abstract: Room temperature Jonker plot of Ba{sub x}Yb{sub y}Fe{sub z}Co{sub 4-z}Sb{sub 12} samples. Highlights: Black-Right-Pointing-Pointer The TE properties of Ba{sub x}Yb{sub y}Fe{sub z}Co{sub 4-z}Sb{sub 12} compounds were investigated. Black-Right-Pointing-Pointer Jonker and Ioffe analysis applied in order to predict the range of power factor achievable at room temperature. Black-Right-Pointing-Pointer The thermal conductivity is strongly suppressed with increasing of Fe substitution on Co site. Black-Right-Pointing-Pointer We see that small quantities of Fe on Co site is beneficial on enhancement ZT value.

  3. Synthesis, crystal structures, and physical properties of the new Zintl phases A{sub 21}Zn{sub 4}Pn{sub 18} (A=Ca, Eu; Pn=As, Sb)—Versatile arrangements of [ZnPn{sub 4}] tetrahedra

    SciTech Connect (OSTI)

    Suen, Nian-Tzu; Wang, Yi; Bobev, Svilen

    2015-07-15

    Four new Zintl phases, Ca{sub 21}Zn{sub 4}As{sub 18}, Ca{sub 21}Zn{sub 4}Sb{sub 18}, Eu{sub 21}Zn{sub 4}As{sub 18} and Eu{sub 21}Zn{sub 4}Sb{sub 18} have been synthesized by metal flux reactions. Their structures have been established from single-crystal X-ray diffraction. Despite the similar chemical makeup and the identical formulae, the structures of the four compounds are not the same—Ca{sub 21}Zn{sub 4}As{sub 18}, Ca{sub 21}Zn{sub 4}Sb{sub 18} and Eu{sub 21}Zn{sub 4}As{sub 18} crystallize in the monoclinic space group C2/m (No. 12, Z=4) with the β-Ca{sub 21}Mn{sub 4}Sb{sub 18} structure type, while Eu{sub 21}Zn{sub 4}Sb{sub 18} adopts the Ba{sub 21}Cd{sub 4}Sb{sub 18} structure type with the orthorhombic space group Cmce (No. 64, Z=8). Both structures are based on ZnAs{sub 4} or ZnSb{sub 4} tetrahedra, linked in slightly different ways, and Ca{sup 2+} and Eu{sup 2+} cations that fill the space between them. The structural relationships between the title compounds and other known ternary phases with intricate structures are discussed. Electrical resistivity measurement on single-crystalline Eu{sub 21}Zn{sub 4}Sb{sub 18} suggests an intrinsic semiconductor behavior with a band gap of ca. 0.2 eV. The temperature dependent DC magnetization measurement on the same material indicates Curie–Weiss paramagnetism in the high-temperature regime, and a spontaneous antiferromagnetic ordering below 8 K. The calculated effective moments of Eu confirm the divalent Eu{sup 2+} ground state, as expected from the Zintl–Klemm concept. - Graphical abstract: The four new Zintl phases—Ca{sub 21}Zn{sub 4}As{sub 18}, Ca{sub 21}Zn{sub 4}Sb{sub 18}, Eu{sub 21}Zn{sub 4}As{sub 18}, and Eu{sub 21}Zn{sub 4}Sb{sub 18}—crystallize in two structure types, showing the versatility in the arrangements of ZnAs{sub 4} and ZnSb{sub 4} tetrahedra. - Highlights: • Ca{sub 21}Zn{sub 4}As{sub 18}, Ca{sub 21}Zn{sub 4}Sb{sub 18}, Eu{sub 21}Zn{sub 4}As{sub 18}, and Eu{sub 21}Zn{sub 4}Sb{sub 18

  4. Syntheses, structure and rare earth metal photoluminescence of new and known isostructural A{sub 2}Mo{sub 4}Sb{sub 2}O{sub 18} (A=Ce, Pr, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu) compounds

    SciTech Connect (OSTI)

    Mohitkar, Shrikant A.; Kalpana, G.; Vidyasagar, K.

    2011-04-15

    Nine new A{sub 2}Mo{sub 4}Sb{sub 2}O{sub 18} (A=Ce, Pr, Eu, Tb, Ho, Er, Tm, Yb, Lu) compounds have been synthesized by solid-state reactions. They are isostructural with six reported analogues of yttrium and other lanthanides and the monoclinic unit cell parameters of all fifteen of them vary linearly with the size of A{sup 3+} ion. Single crystal X-ray structures of eight A{sub 2}Mo{sub 4}Sb{sub 2}O{sub 18} (A=Ce, Pr, Eu, Gd, Tb, Ho, Er, Tm) compounds have been determined. Neat A{sub 2}Mo{sub 4}Sb{sub 2}O{sub 18} (A=Pr, Sm, Eu, Tb, Dy, Ho, Er, Tm) compounds exhibit characteristic rare earth metal photoluminescence. -- Graphical abstract: Among the fifteen isostructural A{sub 2}Mo{sub 4}Sb{sub 2}O{sub 18} (A=rare earth metal) molybdoantimonites, eight (A=Pr, Sm, Eu, Tb, Dy, Ho, Er, Tm) compounds exhibit neat characteristic lanthanide photoluminescence in the 200-800 nm range at room temperature. Display Omitted Research highlights: {yields} Syntheses of nine new A{sub 2}Mo{sub 4}Sb{sub 2}O{sub 18} (A=Ce, Pr, Eu, Tb, Ho, Er, Tm, Yb, Lu) compounds. {yields} X-ray structures of eight A{sub 2}Mo{sub 4}Sb{sub 2}O{sub 18} (A=Ce, Pr, Eu, Gd, Tb, Ho, Er, Tm) compounds. {yields} Photoluminescence of neat A{sub 2}Mo{sub 4}Sb{sub 2}O{sub 18} (A=Pr, Sm, Eu, Tb, Dy, Ho, Er, Tm) compounds.

  5. DEMONSTRATION OF THE DWPF FLOWSHEET IN THE SRNL SHIELDED CELLS USING ARP PRODUCT SIMULANT AND SB4 TANK 40 SLUDGE SLURRY

    SciTech Connect (OSTI)

    Lambert, D; John Pareizs, J; Bradley Pickenheim, B; Cj Bannochie, C; Michael Stone, M; Damon Click, D; Erich Hansen, E; Kim Crapse, K; David Hobbs, D

    2008-05-14

    The radioactive startup of two new SRS processing facilities, the Actinide Removal Process (ARP) and the Modular Caustic-Side-Solvent-Extraction Unit (MCU) will add two new waste streams to the Defense Waste Processing Facility (DWPF). The ARP will remove actinides from the 5.6 M salt solution resulting in a sludge-like product that is roughly half monosodium titanate (MST) insoluble solids and half sludge insoluble solids. The ARP product will be added to the Sludge Receipt and Adjustment Tank (SRAT) at boiling and dewatered prior to pulling a SRAT receipt sample. The cesium rich MCU stream will be added to the SRAT at boiling after both formic and nitric acid have been added and the SRAT contents concentrated to the appropriate endpoint. A concern was raised by an external hydrogen review panel that the actinide loaded MST could act as a catalyst for hydrogen generation (Mar 15, 2007 report, Recommendation 9). Hydrogen generation, and it's potential to form a flammable mixture in the off-gas, under SRAT and Slurry Mix Evaporator (SME) processing conditions has been a concern since the discovery that noble metals catalyze the decomposition of formic acid. Radiolysis of water also generates hydrogen, but the radiolysis rate is orders of magnitude lower than the noble metal catalyzed generation. As a result of the concern raised by the external hydrogen review panel, hydrogen generation was a prime consideration in this experiment. Testing was designed to determine whether the presence of the irradiated ARP simulant containing MST caused uncontrolled or unexpected hydrogen production during experiments simulating the DWPF Chemical Process Cell (CPC) due to activation of titanium. A Shielded Cells experiment, SC-5, was completed using SB4 sludge from Tank 405 combined with an ARP product produced from simulants by SRNL researchers. The blend of sludge and MST was designed to be prototypic of planned DWPF SRAT and SME cycles. As glass quality was not an objective in

  6. Crystal structure of fluorite-related Ln{sub 3}SbO{sub 7} (Ln=LaDy) ceramics studied by synchrotron X-ray diffraction and Raman scattering

    SciTech Connect (OSTI)

    Siqueira, K.P.F.; Borges, R.M.; Granado, E.; Malard, L.M.; Paula, A.M. de; Moreira, R.L.; Bittar, E.M.; Dias, A.

    2013-07-15

    Ln{sub 3}SbO{sub 7} (Ln=La, Pr, Nd, Sm, Eu, Gd, Tb and Dy) ceramics were synthesized by solid-state reaction in optimized conditions of temperature and time to yield single-phase ceramics. The crystal structures of the obtained ceramics were investigated by synchrotron X-ray diffraction, second harmonic generation (SHG) and Raman scattering. All samples exhibited fluorite-type orthorhombic structures with different oxygen arrangements as a function of the ionic radius of the lanthanide metal. For ceramics with the largest ionic radii (LaNd), the ceramics crystallized into the Cmcm space group, while the ceramics with intermediate and smallest ionic radii (SmDy) exhibited a different crystal structure belonging to the same space group, described under the Ccmm setting. The results from SHG and Raman scattering confirmed these settings and ruled out any possibility for the non-centrosymmetric C222{sub 1} space group describing the structure of the small ionic radii ceramics, solving a recent controversy in the literature. Besides, the Raman modes for all samples are reported for the first time, showing characteristic features for each group of samples. - Graphical abstract: Raman spectrum for La{sub 3}SbO{sub 7} ceramics showing their 22 phonon modes adjusted through Lorentzian lines. According to synchrotron X-ray diffraction and Raman scattering, this material belongs to the space group Cmcm. - Highlights: Ln{sub 3}SbO{sub 7} ceramics belonging to the space groups Cmcm and Ccmm are synthesized. SXRD, SHG and Raman scattering confirmed the orthorhombic structures. Ccmm instead of C222{sub 1} is the correct one based on SHG and Raman data.

  7. Synthesis and structural and magnetic characterization of the frustrated magnetic system La{sub 2}Ni{sub 4/3?x}Co{sub x}Sb{sub 2/3}O{sub 6}

    SciTech Connect (OSTI)

    Franco, D.G.; Carbonio, R.E.; Nieva, G.

    2013-11-15

    We report the synthesis of double perovskites La{sub 2}Ni{sub 4/3?x}Co{sub x}Sb{sub 2/3}O{sub 6} with x=0, 1/3, 2/3 and 1 by a solid state method. Rietveld refinements of X-ray and neutron powder diffraction data show that all samples crystallize in space group P2{sub 1}/n, with almost perfect occupation of the 2d octahedral site with the transition metals, while all Sb{sup 5+} are randomly distributed in a 2c octahedral site. The saturation magnetization in hysteresis loops indicates that the samples are ferrimagnetic throughout all the series. Virgin magnetization curves lie outside hysteresis loops at low temperatures and thermal evolution of H{sub m} defined as the inflection point of these curves follows the de AlmeidaThouless dependence for x?0. This spin glass like behavior below 30 K is also supported by thermal evolution of the coercivity, which follows an exponential law typical of magnetic clusters, not found in the pure Ni{sup 2+} perovskite, x=0 extreme. - Graphical abstract: Display Omitted - Author-Highlights: We synthesized new double perovskites: La{sub 2}Ni{sub 4/3?x}Co{sub x}SbO{sub 6} (x=1/3, 2/3, 1). The cations occupying octahedral sites are highly ordered in all samples. Magnetic transition occurs as a consequence of superexchange paths. Frustration is found and attributed to competition between different interactions.

  8. Structural study by X-ray diffraction and transmission electron microscopy of the misfit compound (SbS{sub 1-x}Se{sub x}){sub 1.16}(Nb{sub 1.036}S{sub 2}){sub 2}

    SciTech Connect (OSTI)

    Kars, Mohammed; Fredrickson, Daniel C.; Gomez-Herrero, A.; Lidin, Sven; Rebbah, Allaoua; Otero-Diaz, L.C.; Dpto. Inorganica, Fac. C.C. Quimicas, Universidad Complutense, 28040 Madrid

    2010-08-15

    In the Sb-Nb-S-Se system, a new misfit layer compound (MSL) has been synthesized and its structure was determined by combining single crystal X-ray diffraction (XRD) and transmission electron microscopy (TEM) techniques. It presents a composite crystal structure formed by (SbS{sub 1-x}Se{sub x}) slabs stacking alternately with double NbS{sub 2} layers and both can be treated as separate monoclinic subsystems. The (SbS{sub 1-x}Se{sub x}) slabs comprise a distorted, two-atom-thick layer with NaCl-type structure formed by an array of {l_brace}SbX{sub 5}{r_brace} square pyramids joined by edges (X: S, Se); the NbS{sub 2} layers consist of {l_brace}NbS{sub 6}{r_brace} trigonal prisms linked through edge-sharing to form sheets, just as in the 2H-NbS{sub 2} structure type. Both sublattices have the same lattice parameters a = 5.7672(19) A, c = 17.618(6) A and {beta} = 96.18(3){sup o}, with incommensurability occurring along the b direction: b{sub 1} = 3.3442(13) A for the NbS{sub 2} subsystem and b{sub 2} = 2.8755(13) A for the (SbS{sub 1-x}Se{sub x}) subsystem. The occurrence of diffuse scattering intensity streaked along c{sup *} indicates that the (SbS{sub 1-x}Se{sub x}) subsystem is subjected to extended defects along the stacking direction.

  9. Spin glass transitions in the absence of chemical disorder for the pyrochlores A{sub 2}Sb{sub 2}O{sub 7} (A=Mn, Co, Ni)

    SciTech Connect (OSTI)

    Zhou, H.D.; Wiebe, C.R.; Janik, J.A.; Vogt, B.; Harter, A.; Dalal, N.S.; Gardner, J.S.

    2010-04-15

    The pyrochlores in the series A{sub 2}Sb{sub 2}O{sub 7} have been synthesized and characterized as exhibiting spin glass transitions at T{sub SG}=41, 4.5, and 2.6 K (for A=Mn{sup 2+}S=5/2 , Co{sup 2+}S=3/2 and Ni{sup 2+}S=1, respectively) despite the lack of chemical disorder. Since the Curie-Weiss temperature remains essentially constant for all members in the series ({theta}{approx}-40K), the frustration index for these materials increases significantly as the moment size is reduced from f=|theta|/T{sub SG}=1.1 (Mn{sup 2+}), to 9.3 (Co{sup 2+}) to 14.6 (Ni{sup 2+}). There is also a corresponding change in the spin dynamics measured by the shift in the AC susceptibility signal as a function of frequency. These new materials provide an avenue to investigate the effect of quantum fluctuations on the Heisenberg pyrochlore lattice in the low spin limit, and show there is a dramatic change in the spin dynamics as the quantum regime is approached. - A comparison of the spin glass ordering temperature, T{sub SG}, and the frustration index f as a function of the spin for the pyrochlore series A{sub 2}Sb{sub 2}O{sub 7}. In the limit of low spin, the frustration index increases by an order of magnitude.

  10. Structural, electrical, and thermoelectrical properties of (Bi{sub 1-x}Sb{sub x}){sub 2}Se{sub 3} alloys prepared by a conventional melting technique

    SciTech Connect (OSTI)

    Shokr, E. Kh.; Ibrahim, E. M. M. Abdel Hakeem, A. M.; Adam, A. M.

    2013-01-15

    Polycrystalline solid solutions of (Bi{sub 1-x}Sb{sub x}){sub 2}Se{sub 3} (x = 0, 0.025, 0.050, 0.075, 0.100) were prepared using a facile method based on the conventional melting technique followed by annealing process. X-ray analysis and Raman spectroscopical measurements revealed formation of Bi{sub 2}Se{sub 3} in single phase. The electrical and thermoelectric properties have been studied on the bulk samples in the temperature range 100-420 K. The electrical conductivity measurements show that the activation energy and room-temperature electrical conductivity dependences on the Sb content respectively exhibit minimum and maximum values at x = 0.05. The thermoelectric power exhibited a maximum value near the room temperature suggesting promising materials for room-temperature applications. The highest power factor value was found to be 13.53 {mu}W K{sup -2} cm{sup -1} and recorded for the x = 0.05 compound.

  11. Ordered and disordered polymorphs of Na(Ni2/3Sb1/3)O₂: Honeycomb-ordered cathodes for Na-ion batteries

    SciTech Connect (OSTI)

    Ma, Jeffrey; Wu, Lijun; Bo, Shou -Hang; Khalifah, Peter G.; Grey, Clare P.; Zhu, Yimei

    2015-04-14

    Na-ion batteries are appealing alternatives to Li-ion battery systems for large-scale energy storage applications in which elemental cost and abundance are important. Although it is difficult to find Na-ion batteries which achieve substantial specific capacities at voltages above 3 V (vs Na⁺/Na), the honeycomb-layered compound Na(Ni2/3Sb1/3)O₂ can deliver up to 130 mAh/g of capacity at voltages above 3 V with this capacity concentrated in plateaus at 3.27 and 3.64 V. Comprehensive crystallographic studies have been carried out in order to understand the role of disorder in this system which can be prepared in both “disordered” and “ordered” forms, depending on the synthesis conditions. The average structure of Na(Ni2/3Sb1/3)O₂ is always found to adopt an O3-type stacking sequence, though different structures for the disordered (R3¯m, #166, a = b = 3.06253(3) Å and c = 16.05192(7) Å) and ordered variants (C2/m, #12, a = 5.30458(1) Å, b = 9.18432(1) Å, c = 5.62742(1) Å and β = 108.2797(2)°) are demonstrated through the combined Rietveld refinement of synchrotron X-ray and time-of-flight neutron powder diffraction data. However, pair distribution function studies find that the local structure of disordered Na(Ni2/3Sb1/3)O₂ is more correctly described using the honeycomb-ordered structural model, and solid state NMR studies confirm that the well-developed honeycomb ordering of Ni and Sb cations within the transition metal layers is indistinguishable from that of the ordered phase. The disorder is instead found to mainly occur perpendicular to the honeycomb layers with an observed coherence length of not much more than 1 nm seen in electron diffraction studies. When the Na environment is probed through ²³Na solid state NMR, no evidence is found for prismatic Na environments, and a bulk diffraction analysis finds no evidence

  12. Ordered and disordered polymorphs of Na(Ni2/3Sb1/3)O?: Honeycomb-ordered cathodes for Na-ion batteries

    SciTech Connect (OSTI)

    Ma, Jeffrey; Wu, Lijun; Bo, Shou -Hang; Khalifah, Peter G.; Grey, Clare P.; Zhu, Yimei

    2015-04-14

    Na-ion batteries are appealing alternatives to Li-ion battery systems for large-scale energy storage applications in which elemental cost and abundance are important. Although it is difficult to find Na-ion batteries which achieve substantial specific capacities at voltages above 3 V (vs Na?/Na), the honeycomb-layered compound Na(Ni2/3Sb1/3)O? can deliver up to 130 mAh/g of capacity at voltages above 3 V with this capacity concentrated in plateaus at 3.27 and 3.64 V. Comprehensive crystallographic studies have been carried out in order to understand the role of disorder in this system which can be prepared in both disordered and ordered forms, depending on the synthesis conditions. The average structure of Na(Ni2/3Sb1/3)O? is always found to adopt an O3-type stacking sequence, though different structures for the disordered (R3m, #166, a = b = 3.06253(3) and c = 16.05192(7) ) and ordered variants (C2/m, #12, a = 5.30458(1) , b = 9.18432(1) , c = 5.62742(1) and ? = 108.2797(2)) are demonstrated through the combined Rietveld refinement of synchrotron X-ray and time-of-flight neutron powder diffraction data. However, pair distribution function studies find that the local structure of disordered Na(Ni2/3Sb1/3)O? is more correctly described using the honeycomb-ordered structural model, and solid state NMR studies confirm that the well-developed honeycomb ordering of Ni and Sb cations within the transition metal layers is indistinguishable from that of the ordered phase. The disorder is instead found to mainly occur perpendicular to the honeycomb layers with an observed coherence length of not much more than 1 nm seen in electron diffraction studies. When the Na environment is probed through Na solid state NMR, no evidence is found for prismatic Na environments, and a bulk diffraction analysis finds no evidence of conventional stacking

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