National Library of Energy BETA

Sample records for thin film photovoltaic

  1. NREL: Photovoltaics Research - Thin Film Photovoltaic Partnership...

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Thin Film Photovoltaic Partnership Project NREL's Thin Film Photovoltaic (PV) Partnership Project led R&D on emerging thin-film solar technologies in the United States from 1994 to ...

  2. Thin film photovoltaic cell

    DOEpatents

    Meakin, John D.; Bragagnolo, Julio

    1982-01-01

    A thin film photovoltaic cell having a transparent electrical contact and an opaque electrical contact with a pair of semiconductors therebetween includes utilizing one of the electrical contacts as a substrate and wherein the inner surface thereof is modified by microroughening while being macro-planar.

  3. Thin film photovoltaic device

    DOEpatents

    Catalano, Anthony W.; Bhushan, Manjul

    1982-01-01

    A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids.

  4. Thin film photovoltaic device

    DOEpatents

    Catalano, A.W.; Bhushan, M.

    1982-08-03

    A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids. 5 figs.

  5. Polycrystalline Thin-Film Photovoltaics | Photovoltaic Research...

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Polycrystalline Thin-Film Photovoltaics Cadmium Telluride (CdTe) We develop processes and a range of materials for CdTe photovoltaic (PV) devices. Our work includes advanced ...

  6. Partial Shade Stress Test for Thin-Film Photovoltaic Modules...

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Partial Shade Stress Test for Thin-Film Photovoltaic Modules Preprint Timothy J. ... Partial shade stress test for thin-film photovoltaic modules Timothy J Silverman , ...

  7. Thin film photovoltaic panel and method

    SciTech Connect

    Ackerman, B.; Albright, S.P.; Jordan, J.F.

    1991-06-11

    This patent describes an improved stability photovoltaic panel. It comprises photovoltaic cells each having polycrystalline thin film layers, each of the thin film layers respectively deposited on a common vitreous substrate for allowing light to pass therethrough to reach a photovoltaic heterojunction formed by at least two of the thin film layers, at least one of the film layers forming the photovoltaic heterojunction for each of the photovoltaic cells, each of the photovoltaic cells lying within a plane substantially parallel to an interior planar surface of the vitreous substrate, each of the photovoltaic cells being connected electrically in series to pass electrical current from the photovoltaic panel, a pliable sheet material backcap opposite the vitreous substrate with respect to the photovoltaic cells and spaced from the photovoltaic cells so as to form a substantially planar spacing between the photovoltaic cells and an interior surface of the sheet material backcap, a perimeter portion of the sheet material backcap having a bend for positioning an edge strip of the sheet material backcap spaced from the interior surface of the backcap to form the planar spacing, the edge strip forming a planar surface parallel with a sealingly engaging the vitreous substrate for forming a fluid-tight seal with the vitreous substrate about the perimeter of the photovoltaic cells for protecting the photovoltaic cells from elements exterior of the photovoltaic panel, and a selected desiccant filling substantially the planar spacing for preventing water vapor within the planar spacing from adversely affecting the photovoltaic cells.

  8. Thin Film Photovoltaic Partnership Project | Photovoltaic Research | NREL

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Thin Film Photovoltaic Partnership Project NREL's Thin Film Photovoltaic (PV) Partnership Project led R&D on emerging thin-film solar technologies in the United States from 1994 to 2009. The project made many advances in thin-film PV technologies that allowed the United States to attain world leadership in this area of solar technology. Three national R&D teams focused on thin-film semiconductor materials: amorphous silicon (a-Si), cadmium telluride (CdTe), and copper indium gallium

  9. Thin film photovoltaic panel and method

    DOEpatents

    Ackerman, Bruce; Albright, Scot P.; Jordan, John F.

    1991-06-11

    A thin film photovoltaic panel includes a backcap for protecting the active components of the photovoltaic cells from adverse environmental elements. A spacing between the backcap and a top electrode layer is preferably filled with a desiccant to further reduce water vapor contamination of the environment surrounding the photovoltaic cells. The contamination of the spacing between the backcap and the cells may be further reduced by passing a selected gas through the spacing subsequent to sealing the backcap to the base of the photovoltaic panels, and once purged this spacing may be filled with an inert gas. The techniques of the present invention are preferably applied to thin film photovoltaic panels each formed from a plurality of photovoltaic cells arranged on a vitreous substrate. The stability of photovoltaic conversion efficiency remains relatively high during the life of the photovoltaic panel, and the cost of manufacturing highly efficient panels with such improved stability is significantly reduced.

  10. NREL: Energy Analysis - Crystalline Silicon and Thin Film Photovoltaic...

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Crystalline Silicon and Thin Film Photovoltaic Results - Life Cycle Assessment ... residential and utility-scale solar photovoltaic (PV) systems with wide-ranging results. ...

  11. Thin Film CIGS and CdTe Photovoltaic Technologies: Commercialization...

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    ... Keywords: thin film, photovoltaics, amorphous silicon, cadmium telluride, copper indium diselenide, solar cell, module 1.0 INTRODUCTION Major advances have occurred in the past ...

  12. Utility-scale flat-plate thin film photovoltaics

    SciTech Connect

    None, None

    2009-01-18

    The thin-film photovoltaics section of the Renewable Energy Technology Characterizations describes the technical and economic status of this emerging renewable energy option for electricity supply.

  13. Comparison of Thin Epitaxial Film Silicon Photovoltaics Fabricated...

    Office of Scientific and Technical Information (OSTI)

    Silicon Photovoltaics Fabricated on Monocrystalline and Polycrystalline Seed Layers on Glass Citation Details In-Document Search Title: Comparison of Thin Epitaxial Film Silicon ...

  14. Enhanced Thin Film Organic Photovoltaic Devices - Energy Innovation Portal

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Solar Photovoltaic Solar Photovoltaic Find More Like This Return to Search Enhanced Thin Film Organic Photovoltaic Devices Brookhaven National Laboratory Contact BNL About This Technology An Embodiment of the Optical Field Confinement Device An Embodiment of the Optical Field Confinement Device Technology Marketing Summary A novel structure design for thin film organic photovoltaic (OPV) devices provides a system for increasing the optical absorption in the active layer. The waveguided structure

  15. Thin film photovoltaic device with multilayer substrate

    DOEpatents

    Catalano, Anthony W.; Bhushan, Manjul

    1984-01-01

    A thin film photovoltaic device which utilizes at least one compound semiconductor layer chosen from Groups IIB and VA of the Periodic Table is formed on a multilayer substrate The substrate includes a lowermost support layer on which all of the other layers of the device are formed. Additionally, an uppermost carbide or silicon layer is adjacent to the semiconductor layer. Below the carbide or silicon layer is a metal layer of high conductivity and expansion coefficient equal to or slightly greater than that of the semiconductor layer.

  16. Progress in thin film solar photovoltaic technologies

    SciTech Connect

    Ullal, H.S.; Zweibel, K.; Mitchell, R.L. )

    1991-01-01

    This paper focuses on the rapid recent advances made by thin film solar cell technologies, namely, amorphous silicon, copper indium diselenide, and cadmium telluride. It also indicates the several advantages of thin films. Various consumer products and power applications using thin film solar cells are also discussed. The increasing interest among the utilities for PV system applications is also elucidated.

  17. Thin film photovoltaic device and process of manufacture

    DOEpatents

    Albright, Scot P.; Chamberlin, Rhodes

    1997-10-07

    Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells.

  18. Thin film photovoltaic device and process of manufacture

    DOEpatents

    Albright, Scot P.; Chamberlin, Rhodes

    1999-02-09

    Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells.

  19. Thin film photovoltaic device and process of manufacture

    DOEpatents

    Albright, S.P.; Chamberlin, R.

    1997-10-07

    Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells. 13 figs.

  20. Thin film photovoltaic device and process of manufacture

    DOEpatents

    Albright, S.P.; Chamberlin, R.

    1999-02-09

    Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells. 13 figs.

  1. Progress in thin film solar photovoltaic technologies

    SciTech Connect

    Ullal, H.S.; Zweibel, K.

    1989-12-01

    This paper focuses on the rapid recent advances made by thin film solar cell technologies, namely, amorphous silicon, copper indium diselenide, and cadmium telluride. It also indicates the several advantages of thin films. Various consumer products and power applications using thin film solar cells are also discussed. The increasing interest among the utilities for PV system applications is also elucidated. 29 refs., 8 figs., 3 tabs.

  2. The state of the art of thin-film photovoltaics

    SciTech Connect

    Surek, T.

    1993-10-01

    Thin-film photovoltaic technologies, based on materials such as amorphous or polycrystalline silicon, copper indium diselenide, cadmium telluride, and gallium arsenide, offer the potential for significantly reducing the cost of electricity generated by photovoltaics. The significant progress in the technologies, from the laboratory to the marketplace, is reviewed. The common concerns and questions raised about thin films are addressed. Based on the progress to date and the potential of these technologies, along with continuing investments by the private sector to commercialize the technologies, one can conclude that thin-film PV will provide a competitive alternative for large-scale power generation in the future.

  3. Thin-Film Photovoltaics on Solar House

    Office of Energy Efficiency and Renewable Energy (EERE)

    In this photograph, people are reflected on Team Germany's window louvers with integrated thin-film copper indium gallium selenide (CIGS) cells during the U.S. Department of Energy Solar Decathlon...

  4. Black Silicon Enhanced Thin Film Silicon Photovoltaic Devices

    SciTech Connect

    Martin U. Pralle; James E. Carey

    2010-07-31

    SiOnyx has developed an enhanced thin film silicon photovoltaic device with improved efficiency. Thin film silicon solar cells suffer from low material absorption characteristics resulting in poor cell efficiencies. SiOnyx’s approach leverages Black Silicon, an advanced material fabricated using ultrafast lasers. The laser treated films show dramatic enhancement in optical absorption with measured values in excess of 90% in the visible spectrum and well over 50% in the near infrared spectrum. Thin film Black Silicon solar cells demonstrate 25% higher current generation with almost no impact on open circuit voltage as compared with representative control samples. The initial prototypes demonstrated an improvement of nearly 2 percentage points in the suns Voc efficiency measurement. In addition we validated the capability to scale this processing technology to the throughputs (< 5 min/m2) required for volume production using state of the art commercially available high power industrial lasers. With these results we clearly demonstrate feasibility for the enhancement of thin film solar cells with this laser processing technique.

  5. Final Report - Vapor Transport Deposition for III-V Thin Film Photovoltaics

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    | Department of Energy Vapor Transport Deposition for III-V Thin Film Photovoltaics Final Report - Vapor Transport Deposition for III-V Thin Film Photovoltaics Awardee: University of Oregon Location: Eugene, OR Subprogram: Photovoltaics Funding Program: Bridging Research Interactions through Collaborative Development Grants in Energy (BRIDGE) Silicon, the dominant photovoltaic (PV) technology, is reaching its fundamental performance limits as a single absorber/junction technology. Higher

  6. Photovoltaic Polycrystalline Thin-Film Cell Basics | Department...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Thin films are unlike single-crystal silicon cells, which must be individually interconnected into a module. Thin-film devices can be made as a single unit-that is, ...

  7. Photovoltaic Single-Crystalline, Thin-Film Cell Basics

    Energy.gov [DOE]

    Single-crystalline thin films are made from gallium arsenide (GaAs), a compound semiconductor that is a mixture of gallium and arsenic.

  8. Method and apparatus for increasing the durability and yield of thin film photovoltaic devices

    DOEpatents

    Phillips, James E.; Lasswell, Patrick G.

    1987-01-01

    Thin film photovoltaic cells having a pair of semiconductor layers between an opaque and a transparent electrical contact are manufactured in a method which includes the step of scanning one of the semiconductor layers to determine the location of any possible shorting defect. Upon the detection of such defect, the defect is eliminated to increase the durability and yield of the photovoltaic device.

  9. PROJECT PROFILE: High-resolution Investigations of Transport Limiting Defects and Interfaces in Thin-Film Photovoltaic Devices

    Office of Energy Efficiency and Renewable Energy (EERE)

    This project will develop the capability of high-resolution transport imaging in photovoltaic (PV) devices, which is useful for improving polycrystalline thin-film PV materials.

  10. NREL: Photovoltaics Research - Polycrystalline Thin-Film Materials...

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    researchers, postdocs, and students. CdTe Research CdTe-based thin-film solar cell modules currently represent one of the fastest-growing segments of commercial module production. ...

  11. Polycrystalline Thin Film Photovoltaics: Research, Development, and Technologies: Preprint

    SciTech Connect

    Ullal, H. S.; Zweibel, K.; von Roedern, B.

    2002-05-01

    II-VI binary thin-film solar cells based on cadmium telluride (CdTe) and I-III-VI ternary thin-film solar cells based on copper indium diselenide (CIS) and related materials have been the subject of intense research and development in the past few years. Substantial progress has been made thus far in the area of materials research, device fabrication, and technology development, and numerous applications based on CdTe and CIS have been deployed worldwide. World record efficiency of 16.5% has been achieved by NREL scientists for a thin-film CdTe solar cell using a modified device structure. Also, NREL scientists achieved world-record efficiency of 21.1% for a thin-film CIGS solar cell under a 14X concentration and AM1.5 global spectrum. When measured under a AM1.5 direct spectrum, the efficiency increases to 21.5%. Pathways for achieving 25% efficiency for tandem polycrystalline thin-film solar cells are elucidated. R&D issues relating to CdTe and CIS are reported in this paper, such as contact stability and accelerated life testing in CdTe, and effects of moisture ingress in thin-film CIS devices. Substantial technology development is currently under way, with various groups reporting power module efficiencies in the range of 7.0% to 12.1% and power output of 40.0 to 92.5 W. A number of lessons learned during the scale-up activities of the technology development for fabrication of thin-film power modules are discussed. The major global players actively involved in the technology development and commercialization efforts using both rigid and flexible power modules are highlighted.

  12. Method for producing textured substrates for thin-film photovoltaic cells

    DOEpatents

    Lauf, R.J.

    1996-04-02

    The invention pertains to the production of ceramic substrates used in the manufacture of thin-film photovoltaic cells used for directly converting solar energy to electrical energy. Elongated ribbon-like sheets of substrate precursor containing a mixture of ceramic particulates, a binder, and a plasticizer are formed and then while green provided with a mechanically textured surface region used for supporting the thin film semiconductor of the photovoltaic cell when the sheets of the substrate precursor are subsequently cut into substrate-sized shapes and then sintered. The textured surface pattern on the substrate provides enhanced light trapping and collection for substantially increasing the, solar energy conversion efficiency of thin-film photovoltaic cells. 4 figs.

  13. Method for producing textured substrates for thin-film photovoltaic cells

    DOEpatents

    Lauf, R.J.

    1994-04-26

    The invention pertains to the production of ceramic substrates used in the manufacture of thin-film photovoltaic cells used for directly converting solar energy to electrical energy. Elongated ribbon-like sheets of substrate precursor containing a mixture of ceramic particulates, a binder, and a plasticizer are formed and then while green provided with a mechanically textured surface region used for supporting the thin film semiconductor of the photovoltaic cell when the sheets of the substrate precursor are subsequently cut into substrate-sized shapes and then sintered. The textured surface pattern on the substrate provides enhanced light trapping and collection for substantially increasing the solar energy conversion efficiency of thin-film photovoltaic cells. 4 figures.

  14. Method for producing textured substrates for thin-film photovoltaic cells

    DOEpatents

    Lauf, Robert J.

    1996-01-01

    The invention pertains to the production of ceramic substrates used in the manufacture of thin-film photovoltaic cells used for directly converting solar energy to electrical energy. Elongated ribbon-like sheets of substrate precursor containing a mixture of ceramic particulates, a binder, and a plasticizer are formed and then while green provided with a mechanically textured surface region used for supporting the thin film semiconductor of the photovoltaic cell when the sheets of the substrate precursor are subsequently cut into substrate-sized shapes and then sintered. The textured surface pattern on the substrate provides enhanced light trapping and collection for substantially increasing the, solar energy conversion efficiency of thin-film photovoltaic cells.

  15. Method for producing textured substrates for thin-film photovoltaic cells

    DOEpatents

    Lauf, Robert J.

    1994-01-01

    The invention pertains to the production of ceramic substrates used in the manufacture of thin-film photovoltaic cells used for directly converting solar energy to electrical energy. Elongated ribbon-like sheets of substrate precursor containing a mixture of ceramic particulates, a binder, and a plasticizer are formed and then while green provided with a mechanically textured surface region used for supporting the thin film semiconductor of the photovoltaic cell when the sheets of the substrate precursor are subsequently cut into substrate-sized shapes and then sintered. The textured surface pattern on the substrate provides enhanced light trapping and collection for substantially increasing the solar energy conversion efficiency of thin-film photovoltaic cells.

  16. Thin Film Materials and Processing Techniques for a Next Generation Photovoltaic Device: Cooperative Research and Development Final Report, CRADA Number CRD-12-470

    SciTech Connect

    van Hest, M.

    2013-08-01

    This research extends thin film materials and processes relevant to the development and production of a next generation photovoltaic device.

  17. Inverse Design of High-Absorption Thin-Film Photovoltaic Materials

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Center for Inverse Design scientists identified some potential Cu-V-VI thin-film photovoltaic (PV) absorber materials that have stronger solar absorption than CuInSe 2 -one of the most- studied thin-film PV absorber materials-and revealed a general structure-property (absorption) relationship. Significance and Impact The strongly absorbing materials that were identified can be incorporated into solar cells in very thin films. Also, they avoid using a low-Earth-abundant element such as In

  18. Method and apparatus for increasing the durability and yield of thin film photovoltaic devices

    DOEpatents

    Phillips, J.E.; Lasswell, P.G.

    1987-02-03

    Thin film photovoltaic cells having a pair of semiconductor layers between an opaque and a transparent electrical contact are manufactured in a method which includes the step of scanning one of the semiconductor layers to determine the location of any possible shorting defect. Upon the detection of such defect, the defect is eliminated to increase the durability and yield of the photovoltaic device. 10 figs.

  19. Thin Film CIGS and CdTe Photovoltaic Technologies: Commercialization...

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Photovoltaic Technologies: Commercialization, Critical Issues, and Applications Preprint H.S. Ullal and B. von Roedern To be presented at the 22nd European Photovoltaic Solar ...

  20. Thin Film CIGS and CdTe Photovoltaic Technologies: Commercialization, Critical Issues, and Applications; Preprint

    SciTech Connect

    Ullal, H. S.; von Roedern, B.

    2007-09-01

    We report here on the major commercialization aspects of thin-film photovoltaic (PV) technologies based on CIGS and CdTe (a-Si and thin-Si are also reported for completeness on the status of thin-film PV). Worldwide silicon (Si) based PV technologies continues to dominate at more than 94% of the market share, with the share of thin-film PV at less than 6%. However, the market share for thin-film PV in the United States continues to grow rapidly over the past several years and in CY 2006, they had a substantial contribution of about 44%, compared to less than 10% in CY 2003. In CY 2007, thin-film PV market share is expected to surpass that of Si technology in the United States. Worldwide estimated projections for CY 2010 are that thin-film PV production capacity will be more than 3700 MW. A 40-MW thin-film CdTe solar field is currently being installed in Saxony, Germany, and will be completed in early CY 2009. The total project cost is Euro 130 million, which equates to an installed PV system price of Euro 3.25/-watt averaged over the entire solar project. This is the lowest price for any installed PV system in the world today. Critical research, development, and technology issues for thin-film CIGS and CdTe are also elucidated in this paper.

  1. Thin film heterojunction photovoltaic cells and methods of making the same

    DOEpatents

    Basol, Bulent M.; Tseng, Eric S.; Rod, Robert L.

    1983-06-14

    A method of fabricating a thin film heterojunction photovoltaic cell which comprises depositing a film of a near intrinsic or n-type semiconductor compound formed of at least one of the metal elements of Class II B of the Periodic Table of Elements and at least tellurium and then heating said film at a temperature between about 250.degree. C. and 500.degree. C. for a time sufficient to convert said film to a suitably low resistivity p-type semiconductor compound. Such film may be deposited initially on the surface of an n-type semiconductor substrate. Alternatively, there may be deposited on the converted film a layer of n-type semiconductor compound different from the film semiconductor compound. The resulting photovoltaic cell exhibits a substantially increased power output over similar cells not subjected to the method of the present invention.

  2. Progress Toward a Stabilization and Preconditioning Protocol for Polycrystalline Thin-Film Photovoltaic Modules

    SciTech Connect

    del Cueto, J. A.; Deline, C. A.; Rummel, S. R.; Anderberg, A.

    2010-08-01

    Cadmium telluride (CdTe) and copper indium gallium diselenide (CIGS) thin-film photovoltaic (PV) modules can exhibit substantial variation in measured performance depending on prior exposure history. This study examines the metastable performance changes in these PV modules with the goal of establishing standard preconditioning or stabilization exposure procedures to mitigate measured variations prior to current-voltage (IV) measurements.

  3. Photoluminescence-based quality control for thin film absorber layers of photovoltaic devices

    SciTech Connect

    Repins, Ingrid L.; Kuciauskas, Darius

    2015-07-07

    A time-resolved photoluminescence-based system providing quality control during manufacture of thin film absorber layers for photovoltaic devices. The system includes a laser generating excitation beams and an optical fiber with an end used both for directing each excitation beam onto a thin film absorber layer and for collecting photoluminescence from the absorber layer. The system includes a processor determining a quality control parameter such as minority carrier lifetime of the thin film absorber layer based on the collected photoluminescence. In some implementations, the laser is a low power, pulsed diode laser having photon energy at least great enough to excite electron hole pairs in the thin film absorber layer. The scattered light may be filterable from the collected photoluminescence, and the system may include a dichroic beam splitter and a filter that transmit the photoluminescence and remove scattered laser light prior to delivery to a photodetector and a digital oscilloscope.

  4. Electrodeposition of Zn based nanostructure thin films for photovoltaic applications

    SciTech Connect

    Al-Bathi, S. A. M.

    2015-03-30

    We present here a systematic study on the synthesis thin films of various ZnO, CdO, Zn{sub x}Cd{sub 1-x} (O) and ZnTe nanostructures by electrodeposition technique with ZnCl{sub 2,} CdCl{sub 2} and ZnSO{sub 4} solution as starting reactant. Several reaction parameters were examined to develop an optimal procedure for controlling the size, shape, and surface morphology of the nanostructure. The results showed that the morphology of the products can be carefully controlled through adjusting the concentration of the electrolyte. The products present well shaped Nanorods arrays at specific concentration and temperature. UV-VIS spectroscopy and X-ray diffraction results show that the product presents good crystallinity. A possible formation process has been proposed.

  5. Flexible Ultra Moisture Barrier Film for Thin-Film Photovoltaic Applications

    SciTech Connect

    David M. Dean

    2012-10-30

    Flexible Thin-film photovoltaic (TFPV) is a low cost alternative to incumbent c-Si PV products as it requires less volume of costly semiconductor materials and it can potentially reduce installation cost. Among the TFPV options, copper indium gallium diselenide (CIGS) has the highest efficiency and is believed to be one of the most attractive candidates to achieve PV cost reduction. However, CIGS cells are very moisture sensitive and require module water vapor transmission rate (WVTR) of less than 1x10-4 gram of water per square meter per day (g-H2O/m2/day). Successful development and commercialization of flexible transparent ultra moisture barrier film is the key to enable flexible CIGS TFPV products, and thus enable ultimate PV cost reduction. At DuPont, we have demonstrated at lab scale that we can successfully make polymer-based flexible transparent ultra moisture barrier film by depositing alumina on polymer films using atomic layer deposition (ALD) technology. The layer by layer ALD approach results in uniform and amorphous structure which effectively reduces pinhole density of the inorganic coating on the polymer, and thus allow the fabrication of flexible barrier film with WVTR of 10-5 g-H2O/m2/day. Currently ALD is a time-consuming process suitable only for high-value, relatively small substrates. To successfully commercialize the ALD-on-plastic technology for the PV industry, there is the need to scale up this technology and improve throughput. The goal of this contract work was to build a prototype demonstrating that the ALD technology could be scaled-up for commercial use. Unfortunately, the prototype failed to produce an ultra-barrier film by the close of the project.

  6. Low Cost Thin Film Building-Integrated Photovoltaic Systems

    SciTech Connect

    Dr. Subhendu Guha; Dr. Jeff Yang

    2012-05-25

    The goal of the program is to develop 'LOW COST THIN FILM BUILDING-INTEGRATED PV SYSTEMS'. Major focus was on developing low cost solution for the commercial BIPV and rooftop PV market and meet DOE LCOE goal for the commercial market segment of 9-12 cents/kWh for 2010 and 6-8 cents/kWh for 2015. We achieved the 2010 goal and were on track to achieve the 2015 goal. The program consists of five major tasks: (1) modules; (2) inverters and BOS; (3) systems engineering and integration; (4) deployment; and (5) project management and TPP collaborative activities. We successfully crossed all stage gates and surpassed all milestones. We proudly achieved world record stable efficiencies in small area cells (12.56% for 1cm2) and large area encapsulated modules (11.3% for 800 cm2) using a triple-junction amorphous silicon/nanocrystalline silicon/nanocrystalline silicon structure, confirmed by the National Renewable Energy Laboratory. We collaborated with two inverter companies, Solectria and PV Powered, and significantly reduced inverter cost. We collaborated with three universities (Syracuse University, University of Oregon, and Colorado School of Mines) and National Renewable Energy Laboratory, and improved understanding on nanocrystalline material properties and light trapping techniques. We jointly published 50 technical papers in peer-reviewed journals and International Conference Proceedings. We installed two 75kW roof-top systems, one in Florida and another in New Jersey demonstrating innovative designs. The systems performed satisfactorily meeting/exceeding estimated kWh/kW performance. The 50/50 cost shared program was a great success and received excellent comments from DOE Manager and Technical Monitor in the Final Review.

  7. High efficiency thin-film multiple-gap photovoltaic device

    DOEpatents

    Dalal, Vikram L.

    1983-01-01

    A photovoltaic device includes at least two solar cells made from Group IV elements or their alloys in the amorphous state mounted on a substrate. The outermost or first cell has a larger bandgap than the second cell. Various techniques are utilized to improve the efficiency of the device.

  8. InGaN-based thin film solar cells: Epitaxy, structural design, and photovoltaic properties

    SciTech Connect

    Sang, Liwen; Liao, Meiyong; Koide, Yasuo; Sumiya, Masatomo

    2015-03-14

    In{sub x}Ga{sub 1−x}N, with the tunable direct bandgaps from ultraviolet to near infrared region, offers a promising candidate for the high-efficiency next-generation thin-film photovoltaic applications. Although the adoption of thick InGaN film as the active region is desirable to obtain efficient light absorption and carrier collection compared to InGaN/GaN quantum wells structure, the understanding on the effect from structural design is still unclear due to the poor-quality InGaN films with thickness and difficulty of p-type doping. In this paper, we comprehensively investigate the effects from film epitaxy, doping, and device structural design on the performances of the InGaN-based solar cells. The high-quality InGaN thick film is obtained on AlN/sapphire template, and p-In{sub 0.08}Ga{sub 0.92}N is achieved with a high hole concentration of more than 10{sup 18 }cm{sup −3}. The dependence of the photovoltaic performances on different structures, such as active regions and p-type regions is analyzed with respect to the carrier transport mechanism in the dark and under illumination. The strategy of improving the p-i interface by using a super-thin AlN interlayer is provided, which successfully enhances the performance of the solar cells.

  9. Partial Shade Stress Test for Thin-Film Photovoltaic Modules: Preprint

    SciTech Connect

    Silverman, Timothy J.; Deceglie, Michael G.; Deline, Chris; Kurtz, Sarah

    2015-09-02

    Partial shade of monolithic thin-film PV modules can cause reverse-bias conditions leading to permanent damage. In this work, we propose a partial shade stress test for thin-film PV modules that quantifies permanent performance loss. We designed the test with the aid of a computer model that predicts the local voltage, current and temperature stress that result from partial shade. The model predicts the module-scale interactions among the illumination pattern, the electrical properties of the photovoltaic material and the thermal properties of the module package. The test reproduces shading and loading conditions that may occur in the field. It accounts for reversible light-induced performance changes and for additional stress that may be introduced by light-enhanced reverse breakdown. We present simulated and experimental results from the application of the proposed test.

  10. Thermal and Electrical Effects of Partial Shade in Monolithic Thin-Film Photovoltaic Modules

    SciTech Connect

    Silverman, Timothy J.; Deceglie, Michael G.; Sun, Xingshu; Garris, Rebekah L.; Alam, Muhammad Ashraful; Deline, Chris; Kurtz, Sarah

    2015-06-14

    Photovoltaic cells can be damaged by reverse bias stress, which arises during service when a monolithically integrated thin-film module is partially shaded. We introduce a model for describing a module's internal thermal and electrical state, which cannot normally be measured. Using this model and experimental measurements, we present several results with relevance for reliability testing and module engineering: Modules with a small breakdown voltage experience less stress than those with a large breakdown voltage, with some exceptions for modules having light-enhanced reverse breakdown. Masks leaving a small part of the masked cells illuminated can lead to very high temperature and current density compared to masks covering entire cells.

  11. Chapter 1.19: Cadmium Telluride Photovoltaic Thin Film: CdTe

    SciTech Connect

    Gessert, T. A.

    2012-01-01

    The chapter reviews the history, development, and present processes used to fabricate thin-film, CdTe-based photovoltaic (PV) devices. It is intended for readers who are generally familiar with the operation and material aspects of PV devices but desire a deeper understanding of the process sequences used in CdTe PV technology. The discussion identifies why certain processes may have commercial production advantages and how the various process steps can interact with each other to affect device performance and reliability. The chapter concludes with a discussion of considerations of large-area CdTe PV deployment including issues related to material availability and energy-payback time.

  12. Thermal and Electrical Effects of Partial Shade in Monolithic Thin-Film Photovoltaic Modules: Preprint

    SciTech Connect

    Silverman, Timothy J.; Deceglie, Michael G.; Sun, Xingshu; Garris, Rebekah L.; Alam, Muhammad Ashraful; Deline, Chris; Kurtz, Sarah

    2015-09-02

    Photovoltaic cells can be damaged by reverse bias stress, which arises during service when a monolithically integrated thin-film module is partially shaded. We introduce a model for describing a module's internal thermal and electrical state, which cannot normally be measured. Using this model and experimental measurements, we present several results with relevance for reliability testing and module engineering: Modules with a small breakdown voltage experience less stress than those with a large breakdown voltage, with some exceptions for modules having light-enhanced reverse breakdown. Masks leaving a small part of the masked cells illuminated can lead to very high temperature and current density compared to masks covering entire cells.

  13. Metastable Changes to the Temperature Coefficients of Thin-Film Photovoltaic Modules

    SciTech Connect

    Deceglie, M. G.; Silverman, T. J.; Marion, B.; Kurtz, S. R.

    2014-07-01

    Transient changes in the performance of thin-film modules with light exposure are a well-known and widely reported phenomenon. These changes are often the result of reversible metastabilities rather than irreversible changes. Here we consider how these metastable changes affect the temperature dependence of photovoltaic performance. We find that in CIGS modules exhibiting a metastable increase in performance with light exposure, the light exposure also induces an increase in the magnitude of the temperature coefficient. It is important to understand such changes when characterizing temperature coefficients and when analyzing the outdoor performance of newly installed modules.

  14. Robust Measurement of Thin-Film Photovoltaic Modules Exhibiting Light-Induced Transients: Preprint

    SciTech Connect

    Deceglie, Michael, G.; Silverman, Timothy J.; Marion, Bill; Kurtz, Sarah R.

    2015-09-09

    Light-induced changes to the current-voltage characteristic of thin-film photovoltaic modules (i.e. light-soaking effects) frustrate the repeatable measurement of their operating power. We describe best practices for mitigating, or stabilizing, light-soaking effects for both CdTe and CIGS modules to enable robust, repeatable, and relevant power measurements. We motivate the practices by detailing how modules react to changes in different stabilization methods. We also describe and demonstrate a method for validating alternative stabilization procedures, such as those relying on forward bias in the dark. Reliable measurements of module power are critical for qualification testing, reliability testing, and power rating.

  15. Functional Multilayered Transparent Conducting Oxide Thin Films for Photovoltaic Devices

    SciTech Connect

    Noh, J. H.; Lee, S.; Kim, J. Y.; Lee, J. K.; Han, H. S.; Cho, C. M.; Cho, I. S.; Jung, H. S.; Hong, K. S.

    2009-01-01

    In this study, we present a thermally stable multilayered transparent conducting oxide (TCO) functionalized for dye-sensitized solar cells (DSSCs). Nb-doped TiO{sub 2} (NTO) layers deposited on conventional Sn-doped In{sub 2}O{sub 3} (ITO) substrates using pulsed laser deposition (PLD) enhanced the optical-to-electrical conversion efficiency of the DSSCs by as much as 17% compared to that of bare ITO-based DSSCs. The electrical properties and J-V characteristics of the multilayered NTO/ITO films showed that the improved cell performance was due to the facilitated charge injection from TiO{sub 2} to ITO that resulted from the formation of an ohmic contact with ITO, as well as the conserved high conductivity of ITO after the oxidizing annealing process. Moreover, the NTO/ITO-based DSSC exhibited higher efficiency than a F-doped SnO{sub 2}(FTO)-based one, which demonstrates that optimization of multilayered NTO-based TCOs is a realistic approach for achieving highly efficient photoenergy conversion devices.

  16. Metastable Electrical Characteristics of Polycrystalline Thin-Film Photovoltaic Modules upon Exposure and Stabilization: Preprint

    SciTech Connect

    Deline, C. A.; del Cueto, J. A.; Albin, D. S.; Rummel, S. R.

    2011-09-01

    The significant features of a series of stabilization experiments conducted at the National Renewable Energy Laboratory (NREL) between May 2009 and the present are reported. These experiments evaluated a procedure to stabilize the measured performance of thin-film polycrystalline cadmium telluride (CdTe) and copper indium gallium diselenide (CIGS) thin-film photovoltaic (PV) modules. The current-voltage (I-V) characteristics of CdTe and CIGS thin-film PV devices and modules exhibit transitory changes in electrical performance after thermal exposure in the dark and/or bias and light exposures. We present the results of our case studies of module performance versus exposure: light-soaked at 65 degrees C; exposed in the dark under forward bias at 65 degrees C; and, finally, longer-term outdoor exposure. We find that stabilization can be achieved to varying degrees using either light-soaking or dark bias methods and that the existing IEC 61646 light-soaking interval may be appropriate for CdTe and CIGS modules with one caveat: it is likely that at least three exposure intervals are required for stabilization.

  17. A comparison of light-coupling into high and low index nanostructured photovoltaic thin films

    SciTech Connect

    Pfadler, T.; Stärk, M.; Zimmermann, E.; Putnik, M.; Boneberg, J.; Weickert, J. E-mail: lukas.schmidt-mende@uni-konstanz.de; Schmidt-Mende, L. E-mail: lukas.schmidt-mende@uni-konstanz.de

    2015-06-01

    Periodically structured electrodes are typically introduced to thin-film photovoltaics for the purpose of light management. Highly effective light-trapping and optimal in-coupling of light is crucial to enhance the overall device performance in such thin-film systems. Here, wavelength-scale structures are transferred via direct laser interference patterning to electron-selective TiO{sub 2} electrodes. Two representative thin-film solar cell architectures are deposited on top: an organic solar cell featuring blended P3HT:PCBM as active material, and a hybrid solar cell with Sb{sub 2}S{sub 3} as inorganic active material. A direct correlation in the asymmetry in total absorption enhancement and in structure-induced light in-coupling is spectroscopically observed for the two systems. The structuring is shown to be beneficial for the total absorption enhancement if a high n active material is deposited on TiO{sub 2}, but detrimental for a low n material. The refractive indices of the employed materials are determined via spectroscopic ellipsometry. The study outlines that the macroscopic Fresnel equations can be used to investigate the spectroscopically observed asymmetry in light in-coupling at the nanostructured TiO{sub 2} active material interfaces by visualizing the difference in reflectivity caused by the asymmetry in refractive indices.

  18. Time-resolved, nonequilibrium carrier dynamics in Si-on-glass thin films for photovoltaic cells

    DOE PAGES [OSTI]

    Serafini, John; Akbas, Yunus; Crandall, Lucas; Bellman, Robert; Williams, Carlo Kosik; Sobolewski, Robert

    2016-03-02

    Here, a femtosecond pump–probe spectroscopy method was used to characterize the growth process and transport properties of amorphous silicon-on-glass, thin films, intended as absorbers for photovoltaic cells. We collected normalized transmissivity change (ΔT/T) waveforms and interpreted them using a comprehensive three-rate equation electron trapping and recombination model. Optically excited ~300–500 nm thick Si films exhibited a bi-exponential carrier relaxation with the characteristic times varying from picoseconds to nanoseconds depending on the film growth process. From our comprehensive trapping model, we could determine that for doped and intrinsic films with very low hydrogen dilution the dominant relaxation mode was carrier trapping;more » while for intrinsic films with large hydrogen content and some texture, it was the standard electron–phonon cooling. In both cases, the initial nonequilibrium relaxation was followed by Shockley–Read–Hall recombination. An excellent fit between the model and the ΔT/T experimental transients was obtained and a correlation between the Si film growth process, its hydrogen content, and the associated trap concentration was demonstrated.« less

  19. Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts

    DOEpatents

    Jansen, Kai W.; Maley, Nagi

    2000-01-01

    High performance photovoltaic modules are produced with improved interconnects by a special process. Advantageously, the photovoltaic modules have a dual layer back (rear) contact and a front contact with at least one layer. The front contact and the inner layer of the back contact can comprise a transparent conductive oxide. The outer layer of the back contact can comprise a metal or metal oxide. The front contact can also have a dielectric layer. In one form, the dual layer back contact comprises a zinc oxide inner layer and an aluminum outer layer and the front contact comprises a tin oxide inner layer and a silicon dioxide dielectric outer layer. One or more amorphous silicon-containing thin film semiconductors can be deposited between the front and back contacts. The contacts can be positioned between a substrate and an optional superstrate. During production, the transparent conductive oxide layer of the front contact is scribed by a laser, then the amorphous silicon-containing semiconductors and inner layer of the dual layer back contact are simultaneously scribed and trenched (drilled) by the laser and the trench is subsequently filled with the same metal as the outer layer of the dual layer back contact to provide a superb mechanical and electrical interconnect between the front contact and the outer layer of the dual layer back contact. The outer layer of the dual layer back contact can then be scribed by the laser. For enhanced environmental protection, the photovoltaic modules can be encapsulated.

  20. Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts

    DOEpatents

    Jansen, Kai W.; Maley, Nagi

    2001-01-01

    High performance photovoltaic modules are produced with improved interconnects by a special process. Advantageously, the photovoltaic modules have a dual layer back (rear) contact and a front contact with at least one layer. The front contact and the inner layer of the back contact can comprise a transparent conductive oxide. The outer layer of the back contact can comprise a metal or metal oxide. The front contact can also have a dielectric layer. In one form, the dual layer back contact comprises a zinc oxide inner layer and an aluminum outer layer and the front contact comprises a tin oxide inner layer and a silicon dioxide dielectric outer layer. One or more amorphous silicon-containing thin film semiconductors can be deposited between the front and back contacts. The contacts can be positioned between a substrate and an optional superstrate. During production, the transparent conductive oxide layer of the front contact is scribed by a laser, then the amorphous silicon-containing semiconductors and inner layer of the dual layer back contact are simultaneously scribed and trenched (drilled) by the laser and the trench is subsequently filled with the same metal as the outer layer of the dual layer back contact to provide a superb mechanical and electrical interconnect between the front contact and the outer layer of the dual layer back contact. The outer layer of the dual layer back contact can then be scribed by the laser. For enhanced environmental protection, the photovoltaic modules can be encapsulated.

  1. Recovery Act : Near-Single-Crystalline Photovoltaic Thin Films on Polycrystalline, Flexible Substrates

    SciTech Connect

    Venkat Selvamanickam; Alex Freundlich

    2010-11-29

    III-V photovoltaics have exhibited efficiencies above 40%, but have found only a limited use because of the high cost of single crystal substrates. At the other end of the spectrum, polycrystalline and amorphous thin film solar cells offer the advantage of low-cost fabrication, but have not yielded high efficiencies. Our program is based on single-crystalline-like thin film photovoltaics on polycrystalline substrates using biaxially-textured templates made by Ion Beam-Assisted Deposition (IBAD). MgO templates made by IBAD on flexible metal substrate have been successfully used for epitaxial growth of germanium films. In spite of a 4.5% lattice mismatch, heteroepitaxial growth of Ge was achieved on CeO2 that was grown on IBAD MgO template. Room temperature optical bandgap of the Ge films was identified at 0.67 eV indicating minimal residual strain. Refraction index and extinction coefficient values of the Ge films were found to match well with that measured from a reference Ge single crystal. GaAs has been successfully grown epitaxially on Ge on metal substrate by molecular beam epitaxy. RHEED patterns indicate self annihilation of antiphase boundaries and the growth of a single domain GaAs. The GaAs is found to exhibit strong photoluminescence signal and, an existence of a relatively narrow (FWHM~20 meV) band-edge excitons measured in this film indicates a good optoelectronic quality of deposited GaAs. While excellent epitaxial growth has been achieved in GaAs on flexible metal substrates, the defect density of the films as measured by High Resolution X-ray Diffraction and etch pit experiments showed a high value of 5 * 10^8 per cm^2. Cross sectional transmission electron microscopy of the multilayer architecture showed concentration of threading dislocations near the germanium-ceria interface. The defect density was found decrease as the Ge films were made thicker. The defects appear to originate from the MgO layer presumably because of large lattice mismatches

  2. Outdoor Performance of a Thin-Film Gallium-Arsenide Photovoltaic Module

    SciTech Connect

    Silverman, T. J.; Deceglie, M. G.; Marion, B.; Cowley, S.; Kayes, B.; Kurtz, S.

    2013-06-01

    We deployed a 855 cm2 thin-film, single-junction gallium arsenide (GaAs) photovoltaic (PV) module outdoors. Due to its fundamentally different cell technology compared to silicon (Si), the module responds differently to outdoor conditions. On average during the test, the GaAs module produced more power when its temperature was higher. We show that its maximum-power temperature coefficient, while actually negative, is several times smaller in magnitude than that of a Si module used for comparison. The positive correlation of power with temperature in GaAs is due to temperature-correlated changes in the incident spectrum. We show that a simple correction based on precipitable water vapor (PWV) brings the photocurrent temperature coefficient into agreement with that measured by other methods and predicted by theory. The low operating temperature and small temperature coefficient of GaAs give it an energy production advantage in warm weather.

  3. Superhydrophobic Thin Film Coatings - Energy Innovation Portal

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Solar Thermal Solar Thermal Solar Photovoltaic Solar Photovoltaic Industrial Technologies ... Find More Like This Return to Search Superhydrophobic Thin Film Coatings Oak Ridge ...

  4. Disruptive Low-Cost Thin-film Photovoltaics: A Pathway for'Solution...

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    In recent years organometal halide perovskite structures have emerged as an inexpensive and revolutionary family of photoactive semiconductors in thin-film PV: arguably the biggest ...

  5. Conductive polymer/fullerene blend thin films with honeycomb framework for transparent photovoltaic application

    DOEpatents

    Cotlet, Mircea; Wang, Hsing-Lin; Tsai, Hsinhan; Xu, Zhihua

    2015-04-21

    Optoelectronic devices and thin-film semiconductor compositions and methods for making same are disclosed. The methods provide for the synthesis of the disclosed composition. The thin-film semiconductor compositions disclosed herein have a unique configuration that exhibits efficient photo-induced charge transfer and high transparency to visible light.

  6. Biaxial texturing of inorganic photovoltaic thin films using low energy ion beam irradiation during growth

    SciTech Connect

    Groves, James R; De Paula, Raymond F; Hayes, Garrett H; Li, Joel B; Hammond, Robert H; Salleo, Alberto; Clemens, Bruce M

    2010-05-07

    We describe our efforts to control the grain boundary alignment in polycrystalline thin films of silicon by using a biaxially textured template layer of CaF{sub 2} for photovoltaic device applications. We have chosen CaF{sub 2} as a candidate material due to its close lattice match with silicon and its suitability as an ion beam assisted deposition (mAD) material. We show that the CaF{sub 2} aligns biaxially at a thickness of {approx}10 nm and, with the addition of an epitaxial CaF{sub 2} layer, has an in-plane texture of {approx}15{sup o}. Deposition of a subsequent layer of Si aligns on the template layer with an in-plane texture of 10.8{sup o}. The additional improvement of in-plane texture is similar to the behavior observed in more fully characterized IBAD materials systems. A germanium buffer layer is used to assist in the epitaxial deposition of Si on CaF{sub 2} template layers and single crystal substrates. These experiments confirm that an mAD template can be used to biaxially orient polycrystalline Si.

  7. Stability Issues of Transparent Conducting Oxides (TCOs) for Thin-Film Photovoltaics (Presentation)

    SciTech Connect

    Pern, J.

    2008-12-01

    Study of stability issues of TCOs for thin-film PV, including degradation of optical, electrical, and structural properties of TCOs in damp heat and required encapsulation to prevent moisture egress.

  8. Synthesis and characteristics of spray deposited CuInS{sub 2} nanocrystals thin films for photovoltaic applications

    SciTech Connect

    Majeed Khan, M.A.; Kumar, Sushil; AlSalhi, Mohamad S.

    2013-10-15

    Graphical abstract: - Highlights: • CuInS{sub 2} nanocrystals thin films were synthesized by spray pyrolysis technique. • They are polycrystalline and have chalcopyrite (tetragonal) structure. • They have high absorption coefficient ∼10{sup 4} cm{sup −1} and optimum band gap of 1.55 eV. • They showed excellent opto-electronic properties employable in photovoltaics. - Abstract: Nanocrystalline thin films of CuInS{sub 2}, an attractive absorber material for highly efficient and terrestrial photovoltaic devices, were deposited on ultraclean glass substrates using spray pyrolysis technique. The prepared films were characterized by FESEM, FETEM, HRTEM, AFM, XRD, optical absorption spectroscopy, photoluminescence and current–voltage characteristics. The films exhibit almost smooth, dense and uniform topography; and have nano-sized particles 40–60 nm of CuInS{sub 2}. XRD data show that the films are polycrystalline and have chalcopyrite (tetragonal) structure with crystallite size 45–60 nm. Optical absorption studies show that the band gap of spray deposited CuInS{sub 2} films is 1.55 eV, while absorption coefficient is of ∼10{sup 5} cm{sup −1}. PL spectra have only one peak at 1.43 eV which may be attributed to the excitonic recombination through donor–acceptor impurity levels in the sample. Furthermore, CdS/CuInS{sub 2} heterojunction was also produced onto ITO coated glass substrate to evaluate solar cell parameters such as short circuit current density, open circuit voltage, fill factor and conversion efficiency.

  9. Method for making photovoltaic devices using oxygenated semiconductor thin film layers

    SciTech Connect

    Johnson, James Neil; Albin, David Scott; Feldman-Peabody, Scott; Pavol, Mark Jeffrey; Gossman, Robert Dwayne

    2014-12-16

    A method for making a photovoltaic device is presented. The method includes steps of disposing a window layer on a substrate and disposing an absorber layer on the window layer. Disposing the window layer, the absorber layer, or both layers includes introducing a source material into a deposition zone, wherein the source material comprises oxygen and a constituent of the window layer, of the absorber layer or of both layers. The method further includes step of depositing a film that comprises the constituent and oxygen.

  10. Semiconductor-nanocrystal/conjugated polymer thin films

    DOEpatents

    Alivisatos, A. Paul; Dittmer, Janke J.; Huynh, Wendy U.; Milliron, Delia

    2010-08-17

    The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

  11. Semiconductor-nanocrystal/conjugated polymer thin films

    DOEpatents

    Alivisatos, A. Paul; Dittmer, Janke J.; Huynh, Wendy U.; Milliron, Delia

    2014-06-17

    The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

  12. Surfactant-Assisted Growth of CdS Thin Films for Photovoltaic Applications

    SciTech Connect

    Perkins, C. L.; Hasoon, F. S.

    2006-05-01

    A common nonionic surfactant, Triton X-100, was used to modify the chemical bath deposition of CdS 'buffer' layers on Cu(In,Ga)Se{sub 2} (CIGS) thin films. Addition of the surfactant to the CdS deposition bath allowed increased wetting of Cu(In,Ga)Se{sub 2} substrates and an increase in the uniformity of films, especially on model hydrophobic substrates. X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy data demonstrate that films produced with the surfactant have the same chemical and electronic properties as films grown without it. In CdS/Cu(In,Ga)Se{sub 2} devices, it was found that Triton X-100 allowed the use of CdS layers that were three to four times thinner than those used normally in high efficiency CIGS-based devices and eliminated the large drops in open-circuit voltage that usually accompany very thin buffer layers. For these thin CdS layers and relative to devices made without the surfactant, average absolute cell efficiencies were increased from 10.5% to 14.8% or by a relative 41%. Visual inspection of the CdS depositions reveals one possible mechanism of the surfactant's effects: Bubbles that form and adhere to the CIGS surface during the chemical bath deposition are almost completely eliminated with the addition of the TX-100. Thus, junction nonuniformities, pinholes, and thin areas in the CdS layer caused by poor wetting of the substrate surface are sharply reduced, leading to large increases in the open-circuit voltage in devices produced with the surfactant.

  13. High-throughput manufacturing of thin-film CdS/CdTe photovoltaic modules. Annual subcontract report, 16 September 1996--15 January 1998

    SciTech Connect

    Sandwisch, D.W. [Solar Cells, Inc., Toledo, OH (United States)

    1998-08-01

    Cadmium telluride (CdTe) is recognized as one of the leading materials for low-cost photovoltaic modules. Solar Cells, Inc., has developed this technology and is scaling its pilot production capabilities to a multi-megawatt level. The Photovoltaic Manufacturing Technology (PVMaT) subcontract supports these efforts. Activities during the third phase of the program concentrated on process development, equipment design and testing, quality assurance, ES and H programs, and large-scale next-generation coating-system prototype development. These efforts broadly addressed the issues of the manufacturing process for producing thin-film, monolithic CdS/CdTe photovoltaic modules.

  14. General method for simultaneous optimization of light trapping and carrier collection in an ultra-thin film organic photovoltaic cell

    SciTech Connect

    Tsai, Cheng-Chia Grote, Richard R.; Beck, Jonathan H.; Kymissis, Ioannis; Osgood, Richard M.; Englund, Dirk

    2014-07-14

    We describe a general method for maximizing the short-circuit current in thin planar organic photovoltaic (OPV) heterojunction cells by simultaneous optimization of light absorption and carrier collection. Based on the experimentally obtained complex refractive indices of the OPV materials and the thickness-dependence of the internal quantum efficiency of the OPV active layer, we analyze the potential benefits of light trapping strategies for maximizing the overall power conversion efficiency of the cell. This approach provides a general strategy for optimizing the power conversion efficiency of a wide range of OPV structures. In particular, as an experimental trial system, the approach is applied here to a ultra-thin film solar cell with a SubPc/C{sub 60} photovoltaic structure. Using a patterned indium tin oxide (ITO) top contact, the numerically optimized designs achieve short-circuit currents of 0.790 and 0.980 mA/cm{sup 2} for 30 nm and 45 nm SubPc/C{sub 60} heterojunction layer thicknesses, respectively. These values correspond to a power conversion efficiency enhancement of 78% for the 30 nm thick cell, but only of 32% for a 45 nm thick cell, for which the overall photocurrent is actually higher. Applied to other material systems, the general optimization method can elucidate if light trapping strategies can improve a given cell architecture.

  15. Pioneering Inkjet Printing Technology Produces Thin-Film Photovoltaics; The Spectrum of Clean Energy Innovation (Fact Sheet)

    SciTech Connect

    Not Available

    2010-06-01

    Fact sheet describing NREL's development of inkjet printing technology that can be used to produce thin-film solar modules.

  16. Radiation resistance of thin-film solar cells for space photovoltaic power

    SciTech Connect

    Woodyard, J.R.; Landis, G.A.

    1991-01-01

    Copper indium diselenide, cadmium telluride, and amorphous silicon alloy solar cells have achieved noteworthy performance and are currently being studied for space power applications. Cadmium sulfide cells had been the subject of much effort but are no longer considered for space applications. A review is presented of what is known about the radiation degradation of thin film solar cells in space. Experimental cadmium telluride and amorphous silicon alloy cells are reviewed. Damage mechanisms and radiation induced defect generation and passivation in the amorphous silicon alloy cell are discussed in detail due to the greater amount of experimental data available.

  17. Direct Thin Film Path to Low Cost, Large Area III-V Photovoltaics...

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    The photovoltaics achieve 25% power conversion efficiency at ... Under one-sun equivalent illumination, an open circuit ... limitations to deliver a promising low cost solar cell. ...

  18. High-throughput manufacturing of thin-film CdS/CdTe photovoltaic modules. Annual subcontract report, 16 November 1994--15 November 1995

    SciTech Connect

    Sandwisch, D.W. [Solar Cells, Inc., Toledo, OH (United States)

    1997-02-01

    The objectives of this subcontract are to advance Solar Cells, Inc.`s (SCI`s) photovoltaic manufacturing technologies, reduce module production costs, increase module performance, and provide the groundwork for SCI to expand its commercial production capacities. Activities during the second year of the program concentrated on process development, equipment design and testing, quality assurance, and ES and H programs. These efforts broadly addressed the issues of the manufacturing process for producing thin-film monolithic CdS/CdTe photovoltaic modules.

  19. Technical Note: Nanometric organic photovoltaic thin film detectors for dose monitoring in diagnostic x-ray imaging

    SciTech Connect

    Elshahat, Bassem; Gill, Hardeep Singh; Kumar, Jayant; Filipyev, Ilya; Zygmanski, Piotr; Shrestha, Suman; Karellas, Andrew; Hesser, Jürgen; Sajo, Erno

    2015-07-15

    Purpose: To fabricate organic photovoltaic (OPV) cells with nanometric active layers sensitive to ionizing radiation and measure their dosimetric characteristics in clinical x-ray beams in the diagnostic tube potential range of 60–150 kVp. Methods: Experiments were designed to optimize the detector’s x-ray response and find the best parameter combination by changing the active layer thickness and the area of the electrode. The OPV cell consisted of poly (3-hexylthiophene-2,5-diyl): [6,6]-phenyl C{sub 61} butyric acid methyl ester photoactive donor and acceptor semiconducting organic materials sandwiched between an aluminum electrode as an anode and an indium tin oxide electrode as a cathode. The authors measured the radiation-induced electric current at zero bias voltage in all fabricated OPV cells. Results: The net OPV current as a function of beam potential (kVp) was proportional to kVp{sup −0.5} when normalized to x-ray tube output, which varies with kVp. Of the tested configurations, the best combination of parameters was 270 nm active layer thicknesses with 0.7 cm{sup 2} electrode area, which provided the highest signal per electrode area. For this cell, the measured current ranged from approximately 0.7 to 2.4 nA/cm{sup 2} for 60–150 kVp, corresponding to about 0.09 nA–0.06 nA/mGy air kerma, respectively. When compared to commercial amorphous silicon thin film photovoltaic cells irradiated under the same conditions, this represents 2.5 times greater sensitivity. An additional 40% signal enhancement was observed when a 1 mm layer of plastic scintillator was attached to the cells’ beam-facing side. Conclusions: Since both OPVs can be produced as flexible devices and they do not require external bias voltage, they open the possibility for use as thin film in vivo detectors for dose monitoring in diagnostic x-ray imaging.

  20. Encapsulation Advancements Extend Life of Thin-Film PV; The Spectrum of Clean Energy Innovation (Fact Sheet)

    SciTech Connect

    Not Available

    2010-06-01

    Fact sheet describing NREL's transparent metal oxide coating used to protect thin-film photovoltaic modules.

  1. Final Technical Progress Report: High-Efficiency Low-Cost Thin-Film GaAs Photovoltaic Module Development Program; July 14, 2010 - January 13, 2012

    SciTech Connect

    Mattos, L.

    2012-03-01

    This is the final technical progress report of the High-Efficiency Low-Cost Thin-Film GaAs Photovoltaic Module Development Program. Alta Devices has successfully completed all milestones and deliverables established as part of the NREL PV incubator program. During the 18 months of this program, Alta has proven all key processes required to commercialize its solar module product. The incubator focus was on back end process steps directed at conversion of Alta's high quality solar film into high efficiency 1-sun PV modules. This report describes all program deliverables and the work behind each accomplishment.

  2. Nanostructured columnar heterostructures of TiO{sub 2} and Cu{sub 2}O enabled by a thin-film self-assembly approach: Potential for photovoltaics

    SciTech Connect

    Polat, zgr; Department of Physics and Astronomy, The University of Tennessee, Knoxville, TN 37996 ; Aytug, Tolga; Lupini, Andrew R.; Paranthaman, Parans M.; Ertugrul, Mehmet; Bogorin, Daniela F.; Meyer, Harry M.; Wang, Wei; Pennycook, Stephen J.; Christen, David K.

    2013-02-15

    Graphical abstract: Display Omitted Highlights: ? Material self-assembly in phase-separated oxides is exploited. ? Three-dimensionally nanostructured epitaxial films are grown using sputtering. ? Films are composed of well-ordered oriented nanopillars of n-type TiO{sub 2} and p-type Cu{sub 2}O. ? Observed interfaces at adjacent TiO{sub 2}Cu{sub 2}O columns are nearly atomically distinct. ? Absorption profile of the composite film captures a wide range of the solar spectrum. -- Abstract: Significant efforts are being devoted to the development of multifunctional thin-film heterostructures and nanostructured material architectures for components with novel applications of superconductivity, multiferroicity, solar photocatalysis and energy conversion. In particular, nanostructured assemblies with well-defined geometrical shapes have emerged as possible high efficiency and economically viable alternatives to planar photovoltaic thin-film architectures. By exploiting phase-separated self-assembly, here we present advances in a vertically oriented two-component system that offers potential for future development of nanostructured thin film solar cells. Through a single-step deposition by magnetron sputtering, we demonstrate growth of an epitaxial, composite film matrix formed as self-assembled, well ordered, phase segregated, and oriented nanopillars of n-type TiO{sub 2} and p-type Cu{sub 2}O. The composite films were structurally characterized to atomic resolution by a variety of analytical tools, and evaluated for preliminary optical properties using absorption measurements. We find nearly atomically distinct TiO{sub 2}Cu{sub 2}O interfaces (i.e., needed for possible active pn junctions), and an absorption profile that captures a wide range of the solar spectrum extending from ultraviolet to visible wavelengths. This high-quality materials system could lead to photovoltaic devices that can be optimized for both incident light absorption and carrier collection.

  3. Thin-Film Solar Cell Manufacturing

    Energy.gov [DOE]

    In this b-roll, thin-film photovoltaic cells are manufactured and deployed in Arizona. Steps shown in the manufacturing process include the screen printing of conductive material onto laminated...

  4. Thin film photovoltaic cells having increased durability and operating life and method for making same

    DOEpatents

    Barnett, Allen M.; Masi, James V.; Hall, Robert B.

    1980-12-16

    A solar cell having a copper-bearing absorber is provided with a composite transparent encapsulating layer specifically designed to prevent oxidation of the copper sulfide. In a preferred embodiment, the absorber is a layer of copper sulfide and the composite layer comprises a thin layer of copper oxide formed on the copper sulfide and a layer of encapsulating glass formed on the oxide. It is anticipated that such devices, when exposed to normal operating conditions of various terrestrial applications, can be maintained at energy conversion efficiencies greater than one-half the original conversion efficiency for periods as long as thirty years.

  5. Synthesizing photovoltaic thin films of high quality copper-zinc-tin alloy with at least one chalcogen species

    DOEpatents

    Teeter, Glenn; Du, Hui; Young, Matthew

    2013-08-06

    A method for synthesizing a thin film of copper, zinc, tin, and a chalcogen species ("CZTCh" or "CZTSS") with well-controlled properties. The method includes depositing a thin film of precursor materials, e.g., approximately stoichiometric amounts of copper (Cu), zinc (Zn), tin (Sn), and a chalcogen species (Ch). The method then involves re-crystallizing and grain growth at higher temperatures, e.g., between about 725 and 925 degrees K, and annealing the precursor film at relatively lower temperatures, e.g., between 600 and 650 degrees K. The processing of the precursor film takes place in the presence of a quasi-equilibrium vapor, e.g., Sn and chalcogen species. The quasi-equilibrium vapor is used to maintain the precursor film in a quasi-equilibrium condition to reduce and even prevent decomposition of the CZTCh and is provided at a rate to balance desorption fluxes of Sn and chalcogens.

  6. Thin film photovoltaic cells

    DOEpatents

    Rothwarf, Allen

    1981-01-01

    A solar cell has as its transparent electrical contact a grid made from a non-noble metal by providing a layer of copper oxide between the transparent electrical contact and the absorber-generator.

  7. Growth of polycrystalline Cu(In,Ga)Se{sub 2} thin films using a radio frequency-cracked Se-radical beam source and application for photovoltaic devices

    SciTech Connect

    Ishizuka, Shogo; Shibata, Hajime; Yamada, Akimasa; Fons, Paul; Sakurai, Keiichiro; Matsubara, Koji; Niki, Shigeru

    2007-07-23

    Cu(In,Ga)Se{sub 2} (CIGS) thin films were grown using a rf-cracked Se-radical beam source. A unique combination of film properties, a highly dense and smooth surface with large grain size, is shown. These features seem to have no significant influence on the photovoltaic performance. Defect control in bulk CIGS leading to corresponding variations in the electrical and photoluminescence properties was found to be possible by regulating the Se-radical source parameters. A competitive energy conversion efficiency of 17.5%, comparable to that of a Se-evaporative source grown CIGS device, has been demonstrated from a solar cell fabricated using a Se-radical source grown CIGS absorber.

  8. Understanding how processing additives tune nanoscale morphology of high efficiency organic photovoltaic blends: From casting solution to spun-cast thin film

    SciTech Connect

    Shao, Ming [ORNL; Keum, Jong Kahk [ORNL; Kumar, Rajeev [ORNL; Chen, Jihua [ORNL; Browning, Jim [ORNL; Chen, Wei [Argonne National Laboratory (ANL); Jianhui, Hou [Chinese Academy of Sciences (CAS), Institute of Chemistry; Do, Changwoo [ORNL; Littrell, Ken [ORNL; Sanjib, Das [University of Tennessee, Knoxville (UTK); Rondinone, Adam Justin [ORNL; Geohegan, David B [ORNL; Sumpter, Bobby G [ORNL; Xiao, Kai [ORNL

    2014-01-01

    Adding a small amount of a processing additive to the casting solution of organic blends has been demonstrated to be an effective method for achieving improved power conversion efficiency (PCE) in organic photovoltaics (OPVs). However, an understanding of the nano-structural evolution occurring in the transformation from casting solution to thin photoactive films is still lacking. In this report, we investigate the effects of the processing additive diiodooctane (DIO) on the morphology of OPV blend of PBDTTT-C-T and fullerene derivative, PC71BM in a casting solution and in spun-cast thin films by using neutron/x-ray scattering, neutron reflectometry and other characterization techniques. The results reveal that DIO has no effect on the solution structures of PBDTTT-C-T and PC71BM. In the spun-cast films, however, DIO is found to promote significantly the molecular ordering of PBDTTT-C-T and PC71BM, and phase segregation, resulting in the improved PCE. Thermodynamic analysis based on Flory-Huggins theory provides a rationale for the effects of DIO on different characteristics of phase segregation as a solvent and due to evaporationg during the film formation. Such information may enable improved rational design of ternary blends to more consistently achieve improved PCE for OPVs.

  9. Photovoltaic properties of Aurivillius phase Bi{sub 5}FeTi{sub 3}O{sub 15} thin films grown by pulsed laser deposition

    SciTech Connect

    Kooriyattil, Sudheendran; Katiyar, Rajesh K.; Pavunny, Shojan P. E-mail: shojanpp@gmail.com; Morell, Gerardo; Katiyar, Ram S. E-mail: shojanpp@gmail.com

    2014-08-18

    We report a remarkable photovoltaic effect in pulsed laser deposited multiferroic aurivillius phase Bi{sub 5}FeTi{sub 3}O{sub 15} (BFTO) thin films sandwiched between ZnO:Al transparent conductive oxide top electrode and SrRuO{sub 3} bottom electrode fabricated on amorphous fused silica substrates. The structural and micro structural properties of these films were analysed by X-ray diffraction and atomic force microscopy techniques. The films were showing a photo sensitive ferroelectric behaviour with a notable apparent polarization in the range of 1015??C/cm{sup 2}. These films also exhibited a switchable photo-response and this parameter was observed to be sensitive to polarisation field and the polarization direction. The device shows a large ON/OFF photo current ratio with an open circuit voltage of 0.14?V. The photo response at zero bias of this BFTO based heterostructures showed rapid increase to a saturation value of 6??A at zero bias.

  10. Thin-Film Material Science and Processing | Materials Science | NREL

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Thin-Film Material Science and Processing Photo of a stainless steel piece of equipment with multiple hoses and other equipment attached. NREL's expertise focuses on using thin films to create and enable technologically useful applications. For renewable energy, a prime example of this research is thin-film photovoltaics (PV). Thin films are important because they offer the potential for low-cost processing with minimal material usage while fulfilling application requirements. Importantly, this

  11. Porous thin films

    DOEpatents

    Xu, Ting

    2015-11-17

    Compositions of porous thin films and methods of making are provided. The methods involve self-assembly of a cyclic peptide in the presence of a block copolymer.

  12. Enhancement of current collection in epitaxial lift-off InAs/GaAs quantum dot thin film solar cell and concentrated photovoltaic study

    SciTech Connect

    Sogabe, Tomah Shoji, Yasushi; Tamayo, Efrain; Okada, Yoshitaka; Mulder, Peter; Schermer, John

    2014-09-15

    We report the fabrication of a thin film InAs/GaAs quantum dot solar cell (QD cell) by applying epitaxial lift-off (ELO) approach to the GaAs substrate. We confirmed significant current collection enhancement (∼0.91 mA/cm{sup 2}) in the ELO-InAs QD cell within the wavelength range of 700 nm–900 nm when compared to the ELO-GaAs control cell. This is almost six times of the sub-GaAs bandgap current collection (∼0.16 mA/cm{sup 2}) from the wavelength range of 900 nm and beyond, we also confirmed the ELO induced resonance cavity effect was able to increase the solar cell efficiency by increasing both the short circuit current and open voltage. The electric field intensity of the resonance cavity formed in the ELO film between the Au back reflector and the GaAs front contact layer was analyzed in detail by finite-differential time-domain (FDTD) simulation. We found that the calculated current collection enhancement within the wavelength range of 700 nm–900 nm was strongly influenced by the size and shape of InAs QD. In addition, we performed concentrated light photovoltaic study and analyzed the effect of intermediate states on the open voltage under varied concentrated light intensity for the ELO-InAs QD cell.

  13. Thin film hydrogen sensor

    DOEpatents

    Cheng, Y.T.; Poli, A.A.; Meltser, M.A.

    1999-03-23

    A thin film hydrogen sensor includes a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end. 5 figs.

  14. Thin film hydrogen sensor

    DOEpatents

    Cheng, Yang-Tse; Poli, Andrea A.; Meltser, Mark Alexander

    1999-01-01

    A thin film hydrogen sensor, includes: a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end.

  15. Undoped TiO{sub 2} and nitrogen-doped TiO{sub 2} thin films deposited by atomic layer deposition on planar and architectured surfaces for photovoltaic applications

    SciTech Connect

    Tian, Liang Soum-Glaude, Adurey; Volpi, Fabien; Salvo, Luc; Berthomé, Grégory; Coindeau, Stéphane; Mantoux, Arnaud; Boichot, Raphaël; Lay, Sabine; Brizé, Virginie; Blanquet, Elisabeth; Giusti, Gaël; Bellet, Daniel

    2015-01-15

    Undoped and nitrogen doped TiO{sub 2} thin films were deposited by atomic layer deposition on planar substrates. Deposition on 3D-architecture substrates made of metallic foams was also investigated to propose architectured photovoltaic stack fabrication. All the films were deposited at 265 °C and nitrogen incorporation was achieved by using titanium isopropoxide, NH{sub 3} and/or N{sub 2}O as precursors. The maximum nitrogen incorporation level obtained in this study was 2.9 at. %, resulting in films exhibiting a resistivity of 115 Ω cm (+/−10 Ω cm) combined with an average total transmittance of 60% in the 400–1000 nm wavelength range. Eventually, TiO{sub 2} thin films were deposited on the 3D metallic foam template.

  16. Polycrystalline Thin-Film Research: Cadmium Telluride (Fact Sheet)

    SciTech Connect

    Not Available

    2013-06-01

    This National Center for Photovoltaics sheet describes the capabilities of its polycrystalline thin-film research in the area of cadmium telluride. The scope and core competencies and capabilities are discussed.

  17. Multifunctional thin film surface

    DOEpatents

    Brozik, Susan M.; Harper, Jason C.; Polsky, Ronen; Wheeler, David R.; Arango, Dulce C.; Dirk, Shawn M.

    2015-10-13

    A thin film with multiple binding functionality can be prepared on an electrode surface via consecutive electroreduction of two or more aryl-onium salts with different functional groups. This versatile and simple method for forming multifunctional surfaces provides an effective means for immobilization of diverse molecules at close proximities. The multifunctional thin film has applications in bioelectronics, molecular electronics, clinical diagnostics, and chemical and biological sensing.

  18. Thin film tritium dosimetry

    DOEpatents

    Moran, Paul R.

    1976-01-01

    The present invention provides a method for tritium dosimetry. A dosimeter comprising a thin film of a material having relatively sensitive RITAC-RITAP dosimetry properties is exposed to radiation from tritium, and after the dosimeter has been removed from the source of the radiation, the low energy electron dose deposited in the thin film is determined by radiation-induced, thermally-activated polarization dosimetry techniques.

  19. Intermixing at the absorber-buffer layer interface in thin-film...

    Office of Scientific and Technical Information (OSTI)

    ... DOPED MATERIALS; IMPURITIES; INTERFACES; LAYERS; PASSIVATION; PHOTOVOLTAIC EFFECT; RECOMBINATION; SOLAR CELLS; THIN FILMS; TRAPS; ZINC SULFIDES Word Cloud More Like This Full ...

  20. Subdiffraction instrumentation development and application to the elucidation of biological systems, thin films, and organic photovoltaic devices

    SciTech Connect

    Lesoine, Michael D

    2014-12-01

    Fluorescence and Raman instrumentation was developed to elucidate morphology, information on local environment, and material properties of target systems. Far-field fluorescence and luminescence spectroscopic measurements were performed using a pulsed super-continuum laser source and detector with high temporal resolution. With this arrangement morphologies of structures were coupled with time-correlated data. Polymeric beads and Alexa Fluor 594-phalloidin labeled cellular actin structures of cultured cells were imaged below the diffraction limit using stimulated emission depletion to resolve structures to ≈40nm. Lifetime imaging revealed a 2.0 ± 0.1 ns lifetime for fluorescently-labeled beads in confocal and depletion imaging modes. Depletion imaging was also able to display a change of 2.2 to 2.9 ns for different regions of the cellular actin network of cultured cells with a possible difference in lifetime caused by tryptophan quenching of the dye. Subdiffraction imaging with a resolution of ≈40 nm was also accomplished using luminescence depletion of photostable giant CdSe/14CdS nanocrystal quantum dots in air. Nanocrystal quantum dots, typically not prone to depletion, exhibited this phenomenon when excited with an energy of 50 pJ and 2 nJ of depletion energy. Luminescence depletion required half the energy compared to stimulated emission depletion to achieve the same resolution limit. The luminescence was depleted by as much as ≈92% with no observable photobleaching. Raman measurements of polymer films were performed with 532-nm laser illumination using scanning angle and conventional 180° backscattering modes to determine chemical information. The scanning angle mode achieved an angle resolution of 0.09° and was used to probe a thin layer of polystyrene as well as a diblock copolymer of polystyrene and poly(3-hexylthiophene-2,5-diyl). Enhancements to the Raman signals at selected angles lower than the critical angle for total internal reflection

  1. Overview and Challenges of Thin Film Solar Electric Technologies

    SciTech Connect

    Ullal, H. S.

    2008-12-01

    In this paper, we report on the significant progress made worldwide by thin-film solar cells, namely, amorphous silicon (a-Si), cadmium telluride (CdTe), and copper indium gallium diselenide (CIGS). Thin-film photovoltaic (PV) technology status is also discussed in detail. In addition, R&D and technology challenges in all three areas are elucidated. The worldwide estimated projection for thin-film PV technology production capacity announcements are estimated at more than 5000 MW by 2010.

  2. NREL: Photovoltaics Research - Engineering

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    and Reliability team serves to improve PV technologies. Printable Version Photovoltaics Research Home Silicon Polycrystalline Thin Films Multijunctions New Materials,...

  3. Fiber-fed time-resolved photoluminescence for reduced process feedback time on thin-film photovoltaics

    SciTech Connect

    Repins, I. L.; Egaas, B.; Mansfield, L. M.; Contreras, M. A.; Beall, C.; Glynn, S.; Carapella, J.; Kuciauskas, D.; Muzzillo, C. P.

    2015-01-15

    Fiber-fed time-resolved photoluminescence is demonstrated as a tool for immediate process feedback after deposition of the absorber layer for CuIn{sub x}Ga{sub 1-x}Se{sub 2} and Cu{sub 2}ZnSnSe{sub 4} photovoltaic devices. The technique uses a simplified configuration compared to typical laboratory time-resolved photoluminescence in the delivery of the exciting beam, signal collection, and electronic components. Correlation of instrument output with completed device efficiency is demonstrated over a large sample set. The extraction of the instrument figure of merit, depending on both the initial luminescence intensity and its time decay, is explained and justified. Limitations in the prediction of device efficiency by this method, including surface effect, are demonstrated and discussed.

  4. Sustainable Retrofit of Residential Roofs Using Metal Roofing Panels, Thin-Film Photovoltaic Laminates, and PCM Heat Sink Technology

    SciTech Connect

    Kosny, Jan; Miller, William A; Childs, Phillip W; Biswas, Kaushik

    2011-01-01

    During September-October 2009, research teams representing Metal Construction Association (the largest North American trade association representing metal building manufacturers, builders, and material suppliers), CertainTeed (one of the largest U.S. manufacturers of thermal insulation and building envelope materials), Unisolar (largest U.S. producer of amorphous silicone photo-voltaic (PV) laminates), Phase Change Energy (manufacturer of bio-based PCM), and Oak Ridge National Laboratory (ORNL) installed three experimental attics utilizing different roof retrofit strategies in the ORNL campus. The main goal of this project was experimental evaluation of a newly-developed sustainable re-roofing technology utilizing amorphous silicone PV laminates integrated with metal roof and PCM heat sink. The experimental attic with PV laminate was expected to work during the winter time as a passive solar collector with PCM storing solar heat, absorbed during the day, and increasing overall attic air temperature during the night.

  5. Thin Film Electronic Devices with Conductive and Transparent Gas and

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Moisture Permeation Barriers - Energy Innovation Portal Solar Photovoltaic Solar Photovoltaic Electricity Transmission Electricity Transmission Advanced Materials Advanced Materials Find More Like This Return to Search Thin Film Electronic Devices with Conductive and Transparent Gas and Moisture Permeation Barriers National Renewable Energy Laboratory Contact NREL About This Technology Technology Marketing Summary Transparent conducting (TC) materials are extensively used in electronics and

  6. Photovoltaic manufacturing cost and throughput improvements for thin-film CIGS-based modules: Phase 1 technical report, July 1998--July 1999

    SciTech Connect

    Wiedeman, S.; Wendt, R.G.

    2000-03-01

    The primary objectives of the Global Solar Energy (GSE) Photovoltaic Manufacturing Technology (PVMaT) subcontract are directed toward reducing cost and expanding the production rate of thin-film CuInGaSe{sub 2} (CIGS)-based PV modules on flexible substrates. Improvements will be implemented in monolithic integration, CIGS deposition, contact deposition, and in-situ CIGS control and monitoring. In Phase 1, GSE has successfully attacked many of the highest risk aspects of each task. All-laser, selective scribing processes for CIGS have been developed, and many end-of-contract goals for scribing speed have been exceeded in the first year. High-speed ink-jet deposition of insulating material in the scribes now appears to be a viable technique, again exceeding some end-of-contract goals in the first year. Absorber deposition of CIGS was reduced corresponding to throughput speeds of up to 24-in/min, also exceeding an end-of-contract goal. Alternate back-contact materials have been identified that show potential as candidates for replacement of higher-cost molybdenum, and a novel, real-time monitoring technique (parallel-detector spectroscopic ellipsometry) has shown remarkable sensitivity to relevant properties of the CIGS absorber layer for use as a diagnostic tool. Currently, one of the bilayers has been baselined by GSE for flexible CIGS on polymeric substrates. Resultant back-contacts meet sheet-resistance goals and exhibit much less intrinsic stress than Mo. CIGS has been deposited, and resultant devices are comparable in performance to pure Mo back-contacts. Debris in the chamber has been substantially reduced, allowing longer roll-length between system cleaning.

  7. Epitaxial thin films

    DOEpatents

    Hunt, Andrew Tye; Deshpande, Girish; Lin, Wen-Yi; Jan, Tzyy-Jiuan

    2006-04-25

    Epitatial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separation membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin films for electrolytes and electrode formation in SOFCs results in densification for pore-free and ideal gain boundary/interface microstructure. Gas separation membranes for the production of oxygen and hydrogen are also disclosed. These semipermeable membranes are formed by high-quality, dense, gas-tight, pinhole free sub-micro scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are also taught herein. Capacitors are utilized according to their capacitance values which are dependent on their physical structure and dielectric permittivity. The epitaxial thin films of the current invention form low-loss dielectric layers with extremely high permittivity. This high permittivity allows for the formation of capacitors that can have their capacitance adjusted by applying a DC bias between their electrodes.

  8. Integrated optical and electrical modeling of plasmon-enhanced thin film photovoltaics: A case-study on organic devices

    SciTech Connect

    Rourke, Devin; Ahn, Sungmo; Nardes, Alexandre M.; Lagemaat, Jao van de; Kopidakis, Nikos; Park, Wounjhang

    2014-09-21

    The nanoscale light control for absorption enhancement of organic photovoltaic (OPV) devices inevitably produces strongly non-uniform optical fields. These non-uniformities due to the localized optical modes are a primary route toward absorption enhancement in OPV devices. Therefore, a rigorous modeling tool taking into account the spatial distribution of optical field and carrier generation is necessary. Presented here is a comprehensive numerical model to describe the coupled optical and electrical behavior of plasmon-enhanced polymer:fullerene bulk heterojunction (BHJ) solar cells. In this model, a position-dependent electron-hole pair generation rate that could become highly non-uniform due to photonic nanostructures is directly calculated from the optical simulations. By considering the absorption and plasmonic properties of nanophotonic gratings included in two different popular device architectures, and applying the Poisson, current continuity, and drift/diffusion equations, the model predicts quantum efficiency, short-circuit current density, and desired carrier mobility ratios for bulk heterojunction devices incorporating nanostructures for light management. In particular, the model predicts a significant degradation of device performance when the carrier species with lower mobility are generated far from the collecting electrode. Consequently, an inverted device architecture is preferred for materials with low hole mobility. This is especially true for devices that include plasmonic nanostructures. Additionally, due to the incorporation of a plasmonic nanostructure, we use simulations to theoretically predict absorption band broadening of a BHJ into energies below the band gap, resulting in a 4.8% increase in generated photocurrent.

  9. Thin-film optical initiator

    DOEpatents

    Erickson, Kenneth L.

    2001-01-01

    A thin-film optical initiator having an inert, transparent substrate, a reactive thin film, which can be either an explosive or a pyrotechnic, and a reflective thin film. The resultant thin-film optical initiator system also comprises a fiber-optic cable connected to a low-energy laser source, an output charge, and an initiator housing. The reactive thin film, which may contain very thin embedded layers or be a co-deposit of a light-absorbing material such as carbon, absorbs the incident laser light, is volumetrically heated, and explodes against the output charge, imparting about 5 to 20 times more energy than in the incident laser pulse.

  10. NMR characterization of thin films

    DOEpatents

    Gerald II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

    2010-06-15

    A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

  11. NMR characterization of thin films

    DOEpatents

    Gerald, II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

    2008-11-25

    A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

  12. Integrated optical and electrical modeling of plasmon-enhanced thin film photovoltaics: A case-study on organic devices

    SciTech Connect

    Rourke, D; Ahn, S; Nardes, AM; van de Lagemaat, J; Kopidakis, N; Park, W

    2014-09-21

    The nanoscale light control for absorption enhancement of organic photovoltaic (OPV) devices inevitably produces strongly non-uniform optical fields. These non-uniformities due to the localized optical modes are a primary route toward absorption enhancement in OPV devices. Therefore, a rigorous modeling tool taking into account the spatial distribution of optical field and carrier generation is necessary. Presented here is a comprehensive numerical model to describe the coupled optical and electrical behavior of plasmon-enhanced polymer: fullerene bulk heterojunction (BHJ) solar cells. In this model, a position-dependent electron-hole pair generation rate that could become highly non-uniform due to photonic nanostructures is directly calculated from the optical simulations. By considering the absorption and plasmonic properties of nanophotonic gratings included in two different popular device architectures, and applying the Poisson, current continuity, and drift/diffusion equations, the model predicts quantum efficiency, short-circuit current density, and desired carrier mobility ratios for bulk heterojunction devices incorporating nanostructures for light management. In particular, the model predicts a significant degradation of device performance when the carrier species with lower mobility are generated far from the collecting electrode. Consequently, an inverted device architecture is preferred for materials with low hole mobility. This is especially true for devices that include plasmonic nanostructures. Additionally, due to the incorporation of a plasmonic nanostructure, we use simulations to theoretically predict absorption band broadening of a BHJ into energies below the band gap, resulting in a 4.8% increase in generated photocurrent. (C) 2014 AIP Publishing LLC.

  13. Multiferroic oxide thin films and heterostructures

    SciTech Connect

    Lu, Chengliang E-mail: Tao.Wu@kaust.edu.sa; Hu, Weijin; Wu, Tom E-mail: Tao.Wu@kaust.edu.sa; Tian, Yufeng

    2015-06-15

    Multiferroic materials promise a tantalizing perspective of novel applications in next-generation electronic, memory, and energy harvesting technologies, and at the same time they also represent a grand scientific challenge on understanding complex solid state systems with strong correlations between multiple degrees of freedom. In this review, we highlight the opportunities and obstacles in growing multiferroic thin films with chemical and structural integrity and integrating them in functional devices. Besides the magnetoelectric effect, multiferroics exhibit excellent resistant switching and photovoltaic properties, and there are plenty opportunities for them to integrate with other ferromagnetic and superconducting materials. The challenges include, but not limited, defect-related leakage in thin films, weak magnetism, and poor control on interface coupling. Although our focuses are Bi-based perovskites and rare earth manganites, the insights are also applicable to other multiferroic materials. We will also review some examples of multiferroic applications in spintronics, memory, and photovoltaic devices.

  14. Thin film superconductor magnetic bearings

    DOEpatents

    Weinberger, Bernard R.

    1995-12-26

    A superconductor magnetic bearing includes a shaft (10) that is subject to a load (L) and rotatable around an axis of rotation, a magnet (12) mounted to the shaft, and a stator (14) in proximity to the shaft. The stator (14) has a superconductor thin film assembly (16) positioned to interact with the magnet (12) to produce a levitation force on the shaft (10) that supports the load (L). The thin film assembly (16) includes at least two superconductor thin films (18) and at least one substrate (20). Each thin film (18) is positioned on a substrate (20) and all the thin films are positioned such that an applied magnetic field from the magnet (12) passes through all the thin films. A similar bearing in which the thin film assembly (16) is mounted on the shaft (10) and the magnet (12) is part of the stator (14) also can be constructed.

  15. Photovoltaic Films - Energy Innovation Portal

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    The LANL solar power portfolio includes breakthrough technologies for reducing photovoltaic solar cell manufacturing costs, reducing capital expenditures, reducing the dependence ...

  16. Thin film composite electrolyte

    DOEpatents

    Schucker, Robert C. (The Woodlands, TX)

    2007-08-14

    The invention is a thin film composite solid (and a means for making such) suitable for use as an electrolyte, having a first layer of a dense, non-porous conductive material; a second layer of a porous ionic conductive material; and a third layer of a dense non-porous conductive material, wherein the second layer has a Coefficient of thermal expansion within 5% of the coefficient of thermal expansion of the first and third layers.

  17. Electrochromic-photovoltaic film for light-sensitive control of optical transmittance

    DOEpatents

    Branz, Howard M.; Crandall, Richard S.; Tracy, C. Edwin

    1994-01-01

    A variable transmittance optical component includes an electrochromic material and a photovoltaic device-type thin film solar cell deposited in a tandem type, monolithic single coating over the component. A bleed resistor of a predetermined value is connected in series across the electrochromic material and photovoltaic device controlling the activation and deactivation of the electrochromic material. The electrical conductivity between the electrochromic material and the photovoltaic device is enhanced by interposing a transparent electrically conductive layer.

  18. Electrochromic-photovoltaic film for light-sensitive control of optical transmittance

    DOEpatents

    Branz, H.M.; Crandall, R.S.; Tracy, C.E.

    1994-12-27

    A variable transmittance optical component includes an electrochromic material and a photovoltaic device-type thin film solar cell deposited in a tandem type, monolithic single coating over the component. A bleed resistor of a predetermined value is connected in series across the electrochromic material and photovoltaic device controlling the activation and deactivation of the electrochromic material. The electrical conductivity between the electrochromic material and the photovoltaic device is enhanced by interposing a transparent electrically conductive layer. 5 figures.

  19. NREL: Photovoltaics Research -Kent Terwilliger

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    for: Troubleshooting and repairing environmental test chambers. Printable Version Photovoltaics Research Home Silicon Polycrystalline Thin Films Multijunctions New Materials,...

  20. NREL: Photovoltaics Research - Greg Perrin

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    maintenance, and repair; machining and other lab support. Printable Version Photovoltaics Research Home Silicon Polycrystalline Thin Films Multijunctions New Materials,...

  1. Photovoltaic Silicon Cell Basics | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    ... More Information Learn more about these solar cell materials: Polycrystalline Thin Films Single-Crystalline Thin Films Addthis Related Articles Photovoltaic Cell Material Basics ...

  2. Thin film hydrogen sensor

    DOEpatents

    Lauf, Robert J.; Hoffheins, Barbara S.; Fleming, Pamela H.

    1994-01-01

    A hydrogen sensor element comprises an essentially inert, electrically-insulating substrate having a thin-film metallization deposited thereon which forms at least two resistors on the substrate. The metallization comprises a layer of Pd or a Pd alloy for sensing hydrogen and an underlying intermediate metal layer for providing enhanced adhesion of the metallization to the substrate. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors, and at least one of the resistors is left uncovered. The difference in electrical resistances of the covered resistor and the uncovered resistor is related to hydrogen concentration in a gas to which the sensor element is exposed.

  3. CuAl{sub x}Ga{sub 1−x}Se{sub 2} thin films for photovoltaic applications: Optical and compositional analysis

    SciTech Connect

    López-García, J.; Maffiotte, C.; Guillén, C.; Herrero, J.

    2013-03-15

    Highlights: ► Wide band gap CAGS thin films have been obtained by selenization of evaporated metallic precursors. ► Direct nonlinear dependence of the band gap energy with the Al/(Al + Ga) ratio is found. ► The bowing parameter decreases when the CAGS film thickness increases. ► The Cu at% remains constant in depth, together with some Al, Ga and Se gradients. ► Surface is strongly oxidized but the oxidation is relatively low in bulk. - Abstract: Wide-band gap chalcopyrite semiconductors have a great interest due to their potential application in multi-junction thin film solar cells or as window layers. Polycrystalline CuAl{sub x}Ga{sub 1−x}Se{sub 2} (CAGS) thin films have been prepared by selenization of evaporated metallic precursor layers on bare and Mo-coated soda lime glass substrates. The optical properties of CAGS films of 2 thicknesses have been analyzed by spectrophotometry in the visible-infrared (VIS-IR) and the compositional characteristics have been studied by energy dispersive analysis of X-rays (EDAX) and X-ray photoelectron spectroscopy (XPS). The optical transmission increases and the band gap energy shifts toward higher values as the Al content increases, which indicates the partial substitution of Ga by Al. The dependence of the band gap with the composition has resulted to be nonlinear and a bowing parameter of b = 0.62 and b = 0.54 for 0.6 μm and 1.1 μm-CAGS samples, respectively, has been obtained. XPS data have shown an Al, Ga and Se composition gradient in depth and a surface strongly oxidized. However, XPS reveals that the Cu composition remains constant in depth and the oxidation is relatively low in bulk increasing slightly in the interface with Mo/SLG. Moreover, samples with high Al content reveal a higher contribution of CuO in depth.

  4. Effects of diethanolamine on solgelprocessed Cu{sub 2}ZnSnS{sub 4} photovoltaic absorber thin films

    SciTech Connect

    Kahraman, S. etinkaya, S.; etinkara, H.A.; Gder, H.S.

    2014-02-01

    Highlights: DEA content significantly affected the crystal structure and the phase purity. The films crystallite sizes increased with increasing DEA content. Two different impurity levels were found for each film via R-T characteristics. Under different illuminations, the n-Si/CZTS exhibited good photo-response. The light on/off current ratios confirmed the photo-sensitivity of the junction. - Abstract: As a promising solar absorber, the Cu{sub 2}ZnSnS{sub 4} compound has been popular recently for the production of green and economical thin-film solar cells owing to the abundancy and non-toxicity of all the constituents. In this study, we have produced Cu{sub 2}ZnSnS{sub 4} films via the solgel technique. As a stabilizer, the effects of the diethanolamine on the properties of the films were investigated. The amount of diethanolamine significantly affected the crystal structure, crystallite sizes and phase purity of the films. X-ray diffraction and Raman spectroscopy analyses confirmed the formation of phase-pure CZTS films. It was found that the film produced by using 2 ml of diethanolamine in sol exhibited pure CZTS phase, compact and dense morphology and enhanced photo-sensitivity. Light on/off current ratio of the n-Si/Cu{sub 2}ZnSnS{sub 4} junction was found to be 47 under 100 mW/cm{sup 2} of illumination. Electrical activation energies of the films were investigated and the variations were attributed to delocalized phonon states generating from the presence of other phases and lattice defects.

  5. Progress and issues in polycrystalline thin-film PV technologies

    SciTech Connect

    Zweibel, K.; Ullal, H.S.; Roedern, B. von

    1996-05-01

    Substantial progress has occurred in polycrystalline thin-film photovoltaic technologies in the past 18 months. However, the transition to first-time manufacturing is still under way, and technical problems continue. This paper focuses on the promise and the problems of the copper indium diselenide and cadmium telluride technologies, with an emphasis on continued R&D needs for the near-term transition to manufacturing and for next-generation improvements. In addition, it highlights the joint R&D efforts being performed in the U.S. Department of Energy/National Renewable Energy Laboratory Thin-Film Photovoltaic Partnership Program.

  6. Photovoltaic devices comprising cadmium stannate transparent conducting films and method for making

    DOEpatents

    Wu, X.; Coutts, T.J.; Sheldon, P.; Rose, D.H.

    1999-07-13

    A photovoltaic device is disclosed having a substrate, a layer of Cd[sub 2]SnO[sub 4] disposed on said substrate as a front contact, a thin film comprising two or more layers of semiconductor materials disposed on said layer of Cd[sub 2]SnO[sub 4], and an electrically conductive film disposed on said thin film of semiconductor materials to form a rear electrical contact to said thin film. The device is formed by RF sputter coating a Cd[sub 2]SnO[sub 4] layer onto a substrate, depositing a thin film of semiconductor materials onto the layer of Cd[sub 2]SnO[sub 4], and depositing an electrically conductive film onto the thin film of semiconductor materials. 10 figs.

  7. Photovoltaic devices comprising cadmium stannate transparent conducting films and method for making

    DOEpatents

    Wu, Xuanzhi; Coutts, Timothy J.; Sheldon, Peter; Rose, Douglas H.

    1999-01-01

    A photovoltaic device having a substrate, a layer of Cd.sub.2 SnO.sub.4 disposed on said substrate as a front contact, a thin film comprising two or more layers of semiconductor materials disposed on said layer of Cd.sub.2 SnO.sub.4, and an electrically conductive film disposed on said thin film of semiconductor materials to form a rear electrical contact to said thin film. The device is formed by RF sputter coating a Cd.sub.2 SnO.sub.4 layer onto a substrate, depositing a thin film of semiconductor materials onto the layer of Cd.sub.2 SnO.sub.4, and depositing an electrically conductive film onto the thin film of semiconductor materials.

  8. Thin film ion conducting coating

    DOEpatents

    Goldner, Ronald B.; Haas, Terry; Wong, Kwok-Keung; Seward, George

    1989-01-01

    Durable thin film ion conducting coatings are formed on a transparent glass substrate by the controlled deposition of the mixed oxides of lithium:tantalum or lithium:niobium. The coatings provide durable ion transport sources for thin film solid state storage batteries and electrochromic energy conservation devices.

  9. Superhydrophobic Transparent Glass Thin Films - Energy Innovation Portal

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Solar Thermal Solar Thermal Solar Photovoltaic Solar Photovoltaic Industrial Technologies Industrial Technologies Early Stage R&D Early Stage R&D Advanced Materials Advanced Materials Find More Like This Return to Search Superhydrophobic Transparent Glass Thin Films Oak Ridge National Laboratory Contact ORNL About This Technology Technology Marketing SummaryGlass used in building materials (curtain walls), windshields, goggles, glasses, optical lenses, and similar applications must be

  10. Synthesis of thin films and materials utilizing a gaseous catalyst

    SciTech Connect

    Morse, Daniel E; Schwenzer, Birgit; Gomm, John R; Roth, Kristian M; Heiken, Brandon; Brutchey, Richard

    2013-10-29

    A method for the fabrication of nanostructured semiconducting, photoconductive, photovoltaic, optoelectronic and electrical battery thin films and materials at low temperature, with no molecular template and no organic contaminants. High-quality metal oxide semiconductor, photovoltaic and optoelectronic materials can be fabricated with nanometer-scale dimensions and high dopant densities through the use of low-temperature biologically inspired synthesis routes, without the use of any biological or biochemical templates.

  11. American Photovoltaics LP | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Photovoltaics LP Place: Houston, Texas Product: Manufactures and markets thin-film photovoltaic modules. Coordinates: 29.76045, -95.369784 Show Map Loading map......

  12. Earth-abundant semiconductors for photovoltaic applications ...

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Earth-abundant semiconductors for photovoltaic applications Thin film photovoltaics (solar cells) has the potential to revolutionize our energy landscape by producing clean,...

  13. Fundamental Materials Research and Advanced Process Development for Thin-Film CIS-Based Photovoltaics: Final Technical Report, 2 October 2001 - 30 September 2005

    SciTech Connect

    Anderson, T. J.; Li, S. S.; Crisalle, O. D.; Craciun, V.

    2006-09-01

    The objectives for this thin-film copper-indium-diselenide (CIS) solar cell project cover the following areas: Develop and characterize buffer layers for CIS-based solar cell; grow and characterize chemical-bath deposition of Znx Cd1-xS buffer layers grown on CIGS absorbers; study effects of buffer-layer processing on CIGS thin films characterized by the dual-beam optical modulation technique; grow epitaxial CuInSe2 at high temperature; study the defect structure of CGS by photoluminescence spectroscopy; investigate deep-level defects in Cu(In,Ga)Se2 solar cells by deep-level transient spectroscopy; conduct thermodynamic modeling of the isothermal 500 C section of the Cu-In-Se system using a defect model; form alpha-CuInSe2 by rapid thermal processing of a stacked binary compound bilayer; investigate pulsed non-melt laser annealing on the film properties and performance of Cu(In,Ga)Se2 solar cells; and conduct device modeling and simulation of CIGS solar cells.

  14. Innovative Thin Films LLC | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Thin Films LLC Place: Toledo, Ohio Zip: 43607 Product: Provider of altnernative energy thin film deposition technology. Coordinates: 46.440613, -122.847838 Show Map Loading...

  15. Thin Film Solar Technologies | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    help OpenEI by expanding it. Thin Film Solar Technologies is a company located in South Africa . References "Thin Film Solar Technologies" Retrieved from "http:...

  16. Thin film hydrogen sensor

    DOEpatents

    Lauf, R.J.; Hoffheins, B.S.; Fleming, P.H.

    1994-11-22

    A hydrogen sensor element comprises an essentially inert, electrically-insulating substrate having a thin-film metallization deposited thereon which forms at least two resistors on the substrate. The metallization comprises a layer of Pd or a Pd alloy for sensing hydrogen and an underlying intermediate metal layer for providing enhanced adhesion of the metallization to the substrate. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors, and at least one of the resistors is left uncovered. The difference in electrical resistances of the covered resistor and the uncovered resistor is related to hydrogen concentration in a gas to which the sensor element is exposed. 6 figs.

  17. Ferromagnetic thin films

    DOEpatents

    Krishnan, K.M.

    1994-12-20

    A ferromagnetic [delta]-Mn[sub 1[minus]x]Ga[sub x] thin film having perpendicular anisotropy is described which comprises: (a) a GaAs substrate, (b) a layer of undoped GaAs overlying said substrate and bonded thereto having a thickness ranging from about 50 to about 100 nanometers, (c) a layer of [delta]-Mn[sub 1[minus]x]Ga[sub x] overlying said layer of undoped GaAs and bonded thereto having a thickness ranging from about 20 to about 30 nanometers, and (d) a layer of GaAs overlying said layer of [delta]-Mn[sub 1[minus]x]Ga[sub x] and bonded thereto having a thickness ranging from about 2 to about 5 nanometers, wherein x is 0.4[+-]0.05. 7 figures.

  18. Electrochemical photovoltaic cell having ternary alloy film

    DOEpatents

    Russak, Michael A.

    1984-01-01

    A thin film compound semiconductor electrode comprising CdSe.sub.1-x Te.sub.x (0.ltoreq.x.ltoreq.1) is deposited on a transparent conductive substrate. An electrolyte contacts the film to form a photoactive site. The semiconductor material has a narrow energy bandgap permitting high efficiency for light conversion. The film may be fabricated by: (1) co-evaporation of two II-VI group compounds with a common cation, or (2) evaporation of three elements, concurrenty.

  19. Flexible Thin-Film Silicon Solar Cells

    SciTech Connect

    Vijh, Aarohi; Cao, Simon; Mohring, Brad

    2014-01-11

    High fuel costs, environmental concerns and issues of national energy security have brought increasing attention to a distributed generation program for electricity based on solar technology. Rooftop photovoltaic (PV) systems provide distributed generation since the power is consumed at the point of production, thus eliminating the need for costly additional transmission lines. However, most current photovoltaic modules are heavy and require a significant amount of labor and accessory hardware such as mounting frames for installation on rooftops. This makes rooftop systems impractical or cost prohibitive in many instances. Under this project, Xunlight has advanced its manufacturing process for the production of lightweight, flexible thin-film silicon based photovoltaic modules, and has enhanced the reliability and performance of Xunlight’s products. These modules are easily unrolled and adhered directly to standard commercial roofs without mounting structures or integrated directly into roofing membrane materials for the lowest possible installation costs on the market. Importantly, Xunlight has now established strategic alliances with roofing material manufacturers and other OEMs for the development of building integrated photovoltaic roofing and other PV-enabled products, and has deployed its products in a number of commercial installations with these business partners.

  20. Density Profiles in Sputtered Molybdenum Thin Films and Their Effects on Sodium Diffusion in Cu(InxGa1-x)Se2 Photovoltaics

    SciTech Connect

    Li, J.; Glynn, S.; Mansfield, L.; Young, M.; Yan, Y.; Contreras, M.; Noufi, R.; Terry Jr., F. L.; Levi, D.

    2011-01-01

    Molybdenum (Mo) thin films were sputtered onto soda lime glass (SLG) substrates. The main variable in the deposition parameters, the argon (Ar) pressure p{sub Ar}, was varied in the range of 6-20 mTorr. Ex situ spectroscopic ellipsometry (SE) was performed to find out that the dielectric functions {var_epsilon} of the Mo films were strongly dependent on p{sub Ar}, indicating a consistent and significant decrease in the Mo film density {rho}{sub Mo} with increasing p{sub Ar}. This trend was confirmed by high-angle-annular-dark-field scanning transmission electron microscopy. {var_epsilon} of Mo was then found to be correlated with secondary ion mass spectroscopy profiles of Sodium (Na) in the Cu(In{sub x}Ga{sub 1-x})Se{sub 2} (CIGS) layer grown on top of Mo/SLG. Therefore, in situ optical diagnostics can be applied for process monitoring and optimization in the deposition of Mo for CIGS solar cells. Such capability is demonstrated with simulated optical transmission and reflectance of variously polarized incident light, using {var_epsilon} deduced from SE.

  1. Ambient CdCl{sub 2} treatment on CdS buffer layer for improved performance of Sb{sub 2}Se{sub 3} thin film photovoltaics

    SciTech Connect

    Wang, Liang; Luo, Miao; Qin, Sikai; Liu, Xinsheng; Chen, Jie; Yang, Bo; Leng, Meiying; Xue, Ding-Jiang; Zhou, Ying; Gao, Liang; Song, Haisheng; Tang, Jiang

    2015-10-05

    Antimony selenide (Sb{sub 2}Se{sub 3}) is appealing as a promising light absorber because of its intrinsically benign grain boundaries, suitable band gap (∼1.1 eV), strong absorption coefficient, and relatively environmentally friendly constituents. Recently, we achieved a certified 5.6% efficiency Sb{sub 2}Se{sub 3} thin film solar cell with the assistance of ambient CdCl{sub 2} treatment on the CdS buffer layer. Here, we focused on investigating the underlying mechanism from a combined materials and device physics perspective applying current density-voltage (J-V) fitting analysis, atomic force microscope, X-ray photoelectron spectroscopy, fluorescence, and UV–Vis transmission spectroscopy. Our results indicated that ambient CdCl{sub 2} treatment on CdS film not only improved CdS grain size and quality, but also incorporated Cl and more O into the film, both of which can significantly improve the heterojunction quality and device performance of CdS/Sb{sub 2}Se{sub 3} solar cells.

  2. CuInSe/sub 2/-based photoelectrochemical cells: their use in characterization of thin CuInSe/sub 2/ films, and as photovoltaic cells per se

    SciTech Connect

    Cahen, D.; Chen, Y.W.; Ireland, P.J.; Noufi, R.; Turner, J.A.; Rincon, C.; Bachmann, K.J.

    1984-05-01

    Photoelectrochemistry has been employed to characterize the p-CuInSe/sub 2/ component of the CdS/CuInSe/sub 2/ on-metal and a nonaqueous electrolyte containing a redox couple not specifically adsorbed onto the semiconductor, we can test the films for photovoltaic activity and obtain effective electronic properties of them, before CdS deposition, in a nondestructive manner. Electrochemical decomposition of CuInSe/sub 2/ was investigated in acetonitrile solutions to determine the mechanism of decomposition (n and p) in the dark and under illumination. Electrochemical, solution chemical and surface analyses confirmed at the light-assisted decomposition of CuInSe/sub 2/ resulted in metal ions and elemental chalcogen. On the basis of the results from the electrochemical decomposition, and studies on the solid state chemistry of the (Cu/sub 2/Se)/sub x/(In/sub 2/Se/sub 3/)/sub 1-x/ system and surface analyses, the CuInSe/sub 2//polyiodide interface was stabilized and up to 11.7% conversion efficiencies were obtained.

  3. Simulation and optimization of ultra thin photovoltaics.

    SciTech Connect

    Cruz-Campa, Jose Luis

    2010-12-01

    Sandia National Laboratories (SNL) conducts pioneering research and development in Micro-Electro-Mechanical Systems (MEMS) and solar cell research. This dissertation project combines these two areas to create ultra-thin small-form-factor crystalline silicon (c-Si) solar cells. These miniature solar cells create a new class of photovoltaics with potentially novel applications and benefits such as dramatic reductions in cost, weight and material usage. At the beginning of the project, unusually low efficiencies were obtained in the research group. The intention of this research was thus to investigate the main causes of the low efficiencies through simulation, design, fabrication, and characterization. Commercial simulation tools were used to find the main causes of low efficiency. Once the causes were identified, the results were used to create improved designs and build new devices. In the simulations, parameters were varied to see the effect on the performance. The researched parameters were: resistance, wafer lifetime, contact separation, implant characteristics (size, dosage, energy, ratio between the species), contact size, substrate thickness, surface recombination, and light concentration. Out of these parameters, it was revealed that a high quality surface passivation was the most important for obtaining higher performing cells. Therefore, several approaches for enhancing the passivation were tried, characterized, and tested on cells. In addition, a methodology to contact and test the performance of all the cells presented in the dissertation under calibrated light was created. Also, next generation cells that could incorporate all the optimized layers including the passivation was designed, built, and tested. In conclusion, through this investigation, solar cells that incorporate optimized designs and passivation schemes for ultrathin solar cells were created for the first time. Through the application of the methods discussed in this document, the

  4. Vapor deposition of thin films

    SciTech Connect

    Smith, D.C.; Pattillo, S.G.; Laia, J.R. Jr.; Sattelberger, A.P.

    1990-10-05

    A highly pure thin metal film having a nanocrystalline structure and a process of preparing such highly pure thin metal films of, e.g., rhodium, iridium, molybdenum, tungsten, rhenium, platinum, or palladium by plasma assisted chemical vapor deposition of, e.g., rhodium(allyl){sub 3}, iridium(allyl){sub 3}, molybdenum(allyl){sub 4}, tungsten(allyl){sub 4}, rhenium (allyl){sub 4}, platinum(allyl){sub 2}, or palladium(allyl){sub 2} are disclosed. Additionally, a general process of reducing the carbon content of a metallic film prepared from one or more organometallic precursor compounds by plasma assisted chemical vapor deposition is disclosed.

  5. Vapor deposition of thin films

    DOEpatents

    Smith, David C. (Los Alamos, NM); Pattillo, Stevan G. (Los Alamos, NM); Laia, Jr., Joseph R. (Los Alamos, NM); Sattelberger, Alfred P. (Los Alamos, NM)

    1992-01-01

    A highly pure thin metal film having a nanocrystalline structure and a process of preparing such highly pure thin metal films of, e.g., rhodium, iridium, molybdenum, tungsten, rhenium, platinum, or palladium by plasma assisted chemical vapor deposition of, e.g., rhodium(allyl).sub.3, iridium(allyl).sub.3, molybdenum(allyl).sub.4, tungsten(allyl).sub.4, rhenium(allyl).sub.4, platinum(allyl).sub.2, or palladium(allyl).sub.2 are disclosed. Additionally, a general process of reducing the carbon content of a metallic film prepared from one or more organometallic precursor compounds by plasma assisted chemical vapor deposition is disclosed.

  6. NREL: Photovoltaics Research - News

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    For archived editions of the NCPV Hotline. See also PV events. Printable Version Photovoltaics Research Home Silicon Polycrystalline Thin Films Multijunctions New Materials,...

  7. NREL: Photovoltaics Research - Webmaster

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    reply. Your name: Your email address: Your message: Send Message Printable Version Photovoltaics Research Home Silicon Polycrystalline Thin Films Multijunctions New Materials,...

  8. NREL: Photovoltaics Research - Sara MacAlpine, Ph.D.

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    at the 39th IEEE Photovoltaic Specialists Conference (PVSC). Printable Version Photovoltaics Research Home Silicon Polycrystalline Thin Films Multijunctions New Materials,...

  9. Project Profile: Evaluating the Causes of Photovoltaics Cost...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    progress observed for photovoltaics (PV) over the past half century. Motivation Photovoltaic technologies, including silicon and thin film solar cells, have experienced ...

  10. Photovoltaic cell with thin CS layer

    DOEpatents

    Jordan, John F.; Albright, Scot P.

    1994-01-18

    An improved photovoltaic panel and method of forming a photovoltaic panel are disclosed for producing a high efficiency CdS/CdTe photovoltaic cell. The photovoltaic panel of the present invention is initially formed with a substantially thick Cds layer, and the effective thickness of the CdS layer is substantially reduced during regrowth to both form larger diameter CdTe crystals and substantially reduce the effective thickness of the C This invention was made with Government support under Subcontract No. ZL-7-06031-3 awarded by the Department of Energy. The Government has certain rights in this invention.

  11. Thin film-coated polymer webs

    DOEpatents

    Wenz, Robert P.; Weber, Michael F.; Arudi, Ravindra L.

    1992-02-04

    The present invention relates to thin film-coated polymer webs, and more particularly to thin film electronic devices supported upon a polymer web, wherein the polymer web is treated with a purifying amount of electron beam radiation.

  12. Low work function, stable thin films

    DOEpatents

    Dinh, Long N.; McLean, II, William; Balooch, Mehdi; Fehring, Jr., Edward J.; Schildbach, Marcus A.

    2000-01-01

    Generation of low work function, stable compound thin films by laser ablation. Compound thin films with low work function can be synthesized by simultaneously laser ablating silicon, for example, and thermal evaporating an alkali metal into an oxygen environment. For example, the compound thin film may be composed of Si/Cs/O. The work functions of the thin films can be varied by changing the silicon/alkali metal/oxygen ratio. Low work functions of the compound thin films deposited on silicon substrates were confirmed by ultraviolet photoelectron spectroscopy (UPS). The compound thin films are stable up to 500.degree. C. as measured by x-ray photoelectron spectroscopy (XPS). Tests have established that for certain chemical compositions and annealing temperatures of the compound thin films, negative electron affinity (NEA) was detected. The low work function, stable compound thin films can be utilized in solar cells, field emission flat panel displays, electron guns, and cold cathode electron guns.

  13. Thin films and uses

    DOEpatents

    Baskaran, Suresh; Graff, Gordon L.; Song, Lin

    1998-01-01

    The invention provides a method for synthesizing a titanium oxide-containing film comprising the following steps: (a) preparing an aqueous solution of a titanium chelate with a titanium molarity in the range of 0.01M to 0.6M. (b) immersing a substrate in the prepared solution, (c) decomposing the titanium chelate to deposit a film on the substrate. The titanium chelate maybe decomposed acid, base, temperature or other means. A preferred method provides for the deposit of adherent titanium oxide films from C2 to C5 hydroxy carboxylic acids. In another aspect the invention is a novel article of manufacture having a titanium coating which protects the substrate against ultraviolet damage. In another aspect the invention provides novel semipermeable gas separation membranes, and a method for producing them.

  14. Thin film polymeric gel electrolytes

    DOEpatents

    Derzon, Dora K.; Arnold, Jr., Charles; Delnick, Frank M.

    1996-01-01

    Novel hybrid thin film electrolyte, based on an organonitrile solvent system, which are compositionally stable, environmentally safe, can be produced efficiently in large quantity and which, because of their high conductivities .apprxeq.10.sup.-3 .OMEGA..sup.-1 cm.sup.-1 are useful as electrolytes for rechargeable lithium batteries.

  15. Thin film polymeric gel electrolytes

    DOEpatents

    Derzon, D.K.; Arnold, C. Jr.; Delnick, F.M.

    1996-12-31

    Novel hybrid thin film electrolytes, based on an organonitrile solvent system, which are compositionally stable, environmentally safe, can be produced efficiently in large quantity and which, because of their high conductivities {approx_equal}10{sup {minus}3}{Omega}{sup {minus}1} cm{sup {minus}1} are useful as electrolytes for rechargeable lithium batteries. 1 fig.

  16. Status of High Performance PV: Polycrystalline Thin-Film Tandems

    SciTech Connect

    Symko-Davies, M.

    2005-02-01

    The High-Performance Photovoltaic (HiPerf PV) Project was initiated by the U.S. Department of Energy to substantially increase the viability of photovoltaics (PV) for cost-competitive applications so that PV can contribute significantly to our energy supply and our environment. The HiPerf PV Project aims at exploring the ultimate performance limits of existing PV technologies, approximately doubling their sunlight-to-electricity conversion efficiencies during its course. This work includes bringing thin-film cells and modules toward 25% and 20% efficiencies, respectively, and developing multijunction concentrator cells and modules able to convert more than one-third of the sun's energy to electricity (i.e., 33% efficiency). This paper will address recent accomplishments of the NREL in-house research effort involving polycrystalline thin-film tandems, as well as the research efforts under way in the subcontracted area.

  17. Steering and Separating Excitons in Organic Thin Films and Devices |

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    MIT-Harvard Center for Excitonics Steering and Separating Excitons in Organic Thin Films and Devices October 26, 2010 at 3pm/36-428 Mark Thompson University of Southern California (USC) thompson abstract: We have taken a materials intensive approach to developing an understanding of the mechanism of photocurrent and photovoltage generation in organic photovoltaic devices (OPVs) and electroluminescence in organic LEDs (OLEDs). The exciton is a critical part of each of these processes, and

  18. Thin film buried anode battery

    DOEpatents

    Lee, Se-Hee; Tracy, C. Edwin; Liu, Ping

    2009-12-15

    A reverse configuration, lithium thin film battery (300) having a buried lithium anode layer (305) and process for making the same. The present invention is formed from a precursor composite structure (200) made by depositing electrolyte layer (204) onto substrate (201), followed by sequential depositions of cathode layer (203) and current collector (202) on the electrolyte layer. The precursor is subjected to an activation step, wherein a buried lithium anode layer (305) is formed via electroplating a lithium anode layer at the interface of substrate (201) and electrolyte film (204). The electroplating is accomplished by applying a current between anode current collector (201) and cathode current collector (202).

  19. NREL: Photovoltaics Research - Bill Marion

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    NREL Publications View NREL publications for this staff member. Printable Version Photovoltaics Research Home Silicon Polycrystalline Thin Films Multijunctions New Materials,...

  20. NREL: Photovoltaics Research - NCPV Hotline

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    | April-June | July-September | October-December Annual Index Printable Version Photovoltaics Research Home Silicon Polycrystalline Thin Films Multijunctions New Materials,...

  1. Insights on the influence of surface roughness on photovoltaic properties of state of the art copper indium gallium diselenide thin films solar cells

    SciTech Connect

    Jehl, Z.; Lincot, D.; Guillemoles, J. F.; Naghavi, N.; Bouttemy, M.; Gerard, I.; Etcheberry, A.; Voorwinden, G.; Powalla, M.

    2012-06-01

    The influence of Cu(In,Ga)Se{sub 2} (CIGSe) surface roughness on the photovoltaic parameters of state of the art devices is reported, highlighting the importance of the roughness of the as-grown CIGSe absorbers on solar cell efficiencies. As-grown CIGSe surface is progressively smoothed using a chemical etch, and characterized by SEM, AFM, XPS, {mu}-Raman spectroscopy, x-ray diffraction (XRD), and reflectivity. The decrease of roughness has no marked influence on crystal structure and surface composition of the absorber. The main effect is that the total reflectivity of the CIGSe surface increases with decreasing roughness. The samples are processed into solar cells and characterized by current-voltage measurements. While the open circuit voltage (V{sub oc}) and fill factor remain constant, the short circuit current (J{sub sc}) decreases markedly with decreasing roughness, resulting in a reduction of the solar cell efficiency from 14% down to 11%, which exceeds the expected decrease from increased reflectivity. Quantum efficiency and reflectivity measurements on complete cells are performed to analyze those effects. The influence of surface roughness on the theorical effective space charge region and diffusion length is based on a simple theoretical model. This paper discusses the comparison of CIGSe solar cells with n-i-p structures.

  2. Zinc oxide thin film acoustic sensor

    SciTech Connect

    Mohammed, Ali Jasim; Salih, Wafaa Mahdi; Hassan, Marwa Abdul Muhsien; Nusseif, Asmaa Deiaa; Kadhum, Haider Abdullah; Mansour, Hazim Louis

    2013-12-16

    This paper reports the implementation of (750 nm) thickness of Zinc Oxide (ZnO) thin film for the piezoelectric pressure sensors. The film was prepared and deposited employing the spray pyrolysis technique. XRD results show that the growth preferred orientation is the (002) plane. A polycrystalline thin film (close to mono crystallite like) was obtained. Depending on the Scanning Electron Microscopy photogram, the film homogeneity and thickness were shown. The resonance frequency measured (about 19 kHz) and the damping coefficient was calculated and its value was found to be about (2.5538), the thin film be haves as homogeneous for under and over damped. The thin film pressure sensing was approximately exponentially related with frequency, the thin film was observed to has a good response for mechanical stresses also it is a good material for the piezoelectric properties.

  3. Method of producing amorphous thin films

    DOEpatents

    Brusasco, Raymond M.

    1992-01-01

    Disclosed is a method of producing thin films by sintering which comprises: a. coating a substrate with a thin film of an inorganic glass forming parulate material possessing the capability of being sintered, and b. irridiating said thin film of said particulate material with a laser beam of sufficient power to cause sintering of said material below the temperature of liquidus thereof. Also disclosed is the article produced by the method claimed.

  4. Thin film solar energy collector

    DOEpatents

    Aykan, Kamran; Farrauto, Robert J.; Jefferson, Clinton F.; Lanam, Richard D.

    1983-11-22

    A multi-layer solar energy collector of improved stability comprising: (1) a substrate of quartz, silicate glass, stainless steel or aluminum-containing ferritic alloy; (2) a solar absorptive layer comprising silver, copper oxide, rhodium/rhodium oxide and 0-15% by weight of platinum; (3) an interlayer comprising silver or silver/platinum; and (4) an optional external anti-reflective coating, plus a method for preparing a thermally stable multi-layered solar collector, in which the absorptive layer is undercoated with a thin film of silver or silver/platinum to obtain an improved conductor-dielectric tandem.

  5. Fabrication of stable large-area thin-film CdTe photovoltaic modules. Annual subcontract report, 10 May 1992--9 May 1993

    SciTech Connect

    Nolan, J.F.; Meyers, P.V.

    1993-08-01

    This report highlights the progress made by Solar Cells, Inc. (SCI), in its program to produce 60-cm {times} 120-cm solar modules based on CdTe films. During the past year, confirmed efficiency has increased to 10.4% (active area) on a 1 cm{sup 2} cell, 9.8% (aperture area) on a 64-cm{sup 2} 8-cell submodule, and 6.6% (total area) on a 7200-cm{sup 2} module. A module measured in-house had a power output of 53 W, for a total-area efficiency of 7.4%. Average efficiency of modules produced is steadily increasing and standard deviation is decreasing; in a limited run of 12 modules, results were 6.3% ({plus_minus} 0.2%). Field testing has begun; a nominal 1-kW array of 24 modules was set up adjacent to SCI`s facilities. Analysis indicates that present modules are limited in efficiency by shunt resistance and optical absorption losses in the glass superstrate. Loss analysis of present devices allows us to project a module efficiency of 11.8%. A third generation deposition method -- atmospheric pressure elemental vapor deposition (APEVD) has been brought on-line and has produced good quality CdTe. In addition, SCI is expanding its proactive safety, health, environmental, and disposal program dealing with issues surrounding cadmium.

  6. Electrostatic thin film chemical and biological sensor

    DOEpatents

    Prelas, Mark A.; Ghosh, Tushar K.; Tompson, Jr., Robert V.; Viswanath, Dabir; Loyalka, Sudarshan K.

    2010-01-19

    A chemical and biological agent sensor includes an electrostatic thin film supported by a substrate. The film includes an electrostatic charged surface to attract predetermined biological and chemical agents of interest. A charge collector associated with said electrostatic thin film collects charge associated with surface defects in the electrostatic film induced by the predetermined biological and chemical agents of interest. A preferred sensing system includes a charge based deep level transient spectroscopy system to read out charges from the film and match responses to data sets regarding the agents of interest. A method for sensing biological and chemical agents includes providing a thin sensing film having a predetermined electrostatic charge. The film is exposed to an environment suspected of containing the biological and chemical agents. Quantum surface effects on the film are measured. Biological and/or chemical agents can be detected, identified and quantified based on the measured quantum surface effects.

  7. Thin films of mixed metal compounds

    SciTech Connect

    Mickelsen, Reid A.; Chen, Wen S.

    1985-01-01

    A compositionally uniform thin film of a mixed metal compound is formed by simultaneously evaporating a first metal compound and a second metal compound from independent sources. The mean free path between the vapor particles is reduced by a gas and the mixed vapors are deposited uniformly. The invention finds particular utility in forming thin film heterojunction solar cells.

  8. Partial Shading in Monolithic Thin Film PV Modules: Analysis...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Partial Shading in Monolithic Thin Film PV Modules: Analysis and Design Partial Shading in Monolithic Thin Film PV Modules: Analysis and Design Presented at the PV Module ...

  9. High Temperature Thin Film Polymer Dielectric Based Capacitors...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Thin Film Polymer Dielectric Based Capacitors for HEV Power Electronic Systems High Temperature Thin Film Polymer Dielectric Based Capacitors for HEV Power Electronic Systems 2009 ...

  10. Solvothermal Thin Film Deposition of Electron Blocking Layers...

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Solvothermal Thin Film Deposition of Electron Blocking Layers Home > Research > ANSER Research Highlights > Solvothermal Thin Film Deposition of Electron Blocking Layers...

  11. Thin-Film Reliability Trends Toward Improved Stability: Preprint

    SciTech Connect

    Jordan, D. C.; Kurtz, S. R.

    2011-07-01

    Long-term, stable performance of photovoltaic (PV) modules will be increasingly important to their successful penetration of the power grid. This paper summarizes more than 150 thin-film and more than 1700 silicon PV degradation rates (Rd) quoted in publications for locations worldwide. Partitioning the literature results by technology and date of installation statistical analysis shows an improvement in degradation rate especially for thin-film technologies in the last decade. A CIGS array deployed at NREL for more than 5 years that appears to be stable supports the literature trends. Indoor and outdoor data indicate undetectable change in performance (0.2+/-0.2 %/yr). One module shows signs of slight degradation from what appears to be an initial manufacturing defect, however it has not affected the overall system performance.

  12. Method of producing thin cellulose nitrate film

    DOEpatents

    Lupica, S.B.

    1975-12-23

    An improved method for forming a thin nitrocellulose film of reproducible thickness is described. The film is a cellulose nitrate film, 10 to 20 microns in thickness, cast from a solution of cellulose nitrate in tetrahydrofuran, said solution containing from 7 to 15 percent, by weight, of dioctyl phthalate, said cellulose nitrate having a nitrogen content of from 10 to 13 percent.

  13. NREL: Photovoltaics Research - Pholtovoltaic System Performance...

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Pholtovoltaic System Performance Data Photo looking north-northwest at solar panels aligned ... Printable Version Photovoltaics Research Home Polycrystalline Thin Films Multijunctions ...

  14. Sputtered Thin Film Photovoltaics - Energy Innovation Portal

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Energy Spurring Market Adoption of Energy Efficient Storm Windows Spurring Market Adoption of Energy Efficient Storm Windows June 20, 2016 - 12:53pm Addthis At the Energy Department's Pacific Northwest National Laboratory (PNNL), researchers are using two modular homes to test energy-efficient products and calculate their energy savings. Researchers test new technologies in the Experimental home (pictured above), while the Baseline home (not pictured) serves as a control and doesn’t get

  15. Charge carrier dynamics and recombination in graded band gap CuIn1-xGaxSe2 polycrystalline thin-film photovoltaic solar cell absorbers

    SciTech Connect

    Kuciauskas, Darius; Li, Jian V.; Contreras, Miguel A.; Pankow, Joel; Dippo, Patricia; Young, Matthew; Mansfield, Lorelle M.; Noufi, Rommel; Levi, Dean

    2013-01-01

    We report the results of spectroscopic time-resolved photoluminescence (TRPL) analysis for polycrystalline CuIn1-xGaxSe2 (CIGS) films. On the <5 ns time scale, we investigated minority carrier spatial redistribution from the initial absorption profile near the surface of the films to the conduction band minimum. Based on these data, the estimated minority carrier mobility is 75–230 cm2 V-1s-1. Full TRPL decays were analyzed using models for donor-acceptor pair (DAP) recombination. We estimated that the concentration of DAP recombination centers was 5×1015–1017cm-3. Data also show that Shockley-Reed-Hall and surface recombination are not significant for polycrystalline CIGS absorbers used in high-efficiency photovoltaic solar cells.

  16. Electrical contacts for a thin-film semiconductor device

    DOEpatents

    Carlson, David E.; Dickson, Charles R.; D'Aiello, Robert V.

    1989-08-08

    A method of fabricating spaced-apart back contacts on a thin film of semiconductor material by forming strips of buffer material on top of the semiconductor material in locations corresponding to the desired dividing lines between back contacts, forming a film of metal substantially covering the semiconductor material and buffer strips, and scribing portions of the metal film overlying the buffer strips with a laser without contacting the underlying semiconductor material to separate the metal layer into a plurality of back contacts. The buffer material serves to protect the underlying semiconductor material from being damaged during the laser scribing. Back contacts and multi-cell photovoltaic modules incorporating such back contacts also are disclosed.

  17. Spectroscopic ellipsometry characterization of thin-film silicon nitride

    SciTech Connect

    Jellison, G.E. Jr.; Modine, F.A.; Doshi, P.; Rohatgi, A.

    1997-05-01

    We have measured and analyzed the optical characteristics of a series of silicon nitride thin films prepared by plasma-enhanced chemical vapor deposition on silicon substrates for photovoltaic applications. Spectroscopic ellipsometry measurements were made by using a two-channel spectroscopic polarization modulator ellipsometer that measures N, S, and C data simultaneously. The data were fit to a model consisting of air / roughness / SiN / crystalline silicon. The roughness was modeled using the Bruggeman effective medium approximation, assuming 50% SiN, 50% voids. The optical functions of the SiN film were parameterized using a model by Jellison and Modine. All the {Chi}{sup 2} are near 1, demonstrating that this model works extremely well for all SiN films. The measured dielectric functions were used to make optimized SiN antireflection coatings for crystalline silicon solar cells.

  18. Polar Photovoltaics Co Ltd | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Polar Photovoltaics Co Ltd Jump to: navigation, search Name: Polar Photovoltaics Co Ltd Place: Bengbu, Anhui Province, China Zip: 233030 Product: A Chinese a-Si thin film PV cell...

  19. Canrom Photovoltaics Inc | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Canrom Photovoltaics Inc Jump to: navigation, search Name: Canrom Photovoltaics Inc Place: Niagara Falls, New York Zip: 14305 Sector: Solar Product: Developer of a thin-film CdTe...

  20. Structural characterization of thin film photonic crystals

    SciTech Connect

    Subramania, G.; Biswas, R.; Constant, K.; Sigalas, M. M.; Ho, K. M.

    2001-06-15

    We quantitatively analyze the structure of thin film inverse-opal photonic crystals composed of ordered arrays of air pores in a background of titania. Ordering of the sphere template and introduction of the titania background were performed simultaneously in the thin film photonic crystals. Nondestructive optical measurements of backfilling with high refractive index liquids, angle-resolved reflectivity, and optical spectroscopy were combined with band-structure calculations. The analysis reveals a thin film photonic crystal structure with a very high filling fraction (92{endash}94%) of air and a substantial compression along the c axis ({similar_to}22{endash}25%).

  1. Nanostructured Photovoltaics: - Energy Innovation Portal

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Solar Photovoltaic Solar Photovoltaic Find More Like This Return to Search Nanostructured Photovoltaics: Atomic Layer Deposition Thin Film Technology Enables Cost Effective Solar Cells Argonne National Laboratory Contact ANL About This Technology <p> Figure 1. Schematic illustration of an Argonne nanostructured photovoltaic device.</p> Figure 1. Schematic illustration of an Argonne nanostructured photovoltaic device. <p> Figure 2. ALD transparent conducting oxide coating on

  2. Ferromagnetic properties of fcc Gd thin films

    SciTech Connect

    Bertelli, T. P. Passamani, E. C.; Larica, C.; Nascimento, V. P.; Takeuchi, A. Y.

    2015-05-28

    Magnetic properties of sputtered Gd thin films grown on Si (100) substrates kept at two different temperatures were investigated using X-ray diffraction, ac magnetic susceptibility, and dc magnetization measurements. The obtained Gd thin films have a mixture of hcp and fcc structures, but with their fractions depending on the substrate temperature T{sub S} and film thickness x. Gd fcc samples were obtained when T{sub S} = 763 K and x = 10 nm, while the hcp structure was stabilized for lower T{sub S} (300 K) and thicker film (20 nm). The fcc structure is formed on the Ta buffer layer, while the hcp phase grows on the fcc Gd layer as a consequence of the lattice relaxation process. Spin reorientation phenomenon, commonly found in bulk Gd species, was also observed in the hcp Gd thin film. This phenomenon is assumed to cause the magnetization anomalous increase observed below 50 K in stressed Gd films. Magnetic properties of fcc Gd thin films are: Curie temperature above 300 K, saturation magnetization value of about 175 emu/cm{sup 3}, and coercive field of about 100 Oe at 300 K; features that allow us to classify Gd thin films, with fcc structure, as a soft ferromagnetic material.

  3. Permanent laser conditioning of thin film optical materials

    DOEpatents

    Wolfe, C. Robert; Kozlowski, Mark R.; Campbell, John H.; Staggs, Michael; Rainer, Frank

    1995-01-01

    The invention comprises a method for producing optical thin films with a high laser damage threshold and the resulting thin films. The laser damage threshold of the thin films is permanently increased by irradiating the thin films with a fluence below an unconditioned laser damage threshold.

  4. Permanent laser conditioning of thin film optical materials

    DOEpatents

    Wolfe, C.R.; Kozlowski, M.R.; Campbell, J.H.; Staggs, M.; Rainer, F.

    1995-12-05

    The invention comprises a method for producing optical thin films with a high laser damage threshold and the resulting thin films. The laser damage threshold of the thin films is permanently increased by irradiating the thin films with a fluence below an unconditioned laser damage threshold. 9 figs.

  5. Photoconductivity in reactively evaporated copper indium selenide thin films

    SciTech Connect

    Urmila, K. S. Asokan, T. Namitha Pradeep, B.; Jacob, Rajani; Philip, Rachel Reena

    2014-01-28

    Copper indium selenide thin films of composition CuInSe{sub 2} with thickness of the order of 130 nm are deposited on glass substrate at a temperature of 423 ±5 K and pressure of 10{sup −5} mbar using reactive evaporation, a variant of Gunther's three temperature method with high purity Copper (99.999%), Indium (99.999%) and Selenium (99.99%) as the elemental starting materials. X-ray diffraction (XRD) studies shows that the films are polycrystalline in nature having preferred orientation of grains along the (112) plane. The structural type of the film is found to be tetragonal with particle size of the order of 32 nm. The structural parameters such as lattice constant, particle size, dislocation density, number of crystallites per unit area and strain in the film are also evaluated. The surface morphology of CuInSe{sub 2} films are studied using 2D and 3D atomic force microscopy to estimate the grain size and surface roughness respectively. Analysis of the absorption spectrum of the film recorded using UV-Vis-NIR Spectrophotometer in the wavelength range from 2500 nm to cutoff revealed that the film possess a direct allowed transition with a band gap of 1.05 eV and a high value of absorption coefficient (α) of 10{sup 6} cm{sup −1} at 570 nm. Photoconductivity at room temperature is measured after illuminating the film with an FSH lamp (82 V, 300 W). Optical absorption studies in conjunction with the good photoconductivity of the prepared p-type CuInSe{sub 2} thin films indicate its suitability in photovoltaic applications.

  6. Thin film production method and apparatus

    DOEpatents

    Loutfy, Raouf O.; Moravsky, Alexander P.; Hassen, Charles N.

    2010-08-10

    A method for forming a thin film material which comprises depositing solid particles from a flowing suspension or aerosol onto a filter and next adhering the solid particles to a second substrate using an adhesive.

  7. Polycrystalline Thin-Film Multijunction Solar Cells

    SciTech Connect

    Noufi, R.; Wu, X.; Abu-Shama, J.; Ramanathan, K; Dhere, R.; Zhou, J.; Coutts, T.; Contreras, M.; Gessert, T.; Ward, J. S.

    2005-11-01

    We present a digest of our research on the thin-film material components that comprise the top and bottom cells of three different material systems and the tandem devices constructed from them.

  8. Thin-film Rechargeable Lithium Batteries

    DOE R&D Accomplishments

    Dudney, N. J.; Bates, J. B.; Lubben, D.

    1995-06-01

    Thin film rechargeable lithium batteries using ceramic electrolyte and cathode materials have been fabricated by physical deposition techniques. The lithium phosphorous oxynitride electrolyte has exceptional electrochemical stability and a good lithium conductivity. The lithium insertion reaction of several different intercalation materials, amorphous V{sub 2}O{sub 5}, amorphous LiMn{sub 2}O{sub 4}, and crystalline LiMn{sub 2}O{sub 4} films, have been investigated using the completed cathode/electrolyte/lithium thin film battery.

  9. Thin film absorber for a solar collector

    DOEpatents

    Wilhelm, William G.

    1985-01-01

    This invention pertains to energy absorbers for solar collectors, and more particularly to high performance thin film absorbers. The solar collectors comprising the absorber of this invention overcome several problems seen in current systems, such as excessive hardware, high cost and unreliability. In the preferred form, the apparatus features a substantially rigid planar frame with a thin film window bonded to one planar side of the frame. An absorber in accordance with the present invention is comprised of two thin film layers that are sealed perimetrically. In a preferred embodiment, thin film layers are formed from a metal/plastic laminate. The layers define a fluid-tight planar envelope of large surface area to volume through which a heat transfer fluid flows. The absorber is bonded to the other planar side of the frame. The thin film construction of the absorber assures substantially full envelope wetting and thus good efficiency. The window and absorber films stress the frame adding to the overall strength of the collector.

  10. Tungsten-doped thin film materials

    DOEpatents

    Xiang, Xiao-Dong; Chang, Hauyee; Gao, Chen; Takeuchi, Ichiro; Schultz, Peter G.

    2003-12-09

    A dielectric thin film material for high frequency use, including use as a capacitor, and having a low dielectric loss factor is provided, the film comprising a composition of tungsten-doped barium strontium titanate of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3, where X is between about 0.5 and about 1.0. Also provided is a method for making a dielectric thin film of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3 and doped with W, where X is between about 0.5 and about 1.0, a substrate is provided, TiO.sub.2, the W dopant, Ba, and optionally Sr are deposited on the substrate, and the substrate containing TiO.sub.2, the W dopant, Ba, and optionally Sr is heated to form a low loss dielectric thin film.

  11. Method for making thin polypropylene film

    DOEpatents

    Behymer, R.D.; Scholten, J.A.

    1985-11-21

    An economical method is provided for making uniform thickness polypropylene film as thin as 100 Angstroms. A solution of polypropylene dissolved in xylene is formed by mixing granular polypropylene and xylene together in a flask at an elevated temperature. A substrate, such as a glass plate or microscope slide is immersed in the solution. When the glass plate is withdrawn from the solution at a uniform rate, a thin polypropylene film forms on a flat surface area of the glass plate as the result of xylene evaporation. The actual thickness of the polypropylene film is functional of the polypropylene in xylene solution concentration, and the particular withdrawal rate of the glass plate from the solution. After formation, the thin polypropylene film is floated from the glass plate onto the surface of water, from which it is picked up with a wire hoop.

  12. Ambient pressure process for preparing aerogel thin films reliquified sols useful in preparing aerogel thin films

    DOEpatents

    Brinker, Charles Jeffrey; Prakash, Sai Sivasankaran

    1999-01-01

    A method for preparing aerogel thin films by an ambient-pressure, continuous process. The method of this invention obviates the use of an autoclave and is amenable to the formation of thin films by operations such as dip coating. The method is less energy intensive and less dangerous than conventional supercritical aerogel processing techniques.

  13. Laterally inherently thin amorphous-crystalline silicon heterojunction photovoltaic cell

    SciTech Connect

    Chowdhury, Zahidur R. Kherani, Nazir P.

    2014-12-29

    This article reports on an amorphous-crystalline silicon heterojunction photovoltaic cell concept wherein the heterojunction regions are laterally narrow and distributed amidst a backdrop of well-passivated crystalline silicon surface. The localized amorphous-crystalline silicon heterojunctions consisting of the laterally thin emitter and back-surface field regions are precisely aligned under the metal grid-lines and bus-bars while the remaining crystalline silicon surface is passivated using the recently proposed facile grown native oxide–plasma enhanced chemical vapour deposited silicon nitride passivation scheme. The proposed cell concept mitigates parasitic optical absorption losses by relegating amorphous silicon to beneath the shadowed metallized regions and by using optically transparent passivation layer. A photovoltaic conversion efficiency of 13.6% is obtained for an untextured proof-of-concept cell illuminated under AM 1.5 global spectrum; the specific cell performance parameters are V{sub OC} of 666 mV, J{sub SC} of 29.5 mA-cm{sup −2}, and fill-factor of 69.3%. Reduced parasitic absorption, predominantly in the shorter wavelength range, is confirmed with external quantum efficiency measurement.

  14. Photovoltaic concentrator with plastic-film reflector. Final report

    SciTech Connect

    Not Available

    1982-06-01

    A 4m diameter reflective film, parabolic dish concentrator proposed for use with a photovoltaic array has been designed, fabricated, and tested. The concentrator is made from aluminized film gores (wedge shaped pieces) that are taped together along their edges to form a dish. The shape of the dish is maintained by a pressure difference between the front and back. The deep dish was designed to illuminate a cylindrical receiver populated by solar cells with a geometric concentration ratio of 145. Three full scale dishes were made in sequence, each using improvements suggested by the previous design. They were tested with a laser to determine surface errors and flux uniformity on the target.

  15. Thin film cadmium telluride, zinc telluride, and mercury zinc telluride solar cells

    SciTech Connect

    Chu, T.L. )

    1992-04-01

    This report describes research to demonstrate (1) thin film cadmium telluride solar cells with a quantum efficiency of 75% or higher at 0. 44 {mu}m and a photovoltaic efficiency of 11.5% or greater, and (2) thin film zinc telluride and mercury zinc telluride solar cells with a transparency to sub-band-gap radiation of 65% and a photovoltaic conversion efficiency of 5% and 8%, respectively. Work was directed at (1) depositing transparent conducting semiconductor films by solution growth and metal-organic chemical vapor deposition (MOCVD) technique, (2) depositing CdTe films by close-spaced sublimation (CSS) and MOCVD techniques, (3) preparing and evaluating thin film CdTe solar cells, and (4) preparing and characterizing thin film ZnTe, CD{sub 1-x}Zn{sub 1-x}Te, and Hg{sub 1-x}Zn{sub x}Te solar cells. The deposition of CdS films from aqueous solutions was investigated in detail, and their crystallographic, optical, and electrical properties were characterized. CdTe films were deposited from DMCd and DIPTe at 400{degrees}C using TEGa and AsH{sub 3} as dopants. CdTe films deposited by CSS had significantly better microstructures than those deposited by MOCVD. Deep energy states in CdTe films deposited by CSS and MOCVD were investigated. Thin films of ZnTe, Cd{sub 1- x}Zn{sub x}Te, and Hg{sub 1-x}Zn{sub x}Te were deposited by MOCVD, and their crystallographic, optical, and electrical properties were characterized. 67 refs.

  16. Thin film dielectric composite materials

    DOEpatents

    Jia, Quanxi; Gibbons, Brady J.; Findikoglu, Alp T.; Park, Bae Ho

    2002-01-01

    A dielectric composite material comprising at least two crystal phases of different components with TiO.sub.2 as a first component and a material selected from the group consisting of Ba.sub.1-x Sr.sub.x TiO.sub.3 where x is from 0.3 to 0.7, Pb.sub.1-x Ca.sub.x TiO.sub.3 where x is from 0.4 to 0.7, Sr.sub.1-x Pb.sub.x TiO.sub.3 where x is from 0.2 to 0.4, Ba.sub.1-x Cd.sub.x TiO.sub.3 where x is from 0.02 to 0.1, BaTi.sub.1-x Zr.sub.x O.sub.3 where x is from 0.2 to 0.3, BaTi.sub.1-x Sn.sub.x O.sub.3 where x is from 0.15 to 0.3, BaTi.sub.1-x Hf.sub.x O.sub.3 where x is from 0.24 to 0.3, Pb.sub.1-1.3x La.sub.x TiO.sub.3+0.2x where x is from 0.23 to 0.3, (BaTiO.sub.3).sub.x (PbFeo.sub.0.5 Nb.sub.0.5 O.sub.3).sub.1-x where x is from 0.75 to 0.9, (PbTiO.sub.3).sub.- (PbCo.sub.0.5 W.sub.0.5 O.sub.3).sub.1-x where x is from 0.1 to 0.45, (PbTiO.sub.3).sub.x (PbMg.sub.0.5 W.sub.0.5 O.sub.3).sub.1-x where x is from 0.2 to 0.4, and (PbTiO.sub.3).sub.x (PbFe.sub.0.5 Ta.sub.0.5 O.sub.3).sub.1-x where x is from 0 to 0.2, as the second component is described. The dielectric composite material can be formed as a thin film upon suitable substrates.

  17. Method for synthesizing thin film electrodes

    DOEpatents

    Boyle, Timothy J.

    2007-03-13

    A method for making a thin-film electrode, either an anode or a cathode, by preparing a precursor solution using an alkoxide reactant, depositing multiple thin film layers with each layer approximately 500 1000 .ANG. in thickness, and heating the layers to above 600.degree. C. to achieve a material with electrochemical properties suitable for use in a thin film battery. The preparation of the anode precursor solution uses Sn(OCH.sub.2C(CH.sub.3).sub.3).sub.2 dissolved in a solvent in the presence of HO.sub.2CCH.sub.3 and the cathode precursor solution is formed by dissolving a mixture of (Li(OCH.sub.2C(CH.sub.3).sub.3)).sub.8 and Co(O.sub.2CCH.sub.3).H.sub.2O in at least one polar solvent.

  18. Thin Film Transistors On Plastic Substrates

    DOEpatents

    Carey, Paul G.; Smith, Patrick M.; Sigmon, Thomas W.; Aceves, Randy C.

    2004-01-20

    A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The silicon based thin film transistor produced by the process includes a low temperature substrate incapable of withstanding sustained processing temperatures greater than about 250.degree. C., an insulating layer on the substrate, a layer of silicon on the insulating layer having sections of doped silicon, undoped silicon, and poly-silicon, a gate dielectric layer on the layer of silicon, a layer of gate metal on the dielectric layer, a layer of oxide on sections of the layer of silicon and the layer of gate metal, and metal contacts on sections of the layer of silicon and layer of gate metal defining source, gate, and drain contacts, and interconnects.

  19. Mesoscale morphologies in polymer thin films.

    SciTech Connect

    Ramanathan, M.; Darling, S. B. (Center for Nanoscale Materials)

    2011-06-01

    In the midst of an exciting era of polymer nanoscience, where the development of materials and understanding of properties at the nanoscale remain a major R&D endeavor, there are several exciting phenomena that have been reported at the mesoscale (approximately an order of magnitude larger than the nanoscale). In this review article, we focus on mesoscale morphologies in polymer thin films from the viewpoint of origination of structure formation, structure development and the interaction forces that govern these morphologies. Mesoscale morphologies, including dendrites, holes, spherulites, fractals and honeycomb structures have been observed in thin films of homopolymer, copolymer, blends and composites. Following a largely phenomenological level of description, we review the kinetic and thermodynamic aspects of mesostructure formation outlining some of the key mechanisms at play. We also discuss various strategies to direct, limit, or inhibit the appearance of mesostructures in polymer thin films as well as an outlook toward potential areas of growth in this field of research.

  20. Vibration welding system with thin film sensor

    DOEpatents

    Cai, Wayne W; Abell, Jeffrey A; Li, Xiaochun; Choi, Hongseok; Zhao, Jingzhou

    2014-03-18

    A vibration welding system includes an anvil, a welding horn, a thin film sensor, and a process controller. The anvil and horn include working surfaces that contact a work piece during the welding process. The sensor measures a control value at the working surface. The measured control value is transmitted to the controller, which controls the system in part using the measured control value. The thin film sensor may include a plurality of thermopiles and thermocouples which collectively measure temperature and heat flux at the working surface. A method includes providing a welder device with a slot adjacent to a working surface of the welder device, inserting the thin film sensor into the slot, and using the sensor to measure a control value at the working surface. A process controller then controls the vibration welding system in part using the measured control value.

  1. NREL: Photovoltaics Research - Darius Kuciauskas, Ph.D.

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    NREL Publications View NREL publications for this staff member. Printable Version Photovoltaics Research Home Silicon Polycrystalline Thin Films Multijunctions New Materials,...

  2. NREL: Photovoltaics Research - Dirk Jordan, Ph.D.

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    NREL Publications View NREL publications for this staff member. Printable Version Photovoltaics Research Home Silicon Polycrystalline Thin Films Multijunctions New Materials,...

  3. Institute of Photo Electronic Thin Film Devices and Technology...

    OpenEI (Open Energy Information) [EERE & EIA]

    Place: Tianjin Municipality, China Zip: 300071 Sector: Solar Product: A thin-film solar cell research institute in China. References: Institute of Photo-Electronic Thin...

  4. Ultrafast transient reflectance of epitaxial semiconducting perovskite thin films

    SciTech Connect

    Smolin, S. Y.; Guglietta, G. W.; Baxter, J. B. E-mail: smay@coe.drexel.edu; Scafetta, M. D.; May, S. J. E-mail: smay@coe.drexel.edu

    2014-07-14

    Ultrafast pump-probe transient reflectance (TR) spectroscopy was used to study carrier dynamics in an epitaxial perovskite oxide thin film of LaFeO{sub 3} (LFO) with a thickness of 40 unit cells (16?nm) grown by molecular beam epitaxy on (LaAlO{sub 3}){sub 0.3}(Sr{sub 2}AlTaO{sub 6}){sub 0.7} (LSAT). TR spectroscopy shows two negative transients in reflectance with local maxima at ?2.5?eV and ?3.5?eV which correspond to two optical transitions in LFO as determined by ellipsometry. The kinetics at these transients were best fit with an exponential decay model with fast (540 ps), medium (?200 ps), and slow (??3?ns) components that we attribute mainly to recombination of photoexcited carriers. Moreover, these reflectance transients did not completely decay within the observable time window, indicating that ?10% of photoexcited carriers exist for at least 3?ns. This work illustrates that TR spectroscopy can be performed on thin (<20?nm) epitaxial oxide films to provide a quantitative understanding of recombination lifetimes, which are important parameters for the potential utilization of perovskite films in photovoltaic and photocatalytic applications.

  5. New GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    | Department of Energy GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology New GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology April 22, 2011 - 10:17am Addthis Photo courtesy of General Electric Photo courtesy of General Electric Minh Le Minh Le Deputy Director, Solar Energy Technologies Office Earlier this month, General Electric announced plans to enter the global marketplace for solar photovoltaic (PV) panels in a big way - and to do it, they will

  6. Solar Thin Films Inc formerly American United Global Inc | Open...

    OpenEI (Open Energy Information) [EERE & EIA]

    Films Inc formerly American United Global Inc Jump to: navigation, search Name: Solar Thin Films Inc (formerly American United Global Inc) Place: New York, New York Zip: 10038...

  7. Superconducting thin films on potassium tantalate substrates

    DOEpatents

    Feenstra, Roeland; Boatner, Lynn A.

    1992-01-01

    A superconductive system for the lossless transmission of electrical current comprising a thin film of superconducting material Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x epitaxially deposited upon a KTaO.sub.3 substrate. The KTaO.sub.3 is an improved substrate over those of the prior art since the it exhibits small lattice constant mismatch and does not chemically react with the superconducting film.

  8. Annealed CVD molybdenum thin film surface

    DOEpatents

    Carver, Gary E. (Tucson, AZ); Seraphin, Bernhard O. (Tucson, AZ)

    1984-01-01

    Molybdenum thin films deposited by pyrolytic decomposition of Mo(CO).sub.6 attain, after anneal in a reducing atmosphere at temperatures greater than 700.degree. C., infrared reflectance values greater than reflectance of supersmooth bulk molybdenum. Black molybdenum films deposited under oxidizing conditions and annealed, when covered with an anti-reflecting coating, approach the ideal solar collector characteristic of visible light absorber and infrared energy reflector.

  9. SAW determination of surface area of thin films

    DOEpatents

    Frye, Gregory C.; Martin, Stephen J.; Ricco, Antonio J.

    1990-01-01

    N.sub.2 adsorption isotherms are measured from thin films on SAW devices. The isotherms may be used to determine the surface area and pore size distribution of thin films.

  10. Guided Self-Assembly of Gold Thin Films

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Guided Self-Assembly of Gold Thin Films Guided Self-Assembly of Gold Thin Films Print Wednesday, 21 November 2012 12:18 Nanoparticles-man-made atoms with unique optical, ...

  11. MultiLayer solid electrolyte for lithium thin film batteries...

    Office of Scientific and Technical Information (OSTI)

    Patent: MultiLayer solid electrolyte for lithium thin film batteries Citation Details In-Document Search Title: MultiLayer solid electrolyte for lithium thin film batteries A ...

  12. Photovoltaic

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Energy Systems LaboratoryBrayton Lab Photovoltaic Systems Evaluation Laboratory PV ... Twitter Google + Vimeo Newsletter Signup SlideShare Photovoltaic HomePhotovoltaic ...

  13. Measurement of Transient Atomic-scale Displacements in Thin Films...

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    ... different thin film samples relevant to microelectronic and thermoelectric applications. ... for large thermal boundary resistance in nanostructured thermoelectric devices develop. ...

  14. Flexoelectricity in barium strontium titanate thin film

    SciTech Connect

    Kwon, Seol Ryung; Huang, Wenbin; Yuan, Fuh-Gwo; Jiang, Xiaoning; Shu, Longlong; Maria, Jon-Paul

    2014-10-06

    Flexoelectricity, the linear coupling between the strain gradient and the induced electric polarization, has been intensively studied as an alternative to piezoelectricity. Especially, it is of interest to develop flexoelectric devices on micro/nano scales due to the inherent scaling effect of flexoelectric effect. Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} thin film with a thickness of 130 nm was fabricated on a silicon wafer using a RF magnetron sputtering process. The flexoelectric coefficients of the prepared thin films were determined experimentally. It was revealed that the thin films possessed a transverse flexoelectric coefficient of 24.5 μC/m at Curie temperature (∼28 °C) and 17.44 μC/m at 41 °C. The measured flexoelectric coefficients are comparable to that of bulk BST ceramics, which are reported to be 10–100 μC/m. This result suggests that the flexoelectric thin film structures can be effectively used for micro/nano-sensing devices.

  15. UV absorption control of thin film growth

    DOEpatents

    Biefeld, Robert M.; Hebner, Gregory A.; Killeen, Kevin P.; Zuhoski, Steven P.

    1991-01-01

    A system for monitoring and controlling the rate of growth of thin films in an atmosphere of reactant gases measures the UV absorbance of the atmosphere and calculates the partial pressure of the gases. The flow of reactant gases is controlled in response to the partial pressure.

  16. Thin film hydrous metal oxide catalysts

    DOEpatents

    Dosch, Robert G. (Albuquerque, NM); Stephens, Howard P. (Albuquerque, NM)

    1995-01-01

    Thin film (<100 nm) hydrous metal oxide catalysts are prepared by 1) synthesis of a hydrous metal oxide, 2) deposition of the hydrous metal oxide upon an inert support surface, 3) ion exchange with catalytically active metals, and 4) activating the hydrous metal oxide catalysts.

  17. Rechargeable Thin-film Lithium Batteries

    DOE R&D Accomplishments

    Bates, J. B.; Gruzalski, G. R.; Dudney, N. J.; Luck, C. F.; Yu, Xiaohua

    1993-08-01

    Rechargeable thin film batteries consisting of lithium metal anodes, an amorphous inorganic electrolyte, and cathodes of lithium intercalation compounds have recently been developed. The batteries, which are typically less than 6 {mu}m thick, can be fabricated to any specified size, large or small, onto a variety of substrates including ceramics, semiconductors, and plastics. The cells that have been investigated include Li TiS{sub 2}, Li V{sub 2}O{sub 5}, and Li Li{sub x}Mn{sub 2}O{sub 4}, with open circuit voltages at full charge of about 2.5, 3.6, and 4.2, respectively. The development of these batteries would not have been possible without the discovery of a new thin film lithium electrolyte, lithium phosphorus oxynitride, that is stable in contact with metallic lithium at these potentials. Deposited by rf magnetron sputtering of Li{sub 3}PO{sub 4} in N{sub 2}, this material has a typical composition of Li{sub 2.9}PO{sub 3.3}N{sub 0.46} and a conductivity at 25{degrees}C of 2 {mu}S/cm. The maximum practical current density obtained from the thin film cells is limited to about 100 {mu}A/cm{sup 2} due to a low diffusivity of Li{sup +} ions in the cathodes. In this work, the authors present a short review of their work on rechargeable thin film lithium batteries.

  18. Negative resistance in an organic thin film

    SciTech Connect

    Ehara, S. ); Takagi, T. ); Yoshida, T.; Inaba, H.; Naito, H.; Okuda, M. )

    1992-08-20

    This paper reports that the negative resistance of the tunneling currents was observed in a semiconducting organic thin film on a graphite substrate by an STM (Scanning Tunneling Microscopy). This negative resistance may be understood by the theory of a molecular resonance tunneling effect.

  19. Copper Antimony Chalcogenide Thin Film PV Device Development

    SciTech Connect

    Welch, Adam W.; Baranowski, Lauryn L.; de Souza Lucas, Francisco Willian; Toberer, Eric S.; Wolden, Colin A.; Zakutayev, Andriy

    2015-06-14

    Emerging ternary chalcogenide thin film solar cell technologies, such as CuSbS2 and CuSbSe2, have recently attracted attention as simpler alternatives to quaternary Cu2ZnSnS4 (CZTS). Despite suitable photovoltaic properties, the initial energy conversion efficiency of CuSbS2 is rather low (0.3%). Here, we report on our progress towards improving the efficiency of CuSbS2 solar cells using a high throughput approach. The combinatorial methodology quickly results in baseline solar cell prototypes with 0.6% efficiency, and then modification of the back contact architecture leads to 1% PV devices. We then translate the optimal CuSbS2 synthesis parameters to CuSbSe2 devices, which show 3% efficiencies.

  20. Thin film solar energy collector

    SciTech Connect

    Farrauto, R.J.; Myers, H.; Williams, J.C.

    1982-03-23

    A solar energy collector has improved absorptance and emissivity levels comprising: (1) a silver-copper oxide-rhodium oxide solar absorption film, (2) a cerium oxide interlayer and a substrate of quartz, silica glass or metal. The cerium oxide interlayer minimizes agglomeration of the metal particles, maintains a relatively low thermal emittance and improves overall stability.

  1. Preparation of thin film high temperature superconductors

    SciTech Connect

    VenKatesan, X.X.T.; Li, Q.; Findikoglu, A.; Hemmick, D. . Dept. of Physics); Wu, X.D. ); Inam, A.; Chang, C.C.; Ramesh, R.; Hwang, D.M.; Ravi, T.S.; Etemad, S.; Martinez, J.A.; Wilkens, B. )

    1991-03-01

    This paper addresses fundamental issues in preparing high quality high T{sub c} YBa{sub 2}Cu{sub 3}O{sub 7{minus}x} thin films. The techniques of inverted cylindrical magnetron sputtering and pulsed laser deposition are chosen as successful examples to illustrate how the key problems can be solved. The fabrication of YBa{sub 2}Cu{sub 3}O{sub 7{minus}x}/PrBa{sub 2}Cu{sub 3}O{sub 7{minus}x} superlattices where superconductivity in a single unit cell layer of YBa{sub 2}Cu{sub 3}O{sub 7{minus}x} was observed demonstrates the state of the art of thin film deposition of high T{sub c} materials. Systematic variations of the deposition parameters result in changes of superconducting and structural properties of the films that correlate with their microwave and infrared characteristics.

  2. Photovoltaic Research | NREL

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Solar panels line the rooftop of the parking garage at the south table mountain campus of NREL. National Center for Photovoltaics Inaugural History-from NCPV's inception in 1996 PV Manufacturing R&D Project Thin-Film PV Partnership Research Cell Record Efficiency Chart and Explanatory Notes NCPV Video The National Center for Photovoltaics (NCPV) works to advance the state of the art across the full spectrum of photovoltaic (PV) research and development at the National Renewable Energy

  3. Silicon Oxynitride Thin Film Barriers for PV Packaging (Poster)

    SciTech Connect

    del Cueto, J. A.; Glick, S. H.; Terwilliger, K. M.; Jorgensen, G. J.; Pankow, J. W.; Keyes, B. M.; Gedvilas, L. M.; Pern, F. J.

    2006-10-03

    Dielectric, adhesion-promoting, moisture barriers comprised of silicon oxynitride thin film materials (SiOxNy with various material stoichiometric compositions x,y) were applied to: 1) bare and pre-coated soda-lime silicate glass (coated with transparent conductive oxide SnO2:F and/or aluminum), and polymer substrates (polyethylene terephthalate, PET, or polyethylene napthalate, PEN); plus 2) pre- deposited photovoltaic (PV) cells and mini-modules consisting of amorphous silicon (a-Si) and copper indium gallium diselenide (CIGS) thin-film PV technologies. We used plasma enhanced chemical vapor deposition (PECVD) process with dilute silane, nitrogen, and nitrous oxide/oxygen gas mixtures in a low-power (< or = 10 milliW per cm2) RF discharge at ~ 0.2 Torr pressure, and low substrate temperatures < or = 100(degrees)C, over deposition areas ~ 1000 cm2. Barrier properties of the resulting PV cells and coated-glass packaging structures were studied with subsequent stressing in damp-heat exposure at 85(degrees)C/85% RH. Preliminary results on PV cells and coated glass indicate the palpable benefits of the barriers in mitigating moisture intrusion and degradation of the underlying structures using SiOxNy coatings with thicknesses in the range of 100-200 nm.

  4. Thin film bismuth iron oxides useful for piezoelectric devices

    DOEpatents

    Zeches, Robert J.; Martin, Lane W.; Ramesh, Ramamoorthy

    2016-05-31

    The present invention provides for a composition comprising a thin film of BiFeO.sub.3 having a thickness ranging from 20 nm to 300 nm, a first electrode in contact with the BiFeO.sub.3 thin film, and a second electrode in contact with the BiFeO.sub.3 thin film; wherein the first and second electrodes are in electrical communication. The composition is free or essentially free of lead (Pb). The BFO thin film is has the piezoelectric property of changing its volume and/or shape when an electric field is applied to the BFO thin film.

  5. Electrohydrodynamic instabilities in thin liquid trilayer films

    DOE PAGES [OSTI]

    Roberts, Scott A.; Kumar, Satish

    2010-12-09

    Experiments by Dickey and Leach show that novel pillar shapes can be generated from electrohydrodynamic instabilities at the interfaces of thin polymer/polymer/air trilayer films. In this paper, we use linear stability analysis to investigate the effect of free charge and ac electric fields on the stability of trilayer systems. Our work is also motivated by our recent theoretical study which demonstrates how ac electric fields can be used to increase control over the pillar formation process in thin liquid bilayer films. For perfect dielectric films, the effect of an AC electric field can be understood by considering an equivalent DCmore » field. Leaky dielectric films yield pillar configurations that are drastically different from perfect dielectric films, and AC fields can be used to control the location of free charge within the trilayer system. This can alter the pillar instability modes and generate smaller diameter pillars when conductivities are mismatched. The results presented may be of interest for the creation of complex topographical patterns on polymer coatings and in microelectronics.« less

  6. Electrohydrodynamic instabilities in thin liquid trilayer films

    SciTech Connect

    Roberts, Scott A.; Kumar, Satish

    2010-01-01

    Experiments by Dickey and Leach show that novel pillar shapes can be generated from electrohydrodynamic instabilities at the interfaces of thin polymer/polymer/air trilayer films. In this paper, we use linear stability analysis to investigate the effect of free charge and ac electric fields on the stability of trilayer systems. Our work is also motivated by our recent theoretical study which demonstrates how ac electric fields can be used to increase control over the pillar formation process in thin liquid bilayer films. For perfect dielectric films, the effect of an AC electric field can be understood by considering an equivalent DC field. Leaky dielectric films yield pillar configurations that are drastically different from perfect dielectric films, and AC fields can be used to control the location of free charge within the trilayer system. This can alter the pillar instability modes and generate smaller diameter pillars when conductivities are mismatched. The results presented here may be of interest for the creation of complex topographical patterns on polymer coatings and in microelectronics.

  7. Nitrogen doped zinc oxide thin film

    SciTech Connect

    Li, Sonny X.

    2003-12-15

    To summarize, polycrystalline ZnO thin films were grown by reactive sputtering. Nitrogen was introduced into the films by reactive sputtering in an NO{sub 2} plasma or by N{sup +} implantation. All ZnO films grown show n-type conductivity. In unintentionally doped ZnO films, the n-type conductivities are attributed to Zn{sub i}, a native shallow donor. In NO{sub 2}-grown ZnO films, the n-type conductivity is attributed to (N{sub 2}){sub O}, a shallow double donor. In NO{sub 2}-grown ZnO films, 0.3 atomic % nitrogen was found to exist in the form of N{sub 2}O and N{sub 2}. Upon annealing, N{sub 2}O decomposes into N{sub 2} and O{sub 2}. In furnace-annealed samples N{sub 2} redistributes diffusively and forms gaseous N{sub 2} bubbles in the films. Unintentionally doped ZnO films were grown at different oxygen partial pressures. Zni was found to form even at oxygen-rich condition and led to n-type conductivity. N{sup +} implantation into unintentionally doped ZnO film deteriorates the crystallinity and optical properties and leads to higher electron concentration. The free electrons in the implanted films are attributed to the defects introduced by implantation and formation of (N{sub 2}){sub O} and Zni. Although today there is still no reliable means to produce good quality, stable p-type ZnO material, ZnO remains an attractive material with potential for high performance short wavelength optoelectronic devices. One may argue that gallium nitride was in a similar situation a decade ago. Although we did not obtain any p-type conductivity, we hope our research will provide a valuable reference to the literature.

  8. Substrate heater for thin film deposition

    DOEpatents

    Foltyn, Steve R. (111 Beryl St., Los Alamos, NM 87544)

    1996-01-01

    A substrate heater for thin film deposition of metallic oxides upon a target substrate configured as a disk including means for supporting in a predetermined location a target substrate configured as a disk, means for rotating the target substrate within the support means, means for heating the target substrate within the support means, the heating means about the support means and including a pair of heating elements with one heater element situated on each side of the predetermined location for the target substrate, with one heater element defining an opening through which desired coating material can enter for thin film deposition and with the heating means including an opening slot through which the target substrate can be entered into the support means, and, optionally a means for thermal shielding of the heating means from surrounding environment is disclosed.

  9. Structures for dense, crack free thin films

    DOEpatents

    Jacobson, Craig P.; Visco, Steven J.; De Jonghe, Lutgard C.

    2011-03-08

    The process described herein provides a simple and cost effective method for making crack free, high density thin ceramic film. The steps involve depositing a layer of a ceramic material on a porous or dense substrate. The deposited layer is compacted and then the resultant laminate is sintered to achieve a higher density than would have been possible without the pre-firing compaction step.

  10. Packaging material for thin film lithium batteries

    DOEpatents

    Bates, John B.; Dudney, Nancy J.; Weatherspoon, Kim A.

    1996-01-01

    A thin film battery including components which are capable of reacting upon exposure to air and water vapor incorporates a packaging system which provides a barrier against the penetration of air and water vapor. The packaging system includes a protective sheath overlying and coating the battery components and can be comprised of an overlayer including metal, ceramic, a ceramic-metal combination, a parylene-metal combination, a parylene-ceramic combination or a parylene-metal-ceramic combination.

  11. Photovoltaic cells employing zinc phosphide

    DOEpatents

    Barnett, Allen M.; Catalano, Anthony W.; Dalal, Vikram L.; Masi, James V.; Meakin, John D.; Hall, Robert B.

    1984-01-01

    A photovoltaic cell having a zinc phosphide absorber. The zinc phosphide can be a single or multiple crystal slice or a thin polycrystalline film. The cell can be a Schottky barrier, heterojunction or homojunction device. Methods for synthesizing and crystallizing zinc phosphide are disclosed as well as a method for forming thin films.

  12. Active superconducting devices formed of thin films

    DOEpatents

    Martens, Jon S.; Beyer, James B.; Nordman, James E.; Hohenwarter, Gert K. G.

    1991-05-28

    Active superconducting devices are formed of thin films of superconductor which include a main conduction channel which has an active weak link region. The weak link region is composed of an array of links of thin film superconductor spaced from one another by voids and selected in size and thickness such that magnetic flux can propagate across the weak link region when it is superconducting. Magnetic flux applied to the weak link region will propagate across the array of links causing localized loss of superconductivity in the links and changing the effective resistance across the links. The magnetic flux can be applied from a control line formed of a superconducting film deposited coplanar with the main conduction channel and weak link region on a substrate. The devices can be formed of any type to superconductor but are particularly well suited to the high temperature superconductors since the devices can be entirely formed from coplanar films with no overlying regions. The devices can be utilized for a variety of electrical components, including switching circuits, amplifiers, oscillators and modulators, and are well suited to microwave frequency applications.

  13. Epitaxial Cu{sub 2}ZnSnS{sub 4} thin film on Si (111) 4° substrate

    SciTech Connect

    Song, Ning; Liu, Fangyang; Huang, Yidan; Hao, Xiaojing E-mail: xj.hao@unsw.edu.au; Green, Martin A.; Young, Matthew; Erslev, Pete; Harvey, Steven P.; Teeter, Glenn E-mail: xj.hao@unsw.edu.au; Wilson, Samual

    2015-06-22

    To explore the possibility of Cu{sub 2}ZnSnS{sub 4} (CZTS)/Si based tandem solar cells, the heteroepitaxy of tetragonal Cu{sub 2}ZnSnS{sub 4} thin films on single crystalline cubic Si (111) wafers with 4° miscut is obtained by molecular beam epitaxy. The X-ray θ-2θ scan and selected area diffraction patterns of the CZTS thin films and Si substrates, and the high resolution transmission electron microscopy image of the CZTS/Si interface region demonstrate that the CZTS thin films are epitaxially grown on the Si substrates. A CZTS/Si P-N junction is formed and shows photovoltaic responses, indicating the promising application of epitaxial CZTS thin films on Si.

  14. Investigation of deep level defects in CdTe thin films

    SciTech Connect

    Shankar, H.; Castaldini, A.; Dauksta, E.; Medvid, A.; Cavallini, A.

    2014-02-21

    In the past few years, a large body of work has been dedicated to CdTe thin film semiconductors, as the electronic and optical properties of CdTe nanostructures make them desirable for photovoltaic applications. The performance of semiconductor devices is greatly influenced by the deep levels. Knowledge of parameters of deep levels present in as-grown materials and the identification of their origin is the key factor in the development of photovoltaic device performance. Photo Induced Current Transient Spectroscopy technique (PICTS) has proven to be a very powerful method for the study of deep levels enabling us to identify the type of traps, their activation energy and apparent capture cross section. In the present work, we report the effect of growth parameters and LASER irradiation intensity on the photo-electric and transport properties of CdTe thin films prepared by Close-Space Sublimation method using SiC electrical heating element. CdTe thin films were grown at three different source temperatures (630, 650 and 700 C). The grown films were irradiated with Nd:YAG LASER and characterized by Photo-Induced Current Transient Spectroscopy, Photocurrent measurementand Current Voltage measurements. The defect levels are found to be significantly influenced by the growth temperature.

  15. Orientational Analysis of Molecules in Thin Films | Stanford Synchrotron

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Radiation Lightsource Orientational Analysis of Molecules in Thin Films Monday, September 17, 2012 - 10:00am SSRL Bldg. 137, room 226 Daniel Kaefer The synchrotron-based X-ray absorption spectroscopy is a very powerful tool to unravel the orientation of organic molecules on surfaces or in thin films. This information on the alignment of - most often - highly anisotropic molecules can become crucial if an epitaxial or even crystalline organic growth is desired, if such thin film should serve

  16. PROJECT PROFILE: Correlative Electronic Spectroscopies for Increasing Photovoltaic Efficiency

    Office of Energy Efficiency and Renewable Energy (EERE)

    Recombination limits open-circuit voltages in thin film photovoltaic (PV) devices to 60-65% of the thermodynamic limit. The project will develop fast, non-contact optical metrology methods to detect optically active defects in thin-film photovoltaic (PV) materials and map recombination velocities at shallow interfaces. These techniques will speed up the diagnostics and optimization of thin-film PV absorber materials and interfaces.

  17. Copper Indium Gallium Diselenide Solar Cells | Photovoltaic Research | NREL

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Solar Cells The National Center for Photovoltaics (NCPV) at NREL has significant capabilities in copper indium gallium diselenide (CIGS) thin-film photovoltaic research and device development. CIGS-based thin-film solar cell modules represent the highest-efficiency alternative for large-scale, commercial thin-film solar cells. Record small-area single-junction efficiency now tops 22% and several companies have confirmed module efficiencies exceeding 16%. PV Research Other Materials & Devices

  18. Guided Self-Assembly of Gold Thin Films

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Guided Self-Assembly of Gold Thin Films Print Nanoparticles-man-made atoms with unique ... films from highly ordered one--, two- and three-dimensional arrays of gold nanoparticles. ...

  19. Fluorination of amorphous thin-film materials with xenon fluoride

    DOEpatents

    Weil, R.B.

    1987-05-01

    A method is disclosed for producing fluorine-containing amorphous semiconductor material, preferably comprising amorphous silicon. The method includes depositing amorphous thin-film material onto a substrate while introducing xenon fluoride during the film deposition process.

  20. Fluorination of amorphous thin-film materials with xenon fluoride

    DOEpatents

    Weil, Raoul B. (Haifa, IL)

    1988-01-01

    A method is disclosed for producing fluorine-containing amorphous semiconductor material, preferably comprising amorphous silicon. The method includes depositing amorphous thin-film material onto a substrate while introducing xenon fluoride during the film deposition process.

  1. New modalities of strain-control of ferroelectric thin films...

    Office of Scientific and Technical Information (OSTI)

    Publisher's Accepted Manuscript: New modalities of strain-control of ferroelectric thin films This content will become publicly available on May 17, 2017 Prev Next Title: New ...

  2. Conductive Polymer/Fullerene Blend Thin Films with Honeycomb...

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Advanced Materials Advanced Materials Find More Like This Return to Search Conductive PolymerFullerene Blend Thin Films with Honeycomb Framework Brookhaven National Laboratory...

  3. Thin-Film Lithium-Based Electrochromic Devices - Energy Innovation...

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Find More Like This Return to Search Thin-Film Lithium-Based Electrochromic Devices ... For lithium-based electrochromic cells, the electrolyte contains mobile lithium which ...

  4. Guided Self-Assembly of Gold Thin Films

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Berkeley Lab and UC Berkeley scientists have made progress toward this goal, successfully directing the self--assembly of nanoparticles into device-ready thin films, which have...

  5. Thin-film lithiation structural transformations imaged in situ...

    Office of Scientific and Technical Information (OSTI)

    by liquid cell transmission electron microscopy. Citation Details In-Document Search Title: Thin-film lithiation structural transformations imaged in situ by liquid cell ...

  6. Epitaxial ternary nitride thin films prepared by a chemical solution...

    Office of Scientific and Technical Information (OSTI)

    Journal Article: Epitaxial ternary nitride thin films prepared by a chemical solution method Citation Details ... This is the first report of epitaxial growth of ternary ...

  7. Radiation tolerance of ultra-thin Formvar films (Journal Article...

    Office of Scientific and Technical Information (OSTI)

    Journal Article: Radiation tolerance of ultra-thin Formvar films Citation Details ... OSTI Identifier: 22089363 Resource Type: Journal Article Resource Relation: Journal Name: ...

  8. Optimization of Processing and Modeling Issues for Thin Film...

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Newark, Delaware Optimization of Processing and Modeling Issues for Thin Film Solar Cell Devices Including Concepts for the Development of Polycrystalline Multijunctions ...

  9. Fast lithium-ion conducting thin film electrolytes integrated...

    Office of Scientific and Technical Information (OSTI)

    Fast lithium-ion conducting thin film electrolytes integrated directly on flexible substrates for high power solid-state batteries. Citation Details In-Document Search Title: Fast ...

  10. Rechargeable thin film battery and method for making the same

    DOEpatents

    Goldner, Ronald B.; Liu, Te-Yang; Goldner, Mark A.; Gerouki, Alexandra; Haas, Terry E.

    2006-01-03

    A rechargeable, stackable, thin film, solid-state lithium electrochemical cell, thin film lithium battery and method for making the same is disclosed. The cell and battery provide for a variety configurations, voltage and current capacities. An innovative low temperature ion beam assisted deposition method for fabricating thin film, solid-state anodes, cathodes and electrolytes is disclosed wherein a source of energetic ions and evaporants combine to form thin film cell components having preferred crystallinity, structure and orientation. The disclosed batteries are particularly useful as power sources for portable electronic devices and electric vehicle applications where high energy density, high reversible charge capacity, high discharge current and long battery lifetimes are required.

  11. Uncooled thin film pyroelectric IR detector with aerogel thermal isolation

    DOEpatents

    Ruffner, Judith A.; Bullington, Jeff A.; Clem, Paul G.; Warren, William L.; Brinker, C. Jeffrey; Tuttle, Bruce A.; Schwartz, Robert W.

    1999-01-01

    A monolithic infrared detector structure which allows integration of pyroelectric thin films atop low thermal conductivity aerogel thin films. The structure comprises, from bottom to top, a substrate, an aerogel insulating layer, a lower electrode, a pyroelectric layer, and an upper electrode layer capped by a blacking layer. The aerogel can offer thermal conductivity less than that of air, while providing a much stronger monolithic alternative to cantilevered or suspended air-gap structures for pyroelectric thin film pixel arrays. Pb(Zr.sub.0.4 Ti.sub.0.6)O.sub.3 thin films deposited on these structures displayed viable pyroelectric properties, while processed at 550.degree. C.

  12. Structural characterization of impurified zinc oxide thin films

    SciTech Connect

    Trinca, L. M.; Galca, A. C. Stancu, V. Chirila, C. Pintilie, L.

    2014-11-05

    Europium doped zinc oxide (Eu:ZnO) thin films have been obtained by pulsed laser deposition (PLD). 002 textured thin films were achieved on glass and silicon substrates, while hetero-epilayers and homo-epilayers have been attained on single crystal SrTiO{sub 3} and ZnO, respectively. X-ray Diffraction (XRD) was employed to characterize the Eu:ZnO thin films. Extended XRD studies confirmed the different thin film structural properties as function of chosen substrates.

  13. Tax Credits Give Thin-Film Solar a Big Boost

    Energy.gov [DOE]

    California company will expand its capacity to make its thin-film solar panels by more than ten times, thanks to two Recovery Act tax credits.

  14. Flexible Thin Film Solid State Lithium Ion Batteries - Energy...

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Flexible Thin Film Solid State Lithium Ion Batteries National Renewable Energy Laboratory Contact NREL About This Technology Technology Marketing Summary Batteries are ...

  15. Rechargeable thin-film electrochemical generator

    DOEpatents

    Rouillard, Roger; Domroese, Michael K.; Hoffman, Joseph A.; Lindeman, David D.; Noel, Joseph-Robert-Gaetan; Radewald, Vern E.; Ranger, Michel; Sudano, Anthony; Trice, Jennifer L.; Turgeon, Thomas A.

    2000-09-15

    An improved electrochemical generator is disclosed. The electrochemical generator includes a thin-film electrochemical cell which is maintained in a state of compression through use of an internal or an external pressure apparatus. A thermal conductor, which is connected to at least one of the positive or negative contacts of the cell, conducts current into and out of the cell and also conducts thermal energy between the cell and thermally conductive, electrically resistive material disposed on a vessel wall adjacent the conductor. The thermally conductive, electrically resistive material may include an anodized coating or a thin sheet of a plastic, mineral-based material or conductive polymer material. The thermal conductor is fabricated to include a resilient portion which expands and contracts to maintain mechanical contact between the cell and the thermally conductive material in the presence of relative movement between the cell and the wall structure. The electrochemical generator may be disposed in a hermetically sealed housing.

  16. TEM characterization of nanodiamond thin films.

    SciTech Connect

    Qin, L.-C.; Zhou, D.; Krauss, A. R.; Gruen, D. M.; Chemistry

    1998-05-01

    The microstructure of thin films grown by microwave plasma-enhanced chemical vapor deposition (MPCVD) from fullerene C{sub 60} precursors has been characterized by scanning electron microscopy (SEM), selected-area electron diffraction (SAED), bright-field electron microscopy, high-resolution electron microscopy (HREM), and parallel electron energy loss spectroscopy (PEELS). The films are composed of nanosize crystallites of diamond, and no graphitic or amorphous phases were observed. The diamond crystallite size measured from lattice images shows that most grains range between 3-5 nm, reflecting a gamma distribution. SAED gave no evidence of either sp2-bonded glassy carbon or sp3-bonded diamondlike amorphous carbon. The sp2-bonded configuration found in PEELS was attributed to grain boundary carbon atoms, which constitute 5-10% of the total. Occasionally observed larger diamond grains tend to be highly faulted.

  17. Process for making dense thin films

    DOEpatents

    Jacobson, Craig P.; Visco, Steven J.; DeJonghe, Lutgard C.

    2005-07-26

    Provided are low-cost, mechanically strong, highly electronically conductive porous substrates and associated structures for solid-state electrochemical devices, techniques for forming these structures, and devices incorporating the structures. The invention provides solid state electrochemical device substrates of novel composition and techniques for forming thin electrode/membrane/electrolyte coatings on the novel or more conventional substrates. In particular, in one embodiment the invention provides techniques for firing of device substrate to form densified electrolyte/membrane films 5 to 20 microns thick. In another embodiment, densified electrolyte/membrane films 5 to 20 microns thick may be formed on a pre-sintered substrate by a constrained sintering process. In some cases, the substrate may be a porous metal, alloy, or non-nickel cermet incorporating one or more of the transition metals Cr, Fe, Cu and Ag, or alloys thereof.

  18. Optically activated sub-millimeter dielectric relaxation in amorphous thin film silicon at room temperature

    SciTech Connect

    Rahman, Rezwanur; Ohno, Tim R.; Taylor, P. C.; Scales, John A.

    2014-05-05

    Knowing the frequency-dependent photo-induced complex conductivity of thin films is useful in the design of photovoltaics and other semi-conductor devices. For example, annealing in the far-infrared could in principle be tailored to the specific dielectric properties of a particular sample. The frequency dependence of the conductivity (whether dark or photo-induced) also gives insight into the effective dimensionality of thin films (via the phonon density of states) as well as the presence (or absence) of free carriers, dopants, defects, etc. Ultimately, our goal is to make low-noise, phase-sensitive room temperature measurements of the frequency-dependent conductivity of thin films from microwave frequencies into the far-infrared; covering, the frequency range from ionic and dipole relaxation to atomic and electronic processes. To this end, we have developed a high-Q (quality factor) open cavity resonator capable of resolving the complex conductivity of sub-micron films in the range of 100350?GHz (0.10.35 THz, or 0.41?meV). In this paper, we use a low-power green laser to excite bound charges in high-resistivity amorphous silicon thin film. Even at room temperature, we can resolve both the dark conductivity and photo-induced changes associated with dielectric relaxation and possibly some small portion of free carriers.

  19. Resource recovery from urban stock, the example of cadmium and tellurium from thin film module recycling

    SciTech Connect

    Simon, F.-G.; Holm, O.; Berger, W.

    2013-04-15

    Highlights: ► The semiconductor layer on thin-film photovoltaic modules can be removed from the glass-plate by vacuum blast cleaning. ► The separation of blasting agent and semiconductor can be performed using flotation with a valuable yield of 55%. ► PV modules are a promising source for the recovery of tellurium in the future. - Abstract: Raw material supply is essential for all industrial activities. The use of secondary raw material gains more importance since ore grade in primary production is decreasing. Meanwhile urban stock contains considerable amounts of various elements. Photovoltaic (PV) generating systems are part of the urban stock and recycling technologies for PV thin film modules with CdTe as semiconductor are needed because cadmium could cause hazardous environmental impact and tellurium is a scarce element where future supply might be constrained. The paper describes a sequence of mechanical processing techniques for end-of-life PV thin film modules consisting of sandblasting and flotation. Separation of the semiconductor material from the glass surface was possible, however, enrichment and yield of valuables in the flotation step were non-satisfying. Nevertheless, recovery of valuable metals from urban stock is a viable method for the extension of the availability of limited natural resources.

  20. Gas expanded polymer process to anneal nanoparticle dispersion in thin films

    DOE PAGES [OSTI]

    Ambuken, Preejith V.; Stretz, Holly A.; Dadmun, Mark; Michael Kilbey, S.

    2015-04-21

    A spin-coating solution comprising poly(3-hexylthiophene) (P3HT) and phenyl-C61-butyric acid methyl ester (PCBM) nanoparticles used to create organic photovoltaic (OPV) active layers have been shown to adopt a non-uniform concentration profile across the thin film dimension. This inhomogeneous distribution can reduce the efficiency of the device. For our new process, gas expanded polymer (GXP) annealing, is applied to P3HT/PCBM thin film blends, enabling the distribution of the PCBM nanoparticles to be manipulated by varying the GXP processing conditions. Films of 50 nm thickness (nominally) created by spin casting a blend of P3HT mixed with PCBM were annealed by oscillatory GXP andmore » GXP at constant pressure using high pressure CO2. An increase in P3HT crystallinity (detected by X-ray diffraction and UV-vis spectroscopy) along with a more uniform distribution of PCBM nanoparticles in the thickness dimension, as interpreted from neutron reflectivity measurements, were observed after oscillatory GXP annealing. In addition, static water contact angles suggest that the film/air interface is enriched in PCBM relative to the as-cast film. Finally, these results demonstrate that GXP annealing, which is commercially scalable, can be successfully used to create a uniform distribution of PCBM nanoparticles across the thickness dimension in a P3HT thin film.« less

  1. Gas expanded polymer process to anneal nanoparticle dispersion in thin films

    SciTech Connect

    Ambuken, Preejith V.; Stretz, Holly A.; Dadmun, Mark; Michael Kilbey, S.

    2015-04-21

    A spin-coating solution comprising poly(3-hexylthiophene) (P3HT) and phenyl-C61-butyric acid methyl ester (PCBM) nanoparticles used to create organic photovoltaic (OPV) active layers have been shown to adopt a non-uniform concentration profile across the thin film dimension. This inhomogeneous distribution can reduce the efficiency of the device. For our new process, gas expanded polymer (GXP) annealing, is applied to P3HT/PCBM thin film blends, enabling the distribution of the PCBM nanoparticles to be manipulated by varying the GXP processing conditions. Films of 50 nm thickness (nominally) created by spin casting a blend of P3HT mixed with PCBM were annealed by oscillatory GXP and GXP at constant pressure using high pressure CO2. An increase in P3HT crystallinity (detected by X-ray diffraction and UV-vis spectroscopy) along with a more uniform distribution of PCBM nanoparticles in the thickness dimension, as interpreted from neutron reflectivity measurements, were observed after oscillatory GXP annealing. In addition, static water contact angles suggest that the film/air interface is enriched in PCBM relative to the as-cast film. Finally, these results demonstrate that GXP annealing, which is commercially scalable, can be successfully used to create a uniform distribution of PCBM nanoparticles across the thickness dimension in a P3HT thin film.

  2. Processing approach towards the formation of thin-film Cu(In,Ga)Se2

    DOEpatents

    Beck, Markus E.; Noufi, Rommel

    2003-01-01

    A two-stage method of producing thin-films of group IB-IIIA-VIA on a substrate for semiconductor device applications includes a first stage of depositing an amorphous group IB-IIIA-VIA precursor onto an unheated substrate, wherein the precursor contains all of the group IB and group IIIA constituents of the semiconductor thin-film to be produced in the stoichiometric amounts desired for the final product, and a second stage which involves subjecting the precursor to a short thermal treatment at 420.degree. C.-550.degree. C. in a vacuum or under an inert atmosphere to produce a single-phase, group IB-III-VIA film. Preferably the precursor also comprises the group VIA element in the stoichiometric amount desired for the final semiconductor thin-film. The group IB-IIIA-VIA semiconductor films may be, for example, Cu(In,Ga)(Se,S).sub.2 mixed-metal chalcogenides. The resultant supported group IB-IIIA-VIA semiconductor film is suitable for use in photovoltaic applications.

  3. Apparatus for laser assisted thin film deposition

    DOEpatents

    Warner, Bruce E.; McLean, II, William

    1996-01-01

    A pulsed laser deposition apparatus uses fiber optics to deliver visible output beams. One or more optical fibers are coupled to one or more laser sources, and delivers visible output beams to a single chamber, to multiple targets in the chamber or to multiple chambers. The laser can run uninterrupted if one of the deposition chambers ceases to operate because other chambers can continue their laser deposition processes. The laser source can be positioned at a remote location relative to the deposition chamber. The use of fiber optics permits multi-plexing. A pulsed visible laser beam is directed at a generally non-perpendicular angle upon the target in the chamber, generating a plume of ions and energetic neutral species. A portion of the plume is deposited on a substrate as a thin film. A pulsed visible output beam with a high pulse repetition frequency is used. The high pulse repetition frequency is greater than 500 Hz, and more preferably, greater than about 1000 Hz. Diamond-like-carbon (DLC) is one of the thin films produced using the apparatus.

  4. Rechargeable thin-film lithium batteries

    SciTech Connect

    Bates, J.B.; Gruzalski, G.R.; Dudney, N.J.; Luck, C.F.; Yu, X.

    1993-09-01

    Rechargeable thin-film batteries consisting of lithium metal anodes, an amorphous inorganic electrolyte, and cathodes of lithium intercalation compounds have been fabricated and characterized. These include Li-TiS{sub 2}, Li-V{sub 2}O{sub 5}, and Li-Li{sub x}Mn{sub 2}O{sub 4} cells with open circuit voltages at full charge of about 2.5 V, 3.7 V, and 4.2 V, respectively. The realization of these robust cells, which can be cycled thousands of times, was possible because of the stability of the amorphous lithium electrolyte, lithium phosphorus oxynitride. This material has a typical composition of Li{sub 2.9}PO{sub 3.3}N{sub 0.46}and a conductivity at 25 C of 2 {mu}S/cm. The thin-film cells have been cycled at 100% depth of discharge using current densities of 5 to 100 {mu}A/cm{sup 2}. Over most of the charge-discharge range, the internal resistance appears to be dominated by the cathode, and the major source of the resistance is the diffusion of Li{sup +} ions from the electrolyte into the cathode. Chemical diffusion coefficients were determined from ac impedance measurements.

  5. Thin-film Rechargeable Lithium Batteries

    DOE R&D Accomplishments

    Bates, J. B.; Gruzalski, G. R.; Dudney, N. J.; Luck, C. F.; Yu, X.

    1993-11-01

    Rechargeable thin films batteries with lithium metal anodes, an amorphous inorganic electrolyte, and cathodes of lithium intercalation compounds have been fabricated and characterized. The cathodes include TiS{sub 2}, the {omega} phase of V{sub 2}O{sub 5}, and the cubic spinel Li{sub x}Mn{sub 2}O{sub 4} with open circuit voltages at full charge of about 2.5 V, 3.7 V, and 4.2 V, respectively. The development of these robust cells, which can be cycled thousands of times, was possible because of the stability of the amorphous lithium electrolyte, lithium phosphorus oxynitride. This material has a typical composition of Li{sub 2.9}PO{sub 3.3}N{sub 0.46} and a conductivity at 25 C of 2 {mu}S/cm. Thin film cells have been cycled at 100% depth of discharge using current densities of 2 to 100 {mu}A/cm{sup 2}. The polarization resistance of the cells is due to the slow insertion rate of Li{sup +} ions into the cathode. Chemical diffusion coefficients for Li{sup +} ions in the three types of cathodes have been estimated from the analysis of ac impedance measurements.

  6. Apparatus for laser assisted thin film deposition

    DOEpatents

    Warner, B.E.; McLean, W. II

    1996-02-13

    A pulsed laser deposition apparatus uses fiber optics to deliver visible output beams. One or more optical fibers are coupled to one or more laser sources, and delivers visible output beams to a single chamber, to multiple targets in the chamber or to multiple chambers. The laser can run uninterrupted if one of the deposition chambers ceases to operate because other chambers can continue their laser deposition processes. The laser source can be positioned at a remote location relative to the deposition chamber. The use of fiber optics permits multi-plexing. A pulsed visible laser beam is directed at a generally non-perpendicular angle upon the target in the chamber, generating a plume of ions and energetic neutral species. A portion of the plume is deposited on a substrate as a thin film. A pulsed visible output beam with a high pulse repetition frequency is used. The high pulse repetition frequency is greater than 500 Hz, and more preferably, greater than about 1000 Hz. Diamond-like-carbon (DLC) is one of the thin films produced using the apparatus. 9 figs.

  7. Iron Chalcogenide Photovoltaic Absorbers

    SciTech Connect

    Yu, Liping; Lany, Stephan; Kykyneshi, Robert; Jieratum, Vorranutch; Ravichandran, Ram; Pelatt, Brian; Altschul, Emmeline; Platt, Heather A. S.; Wager, John F.; Keszler, Douglas A.; Zunger, Alex

    2011-08-10

    An integrated computational and experimental study of FeS? pyrite reveals that phase coexistence is an important factor limiting performance as a thin-film solar absorber. This phase coexistence is suppressed with the ternary materials Fe?SiS? and Fe?GeS?, which also exhibit higher band gaps than FeS?. Thus, the ternaries provide a new entry point for development of thin-film absorbers and high-efficiency photovoltaics.

  8. Method of improving field emission characteristics of diamond thin films

    DOEpatents

    Krauss, A.R.; Gruen, D.M.

    1999-05-11

    A method of preparing diamond thin films with improved field emission properties is disclosed. The method includes preparing a diamond thin film on a substrate, such as Mo, W, Si and Ni. An atmosphere of hydrogen (molecular or atomic) can be provided above the already deposited film to form absorbed hydrogen to reduce the work function and enhance field emission properties of the diamond film. In addition, hydrogen can be absorbed on intergranular surfaces to enhance electrical conductivity of the diamond film. The treated diamond film can be part of a microtip array in a flat panel display. 3 figs.

  9. Method of improving field emission characteristics of diamond thin films

    DOEpatents

    Krauss, Alan R.; Gruen, Dieter M.

    1999-01-01

    A method of preparing diamond thin films with improved field emission properties. The method includes preparing a diamond thin film on a substrate, such as Mo, W, Si and Ni. An atmosphere of hydrogen (molecular or atomic) can be provided above the already deposited film to form absorbed hydrogen to reduce the work function and enhance field emission properties of the diamond film. In addition, hydrogen can be absorbed on intergranular surfaces to enhance electrical conductivity of the diamond film. The treated diamond film can be part of a microtip array in a flat panel display.

  10. PID Failure of c-Si and Thin-Film Modules and Possible Correlation with Leakage Currents

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    NREL PV Module Reliability Workshop, Golden, Feb 26/27, 2013 PID Failure of c-Si and Thin-Film Modules and Possible Correlation with Leakage Currents Peter Lechner Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg (ZSW) Stuttgart, Germany Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg (ZSW) ZSW is a non-profit foundation with 200 employees The focus is on Photovoltaics - Thin-Film Technology Fuel Cells and Hydrogen Technology Electrochemical

  11. Thinning and rupture of a thin liquid film on a heated surface

    SciTech Connect

    Bankoff, S.G.; Davis, S.H.

    1992-08-05

    Results on the dynamics and stability of thin films are summarized on the following topics: forced dryout, film instabilities on a horizontal plane and on inclined planes, instrumentation, coating flows, and droplet spreading. (DLC)

  12. Microstructural and mechanical characteristics of Ni–Cr thin films

    SciTech Connect

    Petley, Vijay; Sathishkumar, S.; Thulasi Raman, K.H.; Rao, G.Mohan; Chandrasekhar, U.

    2015-06-15

    Highlights: • Ni–Cr thin films of varied composition deposited by DC magnetron co-sputtering. • Thin film with Ni–Cr: 80–20 at% composition exhibits most distinct behavior. • The films were tensile tested and exhibited no cracking till the substrate yielding. - Abstract: Ni–Cr alloy thin films have been deposited using magnetron co-sputtering technique at room temperature. Crystal structure was evaluated using GIXRD. Ni–Cr solid solution upto 40 at% of Cr exhibited fcc solid solution of Cr in Ni and beyond that it exhibited bcc solid solution of Ni in Cr. X-ray diffraction analysis shows formation of (1 1 1) fiber texture in fcc and (2 2 0) fiber texture in bcc Ni–Cr thin films. Electron microscopy in both in-plane and transverse direction of the film surface revealed the presence of columnar microstructure for films having Cr upto 40 at%. Mechanical properties of the films are evaluated using nanoindentation. The modulus values increased with increase of Cr at% till the film is fcc. With further increase in Cr at% the modulus values decreased. Ni–Cr film with 20 at% Ni exhibits reduction in modulus and is correlated to the poor crystallization of the film as reflected in XRD analysis. The Ni–Cr thin film with 80 at% Ni and 20 at% Cr exhibited the most distinct columnar structure with highest electrical resistivity, indentation hardness and elastic modulus.

  13. Method of producing solution-derived metal oxide thin films

    DOEpatents

    Boyle, Timothy J.; Ingersoll, David

    2000-01-01

    A method of preparing metal oxide thin films by a solution method. A .beta.-metal .beta.-diketonate or carboxylate compound, where the metal is selected from groups 8, 9, 10, 11, and 12 of the Periodic Table, is solubilized in a strong Lewis base to form a homogeneous solution. This precursor solution forms within minutes and can be deposited on a substrate in a single layer or a multiple layers to form a metal oxide thin film. The substrate with the deposited thin film is heated to change the film from an amorphous phase to a ceramic metal oxide and cooled.

  14. Thin film electronic devices with conductive and transparent gas and moisture permeation barriers

    DOEpatents

    Simpson, Lin Jay

    2013-12-17

    A thin film stack (100, 200) is provided for use in electronic devices such as photovoltaic devices. The stack (100, 200) may be integrated with a substrate (110) such as a light transmitting/transmissive layer. A electrical conductor layer (120, 220) is formed on a surface of the substrate (110) or device layer such as a transparent conducting (TC) material layer (120,220) with pin holes or defects (224) caused by manufacturing. The stack (100) includes a thin film (130, 230) of metal that acts as a barrier for environmental contaminants (226, 228). The metal thin film (130,230) is deposited on the conductor layer (120, 220) and formed from a self-healing metal such as a metal that forms self-terminating oxides. A permeation plug or block (236) is formed in or adjacent to the thin film (130, 230) of metal at or proximate to the pin holes (224) to block further permeation of contaminants through the pin holes (224).

  15. Photovoltaics

    SciTech Connect

    Solar Energy Technologies Program

    2010-09-28

    The fact sheet summarizes the goals and activities of the DOE Solar Energy Technologies Program efforts within its photovoltaics subprogram.

  16. Photovoltaics

    SciTech Connect

    Not Available

    2008-09-01

    Summarizes the goals and activities of the DOE Solar Energy Technologies Program efforts within its photovoltaics subprogram.

  17. Continuously controlled optical band gap in oxide semiconductor thin films

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect Continuously controlled optical band gap in oxide semiconductor thin films Citation Details In-Document Search This content will become publicly available on February 2, 2017 Title: Continuously controlled optical band gap in oxide semiconductor thin films The optical band gap of the prototypical semiconducting oxide SnO2 is shown to be continuously controlled through single axis lattice expansion of nanometric films induced by low-energy helium

  18. Glow discharge plasma deposition of thin films

    DOEpatents

    Weakliem, Herbert A. (Pennington, NJ); Vossen, Jr., John L. (Bridgewater, NJ)

    1984-05-29

    A glow discharge plasma reactor for deposition of thin films from a reactive RF glow discharge is provided with a screen positioned between the walls of the chamber and the cathode to confine the glow discharge region to within the region defined by the screen and the cathode. A substrate for receiving deposition material from a reactive gas is positioned outside the screened region. The screen is electrically connected to the system ground to thereby serve as the anode of the system. The energy of the reactive gas species is reduced as they diffuse through the screen to the substrate. Reactive gas is conducted directly into the glow discharge region through a centrally positioned distribution head to reduce contamination effects otherwise caused by secondary reaction products and impurities deposited on the reactor walls.

  19. Thin films of mixed metal compounds

    DOEpatents

    Mickelsen, R.A.; Chen, W.S.

    1985-06-11

    Disclosed is a thin film heterojunction solar cell, said heterojunction comprising a p-type I-III-IV[sub 2] chalcopyrite substrate and an overlying layer of an n-type ternary mixed metal compound wherein said ternary mixed metal compound is applied to said substrate by introducing the vapor of a first metal compound to a vessel containing said substrate from a first vapor source while simultaneously introducing a vapor of a second metal compound from a second vapor source of said vessel, said first and second metals comprising the metal components of said mixed metal compound; independently controlling the vaporization rate of said first and second vapor sources; reducing the mean free path between vapor particles in said vessel, said gas being present in an amount sufficient to induce homogeneity of said vapor mixture; and depositing said mixed metal compound on said substrate in the form of a uniform composition polycrystalline mixed metal compound. 5 figs.

  20. Thin Film Femtosecond Laser Damage Competition

    SciTech Connect

    Stolz, C J; Ristau, D; Turowski, M; Blaschke, H

    2009-11-14

    In order to determine the current status of thin film laser resistance within the private, academic, and government sectors, a damage competition was started at the 2008 Boulder Damage Symposium. This damage competition allows a direct comparison of the current state of the art of high laser resistance coatings since they are tested using the same damage test setup and the same protocol. In 2009 a high reflector coating was selected at a wavelength of 786 nm at normal incidence at a pulse length of 180 femtoseconds. A double blind test assured sample and submitter anonymity so only a summary of the results are presented here. In addition to the laser resistance results, details of deposition processes, coating materials and layer count, and spectral results will also be shared.

  1. Effect of current injection into thin-film Josephson junctions

    DOE PAGES [OSTI]

    Kogan, V. G.; Mints, R. G.

    2014-11-11

    New thin-film Josephson junctions have recently been tested in which the current injected into one of the junction banks governs Josephson phenomena. One thus can continuously manage the phase distribution at the junction by changing the injected current. Our method of calculating the distribution of injected currents is also proposed for a half-infinite thin-film strip with source-sink points at arbitrary positions at the film edges. The strip width W is assumed small relative to Λ=2λ2/d;λ is the bulk London penetration depth of the film material and d is the film thickness.

  2. Effect of current injection into thin-film Josephson junctions

    SciTech Connect

    Kogan, V. G.; Mints, R. G.

    2014-11-11

    New thin-film Josephson junctions have recently been tested in which the current injected into one of the junction banks governs Josephson phenomena. One thus can continuously manage the phase distribution at the junction by changing the injected current. Our method of calculating the distribution of injected currents is also proposed for a half-infinite thin-film strip with source-sink points at arbitrary positions at the film edges. The strip width W is assumed small relative to Λ=2λ2/d;λ is the bulk London penetration depth of the film material and d is the film thickness.

  3. Titanium nitride thin films for minimizing multipactoring

    DOEpatents

    Welch, Kimo M.

    1979-01-01

    Applying a thin film coating to the surface of a workpiece, in particular, applying a coating of titanium nitride to a klystron window by means of a crossed-field diode sputtering array. The array is comprised of a cohesive group of numerous small hollow electrically conducting cylinders and is mounted so that the open ends of the cylinders on one side of the group are adjacent a titanium cathode plate. The workpiece is mounted so as to face the open ends of the other side of the group. A magnetic field is applied to the array so as to be coaxial with the cylinders and a potential is applied across the cylinders and the cathode plate, the cylinders as an anode being positive with respect to the cathode plate. The cylinders, the cathode plate and the workpiece are situated in an atmosphere of nitrogen which becomes ionized such as by field emission because of the electric field between the cylinders and cathode plate, thereby establishing an anode-cathode discharge that results in sputtering of the titanium plate. The sputtered titanium coats the workpiece and chemically combines with the nitrogen to form a titanium nitride coating on the workpiece. Gas pressure, gas mixtures, cathode material composition, voltages applied to the cathode and anode, the magnetic field, cathode, anode and workpiece spacing, and the aspect ratio (ratio of length to inner diameter) of the anode cylinders, all may be controlled to provide consistent optimum thin film coatings of various compositions and thicknesses. Another facet of the disclosure is the coating of microwave components per se with titanium nitride to reduce multipactoring under operating conditions of the components.

  4. Method for manufacturing electrical contacts for a thin-film semiconductor device

    DOEpatents

    Carlson, David E.; Dickson, Charles R.; D'Aiello, Robert V.

    1988-11-08

    A method of fabricating spaced-apart back contacts on a thin film of semiconductor material by forming strips of buffer material on top of the semiconductor material in locations corresponding to the desired dividing lines between back contacts, forming a film of metal substantially covering the semiconductor material and buffer strips, and scribing portions of the metal film overlying the buffer strips with a laser without contacting the underlying semiconductor material to separate the metal layer into a plurality of back contacts. The buffer material serves to protect the underlying semiconductor material from being damaged during the laser scribing. Back contacts and multi-cell photovoltaic modules incorporating such back contacts also are disclosed.

  5. Charge-carrier dynamics in polycrystalline thin-film CuIn{sub 1−x}Ga{sub x}Se{sub 2} photovoltaic devices after pulsed laser excitation: Interface and space-charge region analysis

    SciTech Connect

    Kuciauskas, Darius; Li, Jian V.; Kanevce, Ana; Guthrey, Harvey; Contreras, Miguel; Pankow, Joel; Dippo, Pat; Ramanathan, Kannan

    2015-05-14

    We used time-resolved photoluminescence (TRPL) spectroscopy to analyze time-domain and spectral-domain charge-carrier dynamics in CuIn{sub 1−x}Ga{sub x}Se{sub 2} (CIGS) photovoltaic (PV) devices. This new approach allowed detailed characterization for the CIGS/CdS buffer interface and for the space-charge region. We find that dynamics at the interface is dominated by diffusion, where the diffusion rate is several times greater than the thermionic emission or interface recombination rate. In the space-charge region, the electric field of the pn junction has the largest effect on the carrier dynamics. Based on the minority-carrier (electron) drift-rate dependence on the electric field strength, we estimated drift mobility in compensated CuIn{sub 1−x}Ga{sub x}Se{sub 2} (with x ≈ 0.3) as 22 ± 2 cm{sup 2}(Vs){sup −1}. Analysis developed in this study could be applied to evaluate interface and junction properties of PV and other electronic devices. For CIGS PV devices, TRPL spectroscopy could contribute to understanding effects due to absorber compositional grading, which is one of the focus areas in developing record-efficiency CIGS solar cells.

  6. CNEEC - Photovoltaics Tutorial by Prof. Clemens

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Photovoltaics

  7. Method for making surfactant-templated thin films

    DOEpatents

    Brinker, C. Jeffrey; Lu, Yunfeng; Fan, Hong You

    2010-08-31

    An evaporation-induced self-assembly method to prepare a porous, surfactant-templated, thin film by mixing a silica sol, a solvent, a surfactant, and an interstitial compound, evaporating a portion of the solvent to form a liquid, crystalline thin film mesophase material, and then removal of the surfactant template. Coating onto a substrate produces a thin film with the interstitial compound either covalently bonded to the internal surfaces of the ordered or disordered mesostructure framework or physically entrapped within the ordered or disordered mesostructured framework. Particles can be formed by aerosol processing or spray drying rather than coating onto a substrate. The selection of the interstitial compound provides a means for developing thin films for applications including membranes, sensors, low dielectric constant films, photonic materials and optical hosts.

  8. Method for making surfactant-templated thin films

    DOEpatents

    Brinker, C. Jeffrey (Albuquerque, NM); Lu, Yunfeng (San Jose, CA); Fan, Hongyou (Albuquerque, NM)

    2002-01-01

    An evaporation-induced self-assembly method to prepare a porous, surfactant-templated, thin film by mixing a silica sol, a solvent, a surfactant, and an interstitial compound, evaporating a portion of the solvent to form a liquid, crystalline thin film mesophase material, and then removal of the surfactant template. Coating onto a substrate produces a thin film with the interstitial compound either covalently bonded to the internal surfaces of the ordered or disordered mesostructure framework or physically entrapped within the ordered or disordered mesostructured framework. Particles can be formed by aerosol processing or spray drying rather than coating onto a substrate. The selection of the interstitial compound provides a means for developing thin films for applications including membranes, sensors, low dielectric constant films, photonic materials and optical hosts.

  9. Biaxially-Textured Photovoltaic Film Crystal Silicon on Ion Beam Assisted Deposition CaF2 Seed Layers on Glass

    SciTech Connect

    Groves, J. R.; Li, J. B.; Clemens, B. M.; LaSalvia, V.; Hasoon, F.; Branz, H. M.; Teplin, C. W.

    2012-05-01

    We grow biaxially textured heteroepitaxial crystal silicon (c-Si) films on display glass as a low-cost photovoltaic material. We first fabricate textured CaF{sub 2} seed layers using ion-beam assisted deposition, then coat the CaF{sub 2} with a thin, evaporated epitaxial Ge buffer and finally deposit heteroepitaxial silicon on the Ge. The silicon is grown by hot-wire chemical vapor deposition, a high-rate, scalable epitaxy technology. Electron and X-ray diffraction confirm the biaxial texture of the CaF{sub 2} and epitaxial growth of the subsequent layers. Transmission electron microscopy reveals columnar silicon grains about 500 nm across. We fabricate a proof-of-concept epitaxial film c-Si solar cell with an open circuit voltage of 375 mV that is limited by minority carrier lifetime.

  10. Thermoelastic response of thin metal films and their adjacent materials

    SciTech Connect

    Kang, S.; Yoon, Y.; Kim, J.; Kim, W.

    2013-01-14

    A pulsed laser beam applied to a thin metal film is capable of launching an acoustic wave due to thermal expansion. Heat transfer from the thin metal film to adjacent materials can also induce thermal expansion; thus, the properties of these adjacent materials (as well as the thin metal film) should be considered for a complete description of the thermoelastic response. Here, we show that adjacent materials with a small specific heat and large thermal expansion coefficient can generate an enhanced acoustic wave and we demonstrate a three-fold increase in the peak pressure of the generated acoustic wave on substitution of parylene for polydimethylsiloxane.

  11. Mimicking Conjugated Polymer Thin Film Photophysics with a Well-Defined Triblock Copolymer in Solution

    SciTech Connect

    Brazard, Johanna; Ono, Robert J.; Bielawski, Christopher W.; Barbara, Paul F.; Vanden Bout, David A.

    2013-04-25

    Conjugated polymers (CPs) are promising materials for use in electronic applications, such as low-cost, easily processed organic photovoltaic (OPV) devices. Improving OPV efficiencies is hindered by a lack of a fundamental understanding of the photophysics in CP-based thin films that is complicated by their heterogeneous nanoscale morphologies. Here, we report on a poly(3-hexylthiophene)-block-poly(tert-butyl acrylate)-block-poly(3-hexylthiophene) rodcoilrod triblock copolymer. In good solvents, this polymer resembles solutions of P3HT; however, upon the addition of a poor solvent, the two P3HT chains within the triblock copolymer collapse, affording a material with electronic spectra identical to those of a thin film of P3HT. Using this new system as a model for thin films of P3HT, we can attribute the low fluorescence quantum yield of films to the presence of a charge-transfer state, providing fundamental insights into the condensed phase photophysics that will help to guide the development of the next generation of materials for OPVs.

  12. Photovoltaic

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Distributed Energy Technology Lab Microsystems and Engineering Sciences Applications National Solar Thermal Test Facility Nuclear Energy Systems LaboratoryBrayton Lab Photovoltaic ...

  13. Optical, electrical and surface properties of annealed CdO:Mg thin films prepared by spray pyrolysis

    SciTech Connect

    Karakaya, Seniye E-mail: oozbas@ogu.edu.tr; Ozbas, Omer E-mail: oozbas@ogu.edu.tr

    2013-12-16

    The use of transparent conducting oxides in optoelectronic and photovoltaic devices has encouraged research on this field in recent years. Especially, cadmium oxide is a promising material for solar cell application but also for photodiodes and gas sensors. Mg doped CdO (CdO:Mg) films have been prepared on glass substrates by the ultrasonic spray pyrolysis (USP) technique. After the production, the films have been annealed in air atmosphere at 475°C and half hour. Results on surface, optical and electrical properties of the films as a function of the thermal annealing have been reported. Thicknesses of the films have been determined by the filmetrics thin film measurement system. Transmission and absorbance spectra have been taken by UV-vis spectrophotometer. Atomic Force Microscopy (AFM) analysis indicates that the roughness of the surface decreases upon increasing Mg concentration. The minimum resistivity value of the films was 2×10{sup −3} Ω cm.

  14. Processing and modeling issues for thin-film solar cell devices: Annual subcontract report, January 16, 1995 -- January 15, 1996

    SciTech Connect

    Birkmire, R.W.; Phillips, J.E.; Buchanan, W.A.; Eser, E.; Hegedus, S.S.; McCandless, B.E.; Meyers, P.V.; Shafarman, W.N.

    1996-08-01

    The overall mission of the Institute of Energy Conversion is the development of thin film photovoltaic cells, modules, and related manufacturing technology and the education of students and professionals in photovoltaic technology. The objectives of this four-year NREL subcontract are to advance the state of the art and the acceptance of thin film PV modules in the areas of improved technology for thin film deposition, device fabrication, and material and device characterization and modeling, relating to solar cells based on CuInSe{sub 2} and its alloys, on a-Si and its alloys, and on CdTe. In the area of CuInSe{sub 2} and its alloys, EEC researchers have produced CuIn{sub 1-x}GaxSe{sub 2} films by selenization of elemental and alloyed films with H{sub 2}Se and Se vapor and by a wide variety of process variations employing co-evaporation of the elements. Careful design, execution and analysis of these experiments has led to an improved understanding of the reaction chemistry involved, including estimations of the reaction rate constants. Investigation of device fabrication has also included studies of the processing of the Mo, US and ZnO deposition parameters and their influence on device properties. An indication of the success of these procedures was the fabrication of a 15% efficiency CuIn{sub 1-x}GaxSe{sub 2} solar cell.

  15. TI--CR--AL--O thin film resistors

    DOEpatents

    Jankowski, Alan F.; Schmid, Anthony P.

    2000-01-01

    Thin films of Ti--Cr--Al--O are used as a resistor material. The films are rf sputter deposited from ceramic targets using a reactive working gas mixture of Ar and O.sub.2. Resistivity values from 10.sup.4 to 10.sup.10 Ohm-cm have been measured for Ti--Cr--Al--O film <1 .mu.m thick. The film resistivity can be discretely selected through control of the target composition and the deposition parameters. The application of Ti--Cr--Al--O as a thin film resistor has been found to be thermodynamically stable, unlike other metal-oxide films. The Ti--Cr--Al--O film can be used as a vertical or lateral resistor, for example, as a layer beneath a field emission cathode in a flat panel display; or used to control surface emissivity, for example, as a coating on an insulating material such as vertical wall supports in flat panel displays.

  16. Sol-gel-derived Epitaxial Nanocomposite Thin Films with Large...

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Sol-gel-derived Epitaxial Nanocomposite Thin Films with Large Sharp Magnetoelectric Effect Home Author: B. Liu, T. Sun, J. He, V. P. Dravid Year: 2010 Abstract: Nanostructures of...

  17. Self-Assembling Process for Fabricating Tailored Thin Films

    ScienceCinema

    None

    2016-07-12

    A simple, economical nanotechnology coating process that enables the development of nanoparticle thin films with architectures and properties unattainable by any other processing method. 2007 R&D 100 winner (SAND2007-1878P)

  18. CeO2 Thin Films Nan Yang, Alex Belianinov...

    Office of Scientific and Technical Information (OSTI)

    ... transfer 3 of ions and energy can take place, especially upon variation of the gas environment. In addition, in the case of our thin films, the large in-plane geometry factor ...

  19. Overview and Challenges of Thin Film Solar Electric Technologies

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    ... Thin-film PV technology status is also discussed in details. In addition, R&D and technology challenges in all three areas are elucidated in this paper. The worldwide estimated ...

  20. Orientational Analysis of Molecules in Thin Films | Stanford...

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Molecules in Thin Films Monday, September 17, 2012 - 10:00am SSRL Bldg. 137, room 226 Daniel Kaefer The synchrotron-based X-ray absorption spectroscopy is a very powerful tool to...

  1. Self-Assembling Process for Fabricating Tailored Thin Films

    ScienceCinema

    Sandia

    2009-09-01

    A simple, economical nanotechnology coating process that enables the development of nanoparticle thin films with architectures and properties unattainable by any other processing method. 2007 R&D 100 winner (SAND2007-1878P)

  2. Processing Materials Devices and Diagnostics for Thin Film Photovoltai...

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    ... describes results achieved under this subcontract to develop and understand thin film solar cell technology associated to CuInSe 2 and related alloys, a-Si and its alloys and CdTe. ...

  3. Improving the Cycling Life of Aluminum and Germanium Thin Films...

    Office of Scientific and Technical Information (OSTI)

    in Li-Ion Batteries. Citation Details In-Document Search Title: Improving the Cycling Life of Aluminum and Germanium Thin Films for use as Anodic Materials in Li-Ion Batteries. ...

  4. Improving the Cycling Life of Aluminum and Germanium Thin Films...

    Office of Scientific and Technical Information (OSTI)

    Li-Ion Batteries. Citation Details In-Document Search Title: Improving the Cycling Life of Aluminum and Germanium Thin Films for use as Anodic Materials in Li-Ion Batteries. You ...

  5. Flexible, transparent thin film transistors raise hopes for flexible...

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    of the thin-film transistor, fabricated using single-atom-thick layers of graphene and tungsten diselenide, among other materials. The white scale bar shows 5 microns, which is...

  6. Guided Self-Assembly of Gold Thin Films

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Guided Self-Assembly of Gold Thin Films Print Nanoparticles-man-made atoms with unique optical, electrical, and mechanical properties-have become key components in many fields of...

  7. Overview and Challenges of Thin Film Solar Electric Technologies

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    ... 1000 MW per year of a-Si power modules. The new company is called Best Solar and is based in China. 3 Thin-Film ... The processes are close-space sublimation, ...

  8. Thin transparent conducting films of cadmium stannate

    DOEpatents

    Wu, Xuanzhi; Coutts, Timothy J.

    2001-01-01

    A process for preparing thin Cd.sub.2 SnO.sub.4 films. The process comprises the steps of RF sputter coating a Cd.sub.2 SnO.sub.4 layer onto a first substrate; coating a second substrate with a CdS layer; contacting the Cd.sub.2 SnO.sub.4 layer with the CdS layer in a water- and oxygen-free environment and heating the first and second substrates and the Cd.sub.2 SnO.sub.4 and CdS layers to a temperature sufficient to induce crystallization of the Cd.sub.2 SnO.sub.4 layer into a uniform single-phase spinel-type structure, for a time sufficient to allow full crystallization of the Cd.sub.2 SnO.sub.4 layer at that temperature; cooling the first and second substrates to room temperature; and separating the first and second substrates and layers from each other. The process can be conducted at temperatures less than 600.degree. C., allowing the use of inexpensive soda lime glass substrates.

  9. Polarization and Dielectric Study of Methylammonium Lead Iodide Thin Film

    Office of Scientific and Technical Information (OSTI)

    to Reveal its Nonferroelectric Nature under Solar Cell Operating Conditions (Journal Article) | SciTech Connect Journal Article: Polarization and Dielectric Study of Methylammonium Lead Iodide Thin Film to Reveal its Nonferroelectric Nature under Solar Cell Operating Conditions Citation Details In-Document Search Title: Polarization and Dielectric Study of Methylammonium Lead Iodide Thin Film to Reveal its Nonferroelectric Nature under Solar Cell Operating Conditions Researchers have debated

  10. Charge Transport in Thin Film Ionomers | Argonne Leadership Computing

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Facility Model of a thin film Nafion ionomer (green translucent surface) in a fuel cell membrane/catalyst interface Model of a thin film Nafion ionomer (green translucent surface) in a fuel cell membrane/catalyst interface that forms interfaces with both the electrode and air (bottom and top, respectively). Hydrated excess protons (orange meshes) are shown solvated within Nafion water domains (blue translucent surface). Chris Knight, Argonne National Laboratory; John Savage and Gregory Voth,

  11. Lead-free Thin Film Piezoelectric Devices - Energy Innovation Portal

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Vehicles and Fuels Vehicles and Fuels Find More Like This Return to Search Lead-free Thin Film Piezoelectric Devices Lawrence Berkeley National Laboratory Contact LBL About This Technology Technology Marketing SummaryIn a breakthrough discovery, Ramamoorthy Ramesh, Robert Zeches, and their research team at Berkeley Lab have developed a technology for lead-free piezoelectric materials using thin-film bismuth ferrite. In addition to being less hazardous to human health and the environment, the

  12. Simple flash evaporator for making thin films of compounds

    SciTech Connect

    Hemanadhan, M.; Bapanayya, Ch.; Agarwal, S. C. [Department of Physics, Indian Institute of Technology, Kanpur 208016 (India)

    2010-07-15

    A simple and compact arrangement for flash evaporation is described. It uses a cell phone vibrator for powder dispensing that can be incorporated into a vacuum deposition chamber without any major alterations. The performance of the flash evaporation system is checked by making thin films of the optical memory chalcogenide glass Ge{sub 2}Sb{sub 2}Te{sub 5} (GST). Energy dispersive x-ray analysis shows that the flash evaporation preserves the stoichiometry in thin films.

  13. Scanned probe microscopy for thin film superconductor development

    SciTech Connect

    Moreland, J.

    1996-12-31

    Scanned probe microscopy is a general term encompassing the science of imaging based on piezoelectric driven probes for measuring local changes in nanoscale properties of materials and devices. Techniques like scanning tunneling microscopy, atomic force microscopy, and scanning potentiometry are becoming common tools in the production and development labs in the semiconductor industry. The author presents several examples of applications specific to the development of high temperature superconducting thin films and thin-film devices.

  14. Enhanced optoelectronic quality of perovskite thin films with

    Office of Scientific and Technical Information (OSTI)

    hypophosphorous acid for planar heterojunction solar cells (Journal Article) | SciTech Connect Journal Article: Enhanced optoelectronic quality of perovskite thin films with hypophosphorous acid for planar heterojunction solar cells Citation Details In-Document Search Title: Enhanced optoelectronic quality of perovskite thin films with hypophosphorous acid for planar heterojunction solar cells Solution-processed metal halide perovskite semiconductors, such as CH3NH3PbI3, have exhibited

  15. Structure of Molecular Thin Films for Organic Electronics | Stanford

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Synchrotron Radiation Lightsource Structure of Molecular Thin Films for Organic Electronics Friday, April 6, 2012 - 1:00pm SSRL Conference Room 137-322 Bert Nickel, Physics Faculty and CeNS, Ludwig-Maximilians-University, München Thin films made out of conjugated small molecules and polymers exhibit very interesting semiconducting properties. While some applications such as light emitting diodes (OLED) are already on the market, other application such as solar cells, integrated circuits,

  16. Indium Oxide Thin Films by Atomic Layer Deposition Using Trimethylindium

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    and Ozone | Argonne National Laboratory Indium Oxide Thin Films by Atomic Layer Deposition Using Trimethylindium and Ozone Title Indium Oxide Thin Films by Atomic Layer Deposition Using Trimethylindium and Ozone Publication Type Journal Article Year of Publication 2016 Authors Mane, AU, Allen, AJ, Kanjolia, RK, Elam, JW Journal Journal of Physical Chemistry C Volume 120 Start Page 9874 Issue 18 Pagination 10 Date Published 04182016 Abstract We investigated the atomic layer deposition (ALD)

  17. Methods for preparing colloidal nanocrystal-based thin films

    DOEpatents

    Kagan, Cherie R.; Fafarman, Aaron T.; Choi, Ji-Hyuk; Koh, Weon-kyu; Kim, David K.; Oh, Soong Ju; Lai, Yuming; Hong, Sung-Hoon; Saudari, Sangameshwar Rao; Murray, Christopher B.

    2016-05-10

    Methods of exchanging ligands to form colloidal nanocrystals (NCs) with chalcogenocyanate (xCN)-based ligands and apparatuses using the same are disclosed. The ligands may be exchanged by assembling NCs into a thin film and immersing the thin film in a solution containing xCN-based ligands. The ligands may also be exchanged by mixing a xCN-based solution with a dispersion of NCs, flocculating the mixture, centrifuging the mixture, discarding the supernatant, adding a solvent to the pellet, and dispersing the solvent and pellet to form dispersed NCs with exchanged xCN-ligands. The NCs with xCN-based ligands may be used to form thin film devices and/or other electronic, optoelectronic, and photonic devices. Devices comprising nanocrystal-based thin films and methods for forming such devices are also disclosed. These devices may be constructed by depositing NCs on to a substrate to form an NC thin film and then doping the thin film by evaporation and thermal diffusion.

  18. Progress in High-Performance PV: Polycrystalline Thin-Film Tandem Cells

    SciTech Connect

    Symko-Davies, M.

    2004-08-01

    The High-Performance Photovoltaic (HiPerf PV) Project was initiated by the U.S. Department of Energy to substantially increase the viability of PV for cost-competitive applications. The goal is that PV will contribute significantly to the U.S. and world energy supply and environmental enhancement in the 21st century. The HiPerf PV Project aims at exploring the ultimate performance limits of existing PV technologies, approximately doubling their sunlight-to-electricity conversion efficiencies during its course, to accelerate and enhance their impact in the marketplace. To accomplish this, the National Center for Photovoltaics (NCPV) directs in-house and subcontracted research in high-performance polycrystalline thin-film and multijunction concentrator devices. This paper will describe progress of the subcontractor and in-house R&D on critical pathways for a PV technology having a high potential to reach cost-competitiveness goals: 25%-efficient, low-cost polycrystalline thin-film tandems for large-area, flat-plate modules.

  19. Thin aerogel films for optical, thermal, acoustic, and electronic applications

    SciTech Connect

    Hrubesh, L.W.; Poco, J.F.

    1994-09-01

    Aerogels are a special class of continuously porous solid materials which are characterized by nanometer size particles and pores. Typically, aerogels are made using sol-gel chemistry to form a solvent filled, high porosity gel that is dried by removing the solvent without collapsing the tenuous solid phase. As bulk materials, aerogels are known to have many exceptional, and even some unique physical properties. Aerogels provide the highest thermal insulation and lowest dielectric constant of any other material known. However, some important applications require the aerogels in the form of thin films or sheets. For example, electronic applications require micrometer thin aerogel films bonded to a substrate, and others require thicker films, either on a substrate or as free standing sheets. Special methods are required to make aerogel thin films or sheets. In this paper, the authors discuss the special conditions needed to fabricate thin aerogel films and they describe methods to make films and thin sheets. They also give some specific applications for which aerogel films are being developed.

  20. Geometric shape control of thin film ferroelectrics and resulting structures

    DOEpatents

    McKee, Rodney A.; Walker, Frederick J.

    2000-01-01

    A monolithic crystalline structure and a method of making involves a semiconductor substrate, such as silicon, and a ferroelectric film, such as BaTiO.sub.3, overlying the surface of the substrate wherein the atomic layers of the ferroelectric film directly overlie the surface of the substrate. By controlling the geometry of the ferroelectric thin film, either during build-up of the thin film or through appropriate treatment of the thin film adjacent the boundary thereof, the in-plane tensile strain within the ferroelectric film is relieved to the extent necessary to permit the ferroelectric film to be poled out-of-plane, thereby effecting in-plane switching of the polarization of the underlying substrate material. The method of the invention includes the steps involved in effecting a discontinuity of the mechanical restraint at the boundary of the ferroelectric film atop the semiconductor substrate by, for example, either removing material from a ferroelectric film which has already been built upon the substrate, building up a ferroelectric film upon the substrate in a mesa-shaped geometry or inducing the discontinuity at the boundary by ion beam deposition techniques.

  1. Front and backside processed thin film electronic devices

    DOEpatents

    Evans, Paul G.; Lagally, Max G.; Ma, Zhenqiang; Yuan, Hao-Chih; Wang, Guogong; Eriksson, Mark A.

    2012-01-03

    This invention provides thin film devices that have been processed on their front- and backside. The devices include an active layer that is sufficiently thin to be mechanically flexible. Examples of the devices include back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

  2. Nanoimprinted Diffraction Gratings for Light Trapping in Crystal-Silicon Film Photovoltaics

    SciTech Connect

    Dirk Weiss

    2010-11-29

    Crystal-silicon (c-Si) film photovoltaics hold the promise of combining the advantages of state-of-the-art wafer-silicon technology with the scalability and the inherently much lower cost of thin-film solar technologies. In the thickness range of 2-20 ?¼m very effective light trapping is essential to absorb sufficient red and near-infrared (NIR) light and reach targeted efficiencies of 16%â??18%, as defined by the U.S. National Solar Technology Roadmap. One proposed method is diffractive light trapping, which, at least in certain wavelength ranges, can theoretically outperform light trapping through random scattering at a rough surface or interface. The goals of this project were (1) to develop a nanoimprinting process for a high-refractive-index dielectric material, (2) to fabricate diffraction gratings as back-reflectors using this material, and (3) to demonstrate for a 2 ?¼m c-Si film an improvement in AM1.5 photon absorption of at least 80% relative to single-pass absorption. We achieved goals (1) and (2). We developed a soft-imprint method for sol-based titanium dioxide precursor films (index range 2.3-2.4) and integrated imprinted films in thin-film silicon devices. We did not fully reach goal (3): depending on the model used for interpretation of the optical experimental data, AM1.5 photon absorption was improved by only 53% (coherent electromagnetic model) to 66% (non-coherent ray-tracing model). When compared to a metallized flat reference film (double-pass absorption), the improvement due to the grating is only 6%, if the (more conservative) electromagnetic model is used. Other important achievements from this project were: -We perfected an imprinting method for another ceramic material, aluminum oxide phosphate, which is index-matched with glass. -We tested diffractive light trapping at different incidence angles and found positive evidence for light trapping for angles up to 50?°, although the light-trapping efficiency decreased with increasing

  3. Giant optical enhancement of strain gradient in ferroelectric BiFeO3 thin films and its physical origin

    DOE PAGES [OSTI]

    Li, Yuelin; Adamo, C.; Chen, Pice; Evans, Paul G.; Nakhmanson, Serge M.; Parker, William; Rowland, Clare E.; Schaller, Richard D.; Schlom, Darrell G.; Walko, Donald A.; et al

    2015-11-20

    Through mapping of the spatiotemporal strain profile in ferroelectric BiFeO3 epitaxial thin films, we report an optically initiated dynamic enhancement of the strain gradient of 105–106 m-1 that lasts up to a few ns depending on the film thickness. Correlating with transient optical absorption measurements, the enhancement of the strain gradient is attributed to a piezoelectric effect driven by a transient screening field mediated by excitons. In conclusion, these findings not only demonstrate a new possible way of controlling the flexoelectric effect, but also reveal the important role of exciton dynamics in photostriction and photovoltaic effects in ferroelectrics.

  4. Cross-sectional electrostatic force microscopy of thin-film solar cells

    SciTech Connect

    Ballif, C.; Moutinho, H. R.; Al-Jassim, M. M.

    2001-01-15

    In a recent work, we showed that atomic force microscopy (AFM) is a powerful technique to image cross sections of polycrystalline thin films. In this work, we apply a modification of AFM, namely, electrostatic force microscopy (EFM), to investigate the electronic properties of cleaved II--VI and multijunction thin-film solar cells. We cleave the devices in such a way that they are still working with their nominal photovoltaic efficiencies and can be polarized for the measurements. This allows us to differentiate between surface effects (work function and surface band bending) and bulk device properties. In the case of polycrystalline CdTe/CdS/SnO{sub 2}/glass solar cells, we find a drop of the EFM signal in the area of the CdTe/CdS interface ({+-}50 nm). This drop varies in amplitude and sign according to the applied external bias and is compatible with an n-CdS/p-CdTe heterojunction model, thereby invalidating the possibility of a deeply buried n-p CdTe homojunction. In the case of a triple-junction GaInP/GaAs/Ge device, we observe a variation of the EFM signal linked to both the material work-function differences and to the voltage bias applied to the cell. We attempt a qualitative explanation of the results and discuss the implications and difficulties of the EFM technique for the study of such thin-film devices.

  5. Composite polymeric film and method for its use in installing a very-thin polymeric film in a device

    DOEpatents

    Duchane, D.V.; Barthell, B.L.

    1982-04-26

    A composite polymeric film and a method for its use in forming and installing a very thin (< 10 ..mu..m) polymeric film are disclosed. The composite film consists of a thin film layer and a backing layer. The backing layer is soluble in a solvent in which the thin film layer is not soluble. In accordance with the method, the composite film is installed in a device in the same position in which it is sought to finally emplace the thin film. The backing layer is then selectiely dissolved in the solvent to leave the insoluble thin film layer as an unbacked film. The method permits a very thin film to e successfully installed in devices where the fragility of the film would preclude handling and installation by conventional methods.

  6. Composite polymeric film and method for its use in installing a very thin polymeric film in a device

    DOEpatents

    Duchane, David V.; Barthell, Barry L.

    1984-01-01

    A composite polymeric film and a method for its use in forming and installing a very thin (<10 .mu.m) polymeric film are disclosed. The composite film consists of a thin film layer and a backing layer. The backing layer is soluble in a solvent in which the thin film layer is not soluble. In accordance with the method, the composite film is installed in a device in the same position in which it is sought to finally emplace the thin film. The backing layer is then selectively dissolved in the solvent to leave the insoluble thin film layer as an unbacked film. The method permits a very thin film to be successfully installed in devices where the fragility of the film would preclude handling and installation by conventional methods.

  7. Nucleation of fcc Ta when heating thin films

    DOE PAGES [OSTI]

    Janish, Matthew T.; Mook, William M.; Carter, C. Barry

    2014-10-25

    Thin tantalum films have been studied during in-situ heating in a transmission electron microscope. Diffraction patterns from the as-deposited films were typical of amorphous materials. Crystalline grains were observed to form when the specimen was annealed in-situ at 450C. Particular attention was addressed to the formation and growth of grains with the face-centered cubic (fcc) crystal structure. As a result, these observations are discussed in relation to prior work on the formation of fcc Ta by deformation and during thin film deposition.

  8. Nucleation of fcc Ta when heating thin films

    SciTech Connect

    Janish, Matthew T.; Mook, William M.; Carter, C. Barry

    2014-10-25

    Thin tantalum films have been studied during in-situ heating in a transmission electron microscope. Diffraction patterns from the as-deposited films were typical of amorphous materials. Crystalline grains were observed to form when the specimen was annealed in-situ at 450°C. Particular attention was addressed to the formation and growth of grains with the face-centered cubic (fcc) crystal structure. As a result, these observations are discussed in relation to prior work on the formation of fcc Ta by deformation and during thin film deposition.

  9. Back contact to film silicon on metal for photovoltaic cells

    DOEpatents

    Branz, Howard M.; Teplin, Charles; Stradins, Pauls

    2013-06-18

    A crystal oriented metal back contact for solar cells is disclosed herein. In one embodiment, a photovoltaic device and methods for making the photovoltaic device are disclosed. The photovoltaic device includes a metal substrate with a crystalline orientation and a heteroepitaxial crystal silicon layer having the same crystal orientation of the metal substrate. A heteroepitaxial buffer layer having the crystal orientation of the metal substrate is positioned between the substrate and the crystal silicon layer to reduce diffusion of metal from the metal foil into the crystal silicon layer and provide chemical compatibility with the heteroepitaxial crystal silicon layer. Additionally, the buffer layer includes one or more electrically conductive pathways to electrically couple the crystal silicon layer and the metal substrate.

  10. Deuterium phase behavior in thin-film Pd

    SciTech Connect

    Munter, A.E.; Heuser, B.J.

    1998-07-01

    The absorption of deuterium from the gas phase into two Pd thin films 668 {Angstrom} and 1207 {Angstrom} thick was measured at room temperature with {ital in situ} neutron reflectometry. Room-temperature solubility isothermal curves, out-of-plane film expansion, and deuterium depth profiles were determined from fits to the neutron reflectivity data. The measurements demonstrate that the deuterium solubility behavior, both in solid solution and within the two-phase region, is strongly perturbed by the thin-film geometry, consistent with previous solubility measurements in the published literature. The phase behavior investigated here was observed to depend on film thickness and on deuterium cycling through the two-phase region. The 668-{Angstrom} film exhibited the greatest initial phase perturbation and most significant changes upon cycling. Upon repeated cycling, both films approach nearly identical deuterium isothermal solubility and out-of-plane expansion behaviors. The observed equilibrium out-of-plane expansion behavior was consistent with the films expanding under an in-plane clamping constraint imposed by the substrate. The effect of this substrate constraining force is to amplify the out-of-plane expansion beyond that expected in bulk Pd. Taken together, these measurements implicate the film/substrate interfacial clamping interaction as the origin of the perturbed hydrogen phase behavior in thin-film geometry. {copyright} {ital 1998} {ital The American Physical Society}

  11. Photovoltaic Energy Program Overview Fiscal Year 1996

    SciTech Connect

    1997-05-01

    Significant activities in the National Photovoltaic Program are reported for each of the three main program elements. In Research and Development, advances in thin-film materials and crystalline silicon materials are described. The Technology Development report describes activities in photovoltaic manufacturing technology, industrial expansion, module and array development, and testing photovoltaic system components. Systems Engineering and Applications projects described include projects with government agencies, projects with utilities, documentation of performance for international applications, and product certification.

  12. Flexible cadmium telluride thin films grown on electron-beam-irradiated graphene/thin glass substrates

    SciTech Connect

    Seo, Won-Oh; Kim, Jihyun; Koo, Yong Hwan; Kim, Byungnam; Lee, Byung Cheol; Kim, Donghwan

    2014-08-25

    We demonstrate the close-spaced sublimation growth of polycrystalline cadmium telluride (CdTe) thin films on a flexible graphene electrode/thin glass substrate structure. Prior to the growth of CdTe films, chemical-vapor-deposited graphene was transferred onto a flexible glass substrate and subjected to electron-beam irradiation at an energy of 0.2 MeV in order to intentionally introduce the defects into it in a controlled manner. Micro-Raman spectroscopy and sheet resistance measurements were employed to monitor the damage and disorder in the electron-beam irradiated graphene layers. The morphology and optical properties of the CdTe thin films deposited on a graphene/flexible glass substrate were systematically characterized. The integration of the defective graphene layers with a flexible glass substrate can be a useful platform to grow various thin-film structures for flexible electronic and optoelectronic devices.

  13. Advances in Thin-Film Proton-Reaction Cell Experiments

    SciTech Connect

    George H. Miley; Giovanna Selvaggi; Andy Tate; Carlos Castano

    2000-11-12

    Thin-film electrodes (layers of the order of thousands of angstroms) offer several very important advantages for cold fusion research: Good reproducibility has been demonstrated, an extremely high power density is obtained in the thin film, and reaction rates can be optimized by appropriate selection of materials and interfaces. The motivation for thin films stems from the Swimming Electron Theory, which predicts that enhanced reaction rates can occur with the careful selection of interface materials. Recent experiments have concentrated on the measurement of the H or D loading (atoms H/atom metal), using thin (1-m-long, 50-{mu}m-diam) wires to simulate thin films. Wires facilitate measurement of the loading as a function of time during a run by use of a simple resistivity measurement. These experiments show that excess heat production is associated with a dynamic resistivity oscillation, both being suddenly initiated (coincidence within 2 to 3 s) when a D/Pd loading ratio >0.9 9 is achieved. The counterpart of these experiments involves use of a unique compact electrode design where thin films are coated onto a small glass slide to provide both the anode and cathode. Experiments with these compact electrodes have consistently produced >100 W/cm{sup 3} metal.

  14. High mobility single-crystalline-like GaAs thin films on inexpensive flexible metal substrates by metal-organic chemical vapor deposition

    SciTech Connect

    Dutta, P. Rathi, M.; Gao, Y.; Yao, Y.; Selvamanickam, V.; Zheng, N.; Ahrenkiel, P.; Martinez, J.

    2014-09-01

    We demonstrate heteroepitaxial growth of single-crystalline-like n and p-type doped GaAs thin films on inexpensive, flexible, and light-weight metal foils by metal-organic chemical vapor deposition. Single-crystalline-like Ge thin film on biaxially textured templates made by ion beam assisted deposition on metal foil served as the epitaxy enabling substrate for GaAs growth. The GaAs films exhibited strong (004) preferred orientation, sharp in-plane texture, low grain misorientation, strong photoluminescence, and a defect density of ?10{sup 7?}cm{sup ?2}. Furthermore, the GaAs films exhibited hole and electron mobilities as high as 66 and 300?cm{sup 2}/V-s, respectively. High mobility single-crystalline-like GaAs thin films on inexpensive metal substrates can pave the path for roll-to-roll manufacturing of flexible III-V solar cells for the mainstream photovoltaics market.

  15. Thin-film absorber for a solar collector

    SciTech Connect

    Wilhelm, W.G.

    1982-02-09

    This invention pertains to energy absorbers for solar collectors, and more particularly to high performance thin film absorbers. The solar collectors comprising the absorber of this invention overcome several problems seen in current systems, such as excessive hardware, high cost and unreliability. In the preferred form, the apparatus features a substantially rigid planar frame with a thin film window bonded to one planar side of the frame. An absorber in accordance with the present invention is comprised of two thin film layers that are sealed perimetrically. In a preferred embodiment, thin film layers are formed from a metal/plastic laminate. The layers define a fluid-tight planar envelope of large surface area to volume through which a heat transfer fluid flows. The absorber is bonded to the other planar side of the frame. The thin film construction of the absorber assures substantially full envelope wetting and thus good efficiency. The window and absorber films stress the frame adding to the overall strength of the collector.

  16. Cadmium-free junction fabrication process for CuInSe.sub.2 thin film solar cells

    DOEpatents

    Ramanathan, Kannan V.; Contreras, Miguel A.; Bhattacharya, Raghu N.; Keane, James; Noufi, Rommel

    1999-01-01

    The present invention provides an economical, simple, dry and controllable semiconductor layer junction forming process to make cadmium free high efficiency photovoltaic cells having a first layer comprised primarily of copper indium diselenide having a thin doped copper indium diselenide n-type region, generated by thermal diffusion with a group II(b) element such as zinc, and a halide, such as chlorine, and a second layer comprised of a conventional zinc oxide bilayer. A photovoltaic device according the present invention includes a first thin film layer of semiconductor material formed primarily from copper indium diselenide. Doping of the copper indium diselenide with zinc chloride is accomplished using either a zinc chloride solution or a solid zinc chloride material. Thermal diffusion of zinc chloride into the copper indium diselenide upper region creates the thin n-type copper indium diselenide surface. A second thin film layer of semiconductor material comprising zinc oxide is then applied in two layers. The first layer comprises a thin layer of high resistivity zinc oxide. The second relatively thick layer of zinc oxide is doped to exhibit low resistivity.

  17. Shape variation of micelles in polymer thin films

    SciTech Connect

    Zhou, Jiajia Shi, An-Chang

    2014-01-14

    The equilibrium properties of block copolymer micelles confined in polymer thin films are investigated using self-consistent field theory. The theory is based on a model system consisting of AB diblock copolymers and A homopolymers. Two different methods, based on the radius of gyration tensor and the spherical harmonics expansion, are used to characterize the micellar shape. The results reveal that the morphology of micelles in thin films depends on the thickness of the thin films and the selectivity of the confining surfaces. For spherical (cylindrical) micelles, the spherical (cylindrical) symmetry is broken by the presence of the one-dimensional confinement, whereas the top-down symmetry is broken by the selectivity of the confining surfaces. Morphological transitions from spherical or cylindrical micelles to cylinders or lamella are predicted when the film thickness approaches the micellar size.

  18. Thin-film Rechargeable Lithium Batteries for Implantable Devices

    DOE R&D Accomplishments

    Bates, J. B.; Dudney, N. J.

    1997-05-01

    Thin films of LiCoO{sub 2} have been synthesized in which the strongest x ray reflection is either weak or missing, indicating a high degree of preferred orientation. Thin film solid state batteries with these textured cathode films can deliver practical capacities at high current densities. For example, for one of the cells 70% of the maximum capacity between 4.2 V and 3 V ({approximately}0.2 mAh/cm{sup 2}) was delivered at a current of 2 mA/cm{sup 2}. When cycled at rates of 0.1 mA/cm{sup 2}, the capacity loss was 0.001%/cycle or less. The reliability and performance of Li LiCoO{sub 2} thin film batteries make them attractive for application in implantable devices such as neural stimulators, pacemakers, and defibrillators.

  19. Thin-film transistors based on p-type Cu{sub 2}O thin films produced at room temperature

    SciTech Connect

    Fortunato, Elvira; Figueiredo, Vitor; Barquinha, Pedro; Elamurugu, Elangovan; Goncalves, Goncalo; Martins, Rodrigo; Park, Sang-Hee Ko; Hwang, Chi-Sun

    2010-05-10

    Copper oxide (Cu{sub 2}O) thin films were used to produce bottom gate p-type transparent thin-film transistors (TFTs). Cu{sub 2}O was deposited by reactive rf magnetron sputtering at room temperature and the films exhibit a polycrystalline structure with a strongest orientation along (111) plane. The TFTs exhibit improved electrical performance such as a field-effect mobility of 3.9 cm{sup 2}/V s and an on/off ratio of 2x10{sup 2}.

  20. Effects on crystal structure of CZTS thin films owing to deionized water and sulfurization treatment

    SciTech Connect

    Nadi, Samia Ahmed; Chelvanathan, Puvaneswaran; Islam, M. A.; Sopian, Kamruzzaman; Yusoff, Yulisa; Amin, Nowshad

    2015-05-15

    To condense the cost and increase the production, using abundantly obtainable non-toxic elements, Cu{sub 2}ZnSnS{sub 4} (CZTS) seem to be a strong contender among the photovoltaic thin film technologies. Cu{sub 2}ZnSnS{sub 4} thin films were fabricated by RF magnetron sputtering system. CZTS were sputtered on Molybdenum (Mo) coated soda lime glass (SLG) using a single target sputtering technique. The sputtering parameters (base pressure, working pressure, Argon (Ar) flow rate, RF power and sputtering time) were kept same for all three types of films. For sulfurization, the temperature used was 500 C. Finally, As-deposited film was immersed in DIW before undergoing identical sulfurization profile. As-deposited film (Sample A), sulfurized films (Sample B) and sulfurized plus DIW treated (Sample C) were compared in terms of their structural properties by means of X-Ray Diffraction (XRD) measurement and Atomic Force Microscopy (AFM). Sample B and C showed peak of (1 1 2) planes of CZTS which are characteristics of stannite structure. Post deposition treatment on CZTS films proved to be beneficial as evident from the observed enhancement in the crystallinity and grain growth. Significant difference on grain size and area roughness could be observed from the AFM measurement. The roughness of Sample A, B and C increased from 5.007?nm to 20.509?nm and 14.183?nm accordingly. From XRD data secondary phases of Cu{sub x}MoS{sub x} could be observed.

  1. Thin film cadmium telluride, zinc telluride, and mercury zinc telluride solar cells. Final subcontract report, 1 July 1988--31 December 1991

    SciTech Connect

    Chu, T.L.

    1992-04-01

    This report describes research to demonstrate (1) thin film cadmium telluride solar cells with a quantum efficiency of 75% or higher at 0. 44 {mu}m and a photovoltaic efficiency of 11.5% or greater, and (2) thin film zinc telluride and mercury zinc telluride solar cells with a transparency to sub-band-gap radiation of 65% and a photovoltaic conversion efficiency of 5% and 8%, respectively. Work was directed at (1) depositing transparent conducting semiconductor films by solution growth and metal-organic chemical vapor deposition (MOCVD) technique, (2) depositing CdTe films by close-spaced sublimation (CSS) and MOCVD techniques, (3) preparing and evaluating thin film CdTe solar cells, and (4) preparing and characterizing thin film ZnTe, CD{sub 1-x}Zn{sub 1-x}Te, and Hg{sub 1-x}Zn{sub x}Te solar cells. The deposition of CdS films from aqueous solutions was investigated in detail, and their crystallographic, optical, and electrical properties were characterized. CdTe films were deposited from DMCd and DIPTe at 400{degrees}C using TEGa and AsH{sub 3} as dopants. CdTe films deposited by CSS had significantly better microstructures than those deposited by MOCVD. Deep energy states in CdTe films deposited by CSS and MOCVD were investigated. Thin films of ZnTe, Cd{sub 1- x}Zn{sub x}Te, and Hg{sub 1-x}Zn{sub x}Te were deposited by MOCVD, and their crystallographic, optical, and electrical properties were characterized. 67 refs.

  2. Thermoelectric properties of DC-sputtered filled skutterudite thin film

    SciTech Connect

    Fu, Gaosheng; Zuo, Lei; Chen, Jie; Lu, Ming; Yu, Liangyao

    2015-03-28

    The Yb filled CoSb{sub 3} skutterudite thermoelectric thin films were prepared by DC magnetron sputtering. The electrical conductivity, Seebeck coefficient, thermal conductivity, and figure of merit ZT of the samples are characterized in a temperature range of 300 K to 700 K. X-ray diffraction, scanning electron microscopy, and energy-dispersive X-ray spectroscopy are obtained to assess the phase composition and crystallinity of thin film samples at different heat treatment temperatures. Carrier concentrations and Hall mobilities are obtained from Hall Effect measurements, which provide further insight into the electrical conductivity and Seebeck coefficient mechanisms. The thermal conductivity of thin film filled skutterudite was found to be much less compared with bulk Yb filled CoSb{sub 3} skutterudite. In this work, the 1020 K heat treatment was adopted for thin film post process due to the high degree of crystallinity as well as avoiding reverse heating effect. Thin film samples of different thicknesses were prepared with the same sputtering deposition rate and maximum ZT of 0.48 was achieved at 700 K for the 130 nm thick sample. This value was between half and one third of the bulk figure of merit which was due to the lower Hall mobility.

  3. Uncooled thin film pyroelectric IR detector with aerogel thermal isolation

    SciTech Connect

    Ruffner, J.A.; Clem, P.G.; Tuttle, B.A. [and others

    1998-01-01

    Uncooled pyroelectric IR imaging systems, such as night vision goggles, offer important strategic advantages in battlefield scenarios and reconnaissance surveys. Until now, the current technology for fabricating these devices has been limited by low throughput and high cost which ultimately limit the availability of these sensor devices. We have developed and fabricated an alternative design for pyroelectric IR imaging sensors that utilizes a multilayered thin film deposition scheme to create a monolithic thin film imaging element on an active silicon substrate for the first time. This approach combines a thin film pyroelectric imaging element with a thermally insulating SiO{sub 2} aerogel thin film to produce a new type of uncooled IR sensor that offers significantly higher thermal, spatial, and temporal resolutions at a substantially lower cost per unit. This report describes the deposition, characterization and optimization of the aerogel thermal isolation layer and an appropriate pyroelectric imaging element. It also describes the overall integration of these components along with the appropriate planarization, etch stop, adhesion, electrode, and blacking agent thin film layers into a monolithic structure. 19 refs., 8 figs., 6 tabs.

  4. Domain epitaxy for thin film growth

    DOEpatents

    Narayan, Jagdish

    2005-10-18

    A method of forming an epitaxial film on a substrate includes growing an initial layer of a film on a substrate at a temperature T.sub.growth, said initial layer having a thickness h and annealing the initial layer of the film at a temperature T.sub.anneal, thereby relaxing the initial layer, wherein said thickness h of the initial layer of the film is greater than a critical thickness h.sub.c. The method further includes growing additional layers of the epitaxial film on the initial layer subsequent to annealing. In some embodiments, the method further includes growing a layer of the film that includes at least one amorphous island.

  5. Photovoltaics

    SciTech Connect

    Ebisch, R.

    1981-07-01

    Applications of photovoltaics to non-residential buildings are discussed. Most of the projects underway represent a joint effort by DOE and fifteen manufacturing companies now offering or developing photovoltaics. The systems are either flat-plate arrays, in which the sunlight is received directly on the photocells, or concentrating systems, in which the sunlight is focused on the photocells by mirrors or lenses. The DOE price goal for 1986 is to have photovoltaic systems capable of supplying shopping centers, apartment complexes, and industries with modules costing 70 cents/W and systems costing $1.60 to $2.60/W with the price of power to the user at 7 cents to 11 cents/kWh. New technologies discussed include the use of silicon with no crystal structure and the use of ribbons of silicon. (MJF)

  6. Ferroelastic switching in a layered-perovskite thin film

    DOE PAGES [OSTI]

    Wang, Chuanshou; Ke, Xiaoxing; Wang, Jianjun; Liang, Renrong; Luo, Zhenlin; Tian, Yu; Yi, Di; Zhang, Qintong; Wang, Jing; Han, Xiu -Feng; et al

    2016-02-03

    Here, a controllable ferroelastic switching in ferroelectric/multiferroic oxides is highly desirable due to the non-volatile strain and possible coupling between lattice and other order parameter in heterostructures. However, a substrate clamping usually inhibits their elastic deformation in thin films without micro/nano-patterned structure so that the integration of the non-volatile strain with thin film devices is challenging. Here, we report that reversible in-plane elastic switching with a non-volatile strain of approximately 0.4% can be achieved in layeredperovskite Bi2WO6 thin films, where the ferroelectric polarization rotates by 90 within four in-plane preferred orientations. Phase-field simulation indicates that the energy barrier of ferroelasticmore » switching in orthorhombic Bi2WO6 film is ten times lower than the one in PbTiO3 films, revealing the origin of the switching with negligible substrate constraint. The reversible control of the in-plane strain in this layered-perovskite thin film demonstrates a new pathway to integrate mechanical deformation with nanoscale electronic and/or magnetoelectronic applications.« less

  7. Optical and structural properties of sputtered CdS films for thin film solar cell applications

    SciTech Connect

    Kim, Donguk; Park, Young; Kim, Minha; Choi, Youngkwan; Park, Yong Seob; Lee, Jaehyoeng

    2015-09-15

    Graphical abstract: Photo current–voltage curves (a) and the quantum efficiency (QE) (b) for the solar cell with CdS film grown at 300 °C. - Highlights: • CdS thin films were grown by a RF magnetron sputtering method. • Influence of growth temperature on the properties of CdS films was investigated. • At higher T{sub g}, the crystallinity of the films improved and the grains enlarged. • CdS/CdTe solar cells with efficiencies of 9.41% were prepared at 300 °C. - Abstract: CdS thin films were prepared by radio frequency magnetron sputtering at various temperatures. The effects of growth temperature on crystallinity, surface morphology and optical properties of the films were characterized with X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), Raman spectra, UV–visible spectrophotometry, and photoluminescence (PL) spectra. As the growth temperature was increased, the crystallinity of the sputtered CdS films was improved and the grains were enlarged. The characteristics of CdS/CdTe thin film solar cell appeared to be significantly influenced by the growth temperature of the CdS films. Thin film CdS/CdTe solar cells with efficiencies of 9.41% were prepared at a growth temperature of 300 °C.

  8. Real time intelligent process control system for thin film solar cell manufacturing

    SciTech Connect

    George Atanasoff

    2010-10-29

    significant equipment refurbishing needed for installation of multiple separate ellipsometric systems, and development of customized software to control all of them simultaneously. The proposed optical monitoring system comprises AccuStratas fiber optics sensors installed inside the thin film deposition equipment, a hardware module of different components (beyond the scope of this project) and our software program with iterative predicting capability able to control material bandgap and surface roughness as films are deposited. Our miniature fiber optics monitoring sensors are installed inside the vacuum chamber compartments in very close proximity where the independent layers are deposited (an option patented by us in 2003). The optical monitoring system measures two of the most important parameters of the photovoltaic thin films during deposition on a moving solar panel - material bandgap and surface roughness. In this program each sensor array consists of two fiber optics sensors monitoring two independent areas of the panel under deposition. Based on the monitored parameters and their change in time and from position to position on the panel, the system is able to provide to the equipment operator immediate information about the thin films as they are deposited. This DoE Supply Chain program is considered the first step towards the development of intelligent optical control system capable of dynamically adjusting the manufacturing process on-the-fly in order to achieve better performance. The proposed system will improve the thin film solar cell manufacturing by improving the quality of the individual solar cells and will allow for the manufacturing of more consistent and uniform products resulting in higher solar conversion efficiency and manufacturing yield. It will have a significant impact on the multibillion-dollar thin film solar market. We estimate that the financial impact of these improvements if adopted by only 10% of the industry ($7.7 Billion) would result

  9. Thin film cadmium telluride and zinc phosphide solar cells

    SciTech Connect

    Chu, T.

    1984-10-01

    This report describes research performed from June 1982 to October 1983 on the deposition of cadmium telluride films by direct combination of the cadmium and tellurium vapor on foreign substrates. Nearly stoichiometric p-type cadmium telluride films and arsenic-doped p-type films have been prepared reproducibly. Major efforts were directed to the deposition and characterization of heterojunction window materials, indium tin oxide, fluorine-doped tin oxide, cadmium oxide, and zinc oxide. A number of heterojunction solar cells were prepared, and the best thin-film ITO/CdTe solar cells had an AMl efficiency of about 7.2%. Zinc phosphide films were deposited on W/steel substrates by the reaction of zinc and phosphine in a hydrogen flow. Films without intentional doping had an electrical resistivity on the order of 10/sup 6/ ohm-cm, and this resistivity may be reduced to about 5 x 10/sup 4/ ohm-cm by adding hydrogen chloride or hydrogen bromide to the reaction mixture. Lower resistivity films were deposited by adding a controlled amount of silver nitrate solution on to the substrate surface. Major efforts were directed to the deposition of low-resistivity zinc selenide in order to prepare ZnSe/An/sub 3/P/sub 2/ heterojunction thin-film solar cells. However, zinc selenide films deposited by vacuum evaporation and chemical vapor deposition techniques were all of high resistivity.

  10. Solid State Photovoltaic Research Branch

    SciTech Connect

    Not Available

    1990-09-01

    This report summarizes the progress of the Solid State Photovoltaic Research Branch of the Solar Energy Research Institute (SERI) from October 1, 1988, through September 30,l 1989. Six technical sections of the report cover these main areas of SERIs in-house research: Semiconductor Crystal Growth, Amorphous Silicon Research, Polycrystalline Thin Films, III-V High-Efficiency Photovoltaic Cells, Solid-State Theory, and Laser Raman and Luminescence Spectroscopy. Sections have been indexed separately for inclusion on the data base.

  11. Preparation of a semiconductor thin film

    DOEpatents

    Pehnt, Martin; Schulz, Douglas L.; Curtis, Calvin J.; Ginley, David S.

    1998-01-01

    A process for the preparation of a semiconductor film. The process comprises depositing nanoparticles of a semiconductor material onto a substrate whose surface temperature during nanoparticle deposition thereon is sufficient to cause substantially simultaneous fusion of the nanoparticles to thereby coalesce with each other and effectuate film growth.

  12. Preparation of a semiconductor thin film

    DOEpatents

    Pehnt, M.; Schulz, D.L.; Curtis, C.J.; Ginley, D.S.

    1998-01-27

    A process is disclosed for the preparation of a semiconductor film. The process comprises depositing nanoparticles of a semiconductor material onto a substrate whose surface temperature during nanoparticle deposition thereon is sufficient to cause substantially simultaneous fusion of the nanoparticles to thereby coalesce with each other and effectuate film growth.

  13. Unidirectional oxide hetero-interface thin-film diode

    SciTech Connect

    Park, Youngmin; Lee, Eungkyu; Lee, Jinwon; Lim, Keon-Hee; Kim, Youn Sang

    2015-10-05

    The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ∼10{sup 5} at 5 V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 10{sup 2} Hz < f < 10{sup 6} Hz, providing a high feasibility for practical applications.

  14. Properties of zirconia thin films deposited by laser ablation

    SciTech Connect

    Cancea, V. N.; Filipescu, M.; Colceag, D.; Dinescu, M.; Mustaciosu, C.

    2013-11-13

    Zirconia thin films have been deposited by laser ablation of a ceramic ZrO{sub 2} target in vacuum or in oxygen background at 0.01 mbar. The laser beam generated by an ArF laser (λ=193 nm, ν=40 Hz) has been focalized on the target through a spherical lens at an incident angle of 45°. The laser fluence has been established to a value from 2.0 to 3.4 Jcm{sup −2}. A silicon (100) substrate has been placed parallel to the target, at a distance of 4 cm, and subsequently has been heated to temperatures ranging between 300 °C and 600 °C. Thin films morphology has been characterized by atomic force microscopy and secondary ion mass spectrometry. Biocompatibility of these thin films has been assessed by studying the cell attachment of L929 mouse fibroblasts.

  15. Low Temperature Chemical Vapor Deposition Of Thin Film Magnets

    DOEpatents

    Miller, Joel S.; Pokhodnya, Kostyantyn I.

    2003-12-09

    A thin-film magnet formed from a gas-phase reaction of tetracyanoetheylene (TCNE) OR (TCNQ), 7,7,8,8-tetracyano-P-quinodimethane, and a vanadium-containing compound such as vanadium hexcarbonyl (V(CO).sub.6) and bis(benzene)vanalium (V(C.sub.6 H.sub.6).sub.2) and a process of forming a magnetic thin film upon at least one substrate by chemical vapor deposition (CVD) at a process temperature not exceeding approximately 90.degree. C. and in the absence of a solvent. The magnetic thin film is particularly suitable for being disposed upon rigid or flexible substrates at temperatures in the range of 40.degree. C. and 70.degree. C. The present invention exhibits air-stable characteristics and qualities and is particularly suitable for providing being disposed upon a wide variety of substrates.

  16. Thin palladium films on silicon and titanium

    SciTech Connect

    Harris, L.A.

    1982-12-01

    Films of Pd from 20 to 160A thick were deposited on sputter-etched Si and on Ti films of Si and then tested electrochemically in 0.5M H/sub 2/SO/sub 4/. The behavior characteristic of Pd metal was lost with prolonged storage or with extended electrochemical cycling. The thinner films produced oxidation and reduction peaks in the voltammograms similar to the hydrogen peaks observed with Pt. Hydrogen sorption measured from voltammograms at different sweep rates and by pulse measurements indicates a definite diffusion component that begins to limit hydrogen sorption for P films thicker than about 80A. Shifts of the oxygen reduction peak indicate an increase in oxygen bonding strength as the films are made thinner.

  17. Methods for forming thin-film heterojunction solar cells from I-III-VI{sub 2}

    DOEpatents

    Mickelsen, R.A.; Chen, W.S.

    1985-08-13

    An improved thin-film, large area solar cell, and methods for forming the same are disclosed, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI{sub 2} chalcopyrite ternary materials which is vacuum deposited in a thin ``composition-graded`` layer ranging from on the order of about 2.5 microns to about 5.0 microns ({approx_equal}2.5 {mu}m to {approx_equal}5.0 {mu}m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii) a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion occurs (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer. 16 figs.

  18. Methods for forming thin-film heterojunction solar cells from I-III-VI[sub 2

    DOEpatents

    Mickelsen, R.A.; Chen, W.S.

    1982-06-15

    An improved thin-film, large area solar cell, and methods for forming the same are disclosed, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (1) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI[sub 2] chalcopyrite ternary materials which is vacuum deposited in a thin composition-graded'' layer ranging from on the order of about 2.5 microns to about 5.0 microns ([approx equal]2.5[mu]m to [approx equal]5.0[mu]m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (2), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, is allowed.

  19. Methods for forming thin-film heterojunction solar cells from I-III-VI.sub. 2

    DOEpatents

    Mickelsen, Reid A.; Chen, Wen S.

    1985-08-13

    An improved thin-film, large area solar cell, and methods for forming the same, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI.sub.2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order ot about 2.5 microns to about 5.0 microns (.congruent.2.5 .mu.m to .congruent.5.0 .mu.m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the The Government has rights in this invention pursuant to Contract No. EG-77-C-01-4042, Subcontract No. XJ-9-8021-1 awarded by the U.S. Department of Energy.

  20. Methods for forming thin-film heterojunction solar cells from I-III-VI.sub. 2

    DOEpatents

    Mickelsen, Reid A.; Chen, Wen S.

    1982-01-01

    An improved thin-film, large area solar cell, and methods for forming the same, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI.sub.2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order of about 2.5 microns to about 5.0 microns (.congruent.2.5.mu.m to .congruent.5.0.mu.m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the transient n-type material in The Government has rights in this invention pursuant to Contract No. EG-77-C-01-4042, Subcontract No. XJ-9-8021-1 awarded by the U.S. Department of Energy.

  1. Fabrication of polycrystalline thin films by pulsed laser processing

    DOEpatents

    Mitlitsky, Fred (Livermore, CA); Truher, Joel B. (San Rafael, CA); Kaschmitter, James L. (Pleasanton, CA); Colella, Nicholas J. (Livermore, CA)

    1998-02-03

    A method for fabricating polycrystalline thin films on low-temperature (or high-temperature) substrates which uses processing temperatures that are low enough to avoid damage to the substrate, and then transiently heating select layers of the thin films with at least one pulse of a laser or other homogenized beam source. The pulse length is selected so that the layers of interest are transiently heated to a temperature which allows recrystallization and/or dopant activation while maintaining the substrate at a temperature which is sufficiently low to avoid damage to the substrate. This method is particularly applicable in the fabrication of solar cells.

  2. Monitoring the Stability of Organometallic Perovskite Thin Films (Journal

    Office of Scientific and Technical Information (OSTI)

    Article) | SciTech Connect Journal Article: Monitoring the Stability of Organometallic Perovskite Thin Films Citation Details In-Document Search Title: Monitoring the Stability of Organometallic Perovskite Thin Films Authors: Ndione, Paul F. ; Yin, Wan-Jian ; Zhu, Kai ; Wei, Suhuai ; Berry, Joseph J. Publication Date: 2015-11-21 OSTI Identifier: 1227711 Report Number(s): NREL/JA-5K00-64683 Journal ID: ISSN 2050-7488 DOE Contract Number: AC36-08GO28308 Resource Type: Journal Article Resource

  3. Fabrication of polycrystalline thin films by pulsed laser processing

    DOEpatents

    Mitlitsky, F.; Truher, J.B.; Kaschmitter, J.L.; Colella, N.J.

    1998-02-03

    A method is disclosed for fabricating polycrystalline thin films on low-temperature (or high-temperature) substrates which uses processing temperatures that are low enough to avoid damage to the substrate, and then transiently heating select layers of the thin films with at least one pulse of a laser or other homogenized beam source. The pulse length is selected so that the layers of interest are transiently heated to a temperature which allows recrystallization and/or dopant activation while maintaining the substrate at a temperature which is sufficiently low to avoid damage to the substrate. This method is particularly applicable in the fabrication of solar cells. 1 fig.

  4. Perovskite phase thin films and method of making

    DOEpatents

    Boyle, Timothy J.; Rodriguez, Mark A.

    2000-01-01

    The present invention comprises perovskite-phase thin films, of the general formula A.sub.x B.sub.y O.sub.3 on a substrate, wherein A is selected from beryllium, magnesium, calcium, strontium, and barium or a combination thereof; B is selected from niobium and tantalum or a combination thereof; and x and y are mole fractions between approximately 0.8 and 1.2. More particularly, A is strontium or barium or a combination thereof and B is niobium or tantalum or a combination thereof. Also provided is a method of making a perovskite-phase thin film, comprising combining at least one element-A-containing compound, wherein A is selected from beryllium, magnesium, calcium, strontium or barium, with at least one element-B-containing compound, wherein B niobium or tantalum, to form a solution; adding a solvent to said solution to form another solution; spin-coating the solution onto a substrate to form a thin film; and heating the film to form the perovskite-phase thin film.

  5. Stress Evolution in Sn Thin Films During Thermal Cycling

    SciTech Connect

    Stevens, K. J.; Cheong, K. C.; Cai Zhonghou; Ingham, B.; Toney, M. F.

    2009-07-23

    Finite Element Modelling and corresponding X-ray and Electron Back-Scatter Diffraction measurements have been used to investigate the development of strain in thin tin films during thermal cycling. The modeled average strain in the film was found to agree within 20% to the experimental result, although the strain within individual grains was found to vary dramatically as observed by electron backscatter diffraction and synchrotron microdiffraction.

  6. Substrates suitable for deposition of superconducting thin films

    DOEpatents

    Feenstra, Roeland; Boatner, Lynn A.

    1993-01-01

    A superconducting system for the lossless transmission of electrical current comprising a thin film of superconducting material Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x epitaxially deposited upon a KTaO.sub.3 substrate. The KTaO.sub.3 is an improved substrate over those of the prior art since the it exhibits small lattice constant mismatch and does not chemically react with the superconducting film.

  7. Method for producing high quality thin layer films on substrates

    DOEpatents

    Strongin, Myron; Ruckman, Mark; Strongin, Daniel

    1994-01-01

    A method for producing high quality, thin layer films of inorganic compounds upon the surface of a substrate is disclosed. The method involves condensing a mixture of preselected molecular precursors on the surface of a substrate and subsequently inducing the formation of reactive species using high energy photon or charged particle irradiation. The reactive species react with one another to produce a film of the desired compound upon the surface of the substrate.

  8. Method for producing high quality thin layer films on substrates

    DOEpatents

    Strongin, M.; Ruckman, M.; Strongin, D.

    1994-04-26

    A method for producing high quality, thin layer films of inorganic compounds upon the surface of a substrate is disclosed. The method involves condensing a mixture of preselected molecular precursors on the surface of a substrate and subsequently inducing the formation of reactive species using high energy photon or charged particle irradiation. The reactive species react with one another to produce a film of the desired compound upon the surface of the substrate. 4 figures.

  9. Ultrashort pulse laser deposition of thin films

    DOEpatents

    Perry, Michael D.; Banks, Paul S.; Stuart, Brent C.

    2002-01-01

    Short pulse PLD is a viable technique of producing high quality films with properties very close to that of crystalline diamond. The plasma generated using femtosecond lasers is composed of single atom ions with no clusters producing films with high Sp.sup.3 /Sp.sup.2 ratios. Using a high average power femtosecond laser system, the present invention dramatically increases deposition rates to up to 25 .mu.m/hr (which exceeds many CVD processes) while growing particulate-free films. In the present invention, deposition rates is a function of laser wavelength, laser fluence, laser spot size, and target/substrate separation. The relevant laser parameters are shown to ensure particulate-free growth, and characterizations of the films grown are made using several diagnostic techniques including electron energy loss spectroscopy (EELS) and Raman spectroscopy.

  10. Reconfigurable p-n junction diodes and the photovoltaic effect in exfoliated MoS{sub 2} films

    SciTech Connect

    Sutar, Surajit; Agnihotri, Pratik; Comfort, Everett; Ung Lee, Ji; Taniguchi, T.; Watanabe, K.

    2014-03-24

    Realizing basic semiconductor devices such as p-n junctions are necessary for developing thin-film and optoelectronic technologies in emerging planar materials such as MoS{sub 2}. In this work, electrostatic doping by buried gates is used to study the electronic and optoelectronic properties of p-n junctions in exfoliated MoS{sub 2} flakes. Creating a controllable doping gradient across the device leads to the observation of the photovoltaic effect in monolayer and bilayer MoS{sub 2} flakes. For thicker flakes, strong ambipolar conduction enables realization of fully reconfigurable p-n junction diodes with rectifying current-voltage characteristics, and diode ideality factors as low as 1.6. The spectral response of the photovoltaic effect shows signatures of the predicted band gap transitions. For the first excitonic transition, a shift of >4{sub kB}T is observed between monolayer and bulk devices, indicating a thickness-dependence of the excitonic coulomb interaction.

  11. Nanoscale Spin-State Ordering in LaCoO3 Epitaxial Thin Films...

    Office of Scientific and Technical Information (OSTI)

    Nanoscale Spin-State Ordering in LaCoO3 Epitaxial Thin Films Citation Details In-Document Search Title: Nanoscale Spin-State Ordering in LaCoO3 Epitaxial Thin Films Authors: Kwon, ...

  12. Solid-solution CrCoCuFeNi high-entropy alloy thin films synthesized...

    Office of Scientific and Technical Information (OSTI)

    Solid-solution CrCoCuFeNi high-entropy alloy thin films synthesized by sputter deposition Title: Solid-solution CrCoCuFeNi high-entropy alloy thin films synthesized by sputter ...

  13. Iron Pyrite Thin Films Synthesized from an Fe(acac)[subscript...

    Office of Scientific and Technical Information (OSTI)

    Iron Pyrite Thin Films Synthesized from an Fe(acac)subscript 3 Ink Citation Details In-Document Search Title: Iron Pyrite Thin Films Synthesized from an Fe(acac)subscript 3 Ink...

  14. High-Efficiency GaAs Thin-Film Solar Cell Reliability | Department...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    GaAs Thin-Film Solar Cell Reliability High-Efficiency GaAs Thin-Film Solar Cell Reliability Presented at the PV Module Reliability Workshop, February 26 - 27 2013, Golden, Colorado ...

  15. CIGS Thin-Film Solar Cell Research at NREL: FY04 Results and...

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    CIGS Thin-Film Solar Cell Research at NREL: FY04 Results and Accomplishments Citation Details In-Document Search Title: CIGS Thin-Film Solar Cell Research at NREL: FY04 Results and ...

  16. Buffer layer for thin film structures (Patent) | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    Buffer layer for thin film structures Citation Details In-Document Search Title: Buffer layer for thin film structures A composite structure including a base substrate and a layer...

  17. Generation of low work function, stable compound thin films by laser ablation

    DOEpatents

    Dinh, Long N.; McLean, II, William; Balooch, Mehdi; Fehring, Jr., Edward J.; Schildbach, Marcus A.

    2001-01-01

    Generation of low work function, stable compound thin films by laser ablation. Compound thin films with low work function can be synthesized by simultaneously laser ablating silicon, for example, and thermal evaporating an alkali metal into an oxygen environment. For example, the compound thin film may be composed of Si/Cs/O. The work functions of the thin films can be varied by changing the silicon/alkali metal/oxygen ratio. Low work functions of the compound thin films deposited on silicon substrates were confirmed by ultraviolet photoelectron spectroscopy (UPS). The compound thin films are stable up to 500.degree. C. as measured by x-ray photoelectron spectroscopy (XPS). Tests have established that for certain chemical compositions and annealing temperatures of the compound thin films, negative electron affinity (NEA) was detected. The low work function, stable compound thin films can be utilized in solar cells, field emission flat panel displays, electron guns, and cold cathode electron guns.

  18. A Sensitivity Analysis of a Thin Film Conductivity Estimation Method

    SciTech Connect

    McMasters, Robert L; Dinwiddie, Ralph Barton

    2010-01-01

    An analysis method was developed for determining the thermal conductivity of a thin film on a substrate of known thermal properties using the flash diffusivity method. In order to determine the thermal conductivity of the film using this method, the volumetric heat capacity of the film must be known, as determined in a separate experiment. Additionally, the thermal properties of the substrate must be known, including conductivity and volumetric heat capacity. The ideal conditions for the experiment are a low conductivity film adhered to a higher conductivity substrate. As the film becomes thinner with respect to the substrate or, as the conductivity of the film approaches that of the substrate, the estimation of thermal conductivity of the film becomes more difficult. The present research examines the effect of inaccuracies in the known parameters on the estimation of the parameter of interest, the thermal conductivity of the film. As such, perturbations are introduced into the other parameters in the experiment, which are assumed to be known, to find the effect on the estimated thermal conductivity of the film. A baseline case is established with the following parameters: Substrate thermal conductivity 1.0 W/m-K Substrate volumetric heat capacity 106 J/m3-K Substrate thickness 0.8 mm Film thickness 0.2 mm Film volumetric heat capacity 106 J/m3-K Film thermal conductivity 0.01 W/m-K Convection coefficient 20 W/m2-K Magnitude of heat absorbed during the flash 1000 J/m2 Each of these parameters, with the exception of film thermal conductivity, the parameter of interest, is varied from its baseline value, in succession, and placed into a synthetic experimental data file. Each of these data files is individually analyzed by the program to determine the effect on the estimated film conductivity, thus quantifying the vulnerability of the method to measurement errors.

  19. Oriented niobate ferroelectric thin films for electrical and optical devices

    DOEpatents

    Wessels, Bruce W.; Nystrom, Michael J.

    2001-01-01

    Sr.sub.x Ba.sub.1-x Nb.sub.2 O.sub.6, where x is greater than 0.25 and less than 0.75, and KNbO.sub.3 ferroelectric thin films metalorganic chemical vapor deposited on amorphous or cyrstalline substrate surfaces to provide a crystal axis of the film exhibiting a high dielectric susceptibility, electro-optic coefficient, and/or nonlinear optic coefficient oriented preferentially in a direction relative to a crystalline or amorphous substrate surface. Such films can be used in electronic, electro-optic, and frequency doubling components.

  20. High-temperature superconducting thin-film-based electronic devices

    SciTech Connect

    Wu, X.D; Finokoglu, A.; Hawley, M.; Jia, Q.; Mitchell, T.; Mueller, F.; Reagor, D.; Tesmer, J.

    1996-09-01

    This the final report of a one-year, Laboratory-Directed Research and Development (LDRD) project at the Los Alamos National Laboratory (LANL). The project involved optimization of processing of Y123 and Tl-2212 thin films deposited on novel substrates for advanced electronic devices. The Y123 films are the basis for development of Josephson Junctions to be utilized in magnetic sensors. Microwave cavities based on the Tl-2212 films are the basis for subsequent applications as communication antennas and transmitters in satellites.

  1. Method for fabricating thin films of pyrolytic carbon

    DOEpatents

    Brassell, Gilbert W.; Lewis, Jr., John; Weber, Gary W.

    1982-01-01

    The present invention relates to a method for fabricating ultra-thin films of pyrolytic carbon. Pyrolytic carbon is vapor deposited onto a concave surface of a heated substrate to a total uniform thickness in the range of about 0.1 to 1.0 micrometer. The carbon film on the substrate is provided with a layer of adherent polymeric resin. The resulting composite film of pyrolytic carbon and polymeric resin is then easily separated from the substrate by shrinking the polymeric resin coating with thermally induced forces.

  2. Junction Evolution During Fabrication of CdS/CdTe Thin-film PV Solar Cells (Presentation)

    SciTech Connect

    Gessert, T. A.

    2010-09-01

    Discussion of the formation of CdTe thin-film PV junctions and optimization of CdTe thin-film PV solar cells.

  3. Thin Metal Oxide Films to Modify a Window Layer in CdTe-Based Solar Cells for Improved Performance

    SciTech Connect

    Lemmon, John P.; Polikarpov, Evgueni; Bennett, Wendy D.; Kovarik, Libor

    2012-05-25

    We report on CdS/CdTe photovoltaic devices that contain a thin Ta₂O₅ film deposited onto the CdS window layer by sputtering. We show that for thicknesses below 5 nm, Ta₂O₅ films between CdS and CdTe positively affect the solar cell performance, improving JSC, VOC, and the cell power conversion efficiency despite the insulating nature of the interlayer material. Using the Ta₂O₅ interlayer, a VOC gain of over 100 mV was demonstrated compared to a CdTe/CdS baseline. Application of a 1nm Ta₂O₅ interlayer enabled the fabrication of CdTe solar cells with extremely thin (less than 30 nm) CdS window layers. The efficiency of these cells exceeded that of a base line cell with 95 nm of CdS.

  4. Thiogallate Blue Phosphors for Thin Film Electroluminescent Flat Panel Displays

    SciTech Connect

    Dye, Robert C.; Tuenge, Richard T.

    1997-04-03

    This project helped to develop a metal-organic chemical vapor deposition (MOCVD) method that could improve the efficiency of the blue phosphor for full color thin-film electroluminescent (TFEL) flat panel displays. High quality SrS and SrS:Ce thin films were deposited from Sr(thd)2, Ce(thd)4 and H2S via a low pressure MOCVD process. Film characteristics were found to be insensitive to the presence of the cerium dopant in the concn. range investigated. Depositions were carried out for a wide temp. range (250-550°C). Deposition rates were found to be relatively insensitive for the temp. range investigated. The films produced were found to be highly cryst. at all temps. investigated. Deposited material showed texturing as a function of substrate material and temp. FWHM of the a 111 ii reflections were found to have a 2Q values of 0.15-0.18 deg. for all temps. RBS and AES shows stoichiometric 1 : 1 SrS with less than 2% carbon and oxygen contaminates. ERO indicates the films to have 1- 2.5% hydrogen. Films doped with 0.019-0.043 atom % Ce showed weak blue-green to green PL with increasing dopant concn. Doped films yielded up to 3.2 cd/m2 EL emission with CIE coordinates of x = 0.22 and y = 0.32 and turn-on voltages of 150-250 V.

  5. Equiatomic CoPt thin films with extremely high coercivity

    SciTech Connect

    Varghese, Binni; Piramanayagam, S. N. Yang, Yi; Kai Wong, Seng; Khume Tan, Hang; Kiat Lee, Wee; Okamoto, Iwao

    2014-05-07

    In this paper, magnetic and structural properties of near-equiatomic CoPt thin films, which exhibited a high coercivity in the film-normal directionsuitable for perpendicular magnetic recording media applicationsare reported. The films exhibited a larger coercivity of about 6.5 kOe at 8?nm. The coercivity showed a monotonous decrease as the film thickness was increased. The transmission electron microscopy images indicated that the as fabricated CoPt film generally consists of a stack of magnetically hard hexagonal-close-packed phase, followed by stacking faults and face-centred-cubic phase. The thickness dependent magnetic properties are explained on the basis of exchange-coupled composite media. Epitaxial growth on Ru layers is a possible factor leading to the unusual observation of magnetically hard hcp-phase at high concentrations of Pt.

  6. Atomic layer deposition of superparamagnetic and ferrimagnetic magnetite thin films

    SciTech Connect

    Zhang, Yijun; Liu, Ming E-mail: wren@mail.xjtu.edu.cn Ren, Wei E-mail: wren@mail.xjtu.edu.cn; Zhang, Yuepeng; Chen, Xing; Ye, Zuo-Guang E-mail: wren@mail.xjtu.edu.cn

    2015-05-07

    One of the key challenges in realizing superparamagnetism in magnetic thin films lies in finding a low-energy growth way to create sufficiently small grains and magnetic domains which allow the magnetization to randomly and rapidly reverse. In this work, well-defined superparamagnetic and ferrimagnetic Fe{sub 3}O{sub 4} thin films are successfully prepared using atomic layer deposition technique by finely controlling the growth condition and post-annealing process. As-grown Fe{sub 3}O{sub 4} thin films exhibit a conformal surface and poly-crystalline nature with an average grain size of 7 nm, resulting in a superparamagnetic behavior with a blocking temperature of 210 K. After post-annealing in H{sub 2}/Ar at 400 °C, the as-grown α−Fe{sub 2}O{sub 3} sample is reduced to Fe{sub 3}O{sub 4} phase, exhibiting a ferrimagnetic ordering and distinct magnetic shape anisotropy. Atomic layer deposition of magnetite thin films with well-controlled morphology and magnetic properties provides great opportunities for integrating with other order parameters to realize magnetic nano-devices with potential applications in spintronics, electronics, and bio-applications.

  7. Method of preparing thin film polymeric gel electrolytes

    DOEpatents

    Derzon, Dora K.; Arnold, Jr., Charles

    1997-01-01

    Novel hybrid thin film electrolyte, based on an organonitrile solvent system, which are compositionally stable, environmentally safe, can be produced efficiently in large quantity and which, because of their high conductivities .apprxeq.10.sup.-3 .OMEGA..sup.-1 cm.sup.-1 are useful as electrolytes for rechargeable lithium batteries.

  8. Method of preparing thin film polymeric gel electrolytes

    DOEpatents

    Derzon, D.K.; Arnold, C. Jr.

    1997-11-25

    Novel hybrid thin film electrolyte is described, based on an organonitrile solvent system, which are compositionally stable, environmentally safe, can be produced efficiently in large quantity and which, because of their high conductivities {approx_equal}10{sup {minus}3}{Omega}{sup {minus}1}cm{sup {minus}1} are useful as electrolytes for rechargeable lithium batteries. 1 fig.

  9. Method for double-sided processing of thin film transistors

    DOEpatents

    Yuan, Hao-Chih; Wang, Guogong; Eriksson, Mark A.; Evans, Paul G.; Lagally, Max G.; Ma, Zhenqiang

    2008-04-08

    This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

  10. Front and backside processed thin film electronic devices

    DOEpatents

    Yuan, Hao-Chih; Wang, Guogong; Eriksson, Mark A.; Evans, Paul G.; Lagally, Max G.; Ma, Zhenqiang

    2010-10-12

    This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

  11. CIS-based thin film PV technology. Phase 1 annual technical report, September 1995--September 1996

    SciTech Connect

    Tarrant, D.E.; Gay, R.R.

    1997-04-01

    The primary objective of this subcontract is to establish reliable high-throughput, high-yield thin film deposition processes in order to make CIS a viable option for the next generation of photovoltaics. The primary goals for the project are to deliver a champion prototype 13% efficient large area module and to deliver sets of modules in 1-kW arrays composed of steadily increasing efficiency, reaching 1 kW of 12% efficient large-area modules by the end of the third year, demonstrating performance as well as commercial viability. The focus of the deliverables on large sets of high-performance modules reflects Siemens Solar Industries` commitment to demonstrating a reliable low-cost product. This document reports on progress from September 1995 through September 1996.

  12. Process for fabricating polycrystalline semiconductor thin-film solar cells, and cells produced thereby

    DOEpatents

    Wu, Xuanzhi; Sheldon, Peter

    2000-01-01

    A novel, simplified method for fabricating a thin-film semiconductor heterojunction photovoltaic device includes initial steps of depositing a layer of cadmium stannate and a layer of zinc stannate on a transparent substrate, both by radio frequency sputtering at ambient temperature, followed by the depositing of dissimilar layers of semiconductors such as cadmium sulfide and cadmium telluride, and heat treatment to convert the cadmium stannate to a substantially single-phase material of a spinel crystal structure. Preferably, the cadmium sulfide layer is also deposited by radio frequency sputtering at ambient temperature, and the cadmium telluride layer is deposited by close space sublimation at an elevated temperature effective to convert the amorphous cadmium stannate to the polycrystalline cadmium stannate with single-phase spinel structure.

  13. Broadening of optical transitions in polycrystalline CdS and CdTe thin films

    SciTech Connect

    Li Jian; Chen Jie; Collins, R. W.

    2010-11-01

    The dielectric functions {epsilon} of polycrystalline CdS and CdTe thin films sputter deposited onto Si wafers were measured from 0.75 to 6.5 eV by in situ spectroscopic ellipsometry. Differences in {epsilon} due to processing variations are well understood using an excited carrier scattering model. For each sample, a carrier mean free path {lambda} is defined that is found to be inversely proportional to the broadening of each of the band structure critical points (CPs) deduced from {epsilon}. The rate at which broadening occurs with {lambda}{sup -1} is different for each CP, enabling a carrier group speed {upsilon}{sub g} to be identified for the CP. With the database for {upsilon}{sub g}, {epsilon} can be analyzed to evaluate the quality of materials used in CdS/CdTe photovoltaic heterojunctions.

  14. Temperature-Dependent Light-Stabilized States in Thin-Film PV Modules

    SciTech Connect

    Deceglie, Michael G.; Silverman, Timothy J.; Marion, Bill; Kurtz, Sarah R.

    2015-06-14

    Thin-film photovoltaic modules are known to exhibit light-induced transient behavior which interferes with accurate and repeatable measurements of power. Typically power measurements are made after a light exposure in order to target a 'light state' of the module that is representative of outdoor performance. Here we show that the concept of a unique light state is poorly defined for both CIGS and CdTe modules. Instead we find that their metastable state after a light exposure can depend on the temperature of the module during the exposure. We observe changes in power as large as 5.8% for a 20 degrees C difference in light exposure temperature. These results lead us to conclude that for applications in which reproducibility and repeatability are critical, module temperature should be tightly controlled during light exposure.

  15. Temperature-Dependent Light-Stabilized States in Thin-Film PV Modules: Preprint

    SciTech Connect

    Deceglie, Michael G.; Silverman, Timothy J.; Marion, Bill; Kurtz, Sarah R.

    2015-09-17

    Thin-film photovoltaic modules are known to exhibit light-induced transient behavior which interferes with accurate and repeatable measurements of power. Typically power measurements are made after a light exposure in order to target a 'light state' of the module that is representative of outdoor performance. Here we show that the concept of a unique light state is poorly defined for both CIGS and CdTe modules. Instead we find that their metastable state after a light exposure can depend on the temperature of the module during the exposure. We observe changes in power as large as 5.8% for a 20 degrees C difference in light exposure temperature. These results lead us to conclude that for applications in which reproducibility and repeatability are critical, module temperature should be tightly controlled during light exposure.

  16. Microwave plasma assisted supersonic gas jet deposition of thin film materials

    DOEpatents

    Schmitt, III, Jerome J.; Halpern, Bret L.

    1993-01-01

    An apparatus for fabricating thin film materials utilizing high speed gas dynamics relies on supersonic free jets of carrier gas to transport depositing vapor species generated in a microwave discharge to the surface of a prepared substrate where the vapor deposits to form a thin film. The present invention generates high rates of deposition and thin films of unforeseen high quality at low temperatures.

  17. Plasmonic Backscattering Enhanced Inverted Photovoltaics

    SciTech Connect

    Dissanayake, D. M. N. M.; Roberts, B.; Ku, P.C.

    2011-01-01

    A plasmonic nanoparticle incorporated inverted organic photovoltaic structure was demonstrated where a monolayer of Ag nanoparticles acted as a wavelength selective reflector. Enhanced light harvesting via plasmonic backscattering into the photovoltaic absorber was observed, resulting in a two-fold improvement in the photocurrent and increased open-circuit voltage. Further, utilizing an optical spacer, the plasmonic backscattering was spectrally controlled, thereby modulating the external quantum efficiency and the photocurrent. Unlike a regular thin-film metallic back reflector, excellent off-resonance optical transmission in excess of 80% was observed from the Ag nanoparticles, making this structure highly suitable for semi-transparent and multi-junction photovoltaic applications.

  18. High Performance Photovoltaic Project Overview

    SciTech Connect

    Symko-Davies, M.; McConnell, R.

    2005-01-01

    The High-Performance Photovoltaic (HiPerf PV) Project was initiated by the U.S. Department of Energy to substantially increase the viability of photovoltaics (PV) for cost-competitive applications so that PV can contribute significantly to our energy supply and environment in the 21st century. To accomplish this, the National Center for Photovoltaics (NCPV) directs in-house and subcontracted research in high-performance polycrystalline thin-film and multijunction concentrator devices. In this paper, we describe the recent research accomplishments in the in-house directed efforts and the research efforts under way in the subcontracted area.

  19. Characterization of Thin Films by XAFS: Application to Spintronics Materials

    SciTech Connect

    Heald, Steve M.; Kaspar, Tiffany C.; Droubay, Timothy C.; Chambers, Scott A.

    2009-10-25

    X-ray absorption fine structure (XAFS) has proven very valuable in characterizing thin films. This is illustrated with some examples from the area of diluted magnetic semiconductor (DMS) materials for spintronics applications. A promising route to DMS materials is doping of oxides such as TiO2 and ZnO with magnetic atoms such as Co. These can be grown as epitaxial thin films on various substrates. XAFS is especially valuable for characterizing the dopant atoms. The near edge region is sensitive to the symmetry of the bonding and valence of the dopants, and the extended XAFS can determine the details of the lattice site. XAFS is also valuable for detecting metallic nanoparticles. These can be difficult to detect by other methods, and can give a spurious magnetic signal. The power of XAFS is illustrated by examples from studies on Co doped ZnO films.

  20. Photovoltaic device having light transmitting electrically conductive stacked films

    DOEpatents

    Weber, Michael F.; Tran, Nang T.; Jeffrey, Frank R.; Gilbert, James R.; Aspen, Frank E.

    1990-07-10

    A light transmitting electrically conductive stacked film, useful as a light transmitting electrode, including a first light transmitting electrically conductive layer, having a first optical thickness, a second light transmitting layer, having a second optical thickness different from the optical thickness of the first layer, and an electrically conductive metallic layer interposed between and in initimate contact with the first and second layers.

  1. High quality transparent conducting oxide thin films

    DOEpatents

    Gessert, Timothy A.; Duenow, Joel N.; Barnes, Teresa; Coutts, Timothy J.

    2012-08-28

    A transparent conducting oxide (TCO) film comprising: a TCO layer, and dopants selected from the elements consisting of Vanadium, Molybdenum, Tantalum, Niobium, Antimony, Titanium, Zirconium, and Hafnium, wherein the elements are n-type dopants; and wherein the transparent conducting oxide is characterized by an improved electron mobility of about 42 cm.sup.2/V-sec while simultaneously maintaining a high carrier density of .about.4.4e.times.10.sup.20 cm.sup.-3.

  2. Thin-film metal coated insulation barrier in a Josephson tunnel junction. [Patent application

    DOEpatents

    Hawkins, G.A.; Clarke, J.

    1975-10-31

    A highly stable, durable, and reproducible Josephson tunnel junction consists of a thin-film electrode of a hard superconductor, a thin oxide insulation layer over the electrode constituting a Josephson tunnel junction barrier, a thin-film layer of stabilizing metal over the barrier, and a second thin-film hard superconductive electrode over the stabilizing film. The thin stabilizing metal film is made only thick enough to limit penetration of the electrode material through the insulation layer so as to prevent a superconductive short.

  3. Thin film composition with biological substance and method of making

    SciTech Connect

    Campbell, A.A.; Song, L.

    1999-09-28

    The invention provides a thin-film composition comprising an underlying substrate of a first material including a plurality of attachment sites; a plurality of functional groups chemically attached to the attachment sites of the underlying substrate; and a thin film of a second material deposited onto the attachment sites of the underlying substrate, and a biologically active substance deposited with the thin-film. Preferably the functional groups are attached to a self assembling monolayer attached to the underlying substrate. Preferred functional groups attached to the underlying substrate are chosen from the group consisting of carboxylates, sulfonates, phosphates, optionally substituted, linear or cyclo, alkyl, alkene, alkyne, aryl, alkylaryl, amine, hydroxyl, thiol, silyl, phosphoryl, cyano, metallocenyl, carbonyl, and polyphosphate. Preferred materials for the underlying substrate are selected from the group consisting of a metal, a metal alloy, a plastic, a polymer, a proteic film, a membrane, a glass or a ceramic. The second material is selected from the group consisting of inorganic crystalline structures, inorganic amorphous structures, organic crystalline structures, and organic amorphous structures. Preferred second materials are phosphates, especially calcium phosphates and most particularly calcium apatite. The biologically active molecule is a protein, peptide, DNA segment, RNA segment, nucleotide, polynucleotide, nucleoside, antibiotic, antimicrobial, radioisotope, chelated radioisotope, chelated metal, metal salt, anti-inflammatory, steroid, nonsteroid anti-inflammatory, analgesic, antihistamine, receptor binding agent, or chemotherapeutic agent, or other biologically active material. Preferably the biologically active molecule is an osteogenic factor consisting of the compositions listed above.

  4. Thin film composition with biological substance and method of making

    DOEpatents

    Campbell, Allison A.; Song, Lin

    1999-01-01

    The invention provides a thin-film composition comprising an underlying substrate of a first material including a plurality of attachment sites; a plurality of functional groups chemically attached to the attachment sites of the underlying substrate; and a thin film of a second material deposited onto the attachment sites of the underlying substrate, and a biologically active substance deposited with the thin-film. Preferably the functional groups are attached to a self assembling monolayer attached to the underlying substrate. Preferred functional groups attached to the underlying substrate are chosen from the group consisting of carboxylates, sulfonates, phosphates, optionally substituted, linear or cyclo, alkyl, alkene, alkyne, aryl, alkylaryl, amine, hydroxyl, thiol, silyl, phosphoryl, cyano, metallocenyl, carbonyl, and polyphosphate. Preferred materials for the underlying substrate are selected from the group consisting of a metal, a metal alloy, a plastic, a polymer, a proteic film, a membrane, a glass or a ceramic. The second material is selected from the group consisting of inorganic crystalline structures, inorganic amorphus structures, organic crystalline structures, and organic amorphus structures. Preferred second materials are phosphates, especially calcium phosphates and most particularly calcium apatite. The biologically active molecule is a protein, peptide, DNA segment, RNA segment, nucleotide, polynucleotide, nucleoside, antibiotic, antimicrobal, radioisotope, chelated radioisotope, chelated metal, metal salt, anti-inflamatory, steriod, nonsteriod anti-inflammatory, analgesic, antihistamine, receptor binding agent, or chemotherapeutic agent, or other biologically active material. Preferably the biologically active molecule is an osteogenic factor the compositions listed above.

  5. Quantum states of neutrons in magnetic thin films

    SciTech Connect

    Radu, F.; Zabel, H.; Leiner, V.; Wolff, M.; Ignatovich, V.K.

    2005-06-01

    We have studied experimentally and theoretically the interaction of polarized neutrons with magnetic thin films and magnetic multilayers. In particular, we have analyzed the behavior of the critical edges for total external reflection in both cases. For a single film we have observed experimentally and theoretically a simple behavior: the critical edges remain fixed and the intensity varies according to the angle between the polarization axis and the magnetization vector inside the film. For the multilayer case we find that the critical edges for spin-up and spin-down polarized neutrons move toward each other as a function of the angle between the magnetization vectors in adjacent ferromagnetic films. Although the results for multilayers and single thick layers appear to be different, in fact, the same spinor method explains both results. An interpretation of the critical edges behavior for the multilyers as a superposition of ferromagnetic and antifferomagnetic states is given.

  6. Method for bonding thin film thermocouples to ceramics

    DOEpatents

    Kreider, Kenneth G.

    1993-01-01

    A method is provided for adhering a thin film metal thermocouple to a ceramic substrate used in an environment up to 700 degrees Centigrade, such as at a cylinder of an internal combustion engine. The method includes the steps of: depositing a thin layer of a reactive metal on a clean ceramic substrate; and depositing thin layers of platinum and a platinum-10% rhodium alloy forming the respective legs of the thermocouple on the reactive metal layer. The reactive metal layer serves as a bond coat between the thin noble metal thermocouple layers and the ceramic substrate. The thin layers of noble metal are in the range of 1-4 micrometers thick. Preferably, the ceramic substrate is selected from the group consisting of alumina and partially stabilized zirconia. Preferably, the thin layer of reactive metal is in the range of 0.015-0.030 micrometers (15-30 nanometers) thick. The preferred reactive metal is chromium. Other reactive metals may be titanium or zirconium. The thin layer of reactive metal may be deposited by sputtering in ultra high purity argon in a vacuum of approximately 2 milliTorr (0.3 Pascals).

  7. Thin Film Packaging Solutions for High Efficiency OLED Lighting Products

    SciTech Connect

    2008-06-30

    The objective of the 'Thin Film Packaging Solutions for High Efficiency OLED Lighting Products' project is to demonstrate thin film packaging solutions based on SiC hermetic coatings that, when applied to glass and plastic substrates, support OLED lighting devices by providing longer life with greater efficiency at lower cost than is currently available. Phase I Objective: Demonstrate thin film encapsulated working phosphorescent OLED devices on optical glass with lifetime of 1,000 hour life, CRI greater than 75, and 15 lm/W. Phase II Objective: Demonstrate thin film encapsulated working phosphorescent OLED devices on plastic or glass composite with 25 lm/W, 5,000 hours life, and CRI greater than 80. Phase III Objective: Demonstrate 2 x 2 ft{sup 2} thin film encapsulated working phosphorescent OLED with 40 lm/W, 10,000 hour life, and CRI greater than 85. This report details the efforts of Phase III (Budget Period Three), a fourteen month collaborative effort that focused on optimization of high-efficiency phosphorescent OLED devices and thin-film encapsulation of said devices. The report further details the conclusions and recommendations of the project team that have foundation in all three budget periods for the program. During the conduct of the Thin Film Packaging Solutions for High Efficiency OLED Lighting Products program, including budget period three, the project team completed and delivered the following achievements: (1) a three-year marketing effort that characterized the near-term and longer-term OLED market, identified customer and consumer lighting needs, and suggested prototype product concepts and niche OLED applications lighting that will give rise to broader market acceptance as a source for wide area illumination and energy conservation; (2) a thin film encapsulation technology with a lifetime of nearly 15,000 hours, tested by calcium coupons, while stored at 16 C and 40% relative humidity ('RH'). This encapsulation technology was characterized

  8. Novel thin-film CuInSe sub 2 fabrication

    SciTech Connect

    Mooney, G.D.; Hermann, A.M. )

    1992-03-01

    This report describes research in Rapid Thermal Processing (RTP), a process that allows the formation of CuInSe{sub 2} without the use of H{sub 2}Se. RTP is a well-established method of rapidly achieving temperatures necessary to melt and recrystallize materials such as Si and and silicides. RTP processes can rapidly and uniformly heat large surface areas to hundreds of degrees Celsius. RTP is the most promising method of rapid recrystallization studied to date, being readily scalable from the research to the production level. The approach to the experiment was divided into two sections: (1) fabricating the precursor film and (2) processing the precursor film. The objective of the first phase of the work was to fabricate the thin films by RTP, then fully characterize them, to demonstrate the viability of the process as a method by which to make device-quality CuInSe{sub 2}. The second phase was to demonstrate that material made by this method could be used to make an active photovoltaic device. 24 refs.

  9. Dip coated nanocrystalline CdZnS thin films for solar cell application

    SciTech Connect

    Dongre, J. K. Chaturvedi, Mahim; Patil, Yuvraj; Sharma, Sandhya; Jain, U. K.

    2015-07-31

    Nanocrystalline cadmium sulfide (CdS) and zinc cadmium sulfide (ZnCdS) thin films have been grown via simple and low cost dip coating technique. The prepared films are characterized by X-ray diffraction (XRD), atomic force microscopic (AFM) and UV-VIS spectrophotometer techniques to reveal their structural, morphological and optical properties. XRD shows that both samples grown have zinc blende structure. The grain size is calculated as 6.2 and 8 nm using Scherrer’s formula. The band gap value of CdS and CdZnS film is estimated to be 2.58 and 2.69 eV respectively by UV-vis spectroscopy. Photoelectrochemical (PEC) investigations are carried out using cell configuration as n-CdZnS/(1M NaOH + 1M Na2S + 1M S)/C. The photovoltaic output characteristic is used to calculate fill-factor (FF) and solar conversion efficiency (η)

  10. Compositional depth profiling of TaCN thin films

    SciTech Connect

    Adelmann, Christoph; Conard, Thierry; Franquet, Alexis; Brijs, Bert; Munnik, Frans; Burgess, Simon; Witters, Thomas; Meersschaut, Johan; Kittl, Jorge A.; Vandervorst, Wilfried; Van Elshocht, Sven

    2012-07-15

    The composition profiling of thin TaCN films was studied. For the composition profile determination using x-ray photoemission spectrometry (XPS) in combination with Ar sputtering, preferential sputtering effects of N with respect to Ta and C were found to lead to inaccurate elemental concentrations. Sputter yield calculations for the given experimental conditions allowed for the correction of a part of the error, leading to fair accuracy by reference-free measurements. Further improvement of the accuracy was demonstrated by the calibration of the XPS compositions against elastic recoil detection analysis (ERDA) results. For Auger electron spectrometry (AES) in combination with Ar sputtering, accurate results required the calibration against ERDA. Both XPS and AES allowed for a reliable and accurate determination of the compositional profiles of TaCN-based thin films after calibration. Time-of-flight secondary-ion mass spectrometry was also used to assess the composition of the TaCN films. However, the analysis was hampered by large matrix effects due to small unintentional oxygen contents in the films. Energy-dispersive x-ray spectrometry is also discussed, and it is shown that an accurate reference-free measurement of the average film concentration can be achieved.

  11. Durable silver thin film coating for diffraction gratings

    DOEpatents

    Wolfe, Jesse D.; Britten, Jerald A.; Komashko, Aleksey M.

    2006-05-30

    A durable silver film thin film coated non-planar optical element has been developed to replace Gold as a material for fabricating such devices. Such a coating and resultant optical element has an increased efficiency and is resistant to tarnishing, can be easily stripped and re-deposited without modifying underlying grating structure, improves the throughput and power loading of short pulse compressor designs for ultra-fast laser systems, and can be utilized in variety of optical and spectrophotometric systems, particularly high-end spectrometers that require maximized efficiency.

  12. Laser-induced metallic nanograined thin films processing

    SciTech Connect

    Tosa, Nicoleta E-mail: florin.toadere@itim-cj.ro; Toadere, Florin E-mail: florin.toadere@itim-cj.ro; Hojbota, Calin E-mail: florin.toadere@itim-cj.ro; Tosa, Valer E-mail: florin.toadere@itim-cj.ro

    2013-11-13

    A direct laser writing method for designing metallic nanograined thin films is presented. This method takes advantage of photon conversion within a chemical process localized at the focal point. A computer controlled positioning system allows the control of experimental parameters and spatial resolution of the pattern. Spectroscopic investigations reveal variable attenuation of the optical properties in UV-visible range and a spectral imaging processing algorithm simulated the functionality of these films in visible light. This could be an important step for obtaining neutral density attenuators.

  13. Heteroepitaxial growth of Pt and Au thin films on MgO single crystals by bias-assisted sputtering

    DOE PAGES [OSTI]

    Tolstova, Yulia; Omelchenko, Stefan T.; Shing, Amanda M.; Atwater, Harry A.

    2016-03-17

    The crystallographic orientation of a metal affects its surface energy and structure, and has profound implications for surface chemical reactions and interface engineering, which are important in areas ranging from optoelectronic device fabrication to catalysis. However, it can be very difficult and expensive to manufacture, orient, and cut single crystal metals along different crystallographic orientations, especially in the case of precious metals. One approach is to grow thin metal films epitaxially on dielectric substrates. In this work, we report on growth of Pt and Au films on MgO single crystal substrates of (100) and (110) surface orientation for use asmore » epitaxial templates for thin film photovoltaic devices. We develop bias-assisted sputtering for deposition of oriented Pt and Au films with sub-nanometer roughness. We show that biasing the substrate decreases the substrate temperature necessary to achieve epitaxial orientation, with temperature reduction from 600 to 350 °C for Au, and from 750 to 550 °C for Pt, without use of transition metal seed layers. Additionally, this temperature can be further reduced by reducing the growth rate. Biased deposition with varying substrate bias power and working pressure also enables control of the film morphology and surface roughness.« less

  14. Stable thin film resistors using double layer structure

    SciTech Connect

    Jia, Q.X.; Lee, H.J.; Ma, E.; Anderson, W.A.; Collins, F.M.

    1995-06-01

    Highly stable bilayer thin film resistors, which consist of an underlying layer of tantalum nitride and of a capping layer of ruthenium oxide, were developed by taking advantage of the desired characteristics of two different materials in a single system. The resistors fabricated in such a way were highly stable under power loading or thermal cycling. Resistors with one digit temperature coefficient of resistance could be easily controlled by the layer thickness ratio of the tantalum nitride to the ruthenium oxide and the {ital ex} {ital situ} annealing temperature or duration. Auger electron spectroscopy depth profile on the thin films indicates that the ruthenium oxide layer is well defined for the as-deposited form. Nevertheless, interdiffusion takes place after thermal treatment of the bilayer which is used to tune the temperature coefficient of resistance and to stabilize the resistance of the resistors.

  15. Multiple routes for vortex depinning in amorphous thin film superconductors

    SciTech Connect

    Groenbech-Jensen, N.; Bishop, A.R.; Dominquez, D.

    1996-07-01

    ffWe present simulations of vortex dynamics in amorphous two-dimensional thin film superconductors, using a new exact method to evaluate long range interactions between vortices. We find that the onset of vortex motion is dominated by filamentary channels of flow. There are multiple patterns of filamentary flow which are stable in a wide range of bias current. As a consequence, there are multiple steps in the differential resistance, each step corresponding to a different pattern of filamentary flow. This results in a strong history dependence of the depinning current and current voltage characteristics. Our results are in agreement with recent experiments on amorphous Mo{sub 77}Ge{sub 23} thin films.

  16. Electrochemical solar cells using CdSe thin film electrodes

    SciTech Connect

    Xiao, Xu-Rui; Tien, H.Ti.

    1983-01-01

    Electrochemical photocells consisting of a CdSe thin film anode and a Pt cathode immersed in 1M Na/sub 2/S-NaOH-S solution have been studied. CdSe thin films were formed on Ti, Cr, Mo, SnO/sub 2/, glassy carbon, and graphite substrates by coating an aqueous mixture of CdSe, ZnCl/sub 2/, and surfactant, subsequently sintering at 400/sup 0/-500/sup 0/C in air. The current-voltage (I-V) relations, output power efficiency, open-circuit voltage, and short-circuit current were measured. Seven percent power conversion efficiency was obtained at 20 mW/cm/sup 2/ light intensity after photoetching. The monochromatic I-V curves were analyzed.

  17. Method for formation of thin film transistors on plastic substrates

    DOEpatents

    Carey, P.G.; Smith, P.M.; Sigmon, T.W.; Aceves, R.C.

    1998-10-06

    A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The process relies on techniques for depositing semiconductors, dielectrics, and metals at low temperatures; crystallizing and doping semiconductor layers in the TFT with a pulsed energy source; and creating top-gate self-aligned as well as back-gate TFT structures. The process enables the fabrication of amorphous and polycrystalline channel silicon TFTs at temperatures sufficiently low to prevent damage to plastic substrates. The process has use in large area low cost electronics, such as flat panel displays and portable electronics. 5 figs.

  18. Method for formation of thin film transistors on plastic substrates

    DOEpatents

    Carey, Paul G.; Smith, Patrick M.; Sigmon, Thomas W.; Aceves, Randy C.

    1998-10-06

    A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The process relies on techniques for depositing semiconductors, dielectrics, and metals at low temperatures; crystallizing and doping semiconductor layers in the TFT with a pulsed energy source; and creating top-gate self-aligned as well as back-gate TFT structures. The process enables the fabrication of amorphous and polycrystalline channel silicon TFTs at temperatures sufficiently low to prevent damage to plastic substrates. The process has use in large area low cost electronics, such as flat panel displays and portable electronics.

  19. Thin film battery and method for making same

    DOEpatents

    Bates, John B.; Dudney, Nancy J.; Gruzalski, Greg R.; Luck, Christopher F.

    1994-01-01

    Described is a thin-film battery, especially a thin-film microbattery, and a method for making same having application as a backup or primary integrated power source for electronic devices. The battery includes a novel electrolyte which is electrochemically stable and does not react with the lithium anode and a novel vanadium oxide cathode Configured as a microbattery, the battery can be fabricated directly onto a semiconductor chip, onto the semiconductor die or onto any portion of the chip carrier. The battery can be fabricated to any specified size or shape to meet the requirements of a particular application. The battery is fabricated of solid state materials and is capable of operation between -15.degree. C. and 150.degree. C.

  20. Thin film battery and method for making same

    DOEpatents

    Bates, J.B.; Dudney, N.J.; Gruzalski, G.R.; Luck, C.F.

    1994-08-16

    Described is a thin-film battery, especially a thin-film microbattery, and a method for making same having application as a backup or primary integrated power source for electronic devices. The battery includes a novel electrolyte which is electrochemically stable and does not react with the lithium anode and a novel vanadium oxide cathode. Configured as a microbattery, the battery can be fabricated directly onto a semiconductor chip, onto the semiconductor die or onto any portion of the chip carrier. The battery can be fabricated to any specified size or shape to meet the requirements of a particular application. The battery is fabricated of solid state materials and is capable of operation between [minus]15 C and 150 C. 9 figs.

  1. Optical sensors and multisensor arrays containing thin film electroluminescent devices

    DOEpatents

    Aylott, Jonathan W.; Chen-Esterlit, Zoe; Friedl, Jon H.; Kopelman, Raoul; Savvateev, Vadim N.; Shinar, Joseph

    2001-12-18

    Optical sensor, probe and array devices for detecting chemical biological, and physical analytes. The devices include an analyte-sensitive layer optically coupled to a thin film electroluminescent layer which activates the analyte-sensitive layer to provide an optical response. The optical response varies depending upon the presence of an analyte and is detected by a photodetector and analyzed to determine the properties of the analyte.

  2. Preparation of redox polymer cathodes for thin film rechargeable batteries

    DOEpatents

    Skotheim, T.A.; Lee, H.S.; Okamoto, Yoshiyuki.

    1994-11-08

    The present invention relates to the manufacture of thin film solid state electrochemical devices using composite cathodes comprising a redox polymer capable of undergoing oxidation and reduction, a polymer solid electrolyte and conducting carbon. The polymeric cathode material is formed as a composite of radiation crosslinked polymer electrolytes and radiation crosslinked redox polymers based on polysiloxane backbones with attached organosulfur side groups capable of forming sulfur-sulfur bonds during electrochemical oxidation.

  3. Method for making dense crack free thin films

    DOEpatents

    Jacobson, Craig P.; Visco, Steven J.; De Jonghe, Lutgard C.

    2007-01-16

    The process described herein provides a simple and cost effective method for making crack free, high density thin ceramic film. The steps involve depositing a layer of a ceramic material on a porous or dense substrate. The deposited layer is compacted and then the resultant laminate is sintered to achieve a higher density than would have been possible without the pre-firing compaction step.

  4. Formation of thin-film resistors on silicon substrates

    DOEpatents

    Schnable, George L.; Wu, Chung P.

    1988-11-01

    The formation of thin-film resistors by the ion implantation of a metallic conductive layer in the surface of a layer of phosphosilicate glass or borophosphosilicate glass which is deposited on a silicon substrate. The metallic conductive layer materials comprise one of the group consisting of tantalum, ruthenium, rhodium, platinum and chromium silicide. The resistor is formed and annealed prior to deposition of metal, e.g. aluminum, on the substrate.

  5. MEMS-based thin-film fuel cells

    DOEpatents

    Jankowksi, Alan F.; Morse, Jeffrey D.

    2003-10-28

    A micro-electro-mechanical systems (MEMS) based thin-film fuel cells for electrical power applications. The MEMS-based fuel cell may be of a solid oxide type (SOFC), a solid polymer type (SPFC), or a proton exchange membrane type (PEMFC), and each fuel cell basically consists of an anode and a cathode separated by an electrolyte layer. Additionally catalyst layers can also separate the electrodes (cathode and anode) from the electrolyte. Gas manifolds are utilized to transport the fuel and oxidant to each cell and provide a path for exhaust gases. The electrical current generated from each cell is drawn away with an interconnect and support structure integrated with the gas manifold. The fuel cells utilize integrated resistive heaters for efficient heating of the materials. By combining MEMS technology with thin-film deposition technology, thin-film fuel cells having microflow channels and full-integrated circuitry can be produced that will lower the operating temperature an will yield an order of magnitude greater power density than the currently known fuel cells.

  6. MultiLayer solid electrolyte for lithium thin film batteries

    DOEpatents

    Lee, Se -Hee; Tracy, C. Edwin; Pitts, John Roland; Liu, Ping

    2015-07-28

    A lithium metal thin-film battery composite structure is provided that includes a combination of a thin, stable, solid electrolyte layer [18] such as Lipon, designed in use to be in contact with a lithium metal anode layer; and a rapid-deposit solid electrolyte layer [16] such as LiAlF.sub.4 in contact with the thin, stable, solid electrolyte layer [18]. Batteries made up of or containing these structures are more efficient to produce than other lithium metal batteries that use only a single solid electrolyte. They are also more resistant to stress and strain than batteries made using layers of only the stable, solid electrolyte materials. Furthermore, lithium anode batteries as disclosed herein are useful as rechargeable batteries.

  7. DOE/OER-sponsored basic research in high-efficiency photovoltaics

    SciTech Connect

    Deb, S.K.; Benner, J.P.

    1996-05-01

    A high-efficiency photovoltaic project involving many of the national laboratories and several universities has been initiated under the umbrella of the U.S. Department of Energy (DOE) Center of Excellence for the Synthesis and Processing of Advanced Materials. The objectives of this project are to generate advances in fundamental scientific understanding that will impact the efficiency, cost and reliability of thin-film photovoltaic cells. The project is focused on two areas. (1) Silicon-Based Thin Films, in which key scientific and technological problems involving amorphous and polycrystalline silicon thin films will be addressed, and (2) Next-Generation Thin-Film Photovoltaics, which will be concerned with the possibilities of new advances and breakthroughs in the materials and physics of photovoltaics using non-silicon-based materials.

  8. Preparation of LiMn{sub 2}O{sub 4} cathode thin films for thin film lithium secondary batteries by a mist CVD process

    SciTech Connect

    Tadanaga, Kiyoharu; Yamaguchi, Akihiro; Sakuda, Atsushi; Hayashi, Akitoshi; Tatsumisago, Masahiro; Duran, Alicia; Aparacio, Mario

    2014-05-01

    Highlights: LiMn{sub 2}O{sub 4} thin films were prepared by using the mist CVD process. An aqueous solution of lithium and manganese acetates is used for the precursor solution. The cell with the LiMn{sub 2}O{sub 4} thin films exhibited a capacity of about 80 mAh/g. The cell showed good cycling performance during 10 cycles. - Abstract: LiMn{sub 2}O{sub 4} cathode thin films for thin film lithium secondary batteries were prepared by using so-called the mist CVD process, employing an aqueous solution of lithium acetate and manganese acetate, as the source of Li and Mn, respectively. The aqueous solution of starting materials was ultrasonically atomized to form mist particles, and mists were transferred by nitrogen gas to silica glass substrate to form thin films. FE-SEM observation revealed that thin films obtained by this process were dense and smooth, and thin films with a thickness of about 750 nm were obtained. The electrochemical cell with the thin films obtained by sintering at 700 C exhibited a capacity of about 80 mAh/g, and the cell showed good cycling performance during 10 cycles.

  9. Studies on atomic layer deposition of IRMOF-8 thin films

    SciTech Connect

    Salmi, Leo D. Heikkil, Mikko J.; Vehkamki, Marko; Puukilainen, Esa; Ritala, Mikko; Sajavaara, Timo

    2015-01-15

    Deposition of IRMOF-8 thin films by atomic layer deposition was studied at 260320?C. Zinc acetate and 2,6-naphthalenedicarboxylic acid were used as the precursors. The as-deposited amorphous films were crystallized in 70% relative humidity at room temperature resulting in an unknown phase with a large unit cell. An autoclave with dimethylformamide as the solvent was used to recrystallize the films into IRMOF-8 as confirmed by grazing incidence x-ray diffraction. The films were further characterized by high temperature x-ray diffraction (HTXRD), field emission scanning electron microscopy, Fourier transform infrared spectroscopy (FTIR), time-of-flight elastic recoil detection analysis (TOF-ERDA), nanoindentation, and energy-dispersive x-ray spectroscopy. HTXRD measurements revealed similar behavior to bulk IRMOF-8. According to TOF-ERDA and FTIR, composition of the films was similar to IRMOF-8. Through-porosity was confirmed by loading the films with palladium using Pd(thd){sub 2} (thd?=?2,2,6,6-tetramethyl-3,5-heptanedionato) as the precursor.

  10. Supercritical fluid molecular spray thin films and fine powders

    DOEpatents

    Smith, Richard D.

    1988-01-01

    Solid films are deposited, or fine powders formed, by dissolving a solid material into a supercritical fluid solution at an elevated pressure and then rapidly expanding the solution through a short orifice into a region of relatively low pressure. This produces a molecular spray which is directed against a substrate to deposit a solid thin film thereon, or discharged into a collection chamber to collect a fine powder. The solvent is vaporized and pumped away. Solution pressure is varied to determine, together with flow rate, the rate of deposition and to control in part whether a film or powder is produced and the granularity of each. Solution temperature is varied in relation to formation of a two-phase system during expansion to control porosity of the film or powder. A wide variety of film textures and powder shapes are produced of both organic and inorganic compounds. Films are produced with regular textural feature dimensions of 1.0-2.0 .mu.m down to a range of 0.01 to 0.1 .mu.m. Powders are formed in very narrow size distributions, with average sizes in the range of 0.02 to 5 .mu.m.

  11. Sputter deposition for multi-component thin films

    DOEpatents

    Krauss, Alan R.; Auciello, Orlando

    1990-01-01

    Ion beam sputter-induced deposition using a single ion beam and a multicomponent target is capable of reproducibly producing thin films of arbitrary composition, including those which are close to stoichiometry. Using a quartz crystal deposition monitor and a computer controlled, well-focused ion beam, this sputter-deposition approach is capable of producing metal oxide superconductors and semiconductors of the superlattice type such as GaAs-AlGaAs as well as layered metal/oxide/semiconductor/superconductor structures. By programming the dwell time for each target according to the known sputtering yield and desired layer thickness for each material, it is possible to deposit composite films from a well-controlled sub-monolayer up to thicknesses determined only by the available deposition time. In one embodiment, an ion beam is sequentially directed via a set of X-Y electrostatic deflection plates onto three or more different element or compound targets which are constituents of the desired film. In another embodiment, the ion beam is directed through an aperture in the deposition plate and is displaced under computer control to provide a high degree of control over the deposited layer. In yet another embodiment, a single fixed ion beam is directed onto a plurality of sputter targets in a sequential manner where the targets are each moved in alignment with the beam under computer control in forming a multilayer thin film. This controlled sputter-deposition approach may also be used with laser and electron beams.

  12. Sputter deposition for multi-component thin films

    DOEpatents

    Krauss, A.R.; Auciello, O.

    1990-05-08

    Ion beam sputter-induced deposition using a single ion beam and a multicomponent target is capable of reproducibly producing thin films of arbitrary composition, including those which are close to stoichiometry. Using a quartz crystal deposition monitor and a computer controlled, well-focused ion beam, this sputter-deposition approach is capable of producing metal oxide superconductors and semiconductors of the superlattice type such as GaAs-AlGaAs as well as layered metal/oxide/semiconductor/superconductor structures. By programming the dwell time for each target according to the known sputtering yield and desired layer thickness for each material, it is possible to deposit composite films from a well-controlled sub-monolayer up to thicknesses determined only by the available deposition time. In one embodiment, an ion beam is sequentially directed via a set of X-Y electrostatic deflection plates onto three or more different element or compound targets which are constituents of the desired film. In another embodiment, the ion beam is directed through an aperture in the deposition plate and is displaced under computer control to provide a high degree of control over the deposited layer. In yet another embodiment, a single fixed ion beam is directed onto a plurality of sputter targets in a sequential manner where the targets are each moved in alignment with the beam under computer control in forming a multilayer thin film. This controlled sputter-deposition approach may also be used with laser and electron beams. 10 figs.

  13. Long-laser-pulse method of producing thin films

    DOEpatents

    Balooch, Mehdi; Olander, Donald K.; Russo, Richard E.

    1991-01-01

    A method of depositing thin films by means of laser vaporization employs a long-pulse laser (Nd-glass of about one millisecond duration) with a peak power density typically in the range 10.sup.5 -10.sup.6 W/cm.sup.2. The method may be used to produce high T.sub.c superconducting films of perovskite material. In one embodiment, a few hundred nanometers thick film of YBa.sub.2 Cu.sub.3 O.sub.7-x is produced on a SrTiO.sub.3 crystal substrate in one or two pulses. In situ-recrystallization and post-annealing, both at elevated temperature and in the presence of an oxidizing agen The invention described herein arose in the course of, or under, Contract No. DE-C03-76SF0098 between the United States Department of Energy and the University of California.

  14. Oriented niobate ferroelectric thin films for electrical and optical devices and method of making such films

    DOEpatents

    Wessels, B.W.; Nystrom, M.J.

    1998-05-19

    Sr{sub x}Ba{sub 1{minus}x}Nb{sub 2}O{sub 6}, where x is greater than 0.25 and less than 0.75, and KNbO{sub 3} ferroelectric thin films metalorganic chemical vapor deposited on amorphous or crystalline substrate surfaces to provide a crystal axis of the film exhibiting a high dielectric susceptibility, electro-optic coefficient, and/or nonlinear optic coefficient oriented preferentially in a direction relative to a crystalline or amorphous substrate surface are disclosed. Such films can be used in electronic, electro-optic, and frequency doubling components. 8 figs.

  15. Oriented niobate ferroelectric thin films for electrical and optical devices and method of making such films

    DOEpatents

    Wessels, Bruce W.; Nystrom, Michael J.

    1998-01-01

    Sr.sub.x Ba.sub.1-x Nb.sub.2 O.sub.6, where x is greater than 0.25 and less than 0.75, and KNbO.sub.3 ferroelectric thin films metalorganic chemical vapor deposited on amorphous or crystalline substrate surfaces to provide a crystal axis of the film exhibiting a high dielectric susceptibility, electro-optic coefficient, and/or nonlinear optic coefficient oriented preferentially in a direction relative to a crystalline or amorphous substrate surface. Such films can be used in electronic, electro-optic, and frequency doubling components.

  16. Characterization of ZnO thin films grown on different p-Si substrate elaborated by solgel spin-coating method

    SciTech Connect

    Chebil, W.; Fouzri, A.; Fargi, A.; Azeza, B.; Zaaboub, Z.; and others

    2015-10-15

    Highlights: • High quality ZnO thin films grown on different p-Si substrates were successful obtained by sol–gel process. • PL measurement revealed that ZnO thin film grown on porous Si has the better optical quality. • I–V characteristics for all heterojunctions exhibit successful diode formation. • The diode ZnO/PSi shows a better photovoltaic effect under illumination with a maximum {sub Voc} of 0.2 V. - Abstract: In this study, ZnO thin films are deposited by sol–gel technique on p-type crystalline silicon (Si) with [100] orientation, etched silicon and porous silicon. The structural analyses showed that the obtained thin films were polycrystalline with a hexagonal wurtzite structure and preferentially oriented along the c-axis direction. Morphological study revealed the presence of rounded and facetted grains irregularly distributed on the surface of all samples. PL spectra at room temperature revealed that ZnO thin film grown on porous Si has a strong UV emission with low defects in the visible region comparing with ZnO grown on plat Si and etched Si surface. The heterojunction parameters were evaluated from the (I–V) under dark and illumination at room temperature. The ideality factor, barrier height and series resistance of heterojunction grown on different p-Si substrates are determined by using different methods. Best electrical properties are obtained for ZnO layer deposited on porous silicon.

  17. Thin film reactions on alloy semiconductor substrates

    SciTech Connect

    Olson, D.A.

    1990-11-01

    The interactions between Pt and In{sub .53}Ga{sub .47}As have been studied. In{sub .53}Ga{sub .47}As substrates with 70nm Pt films were encapsulated in SiO{sub 2}, and annealed up to 600{degree}C in flowing forming gas. The composition and morphology of the reaction product phases were studied using x-ray diffraction, Auger depth profiling, and transmission electron microscopy. The reaction kinetics were examined with Rutherford Backscattering. Results show that Pt/In{sub .53}Ga{sub .47}As reacts to form many of the reaction products encountered in the Pt/GaAs and Pt/InP reactions: PtGa, Pt{sub 3}Ga, and PtAs{sub 2}. In addition, a ternary phase, Pt(In:Ga){sub 2}, develops, which is a solid solution between PtIn{sub 2} and PtGa{sub 2}. The amount of Ga in the ternary phase increases with annealing temperature, which causes a decrease in the lattice parameter of the phase. The reaction products show a tendency to form layered structures, especially for higher temperatures and longer annealing times. Unlike the binary case, the PtAs{sub 2}, phase is randomly oriented on the substrate, and is intermingle with a significant amount of Pt(In:Ga){sub 2}. Following Pt/In{sub .53}Ga{sub .47}As reactions, two orientation relationships between the Pt(In:Ga){sub 2} product phase and the substrate were observed, despite the large mismatch with the substrate ({approximately}8%). For many metal/compound semiconductor interactions, the reaction rate is diffusion limited, i.e. exhibits a parabolic dependence on time. An additional result of this study was the development of an In-rich layer beneath the reacted layer. The Auger depth profile showed a substantial increase in the sample at this layer. This is a significant result for the production of ohmic contacts, as the Schottky barrier height in this system lower for higher In concentrations. 216 refs.

  18. Zinc Oxide Thin Films Fabricated with Direct Current Magnetron Sputtering Deposition Technique

    SciTech Connect

    Hoon, Jian-Wei; Chan, Kah-Yoong; Krishnasamy, Jegenathan; Tou, Teck-Yong

    2011-03-30

    Zinc oxide (ZnO) is a very promising material for emerging large area electronic applications including thin-film sensors, transistors and solar cells. We fabricated ZnO thin films by employing direct current (DC) magnetron sputtering deposition technique. ZnO films with different thicknesses ranging from 100 nm to 1020 nm were deposited on silicon (Si) substrate. The deposition pressure was varied from 12 mTorr to 25 mTorr. The influences of the film thickness and the deposition pressure on structural properties of the ZnO films were investigated using Mahr surface profilometer and atomic force microscopy (AFM). The experimental results reveal that the film thickness and the deposition pressure play significant role in the structural formation of the deposited ZnO thin films. ZnO films deposited on Si substrates are promising for variety of thin-film sensor applications.

  19. Lattice cluster theory for dense, thin polymer films

    SciTech Connect

    Freed, Karl F.

    2015-04-07

    While the application of the lattice cluster theory (LCT) to study the miscibility of polymer blends has greatly expanded our understanding of the monomer scale molecular details influencing miscibility, the corresponding theory for inhomogeneous systems has not yet emerged because of considerable technical difficulties and much greater complexity. Here, we present a general formulation enabling the extension of the LCT to describe the thermodynamic properties of dense, thin polymer films using a high dimension, high temperature expansion. Whereas the leading order of the LCT for bulk polymer systems is essentially simple Flory-Huggins theory, the highly non-trivial leading order inhomogeneous LCT (ILCT) for a film with L layers already involves the numerical solution of 3(L − 1) coupled, highly nonlinear equations for the various density profiles in the film. The new theory incorporates the essential “transport” constraints of Helfand and focuses on the strict imposition of excluded volume constraints, appropriate to dense polymer systems, rather than the maintenance of chain connectivity as appropriate for lower densities and as implemented in self-consistent theories of polymer adsorption at interfaces. The ILCT is illustrated by presenting examples of the computed profiles of the density, the parallel and perpendicular bonds, and the chain ends for free standing and supported films as a function of average film density, chain length, temperature, interaction with support, and chain stiffness. The results generally agree with expected general trends.

  20. Nanopatterning of ultrananocrystalline diamond thin films via block copolymer lithography.

    SciTech Connect

    Ramanathan, M.; Darling, S. B.; Sumant, A. V.; Auciello, O.

    2010-07-01

    Nanopatterning of diamond surfaces is critical for the development of diamond-based microelectromechanical system/nanoelectromechanical system (MEMS/NEMS), such as resonators or switches. Micro-/nanopatterning of diamond materials is typically done using photolithography or electron beam lithography combined with reactive ion etching (RIE). In this work, we demonstrate a simple process, block copolymer (BCP) lithography, for nanopatterning of ultrananocrystalline diamond (UNCD) films to produce nanostructures suitable for the fabrication of NEMS based on UNCD. In BCP lithography, nanoscale self-assembled polymeric domains serve as an etch mask for pattern transfer. The authors used thin films of a cylinder-forming organic-inorganic BCP, poly(styrene-block-ferrocenyldimethylsilane), PS-b-PFS, as an etch mask on the surface of UNCD films. Orientational control of the etch masking cylindrical PFS blocks is achieved by manipulating the polymer film thickness in concert with the annealing treatment. We have observed that the surface roughness of UNCD layers plays an important role in transferring the pattern. Oxygen RIE was used to etch the exposed areas of the UNCD film underneath the BCP. Arrays of both UNCD posts and wirelike structures have been created using the same starting polymeric materials as the etch mask.

  1. Structure disorder degree of polysilicon thin films grown by different processing: Constant C from Raman spectroscopy

    SciTech Connect

    Wang, Quan; Zhang, Yanmin; Hu, Ran; Ren, Naifei; Ge, Daohan

    2013-11-14

    Flat, low-stress, boron-doped polysilicon thin films were prepared on single crystalline silicon substrates by low pressure chemical vapor deposition. It was found that the polysilicon films with different deposition processing have different microstructure properties. The confinement effect, tensile stresses, defects, and the Fano effect all have a great influence on the line shape of Raman scattering peak. But the effect results are different. The microstructure and the surface layer are two important mechanisms dominating the internal stress in three types of polysilicon thin films. For low-stress polysilicon thin film, the tensile stresses are mainly due to the change of microstructure after thermal annealing. But the tensile stresses in flat polysilicon thin film are induced by the silicon carbide layer at surface. After the thin film doped with boron atoms, the phenomenon of the tensile stresses increasing can be explained by the change of microstructure and the increase in the content of silicon carbide. We also investigated the disorder degree states for three polysilicon thin films by analyzing a constant C. It was found that the disorder degree of low-stress polysilicon thin film larger than that of flat and boron-doped polysilicon thin films due to the phase transformation after annealing. After the flat polysilicon thin film doped with boron atoms, there is no obvious change in the disorder degree and the disorder degree in some regions even decreases.

  2. Photovoltaic characteristics of Pd doped amorphous carbon film/SiO{sub 2}/Si

    SciTech Connect

    Ma Ming; Xue Qingzhong; Chen Huijuan; Zhou Xiaoyan; Xia Dan; Lv Cheng; Xie Jie

    2010-08-09

    The Pd doped amorphous carbon (a-C:Pd) films were deposited on n-Si substrates with or without a native SiO{sub 2} layer using magnetron sputtering. The photovoltaic characteristics of the a-C:Pd/SiO{sub 2}/Si and a-C:Pd/Si junctions were studied. It is found that under light illumination of 15 mW/cm{sup 2} at room temperature, the a-C:Pd/SiO{sub 2}/Si solar cell fabricated at 350 deg. C has a high power conversion efficiency of 4.7%, which is much better than the a-C/Si junctions reported before. The enhanced conversion efficiency is ascribed to the Pd doping and the increase in sp{sup 2}-bonded carbon clusters in the carbon film caused by the high temperature deposition.

  3. Photovoltaic Subcontract Program

    SciTech Connect

    Surek, Thomas; Catalano, Anthony

    1993-03-01

    This report summarizes the fiscal year (FY) 1992 progress of the subcontracted photovoltaic (PV) research and development (R D) performed under the Photovoltaic Advanced Research and Development Project at the National Renewable Energy Laboratory (NREL)-formerly the Solar Energy Research Institute (SERI). The mission of the national PV program is to develop PV technology for large-scale generation of economically competitive electric power in the United States. The technical sections of the report cover the main areas of the subcontract program: the Crystalline Materials and Advanced Concepts project, the Polycrystalline Thin Films project, Amorphous Silicon Research project, the Photovoltaic Manufacturing Technology (PVMaT) project, PV Module and System Performance and Engineering project, and the PV Analysis and Applications Development project. Technical summaries of each of the subcontracted programs provide a discussion of approaches, major accomplishments in FY 1992, and future research directions.

  4. Method for measurement of the density of thin films of small organic molecules

    SciTech Connect

    Xiang Haifeng; Xu Zongxiang; Roy, V. A. L.; Che Chiming; Lai, P. T.

    2007-03-15

    An accurate and sensitive method is reported to measure the thin-film density of vacuum-deposited, small-molecular organic semiconductor materials. A spectrophotometer and surface profiler had been used to determine the mass and thickness of organic thin film, respectively. The calculated density of tris-(8-hydroxyquinolato) aluminum (Alq{sub 3}) thin film was 1.31{+-}0.01 g/cm{sup 3}. Vacuum pressures and thin-film growth rates are found to have less impact on the thin-film density of organic material. However, the thin-film density of organic material strongly depends on its chemical structure and molecular weight. Specifically, the chemical structure determines the density of organic material that affects the molecular volume and intermolecular stacking.

  5. Methods for fabricating thin film III-V compound solar cell

    DOEpatents

    Pan, Noren; Hillier, Glen; Vu, Duy Phach; Tatavarti, Rao; Youtsey, Christopher; McCallum, David; Martin, Genevieve

    2011-08-09

    The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film III-V compound solar cell before it is separated from the substrate. To separate the thin film III-V compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film III-V compound solar cell.

  6. Employing time-resolved terahertz spectroscopy to analyze carrier dynamics in thin-film Cu{sub 2}ZnSn(S,Se){sub 4} absorber layers

    SciTech Connect

    Guglietta, Glenn W.; Baxter, Jason B.; Choudhury, Kaushik Roy; Caspar, Jonathan V.

    2014-06-23

    We report the application of time-resolved terahertz spectroscopy (TRTS) to measure photoexcited carrier lifetimes and mobility, and to determine recombination mechanisms in Cu{sub 2}ZnSn(S,Se){sub 4} (CZTSSe) thin films fabricated from nanocrystal inks. Ultrafast time resolution permits tracking the evolution of carrier density to determine recombination rates and mechanisms. The carrier generation profile was manipulated by varying the photoexcitation wavelength and fluence to distinguish between surface, Shockley-Read-Hall (SRH), radiative, and Auger recombination mechanisms and determine rate constants. Surface and SRH recombination are the dominant mechanisms for the air/CZTSSe/SiO{sub 2}/Si film stack. Diffusion to, and then recombination at, the air-CZTSSe interface occurred on the order of 100 picoseconds, while SRH recombination lifetimes were 1–2 nanoseconds. TRTS measurements can provide information that is complementary to conventional time-resolved photoluminescence measurements and can direct the design of efficient thin film photovoltaics.

  7. Deployable telescope having a thin-film mirror and metering structure

    DOEpatents

    Krumel, Leslie J.; Martin, Jeffrey W.

    2010-08-24

    A deployable thin-film mirror telescope comprises a base structure and a metering structure. The base structure houses a thin-film mirror, which can be rolled for stowage and unrolled for deployment. The metering structure is coupled to the base structure and can be folded for stowage and unfolded for deployment. In the deployed state, the unrolled thin-film mirror forms a primary minor for the telescope and the unfolded metering structure positions a secondary minor for the telescope.

  8. Microwave plasma assisted supersonic gas jet deposition of thin film materials

    DOEpatents

    Schmitt, J.J. III; Halpern, B.L.

    1993-10-26

    An apparatus for fabricating thin film materials utilizing high speed gas dynamics relies on supersonic free jets of carrier gas to transport depositing vapor species generated in a microwave discharge to the surface of a prepared substrate where the vapor deposits to form a thin film. The present invention generates high rates of deposition and thin films of unforeseen high quality at low temperatures. 5 figures.

  9. Phase-Controlled Electrochemical Activity of Epitaxial Spinel Thin films as

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Mg-Cathodes - Joint Center for Energy Storage Research 7, 2015, Research Highlights Phase-Controlled Electrochemical Activity of Epitaxial Spinel Thin films as Mg-Cathodes Using epitaxial thin film methods, two polymorphs of MgMn2O4 (MMO) are stabilized in tetragonal (MMOT) and cubic (MMOC) phases. The MMOT thin film shows negligible activity with no structural changes, while MMOC (normally found at high temperature or high pressure) exhibits reversible Mg2+ activity with associated changes

  10. Ferroelastic switching in a layered-perovskite thin film (Journal Article)

    Office of Scientific and Technical Information (OSTI)

    | SciTech Connect Ferroelastic switching in a layered-perovskite thin film Citation Details In-Document Search Title: Ferroelastic switching in a layered-perovskite thin film Here, a controllable ferroelastic switching in ferroelectric/multiferroic oxides is highly desirable due to the non-volatile strain and possible coupling between lattice and other order parameter in heterostructures. However, a substrate clamping usually inhibits their elastic deformation in thin films without

  11. Structural Studies of Al:ZnO Powders and Thin Films | Stanford...

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    the ZnO lattice, and measure its effect on the crystallinity of thin films prepared by sol-gel techniques, with an aim to understand how these properties affect the film...

  12. Finite-element analysis of the deformation of thin Mylar films...

    Office of Scientific and Technical Information (OSTI)

    Sponsoring Org: USDOE Country of Publication: United States Language: English Subject: 36 ... INDEX; SHRINKAGE; SIMULATION; SOLVENTS; TESTING; THICKNESS; THIN FILMS Word Cloud More ...

  13. Nonlinear optical characterization of ZnS thin film synthesized by chemical spray pyrolysis method

    SciTech Connect

    G, Sreeja V; Anila, E. I. R, Reshmi John, Manu Punnan; V, Sabitha P; Radhakrishnan, P.

    2014-10-15

    ZnS thin film was prepared by Chemical Spray Pyrolysis (CSP) method. The sample was characterized by X-ray diffraction method and Z scan technique. XRD pattern showed that ZnS thin film has hexagonal structure with an average size of about 5.6nm. The nonlinear optical properties of ZnS thin film was studied by open aperture Z-Scan technique using Q-switched Nd-Yag Laser at 532nm. The Z-scan plot showed that the investigated ZnS thin film has saturable absorption behavior. The nonlinear absorption coefficient and saturation intensity were also estimated.

  14. Investigation of the optical properties of MoS{sub 2} thin films...

    Office of Scientific and Technical Information (OSTI)

    ellipsometry Spectroscopic ellipsometry (SE) characterization of layered transition metal dichalcogenide (TMD) thin films grown by vapor phase sulfurization is reported. By...

  15. High Efficiency CdTe and CIGS Thin Film Solar Cells: Highlights...

    Office of Scientific and Technical Information (OSTI)

    Sponsoring Org: USDOE Country of Publication: United States Language: English Subject: 14 SOLAR ENERGY; 36 MATERIALS SCIENCE; EFFICIENCY; ENERGY CONVERSION; SOLAR CELLS; THIN FILMS ...

  16. New Selection Metric for Design of Thin-Film Solar Cell Absorber...

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    New Selection Metric for Design of Thin-Film Solar Cell Absorber Materials Research Details * SLME account s for the physics of absorption, emission, and recombination by directly ...

  17. Photoelectrochemical etching of epitaxial InGaN thin films: Self...

    Office of Scientific and Technical Information (OSTI)

    lasers with linewidth less than 1 nm. In the initial stages of PEC etching, when the thin film is flat, characteristic voltammogram shapes are observed. At low...

  18. Thin-film lithium batteries highlighted at OSTI | OSTI, US Dept...

    Office of Scientific and Technical Information (OSTI)

    The Department of Energy's Oak Ridge National Laboratory (ORNL) has developed just such a high-performance thin-film lithium battery for a variety of technological applications. ...

  19. Thin-Film Fiber Optic Sensors for Power Control and Fault Detection. Final Report

    SciTech Connect

    Duncan, Paul Grems

    2003-09-30

    Described is the development of an optical current measurement device, an active power conditioning system, and sol gel type thin films for the detection of magnetic fields.

  20. Electrochromism vs. the Bugs:DevelopingWO3 Thin Film Windows...

    Office of Scientific and Technical Information (OSTI)

    Title: Electrochromism vs. the Bugs:DevelopingWO3 Thin Film Windows toControl Photoactive Biological Systems. Abstract not provided. Authors: Small, Leo J ; Spoerke, Erik David ; ...

  1. Effects of aging on the characteristics of TiNiPd shape memory alloy thin films

    SciTech Connect

    Zhang Congchun

    2008-07-15

    TiNiPd thin films have been deposited on glass substrate using R.F. magnetron sputtering. Effects of annealing and aging on the microstructure, phase transformation behaviors and shape memory effects of these thin films have been studied by X-ray diffractometry, differential scanning calorimeter, tensile tests and internal friction characteristics. The TiNiPd thin films annealed at 750 deg. C exhibit uniform martensite/austenite transformations and shape memory effect. Aging at 450 deg. C for 1 h improved the uniformity of transformations and shape memory effect. Long time aging decreased transformation temperatures and increased the brittleness of TiNiPd thin films.

  2. Studies on nickel-tungsten oxide thin films

    SciTech Connect

    Usha, K. S.; Sivakumar, R.; Sanjeeviraja, C.

    2014-10-15

    Nickel-Tungsten oxide (95:5) thin films were prepared by rf sputtering at 200W rf power with various substrate temperatures. X-ray diffraction study reveals the amorphous nature of films. The substrate temperature induced decrease in energy band gap with a maximum transmittance of 71%1 was observed. The Micro-Raman study shows broad peaks at 560 cm{sup −1} and 1100 cm{sup −1} correspond to Ni-O vibration and the peak at 860 cm{sup −1} can be assigned to the vibration of W-O-W bond. Photoluminescence spectra show two peaks centered on 420 nm and 485 nm corresponding to the band edge emission and vacancies created due to the addition of tungsten, respectively.

  3. Techniques for producing free-standing thin films on frames

    SciTech Connect

    Aubert, J.H.; McNamara, W.F.

    1993-09-01

    The procedures of vapor-deposition polymerization, spin coating and orientation-dependent etching have been employed to make free-standing thin films of Parylene-N, Parylene-D, polystyrene, polycarbonate and perfluoro-dimethyl-dioxole/tetrafluoroethylene copolymer (Teflon{reg_sign} AF-1600). The polymeric materials were vapor-deposited or spin-coated onto substrates of polished single-crystal silicon (wafers) and removed on frames of various shapes and sizes after application of adhesive and an etching process using potassium hydroxide. Thicknesses range from 2000{Angstrom} to 12000{Angstrom}.

  4. Preparation of thin ceramic films via an aqueous solution route

    DOEpatents

    Pederson, Larry R.; Chick, Lawrence A.; Exarhos, Gregory J.

    1989-01-01

    A new chemical method of forming thin ceramic films has been developed. An aqueous solution of metal nitrates or other soluble metal salts and a low molecular weight amino acid is coated onto a substrate and pyrolyzed. The amino acid serves to prevent precipitation of individual solution components, forming a very viscous, glass-like material as excess water is evaporated. Using metal nitrates and glycine, the method has been demonstrated for zirconia with various levels of yttria stabilization, for lanthanum-strontium chromites, and for yttrium-barium-copper oxide superconductors on various substrates.

  5. Thin film superconductors and process for making same

    DOEpatents

    Nigrey, P.J.

    1988-01-21

    A process for the preparation of oxide superconductors from high-viscosity non-aqueous solution is described. Solutions of lanthanide nitrates, alkaline earth nitrates and copper nitrates in a 1:2:3 stoichiometric ratio, when added to ethylene glycol containing citric acid solutions, have been used to prepare highly viscous non-aqueous solutions of metal mixed nitrates-citrates. Thin films of these compositions are produced when a layer of the viscous solution is formed on a substrate and subjected to thermal decomposition.

  6. Thin film solar cell including a spatially modulated intrinsic layer

    SciTech Connect

    Guha, Subhendu; Yang, Chi-Chung; Ovshinsky, Stanford R.

    1989-03-28

    One or more thin film solar cells in which the intrinsic layer of substantially amorphous semiconductor alloy material thereof includes at least a first band gap portion and a narrower band gap portion. The band gap of the intrinsic layer is spatially graded through a portion of the bulk thickness, said graded portion including a region removed from the intrinsic layer-dopant layer interfaces. The band gap of the intrinsic layer is always less than the band gap of the doped layers. The gradation of the intrinsic layer is effected such that the open circuit voltage and/or the fill factor of the one or plural solar cell structure is enhanced.

  7. Apparatus and method for the determination of grain size in thin films

    DOEpatents

    Maris, Humphrey J

    2001-01-01

    A method for the determination of grain size in a thin film sample comprising the steps of measuring first and second changes in the optical response of the thin film, comparing the first and second changes to find the attenuation of a propagating disturbance in the film and associating the attenuation of the disturbance to the grain size of the film. The second change in optical response is time delayed from the first change in optical response.

  8. Apparatus and method for the determination of grain size in thin films

    DOEpatents

    Maris, Humphrey J

    2000-01-01

    A method for the determination of grain size in a thin film sample comprising the steps of measuring first and second changes in the optical response of the thin film, comparing the first and second changes to find the attenuation of a propagating disturbance in the film and associating the attenuation of the disturbance to the grain size of the film. The second change in optical response is time delayed from the first change in optical response.

  9. Chemical stability of highly (0001) textured Sm(CoCu){sub 5} thin films with a thin Ta capping layer

    SciTech Connect

    Zhao Haibao; Wang Hao; Liu Xiaoqi; Wang Jianping; Zhang Tao

    2011-04-01

    With the highest magnetocrystalline anisotropy constant (Ku) among practical magnetic materials, SmCo{sub 5} could be a very attractive candidate for future high areal density magnetic recording. However, its corrosion resistance is always a concern in recording media applications. In this paper, the chemical stability and microstructures of highly (0001) textured Sm(CoCu){sub 5} thin films with and without a 3 nm Ta capping layer were reported. For Sm(CoCu){sub 5} thin films without a capping layer, the coercivity decreases significantly (from 8kOe to 1kOe) within one month. Sm(CoCu){sub 5} thin films capped with a thin Ta layer (3 nm) behave differently. Even exposed to a laboratory environment (25 deg. C) over 3 years, the Ta-capped Sm(CoCu){sub 5} thin films are stable in terms of structural and magnetic properties, i.e., there were no changes in X-ray diffraction peaks and vibrating sample magnetometer hysteresis loops. Microstructure of Ta-capped Sm(CoCu){sub 5} thin films showed that Sm(CoCu){sub 5} formed a domelike particle assembly structure on a smooth Ru underlayer and were well covered by partially oxidized Ta capping layer, as shown by TEM cross-section micrographs. Accelerated corrosion treatment (130 deg. C, 95% relative humidity, 6 h) was performed on Ta-capped Sm(CoCu){sub 5} thin films. X-ray photoelectron spectroscopy (XPS) results showed that no Co was detected on the sample surface before the corrosion treatment, but strong XPS signals of CoOx and Co(OH)x were observed after treatment. Therefore, none of our Sm(CoCu){sub 5} thin films can pass the accelerated corrosion test. Hcp-phased CoPt-alloys are proposed as better capping materials for Sm(CoCu){sub 5} thin films in future high-density magnetic recording applications.

  10. Hydrogen adsorption in thin films of Prussian blue analogue

    SciTech Connect

    Yang, Dali [Los Alamos National Laboratory; Ding, Vivian [Los Alamos National Laboratory; Luo, Junhua [Los Alamos National Laboratory; Currier, Robert P [Los Alamos National Laboratory; Obrey, Steve [Los Alamos National Laboratory; Zhao, Yusheng [Los Alamos National Laboratory

    2008-01-01

    Quartz crystal microbalance with dissipation (QCM-D) measurement was used to investigate the kinetics of the molecular hydrogen adsorption into thin films of prussian blue analogues - Cu{sub 3}[Co(CN){sub 6}]{sub 2} at ambient conditions. Although the equilibrium adsorption seems to be independent of the thickness, the adsorption rate substantially decreases with the thickness of the films. In addition, the reversibility of H{sub 2} adsorption into the Cu{sub 3}[Co(CN){sub 6}]{sub 2} films was investigated. The results indicate that the Cu{sub 3}[Co(CN){sub 6}]{sub 2} maily interacts with H{sub 2} molecules physically. The highest H{sub 2} uptake by the Cu{sub 3}[Co(CN){sub 6}]{sub 2} films is obtained when the gas phase is stagnant inside the testing cell. However, the unusual high H{sub 2} uptake obtained from the QCM-D measurement makes us question how reliable this analytic methodology is.

  11. Thin dielectric film thickness determination by advanced transmission electron microscopy

    SciTech Connect

    Diebold, A.C.; Foran, B.; Kisielowski, C.; Muller, D.; Pennycook, S.; Principe, E.; Stemmer, S.

    2003-09-01

    High Resolution Transmission Electron Microscopy (HR-TEM) has been used as the ultimate method of thickness measurement for thin films. The appearance of phase contrast interference patterns in HR-TEM images has long been confused as the appearance of a crystal lattice by non-specialists. Relatively easy to interpret crystal lattice images are now directly observed with the introduction of annular dark field detectors for scanning TEM (STEM). With the recent development of reliable lattice image processing software that creates crystal structure images from phase contrast data, HR-TEM can also provide crystal lattice images. The resolution of both methods was steadily improved reaching now into the sub Angstrom region. Improvements in electron lens and image analysis software are increasing the spatial resolution of both methods. Optimum resolution for STEM requires that the probe beam be highly localized. In STEM, beam localization is enhanced by selection of the correct aperture. When STEM measurement is done using a highly localized probe beam, HR-TEM and STEM measurement of the thickness of silicon oxynitride films agree within experimental error. In this paper, the optimum conditions for HR-TEM and STEM measurement are discussed along with a method for repeatable film thickness determination. The impact of sample thickness is also discussed. The key result in this paper is the proposal of a reproducible method for film thickness determination.

  12. Silicon-integrated thin-film structure for electro-optic applications

    DOEpatents

    McKee, Rodney A.; Walker, Frederick Joseph

    2000-01-01

    A crystalline thin-film structure suited for use in any of an number of electro-optic applications, such as a phase modulator or a component of an interferometer, includes a semiconductor substrate of silicon and a ferroelectric, optically-clear thin film of the perovskite BaTiO.sub.3 overlying the surface of the silicon substrate. The BaTiO.sub.3 thin film is characterized in that substantially all of the dipole moments associated with the ferroelectric film are arranged substantially parallel to the surface of the substrate to enhance the electro-optic qualities of the film.

  13. Guided Self-Assembly of Gold Thin Films

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    including optical lenses and polarizers, memory storage, nanoelectronic circuits, photovoltaics, and batteries. Through a relatively easy and inexpensive technique where...

  14. Photovoltaic cell

    DOEpatents

    Gordon, Roy G.; Kurtz, Sarah

    1984-11-27

    In a photovoltaic cell structure containing a visibly transparent, electrically conductive first layer of metal oxide, and a light-absorbing semiconductive photovoltaic second layer, the improvement comprising a thin layer of transition metal nitride, carbide or boride interposed between said first and second layers.

  15. Impact of magnetron configuration on plasma and film properties of sputtered aluminum nitride thin films

    SciTech Connect

    Duquenne, C.; Tessier, P. Y.; Besland, M. P.; Angleraud, B.; Jouan, P. Y.; Djouadi, M. A.; Aubry, R.; Delage, S.

    2008-09-15

    We have investigated the growth of the c-axis oriented aluminum nitride (AlN) thin films on (100) silicon by reactive dc magnetron sputtering at low temperature, considering the effect of the magnet configuration on plasma and film properties. It appears that a magnet modification can significantly modify both the plasma characteristics and the film properties. Electrical and optical characterizations of the plasma phase highlight that depending on the magnet configuration, two very different types of deposition process can be involved in the same deposition chamber. On the one hand, with a balanced magnetron (type 1), the deposition process enhances the production of AlN dimers in the plasma phase and enables to synthesize AlN films with different preferential orientations (100, 002, and even 101). On the other hand, a strongly unbalanced magnetron (type 2) provides a limited production of AlN species in the plasma phase and a strong increase in the ratio of ions to metal atom flux on the growing films. In the latter case, the ion energy provided by the ion flux to the growing film is typically in the 20-30 eV range. Thus, dense (002) oriented films with high crystalline quality are obtained without any substrate heating.

  16. Development of Thin Film Silicon Solar Cell Using Inkjet Printed Silicon and Other Inkjet Processes: Cooperative Research and Development Final Report, CRADA Number CRD-07-260

    SciTech Connect

    Sopori, B.

    2012-04-01

    The cost of silicon photovoltaics (Si-PV) can be greatly lowered by developing thin-film crystalline Si solar cells on glass or an equally lower cost substrate. Typically, Si film is deposited by thermal evaporation, plasma enhanced chemical vapor deposition, and sputtering. NREL and Silexos have worked under a CRADA to develop technology to make very low cost solar cells using liquid organic precursors. Typically, cyclopentasilane (CPS) is deposited on a glass substrate and then converted into an a-Si film by UV polymerization followed by low-temperature optical process that crystallizes the amorphous layer. This technique promises to be a very low cost approach for making a Si film.

  17. Soldering of Thin Film-Metallized Glass Substrates

    SciTech Connect

    Hosking, F.M.; Hernandez, C.L.; Glass, S.J.

    1999-03-31

    The ability to produce reliable electrical and structural interconnections between glass and metals by soldering was investigated. Soldering generally requires premetallization of the glass. As a solderable surface finish over soda-lime-silicate glass, two thin films coatings, Cr-Pd-Au and NiCr-Sn, were evaluated. Solder nettability and joint strengths were determined. Test samples were processed with Sn60-Pb40 solder alloy at a reflow temperature of 210 C. Glass-to-cold rolled steel single lap samples yielded an average shear strength of 12 MPa. Solder fill was good. Control of the Au thickness was critical in minimizing the formation of AuSn{sub 4} intermetallic in the joint, with a resulting joint shear strength of 15 MPa. Similar glass-to-glass specimens with the Cr-Pd-Au finish failed at 16.5 MPa. The NiCr-Sn thin film gave even higher shear strengths of 20-22.5 MPa, with failures primarily in the glass.

  18. Method of lift-off patterning thin films in situ employing phase change resists

    DOEpatents

    Bahlke, Matthias Erhard; Baldo, Marc A; Mendoza, Hiroshi Antonio

    2014-09-23

    Method for making a patterned thin film of an organic semiconductor. The method includes condensing a resist gas into a solid film onto a substrate cooled to a temperature below the condensation point of the resist gas. The condensed solid film is heated selectively with a patterned stamp to cause local direct sublimation from solid to vapor of selected portions of the solid film thereby creating a patterned resist film. An organic semiconductor film is coated on the patterned resist film and the patterned resist film is heated to cause it to sublime away and to lift off because of the phase change.

  19. Dissociation of dilute immiscible copper alloy thin films

    SciTech Connect

    Barmak, K.; Lucadamo, G. A.; Cabral, C. Jr.; Lavoie, C.; Harper, J. M. E.

    2000-03-01

    The dissociation behavior of dilute, immiscible Cu-alloy thin films is found to fall into three broad categories that correlate most closely with the form of the Cu-rich end of the binary alloy phase diagrams. Available thermodynamic and tracer diffusion data shed further light on alloy behavior. Eight alloying elements were selected for these studies, with five elements from groups 5 and 6, two from group 8, and one from group 11 of the periodic table. They are respectively V, Nb, Ta, Cr, Mo, Fe, Ru, and Ag. The progress of precipitation in approximately 500-nm-thick alloy films, containing 2.5-3.8 at. % solute, was followed with in situ resistance and stress measurements as well as with in situ synchrotron x-ray diffraction. In addition, texture analysis and transmission electron microscopy were used to investigate the evolution of microstructure and texture of Cu(Ta) and Cu(Ag). For all eight alloys, dissociation occurred upon heating, with the rejection of solute and evolution of microstructure often occurring in multiple steps that range over several hundred degrees between approximately 100 and 900 degree sign C. However, in most cases, substantial reductions in resistivity of the films took place below 400 degree sign C, at temperatures of interest to copper metallization schemes for silicon chip technology. (c) 2000 American Institute of Physics.

  20. Fully Integrated Applications of Thin Films on Low Temperature Cofired Ceramic (LTCC)

    SciTech Connect

    Ambrose Wolf; Ken Peterson; Matt O'Keefe; Wayne Huebner; Bill Kuhn

    2012-04-19

    Thin film multilayers have previously been introduced on multilayer low temperature cofired ceramic (LTCC), as well as initial thin film capacitors on LTCC. The ruggedness of a multipurpose Ti-Cu-Pt-Au stack for connectivity and RF conductivity has continued to benefit fabrication and reliability in state of-the-art modules, while the capacitors have followed the traditional Metal-Insulator-Metal (MIM) style. The full integration of thin film passives with thin film connectivity traces is presented. Certain passives, such as capacitors, require specifically tailored and separately patterned thin film (multi-)layers, including a dielectric. Different capacitance values are achieved by variation of both the insulator layer thickness and the active area of the capacitor. Other passives, such as filters, require only the conductor - a single thin film multilayer. This can be patterned from the same connectivity thin film material (Ti-Cu-Pt-Au), or a specially tailored thin film material (e.g. Ti-Cu-Au) can be deposited. Both versions are described, including process and integration details. Examples are discussed, ranging from patterning for maximum tolerances, to space and performance-optimized designs. Cross-sectional issues associated with integration are also highlighted in the discussion.

  1. Organic thin film devices with stabilized threshold voltage and mobility, and method for preparing the devices

    DOEpatents

    Nastasi, Michael Anthony; Wang, Yongqiang; Fraboni, Beatrice; Cosseddu, Piero; Bonfiglio, Annalisa

    2013-06-11

    Organic thin film devices that included an organic thin film subjected to a selected dose of a selected energy of ions exhibited a stabilized mobility (.mu.) and threshold voltage (VT), a decrease in contact resistance R.sub.C, and an extended operational lifetime that did not degrade after 2000 hours of operation in the air.

  2. High-field magnets using high-critical-temperature superconducting thin films

    DOEpatents

    Mitlitsky, F.; Hoard, R.W.

    1994-05-10

    High-field magnets fabricated from high-critical-temperature superconducting ceramic (HTSC) thin films which can generate fields greater than 4 Tesla are disclosed. The high-field magnets are made of stackable disk-shaped substrates coated with HTSC thin films, and involves maximizing the critical current density, superconducting film thickness, number of superconducting layers per substrate, substrate diameter, and number of substrates while minimizing substrate thickness. The HTSC thin films are deposited on one or both sides of the substrates in a spiral configuration with variable line widths to increase the field. 4 figures.

  3. High-field magnets using high-critical-temperature superconducting thin films

    DOEpatents

    Mitlitsky, Fred; Hoard, Ronald W.

    1994-01-01

    High-field magnets fabricated from high-critical-temperature superconducting ceramic (HTSC) thin films which can generate fields greater than 4 Tesla. The high-field magnets are made of stackable disk-shaped substrates coated with HTSC thin films, and involves maximizing the critical current density, superconducting film thickness, number of superconducting layers per substrate, substrate diameter, and number of substrates while minimizing substrate thickness. The HTSC thin films are deposited on one or both sides of the substrates in a spiral configuration with variable line widths to increase the field.

  4. Thermal generation of spin current in epitaxial CoFe2O4 thin films (Journal

    Office of Scientific and Technical Information (OSTI)

    Article) | SciTech Connect Thermal generation of spin current in epitaxial CoFe2O4 thin films Citation Details In-Document Search This content will become publicly available on January 12, 2017 Title: Thermal generation of spin current in epitaxial CoFe2O4 thin films The longitudinal spin Seebeck effect (LSSE) has been investigated in high-quality epitaxial CoFe2O4 (CFO) thin films. The thermally excited spin currents in the CFO films are electrically detected in adjacent Pt layers due to

  5. Dynamics of photoexcited carrier relaxation and recombination in CdTe/CdS thin films

    SciTech Connect

    Levi, D.H.; Fluegel, B.D.; Ahrenkiel, R.K.

    1996-05-01

    Efficiency-limiting defects in photovoltaic devices are readily probed by time-resolved spectroscopy. This paper presents the first direct optical measurements of the relaxation and recombination pathways of photoexcited carriers in the CdS window layer of CdTe/CdS polycrystalline thin films. Femtosecond time-resolved pump/probe measurements indicate the possible existence of a two-phase CdS/CdSTe layer, rather than a continuously graded alloy layer at the CdTe/CdS interface. Complementary time-resolved photoluminescence (PL) measurements show that the photoexcited carriers are rapidly captured by deep-level defects. The temporal and density-dependent properties of the photoluminescence prove that the large Stokes shift of the PL relative to the band edge is due to strong phonon coupling to deep-level defects in CdS. The authors suggest that modifications in the CdS processing may enhance carrier collection efficiency in the blue spectral region.

  6. Steering and Separating Excitons in Organic Thin Films and Devices...

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    to developing an understanding of the mechanism of photocurrent and photovoltage generation in organic photovoltaic devices (OPVs) and electroluminescence in organic LEDs (OLEDs). ...

  7. Apparatus and Process for the Mass Production of Photovoltaic Modules -

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Energy Innovation Portal Apparatus and Process for the Mass Production of Photovoltaic Modules Colorado State University Contact CSU About This Technology Technology Marketing Summary A high throughput thin film device manufacturing process that produces stable, high efficiency devices and, at the same time, limits environmental and occupational exposure to toxic compounds. Description This innovation is a high throughput thin film device manufacturing process that produces stable, high

  8. Silicon Materials and Devices R&D | Photovoltaic Research | NREL

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Materials and Devices R&D The National Center for Photovoltaics (NCPV) at NREL has world-leading research capabilities and expertise in silicon (Si) materials and devices, especially for photovoltaic (PV) cell applications. PV Research Other Materials & Devices pages: High-Efficiency Crystalline PV Polycrystalline Thin-Film PV Perovskite and Organic PV Advanced PV Materials Science Chemistry & Nanoscience National Center for Photovoltaics Materials and Chemical Science and Technology

  9. The electron beam hole drilling of silicon nitride thin films

    SciTech Connect

    Howitt, D. G.; Chen, S. J.; Gierhart, B. C.; Smith, R. L.; Collins, S. D.

    2008-01-15

    The mechanism by which an intense electron beam can produce holes in thin films of silicon nitride has been investigated using a combination of in situ electron energy loss spectrometry and electron microscopy imaging. A brief review of electron beam interactions that lead to material loss in different materials is also presented. The loss of nitrogen and silicon decreases with decreasing beam energy and although still observable at a beam energy of 150 keV ceases completely at 120 keV. The linear behavior of the loss rate coupled with the energy dependency indicates that the process is primarily one of direct displacement, involving the sputtering of atoms from the back surface of the specimen with the rate controlling mechanism being the loss of nitrogen.

  10. Optical limiting effects in nanostructured silicon carbide thin films

    SciTech Connect

    Borshch, A A; Starkov, V N; Volkov, V I; Rudenko, V I; Boyarchuk, A Yu; Semenov, A V

    2013-12-31

    We present the results of experiments on the interaction of nanosecond laser radiation at 532 and 1064 nm with nanostructured silicon carbide thin films of different polytypes. We have found the effect of optical intensity limiting at both wavelengths. The intensity of optical limiting at λ = 532 nm (I{sub cl} ∼ 10{sup 6} W cm{sup -2}) is shown to be an order of magnitude less than that at λ = 1064 nm (I{sub cl} ∼ 10{sup 7} W cm{sup -2}). We discuss the nature of the nonlinearity, leading to the optical limiting effect. We have proposed a method for determining the amount of linear and two-photon absorption in material media. (nonlinear optical phenomena)

  11. Origin of superstructures in (double) perovskite thin films

    SciTech Connect

    Shabadi, V. Major, M.; Komissinskiy, P.; Vafaee, M.; Radetinac, A.; Baghaie Yazdi, M.; Donner, W.; Alff, L.

    2014-09-21

    We have investigated the origin of superstructure peaks as observed by X-ray diffraction of multiferroic Bi(Fe{sub 0.5}Cr{sub 0.5})O{sub 3} thin films grown by pulsed laser deposition on single crystal SrTiO{sub 3} substrates. The photon energy dependence of the contrast between the atomic scattering factors of Fe and Cr is used to rule out a chemically ordered double perovskite Bi{sub 2}FeCrO{sub 6} (BFCO). Structural calculations suggest that the experimentally observed superstructure occurs due to unequal cation displacements along the pseudo-cubic [111] direction that mimic the unit cell of the chemically ordered compound. This result helps to clarify discrepancies in the correlations of structural and magnetic order reported for Bi{sub 2}FeCrO{sub 6}. The observation of a superstructure in itself is not a sufficient proof of chemical order in double perovskites.

  12. Method for making thick and/or thin film

    DOEpatents

    Pham, Ai Quoc; Glass, Robert S.

    2004-11-02

    A method to make thick or thin films a very low cost. The method is generally similar to the conventional tape casting techniques while being more flexible and versatile. The invention involves preparing a slip (solution) of desired material and including solvents such as ethanol and an appropriate dispersant to prevent agglomeration. The slip is then sprayed on a substrate to be coated using an atomizer which spreads the slip in a fine mist. Upon hitting the substrate, the solvent evaporates, leaving a green tape containing the powder and other additives, whereafter the tape may be punctured, cut, and heated for the desired application. The tape thickness can vary from about 1 .mu.m upward.

  13. Ultra-high current density thin-film Si diode

    DOEpatents

    Wang; Qi

    2008-04-22

    A combination of a thin-film .mu.c-Si and a-Si:H containing diode structure characterized by an ultra-high current density that exceeds 1000 A/cm.sup.2, comprising: a substrate; a bottom metal layer disposed on the substrate; an n-layer of .mu.c-Si deposited the bottom metal layer; an i-layer of .mu.c-Si deposited on the n-layer; a buffer layer of a-Si:H deposited on the i-layer, a p-layer of .mu.c-Si deposited on the buffer layer; and a top metal layer deposited on the p-layer.

  14. Surfaces and thin films studied by picosecond ultrasonics

    SciTech Connect

    Maris, J.H.; Tauc, J.

    1992-05-01

    This research is the study of thin films and interfaces via the use of the picosecond ultrasonic technique. In these experiments ultrasonic waves are excited in a structure by means of a picosecond light pulse ( pump pulse''). The propagation of these waves is detected through the use of a probe light pulse that is time-delayed relative to the pump. This probe pulse measures the change {Delta}R(t) in the optical reflectivity of the structure that occurs because the ultrasonic wave changes the optical properties of the structure. This technique make possible the study of the attenuation and velocity of ultrasonic waves up to much higher frequencies than was previously possible (up to least 500 GHz). In addition, the excellent time-resolution of the method makes it possible to study nanostructures of linear dimensions down to 100 {Angstrom} or less by ultrasonic pulse-echo techniques. 25 refs.

  15. Manipulating Josephson junctions in thin-films by nearby vortices

    SciTech Connect

    Kogan, V G; Mints, R G

    2014-07-01

    It is shown that a vortex trapped in one of the banks of a planar edge-type Josephson junction in a narrow thin-film superconducting strip can change drastically the dependence of the junction critical current on the applied field, I-c(H). When the vortex is placed at certain discrete positions in the strip middle, the pattern I-c(H) has zero at H = 0 instead of the traditional maximum of '0-type' junctions. The number of these positions is equal to the number of vortices trapped at the same location. When the junction-vortex separation exceeds similar to W, the strip width, I-c(H) is no longer sensitive to the vortex presence. The same is true for any separation if the vortex approaches the strip edges. (C) 2014 Elsevier B.V. All rights reserved.

  16. Room-temperature magnetoelectric multiferroic thin films and applications thereof

    DOEpatents

    Katiyar, Ram S; Kuman, Ashok; Scott, James F.

    2014-08-12

    The invention provides a novel class of room-temperature, single-phase, magnetoelectric multiferroic (PbFe.sub.0.67W.sub.0.33O.sub.3).sub.x (PbZr.sub.0.53Ti.sub.0.47O.sub.3).sub.1-x (0.2.ltoreq.x.ltoreq.0.8) (PFW.sub.x-PZT.sub.1-x) thin films that exhibit high dielectric constants, high polarization, weak saturation magnetization, broad dielectric temperature peak, high-frequency dispersion, low dielectric loss and low leakage current. These properties render them to be suitable candidates for room-temperature multiferroic devices. Methods of preparation are also provided.

  17. Ultralight photovoltaic modules for unmanned aerial vehicles

    SciTech Connect

    Nowlan, M.J.; Maglitta, J.C.; Darkazalli, G.; Lamp, T.

    1997-12-31

    New lightweight photovoltaic modules are being developed for powering high altitude unmanned aerial vehicles (UAVs). Modified low-cost terrestrial solar cell and module technologies are being applied to minimize vehicle cost. New processes were developed for assembling thin solar cells, encapsulant films, and cover films. An innovative by-pass diode mounting approach that uses a solar cell as a heat spreader was devised and tested. Materials and processes will be evaluated through accelerated environmental testing.

  18. Fabrication of ionic liquid electrodeposited Cu--Sn--Zn--S--Se thin films and method of making

    DOEpatents

    Bhattacharya, Raghu Nath

    2016-01-12

    A semiconductor thin-film and method for producing a semiconductor thin-films comprising a metallic salt, an ionic compound in a non-aqueous solution mixed with a solvent and processing the stacked layer in chalcogen that results in a CZTS/CZTSS thin films that may be deposited on a substrate is disclosed.

  19. Modulated IR radiometry for determining thermal properties and basic characteristics of titanium thin films

    SciTech Connect

    Apreutesei, Mihai; Lopes, Claudia; Vaz, Filipe; Macedo, Francisco; Borges, Joel

    2014-07-01

    Titanium thin films of different thicknesses were prepared by direct current magnetron sputtering to study modulated infrared (IR) radiometry as a tool for analyzing film thickness. Thickness was varied by regularly increasing the deposition time, keeping all the other deposition parameters constant. The influence of film thickness on morphological, structural, and electrical properties of the titanium coatings also was investigated. The experimental results revealed a systematic grain growth with increasing film thickness, along with enhanced film crystallinity, which led to increased electrical conductivity. Using the results obtained by modulated IR radiometry, the thickness of each thin film was calculated. These thickness values were then compared with the coating thickness measurements obtained by scanning electron microscopy. The values confirmed the reliability of modulated IR radiometry as an analysis tool for thin films and coatings, and for determining thicknesses in the micrometer range, in particular.

  20. Round robin analyses of hydrogen isotope thin films standards.

    SciTech Connect

    Browning, James Frederick; Doyle, Barney Lee; Wampler, William R.; Wetteland, C. J.; LaDuca, Carol A.; Banks, James Clifford; Wang, Y. Q.; Tesmer, Joseph R.

    2003-06-01

    Hydrogen isotope thin film standards have been manufactured at Sandia National Laboratories for use by the materials characterization community. Several considerations were taken into account during the manufacture of the ErHD standards, with accuracy and stability being the most important. The standards were fabricated by e-beam deposition of Er onto a Mo substrate and the film stoichiometrically loaded with hydrogen and deuterium. To determine the loading accuracy of the standards two random samples were measured by thermal desorption mass spectrometry and atomic absorption spectrometry techniques with a stated combined accuracy of {approx}1.6% (1{sigma}). All the standards were then measured by high energy RBS/ERD and RBS/NRA with the accuracy of the techniques {approx}5% (1{sigma}). The standards were then distributed to the IBA materials characterization community for analysis. This paper will discuss the suitability of the standards for use by the IBA community and compare measurement results to highlight the accuracy of the techniques used.