National Library of Energy BETA

Sample records for te hoback iii

  1. Te

    Energy Information Administration (EIA) (indexed site)

    Í l e d u E l l e s m e r e N e w f o u n d l a n d a n d L a b r a d o r Te r r e - N e u v e - e t - L a b r a d o r 22 A l a s k a N u n a v u t O n t a r i o A l b e r t a Te x a s N o r t h w e s t Te r r i t o r i e s M a n i t o b a B r i t i s h C o l u m b i a S a s k a t c h e w a n Y u k o n M o n t a n a U t a h I d a h o C a l i f o r n i a N e v a d a O r e g o n A r i z o n a I o w a K a n s a s C o l o r a d o W y o m i n g S o n o r a N e w M e x i c o M i n n e s o t a N e b r

  2. Te

    Energy Information Administration (EIA) (indexed site)

    N u n a v u t O n t a r i o A l b e r t a Te x a s N o r t h w e s t Te r r i t o r i e s M a n i t o b a B r i t i s h C o l u m b i a S a s k a t c h e w a n Y u k o n M o n t a n a U t a h I d a h o C a l i f o r n i a N e v a d a O r e g o n A r i z o n a I o w a K a n s a s C o l o r a d o W y o m i n g S o n o r a N e w M e x i c o M i n n e s o t a N e b r a s k a O h i o C h i h u a h u a I l l i n o i s M i s s o u r i F l o r i d a G e o r g i a O k l a h o m a W a s h i n g t o n S o

  3. Te

    Energy Information Administration (EIA) (indexed site)

    A l a s k a N u n a v u t O n t a r i o A l b e r t a Te x a s N o r t h w e s t Te r r i t o r i e s M a n i t o b a B r i t i s h C o l u m b i a S a s k a t c h e w a n Y u k o n M o n t a n a U t a h I d a h o C a l i f o r n i a N e v a d a O r e g o n A r i z o n a I o w a K a n s a s C o l o r a d o W y o m i n g S o n o r a N e w M e x i c o M i n n e s o t a N e b r a s k a O h i o C h i h u a h u a I l l i n o i s M i s s o u r i F l o r i d a G e o r g i a O k l a h o m a W a s h i n

  4. Te

    Energy Information Administration (EIA) (indexed site)

    D u N o r d - O u e s t Te r r e - N e u v e - e t - L a b r a d o r Q u é b e c Í l e - d u - P r i n c e - É d o u a r d N o u v e l l e - É c o s s e N o u v e a u - B r u n s w i c k C o l o m b i e - B r i t a n n i q u e B a f f i n I s l a n d Í l e d u B a f f i n E l l e s m e r e I s l a n d Í l e d u E l l e s m e r e V i c t o r i a I s l a n d Í l e d u V i c t o r i a N e w f o u n d l a n d a n d L a b r a d o r Te r r e - N e u v e - e t - L a b r a d o r A l a s k a N u n

  5. Search for type-III seesaw heavy leptons in pp collisions at s=8 TeVwith the ATLAS detector

    DOE PAGES [OSTI]

    Aad, G.; Abbott, B.; Abdallah, J.; Abdinov, O.; Aben, R.; Abolins, M.; AbouZeid, O. S.; Abramowicz, H.; Abreu, H.; Abreu, R.; et al

    2015-08-03

    A search for the pair production of heavy leptons (N⁰,L±) predicted by the type-III seesaw theory formulated to explain the origin of small neutrino masses is presented. The decay channels N⁰→W±l∓ (ℓ=e,μ,τ) and L±→W±ν (ν=νe,νμ,ντ) are considered. The analysis is performed using the final state that contains two leptons (electrons or muons), two jets from a hadronically decaying W boson and large missing transverse momentum. The data used in the measurement correspond to an integrated luminosity of 20.3 fb⁻¹ of pp collisions at s√=8 TeV collected by the ATLAS detector at the LHC. No evidence of heavy lepton pair productionmore » is observed. Heavy leptons with masses below 325–540 GeV are excluded at the 95% confidence level, depending on the theoretical scenario considered.« less

  6. 125Te NMR chemical-shift trends in PbTeGeTe and PbTeSnTe alloys

    SciTech Connect

    Njegic, Bosiljka; Levin, Evgenii M.; Schmidt-Rohr, Klaus

    2013-10-08

    Complex tellurides, such as doped PbTe, GeTe, and their alloys, are among the best thermoelectric materials. Knowledge of the change in 125Te NMR chemical shift due to bonding to dopant or solute atoms is useful for determination of phase composition, peak assignment, and analysis of local bonding. We have measured the 125Te NMR chemical shifts in PbTe-based alloys, Pb1?xGexTe and Pb1?xSnxTe, which have a rocksalt-like structure, and analyzed their trends. For low x, several peaks are resolved in the 22-kHz MAS 125Te NMR spectra. A simple linear trend in chemical shifts with the number of Pb neighbors is observed. No evidence of a proposed ferroelectric displacement of Ge atoms in a cubic PbTe matrix is detected at low Ge concentrations. The observed chemical shift trends are compared with the results of DFT calculations, which confirm the linear dependence on the composition of the first-neighbor shell. The data enable determination of the composition of various phases in multiphase telluride materials. They also provide estimates of the 125Te chemical shifts of GeTe and SnTe (+970 and +400150 ppm, respectively, from PbTe), which are otherwise difficult to access due to Knight shifts of many hundreds of ppm in neat GeTe and SnTe.

  7. SECTION III

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    West Virginia Smart Grid Implementation Plan Revision 1 August 20, 2009 DOE/NETL-2009/1386 West Virginia Smart Grid Implementation Plan 20 August 2009 Revision 1 Submitted to: The Honorable Joe Manchin III, Governor, State of West Virginia Submitted by: West Virginia Division of Energy National Energy Technology Laboratory US DOE Office of Electricity Delivery and Energy Reliability Research and Development Solutions (RDS) Allegheny Power American Electric Power West Virginia University

  8. PART III

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Contract No. DE-AC02-09CH11466 Section J TOC i PART III List of Documents, Exhibits and Other Attachments Section J - List of Attachments Table of Contents Attachment No: Attachment: J.1 Appendix A - Advance Understandings on Human Resources J.2 Appendix B - Performance and Evaluation Measurement Plan J.3 Appendix C - Special Financial Institution Account Agreement J.4 Appendix D - Budget Program J.5 Appendix E - PPPL DOE (Lessee) Ingrants J.6 Appendix F - Contractor Resources, Commitments and

  9. Process Development for High Voc CdTe Solar Cells

    SciTech Connect

    Ferekides, C. S.; Morel, D. L.

    2011-05-01

    This is a cumulative and final report for Phases I, II and III of this NREL funded project (subcontract # XXL-5-44205-10). The main research activities of this project focused on the open-circuit voltage of the CdTe thin film solar cells. Although, thin film CdTe continues to be one of the leading materials for large-scale cost-effective production of photovoltaics, the efficiency of the CdTe solar cells have been stagnant for the last few years. This report describes and summarizes the results for this 3-year research project.

  10. Charge transfer and mobility enhancement at CdO/SnTe heterointerfaces

    SciTech Connect

    Nishitani, Junichi; Yu, Kin Man; Walukiewicz, Wladek

    2014-09-29

    We report a study of the effects of charge transfer on electrical properties of CdO/SnTe heterostructures. A series of structures with variable SnTe thicknesses were deposited by RF magnetron sputtering. Because of an extreme type III band offset with the valence band edge of SnTe located at 1.5?eV above the conduction band edge of CdO, a large charge transfer is expected at the interface of the CdO/SnTe heterostructure. The electrical properties of the heterostructures are analyzed using a multilayer charge transport model. The analysis indicates a large 4-fold enhancement of the CdO electron mobility at the interface with SnTe. The mobility enhancement is attributed to reduction of the charge center scattering through neutralization of the donor-like defects responsible for the Fermi level pinning at the CdO/SnTe interface.

  11. WCI-III

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    WCI-III Texas A&M University College Station, TX February 12-16, 2005 WCI-III Steering Committee Philippe Chomaz Francesca Gulminelli Joe Natowitz Sherry Yennello

  12. Level III Mentoring Requirement

    Office of Energy Efficiency and Renewable Energy (EERE)

    Level III applicants must be mentored (minimum of six months) by a Level III or IV FPD or demonstrate equivalency (see below Competency 3.12.2 in the PMCDP's CEG). A formal mentoring agreement must...

  13. SECTION III: NUCLEAR THEORY

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    III: NUCLEAR THEORY Astrophysical Factor for the Neutron Generator 13C(16O Reaction in the AGB Stars ......

  14. SECTION III: NUCLEAR THEORY

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Superallowed fermi beta decay: the accuracy of the phase-space integral ......................................III-1 I. S. Towner and J. C. Hardy The evaluation of V ud , experiment and theory ....................................................................................III-3 I. S. Towner and J. C. Hardy Asymptotic wavefunction for three charged particles in the continuum .........................................III-6 A. M. Mukhamedzhanov, F. Pirlepesov, A. Kadyrov Asymptotic normalization

  15. SECTION III: NUCLEAR THEORY

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    III: NUCLEAR THEORY Astrophysical Factor for the Neutron Generator 13C(α16O Reaction in the AGB Stars ................................................................................III-1 A.M. Mukhamedzhanov, V.Z. Goldberg, G. Rogachev, E. Johnson, S. Brown, K. Kemper, A. Momotyuk, and B. Roeder The Trojan Horse Method: an Indirect Technique in Nuclear Astrophysics ......................................................................................................III-3 A.M. Mukhamedzhanov,

  16. Ashtabula III | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    III Jump to: navigation, search Name Ashtabula III Facility Ashtabula III Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Developer NextEra Energy...

  17. SECTION III: NUCLEAR THEORY

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Heavy quark three-body collisional energy loss in quark-gluon plasma................................ III-1 C. M. Ko and Wei Liu Elliptic flow of deuterons in relativistic heavy ion collisions.................................................... III-2 Y. Oh and C.M. Ko Equation of state of the hot dense matter in a multiphase transport model............................ III-3 B. Zhang, L.W. Chen, and C.M. Ko Jet flavor conversions in a quark-gluon

  18. SECTION III: NUCLEAR THEORY

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    The nature of the low energy isovector dipole excitations in neutron rich nuclei................... III-1 E. Nica, D.C. Fuls, and S. Shlomo A modern nuclear energy density functional............................................................................ III-3 D. C. Fuls, V. K. Au, and S. Shlomo The Schiff moment and the isoscalar giant dipole resonance.................................................. III-5 N. Auerbach and S. Shlomo An improved calculation of the isospin-symmetry-breaking

  19. III-Nitride Nanowires

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Energy Frontier Research Centers: Solid-State Lighting Science Center for Frontiers of ... III-Nitride Nanowires HomeEnergy ResearchEFRCsSolid-State Lighting Science EFRC...

  20. SECTION III: NUCLEAR THEORY

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    the phase-space integral ...III-1 I. S. Towner and J. C. Hardy The evaluation of V ud , experiment and theory ......

  1. Neutron capture of /sup 122/Te, /sup 123/Te, /sup 124/Te, /sup 125/Te, and /sup 126/Te

    SciTech Connect

    Macklin, R.L.; Winters, R.R.

    1989-07-01

    Isotopically enriched samples of the tellurium isotopes from mass 122 to mass 126 were used to measure neutron capture in the energy range 2.6 keV to 600 keV at the Oak Ridge Electron Linear Accelerator pulsed neutron source. Starting at 2.6 keV, over 200 Breit-Wigner resonances for each isotope were used to describe the capture data. Least-squares adjustment gave parameters and their uncertainties for a total of 1659 resonances. Capture cross sections averaged over Maxwellian neutron distributions with temperatures ranging from kT = 5 keV to kT = 100 keV were derived for comparison with stellar nucleosynthesis calculations. For the three isotopes shielded from the astrophysical r-process, /sup 122/Te, /sup 123/Te and /sup 124/Te at kT = 30 keV the respective values were (280 /plus minus/ 10) mb, (819 /plus minus/ 30) mb and (154 /plus minus/ 6) mb. The corresponding products of cross section and solar system abundance are nearly equal in close agreement with s-process nucleosynthesis calculations. 26 refs., 8 figs., 10 tabs.

  2. TE Connectivity Finds Answers in Tomography

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    TE Connectivity Finds Answers in Tomography TE Connectivity Finds Answers in Tomography Print Thursday, 22 August 2013 10:50 TE Connectivity is a world leader in connectivity-the...

  3. John H. Hale III

    Energy.gov [DOE]

    John Hale III is the Director of the Office of Small and Disadvantaged Business Utilization at the Department of Energy, reporting directly to the Office of the Secretary. In this role, Hale...

  4. SECTION III: NUCLEAR THEORY

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Heavy quark three-body collisional energy loss in quark-gluon plasma...... III-1 C. M. Ko and Wei Liu Elliptic flow of deuterons in relativistic heavy ion ...

  5. Part III The President

    Energy.gov [DOE] (indexed site)

    III The President Executive Order 13653-Preparing the United States for the Impacts of Climate Change VerDate Mar<15>2010 17:41 Nov 05, 2013 Jkt 226001 PO 00000 Frm 00001 Fmt 4717...

  6. Fusion Power Demonstration III

    SciTech Connect

    Lee, J.D.

    1985-07-01

    This is the third in the series of reports covering the Fusion Power Demonstration (FPD) design study. This volume considers the FPD-III configuration that incorporates an octopole end plug. As compared with the quadrupole end-plugged designs of FPD-I and FPD-II, this octopole configuration reduces the number of end cell magnets and shortens the minimum ignition length of the central cell. The end-cell plasma length is also reduced, which in turn reduces the size and cost of the end cell magnets and shielding. As a contiuation in the series of documents covering the FPD, this report does not stand alone as a design description of FPD-III. Design details of FPD-III subsystems that do not differ significantly from those of the FPD-II configuration are not duplicated in this report.

  7. Optical phonons in PbTe/CdTe multilayer heterostructures

    SciTech Connect

    Novikova, N. N.; Yakovlev, V. A.; Kucherenko, I. V.; Karczewski, G.; Aleshchenko, Yu. A.; Muratov, A. V.; Zavaritskaya, T. N.; Melnik, N. N.

    2015-05-15

    The infrared reflection spectra of PbTe/CdTe multilayer nanostructures grown by molecular-beam epitaxy are measured in the frequency range of 20–5000 cm{sup −1} at room temperature. The thicknesses and high-frequency dielectric constants of the PbTe and CdTe layers and the frequencies of the transverse optical (TO) phonons in these structures are determined from dispersion analysis of the spectra. It is found that the samples under study are characterized by two TO phonon frequencies, equal to 28 and 47 cm{sup −1}. The first frequency is close to that of TO phonons in bulk PbTe, and the second is assigned to the optical mode in structurally distorted interface layers. The Raman-scattering spectra upon excitation with the radiation of an Ar{sup +} laser at 514.5 nm are measured at room and liquid-nitrogen temperatures. The weak line at 106 cm{sup −1} observed in these spectra is attributed to longitudinal optical phonons in the interface layers.

  8. George F. Smoot III

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    George F. Smoot III About the Lab Our Vision Lab Leadership History Nobelists Visit ⇒ Navigate Section About the Lab Our Vision Lab Leadership History Nobelists Visit smoot 2006 Nobel Prize for Physics * October 3, 2006 Press Conference (Video) * Bibliography of Dr. Smoot's Works * October 3, 2006 Press Conference (Video) The October 3, 2006 press conference at Berkeley Lab introducing its newest Nobel Prize winner, George Smoot, to a throng of visiting media is available for viewing online.

  9. Part III - Section J

    National Nuclear Security Administration (NNSA)

    Corporation Contract No. DE-AC04-94AL85000 Modification No. 585 Attachment 2 Page 1 of 5 Part III - Section J Appendix G List of Applicable Directives and NNSA Policy Letters In addition to the list of applicable directives referenced below, the contractor shall also comply with supplementary directives (e.g., manuals), which are invoked by a Contractor Requirements Document (CRD) attached to a directive referenced below. This List excludes directives that have been granted an exemption from the

  10. Part III - Section J

    National Nuclear Security Administration (NNSA)

    M280 Attachment 1 Page 1 of 5 Part III - Section J Appendix G List of Applicable Directives and NNSA Policy Letters In addition to the list of applicable directives referenced below, the contractor shall also comply with supplementary directives (e.g., manuals), which are invoked by a Contractor Requirements Document (CRD) attached to a directive referenced below. DIRECTIVE NUMBER DATE DOE DIRECTIVE TITLE APPH Chapter X Revision 10 09/08/98 Accounting Practices & Procedures Handbook Chapter

  11. Iii;.} An Ann

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Iii;.} An Ann otated Bibli ography of the Red - Coc kaded Woodpecker bv * Jerom e A. Jack son A Publi cati on of the Sava nnah River Plonl Notional En... ironmentol Research Pork PrOQ rom United Stales Dep ortment of Ene r gy An Annotated Bibliography of the Red-Cockaded Woodpecker, Picoides borealis Jerome A. Jackson Department of Biological Sciences Mississippi State University Mississippi State, Mississippi A Publication of the Savannah River National Environmental Research Park Prepared

  12. Plutonium (III) and uranium (III) nitrile complexes

    SciTech Connect

    Enriquez, A. E.; Matonic, J. H.; Scott, B. L.; Neu, M. P.

    2002-01-01

    Iodine oxidation of uranium and plutonium metals in tetrahydrofuran and pyridine form AnI{sub 3}(THF){sub 4} and AnI{sub 3}(py){sub 4} (An = Pu, U). These compounds represent convenient entries Into solution An(III) chemistry in organic solvents. Extensions of the actinide metal oxidation methodology in nitrile solvents by I{sub 2}, AgPF{sub 6}, and TIPF{sub 6} are presented here. Treatment of Pu{sup 0} in acetonitrile with iodine yields a putative PuI{sub 3}(NCMe){sub x} intermediate which can be trapped with the tripodal nitrogen donor ligand tpza (tpza = (tris[(2-pyrazinyl)methyl]amine)) and forms the eight-coordinate complex (tpza)PuI{sub 3}(NCMe). Treatment of excess U{sup 0} metal by iodine in acetonitrile afforded a brown crystalline mixed valence complex, [U(NCMe){sub 9}][UI{sub 6}][I], instead of UI{sub 3}(NCMe){sub 4}. The analogous reaction in bezonitrile forms red crystalline UI{sub 4}(NCPh){sub 4}. In contrast, treatment of UI{sub 3}(THF){sub 4} with excess acetonitrile cleanly generates [U(NCMe){sub 9}][I]{sub 3}. Oxidation of Pu{sup 0} by either TI(I) or Ag(I) hexafluorophosphate salts generates a nine-coordinate homoleptic acetonitrile adduct [Pu(NCMe){sub 9}][PF{sub 6}]{sub 3}. Attempts to oxidize U{sub 0} with these salts were unsuccessful.

  13. Windy Flats Phase III | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Phase III Jump to: navigation, search Name Windy Flats Phase III Facility Windy Flats Phase III Sector Wind energy Facility Type Commercial Scale Wind Facility Status Proposed...

  14. POPULATION III HYPERNOVAE

    SciTech Connect

    Smidt, Joseph; Whalen, Daniel J.; Wiggins, Brandon K.; Even, Wesley; Fryer, Chris L.; Johnson, Jarrett L.

    2014-12-20

    Population III supernovae have been of growing interest of late for their potential to directly probe the properties of the first stars, particularly the most energetic events that are visible near the edge of the observable universe. Until now, hypernovae, the unusually energetic Type Ib/c supernovae that are sometimes associated with gamma-ray bursts, have been overlooked as cosmic beacons at the highest redshifts. In this, the latest of a series of studies on Population III supernovae, we present numerical simulations of 25-50 M {sub ☉} hypernovae and their light curves done with the Los Alamos RAGE and SPECTRUM codes. We find that they will be visible at z = 10-15 to the James Webb Space Telescope and z = 4-5 to the Wide-Field Infrared Survey Telescope, tracing star formation rates in the first galaxies and at the end of cosmological reionization. If, however, the hypernova crashes into a dense shell ejected by its progenitor, it is expected that a superluminous event will occur that may be seen at z ∼ 20 in the first generation of stars.

  15. PART III-SECTION J

    National Nuclear Security Administration (NNSA)

    The objectives of the Transition Plan are to: (i) Minimize the impacts on continuity of operations; (ii) Maintain communication with staff and affected communities; (iii) Identify ...

  16. Recycling of CdTe photovoltaic waste

    DOEpatents

    Goozner, Robert E.; Long, Mark O.; Drinkard, Jr., William F.

    1999-01-01

    A method for extracting and reclaiming metals from scrap CdTe photovoltaic cells and manufacturing waste by leaching the waste with a leaching solution comprising nitric acid and water, skimming any plastic material from the top of the leaching solution, separating the glass substrate from the liquid leachate and electrolyzing the leachate to separate Cd from Te, wherein the Te is deposits onto a cathode while the Cd remains in solution.

  17. TE Connectivity Finds Answers in Tomography

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    healthcare, aerospace, and defense industries. TE Connectivity has a long-standing commitment to innovation and engineering excellence. Their products help address challenges...

  18. Te

    Energy Information Administration (EIA) (indexed site)

    9 8 7 6 5 4 3 2 1 9 8 7 6 5 4 3 2 1 11 10 25 24 23 22 21 20 18 17 16 15 14 13 12 11 10 19 10°W 20°W 30°W 40°W 50°W 60°W 70°W 70°W 80°W 80°W 90°W 90°W 100°W 100°W 110°W 110°W 120°W 120°W 130°W 130°W 140°W 140°W 150°W 150°W 160°W 170°W 180° 170°E 160°E 150°E 140°E 70°N 70°N 60°N 60°N 50°N 50°N 40°N 40°N 30°N 30°N 20°N 20°N 10°N 10°N # &   &  & # ' '  "  '  #      ( &  

  19. Te

    Energy Information Administration (EIA) (indexed site)

    4 3 2 1 9 8 7 6 5 4 3 2 1 20 19 18 17 16 15 14 13 12 11 10 10°W 20°W 30°W 40°W 50°W 60°W 70°W 70°W 80°W 80°W 90°W 90°W 100°W 100°W 110°W 110°W 120°W 120°W 130°W 130°W 140°W 140°W 150°W 150°W 160°W 170°W 180° 170°E 160°E 150°E 140°E 70°N 70°N 60°N 60°N 50°N 50°N 40°N 40°N 30°N 30°N 20°N 20°N 10°N 10°N 0 250 500 750 1,000 125 Miles / Millas / Milles 1:12 000 000 Border Crossings of Liquids Pipelines, North America Cruces Fronterizos de Ductos de

  20. Te

    Energy Information Administration (EIA) (indexed site)

    9 8 7 6 5 4 3 2 1 9 8 7 6 5 4 3 2 1 15 14 13 12 11 10 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 10°W 20°W 30°W 40°W 50°W 60°W 70°W 70°W 80°W 80°W 90°W 90°W 100°W 100°W 110°W 110°W 120°W 120°W 130°W 130°W 140°W 140°W 150°W 150°W 160°W 170°W 180° 170°E 160°E 150°E 140°E 70°N 70°N 60°N 60°N 50°N 50°N 40°N 40°N 30°N 30°N 20°N 20°N 10°N 10°N Border Crossings of Natural Gas Pipelines, North America Cruces Fronterizos de Ductos de Gas Natural,

  1. Te

    Energy Information Administration (EIA) (indexed site)

    10°W 20°W 30°W 40°W 50°W 60°W 70°W 70°W 80°W 80°W 90°W 90°W 100°W 100°W 110°W 110°W 120°W 120°W 130°W 130°W 140°W 140°W 150°W 150°W 160°W 170°W 180° 170°E 160°E 150°E 140°E 70°N 70°N 60°N 60°N 50°N 50°N 40°N 40°N 30°N 30°N 20°N 20°N 10°N 10°N 0 250 500 750 1,000 125 Miles / Millas / Milles 1:12 000 000 Coal Carbón Charbon Petroleum Petrolíferos Pétrole Geothermal Geotérmica Géothermie Hydroelectric Hidroeléctrica Hydroélectrique Natural Gas Gas

  2. Te

    Energy Information Administration (EIA) (indexed site)

         + + 2 )  3 " /  $ "     ( % * !  6      / , * " ! & ,   + 2 )    ( % * ! <       , 6" + + "   + + 2" ))"     ( % * '/   , ) /   " 0, 2/ " 0      & / " 1   , / *  )

  3. Te

    Energy Information Administration (EIA) (indexed site)

         - - 4 +   5 $ 1 & $     * ' , # 8       1. , $ # (.   - 4 +     * ' , # >      . 8 $ - - $   - - 4 $ + + $     * ' , )1  . + 1  $ 2. 4 1" $ 2      + . ! +   . 1(9 . - 3 +   11 # ( - " $   $ " 4 12.   . + 1  

  4. Te

    Energy Information Administration (EIA) (indexed site)

    0&1; &27; , )&30; & " 0&6; &1; &25; &27; &23;&1; &19; + 0, )" & ))" * " + 1 &1; &24; , * &30; )&1; &18; & " 1 &5; O c a n P a c i f i q u e P a c i f i c O c e a n O c a n o P a c f i c o O c a n A t l ...

  5. Te

    Energy Information Administration (EIA) (indexed site)

    &29; . + (1 2&6; &1; &27; &29; &25;&1; &19; - 2. + (+ + , - 3 &1; &21; . 1(9 . - 3 + &1; &20; + . + &5; O c a n P a c i f i q u e P a c i f i c O c e a n O c a n o P a c f i c o O c a n A t l ...

  6. CdTe devices and method of manufacturing same

    SciTech Connect

    Gessert, Timothy A.; Noufi, Rommel; Dhere, Ramesh G.; Albin, David S.; Barnes, Teresa; Burst, James; Duenow, Joel N.; Reese, Matthew

    2015-09-29

    A method of producing polycrystalline CdTe materials and devices that incorporate the polycrystalline CdTe materials are provided. In particular, a method of producing polycrystalline p-doped CdTe thin films for use in CdTe solar cells in which the CdTe thin films possess enhanced acceptor densities and minority carrier lifetimes, resulting in enhanced efficiency of the solar cells containing the CdTe material are provided.

  7. Shiloh III | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Shiloh III Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner enXco Developer EnXco Energy Purchaser Pacific Gas & Electric Co Location...

  8. Recycling of CdTe photovoltaic waste

    DOEpatents

    Goozner, Robert E.; Long, Mark O.; Drinkard, Jr., William F.

    1999-04-27

    A method for extracting and reclaiming metals from scrap CdTe photovoltaic cells and manufacturing waste by leaching the metals in dilute nitric acid, leaching the waste with a leaching solution comprising nitric acid and water, skimming any plastic material from the top of the leaching solution, separating the glass substrate from the liquid leachate, adding a calcium containing base to the leachate to precipitate Cd and Te, separating the precipitated Cd and Te from the leachate, and recovering the calcium-containing base.

  9. Recycling of CdTe photovoltaic waste

    DOEpatents

    Goozner, R.E.; Long, M.O.; Drinkard, W.F. Jr.

    1999-04-27

    A method for extracting and reclaiming metals from scrap CdTe photovoltaic cells and manufacturing waste by leaching the metals in dilute nitric acid, leaching the waste with a leaching solution comprising nitric acid and water, skimming any plastic material from the top of the leaching solution, separating the glass substrate from the liquid leachate, adding a calcium containing base to the leachate to precipitate Cd and Te, separating the precipitated Cd and Te from the leachate, and recovering the calcium-containing base. 3 figs.

  10. Nonlinear terahertz response of HgTe/CdTe quantum wells

    SciTech Connect

    Chen, Qinjun; Sanderson, Matthew; Zhang, Chao

    2015-08-24

    Without breaking the topological order, HgTe/CdTe quantum wells can have two types of bulk band structure: direct gap type (type I) and indirect gap type (type II). We report that the strong nonlinear optical responses exist in both types of bulk states under a moderate electric field in the terahertz regime. Interestingly, for the type II band structure, the third order conductivity changes sign when chemical potentials lies below 10 meV due to the significant response of the hole excitation close to the bottom of conduction band. Negative nonlinear conductivities suggest that HgTe/CdTe quantum wells can find application in the gain medium of a laser for terahertz radiation. The thermal influences on nonlinear optical responses of HgTe/CdTe quantum wells are also studied.

  11. Thermodynamic and Transport Properties of YTe3, LaTe3 and CeTe3

    SciTech Connect

    Ru, N.

    2011-08-19

    Measurements of heat capacity, susceptibility, and electrical resistivity are presented for single crystals of the charge density wave compounds YTe{sub 3}, LaTe{sub 3}, and CeTe{sub 3}. The materials are metallic to low temperatures, but have a small density of states due to the charge density wave gapping large portions of the Fermi surface. CeTe{sub 3} is found to be a weak Kondo lattice, with an antiferromagnetic ground state and T{sub N} = 2.8 K. The electrical resistivity of all three compounds is highly anisotropic, confirming the weak dispersion perpendicular to Te planes predicted by band structure calculations.

  12. GaTe semiconductor for radiation detection

    DOEpatents

    Payne, Stephen A.; Burger, Arnold; Mandal, Krishna C.

    2009-06-23

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  13. Title III hazardous air pollutants

    SciTech Connect

    Todd, R.

    1995-12-31

    The author presents an overview of the key provisions of Title III of the Clean Air Act Amendments of 1990. The key provisions include the following: 112(b) -- 189 Hazardous Air Pollutants (HAP); 112(a) -- Major Source: 10 TPY/25 TPY; 112(d) -- Application of MACT; 112(g) -- Modifications; 112(I) -- State Program; 112(j) -- The Hammer; and 112(r) -- Accidental Release Provisions.

  14. III

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Department of Energy IG Investigation with DOJ Results in over $10million Settlement IG Investigation with DOJ Results in over $10million Settlement IG Investigation with DOJ Results in Over $10million Settlement (106.63 KB) More Documents & Publications Savannah River Site Contractor Agrees to Pay $3.8 Million to Settle False Claims Act Allegations Semiannual Report to Congress: October 1, 2015 - March 31, 2016 Lockheed Martin Agrees to Pay $5 Million to Settle False Claims Act

  15. NIF Title III engineering plan

    SciTech Connect

    Deis, G

    1998-06-01

    The purpose of this document is to define the work that must be accomplished by the NIF Project during Title III Engineering. This definition is intended to be sufficiently detailed to provide a framework for yearly planning, to clearly identify the specific deliverables so that the Project teams can focus on them, and to provide a common set of objectives and processes across the Project. This plan has been preceded by similar documents for Title I and Title II design and complements the Site Management Plan, the Project Control Manual, the Quality Assurance Program Plan, the RM Parsons NIF Title III Configuration Control Plan, the Integrated Project Schedule, the Preliminary Safety Analysis Report, the Configuration Management Plan, and the Transition Plan.

  16. William A. Goddard III - JCAP

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    william a. goddard iii Principal Investigator Email: wag@wag.caltech.edu Dr. Goddard is a pioneer in developing methods for quantum mechanics (QM), force fields, molecular dynamics (MD), and Monte Carlo predictions on chemical and materials systems and is actively involved in applying these methods to ceramics, semiconductors, superconductors, thermoelectrics, metal alloys, polymers, proteins, nuclei acids, Pharma ligands, nanotechnology, and energetic materials. He uses QM methods to determine

  17. Thomas Francis Miller III - JCAP

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    THOMAS FRANCIS MILLER III Principal Investigator Email: tfm@caltech.edu Dr. Miller's research group develops theoretical and computational methods to understand a variety of molecular processes, including enzyme catalysis, solar-energy conversion, dendrite formation in lithium batteries, and the dynamics of soft matter and biological systems. An important aspect of this challenge is that many systems exhibit dynamics that couple vastly different timescales and lengthscales. A primary goal of

  18. SUPPLEMENT III REGARDING APPLICATION SUBMISSION

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    III REGARDING APPLICATION SUBMISSION SCHEDULE FOR: ADVANCED NUCLEAR ENERGY PROJECTS U.S. Department of Energy Loan Programs Office (As of January 19, 2016) THIRD SUPPLEMENT TO LOAN GUARANTEE SOLICITATION ANNOUNCEMENT FEDERAL LOAN GUARANTEES FOR ADVANCED NUCLEAR ENERGY PROJECTS Solicitation Number: DE-SOL- DE-SOL-0007791 OMB Control Number: 1910-5134; OMB Expiration Date 11/30/2016 Announcement Type: Supplemental Supplement Date: January 19, 2016 The above-referenced Loan Guarantee Solicitation

  19. Joel W. Ager III - JCAP

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    w. ager iii Principal Investigator Email: jwager@lbl.gov Dr. Ager's research interests include the fundamental electronic and transport characteristics of photovoltaic materials, development of new photoanodes and photocathodes based on abundant elements for solar fuels production, and the development of new oxide- and sulfide-based transparent conductors. In JCAP, Dr. Ager is investigating interactions of carbon-based supports with CO2-reduction electrocatalysts. His group is studying

  20. Altech III (b) | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    b) Jump to: navigation, search Name Altech III (b) Facility Altech III Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner SeaWest Developer...

  1. GRED III Phase II | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    2010 DOI Not Provided Check for DOI availability: http:crossref.org Online Internet link for GRED III Phase II Citation Bernie Karl. 2010. GRED III Phase II. p....

  2. Title III of the Defense Production Act

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Title III Title III of the D f P d ti A t Defense Production Act Matthew Seaford Matthew Seaford (703) 415-7107 DPA Background * The Defense Production Act (DPA) is the President's primary authority to ensure the timely availability of private sector resources for national defense. Title III of the DPA provides unique economic authorities to mitigate industrial Title III of the DPA provides unique economic authorities to mitigate industrial base shortfalls/risks and expand U.S. production

  3. Determination of CdTe bulk carrier lifetime and interface recombination velocity of CdTe/MgCdTe double heterostructures grown by molecular beam epitaxy

    SciTech Connect

    Zhao, Xin-Hao; Campbell, Calli M.; DiNezza, Michael J.; Liu, Shi; Zhao, Yuan; Zhang, Yong-Hang

    2014-12-22

    The bulk Shockley-Read-Hall carrier lifetime of CdTe and interface recombination velocity at the CdTe/Mg{sub 0.24}Cd{sub 0.76}Te heterointerface are estimated to be around 0.5??s and (4.7??0.4)??10{sup 2?}cm/s, respectively, using time-resolved photoluminescence (PL) measurements. Four CdTe/MgCdTe double heterostructures (DHs) with varying CdTe layer thicknesses were grown on nearly lattice-matched InSb (001) substrates using molecular beam epitaxy. The longest lifetime of 179?ns is observed in the DH with a 2??m thick CdTe layer. It is also shown that the photon recycling effect has a strong influence on the bulk radiative lifetime, and the reabsorption process affects the measured PL spectrum shape and intensity.

  4. Thermoelectric properties of p-type PbTe/Ag{sub 2}Te bulk composites by extrinsic phase mixing

    SciTech Connect

    Lee, Min Ho; Rhyee, Jong-Soo

    2015-12-15

    We investigated the thermoelectric properties of PbTe/Ag{sub 2}Te bulk composites, synthesized by hand milling, mixing, and hot press sintering. From x-ray diffraction and energy dispersive x-ray spectroscopy measurements, we observed Ag{sub 2}Te phase separation in the PbTe matrix without Ag atom diffusion. In comparison with previously reported pseudo-binary (PbTe){sub 1−x}(Ag{sub 2}Te){sub x} composites, synthesized by high temperature phase separation, the PbTe/Ag{sub 2}Te bulk composites fabricated with a low temperature phase mixing process give rise to p-type conduction of carriers with significantly decreased electrical conductivity. This indicates that Ag atom diffusion in the PbTe matrix changes the sign of the Seebeck coefficient to n-type and also increases the carrier concentration. Effective p-type doping with low temperature phase separation by mixing and hot press sintering can enhance the thermoelectric performance of PbTe/Ag{sub 2}Te bulk composites, which can be used as a p-type counterpart of n-type (PbTe){sub 1−x}(Ag{sub 2}Te){sub x} bulk composites.

  5. Kotzebue Wind Project Phase II & III | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    II & III Jump to: navigation, search Name Kotzebue Wind Project Phase II & III Facility Kotzebue Wind Project Phase II & III Sector Wind energy Facility Type Commercial Scale Wind...

  6. PROJECT SELECTIONS FOR DOE PHASE III XLERATOR SMALL BUSINESS...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    PROJECT SELECTIONS FOR DOE PHASE III XLERATOR SMALL BUSINESS PROGRAM PROJECT SELECTIONS FOR DOE PHASE III XLERATOR SMALL BUSINESS PROGRAM PDF icon SBIRPhaseIII.pdf More Documents...

  7. Mountain View Power Partners III Wind Farm | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    III Wind Farm Jump to: navigation, search Name Mountain View Power Partners III Wind Farm Facility Mountain View Power Partners III Sector Wind energy Facility Type Commercial...

  8. Study of asymmetries of Cd(Zn)Te devices investigated using photo-induced current transient spectroscopy, Rutherford backscattering, surface photo-voltage spectroscopy, and gamma ray spectroscopies

    SciTech Connect

    Crocco, J.; Bensalah, H.; Zheng, Q.; Dieguez, E.; Corregidor, V.; Avles, E.; Castaldini, A.; Fraboni, B.; Cavalcoli, D.; Cavallini, A.; Vela, O.

    2012-10-01

    Despite these recent advancements in preparing the surface of Cd(Zn)Te devices for detector applications, large asymmetries in the electronic properties of planar Cd(Zn)Te detectors are common. Furthermore, for the development of patterned electrode geometries, selection of each electrode surface is crucial for minimizing dark current in the device. This investigation presented here has been carried out with three objectives. Each objective is oriented towards establishing reliable methods for the selection of the anode and cathode surfaces independent of the crystallographic orientation. The objectives of this study are (i) investigate how the asymmetry in I-V characteristics of Cd(Zn)Te devices may be associated with the TeO2 interfacial layer using Rutherford backscattering to study the structure at the Au-Cd(Zn)Te interface, (ii) develop an understanding of how the concentration of the active traps in Cd(Zn)Te varies with the external bias, and (iii) propose non-destructive methods for selection of the anode and cathode which are independent of crystallographic orientation. The spectroscopic methods employed in this investigation include Rutherford backscattering spectroscopy, photo-induced current transient spectroscopy, and surface photo-voltage spectroscopy, as well as gamma ray spectroscopy to demonstrate the influence on detector properties.

  9. Post-Growth Annealing of Bridgman-grown CdZnTe and CdMnTe Crystals...

    Office of Scientific and Technical Information (OSTI)

    temperature gradient, we observed the migration of Te inclusions from a low-temperature ... These results show that the migration, diffusion, and reaction of Te with Cd in the matrix ...

  10. Post-Growth Annealing of Bridgman-grown CdZnTe and CdMnTe Crystals...

    Office of Scientific and Technical Information (OSTI)

    Nuclear Radiation Detectors Citation Details In-Document Search Title: Post-Growth Annealing of Bridgman-grown CdZnTe and CdMnTe Crystals for Room-temperature Nuclear ...

  11. Opportunities in III-V/Si Integration and New Materials for High Efficiency PV

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Novel Thin Films Inorganic PV Materials Andriy Zakutayev October 18, 2016 Supported by U.S. Department of Energy Energy Efficiency and Renewable Energy Solar Energy Technology Program 2 Why We Need Novel Thin Films Inorganic PV Materials? * Si and CdTe made remarkable progress but may not be scalable to multi-TW level * Perovskites and CZTS are scalable, but may have performance and reliability issues * III-Vs meet all these criteria but the cost still remains relatively high The search for

  12. The Mark III vertex chamber

    SciTech Connect

    Adler, J.; Bolton, T.; Bunnell, K.; Cassell, R.; Cheu, E.; Freese, T.; Grab, C.; Mazaheri, G.; Mir, R.; Odian, A.

    1987-07-01

    The design and construction of the new Mark III vertex chamber is described. Initial tests with cosmic rays prove the ability of track reconstruction and yield triplet resolutions below 50 ..mu..m at 3 atm using argon/ethane (50:50). Also performed are studies using a prototype of a pressurized wire vertex chamber with 8 mm diameter straw geometry. Spatial resolution of 35mm was obtained using dimethyl ether (DME) at 1 atm and 30 ..mu..m using argon/ethane (50/50 mixture) at 4 atm. Preliminary studies indicate the DME to adversely affect such materials as aluminized Mylar and Delrin.

  13. The sapphire backscattering monochromator at the Dynamics beamline P01 of PETRA III

    DOE PAGES [OSTI]

    Alexeev, P.; Asadchikov, V.; Bessas, D.; Butashin, A.; Deryabin, A.; Dill, F. -U.; Ehnes, A.; Herlitschke, M.; Hermann, R. P.; Jafari, A.; et al

    2016-02-23

    Here, we report on a high resolution sapphire backscattering monochromator installed at the Dynamics beamline P01 of PETRA III. The device enables nuclear resonance scattering experiments on M ossbauer isotopes with transition energies between 20 and 60 keV with sub-meV to meV resolution. In a first performance test with 119Sn nuclear resonance at a X-ray energy of 23.88 keV an energy resolution of 1.34 meV was achieved. Moreover, the device extends the field of nuclear resonance scattering at the PETRA III synchrotron light source to many further isotopes like 151Eu, 149Sm, 161Dy, 125Te and 121Sb.

  14. Effect and optimization of CdS/CdTe interdiffusion on CdTe electrical properties and CdS/CdTe cell performance

    SciTech Connect

    Song, W.; Mao, D.; Kaydanov, V.; Ohno, T.R.; Trefny, J.V.; Levi, D.H.; Johnston, S. McCandless, B.E.

    1999-03-01

    We have investigated the effect of the CdS/CdTe interdiffusion on the properties of the CdTe films and the CdS/CdTe cell performance. Sulfur (S) diffusion into the CdTe films leads to a decreased defect density in the films, improvement of cell performance, and possibly to the increase of the carrier lifetime in the films. Cell performance is improved with the increase of the amount of S in the CdTe films. S diffusion into CdTe also deteriorates the uniformity of the CdS window layers, resulting in worse cell performance. Based on this study, we propose a processing method to improve cell performance. {copyright} {ital 1999 American Institute of Physics.}

  15. DOE/NNSA perspective safeguard by design: GEN III/III+ light water reactors and beyond

    SciTech Connect

    Pan, Paul Y

    2010-12-10

    An overview of key issues relevant to safeguards by design (SBD) for GEN III/IV nuclear reactors is provided. Lessons learned from construction of typical GEN III+ water reactors with respect to SBD are highlighted. Details of SBD for safeguards guidance development for GEN III/III+ light water reactors are developed and reported. This paper also identifies technical challenges to extend SBD including proliferation resistance methodologies to other GEN III/III+ reactors (except HWRs) and GEN IV reactors because of their immaturity in designs.

  16. GRED III Phase II | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    III Phase II GRED III Phase II Engineered Geothermal Systems, Low Temp, Exploration Demonstration Projects. Project objectives: To gain a better understanding of the geothermal reservoir at Chena Hot Springs Resort in Alaska; Test and document the reliability of previous predictions as to the nature of the reservoir. egs_karl_gred_3_phase_2.pdf (601.26 KB) More Documents & Publications Fairbanks Geothermal Energy Project GRED Drilling Award … GRED III Phase II; 2010 Geothermal Technology

  17. Teton County, Wyoming: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    TriLateral Energy LLC Places in Teton County, Wyoming Alta, Wyoming Hoback, Wyoming Jackson, Wyoming Moose Wilson Road, Wyoming Rafter J Ranch, Wyoming South Park, Wyoming Teton...

  18. Kotzebue Wind Project III | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Kotzebue Wind Project III Facility Kotzebue Wind Project Sector Wind energy Facility Type Small Scale Wind Facility Status In Service Owner Kotzebue Elec. Assoc. Developer Kotzebue...

  19. New chalcogenide glasses in the CdTe-AgI-As{sub 2}Te{sub 3} system

    SciTech Connect

    Kassem, M.; Le Coq, D.; Boidin, R.; Bychkov, E.; ULCO, LPCA, EA 4493, F-59140 Dunkerque

    2012-02-15

    Highlights: Black-Right-Pointing-Pointer Determination of the glass-forming region in the pseudo-ternary CdTe-AgI-As{sub 2}Te{sub 3} system. Black-Right-Pointing-Pointer Characterization of macroscopic properties of the new CdTe-AgI-As{sub 2}Te{sub 3} glasses. Black-Right-Pointing-Pointer Characterization of the total conductivity of CdTe-AgI-As{sub 2}Te{sub 3} glasses. Black-Right-Pointing-Pointer Comparison between the selenide and telluride equivalent systems. -- Abstract: Chalcogenide glasses in the pseudo-ternary CdTe-AgI-As{sub 2}Te{sub 3} system were synthesized and the glass-forming range was determined. The maximum content of CdTe in this glass system was found to be equal to 15 mol.%. The macroscopic characterizations of samples have consisted in Differential Scanning Calorimetry, density, and X-ray diffraction measurements. The cadmium telluride addition does not generate any significant change in the glass transition temperature but the resistance of binary AgI-As{sub 2}Te{sub 3} glasses towards crystallisation is estimated to be decreasing on the base of {Delta}T = T{sub x} - T{sub g} parameter. The total electrical conductivity {sigma} was measured by complex impedance spectroscopy. First, the CdTe additions in the (AgI){sub 0.5}(As{sub 2}Te{sub 3}){sub 0.5} host glass, (CdTe){sub x}(AgI){sub 0.5-x/2}(As{sub 2}Te{sub 3}){sub 0.5-x/2} lead to a conductivity decrease at x {<=} 0.05. Then, the behaviour is reversed at 0.05 {<=} x {<=} 0.15. The obtained results are discussed by comparison with the equivalent selenide system.

  20. Preparation of III-V semiconductor nanocrystals

    DOEpatents

    Alivisatos, A.P.; Olshavsky, M.A.

    1996-04-09

    Nanometer-scale crystals of III-V semiconductors are disclosed. They are prepared by reacting a group III metal source with a group V anion source in a liquid phase at elevated temperature in the presence of a crystallite growth terminator such as pyridine or quinoline. 4 figs.

  1. Preparation of III-V semiconductor nanocrystals

    DOEpatents

    Alivisatos, A. Paul; Olshavsky, Michael A.

    1996-01-01

    Nanometer-scale crystals of III-V semiconductors are disclosed, They are prepared by reacting a group III metal source with a group V anion source in a liquid phase at elevated temperature in the presence of a crystallite growth terminator such as pyridine or quinoline.

  2. Surveying The TeV Sky With Milagro

    SciTech Connect

    Walker, G. P.

    2006-11-17

    A wide field of view, high duty factor TeV gamma-ray observatory is essential for studying TeV astrophysical sources, because most of these sources are either highly variable or are extended. Milagro is such a TeV detector and has performed the deepest survey of the Northern Hemisphere sky. In addition to detecting the Crab Nebula and Mrk 421, which are known TeV sources, Milagro has made the first detection of diffuse TeV emission from the Galactic plane. The Milagro data has been searched for unknown point sources and extended sources. A new extended TeV source is seen and is coincident with an EGRET unidentified source. Based on the success of Milagro, a second generation water Cherenkov gamma-ray observatory is planned which will give an increase in sensitivity of more than an order of magnitude.

  3. Luminosity goals for a 100-TeV pp collider

    SciTech Connect

    Hinchliffe, Ian; Kotwal, Ashutosh; Mangano, Michelangelo L.; Quigg, Chris; Wang, Lian-Tao

    2015-08-20

    We consider diverse examples of science goals that provide a framework to assess luminosity goals for a future 100-TeV proton-proton collider.

  4. Astrophysics and Cosmology with TeV Gamma Rays

    SciTech Connect

    Aharonian, Felix

    2005-07-13

    I will discuss the astrophysical and cosmological implications of recent exciting discoveries of TeV gamma-rays from objects representing several Galactic and Extragalactic source populations.

  5. High Performance Zintl Phase TE Materials with Embedded Particles...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Presents results from embedding nanoparticles in magnesium silicide alloy matrix ... Zintl Phase Materials with Embedded Nanoparticles High performance Zintl phase TE ...

  6. Interface passivation and contacts in CdTe

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    SunUP - CdTe Interfaces and Contacts Teresa Barnes October 18, 2016 2 GW Production with Dramatic Efficiency Improvements CdTe efficiency increased from 17% to 22% in six years! 3 Module and Cell Efficiencies for Commercial PV Cell Module 4 Silicon Module Prices http://www.nrel.gov/docs/fy16osti/65872.pdf 5 CdTe Module Costs http://www.nrel.gov/docs/fy16osti/65872.pdf 6 7 There Isn't Enough Te on Earth!! Wikipedia, RSC, etc. 8 9 They Will Find More if the Price is Right 10 How Did We Get Here?

  7. Pressure dependence of the charge-density-wave and superconducting states in GdTe3, TbTe3, and DyTe3

    DOE PAGES [OSTI]

    Zocco, D. A.; Hamlin, J. J.; Grube, K.; Chu, J. -H.; Kuo, H. -H.; Fisher, I. R.; Maple, M. B.

    2015-05-14

    Here, we present electrical resistivity and ac-susceptibility measurements of GdTe3, TbTe3 and DyTe3 performed under pressure. An upper charge-density-wave (CDW) is suppressed at a rate of dTCW,1/dP~ –85K/GPa. For TbTe3 and DyTe3, a second CDW below TCDW,2 increases with pressure until it reaches the TCDW,1(P) line. For GdTe3, the lower CDW emerges as pressure is increased above ~1GPa. As these two CDW states are suppressed with pressure, superconductivity (SC) appears in the three compounds at lower temperatures. Ac-susceptibility experiments performed on TbTe3 provide compelling evidence for bulk SC in the low-pressure region of the phase diagram. We provide measurements ofmore » superconducting critical fields and discuss the origin of a high-pressure superconducting phase occurring above 5 GPa.« less

  8. Photodetectors using III-V nitrides

    DOEpatents

    Moustakas, T.D.; Misra, M.

    1997-10-14

    A photodetector using a III-V nitride and having predetermined electrical properties is disclosed. The photodetector includes a substrate with interdigitated electrodes formed on its surface. The substrate has a sapphire base layer, a buffer layer formed from a III-V nitride and a single crystal III-V nitride film. The three layers are formed by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy (ECR-assisted MBE). Use of the ECR-assisted MBE process allows control and predetermination of the electrical properties of the photodetector. 24 figs.

  9. Photodetectors using III-V nitrides

    DOEpatents

    Moustakas, Theodore D.; Misra, Mira

    1997-01-01

    A photodetector using a III-V nitride and having predetermined electrical properties is disclosed. The photodetector includes a substrate with interdigitated electrodes formed on its surface. The substrate has a sapphire base layer, a buffer layer formed from a III-V nitride and a single crystal III-V nitride film. The three layers are formed by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy (ECR-assisted MBE). Use of the ECR-assisted MBE process allows control and predetermination of the electrical properties of the photodetector.

  10. Copper migration in CdTe heterojunction solar cells

    SciTech Connect

    Chou, H.C.; Rohatgi, A.; Jokerst, N.M.; Thomas, E.W.; Kamra, S.

    1996-07-01

    CdTe solar cells were fabricated by depositing a Au/Cu contact with Cu thickness in the range of 50 to 150A on polycrystalline CdTe/CdS/SnO{sub 2} glass structures. The increase in Cu thickness improves ohmic contact and reduces series resistance (R{sub s}), but the excess Cu tends to diffuse into CdTe and lower shunt resistance (R{sub sh}) and cell performance. Light I-V and secondary ion mass spectroscopy (SIMS) measurements were performed to understand the correlations between the Cu contact thickness, the extent of Cu incorporation in the CdTe cells, and its impact on the cell performance. The CdTe/CdS/SnO{sub 2} glass, CdTe/CdS/GaAs, and CdTe/GaAs structures were prepared in an attempt to achieve CdTe films with different degrees of crystallinity and grain size. A large grain polycrystalline CdTe thin film solar cell was obtained for the first time by selective etching the GaAs substrate coupled with the film transfer onto a glass substrate. SIMS measurement showed that poor crystallinity and smaller grain size of the CdTe film promotes Cu diffusion and decreases the cell performance. Therefore, grain boundaries are the main conduits for Cu migration and larger CdTe grain size or alternate method of contact formation can mitigate the adverse effect of Cu and improve the cell performance. 15 refs., 1 fig.,6 tabs.

  11. Complexation of N4-Tetradentate Ligands with Nd(III) and Am(III)

    SciTech Connect

    Ogden, Mark D.; Sinkov, Sergey I.; Meier, G. Patrick; Lumetta, Gregg J.; Nash, Kenneth L.

    2012-12-06

    To improve understanding of aza-complexants in trivalent actinide–lanthanide separations, a series of tetradentate N-donor ligands have been synthesized and their complexation of americium(III) and neodymium(III) investigated by UV–visible spectrophotometry in methanolic solutions. The six pyridine/alkyl amine/imine ligands are N,N0-bis(2-methylpyridyl)-1,2-diaminoethane, N,N0-bis(2-methylpyridyl)-1,3-diaminopropane, trans-N,N-bis(2-pyridylmethyl)-1,2-diaminocyclohexane (BPMDAC), N,N’-bis(2-pyridylmethyl)piperazine, N,N’-bis-[pyridin-2-ylmethylene]ethane-1,2-diamine, and trans-N,Nbis-([pyridin-2-ylmethylene]-cyclohexane-1,2-diamine. Each ligand has two pyridine groups and two aliphatic amine/imine N-donor atoms arranged with different degrees of preorganization and structural backbone rigidity. Conditional stability constants for the complexes of Am(III) and Nd(III) by these ligands establish the selectivity patterns. The overall selectivity of Am(III) over Nd(III) is similar to that reported for the terdentate bis(dialkyltriazinyl)pyridine molecules. The cyclohexane amine derivative (BPMDAC) is the strongest complexant and shows the highest selectivity for Am(III) over Nd(III) while the imines appear to prefer a bridging arrangement between two cations. These results suggest that this series of ligands could be employed to develop an enhanced actinide(III)– lanthanide(III) separation system.

  12. Panel Session III: Innovation and Coordination

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Lessons Learned for Hydrogen Panel Session III: Innovation Panel Session III: Innovation and Coordination and Coordination ______________________________ Stefan Unnasch Life Cycle Associates 3 April 2008 2 Hydrogen Vision Life Cycle Associates 3 Hydrogen Infrastructure Today Life Cycle Associates Source: Weinert, J. X., et al.. (2005). CA Hydrogen Highway Network Blueprint Plan, Economics Report 4 Innovation and Coordination Life Cycle Associates Innovation Coordination ☯ Slow Fast Cars Codes

  13. Isolation and microbial reduction of Fe(III) phyllosilicates...

    Office of Scientific and Technical Information (OSTI)

    Isolation and microbial reduction of Fe(III) phyllosilicates from subsurface sediments Citation Details In-Document Search Title: Isolation and microbial reduction of Fe(III) ...

  14. Klondike III II Wind Farm | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    II Wind Farm Jump to: navigation, search Name Klondike III II Wind Farm Facility Klondike III Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service...

  15. Medicine Bow Wind Farm III | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    III Jump to: navigation, search Name Medicine Bow Wind Farm III Facility Medicine Bow Sector Wind energy Facility Type Small Scale Wind Facility Status In Service Owner Platte...

  16. Lamar Wind Energy Project III | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    III Jump to: navigation, search Name Lamar Wind Energy Project III Facility Lamar Wind Energy Project Sector Wind energy Facility Type Commercial Scale Wind Facility Status In...

  17. Thermoelectric device including an alloy of GeTe and AgSbTe as the P-type element

    DOEpatents

    Skrabek, Emanuel Andrew; Trimmer, Donald Smith

    1976-01-01

    Improved alloys suitable for thermoelectric applications and having the general formula: (AgSbTe.sub.2).sub.1.sub.-x + (GeTe).sub.x wherein x has a value of about 0.80 and 0.85, have been found to possess unexpectedly high thermoelectric properties such as efficiency index, as well as other improved physical properties.

  18. TRUPACT-III Content Codes (TRUCON-III), Revision 2, July 2012

    Office of Environmental Management (EM)

    WIPP 11-3458 Rev. 2 TRUPACT-III CONTENT CODES (TRUCON-III) Revision 2 July 2012 This document supersedes DOE/WIPP 10-3458, Revision 1 DOE/WIPP 11-3458 Rev. 2 TRUPACT-III CONTENT CODES (TRUCON-III) Revision 2 July 2012 Approved by: [Signature on File] Date:_ 12 July 2012 _ J. R. Stroble, Director, Office of the National TRU Program DOE/WIPP 11-3458 Rev. 2, July 2012 3 This document has been submitted as required to: U.S. Department of Energy Office of Scientific and Technical Information PO Box

  19. Design of Integrated III-Nitride/Non-III-Nitride Tandem Photovoltaic Devices

    SciTech Connect

    Toledo, N. G.; Friedman, D..J.; Farrell, R. M.; Perl, E. E.; Lin, C. T.; Bowers, J. E.; Speck, J. S.; Mishra, U. K.

    2012-03-01

    The integration of III-nitride and non-III-nitride materials for tandem solar cell applications can improve the efficiency of the photovoltaic device due to the added power contributed by the III-nitride top cell to that of high-efficiency multi-junction non-III-nitride solar cells if the device components are properly designed and optimized. The proposed tandem solar cell is comprised of a III-nitride top cell bonded to a non-III-nitride, series-constrained, multi-junction subcell. The top cell is electrically isolated, but optically coupled to the underlying subcell. The use of a III-nitride top cell is potentially beneficial when the top junction of a stand-alone non-III-nitride subcell generates more photocurrent than the limiting current of the non-III-nitride subcell. Light producing this excess current can either be redirected to the III-nitride top cell through high energy photon absorption, redirected to the lower junctions through layer thickness optimization, or a combination of both, resulting in improved total efficiency. When the non-III-nitride cell's top junction is the limiting junction, the minimum power conversion efficiency that the III-nitride top cell must contribute should compensate for the spectrum filtered from the multi-junction subcell for this design to be useful. As the III-nitride absorption edge wavelength, {lambda}{sub N}, increases, the performance of the multi-junction subcell decreases due to spectral filtering. In the most common spectra of interest (AM1.5G, AM1.5 D, and AM0), the technology to grow InGaN cells with {lambda}{sub N}<520 nm is found to be sufficient for III-nitride top cell applications. The external quantum efficiency performance, however, of state-of-the-art InGaN solar cells still needs to be improved. The effects of surface/interface reflections are also presented. The management of these reflection issues determines the feasibility of the integrated III-nitride/non-III-nitride design to improve overall cell

  20. Multiband Te p Based Superconductivity of Ta4Pd3Te16

    DOE PAGES [OSTI]

    Singh, David J.

    2014-10-06

    We recently discovered that Ta4Pd3Te16 is a superconductor that has been suggested to be an unconventional superconductor near magnetism. Here, we report electronic structure calculations showing that despite the layered crystal structure the material is an anisotropic three-dimensional (3D) metal. The Fermi surface contains prominent one-dimensional (1D) and two-dimensional (2D) features, including nested 1D sheets, a 2D cylindrical section, and a 3D sheet. Moreover, the electronic states that make up the Fermi surface are mostly derived from Te p states with small Ta d and Pd d contributions. This places the compound far from magnetic instabilities. The results are discussedmore » in terms of multiband superconductivity.« less

  1. Use of separate ZnTe interface layers to form OHMIC contacts to p-CdTe films

    DOEpatents

    Gessert, Timothy A.

    1999-01-01

    A method of improving electrical contact to a thin film of a p-type tellurium-containing II-VI semiconductor comprising: depositing a first undoped layer of ZnTe on a thin film of p-type tellurium containing II-VI semiconductor with material properties selected to limit the formation of potential barriers at the interface between the p-CdTe and the undoped layer, to a thickness sufficient to control diffusion of the metallic-doped ZnTe into the p-type tellurim-containing II-VI semiconductor, but thin enough to minimize affects of series resistance; depositing a second heavy doped p-type ZnTe layer to the first layer using an appropriate dopant; and depositing an appropriate metal onto the outer-most surface of the doped ZnTe layer for connecting an external electrical conductor to an ohmic contact.

  2. Use of separate ZnTe interface layers to form ohmic contacts to p-CdTe films

    DOEpatents

    Gessert, T.A.

    1999-06-01

    A method of is disclosed improving electrical contact to a thin film of a p-type tellurium-containing II-VI semiconductor comprising: depositing a first undoped layer of ZnTe on a thin film of p-type tellurium containing II-VI semiconductor with material properties selected to limit the formation of potential barriers at the interface between the p-CdTe and the undoped layer, to a thickness sufficient to control diffusion of the metallic-doped ZnTe into the p-type tellurium-containing II-VI semiconductor, but thin enough to minimize affects of series resistance; depositing a second heavy doped p-type ZnTe layer to the first layer using an appropriate dopant; and depositing an appropriate metal onto the outer-most surface of the doped ZnTe layer for connecting an external electrical conductor to an ohmic contact. 11 figs.

  3. Search for massive resonances in dijet systems containing jets tagged as W or Z boson decays in pp collisions at ?s = 8 TeV

    SciTech Connect

    Khachatryan, Vardan

    2014-08-01

    Search for massive resonances in dijet systems containing jets tagged as W or Z boson decays in pp collisions at ?s = 8 TeV05/08/2014A search is reported for massive resonances decaying into a quark and a vector boson (W or Z), or two vector bosons (WW, WZ, or ZZ). The analysis is performed on an inclusive sample of multijet events corresponding to an integrated luminosity of 19.7 inverse femtobarns, collected in proton-proton collisions at a centre-of-mass energy of 8 TeV with the CMS detector at the LHC. The search uses novel jet-substructure identification techniques that provide sensitivity to the presence of highly boosted vector bosons decaying into a pair of quarks. Exclusion limits are set at a confidence level of 95% on the production of: (i) excited quark resonances q* decaying to qW and qZ for masses less than 3.2 TeV and 2.9 TeV, respectively, (ii) a Randall-Sundrum graviton G[RS] decaying into WW for masses below 1.2 TeV, and (iii) a heavy partner of the W boson W' decaying into WZ for masses less than 1.7 TeV. For the first time mass limits are set on W' to WZ and G[RS] to WW in the all-jets final state. The mass limits on q* to qW, q* to qZ, W' to WZ, G[RS] to WW are the most stringent to date. A model with a "bulk" graviton G[Bulk] that decays into WW or ZZ bosons is also studied.

  4. Electrochemically deposited BiTe-based nanowires for thermoelectric applications

    SciTech Connect

    Ng, Inn-Khuan; Kok, Kuan-Ying; Rahman, Che Zuraini Che Ab; Saidin, Nur Ubaidah; Ilias, Suhaila Hani; Choo, Thye-Foo

    2014-02-12

    Nanostructured materials systems such as thin-films and nanowires (NWs) are promising for thermoelectric power generation and refrigeration compared to traditional counterparts in bulk, due to their enhanced thermoelectric figures-of-merit. BiTe and its derivative compounds, in particular, are well-known for their near-room temperature thermoelectric performance. In this work, both the binary and ternary BiTe-based nanowires namely, BiTe and BiSbTe, were synthesized using template-assisted electrodeposition. Diameters of the nanowires were controlled by the pore sizes of the anodised alumina (AAO) templates used. Systematic study on the compositional change as a function of applied potential was carried out via Linear Sweep Voltanmetry (LSV). Chemical compositions of the nanowires were studied using Energy Dispersive X-ray Spectrometry (EDXS) and their microstructures evaluated using diffraction and imaging techniques. Results from chemical analysis on the nanowires indicated that while the Sb content in BiSbTe nanowires increased with more negative deposition potentials, the formation of Te{sup 0} and Bi{sub 2}Te{sub 3} were favorable at more positive potentials.

  5. Surveying the TeV Sky with Milagro

    SciTech Connect

    Lansdell, C. P.

    2006-07-11

    A wide field of view, high duty factor, TeV gamma-ray observatory is essential for studying TeV astrophysical sources, because most of these sources are either highly variable or are extended. Milagro is such a TeV detector and has performed the deepest survey of the Northern Hemisphere sky. In addition to detecting the known TeV sources of the Crab Nebula and Markarian 421, Milagro has made the first detection of diffuse TeV emission from the Galactic plane. The Milagro data has been searched for unknown point sources and extended sources. Evidence for a new extended TeV source is seen and is coincident with an EGRET unidentified source. The Milagro data has also been searched for the predicted TeV emitters of gamma-ray bursts, galaxy clusters, and EGRET unidentified sources. Based on the success of Milagro, a second generation water Cherenkov gamma-ray observatory is planned which will give an increase in sensitivity of more than an order of magnitude.

  6. SBIR_Phase_III.pdf | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    SBIR_Phase_III.pdf SBIR_Phase_III.pdf (228.04 KB) More Documents & Publications PROJECT SELECTIONS FOR DOE PHASE III XLERATOR SMALL BUSINESS PROGRAM - pg 3 PROJECT SELECTIONS FOR DOE PHASE III XLERATOR SMALL BUSINESS PROGRAM Albany HTS Power Cable

  7. Molten-Salt-Based Growth of Group III Nitrides

    DOEpatents

    Waldrip, Karen E.; Tsao, Jeffrey Y.; Kerley, Thomas M.

    2008-10-14

    A method for growing Group III nitride materials using a molten halide salt as a solvent to solubilize the Group-III ions and nitride ions that react to form the Group III nitride material. The concentration of at least one of the nitride ion or Group III cation is determined by electrochemical generation of the ions.

  8. Cu Migration in Polycrystalline CdTe Solar Cells

    SciTech Connect

    Guo, Da; Akis, Richard; Brinkman, Daniel; Sankin, Igor; Fang, Tian; Vasileska, Dragica; Ringhofer, Christian

    2014-03-12

    An impurity reaction-diffusion model is applied to Cu defects and related intrinsic defects in polycrystalline CdTe for a better understanding of Cu’s role in the cell level reliability of CdTe PV devices. The simulation yields transient Cu distributions in polycrystalline CdTe during solar cell processing and stressing. Preliminary results for Cu migration using available diffusivity and solubility data show that Cu accumulates near the back contact, a phenomena that is commonly observed in devices after back-contact processing or stress conditions.

  9. Ba2TeO: A new layered oxytelluride

    DOE PAGES [OSTI]

    Besara, T.; Ramirez, D.; Sun, J.; Whalen, J. B.; Tokumoto, T. D.; McGill, S. A.; Singh, D. J.; Siegrist, T.

    2015-02-01

    For single crystals of the new semiconducting oxytelluride phase, Ba2TeO, we synthesized from barium oxide powder and elemental tellurium in a molten barium metal flux. Ba2TeO crystallizes in tetragonal symmetry with space group P4/nmm (#129), a=5.0337(1) Å, c=9.9437(4) Å, Z=2. The crystals were characterized by single crystal x-ray diffraction, heat capacity and optical measurements. Moreover, the optical measurements along with electronic band structure calculations indicate semiconductor behavior with a band gap of 2.93 eV. Resistivity measurements show that Ba2TeO is highly insulating.

  10. Doublet III neutral beam power system

    SciTech Connect

    Nerem, A.; Beal, J.W.; Colleraine, A.P.; LeVine, F.H.; Pipkins, J.F.; Remsen, D.B. Jr.; Tooker, J.F.; Varga, H.J.; Franck, J.V.

    1981-01-01

    The Doublet III neutral beam power system supplies pulsed power to the neutral beam injectors for plasma heating experiments on the Doublet III tokamak. The power supply system is connected to an ion source where the power is converted to an 80 kV, 80A, 0.5 sec beam of hydrogen ions at maximum power output. These energetic ions undergo partial neutralization via charge exchange in the beamline. The energetic neutral hydrogen atoms pass through the Doublet III toroidal and poloidal magnet fields and deposit their energy in the confined plasma. The unneutralized ions are deflected into a water-cooled dump. The entire system is interfaced through the neutral beam computer instrumentation and control system.

  11. Electronic properties of GeTe and Ag- or Sb-substituted GeTe studied by low-temperature Te125 NMR

    DOE PAGES [OSTI]

    Cui, J.; Levin, E. M.; Lee, Y.; Furukawa, Y.

    2016-08-18

    We have carried out 125Te nuclear magnetic resonance (NMR) in a wide temperature range of 1.5–300 K to investigate the electronic properties of Ge50 Te50, Ag2 Ge48Te50 , and Sb2 Ge48 Te50 from a microscopic point of view. From the temperature dependence of the NMR shift (K) and nuclear spin lattice relaxation rate (1/T1), we found that two bands contribute to the physical properties of the materials. One band overlaps the Fermi level providing the metallic state where no strong electron correlations are revealed by Korringa analysis. The other band is separated from the Fermi level by an energy gapmore » of Eg/kB ~67 K, which gives rise to semiconductorlike properties. First-principles calculation reveals that the metallic band originates from the Ge vacancy while the semiconductorlike band is related to the fine structure of the density of states near the Fermi level. We find low-temperature Te125 NMR data for the materials studied here clearly show that Ag substitution increases hole concentration while Sb substitution decreases it.« less

  12. Modeling Copper Diffusion in Polycrystalline CdTe Solar Cells

    SciTech Connect

    Akis, Richard; Brinkman, Daniel; Sankin, Igor; Fang, Tian; Guo, Da; Vasileska, Dragica; Ringhofer, Christain

    2014-06-06

    It is well known that Cu plays an important role in CdTe solar cell performance as a dopant. In this work, a finite-difference method is developed and used to simulate Cu diffusion in CdTe solar cells. In the simulations, which are done on a two-dimensional (2D) domain, the CdTe is assumed to be polycrystalline, with the individual grains separated by grain boundaries. When used to fit experimental Cu concentration data, bulk and grain boundary diffusion coefficients and activation energies for CdTe can be extracted. In the past, diffusion coefficients have been typically obtained by fitting data to simple functional forms of limited validity. By doing full simulations, the simplifying assumptions used in those analytical models are avoided and diffusion parameters can thus be determined more accurately

  13. CdTe Solar Cells: The Role of Copper

    SciTech Connect

    Guo, Da; Akis, Richard; Brinkman, Daniel; Sankin, Igor; Fang, Tian; Vasileska, Dragica; Ringhofer, Christain

    2014-06-06

    In this work, we report on developing 1D reaction-diffusion solver to understand the kinetics of p-type doping formation in CdTe absorbers and to shine some light on underlying causes of metastabilities observed in CdTe PV devices. Evolution of intrinsic and Cu-related defects in CdTe solar cell has been studied in time-space domain self-consistently with free carrier transport and Poisson equation. Resulting device performance was simulated as a function of Cu diffusion anneal time showing pronounced effect the evolution of associated acceptor and donor states can cause on device characteristics. Although 1D simulation has intrinsic limitations when applied to poly-crystalline films, the results suggest strong potential of the approach in better understanding of the performance and metastabilities of CdTe photovoltaic device.

  14. Extreme solid state refrigeration using nanostructured Bi-Te alloys.

    SciTech Connect

    Lima Sharma, Ana L.; Spataru, Dan Catalin; Medlin, Douglas L.; Sharma, Peter Anand; Morales, Alfredo Martin

    2009-09-01

    Materials are desperately needed for cryogenic solid state refrigeration. We have investigated nanostructured Bi-Te alloys for their potential use in Ettingshausen refrigeration to liquid nitrogen temperatures. These alloys form alternating layers of Bi{sub 2} and Bi{sub 2}Te{sub 3} blocks in equilibrium. The composition Bi{sub 4}Te{sub 3} was identified as having the greatest potential for having a high Ettingshausen figure of merit. Both single crystal and polycrystalline forms of this material were synthesized. After evaluating the Ettingshausen figure of merit for a large, high quality polycrystal, we simulated the limits of practical refrigeration in this material from 200 to 77 K using a simple device model. The band structure was also computed and compared to experiments. We discuss the crystal growth, transport physics, and practical refrigeration potential of Bi-Te alloys.

  15. Native defects in MBE-grown CdTe

    SciTech Connect

    Olender, Karolina; Wosinski, Tadeusz; Makosa, Andrzej; Tkaczyk, Zbigniew; Kolkovsky, Valery; Karczewski, Grzegorz

    2013-12-04

    Deep-level traps in both n- and p-type CdTe layers, grown by molecular-beam epitaxy on GaAs substrates, have been investigated by means of deep-level transient spectroscopy (DLTS). Four of the traps revealed in the DLTS spectra, which displayed exponential kinetics for capture of charge carriers into the trap states, have been assigned to native point defects: Cd interstitial, Cd vacancy, Te antisite defect and a complex formed of the Te antisite and Cd vacancy. Three further traps, displaying logarithmic capture kinetics, have been ascribed to electron states of treading dislocations generated at the mismatched interface with the substrate and propagated through the CdTe layer.

  16. PVA TePla AG | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    search Name: PVA TePla AG Place: Asslar, Germany Zip: 35614 Product: Supplier of plants and equipment for vacuum systems, crystal-growing systems and plasma systems, some of...

  17. Summary of the TeV33 working group

    SciTech Connect

    Bagley, P.P.; Bieniosek, F.M.; Colestock, P.

    1996-10-01

    This summary of the TeV33 working group at Snowmass reports on work in the areas of Tevatron store parameters, the beam-beam interaction, Main Injector intensity (slip stacking), antiproton production, and electron cooling.

  18. Extracting Cu Diffusion Parameters in Polycrystalline CdTe

    SciTech Connect

    Akis, Richard; Brinkman, Daniel; Sankin, Igor; Fang, Tian; Guo, Da; Dragica, Vasileska; Ringhofer, Christian

    2014-06-13

    It is well known that Cu plays an important role in CdTe solar cell performance as a dopant. In this work, a finite-difference method is developed and used to simulate Cu diffusion in CdTe solar cells. In the simulations, which are done on a two-dimensional (2D) domain, the CdTe is assumed to be polycrystal-line, with the individual grains separated by grain boundaries. When used to fit experimental Cu concentration data, bulk and grain boundary diffusion coefficients and activation energies for CdTe can be extracted. In the past, diffusion coefficients have been typically obtained by fitting data to simple functional forms of limited validity. By doing full simulations, the simplifying assumptions used in those analytical models are avoided and diffusion parameters can thus be determined more accurately.

  19. Substrate CdTe Efficiency Improvements - Energy Innovation Portal

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Substrate CdTe Efficiency Improvements National Renewable Energy Laboratory Contact NREL About This Technology Publications: PDF Document Publication 11-28PCT Application as-published (984 KB) Technology Marketing Summary Thin film solar cells have been the focus of many research facilities in recent years that are working to decrease manufacturing costs and increase cell efficiency. Cadmium telluride (CdTe) has been well recognized as a promising photovoltaic material for thin film solar cells

  20. Suzanne G.E. te Velthuis | Argonne National Laboratory

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Suzanne G.E. te Velthuis Physicist Dr. Suzanne te Velthuis, physicist in the Neutron and X-ray Scattering group in the Materials Science Division, has been studying the physics of magnetic thin films and nanostructures throughout her career, focusing on using techniques such as neutron scattering, NMR, XMCD and magneto-optical Kerr microscopy. She was instrument scientist of the POSY1 polarized neutron reflectometer at IPNS from 2001 until the shutdown of that facility in 2009 and consequently

  1. Battle Mountain Band - Te-Moak: Solar Energy Park

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Battle Mountain Band - Te-Moak Chairman Joseph Holley and Vice-chairman Mark Oppenhein, Members Donna Hill, Delbert Holley, Lydia Johnson, and Lydell Oppenhein Solar Energy Park DOE/Te-Moak Grant EE0005632 Tribal Energy Program Review March 26, 2014 Presented By: Brenda Gilbert Program Manager 775-345-5261 Brenda@becnv.com Donna Hill Project Manager Battle Mountain Band 775-635-2004 coordinatorbmbc@hotmail.com Joe Bourg Chief Executive Officer Millennium Energy, LLC 303-526-2972

  2. High-quality CdTe films from nanoparticle precursors

    SciTech Connect

    Schulz, D.L.; Pehnt, M.; Urgiles, E.

    1996-05-01

    In this paper the authors demonstrate that nanoparticulate precursors coupled with spray deposition offers an attractive route into electronic materials with improved smoothness, density, and lower processing temperatures. Employing a metathesis approach, cadmium iodide was reacted with sodium telluride in methanol solvent, resulting in the formation of soluble NaI and insoluble CdTe nanoparticles. After appropriate chemical workup, methanol-capped CdTe colloids were isolated. CdTe thin film formation was achieved by spray depositing the nanoparticle colloids (25-75 {Angstrom} diameter) onto substrates at elevated temperatures (T = 280-440{degrees}C) with no further thermal treatment. These films were characterized by x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). Cubic CdTe phase formation was observed by XRD, with a contaminant oxide phase also detected. XPS analysis showed that CdTe films produced by this one-step method contained no Na or C and substantial O. AFM gave CdTe grain sizes of {approx}0.1-0.3 {mu}m for film sprayed at 400{degrees}C. A layer-by-layer film growth mechanism proposed for the one-step spray deposition of nanoparticle precursors will be discussed.

  3. Photodetectors using III-V nitrides

    DOEpatents

    Moustakas, Theodore D.

    1998-01-01

    A bandpass photodetector using a III-V nitride and having predetermined electrical properties. The bandpass photodetector detects electromagnetic radiation between a lower transition wavelength and an upper transition wavelength. That detector comprises two low pass photodetectors. The response of the two low pass photodetectors is subtracted to yield a response signal.

  4. Photodetectors using III-V nitrides

    DOEpatents

    Moustakas, T.D.

    1998-12-08

    A bandpass photodetector using a III-V nitride and having predetermined electrical properties is disclosed. The bandpass photodetector detects electromagnetic radiation between a lower transition wavelength and an upper transition wavelength. That detector comprises two low pass photodetectors. The response of the two low pass photodetectors is subtracted to yield a response signal. 24 figs.

  5. Phonon self-energy and origin of anomalous neutron scattering spectra in SnTe and PbTe thermoelectrics

    SciTech Connect

    Li, Chen [ORNL] [ORNL; Ma, Jie [ORNL] [ORNL; May, Andrew F [ORNL] [ORNL; Cao, Huibo [ORNL] [ORNL; Christianson, Andrew D [ORNL] [ORNL; Ehlers, Georg [ORNL] [ORNL; Singh, David J [ORNL] [ORNL; Sales, Brian C [ORNL] [ORNL; Delaire, Olivier A [ORNL] [ORNL

    2014-01-01

    The anharmonic lattice dynamics of rock-salt thermoelectric compounds SnTe and PbTe are investigated with inelastic neutron scattering (INS) and first-principles calculations. The experiments show that, surprisingly, although SnTe is closer to the ferroelectric instability, phonon spectra in PbTe exhibit a more anharmonic character. This behavior is reproduced in first-principles calculations of the temperature-dependent phonon self-energy. Our simulations reveal how the nesting of phonon dispersions induces prominent features in the self-energy, which account for the measured INS spectra and their temperature dependence. We establish that the phase-space for three-phonon scattering processes, rather than just the proximity to the lattice instability, is the mechanism determining the complex spectrum of the transverse-optical ferroelectric mode.

  6. Effects of Cu Diffusion from ZnTe:Cu/Ti Contacts on Carrier Lifetime of CdS/CdTe Thin Film Solar Cells: Preprint

    SciTech Connect

    Gessert, T. A.; Metzger, W. K.; Asher, S. E.; Young, M. R.; Johnston, S.; Dhere, R. G.; Duda, A.

    2008-05-01

    We study the performance of CdS/CdTe thin film PV devices processed with a ZnTe:Cu/Ti contact to investigate how carrier lifetime in the CdTe layer is affected by Cu diffusion from the contact.

  7. Local composition and carrier concentration in Pb0.7Ge0.3Te and Pb0.5Ge0.5Te alloys from 125Te NMR and microscopy

    SciTech Connect

    Levin, E M; Kramer, M J; Schmidt-Rohr, K

    2014-11-01

    Pb0.7Ge0.3Te and Pb0.5Ge0.5Te alloys, (i) quenched from 923 K or (ii) quenched and annealed at 573 K for 2 h, have been studied by 125Te NMR, X-ray diffraction, electron and optical microscopy, as well as energy dispersive spectroscopy. Depending on the composition and thermal treatment history, 125Te NMR spectra exhibit different resonance frequencies and spin-lattice relaxation times, which can be assigned to different phases in the alloy. Quenched and annealed Pb0.7Ge0.3Te alloys can be considered as solid solutions but are shown by NMR to have components with various carrier concentrations. Quenched and annealed Pb0.5Ge0.5Te alloys contain GeTe- and PbTe-based phases with different compositions and charge carrier concentrations. Based on the analysis of non-exponential 125Te NMR spin-lattice relaxation, the fractions and carrier concentrations of the various phases have been estimated. Our data show that alloying of PbTe with Ge results in the formation of chemically and electronically inhomogeneous systems. 125Te NMR can be used as an efficient probe to detect the local composition in equilibrium as well as non-equilibrium states, and to determine the local carrier concentrations in complex multiphase tellurides.

  8. Search for massive resonances in dijet systems containing jets tagged as W or Z boson decays in pp collisions at $ \\sqrt{s} $ = 8 TeV

    SciTech Connect

    Khachatryan, Vardan

    2014-08-29

    Our search is reported for massive resonances decaying into a quark and a vector boson (W or Z), or two vector bosons (WW, WZ, or ZZ). The analysis is performed on an inclusive sample of multijet events corresponding to an integrated luminosity of 19.7 fb-1, collected in proton-proton collisions at a centre-of-mass energy of 8 TeV with the CMS detector at the LHC. We found that the search uses novel jet-substructure identification techniques that provide sensitivity to the presence of highly boosted vector bosons decaying into a pair of quarks. Exclusion limits are set at a confidence level of 95% on the production of: (i) excited quark resonances q*decaying to qW and qZ for masses less than 3.2 TeV and 2.9 TeV, respectively, (ii) a Randall-Sundrum graviton GRS decaying into WW for masses below 1.2 TeV, and (iii) a heavy partner of the W boson W' decaying into WZ for masses less than 1.7 TeV. For the first time mass limits are set on W' ? WZ and GRS ? WW in the all-jets final state. The mass limits on q* ? qW, q* ? qZ, W' ? WZ, GRS ? WW are the most stringent to date. A model with a bulk graviton Gbulk that decays into WW or ZZ bosons is also studied.

  9. Search for massive resonances in dijet systems containing jets tagged as W or Z boson decays in pp collisions at $$ \\sqrt{s} $$ = 8 TeV

    DOE PAGES [OSTI]

    Khachatryan, Vardan

    2014-08-29

    Our search is reported for massive resonances decaying into a quark and a vector boson (W or Z), or two vector bosons (WW, WZ, or ZZ). The analysis is performed on an inclusive sample of multijet events corresponding to an integrated luminosity of 19.7 fb-1, collected in proton-proton collisions at a centre-of-mass energy of 8 TeV with the CMS detector at the LHC. We found that the search uses novel jet-substructure identification techniques that provide sensitivity to the presence of highly boosted vector bosons decaying into a pair of quarks. Exclusion limits are set at a confidence level of 95%more » on the production of: (i) excited quark resonances q*decaying to qW and qZ for masses less than 3.2 TeV and 2.9 TeV, respectively, (ii) a Randall-Sundrum graviton GRS decaying into WW for masses below 1.2 TeV, and (iii) a heavy partner of the W boson W' decaying into WZ for masses less than 1.7 TeV. For the first time mass limits are set on W' → WZ and GRS → WW in the all-jets final state. The mass limits on q* → qW, q* → qZ, W' → WZ, GRS → WW are the most stringent to date. A model with a “bulk” graviton Gbulk that decays into WW or ZZ bosons is also studied.« less

  10. Thermoelectric properties and nonstoichiometry of GaGeTe

    SciTech Connect

    Drasar, C.; Kucek, V.; Benes, L.; Lostak, P.; Vlcek, M.

    2012-09-15

    Polycrystalline samples of composition Ga{sub 1+x}Ge{sub 1-x}Te (x=-0.03 Division-Sign 0.07) and GaGeTe{sub 1-y} (y=-0.02 Division-Sign 0.02) were synthesized from elements of 5 N purity using a solid state reaction. The products of synthesis were identified by X-ray diffraction; phase purity and microstructure were examined by EDX/SEM. Samples for measurement of transport properties were prepared using hot-pressing. They were characterized by measurement of electrical conductivity, the Hall coefficient, and the Seebeck coefficient over a temperature range 80-480 K and of thermal conductivity over a temperature range 300-580 K. All samples show p-type conductivity. We discuss the influence of stoichiometry on the phase purity of the samples and on free carrier concentration. The investigation of thermoelectric properties shows that the power factor of these samples is low compared to state-of-the-art materials at room temperature but increases distinctly with temperature. - Graphical abstract: Structure and preparation of GaGeTe. Electrical conductivity {sigma}, the Hall coefficient R{sub H}, the Seebeck coefficient S and thermal conductivity {kappa} as a function of temperature for the Ga{sub 1.01}Ge{sub 0.99}Te{sub 0.99} sample. Highlights: Black-Right-Pointing-Pointer We explore thermoelectric and transport properties of Ga{sub 1+x}Ge{sub 1-x}Te and GaGeTe{sub 1-y}. Black-Right-Pointing-Pointer GaGeTe is p-type degenerate semiconductor; the hole concentration increase with x and y. Black-Right-Pointing-Pointer Maximum power factor {sigma}S{sup 2}=3.6 Multiplication-Sign 10{sup -4} Wm{sup -1} K{sup -2} at 475 K.

  11. III. PROGRAM-SPECIFIC COMPLIANCE SUPPLEMENTS

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    III. PROGRAM-SPECIFIC COMPLIANCE SUPPLEMENTS For fiscal year 2010, no DOE programs have compliance requirements that are distinct from the general compliance requirements included in Part II of this guidance (General Compliance Supplement). Therefore, audits of recipients and subrecipients with fiscal years ending in 2010 should be conducted in accordance with the compliance requirements included in Part II of this guidance. For fiscal years subsequent to 2010, program-specific compliance

  12. Chapter III: Modernizing the Electric Grid

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    3-34 QER Report: Energy Transmission, Storage, and Distribution Infrastructure | April 2015 Chapter III: Modernizing the Electric Grid QER Report: Energy Transmission, Storage, and Distribution Infrastructure | April 2015 4-1 Chapter IV This chapter addresses the role of infrastructure in ensuring U.S. energy security in a global marketplace. It first describes the evolution of the concept of U.S. energy security in response to interconnected global energy markets. It then discusses the security

  13. J. Taylor Childers III | Argonne National Laboratory

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    J. Taylor Childers III Assistant Physicist Education 2002 - 2007 University of Minnesota, PhD. in Physics 1998 - 2002 University of Kentucky, BS. in Physics Experience 2013 - present Assistant Physicist at Argonne National Lab, Chicago, IL, USA 2011 - 2013 Fellow at CERN, Geneva, Switzerland 2007 - 2011 Postdoctoral Researcher at Heidelberg University, Heidelberg, Germany Summary of Research I am an Assistant Physicist at Argonne National Laboratory in Chicago, USA. As a member of ATLAS, I am

  14. HVAC Technician III | Princeton Plasma Physics Lab

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    HVAC Technician III Department: Facilities Supervisor(s): Tom Ward Staff: TSS 4 Requisition Number: 1600764 Under the supervision of the General Lead Technician and Lead HVAC Technician, the incumbent will be responsible for the installation, preventative maintenance, troubleshooting and repair of various HVAC and refrigeration equipment; local HVAC control systems and ancillary support equipment; and will work with other groups within the Division and throughout the Laboratory to ensure

  15. Implementation of Division D, Titles III and V, and Division...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    and guidance for Division D, Titles III and V, and Division E, Title VII of the ... Implementation of Division D, Titles III and V, and Division E, Title VII of the ...

  16. PROJECT SELECTIONS FOR DOE PHASE III XLERATOR SMALL BUSINESS...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    PROJECT SELECTIONS FOR DOE PHASE III XLERATOR SMALL BUSINESS PROGRAM - pg 3 PROJECT SELECTIONS FOR DOE PHASE III XLERATOR SMALL BUSINESS PROGRAM - pg 3 PDF icon sbirphase3pg3.pdf...

  17. Integrated Biorefinery Research Facility (IBRF I-II) (Post CD...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Integrated Biorefinery Research Facility (IBRF I-II) (Post CD-4), EERE, Aug 2011 Integrated Biorefinery Research Facility (IBRF I-II) (Post CD-4), EERE, Aug 2011 PDF icon 000521 & ...

  18. Heterojunctions of model CdTe/CdSe mixtures

    DOE PAGES [OSTI]

    van Swol, Frank; Zhou, Xiaowang W.; Challa, Sivakumar R.; Martin, James E.

    2015-03-18

    We report on the strain behavior of compound mixtures of model group II-VI semiconductors. We use the Stillinger-Weber Hamiltonian that we recently introduced, specifically developed to model binary mixtures of group II-VI compounds such as CdTe and CdSe. We also employ molecular dynamics simulations to examine the behavior of thin sheets of material, bilayers of CdTe and CdSe. The lattice mismatch between the two compounds leads to a strong bending of the entire sheet, with about a 0.5 to 1° deflection between neighboring planes. To further analyze bilayer bending, we introduce a simple one-dimensional model and use energy minimization tomore » find the angle of deflection. The analysis is equivalent to a least-squares straight line fit. We consider the effects of bilayers which are asymmetric with respect to the thickness of the CdTe and CdSe parts. We thus learn that the bending can be subdivided into four kinds depending on the compressive/tensile nature of each outer plane of the sheet. We use this approach to directly compare our findings with experimental results on the bending of CdTe/CdSe rods. To reduce the effects of the lattice mismatch we explore diffuse interfaces, where we mix (i.e. alloy) Te and Se, and estimate the strain response.« less

  19. Heterojunctions of model CdTe/CdSe mixtures

    SciTech Connect

    van Swol, Frank; Zhou, Xiaowang W.; Challa, Sivakumar R.; Martin, James E.

    2015-03-18

    We report on the strain behavior of compound mixtures of model group IIVI semiconductors. We use the StillingerWeber Hamiltonian that we recently introduced, specifically developed to model binary mixtures of group IIVI compounds such as CdTe and CdSe. We also employ molecular dynamics simulations to examine the behavior of thin sheets of material, bilayers of CdTe and CdSe. The lattice mismatch between the two compounds leads to a strong bending of the entire sheet, with about a 0.5 to 1 deflection between neighboring planes. To further analyze bilayer bending, we introduce a simple one-dimensional model and use energy minimization to find the angle of deflection. The analysis is equivalent to a least-squares straight line fit. We consider the effects of bilayers which are asymmetric with respect to the thickness of the CdTe and CdSe parts. We thus learn that the bending can be subdivided into four kinds depending on the compressive/tensile nature of each outer plane of the sheet. We use this approach to directly compare our findings with experimental results on the bending of CdTe/CdSe rods. To reduce the effects of the lattice mismatch we explore diffuse interfaces, where we mix (i.e. alloy) Te and Se, and estimate the strain response.

  20. Heterojunctions of model CdTe/CdSe mixtures

    SciTech Connect

    van Swol, Frank; Zhou, Xiaowang W.; Challa, Sivakumar R.; Martin, James E.

    2015-03-18

    We report on the strain behavior of compound mixtures of model group II-VI semiconductors. We use the Stillinger-Weber Hamiltonian that we recently introduced, specifically developed to model binary mixtures of group II-VI compounds such as CdTe and CdSe. We also employ molecular dynamics simulations to examine the behavior of thin sheets of material, bilayers of CdTe and CdSe. The lattice mismatch between the two compounds leads to a strong bending of the entire sheet, with about a 0.5 to 1° deflection between neighboring planes. To further analyze bilayer bending, we introduce a simple one-dimensional model and use energy minimization to find the angle of deflection. The analysis is equivalent to a least-squares straight line fit. We consider the effects of bilayers which are asymmetric with respect to the thickness of the CdTe and CdSe parts. We thus learn that the bending can be subdivided into four kinds depending on the compressive/tensile nature of each outer plane of the sheet. We use this approach to directly compare our findings with experimental results on the bending of CdTe/CdSe rods. To reduce the effects of the lattice mismatch we explore diffuse interfaces, where we mix (i.e. alloy) Te and Se, and estimate the strain response.

  1. Raft River III Geothermal Project | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Development Project: Raft River III Geothermal Project Project Location Information Coordinates...

  2. The half-life of {sup 131g,m}Te

    SciTech Connect

    Ruivo, J. C.; Zamboni, C. B.; Oliveira, J. R. B.; Heder Medina, Nilberto

    2013-05-06

    In this work, the half-lives of {sup 131m}Te and {sup 131g}Te were measured. Radioactive sources of {sup 131}Te were obtained using the {sup 130}Te(n,{gamma}){sup 131}Te nuclear reaction. These nuclear parameters have been determined with a better confidence and accuracy than previously available: 18.89 {+-} 0.11 min and 33.18 {+-} 0.13 h, respectively. These results are quite helpful for new calculations that attempt to describe the low-lying levels in {sup 131}I from the decay of {sup 131g,m}Te.

  3. Growth, steady-state, and time-resolved photoluminescence study of CdTe/MgCdTe double heterostructures on InSb substrates using molecular beam epitaxy

    SciTech Connect

    DiNezza, Michael J.; Liu, Shi; Kirk, Alexander P.; Zhang, Yong-Hang; School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287 ; Zhao, Xin-Hao; School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287

    2013-11-04

    CdTe/MgCdTe double heterostructures (DHs) are grown on InSb substrates using molecular beam epitaxy and reveal strong photoluminescence with over double the intensity of a GaAs/AlGaAs DH with an identical layer structure design grown on GaAs. Time-resolved photoluminescence of the CdTe/MgCdTe DH gives a Shockley-Read-Hall recombination lifetime of 86 ns, which is more than one order of magnitude longer than that of typical polycrystalline CdTe films. These findings indicate that monocrystalline CdTe/MgCdTe DHs effectively reduce surface recombination, have limited nonradiative interface recombination, and are promising for solar cells that could reach power conversion efficiencies similar to that of GaAs.

  4. Resetting the Defect Chemistry in CdTe

    SciTech Connect

    Metzger, Wyatt K.; Burst, James; Albin, David; Colegrove, Eric; Moseley, John; Duenow, Joel; Farrell, Stuart; Moutinho, Helio; Reese, Matt; Johnston, Steve; Barnes, Teresa; Perkins, Craig; Guthrey, Harvey; Al-Jassim, Mowafak

    2015-06-14

    CdTe cell efficiencies have increased from 17% to 21% in the past three years and now rival polycrystalline Si [1]. Research is now targeting 25% to displace Si, attain costs less than 40 cents/W, and reach grid parity. Recent efficiency gains have come largely from greater photocurrent. There is still headroom to lower costs and improve performance by increasing open-circuit voltage (Voc) and fill factor. Record-efficiency CdTe cells have been limited to Voc <; 880 mV, whereas GaAs can attain Voc of 1.10 V with a slightly smaller bandgap [2,3]. To overcome this barrier, we seek to understand and increase lifetime and carrier concentration in CdTe. In polycrystalline structures, lifetime can be limited by interface and grain-boundary recombination, and attaining high carrier concentration is complicated by morphology.

  5. Current enhancement of CdTe-based solar cells

    SciTech Connect

    Paudel, Naba R.; Poplawsky, Jonathan D.; More, Karren Leslie; Yan, Yanfa

    2015-07-30

    We report on the realization of CdTe solar cell photocurrent enhancement using an n-type CdSe heterojunction partner sputtered on commercial SnO2/SnO2:F coated soda-lime glass substrates. With high-temperature close-space sublimation CdTe deposition followed by CdCl2 activation, this thin-film stack allows for substantial interdiffusion at the CdSe/CdTe interface facilitating a CdSexTe1-x alloy formation. The bowing effect causes a reduced optical bandgap of the alloyed absorber layer and, therefore, leads to current enhancement in the long-wavelength region and a decrease in open-circuit voltage (VOC). To overcome the VOC loss and maintain a high short-circuit current (JSC), the CdTe cell configuration has been modified using combined CdS:O/CdSe window layers. The new device structure has demonstrated enhanced collection from both short-and long-wavelength regions as well as a VOC improvement. With an optimized synthesis process, a small-area cell using CdS:O/CdSe window layer showed an efficiency of 15.2% with a VOC of 831 mV, a JSC of 26.3 mA/cm2, and a fill factor of 69.5%, measured under an AM1.5 illumination without antireflection coating. Furthermore, the results provide new directions for further improvement of CdTe-based solar cells.

  6. Synthesis and characterization of Bi-Te-Se thermoelectric materials

    SciTech Connect

    Tripathi, S. K.; Kumari, Ankita; Ridhi, R.; Kaur, Jagdish

    2015-08-28

    Bismuth Telluride (Bi{sub 2}Te{sub 3}) and its related alloys act as a promising thermoelectric material and preferred over other thermoelectric materials due to their high stability and efficiency under ambient conditions. In the present work, we have reported economical, environment friendly and low-temperature aqueous chemical method for the synthesis of Bi-Se-Te alloy. The prepared samples are characterized by X-Ray Diffraction to investigate the structural properties and UV-Visible spectroscopy for the spectroscopic analysis. The absorption spectrum reveals the sensitivity in the ultraviolet as well as in visible region.

  7. Indication of Te segregation in laser-irradiated ZnTe observed by in situ coherent-phonon spectroscopy

    SciTech Connect

    Shimada, Toru; Kamaraju, N.; Frischkorn, Christian; Wolf, Martin; Kampfrath, Tobias

    2014-09-15

    We irradiate a ZnTe single crystal with 10-fs laser pulses at a repetition rate of 80 MHz and investigate its resulting gradual modification by means of coherent-phonon spectroscopy. We observe the emergence of a phonon mode at about 3.6 THz whose amplitude and lifetime grow monotonously with irradiation time. The speed of this process depends sensitively on the pump-pulse duration. Our observations strongly indicate that the emerging phonon mode arises from a Te phase induced by multiphoton absorption of incident laser pulses. A potential application of our findings is laser-machining of microstructures in the bulk of a ZnTe crystal, a highly relevant electrooptic material.

  8. Energy Sources for Yotta-TeV Iceberg Showers (Conference) | SciTech...

    Office of Scientific and Technical Information (OSTI)

    Energy Sources for Yotta-TeV Iceberg Showers Citation Details In-Document Search Title: Energy Sources for Yotta-TeV Iceberg Showers You are accessing a document from the ...

  9. APT mass spectrometry and SEM data for CdTe solar cells

    DOE PAGES [OSTI]

    Li, Chen; Paudel, Naba R.; Yan, Yanfa; Pennycook, Stephen J.; Poplawsky, Jonathan D.; Guo, Wei

    2016-03-16

    Atom probe tomography (APT) data acquired from a CAMECA LEAP 4000 XHR for the CdS/CdTe interface for a non-CdCl2 treated CdTe solar cell as well as the mass spectrum of an APT data set including a GB in a CdCl2-treated CdTe solar cell are presented. Scanning electron microscopy (SEM) data showing the evolution of sample preparation for APT and scanning transmission electron microscopy (STEM) electron beam induced current (EBIC) are also presented. As a result, these data show mass spectrometry peak decomposition of Cu and Te within an APT dataset, the CdS/CdTe interface of an untreated CdTe solar cell, preparationmore » of APT needles from the CdS/CdTe interface in superstrate grown CdTe solar cells, and the preparation of a cross-sectional STEM EBIC sample.« less

  10. Pressure-induced Phase Transition in Thiol-capped CdTe Nanoparticles

    SciTech Connect

    Wu, F; Zaug, J; Young, C; Zhang, J Z

    2006-11-29

    Phase transitions for CdTe nanoparticles (NPs) under high pressure up to 37.0 GPa have been studied using fluorescence measurements. The phase transition from cinnarbar to rocksalt phase has been observed in CdTe NPs solution at 5.8 GPa, which is much higher than the phase transition pressure of bulk CdTe (3.8 GPa) and that of CdTe NPs in solid form (0.8 GPa). CdTe NPs solution therefore shows elevated phase transition pressure and enhanced stability against pressure compared with bulk CdTe and CdTe NPs in solid forms. The enhanced stability of CdTe NPs solution has been attributed to possible shape change in the phase transition and/or inhomogeneous strains in nanoparticle solutions.

  11. Probing TeV physics in the structure of the neutron (Technical...

    Office of Scientific and Technical Information (OSTI)

    Probing TeV physics in the structure of the neutron Citation Details In-Document Search Title: Probing TeV physics in the structure of the neutron You are accessing a document ...

  12. CdTe Thin Film Solar Cells and Modules Tutorial; NREL (National Renewable Energy Laboratory)

    SciTech Connect

    Albin, David S.

    2015-06-13

    This is a tutorial presented at the 42nd IEEE Photovoltaics Specialists Conference to cover the introduction, background, and updates on CdTe cell and module technology, including CdTe cell and module structure and fabrication.

  13. Current enhancement of CdTe-based solar cells (Journal Article...

    Office of Scientific and Technical Information (OSTI)

    Current enhancement of CdTe-based solar cells This content will become publicly available on July 30, 2016 Prev Next Title: Current enhancement of CdTe-based solar cells We ...

  14. Current enhancement of CdTe-based solar cells (Journal Article...

    Office of Scientific and Technical Information (OSTI)

    CdTe-based solar cells Citation Details In-Document Search This content will become publicly available on July 30, 2016 Title: Current enhancement of CdTe-based solar cells We ...

  15. Energy Sources for Yotta-TeV Iceberg Showers (Conference) | SciTech...

    Office of Scientific and Technical Information (OSTI)

    Energy Sources for Yotta-TeV Iceberg Showers Citation Details In-Document Search Title: Energy Sources for Yotta-TeV Iceberg Showers In late February of 2002, warming climate along ...

  16. First-principles study of roles of Cu and Cl in polycrystalline CdTe

    DOE PAGES [OSTI]

    Yang, Ji -Hui; Yin, Wan -Jian; Park, Ji -Sang; Metzger, Wyatt; Wei, Su -Huai

    2016-01-25

    In this study, Cu and Cl treatments are important processes to achieve high efficiency polycrystalline cadmium telluride (CdTe) solar cells, thus it will be beneficial to understand the roles they play in both bulk CdTe and CdTe grain boundaries (GBs). Using first-principles calculations, we systematically study Cu and Cl-related defects in bulk CdTe. We find that Cl has only a limited effect on improving p-type doping and too much Cl can induce deep traps in bulk CdTe, whereas Cu can enhance ptype doping of bulk CdTe. In the presence of GBs, we find that, in general, Cl and Cu willmore » prefer to stay at GBs, especially for those with Te-Te wrong bonds, in agreement with experimental observations.« less

  17. TeV gamma rays from blazars beyond z = 1 ? (Journal Article)...

    Office of Scientific and Technical Information (OSTI)

    TeV gamma rays from blazars beyond z 1 ? Citation Details In-Document Search Title: TeV gamma rays from blazars beyond z 1 ? Authors: Aharonian, Felix ; Essey, Warren ; ...

  18. CsBi4Te6: A High-Performance Thermoelectric Material for Low...

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    thermoelectric properties of CsBi(4)Te(6) appear to match or exceed those of Bi(2-x)Sb(x)Te(3-y)Se(y) alloys. URL: Link to article - National Center for Biotechnology Information

  19. Proceedings: Substation equipment diagnostics conference III. Proceedings

    SciTech Connect

    1996-03-01

    This Substation Equipment Diagnostics Conference III was held to review the status of transmission substation diagnostics by EPRI, as well as that of the universities, manufacturers, testing organizations, and other researchers. The papers presented were organized under three categories of diagnostics: Transformers, Miscellaneous Equipment, and Systems. A reception on the evening of the first day of the Conference provided an opportunity for the researchers, utilities and manufacturers to display their equipment for the attendees. Separate abstracts have been indexed into the database for articles from this conference.

  20. Consent Order of Dismissal, Section III

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    3 SRR-ESH-2013-00054 Revision 1 August 28, 2013 Page 1 of 6 Consent Order of Dismissal, Section III.7 Z-Area Saltstone Disposal Facility Permit General Condition B.5.a-h Information Permit Condition Requirement Estimated Value Updated Value Comments B.5 a) Cumulative process volume of salt waste disposed to date Not Applicable 7,845 kgals Vault 4, Cells B, D, E, F, H, J, K, L SDU 2, Cells 2A and 2B b) Process volume of saltstone grout disposed and vault/disposal unit location (including cell

  1. Consent Order of Dismissal, Section III

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    4 SRR-ESH-2014-00039 Revision 1 August 28, 2014 Page 1 of 6 Z-Area Saltstone Disposal Facility Permit General Condition B.5.a-h Information and Consent Order of Dismissal, Section III.7 Permit Condition Requirement Estimated Value Updated Value Comments B.5 a) Cumulative process volume of salt waste disposed to date Not Applicable 8,770 kgals Vault 4, Cells B, D, E, F, H, J, K, L SDU 2, Cells 2A and 2B SDU 5, Cell 5B b) Process volume of saltstone grout disposed and vault/disposal unit location

  2. Consent Order of Dismissal, Section III

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    4 SRR-ESH-2014-00076 Revision 1 Posted Date: December 2, 2014 Page 1 of 6 Z-Area Saltstone Disposal Facility Permit General Condition B.5.a-h Information and Consent Order of Dismissal, Section III.7 Permit Condition Requirement Estimated Value Updated Value Comments B.5 a) Cumulative process volume of salt waste disposed to date Not Applicable 9,066 kgal Vault 4, Cells B, D, E, F, H, J, K, L SDU 2, Cells 2A and 2B SDU 5, Cell 5B b) Process volume of saltstone grout disposed and vault/disposal

  3. Consent Order of Dismissal, Section III

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    4 SRR-ESH-2014-00113 Revision 1 Posted Date: March 2, 2015 Page 1 of 6 Z-Area Saltstone Disposal Facility Permit General Condition B.5.a-h Information and Consent Order of Dismissal, Section III.7 Permit Condition Requirement Estimated Value Updated Value Comments B.5 a) Cumulative process volume of salt waste disposed to date Not Applicable 9,894 kgal Vault 4, Cells B, D, E, F, H, J, K, L SDU 2, Cells 2A and 2B SDU 5, Cell 5B b) Process volume of saltstone grout disposed and vault/disposal unit

  4. Consent Order of Dismissal, Section III

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    4 SRR-ESH-2015-00014 Revision 1 Posted Date: May 29, 2015 Page 1 of 6 Z-Area Saltstone Disposal Facility Permit General Condition B.5.a-h Information and Consent Order of Dismissal, Section III.7 Permit Condition Requirement Estimated Value Updated Value Comments B.5 a) Cumulative process volume of salt waste disposed to date Not Applicable 9,894 kgal Vault 4, Cells B, D, E, F, H, J, K, L SDU 2, Cells 2A and 2B SDU 5, Cell 5B b) Process volume of saltstone grout disposed and vault/disposal unit

  5. Consent Order of Dismissal, Section III

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    5 SRR-ESH-2015-00110 Revision 1 Post Date: February 29, 2016 Page 1 of 6 Z-Area Saltstone Disposal Facility Permit General Condition B.5.a-h Information and Consent Order of Dismissal, Section III.7 Permit Condition Requirement Estimated Value Updated Value Comments B.5 a) Cumulative process volume of salt waste disposed to date Not Applicable 10, 722 kgal Vault 4, Cells B, D, E, F, H, J, K, L SDU 2, Cells 2A and 2B SDU 5, Cells 5A and 5B b) Process volume of saltstone grout disposed and

  6. Consent Order of Dismissal, Section III

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    5 SRR-ESH-2016-00025 Revision 1 Post Date: May 27, 2016 Page 1 of 6 Z-Area Saltstone Disposal Facility Permit General Condition B.5.a-h Information and Consent Order of Dismissal, Section III.7 Permit Condition Requirement Estimated Value Updated Value Comments B.5 a) Cumulative process volume of salt waste disposed to date Not Applicable 10, 744 kgal SDU 4, Cells B, D, E, F, H, J, K, L SDU 2, Cells A and B SDU 5, Cells A and B b) Process volume of saltstone grout disposed and vault/disposal

  7. Consent Order of Dismissal, Section III

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    6 SRR-ESH-2016-00052 Revision 1 Post Date: August 26, 2016 Page 1 of 6 Z-Area Saltstone Disposal Facility Permit General Condition B.5.a-h Information and Consent Order of Dismissal, Section III.7 Permit Condition Requirement Estimated Value Updated Value Comments B.5 a) Cumulative process volume of salt waste disposed to date Not Applicable 11,143 kgal SDU 4, Cells B, D, E, F, H, J, K, L SDU 2, Cells A and B SDU 5, Cells A and B b) Process volume of saltstone grout disposed and vault/disposal

  8. Consent Order of Dismissal, Section III

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Facility and Saltstone Disposal Facility Website Data - Second Quarter, Calendar Year 2016 SRR-ESH-2016-00068 Revision 1 Post Date: November 29, 2016 Page 1 of 6 Z-Area Saltstone Disposal Facility Permit General Condition B.5.a-h Information and Consent Order of Dismissal, Section III.7 Permit Condition Requirement Estimated Value Updated Value Comments B.5 a) Cumulative process volume of salt waste disposed to date Not Applicable 11,610 kgal SDU 4, Cells B, D, E, F, H, J, K, L SDU 2, Cells A

  9. Consent Order of Dismissal, Section III

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    6 SRR-ESH-2016-00093 Revision 0 Post Date: November 29, 2016 Page 1 of 6 Z-Area Saltstone Disposal Facility Permit General Condition B.5.a-h Information and Consent Order of Dismissal, Section III.7 Permit Condition Requirement Estimated Value Updated Value Comments B.5 a) Cumulative process volume of salt waste disposed to date Not Applicable 12,228 kgal SDU 4, Cells B, D, E, F, H, J, K, L SDU 2, Cells A and B SDU 5, Cells A and B b) Process volume of saltstone grout disposed and vault/disposal

  10. Consent Order of Dismissal, Section III

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    5 SRR-ESH-2015-00052 Revision 1 Post Date: August 28, 2015 Page 1 of 6 Z-Area Saltstone Disposal Facility Permit General Condition B.5.a-h Information and Consent Order of Dismissal, Section III.7 Permit Condition Requirement Estimated Value Updated Value Comments B.5 a) Cumulative process volume of salt waste disposed to date Not Applicable 9,948 kgal Vault 4, Cells B, D, E, F, H, J, K, L SDU 2, Cells 2A and 2B SDU 5, Cell 5B b) Process volume of saltstone grout disposed and vault/disposal unit

  11. Junction Evolution During Fabrication of CdS/CdTe Thin-film PV Solar Cells (Presentation)

    SciTech Connect

    Gessert, T. A.

    2010-09-01

    Discussion of the formation of CdTe thin-film PV junctions and optimization of CdTe thin-film PV solar cells.

  12. Proteome of Geobacter sulfurreducens grown with Fe(III) oxide or Fe(III) citrate as the electron acceptor.

    SciTech Connect

    Ding, Y-H R.; Hixson, Kim K.; Aklujkar, Ma; Lipton, Mary S.; Smith, Richard D.; Lovley, Derek R.; Mester, Tunde

    2008-12-01

    e(III) oxides are the most abundant source of reducible Fe(III) by microorganisms in most soils and sediments, yet few studies on the physiology of Fe(III)-reducing microorganisms during growth on Fe(III) oxide have been conducted because of the technical difficulties in working with cell growth and harvest in the presence of Fe(III) oxides. Geobacter sulfurreducens is a representative of the Geobacter species that predominate in a variety of subsurface environments in which Fe(III) oxide is important. In order to better understand the physiology of Geobacter species during growth on Fe(III) oxide, the proteome of G. sulfurreducens grown on Fe(III) oxide was compared with the proteome of cells grown with soluble Fe(III) citrate. Two-dimensional polyacrylamide gel electrophoresis (2-D PAGE) revealed 19 proteins that were more abundant during growth on Fe(III) oxide than on soluble Fe(III). These included proteins related to protein synthesis, electron transfer and energy production, oxidative stress, protein folding, outer membrane proteins, nitrogen metabolism and hypothetical proteins. Further analysis of the proteome with the accurate mass and time (AMT) tag method revealed additional proteins associated with growth on Fe(III) oxide. These included the outer-membrane c-type cytochrome, OmcS and OmcG, which genetic studies have suggested are required for Fe(III) oxide reduction. Furthermore, several other cytochromes, as yet unstudied, were detected to be significantly up regulated during growth on Fe(III) oxide and other proteins of unknown function were more abundant during growth on Fe(III) oxide than on soluble Fe(III). PilA, the structural protein for pili, which is required for Fe(III) oxide reduction, and other pilin-associated proteins were also more abundant during growth on Fe(III) oxide. Confirmation of the differential expression of proteins known to be important in Fe(III) oxide reduction was observed, and an additional number of previously

  13. Extraction Based on in situ Formation of Dithiocarbamate for Separation of Am(III) from Ln(III)

    SciTech Connect

    Miyashita, Sunao; Yanaga, Makoto; Okuno, Kenji; Suganuma, Hideo; Satoh, Isamu

    2007-07-01

    A new solvent extraction technique based on in situ extractant formation of dithiocarbamate derivatives was constructed for the purpose of separation of Am(III) from Ln(III). Ammonium salts of dithiocarbamate in this technique are formed during the extraction course by the reaction between secondary amines and carbon disulfide in organic phase. The effects of substituent of secondary amines against the behavior of in situ formation of dithiocarbamate and the distribution behaviors of Am(III) and Ln(III)(especially Eu(III)) into nitrobenzene phase using in situ formation of dithiocarbamate were investigated. It was revealed that amines containing substituent in {alpha} position of amine were not suited that for in situ extractant formation method. The values of separation factor of Am(III)/Eu(III) >10{sup 4} were obtained by the new method using five di-substituted amines/CS{sub 2}/nitrobenzene system. (authors)

  14. Sloan Digital Sky Survey III (SDSS-III), Data Release 8

    DOE Data Explorer

    Building on the legacy of the Sloan Digital Sky Survey (SDSS) and SDSS-II, the SDSS-III Collaboration is working to map the Milky Way, search for extrasolar planets, and solve the mystery of dark energy. SDSS-III's first release, Data Release 8 (DR8), became available in the first half of 2012. DR8 contains all the images ever taken by the SDSS telescope. Together, these images make up the largest color image of the sky ever made. A version of the DR8 image is shown to the right. DR8 also includes measurements for nearly 500 million stars, galaxies, and quasars, and spectra for nearly two million. All of DR8's images, spectra, and measurements are available to anyone online. You can browse through sky images, look up data for individual objects, or search for objects anywhere using any criteria. SDSS-III will collect data from 2008 to 2014, using the 2.5-meter telescope at Apache Point Observatory. SDSS-III consists of four surveys, each focused on a different scientific theme. These four surveys are: 1) Baryon Oscillation Spectroscopic Survey (BOSS); 2) SEGUE-2 (Sloan Extension for Galactic Understanding and Exploration); 3) The APO Galactic Evolution Experiment (APOGEE); and 4) The Multi-object APO Radial Velocity Exoplanet Large-area Survey (MARVELS). [Copied with edits from http://www.sdss3.org/index.php

  15. TeVeS gets caught on caustics

    SciTech Connect

    Contaldi, Carlo R.; Wiseman, Toby; Withers, Benjamin

    2008-08-15

    TeVeS uses a dynamical vector field with timelike unit-norm constraint to specify a preferred local frame. When matter moves slowly in this frame--the so-called quasistatic regime--modified Newtonian dynamics results. Theories with such vectors (such as Einstein-Aether) are prone to the vector dynamics forming singularities that render their classical evolution problematic. Here, we analyze the dynamics of the vector in TeVeS in various situations. We begin by analytically showing that the vacuum solution of TeVeS forms caustic singularities under a large class of physically reasonably initial perturbations. This shows the classical evolution of TeVeS appears problematic in the absence of matter. We then consider matter by investigating black hole solutions. We find large classes of new black hole solutions with static geometries, where the curves generated by the vector field are attracted to the black hole and may form caustics. We go on to consider the full dynamics with matter by numerically simulating, assuming spherical symmetry, the gravitational collapse of a scalar, and the evolution of an initially nearly static boson star. We find that in both cases our initial data evolves so that the vector field develops caustic singularities on a time scale of order the gravitational in-fall time. Having shown singularity formation is generic with or without matter, Bekenstein's original formulation of TeVeS appears dynamically problematic. We argue that by modifying the vector field kinetic terms to the more general form used by Einstein-Aether, this problem may be avoided.

  16. Reverse Monte Carlo simulation of Se{sub 80}Te{sub 20} and Se{sub 80}Te{sub 15}Sb{sub 5} glasses

    SciTech Connect

    Abdel-Baset, A. M.; Rashad, M.; Moharram, A. H.

    2013-12-16

    Two-dimensional Monte Carlo of the total pair distribution functions g(r) is determined for Se{sub 80}Te{sub 20} and Se{sub 80}Te{sub 15}Sb{sub 5} alloys, and then it used to assemble the three-dimensional atomic configurations using the reverse Monte Carlo simulation. The partial pair distribution functions g{sub ij}(r) indicate that the basic structure unit in the Se{sub 80}Te{sub 15}Sb{sub 5} glass is di-antimony tri-selenide units connected together through Se-Se and Se-Te chain. The structure of Se{sub 80}Te{sub 20} alloys is a chain of Se-Te and Se-Se in addition to some rings of Se atoms.

  17. On the electronic structure and thermoelectric properties of BiTeBr and BiTeI single crystals and of BiTeI with the addition of BiI{sub 3} and CuI

    SciTech Connect

    Kulbachinskii, Vladimir A.; Kytin, Vladimir G.; Kudryashov, Alexey A.; Kuznetsov, Alexei N.; Shevelkov, Andrei V.

    2012-09-15

    The electronic structures were calculated for BiTeBr and BiTeI using the density-functional theory approach and accounting for the strong spin-orbital interaction. Qualitatively, the band structures for two compounds are similar, showing strong mixing of the p states of all elements in vicinity of the Fermi level, with the band gaps of 0.595 and 0.478 eV for BiTeBr and BiTeI, respectively. The optimized crystal structures show a tendency for the Bi-X (X=Br, I) bond elongation compared to the Bi-Te one. Both compounds are intrinsic n-type semiconductors but display a metallic-like conductivity coupled to rather large thermopower, which is rationalized within the frames of the acoustic phonons scattering model. Because of larger thermopower BiTeBr exhibits a twice higher thermoelectric figure-of-merit near room temperature, ZT=0.17, compared to BiTeI. The addition of 1 mass% of BiI{sub 3} or CuI to BiTeI decreases the mobility of electrons by two orders of magnitude, leading to significantly lower electrical conductivity, but at the same time effectively reduces the thermal conductivity. The prospects of further enhancing the thermoelectric efficiency are briefly discussed. - Graphical abstract: View of the crystal structure of BiTeBr is shown in the figure The optimized crystal structures show a tendency for the Bi-X (X=Br, I) bond elongation compared to the Bi-Te one. The electronic structures were calculated for BiTeBr and BiTeI using the density-functional theory approach and accounting for the strong spin-orbital interaction. Qualitatively, the band structures for two compounds are similar, showing strong mixing of the p states of all elements in vicinity of the Fermi level, with the band gaps of 0.595 and 0.478 eV for BiTeBr and BiTeI, respectively. Both compounds are intrinsic n-type semiconductors but display a metallic-like conductivity coupled to rather large thermopower, which is rationalized within the frames of the acoustic phonons scattering model. The

  18. Superconducting Bi2Te: Pressure-induced universality in the (Bi2)m(Bi2Te3)n series

    DOE PAGES [OSTI]

    Stillwell, Ryan L.; Jeffries, Jason R.; Jenei, Zsolt; Weir, Samuel T.; Vohra, Yogesh K.

    2016-03-09

    Using high-pressure magnetotransport techniques we have discovered superconductivity in Bi2Te, a member of the infinitely adaptive (Bi2)m(Bi2Te3)n series, whose end members, Bi and Bi2Te3, can be tuned to display topological surface states or superconductivity. Bi2Te has a maximum Tc = 8.6 K at P = 14.5 GPa and goes through multiple high pressure phase transitions, ultimately collapsing into a bcc structure that suggests a universal behavior across the series. High-pressure magnetoresistance and Hall measurements suggest a semi-metal to metal transition near 5.4 GPa, which accompanies the hexagonal to intermediate phase transition seen via x-ray diffraction measurements. In addition, the linearitymore » of Hc2 (T) exceeds the Werthamer-Helfand-Hohenberg limit, even in the extreme spin-orbit scattering limit, yet is consistent with other strong spin-orbit materials. Furthermore, considering these results in combination with similar reports on strong spin-orbit scattering materials seen in the literature, we suggest the need for a new theory that can address the unconventional nature of their superconducting states.« less

  19. New μ-SnTe{sub 4} and μ-Sn{sub 2}Te{sub 6} ligands to transition metal:

    Office of Scientific and Technical Information (OSTI)

    Solvothermal syntheses and characterizations of zinc tellurostannates containing polyamine ligands (Journal Article) | SciTech Connect New μ-SnTe{sub 4} and μ-Sn{sub 2}Te{sub 6} ligands to transition metal: Solvothermal syntheses and characterizations of zinc tellurostannates containing polyamine ligands Citation Details In-Document Search Title: New μ-SnTe{sub 4} and μ-Sn{sub 2}Te{sub 6} ligands to transition metal: Solvothermal syntheses and characterizations of zinc tellurostannates

  20. Effect of Ag doping and annealing on thermoelectric properties of PbTe

    SciTech Connect

    Bala, Manju Tripathi, T. S.; Avasthi, D. K.; Asokan, K.; Gupta, Srashti

    2015-06-24

    The present study reveals that annealing Ag doped PbTe thin films enhance thermoelectric properties. Phase formation was identified by using X-ray diffraction measurement. Annealing increases the crystallinity of both undoped and Ag doped PbTe. Electrical resistivity and thermoelectric power measurements are done using four probe and bridge method respectively. The increase in thermoelectric power of Ag doped PbTe is 29 % in comparison to undoped PbTe and it further increases to 34 % after annealing at 250{sup o} C for 1 hour whereas thermoelectric power increases by 14 % on annealing undoped PbTe thin films at same temperature.

  1. Title III of the Defense Production Act | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Title III of the Defense Production Act Title III of the Defense Production Act Matthew Seaford presentation on Title III of the Defense Production Act at the Industry Roundtable. 2_seaford_roundtable.pdf (1.21 MB) More Documents & Publications A National Strategic Plan For Advanced Manufacturing Market Drivers for Biofuels Networking and Information Technology Research and Development Supplement to the President's Budget (February 2010)

  2. III-Nitride Nanowires: Emerging Materials for Lighting and Energy...

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    III-Nitride Nanowires: Emerging Materials for Lighting and Energy Applications March 20, ... Wang is a Challenge Leader in the Solid State Lighting Science Energy Frontier Research ...

  3. PROJECT SELECTIONS FOR DOE PHASE III XLERATOR SMALL BUSINESS...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    PHASE III XLERATOR SMALL BUSINESS PROGRAM Biomass Technologies: HarvestingDewatering Technology for Algal Biofuels Renewable Algal Energy, LLC (Kingsport, Tenn.) - Algal Biodiesel ...

  4. Chena Hot Springs GRED III Project: Final Report Geology, Petrology...

    OpenEI (Open Energy Information) [EERE & EIA]

    Springs GRED III Project: Final Report Geology, Petrology, Geochemistry, Hydrothermal Alteration, and Fluid Analyses Jump to: navigation, search OpenEI Reference LibraryAdd to...

  5. Multijunction III-V Photovoltaics Research | Department of Energy

    Energy.gov [DOE] (indexed site)

    DOE invests in multijunction III-V solar cell research to drive down the costs of the materials, manufacturing, tracking techniques, and concentration methods used with this ...

  6. Interfacial Chemistry of III-V Semiconductors for Photoelectrochemical...

    Office of Scientific and Technical Information (OSTI)

    Photoelectrochemical Water Splitting Citation Details In-Document Search Title: Interfacial Chemistry of III-V Semiconductors for Photoelectrochemical Water Splitting Authors: ...

  7. The coyote universe III: simulation suite and precision emulator...

    Office of Scientific and Technical Information (OSTI)

    simulation suite and precision emulator for the nonlinear matter power spectrum Citation Details In-Document Search Title: The coyote universe III: simulation suite and ...

  8. Dr. Calvin O. Butts, III | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Calvin O. Butts, III About Us Dr. Calvin O. Butts, III - President, State University of New York (SUNY) College at Old Westbury Dr. Calvin O. Butts, III Dr. Calvin O. Butts, III, is President of State University of New York, College at Old Westbury and Pastor of the renowned Abyssinian Baptist Church in New York City. Regularly sought by leaders in politics, business, and the media for his insight and opinions, he has had a pervasive impact across his career on such wide-ranging issues as

  9. NEPA Implementation Procedures: Appendices I, II, and III | Department...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Implementation Procedures: Appendices I, II, and III NEPA Implementation Procedures: ... agency compliance with the National Environmental Policy Act and the CEQ's regulations. ...

  10. SDSS-III: Massive Spectroscopic Surveys of the Distant Universe...

    Office of Scientific and Technical Information (OSTI)

    Massive Spectroscopic Surveys of the Distant Universe, the Milky Way Galaxy, and Extra-Solar Planetary Systems Citation Details In-Document Search Title: SDSS-III: Massive...

  11. Interfacial Chemistry of III-V Semiconductors for Photoelectrochemical...

    Office of Scientific and Technical Information (OSTI)

    Photoelectrochemical Water Splitting Citation Details In-Document Search Title: Interfacial Chemistry of III-V Semiconductors for Photoelectrochemical Water Splitting You are ...

  12. Diameter dependent thermoelectric properties of individual SnTe nanowires

    DOE PAGES [OSTI]

    Xu, E. Z.; Li, Z.; Martinez, J. A.; Sinitsyn, N.; Htoon, H.; Li, Nan; Swartzentruber, B.; Hollingsworth, J. A.; Wang, Jian; Zhang, S. X.

    2015-01-15

    The lead-free compound tin telluride (SnTe) has recently been suggested to be a potentially promising thermoelectric material because of its similar electronic band structure as the well-known lead telluride. Here we report on the first thermoelectric study of individual single crystalline SnTe nanowires (NWs) with different diameters ranging from ~200 to ~1000 nm. Measurements of thermopower S, electrical conductivity σ, and thermal conductivity κ were carried out on the same nanowires over a temperature range of 25 - 300 K. While σ does not show a strong diameter dependence, the thermopower increases by a factor of 2 when the nanowiremore » diameter is decreased from 1000 nm to 200 nm. The thermal conductivities of the measured NWs are only about half of that of the bulk SnTe, which may arise from the enhanced phonon-grain boundary and phonon-defect scatterings. Temperature dependent figure-of-merit ZT was determined and the maximum value at room temperature is ~3 times higher than what was obtained in bulk samples of comparable carrier density.« less

  13. Diameter dependent thermoelectric properties of individual SnTe nanowires

    SciTech Connect

    Xu, E. Z.; Li, Z.; Martinez, J. A.; Sinitsyn, N.; Htoon, H.; Li, Nan; Swartzentruber, B.; Hollingsworth, J. A.; Wang, Jian; Zhang, S. X.

    2015-01-15

    The lead-free compound tin telluride (SnTe) has recently been suggested to be a potentially promising thermoelectric material because of its similar electronic band structure as the well-known lead telluride. Here we report on the first thermoelectric study of individual single crystalline SnTe nanowires (NWs) with different diameters ranging from ~200 to ~1000 nm. Measurements of thermopower S, electrical conductivity σ, and thermal conductivity κ were carried out on the same nanowires over a temperature range of 25 - 300 K. While σ does not show a strong diameter dependence, the thermopower increases by a factor of 2 when the nanowire diameter is decreased from 1000 nm to 200 nm. The thermal conductivities of the measured NWs are only about half of that of the bulk SnTe, which may arise from the enhanced phonon-grain boundary and phonon-defect scatterings. Temperature dependent figure-of-merit ZT was determined and the maximum value at room temperature is ~3 times higher than what was obtained in bulk samples of comparable carrier density.

  14. CONVERSION EXTRACTION DESULFURIZATION (CED) PHASE III

    SciTech Connect

    James Boltz

    2005-03-01

    This project was undertaken to refine the Conversion Extraction Desulfurization (CED) technology to efficiently and economically remove sulfur from diesel fuel to levels below 15-ppm. CED is considered a generic term covering all desulfurization processes that involve oxidation and extraction. The CED process first extracts a fraction of the sulfur from the diesel, then selectively oxidizes the remaining sulfur compounds, and finally extracts these oxidized materials. The Department of Energy (DOE) awarded Petro Star Inc. a contract to fund Phase III of the CED process development. Phase III consisted of testing a continuous-flow process, optimization of the process steps, design of a pilot plant, and completion of a market study for licensing the process. Petro Star and the Degussa Corporation in coordination with Koch Modular Process Systems (KMPS) tested six key process steps in a 7.6-centimeter (cm) (3.0-inch) inside diameter (ID) column at gas oil feed rates of 7.8 to 93.3 liters per hour (l/h) (2.1 to 24.6 gallons per hour). The team verified the technical feasibility with respect to hydraulics for each unit operation tested and successfully demonstrated pre-extraction and solvent recovery distillation. Test operations conducted at KMPS demonstrated that the oxidation reaction converted a maximum of 97% of the thiophenes. The CED Process Development Team demonstrated that CED technology is capable of reducing the sulfur content of light atmospheric gas oil from 5,000-ppm to less than 15-ppm within the laboratory scale. In continuous flow trials, the CED process consistently produced fuel with approximately 20-ppm of sulfur. The process economics study calculated an estimated process cost of $5.70 per product barrel. The Kline Company performed a marketing study to evaluate the possibility of licensing the CED technology. Kline concluded that only 13 refineries harbored opportunity for the CED process. The Kline study and the research team's discussions with

  15. Quantum oscillations in a two-dimensional electron gas at the rocksalt/zincblende interface of PbTe/CdTe (111) heterostructures.

    SciTech Connect

    Zhang, Bingpo; Lu, Ping; Liu, Henan; Jiao, Lin; Ye, Zhenyu; Jaime, M.; Balakirev, F. F.; Yuan, Huiqiu; Wu, Huizhen; Pan, Wei; Zhang, Yong

    2015-06-05

    Quantum oscillations are observed in the 2DEG system at the interface of novel heterostructures, PbTe/CdTe (111), with nearly identical lattice parameters (aPbTe = 0.6462 nm, aCdTe = 0.648 nm) but very different lattice structures (PbTe: rock salt, CdTe: zinc blende). The 2DEG formation mechanism, a mismatch in the bonding configurations of the valence electrons at the interface, is uniquely different from the other known 2DEG systems. The aberration-corrected scanning transmission electron microscope (AC-STEM) characterization indicates an abrupt interface without cation interdiffusion due to a large miscibility gap between the two constituent materials. As a result, electronic transport measurements under magnetic field up to 60 T, with the observation of Landau level filling factor ν = 1, unambiguously reveal a π Berry phase, suggesting the Dirac Fermion nature of the 2DEG at the heterostructure interface, and the PbTe/CdTe heterostructure being a new candidate for 2D topological crystalline insulators.

  16. Quantum oscillations in a two-dimensional electron gas at the rocksalt/zincblende interface of PbTe/CdTe (111) heterostructures

    SciTech Connect

    Zhang, Bingpo; Lu, Ping; Liu, Henan; Jiao, Lin; Ye, Zhenyu; Jaime, M.; Balakirev, F. F.; Yuan, Huiqiu; Wu, Huizhen; Pan, Wei; Zhang, Yong

    2015-06-05

    Quantum oscillations are observed in the 2DEG system at the interface of novel heterostructures, PbTe/CdTe (111), with nearly identical lattice parameters (aPbTe = 0.6462 nm, aCdTe = 0.648 nm) but very different lattice structures (PbTe: rock salt, CdTe: zinc blende). The 2DEG formation mechanism, a mismatch in the bonding configurations of the valence electrons at the interface, is uniquely different from the other known 2DEG systems. The aberration-corrected scanning transmission electron microscope (AC-STEM) characterization indicates an abrupt interface without cation interdiffusion due to a large miscibility gap between the two constituent materials. As a result, electronic transport measurements under magnetic field up to 60 T, with the observation of Landau level filling factor ν = 1, unambiguously reveal a π Berry phase, suggesting the Dirac Fermion nature of the 2DEG at the heterostructure interface, and the PbTe/CdTe heterostructure being a new candidate for 2D topological crystalline insulators.

  17. Quantum oscillations in a two-dimensional electron gas at the rocksalt/zincblende interface of PbTe/CdTe (111) heterostructures

    DOE PAGES [OSTI]

    Zhang, Bingpo; Lu, Ping; Liu, Henan; Jiao, Lin; Ye, Zhenyu; Jaime, M.; Balakirev, F. F.; Yuan, Huiqiu; Wu, Huizhen; Pan, Wei; et al

    2015-06-05

    Quantum oscillations are observed in the 2DEG system at the interface of novel heterostructures, PbTe/CdTe (111), with nearly identical lattice parameters (aPbTe = 0.6462 nm, aCdTe = 0.648 nm) but very different lattice structures (PbTe: rock salt, CdTe: zinc blende). The 2DEG formation mechanism, a mismatch in the bonding configurations of the valence electrons at the interface, is uniquely different from the other known 2DEG systems. The aberration-corrected scanning transmission electron microscope (AC-STEM) characterization indicates an abrupt interface without cation interdiffusion due to a large miscibility gap between the two constituent materials. As a result, electronic transport measurements under magneticmore » field up to 60 T, with the observation of Landau level filling factor ν = 1, unambiguously reveal a π Berry phase, suggesting the Dirac Fermion nature of the 2DEG at the heterostructure interface, and the PbTe/CdTe heterostructure being a new candidate for 2D topological crystalline insulators.« less

  18. Dynamic conductivity of the bulk states of n-type HgTe/CdTe quantum well topological insulator

    SciTech Connect

    Chen, Qinjun; Sanderson, Matthew; Cao, J. C.; Zhang, Chao

    2014-11-17

    We theoretically studied the frequency-dependent current response of the bulk state of topological insulator HgTe/CdTe quantum well. The optical conductivity is mainly due to the inter-band process at high frequencies. At low frequencies, intra-band process dominates with a dramatic drop to near zero before the inter-band contribution takes over. The conductivity decreases with temperature at low temperature and increases with temperature at high temperature. The transport scattering rate has an opposite frequency dependence in the low and high temperature regime. The different frequency dependence is due to the interplay of the carrier-impurity scattering and carrier population near the Fermi surface.

  19. Design of epitaxial CdTe solar cells on InSb substrates

    DOE PAGES [OSTI]

    Song, Tao; Kanevce, Ana; Sites, James R.

    2015-11-01

    Epitaxial CdTe has been shown by others to have a radiative recombination rate approaching unity, high carrier concentration, and low defect density. It has, therefore, become an attractive candidate for high-efficiency solar cells, perhaps becoming competitive with GaAs. The choice of substrate is a key design feature for epitaxial CdTe solar cells, and several possibilities (CdTe, Si, GaAs, and InSb) have been investigated by others. All have challenges, and these have generally been addressed through the addition of intermediate layers between the substrate and CdTe absorber. InSb is an attractive substrate choice for CdTe devices, because it has a closemore » lattice match with CdTe, it has low resistivity, and it is easy to contact. However, the valence-band alignment between InSb and p-type CdTe, which can both impede hole current and enhance forward electron current, is not favorable. Three strategies to address the band-offset problem are investigated by numerical simulation: heavy doping of the back part of the CdTe layer, incorporation of an intermediate CdMgTe or CdZnTe layer, and the formation of an InSb tunnel junction. Lastly, wach of these strategies is predicted to be helpful for higher cell performance, but a combination of the first two should be most effective.« less

  20. Design of epitaxial CdTe solar cells on InSb substrates

    SciTech Connect

    Song, Tao; Kanevce, Ana; Sites, James R.

    2015-11-01

    Epitaxial CdTe has been shown by others to have a radiative recombination rate approaching unity, high carrier concentration, and low defect density. It has, therefore, become an attractive candidate for high-efficiency solar cells, perhaps becoming competitive with GaAs. The choice of substrate is a key design feature for epitaxial CdTe solar cells, and several possibilities (CdTe, Si, GaAs, and InSb) have been investigated by others. All have challenges, and these have generally been addressed through the addition of intermediate layers between the substrate and CdTe absorber. InSb is an attractive substrate choice for CdTe devices, because it has a close lattice match with CdTe, it has low resistivity, and it is easy to contact. However, the valence-band alignment between InSb and p-type CdTe, which can both impede hole current and enhance forward electron current, is not favorable. Three strategies to address the band-offset problem are investigated by numerical simulation: heavy doping of the back part of the CdTe layer, incorporation of an intermediate CdMgTe or CdZnTe layer, and the formation of an InSb tunnel junction. Lastly, wach of these strategies is predicted to be helpful for higher cell performance, but a combination of the first two should be most effective.

  1. Neptunium Binding Kinetics with Arsenazo(III)

    SciTech Connect

    Leigh R. Martin; Aaron T. Johnson; Stephen P. Mezyk

    2014-08-01

    This document has been prepared to meet FCR&D level 2 milestone M2FT-14IN0304021, “Report on the results of actinide binding kinetics with aqueous phase complexants” This work was carried out under the auspices of the Thermodynamics and Kinetics of Advanced Separations Systems FCR&D work package. The report details kinetics experiments that were performed to measure rates of aqueous phase complexation for pentavalent neptunium with the chromotropic dye Arsenazo III (AAIII). The studies performed were designed to determine how pH, ionic strength and AAIII concentration may affect the rate of the reaction. A brief comparison with hexavalent neptunium is also made. It was identified that as pH was increased the rate of reaction also increased, however increasing the ionic strength and concentration of AAIII had the opposite effect. Interestingly, the rate of reaction of Np(VI) with AAIII was found to be slower than that of the Np(V) reaction.

  2. Magnetic Fields in Population III Star Formation

    SciTech Connect

    Turk, Matthew J.; Oishi, Jeffrey S.; Abel, Tom; Bryan, Greg

    2012-02-22

    We study the buildup of magnetic fields during the formation of Population III star-forming regions, by conducting cosmological simulations from realistic initial conditions and varying the Jeans resolution. To investigate this in detail, we start simulations from identical initial conditions, mandating 16, 32 and 64 zones per Jeans length, and studied the variation in their magnetic field amplification. We find that, while compression results in some amplification, turbulent velocity fluctuations driven by the collapse can further amplify an initially weak seed field via dynamo action, provided there is sufficient numerical resolution to capture vortical motions (we find this requirement to be 64 zones per Jeans length, slightly larger than, but consistent with previous work run with more idealized collapse scenarios). We explore saturation of amplification of the magnetic field, which could potentially become dynamically important in subsequent, fully-resolved calculations. We have also identified a relatively surprising phenomena that is purely hydrodynamic: the higher-resolved simulations possess substantially different characteristics, including higher infall-velocity, increased temperatures inside 1000 AU, and decreased molecular hydrogen content in the innermost region. Furthermore, we find that disk formation is suppressed in higher-resolution calculations, at least at the times that we can follow the calculation. We discuss the effect this may have on the buildup of disks over the accretion history of the first clump to form as well as the potential for gravitational instabilities to develop and induce fragmentation.

  3. Post-Growth Annealing of Bridgman-grown CdZnTe and CdMnTe Crystals for Room-temperature Nuclear Radiation Detectors

    DOE PAGES [OSTI]

    Egarievwe, Stephen U.; Yang, Ge; Egarievwe, Alexander; Okwechime, Ifechukwude O.; Gray, Justin; Hales, Zaveon M.; Hossain, Anwar; Camarda, Guiseppe S.; Bolotnikov, Aleksey E.; James, Ralph B.

    2015-02-11

    Bridgman-grown cadmium zinc telluride (CdZnTe or CZT) and cadmium manganese telluride (CdMnTe or CMT) crystals often have Te inclusions that limit their performances as X-ray- and gamma-ray-detectors. We present here the results of post-growth thermal annealing aimed at reducing and eliminating Te inclusions in them. In a 2D analysis, we observed that the sizes of the Te inclusions declined to 92% during a 60-h annealing of CZT at 510 °C under Cd vapor. Further, tellurium inclusions were eliminated completely in CMT samples annealed at 570 °C in Cd vapor for 26 h, whilst their electrical resistivity fell by an ordermore » of 102. During the temperature-gradient annealing of CMT at 730 °C and an 18 °C/cm temperature gradient for 18 h in a vacuum of 10-5 mbar, we observed the diffusion of Te from the sample, causing a reduction in size of the Te inclusions. For CZT samples annealed at 700 °C in a 10 °C/cm temperature gradient, we observed the migration of Te inclusions from a low-temperature region to a high one at 0.022 μm/s. During the temperature-gradient annealing of CZT in a vacuum of 10-5 mbar at 570 °C and 30 °C/cm for 18 h, some Te inclusions moved toward the high-temperature side of the wafer, while other inclusions of the same size, i.e., 10 µm in diameter, remained in the same position. These results show that the migration, diffusion, and reaction of Te with Cd in the matrix of CZT- and CMT-wafers are complex phenomena that depend on certain conditions.« less

  4. Inter-band optoelectronic properties in quantum dot structure of low band gap III-V semiconductors

    SciTech Connect

    Dey, Anup; Maiti, Biswajit; Chanda, Debasree

    2014-04-14

    A generalized theory is developed to study inter-band optical absorption coefficient (IOAC) and material gain (MG) in quantum dot structures of narrow gap III-V compound semiconductor considering the wave-vector (k{sup ?}) dependence of the optical transition matrix element. The band structures of these low band gap semiconducting materials with sufficiently separated split-off valance band are frequently described by the three energy band model of Kane. This has been adopted for analysis of the IOAC and MG taking InAs, InSb, Hg{sub 1?x}Cd{sub x}Te, and In{sub 1?x}Ga{sub x}As{sub y}P{sub 1?y} lattice matched to InP, as example of IIIV compound semiconductors, having varied split-off energy band compared to their bulk band gap energy. It has been found that magnitude of the IOAC for quantum dots increases with increasing incident photon energy and the lines of absorption are more closely spaced in the three band model of Kane than those with parabolic energy band approximations reflecting the direct the influence of energy band parameters. The results show a significant deviation to the MG spectrum of narrow-gap materials having band nonparabolicity compared to the parabolic band model approximations. The results reflect the important role of valence band split-off energies in these narrow gap semiconductors.

  5. Ternary eutectic growth of nanostructured thermoelectric Ag-Pb-Te materials

    SciTech Connect

    Wu, Hsin-jay; Chen, Sinn-wen; Foo, Wei-jian; Jeffrey Snyder, G.

    2012-07-09

    Nanostructured Ag-Pb-Te thermoelectric materials were fabricated by unidirectionally solidifying the ternary Ag-Pb-Te eutectic and near-eutectic alloys using the Bridgeman method. Specially, the Bridgman-grown eutectic alloy exhibited a partially aligned lamellar microstructure, which consisted of Ag{sub 5}Te{sub 3} and Te phases, with additional 200-600 nm size particles of PbTe. The self-assembled interfaces altered the thermal and electronic transport properties in the bulk Ag-Pb-Te eutectic alloy. Presumably due to phonon scattering from the nanoscale microstructure, a low thermal conductivity ({kappa} = 0.3 W/mK) was achieved of the eutectic alloy, leading to a zT peak of 0.41 at 400 K.

  6. A W' boson near 2 TeV: Predictions for run 2 of the LHC

    SciTech Connect

    Dobrescu, Bogdan A.; Liu, Zhen

    2015-11-20

    We present a renormalizable theory that includes a W' boson of mass in the 1.8–2 TeV range, which may explain the excess events reported by the ATLAS Collaboration in a WZ final state, and by the CMS Collaboration in e+e jj, Wh0, and jj final states. The W' boson couples to right-handed quarks and leptons, including Dirac neutrinos with TeV-scale masses. This theory predicts a Z' boson of mass in the 3.4–4.5 TeV range. The cross section times branching fractions for the narrow Z' dijet and dilepton peaks at the 13 TeV LHC are 10 and 0.6 fb, respectively, for MZ'=3.4 TeV, and an order of magnitude smaller for MZ'=4.5 TeV.

  7. A W' boson near 2 TeV: Predictions for run 2 of the LHC

    DOE PAGES [OSTI]

    Dobrescu, Bogdan A.; Liu, Zhen

    2015-11-20

    We present a renormalizable theory that includes a W' boson of mass in the 1.8–2 TeV range, which may explain the excess events reported by the ATLAS Collaboration in a WZ final state, and by the CMS Collaboration in e+e– jj, Wh0, and jj final states. The W' boson couples to right-handed quarks and leptons, including Dirac neutrinos with TeV-scale masses. This theory predicts a Z' boson of mass in the 3.4–4.5 TeV range. The cross section times branching fractions for the narrow Z' dijet and dilepton peaks at the 13 TeV LHC are 10 and 0.6 fb, respectively, formore » MZ'=3.4 TeV, and an order of magnitude smaller for MZ'=4.5 TeV.« less

  8. The Effect of Structural Vacancies on the Thermoelectric Properties of (Cu2Te)1-x(Ga2Te3)x

    SciTech Connect

    Ye, Zuxin; Cho, Jung Y; Tessema, Misle; Salvador, James R.; Waldo, Richard; Wang, Hsin; Cai, Wei

    2013-01-01

    We have studied the effects of structural vacancies on the thermoelectric properties of the ternary compounds (Cu2Te)1-x(Ga2Te3)x (x = 0.5, 0.55, 0.571, 0.6, 0.625, 0.667 and 0.75), which are solid solutions found in the pseudo-binary phase diagram for Cu2Te and Ga2Te3. This system possesses tunable structural vacancy concentrations. The x= 0.5 phase, CuGaTe2, is nominally devoid of structural vacancies, while the rest of the compounds contain varying amounts of these features, and the volume density of vacancies increases with Ga2Te3 content. The sample with x = 0.5, 0.55, 0.571, 0.6, 0.625 crystallize in the chalcopyrite structure while the x = 0.667 and 0.75 adopt the Ga2Te3 defect zinc blende structure. Strong scattering of heat carrying phonons by structural defects, leads to the reduction of thermal conductivity, which is beneficial to the thermoelectric performance of materials. On the other hand, these defects also scatter charge carriers and reduce the electrical conductivity. All the samples investigated are p-type semiconductors as inferred by the signs of their respective Hall (RH) and Seebeck (S) coefficients. The structural vacancies were found to scatter phonons strongly, while a combination of increased carrier concentration, and vacancies decreases the Hall mobility ( H), degrading the overall thermoelectric performance. The room temperature H drops from 90 cm2/V s for CuGaTe2 to 13 cm2/V s in Cu9Ga11Te21 and 4.6 cm2/V s in CuGa3Te5. The low temperature thermal conductivity decreases significantly with higher Ga2Te3 concentrations (higher vacancy concentration) due to increased point defect scattering which dominate thermal resistance terms. At high temperatures, the dependence of thermal conductivity on the Ga2Te3 content is less significant. The presence of strong Umklapp scattering leads to low thermal conductivity at high temperatures for all samples investigated. The highest ZT among the samples in this study was found for the defect-free CuGaTe

  9. Adsorptive separation of rhodium(III) using Fe(III)-templated oxine type of chemically modified chitosan

    SciTech Connect

    Alam, M.S.; Inoue, Katsutoshi; Yoshizuka, Kazuharu; Ishibashi, Hideaki

    1998-03-01

    The oxine type of chemically modified chitosan was prepared by the template crosslinking method using Fe(III) as a template ion. Batchwise adsorption of rhodium(III) on this chemically modified chitosan was examined from chloride media in the absence and presence of a large amount of tin(II). It was observed that the Fe(III)-templated oxine type of chemically modified chitosan shows better performance for rhodium adsorption than that of the original chitosan. When Sn(II) is absent from the solution, Rh(III) is hardly adsorbed on the modified chitosan and the order of selectivity of the adsorption of Rh(III), Pt(IV), and Cu(II) was found to be Pt(IV) > Cu(II) {approx} Rh(III). On the other hand, adsorption of rhodium is significantly increased in the presence of Sn(II) and the selectivity order of the adsorption was drastically changed to Rh(III) > Pt(IV) {much_gt} Cu(II), which ensures selective separation of Rh(III) from their mixture. Adsorption of Rh(III) increases with an increase in the concentration of Sn(II) in the aqueous solution, and maximum adsorption is achieved at a molar ratio, [Sn]/[Rh], of >6. The adsorption of Rh(III) decreases at a high concentration of hydrochloric acid. The maximum adsorption capacity was evaluated to be 0.92 mol/kg-dry adsorbent. Stripping tests of rhodium from the loaded chemically modified chitosan were carried out using different kinds of stripping agents containing some oxidizing agent. The maximum stripping of rhodium under these experimental conditions was found to be 72.5% by a single contact with 0.5 M HCl + 8 M HNO{sub 3}.

  10. Choice of Substrate Material for Epitaxial CdTe Solar Cells

    SciTech Connect

    Song, Tao; Kanevce, Ana; Sites, James R.

    2015-06-14

    Epitaxial CdTe with high quality, low defect density, and high carrier concentration should in principle yield high-efficiency photovoltaic devices. However, insufficient effort has been given to explore the choice of substrate for high-efficiency epitaxial CdTe solar cells. In this paper, we use numerical simulations to investigate three crystalline substrates: silicon (Si), InSb, and CdTe each substrate material are generally discussed.

  11. High Efficiency Single Crystal CdTe Solar Cells: November 19, 2009 - January 31, 2011

    SciTech Connect

    Carmody, M.; Gilmore, A.

    2011-05-01

    The goal of the program was to develop single crystal CdTe-based top cells grown on Si solar cells as a platform for the subsequent manufacture of high efficiency tandem cells for CPV applications. The keys to both the single junction and the tandem junction cell architectures are the ability to grow high quality single-crystal CdTe and CdZnTe layers on p-type Si substrates, to dope the CdTe and CdZnTe controllably, both n and p-type, and to make low resistance ohmic front and back contacts. EPIR demonstrated the consistent MBE growth of CdTe/Si and CdZnTe/Si having high crystalline quality despite very large lattice mismatches; epitaxial CdTe/Si and CdZnTe/Si consistently showed state-of-the-art electron mobilities and good hole mobilities; bulk minority carrier recombination lifetimes of unintentionally p-doped CdTe and CdZnTe grown by MBE on Si were demonstrated to be consistently of order 100 ns or longer; desired n- and p-doping levels were achieved; solar cell series specific resistances <10 ?-cm2 were achieved; A single-junction solar cell having a state-of-the-art value of Voc and a unverified 16.4% efficiency was fabricated from CdZnTe having a 1.80 eV bandgap, ideal for the top junction in a tandem cell with a Si bottom junction.

  12. Crystal chemistry peculiarities of Cs{sub 2}Te{sub 4}O{sub 12}

    SciTech Connect

    Hamani, David; Mirgorodsky, Andrei; Masson, Olivier; Merle-Mejean, Therese; Colas, Maggy; Smirnov, Mikhael; Thomas, Philippe

    2011-03-15

    The Raman and IR-absorption spectra of the Cs{sub 2}Te{sub 4}O{sub 12} lattice are first recorded and interpreted. Extraordinary features observed in the structure and Raman spectra of Cs{sub 2}Te{sub 4}O{sub 12} are analyzed by using ab initio and lattice-dynamical model calculations. This compound is specified as a caesium-tellurium tellurate Cs{sub 2}Te{sup IV}(Te{sup VI}O{sub 4}){sub 3} in which Te{sup IV} atoms transfer their 5p electrons to [Te{sup VI}O{sub 4}]{sub 3}{sup 6-} tellurate anions, thus fulfilling (jointly with Cs atoms) the role of cations. The Te{sup VI}-O-Te{sup VI} bridge vibration Raman intensity is found abnormally weak, which is reproduced by model treatment including the Cs{sup +} ion polarizability properties in consideration. -- Graphical abstract: Two versions of the BPM estimations of the Raman intensity for the Cs{sub 2}Te{sub 4}O{sub 12} lattice vibrations: (a) without including effects of the Cs-O bonds and (b) including the above mentioned effects. Experimentally observed peaks are characterized by their frequency positions. Display Omitted Research highlights: > Extraordinary features observed in the structure and Raman spectra of Cs{sub 2}Te{sub 4}O{sub 12}. > Ab initio and lattice-dynamical model calculations. > Abnormally weak Raman intensities of the symmetric Te{sup VI}-O-Te{sup VI} bridge. > The monovalent Cs{sup +} cations profoundly influence the polarizability properties.

  13. Preparation and properties of evaporated CdTe films compared with single crystal CdTe. Progress report No. 2, February 1-April 30, 1981

    SciTech Connect

    Bube, R H

    1981-01-01

    The design, construction and testing of the hot-wall vacuum evaporation system is proceeding on schedule. The vacuum system, a Varian 3118 diffusion pump system, has been installed and tested. A calculation of the optimum possible efficiency for an n-p CdTe homojunction indicates a value of 14%. A complete background is given on the growth of over fifty CdTe single crystals at Stanford, the last four of which were grown as part of this program. Use of crystal regrowth and vibration during growth both increase crystal quality. Higher electrical activity of phosphorus acceptors in CdTe is achieved when 0.1% excess Te is used in place of 0.5% excess Te. Careful characterization of boules grown for this program are underway, using Hall effect or capacitance-voltage data on selected samples. Initial investigation of the properties of grain boundaries in p-type CdTe : P crystals indicates a grain boundary height of 0.44 eV unaffected by illumination. These results suggest that grain boundaries are more strongly pinned in p-type than in n-type CdTe.

  14. Analysis of Surface Chemistry and Detector Performance of Chemically Process CdZnTe crystals

    SciTech Connect

    HOSSAIN A.; Yang, G.; Sutton, J.; Zergaw, T.; Babalola, O. S.; Bolotnikov, A. E.; Camarda. ZG. S.; Gul, R.; Roy, U. N., and James, R. B.

    2015-10-05

    The goal is to produce non-conductive smooth surfaces for fabricating low-noise and high-efficiency CdZnTe devices.

  15. PROJECT PROFILE: Interface Science and Engineering for Reliable, High Efficiency CdTe

    Energy.gov [DOE]

    While crystalline silicon accounted for two thirds of the PV market in 2014, cadmium telluride (CdTe) photovoltaic (PV) modules are becoming increasingly competitive with continued improvements in efficiency and reduction in price. This project will contribute to enabling 24% efficient CdTe cells by improving surface and interface recombination in the devices. Surface and interface recombination, which is the loss of photo-generated carriers before they are collected, becomes more detrimental to CdTe device performance as carrier lifetime increases. This project will develop effective surface passivation for CdTe and carrier selective contacts for higher efficiency, improved reproducibility, and increased stability.

  16. Nanoscale imaging of photocurrent and efficiency in CdTe solar...

    Office of Scientific and Technical Information (OSTI)

    cells The local collection characteristics of grain interiors and grain boundaries in thin film CdTe polycrystalline solar cells are investigated using scanning photocurrent...

  17. Probing TeV physics in the structure of the neutron (Technical...

    Office of Scientific and Technical Information (OSTI)

    Technical Report: Probing TeV physics in the structure of the neutron Citation Details ... Sponsoring Org: LDRD; USDOE Country of Publication: United States Language: English ...

  18. ON THE ENERGY SPECTRA OF GeV/TeV COSMIC RAY LEPTONS (Journal...

    Office of Scientific and Technical Information (OSTI)

    The models rely on either dark matter annihilationdecay or specific nearby astrophysical ... is the Klein-Nishina suppression of the electron cooling rate around TeV energies. ...

  19. On the Energy Spectra of GeV/TeV Cosmic Ray Leptons (Journal...

    Office of Scientific and Technical Information (OSTI)

    The models rely on either dark matter annihilationdecay or specific nearby astrophysical ... is the Klein-Nishina suppression of the electron cooling rate around TeV energies. ...

  20. Characterization and Analysis of CIGS and CdTE Solar Cells: December 2004 - July 2008

    SciTech Connect

    Sites, J. R.

    2009-01-01

    The work reported here embodies a device-physics approach based on careful measurement and interpretation of data from CIGS and CdTe solar cells.

  1. Luminescent cyclometallated iridium(III) complexes having acetylide ligands

    DOEpatents

    Thompson, Mark E.; Bossi, Alberto; Djurovich, Peter Ivan

    2014-09-02

    The present invention relates to phosphorescent (triplet-emitting) organometallic materials. The phosphorescent materials of the present invention comprise Ir(III)cyclometallated alkynyl complexes for use as triplet light-emitting materials. The Ir(III)cyclometallated alkynyl complexes comprise at least one cyclometallating ligand and at least one alkynyl ligand bonded to the iridium. Also provided is an organic light emitting device comprising an anode, a cathode and an emissive layer between the anode and the cathode, wherein the emissive layer comprises a Ir(III)cyclometallated alkynyl complex as a triplet emitting material.

  2. High efficiency III-nitride light-emitting diodes

    DOEpatents

    Crawford, Mary; Koleske, Daniel; Cho, Jaehee; Zhu, Di; Noemaun, Ahmed; Schubert, Martin F; Schubert, E. Fred

    2013-05-28

    Tailored doping of barrier layers enables balancing of the radiative recombination among the multiple-quantum-wells in III-Nitride light-emitting diodes. This tailored doping enables more symmetric carrier transport and uniform carrier distribution which help to reduce electron leakage and thus reduce the efficiency droop in high-power III-Nitride LEDs. Mitigation of the efficiency droop in III-Nitride LEDs may enable the pervasive market penetration of solid-state-lighting technologies in high-power lighting and illumination.

  3. Inductrack III configuration--a maglev system for high loads

    SciTech Connect

    Post, Richard F

    2013-11-12

    Inductrack III configurations are suited for use in transporting heavy freight loads. Inductrack III addresses a problem associated with the cantilevered track of the Inductrack II configuration. The use of a cantilevered track could present mechanical design problems in attempting to achieve a strong enough track system such that it would be capable of supporting very heavy loads. In Inductrack III, the levitating portion of the track can be supported uniformly from below, as the levitating Halbach array used on the moving vehicle is a single-sided one, thus does not require the cantilevered track as employed in Inductrack II.

  4. III-V Growth on Silicon Toward a Multijunction Cell

    SciTech Connect

    Geisz, J.; Olson, J.; McMahon, W.; Friedman, D.; Kibbler, A.; Kramer, C.; Young, M.; Duda, A.; Ward, S.; Ptak, A.; Kurtz, S.; Wanlass, M.; Ahrenkiel, P.; Jiang, C. S.; Moutinho, H.; Norman, A.; Jones, K.; Romero, M.; Reedy, B.

    2005-11-01

    A III-V on Si multijunction solar cell promises high efficiency at relatively low cost. The challenges to epitaxial growth of high-quality III-Vs on Si, though, are extensive. Lattice-matched (LM) dilute-nitride GaNPAs solar cells have been grown on Si, but their performance is limited by defects related to the nitrogen. Advances in the growth of lattice-mismatched (LMM) materials make more traditional III-Vs, such as GaInP and GaAsP, very attractive for use in multijunction solar cells on silicon.

  5. Inductrack III configuration--a maglev system for high loads

    DOEpatents

    Post, Richard F

    2015-03-24

    Inductrack III configurations are suited for use in transporting heavy freight loads. Inductrack III addresses a problem associated with the cantilevered track of the Inductrack II configuration. The use of a cantilevered track could present mechanical design problems in attempting to achieve a strong enough track system such that it would be capable of supporting very heavy loads. In Inductrack III, the levitating portion of the track can be supported uniformly from below, as the levitating Halbach array used on the moving vehicle is a single-sided one, thus does not require the cantilevered track as employed in Inductrack II.

  6. Scandium resonant impurity level in PbTe

    SciTech Connect

    Skipetrov, E. P. Skipetrova, L. A.; Knotko, A. V.; Slynko, E. I.; Slynko, V. E.

    2014-04-07

    We synthesize a scandium-doped PbTe single-crystal ingot and investigate the phase and the elemental composition as well as galvanomagnetic properties of Pb{sub 1-y}Sc{sub y}Te alloys in weak magnetic fields (4.2?K???T???300?K, B???0.07?T) upon varying the scandium content (y???0.02). We find that all investigated samples are single-phase and n-type. The distribution of scandium impurities along the axis of the ingot is estimated to be exponential. An increase of scandium impurity content leads to a monotonous growth of the free electron concentration by four orders of magnitude (approximately from 10{sup 16}?cm{sup ?3} to 10{sup 20}?cm{sup ?3}). In heavily doped alloys (y?>?0.01), the free electron concentration at the liquid-helium temperature tends to saturation, indicating the pinning of the Fermi energy by the scandium resonant impurity level located on the background of the conduction band. Using the two-band Kane and six-band Dimmock dispersion relations for IV-VI semiconductors, dependences of the Fermi energy measured from the bottom of the conduction band E{sub c} on the scandium impurity content are calculated and the energy of the resonant scandium level is estimated to be E{sub Sc}???E{sub c}?+?280?meV. Diagrams of electronic structure rearrangement of Pb{sub 1-y}Sc{sub y}Te alloys upon doping are proposed.

  7. Radiative leptogenesis at the TeV scale

    SciTech Connect

    Choudhury, Debajyoti; Mahajan, Namit; Patra, Sudhanwa; Sarkar, Utpal E-mail: nmahajan@prl.res.in E-mail: utpal@prl.res.in

    2012-04-01

    We construct an explicit model implementing leptogenesis proceeding via the radiative decay of heavy right handed neutrino. In a simple extension of the Standard Model, a discrete symmetry forbids the usual decays of the right-handed neutrinos, while allowing for an effective coupling between the left-handed and right-handed neutrinos through the dipole moment operator. This generates correct leptogenesis with resonant enhancement and also the required neutrino mass via a TeV scale seesaw mechanism. The model is consistent with low energy phenomenology and would have distinct signals in the next generation colliders, and, perhaps even the LHC.

  8. High-Efficiency, Commercial Ready CdTe Solar Cells

    SciTech Connect

    Sites, James R.

    2015-11-19

    Colorado State’s F-PACE project explored several ways to increase the efficiency of CdTe solar cells and to better understand the device physics of those cells under study. Increases in voltage, current, and fill factor resulted in efficiencies above 17%. The three project tasks and additional studies are described in detail in the final report. Most cells studied were fabricated at Colorado State using an industry-compatible single-vacuum closed-space-sublimation (CSS) chamber for deposition of the key semiconductor layers. Additionally, some cells were supplied by First Solar for comparison purposes, and a small number of modules were supplied by Abound Solar.

  9. Mr. John E. Kieling, Chief Hazardous Was te Bureau

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    John E. Kieling, Chief Hazardous Was te Bureau Depa rtment of Energy Carlsbad Field Office P. O. Box 3090 Carlsbad , New Mexico 88221 NOV 0 5 2013 New Mexico Environment Department 2905 Rodeo Park Drive East. Building 1 Santa Fe, New Mexico 87505-6303 Subject: Panel 6 Closure and Final Waste Emplacement Notifications Dear Mr. Kieling : The purpose of this leiter is 1 0 notify th e New Mexico Environment Department (NMEO) that the Permittees intend to commence closure of Hazardous Waste Disposa

  10. Extended Deterrence, Nuclear Proliferation, and START III

    SciTech Connect

    Speed, R.D.

    2000-06-20

    Early in the Cold War, the United States adopted a policy of ''extended nuclear deterrence'' to protect its allies by threatening a nuclear strike against any state that attacks these allies. This threat can (in principle) be used to try to deter an enemy attack using conventional weapons or one using nuclear, chemical, or biological weapons. The credibility of a nuclear threat has long been subject to debate and is dependent on many complex geopolitical factors, not the least of which is the military capabilities of the opposing sides. The ending of the Cold War has led to a significant decrease in the number of strategic nuclear weapons deployed by the United States and Russia. START II, which was recently ratified by the Russian Duma, will (if implemented) reduce the number deployed strategic nuclear weapons on each side to 3500, compared to a level of over 11,000 at the end of the Cold War in 1991. The tentative limit established by Presidents Clinton and Yeltsin for START III would reduce the strategic force level to 2000-2500. However, the Russians (along with a number of arms control advocates) now argue that the level should be reduced even further--to 1500 warheads or less. The conventional view is that ''deep cuts'' in nuclear weapons are necessary to discourage nuclear proliferation. Thus, as part of the bargain to get the non-nuclear states to agree to the renewal of the Nuclear Non-Proliferation Treaty, the United States pledged to work towards greater reductions in strategic forces. Without movement in the direction of deep cuts, it is thought by many analysts that some countries may decide to build their own nuclear weapons. Indeed, this was part of the rationale India used to justify its own nuclear weapons program. However, there is also some concern that deep cuts (to 1500 or lower) in the U.S. strategic nuclear arsenal could have the opposite effect. The fear is that such cuts might undermine extended deterrence and cause a crisis in confidence

  11. QER- Comment of William Smith III

    Energy.gov [DOE]

    ://www.rmi.org/Knowledge-Center/Library/E05-14_NuclearPowerEconomics.... If you have not yet done so, I strongly urge you to contact the Rocky Mountain Institute and contract with them for their advice in consulting on the Quadrennial Energy Review. Sincerely, William Wharton Smith III

  12. The Preparation of an Ultrastable Mesoporous Cr(III)-MOF via...

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Abstract: Kinetic labilization of the Fe(III)-O coordination bond in a mesoporous metal-organic framework, PCN-333-Fe(III), is realized by the reduction of Fe(III) by Cr(II). The ...

  13. III-V High-Efficiency Multijunction Photovoltaics (Fact Sheet)

    SciTech Connect

    Not Available

    2011-06-01

    Capabilities fact sheet that includes scope, core competencies and capabilities, and contact/web information for III-V High-Efficiency Multijunction Photovoltaics at the National Center for Photovoltaics.

  14. EIS-0374: Klondike III/ Bigelow Canyon Wind Integration Project, OR

    Energy.gov [DOE]

    This EIS analyzes BPA's decision to approve an interconnection requested by PPM Energy, Inc. (PPM) to integrate electrical power from their proposed Klondike III Wind roject (Wind Project) into the Federal Columbia River Transmission System (FCRTS).

  15. Reactivity of Chromium(III) Nutritional Supplements in Biological...

    Office of Scientific and Technical Information (OSTI)

    Reactivities of Cr(III) complexes used in nutritional formulations, including Cr3O(OCOEt)6(OH2)3+ (A), Cr(pic)3 (pic) 2-pyridinecarboxylato(-) (B), and trans-CrCl2(OH2)4+ ...

  16. PART III … LIST OF DOCUMENTS, EXHIBITS, AND OTHER ATTACHMENTS

    National Nuclear Security Administration (NNSA)

    Page 130 PART III - LIST OF DOCUMENTS, EXHIBITS, AND OTHER ATTACHMENTS SECTION J LIST OF APPENDICES - TABLE OF CONTENTS Appendix A Statement of Work Appendix B Award Fee Plan ...

  17. Part III - List of Documents, Exhibits, and Other Attachments

    National Nuclear Security Administration (NNSA)

    Updated 93015 to Mod 0588 Contract No. DE-AC04-94AL85000 Modification No. M202 Section J - Page 1 Part III - List of Documents, Exhibits, and Other Attachments Section J LIST OF ...

  18. TOTAL SES SL EJ//EK EN IV EN III

    National Nuclear Security Administration (NNSA)

    SL EJEK EN IV EN III NN (Engineering) NQ (ProfTechAdmin) NU (TechAdminSupport) RETIREMENT ELIGIBLE TO RETIRE IMMEDIATELY 11 13.9% ELIGIBLE TO RETIRE BY 3272014 29 36.7%...

  19. Utility-Interconnected Photovoltaic Systems STEVENS III,JOHN...

    Office of Scientific and Technical Information (OSTI)

    STEVENS III,JOHN W.; BONN,RUSSELL H.; GINN,JERRY W.; GONZALEZ,SIGIFREDO; KERN,GREG 14 SOLAR ENERGY; 24 POWER TRANSMISSION AND DISTRIBUTION; INTERCONNECTED POWER SYSTEMS;...

  20. Microsoft Word - FINAL Class 1 Revise TRUPACT-III Management...

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    ... A.1 A-4 A-3 Item 1 Description: Revise the language in Attachment A1, "Container Storage," Section A1-1c(1) "TRUPACT-III Management" to address manual bolt removal from the ...

  1. Proceedings of the Fermilab III Instabilities Workshop, held...

    Office of Scientific and Technical Information (OSTI)

    Title: Proceedings of the Fermilab III Instabilities Workshop, held at Fermilab June 25-29, 1990 Authors: Peggs, Stephen ; Harvey, M. Publication Date: 1990-08-01 OSTI Identifier: ...

  2. III-Nitride Nanowires: Emerging Materials for Lighting and Energy

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Applications | MIT-Harvard Center for Excitonics III-Nitride Nanowires: Emerging Materials for Lighting and Energy Applications March 20, 2012 at 3pm/36-428 George T. Wang Advanced Materials Science, Sandia National Laboratories Wang001_000 Abstract: Nanowires based on the III nitride (AlGaInN) materials system have attracted attention as potential nanoscale building blocks in LEDs, lasers, sensors, photovoltaics, and high power and high speed electronics. Compared to planar films,

  3. Monticello Mill Tailings Site Operable Unit III Annual Groundwater Report

    Office of Legacy Management (LM)

    3 Through April 2014 October 2014 LMS/MNT/S11802 This page intentionally left blank LMS/MNT/S11802 Monticello Mill Tailings Site Operable Unit III Annual Groundwater Report May 2013 through April 2014 October 2014 This page intentionally left blank U.S. Department of Energy Monticello Mill Tailings Site OU III Annual Groundwater Report May 2013-April 2014 October 2014 Doc. No. S11802 Page i Contents Abbreviations

  4. Clean Coal Power Initiative Round III | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Clean Coal Power Initiative Round III Clean Coal Power Initiative Round III In December 2009, the U.S. Department of Energy announced the selection of three new projects with a value of $3.18 billion to accelerate the development of advanced coal technologies with carbon capture and storage at commercial-scale. These projects will help to enable commercial deployment to ensure the United States has clean, reliable, and affordable electricity and power. An investment of up to $979 million,

  5. Table III: Technical Targets for Catalyst Coated Membranes (CCMs):

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Stationary | Department of Energy III: Technical Targets for Catalyst Coated Membranes (CCMs): Stationary Table III: Technical Targets for Catalyst Coated Membranes (CCMs): Stationary Technical targets for CCMs in stationary applications defined by the High Temperature Working Group (February 2003). technical_targets_ccms_stat.pdf (93.65 KB) More Documents & Publications R&D Plan for the High Temperature Membrane Working Group Table I: Technical Targets for Catalyst Coated Membranes

  6. III-V Multijunction and Concentrator Photovoltaics Research at NREL

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    III-V Mul(jun(on & Concentrator Photovoltaics Research at NREL John Geisz SUN UP webinar October 18, 2016 III-V multijunctions used in high value applications Space: Large, flat panels - High efficiency at 1-sun AM0 - Light weight is critical - High radiation resistance - Cost not so important Terrestrial: Small cells, high concentration - High efficiency under concentration - Low system cost - Balance of system (optics, tracking...) - Sensitivity to spectral changes Efficiency is cri?cal! 3

  7. Effect of shells on photoluminescence of aqueous CdTe quantum dots

    SciTech Connect

    Yuan, Zhimin; Yang, Ping

    2013-07-15

    Graphical abstract: Size-tunable CdTe coated with several shells using an aqueous solution synthesis. CdTe/CdS/ZnS quantum dots exhibited high PL efficiency up to 80% which implies the promising applications for biomedical labeling. - Highlights: • CdTe quantum dots were fabricated using an aqueous synthesis. • CdS, ZnS, and CdS/ZnS shells were subsequently deposited on CdTe cores. • Outer ZnS shells provide an efficient confinement of electron and hole inside the QDs. • Inside CdS shells can reduce the strain on the QDs. • Aqueous CdTe/CdS/ZnS QDs exhibited high stability and photoluminescence efficiency of 80%. - Abstract: CdTe cores with various sizes were fabricated in aqueous solutions. Inorganic shells including CdS, ZnS, and CdS/ZnS were subsequently deposited on the cores through a similar aqueous procedure to investigate the effect of shells on the photoluminescence properties of the cores. In the case of CdTe/CdS/ZnS quantum dots, the outer ZnS shell provides an efficient confinement of electron and hole wavefunctions inside the quantum dots, while the middle CdS shell sandwiched between the CdTe core and ZnS shell can be introduced to obviously reduce the strain on the quantum dots because the lattice parameters of CdS is situated at the intermediate-level between those of CdTe and ZnS. In comparison with CdTe/ZnS core–shell quantum dots, the as-prepared water-soluble CdTe/CdS/ZnS quantum dots in our case can exhibit high photochemical stability and photoluminescence efficiency up to 80% in an aqueous solution, which implies the promising applications in the field of biomedical labeling.

  8. Extending Higgs inflation with TeV scale new physics

    SciTech Connect

    He, Hong-Jian; Xianyu, Zhong-Zhi E-mail: xianyuzhongzhi@gmail.com

    2014-10-01

    Higgs inflation is among the most economical and predictive inflation models, although the original Higgs inflation requires tuning the Higgs or top mass away from its current experimental value by more than 2? deviations, and generally gives a negligible tensor-to-scalar ratio r?10{sup -3} (if away from the vicinity of critical point). In this work, we construct a minimal extension of Higgs inflation, by adding only two new weak-singlet particles at TeV scale, a vector-quark T and a real scalar S. The presence of singlets (T,S) significantly impact the renormalization group running of the Higgs boson self-coupling. With this, our model provides a wider range of the tensor-to-scalar ratio r=O(0.1)-O(10{sup -3}), consistent with the favored r values by either BICEP2 or Planck data, while keeping the successful prediction of the spectral index n{sub s}?0.96. It allows the Higgs and top masses to fully fit the collider measurements. We also discuss implications for searching the predicted TeV-scale vector-quark T and scalar S at the LHC and future high energy pp colliders.

  9. Purification of CdZnTe by Electromigration

    DOE PAGES [OSTI]

    Kim, K.; Kim, Sangsu; Hong, Jinki; Lee, Jinseo; Hong, Taekwon; Bolotnikov, A. E.; Camarda, G. S.; James, R. B.

    2015-04-14

    Electro-migration of ionized/electrically active impurities in CdZnTe (CZT) was successfully demonstrated at elevated temperature with an electric field of 20 V/mm. Copper, which exists in positively charged states, electro-migrated at a speed of 15 lm/h in an electric field of 20 V/mm. A notable variation in impurity concentration along the growth direction with the segregation tendency of the impurities was observed in an electro-migrated CZT boule. Notably, both Ga and Fe, which exist in positively charged states, exhibited the opposite distribution to that of their segregation tendency in Cd(Zn)Te. Furthermore, a CZT detector fabricated from the middle portion of themore » electromigrated CZT boule showed an improved mobility-lifetime product of 0.91 10-2 cm2 /V, compared to that of 1.4 10-3 cm2 /V, observed in an as-grown (non-electro-migrated) CZT detector. The optimum radiation detector material would have minimum concentration of deep traps required for compensation.« less

  10. Advanced CdTe Photovoltaic Technology: September 2007 - March 2009

    SciTech Connect

    Barth, K.

    2011-05-01

    During the last eighteen months, Abound Solar (formerly AVA Solar) has enjoyed significant success under the SAI program. During this time, a fully automated manufacturing line has been developed, fabricated and commissioned in Longmont, Colorado. The facility is fully integrated, converting glass and semiconductor materials into complete modules beneath its roof. At capacity, a glass panel will enter the factory every 10 seconds and emerge as a completed module two hours later. This facility is currently undergoing trials in preparation for large volume production of 120 x 60 cm thin film CdTe modules. Preceding the development of the large volume manufacturing capability, Abound Solar demonstrated long duration processing with excellent materials utilization for the manufacture of high efficiency 42 cm square modules. Abound Solar prototype modules have been measured with over 9% aperture area efficiency by NREL. Abound Solar demonstrated the ability to produce modules at industry leading low costs to NREL representatives. Costing models show manufacturing costs below $1/Watt and capital equipment costs below $1.50 per watt of annual manufacturing capacity. Under this SAI program, Abound Solar supported a significant research and development program at Colorado State University. The CSU team continues to make progress on device and materials analysis. Modeling for increased device performance and the effects of processing conditions on properties of CdTe PV were investigated.

  11. Extending Higgs inflation with TeV scale new physics

    SciTech Connect

    He, Hong-Jian; Xianyu, Zhong-Zhi

    2014-10-10

    Higgs inflation is among the most economical and predictive inflation models, although the original Higgs inflation requires tuning the Higgs or top mass away from its current experimental value by more than 2σ deviations, and generally gives a negligible tensor-to-scalar ratio r∼10{sup −3} (if away from the vicinity of critical point). In this work, we construct a minimal extension of Higgs inflation, by adding only two new weak-singlet particles at TeV scale, a vector-quark T and a real scalar S . The presence of singlets (T, S) significantly impact the renormalization group running of the Higgs boson self-coupling. With this, our model provides a wider range of the tensor-to-scalar ratio r=O(0.1)−O(10{sup −3}) , consistent with the favored r values by either BICEP2 or Planck data, while keeping the successful prediction of the spectral index n{sub s}≃0.96 . It allows the Higgs and top masses to fully fit the collider measurements. We also discuss implications for searching the predicted TeV-scale vector-quark T and scalar S at the LHC and future high energy pp colliders.

  12. Thermodynamic properties of model CdTe/CdSe mixtures

    DOE PAGES [OSTI]

    van Swol, Frank; Zhou, Xiaowang W.; Challa, Sivakumar R.; Martin, James E.

    2015-02-20

    We report on the thermodynamic properties of binary compound mixtures of model groups II–VI semiconductors. We use the recently introduced Stillinger–Weber Hamiltonian to model binary mixtures of CdTe and CdSe. We use molecular dynamics simulations to calculate the volume and enthalpy of mixing as a function of mole fraction. The lattice parameter of the mixture closely follows Vegard's law: a linear relation. This implies that the excess volume is a cubic function of mole fraction. A connection is made with hard sphere models of mixed fcc and zincblende structures. We found that the potential energy exhibits a positive deviation frommore » ideal soluton behaviour; the excess enthalpy is nearly independent of temperatures studied (300 and 533 K) and is well described by a simple cubic function of the mole fraction. Using a regular solution approach (combining non-ideal behaviour for the enthalpy with ideal solution behaviour for the entropy of mixing), we arrive at the Gibbs free energy of the mixture. The Gibbs free energy results indicate that the CdTe and CdSe mixtures exhibit phase separation. The upper consolute temperature is found to be 335 K. Finally, we provide the surface energy as a function of composition. Moreover, it roughly follows ideal solution theory, but with a negative deviation (negative excess surface energy). This indicates that alloying increases the stability, even for nano-particles.« less

  13. Purification of CdZnTe by Electromigration

    SciTech Connect

    Kim, K.; Kim, Sangsu; Hong, Jinki; Lee, Jinseo; Hong, Taekwon; Bolotnikov, A. E.; Camarda, G. S.; James, R. B.

    2015-04-14

    Electro-migration of ionized/electrically active impurities in CdZnTe (CZT) was successfully demonstrated at elevated temperature with an electric field of 20 V/mm. Copper, which exists in positively charged states, electro-migrated at a speed of 15 lm/h in an electric field of 20 V/mm. A notable variation in impurity concentration along the growth direction with the segregation tendency of the impurities was observed in an electro-migrated CZT boule. Notably, both Ga and Fe, which exist in positively charged states, exhibited the opposite distribution to that of their segregation tendency in Cd(Zn)Te. Furthermore, a CZT detector fabricated from the middle portion of the electromigrated CZT boule showed an improved mobility-lifetime product of 0.91 10-2 cm2 /V, compared to that of 1.4 10-3 cm2 /V, observed in an as-grown (non-electro-migrated) CZT detector. The optimum radiation detector material would have minimum concentration of deep traps required for compensation.

  14. Purification of CdZnTe by electromigration

    SciTech Connect

    Kim, K.; Kim, Sangsu; Hong, Jinki; Lee, Jinseo; Hong, Taekwon; Bolotnikov, A. E.; Camarda, G. S.; James, R. B.

    2015-04-14

    Electro-migration of ionized/electrically active impurities in CdZnTe (CZT) was successfully demonstrated at elevated temperature with an electric field of 20 V/mm. Copper, which exists in positively charged states, electro-migrated at a speed of 15 μm/h in an electric field of 20 V/mm. A notable variation in impurity concentration along the growth direction with the segregation tendency of the impurities was observed in an electro-migrated CZT boule. Notably, both Ga and Fe, which exist in positively charged states, exhibited the opposite distribution to that of their segregation tendency in Cd(Zn)Te. A CZT detector fabricated from the middle portion of the electro-migrated CZT boule showed an improved mobility-lifetime product of 0.91 × 10{sup −2} cm{sup 2}/V, compared with that of 1.4 × 10{sup −3} cm{sup 2}/V, observed in an as-grown (non-electro-migrated) CZT detector. The optimum radiation detector material would have minimum concentration of deep traps required for compensation.

  15. III-V/Si Wafer Bonding Using Transparent, Conductive Oxide Interlayers...

    Office of Scientific and Technical Information (OSTI)

    III-VSi Wafer Bonding Using Transparent, Conductive Oxide Interlayers; Article No. 263904 Citation Details In-Document Search Title: III-VSi Wafer Bonding Using Transparent, ...

  16. GRED Drilling Award … GRED III Phase II; 2010 Geothermal Technology...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Drilling Award GRED III Phase II; 2010 Geothermal Technology Program Peer Review Report GRED Drilling Award GRED III Phase II; 2010 Geothermal Technology Program Peer Review ...

  17. Photoconductivity of CdTe Nanocrystal-Based Thin Films. Te2- Ligands Lead To Charge Carrier Diffusion Lengths Over 2 Micrometers

    SciTech Connect

    Crisp, Ryan W.; Callahan, Rebecca; Reid, Obadiah G.; Dolzhnikov, Dmitriy S.; Talapin, Dmitri V.; Rumbles, Garry; Luther, Joseph M.; Kopidakis, Nikos

    2015-11-16

    We report on photoconductivity of films of CdTe nanocrystals (NCs) using time-resolved microwave photoconductivity (TRMC). Spherical and tetrapodal CdTe NCs with tunable size-dependent properties are studied as a function of surface ligand (including inorganic molecular chalcogenide species) and annealing temperature. Relatively high carrier mobility is measured for films of sintered tetrapod NCs (4 cm2/(V s)). Our TRMC findings show that Te2- capped CdTe NCs show a marked improvement in carrier mobility (11 cm2/(V s)), indicating that NC surface termination can be altered to play a crucial role in charge-carrier mobility even after the NC solids are sintered into bulk films.

  18. Transport properties of the SnBi{sub 2}Te{sub 4}–PbBi{sub 2}Te{sub 4} solid solution

    SciTech Connect

    Pan, Lin; Li, Jing; Berardan, David Dragoe, Nita

    2015-05-15

    We report on the electrical and thermal transport properties of the Sn{sub 1−x}Pb{sub x}Bi{sub 2}Te{sub 4} series and we discuss the potential of these materials for thermoelectric conversion applications. From the evolution of the XRD patterns, we can confidently conclude that a complete solid solution exists between SnBi{sub 2}Te{sub 4} and PbBi{sub 2}Te{sub 4}, with no miscibility gap. A crossover from p-type conduction in Sn-rich samples to n-type conduction in Pb-rich ones has been observed, with a transition between x=0.3 and 0.4. A concomitant increase of the electrical resistivity and of the Seebeck coefficient has been observed in the solid solution, which leads to almost constant values of the thermoelectric power factor. Moreover, the thermal conductivity is slightly reduced in the solid solution. The best figure of merit ZT values at room temperature have been observed for p-type Sn{sub 0.8}Pb{sub 0.2}Bi{sub 2}Te{sub 4} with ZT=0.25 and for n-type Sn{sub 0.3}Pb{sub 0.7}Bi{sub 2}Te{sub 4} with ZT=0.15. - Graphical abstract: Seebeck coefficient in (Pb/Sn)Bi{sub 2}Te{sub 4} solid solution. - Highlights: • A complete solid solution exists between PbBi{sub 2}Te{sub 4} and SnBi{sub 2}Te{sub 4.} • A crossover between p-type and n-type is observed for 0.3

  19. Thermoelectric properties of Sn- and Pb-doped Tl{sub 9}BiTe{sub 6} and Tl{sub 9}SbTe{sub 6}

    SciTech Connect

    Guo, Quansheng; Chan, Meghan; Kuropatwa, Bryan A.; Kleinke, Holger

    2014-11-14

    A variety of substitutions in Tl{sub 9}BiTe{sub 6} and Tl{sub 9}SbTe{sub 6} with Sn and Pb, amounting to 14 different samples, were performed by melting the stoichiometric amounts of elements at 923 K, followed by slow cooling. The pulverized powders were sintered using the hot-pressing technique. All samples were of single phase according to the powder X-ray diffraction patterns. Thermoelectric property measurements were performed to investigate the effects of Sn- and Pb-doping on the electrical conductivity, Seebeck coefficient, and thermal conductivity. Increasing the concentration of the dopants caused increases in electrical and thermal conductivity, while decreasing the Seebeck coefficient. Tl{sub 9}Bi{sub 0.90}Pb{sub 0.10}Te{sub 6} and Tl{sub 9}Bi{sub 0.85}Pb{sub 0.15}Te{sub 6} exhibited the highest power factor. The changes in lattice thermal conductivity were minor and did not follow a clear trend. Competitive ZT values were obtained for Tl{sub 9}Bi{sub 0.95}Sn{sub 0.05}Te{sub 6}, Tl{sub 9}Bi{sub 0.95}Pb{sub 0.05}Te{sub 6}, Tl{sub 9}Sb{sub 0.97}Sn{sub 0.03}Te{sub 6}, and Tl{sub 9}Sb{sub 0.95}Pb{sub 0.05}Te{sub 6}, namely 0.95, 0.94, 0.83, and 0.71 around 500 K, respectively. Higher dopant concentrations led to lower ZT values.

  20. Complexation of Curium(III) with DTPA at 10–70 °C: Comparison with Eu(III)–DTPA in Thermodynamics, Luminescence, and Coordination Modes

    SciTech Connect

    Tian, Guoxin; Zhang, Zhiyong; Martin, Leigh R.; Rao, Linfeng

    2015-02-16

    Separation of trivalent actinides (An(III)) from trivalent lanthanides (Ln(III)) is a challenging task because of their nearly identical chemical properties. Diethylenetriaminepentaacetate (DTPA), a key reagent used in the TALSPEAK process that effectively separates An(III) from Ln(III), is believed to play a critical role in the An(III)/Ln(III) separation. However, the underlying principles for the separation based on the difference in the complexation of DTPA with An(III) and Ln(III) remain unclear. In this work, the complexation of DTPA with Cm(III) at 10-70 ºC was investigated by spectrophotometry, luminescence spectroscopy, and microcalorimetry, in conjunction with computational methods. The binding strength, the enthalpy of complexation, the coordination modes, and the luminescence properties are compared between the Cm(III)-DTPA and Eu(III)-DTPA systems. The experimental and computational data have demonstrated that the difference between Cm(III) and Eu(III) in the binding strength with DTPA can be attributed to the stronger covalence bonding between Cm(III) and the nitrogen donors of DTPA.

  1. ZnTeO{sub 3} crystal growth by a modified Bridgman technique

    SciTech Connect

    Nawash, Jalal M. Lynn, Kelvin G.

    2014-12-15

    Highlights: • ZnTeO{sub 3} single crystals were grown for the first time by a modified Bridgman method. • The growth is still possible in a system that lacks congruent melting. • A growth is best when melt is exposed to a steeper axial thermal gradient. • Optical and electrical properties were investigated for the grown crystals. - Abstract: Zinc Tellurite (ZnTeO{sub 3}) crystals were grown for the first time using a modified Bridgman method with a 2.5 kHz radio frequency (RF) furnace. Single crystal growth of ZnTeO{sub 3} was hindered by many complicating factors, such as the evaporation of TeO{sub 2} above 700 °C and the formation of more than one phase during crystal growth. While there were several successful runs that produced ZnTeO{sub 3} single crystals, it was found that large (≥10 cm{sup 3}) single ZnTeO{sub 3} crystals resulted when the crucible was exposed to a steeper vertical thermal gradient and when the temperature of the melt was raised to at least 860 °C. The results of powder X-ray diffraction (XRD) patterns were in accordance with the X-ray powder diffraction file (PDF) for ZnTeO{sub 3}. Some optical, electrical and structural properties of ZnTeO{sub 3} single crystals were reported in this paper.

  2. Fabrication and Physics of CdTe Devices by Sputtering: Final Report, 1 March 2005 - 30 November 2008

    SciTech Connect

    Compaan, A.; Collins, R.; Karpov, V.; Giolando, D.

    2009-04-01

    Work to understand CdS/CdTe solar cell device physics; increase magnetron sputtering rate (while keeping high device quality); reduce thickness of CdTe layers (while keeping voltage and fill factor).

  3. Improving Energy Efficiency by Developing Components for Distributed Cooling and Heating Based on Thermal Comfort Modeling[Thermoelectric (TE) HVAC

    Energy.gov [DOE]

    Discusses results from TE HVAC project to add detail to a human thermal comfort model and further allow load reduction in the climate control energy through a distributed TE network

  4. Growth of CdTe thin films on graphene by close-spaced sublimation method

    SciTech Connect

    Jung, Younghun; Yang, Gwangseok; Kim, Jihyun, E-mail: hyunhyun7@korea.ac.kr [Department of Chemical and Biological Engineering, Korea University, Seoul 136-701 (Korea, Republic of)] [Department of Chemical and Biological Engineering, Korea University, Seoul 136-701 (Korea, Republic of); Chun, Seungju; Kim, Donghwan [Department of Materials Science and Engineering, Korea University, Seoul 136-701 (Korea, Republic of)] [Department of Materials Science and Engineering, Korea University, Seoul 136-701 (Korea, Republic of)

    2013-12-02

    CdTe thin films grown on bi-layer graphene were demonstrated by using the close-spaced sublimation method, where CdTe was selectively grown on the graphene. The density of the CdTe domains was increased with increasing the number of the defective sites in the graphene, which was controlled by the duration of UV exposure. The CdTe growth rate on the bi-layer graphene electrodes was 400?nm/min with a bandgap energy of 1.451.49?eV. Scanning electron microscopy, micro-Raman spectroscopy, micro-photoluminescence, and X-ray diffraction technique were used to confirm the high quality of the CdTe thin films grown on the graphene electrodes.

  5. Ba{sub 2}TeO: A new layered oxytelluride

    SciTech Connect

    Besara, T.; Ramirez, D.; Sun, J.; Whalen, J.B.; Tokumoto, T.D.; McGill, S.A.; Singh, D.J.; Siegrist, T.

    2015-02-15

    Single crystals of the new semiconducting oxytelluride phase, Ba{sub 2}TeO, were synthesized from barium oxide powder and elemental tellurium in a molten barium metal flux. Ba{sub 2}TeO crystallizes in tetragonal symmetry with space group P4/nmm (#129), a=5.0337(1) Å, c=9.9437(4) Å, Z=2. The crystals were characterized by single crystal x-ray diffraction, heat capacity and optical measurements. The optical measurements along with electronic band structure calculations indicate semiconductor behavior with a band gap of 2.93 eV. Resistivity measurements show that Ba{sub 2}TeO is highly insulating. - Graphical abstract: Starting from a simple stacking of rocksalt layers, the final structure of Ba{sub 2}TeO can be obtained by accommodation of structural strain via atom displacements. Density of states calculations and optical absorbance measurements show that Ba{sub 2}TeO has a band gap of 2.93 eV, indicative of semiconductor behavior. - Highlights: • Single crystal synthesis of a new layered oxytelluride, Ba{sub 2}TeO. • The structure features inverse PbO-type BaO layers and NaCl-type BaTe layers. • Optical absorbance show Ba{sub 2}TeO to be a semiconductor with a 2.93 eV gap. • Density of states indicate a small hybridization between Te 5p and Ba 5d states. • The BaTe (BaO) layers dominate the heat capacity at low (high) temperatures.

  6. Anharmonic effects in the thermoelectric properties of PbTe

    SciTech Connect

    Al-Otaibi, Jawaher; Srivastava, G. P.

    2014-07-28

    In this work, we investigate the crystal anharmonic effects in the thermoelectric properties of n-type PbTe. The lattice thermal transport coefficient is computed by employing an isotropic continuum model for the dispersion relation for acoustic as well as optical phonon branches, an isotropic continuum model for crystal anharmonicity, and the single-mode relaxation time scheme. The electronic components of the transport coefficients in a wide temperature range are calculated using the isotropic-nearly-free-electron model, interaction of electrons with deformation potential of acoustic phonons, and the effect of the band non-parabolicity. It is found that the transverse optical branches play a major role in determining the phonon conductivity and the thermoelectric figure of merit of this material.

  7. Search for heavy lepton resonances decaying to a Z boson and a lepton in pp collisions at \\( \\sqrt{s}=8 \\) TeV with the ATLAS detector

    SciTech Connect

    Aad, G.

    2015-09-16

    In this study, a search for heavy leptons decaying to a Z boson and an electron or a muon is presented. The search is based on pp collision data taken at \\( \\sqrt{s}=8 \\) TeV by the ATLAS experiment at the CERN Large Hadron Collider, corresponding to an integrated luminosity of 20.3 fb⁻¹. Three high-transverse-momentum electrons or muons are selected, with two of them required to be consistent with originating from a Z boson decay. No significant excess above Standard Model background predictions is observed, and 95% confidence level limits on the production cross section of high-mass trilepton resonances are derived. The results are interpreted in the context of vector-like lepton and type-III seesaw models. For the vector-like lepton model, most heavy lepton mass values in the range 114–176 GeV are excluded. For the type-III seesaw model, most mass values in the range 100–468 GeV are excluded.

  8. Search for heavy lepton resonances decaying to a Z boson and a lepton in pp collisions at \\( \\sqrt{s}=8 \\) TeV with the ATLAS detector

    DOE PAGES [OSTI]

    Aad, G.

    2015-09-16

    In this study, a search for heavy leptons decaying to a Z boson and an electron or a muon is presented. The search is based on pp collision data taken at \\( \\sqrt{s}=8 \\) TeV by the ATLAS experiment at the CERN Large Hadron Collider, corresponding to an integrated luminosity of 20.3 fb⁻¹. Three high-transverse-momentum electrons or muons are selected, with two of them required to be consistent with originating from a Z boson decay. No significant excess above Standard Model background predictions is observed, and 95% confidence level limits on the production cross section of high-mass trilepton resonances aremore » derived. The results are interpreted in the context of vector-like lepton and type-III seesaw models. For the vector-like lepton model, most heavy lepton mass values in the range 114–176 GeV are excluded. For the type-III seesaw model, most mass values in the range 100–468 GeV are excluded.« less

  9. PROJECT SELECTIONS FOR DOE PHASE III XLERATOR SMALL BUSINESS PROGRAM - pg 3

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    | Department of Energy PROJECT SELECTIONS FOR DOE PHASE III XLERATOR SMALL BUSINESS PROGRAM - pg 3 PROJECT SELECTIONS FOR DOE PHASE III XLERATOR SMALL BUSINESS PROGRAM - pg 3 sbir_phase3_pg3.pdf (227.38 KB) More Documents & Publications SBIR_Phase_III.pdf PROJECT SELECTIONS FOR DOE PHASE III XLERATOR SMALL BUSINESS PROGRAM Albany HTS Power Cable

  10. Solar type III radio bursts modulated by homochromous Alfvn waves

    SciTech Connect

    Zhao, G. Q.; Chen, L.; Wu, D. J.

    2013-12-10

    Solar type III radio bursts and their production mechanisms have been intensively studied in both theory and observation and are believed to be the most important signatures of electron acceleration in active regions. Recently, Wu et al. proposed that the electron-cyclotron maser emission (ECME) driven by an energetic electron beam could be responsible for producing type III bursts and pointed out that turbulent Alfvn waves can greatly influence the basic process of ECME via the oscillation of these electrons in the wave fields. This paper investigates effects of homochromous Alfvn waves (HAWs) on ECME driven by electron beams. Our results show that the growth rate of the O-mode wave will be significantly modulated by HAWs. We also discuss possible application to the formation of fine structures in type III bursts, such as so-called solar type IIIb radio bursts.

  11. Modification of Doublet III to a large Dee facility

    SciTech Connect

    Davis, L.G.; Rawls, J.M.

    1981-10-01

    The Doublet III facility represents a unique opportunity to convert an existing device to a powerful test bed for FED design and operation issues. Such a conversion is made possible by virtue of the demountability of the devices toroidal field coils. Doublet III can be partially disassembled then reassembled with a large dee-shaped vacuum vessel and associated poloidal coils and structure. Doublet III presently possesses or is acquiring adequate auxiliary heating (14 MW of neutral beams and 2 MW of ECH), stored energy (3 GJ), and power conversion equipment (some added field shaping power equipment is required) to support large dee, reactor-level, plasma experiments. The only modifications required of the device are those directly caused by installing a larger vessel - the vessel itself (and its internal protection system); poloidal field coils that interfere with the larger vessel; and a support system for the new vessel and coils.

  12. ARM - Field Campaign - AIRS Validation Soundings Phase III

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    govCampaignsAIRS Validation Soundings Phase III ARM Data Discovery Browse Data Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send Campaign : AIRS Validation Soundings Phase III 2004.04.19 - 2004.09.05 Lead Scientist : Jimmy Voyles For data sets, see below. Abstract Radiosonde launches from NSA were timed to coincide with overpasses of the Aqua satellite carrying the AIRS sensor for the purpose of providing in situ validation data for development and

  13. ARM - Field Campaign - AIRS Validation Soundings Phase III

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    govCampaignsAIRS Validation Soundings Phase III ARM Data Discovery Browse Data Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send Campaign : AIRS Validation Soundings Phase III 2004.04.02 - 2004.08.10 Lead Scientist : Jimmy Voyles For data sets, see below. Abstract Radiosonde launches from NSA were timed to coincide with overpasses of the Aqua satellite carrying the AIRS sensor for the purpose of providing in situ validation data for development and

  14. ARM - Field Campaign - AIRS Validation Soundings Phase III

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    III ARM Data Discovery Browse Data Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send Campaign : AIRS Validation Soundings Phase III 2004.04.01 - 2004.09.29 Lead Scientist : Jimmy Voyles For data sets, see below. Abstract Radiosonde launches from NSA were timed to coincide with overpasses of the Aqua satellite carrying the AIRS sensor for the purpose of providing in situ validation data for development and testing of AIRS water vapor retrievals

  15. Chapter 1.19: Cadmium Telluride Photovoltaic Thin Film: CdTe

    SciTech Connect

    Gessert, T. A.

    2012-01-01

    The chapter reviews the history, development, and present processes used to fabricate thin-film, CdTe-based photovoltaic (PV) devices. It is intended for readers who are generally familiar with the operation and material aspects of PV devices but desire a deeper understanding of the process sequences used in CdTe PV technology. The discussion identifies why certain processes may have commercial production advantages and how the various process steps can interact with each other to affect device performance and reliability. The chapter concludes with a discussion of considerations of large-area CdTe PV deployment including issues related to material availability and energy-payback time.

  16. NuTeV Anomaly Helps Shed Light on Physics of the Nucleus | Jefferson Lab

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    NuTeV Anomaly Helps Shed Light on Physics of the Nucleus NuTeV Anomaly Helps Shed Light on Physics of the Nucleus NEWPORT NEWS, VA, June 29, 2009 - A new calculation clarifies the complicated relationship between protons and neutrons in the atomic nucleus and offers a fascinating resolution of the famous NuTeV Anomaly. The calculation, published in the journal Physical Review Letters on June 26, was carried out by a collaboration of researchers from the Department of Energy's Thomas Jefferson

  17. Evidence for charge Kondo effect in superconducting Tl-doped PbTe (Journal

    Office of Scientific and Technical Information (OSTI)

    Article) | SciTech Connect Evidence for charge Kondo effect in superconducting Tl-doped PbTe Citation Details In-Document Search Title: Evidence for charge Kondo effect in superconducting Tl-doped PbTe We report results of low-temperature thermodynamic and transport measurements of Pb{sub 1-x}Tl{sub x}Te single crystals for Tl concentrations up to the solubility limit of approximately x = 1.5%. For all doped samples, we observe a low-temperature resistivity upturn that scales in magnitude

  18. Background limited mid-infrared photodetection with photovoltaic HgTe

    Office of Scientific and Technical Information (OSTI)

    colloidal quantum dots (Journal Article) | SciTech Connect Background limited mid-infrared photodetection with photovoltaic HgTe colloidal quantum dots Citation Details In-Document Search Title: Background limited mid-infrared photodetection with photovoltaic HgTe colloidal quantum dots The photovoltaic response of thin films of HgTe colloidal quantum dots in the 3-5 μm range is observed. With no applied bias, internal quantum efficiency exceeding 40%, specific detectivity above 10{sup 10}

  19. CdTe portfolio offers commercial ready high efficiency solar - Energy

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Innovation Portal Find More Like This Return to Search CdTe portfolio offers commercial ready high efficiency solar National Renewable Energy Laboratory Contact NREL About This Technology Publications: PDF Document Publication MktgSummary CdTe.pdf (117 KB) Schematic illustration of a typical CdTe superstrate thin-film PV device. In this design, the layers of the device are deposited onto a glass &quot;superstrate&quot; that allows sunlight to enter. The sunlight passes through the

  20. Predicting Efficient Antenna Ligands for Tb(III) Emission

    SciTech Connect

    Samuel, Amanda P.S.; Xu, Jide; Raymond, Kenneth

    2008-10-06

    A series of highly luminescent Tb(III) complexes of para-substituted 2-hydroxyisophthalamide ligands (5LI-IAM-X) has been prepared (X = H, CH{sub 3}, (C=O)NHCH{sub 3}, SO{sub 3}{sup -}, NO{sub 2}, OCH{sub 3}, F, Cl, Br) to probe the effect of substituting the isophthalamide ring on ligand and Tb(III) emission in order to establish a method for predicting the effects of chromophore modification on Tb(III) luminescence. The energies of the ligand singlet and triplet excited states are found to increase linearly with the {pi}-withdrawing ability of the substituent. The experimental results are supported by time-dependent density functional theory (TD-DFT) calculations performed on model systems, which predict ligand singlet and triplet energies within {approx}5% of the experimental values. The quantum yield ({Phi}) values of the Tb(III) complex increases with the triplet energy of the ligand, which is in part due to the decreased non-radiative deactivation caused by thermal repopulation of the triplet. Together, the experimental and theoretical results serve as a predictive tool that can be used to guide the synthesis of ligands used to sensitize lanthanide luminescence.

  1. Methods for improved growth of group III nitride buffer layers

    DOEpatents

    Melnik, Yurity; Chen, Lu; Kojiri, Hidehiro

    2014-07-15

    Methods are disclosed for growing high crystal quality group III-nitride epitaxial layers with advanced multiple buffer layer techniques. In an embodiment, a method includes forming group III-nitride buffer layers that contain aluminum on suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. A hydrogen halide or halogen gas is flowing into the growth zone during deposition of buffer layers to suppress homogeneous particle formation. Some combinations of low temperature buffers that contain aluminum (e.g., AlN, AlGaN) and high temperature buffers that contain aluminum (e.g., AlN, AlGaN) may be used to improve crystal quality and morphology of subsequently grown group III-nitride epitaxial layers. The buffer may be deposited on the substrate, or on the surface of another buffer. The additional buffer layers may be added as interlayers in group III-nitride layers (e.g., GaN, AlGaN, AlN).

  2. Intrinsic Rashba-like splitting in asymmetric Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} heterogeneous topological insulator films

    SciTech Connect

    Liu, Xiaofei; Guo, Wanlin

    2014-08-25

    We show by density functional theory calculations that asymmetric hetero-stacking of Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} films can modulate the topological surface states. Due to the structure inversion asymmetry, an intrinsic Rashba-like splitting of the conical surface bands is aroused. While such splitting in homogeneous Bi{sub 2}Te{sub 3}-class topological insulators can be realized in films with more than three quintuple layers under external electric fields, the hetero-stacking breaks the limit of thickness for preserving the topological nature into the thinnest two quintuple layers. These results indicate that the hetero-stacking can serve as an efficient strategy for spin-resolved band engineering of topological insulators.

  3. Magnetic anisotropy induced by crystal distortion in Ge{sub 1−x}Mn{sub x}Te/PbTe//KCl (001) ferromagnetic semiconductor layers

    SciTech Connect

    Knoff, W. Łusakowski, A.; Domagała, J. Z.; Minikayev, R.; Taliashvili, B.; Łusakowska, E.; Pieniążek, A.; Szczerbakow, A.; Story, T.

    2015-09-21

    Ferromagnetic resonance (FMR) study of magnetic anisotropy is presented for thin layers of IV-VI diluted magnetic semiconductor Ge{sub 1−x}Mn{sub x}Te with x = 0.14 grown by molecular beam epitaxy on KCl (001) substrate with a thin PbTe buffer. Analysis of the angular dependence of the FMR resonant field reveals that an easy magnetization axis is located near to the normal to the layer plane and is controlled by two crystal distortions present in these rhombohedral Ge{sub 1−x}Mn{sub x}Te layers: the ferroelectric distortion with the relative shift of cation and anion sub-lattices along the [111] crystal direction and the biaxial in-plane, compressive strain due to thermal mismatch.

  4. Effect of Back Contact and Rapid Thermal Processing Conditions on Flexible CdTe Device Performance

    SciTech Connect

    Mahabaduge, Hasitha; Meysing, D. M.; Rance, Will L.; Burst, James M.; Reese, Matthew O.; Wolden, C. A.; Gessert, Timothy A.; Metzger, Wyatt K.; Garner, S.; Barnes, Teresa M.

    2015-06-14

    Flexible CdTe solar cells on ultra-thin glass substrates can enable new applications that require high specific power, unique form-factors, and low manufacturing costs. To be successful, these cells must be cost competitive, have high efficiency, and have high reliability. Here we present back contact processing conditions that enabled us to achieve over 16% efficiency on flexible Corning (R) Willow (R) Glass substrates. We used co-evaporated ZnTe:Cu and Au as our back contact and used rapid thermal processing (RTP) to activate the back contact. Both the ZnTe to Cu ratio and the RTP activation temperature provide independent control over the device performance. We have investigated the influence of various RTP conditions to Cu activation and distribution. Current density-voltage, capacitance-voltage measurements along with device simulations were used to examine the device performance in terms of ZnTe to Cu ratio and rapid thermal activation temperature.

  5. Efficiency, Cost and Weight Trade-off in TE Power Generation System for Vehicle Exhaust Applications

    Energy.gov [DOE]

    It contains a detailed co-optimization of the thermoelectric module with the heat sink and a study of the tradeoff between the material cost and efficiency for the TE module and the heat sink. An optimum design is found.

  6. V-183: Cisco TelePresence TC and TE Bugs Let Remote Users Deny...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Remote Users Deny Service and Remote Adjacent Authenticated Users Gain Root Shell Access V-183: Cisco TelePresence TC and TE Bugs Let Remote Users Deny Service and Remote Adjacent...

  7. THE EI'IVIRONMENTAL QUALITY COMPANY CORPCl~V\\TE OFFICE

    Office of Environmental Management (EM)

    EI'IVIRONMENTAL QUALITY COMPANY CORPClVTE OFFICE Ill 36255 MICI*at:l;1 '1 J.VENIJE * WAYNE , IVICHICA148 '184 te800-5925489 tit fax 800-592-5329 February 20, 2013 Yia ...

  8. Structural analysis of Cr aggregation in ferromagnetic semiconductor (Zn,Cr)Te

    SciTech Connect

    Kobayashi, H.; Yamawaki, K.; Nishio, Y.; Kanazawa, K.; Kuroda, S.; Mitome, M.; Bando, Y.

    2013-12-04

    The Cr aggregation in a ferromagnetic semiconductor (Zn,Cr)Te was studied by performing precise analyses using TEM and XRD of microscopic structure of the Cr-aggregated regions formed in iodine-doped Zn{sub 1?x}Cr{sub x}Te films with a relatively high Cr composition x ? 0.2. It was found that the Cr-aggregated regions are composed of Cr{sub 1??}Te nanocrystals of the hexagonal structure and these hexagonal precipitates are stacked preferentially on the (111)A plane of the zinc-blende (ZB) structure of the host ZnTe crystal with its c-axis nearly parallel to the (111){sub ZB} plane.

  9. Atomic-force microscopy and photoluminescence of nanostructured CdTe

    SciTech Connect

    Babentsov, V.; Sizov, F.; Franc, J.; Luchenko, A.; Svezhentsova, E. Tsybrii, Z.

    2013-09-15

    Low-dimensional CdTe nanorods with a diameter of 10-30 nm and a high aspect ratio that reaches 100 are studied. The nanorods are grown by the physical vapor transport method with the use of Bi precipitates on the substrates. In addition, thin films of closely packed CdTe nanorods with the transverse dimensions {approx}(100-200) nm are grown. Atomic-force microscopy shows that the cross sections of all of the nanorods were hexagonally shaped. By photoluminescence measurements, the inference about the wurtzite structure of CdTe is supported, and the structural quality, electron-phonon coupling, and defects are analyzed. On the basis of recent ab initio calculations, the nature of defects responsible for the formation of deep levels in the CdTe layers and bulk crystals are analyzed.

  10. Ultrathin nanosheets of CrSiTe3. A semiconducting two-dimensional...

    Office of Scientific and Technical Information (OSTI)

    As a result, the ferromagnetic mono- and few-layer 2D CrSiTe3 indicated here should enable ... Type: Accepted Manuscript Journal Name: Journal of Materials Chemistry. C Additional ...

  11. Aqueous Synthesis of Zinc Blende CdTe/CdS Magic-Core/Thick-Shell...

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Aqueous Synthesis of Zinc Blende CdTeCdS Magic-CoreThick-Shell Tetrahedral Shaped Nanocrystals with Emission Tunable to Near-Infrared Authors: Deng, Z., Schulz, O., Lin, S.,...

  12. Resonant Level Enhancement of the Thermoelectric Power of Bi2Te3...

    Energy.gov [DOE] (indexed site)

    thermoelectric tin alloys for heat pumps. heremans.pdf (860.8 KB) More Documents & Publications The tin impurity in Bi0.5Sb1.5Te3 alloys Strategies for High Thermoelectric zT in ...

  13. Efficiency, Cost and Weight Trade-off in TE Power Generation...

    Energy.gov [DOE] (indexed site)

    It contains a detailed co-optimization of the thermoelectric module with the heat sink and a study of the tradeoff between the material cost and efficiency for the TE module and ...

  14. Elastic properties of sulphur and selenium doped ternary PbTe alloys by first principles

    SciTech Connect

    Bali, Ashoka Chetty, Raju Mallik, Ramesh Chandra

    2014-04-24

    Lead telluride (PbTe) is an established thermoelectric material which can be alloyed with sulphur and selenium to further enhance the thermoelectric properties. Here, a first principles study of ternary alloys PbS{sub x}Te{sub (1−x)} and PbSe{sub x}Te{sub (1−x)} (0≤x≤1) based on the Virtual Crystal Approximation (VCA) is presented for different ratios of the isoelectronic atoms in each series. Equilibrium lattice parameters and elastic constants have been calculated and compared with the reported data. Anisotropy parameter calculated from the stiffness constants showed a slight improvement in anisotropy of elastic properties of the alloys over undoped PbTe. Furthermore, the alloys satisfied the predicted stability criteria from the elastic constants, showing stable structures, which agreed with the previously reported experimental results.

  15. Defect induced structural and thermoelectric properties of Sb{sub 2}Te{sub 3} alloy

    SciTech Connect

    Das, Diptasikha; Malik, K.; Deb, A. K.; Dhara, Sandip; Bandyopadhyay, S.; Banerjee, Aritra

    2015-07-28

    Structural and thermoelectric properties of metallic and semiconducting Sb{sub 2}Te{sub 3} are reported. X-Ray diffraction and Raman spectroscopy studies reveal that semiconducting sample has higher defect density. Nature and origin of possible defects are highlighted. Semiconducting Sb{sub 2}Te{sub 3} hosts larger numbers of defects, which act as scattering center and give rise to the increased value of resistivity, thermopower, and power factor. Thermopower data indicate p-type nature of the synthesized samples. It is evidenced that the surface states are often mixed with the bulk state, giving rise to metallicity in Sb{sub 2}Te{sub 3}. Role of different scattering mechanism on the thermoelectric property of Sb{sub 2}Te{sub 3} is discussed.

  16. Giant and tunable valley degeneracy splitting in MoTe 2 (Journal...

    Office of Scientific and Technical Information (OSTI)

    This content will become publicly available on September 7, 2016 Title: Giant and tunable valley degeneracy splitting in MoTe 2 Authors: Qi, Jingshan ; Li, Xiao ; Niu, Qian ; Feng, ...

  17. Thermoelectric Enhancement in PbTe with K or Na codoping from...

    Office of Scientific and Technical Information (OSTI)

    Thermoelectric Enhancement in PbTe with K or Na codoping from tuning the interaction of the light- and heavy-hole valence bands Citation Details In-Document Search Title: ...

  18. A comparison of NNLO QCD predictions with 7 TeV ATLAS and CMS...

    Office of Scientific and Technical Information (OSTI)

    with 7 TeV ATLAS and CMS data for V+jet processes Authors: Boughezal, Radja ; Liu, Xiaohui ; Petriello, Frank Publication Date: 2016-09-01 OSTI Identifier: 1258296 Grant...

  19. Shape-controlled narrow-gap SnTe nanostructures: From nanocubes to nanorods and nanowires

    SciTech Connect

    Guo, Shaojun; Andrew F. Fidler; He, Kai; Su, Dong; Chen, Gen; Lin, Qianglu; Pietryga, Jeffrey M.; Klimov, Victor I.

    2015-11-06

    In this study, the rational design and synthesis of narrow-gap colloidal semiconductor nanocrystals (NCs) is an important step toward the next generation of solution-processable photovoltaics, photodetectors, and thermoelectric devices. SnTe NCs are particularly attractive as a Pb-free alternative to NCs of narrow-gap lead chalcogenides. Previous synthetic efforts on SnTe NCs have focused on spherical nanoparticles. Here we report new strategies for synthesis of SnTe NCs with shapes tunable from highly monodisperse nanocubes, to nanorods (NRs) with variable aspect ratios, and finally to long, straight nanowires (NWs). Reaction at high temperature quickly forms thermodynamically favored nanocubes, but low temperatures lead to elongated particles. Transmission electron microscopy studies of reaction products at various stages of the synthesis reveal that the growth and shape-focusing of monodisperse SnTe nanocubes likely involves interparticle ripening, while directional growth of NRs and NWs may be initiated by particle dimerization via oriented attachment.

  20. Local order origin of thermal stability enhancement in amorphous Ag doping GeTe

    SciTech Connect

    Xu, L.; Li, Y.; Yu, N. N.; Zhong, Y. P.; Miao, X. S.

    2015-01-19

    We demonstrate the impacts of Ag doping on the local atomic structure of amorphous GeTe phase-change material. The variations of phonon vibrational modes, boding nature, and atomic structure are shown by Raman, X-ray photoelectron spectroscopy, and ab initio calculation. Combining the experiments and simulations, we observe that the number of Ge atoms in octahedral site decreases and that in tetrahedral site increases. This modification in local order of GeTe originating from the low valence element will affect the crystallization behavior of amorphous GeTe, which is verified by differential scanning calorimetry and transmission electron microscope results. This work not only gives the analysis on the structural change of GeTe with Ag dopants but also provides a method to enhance the thermal stability of amorphous phase-change materials for memory and brain-inspired computing applications.

  1. Ultrafast Terahertz-Induced Response of GeSbTe Phase-Change Materials...

    Office of Scientific and Technical Information (OSTI)

    Title: Ultrafast Terahertz-Induced Response of GeSbTe Phase-Change Materials ... Resource Relation: Journal Name: Appl. Phys. Lett.; Journal Volume: 104; Journal Issue: 25 Research ...

  2. Connecting thermoelectric performance and topological-insulator behavior: Bi2Te3 and Bi2Te2Se from first principles

    DOE PAGES [OSTI]

    Shi, Hongliang; Parker, David S.; Du, Mao-Hua; Singh, David J.

    2015-01-20

    Thermoelectric performance is of interest for numerous applications such as waste-heat recovery and solid-state energy conversion and will be seen to be closely connected to topological-insulator behavior. In this paper, we here report first-principles transport and defect calculations for Bi2Te2Se in relation to Bi2Te3. The two compounds are found to contain remarkably different electronic structures in spite of being isostructural and isoelectronic. We also discuss these results in terms of the topological-insulator characteristics of these compounds.

  3. NREL Collaboration Boosts Potential for CdTe Solar Cells | PV | NREL

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Collaboration Boosts Potential for CdTe Solar Cells February 29, 2016 A critical milestone has been reached in cadmium telluride (CdTe) solar cell technology, helping pave the way for solar energy to directly compete with electricity generated by conventional energy sources. Scientists at the Energy Department's National Renewable Energy Laboratory (NREL) collaborated with researchers at Washington State University and the University of Tennessee to improve the maximum voltage available from a

  4. NREL Collaboration Boosts Potential for CdTe Solar Cells | Solar | NREL

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Collaboration Boosts Potential for CdTe Solar Cells February 29, 2016 A critical milestone has been reached in cadmium telluride (CdTe) solar cell technology, helping pave the way for solar energy to directly compete with electricity generated by conventional energy sources. Scientists at the Energy Department's National Renewable Energy Laboratory (NREL) collaborated with researchers at Washington State University and the University of Tennessee to improve the maximum voltage available from a

  5. Quantitative Determination of Grain-Boundary Recombination Velocity in CdTe

    Office of Scientific and Technical Information (OSTI)

    by Cathodoluminescence Measurements and Numerical Simulations (Journal Article) | SciTech Connect Quantitative Determination of Grain-Boundary Recombination Velocity in CdTe by Cathodoluminescence Measurements and Numerical Simulations Citation Details In-Document Search Title: Quantitative Determination of Grain-Boundary Recombination Velocity in CdTe by Cathodoluminescence Measurements and Numerical Simulations Authors: Kanevce, Ana ; Moseley, John ; Al-Jassim, Mowafak ; Metzger, Wyatt K.

  6. Deformation and shape transitions in hot rotating neutron deficient Te isotopes

    SciTech Connect

    Aggarwal, Mamta; Mazumdar, I.

    2009-08-15

    Evolution of the nuclear shapes and deformations under the influence of temperature and rotation is investigated in Te isotopes with neutron number ranging from the proton drip line to the stability valley. Spin dependent critical temperatures for the shape transitions in Te nuclei are computed. Shape transitions from prolate at low temperature and spin to oblate via triaxiality are seen with increasing neutron number and spin.

  7. Shape-controlled narrow-gap SnTe nanostructures: From nanocubes to nanorods

    Office of Scientific and Technical Information (OSTI)

    and nanowires (Journal Article) | SciTech Connect Shape-controlled narrow-gap SnTe nanostructures: From nanocubes to nanorods and nanowires Citation Details In-Document Search Title: Shape-controlled narrow-gap SnTe nanostructures: From nanocubes to nanorods and nanowires In this study, the rational design and synthesis of narrow-gap colloidal semiconductor nanocrystals (NCs) is an important step toward the next generation of solution-processable photovoltaics, photodetectors, and

  8. Spin glass in semiconducting KFe1.05Ag0.88Te2 single crystals

    DOE PAGES [OSTI]

    Ryu, H.; Lei, H.; Klobes, B.; Warren, J. B.; Hermann, R. P.; Petrovic, C.

    2015-05-26

    We report discovery of KFe1.05Ag0.88Te2 single crystals with semiconducting spin glass ground state. Composition and structure analysis suggest nearly stoichiometric I4/mmm space group but allow for the existence of vacancies, absent in long range semiconducting antiferromagnet KFe1.05Ag0.88Te2. The subtle change in stoichometry in Fe/Ag sublattice changes magnetic ground state but not conductivity, giving further insight into the semiconducting gap mechanism.

  9. NREL Collaboration Boosts Potential for CdTe Solar Cells - News Releases |

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    NREL NREL Collaboration Boosts Potential for CdTe Solar Cells February 29, 2016 A critical milestone has been reached in cadmium telluride (CdTe) solar cell technology, helping pave the way for solar energy to directly compete with electricity generated by conventional energy sources. Scientists at the Energy Department's National Renewable Energy Laboratory (NREL) collaborated with researchers at Washington State University and the University of Tennessee to improve the maximum voltage

  10. Ultrafast Terahertz-Induced Response of GeSbTe Phase-Change Materials

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect Journal Article: Ultrafast Terahertz-Induced Response of GeSbTe Phase-Change Materials Citation Details In-Document Search Title: Ultrafast Terahertz-Induced Response of GeSbTe Phase-Change Materials Authors: Shu, Michael J. ; Zalden, Peter ; Chen, Frank ; Weems, Ben ; Chatzakis, Ioannis ; Xiong, Feng ; Jeyasingh, Rakesh ; Hoffmann, Matthias C. ; Pop, Eric ; Wong, H.-S.Philip ; Wuttig, Matthias ; Lindenberg, Aaron M. Publication Date: 2014-07-08 OSTI

  11. PbTe/TAGS RTG Mars Environmental Survey (MESUR) mission

    SciTech Connect

    Schock, A. )

    1993-01-10

    The paper describes the results of studies on an RTG option for powering the global network of unmanned landers for NASA's Mars Environmental Survey (MESUR) mission. RTGs are essentially unaffected by diurnal and seasonal variations, Martian sandstorms, and landing site latitudes, and their waste heat can stabilize the temperatures of the landers and their payload. The RTG designs described in this paper are based on PbTe/TAGS thermoelectric elements, in contast to the SiGe-based RTGs the author described in previous publications. The presently described RTGs differ not only in the choice of thermoelectric materials but also in the use of much lower operating temperatures, conductive rather than radiative heat transfer, an inert cover gas instead of vacuum in the RTG's converter, and fibrous instead of multifoil thermal insulation. As in a previous Teledyne design, the Fairchild designs described in this paper employ flight-proven General Purpose Source modules and Close-Pack Arrays of thermoelectric converter modules. Illustrative point designs of RTGs producing 41 and 51 watts(e) at 28 volts are presented. The presented performance parameters were derived by detailed thermal, thermoelectric, and electrical analyses (including radiator geometry optimization) described in the paper. The Fairchild study showed that, with appropriate modifications, the Teledyne design can be scaled up to higher power levels, and it identified solutions to ensure adequate fuel clad ductility at launch temperatures and adequate thermal conductance from the thermoelectric cold ends to the RTG housing.

  12. Chiral magnetic effect in ZrTe5

    DOE PAGES [OSTI]

    Li, Q.; Kharzeev, D. E.; Zhang, C.; Huang, Y.; Pletikosic, I.; Fedorov, A. V.; Zhong, R. D.; Schneeloch, J. A.; Gu, G. D.; Valla, T.

    2016-02-08

    The chiral magnetic effect is the generation of electric current induced by chirality imbalance in the presence of magnetic field. It is a macroscopic manifestation of the quantum anomaly in relativistic field theory of chiral fermions (massless spin 1/2 particles with a definite projection of spin on momentum) - a dramatic phenomenon arising from a collective motion of particles and antiparticles in the Dirac sea. The recent discovery of Dirac semimetals with chiral quasi-particles opens a fascinating possibility to study this phenomenon in condensed matter experiments. Here we report on the measurement of magneto-transport in zirconium pentatelluride, ZrTe5 that providesmore » a strong evidence for the chiral magnetic effect. Our angleresolved photoemission spectroscopy experiments show that this material’s electronic structure is consistent with a 3D Dirac semimetal. We observe a large negative magnetoresistance when magnetic field is parallel with the current. The measured quadratic field dependence of the magnetoconductance is a clear indication of the chiral magnetic effect. The observed phenomenon stems from the effective transmutation of Dirac semimetal into a Weyl semimetal induced by the parallel electric and magnetic fields that represent a topologically nontrivial gauge field background. We expect that chiral magnetic effect may emerge in a wide class of materials that are near the transition between the trivial and topological insulators.« less

  13. DEGREE-SCALE GeV 'JETS' FROM ACTIVE AND DEAD TeV BLAZARS

    SciTech Connect

    Neronov, A.; Semikoz, D.; Kachelriess, M.; Ostapchenko, S.; Elyiv, A.

    2010-08-20

    We show that images of TeV blazars in the GeV energy band should contain, along with point-like sources, degree-scale jet-like extensions. These GeV extensions are the result of electromagnetic cascades initiated by TeV {gamma}-rays interacting with extragalactic background light and the deflection of the cascade electrons/positrons in extragalactic magnetic fields (EGMFs). Using Monte Carlo simulations, we study the spectral and timing properties of the degree-scale extensions in simulated GeV band images of TeV blazars. We show that the brightness profile of such degree-scale extensions can be used to infer the light curve of the primary TeV {gamma}-ray source over the past 10{sup 7} yr, i.e., over a time scale comparable to the lifetime of the parent active galactic nucleus. This implies that the degree-scale jet-like GeV emission could be detected not only near known active TeV blazars, but also from 'TeV blazar remnants', whose central engines were switched off up to 10 million years ago. Since the brightness profile of the GeV 'jets' depends on the strength and the structure of the EGMF, their observation provides additional information about the EGMF.

  14. Oxygen Incorporation During Fabrication of Substrate CdTe Photovoltaic Devices: Preprint

    SciTech Connect

    Duenow, J. N.; Dhere, R. G.; Kuciauskas, D.; Li, J. V.; Pankow, J. W.; DeHart, C. M.; Gessert, T. A.

    2012-06-01

    Recently, CdTe photovoltaic (PV) devices fabricated in the nonstandard substrate configuration have attracted increasing interest because of their potential compatibility with flexible substrates such as metal foils and polymer films. This compatibility could lead to the suitability of CdTe for roll-to-roll processing and building-integrated PV. Currently, however, the efficiencies of substrate CdTe devices reported in the literature are significantly lower ({approx}6%-8%) than those of high-performance superstrate devices ({approx}17%) because of significantly lower open-circuit voltage (Voc) and fill factor (FF). In our recent device development efforts, we have found that processing parameters required to fabricate high-efficiency substrate CdTe PV devices differ from those necessary for traditional superstrate CdTe devices. Here, we investigate how oxygen incorporation in the CdTe deposition, CdCl2 heat treatment, CdS deposition, and post-deposition heat treatment affect device characteristics through their effects on the junction. By adjusting whether oxygen is incorporated during these processing steps, we have achieved Voc values greater than 860 mV and efficiencies greater than 10%.

  15. Ion-beam treatment to prepare surfaces of p-CdTe films

    DOEpatents

    Gessert, Timothy A.

    2001-01-01

    A method of making a low-resistance electrical contact between a p-CdTe layer and outer contact layers by ion beam processing comprising: a) placing a CdS/CdTe device into a chamber and evacuating the chamber; b) orienting the p-CdTe side of the CdS/CdTe layer so that it faces apparatus capable of generating Ar atoms and ions of preferred energy and directionality; c) introducing Ar and igniting the area of apparatus capable of generating Ar atoms and ions of preferred energy and directionality in a manner so that during ion exposure, the source-to-substrate distance is maintained such that it is less than the mean-free path or diffusion length of the Ar atoms and ions at the vacuum pressure; d) allowing exposure of the p-CdTe side of the device to said ion beam for a period less than about 5 minutes; and e) imparting movement to the substrate to control the real uniformity of the ion-beam exposure on the p-CdTe side of the device.

  16. Enhanced thermoelectric performance in Cd doped CuInTe{sub 2} compounds

    SciTech Connect

    Cheng, N.; Liu, R.; Bai, S.; Shi, X. Chen, L.

    2014-04-28

    CuIn{sub 1?x}Cd{sub x}Te{sub 2} materials (x?=?0, 0.02, 0.05, and 0.1) are prepared using melting-annealing method and the highly densified bulk samples are obtained through Spark Plasma Sintering. The X-ray diffraction data confirm that nearly pure chalcopyrite structures are obtained in all the samples. Due to the substitution of Cd at In sites, the carrier concentration is greatly increased, leading to much enhanced electrical conductivity and power factor. The single parabolic band model is used to describe the electrical transport properties of CuInTe{sub 2} and the low temperature Hall mobility is also modeled. By combing theoretical model and experiment data, the optimum carrier concentration in CuInTe{sub 2} is proposed to explain the greatly enhanced power factors in the Cd doped CuInTe{sub 2}. In addition, the thermal conductivity is reduced by extra phonon scattering due to the atomic mass and radius fluctuations between Cd and In atoms. The maximum zTs are observed in CuIn{sub 0.98}Cd{sub 0.02}Te{sub 2} and CuIn{sub 0.9}Cd{sub 0.1}Te{sub 2} samples, which are improved by over 100% at room temperature and around 20% at 600?K.

  17. Ultrathin nanosheets of CrSiTe3. A semiconducting two-dimensional ferromagnetic material

    DOE PAGES [OSTI]

    Lin, Ming -Wei; Zhung, Houlong L.; Yan, Jiaqiang; Ward, Thomas Zac; Puretzky, Alexander A.; Rouleau, Christopher M.; Gai, Zheng; Liang, Liangbo; Meunier, Vincent; Ganesh, Panchapakesan; et al

    2015-11-27

    Finite range ferromagnetism and antiferromagnetism in two-dimensional (2D) systems within an isotropic Heisenberg model at non-zero temperature were originally proposed to be impossible. However, recent theoretical studies using an Ising model have recently shown that 2D magnetic crystals can exhibit magnetism. Experimental verification of existing 2D magnetic crystals in this system has remained elusive. In this work we for the first time exfoliate the CrSiTe3, a bulk ferromagnetic semiconductor, to mono- and few-layer 2D crystals onto a Si/SiO2 substrate. The Raman spectra show the good stability and high quality of the exfoliated flakes, consistent with the computed phonon spectra ofmore » 2D CrSiTe3, giving a strong evidence for the existence of 2D CrSiTe3 crystals. When the thickness of the CrSiTe3 crystals is reduced to few-layers, we observed a clear change in resistivity at 80~120 K, consistent with the theoretical calculations on the Curie temperature (Tc) of ~80 K for the magnetic ordering of 2D CrSiTe3 crystals. As a result, the ferromagnetic mono- and few-layer 2D CrSiTe3 indicated here should enable numerous applications in nano-spintronics.« less

  18. Enhanced thermoelectric performance in Cu-intercalated BiTeI by compensation weakening induced mobility improvement

    DOE PAGES [OSTI]

    Wu, Lihua; Yang, Jiong; Chi, Miaofang; Wang, Shanyu; Wei, Ping; Zhang, Wenqing; Chen, Lidong; Yang, Jihui

    2015-09-23

    The low weighted carrier mobility has long been considered to be the key challenge for improvement of thermoelectric (TE) performance in BiTeI. The Rashba-effect-induced two-dimensional density of states in this bulk semiconductor is beneficial for thermopower enhancement, which makes it a prospective compound for TE applications. In this report, we show that intercalation of minor Cu-dopants can substantially alter the equilibria of defect reactions, selectively mediate the donor-acceptor compensation, and tune the defect concentration in the carrier conductive network. Consequently, the potential fluctuations responsible for electron scattering are reduced and the carrier mobility in BiTeI can be enhanced by amore » factor of two to three between 10 K and 300 K. The carrier concentration can also be optimized by tuning the Te/I composition ratio, leading to higher thermopower in this Rashba system. Cu-intercalation in BiTeI gives rise to higher power factor, slightly lower lattice thermal conductivity, and consequently improved figure of merit. Compared with pristine BiTe0.98I1.02, the TE performance in Cu0.05BiTeI reveals a 150% and 20% enhancement at 300 and 520 K, respectively. Ultimately, these results demonstrate that defect equilibria mediated by selective doping in complex TE and energy materials could be an effective approach to carrier mobility and performance optimization.« less

  19. Enhanced thermoelectric performance in Cu-intercalated BiTeI by compensation weakening induced mobility improvement

    SciTech Connect

    Wu, Lihua; Yang, Jiong; Chi, Miaofang; Wang, Shanyu; Wei, Ping; Zhang, Wenqing; Chen, Lidong; Yang, Jihui

    2015-09-23

    The low weighted carrier mobility has long been considered to be the key challenge for improvement of thermoelectric (TE) performance in BiTeI. The Rashba-effect-induced two-dimensional density of states in this bulk semiconductor is beneficial for thermopower enhancement, which makes it a prospective compound for TE applications. In this report, we show that intercalation of minor Cu-dopants can substantially alter the equilibria of defect reactions, selectively mediate the donor-acceptor compensation, and tune the defect concentration in the carrier conductive network. Consequently, the potential fluctuations responsible for electron scattering are reduced and the carrier mobility in BiTeI can be enhanced by a factor of two to three between 10 K and 300 K. The carrier concentration can also be optimized by tuning the Te/I composition ratio, leading to higher thermopower in this Rashba system. Cu-intercalation in BiTeI gives rise to higher power factor, slightly lower lattice thermal conductivity, and consequently improved figure of merit. Compared with pristine BiTe0.98I1.02, the TE performance in Cu0.05BiTeI reveals a 150% and 20% enhancement at 300 and 520 K, respectively. Ultimately, these results demonstrate that defect equilibria mediated by selective doping in complex TE and energy materials could be an effective approach to carrier mobility and performance optimization.

  20. Structural characterization of Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} as a function of temperature using neutron powder diffraction and extended X-ray absorption fine structure techniques

    SciTech Connect

    Mansour, A. N.; Wong-Ng, W.; Huang, Q.; Tang, W.; Thompson, A.; Sharp, J.

    2014-08-28

    The structure of Bi{sub 2}Te{sub 3} (Seebeck coefficient Standard Reference Material (SRM™ 3451)) and the related phase Sb{sub 2}Te{sub 3} have been characterized as a function of temperature using the neutron powder diffraction (NPD) and the extended X-ray absorption fine structure (EXAFS) techniques. The neutron structural studies were carried out from 20 K to 300 K for Bi{sub 2}Te{sub 3} and from 10 K to 298 K for Sb{sub 2}Te{sub 3}. The EXAFS technique for studying the local structure of the two compounds was conducted from 19 K to 298 K. Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} are isostructural, with a space group of R3{sup ¯}m. The structure consists of repeated quintuple layers of atoms, Te2-M-Te1-M-Te2 (where M = Bi or Sb) stacking along the c-axis of the unit cell. EXAFS was used to examine the bond distances and static and thermal disorders for the first three shells of Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} as a function of temperature. The temperature dependencies of thermal disorders were analyzed using the Debye and Einstein models for lattice vibrations. The Debye and Einstein temperatures for the first two shells of Bi{sub 2}Te{sub 3} are similar to those of Sb{sub 2}Te{sub 3} within the uncertainty in the data. However, the Debye and Einstein temperatures for the third shell of Bi-Bi are significantly lower than those of the third shell of Sb-Sb. The Einstein temperature for the third shell is consistent with a soft phonon mode in both Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3}. The lower Einstein temperature of Bi-Bi relative to Sb-Sb is consistent with the lower value of thermal conductivity of Bi{sub 2}Te{sub 3} relative to Sb{sub 2}Te{sub 3}.

  1. Carrier lifetimes and interface recombination velocities in CdTe/Mg{sub x}Cd{sub 1−x}Te double heterostructures with different Mg compositions grown by molecular beam epitaxy

    SciTech Connect

    Liu, Shi; Lassise, Maxwell B.; Zhao, Yuan; Zhang, Yong-Hang; Zhao, Xin-Hao; Campbell, Calli M.

    2015-07-27

    The interface recombination velocities of CdTe/Mg{sub x}Cd{sub 1−x}Te double heterostructure (DH) samples with different CdTe layer thicknesses and Mg compositions are studied using time-resolved photoluminescence measurements. A lowest interface recombination velocity of 30 ± 10 cm/s has been measured for the CdTe/Mg{sub 0.46}Cd{sub 0.54}Te interface, and a longest carrier lifetime of 0.83 μs has been observed for the studied DHs. These values are very close to the best reported numbers for GaAs/AlGaAs DHs. The impact of carrier escape through thermionic emission over the MgCdTe barrier on the recombination process in the DHs is also studied.

  2. Actinide (III) solubility in WIPP Brine: data summary and recommendations

    SciTech Connect

    Borkowski, Marian; Lucchini, Jean-Francois; Richmann, Michael K.; Reed, Donald T.

    2009-09-01

    The solubility of actinides in the +3 oxidation state is an important input into the Waste Isolation Pilot Plant (WIPP) performance assessment (PA) models that calculate potential actinide release from the WIPP repository. In this context, the solubility of neodymium(III) was determined as a function of pH, carbonate concentration, and WIPP brine composition. Additionally, we conducted a literature review on the solubility of +3 actinides under WIPP-related conditions. Neodymium(III) was used as a redox-invariant analog for the +3 oxidation state of americium and plutonium, which is the oxidation state that accounts for over 90% of the potential release from the WIPP through the dissolved brine release (DBR) mechanism, based on current WIPP performance assessment assumptions. These solubility data extend past studies to brine compositions that are more WIPP-relevant and cover a broader range of experimental conditions than past studies.

  3. Reaction-based reactive transport modeling of Fe(III)

    SciTech Connect

    Kemner, K.M.; Kelly, S.D.; Burgos, Bill; Roden, Eric

    2006-06-01

    This research project (started Fall 2004) was funded by a grant to Argonne National Laboratory, The Pennsylvania State University, and The University of Alabama in the Integrative Studies Element of the NABIR Program (DE-FG04-ER63914/63915/63196). Dr. Eric Roden, formerly at The University of Alabama, is now at the University of Wisconsin, Madison. Our project focuses on the development of a mechanistic understanding and quantitative models of coupled Fe(III)/U(VI) reduction in FRC Area 2 sediments. This work builds on our previous studies of microbial Fe(III) and U(VI) reduction, and is directly aligned with the Scheibe et al. NABIR FRC Field Project at Area 2.

  4. Disorder-induced anomalously signed Hall effect in crystalline GeTe/Sb{sub 2}Te{sub 3} superlattice-like materials

    SciTech Connect

    Tong, H.; Yu, N. N.; Yang, Z.; Cheng, X. M.; Miao, X. S.

    2015-08-21

    Opposite to the almost persistent p-type conductivity of the crystalline chalcogenides along the GeTe-Sb{sub 2}Te{sub 3} tie line, n-type Hall mobility is observed in crystalline GeTe/Sb{sub 2}Te{sub 3} superlattice-like material (SLL) with a short period length. We suggest that this unusual carrier characteristic originates from the structural disorder introduced by the lattice strain and dangling bonds at the SLL interfaces, which makes the crystalline SLLs behave like the amorphous chalcogenides. Detailed structural disorder in crystalline SLL has been studied by Raman scattering, X-ray photoelectron spectroscopy, as well as Variable-energy positron annihilation spectroscopy measurements. First-principles calculations results show that this structural disorder gives rise to three-site junctions that dominate the charge transport as the period length decreases and result in the anomalously signed Hall effect in the crystalline SLL. Our findings indicate a similar tetrahedral structure in the amorphous and crystalline states of SLLs, which can significantly reduce the entropy difference. Due to the reduced entropy loss and increased resistivity of crystalline phase introduced by disorder, it is not surprising that the SLLs exhibit extremely lower RESET current and power consumption.

  5. The electronic structure and thermoelectric properties of BiTl{sub 9}Te{sub 6} and SbTl{sub 9}Te{sub 6}: First-principles calculations

    SciTech Connect

    Guo, Li Bin; Ye, Lingyun; Wang, Yuan Xu Yang, Jue Ming; Yan, Yu Li; Ren, Feng Zhu

    2015-12-21

    The electronic structure and thermoelectric properties of MTl{sub 9}Te{sub 6} (M = Bi, Sb) were studied using density functional theory and the semiclassical Boltzmann theory. It is found that the band gaps of BiTl{sub 9}Te{sub 6} and SbTl{sub 9}Te{sub 6} are equal to 0.59 eV and 0.72 eV, respectively. The relative large band gap and strong coupling between Sb s and Te p are helpful to the thermoelectric properties of SbTl{sub 9}Te{sub 6}. Near the bottom of the conduction bands, the number of band valleys of SbTl{sub 9}Te{sub 6} is four and is larger than that of BiTl{sub 9}Te{sub 6} (two band valleys), which will increase its Seebeck coefficient. Although BiTl{sub 9}Te{sub 6} has a larger electrical conductivity relative to relaxation time (σ/τ) along the z-direction than that of SbTl{sub 9}Te{sub 6}, the results show that the transport properties of SbTl{sub 9}Te{sub 6} are better than those of BiTl{sub 9}Te{sub 6} possibly due to its large Seebeck coefficient. The maximum value of power factor relative to relaxation time (S{sup 2}σ/τ) for SbTl{sub 9}Te{sub 6} reaches 4.30 × 10{sup 11 }W/K{sup 2} m s at 900 K, that is, originated from its relatively large Seebeck coefficient, suggesting its promising thermoelectric performance at high temperature.

  6. Method of fabricating vertically aligned group III-V nanowires

    DOEpatents

    Wang, George T; Li, Qiming

    2014-11-25

    A top-down method of fabricating vertically aligned Group III-V micro- and nanowires uses a two-step etch process that adds a selective anisotropic wet etch after an initial plasma etch to remove the dry etch damage while enabling micro/nanowires with straight and smooth faceted sidewalls and controllable diameters independent of pitch. The method enables the fabrication of nanowire lasers, LEDs, and solar cells.

  7. Inverted Metamorphic III-V Tandem Device for Photoelectrochemical Water

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Splitting - Energy Innovation Portal Vehicles and Fuels Vehicles and Fuels Solar Photovoltaic Solar Photovoltaic Hydrogen and Fuel Cell Hydrogen and Fuel Cell Find More Like This Return to Search Inverted Metamorphic III-V Tandem Device for Photoelectrochemical Water Splitting National Renewable Energy Laboratory Contact NREL About This Technology Technology Marketing Summary The process of photoelectrochemical (PEC) water splitting is a promising pathway for the generation of hydrogen due

  8. INDUCTRACK III CONFIGURATION - A MAGLEV SYSTEM FOR HIGH LOADS - Energy

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Innovation Portal 100064929 Site Map Printable Version Share this resource About Search Categories (15) Advanced Materials Biomass and Biofuels Building Energy Efficiency Electricity Transmission Energy Analysis Energy Storage Geothermal Hydrogen and Fuel Cell Hydropower, Wave and Tidal Industrial Technologies Solar Photovoltaic Solar Thermal Startup America Vehicles and Fuels Wind Energy Partners (27) Visual Patent Search Success Stories Return to Search INDUCTRACK III CONFIGURATION - A

  9. PART III … LIST OF DOCUMENTS, EXHIBITS, AND OTHER ATTACHMENTS

    National Nuclear Security Administration (NNSA)

    Page 130 PART III - LIST OF DOCUMENTS, EXHIBITS, AND OTHER ATTACHMENTS SECTION J LIST OF APPENDICES - TABLE OF CONTENTS Appendix A Statement of Work Appendix B Award Fee Plan Appendix C Transition Plan Appendix D Sensitive Foreign Nations Control Appendix E Performance Guarantee Agreement(s) Appendix F List of Applicable Directives Appendix G Personnel Appendix Appendix H Key Personnel Appendix I Small Business Subcontracting Plan Appendix J Diversity Plan Guidance Appendix K Program Management

  10. Policy Flash 2014-27 Implementation of Division D, Titles III...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    of Division D, Titles III and V, and Division E, Title VII of the ... Policy Flash 2014-27 Implementation of Division D, Titles III and V, and Division E, Title ...

  11. Advances in Computational Methods for X-Ray Optics III (Conference...

    Office of Scientific and Technical Information (OSTI)

    Conference: Advances in Computational Methods for X-Ray Optics III Citation Details In-Document Search Title: Advances in Computational Methods for X-Ray Optics III Authors: ...

  12. DE-EM-0001971 WIPP M&O J-15 PART III - LIST OF DOCUMENTS, EXHIBITS...

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    15 PART III - LIST OF DOCUMENTS, EXHIBITS AND OTHER ATTACHMENTS SECTION J ATTACHMENT D: ... WIPP M&O J-16 PART III - LIST OF DOCUMENTS, EXHIBITS AND OTHER ATTACHMENTS SECTION ...

  13. Band structure effects on resonant tunneling in III-V quantum...

    Office of Scientific and Technical Information (OSTI)

    in III-V quantum wells versus two-dimensional vertical heterostructures Citation Details In-Document Search Title: Band structure effects on resonant tunneling in III-V quantum ...

  14. EERC Center for Biomass Utilization 2008-2010. Phases I-III ...

    Office of Scientific and Technical Information (OSTI)

    Technical Report: EERC Center for Biomass Utilization 2008-2010. Phases I-III Citation Details In-Document Search Title: EERC Center for Biomass Utilization 2008-2010. Phases I-III ...

  15. NAC 444.731 - Class III Solid Waste Management Systems | Open...

    OpenEI (Open Energy Information) [EERE & EIA]

    .731 - Class III Solid Waste Management Systems Jump to: navigation, search OpenEI Reference LibraryAdd to library Legal Document- RegulationRegulation: NAC 444.731 - Class III...

  16. Major Design Changes Late in Title II or early in Title III Can...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Design Changes Late in Title II or early in Title III Can Be Costly PMLL Identifier: ... design changes occur late in Title II or early in Title III Discussion: Numerous ...

  17. Chemical trend of the formation energies of the group-III and...

    Office of Scientific and Technical Information (OSTI)

    Chemical trend of the formation energies of the group-III and group-V dopants in Si quantum dots Prev Next Title: Chemical trend of the formation energies of the group-III ...

  18. The role of oxygen in CdS/CdTe solar cells deposited by close-spaced sublimation

    SciTech Connect

    Rose, D.H.; Levi, D.H.; Matson, R.J.

    1996-05-01

    The presence of oxygen during close-spaced sublimation (CSS) of CdTe has been previously reported to be essential for high-efficiency CdS/CdTe solar cells because it increases the acceptor density in the absorber. The authors find that the presence of oxygen during CSS increases the nucleation site density of CdTe, thus decreasing pinhole density and grain size. Photoluminescence showed that oxygen decreases material quality in the bulk of the CdTe film, but positively impacts the critical CdS/CdTe interface. Through device characterization the authors were unable to verify an increase in acceptor density with increased oxygen. These results, along with the achievement of high-efficiency cells (13% AM1.5) without the use of oxygen, led the authors to conclude that the use of oxygen during CSS deposition of CdTe can be useful but is not essential.

  19. First-epoch VLBA imaging of 20 new TeV blazars

    SciTech Connect

    Piner, B. Glenn; Edwards, Philip G.

    2014-12-10

    We present Very Long Baseline Array (VLBA) images of 20 TeV blazars not previously well studied on the parsec scale. All 20 of these sources are high-frequency peaked BL Lac objects (HBLs). Observations were made between August and December of 2013 at a frequency of 8.4 GHz. These observations represent the first epoch of a VLBA monitoring campaign on these blazars, and they significantly increase the fraction of TeV HBLs studied with high-resolution imaging. The peak very long baseline interferometry (VLBI) flux densities of these sources range from ∼10 to ∼100 mJy bm{sup –1}, and parsec-scale jet structure is detected in all sources. About half of the VLBI cores are resolved, with brightness temperature upper limits of a few times 10{sup 10} K, and we find that a brightness temperature of ∼2 × 10{sup 10} K is consistent with the VLBI data for all but one of the sources. Such brightness temperatures do not require any relativistic beaming to reduce the observed value below commonly invoked intrinsic limits; however, the lack of detection of counterjets does place a modest limit on the bulk Lorentz factor of γ ≳ 2. These data are thus consistent with a picture where weak-jet sources like the TeV HBLs develop significant velocity structures on parsec scales. We also extend consideration to the full sample of TeV HBLs by combining the new VLBI data with VLBI and gamma-ray data from the literature. By comparing measured VLBI and TeV fluxes to samples with intrinsically uncorrelated luminosities generated by Monte Carlo simulations, we find a marginally significant correlation between the VLBI and TeV fluxes for the full TeV HBL sample.

  20. Development of a Total Energy, Environment and Asset Management (TE2AM tm) Curriculum

    SciTech Connect

    2012-12-31

    The University of Wisconsin Department of Engineering Professional Development (EPD) has completed the sponsored project entitled, Development of a Total Energy, Environment and Asset Management (TE2AM™) Curriculum. The project involved the development of a structured professional development program to improve the knowledge, skills, capabilities, and competencies of engineers and operators of commercial buildings. TE2AM™ advances a radically different approach to commercial building design, operation, maintenance, and end-­‐of-­‐life disposition. By employing asset management principles to the lifecycle of a commercial building, owners and occupants will realize improved building performance, reduced energy consumption and positive environmental impacts. Through our commercialization plan, we intend to offer TE2AM™ courses and certificates to the professional community and continuously improve TE2AM™ course materials. The TE2AM™ project supports the DOE Strategic Theme 1 -­‐ Energy Security; and will further advance the DOE Strategic Goal 1.4 Energy Productivity. Through participation in the TE2AM™ curriculum, engineers and operators of commercial buildings will be eligible for a professional certificate; denoting the completion of a prescribed series of learning activities. The project involved a comprehensive, rigorous approach to curriculum development, and accomplished the following goals: 1. Identify, analyze and prioritize key learning needs of engineers, architects and technical professionals as operators of commercial buildings. 2. Design and develop TE2AM™ curricula and instructional strategies to meet learning needs of the target learning community. 3. Establish partnerships with the sponsor and key stakeholders to enhance the development and delivery of learning programs. 4. Successfully commercialize and sustain the training and certificate programs for a substantial time following the term of the award. The project team was

  1. Nanowire-templated lateral epitaxial growth of non-polar group III nitrides

    DOEpatents

    Wang, George T.; Li, Qiming; Creighton, J. Randall

    2010-03-02

    A method for growing high quality, nonpolar Group III nitrides using lateral growth from Group III nitride nanowires. The method of nanowire-templated lateral epitaxial growth (NTLEG) employs crystallographically aligned, substantially vertical Group III nitride nanowire arrays grown by metal-catalyzed metal-organic chemical vapor deposition (MOCVD) as templates for the lateral growth and coalescence of virtually crack-free Group III nitride films. This method requires no patterning or separate nitride growth step.

  2. Vibrational properties of epitaxial Bi{sub 4}Te{sub 3} films as studied by Raman spectroscopy

    SciTech Connect

    Xu, Hao; Pan, Wenwu; Chen, Qimiao; Wu, Xiaoyan; Song, Yuxin E-mail: shumin@chalmers.se; Gong, Qian; Lu, Pengfei; Wang, Shumin E-mail: shumin@chalmers.se

    2015-08-15

    Bi{sub 4}Te{sub 3}, as one of the phases of the binary Bi–Te system, shares many similarities with Bi{sub 2}Te{sub 3}, which is known as a topological insulator and thermoelectric material. We report the micro-Raman spectroscopy study of 50 nm Bi{sub 4}Te{sub 3} films on Si substrates prepared by molecular beam epitaxy. Raman spectra of Bi{sub 4}Te{sub 3} films completely resolve the six predicted Raman-active phonon modes for the first time. Structural features and Raman tensors of Bi{sub 4}Te{sub 3} films are introduced. According to the wavenumbers and assignments of the six eigenpeaks in the Raman spectra of Bi{sub 4}Te{sub 3} films, it is found that the Raman-active phonon oscillations in Bi{sub 4}Te{sub 3} films exhibit the vibrational properties of those in both Bi and Bi{sub 2}Te{sub 3} films.

  3. A Manufacturing Cost Analysis Relevant to Single- and Dual-Junction Photovoltaic Cells Fabricated with III-Vs and III-Vs Grown on Silicon

    Energy.gov [DOE]

    This study examines the current, mid-term, and long-term manufacturing costs for III-Vs deposited by traditional Metal Organic Vapor Phase Epitaxy.

  4. Reduction of Fermi level pinning and recombination at polycrystalline CdTe surfaces by laser irradiation

    SciTech Connect

    Simonds, Brian J.; Kheraj, Vipul; Palekis, Vasilios; Ferekides, Christos; Scarpulla, Michael A.

    2015-06-14

    Laser processing of polycrystalline CdTe is a promising approach that could potentially increase module manufacturing throughput while reducing capital expenditure costs. For these benefits to be realized, the basic effects of laser irradiation on CdTe must be ascertained. In this study, we utilize surface photovoltage spectroscopy (SPS) to investigate the changes to the electronic properties of the surface of polycrystalline CdTe solar cell stacks induced by continuous-wave laser annealing. The experimental data explained within a model consisting of two space charge regions, one at the CdTe/air interface and one at the CdTe/CdS junction, are used to interpret our SPS results. The frequency dependence and phase spectra of the SPS signal are also discussed. To support the SPS findings, low-temperature spectrally-resolved photoluminescence and time-resolved photoluminescence were also measured. The data show that a modest laser treatment of 250 W/cm{sup 2} with a dwell time of 20 s is sufficient to reduce the effects of Fermi level pinning at the surface due to surface defects.

  5. Intergalactic magnetic fields and gamma-ray observations of extreme TeV blazars

    SciTech Connect

    Arlen, Timothy C.; Vassilev, Vladimir V.; Weisgarber, Thomas; Wakely, Scott P.; Shafi, S. Yusef

    2014-11-20

    The intergalactic magnetic field (IGMF) in cosmic voids can be indirectly probed through its effect on electromagnetic cascades initiated by a source of teraelectronvolt (TeV) gamma-rays, such as active galactic nuclei (AGNs). AGNs that are sufficiently luminous at TeV energies, 'extreme TeV blazars', can produce detectable levels of secondary radiation from inverse Compton scattering of the electrons in the cascade, provided that the IGMF is not too large. We review recent work in the literature that utilizes this idea to derive constraints on the IGMF for three TeV-detected blazars, 1ES 0229+200, 1ES 1218+304, and RGB J0710+591, and we also investigate four other hard-spectrum TeV blazars in the same framework. Through a recently developed, detailed, three-dimensional particle-tracking Monte Carlo code, incorporating all major effects of QED and cosmological expansion, we research the effects of major uncertainties, such as the spectral properties of the source, uncertainty in the ultraviolet and far-infrared extragalactic background light, undersampled very high energy (energy ≥100 GeV) coverage, past history of gamma-ray emission, source versus observer geometry, and the jet AGN Doppler factor. The implications of these effects on the recently reported lower limits of the IGMF are thoroughly examined to conclude that the presently available data are compatible with a zero-IGMF hypothesis.

  6. Static atomic displacements in a CdTe epitaxial layer on a GaAs substrate

    SciTech Connect

    Horning, R.D.; Staudenmann, J.

    1987-05-25

    A (001)CdTe epitaxial layer on a (001)GaAs substrate was studied by x-ray diffraction between 10 and 360 K. The CdTe growth took place at 380 /sup 0/C in a vertical gas flow metalorganic chemical vapor deposition reactor. Lattice parameters and integrated intensities of both the substrate and the epitaxial layer using the (00l) and (hhh) Bragg reflections reveal three important features. Firstly, the GaAs substrate does not exhibit severe strain after deposition and it is as perfect as a bulk GaAs. Secondly, the CdTe unit cell distorts tetragonally with a/sub perpendicular/>a/sub parallel/ below 300 K. The decay of the (00l) reflection intensities as a function of the temperature yields a Debye temperature of 142 K, the same value as for bulk CdTe. Thirdly, a temperature-dependent isotropic static displacement of the Cd and the Te atoms is introduced to account for the anomalous behavior of the (hhh) intensities.

  7. An Experiment to Locate the Site of TeV Flaring in M87

    SciTech Connect

    Harris, D.E.; /Harvard-Smithsonian Ctr. Astrophys.; Massaro, F.; /Harvard-Smithsonian Ctr. Astrophys. /KIPAC, Menlo Park /SLAC; Cheung, C.C.; /Natl. Acad. Sci. /Naval Research Lab, Wash., D.C.; Horns, D.; Raue, M.; /Hamburg U.; Stawarz, L.; /JAXA, Sagamihara /Jagiellonian U., Astron. Observ.; Wagner, S.; /Heidelberg Observ.; Colin, P.; /Munich, Max Planck Inst.; Mazin, D.; /Barcelona, IFAE; Wagner, R.; /Munich, Max Planck Inst.; Beilicke, M.; /McDonnell Ctr. Space Sci.; LeBohec, S.; Hui, M.; /Utah U.; Mukherjee, R.; /Barnard Coll.

    2012-05-18

    We describe a Chandra X-ray target-of-opportunity project designed to isolate the site of TeV flaring in the radio galaxy M87. To date, we have triggered the Chandra observations only once (2010 April) and by the time of the first of our nine observations, the TeV flare had ended. However, we found that the X-ray intensity of the unresolved nucleus was at an elevated level for our first observation. Of the more than 60 Chandra observations we have made of the M87 jet covering nine years, the nucleus was measured at a comparably high level only three times. Two of these occasions can be associated with TeV flaring, and at the time of the third event, there were no TeV monitoring activities. From the rapidity of the intensity drop of the nucleus, we infer that the size of the emitting region is of order a few light days x the unknown beaming factor; comparable to the same sort of estimate for the TeV emitting region. We also find evidence of spectral evolution in the X-ray band which seems consistent with radiative losses affecting the non-thermal population of the emitting electrons within the unresolved nucleus.

  8. Systematic study of doping dependence on linear magnetoresistance in p-PbTe

    SciTech Connect

    Schneider, J. M.; Chitta, V. A.; Oliveira, N. F.; Peres, M. L. Castro, S. de; Soares, D. A. W.; Wiedmann, S.; Zeitler, U.; Abramof, E.; Rappl, P. H. O.; Mengui, U. A.

    2014-10-20

    We report on a large linear magnetoresistance effect observed in doped p-PbTe films. While undoped p-PbTe reveals a sublinear magnetoresistance, p-PbTe films doped with BaF{sub 2} exhibit a transition to a nearly perfect linear magnetoresistance behaviour that is persistent up to 30?T. The linear magnetoresistance slope ?R/?B is to a good approximation, independent of temperature. This is in agreement with the theory of Quantum Linear Magnetoresistance. We also performed magnetoresistance simulations using a classical model of linear magnetoresistance. We found that this model fails to explain the experimental data. A systematic study of the doping dependence reveals that the linear magnetoresistance response has a maximum for small BaF{sub 2} doping levels and diminishes rapidly for increasing doping levels. Exploiting the huge impact of doping on the linear magnetoresistance signal could lead to new classes of devices with giant magnetoresistance behavior.

  9. Effects of Stoichiometry in Undoped CdTe Heteroepilayers on Si

    SciTech Connect

    Gessert, Timothy A.; Colegrove, Eric; Stafford, Brian; Gao, Wei; Sivananthan, Siva; Kuciauskas, Darius; Moutinho, Helio; Farrell, Stuart; Barnes, Teresa

    2015-06-14

    Crystalline CdTe layers have been grown heteroepitaxially onto crystalline Si substrates to establish material parameters needed for advanced photovoltaic (PV) device development and related simulation. These studies suggest that additional availability of the intrinsic anion (i.e., Te) during molecular beam epitaxy deposition can improve structural and optoelectronic quality of the epilayer and the interface between Si substrate and the epilayer. This is seen most notably for thin CdTe epitaxial films (<; ~10 micrometers). Although these observations are foundationally important, they are also relevant to envisioned high-performance multijunction II-VI alloy PV devices-where thin layers will be required to achieve production costs aligned with market constraints.

  10. Ba{sub 2}TeO as an optoelectronic material: First-principles study

    SciTech Connect

    Sun, Jifeng; Shi, Hongliang; Du, Mao-Hua; Singh, David J.; Siegrist, Theo

    2015-05-21

    The band structure, optical, and defects properties of Ba{sub 2}TeO are systematically investigated using density functional theory with a view to understanding its potential as an optoelectronic or transparent conducting material. Ba{sub 2}TeO crystallizes with tetragonal structure (space group P4/nmm) and with a 2.93 eV optical bandgap [Besara et al., J. Solid State Chem. 222, 60 (2015)]. We find relatively modest band masses for both electrons and holes suggesting applications. Optical properties show infrared-red absorption when doped. This could potentially be useful for combining wavelength filtering and transparent conducting functions. Furthermore, our defect calculations show that Ba{sub 2}TeO is intrinsically p-type conducting under Ba-poor condition. However, the spontaneous formation of the donor defects may constrain the p-type transport properties and would need to be addressed to enable applications.

  11. Experimental Realization of a Three-Dimensional Topological Insulator, Bi 2Te3

    SciTech Connect

    Siemons, W.

    2010-02-24

    Three-dimensional topological insulators are a new state of quantum matter with a bulk gap and odd number of relativistic Dirac fermions on the surface. By investigating the surface state of Bi{sub 2}Te{sub 3} with angle-resolved photoemission spectroscopy, we demonstrate that the surface state consists of a single nondegenerate Dirac cone. Furthermore, with appropriate hole doping, the Fermi level can be tuned to intersect only the surface states, indicating a full energy gap for the bulk states. Our results establish that Bi{sub 2}Te{sub 3} is a simple model system for the three-dimensional topological insulator with a single Dirac cone on the surface. The large bulk gap of Bi{sub 2}Te{sub 3} also points to promising potential for high-temperature spintronics applications.

  12. Superconducting thin films of (100) and (111) oriented indium doped topological crystalline insulator SnTe

    DOE PAGES [OSTI]

    Si, W.; Zhang, C.; Wu, L.; Ozaki, T.; Gu, G.; Li, Q.

    2015-09-01

    Recent discovery of the topological crystalline insulator SnTe has triggered a search for topological superconductors, which have potential application to topological quantum computing. The present work reports on the superconducting properties of indium doped SnTe thin films. The (100) and (111) oriented thin films were epitaxially grown by pulsed-laser deposition on (100) and (111) BaF2 crystalline substrates respectively. The onset superconducting transition temperatures are about 3.8 K for (100) and 3.6 K for (111) orientations, slightly lower than that of the bulk. Magneto-resistive measurements indicate that these thin films may have upper critical fields higher than that of the bulk.more » With large surface-to-bulk ratio, superconducting indium doped SnTe thin films provide a rich platform for the study of topological superconductivity and potential device applications based on topological superconductors.« less

  13. Role of polycrystallinity in CdTe and CuInSe sub 2 photovoltaic cells

    SciTech Connect

    Sites, J.R. )

    1991-01-01

    The polycrystalline nature of thin-film CdTe and CuInSe{sub 2} solar cells continues to be a major factor in several individual losses that limit overall cell efficiency. This report describes progress in the quantitative separation of these losses, including both measurement and analysis procedures. It also applies these techniques to several individual cells to help document the overall progress with CdTe and CuInSe{sub 2} cells. Notably, CdTe cells from Photon Energy have reduced window photocurrent losses to 1 mA/Cm{sup 2}; those from the University of South Florida have achieved a maximum power voltage of 693 mV; and CuInSe{sub 2} cells from International Solar Electric Technology have shown a hole density as high as 7 {times} 10{sup 16} cm{sup {minus}3}, implying a significant reduction in compensation. 9 refs.

  14. Ba2TeO: A new layered oxytelluride

    SciTech Connect

    Besara, T.; Ramirez, D.; Sun, J.; Whalen, J. B.; Tokumoto, T. D.; McGill, S. A.; Singh, D. J.; Siegrist, T.

    2015-02-01

    For single crystals of the new semiconducting oxytelluride phase, Ba2TeO, we synthesized from barium oxide powder and elemental tellurium in a molten barium metal flux. Ba2TeO crystallizes in tetragonal symmetry with space group P4/nmm (#129), a=5.0337(1) Å, c=9.9437(4) Å, Z=2. The crystals were characterized by single crystal x-ray diffraction, heat capacity and optical measurements. Moreover, the optical measurements along with electronic band structure calculations indicate semiconductor behavior with a band gap of 2.93 eV. Resistivity measurements show that Ba2TeO is highly insulating.

  15. Simulation of Electric Field in Semi Insulating Au/CdTe/Au Detector under Flux

    SciTech Connect

    Franc, J.; James, R.; Grill, R.; Kubat, J.; Belas, E.; Hoschl, P.; Moravec, P.; Praus, P.

    2009-08-02

    We report our simulations on the profile of the electric field in semi insulating CdTe and CdZnTe with Au contacts under radiation flux. The type of the space charge and electric field distribution in the Au/CdTe/Au structure is at high fluxes result of a combined influence of charge formed due to band bending at the electrodes and from photo generated carriers, which are trapped at deep levels. Simultaneous solution of drift-diffusion and Poisson equations is used for the calculation. We show, that the space charge originating from trapped photo-carriers starts to dominate at fluxes 10{sup 15}-10{sup 16}cm{sup -2}s{sup -1}, when the influence of contacts starts to be negligible.

  16. Ba2TeO as an optoelectronic material: First-principles study

    DOE PAGES [OSTI]

    Sun, Jifeng; Shi, Hongliang; Du, Mao-Hua; Siegrist, Theo; Singh, David J.

    2015-05-21

    The band structure, optical and defects properties of Ba2TeO are systematically investigated using density functional theory with a view to understanding its potential as an optoelectronic or transparent conducting material. Ba2TeO crystallizes with tetragonal structure (space group P4/nmm) and with a 2.93 eV optical band gap1. We find relatively modest band masses for both electrons and holes suggesting applications. Optical properties show a infrared-red absorption when doped. This could potentially be useful for combining wavelength filtering and transparent conducting functions. Furthermore, our defect calculations show that Ba2TeO is intrinsically p-type conducting under Ba-poor condition. However, the spontaneous formation of themore » donor defects may constrain the p-type transport properties and would need to be addressed to enable applications.« less

  17. Thermoelectric properties of indium doped PbTe{sub 1-y}Se{sub y} alloys

    SciTech Connect

    Bali, Ashoka; Mallik, Ramesh Chandra; Wang, Heng; Snyder, G. Jeffrey

    2014-07-21

    Lead telluride and its alloys are well known for their thermoelectric applications. Here, a systematic study of PbTe{sub 1-y}Se{sub y} alloys doped with indium has been done. The powder X-Ray diffraction combined with Rietveld analysis confirmed the polycrystalline single phase nature of the samples, while microstructural analysis with scanning electron microscope results showed densification of samples and presence of micrometer sized particles. The temperature dependent transport properties showed that in these alloys, indium neither pinned the Fermi level as it does in PbTe, nor acted as a resonant dopant as in SnTe. At high temperatures, bipolar effect was observed which restricted the zT to 0.66 at 800 K for the sample with 30% Se content.

  18. Superconducting thin films of (100) and (111) oriented indium doped topological crystalline insulator SnTe

    SciTech Connect

    Si, W.; Zhang, C.; Wu, L.; Ozaki, T.; Gu, G.; Li, Q.

    2015-09-01

    Recent discovery of the topological crystalline insulator SnTe has triggered a search for topological superconductors, which have potential application to topological quantum computing. The present work reports on the superconducting properties of indium doped SnTe thin films. The (100) and (111) oriented thin films were epitaxially grown by pulsed-laser deposition on (100) and (111) BaF2 crystalline substrates respectively. The onset superconducting transition temperatures are about 3.8 K for (100) and 3.6 K for (111) orientations, slightly lower than that of the bulk. Magneto-resistive measurements indicate that these thin films may have upper critical fields higher than that of the bulk. With large surface-to-bulk ratio, superconducting indium doped SnTe thin films provide a rich platform for the study of topological superconductivity and potential device applications based on topological superconductors.

  19. Pair correlations in neutrinoless double {beta} decay candidate {sup 130}Te.

    SciTech Connect

    Bloxham, T.; Kay, B. P.; Schiffer, J. P.; Clark, J. A.; Deibel, C. M.; Freeman, S. J.; Freedman, S. J.; Howard, A. M.; McAllister, S. A.; Parker, P. D.; Sharp, D. K.; Thomas, J. S. (Physics); ( PSC-USR); (LBNL); (Michigan State Univ.); (Univ. of Manchester); (Yale Univ.)

    2010-08-16

    Pair correlations in the ground state of {sup 130}Te have been investigated using pair-transfer experiments to explore the validity of approximations in calculating the matrix element for neutrinoless double-{beta} decay. This nucleus is a candidate for the observation of such decay, and a good understanding of its structure is crucial for eventual calculations of the neutrino mass, should such a decay indeed be observed. For proton-pair adding, strong transitions to excited 0{sup +} states had been observed in the Te isotopes by Alford et al. [Nucl. Phys. A 323, 339 (1979)], indicating a breaking of the BCS approximation for protons in the ground state. We measured the neutron-pair removing (p,t) reaction on {sup 130}Te and found no indication of a corresponding splitting of the BCS nature of the ground state for neutrons.

  20. Pair correlations in the neutrinoless double-{beta} decay candidate {sup 130}Te

    SciTech Connect

    Bloxham, T.; Freedman, S. J. [Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Kay, B. P.; Schiffer, J. P.; Clark, J. A. [Physics Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Deibel, C. M. [Physics Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Joint Institute for Nuclear Astrophysics, Michigan State University, East Lansing, Michigan 48825 (United States); Freeman, S. J.; Howard, A. M.; McAllister, S. A.; Sharp, D. K.; Thomas, J. S. [Schuster Laboratory, University of Manchester, Manchester, M13 9PL (United Kingdom); Parker, P. D. [A. W. Wright Nuclear Structure Laboratory, Yale University, New Haven, Connecticut 06520 (United States)

    2010-08-15

    Pair correlations in the ground state of {sup 130}Te have been investigated using pair-transfer experiments to explore the validity of approximations in calculating the matrix element for neutrinoless double-{beta} decay. This nucleus is a candidate for the observation of such decay, and a good understanding of its structure is crucial for eventual calculations of the neutrino mass, should such a decay indeed be observed. For proton-pair adding, strong transitions to excited 0{sup +} states had been observed in the Te isotopes by Alford et al. [Nucl. Phys. A 323, 339 (1979)], indicating a breaking of the BCS approximation for protons in the ground state. We measured the neutron-pair removing (p,t) reaction on {sup 130}Te and found no indication of a corresponding splitting of the BCS nature of the ground state for neutrons.

  1. Breckinridge Project, initial effort. Report III, Volume 2. Specifications

    SciTech Connect

    1982-01-01

    Report III, Volume 2 contains those specifications numbered K through Y, as follows: Specifications for Compressors (K); Specifications for Piping (L); Specifications for Structures (M); Specifications for Insulation (N); Specifications for Electrical (P); Specifications for Concrete (Q); Specifications for Civil (S); Specifications for Welding (W); Specifications for Painting (X); and Specifications for Special (Y). The standard specifications of Bechtel Petroleum Incorporated have been amended as necessary to reflect the specific requirements of the Breckinridge Project and the more stringent specifications of Ashland Synthetic Fuels, Inc. These standard specifications are available for the Initial Effort (Phase Zero) work performed by all contractors and subcontractors.

  2. Universal bandgap bowing in group III nitride alloys

    SciTech Connect

    Wu, J.; Walukiewicz, W.; Yu, K.M.; Ager III, J.W.; Li, S.X.; Haller, E.E.; Lu, H.; Schaff, W.J.

    2002-08-06

    The energy gaps of MBE-grown wurtzite-structure In{sub 1-x}Al{sub x}N alloys with x {le} 0.25 have been measured by absorption and photoluminescence experiments. The results are consistent with the recent discovery of a narrow bandgap of {approx}0.8 eV for InN. A bowing parameter of 3 eV was determined from the composition dependence of these bandgaps. Combined with previously reported data of InGaN and AlGaN, these results show a universal relationship between the bandgap variations of group III nitride alloys and their compositions.

  3. Part III - List of Documents, Exhibits, and Other Attachments

    National Nuclear Security Administration (NNSA)

    Updated 9/30/15 to Mod 0588 Contract No. DE-AC04-94AL85000 Modification No. M202 Section J - Page 1 Part III - List of Documents, Exhibits, and Other Attachments Section J LIST OF ATTACHMENTS Document Appendix A - Personnel Appendix (Revised RAs 1-12 and Mods M0541, M0558) Appendix B - Statement of Work (Revised M244, M264) Appendix C - Special Bank Account Agreement (Revised M248, M271, M461, M497, M508) Appendix D - Key Personnel (Revised M216, M224, M227, M229, M233, M252, M257, M272, M275,

  4. I IIII1IiI II1Ii

    Office of Legacy Management (LM)

    * 'I I IIII1IiI II1Ii 1111 1111 I - I' p. r. * *: * * * .** I I ,e L 'I r - I OFFICIAL PHOTOGRAPH ADEC ?Date ______ Time - Location /oie_ / I C 4'.'-?- 1D& Reason for Photo ' 1 By _________ Ro1 # 7'93 Frame' # ,'9 I *.' ' .- - . *c *\ I '' . *. , * " . ... *l; .; . '' N 1 * ' ' * ' '" ), q . L *" ' r 'I . I ' , * I ", * _; . ':. -* - - ! .) f' '' . . * 'i; . ,- , . F) .* :-- .' *, 'I 1 - . '.. ' t; , çv ' . ,* I i * #' *. '3 "' i * '- *1 '4 *' ,:- - a 4 t ' - * ', %

  5. Technology transfer package on seismic base isolation - Volume III

    SciTech Connect

    1995-02-14

    This Technology Transfer Package provides some detailed information for the U.S. Department of Energy (DOE) and its contractors about seismic base isolation. Intended users of this three-volume package are DOE Design and Safety Engineers as well as DOE Facility Managers who are responsible for reducing the effects of natural phenomena hazards (NPH), specifically earthquakes, on their facilities. The package was developed as part of DOE's efforts to study and implement techniques for protecting lives and property from the effects of natural phenomena and to support the International Decade for Natural Disaster Reduction. Volume III contains supporting materials not included in Volumes I and II.

  6. Section III, Division 5 - Development And Future Directions

    SciTech Connect

    Morton, Dana K.; Jetter, Robert I; Nestell, James E.; Burchell, Timothy D; Sham, Sam

    2012-01-01

    This paper provides commentary on a new division under Section III of the ASME Boiler and Pressure Vessel (BPV) Code. This new Division 5 has an issuance date of November 1, 2011 and is part of the 2011 Addenda to the 2010 Edition of the BPV Code. The new Division covers the rules for the design, fabrication, inspection and testing of components for high temperature nuclear reactors. Information is provided on the scope and need for Division 5, the structure of Division 5, where the rules originated, the various changes made in finalizing Division 5, and the future near-term and long-term expectations for Division 5 development.

  7. CRC handbook of nuclear reactors calculations. Vol. III

    SciTech Connect

    Ronen, Y.

    1986-01-01

    This handbook breaks down the complex field of nuclear reactor calculations into major steps. Each step presents a detailed analysis of the problems to be solved, the parameters involved, and the elaborate computer programs developed to perform the calculations. This book bridges the gap between nuclear reactor theory and the implementation of that theory, including the problems to be encountered and the level of confidence that should be given to the methods described. Volume III: Control Rods and Burnable Absorber Calculations. Perturbation Theory for Nuclear Reactor Analysis. Thermal Reactors Calculations. Fast Reactor Calculations. Seed-Blanket Reactors. Index.

  8. Table III: Technical Targets for Catalyst Coated Membranes (CCMs): Stationary

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    III: Technical Targets for Catalyst Coated Membranes (CCMs): Stationary All targets must be achieved simultaneously Characteristics Units Calendar year 2002 status a 2005 2010 Membrane Areal Resistance in cell, operating temperature Ω-cm 2 0.1 0.1 0.1 Cost b $/kW --TBD 250 100 Operating Temperature o C 160 120-160 c 140-180 Durability Hours 5000 >15000 >40000 Survivability o C -20 -30 -40 Catalyst loading mg/cm 2 2 1 0.25 Performance (0.7 V) --EOL A/cm 2 0.15 0.25 0.35 G/kW for loading

  9. Polyamide preparation with pentaamine cobalt (III) complex catalyst

    SciTech Connect

    Wu, M.Y.M.; Ball, L.E.; Coffey, G.P.

    1987-11-17

    A process is described for preparing a polyamide containing amide groups as integral parts of the main polymer chain comprising polymerizing a polyamide forming system, chosen from (1) an alpha, beta-unsaturated carboxylic acid and ammonia, (2) an ammonium salt of an alpha, beta unsaturated carboxylic acid, (3) an alpha, beta-unsaturated nitrile and water, (4) an alpha, beta-unsaturated amine and ammonia, (5) or a beta-amino propionic acid or its alkyl derivatives, in contact with a catalyst comprising a pentaamine cobalt (III) complex.

  10. Thermoelectric study of crossroads material MnTe via sulfur doping

    SciTech Connect

    Xie, Wenjie Populoh, Sascha; Sagarna, Leyre; Trottmann, Matthias; Ga??zka, Krzysztof; Xiao, Xingxing; Liu, Yufei; He, Jian; Weidenkaff, Anke

    2014-03-14

    Here, we report thermoelectric study of crossroads material MnTe via iso-electronic doping S on the Te-site. MnTe{sub 1-x}S{sub x} samples with nominal S content of x?=?0.00, 0.05, and 0.10 were prepared using a melt-quench method followed by pulverization and spark plasma sintering. The X-ray powder diffraction, scanning electron microscopy, and ZAF-corrected compositional analysis confirmed that S uniformly substitutes Te up to slightly over 2%. A higher content of S in the starting materials led to the formation of secondary phases. The thermoelectric properties of MnTe{sub 1-x}S{sub x} samples were characterized by means of Seebeck coefficient, electrical conductivity, and thermal conductivity measurements from 300?K to 773?K. Furthermore, Hall coefficient measurements and a single parabolic band model were used to help gain insights on the effects of S-doping on the scattering mechanism and the carrier effective mass. As expected, S doping not only introduced hole charge carriers but also created short-range defects that effectively scatter heat-carrying phonons at elevated temperatures. On the other hand, we found that S doping degraded the effective mass. As a result, the ZT of MnTe{sub 0.9}S{sub 0.1} was substantially enhanced over the pristine sample near 400?K, while the improvement of ZT became marginal at elevated temperatures. A ZT???0.65 at 773?K was obtained in all three samples.

  11. Synthesis, crystal and electronic structure, and physical properties of the new lanthanum copper telluride La{sub 3}Cu{sub 5}Te{sub 7}

    SciTech Connect

    Zelinska, Mariya; Assoud, Abdeljalil [Department of Chemistry, University of Waterloo, Waterloo, ON, Canada N2L 3G1 (Canada); Kleinke, Holger, E-mail: kleinke@uwaterloo.c [Department of Chemistry, University of Waterloo, Waterloo, ON, Canada N2L 3G1 (Canada)

    2011-03-15

    The new lanthanum copper telluride La{sub 3}Cu{sub 5-x}Te{sub 7} has been obtained by annealing the elements at 1073 K. Single-crystal X-ray diffraction studies revealed that the title compound crystallizes in a new structure type, space group Pnma (no. 62) with lattice dimensions of a=8.2326(3) A, b=25.9466(9) A, c=7.3402(3) A, V=1567.9(1) A{sup 3}, Z=4 for La{sub 3}Cu{sub 4.86(4)}Te{sub 7}. The structure of La{sub 3}Cu{sub 5-x}Te{sub 7} is remarkably complex. The Cu and Te atoms build up a three-dimensional covalent network. The coordination polyhedra include trigonal LaTe{sub 6} prisms, capped trigonal LaTe{sub 7} prisms, CuTe{sub 4} tetrahedra, and CuTe{sub 3} pyramids. All Cu sites exhibit deficiencies of various extents. Electrical property measurements on a sintered pellet of La{sub 3}Cu{sub 4.86}Te{sub 7} indicate that it is a p-type semiconductor in accordance with the electronic structure calculations. -- Graphical abstract: Oligomeric unit comprising interconnected CuTe{sub 3} pyramids and CuTe{sub 4} tetrahedra. Display Omitted Research highlights: {yields} La{sub 3}Cu{sub 5-x}Te{sub 7} adopts a new structure type. {yields} All Cu sites exhibit deficiencies of various extents. {yields} The coordination polyhedra include trigonal LaTe{sub 6} prisms, capped trigonal LaTe{sub 7} prisms, CuTe{sub 4} tetrahedra and CuTe{sub 3} pyramids. {yields} La{sub 3}Cu{sub 5-x}Te{sub 7} is a p-type semiconductor.

  12. Multiband Te p Based Superconductivity of Ta4Pd3Te16

    SciTech Connect

    Singh, David J.

    2014-10-06

    We recently discovered that Ta4Pd3Te16 is a superconductor that has been suggested to be an unconventional superconductor near magnetism. Here, we report electronic structure calculations showing that despite the layered crystal structure the material is an anisotropic three-dimensional (3D) metal. The Fermi surface contains prominent one-dimensional (1D) and two-dimensional (2D) features, including nested 1D sheets, a 2D cylindrical section, and a 3D sheet. Moreover, the electronic states that make up the Fermi surface are mostly derived from Te p states with small Ta d and Pd d contributions. This places the compound far from magnetic instabilities. The results are discussed in terms of multiband superconductivity.

  13. Renaissance of the ~1 TeV Fixed-Target Program

    SciTech Connect

    Adams, T.; Appel, Jeffrey A.; Arms, Kregg Elliott; Balantekin, A.B.; Conrad, Janet Marie; Cooper, Peter S.; Djurcic, Zelimir; Dunwoodie, William M.; Engelfried, Jurgen; Fisher, Peter H.; Gottschalk, E.; /Fermilab /Northwestern U.

    2009-05-01

    This document describes the physics potential of a new fixed-target program based on a {approx} TeV proton source. Two proton sources are potentially available in the future: the existing Tevatron at Fermilab, which can provide 800 GeV protons for fixed-target physics, and a possible upgrade to the SPS at CERN, called SPS+, which would produce 1 TeV protons on target. In this paper we use an example Tevatron fixed-target program to illustrate the high discovery potential possible in the charm and neutrino sectors. We highlight examples which are either unique to the program or difficult to accomplish at other venues.

  14. Renaissance of the ~ 1-TeV Fixed-Target Program

    SciTech Connect

    Adams, T.; Appel, J.A.; Arms, K.E.; Balantekin, A.B.; Conrad, J.M.; Cooper, P.S.; Djurcic, Z.; Dunwoodie, W.; Engelfried, J.; Fisher, P.H.; Gottschalk, Erik Edward; de Gouvea, A.; Heller, K.; Ignarra, C.M.; Karagiorgi, G.; Kwan, S.; Loinaz, W.A.; Meadows, B.; Moore, R.; Morfin, J.G.; Naples, D.; /Pittsburgh U. /St. Mary's Coll., Minnesota /New Mexico State U. /Michigan U. /Wayne State U. /South Carolina U. /Florida U. /Carnegie Mellon U. /Cincinnati U. /Columbia U. /Columbia U. /Northwestern U. /Yale U. /Fermilab /Argonne /Northwestern U. /APC, Paris

    2011-12-02

    This document describes the physics potential of a new fixed-target program based on a {approx}1 TeV proton source. Two proton sources are potentially available in the future: the existing Tevatron at Fermilab, which can provide 800 GeV protons for fixed-target physics, and a possible upgrade to the SPS at CERN, called SPS+, which would produce 1 TeV protons on target. In this paper we use an example Tevatron fixed-target program to illustrate the high discovery potential possible in the charm and neutrino sectors. We highlight examples which are either unique to the program or difficult to accomplish at other venues.

  15. Optical Observations of Gamma-Ray Bursts: Connections to GeV/TeV Jets

    Office of Scientific and Technical Information (OSTI)

    (Conference) | SciTech Connect Conference: Optical Observations of Gamma-Ray Bursts: Connections to GeV/TeV Jets Citation Details In-Document Search Title: Optical Observations of Gamma-Ray Bursts: Connections to GeV/TeV Jets Authors: Vestrand, W. Thomas [1] + Show Author Affiliations Los Alamos National Laboratory Publication Date: 2013-08-21 OSTI Identifier: 1091318 Report Number(s): LA-UR-13-26624 DOE Contract Number: AC52-06NA25396 Resource Type: Conference Resource Relation: Conference:

  16. Preliminary design for a 20 TeV Collider in a deep tunnel at Fermilab

    SciTech Connect

    Not Available

    1985-01-12

    The Reference Design Study for a 20 TeV Collider demonstrated the technical and cost feasibility of a 20 TeV superconducting collider facility. Based on magnets of 3T, 5T, and 6.5T the Main Ring of the Collider would have a circumference of 164 km, 113 km, or 90 km. There would be six collision regions, of which four would be developed intially. The 5T and 6.5T rings would have twelve major refrigeration stations, while the 3T design would have 24 major refrigeration stations.

  17. Graphene/CdTe heterostructure solar cell and its enhancement with photo-induced doping

    SciTech Connect

    Lin, Shisheng Chen, Hongsheng; Li, Xiaoqiang; Zhang, Shengjiao; Wang, Peng; Xu, Zhijuan; Zhong, Huikai; Wu, Zhiqian

    2015-11-09

    We report a type of solar cell based on graphene/CdTe Schottky heterostructure, which can be improved by surface engineering as graphene is atomic thin. By coating a layer of ultrathin CdSe quantum dots onto graphene/CdTe heterostructure, the power conversion efficiency is increased from 2.08% to 3.10%. Photo-induced doping is mainly accounted for this enhancement, as evidenced by field effect transport, Raman, photoluminescence, and quantum efficiency measurements. This work demonstrates a feasible way of improving the performance of graphene/semiconductor heterostructure solar cells by combining one dimensional with two dimensional materials.

  18. .sup.123m Te-Labeled biochemicals and method of preparation

    DOEpatents

    Knapp, Jr., Furn F.

    1980-01-01

    A novel class of .sup.123m Te-labeled steroids and amino acids is provided by the method of reacting a .sup.123m Te symmetric diorgano ditelluride with a hydride reducing agent and a source of alkali metal ions to form an alkali metal organo telluride. The alkali metal organo telluride is reacted with a primary halogenated steroidal side chain, amino acid, or amino acid precursor such as hydantoin. The novel compounds are useful as biological tracers and as organal imaging agents.

  19. High efficiency thin film CdTe and a-Si based solar cells

    SciTech Connect

    Compaan, A. D.; Deng, X.; Bohn, R. G.

    2000-01-04

    This report describes work done by the University of Toledo during the first year of this subcontract. During this time, the CdTe group constructed a second dual magnetron sputter deposition facility; optimized reactive sputtering for ZnTe:N films to achieve 10 ohm-cm resistivity and {approximately}9% efficiency cells with a copper-free ZnTe:N/Ni contact; identified Cu-related photoluminescence features and studied their correlation with cell performance including their dependence on temperature and E-fields; studied band-tail absorption in CdS{sub x}Te{sub 1{minus}x} films at 10 K and 300 K; collaborated with the National CdTe PV Team on (1) studies of high-resistivity tin oxide (HRT) layers from ITN Energy Systems, (2) fabrication of cells on the HRT layers with 0, 300, and 800-nm CdS, and (3) preparation of ZnTe:N-based contacts on First Solar materials for stress testing; and collaborated with Brooklyn College for ellipsometry studies of CdS{sub x}Te{sub 1{minus}x} alloy films, and with the University of Buffalo/Brookhaven NSLS for synchrotron X-ray fluorescence studies of interdiffusion in CdS/CdTe bilayers. The a-Si group established a baseline for fabricating a-Si-based solar cells with single, tandem, and triple-junction structures; fabricated a-Si/a-SiGe/a-SiGe triple-junction solar cells with an initial efficiency of 9.7% during the second quarter, and 10.6% during the fourth quarter (after 1166 hours of light-soaking under 1-sun light intensity at 50 C, the 10.6% solar cells stabilized at about 9%); fabricated wide-bandgap a-Si top cells, the highest Voc achieved for the single-junction top cell was 1.02 V, and top cells with high FF (up to 74%) were fabricated routinely; fabricated high-quality narrow-bandgap a-SiGe solar cells with 8.3% efficiency; found that bandgap-graded buffer layers improve the performance (Voc and FF) of the narrow-bandgap a-SiGe bottom cells; and found that a small amount of oxygen partial pressure ({approximately}2 {times} 10

  20. Passivation of an isoelectronic impurity by atomic hydrogen: The case of ZnTe:O

    SciTech Connect

    Felici, Marco; Polimeni, Antonio; Capizzi, Mario; Nabetani, Y.; Okuno, T.; Aoki, K.; Kato, T.; Matsumoto, T.; Hirai, T.

    2006-03-06

    We investigated the optical properties of ZnTe:O/GaAs before and after atomic hydrogen irradiation. Oxygen incorporation gives rise to energy levels associated with single O atoms, O-O pairs, and O clusters, and to a blueshift of the energy gap of the material with respect to that of pure ZnTe/GaAs. All of these effects disappear progressively after irradiation with H, which also leads to an increase in the tensile strain of the epilayer. These observations provide experimental evidence of H-induced passivation of an isoelectronic impurity in II-VI alloys.

  1. Charge transport properties of p-CdTe/n-CdTe/n{sup +}-Si diode-type nuclear radiation detectors based on metalorganic vapor-phase epitaxy-grown epilayers

    SciTech Connect

    Niraula, M.; Yasuda, K.; Wajima, Y.; Yamashita, H.; Tsukamoto, Y.; Suzuki, Y.; Matsumoto, M.; Takai, N.; Tsukamoto, Y.; Agata, Y.

    2013-10-28

    Charge transport properties of p-CdTe/n-CdTe/n{sup +}-Si diode-type nuclear radiation detectors, fabricated by growing p-and n-type CdTe epilayers on (211) n{sup +}-Si substrates using metalorganic vapor-phase epitaxy (MOVPE), were studied by analyzing current-voltage characteristics measured at various temperatures. The diode fabricated shows good rectification properties, however, both forward and reverse biased currents deviate from their ideal behavior. The forward current exhibits typical feature of multi-step tunneling at lower biases; however, becomes space charge limited type when the bias is increased. On the other hand, the reverse current exhibits thermally activated tunneling-type current. It was found that trapping centers at the p-CdTe/n-CdTe junction, which were formed due to the growth induced defects, determine the currents of this diode, and hence limit the performance of the nuclear radiation detectors developed.

  2. Study of W boson production in pPb collisions at sNN=5.02 TeV...

    Office of Scientific and Technical Information (OSTI)

    Study of W boson production in pPb collisions at sNN5.02 TeV Citation Details In-Document Search Title: Study of W boson production in pPb collisions at sNN5.02 TeV Publication...

  3. Cadmium sulfate and CdTe-quantum dots alter DNA repair in zebrafish (Danio rerio) liver cells

    SciTech Connect

    Tang, Song; Cai, Qingsong; Chibli, Hicham; Allagadda, Vinay; Nadeau, Jay L.; Mayer, Gregory D.

    2013-10-15

    Increasing use of quantum dots (QDs) makes it necessary to evaluate their toxicological impacts on aquatic organisms, since their contamination of surface water is inevitable. This study compares the genotoxic effects of ionic Cd versus CdTe nanocrystals in zebrafish hepatocytes. After 24 h of CdSO{sub 4} or CdTe QD exposure, zebrafish liver (ZFL) cells showed a decreased number of viable cells, an accumulation of Cd, an increased formation of reactive oxygen species (ROS), and an induction of DNA strand breaks. Measured levels of stress defense and DNA repair genes were elevated in both cases. However, removal of bulky DNA adducts by nucleotide excision repair (NER) was inhibited with CdSO{sub 4} but not with CdTe QDs. The adverse effects caused by acute exposure of CdTe QDs might be mediated through differing mechanisms than those resulting from ionic cadmium toxicity, and studying the effects of metallic components may be not enough to explain QD toxicities in aquatic organisms. - Highlights: • Both CdSO{sub 4} and CdTe QDs lead to cell death and Cd accumulation. • Both CdSO{sub 4} and CdTe QDs induce cellular ROS generation and DNA strand breaks. • Both CdSO{sub 4} and CdTe QDs induce the expressions of stress defense and DNA repair genes. • NER repair capacity was inhibited with CdSO{sub 4} but not with CdTe QDs.

  4. Sonochemical and hydrothermal synthesis of PbTe nanostructures with the aid of a novel capping agent

    SciTech Connect

    Fard-Fini, Shahla Ahmadian; Salavati-Niasari, Masoud; Mohandes, Fatemeh

    2013-10-15

    Graphical abstract: - Highlights: • PbTe nanostructures were prepared with the aid of Schiff-base compound. • Sonochemical and hydrothermal methods were employed to fabricate PbTe nanostrucrues. • The effect of preparation parameters on the morphology of PbTe was investigated. - Abstract: In this work, a new Schiff-base compound derived from 1,8-diamino-3,6-dioxaoctane and 2-hydroxy-1-naphthaldehyde marked as (2-HyNa)-(DaDo) was synthesized, characterized, and then used as capping agent for the preparation of PbTe nanostructures. To fabricate PbTe nanostructures, two different synthesis methods; hydrothermal and sonochemical routes, were applied. To further investigate, the effect of preparation parameters like reaction time and temperature in hydrothermal synthesis and sonication time in the presence of ultrasound irradiation on the morphology and purity of the final products was tested. The products were analyzed with the aid of SEM, TEM, XRD, FT-IR, and EDS. Based on the obtained results, it was found that pure cubic phased PbTe nanostructures have been obtained by hydrothermal and sonochemical approaches. Besides, SEM images showed that cubic-like and rod-like PbTe nanostructures have been formed by hydrothermal and sonochemical methods, respectively. Sonochemical synthesis of PbTe nanostructures was favorable, because the synthesis time of sonochemical method was shorter than that of hydrothermal method.

  5. Local-moment magnetism in superconducting FeTe0.35Se0.65 as seen...

    Office of Scientific and Technical Information (OSTI)

    Local-moment magnetism in superconducting FeTe0.35Se0.65 as seen via inelastic neutron scattering Prev Next Title: Local-moment magnetism in superconducting FeTe0.35Se0.65 as ...

  6. An alternate compliance strategy for Title III regulations

    SciTech Connect

    Brothers, H.S.

    1996-12-31

    The EPA is attempting to incorporate pollution prevention into the Title III regulations and an example of their efforts is evident in the Hazardous Organic NESHAP (HON) rule. The HON rule includes provisions that partially encourage pollution prevention, but compliance for most facilities relies on implementation of reference control technologies (RCT). This paper proposes an Alternative Control Strategy (ACS) for the HON rule that incorporates pollution prevention and flexibility, while encouraging innovative technology. The ACS is defined by converting existing language in the HON rule into a performance based standard permitting regulated facilities to design compliance programs to meet the required hazardous air pollutant (HAP) emission reduction. The ACS meets all emission reduction and other requirements of the HON rule. The ACS was applied to an example facility and assessed using three evaluation methods. The ACS program reduced risk to the local community to a greater extent than the comparable RCT compliance program at a comparable total cost. The ACS concept is applicable to similar Title III and many other regulations, and provides a major step in the progression of moving regulations from the traditional end-of-pipe treatment philosophy to pollution prevention performance based standards. 5 refs., 3 tabs.

  7. Carbon doping of III-V compound semiconductors

    SciTech Connect

    Moll, A.J.

    1994-09-01

    Focus of the study is C acceptor doping of GaAs, since C diffusion coefficient is at least one order of magnitude lower than that of other common p-type dopants in GaAs. C ion implantation results in a concentration of free holes in the valence band < 10% of that of the implanted C atoms for doses > 10{sup 14}/cm{sup 2}. Rutherford backscattering, electrical measurements, Raman spectroscopy, and Fourier transform infrared spectroscopy were amonth the techniques used. Ga co-implantation increased the C activation in two steps: first, the additional radiation damage creates vacant As sites that the implanted C can occupy, and second, it maintains the stoichiometry of the implanted layer, reducing the number of compensating native defects. In InP, the behavior of C was different from that in GaAs. C acts as n-type dopant in the In site; however, its incorporation by implantation was difficult to control; experiments using P co-implants were inconsistent. The lattice position of inactive C in GaAs in implanted and epitaxial layers is discussed; evidence for formation of C precipitates in GaAs and InP was found. Correlation of the results with literature on C doping in III-V semiconductors led to a phenomenological description of C in III-V compounds (particularly GaAs): The behavior of C is controlled by the chemical nature of C and the instrinsic Fermi level stabilization energy of the material.

  8. The High Energy Materials Science Beamline (HEMS) at PETRA III

    SciTech Connect

    Schell, Norbert; King, Andrew; Beckmann, Felix; Ruhnau, Hans-Ulrich; Kirchhof, Rene; Kiehn, Ruediger; Mueller, Martin; Schreyer, Andreas

    2010-06-23

    The HEMS Beamline at the German high-brilliance synchrotron radiation storage ring PETRA III is fully tunable between 30 and 250 keV and optimized for sub-micrometer focusing. Approximately 70 % of the beamtime will be dedicated to Materials Research. Fundamental research will encompass metallurgy, physics and chemistry with first experiments planned for the investigation of the relationship between macroscopic and micro-structural properties of polycrystalline materials, grain-grain-interactions, and the development of smart materials or processes. For this purpose a 3D-microsctructure-mapper has been designed. Applied research for manufacturing process optimization will benefit from high flux in combination with ultra-fast detector systems allowing complex and highly dynamic in-situ studies of micro-structural transformations, e.g. during welding processes. The beamline infrastructure allows accommodation of large and heavy user provided equipment. Experiments targeting the industrial user community will be based on well established techniques with standardized evaluation, allowing full service measurements, e.g. for tomography and texture determination. The beamline consists of a five meter in-vacuum undulator, a general optics hutch, an in-house test facility and three independent experimental hutches working alternately, plus additional set-up and storage space for long-term experiments. HEMS is under commissioning as one of the first beamlines running at PETRA III.

  9. Thermal conductivity of III-V semiconductor superlattices

    SciTech Connect

    Mei, S. Knezevic, I.

    2015-11-07

    This paper presents a semiclassical model for the anisotropic thermal transport in III-V semiconductor superlattices (SLs). An effective interface rms roughness is the only adjustable parameter. Thermal transport inside a layer is described by the Boltzmann transport equation in the relaxation time approximation and is affected by the relevant scattering mechanisms (three-phonon, mass-difference, and dopant and electron scattering of phonons), as well as by diffuse scattering from the interfaces captured via an effective interface scattering rate. The in-plane thermal conductivity is obtained from the layer conductivities connected in parallel. The cross-plane thermal conductivity is calculated from the layer thermal conductivities in series with one another and with thermal boundary resistances (TBRs) associated with each interface; the TBRs dominate cross-plane transport. The TBR of each interface is calculated from the transmission coefficient obtained by interpolating between the acoustic mismatch model (AMM) and the diffuse mismatch model (DMM), where the weight of the AMM transmission coefficient is the same wavelength-dependent specularity parameter related to the effective interface rms roughness that is commonly used to describe diffuse interface scattering. The model is applied to multiple III-arsenide superlattices, and the results are in very good agreement with experimental findings. The method is both simple and accurate, easy to implement, and applicable to complicated SL systems, such as the active regions of quantum cascade lasers. It is also valid for other SL material systems with high-quality interfaces and predominantly incoherent phonon transport.

  10. Wave-wave interactions in solar type III radio bursts

    SciTech Connect

    Thejappa, G.; MacDowall, R. J.

    2014-02-11

    The high time resolution observations from the STEREO/WAVES experiment show that in type III radio bursts, the Langmuir waves often occur as localized magnetic field aligned coherent wave packets with durations of a few ms and with peak intensities well exceeding the strong turbulence thresholds. Some of these wave packets show spectral signatures of beam-resonant Langmuir waves, down- and up-shifted sidebands, and ion sound waves, with frequencies, wave numbers, and tricoherences satisfying the resonance conditions of the oscillating two stream instability (four wave interaction). The spectra of a few of these wave packets also contain peaks at f{sub pe}, 2f{sub pe} and 3 f{sub pe} (f{sub pe} is the electron plasma frequency), with frequencies, wave numbers and bicoherences (computed using the wavelet based bispectral analysis techniques) satisfying the resonance conditions of three wave interactions: (1) excitation of second harmonic electromagnetic waves as a result of coalescence of two oppositely propagating Langmuir waves, and (2) excitation of third harmonic electromagnetic waves as a result of coalescence of Langmuir waves with second harmonic electromagnetic waves. The implication of these findings is that the strong turbulence processes play major roles in beam stabilization as well as conversion of Langmuir waves into escaping radiation in type III radio bursts.

  11. Modification of electron states in CdTe absorber due to a buffer layer in CdTe/CdS solar cells

    SciTech Connect

    Fedorenko, Y. G. Major, J. D.; Pressman, A.; Phillips, L. J.; Durose, K.

    2015-10-28

    By application of the ac admittance spectroscopy method, the defect state energy distributions were determined in CdTe incorporated in thin film solar cell structures concluded on ZnO, ZnSe, and ZnS buffer layers. Together with the Mott-Schottky analysis, the results revealed a strong modification of the defect density of states and the concentration of the uncompensated acceptors as influenced by the choice of the buffer layer. In the solar cells formed on ZnSe and ZnS, the Fermi level and the energy position of the dominant deep trap levels were observed to shift closer to the midgap of CdTe, suggesting the mid-gap states may act as recombination centers and impact the open-circuit voltage and the fill factor of the solar cells. For the deeper states, the broadening parameter was observed to increase, indicating fluctuations of the charge on a microscopic scale. Such changes can be attributed to the grain-boundary strain and the modification of the charge trapped at the grain-boundary interface states in polycrystalline CdTe.

  12. Effect of hydrostatic pressure and uniaxial strain on the electronic structure of Pb1-xSnxTe

    DOE PAGES [OSTI]

    Geilhufe, Matthias; Nayak, Sanjeev K.; Thomas, Stefan; Dane, Markus; Tripathi, Gouri S.; Entel, Peter; Hergert, Wolfram; Ernst, Arthur

    2015-12-09

    The electronic structure of Pb1–xSnxTe is studied by using the relativistic Korringa-Kohn-Rostoker Green function method in the framework of density functional theory. For all concentrations x, Pb1–xSnxTe is a direct semiconductor with a narrow band gap. In contrast to pure lead telluride, tin telluride shows an inverted band characteristic close to the Fermi energy. It will be shown that this particular property can be tuned, first, by alloying PbTe and SnTe and, second, by applying hydrostatic pressure or uniaxial strain. Furthermore, the magnitude of strain needed to switch between the regular and inverted band gap can be tuned by themore » alloy composition. In conclusion, there is a range of potential usage of Pb1–xSnxTe for spintronic applications.« less

  13. Synthesis, characterisation and thermoelectric properties of the oxytelluride Bi{sub 2}O{sub 2}Te

    SciTech Connect

    Luu, Son D.N.; Vaqueiro, Paz

    2015-03-15

    Bi{sub 2}O{sub 2}Te was synthesised from a stoichiometric mixture of Bi, Bi{sub 2}O{sub 3} and Te by a solid state reaction. Analysis of powder X-ray diffraction data indicates that this material crystallises in the anti-ThCr{sub 2}Si{sub 2} structure type (space group I4/mmm), with lattice parameters a=3.98025(4) and c=12.70391(16) Å. The electrical and thermal transport properties of Bi{sub 2}O{sub 2}Te were investigated as a function of temperature over the temperature range 300≤T (K)≤665. These measurements indicate that Bi{sub 2}O{sub 2}Te is an n-type semiconductor, with a band gap of 0.23 eV. The thermal conductivity of Bi{sub 2}O{sub 2}Te is remarkably low for a crystalline material, with a value of only 0.91 W m{sup −1} K{sup −1} at room temperature. - Graphical abstract: Bi{sub 2}O{sub 2}Te, which crystallises in the anti-ThCr{sub 2}Si{sub 2} structure type, is an n-type semiconductor with a remarkably low thermal conductivity. - Highlights: • Bi{sub 2}O{sub 2}Te crystallises in the anti-ThCr{sub 2}Si{sub 2} structure type. • Bi{sub 2}O{sub 2}Te is an n-type semiconductor, with a band gap of 0.23 eV. • The thermal conductivity of Bi{sub 2}O{sub 2}Te approaches values found for amorphous solids. • The thermoelectric figure of merit of undoped Bi{sub 2}O{sub 2}Te reaches 0.13 at 573 K.

  14. Theoretical Prediction of Am(III)/Eu(III) Selectivity to Aid the Design of Actinide-Lanthanide Separation Agents

    DOE PAGES [OSTI]

    Bryantsev, Vyacheslav S.; Hay, Benjamin P.

    2015-03-20

    Selective extraction of minor actinides from lanthanides is a critical step in the reduction of radiotoxicity of spent nuclear fuels. However, the design of suitable ligands for separating chemically similar 4f- and 5f-block trivalent metal ions poses a significant challenge. Furthermore, first-principles calculations should play an important role in the design of new separation agents, but their ability to predict metal ion selectivity has not been systematically evaluated. We examine the ability of several density functional theory methods to predict selectivity of Am(III) and Eu(III) with oxygen, mixed oxygen–nitrogen, and sulfur donor ligands. The results establish a computational method capablemore » of predicting the correct order of selectivities obtained from liquid–liquid extraction and aqueous phase complexation studies. To allow reasonably accurate predictions, it was critical to employ sufficiently flexible basis sets and provide proper account of solvation effects. The approach is utilized to estimate the selectivity of novel amide-functionalized diazine and 1,2,3-triazole ligands.« less

  15. Electrochemistry in neutral ambient-temperature ionic liquids. 1. Studies of iron (III), neodymium (III), and lithium(I)

    SciTech Connect

    Osteryoung, R.A.

    1985-01-01

    An ambient-temperature neutral ionic liquid composed of aluminum chloride and either N-1-butylpyridinium or 1-methyl-3-ethylimidazolium chloride, BuPyCl or ImCl, respectively, was employed in studies that take advantage of their unusual properties. These include an extended electrochemical window, readily controlled additions of excess chloride (base) or aluminum chloride (acid), and the fact that the physical properties of the neutral melt do not change about the 1:1 mole ratio of AlCl/sub 3/ to RCl. Li/sup +/ was found to be reducible in the neutral AlCl/sub 3/-ImCl melt, and its diffusion coefficient was found to be .00000086 sq cm/s. The stoichiometry of the complex formed between Nd(III) and Cl/sup +/ in the molten salt system was investigated by what is essentially an amperometric titration and was found to be NdC/sub 6/(3-). The structure of the Fe(III) chloro complex that exists in basic or acidic melts just slightly varying in composition from the neutral melt was also investigated; a constant value for the diffusion coefficient-viscosity product in both systems suggests no change in structure.

  16. Sloan Digital Sky Survey III (SDSS-III), Data Release 9, including the Baryon Oscillation Spectroscopic Survey (BOSS)

    DOE Data Explorer

    The Third Sloan Digital Sky Survey (SDSS-III) has issued Data Release 9 (DR9), the first public release of data from the Baryon Oscillation Spectroscopic Survey (BOSS). In this release BOSS, the largest of SDSS-IIIs four surveys, provides spectra for 535,995 newly observed galaxies, 102,100 quasars, and 116,474 stars, plus new information about objects in previous Sloan surveys (SDSS-I and II). Spectroscopy yields a wealth of information about astronomical objects including their motion (called redshift and written z), their composition, and sometimes also the density of the gas and other material that lies between them and observers on Earth. The new release lists spectra for galaxies with redshifts up to z = 0.8 (roughly 7 billion light years away) and quasars with redshifts between z = 2.1 and 3.5 (from 10 to 11.5 billion light years away). When BOSS is complete it will have measured 1.5 million galaxies and at least 150,000 quasars, as well as many thousands of stars and other ancillary objects for scientific projects other than BOSSs main goal. [extracts copied from LBL news release of August 8, 2012

  17. DE-SOL-0002555 WIPP Solicitation J-33 PART III - LIST OF DOCUMENTS, EXHIBITS AND OTHER ATTACHMENTS

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    3 PART III - LIST OF DOCUMENTS, EXHIBITS AND OTHER ATTACHMENTS SECTION J ATTACHMENT H: RESERVED

  18. Project Reports for Te-Moak Tribe of Western Shoshone: Battle Mountain Colony- 2012 Project

    Energy.gov [DOE]

    The Feasibility Study for the Battle Mountain Renewable Energy Park project ("Feasibility Study") will assess the feasibility, benefits, and impacts of a 5-megawatt (MW) solar photovoltaic (PV) generating system (the "Solar Project" or "Energy Park") on the Te-Moak Tribe of Western Shoshone Indians of Nevada Battle Mountain Colony in Battle Mountain, Nevada.

  19. Te-Moak Tribe of Western Shoshone: Battle Mountain Colony- 2012 Project

    Energy.gov [DOE]

    The Feasibility Study for the Battle Mountain Renewable Energy Park project ("Feasibility Study") will assess the feasibility, benefits, and impacts of a 5-megawatt (MW) solar photovoltaic (PV) generating system (the "Solar Project" or "Energy Park") on the Te-Moak Tribe of Western Shoshone Indians of Nevada Battle Mountain Colony in Battle Mountain, Nevada.

  20. Low-temperature photoluminescence analysis of CdTeSe crystals for radiation-detector applications

    SciTech Connect

    YANG G.; Roy, U. N.; Bolotnikov, A. E.; Cui, Y.; Camarda, G.S.; Hossain, A.; and James, R. B.

    2015-10-05

    Goal: Understanding the changes of material defects in CdTeSe following annealing. Experimental results and discussions: Infrared (IR) transmission microscopy; current-voltage measurements (Highlight: Improvement of resistivity of un-doped crystals after annealing); low-temperature photoluminescence (PL) spectrum of as-grown and annealed samples.

  1. Computational discovery of ferromagnetic semiconducting single-layer CrSnTe3

    DOE PAGES [OSTI]

    Zhuang, Houlong L.; Xie, Yu; Kent, P. R. C.; Ganesh, P.

    2015-07-06

    Despite many single-layer materials being reported in the past decade, few of them exhibit magnetism. Here we perform first-principles calculations using accurate hybrid density functional methods (HSE06) to predict that single-layer CrSnTe3 (CST) is a ferromagnetic semiconductor, with band gaps of 0.9 and 1.2 eV for the majority and minority spin channels, respectively. We determine the Curie temperature as 170 K, significantly higher than that of single-layer CrSiTe3 (90K) and CrGeTe3 (130 K). This is due to the enhanced ionicity of the Sn-Te bond, which in turn increases the superexchange coupling between the magnetic Cr atoms. We further explore themore » mechanical and dynamical stability and strain response of this single-layer material for possible epitaxial growth. Lastly, our study provides an intuitive approach to understand and design novel single-layer magnetic semiconductors for a wide range of spintronics and energy applications.« less

  2. Resonance photoelectron spectroscopy of TiX{sub 2} (X = S, Se, Te) titanium dichalcogenides

    SciTech Connect

    Shkvarin, A. S. Yarmoshenko, Yu. M.; Skorikov, N. A.; Yablonskikh, M. V.; Merentsov, A. I.; Shkvarina, E. G.; Titov, A. N.

    2012-11-15

    The photoelectron valence band spectra of TiS{sub 2}, TiSe{sub 2}, and TiTe{sub 2} dichalcogenides are investigated in the Ti 2p-3d resonance regime. Resonance bands in the vicinity of the Fermi energy are found for TiS{sub 2} and TiTe{sub 2}. The nature of these bands is analyzed based on model calculations of the density of electronic states in TiS{sub 2}, TiSe{sub 2}, and TiTe{sub 2} compounds intercalated by titanium atoms. Analysis of experimental data and their comparison with model calculations showed that these bands have different origins. It is found that the resonance enhancement of an additional band observed in TiS{sub 2} is explained by self-intercalation by titanium during the synthesis of this compound. The resonance enhancement in TiTe{sub 2} is caused by occupation of the 3d band in Ti.

  3. Strong spin-lattice coupling in CrSiTe3

    SciTech Connect

    Casto, L. D.; Clune, A. J.; Yokosuk, M. O.; Musfeldt, J. L.; Williams, T. J.; Zhuang, H. L.; Lin, M. -W.; Xiao, K.; Hennig, R. G.; Sales, B. C.; Yan, J. -Q.; Mandrus, D.

    2015-03-19

    CrSiTe3 has attracted recent interest as a candidate single-layer ferromagnetic semiconductor, but relatively little is known about the bulk properties of this material. Here, we report single-crystal X-ray diffraction, magnetic properties, thermal conductivity, vibrational, and optical spectroscopies and compare our findings with complementary electronic structure and lattice dynamics principles calculations. The high temperature paramagnetic phase is characterized by strong spin-lattice interactions that give rise to glassy behavior, negative thermal expansion, and an optical response that reveals that CrSiTe3 is an indirect gap semiconductor with indirect and direct band gaps at 0.4 and 1.2 eV, respectively. Measurements of the phonons across the 33 K ferromagnetic transition provide additional evidence for strong coupling between the magnetic and lattice degrees of freedom. In conclusion, the Si-Te stretching and Te displacement modes are sensitive to the magnetic ordering transition, a finding that we discuss in terms of the superexchange mechanism. Lastly, spin-lattice coupling constants are also extracted.

  4. Strong spin-lattice coupling in CrSiTe3

    DOE PAGES [OSTI]

    Casto, L. D.; Clune, A. J.; Yokosuk, M. O.; Musfeldt, J. L.; Williams, T. J.; Zhuang, H. L.; Lin, M. -W.; Xiao, K.; Hennig, R. G.; Sales, B. C.; et al

    2015-03-19

    CrSiTe3 has attracted recent interest as a candidate single-layer ferromagnetic semiconductor, but relatively little is known about the bulk properties of this material. Here, we report single-crystal X-ray diffraction, magnetic properties, thermal conductivity, vibrational, and optical spectroscopies and compare our findings with complementary electronic structure and lattice dynamics principles calculations. The high temperature paramagnetic phase is characterized by strong spin-lattice interactions that give rise to glassy behavior, negative thermal expansion, and an optical response that reveals that CrSiTe3 is an indirect gap semiconductor with indirect and direct band gaps at 0.4 and 1.2 eV, respectively. Measurements of the phonons acrossmore » the 33 K ferromagnetic transition provide additional evidence for strong coupling between the magnetic and lattice degrees of freedom. In conclusion, the Si-Te stretching and Te displacement modes are sensitive to the magnetic ordering transition, a finding that we discuss in terms of the superexchange mechanism. Lastly, spin-lattice coupling constants are also extracted.« less

  5. Rashba effect in single-layer antimony telluroiodide SbTeI

    DOE PAGES [OSTI]

    Zhuang, Houlong L.; Cooper, Valentino R.; Xu, Haixuan; Ganesh, P.; Hennig, Richard G.; Kent, P. R. C.

    2015-09-04

    Exploring spin-orbit coupling (SOC) in single-layer materials is important for potential spintronics applications. In this paper, using first-principles calculations, we show that single-layer antimony telluroiodide SbTeI behaves as a two-dimensional semiconductor exhibiting a G0W0 band gap of 1.82 eV. More importantly, we observe the Rashba spin splitting in the SOC band structure of single-layer SbTeI with a sizable Rashba coupling parameter of 1.39 eV Å, which is significantly larger than that of a number of two-dimensional systems including surfaces and interfaces. The low formation energy and real phonon modes of single-layer SbTeI imply that it is stable. Finally, our studymore » suggests that single-layer SbTeI is a candidate single-layer material for applications in spintronics devices.« less

  6. Comparison of Minority Carrier Lifetime Measurements in Superstrate and Substrate CdTe PV Devices: Preprint

    SciTech Connect

    Gessert, T. A.; Dhere, R. G.; Duenow, J. N.; Kuciauskas, D.; Kanevce, A.; Bergeson, J. D.

    2011-07-01

    We discuss typical and alternative procedures to analyze time-resolved photoluminescence (TRPL) measurements of minority carrier lifetime (MCL) with the hope of enhancing our understanding of how this technique may be used to better analyze CdTe photovoltaic (PV) device functionality. Historically, TRPL measurements of the fast recombination rate (t1) have provided insightful correlation with broad device functionality. However, we have more recently found that t1 does not correlate as well with smaller changes in device performance, nor does it correlate well with performance differences observed between superstrate and substrate CdTe PV devices. This study presents TRPL data for both superstrate and substrate CdTe devices where both t1 and the slower TRPL decay (t2) are analyzed. The study shows that changes in performance expected from small changes in device processing may correlate better with t2. Numerical modeling further suggests that, for devices that are expected to have similar drift field in the depletion region, effects of changes in bulk MCL and interface recombination should be more pronounced in t2. Although this technique may provide future guidance to improving CdS/CdTe device performance, it is often difficult to extract statistically precise values for t2, and therefore t2 data may demonstrate significant scatter when correlated with performance parameters.

  7. Investigation of deep level defects in CdTe thin films

    SciTech Connect

    Shankar, H.; Castaldini, A.; Dauksta, E.; Medvid, A.; Cavallini, A.

    2014-02-21

    In the past few years, a large body of work has been dedicated to CdTe thin film semiconductors, as the electronic and optical properties of CdTe nanostructures make them desirable for photovoltaic applications. The performance of semiconductor devices is greatly influenced by the deep levels. Knowledge of parameters of deep levels present in as-grown materials and the identification of their origin is the key factor in the development of photovoltaic device performance. Photo Induced Current Transient Spectroscopy technique (PICTS) has proven to be a very powerful method for the study of deep levels enabling us to identify the type of traps, their activation energy and apparent capture cross section. In the present work, we report the effect of growth parameters and LASER irradiation intensity on the photo-electric and transport properties of CdTe thin films prepared by Close-Space Sublimation method using SiC electrical heating element. CdTe thin films were grown at three different source temperatures (630, 650 and 700 C). The grown films were irradiated with Nd:YAG LASER and characterized by Photo-Induced Current Transient Spectroscopy, Photocurrent measurementand Current Voltage measurements. The defect levels are found to be significantly influenced by the growth temperature.

  8. Nanowire CdS-CdTe solar cells with molybdenum oxide as contact

    SciTech Connect

    Dang, Hongmei; Singh, Vijay P.

    2015-10-06

    Using a 10 nm thick molybdenum oxide (MoO3-x) layer as a transparent and low barrier contact to p-CdTe, we demonstrate nanowire CdS-CdTe solar cells with a power conversion efficiency of 11% under front side illumination. Annealing the as-deposited MoO3 film in N2 resulted in a reduction of the cell’s series resistance, from 9.97 Ω/cm2 to 7.69 Ω/cm2, and increase in efficiency from 9.9% to 11%. Under illumination from the back, the MoO3-x/Au side, the nanowire solar cells yielded Jsc of 21 mA/cm2 and efficiency of 8.67%. Our results demonstrate use of a thin layer transition metal oxide as a potential way for a transparent back contact to nanowire CdS-CdTe solar cells. As a result, this work has implications toward enabling a novel superstrate structure nanowire CdS-CdTe solar cell on Al foil substrate by a low cost roll-to roll fabrication process.

  9. Nanowire CdS-CdTe solar cells with molybdenum oxide as contact

    DOE PAGES [OSTI]

    Dang, Hongmei; Singh, Vijay P.

    2015-10-06

    Using a 10 nm thick molybdenum oxide (MoO3-x) layer as a transparent and low barrier contact to p-CdTe, we demonstrate nanowire CdS-CdTe solar cells with a power conversion efficiency of 11% under front side illumination. Annealing the as-deposited MoO3 film in N2 resulted in a reduction of the cell’s series resistance, from 9.97 Ω/cm2 to 7.69 Ω/cm2, and increase in efficiency from 9.9% to 11%. Under illumination from the back, the MoO3-x/Au side, the nanowire solar cells yielded Jsc of 21 mA/cm2 and efficiency of 8.67%. Our results demonstrate use of a thin layer transition metal oxide as a potentialmore » way for a transparent back contact to nanowire CdS-CdTe solar cells. As a result, this work has implications toward enabling a novel superstrate structure nanowire CdS-CdTe solar cell on Al foil substrate by a low cost roll-to roll fabrication process.« less

  10. Relic neutralino surface at a 100 TeV collider

    SciTech Connect

    Bramante, Joseph; Fox, Patrick J.; Martin, Adam; Ostdiek, Bryan; Plehn, Tilman; Schell, Torben; Takeuchi, Michihisa

    2015-03-11

    We map the parameter space for minimal supersymmetric Standard Model neutralino dark matter which freezes out to the observed relic abundance, in the limit that all superpartners except the neutralinos and charginos are decoupled. In this space of relic neutralinos, we show the dominant dark matter annihilation modes, the mass splittings among the electroweakinos, direct detection rates, and collider cross sections. The mass difference between the dark matter and the next-to-lightest neutral and charged states is typically much less than electroweak gauge boson masses. With these small mass differences, the relic neutralino surface is accessible to a future 100 TeV hadron collider, which can discover interneutralino mass splittings down to 1 GeV and thermal relic dark matter neutralino masses up to 1.5 TeV with a few inverse attobarns of luminosity. This coverage is a direct consequence of the increased collider energy: in the Standard Model events with missing transverse momentum in the TeV range have mostly hard electroweak radiation, distinct from the soft radiation shed in compressed electroweakino decays. As a result, we exploit this kinematic feature in final states including photons and leptons, tailored to the 100 TeV collider environment.

  11. In-situ crystallization of GeTe\\GaSb phase change memory stacked films

    SciTech Connect

    Velea, A.; Borca, C. N.; Grolimund, D.; Socol, G.; Galca, A. C.; Popescu, M.; Bokhoven, J. A. van

    2014-12-21

    Single and double layer phase change memory structures based on GeTe and GaSb thin films were deposited by pulsed laser deposition (PLD). Their crystallization behavior was studied using in-situ synchrotron techniques. Electrical resistance vs. temperature investigations, using the four points probe method, showed transition temperatures of 138 °C and 198 °C for GeTe and GaSb single films, respectively. It was found that after GeTe crystallization in the stacked films, Ga atoms from the GaSb layer diffused in the vacancies of the GeTe crystalline structure. Therefore, the crystallization temperature of the Sb-rich GaSb layer is decreased by more than 30 °C. Furthermore, at 210 °C, the antimony excess from GaSb films crystallizes as a secondary phase. At higher annealing temperatures, the crystalline Sb phase increased on the expense of GaSb crystalline phase which was reduced. Extended X-ray absorption fine structure (EXAFS) measurements at the Ga and Ge K-edges revealed changes in their local atomic environments as a function of the annealing temperature. Simulations unveil a tetrahedral configuration in the amorphous state and octahedral configuration in the crystalline state for Ge atoms, while Ga is four-fold coordinated in both as-deposited and annealed samples.

  12. Higgs Coupling Measurements at a 1 TeV Linear Collider

    SciTech Connect

    Barklow, T

    2003-12-18

    Methods for extracting Higgs boson signals at a 1 TeV center-of-mass energy e{sup +}e{sup -} linear collider are described. In addition, estimates are given for the accuracy with which branching fractions can be measured for Higgs boson decays to b{bar b} WW, gg, and {gamma}{gamma}.

  13. Nuclear structure relevant to neutrinoless double beta decay candidate {sup 130}Te and other recent results

    SciTech Connect

    Kay, B. P. [Physics Division, Argonne National Laboratory, Illinois 60439 (United States)

    2013-12-30

    We have undertaken a series of single-nucleon and pair transfer reaction measurements to help constrain calculations of the nuclear matrix elements for neutrinoless double beta decay. In this talk, a short overview of measurements relevant to the {sup 130}Te?{sup 130}Xe system is given. Brief mention is made of other recent and forthcoming results.

  14. Relic neutralino surface at a 100 TeV collider

    DOE PAGES [OSTI]

    Bramante, Joseph; Fox, Patrick J.; Martin, Adam; Ostdiek, Bryan; Plehn, Tilman; Schell, Torben; Takeuchi, Michihisa

    2015-03-11

    We map the parameter space for minimal supersymmetric Standard Model neutralino dark matter which freezes out to the observed relic abundance, in the limit that all superpartners except the neutralinos and charginos are decoupled. In this space of relic neutralinos, we show the dominant dark matter annihilation modes, the mass splittings among the electroweakinos, direct detection rates, and collider cross sections. The mass difference between the dark matter and the next-to-lightest neutral and charged states is typically much less than electroweak gauge boson masses. With these small mass differences, the relic neutralino surface is accessible to a future 100 TeVmore » hadron collider, which can discover interneutralino mass splittings down to 1 GeV and thermal relic dark matter neutralino masses up to 1.5 TeV with a few inverse attobarns of luminosity. This coverage is a direct consequence of the increased collider energy: in the Standard Model events with missing transverse momentum in the TeV range have mostly hard electroweak radiation, distinct from the soft radiation shed in compressed electroweakino decays. As a result, we exploit this kinematic feature in final states including photons and leptons, tailored to the 100 TeV collider environment.« less

  15. Shape-controlled narrow-gap SnTe nanostructures: From nanocubes to nanorods and nanowires

    DOE PAGES [OSTI]

    Guo, Shaojun; Andrew F. Fidler; He, Kai; Su, Dong; Chen, Gen; Lin, Qianglu; Pietryga, Jeffrey M.; Klimov, Victor I.

    2015-11-06

    In this study, the rational design and synthesis of narrow-gap colloidal semiconductor nanocrystals (NCs) is an important step toward the next generation of solution-processable photovoltaics, photodetectors, and thermoelectric devices. SnTe NCs are particularly attractive as a Pb-free alternative to NCs of narrow-gap lead chalcogenides. Previous synthetic efforts on SnTe NCs have focused on spherical nanoparticles. Here we report new strategies for synthesis of SnTe NCs with shapes tunable from highly monodisperse nanocubes, to nanorods (NRs) with variable aspect ratios, and finally to long, straight nanowires (NWs). Reaction at high temperature quickly forms thermodynamically favored nanocubes, but low temperatures lead tomore » elongated particles. Transmission electron microscopy studies of reaction products at various stages of the synthesis reveal that the growth and shape-focusing of monodisperse SnTe nanocubes likely involves interparticle ripening, while directional growth of NRs and NWs may be initiated by particle dimerization via oriented attachment.« less

  16. Methods for fabricating thin film III-V compound solar cell

    DOEpatents

    Pan, Noren; Hillier, Glen; Vu, Duy Phach; Tatavarti, Rao; Youtsey, Christopher; McCallum, David; Martin, Genevieve

    2011-08-09

    The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film III-V compound solar cell before it is separated from the substrate. To separate the thin film III-V compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film III-V compound solar cell.

  17. ACME-III and ACME-IV Final Campaign Reports

    SciTech Connect

    Biraud, S. C.

    2016-01-01

    The goals of the Atmospheric Radiation Measurement (ARM) Climate Research Facility’s third and fourth Airborne Carbon Measurements (ACME) field campaigns, ACME-III and ACME-IV, are: 1) to measure and model the exchange of CO2, water vapor, and other greenhouse gases by the natural, agricultural, and industrial ecosystems of the Southern Great Plains (SGP) region; 2) to develop quantitative approaches to relate these local fluxes to the concentration of greenhouse gases measured at the Central Facility tower and in the atmospheric column above the ARM SGP Central Facility, 3) to develop and test bottom-up measurement and modeling approaches to estimate regional scale carbon balances, and 4) to develop and test inverse modeling approaches to estimate regional scale carbon balance and anthropogenic sources over continental regions. Regular soundings of the atmosphere from near the surface into the mid-troposphere are essential for this research.

  18. Methods for improved growth of group III nitride semiconductor compounds

    DOEpatents

    Melnik, Yuriy; Chen, Lu; Kojiri, Hidehiro

    2015-03-17

    Methods are disclosed for growing group III-nitride semiconductor compounds with advanced buffer layer technique. In an embodiment, a method includes providing a suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. The method includes forming an AlN buffer layer by flowing an ammonia gas into a growth zone of the processing chamber, flowing an aluminum halide containing precursor to the growth zone and at the same time flowing additional hydrogen halide or halogen gas into the growth zone of the processing chamber. The additional hydrogen halide or halogen gas that is flowed into the growth zone during buffer layer deposition suppresses homogeneous AlN particle formation. The hydrogen halide or halogen gas may continue flowing for a time period while the flow of the aluminum halide containing precursor is turned off.

  19. OM Code Requirements For MOVs -- OMN-1 and Appendix III

    SciTech Connect

    Kevin G. DeWall

    2011-08-01

    The purpose or scope of the ASME OM Code is to establish the requirements for pre-service and in-service testing of nuclear power plant components to assess their operational readiness. For MOVs this includes those that perform a specific function in shutting down a reactor to the safe shutdown condition, maintaining the safe shutdown condition, and mitigating the consequences of an accident. This paper will present a brief history of industry and regulatory activities related to MOVs and the development of Code requirements to address weaknesses in earlier versions of the OM Code. The paper will discuss the MOV requirements contained in the 2009 version of ASME OM Code, specifically Mandatory Appendix III and OMN-1, Revision 1.

  20. AVTA: 2010 Toyota Prius Gen III HEV Testing Results

    Office of Energy Efficiency and Renewable Energy (EERE)

    The Vehicle Technologies Office's Advanced Vehicle Testing Activity carries out testing on a wide range of advanced vehicles and technologies on dynamometers, closed test tracks, and on-the-road. These results provide benchmark data that researchers can use to develop technology models and guide future research and development. The following reports describe results of testing done on a 2010 Toyota Prius III hybrid-electric vehicle. Baseline data, which provides a point of comparison for the other test results, was collected at two different research laboratories. Baseline and other data collected at Idaho National Laboratory is in the attached documents. Baseline and battery testing data collected at Argonne National Laboratory is available in summary and CSV form on the Argonne Downloadable Dynometer Database site (http://www.anl.gov/energy-systems/group/downloadable-dynamometer-databas...). Taken together, these reports give an overall view of how this vehicle functions under extensive testing.

  1. Preparation and reactivity of macrocyclic rhodium(III) alkyl complexes

    SciTech Connect

    Carraher, Jack M.; Ellern, Arkady; Bakac, Andreja

    2013-09-21

    Macrocyclic rhodium(II) complexes LRh(H2O)(2+) (L = L-1 = cyclam and L-2 = meso-Me-6-cyclam) react with alkyl hydroperoxides RC(CH3)(2)OOH to generate the corresponding rhodium(III) alkyls L(H2O)RhR2+ (R = CH3, C2H5, PhCH2). Methyl and benzyl complexes can also be prepared by bimolecular group transfer from alkyl cobaloximes (dmgH)(2)(H2O) CoR and (dmgBF(2))(2)(H2O) CoR (R = CH3, PhCH2) to LRh(H2O)(2+). The new complexes were characterized by solution NMR and by crystal structure analysis. They exhibit great stability in aqueous solution at room temperature, but undergo efficient Rh-C bond cleavage upon photolysis. (C) 2013 Elsevier B.V. All rights reserved.

  2. Section III, Division 5 - Development and Future Directions

    SciTech Connect

    D. K. Morton; R I Jetter; James E Nestell; T. D. Burchell; T L Sham

    2012-07-01

    This paper provides commentary on a new division under Section III of the ASME Boiler and Pressure Vessel (BPV) Code. This new Division 5 has an issuance date of November 1, 2011 and is part of the 2011 Addenda to the 2010 Edition of the BPV Code. The new Division covers the rules for the design, fabrication, inspection and testing of components for high temperature nuclear reactors. Information is provided on the scope and need for Division 5, the structure of Division 5, where the rules originated, the various changes made in finalizing Division 5, and the future near-term and long-term expectations for Division 5 development. Portions of this paper were based on Chapter 17 of the Companion Guide to the ASME Boiler & Pressure Vessel Code, Fourth Edition, © ASME, 2012, Reference.

  3. Burst mode FEL with the ETA-III induction linac

    SciTech Connect

    Lasnier, C.J.; Allen, S.L.; Felker, B.

    1993-05-13

    Pulses of 140 GHz microwaves have been produced at a 2 kHz rate using the ETA-III induction linac and IMP wiggler. The accelerator was run in bursts of up to 50 pulses at 6 MeV and greater than 2 kA peak current. A feedback timing control system was used to synchronize acceleration voltage pulses with the electron beam, resulting in sufficient reduction of the corkscrew and energy sweep for efficient FEL operation. Peak microwave power for short bursts was in the range 0.5--1.1 GW, which is comparable to the single-pulse peak power of 0.75--2 GW. FEL bursts of more than 25 pulses were obtained.

  4. Signals of a 2 TeV $W'$ boson and a heavier $Z'$ boson

    SciTech Connect

    Dobrescu, Bogdan A.; Fox, Patrick J.

    2015-11-05

    We construct an SU(2)L x SU(2)R x U(1)B-L model with a Higgs sector that consists of a bidoublet and a doublet, and with a right-handed neutrino sector that includes one Dirac fermion and one Majorana fermion. This model explains the CMS and ATLAS excess events in the e+e-jj, jj, Wh0 and WZ channels in terms of a W' boson of mass near 1.9 TeV and of coupling gR in the 0.4-0.5 range (with the lower half preferred by the limits on tb- resonances). We found that the production cross section of this W' boson at the 13 TeV LHC is in the 720-1100 fb range, allowing sensitivity in more than 17 final states. Furthermore, we determine that the Z' boson has a mass in the 2.9-4.5 TeV range and several decay channels that can be probed in Run 2 of the LHC, including cascade decays via heavy Higgs bosons. Interpreting the CMS e+e-event at 2.9 TeV as coming from the Z', the mass ratio of the Z' and W' bosons requires gR ≈0.48, which implies a pp →Z' → ℓ+-cross section of 2 fb at √s = 13 TeV.

  5. Galvanomagnetic properties and electronic structure of iron-doped PbTe

    SciTech Connect

    Skipetrov, E. P.; Kruleveckaya, O. V.; Skipetrova, L. A.; Knotko, A. V.; Slynko, E. I.; Slynko, V. E.

    2015-11-21

    We synthesize an iron-doped PbTe single-crystal ingot and investigate the phase composition and distribution of the iron impurity along the ingot as well as galvanomagnetic properties in weak magnetic fields (4.2 K ≤ T ≤ 300 K, B ≤ 0.07 T) of Pb{sub 1−y}Fe{sub y}Te alloys. We find microscopic inclusions enriched with iron and regions with a chemical composition close to FeTe in the heavily doped samples, while the iron impurity content in the main phase rises only slightly along the length of the ingot reaching the impurity solubility limit at approximately 0.6 mol. %. Samples from the initial and the middle parts of the ingot are characterized by p-type metal conductivity. An increase of the iron impurity content leads to a decrease in the free hole concentration and to a stabilization of galvanomagnetic parameters due to the pinning of the Fermi level by the iron resonant impurity level E{sub Fe} lying under the bottom of the valence band (E{sub v} − E{sub Fe} ≈ 16 meV). In the samples from the end of the ingot, a p-n inversion of the conductivity type and an increase of the free electron concentration along the ingot are revealed despite the impurity solubility limit being reached. The kinetics of changes of charge carrier concentration and of the Fermi energy along the ingot is analyzed in the framework of the six-band Dimmock dispersion relation. A model is proposed for the electronic structure rearrangement of Pb{sub 1−y}Fe{sub y}Te with doping, which may also be used for PbTe doped with other transition metals.

  6. Neodymium(III) Complexation by Amino-Carbohydrates via a Ligand-Controlled Hydrolysis Mechanism

    SciTech Connect

    Levitskaia, Tatiana G.; Chen, Yongsheng; Fulton, John L.; Sinkov, Sergey I.

    2011-07-28

    Chelation of neodymium-III Nd(III) by D-glucosamine (DGA) and chitosan was investigated in solution at near-physiological pH and ionic strength. This research demonstrates the first example of the lanthanide ion heteroleptic hydroxo-carbohydrate complex in solution. It was demonstrated that DGA and chitosan suppressed formation of polynuclear Nd(III) species at elevated pH.

  7. Method and apparatus for use of III-nitride wide bandgap semiconductors in optical communications

    DOEpatents

    Hui, Rongqing; Jiang,Hong-Xing; Lin, Jing-Yu

    2008-03-18

    The present disclosure relates to the use of III-nitride wide bandgap semiconductor materials for optical communications. In one embodiment, an optical device includes an optical waveguide device fabricated using a III-nitride semiconductor material. The III-nitride semiconductor material provides for an electrically controllable refractive index. The optical waveguide device provides for high speed optical communications in an infrared wavelength region. In one embodiment, an optical amplifier is provided using optical coatings at the facet ends of a waveguide formed of erbium-doped III-nitride semiconductor materials.

  8. DE-SOL-0002555 WIPP Solicitation J-23 PART III - LIST OF DOCUMENTS...

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    OTHER ATTACHMENTS SECTION J ATTACHMENT F: GUIDANCE FOR PREPARATION OF DIVERSITY PLAN DE-SOL-0002555 WIPP Solicitation J-24 PART III - LIST OF DOCUMENTS, EXHIBITS AND OTHER...

  9. Final Report - Vapor Transport Deposition for III-V Thin Film...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Silicon, the dominant photovoltaic (PV) technology, is reaching its fundamental ... III-V semiconductors such as GaAs are used to make the highest-efficiency photovoltaic ...

  10. DOE-National-Cleanup-Workshop-Outlook-and-Challenges-John-Hale-III |

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Department of Energy DOE-National-Cleanup-Workshop-Outlook-and-Challenges-John-Hale-III DOE-National-Cleanup-Workshop-Outlook-and-Challenges-John-Hale-III John Hale III, Director of the Office of Small and Disadvantage Business Utilization (OSDBU) at the Department of Energy, spoke at the 1st Annual DOE National Cleanup Workshop, held in September 2015. Here is the slide presentation that was used at the workshop. DOE-National-Cleanup-Workshop-Outlook-and-Challenges-John-Hale-III.pdf (2.07

  11. Low-Cost III-V Solar Cells | Photovoltaic Research | NREL

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Growth of III-V device structures using advanced hydride vapor-phase epitaxy (HVPE) Computational fluid dynamics and thermodynamickinetic reaction modeling Advanced semiconductor ...

  12. Group I-III-VI.sub.2 semiconductor films for solar cell application

    DOEpatents

    Basol, Bulent M.; Kapur, Vijay K.

    1991-01-01

    This invention relates to an improved thin film solar cell with excellent electrical and mechanical integrity. The device comprises a substrate, a Group I-III-VI.sub.2 semiconductor absorber layer and a transparent window layer. The mechanical bond between the substrate and the Group I-III-VI.sub.2 semiconductor layer is enhanced by an intermediate layer between the substrate and the Group I-III-VI.sub.2 semiconductor film being grown. The intermediate layer contains tellurium or substitutes therefor, such as Se, Sn, or Pb. The intermediate layer improves the morphology and electrical characteristics of the Group I-III-VI.sub.2 semiconductor layer.

  13. Impact of annealing on the chemical structure and morphology of the thin-film CdTe/ZnO interface

    SciTech Connect

    Horsley, K. Hanks, D. A.; Weir, M. G.; Beal, R. J.; Wilks, R. G.; Blum, M.; Häming, M.; Hofmann, T.; Weinhardt, L.; and others

    2014-07-14

    To enable an understanding and optimization of the optoelectronic behavior of CdTe-ZnO nanocomposites, the morphological and chemical properties of annealed CdTe/ZnO interface structures were studied. For that purpose, CdTe layers of varying thickness (4–24 nm) were sputter-deposited on 100 nm-thick ZnO films on surface-oxidized Si(100) substrates. The morphological and chemical effects of annealing at 525 °C were investigated using X-ray Photoelectron Spectroscopy (XPS), X-ray-excited Auger electron spectroscopy, energy dispersive X-ray spectroscopy, scanning electron microscopy, and atomic force microscopy. We find a decrease of the Cd and Te surface concentration after annealing, parallel to an increase in Zn and O signals. While the as-deposited film surfaces show small grains (100 nm diameter) of CdTe on the ZnO surface, annealing induces a significant growth of these grains and separation into islands (with diameters as large as 1 μm). The compositional change at the surface is more pronounced for Cd than for Te, as evidenced using component peak fitting of the Cd and Te 3d XPS peaks. The modified Auger parameters of Cd and Te are also calculated to further elucidate the local chemical environment before and after annealing. Together, these results suggest the formation of tellurium and cadmium oxide species at the CdTe/ZnO interface upon annealing, which can create a barrier for charge carrier transport, and might allow for a deliberate modification of interface properties with suitably chosen thermal treatment parameters.

  14. Complexation Studies of Bidentate Heterocyclic N-Donor Ligands with Nd(III) and Am(III)

    SciTech Connect

    Ogden, Mark; Hoch, Courtney L.; Sinkov, Sergey I.; Meier, Patrick; Lumetta, Gregg J.; Nash, Kenneth L.

    2011-11-28

    A new bidentate nitrogen donor complexing agent that combines pyridine and triazole functional groups, 2-((4-phenyl-1H-1,2,3-triazol-1-yl)methyl)pyridine (PTMP), has been synthesized. The strength of its complexes with trivalent americium (Am3+) and neodymium (Nd3+) in anhydrous methanol has been evaluated using spectrophotometric techniques. The purpose of this investigation is to assess this ligand (as representative of a class of similarly structured species) as a possible model compound for the challenging separation of trivalent actinides from lanthanides. This separation, important in the development of advanced nuclear fuel cycles, is best achieved through the agency of multidentate chelating agents containing some number of nitrogen or sulfur donor groups. To evaluate the relative strength of the bidentate complexes, the derived constants are compared to those of the same metal ions with 2,2*-bipyridyl (bipy), 1,10-phenanthroline (phen), and 2-pyridin-2-yl-1H-benzimidazole (PBIm). At issue is the relative affinity of the triazole moiety for trivalent f element ions. For all ligands, the derived stability constants are higher for Am3+ than Nd3+. In the case of Am3+ complexes with phen and PBIm, the presence of 1:2 (AmL2) species is indicated. Possible separations are suggested based on the relative stability and stoichiometry of the Am3+ and Nd3+ complexes. It can be noted that the 1,2,3-triazolyl group imparts a potentially useful selectivity for trivalent actinides (An(III)) over trivalent lanthanides (Ln(III)), though the attainment of higher complex stoichiometries in actinide compared with lanthanide complexes may be an important driver for developing successful separations.

  15. Manufacturing Cost Analysis Relevant to Single-and Dual-Junction Photovoltaic Cells Fabricated with III-Vs and III-Vs Grown on Czochralski Silicon (Presentation)

    SciTech Connect

    Woodhouse, M.; Goodrich, A.

    2014-05-01

    In this analysis we examine the current, mid-term, and long-term manufacturing costs for III-Vs deposited by traditional Metal Organic Vapor Phase Epitaxy (MOVPE).

  16. Validation of the U.S. NRC coupled code system TRITON/TRACE/PARCS with the special power excursion reactor test III (SPERT III)

    SciTech Connect

    Wang, R. C.; Xu, Y.; Downar, T.; Hudson, N.

    2012-07-01

    The Special Power Excursion Reactor Test III (SPERT III) was a series of reactivity insertion experiments conducted in the 1950's. This paper describes the validation of the U.S. NRC Coupled Code system TRITON/PARCS/TRACE to simulate reactivity insertion accidents (RIA) by using several of the SPERT III tests. The work here used the SPERT III E-core configuration tests in which the RIA was initiated by ejecting a control rod. The resulting super-prompt reactivity excursion and negative reactivity feedback produced the familiar bell shaped power increase and decrease. The energy deposition during such a power peak has important safety consequences and provides validation basis for core coupled multi-physics codes. The transients of five separate tests are used to benchmark the PARCS/TRACE coupled code. The models were thoroughly validated using the original experiment documentation. (authors)

  17. Surfactant-Free Synthesis of Bi2Te3-Te Micro-Nano Heterostructure with Enhanced Thermoelectric Figure of Merit

    SciTech Connect

    Zhang, Yichi; Wang, Heng; Kraemer, Stephan; Shi, Yifeng; Zhang, Fan; Snedaker, Matt; Ding, Kunlun; Moskovits, Martin; Snyder, G. Jeffrey; Stucky, Galen D.

    2011-03-21

    An ideal thermoelectric material would be a semiconductor with high electrical conductivity and relatively low thermal conductivity: an “electron crystal, phonon glass”. Introducing nanoscale heterostructures into the bulk TE matrix is one way of achieving this intuitively anomalous electron/phonon transport behavior. The heterostructured interfaces are expected to play a significant role in phonon scattering to reduce thermal conductivity and in the energy-dependent scattering of electrical carriers to improve the Seebeck coefficient. A nanoparticle building block assembly approach is plausible to fabricate three-dimensional heterostructured materials on a bulk commercial scale. However, a key problem in applying this strategy is the possible negative impact on TE performance of organic residue from the nanoparticle capping ligands. Herein, we report a wet chemical, surfactant-free, low-temperature, and easily up-scalable strategy for the synthesis of nanoscale heterophase Bi₂Te₃-Te via a galvanic replacement reaction. The micro-nano heterostructured material is fabricated bottom-up, by mixing the heterophase with commercial Bi₂Te₃. This unique structure shows an enhanced zT value of ~0.4 at room temperature. This heterostructure has one of the highest figures of merit among bismuth telluride systems yet achieved by a wet chemical bottom-up assembly. In addition, it shows a 40% enhancement of the figure of merit over our lab-made material without nanoscale heterostructures. This enhancement is mainly due to the decrease in the thermal conductivity while maintaining the power factor. Overall, this cost-efficient and room-temperature synthesis methodology provides the potential for further improvement and large-scale thermoelectric applications.

  18. Search for contact interactions in dimuon events from pp collisions at ?s=7 TeV with the ATLAS detector

    DOE PAGES [OSTI]

    Aad, G.; Abbott, B.; Abdallah, J.; Abdelalim, A. A.; Abdesselam, A.; Abdinov, O.; Abi, B.; Abolins, M.; Abramowicz, H.; Abreu, H.; et al

    2011-07-01

    A search for contact interactions has been performed using dimuon events recorded with the ATLAS detector in proton-proton collisions at ?s=7 TeV. The data sample corresponds to an integrated luminosity of 42 pb?. No significant deviation from the standard model is observed in the dimuon mass spectrum, allowing the following 95% C.L. limits to be set on the energy scale of contact interactions: ?>4.9 TeV (4.5 TeV) for constructive (destructive) interference in the left-left isoscalar compositeness model. These limits are the most stringent to date for ??qq contact interactions.

  19. Chemical constraints on the contribution of population III stars to cosmic reionization

    SciTech Connect

    Kulkarni, Girish; Hennawi, Joseph F. [Max Planck Institute for Astronomy, Knigstuhl 17, D-69117 Heidelberg (Germany); Rollinde, Emmanuel; Vangioni, Elisabeth, E-mail: girish@mpia-hd.mpg.de [Institut d'Astrophysique de Paris, UMR 7095, UPMC, Paris VI, 98 bis boulevard Arago, F-75014 Paris (France)

    2014-05-20

    Recent studies have highlighted that galaxies at z = 6-8 fall short of producing enough ionizing photons to reionize the intergalactic medium, and suggest that Population III stars could resolve this tension, because their harder spectra can produce ?10 more ionizing photons than Population II. We use a semi-analytic model of galaxy formation, which tracks galactic chemical evolution, to gauge the impact of Population III stars on reionization. Population III supernovae produce distinct metal abundances, and we argue that the duration of the Population III era can be constrained by precise relative abundance measurements in high-z damped Ly? absorbers (DLAs), which provide a chemical record of past star formation. We find that a single generation of Population III stars can self-enrich galaxies above the critical metallicity Z {sub crit} = 10{sup 4} Z {sub ?} for the Population III-to-II transition, on a very short timescale t {sub self-enrich} ? 10{sup 6} yr, owing to the large metal yields and short lifetimes of Population III stars. This subsequently terminates the Population III era, so they contribute ? 50% of the ionizing photons only for z ? 30, and at z = 10 contribute <1%. The Population III contribution can be increased by delaying metal mixing into the interstellar medium. However, comparing the resulting metal abundance pattern to existing measurements in z ? 6 DLAs, we show that the observed [O/Si] ratios of absorbers rule out Population III stars being a major contributor to reionization. Future abundance measurements of z ? 7-8 QSOs and gamma-ray bursts should probe the era when the chemical vestiges of Population III star formation become detectable.

  20. Role of chalcogen vapor annealing in inducing bulk superconductivity in Fe1+yTe1-xSex [How does annealing in chalcogen vapor induce superconductivity in Fe1+yTe-xSex?

    DOE PAGES [OSTI]

    Lin, Wenzhi; Ganesh, P.; Gianfrancesco, Anthony; Wang, Jun; Berlijn, Tom; Maier, Thomas A.; Kalinin, Sergei V.; Sales, Brian C.; Pan, Minghu

    2015-02-01

    Recent investigations have shown that Fe1+yTe1-xSex can be made superconducting by annealing it in Se and O vapors. The current lore is that these chalcogen vapors induce superconductivity by removing the magnetic excess Fe atoms. To investigate this phenomenon we performed a combination of magnetic susceptibility, specific heat and transport measurements together with scanning tunneling microscopy and spectroscopy and density functional theory calculations on Fe1+yTe1-xSex treated with Te vapor. We conclude that the main role of the Te vapor is to quench the magnetic moments of the excess Fe atoms by forming FeTem (m ≥ 1) complexes. We show thatmore » the remaining FeTem complexes are still damaging to the superconductivity and therefore that their removal potentially could further improve superconductive properties in these compounds.« less

  1. Head and Neck Squamous Cell Carcinomas Do Not Express EGFRvIII

    SciTech Connect

    Melchers, Lieuwe J.; Clausen, Martijn J.A.M.; Mastik, Mirjam F.; Slagter-Menkema, Lorian; Laan, Bernard F.A.M. van der; Roodenburg, Jan L.N.; Schuuring, Ed

    2014-10-01

    Purpose: To assess the prevalence of EGFRvIII, a specific variant of EGFR (epidermal growth factor receptor), in 3 well-defined cohorts of head and neck squamous cell carcinoma (HNSCC). Methods and Materials: Immunohistochemistry for the specific detection of EGFRvIII using the L8A4 antibody was optimized on formalin-fixed, paraffin-embedded tissue using glioblastoma tissue. It was compared with EGFR and EGFRvIII RNA expression using a specific reverse transcription–polymerase chain reaction also optimized for formalin-fixed, paraffin-embedded tissue. Tissue microarrays including 531 HNSCCs of various stages with complete clinicopathologic and follow-up data were tested for the presence of EGFRvIII. Results: None of the 531 cases showed EGFRvIII protein expression. Using an immunohistochemistry protocol reported by others revealed cytoplasmic staining in 8% of cases. Reverse transcription–polymerase chain reaction for the EGFRvIII transcript of the 28 highest cytoplasmic staining cases, as well as 69 negative cases, did not show expression in any of the tested cases, suggesting aspecific staining by a nonoptimal protocol. Conclusions: The EGFRvIII mutation is not present in HNSCC. Therefore, EGFRvIII does not influence treatment response in HNSCC and is not a usable clinical prognostic marker.

  2. Method for Improving Mg Doping During Group-III Nitride MOCVD

    DOEpatents

    Creighton, J. Randall; Wang, George T.

    2008-11-11

    A method for improving Mg doping of Group III-N materials grown by MOCVD preventing condensation in the gas phase or on reactor surfaces of adducts of magnesocene and ammonia by suitably heating reactor surfaces between the location of mixing of the magnesocene and ammonia reactants and the Group III-nitride surface whereon growth is to occur.

  3. Iron (III) Matrix Effects on Mineralization and Immobilization of Actinides

    SciTech Connect

    Cynthia-May S. Gong; Tyler A. Sullens; Kenneth R. Czerwinski

    2006-01-01

    Abstract - A number of models for the Yucca Mountain Project nuclear waste repository use studies of actinide sorption onto well-defined iron hydroxide materials. In the case of a waste containment leak, however, a complex interaction between dissolved waste forms and failed containment vessel components can lead to immediate precipitation of migratory iron and uranyl in the silicate rich near-field environment. Use of the Fe(III) and UO22+ complexing agent acetohydroxamic acid (AHA) as a colorimetric agent for visible spectrophotometry is well-known. Using the second derivative of these spectra a distinct shift in iron complexation in the presence of silicate is seen that is not seen with uranyl or alone. Silica also decreases the ability of uranyl and ferric solutions to absorb hydroxide, hastening precipitation. These ferric silicate precipitates are highly amorphous and soluble. Precipitates formed in the presence of uranyl below ~1 mol% exhibit lower solubility than precipitates from up to 50 mol % and of uranyl silicates alone.

  4. Pair instability supernovae of very massive population III stars

    SciTech Connect

    Chen, Ke-Jung; Woosley, Stan; Heger, Alexander; Almgren, Ann; Whalen, Daniel J.

    2014-09-01

    Numerical studies of primordial star formation suggest that the first stars in the universe may have been very massive. Stellar models indicate that non-rotating Population III stars with initial masses of 140-260 M {sub ☉} die as highly energetic pair-instability supernovae. We present new two-dimensional simulations of primordial pair-instability supernovae done with the CASTRO code. Our simulations begin at earlier times than previous multidimensional models, at the onset of core contraction, to capture any dynamical instabilities that may be seeded by core contraction and explosive burning. Such instabilities could enhance explosive yields by mixing hot ash with fuel, thereby accelerating nuclear burning, and affect the spectra of the supernova by dredging up heavy elements from greater depths in the star at early times. Our grid of models includes both blue supergiants and red supergiants over the range in progenitor mass expected for these events. We find that fluid instabilities driven by oxygen and helium burning arise at the upper and lower boundaries of the oxygen shell ∼20-100 s after core bounce. Instabilities driven by burning freeze out after the SN shock exits the helium core. As the shock later propagates through the hydrogen envelope, a strong reverse shock forms that drives the growth of Rayleigh-Taylor instabilities. In red supergiant progenitors, the amplitudes of these instabilities are sufficient to mix the supernova ejecta.

  5. Evaluate fundamental approaches to longwall dust control. Phase III report

    SciTech Connect

    Babbitt, C.; Bartlett, P.; Kelly, J.; Ludlow, J.; Mangolds, A.; Rajan, S.; Ruggieri, S.; Varga, E.

    1984-03-31

    The overall objective of the contract is to evaluate the effectiveness of available dust control technology for double-drum shearer longwall sections in a coordinated, systematic program at a few longwall test sections and to make the results available to the entire coal mining industry. This program is investigating nine different dust control techniques. These nine subprograms encompass a broad range of dust control measures ranging from administrative controls to new hardware. They span not only presently employed methods but also those recently adopted in the United States and those proposed for the future. This report documents the Phase III effort on each of the subprograms. For clarity, the report is divided in sections by subprogram as follows: Section 2, Subprogram A - passive barriers/spray air movers for dust control; Section 3, Subprogram B - practical aspects of deep cutting; Section 4, Subprogram C - stage loader dust control; Section 5, Subprogram D - longwall automation technology; Section 6, Subprogram E - longwall application of ventilation curtains; Section 7, Subprogram F - reversed drum rotation; Section 8, Subprogram G - reduction of shield generated dust; Section 9, Subprogram H - air canopies for longwalls; and Section 10, Subprogram I - mining practices. 43 figures, 11 tables.

  6. Cooling effect of nanoscale Bi2Te3/Sb2Te3 multilayered thermoelectric thin films

    SciTech Connect

    Hines, Mardecial; Lenhardt, Joshua; Lu, Ming; Jiang, Li; Xiao, Zhigang

    2012-01-01

    Managing high heat flux is one of the greatest technical challenges the integrated circuit (IC) industry is facing because the rising temperature limits device minimization and decreases its lifetime. In this paper, we report the characterization of the cooling effect of nanoscale Bi2Te3/Sb2Te3 multilayered thin films. The multilayerthin film was prepared with e-beam evaporation, and had 21 layers (5-nm-thick each layer and 105-nm-thick total). A thermoelectric device of the multilayerfilm, which is sandwiched between a diode temperature sensor and a platinum temperature sensor, was fabricated to measure the cooling effect. A maximum cooling temperature difference of about 3K was obtained from the film at an applied dc electrical current of 5 mA. The nanoscale multilayerfilm could be integrated in the IC devices for the application of high-efficiency thermoelectric solid-state cooling.

  7. The High-Resolution Lightweight Telescope for the EUV (HiLiTE)

    SciTech Connect

    Martinez-Galarce, D S; Boerner, P; Soufli, R; De Pontieu, B; Katz, N; Title, A; Gullikson, E M; Robinson, J C; Baker, S L

    2008-06-02

    The High-resolution Lightweight Telescope for the EUV (HiLiTE) is a Cassegrain telescope that will be made entirely of Silicon Carbide (SiC), optical substrates and metering structure alike. Using multilayer coatings, this instrument will be tuned to operate at the 465 {angstrom} Ne VII emission line, formed in solar transition region plasma at {approx}500,000 K. HiLiTE will have an aperture of 30 cm, angular resolution of {approx}0.2 arc seconds and operate at a cadence of {approx}5 seconds or less, having a mass that is about 1/4 that of one of the 20 cm aperture telescopes on the Atmospheric Imaging Assembly (AIA) instrument aboard NASA's Solar Dynamics Observatory (SDO). This new instrument technology thus serves as a path finder to a post-AIA, Explorer-class missions.

  8. Diffusion-Reaction Modeling of Cu Migration in CdTe Solar Devices

    SciTech Connect

    Guo, Da; Brinkman, Daniel; Fang, Tian; Akis, Richard; Sankin, Igor; Vasileska, Dragica; Ringhofer, Christian

    2015-09-04

    In this work, we report on development of one-dimensional (1D) finite-difference and two-dimensional (2D) finite-element diffusion-reaction simulators to investigate mechanisms behind Cu-related metastabilities observed in CdTe solar cells [1]. The evolution of CdTe solar cells performance has been studied as a function of stress time in response to the evolution of associated acceptor and donor states. To achieve such capability, the simu-lators solve reaction-diffusion equations for the defect states in time-space domain self-consistently with the free carrier transport. Re-sults of 1-D and 2-D simulations have been compared to verify the accuracy of solutions.

  9. Thermoelectric properties of polycrystalline In4Se3 and In4Te3

    SciTech Connect

    Shi, Xun; Cho, Jung Y; Salvador, James R.; Yang, Jihui; Wang, Hsin

    2010-01-01

    High thermoelectric performance of a single crystal layered compound In{sub 4}Se{sub 3} was reported recently. We present here an electrical and thermal transport property study over a wide temperature range for polycrystalline samples of In{sub 4}Se{sub 3} and In{sub 4}Te{sub 3}. Our data demonstrate that these materials are lightly doped semiconductors, leading to large thermopower and resistivity. Very low thermal conductivity, below 1 W/m K, is observed. The power factors for In{sub 4}Se{sub 3} and In{sub 4}Te{sub 3} are much smaller when compared with state-of-the-art thermoelectric materials. This combined with the very low thermal conductivity results in the maximum ZT value of less than 0.6 at 700 K for In{sub 4}Se{sub 3}.

  10. Influence of deep level defects on carrier lifetime in CdZnTe:In

    SciTech Connect

    Guo, Rongrong; Jie, Wanqi Wang, Ning; Zha, Gangqiang; Xu, Yadong; Wang, Tao; Fu, Xu

    2015-03-07

    The defect levels and carrier lifetime in CdZnTe:In crystal were characterized with photoluminescence, thermally stimulated current measurements, as well as contactless microwave photoconductivity decay (MWPCD) technique. An evaluation equation to extract the recombination lifetime and the reemission time from MWPCD signal is developed based on Hornbeck-Haynes trapping model. An excellent agreement between defect level distribution and carrier reemission time in MWPCD signal reveals the tail of the photoconductivity decay is controlled by the defect level reemission effect. Combining {sup 241}Am gamma ray radiation response measurement and laser beam induced transient current measurement, it predicted that defect level with the reemission time shorter than the collection time could lead to better charge collection efficiency of CdZnTe detector.

  11. Fabrication of fluorescent composite with ultrafast aqueous synthesized high luminescent CdTe quantum dots

    SciTech Connect

    Zhang, Lei, E-mail: mejswu@ust.hk; Chen, Haibin, E-mail: mejswu@ust.hk, E-mail: mejswu@ust.hk; Wu, Jingshen, E-mail: mejswu@ust.hk, E-mail: mejswu@ust.hk [Department of Mechanical and Aerospace Engineering, The Hong Kong University of Science and Technology, Hong Kong and Fok Ying Tung Graduate School, The Hong Kong University of Science and Technology (Hong Kong); Bi, Xianghong, E-mail: takubatch@gmail.com [Fok Ying Tung Graduate School, The Hong Kong University of Science and Technology (Hong Kong)

    2014-05-15

    Without precursor preparation, inert gas protection and enormous amount of additives and reductants, CdTe quantum dots (QDs) can be rapidly synthesized with high quality. A 600 nm photoluminescence peak wavelength could be obtained within 1 hour's refluxing through minimal addition of 1,2-diaminoethane (DAE). The theoretical design for the experiments are illustrated and further proved by the characterization results with different concentrations and reagents. On the other hand, generation of CdTe QDs was found even under room temperature by applying droplet quantity of DAE. This indicates that QDs can be synthesized with simply a bottle and no enormous additives required. The QDs were mixed into the epoxy matrix through solution casting method with cetyltrimethylammonium (CTA) capping for phase transfer. The acquired epoxy based nanocomposite exhibits good transparency, compatibility and fluorescence.

  12. Higgs mass from compositeness at a multi-TeV scale

    DOE PAGES [OSTI]

    Cheng, Hsin -Chia; Dobrescu, Bogdan A.; Gu, Jiayin

    2014-08-18

    Within composite Higgs models based on the top seesaw mechanism, we show that the Higgs field can arise as the pseudo Nambu-Goldstone boson of the broken U(3)more » $$_{L}$$ chiral symmetry associated with a vector-like quark and the t-b doublet. As a result, the lightest CP-even neutral state of the composite scalar sector is lighter than the top quark, and can be identified as the newly discovered Higgs boson. As a result, constraints on weak-isospin violation push the chiral symmetry breaking scale above a few TeV, implying that other composite scalars are probably too heavy to be probed at the LHC, but may be within reach at a future hadron collider with center-of-mass energy of about 100 TeV.« less

  13. Search for Dijet Resonances in 7 TeV pp Collisions at CMS

    SciTech Connect

    Khachatryan, V.; et al.

    2010-11-01

    A search for narrow resonances in the dijet mass spectrum is performed using data corresponding to an integrated luminosity of 2.9 inverse pb collected by the CMS experiment at the LHC. Upper limits at the 95% confidence level (CL) are presented on the product of the resonance cross section, branching fraction into dijets, and acceptance, separately for decays into quark-quark, quark-gluon, or gluon-gluon pairs. The data exclude new particles predicted in the following models at the 95% CL: string resonances, with mass less than 2.50 TeV, excited quarks, with mass less than 1.58 TeV, and axigluons, colorons, and E_6 diquarks, in specific mass intervals. This extends previously published limits on these models.

  14. Anti pp searches for quark-gluon plasma at TeV I

    SciTech Connect

    Turkot, F.

    1986-06-01

    Three experiments that have been approved to run at TeV I are discussed from the viewpoint of their capability to search for evidence of the QCD phase transition in proton-antiproton collisions at 1.6 TeV. One of these experiments, E-735, was proposed as a dedicated search for quark-gluon plasma effects with a detector designed to study large total E/sub T/, low P/sub T/ individual particles. The other two, E-741 (CDF) and E-740 (DO), embody general purpose four-pi detectors designed primarily to study the physics of W and Z bosons and other large P/sub T/ phenomena. The detectors and their quark-gluon plasma signals are compared. 8 refs., 6 figs., 4 tabs. (LEW)

  15. Broadening of optical transitions in polycrystalline CdS and CdTe thin films

    SciTech Connect

    Li Jian; Chen Jie; Collins, R. W.

    2010-11-01

    The dielectric functions {epsilon} of polycrystalline CdS and CdTe thin films sputter deposited onto Si wafers were measured from 0.75 to 6.5 eV by in situ spectroscopic ellipsometry. Differences in {epsilon} due to processing variations are well understood using an excited carrier scattering model. For each sample, a carrier mean free path {lambda} is defined that is found to be inversely proportional to the broadening of each of the band structure critical points (CPs) deduced from {epsilon}. The rate at which broadening occurs with {lambda}{sup -1} is different for each CP, enabling a carrier group speed {upsilon}{sub g} to be identified for the CP. With the database for {upsilon}{sub g}, {epsilon} can be analyzed to evaluate the quality of materials used in CdS/CdTe photovoltaic heterojunctions.

  16. Right-Handed Neutrinos and the 2 TeV $W'$ Boson

    SciTech Connect

    Coloma, Pilar; Dobrescu, Bogdan A.; Lopez-Pavon, Jacobo

    2015-12-30

    The CMS e+e-jj events of invariant mass near 2 TeV are consistent with a W' boson decaying into an electron and a right-handed neutrino whose TeV-scale mass is of the Dirac type. We show that the Dirac partner of the right-handed electron-neutrino can be the right-handed tau-neutrino. Furthermore, a prediction of this model is that the sum of the τ+e+jj and τ-e-jj signal cross sections equals twice that for e+e-jj. The Standard Model neutrinos acquire Majorana masses and mixings compatible with neutrino oscillation data.

  17. Photoluminescence Imaging of Large-Grain CdTe for Grain Boundary Characterization

    SciTech Connect

    Johnston, Steve; Allende Motz, Alyssa; Reese, Matthew O.; Burst, James M.; Metzger, Wyatt K.

    2015-06-14

    In this work, we use photoluminescence (PL) imaging to characterize CdTe grain boundary recombination. We use a silicon megapixel camera and green (532 nm) laser diodes for excitation. A microscope objective lens system is used for high spatial resolution and a field of view down to 190 um x 190 um. PL images of large-grain (5 to 50 um) CdTe samples show grain boundary and grain interior features that vary with processing conditions. PL images of samples in the as-deposited state show distinct dark grain boundaries that suggest high excess carrier recombination. A CdCl2 treatment leads to PL images with very little distinction at the grain boundaries, which illustrates the grain boundary passivation properties. Other process conditions are also shown, along with comparisons of PL images to high spatial resolution time-resolved PL carrier lifetime maps.

  18. Photoluminescence studies of type-II CdSe/CdTe superlattices

    SciTech Connect

    Li Jingjing; Johnson, Shane R.; Wang Shumin; Ding Ding; Ning Cunzheng; Zhang Yonghang; Yin Leijun; Skromme, B. J.; Liu Xinyu; Furdyna, Jacek K.

    2012-08-06

    CdSe/CdTe type-II superlattices grown on GaSb substrates by molecular beam epitaxy are studied using time-resolved and steady-state photoluminescence (PL) spectroscopy at 10 K. The relatively long carrier lifetime of 188 ns observed in time-resolved PL measurements shows good material quality. The steady-state PL peak position exhibits a blue shift with increasing excess carrier concentration. Self-consistent solutions of the Schroedinger and Poisson equations show that this effect can be explained by band bending as a result of the spatial separation of electrons and holes, which is critical confirmation of a strong type-II band edge alignment between CdSe and CdTe.

  19. Electronic tuning of the transport properties of off-stoichiometric Pb{sub x}Sn{sub 1−x}Te thermoelectric alloys by Bi{sub 2}Te{sub 3} doping

    SciTech Connect

    Guttmann, Gilad M.; Dadon, David; Gelbstein, Yaniv

    2015-08-14

    The recent energy demands affected by the dilution of conventional energy resources and the growing awareness of environmental considerations had motivated many researchers to seek for novel renewable energy conversion methods. Thermoelectric direct conversion of thermal into electrical energies is such a method, in which common compositions include IV-VI semiconducting compounds (e.g., PbTe and SnTe) and their alloys. For approaching practical thermoelectric devices, the current research is focused on electronic optimization of off-stoichiometric p-type Pb{sub x}Sn{sub 1−x}Te alloys by tuning of Bi{sub 2}Te{sub 3} doping and/or SnTe alloying levels, while avoiding the less mechanically favorable Na dopant. It was shown that upon such doping/alloying, higher ZTs, compared to those of previously reported undoped Pb{sub 0.5}Sn{sub 0.5}Te alloy, were obtained at temperatures lower than 210–340 °C, depending of the exact doping/alloying level. It was demonstrated that upon optimal grading of the carrier concentration, a maximal thermoelectric efficiency enhancement of ∼38%, compared to that of an undoped material, is expected.

  20. Rare-earth-rich tellurides: Gd{sub 4}NiTe{sub 2} and Er{sub 5}M{sub 2}Te{sub 2} (M=Co, Ni)

    SciTech Connect

    Magliocchi, Carmela; Meng, Fanqin; Hughbanks, Timothy . E-mail: trh@mail.chem.tamu.edu

    2004-11-01

    Three new rare earth metal-rich compounds, Gd{sub 4}NiTe{sub 2}, and Er{sub 5}M{sub 2}Te{sub 2} (M=Ni, Co), were synthesized in direct reactions using R, R{sub 3}M, and R{sub 2}Te{sub 3} (R=Gd, Er; M=Co, Ni) and single-crystal structures were determined. Gd{sub 4}NiTe{sub 2} is orthorhombic and crystallizes in space group Pnma with four formula units per cell. Lattice parameters at 110(2)K are a=15.548(9), b=4.113(2), c=11.7521(15)A. Er{sub 5}Ni{sub 2}Te{sub 2} and Er{sub 5}Co{sub 2}Te{sub 2} are isostructural and crystallize in the orthorhombic space group Cmcm with two formula units per cell. Lattice parameters at 110(2)K are a=3.934(1), b=14.811(4), c=14.709(4)A, and a=3.898(1), b=14.920(3), c=14.889(3)A, respectively. Metal-metal bonding correlations were analyzed using the empirical Pauling bond order concept.

  1. Thin Metal Oxide Films to Modify a Window Layer in CdTe-Based Solar Cells for Improved Performance

    SciTech Connect

    Lemmon, John P.; Polikarpov, Evgueni; Bennett, Wendy D.; Kovarik, Libor

    2012-05-25

    We report on CdS/CdTe photovoltaic devices that contain a thin Ta₂O₅ film deposited onto the CdS window layer by sputtering. We show that for thicknesses below 5 nm, Ta₂O₅ films between CdS and CdTe positively affect the solar cell performance, improving JSC, VOC, and the cell power conversion efficiency despite the insulating nature of the interlayer material. Using the Ta₂O₅ interlayer, a VOC gain of over 100 mV was demonstrated compared to a CdTe/CdS baseline. Application of a 1nm Ta₂O₅ interlayer enabled the fabrication of CdTe solar cells with extremely thin (less than 30 nm) CdS window layers. The efficiency of these cells exceeded that of a base line cell with 95 nm of CdS.

  2. Modeling Cu Migration in CdTe Solar Cells Under Device-Processing and Long-Term Stability Conditions: Preprint

    SciTech Connect

    Teeter, G.; Asher, S.

    2008-05-01

    An impurity migration model for systems with material interfaces is applied to Cu migration in CdTe solar cells. In the model, diffusion fluxes are calculated from the Cu chemical potential gradient. Inputs to the model include Cu diffusivities, solubilities, and segregation enthalpies in CdTe, CdS and contact materials. The model yields transient and equilibrium Cu distributions in CdTe devices during device processing and under field-deployed conditions. Preliminary results for Cu migration in CdTe photovoltaic devices using available diffusivity and solubility data from the literature show that Cu segregates in the CdS, a phenomenon that is commonly observed in devices after back-contact processing and/or stress conditions.

  3. Polarization of Bi{sub 2}Te{sub 3} thin film in a floating-gate capacitor structure

    SciTech Connect

    Yuan, Hui E-mail: qli6@gmu.edu; Li, Haitao; Zhu, Hao; Zhang, Kai; Baumgart, Helmut; Bonevich, John E.; Richter, Curt A.; Li, Qiliang E-mail: qli6@gmu.edu

    2014-12-08

    Metal-Oxide-Semiconductor (MOS) capacitors with Bi{sub 2}Te{sub 3} thin film sandwiched and embedded inside the oxide layer have been fabricated and studied. The capacitors exhibit ferroelectric-like hysteresis which is a result of the robust, reversible polarization of the Bi{sub 2}Te{sub 3} thin film while the gate voltage sweeps. The temperature-dependent capacitance measurement indicates that the activation energy is about 0.33?eV for separating the electron and hole pairs in the bulk of Bi{sub 2}Te{sub 3}, and driving them to either the top or bottom surface of the thin film. Because of the fast polarization speed, potentially excellent endurance, and the complementary metaloxidesemiconductor compatibility, the Bi{sub 2}Te{sub 3} embedded MOS structures are very interesting for memory application.

  4. CdSe/CdTe type-II superlattices grown on GaSb (001) substrates by molecular beam epitaxy

    SciTech Connect

    Li Jingjing; Liu Shi; Wang Shumin; Ding Ding; Johnson, Shane R.; Zhang Yonghang; Liu Xinyu; Furdyna, Jacek K.; Smith, David J.

    2012-03-19

    CdSe/CdTe superlattices are grown on GaSb substrates using molecular beam epitaxy. X-ray diffraction measurements and cross-sectional transmission electron microscopy images indicate high crystalline quality. Photoluminescence (PL) measurements show the effective bandgap varies with the superlattice layer thicknesses and confirm the CdSe/CdTe heterostructure has a type-II band edge alignment. The valence band offset between unstrained CdTe and CdSe is determined as 0.63 {+-} 0.06 eV by fitting the measured PL peak positions using the envelope function approximation and the Kronig-Penney model. These results suggest that CdSe/CdTe superlattices are promising candidates for multi-junction solar cells and other optoelectronic devices based on GaSb substrates.

  5. Search for quark compositeness in dijet angular distributions from pp collisions at sqrt(s) = 7 TeV

    SciTech Connect

    Chatrchyan, Serguei; et al.

    2012-05-01

    A search for quark compositeness using dijet angular distributions from pp collisions at sqrt(s) = 7 TeV is presented. The search has been carried out using a data sample corresponding to an integrated luminosity of 2.2 inverse femtobarns, recorded by the CMS experiment at the LHC. Normalized dijet angular distributions have been measured for dijet invariant masses from 0.4 TeV to above 3 TeV and compared with a variety of contact interaction models, including those which take into account the effects of next-to-leading-order QCD corrections. The data are found to be in agreement with the predictions of perturbative QCD, and lower limits are obtained on the contact interaction scale, ranging from 7.5 up to 14.5 TeV at 95% confidence level.

  6. The effects of deep level traps on the electrical properties of semi-insulating CdZnTe

    SciTech Connect

    Zha, Gangqiang; Yang, Jian; Xu, Lingyan; Feng, Tao; Wang, Ning; Jie, Wanqi

    2014-01-28

    Deep level traps have considerable effects on the electrical properties and radiation detection performance of high resistivity CdZnTe. A deep-trap model for high resistivity CdZnTe was proposed in this paper. The high resistivity mechanism and the electrical properties were analyzed based on this model. High resistivity CdZnTe with high trap ionization energy E{sub t} can withstand high bias voltages. The leakage current is dependent on both the deep traps and the shallow impurities. The performance of a CdZnTe radiation detector will deteriorate at low temperatures, and the way in which sub-bandgap light excitation could improve the low temperature performance can be explained using the deep trap model.

  7. The tin impurity in Bi0.5Sb1.5Te3 alloys | Department of Energy

    Energy.gov [DOE] (indexed site)

    Extends work on tin to p-type thermoelectric alloys of formula Bi(2-x)Sb(x)Te(3) doped ... More Documents & Publications Resonant Level Enhancement of the Thermoelectric Power of ...

  8. Characterization of silver photodiffusion in Ge{sub 8}Sb{sub 2}Te{sub 11} thin films

    SciTech Connect

    Kumar, Sandeep; Singh, D.; Sandhu, S.; Thangaraj, R.

    2015-06-24

    Silver-doped amorphous Ge{sub 8}Sb{sub 2}Te{sub 11} thin films have been prepared by photodiffusion at room-temperature; the Ge{sub 8}Sb{sub 2}Te{sub 11}/Ag bilayer was deposited by vacuum thermal evaporation. Photodiffusion of Ag into the amorphous Ge{sub 8}Sb{sub 2}Te{sub 11} thin films has been carried out by illuminating the prepared Ge{sub 8}Sb{sub 2}Te{sub 11}/Ag bilayer with halogen lamp. The photodiffused silver depth profile was traced by means of time of flight secondary ion mass spectroscopy. The film remains amorphous after Ag photodiffusion. The crystallization temperature of the films was evaluated by temperature dependent sheet resistance measurement. The amorphous nature and crystalline phases of the films have been identified by using X-ray diffraction.

  9. One-Dimensional Reaction-Diffusion Simulation of Cu Migration in Polycrystalline CdTe Solar Cells

    SciTech Connect

    Guo, Da; Akis, Richard; Brinkman, Daniel; Sankin, Igor; Fang, Tian; Vasileska, Dragica; Ringhofer, Christain

    2014-06-13

    In this work, we report on developing 1D reaction-diffusion solver to understand the kinetics of p-type doping formation in CdTe absorbers and to shine some light on underlying causes of metastabilities observed in CdTe PV devices. Evolution of intrinsic and Cu-related defects in CdTe solar cell has been studied in time-space domain self-consistently with free carrier transport and Poisson equation. Resulting device performance was simulated as a function of Cu diffusion anneal time showing pronounced effect the evolution of associated acceptor and donor states can cause on device characteristics. Although 1D simulation has intrinsic limitations when applied to poly-crystalline films, the results suggest strong potential of the approach in better understanding of the performance and metastabilities of CdTe photovoltaic device.

  10. Expanding the Limits of CdTe PV Performance: Phase I Annual Report, 7 February 2006 - 30 June 2007

    SciTech Connect

    Meyers, P.

    2007-12-01

    First Solar made 9 CdTe PV devices; found two front- and one back-side structures that show improved Jsc and Voc, respectively, compared to base device structure; best cell efficiency was 14.13%.

  11. Background limited mid-infrared photodetection with photovoltaic HgTe colloidal quantum dots

    SciTech Connect

    Guyot-Sionnest, Philippe Roberts, John Andris

    2015-12-21

    The photovoltaic response of thin films of HgTe colloidal quantum dots in the 3–5 μm range is observed. With no applied bias, internal quantum efficiency exceeding 40%, specific detectivity above 10{sup 10} Jones and microseconds response times are obtained at 140 K. The cooled devices detect the ambient thermal radiation. A detector with 5.25 μm cut-off achieves Background Limited Infrared Photodetection at 90 K.

  12. Dijet Azimuthal Decorrelations in pp Collisions at sqrt(s) = 7 TeV

    SciTech Connect

    Khachatryan, Vardan; et al.

    2011-03-01

    Measurements of dijet azimuthal decorrelations in pp collisions at sqrt(s) = 7 TeV using the CMS detector at the CERN LHC are presented. The analysis is based on an inclusive dijet event sample corresponding to an integrated luminosity of 2.9 inverse picobarns. The results are compared to predictions from perturbative QCD calculations and various Monte Carlo event generators. The dijet azimuthal distributions are found to be sensitive to initial-state gluon radiation.

  13. New acceptor centers of the background impurities in p-CdZnTe

    SciTech Connect

    Plyatsko, S. V. Rashkovetskyi, L. V.

    2013-07-15

    Low-temperature photoluminescence data are used to study the redistribution of the background impurities and host components of p-CdZnTe single crystals with a resistivity of 1-50 {Omega} cm upon their interaction with infrared laser radiation. The effect of widening of the band gap and the formation of new acceptor centers in response to laser-stimulated changes in the system of intrinsic defects are established. The activation energy of the new acceptor centers is determined.

  14. CdTe X-ray detectors under strong optical irradiation

    SciTech Connect

    Cola, Adriano; Farella, Isabella

    2014-11-17

    The perturbation behaviour of Ohmic and Schottky CdTe detectors under strong optical pulses is investigated. To this scope, the electric field profiles and the induced charge transients are measured, thus simultaneously addressing fixed and free charges properties, interrelated by one-carrier trapping. The results elucidate the different roles of the contacts and deep levels, both under dark and strong irradiation conditions, and pave the way for the improvement of detector performance control under high X-ray fluxes.

  15. Exploring Higgs Compositeness Mechanism in the Era of the 14 TeV LHC |

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Argonne Leadership Computing Facility Exploring Higgs Compositeness Mechanism in the Era of the 14 TeV LHC PI Name: George Fleming PI Email: george.fleming@yale.edu Institution: Yale University Allocation Program: ALCC Allocation Hours at ALCF: 55 Million Year: 2016 Research Domain: Physics A primary goal of physics is to describe the universe through its most fundamental forces and particles. The current culmination of this goal, The Standard Model, has withstood ~40 years of rigorous

  16. Quantum oscillations in magnetothermopower measurements of topological insulator Bi2Te3

    DOE PAGES [OSTI]

    Qu, Dong -Xia; Hor, Y. S.; Cava, R. J.

    2012-12-10

    We report the magnetothermopower measurements of the nonmetallic topological insulator Bi2Te3 in magnetic fields up to 35 T. Quantum oscillations arising from surface states are observed in both thermoelectric and conductivity tensors. The inferred surface thermopower has a peak magnitude ~1 mV/K possibly as a result of surface electron and bulk phonon interaction. At the n = 1 Landau level, we resolve additional quantum oscillations signaling Landau sublevels.

  17. Beauty production cross section measurements at E(cm) = 1.96-TeV

    SciTech Connect

    D'Onofrio, Monica; /Geneva U.

    2005-05-01

    The RunII physics program at the Tevatron started in spring 2001 with protons and antiprotons colliding at an energy of {radical}s = 1.96 TeV, and it is carrying on with more than 500 pb{sup -1} of data as collected by both the CDF and D0 experiments. Recent results on beauty production cross section measurements are here reported.

  18. Theoretical Studies of TE-Wave Propagation as a Diagnostic for Electron Cloud

    SciTech Connect

    Penn, Gregory E; Vay, Jean-Luc

    2010-05-17

    The propagation of TE waves is sensitive to the presence of an electron cloud primarily through phase shifts generated by the altered dielectric function, but can also lead to polarization changes and other effects, especially in the presence of magnetic fields. These effects are studied theoretically and also through simulations using WARP. Examples are shown related to CesrTA parameters, and used to observe different regimes of operation as well as to validate estimates of the phase shift.

  19. Search for new particles decaying to diject in 7 TeV proton-proton collisions at CMS

    SciTech Connect

    Ozturk, Sertac; /Cukurova U.

    2011-03-01

    This thesis presents a measurement of the dijet invariant mass spectrum and search for new particles decaying to dijets at CMS in 7 TeV pp collisions using data corresponding to an integrated luminosity of 2.875 pb{sup -1}. The measured dijet mass distribution is compared to QCD prediction from PYTHIA . It is required the pseudorapidity separation of the two jets to satisfy |Dh| < 1.3 with each jet inside the region of |{eta}| < 2.5. The observed dijet mass spectrum is fitted by a smooth function to search for dijet resonances. Since there is no evidence for dijet resonances, the upper limits at 95% Confidence Level (C.L.) on the resonance cross section are set. These generic cross section limits are compared with theoretical predictions for the cross section for several models of new particles: string resonances, axigluons, colorons, excited quarks, E{sub 6} diquarks, Randall-Sundrum gravitons, W' and Z'. It is excluded at 95% C.L. string resonances in the mass range 0.50 < M(S) < 2.50 TeV, excited quarks in the mass range 0.50 < M(q*) < 1.58 TeV, axigluons and colorons in the mass ranges 0.50 < M(A) < 1.17 TeV and 1.47 < M(A) < 1.52 TeV, and E{sub 6} diquarks in the mass ranges 0.50 < M(D) < 0.58 TeV, 0.97 < M(D) < 1.08 TeV, and 1.45 < M(D) < 1.60 TeV. These exclusions extend previously published limits on all models.

  20. Searching for Neutrinoless Double-Beta Decay of130Te with CUORE

    DOE PAGES [OSTI]

    Artusa, D. R.; Avignone, F. T.; Azzolini, O.; Balata, M.; Banks, T. I.; Bari, G.; Beeman, J.; Bellini, F.; Bersani, A.; Biassoni, M.; et al

    2015-01-01

    Neutrinoless double-beta (0???) decay is a hypothesized lepton-number-violating process that offers the only known means of asserting the possible Majorana nature of neutrino mass. The Cryogenic Underground Observatory for Rare Events (CUORE) is an upcoming experiment designed to search for 0???decay of130Te using an array of 988 TeO2crystal bolometers operated at 10?mK. The detector will contain 206?kg of130Te and have an average energy resolution of 5?keV; the projected 0???decay half-life sensitivity after five years of livetime is 1.6??1026?y at 1?(9.5??1025?y at the 90% confidence level), which corresponds to an upper limit on the effective Majorana massmorein the range 40100?meV (50130?meV). In this paper, we review the experimental techniques used in CUORE as well as its current status and anticipated physics reach.less

  1. Thin Film CIGS and CdTe Photovoltaic Technologies: Commercialization, Critical Issues, and Applications; Preprint

    SciTech Connect

    Ullal, H. S.; von Roedern, B.

    2007-09-01

    We report here on the major commercialization aspects of thin-film photovoltaic (PV) technologies based on CIGS and CdTe (a-Si and thin-Si are also reported for completeness on the status of thin-film PV). Worldwide silicon (Si) based PV technologies continues to dominate at more than 94% of the market share, with the share of thin-film PV at less than 6%. However, the market share for thin-film PV in the United States continues to grow rapidly over the past several years and in CY 2006, they had a substantial contribution of about 44%, compared to less than 10% in CY 2003. In CY 2007, thin-film PV market share is expected to surpass that of Si technology in the United States. Worldwide estimated projections for CY 2010 are that thin-film PV production capacity will be more than 3700 MW. A 40-MW thin-film CdTe solar field is currently being installed in Saxony, Germany, and will be completed in early CY 2009. The total project cost is Euro 130 million, which equates to an installed PV system price of Euro 3.25/-watt averaged over the entire solar project. This is the lowest price for any installed PV system in the world today. Critical research, development, and technology issues for thin-film CIGS and CdTe are also elucidated in this paper.

  2. Search for Neutrinoless Double-Beta Decay of Te130 with CUORE-0

    DOE PAGES [OSTI]

    Alfonso, K.; Artusa, D. R.; Avignone, F. T.; Azzolini, O.; Balata, M.; Banks, T. I.; Bari, G.; Beeman, J. W.; Bellini, F.; Bersani, A.; et al

    2015-09-03

    We report the results of a search for neutrinoless double-beta decay in a 9.8 kg yr exposure of 130Te using a bolometric detector array, CUORE-0. The characteristic detector energy resolution and background level in the region of interest are 5:1± 0:3 keV FWHM and 0:058 ± 0:004 (stat) ± 0:002 (syst) counts / (keV kg yr), respectively. The median 90% C.L. lower-limit half-life sensitivity of the experiment is 2:9x1024 yr and surpasses the sensitivity of previous searches. We find no evidence for neutrinoless double-beta decay of 130Te and place a Bayesian lower bound on the decay half-life, T0ν1/2 > 2.7more » x 1024 yr at 90% C.L. Combining CUORE-0 data with the 19.75 kg yr exposure of 130Te from the Cuoricino experiment we obtain T0ν1/2 > 4.0 x 1024 yr at 90% C.L. (Bayesian), the most stringent limit to date on this half-life. Lastly, using a range of nuclear matrix element estimates we interpret this as a limit on the e ective Majorana neutrino mass, mββ < 270 -760 meV.« less

  3. High-efficiency, flexible CdTe solar cells on ultra-thin glass substrates

    SciTech Connect

    Mahabaduge, H. P.; Rance, W. L.; Burst, J. M.; Reese, M. O.; Gessert, T. A.; Metzger, W. K.; Barnes, T. M.; Meysing, D. M.; Wolden, C. A.; Li, J.; Beach, J. D.; Garner, S.

    2015-03-30

    Flexible, high-efficiency, low-cost solar cells can enable applications that take advantage of high specific power, flexible form factors, lower installation and transportation costs. Here, we report a certified record efficiency of 16.4% for a flexible CdTe solar cell that is a marked improvement over the previous standard (14.05%). The improvement was achieved by replacing chemical-bath-deposited CdS with sputtered CdS:O and also replacing the high-temperature sputtered ZnTe:Cu back contact layer with co-evaporated and rapidly annealed ZnTe:Cu. We use quantum efficiency and capacitance-voltage measurements combined with device simulations to identify the reasons for the increase in efficiency. Both device simulations and experimental results show that higher carrier density can quantitatively account for the increased open circuit voltage (V{sub OC}) and Fill Factor (FF), and likewise, the increase in short circuit current density (J{sub SC}) can be attributed to the more transparent CdS:O.

  4. Searching for Neutrinoless Double-Beta Decay of 130 Te with CUORE

    DOE PAGES [OSTI]

    Artusa, D. R.; Avignone, F. T.; Azzolini, O.; Balata, M.; Banks, T. I.; Bari, G.; Beeman, J.; Bellini, F.; Bersani, A.; Biassoni, M.; et al

    2015-01-01

    Neumore » trinoless double-beta (0 ν β β ) decay is a hypothesized lepton-number-violating process that offers the only known means of asserting the possible Majorana nature of neutrino mass. The Cryogenic Underground Observatory for Rare Events (CUORE) is an upcoming experiment designed to search for 0 ν β β decay of 130 Te using an array of 988 TeO 2 crystal bolometers operated at 10 mK. The detector will contain 206 kg of 130 Te and have an average energy resolution of 5 keV; the projected 0 ν β β decay half-life sensitivity after five years of livetime is 1.6 × 10 26  y at 1 σ (9.5 × 10 25  y at the 90% confidence level), which corresponds to an upper limit on the effective Majorana mass in the range 40–100 meV (50–130 meV). In this paper, we review the experimental techniques used in CUORE as well as its current status and anticipated physics reach.« less

  5. Vacancy structures and melting behavior in rock-salt GeSbTe

    DOE PAGES [OSTI]

    Zhang, Bin; Wang, Xue -Peng; Shen, Zhen -Ju; Li, Xian -Bin; Wang, Chuan -Shou; Chen, Yong -Jin; Li, Ji -Xue; Zhang, Jin -Xing; Zhang, Ze; Zhang, Sheng -Bai; et al

    2016-05-03

    Ge-Sb-Te alloys have been widely used in optical/electrical memory storage. Because of the extremely fast crystalline-amorphous transition, they are also expected to play a vital role in next generation nonvolatile microelectronic memory devices. However, the distribution and structural properties of vacancies have been one of the key issues in determining the speed of melting (or amorphization), phase-stability, and heat-dissipation of rock-salt GeSbTe, which is crucial for its technological breakthrough in memory devices. Using spherical aberration-aberration corrected scanning transmission electron microscopy and atomic scale energy-dispersive X-ray mapping, we observe a new rock-salt structure with high-degree vacancy ordering (or layered-like ordering) atmore » an elevated temperature, which is a result of phase transition from the rock-salt phase with randomly distributed vacancies. First-principles calculations reveal that the phase transition is an energetically favored process. Furthermore, molecular dynamics studies suggest that the melting of the cubic rock-salt phases is initiated at the vacancies, which propagate to nearby regions. The observation of multi-rock-salt phases suggests another route for multi-level data storage using GeSbTe.« less

  6. Beam extraction from TeV accelerators using channeling in bent crystals

    SciTech Connect

    Carrigan, R.A. Jr.; Toohig, T.E.; Tsyganov, E.N.; Superconducting Super Collider Lab., Dallas, TX; Joint Inst. for Nuclear Research, Dubna )

    1989-08-01

    Bent crystal channeling offers an interesting alternative for beam extraction from trans-GeV accelerators. Conventional extraction employs resonant beam blow-up coupled with electromagnetic beam deflecting channels. It is limited by the length of the available accelerator straight section. Channeling crystals require much less space. A five-step approach to applying crystal extraction in the Superconducting Super Collider (SSC) is discussed. Two steps, extraction from the 8 GeV Dubna Synchrophasotron and the 76 GeV Serpukhov accelerator, have occurred. The next possibility is extraction from a multi-hundred GeV superconducting accelerator. In the nineties the program could continue at UNK (3 TeV) and culminate at the TeV SSC. The possibilities and limitations of crystal extraction are reviewed. More information is needed on dechanneling in bent crystals including the effects of dislocations at TeV energies. Long, dislocation-free'' crystals are required. A more thorough understanding of the theory of crystal extraction is also desirable. 12 refs.

  7. Superconductivity and charge density wave in ZrTe3–xSex

    DOE PAGES [OSTI]

    Zhu, Xiangde; Ning, Wei; Li, Lijun; Ling, Langsheng; Zhang, Ranran; Zhang, Jinglei; Wang, Kefeng; Liu, Yu; Pi, Li; Ma, Yongchang; et al

    2016-06-02

    Charge density wave (CDW), the periodic modulation of the electronic charge density, will open a gap on the Fermi surface that commonly leads to decreased or vanishing conductivity. On the other hand superconductivity, a commonly believed competing order, features a Fermi surface gap that results in infinite conductivity. Here we report that superconductivity emerges upon Se doping in CDW conductor ZrTe3 when the long range CDW order is gradually suppressed. Superconducting critical temperature Tc(x) in ZrTe3–xSex (0 ≤ x ≤ 0.1) increases up to 4 K plateau for 0.04 ≤ x ≤ 0.07. Further increase in Se content results inmore » diminishing Tc and filametary superconductivity. The CDW modes from Raman spectra are observed in x = 0.04 and 0.1 crystals, where signature of ZrTe3 CDW order in resistivity vanishes. As a result, the electronic-scattering for high Tc crystals is dominated by local CDW fluctuations at high temperatures, the resistivity is linear up to highest measured T = 300 K and contributes to substantial in-plane anisotropy.« less

  8. Synthesis of CdSe/ZnS and CdTe/ZnS Quantum Dots: Refined Digestive Ripening

    DOE PAGES [OSTI]

    Cingarapu, Sreeram; Yang, Zhiqiang; Sorensen, Christopher M.; Klabunde, Kenneth J.

    2012-01-01

    We report synthesis of CdSe and CdTe quantum dots (QDs) from the bulk CdSe and CdTe material by evaporation/co-condensation using the solvated metal atom dispersion (SMAD) technique and refined digestive ripening. The outcomes of this new process are (1) the reduction of digestive ripening time by employing ligands (trioctylphosphine oxide (TOPO) and oleylamine (OA)) as capping agent as well as digestive ripening solvent, (2) ability to tune the photoluminescence (PL) from 410 nm to 670 nm, (3) demonstrate the ability of SMAD synthesis technique for other semiconductors (CdTe), (4) direct comparison of CdSe QDs growth with CdTe QDs growth based on digestivemore » ripening times, and (5) enhanced PL quantum yield (QY) of CdSe QDs and CdTe QDs upon covering with a ZnS shell. Further, the merit of this synthesis is the use of bulk CdSe and CdTe as the starting materials, which avoids usage of toxic organometallic compounds, eliminates the hot injection procedure, and size selective precipitation processes. It also allows the possibility of scale up. These QDs were characterized by UV-vis, photoluminescence (PL), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), and powder XRD.« less

  9. Multiwavelength study of the northeastern outskirts of the extended TeV source HESS J1809193

    SciTech Connect

    Rangelov, Blagoy; Kargaltsev, Oleg; Hare, Jeremy; Volkov, Igor; Posselt, Bettina; Pavlov, George G.

    2014-11-20

    HESS J1809193 is an extended TeV ?-ray source in the Galactic plane. Multiwavelength observations of the HESS J1809193 field reveal a complex picture. We present results from three Chandra X-Ray Observatory and two Suzaku observations of a region in the northeastern outskirts of HESS J1809-193, where enhanced TeV emission has been reported. Our analysis also includes GeV ?-ray and radio data. One of the X-ray sources in the field is the X-ray binary XTE J1810-189, for which we present the outburst history from multiple observatories and confirm that XTE J1810-189 is a strongly variable type I X-ray burster, which can hardly produce TeV emission. We investigate whether there is any connection between the possible TeV extension of HESS J1809193 and the sources seen at lower energies. We find that another X-ray binary candidate, Suzaku J1811-1900, and a radio supernova remnant, SNR G11.40.1, can hardly be responsible for the putative TeV emission. Our multiwavelength classification of fainter X-ray point sources also does not produce a plausible candidate. We conclude that the northeast extension of HESS J1809193, if confirmed by deeper observations, can be considered a dark acceleratora TeV source without a visible counterpart at lower energies.

  10. Strong anisotropy and magnetostriction in the two-dimensional Stoner ferromagnet Fe3GeTe2

    DOE PAGES [OSTI]

    Zhuang, Houlong L.; Kent, P. R. C.; Hennig, Richard G.

    2016-04-06

    Comore » mputationally characterizing magnetic properies of novel two-dimensional (2D) materials serves as an important first step of exploring possible applications. Using density-functional theory, we show that single-layer Fe3GeTe2 is a potential 2D material with sufficiently low formation energy to be synthesized by mechanical exfoliation from the bulk phase with a van der Waals layered structure. In addition, we calculated the phonon dispersion demonstrating that single-layer Fe3GeTe2is dynamically stable. Furthermore, we find that similar to the bulk phase, 2D Fe3GeTe2 exhibits amagnetic moment that originates from a Stoner instability. In contrast to other 2D materials, we find that single-layer Fe3GeTe2 exhibits a significant uniaxial magnetocrystalline anisotropy energy of 920μ eV per Fe atom originating from spin-orbit coupling. In conclusion, we show that applying biaxial tensile strains enhances the anisotropy energy, which reveals strong magnetostriction in single-layer Fe3GeTe2 with a sizable magneostrictive coefficient. Our results indicate that single-layer Fe3GeTe2 is potentially useful for magnetic storage applications.« less

  11. Ultrathin nanosheets of CrSiTe3. A semiconducting two-dimensional ferromagnetic material

    SciTech Connect

    Lin, Ming -Wei; Zhung, Houlong L.; Yan, Jiaqiang; Ward, Thomas Zac; Puretzky, Alexander A.; Rouleau, Christopher M.; Gai, Zheng; Liang, Liangbo; Meunier, Vincent; Ganesh, Panchapakesan; Kent, Paul R. C.; Sumpter, Bobby G.; Mandrus, David G.; Geohegan, David B.; Xiao, Kai

    2015-11-27

    Finite range ferromagnetism and antiferromagnetism in two-dimensional (2D) systems within an isotropic Heisenberg model at non-zero temperature were originally proposed to be impossible. However, recent theoretical studies using an Ising model have recently shown that 2D magnetic crystals can exhibit magnetism. Experimental verification of existing 2D magnetic crystals in this system has remained elusive. In this work we for the first time exfoliate the CrSiTe3, a bulk ferromagnetic semiconductor, to mono- and few-layer 2D crystals onto a Si/SiO2 substrate. The Raman spectra show the good stability and high quality of the exfoliated flakes, consistent with the computed phonon spectra of 2D CrSiTe3, giving a strong evidence for the existence of 2D CrSiTe3 crystals. When the thickness of the CrSiTe3 crystals is reduced to few-layers, we observed a clear change in resistivity at 80~120 K, consistent with the theoretical calculations on the Curie temperature (Tc) of ~80 K for the magnetic ordering of 2D CrSiTe3 crystals. As a result, the ferromagnetic mono- and few-layer 2D CrSiTe3 indicated here should enable numerous applications in nano-spintronics.

  12. Sloan Digital Sky Survey III (SDSS-III), Data Release 9, including the Baryon Oscillation Spectroscopic Survey (BOSS)

    DOE Data Explorer

    The Third Sloan Digital Sky Survey (SDSS-III) has issued Data Release 9 (DR9), the first public release of data from the Baryon Oscillation Spectroscopic Survey (BOSS). In this release BOSS, the largest of SDSS-III’s four surveys, provides spectra for 535,995 newly observed galaxies, 102,100 quasars, and 116,474 stars, plus new information about objects in previous Sloan surveys (SDSS-I and II). Spectroscopy yields a wealth of information about astronomical objects including their motion (called redshift and written z), their composition, and sometimes also the density of the gas and other material that lies between them and observers on Earth. The new release lists spectra for galaxies with redshifts up to z = 0.8 (roughly 7 billion light years away) and quasars with redshifts between z = 2.1 and 3.5 (from 10 to 11.5 billion light years away). When BOSS is complete it will have measured 1.5 million galaxies and at least 150,000 quasars, as well as many thousands of stars and other ancillary objects for scientific projects other than BOSS’s main goal. [extracts copied from LBL news release of August 8, 2012

  13. Topological crystalline insulator Pb{sub x}Sn{sub 1-x}Te thin films on SrTiO{sub 3} (001) with tunable Fermi levels

    SciTech Connect

    Guo, Hua; Liu, Jun-Wei; Wang, Zhen-Yu; Wu, Rui; Ji, Shuai-Hua; Duan, Wen-Hui; Chen, Xi Xue, Qi-Kun; Yan, Chen-Hui; Zhang, Zhi-Dong; Wang, Li-Li; He, Ke; Ma, Xu-Cun

    2014-05-01

    In this letter, we report a systematic study of topological crystalline insulator Pb{sub x}Sn{sub 1-x}Te (0 < x < 1) thin films grown by molecular beam epitaxy on SrTiO{sub 3}(001). Two domains of Pb{sub x}Sn{sub 1-x}Te thin films with intersecting angle of ? ? 45 were confirmed by reflection high energy diffraction, scanning tunneling microscopy, and angle-resolved photoemission spectroscopy (ARPES). ARPES study of Pb{sub x}Sn{sub 1-x}Te thin films demonstrated that the Fermi level of PbTe could be tuned by altering the temperature of substrate whereas SnTe cannot. An M-shaped valance band structure was observed only in SnTe but PbTe is in a topological trivial state with a large gap. In addition, co-evaporation of SnTe and PbTe results in an equivalent variation of Pb concentration as well as the Fermi level of Pb{sub x}Sn{sub 1-x}Te thin films.

  14. Search for resonances and quantum black holes using dijet mass spectra in proton-proton collisions at sqrt(s)=8 TeV

    SciTech Connect

    Khachatryan, V.; et al.,

    2015-03-01

    A search for resonances and quantum black holes is performed using the dijet mass spectra measured in proton-proton collisions at sqrt(s)=8 TeV with the CMS detector at the LHC. The data set corresponds to an integrated luminosity of 19.7 inverse femtobarns. In a search for narrow resonances that couple to quark-quark, quark-gluon, or gluon-gluon pairs, model-independent upper limits, at 95% confidence level, are obtained on the production cross section of resonances, with masses above 1.2 TeV. When interpreted in the context of specific models the limits exclude: string resonances with masses below 5.0 TeV; excited quarks below 3.5 TeV; scalar diquarks below 4.7 TeV; W' bosons below 1.9 TeV or between 2.0 and 2.2 TeV; Z' bosons below 1.7 TeV; and Randall-Sundrum gravitons below 1.6 TeV. A separate search is conducted for narrow resonances that decay to final states including b quarks. The first exclusion limit is set for excited b quarks, with a lower mass limit between 1.2 and 1.6 TeV depending on their decay properties. Searches are also carried out for wide resonances, assuming for the first time width-to-mass ratios up to 30%, and for quantum black holes with a range of model parameters. The wide resonance search excludes axigluons and colorons with mass below 3.6 TeV, and color-octet scalars with mass below 2.5 TeV. Lower bounds between 5.0 and 6.3 TeV are set on the masses of quantum black holes.

  15. Me-3,2-HOPO Complexes of Near Infra-Red (NIR) Emitting Lanthanides: Efficient Sensitization of Yb(III) and Nd(III) in Aqueous Solution

    SciTech Connect

    Moore, Evan G.; Xu, Jide; Dodani, Sheel; Jocher, Christoph; D'Aleo, Anthony; Seitz, Michael; Raymond, Kenneth

    2009-11-10

    The synthesis, X-ray structure, solution stability, and photophysical properties of several trivalent lanthanide complexes of Yb(III) and Nd(III) using both tetradentate and octadentate ligand design strategies and incorporating the 1-methyl-3-hydroxy-pyridin-2-one (Me-3,2-HOPO) chelate group are reported. Both the Yb(III) and Nd(III) complexes have emission bands in the Near Infra-Red (NIR) region, and this luminescence is retained in aqueous solution ({Phi}{sub tot}{sup Yb} {approx} 0.09-0.22%). Furthermore, the complexes demonstrate very high stability (pYb {approx} 18.8-21.9) in aqueous solution, making them good candidates for further development as probes for NIR imaging. Analysis of the low temperature (77 K) photophysical measurements for a model Gd(III) complex were used to gain an insight into the electronic structure, and were found to agree well with corresponding TD-DFT calculations at the B3LYP/6-311G{sup ++}(d,p) level of theory for a simplified model monovalent sodium complex.

  16. Nanostructured rocksalt-type solid solution series (Ge{sub 1−x}Sn{sub x}Te){sub n}Sb{sub 2}Te{sub 3} (n=4, 7, 12; 0≤x≤1): Thermal behavior and thermoelectric properties

    SciTech Connect

    Rosenthal, Tobias; Neudert, Lukas; Ganter, Pirmin; Boor, Johannes de; Stiewe, Christian; Oeckler, Oliver

    2014-07-01

    Solid solutions (Ge{sub 1−x}Sn{sub x}Te){sub n}Sb{sub 2}Te{sub 3} (n=4, 7, 12; 0≤x≤1) represent stable high-temperature phases and can be obtained as metastable compounds by quenching. High-resolution transmission electron microscopy reveals that the quenched (pseudo-)cubic materials exhibit parquet-like nanostructures comparable to, but especially for n=4 more pronounced than in (GeTe){sub n}Sb{sub 2}Te{sub 3} (GST materials). The temperature-dependent phase transitions are comparable; however, substitution with Sn significantly lowers the transition temperatures between cubic high-temperature phase and the long range ordered layered phases that are stable at ambient conditions. In addition, the metrics of the quenched Sn-containing materials remains closer to cubic, especially for samples with n=7 or 12. For samples with high defect concentrations (n=4, 7), Sn-substituted samples exhibit electrical conductivities up to 3 times higher than those of corresponding GST materials. Since the difference in thermal conductivity is much less pronounced, this results in a doubling of the thermoelectric figure of merit (ZT) at high temperatures for (Ge{sub 0.5}Sn{sub 0.5}Te){sub 4}Sb{sub 2}Te{sub 3} as compared to (GeTe){sub 4}Sb{sub 2}Te{sub 3}. Sn doping in (GeTe){sub 7}Sb{sub 2}Te{sub 3} increases the ZT value by a factor of up to 4 which is also due to an increased Seebeck coefficient. - Graphical abstract: High-resolution transmission electron micrographs of (GeTe){sub 4}Sb{sub 2}Te{sub 3} (top) and (Ge{sub 0.5}Sn{sub 0.5}Te){sub 4}Sb{sub 2}Te{sub 3} (bottom) with different nanostructures and thermoelectric figures of merit (ZT) of these samples. - Highlights: • Representative samples of solid solutions of (Ge{sub 1−x}Sn{sub x}Te){sub n}Sb{sub 2}Te{sub 3} were synthesized. • Sn substitution leads to more pronounced nanostructures in defect-rich compounds. • Phase transitions are comparable to (GeTe){sub n}Sb{sub 2}Te{sub 3} but occur at lower temperatures

  17. Structural peculiarities and Raman spectra of TeO{sub 2}/WO{sub 3}-based glasses: A fresh look at the problem

    SciTech Connect

    Mirgorodsky, Andreie; Colas, Maggy; Smirnov, Mikhael; Merle-Mejean, Therese; El-Mallawany, Raouf; Thomas, Philippe

    2012-06-15

    Ideas currently dominating the field of structural studies of TeO{sub 2}-based glasses are critically considered. A new physically and chemically consistent approach to the constitution of binary TeO{sub 2}-WO{sub 3} glasses is proposed, in which the reasoning coming from the Raman spectra reexamination are correlated with the basic principles of thermodynamics. Separation into two phases is suggested in such glasses. One phase is TeO{sub 2}, and another is Te(WO{sub 4}){sub 2} consisting of tetrahedral [WO{sub 4}]{sup 2-} anions and of Te{sup 4+} cations. Supplementary M{sub n}O{sub k} oxides added to the glasses are found incorporated in the former phase, thus producing solid solutions (for M=Ti, Nb) or tellurite compounds (for M=Nd). - Graphical abstract: Raman scattering spectra of TeO{sub 2}-based glasses with the following compositions (mol%): (a) pure TeO{sub 2}, (b) 85TeO{sub 2}-15WO{sub 3}, (c) 80TeO{sub 2}-15WO{sub 3}-5TiO{sub 2} ,(d) 80TeO{sub 2}-10WO{sub 3}-5TiO{sub 2}-5Nb{sub 2}O{sub 5}, (e) 80TeO{sub 2}-12WO{sub 3}-5TiO{sub 2}-3 Nd{sub 2}O{sub 3}, (f) 80TeO{sub 2}-10WO{sub 3}-5TiO{sub 2}-5Nd{sub 2}O{sub 3}. Highlights: Black-Right-Pointing-Pointer Structural studies of TeO{sub 2}-WO{sub 3} glasses are critically considered. Black-Right-Pointing-Pointer The oxide glass formation is analyzed from Raman spectra and thermodynamic principles. Black-Right-Pointing-Pointer Separation into two phases, TeO{sub 2} and Te(WO{sub 4}){sub 2}, is intrinsic in such glasses. Black-Right-Pointing-Pointer TiO{sub 2} or Nb{sub 2}O{sub 5} addition to TeO{sub 2}-WO{sub 3} glasses leads to produce solid solutions. Black-Right-Pointing-Pointer Nd{sub 2}O{sub 3} addition to TeO{sub 2}-WO{sub 3} glasses leads to produce a tellurite compound.

  18. WBU-15-0003 - In the Matter of Charles W. Trask III | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    3 - In the Matter of Charles W. Trask III WBU-15-0003 - In the Matter of Charles W. Trask III On April 2, 2015, the OHA issued a decision denying, due to lack of jurisdiction, an Appeal filed by Mr. Charles W. Trask III of the dismissal of his whistleblower complaint by the Whistleblower Program Manager for the Employee Concerns Program of the National Nuclear Security Administration. Mr. Trask filed the Complaint against his former employer, Los Alamos National Security, LLC (LANS), under the

  19. WBH-13-0017 - In the Matter of Edward G. Gallrein, III | Department of

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Energy WBH-13-0017 - In the Matter of Edward G. Gallrein, III WBH-13-0017 - In the Matter of Edward G. Gallrein, III On April 10, 2014, the Office of Hearings and Appeals (OHA) issued a decision granting two motions to dismiss the Part 708 Complaint filed by Edward G. Gallrein, III. Babcock & Wilcox Y-12, LLC, and GemTech Y-12, LLC, each filed a motion to dismiss Mr. Gallrein's Complaint against them, in which he alleged that he made disclosures protected under 10 C.F.R. § 708.5(a) that

  20. WBZ-13-0017 - In the Matter of Edward G. Gallrein, III | Department of

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Energy WBZ-13-0017 - In the Matter of Edward G. Gallrein, III WBZ-13-0017 - In the Matter of Edward G. Gallrein, III On April 10, 2014, the Office of Hearings and Appeals (OHA) issued a decision granting two motions to dismiss the Part 708 Complaint filed by Edward G. Gallrein, III. Babcock & Wilcox Y-12, LLC, and GemTech Y-12, LLC, each filed a motion to dismiss Mr. Gallrein's Complaint against them, in which he alleged that he made disclosures protected under 10 C.F.R. § 708.5(a) that