National Library of Energy BETA

Sample records for lt ge le

  1. Le Ge | Argonne National Laboratory

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Le Ge Postdoctoral Appointee Telephone (630) 252-4347 E-mail ge@anl.gov Projects Interfacial Materials Chemistry

  2. Lt.

    Office of Legacy Management (LM)

    TJ3: 7-Z 2.u 7 ifp&i?: 9:. .$&q Lt. ~ 3," .z' b ( $ -&7 ;" i C$' d. , : e-. flp w EmfP af XXPW 3PWlJ DEPARTMENT OF ENVIRONMENTAL PROTECTION DIVISION OF ENVIRONMENTAL QUALITY BUREAU OF RADIATION PROTECTION 380 SCOTCH ROAD. TRENTON. N. J. 08628 December 21, 1978 Ms. Louisa Little Pierpont Associates, Inc. 405 Lexington Avenue New York City, New York 10017 Dear Ms. Little: The purpose of this letter is to inquire about the present status of the former M. hT. Kellogg site

  3. CANDLEW<IDD.

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    @ CANDLEW<IDD. - - - - - - - S U I T E S :..*Ltk 1~1ai <t - ' 27w300 Warrenville Road, Warrenville, IL 60555 Phone: 630-836-1650 Fax: 630-836-1651 ,*,iv: 0". "~v4'd~ d Fermi Lab 2014 Preferred Rates Terms of Agreement: The term of this agreement is from January 1, 2014 through December 31, 2014. Guest Room Rates: Candlewood Suites is pleased to offer the preferred net non-commissionable rates of: Length of Stay Studio Suites One Bedroom Suites 1-6 $71.99 $81.99 7-14 $67.99 $77.99

  4. G?)~~<+!T

    Office of Legacy Management (LM)

    - G?)~~<+!T (?-?A / ;--\h \ , ; - \\ HAZARDOUS WASTE - _ I N S T A L L A T I O N ASSESSMENT REPORT BY D A V I D N - F A U V E R MAY 1986 IT kh; E,?$$ C / ~ R / I R ~ WORK PERFORMED UNDER C O N T R A C T NO. D E - A C 0 8 - 8 4 N V 1 0 3 2 7 REYNOLDS E L E C T R I C A L g ENGINEERING C O * , INC POST O F F I C E BOX 14400 LAS VEGAS, NV 8 9 1 1 q DISCLAIMER Portions of this document may be illegible in electronic image products. Images are produced from the best available original document.

  5. Connecting | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    GE Global Research's Danielle Merfeld talked to GE's Creator-in-Residence Sally LePage about what it takes to move... Read More Ars Technica: Analyzing the Internet of Things As ...

  6. Answering Mom: What Is Cloud Computing? | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Plant | Department of Energy Another SunShot Success: GE to Make PrimeStar Solar Panels at New Colorado Plant Another SunShot Success: GE to Make PrimeStar Solar Panels at New Colorado Plant October 14, 2011 - 4:03pm Addthis Thin film solar panels produced by General Electric’s PrimeStar in Arvada, Colorado | Image courtesy of <a href="http://edelman.com/">Edelman</a>. Thin film solar panels produced by General Electric's PrimeStar in Arvada, Colorado | Image

  7. Lt. Governor Guadagno Visits PPPL | Princeton Plasma Physics Lab

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Lt. Governor Guadagno Visits PPPL February 14, 2012 Tweet Widget Google Plus One Share on Facebook (Photo by Elle Starkman, PPPL Office of Communications) Gallery: (Photo by Elle Starkman, PPPL Office of Communications) PLAINSBORO, N.J. - New Jersey Lieutenant Governor Kim Guadagno visited the U.S. Department of Energy's Princeton Plasma Physics Laboratory (PPPL) on Monday, Feb. 13, learning about the economic impact of the facility upon the state and gleaning new facts about fusion science.

  8. Connecting | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Read More GE, MIT Build Crowdsourcing Software Platform GE (NYSE: GE), with the Massachusetts Institute of Technology (MIT) and the Defense Advanced Research Agency (DARPA), ...

  9. From: Chris C <ccarth@gmail.com>

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Chris C <ccarth@gmail.com> Sent: Monday, July 11, 2016 11:42 PM To: Regulatory.Review Subject:Regulatory Burden RFI Hello: I offer the following comments and suggestions for your consideration regarding the Request for Information (RFI) that was published in the Federal Register on May 10, 2016 (81 FR 28736). 1. Consolidate the Drug and Alcohol (D&A) Regulations of 10 CFR 707 and 712 and Increase Harmonization with 49 CFR 40 To the maximum extent possible, merge the D&A regulations

  10. GE Global Research Leadership | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Vic began his GE career in 1990 and rose through the ranks of GE Power & Water, eventually leading steam turbine technology. In 2005, Vic was named president & CEO of GE's ...

  11. Another SunShot Success: GE to Make PrimeStar Solar Panels at New Colorado

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Plant | Department of Energy Another SunShot Success: GE to Make PrimeStar Solar Panels at New Colorado Plant Another SunShot Success: GE to Make PrimeStar Solar Panels at New Colorado Plant October 14, 2011 - 4:03pm Addthis Thin film solar panels produced by General Electric’s PrimeStar in Arvada, Colorado | Image courtesy of <a href="http://edelman.com/">Edelman</a>. Thin film solar panels produced by General Electric's PrimeStar in Arvada, Colorado | Image

  12. Building | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    how we work across supply chains. By... Read More What is the GE store? Mark Little, CTO & Head of Global Research at GE, describes what the GE Store means and why it's...

  13. Photonics | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Home > Impact > The Photonics Lab at GE Global Research Click to email this to a friend ... The Photonics Lab at GE Global Research Loucas Tsakalakos, the Photonics lab manager at GE ...

  14. GE Global Research Contact | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    1800 Cai Lun Road, Zhangjiang High-Tech Park, Pudong, Shanghai, 201203, China Joey Yang +86 21 38773407 joey.yang@ge.com Communications and Public Relations GE Global...

  15. Taking inventions from idea to reality | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    do inventions go from idea to reality? Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) How do inventions go from idea to reality? GE Global Research's Danielle Merfeld talked to GE's Creator-in-Residence Sally LePage about what it takes to move an invention from an idea to a reality. In this video, LePage talks about

  16. GE Global Research Careers | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Careers The best and brightest minds in science and technology make breakthroughs daily at GE Global Research. Are you ready to join our team? Job Search Location Location Bangalore, India Dhahran, Saudi Arabia Munich, Germany Niskayuna, USA Oklahoma City, USA Rio de Janeiro, Brazil Shanghai, China Tirat Carmel, Israel Keyword Search Jobs » View All Jobs Keep in Touch With GE Global Research Careers Home > Careers Why Global Research careers_why_GE At Global Research, scientists, engineers

  17. GE Global Research Locations | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Locations GE Global Research is innovating around the clock. Select one of our locations to learn more about operations there.GE Global Research is innovating around the clock. Select a location to learn more about our operations. Home > Locations GE Global Research is ALWAYS OPEN Already know about our locations? Experience a special look at a day in our life around the world! See What We're Doing Dhahran, Saudi Arabia Founded: 2015 Employees: 15 Focus Areas: Material Characterization,

  18. Antiproton Production in 11.5A GeV/c Au+Pb Nucleus-Nucleus Collisions

    SciTech Connect (OSTI)

    De Cataldo, G.; Giglietto, N.; Raino, A.; Spinelli, P.; Huang, H.Z.; Hill, J.C.; Libby, B.; Wohn, F.K.; Rabin, M.S.; Haridas, P.; Pless, I.A.; Van Buren, G.; Armstrong, T.A.; Lewis, R.A.; Reid, J.D.; Smith, G.A.; Toothacker, W.S.; Davies, R.; Hirsch, A.S.; Porile, N.T.; Rimai, A.; Scharenberg, R.P.; Srivastava, B.K.; Tincknell, M.L.; Greene, S.V.; Bennett, S.J.; Cormier, T.M.; Dee, P.; Fachini, P.; Kim, B.; Li, Q.; Li, Y.; Munhoz, M.G.; Pruneau, C.A.; Wilson, W.K.; Zhao, K.; Barish, K.N.; Bennett, M.J.; Chikanian, A.; Coe, S.D.; Diebold, G.E.; Finch, L.E.; George, N.K.; Kumar, B.S.; Lajoie, J.G.; Majka, R.D.; Nagle, J.L.; Pope, J.K.; Rotondo, F.S.; Sandweiss, J.; Slaughter, A.J.; Wolin, E.J.

    1997-11-01

    We present the first results from the E864 Collaboration on the production of antiprotons in 10{percent} central 11.5A GeV /c Au+Pb nucleus collisions at the Brookhaven Alternating Gradient Synchrotron. We report invariant multiplicities for antiproton production in the kinematic region 1.4{lt}y{lt}2.2 and 50{lt} p{sub T}{lt} 300 MeV/c , and compare our data with a first collision scaling model and previously published results from the E878 Collaboration. The differences between the E864 and E878 antiproton measurements and the implications for antihyperon production are discussed. {copyright} {ital 1997} {ital The American Physical Society}

  19. Energy Cost Calculator for Commercial Heat Pumps (5.4 >=< 20 Tons) |

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Department of Energy Heat Pumps (5.4 >=< 20 Tons) Energy Cost Calculator for Commercial Heat Pumps (5.4 >=< 20 Tons) Vary equipment size, energy cost, hours of operation, and /or efficiency level. INPUT SECTION Input the following data (if any parameter is missing, calculator will set to default value). Defaults Project Type New Installation Replacement New Installation Condenser Type Air Source Water Source Air Source Existing Capacity * ton - Existing Cooling Efficiency * EER -

  20. Celebrating the Legacy of Bioenergy Director Lt. Col. William C. Holmberg |

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Department of Energy Celebrating the Legacy of Bioenergy Director Lt. Col. William C. Holmberg Celebrating the Legacy of Bioenergy Director Lt. Col. William C. Holmberg October 18, 2016 - 4:52pm Addthis By Jonathan Male, Director of the Bioenergy Technologies Office The U.S. Department of Energy's (DOE's) Bioenergy Technologies Office (BETO) recognizes the foundational accomplishments of retired Marine Lieutenant Colonel William C. Holmberg, the founding director of DOE bioenergy efforts and

  1. Ars Technica Visits GE's China Technology Center | GE Global...

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Technica visits GE's China Technology Center Click to email this to a friend (Opens in new ... Ars Technica visits GE's China Technology Center Ars Technica visited GE's China ...

  2. GE Researchers Tackle Three Unimpossible Missions | GE Global...

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Home > Impact > Unimpossible Missions: GE researchers prove nothing is impossible Click to ... Unimpossible Missions: GE researchers prove nothing is impossible A team of GE researchers ...

  3. GE Key Partner in Innovation Institutes | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    GE Is Key Partner in Manufacturing Innovation Institutes Click to email this to a friend ... GE Is Key Partner in Manufacturing Innovation Institutes GE Global Research ...

  4. GE Researcher Discusses Leadership | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    GE Researcher: Putting GE Beliefs into Action Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Researcher: Putting GE Beliefs into Action Joseph Vinciquerra 2015.01.30 Several weeks ago I had the privilege of attending the 2015 Global Leadership Meeting held near Lake George, New York. As a first time attendee, I

  5. GE Global Research News | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    ... Times Union: GE Global Research Center conference sees future of Industrial Internet ... collaborate to build more tangible things-like tanks, planes, and consumer appliances. ...

  6. Phase-correct bond lengths in crystalline Ge{sub x}Si{sub 1{minus}x} alloys

    SciTech Connect (OSTI)

    Woicik, J.C.; Miyano, K.E.; King, C.A.; Johnson, R.W.; Pellegrino, J.G.; Lee, T.; Lu, Z.H.

    1998-06-01

    Extended x-ray absorption fine structure performed at the Ge K edge has found the Ge-Ge and Ge-Si bond lengths in a series of crystalline Ge{sub x}Si{sub 1{minus}x} alloys (x{le}0.5) to be compositionally dependent. This accurate measurement was made possible by utilizing the {ital experimentally} derived Ge-Si atomic phase shift from the isoelectronic compounds AlAs and GaP. Strain and Coulomb contributions to the bond lengths are also considered. {copyright} {ital 1998} {ital The American Physical Society}

  7. Building | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    For a long time in many... Read More The Photonics Lab at GE Global Research Loucas Tsakalakos, the Photonics lab manager at GE Global Research, introduces photonics and shares ...

  8. Moving | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Moving We're always working on planes, trains and automobiles-and specialized ways to move people and products efficiently and sustainably. Home > Impact > Moving Rail Networks Are Getting Smarter Sources: 2012 GE Annual Report (page 12); Norfolk Southern 2010 sustainability reporter (page 17) North American Freight Railroad... Read More » The GE Store for Technology is Open for Business Welcome to GE Global Research, also known as the GE Store for Technology. Across our global network of

  9. Powering | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Powering Whether generating or distributing power, in familiar or new forms, we're making sure the world has power when and where it's needed. Home > Impact > Powering Grid Technologies at GE Global Research Chief Scientist Jim Bray describes the makeup and challenges of the electrical distribution grid and how GE Global Research is... Read More » GE Global Research Oil & Gas Technology Center Mark Little, SVP and chief technology officer for GE, and Eric Gebhardt, vice president of

  10. Building | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Building We're creating infrastructure, refining materials and assembling technologies that accommodate our constantly changing world. Home > Impact > Building GE Celebrates the Holidays with 3D-Printed Ornaments Scientists at GE Global Research get into the holiday spirit by bringing high-tech additive manufacturing techniques to Christmas... Read More » Global Research and GE Capital: Middle Market Collaboration In 2013, a partnering initiative between Global Research and GE Capital

  11. The GE Store

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    GE Store for Technology GE Global Research CS12005-02_GEstoreTechBook_R13.indd 1 3/10/15 8:45 AM Contents 2 Materials 5 Manufacturing 10 Industrial Internet 15 Energy CS12005-02_GEstoreTechBook_R13.indd 2 3/10/15 8:45 AM Welcome to GE Global Research, also known as the GE Store for Technology. Across our global network of nine technology centers, we have more than 3,600 of the world's best scientists and engineers driving advanced technologies for all of GE's industrial businesses. They are part

  12. GE Capital Partnership | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Global Research and GE Capital: Middle Market Collaboration Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in...

  13. GE Global Research News | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    ... It's all part of an exciting series with GE that focuses on tapping into technological creativity in every mom, sister and aunt. Whether fixing, hacking or redesigning things, moms ...

  14. GE Research and Development | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    on HPC4Mfg projects to deliver new capabilities in 3D Printing and higher jet engine efficiency More GE Puts Desalination "on Ice" to Produce Clean Water at Low Cost More

  15. GE and Quirky | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    company, to give everyday inventors access to GE's patents to inspire new inventions. ... Below are a few of the technologies we've shared to inspire new inventions and we're ...

  16. GE Get Fit | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Get Fit Program Attracts Adventurers Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Get Fit Program Attracts Adventurers Jim Bray 2012.10.02 In the past few weeks, we've shared #GetFit stories from our Global Research sites in Niskayuna, San Ramon and Shanghai. GE Healthcare's #getfit campaign is a social media

  17. GE Opens Research Center in Saudi Arabia | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    supply chain from extraction to consumption With new ... Research, GE Power & Water and GE Oil & Gas, further ... on a Power Generation Hot and Harsh Center of ...

  18. New GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    | Department of Energy GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology New GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology April 22, 2011 - 10:17am Addthis Photo courtesy of General Electric Photo courtesy of General Electric Minh Le Minh Le Deputy Director, Solar Energy Technologies Office Earlier this month, General Electric announced plans to enter the global marketplace for solar photovoltaic (PV) panels in a big way - and to do it, they will

  19. Powering | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    with Chart... Read More Teaming Up With Idea Works Puts Our Tech Into the World GE ... Data From Oil and Gas Fields When dealing with oil and gas production environments ...

  20. Powering | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Powering Whether generating or distributing power, in familiar or new forms, we're making sure the world has power when and where it's needed. Home > Impact > Powering Hi there, fellow! Back in June, Dr. Aaron Knobloch was named a Fellow of the American Society of Mechanical Engineers (ASME) in a ceremony held at... Read More » Unimpossible Missions: GE researchers prove nothing is impossible A team of GE researchers came together over the course of several months to tackle three

  1. SWAAM-LT: The long-term, sodium/water reaction analysis method computer code

    SciTech Connect (OSTI)

    Shin, Y.W.; Chung, H.H.; Wiedermann, A.H.; Tanabe, H.

    1993-01-01

    The SWAAM-LT Code, developed for analysis of long-term effects of sodium/water reactions, is discussed. The theoretical formulation of the code is described, including the introduction of system matrices for ease of computer programming as a general system code. Also, some typical results of the code predictions for available large scale tests are presented. Test data for the steam generator design with the cover-gas feature and without the cover-gas feature are available and analyzed. The capabilities and limitations of the code are then discussed in light of the comparison between the code prediction and the test data.

  2. GE leads the way in photonics research | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    GE continues leading role in photonics industry - from LED to digital x-ray Click to email ... GE continues leading role in photonics industry - from LED to digital x-ray Danielle ...

  3. GE Innovation and Manufacturing in Europe | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Innovation and Manufacturing in Europe Click to email this to a friend (Opens in new ... GE Innovation and Manufacturing in Europe Click the image below to see how GE is at work ...

  4. GE Hitachi Nuclear Energy | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    GE Hitachi Nuclear Energy Jump to: navigation, search Name: GE Hitachi Nuclear Energy Place: Wilmington, North Carolina Zip: 28402 Sector: Efficiency, Services Product: GE Hitachi...

  5. New Transportation Technology | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Read More GE, MIT Build Crowdsourcing Software Platform GE (NYSE: GE), with the Massachusetts Institute of Technology (MIT) and the Defense Advanced Research Agency (DARPA), ...

  6. Working at GE Global Research | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Why GE Why GE Fostering curiosity and work that makes a big impact on the world. That's how GE helps keep talented researchers motivated. Inspire For our scientists, inspiration can come from a rock or a sunset or a supercomputer. But mostly it comes from our dream of what the future can be. A world that's cleaner, greener, more efficient, more intelligent and more connected, where people have greater access to essentials like energy, water and healthcare. A better world. Innovate GE Global

  7. GE | OpenEI Community

    Open Energy Information (Open El) [EERE & EIA]

    by Jessi3bl(15) Member 16 December, 2012 - 19:18 GE, Clean Energy Fuels Partner to Expand Natural Gas Highway clean energy Clean Energy Fuels energy Environment Fuel GE Innovation...

  8. Chevron, GE form Technology Alliance

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Chevron, GE form Technology Alliance February 3, 2014 HOUSTON, TX, Feb. 3, 2014-Chevron Energy Technology Company and GE Oil & Gas announced today the creation of the Chevron GE Technology Alliance, which will develop and commercialize valuable technologies to solve critical needs for the oil and gas industry. The Alliance builds upon a current collaboration on flow analysis technology for oil and gas wells. It will leverage research and development from GE's newest Global Research Center,

  9. THE HAWAII INFRARED PARALLAX PROGRAM. I. ULTRACOOL BINARIES AND THE L/T TRANSITION

    SciTech Connect (OSTI)

    Dupuy, Trent J.; Liu, Michael C.

    2012-08-01

    We present the first results from our high-precision infrared (IR) astrometry program at the Canada-France-Hawaii Telescope. We measure parallaxes for 83 ultracool dwarfs (spectral types M6-T9) in 49 systems, with a median uncertainty of 1.1 mas (2.3%) and as good as 0.7 mas (0.8%). We provide the first parallaxes for 48 objects in 29 systems, and for another 27 objects in 17 systems, we significantly improve upon published results, with a median (best) improvement of 1.7 times (5 times). Three systems show astrometric perturbations indicative of orbital motion; two are known binaries (2MASS J0518-2828AB and 2MASS J1404-3159AB) and one is spectrally peculiar (SDSS J0805+4812). In addition, we present here a large set of Keck adaptive optics imaging that more than triples the number of binaries with L6-T5 components that have both multi-band photometry and distances. Our data enable an unprecedented look at the photometric properties of brown dwarfs as they cool through the L/T transition. Going from Almost-Equal-To L8 to Almost-Equal-To T4.5, flux in the Y and J bands increases by Almost-Equal-To 0.7 mag and Almost-Equal-To 0.5 mag, respectively (the Y- and J-band 'bumps'), while flux in the H, K, and L' bands declines monotonically. This wavelength dependence is consistent with cloud clearing over a narrow range of temperature, since condensate opacity is expected to dominate at 1.0-1.3 {mu}m. Interestingly, despite more than doubling the near-IR census of L/T transition objects, we find a conspicuous paucity of objects on the color-magnitude diagram just blueward of the late-L/early-T sequence. This 'L/T gap' occurs at (J - H){sub MKO} 0.1-0.3 mag, (J - K){sub MKO} = 0.0-0.4 mag, and implies that the last phases of cloud evolution occur rapidly. Finally, we provide a comprehensive update to the absolute magnitudes of ultracool dwarfs as a function of spectral type using a combined sample of 314 objects.

  10. Curing | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Curing We're pioneering medical developments, from robotic healthcare assistants to diagnostic tools and specialized, globally deployed gear. Home > Impact > Curing Behind-the-Scenes of the BERTI program After graduating in Biomedical Engineering, Pedro Gomez moved from Mexico to Munich, Germany, to get his Masters in Biomedical... Read More » Invention Factory: How Will We Live Forever? In this episode of Invention Factory - a partnership between GE and Vice - we probe the cutting edge

  11. Invention | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Invention Our people drive every scientific advance we make, every day. Find out who they are and what they're thinking right now. Home > Invention Inventors GE Global Research Centers are home to many of the world's brightest, most inquisitive minds in science and technology. Meet our people » Stump the Scientist Ask us your question about science or technology. Then check back often to see what our scientists say! Leave them speechless » Edison's Desk Blog Curious about researchers'

  12. Moving | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Moving We're always working on planes, trains and automobiles-and specialized ways to move people and products efficiently and sustainably. Home > Impact > Moving Green Skies of Brazil Improves Airspace Efficiency It's not uncommon for planes approaching some of Brazil's busiest airports to travel miles out of the way while pilots wait... Read More » Reducing Emissions in the New Tier 4 Locomotive GE Global Research Internal Combustion lab manager Omowoleola "Wole" Akinyemi

  13. GE's Digital Marketplace to Revolutionize Manufacturing | GE Global

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Research GE's Digital Marketplace to Revolutionize Manufacturing Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE's Digital Marketplace to Revolutionize Manufacturing GE will lead an effort to create an online community for manufacturing collaboration and data analysis The open source project will build the

  14. Purdue, GE Collaborate On Advanced Manufacturing | GE Global...

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    ... In addition to DMDI, Purdue is involved in providing skills and training support for the new jet engine assembly facility GE Aviation is building in neighboring Lafayette, Indiana. ...

  15. Israel: A Source of Innovation for GE |GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Israel: A Source of Innovation for GE Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Israel: A Source of Innovation for GE Oded Meirav 2014.05.22 Unlike other research organizations within GE Global Research, my team is not tasked with developing technology for GE's businesses. Instead...we hunt! Our job is to identify

  16. Carousolar | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Carousolar Uses Solar Power for Fun Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Carousolar Uses Solar Power for Fun This amazing all-white carousel is powered by 100 solar panels and lit up by GE's colorful TETRA Countour LED lights. You Might Also Like JimmyLopez_biorefineries_V Miming living organisms processes

  17. Chevron, GE form Technology Alliance

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Chevron, GE form Technology Alliance Chevron, GE form Technology Alliance The Chevron GE Technology Alliance will develop and commercialize valuable technologies to solve critical needs for the oil and gas industry. February 3, 2014 Los Alamos National Laboratory sits on top of a once-remote mesa in northern New Mexico with the Jemez mountains as a backdrop to research and innovation covering multi-disciplines from bioscience, sustainable energy sources, to plasma physics and new materials. Los

  18. Advanced Analytics | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    GE Predictivity(tm) Industrial Internet Solutions Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Predictivity(tm) Industrial Internet Solutions As a key player in GE's commitment to advance the Industrial Internet, the GE Software Center is at work helping industrial organizations use data, analytics, data

  19. Magnetic Refrigeration | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Johnson, a materials scientist and project leader on GE's magnetic refrigeration project. ... materials would further improve the competitiveness of magnetic refrigeration technology. ...

  20. Open Innovation | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    ... GE researchers along with Virginia Polytechnic Institute, Virginia Tech, and the National Renewable Energy Laboratory are working on a new manufacturing approach to making wind ...

  1. Le LHC, un tunnel cosmique

    SciTech Connect (OSTI)

    2009-09-17

    Et si la lumière au bout du tunnel du LHC était cosmique ? En d’autres termes, qu’est-ce que le LHC peut nous apporter dans la connaissance de l’Univers ? Car la montée en énergie des accélérateurs de particules nous permet de mieux appréhender l’univers primordial, chaud et dense. Mais dans quel sens dit-on que le LHC reproduit des conditions proches du Big bang ? Quelles informations nous apporte-t-il sur le contenu de l’Univers ? La matière noire est-elle détectable au LHC ? L’énergie noire ? Pourquoi l’antimatière accumulée au CERN est-elle si rare dans l’Univers ? Et si le CERN a bâti sa réputation sur l’exploration des forces faibles et fortes qui opèrent au sein des atomes et de leurs noyaux, est-ce que le LHC peut nous apporter des informations sur la force gravitationnelle qui gouverne l’évolution cosmique ? Depuis une trentaine d’années, notre compréhension de l’univers dans ses plus grandes dimensions et l’appréhension de son comportement aux plus petites distances sont intimement liées : en quoi le LHC va-t-il tester expérimentalement cette vision unifiée ? Tout public, entrée libre / Réservations au +41 (0)22 767 76 76

  2. GE Partners on Microgrid Project | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    GE, Utility, Government, and Academia Partner on Microgrid Project Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE, Utility, Government, and Academia Partner on Microgrid Project GE Awarded a $1.2M Department of Energy Grant to Design Technology to Keep Electricity Flowing after Catastrophic Weather Events NISKAYUNA,

  3. GE Scientists Experiment With Texas BBQ | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    GE BBQ Center is open, innovating and serving some delicious BBQ Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) The GE BBQ Center is open, innovating and serving some delicious BBQ Lynn DeRose 2015.03.15 This is the third in a five-part series of dispatches from GE's Science of Barbecue Experience at South by

  4. Cold Spray and GE Technology | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Cold Spray and GE Technology Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Cold Spray and GE Technology GE Global Research 2013.11.07 Leo and Cold Spray have something in common-fortunate accidents. Leo was originally a mechanical engineer who spent time in a materials science lab in Brazil. Cold Spray was a test gone

  5. GE Researchers Tackle Three Unimpossible Missions | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Home > Impact > Unimpossible Missions: GE researchers prove nothing is impossible Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Unimpossible Missions: GE researchers prove nothing is impossible A team of GE researchers came together over the course of several months to tackle three seemingly impossible missions.

  6. GE Solar Power | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    GE Solar Power Jump to: navigation, search Name: GE Solar Power Place: Delaware Sector: Solar Product: String representation "The solar busin ... s in July 2004." is too long....

  7. GE Global Research in Niskayuna, NY

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Niskayuna, USA Niskayuna, USA GE Global Research headquarters is the nerve center for innovative work across technologies and collaboration across GE businesses. Click to email...

  8. GE Wind Energy Germany | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    Energy Germany Jump to: navigation, search Name: GE Wind Energy Germany Place: Salzbergen, Germany Zip: 48499 Sector: Wind energy Product: Germany-based, division of GE Wind Energy...

  9. Brilliant Factories Could Revolutionize Manufacturing | GE Global...

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    materials, software, and analytics to commercialization, process, and business model best practices. The GE Store allows GE to leapfrog industries, to drive innovation,...

  10. New Energy Technologies | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Read More GE Scientists Demonstrate Promising Anti-icing Nano Surfaces GE Global Research today presented new research findings on its nanotextured anti-icing surfaces. In ...

  11. GE MEMS for LTE Advanced Mobile Devices | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    NISKAYUNA, NY, March 18, 2014 - The mechanical relay has been re-born at the GE Global ... of distortion introduced by RF components limits the effective bandwidth of the system. ...

  12. GE Scientists Experiment With Texas BBQ | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    We would talk to them about how GE is driving the Industrial Internet and we want to ... to him, he is able to understand how the pit is running to make things a lot easier. ...

  13. GE Researcher Explores Science Behind Movie Chappie | GE Global...

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    When Will We Have Robot Best Friends? A GE Researcher Explores the Science Behind Movie Magic Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new...

  14. Heat Transfer in GE Jet Engines | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Heat Transfer in GE Jet Engines Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on ...

  15. GE Develops High Water Recovery Technology in China | GE Global...

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Develops High Water Recovery Technology in China Click to email this to a friend (Opens in ... GE Develops High Water Recovery Technology in China Technology aims to boost development ...

  16. GE Awarded DOE Funding to Pilot Carbon Capture Technology | GE...

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Awarded DOE Project to Pilot CO2 Capture Technology for Power Plants Click to email this ... GE Awarded DOE Project to Pilot CO2 Capture Technology for Power Plants Same class of ...

  17. Laser Manufacturing | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Laser Manufacturing at GE Global Research Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Laser Manufacturing at GE Global Research Learn how laser sintering, an additive laser manufacturing process practiced at GE Global Research, makes parts from metal powder. You Might Also Like Munich_interior_V 10 Years ON: From

  18. Technical Education | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Technical Education at GE Global Research Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Technical Education at GE Global Research Mark Vermilyea describes the Edison Engineering Development Program (EEDP) and its "A Course," which features lectures on Global Research work in GE's major business units,

  19. Le LHC, un tunnel cosmique

    ScienceCinema (OSTI)

    None

    2016-07-12

    Et si la lumière au bout du tunnel du LHC était cosmique ? En d’autres termes, qu’est-ce que le LHC peut nous apporter dans la connaissance de l’Univers ? Car la montée en énergie des accélérateurs de particules nous permet de mieux appréhender l’univers primordial, chaud et dense. Mais dans quel sens dit-on que le LHC reproduit des conditions proches du Big bang ? Quelles informations nous apporte-t-il sur le contenu de l’Univers ? La matière noire est-elle détectable au LHC ? L’énergie noire ? Pourquoi l’antimatière accumulée au CERN est-elle si rare dans l’Univers ? Et si le CERN a bâti sa réputation sur l’exploration des forces faibles et fortes qui opèrent au sein des atomes et de leurs noyaux, est-ce que le LHC peut nous apporter des informations sur la force gravitationnelle qui gouverne l’évolution cosmique ? Depuis une trentaine d’années, notre compréhension de l’univers dans ses plus grandes dimensions et l’appréhension de son comportement aux plus petites distances sont intimement liées : en quoi le LHC va-t-il tester expérimentalement cette vision unifiée ? Tout public, entrée libre / Réservations au +41 (0)22 767 76 76

  20. Exclusive Electroproduction of meson rho on the nucleon Virtualite Intermediate With the CLAS Detector at Jlab; Electroproduction Exclusive de meson rho sur le nucleon Virtualite Intermediaire Avec le Detecteur CLAS at Jlab

    SciTech Connect (OSTI)

    Cynthia Hadjidakis

    2002-12-01

    This report presents the exclusive rho0 meson electroproduction on the nucleon at intermediate square momentum transfers Q{sup 2} (1.5 < Q{sup 2} < 3 GeV{sup 2}) and above the resonance region. The experiment has been taken place at the Jefferson laboratory with the CLAS detector, with a 4.2 GeV beam energy on a hydrogen target in the February-March 1999 period. They present the results and in particular the L/T separated cross sections. This experimentally unexplored domain experimentally is at the intersection between traditional ''soft'' hadronic physics models (VDM and Regge inspired models) and ''hard'' pQCD inspired approaches (recently introduced Generalized Parton Distribution). They discuss both approaches and their domain of validity.

  1. TEE-0077- In the Matter of GE Appliances & Lighting

    Energy.gov [DOE]

    The Decision and Order considers and Application for Exception filed by GE Appliances & Lighting (GE)

  2. Aviation Technology | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Read More Innovation 247: We're Always Open At GE Global Research, we work around the clock and across the globe to build, power, move and cure the world. Click the image... ...

  3. MEMS Relays | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Exhibition Focuses on Materials, Surfaces and Interfaces 2-3-11-v Carousolar Uses Solar Power for Fun 2-2-6-v GE Scientists Demonstrate Promising Anti-icing Nano Surfaces

  4. Airline Efficiency | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    reduce their operating costs and environmental footprint. You Might Also Like IMG0475 Innovation 247: We're Always Open direct write2square The GE Store for Technology is...

  5. Hybrid Locomotive | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Over the last decade, the U.S. government has enacted a number of rules designed to reduce smog and air pollution in cities and towns. For locomotive makers, like GE, that means ...

  6. Transverse-momentum dependent modification of dynamic texture in central Au+Au collisions at sqrt(sNN) = 200 GeV

    SciTech Connect (OSTI)

    Adams, J.; Aggarwal, M.M.; Ahammed, Z.; Amonett, J.; Anderson, B.D.; Arkhipkin, D.; Averichev, G.S.; Badyal, S.K.; Bai, Y.; Balewski, J.; Barannikova, O.; Barnby, L.S.; Baudot, J.; Bekele, S.; Belaga, V.V.; Bellwied, R.; Berger, J.; Bezverkhny, B.I.; Bharadwaj, S.; Bhasin, A.; Bhati, A.K.; Bhatia, V.S.; Bichsel, H.; Billmeier, A.; Bland, L.C.; Blyth, C.O.; Bonner, B.E.; Botje, M.; Boucham, A.; Brandin, A.V.; Bravar, A.; Bystersky, M.; Cadman, R.V.; Cai, X.Z.; Caines, H.; Calderon de la Barca Sanchez, M.; Castillo, J.; Cebra, D.; Chajecki, Z.; Chaloupka, P.; Chattopadhyay, S.; Chen, H.F.; Chen, Y.; Cheng, J.; Cherney, M.; Chikanian, A.; Christie, W.; Coffin, J.P.; Cormier, T.M.; Cramer, J.G.; Crawford, H.J.; Das, D.; Das, S.; de Moura, M.M.; Derevschikov, A.A.; Didenko, L.; Dietel, T.; Dogra, S.M.; Dong, W.J.; Dong, X.; Draper, J.E.; Du, F.; Dubey, A.K.; Dunin, V.B.; Dunlop, J.C.; Dutta Mazumdar, M.R.; Eckardt, V.; Edwards, W.R.; Efimov, L.G.; Emelianov, V.; Engelage, J.; Eppley, G.; Erazmus, B.; Estienne, M.; Fachini, P.; Faivre, J.; Fatemi, R.; Fedorisin, J.; Filimonov, K.; Filip, P.; Finch, E.; Fine, V.; Fisyak, Y.; Fomenko, K.; Fu, J.; Gagliardi, C.A.; Gans, J.; Ganti, M.S.; Gaudichet, L.; Geurts, F.; Ghazikhanian, V.; Ghosh, P.; Gonzalez, J.E.; Grachov, O.; Grebenyuk, O.; Grosnick, D.; Guertin, S.M.; Guo, Y.; Gupta, A.; Gutierrez, T.D.; Hallman, T.J.; Hamed, A.; Hardtke, D.; Harris, J.W.; Heinz, M.; Henry, T.W.; Hepplemann, S.; Hippolyte, B.; Hirsch, A.; Hjort, E.; Hoffmann, G.W.; Huang, H.Z.; Huang, S.L.; Hughes, E.W.; Humanic, T.J.; Igo, G.; Ishihara, A.; Jacobs, P.; Jacobs, W.W.; Janik, M.; Jiang, H.; Jones, P.G.; Judd, E.G.; Kabana, S.; Kang, K.; Kaplan, M.; Keane, D.; Khodyrev, V.Yu.; Kiryluk, J.; Kisiel, A.; Kislov, E.M.; Klay, J.; Klein, S.R.; Klyachko, A.; Koetke, D.D.; Kollegger, T.; Kopytine, S.M.; Kotchenda, L.; Kramer, M.; Kravtsov, P.; Kravtsov, V.I.; Krueger, K.; Kuhn, C.; Kulikov, A.I.; Kumar, A.; Kutuev, R.Kh.; et al.

    2005-01-10

    Correlations in the hadron distributions produced in relativistic Au+Au collisions are studied in the discrete wavelet expansion method. The analysis is performed in the space of pseudorapidity (|{eta}| {le} 1) and azimuth (full 2{pi}) in bins of transverse momentum (p{sub t}) from 0.14 {le} p{sub t} {le} 2.1 GeV/c. In peripheral Au+Au collisions a correlation structure ascribed to minijet fragmentation is observed. It evolves with collision centrality and p{sub t} in a way not seen before which suggests strong dissipation of minijet fragmentation in the longitudinally-expanding medium.

  7. Epi-cleaning of Ge/GeSn heterostructures

    SciTech Connect (OSTI)

    Di Gaspare, L.; Sabbagh, D.; De Seta, M.; Sodo, A.; Wirths, S.; Buca, D.; Zaumseil, P.; Schroeder, T.; Capellini, G.

    2015-01-28

    We demonstrate a very-low temperature cleaning technique based on atomic hydrogen irradiation for highly (1%) tensile strained Ge epilayers grown on metastable, partially strain relaxed GeSn buffer layers. Atomic hydrogen is obtained by catalytic cracking of hydrogen gas on a hot tungsten filament in an ultra-high vacuum chamber. X-ray photoemission spectroscopy, reflection high energy electron spectroscopy, atomic force microscopy, secondary ion mass spectroscopy, and micro-Raman showed that an O- and C-free Ge surface was achieved, while maintaining the same roughness and strain condition of the as-deposited sample and without any Sn segregation, at a process temperature in the 100–300 °C range.

  8. GE partners with 'Girls Who Code' for summer program | GE Global...

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    SAN RAMON, CA-June, 18 2015 - GE Software (NYSE: GE) announced today it will partner with ... The GE Software curriculum includes workshops on design thinking and user experience, ...

  9. GE MEMS for LTE Advanced Mobile Devices | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    GE MEMS Switch Technology Demonstrates Performance Which Could Meet Demands for Next-Generation "True 4G" Mobile Devices Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE MEMS Switch Technology Demonstrates Performance Which Could Meet Demands for Next-Generation "True 4G" Mobile Devices Prototype

  10. GE Researcher Explores Science Behind Movie Chappie | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    When Will We Have Robot Best Friends? A GE Researcher Explores the Science Behind Movie Magic Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) When Will We Have Robot Best Friends? A GE Researcher Explores the Science Behind Movie Magic The film "Chappie" is the story of a Police droid, reprogrammed to become

  11. GE Opens Research Center in Saudi Arabia | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    GE's US$1 billion investment in Saudi Arabia creates a path for new initiatives in localization, technology innovation and manufacturing to drive country's digital transformation by 2020 Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE's US$1 billion investment in Saudi Arabia creates a path for new initiatives in

  12. 12 GeV! | Jefferson Lab

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    GeV! 12 GeV! December 21, 2015 Our upgrade project is called the 12 GeV CEBAF Upgrade Project. At the time CD-4A was achieved, we demonstrated 2.2 GeV per pass. This was 12 GeV! Well, not quite. In fact with more than one pass, we limited ourselves to a little more than 6 GeV with three passes, and to 10.5 GeV with 5.5 passes. It was not felt to be prudent to demand 12 GeV out of the machine immediately after turn on. Operations in the spring of 2015 at high energy, ~10.5 GeV, came to a

  13. Sodium Battery | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Sodium Battery Technology Improves Performance and Safety Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Sodium Battery Technology Improves Performance and Safety Imagination and innovation have always been in GE's DNA. While exploring the expanded use of hybrid power in the rail, mining and marine industries, GE began

  14. Northern Colorado Wind Energy Center (GE) | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    GE) Jump to: navigation, search Name Northern Colorado Wind Energy Center (GE) Facility Northern Colorado Wind Energy Center (GE) Sector Wind energy Facility Type Commercial Scale...

  15. Milford Wind Corridor Phase I (GE Energy) | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    I (GE Energy) Jump to: navigation, search Name Milford Wind Corridor Phase I (GE Energy) Facility Milford Wind Corridor Phase I (GE Energy) Sector Wind energy Facility Type...

  16. Evaluation of Metal Halide, Plasma, and LED Lighting Technologies for a Hydrogen Fuel Cell Mobile Light (H 2 LT)

    DOE PAGES-Beta [OSTI]

    Miller, L. B.; Donohoe, S. P.; Jones, M. H.; White, W. A.; Klebanoff, L. E.; Velinsky, S. A.

    2015-04-22

    This article reports on the testing and comparison of a prototype hydrogen fuel cell light tower (H2LT) and a conventional diesel-powered metal halide light trailer for use in road maintenance and construction activities. The prototype was originally outfitted with plasma lights and then with light-emitting diode (LED) luminaires. Light output and distribution, lighting energy efficiency (i.e., efficacy), power source thermal efficiency, and fuel costs are compared. The metal halide luminaires have 2.2 and 3.1 times more light output than the plasma and LED luminaires, respectively, but they require more power/lumen to provide that output. The LED luminaires have 1.6 timesmore » better light efficacy than either the metal halide or plasma luminaires. The light uniformity ratios produced by the plasma and LED towers are acceptable. The fuel cell thermal efficiency at the power required to operate the plasma lights is 48%, significantly higher than the diesel generator efficiency of 23% when operating the metal halide lights. Due to the increased efficiency of the fuel cell and the LED lighting, the fuel cost per lumen-hour of the H2LT is 62% of the metal halide diesel light tower assuming a kilogram of hydrogen is twice the cost of a gallon of diesel fuel.« less

  17. Hadronization geometry and charge-dependent two-particlecorrelation on momentum subspace (eta, phi) in Au-Au collisions atsqrt(sNN) = 130 GeV

    SciTech Connect (OSTI)

    Adams, J.; Aggarwal, M.M.; Ahammed, Z.; Amonett, J.; Anderson,B.D.; Arkhipkin, D.; Averichev, G.S.; Badyal, S.K.; Bai, Y.; Balewski,J.; Barannikova, O.; Barnby, L.S.; Baudot, J.; Bekele, S.; Belaga, V.V.; Bellwied, R.; Berger, J.; Bezverkhny, B.I.; Bharadwaj, S.; Bhasin, A.; Bhati, A.K.; Bhatia, V.S.; Bichsel, H.; Billmeier, A.; Bland, L.C.; Blyth, C.O.; Bonner, B.E.; Botje, M.; Boucham, A.; Brandin, A.V.; Bravar,A.; Bystersky, M.; Cadman, R.V.; Cai, X.Z.; Caines, H.; Calderon de laBarca Sanchez, M.; Carroll, J.; Castillo, J.; Cebra, D.; Chajecki, Z.; Chaloupka, P.; Chattopdhyay, S.; Chen, H.F.; Chen, Y.; Cheng, J.; Cherney, M.; Chikanian, A.; Christie, W.; Coffin, J.P.; Cormier, T.M.; Cramer, J.G.; Crawford, H.J.; Das, D.; Das, S.; De Moura, M.M.; Derevschikov, A.A.; Didenko, L.; Dietel, T.; Dogra, S.M.; Dong, W.J.; Dong, X.; Draper, J.E.; Du, F.; Dubey, A.K.; Dunin, V.B.; Dunlop, J.C.; Dutta Mazumdar, M.R.; Eckardt, V.; Edwards, W.R.; Efimov, L.G.; Emelianov, V.; Engelage, J.; Eppley, G.; Erazmus, B.; Estienne, M.; Fachini, P.; Faivre, J.; Fatemi, R.; Fedorisin, J.; Filimonov, K.; Filip,P.; Finch, E.; Fine, V.; Fisyak, Y.; Foley, K.J.; Fomenko, K.; Fu, J.; Gagliardi, C.A.; Gans, J.; Ganti, M.S.; Gaudichet, L.; Geurts, F.; Ghazikhanian, V.; Ghosh, P.; Gonzalez, J.E.; Grachov, O.; Grebenyuk, O.; Grosnick, D.; Guertin, S.M.; Guo, Y.; Gupta, A.; Guiterrez, T.D.; Hallman, T.J.; Hamed, A.; Hardtke, D.; Harris, J.W.; Heinz, M.; Henry,T.W.; Heppelmann, S.; Hippolyte, B.; Hirsch, A.; Hjort, E.; Hoffmann,G.W.; Huang, H.Z.; Huang, S.L.; Hughes, E.W.; Humanic, T.J.; Igo, G.; Ishihara, A.; Jacobs, P.; Jacobs, W.W.; Janik, M.; Jiang, H.; Jones,P.G.; Judd, E.G.; Kabana, S.; Kang, K.; Kaplan, M.; Keane, D.; Khodyrv,V.Yu.; Kiryluk, J.; Kisiel, A.; Kislov, E.M.; Klay, J.; Klein, S.R.; Klyachko, A.; Koetke, D.D.; Kollegger, T.; Kopytine, S.M.; Kotchenda, L.; Kramer, M.; Kravtsov, P.; Kravtsov, V.I.; Krueger, K.; Kuhn, C.; Kulikov,A.I.; et al.

    2004-09-23

    We present the first measurements of charge-dependent two-particle correlations on momentum-space difference variables {eta}{sub 1}-{eta}{sub 2} (pseudorapidity) and {phi}{sub 1}-{phi}{sub 2} (azimuth) for primary charged hadrons with transverse momentum 0.15 {le} p{sub t} {le} 2 GeV/c and |{eta}| {le} 1.3 from Au-Au collisions at {radical}s{sub NN} = 130 GeV. We observe correlation structures not predicted by theory but consistent with evolution of hadron emission geometry with increasing centrality from one-dimensional fragmentation of color strings to higher-dimensional fragmentation of a hadron-opaque bulk medium.

  18. GE Shenhua JV | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    Name: GE & Shenhua JV Place: China Product: China based industrial coal gasification joint venture. References: GE & Shenhua JV1 This article is a stub. You can help OpenEI...

  19. Advanced Composite Materials | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Advanced composite materials, born in the labs at GE Global Research, are being used in an increasing number of GE products where their unique combination of properties such as ...

  20. GE Wind Energy | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    Energy Jump to: navigation, search Name: GE Wind Energy Place: Atlanta, Georgia Zip: GA 30339 Sector: Wind energy Product: GE's wind energy division, formed as a result of the...

  1. Our Favorite Engineer Jokes | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    engineer Owen S.) You think about your thermal heat capacity when picking out a winter coat. (via GE mechanical engineer Ajilli H.) You are awesome. (via GE electrical engineer ...

  2. Waste to Energy Technology | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    You Might Also Like 2-2-7-v GE Scientists Unveil Greener, Smarter Sleigh for Santa Claus 2-2-5-v GE Unveils High-Tech Superhero, GENIUS MAN lightning bolt We One-Upped Ben ...

  3. Exclusive pi^0 electroproduction at W > 2 GeV with CLAS

    SciTech Connect (OSTI)

    Bedlinskiy, I.; Kubarovsky, V.; Niccolai, S.; Stoler, P.; Adhikari, K.P.; Anderson, M.D.; Pereira, S. Anefalos; Avakian, H.; Ball, J.; Baltzell, N.A.; Battaglieri, M.; Batourine, V.; Biselli, A.S.; Boiarinov, S.; Bono, J.; Briscoe, W.J.; Brooks, W.K.; Burkert, V.D.; Carman, D.S.; Celentano, A.; Chandavar, S.; Colaneri, L.; Cole, P.L.; Contalbrigo, M.; Cortes, O.; Crede, V.; D'Angelo, A.; Dashyan, N.; De Vita, R.; De Sanctis, E.; Deur, A.; Djalali, C.; Doughty, D.; Dupre, R.; Egiyan, H.; El Alaoui, A.; El Fassi, L.; Elouadrhiri, L.; Eugenio, P.; Fedotov, G.; Fegan, S.; Fleming, J.A.; Forest, T.A.; Garillon, B.; Garcon, M.; Gavalian, G.; Gevorgyan, N.; Ghandilyan, Y.; Gilfoyle, G.P.; Giovanetti, K.L.; Girod, F.X.; Golovatch, E.; Gothe, R.W.; Griffioen, K.A.; Guegan, B.; Guo, L.; Hafidi, K.; Hakobyan, H.; Harrison, N.; Hattawy, M.; Hicks, K.; Holtrop, M.; Ireland, D.G.; Ishkhanov, B.S.; Isupov, E.L.; Jenkins, D.; Jo, H.S.; Joo, K.; Keller, D.; Khandaker, M.; Kim, A.; Kim, W.; Klein, A.; Klein, F.J.; Koirala, S.; Kuhn, S.E.; Kuleshov, S.V.; Lenisa, P.; Levine, W.I.; Livingston, K.; Lu, H.Y.; MacGregor, I.J.D.; Markov, N.; Mayer, M.; McKinnon, B.; Mirazita, M.; Mokeev, V.; Montgomery, R.A.; Moody, C.I.; Moutarde, H.; Movsisyan, A; Munoz Camacho, C.; Nadel-Turonski, P.; Niculescu, I.; Osipenko, M.; Ostrovidov, A.I.; Pappalardo, L.L.; Park, K.; Park, S.; Pasyuk, E.; Phelps, E.; Phelps, W.; Phillips, J.J.; Pisano, S.; Pogorelko, O.; Price, J.W.; Prok, Y.; Protopopescu, D.; Procureur, S.; Puckett, A.J.R.; Raue, B.A.; Ripani, M.; Ritchie, B.G.; Rizzo, A.; Rossi, P.; Roy, P.; Sabati, F.; Salgado, C.; Schott, D.; Schumacher, R.A.; Seder, E.; Senderovich, I.; Sharabian, Y.G.; Simonyan, A.; Smith, G.D.; Sober, D.I.; Sokhan, D.; Stepanyan, S.S.; Strauch, S.; Sytnik, V.; Tang, W.; Tian, Ye; Ungaro, M.; Vlassov, A.V.; Voskanyan, H.; Voutier, E.; Walford, N.K.; Watts, D.; Wei, X.; Weinstein, L.B.; Yurov, M.; Zachariou, N.; Zana, L.; Zhang, J.; Zhao, Z.W.; Zonta, I.

    2014-08-01

    Exclusive neutral-pion electroproduction (ep-->e'p'pi0) was measured at Jefferson Lab with a 5.75-GeV electron beam and the CLAS detector. Differential cross sections d4sigma/dtdQ2dxBdphipi and structure functions sigmaT+epsilonsigmaL,sigmaTT and ?LT as functions of t were obtained over a wide range of Q2 and xB. The data are compared with Regge and handbag theoretical calculations. Analyses in both frameworks find that a large dominance of transverse processes is necessary to explain the experimental results. For the Regge analysis it is found that the inclusion of vector meson rescattering processes is necessary to bring the magnitude of the calculated and measured structure functions into rough agreement. In the handbag framework, there are two independent calculations, both of which appear to roughly explain the magnitude of the structure functions in terms of transversity generalized parton distributions.

  4. Disclosures, Disclaimers and Policies | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Disclosures, Disclaimers and Policies Home > Disclosures, Disclaimers and Policies Financial Disclosures GE Global Research financial disclosures and conflicts related to PHS-funded research Equal Employment Opportunity Plans Persons wishing to review GE Global Reasearch's EEOP should contact the GEGR Recruiting Manager: Megan Magee, GRC Recruiting Leader, 518-387-6703, magee@ge.com. From GE Global Research https://twitter.com/GEResearch

  5. GE Scientist Stephan Biller Discusses the Industrial Internet | GE Global

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Research Manufacturing Scientist Stephan Biller Discusses the Industrial Internet Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Manufacturing Scientist Stephan Biller Discusses the Industrial Internet Stephan Biller, Chief Manufacturing Scientist at GE Global Research, talked with the Farstuff Podcast about the

  6. SPEIR: A Ge Compton Camera

    SciTech Connect (OSTI)

    Mihailescu, L; Vetter, K M; Burks, M T; Hull, E L; Craig, W W

    2004-02-11

    The SPEctroscopic Imager for {gamma}-Rays (SPEIR) is a new concept of a compact {gamma}-ray imaging system of high efficiency and spectroscopic resolution with a 4-{pi} field-of-view. The system behind this concept employs double-sided segmented planar Ge detectors accompanied by the use of list-mode photon reconstruction methods to create a sensitive, compact Compton scatter camera.

  7. It, Le. requeoted thet Contmot no

    Office of Legacy Management (LM)

    It, Le. requeoted thet Contmot no. AT( 30l)-1661 be mended to include additional development work oovered i,n the attaohed proposal. &?.EiO &,tQ movOd b +),i' o.' am&&-t.,+ a&,...

  8. Structural and Magnetothermal Properties of Compounds: Yb5SixGe4-x,Sm5SixGe4-x, EuO, and Eu3O4

    SciTech Connect (OSTI)

    Kyunghan Ahn

    2007-05-09

    The family of R{sub 5}Si{sub x}Ge{sub 4-x} alloys demonstrates a variety of unique physical phenomena related to magneto-structural transitions associated with reversible breaking and reforming of specific bonds that can be controlled by numerous external parameters such as chemical composition, magnetic field, temperature, and pressure. Therefore, R{sub 5}Si{sub x}Ge{sub 4-x} systems have been extensively studied to uncover the mechanism of the extraordinary magneto-responsive properties including the giant magnetoresistance (GMR) and colossal magnetostriction, as well as giant magnetocaloric effect (GMCE). Until now, more than a half of possible R{sub 5}Si{sub x}Ge{sub 4-x} pseudobinary systems have been completely or partially investigated with respect to their crystallography and phase relationships (R = La, Pr, Nd, Gd, Tb, Dy, Er, Lu, Y). Still, there are other R{sub 5}Si{sub x}Ge{sub 4-x} systems (R = Ce, Sm, Ho, Tm, and Yb) that are not studied yet. Here, we report on phase relationships and structural, magnetic, and thermodynamic properties in the Yb{sub 5}Si{sub x}Ge{sub 4-x} and Sm{sub 5}Si{sub x}Ge{sub 4-x} pseudobinary systems, which may exhibit mixed valence states. The crystallography, phase relationships, and physical properties of Yb{sub 5}Si{sub x}Ge{sub 4-x} alloys with 0 {le} x {le} 4 have been examined by using single crystal and powder x-ray diffraction at room temperature, and dc magnetization and heat capacity measurements between 1.8 K and 400 K in magnetic fields ranging from 0 to 7 T. Unlike the majority of R{sub 5}Si{sub x}Ge{sub 4-x} systems studied to date, where R is the rare earth metal, all Yb-based germanide-silicides with the 5:4 stoichiometry crystallize in the same Gd{sub 5}Si{sub 4}-type structure. The magnetic properties of Yb{sub 5}Si{sub x}Ge{sub 4-x} materials are nearly composition-independent, reflecting the persistence of the same crystal structure over the whole range of x from 0 to 4. Both the crystallographic and

  9. GE leads the way in photonics research | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    continues leading role in photonics industry - from LED to digital x-ray Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE continues leading role in photonics industry - from LED to digital x-ray Danielle Merfeld, Ph.D. 2015.07.27 Vice President Joseph Biden joined New York Gov. Andrew Cuomo in Rochester, New York

  10. GE's BBQ Science Experiments Produce Results |GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    BBQ Science Experiments Reveal Winning Rack of Ribs Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) BBQ Science Experiments Reveal Winning Rack of Ribs Lynn DeRose 2015.03.16 This is the fourth in a five-part series of dispatches from GE's Science of Barbecue Experience at South by Southwest. Our state-of-the-art

  11. User Experience Testing | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Software's Design and User Experience Studio Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Software's Design and User Experience Studio Looking to the future, GE created the Design and Experience Studio dedicated to developing clean, delightful, understandable, and actionable software experiences for GE customers,

  12. GE Uses 3D Printers to Make Jet Parts | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    About the Author GE Global Research Recent Posts by This Contributor Women Engineers Urge Young Girl to Pursue Engineering I Want to See... the New Global Research Website GE Is ...

  13. GE Announces Vic Abate as New Chief Technology Officer | GE Global...

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    and create next." Abate will become only the 10th leader in GE Global Research's 115-year history. As Chief Technology Officer, Abate will oversee GE's nine global research center...

  14. Colon Cancer Mapping | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Vanderbilt, GE Team Seek Deeper Understanding of Colon Cancer Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Vanderbilt, GE Team Seek Deeper Understanding of Colon Cancer Vanderbilt University has partnered with GE Global Research, the technology development arm for the General Electric Company (NYSE: GE), to better

  15. Crowdsourcing Software Announcement | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    GE, MIT Build Crowdsourcing Software Platform Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE, MIT Build Crowdsourcing Software Platform GE (NYSE: GE), with the Massachusetts Institute of Technology (MIT) and the Defense Advanced Research Agency (DARPA), is embarking on a program "vehicleforge.mil" to

  16. Big Data Analysis | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Software We're blending data, analytics and computing know-how into algorithms and programs that drive business and technology forward. Home > Innovation > Software GE Software's ...

  17. MAKE Magazine Review | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Real World in 10 Years primusenginefeaturedimage3 GE Innovation and Manufacturing in Europe MEMSVertical Next-gen RF MEMS Switch for a Smarter, Faster Internet of Things

  18. Work & Life at Shanghai | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    This community creates a cross-business platform for GE China technologists to enhance ... These include the latest In China for China efforts, as well as product demonstrations, ...

  19. GE Global Research in Shanghai, China

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Shanghai, China Shanghai, China GE's commercial and industrial history meets challenges posed by China's rapid growth to produce work reflecting the advancing world. Click to email ...

  20. Underground CO2 Storage | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    William Challener, principal investigator and physicist in the Photonics Lab at GE Global Research. "The work is very challenging. We have already developed a single sensor system ...

  1. New Medical Technology | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    boundaries. Home > Innovation > Healthcare GE Unveils High-Tech Superhero, GENIUS MAN Created on earth to inspire the next generation of scientists and engineers, a team of...

  2. GE Global Research in Tirat Carmel, Israel

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Tirat Carmel, Israel Tirat Carmel, Israel The Israel Technology Center creates partnerships between Israeli external innovators and GE to bring innovative technologies to the ...

  3. Young Inventor Award | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Join Mom and Dad at Work 2-2-5-v GE Unveils High-Tech Superhero, GENIUS MAN mri brain Disruptive Innovation in Healthcare through External Connections ...

  4. Ultrasound Open Innovation | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Launches Ultrasound Open Innovation Initiative Click to email this to a friend (Opens in ... GE Launches Ultrasound Open Innovation Initiative Similar to how independent developers ...

  5. Joseph Vinciquerra | Inventors | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    ... Dynamics of Ice Nucleation on Water Repellent Surfaces GE Scientists Demonstrate Promising Anti-icing Nano Surfaces Influences of Friction, Geometric Nonlinearities, and ...

  6. Blue Arc Machining | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Small Device, Broad Impact in Power Electronics IMG0475 Innovation 247: We're Always Open primusenginefeaturedimage3 GE Innovation and Manufacturing in Europe...

  7. Intelligent Rail Networks | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Research: Holiday Shopping & Electric Vehicles IMG0475 Innovation 247: We're Always Open primusenginefeaturedimage3 GE Innovation and Manufacturing in Europe ...

  8. Industrial Inspection Technologies | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Exhibition Focuses on Materials, Surfaces and Interfaces IMG0475 Innovation 247: We're Always Open primusenginefeaturedimage3 GE Innovation and Manufacturing in Europe...

  9. Internal Combustion Efficiency | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Research: Holiday Shopping & Electric Vehicles IMG0475 Innovation 247: We're Always Open primusenginefeaturedimage3 GE Innovation and Manufacturing in Europe...

  10. Inventors Behind General Electric | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Invention > Inventors From GE Global Research https:twitter.comGEResearch Invention Invention Inventors Stump the Scientist Edison's Desk Blog Innovation Innovation Appliances & ...

  11. Inventors Behind General Electric | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Inventors GE Global Research Centers are home to many of the world's brightest, most inquisitive minds in science and technology. Home > Invention > Inventors Sort: Random First ...

  12. Modeling of GE Appliances: Final Presentation

    SciTech Connect (OSTI)

    Fuller, Jason C.; Vyakaranam, Bharat; Leistritz, Sean M.; Parker, Graham B.

    2013-01-31

    This report is the final in a series of three reports funded by U.S. Department of Energy Office of Electricity Delivery and Energy Reliability (DOE-OE) in collaboration with GE Appliances’ through a Cooperative Research and Development Agreement (CRADA) to describe the potential of GE Appliances’ DR-enabled appliances to provide benefits to the utility grid.

  13. Minijet Deformation and Charge-independent Two-particleCorrelations on Momentum Subspace (eta,phi) In Au-Au Collisions atsqrt(sNN) = 130 GeV

    SciTech Connect (OSTI)

    Adams, J.; Aggarwal, M.M.; Ahammed, Z.; Amonett, J.; Anderson,B.D.; Arkhipkin, D.; Averichev, G.S.; Badyal, S.K.; Bai, Y.; Balewski,J.; Barannikova, O.; Barnby, L.S.; Baudot, J.; Bekele, S.; Belaga, V.V.; Bellwied, R.; Berger, J.; Bezverkhny, B.I.; Bharadwaj, S.; Bhasin, A.; Bhati, A.K.; Bhatia, V.S; Bichsel, H.; Billmeier, A.; Bland, L.C.; Blyth,C.O.; Bonner, B.E.; Botje, M.; Boucham, A.; Brandin, A.V.; Bravar, A.; Bystersky, M.; Cadman, R.V.; Cai, X.Z.; Caines, H.; Calderon de la BarcaSanchez, M.; Carroll, J.; Castillo, J.; Cebra, D.; Chajecki, Z.; Chaloupka, P.; Chattopadhyay, S.; Chen, H.F.; Chen, Y.; Cheng, J.; Cherney, M.; Chikanian, A.; Christie, W.; Coffin, J.P.; Cormier, T.M.; Cramer, J.G.; Crawford, H.J.; Das, D.; Das, S.; de Moura, M.M.; Derevschikov, A.A.; Didenko, L.; Dietel, T.; Dogra, S.M.; Dong, W.J.; Dong, X.; Draper, J.E.; Du, F.; Dubey, A.K.; Dunin, V.B.; Dunlop, J.C.; Dutta Mazumdar, M.R.; Eckardt, V.; Edwards, W.R.; Efimov, L.G.; Emelianov, V.; Engelage, J.; Eppley, G.; Erazmus, B.; Estienne, M.; Fachini, P.; Faivre, J.; Fatemi, R.; Fedorisin, J.; Filimonov, K.; Filip,P.; Finch, E.; Fine, V.; Fisyak, Y.; Foley, K.J.; Fomenko, K.; Fu, J.; Gagliardi, C.A.; Gans, J.; Ganti, M.S.; Gaudichet, L.; Geurts, F.; Ghazikhanian, V.; Ghosh, P.; Gonzalez, J.E.; Grachov, O.; Grebenyuk, O.; Grosnick, D.; Guertin, S.M.; Guo, Y.; Gupta, A.; Gutierrez, T.D.; Hallman, T.J.; Hamed, A.; Hardtke, D.; Harris, J.W.; Heinz, M.; Henry,T.W.; Hepplemann, S.; Hippolyte, B.; Hirsch, A.; Hjort, E.; Hoffmann,G.W.; Horsley, M.; Huang, H.Z.; Huang, S.L.; Hughes, E.W.; Humanic, T.J.; Igo, G.; Ishihara, A.; Jacobs, P.; Jacobs, W.W.; Janik, M.; Jiang, H.; Jones, P.G.; Judd, E.G.; Kabana, S.; Kang, K.; Kaplan, M.; Keane, D.; Khodyrev, V.Yu.; Kiryluk, J.; Kisiel, A.; Kislov, E.M.; Klay, J.; Klein,S.R.; Klyachko, A.; Koetke, D.D.; Kollegger, T.; Kopytine, M.; Kotchenda,L.; Kramer, M.; Kravtsov, P.; Kravtsov, V.I.; Krueger, K.; Kuhn, C.; et al.

    2004-11-04

    We present first measurements of charge-independent correlations on momentum-space difference variables {eta}{sub 1}-{eta}{sub 2} (pseudorapidity) and {phi}{sub 1}-{phi}{sub 2} (azimuth) for charged primary hadrons with transverse momentum within 0.15 {le} p{sub t} {le} 2 GeV/c and |{eta}| {le} 1.3 from Au-Au collisions at {radical}s{sub NN} = 130 GeV. We observe strong charge-independent correlations associated with minijets and elliptic flow. The width of the minijet peak on {eta}{sub 1}-{eta}{sub 2} increases by a factor 2.3 from peripheral to central collisions, suggesting strong coupling of partons to a longitudinally-expanding colored medium. New methods of jet analysis introduced here reveal nonperturbative medium effects in heavy ion collisions.

  14. L.T. Blackford

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    942k gallons (CY 14M) Received Environmental Restoration Disposal Facility (ERDF) leachate (119k gallons) at Liquid Effluent Retention Facility (LERF) Basin 44 (CY 1.8M)...

  15. &lt;Title>

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Macroeconomic Real Gross Domestic Product (billion chained 2009 dollars - SAAR) ............. 16,269 16,374 16,455 16,491 16,525 16,583 16,657 16,738 16,834 16,931 17,031 17,116 16,397 16,626 16,978 Real Personal Consumption Expend. (billion chained 2009 dollars - SAAR) ............. 11,102 11,181 11,256 11,319 11,365 11,485 11,566 11,636 11,693 11,755 11,822 11,878 11,215 11,513 11,787 Real Fixed Investment (billion chained 2009 dollars - SAAR) ............. 2,727 2,756 2,795 2,793 2,787 2,779

  16. Tesis LT.PDF

    Open Energy Information (Open El) [EERE & EIA]

    es muy deficiente, pues esta vara mucho por zonas, en dependencia de la nubosidad. Una red de estaciones para caracterizar el rgimen de radiacin solar en todo el pas...

  17. C. Lt. Cooper

    Office of Legacy Management (LM)

    ... F'urther expansion of Brush capacity would require building new plants for production of Fluoride and metal. Their new oxide plant should be completed late this month and this will ...

  18. Passionate Technologists Wanted at ASME Turbo Expo|GE Global...

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    who want to learn more about GE and its global Research Centers. For this purpose, the Aero & Thermal Systems groups of GE Global Research and representatives from several GE...

  19. Cedar Creek Wind Farm II (GE) | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    GE) Jump to: navigation, search Name Cedar Creek Wind Farm II (GE) Facility Cedar Creek II (GE) Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service...

  20. Top of the World (GE) | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    GE) Jump to: navigation, search Name Top of the World (GE) Facility Top of the World (GE) Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner...

  1. Xergy Ships First Breakthrough Water Heater Compressor to GE...

    Energy Savers

    Xergy Ships First Breakthrough Water Heater Compressor to GE Xergy Ships First Breakthrough Water Heater Compressor to GE September 15, 2015 - 3:41pm Addthis Xergy Inc. and GE...

  2. Kondo-lattice behavior and multiple characteristic temperatures in CeIr{sub 2}Ge{sub 2}

    SciTech Connect (OSTI)

    Mallik, R.; Sampathkumaran, E.V.; Paulose, P.L.; Dumschat, J.; Wortmann, G.

    1997-02-01

    The results of electrical-resistivity {rho} measurements (1.4{endash}300 K) on the alloys, Ce{sub 1{minus}x}La{sub x}Ir{sub 2}Ge{sub 2} (0{le}x{le}1), CeIr{sub 2{minus}x}(Rh,Pt){sub x}Ge{sub 2} (x=0.2 and 0.4), and CeIr{sub 2}Ge{sub 2{minus}x}(Si,Sn){sub x} (x=0.2 and 0.4), are reported in order to understand the Kondo effect in CeIr{sub 2}Ge{sub 2}. There is a significant decrease in {rho} as the temperature is lowered from 100 to 4.2 K for x = 0.0. This feature disappears for a small replacement of Ce by La (x = 0.3), thereby resulting in a single-ion Kondo effect for higher values of x. This finding establishes that the temperature T{sub coh}, characterizing the coherent scattering among the Kondo centers for x=0 is as large as about 100 K. The coherent scattering is not destroyed by small substitutions at the Ir or Ge site. The observed sensitivity of this coherence effect to a small disruption of Ce sublattice periodicity alone by La substitution is uncommon among trivalent Ce alloys. Such a large T{sub coh} value enables us to emphasize the need to invoke three characteristic temperatures for nonmagnetic Kondo lattices. {copyright} {ital 1997} {ital The American Physical Society}

  3. VEE-0034- In the Matter of LePiers' Inc.

    Energy.gov [DOE]

    On October 16, 1996, LePiers' Inc. (LePiers') of Fosston, Minnesota filed an Application for Exception with the Office of Hearings and Appeals (OHA) of the Department of Energy (DOE). In its...

  4. Event-by-event hexb pt hexb fluctuations in Au-Au collisions atsqrt(sNN) = 130 GeV

    SciTech Connect (OSTI)

    Adams, J.; Adler, C.; Aggarwal, M.M.; Ahammed, Z.; Amonett, J.; Anderson, B.D.; Anderson, M; Arkhipkin, D.; Averichev, G.S.; Badyal,S.K.; Balewski, J.; Barannikova, O.; Barnby, L.S.; Baudot, J.; Bekele,S.; Belaga, V.V.; Bellwied, R.; Berger, J.; Bezverkhny, B.I.; Bhardwaj,S.; Bhaskar, P.; Bhati, A.K.; Bichsel, H.; Billmeier, A.; Bland, L.C.; Blyth, C.O.; Bonner, B.E.; Botje, M.; Boucham, A.; Brandin, A.; Bravar,A.; Cadman, R.V.; Cai, X.Z.; Caines, H.; Calderon de la Barca Sanchez,M.; Carroll, J.; Castillo, J.; Castro, M.; Cebra, D.; Chaloupka, P.; Chattopadhyay, S.; Chen, H.F.; Chen, Y.; Chernenko, S.P.; Cherney, M.; Chikanian, A.; Choi, B.; Christie, W.; Coffin, J.P.; Cormier, T.M.; Cramer, J.G.; Crawford, H.J.; Das, D.; Das, S.; Derevschikov, A.A.; Didenko, L.; Dietel, T.; Dong, X.; Draper, J.E.; Du, F.; Dubey, A.K.; Dunin, V.B.; Dunlop, J.C.; Dutta Majumdar, M.R.; Eckardt, V.; Efimov,L.G.; Emelianov, V.; Engelage, J.; Eppley, G.; Erazmus, B.; Estienne, M.; Fachini, P.; Faine, V.; Faivre, J.; Fatemi, R.; Filimonov, K.; Filip, P.; Finch, E.; Fisyak, Y.; Flierl, D.; Foley, K.J.; Fu, J.; Gagliardi, C.A.; Ganti, M.S.; Gutierrez, T.D.; Gagunashvili, N.; Gans, J.; Gaudichet, L.; Germain, M.; Geurts, F.; Ghazikhanian, V.; Ghosh, P.; Gonzalez, J.E.; Grachov, O.; Grigoriev, V.; Cronstal, S.; Grosnick, D.; Guedon, M.; Guertin, S.M.; Gupta, A.; Gushin, E.; Hallman, T.J.; Hardtke, D.; Harris,J.W.; Heinz, M.; Henry, T.W.; Heppelmann, S.; Herston, T.; Hippolyte, B.; Hirsch, A.; Hjort, E.; Hoffmann, G.W.; Horsley, M.; Huang, H.Z.; Huang,S.L.; Humanic, T.J.; Igo, G.; Ishihara, A.; Jacobs, P.; Jacobs, W.W.; Janik, M.; Johnson, I.; Jones, P.G.; Judd, E.G.; Kabana, S.; Kaneta, M.; Kaplan, M.; Keane, D.; Kiryluk, J.; Kisiel, A.; Klay, J.; Klein, S.R.; Klyachko, A.; Koetke, D.D.; Kollegger, T.; Konstantinov, A.S.; Kopytine,S.M.; Kotchenda, L.; Kovalenko, A.D.; Kramer, M.; Kravtsov, P.; Krueger,K.; Kuhn, C.; Kulikov, A.I.; Kumar, A.; et al.

    2003-09-02

    We present the first large-acceptance measurement of event-wise fluctuations in Au-Au collisions at {radical}s{sub NN} = 130 GeV. Significant nonstatistical fluctuations are observed. The measured fractional r.m.s. width excess of the event-wise distribution for the 15% most-central events for charged hadrons within |{eta}| < 1 and 0.15 {le} p{sub t} {le} 2 GeV/c is 13.7 {+-} 0.1(stat) {+-}1.3(syst)% relative to a statistical reference. The variation of charge-independent fluctuation excess with centrality is non-monotonic but smooth. Charge-dependent nonstatistical fluctuations are also observed.

  5. Structural evolution of Ge-rich Si{sub 1-x}Ge{sub x} films deposited...

    Office of Scientific and Technical Information (OSTI)

    clusters percolate together and Si diffuses and redistributes to form a GeSiGe coreshell structure, and some Ge atoms partially diffuse to the surface as a result of segregation. ...

  6. GE Global Research Sourcing External Document & Process Repository...

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    GE Global Research Sourcing External Document & Process Repository Home > GE Global Research Sourcing External Document & Process Repository Supplier Integrity Guide Purchase Order...

  7. GE Partners with Lab on Ultrasonic Clothes Dryer | Department...

    Office of Environmental Management (EM)

    GE Partners with Lab on Ultrasonic Clothes Dryer GE Partners with Lab on Ultrasonic Clothes Dryer Addthis Description This video tells how a partnership between Oak Ridge National ...

  8. GE to provide data, analytics to Brazilian Canoe Confederation...

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    GE to sponsor Brazilian Canoe Confederation Innovative partnership will pair GE software scientists with athletes to explore how big data can help them optimize their performance ...

  9. GE CRD SERVICE ORDER TERMS AND CONDITIONS (6/00)

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    specifications and other documents referred to in this ... Order shall not include email, AND GE HEREBY REJECTS ANY ... transferred to GE is on the list of chemical substances ...

  10. GE Hybrid Power Generation Systems | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    Name: GE Hybrid Power Generation Systems Place: Georgia Zip: Atlanta Product: Focused on fuel cell stack and system development. References: GE Hybrid Power Generation Systems1...

  11. GE Showcases Industrial Internet Innovations and Promotes Win...

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    GE China Technology Center teams up with Zhangjiang High-tech Management Committee to ... SHANGHAI, Oct. 21 -- The GE China Technology Center presented the newest industrial trends ...

  12. Testimonials - Partnerships in Fuel Cells - GE Global Research...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Fuel Cells - GE Global Research Testimonials - Partnerships in Fuel Cells - GE Global Research Addthis Text Version The words "Office of Energy Efficiency & Renewable Energy, U.S. ...

  13. Butterfly-Inspired Thermal Imaging | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Radislav Potyrailo, principal scientist at GE Global Research who leads GE's bio-inspired photonics programs. "This new class of thermal imaging sensors promises significant ...

  14. GE Software Expert Julian Keith Loren Discusses Innovation and...

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    GE Software Expert Julian Keith Loren Discusses Innovation and the Industrial Internet ... GE Software Expert Julian Keith Loren Discusses Innovation and the Industrial Internet ...

  15. A SEARCH FOR L/T TRANSITION DWARFS WITH Pan-STARRS1 AND WISE: DISCOVERY OF SEVEN NEARBY OBJECTS INCLUDING TWO CANDIDATE SPECTROSCOPIC VARIABLES

    SciTech Connect (OSTI)

    Best, William M. J.; Liu, Michael C.; Magnier, Eugene A.; Aller, Kimberly M.; Burgett, W. S.; Chambers, K. C.; Hodapp, K. W.; Kaiser, N.; Kudritzki, R.-P.; Morgan, J. S.; Tonry, J. L.; Wainscoat, R. J.; Deacon, Niall R.; Dupuy, Trent J.; Redstone, Joshua; Price, P. A.

    2013-11-10

    We present initial results from a wide-field (30,000 deg{sup 2}) search for L/T transition brown dwarfs within 25 pc using the Pan-STARRS1 and Wide-field Infrared Survey Explorer (WISE) surveys. Previous large-area searches have been incomplete for L/T transition dwarfs, because these objects are faint in optical bands and have near-infrared (near-IR) colors that are difficult to distinguish from background stars. To overcome these obstacles, we have cross-matched the Pan-STARRS1 (optical) and WISE (mid-IR) catalogs to produce a unique multi-wavelength database for finding ultracool dwarfs. As part of our initial discoveries, we have identified seven brown dwarfs in the L/T transition within 9-15 pc of the Sun. The L9.5 dwarf PSO J140.2308+45.6487 and the T1.5 dwarf PSO J307.6784+07.8263 (both independently discovered by Mace et al.) show possible spectroscopic variability at the Y and J bands. Two more objects in our sample show evidence of photometric J-band variability, and two others are candidate unresolved binaries based on their spectra. We expect our full search to yield a well-defined, volume-limited sample of L/T transition dwarfs that will include many new targets for study of this complex regime. PSO J307.6784+07.8263 in particular may be an excellent candidate for in-depth study of variability, given its brightness (J = 14.2 mag) and proximity (11 pc)

  16. About Additive Manufacturing | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Introducing Additive Manufacturing at GE Global Research Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Introducing Additive Manufacturing at GE Global Research Prabhjot Singh, manager of the Additive Manufacturing Lab at GE Global Research, describes the technology used in his lab. You Might Also Like DirectWrite_V

  17. Stump the Scientist | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Home > Invention > Stump the Scientist Behind the Scenes with Chief Scientist Jim Bray Watch the Video Happy Pi Day from GE Global Research Watch the Video Ready to Stump the ...

  18. Work & Life at Niskayuna | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    It is subsidized through GE's HealthAhead program and is open Monday through Saturday to employees, employee's spouses or same-sex domestic partners and retirees. Women in Science ...

  19. GE Global Research Europe in Munich, Germany

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Smart Ways to Build Smart Things direct write2square The GE Store for Technology is Open for Business be an engineer Women Engineers Urge Young Girl to Pursue Engineering

  20. Pi in Applied Optics | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    The sPI Cam visits the Applied Optics Lab to see how Mark Meyers, a physicist and optical engineer at GE Global Research, uses Pi. You Might Also Like lightning bolt We One-Upped ...

  1. Researching NDE, Additive Manufacturing |GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    for GE Intern Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn ...

  2. Advanced Water Technologies | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Water We're developing ways to purify and conserve this vital resource. Take a look at our work. Home > Innovation > Water Innovation 247: We're Always Open At GE Global Research, ...

  3. Remembering Zach Stum | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Remembering Zach Stum Ron Olson 2014.02.25 "To live in hearts we leave behind is not to die." Thomas Campbell, Physicist Zach-Stum On Sunday, February 9, GE Global Research lost a ...

  4. Miniaturized Turbine Offers Desalination Solution | GE Global...

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    GE Puts Desalination "on Ice" to Produce Clean Water at Low Cost Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens ...

  5. High Performance Computing for Manufacturing Parternship | GE...

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    GE, US DOE Partner on HPC4Mfg projects to deliver new capabilities in 3D Printing and higher jet engine efficiency Click to email this to a friend (Opens in new window) Share on ...

  6. Oil & Gas Technology Center | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Global Research Oil & Gas Technology Center Click to email this to a friend (Opens in new ... GE Global Research Oil & Gas Technology Center Mark Little, SVP and chief technology ...

  7. Metal MEMS Devices | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Exhibition Focuses on Materials, Surfaces and Interfaces 2-3-11-v Carousolar Uses Solar Power for Fun 2-2-6-v GE Scientists Demonstrate Promising Anti-icing Nano Surfaces

  8. GE Appliances: Order (2010-CE-2113)

    Energy.gov [DOE]

    DOE issued an Order after entering into a Compromise Agreement with General Electric Appliances after finding GE Appliances had failed to certify that certain models of dehumidifiers comply with the applicable energy conservation standards.

  9. Game Changing Technology | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Real World in 10 Years primusenginefeaturedimage3 GE Innovation and Manufacturing in Europe a79-v-open-innovation We're Open to Collaboration with Companies Big and Small...

  10. Working in the Cleanroom | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    You Might Also Like 2-2-5-v GE Unveils High-Tech Superhero, GENIUS MAN IMG0475 Innovation 247: We're Always Open MunichinteriorV 10 Years ON: From the Lab to the...

  11. Kids at Work | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    High-Tech Superhero, GENIUS MAN direct write2square The GE Store for Technology is Open for Business IMG0475 Innovation 247: We're Always Open MunichinteriorV 10...

  12. Access to Clean Water | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Clean Water Innovations Click to email this to a friend (Opens in new window) Share on ... What Works: Mark Little on Clean Water Innovations Mark Little, director of GE Global ...

  13. Crowdsourcing Software Award | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Crowdsourcing Software Platform Wins Award Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Crowdsourcing Software Platform Wins Award GE Global Research, the technology development arm of the General Electric Company (NYSE: GE) today announced that it has won a prestigious Manufacturing Leadership 100 award in

  14. New Energy Technologies | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Energy We're building a powerful future that combines sustainable energy solutions, efficient turbines and a resilient electrical grid. Home > Innovation > Energy Silicon Carbide Applications: Small Device, Broad Impact in Power Electronics It's not every day that the engineers at GE Global Research get their hands on a material that's literally revolutionizing an... Read More » Flying above the innovative ecoROTR wind turbine in a drone GE spent a week flying state-of-the-art drones over

  15. New Transportation Technology | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Transportation We're working with railroads and heavy industries to create hybrid systems, batteries and first-in-class transportation solutions. Home > Innovation > Transportation Silicon Carbide Applications: Small Device, Broad Impact in Power Electronics It's not every day that the engineers at GE Global Research get their hands on a material that's literally revolutionizing an... Read More » Data Science Makes Trains More Efficient In this Special Report, GE's Creator-in-Residence,

  16. Robotic Wind Turbine Inspection | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Advances Wind Turbine Inspection Through Robotic Trials Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Advances Wind Turbine Inspection Through Robotic Trials GE Global Research is advancing technology that will make the inspection of wind turbines faster and more reliable for customers. Currently, an inspector

  17. Advanced Lighting Technologies | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Appliances & Lighting We're developing cutting-edge appliances and innovative lighting to make life easier, reduce costs and increase energy efficiency. Home > Innovation > Appliances & Lighting Rio 2016 Olympic Games' technologies You cannot imagine how far GE reaches into the Rio 2016 Olympic Games. The technologies (visible and invisible) that will light,... Read More » A Quirky Idea: Turning Patents Into Consumer Products In April 2013, GE and Quirky announced a partnership

  18. Immelt: GE Stands at Intersection of Physical, Digital | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Immelt: GE stands at the intersection of the physical, digital Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Immelt: GE stands at the intersection of the physical, digital GE's 2015 Annual Meeting of Shareowners was held Wednesday, April 22, in Oklahoma City, the location of GE's newest Global Research facility.

  19. Machine Nirvana: How GE Is Using AI To Build A Powerhouse Of Knowledge | GE

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Global Research Machine Nirvana: How GE Is Using AI To Build A Powerhouse Of Knowledge Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Machine Nirvana: How GE Is Using AI To Build A Powerhouse Of Knowledge By Tomas Kellner - GE Reports GE was still essentially a startup when its managers hired young MIT chemistry

  20. Measurements of the Electron-Helicity Dependent Cross Sections of Deeply Virtual Compton Scattering with CEBAF at 12 GeV

    SciTech Connect (OSTI)

    J. Roche; C. E. Hyde-Wright; B. Michel; C. Munoz Camacho; et al.

    2006-09-11

    We propose precision measurements of the helicity-dependent and helicity independent cross sections for the ep {yields} ep{gamma} reaction in Deeply Virtual Compton Scattering (DVCS) kinematics. DVCS scaling is obtained in the limits Q{sup 2} >> {Lambda}{sub QCD}{sup 2}, x{sub Bj} fixed, and -{Delta}{sup 2} = -(q-q{prime}){sup 2} << Q{sup 2}. We consider the specific kinematic range Q{sup 2} > 2 GeV{sup 2}, W > 2 GeV, and -{Delta}{sup 2} {le} 1 GeV{sup 2}. We will use our successful technique from the 5.75 GeV Hall A DVCS experiment (E00-110). With polarized 6.6, 8.8, and 11 GeV beams incident on the liquid hydrogen target, we will detect the scattered electron in the Hall A HRS-L spectrometer (maximum central momentum 4.3 GeV/c) and the emitted photon in a slightly expanded PbF{sub 2} calorimeter. In general, we will not detect the recoil proton. The H(e,e{prime}{gamma})X missing mass resolution is sufficient to isolate the exclusive channel with 3% systematic precision.

  1. The Nature of the Distinctive Microscopic Features in R5(SixGe1-x)4 Magnetic Refrigeration Materials

    SciTech Connect (OSTI)

    Ozan Ugurlu

    2006-05-01

    Magnetic refrigeration is a promising technology that offers a potential for high energy efficiency. The giant magnetocaloric effect of the R{sub 5}(Si{sub x}, Ge{sub 1-x}){sub 4} alloys (where R=rare-earth and O {le} x {le} 1), which was discovered in 1997, make them perfect candidates for magnetic refrigeration applications. In this study the microstructures of Gd{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4} alloys have been characterized using electron microscopy techniques, with the focus being on distinctive linear features first examined in 1999. These linear features have been observed in R{sub 5}(Si{sub x}, Ge{sub 1-x}){sub 4} alloys prepared from different rare-earths (Gd, Tb, Dy and Er) with different crystal structures (Gd{sub 5}Si{sub 4}-type orthorhombic, monoclinic and Gd{sub 5}Ge{sub 4}-type orthorhombic). Systematic scanning electron microscope studies revealed that these linear features are actually thin-plates, which grow along specific directions in the matrix material. The crystal structure of the thin-plates has been determined as hexagonal with lattice parameters a=b=8.53 {angstrom} and c=6.40 {angstrom} using selected area diffraction (SAD). Energy dispersive spectroscopy analysis, carried out in both scanning and transmission electron microscopes, showed that the features have a composition approximating to R{sub 5}(Si{sub x},Ge{sub 1-x}){sub 3}.phase. Orientation relationship between the matrix and the thin-plates has been calculated as [- 1010](1-211){sub p}//[010](10-2){sub m}. The growth direction of the thin plates are calculated as (22 0 19) and (-22 0 19) by applying the Ag approach of Zhang and Purdy to the SAD patterns of this system. High Resolution TEM images of the Gd{sub 5}Ge{sub 4} were used to study the crystallographic relationship. A terrace-ledge structure was observed at the interface and a 7{sup o} rotation of the reciprocal lattices with respect to each other, consistent with the determined orientation relationship, was noted

  2. Measurement of the B+ production cross-section in p anti-p collisions at s**(1/2) = 1960-GeV

    SciTech Connect (OSTI)

    Abulencia, A.; Adelman, J.; Affolder, T.; Akimoto, T.; Albrow, M.G.; Ambrose, D.; Amerio, S.; Amidei, D.; Anastassov, A.; Anikeev, K.; Annovi, A.; /Taiwan, Inst. Phys. /Argonne /Barcelona, IFAE /Baylor U. /INFN, Bologna /Bologna U. /Brandeis U. /UC, Davis /UCLA /UC, San Diego /UC, Santa Barbara

    2006-12-01

    The authors present a new measurement of the B{sup +} meson differential cross section d{sigma}/dP{sub T} at {radical}s = 1960 GeV. The data correspond to an integrated luminosity of 739 pb{sup -1} collected with the upgraded CDF detector (CDF II) at the Fermilab Tevatron collider. B{sup +} candidates are reconstructed through the decay B{sup +} {yields} J/{psi} K{sup +}, with J/{psi} {yields} {mu}{sup +}{mu}{sup -}. The integrated cross section for producing B{sup +} mesons with p{sub T} {ge} 6 GeV/c and |y| {le} 1 is measured to be 2.78 {+-} 0.24 {mu}b.

  3. Alternative Fuels Data Center: GE Showcases Innovation in Alternative Fuel

    Alternative Fuels and Advanced Vehicles Data Center

    Vehicles GE Showcases Innovation in Alternative Fuel Vehicles to someone by E-mail Share Alternative Fuels Data Center: GE Showcases Innovation in Alternative Fuel Vehicles on Facebook Tweet about Alternative Fuels Data Center: GE Showcases Innovation in Alternative Fuel Vehicles on Twitter Bookmark Alternative Fuels Data Center: GE Showcases Innovation in Alternative Fuel Vehicles on Google Bookmark Alternative Fuels Data Center: GE Showcases Innovation in Alternative Fuel Vehicles on

  4. Le Flore County, Oklahoma: Energy Resources | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    Zone Subtype A. Places in Le Flore County, Oklahoma Arkoma, Oklahoma Bokoshe, Oklahoma Cameron, Oklahoma Cowlington, Oklahoma Fanshawe, Oklahoma Fort Coffee, Oklahoma Heavener,...

  5. Le Prata Geothermal Power Station | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    Station General Information Name Le Prata Geothermal Power Station Sector Geothermal energy Location Information Location Tuscany, Italy Geothermal Resource Area Larderello...

  6. City of Le Sueur, Minnesota (Utility Company) | Open Energy Informatio...

    Open Energy Information (Open El) [EERE & EIA]

    Sueur, Minnesota (Utility Company) Jump to: navigation, search Name: Le Sueur City of Place: Minnesota Phone Number: (507) 665-3338 Website: mmpa.org Twitter: @lesueurmn Facebook:...

  7. Tech Digest July 2013 | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Tech Digest-July 2013 Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Tech Digest-July 2013 Catch up on some of the latest technological developments at GE Global Research. You Might Also Like Machine Nirvana: How GE Is Using AI To Build A Powerhouse Of Knowledge » Olympics Rio 2016 Olympic Games' technologies »

  8. Brazil Technology Center | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Biofuels Research at GE's Brazil Technology Center Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Biofuels Research at GE's Brazil Technology Center Clayton Zabeu, leader of Brazil Technology Center's Biofuels Center of Excellence, talks about the main objectives of the research programs that will drive the development

  9. Licensing Our Technology | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Teaming Up With Idea Works Puts Our Tech Into the World Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Teaming Up With Idea Works Puts Our Tech Into the World GE Idea Works is extending the reach of our technology by connecting GE's internal intellectual property, technology and resources with the external world. With

  10. Design of a GaAs/Ge solar array for unmanned aerial vehicles

    SciTech Connect (OSTI)

    Scheiman, D.A.; Colozza, A.J.; Brinker, D.J.; Bents, D.J.

    1994-12-31

    Unmanned Aerial Vehicles (UAV) are being proposed for many applications including surveillance, mapping and atmospheric studies. These applications require a lightweight, low speed, medium to long duration airplane. Due to the weight, speed, and altitude constraints imposed on such aircraft, solar array generated electric power is a viable alternative to air-breathing engines. Development of such aircraft is currently being funded under the Environmental Research Aircraft and Sensor Technology (ERAST) program. NASA Lewis Research Center (LeRC) is currently building a Solar Electric Airplane to demonstrate UAV technology. This aircraft utilizes high efficiency Applied Solar Energy Corporation (ASEC) GaAs/Ge space solar cells. The cells have been provided by the Air Force through the ManTech Office. Expected completion of the plane is early 1995, with the airplane currently undergoing flight testing using battery power.

  11. Design of a GaAs/Ge solar array for unmanned aerial vehicles

    SciTech Connect (OSTI)

    Scheiman, D.A.; Brinker, D.J.; Bents, D.J.; Colozza, A.J.

    1995-03-01

    Unmanned Aerial Vehicles (UAV) are being proposed for many applications including surveillance, mapping and atmospheric studies. These applications require a lightweight, low speed, medium to long duration airplane. Due to the weight, speed, and altitude constraints imposed on such aircraft, solar array generated electric power is a viable alternative to air-breathing engines. Development of such aircraft is currently being funded under the Environmental Research Aircraft and Sensor Technology (ERAST) program. NASA Lewis Research Center (LeRC) is currently building a Solar Electric Airplane to demonstrate UAV technology. This aircraft utilizes high efficiency Applied Solar Energy Corporation (ASEC) GaAs/Ge space solar cells. The cells have been provided by the Air Force through the ManTech Office. Expected completion of the plane is early 1995, with the airplane currently undergoing flight testing using battery power.

  12. Evaluation of Metal Halide, Plasma, and LED Lighting Technologies for a Hydrogen Fuel Cell Mobile Light (H 2 LT)

    SciTech Connect (OSTI)

    Miller, L. B.; Donohoe, S. P.; Jones, M. H.; White, W. A.; Klebanoff, L. E.; Velinsky, S. A.

    2015-04-22

    This article reports on the testing and comparison of a prototype hydrogen fuel cell light tower (H2LT) and a conventional diesel-powered metal halide light trailer for use in road maintenance and construction activities. The prototype was originally outfitted with plasma lights and then with light-emitting diode (LED) luminaires. Light output and distribution, lighting energy efficiency (i.e., efficacy), power source thermal efficiency, and fuel costs are compared. The metal halide luminaires have 2.2 and 3.1 times more light output than the plasma and LED luminaires, respectively, but they require more power/lumen to provide that output. The LED luminaires have 1.6 times better light efficacy than either the metal halide or plasma luminaires. The light uniformity ratios produced by the plasma and LED towers are acceptable. The fuel cell thermal efficiency at the power required to operate the plasma lights is 48%, significantly higher than the diesel generator efficiency of 23% when operating the metal halide lights. Due to the increased efficiency of the fuel cell and the LED lighting, the fuel cost per lumen-hour of the H2LT is 62% of the metal halide diesel light tower assuming a kilogram of hydrogen is twice the cost of a gallon of diesel fuel.

  13. GE launches 'STEM empowers OK' initiative in Oklahoma City | GE Global

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Research GE, OCAST and OSSM Partner to Launch "STEM Empowers OK" Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE, OCAST and OSSM Partner to Launch "STEM Empowers OK" stem empowers ok GE Foundation donates $400,000 to enhance STEM education initiatives across Oklahoma STEM Empowers OK to

  14. Science and BBQ: GE makes its mark, and bark, at SXSW | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    and BBQ: GE makes its mark ... and bark! Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Science and BBQ: GE makes its mark ... and bark! Lynn DeRose 2015.03.20 This is the fifth in a five-part series of dispatches from GE's Science of Barbecue Experience at South by Southwest. Our state-of-the-art Brilliant

  15. Who Is Jim Bray, GE Stump the Scientist? | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Who Is Jim Bray, GE Stump the Scientist? Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Who Is Jim Bray, GE Stump the Scientist? 2012.05.30 Chief Scientist Jim Bray introduces himself and talks about his work and time at GE. 0 Comments Comment Name Email Submit Comment

  16. GE Announces Vic Abate as New Chief Technology Officer | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Names Vic Abate New Chief Technology Officer; Succeeds Mark Little Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Names Vic Abate New Chief Technology Officer; Succeeds Mark Little Vic Abate, President and CEO of GE's Power Generation business, to succeed Mark Little and continue GE's leadership in the Digital

  17. GE Scientists Source Best Ideas at hackMIT | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Scientists Source Best Ideas at hackMIT Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Scientists Source Best Ideas at hackMIT Joseph Salvo 2013.10.03 At MIT they're serious about "hacking" together ideas for innovation, invention, and new businesses. This weekend a team from GE Global Research and GE

  18. New GE Research Center Deploys Science To Lift Oil And Gas | GE Global

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Research GE Research Center Deploys Science To Lift Oil And Gas Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) New GE Research Center Deploys Science To Lift Oil And Gas Valerie Van Den Keybus 2016.10.05 On October 5, GE celebrated the grand opening of its newest Global Research Center, the Oil & Gas Technology

  19. Synthesis and structural characterization of the new clathrates K8Cd4Ge42, Rb8Cd4Ge42, and Cs8Cd4Ge42

    DOE PAGES-Beta [OSTI]

    Schafer, Marion; Bobev, Svilen

    2016-03-25

    This paper presents results from our exploratory work in the systems K-Cd-Ge, Rb-Cd-Ge, and Cs-Cd-Ge, which yielded the novel type-I clathrates with refined compositions K8Cd3.77(7)Ge42.23, Rb8Cd3.65(7)Ge42.35, and Cs7.80(1)Cd3.65(6)Ge42.35. The three compounds represent rare examples of clathrates of germanium with the alkali metals, where a d10 element substitutes a group 14 element. The three structures, established by single-crystal X-ray diffraction, indicate that the framework-building Ge atoms are randomly substituted by Cd atoms on only one of the three possible crystallographic sites. Furthermore, this and several other details of the crystal chemistry are elaborated.

  20. Phase transitions in Ge-Sb phase change materials

    SciTech Connect (OSTI)

    Raoux, Simone; Virwani, Kumar; Hitzbleck, Martina; Salinga, Martin; Madan, Anita; Pinto, Teresa L.

    2009-03-15

    Thin films of the phase change material Ge-Sb with Ge concentrations between 7.3 and 81.1 at. % were deposited by cosputtering from elemental targets. Their crystallization behavior was studied using time-resolved x-ray diffraction, Auger electron spectroscopy, differential scanning calorimetry, x-ray reflectivity, profilometry, optical reflectivity, and resistivity versus temperature measurements. It was found that the crystallization temperature increases with Ge content. Calculations of the glass transition temperature (which is a lower limit for the crystallization temperature T{sub x}) also show an increase with Ge concentration closely tracking the measured values of T{sub x}. For low Ge content samples, Sb x-ray diffraction peaks occurred during a heating ramp at lower temperature than Ge diffraction peaks. The appearance of Ge peaks is related to Ge precipitation and agglomeration. For Ge concentrations of 59.3 at. % and higher, Sb and Ge peaks occurred at the same temperature. Upon crystallization, film mass density and optical reflectivity increase as well as electrical contrast (ratio of resistivity in amorphous phase to crystalline phase) all showed a maximum for the eutectic alloy (14.5 at. % Ge). For the alloy with 59.3 at. % Ge there was very little change in any of these parameters, while the alloy with 81.1 at. % Ge behaved opposite to a typical phase change alloy and showed reduced mass density and reflectivity and increased resistivity.

  1. GE Lighting Solutions: Order (2013-SE-4901)

    Energy.gov [DOE]

    DOE ordered General Electric Lighting Solutions, LLC to pay a $5,360 civil penalty after finding GE Lighting Solutions had manufactured and distributed in commerce in the U.S. 30 units of basic model DR4-RTFB-23B and 177 units (of which 85 units remain in inventory) of basic model DR4-RTFB-77A-002, noncompliant traffic signal modules.

  2. VEA-0016- In the Matter of GE Appliances

    Energy.gov [DOE]

    Sub-Zero Freezer Co. (Sub-Zero), GE Appliances (GE), and Whirlpool Corporation (Whirlpool) filed appeals of our November 3, 2000 decision, granting Viking Range Corporation (Viking) a six-month...

  3. Intern Shares Insight Into Researchers' Minds |GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    (Opens in new window) The Quality of GE Researchers...and Why That's So Important Daniel Cadel 2014.08.14 GE Global Research asked some of our interns to share why they wanted...

  4. Nanotextured Anti-Icing Surfaces | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Demonstrate Promising Anti-icing Nano Surfaces Click to email this to a friend (Opens in ... GE Scientists Demonstrate Promising Anti-icing Nano Surfaces GE Global Research today ...

  5. "Big Picture" Process Modeling Tools |GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Using process modeling tools to attain cost-effective results for GE customers Click to ... Using process modeling tools to attain cost-effective results for GE customers Jimmy Lopez ...

  6. GE launches 'STEM empowers OK' initiative in Oklahoma City |...

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    GE Foundation donates 400,000 to enhance STEM education initiatives across Oklahoma STEM Empowers OK to sponsor week-long, GE Summer Science Academy at OSSM for Oklahoma students ...

  7. Future of 3D Printing | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    In 2016, GE will enter a new jet engine into service called the CFM LEAP-the first in GE's line to incorporate 3D-printed parts. Specifically, it will be a combustion component ...

  8. Leptogenesis via the 750 GeV pseudoscalar (Journal Article) ...

    Office of Scientific and Technical Information (OSTI)

    Leptogenesis via the 750 GeV pseudoscalar Citation Details In-Document Search This content will become publicly available on June 6, 2017 Title: Leptogenesis via the 750 GeV ...

  9. GE Store for Technology is Open for Business | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    this way. The GE Store is a place where every business can come for technologies, product development and services that no one else can provide. The work of our researchers ties...

  10. Strain and stability of ultrathin Ge layers in Si/Ge/Si axial heterojunction nanowires

    DOE PAGES-Beta [OSTI]

    Ross, Frances M.; Stach, Eric A.; Wen, Cheng -Yen; Reuter, Mark C.; Su, Dong

    2015-02-05

    The abrupt heterointerfaces in the Si/Ge materials system presents useful possibilities for electronic device engineering because the band structure can be affected by strain induced by the lattice mismatch. In planar layers, heterointerfaces with abrupt composition changes are difficult to realize without introducing misfit dislocations. However, in catalytically grown nanowires, abrupt heterointerfaces can be fabricated by appropriate choice of the catalyst. Here we grow nanowires containing Si/Ge and Si/Ge/Si structures respectively with sub-1nm thick Ge "quantum wells" and we measure the interfacial strain fields using geometric phase analysis. Narrow Ge layers show radial strains of several percent, with a correspondingmore » dilation in the axial direction. Si/Ge interfaces show lattice rotation and curvature of the lattice planes. We conclude that high strains can be achieved, compared to what is possible in planar layers. In addition, we study the stability of these heterostructures under heating and electron beam irradiation. The strain and composition gradients are supposed to the cause of the instability for interdiffusion.« less

  11. Similarity of Stranski-Krastanow growth of Ge/Si and SiGe/Si (001)

    SciTech Connect (OSTI)

    Norris, D. J.; Qiu, Y.; Walther, T.; Dobbie, A.; Myronov, M.

    2014-01-07

    This study investigates the onset of islanding (Stranski-Krastanow transition) in strained pure germanium (Ge) and dilute silicon-germanium (SiGe) alloy layers grown by chemical vapour deposition on Si(001) substrates. Integration of compositional profiles is compared to a novel method for quantification of X-ray maps acquired in cross-sectional scanning transmission electron microscopy, together with simulations of surface segregation of Ge. We show that Si{sub 1−x}Ge{sub x} alloys for germanium concentrations x ≤ 0.27 grow two-dimensionally and stay flat up to considerable layer thicknesses, while layers with concentrations in the range 0.28 < x ≤ 1 form islands after deposition of ∼3.0/x monolayers (=quarter unit cells in the diamond lattice, ML). The uncertainty in the amount of deposited material for pure Ge is ±(0.2–0.3) ML. Modelling shows that of the amount of germanium deposited, 0.7 ML segregate towards the free surface so that only ∼2.3/x ML are directly incorporated in the layer within a few nanometres, in good agreement with our measurements. For pure Ge (x = 1), this thickness is smaller than most values quoted in the literature, which we attribute to the high sensitivity of our method to fractional monolayer changes in the effective chemical width of such thin layers.

  12. Ba{sub 6}Ge{sub 25}: low-temperature Ge-Ge bond breaking during temperature-induced structure transformation

    SciTech Connect (OSTI)

    Carrillo-Cabrera, Wilder . E-mail: carrillo@cpfs.mpg.de; Borrmann, Horst; Paschen, Silke; Baenitz, Michael; Steglich, Frank; Grin, Yuri

    2005-03-15

    In order to find the optimal conditions for sample preparation of the binary germanide Ba{sub 6}Ge{sub 25}, the germanium-rich part of the Ba-Ge phase diagram was redetermined by means of metallography, X-ray powder diffraction and differential thermal analysis. The temperature behavior of cubic Ba{sub 6}Ge{sub 25} was investigated both on polycrystalline samples and single crystals. The temperature dependence of the lattice parameter exhibits two anomalies at about 180 and 230K, respectively, which are caused by a structure transformation in two steps with hysteresis. Powder (T=10-295K) and single-crystal (T=95-295K) X-ray diffraction studies confirm that the symmetry of Ba{sub 6}Ge{sub 25} (space group P4{sub 1}32) remains unchanged within the entire temperature range. A reconstructive behavior of the structural transformation is observed, involving Ge-Ge bond breaking and barium cation displacements. Some Ge4 type atoms ({approx}28%) are so significantly displaced during cooling that Ge4-Ge6 bonds break and new three-bonded (3b)Ge{sup -} species (electron acceptors) are formed. Consequently, the number of charge carriers is reduced, affecting the physical properties. The reversible bond breaking involved in this process is a typical characteristic of a solid-state chemical reac0010ti.

  13. GE Appliances: Order (2012-SE-1403) | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Appliances: Order (2012-SE-1403) GE Appliances: Order (2012-SE-1403) October 3, 2012 DOE ordered GE Appliances, a Division of General Electric Company to pay a $63,000 civil penalty after finding GE had privately labeled and distributed in commerce in the U.S. the 4-cubic-foot capacity refrigerator basic model SMR04GAZCS, which includes models SMR04GAZACS and SMR04GAZBCS. The Order adopted a Compromise Agreement, which reflected settlement terms between DOE and GE. GE Appliances: Order

  14. Impact of Technology | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    IMPACT The needs of the world inspire us to create technologies to build, connect, cure, move and power the world around us. I Want to See Game-Changing Technology Work & Life Cool Science STEM Education Most Popular Shuffle Information for Me Game-Changing Technology Work & Life Cool Science STEM Education Most Popular Shuffle Micro Computed Tomography in Materials Characterization » Legendary Vision See where our leaders are taking us. The Dirt on the Cleanroom » Immelt: GE stands at

  15. membrane-ge | netl.doe.gov

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Bench-Scale High-Performance Thin Film Composite Hollow Fiber Membranes for Post-Combustion Carbon Dioxide Capture Project No.: DE-FE0007514 GE Global Research is developing high performance thin film polymer composite hollow fiber membranes and advanced processes for economical post-combustion carbon dioxide (CO2) capture from pulverized coal flue gas at temperatures typical of existing flue gas cleanup processes. The project will optimize the novel membranes at the bench scale, including

  16. 12 GeV Upgrade | Jefferson Lab

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    12 GeV Upgrade Physicists at Jefferson Lab are trying to find answers to some of nature's most perplexing questions about the universe by exploring the nucleus of the atom. Their goal is to answer such questions as: "What is the universe made of?" and "What holds everyday matter together?" In their search for answers, physicists smash electrons into atoms using Jefferson Lab's Continuous Electron Beam Accelerator Facility. CEBAF provides physicists with an unprecedented

  17. What Is MEMS? | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Engineer Chris Keimel Introduces MEMS Technology Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Engineer Chris Keimel Introduces MEMS Technology GE engineer Chris Keimel gives a brief overview of microelectromechanical systems (MEMS), tiny devices that control the electronics and sensing capability in many of today's

  18. Zero Liquid Discharge Technology | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Reverse Osmosis (RO) Membrane Technology Purifies Water Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Reverse Osmosis (RO) Membrane Technology Purifies Water GE's Reverse Osmosis (RO) Membrane technology addresses industrial waste water treatment and recycling needs, purifying water for cooling, boilers, and general

  19. Prompt Gamma Rays in {sup 77}Ge after Neutron Capture on {sup 76}Ge

    SciTech Connect (OSTI)

    Meierhofer, Georg; Grabmayr, Peter; Jochum, Josef [Physikalisches Institut, Eberhard Karls Universitaet Tuebingen, Auf der Morgenstelle 14, 72076 Tuebingen (Germany); Canella, Lea [Institut fuer Radiochemie, Technische Universitaet Muenchen, Walther-Meissner-Str. 3, 85748 Garching (Germany); Jolie, Jan; Kudejova, Petra; Warr, Nigel [Institut fuer Kernphysik, Universitaet zu Koeln, Zuelpicher Str. 77, 50937 Cologne (Germany)

    2009-01-28

    The observation of neutrinoless double beta decay would be proof of the Majorana nature of the neutrino. Half-lives for these decays are very long (for {sup 76}Ge:>10{sup 25} y), so background reduction and rejection is the major task for double beta experiments. The GERDA (GERmanium Detector Array) experiment at the Gran Sasso Laboratory of the INFN (LNGS) searches for neutrinoless double beta decay of {sup 76}Ge. The isotope {sup 76}Ge is an ideal candidate because it can be used as source and detector at the same time. A large remaining contribution to the background arises from the prompt gamma cascade after neutron capture by {sup 76}Ge followed by {beta}{sup -}-decay of {sup 77}Ge. Since the prompt gamma decay scheme is poorly known, measurements with isotopically enriched Germanium samples were carried out at the PGAA facility at the research reactor FRM II (Munich). With the known prompt gamma spectrum it will be possible to improve the overall veto efficiency of the GERDA experiment.

  20. Computers as Scientific Peers | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Computers as Intellectual Peers in Scientific Research Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Computers as Intellectual Peers in Scientific Research Emily LeBlanc 2015.09.03 One of the most exciting futurist notions is a machine that can think like a human. Although we are not presently able to have true

  1. Elimination of GeO(2) And Ge(3)N(4) Interfacial Transition Regions And Defects at N-Type Ge Interfaces: a Pathway for Formation of N-MOS Devices on Ge Substrates

    SciTech Connect (OSTI)

    Lucovsky, G.; Lee, S.; Long, J.P.; Seo, H.; Luning, J.

    2009-05-19

    The contribution from relatively low-K SiON interfacial transition regions (ITRs) between Si and transition metal (TM) gate dielectrics places a significant limitation on equivalent oxide thickness (EOT) scaling for Si complementary metal-oxide-semiconductor (CMOS) devices. This limitation is equally significant and limiting for Ge CMOS devices. Low-K Ge-based ITRs in Ge devices have also been shown to limit performance and reliability, particular for n-MOS field effect transistors. This article identifies the source of significant electron trapping at interfaces between n-Ge or inverted p-Ge, and Ge oxide, nitride and oxynitride ITRs. This is shown to be an interfacial band alignment issue in which native Ge ITRs have conduction band offset energies smaller than those of TM dielectrics, and trap electrons for negative Ge substrate bias. This article also describes a novel remote plasma processing approach for effectively eliminating any significant native Ge ITRs and using a plasma-processing/annealing process sequence for bonding TM gate dielectrics directly to the Ge substrate surface.

  2. Archea ME LE Anlagenbau GmbH | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    Archea ME-LE Anlagenbau GmbH is a JV set up to manufacture and construct Archea biogas plants. Coordinates: 53.629674, 14.010779 Show Map Loading map......

  3. GE and Maker Faire Are a Match Made in Nerd Heaven | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    and Maker Faire Are a Match Made in Nerd Heaven Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE and Maker Faire Are a Match Made in Nerd Heaven Peter Tu 2011.06.06 This year GE was a sponsor of the spring version of Maker Faire held out in San Francisco. Our main contributions to the festivities consisted of a

  4. GE funds initiative to support STEM initiatives in Oklahoma | GE Global

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Research STEM Empowers OK: Initiative to enrich STEM education in Oklahoma Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) STEM Empowers OK: Initiative to enrich STEM education in Oklahoma On April 21, 2015, GE announced a grant to the state of Oklahoma to enhance STEM education initiatives. Jeff Immelt, GE's

  5. Construction progresses at GE's Oil & Gas Technology Center | GE Global

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Research Home > Impact > Construction progressing at GE's newest research center, the Oil & Gas Technology Center in Oklahoma City Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Construction progressing at GE's newest research center, the Oil & Gas Technology Center in Oklahoma City Construction is

  6. GE's Arnie Lund Discusses User Experience at an Industrial Scale | GE

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Global Research Arnie Lund Discusses User Experience at an Industrial Scale Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE's Arnie Lund Discusses User Experience at an Industrial Scale Arnie Lund, manager of the UX Industrial Innovation Lab at GE Global Research in San Ramon, Calif, recently spoke to the

  7. Recovery Act Helps GE in-source Manufacturing | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Recovery Act Helps GE in-source Manufacturing Recovery Act Helps GE in-source Manufacturing September 30, 2010 - 2:21pm Addthis The Geospring Hybrid Water Heater will be produced at GE's Appliance Park in Louisville. | Photo courtesy of GE The Geospring Hybrid Water Heater will be produced at GE's Appliance Park in Louisville. | Photo courtesy of GE Lindsay Gsell GE has a long history in Louisville, Ky. The company's appliance and lighting facility in Louisville has been manufacturing appliances

  8. Hi there, fellow! | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Hi there, fellow! Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Hi there, fellow! IMG_7595 Back in June, Dr. Aaron Knobloch was named a Fellow of the American Society of Mechanical Engineers (ASME) in a ceremony held at GE's research center in Niskayuna, NY. The award was presented by Prof. Mina Pelegri of Rutgers

  9. Jim Bray Interview | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Behind the Scenes with Chief Scientist Jim Bray Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Behind the Scenes with Chief Scientist Jim Bray 2013.04.25 Chief Scientist Jim Bray talks about technology milestones, his career and his life at and away from GE. 0 Comments Comment Name Email Submit Comment You Might Also

  10. Rodrigo Rodriguez Erdmenger | Inventors | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Rodrigo Rodriguez Erdmenger Rodrigo Rodriguez Erdmenger Research Engineer Turbomachinery Aero Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) "What fuels my passion for work is knowing that I can impact the technology of GE products and lives of people all over the world." -Rodrigo Rodriguez Erdmenger Ask

  11. Advanced Propulsion Systems | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    CFM LEAP Aircraft Engines Are Fuel- and Cost-Efficient Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) CFM LEAP Aircraft Engines Are Fuel- and Cost-Efficient The new LEAP engine, developed by CFM, has literally taken leaps in engine innovation in both fuel and cost efficiency. Scheduled to enter service in 2016, GE in

  12. Masako Yamada | Inventors | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Masako Yamada Masako Yamada Manager Advanced Computing Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) "I believe individuals should be given the chance to reinvent themselves. Recently, I've reinvented myself as a supercomputing person-again." -Masako Yamada Masako began her career at GE in applied optics,

  13. GE Global Research in Bangalore, India

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Bangalore, India Bangalore, India The first GE Research & Development Center outside the U.S. applies cutting-edge technologies to solve challenges across the first and developing worlds. Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Visit the Careers page to search and apply for Global Research jobs in Bangalore.

  14. GE Global Research in Oklahoma City

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Oklahoma City, USA Oklahoma City, USA GE's first sector-specific global research center is dedicated to developing and accelerating innovative oil and gas technologies. Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Visit the Careers page to search and apply for Global Research jobs in Oklahoma City. We also welcome

  15. Unit cell of strained GeSi

    SciTech Connect (OSTI)

    Woicik, J.C.; Bouldin, C.E.; Miyano, K.E.; King, C.A.

    1997-06-01

    The local structure within the unit cell of strained-GeSi layers grown on Si(001) has been examined by polarization-dependent extended x-ray-absorption fine structure. First-neighbor bond lengths are found to deviate only slightly from their unstrained values; however, the distortion of the cubic-unit cell by strain leads to measurable polarization-dependent changes in first-shell coordination and second-shell distances. A unifying picture of bond lengths and elasticity in strained-layer semiconductors is presented. {copyright} {ital 1997} {ital The American Physical Society}

  16. Steven M. Gustafson | Inventors | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Steven Gustafson Steven Gustafson Knowledge Discovery Laboratory Manager Computational Sciences & Architectures Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) "I love solving hard problems, the large-scale engineering challenges GE takes on and working with passionate, driven people. I'm lucky to have all

  17. Thermal Imaging Technologies | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Advanced Thermal Imaging Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Butterfly-Inspired Design Enables Advanced Thermal Imaging Bryan Whalen in the Electronics Cooling Lab at GE Global Research recorded this thermo graphic video of a Morpho butterfly structure in response to heat pulses produced by breathing onto

  18. Ideas Are Scary | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Ideas Are Scary Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Ideas Are Scary Ideas are scary, messy, and fragile, but under the proper care, they become something beautiful. GE is a place where ideas are nurtured and brought to life through innovations that make the world better. You Might Also Like

  19. GE Showcases Digital Industrial Technologies and Impels Open Innovation at

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    2016 TECHfest | GE Global Research Showcases Digital Industrial Technologies and Impels Open Innovation at 2016 TECHfest Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Showcases Digital Industrial Technologies and Impels Open Innovation at 2016 TECHfest GE China Technology Center teams up with Zhangjiang

  20. Testimonials - Partnerships in Fuel Cells - GE Global Research |

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Department of Energy Fuel Cells - GE Global Research Testimonials - Partnerships in Fuel Cells - GE Global Research Addthis Text Version The words "Office of Energy Efficiency & Renewable Energy, U.S. Department of Energy, EERE Partnership Testimonials," appear on the screen, followed by "Mark Little, Senior Vice President, GE Global Research" and footage of a man in a suit. Mark Little: Energy, manufacturing, innovation, and competitiveness are the core to the

  1. COLLOQUIUM: Future Electrical Technologies From a GE Viewpoint | Princeton

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Plasma Physics Lab 1, 2015, 4:00pm to 5:30pm Colloquia MBG Auditorium COLLOQUIUM: Future Electrical Technologies From a GE Viewpoint Dr. James Bray GE Global Research I will give a brief overview of the technologies being pursued within GE, the largest conglomerate. I will then focus more on the electrical technologies for a more detailed description. These will include new devices such as SiC MOSFETs, electrical systems, controls, electrical machines, superconducting equipment, medical

  2. Commissioning and Operation of 12 GeV CEBAF

    SciTech Connect (OSTI)

    Freyberger, Arne P.

    2015-09-01

    The Continuous Electron Beam Accelerator Facility (CEBAF) located at the Thomas Jefferson National Accelerator Laboratory (JLab) has been recently upgraded to deliver continuous electron beams to the experimental users at a maximum energy of 12 GeV, three times the original design energy of 4 GeV. This paper will present an overview of the upgrade, referred to as the 12GeV upgrade, and highlights from recent beam commissioning results.

  3. Optimal Ge/SiGe nanofin geometries for hole mobility enhancement: Technology limit from atomic simulations

    SciTech Connect (OSTI)

    Vedula, Ravi Pramod; Mehrotra, Saumitra; Kubis, Tillmann; Povolotskyi, Michael; Klimeck, Gerhard; Strachan, Alejandro

    2015-05-07

    We use first principles simulations to engineer Ge nanofins for maximum hole mobility by controlling strain tri-axially through nano-patterning. Large-scale molecular dynamics predict fully relaxed, atomic structures for experimentally achievable nanofins, and orthogonal tight binding is used to obtain the corresponding electronic structure. Hole transport properties are then obtained via a linearized Boltzmann formalism. This approach explicitly accounts for free surfaces and associated strain relaxation as well as strain gradients which are critical for quantitative predictions in nanoscale structures. We show that the transverse strain relaxation resulting from the reduction in the aspect ratio of the fins leads to a significant enhancement in phonon limited hole mobility (7× over unstrained, bulk Ge, and 3.5× over biaxially strained Ge). Maximum enhancement is achieved by reducing the width to be approximately 1.5 times the height and further reduction in width does not result in additional gains. These results indicate significant room for improvement over current-generation Ge nanofins, provide geometrical guidelines to design optimized geometries and insight into the physics behind the significant mobility enhancement.

  4. 3D Printing Aircraft Parts | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    in GE aircraft engines signals a paradigm shift that is happening with the emergence of additive manufacturing. Additive not only offers the opportunity to design parts never...

  5. Heteroepitaxial Ge-on-Si by DC magnetron sputtering

    SciTech Connect (OSTI)

    Steglich, Martin; Schrempel, Frank; Füchsel, Kevin; Kley, Ernst-Bernhard; Patzig, Christian; Berthold, Lutz; Höche, Thomas; Tünnermann, Andreas

    2013-07-15

    The growth of Ge on Si(100) by DC Magnetron Sputtering at various temperatures is studied by Spectroscopic Ellipsometry and Transmission Electron Microscopy. Smooth heteroepitaxial Ge films are prepared at relatively low temperatures of 380°C. Typical Stransky-Krastanov growth is observed at 410°C. At lower temperatures (320°C), films are essentially amorphous with isolated nanocrystallites at the Si-Ge interface. A minor oxygen contamination at the interface, developing after ex-situ oxide removal, is not seen to hinder epitaxy. Compensation of dislocation-induced acceptors in Ge by sputtering from n-doped targets is proposed.

  6. Secretary Chu Speaks at GE Solar Facility | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    GE Solar Facility Secretary Chu Speaks at GE Solar Facility November 18, 2011 - 1:19pm Addthis Secretary Steven Chu's remarks, as prepared for delivery, at the General Electric Solar Facility in Arvada, Colorado. Thank you, Fred [Seymour], for the introduction. GE is a leader in energy innovation. Thomas Edison, the father of GE, once said, "I'd put my money on the sun and solar energy. What a source of power!" I imagine he would be amazed by the solar technology that is tested here.

  7. Silicon Carbide (SiC) Technologies | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    at much higher frequencies and temperatures and convert electric power at higher efficiency or lower losses. ... Carbide Power Chip Fabrication Line GE is partnering with the SUNY ...

  8. Silicon Carbide in the Cleanroom | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Inside the GE Global Research Clean Room: Silicon Carbide Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Inside the GE Global Research Clean Room: Silicon Carbide GE Global Research is working on nanoscale silicon carbide devices. Find out what we're doing. You Might Also Like 2-1-10-v-working-at-ge-research The Dirt

  9. Big Data and Analytics at Work | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    time analytics is required At GE we keep pace with these trends via the Industrial Internet, a highly connected ecosystem of intelligent machines, advanced analytics and people...

  10. High-Speed Network Enables Industrial Internet | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    GE software scientists and developers to spur high-speed connectivity and access to really big data Disruptive innovation demonstrates industry success in creating viable test beds ...

  11. Predix and Robots in CT Systems | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Robots and Predix make Beijing's CT factory brilliant Guoshuang Cai 2015.04.16 GE Healthcare's Beijing plant is one of the largest factories producing computed tomography (CT) ...

  12. A Sneak Peek Into Santa's Smarter Sleigh | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    legs a break. - An upgraded sleigh frame made from GE's high temperature Ceramic Matrix Composites (CMCs). The CMCs can withstand the heat of entry and reentry in earth's...

  13. The Right Connections: Seeing the Future of Energy | GE Global...

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    renewable resources like wind, water, and sun, to distributing that power to home in smarter and more efficient ways, GE Global Research can see the entire energy ecosystem. ...

  14. Unimpossible Missions: The University Edition | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    to Change the Paradigm of Manufacturing be an engineer Women Engineers Urge Young Girl to Pursue Engineering From GE Global Research https:twitter.comGEResearch ...

  15. The Wizard of Schenectady: Charles Proteus Steinmetz | GE Global...

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    week the Smithsonian's "Past Imperfect" blog highlighted a man near and dear to the heart of GE Global Research, Charles Proteus Steinmetz. The article paints a really...

  16. Discovering Social Invention With MAKE | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    ... Real World in 10 Years primusenginefeaturedimage3 GE Innovation and Manufacturing in Europe MEMSVertical Next-gen RF MEMS Switch for a Smarter, Faster Internet of Things

  17. GE China Technology Center Wins Top 12 Most Innovative Practices...

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    China Technology Center Wins Top 12 Most Innovative Practices Award of "Multinational ... GE China Technology Center Wins Top 12 Most Innovative Practices Award of "Multinational ...

  18. Advanced Technology & Discovery at Munich | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Technology & Discovery at Munich Technology & Discovery at Munich Interact with groundbreaking scientific and technological solutions across nearly all industries at GE's hub in ...

  19. Scientists Develop Sensors Based on Butterfly Wings | GE Global...

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Potyrailo assembled a team funded by DARPA's program on Bio Inspired Photonics, which is now complete, to design and fabricate new sensors. The team included scientists from GE ...

  20. GE Software Expert Julian Keith Loren Discusses Innovation and the

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Industrial Internet | GE Global Research GE Software Expert Julian Keith Loren Discusses Innovation and the Industrial Internet Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Software Expert Julian Keith Loren Discusses Innovation and the Industrial Internet Julian Keith Loren, a senior product manager at GE

  1. Engineers Named to National Academy | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    3 GE Engineers Elected to National Academy of Engineering Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) 3 GE Engineers Elected to National Academy of Engineering GE (NYSE: GE) announced today that three distinguished engineers, one from the company's Global Research Center, and two from its Aviation business, have

  2. Invention Factor: How Will The World Get Smaller | GE Global...

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    is changing the manufacturing process for jet engines and opening up the world of air ... to the Real World in 10 Years primusenginefeaturedimage3 GE Innovation and ...

  3. EEDP and Other Leadership Programs | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Ready to dive in? Apply for the program. GE Software Leadership Program The rise of the Industrial Internet requires a new breed of talent and organizational capability. New...

  4. General Electric in India GE | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    navigation, search Name: General Electric in India (GE) Place: New Delhi, Delhi (NCT), India Zip: 110015 Sector: Services, Wind energy Product: String representation...

  5. Leptogenesis via the 750 GeV pseudoscalar (Journal Article) ...

    Office of Scientific and Technical Information (OSTI)

    Publisher's Accepted Manuscript: Leptogenesis via the 750 GeV pseudoscalar This content will become publicly available on June 6, 2017 Prev Next Title: Leptogenesis via the ...

  6. Data Science Makes Trains More Efficient | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Data Science Makes Trains More Efficient Click to email this to a friend (Opens in new ... Data Science Makes Trains More Efficient In this Special Report, GE's ...

  7. Structural and phonon transmission study of Ge-Au-Ge eutectically bonded interfaces

    SciTech Connect (OSTI)

    Knowlton, W.B. |

    1995-07-01

    This thesis presents a structural analysis and phonon transparency investigation of the Ge-Au-Ge eutectic bond interface. Interface development was intended to maximize the interfacial ballistic phonon transparency to enhance the detection of the dark matter candidate WIMPs. The process which was developed provides an interface which produces minimal stress, low amounts of impurities, and insures Ge lattice continuity through the interface. For initial Au thicknesses of greater than 1,000 {angstrom} Au per substrate side, eutectic epitaxial growth resulted in a Au dendritic structure with 95% cross sectional and 90% planar Au interfacial area coverages. In sections in which Ge bridged the interface, lattice continuity across the interface was apparent. Epitaxial solidification of the eutectic interface with initial Au thicknesses < 500 A per substrate side produced Au agglomerations thereby reducing the Au planar interfacial area coverage to as little as 30%. The mechanism for Au coalescence was attributed to lateral diffusion of Ge and Au in the liquid phase during solidification. Phonon transmission studies were performed on eutectic interfaces with initial Au thicknesses of 1,000 {angstrom}, 500 {angstrom}, and 300 {angstrom} per substrate side. Phonon imaging of eutectically bonded samples with initial Au thicknesses of 300 {angstrom}/side revealed reproducible interfacial percent phonon transmissions from 60% to 70%. Line scan phonon imaging verified the results. Phonon propagation TOF spectra distinctly showed the predominant phonon propagation mode was ballistic. This was substantiated by phonon focusing effects apparent in the phonon imaging data. The degree of interface transparency to phonons and resulting phonon propagation modes correlate with the structure of the interface following eutectic solidification. Structural studies of samples with initial Au thickness of 1,000 {angstrom}/side appear to correspond with the phonon transmission study.

  8. XAS/EXAFS studies of Ge nanoparticles produced by reaction between Mg{sub 2}Ge and GeCl{sub 4}

    SciTech Connect (OSTI)

    Pugsley, Andrew J.; Bull, Craig L.; Sella, Andrea; Sankar, Gopinathan; McMillan, Paul F.

    2011-09-15

    We present results of an XAS and EXAFS study of the synthesis of Ge nanoparticles formed by a metathesis reaction between Mg{sub 2}Ge and GeCl{sub 4} in diglyme (diethylene glycol dimethyl ether). The progress of the formation reaction and the products formed at various stages in the processing was characterised by TEM and optical spectroscopy as well as in situ XAS/EXAFS studies using specially designed reaction cells. - Graphical abstract: Nano-Ge particles 2-10 nm in diameter were prepared by reaction between Mg{sub 2}Ge Zintl phase and GeCl{sub 4} in diglyme followed by capping with BuLi and extraction into hexane. We used synchrotron X-ray absorption spectroscopy (XAS) at the Ge K edge with analysis of the EXAFS region combined with room temperature photoluminescence and TEM to characterise the nature of the nanoparticles and model compounds and to follow the course of the reaction. A TEM image of the germanium nanoparticles is shown. Highlights: > In situ characteristaion of germanium nanoparticles. > X-ray spectroscopic technique development. > Improving quality of nanoparticles grown by metathesis route.

  9. LtBlue-LessInk

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Council's Seventh Power Plan. * Focuses on the next six years and the priorities in the Plan (It's the interesting part of the Plan) B O N N E V I L L E P O W E R A D M I N I S T...

  10. LtBlue-LessInk

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    7 th Plan supply curve review and regional tool Brown Bag March 5, 2014 B O N N E V I L L E P O W E R A D M I N I S T R A T I O N 2 BACKGROUND DATA COLLECTION DATA ANALYSIS MARKET...

  11. LtBlue-LessInk

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Lighting Brown Bag: Updates & Feedback B O N N E V I L L E P O W E R A D M I N I S T R A T I O N Lighting Program Feedback What to do with: CFLs Induction Exit Signs...

  12. LtBlue-LessInk

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Resource Advisory Committee * Regional Technical Forum Members * Conservation Potential Assessment development across region 10 TECHNICAL TEAM EXPERIENCE B O N N E V I L L E P O...

  13. LT7484 2..5

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Current Sheet during Magnetic Reconnection in a Toroidal Plasma N. A. Crocker, G. Fiksel, S. C. Prager, and J. S. Sarff Department of Physics, University of Wisconsin, Madison, Wisconsin 53706 (Received 15 June 2000; published 21 January 2003) The current and magnetic-field fluctuations associated with magnetic-field-line reconnection have been measured in the reversed field pinch plasma configuration. The current sheet resulting from this reconnection has been measured. The current layer is

  14. LtBlue-LessInk

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Must replace existing 320w or 400w HIDs. Must qualify for either Measure H4-70% or H5-70%. New LED fixtures must be DLC or LDL listed or utility approved. Customized...

  15. LtBlue-LessInk

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Mean Levelized Cost IRRIGATION HARDWARE IRRIGATION WATER MGMT LIGHTING IRRIGATION MOTOR IRRIGATION PRESSURE IRRIGATION EFFICIENCY DAIRY 36 Economic Potential 0.2 0.7 0.7...

  16. 3 GeV Injector Design Handbook

    SciTech Connect (OSTI)

    Wiedemann, H.; /SLAC, SSRL

    2009-12-16

    This Design Handbook is intended to be the main reference book for the specifications of the 3 GeV SPEAR booster synchrotron project. It is intended to be a consistent description of the project including design criteria, key technical specifications as well as current design approaches. Since a project is not complete till it's complete changes and modifications of early conceptual designs must be expected during the duration of the construction. Therefore, this Design Handbook is issued as a loose leaf binder so that individual sections can be replaced as needed. Each page will be dated to ease identification with respect to latest revisions. At the end of the project this Design Handbook will have become the 'as built' reference book of the injector for operations and maintenance personnel.

  17. CHARACTERIZATION OF THE NEARBY L/T BINARY BROWN DWARF WISE J104915.57-531906.1 AT 2 pc FROM THE SUN

    SciTech Connect (OSTI)

    Kniazev, A. Y.; Vaisanen, P.; Potter, S. B.; Crawford, S.; Gulbis, A. A. S.; Muzic, K.; Mehner, A.; Boffin, H. M. J.; Melo, C.; Ivanov, V. D.; Girard, J.; Mawet, D.; Schmidtobreick, L.; Kurtev, R.; Borissova, J.; Huelamo, N.; Minniti, D.; Ishibashi, K.; Beletsky, Y.; Buckley, D. A. H.; and others

    2013-06-20

    WISE J104915.57-531906.1 is a L/T brown dwarf binary located 2 pc from the Sun. The pair contains the closest known brown dwarfs and is the third closest known system, stellar or sub-stellar. We report comprehensive follow-up observations of this newly uncovered system. We have determined the spectral types of both components (L8 {+-} 1, for the primary, agreeing with the discovery paper; T1.5 {+-} 2 for the secondary, which was lacking spectroscopic type determination in the discovery paper) and, for the first time, their radial velocities (V{sub rad} {approx} 23.1, 19.5 km s{sup -1}) using optical spectra obtained at the Southern African Large Telescope and other facilities located at the South African Astronomical Observatory (SAAO). The relative radial velocity of the two components is smaller than the range of orbital velocities for theoretically predicted masses, implying that they form a gravitationally bound system. We report resolved near-infrared JHK{sub S} photometry from the Infrared Survey Facility telescope at the SAAO which yields colors consistent with the spectroscopically derived spectral types. The available kinematic and photometric information excludes the possibility that the object belongs to any of the known nearby young moving groups or associations. Simultaneous optical polarimetry observations taken at the SAAO 1.9 m give a non-detection with an upper limit of 0.07%. For the given spectral types and absolute magnitudes, 1 Gyr theoretical models predict masses of 0.04-0.05 M{sub Sun} for the primary, and 0.03-0.05 M{sub Sun} for the secondary.

  18. Thomas J. LeCompte | Argonne National Laboratory

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    J. LeCompte Physicist & Group Leader, HEP Computing Tom LeCompte received his PhD from Northwestern in 1992 and his SB from MIT in 1985. He is an experimenter in particle physics, and has held a number of leadership roles on the CDF experiment at Fermilab and the ATLAS experiment at CERN's Large Hadron Collider, most recenly being Physics Coordinator for ATLAS. He is interested in searching for new phenomenon via precision measurements of Standard Model processes, and in simulating these

  19. GeO{sub 2}/Ge structure submitted to annealing in deuterium: Incorporation pathways and associated oxide modifications

    SciTech Connect (OSTI)

    Bom, N. M.; Soares, G. V.; Hartmann, S.; Bordin, A.; Radtke, C.

    2014-10-06

    Deuterium (D) incorporation in GeO{sub 2}/Ge structures following D{sub 2} annealing was investigated. Higher D concentrations were obtained for GeO{sub 2}/Ge samples in comparison to their SiO{sub 2}/Si counterparts annealed in the same conditions. Oxygen vacancies produced during the annealing step in D{sub 2} constitute defect sites for D incorporation, analogous to defects at the SiO{sub 2}/Si interfacial region. Besides D incorporation, volatilization of the oxide layer is also observed as a consequence of D{sub 2} annealing, especially in the high temperature regime of the present study (>450?C). In parallel to this volatilization, the stoichiometry and chemical structure of remnant oxide are modified as well. These results evidence the broader impact of forming gas annealing in dielectric/Ge structures with respect to SiO{sub 2}/Si counterparts.

  20. Transient and temperature-dependent phenomena in Ge:Be and Ge:Zn far infrared photoconductors

    SciTech Connect (OSTI)

    Haegel, N.M.

    1985-11-01

    An experimental study of the transient and temperature-dependent behavior of Ge:Be and Ge:Zn photoconductors has been performed under the low background photon flux conditions (p dot approx. = 10/sup 8/ photons/second) typical of astronomy and astrophysics applications. The responsivity of Ge:Be and Ge:Zn detectors is strongly temperature-dependent in closely compensated material, and the effect of compensation on free carrier lifetime in Ge:Be has been measured using the photo-Hall effect technique. Closely compensated material has been obtained by controlling the concentration of novel hydrogen-related shallow acceptor complexes, A(Be,H) and A(Zn,H), which exist in doped crystals grown under a H/sub 2/ atmosphere. A review of selection criteria for multilevel materials for optimum photoconductor performance is included. 55 refs., 47 figs.

  1. Ion beam synthesis of SiGe alloy layers

    SciTech Connect (OSTI)

    Im, Seongil

    1994-05-01

    Procedures required for minimizing structural defects generated during ion beam synthesis of SiGe alloy layers were studied. Synthesis of 200 mm SiGe alloy layers by implantation of 120-keV Ge ions into <100> oriented Si wafers yielded various Ge peak concentrations after the following doses, 2{times}10{sup 16}cm{sup {minus}2}, 3{times}10{sup 16}cm{sup {minus}2} (mid), and 5{times}10{sup 16}cm{sup {minus}2} (high). Following implantation, solid phase epitaxial (SPE) annealing in ambient N2 at 800C for 1 hr. resulted in only slight redistribution of the Ge. Two kinds of extended defects were observed in alloy layers over 3{times}l0{sup 16}cm{sup {minus}2}cm dose at room temperature (RT): end-of-range (EOR) dislocation loops and strain-induced stacking faults. Density of EOR dislocation loops was much lower in alloys produced by 77K implantation than by RT implantation. Decreasing the dose to obtain 5 at% peak Ge concentration prevents strain relaxation, while those SPE layers with more than 7 at% Ge peak show high densities of misfit- induced stacking faults. Sequential implantation of C following high dose Ge implantation (12 at% Ge peak concentration in layer) brought about a remarkable decrease in density of misfit-induced stacking faults. For peak implanted C > 0.55 at%, stacking fault generation in the epitaxial layer was suppressed, owing to strain compensation by C atoms in the SiGe lattice. A SiGe alloy layer with 0.9 at% C peak concentration under a 12 at% Ge peak exhibited the best microstructure. Results indicate that optimum Ge/C ratio for strain compensation is between 11 and 22. The interface between amorphous and regrown phases (a/c interface) had a dramatic morphology change during its migration to the surface. Initial <100> planar interface decomposes into a <111> faceted interface, changing the growth kinetics; this is associated with strain relaxation by stacking fault formation on (111) planes in the a/c interface.

  2. LHC, le Big Bang en éprouvette

    ScienceCinema (OSTI)

    None

    2016-07-12

    Notre compréhension de l’Univers est en train de changer… Bar des Sciences - Tout public Débat modéré par Marie-Odile Montchicourt, journaliste de France Info. Evenement en vidéoconférence entre le Globe de la science et de l’innovation, le bar le Baloard de Montpellier et la Maison des Métallos à Paris. Intervenants au CERN : Philippe Charpentier et Daniel Froideveaux, physiciens au CERN. Intervenants à Paris : Vincent Bontemps, philosophe et chercheur au CEA ; Jacques Arnould, philosophe, historien des sciences et théologien, Jean-Jacques Beineix, réalisateur, producteur, scénariste de cinéma. Intervenants à Montpellier (LPTA) : André Neveu, physicien théoricien et directeur de recherche au CNRS ; Gilbert Moultaka, physicien théoricien et chargé de recherche au CNRS. Partenariat : CERN, CEA, IN2P3, Université MPL2 (LPTA) Dans le cadre de la Fête de la science 2008

  3. Microgravity and Vision in Astronauts | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    GE Researchers Study Microgravity and Vision Impairment Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Researchers Study Microgravity and Vision Impairment Scientists at GE Global Research will soon begin a 3-year project to build and test a new ultrasound probe and measurement techniques that could eventually be

  4. Science as Art: Jet Engine Airflow | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    as Art: Jet Engine Airflow Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Science as Art: Jet Engine Airflow Rick Arthur 2012.10.26 Brian Mitchell is a lab manager responsible for the development of computational fluid dynamics (CFD) codes and methods that are used heavily by GE Aviation, GE Power & Water, and GE

  5. Extended Battery Life in Electric Vehicles | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    GE, Ford, University of Michigan Extend Battery Life for EVs Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE, Ford, University of Michigan Extend Battery Life for EVs In what could propel electric vehicles (EVs) miles down the road toward commercial viability, GE researchers, in partnership with Ford Motor Company

  6. GE Showcases Industrial Internet Innovations and Promotes Win-Win

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Cooperation at 2015 TECHfest | GE Global Research Showcases Industrial Internet Innovations and Promotes Win-Win Cooperation at 2015 TECHfest Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Showcases Industrial Internet Innovations and Promotes Win-Win Cooperation at 2015 TECHfest GE China Technology Center teams

  7. GE Progress Includes 140 Things We Made Yesterday | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Progress Includes 140 Things We Made Yesterday Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Progress Includes 140 Things We Made Yesterday Kristen Brosnan 2011.12.12 Hi everybody, I wanted to share a link today to a video that was pulled together at a remarkable pace and was launched last week. To go along with

  8. GE partners with 'Girls Who Code' for summer program | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Partners with 'Girls Who Code' for Summer Immersion Program to Help Close the Gender Gap in Tech Sector Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Partners with 'Girls Who Code' for Summer Immersion Program to Help Close the Gender Gap in Tech Sector Aimed at equipping girls with skills to explore Science, Tech,

  9. GE, NASA Work to Relaunch Supersonic Air Travel | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Supporting NASA's efforts to Relaunch Commercial Supersonic Air Travel Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Supporting NASA's efforts to Relaunch Commercial Supersonic Air Travel Awarded 2- year $599,000 program to reduce engine noise during takeoffs and landings NISKAYUNA, NY - JUNE 10, 2015 - Scientists

  10. GE Awarded DOE Funding to Pilot Carbon Capture Technology | GE Global

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Research Awarded DOE Project to Pilot CO2 Capture Technology for Power Plants Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Awarded DOE Project to Pilot CO2 Capture Technology for Power Plants Same class of ingredients found in hair conditioners and fabric softeners could hold key to washing out CO2 from Power

  11. GE Develops High Water Recovery Technology in China | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Develops High Water Recovery Technology in China Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Develops High Water Recovery Technology in China Technology aims to boost development of China's household water purification industry SHANGHAI, September. 17, 2015 - A team of scientists led by the Coating and Membrane

  12. Breaking Ground for GE Oil & Gas Tech Center|GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Announces New Technology Partnership with Devon Energy at Global Research Oil & Gas Technology Center in Oklahoma City Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Announces New Technology Partnership with Devon Energy at Global Research Oil & Gas Technology Center in Oklahoma City $125M global hub to

  13. Electronic and magnetic properties of Si substituted Fe3Ge

    DOE PAGES-Beta [OSTI]

    Shanavas, Kavungal Veedu; McGuire, Michael A.; Parker, David S.

    2015-09-23

    Using first principles calculations we studied the effect of Si substitution in the hexagonal Fe3Ge. We find the low temperature magnetic anisotropy in this system to be planar and originating mostly from the spin-orbit coupling in Fe-d states. Reduction of the unitcell volume reduces the in-plane magnetic anisotropy, eventually turning it positive which reorients the magnetic moments to the axial direction. We find that substituting Ge with the smaller Si ions also reduces the anisotropy, potentially enhancing the region of stability of the axial magnetization, which is beneficial for magnetic applications. Thus our experimental measurements on samples of Fe3Ge1–xSix confirmmore » these predictions and show that substitution of about 6% of the Ge with Si increases by approximately 35 K the temperature range over which anisotropy is uniaxial.« less

  14. GE funds initiative to support STEM initiatives in Oklahoma ...

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    STEM Empowers OK: Initiative to enrich STEM education in Oklahoma On April 21, 2015, GE announced a grant to the state of Oklahoma to enhance STEM education initiatives. Jeff ...

  15. 3D Printing Medical Devices | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Additive Manufacturing Demonstration at GE Global Research Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in ...

  16. The role of surface passivation in controlling Ge nanowire faceting

    DOE PAGES-Beta [OSTI]

    Gamalski, A. D.; Tersoff, J.; Kodambaka, S.; Zakharov, D. N.; Ross, F. M.; Stach, E. A.

    2015-11-05

    In situ transmission electron microscopy observations of nanowire morphologies indicate that during Au-catalyzed Ge nanowire growth, Ge facets can rapidly form along the nanowire sidewalls when the source gas (here, digermane) flux is decreased or the temperature is increased. This sidewall faceting is accompanied by continuous catalyst loss as Au diffuses from the droplet to the wire surface. We suggest that high digermane flux and low temperatures promote effective surface passivation of Ge nanowires with H or other digermane fragments inhibiting diffusion and attachment of Au and Ge on the sidewalls. Furthermore, these results illustrate the essential roles of themore » precursor gas and substrate temperature in maintaining nanowire sidewall passivation, necessary to ensure the growth of straight, untapered, <111>-oriented nanowires.« less

  17. Next-Generation Subsea Technology |GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    As a result, from 2011 until 2013, at the Ormen Lange field, a compression pilot system, including GE's Blue -C compressor, high-speed motor and a 12 MW variable speed drive has ...

  18. Notrees 1B (GE Energy) Wind Farm | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    W 60,000,000,000 mW 0.06 GW Number of Units 40 Commercial Online Date 2009 Wind Turbine Manufacturer GE Energy References Wind Energy Market Intelligence1 Loading map......

  19. GE, Clean Energy Fuels Partner to Expand Natural Gas Highway...

    Open Energy Information (Open El) [EERE & EIA]

    GE, Clean Energy Fuels Partner to Expand Natural Gas Highway Home > Groups > Clean and Renewable Energy Jessi3bl's picture Submitted by Jessi3bl(15) Member 16 December, 2012 -...

  20. Technology makes reds "pop" in LED displays | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Reveal and Energy Smart consumer brands, and Evolve(tm), GTx(tm), Immersion(tm), Infusion(tm), Lumination(tm), Albeo(tm) and Tetra commercial brands, all trademarks of GE....

  1. Driving Sensing Technology in Oil & Gas | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    and fellow Photonics Lab team members at GE Global Research. It is a great pleasure to share the news that Dr. William A. Challener, a physicist in the Photonics Laboratory, ...

  2. Pattern Recognition and Image Analysis in Materials | GE Global...

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    in new window) Pattern Recognition and Image Analysis in Materials Jim Grande 2012.09.25 Hi I'm Jim Grande and I've been working at GE Global Research in Niskayuna for over 33...

  3. Carrier Density Modulation in Ge Heterostructure by Ferroelectric Switching

    SciTech Connect (OSTI)

    Ponath, Patrick; Fredrickson, Kurt; Posadas, Agham B.; Ren, Yuan; Vasudevan, Rama K; Okatan, Mahmut Baris; Jesse, Stephen; Aoki, Toshihiro; McCartney, Martha; Smith, David J; Kalinin, Sergei V; Lai, Keji; Demkov, Alexander A.

    2015-01-01

    The development of nonvolatile logic through direct coupling of spontaneous ferroelectric polarization with semiconductor charge carriers is nontrivial, with many issues, including epitaxial ferroelectric growth, demonstration of ferroelectric switching, and measurable semiconductor modulation. Here we report a true ferroelectric field effect carrier density modulation in an underlying Ge(001) substrate by switching of the ferroelectric polarization in the epitaxial c-axis-oriented BaTiO3 (BTO) grown by molecular beam epitaxy (MBE) on Ge. Using density functional theory, we demonstrate that switching of BTO polarization results in a large electric potential change in Ge. Aberration-corrected electron microscopy confirms the interface sharpness, and BTO tetragonality. Electron-energy-loss spectroscopy (EELS) indicates the absence of any low permittivity interlayer at the interface with Ge. Using piezoelectric force microscopy (PFM), we confirm the presence of fully switchable, stable ferroelectric polarization in BTO that appears to be single domain. Using microwave impedance microscopy (MIM), we clearly demonstrate a ferroelectric field effect.

  4. Steve Duclos, Chief Scientist, GE Global Research, Research Priorities...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    SessionC3Duclos-GE.pdf More Documents & Publications Trans-Atlantic Workshop on Rare Earth Elements and Other Critical Materials for a Clean Energy Future Iowa lab gets...

  5. Photovoltaic Power Generation in Flagstaff | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Photovoltaic Power Generation in Flagstaff Click to email this to a friend (Opens in new ... Photovoltaic Power Generation in Flagstaff Kathleen O'Brien 2012.05.25 GE Global Research ...

  6. The role of surface passivation in controlling Ge nanowire faceting

    SciTech Connect (OSTI)

    Gamalski, A. D.; Tersoff, J.; Kodambaka, S.; Zakharov, D. N.; Ross, F. M.; Stach, E. A.

    2015-11-05

    In situ transmission electron microscopy observations of nanowire morphologies indicate that during Au-catalyzed Ge nanowire growth, Ge facets can rapidly form along the nanowire sidewalls when the source gas (here, digermane) flux is decreased or the temperature is increased. This sidewall faceting is accompanied by continuous catalyst loss as Au diffuses from the droplet to the wire surface. We suggest that high digermane flux and low temperatures promote effective surface passivation of Ge nanowires with H or other digermane fragments inhibiting diffusion and attachment of Au and Ge on the sidewalls. Furthermore, these results illustrate the essential roles of the precursor gas and substrate temperature in maintaining nanowire sidewall passivation, necessary to ensure the growth of straight, untapered, <111>-oriented nanowires.

  7. What Works Summit on Manufacturing Innovation | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    What Works Summit on Manufacturing Innovation Click to email this to a friend (Opens in ... What Works Summit on Manufacturing Innovation Glen Merfeld 2012.02.20 Last week, GE ...

  8. Electric Vehicle Technology and Batteries | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    A Recipe for Powering Next-Generation Electric Vehicles Click to email this to a friend ... A Recipe for Powering Next-Generation Electric Vehicles GE and Lawrence Berkeley ...

  9. GE Progetti 3i Spa | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    Progetti 3i Spa Jump to: navigation, search Name: GE Progetti & 3i Spa Place: Narni, Italy Sector: Renewable Energy Product: Italy-based engineering firm that is involved with the...

  10. Are Permanent Magnets Really Permanent? | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    GENIUS MAN 2-1-10-v-working-at-ge-research The Dirt on the Cleanroom IMG0475 Innovation 247: We're Always Open MunichinteriorV 10 Years ON: From the Lab to the...

  11. Invention Factory: How Will Robots Evolve | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    in your browser. You Might Also Like direct write2square The GE Store for Technology is Open for Business IMG0475 Innovation 247: We're Always Open shutterstock316484033...

  12. Global Research on On The Verge | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    this video on www.youtube.com, or enable JavaScript if it is disabled in your browser. Paul Miller from On the Verge takes a tour of GE's Global Research Center to see new...

  13. ARM - VAP Product - mmcrmode3ge200309091cloth

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Productsmmcrmodemmcrmode3ge200309091cloth Documentation Data Management Facility Plots (Quick Looks) Citation DOI: 10.5439/1027343 [ What is this? ] Generate Citation ARM Data Discovery Browse Data Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send VAP Output : MMCRMODE3GE200309091CLOTH ARSCL: derived, MMCR Mode 3 (general mode) moments Active Dates 2003.09.27 - 2004.08.10

  14. ARM - VAP Product - mmcrmode3ge200804181cloth

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Productsmmcrmodemmcrmode3ge200804181cloth Documentation Data Management Facility Plots (Quick Looks) Citation DOI: 10.5439/1027350 [ What is this? ] Generate Citation ARM Data Discovery Browse Data Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send VAP Output : MMCRMODE3GE200804181CLOTH ARSCL: derived, MMCR Mode 3 (general mode) moments, 20080418 version Active Dates 2008.04.18 - 2011.01.04

  15. AC transport in p-Ge/GeSi quantum well in high magnetic fields

    SciTech Connect (OSTI)

    Drichko, I. L.; Malysh, V. A.; Smirnov, I. Yu.; Golub, L. E.; Tarasenko, S. A.; Suslov, A. V.; Mironov, O. A.; Kummer, M.; Känel, H. von

    2014-08-20

    The contactless surface acoustic wave technique is implemented to probe the high-frequency conductivity of a high-mobility p-Ge/GeSi quantum well structure in the regime of integer quantum Hall effect (IQHE) at temperatures 0.3–5.8 K and magnetic fields up to 18 T. It is shown that, in the IQHE regime at the minima of conductivity, holes are localized and ac conductivity is of hopping nature and can be described within the “two-site” model. The analysis of the temperature and magnetic-field-orientation dependence of the ac conductivity at odd filing factors enables us to determine the effective hole g-factor, |g{sub zz}|≈4.5. It is shown that the in-plane component of the magnetic field leads to a decrease in the g-factor as well as increase in the cyclotron mass, which is explained by orbital effects in the complex valence band of germanium.

  16. Properties of Si{sub n}, Ge{sub n}, and Si{sub n}Ge{sub n} clusters

    SciTech Connect (OSTI)

    Dong, Yi; Rehman, Habib ur; Springborg, Michael

    2015-01-22

    The structures of Si{sub n}, Ge{sub n}, and Si{sub n}Ge{sub n} clusters with up to 44 atoms have been determined theoretically using an unbiased structure-optimization method in combination with a parametrized, density-functional description of the total energy for a given structure. By analyzing the total energy in detail, particularly stable clusters are identified. Moreover, general trends in the structures are identified with the help of specifically constructed descriptors.

  17. TEE-0074 - In the Matter of GE Appliances & Lighting | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    4 - In the Matter of GE Appliances & Lighting TEE-0074 - In the Matter of GE Appliances & Lighting This Decision and Order considers an Application for Exception filed by GE Appliances & Lighting (GE) seeking exception relief from the provision of 10 C.F.R. Part 430, Energy Conservation Program for Consumer Products: Energy Conservation Standards for Refrigerators, Refrigerator-Freezers and Freezers (Refrigerator Efficiency Standards). In its exception request, GE asserts that the

  18. Thermoelectric properties and nonstoichiometry of GaGeTe

    SciTech Connect (OSTI)

    Drasar, C.; Kucek, V.; Benes, L.; Lostak, P.; Vlcek, M.

    2012-09-15

    Polycrystalline samples of composition Ga{sub 1+x}Ge{sub 1-x}Te (x=-0.03 Division-Sign 0.07) and GaGeTe{sub 1-y} (y=-0.02 Division-Sign 0.02) were synthesized from elements of 5 N purity using a solid state reaction. The products of synthesis were identified by X-ray diffraction; phase purity and microstructure were examined by EDX/SEM. Samples for measurement of transport properties were prepared using hot-pressing. They were characterized by measurement of electrical conductivity, the Hall coefficient, and the Seebeck coefficient over a temperature range 80-480 K and of thermal conductivity over a temperature range 300-580 K. All samples show p-type conductivity. We discuss the influence of stoichiometry on the phase purity of the samples and on free carrier concentration. The investigation of thermoelectric properties shows that the power factor of these samples is low compared to state-of-the-art materials at room temperature but increases distinctly with temperature. - Graphical abstract: Structure and preparation of GaGeTe. Electrical conductivity {sigma}, the Hall coefficient R{sub H}, the Seebeck coefficient S and thermal conductivity {kappa} as a function of temperature for the Ga{sub 1.01}Ge{sub 0.99}Te{sub 0.99} sample. Highlights: Black-Right-Pointing-Pointer We explore thermoelectric and transport properties of Ga{sub 1+x}Ge{sub 1-x}Te and GaGeTe{sub 1-y}. Black-Right-Pointing-Pointer GaGeTe is p-type degenerate semiconductor; the hole concentration increase with x and y. Black-Right-Pointing-Pointer Maximum power factor {sigma}S{sup 2}=3.6 Multiplication-Sign 10{sup -4} Wm{sup -1} K{sup -2} at 475 K.

  19. Ge{sub 1-y}Sn{sub y} (y = 0.01-0.10) alloys on Ge-buffered Si: Synthesis,

    Office of Scientific and Technical Information (OSTI)

    microstructure, and optical properties (Journal Article) | SciTech Connect Ge{sub 1-y}Sn{sub y} (y = 0.01-0.10) alloys on Ge-buffered Si: Synthesis, microstructure, and optical properties Citation Details In-Document Search Title: Ge{sub 1-y}Sn{sub y} (y = 0.01-0.10) alloys on Ge-buffered Si: Synthesis, microstructure, and optical properties Novel hydride chemistries are employed to deposit light-emitting Ge{sub 1-y}Sn{sub y} alloys with y ≤ 0.1 by Ultra-High Vacuum Chemical Vapor

  20. Strong emission of terahertz radiation from nanostructured Ge surfaces

    SciTech Connect (OSTI)

    Kang, Chul; Maeng, Inhee; Kee, Chul-Sik; Leem, Jung Woo; Yu, Jae Su; Kim, Tae Heon; Lee, Jong Seok

    2015-06-29

    Indirect band gap semiconductors are not efficient emitters of terahertz radiation. Here, we report strong emission of terahertz radiation from germanium wafers with nanostructured surfaces. The amplitude of THz radiation from an array of nano-bullets (nano-cones) is more than five (three) times larger than that from a bare-Ge wafer. The power of the terahertz radiation from a Ge wafer with an array of nano-bullets is comparable to that from n-GaAs wafers, which have been widely used as a terahertz source. We find that the THz radiation from Ge wafers with the nano-bullets is even more powerful than that from n-GaAs for frequencies below 0.6 THz. Our results suggest that introducing properly designed nanostructures on indirect band gap semiconductor wafers is a simple and cheap method to improve the terahertz emission efficiency of the wafers significantly.

  1. Reducing 68Ge Background in Dark Matter Experiments

    SciTech Connect (OSTI)

    Kouzes, Richard T.; Orrell, John L.

    2011-03-01

    Experimental searches for dark matter include experiments with sub-0.5 keV-energy threshold high purity germanium detectors. Experimental efforts, in partnership with the CoGeNT Collaboration operating at the Soudan Underground Laboratory, are focusing on energy threshold reduction via noise abatement, reduction of backgrounds from cosmic ray generated isotopes, and ubiquitous environmental radioactive sources. The most significant cosmic ray produced radionuclide is 68Ge. This paper evaluates reducing this background by freshly mining and processing germanium ore. The most probable outcome is a reduction of the background by a factor of two, and at most a factor of four. A very cost effective alternative is to obtain processed Ge as soon as possible and store it underground for 18 months.

  2. CEBAF SRF Performance during Initial 12 GeV Commissioning

    SciTech Connect (OSTI)

    Bachimanchi, Ramakrishna; Allison, Trent; Daly, Edward; Drury, Michael; Hovater, J; Lahti, George; Mounts, Clyde; Nelson, Richard; Plawski, Tomasz

    2015-09-01

    The Continuous Electron Beam Accelerator Facility (CEBAF) energy upgrade from 6 GeV to 12 GeV includes the installation of eleven new 100 MV cryomodules (88 cavities). The superconducting RF cavities are designed to operate CW at an accelerating gradient of 19.3 MV/m with a QL of 3×107. Not all the cavities were operated at the minimum gradient of 19.3 MV/m with the beam. Though the initial 12 GeV milestones were achieved during the initial commissioning of CEBAF, there are still some issues to be addressed for long term reliable operation of these modules. This paper reports the operational experiences during the initial commissioning and the path forward to improve the performance of C100 (100 MV) modules.

  3. RHIC 100 GeV Polarized Proton Luminosity

    SciTech Connect (OSTI)

    Zhang, S. Y.

    2014-01-17

    A big problem in RHIC 100 GeV proton run 2009 was the significantly lower luminosity lifetime than all previous runs. It is shown in this note that the beam intensity decay in run 2009 is caused by the RF voltage ramping in store. It is also shown that the beam decay is not clearly related to the beam momentum spread, therefore, not directly due to the 0.7m. β* Furthermore, the most important factor regarding the low luminosity lifetime is the faster transverse emittance growth in store, which is also much worse than the previous runs, and is also related to the RF ramping. In 100 GeV proton run 2012a, the RF ramping was abandoned, but the β* was increased to 0.85m, with more than 20% loss of luminosity, which is not necessary. It is strongly suggested to use smaller β* in 100 GeV polarized proton run 2015/2016

  4. Flat Ge-doped optical fibres for food irradiation dosimetry

    SciTech Connect (OSTI)

    Noor, N. Mohd; Jusoh, M. A.; Razis, A. F. Abdull; Alawiah, A.; Bradley, D. A.

    2015-04-24

    Exposing food to radiation can improve hygiene quality, germination control, retard sprouting, and enhance physical attributes of the food product. To provide for food safety, radiation dosimetry in irradiated food is required. Herein, fabricated germanium doped (Ge-doped) optical fibres have been used. The fibres have been irradiated using a gamma source irradiator, doses in the range 1 kGy to 10 kGy being delivered. Using Ge-doped optical fibres of variable size, type and dopant concentration, study has been made of linearity, reproducibility, and fading. The thermoluminescence (TL) yield of the fibres were obtained and compared. The fibres exhibit a linear dose response over the investigated range of doses, with mean reproducibility to within 2.69 % to 8.77 %, exceeding the dose range of all commercial dosimeters used in evaluating high doses for the food irradiation industry. TL fading of the Ge-doped flat fibres has been found to be < 13%.

  5. The 6 GeV TMD Program at Jefferson Lab

    SciTech Connect (OSTI)

    Puckett, Andrew J.

    2015-01-01

    The study of the transverse momentum dependent parton distributions (TMDs) of the nucleon in semi-inclusive deep-inelastic scattering (SIDIS) has emerged as one of the major physics motivations driving the experimental program using the upgraded 11 GeV electron beam at Jefferson Lab’s Continuous Electron Beam Accelerator Facility (CEBAF). The accelerator construction phase of the CEBAF upgrade is essentially complete and commissioning of the accelerator has begun as of April, 2014. As the new era of CEBAF operations begins, it is appropriate to review the body of published and forthcoming results on TMDs from the 6 GeV era of CEBAF operations, discuss what has been learned, and discuss the key challenges and opportunities for the 11 GeV SIDIS program of CEBAF.

  6. The 6 GeV TMD Program at Jefferson Lab

    SciTech Connect (OSTI)

    Puckett, Andrew J.

    2015-01-01

    The study of the transverse momentum dependent parton distributions (TMDs) of the nucleon in semi-inclusive deep-inelastic scattering (SIDIS) has emerged as one of the major physics motivations driving the experimental program using the upgraded 11 GeV electron beam at Jefferson Labs Continuous Electron Beam Accelerator Facility (CEBAF). The accelerator construction phase of the CEBAF upgrade is essentially complete and commissioning of the accelerator has begun as of April, 2014. As the new era of CEBAF operations begins, it is appropriate to review the body of published and forthcoming results on TMDs from the 6 GeV era of CEBAF operations, discuss what has been learned, and discuss the key challenges and opportunities for the 11 GeV SIDIS program of CEBAF.

  7. High Performance Computing for Manufacturing Parternship | GE Global

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Research GE, US DOE Partner on HPC4Mfg projects to deliver new capabilities in 3D Printing and higher jet engine efficiency Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE, US DOE Partner on HPC4Mfg projects to deliver new capabilities in 3D Printing and higher jet engine efficiency NISKAYUNA, NY, February 17,

  8. Butterfly-Inspired Thermal Imaging | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Low-Cost Thermal Imaging Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Butterfly-Inspired Design Enables Low-Cost Thermal Imaging Taking heat detection to a new level of sensitivity and speed, a team of scientists at GE Global Research, the technology development arm for the General Electric Company (NYSE: GE),

  9. Field-induced quantum criticality in YbAgGe

    SciTech Connect (OSTI)

    Bud'ko, S.; Canfield, P.

    2008-01-01

    YbAgGe is one of the very few stoichiometric, Yb-based, heavy fermion materials that exhibit field-induced quantum criticality. We will present an overview of thermodynamic and transport measurements in YbAgGe single crystals. Moderate magnetic field (45-90 kOe, depending on orientation) suppresses long range magnetic order, giving rise to non-Fermi-liquid behavior followed at higher field by a crossover to a heavy Fermi-liquid. Given the more accessible temperature and field scales, a non-Fermi liquid region rather than point for T {yields} 0 K may be detected.

  10. The Technology Behind the Locomotives | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Happy Train Day: Celebrating the Bright Minds & Tech Behind GE's Locomotives Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Happy Train Day: Celebrating the Bright Minds & Tech Behind GE's Locomotives Roy Primus 2014.05.10 It may be hard to believe, but in today's world of faster, stronger, smarter and cheaper,

  11. Nanotextured Anti-Icing Surfaces | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Demonstrate Promising Anti-icing Nano Surfaces Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Scientists Demonstrate Promising Anti-icing Nano Surfaces GE Global Research today presented new research findings on its nanotextured anti-icing surfaces. In addition to dramatically reducing ice adhesion, these surfaces

  12. Itinerant magnetism in metallic CuFe2Ge2

    DOE PAGES-Beta [OSTI]

    Shanavas, K. V.; Singh, David J.; He, Ruihua

    2015-03-25

    Theoretical calculations are performed to understand the electronic structure and magnetic properties of CuFe2Ge2. The band structure reveals large electron density N(EF) at the Fermi level suggesting a strong itinerant character of magnetism. The Fermi surface is dominated by two dimensional sheet like structures, with potentially strong nesting between them. The magnetic ground state appears to be ferromagnetic along a and antiferromagnetic in other directions. The results show that CuFe2Ge2 is an antiferromagnetic metal, with similarities to the Fe-based superconductors; such as magnetism with substantial itinerant character and coupling between magnetic order and electrons at the Fermi energy.

  13. Cloud-Based Air Traffic Management Announcement | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Works to Bring Air Traffic Management Into "The Cloud" Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Works to Bring Air Traffic Management Into "The Cloud" A global leader in avionics and software development, the General Electric Company (NYSE: GE) has embarked on an 18-month project with the

  14. Durathon Battery in New Bus | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Battery-Dominant Fuel Cell Bus Uses New Durathon(tm) Battery Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Battery-Dominant Fuel Cell Bus Uses New Durathon(tm) Battery Researchers at GE Global Research, the General Electric Company's (NYSE: GE) technology development arm, have achieved a first step in reducing the

  15. Inhibitive formation of nanocavities by introduction of Si atoms in Ge nanocrystals produced by ion implantation

    SciTech Connect (OSTI)

    Cai, R. S.; Shang, L.; Liu, X. H.; Zhang, Y. J.; Wang, Y. Q. E-mail: barba@emt.inrs.ca; Ross, G. G.; Barba, D. E-mail: barba@emt.inrs.ca

    2014-05-28

    Germanium nanocrystals (Ge-nc) were successfully synthesized by co-implantation of Si and Ge ions into a SiO{sub 2} film thermally grown on (100) Si substrate and fused silica (pure SiO{sub 2}), respectively, followed by subsequent annealing at 1150 °C for 1 h. Transmission electron microscopy (TEM) examinations show that nanocavities only exist in the fused silica sample but not in the SiO{sub 2} film on a Si substrate. From the analysis of the high-resolution TEM images and electron energy-loss spectroscopy spectra, it is revealed that the absence of nanocavities in the SiO{sub 2} film/Si substrate is attributed to the presence of Si atoms inside the formed Ge-nc. Because the energy of Si-Ge bonds (301 kJ·mol{sup −1}) are greater than that of Ge-Ge bonds (264 kJ·mol{sup −1}), the introduction of the Si-Ge bonds inside the Ge-nc can inhibit the diffusion of Ge from the Ge-nc during the annealing process. However, for the fused silica sample, no crystalline Si-Ge bonds are detected within the Ge-nc, where strong Ge outdiffusion effects produce a great number of nanocavities. Our results can shed light on the formation mechanism of nanocavities and provide a good way to avoid nanocavities during the process of ion implantation.

  16. DOE - Office of Legacy Management -- R K Le Blond Machine Tool...

    Office of Legacy Management (LM)

    Facility used to conduct two billet drilling tests to demonstrating the capability of ... and Development Report (NLCO-886); Drilling Uranium Billets on a LeBlond-Carlstedt ...

  17. Ge{sub 1-y}Sn{sub y} (y = 0.01-0.10) alloys on Ge-buffered Si: Synthesis, microstructure, and optical properties

    SciTech Connect (OSTI)

    Senaratne, C. L.; Kouvetakis, J.; Gallagher, J. D.; Jiang, Liying; Smith, D. J.; Menndez, J.; Aoki, Toshihiro

    2014-10-07

    Novel hydride chemistries are employed to deposit light-emitting Ge{sub 1-y}Sn{sub y} alloys with y ? 0.1 by Ultra-High Vacuum Chemical Vapor Deposition (UHV-CVD) on Ge-buffered Si wafers. The properties of the resultant materials are systematically compared with similar alloys grown directly on Si wafers. The fundamental difference between the two systems is a fivefold (and higher) decrease in lattice mismatch between film and virtual substrate, allowing direct integration of bulk-like crystals with planar surfaces and relatively low dislocation densities. For y ? 0.06, the CVD precursors used were digermane Ge?H? and deuterated stannane SnD?. For y ? 0.06, the Ge precursor was changed to trigermane Ge?H?, whose higher reactivity enabled the fabrication of supersaturated samples with the target film parameters. In all cases, the Ge wafers were produced using tetragermane Ge?H?? as the Ge source. The photoluminescence intensity from Ge{sub 1y}Sn{sub y}/Ge films is expected to increase relative to Ge{sub 1y}Sn{sub y}/Si due to the less defected interface with the virtual substrate. However, while Ge{sub 1y}Sn{sub y}/Si films are largely relaxed, a significant amount of compressive strain may be present in the Ge{sub 1y}Sn{sub y}/Ge case. This compressive strain can reduce the emission intensity by increasing the separation between the direct and indirect edges. In this context, it is shown here that the proposed CVD approach to Ge{sub 1y}Sn{sub y}/Ge makes it possible to approach film thicknesses of about 1 ?m, for which the strain is mostly relaxed and the photoluminescence intensity increases by one order of magnitude relative to Ge{sub 1y}Sn{sub y}/Si films. The observed strain relaxation is shown to be consistent with predictions from strain-relaxation models first developed for the Si{sub 1x}Ge{sub x}/Si system. The defect structure and atomic distributions in the films are studied in detail using advanced electron-microscopy techniques, including

  18. 7-GeV Advanced Photon Source Conceptual Design Report

    SciTech Connect (OSTI)

    Not Available

    1987-04-01

    During the past decade, synchrotron radiation emitted by circulating electron beams has come into wide use as a powerful, versatile source of x-rays for probing the structure of matter and for studying various physical processes. Several synchrotron radiation facilities with different designs and characteristics are now in regular operation throughout the world, with recent additions in this country being the 0.8-GeV and 2.5-GeV rings of NSLS at Brookhaven National Laboratory. However, none of the operating facilities has been designed to use a low-emittance, high-energy stored beam, together with modern undulator devices, to produce a large number of hard x-ray beams of extremely high brilliance. This document is a proposal to the Department of Energy to construct and operate high-energy synchrotron radiation facility at Argonne National Laboratory. We have now chosen to set the design energy of this facility at 7.0 GeV, with the capability to operate at up to 7.5 GeV.

  19. Carrier Density Modulation in Ge Heterostructure by Ferroelectric Switching

    DOE PAGES-Beta [OSTI]

    Ponath, Patrick; Fredrickson, Kurt; Posadas, Agham B.; Ren, Yuan; Vasudevan, Rama K; Okatan, Mahmut Baris; Jesse, Stephen; Aoki, Toshihiro; McCartney, Martha; Smith, David J; et al

    2015-01-01

    The development of nonvolatile logic through direct coupling of spontaneous ferroelectric polarization with semiconductor charge carriers is nontrivial, with many issues, including epitaxial ferroelectric growth, demonstration of ferroelectric switching, and measurable semiconductor modulation. Here we report a true ferroelectric field effect carrier density modulation in an underlying Ge(001) substrate by switching of the ferroelectric polarization in the epitaxial c-axis-oriented BaTiO3 (BTO) grown by molecular beam epitaxy (MBE) on Ge. Using density functional theory, we demonstrate that switching of BTO polarization results in a large electric potential change in Ge. Aberration-corrected electron microscopy confirms the interface sharpness, and BTO tetragonality. Electron-energy-lossmore » spectroscopy (EELS) indicates the absence of any low permittivity interlayer at the interface with Ge. Using piezoelectric force microscopy (PFM), we confirm the presence of fully switchable, stable ferroelectric polarization in BTO that appears to be single domain. Using microwave impedance microscopy (MIM), we clearly demonstrate a ferroelectric field effect.« less

  20. The JLAB 12 GeV Energy Upgrade of CEBAF

    SciTech Connect (OSTI)

    Harwood, Leigh H.

    2013-12-01

    This presentation should describe the progress of the 12GeV Upgrade of CEBAF at Jefferson Lab. The status of the upgrade should be presented as well as details on the construction, procurement, installation and commissioning of the magnet and SRF components of the upgrade.

  1. Demand Response Performance of GE Hybrid Heat Pump Water Heater

    SciTech Connect (OSTI)

    Widder, Sarah H.; Parker, Graham B.; Petersen, Joseph M.; Baechler, Michael C.

    2013-07-01

    This report describes a project to evaluate and document the DR performance of HPWH as compared to ERWH for two primary types of DR events: peak curtailments and balancing reserves. The experiments were conducted with GE second-generation “Brillion”-enabled GeoSpring hybrid water heaters in the PNNL Lab Homes, with one GE GeoSpring water heater operating in “Standard” electric resistance mode to represent the baseline and one GE GeoSpring water heater operating in “Heat Pump” mode to provide the comparison to heat pump-only demand response. It is expected that “Hybrid” DR performance, which would engage both the heat pump and electric elements, could be interpolated from these two experimental extremes. Signals were sent simultaneously to the two water heaters in the side-by-side PNNL Lab Homes under highly controlled, simulated occupancy conditions. This report presents the results of the evaluation, which documents the demand-response capability of the GE GeoSpring HPWH for peak load reduction and regulation services. The sections describe the experimental protocol and test apparatus used to collect data, present the baselining procedure, discuss the results of the simulated DR events for the HPWH and ERWH, and synthesize key conclusions based on the collected data.

  2. Combined wet and dry cleaning of SiGe(001)

    SciTech Connect (OSTI)

    Park, Sang Wook; Kaufman-Osborn, Tobin; Kim, Hyonwoong; Siddiqui, Shariq; Sahu, Bhagawan; Yoshida, Naomi; Brandt, Adam; Kummel, Andrew C.

    2015-07-15

    Combined wet and dry cleaning via hydrofluoric acid (HF) and atomic hydrogen on Si{sub 0.6}Ge{sub 0.4}(001) surface was studied at the atomic level using ultrahigh vacuum scanning tunneling microscopy (STM), scanning tunneling spectroscopy (STS), and x-ray photoelectron spectroscopy to understand the chemical transformations of the surface. Aqueous HF removes native oxide, but residual carbon and oxygen are still observed on Si{sub 0.6}Ge{sub 0.4}(001) due to hydrocarbon contamination from post HF exposure to ambient. The oxygen contamination can be eliminated by shielding the sample from ambient via covering the sample in the HF cleaning solution until the sample is introduced to the vacuum chamber or by transferring the sample in an inert environment; however, both processes still leave carbon contaminant. Dry in-situ atomic hydrogen cleaning above 330 °C removes the carbon contamination on the surface consistent with a thermally activated atomic hydrogen reaction with surface hydrocarbon. A postdeposition anneal at 550 °C induces formation of an atomically flat and ordered SiGe surface observed by STM. STS verifies that the wet and dry cleaned surface has an unpinned Fermi level with no states between the conduction and valence band edge comparable to sputter cleaned SiGe surfaces.

  3. Ge doped GaN with controllable high carrier concentration for...

    Office of Scientific and Technical Information (OSTI)

    Ge doped GaN with controllable high carrier concentration for plasmonic applications Citation Details In-Document Search Title: Ge doped GaN with controllable high carrier...

  4. GE to DOE General Counsel; Re:Request for Comment on Large Capacity Clothes Washers

    Energy.gov [DOE]

    GE urges the department engage in rulmaking to amend the clothes washer test procedure to reflect efficiency standards of large-capacity residential clothes washer machines. GE also urges the DOE...

  5. GE-Prolec CCE Meeting October 19,2010 | Department of Energy

    Energy.gov (indexed) [DOE]

    EERE-2010-BT-CE-0014 GE-Prolec CCE Meeting October 19,2010 More Documents & Publications Microsoft PowerPoint - GE-Prolec CCE Meeting 10192010 Microsoft Word -...

  6. Xiang Ge Li La Xian Mai Di He Hydro Power Development Co Ltd...

    Open Energy Information (Open El) [EERE & EIA]

    Xiang Ge Li La Xian Mai Di He Hydro Power Development Co Ltd Jump to: navigation, search Name: Xiang Ge Li La Xian Mai Di He Hydro Power Development Co., Ltd. Place: Yunnan...

  7. Performance of First C100 Cryomodules for the CEBAF 12 GeV Upgrade...

    Office of Scientific and Technical Information (OSTI)

    The goal of the project is a doubling of the available beam energy of CEBAF from 6 GeV to 12 GeV. This increase in beam energy will be due primarily to the construction and ...

  8. EA-0389: Proposed 7-GeV Advanced Photon Source, Argonne, Illinois

    Energy.gov [DOE]

    This EA evaluates the environmental impacts of a proposal for construction and operation of a 6- to 7-GeV synchrotron radiation source known as the 7-GeV Advanced Photon Source at DOE's Argonne...

  9. 9 GeV energy gain in a beam-driven plasma wakefield accelerator...

    Office of Scientific and Technical Information (OSTI)

    9 GeV energy gain in a beam-driven plasma wakefield accelerator Citation Details In-Document Search Title: 9 GeV energy gain in a beam-driven plasma wakefield accelerator An ...

  10. GE Opens New Oil & Gas R&D Center in Oklahoma, Showcases Smart...

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    OKLAHOMA CITY, OKLA. - October 5, 2016 - Providing a present and future glimpse of promising new technologies in the pipeline for the Oil & Gas industry, GE (NYSE:GE) today held ...

  11. Discovery of GeV Emission tfrom the Circinus Galaxy with the...

    Office of Scientific and Technical Information (OSTI)

    Discovery of GeV Emission tfrom the Circinus Galaxy with the Fermi-Lat Citation Details In-Document Search Title: Discovery of GeV Emission tfrom the Circinus Galaxy with the...

  12. Illuminating the 130 GeV Gamma Line with Continuum Photons (Journal...

    Office of Scientific and Technical Information (OSTI)

    Illuminating the 130 GeV Gamma Line with Continuum Photons Citation Details In-Document Search Title: Illuminating the 130 GeV Gamma Line with Continuum Photons Authors: Cohen,...

  13. Xianggelila Xian Ge Ji Liu Yu Xia Zhi En Hydroelectric Development...

    Open Energy Information (Open El) [EERE & EIA]

    Ge Ji Liu Yu Xia Zhi En Hydroelectric Development Ltd Jump to: navigation, search Name: Xianggelila Xian Ge Ji Liu Yu Xia Zhi En Hydroelectric Development Ltd Place: Xianggelila...

  14. Microsoft PowerPoint - GE-Prolec CCE Meeting 10/19/2010 | Department...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Microsoft PowerPoint - GE-Prolec CCE Meeting 10192010 PowerPoint slides on GE-Prolec CCE meeting regarding Docket No. EERE-2010-BT-CE-0014 PDF icon Microsoft PowerPoint - ...

  15. GE to DOE General Counsel; Re:Request for Comment on Large Capacity...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    to DOE General Counsel; Re:Request for Comment on Large Capacity Clothes Washers GE to DOE General Counsel; Re:Request for Comment on Large Capacity Clothes Washers GE urges the...

  16. Delayed plastic relaxation limit in SiGe islands grown by Ge diffusion from a local source

    SciTech Connect (OSTI)

    Vanacore, G. M.; Zani, M.; Tagliaferri, A.; Nicotra, G.; Bollani, M.; Bonera, E.; Montalenti, F.; Picco, A.; Boioli, F.; Capellini, G.; Isella, G.; Osmond, J.

    2015-03-14

    The hetero-epitaxial strain relaxation in nano-scale systems plays a fundamental role in shaping their properties. Here, the elastic and plastic relaxation of self-assembled SiGe islands grown by surface-thermal-diffusion from a local Ge solid source on Si(100) are studied by atomic force and transmission electron microscopies, enabling the simultaneous investigation of the strain relaxation in different dynamical regimes. Islands grown by this technique remain dislocation-free and preserve a structural coherence with the substrate for a base width as large as 350 nm. The results indicate that a delay of the plastic relaxation is promoted by an enhanced Si-Ge intermixing, induced by the surface-thermal-diffusion, which takes place already in the SiGe overlayer before the formation of a critical nucleus. The local entropy of mixing dominates, leading the system toward a thermodynamic equilibrium, where non-dislocated, shallow islands with a low residual stress are energetically stable. These findings elucidate the role of the interface dynamics in modulating the lattice distortion at the nano-scale, and highlight the potential use of our growth strategy to create composition and strain-controlled nano-structures for new-generation devices.

  17. Sn-enriched Ge/GeSn nanostructures grown by MBE on (001) GaAs and Si wafers

    SciTech Connect (OSTI)

    Sadofyev, Yu. G. Martovitsky, V. P.; Klekovkin, A. V.; Saraykin, V. V.; Vasil’evskii, I. S.

    2015-12-15

    Elastically stressed metastable GeSn layers with a tin molar fraction as large as 0.185 are grown on (001) Si and GaAs wafers covered with a germanium buffer layer. A set of wafers with a deviation angle in the range 0°–10° is used. It is established that the GeSn crystal undergoes monoclinic deformation with the angle β to 88° in addition to tetragonal deformation. Misorientation of the wafers surface results in increasing efficiency of the incorporation of tin adatoms into the GeSn crystal lattice. Phase separation in the solid solution upon postgrowth annealing of the structures begins long before the termination of plastic relaxation of elastic heteroepitaxial stresses. Tin released as a result of GeSn decomposition predominantly tends to be found on the surface of the sample. Manifestations of the brittle–plastic mechanism of the relaxation of stresses resulting in the occurrence of microcracks in the subsurface region of the structures under investigation are found.

  18. Why is GeV physics relevant in the age of the LHC?

    SciTech Connect (OSTI)

    Pennington, Michael R.

    2014-02-01

    The contribution that Jefferson Lab has made, with its 6 GeV electron beam, and will make, with its 12 GeV upgrade, to our understanding of the way the fundamental interactions work, particularly strong coupling QCD, is outlined. The physics at the GeV scale is essential even in TeV collisions.

  19. Partners for progress in HVDC: GE and EPRI

    SciTech Connect (OSTI)

    Damsky, B.L.; Ladden, J.M.

    1983-01-01

    Since the first solid-state HVDC system was installed at Eel River in 1971, there have been enormous strides in component capability and control algorithm sophistication. Benefits include reduction in cost and power losses, smaller size and improved system stability - all achieved with the same high reliability. These improvements have been achieved through development programs which required a commitment of considerable resources made possible because GE considers HVDC an important area of growth and because EPRI has consistently supported HVDC projects. Some developments from the GE-EPRI partnership for progress in HVDC technology are already being offered and others are in the process of commercialization. These on-going programs assure that future improvements will continue to make HVDC a more attractive alternative for meeting the utility industry's needs.

  20. Meson Spectroscopy at JLab@12 GeV

    SciTech Connect (OSTI)

    Celentano, Andrea

    2013-03-01

    Meson, being the simplest hadronic bound system, is the ideal "laboratory" to study the interaction between quarks, to understand the role of the gluons inside hadrons and to investigate the origin of color confinement. To perform such studies it is important to measure the meson spectrum, with precise determination of resonance masses and properties, looking for rare qbar q states and for unconventional mesons with exotic quantum numbers (i.e. mesons with quantum numbers that are not compatible with a qbar q structure). With the imminent advent of the 12 GeV upgrade of Jefferson Lab a new generation of meson spectroscopy experiments will start: "Meson-Ex" in Hall B and "GLUEX" in Hall D. Both will use photo-production to explore the spectrum of mesons in the light-quark sector, in the energy range of few GeVs.

  1. The 12 GeV Energy Upgrade at Jefferson Laboratory

    SciTech Connect (OSTI)

    Pilat, Fulvia C.

    2012-09-01

    Two new cryomodules and an extensive upgrade of the bending magnets at Jefferson Lab has been recently completed in preparation for the full energy upgrade in about one year. Jefferson Laboratory has undertaken a major upgrade of its flagship facility, the CW re-circulating CEBAF linac, with the goal of doubling the linac energy to 12 GeV. I will discuss here the main scope and timeline of the upgrade and report on recent accomplishments and the present status. I will then discuss in more detail the core of the upgrade, the new additional C100 cryomodules, their production, tests and recent successful performance. I will then conclude by looking at the future plans of Jefferson Laboratory, from the commissioning and operations of the 12 GeV CEBAF to the design of the MEIC electron ion collider.

  2. GRB 131231A: IMPLICATIONS OF THE GeV EMISSION

    SciTech Connect (OSTI)

    Liu, Bin; Chen, Wei; Liang, Yun-Feng; Zhou, Bei; He, Hao-Ning; Jin, Zhi-Ping; Fan, Yi-Zhong; Wei, Da-Ming [Key laboratory of Dark Matter and Space Astronomy, Purple Mountain Observatory, Chinese Academy of Sciences, Nanjing 210008 (China); Tam, Pak-Hin Thomas [Institute of Astronomy and Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Shao, Lang, E-mail: liangyf@pmo.ac.cn, E-mail: beizhou@pmo.ac.cn, E-mail: yzfan@pmo.ac.cn, E-mail: dmwei@pmo.ac.cn, E-mail: phtam@phys.nthu.edu.tw [Department of Physics, Hebei Normal University, Shijiazhuang 050024 (China)

    2014-05-20

    GRB 131231A was detected by the Large Area Telescope on board the Fermi Space Gamma-ray Telescope. The high-energy gamma-ray (>100MeV) afterglow emission spectrum is F {sub ?}??{sup 0.54} {sup } {sup 0.15} in the first ?1300s after the trigger and the most energetic photon has an energy of ?62GeV, arriving at t ? 520s. With reasonable parameters of the gamma-ray burst (GRB) outflow as well as the density of the circum-burst medium, the synchrotron radiation of electrons or protons accelerated at an external forward shock have difficulty accounting for the data. Rather, the synchrotron self-Compton radiation of the forward shock-accelerated electrons can account for both the spectrum and temporal behavior of theGeV afterglow emission. We also show that the prospect for detecting GRB 131231A-like GRBs with the Cherenkov Telescope Array is promising.

  3. Nucleon Form Factors above 6 GeV

    DOE R&D Accomplishments [OSTI]

    Taylor, R. E.

    1967-09-01

    This report describes the results from a preliminary analysis of an elastic electron-proton scattering experiment... . We have measured cross sections for e-p scattering in the range of q{sup 2} from 0.7 to 25.0 (GeV/c){sup 2}, providing a large region of overlap with previous measurements. In this experiment we measure the cross section by observing electrons scattered from a beam passing through a liquid hydrogen target. The scattered particles are momentum analyzed by a magnetic spectrometer and identified as electrons in a total absorption shower counter. Data have been obtained with primary electron energies from 4.0 to 17.9 GeV and at scattering angles from 12.5 to 35.0 degrees. In general, only one measurement of a cross section has been made at each momentum transfer.

  4. Evaporation-based Ge/.sup.68 Ga Separation

    DOE Patents [OSTI]

    Mirzadeh, Saed; Whipple, Richard E.; Grant, Patrick M.; O'Brien, Jr., Harold A.

    1981-01-01

    Micro concentrations of .sup.68 Ga in secular equilibrium with .sup.68 Ge in strong aqueous HCl solution may readily be separated in ionic form from the .sup.68 Ge for biomedical use by evaporating the solution to dryness and then leaching the .sup.68 Ga from the container walls with dilute aqueous solutions of HCl or NaCl. The chloro-germanide produced during the evaporation may be quantitatively recovered to be used again as a source of .sup.68 Ga. If the solution is distilled to remove any oxidizing agents which may be present as impurities, the separation factor may easily exceed 10.sup.5. The separation is easily completed and the .sup.68 Ga made available in ionic form in 30 minutes or less.

  5. Enhanced Ge/Si(001) island areal density and self-organization due to P predeposition

    SciTech Connect (OSTI)

    Cho, B.; Bareno, J.; Petrov, I.; Greene, J. E.

    2011-05-01

    The predeposition of P, with coverages {theta}{sub P} ranging from 0 to 1 ML, on Si(001) significantly increases both the areal density and spatial self-organization of Ge islands grown by gas-source molecular beam epitaxy from hydride precursors. The Ge island density {rho}{sub Ge} initially increases with {theta}{sub P}, reaching a maximum of 1.4 x 10{sup 10} cm{sup -2} at {theta}{sub P} = 0.7 ML, a factor of four times higher than on bare Si(001) under the same deposition conditions, before decreasing at higher P coverages. The increase in {rho}{sub Ge}({theta}{sub P}) is due to a corresponding decrease in Ge adatom mean free paths resulting from passivation of surface dangling bonds by adsorbed pentavalent P atoms which, in addition, leads to surface roughening and, therefore, higher Ge coverages at constant Ge{sub 2}H{sub 6} dose. As {theta}{sub P} (and hence, {rho}{sub Ge}) increases, so does the degree of Ge island ordering along <100> directions due to the anisotropic strain field surrounding individual islands. Similar results are obtained for Ge island growth on P-doped Si(001) layers where strong P surface segregation provides partial monolayer coverage prior to Ge deposition.

  6. Suzanne G.E. te Velthuis | Argonne National Laboratory

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Suzanne G.E. te Velthuis Physicist Dr. Suzanne te Velthuis, physicist in the Neutron and X-ray Scattering group in the Materials Science Division, has been studying the physics of magnetic thin films and nanostructures throughout her career, focusing on using techniques such as neutron scattering, NMR, XMCD and magneto-optical Kerr microscopy. She was instrument scientist of the POSY1 polarized neutron reflectometer at IPNS from 2001 until the shutdown of that facility in 2009 and consequently

  7. Stump the Scientist | Page 2 of 3 | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Stump the Scientist Curiosity is the inventor's greatest tool. Ask us your question about science or technology and see what our scientists say! Home > Invention > Stump the Scientist Are Permanent Magnets Really Permanent? Watch the Video » Do Molecules Get Old? Watch the Video » Ready to Stump the Scientist? Try your hand at leaving our researchers speechless. Submit Question » Is Wireless Electricity Possible? Watch the Video » Who Is Jim Bray, GE Stump the Scientist? Watch the

  8. Industrial Dojo Program Fosters Industrial Internet Development | GE Global

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Research Launches Cloud Foundry 'Industrial Dojo,' Contributes to Open Source to Foster Continued Development of the Industrial Internet Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Launches Cloud Foundry 'Industrial Dojo,' Contributes to Open Source to Foster Continued Development of the Industrial Internet

  9. Quantum confinement in Si and Ge nanostructures: Theory and experiment

    SciTech Connect (OSTI)

    Barbagiovanni, Eric G.; Lockwood, David J.; Simpson, Peter J.; Goncharova, Lyudmila V.

    2014-03-15

    The role of quantum confinement (QC) in Si and Ge nanostructures (NSs) including quantum dots, quantum wires, and quantum wells is assessed under a wide variety of fabrication methods in terms of both their structural and optical properties. Structural properties include interface states, defect states in a matrix material, and stress, all of which alter the electronic states and hence the measured optical properties. We demonstrate how variations in the fabrication method lead to differences in the NS properties, where the most relevant parameters for each type of fabrication method are highlighted. Si embedded in, or layered between, SiO{sub 2}, and the role of the sub-oxide interface states embodies much of the discussion. Other matrix materials include Si{sub 3}N{sub 4} and Al{sub 2}O{sub 3}. Si NSs exhibit a complicated optical spectrum, because the coupling between the interface states and the confined carriers manifests with varying magnitude depending on the dimension of confinement. Ge NSs do not produce well-defined luminescence due to confined carriers, because of the strong influence from oxygen vacancy defect states. Variations in Si and Ge NS properties are considered in terms of different theoretical models of QC (effective mass approximation, tight binding method, and pseudopotential method). For each theoretical model, we discuss the treatment of the relevant experimental parameters.

  10. Exclusive processes at JLab at 6 GeV

    SciTech Connect (OSTI)

    Kim, Andrey

    2015-01-01

    Deeply virtual exclusive reactions provide a unique opportunity to probe the complex internal structure of the nucleon. They allow to access information about the correlations between parton transverse spatial and longitudinal momentum distributions from experimental observables. Dedicated experiments to study Deeply Virtual Compton Scattering (DVCS) and Deeply Virtual Meson Production (DVMP) have been carried out at Jefferson Lab using continuous electron beam with energies up to 6 GeV. Unpolarized cross sections, beam, target and double spin asymmetries have been measured for DVCS as well as for π0 exclusive electroproduction. The data from Hall B provide a wide kinematic coverage with Q2=1-4.5 GeV2, xB=0.1-0.5, and -t up to 2 GeV2. Hall A data have limited kinematic range partially overlapping with Hall B kinematics but provide a high accuracy measurements. Scaling tests of the DVCS cross sections provide solid evidence of twist-2 dominance, which makes chiral-even GPDs accessible even at modest Q2. We will discuss the interpretation of these data in terms of Generalized Parton Distributions (GPDs) model. Successful description of the recent CLAS π0 exclusive production data within the framework of the GPD-based model provides a unique opportunity to access the chiral-odd GPDs.

  11. Exclusive processes at JLab at 6 GeV

    SciTech Connect (OSTI)

    Kim, Andrey

    2015-01-01

    Deeply virtual exclusive reactions provide a unique opportunity to probe the complex internal structure of the nucleon. They allow to access information about the correlations between parton transverse spatial and longitudinal momentum distributions from experimental observables. Dedicated experiments to study Deeply Virtual Compton Scattering (DVCS) and Deeply Virtual Meson Production (DVMP) have been carried out at Jefferson Lab using continuous electron beam with energies up to 6 GeV. Unpolarized cross sections, beam, target and double spin asymmetries have been measured for DVCS as well as for ?0 exclusive electroproduction. The data from Hall B provide a wide kinematic coverage with Q2=1-4.5 GeV2, xB=0.1-0.5, and ?t up to 2 GeV2. Hall A data have limited kinematic range partially overlapping with Hall B kinematics but provide a high accuracy measurements. Scaling tests of the DVCS cross sections provide solid evidence of twist-2 dominance, which makes chiral-even GPDs accessible even at modest Q2. We will discuss the interpretation of these data in terms of Generalized Parton Distributions (GPDs) model. Successful description of the recent CLAS ?0 exclusive production data within the framework of the GPD-based model provides a unique opportunity to access the chiral-odd GPDs.

  12. Giant piezoelectricity of monolayer group IV monochalcogenides: SnSe, SnS, GeSe, and GeS

    SciTech Connect (OSTI)

    Fei, Ruixiang; Yang, Li; Li, Wenbin; Li, Ju

    2015-10-26

    We predict enormous, anisotropic piezoelectric effects in intrinsic monolayer group IV monochalcogenides (MX, M=Sn or Ge, X=Se or S), including SnSe, SnS, GeSe, and GeS. Using first-principle simulations based on the modern theory of polarization, we find that their piezoelectric coefficients are about one to two orders of magnitude larger than those of other 2D materials, such as MoS{sub 2} and GaSe, and bulk quartz and AlN which are widely used in industry. This enhancement is a result of the unique “puckered” C{sub 2v} symmetry and electronic structure of monolayer group IV monochalcogenides. Given the achieved experimental advances in the fabrication of monolayers, their flexible character, and ability to withstand enormous strain, these 2D structures with giant piezoelectric effects may be promising for a broad range of applications such as nano-sized sensors, piezotronics, and energy harvesting in portable electronic devices.

  13. Synthesis, crystal structure and properties of [(dien){sub 2}Mn]Ge{sub 2}S{sub 4} with mixed-valent Ge centers

    SciTech Connect (OSTI)

    Yue, Cheng-Yang; Yuan, Zhuang-Dong; Zhang, Lu-Ge; Wang, Ya-Bai; Liu, Guo-Dong; Gong, Liao-Kuo; Lei, Xiao-Wu

    2013-10-15

    One new manganese thiogermanate, [(dien){sub 2}Mn]Ge{sub 2}S{sub 4} (dien=diethylenetriamine), was prepared under mild solvothermal conditions and structurally and spectroscopically characterized. The title compound crystallizes in the orthorhombic system, chiral space group P2{sub 1}2{sub 1}2{sub 1} (no. 19) with a=9.113(4) Å, b=12.475(5) Å, c=17.077(7) Å, V=1941.5(15) Å{sup 3} and Z=4. Its structure features a three-dimensional (3D) network composed of a one-dimensional (1D) [Ge{sub 2}S{sub 4}]{sup 2−} anionic chain and a [(dien){sub 2}Mn]{sup 2+} complex interconnected via various hydrogen bonds. The most interesting structural feature of the compound is the presence of two different oxidation states of germanium centers in the 1D [Ge{sub 2}S{sub 4}]{sup 2−} chain, which is also supported by the result of X-ray photoelectron spectroscopy measurement. The optical property of the title compound has also been studied by UV–vis spectra. - Graphical abstract: One new thiogermanate, [(dien){sub 2}Mn]Ge{sub 2}S{sub 4}, contains a one-dimensional [Ge{sub 2}S{sub 4}]{sup 2−} anionic chain with two different oxidation states of germanium centers. Display Omitted - Highlights: • One new manganese thiogermanate [(dien){sub 2}Mn]Ge{sub 2}S{sub 4} was prepared. • The compound features 1D [Ge{sub 2}S{sub 4}]{sup 2−} chain composed of [Ge{sup II}S{sub 4}] and [Ge{sup IV}S{sub 4}] tetrahedra. • The first example of inorganic–organic hybrid thiogermanates with mixed valent Ge centers.

  14. Observation of optical spin injection into Ge-based structures at room temperature

    SciTech Connect (OSTI)

    Yasutake, Yuhsuke; Hayashi, Shuhei; Fukatsu, Susumu; Yaguchi, Hiroyuki

    2013-06-17

    Non-zero spin polarization induced by optical orientation was clearly observed at room temperature in a Ge/Ge{sub 0.8}Si{sub 0.2} quantum well grown on Ge and a Ge layer grown on Si by molecular beam epitaxy, whereas it was absent in bulk Ge. This occurred because indirect-gap photoluminescence (PL), which can obscure the spin-polarization information carried by the direct-gap PL, was quenched by unintentional growth-related defects in the epitaxial layers. Such interpretation was confirmed by applying time gating that effectively removed the indirect-gap PL characterized by a slower rise time, which allowed us to demonstrate the existence of room-temperature spin polarization in bulk Ge.

  15. Comparative analysis of hole transport in compressively strained InSb and Ge quantum well heterostructures

    SciTech Connect (OSTI)

    Agrawal, Ashish; Barth, Michael; Madan, Himanshu; Datta, Suman; Lee, Yi-Jing; Lin, You-Ru; Wu, Cheng-Hsien; Ko, Chih-Hsin; Wann, Clement H.; Loubychev, Dmitri; Liu, Amy; Fastenau, Joel; Lindemuth, Jeff

    2014-08-04

    Compressively strained InSb (s-InSb) and Ge (s-Ge) quantum well heterostructures are experimentally studied, with emphasis on understanding and comparing hole transport in these two-dimensional confined heterostructures. Magnetotransport measurements and bandstructure calculations indicate 2.5 lower effective mass for s-InSb compared to s-Ge quantum well at 1.9??10{sup 12}?cm{sup 2}. Advantage of strain-induced m* reduction is negated by higher phonon scattering, degrading hole transport at room temperature in s-InSb quantum well compared to s-Ge heterostructure. Consequently, effective injection velocity is superior in s-Ge compared to s-InSb. These results suggest s-Ge quantum well heterostructure is more favorable and promising p-channel candidate compared to s-InSb for future technology node.

  16. Irreversible altering of crystalline phase of phase-change Ge-Sb thin films

    SciTech Connect (OSTI)

    Krusin-Elbaum, L.; Shakhvorostov, D.; Cabral, C. Jr.; Raoux, S.; Jordan-Sweet, J. L.

    2010-03-22

    The stability of the crystalline phase of binary phase-change Ge{sub x}Sb{sub 1-x} films is investigated over a wide range of Ge content. From Raman spectroscopy we find the Ge-Sb crystalline structure irreversibly altered after exposure to a laser beam. We show that with increasing beam intensity/temperature Ge agglomerates and precipitates out in the amount growing with x. A simple empirical relation links Ge precipitation temperature T{sub Ge}{sup p} to the rate of change dT{sub cryst}/dx of crystallization, with the precipitation easiest on the mid-range x plateau, where T{sub cryst} is nearly constant. Our findings point to a preferable 15% < or approx. x < 50% window, that may achieve the desired cycling/archival properties of a phase-change cell.

  17. 5 Questions about the SunShot Prize for Minh Le - Solar Program...

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Questions about the SunShot Prize for Minh Le - Solar Program Manager at the U.S. Energy Department 5 ... has been experiencing year-over-year growth of more than 50 percent. ...

  18. Syntaxin 1a Variants Lacking an N-peptide or Bearing the LE Mutation...

    Office of Scientific and Technical Information (OSTI)

    an N-peptide or Bearing the LE Mutation Bind to Munc18a in a Closed Conformation Citation Details In-Document Search Title: Syntaxin 1a Variants Lacking an N-peptide or Bearing ...

  19. How Will We Power the Planet? | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Power The Planet? Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Invention Factory: How Will We Power The Planet? In this episode of Invention Factory, a collaboration between GE and Vice, we look at sustainable energy sources generating power in unexpected ways. From trash to the ocean's tidal energy - all the energy

  20. Application of RTG (SiGe) technology to MESUR

    SciTech Connect (OSTI)

    Vicente, F.A. )

    1993-01-15

    This paper discusses providing electrical power for the Mars Environmental Survey (MESUR) mission. The use of radioisotope thermoelectric generator (RTG) technology using SiGe enables total satisfaction of the mission requirements. This technology permits placing the survey landers at any location on Mars, with the capability of transmitting data directly to Earth. If a relay satellite is deployed, the modular construction of the RTG permits tailoring the power to match that mission configuration. Presented are various configurations and trades directed toward achieving operational status, first with a pathfinder'' mission and subsequently with the full complement of landers.

  1. China Technology Center Celebrates 15 Years | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    China Technology Center Celebrates 15 Years of Innovation "In China for China" Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE's China Technology Center Celebrates 15 Years of Innovation "In China for China" Unveils Visionary Technology Blueprint called "The Next List" Shanghai, China, 5

  2. Meeting Energy Needs in Brazil |GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Looking a Decade Ahead: Electrical Power Generation in Brazil Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Looking a Decade Ahead: Electrical Power Generation in Brazil Ricardo Hernandez Pereira 2014.11.03 In the Bioenergy Systems Organization at GE Global Research - Rio de Janeiro (GRC-R), we research both new

  3. Science Fiction meets Science Future | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Science Fiction meets Science Future Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Science Fiction meets Science Future What happens when you put a sci-fi writer and a real-life scientist in the same (virtual) room and ask them to imagine the future? Well, wonder no more as GE launches its newest series of science

  4. Supercomputing with Livermore National Lab | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Working With Livermore National Lab on Supercomputing Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Working With Livermore National Lab on Supercomputing GE Global Research has been selected by Lawrence Livermore National Laboratory (LLNL) to participate in an incubator program that will use high-performance computing

  5. Santa's sleigh becomes 'smarter' this Christmas | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Santa's sleigh becomes "Intelligent Machine" this Christmas Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Santa's sleigh becomes "Intelligent Machine" this Christmas Thomas The Elf 2014.12.19 Hi there, Thomas the Elf here. I just returned to the North Pole from GE's research labs in Upstate New

  6. Unimpossible Missions: The University Edition | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Home > Impact > Can you do the impossible? Enter our Unimpossible Missions: The University Edition challenge Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Can you do the impossible? Enter our Unimpossible Missions: The University Edition challenge Earlier this year, three teams of GE Global Research

  7. Physical + Digital: The New Power Couple |GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Physical + Digital = the New Power Couple Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Physical + Digital = the New Power Couple Birthed from the marriage of physical and digital industrial concepts, Digital Twin is GE's foundational analytic that aims to bring increased insight, understanding, and added value to

  8. Really Cool Models of Ice Nucleation | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Really Cool Models of Ice Nucleation Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Really Cool Models of Ice Nucleation Rick Arthur 2013.08.20 I'm excited to highlight some progress GE Research has made in modeling the formation of ice from water droplets in contact with cold surfaces. For several years, a

  9. Rio 2016 Olympic Games' technologies | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Rio 2016 Olympic Games' technologies Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Rio 2016 Olympic Games' technologies You cannot imagine how far GE reaches into the Rio 2016 Olympic Games. The technologies (visible and invisible) that will light, move, care for and transform the wonderful city on the world's biggest

  10. BBQ -- Is It Science or Art? | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    BBQ - Is it Science or Art? Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) BBQ - Is it Science or Art? Lynn DeRose 2015.03.13 This is the first in a five-part series of dispatches from GE's Science of Barbecue Experience at South by Southwest. Our state-of-the-art Brilliant Super-Smoker is outfitted with sensors to

  11. Diamond turning of Si and Ge single crystals

    SciTech Connect (OSTI)

    Blake, P.; Scattergood, R.O.

    1988-12-01

    Single-point diamond turning studies have been completed on Si and Ge crystals. A new process model was developed for diamond turning which is based on a critical depth of cut for plastic flow-to-brittle fracture transitions. This concept, when combined with the actual machining geometry for single-point turning, predicts that {open_quotes}ductile{close_quotes} machining is a combined action of plasticity and fracture. Interrupted cutting experiments also provide a meant to directly measure the critical depth parameter for given machining conditions.

  12. Miniaturized Turbine Offers Desalination Solution | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Puts Desalination "on Ice" to Produce Clean Water at Low Cost Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Puts Desalination "on Ice" to Produce Clean Water at Low Cost Awarded US Department of Energy program to test breakthrough concept in water desalination Designing innovative process to

  13. Water Treatment in Oil and Gas Production | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Water Treatment and Reuse in Unconventional Gas Production Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Water Treatment and Reuse in Unconventional Gas Production A key challenge in tapping vast reserves of natural gas from shale deposits is treating the water that is used to bring this gas to the surface. GE

  14. BELLA generates multi-GeV electron beam

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    BELLA generates multi-GeV electron beam Click to share on Facebook (Opens in new window) Click to share on Twitter (Opens in new window) Click to share on Reddit (Opens in new window) Click to share on Pinterest (Opens in new window) Berkeley Lab scientists want to develop accelerators in such a way that accessing the light produced by beams is much less expensive and can be performed in much smaller settings. This image showa a 9 cm long capillary discharge waveguide used in BELLA experiments

  15. Slow Mo Guys and Cold Spray | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Slow Mo Guys and Cold Spray Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Slow Mo Guys and Cold Spray ) The Slow Mo Guys came to GE Global Research in Niskayuna to film our researchers demonstrate a process called "cold spray", in which metal powders are sprayed at high velocities to build a part or add

  16. Take a Closer Look at the Brain | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Take a Closer Look at the Brain Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Take a Closer Look at the Brain Worldwide, more than 450 million people are living with compromised brain health. GE Global Research scientists, along with our medical and academic partners, are asking the big questions to drive neuroscience

  17. Industrial Materials and Inspection Technologies | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Industrial Materials and Inspection Technologies Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Industrial Materials and Inspection Technologies Waseem Faidi 2013.06.12 Hi, I am Waseem Faidi and I lead the Inspection and Metrology Lab at GE Global Research in developing novel inspection and process monitoring solutions

  18. Innovate in China, Innovate for China | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Innovate in China, Innovate for China Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Innovate in China, Innovate for China Xiangli Chen, Ph.D. 2015.06.05 15 years is nothing but a fleeting moment. I can still recall the day when a 10-member GE China technology team settled in Shanghai 15 years ago. Back then, we had an

  19. Inventors in Action: Energy Everywhere | GE Global Research

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    Inventors in Action: Energy Everywhere Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Inventors in Action: Energy Everywhere Different parts of the world present different problems and have different needs in the quest to deliver clean, efficient power to homes and businesses. In this Google+ Hangout, GE experts from

  20. High-Speed Network Enables Industrial Internet | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Unveils High-Speed Network Infrastructure to Connect Machines, Data and People at Light Speed to the Industrial Internet Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Unveils High-Speed Network Infrastructure to Connect Machines, Data and People at Light Speed to the Industrial Internet New fiber optic network

  1. Hybrid and Electric Traction Motor | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    A World-Class Traction Motor for Hybrid and Electric Vehicles Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) A World-Class Traction Motor for Hybrid and Electric Vehicles Engineers at GE Global Research are advancing motor technology that could have a substantial impact on hybrid and electric vehicles (EVs) of the

  2. Digital Twins of physical assets prevents unplanned downtime | GE Global

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Research a 'Digital Twin' for physical assets can help achieve no unplanned downtime Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) How a 'Digital Twin' for physical assets can help achieve no unplanned downtime Mark Grabb and Matt Nielsen, data scientists at GE Global Research, explain the importance of data

  3. Structure and vibrations of different charge Ge impurity in α-quartz

    SciTech Connect (OSTI)

    Kislov, A. N. Mikhailovich, A. P. Zatsepin, A. F.

    2014-10-21

    Atomic structure and localized vibrations of α‐SiO{sub 2}:Ge are studied using computer modeling techniques. The simulation was carried out by the lattice dynamics calculation of the local density of vibrational states. Local structures parameters are calculated, localized symmetrized vibrations frequency caused by Ge impurity in different charge states are defined. The movements of atoms located near Ge impurity are analyzed and their contribution into localized vibrations of different type is evaluated.

  4. Tensile-strain and doping enhanced direct bandgap optical transition of n{sup +} doped Ge/GeSi quantum wells

    SciTech Connect (OSTI)

    Fan, W. J.

    2013-11-14

    Band structures of tensile strained and n{sup +} doped Ge/GeSi quantum wells (QWs) are calculated by multiple-band kp method. The energy dispersion curves of the ? and L conduction subbands are obtained. The effects of tensile strain and n{sup +} doping in Ge on direct bandgap optical gain and spontaneous radiative recombination rate spectra are investigated including the electron leakage from ? to L conduction subbands. Our results show that the optical gain and spontaneous radiative recombination rate can be significantly increased with the tensile strain, n-type doping concentration, and injection carrier density in the Ge QW. The free carrier absorption is calculated and cannot be ignored because of the heavily doped Ge. The pure TM mode polarized net optical gain up to 1153?cm{sup ?1} can be achieved for the Ge/Ge{sub 0.986}Si{sub 0.014} QW with tensile strain of 1.61% and n-type doping concentration of 30??10{sup 18}?cm{sup ?3}.

  5. Charge trapping of Ge-nanocrystals embedded in TaZrO{sub x} dielectric films

    SciTech Connect (OSTI)

    Lehninger, D. Seidel, P.; Geyer, M.; Schneider, F.; Heitmann, J.; Klemm, V.; Rafaja, D.; Borany, J. von

    2015-01-12

    Ge-nanocrystals (NCs) were synthesized in amorphous TaZrO{sub x} by thermal annealing of co-sputtered Ge-TaZrO{sub x} layers. Formation of spherical shaped Ge-NCs with small variation of size, areal density, and depth distribution was confirmed by high-resolution transmission electron microscopy. The charge storage characteristics of the Ge-NCs were investigated by capacitance-voltage and constant-capacity measurements using metal-insulator-semiconductor structures. Samples with Ge-NCs exhibit a maximum memory window of 5 V by sweeping the bias voltage from −7 V to 7 V and back. Below this maximum, the width of the memory window can be controlled by the bias voltage. The fitted slope of the memory window versus bias voltage characteristics is very close to 1 for samples with one layer Ge-NCs. A second layer Ge-NCs does not result in a second flat stair in the memory window characteristics. Constant-capacity measurements indicate charge storage in trapping centers at the interfaces between the Ge-NCs and the surrounding materials (amorphous matrix/tunneling oxide). Charge loss occurs by thermal detrapping and subsequent band-to-band tunneling. Reference samples without Ge-NCs do not show any memory window.

  6. GE Hydro Asia Co Ltd formerly Kvaerner Power Equipment Co Ltd...

    Open Energy Information (Open El) [EERE & EIA]

    Kvaerner Power Equipment Co Ltd Kvaerner Hangfa Jump to: navigation, search Name: GE Hydro Asia Co Ltd (formerly Kvaerner Power Equipment Co., Ltd (Kvaerner Hangfa)) Place:...

  7. Optical Observations of Gamma-Ray Bursts: Connections to GeV...

    Office of Scientific and Technical Information (OSTI)

    Observations of Gamma-Ray Bursts: Connections to GeVTeV Jets Vestrand, W. Thomas Los Alamos National Laboratory Astronomy & Astrophysics(79) Astronomy and Astrophysics Astronomy...

  8. Isotropic plasma etching of Ge Si and SiNx films

    DOE PAGES-Beta [OSTI]

    Henry, Michael David; Douglas, Erica Ann

    2016-05-01

    This study reports on selective isotropic dry etching of chemically vapor deposited (CVD) Ge thin film, release layers using a Shibaura chemical downstream etcher (CDE) with NF3 and Ar based plasma chemistry. Relative etch rates between Ge, Si and SiNx are described with etch rate reductions achieved by adjusting plasma chemistry with O2. Formation of oxides reducing etch rates were measured for both Ge and Si, but nitrides or oxy-nitrides created using direct injection of NO into the process chamber were measured to increase Si and SiNx etch rates while retarding Ge etching.

  9. Ultrahigh-pressure polyamorphism in GeO 2 glass with coordination...

    Office of Scientific and Technical Information (OSTI)

    Ultrahigh-pressure polyamorphism in GeO 2 glass with coordination number >6 Citation ... Resource Relation: Journal Name: Proceedings of the National Academy of Sciences of the ...

  10. Isotropic plasma etching of Ge Si and SiNx films (Journal Article) | DOE

    Office of Scientific and Technical Information (OSTI)

    PAGES Isotropic plasma etching of Ge Si and SiNx films This content will become publicly available on August 31, 2017 Title: Isotropic plasma etching of Ge Si and SiNx films This study reports on selective isotropic dry etching of chemically vapor deposited (CVD) Ge thin film, release layers using a Shibaura chemical downstream etcher (CDE) with NF3 and Ar based plasma chemistry. Relative etch rates between Ge, Si and SiNx are described with etch rate reductions achieved by adjusting plasma

  11. Commissioning of the 123 MeV injector for 12 GeV CEBAF

    SciTech Connect (OSTI)

    Wang, Yan; Hofler, Alicia S.; Kazimi, Reza

    2015-09-01

    The upgrade of CEBAF to 12GeV included modifications to the injector portion of the accelerator. These changes included the doubling of the injection energy and relocation of the final transport elements to accommodate changes in the CEBAF recirculation arcs. This paper will describe the design changes and the modelling of the new 12GeV CEBAF injector. Stray magnetic fields have been a known issue for the 6 GeV CEBAF injector, the results of modelling the new 12GeV injector and the resulting changes implemented to mitigate this issue are described in this paper. The results of beam commissioning of the injector are also presented.

  12. Jefferson Lab Accelerator Delivers Its First 12 GeV Electrons | Jefferson

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Lab Accelerator Delivers Its First 12 GeV Electrons On December 14, full-energy 12 GeV electron beam was provided for the first time, to the Experimental Hall D complex, located in the upper, left corner of this aerial photo of the Continuous Electron Beam Accelerator Facility. Hall D is the new experimental research facility - added to CEBAF as part of the 12 GeV Upgrade project. Beam was also delivered to Hall A (dome in the lower left). Jefferson Lab Accelerator Delivers Its First 12 GeV

  13. Search for GeV GRBs at Chacaltaya

    SciTech Connect (OSTI)

    Castellina, A.; Ghia, P. L.; Morello, C.; Trinchero, G.; Vallania, P.; Vernetto, S.; Navarra, G.; Saavedra, O.; Yoshii, H.; Kaneko, T.; Kakimoto, K.; Nishi, K.; Cabrera, R.; Urzagasti, D.; Velarde, A.; Barthelmy, S. D.; Butterworth, P.; Cline, T. L.; Gehrels, N.; Fishman, G. J.

    1998-05-16

    In this paper we present the results of a search for GeV Gamma Ray Bursts made by the INCA experiment during the first 9 months of operation. INCA, an air shower array located at Mount Chacaltaya (Bolivia) at 5200 m a.s.l., has been searching for GRBs since December 1996. Up to August, 1997, 34 GRBs detected by BATSE occurred in the field of view of the experiment. For any burst, the counting rate of the array in the 2 hours interval around the burst trigger time has been studied. No significant excess has been observed. Assuming for the bursts a power low energy spectrum extending up to 1 TeV with a slope {alpha}=-2 and a duration of 10 s, the obtained 1 GeV-1 TeV energy fluence upper limits range from 7.9 10{sup -5} erg cm{sup -2} to 3.5 10{sup -3} erg cm{sup -2} depending on the event zenith angles.

  14. Detector development for Jefferson Lab's 12GeV Upgrade

    SciTech Connect (OSTI)

    Qiang, Yi

    2015-05-01

    Jefferson Lab will soon finish its highly anticipated 12 GeV Upgrade. With doubled maximum energy, Jefferson Lab’s Continuous Electron Beam Accelerator Facility (CEBAF) will enable a new experimental program with substantial discovery potential, addressing important topics in nuclear, hadronic and electroweak physics. In order to take full advantage of the high energy, high luminosity beam, new detectors are being developed, designed and constructed to fit the needs of different physics topics. The paper will give an overview of various new detector technologies to be used for 12 GeV experiments. It will then focus on the development of two solenoid-based spectrometers, the GlueX and SoLID spectrometers. The GlueX experiment in Hall D will study the complex properties of gluons through exotic hybrid meson spectroscopy. The GlueX spectrometer, a hermetic detector package designed for spectroscopy and the associated partial wave analysis, is currently in the final stage of construction. Hall A, on the other hand, is developing the SoLID spectrometer to capture the 3D image of the nucleon from semi-inclusive processes and to study the intrinsic properties of quarks through mirror symmetry breaking. Such a spectrometer will have the capability to handle very high event rates while still maintaining a large acceptance in the forward region.

  15. Detector development for Jefferson Lab's 12GeV Upgrade

    DOE PAGES-Beta [OSTI]

    Qiang, Yi

    2015-05-01

    Jefferson Lab will soon finish its highly anticipated 12 GeV Upgrade. With doubled maximum energy, Jefferson Lab’s Continuous Electron Beam Accelerator Facility (CEBAF) will enable a new experimental program with substantial discovery potential, addressing important topics in nuclear, hadronic and electroweak physics. In order to take full advantage of the high energy, high luminosity beam, new detectors are being developed, designed and constructed to fit the needs of different physics topics. The paper will give an overview of various new detector technologies to be used for 12 GeV experiments. It will then focus on the development of two solenoid-based spectrometers,more » the GlueX and SoLID spectrometers. The GlueX experiment in Hall D will study the complex properties of gluons through exotic hybrid meson spectroscopy. The GlueX spectrometer, a hermetic detector package designed for spectroscopy and the associated partial wave analysis, is currently in the final stage of construction. Hall A, on the other hand, is developing the SoLID spectrometer to capture the 3D image of the nucleon from semi-inclusive processes and to study the intrinsic properties of quarks through mirror symmetry breaking. Such a spectrometer will have the capability to handle very high event rates while still maintaining a large acceptance in the forward region.« less

  16. Conduction band offset at GeO{sub 2}/Ge interface determined by internal photoemission and charge-corrected x-ray photoelectron spectroscopies

    SciTech Connect (OSTI)

    Zhang, W. F.; Nishimula, T.; Nagashio, K.; Kita, K.; Toriumi, A.

    2013-03-11

    We report a consistent conduction band offset (CBO) at a GeO{sub 2}/Ge interface determined by internal photoemission spectroscopy (IPE) and charge-corrected X-ray photoelectron spectroscopy (XPS). IPE results showed that the CBO value was larger than 1.5 eV irrespective of metal electrode and substrate type variance, while an accurate determination of valence band offset (VBO) by XPS requires a careful correction of differential charging phenomena. The VBO value was determined to be 3.60 {+-} 0.2 eV by XPS after charge correction, thus yielding a CBO (1.60 {+-} 0.2 eV) in excellent agreement with the IPE results. Such a large CBO (>1.5 eV) confirmed here is promising in terms of using GeO{sub 2} as a potential passivation layer for future Ge-based scaled CMOS devices.

  17. Structural properties of Ge on SrTiO{sub 3} (001) surface and Ge/SrTiO{sub 3} interface

    SciTech Connect (OSTI)

    Pu, Long; Wang, Jianli Tang, Gang; Zhang, Junting

    2015-03-14

    Germanium−perovskite oxide heterostructures have a strong potential for next-generation low-voltage and low-leakage metal-oxide semiconductor field-effect transistors. We investigated the atomic structure and electronic properties of Ge on perfect and defective (001) SrTiO{sub 3} by first-principle calculations. The specific adsorption sites at the initial growth stage and the atomic structure of Ge on the SrTiO{sub 3} (001) substrate have been systematically investigated. The surface grand potential was calculated and compared as a function of the relative chemical potential. The complete surface phase diagram was presented. The energetically favorable interfaces were pointed out among the atomic arrangements of the Ge/SrTiO{sub 3} (001) interfaces. The atomic structure and electronic properties of the intrinsic point defects were calculated and analyzed for the Ge/SrTiO{sub 3} (001) interfaces.

  18. 4.2 &lt; 8 >

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  19. 4.4 &lt; 8 >

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  20. 05.3 &lt; 8 >

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  1. 06.4 &lt; 8 >

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  2. 08.4 &lt; 8 >

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  3. 09.4 &lt; 8 >

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  4. ORNL/RASA-84/LT6

    Office of Legacy Management (LM)

    ... Radiological Survey of the Middlesex Municipal Landfill, Middlesex, New Jersey, DOE... in soil tration of the following and Waste Control Guidelines radionuclides in soil ...

  5. 10.4 &lt; 8 >

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  6. 11.4 &lt; 8 >

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  7. 12.5 &lt; 8 >

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  8. 13.4 &lt; 8 >

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  9. 15.2 &lt; 8 >

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  10. 15.4 &lt; 8 >

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  11. Donor-vacancy pairs in irradiated n-Ge: A searching look at the problem

    SciTech Connect (OSTI)

    Emtsev, Vadim; Oganesyan, Gagik

    2014-02-21

    The present situation concerning the identification of vacancy-donor pairs in irradiated n-Ge is discussed. The challenging points are the energy states of these defects deduced from DLTS spectra. Hall effect data seem to be at variance with some important conclusions drawn from DLTS measurements. Critical points of the radiation-produced defect modeling in n-Ge are highlighted.

  12. Magneto-transport analysis of an ultra-low-density two-dimensional hole gas in an undoped strained Ge/SiGe heterostructure

    DOE PAGES-Beta [OSTI]

    Laroche, D.; Huang, S. -H.; Chuang, Y.; Li, J. -Y.; Liu, C. W.; Lu, T. M.

    2016-06-06

    We report the magneto-transport, scattering mechanisms, and e ective mass analysis of an ultralow density two-dimensional hole gas capacitively induced in an undoped strained Ge/Si0:2Ge0:8 heterostructure. This fabrication technique allows hole densities as low as p 1:1 1010 cm² to be achieved, more than one order of magnitude lower than previously reported in doped Ge/SiGe heterostructures. The power-law exponent of the electron mobility versus density curve, / n , is found to be 0:29 over most of the density range, implying that background impurity scattering is the dominant scattering mechanism at intermediate densities in such devices. A charge migration modelmore » is used to explain the mobility decrease at the highest achievable densities. The hole e ective mass is deduced from the temperature dependence of Shubnikov-de Haas oscillations. At p 1:0 1011cm², the e ective mass m is 0:105 m0, which is signi cantly larger than masses obtained from modulation-doped Ge/SiGe two-dimensional hole gases.« less

  13. K(892)* resonance production in Au+Au and p+p collisions at {radical}s{sub NN} = 200 GeV at RHIC

    SciTech Connect (OSTI)

    Adams, J.; Aggarwal, M.M.; Ahammed, Z.; Amonett, J.; Anderson, B.D.; Arkhipkin, D.; Averichev, G.S.; Badyal, S.K.; Bai, Y.; Balewski, J.; Barannikova, O.; Barnby, L.S.; Baudot, J.; Bekele, S.; Belaga, V.V.; Bellwied, R.; Berger, J.; Bezverkhny, B.I.; Bharadwaj, S.; Bhasin, A.; Bhati, A.K.; Bhatia, V.S.; Bichsel, H.; Billmeier, A.; Bland, L.C.; Blyth, C.O.; Bonner, B.E.; Botje, M.; Boucham, A.; Brandin, A.V.; Bravar, A.; Bystersky, M.; Cadman, R.V.; Cai, X.Z.; Caines, H.; Calderon de la Barca Sanchez, M.; Castillo, J.; Cebra, D.; Chajecki, Z.; Chaloupka, P.; Chattopadhyay, S.; Chen, H.F.; Chen, Y.; Cheng, J.; Cherney, M.; Chikanian, A.; Christie, W.; Coffin, J.P.; Cormier, T.M.; Cramer, J.G.; Crawford, H.J.; Das, D.; Das, S.; de Moura, M.M.; Derevschikov, A.A.; Didenko, L.; Dietel, T.; Dogra, S.M.; Dong, W.J.; Dong, X.; Draper, J.E.; Du, F.; Dubey, A.K.; Dunin, V.B.; Dunlop, J.C.; Dutta Mazumdar, M.R.; Eckardt, V.; Edwards, W.R.; Efimov, L.G.; Emelianov, V.; Engelage, J.; Eppley, G.; Erazmus, B.; Estienne, M.; Fachini, P.; Faivre, J.; Fatemi, R.; Fedorisin, J.; Filimonov, K.; Filip, P.; Finch, E.; Fine, V.; Fisyak, Y.; Fomenko, K.; Fu, J.; Gagliardi, C.A.; Gaillard, L.; Gans, J.; Ganti, M.S.; Gaudichet, L.; Geurts, F.; Ghazikhanian, V.; Ghosh, P.; Gonzalez, J.E.; Grachov, O.; Grebenyuk, O.; Grosnick, D.; Guertin, S.M.; Guo, Y.; Gupta, A.; Gutierrez, T.D.; Hallman, T.J.; Hamed, A.; Hardtke, D.; Harris, J.W.; Heinz, M.; Henry, T.W.; Hepplemann, S.; Hippolyte, B.; Hirsch, A.; Hjort, E.; Hoffmann, G.W.; Huang, H.Z.; Huang, S.L.; Hughes, E.W.; Humanic, T.J.; Igo, G.; Ishihara, A.; Jacobs, P.; Jacobs, W.W.; Janik, M.; Jiang, H.; Jones, P.G.; Judd, E.G.; Kabana, S.; Kang, K.; Kaplan, M.; Keane, D.; Khodyrev, V.Yu.; Kiryluk, J.; Kisiel, A.; Kislov, E.M.; Klay, J.; Klein, S.R.; Koetke, D.D.; Kollegger, T.; Kopytine, M.; Kotchenda, L.; Kramer, M.; Kravtsov, P.; Kravtsov, V.I.; Krueger, K.; Kuhn, C.; Kulikov, A.I.; Kumar, A.; Kutuev, R.Kh.; et al.

    2004-12-09

    The short-lived K(892)* resonance provides an efficient tool to probe properties of the hot and dense medium produced in relativistic heavy-ion collisions. We report measurements of K* in {radical}s{sub NN} = 200 GeV Au+Au and p+p collisions reconstructed via its hadronic decay channels K(892)*{sup 0} {yields} K{pi} and K(892)*{sup +-} {yields} K{sub S}{sup 0}{pi}{sup +-} using the STAR detector at RHIC. The K*{sup 0} mass has been studied as function of p{sub T} in minimum bias p + p and central Au+Au collisions. The K* p{sub T} spectra for minimum bias p + p interactions and for Au+Au collisions in different centralities are presented. The K*/K ratios for all centralities in Au+Au collisions are found to be significantly lower than the ratio in minimum bias p + p collisions, indicating the importance of hadronic interactions between chemical and kinetic freeze-outs. The nuclear modification factor of K* at intermediate p{sub T} is similar to that of K{sub S}{sup 0}, but different from {Lambda}. This establishes a baryon-meson effect over a mass effect in the particle production at intermediate p{sub T} (2 < p{sub T} {le} 4 GeV/c). A significant non-zero K*{sup 0} elliptic flow (v{sub 2}) is observed in Au+Au collisions and compared to the K{sub S}{sup 0} and {Lambda} v{sub 2}.

  14. Pressure Safety of JLAB 12GeV Upgrade Cryomodule

    SciTech Connect (OSTI)

    Cheng, Gary; Wiseman, Mark A.; Daly, Ed

    2009-11-01

    This paper reviews pressure safety considerations, per the US Department of Energy (DOE) 10CFR851 Final Rule [1], which are being implemented during construction of the 100 Megavolt Cryomodule (C100 CM) for Jefferson Lab’s 12 GeV Upgrade Project. The C100 CM contains several essential subsystems that require pressure safety measures: piping in the supply and return end cans, piping in the thermal shield and the helium headers, the helium vessel assembly which includes high RRR niobium cavities, the end cans, and the vacuum vessel. Due to the vessel sizes and pressure ranges, applicable national consensus code rules are applied. When national consensus codes are not applicable, equivalent design and fabrication approaches are identified and implemented. Considerations for design, material qualification, fabrication, inspection and examination are summarized. In addition, JLAB’s methodologies for implementation of the 10 CFR 851 requirements are described.

  15. Structural and electrical properties of In-implanted Ge

    SciTech Connect (OSTI)

    Feng, R. Kremer, F.; Mirzaei, S.; Medling, S. A.; Ridgway, M. C.; Sprouster, D. J.; Decoster, S.; Glover, C. J.; Russo, S. P.

    2015-10-28

    We report on the effects of dopant concentration on the structural and electrical properties of In-implanted Ge. For In concentrations of ≤ 0.2 at. %, extended x-ray absorption fine structure and x-ray absorption near-edge structure measurements demonstrate that all In atoms occupy a substitutional lattice site while metallic In precipitates are apparent in transmission electron micrographs for In concentrations ≥0.6 at. %. Evidence of the formation of In-vacancy complexes deduced from extended x-ray absorption fine structure measurements is complimented by density functional theory simulations. Hall effect measurements of the conductivity, carrier density, and carrier mobility are then correlated with the substitutional In fraction.

  16. Complexes of self-interstitials with oxygen atoms in Ge

    SciTech Connect (OSTI)

    Khirunenko, L. I.; Pomozov, Yu. V.; Sosnin, M. G.; Abrosimov, N. V.; Riemann, H.

    2014-02-21

    Interactions of germanium self-interstitials with interstitial oxygen atoms in Ge subjected to irradiation at ?80 K and subsequently to annealing have been studied. To distinguish the processes involving vacancies and self-interstitials the doping with tin was used. It was shown that absorption lines with maximum at 602, 674, 713 and 803 cm{sup ?1} are self-interstitials-related. Two lines at 602 and 674, which develop upon annealing in the temperature range 180240 K, belong to IO complexes, while the bands at 713 and 803 cm{sup ?1}, which emerge after annealing at T>220 K, are associated with I{sub 2}O. It is argued that the annealing of IO occurs by two mechanisms: by dissociation and by diffusion.

  17. Studies of beam halo formation in the 12GeV CEBAF design

    SciTech Connect (OSTI)

    Yves Roblin; Arne Freyberger

    2007-06-01

    Beam halo formation in the beam transport design for the Jefferson Lab 12GeV upgrade was investigated using 12GeV beam transport models as well as data from 6GeV CEBAF operations. Various halo sources were considered; these covered both nuclear interactions with beam gas as well as optics-related effects such as non linearities in the magnetic fields of the transport elements. Halo due to beam gas scattering was found to be less of a problem at 12GeV compared to the 6GeV machine. Halo due to non linear effects of magnetic elements was characterized as a function of beam orbit and functional forms of the distribution were derived. These functional forms were used as inputs in subsequent detector optimizations studies.

  18. Effects of Laser Wavelength and Fluence in Pulsed Laser Deposition of Ge Films

    SciTech Connect (OSTI)

    Yap, Seong Shan; Reenaas, Turid Worren; Siew, Wee Ong; Tou, Teck Yong; Ladam, Cecile

    2011-03-30

    Nanosecond lasers with ultra-violet, visible and infrared wavelengths: KrF (248 nm, 25 ns) and Nd:YAG (1064 nm, 532 nm, 355 nm, 5 ns) were used to ablate polycrystalline Ge target and deposit Ge films in vacuum (<10-6 Torr). Time-integrated optical emission spectra were obtained for laser fluence from 0.5-10 J/cm{sup 2}. Neutrals and ionized Ge species in the plasma plume were detected by optical emission spectroscopy. Ge neutrals dominated the plasma plume at low laser fluence while Ge{sup +} ions above some threshold fluence. The deposited amorphous thin-film samples consisted of particulates of size from nano to micron. The relation of the film properties and plume species at different laser fluence and wavelengths were discussed.

  19. Local order origin of thermal stability enhancement in amorphous Ag doping GeTe

    SciTech Connect (OSTI)

    Xu, L.; Li, Y.; Yu, N. N.; Zhong, Y. P.; Miao, X. S.

    2015-01-19

    We demonstrate the impacts of Ag doping on the local atomic structure of amorphous GeTe phase-change material. The variations of phonon vibrational modes, boding nature, and atomic structure are shown by Raman, X-ray photoelectron spectroscopy, and ab initio calculation. Combining the experiments and simulations, we observe that the number of Ge atoms in octahedral site decreases and that in tetrahedral site increases. This modification in local order of GeTe originating from the low valence element will affect the crystallization behavior of amorphous GeTe, which is verified by differential scanning calorimetry and transmission electron microscope results. This work not only gives the analysis on the structural change of GeTe with Ag dopants but also provides a method to enhance the thermal stability of amorphous phase-change materials for memory and brain-inspired computing applications.

  20. The reliability studies of nano-engineered SiGe HBTs using Pelletron accelerator

    SciTech Connect (OSTI)

    Prakash, A. P. Gnana Praveen, K. C.; Pushpa, N.; Cressler, John D.

    2015-05-15

    The effects of high energy ions on the electrical characteristics of silicon-germanium heterojunction bipolar transistors (SiGe HBTs) were studied in the total dose of ranging from 600 krad to 100 Mrad (Si). The two generations (50 GHz and 200 GHz) of SiGe HBTs were exposed to 50 MeV lithium, 75 MeV boron and 100 MeV oxygen ions. The electrical characteristics of SiGe HBTs were studied before and after irradiation. The SiGe HBTs were exposed to {sup 60}Co gamma radiation in the same total dose. The results are systematically compared in order to understand the interaction of ions and ionizing radiation with SiGe HBTs.

  1. Ultra-high frequency photoconductivity decay in GaAs/Ge/GaAs double heterostructure grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Hudait, M. K.; Zhu, Y.; Johnston, S. W.; Maurya, D.; Priya, S.; Umbel, R.

    2013-03-04

    GaAs/Ge/GaAs double heterostructures (DHs) were grown in-situ using two separate molecular beam epitaxy chambers. High-resolution x-ray rocking curve demonstrates a high-quality GaAs/Ge/GaAs heterostructure by observing Pendelloesung oscillations. The kinetics of the carrier recombination in Ge/GaAs DHs were investigated using photoconductivity decay measurements by the incidence excitation from the front and back side of 15 nm GaAs/100 nm Ge/0.5 {mu}m GaAs/(100)GaAs substrate structure. High-minority carrier lifetimes of 1.06-1.17 {mu}s were measured when excited from the front or from the back of the Ge epitaxial layer, suggests equivalent interface quality of GaAs/Ge and Ge/GaAs. Wavelength-dependent minority carrier recombination properties are explained by the wavelength-dependent absorption coefficient of Ge.

  2. All-epitaxial Co{sub 2}FeSi/Ge/Co{sub 2}FeSi trilayers fabricated...

    Office of Scientific and Technical Information (OSTI)

    Ge and Cosub 2FeSi enable to promote the 2D epitaxial growth of Ge up to 5 nm at a ... Country of Publication: United States Language: English Subject: 36 MATERIALS SCIENCE; 71 ...

  3. Parity Violation Inelastic Scattering Experiments at 6 GeV and 12 GeV Jefferson Lab

    SciTech Connect (OSTI)

    Sulkosky, Vincent A.; et. al.,

    2015-03-01

    We report on the measurement of parity-violating asymmetries in the deep inelastic scattering and nucleon resonance regions using inclusive scattering of longitudinally polarized electrons from an unpolarized deuterium target. The effective weak couplings C$_{2q}$ are accessible through the deep-inelastic scattering measurements. Here we report a measurement of the parity-violating asymmetry, which yields a determination of 2C$_{2u}$ - C$_{2d}$ with an improved precision of a factor of five relative to the previous result. This result indicates evidence with 95% confidence that the 2C$_{2u}$ - C$_{2d}$ is non-zero. This experiment also provides the first parity-violation data covering the whole resonance region, which provide constraints on nucleon resonance models. Finally, the program to extend these measurements at Jefferson Lab in the 12 GeV era using the Solenoidal Large Intensity Device was also discussed.

  4. Correlation Between Optical Properties And Chemical Composition Of Sputter-deposited Germanium Cxide (GeOx) Films

    SciTech Connect (OSTI)

    Murphy, Neil R.; Grant, J. T.; Sun, L.; Jones, J. G.; Jakubiak, R.; Shutthanandan, V.; Ramana, Chintalapalle V.

    2014-03-18

    Germanium oxide (GeOx) films were grown on (1 0 0) Si substrates by reactive Direct-Current (DC) magnetron sputter-deposition using an elemental Ge target. The effects of oxygen gas fraction, Г = O2/(Ar + O2), on the deposition rate, structure, chemical composition and optical properties of GeOx films have been investigated. The chemistry of the films exhibits an evolution from pure Ge to mixed Ge + GeO + GeO2 and then finally to GeO2 upon increasing Г from 0.00 to 1.00. Grazing incidence X-ray analysis indicates that the GeOx films grown were amorphous. The optical properties probed by spectroscopic ellipsometry indicate that the effect of Г is significant on the optical constants of the GeOx films. The measured index of refraction (n) at a wavelength (λ) of 550 nm is 4.67 for films grown without any oxygen, indicating behavior characteristic of semiconducting Ge. The transition from germanium to mixed Ge + GeO + GeO2 composition is associated with a characteristic decrease in n (λ = 550 nm) to 2.62 and occurs at Г = 0.25. Finally n drops to 1.60 for Г = 0.50–1.00, where the films become GeO2. A detailed correlation between Г, n, k and stoichiometry in DC sputtered GeOx films is presented and discussed.

  5. EXC-12-0001, EXC-12-0002, EXC-12-0003- In the Matter of Philips Lighting Company, GE Lighting, and OSRAM SYLVANIA, Inc.

    Office of Energy Efficiency and Renewable Energy (EERE)

    On April 16, 2012, OHA issued a decision granting Applications for Exception filed respectively by Philips Lighting Company (Philips), GE Lighting (GE) and OSRAM SYLVANIA, Inc. (OSI) (collectively,...

  6. Structural, thermal, and photoacoustic study of nanocrystalline Cr{sub 3}Ge produced by mechanical alloying

    SciTech Connect (OSTI)

    Prates, P. B.; Maliska, A. M.; Ferreira, A. S.; Borges, Z. V.; Lima, J. C. de

    2015-10-21

    A thermodynamic analysis of the Cr-Ge system suggested that it was possible to produce a nanostructured Cr{sub 3}Ge phase by mechanical alloying. The same analysis showed that, due to low activation energies, Cr-poor crystalline and/or amorphous alloy could also be formed. In fact, when the experiment was performed, Cr{sub 11}Ge{sub 19} and amorphous phases were present for small milling times. For milling times larger than 15 h these additional phases decomposed and only the nanostructured Cr{sub 3}Ge phase remained up to the highest milling time used (32 h). From the differential scanning calorimetry measurements, the Avrami exponent n was obtained, indicating that the nucleation and growth of the nanostructured Cr{sub 3}Ge phase may be restricted to one or two dimensions, where the Cr and Ge atoms diffuse along the surface and grain boundaries. In addition, contributions from three-dimensional diffusion with a constant nucleation rate may be present. The thermal diffusivity of the nanostructured Cr{sub 3}Ge phase was determined by photoacoustic absorption spectroscopy measurements.

  7. Hydrogen Sensor Based on Pd/GeO{sub 2} Using a Low Cost Electrochemical Deposition

    SciTech Connect (OSTI)

    Jawad, M. J.; Hashim, M. R.; Ali, N. K.

    2011-05-25

    This work reports on a synthesis of sub micron germanium dioxide (GeO{sub 2}) on porous silicon (PS) by electrochemical deposition. n-type Si (100) wafer was used to fabricate (PS) using conventional method of electrochemical etching in HF based solution. A GeCl{sub 4} was directly hydrolyzed by hydrogen peroxide to produce pure GeO{sub 2}, and then electrochemically deposited on PS. Followed by palladium (Pd) contact on GeO{sub 2} /PS was achieved by using RF sputtering technique. The grown GeO{sub 2} crystals were characterized using SEM and EDX. I-V characteristics of Pd/ GeO{sub 2} were recorded before and after hydrogen gas exposure as well as with different H{sub 2} concentrations and different applied temperatures. The sensitivity of Pd/ GeO{sub 2} also has been investigated it could be seen to increase significantly with increased hydrogen concentration while it decreased with increase temperature.

  8. Density functional theory calculations of stability and diffusion mechanisms of impurity atoms in Ge crystals

    SciTech Connect (OSTI)

    Maeta, Takahiro; Sueoka, Koji

    2014-08-21

    Ge-based substrates are being developed for applications in advanced nano-electronic devices because of their higher intrinsic carrier mobility than Si. The stability and diffusion mechanism of impurity atoms in Ge are not well known in contrast to those of Si. Systematic studies of the stable sites of 2nd to 6th row element impurity atoms in Ge crystal were undertaken with density functional theory (DFT) and compared with those in Si crystal. It was found that most of the impurity atoms in Ge were stable at substitutional sites, while transition metals in Si were stable at interstitial sites and the other impurity atoms in Si were stable at substitutional sites. Furthermore, DFT calculations were carried out to clarify the mechanism responsible for the diffusion of impurity atoms in Ge crystals. The diffusion mechanism for 3d transition metals in Ge was found to be an interstitial-substitutional diffusion mechanism, while in Si this was an interstitial diffusion mechanism. The diffusion barriers in the proposed diffusion mechanisms in Ge and Si were quantitatively verified by comparing them to the experimental values in the literature.

  9. Tuning the properties of Ge-quantum dots superlattices in amorphous silica matrix through deposition conditions

    SciTech Connect (OSTI)

    Pinto, S. R. C.; Ramos, M. M. D.; Gomes, M. J. M.; Buljan, M.; Chahboun, A.; Roldan, M. A.; Molina, S. I.; Bernstorff, S.; Varela, M.; Pennycook, S. J.; Barradas, N. P.; Alves, E.

    2012-04-01

    In this work, we investigate the structural properties of Ge quantum dot lattices in amorphous silica matrix, prepared by low-temperature magnetron sputtering deposition of (Ge+SiO{sub 2})/SiO{sub 2} multilayers. The dependence of quantum dot shape, size, separation, and arrangement type on the Ge-rich (Ge + SiO{sub 2}) layer thickness is studied. We show that the quantum dots are elongated along the growth direction, perpendicular to the multilayer surface. The size of the quantum dots and their separation along the growth direction can be tuned by changing the Ge-rich layer thickness. The average value of the quantum dots size along the lateral (in-plane) direction along with their lateral separation is not affected by the thickness of the Ge-rich layer. However, the thickness of the Ge-rich layer significantly affects the quantum dot ordering. In addition, we investigate the dependence of the multilayer average atomic composition and also the quantum dot crystalline quality on the deposition parameters.

  10. Single-crystalline CuGeO{sub 3} nanorods: Synthesis, characterization and properties

    SciTech Connect (OSTI)

    Wang, Fangfang; Xing, Yan; Su, Zhongmin; Song, Shuyan

    2013-07-15

    Graphical abstract: - Highlights: Single crystalline CuGeO{sub 3} nanorods were prepared via a hydrothermal route. The material exhibits greatly enhanced activity in photocatalytic degradation of dyes. The magnetic susceptibility measurements indicate spin-Peierls transition properties. CuGeO{sub 3} nanorods may be of potential application in future integrated optical devices. - Abstract: Single crystalline CuGeO{sub 3} nanorods with a diameter of 2035 nm and a length up to 1 ?m have been prepared via a facile hydrothermal route with the assistance of ethylenediamine. Some influencing factors such as the reaction time, reaction temperature, the volume of ethylenediamine were revealed to play crucial roles in the formation of the CuGeO{sub 3} nanorods. A possible growth mechanism was proposed based on the experimental results. Significantly, this is the first time that CuGeO{sub 3} was used as a photocatalyst for organic pollutant degradation under UV light irradiation. The reaction constant (k) of CuGeO{sub 3} nanorods was five times that of the sample prepared by solid-state reaction under UV light irradiation. Additionally, the optical and magnetic properties of CuGeO{sub 3} nanorods were systematically studied.

  11. Hydrogen interaction kinetics of Ge dangling bonds at the Si{sub 0.25}Ge{sub 0.75}/SiO{sub 2} interface

    SciTech Connect (OSTI)

    Stesmans, A. Nguyen Hoang, T.; Afanas'ev, V. V.

    2014-07-28

    The hydrogen interaction kinetics of the GeP{sub b1} defect, previously identified by electron spin resonance (ESR) as an interfacial Ge dangling bond (DB) defect occurring in densities ?7??10{sup 12}?cm{sup ?2} at the SiGe/SiO{sub 2} interfaces of condensation grown (100)Si/a-SiO{sub 2}/Ge{sub 0.75}Si{sub 0.25}/a-SiO{sub 2} structures, has been studied as function of temperature. This has been carried out, both in the isothermal and isochronal mode, through defect monitoring by capacitance-voltage measurements in conjunction with ESR probing, where it has previously been demonstrated the defects to operate as negative charge traps. The work entails a full interaction cycle study, comprised of analysis of both defect passivation (pictured as GeP{sub b1}-H formation) in molecular hydrogen (?1?atm) and reactivation (GeP{sub b1}-H dissociation) in vacuum. It is found that both processes can be suitably described separately by the generalized simple thermal (GST) model, embodying a first order interaction kinetics description based on the basic chemical reactions GeP{sub b1}?+?H{sub 2}???GeP{sub b1}H?+?H and GeP{sub b1}H???GeP{sub b1}?+?H, which are found to be characterized by the average activation energies E{sub f}?=?1.44??0.04?eV and E{sub d}?=?2.23??0.04?eV, and attendant, assumedly Gaussian, spreads ?E{sub f}?=?0.20??0.02?eV and ?E{sub d}?=?0.15??0.02?eV, respectively. The substantial spreads refer to enhanced interfacial disorder. Combination of the separately inferred kinetic parameters for passivation and dissociation results in the unified realistic GST description that incorporates the simultaneous competing action of passivation and dissociation, and which is found to excellently account for the full cycle data. For process times t{sub a}???35?min, it is found that even for the optimum treatment temperature ?380?C, only ?60% of the GeP{sub b1} system can be electrically silenced, still far remote from device grade level. This ineffectiveness is

  12. Effects of rapid thermal annealing on the structural and local atomic properties of ZnO: Ge nanocomposite thin films

    SciTech Connect (OSTI)

    Ceylan, Abdullah Ozcan, Sadan; Rumaiz, Abdul K.; Caliskan, Deniz; Ozbay, Ekmel; Woicik, J. C.

    2015-03-14

    We have investigated the structural and local atomic properties of Ge nanocrystals (Ge-ncs) embedded ZnO (ZnO: Ge) thin films. The films were deposited by sequential sputtering of ZnO and Ge thin film layers on z-cut quartz substrates followed by an ex-situ rapid thermal annealing (RTA) at 600 °C for 30, 60, and 90 s under forming gas atmosphere. Effects of RTA time on the evolution of Ge-ncs were investigated by x-ray diffraction (XRD), scanning electron microscopy (SEM), hard x-ray photoelectron spectroscopy (HAXPES), and extended x-ray absorption fine structure (EXAFS). XRD patterns have clearly shown that fcc diamond phase Ge-ncs of sizes ranging between 18 and 27 nm are formed upon RTA and no Ge-oxide peak has been detected. However, cross-section SEM images have clearly revealed that after RTA process, Ge layers form varying size nanoclusters composed of Ge-ncs regions. EXAFS performed at the Ge K-edge to probe the local atomic structure of the Ge-ncs has revealed that as prepared ZnO:Ge possesses Ge-oxide but subsequent RTA leads to crystalline Ge structure without the oxide layer. In order to study the occupied electronic structure, HAXPES has been utilized. The peak separation between the Zn 2p and Ge 3d shows no significant change due to RTA. This implies little change in the valence band offset due to RTA.

  13. Altran and GE Announce Intention to Form an Alliance to Drive Game-Changing

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Outcomes Across Industry | GE Global Research Altran and GE Announce Intention to Form an Alliance to Drive Game-Changing Outcomes Across Industry Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Altran and GE Announce Intention to Form an Alliance to Drive Game-Changing Outcomes Across Industry Both companies to

  14. Characterization of SiGe/Si multi-quantum wells for infrared sensing

    SciTech Connect (OSTI)

    Moeen, M.; Salemi, A.; stling, M.; Radamson, H. H., E-mail: rad@kth.se [School of Information and Communication Technology, KTH Royal Institute of Technology, Stockholm, 16640 Kista (Sweden); Kolahdouz, M. [School of Electrical and Computer Engineering, University of Tehran, Tehran (Iran, Islamic Republic of)] [School of Electrical and Computer Engineering, University of Tehran, Tehran (Iran, Islamic Republic of)

    2013-12-16

    SiGe epitaxial layers are integrated as an active part in thermal detectors. To improve their performance, deeper understanding of design parameters, such as thickness, well periodicity, quality, and strain amount, of the layers/interfaces is required. Oxygen (22500??10{sup ?9}?Torr) was exposed prior or during epitaxy of SiGe/Si multilayers. In this range, samples with 10?nTorr oxygen were processed to investigate layer quality and noise measurements. Temperature coefficient of resistance was also measured to evaluate the thermal response. These results demonstrate sensitivity of SiGe-based devices to size and location of defects in the structure.

  15. Research Perspectives at Jefferson Lab: 12 GeV and Beyond

    SciTech Connect (OSTI)

    Kees de Jager

    2002-09-01

    The plans for upgrading the CEBAF accelerator at Jefferson Lab to 12 GeV are presented. The research program supporting that upgrade are illustrated with a few selected examples. The instrumentation under design to carry out that research program is discussed. Finally, a conceptual design of a future upgrade which combines a 25 GeV fixed-target facility and an electron-ion collider facility at a luminosity of up to 10{sup 35}cm{sup -2}s{sup -1} and a CM energy of over 40 GeV.

  16. Atomic and electronic structure of the ferroelectric BaTiO{sub 3}/Ge(001)

    Office of Scientific and Technical Information (OSTI)

    interface (Journal Article) | SciTech Connect Atomic and electronic structure of the ferroelectric BaTiO{sub 3}/Ge(001) interface Citation Details In-Document Search Title: Atomic and electronic structure of the ferroelectric BaTiO{sub 3}/Ge(001) interface In this study, we demonstrate the epitaxial growth of BaTiO{sub 3} on Ge(001) by molecular beam epitaxy using a thin Zintl template buffer layer. A combination of density functional theory, atomic-resolution electron microscopy and in situ

  17. JLab's 12 GeV Upgrade Project Clears Critical Hurdle | Jefferson Lab

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    JLab's 12 GeV Upgrade Project Clears Critical Hurdle JLab's 12 GeV Upgrade Project Clears Critical Hurdle Independent Project Review committee members Independent Project Review committee members, visiting JLab to evaluate the readiness of the 12 GeV Upgrade project, tour Hall B during their site visit. Here they view the CEBAF Large Acceptance Spectrometer as Hall B Leader Volker Burkert and Lead Engineer Dave Kashy explain the system. NEWPORT NEWS, VA - The U.S. Department of Energy's Thomas

  18. Jefferson Lab to Mark the End of CEBAF 6 GeV Operations on May 18 |

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Jefferson Lab to Mark the End of CEBAF 6 GeV Operations on May 18 Jefferson Lab to Mark the End of CEBAF 6 GeV Operations on May 18 CEBAF_Aerial.jpg Jefferson Lab will officially end 6 GeV operations of the Continuous Electron Beam Accelerator Facility during a short ceremony planned for May 18 in the Machine Control Center. This aerial photo depicts the basic outline of the tunnel housing CEBAF - the accelerator and the experimental halls. NEWPORT NEWS, VA - The U.S. Department of Energy's

  19. Neutron Cross-Section Evaluations for 70,72,73,74,76Ge

    SciTech Connect (OSTI)

    Iwamoto, O.; Herman, M.; Mughabghab, S.F.; Oblozinsky, P.; Trkov, A.

    2005-05-24

    Entirely new evaluations have been performed for neutrons on all isotopes of Ge, from a thermal energy up to 20 MeV, with a focus on photon production. The resonance parameters were considerably improved compared to earlier evaluations. The fast-neutron region has been evaluated using the EMPIRE-2.19 code. The results were validated against photon data on Fe and Nb. Isotopic evaluations for Ge were summed up and compared with available measurements on natural Ge. Various quantities related to photon production, showing strong dependence on neutron incident energy, are discussed.

  20. Early Commissioning Experience and Future Plans for the 12 GeV Continuous Electron Beam Accelerator Facility

    SciTech Connect (OSTI)

    Spata, Michael F.

    2014-12-01

    Jefferson Lab has recently completed the accelerator portion of the 12 GeV Upgrade for the Continuous Electron Beam Accelerator Facility. All 52 SRF cryomodules have been commissioned and operated with beam. The initial beam transport goals of demonstrating 2.2 GeV per pass, greater than 6 GeV in 3 passes to an existing experimental facility and greater than 10 GeV in 5-1/2 passes have all been accomplished. These results along with future plans to commission the remaining beamlines and to increase the performance of the accelerator to achieve reliable, robust and efficient operations at 12 GeV are presented.

  1. Potential improvements in SiGe radioisotope thermoelectric generator performance

    SciTech Connect (OSTI)

    Mowery, A.L.

    1999-01-01

    In accordance with NASA{close_quote}s slogan: {open_quotes}Better, Cheaper, Faster,{close_quotes} this paper will address potential improvements to SiGe RTG technology to make them Better. RTGs are doubtless cheaper than {open_quotes}paper designs{close_quotes} which are better and cheaper until development, performance and safety test costs are considered. RTGs have the advantage of being fully developed and tested in the rigors of space for over twenty years. Further, unless a new system can be accelerated tested, as were the RTGs, they cannot be deployed reliably unless a number of systems have succeeded for test periods exceeding the mission lifetime. Two potential developments are discussed that can improve the basic RTG performance by 10 to 40{sup +}{percent} depending on the mission profile. These improvements could be demonstrated in years. Accelerated testing could also be performed in this period to preserve existing RTG reliability. Data from a qualification tested RTG will be displayed, while not definitive, to support the conclusions. Finally, it is anticipated that other investigators will be encouraged to suggest further modifications to the basic RTG design to improve its performance. {copyright} {ital 1999 American Institute of Physics.}

  2. Multiple hadron production by 14. 5 GeV electron and positron scattering from nuclear targets

    SciTech Connect (OSTI)

    Degtyarenko, P.V.; Button-Shafer, J.; Elouadrhiri, L.; Miskimen, R.A.; Peterson, G.A.; Wang, K. ); Gavrilov, V.B.; Kossov, M.V.; Leksin, G.A.; Shuvalov, S.M. ); Dietrich, F.S.; Melnikoff, S.O.; Molitoris, J.D.; Bibber, K.V. )

    1994-08-01

    Multiple proton and pion electroproduction from nuclei are studied. Final states including at least two protons produced by the interaction of 14.5 GeV electrons and positrons with light nuclei (mainly [sup 12]C and [sup 16]O) have been measured, and compared with analogous data from [sup 40]Ar. Scattered electrons and positrons were detected in the energy transfer range from 0.2 to 12.5 GeV, and four-momentum transfer squared range from 0.1 to 5.0 GeV[sup 2]/[ital c][sup 2]. Phenomenological characteristics of the secondary hadron production cross sections such as temperature and velocity of the effective source of hadrons were found to be dependent on energy transfer to the nucleus and independent on the four-momentum transfer squared at energy transfers greater than 2 GeV.

  3. Altran and GE Announce Intention to Form an Alliance to Drive...

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Altran and GE's collaboration takes place in our mutual will to combine our Machine-driven Big Data domain expertise and lead the way to new industrial markets and business models ...

  4. New Global Oil & Gas Hub in Oklahoma City | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Selects Oklahoma City Site for New Global Hub of Oil & Gas Technology Innovation Click to ... GE Selects Oklahoma City Site for New Global Hub of Oil & Gas Technology Innovation New ...

  5. A drone's-eye view of a wind turbine | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Flying above the innovative ecoROTR wind turbine in a drone Click to email this to a ... Flying above the innovative ecoROTR wind turbine in a drone GE spent a week flying ...

  6. Spin-Glass Behavior in a Giant Unit Cell Compound Tb117Fe52Ge113...

    Office of Scientific and Technical Information (OSTI)

    Journal Article: Spin-Glass Behavior in a Giant Unit Cell Compound Tb117Fe52Ge113.8(1) Citation Details In-Document Search Title: Spin-Glass Behavior in a Giant Unit Cell Compound ...

  7. Spin-Glass Behavior in a Giant Unit Cell Compound Tb117Fe52Ge113...

    Office of Scientific and Technical Information (OSTI)

    Spin-Glass Behavior in a Giant Unit Cell Compound Tb117Fe52Ge113.8(1) Citation Details In-Document Search Title: Spin-Glass Behavior in a Giant Unit Cell Compound ...

  8. Project planning workshop 6-GeV synchrotron light source: Volume 2

    SciTech Connect (OSTI)

    Not Available

    1986-01-01

    A series of work sheets, graphs, and printouts are given which detail the work breakdown structure, cost, and manpower requirements for the 6 GeV Synchrotron Light Source. (LEW)

  9. The JLAB 12 GeV Energy Upgrade of CEBAF (Conference) | SciTech...

    Office of Scientific and Technical Information (OSTI)

    This presentation should describe the progress of the 12GeV Upgrade of CEBAF at Jefferson Lab. The status of the upgrade should be presented as well as details on the construction, ...

  10. CEBAF at 12 and 25 GeV (Conference) | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    Formal construction start could be in 2006. The same cryomodule design would subsequently be the building block for an eventual upgrade to 25 GeV. Authors: Harwood, Leigh ; Reece, ...

  11. How a Minecraft book got noticed on Amazon | GE Global Research

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    engineer uses research tools to market Minecraft books Click to email this to a friend ... GE engineer uses research tools to market Minecraft books Mark Cheverton 2015.03.09 Book ...

  12. Electronic and magnetic properties of Si substituted Fe3Ge

    SciTech Connect (OSTI)

    Shanavas, Kavungal Veedu; McGuire, Michael A.; Parker, David S.

    2015-09-23

    Using first principles calculations we studied the effect of Si substitution in the hexagonal Fe3Ge. We find the low temperature magnetic anisotropy in this system to be planar and originating mostly from the spin-orbit coupling in Fe-d states. Reduction of the unitcell volume reduces the in-plane magnetic anisotropy, eventually turning it positive which reorients the magnetic moments to the axial direction. We find that substituting Ge with the smaller Si ions also reduces the anisotropy, potentially enhancing the region of stability of the axial magnetization, which is beneficial for magnetic applications. Thus our experimental measurements on samples of Fe3Ge1–xSix confirm these predictions and show that substitution of about 6% of the Ge with Si increases by approximately 35 K the temperature range over which anisotropy is uniaxial.

  13. Ge Interface Engineering with Ozone-oxidation for Low Interface State Density

    SciTech Connect (OSTI)

    Kuzum, Duygu; Krishnamohan, T.; Pethe, Abhijit J.; Okyay, Ali, K.; Oshima, Yasuhiro; Sun, Yun; McVittie, Jim P.; Pianetta, Piero A.; McIntyre, Paul C.; Saraswat, Krishna C.; /Stanford U., CIS

    2008-06-02

    Passivation of Ge has been a critical issue for Ge MOS applications in future technology nodes. In this letter, we introduce ozone-oxidation to engineer Ge/insulator interface. Interface states (D{sub it}) values across the bandgap and close to conduction bandedge were extracted using conductance technique at low temperatures. D{sub it} dependency on growth conditions was studied. Minimum D{sub it} of 3 x 10{sup 11} cm{sup -2} V{sup -1} was demonstrated. Physical quality of the interface was investigated through Ge 3d spectra measurements. We found that the interface and D{sub it} is strongly affected by the distribution of oxidation states and quality of the suboxide.

  14. Ultrahigh-pressure polyamorphism in GeO 2 glass with coordination...

    Office of Scientific and Technical Information (OSTI)

    SciTech Connect Search Results Journal Article: Ultrahigh-pressure polyamorphism in GeO 2 ... Type: Published Article Journal Name: Proceedings of the National Academy of Sciences of ...

  15. Ultrahigh-pressure polyamorphism in GeO 2 glass with coordination...

    Office of Scientific and Technical Information (OSTI)

    Ultrahigh-pressure polyamorphism in GeO 2 glass with coordination number >6 This content ... Type: Published Article Journal Name: Proceedings of the National Academy of Sciences of ...

  16. Metallization and Hall-effect of Mg{sub 2}Ge under high pressure

    SciTech Connect (OSTI)

    Li, Yuqiang; Gao, Yang; Han, Yonghao Liu, Cailong; Peng, Gang; Ke, Feng; Gao, Chunxiao; Wang, Qinglin; Ma, Yanzhang

    2015-10-05

    The electrical transport properties of Mg{sub 2}Ge under high pressure were studied with the in situ temperature-dependent resistivity and Hall-effect measurements. The theoretically predicted metallization of Mg{sub 2}Ge was definitely found around 7.4 GPa by the temperature-dependent resistivity measurement. Other two pressure-induced structural phase transitions were also reflected by the measurements. Hall-effect measurement showed that the dominant charge carrier in the metallic Mg{sub 2}Ge was hole, indicating the “bad metal” nature of Mg{sub 2}Ge. The Hall mobility and charge carrier concentration results pointed out that the electrical transport behavior in the antifluorite phase was controlled by the increase quantity of drifting electrons under high pressure, but in both anticotunnite and Ni{sub 2}In-type phases it was governed by the Hall mobility.

  17. Black GE based on crystalline/amorphous core/shell nanoneedle arrays

    DOE Patents [OSTI]

    Javey, Ali; Chueh, Yu-Lun; Fan, Zhiyong

    2014-03-04

    Direct growth of black Ge on low-temperature substrates, including plastics and rubber is reported. The material is based on highly dense, crystalline/amorphous core/shell Ge nanoneedle arrays with ultrasharp tips (.about.4 nm) enabled by the Ni catalyzed vapor-solid-solid growth process. Ge nanoneedle arrays exhibit remarkable optical properties. Specifically, minimal optical reflectance (<1%) is observed, even for high angles of incidence (.about.75.degree.) and for relatively short nanoneedle lengths (.about.1 .mu.m). Furthermore, the material exhibits high optical absorption efficiency with an effective band gap of .about.1 eV. The reported black Ge can have important practical implications for efficient photovoltaic and photodetector applications on nonconventional substrates.

  18. Plastic relaxation in GeSi layers on Si (001) and Si (115) substrates

    SciTech Connect (OSTI)

    Drozdov, Yu. N. Drozdov, M. N.; Yunin, P. A.; Yurasov, D. V.; Shaleev, M. A.; Novikov, A. V.

    2015-01-15

    It is demonstrated using X-ray diffraction and atomic force microscopy that elastic stresses in GeSi layers on Si (115) substrates relax more effectively than in the same layers on Si (001) substrates. This fact is attributed to the predominant contribution of one of the (111) slip planes on the (115) cut. The atomicforce-microscopy image of the GeSi/Si(115) surface reveals unidirectional slip planes, while the GeSi/Si(001) image contains a grid of orthogonal lines and defects at the points of their intersection. As a result, thick GeSi layers on Si (115) have a reduced surface roughness. A technique for calculating the parameters of relaxation of the layer on the Si (115) substrate using X-ray diffraction data is discussed.

  19. Ultrafast Terahertz-Induced Response of GeSbTe Phase-Change Materials...

    Office of Scientific and Technical Information (OSTI)

    Title: Ultrafast Terahertz-Induced Response of GeSbTe Phase-Change Materials ... Resource Relation: Journal Name: Appl. Phys. Lett.; Journal Volume: 104; Journal Issue: 25 Research ...

  20. Early diagenesis of germanium in sediments of the Antarctic South Atlantic: In search of the missing Ge sink

    SciTech Connect (OSTI)

    King, S.L.; Froelich, P.N.; Jahnke, R.A.

    2000-04-01

    Pore water and solid-phase geochemistry profiles were obtained from several cores between 41{degree}S and 53{degree}S in the Atlantic sector of the Southern Ocean. Pore water nitrate, manganese, and iron profiles delineate standard redox zones in these sediments, and help characterize those with classic vs. burn-down behaviors. Pore water Si and Ge profiles demonstrate that Ge released during opal dissolution is removed pervasively throughout the uppermost interval of silicate release, and also downwards into the suboxic zone by as yet unidentified precipitation mechanisms. These results indicate that early diagenesis of Ge is uncoupled from that of opal. Solid-phase extractions (Fe, Mn, U, Mo, Ge, Cu, Ni, Co, V, and Cd) in a few cores suggest that anthigenic Ge removal in the suboxic zone is not associated with peaks in authigenic Mn cycling (MnO{sub 2} and related metals) but rather with processes deeper in the sediments, perhaps Fe or U diagenesis. Below the interval of Ge removal, pre water Ge increases linearly with depth by over two orders of magnitude, indicating a deep (below recovery) source of large magnitude. The fraction of opal-derived Ge precipitated authigenically in these sediments ranges from {approximately}1 to 96% and correlates strongly with the detrital fraction as well as the detrital to opal ratio, both of which generally decrease from north to south. The Ge sink observed in these sediments would need to be globally representative to account for the entire missing Ge sink in today's oceanic Ge balance, which seems unlikely. Benthic fluxes of Ge and Si estimated from these pore water profiles and from measurements in three benthic flux chamber experiments at high carbon-rain continental margin sites demonstrate that the Ge/Si rate released from the seafloor in locations with high benthic silicate and carbon fluxes is congruent with Holocene opal dissolution (Ge/Si {approximately} 0.7 x 10{sup {minus}6}). In contrast, Ge/Si flux ratios in areas

  1. Strangelet search in S-W collisions at 200[ital A] GeV/[ital c

    SciTech Connect (OSTI)

    Borer, K.; Dittus, F.; Frei, D.; Hugentobler, E.; Klingenberg, R.; Moser, U.; Pretzl, K.; Schacher, J.; Stoffel, F.; Volken, W. ); Elsener, K.; Lohmann, K.D. ); Baglin, C.; Bussiere, A.; Guillaud, J.P. ); Appelquist, G.; Bohm, C.; Hovander, B.; Sellden, B.; Zhang, Q.P. )

    1994-03-07

    A search for new massive particles with a low charge to mass ratio in S-W collisions at a beam momentum of 200 GeV/[ital c] per nucleon is presented. Upper limits for the production of strangelets with a mass to charge ratio of up to 60 GeV/[ital c][sup 2] at rigidities of [plus minus]150 GV are reported.

  2. Beam On Target! - CEBAF Accelerator Achieves 12 GeV Commissioning Milestone

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    | Jefferson Lab Beam On Target! - CEBAF Accelerator Achieves 12 GeV Commissioning Milestone Beam On Target! CEBAF Accelerator Achieves 12 GeV Commissioning Milestone The accelerator crew on hand The accelerator crew on hand for the beam-on-target achievement included (l-r) Crew Chief Mike McCaughan, Accelerator Operators Dan Moser and Brandi Cade. Yves Roblin was the Accelerator Physics Experimental Liaison for the Hall A beamline, Accelerator Scientist Yan Wang recorded and provided insight

  3. Ultrafast Terahertz-Induced Response of GeSbTe Phase-Change Materials

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect Journal Article: Ultrafast Terahertz-Induced Response of GeSbTe Phase-Change Materials Citation Details In-Document Search Title: Ultrafast Terahertz-Induced Response of GeSbTe Phase-Change Materials Authors: Shu, Michael J. ; Zalden, Peter ; Chen, Frank ; Weems, Ben ; Chatzakis, Ioannis ; Xiong, Feng ; Jeyasingh, Rakesh ; Hoffmann, Matthias C. ; Pop, Eric ; Wong, H.-S.Philip ; Wuttig, Matthias ; Lindenberg, Aaron M. Publication Date: 2014-07-08 OSTI

  4. 1.3??m photoluminescence of Ge/GaAs multi-quantum-well structure

    SciTech Connect (OSTI)

    Aleshkin, V. Ya.; Dubinov, A. A. Kudryavtsev, K. E.; Rumyantsev, V. V.; Tonkikh, A. A.; Zakharov, N. D.; Zvonkov, B. N.

    2014-01-28

    In this paper, we report on photoluminescence studies of a multiple quantum well Ge/GaAs heterostructure grown by laser-assisted sputtering. A broad luminescence peak is found at about 1.3??m at room temperature. We attribute this peak to the direct band gap transitions between ?-valley electrons in the GaAs matrix and valence band heavy holes in Ge quantum wells.

  5. Interaction of Sn atoms with defects introduced by ion implantation in Ge substrate

    SciTech Connect (OSTI)

    Taoka, Noriyuki Fukudome, Motoshi; Takeuchi, Wakana; Arahira, Takamitsu; Sakashita, Mitsuo; Nakatsuka, Osamu; Zaima, Shigeaki

    2014-05-07

    The interaction of Sn atoms with defects induced by Sn implantation of Ge substrates with antimony (Sb) as an n-type dopant and the impact of H{sub 2} annealing on these defects were investigated by comparison with defects induced by Ge self-implantation. In the Ge samples implanted with either Sn or Ge, and annealed at temperatures of less than 200?C, divacancies, Sb-vacancy complexes with single or double acceptor-like states, and defects related to Sb and interstitial Ge atoms were present. On the other hand, after annealing at 500?C in an N{sub 2} or H{sub 2} atmosphere, defects with different structures were observed in the Sn-implanted samples by deep level transition spectroscopy. The energy levels of the defects were 0.33?eV from the conduction band minimum and 0.55?eV from the valence band maximum. From the capacitance-voltage (C-V) characteristics, interaction between Sn atoms and defects after annealing at 500?C was observed. The effect of H{sub 2} annealing at around 200?C was observed in the C-V characteristics, which can be attributed to hydrogen passivation, and this effect was observed in both the Ge- and Sn-implanted samples. These results suggest the presence of defects that interact with Sn or hydrogen atoms. This indicates the possibility of defect control in Ge substrates by Sn or hydrogen incorporation. Such defect control could yield high-performance Ge-based devices.

  6. Thermoelectric infrared microsensors based on a periodically suspended thermopile integrating nanostructured Ge/SiGe quantum dots superlattice

    SciTech Connect (OSTI)

    Ziouche, K. E-mail: Zahia.bougrioua@iemn.univ-lille1.fr; Bougrioua, Z. E-mail: Zahia.bougrioua@iemn.univ-lille1.fr; Lejeune, P.; Lasri, T.; Leclercq, D.; Savelli, G.; Hauser, D.; Michon, P.-M.

    2014-07-28

    This paper presents an original integration of polycrystalline SiGe-based quantum dots superlattices (QDSL) into Thermoelectric (TE) planar infrared microsensors (?SIR) fabricated using a CMOS technology. The nanostructuration in QDSL results into a considerably reduced thermal conductivity by a factor up to 10 compared to the one of standard polysilicon layers that are usually used for IR sensor applications. A presentation of several TE layers, QDSL and polysilicon, is given before to describe the fabrication of the thermopile-based sensors. The theoretical values of the sensitivity to irradiance of ?SIR can be predicted thanks to an analytical model. These findings are used to interpret the experimental measurements versus the nature of the TE layer exploited in the devices. The use of nanostructured QDSL as the main material in ?SIR thermopile has brought a sensitivity improvement of about 28% consistent with theoretical predictions. The impact of QDSL low thermal conductivity is damped by the contribution of the thermal conductivity of all the other sub-layers that build up the device.

  7. Embedded Ge nanocrystals in SiO{sub 2} synthesized by ion implantation

    SciTech Connect (OSTI)

    Baranwal, V. Pandey, Avinash C.; Gerlach, J. W.; Lotnyk, A.; Rauschenbach, B.; Karl, H.; Ojha, S.; Avasthi, D. K.; Kanjilal, D.

    2015-10-07

    200 nm thick SiO{sub 2} layers grown on Si substrates were implanted with 150 keV Ge ions at three different fluences. As-implanted samples were characterized with time-of-flight secondary ion mass spectrometry and Rutherford backscattering spectrometry to obtain depth profiles and concentration of Ge ions. As-implanted samples were annealed at 950 °C for 30 min. Crystalline quality of pristine, as-implanted, and annealed samples was investigated using Raman scattering measurements and the results were compared. Crystalline structure of as-implanted and annealed samples of embedded Ge into SiO{sub 2} matrix was studied using x-ray diffraction. No secondary phase or alloy formation of Ge was detected with x-ray diffraction or Raman measurements. Scanning transmission electron microscope measurements were done to get the nanocrystal size and localized information. The results confirmed that fluence dependent Ge nanocrystals of different sizes are formed in the annealed samples. It is also observed that Ge is slowly diffusing deeper into the substrate with annealing.

  8. In-situ crystallization of GeTe\\GaSb phase change memory stacked films

    SciTech Connect (OSTI)

    Velea, A.; Borca, C. N.; Grolimund, D.; Socol, G.; Galca, A. C.; Popescu, M.; Bokhoven, J. A. van

    2014-12-21

    Single and double layer phase change memory structures based on GeTe and GaSb thin films were deposited by pulsed laser deposition (PLD). Their crystallization behavior was studied using in-situ synchrotron techniques. Electrical resistance vs. temperature investigations, using the four points probe method, showed transition temperatures of 138 °C and 198 °C for GeTe and GaSb single films, respectively. It was found that after GeTe crystallization in the stacked films, Ga atoms from the GaSb layer diffused in the vacancies of the GeTe crystalline structure. Therefore, the crystallization temperature of the Sb-rich GaSb layer is decreased by more than 30 °C. Furthermore, at 210 °C, the antimony excess from GaSb films crystallizes as a secondary phase. At higher annealing temperatures, the crystalline Sb phase increased on the expense of GaSb crystalline phase which was reduced. Extended X-ray absorption fine structure (EXAFS) measurements at the Ga and Ge K-edges revealed changes in their local atomic environments as a function of the annealing temperature. Simulations unveil a tetrahedral configuration in the amorphous state and octahedral configuration in the crystalline state for Ge atoms, while Ga is four-fold coordinated in both as-deposited and annealed samples.

  9. Germanium subcells for multijunction GaInP/GaInAs/Ge solar cells

    SciTech Connect (OSTI)

    Kalyuzhnyy, N. A.; Gudovskikh, A. S.; Evstropov, V. V.; Lantratov, V. M.; Mintairov, S. A.; Timoshina, N. Kh.; Shvarts, M. Z.; Andreev, V. M.

    2010-11-15

    Photovoltaic converters based on n-GaInP/n-p-Ge heterostructures grown by the OMVPE under different conditions of formation of the p-n junction are studied. The heterostructures are intended for use as narrow-gap subcells of the GaInP/GaInAs/Ge three-junction solar cells. It is shown that, in Ge p-tn junctions, along with the diffusion mechanism, the tunneling mechanism of the current flow exists; therefore, the two-diode electrical equivalent circuit of the Ge p-n junction is used. The diode parameters are determined for both mechanisms from the analysis of both dark and 'light' current-voltage dependences. It is shown that the elimination of the component of the tunneling current allows one to increase the efficiency of the Ge subcell by {approx}1% with conversion of nonconcentrated solar radiation. The influence of the tunneling current on the efficiency of the Ge-based devices can be in practice reduced to zero at photogenerated current density of {approx}1.5 A/cm{sup 2} due to the use of the concentrated solar radiation.

  10. Microstructure study of the rare-earth intermetallic compounds R5(SixGe1-x)4 and R5(SixGe1-x)3

    SciTech Connect (OSTI)

    Cao, Qing

    2012-07-26

    The unique combination of magnetic properties and structural transitions exhibited by many members of the R{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4} family (R = rare earths, 0 ≤ x ≤ 1) presents numerous opportunities for these materials in advanced energy transformation applications. Past research has proven that the crystal structure and magnetic ordering of the R{sub 5(Si{sub x}Ge{sub 1-x}){sub 4} compounds can be altered by temperature, magnetic field, pressure and the Si/Ge ratio. Results of this thesis study on the crystal structure of the Er{sub 5}Si{sub 4} compound have for the first time shown that the application of mechanical forces (i.e. shear stress introduced during the mechanical grinding) can also result in a structural transition from Gd{sub 5}Si{sub 4}-type orthorhombic to Gd{sub 5}Si{sub 2}Ge{sub 2}-type monoclinic. This structural transition is reversible, moving in the opposite direction when the material is subjected to low-temperature annealing at 500 ˚C. Successful future utilization of the R{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4} family in novel devices depends on a fundamental understanding of the structure-property interplay on the nanoscale level, which makes a complete understanding of the microstructure of this family especially important. Past scanning electron microscopy (SEM) observation has shown that nanometer-thin plates exist in every R{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4} (“5:4”) phase studied, independent of initial parent crystal structure and composition. A comprehensive electron microscopy study including SEM, energy dispersive spectroscopy (EDS), selected area diffraction (SAD), and high resolution transmission electron microscopy (HRTEM) of a selected complex 5:4 compound based on Er rather than Gd, (Er{sub 0.9Lu{sub 0.1}){sub 5}Si{sub 4}, has produced data supporting the assumption that all the platelet-like features present in the R{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4} family are hexagonal R{sub 5}(Si{sub x}Ge{sub 1-x

  11. Electronic properties of GeTe and Ag- or Sb-substituted GeTe studied by low-temperature Te125 NMR

    DOE PAGES-Beta [OSTI]

    Cui, J.; Levin, E. M.; Lee, Y.; Furukawa, Y.

    2016-08-18

    We have carried out 125Te nuclear magnetic resonance (NMR) in a wide temperature range of 1.5–300 K to investigate the electronic properties of Ge50 Te50, Ag2 Ge48Te50 , and Sb2 Ge48 Te50 from a microscopic point of view. From the temperature dependence of the NMR shift (K) and nuclear spin lattice relaxation rate (1/T1), we found that two bands contribute to the physical properties of the materials. One band overlaps the Fermi level providing the metallic state where no strong electron correlations are revealed by Korringa analysis. The other band is separated from the Fermi level by an energy gapmore » of Eg/kB ~67 K, which gives rise to semiconductorlike properties. First-principles calculation reveals that the metallic band originates from the Ge vacancy while the semiconductorlike band is related to the fine structure of the density of states near the Fermi level. We find low-temperature Te125 NMR data for the materials studied here clearly show that Ag substitution increases hole concentration while Sb substitution decreases it.« less

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    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

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    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    ITEM NO. SUPPLIES/SERVICES QUANTITY UNIT UNIT PRICE AMOUNT NAME OF OFFEROR OR CONTRACTOR 2 37 CONTINUATION SHEET REFERENCE NO. OF DOCUMENT BEING CONTINUED PAGE OF Tsay Professional Services Inc. DE-EM0003298 (A) (B) (C) (D) (E) (F) Tax ID Number: 27-1801472 DUNS Number: 833158590 FOB: Destination Period of Performance: 12/22/2014 to 12/21/2019 00001 General Construction and Environmental Regulatory 15,000,000.00 Support to the Los Alamos National Laboratory (LANL) AUTHORIZED FOR LOCAL

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    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    DE-EM0003878 Sigma Science Inc. Page 5 of 85 SECTION A - SOLICITATION/CONTRACT FORM ............................................................................................. 1 SECTION B - SUPPLIES OR SERVICES AND PRICES/COSTS ......................................................................... 6 SECTION C - DESCRIPTIONS/SPECIFICATIONS/WORK STATEMENT ...................................................... 11 SECTION D - PACKAGING AND MARKING

  15. Diversity of Functionalized Germanium Zintl Clusters: Syntheses and Theoretical Studies of [Ge9PdPPh3]3- and [Ni@(Ge9PdPPh3)]2-

    SciTech Connect (OSTI)

    Sun, Zhong-Ming; Zhao, Ya-Fan; Li, Jun; Wang, Lai S.

    2009-09-10

    A new Zintl cluster [Ge9PdPPh3]3- has been isolated as (2,2,2-crypt)K+ salt through the reaction of K4Ge9 and Pd[PPh3]4 in ethylenediamine solutions and characterized via single-crystal X-ray crystallography. The as-prepared bimetallic [Ge9PdPPh3]3- cluster could successfully trap a nickel atom to form a trimetallic cluster [Ni@(Ge9PdPPh3)]2-. The coordination of Ge94- by PdPPh3 induces a one-electron oxidation and encapsulation of the Ni atom into the Ge93- cage leads to a further one-electron oxidation and a geometry transformation from C4v (nido) to C3v (closo).

  16. The First-cycle Electrochemical Lithiation of Crystalline Ge Dopant and Orientation Dependence, and Comparison with Si

    SciTech Connect (OSTI)

    Chan, Maria K.Y.; Long, Brandon R.; Gewirth, Andrew A.; Greeley, Jeffrey P.

    2011-12-15

    We use first principles Density Functional Theory (DFT), cyclic voltammetry (CV), and Raman spectroscopy to investigate the first-cycle electrochemical lithiation of Ge in comparison with Si both high-capacity anode materials for Li ion batteries. DFT shows a significant difference in the dilute solubility of Li in Si and Ge, despite similarities in their chemical and physical properties. We attribute this difference to electronic, as opposed to elastic, effects. CV and Raman data reveal little dopant dependence in the lithiation onset voltages in Ge, unlike in Si, due to a smaller energy difference between dilute Li insertion in p-type Ge and bulk germanide formation than the corresponding difference in Si. Finally, we show that there is no orientation dependence in lithiation onset voltages in Ge. We conclude that approaches other than microstructuring are needed to fabricate effective electrodes able to take advantage of the higher rate capability of Ge compared to that of Si.

  17. Electrical properties of diluted n- and p-Si{sub 1−x}Ge{sub x} at small x

    SciTech Connect (OSTI)

    Emtsev, V. V.; Abrosimov, N. V.; Kozlovskii, V. V.; Oganesyan, G. A.

    2014-12-15

    Hall effect and conductivity measurements are taken on Si{sub 1−x}Ge{sub x} of n- and p-type at x ≤ 0.05. Much attention is given to electrical measurements over a temperature interval of 25 to 40 K where the mobility of charged carriers is strongly affected by alloy scattering. The partial mobility of electrons and holes due to this scattering mechanism is estimated for n-Si{sub 1−x}Ge{sub x} and p-Si{sub 1−x}Ge{sub x} at small x. Together with this, an effect of the presence of Ge atoms upon the ionization energy of phosphorus and boron impurities is investigated. Some points related to an inhomogeneous distribution of Ge atoms in Si{sub 1−x}Ge{sub x} are discussed.

  18. GeP and (Ge{sub 1−x}Sn{sub x})(P{sub 1−y}Ge{sub y}) (x≈0.12, y≈0.05): Synthesis, structure, and properties of two-dimensional layered tetrel phosphides

    SciTech Connect (OSTI)

    Lee, Kathleen; Synnestvedt, Sarah; Bellard, Maverick; Kovnir, Kirill

    2015-04-15

    GeP and Sn-doped GeP were synthesized from elements in bismuth and tin flux, respectively. The layered crystal structures of these compounds were characterized by single crystal X-ray diffraction. Both phosphides crystallize in a GaTe structure type in the monoclinic space group C2/m (No. 12) with GeP: a=15.1948(7) Å, b=3.6337(2) Å, c=9.1941(4) Å, β=101.239(2)°; Ge{sub 0.93(3)}P{sub 0.95(1)}Sn{sub 0.12(3)}: a=15.284(9) Å, b=3.622(2) Å, c=9.207(5) Å, β=101.79(1)°. The crystal structure of GeP consists of 2-dimensional GeP layers held together by weak electron lone pair interactions between the phosphorus atoms that confine the layer. Each layer is built of Ge–Ge dumbbells surrounded by a distorted antiprism of phosphorus atoms. Sn-doped GeP has a similar structural motif, but with a significant degree of disorder emphasized by the splitting of all atomic positions. Resistivity measurements together with quantum-chemical calculations reveal semiconducting behavior for the investigated phosphides. - Graphical abstract: Layered phosphides GeP and Sn-doped GeP were synthesized from elements in bismuth and tin flux, respectively. The crystal structure of GeP consists of 2-dimensional GeP layers held together by weak electron lone pair interactions between the phosphorus atoms that confine the layer. Sn-doped GeP has a similar structural motif with a significant degree of disorder emphasized by the splitting of all atomic positions. Resistivity measurements together with quantum-chemical calculations reveal semiconducting behavior for the investigated phosphides. - Highlights: • GeP crystallizes in a layered crystal structure. • Doping of Sn into GeP causes large structural distortions. • GeP is narrow bandgap semiconductor. • Sn-doped GeP exhibits an order of magnitude higher resistivity due to disorder.

  19. Computer-Based Procedures For Field Workers Katya Le Blanc Idaho National Laboratory

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Computer-Based Procedures For Field Workers Katya Le Blanc Idaho National Laboratory Project Overview * DOE LWRS II&C: R&D to address long-term aging and modernization of current instrumentation and control technologies to provide an enhanced understanding of plant operating conditions and available margins and improved response strategies and capabilities for operational events. * CBP research: Take the industry from current procedure practices (paper) to utilizing advantages of

  20. Strain and composition profiles of self-assembled Ge/Si(001) islands

    SciTech Connect (OSTI)

    Alonso, M.I.; Calle, M. de la; Osso, J.O.; Garriga, M.; Goni, A.R.

    2005-08-01

    Epitaxial growth of Ge/Si(001) in the Stranski-Krastanow regime results in the formation of island ensembles with various sizes and morphologies. During formation there is generally a strain-driven Si diffusion into the Ge islands. We investigate this issue in an epilayer grown by molecular-beam epitaxy containing pyramids, domes, and superdomes. A series of samples obtained by wet chemical etching of the original layer for different times in diluted hydrogen peroxide was evaluated by atomic force microscopy, spectroscopic ellipsometry, and Raman scattering. The average island composition as etching proceeds becomes Si richer, changing from about Si{sub 0.2}Ge{sub 0.8} to Si{sub 0.35}Ge{sub 0.65}, whereas the lattice strain increases, in particular, the material at the island summits is essentially relaxed. The composition of the wetting layer is nearly Si{sub 0.45}Ge{sub 0.55}. The results also reveal relatively Si-rich nuclei of a uniform size of {approx_equal}100 nm for all domes and superdomes, in accordance with a dislocation-induced growth mechanism of superdomes.