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Sample records for l-lake sluice gate

  1. Sharav Sluices Ltd | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    Sharav Sluices Ltd Jump to: navigation, search Name: Sharav Sluices Ltd Place: Haifa, Israel Zip: 32000 Sector: Renewable Energy Product: Developed a technology to produce...

  2. L-Lake fish: L-Lake/Steel Creek Biological Monitoring Program, January 1986--December 1991

    SciTech Connect (OSTI)

    Sayers, R.E. Jr.; Mealing, H.G. III

    1992-04-01

    The L Lake Biological Monitoring Program was designed to meet environmental regulatory requirements associated with the re-start of L-Reactor and address portions of Section 316(a) of the Clean Water Act, which requires an applicant for a discharge permit to provide scientific evidence that the discharge causes no significant impact on the indigenous ecosystem. The Department of Energy (DOE) must demonstrate that the discharge of L-Reactor effluent into L Lake will not inhibit the eventual establishment of a ``Balanced Biological Community`` (BBC) in at least 50% of the lake.

  3. Steel Creek fish, L-Lake/Steel Creek Biological Monitoring Program, January 1986--December 1991

    SciTech Connect (OSTI)

    Sayers, R.E. Jr.; Mealing, H.G. III

    1992-04-01

    The Savannah River Site (SRS) encompasses 300 sq mi of the Atlantic Coastal plain in west-central South Carolina. The Savannah River forms the western boundary of the site. Five major tributaries of the Savannah River -- Upper Three Runs Creek, Four Mile Creek, Pen Branch, Steel Creek, and Lower Three Runs Creek -- drain the site. All but Upper Three Runs Creek receive, or in the past received, thermal effluents from nuclear production reactors. In 1985, L Lake, a 400-hectare cooling reservoir, was built on the upper reaches of Steel Creek to receive effluent from the restart of L-Reactor, and protect the lower reaches from thermal impacts. The lake has an average width of approximately 600 m and extends along the Steel Creek valley approximately 7000 m from the dam to the headwaters. Water level is maintained at a normal pool elevation of 58 m above mean sea level by overflow into a vertical intake tower that has multilevel discharge gates. The intake tower is connected to a horizontal conduit that passes through the dam and releases water into Steel Creek. The Steel Creek Biological Monitoring Program was designed to meet environmental regulatory requirements associated with the restart of L-Reactor and complements the Biological Monitoring Program for L Lake. This extensive program was implemented to address portions of Section 316(a) of the Clean Water Act. The Department of Energy (DOE) must demonstrate that the operation of L-Reactor will not significantly alter the established aquatic ecosystems.

  4. Phase 2 sampling for radionuclides and metal distribution in L-lake sediments. Final report

    SciTech Connect (OSTI)

    Koch, J.W. II

    1996-10-01

    Science Applications International Corporation (SAIC) was tasked by Westinghouse Savannah River Company under subcontract C001015P to provide environmental sampling services on L-Lake at the Savannah River site. Athena Technologies, Inc. was subcontracted by SAIC to provide vibracoring services. The project consisted of vibracore sampling of lake bottom sediments at 23 locations within L-Lake. Field activities were performed from August 8 through August 22, 1996. This report describes the activities associated with the task.

  5. Waste retrieval sluicing system data acquisition system acceptance test report

    SciTech Connect (OSTI)

    Bevins, R.R.

    1998-07-31

    This document describes the test procedure for the Project W-320 Tank C-106 Sluicing Data Acquisition System (W-320 DAS). The Software Test portion will test items identified in the WRSS DAS System Description (SD), HNF-2115. Traceability to HNF-2115 will be via a reference that follows in parenthesis, after the test section title. The Field Test portion will test sensor operability, analog to digital conversion, and alarm setpoints for field instrumentation. The W-320 DAS supplies data to assist thermal modeling of tanks 241-C-106 and 241-AY-102. It is designed to be a central repository for information from sources that would otherwise have to be read, recorded, and integrated manually. Thus, completion of the DAS requires communication with several different data collection devices and output to a usable PC data formats. This test procedure will demonstrate that the DAS functions as required by the project requirements stated in Section 3 of the W-320 DAS System Description, HNF-2115.

  6. Results of submerged sediment core sampling and analysis on Par Pond, Pond C, and L Lake: July 1995

    SciTech Connect (OSTI)

    Koch, J.W. II; Martin, F.D.; Friday, G.P.

    1996-06-01

    Sediment cores from shallow and deep water locations in Par Pond, Pond C, and L Lake were collected and analyzed in 1995 for radioactive and nonradioactive constituents. This core analysis was conducted to develop a defensible characterization of contaminants found in the sediments of Par Pond, Pond C, and L Lake. Mercury was the only nonradiological constituent with a nonestimated quantity that was detected above the U.S Environmental Protection Agency Region IV potential contaminants of concern screening criteria. It was detected at a depth of 0.3--0.6 meters (1.0--2.0 feet) at one location in L Lake. Cesium-137, promethium-146, plutonium-238, and zirconium-95 had significantly higher concentrations in Par Pond sediments than in sediments from the reference sites. Cobalt-60, cesium-137, plutonium-238, plutonium-239/240, and strontium-90 had significantly higher concentrations in L-Lake sediments than sediments from the reference sites.

  7. Tank 241-C-106 waste retrieval sluicing system process control plan

    SciTech Connect (OSTI)

    Carothers, K.G.

    1998-07-25

    Project W-320 has installed the Waste Retrieval Sluicing System at the 200 East Area on the Hanford Site to retrieve the sludge from single-shell tank 241-C-106 and transfer it into double-shell tank 241-AY-102. Operation of the WRSS process will resolve the high-heat safety issue for tank 241-C-106 and demonstrate a technology for the retrieval of single-shell tank wastes. This process control plan coordinates the technical operating requirements (primarily mass transfer, temperature, and flammable gas) for the sluicing operation and provides overall technical guidance for the retrieval activity.

  8. Gate Access

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    gate clearance will have been arranged for you by the User Office. Berkeley Lab employees and visiting researchers (participating guests) may arrange for gate clearance for ...

  9. Project management plan for project W-320, tank 241-C-106 sluicing

    SciTech Connect (OSTI)

    Leliefeld, K.W.

    1996-02-02

    This Project Management Plan establishes the organization, plans, and systems for management of Project W-320 as defined in DOE Order 4700.1, Project Management System (DOE 1987). The sluicing is for retrieving high-heat waste from single shell tank 241-C-106.

  10. CX-010121: Categorical Exclusion Determination

    Office of Energy Efficiency and Renewable Energy (EERE)

    685-G Par Pond and 686-G L-Lake Sluice Gate Conduit Cleanouts/Inspections CX(s) Applied: B1.3 Date: 03/21/2013 Location(s): South Carolina Offices(s): Savannah River Operations Office

  11. CX-011819: Categorical Exclusion Determination

    Office of Energy Efficiency and Renewable Energy (EERE)

    685-G PAR Pond and 686-G L-Lake Sluice Gate Conduit Cleanouts/Inspections CX(s) Applied: B1.3 Date: 01/27/2014 Location(s): South Carolina Offices(s): Savannah River Operations Office

  12. Review of Waste Retrieval Sluicing System Operations and Data for Tanks 241-C-106 and 241-AY-102

    SciTech Connect (OSTI)

    Cuta, Judith M.; Carothers, Kelly G.; Damschen, Dennis W.; Kuhn, William L.; Lechelt, Jeanne A.; Sathyanarayana, Kurabalakota; Stauffer, Leslie A.

    2000-09-26

    Sluicing operations were performed to retrieve high-heat sludge from single-shell tank 241-C-106 and transfer it to double-shell tank 241-AY-102 using the Waste Retrieval Sluicing System. This eliminated the high-heat safety issue for C-106 and demonstrated a technology for retrieval of single-shell tank waste. Both AY-102 and C-106 were monitored during the waste transfer operations, providing a clear picture of general trends in each tank. Specific issues addressed were evaluation of the data for evidence of flammable gas accumulation in AY-102 and thermal performance of AY-102 under the increasing heat load.

  13. CNEEC - Electrolyte Gating by David Goldhaber-Gordon

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Electrolyte Gating

  14. Quality control summary report for the RFI/RI assessment of the submerged sediment core samples taken at Par Pond, Pond C, and L-Lake

    SciTech Connect (OSTI)

    Koch, J. II

    1996-12-01

    This report presents a summary of the sediment characterization performed under the direction of the Westinghouse Savannah River Company`s (WSRC) Environmental Protection Department/Environmental Monitoring Section (EPD/EMS) in support of Par Pond, Pond C, and L- Lake. This characterization will be a screening study and will enable the Environmental Sciences Section (ESS) to develop a defensible contaminants of concern list for more extensive characterization of the Par Pond, Pond C, and L-Lake.

  15. Project W-320, 241-C-106 sluicing: Construction specification W-320-C7

    SciTech Connect (OSTI)

    Bailey, J.W.

    1998-07-20

    This supporting document has been prepared to make the construction specifications for Project W-320 readily available. Project W-320, Waste Retrieval Sluicing System (WRSS), specification is for procurement, fabrication and installation of equipment at the C Tank Farm, including Operator Station and some equipment just outside the C Tank Farm fence, necessary to support the sluicing operation. Work consists of furnishing labor, equipment, and materials to provide the means to procure materials and equipment, fabricate items, excavate and place concrete, and install equipment, piping, wiring, and structures in accordance with the Contract Documents. Major work elements include: Excavation for process and fire protection piping, electrical conduit trenches, and foundations for small structures; Placement of concrete cover blocks, foundations, and equipment pads; Procurement and installation of double walled piping, electrical conduit, fire and raw water piping, chilled water piping, and electrical cable; Procurement and installation of above-ground ventilation system piping between the (HVAC) Process building and Tank C-106; Core drill existing concrete; Furnish and installation of electrical distribution equipment; Installation of the concrete foundation, and assembly installation of the two Seismic Shutdown Systems with Environmental Enclosures; Fabrication and installation of in-pit pipe jumpers, including related valves, instruments and wiring; and Installation of a vertical submersible pump, horizontal booster pump, and winch assembly into tank access riser pits.

  16. Project W-320, 241-C-106 sluicing: Construction specification W-320-C1

    SciTech Connect (OSTI)

    Bailey, J.W.

    1998-07-20

    Project W-320, Waste Retrieval Sluicing System (WRSS), specification is for procurement, fabrication and installation of equipment at the C Tank Farm, including Operator Station and some equipment just outside the C Tank Farm fence, necessary to support the sluicing operation. Work consists of furnishing labor, equipment, and materials to provide the means to procure materials and equipment, fabricate items, excavate and place concrete, and install equipment, piping, wiring, and structures in accordance with the Contract Documents. Major work elements include: Excavation for process and fire protection piping, electrical conduit trenches, and foundations for small structures; Placement of concrete cover blocks, foundations, and equipment pads; Procurement and installation of double walled piping, electrical conduit, fire and raw water piping, chilled water piping, and electrical cable; Procurement and installation of above-ground ventilation system piping between the (HVAC) Process building and Tank C-106; Core drill existing concrete; Furnish and installation of electrical distribution equipment; Installation of the concrete foundation, and assembly installation of the two Seismic Shutdown Systems with Environmental Enclosures; Fabrication and installation of in-pit pipe jumpers, including related valves, instruments and wiring; and Installation of a vertical submersible pump, horizontal booster pump, and winch assembly into tank access riser pits.

  17. Project W-320, 241-C-106 sluicing: Construction specification W-320-C5

    SciTech Connect (OSTI)

    Bailey, J.W.

    1998-07-20

    This supporting document has been prepared to make the construction specifications for Project W-320 readily available. Project W-320, Waste Retrieval Sluicing System (WRSS), specification is for procurement, fabrication and installation of equipment at the C Tank Farm, including Operator Station and some equipment just outside the C Tank Farm fence, necessary to support the sluicing operation. Work consists of furnishing labor, equipment, and materials to provide the means to procure materials and equipment, fabricate items, excavate and place concrete, and install equipment, piping, wiring, and structures in accordance with the Contract Documents. Major work elements include: Excavation for process and fire protection piping, electrical conduit trenches, and foundations for small structures; Placement of concrete cover blocks, foundations, and equipment pads; Procurement and installation of double walled piping, electrical conduit, fire and raw water piping, chilled water piping, and electrical cable; Procurement and installation of above-ground ventilation system piping between the (HVAC) Process building and Tank C-106; Core drill existing concrete; Furnish and installation of electrical distribution equipment; Installation of the concrete foundation, and assembly installation of the two Seismic Shutdown Systems with Environmental Enclosures; Fabrication and installation of in-pit pipe jumpers, including related valves, instruments and wiring; and Installation of a vertical submersible pump, horizontal booster pump, and winch assembly into tank access riser pits.

  18. Project W-320, 241-C-106 sluicing: Construction specification W-320-C2

    SciTech Connect (OSTI)

    Bailey, J.W.

    1998-07-20

    This supporting document has been prepared to make the construction specifications for Project W-320 readily available. Project W-320, Waste Retrieval Sluicing System (WRSS), specification is for procurement, fabrication and installation of equipment at the C Tank Farm, including Operator Station and some equipment just outside the C Tank Farm fence, necessary to support the sluicing operation. Work consists of furnishing labor, equipment, and materials to provide the means to procure materials and equipment, fabricate items, excavate and place concrete, and install equipment, piping, wiring, and structures in accordance with the Contract Documents. Major work elements include: Excavation for process and fire protection piping, electrical conduit trenches, and foundations for small structures; Placement of concrete cover blocks, foundations, and equipment pads; Procurement and installation of double walled piping, electrical conduit, fire and raw water piping, chilled water piping, and electrical cable; Procurement and installation of above-ground ventilation system piping between the (HVAC) Process building and Tank C-106; Core drill existing concrete; Furnish and installation of electrical distribution equipment; Installation of the concrete foundation, and assembly installation of the two Seismic Shutdown Systems with Environmental Enclosures; Fabrication and installation of in-pit pipe jumpers, including related valves, instruments and wiring; and Installation of a vertical submersible pump, horizontal booster pump, and winch assembly into tank access riser pits.

  19. Project management plan for Project W-320, Tank 241-C-106 sluicing. Revision 2

    SciTech Connect (OSTI)

    Phillips, D.R.

    1994-07-01

    A major mission of the US Department of Energy (DOE) is the permanent disposal of Hanford Site defense wastes by utilizing safe, environmentally acceptable, and cost-effective disposal methods that meet applicable regulations. The Tank Waste Remediation System (TWRS) Program was established at the Hanford Site to manage and control activities specific to the remediation of safety watch list tanks, including high-heat-producing tanks, and for the ultimate characterization, retrieval, pretreatment, and disposal of the low- and high-level fractions of the tank waste. Project W-320, Tank 241-C-106 Sluicing, provides the methodology, equipment, utilities, and facilities necessary for retrieving the high-heat waste from single-shell tank (SST) 24-C-106. Project W-320 is a fiscal year (FY) 1993 expense-funded major project, and has a design life of 2 years. Retrieval of the waste in tank 241-C-106 will be accomplished through mobilization of the sludge into a pumpable slurry using past-practice sluicing. The waste is then transferred directly to a double-shell tank for interim storage, subsequent pretreatment, and eventual disposal. A detailed description of the management organization and responsibilities of all participants is presented in this document.

  20. Project W-320, 241-C-106 sluicing: Construction specification W-320-C6

    SciTech Connect (OSTI)

    Bailey, J.W.

    1998-07-20

    This supporting document has been prepared to make the construction specifications for Project W-320 readily available. Project W-320, Waste Retrieval Sluicing System (WRSS), specification is for procurement, fabrication and installation of equipment at the C Tank Farm, including Operator Station and some equipment just outside the C Tank Farm fence, necessary to support the sluicing operation. Work consists of furnishing labor, equipment, and materials to provide the means to procure materials and equipment, fabricate items, excavate and place concrete, and install equipment, piping, wiring, and structures in accordance with the Contract Documents. Major work elements include: Excavation for process and fire protection piping, electrical conduit trenches, and foundations for small structures; Placement of concrete cover blocks, foundations, and equipment pads; Procurement and installation of double walled piping, electrical conduit, fire and raw water piping, chilled water piping, and electrical cable; Procurement and installation of above-ground ventilation system piping between the (HVAC) Process building and Tank C-106; Core drill existing concrete; Furnish and installation of electrical distribution equipment; Installation of the concrete foundation, and assembly installation of the two Seismic Shutdown Systems with Environmental Enclosures; Fabrication and installation of in-pit pipe jumpers, including related valves, instruments and wiring; and Installation of a vertical submersible pump, horizontal booster pump, and winch assembly into tank access riser pits.

  1. Stage Gate Management Guide

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Stage Gate Management in the Biomass Program February 2005 Revision 2 2 TABLE OF CONTENTS OVERVIEW............................................................................................................................. 4 STAGE GATE MANAGEMENT .................................................................................................... 4 STAGE GATE PROCESS AND LONG RANGE STRATEGIC PROGRAM PLANNING ........................ 5 GATE REVIEWS

  2. Safety evaluation for packaging transportation of equipment for tank 241-C-106 waste sluicing system

    SciTech Connect (OSTI)

    Calmus, D.B.

    1994-08-25

    A Waste Sluicing System (WSS) is scheduled for installation in nd waste storage tank 241-C-106 (106-C). The WSS will transfer high rating sludge from single shell tank 106-C to double shell waste tank 241-AY-102 (102-AY). Prior to installation of the WSS, a heel pump and a transfer pump will be removed from tank 106-C and an agitator pump will be removed from tank 102-AY. Special flexible receivers will be used to contain the pumps during removal from the tanks. After equipment removal, the flexible receivers will be placed in separate containers (packagings). The packaging and contents (packages) will be transferred from the Tank Farms to the Central Waste Complex (CWC) for interim storage and then to T Plant for evaluation and processing for final disposition. Two sizes of packagings will be provided for transferring the equipment from the Tank Farms to the interim storage facility. The packagings will be designated as the WSSP-1 and WSSP-2 packagings throughout the remainder of this Safety Evaluation for Packaging (SEP). The WSSP-1 packagings will transport the heel and transfer pumps from 106-C and the WSSP-2 packaging will transport the agitator pump from 102-AY. The WSSP-1 and WSSP-2 packagings are similar except for the length.

  3. Imaging through obscurations for sluicing operations in the waste storage tanks

    SciTech Connect (OSTI)

    Peters, T.J.; McMakin, D.L.; Sheen, D.M.; Chieda, M.A.

    1994-08-01

    Waste remediators have identified that surveillance of waste remediation operations and periodic inspections of stored waste are required under very demanding and difficult viewing environments. In many cases, obscurants such as dust or water vapor are generated as part of the remediation activity. Methods are required for viewing or imaging beyond the normal visual spectrum. Work space images guide the movement of remediation equipment, creating a need for rapidly updated, near real-time imaging capability. In addition, there is a need for three-dimensional topographical data to determine the contours of the wastes, to plan retrieval campaigns, and to provide a three-dimensional map of a robot`s work space as basis for collision avoidance. Three basic imaging techniques were evaluated: optical, acoustic and radar. The optical imaging methods that were examined used cameras which operated in the visible region and near-infrared region and infrared cameras which operated in the 3--5 micron and 8--12 micron wavelength regions. Various passive and active lighting schemes were tested, as well as the use of filters to eliminate reflection in the visible region. Image enhancement software was used to extend the range where visual techniques could be used. In addition, the operation of a laser range finder, which operated at 0.835 microns, was tested when fog/water droplets were suspended in the air. The acoustic technique involved using commercial acoustic sensors, operating at approximately 50 kHz and 215 kHz, to determine the attenuation of the acoustic beam in a high-humidity environment. The radar imaging methods involved performing millimeter wave (94 GHz) attenuation measurement sin the various simulated sluicing environments and performing preliminary experimental imaging studies using a W-Band (75--110 GHz) linearly scanned transceiver in a laboratory environment. The results of the tests are discussed.

  4. Gated strip proportional detector

    DOE Patents [OSTI]

    Morris, Christopher L.; Idzorek, George C.; Atencio, Leroy G.

    1987-01-01

    A gated strip proportional detector includes a gas tight chamber which encloses a solid ground plane, a wire anode plane, a wire gating plane, and a multiconductor cathode plane. The anode plane amplifies the amount of charge deposited in the chamber by a factor of up to 10.sup.6. The gating plane allows only charge within a narrow strip to reach the cathode. The cathode plane collects the charge allowed to pass through the gating plane on a set of conductors perpendicular to the open-gated region. By scanning the open-gated region across the chamber and reading out the charge collected on the cathode conductors after a suitable integration time for each location of the gate, a two-dimensional image of the intensity of the ionizing radiation incident on the detector can be made.

  5. Gated strip proportional detector

    DOE Patents [OSTI]

    Morris, C.L.; Idzorek, G.C.; Atencio, L.G.

    1985-02-19

    A gated strip proportional detector includes a gas tight chamber which encloses a solid ground plane, a wire anode plane, a wire gating plane, and a multiconductor cathode plane. The anode plane amplifies the amount of charge deposited in the chamber by a factor of up to 10/sup 6/. The gating plane allows only charge within a narrow strip to reach the cathode. The cathode plane collects the charge allowed to pass through the gating plane on a set of conductors perpendicular to the open-gated region. By scanning the open-gated region across the chamber and reading out the charge collected on the cathode conductors after a suitable integration time for each location of the gate, a two-dimensional image of the intensity of the ionizing radiation incident on the detector can be made.

  6. Environmental assessment for the natural fluctuation of water level in Par Pond and reduced water flow in Steel Creek below L-Lake at the Savannah River Site

    SciTech Connect (OSTI)

    1995-08-01

    The Savannah River Operations Office Strategic Plan directs Savannah River Site (SRS) to find ways to reduce operating costs, and to determine what site infrastructure must be maintained and what infrastructure is surplus. Because of the mission change, L-Lake, Par Pond, and the river water system are no longer needed to support current missions and therefore provide an opportunity for operating cost reduction. If SRS determines that L-Lake, Par Pond, and the river water system are no longer needed to support future missions and are considered surplus, appropriate NEPA documentation will be prepared. The purpose of the proposed action in this Environmental Assessment is to begin an examination of the need for the Site`s river water system by (1) developing data needed to evaluate the potential environmental impacts of further reducing or eliminating the flow demands from the Site`s river water system and; (2) evaluating the potential of reducing operating costs by allowing the water level in Par Pond to fluctuate naturally through reduced pumping. This action also includes reducing the current flow rates from L-Lake to Steel Creek to natural stream flows while maintaining full pool. The recently approved Par Pond CERCLA Interim Action Proposed Plan (IAPP) committed to evaluate in a NEPA document the environmental consequences of this proposed action. This document evaluated the remediation of human health and ecological risks associated with the three year drawdown of Par Pond. Should any of the parameters sampled in the reservoir and streams (e.g., water quality, biota, etc.) exceed established threshold levels during the implementation of the proposed action, water would again be pumped into the reservoir to minimize any impacts by bringing the water level back to an appropriate level about 58.2 m (195 ft).

  7. Range gated imaging experiments using gated intensifiers

    SciTech Connect (OSTI)

    McDonald, T.E. Jr.; Yates, G.J.; Cverna, F.H.; Gallegos, R.A.; Jaramillo, S.A.; Numkena, D.M.; Payton, J.; Pena-Abeyta, C.R.

    1999-03-01

    A variety of range gated imaging experiments using high-speed gated/shuttered proximity focused microchannel plate image intensifiers (MCPII) are reported. Range gated imaging experiments were conducted in water for detection of submerged mines in controlled turbidity tank test and in sea water for the Naval Coastal Sea Command/US Marine Corps. Field experiments have been conducted consisting of kilometer range imaging of resolution targets and military vehicles in atmosphere at Eglin Air Force Base for the US Air Force, and similar imaging experiments, but in smoke environment, at Redstone Arsenal for the US Army Aviation and Missile Command (AMCOM). Wavelength of the illuminating laser was 532 nm with pulse width ranging from 6 to 12 ns and comparable gate widths. These tests have shown depth resolution in the tens of centimeters range from time phasing reflected LADAR images with MCPII shutter opening.

  8. Sliding-gate valve

    DOE Patents [OSTI]

    Usnick, George B.; Ward, Gene T.; Blair, Henry O.; Roberts, James W.; Warner, Terry N.

    1979-01-01

    This invention is a novel valve of the slidable-gate type. The valve is designed especially for long-term use with highly abrasive slurries. The sealing surfaces of the gate are shielded by the valve seats when the valve is fully open or closed, and the gate-to-seat clearance is swept with an inflowing purge gas while the gate is in transit. A preferred form of the valve includes an annular valve body containing an annular seat assembly defining a flow channel. The seat assembly comprises a first seat ring which is slidably and sealably mounted in the body, and a second seat ring which is tightly fitted in the body. These rings cooperatively define an annular gap which, together with passages in the valve body, forms a guideway extending normal to the channel. A plate-type gate is mounted for reciprocation in the guideway between positions where a portion of the plate closes the channel and where a circular aperture in the gate is in register with the channel. The valve casing includes opposed chambers which extend outwardly from the body along the axis of the guideway to accommodate the end portions of the gate. The chambers are sealed from atmosphere; when the gate is in transit, purge gas is admitted to the chambers and flows inwardly through the gate-to-seat-ring, clearance, minimizing buildup of process solids therein. A shaft reciprocated by an external actuator extends into one of the sealed chambers through a shaft seal and is coupled to an end of the gate. Means are provided for adjusting the clearance between the first seat ring and the gate while the valve is in service.

  9. Adiabatically implementing quantum gates

    SciTech Connect (OSTI)

    Sun, Jie; Lu, Songfeng Liu, Fang

    2014-06-14

    We show that, through the approach of quantum adiabatic evolution, all of the usual quantum gates can be implemented efficiently, yielding running time of order O(1). This may be considered as a useful alternative to the standard quantum computing approach, which involves quantum gates transforming quantum states during the computing process.

  10. Optical NAND gate

    DOE Patents [OSTI]

    Skogen, Erik J.; Raring, James; Tauke-Pedretti, Anna

    2011-08-09

    An optical NAND gate is formed from two pair of optical waveguide devices on a substrate, with each pair of the optical waveguide devices consisting of an electroabsorption modulator and a photodetector. One pair of the optical waveguide devices is electrically connected in parallel to operate as an optical AND gate; and the other pair of the optical waveguide devices is connected in series to operate as an optical NOT gate (i.e. an optical inverter). The optical NAND gate utilizes two digital optical inputs and a continuous light input to provide a NAND function output. The optical NAND gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.

  11. Optical XOR gate

    DOE Patents [OSTI]

    Vawter, G. Allen

    2013-11-12

    An optical XOR gate is formed as a photonic integrated circuit (PIC) from two sets of optical waveguide devices on a substrate, with each set of the optical waveguide devices including an electroabsorption modulator electrically connected in series with a waveguide photodetector. The optical XOR gate utilizes two digital optical inputs to generate an XOR function digital optical output. The optical XOR gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.

  12. Optical NOR gate

    DOE Patents [OSTI]

    Skogen, Erik J.; Tauke-Pedretti, Anna

    2011-09-06

    An optical NOR gate is formed from two pair of optical waveguide devices on a substrate, with each pair of the optical waveguide devices consisting of an electroabsorption modulator electrically connected in series with a waveguide photodetector. The optical NOR gate utilizes two digital optical inputs and a continuous light input to provide a NOR function digital optical output. The optical NOR gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.

  13. Advanced insulated gate bipolar transistor gate drive

    DOE Patents [OSTI]

    Short, James Evans; West, Shawn Michael; Fabean, Robert J.

    2009-08-04

    A gate drive for an insulated gate bipolar transistor (IGBT) includes a control and protection module coupled to a collector terminal of the IGBT, an optical communications module coupled to the control and protection module, a power supply module coupled to the control and protection module and an output power stage module with inputs coupled to the power supply module and the control and protection module, and outputs coupled to a gate terminal and an emitter terminal of the IGBT. The optical communications module is configured to send control signals to the control and protection module. The power supply module is configured to distribute inputted power to the control and protection module. The control and protection module outputs on/off, soft turn-off and/or soft turn-on signals to the output power stage module, which, in turn, supplies a current based on the signal(s) from the control and protection module for charging or discharging an input capacitance of the IGBT.

  14. Compact gate valve

    DOE Patents [OSTI]

    Bobo, Gerald E.

    1977-01-01

    This invention relates to a double-disc gate valve which is compact, comparatively simple to construct, and capable of maintaining high closing pressures on the valve discs with low frictional forces. The valve casing includes axially aligned ports. Mounted in the casing is a sealed chamber which is pivotable transversely of the axis of the ports. The chamber contains the levers for moving the valve discs axially, and an actuator for the levers. When an external drive means pivots the chamber to a position where the discs are between the ports and axially aligned therewith, the actuator for the levers is energized to move the discs into sealing engagement with the ports.

  15. ONE SHAKE GATE FORMER

    DOE Patents [OSTI]

    Kalibjian, R.; Perez-Mendez, V.

    1957-08-20

    An improved circuit for forming square pulses having substantially short and precise durations is described. The gate forming circuit incorporates a secondary emission R. F. pentode adapted to receive input trigger pulses amd having a positive feedback loop comnected from the dynode to the control grid to maintain conduction in response to trigger pulses. A short circuited pulse delay line is employed to precisely control the conducting time of the tube and a circuit for squelching spurious oscillations is provided in the feedback loop.

  16. Penn State DOE GATE Program

    SciTech Connect (OSTI)

    Anstrom, Joel

    2012-08-31

    The Graduate Automotive Technology Education (GATE) Program at The Pennsylvania State University (Penn State) was established in October 1998 pursuant to an award from the U.S. Department of Energy (U.S. DOE). The focus area of the Penn State GATE Program is advanced energy storage systems for electric and hybrid vehicles.

  17. Gate Solar | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    Spain Sector: Solar Product: JV set up for the promotion, exploitation and sale of photovoltaic solar power plants. References: Gate Solar1 This article is a stub. You can help...

  18. Latest design of gate valves

    SciTech Connect (OSTI)

    Kurzhofer, U.; Stolte, J.; Weyand, M.

    1996-12-01

    Babcock Sempell, one of the most important valve manufacturers in Europe, has delivered valves for the nuclear power industry since the beginning of the peaceful application of nuclear power in the 1960s. The latest innovation by Babcock Sempell is a gate valve that meets all recent technical requirements of the nuclear power technology. At the moment in the United States, Germany, Sweden, and many other countries, motor-operated gate and globe valves are judged very critically. Besides the absolute control of the so-called {open_quotes}trip failure,{close_quotes} the integrity of all valve parts submitted to operational forces must be maintained. In case of failure of the limit and torque switches, all valve designs have been tested with respect to the quality of guidance of the gate. The guidances (i.e., guides) shall avoid a tilting of the gate during the closing procedure. The gate valve newly designed by Babcock Sempell fulfills all these characteristic criteria. In addition, the valve has cobalt-free seat hardfacing, the suitability of which has been proven by friction tests as well as full-scale blowdown tests at the GAP of Siemens in Karlstein, West Germany. Babcock Sempell was to deliver more than 30 gate valves of this type for 5 Swedish nuclear power stations by autumn 1995. In the presentation, the author will report on the testing performed, qualifications, and sizing criteria which led to the new technical design.

  19. Gate Hours & Services | Stanford Synchrotron Radiation Lightsource

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Gate Hours & Services Sand Hill Road Main Gate Open 24 hours a day, 7 days a week ... SLAC has proximity card readers at the entrances from Sand Hill Road and Alpine Road as ...

  20. Stage-Gate Innovation Management Guidelines

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Stage-Gate Innovation Management Guidelines Managing risk through structured project decision-making February 2007 Version 1.3 Table of Contents Overview of ITP Stage-Gate Innovation Management........................................................ 1 Background............................................................................................................................................. 1 Process

  1. Radial gate evaluation: Olympus Dam, Colorado

    SciTech Connect (OSTI)

    1997-06-01

    The report presents a structural analysis of the radial gates of Olympus Dam in eastern Colorado. Five 20-foot wide by 17-foot high radial gates are used to control flow through the spillway at Olympus Dam. The spillway gates were designed in 1947. The gate arm assemblies consist of two separate wide flange beams, with a single brace between the arms. The arms pivot about a 4.0-inch diameter pin and bronze graphite-insert bushing. The pin is cantilevered from the pier anchor girder. The radial gates are supported by a pin bearing on a pier anchor birder bolted to the end of the concrete pier. The gates are operated by two-part wire rope 15,000-pound capacity hoise. Stoplog slots upstream of the radial gates are provided in the concrete piers. Selected drawings of the gates and hoists are located in appendix A.

  2. Graduate Automotive Technology Education (GATE) Initiative Awards |

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Department of Energy Graduate Automotive Technology Education (GATE) Initiative Awards Graduate Automotive Technology Education (GATE) Initiative Awards September 8, 2011 - 11:46am Addthis Graduate Automotive Technology Education (GATE) Initiative Awards DOE's Graduate Automotive Technology Education (GATE) initiative will award $6.4 million over the course of five years to support seven Centers of Excellence at American colleges, universities, and university-affiliated research

  3. Dynamic gating window for compensation of baseline shift in respiratory-gated radiation therapy

    SciTech Connect (OSTI)

    Pepin, Eric W.; Wu Huanmei; Shirato, Hiroki

    2011-04-15

    Purpose: To analyze and evaluate the necessity and use of dynamic gating techniques for compensation of baseline shift during respiratory-gated radiation therapy of lung tumors. Methods: Motion tracking data from 30 lung tumors over 592 treatment fractions were analyzed for baseline shift. The finite state model (FSM) was used to identify the end-of-exhale (EOE) breathing phase throughout each treatment fraction. Using duty cycle as an evaluation metric, several methods of end-of-exhale dynamic gating were compared: An a posteriori ideal gating window, a predictive trend-line-based gating window, and a predictive weighted point-based gating window. These methods were evaluated for each of several gating window types: Superior/inferior (SI) gating, anterior/posterior beam, lateral beam, and 3D gating. Results: In the absence of dynamic gating techniques, SI gating gave a 39.6% duty cycle. The ideal SI gating window yielded a 41.5% duty cycle. The weight-based method of dynamic SI gating yielded a duty cycle of 36.2%. The trend-line-based method yielded a duty cycle of 34.0%. Conclusions: Dynamic gating was not broadly beneficial due to a breakdown of the FSM's ability to identify the EOE phase. When the EOE phase was well defined, dynamic gating showed an improvement over static-window gating.

  4. Double-disc gate valve

    DOE Patents [OSTI]

    Wheatley, Seth J.

    1979-01-01

    This invention relates to an improvement in a conventional double-disc gate valve having a vertically movable gate assembly including a wedge, spreaders slidably engaged therewtih, a valve disc carried by the spreaders. When the gate assembly is lowered to a selected point in the valve casing, the valve discs are moved transversely outward to close inlet and outlet ports in the casing. The valve includes hold-down means for guiding the disc-and-spreader assemblies as they are moved transversely outward and inward. If such valves are operated at relatively high differential pressures, they sometimes jam during opening. Such jamming has been a problem for many years in gate valves used in gaseous diffusion plants for the separtion of uranium isotopes. The invention is based on the finding that the above-mentioned jamming results when the outlet disc tilts about its horizontal axis in a certain way during opening of the valve. In accordance with the invention, tilting of the outlet disc is maintained at a tolerable value by providing the disc with a rigid downwardly extending member and by providing the casing with a stop for limiting inward arcuate movement of the member to a preselected value during opening of the valve.

  5. Gating of the proton-gated ion channel from Gloeobacter violaceus...

    Office of Scientific and Technical Information (OSTI)

    Title: Gating of the proton-gated ion channel from Gloeobacter violaceus at pH 4 as revealed by X-ray crystallography Authors: Gonzalez-Gutierrez, Giovanni ; Cuello, Luis G. ; ...

  6. Bid Decision Gate Reviews | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Bid Decision Gate Reviews Bid Decision Gate Reviews Presented at the 15th Annual DOE Small Business Forum & Expo by: Tan Wilson, PMP, President of Entellect, LLC Bid Decision Gate Reviews (5.88 MB) More Documents & Publications Proposal Preparedness Revised OMB Circular A-76 (Revised November 14, 2002) Marketing to Win: How to Identify the Real Decision-maker and Tailor Your Message

  7. Optimization efforts in gated x-ray intensifiers (Conference...

    Office of Scientific and Technical Information (OSTI)

    Optimization efforts in gated x-ray intensifiers Citation Details In-Document Search Title: Optimization efforts in gated x-ray intensifiers Gated x-ray intensifiers are often ...

  8. Transparently wrap-gated semiconductor nanowire arrays for studies of gate-controlled photoluminescence

    SciTech Connect (OSTI)

    Nylund, Gustav; Storm, Kristian; Torstensson, Henrik; Wallentin, Jesper; Borgstrm, Magnus T.; Hessman, Dan; Samuelson, Lars

    2013-12-04

    We present a technique to measure gate-controlled photoluminescence (PL) on arrays of semiconductor nanowire (NW) capacitors using a transparent film of Indium-Tin-Oxide (ITO) wrapping around the nanowires as the gate electrode. By tuning the wrap-gate voltage, it is possible to increase the PL peak intensity of an array of undoped InP NWs by more than an order of magnitude. The fine structure of the PL spectrum reveals three subpeaks whose relative peak intensities change with gate voltage. We interpret this as gate-controlled state-filling of luminescing quantum dot segments formed by zincblende stacking faults in the mainly wurtzite NW crystal structure.

  9. Retaining latch for a water pit gate

    DOE Patents [OSTI]

    Beale, Arden R. (Idaho Falls, ID)

    1997-01-01

    A retaining latch for use in a hazardous materials storage or handling facility to adjustably retain a water pit gate in a gate frame. A retaining latch is provided comprising a latch plate which is rotatably mounted to each end of the top of the gate and a recessed opening, formed in the gate frame, for engaging an edge of the latch plate. The latch plate is circular in profile with one side cut away or flat, such that the latch plate is D-shaped. The remaining circular edge of the latch plate comprises steps of successively reduced thickness. The stepped edge of the latch plate fits inside a recessed opening formed in the gate frame. As the latch plate is rotated, alternate steps of the latch plate are engaged by the recessed opening. When the latch plate is rotated such that the flat portion of the latch plate faces the recessed opening in the gate frame, there is no connection between the opening and the latch plate and the gate is unlatched from the gate frame.

  10. Retaining latch for a water pit gate

    DOE Patents [OSTI]

    Beale, A.R.

    1997-11-18

    A retaining latch is described for use in a hazardous materials storage or handling facility to adjustably retain a water pit gate in a gate frame. A retaining latch is provided comprising a latch plate which is rotatably mounted to each end of the top of the gate and a recessed opening, formed in the gate frame, for engaging an edge of the latch plate. The latch plate is circular in profile with one side cut away or flat, such that the latch plate is D-shaped. The remaining circular edge of the latch plate comprises steps of successively reduced thickness. The stepped edge of the latch plate fits inside a recessed opening formed in the gate frame. As the latch plate is rotated, alternate steps of the latch plate are engaged by the recessed opening. When the latch plate is rotated such that the flat portion of the latch plate faces the recessed opening in the gate frame, there is no connection between the opening and the latch plate and the gate is unlatched from the gate frame. 4 figs.

  11. Automatically closing swing gate closure assembly

    DOE Patents [OSTI]

    Chang, Shih-Chih; Schuck, William J.; Gilmore, Richard F.

    1988-01-01

    A swing gate closure assembly for nuclear reactor tipoff assembly wherein the swing gate is cammed open by a fuel element or spacer but is reliably closed at a desired closing rate primarily by hydraulic forces in the absence of a fuel charge.

  12. Repeat-until-success cubic phase gate for universal continuous...

    Office of Scientific and Technical Information (OSTI)

    phase gate for universal continuous-variable quantum computation Citation Details In-Document Search Title: Repeat-until-success cubic phase gate for universal ...

  13. University of Illinois at Urbana-Champaign's GATE Center for...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Champaign's GATE Center for Advanced Automotive Bio-Fuel Combustion Engines University of Illinois at Urbana-Champaign's GATE Center for Advanced Automotive Bio-Fuel Combustion ...

  14. PENN STATE DOE GRADUATE AUTOMOTIVE TECHNOLOGY EDUCATION (GATE...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    PENN STATE DOE GRADUATE AUTOMOTIVE TECHNOLOGY EDUCATION (GATE) PROGRAM FOR PENN STATE DOE GRADUATE AUTOMOTIVE TECHNOLOGY EDUCATION (GATE) PROGRAM FOR 2009 DOE Hydrogen Program and ...

  15. Unbalanced edge modes and topological phase transition in gated...

    Office of Scientific and Technical Information (OSTI)

    Unbalanced edge modes and topological phase transition in gated trilayer graphene Title: Unbalanced edge modes and topological phase transition in gated trilayer graphene Authors: ...

  16. Development of Dual-Gated Bilayer Graphene Device Structures...

    Office of Scientific and Technical Information (OSTI)

    Development of Dual-Gated Bilayer Graphene Device Structures. Citation Details In-Document Search Title: Development of Dual-Gated Bilayer Graphene Device Structures. Abstract not ...

  17. AgraGate Carbon Credits Corporation | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    AgraGate Carbon Credits Corporation Jump to: navigation, search Name: AgraGate Carbon Credits Corporation Place: Des Moines, Iowa Zip: 50266 Product: Offset aggregators that work...

  18. Method for voltage-gated protein fractionation (Patent) | DOEPatents

    Office of Scientific and Technical Information (OSTI)

    Method for voltage-gated protein fractionation Title: Method for voltage-gated protein fractionation We report unique findings on the voltage dependence of protein exclusion from ...

  19. GATE Center of Excellence in Sustainable Vehicle Systems | Department...

    Energy.gov (indexed) [DOE]

    More Documents & Publications GATE Center of Excellence in Sustainable Vehicle Systems Vehicle Technologies Office Merit Review 2015: GATE Center of Excellence in Sustainable ...

  20. GATE: Energy Efficient Vehicles for Sustainable Mobility | Department...

    Energy.gov (indexed) [DOE]

    GATE: Energy Efficient Vehicles for Sustainable Mobility Vehicle Technologies Office Merit Review 2014: GATE: Energy Efficient Vehicles for Sustainable Mobility Vehicle ...

  1. Gate-tunable exchange coupling between cobalt clusters on graphene...

    Office of Scientific and Technical Information (OSTI)

    DOE PAGES Search Results Publisher's Accepted Manuscript: Gate-tunable exchange coupling between cobalt clusters on graphene Title: Gate-tunable exchange coupling between cobalt ...

  2. Locking apparatus for gate valves

    DOE Patents [OSTI]

    Fabyan, Joseph; Williams, Carl W.

    1988-01-01

    A locking apparatus for fluid operated valves having a piston connected to the valve actuator which moves in response to applied pressure within a cylinder housing having a cylinder head, a catch block is secured to the piston, and the cylinder head incorporates a catch pin. Pressure applied to the cylinder to open the valve moves the piston adjacent to the cylinder head where the catch pin automatically engages the catch block preventing futher movement of the piston or premature closure of the valve. Application of pressure to the cylinder to close the valve, retracts the catch pin, allowing the valve to close. Included are one or more selector valves, for selecting pressure application to other apparatus depending on the gate valve position, open or closed, protecting such apparatus from damage due to premature closing caused by pressure loss or operational error.

  3. Locking apparatus for gate valves

    DOE Patents [OSTI]

    Fabyan, J.; Williams, C.W.

    A locking apparatus for fluid operated valves having a piston connected to the valve actuator which moves in response to applied pressure within a cylinder housing having a cylinder head, a catch block is secured to the piston, and the cylinder head incorporates a catch pin. Pressure applied to the cylinder to open the valve moves the piston adjacent to the cylinder head where the catch pin automatically engages the catch block preventing further movement of the piston or premature closure of the valve. Application of pressure to the cylinder to close the valve, retracts the catch pin, allowing the valve to close. Included are one or more selector valves, for selecting pressure application to other apparatus depending on the gate valve position, open or closed, protecting such apparatus from damage due to premature closing caused by pressure loss or operational error.

  4. Graduate Automotive Technology Education (GATE) Center

    SciTech Connect (OSTI)

    Jeffrey Hodgson; David Irick

    2005-09-30

    The Graduate Automotive Technology Education (GATE) Center at the University of Tennessee, Knoxville has completed its sixth year of operation. During this period the Center has involved thirteen GATE Fellows and ten GATE Research Assistants in preparing them to contribute to advanced automotive technologies in the center's focus area: hybrid drive trains and control systems. Eighteen GATE students have graduated, and three have completed their course work requirements. Nine faculty members from three departments in the College of Engineering have been involved in the GATE Center. In addition to the impact that the Center has had on the students and faculty involved, the presence of the center has led to the acquisition of resources that probably would not have been obtained if the GATE Center had not existed. Significant industry interaction such as internships, equipment donations, and support for GATE students has been realized. The value of the total resources brought to the university (including related research contracts) exceeds $4,000,000. Problem areas are discussed in the hope that future activities may benefit from the operation of the current program.

  5. Digital gate pulse generator for cycloconverter control

    DOE Patents [OSTI]

    Klein, Frederick F.; Mutone, Gioacchino A.

    1989-01-01

    The present invention provides a digital gate pulse generator which controls the output of a cycloconverter used for electrical power conversion applications by determining the timing and delivery of the firing pulses to the switching devices in the cycloconverter. Previous gate pulse generators have been built with largely analog or discrete digital circuitry which require many precision components and periodic adjustment. The gate pulse generator of the present invention utilizes digital techniques and a predetermined series of values to develop the necessary timing signals for firing the switching device. Each timing signal is compared with a reference signal to determine the exact firing time. The present invention is significantly more compact than previous gate pulse generators, responds quickly to changes in the output demand and requires only one precision component and no adjustments.

  6. Gates, Oregon: Energy Resources | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    is a stub. You can help OpenEI by expanding it. Gates is a city in Linn County and Marion County, Oregon. It falls under Oregon's 4th congressional district and Oregon's 5th...

  7. GaTe semiconductor for radiation detection

    DOE Patents [OSTI]

    Payne, Stephen A.; Burger, Arnold; Mandal, Krishna C.

    2009-06-23

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  8. Gate fidelity fluctuations and quantum process invariants

    SciTech Connect (OSTI)

    Magesan, Easwar; Emerson, Joseph [Institute for Quantum Computing and Department of Applied Mathematics, University of Waterloo, Waterloo, Ontario N2L 3G1 (Canada); Blume-Kohout, Robin [Theoretical Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

    2011-07-15

    We characterize the quantum gate fidelity in a state-independent manner by giving an explicit expression for its variance. The method we provide can be extended to calculate all higher order moments of the gate fidelity. Using these results, we obtain a simple expression for the variance of a single-qubit system and deduce the asymptotic behavior for large-dimensional quantum systems. Applications of these results to quantum chaos and randomized benchmarking are discussed.

  9. David A Gates | Princeton Plasma Physics Lab

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    A Gates Principal Research Physicist, Stellarator Physics Division Head, Advanced Projects Department David Gates is a principal research physicist for the advanced projects division of PPPL, and the stellarator physics leader at the Laboratory. In the latter capacity he leads collaborative efforts with the Wendelstein 7-X and Large Helical Device stellarator projects in Germany and Japan, respectively. Interests Stellarators Tokamaks Contact Information Phone: 609-243-2837 Email:

  10. Range gated strip proximity sensor

    DOE Patents [OSTI]

    McEwan, T.E.

    1996-12-03

    A range gated strip proximity sensor uses one set of sensor electronics and a distributed antenna or strip which extends along the perimeter to be sensed. A micro-power RF transmitter is coupled to the first end of the strip and transmits a sequence of RF pulses on the strip to produce a sensor field along the strip. A receiver is coupled to the second end of the strip, and generates a field reference signal in response to the sequence of pulse on the line combined with received electromagnetic energy from reflections in the field. The sensor signals comprise pulses of radio frequency signals having a duration of less than 10 nanoseconds, and a pulse repetition rate on the order of 1 to 10 MegaHertz or less. The duration of the radio frequency pulses is adjusted to control the range of the sensor. An RF detector feeds a filter capacitor in response to received pulses on the strip line to produce a field reference signal representing the average amplitude of the received pulses. When a received pulse is mixed with a received echo, the mixing causes a fluctuation in the amplitude of the field reference signal, providing a range-limited Doppler type signature of a field disturbance. 6 figs.

  11. Range gated strip proximity sensor

    DOE Patents [OSTI]

    McEwan, Thomas E.

    1996-01-01

    A range gated strip proximity sensor uses one set of sensor electronics and a distributed antenna or strip which extends along the perimeter to be sensed. A micro-power RF transmitter is coupled to the first end of the strip and transmits a sequence of RF pulses on the strip to produce a sensor field along the strip. A receiver is coupled to the second end of the strip, and generates a field reference signal in response to the sequence of pulse on the line combined with received electromagnetic energy from reflections in the field. The sensor signals comprise pulses of radio frequency signals having a duration of less than 10 nanoseconds, and a pulse repetition rate on the order of 1 to 10 MegaHertz or less. The duration of the radio frequency pulses is adjusted to control the range of the sensor. An RF detector feeds a filter capacitor in response to received pulses on the strip line to produce a field reference signal representing the average amplitude of the received pulses. When a received pulse is mixed with a received echo, the mixing causes a fluctuation in the amplitude of the field reference signal, providing a range-limited Doppler type signature of a field disturbance.

  12. Sliding-gate valve for use with abrasive materials

    DOE Patents [OSTI]

    Ayers, Jr., William J.; Carter, Charles R.; Griffith, Richard A.; Loomis, Richard B.; Notestein, John E.

    1985-01-01

    The invention is a flow and pressure-sealing valve for use with abrasive solids. The valve embodies special features which provide for long, reliable operating lifetimes in solids-handling service. The valve includes upper and lower transversely slidable gates, contained in separate chambers. The upper gate provides a solids-flow control function, whereas the lower gate provides a pressure-sealing function. The lower gate is supported by means for (a) lifting that gate into sealing engagement with its seat when the gate is in its open and closed positions and (b) lowering the gate out of contact with its seat to permit abrasion-free transit of the gate between its open and closed positions. When closed, the upper gate isolates the lower gate from the solids. Because of this shielding action, the sealing surface of the lower gate is not exposed to solids during transit or when it is being lifted or lowered. The chamber containing the lower gate normally is pressurized slightly, and a sweep gas is directed inwardly across the lower-gate sealing surface during the vertical translation of the gate.

  13. Gated IR Images of Shocked Surfaces

    SciTech Connect (OSTI)

    S. S. Lutz; W. D. Turley; P. M. Rightley; L. E. Primas

    2001-06-01

    Gated infrared (IR) images have been taken of a series of shocked surface geometries in tin. Metal coupons machined with steps and flats were mounted directly to the high explosive. The explosive was point-initiated and 500-ns to 1-microsecond-wide gated images of the target were taken immediately following shock breakout using a Santa Barbara Focalplane InSb camera (SBF-134). Spatial distributions of surface radiance were extracted from the images of the shocked samples and found to be non-single-valued. Several geometries were modeled using CTH, a two-dimensional Eulerian hydrocode.

  14. Looking at Transistor Gate Oxide Formation in Real Time

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Looking at Transistor Gate Oxide Formation in Real Time Print The oxide gate layer is ... Now, for the first time, a group of researchers has obtained real-time oxidation results ...

  15. Chi-Nu "Gate Review" (Conference) | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    Chi-Nu "Gate Review" Citation Details In-Document Search Title: Chi-Nu "Gate Review" You are accessing a document from the Department of Energy's (DOE) SciTech Connect. This...

  16. Looking at Transistor Gate Oxide Formation in Real Time

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Looking at Transistor Gate Oxide Formation in Real Time Print The oxide gate layer is critical to every transistor, and present-day layer thicknesses are in the 10-20 range (1-2...

  17. Designing robust unitary gates: Application to concatenated composite pulses

    SciTech Connect (OSTI)

    Ichikawa, Tsubasa; Bando, Masamitsu; Kondo, Yasushi; Nakahara, Mikio

    2011-12-15

    We propose a simple formalism to design unitary gates robust against given systematic errors. This formalism generalizes our previous observation [Y. Kondo and M. Bando, J. Phys. Soc. Jpn. 80, 054002 (2011)] that vanishing dynamical phase in some composite gates is essential to suppress pulse-length errors. By employing our formalism, we derive a composite unitary gate which can be seen as a concatenation of two known composite unitary operations. The obtained unitary gate has high fidelity over a wider range of error strengths compared to existing composite gates.

  18. Method for voltage-gated protein fractionation

    DOE Patents [OSTI]

    Hatch, Anson; Singh, Anup K.

    2012-04-24

    We report unique findings on the voltage dependence of protein exclusion from the pores of nanoporous polymer exclusion membranes. The pores are small enough that proteins are excluded from passage with low applied electric fields, but increasing the field enables proteins to pass through. The requisite field necessary for a change in exclusion is protein-specific with a correlation to protein size. The field-dependence of exclusion is important to consider for preconcentration applications. The ability to selectively gate proteins at exclusion membranes is also a promising means for manipulating and characterizing proteins. We show that field-gated exclusion can be used to selectively remove proteins from a mixture, or to selectively trap protein at one exclusion membrane in a series.

  19. Gated monochromatic x-ray imager

    SciTech Connect (OSTI)

    Oertel, J.A.; Archuleta, T.; Clark, L.

    1995-09-01

    We have recently developed a gated monochromatic x-ray imaging diagnostic for the national Inertial-Confinement Fusion (ICF) program. This new imaging system will be one of the primary diagnostics to be utilized on University of Rochester`s Omega laser fusion facility. The new diagnostic is based upon a Kirkpatrick-Baez (KB) microscope dispersed by diffraction crystals, as first described by Marshall and Su. The dispersed images are gated by four individual proximity focused microchannel plates and recorded on film. Spectral coverage is tunable up to 8 keV, spectral resolution has been measured at 20 eV, temporal resolution is 80 ps, and spatial resolution is better than 10 {mu}m.

  20. Gated beam imager for heavy ion beams

    SciTech Connect (OSTI)

    Ahle, Larry; Hopkins, Harvey S.

    1998-12-10

    As part of the work building a small heavy-ion induction accelerator ring, or recirculator, at Lawrence Livermore National Laboratory, a diagnostic device measuring the four-dimensional transverse phase space of the beam in just a single pulse has been developed. This device, the Gated Beam Imager (GBI), consists of a thin plate filled with an array of 100-micron diameter holes and uses a Micro Channel Plate (MCP), a phosphor screen, and a CCD camera to image the beam particles that pass through the holes after they have drifted for a short distance. By time gating the MCP, the time evolution of the beam can also be measured, with each time step requiring a new pulse.

  1. Gated beam imager for heavy ion beams

    SciTech Connect (OSTI)

    Ahle, L.; Hopkins, H.S.

    1998-12-01

    As part of the work building a small heavy-ion induction accelerator ring, or recirculator, at Lawrence Livermore National Laboratory, a diagnostic device measuring the four-dimensional transverse phase space of the beam in just a single pulse has been developed. This device, the Gated Beam Imager (GBI), consists of a thin plate filled with an array of 100-micron diameter holes and uses a Micro Channel Plate (MCP), a phosphor screen, and a CCD camera to image the beam particles that pass through the holes after they have drifted for a short distance. By time gating the MCP, the time evolution of the beam can also be measured, with each time step requiring a new pulse. {copyright} {ital 1998 American Institute of Physics.}

  2. Cluster computing software for GATE simulations

    SciTech Connect (OSTI)

    Beenhouwer, Jan de; Staelens, Steven; Kruecker, Dirk; Ferrer, Ludovic; D'Asseler, Yves; Lemahieu, Ignace; Rannou, Fernando R.

    2007-06-15

    Geometry and tracking (GEANT4) is a Monte Carlo package designed for high energy physics experiments. It is used as the basis layer for Monte Carlo simulations of nuclear medicine acquisition systems in GEANT4 Application for Tomographic Emission (GATE). GATE allows the user to realistically model experiments using accurate physics models and time synchronization for detector movement through a script language contained in a macro file. The downside of this high accuracy is long computation time. This paper describes a platform independent computing approach for running GATE simulations on a cluster of computers in order to reduce the overall simulation time. Our software automatically creates fully resolved, nonparametrized macros accompanied with an on-the-fly generated cluster specific submit file used to launch the simulations. The scalability of GATE simulations on a cluster is investigated for two imaging modalities, positron emission tomography (PET) and single photon emission computed tomography (SPECT). Due to a higher sensitivity, PET simulations are characterized by relatively high data output rates that create rather large output files. SPECT simulations, on the other hand, have lower data output rates but require a long collimator setup time. Both of these characteristics hamper scalability as a function of the number of CPUs. The scalability of PET simulations is improved here by the development of a fast output merger. The scalability of SPECT simulations is improved by greatly reducing the collimator setup time. Accordingly, these two new developments result in higher scalability for both PET and SPECT simulations and reduce the computation time to more practical values.

  3. Inversion gate capacitance of undoped single-gate and double-gate field-effect transistor geometries in the extreme quantum limit

    SciTech Connect (OSTI)

    Majumdar, Amlan

    2015-05-28

    We present first-principle analytical derivations and numerically modeled data to show that the gate capacitance per unit gate area C{sub G} of extremely thin undoped-channel single-gate and double-gate field-effect transistor geometries in the extreme quantum limit with single-subband occupancy can be written as 1/C{sub G} = 1/C{sub OX} + N{sub G}/C{sub DOS} + N{sub G}/ηC{sub WF}, where N{sub G} is the number of gates, C{sub OX} is the oxide capacitance per unit area, C{sub DOS} is the density-of-states capacitance per unit area, C{sub WF} is the wave function spreading capacitance per unit area, and η is a constant on the order of 1.

  4. SU-E-T-350: Verification of Gating Performance of a New Elekta Gating Solution: Response Kit and Catalyst System

    SciTech Connect (OSTI)

    Xie, X; Cao, D; Housley, D; Mehta, V; Shepard, D

    2014-06-01

    Purpose: In this work, we have tested the performance of new respiratory gating solutions for Elekta linacs. These solutions include the Response gating and the C-RAD Catalyst surface mapping system.Verification measurements have been performed for a series of clinical cases. We also examined the beam on latency of the system and its impact on delivery efficiency. Methods: To verify the benefits of tighter gating windows, a Quasar Respiratory Motion Platform was used. Its vertical-motion plate acted as a respiration surrogate and was tracked by the Catalyst system to generate gating signals. A MatriXX ion-chamber array was mounted on its longitudinal-moving platform. Clinical plans are delivered to a stationary and moving Matrix array at 100%, 50% and 30% gating windows and gamma scores were calculated comparing moving delivery results to the stationary result. It is important to note that as one moves to tighter gating windows, the delivery efficiency will be impacted by the linac's beam-on latency. Using a specialized software package, we generated beam-on signals of lengths of 1000ms, 600ms, 450ms, 400ms, 350ms and 300ms. As the gating windows get tighter, one can expect to reach a point where the dose rate will fall to nearly zero, indicating that the gating window is close to beam-on latency. A clinically useful gating window needs to be significantly longer than the latency for the linac. Results: As expected, the use of tighter gating windows improved delivery accuracy. However, a lower limit of the gating window, largely defined by linac beam-on latency, exists at around 300ms. Conclusion: The Response gating kit, combined with the C-RAD Catalyst, provides an effective solution for respiratorygated treatment delivery. Careful patient selection, gating window design, even visual/audio coaching may be necessary to ensure both delivery quality and efficiency. This research project is funded by Elekta.

  5. GATE Center of Excellence in Lightweight Materials and Manufacturing

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Technologies | Department of Energy Lightweight Materials and Manufacturing Technologies GATE Center of Excellence in Lightweight Materials and Manufacturing Technologies 2012 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting ti026_vaidya_2012_p.pdf (4.01 MB) More Documents & Publications GATE Center of Excellence at UAB in Lightweight Materials for Automotive Applications GATE Center of Excellence in Lightweight

  6. GATE Center of Excellence in Lightweight Materials and Manufacturing...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Technologies Vehicle Technologies Office Merit Review 2014: GATE Center of Excellence at UAB for Lightweight Materials and Manufacturing for Automotive, Truck and Mass Transit...

  7. Vehicle Technologies Office Merit Review 2015: Gate Driver Optimizatio...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Gate Driver Optimization for WBG Applications Vehicle Technologies Office Merit Review ... Presentation given by Oak Ridge National Laboratory at 2015 DOE Hydrogen and Fuel Cells ...

  8. High Temperature, High Voltage Fully Integrated Gate Driver Circuit...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    D.C. PDF icon ape003tolbert2010p.pdf More Documents & Publications High Temperature, High Voltage Fully Integrated Gate Driver Circuit Wide Bandgap Materials Smart ...

  9. High Temperature, High Voltage Fully Integrated Gate Driver Circuit...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    -- Washington D.C. PDF icon ape03marlino.pdf More Documents & Publications High Temperature, High Voltage Fully Integrated Gate Driver Circuit Smart Integrated Power Module ...

  10. Gates County, North Carolina: Energy Resources | Open Energy...

    Open Energy Information (Open El) [EERE & EIA]

    Gates County, North Carolina: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 36.4202077, -76.6874701 Show Map Loading map......

  11. Quantifying Cradle-to-Farm Gate Life Cycle Impacts Associated...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Quantifying Cradle-to-Farm Gate Life Cycle Impacts Associated with Fertilizer used for Corn, Soybean, and Stover Production Fertilizer use can cause environmental problems, ...

  12. Penn State DOE Graduate Automotive Technology Education (Gate...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Penn State DOE Graduate Automotive Technology Education (Gate) Program for In-Vehicle, High-Power Energy Storage Systems Penn State DOE Graduate Automotive Technology Education ...

  13. PIA - Savannah River Nuclear Solution (SRNS) MedGate Occupational...

    Energy Savers

    PIA - Savannah River Nuclear Solution (SRNS) MedGate Occupational Health and Safety Medical System (OHS) (Includes the Drug and Alcohol Testing System (Assistant)) PIA - Savannah...

  14. PIA - Savannah River Nuclear Solution (SRNS) MedGate Occupational...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Health and Safety Medical System (OHS) (Includes the Drug and Alcohol Testing System (Assistant)) PIA - Savannah River Nuclear Solution (SRNS) MedGate Occupational Health and ...

  15. Stage Gate Review Guide for the Industrial Technologies Program

    Office of Energy Efficiency and Renewable Energy (EERE)

    Stage-Gate Innovation Management Guidelines: Managing Risk Through Structured Project Decision-Making, February 2007. From the Industrial Technologies Program (now the Advanced Manufacturing Office).

  16. Thermosensitive gating effect and selective gas adsorption in...

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Thermosensitive gating effect and selective gas adsorption in a porous coordination nanocage Previous Next List Dan Zhao , Daqiang Yuan , Rajamani Krishna , Jasper M. van Baten and...

  17. GATE Global Alternative Energy Holding AG | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    Energy Holding AG Place: Wrzburg, Bavaria, Germany Zip: 97080 Product: Germany-based biodiesel producer. References: GATE Global Alternative Energy Holding AG1 This article...

  18. Vehicle Technologies Office: Graduate Automotive Technology Education (GATE)

    Energy.gov [DOE]

    DOE established the Graduate Automotive Technology Education (GATE) Centers of Excellence to provide future generations of engineers and scientists with knowledge and skills in advanced automotive...

  19. Speed control system for an access gate

    SciTech Connect (OSTI)

    Bzorgi, Fariborz M.

    2012-03-20

    An access control apparatus for an access gate. The access gate typically has a rotator that is configured to rotate around a rotator axis at a first variable speed in a forward direction. The access control apparatus may include a transmission that typically has an input element that is operatively connected to the rotator. The input element is generally configured to rotate at an input speed that is proportional to the first variable speed. The transmission typically also has an output element that has an output speed that is higher than the input speed. The input element and the output element may rotate around a common transmission axis. A retardation mechanism may be employed. The retardation mechanism is typically configured to rotate around a retardation mechanism axis. Generally the retardation mechanism is operatively connected to the output element of the transmission and is configured to retard motion of the access gate in the forward direction when the first variable speed is above a control-limit speed. In many embodiments the transmission axis and the retardation mechanism axis are substantially co-axial. Some embodiments include a freewheel/catch mechanism that has an input connection that is operatively connected to the rotator. The input connection may be configured to engage an output connection when the rotator is rotated at the first variable speed in a forward direction and configured for substantially unrestricted rotation when the rotator is rotated in a reverse direction opposite the forward direction. The input element of the transmission is typically operatively connected to the output connection of the freewheel/catch mechanism.

  20. Modeling gated neutron images of THD capsules

    SciTech Connect (OSTI)

    Wilson, Douglas Carl; Grim, Gary P; Tregillis, Ian L; Wilke, Mark D; Morgan, George L; Loomis, Eric N; Wilde, Carl H; Oertel, John A; Fatherley, Valerie E; Clark, David D; Schmitt, Mark J; Merrill, Frank E; Wang, Tai - Sen F; Danly, Christopher R; Batha, Steven H; Patel, M; Sepke, S; Hatarik, R; Fittinghoff, D; Bower, D; Marinak, M; Munro, D; Moran, M; Hilko, R; Frank, M; Buckles, R

    2010-01-01

    Time gating a neutron detector 28m from a NIF implosion can produce images at different energies. The brighter image near 14 MeV reflects the size and symmetry of the capsule 'hot spot'. Scattered neutrons, {approx}9.5-13 MeV, reflect the size and symmetry of colder, denser fuel, but with only {approx}1-7% of the neutrons. The gated detector records both the scattered neutron image, and, to a good approximation, an attenuated copy of the primary image left by scintillator decay. By modeling the imaging system the energy band for the scattered neutron image (10-12 MeV) can be chosen, trading off the decayed primary image and the decrease of scattered image brightness with energy. Modeling light decay from EJ399, BC422, BCF99-55, Xylene, DPAC-30, and Liquid A leads to a preference from BCF99-55 for the first NIF detector, but DPAC 30 and Liquid A would be preferred if incorporated into a system. Measurement of the delayed light from the NIF scintillator using implosions at the Omega laser shows BCF99-55 to be a good choice for down-scattered imaging at 28m.

  1. University of Illinois at Urbana-Champaigns GATE Center for...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Champaigns GATE Center for Advanced Automotive Bio-Fuel Combustion Engines University of Illinois at Urbana-Champaigns GATE Center for Advanced Automotive Bio-Fuel Combustion ...

  2. Gated Si nanowires for large thermoelectric power factors

    SciTech Connect (OSTI)

    Neophytou, Neophytos; Kosina, Hans

    2014-08-18

    We investigate the effect of electrostatic gating on the thermoelectric power factor of p-type Si nanowires (NWs) of up to 20 nm in diameter in the [100], [110], and [111] crystallographic transport orientations. We use atomistic tight-binding simulations for the calculation of the NW electronic structure, coupled to linearized Boltzmann transport equation for the calculation of the thermoelectric coefficients. We show that gated NW structures can provide ∼5× larger thermoelectric power factor compared to doped channels, attributed to their high hole phonon-limited mobility, as well as gating induced bandstructure modifications which further improve mobility. Despite the fact that gating shifts the charge carriers near the NW surface, surface roughness scattering is not strong enough to degrade the transport properties of the accumulated hole layer. The highest power factor is achieved for the [111] NW, followed by the [110], and finally by the [100] NW. As the NW diameter increases, the advantage of the gated channel is reduced. We show, however, that even at 20 nm diameters (the largest ones that we were able to simulate), a ∼3× higher power factor for gated channels is observed. Our simulations suggest that the advantage of gating could still be present in NWs with diameters of up to ∼40 nm.

  3. Stage Gate Review Guide for the Biomass Program | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Biomass Program Stage Gate Review Guide for the Biomass Program Stage Gate Management in the Biomass Program (now the Bioenergy Technologies Office), a document from February 2005. Stage Gate Review Guide (282.61 KB) More Documents & Publications Stage Gate Review Guide for the Industrial Technologies Program 2009 Biochemical Conversion Platform Review Report 2009 Thermochemical Conversion Platform Review Report

  4. Gating of Permanent Molds for ALuminum Casting (Technical Report...

    Office of Scientific and Technical Information (OSTI)

    problems caused by improper gating are entrained aluminum oxide films and entrapped gas. ... Publication Date: 2004-03-30 OSTI Identifier: 822451 DOE Contract Number: FC36-01ID13983 ...

  5. Ultrafast terahertz gating of the polarization and giant nonlinear...

    Office of Scientific and Technical Information (OSTI)

    Journal Article: Ultrafast terahertz gating of the polarization and giant nonlinear optical response in BiFeO3 thin films Citation Details In-Document Search Title: Ultrafast ...

  6. Liquid-based gating mechanism with tunable multiphase selectivity...

    Office of Scientific and Technical Information (OSTI)

    uses a capillary-stabilized liquid as a reversible, reconfigurable gate that fills and seals pores in the closed state, and creates a non-fouling, liquid-lined pore in the open ...

  7. Bill Gates visit to Idaho validates innovation role for national

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    laboratories FOR IMMEDIATE RELEASE Oct. 24, 2013 NEWS MEDIA CONTACTS: Amy Lientz, 208-520-7718, amy.lientz@inl.gov Teri Ehresman, 208-526-7785, teri.ehresman@inl.gov Bill Gates visit to Idaho validates innovation role for national laboratories IDAHO FALLS - Privately funded research utilizing government owned facilities validates the important role national laboratories have in advancing innovation. Bill Gates, American business magnate and chair of the nuclear reactor startup company

  8. Final Technical GATE Report, 1998-2006

    SciTech Connect (OSTI)

    GATE Fuel Cell Vehicle Center

    2006-09-30

    In 1998, the U.S. Department of Energy (DOE) funded 10 proposals to establish graduate automotive technology education (GATE) centers of excellence at nine universities, each addressing a specific technological area. The University of California, Davis was chosen for two centers: Fuel Cell Center and Hybrid-Electric Vehicle Design Center (power drivetrains and control strategies). This report is specific to the Fuel Cell Center only, which was housed at the UC Davis Institute of Transportation Studies (ITS-Davis). ITS-Davis created the Fuel Cell Vehicle Center, with the following goals: (1) create an interdisciplinary fuel cell vehicle curriculum that cuts across engineering, the physical sciences and, to a lesser extent, the social sciences; (2) expand and strengthen the then-emerging multidisciplinary fuel cell vehicle research program; (3) strengthen links with industry; (4) create an active public outreach program; and (5) serve as neutral ground for interactions between academia, the auto, energy, and technology industries, government, and public-interest non-governmental organizations. At the time of proposal, the Center had a solid track record in fuel cell research, strong connections with industry, strong campus support, a core group of distinguished and motivated faculty, and an established institutional foundation for fuel cell vehicle research and education.

  9. Impulse radar with swept range gate

    DOE Patents [OSTI]

    McEwan, T.E.

    1998-09-08

    A radar range finder and hidden object locator is based on ultra-wide band radar with a high resolution swept range gate. The device generates an equivalent time amplitude scan with a typical range of 4 inches to 20 feet, and an analog range resolution as limited by a jitter of on the order of 0.01 inches. A differential sampling receiver is employed to effectively eliminate ringing and other aberrations induced in the receiver by the near proximity of the transmit antenna, so a background subtraction is not needed, simplifying the circuitry while improving performance. Techniques are used to reduce clutter in the receive signal, such as decoupling the receive and transmit cavities by placing a space between them, using conductive or radiative damping elements on the cavities, and using terminating plates on the sides of the openings. The antennas can be arranged in a side-by-side parallel spaced apart configuration or in a coplanar opposed configuration which significantly reduces main bang coupling. 25 figs.

  10. Impulse radar with swept range gate

    DOE Patents [OSTI]

    McEwan, Thomas E. (Livermore, CA)

    1998-09-08

    A radar range finder and hidden object locator is based on ultra-wide band radar with a high resolution swept range gate. The device generates an equivalent time amplitude scan with a typical range of 4 inches to 20 feet, and an analog range resolution as limited by a jitter of on the order of 0.01 inches. A differential sampling receiver is employed to effectively eliminate ringing and other aberrations induced in the receiver by the near proximity of the transmit antenna (10), so a background subtraction is not needed, simplifying the circuitry while improving performance. Techniques are used to reduce clutter in the receive signal, such as decoupling the receive (24) and transmit cavities (22) by placing a space between them, using conductive or radiative damping elements on the cavities, and using terminating plates on the sides of the openings. The antennas can be arranged in a side-by-side parallel spaced apart configuration or in a coplanar opposed configuration which significantly reduces main bang coupling.

  11. Gated integrator with signal baseline subtraction

    DOE Patents [OSTI]

    Wang, X.

    1996-12-17

    An ultrafast, high precision gated integrator includes an opamp having differential inputs. A signal to be integrated is applied to one of the differential inputs through a first input network, and a signal indicative of the DC offset component of the signal to be integrated is applied to the other of the differential inputs through a second input network. A pair of electronic switches in the first and second input networks define an integrating period when they are closed. The first and second input networks are substantially symmetrically constructed of matched components so that error components introduced by the electronic switches appear symmetrically in both input circuits and, hence, are nullified by the common mode rejection of the integrating opamp. The signal indicative of the DC offset component is provided by a sample and hold circuit actuated as the integrating period begins. The symmetrical configuration of the integrating circuit improves accuracy and speed by balancing out common mode errors, by permitting the use of high speed switching elements and high speed opamps and by permitting the use of a small integrating time constant. The sample and hold circuit substantially eliminates the error caused by the input signal baseline offset during a single integrating window. 5 figs.

  12. Gated integrator with signal baseline subtraction

    DOE Patents [OSTI]

    Wang, Xucheng

    1996-01-01

    An ultrafast, high precision gated integrator includes an opamp having differential inputs. A signal to be integrated is applied to one of the differential inputs through a first input network, and a signal indicative of the DC offset component of the signal to be integrated is applied to the other of the differential inputs through a second input network. A pair of electronic switches in the first and second input networks define an integrating period when they are closed. The first and second input networks are substantially symmetrically constructed of matched components so that error components introduced by the electronic switches appear symmetrically in both input circuits and, hence, are nullified by the common mode rejection of the integrating opamp. The signal indicative of the DC offset component is provided by a sample and hold circuit actuated as the integrating period begins. The symmetrical configuration of the integrating circuit improves accuracy and speed by balancing out common mode errors, by permitting the use of high speed switching elements and high speed opamps and by permitting the use of a small integrating time constant. The sample and hold circuit substantially eliminates the error caused by the input signal baseline offset during a single integrating window.

  13. Rapidly reconfigurable all-optical universal logic gate

    DOE Patents [OSTI]

    Goddard, Lynford L.; Bond, Tiziana C.; Kallman, Jeffrey S.

    2010-09-07

    A new reconfigurable cascadable all-optical on-chip device is presented. The gate operates by combining the Vernier effect with a novel effect, the gain-index lever, to help shift the dominant lasing mode from a mode where the laser light is output at one facet to a mode where it is output at the other facet. Since the laser remains above threshold, the speed of the gate for logic operations as well as for reprogramming the function of the gate is primarily limited to the small signal optical modulation speed of the laser, which can be on the order of up to about tens of GHz. The gate can be rapidly and repeatedly reprogrammed to perform any of the basic digital logic operations by using an appropriate analog optical or electrical signal at the gate selection port. Other all-optical functionality includes wavelength conversion, signal duplication, threshold switching, analog to digital conversion, digital to analog conversion, signal routing, and environment sensing. Since each gate can perform different operations, the functionality of such a cascaded circuit grows exponentially.

  14. Innovative secondary support systems for gate roads

    SciTech Connect (OSTI)

    Barczak, T.; Molinda, G.M.; Zelanko, J.C.

    1996-12-31

    With the development of the shield support, the primary requirement for successful ground control in longwall mining is to provide stable gate road and bleeder entries. Wood cribbing has been the dominant form of secondary and supplemental support. However, the cost and limited availability of timber, along with the poor performance of softwood crib supports, has forced western U.S. mines to explore the utilization of support systems other than conventional wood cribbing. The recent success of cable bolts has engendered much interest from western operators. Eastern U.S. coal operators are also now experimenting with various intrinsic and freestanding alternative support systems that provide effective ground control while reducing material handling costs and injuries. These innovative freestanding support systems include (1) {open_quotes}The Can{close_quotes} support by Burrell Mining Products International, Inc., (2) Hercules and Link-N-Lock wood cribs and Propsetter supports by Strata Products (USA) Inc., (3) Variable Yielding Crib and Power Crib supports by Mountainland Support Systems, (4) the Confined Core Crib developed by Southern Utah Fuels Corporation; and (5) the MEGA prop by MBK Hydraulik. This paper assesses design considerations and compares the performance and application of these alternative secondary support systems. Support performance in the form of load-displacement behavior is compared to conventional wood cribbing. Much of the data was developed through full-scale tests conducted by the U.S. Bureau of Mines (USBM) at the Strategic Structures Testing Laboratory in the unique Mine Roof Simulator load frame at the Pittsburgh Research Center. A summary of current mine experience with these innovative supports is also documented.

  15. Pressure locking and thermal binding of gate valves

    SciTech Connect (OSTI)

    Kelly, E.M.

    1996-12-01

    Pressure locking and thermal binding represent potential common mode failure mechanisms that can cause safety-related power-operated gate valves to fail in the closed position, thus rendering redundant safety-related systems incapable of performing their safety functions. Supplement 6 to Generic Letter 89-10, {open_quotes}Safety-Related Motor-Operated Gate Valve Testing and Surveillance,{close_quotes} provided an acceptable approach to addressing pressure locking and thermal binding of gate valves. More recently, the NRC has issued Generic Letter 95-07, {open_quotes}Pressure Locking and Thermal Binding of Safety-Related Power-Operated Gate Valves,{close_quotes} to request that licensees take certain actions to ensure that safety-related power-operated gate valves that are susceptible to pressure locking or thermal binding are capable of performing their safety functions within the current licensing bases. Over the past two years, several plants in Region I determined that valves in certain systems were potentially susceptible to pressure locking and thermal binding, and have taken various corrective actions. The NRC Region I Systems Engineering Branch has been actively involved in the inspection of licensee actions in response to the pressure locking and thermal binding issue. Region I continues to maintain an active involvement in this area, including participation with the Office of Nuclear Reactor Regulation in reviewing licensee responses to Generic Letter 95-07.

  16. Deterministic and cascadable conditional phase gate for photonic qubits

    SciTech Connect (OSTI)

    Chudzicki, Christopher; Chuang, Isaac; Shapiro, Jeffrey H.

    2014-12-04

    Previous analyses of conditional ?{sub NL}-phase gates for photonic qubits that treat crossphase modulation (XPM) in a causal, multimode, quantum field setting suggest that a large (?? rad) nonlinear phase shift is always accompanied by fidelity-degrading noise [J. H. Shapiro, Phys. Rev. A 73, 062305 (2006); J. Gea-Banacloche, Phys. Rev. A 81, 043823 (2010)]. Using an atomic V-system to model an XPM medium, we present a conditional phase gate that, for sufficiently small nonzero ?{sub NL}, has high fidelity. The gate is made cascadable by using a special measurement, principal mode projection, to exploit the quantum Zeno effect and preclude the accumulation of fidelity-degrading departures from the principal-mode Hilbert space when both control and target photons illuminate the gate. The nonlinearity of the V-system we study is too weak for this particular implementation to be practical. Nevertheless, the idea of cascading through principal mode projection is of potential use to overcome fidelity degrading noise for a wide variety of nonlinear optical primitive gates.

  17. Effects of breathing variation on gating window internal target volume in respiratory gated radiation therapy

    SciTech Connect (OSTI)

    Cai Jing; McLawhorn, Robert; Read, Paul W.; Larner, James M.; Yin, Fang-fang; Benedict, Stanley H.; Sheng, Ke

    2010-08-15

    Purpose: To investigate the effects of breathing variation on gating window internal target volume (ITV{sub GW}) in respiratory gated radiation therapy. Method and Materials: Two-dimensional dynamic MRI (dMRI) of lung motion was acquired in ten volunteers and eight lung cancer patients. Resorted dMRI using 4DCT acquisition method (RedCAM) was generated for selected subjects by simulating the image rebinning process. A dynamic software generated phantom (dSGP) was created by moving a solid circle (to mimic the ''tumor'') with dMRI-determined motion trajectories. The gating window internal target area (ITA{sub GW}, 2D counterpart of ITV{sub GW}) was determined from both RedCAM and dSGP/dMRI. Its area (A), major axis (L1), minor axis (L2), and similarity (S) were calculated and compared. Results: In the phantom study of 3 cm tumor, measurements of the ITA{sub GW} from dSGP (A=10.0{+-}1.3 cm{sup 2}, L1=3.8{+-}0.4 cm, and L2=3.3{+-}0.1 cm) are significantly (p<0.001) greater than those from RedCAM (A=8.5{+-}0.7 cm{sup 2}, L1=3.5{+-}0.2 cm, and L2=3.1{+-}0.1 cm). Similarly, the differences are significantly greater (p<0.001) for the 1 cm tumor (A=1.9{+-}0.5 cm{sup 2}, L1=1.9{+-}0.4 cm, and L2=1.3{+-}0.1 cm in dSGP; A=1.3{+-}0.1 cm{sup 2}, L1=1.5{+-}0.2 cm, and L2=1.1{+-}0.1 cm in RedCAM). In patient studies, measurements of the ITA{sub GW} from dMRI (A=15.5{+-}8.2 cm{sup 2}, L1=5.0{+-}1.1 cm, and L2=3.8{+-}1.2 cm) are also significantly greater (p<0.05) than those from RedCAM (A=13.2{+-}8.5 cm{sup 2}, L1=4.3{+-}1.4 cm, and L2=3.7{+-}1.2 cm). Similarities were 0.9{+-}0.1, 0.8{+-}0.1, and 0.8{+-}0.1 in the 3 cm tumor phantom, 1 cm tumor phantom, and patient studies, respectively. Conclusion: ITV{sub GW} can be underestimated by 4DCT due to breathing variations. An additional margin may be needed to account for this potential error in generating a PTV{sub GW}. Cautions need to be taken when generating ITV{sub GW} from 4DCT in respiratory gated radiation therapy, especially

  18. Nonlinear transport in ionic liquid gated strontium titanate nanowires

    SciTech Connect (OSTI)

    Bretz-Sullivan, Terence M.; Goldman, A. M.

    2015-09-14

    Measurements of the current-voltage (I–V) characteristics of ionic liquid gated nanometer scale channels of strontium titanate have been carried out. At low gate voltages, the I–V characteristics exhibit a large voltage threshold for conduction and a nonlinear power law behavior at all temperatures measured. The source-drain current of these nanowires scales as a power law of the difference between the source-drain voltage and the threshold voltage. The scaling behavior of the I–V characteristic is reminiscent of collective electronic transport through an array of quantum dots. At large gate voltages, the narrow channel acts as a quasi-1D wire whose conductance follows Landauer's formula for multichannel transport.

  19. Ligand-gated Diffusion Across the Bacterial Outer Membrane

    SciTech Connect (OSTI)

    B Lepore; M Indic; H Pham; E Hearn; D Patel; B van den Berg

    2011-12-31

    Ligand-gated channels, in which a substrate transport pathway is formed as a result of the binding of a small-molecule chemical messenger, constitute a diverse class of membrane proteins with important functions in prokaryotic and eukaryotic organisms. Despite their widespread nature, no ligand-gated channels have yet been found within the outer membrane (OM) of Gram-negative bacteria. Here we show, using in vivo transport assays, intrinsic tryptophan fluorescence and X-ray crystallography, that high-affinity (submicromolar) substrate binding to the OM long-chain fatty acid transporter FadL from Escherichia coli causes conformational changes in the N terminus that open up a channel for substrate diffusion. The OM long-chain fatty acid transporter FadL from E. coli is a unique paradigm for OM diffusion-driven transport, in which ligand gating within a {beta}-barrel membrane protein is a prerequisite for channel formation.

  20. Compositional and Gate Tuning of the Interfacial Conductivity in

    Office of Scientific and Technical Information (OSTI)

    LaAlO3/LaTiO3/SrTiO3 Heterostructures (Journal Article) | SciTech Connect Compositional and Gate Tuning of the Interfacial Conductivity in LaAlO3/LaTiO3/SrTiO3 Heterostructures Citation Details In-Document Search Title: Compositional and Gate Tuning of the Interfacial Conductivity in LaAlO3/LaTiO3/SrTiO3 Heterostructures Authors: Hosoda, Masayuki ; Bell, Christopher ; Hikita, Yasuyuki ; Hwang, Harold Y. Publication Date: 2012-12-06 OSTI Identifier: 1056813 Report Number(s): SLAC-PUB-15308

  1. United States Army; Fort Gordon, Georgia, Range Control Operations

    Office of Environmental Management (EM)

    ... such locations are Hwy 125 side gates into Gun Site 51, L-Lake gate, or Road 9. Units will ... as marking cartridges come in many sizes for pistol, rifle, and submachine gun training. ...

  2. Side-gate modulation effects on high-quality BN-Graphene-BN nanoribbon capacitors

    SciTech Connect (OSTI)

    Wang, Yang; Chen, Xiaolong; Ye, Weiguang; Wu, Zefei; Han, Yu; Han, Tianyi; He, Yuheng; Cai, Yuan; Wang, Ning

    2014-12-15

    High-quality BN-Graphene-BN nanoribbon capacitors with double side-gates of graphene have been experimentally realized. The double side-gates can effectively modulate the electronic properties of graphene nanoribbon capacitors. By applying anti-symmetric side-gate voltages, we observed significant upward shifting and flattening of the V-shaped capacitance curve near the charge neutrality point. Symmetric side-gate voltages, however, only resulted in tilted upward shifting along the opposite direction of applied gate voltages. These modulation effects followed the behavior of graphene nanoribbons predicted theoretically for metallic side-gate modulation. The negative quantum capacitance phenomenon predicted by numerical simulations for graphene nanoribbons modulated by graphene side-gates was not observed, possibly due to the weakened interactions between the graphene nanoribbon and side-gate electrodes caused by the Ga{sup +} beam etching process.

  3. Radiation Hardening of Gated X-ray Imagers for the National Ignition...

    Office of Scientific and Technical Information (OSTI)

    Radiation Hardening of Gated X-ray Imagers for the National Ignition Facility Citation Details In-Document Search Title: Radiation Hardening of Gated X-ray Imagers for the National ...

  4. Electrolyte Gate-Controlled Kondo Effect in SrTiO3 (Journal Article...

    Office of Scientific and Technical Information (OSTI)

    Electrolyte Gate-Controlled Kondo Effect in SrTiO3 Prev Next Title: Electrolyte Gate-Controlled Kondo Effect in SrTiO3 Authors: Lee, Menyoung ; Williams, J. R. ; Zhang, Sipei ...

  5. Fast Out of the Gate: How Developing Asian Countries can Prepare...

    Open Energy Information (Open El) [EERE & EIA]

    (Redirected from Fast Out of the Gate: How Developing Asian Countries can Prepare to Access International Green Growth Financing)...

  6. Technical Feasibility Assessment of LED Roadway Lighting on the Golden Gate Bridge

    SciTech Connect (OSTI)

    Tuenge, J. R.

    2012-09-01

    GATEWAY program report on the technical feasibility of LED roadway lighting on the Golden Gate Bridge in San Francisco, CA.

  7. Controlled phase gate for solid-state charge-qubit architectures

    SciTech Connect (OSTI)

    Schirmer, S.G.; Oi, D.K.L.; Greentree, Andrew D.

    2005-01-01

    We describe a mechanism for realizing a controlled phase gate for solid-state charge qubits. By augmenting the positionally defined qubit with an auxiliary state, and changing the charge distribution in the three-dot system, we are able to effectively switch the Coulombic interaction, effecting an entangling gate. We consider two architectures, and numerically investigate their robustness to gate noise.

  8. DOE Tour of Zero Floorplans: Row Homes at RidgeGate by Thrive Home Builders

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    | Department of Energy Row Homes at RidgeGate by Thrive Home Builders DOE Tour of Zero Floorplans: Row Homes at RidgeGate by Thrive Home Builders DOE Tour of Zero Floorplans: Row Homes at RidgeGate by Thrive Home Builders

  9. Gating of high-mobility InAs metamorphic heterostructures

    SciTech Connect (OSTI)

    Shabani, J.; McFadden, A. P.; Shojaei, B.; Palmstrøm, C. J.

    2014-12-29

    We investigate the performance of gate-defined devices fabricated on high mobility InAs metamorphic heterostructures. We find that heterostructures capped with In{sub 0.75}Ga{sub 0.25}As often show signs of parallel conduction due to proximity of their surface Fermi level to the conduction band minimum. Here, we introduce a technique that can be used to estimate the density of this surface charge that involves cool-downs from room temperature under gate bias. We have been able to remove the parallel conduction under high positive bias, but achieving full depletion has proven difficult. We find that by using In{sub 0.75}Al{sub 0.25}As as the barrier without an In{sub 0.75}Ga{sub 0.25}As capping, a drastic reduction in parallel conduction can be achieved. Our studies show that this does not change the transport properties of the quantum well significantly. We achieved full depletion in InAlAs capped heterostructures with non-hysteretic gating response suitable for fabrication of gate-defined mesoscopic devices.

  10. Temperature-controlled molecular depolarization gates in nuclear magnetic resonance

    SciTech Connect (OSTI)

    Schroder, Leif; Schroder, Leif; Chavez, Lana; Meldrum, Tyler; Smith, Monica; Lowery, Thomas J.; E. Wemmer, David; Pines, Alexander

    2008-02-27

    Down the drain: Cryptophane cages in combination with selective radiofrequency spin labeling can be used as molecular 'transpletor' units for transferring depletion of spin polarization from a hyperpolarized 'source' spin ensemble to a 'drain' ensemble. The flow of nuclei through the gate is adjustable by the ambient temperature, thereby enabling controlled consumption of hyperpolarization.

  11. High Temperature, High Voltage Fully Integrated Gate Driver Circuit |

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Department of Energy 10 DOE Vehicle Technologies and Hydrogen Programs Annual Merit Review and Peer Evaluation Meeting, June 7-11, 2010 -- Washington D.C. ape003_tolbert_2010_p.pdf (757.36 KB) More Documents & Publications High Temperature, High Voltage Fully Integrated Gate Driver Circuit Wide Bandgap Materials Smart Integrated Power Module

  12. High Temperature, High Voltage Fully Integrated Gate Driver Circuit |

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Department of Energy 09 DOE Hydrogen Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting, May 18-22, 2009 -- Washington D.C. ape_03_marlino.pdf (846.17 KB) More Documents & Publications High Temperature, High Voltage Fully Integrated Gate Driver Circuit Smart Integrated Power Module Wide Bandgap Materials

  13. Optimal gate-width setting for passive neutrons multiplicity counting

    SciTech Connect (OSTI)

    Croft, Stephen; Evans, Louise G; Schear, Melissa A

    2010-01-01

    When setting up a passive neutron coincidence counter it is natural to ask what coincidence gate settings should be used to optimize the counting precision. If the gate width is too short then signal is lost and the precision is compromised because in a given period only a few coincidence events will be observed. On the other hand if the gate is too large the signal will be maximized but it will also be compromised by the high level of random pile-up or Accidental coincidence events which must be subtracted. In the case of shift register electronics connected to an assay chamber with an exponential dieaway profile operating in the regime where the Accidentals rate dominates the Reals coincidence rate but where dead-time is not a concern, simple arguments allow one to show that the relative precision on the net Reals rate is minimized when the coincidence gate is set to about 1.2 times the lie dieaway time of the system. In this work we show that making the same assumptions it is easy to show that the relative precision on the Triples rates is also at a minimum when the relative precision of the Doubles (or Reals) is at a minimum. Although the analysis is straightforward to our knowledge such a discussion has not been documented in the literature before. Actual measurement systems do not always behave in the ideal we choose to model them. Fortunately however the variation in the relative precision as a function of gate width is rather flat for traditional safeguards counters and so the performance is somewhat forgiving of the exact choice. The derivation further serves to delineate the important parameters which determine the relative counting precision of the Doubles and Triples rates under the regime considered. To illustrate the similarities and differences we consider the relative standard deviation that might be anticipated for a passive correlation count of an axial section of a spent nuclear fuel assembly under practically achievable conditions.

  14. SU-C-210-03: Impact of Breathing Irregularities On Gated Treatments

    SciTech Connect (OSTI)

    Schiuma, D; Arheit, M; Schmelzer, P; Scheib, S; Buchsbaum, T; Pemler, P

    2015-06-15

    Purpose: To evaluate the effect of breathing irregularities on target location in gated treatments using amplitude and phase gating. Methods: 111 breathing patterns acquired using RPM system were categorized based on period and amplitude STD as regular (STD period ≤ 0.5 s, STD amplitude ≤ 1.5 mm), medium (0.5 s < STD period ≤ 1 s, 1.5 mm < STD amplitude ≤ 3 mm) and irregular (STD period > 1 s, STD amplitude > 3 mm). One pattern representative of the average defined population was selected per category and corresponding target motion reproduced using Quasar Respiratory Motion Phantom. Phantom in motion underwent 4D-CT scan with phase reconstruction. Gated window was defined at end of exhale and DRRs reconstructed in treatment planning at 40% (beam on) and 60% phase (beam off). Target location uncertainty was assessed by comparing gated kV triggered images continuously acquired at beam on/off on a True Beam 2.0 with corresponding DRRs. Results: Average target uncertainty with amplitude gating was in [0.4 – 1.9] mm range for the different scenarios with maximum STD of 1.2 mm for the irregular pattern. Average target uncertainty with phase gating was [1.1 – 2.2] mm for regular and medium patterns, while it increased to [3.6 – 9.6] mm for the irregular pattern. Live gated motion was stable with amplitude gating, while increasing with phase gating for the irregular pattern. Treatment duration range was [68 – 160] s with amplitude and [70 – 74] s with phase gating. Conclusion: Breathing irregularities were found to affect gated treatments only when using phase gating. For regular and medium patterns no significant difference was found between the two gating strategies. Amplitude gating ensured stable gated motion within the different patterns, thus reducing intra-fraction target location variability for the irregular pattern and resulting in longer treatment duration.

  15. Negative differential transconductance in electrolyte-gated ruthenate

    SciTech Connect (OSTI)

    Hassan, Muhammad Umair; Dhoot, Anoop Singh; Wimbush, Stuart C.

    2015-01-19

    We report on a study of electric field-induced doping of the highly conductive ruthenate SrRuO{sub 3} using an ionic liquid as the gate dielectric in a field-effect transistor configuration. Two distinct carrier transport regimes are identified for increasing positive gate voltage in thin (10 nm) films grown heteroepitaxially on SrTiO{sub 3} substrates. For V{sub g} = 2 V and lower, the sample shows an increased conductivity of up to 13%, as might be expected for electron doping of a metal. At higher V{sub g} = 2.5 V, we observe a large decrease in electrical conductivity of >20% (at 4.2 K) due to the prevalence of strongly blocked conduction pathways.

  16. Unitary-gate synthesis for continuous-variable systems

    SciTech Connect (OSTI)

    Fiurasek, Jaromir

    2003-08-01

    We investigate the synthesis of continuous-variable two-mode unitary gates in the setting where two modes A and B are coupled by a fixed quadratic Hamiltonian H. The gate synthesis consists of a sequence of evolutions governed by Hamiltonian H, which are interspaced by local phase shifts applied to A and B. We concentrate on protocols that require the minimum number of necessary steps and we show how to implement the beam splitter and the two-mode squeezer in just three steps. Particular attention is paid to Hamiltonian x{sub A}p{sub B} that describes the effective off-resonant interaction of light with the collective atomic spin.

  17. Quantum gate using qubit states separated by terahertz

    SciTech Connect (OSTI)

    Toyoda, Kenji; Urabe, Shinji [Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531 (Japan); JST-CREST, 4-1-8 Honmachi, Kawaguchi, Saitama 331-0012 (Japan); Haze, Shinsuke [Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531 (Japan); Yamazaki, Rekishu [JST-CREST, 4-1-8 Honmachi, Kawaguchi, Saitama 331-0012 (Japan)

    2010-03-15

    A two-qubit quantum gate is realized using electronically excited states in a single ion with an energy separation on the order of a terahertz times the Planck constant as a qubit. Two phase-locked lasers are used to excite a stimulated Raman transition between two metastable states D{sub 3/2} and D{sub 5/2} separated by 1.82 THz in a single trapped {sup 40}Ca{sup +} ion to construct a qubit, which is used as the target bit for the Cirac-Zoller two-qubit controlled NOT gate. Quantum dynamics conditioned on a motional qubit is clearly observed as a fringe reversal in Ramsey interferometry.

  18. A Compact Reactor Gate Discharge Monitor for Spent Fuel.

    SciTech Connect (OSTI)

    Franco, J. B.; Menlove, Howard O.; Eccleston, G. W.; Miller, M. C.

    2005-01-01

    This paper presents a new design for a reactor gate discharge monitor that has evolved from the baseline discharge monitors used at the Fugen and Tokai-1 reactors in Japan. The main design innovation is the ability to determine direction-of-motion of spent fuel using a single sensor module, as opposed to the two modules used in both baseline design systems. Use of a single module reduces the final system complexity and weight significantly without compromising functionality. The reactor gate discharge monitor uses standard International Atomic Energy Agency (IAEA) hardware and software components. The requirements to determine direction-of-motion from a single module precipitated several development efforts described herein in both the MiniGRAND data acquisition hardware and in the uninterruptible power supply source.

  19. Amorphorized tantalum-nickel binary films for metal gate applications

    SciTech Connect (OSTI)

    Ouyang, Jiaomin; Wongpiya, Ranida; Clemens, Bruce M.; Deal, Michael D.; Nishi, Yoshio

    2015-04-13

    Amorphous metal gates have the potential to eliminate the work function variation due to grain orientation for poly-crystalline metal gate materials, which is a leading contributor to threshold voltage variation for small transistors. Structural and electrical properties of TaNi alloys using co-sputtering with different compositions and multilayer structures with different thicknesses are investigated in this work. It is found that TaNi films are amorphous for a wide range of compositions as deposited, and the films stay amorphous after annealing at 400?C in RTA for 1?min and up to at least 700?C depending on the composition. The amorphous films eventually crystallize into Ni, Ta, and TaNi{sub 3} phases at high enough temperature. For multilayer Ta/Ni structures, samples with individual layer thickness of 0.12?nm and 1.2?nm are amorphous as deposited due to intermixing during deposition, and stay amorphous until annealed at 500?C. The resistivity of the films as-deposited are around 200 ??cm. The work function of the alloy is fixed at close to the Ta work function of 4.6?eV for a wide range of compositions. This is attributed to the segregation of Ta at the metal-oxide interface, which is confirmed by XPS depth profile. Overall, the excellent thermal stability and low resistivity makes this alloy system a promising candidate for eliminating work function variation for gate last applications, as compared to crystalline Ta or TiN gates.

  20. Microsoft Word - S.J. Gates-1.doc

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Ronald E. Hatcher Science on Saturday Lecture Series 07 February 2015 IS SUSY THE GUARDIAN OF OUR REALITY FROM OBLIVION? S. James Gates, Jr. Distinguished University Professor, University System of Maryland Regents Professor, John S. Toll Professor of Physics, and Center for String & Particle Theory Director University of Maryland, College Park, MD ABSTRACT: The proposed property of supersymmetry (SUSY) is being searched for by the LHC in its newest scientific planned run. What is SUSY? How

  1. GATE Center for Automotive Fuel Cell Systems at Virginia Tech

    SciTech Connect (OSTI)

    Nelson, Douglas

    2011-09-30

    The Virginia Tech GATE Center for Automotive Fuel Cell Systems (CAFCS) achieved the following objectives in support of the domestic automotive industry: Expanded and updated fuel cell and vehicle technologies education programs; Conducted industry directed research in three thrust areas development and characterization of materials for PEM fuel cells; performance and durability modeling for PEM fuel cells; and fuel cell systems design and optimization, including hybrid and plug-in hybrid fuel cell vehicles; Developed MS and Ph.D. engineers and scientists who are pursuing careers related to fuel cells and automotive applications; Published research results that provide industry with new knowledge which contributes to the advancement of fuel cell and vehicle systems commercialization. With support from the Dept. of Energy, the CAFCS upgraded existing graduate course offerings; introduced a hands-on laboratory component that make use of Virginia Tech's comprehensive laboratory facilities, funded 15 GATE Fellowships over a five year period; and expanded our program of industry interaction to improve student awareness of challenges and opportunities in the automotive industry. GATE Center graduate students have a state-of-the-art research experience preparing them for a career to contribute to the advancement fuel cell and vehicle technologies.

  2. Gate dielectric degradation: Pre-existing vs. generated defects

    SciTech Connect (OSTI)

    Veksler, Dmitry E-mail: gennadi.bersuker@sematech.org; Bersuker, Gennadi E-mail: gennadi.bersuker@sematech.org

    2014-01-21

    We consider the possibility that degradation of the electrical characteristics of high-k gate stacks under low voltage stresses of practical interest is caused primarily by activation of pre-existing defects rather than generation of new ones. In nFETs in inversion, in particular, defect activation is suggested to be associated with the capture of an injected electron: in this charged state, defects can participate in a fast exchange of charge carriers with the carrier reservoir (substrate or gate electrode) that constitutes the physical process underlying a variety of electrical measurements. The degradation caused by the activation of pre-existing defects, as opposed to that of new defect generation, is both reversible and exhibits a tendency to saturate through the duration of stress. By using the multi-phonon assisted charge transport description, it is demonstrated that the trap activation concept allows reproducing a variety of experimental results including stress time dependency of the threshold voltage, leakage current, charge pumping current, and low frequency noise. Continuous, long-term degradation described by the power law time dependency is shown to be determined by the activation of defects located in the interfacial SiO{sub 2} layer of the high-k gate stacks. The findings of this study can direct process optimization efforts towards reduction of as-grown precursors of the charge trapping defects as the major factor affecting reliability.

  3. Gate valve and motor-operator research findings

    SciTech Connect (OSTI)

    Steele, R. Jr.; DeWall, K.G.; Watkins, J.C.; Russell, M.J.; Bramwell, D.

    1995-09-01

    This report provides an update on the valve research being sponsored by the US Nuclear Regulatory Commission (NRC) and conducted at the Idaho National Engineering Laboratory (INEL). The research addresses the need to provide assurance that motor-operated valves can perform their intended safety function, usually to open or close against specified (design basis) flow and pressure loads. This report describes several important developments: Two methods for estimating or bounding the design basis stem factor (in rising-stem valves), using data from tests less severe than design basis tests; a new correlation for evaluating the opening responses of gate valves and for predicting opening requirements; an extrapolation method that uses the results of a best effort flow test to estimate the design basis closing requirements of a gate valve that exhibits atypical responses (peak force occurs before flow isolation); and the extension of the original INEL closing correlation to include low- flow and low-pressure loads. The report also includes a general approach, presented in step-by-step format, for determining operating margins for rising-stem valves (gate valves and globe valves) as well as quarter-turn valves (ball valves and butterfly valves).

  4. Use of a hard mask for formation of gate and dielectric via nanofilament field emission devices

    DOE Patents [OSTI]

    Morse, Jeffrey D.; Contolini, Robert J.

    2001-01-01

    A process for fabricating a nanofilament field emission device in which a via in a dielectric layer is self-aligned to gate metal via structure located on top of the dielectric layer. By the use of a hard mask layer located on top of the gate metal layer, inert to the etch chemistry for the gate metal layer, and in which a via is formed by the pattern from etched nuclear tracks in a trackable material, a via is formed by the hard mask will eliminate any erosion of the gate metal layer during the dielectric via etch. Also, the hard mask layer will protect the gate metal layer while the gate structure is etched back from the edge of the dielectric via, if such is desired. This method provides more tolerance for the electroplating of a nanofilament in the dielectric via and sharpening of the nanofilament.

  5. PIA - Savannah River Nuclear Solution (SRNS) MedGate Occupational Health

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    and Safety Medical System (OHS) (Includes the Drug and Alcohol Testing System (Assistant)) | Department of Energy MedGate Occupational Health and Safety Medical System (OHS) (Includes the Drug and Alcohol Testing System (Assistant)) PIA - Savannah River Nuclear Solution (SRNS) MedGate Occupational Health and Safety Medical System (OHS) (Includes the Drug and Alcohol Testing System (Assistant)) PIA - Savannah River Nuclear Solution (SRNS) MedGate Occupational Health and Safety Medical System

  6. Technical Feasibility Assessment of LED Roadway Lighting on the Golden Gate

    Office of Scientific and Technical Information (OSTI)

    Bridge (Technical Report) | SciTech Connect Technical Feasibility Assessment of LED Roadway Lighting on the Golden Gate Bridge Citation Details In-Document Search Title: Technical Feasibility Assessment of LED Roadway Lighting on the Golden Gate Bridge Subsequent to preliminary investigations by the Golden Gate Bridge Highway & Transportation District (GGB), in coordination with Pacific Gas & Electric (PG&E), the GATEWAY Demonstration program was asked to evaluate the technical

  7. Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates

    SciTech Connect (OSTI)

    Brennan, Christopher J.; Neumann, Christopher M.; Vitale, Steven A.

    2015-07-28

    Fully depleted silicon-on-insulator transistors were fabricated using two different metal gate deposition mechanisms to compare plasma damage effects on gate oxide quality. Devices fabricated with both plasma-enhanced atomic-layer-deposited (PE-ALD) TiN gates and magnetron plasma sputtered TiN gates showed very good electrostatics and short-channel characteristics. However, the gate oxide quality was markedly better for PE-ALD TiN. A significant reduction in interface state density was inferred from capacitance-voltage measurements as well as a 1200× reduction in gate leakage current. A high-power magnetron plasma source produces a much higher energetic ion and vacuum ultra-violet (VUV) photon flux to the wafer compared to a low-power inductively coupled PE-ALD source. The ion and VUV photons produce defect states in the bulk of the gate oxide as well as at the oxide-silicon interface, causing higher leakage and potential reliability degradation.

  8. Reduction of skin effect losses in double-level-T-gate structure

    SciTech Connect (OSTI)

    Mikulics, M. Hardtdegen, H.; Arango, Y. C.; Adam, R.; Fox, A.; Grützmacher, D.; Gregušová, D.; Novák, J.; Stanček, S.; Kordoš, P.; Sofer, Z.; Juul, L.; Marso, M.

    2014-12-08

    We developed a T-gate technology based on selective wet etching yielding 200 nm wide T-gate structures used for fabrication of High Electron Mobility Transistors (HEMT). Major advantages of our process are the use of only standard photolithographic process and the ability to generate T-gate stacks. A HEMT fabricated on AlGaN/GaN/sapphire with gate length L{sub g} = 200 nm and double-stacked T-gates exhibits 60 GHz cutoff frequency showing ten-fold improvement compared to 6 GHz for the same device with 2 μm gate length. HEMTs with a double-level-T-gate (DLTG) structure exhibit up to 35% improvement of f{sub max} value compared to a single T-gate device. This indicates a significant reduction of skin effect losses in DLTG structure compared to its standard T-gate counterpart. These results agree with the theoretical predictions.

  9. Day Two of 2012 ARPA-E Summit Will Feature Bill Gates, Secretary...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    - Bart Gordon, K&L Gates, Partner; Former Representative from Tennessee Stefan Heck, McKinsey & Co., Director, Leader of Global Cleantech Practice Carrie Houtman, The Dow Chemical...

  10. Sandia Energy - ECIS and i-GATE: Innovation Hub Connects Clean...

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    support system to accelerate the commercialization of innovative technologies related to green transportation and clean energy. There are now eight i-GATE clients developing fuel...

  11. Bill Gates and Deputy Secretary Poneman Discuss the Energy Technology Landscape

    Energy.gov [DOE]

    Bill Gates and Deputy Secretary of Energy Daniel Poneman discuss the future of energy technology during the twenty-second Plenary Meeting of the Nuclear Suppliers Group.

  12. Computer assisted design of poly-silicon gated enhancement-mode...

    Office of Scientific and Technical Information (OSTI)

    design of poly-silicon gated enhancement-mode lateral double quantum dot devices for quantum computing. Citation Details In-Document Search Title: Computer assisted design of ...

  13. Global Access-controlled Transfer e-frame (GATe)

    Energy Science and Technology Software Center (OSTI)

    2012-05-30

    Global Access-controlled Transfer e-frame (GATe) was designed to take advantage of the patterns that occur during an electronic record transfer process. The e-frame (or electronic framework or platform) is the foundation for developing secure information transfer to meet classified and unclassified business processes and is particularly useful when there is a need to share information with various entities in a controlled and secure environment. It can share, search, upload, download and retrieve sensitive information, asmore » well as provides reporting capabilities.« less

  14. Global Access-controlled Transfer e-frame (GATe)

    SciTech Connect (OSTI)

    2012-05-30

    Global Access-controlled Transfer e-frame (GATe) was designed to take advantage of the patterns that occur during an electronic record transfer process. The e-frame (or electronic framework or platform) is the foundation for developing secure information transfer to meet classified and unclassified business processes and is particularly useful when there is a need to share information with various entities in a controlled and secure environment. It can share, search, upload, download and retrieve sensitive information, as well as provides reporting capabilities.

  15. Nonadiabatic molecular orientation by polarization-gated ultrashort laser pulses

    SciTech Connect (OSTI)

    Chen Cheng; Wu Jian; Zeng Heping [State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai 200062 (China)

    2010-09-15

    We show that the nonadiabatic orientation of diatomic polar molecules can be controlled by polarization-gated ultrashort laser pulses. By finely adjusting the time interval between two circularly polarized pulses of different wavelengths but the same helicity, the orientation direction of the molecules can be twirled. A cloverlike potential is created by using two circularly polarized laser pulses of different wavelengths and opposite helicity, leading to multidirectional molecular orientation along the potential wells, which can be well revealed by a high-order statistics metric of <>.

  16. SU-E-J-45: Design and Study of An In-House Respiratory Gating Phantom Platform for Gated Radiotherapy

    SciTech Connect (OSTI)

    Senthilkumar, S

    2014-06-01

    Purpose: The main purpose of this work was to develop an in-house low cost respiratory motion phantom platform for testing the accuracy of the gated radiotherapy system and analyze the dosimetric difference during gated radiotherapy. Methods: An in-house respiratory motion platform(RMP) was designed and constructed for testing the targeting accuracy of respiratory tracking system. The RMP consist of acrylic Chest Wall Platform, 2 DC motors, 4 IR sensors, speed controller circuit, 2 LED and 2 moving rods inside the RMP. The velocity of the movement can be varied from 0 to 30 cycles per minute. The platform mounted to a base using precision linear bearings. The base and platform are made of clear, 15mm thick polycarbonate plastic and the linear ball bearings are oriented to restrict the platform to a movement of approximately 50mm up and down with very little friction. Results: The targeting accuracy of the respiratory tracking system was evaluated using phantom with and without respiratory movement with varied amplitude. We have found the 5% dose difference to the PTV during the movement in comparison with stable PTV. The RMP can perform sinusoidal motion in 1D with fixed peak to peak motion of 5 to 50mm and cycle interval from 2 to 6 seconds. The RMP was designed to be able to simulate the gross anatomical anterior posterior motion attributable to respiration-induced motion of the thoracic region. Conclusion: The unique RMP simulates breathing providing the means to create a comprehensive program for commissioning, training, quality assurance and dose verification of gated radiotherapy treatments. Create the anterior/posterior movement of a target over a 5 to 50 mm distance to replicate tumor movement. The targeting error of the respiratory tracking system is less than 1.0 mm which shows suitable for clinical treatment with highly performance.

  17. Workshop on gate valve pressure locking and thermal binding

    SciTech Connect (OSTI)

    Brown, E.J.

    1995-07-01

    The purpose of the Workshop on Gate Valve Pressure Locking and Thermal Binding was to discuss pressure locking and thermal binding issues that could lead to inoperable gate valves in both boiling water and pressurized water reactors. The goal was to foster exchange of information to develop the technical bases to understand the phenomena, identify the components that are susceptible, discuss actual events, discuss the safety significance, and illustrate known corrective actions that can prevent or limit the occurrence of pressure locking or thermal binding. The presentations were structured to cover U.S. Nuclear Regulatory Commission staff evaluation of operating experience and planned regulatory activity; industry discussions of specific events, including foreign experience, and efforts to determine causes and alleviate the affects; and valve vendor experience and recommended corrective action. The discussions indicated that identifying valves susceptible to pressure locking and thermal binding was a complex process involving knowledge of components, systems, and plant operations. The corrective action options are varied and straightforward.

  18. Gated frequency-resolved optical imaging with an optical parametric amplifier

    DOE Patents [OSTI]

    Cameron, S.M.; Bliss, D.E.; Kimmel, M.W.; Neal, D.R.

    1999-08-10

    A system for detecting objects in a turbid media utilizes an optical parametric amplifier as an amplifying gate for received light from the media. An optical gating pulse from a second parametric amplifier permits the system to respond to and amplify only ballistic photons from the object in the media. 13 figs.

  19. Gated frequency-resolved optical imaging with an optical parametric amplifier

    DOE Patents [OSTI]

    Cameron, Stewart M.; Bliss, David E.; Kimmel, Mark W.; Neal, Daniel R.

    1999-01-01

    A system for detecting objects in a turbid media utilizes an optical parametric amplifier as an amplifying gate for received light from the media. An optical gating pulse from a second parametric amplifier permits the system to respond to and amplify only ballistic photons from the object in the media.

  20. Coherent molecular transistor: Control through variation of the gate wave function

    SciTech Connect (OSTI)

    Ernzerhof, Matthias

    2014-03-21

    In quantum interference transistors (QUITs), the current through the device is controlled by variation of the gate component of the wave function that interferes with the wave function component joining the source and the sink. Initially, mesoscopic QUITs have been studied and more recently, QUITs at the molecular scale have been proposed and implemented. Typically, in these devices the gate lead is subjected to externally adjustable physical parameters that permit interference control through modifications of the gate wave function. Here, we present an alternative model of a molecular QUIT in which the gate wave function is directly considered as a variable and the transistor operation is discussed in terms of this variable. This implies that we specify the gate current as well as the phase of the gate wave function component and calculate the resulting current through the source-sink channel. Thus, we extend on prior works that focus on the phase of the gate wave function component as a control parameter while having zero or certain discrete values of the current. We address a large class of systems, including finite graphene flakes, and obtain analytic solutions for how the gate wave function controls the transistor.

  1. A proposal for the realization of universal quantum gates via superconducting qubits inside a cavity

    SciTech Connect (OSTI)

    Obada, A.-S.F.; Hessian, H.A.; Mohamed, A.-B.A.; Community College, Salman Bin Abdulaziz University, Al-Aflaj ; Homid, Ali H.

    2013-07-15

    A family of quantum logic gates is proposed via superconducting (SC) qubits coupled to a SC-cavity. The Hamiltonian for SC-charge qubits inside a single mode cavity is considered. Three- and two-qubit operations are generated by applying a classical magnetic field with the flux. Therefore, a number of quantum logic gates are realized. Numerical simulations and calculation of the fidelity are used to prove the success of these operations for these gates. -- Highlights: A family of quantum logic gates is proposed via SC-qubits coupled to a cavity. Three- and two-qubit operations are generated via a classical field with the flux. Numerical simulations and calculation of the fidelity are used to prove the success of these operations for these gates.

  2. Gas-controlled dynamic vacuum insulation with gas gate

    DOE Patents [OSTI]

    Benson, David K.; Potter, Thomas F.

    1994-06-07

    Disclosed is a dynamic vacuum insulation comprising sidewalls enclosing an evacuated chamber and gas control means for releasing hydrogen gas into a chamber to increase gas molecule conduction of heat across the chamber and retrieving hydrogen gas from the chamber. The gas control means includes a metal hydride that absorbs and retains hydrogen gas at cooler temperatures and releases hydrogen gas at hotter temperatures; a hydride heating means for selectively heating the metal hydride to temperatures high enough to release hydrogen gas from the metal hydride; and gate means positioned between the metal hydride and the chamber for selectively allowing hydrogen to flow or not to flow between said metal hydride and said chamber.

  3. Gas-controlled dynamic vacuum insulation with gas gate

    DOE Patents [OSTI]

    Benson, D.K.; Potter, T.F.

    1994-06-07

    Disclosed is a dynamic vacuum insulation comprising sidewalls enclosing an evacuated chamber and gas control means for releasing hydrogen gas into a chamber to increase gas molecule conduction of heat across the chamber and retrieving hydrogen gas from the chamber. The gas control means includes a metal hydride that absorbs and retains hydrogen gas at cooler temperatures and releases hydrogen gas at hotter temperatures; a hydride heating means for selectively heating the metal hydride to temperatures high enough to release hydrogen gas from the metal hydride; and gate means positioned between the metal hydride and the chamber for selectively allowing hydrogen to flow or not to flow between said metal hydride and said chamber. 25 figs.

  4. Gate Drive For High Speed, High Power IGBTs

    SciTech Connect (OSTI)

    Nguyen, M.N.; Cassel, R.L.; de Lamare, J.E.; Pappas, G.C.; /SLAC

    2007-06-18

    A new gate drive for high-voltage, high-power IGBTs has been developed for the SLAC NLC (Next Linear Collider) Solid State Induction Modulator. This paper describes the design and implementation of a driver that allows an IGBT module rated at 800A/3300V to switch up to 3000A at 2200V in 3{micro}S with a rate of current rise of more than 10000A/{micro}S, while still being short circuit protected. Issues regarding fast turn on, high de-saturation voltage detection, and low short circuit peak current will be presented. A novel approach is also used to counter the effect of unequal current sharing between parallel chips inside most high-power IGBT modules. It effectively reduces the collector-emitter peak current, and thus protects the IGBT from being destroyed during soft short circuit conditions at high di/dt.

  5. Quantum gates controlled by spin chain soliton excitations

    SciTech Connect (OSTI)

    Cuccoli, Alessandro; Nuzzi, Davide; Vaia, Ruggero; Verrucchi, Paola

    2014-05-07

    Propagation of soliton-like excitations along spin chains has been proposed as a possible way for transmitting both classical and quantum information between two distant parties with negligible dispersion and dissipation. In this work, a somewhat different use of solitons is considered. Solitons propagating along a spin chain realize an effective magnetic field, well localized in space and time, which can be exploited as a means to manipulate the state of an external spin (i.e., a qubit) that is weakly coupled to the chain. We have investigated different couplings between the qubit and the chain, as well as different soliton shapes, according to a Heisenberg chain model. It is found that symmetry properties strongly affect the effectiveness of the proposed scheme, and the most suitable setups for implementing single qubit quantum gates are singled out.

  6. Methods for determining atypical gate valve thrust requirements

    SciTech Connect (OSTI)

    Steele, R. Jr.; Watkins, J.C.; DeWall, K.G.

    1995-04-01

    Evaluating the performance of rising stem, wedge type, gate valves used in nuclear power plant is not a problem when the valves can be design-basis tested and their operability margins determined diagnostically. The problem occurs when they cannot be tested because of plant system limitations or when they can be tested only at some less-than-design-basis condition. To evaluate the performance of these valves requires various analytical and/or extrapolation methods by which the design-basis stem thrust requirement can be determined. This has been typically accomplished with valve stem thrust models used to calculate the requirements or by extrapolating the results from a less-than-design-basis test. The stem thrust models used by the nuclear industry to determine the opening or closing stem thrust requirements for these gate valves have generally assumed that the highest load the valve experiences during closure (but before seating) is at flow isolation and during unwedging or before flow initiation in the opening direction. However, during full-scale valve testing conducted for the USNRC, several of the valves produced stem thrust histories that showed peak closing stem forces occurring before flow isolation in the closing direction and after flow initiation in the opening direction. All of the valves that exhibited this behavior in the closing direction also showed signs of internal damage. Initially, we dismissed the early peak in the closing stem thrust requirement as damage-induced and labeled it nonpredictable behavior. Opening responses were not a priority in our early research, so that phenomenon was set aside for later evaluation.

  7. Gate controlled electronic transport in monolayer MoS{sub 2} field effect transistor

    SciTech Connect (OSTI)

    Zhou, Y. F.; Wang, B.; Yu, Y. J.; Wei, Y. D. E-mail: jianwang@hku.hk; Xian, H. M.; Wang, J. E-mail: jianwang@hku.hk

    2015-03-14

    The electronic spin and valley transport properties of a monolayer MoS{sub 2} are investigated using the non-equilibrium Green's function formalism combined with density functional theory. Due to the presence of strong Rashba spin orbit interaction (RSOI), the electronic valence bands of monolayer MoS{sub 2} are split into spin up and spin down Zeeman-like texture near the two inequivalent vertices K and K′ of the first Brillouin zone. When the gate voltage is applied in the scattering region, an additional strong RSOI is induced which generates an effective magnetic field. As a result, electron spin precession occurs along the effective magnetic field, which is controlled by the gate voltage. This, in turn, causes the oscillation of conductance as a function of the magnitude of the gate voltage and the length of the gate region. This current modulation due to the spin precession shows the essential feature of the long sought Datta-Das field effect transistor (FET). From our results, the oscillation periods for the gate voltage and gate length are found to be approximately 2.2 V and 20.03a{sub B} (a{sub B} is Bohr radius), respectively. These observations can be understood by a simple spin precessing model and indicate that the electron behaviors in monolayer MoS{sub 2} FET are both spin and valley related and can easily be controlled by the gate.

  8. Organic field-effect transistor nonvolatile memories utilizing sputtered C nanoparticles as nano-floating-gate

    SciTech Connect (OSTI)

    Liu, Jie; Liu, Chang-Hai; She, Xiao-Jian; Sun, Qi-Jun; Gao, Xu; Wang, Sui-Dong

    2014-10-20

    High-performance organic field-effect transistor nonvolatile memories have been achieved using sputtered C nanoparticles as the nano-floating-gate. The sputtered C nano-floating-gate is prepared with low-cost material and simple process, forming uniform and discrete charge trapping sites covered by a smooth and complete polystyrene layer. The devices show large memory window, excellent retention capability, and programming/reading/erasing/reading endurance. The sputtered C nano-floating-gate can effectively trap both holes and electrons, and it is demonstrated to be suitable for not only p-type but also n-type organic field-effect transistor nonvolatile memories.

  9. The Gated X-ray Detector for the National Ignition Facility

    SciTech Connect (OSTI)

    Oertel, J A; Barnes, C; Archuleta, T; Casper, L; Fatherley, V; Heinrichs, T; King, R; Landers, D; Lopez, F; Sanchez, P; Sandoval, G; Schrank, L; Walsh, P; Bell, P; Brown, M; Costa, R; Holder, J; Montalongo, S; Pederson, N

    2006-05-18

    Two new gated x-ray imaging cameras have recently been designed, constructed and delivered to the National Ignition Facility in Livermore, CA. These Gated X-ray Detectors are each designed to fit within an aluminum airbox with a large capacity cooling plane and are fitted with an array of environmental housekeeping sensors. These instruments are significant different from earlier generations of gated x-ray images due in parts to an innovative impendence matching scheme, advanced phosphor screens, pulsed phosphor circuits, precision assembly fixturing, unique system monitoring and complete remote computer control. Preliminary characterization has shown repeatable uniformity between imaging strips, improved spatial resolution and no detectable impendence reflections.

  10. Design of a spin-wave majority gate employing mode selection

    SciTech Connect (OSTI)

    Klingler, S. Pirro, P.; Brcher, T.; Leven, B.; Hillebrands, B.; Chumak, A. V.

    2014-10-13

    The design of a microstructured, fully functional spin-wave majority gate is presented and studied using micromagnetic simulations. This all-magnon logic gate consists of three-input waveguides, a spin-wave combiner, and an output waveguide. In order to ensure the functionality of the device, the output waveguide is designed to perform spin-wave mode selection. We demonstrate that the gate evaluates the majority of the input signals coded into the spin-wave phase. Moreover, the all-magnon data processing device is used to perform logic AND-, OR-, NAND-, and NOR- operations.

  11. VIDEO: Bill Gates and Secretary Chu Chat on the Future of Energy |

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Department of Energy Bill Gates and Secretary Chu Chat on the Future of Energy VIDEO: Bill Gates and Secretary Chu Chat on the Future of Energy March 5, 2012 - 1:24pm Addthis Secretary Chu sits down with Microsoft Founder and Chairman Bill Gates at the 2012 ARPA-E Energy Innovation Summit. April Saylor April Saylor Former Digital Outreach Strategist, Office of Public Affairs Last week, attendees at the 2012 ARPA-E Energy Innovation Summit heard from a variety of leaders from across the

  12. Hazardous waste dislodging and conveyance: The confined sluicing method

    SciTech Connect (OSTI)

    Summers, D.A.; Fossey, R.D.; Mann, M.D.; Blaine, J.G. [Univ. of Missouri, Rolla, MO (United States). High Pressure Waterjet Lab.; Rinker, M.W. [Pacific Northwest Lab., Richland, WA (United States)

    1994-09-01

    This report describes an investigation of a means for dislodging and conveying waste currently stored in underground storage tanks. A series of experiments have been carried out to evaluate the potential of a medium pressure, medium flow rate cutting system as a means of dislodging the waste. It has been found that waterjets at a pressure of 10,000 psi can effectively cut the material which has been chosen to simulate the hardened saltcake within the storage tanks. Based on a parameterization test it has thus been calculated that an inlet flow volume of approximately 30 gallons per minute will be sufficient to excavate 30 gallons per minute of waste from a tank. In order to transport the resulting slurry from the tank, a modified jet pump has been developed and has demonstrated its capability of conveying fluid and waste particles, up to one inch in diameter, to a height of more than 60 feet. Experiments were conducted to examine different configurations to achieve the production levels required for waste removal and to clean the walls of residual material. It was found more effective to clean the walls using an inclined angle of impact rather than a perpendicular angle of impact in order to provide a safeguard against driving the water through any cracks in the containment. It was demonstrated that excavation can take place with almost total immediate extraction of the water and debris from the cutting process. The results have qualitatively shown the potential of a medium pressure waterjet system for achieving the required results for underground storage tank waste retrieval.

  13. Vehicle Technologies Office Merit Review 2015: GATE Center for Electric Drive Transportation

    Energy.gov [DOE]

    Presentation given by Regents University of Michigan at 2015 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about GATE Center...

  14. Formation of strain-induced quantum dots in gated semiconductor nanostructures

    SciTech Connect (OSTI)

    Thorbeck, Ted; Zimmerman, Neil M.

    2015-08-15

    A long-standing mystery in the field of semiconductor quantum dots (QDs) is: Why are there so many unintentional dots (also known as disorder dots) which are neither expected nor controllable. It is typically assumed that these unintentional dots are due to charged defects, however the frequency and predictability of the location of the unintentional QDs suggests there might be additional mechanisms causing the unintentional QDs besides charged defects. We show that the typical strains in a semiconductor nanostructure from metal gates are large enough to create strain-induced quantum dots. We simulate a commonly used QD device architecture, metal gates on bulk silicon, and show the formation of strain-induced QDs. The strain-induced QD can be eliminated by replacing the metal gates with poly-silicon gates. Thus strain can be as important as electrostatics to QD device operation operation.

  15. Vehicle Technologies Office Merit Review 2014: DOE GATE Center of Excellence in Sustainable Vehicle Systems

    Energy.gov [DOE]

    Presentation given by Clemson University at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about DOE GATE Center of...

  16. Multi-images deconvolution improves signal-to-noise ratio on gated stimulated emission depletion microscopy

    SciTech Connect (OSTI)

    Castello, Marco; Diaspro, Alberto; Vicidomini, Giuseppe

    2014-12-08

    Time-gated detection, namely, only collecting the fluorescence photons after a time-delay from the excitation events, reduces complexity, cost, and illumination intensity of a stimulated emission depletion (STED) microscope. In the gated continuous-wave- (CW-) STED implementation, the spatial resolution improves with increased time-delay, but the signal-to-noise ratio (SNR) reduces. Thus, in sub-optimal conditions, such as a low photon-budget regime, the SNR reduction can cancel-out the expected gain in resolution. Here, we propose a method which does not discard photons, but instead collects all the photons in different time-gates and recombines them through a multi-image deconvolution. Our results, obtained on simulated and experimental data, show that the SNR of the restored image improves relative to the gated image, thereby improving the effective resolution.

  17. Three dimensional time-gated tracking of non-blinking quantum...

    Office of Scientific and Technical Information (OSTI)

    As a result, signal-to-noise is improved in the cellular milieu through the use of pulsed excitation and time-gated detection. Authors: DeVore, Matthew S. 1 ; Werner, James H. ...

  18. Vehicle Technologies Office Merit Review 2015: GATE Center of Excellence in Sustainable Vehicle Systems

    Office of Energy Efficiency and Renewable Energy (EERE)

    Presentation given by Clemson University at 2015 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about GATE center of excellence...

  19. Vehicle Technologies Office Merit Review 2014: GATE: Energy Efficient Vehicles for Sustainable Mobility

    Office of Energy Efficiency and Renewable Energy (EERE)

    Presentation given by Ohio State University at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about GATE: energy efficient...

  20. Vehicle Technologies Office Merit Review 2015: GATE: Energy Efficient Vehicles for Sustainable Mobility

    Office of Energy Efficiency and Renewable Energy (EERE)

    Presentation given by The Ohio State University at 2015 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about GATE: energy...

  1. Vehicle Technologies Office Merit Review 2015: Gate Driver Optimization for WBG Applications

    Energy.gov [DOE]

    Presentation given by Oak Ridge National Laboratory at 2015 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about gate driver...

  2. Gate-tunable exchange coupling between cobalt clusters on graphene (Journal

    Office of Scientific and Technical Information (OSTI)

    Article) | DOE PAGES Gate-tunable exchange coupling between cobalt clusters on graphene Title: Gate-tunable exchange coupling between cobalt clusters on graphene Authors: Chen, Hua ; Niu, Qian ; Zhang, Zhenyu ; MacDonald, Allan H. Publication Date: 2013-04-10 OSTI Identifier: 1104471 Type: Publisher's Accepted Manuscript Journal Name: Physical Review B Additional Journal Information: Journal Volume: 87; Journal Issue: 14; Journal ID: ISSN 1098-0121 Publisher: American Physical Society

  3. Effects of pressure and temperature on gate valve unwedging

    SciTech Connect (OSTI)

    Damerell, P.S.; Harrison, D.H.; Hayes, P.W.; Simons, J.W.; Walker, T.A.

    1996-12-01

    The stem thrust required to unwedge a gate valve is influenced by the pressure and temperature when the valve is closed and by the changes in these conditions between closure and opening. {open_quotes}Pressure locking{close_quotes} and {open_quotes}thermal binding{close_quotes} refer to situations where pressure and temperature effects cause the unwedging load to be much higher than normal. A model of these phenomena has been developed. Wedging (closure) is modeled as developing an {open_quotes}interference{close_quotes} between the disk and its seat rings in the valve. The effects of pressure and temperature are analyzed to determine the change in this disk-to-seat {open_quotes}interference{close_quotes}. Flexibilities, of the disk, body, stem and yoke strongly influence the unwedging thrust. Calculations and limited comparisons to data have been performed for a range of valve designs and scenarios. Pressure changes can increase the unwedging load when there is either a uniform pressure decrease, or a situation where the bonnet pressure exceeds the pressures in the adjacent piping. Temperature changes can increase the unwedging load when: (1) valve closure at elevated system temperature produces a delayed stem expansion, (2) a temperature increase after closure produces a bonnet pressure increase, or (3) a temperature change after closure produces an increase in the disk-to-seat {open_quotes}interference{close_quotes} or disk-to-seat friction.

  4. Range-gated imaging for near-field target identification

    SciTech Connect (OSTI)

    Yates, G.J.; Gallegos, R.A.; McDonald, T.E.

    1996-12-01

    The combination of two complementary technologies developed independently at Los Alamos National Laboratory (LANL) and Sandia National Laboratory (SNL) has demonstrated feasibility of target detection and image capture in a highly light-scattering, medium. The technique uses a compact SNL developed Photoconductive Semiconductor Switch/Laser Diode Array (PCSS/LDA) for short-range (distances of 8 to 10 m) large Field-Of-View (FOV) target illumination. Generation of a time-correlated echo signal is accomplished using a photodiode. The return image signal is recorded with a high-speed shuttered Micro-Channel-Plate Image Intensifier (MCPII), declined by LANL and manufactured by Philips Photonics. The MCPII is rated using a high-frequency impedance-matching microstrip design to produce 150 to 200 ps duration optical exposures. The ultra first shuttering producer depth resolution of a few inches along the optic axis between the MCPII and the target, producing enhanced target images effectively deconvolved from noise components from the scattering medium in the FOV. The images from the MCPII are recorded with an RS-170 Charge-Coupled-Device camera and a Big Sky, Beam Code, PC-based digitizer frame grabber and analysis package. Laser pulse data were obtained by the but jitter problems and spectral mismatches between diode spectral emission wavelength and MCPII photocathode spectral sensitivity prevented the capture of fast gating imaging with this demonstration system. Continued development of the system is underway.

  5. Two-Input Enzymatic Logic Gates Made Sigmoid by Modifications of the Biocatalytic Reaction Cascades

    SciTech Connect (OSTI)

    Zavalov, Oleksandr; Bocharova, Vera; Halamek, Jan; Halamkova, Lenka; Korkmaz, Sevim; Arugula, Mary; Chinnapareddy, Soujanya; Katz, Evgeny; Privman, Vladimir

    2012-01-01

    Computing based on biochemical processes is a newest rapidly developing field of unconventional information and signal processing. In this paper we present results of our research in the field of biochemical computing and summarize the obtained numerical and experimental data for implementations of the standard two-input OR and AND gates with double-sigmoid shape of the output signal. This form of response was obtained as a function of the two inputs in each of the realized biochemical systems. The enzymatic gate processes in the first system were activated with two chemical inputs and resulted in optically detected chromogen oxidation, which happens when either one or both of the inputs are present. In this case, the biochemical system is functioning as the OR gate. We demonstrate that the addition of a filtering biocatalytic process leads to a considerable reduction of the noise transmission factor and the resulting gate response has sigmoid shape in both inputs. The second system was developed for functioning as an AND gate, where the output signal was activated only by a simultaneous action of two enzymatic biomarkers. This response can be used as an indicator of liver damage, but only if both of these of the inputs are present at their elevated, pathophysiological values of concentrations. A kinetic numerical model was developed and used to estimate the range of parameters for which the experimentally realized logic gate is close to optimal. We also analyzed the system to evaluate its noise-handling properties.

  6. Purely electronic mechanism of electrolyte gating of indium tin oxide thin films

    DOE PAGES-Beta [OSTI]

    Leng, X.; Bozovic, I.; Bollinger, A. T.

    2016-08-10

    Epitaxial indium tin oxide films have been grown on both LaAlO3 and yttria-stabilized zirconia substrates using RF magnetron sputtering. Electrolyte gating causes a large change in the film resistance that occurs immediately after the gate voltage is applied, and shows no hysteresis during the charging/discharging processes. When two devices are patterned next to one another and the first one gated through an electrolyte, the second one shows no changes in conductance, in contrast to what happens in materials (like tungsten oxide) susceptible to ionic electromigration and intercalation. These findings indicate that electrolyte gating in indium tin oxide triggers a puremore » electronic process (electron depletion or accumulation, depending on the polarity of the gate voltage), with no electrochemical reactions involved. Electron accumulation occurs in a very thin layer near the film surface, which becomes highly conductive. These results contribute to our understanding of the electrolyte gating mechanism in complex oxides and may be relevant for applications of electric double layer transistor devices.« less

  7. Theory of signal and noise in double-gated nanoscale electronic pH sensors

    SciTech Connect (OSTI)

    Go, Jonghyun; Nair, Pradeep R.; Alam, Muhammad A.

    2012-08-01

    The maximum sensitivity of classical nanowire (NW)-based pH sensors is defined by the Nernst limit of 59 mV/pH. For typical noise levels in ultra-small single-gated nanowire sensors, the signal-to-noise ratio is often not sufficient to resolve pH changes necessary for a broad range of applications. Recently, a new class of double-gated devices was demonstrated to offer apparent 'super-Nernstian' response (>59 mV/pH) by amplifying the original pH signal through innovative biasing schemes. However, the pH-sensitivity of these nanoscale devices as a function of biasing configurations, number of electrodes, and signal-to-noise ratio (SNR) remains poorly understood. Even the basic question such as 'Do double-gated sensors actually resolve smaller changes in pH compared to conventional single-gated sensors in the presence of various sources of noise?' remains unanswered. In this article, we provide a comprehensive numerical and analytical theory of signal and noise of double-gated pH sensors to conclude that, while the theoretical lower limit of pH-resolution does not improve for double-gated sensors, this new class of sensors does improve the (instrument-limited) pH resolution.

  8. GATE Center of Excellence at UAB in Lightweight Materials for Automotive Applications

    SciTech Connect (OSTI)

    2011-07-31

    This report summarizes the accomplishments of the UAB GATE Center of Excellence in Lightweight Materials for Automotive Applications. The first Phase of the UAB DOE GATE center spanned the period 2005-2011. The UAB GATE goals coordinated with the overall goals of DOE's FreedomCAR and Vehicles Technologies initiative and DOE GATE program. The FCVT goals are: (1) Development and validation of advanced materials and manufacturing technologies to significantly reduce automotive vehicle body and chassis weight without compromising other attributes such as safety, performance, recyclability, and cost; (2) To provide a new generation of engineers and scientists with knowledge and skills in advanced automotive technologies. The UAB GATE focused on both the FCVT and GATE goals in the following manner: (1) Train and produce graduates in lightweight automotive materials technologies; (2) Structure the engineering curricula to produce specialists in the automotive area; (3) Leverage automotive related industry in the State of Alabama; (4) Expose minority students to advanced technologies early in their career; (5) Develop innovative virtual classroom capabilities tied to real manufacturing operations; and (6) Integrate synergistic, multi-departmental activities to produce new product and manufacturing technologies for more damage tolerant, cost-effective, and lighter automotive structures.

  9. SU-C-204-06: Surface Imaging for the Set-Up of Proton Post-Mastectomy Chestwall Irradiation: Gated Images Vs Non Gated Images

    SciTech Connect (OSTI)

    Batin, E; Depauw, N; MacDonald, S; Lu, H

    2015-06-15

    Purpose: Historically, the set-up for proton post-mastectomy chestwall irradiation at our institution started with positioning the patient using tattoos and lasers. One or more rounds of orthogonal X-rays at gantry 0° and beamline X-ray at treatment gantry angle were then taken to finalize the set-up position. As chestwall targets are shallow and superficial, surface imaging is a promising tool for set-up and needs to be investigated Methods: The orthogonal imaging was entirely replaced by AlignRT™ (ART) images. The beamline X-Ray image is kept as a confirmation, based primarily on three opaque markers placed on skin surface instead of bony anatomy. In the first phase of the process, ART gated images were used to set-up the patient and the same specific point of the breathing curve was used every day. The moves (translations and rotations) computed for each point of the breathing curve during the first five fractions were analyzed for ten patients. During a second phase of the study, ART gated images were replaced by ART non-gated images combined with real-time monitoring. In both cases, ART images were acquired just before treatment to access the patient position compare to the non-gated CT. Results: The average difference between the maximum move and the minimum move depending on the chosen breathing curve point was less than 1.7 mm for all translations and less than 0.7° for all rotations. The average position discrepancy over the course of treatment obtained by ART non gated images combined to real-time monitoring taken before treatment to the planning CT were smaller than the average position discrepancy obtained using ART gated images. The X-Ray validation images show similar results with both ART imaging process. Conclusion: The use of ART non gated images combined with real time imaging allows positioning post-mastectomy chestwall patients in less than 3 mm / 1°.

  10. Charge noise analysis of metal oxide semiconductor dual-gate Si/SiGe quantum point contacts

    SciTech Connect (OSTI)

    Kamioka, J.; Oda, S.; Kodera, T.; Takeda, K.; Obata, T.; Tarucha, S.

    2014-05-28

    The frequency dependence of conductance noise through a gate-defined quantum point contact fabricated on a Si/SiGe modulation doped wafer is characterized. The 1/f{sup 2} noise, which is characteristic of random telegraph noise, is reduced by application of a negative bias on the global top gate to reduce the local gate voltage. Direct leakage from the large global gate voltage also causes random telegraph noise, and therefore, there is a suitable point to operate quantum dot measurement.

  11. Bedrock refractive-flow cells: A passive treatment analog to funnel-and-gate

    SciTech Connect (OSTI)

    Dick, V.; Edwards, D.

    1997-12-31

    Funnel-and-gate technology provides a mechanism to passively treat groundwater contaminant plumes, but depends on placement of a sufficient barrier ({open_quotes}funnel{close_quotes}) in the plume flow path to channel the plume to a pass-through treatment zone ({open_quotes}gate{close_quotes}). Conventional barrier technologies limit funnel-and-gate deployment to unconsolidated overburden applications. A method has been developed which allows similar passive treatment to be applied to bedrock plumes. Rather than use barriers as the funnel, the method uses engineered bedrock zones, installed via precision blasting or other means, to refract groundwater flow along a preferred path to treatment (gate). The method requires orienting the refractive cell based on the Tangent Law and extending refractive cell limbs down gradient of the gate to disperse head and control flow. A typical Refractive-Flow cell may be{open_quotes}Y{close_quotes}shaped, with each limb 3-10 ft [1-3 m] wide and several tens to a few hundred feet [10 - 100 m] in length. Treatment takes place at the center of the X. MODFLOW modeling has been used to successfully simulate desired flow. Engineered blasting has been used at full scale application to create bedrock rubble zones for active collection/flow control for several years. The method provides a previously unavailable method to passively treat contaminated groundwater in bedrock at low cost.

  12. Water gate array for current flow or tidal movement pneumatic harnessing system

    DOE Patents [OSTI]

    Gorlov, Alexander M.

    1991-01-01

    The invention, which provides a system for harnessing power from current flow or tidal movement in a body of water, comprises first and second hydro-pneumatic chambers each having ingress and egress below the water surface near the river or ocean floor and water gates operative to open or seal the ports to the passage of water. In an exemplary embodiment, the gates are sychronized by shafts so that the ingress ports of each chamber are connected to the egress ports of each other chamber. Thus, one set of gates is closed, while the other is open, thereby allowing water to flow into one chamber and build air pressure therein and allowing water to flow out of the other chamber and create a partial vacuum therein. A pipe connects the chambers, and an air turbine harnesses the air movement within the pipe. When water levels are equilibrated, the open set of gates is closed by a counterweight, and the other set is allowed to open by natural force of the water differential. The water gates may be comprised of a plurality of louvers which are ganged for simultaneous opening and closing. The system is designed to operate with air turbines or other pneumatic devices. Its design minimizes construction cost and environmental impact, yet provides a clean renewable energy source.

  13. UC Davis Fuel Cell, Hydrogen, and Hybrid Vehicle (FCH2V) GATE Center of Excellence

    SciTech Connect (OSTI)

    Erickson, Paul

    2012-05-31

    This is the final report of the UC Davis Fuel Cell, Hydrogen, and Hybrid Vehicle (FCH2V) GATE Center of Excellence which spanned from 2005-2012. The U.S. Department of Energy (DOE) established the Graduate Automotive Technology Education (GATE) Program, to provide a new generation of engineers and scientists with knowledge and skills to create advanced automotive technologies. The UC Davis Fuel Cell, Hydrogen, and Hybrid Vehicle (FCH2V) GATE Center of Excellence established in 2005 is focused on research, education, industrial collaboration and outreach within automotive technology. UC Davis has had two independent GATE centers with separate well-defined objectives and research programs from 1998. The Fuel Cell Center, administered by ITS-Davis, has focused on fuel cell technology. The Hybrid-Electric Vehicle Design Center (HEV Center), administered by the Department of Mechanical and Aeronautical Engineering, has focused on the development of plug-in hybrid technology using internal combustion engines. The merger of these two centers in 2005 has broadened the scope of research and lead to higher visibility of the activity. UC Davis's existing GATE centers have become the campus's research focal points on fuel cells and hybrid-electric vehicles, and the home for graduate students who are studying advanced automotive technologies. The centers have been highly successful in attracting, training, and placing top-notch students into fuel cell and hybrid programs in both industry and government.

  14. Suppression of low-frequency charge noise in gates-defined GaAs quantum dots

    SciTech Connect (OSTI)

    You, Jie; Li, Hai-Ou E-mail: gpguo@ustc.edu.cn; Wang, Ke; Cao, Gang; Song, Xiang-Xiang; Xiao, Ming; Guo, Guo-Ping E-mail: gpguo@ustc.edu.cn

    2015-12-07

    To reduce the charge noise of a modulation-doped GaAs/AlGaAs quantum dot, we have fabricated shallow-etched GaAs/AlGaAs quantum dots using the wet-etching method to study the effects of two-dimensional electron gas (2DEG) underneath the metallic gates. The low-frequency 1/f noise in the Coulomb blockade region of the shallow-etched quantum dot is compared with a non-etched quantum dot on the same wafer. The average values of the gate noise are approximately 0.5 μeV in the shallow-etched quantum dot and 3 μeV in the regular quantum dot. Our results show the quantum dot low-frequency charge noise can be suppressed by the removal of the 2DEG underneath the metallic gates, which provides an architecture for noise reduction.

  15. A hydrogel capsule as gate dielectric in flexible organic field-effect transistors

    SciTech Connect (OSTI)

    Dumitru, L. M.; Manoli, K.; Magliulo, M.; Torsi, L.; Ligonzo, T.; Palazzo, G.

    2015-01-01

    A jellified alginate based capsule serves as biocompatible and biodegradable electrolyte system to gate an organic field-effect transistor fabricated on a flexible substrate. Such a system allows operating thiophene based polymer transistors below 0.5 V through an electrical double layer formed across an ion-permeable polymeric electrolyte. Moreover, biological macro-molecules such as glucose-oxidase and streptavidin can enter into the gating capsules that serve also as delivery system. An enzymatic bio-reaction is shown to take place in the capsule and preliminary results on the measurement of the electronic responses promise for low-cost, low-power, flexible electronic bio-sensing applications using capsule-gated organic field-effect transistors.

  16. Optical imaging through turbid media with a degenerate four-wave mixing correlation time gate

    DOE Patents [OSTI]

    Sappey, Andrew D.

    1998-04-14

    Optical imaging through turbid media is demonstrated using a degenerate four-wave mixing correlation time gate. An apparatus and method for detecting ballistic and/or snake light while rejecting unwanted diffusive light for imaging structures within highly scattering media are described. Degenerate four-wave mixing (DFWM) of a doubled YAG laser in rhodamine 590 is used to provide an ultrafast correlation time gate to discriminate against light that has undergone multiple scattering and therefore has lost memory of the structures within the scattering medium. Images have been obtained of a test cross-hair pattern through highly turbid suspensions of whole milk in water that are opaque to the naked eye, which demonstrates the utility of DFWM for imaging through turbid media. Use of DFWM as an ultrafast time gate for the detection of ballistic and/or snake light in optical mammography is discussed.

  17. Liquid-based gating mechanism with tunable multiphase selectivity and antifouling behaviour

    SciTech Connect (OSTI)

    Hou, X; Hu, YH; Grinthal, A; Khan, M; Aizenberg, J

    2015-03-04

    Living organisms make extensive use of micro- and nanometre-sized pores as gatekeepers for controlling the movement of fluids, vapours and solids between complex environments. The ability of such pores to coordinate multiphase transport, in a highly selective and subtly triggered fashion and without clogging, has inspired interest in synthetic gated pores for applications ranging from fluid processing to 3D printing and lab-on-chip systems(1-10). But although specific gating and transport behaviours have been realized by precisely tailoring pore surface chemistries and pore geometries(6,11-17), a single system capable of controlling complex, selective multiphase transport has remained a distant prospect, and fouling is nearly inevitable(11,12). Here we introduce a gating mechanism that uses a capillary-stabilized liquid as a reversible, reconfigurable gate that fills and seals pores in the closed state, and creates a non-fouling, liquid-lined pore in the open state. Theoretical modelling and experiments demonstrate that for each transport substance, the gating threshold-the pressure needed to open the pores-can be rationally tuned over a wide pressure range. This enables us to realize in one system differential response profiles for a variety of liquids and gases, even letting liquids flow through the pore while preventing gas from escaping. These capabilities allow us to dynamically modulate gas-liquid sorting in a microfluidic flow and to separate a three-phase air-water-oil mixture, with the liquid lining ensuring sustained antifouling behaviour. Because the liquid gating strategy enables efficient long-term operation and can be applied to a variety of pore structures and membrane materials, and to micro- as well as macroscale fluid systems, we expect it to prove useful in a wide range of applications.

  18. Liquid-based gating mechanism with tunable multiphase selectivity and antifouling behaviour

    DOE PAGES-Beta [OSTI]

    Hou, Xu; Hu, Yuhang; Grinthal, Alison; Khan, Mughees; Aizenberg, Joanna

    2015-03-04

    Living organisms make extensive use of micro- and nanometre-sized pores as gatekeepers for controlling the movement of fluids, vapours and solids between complex environments. In addition, the ability of such pores to coordinate multiphase transport, in a highly selective and subtly triggered fashion and without clogging, has inspired interest in synthetic gated pores for applications ranging from fluid processing to 3D printing and lab-on-chip systems1-10.But although specific gating and transport behaviours have been realized by precisely tailoring pore surface chemistries and pore geometries6,11–17, a single system capable of controlling complex, selective multiphase transport has remained a distant prospect, and foulingmore » is nearly inevitable.Here we introduce a gating mechanism that uses a capillary-stabilized liquid as a reversible, reconfigurable gate that fills and seals pores in the closed state, and creates a non-fouling, liquid-lined pore in the open state.Theoretical modelling and experiments demonstrate that for each transport substance, the gating threshold—the pressure needed to open the pores—can be rationally tuned over a wide pressure range. This enables us to realize in one system differential response profiles for a variety of liquids and gases, even letting liquids flow through the pore while preventing gas from escaping.These capabilities allow us to dynamically modulate gas–liquid sorting in a microfluidic flow and to separate a three-phase air water–oil mixture, with the liquid lining ensuring sustained antifouling behaviour. Because the liquid gating strategy enables efficient long-term operation and can be applied to a variety of pore structures and membrane materials, and to micro- as well as macroscale fluid systems, we expect it to prove useful in a wide range of applications.« less

  19. Liquid-based gating mechanism with tunable multiphase selectivity and antifouling behaviour

    SciTech Connect (OSTI)

    Hou, Xu; Hu, Yuhang; Grinthal, Alison; Khan, Mughees; Aizenberg, Joanna

    2015-03-04

    Living organisms make extensive use of micro- and nanometre-sized pores as gatekeepers for controlling the movement of fluids, vapours and solids between complex environments. In addition, the ability of such pores to coordinate multiphase transport, in a highly selective and subtly triggered fashion and without clogging, has inspired interest in synthetic gated pores for applications ranging from fluid processing to 3D printing and lab-on-chip systems1-10.But although specific gating and transport behaviours have been realized by precisely tailoring pore surface chemistries and pore geometries6,11–17, a single system capable of controlling complex, selective multiphase transport has remained a distant prospect, and fouling is nearly inevitable.Here we introduce a gating mechanism that uses a capillary-stabilized liquid as a reversible, reconfigurable gate that fills and seals pores in the closed state, and creates a non-fouling, liquid-lined pore in the open state.Theoretical modelling and experiments demonstrate that for each transport substance, the gating threshold—the pressure needed to open the pores—can be rationally tuned over a wide pressure range. This enables us to realize in one system differential response profiles for a variety of liquids and gases, even letting liquids flow through the pore while preventing gas from escaping.These capabilities allow us to dynamically modulate gas–liquid sorting in a microfluidic flow and to separate a three-phase air water–oil mixture, with the liquid lining ensuring sustained antifouling behaviour. Because the liquid gating strategy enables efficient long-term operation and can be applied to a variety of pore structures and membrane materials, and to micro- as well as macroscale fluid systems, we expect it to prove useful in a wide range of applications.

  20. SU-E-J-159: Analysis of Total Imaging Uncertainty in Respiratory-Gated Radiotherapy

    SciTech Connect (OSTI)

    Suzuki, J; Okuda, T; Sakaino, S; Yokota, N

    2015-06-15

    Purpose: In respiratory-gated radiotherapy, the gating phase during treatment delivery needs to coincide with the corresponding phase determined during the treatment plan. However, because radiotherapy is performed based on the image obtained for the treatment plan, the time delay, motion artifact, volume effect, and resolution in the images are uncertain. Thus, imaging uncertainty is the most basic factor that affects the localization accuracy. Therefore, these uncertainties should be analyzed. This study aims to analyze the total imaging uncertainty in respiratory-gated radiotherapy. Methods: Two factors of imaging uncertainties related to respiratory-gated radiotherapy were analyzed. First, CT image was used to determine the target volume and 4D treatment planning for the Varian Realtime Position Management (RPM) system. Second, an X-ray image was acquired for image-guided radiotherapy (IGRT) for the BrainLAB ExacTrac system. These factors were measured using a respiratory gating phantom. The conditions applied during phantom operation were as follows: respiratory wave form, sine curve; respiratory cycle, 4 s; phantom target motion amplitude, 10, 20, and 29 mm (which is maximum phantom longitudinal motion). The target and cylindrical marker implanted in the phantom coverage of the CT images was measured and compared with the theoretically calculated coverage from the phantom motion. The theoretical position of the cylindrical marker implanted in the phantom was compared with that acquired from the X-ray image. The total imaging uncertainty was analyzed from these two factors. Results: In the CT image, the uncertainty between the target and cylindrical marker’s actual coverage and the coverage of CT images was 1.19 mm and 2.50mm, respectively. In the Xray image, the uncertainty was 0.39 mm. The total imaging uncertainty from the two factors was 1.62mm. Conclusion: The total imaging uncertainty in respiratory-gated radiotherapy was clinically acceptable. However

  1. Liquid-based gating mechanism with tunable multiphase selectivity and antifouling behaviour

    SciTech Connect (OSTI)

    Hou, Xu; Hu, Yuhang; Grinthal, Alison; Khan, Mughees; Aizenberg, Joanna

    2015-03-04

    Living organisms make extensive use of micro- and nanometre-sized pores as gatekeepers for controlling the movement of fluids, vapours and solids between complex environments. In addition, the ability of such pores to coordinate multiphase transport, in a highly selective and subtly triggered fashion and without clogging, has inspired interest in synthetic gated pores for applications ranging from fluid processing to 3D printing and lab-on-chip systems1-10.But although specific gating and transport behaviours have been realized by precisely tailoring pore surface chemistries and pore geometries6,1117, a single system capable of controlling complex, selective multiphase transport has remained a distant prospect, and fouling is nearly inevitable.Here we introduce a gating mechanism that uses a capillary-stabilized liquid as a reversible, reconfigurable gate that fills and seals pores in the closed state, and creates a non-fouling, liquid-lined pore in the open state.Theoretical modelling and experiments demonstrate that for each transport substance, the gating thresholdthe pressure needed to open the porescan be rationally tuned over a wide pressure range. This enables us to realize in one system differential response profiles for a variety of liquids and gases, even letting liquids flow through the pore while preventing gas from escaping.These capabilities allow us to dynamically modulate gasliquid sorting in a microfluidic flow and to separate a three-phase air wateroil mixture, with the liquid lining ensuring sustained antifouling behaviour. Because the liquid gating strategy enables efficient long-term operation and can be applied to a variety of pore structures and membrane materials, and to micro- as well as macroscale fluid systems, we expect it to prove useful in a wide range of applications.

  2. Charging dynamics of a floating gate transistor with site-controlled quantum dots

    SciTech Connect (OSTI)

    Maier, P. Hartmann, F.; Emmerling, M.; Schneider, C.; Höfling, S.; Kamp, M.; Worschech, L.

    2014-08-04

    A quantum dot memory based on a GaAs/AlGaAs quantum wire with site-controlled InAs quantum dots was realized by means of molecular beam epitaxy and etching techniques. By sampling of different gate voltage sweeps for the determination of charging and discharging thresholds, it was found that discharging takes place at short time scales of μs, whereas several seconds of waiting times within a distinct negative gate voltage range were needed to charge the quantum dots. Such quantum dot structures have thus the potential to implement logic functions comprising charge and time dependent ingredients such as counting of signals or learning rules.

  3. ARPA-E Announces 2012 Energy Innovation Summit Featuring Bill Gates, Fred

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Smith and Lee Scott | Department of Energy 2012 Energy Innovation Summit Featuring Bill Gates, Fred Smith and Lee Scott ARPA-E Announces 2012 Energy Innovation Summit Featuring Bill Gates, Fred Smith and Lee Scott September 9, 2011 - 9:25am Addthis New York, NY - The U.S. Department of Energy's Advanced Research Projects Agency - Energy (ARPA-E) Director, Arun Majumdar, announced yesterday that the Agency will hold its third annual ARPA-E Energy Innovation Summit from February 27 - 29, 2012

  4. DOE Tour of Zero: Row Homes at RidgeGate by Thrive Home Builders |

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Department of Energy Row Homes at RidgeGate by Thrive Home Builders DOE Tour of Zero: Row Homes at RidgeGate by Thrive Home Builders 1 of 14 Thrive Home Builders constructed this multifamily building in Denver, Colorado, to the performance criteria of the DOE Energy Zero Energy Ready Home (ZERH) program. 2 of 14 Each 1,815-square-foot unit is estimated to have average utility costs of less than $45 a month from the combined energy-efficiency measures and a 2.6-kW solar electric generation

  5. Transistor operation and mobility enhancement in top-gated LaAlO_3 /

    Office of Scientific and Technical Information (OSTI)

    SrTiO_3 heterostructures (Journal Article) | SciTech Connect Journal Article: Transistor operation and mobility enhancement in top-gated LaAlO_3 / SrTiO_3 heterostructures Citation Details In-Document Search Title: Transistor operation and mobility enhancement in top-gated LaAlO_3 / SrTiO_3 heterostructures Authors: Hosoda, Masayuki ; Hikita, Yasuyuki ; Hwang, Harold Y. ; Bell1, Christopher Publication Date: 2013-06-18 OSTI Identifier: 1084270 Report Number(s): SLAC-PUB-15597 DOE Contract

  6. A spin-wave logic gate based on a width-modulated dynamic magnonic crystal

    SciTech Connect (OSTI)

    Nikitin, Andrey A.; Ustinov, Alexey B.; Semenov, Alexander A.; Kalinikos, Boris A.; Chumak, Andrii V.; Serga, Alexander A.; Vasyuchka, Vitaliy I.; Hillebrands, Burkard; Lhderanta, Erkki

    2015-03-09

    An electric current controlled spin-wave logic gate based on a width-modulated dynamic magnonic crystal is realized. The device utilizes a spin-wave waveguide fabricated from a single-crystal Yttrium Iron Garnet film and two conducting wires attached to the film surface. Application of electric currents to the wires provides a means for dynamic control of the effective geometry of waveguide and results in a suppression of the magnonic band gap. The performance of the magnonic crystal as an AND logic gate is demonstrated.

  7. DOE Tour of Zero: Row Homes at RidgeGate by Thrive Home Builders |

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Department of Energy Row Homes at RidgeGate by Thrive Home Builders DOE Tour of Zero: Row Homes at RidgeGate by Thrive Home Builders Addthis 1 of 14 Thrive Home Builders constructed this multifamily building in Denver, Colorado, to the performance criteria of the DOE Energy Zero Energy Ready Home (ZERH) program. 2 of 14 Each 1,815-square-foot unit is estimated to have average utility costs of less than $45 a month from the combined energy-efficiency measures and a 2.6-kW solar electric

  8. SU-E-J-126: Respiratory Gating Quality Assurance: A Simple Method to Achieve Millisecond Temporal Resolution

    SciTech Connect (OSTI)

    McCabe, B; Wiersma, R

    2014-06-01

    Purpose: Low temporal latency between a gating on/off signal and a linac beam on/off during respiratory gating is critical for patient safety. Although, a measurement of temporal lag is recommended by AAPM Task Group 142 for commissioning and annual quality assurance, there currently exists no published method. Here we describe a simple, inexpensive, and reliable method to precisely measure gating lag at millisecond resolutions. Methods: A Varian Real-time Position Management™ (RPM) gating simulator with rotating disk was modified with a resistive flex sensor (Spectra Symbol) attached to the gating box platform. A photon diode was placed at machine isocenter. Output signals of the flex sensor and diode were monitored with a multichannel oscilloscope (Tektronix™ DPO3014). Qualitative inspection of the gating window/beam on synchronicity were made by setting the linac to beam on/off at end-expiration, and the oscilloscope's temporal window to 100 ms to visually examine if the on/off timing was within the recommended 100-ms tolerance. Quantitative measurements were made by saving the signal traces and analyzing in MatLab™. The on and off of the beam signal were located and compared to the expected gating window (e.g. 40% to 60%). Four gating cycles were measured and compared. Results: On a Varian TrueBeam™ STx linac with RPM gating software, the average difference in synchronicity at beam on and off for four cycles was 14 ms (3 to 30 ms) and 11 ms (2 to 32 ms), respectively. For a Varian Clinac™ 21EX the average difference at beam on and off was 127 ms (122 to 133 ms) and 46 ms (42 to 49 ms), respectively. The uncertainty in the synchrony difference was estimated at ±6 ms. Conclusion: This new gating QA method is easy to implement and allows for fast qualitative inspection and quantitative measurements for commissioning and TG-142 annual QA measurements.

  9. Performance of a 512 x 512 Gated CMOS Imager with a 250 ps Exposure Time

    SciTech Connect (OSTI)

    Teruya, A T; Moody, J D; Hsing, W W; Brown, C G; Griffin, M; Mead, A S

    2012-10-01

    We describe the performance of a 512x512 gated CMOS read out integrated circuit (ROIC) with a 250 ps exposure time. A low-skew, H-tree trigger distribution system is used to locally generate individual pixel gates in each 8x8 neighborhood of the ROIC. The temporal width of the gate is voltage controlled and user selectable via a precision potentiometer. The gating implementation was first validated in optical tests of a 64x64 pixel prototype ROIC developed as a proof-of-concept during the early phases of the development program. The layout of the H-Tree addresses each quadrant of the ROIC independently and admits operation of the ROIC in two modes. If common mode triggering is used, the camera provides a single 512x512 image. If independent triggers are used, the camera can provide up to four 256x256 images with a frame separation set by the trigger intervals. The ROIC design includes small (sub-pixel) optical photodiode structures to allow test and characterization of the ROIC using optical sources prior to bump bonding. Reported test results were obtained using short pulse, second harmonic Ti:Sapphire laser systems operating at ?~ 400 nm at sub-ps pulse widths.

  10. Structural and electrical characterization of CoTiN metal gates

    SciTech Connect (OSTI)

    Wongpiya, Ranida; Ouyang, Jiaomin; Chung, Chia-Jung; Duong, Duc T.; Clemens, Bruce; Deal, Michael; Nishi, Yoshio

    2015-02-21

    As the gate size continues to decrease in nanoscale transistors, having metal gates with amorphous or near amorphous structures can potentially reduce grain-induced work function variation. Furthermore, amorphous materials are known to have superior diffusion barrier properties, which can help prevent work function change due to the diffusion of metals in contact with the gate. In this work we show that with the addition of cobalt, thin films of polycrystalline TiN become more amorphous with a smaller grain size. Co{sub x}(TiN){sub 1-x} films, where x?=?6080%, appear to consist of nanocrystals embedded in an amorphous matrix, and are thermally stable with no significant crystallization up to an annealing temperature of at least 600?C. Reducing the nitrogen gas flow ratio during sputter deposition from 9% to 2.5% further decreases the films' crystallinity, which is apparent by more sparse and even smaller nanocrystals. In addition to being partially amorphous, these CoTiN films also exhibit good thermal stability, low resistivity, low roughness, and have the potential for atomic layer deposition compatibility. Even though these materials are not completely amorphous, their small crystal size and amorphous matrix can potentially reduce work function variation and improve their diffusion barrier property. These properties make CoTiN a good candidate as a gate material for future nanoelectronic devices and technology.

  11. Multiqubit gates protected by adiabaticity and dynamical decoupling applicable to donor qubits in silicon

    SciTech Connect (OSTI)

    Witzel, Wayne M.; Montaño, Inès; Muller, Richard P.; Carroll, Malcolm S.

    2015-08-19

    In this study, we present a strategy for producing multiqubit gates that promise high fidelity with minimal tuning requirements. Our strategy combines gap protection from the adiabatic theorem with dynamical decoupling in a complementary manner. Energy-level transition errors are protected by adiabaticity and remaining phase errors are mitigated via dynamical decoupling. This is a powerful way to divide and conquer the various error channels. In order to accomplish this without violating a no-go theorem regarding black-box dynamically corrected gates [Phys. Rev. A 80, 032314 (2009)], we require a robust operating point (sweet spot) in control space where the qubits interact with little sensitivity to noise. There are also energy gap requirements for effective adiabaticity. We apply our strategy to an architecture in Si with P donors where we assume we can shuttle electrons between different donors. Electron spins act as mobile ancillary qubits and P nuclear spins act as long-lived data qubits. This system can have a very robust operating point where the electron spin is bound to a donor in the quadratic Stark shift regime. High fidelity single qubit gates may be performed using well-established global magnetic resonance pulse sequences. Single electron-spin preparation and measurement has also been demonstrated. Putting this all together, we present a robust universal gate set for quantum computation.

  12. Multiqubit gates protected by adiabaticity and dynamical decoupling applicable to donor qubits in silicon

    DOE PAGES-Beta [OSTI]

    Witzel, Wayne M.; Montaño, Inès; Muller, Richard P.; Carroll, Malcolm S.

    2015-08-19

    In this study, we present a strategy for producing multiqubit gates that promise high fidelity with minimal tuning requirements. Our strategy combines gap protection from the adiabatic theorem with dynamical decoupling in a complementary manner. Energy-level transition errors are protected by adiabaticity and remaining phase errors are mitigated via dynamical decoupling. This is a powerful way to divide and conquer the various error channels. In order to accomplish this without violating a no-go theorem regarding black-box dynamically corrected gates [Phys. Rev. A 80, 032314 (2009)], we require a robust operating point (sweet spot) in control space where the qubits interactmore » with little sensitivity to noise. There are also energy gap requirements for effective adiabaticity. We apply our strategy to an architecture in Si with P donors where we assume we can shuttle electrons between different donors. Electron spins act as mobile ancillary qubits and P nuclear spins act as long-lived data qubits. This system can have a very robust operating point where the electron spin is bound to a donor in the quadratic Stark shift regime. High fidelity single qubit gates may be performed using well-established global magnetic resonance pulse sequences. Single electron-spin preparation and measurement has also been demonstrated. Putting this all together, we present a robust universal gate set for quantum computation.« less

  13. Method and system for measuring gate valve clearances and seating force

    DOE Patents [OSTI]

    Casada, D.A.; Haynes, H.D.; Moyers, J.C.; Stewart, B.K.

    1996-01-30

    Valve clearances and seating force, as well as other valve operational parameters, are determined by measuring valve stem rotation during opening and closing operations of a translatable gate valve. The magnitude of the stem rotation, and the relative difference between the stem rotation on opening and closing provides valuable data on the valve internals in a non-intrusive manner. 8 figs.

  14. Multi-qubit gates protected by adiabaticity and dynamical decoupling applicable to donor qubits in silicon

    DOE PAGES-Beta [OSTI]

    Witzel, Wayne; Montano, Ines; Muller, Richard P.; Carroll, Malcolm S.

    2015-08-19

    In this paper, we present a strategy for producing multiqubit gates that promise high fidelity with minimal tuning requirements. Our strategy combines gap protection from the adiabatic theorem with dynamical decoupling in a complementary manner. Energy-level transition errors are protected by adiabaticity and remaining phase errors are mitigated via dynamical decoupling. This is a powerful way to divide and conquer the various error channels. In order to accomplish this without violating a no-go theorem regarding black-box dynamically corrected gates [Phys. Rev. A 80, 032314 (2009)], we require a robust operating point (sweet spot) in control space where the qubits interactmore » with little sensitivity to noise. There are also energy gap requirements for effective adiabaticity. We apply our strategy to an architecture in Si with P donors where we assume we can shuttle electrons between different donors. Electron spins act as mobile ancillary qubits and P nuclear spins act as long-lived data qubits. Furthermore, this system can have a very robust operating point where the electron spin is bound to a donor in the quadratic Stark shift regime. High fidelity single qubit gates may be performed using well-established global magnetic resonance pulse sequences. Single electron-spin preparation and measurement has also been demonstrated. Thus, putting this all together, we present a robust universal gate set for quantum computation.« less

  15. Multi-qubit gates protected by adiabaticity and dynamical decoupling applicable to donor qubits in silicon

    SciTech Connect (OSTI)

    Witzel, Wayne; Montano, Ines; Muller, Richard P.; Carroll, Malcolm S.

    2015-08-19

    In this paper, we present a strategy for producing multiqubit gates that promise high fidelity with minimal tuning requirements. Our strategy combines gap protection from the adiabatic theorem with dynamical decoupling in a complementary manner. Energy-level transition errors are protected by adiabaticity and remaining phase errors are mitigated via dynamical decoupling. This is a powerful way to divide and conquer the various error channels. In order to accomplish this without violating a no-go theorem regarding black-box dynamically corrected gates [Phys. Rev. A 80, 032314 (2009)], we require a robust operating point (sweet spot) in control space where the qubits interact with little sensitivity to noise. There are also energy gap requirements for effective adiabaticity. We apply our strategy to an architecture in Si with P donors where we assume we can shuttle electrons between different donors. Electron spins act as mobile ancillary qubits and P nuclear spins act as long-lived data qubits. Furthermore, this system can have a very robust operating point where the electron spin is bound to a donor in the quadratic Stark shift regime. High fidelity single qubit gates may be performed using well-established global magnetic resonance pulse sequences. Single electron-spin preparation and measurement has also been demonstrated. Thus, putting this all together, we present a robust universal gate set for quantum computation.

  16. Design and performance of a respiratory amplitude gating device for PET/CT imaging

    SciTech Connect (OSTI)

    Chang Guoping; Chang Tingting; Clark, John W. Jr.; Mawlawi, Osama R.

    2010-04-15

    Purpose: Recently, the authors proposed a free-breathing amplitude gating (FBAG) technique for PET/CT scanners. The implementation of this technique required specialized hardware and software components that were specifically designed to interface with commercial respiratory gating devices to generate the necessary triggers required for the FBAG technique. The objective of this technical note is to introduce an in-house device that integrates all the necessary hardware and software components as well as tracks the patient's respiratory motion to realize amplitude gating on PET/CT scanners. Methods: The in-house device is composed of a piezoelectric transducer coupled to a data-acquisition system in order to monitor the respiratory waveform. A LABVIEW program was designed to control the data-acquisition device and inject triggers into the PET list stream whenever the detected respiratory amplitude crossed a predetermined amplitude range. A timer was also programmed to stop the scan when the accumulated time within the selected amplitude range reached a user-set interval. This device was tested using a volunteer and a phantom study. Results: The results from the volunteer and phantom studies showed that the in-house device can detect similar respiratory signals as commercially available respiratory gating systems and is able to generate the necessary triggers to suppress respiratory motion artifacts. Conclusions: The proposed in-house device can be used to implement the FBAG technique in current PET/CT scanners.

  17. Method and system for measuring gate valve clearances and seating force

    DOE Patents [OSTI]

    Casada, Donald A.; Haynes, Howard D.; Moyers, John C.; Stewart, Brian K.

    1996-01-01

    Valve clearances and seating force, as well as other valve operational parameters, are determined by measuring valve stem rotation during opening and closing operations of a translatable gate valve. The magnitude of the stem rotation, and the relative difference between the stem rotation on opening and closing provides valuable data on the valve internals in a non-intrusive manner.

  18. As you prepare for your upcoming beam time, please be aware that construction is planned to update SLAC Gate 17 with RFID proximity card access hardware and to change the stairs next to the Security hut to an ADA compliant ramp. Please forward this to your proposal collaborators (and ensure that all users have registered and completed training before they arrive). This construction is scheduled to begin Tuesday 5/28 and be completed by 6/28. During this construction, access to the LCLS and SSRL buildings and experimental facilities will be provided as follows: VEHICLES ONLY THROUGH GATE 17 5/28-6/28 0600-1530 (6 am-3:30 pm) Construction Zone. Only VEHICLE traffic will be allowed access through Gate 17 and flagman will provide traffic control. 1530-1800 (3:30-6:00 pm) Assumes construction will have stopped for the day; both traffic lanes will be open for vehicles. 1800-0600 (6 pm-6 am) As now, Gate 17 will be closed or barricaded overnight. PEDESTRIANS ONLY THROUGH GATE 16 5/28-6/28 The pedestrian turnstile at Gate 16A will not change. The turnstile is available for pedestrian use 24/7 as long as the individual has a valid SLAC ID badge (and there is a guard at Gate 30 to 'buzz' them through). 0700-1600 (6 am-4 pm) Pedestrians who would normally walk through Gate 17 will instead follow the detour to Gate 16 swing gate which will be unlocked and staffed by Security. A valid SLAC ID badge is needed to enter; new users without IDs will be allowed to proceed for check-in and badging after confirmation with the User Research Administration Office (see detour map attached). FYI - After the construction is completed and proximity card readers are fully functional, users and staff will enter Gates 17 and 30 using an activated RFID proximity card. More details to follow.

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Building 137 Bldg. 270 CONSTRUCTION IMPACTS PEDESTRIAN AND VEHICLE ACCESS THROUGH SLAC SECURITY GATE 17 ~ May 28-June 28, 2013 The stairs next to the Gate 17 Guard House will be replaced with an ADA compliant ramp; the turnstile and fence at SLAC Gate 17 will be updated with RFID proximity card access hardware. During this construction, access beyond the fence, including the SSRL and LCLS buildings and user facilities will be provided as follows: VEHICLES ONLY THROUGH GATE 17 Security will

  19. SU-E-CAMPUS-J-01: TG142 Complied Comprehensive Commissioning and Quality Assurance Procedure for Respiratory Gating

    SciTech Connect (OSTI)

    Woods, K; Rong, Y; Weldon, M; Gupta, N

    2014-06-15

    Purpose: To develop and establish a comprehensive gating commissioning and quality assurance procedure in compliance with TG142. Methods: Quality assurance tests on three Varian LINACs included beam output and energy constancy, calibration of surrogate, as well as phase and amplitude gating temporal accuracy. A diode array (MapCHECK 2) and film (Gafchromic EBT2) were used to measure the temporal accuracy of phase and amplitude gating windows. A motion simulation device (MotionSim) was used to simulate respiratory motion for both detectors. An end-to-end test was also performed on all three machines. The overall accuracy and uncertainty was analyzed and compared. Results: The end-to-end test using an anthropomorphic lung phantom (CIRS) results in an OSL dose difference reading within 5% (within measurement uncertainty) for both phase and amplitude gated treatment. Film results showed < 1% agreement between profiles for gated delivery and predicted dose. The diode array demonstrated an 80% passing rate for gamma criteria of 2%/0.2 mm, which results in a 111 msec temporal accuracy. However, the diode array is limited by its spatial resolution of measurements, due to its 7.07 mm diode spacing. Film provided higher measuring resolution, thus demonstrated a temporal accuracy of <100 msec. Conclusion: Results showed consistent respiratory gating stability and accuracy. MapCHECK 2 may not be sufficient for the temporal accuracy test in the respiratory gating treatment in order to meet the corresponding tolerance in TG142. One would need to decrease respiratory motion speed from the surrogate or tighten the gating window in order to be within tolerance of 100 msec temporal accuracy per TG-142. The end-to-end test offers insight to the overall accuracy and uncertainties with a gated protocol. Compared to static delivery, respiratory motion increases the overall uncertainty of treatment delivery from 3% to 5% dose difference.

  20. SU-E-J-185: Gated CBCT Imaging for Positioning Moving Lung Tumor in Lung SBRT Treatment

    SciTech Connect (OSTI)

    Li, X; Li, T; Zhang, Y; Burton, S; Karlovits, B; Clump, D; Heron, D; Huq, M

    2014-06-01

    Purpose: Lung stereo-tactic body radiotherapy(SBRT) treatment requires high accuracy of lung tumor positioning during treatment, which is usually accomplished by free breathing Cone-Beam computerized tomography (CBCT) scan. However, respiratory motion induced image artifacts in free breathing CBCT may degrade such positioning accuracy. The purpose of this study is to investigate the feasibility of gated CBCT imaging for lung SBRT treatment. Methods: Six Lung SBRT patients were selected for this study. The respiratory motion of the tumors ranged from 1.2cm to 3.5cm, and the gating windows for all patients were set between 35% and 65% of the respiratory phases. Each Lung SBRT patient underwent free-breathing CBCT scan using half-fan scan technique. The acquired projection images were transferred out for off-line analyses. An In-house semi-automatic algorithm was developed to trace the diaphragm movement from those projection images to acquire a patient's specific respiratory motion curve, which was used to correlate respiratory phases with each projection image. Afterwards, a filtered back-projection algorithm was utilized to reconstruct the gated CBCT images based on the projection images only within the gating window. Results: Target volumes determined by free breathing CBCT images were 71.9%±72% bigger than the volume shown in gated CBCT image. On the contrary, the target volume differences between gated CBCT and planning CT images at exhale stage were 5.8%±2.4%. The center to center distance of the targets shown in free breathing CBCT and gated CBCT images were 9.2±8.1mm. For one particular case, the superior boundary of the target was shifted 15mm between free breathing CBCT and gated CBCT. Conclusion: Gated CBCT imaging provides better representation of the moving lung tumor with less motion artifacts, and has the potential to improve the positioning accuracy in lung SBRT treatment.

  1. Magneto-transport study of top- and back-gated LaAlO{sub 3}/SrTiO{sub 3} heterostructures

    SciTech Connect (OSTI)

    Liu, W. Gariglio, S.; Fête, A.; Li, D.; Boselli, M.; Stornaiuolo, D.; Triscone, J.-M.

    2015-06-01

    We report a detailed analysis of magneto-transport properties of top- and back-gated LaAlO{sub 3}/SrTiO{sub 3} heterostructures. Efficient modulation in magneto-resistance, carrier density, and mobility of the two-dimensional electron liquid present at the interface is achieved by sweeping top and back gate voltages. Analyzing those changes with respect to the carrier density tuning, we observe that the back gate strongly modifies the electron mobility while the top gate mainly varies the carrier density. The evolution of the spin-orbit interaction is also followed as a function of top and back gating.

  2. Effect of top gate bias on photocurrent and negative bias illumination stress instability in dual gate amorphous indium-gallium-zinc oxide thin-film transistor

    SciTech Connect (OSTI)

    Lee, Eunji; Chowdhury, Md Delwar Hossain; Park, Min Sang; Jang, Jin

    2015-12-07

    We have studied the effect of top gate bias (V{sub TG}) on the generation of photocurrent and the decay of photocurrent for back channel etched inverted staggered dual gate structure amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film-transistors. Upon 5 min of exposure of 365 nm wavelength and 0.7 mW/cm{sup 2} intensity light with negative bottom gate bias, the maximum photocurrent increases from 3.29 to 322 pA with increasing the V{sub TG} from −15 to +15 V. By changing V{sub TG} from negative to positive, the Fermi level (E{sub F}) shifts toward conduction band edge (E{sub C}), which substantially controls the conversion of neutral vacancy to charged one (V{sub O} → V{sub O}{sup +}/V{sub O}{sup 2+} + e{sup −}/2e{sup −}), peroxide (O{sub 2}{sup 2−}) formation or conversion of ionized interstitial (O{sub i}{sup 2−}) to neutral interstitial (O{sub i}), thus electron concentration at conduction band. With increasing the exposure time, more carriers are generated, and thus, maximum photocurrent increases until being saturated. After negative bias illumination stress, the transfer curve shows −2.7 V shift at V{sub TG} = −15 V, which gradually decreases to −0.42 V shift at V{sub TG} = +15 V. It clearly reveals that the position of electron quasi-Fermi level controls the formation of donor defects (V{sub O}{sup +}/V{sub O}{sup 2+}/O{sub 2}{sup 2−}/O{sub i}) and/or hole trapping in the a-IGZO /interfaces.

  3. A planning study investigating dual-gated volumetric arc stereotactic treatment of primary renal cell carcinoma

    SciTech Connect (OSTI)

    Devereux, Thomas; Pham, Daniel; Kron, Tomas; Foroudi, Farshad; Supple, Jeremy; Siva, Shankar

    2015-04-01

    This is a planning study investigating the dosimetric advantages of gated volumetric-modulated arc therapy (VMAT) to the end-exhale and end-inhale breathing phases for patients undergoing stereotactic treatment of primary renal cell carcinoma. VMAT plans were developed from the end-inhale (VMATinh) and the end-exhale (VMATexh) phases of the breathing cycle as well as a VMAT plan and 3-dimensional conformal radiation therapy plan based on an internal target volume (ITV) (VMATitv). An additional VMAT plan was created by giving the respective gated VMAT plan a 50% weighting and summing the inhale and exhale plans together to create a summed gated plan. Dose to organs at risk (OARs) as well as comparison of intermediate and low-dose conformity was evaluated. There was no difference in the volume of healthy tissue receiving the prescribed dose for the planned target volume (PTV) (CI100%) for all the VMAT plans; however, the mean volume of healthy tissue receiving 50% of the prescribed dose for the PTV (CI50%) values were 4.7 (± 0.2), 4.6 (± 0.2), and 4.7 (± 0.6) for the VMATitv, VMATinh, and VMATexh plans, respectively. The VMAT plans based on the exhale and inhale breathing phases showed a 4.8% and 2.4% reduction in dose to 30 cm{sup 3} of the small bowel, respectively, compared with that of the ITV-based VMAT plan. The summed gated VMAT plans showed a 6.2% reduction in dose to 30 cm{sup 3} of the small bowel compared with that of the VMAT plans based on the ITV. Additionally, when compared with the inhale and the exhale VMAT plans, a 4% and 1.5%, respectively, reduction was observed. Gating VMAT was able to reduce the amount of prescribed, intermediate, and integral dose to healthy tissue when compared with VMAT plans based on an ITV. When summing the inhale and exhale plans together, dose to healthy tissue and OARs was optimized. However, gating VMAT plans would take longer to treat and is a factor that needs to be considered.

  4. Vehicle Technologies Office Merit Review 2014: GATE Center for Electric Drive Transportation at the University of Michigan- Dearborn

    Energy.gov [DOE]

    Presentation given by Regents University of Michigan at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about GATE Center...

  5. A review of the use and potential of the GATE Monte Carlo simulation code for radiation therapy and dosimetry applications

    SciTech Connect (OSTI)

    Sarrut, David; Universit Lyon 1; Centre Lon Brard ; Bardis, Manuel; Marcatili, Sara; Mauxion, Thibault; Boussion, Nicolas; Freud, Nicolas; Ltang, Jean-Michel; Jan, Sbastien; Maigne, Lydia; Perrot, Yann; Pietrzyk, Uwe; Robert, Charlotte; and others

    2014-06-15

    In this paper, the authors' review the applicability of the open-source GATE Monte Carlo simulation platform based on the GEANT4 toolkit for radiation therapy and dosimetry applications. The many applications of GATE for state-of-the-art radiotherapy simulations are described including external beam radiotherapy, brachytherapy, intraoperative radiotherapy, hadrontherapy, molecular radiotherapy, and in vivo dose monitoring. Investigations that have been performed using GEANT4 only are also mentioned to illustrate the potential of GATE. The very practical feature of GATE making it easy to model both a treatment and an imaging acquisition within the same frameworkis emphasized. The computational times associated with several applications are provided to illustrate the practical feasibility of the simulations using current computing facilities.

  6. Magnetic roller gas gate employing transonic sweep gas flow to isolate regions of differing gaseous composition or pressure

    DOE Patents [OSTI]

    Doehler, Joachim

    1994-12-20

    Disclosed herein is an improved gas gate for interconnecting regions of differing gaseous composition and/or pressure. The gas gate includes a narrow, elongated passageway through which substrate material is adapted to move between said regions and inlet means for introducing a flow of non-contaminating sweep gas into a central portion of said passageway. The gas gate is characterized in that the height of the passageway and the flow rate of the sweep gas therethrough provides for transonic flow of the sweep gas between the inlet means and at least one of the two interconnected regions, thereby effectively isolating one region, characterized by one composition and pressure, from another region, having a differing composition and/or pressure, by decreasing the mean-free-path length between collisions of diffusing species within the transonic flow region. The gas gate preferably includes a manifold at the juncture point where the gas inlet means and the passageway interconnect.

  7. A reconfigurable gate architecture for Si/SiGe quantum dots

    SciTech Connect (OSTI)

    Zajac, D. M.; Hazard, T. M.; Mi, X.; Wang, K.; Petta, J. R.

    2015-06-01

    We demonstrate a reconfigurable quantum dot gate architecture that incorporates two interchangeable transport channels. One channel is used to form quantum dots, and the other is used for charge sensing. The quantum dot transport channel can support either a single or a double quantum dot. We demonstrate few-electron occupation in a single quantum dot and extract charging energies as large as 6.6 meV. Magnetospectroscopy is used to measure valley splittings in the range of 35–70 μeV. By energizing two additional gates, we form a few-electron double quantum dot and demonstrate tunable tunnel coupling at the (1,0) to (0,1) interdot charge transition.

  8. A method for evaluating pressure locking and thermal binding of gate valves

    SciTech Connect (OSTI)

    Dogan, T.

    1996-12-01

    A method is described to evaluate the susceptibility of gate valves to pressure locking and thermal binding. Binding of the valve disc in the closed position due to high pressure water trapped in the bonnet cavity (pressure locking) or differential thermal expansion of the disk in the seat (thermal binding) represents a potential mechanism that can prevent safety-related systems from functioning when called upon. The method described here provides a general equation that can be applied to a given gate valve design and set of operating conditions to determine the susceptibility of the valve to fail due to disc binding. The paper is organized into three parts. The first part discusses the physical mechanisms that cause disc binding. The second part describes the mathematical equations. The third part discusses the conclusions.

  9. Air-gap gating of MgZnO/ZnO heterostructures

    SciTech Connect (OSTI)

    Tambo, T.; Falson, J. Kozuka, Y.; Maryenko, D.; Tsukazaki, A.; Kawasaki, M.

    2014-08-28

    The adaptation of air-gap dielectric based field-effect transistor technology to controlling the MgZnO/ZnO heterointerface confined two-dimensional electron system (2DES) is reported. We find it possible to tune the charge density of the 2DES via a gate electrode spatially separated from the heterostructure surface by a distance of 5??m. Under static gating, the observation of the quantum Hall effect suggests that the charge carrier density remains homogeneous, with the 2DES in the 3?mm square sample the sole conductor. The availability of this technology enables the exploration of the charge carrier density degree of freedom in the pristine sample limit.

  10. Gate-tunable gigantic lattice deformation in VO{sub 2}

    SciTech Connect (OSTI)

    Okuyama, D. E-mail: nakano@imr.tohoku.ac.jp Hatano, T.; Nakano, M. E-mail: nakano@imr.tohoku.ac.jp; Takeshita, S.; Ohsumi, H.; Tardif, S.; Shibuya, K.; Yumoto, H.; Koyama, T.; Ohashi, H.; Takata, M.; Kawasaki, M.; Tokura, Y.; Iwasa, Y. E-mail: nakano@imr.tohoku.ac.jp; Arima, T.

    2014-01-13

    We examined the impact of electric field on crystal lattice of vanadium dioxide (VO{sub 2}) in a field-effect transistor geometry by in-situ synchrotron x-ray diffraction measurements. Whereas the c-axis lattice parameter of VO{sub 2} decreases through the thermally induced insulator-to-metal phase transition, the gate-induced metallization was found to result in a significant increase of the c-axis length by almost 1% from that of the thermally stabilized insulating state. We also found that this gate-induced gigantic lattice deformation occurs even at the thermally stabilized metallic state, enabling dynamic control of c-axis lattice parameter by more than 1% at room temperature.

  11. Memory effect in silicon time-gated single-photon avalanche diodes

    SciTech Connect (OSTI)

    Dalla Mora, A.; Contini, D. Di Sieno, L.; Tosi, A.; Boso, G.; Villa, F.; Pifferi, A.

    2015-03-21

    We present a comprehensive characterization of the memory effect arising in thin-junction silicon Single-Photon Avalanche Diodes (SPADs) when exposed to strong illumination. This partially unknown afterpulsing-like noise represents the main limiting factor when time-gated acquisitions are exploited to increase the measurement dynamic range of very fast (picosecond scale) and faint (single-photon) optical signals following a strong stray one. We report the dependences of this unwelcome signal-related noise on photon wavelength, detector temperature, and biasing conditions. Our results suggest that this so-called “memory effect” is generated in the deep regions of the detector, well below the depleted region, and its contribution on detector response is visible only when time-gated SPADs are exploited to reject a strong burst of photons.

  12. Attosecond x-ray source generation from two-color polarized gating plasmonic field enhancement

    SciTech Connect (OSTI)

    Feng, Liqiang; State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023 ; Yuan, Minghu; Chu, Tianshu; Institute for Computational Sciences and Engineering, Laboratory of New Fiber Materials and Modern Textile, The Growing Base for State Key Laboratory, Qingdao University, Qingdao 266071

    2013-12-15

    The plasmonic field enhancement from the vicinity of metallic nanostructures as well as the polarization gating technique has been utilized to the generation of the high order harmonic and the single attosecond x-ray source. Through numerical solution of the time-dependent Schrödinger equation, for moderate the inhomogeneity and the polarized angle of the two fields, we find that not only the harmonic plateau has been extended and enhanced but also the single short quantum path has been selected to contribute to the harmonic. As a result, a series of 50 as pulses around the extreme ultraviolet and the x-ray regions have been obtained. Furthermore, by investigating the other parameters effects on the harmonic emission, we find that this two-color polarized gating plasmonic field enhancement scheme can also be achieved by the multi-cycle pulses, which is much better for experimental realization.

  13. Formation of low resistivity titanium silicide gates in semiconductor integrated circuits

    DOE Patents [OSTI]

    Ishida, Emi

    1999-08-10

    A method of forming a titanium silicide (69) includes the steps of forming a transistor having a source region (58), a drain region (60) and a gate structure (56) and forming a titanium layer (66) over the transistor. A first anneal is performed with a laser anneal at an energy level that causes the titanium layer (66) to react with the gate structure (56) to form a high resistivity titanium silicide phase (68) having substantially small grain sizes. The unreacted portions of the titanium layer (66) are removed and a second anneal is performed, thereby causing the high resistivity titanium silicide phase (68) to convert to a low resistivity titanium silicide phase (69). The small grain sizes obtained by the first anneal allow low resistivity titanium silicide phase (69) to be achieved at device geometries less than about 0.25 micron.

  14. 2012 ARPA-E Energy Innovation Summit: Fireside Chat with Steven Chu and Bill Gates

    SciTech Connect (OSTI)

    Chu, Steven; Gates, Bill; Podesta, John

    2012-02-28

    The third annual ARPA-E Energy Innovation Summit was held in Washington D.C. in February, 2012. The event brought together key players from across the energy ecosystem - researchers, entrepreneurs, investors, corporate executives, and government officials - to share ideas for developing and deploying the next generation of energy technologies. This video captures a session called 'Fireside Chat' that featured Steven Chu, the Secretary of Energy, and Bill Gates, Chairman of Microsoft Corporation. The session is moderated by John Podesta, Chair of the Center for American Progress. Energy Secretary Steven Chu and Microsoft Founder and Chairman Bill Gates exchanged ideas about how small businesses and innovators can overcome the challenges that face many startups.

  15. 2012 ARPA-E Energy Innovation Summit: Fireside Chat with Steven Chu and Bill Gates

    ScienceCinema (OSTI)

    Chu, Steven (U.S. Department of Energy Secretary); Gates, Bill (Microsoft, Chairman); Podesta, John (Center for American Progress, Chair and Counselor)

    2016-07-12

    The third annual ARPA-E Energy Innovation Summit was held in Washington D.C. in February, 2012. The event brought together key players from across the energy ecosystem - researchers, entrepreneurs, investors, corporate executives, and government officials - to share ideas for developing and deploying the next generation of energy technologies. This video captures a session called 'Fireside Chat' that featured Steven Chu, the Secretary of Energy, and Bill Gates, Chairman of Microsoft Corporation. The session is moderated by John Podesta, Chair of the Center for American Progress. Energy Secretary Steven Chu and Microsoft Founder and Chairman Bill Gates exchanged ideas about how small businesses and innovators can overcome the challenges that face many startups.

  16. Poster — Thur Eve — 37: Respiratory gating with an Elekta flattening filter free photon beam

    SciTech Connect (OSTI)

    Péloquin, S; Furstoss, C; Munger, P; Wierzbicki, W; Carrier, J-F

    2014-08-15

    In cases where surgery is not possible for lung cancer treatment, stereotactic body radiation therapy (SBRT) may be an option. One problem when treating this type of cancer is the motion of the lungs caused by the patient's respiration. It is possible to reduce the impact of this movement with the use of respiratory gating. By combining respiratory gating with a flattening filter free (FFF) photon beam linac, the increased treatment time caused by a reduced beam-on time of respiratory gating methods can be compensated by the inherent increased dose rate of FFF beams. This project's aim is to create hardware and software interfaces allowing free respiration gating on an Elekta Synergy-S linac specially modified to deliver 6 MV FFF photon beams. First, a printed circuit board was created for reading the signal from a Bellows Belt from Philips (a respiration monitor belt) and transmitting an On/Off signal to the accelerator. A software was also developed to visualize patient respiration. Secondly, a FFF model was created with the Pinnacle treatment planning system from Philips. Gamma (Γ) analysis (2%, 2 mm) was used to evaluate model. For fields going from 5.6 × 5.6 to 12 × 12 cm{sup 2}, central axis depth dose model fitting shows an average gamma value of 0.2 and 100% of gamma values remain under the Γ = 1 limit. For smaller fields (0.8 × 0.8 and 1.6 × 1.6 cm{sup 2}), Pinnacle has more trouble trying to fit the measurements, overestimating dose in penumbra and buildup regions.

  17. Crystal structure of a two-subunit TrkA octameric gating ring assembly

    DOE PAGES-Beta [OSTI]

    Deller, Marc C.; Johnson, Hope A.; Miller, Mitchell D.; Spraggon, Glen; Elsliger, Marc -André; Wilson, Ian A.; Lesley, Scott A.; Ye, Sheng

    2015-03-31

    The TM1088 locus of T. maritima codes for two proteins designated TM1088A and TM1088B, which combine to form the cytosolic portion of a putative Trk K⁺ transporter. We report the crystal structure of this assembly to a resolution of 3.45 Å. The high resolution crystal structures of the components of the assembly, TM1088A and TM1088B, were also determined independently to 1.50 Å and 1.55 Å, respectively. The TM1088 proteins are structurally homologous to each other and to other K⁺ transporter proteins, such as TrkA. These proteins form a cytosolic gating ring assembly that controls the flow of K⁺ ions acrossmore » the membrane. TM1088 represents the first structure of a two-subunit Trk assembly. Despite the atypical genetics and chain organization of the TM1088 assembly, it shares significant structural homology and an overall quaternary organization with other single-subunit K⁺ gating ring assemblies. This structure provides the first structural insights into what may be an evolutionary ancestor of more modern single-subunit K⁺ gating ring assemblies.« less

  18. Crystal structure of a two-subunit TrkA octameric gating ring assembly

    SciTech Connect (OSTI)

    Deller, Marc C.; Johnson, Hope A.; Miller, Mitchell D.; Spraggon, Glen; Elsliger, Marc -André; Wilson, Ian A.; Lesley, Scott A.; Ye, Sheng

    2015-03-31

    The TM1088 locus of T. maritima codes for two proteins designated TM1088A and TM1088B, which combine to form the cytosolic portion of a putative Trk K⁺ transporter. We report the crystal structure of this assembly to a resolution of 3.45 Å. The high resolution crystal structures of the components of the assembly, TM1088A and TM1088B, were also determined independently to 1.50 Å and 1.55 Å, respectively. The TM1088 proteins are structurally homologous to each other and to other K⁺ transporter proteins, such as TrkA. These proteins form a cytosolic gating ring assembly that controls the flow of K⁺ ions across the membrane. TM1088 represents the first structure of a two-subunit Trk assembly. Despite the atypical genetics and chain organization of the TM1088 assembly, it shares significant structural homology and an overall quaternary organization with other single-subunit K⁺ gating ring assemblies. This structure provides the first structural insights into what may be an evolutionary ancestor of more modern single-subunit K⁺ gating ring assemblies.

  19. SU-E-J-59: Effective Adaptive DMLC Gated Radiotherapy with OAR Sparing

    SciTech Connect (OSTI)

    Chen, Y; Wu, H; Zhou, Z; Sandison, MinGeorge

    2014-06-01

    Purpose: Patient respiratory motion degrades the effectiveness of cancer radiation treatment. Advanced respiratory gating delivers radiation dose accurately yet with elongated treatment time. The goal of this research is to propose a novel adaptive dMLC dynamic gating with high delivery efficiency and precision. Methods: The dose delivery of dMLC is aided by simultaneous tracking of tumor and organ at risk (OAR). The leaf opening/closing will follow the motion trajectory of the tumor while sparing the OAR. The treatment beam turns on only when there is no overlapping between OAR and tumor in BEV. A variety of evaluation metrics were considered and calculated, including duty cycle, beam toggling rate, and direct irradiation avoidance to OAR, under various combinations of different tumor margins and the distance between the centers of the tumor and OAR in BEV (expressed as dx). Results: Retrospective simulation was performed to investigate the feasibility and superiority of this technique using four groups of synchronized tumor and OAR motion data. The simulation results indicate that the tumor and OAR motion patterns and their relative positions are the dominant influential factors. The duty cycle can be greater than 96.71% yet can be as low as 6.69% depending different motion groups. This proposed technique provides good OAR protection, especially for such cases with low duty cycle for which as high as 77.71% maximal direct irradiation to OAR can be spared. Increasing dx improves the duty cycle (treatment efficiency) and provides better OAR volume sparing, whereas, that of the tumor margins has the opposite influence. Conclusion: This real-time adaptive dMLC gated radiation treatment with synchronous tumor and OAR tracking has inherent accurate dose delivery to tumor with reduced treatment time. In addition, the OAR protection capability make it an outstanding potential treatment strategy for mobile tumors.

  20. Cloning and first functional characterization of a plant cyclic nucleotide-gated cation channel

    SciTech Connect (OSTI)

    Leng, Q.; Mercier, R.W.; Yao, W.; Berkowitz, G.A.

    1999-11-01

    Cyclic nucleotide-gated (cng) non-selective cation channels have been cloned from a number of animal systems. These channels are characterized by direct gating upon cAMO or cGMO binding to the intracellular portion of the channel protein, which leads to an increase in channel conductance. Animal cng channels are involved in signal transduction systems; they translate stimulus-induced changes in cytosolic cyclic nucleotide into altered cell membrane potential and/or cation flux as part of a signal cascade pathway. Putative plant homologs of animal cng channels have been identified. However, functional characterization (i.e., demonstration of cyclic-nucleotide-dependent ion currents) of a plant cng channel has not yet been accomplished. The authors report the cloning and first functional characterization of a plant member of this family of ion channels. The Arabidopsis cDNA AtCNGC2 encodes a polypeptide with deduced homology to the {alpha}-subunit of animal channels, and facilitates cyclic nucleotide-dependent cation currents upon expression in a number of heterologous systems. AtCNGC2 expression in a yeast mutant lacking a low-affinity K{sup +} uptake system complements growth inhibition only when lipophilic nucleotides are present in the culture medium. Voltage clamp analysis indicates that Xenopus lawvis oocytes injected with AtCNGC2 cRNA demonstrate cyclic-nucleotide-dependent, inward-rectifying K{sup +} currents. Human embryonic kidney cells (HEK293) transfected with AtCNGC2 cDNA demonstrate increased permeability to Ca{sup 2+} only in the presence of lipophilic cyclic nucleotides. The evidence presented here supports the functional classification of AtCNGC2 as a cyclic-nucleotide-gated cation channel, and presents the first direct evidence identifying a plant member of this ion channel family.

  1. Gate-tunable valley-spin filtering in silicene with magnetic barrier

    SciTech Connect (OSTI)

    Wu, X. Q.; Meng, H.

    2015-05-28

    We theoretically study the valley- and spin-resolved scattering through magnetic barrier in a one layer thick silicene, using the mode-matching method for the Dirac equation. We show that the spin-valley filtering effect can be achieved and can also be tuned completely through both a top and bottom gate. Moreover, when reversing the sign of the staggered potential, we find the direction of the valley polarization is switched while the direction of spin polarization is unchanged. These results can provide some meaningful information to design valley valve residing on silicene.

  2. Note: The design of thin gap chamber simulation signal source based on field programmable gate array

    SciTech Connect (OSTI)

    Hu, Kun; Wang, Xu; Li, Feng; Jin, Ge; Lu, Houbing; Liang, Futian

    2015-01-15

    The Thin Gap Chamber (TGC) is an important part of ATLAS detector and LHC accelerator. Targeting the feature of the output signal of TGC detector, we have designed a simulation signal source. The core of the design is based on field programmable gate array, randomly outputting 256-channel simulation signals. The signal is generated by true random number generator. The source of randomness originates from the timing jitter in ring oscillators. The experimental results show that the random number is uniform in histogram, and the whole system has high reliability.

  3. Three dimensional time-gated tracking of non-blinking quantum dots in live cells

    DOE PAGES-Beta [OSTI]

    DeVore, Matthew S.; Werner, James H.; Goodwin, Peter M.; Keller, Aaron M.; Hollingsworth, Jennifer A.; Wilson, Bridget S.; Cleyrat, Cedric; Lidke, Diane S.; Ghosh, Yagnaseni; Stewart, Michael H.; et al

    2015-03-12

    Single particle tracking has provided a wealth of information about biophysical processes such as motor protein transport and diffusion in cell membranes. However, motion out of the plane of the microscope or blinking of the fluorescent probe used as a label generally limits observation times to several seconds. Here, we overcome these limitations by using novel non-blinking quantum dots as probes and employing a custom 3D tracking microscope to actively follow motion in three dimensions (3D) in live cells. As a result, signal-to-noise is improved in the cellular milieu through the use of pulsed excitation and time-gated detection.

  4. SU-E-J-60: Evaluation of Temporal Lag in Radiotherapy Gating for Tumor Motion Trajectories

    SciTech Connect (OSTI)

    Belcher, AH; McCabe, B; Wiersma, RD

    2015-06-15

    Purpose: Evaluating timing differences between LINAC beam ON/OFF and the estimation of tumor positioning using gating systems is essential for establishing confidence when treating with gating during radiotherapy, and is an annual requirement of TG-142. Temporal discrepancies between the trajectories of external marker surrogates and beam delivery may vary depending upon the type of external marker motion, which is quantified in this work for several trajectories. Methods: A precise robotic 3D motion stage performed several trajectories typically used for gating phantoms, including sinusoidal and Lujan-type motion; a commercial respiratory motion simulator was also employed. The true motions were monitored using variable resistors. The beam ON/OFF was controlled separately by two RPM (Varian) systems, an integrated version delivered by a Varian Truebeam LINAC and version 1.6 delivered by a Varian Trilogy, and measured using a diode. The resistor and diode signals were read by a multichannel digital oscilloscope, and timing differences between beam ON/OFF as measured by the diode and the phantom motion were determined using a peak detection algorithm. Results: Timing differences between beam ON/OFF and 3D stage motion peaks (diode—true motion timing) were computed to be 79.4 & 57.7ms for sinusoidal motion and 109.1 & 63.6ms for Lujan-type motion on the Truebeam LINAC, for beam ON and OFF, respectively. Timing differences for the Trilogy LINAC were 34.4 & 55.2ms for the sinusoidal motion and 29.0 & 26.3ms for the Lujan-type motion, for beam ON and OFF, respectively. With the commercial motion simulator, the timing differences were found to be −9ms and −78ms for beam ON/OFF, respectively, with the Truebeam, and −97.6ms and −60.9ms for beam ON/OFF, respectively, with the Trilogy. Conclusion: Setup-dependent temporal lags were found using this methodology. These discrepancies have the potential to influence quality assurance on gating systems and ultimately

  5. Three dimensional time-gated tracking of non-blinking quantum dots in live cells

    SciTech Connect (OSTI)

    DeVore, Matthew S.; Werner, James H.; Goodwin, Peter M.; Keller, Aaron M.; Hollingsworth, Jennifer A.; Wilson, Bridget S.; Cleyrat, Cedric; Lidke, Diane S.; Ghosh, Yagnaseni; Stewart, Michael H.; Stich, Dominik G.; Phipps, Mary E.

    2015-12-03

    Single particle tracking has provided a wealth of information about biophysical processes such as motor protein transport and diffusion in cell membranes. However, motion out of the plane of the microscope or blinking of the fluorescent probe used as a label generally limits observation times to several seconds. Here, we overcome these limitations by using novel non-blinking quantum dots as probes and employing a custom 3D tracking microscope to actively follow motion in three dimensions (3D) in live cells. As a result, signal-to-noise is improved in the cellular milieu through the use of pulsed excitation and time-gated detection.

  6. Field programmable gate array-assigned complex-valued computation and its limits

    SciTech Connect (OSTI)

    Bernard-Schwarz, Maria, E-mail: maria.bernardschwarz@ni.com [National Instruments, Ganghoferstrasse 70b, 80339 Munich (Germany); Institute of Applied Physics, TU Wien, Wiedner Hauptstrasse 8, 1040 Wien (Austria); Zwick, Wolfgang; Klier, Jochen [National Instruments, Ganghoferstrasse 70b, 80339 Munich (Germany); Wenzel, Lothar [National Instruments, 11500 N MOPac Expy, Austin, Texas 78759 (United States); Grschl, Martin [Institute of Applied Physics, TU Wien, Wiedner Hauptstrasse 8, 1040 Wien (Austria)

    2014-09-15

    We discuss how leveraging Field Programmable Gate Array (FPGA) technology as part of a high performance computing platform reduces latency to meet the demanding real time constraints of a quantum optics simulation. Implementations of complex-valued operations using fixed point numeric on a Virtex-5 FPGA compare favorably to more conventional solutions on a central processing unit. Our investigation explores the performance of multiple fixed point options along with a traditional 64 bits floating point version. With this information, the lowest execution times can be estimated. Relative error is examined to ensure simulation accuracy is maintained.

  7. Gate Access

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    to the laboratory. Visitors from outside the U.S. should be prepared to show a valid passport. See Access to the ALS for additional information about visitor procedures at the...

  8. GATING CIRCUITS

    DOE Patents [OSTI]

    Merrill, L.C.

    1958-10-14

    Control circuits for vacuum tubes are described, and a binary counter having an improved trigger circuit is reported. The salient feature of the binary counter is the application of the input signal to the cathode of each of two vacuum tubes through separate capacitors and the connection of each cathode to ground through separate diodes. The control of the binary counter is achieved in this manner without special pulse shaping of the input signal. A further advantage of the circuit is the simplicity and minimum nuruber of components required, making its use particularly desirable in computer machines.

  9. Terahertz signal detection in a short gate length field-effect transistor with a two-dimensional electron gas

    SciTech Connect (OSTI)

    Vostokov, N. V. Shashkin, V. I.

    2015-11-28

    We consider the problem of non-resonant detection of terahertz signals in a short gate length field-effect transistor having a two-dimensional electron channel with zero external bias between the source and the drain. The channel resistance, gate-channel capacitance, and quadratic nonlinearity parameter of the transistor during detection as a function of the gate bias voltage are studied. Characteristics of detection of the transistor connected in an antenna with real impedance are analyzed. The consideration is based on both a simple one-dimensional model of the transistor and allowance for the two-dimensional distribution of the electric field in the transistor structure. The results given by the different models are discussed.

  10. Extremely scaled high-k/In?.??Ga?.??As gate stacks with low leakage and low interface trap densities

    SciTech Connect (OSTI)

    Chobpattana, Varistha; Mikheev, Evgeny; Zhang, Jack Y.; Mates, Thomas E.; Stemmer, Susanne

    2014-09-28

    Highly scaled gate dielectric stacks with low leakage and low interface trap densities are required for complementary metal-oxide-semiconductor technology with III-V semiconductor channels. Here, we show that a novel pre-deposition technique, consisting of alternating cycles of nitrogen plasma and tetrakis(dimethylamino)titanium, allows for HfO? and ZrO? gate stacks with extremely high accumulation capacitance densities of more than 5 ?F/cm? at 1 MHz, low leakage current, low frequency dispersion, and low midgap interface trap densities (10cm?eV?range). Using x-ray photoelectron spectroscopy, we show that the interface contains TiO? and small quantities of In?O?, but no detectable Ga- or As-oxides, or As-As bonding. The results allow for insights into the microscopic mechanisms that control leakage and frequency dispersion in high-k/III-V gate stacks.

  11. Direct probing of electron and hole trapping into nano-floating-gate in organic field-effect transistor nonvolatile memories

    SciTech Connect (OSTI)

    Cui, Ze-Qun; Wang, Shun; Chen, Jian-Mei; Gao, Xu; Dong, Bin E-mail: chilf@suda.edu.cn Chi, Li-Feng E-mail: chilf@suda.edu.cn Wang, Sui-Dong E-mail: chilf@suda.edu.cn

    2015-03-23

    Electron and hole trapping into the nano-floating-gate of a pentacene-based organic field-effect transistor nonvolatile memory is directly probed by Kelvin probe force microscopy. The probing is straightforward and non-destructive. The measured surface potential change can quantitatively profile the charge trapping, and the surface characterization results are in good accord with the corresponding device behavior. Both electrons and holes can be trapped into the nano-floating-gate, with a preference of electron trapping than hole trapping. The trapped charge quantity has an approximately linear relation with the programming/erasing gate bias, indicating that the charge trapping in the device is a field-controlled process.

  12. Physics of gate leakage current in N-polar InAlN/GaN heterojunction field effect transistors

    SciTech Connect (OSTI)

    Goswami, Arunesh; Trew, Robert J.; Bilbro, Griff L.

    2014-10-28

    A physics based model of the gate leakage current in N-polar InAlN/GaN heterojunction field effect transistors is demonstrated. The model is based on the space charge limited current flow dominated by the effects of deep traps in the InAlN surface layer. The model predicts accurately the gate-leakage measurement data of the N-polar InAlN/GaN device with InAlN cap layer. In the pinch-off state, the gate leakage current conduction through the surface of the device in the drain access region dominates the current flow through the two dimensional electron gas channel. One deep trap level and two levels of shallow traps are extracted by fitting the model results with measurement data.

  13. Solution processed lanthanum aluminate gate dielectrics for use in metal oxide-based thin film transistors

    SciTech Connect (OSTI)

    Esro, M.; Adamopoulos, G.; Mazzocco, R.; Kolosov, O.; Krier, A.; Vourlias, G.; Milne, W. I.

    2015-05-18

    We report on ZnO-based thin-film transistors (TFTs) employing lanthanum aluminate gate dielectrics (La{sub x}Al{sub 1−x}O{sub y}) grown by spray pyrolysis in ambient atmosphere at 440 °C. The structural, electronic, optical, morphological, and electrical properties of the La{sub x}Al{sub 1−x}O{sub y} films and devices as a function of the lanthanum to aluminium atomic ratio were investigated using a wide range of characterization techniques such as UV-visible absorption spectroscopy, impedance spectroscopy, spectroscopic ellipsometry, atomic force microscopy, x-ray diffraction, and field-effect measurements. As-deposited LaAlO{sub y} dielectrics exhibit a wide band gap (∼6.18 eV), high dielectric constant (k ∼ 16), low roughness (∼1.9 nm), and very low leakage currents (<3 nA/cm{sup 2}). TFTs employing solution processed LaAlO{sub y} gate dielectrics and ZnO semiconducting channels exhibit excellent electron transport characteristics with hysteresis-free operation, low operation voltages (∼10 V), high on/off current modulation ratio of >10{sup 6}, subthreshold swing of ∼650 mV dec{sup −1}, and electron mobility of ∼12 cm{sup 2} V{sup −1} s{sup −1}.

  14. Stem thrust prediction model for W-K-M double wedge parallel expanding gate valves

    SciTech Connect (OSTI)

    Eldiwany, B.; Alvarez, P.D.; Wolfe, K.

    1996-12-01

    An analytical model for determining the required valve stem thrust during opening and closing strokes of W-K-M parallel expanding gate valves was developed as part of the EPRI Motor-Operated Valve Performance Prediction Methodology (EPRI MOV PPM) Program. The model was validated against measured stem thrust data obtained from in-situ testing of three W-K-M valves. Model predictions show favorable, bounding agreement with the measured data for valves with Stellite 6 hardfacing on the disks and seat rings for water flow in the preferred flow direction (gate downstream). The maximum required thrust to open and to close the valve (excluding wedging and unwedging forces) occurs at a slightly open position and not at the fully closed position. In the nonpreferred flow direction, the model shows that premature wedging can occur during {Delta}P closure strokes even when the coefficients of friction at different sliding surfaces are within the typical range. This paper summarizes the model description and comparison against test data.

  15. Top-gate organic depletion and inversion transistors with doped channel and injection contact

    SciTech Connect (OSTI)

    Liu, Xuhai; Kasemann, Daniel Leo, Karl

    2015-03-09

    Organic field-effect transistors constitute a vibrant research field and open application perspectives in flexible electronics. For a commercial breakthrough, however, significant performance improvements are still needed, e.g., stable and high charge carrier mobility and on-off ratio, tunable threshold voltage, as well as integrability criteria such as n- and p-channel operation and top-gate architecture. Here, we show pentacene-based top-gate organic transistors operated in depletion and inversion regimes, realized by doping source and drain contacts as well as a thin layer of the transistor channel. By varying the doping concentration and the thickness of the doped channel, we control the position of the threshold voltage without degrading on-off ratio or mobility. Capacitance-voltage measurements show that an inversion channel can indeed be formed, e.g., an n-doped channel can be inverted to a p-type inversion channel with highly p-doped contacts. The Cytop polymer dielectric minimizes hysteresis, and the transistors can be biased for prolonged cycles without a shift of threshold voltage, indicating excellent operation stability.

  16. Energy-Efficient and Secure S-Box circuit using Symmetric Pass Gate Adiabatic Logic

    SciTech Connect (OSTI)

    Kumar, Dinesh; Mohammad, Azhar; Singh, Vijay; Perumalla, Kalyan S

    2016-01-01

    Differential Power Analysis (DPA) attack is considered to be a main threat while designing cryptographic processors. In cryptographic algorithms like DES and AES, S-Box is used to indeterminate the relationship between the keys and the cipher texts. However, S-box is prone to DPA attack due to its high power consumption. In this paper, we are implementing an energy-efficient 8-bit S-Box circuit using our proposed Symmetric Pass Gate Adiabatic Logic (SPGAL). SPGAL is energy-efficient as compared to the existing DPAresistant adiabatic and non-adiabatic logic families. SPGAL is energy-efficient due to reduction of non-adiabatic loss during the evaluate phase of the outputs. Further, the S-Box circuit implemented using SPGAL is resistant to DPA attacks. The results are verified through SPICE simulations in 180nm technology. SPICE simulations show that the SPGAL based S-Box circuit saves upto 92% and 67% of energy as compared to the conventional CMOS and Secured Quasi-Adiabatic Logic (SQAL) based S-Box circuit. From the simulation results, it is evident that the SPGAL based circuits are energy-efficient as compared to the existing DPAresistant adiabatic and non-adiabatic logic families. In nutshell, SPGAL based gates can be used to build secure hardware for lowpower portable electronic devices and Internet-of-Things (IoT) based electronic devices.

  17. Oxygen Displacement in Cuprates under IonicLiquid Field-Effect Gating

    DOE PAGES-Beta [OSTI]

    Dubuis, Guy; Yacoby, Yizhak; Zhou, Hua; He, Xi; Bollinger, Anthony T.; Pavuna, Davor; Pindak, Ron; Bozovic, Ivan

    2016-08-15

    We studied structural changes in a 5 unit cell thick La1.96Sr0.04CuO4 film, epitaxially grown on a LaSrAlO4 substrate with a single unit cell buffer layer, when ultra-high electric fields were induced in the film by applying a gate voltage between the film and an ionic liquid in contact with it. Measuring the diffraction intensity along the substrate-defined Bragg rods and analyzing the results using a phase retrieval method we obtained the three-dimensional electron density in the film, buffer layer, and topmost atomic layers of the substrate under different applied gate voltages. The main structural observations were: (i) there were nomore » structural changes when the voltage was negative, holes were injected into the film making it more metallic and screening the electric field; (ii) when the voltage was positive, the film was depleted of holes becoming more insulating, the electric field extended throughout the film, the partial surface monolayer became disordered, and planar oxygen atoms were displaced towards the sample surface; (iii) the changes in surface disorder and the oxygen displacements were both reversed when a negative voltage was applied; and (iv) the c-axis lattice constant of the film did not change in spite of the displacement of planar oxygen atoms.« less

  18. Kinetic gating mechanism of DNA damage recognition by Rad4/XPC

    DOE PAGES-Beta [OSTI]

    Chen, Xuejing; Velmurugu, Yogambigai; Zheng, Guanqun; Park, Beomseok; Shim, Yoonjung; Kim, Youngchang; Liu, Lili; Van Houten, Bennett; He, Chuan; Ansari, Anjum; et al

    2015-01-06

    The xeroderma pigmentosum C (XPC) complex initiates nucleotide excision repair by recognizing DNA lesions before recruiting downstream factors. How XPC detects structurally diverse lesions embedded within normal DNA is unknown. Here we present a crystal structure that captures the yeast XPC orthologue (Rad4) on a single register of undamaged DNA. The structure shows that a disulphide-tethered Rad4 flips out normal nucleotides and adopts a conformations similar to that seen with damaged DNA. Contrary to many DNA repair enzymes that can directly reject non-target sites as structural misfits, our results suggest that Rad4/XPC uses a kinetic gating mechanism whereby lesion selectivitymore » arises from the kinetic competition between DNA opening and the residence time of Rad4/XPC per site. This mechanism is further supported by measurements of Rad4-induced lesion-opening times using temperature-jump pertubation spectroscopy. Kinetic gating may be a general mechanism used by site-specific DNA-binding proteins to minimize time-consuming interrogations of non-target sites.« less

  19. As you prepare for your upcoming beam time, please be aware that construction is planned to update SLAC Gate 17 with RFID proximity card access hardware and to change the stairs next to the Security hut to an ADA compliant ramp. Please forward this to your proposal collaborators (and ensure that all users have registered and completed training before they arrive). This construction is scheduled to begin Tuesday 5/28 and be completed by 6/28. During this construction, access to the LCLS and SSRL buildings and experimental facilities will be provided as follows: VEHICLES ONLY THROUGH GATE 17 5/28-6/28 0600-1530 (6 am-3:30 pm) Construction Zone. Only VEHICLE traffic will be allowed access through Gate 17 and flagman will provide traffic control. 1530-1800 (3:30-6:00 pm) Assumes construction will have stopped for the day; both traffic lanes will be open for vehicles. 1800-0600 (6 pm-6 am) As now, Gate 17 will be closed or barricaded overnight. PEDESTRIANS ONLY THROUGH GATE 16 5/28-6/28 The pedestrian turnstile at Gate 16A will not change. The turnstile is available for pedestrian use 24/7 as long as the individual has a valid SLAC ID badge (and there is a guard at Gate 30 to 'buzz' them through). 0700-1600 (6 am-4 pm) Pedestrians who would normally walk through Gate 17 will instead follow the detour to Gate 16 swing gate which will be unlocked and staffed by Security. A valid SLAC ID badge is needed to enter; new users without IDs will be allowed to proceed for check-in and badging after confirmation with the User Research Administration Office (see detour map attached). FYI - After the construction is completed and proximity card readers are fully functional, users and staff will enter Gates 17 and 30 using an activated RFID proximity card. More details to follow.

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Automated Proximity Access at Gate 17 and Sector 30 New SLAC ID badges with embedded RFID are used to activate these gates and for off-hours access at the main entrance off Sand Hill Road as well as Alpine Road (gates will be accessible 24/7) . New user badges include this proximity gate activation feature, but older photo IDs need to be updated. Users are advised to register, complete training and contact the User Research Administration (URA) office before arrival for beam time to help

  20. Quantifying Cradle-to-Farm Gate Life Cycle Impacts Associated with Fertilizer used for Corn, Soybean, and Stover Production

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Renewable Energy Laboratory Innovation for Our Energy Future A national laboratory of the U.S. Department of Energy Office of Energy Efficiency & Renewable Energy NREL is operated by Midwest Research Institute ● Battelle Contract No. DE-AC36-99-GO10337 Technical Report NREL/TP-510-37500 May 2005 Quantifying Cradle-to-Farm Gate Life-Cycle Impacts Associated with Fertilizer Used for Corn, Soybean, and Stover Production Susan E. Powers Quantifying Cradle-to-Farm Gate Life Cycle Impacts

  1. Update and Expansion of the Center of Automotive Technology Excellence Under the Graduate Automotive Technology Education (GATE) Program at the University of Tennessee, Knoxville

    SciTech Connect (OSTI)

    Irick, David

    2012-08-30

    The Graduate Automotive Technology Education (GATE) Center at the University of Tennessee, Knoxville has completed its seventh year of operation under this agreement, its thirteenth year in total. During this period the Center has involved eleven GATE Fellows and three GATE Research Assistants in preparing them to contribute to advanced automotive technologies in the centers focus area: Advanced Hybrid Propulsion and Control Systems. In addition to the impact that the Center has had on the students and faculty involved, the presence of the center has led to the acquisition of resources that probably would not have been obtained if the GATE Center had not existed. Significant industry interaction such as equipment donations, and support for GATE students has been realized. The value of the total resources brought to the university (including related research contracts) exceeds $2,000,000.

  2. Tuning the metal-insulator crossover and magnetism in SrRuO3 by ionic gating

    DOE PAGES-Beta [OSTI]

    Yi, Hee Taek; Gao, Bin; Xie, Wei; Cheong, Sang -Wook; Podzorov, Vitaly

    2014-10-13

    Reversible control of charge transport and magnetic properties without degradation is a key for device applications of transition metal oxides. Chemical doping during the growth of transition metal oxides can result in large changes in physical properties, but in most of the cases irreversibility is an inevitable constraint. We report a reversible control of charge transport, metal-insulator crossover and magnetism in field-effect devices based on ionically gated archetypal oxide system - SrRuO3. In these thin-film devices, the metal-insulator crossover temperature and the onset of magnetoresistance can be continuously and reversibly tuned in the range 90–250 K and 70–100 K, respectively,more » by application of a small gate voltage. We infer that a reversible diffusion of oxygen ions in the oxide lattice dominates the response of these materials to the gate electric field. These findings provide critical insights into both the understanding of ionically gated oxides and the development of novel applications.« less

  3. Graduate Automotive Technology Education (GATE) Program: Center of Automotive Technology Excellence in Advanced Hybrid Vehicle Technology at West Virginia University

    SciTech Connect (OSTI)

    Nigle N. Clark

    2006-12-31

    This report summarizes the technical and educational achievements of the Graduate Automotive Technology Education (GATE) Center at West Virginia University (WVU), which was created to emphasize Advanced Hybrid Vehicle Technology. The Center has supported the graduate studies of 17 students in the Department of Mechanical and Aerospace Engineering and the Lane Department of Computer Science and Electrical Engineering. These students have addressed topics such as hybrid modeling, construction of a hybrid sport utility vehicle (in conjunction with the FutureTruck program), a MEMS-based sensor, on-board data acquisition for hybrid design optimization, linear engine design and engine emissions. Courses have been developed in Hybrid Vehicle Design, Mobile Source Powerplants, Advanced Vehicle Propulsion, Power Electronics for Automotive Applications and Sensors for Automotive Applications, and have been responsible for 396 hours of graduate student coursework. The GATE program also enhanced the WVU participation in the U.S. Department of Energy Student Design Competitions, in particular FutureTruck and Challenge X. The GATE support for hybrid vehicle technology enhanced understanding of hybrid vehicle design and testing at WVU and encouraged the development of a research agenda in heavy-duty hybrid vehicles. As a result, WVU has now completed three programs in hybrid transit bus emissions characterization, and WVU faculty are leading the Transportation Research Board effort to define life cycle costs for hybrid transit buses. Research and enrollment records show that approximately 100 graduate students have benefited substantially from the hybrid vehicle GATE program at WVU.

  4. Dirac point and transconductance of top-gated graphene field-effect transistors operating at elevated temperature

    SciTech Connect (OSTI)

    Hopf, T.; Vassilevski, K. V., E-mail: k.vasilevskiy@ncl.ac.uk; Escobedo-Cousin, E.; King, P. J.; Wright, N. G.; O'Neill, A. G.; Horsfall, A. B.; Goss, J. P. [School of Electrical and Electronic Engineering, Newcastle University, Newcastle upon Tyne NE1 7RU (United Kingdom); Wells, G. H.; Hunt, M. R. C. [Department of Physics, Durham University, Durham DH1 3LE (United Kingdom)

    2014-10-21

    Top-gated graphene field-effect transistors (GFETs) have been fabricated using bilayer epitaxial graphene grown on the Si-face of 4H-SiC substrates by thermal decomposition of silicon carbide in high vacuum. Graphene films were characterized by Raman spectroscopy, Atomic Force Microscopy, Scanning Tunnelling Microscopy, and Hall measurements to estimate graphene thickness, morphology, and charge transport properties. A 27?nm thick Al?O? gate dielectric was grown by atomic layer deposition with an e-beam evaporated Al seed layer. Electrical characterization of the GFETs has been performed at operating temperatures up to 100?C limited by deterioration of the gate dielectric performance at higher temperatures. Devices displayed stable operation with the gate oxide dielectric strength exceeding 4.5 MV/cm at 100?C. Significant shifting of the charge neutrality point and an increase of the peak transconductance were observed in the GFETs as the operating temperature was elevated from room temperature to 100?C.

  5. Magnetoelectric effects and valley-controlled spin quantum gates in transition metal dichalcogenide bilayers

    SciTech Connect (OSTI)

    Gong, Zhirui; Liu, G. B.; Yu, Hongyi; Xiao, Di; Cui, Xiaodong; Xu, Xiaodong; Yao, Wang

    2013-01-01

    In monolayer group-VI transition metal dichalcogenides, charge carriers have spin and valley degrees of freedom, both associated with magnetic moments. On the other hand, the layer degree of freedom in multilayers is associated with electrical polarization. Here we show that transition metal dichalcogenide bilayers offer an unprecedented platform to realize a strong coupling between the spin, valley and layer pseudospin of holes. Such coupling gives rise to the spin Hall effect and spin-dependent selection rule for optical transitions in inversion symmetric bilayer and leads to a variety of magnetoelectric effects permitting quantum manipulation of these electronic degrees of freedom. Oscillating electric and magnetic fields can both drive the hole spin resonance where the two fields have valley-dependent interference, making an interplay between the spin and valley as information carriers possible for potential valley-spintronic applications. We show how to realize quantum gates on the spin qubit controlled by the valley bit.

  6. A digital optical phase-locked loop for diode lasers based on field programmable gate array

    SciTech Connect (OSTI)

    Xu Zhouxiang; Zhang Xian; Huang Kaikai; Lu Xuanhui

    2012-09-15

    We have designed and implemented a highly digital optical phase-locked loop (OPLL) for diode lasers in atom interferometry. The three parts of controlling circuit in this OPLL, including phase and frequency detector (PFD), loop filter and proportional integral derivative (PID) controller, are implemented in a single field programmable gate array chip. A structure type compatible with the model MAX9382/MCH12140 is chosen for PFD and pipeline and parallelism technology have been adapted in PID controller. Especially, high speed clock and twisted ring counter have been integrated in the most crucial part, the loop filter. This OPLL has the narrow beat note line width below 1 Hz, residual mean-square phase error of 0.14 rad{sup 2} and transition time of 100 {mu}s under 10 MHz frequency step. A main innovation of this design is the completely digitalization of the whole controlling circuit in OPLL for diode lasers.

  7. A New Gated X-Ray Detector for the Orion Laser Facility

    SciTech Connect (OSTI)

    Clark, David D.; Aragonez, Robert J.; Archuleta, Thomas N.; Fatherley, Valerie E.; Hsu, Albert H.; Jorgenson, H. J.; Mares, Danielle; Oertel, John A.; Oades, Kevin; Kemshall, Paul; Thomas, Philip; Young, Trevor; Pederson, Neal

    2012-08-08

    Gated X-Ray Detectors (GXD) are considered the work-horse target diagnostic of the laser based inertial confinement fusion (ICF) program. Recently, Los Alamos National Laboratory (LANL) has constructed three new GXDs for the Orion laser facility at the Atomic Weapons Establishment (AWE) in the United Kingdom. What sets these three new instruments apart from the what has previously been constructed for the National Ignition Facility (NIF) at Lawrence Livermore National Laboratory (LLNL) is: improvements in detector head microwave transmission lines, solid state embedded hard drive and updated control software, and lighter air box design and other incremental mechanical improvements. In this paper we will present the latest GXD design enhancements and sample calibration data taken on the Trident laser facility at Los Alamos National Laboratory using the newly constructed instruments.

  8. Short range, ultra-wideband radar with high resolution swept range gate

    DOE Patents [OSTI]

    McEwan, Thomas E.

    1998-05-26

    A radar range finder and hidden object locator is based on ultra-wide band radar with a high resolution swept range gate. The device generates an equivalent time amplitude scan with a typical range of 4 inches to 20 feet, and an analog range resolution as limited by a jitter of on the order of 0.01 inches. A differential sampling receiver is employed to effectively eliminate ringing and other aberrations induced in the receiver by the near proximity of the transmit antenna, so a background subtraction is not needed, simplifying the circuitry while improving performance. Uses of the invention include a replacement of ultrasound devices for fluid level sensing, automotive radar, such as cruise control and parking assistance, hidden object location, such as stud and rebar finding. Also, this technology can be used when positioned over a highway lane to collect vehicle count and speed data for traffic control.

  9. Short range, ultra-wideband radar with high resolution swept range gate

    DOE Patents [OSTI]

    McEwan, T.E.

    1998-05-26

    A radar range finder and hidden object locator is based on ultra-wide band radar with a high resolution swept range gate. The device generates an equivalent time amplitude scan with a typical range of 4 inches to 20 feet, and an analog range resolution as limited by a jitter of on the order of 0.01 inches. A differential sampling receiver is employed to effectively eliminate ringing and other aberrations induced in the receiver by the near proximity of the transmit antenna, so a background subtraction is not needed, simplifying the circuitry while improving performance. Uses of the invention include a replacement of ultrasound devices for fluid level sensing, automotive radar, such as cruise control and parking assistance, hidden object location, such as stud and rebar finding. Also, this technology can be used when positioned over a highway lane to collect vehicle count and speed data for traffic control. 14 figs.

  10. Ionizing radiation induced leakage current on ultra-thin gate oxides

    SciTech Connect (OSTI)

    Scarpa, A.; Paccagnella, A.; Montera, F.; Ghibaudo, G.; Pananakakis, G.; Fuochi, P.G.

    1997-12-01

    MOS capacitors with a 4.4 nm thick gate oxide have been exposed to {gamma} radiation from a Co{sup 60} source. As a result, the authors have measured a stable leakage current at fields lower than those required for Fowler-Nordheim tunneling. This Radiation Induced Leakage Current (RILC) is similar to the usual Stress Induced Leakage Currents (SILC) observed after electrical stresses of MOS devices. They have verified that these two currents share the same dependence on the oxide field, and the RILC contribution can be normalized to an equivalent injected charge for Constant Current Stresses. They have also considered the dependence of the RILC from the cumulative radiation dose, and from the applied bias during irradiation, suggesting a correlation between RILC and the distribution of trapped holes and neutral levels in the oxide layer.

  11. Ripple gate drive circuit for fast operation of series connected IGBTs

    DOE Patents [OSTI]

    Rockot, Joseph H.; Murray, Thomas W.; Bass, Kevin C.

    2005-09-20

    A ripple gate drive circuit includes a plurality of transistors having their power terminals connected in series across an electrical potential. A plurality of control circuits, each associated with one of the transistors, is provided. Each control circuit is responsive to a control signal and an optical signal received from at least one other control circuit for controlling the conduction of electrical current through the power terminals of the associated transistor. The control circuits are responsive to a first state of the control circuit for causing each transistor in series to turn on sequentially and responsive to a second state of the control signal for causing each transistor in series to turn off sequentially.

  12. On Field-Effect Photovoltaics: Gate Enhancement of the Power Conversion Efficiency in a Nanotube/Silicon-Nanowire Solar Cell

    SciTech Connect (OSTI)

    Petterson, Maureen K.; Lemaitre, Maxime G.; Shen, Yu; Wadhwa, Pooja; Hou, Jie; Vasilyeva, Svetlana V.; Kravchenko, Ivan I.; Rinzler, Andrew G.

    2015-09-09

    Recent years have seen a resurgence of interest in crystalline silicon Schottky junction solar cells distinguished by the use of low density of electronic states (DOS) nanocarbons (nanotubes, graphene) as the metal contacting the Si. Recently, unprecedented modulation of the power conversion efficiency in a single material system has been demonstrated in such cells by the use of electronic gating. The gate field induced Fermi level shift in the low-DOS carbon serves to enhance the junction built-in potential, while a gate field induced inversion layer at the Si surface, in regions remote from the junction, keeps the photocarriers well separated there, avoiding recombination at surface traps and defects (a key loss mechanism). Here, we extend these results into the third dimension of a vertical Si nanowire array solar cell. A single wall carbon nanotube layer engineered to contact virtually each n-Si nanowire tip extracts the minority carriers, while an ionic liquid electrolytic gate drives the nanowire body into inversion. The enhanced light absorption of the vertical forest cell, at 100 mW/cm2 AM1.5G illumination, results in a short-circuit current density of 35 mA/cm2 and associated power conversion efficiency of 15%. These results highlight the use of local fields as opposed to surface passivation as a means of avoiding front surface recombination. Finally, a deleterious electrochemical reaction of the silicon due to the electrolyte gating is shown to be caused by oxygen/water entrained in the ionic liquid electrolyte. While encapsulation can avoid the issue, a nonencapsulation-based approach is also implemented.

  13. On Field-Effect Photovoltaics: Gate Enhancement of the Power Conversion Efficiency in a Nanotube/Silicon-Nanowire Solar Cell

    DOE PAGES-Beta [OSTI]

    Petterson, Maureen K.; Lemaitre, Maxime G.; Shen, Yu; Wadhwa, Pooja; Hou, Jie; Vasilyeva, Svetlana V.; Kravchenko, Ivan I.; Rinzler, Andrew G.

    2015-09-09

    Recent years have seen a resurgence of interest in crystalline silicon Schottky junction solar cells distinguished by the use of low density of electronic states (DOS) nanocarbons (nanotubes, graphene) as the metal contacting the Si. Recently, unprecedented modulation of the power conversion efficiency in a single material system has been demonstrated in such cells by the use of electronic gating. The gate field induced Fermi level shift in the low-DOS carbon serves to enhance the junction built-in potential, while a gate field induced inversion layer at the Si surface, in regions remote from the junction, keeps the photocarriers well separatedmore » there, avoiding recombination at surface traps and defects (a key loss mechanism). Here, we extend these results into the third dimension of a vertical Si nanowire array solar cell. A single wall carbon nanotube layer engineered to contact virtually each n-Si nanowire tip extracts the minority carriers, while an ionic liquid electrolytic gate drives the nanowire body into inversion. The enhanced light absorption of the vertical forest cell, at 100 mW/cm2 AM1.5G illumination, results in a short-circuit current density of 35 mA/cm2 and associated power conversion efficiency of 15%. These results highlight the use of local fields as opposed to surface passivation as a means of avoiding front surface recombination. Finally, a deleterious electrochemical reaction of the silicon due to the electrolyte gating is shown to be caused by oxygen/water entrained in the ionic liquid electrolyte. While encapsulation can avoid the issue, a nonencapsulation-based approach is also implemented.« less

  14. Direct observation of bias-dependence potential distribution in metal/HfO{sub 2} gate stack structures by hard x-ray photoelectron spectroscopy under device operation

    SciTech Connect (OSTI)

    Yamashita, Y.; Yoshikawa, H.; Kobayashi, K.; Chikyo, T.

    2014-01-28

    Although gate stack structures with high-k materials have been extensively investigated, there are some issues to be solved for the formation of high quality gate stack structures. In the present study, we employed hard x-ray photoelectron spectroscopy in operating devices. This method allows us to investigate bias dependent electronic states, while keeping device structures intact. Using this method, we have investigated electronic states and potential distribution in gate metal/HfO{sub 2} gate stack structures under device operation. Analysis of the core levels shifts as a function of the bias voltage indicated that a potential drop occurred at the Pt/HfO{sub 2} interface for a Pt/HfO{sub 2} gate structure, while a potential gradient was not observed at the Ru/HfO{sub 2} interface for a Ru/HfO{sub 2} gate structure. Angle resolved photoelectron spectroscopy revealed that a thicker SiO{sub 2} layer was formed at the Pt/HfO{sub 2} interface, indicating that the origin of potential drop at Pt/HfO{sub 2} interface is formation of the thick SiO{sub 2} layer at the interface. The formation of the thick SiO{sub 2} layer at the metal/high-k interface might concern the Fermi level pinning, which is observed in metal/high-k gate stack structures.

  15. Gate-modulated weak anti-localization and carrier trapping in individual Bi{sub 2}Se{sub 3} nanoribbons

    SciTech Connect (OSTI)

    Wang, Li-Xian; Yan, Yuan; Liao, Zhi-Min Yu, Da-Peng

    2015-02-09

    We report a gate-voltage modulation on the weak anti-localization of individual topological insulator Bi{sub 2}Se{sub 3} nanoribbons. The phase coherence length decreases with decreasing the carrier density of the surface states on the bottom surface of the Bi{sub 2}Se{sub 3} nanoribbon as tuning the gate voltage from 0 to −100 V, indicating that the electron-electron interaction dominates the decoherence at low carrier density. Furthermore, we observe an abnormal conductance decline at positive gate voltage regime, which is ascribed to the capture of surface carriers by the trapping centers in the surface oxidation layer.

  16. Damage threshold and focusability of mid-infrared free-electron laser pulses gated by a plasma mirror with nanosecond switching pulses

    SciTech Connect (OSTI)

    Wang, Xiaolong; Nakajima, Takashi; Zen, Heishun; Kii, Toshiteru; Ohgaki, Hideaki

    2013-11-04

    The presence of a pulse train structure of an oscillator-type free-electron laser (FEL) results in the immediate damage of a solid target upon focusing. We demonstrate that the laser-induced damage threshold can be significantly improved by gating the mid-infrared FEL pulses with a plasma mirror. Although the switching pulses we employ have a nanosecond duration which does not guarantee the clean wavefront of the gated FEL pulses, the high focusability is experimentally confirmed through the observation of spectral broadening by a factor of 2.1 when we tightly focus the gated FEL pulses onto the Ge plate.

  17. Evaluation of delivered monitor unit accuracy of gated step-and-shoot IMRT using a two-dimensional detector array

    SciTech Connect (OSTI)

    Cheong, Kwang-Ho; Kang, Sei-Kwon; Lee, MeYeon; Kim, Su SSan; Park, SoAh; Hwang, Tae-Jin; Kim, Kyoung Ju; Oh, Do Hoon; Bae, Hoonsik; Suh, Tae-Suk

    2010-03-15

    Purpose: To overcome the problem of organ motion in intensity-modulated radiation therapy (IMRT), gated IMRT is often used for the treatment of lung cancer. In this study, the authors investigated the accuracy of the delivered monitor units (MUs) from each segment during gated IMRT using a two-dimensional detector array for user-specific verification purpose. Methods: The authors planned a 6 MV photon, seven-port step-and-shoot lung IMRT delivery. The respiration signals for gated IMRT delivery were obtained from the one-dimensional moving phantom using the real-time position management (RPM) system (Varian Medical Systems, Palo Alto, CA). The beams were delivered using a Clinac iX (Varian Medical Systems, Palo Alto, CA) with the Millennium 120 MLC. The MatriXX (IBA Dosimetry GmbH, Germany) was validated through consistency and reproducibility tests as well as comparison with measurements from a Farmer-type ion chamber. The authors delivered beams with varying dose rates and duty cycles and analyzed the MatriXX data to evaluate MU delivery accuracy. Results: There was quite good agreement between the planned segment MUs and the MUs computed from the MatriXX within {+-}2% error. The beam-on times computed from the MatriXX data were almost identical for all cases, and they matched well with the RPM beam-on and beam-off signals. A slight difference was observed between them, but it was less than 40 ms. The gated IMRT delivery demonstrated an MU delivery accuracy that was equivalent to ungated IMRT, and the delivered MUs with a gating signal agreed with the planned MUs within {+-}0.5 MU regardless of dose rate and duty cycle. Conclusions: The authors can conclude that gated IMRT is able to deliver an accurate dose to a patient during a procedure. The authors believe that the methodology and results can be transferred to other vendors' devices, particularly those that do not provide MLC log data for a verification purpose.

  18. Floating-Point Units and Algorithms for field-programmable gate arrays

    Energy Science and Technology Software Center (OSTI)

    2005-11-01

    The software that we are attempting to copyright is a package of floating-point unit descriptions and example algorithm implementations using those units for use in FPGAs. The floating point units are best-in-class implementations of add, multiply, divide, and square root floating-point operations. The algorithm implementations are sample (not highly flexible) implementations of FFT, matrix multiply, matrix vector multiply, and dot product. Together, one could think of the collection as an implementation of parts of themore » BLAS library or something similar to the FFTW packages (without the flexibility) for FPGAs. Results from this work has been published multiple times and we are working on a publication to discuss the techniques we use to implement the floating-point units, For some more background, FPGAS are programmable hardware. "Programs" for this hardware are typically created using a hardware description language (examples include Verilog, VHDL, and JHDL). Our floating-point unit descriptions are written in JHDL, which allows them to include placement constraints that make them highly optimized relative to some other implementations of floating-point units. Many vendors (Nallatech from the UK, SRC Computers in the US) have similar implementations, but our implementations seem to be somewhat higher performance. Our algorithm implementations are written in VHDL and models of the floating-point units are provided in VHDL as well. FPGA "programs" make multiple "calls" (hardware instantiations) to libraries of intellectual property (IP), such as the floating-point unit library described here. These programs are then compiled using a tool called a synthesizer (such as a tool from Synplicity, Inc.). The compiled file is a netlist of gates and flip-flops. This netlist is then mapped to a particular type of FPGA by a mapper and then a place- and-route tool. These tools assign the gates in the netlist to specific locations on the specific type of FPGA chip used

  19. Possible Dynamically Gated Conductance along Heme Wires in Bacterial Multiheme Cytochromes

    SciTech Connect (OSTI)

    Smith, Dayle MA; Rosso, Kevin M.

    2014-07-24

    The staggered cross decaheme configuration of electron transfer co-factors in the outer-membrane cytochrome MtrF may serve as a prototype for conformationally-gated multi-heme electron transport. Derived from the bacterium Shewanella oneidensis, the staggered cross configuration reveals intersecting c-type octaheme and tetraheme “wires” containing thermodynamic “hills” and “valleys”, suggesting that the protein structure may include a dynamical mechanism for conductance and pathway switching depending on enzymatic functional need. Recent molecular simulations have established the pair-wise electronic couplings, redox potentials, and reorganization energies to predict the maximum conductance along the various heme wire pathways by sequential hopping of a single electron (PNAS (2014) 11,611-616). Here, we expand this information with classical molecular and statistical mechanics calculations of large-amplitude protein dynamics in MtrF, to address its potential to modulate pathway conductance, including assessment of the effect of the total charge state. Explicit solvent molecular dynamics simulations of fully oxidized and fully reduced MtrF employing ten independent 50-ns simulations at 300 K and 1 atm showed that reduced MtrF is more expanded and explores more conformational space than oxidized MtrF, and that heme reduction leads to increased heme solvent exposure. The slowest mode of collective decaheme motion is 90% similar between the oxidized and reduced states, and consists primarily of inter-heme separation with minor rotational contributions. The frequency of this motion is 1.7×107 s 1 for fully-oxidized and fully-reduced MtrF, respectively, slower than the downhill electron transfer rates between stacked heme pairs at the octaheme termini and faster than the electron transfer rates between parallel hemes in the tetraheme chain. This implies that MtrF uses slow conformational fluctuations to modulate electron flow along the octaheme pathway

  20. Quantum Mechanical Calculations of Charge Effects on gating the KcsA channel

    SciTech Connect (OSTI)

    Kariev, Alisher M.; Znamenskiy, Vasiliy S.; Green, Michael E.

    2007-02-06

    The research described in this product was performed in part in the Environmental Molecular Sciences Laboratory, a national scientific user facility sponsored by the Department of Energy's Office of Biological and Environmental Research and located at Pacific Northwest National Laboratory. A series of ab initio (density functional) calculations were carried out on side chains of a set of amino acids, plus water, from the (intracellular) gating region of the KcsA K+ channel. Their atomic coordinates, except hydrogen, are known from X-ray structures [D.A. Doyle, J.M. Cabral, R.A. Pfuetzner, A. Kuo, J.M. Gulbis, S.L. Cohen, B.T. Chait, R. MacKinnon, The structure of the potassium channel: molecular basis of K+ conduction and selectivity, Science 280 (1998) 6977; R. MacKinnon, S.L. Cohen, A. Kuo, A. Lee, B.T. Chait, Structural conservation in prokaryotic and eukaryotic potassium channels, Science 280 (1998) 106109; Y. Jiang, A. Lee, J. Chen, M. Cadene, B.T. Chait, R. MacKinnon, The open pore conformation of potassium channels. Nature 417 (2001) 523526], as are the coordinates of some water oxygen atoms. The 1k4c structure is used for the starting coordinates. Quantum mechanical optimization, in spite of the starting configuration, places the atoms in positions much closer to the 1j95, more tightly closed, configuration. This state shows four water molecules forming a basket under the Q119 side chains, blocking the channel. When a hydrated K+ approaches this basket, the optimized system shows a strong set of hydrogen bonds with the K+ at defined positions, preventing further approach of the K+ to the basket. This optimized structure with hydrated K+ added shows an ice-like 12 molecule nanocrystal of water. If the water molecules exchange, unless they do it as a group, the channel will remain blocked. The basket itself appears to be very stable, although it is possible that the K+ with its hydrating water molecules may be more mobile, capable of withdrawing from

  1. Vehicle Technologies Office Merit Review 2015: GATE Center of Excellence at UAB for Lightweight Materials and Manufacturing for Automotive, Truck and Mass Transit

    Office of Energy Efficiency and Renewable Energy (EERE)

    Presentation given by University of Alabama Birmingham at 2015 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about GATE Center...

  2. Vehicle Technologies Office Merit Review 2014: GATE Center of Excellence at UAB for Lightweight Materials and Manufacturing for Automotive, Truck and Mass Transit

    Office of Energy Efficiency and Renewable Energy (EERE)

    Presentation given by University of Alabama at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about GATE Center of...

  3. Vehicle Technologies Office Merit Review 2014: GATE Center of Excellence at UAB for Lightweight Materials and Manufacturing for Automotive, Truck and Mass Transit

    Office of Energy Efficiency and Renewable Energy (EERE)

    Presentation given by University of Alabama at Birmingham at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about GATE...

  4. Palladium nanoparticle decorated silicon nanowire field-effect transistor with side-gates for hydrogen gas detection

    SciTech Connect (OSTI)

    Ahn, Jae-Hyuk; Yun, Jeonghoon; Park, Inkyu; KI for the NanoCentury, KAIST, Daejeon 305-701; Mobile Sensor and IT Convergence Center, KAIST, Daejeon 305-701 ; Choi, Yang-Kyu

    2014-01-06

    A silicon nanowire field-effect transistor (SiNW FET) with local side-gates and Pd surface decoration is demonstrated for hydrogen (H{sub 2}) detection. The SiNW FETs are fabricated by top-down method and functionalized with palladium nanoparticles (PdNPs) through electron beam evaporation for H{sub 2} detection. The drain current of the PdNP-decorated device reversibly responds to H{sub 2} at different concentrations. The local side-gates allow individual addressing of each sensor and enhance the sensitivity by adjusting the working region to the subthreshold regime. A control experiment using a non-functionalized device verifies that the hydrogen-sensitivity is originated from the PdNPs functionalized on the SiNW surface.

  5. Studies of scattering mechanisms in gate tunable InAs/(Al,Ga)Sb two dimensional electron gases

    SciTech Connect (OSTI)

    Shojaei, B.; McFadden, A.; Schultz, B. D.; Shabani, J.; Palmstrøm, C. J.

    2015-06-01

    A study of scattering mechanisms in gate tunable two dimensional electron gases confined to InAs/(Al,Ga)Sb heterostructures with varying interface roughness and dislocation density is presented. By integrating an insulated gate structure the evolution of the low temperature electron mobility and single-particle lifetime was determined for a previously unexplored density regime, 10{sup 11}–10{sup 12 }cm{sup −2}, in this system. Existing theoretical models were used to analyze the density dependence of the electron mobility and single particle lifetime in InAs quantum wells. Scattering was found to be dominated by charged dislocations and interface roughness. It was demonstrated that the growth of InAs quantum wells on nearly lattice matched GaSb substrate results in fewer dislocations, lower interface roughness, and improved low temperature transport properties compared to growth on lattice mismatched GaAs substrates.

  6. All-metallic electrically gated 2H-TaSe{sub 2} thin-film switches and logic circuits

    SciTech Connect (OSTI)

    Renteria, J.; Jiang, C.; Yan, Z.; Samnakay, R.; Goli, P.; Pope, T. R.; Salguero, T. T.; Wickramaratne, D.; Lake, R. K.; Khitun, A. G.; Balandin, A. A.

    2014-01-21

    We report the fabrication and performance of all-metallic three-terminal devices with tantalum diselenide thin-film conducting channels. For this proof-of-concept demonstration, the layers of 2H-TaSe{sub 2} were exfoliated mechanically from single crystals grown by the chemical vapor transport method. Devices with nanometer-scale thicknesses exhibit strongly non-linear current-voltage characteristics, unusual optical response, and electrical gating at room temperature. We have found that the drain-source current in thin-film 2H-TaSe{sub 2}Ti/Au devices reproducibly shows an abrupt transition from a highly resistive to a conductive state, with the threshold tunable via the gate voltage. Such current-voltage characteristics can be used, in principle, for implementing radiation-hard all-metallic logic circuits. These results may open new application space for thin films of van der Waals materials.

  7. Microsoft Word - Class_1_PMN_New_Gate_East_Fence_Line_09_09_15_rev. 11

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Kieling , Chief Hazardous Waste Bureau New Mexico Environment Department 2905 Rodeo Park Drive East, Building 1 Santa Fe, New Mexico 87505-6303 SEP 1 5 2015 Subject: Class 1 Permit Modification Notification to the Waste Isolation Pilot Plant Hazardous Waste Facility Permit Number: NM4890139088-TSDF Dear Mr. Kieling: Enclosed is a Notification of Class 1 Permit Modifications covering the following items: * Revise Attachment A4, Figure A4-2 to Add the New East Gate * Revise Attachment A4, Section

  8. A High Temperature Silicon Carbide mosfet Power Module With Integrated Silicon-On-Insulator-Based Gate Drive

    DOE PAGES-Beta [OSTI]

    Wang, Zhiqiang; Shi, Xiaojie; Tolbert, Leon M.; Wang, Fei Fred; Liang, Zhenxian; Costinett, Daniel; Blalock, Benjamin J.

    2014-04-30

    Here we present a board-level integrated silicon carbide (SiC) MOSFET power module for high temperature and high power density application. Specifically, a silicon-on-insulator (SOI)-based gate driver capable of operating at 200°C ambient temperature is designed and fabricated. The sourcing and sinking current capability of the gate driver are tested under various ambient temperatures. Also, a 1200 V/100 A SiC MOSFET phase-leg power module is developed utilizing high temperature packaging technologies. The static characteristics, switching performance, and short-circuit behavior of the fabricated power module are fully evaluated at different temperatures. Moreover, a buck converter prototype composed of the SOI gate drivermore » and SiC power module is built for high temperature continuous operation. The converter is operated at different switching frequencies up to 100 kHz, with its junction temperature monitored by a thermosensitive electrical parameter and compared with thermal simulation results. The experimental results from the continuous operation demonstrate the high temperature capability of the power module at a junction temperature greater than 225°C.« less

  9. Protonic/electronic hybrid oxide transistor gated by chitosan and its full-swing low voltage inverter applications

    SciTech Connect (OSTI)

    Chao, Jin Yu; Zhu, Li Qiang Xiao, Hui; Yuan, Zhi Guo

    2015-12-21

    Modulation of charge carrier density in condensed materials based on ionic/electronic interaction has attracted much attention. Here, protonic/electronic hybrid indium-zinc-oxide (IZO) transistors gated by chitosan based electrolyte were obtained. The chitosan-based electrolyte illustrates a high proton conductivity and an extremely strong proton gating behavior. The transistor illustrates good electrical performances at a low operating voltage of ∼1.0 V such as on/off ratio of ∼3 × 10{sup 7}, subthreshold swing of ∼65 mV/dec, threshold voltage of ∼0.3 V, and mobility of ∼7 cm{sup 2}/V s. Good positive gate bias stress stabilities are obtained. Furthermore, a low voltage driven resistor-loaded inverter was built by using an IZO transistor in series with a load resistor, exhibiting a linear relationship between the voltage gain and the supplied voltage. The inverter is also used for decreasing noises of input signals. The protonic/electronic hybrid IZO transistors have potential applications in biochemical sensors and portable electronics.

  10. Operating experience feedback report -- Pressure locking and thermal binding of gate valves. Commercial power reactors: Volume 9

    SciTech Connect (OSTI)

    Hsu, C.

    1993-03-01

    The potential for valve inoperability caused by pressure locking and thermal binding has been known for many years in the nuclear industry. Pressure locking or thermal binding is a common-mode failure mechanism that can prevent a gate valve from opening, and could render redundant trains of safety systems or multiple safety systems inoperable. In spite of numerous generic communications issued in the past by the Nuclear Regulatory Commission (NRC) and industry, pressure locking and thermal binding continues to occur to gate valves installed in safety-related systems of both boding water reactors (BWRs) and pressurized water reactors (PWRs). The generic communications to date have not led to effective industry action to fully identify, evaluate, and correct the problem. This report provides a review of operating events involving these failure mechanisms. As a result of this review this report: (1) identifies conditions when the failure mechanisms have occurred, (2) identifies the spectrum of safety systems that have been subjected to the failure mechanisms, and (3) identifies conditions that may introduce the failure mechanisms under both normal and accident conditions. On the basis of the evaluation of the operating events, the Office for Analysis and Evaluation of Operational Data (AEOD) of the NRC concludes that the binding problems with gate valves are an important safety issue that needs priority NRC and industry attention. This report also provides AEOD`s recommendation for actions to effectively prevent the occurrence of valve binding failures.

  11. Cryogenic on-chip multiplexer for the study of quantum transport in 256 split-gate devices

    SciTech Connect (OSTI)

    Al-Taie, H. Kelly, M. J.; Smith, L. W.; Xu, B.; Griffiths, J. P.; Beere, H. E.; Jones, G. A. C.; Ritchie, D. A.; Smith, C. G.; See, P.

    2013-06-17

    We present a multiplexing scheme for the measurement of large numbers of mesoscopic devices in cryogenic systems. The multiplexer is used to contact an array of 256 split gates on a GaAs/AlGaAs heterostructure, in which each split gate can be measured individually. The low-temperature conductance of split-gate devices is governed by quantum mechanics, leading to the appearance of conductance plateaux at intervals of 2e{sup 2}/h. A fabrication-limited yield of 94% is achieved for the array, and a “quantum yield” is also defined, to account for disorder affecting the quantum behaviour of the devices. The quantum yield rose from 55% to 86% after illuminating the sample, explained by the corresponding increase in carrier density and mobility of the two-dimensional electron gas. The multiplexer is a scalable architecture, and can be extended to other forms of mesoscopic devices. It overcomes previous limits on the number of devices that can be fabricated on a single chip due to the number of electrical contacts available, without the need to alter existing experimental set ups.

  12. Raman spectra and electron-phonon coupling in disordered graphene with gate-tunable doping

    SciTech Connect (OSTI)

    Childres, Isaac; Jauregui, Luis A.; Chen, Yong P.

    2014-12-21

    We report a Raman spectroscopy study of graphene field-effect transistors with a controlled amount of defects introduced in graphene by exposure to electron-beam irradiation. Raman spectra are taken at T = 8 K over a range of back gate voltages (V{sub g}) for various irradiation dosages (R{sub e}). We study effects in the Raman spectra due to V{sub g}-induced doping and artificially created disorder at various R{sub e}. With moderate disorder (irradiation), the Raman G peak with respect to the graphene carrier density (n{sub FE}) exhibits a minimum in peak frequency and a maximum in peak width near the charge-neutral point (CNP). These trends are similar to those seen in previous works on pristine graphene and have been attributed to a reduction of electron-phonon coupling strength (D) and removal of the Kohn anomaly as the Fermi level moves away from the CNP. We also observe a maximum in I{sub 2D}/I{sub G} and weak maximum in I{sub D}/I{sub G} near the CNP. All the observed dependences of Raman parameters on n{sub FE} weaken at stronger disorder (higher R{sub e}), implying that disorder causes a reduction of D as well. Our findings are valuable for understanding Raman spectra and electron-phonon physics in doped and disordered graphene.

  13. Proposal for a graphene-based all-spin logic gate

    SciTech Connect (OSTI)

    Su, Li; Zhao, Weisheng; Zhang, Yue; Querlioz, Damien; Klein, Jacques-Olivier; Dollfus, Philippe; Bournel, Arnaud; Zhang, Youguang

    2015-02-16

    In this work, we present a graphene-based all-spin logic gate (G-ASLG) that integrates the functionalities of perpendicular anisotropy magnetic tunnel junctions (p-MTJs) with spin transport in graphene-channel. It provides an ideal integration of logic and memory. The input and output states are defined as the relative magnetization between free layer and fixed layer of p-MTJs. They can be probed by the tunnel magnetoresistance and controlled by spin transfer torque effect. Using lateral non-local spin valve, the spin information is transmitted by the spin-current interaction through graphene channels. By using a physics-based spin current compact model, the operation of G-ASLG is demonstrated and its performance is analyzed. It allows us to evaluate the influence of parameters, such as spin injection efficiency, spin diffusion length, contact area, the device length, and their interdependence, and to optimize the energy and dynamic performance. Compared to other beyond-CMOS solutions, longer spin information transport length (∼μm), higher data throughput, faster computing speed (∼ns), and lower power consumption (∼μA) can be expected from the G-ASLG.

  14. Evaluation of soft-core processors on a Xilinx Virtex-5 field programmable gate array.

    SciTech Connect (OSTI)

    Learn, Mark Walter

    2011-04-01

    Node-based architecture (NBA) designs for future satellite projects hold the promise of decreasing system development time and costs, size, weight, and power and positioning the laboratory to address other emerging mission opportunities quickly. Reconfigurable field programmable gate array (FPGA)-based modules will comprise the core of several of the NBA nodes. Microprocessing capabilities will be necessary with varying degrees of mission-specific performance requirements on these nodes. To enable the flexibility of these reconfigurable nodes, it is advantageous to incorporate the microprocessor into the FPGA itself, either as a hard-core processor built into the FPGA or as a soft-core processor built out of FPGA elements. This document describes the evaluation of three reconfigurable FPGA-based soft-core processors for use in future NBA systems: the MicroBlaze (uB), the open-source Leon3, and the licensed Leon3. Two standard performance benchmark applications were developed for each processor. The first, Dhrystone, is a fixed-point operation metric. The second, Whetstone, is a floating-point operation metric. Several trials were run at varying code locations, loop counts, processor speeds, and cache configurations. FPGA resource utilization was recorded for each configuration.

  15. A novel solution to the gated x-ray detector gain droop problem

    SciTech Connect (OSTI)

    Oertel, J. A. Archuleta, T. N.

    2014-11-15

    Microchannel plate (MCP), microstrip transmission line based, gated x-ray detectors used at the premier ICF laser facilities have a drop in gain as a function of mircostrip length that can be greater than 50% over 40 mm. These losses are due to ohmic losses in a microstrip coating that is less than the optimum electrical skin depth. The electrical skin depth for a copper transmission line at 3 GHz is 1.2 μm while the standard microstrip coating thickness is roughly half a single skin depth. Simply increasing the copper coating thickness would begin filling the MCP pores and limit the number of secondary electrons created in the MCP. The current coating thickness represents a compromise between gain and ohmic loss. We suggest a novel solution to the loss problem by overcoating the copper transmission line with five electrical skin depths (∼6 μm) of Beryllium. Beryllium is reasonably transparent to x-rays above 800 eV and would improve the carrier current on the transmission line. The net result should be an optically flat photocathode response with almost no measurable loss in voltage along the transmission line.

  16. Radial-directed fluid-pressure-loaded all-metal-sealed gate valve

    DOE Patents [OSTI]

    Batzer, Thomas H.

    1992-01-01

    A large diameter gate valve uses a radially directed fluid pressure loaded all metal seal formed by engaging and disengaging a fixed and a moveable seal element. The fixed element is formed of a circular flange which contains a pressure chamber with a deformable wall, and is mounted to the valve body. The moving seal element contains an annular recess which mates with the circular flange, and is carried on a moveable sub-frame which moves on a frame fixed in the valve body. The valve opening defines an axis in a first direction, and the sub-frame moves through the valve body in a second direction which is substantially perpendicular to the first direction. The sub-frame and moveable seal element move in the second direction until the moveable element reaches a stop mounted in the valve body at which position the moveable element is aligned with but spaced apart from the fixed element. As the sub-frame continues to move in the second direction, the moveable element is forced to move toward and engage the fixed element. The pressure chamber in the flange is then pressurized to complete the seal.

  17. Flexible stainless steel hose liner used to rehab drain pipe for seal gates and outlet tubes

    SciTech Connect (OSTI)

    Sauer, S.J.; Monsanto, R. )

    1993-08-01

    Not unlike other dams, the Bureau of Reclamation's 6,500-MW Grand Coulee Dam in Washington State has a large amount of embedded piping, conduits, and drains. Typically, these features were constructed of ductile iron, cast iron, or carbon steel materials. Over the years, excessive internal corrosion of the drains for 102-inch ring seal gates and outlet tubes created leaks that required attention. Reclamation performed a number of temporary repairs before it became evident that the drain system must be rehabilitated. After considering several alternatives for rehabilitation, Reclamation selected stainless steel flexible hose liners for the job. Reclamation is satisfied with the performance of the stainless steel flexible hose liner. The total cost for installing the liners for nine drain lines (for three outlet tubes) was $15,000. Of that, materials cost $7,500, and labor and overhead cost $7,500. The inserts themselves cost from $640 for an 18-foot by 6-inch section. While this was not the least expensive option, it was the best choice for this job. The procedure will be repeated for other outlet tubes at Grand Coulee. Information used in this rehabilitation is being made available to other Reclamation projects.

  18. A voltage-gated pore for translocation of tRNA

    SciTech Connect (OSTI)

    Koley, Sandip; Adhya, Samit

    2013-09-13

    Highlights: A tRNA translocating complex was assembled from purified proteins. The complex translocates tRNA at a membrane potential of ?60 mV. Translocation requires Cys and His residues in the FeS center of RIC6 subunit. -- Abstract: Very little is known about how nucleic acids are translocated across membranes. The multi-subunit RNA Import Complex (RIC) from mitochondria of the kinetoplastid protozoon Leishmania tropica induces translocation of tRNAs across artificial or natural membranes, but the nature of the translocation pore remains unknown. We show that subunits RIC6 and RIC9 assemble on the membrane in presence of subunit RIC4A to form complex R3. Atomic Force Microscopy of R3 revealed particles with an asymmetric surface groove of ?20 nm rim diameter and ?1 nm depth. R3 induced translocation of tRNA into liposomes when the pH of the medium was lowered to ?6 in the absence of ATP. R3-mediated tRNA translocation could also be induced at neutral pH by a K{sup +} diffusion potential with an optimum of 6070 mV. Point mutations in the Cys{sub 2}His{sub 2} Fe-binding motif of RIC6, which is homologous to the respiratory Complex III FeS protein, abrogated import induced by low pH but not by K{sup +} diffusion potential. These results indicate that the R3 complex forms a pore that is gated by a proton-generated membrane potential and that the FeS binding region of RIC6 has a role in proton translocation. The tRNA import complex of L. tropica thus contains a novel macromolecular channel distinct from the mitochondrial protein import pore that is apparently involved in tRNA import in some species.

  19. An improved gate valve for critical applications in nuclear power plants

    SciTech Connect (OSTI)

    Kalsi, M.S.; Alvarez, P.D.; Wang, J.K.; Somagyi, D.

    1996-12-01

    U.S. Nuclear Regulatory Commission Generic Letters 89-10 for motor-operated valves (MOVs) and 95-07 for all power-operated valves document in detail the problems related to the performance of the safety-related valves in nuclear power plants. The problems relate to lack of reliable operation under design basis conditions including higher than anticipated stem thrust, unpredictable valve behavior, damage to the valve internals under blowdown/high flow conditions, significant degradation of performance when cycled under AP and flow, thermal binding, and pressure locking. This paper describes an improved motor-operated flexible wedge gate valve design, the GE Sentinel Valve, which is the outcome of a comprehensive and systematic development effort undertaken to resolve the issues identified in the NRC Generic Letters 89-10 and 95-07. The new design provides a reliable, long-term, low maintenance cost solution to the nuclear power industry. One of the key features incorporated in the disc permits the disc flexibility to be varied independently of the disc thickness (pressure boundary) dictated by the ASME Section III Pressure Vessel & Piping Code stress criteria. This feature allows the desired flexibility to be incorporated in the disc, thus eliminating thermal binding problems. A matrix of analyses was performed using finite element and computational fluid dynamics approaches to optimize design for stresses, flexibility, leak-tightness, fluid flow, and thermal effects. The design of the entire product line was based upon a consistent set of analyses and design rules which permit scaling to different valve sizes and pressure classes within the product line. The valve meets all of the ASME Section III Code design criteria and the N-Stamp requirements. The performance of the valve was validated by performing extensive separate effects and plant in-situ tests. This paper summarizes the key design features, analyses, and test results.

  20. High horizontal movements in longwall gate roads controlled by cable support systems

    SciTech Connect (OSTI)

    Dolinar, D.R.; Tadolini, S.C.; Blackwell, D.V.

    1996-12-01

    Controlling coal mine roofs subjected to high-horizontal stress conditions has always been difficult and uncertain. Traditional supports such as wooden cribs and posts, concrete donut cribs, and standing supports collapse and fail when the roof and floor move horizontally as mining progresses. The former U.S. Bureau of Mines (USBM) (currently the U.S. Department of Energy (DOE)), in cooperation with Western Fuels-Utah, Incorporated, conducted research to provide an alternative for traditional secondary support systems in a 3-entry gate road system subjected to high horizontal movements. The support system used in several other coal mine operations, consisted of internal high-strength galvanized resin-grouted cable supports. The system virtually eliminates the necessity for external crib, timber, or concrete supports. The support system consisted of 2.4 m (8 ft) full-column resin grouted bolts and 4.8 m (16 ft) long cable supports installed in conjunction with wire mesh and {open_quotes}Monster-Mats.{close_quotes} Cable loading and roof deformations were monitored to evaluate the behavior of the immediate and main roofs during first and second panel extractions. Additionally, cable trusses were installed on the longwall headgate to protect the coal conveyance system from roof and pillar falls created by the formation of cutters and gutters. The test results indicated that the designed support system successfully maintained the roof during the extraction of two longwall panels and dramatically reduced the cost of secondary support. This paper describes the theory of high-horizontal roof movements, the advantages of vertical cable supports and cable trusses, and presents the roof and cable measurements made to assess the support performance during longwall retreat mining.

  1. SU-E-J-144: Low Activity Studies of Carbon 11 Activation Via GATE Monte Carlo

    SciTech Connect (OSTI)

    Elmekawy, A; Ewell, L; Butuceanu, C; Qu, L

    2015-06-15

    Purpose: To investigate the behavior of a Monte Carlo simulation code with low levels of activity (∼1,000Bq). Such activity levels are expected from phantoms and patients activated via a proton therapy beam. Methods: Three different ranges for a therapeutic proton radiation beam were examined in a Monte Carlo simulation code: 13.5, 17.0 and 21.0cm. For each range, the decay of an equivalent length{sup 11}C source and additional sources of length plus or minus one cm was studied in a benchmark PET simulation for activities of 1000, 2000 and 3000Bq. The ranges were chosen to coincide with a previous activation study, and the activities were chosen to coincide with the approximate level of isotope creation expected in a phantom or patient irradiated by a therapeutic proton beam. The GATE 7.0 simulation was completed on a cluster node, running Scientific Linux Carbon 6 (Red Hat©). The resulting Monte Carlo data were investigated with the ROOT (CERN) analysis tool. The half-life of{sup 11}C was extracted via a histogram fit to the number of simulated PET events vs. time. Results: The average slope of the deviation of the extracted carbon half life from the expected/nominal value vs. activity showed a generally positive value. This was unexpected, as the deviation should, in principal, decrease with increased activity and lower statistical uncertainty. Conclusion: For activity levels on the order of 1,000Bq, the behavior of a benchmark PET test was somewhat unexpected. It is important to be aware of the limitations of low activity PET images, and low activity Monte Carlo simulations. This work was funded in part by the Philips corporation.

  2. Project W-320, 241-C-106 sluicing: Piping calculations. Volume 3

    SciTech Connect (OSTI)

    Bailey, J.W.

    1998-07-25

    This supporting document has been prepared to make the FDNW calculations for Project W-320 readily retrievable.

  3. Project W-320, 241-C-106 sluicing: Civil/structural calculations. Volume 1

    SciTech Connect (OSTI)

    Bailey, J.W.

    1998-07-28

    This supporting document has been prepared to make the FDNW civil/structural calculations for Project W-320 readily retrievable.

  4. Project management plan for Project W-320, Tank 241-C-106 sluicing

    SciTech Connect (OSTI)

    Phillips, D.R.

    1994-12-01

    This Project Management Plan establishes the organization, plans, and systems for management of Project W-320 as defined in DOE Order 4700.1, Project Management System (DOE 1987).

  5. Project W-320, 241-C-106 sluicing HVAC calculations, Volume 1

    SciTech Connect (OSTI)

    Bailey, J.W.

    1998-08-07

    This supporting document has been prepared to make the FDNW calculations for Project W-320, readily retrievable. The report contains the following calculations: Exhaust airflow sizing for Tank 241-C-106; Equipment sizing and selection recirculation fan; Sizing high efficiency mist eliminator; Sizing electric heating coil; Equipment sizing and selection of recirculation condenser; Chiller skid system sizing and selection; High efficiency metal filter shielding input and flushing frequency; and Exhaust skid stack sizing and fan sizing.

  6. Project W-320, 241-C-106 sluicing: Piping calculations. Volume 4

    SciTech Connect (OSTI)

    Bailey, J.W.

    1998-07-24

    This supporting document has been prepared to make the FDNW calculations for Project W-320 readily retrievable. The objective of this calculation is to perform the structural analysis of the Pipe Supports designed for Slurry and Supernate transfer pipe lines in order to meet the requirements of applicable ASME codes. The pipe support design loads are obtained from the piping stress calculations W320-27-I-4 and W320-27-I-5. These loads are the total summation of the gravity, pressure, thermal and seismic loads. Since standard typical designs are used for each type of pipe support such as Y-Stop, Guide and Anchors, each type of support is evaluated for the maximum loads to which this type of supports are subjected. These loads are obtained from the AutoPipe analysis and used to check the structural adequacy of these supports.

  7. Sensitivity analysis of sluicing-leak parameters for the 241-AX tank farm

    SciTech Connect (OSTI)

    Davis, J.D., Westinghouse Hanford

    1996-12-12

    The scope of this work was to analyze the sensitivity of contaminant fluxes from the vadose zone to the water table, to several parameters. Some of these parameters are controllable. The results were evaluated with respect to their sensitivity to the following types of parameters: hydrostratigraphy and hydraulic properties; volume, duration, and source area of leakage; simultaneous leakage from multiple tanks; pre-existing leaks; barriers to infiltration of meteoric water; and contaminant concentrations and geochemistry.

  8. Project W-320, 241-C-106 sluicing: Piping calculations. Volume 5

    SciTech Connect (OSTI)

    Bailey, J.W.

    1998-07-24

    This supporting document has been prepared to make the FDNW calculations for Project W-320 readily retrievable.

  9. Project W-320, 241-C-106 sluicing: Civil/structural calculations. Volume 8

    SciTech Connect (OSTI)

    Bailey, J.W.

    1998-07-23

    This supporting document has been prepared to make the FDNW civil/structural calculations for Project W-320 readily retrievable.

  10. Tank 241-C-106 waste retrieval sluicing system (WRSS) sluicer assembly test reports

    SciTech Connect (OSTI)

    May, T.H., Westinghouse Hanford

    1996-08-26

    The sluicer test report documents the results of the Project W-320 factory testing conducted at the Olympic Tool and Engineering facility. Included are background information, test goals, a brief discussion on the sluicer hose problem, and conclusions.

  11. Project W-320, 241-C-106 sluicing: Civil/structural calculations. Volume 3

    SciTech Connect (OSTI)

    Bailey, J.W.

    1998-07-24

    This supporting document has been prepared to make the FDNW civil/structural calculations for Project W-320 readily retrievable. The Equipment Removal System (ERS) has been identified by WHC as not having any safety class 1 items present in the tank pits during equipment removal activities, Documentation of this finding is provided in Letter of Instruction 3/1 Analysis Requirements for Project W-320 Equipment Removal System (REF: LOI KGS-94-013). Based on this specific direction from WHC, 3/1 analysis for any component of the Project W-320 ERS is required. No further documentation of non-safety impacting safety items is required per DOE-RL Audit finding No.90-02, and filing of this memorandum in the W-320 project files satisfies the intent of the referenced DOE observation.

  12. Fabrication of quantum dots in undoped Si/Si0.8Ge0.2 heterostructures using a single metal-gate layer

    DOE PAGES-Beta [OSTI]

    Lu, T. M.; Gamble, J. K.; Muller, R. P.; Nielsen, E.; Bethke, D.; Ten Eyck, G. A.; Pluym, T.; Wendt, J. R.; Dominguez, J.; Lilly, M. P.; et al

    2016-08-29

    Enhancement-mode Si/SiGe electron quantum dots have been pursued extensively by many groups for their potential in quantum computing. Most of the reported dot designs utilize multiple metal-gate layers and use Si/SiGe heterostructures with Ge concentration close to 30%. Here, we report the fabrication and low-temperature characterization of quantum dots in the Si/Si0.8Ge0.2 heterostructures using only one metal-gate layer. We find that the threshold voltage of a channel narrower than 1 μm increases as the width decreases. The higher threshold can be attributed to the combination of quantum confinement and disorder. We also find that the lower Ge ratio used heremore » leads to a narrower operational gate bias range. The higher threshold combined with the limited gate bias range constrains the device design of lithographic quantum dots. We incorporate such considerations in our device design and demonstrate a quantum dot that can be tuned from a single dot to a double dot. Furthermore, the device uses only a single metal-gate layer, greatly simplifying device design and fabrication.« less

  13. Method and infrastructure for cycle-reproducible simulation on large scale digital circuits on a coordinated set of field-programmable gate arrays (FPGAs)

    DOE Patents [OSTI]

    Asaad, Sameh W; Bellofatto, Ralph E; Brezzo, Bernard; Haymes, Charles L; Kapur, Mohit; Parker, Benjamin D; Roewer, Thomas; Tierno, Jose A

    2014-01-28

    A plurality of target field programmable gate arrays are interconnected in accordance with a connection topology and map portions of a target system. A control module is coupled to the plurality of target field programmable gate arrays. A balanced clock distribution network is configured to distribute a reference clock signal, and a balanced reset distribution network is coupled to the control module and configured to distribute a reset signal to the plurality of target field programmable gate arrays. The control module and the balanced reset distribution network are cooperatively configured to initiate and control a simulation of the target system with the plurality of target field programmable gate arrays. A plurality of local clock control state machines reside in the target field programmable gate arrays. The local clock state machines are configured to generate a set of synchronized free-running and stoppable clocks to maintain cycle-accurate and cycle-reproducible execution of the simulation of the target system. A method is also provided.

  14. Compact field programmable gate array-based pulse-sequencer and radio-frequency generator for experiments with trapped atoms

    SciTech Connect (OSTI)

    Pruttivarasin, Thaned; Katori, Hidetoshi

    2015-11-15

    We present a compact field-programmable gate array (FPGA) based pulse sequencer and radio-frequency (RF) generator suitable for experiments with cold trapped ions and atoms. The unit is capable of outputting a pulse sequence with at least 32 transistor-transistor logic (TTL) channels with a timing resolution of 40 ns and contains a built-in 100 MHz frequency counter for counting electrical pulses from a photo-multiplier tube. There are 16 independent direct-digital-synthesizers RF sources with fast (rise-time of ∼60 ns) amplitude switching and sub-mHz frequency tuning from 0 to 800 MHz.

  15. Stem thrust prediction model for Westinghouse wedge gate valves with linkage type stem-to-disk connection

    SciTech Connect (OSTI)

    Wang, J.K.; Sharma, V.; Kalsi, M.S.

    1996-12-01

    The Electric Power Research Institute (EPRI) conducted a comprehensive research program with the objective of providing nuclear utilities with analytical methods to predict motor operated valve (MOV) performance under design basis conditions. This paper describes the stem thrust calculation model developed for evaluating the performance of one such valve, the Westinghouse flexible wedge gate valve. These procedures account for the unique functional characteristics of this valve design. In addition, model results are compared to available flow loop and in situ test data as a basis for evaluating the performance of the valve model.

  16. Bell's Inequality and Universal Quantum Gates in a Cold-Atom Chiral Fermionic p-Wave Superfluid

    SciTech Connect (OSTI)

    Zhang Chuanwei; Tewari, Sumanta; Das Sarma, S.

    2007-11-30

    We propose and analyze a probabilistic scheme to entangle two spatially separated topological qubits in a p{sub x}+ip{sub y} superfluid using controlled collisions between atoms in movable dipole traps and unpaired atoms inside vortex cores in the superfluid. We discuss how to test the violation of Bell's inequality with the generated entanglement. A set of universal quantum gates is shown to be implementable deterministically using the entanglement despite the fact that the entangled states can be created only probabilistically.

  17. Understanding the Structure of High-K Gate Oxides - Oral Presentation

    SciTech Connect (OSTI)

    Miranda, Andre

    2015-08-25

    Hafnium Oxide (HfO2) amorphous thin films are being used as gate oxides in transistors because of their high dielectric constant (κ) over Silicon Dioxide. The present study looks to find the atomic structure of HfO2 thin films which hasn’t been done with the technique of this study. In this study, two HfO2 samples were studied. One sample was made with thermal atomic layer deposition (ALD) on top of a Chromium and Gold layer on a silicon wafer. The second sample was made with plasma ALD on top of a Chromium and Gold layer on a Silicon wafer. Both films were deposited at a thickness of 50nm. To obtain atomic structure information, Grazing Incidence X-ray diffraction (GIXRD) was carried out on the HfO2 samples. Because of this, absorption, footprint, polarization, and dead time corrections were applied to the scattering intensity data collected. The scattering curves displayed a difference in structure between the ALD processes. The plasma ALD sample showed the broad peak characteristic of an amorphous structure whereas the thermal ALD sample showed an amorphous structure with characteristics of crystalline materials. This appears to suggest that the thermal process results in a mostly amorphous material with crystallites within. Further, the scattering intensity data was used to calculate a pair distribution function (PDF) to show more atomic structure. The PDF showed atom distances in the plasma ALD sample had structure up to 10 Å, while the thermal ALD sample showed the same structure below 10 Å. This structure that shows up below 10 Å matches the bond distances of HfO2 published in literature. The PDF for the thermal ALD sample also showed peaks up to 20 Å, suggesting repeating atomic spacing outside the HfO2 molecule in the sample. This appears to suggest that there is some crystalline structure within the thermal ALD sample.

  18. Technical Feasibility Assessment of LED Roadway Lighting on the Golden Gate Bridge

    SciTech Connect (OSTI)

    Tuenge, Jason R.

    2012-09-01

    Subsequent to preliminary investigations by the Golden Gate Bridge Highway & Transportation District (GGB), in coordination with Pacific Gas & Electric (PG&E), the GATEWAY Demonstration program was asked to evaluate the technical feasibility of replacing existing roadway lighting on the bridge with products utilizing LED technology. GGB and PG&E also indicated interest in induction (i.e., electrodeless fluorescent) technology, since both light source types feature rated lifetimes significantly exceeding those of the existing high-pressure sodium (HPS) and low-pressure sodium (LPS) products. The goal of the study was to identify any solutions which would reduce energy use and maintenance without compromising the quantity or quality of existing illumination. Products used for roadway lighting on the historic bridge must be installed within the existing amber-lensed shoebox-style luminaire housings. It was determined that induction technology does not appear to represent a viable alternative for the roadway luminaires in this application; any energy savings would be attributable to a reduction in light levels. Although no suitable LED retrofit kits were identified for installation within existing luminaire housings, several complete LED luminaires were found to offer energy savings of 6-18%, suggesting custom LED retrofit kits could be developed to match or exceed the performance of the existing shoeboxes. Luminaires utilizing ceramic metal halide (CMH) were also evaluated, and some were found to offer 28% energy savings, but these products might actually increase maintenance due to the shorter rated lamp life. Plasma technology was evaluated, as well, but no suitable products were identified. Analysis provided in this report was completed in May 2012. Although LED technologies are expected to become increasingly viable over time, and product mock-ups may reveal near-term solutions, some options not currently considered by GGB may ultimately merit evaluation. For

  19. Current collapse imaging of Schottky gate AlGaN/GaN high electron mobility transistors by electric field-induced optical second-harmonic generation measurement

    SciTech Connect (OSTI)

    Katsuno, Takashi Ishikawa, Tsuyoshi; Ueda, Hiroyuki; Uesugi, Tsutomu; Manaka, Takaaki; Iwamoto, Mitsumasa

    2014-06-23

    Two-dimensional current collapse imaging of a Schottky gate AlGaN/GaN high electron mobility transistor device was achieved by optical electric field-induced second-harmonic generation (EFISHG) measurements. EFISHG measurements can detect the electric field produced by carriers trapped in the on-state of the device, which leads to current collapse. Immediately after (e.g., 1, 100, or 800 μs) the completion of drain-stress voltage (200 V) in the off-state, the second-harmonic (SH) signals appeared within 2 μm from the gate edge on the drain electrode. The SH signal intensity became weak with time, which suggests that the trapped carriers are emitted from the trap sites. The SH signal location supports the well-known virtual gate model for current collapse.

  20. Gate-tunable high mobility remote-doped InSb/In{sub 1−x}Al{sub x}Sb quantum well heterostructures

    SciTech Connect (OSTI)

    Yi, Wei E-mail: MSokolich@hrl.com; Kiselev, Andrey A.; Thorp, Jacob; Noah, Ramsey; Nguyen, Binh-Minh; Bui, Steven; Rajavel, Rajesh D.; Hussain, Tahir; Gyure, Mark F.; Sokolich, Marko E-mail: MSokolich@hrl.com; Kratz, Philip; Qian, Qi; Manfra, Michael J.; Pribiag, Vlad S.; Kouwenhoven, Leo P.; Marcus, Charles M.

    2015-04-06

    Gate-tunable high-mobility InSb/In{sub 1−x}Al{sub x}Sb quantum wells (QWs) grown on GaAs substrates are reported. The QW two-dimensional electron gas (2DEG) channel mobility in excess of 200 000 cm{sup 2}/V s is measured at T = 1.8 K. In asymmetrically remote-doped samples with an HfO{sub 2} gate dielectric formed by atomic layer deposition, parallel conduction is eliminated and complete 2DEG channel depletion is reached with minimal hysteresis in gate bias response of the 2DEG electron density. The integer quantum Hall effect with Landau level filling factor down to 1 is observed. A high-transparency non-alloyed Ohmic contact to the 2DEG with contact resistance below 1 Ω·mm is achieved at 1.8 K.

  1. Engineering evaluation/cost analysis for the proposed removal of contaminated materials at the Elza Gate site, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    Not Available

    1991-06-01

    This engineering evaluation/cost analysis (EE/CA) has been prepared in support of the proposed removal action for cleanup of radioactive and chemically contaminated soil at the Elza Gate site in Oak Ridge, Tennessee. This property became contaminated as a result of storage of ore residues, equipment, and other materials for the US Atomic Energy Commission. The US Department of Energy is responsible for cleanup of portions of the site under its Formerly Utilized Sites Remedial Action Program. In December 1990 an area known as Pad 1 was abrasively scoured to remove surface contamination, and in March 1991 removal of Pad 1 contamination was begun under a separate EE/CA. This EE/CA is intended to cover the remaining portions of the site for which the Department of Energy has responsibility. It has been determined that an EE/CA report is appropriate documentation for the proposed removal action. This EE/CA covers removal of contaminated soils and contaminated concrete rubble from the Elza Gate site. The primary objectives of this EE/CA report are to identify and describe the preferred removal action, and to document the selection of response activities that will mitigate the potential for release of contaminants from the property into the environment and that will minimize the associated threats to human health or welfare and the environment. The preferred alternative is disposition on the Oak Ridge Reservation. 30 refs., 7 figs., 12 tabs.

  2. Quantum transport of two-species Dirac fermions in dual-gated three-dimensional topological insulators

    DOE PAGES-Beta [OSTI]

    Xu, Yang; Miotkowski, Ireneusz; Chen, Yong P.

    2016-05-04

    Topological insulators are a novel class of quantum matter with a gapped insulating bulk, yet gapless spin-helical Dirac fermion conducting surface states. Here, we report local and non-local electrical and magneto transport measurements in dual-gated BiSbTeSe2 thin film topological insulator devices, with conduction dominated by the spatially separated top and bottom surfaces, each hosting a single species of Dirac fermions with independent gate control over the carrier type and density. We observe many intriguing quantum transport phenomena in such a fully tunable two-species topological Dirac gas, including a zero-magnetic-field minimum conductivity close to twice the conductance quantum at the doublemore » Dirac point, a series of ambipolar two-component half-integer Dirac quantum Hall states and an electron-hole total filling factor zero state (with a zero-Hall plateau), exhibiting dissipationless (chiral) and dissipative (non-chiral) edge conduction, respectively. As a result, such a system paves the way to explore rich physics, ranging from topological magnetoelectric effects to exciton condensation.« less

  3. Border trap reduction in Al{sub 2}O{sub 3}/InGaAs gate stacks

    SciTech Connect (OSTI)

    Tang, Kechao; McIntyre, Paul C.; Winter, Roy; Eizenberg, Moshe; Zhang, Liangliang; Droopad, Ravi

    2015-11-16

    The effect of Al{sub 2}O{sub 3} atomic layer deposition (ALD) temperature on the border trap density (N{sub bt}) of Al{sub 2}O{sub 3}/InGaAs gate stacks is investigated quantitatively, and we demonstrate that lowering the trimethylaluminum (TMA)/water vapor ALD temperature from 270 °C to 120 °C significantly reduces N{sub bt}. The reduction of N{sub bt} coincides with increased hydrogen incorporation in low temperature ALD-grown Al{sub 2}O{sub 3} films during post-gate metal forming gas annealing. It is also found that large-dose (∼6000 L) exposure of the In{sub 0.53}Ga{sub 0.47}As (100) surface to TMA immediately after thermal desorption of a protective As{sub 2} capping layer is an important step to guarantee the uniformity and reproducibility of high quality Al{sub 2}O{sub 3}/InGaAs samples made at low ALD temperatures.

  4. Nonvolatile “AND,” “OR,” and “NOT” Boolean logic gates based on phase-change memory

    SciTech Connect (OSTI)

    Li, Y.; Zhong, Y. P.; Deng, Y. F.; Zhou, Y. X.; Xu, L.; Miao, X. S.

    2013-12-21

    Electronic devices or circuits that can implement both logic and memory functions are regarded as the building blocks for future massive parallel computing beyond von Neumann architecture. Here we proposed phase-change memory (PCM)-based nonvolatile logic gates capable of AND, OR, and NOT Boolean logic operations verified in SPICE simulations and circuit experiments. The logic operations are parallel computing and results can be stored directly in the states of the logic gates, facilitating the combination of computing and memory in the same circuit. These results are encouraging for ultralow-power and high-speed nonvolatile logic circuit design based on novel memory devices.

  5. Gate-control efficiency and interface state density evaluated from capacitance-frequency-temperature mapping for GaN-based metal-insulator-semiconductor devices

    SciTech Connect (OSTI)

    Shih, Hong-An; Kudo, Masahiro; Suzuki, Toshi-kazu

    2014-11-14

    We present an analysis method for GaN-based metal-insulator-semiconductor (MIS) devices by using capacitance-frequency-temperature (C-f-T) mapping to evaluate the gate-control efficiency and the interface state density, both exhibiting correlations with the linear-region intrinsic transconductance. The effectiveness of the method was exemplified by application to AlN/AlGaN/GaN MIS devices to elucidate the properties of AlN-AlGaN interfaces depending on their formation processes. Using the C-f-T mapping, we extract the gate-bias-dependent activation energy with its derivative giving the gate-control efficiency, from which we evaluate the AlN-AlGaN interface state density through the Lehovec equivalent circuit in the DC limit. It is shown that the gate-control efficiency and the interface state density have correlations with the linear-region intrinsic transconductance, all depending on the interface formation processes. In addition, we give characterization of the AlN-AlGaN interfaces by using X-ray photoelectron spectroscopy, in relation with the results of the analysis.

  6. High performance TiN gate contact on AlGaN/GaN transistor using a mechanically strain induced P-doping

    SciTech Connect (OSTI)

    Soltani, A. Rousseau, M.; Gerbedoen, J.-C.; Bourzgui, N.; Mattalah, M.; Bonanno, P. L.; Ougazzaden, A.; Telia, A.; Patriarche, G.; BenMoussa, A.

    2014-06-09

    High performance titanium nitride sub-100 nm rectifying contact, deposited by sputtering on AlGaN/GaN high electron mobility transistors, shows a reverse leakage current as low as 38 pA/mm at V{sub GS} = −40 V and a Schottky barrier height of 0.95 eV. Based on structural characterization and 3D simulations, it is found that the polarization gradient induced by the gate metallization forms a P-type pseudo-doping region under the gate between the tensile surface and the compressively strained bulk AlGaN barrier layer. The strain induced by the gate metallization can compensate for the piezoelectric component. As a result, the gate contact can operate at temperatures as high as 700 °C and can withstand a large reverse bias of up to −100 V, which is interesting for high-performance transistors dedicated to power applications.

  7. Management of the baseline shift using a new and simple method for respiratory-gated radiation therapy: Detectability and effectiveness of a flexible monitoring system

    SciTech Connect (OSTI)

    Tachibana, Hidenobu; Kitamura, Nozomi; Ito, Yasushi; Kawai, Daisuke; Nakajima, Masaru; Tsuda, Akihisa; Shiizuka, Hisao

    2011-07-15

    Purpose: In respiratory-gated radiation therapy, a baseline shift decreases the accuracy of target coverage and organs at risk (OAR) sparing. The effectiveness of audio-feedback and audio-visual feedback in correcting the baseline shift in the breathing pattern of the patient has been demonstrated previously. However, the baseline shift derived from the intrafraction motion of the patient's body cannot be corrected by these methods. In the present study, the authors designed and developed a simple and flexible system. Methods: The system consisted of a web camera and a computer running our in-house software. The in-house software was adapted to template matching and also to no preimage processing. The system was capable of monitoring the baseline shift in the intrafraction motion of the patient's body. Another marker box was used to monitor the baseline shift due to the flexible setups required of a marker box for gated signals. The system accuracy was evaluated by employing a respiratory motion phantom and was found to be within AAPM Task Group 142 tolerance (positional accuracy <2 mm and temporal accuracy <100 ms) for respiratory-gated radiation therapy. Additionally, the effectiveness of this flexible and independent system in gated treatment was investigated in healthy volunteers, in terms of the results from the differences in the baseline shift detectable between the marker positions, which the authors evaluated statistically. Results: The movement of the marker on the sternum [1.599 {+-} 0.622 mm (1 SD)] was substantially decreased as compared with the abdomen [6.547 {+-} 0.962 mm (1 SD)]. Additionally, in all of the volunteers, the baseline shifts for the sternum [-0.136 {+-} 0.868 (2 SD)] were in better agreement with the nominal baseline shifts than was the case for the abdomen [-0.722 {+-} 1.56 mm (2 SD)]. The baseline shifts could be accurately measured and detected using the monitoring system, which could acquire the movement of the marker on the

  8. Polarization of Bi{sub 2}Te{sub 3} thin film in a floating-gate capacitor structure

    SciTech Connect (OSTI)

    Yuan, Hui E-mail: qli6@gmu.edu; Li, Haitao; Zhu, Hao; Zhang, Kai; Baumgart, Helmut; Bonevich, John E.; Richter, Curt A.; Li, Qiliang E-mail: qli6@gmu.edu

    2014-12-08

    Metal-Oxide-Semiconductor (MOS) capacitors with Bi{sub 2}Te{sub 3} thin film sandwiched and embedded inside the oxide layer have been fabricated and studied. The capacitors exhibit ferroelectric-like hysteresis which is a result of the robust, reversible polarization of the Bi{sub 2}Te{sub 3} thin film while the gate voltage sweeps. The temperature-dependent capacitance measurement indicates that the activation energy is about 0.33?eV for separating the electron and hole pairs in the bulk of Bi{sub 2}Te{sub 3}, and driving them to either the top or bottom surface of the thin film. Because of the fast polarization speed, potentially excellent endurance, and the complementary metaloxidesemiconductor compatibility, the Bi{sub 2}Te{sub 3} embedded MOS structures are very interesting for memory application.

  9. DNA and RNA sequencing by nanoscale reading through programmable electrophoresis and nanoelectrode-gated tunneling and dielectric detection

    DOE Patents [OSTI]

    Lee, James W.; Thundat, Thomas G.

    2005-06-14

    An apparatus and method for performing nucleic acid (DNA and/or RNA) sequencing on a single molecule. The genetic sequence information is obtained by probing through a DNA or RNA molecule base by base at nanometer scale as though looking through a strip of movie film. This DNA sequencing nanotechnology has the theoretical capability of performing DNA sequencing at a maximal rate of about 1,000,000 bases per second. This enhanced performance is made possible by a series of innovations including: novel applications of a fine-tuned nanometer gap for passage of a single DNA or RNA molecule; thin layer microfluidics for sample loading and delivery; and programmable electric fields for precise control of DNA or RNA movement. Detection methods include nanoelectrode-gated tunneling current measurements, dielectric molecular characterization, and atomic force microscopy/electrostatic force microscopy (AFM/EFM) probing for nanoscale reading of the nucleic acid sequences.

  10. Recovery from ultraviolet-induced threshold voltage shift in indium gallium zinc oxide thin film transistors by positive gate bias

    SciTech Connect (OSTI)

    Liu, P.; Chen, T. P.; Li, X. D.; Wong, J. I.; Liu, Z.; Liu, Y.; Leong, K. C.

    2013-11-11

    The effect of short-duration ultraviolet (UV) exposure on the threshold voltage (V{sub th}) of amorphous indium gallium zinc oxide thin film transistors (TFTs) and its recovery characteristics were investigated. The V{sub th} exhibited a significant negative shift after UV exposure. The V{sub th} instability caused by UV illumination is attributed to the positive charge trapping in the dielectric layer and/or at the channel/dielectric interface. The illuminated devices showed a slow recovery in threshold voltage without external bias. However, an instant recovery can be achieved by the application of positive gate pulses, which is due to the elimination of the positive trapped charges as a result of the presence of a large amount of field-induced electrons in the interface region.

  11. Evaluation of the Leon3 soft-core processor within a Xilinx radiation-hardened field-programmable gate array.

    SciTech Connect (OSTI)

    Learn, Mark Walter

    2012-01-01

    The purpose of this document is to summarize the work done to evaluate the performance of the Leon3 soft-core processor in a radiation environment while instantiated in a radiation-hardened static random-access memory based field-programmable gate array. This evaluation will look at the differences between two soft-core processors: the open-source Leon3 core and the fault-tolerant Leon3 core. Radiation testing of these two cores was conducted at the Texas A&M University Cyclotron facility and Lawrence Berkeley National Laboratory. The results of these tests are included within the report along with designs intended to improve the mitigation of the open-source Leon3. The test setup used for evaluating both versions of the Leon3 is also included within this document.

  12. Separation and counting of single molecules through nanofluidics, programmable electrophoresis, and nanoelectrode-gated tunneling and dielectric detection

    DOE Patents [OSTI]

    Lee, James W.; Thundat, Thomas G.

    2006-04-25

    An apparatus for carrying out the separation, detection, and/or counting of single molecules at nanometer scale. Molecular separation is achieved by driving single molecules through a microfluidic or nanofluidic medium using programmable and coordinated electric fields. In various embodiments, the fluidic medium is a strip of hydrophilic material on nonconductive hydrophobic surface, a trough produced by parallel strips of hydrophobic nonconductive material on a hydrophilic base, or a covered passageway produced by parallel strips of hydrophobic nonconductive material on a hydrophilic base together with a nonconductive cover on the parallel strips of hydrophobic nonconductive material. The molecules are detected and counted using nanoelectrode-gated electron tunneling methods, dielectric monitoring, and other methods.

  13. Characterization of SiO{sub 2}/SiN{sub x} gate insulators for graphene based nanoelectromechanical systems

    SciTech Connect (OSTI)

    Tvri, E.; Csontos, M., E-mail: csontos@dept.phy.bme.hu; Krivchy, T.; Csonka, S. [Department of Physics, Budapest University of Technology and Economics and Condensed Matter Research Group of the Hungarian Academy of Sciences, Budafoki t 8, H-1111 Budapest (Hungary); Frjes, P. [MEMS Lab, Institute for Technical Physics and Materials Science, RCNS, HAS, Konkoly-Thege t 29-33, H-1121 Budapest (Hungary)

    2014-09-22

    The structural and magnetotransport characterization of graphene nanodevices exfoliated onto Si/SiO{sub 2}/SiN{sub x} heterostructures are presented. Improved visibility of the deposited flakes is achieved by optimal tuning of the dielectric film thicknesses. The conductance of single layer graphene Hall-bar nanostructures utilizing SiO{sub 2}/SiN{sub x} gate dielectrics were characterized in the quantum Hall regime. Our results highlight that, while exhibiting better mechanical and chemical stability, the effect of non-stoichiometric SiN{sub x} on the charge carrier mobility of graphene is comparable to that of SiO{sub 2}, demonstrating the merits of SiN{sub x} as an ideal material platform for graphene based nanoelectromechanical applications.

  14. Low-temperature formation of high-quality gate oxide by ultraviolet irradiation on spin-on-glass

    SciTech Connect (OSTI)

    Usuda, R.; Uchida, K.; Nozaki, S.

    2015-11-02

    Although a UV cure was found to effectively convert a perhydropolysilazane (PHPS) spin-on-glass film into a dense SiO{sub x} film at low temperature, the electrical characteristics were never reported in order to recommend the use of PHPS as a gate-oxide material that can be formed at low temperature. We have formed a high-quality gate oxide by UV irradiation on the PHPS film, and obtained an interface midgap trap density of 3.4 × 10{sup 11 }cm{sup −2} eV{sup −1} by the UV wet oxidation and UV post-metallization annealing (PMA), at a temperature as low as 160 °C. In contrast to the UV irradiation using short-wavelength UV light, which is well known to enhance oxidation by the production of the excited states of oxygen, the UV irradiation was carried out using longer-wavelength UV light from a metal halide lamp. The UV irradiation during the wet oxidation of the PHPS film generates electron-hole pairs. The electrons ionize the H{sub 2}O molecules and facilitate dissociation of the molecules into H and OH{sup −}. The OH{sup −} ions are highly reactive with Si and improve the stoichiometry of the oxide. The UV irradiation during the PMA excites the electrons from the accumulation layer, and the built-in electric field makes the electron injection into the oxide much easier. The electrons injected into the oxide recombine with the trapped holes, which have caused a large negative flat band voltage shift after the UV wet oxidation, and also ionize the H{sub 2}O molecules. The ionization results in the electron stimulated dissociation of H{sub 2}O molecules and the decreased interface trap density.

  15. ALD TiO2-Al2O3 Stack: An Improved Gate Dielectrics on Ga-polar GaN MOSCAPs

    DOE PAGES-Beta [OSTI]

    Wei, Daming; Edgar, James H.; Briggs, Dayrl P.; Srijanto, Bernadeta R.; Retterer, Scott T.; Meyer, III, Harry M.

    2014-10-15

    This research focuses on the benefits and properties of TiO2-Al2O3 nano-stack thin films deposited on Ga2O3/GaN by plasma-assisted atomic layer deposition (PA-ALD) for gate dielectric development. This combination of materials achieved a high dielectric constant, a low leakage current, and a low interface trap density. Correlations were sought between the films’ structure, composition, and electrical properties. The gate dielectrics were approximately 15 nm thick and contained 5.1 nm TiO2, 7.1 nm Al2O3 and 2 nm Ga2O3 as determined by spectroscopic ellipsometry. The interface carbon concentration, as measured by x-ray photoelectron spectroscopy (XPS) depth profile, was negligible for GaN pretreated bymore » thermal oxidation in O2 for 30 minutes at 850°C. The RMS roughness slightly increased after thermal oxidation and remained the same after ALD of the nano-stack, as determined by atomic force microscopy. The dielectric constant of TiO2-Al2O3 on Ga2O3/GaN was increased to 12.5 compared to that of pure Al2O3 (8~9) on GaN. In addition, the nano-stack's capacitance-voltage (C-V) hysteresis was small, with a total trap density of 8.74 × 1011 cm-2. The gate leakage current density (J=2.81× 10-8 A/cm2) was low at +1 V gate bias. These results demonstrate the promising potential of plasma ALD deposited TiO2/Al2O3 for serving as the gate oxide on Ga2O3/GaN based MOS devices.« less

  16. SU-E-T-582: On-Line Dosimetric Verification of Respiratory Gated Volumetric Modulated Arc Therapy Using the Electronic Portal Imaging Device

    SciTech Connect (OSTI)

    Schaly, B; Gaede, S; Xhaferllari, I

    2015-06-15

    Purpose: To investigate the clinical utility of on-line verification of respiratory gated VMAT dosimetry during treatment. Methods: Portal dose images were acquired during treatment in integrated mode on a Varian TrueBeam (v. 1.6) linear accelerator for gated lung and liver patients that used flattening filtered beams. The source to imager distance (SID) was set to 160 cm to ensure imager clearance in case the isocenter was off midline. Note that acquisition of integrated images resulted in no extra dose to the patient. Fraction 1 was taken as baseline and all portal dose images were compared to that of the baseline, where the gamma comparison and dose difference were used to measure day-to-day exit dose variation. All images were analyzed in the Portal Dosimetry module of Aria (v. 10). The portal imager on the TrueBeam was calibrated by following the instructions for dosimetry calibration in service mode, where we define 1 calibrated unit (CU) equal to 1 Gy for 10×10 cm field size at 100 cm SID. This reference condition was measured frequently to verify imager calibration. Results: The gamma value (3%, 3 mm, 5% threshold) ranged between 92% and 100% for the lung and liver cases studied. The exit dose can vary by as much as 10% of the maximum dose for an individual fraction. The integrated images combined with the information given by the corresponding on-line soft tissue matched cone-beam computed tomography (CBCT) images were useful in explaining dose variation. For gated lung treatment, dose variation was mainly due to the diaphragm position. For gated liver treatment, the dose variation was due to both diaphragm position and weight loss. Conclusion: Integrated images can be useful in verifying dose delivery consistency during respiratory gated VMAT, although the CBCT information is needed to explain dose differences due to anatomical changes.

  17. SU-E-J-145: Validation of An Analytical Model for in Vivo Range Verification Using GATE Monte Carlo Simulation in Proton Therapy

    SciTech Connect (OSTI)

    Lee, C; Lin, H; Chao, T; Hsiao, I; Chuang, K

    2015-06-15

    Purpose: Predicted PET images on the basis of analytical filtering approach for proton range verification has been successful developed and validated using FLUKA Monte Carlo (MC) codes and phantom measurements. The purpose of the study is to validate the effectiveness of analytical filtering model for proton range verification on GATE/GEANT4 Monte Carlo simulation codes. Methods: In this study, we performed two experiments for validation of predicted β+-isotope by the analytical model with GATE/GEANT4 simulations. The first experiments to evaluate the accuracy of predicting β+-yields as a function of irradiated proton energies. In second experiment, we simulate homogeneous phantoms of different materials irradiated by a mono-energetic pencil-like proton beam. The results of filtered β+-yields distributions by the analytical model is compared with those of MC simulated β+-yields in proximal and distal fall-off ranges. Results: The results investigate the distribution between filtered β+-yields and MC simulated β+-yields distribution in different conditions. First, we found that the analytical filtering can be applied over the whole range of the therapeutic energies. Second, the range difference between filtered β+-yields and MC simulated β+-yields at the distal fall-off region are within 1.5mm for all materials used. The findings validated the usefulness of analytical filtering model on range verification of proton therapy on GATE Monte Carlo simulations. In addition, there is a larger discrepancy between filtered prediction and MC simulated β+-yields using GATE code, especially in proximal region. This discrepancy might Result from the absence of wellestablished theoretical models for predicting the nuclear interactions. Conclusion: Despite the fact that large discrepancies of the distributions between MC-simulated and predicted β+-yields were observed, the study prove the effectiveness of analytical filtering model for proton range verification using

  18. SU-E-T-66: Characterization of Radiation Dose Associated with Dark Currents During Beam Hold for Respiratory-Gated Electron Therapy

    SciTech Connect (OSTI)

    Hessler, J; Gupta, N; Rong, Y; Weldon, M

    2014-06-01

    Purpose: The main objective of this study was to estimate the radiation dose contributed by dark currents associated with the respiratory-gated electron therapy during beam hold. The secondary aim was to determine clinical benefits of using respiratory-gated electron therapy for left-sided breast cancer patients with positive internal mammary nodes (IMN). Methods: Measurements of the dark current-induced dose in all electron modes were performed on multiple Siemens and Varian linear accelerators by manually simulating beam-hold during respiratory gating. Dose was quantified at the machine isocenter by comparing the collected charge to the known output for all energies ranging from 6 to 18 MeV for a 10cm × 10cm field at 100 SSD with appropriate solid-water buildup. Using the Eclipse treatment planning system, we compared the additional dose associated with dark current using gated electron fields to the dose uncertainties associated with matching gated photon fields and ungated electron fields. Dose uncertainties were seen as hot and cold spots along the match line of the fields. Results: The magnitude of the dose associated with dark current is highly correlated to the energy of the beam and the amount of time the beam is on hold. For lower energies (6–12 MeV), there was minimal dark current dose (0.1–1.3 cGy/min). Higher energies (15–18 MeV) showed measurable amount of doses. The dark current associated with the electron beam-hold varied between linear accelerator vendors and depended on dark current suppression and the age of the linear accelerator. Conclusion: For energies up to 12 MeV, the dose associated with the dark current for respiratorygated electron therapy was shown to be negligible, and therefore should be considered an option for treating IMN positive left-sided breast cancer patients. However, at higher energies the benefit of respiratory gating may be outweighed by dose due to the dark current.

  19. Fermi level pinning in metal/Al{sub 2}O{sub 3}/InGaAs gate stack after post metallization annealing

    SciTech Connect (OSTI)

    Winter, R.; Krylov, I.; Cytermann, C.; Eizenberg, M.; Tang, K.; Ahn, J.; McIntyre, P. C.

    2015-08-07

    The effect of post metal deposition annealing on the effective work function in metal/Al{sub 2}O{sub 3}/InGaAs gate stacks was investigated. The effective work functions of different metal gates (Al, Au, and Pt) were measured. Flat band voltage shifts for these and other metals studied suggest that their Fermi levels become pinned after the post-metallization vacuum annealing. Moreover, there is a difference between the measured effective work functions of Al and Pt, and the reported vacuum work function of these metals after annealing. We propose that this phenomenon is caused by charging of indium and gallium induced traps at the annealed metal/Al{sub 2}O{sub 3} interface.

  20. Bottom-gate coplanar graphene transistors with enhanced graphene adhesion on atomic layer deposition Al{sub 2}O{sub 3}

    SciTech Connect (OSTI)

    Park, Dong-Wook; Mikael, Solomon; Chang, Tzu-Hsuan; Ma, Zhenqiang; Gong, Shaoqin

    2015-03-09

    A graphene transistor with a bottom-gate coplanar structure and an atomic layer deposition (ALD) aluminum oxide (Al{sub 2}O{sub 3}) gate dielectric is demonstrated. Wetting properties of ALD Al{sub 2}O{sub 3} under different deposition conditions are investigated by measuring the surface contact angle. It is observed that the relatively hydrophobic surface is suitable for adhesion between graphene and ALD Al{sub 2}O{sub 3}. To achieve hydrophobic surface of ALD Al{sub 2}O{sub 3}, a methyl group (CH{sub 3})-terminated deposition method has been developed and compared with a hydroxyl group (OH)-terminated deposition. Based on this approach, bottom-gate coplanar graphene field-effect transistors are fabricated and characterized. A post-thermal annealing process improves the performance of the transistors by enhancing the contacts between the source/drain metal and graphene. The fabricated transistor shows an I{sub on}/I{sub off} ratio, maximum transconductance, and field-effect mobility of 4.04, 20.1??S at V{sub D}?=?0.1?V, and 249.5?cm{sup 2}/Vs, respectively.

  1. Spin-polarization and spin-dependent logic gates in a double quantum ring based on Rashba spin-orbit effect: Non-equilibrium Green's function approach

    SciTech Connect (OSTI)

    Eslami, Leila, E-mail: Leslami@iust.ac.ir; Esmaeilzadeh, Mahdi, E-mail: mahdi@iust.ac.ir [Department of Physics, Iran University of Science and Technology, Tehran 16846 (Iran, Islamic Republic of)

    2014-02-28

    Spin-dependent electron transport in an open double quantum ring, when each ring is made up of four quantum dots and threaded by a magnetic flux, is studied. Two independent and tunable gate voltages are applied to induce Rashba spin-orbit effect in the quantum rings. Using non-equilibrium Green's function formalism, we study the effects of electron-electron interaction on spin-dependent electron transport and show that although the electron-electron interaction induces an energy gap, it has no considerable effect when the bias voltage is sufficiently high. We also show that the double quantum ring can operate as a spin-filter for both spin up and spin down electrons. The spin-polarization of transmitted electrons can be tuned from ?1 (pure spin-down current) to +1 (pure spin-up current) by changing the magnetic flux and/or the gates voltage. Also, the double quantum ring can act as AND and NOR gates when the system parameters such as Rashba coefficient are properly adjusted.

  2. High mobility field effect transistor based on BaSnO{sub 3} with Al{sub 2}O{sub 3} gate oxide

    SciTech Connect (OSTI)

    Park, Chulkwon; Kim, Useong; Ju, Chan Jong; Park, Ji Sung; Kim, Young Mo; Char, Kookrin

    2014-11-17

    We fabricated an n-type accumulation-mode field effect transistor based on BaSnO{sub 3} transparent perovskite semiconductor, taking advantage of its high mobility and oxygen stability. We used the conventional metal-insulator-semiconductor structures: (In,Sn){sub 2}O{sub 3} as the source, drain, and gate electrodes, Al{sub 2}O{sub 3} as the gate insulator, and La-doped BaSnO{sub 3} as the semiconducting channel. The Al{sub 2}O{sub 3} gate oxide was deposited by atomic layer deposition technique. At room temperature, we achieved the field effect mobility value of 17.8?cm{sup 2}/Vs and the I{sub on}/I{sub off} ratio value higher than 10{sup 5} for V{sub DS}?=?1?V. These values are higher than those previously reported on other perovskite oxides, in spite of the large density of threading dislocations in the BaSnO{sub 3} on SrTiO{sub 3} substrates. However, a relatively large subthreshold swing value was found, which we attribute to the large density of charge traps in the Al{sub 2}O{sub 3} as well as the threading dislocations.

  3. The Conformation of Bound GMPPNP Suggests a Mechanism for Gating the Active Site of the SRP GTPase

    SciTech Connect (OSTI)

    Padmanabhan, S.; Freymann, D.

    2010-03-08

    The signal recognition particle (SRP) is a phylogenetically conserved ribonucleoprotein that mediates cotranslational targeting of secreted and membrane proteins to the membrane. Targeting is regulated by GTP binding and hydrolysis events that require direct interaction between structurally homologous 'NG' GTPase domains of the SRP signal recognition subunit and its membrane-associated receptor, SR{alpha}. Structures of both the apo and GDP bound NG domains of the prokaryotic SRP54 homolog, Ffh, and the prokaryotic receptor homolog, FtsY, have been determined. The structural basis for the GTP-dependent interaction between the two proteins, however, remains unknown. We report here two structures of the NG GTPase of Ffh from Thermus aquaticus bound to the nonhydrolyzable GTP analog GMPPNP. Both structures reveal an unexpected binding mode in which the {beta}-phosphate is kinked away from the binding site and magnesium is not bound. Binding of the GTP analog in the canonical conformation found in other GTPase structures is precluded by constriction of the phosphate binding P loop. The structural difference between the Ffh complex and other GTPases suggests a specific conformational change that must accompany movement of the nucleotide from an inactive to an active binding mode. Conserved side chains of the GTPase sequence motifs unique to the SRP subfamily may function to gate formation of the active GTP bound conformation. Exposed hydrophobic residues provide an interaction surface that may allow regulation of the GTP binding conformation, and thus activation of the GTPase, during the association of SRP with its receptor.

  4. Feasibility of gate-turnoff thyristors in a high-voltage direct-current transmission system: Final report

    SciTech Connect (OSTI)

    McMurray, W.

    1987-08-01

    This study to identify potentially attractive applications for gate-turnoff thyristor (GTO) converters in utility systems includes both high-voltage direct-current (HVDC) valves and static volt-ampere reactive (VAR) controllers. The work includes a broad review of basic principles and the power circuit arrangements that are judged to be most attractive. The major differences between ordinary thyristors and GTO converters are discussed, including alternative HVDC transmission systems and static VAR controllers that are possible with GTOs. Whereas a current-source type of converter is the obvious choice with ordinary thyristors, the use of GTOs allows either current-source or voltage-source converters to be considered. A computer-aided analysis of the basic 6-pulse GTO current-source converter system is presented, including general equations for steady-state operation and plotting calculated waveforms. An analysis of a GTO voltage-source converter is given in less detail. Due to incomplete performance data, unresolved critical problems such as protection, and the disadvantages of higher cost, complexity and losses, it is difficult to recommend a specific GTO converter system at this time. The major advantage that GTO converters can offer is rapid and smoothly continuous control of reactive power. Further development of GTO converters should be aimed towards an application where reactive power control is very important and not readily achievable by conventional methods. 12 refs., 47 figs.

  5. Short range micro-power impulse radar with high resolution swept range gate with damped transmit and receive cavities

    DOE Patents [OSTI]

    McEwan, T.E.

    1998-06-30

    A radar range finder and hidden object locator is based on ultra-wide band radar with a high resolution swept range gate. The device generates an equivalent time amplitude scan with atypical range of 4 inches to 20 feet, and an analog range resolution as limited by a jitter of on the order of 0.01 inches. A differential sampling receiver is employed to effectively eliminate ringing and other aberrations induced in the receiver by the near proximity of the transmit antenna, so a background subtraction is not needed, simplifying the circuitry while improving performance. Uses of the invention include a replacement of ultrasound devices for fluid level sensing, automotive radar, such as cruise control and parking assistance, hidden object location, such as stud and rebar finding. Also, this technology can be used when positioned over a highway lane to collect vehicle count and speed data for traffic control. Techniques are used to reduce clutter in the receive signal, such as decoupling the receive and transmit cavities by placing a space between them, using conductive or radiative damping elements on the cavities, and using terminating plates on the sides of the openings. 20 figs.

  6. Short range micro-power impulse radar with high resolution swept range gate with damped transmit and receive cavities

    DOE Patents [OSTI]

    McEwan, Thomas E.

    1998-01-01

    A radar range finder and hidden object locator is based on ultra-wide band radar with a high resolution swept range gate. The device generates an equivalent time amplitude scan with atypical range of 4 inches to 20 feet, and an analog range resolution as limited by a jitter of on the order of 0.01 inches. A differential sampling receiver is employed to effectively eliminate ringing and other aberrations induced in the receiver by the near proximity of the transmit antenna, so a background subtraction is not needed, simplifying the circuitry while improving performance. Uses of the invention include a replacement of ultrasound devices for fluid level sensing, automotive radar, such as cruise control and parking assistance, hidden object location, such as stud and rebar finding. Also, this technology can be used when positioned over a highway lane to collect vehicle count and speed data for traffic control. Techniques are used to reduce clutter in the receive signal, such as decoupling the receive and transmit cavities by placing a space between them, using conductive or radiative damping elements on the cavities, and using terminating plates on the sides of the openings.

  7. Comprehensive study and design of scaled metal/high-k/Ge gate stacks with ultrathin aluminum oxide interlayers

    SciTech Connect (OSTI)

    Asahara, Ryohei; Hideshima, Iori; Oka, Hiroshi; Minoura, Yuya; Hosoi, Takuji Shimura, Takayoshi; Watanabe, Heiji; Ogawa, Shingo; Yoshigoe, Akitaka; Teraoka, Yuden

    2015-06-08

    Advanced metal/high-k/Ge gate stacks with a sub-nm equivalent oxide thickness (EOT) and improved interface properties were demonstrated by controlling interface reactions using ultrathin aluminum oxide (AlO{sub x}) interlayers. A step-by-step in situ procedure by deposition of AlO{sub x} and hafnium oxide (HfO{sub x}) layers on Ge and subsequent plasma oxidation was conducted to fabricate Pt/HfO{sub 2}/AlO{sub x}/GeO{sub x}/Ge stacked structures. Comprehensive study by means of physical and electrical characterizations revealed distinct impacts of AlO{sub x} interlayers, plasma oxidation, and metal electrodes serving as capping layers on EOT scaling, improved interface quality, and thermal stability of the stacks. Aggressive EOT scaling down to 0.56 nm and very low interface state density of 2.4 × 10{sup 11 }cm{sup −2}eV{sup −1} with a sub-nm EOT and sufficient thermal stability were achieved by systematic process optimization.

  8. SU-E-T-361: Clinical Benefit of Automatic Beam Gating Mixed with Breath Hold in Radiation Therapy of Left Breast

    SciTech Connect (OSTI)

    Wu, J; Hill, G; Spiegel, J; Ye, J; Mehta, V

    2014-06-01

    Purpose: To investigate the clinical and dosimetric benefits of automatic gating of left breast mixed with breath-hold technique. Methods: Two Active Breathing Control systems, ABC2.0 and ABC3.0, were used during simulation and treatment delivery. The two systems are different such that ABC2.0 is a breath-hold system without beam control capability, while ABC3.0 has capability in both breath-hold and beam gating. At simulation, each patient was scanned twice: one with free breathing (FB) and one with breath hold through ABC. Treatment plan was generated on the CT with ABC. The same plan was also recalculated on the CT with FB. These two plans were compared to assess plan quality. For treatments with ABC2.0, beams with MU > 55 were manually split into multiple subfields. All subfields were identical and shared the total MU. For treatment with ABC3.0, beam splitting was unnecessary. Instead, treatment was delivered in gating mode mixed with breath-hold technique. Treatment delivery efficiency using the two systems was compared. Results: The prescribed dose was 50.4Gy at 1.8Gy/fraction. The maximum heart dose averaged over 10 patients was 46.02.5Gy and 24.512.2Gy for treatments with FB and with ABC respectively. The corresponding heart V10 was 13.23.6% and 1.01.6% respectively. The averaged MUs were 99.87.5 for LMT, 99.29.4 for LLT. For treatment with ABC2.0, normally the original beam was split into 2 subfields. The averaged total time to delivery all beams was 4.30.4min for treatments with ABC2.0 and 3.30.6min for treatments with ABC3.0 in gating mode. Conclusion: Treatment with ABC tremendously reduced heart dose. Compared to treatments with ABC2.0, gating with ABC3.0 reduced the total treatment time by 23%. Use of ABC3.0 improved the delivery efficiency, and eliminated the possibility of mistreatments. The latter may happen with ABC2.0 where beam is not terminated when breath signal falls outside of the treatment window.

  9. SU-E-J-211: Design and Study of In-House Software Based Respiratory Motion Monitoring, Controlling and Breath-Hold Device for Gated Radiotherapy

    SciTech Connect (OSTI)

    Shanmugam, Senthilkumar

    2014-06-01

    Purpose: The purpose of this present work was to fabricate an in-house software based respiratory monitoring, controlling and breath-hold device using computer software programme which guides the patient to have uniform breath hold in response to request during the gated radiotherapy. Methods: The respiratory controlling device consists of a computer, inhouse software, video goggles, a highly sensitive sensor for measurement of distance, mounting systems, a camera, a respiratory signal device, a speaker and a visual indicator. The computer is used to display the respiratory movements of the patient with digital as well as analogue respiration indicators during the respiration cycle, to control, breath-hold and analyze the respiratory movement using indigenously developed software. Results: Studies were conducted with anthropomophic phantoms by simulating the respiratory motion on phantoms and recording the respective movements using the respiratory monitoring device. The results show good agreement between the simulated and measured movements. Further studies were conducted for 60 cancer patients with several types of cancers in the thoracic region. The respiratory movement cycles for each fraction of radiotherapy treatment were recorded and compared. Alarm indications are provided in the system to indicate when the patient breathing movement exceeds the threshold level. This will help the patient to maintain uniform breath hold during the radiotherapy treatment. Our preliminary clinical test results indicate that our device is highly reliable and able to maintain the uniform respiratory motion and breathe hold during the entire course of gated radiotherapy treatment. Conclusion: An indigenous respiratory monitoring device to guide the patient to have uniform breath hold device was fabricated. The alarm feature and the visual waveform indicator in the system guide the patient to have normal respiration. The signal from the device can be connected to the radiation

  10. SU-D-BRE-02: Development and Commissioning of A Gated Spot Scanning Proton Beam Therapy System with Real-Time Tumor-Tracking

    SciTech Connect (OSTI)

    Umegaki, K; Matsuura, T.; Takao, S.; Nihongi, H.; Yamada, T.; Miyamoto, N.; Shimizu, S.; Shirato, H.; Matsuda, K.; Nakamura, F.; Umezawa, M.; Hiramoto, K.

    2014-06-01

    Purpose: A novel Proton Beam Therapy system has been developed by integrating Real-Time Tumor-Tracking (RTRT) and discrete spot scanning techniques. The system dedicated for spot scanning delivers significant advantages for both clinical and economical points of view. The system has the ability to control dose distribution with spot scanning beams and to gate the beams from the synchrotron to irradiate moving tumors only when the actual positions of them are within the planned position. Methods: The newly designed system consists of a synchrotron, beam transport systems, a compact and rotating gantry system with robotic couch and two orthogonal sets of X-ray fluoroscopes. The fully compact design of the system has been realized by reducing the maximum energy of the beam to 220MeV, corresponding to 30g/cm2 range and the number of circulating protons per synchrotron operation cycle, due to higher beam utilization efficiency in spot scanning. To improve the irradiation efficiency in the integration of RTRT and spot scanning, a new control system has been developed to enable multiple gated irradiation per operation cycle according to the gating signals. After the completion of the equipment installation, beam tests and commissioning has been successfully performed. Results: The basic performances and beam characteristics through the synchrotron accelerator to iso-center have been confirmed and the performance test of the irradiation nozzle and whole system has been appropriately completed. CBCT image has been checked and sufficient quality was obtained. RTRT system has been demonstrated and realized accurate dose distributions for moving targets. Conclusion: The gated spot scanning Proton Beam Therapy system with Real-Time Tumor-Tracking has been developed, successfully installed and tested. The new system enables us to deliver higher dose to the moving target tumors while sparing surrounding normal tissues and to realize the compact design of the system and facility

  11. Femtosecond all-optical parallel logic gates based on tunable saturable to reverse saturable absorption in graphene-oxide thin films

    SciTech Connect (OSTI)

    Roy, Sukhdev Yadav, Chandresh

    2013-12-09

    A detailed theoretical analysis of ultrafast transition from saturable absorption (SA) to reverse saturable absorption (RSA) has been presented in graphene-oxide thin films with femtosecond laser pulses at 800 nm. Increase in pulse intensity leads to switching from SA to RSA with increased contrast due to two-photon absorption induced excited-state absorption. Theoretical results are in good agreement with reported experimental results. Interestingly, it is also shown that increase in concentration results in RSA to SA transition. The switching has been optimized to design parallel all-optical femtosecond NOT, AND, OR, XOR, and the universal NAND and NOR logic gates.

  12. A two-fold reduction in measurement time for neutron assay: Initial tests of a prototype dual-gated shift register

    SciTech Connect (OSTI)

    Stewart, J.E.; Bourret, S.C.; Krick, M.S.; Hansen, W.J.; Harker, W.C.

    1996-09-01

    Neutron coincidence counting (NCC) is used routinely around the world for nondestructive mass assay of uranium and plutonium in many forms, including waste. Compared with other methods, NCC is generally the most flexible, economic, and rapid. Many applications of NCC would benefit from a reduction in counting time required for a fixed random error. We have developed and tested the first prototype of a dual- gated, shift-register-based electronics unit that offers the potential of decreased measurement time for all passive and active NCC applications.

  13. Development and Deployment of the Extended Reach Sluicing System (ERSS) for Retrieval of Hanford Single Shell Tank Waste. Draft

    SciTech Connect (OSTI)

    Bauer, Roger E.; Figley, Reed R.; Innes, A. G.

    2013-11-11

    A history of the evolution and the design development of Extended Reach Sluicer System (ERSS) is presented. Several challenges are described that had to be overcome to create a machine that went beyond the capabilities of prior generation sluicers to mobilize waste in Single Shell Tanks for pumping into Double Shell Tank receiver tanks. Off-the-shelf technology and traditional hydraulic fluid power systems were combined with the custom-engineered components to create the additional functionality of the ERSS, while still enabling it to fit within very tight entry envelope into the SST. Problems and challenges inevitably were encountered and overcome in ways that enhance the state of the art of fluid power applications in such constrained environments. Future enhancements to the ERSS design are explored for retrieval of tanks with different dimensions and internal obstacles.

  14. "The gate-keepers in a changing world: integrating microbial diversity and dynamics with global change biology."

    SciTech Connect (OSTI)

    Jessica L.M. Gutknecht and Kathryn M. Docherty

    2011-11-01

    Microorganisms (Bacteria, Archaea and Fungi) are the gate-keepers of many ecosystem-scale biogeochemical cycles. Although there have been measurable changes in ecosystem function due to human activities such as greenhouse gas production, nutrient loading, land-use change, and water consumption, few studies have connected microbial community dynamics with these changes in ecosystem function. Specifically, very little is known about how global changes will induce important functional changes in microbial biodiversity. Even less is known about how microbial functional changes could alter rates of nutrient cycling or whether microbial communities have enough functional redundancy that changes will have little impact on overall process rates. The proposed symposium will provide an overview of this emerging research area, with emphasis on linking the microorganisms directly to important ecological functions under the influence of global change dynamics. The session will include both broad overviews as well as specific case-studies by researchers who examine microbial communities from a variety of taxonomic levels and from various environments. The session will begin broadly, with speakers discussing how microbial communities may inform ecosystem-scale global change studies, and help to make microbial ecological knowledge more tangible for a broad range of ecologists. The session will continue with case studies of microbial community information informing process in global change experiments. Finally, the session will close with speakers discussing how microbial community information might fit into global change models, and what types of information are useful for future studies. We have requested that speakers particularly incorporate their views on what types of microbial data is useful and informative in the context of larger ecosystem processes. We foresee that this session could serve as a focal point for global change microbial ecologists to meet and discuss their

  15. NEGATIVE GATE GENERATOR

    DOE Patents [OSTI]

    Jones, C.S.; Eaton, T.E.

    1958-02-01

    This patent relates to pulse generating circuits and more particularly to rectangular pulse generators. The pulse generator of the present invention incorporates thyratrons as switching elements to discharge a first capacitor through a load resistor to initiate and provide the body of a Pulse, and subsequently dlscharge a second capacitor to impress the potential of its charge, with opposite potential polarity across the load resistor to terminate the pulse. Accurate rectangular pulses in the millimicrosecond range are produced across a low impedance by this generator.

  16. Bid_Decision_Gate

    Energy Savers

    Fall 2013 Better Plants Progress Update Fall 2013 The Fall 2013 Progress Update chronicles the Better Buildings, Better Plants Program's efforts to capture these cost-effective, energy-saving opportunities and demonstrate that strong energy management practices are good for business, good for the economy, and good for the environment. Better Plants Progress Update Fall 2013 (1.11 MB) More Documents & Publications Better Plants Progress Update 2014 Better Plants Two-Page Overview Better

  17. David Gates home page

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Experiment 1987-1993 Research Assistant, Columbia University, High Beta Tokamak Group. Education 1993 Ph. D.- Columbia University, Dept. of Applied Physics, Graduate School of...

  18. The role of the substrate on the dispersion in accumulation in III-V compound semiconductor based metal-oxide-semiconductor gate stacks

    SciTech Connect (OSTI)

    Krylov, Igor; Ritter, Dan; Eizenberg, Moshe

    2015-09-07

    Dispersion in accumulation is a widely observed phenomenon in metal-oxide-semiconductor gate stacks based on III-V compound semiconductors. The physical origin of this phenomenon is attributed to border traps located in the dielectric material adjacent to the semiconductor. Here, we study the role of the semiconductor substrate on the electrical quality of the first layers at atomic layer deposited (ALD) dielectrics. For this purpose, either Al{sub 2}O{sub 3} or HfO{sub 2} dielectrics with variable thicknesses were deposited simultaneously on two technology important semiconductors—InGaAs and InP. Significantly larger dispersion was observed in InP based gate stacks compared to those based on InGaAs. The observed difference is attributed to a higher border trap density in dielectrics deposited on InP compared to those deposited on InGaAs. We therefore conclude that the substrate plays an important role in the determination of the electrical quality of the first dielectric monolayers deposited by ALD. An additional observation is that larger dispersion was obtained in HfO{sub 2} based capacitors compared to Al{sub 2}O{sub 3} based capacitors, deposited on the same semiconductor. This phenomenon is attributed to the lower conduction band offset rather than to a higher border trap density.

  19. Effect of tunnel injection through the Schottky gate on the static and noise behavior of GaInAs/AlInAs high electron mobility transistor

    SciTech Connect (OSTI)

    Moro-Melgar, Diego; Mateos, Javier Gonzlez, Toms Vasallo, Beatriz G.

    2014-12-21

    By using a Monte Carlo simulator, the influence of the tunnel injection through the Schottky contact at the gate electrode of a GaInAs/AlInAs High Electron Mobility Transistor (HEMT) has been studied in terms of the static and noise performance. The method used to characterize the quantum tunnel current has been the Wentzel-Kramers-Brillouin (WKB) approach. The possibility of taking into account the influence of the image charge effect in the potential barrier height has been included as well. Regarding the static behavior, tunnel injection leads to a decrease in the drain current I{sub D} due to an enhancement of the potential barrier controlling the carrier transport through the channel. However, the pinch-off is degraded due to the tunneling current. Regarding the noise behavior, since the fluctuations in the potential barrier height caused by the tunnel-injected electrons are strongly coupled with the drain current fluctuations, a significant increase in the drain-current noise takes place, even when the tunnel effect is hardly noticeable in the static I-V characteristics, fact that must be taken into account when designing scaled HEMT for low-noise applications. In addition, tunnel injection leads to the appearance of full shot noise in the gate current.

  20. Transfer-free graphene synthesis on sapphire by catalyst metal agglomeration technique and demonstration of top-gate field-effect transistors

    SciTech Connect (OSTI)

    Miyoshi, Makoto Arima, Yukinori; Kubo, Toshiharu; Egawa, Takashi; Mizuno, Masaya; Soga, Tetsuo

    2015-08-17

    Transfer-free graphene synthesis was performed on sapphire substrates by using the catalyst metal agglomeration technique, and the graphene film quality was compared to that synthesized on sputtered SiO{sub 2}/Si substrates. Raman scattering measurements indicated that the graphene film on sapphire has better structural qualities than that on sputtered SiO{sub 2}/Si substrates. The cross-sectional transmission microscopic study also revealed that the film flatness was drastically improved by using sapphire substrates instead of sputtered SiO{sub 2}/Si substrates. These quality improvements seemed to be due the chemical and thermal stabilities of sapphire. Top-gate field-effect transistors were fabricated using the graphene films on sapphire, and it was confirmed that their drain current can be modulated with applied gate voltages. The maximum field-effect mobilities were estimated to be 720 cm{sup 2}/V s for electrons and 880 cm{sup 2}/V s for holes, respectively.

  1. AVTA Federal Fleet PEV Readiness Data Logging and Characterization Study for the National Park Service: Golden Gate National Recreation Area

    SciTech Connect (OSTI)

    Stephen Schey; Jim Francfort

    2014-03-01

    Battelle Energy Alliance, LLC, managing and operating contractor for the U.S. Department of Energy's Idaho National Laboratory, is the lead laboratory for U.S. Department of Energy Advanced Vehicle Testing. Battelle Energy Alliance, LLC contracted with Intertek Testing Services, North America (ITSNA) to collect data on federal fleet operations as part of the Advanced Vehicle Testing Activity's Federal Fleet Vehicle Data Logging and Characterization study. The Advanced Vehicle Testing Activity study seeks to collect data to validate the utilization of advanced electric drive vehicle transportation. This report focuses on the Golden Gate National Recreation Area (GGNRA) fleet to identify daily operational characteristics of select vehicles and report findings on vehicle and mission characterizations to support the successful introduction of plug-in electric vehicles (PEVs) into the agencies' fleets. Individual observations of these selected vehicles provide the basis for recommendations related to electric vehicle adoption and whether a battery electric vehicle or plug-in hybrid electric vehicle (PHEV) (collectively PEVs) can fulfill the mission requirements. GGNRA identified 182 vehicles in its fleet, which are under the management of the U.S. General Services Administration. Fleet vehicle mission categories are defined in Section 4, and while the GGNRA vehicles conduct many different missions, only two (i.e., support and law enforcement missions) were selected by agency management to be part of this fleet evaluation. The selected vehicles included sedans, trucks, and sport-utility vehicles. This report will show that battery electric vehicles and/or PHEVs are capable of performing the required missions and providing an alternative vehicle for support vehicles and PHEVs provide the same for law enforcement, because each has a sufficient range for individual trips and time is available each day for charging to accommodate multiple trips per day. These charging events

  2. Effect of sidewall surface recombination on the quantum efficiency in a Y{sub 2}O{sub 3} passivated gated type-II InAs/GaSb long-infrared photodetector array

    SciTech Connect (OSTI)

    Chen, G.; Hoang, A. M.; Bogdanov, S.; Haddadi, A.; Darvish, S. R.; Razeghi, M.

    2013-11-25

    Y{sub 2}O{sub 3} was applied to passivate a long-wavelength infrared type-II superlattice gated photodetector array with 50% cut-off wavelength at 11 μm, resulting in a saturated gate bias that was 3 times lower than in a SiO{sub 2} passivated array. Besides effectively suppressing surface leakage, gating technique exhibited its ability to enhance the quantum efficiency of 100 × 100 μm size mesa from 51% to 57% by suppressing sidewall surface recombination. At 77 K, the gated photodetector showed dark current density and resistance-area product at −300 mV of 2.5 × 10{sup −5} A/cm{sup 2} and 1.3 × 10{sup 4} Ω cm{sup 2}, respectively, and a specific detectivity of 1.4 × 10{sup 12} Jones.

  3. Multi-scaled normal mode analysis method for dynamics simulation of protein-membrane complexes: A case study of potassium channel gating motion correlations

    SciTech Connect (OSTI)

    Wu, Xiaokun; Han, Min; Ming, Dengming

    2015-10-07

    Membrane proteins play critically important roles in many cellular activities such as ions and small molecule transportation, signal recognition, and transduction. In order to fulfill their functions, these proteins must be placed in different membrane environments and a variety of protein-lipid interactions may affect the behavior of these proteins. One of the key effects of protein-lipid interactions is their ability to change the dynamics status of membrane proteins, thus adjusting their functions. Here, we present a multi-scaled normal mode analysis (mNMA) method to study the dynamics perturbation to the membrane proteins imposed by lipid bi-layer membrane fluctuations. In mNMA, channel proteins are simulated at all-atom level while the membrane is described with a coarse-grained model. mNMA calculations clearly show that channel gating motion can tightly couple with a variety of membrane deformations, including bending and twisting. We then examined bi-channel systems where two channels were separated with different distances. From mNMA calculations, we observed both positive and negative gating correlations between two neighboring channels, and the correlation has a maximum as the channel center-to-center distance is close to 2.5 times of their diameter. This distance is larger than recently found maximum attraction distance between two proteins embedded in membrane which is 1.5 times of the protein size, indicating that membrane fluctuation might impose collective motions among proteins within a larger area. The hybrid resolution feature in mNMA provides atomic dynamics information for key components in the system without costing much computer resource. We expect it to be a conventional simulation tool for ordinary laboratories to study the dynamics of very complicated biological assemblies. The source code is available upon request to the authors.

  4. Upgrading the Center for Lightweighting Automotive Materials and Processing - a GATE Center of Excellence at the University of Michigan-Dearborn

    SciTech Connect (OSTI)

    Mallick, P. K.

    2012-08-30

    The Center for Lightweighting Materials and Processing (CLAMP) was established in September 1998 with a grant from the Department of Energy’s Graduate Automotive Technology Education (GATE) program. The center received the second round of GATE grant in 2005 under the title “Upgrading the Center for Lightweighting Automotive Materials and Processing”. Using the two grants, the Center has successfully created 10 graduate level courses on lightweight automotive materials, integrated them into master’s and PhD programs in Automotive Systems Engineering, and offered them regularly to the graduate students in the program. In addition, the Center has created a web-based lightweight automotive materials database, conducted research on lightweight automotive materials and organized seminars/symposia on lightweight automotive materials for both academia and industry. The faculty involved with the Center has conducted research on a variety of topics related to design, testing, characterization and processing of lightweight materials for automotive applications and have received numerous research grants from automotive companies and government agencies to support their research. The materials considered included advanced steels, light alloys (aluminum, magnesium and titanium) and fiber reinforced polymer composites. In some of these research projects, CLAMP faculty have collaborated with industry partners and students have used the research facilities at industry locations. The specific objectives of the project during the current funding period (2005 – 2012) were as follows: (1) develop new graduate courses and incorporate them in the automotive systems engineering curriculum (2) improve and update two existing courses on automotive materials and processing (3) upgrade the laboratory facilities used by graduate students to conduct research (4) expand the Lightweight Automotive Materials Database to include additional materials, design case studies and make it more

  5. SU-C-201-06: Utility of Quantitative 3D SPECT/CT Imaging in Patient Specific Internal Dosimetry of 153-Samarium with GATE Monte Carlo Package

    SciTech Connect (OSTI)

    Fallahpoor, M; Abbasi, M; Sen, A; Parach, A; Kalantari, F

    2015-06-15

    Purpose: Patient-specific 3-dimensional (3D) internal dosimetry in targeted radionuclide therapy is essential for efficient treatment. Two major steps to achieve reliable results are: 1) generating quantitative 3D images of radionuclide distribution and attenuation coefficients and 2) using a reliable method for dose calculation based on activity and attenuation map. In this research, internal dosimetry for 153-Samarium (153-Sm) was done by SPECT-CT images coupled GATE Monte Carlo package for internal dosimetry. Methods: A 50 years old woman with bone metastases from breast cancer was prescribed 153-Sm treatment (Gamma: 103keV and beta: 0.81MeV). A SPECT/CT scan was performed with the Siemens Simbia-T scanner. SPECT and CT images were registered using default registration software. SPECT quantification was achieved by compensating for all image degrading factors including body attenuation, Compton scattering and collimator-detector response (CDR). Triple energy window method was used to estimate and eliminate the scattered photons. Iterative ordered-subsets expectation maximization (OSEM) with correction for attenuation and distance-dependent CDR was used for image reconstruction. Bilinear energy mapping is used to convert Hounsfield units in CT image to attenuation map. Organ borders were defined by the itk-SNAP toolkit segmentation on CT image. GATE was then used for internal dose calculation. The Specific Absorbed Fractions (SAFs) and S-values were reported as MIRD schema. Results: The results showed that the largest SAFs and S-values are in osseous organs as expected. S-value for lung is the highest after spine that can be important in 153-Sm therapy. Conclusion: We presented the utility of SPECT-CT images and Monte Carlo for patient-specific dosimetry as a reliable and accurate method. It has several advantages over template-based methods or simplified dose estimation methods. With advent of high speed computers, Monte Carlo can be used for treatment planning

  6. SU-E-E-11: Novel Matching Module for Respiration-Gated Motion Tumor of Cone-Beam Computed Tomography (CBCT) to 4DCT

    SciTech Connect (OSTI)

    Yu, P; Tsai, Y; Nien, H; Chiu, Y; Chang, H; Lin, C; Fu, P; Chang, C; Wu, C

    2015-06-15

    Purpose: Four dimensional computed tomography (4DCT) scans reliably record whole respiratory phase and generate internal target volumes (ITV) for radiotherapy planning. However, image guiding with cone-beam computed tomography (CBCT) cannot acquire all or specific respiratory phases. This study was designed to investigate the correlation between average CT and Maximum Intensity Projection (MIP) from 4DCT and CBCT. Methods: Retrospective respiratory gating were performed by GE Discovery CT590 RT. 4DCT and CBCT data from CRIS Dynamic Thorax Phantom with simulated breathing mode were analyzed. The lung tissue equivalent material encompassed 3 cm sphere tissue equivalent material. Simulated breathing cycle period was set as 4 seconds, 5 seconds and 6 seconds for representing variation of patient breathing cycle time, and the sphere material moved toward inferior and superior direction with 1 cm amplitude simulating lung tumor motion during respiration. Results: Under lung window, the volume ratio of CBCT scans to ITVs derived from 10 phases average scans was 1.00 ± 0.02, and 1.03 ± 0.03 for ratio of CBCT scans to MIP scans. Under abdomen window, the ratio of CBCT scans to ITVs derived from 10 phases average scans was 0.39 ± 0.06, and 0.06 ± 0.00 for ratio of CBCT scans to MIP scans. There was a significant difference between lung window Result and abdomen window Result. For reducing image guiding uncertainty, CBCT window was set with width 500 and level-250. The ratio of CBCT scans to ITVs derived from 4 phases average scans with abdomen window was 1.19 ± 0.02, and 1.06 ± 0.01 for ratio of CBCT to MIP scans. Conclusion: CBCT images with suitable window width and level can efficiently reduce image guiding uncertainty for patient with mobile tumor. By our setting, we can match motion tumor to gating tumor location on planning CT more accurately neglecting other motion artifacts during CBCT scans.

  7. Electron-electron scattering-induced channel hot electron injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors with high-k/metal gate stacks

    SciTech Connect (OSTI)

    Tsai, Jyun-Yu; Liu, Kuan-Ju; Lu, Ying-Hsin; Liu, Xi-Wen; Chang, Ting-Chang; Chen, Ching-En; Ho, Szu-Han; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Lu, Ching-Sen

    2014-10-06

    This work investigates electron-electron scattering (EES)-induced channel hot electron (CHE) injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors (n-MOSFETs) with high-k/metal gate stacks. Many groups have proposed new models (i.e., single-particle and multiple-particle process) to well explain the hot carrier degradation in nanoscale devices and all mechanisms focused on Si-H bond dissociation at the Si/SiO{sub 2} interface. However, for high-k dielectric devices, experiment results show that the channel hot carrier trapping in the pre-existing high-k bulk defects is the main degradation mechanism. Therefore, we propose a model of EES-induced CHE injection to illustrate the trapping-dominant mechanism in nanoscale n-MOSFETs with high-k/metal gate stacks.

  8. Modeling small-signal response of GaN-based metal-insulator-semiconductor high electron mobility transistor gate stack in spill-over regime: Effect of barrier resistance and interface states

    SciTech Connect (OSTI)

    Capriotti, M. E-mail: dionyz.pogany@tuwien.ac.at; Fleury, C.; Oposich, M.; Bethge, O.; Strasser, G.; Pogany, D. E-mail: dionyz.pogany@tuwien.ac.at; Lagger, P.; Ostermaier, C.

    2015-01-14

    We provide theoretical and simulation analysis of the small signal response of SiO{sub 2}/AlGaN/GaN metal insulator semiconductor (MIS) capacitors from depletion to spill over region, where the AlGaN/SiO{sub 2} interface is accumulated with free electrons. A lumped element model of the gate stack, including the response of traps at the III-N/dielectric interface, is proposed and represented in terms of equivalent parallel capacitance, C{sub p}, and conductance, G{sub p}. C{sub p} -voltage and G{sub p} -voltage dependences are modelled taking into account bias dependent AlGaN barrier dynamic resistance R{sub br} and the effective channel resistance. In particular, in the spill-over region, the drop of C{sub p} with the frequency increase can be explained even without taking into account the response of interface traps, solely by considering the intrinsic response of the gate stack (i.e., no trap effects) and the decrease of R{sub br} with the applied forward bias. Furthermore, we show the limitations of the conductance method for the evaluation of the density of interface traps, D{sub it}, from the G{sub p}/ω vs. angular frequency ω curves. A peak in G{sub p}/ω vs. ω occurs even without traps, merely due to the intrinsic frequency response of gate stack. Moreover, the amplitude of the G{sub p}/ω vs. ω peak saturates at high D{sub it}, which can lead to underestimation of D{sub it}. Understanding the complex interplay between the intrinsic gate stack response and the effect of interface traps is relevant for the development of normally on and normally off MIS high electron mobility transistors with stable threshold voltage.

  9. Gate-modulated conductance of few-layer WSe{sub 2} field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states

    SciTech Connect (OSTI)

    Wang, Junjie; Feng, Simin; Rhodes, Daniel; Balicas, Luis; Nguyen, Minh An T.; Watanabe, K.; Taniguchi, T.; Mallouk, Thomas E.; Terrones, Mauricio; Zhu, J.

    2015-04-13

    Two key subjects stand out in the pursuit of semiconductor research: material quality and contact technology. The fledging field of atomically thin transition metal dichalcogenides (TMDCs) faces a number of challenges in both efforts. This work attempts to establish a connection between the two by examining the gate-dependent conductance of few-layer (1-5L) WSe{sub 2} field effect devices. Measurements and modeling of the subgap regime reveal Schottky barrier transistor behavior. We show that transmission through the contact barrier is dominated by thermionic field emission (TFE) at room temperature, despite the lack of intentional doping. The TFE process arises due to a large number of subgap impurity states, the presence of which also leads to high mobility edge carrier densities. The density of states of such impurity states is self-consistently determined to be approximately 1–2 × 10{sup 13}/cm{sup 2}/eV in our devices. We demonstrate that substrate is unlikely to be a major source of the impurity states and suspect that lattice defects within the material itself are primarily responsible. Our experiments provide key information to advance the quality and understanding of TMDC materials and electrical devices.

  10. Evolution of interfacial Fermi level in In{sub 0.53}Ga{sub 0.47}As/high-κ/TiN gate stacks

    SciTech Connect (OSTI)

    Carr, Adra; Rozen, John; Frank, Martin M.; Ando, Takashi; Cartier, Eduard A.; Kerber, Pranita; Narayanan, Vijay; Haight, Richard

    2015-07-06

    The net charge state was probed of metal-oxide-semiconductor gate stacks consisting of In{sub 0.53}Ga{sub 0.47}As /high-κ dielectric/5 nm TiN, for both Al{sub 2}O{sub 3} and HfO{sub 2} dielectrics, via investigation of band bending at the InGaAs/high-κ interface. Using pump-probe photoelectron spectroscopy, changes to band bending were studied for each sequential layer deposited onto the InGaAs substrate and subsequent annealing up to 600 °C. Two behavioral regions were observed in annealing studies: (1) a lower temperature (<350 °C) region, attributed to changes at the high-κ/TiN interface, and (2) a higher temperature region (> 350 °C), associated with a net positive charge increase within the oxide. These band bending measurements delineate the impact of processing steps inherently inaccessible via capacitance-voltage electrical characterization.

  11. Engineering evaluation/cost analysis for the proposed removal of contaminated materials from pad 1 at the Elza Gate site, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    Not Available

    1990-09-01

    This engineering evaluation/cost analysis (EE/CA) has been prepared in support of the proposed removal action for cleanup of radioactively contaminated concrete and soil beneath a building on privately owned commercial property in Oak Ridge, Tennessee. The property, known as the Elza Gate site, became contaminated with uranium-238, radium-226, thorium-232, thorium-230, and decay products as a result of the Manhattan Engineer District storing uranium ore and ore processing residues at the site in the early 1940s. The US Department of Energy (DOE) has responsibility for cleanup of the property under its Formerly Utilized Sites Remedial Action Program (FUSRAP). The DOE plans to remove the cracked and worn concrete pad and contaminated subsoil beneath the pad, after which the property owner/tenant will provide clean backfill and new concrete. Portions of the pad and subsoil are contaminated and, if stored or disposed of improperly, may represent a potential threat to public health or welfare and the environment. The EE/CA report is the appropriate documentation for the proposed removal action, as identified in guidance from the US Environmental Protection Agency. The objective of the EE/CA report, in addition to identifying the planned removal action, is to document the selection of response activities that will mitigate the potential for release of contaminants from the property into the environment and minimize the related threats to public health or welfare and the environment. 7 refs., 2 figs., 3 tabs.

  12. Mitigation of cache memory using an embedded hard-core PPC440 processor in a Virtex-5 Field Programmable Gate Array.

    SciTech Connect (OSTI)

    Learn, Mark Walter

    2010-02-01

    Sandia National Laboratories is currently developing new processing and data communication architectures for use in future satellite payloads. These architectures will leverage the flexibility and performance of state-of-the-art static-random-access-memory-based Field Programmable Gate Arrays (FPGAs). One such FPGA is the radiation-hardened version of the Virtex-5 being developed by Xilinx. However, not all features of this FPGA are being radiation-hardened by design and could still be susceptible to on-orbit upsets. One such feature is the embedded hard-core PPC440 processor. Since this processor is implemented in the FPGA as a hard-core, traditional mitigation approaches such as Triple Modular Redundancy (TMR) are not available to improve the processor's on-orbit reliability. The goal of this work is to investigate techniques that can help mitigate the embedded hard-core PPC440 processor within the Virtex-5 FPGA other than TMR. Implementing various mitigation schemes reliably within the PPC440 offers a powerful reconfigurable computing resource to these node-based processing architectures. This document summarizes the work done on the cache mitigation scheme for the embedded hard-core PPC440 processor within the Virtex-5 FPGAs, and describes in detail the design of the cache mitigation scheme and the testing conducted at the radiation effects facility on the Texas A&M campus.

  13. All-optical logic gate based on transient grating from disperse red 1 doped organic-inorganic hybrid films with an improved figure of merit

    SciTech Connect (OSTI)

    Gao, Tianxi; Que, Wenxiu Shao, Jinyou; Wang, Yushu

    2015-10-21

    Azobenzene dyes have large refractive index near their main resonance, but the poor figure of merit (FOM) limits their potential for all-optical applications. To improve this situation, disperse red 1 (DR1) molecules were dispersed in a sol-gel germanium/Ormosil organic-inorganic hybrid matrix. Z-scan measurement results showed a good compatibility between the dopant and the matrix, and also, an improved FOM was obtained as compared to the DR1/polymer films reported previously. To demonstrate the all-optical signal processing effect, a cw Nd:YAG laser emitting at 532 nm and a He-Ne laser emitting at 632.8 nm were used as pump and probe beams, respectively. DR1 acts as an initiator of the photo-induced transient holographic grating, which is attributed to the trans-cis-trans photoisomerization. Thus, a three inputs AND all-optical logic gate was achieved by using choppers with different frequencies. The detailed mechanism of operation is discussed. These results indicate that the DR1 doped germanium/Ormosil organic-inorganic hybrid film with an improved FOM has a great potential in all-optical devices around its main resonance.

  14. Impact of cyclic plasma treatment on oxygen vacancy defects in TiN/HfZrO/SiON/Si gate stacks

    SciTech Connect (OSTI)

    Bhuyian, Md Nasir Uddin Misra, D.; Poddar, S.; Tapily, K.; Clark, R. D.; Consiglio, S.; Wajda, C. S.; Nakamura, G.; Leusink, G. J.

    2015-05-11

    This work evaluates the defects in HfZrO as a function of Zr addition into HfO{sub 2} and when the dielectric was subjected to a slot-plane-antenna (SPA) plasma treatment in a cyclic process to form TiN/HfZrO/SiON/Si gate stacks. The defect energy levels, estimated by temperature-dependent current-voltage measurements, suggest that Zr addition in HfO{sub 2} modifies the charge state of the oxygen vacancy formation, V{sup +}. The influence of electron affinity variation of Hf and Zr ions on the charged oxygen vacancy levels seems to have contributed to the increase in defect activation energy, E{sub a}, from 0.32 eV to 0.4 eV. The cyclic SPA plasma exposure further reduces the oxygen vacancy formation because of the film densification. When the dielectric was subjected to a constant voltage stress, the charge state oxygen vacancy formation changes to V{sup 2+} and improvement was eliminated. The trap assisted tunneling behavior, as observed by the stress induced leakage current characteristics, further supports the oxygen vacancy formation model.

  15. Geometric validation of self-gating k-space-sorted 4D-MRI vs 4D-CT using a respiratory motion phantom

    SciTech Connect (OSTI)

    Yue, Yong Yang, Wensha; McKenzie, Elizabeth; Tuli, Richard; Wallace, Robert; Fraass, Benedick; Fan, Zhaoyang; Pang, Jianing; Deng, Zixin; Li, Debiao

    2015-10-15

    Purpose: MRI is increasingly being used for radiotherapy planning, simulation, and in-treatment-room motion monitoring. To provide more detailed temporal and spatial MR data for these tasks, we have recently developed a novel self-gated (SG) MRI technique with advantage of k-space phase sorting, high isotropic spatial resolution, and high temporal resolution. The current work describes the validation of this 4D-MRI technique using a MRI- and CT-compatible respiratory motion phantom and comparison to 4D-CT. Methods: The 4D-MRI sequence is based on a spoiled gradient echo-based 3D projection reconstruction sequence with self-gating for 4D-MRI at 3 T. Respiratory phase is resolved by using SG k-space lines as the motion surrogate. 4D-MRI images are reconstructed into ten temporal bins with spatial resolution 1.56 × 1.56 × 1.56 mm{sup 3}. A MRI-CT compatible phantom was designed to validate the performance of the 4D-MRI sequence and 4D-CT imaging. A spherical target (diameter 23 mm, volume 6.37 ml) filled with high-concentration gadolinium (Gd) gel is embedded into a plastic box (35 × 40 × 63 mm{sup 3}) and stabilized with low-concentration Gd gel. The phantom, driven by an air pump, is able to produce human-type breathing patterns between 4 and 30 respiratory cycles/min. 4D-CT of the phantom has been acquired in cine mode, and reconstructed into ten phases with slice thickness 1.25 mm. The 4D images sets were imported into a treatment planning software for target contouring. The geometrical accuracy of the 4D MRI and CT images has been quantified using target volume, flattening, and eccentricity. The target motion was measured by tracking the centroids of the spheres in each individual phase. Motion ground-truth was obtained from input signals and real-time video recordings. Results: The dynamic phantom has been operated in four respiratory rate (RR) settings, 6, 10, 15, and 20/min, and was scanned with 4D-MRI and 4D-CT. 4D-CT images have target

  16. Experimental investigation of bright spots in broadband, gated x-ray images of ignition-scale implosions on the National Ignition Facility

    SciTech Connect (OSTI)

    Barrios, M. A.; Suter, L. J.; Glenn, S.; Benedetti, L. R.; Bradley, D. K.; Collins, G. W.; Hammel, B. A.; Izumi, N.; Ma, T.; Scott, H.; Smalyuk, V. A.; Regan, S. P.; Epstein, R.; Kyrala, G. A.

    2013-07-15

    Bright spots in the hot spot intensity profile of gated x-ray images of ignition-scale implosions at the National Ignition Facility [G. H. Miller et al., Opt. Eng. 443, (2004)] are observed. X-ray images of cryogenically layered deuterium-tritium (DT) and tritium-hydrogen-deuterium (THD) ice capsules, and gas filled plastic shell capsules (Symcap) were recorded along the hohlraum symmetry axis. Heterogeneous mixing of ablator material and fuel into the hot spot (i.e., hot-spot mix) by hydrodynamic instabilities causes the bright spots. Hot-spot mix increases the radiative cooling of the hot spot. Fourier analysis of the x-ray images is used to quantify the evolution of bright spots in both x- and k-space. Bright spot images were azimuthally binned to characterize bright spot location relative to known isolated defects on the capsule surface. A strong correlation is observed between bright spot location and the fill tube for both Symcap and cryogenically layered DT and THD ice targets, indicating the fill tube is a significant seed for the ablation front instability causing hot-spot mix. The fill tube is the predominant seed for Symcaps, while other capsule non-uniformities are dominant seeds for the cryogenically layered DT and THD ice targets. A comparison of the bright spot power observed for Si- and Ge-doped ablator targets shows heterogeneous mix in Symcap targets is mostly material from the doped ablator layer.

  17. Effect of atomic-arrangement matching on La{sub 2}O{sub 3}/Ge heterostructures for epitaxial high-k-gate-stacks

    SciTech Connect (OSTI)

    Kanashima, T. Zenitaka, M.; Kajihara, Y.; Yamada, S.; Hamaya, K.; Nohira, H.

    2015-12-14

    We demonstrate a high-quality La{sub 2}O{sub 3} layer on germanium (Ge) as an epitaxial high-k-gate-insulator, where there is an atomic-arrangement matching condition between La{sub 2}O{sub 3}(001) and Ge(111). Structural analyses reveal that (001)-oriented La{sub 2}O{sub 3} layers were grown epitaxially only when we used Ge(111) despite low growth temperatures less than 300 °C. The permittivity (k) of the La{sub 2}O{sub 3} layer is roughly estimated to be ∼19 from capacitance-voltage (C-V) analyses in Au/La{sub 2}O{sub 3}/Ge structures after post-metallization-annealing treatments, although the C-V curve indicates the presence of carrier traps near the interface. By using X-ray photoelectron spectroscopy analyses, we find that only Ge–O–La bonds are formed at the interface, and the thickness of the equivalent interfacial Ge oxide layer is much smaller than that of GeO{sub 2} monolayer. We discuss a model of the interfacial structure between La{sub 2}O{sub 3} and Ge(111) and comment on the C-V characteristics.

  18. SU-C-210-01: Are Clinically Relevant Dosimetric Endpoints Significantly Better with Gating of Lung SBRT Vs. ITV-Based Treatment?: Results of a Large Cohort Investigation Analyzing Predictive Dosimetric Indicators as a Function of Tumor Volume and Motion Amplitude

    SciTech Connect (OSTI)

    Kim, J; Zhao, B; Ajlouni, M; Movsas, B; Chetty, I.J.

    2015-06-15

    Purpose: To quantitatively compare patient internal target volume (ITV)-based plans with retrospectively generated gated plans to evaluate potential dosimetric improvements in lung toxicity from gated radiotherapy. Methods: Evaluation was conducted for 150 stereotactic body radiation therapy (SBRT) treatment plans for 128 early-stage (T1–T3, <5cm) NSCLC patients. PTV margins were: ITV+5 mm (ITV-plan) and GTV+5 mm (Gated-plan). ITV-based and gated treatment plans were compared on the same free-breathing CT. ITV-based plan constraints were used to re-optimize and recalculate new gated plans. Plans were generated for 3 fractionation regimens: 3×18Gy, 4×12Gy (original), and 5×10Gy. Physical dose was converted to equivalent dose in 2Gy fractions (EQD2), which was used to determine mean lung dose (MLD) and percent volume of lung receiving ≥20Gy (V20). MLD and V20 differences between gating and ITV-based plans were analyzed as a function of both three-dimensional (3D) motion and tumor volume. The low dose region, V5, was also evaluated. Results: MLD and V20 differences between gated and ITV-based plans were larger for lower (1.48±1.32Gy and 1.44±1.29%) than for upper lobe tumors (0.89±0.74Gy and 0.92±0.71%) due to smaller tumor motion (2.9±3.4mm) compared to lower lobe tumors (8.1±6.1mm). Average differences of <1–2% were noted in V5 between ITV and gated plans. Dosimetric differences between gating and ITV-based methods increased with increasing tumor motion and decreasing tumor volume. Overall, average MLD (8.04±3.92Gy) and V20 (8.29±4.33%) values for ITV-based plans were already well below clinical guidelines, even for the 3×18Gy dose scheme, for which largest differences were noted relative to gated plans. Similar results were obtained for 5×10Gy and 4×12Gy regimens. Conclusion: Clinically relevant improvement in pulmonary toxicity, based on predictors of radiation pneumonitis (MLD and V20) was not generally observed, though improvement for tumors

  19. A versatile LabVIEW and field-programmable gate array-based scanning probe microscope for in operando electronic device characterization

    SciTech Connect (OSTI)

    Berger, Andrew J. Page, Michael R.; Young, Justin R.; Bhallamudi, Vidya P.; Johnston-Halperin, Ezekiel; Pelekhov, Denis V.; Hammel, P. Chris; Jacob, Jan; Lewis, Jim; Wenzel, Lothar

    2014-12-15

    Understanding the complex properties of electronic and spintronic devices at the micro- and nano-scale is a topic of intense current interest as it becomes increasingly important for scientific progress and technological applications. In operando characterization of such devices by scanning probe techniques is particularly well-suited for the microscopic study of these properties. We have developed a scanning probe microscope (SPM) which is capable of both standard force imaging (atomic, magnetic, electrostatic) and simultaneous electrical transport measurements. We utilize flexible and inexpensive FPGA (field-programmable gate array) hardware and a custom software framework developed in National Instrument's LabVIEW environment to perform the various aspects of microscope operation and device measurement. The FPGA-based approach enables sensitive, real-time cantilever frequency-shift detection. Using this system, we demonstrate electrostatic force microscopy of an electrically biased graphene field-effect transistor device. The combination of SPM and electrical transport also enables imaging of the transport response to a localized perturbation provided by the scanned cantilever tip. Facilitated by the broad presence of LabVIEW in the experimental sciences and the openness of our software solution, our system permits a wide variety of combined scanning and transport measurements by providing standardized interfaces and flexible access to all aspects of a measurement (input and output signals, and processed data). Our system also enables precise control of timing (synchronization of scanning and transport operations) and implementation of sophisticated feedback protocols, and thus should be broadly interesting and useful to practitioners in the field.

  20. Effect of proton irradiation dose on InAlN/GaN metal-oxide semiconductor high electron mobility transistors with Al2O3 gate oxide

    DOE PAGES-Beta [OSTI]

    Ahn, Shihyun; Kim, Byung -Jae; Lin, Yi -Hsuan; Ren, Fan; Pearton, Stephen J.; Yang, Gwangseok; Kim, Jihyun; Kravchenko, Ivan I.

    2016-07-26

    The effects of proton irradiation on the dc performance of InAlN/GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs) with Al2O3 as the gate oxide were investigated. The InAlN/GaN MOSHEMTs were irradiated with doses ranging from 1×1013 to 1×1015cm–2 at a fixed energy of 5MeV. There was minimal damage induced in the two dimensional electron gas at the lowest irradiation dose with no measurable increase in sheet resistance, whereas a 9.7% increase of the sheet resistance was observed at the highest irradiation dose. By sharp contrast, all irradiation doses created more severe degradation in the Ohmic metal contacts, with increases of specificmore » contact resistance from 54% to 114% over the range of doses investigated. These resulted in source-drain current–voltage decreases ranging from 96 to 242 mA/mm over this dose range. The trap density determined from temperature dependent drain current subthreshold swing measurements increased from 1.6 × 1013 cm–2 V–1 for the reference MOSHEMTs to 6.7 × 1013 cm–2 V–1 for devices irradiated with the highest dose. In conclusion, the carrier removal rate was 1287 ± 64 cm–1, higher than the authors previously observed in AlGaN/GaN MOSHEMTs for the same proton energy and consistent with the lower average bond energy of the InAlN.« less

  1. Anti-addiction drug ibogaine inhibits voltage-gated ionic currents: A study to assess the drug's cardiac ion channel profile

    SciTech Connect (OSTI)

    Koenig, Xaver; Kovar, Michael; Rubi, Lena; Mike, Agnes K.; Lukacs, Peter; Gawali, Vaibhavkumar S.; Todt, Hannes; Hilber, Karlheinz; Sandtner, Walter

    2013-12-01

    The plant alkaloid ibogaine has promising anti-addictive properties. Albeit not licenced as a therapeutic drug, and despite hints that ibogaine may perturb the heart rhythm, this alkaloid is used to treat drug addicts. We have recently reported that ibogaine inhibits human ERG (hERG) potassium channels at concentrations similar to the drugs affinity for several of its known brain targets. Thereby the drug may disturb the heart's electrophysiology. Here, to assess the drug's cardiac ion channel profile in more detail, we studied the effects of ibogaine and its congener 18-Methoxycoronaridine (18-MC) on various cardiac voltage-gated ion channels. We confirmed that heterologously expressed hERG currents are reduced by ibogaine in low micromolar concentrations. Moreover, at higher concentrations, the drug also reduced human Na{sub v}1.5 sodium and Ca{sub v}1.2 calcium currents. Ion currents were as well reduced by 18-MC, yet with diminished potency. Unexpectedly, although blocking hERG channels, ibogaine did not prolong the action potential (AP) in guinea pig cardiomyocytes at low micromolar concentrations. Higher concentrations (≥ 10 μM) even shortened the AP. These findings can be explained by the drug's calcium channel inhibition, which counteracts the AP-prolonging effect generated by hERG blockade. Implementation of ibogaine's inhibitory effects on human ion channels in a computer model of a ventricular cardiomyocyte, on the other hand, suggested that ibogaine does prolong the AP in the human heart. We conclude that therapeutic concentrations of ibogaine have the propensity to prolong the QT interval of the electrocardiogram in humans. In some cases this may lead to cardiac arrhythmias. - Highlights: • We study effects of anti-addiction drug ibogaine on ionic currents in cardiomyocytes. • We assess the cardiac ion channel profile of ibogaine. • Ibogaine inhibits hERG potassium, sodium and calcium channels. • Ibogaine’s effects on ion channels are a

  2. Coordinated role of voltage-gated sodium channels and the Na{sup +}/H{sup +} exchanger in sustaining microglial activation during inflammation

    SciTech Connect (OSTI)

    Hossain, Muhammad M.; Sonsalla, Patricia K.; Richardson, Jason R.

    2013-12-01

    Persistent neuroinflammation and microglial activation play an integral role in the pathogenesis of many neurological disorders. We investigated the role of voltage-gated sodium channels (VGSC) and Na{sup +}/H{sup +} exchangers (NHE) in the activation of immortalized microglial cells (BV-2) after lipopolysaccharide (LPS) exposure. LPS (10 and 100 ng/ml) caused a dose- and time-dependent accumulation of intracellular sodium [(Na{sup +}){sub i}] in BV-2 cells. Pre-treatment of cells with the VGSC antagonist tetrodotoxin (TTX, 1 μM) abolished short-term Na{sup +} influx, but was unable to prevent the accumulation of (Na{sup +}){sub i} observed at 6 and 24 h after LPS exposure. The NHE inhibitor cariporide (1 μM) significantly reduced accumulation of (Na{sup +}){sub i} 6 and 24 h after LPS exposure. Furthermore, LPS increased the mRNA expression and protein level of NHE-1 in a dose- and time-dependent manner, which was significantly reduced after co-treatment with TTX and/or cariporide. LPS increased production of TNF-α, ROS, and H{sub 2}O{sub 2} and expression of gp91{sup phox}, an active subunit of NADPH oxidase, in a dose- and time-dependent manner, which was significantly reduced by TTX or TTX + cariporide. Collectively, these data demonstrate a closely-linked temporal relationship between VGSC and NHE-1 in regulating function in activated microglia, which may provide avenues for therapeutic interventions aimed at reducing neuroinflammation. - Highlights: • LPS causes immediate increase in sodium through VGSC and subsequently through the NHE-1. • Inhibition of VGSC reduces increases in NHE-1 and gp91{sup phox}. • Inhibition of VGSC and NHE-1 reduces NADPH oxidase-mediated Tnf-α, ROS, and H{sub 2}O{sub 2} production. • NHE-1 and Na{sub v}1.6 may be viable targets for therapeutic interventions to reduce neuroinflammation in neurodegenerative disease.

  3. from Microsoft's Bill Gates. Summer

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Power surge (page 2) Developing fuel for next- generation nuclear reactors, with ... Y-12 will fabricate test fuel pins for irradiation within a research sodium fast reactor. ...

  4. Gated charged-particle trap

    DOE Patents [OSTI]

    Benner, W. Henry

    1999-01-01

    The design and operation of a new type of charged-particle trap provides simultaneous measurements of mass, charge, and velocity of large electrospray ions. The trap consists of a detector tube mounted between two sets of center-bored trapping plates. Voltages applied to the trapping plates define symmetrically-opposing potential valleys which guide axially-injected ions to cycle back and forth through the charge-detection tube. A low noise charge-sensitive amplifier, connected to the tube, reproduces the image charge of individual ions as they pass through the detector tube. Ion mass is calculated from measurement of ion charge and velocity following each passage through the detector.

  5. Gated charged-particle trap

    DOE Patents [OSTI]

    Benner, W.H.

    1999-03-09

    The design and operation of a new type of charged-particle trap provides simultaneous measurements of mass, charge, and velocity of large electrospray ions. The trap consists of a detector tube mounted between two sets of center-bored trapping plates. Voltages applied to the trapping plates define symmetrically-opposing potential valleys which guide axially-injected ions to cycle back and forth through the charge-detection tube. A low noise charge-sensitive amplifier, connected to the tube, reproduces the image charge of individual ions as they pass through the detector tube. Ion mass is calculated from measurement of ion charge and velocity following each passage through the detector. 5 figs.

  6. Hydroacoustic Evaluation of Juvenile Salmonid Passage at The Dalles Dam in 2004

    SciTech Connect (OSTI)

    Johnson, Gary E.; Hanks, Michael E.; Khan, Fenton; Cook, Chris B.; Hedgepeth, J; Mueller, Robert P.; Rakowski, Cynthia L.; Richmond, Marshall C.; Sargeant, Susan L.; Serkowski, John A.; Skalski, John R.

    2005-06-01

    The U.S. Army Corps of Engineers Portland District engaged the Pacific Northwest National Laboratory to evaluate juvenile salmon passage at The Dalles Dam in 2004 to inform decisions about long-term measures and operations to enhance sluiceway and spill passage and reduce turbine passage to improve smolt survival at the dam. PNNL used fixed-location hydroacoustic sampling across the entire project, especially at the sluiceway and spillway, using multiple split-beam transducers at selected locations. At the sluiceway nearfield, we used an acoustic camera to track fish. The fish data were interpreted and integrated with hydraulic data from a CFD model and in-field ADCP measurements. Two sluiceway operations were compared: West only (SL 1) vs. West+East (SL 1 + SL 18). Based on our findings, we concluded that The Dalles Dam sluiceway has the potential to be highly efficient and effective at passing juvenile salmonids. This potential could be tapped with hydraulic and entrance enhancements to the sluiceway. We recommended the following: (1) six rather than three sluice gates should be opened to take advantage of the maximum hydraulic capacity of the sluiceway. (2) The turbine units below open sluice gates should be operated as a standard fish operations procedure. (3) In 2005, the Corps and fisheries agencies should consider operating sluice gates in one or more of the following combinations of six gates: (a) SL 1-1, 1-2, 1-3 and SL 18-1, 18-2, 18-3 (repeat 2004 operation), (b) SL 1-1, 1-2, 1-3 and SL 11-1, 11-2, 11-3, or (c) SL 1-1, 1-2, 1-3 and SL 2-1, 2-2, 2-3. The following elements for surface flow bypasses which should be considered during design of any sluiceway enhancements at The Dalles Dam: (1) form an extensive surface flow bypass flow net (surface bypass discharge greater than {approx}7% of total project discharge), (2) create a gradual increase in water velocity approaching the surface flow bypass (ideally, acceleration < 1 m/s/m), (3) make water

  7. Structures of pseudechetoxin and pseudecin, two snake-venom cysteine-rich secretory proteins that target cyclic nucleotide-gated ion channels: implications for movement of the C-terminal cysteine-rich domain

    SciTech Connect (OSTI)

    Suzuki, Nobuhiro; Yamazaki, Yasuo; Brown, R. Lane; Fujimoto, Zui; Morita, Takashi; Mizuno, Hiroshi

    2008-10-01

    The structures of pseudechetoxin and pseudecin suggest that both proteins bind to cyclic nucleotide-gated ion channels in a manner in which the concave surface occludes the pore entrance. Cyclic nucleotide-gated (CNG) ion channels play pivotal roles in sensory transduction by retinal photoreceptors and olfactory neurons. The elapid snake toxins pseudechetoxin (PsTx) and pseudecin (Pdc) are the only known protein blockers of CNG channels. These toxins belong to a cysteine-rich secretory protein (CRISP) family containing an N-terminal pathogenesis-related proteins of group 1 (PR-1) domain and a C-terminal cysteine-rich domain (CRD). PsTx and Pdc are highly homologous proteins, but their blocking affinities on CNG channels are different: PsTx blocks both the olfactory and retinal channels with ∼15–30-fold higher affinity than Pdc. To gain further insights into their structure and function, the crystal structures of PsTx, Pdc and Zn{sup 2+}-bound Pdc were determined. The structures revealed that most of the amino-acid-residue differences between PsTx and Pdc are located around the concave surface formed between the PR-1 domain and the CRD, suggesting that the concave surface is functionally important for CNG-channel binding and inhibition. A structural comparison in the presence and absence of Zn{sup 2+} ion demonstrated that the concave surface can open and close owing to movement of the CRD upon Zn{sup 2+} binding. The data suggest that PsTx and Pdc occlude the pore entrance and that the dynamic motion of the concave surface facilitates interaction with the CNG channels.

  8. GaSb molecular beam epitaxial growth on p-InP(001) and passivation with in situ deposited Al{sub 2}O{sub 3} gate oxide

    SciTech Connect (OSTI)

    Merckling, C.; Brammertz, G.; Hoffmann, T. Y.; Caymax, M.; Dekoster, J.; Sun, X.; Alian, A.; Heyns, M.; Afanas'ev, V. V.

    2011-04-01

    The integration of high carrier mobility materials into future CMOS generations is presently being studied in order to increase drive current capability and to decrease power consumption in future generation CMOS devices. If III-V materials are the candidates of choice for n-type channel devices, antimonide-based semiconductors present high hole mobility and could be used for p-type channel devices. In this work we first demonstrate the heteroepitaxy of fully relaxed GaSb epilayers on InP(001) substrates. In a second part, the properties of the Al{sub 2}O{sub 3}/GaSb interface have been studied by in situ deposition of an Al{sub 2}O{sub 3} high-{kappa} gate dielectric. The interface is abrupt without any substantial interfacial layer, and is characterized by high conduction and valence band offsets. Finally, MOS capacitors show well-behaved C-V with relatively low D{sub it} along the bandgap, these results point out an efficient electrical passivation of the Al{sub 2}O{sub 3}/GaSb interface.

  9. Predicting transient upset in gate arrays

    SciTech Connect (OSTI)

    Woodruff, R.L.; Nelson, D.A.; Scherr, S.

    1987-12-01

    A simulation program for predicting dose rate upset has been adapted from the Power Analysis for Integrated Circuits program (PANIC). The program provides detailed analysis on the V/sub CC/V/sub SS/ difference at any location within the array as well as the amount of photocurrent being collected, as a function of design. The simulation has been compared to experiment for a specific design and was found to correlate to within 20% at 5 volts.

  10. Electric actuator for the sempell gate valve

    SciTech Connect (OSTI)

    Herbstritt, E.C.

    1996-12-01

    The automation of valves has a primary importance in the scope of central control and regulation of power generation processes in power plants and especially in nuclear power plants. AUMA WERNER RIESTER GmbH & Co. KG is considered a leading manufacturer of electric actuators for the automation of valves. More than 30 years experience in designing, developing, and manufacturing provide a sound basis for offering reliable products, especially for nuclear applications. The quality assurance system of AUMA was developed according to 10 CFR 50, Appendix B and has been consistently accomplished. The program was certified by the TUV Germany (Technical Authorized Inspection Agency), according to ISO-9001, in 1994. AUMA offers two actuator type ranges for application in nuclear power plants. The range SAI is qualified according to IEEE 382-1978 and is designed for inside containment. The range SAN is qualified according to IEEE 382-1985 and KTA 3504-1988 for use in non-radioactive applications in the nuclear power plants.

  11. Optical gating of perylene bisimide fluorescence usingdithienylcyclop...

    Office of Scientific and Technical Information (OSTI)

    The emission of millions of fluorescence photons from a chromophore is controlled by the absorption of a few tens of photons in a photochromic molecule. The parameters that ...

  12. GATE: Energy Efficient Vehicles for Sustainable Mobility

    Energy.gov [DOE]

    2013 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting

  13. WBG Gate Drivers for Power Modules

    Energy.gov [DOE]

    2013 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting

  14. Women @ Energy: Dianne Gates-Anderson

    Energy.gov [DOE]

    "I loved chemistry from my very first chemistry course in the tenth grade. Of the sciences, I found chemistry the most fascinating because you can use the principles of chemistry to explain so much about everything around you."

  15. Electrochemical Cell Design With A Hollow Gate

    DOE Patents [OSTI]

    Romero, Antonio; Oweis, Salah; Chagnon, Guy; Staniewicz, Robert; Briscoe, Douglas

    2000-02-01

    An electrochemical cell having a spiral winding around a central core, wherein the central core is provided with longitudinal grooves on its outer surface to facilitate electrolyte filing and accommodate overpressure. The core itself improves dissipation of heat generated along the center of the cell, and the hollow core design allows the cell core to have a larger radius, permitting the "jelly roll" winding to begin at a larger radius and thereby facilitate the initial turns of the winding by decreasing the amount of bending required of the electrode laminate at the beginning of the winding operation. The hollow core also provides mechanical support end-to-end. A pair of washers are used at each end of the cell to sandwich current collection tabs in a manner that improves electrical and thermal conductivity while also providing structural integrity.

  16. Impact of La{sub 2}O{sub 3} interfacial layers on InGaAs metal-oxide-semiconductor interface properties in Al{sub 2}O{sub 3}/La{sub 2}O{sub 3}/InGaAs gate stacks deposited by atomic-layer-deposition

    SciTech Connect (OSTI)

    Chang, C.-Y. Takenaka, M.; Takagi, S.; Ichikawa, O.; Osada, T.; Hata, M.; Yamada, H.

    2015-08-28

    We examine the electrical properties of atomic layer deposition (ALD) La{sub 2}O{sub 3}/InGaAs and Al{sub 2}O{sub 3}/La{sub 2}O{sub 3}/InGaAs metal-oxide-semiconductor (MOS) capacitors. It is found that the thick ALD La{sub 2}O{sub 3}/InGaAs interface provides low interface state density (D{sub it}) with the minimum value of ∼3 × 10{sup 11} cm{sup −2} eV{sup −1}, which is attributable to the excellent La{sub 2}O{sub 3} passivation effect for InGaAs surfaces. It is observed, on the other hand, that there are a large amount of slow traps and border traps in La{sub 2}O{sub 3}. In order to simultaneously satisfy low D{sub it} and small hysteresis, the effectiveness of Al{sub 2}O{sub 3}/La{sub 2}O{sub 3}/InGaAs gate stacks with ultrathin La{sub 2}O{sub 3} interfacial layers is in addition evaluated. The reduction of the La{sub 2}O{sub 3} thickness to 0.4 nm in Al{sub 2}O{sub 3}/La{sub 2}O{sub 3}/InGaAs gate stacks leads to the decrease in hysteresis. On the other hand, D{sub it} of the Al{sub 2}O{sub 3}/La{sub 2}O{sub 3}/InGaAs interfaces becomes higher than that of the La{sub 2}O{sub 3}/InGaAs ones, attributable to the diffusion of Al{sub 2}O{sub 3} through La{sub 2}O{sub 3} into InGaAs and resulting modification of the La{sub 2}O{sub 3}/InGaAs interface structure. As a result of the effective passivation effect of La{sub 2}O{sub 3} on InGaAs, however, the Al{sub 2}O{sub 3}/10 cycle (0.4 nm) La{sub 2}O{sub 3}/InGaAs gate stacks can realize still lower D{sub it} with maintaining small hysteresis and low leakage current than the conventional Al{sub 2}O{sub 3}/InGaAs MOS interfaces.

  17. Chi-Nu "Gate Review" (Conference) | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    Authors: White, Morgan C. 1 ; Haight, Robert C. 1 ; Perdue, Brent A. 1 ; Wu, Ching-Yen 1 ; Talou, Patrick 1 ; Taddeucci, Terry N. 1 ; Neudecker, Denise 1 + Show ...

  18. PENN STATE DOE GRADUATE AUTOMOTIVE TECHNOLOGY EDUCATION (GATE...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    hybrids - electric and hybrid vehicle configurations - vehicle modeling (Autonomie) - fuel cells - hardwaresoftwarecomponent in loop - power electronics - combustion -...

  19. Ultrafast terahertz gating of the polarization and giant nonlinear...

    Office of Scientific and Technical Information (OSTI)

    Terahertz pulses are applied as an all-optical bias to ferroelectric thin-film BiFeO3 while monitoring the time-dependent ferroelectric polarization through its nonlinear optical ...

  20. Method for using polarization gating to measure a scattering sample

    SciTech Connect (OSTI)

    Baba, Justin S.

    2015-08-04

    Described herein are systems, devices, and methods facilitating optical characterization of scattering samples. A polarized optical beam can be directed to pass through a sample to be tested. The optical beam exiting the sample can then be analyzed to determine its degree of polarization, from which other properties of the sample can be determined. In some cases, an apparatus can include a source of an optical beam, an input polarizer, a sample, an output polarizer, and a photodetector. In some cases, a signal from a photodetector can be processed through attenuation, variable offset, and variable gain.

  1. Looking at Transistor Gate Oxide Formation in Real Time

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Hamburg (Germany); Overseas Advanced Education and Research Program from the Ministry of Education, Culture, Sports, Science, and Technology of Japan; Creative Research...

  2. Looking at Transistor Gate Oxide Formation in Real Time

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    University, Japan); B.S. Mun (Hanyang University, Korea, and ALS); M. Rossi, and Z. Hussain (ALS); P.N. Ross Jr. (Berkeley Lab); C.S. Fadley (University of California at...

  3. 2006-2011 GATE program at the Ohio State University

    Energy.gov [DOE]

    2011 DOE Hydrogen and Fuel Cells Program, and Vehicle Technologies Program Annual Merit Review and Peer Evaluation

  4. Looking at Transistor Gate Oxide Formation in Real Time

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    on the oxidation process at this thickness. Available results are either for thicker layers grown under high-pressure conditions or for only the first couple of monolayers...

  5. Exponential of a matrix, a nonlinear problem, and quantum gates

    SciTech Connect (OSTI)

    Steeb, Willi-Hans; Hardy, Yorick

    2015-01-15

    We describe solutions of the matrix equation exp(z(A − I{sub n})) = A, where z ∈ ℂ. Applications in quantum computing are given. Both normal and non-normal matrices are studied. For normal matrices, the Lambert W-function plays a central role.

  6. Determination of prospective displacement-based gate threshold...

    Office of Scientific and Technical Information (OSTI)

    R.; Beddar, S. Department of Radiation Physics, University of Texas M.D. Anderson Cancer Center, Houston, Texas 77030 (United States) 62 RADIOLOGY AND NUCLEAR MEDICINE;...

  7. Ferroelectric Gated Electrcial Transport in CdS Nanotetrapods...

    Office of Scientific and Technical Information (OSTI)

    DOE Contract Number: DE-AC05-00OR22725 Resource Type: Journal Article Resource Relation: Journal Name: Nano Letters; Journal Volume: 11; Journal Issue: 5 Research Org: Oak Ridge ...

  8. Gating of Permanent Molds for Aluminum Casting (Technical Report...

    Office of Scientific and Technical Information (OSTI)

    pattern and heat flow behavior in permanent mold castings. Equipment and procedure for real time X-Ray radiography of molten aluminum flow into permanent molds have been developed. ...

  9. Slow Detrapping Transients due to Gate and Drain Bias Stress...

    Office of Scientific and Technical Information (OSTI)

    Resource Type: Journal Article Resource Relation: Journal Name: IEEE Transactions on Electron Devices; Related Information: Proposed for publication in IEEE Transactions on ...

  10. PENN STATE DOE GRADUATE AUTOMOTIVE TECHNOLOGY EDUCATION (GATE) PROGRAM FOR

    Energy.gov [DOE]

    2009 DOE Hydrogen Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting, May 18-22, 2009 -- Washington D.C.

  11. Direct Injection Compression Ignition Diesel Automotive Technology Education GATE Program

    SciTech Connect (OSTI)

    Anderson, Carl L

    2006-09-25

    The underlying goal of this prqject was to provide multi-disciplinary engineering training for graduate students in the area of internal combustion engines, specifically in direct injection compression ignition engines. The program was designed to educate highly qualified engineers and scientists that will seek to overcome teclmological barriers preventing the development and production of cost-effective high-efficiency vehicles for the U.S. market. Fu1iher, these highly qualified engineers and scientists will foster an educational process to train a future workforce of automotive engineering professionals who are knowledgeable about and have experience in developing and commercializing critical advanced automotive teclmologies. Eight objectives were defmed to accomplish this goal: 1. Develop an interdisciplinary internal co1nbustion engine curriculum emphasizing direct injected combustion ignited diesel engines. 2. Encourage and promote interdisciplinary interaction of the faculty. 3. Offer a Ph.D. degree in internal combustion engines based upon an interdisciplinary cuniculum. 4. Promote strong interaction with indusuy, develop a sense of responsibility with industry and pursue a self sustaining program. 5. Establish collaborative arrangements and network universities active in internal combustion engine study. 6. Further Enhance a First Class educational facility. 7. Establish 'off-campus' M.S. and Ph.D. engine programs of study at various indusuial sites. 8. Extend and Enhance the Graduate Experience.

  12. The University of Tennessee's GATE Center for Hybrid Systems

    Energy.gov [DOE]

    2011 DOE Hydrogen and Fuel Cells Program, and Vehicle Technologies Program Annual Merit Review and Peer Evaluation

  13. Looking at Transistor Gate Oxide Formation in Real Time

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    transistors (about 4,000 per person) are produced worldwide as part of the integrated circuits that drive information technology. Each of these transistors contains an...

  14. GATE Center for Automotive Fuel Cell Systems at Virginia Tech

    Energy.gov [DOE]

    2009 DOE Hydrogen Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting, May 18-22, 2009 -- Washington D.C.

  15. GATE Center for Automotive Fuel Cell Systems at Virginia Tech

    Energy.gov [DOE]

    2011 DOE Hydrogen and Fuel Cells Program, and Vehicle Technologies Program Annual Merit Review and Peer Evaluation

  16. Voltage-Gated Hydrophobic Nanopores (Journal Article) | SciTech...

    Office of Scientific and Technical Information (OSTI)

    OSTI Identifier: 1024323 DOE Contract Number: DE-AC05-00OR22725 Resource Type: Journal Article Resource Relation: Journal Name: ACS Nano; Journal Volume: 5; Journal Issue: 9 ...

  17. Measuring ultrashort pulses using frequency-resolved optical gating

    SciTech Connect (OSTI)

    Trebino, R.

    1993-12-01

    The purpose of this program is the development of techniques for the measurement of ultrafast events important in gas-phase combustion chemistry. Specifically, goals of this program include the development of fundamental concepts and spectroscopic techniques that will augment the information currently available with ultrafast laser techniques. Of equal importance is the development of technology for ultrafast spectroscopy. For example, methods for the production and measurement of ultrashort pulses at wavelengths important for these studies is an important goal. Because the specific vibrational motion excited in a molecule depends sensitively on the intensity, I(t), and the phase, {psi}(t), of the ultrashort pulse used to excite the motion, it is critical to measure both of these quantities for an individual pulse. Unfortunately, this has remained an unsolved problem for many years. Fortunately, this year, the authors present a technique that achieves this goal.

  18. Gate-tunable exchange coupling between cobalt clusters on graphene...

    Office of Scientific and Technical Information (OSTI)

    Publication Date: 2013-04-10 OSTI Identifier: 1104471 Type: Publisher's Accepted Manuscript Journal Name: Physical Review B Additional Journal Information: Journal Volume: 87; ...

  19. Experimental study of neutron induced background noise on gated...

    Office of Scientific and Technical Information (OSTI)

    Authors: Izumi, N. ; Hagmann, C. ; Stone, G. ; Hey, D. ; Glenn, S. ; Conder, A. ; Teruya, A. ; Sorce, C. ; Tommasini, R. ; Stoeffl, W. ; Springer, P. ; Landen, O. L. ; Eckart, M. ; ...

  20. Gating of Permanent Molds for ALuminum Casting (Technical Report...

    Office of Scientific and Technical Information (OSTI)

    A paper copy of this document is also available for sale to the public from the National Technical Information Service, Springfield, VA at www.ntis.gov. This report summarizes a ...

  1. Gating of Permanent Molds for Aluminum Casting (Technical Report...

    Office of Scientific and Technical Information (OSTI)

    A paper copy of this document is also available for sale to the public from the National Technical Information Service, Springfield, VA at www.ntis.gov. This report summarizes a ...

  2. GATE Center of Excellence in Lightweight Materials and Manufacturing Technologies

    Energy.gov [DOE]

    2013 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting

  3. GATE Center of Excellence in Sustainable Vehicle Systems

    Energy.gov [DOE]

    2013 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting

  4. Optimization efforts in gated x-ray intensifiers (Conference...

    Office of Scientific and Technical Information (OSTI)

    Higher resolution is achieved by coupling increased extraction voltage with less inter-particle diffusion of fluorescent and phosphorescent photons. The aluminum overcoat serves to ...

  5. Isolated Photosystem I Reaction Centers on a Functionalized Gated...

    Office of Scientific and Technical Information (OSTI)

    The captured photon triggers rapid charge separation and the photon energy is converted into an electrostatic potential across the nanometer-scale nm reaction centers. The ...

  6. Generic Issue 87: Flexible wedge gate valve test program

    SciTech Connect (OSTI)

    Steele, R. Jr.; DeWall, K.G.; Watkins, J.C. )

    1991-01-01

    Qualification and flow isolation tests were conducted to analyze the ability of selected boiling water reactor process valves to perform their containment isolation functions at high energy pipe break conditions and other more normal flow conditions. Numerous parameters were measured to assess valve and motor-operator performance at various valve loadings and to assess industry practices for predicting valve and motor operator requirements. The valves tested were representative of those used in reactor water cleanup systems in boiling water reactors and those used in boiling water reactor high-pressure coolant injection (HPCI) steam lines. These tests will provide further information for the US Nuclear Regulatory Commission Generic Issue-87, Failure of the HPCI Steam Line Without Isolation,'' and Generic Letter 89--10, Safety-related Motor Operated Valve Testing and Surveillance.'' 6 refs., 54 figs., 4 tabs.

  7. GATE Center of Excellence at UAB in Lightweight Materials for...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    09 DOE Hydrogen Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting, May 18-22, 2009 -- Washington D.C. ti10vaidya...

  8. GATE Center of Excellence at UAB in Lightweight Materials for...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    11 DOE Hydrogen and Fuel Cells Program, and Vehicle Technologies Program Annual Merit Review and Peer Evaluation ti012vaidya2011o...

  9. Women @ Energy: Dianne Gates-Anderson | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    students to consider technical careers. 1) What inspired you to work in STEM? I loved chemistry from my very first chemistry course in the tenth grade. Of the sciences, I found...

  10. Self-terminating diffraction gates femtosecond X-ray nanocrystallograp...

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    without the requirement for the pulse to terminate before the onset of sample damage. ... indicate that current X-ray free-electron laser technology5 should enable structural ...

  11. The University of Tennessee's GATE Center for Hybrid Systems

    Energy.gov [DOE]

    2009 DOE Hydrogen Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting, May 18-22, 2009 -- Washington D.C.

  12. Determination of prospective displacement-based gate threshold...

    Office of Scientific and Technical Information (OSTI)

    Author Affiliations Department of Radiation Physics, University of Texas M.D. Anderson Cancer Center, Houston, Texas 77030 (United States) Publication Date: 2007-11-15 OSTI...

  13. Looking at Transistor Gate Oxide Formation in Real Time

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Advanced Education and Research Program from the Ministry of Education, Culture, Sports, Science, and Technology of Japan; Creative Research Initiatives of MOSTKOSEF...

  14. Reconnecting fragmented sturgeon populations in North American rivers

    DOE PAGES-Beta [OSTI]

    Jager, Yetta; Forsythe, Patrick S.; McLaughlin, Robert L.; Joseph J. Cech, Jr.; Parsley, Michael; Elliott, Robert F.; Pracheil, Brenda M.

    2016-02-24

    The majority of large North American rivers are fragmented by dams that interrupt migrations of wide-ranging fishes like sturgeons. Reconnecting habitat is viewed as an important means of protecting sturgeon species in U.S. rivers because these species have lost between 5% and 60% of their historical ranges. Unfortunately, facilities designed to pass other fishes have rarely worked well for sturgeons. The most successful passage facilities were sized appropriately for sturgeons and accommodated bottom-oriented species. For upstream passage, facilities with large entrances, full-depth guidance systems, large lifts, or wide fishways without obstructions or tight turns worked well. However, facilitating upstream migrationmore » is only half the battle. Broader recovery for linked sturgeon populations requires safe round-trip passage involving multiple dams. The most successful downstream passage facilities included nature-like fishways, large canal bypasses, and bottom-draw sluice gates. We outline an adaptive approach to implementing passage that begins with temporary programs and structures and monitors success both at the scale of individual fish at individual dams and the scale of metapopulations in a river basin. The challenge will be to learn from past efforts and reconnect North American sturgeon populations in a way that promotes range expansion and facilitates population recovery.« less

  15. Albany Center map_rev36-10

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Bro adw ay Stre et Lib ert y Str ee t Queen Avenue N S1 S2 S3 Locked Gate Locked Gate Locked Gate Locked Gate Locked Gate Locked Gate Walk Gate (locked) Walk Gate (locked) Walk...

  16. EA-1070: Revised Finding of No Significant Impact

    Energy.gov [DOE]

    Natural Fluctuation of Water Level in Par Pond and Reduced Water Flow in Steel Creek below L Lake at the Savannah River Site

  17. MHK Projects/Ijsselmeer barrage at Den Oever NL | Open Energy...

    Open Energy Information (Open El) [EERE & EIA]

    Project Phase Phase 3 Project Details In 2005, a full scale 2.8m diameter, 35 kW prototype device (Tocardo Aqua 2800) was successfully tested in the exhaust sluices of the...

  18. Safety equipment list for 241-C-106 waste retrieval, Project W-320: Revision 1

    SciTech Connect (OSTI)

    Conner, J.C.

    1994-11-15

    The goals of the C-106 sluicing operation are: (1) to stabilize the tank by reducing the heat load in the tank to less than 42 MJ/hr (40,000 Btu/hour), and (2) to initiate demonstration of single-shell tank (SST) retrieval technology. The purpose of this supporting document (SD) is as follows: (1) to provide safety classifications for items (systems, structures, equipment, components, or parts) for the waste retrieval sluicing system (WRSS), and (2) to document and methodology used to develop safety classifications. Appropriate references are made with regard to use of existing systems, structures, equipments, components, and parts for C-106 single-shell transfer tank located in the C Tank Farm, and 241-AY-102 (AY-102) double shell receiver tanks (DST) located in the Aging Waste Facility (AWF). The Waste Retrieval Sluicing System consists of two transfer lines that would connect the two tanks, one to carry the sluiced waste slurry to AY-102, and the other to return the supernatant liquid to C-106. The supernatant, or alternate fluid, will be used to mobilize waste in C-106 for the sluicing process. The equipment necessary for the WRSS include pumps in each tank, sluicers to direct the supernatant stream in C-106, a slurry distributor in AY-102, HVAC for C-106, instrumentation and control devices, and other existing components as required.

  19. CX-002205: Categorical Exclusion Determination

    Office of Energy Efficiency and Renewable Energy (EERE)

    686-G Steel Creek Dam (L-Lake) InspectionCX(s) Applied: B1.3Date: 04/16/2010Location(s): Aiken, South CarolinaOffice(s): Environmental Management, Savannah River Operations Office

  20. EA-1999: Proposal to Permit 750 Acres and New Training Operations...

    Energy Savers

    has requested permitting two tracts of land, one near B-Area and one west of L-Lake and north of South Carolina Route 125, to establish facilities for military training purposes....

  1. Survey of Field Programmable Gate Array Design Guides and Experience Relevant to Nuclear Power Plant Applications

    SciTech Connect (OSTI)

    Bobrek, Miljko; Bouldin, Don; Holcomb, David Eugene; Killough, Stephen M; Smith, Stephen Fulton; Ward, Christina D

    2007-09-01

    From a safety perspective, it is difficult to assess the correctness of FPGA devices without extensive documentation, tools, and review procedures. NUREG/CR-6463, "Review Guidelines on Software Languages for Use in Nuclear Power Plant Safety Systems," provides guidance to the Nuclear Regulatory Commission (NRC) on auditing of programs for safety systems written in ten high-level languages. A uniform framework for the formulation and discussion of language-specific programming guidelines was employed. Comparable guidelines based on a similar framework are needed for FPGA-based systems. The first task involves evaluation of regulatory experience gained by other countries and other agencies, and those captured in existing standards, to identify regulatory approaches that can be adopted by NRC. If existing regulations do not provide a sufficient regulatory basis for adopting relevant regulatory approaches that are uncovered, ORNL will identify the gaps. Information for this report was obtained through publicly available sources such as published papers and presentations. No proprietary information is represented.

  2. Low tipping at the gate: Solid waste management in St. Louis

    SciTech Connect (OSTI)

    Sager, K.A.

    1997-10-01

    With the largest solid waste management district in the state of Missouri, St. Louis offers low tipping fees and plenty of capacity for waste and recyclables at virtually no cost to the city`s nearly 400,000 residents. The city of St. Louis has its own refuse collection and is doing curbside pickup on a pilot basis for about 3,500 homes, says Lee Fox, president of the Missouri Recycling Association (St. Louis). Also for waste management, there is blue-bag drop-off and a series of drop-off sites at different fire stations throughout the city. The central-west side has once-a-week curbside service. There are 92 separate municipalities and 35% of the area is unincorporated. It really depends on where one lives and the service. St. Louis has twice-a-week trash service, with a once-a-week curbside and yard waste pickup. The city collects all residential trash, which is financed by the city`s general revenue fund, with no direct user fees to residents. Solid waste is shipped to an Illinois landfill owned by Allied Waste Industries, Inc. (Scottsdale, Ariz.). With no current citywide curbside recycling program, private recyclers provide collection to a small percentage of homes throughout the metropolitan area.

  3. Failure analysis for the dual input quad NAND gate CD4011 under dormant storage conditions.

    SciTech Connect (OSTI)

    Sorensen, Neil Robert

    2007-05-01

    Several groups of plastic molded CD4011s were electrically tested as part of an Army dormant storage program. These parts had been in storage in missile containers for 4.5 years, and were electrically tested annually. Eight of the parts (out of 1200) failed the electrical tests and were subsequently analyzed to determine the cause of the failures. The root cause was found to be corrosion of the unpassivated Al bondpads. No significant attack of the passivated Al traces was found. Seven of the eight failures occurred in parts stored on a pre-position ship (the Jeb Stuart), suggesting a link between the external environment and observed corrosion.

  4. UC Davis Fuel Cell, Hydrogen, and Hybrid Vehicle (FCH2V) GATE Center of Excellence

    Energy.gov [DOE]

    2009 DOE Hydrogen Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting, May 18-22, 2009 -- Washington D.C.

  5. Three dimensional time-gated tracking of non-blinking quantum...

    Office of Scientific and Technical Information (OSTI)

    Authors: DeVore, Matthew S. 1 ; Werner, James H. 1 ; Goodwin, Peter M. 1 ; Keller, Aaron M. 1 ; Hollingsworth, Jennifer A. 1 ; Wilson, Bridget S. 2 ; Cleyrat, Cedric ...

  6. Ultrafast gating of a mid-infrared laser pulse by a sub-pC relativisti...

    Office of Scientific and Technical Information (OSTI)

    OSTI Identifier: 22493066 Resource Type: Journal Article Resource Relation: Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 23; Other Information: (c) ...

  7. Day Two of 2012 ARPA-E Summit Will Feature Bill Gates, Secretary...

    Energy Savers

    ... Writer Lawrence Burns, University of Michigan, Professor of Engineering Practice; ... Head of U.S. Analysis Bob Hemphill, AES Solar Power Ltd., CEO Jacob Susman, OwnEnergy, ...

  8. Structural basis of GDP release and gating in G protein coupled Fe[superscript 2+] transport

    SciTech Connect (OSTI)

    Guilfoyle, Amy; Maher, Megan J.; Rapp, Mikaela; Clarke, Ronald; Harrop, Stephen; Jormakka, Mika

    2009-09-29

    G proteins are key molecular switches in the regulation of membrane protein function and signal transduction. The prokaryotic membrane protein FeoB is involved in G protein coupled Fe{sup 2+} transport, and is unique in that the G protein is directly tethered to the membrane domain. Here, we report the structure of the soluble domain of FeoB, including the G protein domain, and its assembly into an unexpected trimer. Comparisons between nucleotide free and liganded structures reveal the closed and open state of a central cytoplasmic pore, respectively. In addition, these data provide the first observation of a conformational switch in the nucleotide-binding G5 motif, defining the structural basis for GDP release. From these results, structural parallels are drawn to eukaryotic G protein coupled membrane processes.

  9. Self-powered Gating and Other Improvements for Screening-engineered...

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    ... Competing thin film technologies depend on hazardous materials such as cadmium, or increasingly rare materials, such as indium (for copper-indium-gallide-selenide PV cells). ...

  10. Gate tunable monolayer MoS{sub 2}/InP heterostructure solar cells...

    Office of Scientific and Technical Information (OSTI)

    Country of Publication: United States Language: English Subject: 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; EFFICIENCY; ELECTRIC POTENTIAL; FERMI LEVEL; HETEROJUNCTIONS; ...

  11. Fast Out of the Gate: How Developing Asian Countries can Prepare...

    Open Energy Information (Open El) [EERE & EIA]

    from the LEDS Global Partnership. When to Use This Tool While building a low emission strategy for your country's transportation system, this tool is most useful during these...

  12. Development of a new roof bolt technology to improve gate-road performance

    SciTech Connect (OSTI)

    Caggiano, V.; Rauch, G.; Beck, K.-D.; Chen, J.

    2005-10-01

    Hilti has developed, in conjunction with Foundation Coal, a self-drilling bolt that cuts roof bolting times. The system uses a wet, self-drilling, hollow bolt technology with a self-contained resin cartridge. The resin is dispensed using an injection adapter that provides the high pressure water needed to dispense the resin. The OneStep roof bolt contains an axially shifting mixer that ensures the resin is properly mixed as it exits the water ports near the end of the bolt near the drill head. This eliminates the opportunity for plastic materials to interface between the strata and the bolt. In 2004 the OneStep Bolt was successfully installed in DSK's Prosper Haniel Colliery in Germany, achieving a 42% reduction in single-boom roof bolt cycle time and a 36% reduction in twin-boom roof bolt cycle time. Foundation Coal will be installing 2000 6 ft active bolts in one of the North Appalachian longwall locations. 1 fig.

  13. SU-E-J-60: Evaluation of Temporal Lag in Radiotherapy Gating...

    Office of Scientific and Technical Information (OSTI)

    ... Language: English Subject: 60 APPLIED LIFE SCIENCES; ALGORITHMS; BEAMS; BIOMEDICAL RADIOGRAPHY; EVALUATION; LINEAR ACCELERATORS; NEOPLASMS; PHANTOMS; QUALITY ASSURANCE; ...

  14. Vehicle Technologies Office Merit Review 2016: Gate Driver Optimization for WBG Applications

    Energy.gov [DOE]

    Presentation given by Oak Ridge National Laboratory (ORNL) at the 2016 DOE Vehicle Technologies Office and Hydrogen and Fuel Cells Program Annual Merit Review and Peer Evaluation Meeting about...

  15. Holographic Spectroscopy for Rapid Electron Bunch Analysis: Development of an Instrument with THZ Resolved Optical Gating

    SciTech Connect (OSTI)

    Sievers, Albert

    2011-10-28

    The main thrust of our project was to apply the concepts of holographic spectroscopy, developed earlier in the visible and near IR spectral regions for satellite mapping, to the THz region in order to measure the spectral signature of the coherent radiation emanating from a relativistic electron bunch to obtain the bunch length itself. There were four major discoveries. (1) In the course of this ground-breaking work we developed and built the first static THz interferometer suitable for the realization of such a holographic Fourier transform spectrometer. Experimental tests and analysis of the observed results have provided the necessary foundation for future development of THz detector arrays optimized for spectroscopic applications. (2) Since such detectors do not exist at the present time our next effort was to find an alternative approach. We explored the electro-optic (EO) detection of the THz pulse using the short pulse of a visible diode laser synchronized to the bunch with the long-term goal aimed at single bunch measurement capability. The main hurdle was found to be the parasitic scattering of the diode radiation in the EO medium. By using the optical Fourier transform of the THz interference pattern the effects of this background were suppressed enough to obtain the spectrum using multiple shot acquisition. During our experiments at the FLASH facility at DESY we determined that for single bunch measurement capability the diode laser has to be able to produce sub 100 ps pulses with peak power of at least 1 W. Since these parameters are quite feasible at the current stage of diode laser science this combination of techniques can be used for single shot measurement of a short electron bunch. (3) In carrying out the above effort a simpler measurement possibility was uncovered involving the visible/nearIR pulse of incoherent radiation produced by the same bunch. This observation made possible the cross-correlation of the THz coherent and visible incoherent radiation and provided the first step in the development of a self contained THz HFTS for rapid electron bunch shape analysis. Our first experiments confirmed the idea and as a side result made possible a completely new bunch length monitor eliminating any need for an external laser since only radiation produced by the bunch itself is involved. A more advanced instrument was designed to use the incoherent visible radiation pulse from the synchrotron source for sampling the THz interference pattern. It has been built and the first tests are to be conducted in April 2011 at the Jefferson FEL facility.

  16. UC Davis Fuel Cell, Hydrogen, and Hybrid Vehicle (FCH2V) GATE...

    Energy.gov (indexed) [DOE]

    09 DOE Hydrogen Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting, May 18-22, 2009 -- Washington D.C. ti02erickson.pdf (788.94

  17. UC Davis Fuel Cell, Hydrogen, and Hybrid Vehicle (FCH2V) GATE...

    Energy.gov (indexed) [DOE]

    11 DOE Hydrogen and Fuel Cells Program, and Vehicle Technologies Program Annual Merit Review and Peer Evaluation ti007erickson2011o.pdf (383.09

  18. Radiation induced leakage current and stress induced leakage current in ultra-thin gate oxides

    SciTech Connect (OSTI)

    Ceschia, M.; Paccagnella, A.; Cester, A.; Scarpa, A.; Ghidini, G.

    1998-12-01

    Low-field leakage current has been measured in thin oxides after exposure to ionizing radiation. This Radiation Induced Leakage Current (RILC) can be described as an inelastic tunneling process mediated by neutral traps in the oxide, with an energy loss of about 1 eV. The neutral trap distribution is influenced by the oxide field applied during irradiation, thus indicating that the precursors of the neutral defects are charged, likely being defects associated to trapped holes. The maximum leakage current is found under zero-field condition during irradiation, and it rapidly decreases as the field is enhanced, due to a displacement of the defect distribution across the oxide towards the cathodic interface. The RILC kinetics are linear with the cumulative dose, in contrast with the power law found on electrically stressed devices.

  19. UC Davis Fuel Cell, Hydrogen, and Hybrid Vehicle (FCH2V) GATE Center of Excellence

    Energy.gov [DOE]

    2011 DOE Hydrogen and Fuel Cells Program, and Vehicle Technologies Program Annual Merit Review and Peer Evaluation

  20. Experimental investigation of a molecular gate membrane for separation of carbon dioxide from flue gas

    SciTech Connect (OSTI)

    Kazama, S.; Kai, T.; Kouketsu, T.; Matsui, S.; Yamada, K.; Hoffman, J.S.; Pennline, H.W.

    2006-09-01

    Commercial-sized modules of the PAMAM dendrimer composite membrane with high CO2/N2 selectivity and CO2 permeance were developed according to the In-situ Modification (IM) method. This method utilizes the interfacial precipitation of membrane materials on the surface of porous, commercially available polysulfone (PSF) ultrafiltration hollow fiber membrane substrates. A thin layer of amphiphilic chitosan, which has a potential affinity for both hydrophobic PSF substrates and hydrophilic PAMAM dendrimers, was employed as a gutter layer directly beneath the inner surface of the substrate by the IM method. PAMAM dendrimers were then impregnated into the chitosan gutter layer to form a hybrid active layer for CO2 separation. Permeation experiments of the PAMAM dendrimer composite membrane were carried out using a humidified mixed CO2 / N2 feed gas at a pressure difference up to 97 kPa at ambient temperature. When conducted with CO2 (5%) / N2 (95%) feed gas at a pressure difference of 97 kPa, the PAMAM composite membrane exhibited an excellent CO2/N2 selectivity of 150 and a CO2 permeance of 1.7×10-7 m3(STP) m-2 s-1 kPa-1. The impact of various process parameters on the permeability and selectivity was also examined.

  1. Microsoft Word - Class_1_PMN_New_Gate_East_Fence_Line_09_09_15...

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Kieling , Chief Hazardous Waste Bureau New Mexico Environment Department 2905 Rodeo Park Drive East, Building 1 Santa Fe, New Mexico 87505-6303 SEP 1 5 2015 Subject: Class 1 Permit...

  2. Range-gated field disturbance sensor with range-sensitivity compensation

    DOE Patents [OSTI]

    McEwan, T.E.

    1996-05-28

    A field disturbance sensor operates with relatively low power, provides an adjustable operating range, is not hypersensitive at close range, allows co-location of multiple sensors, and is inexpensive to manufacture. The sensor includes a transmitter that transmits a sequence of transmitted bursts of electromagnetic energy. The transmitter frequency is modulated at an intermediate frequency. The sequence of bursts has a burst repetition rate, and each burst has a burst width and comprises a number of cycles at a transmitter frequency. The sensor includes a receiver which receives electromagnetic energy at the transmitter frequency, and includes a mixer which mixes a transmitted burst with reflections of the same transmitted burst to produce an intermediate frequency signal. Circuitry, responsive to the intermediate frequency signal indicates disturbances in the sensor field. Because the mixer mixes the transmitted burst with reflections of the transmitted burst, the burst width defines the sensor range. The burst repetition rate is randomly or pseudorandomly modulated so that bursts in the sequence of bursts have a phase which varies. 8 figs.

  3. Range-gated field disturbance sensor with range-sensitivity compensation

    DOE Patents [OSTI]

    McEwan, Thomas E.

    1996-01-01

    A field disturbance sensor operates with relatively low power, provides an adjustable operating range, is not hypersensitive at close range, allows co-location of multiple sensors, and is inexpensive to manufacture. The sensor includes a transmitter that transmits a sequence of transmitted bursts of electromagnetic energy. The transmitter frequency is modulated at an intermediate frequency. The sequence of bursts has a burst repetition rate, and each burst has a burst width and comprises a number of cycles at a transmitter frequency. The sensor includes a receiver which receives electromagnetic energy at the transmitter frequency, and includes a mixer which mixes a transmitted burst with reflections of the same transmitted burst to produce an intermediate frequency signal. Circuitry, responsive to the intermediate frequency signal indicates disturbances in the sensor field. Because the mixer mixes the transmitted burst with reflections of the transmitted burst, the burst width defines the sensor range. The burst repetition rate is randomly or pseudorandomly modulated so that bursts in the sequence of bursts have a phase which varies.

  4. Radiation hardening of gated x-ray imagers for the National Ignition...

    Office of Scientific and Technical Information (OSTI)

    Resource Relation: Journal Name: Review of Scientific Instruments; Journal Volume: 81; Journal Issue: 10; Other Information: (c) 2010 American Institute of Physics; Country of ...

  5. Field Emission Cathode Gating for RF Electron Guns (IN-04-039...

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Contact ANL About This Technology

    Field emission (FE) gun          

    Field emission (FE) gun

  6. Final Technical Report- Back-gate Field Emission-based Cathode RF Electron Gun

    SciTech Connect (OSTI)

    McGuire, Gary; Martin, Allen; Noonan, John

    2010-10-30

    The objective was to complete the design of an electron gun which utilizes a radio frequency (RF) power source to apply a voltage to a field emission (FE) cathode, a so called cold cathode, in order to produce an electron beam. The concept of the RF electron gun was originally conceived at Argonne National Laboratory but never reduced to practice. The research allowed the completion of the design based upon the integration of the FE electron source. Compared to other electron guns, the RF gun is very compact, less than one third the size of other comparable guns, and produces a high energy (to several MeV), high quality, high power electron beam with a long focal length with high repetition rates. The resultant electron gun may be used in welding, materials processing, analytical equipment and waste treatment.

  7. GATE Center of Excellence at UAB in Lightweight Materials for Automotive Applications

    Office of Energy Efficiency and Renewable Energy (EERE)

    2011 DOE Hydrogen and Fuel Cells Program, and Vehicle Technologies Program Annual Merit Review and Peer Evaluation

  8. GATE Center of Excellence at UAB in Lightweight Materials for Automotive Applications

    Office of Energy Efficiency and Renewable Energy (EERE)

    2009 DOE Hydrogen Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting, May 18-22, 2009 -- Washington D.C.

  9. Mixer pump test plan for double-shell tank AZ-101. Revision 1

    SciTech Connect (OSTI)

    Symons, G.A.

    1996-02-01

    Westinghouse Hanford Company has undertaken the task to develop and demonstrate a method of retrieval for double-shell tank waste. Mixer pumps were chosen as the planned method of retrieval for DSTs, based on engineering technology studies, past experience with hydraulic sluicing at the Hanford Site, and experience with mixer pumps at the Westinghouse Savannah River Site.

  10. Tank 241-C-106 in-tank imaging system operational test report

    SciTech Connect (OSTI)

    Pedersen, L.T.

    1998-07-07

    This document presents the results of operational testing of the 241-C-106 In-Tank Video Camera Imaging System. This imaging system was installed as a component of Project W-320 to monitor sluicing and waste retrieval activities in Tank 241-C-106.

  11. Old hydrofracture facility tanks contents removal action operations plan at the Oak Ridge National Laboratory, Oak Ridge, Tennessee. Volume 1: Text. Volume 2: Checklists and work instructions

    SciTech Connect (OSTI)

    1998-05-01

    This Operations Plan summarizes the operating activities for transferring contents of five low-level (radioactive) liquid waste storage tanks associated with the Old Hydrofracture Facility (OHF) to the Melton Valley Storage Tanks (MVST) for secure storage. The transfer will be accomplished through sluicing and pumping operations which are designed to pump the slurry in a closed circuit system using a sluicing nozzle to resuspend the sludge. Once resuspended, the slurry will be transferred to the MVST. The report documenting the material transfer will be prepared after transfer of the tank materials has been completed. The OBF tanks contain approximately 52,600 gal (199,000 L) of low-level radioactive waste consisting of both sludge and supernatant. This material is residual from the now-abandoned grout injection operations conducted from 1964 to 1980. Total curie content is approximately 30,000 Ci. A sluicing and pumping system has been specifically designed for the OHF tanks contents transfer operations. This system is remotely operated and incorporates a sluicing nozzle and arm (Borehole Miner) originally designed for use in the mining industry. The Borehole Miner is an in-tank device designed to deliver a high pressure jet spray via an extendable nozzle. In addition to removing the waste from the tanks, the use of this equipment will demonstrate applicability for additional underground storage tank cleaning throughout the U.S. Department of Energy complex. Additional components of the complete sluicing and pumping system consist of a high pressure pumping system for transfer to the MVST, a low pressure pumping system for transfer to the recycle tank, a ventilation system for providing negative pressure on tanks, and instrumentation and control systems for remote operation and monitoring.

  12. Gate-controlled terahertz single electron photovoltaic effect in self-assembled InAs quantum dots

    SciTech Connect (OSTI)

    Zhang, Y. Nagai, N.; Shibata, K.; Hirakawa, K.; Ndebeka-Bandou, C.; Bastard, G.

    2015-09-07

    We have observed a terahertz (THz) induced single electron photovoltaic effect in self-assembled InAs quantum dots (QDs). We used a single electron transistor (SET) geometry that consists of a single InAs QD and nanogap electrodes coupled with a bowtie antenna. Under a weak, broadband THz radiation, a photocurrent induced by THz intersublevel transitions in the QD is generated even when no bias voltage is applied to the SET. The observed single electron photovoltaic effect is due to an energy-dependent tunneling asymmetry in the QD-SET. Moreover, the tunneling asymmetry changes not only with the shell but also with the electron number in the QD, suggesting the manybody nature of the electron wavefunctions. The THz photovoltaic effect observed in the present QD-SET system may have potential applications to nanoscale energy harvesting.

  13. University of Illinois at Urbana-Champaign's GATE Center for Advanced Automotive Bio-Fuel Combustion Engines

    Office of Energy Efficiency and Renewable Energy (EERE)

    2011 DOE Hydrogen and Fuel Cells Program, and Vehicle Technologies Program Annual Merit Review and Peer Evaluation

  14. Quantifying Cradle-to-Farm Gate Life Cycle Impacts Associated with Fertilizer used for Corn, Soybean, and Stover Production

    Office of Energy Efficiency and Renewable Energy (EERE)

    Fertilizer use can cause environmental problems, particularly eutrophication of water bodies from excess nitrogen or phosphorus. Increased fertilizer runoff is a concern for harvesting corn stover for ethanol production.

  15. Penn State DOE Graduate Automotive Technology Education (Gate) Program for In-Vehicle, High-Power Energy Storage Systems

    Energy.gov [DOE]

    2011 DOE Hydrogen and Fuel Cells Program, and Vehicle Technologies Program Annual Merit Review and Peer Evaluation

  16. GATE Center of Excellence at UAB for Lightweight Materials and Manufacturing for Automotive, Truck and Mass Transit

    Office of Energy Efficiency and Renewable Energy (EERE)

    2013 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting

  17. Ultrafast terahertz gating of the polarization and giant nonlinear optical response in BiFeO3 thin films

    DOE PAGES-Beta [OSTI]

    Chen, Frank; Goodfellow, John; Liu, Shi; Grinberg, Ilya; Hoffmann, Matthias; Damodaran, Anoop R.; Zhu, Yi; Zalden, Peter; Zhang, Xiaohang; Takeuchi, Ichiro; et al

    2015-09-21

    Terahertz pulses are applied as an all-optical bias to ferroelectric thin-film BiFeO3 while monitoring the time-dependent ferroelectric polarization through its nonlinear optical response. Modulations in the intensity of the second harmonic light generated by the film correspond to on–off ratios of 220× gateable on femtosecond timescales. Lastly, polarization modulations comparable to the built-in static polarization are observed.

  18. Impact of total ionizing dose irradiation on electrical property of ferroelectric-gate field-effect transistor

    SciTech Connect (OSTI)

    Yan, S. A.; Tang, M. H. Xiao, Y. G.; Zhang, W. L.; Ding, H.; Chen, J. W.; Zhou, Y. C.; Xiong, Y.; Li, Z.; Zhao, W.; Guo, H. X.

    2014-05-28

    P-type channel metal-ferroelectric-insulator-silicon field-effect transistors (FETs) with a 300?nm thick SrBi{sub 2}Ta{sub 2}O{sub 9} ferroelectric film and a 10?nm thick HfTaO layer on silicon substrate were fabricated and characterized. The prepared FeFETs were then subjected to {sup 60}Co gamma irradiation in steps of three dose levels. Irradiation-induced degradation on electrical characteristics of the fabricated FeFETs was observed after 1 week annealing at room temperature. The possible irradiation-induced degradation mechanisms were discussed and simulated. All the irradiation experiment results indicated that the stability and reliability of the fabricated FeFETs for nonvolatile memory applications will become uncontrollable under strong irradiation dose and/or long irradiation time.

  19. Ultrafast terahertz gating of the polarization and giant nonlinear optical response in BiFeO3 thin films

    DOE PAGES-Beta [OSTI]

    Chen, Frank; Goodfellow, John; Liu, Shi; Grinberg, Ilya; Hoffman, Matthias; Damodaran, Anoop R.; Zhu, Yi; Zhang, Xiaohang; Takeuchi, Ichiro; Rappe, Andrew; et al

    2015-09-21

    In this article, terahertz pulses are applied as an all-optical bias to ferroelectric thin-film BiFeO3 while monitoring the time-dependent ferroelectric polarization through its nonlinear optical response. Modulations in the intensity of the second harmonic light generated by the film correspond to on–off ratios of 220 × gateable on femtosecond timescales. Polarization modulations comparable to the built-in static polarization are observed.

  20. University of Illinois at Urbana-Champaigns GATE Center for Advanced Automotive Bio-Fuel Combustion Engines

    Energy.gov [DOE]

    2009 DOE Hydrogen Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting, May 18-22, 2009 -- Washington D.C.

  1. Albany Center map_rev36-10

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Bro adw ay Stre et Lib ert y Str ee t Queen Avenue N S1 S2 S3 Locked Gate Locked Gate Locked Gate Locked Gate Locked Gate Locked Gate Walk Gate (locked) Walk Gate (locked) Walk Gate (locked) 0 200 Scale in feet 1 40 33 31 30 29 28 Trailer 2 Trailer 1 27 26 25 23 24 22 20 21 19 18 36 35 37 38 39 34 17 14,15,16 13 7 8 9 10 11 6 12 5 4 2 32 VACANT FEDERAL PROPERTY S4 Gas Sheds Covered Dock Main Gate Security Guard Emergency Gate (Automatic) Locked Gate Locked Gate Walk Gate (locked) Scrap Metal

  2. Tanks Focus Area retrieval process development and enhancements FY96 technology development summary report

    SciTech Connect (OSTI)

    Rinker, M.W.; Bamberger, J.A.; Hatchell, B.K.

    1996-09-01

    The Retrieval Process Development and Enhancements (RPD&E) activities are part of the Retrieval and Closure Program of the U.S. Department of Energy (DOE) EM-50 Tanks Focus Area. The purposes of RPD&E are to understand retrieval processes, including emerging and existing technologies, and to gather data on those processes, so that end users have the requisite technical basis to make retrieval decisions. Work has been initiated to support the need for multiple retrieval technologies across the DOE complex. Technologies addressed during FY96 focused on enhancements to sluicing, borehole mining, confined sluicing retrieval end effectors, the lightweight scarifier, and pulsed air mixing. Furthermore, a decision tool and database have been initiated to link retrieval processes with tank closure to assist end users in making retrieval decisions.

  3. Engineering study of tank leaks related to hydraulic retrieval of sludge from tank 241-C-106. Revision 1

    SciTech Connect (OSTI)

    Lowe, S.S.; Carlos, W.C.; Irwin, J.J.; Khaleel, R.; Kline, N.W.; Ludowise, J.D.; Marusich, R.M.; Rittman, P.D.

    1993-06-09

    This study evaluates hydraulic retrieval (sluicing) of the waste in single-shell tank 241-C-106 with respect to the likelihood of tank leaks, gross volumes of potential leaks, and their consequences. A description of hydraulic retrieval is developed to establish a baseline for the study. Leak models are developed based on postulated leak mechanisms to estimate the amount of waste that could potentially leak while sluicing. Transport models describe the movement of the waste constituents in the surrounding soil and groundwater after a leak occurs. Environmental impact and risk associated with tank leaks are evaluated. Transport of leaked material to the groundwater is found to be dependent on the rate of recharge of moisture in the soil for moderate-sized leaks. Providing a cover over the tank and surrounding area would eliminate the recharge. The bulk of any leaked material would remain in the vicinity of the tank for remedial action.

  4. TWC Committee Meeting - Transcribed Flipchart Notes

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    September 11, 2013 System Plan Assumptions * Consider a non-TPA compliant scenario (?) * Need info from Sec → Info to public/community late Oct (guess, only) Next steps  * Wait for information, anticipate working on advice at Nov TWC meeting Page 1 TWC Committee Call Topics Sept 17 * 3 month work plan * October meeting topics table (Oct 9) Feedback on Tour * Tours at points of progress, if possible * Great * Sluicing great to see! * Regular tour, if possible Page 2

  5. KTM Experimental Complex Project Status

    SciTech Connect (OSTI)

    Tazhibayeva, I.L.; Azizov, E.A.; Krylov, V.A.; Shkolnik, V.S.; Velikhov, E.P.; Obysov, N.A.; Tukhvatulin, Sh.T.; Tikhomirov, L.N.; Shestakov, V.P.; Filatov, O.G

    2005-04-15

    A review of KTM experimental complex project status, which is aimed the creation of a Kazakhstani spherical tokamak for study and tests materials and components of future fusion reactors. Revised basic parameters of the KTM facility and ground of the changes taking into account new plasma core geometry, new design of vacuum chamber and modified magnetic system, transport sluice and movable divertor devices, and additional RF-heating system are presented here.

  6. Foldtrack in Motion | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    in Motion Foldtrack in Motion Addthis Description Resembling a small bulldozer, Foldtrack is a remotely operated, track-mounted system that uses a plow blade to move radioactive waste from the floor of Hanford's underground storage tanks. In addition to the front-facing blade, the unit is also armed with two onboard water jet systems, three high-pressure turbo nozzles, and a sluicing cannon for sweeping the tank floor. This video was taken during testing at Hanford's Cold Test Facility

  7. Acceptance test report for the Tank 241-C-106 in-tank imaging system

    SciTech Connect (OSTI)

    Pedersen, L.T.

    1998-05-22

    This document presents the results of Acceptance Testing of the 241-C-106 in-tank video camera imaging system. The purpose of this imaging system is to monitor the Project W-320 sluicing of Tank 241-C-106. The objective of acceptance testing of the 241-C-106 video camera system was to verify that all equipment and components function in accordance with procurement specification requirements and original equipment manufacturer`s (OEM) specifications. This document reports the results of the testing.

  8. EM-50 Tanks Focus Area retrieval process development and enhancements. FY97 technology development summary report

    SciTech Connect (OSTI)

    Rinker, M.W.; Bamberger, J.A.; Alberts, D.G.

    1997-09-01

    The Retrieval Process Development and Enhancements (RPD and E) activities are part of the US Department of Energy (DOE) EM-50 Tanks Focus Area, Retrieval and Closure program. The purpose of RPD and E is to understand retrieval processes, including emerging and existing technologies, and to gather data on these processes, so that end users have requisite technical bases to make retrieval decisions. Technologies addressed during FY97 include enhancements to sluicing, the use of pulsed air to assist mixing, mixer pumps, innovative mixing techniques, confined sluicing retrieval end effectors, borehole mining, light weight scarification, and testing of Russian-developed retrieval equipment. Furthermore, the Retrieval Analysis Tool was initiated to link retrieval processes with tank waste farms and tank geometric to assist end users by providing a consolidation of data and technical information that can be easily assessed. The main technical accomplishments are summarized under the following headings: Oak Ridge site-gunite and associated tanks treatability study; pulsed air mixing; Oak Ridge site-Old Hydrofracture Facility; hydraulic testbed relocation; cooling coil cleaning end effector; light weight scarifier; innovative tank mixing; advanced design mixer pump; enhanced sluicing; Russian retrieval equipment testing; retrieval data analysis and correlation; simulant development; and retrieval analysis tool (RAT).

  9. Multiple DC, single AC converter with a switched DC transformer

    DOE Patents [OSTI]

    Donnelly, M.K.; Hammerstrom, D.J.

    1997-05-20

    The invention is an improvement of the PASC inverter, wherein the improvements include the reduction from two shorting gates per transformer to one shorting gate per transformer and replacement of active control of the shorting gate with passive control of the shorting gate. Further advantages are obtained through the use of anti-parallel gate sets. 14 figs.

  10. Multiple DC, single AC converter with a switched DC transformer

    DOE Patents [OSTI]

    Donnelly, Matthew K.; Hammerstrom, Donald J.

    1997-01-01

    The invention is an improvement of the PASC inverter, wherein the improvements include the reduction from two shorting gates per transformer to one shorting gate per transformer and replacement of active control of the shorting gate with passive control of the shorting gate. Further advantages are obtained through the use of anti-parallel gate sets.

  11. HANFORD TANK CLEANUP UPDATE MAY 2009 [VISIT US AT WWW.WRPSTOC.COM OR WWW.HANFORD.GOV/ORP/ FOR MORE INFORMATION

    SciTech Connect (OSTI)

    HOLLOWAY JN

    2009-05-03

    Retrieval of waste from single-shell tank C-110 resumed in January making it the first waste retrieval operation for WRPS since taking over Hanford's Tank Operations Contract last October. Now, with approximately 90 percent of the waste removed, WRPS believes that modified sluicing has reached the limits of the technology to remove any further waste and is preparing documentation for use in decision making about any future retrieval actions. Tank C-110 is located in C Fann near the center of the Hanford Site. It is a 530,000 gallon tank, built in 1946, and held approximately 126,000 gallons of sludge and other radioactive and chemical waste materials when retrieval resumed. Modified sluicing technology uses liquid waste from a nearby double-shell tank to break up, dissolve and mobilize the solid material so it can be pumped. Because of the variety of waste fon11S, sluicing is often not able to remove all of the waste. The remaining waste will next be sampled for analysis, and results will be used to guide decisions regarding future actions. Work is moving rapidly in preparation to retrieve waste from a second single-shell tank this summer and transfer it to safer double-shell tank storage. Construction activities necessary to retrieve waste from Tank C-104, a 530,000 gallon tank built in 1943, are approximately 60 percent complete as WRPS maintains its focus on reducing the risk posed by Hanford's aging single-shell waste tanks. C-104 is one of Hanford's oldest radioactive and chemical waste storage tanks, containing approximately 263,000 gallons of wet sludge with a top layer that is dry and powdery. This will be the largest sludge volume retrieval ever attempted using modified sluicing technology. Modified sluicing uses high pressure water or liquid radioactive waste sprayed from nozzles above the waste. The liquid dissolves and/or mobilizes the waste so it can be pumped. In addition to other challenges, tank C-104 contains a significant amount of plutonium and

  12. C_Program FilesRightFaxRFaxGateINA001e2443-0f95-4c73-9ac5-402896144284.TIF

    Energy Savers

    0: Categorical Exclusion Determination CX-200000: Categorical Exclusion Determination Floridian Natural Gas Storage Company, LLC CX(s) Applied: B5.7 Date: 07/30/2015 Location(s): Florida Offices(s): Fossil Energy, Natural Gas Regulation American LNG Marketing LLC (American LNG), a Delaware limited liability company with its primary place of business in New York, New York, filed an application with the Office of Fossil Energy (FE) on December 31, 2014, seeking authorization to export domestically

  13. C_Program FilesRightFaxRFaxGateINA23326efa-6848-4e70-881e-87e980cbdc1a.TIF

    Energy Savers

  14. C_Program FilesRightFaxRFaxGateINAa402975d-cd59-4ccc-928d-ecde174f0e37.TIF

    Energy Savers

  15. SU-E-J-186: Using 4DCT-Based Motion Modeling to Predict Motion and Duty Cycle On Successive Days of Gated Radiotherapy

    SciTech Connect (OSTI)

    Myronakis, M; Cai, W; Dhou, S; Cifter, F; Lewis, J

    2015-06-15

    Purpose: To determine if 4DCT-based motion modeling and external surrogate motion measured during treatment simulation can enhance prediction of residual tumor motion and duty cycle during treatment delivery. Methods: This experiment was conducted using simultaneously recorded tumor and external surrogate motion acquired over multiple fractions of lung cancer radiotherapy. These breathing traces were combined with the XCAT phantom to simulate CT images. Data from the first day was used to estimate the residual tumor motion and duty cycle both directly from the 4DCT (the current clinical standard), and from external-surrogate based motion modeling. The accuracy of these estimated residual tumor motions and duty cycles are evaluated by comparing to the measured internal/external motions from other treatment days. Results: All calculations were done for 25% and 50% duty cycles. The results indicated that duty cycle derived from 4DCT information alone is not enough to accurately predict duty cycles during treatment. Residual tumor motion was determined from the recorded data and compared with the estimated residual tumor motion from 4DCT. Relative differences in residual tumor motion varied from −30% to 55%, suggesting that more information is required to properly predict residual tumor motion. Compared to estimations made from 4DCT, in three out of four patients examined, the 30 seconds of motion modeling data was able to predict the duty cycle with better accuracy than 4DCT. No improvement was observed in prediction of residual tumor motion for this dataset. Conclusion: Motion modeling during simulation has the potential to enhance 4DCT and provide more information about target motion, duty cycles, and delivered dose. Based on these four patients, 30 seconds of motion modeling data produced improve duty cycle estimations but showed no measurable improvement in residual tumor motion prediction. More patient data is needed to verify this Result. I would like to acknowledge funding from MRA, VARIAN Medical Systems, Inc.

  16. A novel femtosecond-gated, high-resolution, frequency-shifted shearing interferometry technique for probing pre-plasma expansion in ultra-intense laser experiments

    SciTech Connect (OSTI)

    Feister, S. Orban, C.; Nees, J. A.; Morrison, J. T.; Frische, K. D.; Chowdhury, E. A.; Roquemore, W. M.

    2014-11-15

    Ultra-intense laser-matter interaction experiments (>10{sup 18} W/cm{sup 2}) with dense targets are highly sensitive to the effect of laser “noise” (in the form of pre-pulses) preceding the main ultra-intense pulse. These system-dependent pre-pulses in the nanosecond and/or picosecond regimes are often intense enough to modify the target significantly by ionizing and forming a plasma layer in front of the target before the arrival of the main pulse. Time resolved interferometry offers a robust way to characterize the expanding plasma during this period. We have developed a novel pump-probe interferometry system for an ultra-intense laser experiment that uses two short-pulse amplifiers synchronized by one ultra-fast seed oscillator to achieve 40-fs time resolution over hundreds of nanoseconds, using a variable delay line and other techniques. The first of these amplifiers acts as the pump and delivers maximal energy to the interaction region. The second amplifier is frequency shifted and then frequency doubled to generate the femtosecond probe pulse. After passing through the laser-target interaction region, the probe pulse is split and recombined in a laterally sheared Michelson interferometer. Importantly, the frequency shift in the probe allows strong plasma self-emission at the second harmonic of the pump to be filtered out, allowing plasma expansion near the critical surface and elsewhere to be clearly visible in the interferograms. To aid in the reconstruction of phase dependent imagery from fringe shifts, three separate 120° phase-shifted (temporally sheared) interferograms are acquired for each probe delay. Three-phase reconstructions of the electron densities are then inferred by Abel inversion. This interferometric system delivers precise measurements of pre-plasma expansion that can identify the condition of the target at the moment that the ultra-intense pulse arrives. Such measurements are indispensable for correlating laser pre-pulse measurements with instantaneous plasma profiles and for enabling realistic Particle-in-Cell simulations of the ultra-intense laser-matter interaction.

  17. Optimizing Low Temperature Diesel Combustion (LTC-D) "FreedomCAR and Vehicle Technologies Program Solicitation for University Research and Graduate Automotice Technology Education (GATE) Centers of Excellence"

    SciTech Connect (OSTI)

    Rolf Reitz; P. Farrell; D. Foster; J. Ghandhi; C. Rutland; S. Sanders

    2009-07-31

    The engine industry is currently facing severe emissions mandates. Pollutant emissions from mobile sources are a major source of concern. For example, US EPA mandates require emissions of particulate and nitrogen oxides (NOx) from heavy-duty diesel engine exhaust to drop at least 90 percent between 1998 and 2010. Effective analysis of the combustion process is required to guide the selection of technologies for future development since exhaust after-treatment solutions are not currently available that can meet the required emission reduction goals. The goal of this project is to develop methods to optimize and control Low Temperature Combustion Diesel technologies (LTC-D) that offers the potential of nearly eliminating engine NOx and particulate emissions at reduced cost over traditional methods by controlling pollutant emissions in-cylinder. The work was divided into 5 Tasks, featuring experimental and modeling components: 1.) Fundamental understanding of LTC-D and advanced model development, 2.) Experimental investigation of LTC-D combustion control concepts, 3.) Application of detailed models for optimization of LTC-D combustion and emissions, 4.) Impact of heat transfer and spray impingement on LTC-D combustion, and 5.) Transient engine control with mixed-mode combustion. As described in the final report (December 2008), outcomes from the research included providing guidelines to the engine and energy industries for achieving optimal low temperature combustion operation through using advanced fuel injection strategies, and the potential to extend low temperature operation through manipulation of fuel characteristics. In addition, recommendations were made for improved combustion chamber geometries that are matched to injection sprays and that minimize wall fuel films. The role of fuel-air mixing, fuel characteristics, fuel spray/wall impingement and heat transfer on LTC-D engine control were revealed. Methods were proposed for transient engine operation during load and speed changes to extend LTC-D engine operating limits, power density and fuel economy. Low emissions engine design concepts were proposed and evaluated.

  18. Vehicle Technologies Office Merit Review 2014: Penn State DOE Graduate GATE Program for In-Vehicle, High-Power Energy Storage Systems

    Office of Energy Efficiency and Renewable Energy (EERE)

    Presentation given by Pennsylvania State University at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about Penn State DOE...

  19. Day Two of 2012 ARPA-E Summit Will Feature Bill Gates, Secretary Chu and America’s Top Energy Thought Leaders

    Energy.gov [DOE]

    The Advanced Research Projects Agency – Energy (ARPA-E) is hosting its third annual Energy Innovation Summit.

  20. The influence of carbon doping on the performance of Gd{sub 2}O{sub 3} as high-k gate dielectric

    SciTech Connect (OSTI)

    Shekhter, P.; Yehezkel, S.; Shriki, A.; Eizenberg, M.; Chaudhuri, A. R.; Osten, H. J.; Laha, A.

    2014-12-29

    One of the approaches for overcoming the issue of leakage current in modern metal-oxide-semiconductor devices is utilizing the high dielectric constants of lanthanide based oxides. We investigated the effect of carbon doping directly into Gd{sub 2}O{sub 3} layers on the performance of such devices. It was found that the amount of carbon introduced into the dielectric is above the solubility limit; carbon atoms enrich the oxide-semiconductor interface and cause a significant shift in the flat band voltage of the stack. Although the carbon atoms slightly degrade this interface, this method has a potential for tuning the flat band voltage of such structures.