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Sample records for island ga everett

  1. Price of Elba Island, GA Natural Gas LNG Imports from Equatorial...

    Energy Information Administration (EIA) (indexed site)

    Feet) Price of Elba Island, GA Natural Gas LNG Imports from Equatorial Guinea (Dollars per ... U.S. Price of Liquefied Natural Gas Imports by Point of Entry Elba Island, GA LNG Imports ...

  2. Price of Elba Island, GA Natural Gas LNG Imports from Nigeria...

    Annual Energy Outlook

    Nigeria (Nominal Dollars per Thousand Cubic Feet) Price of Elba Island, GA Natural Gas LNG ... U.S. Price of Liquefied Natural Gas Imports by Point of Entry Elba Island, GA LNG Imports ...

  3. Everett, Washington: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    District Smart Grid Project Utility Companies in Everett, Washington Snohomish County PUD No 1 References US Census Bureau Incorporated place and minor civil division...

  4. Price of Everett, MA Natural Gas LNG Imports from Australia ...

    Gasoline and Diesel Fuel Update

    Australia (Dollars per Thousand Cubic Feet) Price of Everett, MA Natural Gas LNG Imports ... U.S. Price of Liquefied Natural Gas Imports by Point of Entry Everett, MA LNG Imports from ...

  5. Mismatch relaxation by stacking fault formation of AlN islands in AlGaN/GaN structures on m-plane GaN substrates

    SciTech Connect

    Smalc-Koziorowska, Julita; Sawicka, Marta; Skierbiszewski, Czeslaw; Grzegory, Izabella

    2011-08-08

    We study the mismatch relaxation of 2-5 nm thin elongated AlN islands formed during growth of AlGaN on bulk m-plane GaN by molecular beam epitaxy. The relaxation of these m-plane AlN layers is anisotropic and occurs through the introduction of stacking faults in [0001] planes during island coalescence, while no relaxation is observed along the perpendicular [1120] direction. This anisotropy in the mismatch relaxation and the formation of stacking faults in the AlN islands are explained by the growth mode of the AlN platelets and their coalescence along the [0001] direction.

  6. Elba Island, GA Liquefied Natural Gas Total Imports (Million Cubic Feet)

    Energy Information Administration (EIA) (indexed site)

    Total Imports (Million Cubic Feet) Elba Island, GA Liquefied Natural Gas Total Imports (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2014 3,066 367 1,939 1,784 2015 2,847 3,010 3,004 2,925 2016 2,877 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 10/31/2016 Next Release Date: 11/30/2016 Referring Pages: U.S. Liquefied Natural Gas Imports by Point of Entry Elba Island, GA LNG

  7. Price of Everett, MA Natural Gas LNG Imports from Egypt (Nominal...

    Energy Information Administration (EIA) (indexed site)

    Egypt (Nominal Dollars per Thousand Cubic Feet) Price of Everett, MA Natural Gas LNG ... U.S. Price of Liquefied Natural Gas Imports by Point of Entry Everett, MA LNG Imports from ...

  8. Price of Everett, MA Natural Gas LNG Imports from Algeria (Dollars...

    Annual Energy Outlook

    Algeria (Dollars per Thousand Cubic Feet) Price of Everett, MA Natural Gas LNG Imports ... U.S. Price of Liquefied Natural Gas Imports by Point of Entry Everett, MA LNG Imports from ...

  9. Elba Island, GA Natural Gas Liquefied Natural Gas Imports from Egypt

    Energy Information Administration (EIA) (indexed site)

    (Million Cubic Feet) Egypt (Million Cubic Feet) Elba Island, GA Natural Gas Liquefied Natural Gas Imports from Egypt (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 5,780 5,800 5,885 2,889 2,915 2,956 2012 2,811 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 10/31/2016 Next Release Date: 11/30/2016 Referring Pages: U.S. Liquefied Natural Gas Imports by Point of Entry Elba

  10. Elba Island, GA Liquefied Natural Gas Imports from Qatar (Million Cubic

    Energy Information Administration (EIA) (indexed site)

    Feet) Liquefied Natural Gas Imports from Qatar (Million Cubic Feet) Elba Island, GA Liquefied Natural Gas Imports from Qatar (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 5,718 4,565 3,543 3,546 3,530 3,214 3,536 2012 3,521 3,522 3,515 5,601 3,012 3,017 3,017 5,603 3,015 2013 3,657 3,663 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 10/31/2016 Next Release Date:

  11. Elba Island, GA Natural Gas Liquefied Natural Gas Imports from Trinidad and

    Energy Information Administration (EIA) (indexed site)

    Tobago (Million Cubic Feet) Trinidad and Tobago (Million Cubic Feet) Elba Island, GA Natural Gas Liquefied Natural Gas Imports from Trinidad and Tobago (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 5,460 2,814 5,061 2,907 2,790 2,730 2012 2,854 2,881 2,790 2,862 2,834 2,849 5,562 2013 2,868 2,719 2,669 2014 3,066 367 1,939 1,784 2015 2,847 3,010 3,004 2,925 2016 2,877 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid

  12. Vertical electric field induced suppression of fine structure splitting of excited state excitons in a single GaAs/AlGaAs island quantum dots

    SciTech Connect

    Ghali, Mohsen; Ohno, Yuzo; Ohno, Hideo

    2015-09-21

    We report experimentally on fine structure splitting (FSS) of various excitonic transitions in single GaAs island quantum dots, formed by a monolayer thickness fluctuation in the narrow GaAs/AlGaAs quantum well, and embedded in an n-i-Schottky diode device. By applying a forward vertical electric field (F) between the top metallic contact and the sample substrate, we observed an in-plane polarization rotation of both the ground and the excited state excitons with increasing the electric field. The polarization rotations were accompanied with a strong decrease in the FSS of the ground as well as the excited state excitons with the field, until the FSS vanished as F approached 30 kV/cm.

  13. EVERETT L. REDMOND II Senior Director, Policy Development

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    EVERETT L. REDMOND II Senior Director, Policy Development 1201 F Street, NW, Suite 1100 Washington, DC 20004 P: 202.739.8122 elr@nei.org nei.org January 22, 2015 Mr. David Henderson U.S. Department of Energy Office of Nuclear Energy Mailstop NE-52 19901 Germantown Road Germantown, MD 20874-1290 Subject: Excess Uranium Management: Effects of DOE Transfers of Excess Uranium on Domestic Uranium Mining, Conversion, and Enrichment Industries; Request for Information, 79 FR 72,661 (December 8, 2014)

  14. Everett, MA Liquefied Natural Gas Total Imports (Million Cubic Feet)

    Energy Information Administration (EIA) (indexed site)

    Total Imports (Million Cubic Feet) Everett, MA Liquefied Natural Gas Total Imports (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2013 2,583 2,728 2014 5,470 3,783 2,334 2,806 2,175 3,311 1,567 2,871 2,505 2,003 2015 7,729 7,623 5,521 1,673 2,557 7,133 8,237 2,563 2,653 1,541 2,452 2016 10,633 8,593 5,626 4,693 5,087 7,520 5,703 7,998 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release

  15. ISLANDER

    Energy Science and Technology Software Center

    003251WKSTN00 Genomic Island Identification Software v 1.0 http://bioinformatics.sandia.gov/software

  16. Everett, MA Liquefied Natural Gas Imports From Yemen (Million Cubic Feet)

    Energy Information Administration (EIA) (indexed site)

    Imports From Yemen (Million Cubic Feet) Everett, MA Liquefied Natural Gas Imports From Yemen (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 2,688 5,591 5,465 2,843 5,608 2,865 5,622 5,537 5,424 2012 2,805 2,765 2,721 2,589 2,899 2,837 2013 2,728 2,763 2,806 2,728 2014 2,329 2,806 2,871 2015 2,234 2,373 2,834 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 10/31/2016 Next

  17. Everett, MA Natural Gas Liquefied Natural Gas Imports from Trinidad and

    Energy Information Administration (EIA) (indexed site)

    Tobago (Million Cubic Feet) Liquefied Natural Gas Imports from Trinidad and Tobago (Million Cubic Feet) Everett, MA Natural Gas Liquefied Natural Gas Imports from Trinidad and Tobago (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 10,240 11,488 7,086 8,271 8,126 8,150 7,731 7,870 5,199 5,520 9,264 4,691 2012 9,482 8,458 7,661 1,447 4,940 5,465 6,646 10,377 5,634 4,748 2,553 2,581 2013 5,126 5,003 4,629 5,171 5,626 5,173 8,023 5,961 2,995 2,674 2,583 2014 3,141

  18. Growth mechanisms of GaSb heteroepitaxial films on Si with an AlSb buffer layer

    SciTech Connect

    Vajargah, S. Hosseini; Botton, G. A.; Brockhouse Institute for Materials Research, McMaster University, Hamilton, Ontario L8S 4M1; Canadian Centre for Electron Microscopy, McMaster University, Hamilton, Ontario L8S 4M1 ; Ghanad-Tavakoli, S.; Preston, J. S.; Kleiman, R. N.; Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7; Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7

    2013-09-21

    The initial growth stages of GaSb epilayers on Si substrates and the role of the AlSb buffer layer were studied by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). Heteroepitaxy of GaSb and AlSb on Si both occur by Volmer-Weber (i.e., island mode) growth. However, the AlSb and GaSb islands have distinctly different characteristics as revealed through an atomic-resolution structural study using Z-contrast of HAADF-STEM imaging. While GaSb islands are sparse and three dimensional, AlSb islands are numerous and flattened. The introduction of 3D island-forming AlSb buffer layer facilitates the nucleation of GaSb islands. The AlSb islands-assisted nucleation of GaSb islands results in the formation of drastically higher quality planar film at a significantly smaller thickness of films. The interface of the AlSb and GaSb epilayers with the Si substrate was further investigated with energy dispersive X-ray spectrometry to elucidate the key role of the AlSb buffer layer in the growth of GaSb epilayers on Si substrates.

  19. The disintegration of GaSb/GaAs nanostructures upon capping

    SciTech Connect

    Martin, Andrew J.; Hwang, Jinyoung; Marquis, Emmanuelle A.; Smakman, Erwin; Saucer, Timothy W.; Rodriguez, Garrett V.; Hunter, Allen H.; Sih, Vanessa; Koenraad, Paul M.; Phillips, Jamie D.; Millunchick, Joanna

    2013-01-01

    Atom probe tomography and cross-sectional scanning tunneling microscopy show that GaSb/GaAs quantum dots disintegrate into ring-like clusters of islands upon capping. Band transition energies calculated using an 8-band k.p model of the capped dots with the observed dimensions are consistent with emission energies observed in photoluminescence data. These results emphasize the need for full three-dimensional characterization to develop an accurate understanding of the structure, and thus the optical properties, of buried quantum dots.

  20. Defect reduction in epitaxial GaSb grown on nanopatterned GaAs substrates using full wafer block copolymer lithography

    SciTech Connect

    Jha, Smita; Liu, C.-C.; Nealey, P. F.; Kuech, T. F.; Kuan, T. S.; Babcock, S. E.; Park, J. H.; Mawst, L. J.

    2009-08-10

    Defect reduction in the large lattice mismatched system of GaSb on GaAs, {approx}7%, was accomplished using full wafer block copolymer (BCP) lithography. A self-assembled BCP mask layer was used to generate a hexagonal pattern of {approx}20 nm holes on {approx}40 nm centers in a 20 nm SiO{sub 2} layer. GaSb growth initially takes place selectively within these holes leading to a dense array of small, strain-relaxed epitaxial GaSb islands. The GaSb grown on the patterned SiO{sub 2} layer exhibits a reduction in the x-ray linewidth attributed to a decrease in the threading dislocation density when compared to blanket pseudomorphic film growth.

  1. US Virgin Islands-Energy Development in Island Nations (EDIN...

    OpenEI (Open Energy Information) [EERE & EIA]

    US Virgin Islands-Energy Development in Island Nations (EDIN) Pilot Project Jump to: navigation, search Logo: US Virgin Islands-Energy Development in Island Nations (EDIN) Pilot...

  2. InGaAs/GaAs (110) quantum dot formation via step meandering

    SciTech Connect

    Diez-Merino, Laura; Tejedor, Paloma

    2011-07-01

    InGaAs (110) semiconductor quantum dots (QDs) offer very promising prospects as a material base for a new generation of high-speed spintronic devices, such as single electron transistors for quantum computing. However, the spontaneous formation of InGaAs QDs is prevented by two-dimensional (2D) layer-by-layer growth on singular GaAs (110) substrates. In this work we have studied, by using atomic force microscopy and photoluminescence spectroscopy (PL), the growth of InGaAs/GaAs QDs on GaAs (110) stepped substrates by molecular beam epitaxy (MBE), and the modification of the adatom incorporation kinetics to surface steps in the presence of chemisorbed atomic hydrogen. The as-grown QDs exhibit lateral dimensions below 100 nm and emission peaks in the 1.35-1.37 eV range. It has been found that a step meandering instability derived from the preferential attachment of In adatoms to [110]-step edges relative to [11n]-type steps plays a key role in the destabilization of 2D growth that leads to 3D mound formation on both conventional and H-terminated vicinal substrates. In the latter case, the driving force for 3D growth via step meandering is enhanced by H-induced upward mass transport in addition to the lower energy cost associated with island formation on H-terminated substrates, which results in a high density array of InGaAs/GaAs dots selectively nucleated on the terrace apices with reduced lateral dimensions and improved PL efficiency relative to those of conventional MBE-grown samples.

  3. Analysis of sediments and soils for chemical contamination for the design of US Navy homeport facility at East Waterway of Everett Harbor, Washington. Final report. [Macoma inquinata; Mytilus edulis

    SciTech Connect

    Anderson, J.W.; Crecelius, E.A.

    1985-03-01

    Contaminated sediments in the East Waterway of Everett Harbor, Washington, are extremely localized; they consist of a layer of organically-rich, fine sediments overlying a relatively cleaner, more sandy native material. The contaminated layer varies in thickness throughout the waterway from as much as 2 meters to only a few centimeters. Generally, the layer is thicker and more contaminated at the head of the waterway (northern end) and becomes thinner and less contaminated as one proceeds southerly out of the waterway and into Port Gardner. These sediments contain elevated levels of heavy metals and polynuclear aromatic hydrocarbons (PAH) and scattered concentrations of polychlorinated biphenyls (PCB). Approximately 500,000 cubic yards of material exhibit elevated chemical contamination compared to Puget Sound background levels. The contaminated sediments in this waterway require biological testing before decisions can be made regarding the acceptability of unconfined disposal.

  4. San Clemente Island, Channel Islands National Park, California | Department

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    of Energy Clemente Island, Channel Islands National Park, California San Clemente Island, Channel Islands National Park, California Photo of Wind Turbine on San Clemente Island, California San Clemente Island is one of the Channel Islands off the southern coast of California. The U.S. Navy owns the 21-mile long island, making it one of the Navy's largest real estate assets. The Navy uses the island for research, development, testing, evaluation, and training. Originally, the electrical needs

  5. San Miguel Island, Channel Islands National Park, California | Department

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    of Energy Miguel Island, Channel Islands National Park, California San Miguel Island, Channel Islands National Park, California Photo of Wind/Photovoltaic Power System at San Miguel Island San Miguel Island is one of five islands that make up Channel Islands National Park on the coast of southern California. The islands comprise 249,353 acres (100,910 hectares) of land and ocean that teems with terrestrial and marine life. The National Park Service (NPS) protects the pristine resources at

  6. Monhegan Island | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Island Jump to: navigation, search Name Monhegan Island Facility Monhegan Island Sector Wind energy Facility Type Offshore Wind Facility Status Proposed Owner Maine State Dept of...

  7. Washington County, Rhode Island: Energy Resources | Open Energy...

    OpenEI (Open Energy Information) [EERE & EIA]

    Rhode Island Bradford, Rhode Island Charlestown, Rhode Island Exeter, Rhode Island Hope Valley, Rhode Island Hopkinton, Rhode Island Kingston, Rhode Island Narragansett Pier,...

  8. Degradation mechanisms of Ti/Al/Ni/Au-based Ohmic contacts on AlGaN/GaN HEMTs

    SciTech Connect

    Hwang, Ya-Hsi; Ahn, Shihyun; Dong, Chen; Zhu, Weidi; Kim, Byung-Jae; Le, Lingcong; Ren, Fan; Lind, Aaron G.; Dahl, James; Jones, Kevin S.; Pearton, Stephen J.; Kravchenko, Ivan I.; Zhang, Ming-Lan

    2015-04-27

    We investigated the degradation mechanism of Ti/Al/Ni/Au-based Ohmic metallization on AlGaN/GaN high electron mobility transistors upon exposure to buffer oxide etchant (BOE). The major effect of BOE on the Ohmic metal was an increase of sheet resistance from 2.89 to 3.69 Ω/ₜafter 3 min BOE treatment. The alloyed Ohmic metallization consisted 3–5 μm Ni-Al alloy islands surrounded by Au-Al alloy-rings. The morphology of both the islands and ring areas became flatter after BOE etching. Lastly, we used energy dispersive x-ray analysis and Auger electron microscopy to analyze the compositions and metal distributions in the metal alloys prior to and after BOE exposure.

  9. Degradation mechanisms of Ti/Al/Ni/Au-based Ohmic contacts on AlGaN/GaN HEMTs

    DOE PAGES [OSTI]

    Hwang, Ya-Hsi; Ahn, Shihyun; Dong, Chen; Zhu, Weidi; Kim, Byung-Jae; Le, Lingcong; Ren, Fan; Lind, Aaron G.; Dahl, James; Jones, Kevin S.; et al

    2015-04-27

    We investigated the degradation mechanism of Ti/Al/Ni/Au-based Ohmic metallization on AlGaN/GaN high electron mobility transistors upon exposure to buffer oxide etchant (BOE). The major effect of BOE on the Ohmic metal was an increase of sheet resistance from 2.89 to 3.69 Ω/ₜafter 3 min BOE treatment. The alloyed Ohmic metallization consisted 3–5 μm Ni-Al alloy islands surrounded by Au-Al alloy-rings. The morphology of both the islands and ring areas became flatter after BOE etching. Lastly, we used energy dispersive x-ray analysis and Auger electron microscopy to analyze the compositions and metal distributions in the metal alloys prior to and aftermore » BOE exposure.« less

  10. Island Energy Conference

    Energy.gov [DOE]

    The sixth annual Island Energy Conference will include speakers and panels on Friday, November 6, and a site visit to Star Island, New Hampshire, that hosts Northern New England’s largest offshore...

  11. Island Energy Snapshots

    Energy.gov [DOE]

    These energy snapshots highlight the energy landscape of islands in the Caribbean, the Pacific, and the surrounding area.

  12. Arctic ice islands

    SciTech Connect

    Sackinger, W.M.; Jeffries, M.O.; Lu, M.C.; Li, F.C.

    1988-01-01

    The development of offshore oil and gas resources in the Arctic waters of Alaska requires offshore structures which successfully resist the lateral forces due to moving, drifting ice. Ice islands are floating, a tabular icebergs, up to 60 meters thick, of solid ice throughout their thickness. The ice islands are thus regarded as the strongest ice features in the Arctic; fixed offshore structures which can directly withstand the impact of ice islands are possible but in some locations may be so expensive as to make oilfield development uneconomic. The resolution of the ice island problem requires two research steps: (1) calculation of the probability of interaction between an ice island and an offshore structure in a given region; and (2) if the probability if sufficiently large, then the study of possible interactions between ice island and structure, to discover mitigative measures to deal with the moving ice island. The ice island research conducted during the 1983-1988 interval, which is summarized in this report, was concerned with the first step. Monte Carlo simulations of ice island generation and movement suggest that ice island lifetimes range from 0 to 70 years, and that 85% of the lifetimes are less then 35 years. The simulation shows a mean value of 18 ice islands present at any time in the Arctic Ocean, with a 90% probability of less than 30 ice islands. At this time, approximately 34 ice islands are known, from observations, to exist in the Arctic Ocean, not including the 10-meter thick class of ice islands. Return interval plots from the simulation show that coastal zones of the Beaufort and Chukchi Seas, already leased for oil development, have ice island recurrences of 10 to 100 years. This implies that the ice island hazard must be considered thoroughly, and appropriate safety measures adopted, when offshore oil production plans are formulated for the Alaskan Arctic offshore. 132 refs., 161 figs., 17 tabs.

  13. Bainbridge Island Data Dashboard

    Energy.gov [DOE]

    The data dashboard for Bainbridge Island, a partner in the U.S. Department of Energy's Better Buildings Neighborhood Program.

  14. General Atomics (GA) | Princeton Plasma Physics Lab

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    General Atomics (GA) Subscribe to RSS - General Atomics (GA) General Atomics Image: General Atomics (GA) The Scorpion's Strategy: "Catch and Subdue" Read more about The Scorpion's...

  15. Price of Elba Island, GA Liquefied Natural Gas Total Imports...

    Annual Energy Outlook

    Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2014 4.36 4.82 4.58 3.91 2015 3.08 2.74 2.76 2.76...

  16. Origins of interlayer formation and misfit dislocation displacement in the vicinity of InAs/GaAs quantum dots

    SciTech Connect

    Huang, S.; Kim, S. J.; Pan, X. Q.; Goldman, R. S.

    2014-07-21

    We have examined the origins of interlayer formation and misfit dislocation (MD) displacement in the vicinity of InAs/GaAs quantum dots (QDs). For QDs formed by the Stranski-Krastanov mode, regularly spaced MDs nucleate at the interface between the QD and the GaAs buffer layer. In the droplet epitaxy case, both In island formation and In-induced “nano-drilling” of the GaAs buffer layer are observed during In deposition. Upon annealing under As flux, the In islands are converted to InAs QDs, with an InGaAs interlayer at the QD/buffer interface. Meanwhile, MDs nucleate at the QD/interlayer interface.

  17. Island Boundaries, Hawaii

    SciTech Connect

    Nicole Lautze

    2015-01-01

    Outline of Hawaiian islands (Kauai, Oahu, Molokai, Kahoolawe, Lanai, Maui, Hawaii) generated from the Geologic Map of the State of Hawaii published by the USGS in 2007.

  18. Basaltic island sand provenance

    SciTech Connect

    Marsaglia, K.M. . Dept. of Geological Sciences)

    1992-01-01

    The Hawaiian Islands are an ideal location to study basaltic sand provenance in that they are a series of progressively older basaltic shield volcanoes with arid to humid microclimates. Sixty-two sand samples were collected from beaches on the islands of Hawaii, Maui, Oahu and Kauai and petrographically analyzed. The major sand components are calcareous bioclasts, volcanic lithic fragments, and monomineralic grains of dense minerals and plagioclase. Proportions of these components vary from island to island, with bioclastic end members being more prevalent on older islands exhibiting well-developed fringing reef systems and volcanic end members more prevalent on younger, volcanically active islands. Climatic variations across the island of Hawaii are reflected in the percentage of weathered detritus, which is greater on the wetter, northern side of the island. The groundmass of glassy, basaltic lithics is predominantly black tachylite, with lesser brown sideromelane; microlitic and lathwork textures are more common than holohyaline vitric textures. Other common basaltic volcanic lithic fragments are holocrystalline aggregates of silt-sized pyroxene or olivine, opaque minerals and plagioclase. Sands derived from alkalic lavas are texturally and compositionally indistinguishable from sands derived from tholeiitic lavas. Although Hawaiian basaltic sands overlap in composition with magmatic arc-derived sands in terms of their relative QFL, QmPK and LmLvLs percentages, they are dissimilar in that they lack felsic components and are more enriched in lathwork volcanic lithic fragments, holocrystalline volcanic lithic fragments, and dense minerals.

  19. Investigation of the GaN-on-GaAs interface for vertical power device applications

    SciTech Connect

    Mreke, Janina Uren, Michael J.; Kuball, Martin; Novikov, Sergei V.; Foxon, C. Thomas; Hosseini Vajargah, Shahrzad; Wallis, David J.; Humphreys, Colin J.; Haigh, Sarah J.; Al-Khalidi, Abdullah; Wasige, Edward; Thayne, Iain

    2014-07-07

    GaN layers were grown onto (111) GaAs by molecular beam epitaxy. Minimal band offset between the conduction bands for GaN and GaAs materials has been suggested in the literature raising the possibility of using GaN-on-GaAs for vertical power device applications. I-V and C-V measurements of the GaN/GaAs heterostructures however yielded a rectifying junction, even when both sides of the junction were heavily doped with an n-type dopant. Transmission electron microscopy analysis further confirmed the challenge in creating a GaN/GaAs Ohmic interface by showing a large density of dislocations in the GaN layer and suggesting roughening of the GaN/GaAs interface due to etching of the GaAs by the nitrogen plasma, diffusion of nitrogen or melting of Ga into the GaAs substrate.

  20. GA SNC Solar | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    GA-SNC Solar Place: Nevada Sector: Solar Product: Nevada-based PV project developer and joint venture of GA-Solar North America and Sierra Nevada Corp. References: GA-SNC...

  1. AMCHITICA ISLAND, ALASKA

    Office of Legacy Management (LM)

    Environment o f AMCHITICA ISLAND, ALASKA hlelvin L. hlerritt Sandia Laboratories Albuquerque, New Mexico Editors R. Glen Fuller Battelle Colu~nbus Laboratories Columbus, Ohio Prepared for Division of Military Application Energy Research and Development Administration Published by Technical Infor~nation Center Energy Research and Development Administration Library of Congress Cataloging in Pt~blication Data hlain entry under title: The Environment of Amchitka Island, Alaska "TlD-26712."

  2. United States Virgin Islands: Energy Resources | Open Energy...

    OpenEI (Open Energy Information) [EERE & EIA]

    Rebate Program (Virgin Islands) U.S. Virgin Islands - Energy Efficiency Residential Rebates (Virgin Islands) U.S. Virgin Islands - Net Metering (Virgin Islands) U.S. Virgin...

  3. Growth modes of InN(000-1) on GaN buffer layers on sapphire

    SciTech Connect

    Liu, Bing; Kitajima, Takeshi; Chen, Dongxue; Leone, Stephen R.

    2005-01-24

    In this work, using atomic force microscopy and scanning tunneling microscopy, we study the surface morphologies of epitaxial InN films grown by plasma-assisted molecular beam epitaxy with intervening GaN buffer layers on sapphire substrates. On smooth GaN buffer layers, nucleation and evolution of three-dimensional InN islands at various coverages and growth temperatures are investigated. The shapes of the InN islands are observed to be predominantly mesa-like with large flat (000-1) tops, which suggests a possible role of indium as a surfactant. Rough GaN buffer layers composed of dense small GaN islands are found to significantly improve uniform InN wetting of the substrates, on which atomically smooth InN films are obtained that show the characteristics of step-flow growth. Scanning tunneling microscopy imaging reveals the defect-mediated surface morphology of smooth InN films, including surface terminations of screw dislocations and a high density of shallow surface pits with depths less than 0.3 nm. The mechanisms of the three-dimensional island size and shape evolution and formation of defects on smooth surfaces are considered.

  4. Distributed Wind Case Study: Cross Island Farms, Wellesley Island...

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Distributed Wind Case Study: Cross Island Farms, Wellesley Island, New York www.nrel.gov Baker and Belding installed a 10-kW Bergey Excel wind turbine in August 2011. Photo from ...

  5. PSEG Long Island- Renewable Electricity Goal

    Energy.gov [DOE]

    NOTE: As of January 1, 2014, Long Island is served by PSEG Long Island, replacing Long Island Power Authority (LIPA). Long Island Renewable Energy goal ended in 2013, and currently does not have...

  6. GaInNAs laser gain

    SciTech Connect

    CHOW,WENG W.; JONES,ERIC D.; MODINE,NORMAND A.; KURTZ,STEVEN R.; ALLERMAN,ANDREW A.

    2000-05-23

    The optical gain spectra for GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of the lasing threshold current density of GaInNAs/GaAs quantum well structures.

  7. Long Island Solar Farm

    SciTech Connect

    Anders, R.

    2013-05-01

    The Long Island Solar Farm (LISF) is a remarkable success story, whereby very different interest groups found a way to capitalize on unusual circumstances to develop a mutually beneficial source of renewable energy. The uniqueness of the circumstances that were necessary to develop the Long Island Solar Farm make it very difficult to replicate. The project is, however, an unparalleled resource for solar energy research, which will greatly inform large-scale PV solar development in the East. Lastly, the LISF is a superb model for the process by which the project developed and the innovation and leadership shown by the different players.

  8. The Long Island Solar Farm

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Long Island Solar Farm May 2013 The Long Island Solar Farm Technical Report DOEGO-102013-3914 * May 2013 by Robert S. Anders, M.A. Presidential Management Fellow Brookhaven ...

  9. GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study

    SciTech Connect

    Wheeldon, Jeffrey F.; Valdivia, Christopher E.; Walker, Alex; Kolhatkar, Gitanja; Hall, Trevor J.; Hinzer, Karin; Masson, Denis; Riel, Bruno; Fafard, Simon; Jaouad, Abdelatif; Turala, Artur; Ares, Richard; Aimez, Vincent

    2010-10-14

    The following four TJ designs, AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs are studied to determine minimum doping concentration to achieve a resistance of <10{sup -4} {omega}{center_dot}cm{sup 2} and a peak tunneling current suitable for MJ solar cells up to 1500-suns concentration (operating current of 21 A/cm{sup 2}). Experimentally calibrated numerical models are used to determine how the resistance changes as a function of doping concentration. The AlGaAs/GaAs TJ design is determined to require the least doping concentration to achieve the specified resistance and peak tunneling current, followed by the GaAs/GaAs, and AlGaAs/AlGaAs TJ designs. The AlGaAs/InGaP TJ design can only achieve resistances >5x10{sup -4} {omega}cm{sup 2}.

  10. Suppression of metastable-phase inclusion in N-polar (0001{sup }) InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy

    SciTech Connect

    Shojiki, Kanako Iwabuchi, Takuya; Kuboya, Shigeyuki; Choi, Jung-Hun; Tanikawa, Tomoyuki; Hanada, Takashi; Katayama, Ryuji; Matsuoka, Takashi; Usami, Noritaka

    2015-06-01

    The metastable zincblende (ZB) phase in N-polar (0001{sup }) (?c-plane) InGaN/GaN multiple quantum wells (MQWs) grown by metalorganic vapor phase epitaxy is elucidated by the electron backscatter diffraction measurements. From the comparison between the ?c-plane and Ga-polar (0001) (+c-plane), the ?c-plane MQWs were found to be suffered from the severe ZB-phase inclusion, while ZB-inclusion is negligible in the +c-plane MQWs grown under the same growth conditions. The ZB-phase inclusion is a hurdle for fabricating the ?c-plane light-emitting diodes because the islands with a triangular shape appeared on a surface in the ZB-phase domains. To improve the purity of stable wurtzite (WZ)-phase, the optimum conditions were investigated. The ZB-phase is dramatically eliminated with decreasing the V/III ratio and increasing the growth temperature. To obtain much-higher-quality MQWs, the thinner InGaN wells and the hydrogen introduction during GaN barriers growth were tried. Consequently, MQWs with almost pure WZ phase and with atomically smooth surface have been demonstrated.

  11. General Atomics (GA) Fusion News: A New Spin on Understanding...

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    General Atomics (GA) Fusion News: A New Spin on Understanding Plasma Confinement American Fusion News Category: General Atomics (GA) Link: General Atomics (GA) Fusion News: A New ...

  12. Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)

    SciTech Connect

    Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel; Que, Christopher T.; Yamamoto, Kohji; Tani, Masahiko

    2012-12-15

    Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

  13. New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems

    SciTech Connect

    Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

    2005-11-01

    GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

  14. AMF Deployment, Graciosa Island, Azores

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Graciosa Island Home Data Plots and Baseline Instruments Satellite Retrievals Experiment Planning CAP-MBL Proposal Abstract and Related Campaigns Science Questions Science Plan...

  15. Temperature coefficients for GaInP/GaAs/GaInNAsSb solar cells

    SciTech Connect

    Aho, Arto; Isoaho, Riku; Tukiainen, Antti; Polojärvi, Ville; Aho, Timo; Raappana, Marianna; Guina, Mircea

    2015-09-28

    We report the temperature coefficients for MBE-grown GaInP/GaAs/GaInNAsSb multijunction solar cells and the corresponding single junction sub-cells. Temperature-dependent current-voltage measurements were carried out using a solar simulator equipped with a 1000 W Xenon lamp and a three-band AM1.5D simulator. The triple-junction cell exhibited an efficiency of 31% at AM1.5G illumination and an efficiency of 37–39% at 70x real sun concentration. The external quantum efficiency was also measured at different temperatures. The temperature coefficients up to 80°C, for the open circuit voltage, the short circuit current density, and the conversion efficiency were determined to be −7.5 mV/°C, 0.040 mA/cm{sup 2}/°C, and −0.09%/°C, respectively.

  16. Seeding of InP islands on InAs quantum dot templates

    SciTech Connect

    Medeiros-Ribeiro, G.; Maltez, R. L.; Bernussi, A. A.; Ugarte, D.; de Carvalho, W.

    2001-06-01

    The ability of stacking layers of islands and their corresponding alignment have prompted a number of studies. The main focus so far has been on stacking self-assembled quantum dot (QD) layers of the same material and composition. Our goal is to create systems of coupled QDs of different electronic properties, aiming at hybridization of their different electronic levels. In this work, we investigate the early stages of the coupling of alternate InAs{endash}InP QD layers through a GaAs spacer layer. We have found that by using an InAs layer containing QDs as seeds, we can control the size, shape and density of InP islands by varying the spacer thickness. We have observed a significant improvement of the InP island size uniformity, as well as an induced size reduction, thus providing an extra degree of tunability previously available only through growth kinetics. {copyright} 2001 American Institute of Physics.

  17. The impact of monolayer coverage, barrier thickness and growth rate on the thermal stability of photoluminescence of coupled InAs/GaAs quantum dot hetero-structure with quaternary capping of InAlGaAs

    SciTech Connect

    Mandal, A.; Verma, U.; Halder, N.; Chakrabarti, S.

    2012-03-15

    Highlight: Black-Right-Pointing-Pointer Coupled InAs/GaAs MQDs with (In{sub 0.21}Al{sub 0.21}Ga{sub 0.58}As + GaAs) caps are considered. Black-Right-Pointing-Pointer Monolayer coverage, barrier thickness and growth rate of the dots are the factors. Black-Right-Pointing-Pointer PL peaks for the samples are within 1.1-1.3 {mu}m; significant for IBSCs and lasers. Black-Right-Pointing-Pointer NPTP (non-resonant multi-phonon assisted tunneling process) effect on FWHM of PL. -- Abstract: The self-assembled InAs/GaAs MQDs are widely investigated for their potential application in optoelectronic devices like lasers and photovoltaics. We have explored the effect of QD growth rate and structural parameters like capping layer thickness on the morphology and optical properties of the MQD heterostructures overgrown with a combination capping of InAlGaAs and GaAs. The growth rate of the seed layers in the MQD samples is also varied to investigate its effect in the vertical stacking of the islands. The change in the morphology and the optical properties of the samples due to variation in growth and structural parameters are explained by the presence of strain in the QD structures, which arises due to lattice mismatch.

  18. Enjebi Island dose assessment

    SciTech Connect

    Robison, W.L.; Conrado, C.L.; Phillips, W.A.

    1987-07-01

    We have updeated the radiological dose assessment for Enjebi Island at Enewetak Atoll using data derived from analysis of food crops grown on Enjebi. This is a much more precise assessment of potential doses to people resettling Enjebi Island than the 1980 assessment in which there were no data available from food crops on Enjebi. Details of the methods and data used to evaluate each exposure pathway are presented. The terrestrial food chain is the most significant potential exposure pathway and /sup 137/Cs is the radionuclide responsible for most of the estimated dose over the next 50 y. The doses are calculated assuming a resettlement date of 1990. The average wholebody maximum annual estimated dose equivalent derived using our diet model is 166 mremy;the effective dose equivalent is 169 mremy. The estimated 30-, 50-, and 70-y integral whole-body dose equivalents are 3.5 rem, 5.1 rem, and 6.2 rem, respectively. Bone-marrow dose equivalents are only slightly higher than the whole-body estimates in each case. The bone-surface cells (endosteal cells) receive the highest dose, but they are a less sensitive cell population and are less sensitive to fatal cancer induction than whole body and bone marrow. The effective dose equivalents for 30, 50, and 70 y are 3.6 rem, 5.3 rem, and 6.6 rem, respectively. 79 refs., 17 figs., 24 tabs

  19. MWRA Deer Island Wind | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    navigation, search Name MWRA Deer Island Wind Facility MWRA Deer Island Wind Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner MWRA Deer...

  20. Island Energy Snapshots | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    islands around the globe, the featured islands are heavily reliant on fossil fuels for electricity generation, leaving them vulnerable to global oil price fluctuations that...

  1. Fox Islands Wind Project | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Fox Islands Electric Cooperative Location Vinalhaven Island ME Coordinates 44.088391, -68.857802 Show Map Loading map... "minzoom":false,"mappingservice":"googlemaps3","type":...

  2. University of Rhode Island | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Testing Facilities Name University of Rhode Island Address Department of Ocean Engineering, Sheets Building, Bay Campus Place Narragansett, Rhode Island Zip 02882 Sector...

  3. Aleutian Pribilof Islands Association - Wind Energy Development

    Energy Saver

    In the Aleutian Pribilof Islands Tribal Energy Program Review November 18, 2008 By Bruce Wright Connie Fredenberg Aleutian Pribilof Islands Association "The Birthplace of the Wind" ...

  4. Hainan Green Islands Power | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Green Islands Power Jump to: navigation, search Name: Hainan Green Islands Power Place: Hainan Province, China Sector: Solar Product: China-based JV developing on-grid solar...

  5. Island Energy Solutions | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    search Name: Island Energy Solutions Place: Kailua, Hawaii Zip: 96734 Product: Island Energy Solutions, Inc. is an electrical contracting company, based out of Kailua, Oahu,...

  6. Grey Island Energy Inc | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Grey Island Energy Inc Jump to: navigation, search Name: Grey Island Energy Inc Address: Suite 3003 Inco Innovation Centre Memorial University of Newfoundland PO Box 4200 Place: St...

  7. InGaAsN/GaAs heterojunction for multi-junction solar cells

    DOEpatents

    Kurtz, Steven R.; Allerman, Andrew A.; Klem, John F.; Jones, Eric D.

    2001-01-01

    An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

  8. Magnetism and transport properties of epitaxial Fe-Ga thin films on GaAs(001)

    SciTech Connect

    Duong Anh Tuan; Shin, Yooleemi; Cho, Sunglae; Dang Duc Dung; Vo Thanh Son

    2012-04-01

    Epitaxial Fe-Ga thin films in disordered bcc {alpha}-Fe crystal structure (A2) have been grown on GaAs(001) by molecular beam epitaxy. The saturated magnetization (M{sub S}) decreased from 1371 to 1105 kA/m with increasing Ga concentration from 10.5 to 24.3 % at room temperature. The lattice parameter increased with the increase in Ga content because of the larger atomic radius of Ga atom than that of Fe. The increase in carrier density with Ga content caused in lower resistivity.

  9. Graphene induced remote surface scattering in graphene/AlGaN/GaN heterostructures

    SciTech Connect

    Liu, Xiwen; Li, Dan; Wang, Bobo; Liu, Bin; Chen, Famin; Jin, Guangri; Lu, Yanwu

    2014-10-20

    The mobilities of single-layer graphene combined with AlGaN/GaN heterostructures on two-dimensional electron gases in graphene/AlGaN/GaN double heterojunction are calculated. The impact of electron density in single-layer graphene is also studied. Remote surface roughness (RSR) and remote interfacial charge (RIC) scatterings are introduced into this heterostructure. The mobilities limited by RSR and RIC are an order of magnitude higher than that of interface roughness and misfit dislocation. This study contributes to designing structures for generation of higher electron mobility in graphene/AlGaN/GaN double heterojunction.

  10. EIS-0006: Wind Turbine Generator System, Block Island, Rhode Island

    Energy.gov [DOE]

    The U.S. Department of Energy prepared this EIS to evaluate the environmental impacts of installing and operating a large experimental wind turbine, designated the MOD-OA, which is proposed to be installed on a knoll in Rhode Island's New Meadow Hill Swamp, integrated with the adjacent Block Island Power Company power plant and operated to supply electricity to the existing utility network.

  11. Band Structure of Strain-Balanced GaAsBi/GaAsN Super-lattices on GaAs

    SciTech Connect

    Hwang, J.; Phillips, J. D.

    2011-05-31

    GaAs alloys with dilute content of Bi and N provide a large reduction in band-gap energy with increasing alloy composition. GaAsBi/GaAsN heterojunctions have a type-II band alignment, where superlattices based on these materials offer a wide range for designing effective band-gap energy by varying superlattice period and alloy composition. The miniband structure and effective band gap for strain-balanced GaAsBi/GaAsN superlattices with effective lattice match to GaAs are calculated for alloy compositions up to 5% Bi and N using the kp method. The effective band gap for these superlattices is found to vary between 0.89 and 1.32 eV for period thickness ranging from 10 to 100 . The joint density of states and optical absorption of a 40/40 GaAs0.96Bi0.04/GaAs0.98N0.02 superlattice are reported demonstrating a ground-state transition at 1.005 eV and first excited transition at 1.074 eV. The joint density of states is similar in magnitude to GaAs, while the optical absorption is approximately one order of magnitude lower due to the spatially indirect optical transition in the type-II structure. The GaAsBi/GaAsN system may provide a new material system with lattice match to GaAs in a spectral range of high importance for optoelectronic devices including solar cells, photodetectors, and light emitters.

  12. Optical and magnetotransport properties of InGaAs/GaAsSb/GaAs structures doped with a magnetic impurity

    SciTech Connect

    Kalentyeva, I. L. Zvonkov, B. N.; Vikhrova, O. V.; Danilov, Yu. A.; Demina, P. B.; Dorokhin, M. V.; Zdoroveyshchev, A. V.

    2015-11-15

    InGaAs/GaAsSb/GaAs bilayer quantum-well structures containing a magnetic-impurity δ-layer (Mn) at the GaAs/InGaAs interface are experimentally studied for the first time. The structures are fabricated by metal organic chemical-vapor deposition (MOCVD) and laser deposition on substrates of conducting (n{sup +}) and semi-insulating GaAs in a single growth cycle. The InGaAs-layer thickness is varied from 1.5 to 5 nm. The significant effect of a decrease in the InGaAs quantum-well thickness on the optical and magnetotransport properties of the structures under study is detected. Nonlinear magnetic-field dependence of the Hall resistance and negative magnetoresistance at temperatures of ≤30–40 K, circular polarization of the electroluminescence in a magnetic field, opposite behaviors of the photoluminescence and electroluminescence emission intensities in the structures, and an increase in the contribution of indirect transitions with decreasing InGaAs thickness are observed. Simulation shows that these effects can be caused by the influence of the δ-layer of acceptor impurity (Mn) on the band structure and the hole concentration distribution in the bilayer quantum well.

  13. AlGaAsSb/GaSb Distributed Bragg Reflectors Grown by Organometallic Vapor Phase Epitaxy

    SciTech Connect

    C.A. Wang; C.J. Vineis; D.R. Calawa

    2002-02-13

    The first AlGaAsSb/GaSb quarter-wave distributed Bragg reflectors grown by metallic vapor phase epitaxy are reported. The peak reflectance is 96% for a 10-period structure.

  14. Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs...

    Office of Scientific and Technical Information (OSTI)

    irradiated AlGaNGaN HEMTs This content will become publicly available on August 26, 2016 Title: Degradation mechanisms of 2 MeV proton irradiated AlGaNGaN HEMTs Authors: ...

  15. Island Gas | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    United Kingdom Zip: W1J 7BU Sector: Renewable Energy Product: UK-based coal bed methane company, Island Gas was the subject of a reverse takeover by KP Renewables in...

  16. Lessons Learned in Islands | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Energy Transition Initiative » Lessons Learned in Islands Lessons Learned in Islands Hawai'i, the U.S. Virgin Islands, and other island communities have successfully implemented renewable energy and energy efficiency technologies to decrease their reliance on fossil fuels and achieve sustainability, economic development, and other goals. Read how in these lessons learned, which are also featured in the Islands Energy Playbook. Assessing Pathways in Aruba Learn how Aruba developed an actionable

  17. (In,Ga)As/GaP electrical injection quantum dot laser

    SciTech Connect

    Heidemann, M. Höfling, S.; Kamp, M.

    2014-01-06

    The paper reports on the realization of multilayer (In,Ga)As/GaP quantum dot (QD) lasers grown by gas source molecular beam epitaxy. The QDs have been embedded in (Al,Ga)P/GaP waveguide structures. Laser operation at 710 nm is obtained for broad area laser devices with a threshold current density of 4.4 kA/cm{sup 2} at a heat-sink temperature of 80 K.

  18. US SoAtl GA Site Consumption

    Energy Information Administration (EIA) (indexed site)

    GA Site Consumption million Btu $0 $500 $1,000 $1,500 $2,000 $2,500 US SoAtl GA Expenditures dollars ALL ENERGY average per household (excl. transportation) 0 4,000 8,000 12,000 16,000 US SoAtl GA Site Consumption kilowatthours $0 $300 $600 $900 $1,200 $1,500 $1,800 US SoAtl GA Expenditures dollars ELECTRICITY ONLY average per household * Site energy consumption (89.5 million Btu) and energy expenditures per household ($2,067) in Georgia are similar to the U.S. household averages. * Per

  19. Rhode Island Offshore Wind Farm | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Rhode Island Offshore Wind Farm Jump to: navigation, search Name Rhode Island Offshore Wind Farm Facility Rhode Island Offshore Wind Farm Sector Wind energy Facility Type Offshore...

  20. Long Island Power Authority Solar Project | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Long Island Power Authority Solar Project Jump to: navigation, search Name Long Island Power Authority Solar Project Facility Long Island Power Authority Solar Project Sector Solar...

  1. Mustang Island Offshore Wind Farm | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Island Offshore Wind Farm Jump to: navigation, search Name Mustang Island Offshore Wind Farm Facility Mustang Island Offshore Wind Farm Sector Wind energy Facility Type Offshore...

  2. Newport County, Rhode Island: Energy Resources | Open Energy...

    OpenEI (Open Energy Information) [EERE & EIA]

    5 Climate Zone Subtype A. Registered Energy Companies in Newport County, Rhode Island Forbes Energy LLC Places in Newport County, Rhode Island Jamestown, Rhode Island Little...

  3. Newby Island I Biomass Facility | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Newby Island I Biomass Facility Jump to: navigation, search Name Newby Island I Biomass Facility Facility Newby Island I Sector Biomass Facility Type Landfill Gas Location Santa...

  4. Saint Paul Island Wind Farm | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Paul Island Wind Farm Jump to: navigation, search Name Saint Paul Island Wind Farm Facility Saint Paul Island Sector Wind energy Facility Type Community Wind Facility Status In...

  5. GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators

    SciTech Connect

    Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

    2005-08-01

    We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

  6. EIS-0476: Vogtle Electric Generating Plant in Burke County, GA...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    6: Vogtle Electric Generating Plant in Burke County, GA EIS-0476: Vogtle Electric Generating Plant in Burke County, GA EIS-0476: Final Environmental Impact Statement EIS-0476: ...

  7. A hole modulator for InGaN/GaN light-emitting diodes

    SciTech Connect

    Zhang, Zi-Hui; Kyaw, Zabu; Liu, Wei; Ji, Yun; Wang, Liancheng; Tan, Swee Tiam; Sun, Xiao Wei E-mail: VOLKAN@stanfordalumni.org; Demir, Hilmi Volkan E-mail: VOLKAN@stanfordalumni.org

    2015-02-09

    The low p-type doping efficiency of the p-GaN layer has severely limited the performance of InGaN/GaN light-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active region. The essence of improving the hole injection efficiency is to increase the hole concentration in the p-GaN layer. Therefore, in this work, we have proposed a hole modulator and studied it both theoretically and experimentally. In the hole modulator, the holes in a remote p-type doped layer are depleted by the built-in electric field and stored in the p-GaN layer. By this means, the overall hole concentration in the p-GaN layer can be enhanced. Furthermore, the hole modulator is adopted in the InGaN/GaN LEDs, which reduces the effective valance band barrier height for the p-type electron blocking layer from ?332?meV to ?294?meV at 80?A/cm{sup 2} and demonstrates an improved optical performance, thanks to the increased hole concentration in the p-GaN layer and thus the improved hole injection into the MQWs.

  8. One million served: Rhode Island`s recycling facility

    SciTech Connect

    Malloy, M.G.

    1997-11-01

    Rhode Island`s landfill and adjacent materials recovery facility (MRF) in Johnston, both owned by the quasi-public Rhode Island Resource Recovery Corp. (RIRRC, Johnston), serve the entire state. The $12-million recycling facility was built in 1989 next to the state`s sole landfill, the Central Landfill, which accepts only in-state trash. The MRF is operated for RIRRC by New England CRInc. (Hampton, N.H.), a unit of Waste Management, Inc. (WMI, Oak Brook, Ill.). It handles a wide variety of materials, from the usual newspaper, cardboard, and mixed containers to new streams such as wood waste, scrap metal, aseptic packaging (milk and juice boxes), and even textiles. State municipalities are in the process of adding many of these new recyclable streams into their curbside collection programs, all of which feed the facility.

  9. AlGaN/GaN heterostructure prepared on a Si (110) substrate via pulsed sputtering

    SciTech Connect

    Watanabe, T.; Ohta, J.; Kondo, T.; Ohashi, M.; Ueno, K.; Kobayashi, A.; Fujioka, H.

    2014-05-05

    GaN films were grown on Si (110) substrates using a low-temperature growth technique based on pulsed sputtering. Reduction of the growth temperature suppressed the strain in the GaN films, leading to an increase in the critical thickness for crack formation. In addition, an AlGaN/GaN heterostructure with a flat heterointerface was prepared using this technique. Furthermore, the existence of a two dimensional electron gas at the heterointerface with a mobility of 1360 cm{sup 2}/Vs and a sheet carrier density of 1.3??10{sup 13}?cm{sup ?2} was confirmed. Finally, the use of the AlGaN/GaN heterostructure in a high electron mobility transistor was demonstrated. These results indicate that low-temperature growth via pulsed sputtering is quite promising for the fabrication of GaN-based electronic devices.

  10. Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors

    SciTech Connect

    Liu, Chao; Cai, Yuefei; Liu, Zhaojun; Ma, Jun; Lau, Kei May

    2015-05-04

    We report a metal-interconnection-free integration scheme for InGaN/GaN light emitting diodes (LEDs) and AlGaN/GaN high electron mobility transistors (HEMTs) by combining selective epi removal (SER) and selective epitaxial growth (SEG) techniques. SER of HEMT epi was carried out first to expose the bottom unintentionally doped GaN buffer and the sidewall GaN channel. A LED structure was regrown in the SER region with the bottom n-type GaN layer (n-electrode of the LED) connected to the HEMTs laterally, enabling monolithic integration of the HEMTs and LEDs (HEMT-LED) without metal-interconnection. In addition to saving substrate real estate, minimal interface resistance between the regrown n-type GaN and the HEMT channel is a significant improvement over metal-interconnection. Furthermore, excellent off-state leakage characteristics of the driving transistor can also be guaranteed in such an integration scheme.

  11. Thermal island destabilization and the Greenwald limit

    DOE PAGES [OSTI]

    White, R. B.; Gates, D. A.; Brennan, D. P.

    2015-02-24

    Magnetic reconnection is ubiquitous in the magnetosphere, the solar corona, and in toroidal fusion research discharges. A magnetic island saturates at a width which produces a minimum in the magnetic energy of the configuration is evident in a fusion device. At saturation, the modified current density profile, a function of the flux in the island, is essentially flat, the growth rate proportional to the difference in the current at the O-point and the X-point. Furthermore, modification of the current density profile in the island interior causes a change in the island stability and additional growth or contraction of the saturatedmore » island. Because field lines in an island are isolated from the outside plasma, an island can heat or cool preferentially depending on the balance of Ohmic heating and radiation loss in the interior, changing the resistivity and hence the current in the island. A simple model of island destabilization due to radiation cooling of the island is constructed, and the effect of modification of the current within an island is calculated. In addition destabilization effect is described, and it is shown that a small imbalance of heating can lead to exponential growth of the island. A destabilized magnetic island near the plasma edge can lead to plasma loss, and because the radiation is proportional to plasma density and charge, this effect can cause an impurity dependent density limit.« less

  12. Thermal island destabilization and the Greenwald limit

    SciTech Connect

    White, R. B.; Gates, D. A.; Brennan, D. P.

    2015-02-15

    Magnetic reconnection is ubiquitous in the magnetosphere, the solar corona, and in toroidal fusion research discharges. In a fusion device, a magnetic island saturates at a width which produces a minimum in the magnetic energy of the configuration. At saturation, the modified current density profile, a function of the flux in the island, is essentially flat, the growth rate proportional to the difference in the current at the O-point and the X-point. Further modification of the current density profile in the island interior causes a change in the island stability and additional growth or contraction of the saturated island. Because field lines in an island are isolated from the outside plasma, an island can heat or cool preferentially depending on the balance of Ohmic heating and radiation loss in the interior, changing the resistivity and hence the current in the island. A simple model of island destabilization due to radiation cooling of the island is constructed, and the effect of modification of the current within an island is calculated. An additional destabilization effect is described, and it is shown that a small imbalance of heating can lead to exponential growth of the island. A destabilized magnetic island near the plasma edge can lead to plasma loss, and because the radiation is proportional to plasma density and charge, this effect can cause an impurity dependent density limit.

  13. Hawaii Island Groundwater Flow Model

    DOE Data Explorer

    Nicole Lautze

    2015-01-01

    Groundwater flow model for Hawaii Island. Data is from the following sources: Whittier, R.B., K. Rotzoll, S. Dhal, A.I. El-Kadi, C. Ray, G. Chen, and D. Chang. 2004. Hawaii Source Water Assessment Program Report – Volume II – Island of Hawaii Source Water Assessment Program Report. Prepared for the Hawaii Department of Health, Safe Drinking Water Branch. University of Hawaii, Water Resources Research Center. Updated 2008; and Whittier, R. and A.I. El-Kadi. 2014. Human and Environmental Risk Ranking of Onsite Sewage Disposal Systems For the Hawaiian Islands of Kauai, Molokai, Maui, and Hawaii – Final. Prepared by the University of Hawaii, Dept. of Geology and Geophysics for the State of Hawaii Dept. of Health, Safe Drinking Water Branch. September 2014.

  14. Recharge Data for Hawaii Island

    DOE Data Explorer

    Nicole Lautze

    2015-01-01

    Recharge data for Hawaii Island in shapefile format. The data are from the following sources: Whittier, R.B and A.I. El-Kadi. 2014. Human Health and Environmental Risk Ranking of On-Site Sewage Disposal systems for the Hawaiian Islands of Kauai, Molokai, Maui, and Hawaii – Final, Prepared for Hawaii Dept. of Health, Safe Drinking Water Branch by the University of Hawaii, Dept. of Geology and Geophysics. Oki, D. S. 1999. Geohydrology and Numerical Simulation of the Ground-Water Flow System of Kona, Island of Hawaii. U.S. Water-Resources Investigation Report: 99-4073. Oki, D. S. 2002. Reassessment of Ground-water Recharge and Simulated Ground-Water Availability for the Hawi Area of North Kohala, Hawaii. U.S. Geological Survey Water-Resources Investigation report 02-4006.

  15. ARM - News from the Ascension Island deployment

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    govNews from the Ascension Island deployment News from the Ascension Island deployment Media Coverage Features ClimateWire "Do clouds + smoke = climate change? Africa may have answers" *Subscription required. June 16, 2016

  16. REAP Islanded Grid Wind Power Conference

    Energy.gov [DOE]

    Hosted by Renewable Energy Alaska Project, this three-day conference will show attendees how to learn, network, and share information on wind systems in island and islanded grid environments through expert panel discussions, stakeholder dialogue, and training.

  17. Bainbridge Island Data Dashboard | Department of Energy

    Energy.gov [DOE] (indexed site)

    The data dashboard for Bainbridge Island, a partner in the U.S. Department of Energy's Better Buildings Neighborhood Program. Bainbridge Island Data Dashboard (301.2 KB) More ...

  18. Market Update: New England Islanded Grids

    Energy.gov [DOE]

    Join the Islanded Grid Resource Center (IGRC) for our upcoming webinar highlighting the islanded grid communities along the New England coast that are exploring their options for reducing high...

  19. REAP Islanded Grid Wind Power Conference

    Energy.gov [DOE]

    Hosted by Renewable Energy Alaska Project, this three-day conference will show attendees how to learn, network, and share information on wind systems in island and islanded grid environments...

  20. Carrier quenching in InGaP/GaAs double heterostructures

    SciTech Connect

    Wells, Nathan P. Driskell, Travis U.; Hudson, Andrew I.; LaLumondiere, Stephen D.; Lotshaw, William T.; Forbes, David V.; Hubbard, Seth M.

    2015-08-14

    Photoluminescence measurements on a series of GaAs double heterostructures demonstrate a rapid quenching of carriers in the GaAs layer at irradiance levels below 0.1 W/cm{sup 2} in samples with a GaAs-on-InGaP interface. These results indicate the existence of non-radiative defect centers at or near the GaAs-on-InGaP interface, consistent with previous reports showing the intermixing of In and P when free As impinges on the InGaP surface during growth. At low irradiance, these defect centers can lead to sub-ns carrier lifetimes. The defect centers involved in the rapid carrier quenching can be saturated at higher irradiance levels and allow carrier lifetimes to reach hundreds of nanoseconds. To our knowledge, this is the first report of a nearly three orders of magnitude decrease in carrier lifetime at low irradiance in a simple double heterostructure. Carrier quenching occurs at irradiance levels near the integrated Air Mass Zero (AM0) and Air Mass 1.5 (AM1.5) solar irradiance. Additionally, a lower energy photoluminescence band is observed both at room and cryogenic temperatures. The temperature and time dependence of the lower energy luminescence is consistent with the presence of an unintentional InGaAs or InGaAsP quantum well that forms due to compositional mixing at the GaAs-on-InGaP interface. Our results are of general interest to the photovoltaic community as InGaP is commonly used as a window layer in GaAs based solar cells.

  1. Energy Transition Initiative: Island Energy Snapshot - U.S. Virgin Islands (Fact Sheet)

    SciTech Connect

    Not Available

    2015-03-01

    This profile provides a snapshot of the energy landscape of the U.S. Virgin Islands (USVI) - St. Thomas, St. John, and St. Croix. The Virgin Islands archipelago makes up the northern portion of the Lesser Antilles and the western island group of the Leeward Islands, forming the border between the Atlantic Ocean and the Caribbean Sea.

  2. Islands and Our Renewable Energy Future (Presentation)

    SciTech Connect

    Baring-Gould, I.; Gevorgian, V.; Kelley, K.; Conrad, M.

    2012-05-01

    Only US Laboratory Dedicated Solely to Energy Efficiency and Renewable Energy. High Contribution Renewables in Islanded Power Systems.

  3. Past, Present, Future Erosion at Locke Island

    SciTech Connect

    Bjornstad, Bruce N.

    2006-08-08

    This report describes and documents the erosion that has occurred along the northeast side of Locke Island over the last 10 to 20 years. The principal cause of this erosion is the massive Locke Island landslide complex opposite the Columbia River along the White Bluffs, which constricts the flow of the river and deflects the river's thalweg southward against the island.

  4. Accelerated aging of GaAs concentrator solar cells

    SciTech Connect

    Gregory, P.E.

    1982-04-01

    An accelerated aging study of AlGaAs/GaAs solar cells has been completed. The purpose of the study was to identify the possible degradation mechanisms of AlGaAs/GaAs solar cells in terrestrial applications. Thermal storage tests and accelerated AlGaAs corrosion studies were performed to provide an experimental basis for a statistical analysis of the estimated lifetime. Results of this study suggest that a properly designed and fabricated AlGaAs/GaAs solar cell can be mechanically rugged and environmentally stable with projected lifetimes exceeding 100 years.

  5. Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures

    SciTech Connect

    Kuppulingam, B. Singh, Shubra Baskar, K.

    2014-04-24

    Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

  6. Zinc blende GaAs films grown on wurtzite GaN/sapphire templates

    SciTech Connect

    Chaldyshev, V.V.; Nielsen, B.; Mendez, E.E.; Musikhin, Yu.G.; Bert, N.A.; Ma, Zh.; Holden, Todd

    2005-03-28

    1-{mu}m-thick zinc-blende GaAs (111) films were grown by molecular-beam epitaxy on wurtzite GaN/sapphire (0001) templates. In spite of a {approx}20% lattice mismatch, epitaxial growth was realized, so that the GaAs films showed good adhesion and their surface had a larger mirror-like area with an average surface roughness of 10 nm. Transmission electron microscopy revealed a flat and abrupt epitaxial GaAs/GaN interface with some nanocavities and a large number of dislocations. Reasonably good crystalline quality of the GaAs films was confirmed by Raman characterization. Spectroscopic ellipsometry showed sharp interference fringes and characteristic parameters in the range of 0.75-5.3 eV. Photoluminescence study revealed extended band tails and dominance of non-radiative carrier recombination.

  7. High-performance InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor

    SciTech Connect

    Tsai, J.-H. Chiu, S.-Y.; Lour, W.-S.; Guo, D.-F.

    2009-07-15

    In this article, a novel InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor is first demonstrated. Though the valence band discontinuity at InGaP/GaAs heterojunction is relatively large, the addition of a {delta}-doped sheet between two spacer layers at the emitter-base (E-B) junction effectively eliminates the potential spike and increases the confined barrier for electrons, simultaneously. Experimentally, a high current gain of 25 and a relatively low E-B offset voltage of 60 mV are achieved. The offset voltage is much smaller than the conventional InGaP/GaAs pnp HBT. The proposed device could be used for linear amplifiers and low-power complementary integrated circuit applications.

  8. Oxidation of ultrathin GaSe

    SciTech Connect

    Thomas Edwin Beechem; McDonald, Anthony E.; Ohta, Taisuke; Howell, Stephen W.; Kalugin, Nikolai G.; Kowalski, Brian M.; Brumbach, Michael T.; Spataru, Catalin D.; Pask, Jesse A.

    2015-10-26

    Oxidation of exfoliated gallium selenide (GaSe) is investigated through Raman, photoluminescence, Auger, and X-ray photoelectron spectroscopies. Photoluminescence and Raman intensity reductions associated with spectral features of GaSe are shown to coincide with the emergence of signatures emanating from the by-products of the oxidation reaction, namely, Ga2Se3 and amorphous Se. Furthermore, photoinduced oxidation is initiated over a portion of a flake highlighting the potential for laser based patterning of two-dimensional heterostructures via selective oxidation.

  9. Oxidation of ultrathin GaSe

    DOE PAGES [OSTI]

    Thomas Edwin Beechem; McDonald, Anthony E.; Ohta, Taisuke; Howell, Stephen W.; Kalugin, Nikolai G.; Kowalski, Brian M.; Brumbach, Michael T.; Spataru, Catalin D.; Pask, Jesse A.

    2015-10-26

    Oxidation of exfoliated gallium selenide (GaSe) is investigated through Raman, photoluminescence, Auger, and X-ray photoelectron spectroscopies. Photoluminescence and Raman intensity reductions associated with spectral features of GaSe are shown to coincide with the emergence of signatures emanating from the by-products of the oxidation reaction, namely, Ga2Se3 and amorphous Se. Furthermore, photoinduced oxidation is initiated over a portion of a flake highlighting the potential for laser based patterning of two-dimensional heterostructures via selective oxidation.

  10. Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire

    SciTech Connect

    Tatebayashi, J. Ota, Y.; Ishida, S.; Nishioka, M.; Iwamoto, S.; Arakawa, Y.

    2014-09-08

    We demonstrate a highly uniform, dense stack of In{sub 0.22}Ga{sub 0.78}As/GaAs quantum dot (QD) structures in a single GaAs nanowire (NW). The size (and hence emission energy) of individual QD is tuned by careful control of the growth conditions based on a diffusion model of morphological evolution of NWs and optical characterization. By carefully tailoring the emission energies of individual QD, dot-to-dot inhomogeneous broadening of QD stacks in a single NW can be as narrow as 9.3?meV. This method provides huge advantages over traditional QD stack using a strain-induced Stranski-Krastanow growth scheme. We show that it is possible to fabricate up to 200 uniform QDs in single GaAs NWs using this growth technique without degradation of the photoluminescence intensity.

  11. Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT

    SciTech Connect

    Das, Palash Biswas, Dhrubes

    2014-04-24

    The self consistent solution of Schrodinger and Poisson equations is used along with the total charge depletion model and applied with a novel approach of composite AlGaN barrier based HEMT heterostructure. The solution leaded to a completely new analytical model for Fermi energy level vs. 2DEG carrier concentration. This was eventually used to demonstrate a new analytical model for the temperature dependent 2DEG carrier concentration in AlGaN/GaN HEMT.

  12. Ultra-high frequency photoconductivity decay in GaAs/Ge/GaAs double heterostructure grown by molecular beam epitaxy

    SciTech Connect

    Hudait, M. K.; Zhu, Y.; Johnston, S. W.; Maurya, D.; Priya, S.; Umbel, R.

    2013-03-04

    GaAs/Ge/GaAs double heterostructures (DHs) were grown in-situ using two separate molecular beam epitaxy chambers. High-resolution x-ray rocking curve demonstrates a high-quality GaAs/Ge/GaAs heterostructure by observing Pendelloesung oscillations. The kinetics of the carrier recombination in Ge/GaAs DHs were investigated using photoconductivity decay measurements by the incidence excitation from the front and back side of 15 nm GaAs/100 nm Ge/0.5 {mu}m GaAs/(100)GaAs substrate structure. High-minority carrier lifetimes of 1.06-1.17 {mu}s were measured when excited from the front or from the back of the Ge epitaxial layer, suggests equivalent interface quality of GaAs/Ge and Ge/GaAs. Wavelength-dependent minority carrier recombination properties are explained by the wavelength-dependent absorption coefficient of Ge.

  13. Magnetic coupling in ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers

    SciTech Connect

    Wang, M.; Wadley, P.; Campion, R. P.; Rushforth, A. W.; Edmonds, K. W.; Gallagher, B. L.; Charlton, T. R.; Kinane, C. J.; Langridge, S.

    2015-08-07

    We report on a study of ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers using magnetometry and polarized neutron reflectivity (PNR). From depth-resolved characterization of the magnetic structure obtained by PNR, we concluded that the (Ga,Mn)As and (Al,Ga,Mn)As layers have in-plane and perpendicular-to-plane magnetic easy axes, respectively, with weak interlayer coupling. Therefore, the layer magnetizations align perpendicular to each other under low magnetic fields and parallel at high fields.

  14. Magnetic island evolution in hot ion plasmas

    SciTech Connect

    Ishizawa, A.; Nakajima, N.; Waelbroeck, F. L.; Fitzpatrick, R.; Horton, W.

    2012-07-15

    Effects of finite ion temperature on magnetic island evolution are studied by means of numerical simulations of a reduced set of two-fluid equations which include ion as well as electron diamagnetism in slab geometry. The polarization current is found to be almost an order of magnitude larger in hot than in cold ion plasmas, due to the strong shear of ion velocity around the separatrix of the magnetic islands. As a function of the island width, the propagation speed decreases from the electron drift velocity (for islands thinner than the Larmor radius) to values close to the guiding-center velocity (for islands of order 10 times the Larmor radius). In the latter regime, the polarization current is destabilizing (i.e., it drives magnetic island growth). This is in contrast to cold ion plasmas, where the polarization current is generally found to have a healing effect on freely propagating magnetic island.

  15. US SoAtl GA Site Consumption

    Annual Energy Outlook

    ... Yes Yes No No 0% 20% 40% 60% 80% 100% US GA No Car CAR IS PARKED WITHIN 20 FT OF ELECTRICAL OUTLET More highlights from RECS on housing characteristics and energy-related ...

  16. Princeton Plasma Physics Lab - General Atomics (GA)

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    general-atomics-ga General Atomics en The Scorpion's Strategy: "Catch and Subdue" http:www.pppl.govnode1132

  17. Correlation between morphology, chemical environment, and ferromagnetism in the intrinsic-vacancy dilute magnetic semiconductor Cr-doped Ga2Se3/Si(001)

    SciTech Connect

    Yitamben, E.N.; Arena, D.; Lovejoy, T.C.; Pakhomov, A.B.; Heald, S.M.; Negusse, E.; Ohuchi, F.S.; Olmstead, M.A.

    2011-01-28

    Chromium-doped gallium sesquiselenide, Cr:Ga{sub 2}Se{sub 3}, is a member of a new class of dilute magnetic semiconductors exploiting intrinsic vacancies in the host material. The correlation among room-temperature ferromagnetism, surface morphology, electronic structure, chromium concentration, and local chemical and structural environments in Cr:Ga{sub 2}Se{sub 3} films grown epitaxially on silicon is investigated with magnetometry, scanning tunneling microscopy, photoemission spectroscopy, and x-ray absorption spectroscopy. Inclusion of a few percent chromium in Ga{sub 2}Se{sub 3} results in laminar, semiconducting films that are ferromagnetic at room temperature with a magnetic moment 4{micro}{sub B}/Cr. The intrinsic-vacancy structure of defected-zinc-blende {beta}-Ga{sub 2}Se{sub 3} enables Cr incorporation in a locally octahedral site without disrupting long-range order, determined by x-ray absorption spectroscopy, as well as strong overlap between Cr 3d states and the Se 4p states lining the intrinsic-vacancy rows, observed with photoemission. The highest magnetic moment per Cr is observed near the solubility limit of roughly one Cr per three vacancies. At higher Cr concentrations, islanded, metallic films result, with a magnetic moment that depends strongly on surface morphology. The effective valence is Cr{sup 3+} in laminar films, with introduction of Cr{sup 0} upon islanding. A mechanism is proposed for laminar films whereby ordered intrinsic vacancies mediate ferromagnetism.

  18. GaTe semiconductor for radiation detection

    DOEpatents

    Payne, Stephen A.; Burger, Arnold; Mandal, Krishna C.

    2009-06-23

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  19. GaP ring-like nanostructures on GaAs (100) with In{sub 0.15}Ga{sub 0.85}As compensation layers

    SciTech Connect

    Prongjit, Patchareewan Pankaow, Naraporn Boonpeng, Poonyasiri Thainoi, Supachok Panyakeow, Somsak Ratanathammaphan, Somchai

    2013-12-04

    We present the fabrication of GaP ring-like nanostructures on GaAs (100) substrates with inserted In{sub 0.15}Ga{sub 0.85}As compensation layers. The samples are grown by droplet epitaxy using solid-source molecular beam epitaxy. The dependency of nanostructural and optical properties of GaP nanostructures on In{sub 0.15}Ga{sub 0.85}As layer thickness is investigated by ex-situ atomic force microscope (AFM) and photoluminescence (PL). It is found that the characteristics of GaP ring-like structures on GaAs strongly depend on the In{sub 0.15}Ga{sub 0.85}As layer thickness.

  20. The Pd/Fe Interface in the Epitaxial System Pd/Fe/GaAs(001)- 4 x 6

    SciTech Connect

    Budnik, P.S.; Gordon, R.A.; Crozier, E.D.

    2007-01-18

    Magnetic properties of thin magnetic films are strongly affected by the nature of the interface between magnetic and non-magnetic layers. In spintronic devices the extent to which spins are scattered at an interface depends upon interfacial roughness, alloying, and impurities. We present a polarization-dependent XAFS study of a 1Pd/9Fe/GaAs(001)-(4 x 6) structure grown in situ in the MBE facility at the PNC/XOR, APS. To increase the interfacial roughness, the 1ML Pd was grown on the 9 ML Fe without first sputtering and annealing the Fe. An estimate of interfacial roughness, evidence for formation of Pd islands, their height, and the amount of As floating to the Pd surface from the GaAs are given.

  1. Price of Elba Island, GA Natural Gas LNG Imports from Egypt ...

    Energy Information Administration (EIA) (indexed site)

    Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 2000's -- 11.33 6.74 6.81 9.36 3.72 2010's 4.50 3.97 2.52 -- --

  2. Price of Elba Island, GA Natural Gas LNG Imports from Egypt ...

    Energy Information Administration (EIA) (indexed site)

    Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 4.21 3.67 4.14 4.29 4.22 3.22 2012 2.52...

  3. Price of Elba Island, GA Liquefied Natural Gas Total Imports (Dollars per

    Energy Information Administration (EIA) (indexed site)

    Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 2000's 5.12 6.47 9.18 7.03 6.79 9.71 3.73 2010's 4.39 4.20 2.78 3.36 4.33 2.84

  4. Price of Elba Island, GA Natural Gas LNG Imports from Trinidad and Tobago

    Energy Information Administration (EIA) (indexed site)

    (Dollars per Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1990's NA 2000's NA 1.92 3.51 5.12 6.47 8.59 7.14 6.85 9.88 3.75 2010's 4.28 3.86 2.71 3.28 4.33 2.84

  5. Price of Elba Island, GA Natural Gas LNG Imports from Trinidad and Tobago

    Energy Information Administration (EIA) (indexed site)

    (Dollars per Thousand Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 4.15 3.71 4.31 3.78 3.26 3.26 2012 2.30 1.87 2.28 2.64 2.89 2.49 3.62 2013 3.25 3.12 3.48 2014 4.36 4.82 4.58 3.91 2015 3.08 2.74 2.76 2.76 2016 1.52

  6. Elba Island, GA LNG Imports (Price) from Qatar (Dollars per Thousand Cubic

    Energy Information Administration (EIA) (indexed site)

    Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 2000's -- -- -- 2010's -- 4.69 2.84 3.45 -- --

  7. Elba Island, GA LNG Imports (Price) from Qatar (Dollars per Thousand Cubic

    Energy Information Administration (EIA) (indexed site)

    Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 5.09 5.13 5.10 4.52 4.45 4.14 4.01 2012 3.65 2.94 2.17 2.00 2.82 3.09 2.67 3.10 3.61 2013 3.34 3.57

  8. Electrolysis on an Island Grid

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Electrolysis on an Island Grid Mitch Ewan Hydrogen Systems Program Manager Hawaii Natural Energy Institute School of Ocean Earth Science and Technology University of Hawaii at Manoa 28 February 2014 High Percentages of As-Available Renewable Resources Creates Problems for Grid Systems 1300MW 75MW 5MW 200MW  Good renewable resource mix;  High electricity costs; and  Grid issues.  Provide unique opportunity for validation and deployment of new renewable and enabling technologies. 200MW

  9. TWP Island Cloud Trail Studies

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Pacific Island Cloud Trail Studies W. M. Porch Los Alamos National Laboratory Los Alamos, New Mexico S. Winiecki University of Chicago Chicago, Illinois Introduction Images and surface temperature measurements from the U.S. Department of Energy (DOE) Multi- spectral Thermal Imaging (MTI) satellite are combined with geostationary meteorological satellite (GMS) images during 2000 and 2001 to better understand cloud trail formation characteristics from the Atmospheric Radiation Measurement (ARM)

  10. The Three Mile Island crisis

    SciTech Connect

    Houts, P.S.; Cleary, P.D.; Hu, T.W.

    1988-01-01

    Since the March 1979 accident at the Three Mile Island (TMI) nuclear power plant, many studies have assessed its impacts. Compiled and summarized in this book are the results of five related surveys, all aimed at the scientific assessment of the psycho-socio-economic behavior of the residents around the TMI facility. These studies are based on a randomly selected, large sample of the population (with telephones) around TMI.

  11. Pathogenicity island mobility and gene content.

    SciTech Connect

    Williams, Kelly Porter

    2013-10-01

    Key goals towards national biosecurity include methods for analyzing pathogens, predicting their emergence, and developing countermeasures. These goals are served by studying bacterial genes that promote pathogenicity and the pathogenicity islands that mobilize them. Cyberinfrastructure promoting an island database advances this field and enables deeper bioinformatic analysis that may identify novel pathogenicity genes. New automated methods and rich visualizations were developed for identifying pathogenicity islands, based on the principle that islands occur sporadically among closely related strains. The chromosomally-ordered pan-genome organizes all genes from a clade of strains; gaps in this visualization indicate islands, and decorations of the gene matrix facilitate exploration of island gene functions. A %E2%80%9Clearned phyloblocks%E2%80%9D method was developed for automated island identification, that trains on the phylogenetic patterns of islands identified by other methods. Learned phyloblocks better defined termini of previously identified islands in multidrug-resistant Klebsiella pneumoniae ATCC BAA-2146, and found its only antibiotic resistance island.

  12. Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices

    SciTech Connect

    Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J.; Charache, G.W.

    1997-05-01

    The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

  13. Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100)

    SciTech Connect

    Stark, Christoph J. M.; Detchprohm, Theeradetch; Wetzel, Christian, E-mail: wetzel@ieee.org [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States) [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Future Chips Constellation, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180 (United States); Lee, S. C.; Brueck, S. R. J. [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States)] [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States); Jiang, Y.-B. [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)] [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

    2013-12-02

    GaInN/GaN light-emitting diodes free of piezoelectric polarization were prepared on standard electronic-grade Si(100) substrates. Micro-stripes of GaN and GaInN/GaN quantum wells in the cubic crystal structure were grown on intersecting (111) planes of microscale V-grooved Si in metal-organic vapor phase epitaxy, covering over 50% of the wafer surface area. Crystal phases were identified in electron back-scattering diffraction. A cross-sectional analysis reveals a cubic structure virtually free of line defects. Electroluminescence over 20 to 100??A is found fixed at 487?nm (peak), 516?nm (dominant). Such structures therefore should allow higher efficiency, wavelength-stable light emitters throughout the visible spectrum.

  14. Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires

    DOE PAGES [OSTI]

    Song, Erdong; Li, Qiming; Swartzentruber, Brian; Pan, Wei; Wang, George T.; Martinez, Julio A.

    2015-11-25

    The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN coremore » of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. As a result, selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.« less

  15. Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires

    SciTech Connect

    Song, Erdong; Li, Qiming; Swartzentruber, Brian; Pan, Wei; Wang, George T.; Martinez, Julio A.

    2015-11-25

    The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN core of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. As a result, selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.

  16. InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

    SciTech Connect

    Krishnamoorthy, Sriram E-mail: rajan@ece.osu.edu; Akyol, Fatih; Rajan, Siddharth E-mail: rajan@ece.osu.edu

    2014-10-06

    InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450 nm) light emitting diode. A voltage drop of 5.3 V at 100 mA, forward resistance of 2 × 10{sup −2} Ω cm{sup 2}, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5 × 10{sup −4} Ω cm{sup 2} was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. The depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.

  17. Structural and optical properties of InGaN--GaN nanowire heterostructures grown by molecular beam epitaxy

    SciTech Connect

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Hofling, S.; Worschech, L.; Grutzmacher, D.

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, μ-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

  18. Structural and optical properties of InGaN--GaN nanowire heterostructures grown by molecular beam epitaxy

    DOE PAGES [OSTI]

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Hofling, S.; et al

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaNmore » to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, μ-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.« less

  19. Structural and optical properties of InGaNGaN nanowire heterostructures grown by molecular beam epitaxy

    DOE PAGES [OSTI]

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Ho?fling, S.; et al

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaNmoreto higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.less

  20. A signature for turbulence driven magnetic islands

    SciTech Connect

    Agullo, O.; Muraglia, M.; Benkadda, S.; Poyé, A.; Yagi, M.; Garbet, X.; Sen, A.

    2014-09-15

    We investigate the properties of magnetic islands arising from tearing instabilities that are driven by an interchange turbulence. We find that such islands possess a specific signature that permits an identification of their origin. We demonstrate that the persistence of a small scale turbulence maintains a mean pressure profile, whose characteristics makes it possible to discriminate between turbulence driven islands from those arising due to an unfavourable plasma current density gradient. We also find that the island poloidal turnover time, in the steady state, is independent of the levels of the interchange and tearing energy sources. Finally, we show that a mixing length approach is adequate to make theoretical predictions concerning island flattening in the island rotation frame.

  1. Energy Transition Initiative, Island Energy Snapshot - British Virgin Islands (Fact Sheet)

    SciTech Connect

    Not Available

    2015-03-01

    This profile provides a snapshot of the energy landscape of the British Virgin Islands (BVI), one of three sets of the Virgin Island territories in an archipelago making up the northern portion of the Lesser Antilles.

  2. NREL: Technology Deployment - Technical Assistance for Islands

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Islands NREL provides technical assistance to help islands reduce dependence on fossil fuels and increase energy security by implementing energy efficiency measures and leveraging indigenous renewable resources. Hawaii NREL Helps Design LEED Platinum Affordable Housing U.S. Virgin Islands Landmark Solar Deal Completed with NREL Support This tailored technical assistance includes: Establishing baseline energy use Measuring available renewable resources Assessing the viability of various energy

  3. Freedom Energy (Rhode Island) | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Freedom Energy Place: Rhode Island Website: www.freedomenergytechnologies. Facebook: https:www.facebook.comFreedomEnergyTechnologies References: EIA Form EIA-861 Final Data File...

  4. GEXA Corp. (Rhode Island) | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    GEXA Corp. Place: Rhode Island Website: www.gexaenergy.com Twitter: @nationalgridus Facebook: https:www.facebook.comnationalgrid Outage Hotline: 1-800-465-1212 Outage Map:...

  5. Block Island Wind Farm | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    energy Facility Type Commercial Scale Wind Facility Status Proposed Developer Deepwater Wind Location Offshore from Block Island RI Coordinates 41.1, -71.53 Show Map Loading...

  6. Asian American Pacific Islander Heritage Month

    Energy.gov [DOE]

    Generations of Asian Americans and Pacific Islanders (AAPIs) have helped make America what it is today. Their histories recall bitter hardships and proud accomplishments -- from the laborers who...

  7. Aeromagnetic Survey And Interpretation, Ascention Island, South...

    OpenEI (Open Energy Information) [EERE & EIA]

    And Interpretation, Ascention Island, South Atlantic Ocean Jump to: navigation, search OpenEI Reference LibraryAdd to library Journal Article: Aeromagnetic Survey And...

  8. Bluewater Wind Rhode Island | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Island Sector Wind energy Facility Type Offshore Wind Facility Status Proposed Owner NRG Bluewater Wind Developer NRG Bluewater Wind Location Atlantic Ocean RI Coordinates...

  9. Nauru Island Effect Detection Data Set

    DOE Data Explorer

    Long, Chuck

    2010-07-15

    During Nauru99 it was noted that the island was producing small clouds that advected over the ARM site. The Nauru Island Effect Study was run for 1.5 years and the methodology developed to detect the occurrence. Nauru ACRF downwelling SW, wind direction, and air temperature data are used, along with downwelling SW data from Licor radiometers located on the southern end of the island near the airport landing strip. A statistical analysis and comparison of data from the two locations is used to detect the likely occurrence of an island influence on the Nauru ACRF site data

  10. Marshall Islands: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Country Profile Name Marshall Islands Population 56,429 GDP Unavailable Energy Consumption Quadrillion Btu 2-letter ISO code MH 3-letter ISO code MHL Numeric ISO code...

  11. Cayman Islands: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Country Profile Name Cayman Islands Population Unavailable GDP Unavailable Energy Consumption Quadrillion Btu 2-letter ISO code KY 3-letter ISO code CYM Numeric ISO code...

  12. Pennsylvania Nuclear Profile - Three Mile Island

    Energy Information Administration (EIA) (indexed site)

    Three Mile Island" "Unit","Summer capacity (mw)","Net generation (thousand mwh)","Summer capacity factor (percent)","Type","Commercial operation date","License expiration date" ...

  13. Prairie Island Indian Community | Department of Energy

    Office of Environmental Management (EM)

    Prairie Island Indian Community (1.42 MB) More Documents & Publications Shipping Radioactive Waste by Rail from Brookhaven National Laboratory Nuclear Fuel Storage and ...

  14. Nauru Island Effect Detection Data Set

    DOE Data Explorer

    Long, Chuck

    During Nauru99 it was noted that the island was producing small clouds that advected over the ARM site. The Nauru Island Effect Study was run for 1.5 years and the methodology developed to detect the occurrence. Nauru ACRF downwelling SW, wind direction, and air temperature data are used, along with downwelling SW data from Licor radiometers located on the southern end of the island near the airport landing strip. A statistical analysis and comparison of data from the two locations is used to detect the likely occurrence of an island influence on the Nauru ACRF site data

  15. Climate change: Effects on reef island resources

    SciTech Connect

    Oberdorfer, J.A.; Buddemeier, R.W.

    1988-06-27

    The salinity, depth, quantity, and reliability of fresh groundwater resources on coral reef islands and coastlines are environmentally important parameters. Groundwater influences or controls the terrestrial flora, salinity, and nutrient levels in the near-shore benthic environment, the rate and nature of sediment diagenesis, and the density of human habitation. Data from a number of Indo-Pacific reef islands suggest that freshwater inventory is a function of rainfall and island dimensions. A numerical model (SUTRA) has been used to simulate the responses of atoll island groundwater to changes in recharge (precipitation), sea level, and loss of island area due to flooding. The model has been calibrated for Enjebi Island, Enewetak Atoll, where a moderately permeable, water-table aquifer overlies a high-permeability formation. Total freshwater inventory is a monotonic but nonlinear function of recharge. If recharge and island area are constant, rising sea level increases the inventory of fresh water by increasing the useful volume of the aquifer above the high-permeability zone. Flooding of land area reduces the total freshwater inventory approximately in proportion to the loss of recharge area. The most significant results of the model simulation, however, are the findings that the inventory of low-salinity water (and by extrapolation, potable water) is disproportionately sensitive to changes in recharge, island dimensions, or recharge. Island freshwater resources may therefore be unexpectedly vulnerable to climate change.

  16. Offshore Islands Ltd | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Jump to: navigation, search Name: Offshore Islands Ltd Region: United States Sector: Marine and Hydrokinetic Website: http: This company is listed in the Marine and Hydrokinetic...

  17. Mountain Island Energy LLC | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Mountain Island Energy, LLC Place: Soda Springs, Idaho Zip: 83276 Product: Energy and mining development company focused on next generation "clean technology". References:...

  18. Investigation of surface-plasmon coupled red light emitting InGaN/GaN multi-quantum well with Ag nanostructures coated on GaN surface

    SciTech Connect

    Li, Yi; Liu, Bin E-mail: rzhang@nju.edu.cn; Zhang, Rong E-mail: rzhang@nju.edu.cn; Xie, Zili; Zhuang, Zhe; Dai, JiangPing; Tao, Tao; Zhi, Ting; Zhang, Guogang; Chen, Peng; Ren, Fangfang; Zhao, Hong; Zheng, Youdou

    2015-04-21

    Surface-plasmon (SP) coupled red light emitting InGaN/GaN multiple quantum well (MQW) structure is fabricated and investigated. The centre wavelength of 5-period InGaN/GaN MQW structure is about 620?nm. The intensity of photoluminescence (PL) for InGaN QW with naked Ag nano-structures (NS) is only slightly increased due to the oxidation of Ag NS as compared to that for the InGaN QW. However, InGaN QW with Ag NS/SiO{sub 2} structure can evidently enhance the emission efficiency due to the elimination of surface oxide layer of Ag NS. With increasing the laser excitation power, the PL intensity is enhanced by 25%53% as compared to that for the SiO{sub 2} coating InGaN QW. The steady-state electric field distribution obtained by the three-dimensional finite-difference time-domain method is different for both structures. The proportion of the field distributed in the Ag NS for the GaN/Ag NS/SiO{sub 2} structure is smaller as compared to that for the GaN/naked Ag NS structure. As a result, the energy loss of localized SP modes for the GaN/naked Ag NS structure will be larger due to the absorption of Ag layer.

  19. Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission

    SciTech Connect

    Lekhal, K.; Damilano, B. De Mierry, P.; Venngus, P.; Ngo, H. T.; Rosales, D.; Gil, B.; Hussain, S.

    2015-04-06

    Yellow/amber (570600?nm) emitting In{sub x}Ga{sub 1?x}N/Al{sub y}Ga{sub 1?y}N/GaN multiple quantum wells (QWs) have been grown by metal organic chemical vapor deposition on GaN-on- sapphire templates. When the (Al,Ga)N thickness of the barrier increases, the room temperature photoluminescence is red-shifted while its yield increases. This is attributed to an increase of the QW internal electric field and an improvement of the material quality due to the compensation of the compressive strain of the In{sub x}Ga{sub 1?x}N QWs by the Al{sub y}Ga{sub 1?y}N layers, respectively.

  20. On strongly GA-convex functions and stochastic processes

    SciTech Connect

    Bekar, Nurgl Okur; Akdemir, Hande Gnay; ??can, ?mdat

    2014-08-20

    In this study, we introduce strongly GA-convex functions and stochastic processes. We provide related well-known Kuhn type results and Hermite-Hadamard type inequality for strongly GA-convex functions and stochastic processes.

  1. Minnesota Nuclear Profile - Prairie Island

    Energy Information Administration (EIA) (indexed site)

    Prairie Island" "Unit","Summer capacity (mw)","Net generation (thousand mwh)","Summer capacity factor (percent)","Type","Commercial operation date","License expiration date" 1,521,"4,655",102.0,"PWR","application/vnd.ms-excel","application/vnd.ms-excel" 2,519,"4,128",90.8,"PWR","application/vnd.ms-excel","application/vnd.ms-excel"

  2. Energy Transition Initiative, Island Energy Snapshot - Grenada (Fact Sheet)

    SciTech Connect

    Not Available

    2015-03-01

    This profile provides a snapshot of the energy landscape of Grenada - a small island nation consisting of the island of Grenada and six smaller islands in the southeastern Caribbean Sea - three of which are inhabited: Grenada, Carriacou, and Petite Martinique.

  3. Few-hole double quantum dot in an undoped GaAs/AlGaAs heterostructure

    SciTech Connect

    Tracy, L. A.; Hargett, T. W.; Reno, J. L.

    2014-03-24

    We demonstrate a hole double quantum dot in an undoped GaAs/AlGaAs heterostructure. The interdot coupling can be tuned over a wide range, from formation of a large single dot to two well-isolated quantum dots. Using charge sensing, we show the ability to completely empty the dot of holes and control the charge occupation in the few-hole regime. The device should allow for control of individual hole spins in single and double quantum dots in GaAs.

  4. InGaAs/GaAs quantum dot interdiffiusion induced by cap layer overgrowth

    SciTech Connect

    Jasinski, J.; Babinski, A.; Czeczott, M.; Bozek, R.

    2000-06-28

    The effect of thermal treatment during and after growth of InGaAs/GaAs quantum dot (QD) structures was studied. Transmission electron microscopy and atomic force microscopy confirmed the presence of interacting QDs, as was expected from analysis of temperature dependence of QD photoluminescence (PL) peak. The results indicate that the effect of post-growth annealing can be similar to the effect of elevated temperature of capping layer growth. Both, these thermal treatments can lead to a similar In and Ga interdiffiusion resulting in a similar blue-shift of QD PL peak.

  5. Optical spectroscopy of quantum confined states in GaAs/AlGaAs quantum well tubes

    SciTech Connect

    Shi, Teng; Fickenscher, Melodie; Smith, Leigh; Jackson, Howard; Yarrison-Rice, Jan; Gao, Qiang; Tan, Hoe; Jagadish, Chennupati; Etheridge, Joanne; Wong, Bryan M.

    2013-12-04

    We have investigated the quantum confinement of electronic states in GaAs/Al{sub x}Ga{sub 1?x}As nanowire heterostructures which contain radial GaAs quantum wells of either 4nm or 8nm. Photoluminescence and photoluminescence excitation spectroscopy are performed on single nanowires. We observed emission and excitation of electron and hole confined states. Numerical calculations of the quantum confined states using the detailed structural information on the quantum well tubes show excellent agreement with these optical results.

  6. Three-junction solar cells comprised of a thin-film GaInP/GaAs tandem cell mechanically stacked on a Si cell

    SciTech Connect

    Yazawa, Y.; Tamura, K.; Watahiki, S.; Kitatani, T.; Ohtsuka, H.; Warabisako, T.

    1997-12-31

    Three-junction tandem solar cells were fabricated by mechanical stacking of a thin-film GaInP/GaAs monolithic tandem cell and a Si cell. The epitaxial lift-off (ELO) technique was used for the thinning of GaInP/GaAs tandem cells. Both spectral responses of the GaInP top cell and the GaAs middle cell in the thin-film GaInP/GaAs monolithic tandem cell were conserved. The Si cell performance has been improved by reducing the absorption loss in the GaAs substrate.

  7. GaAs photoconductive semiconductor switch

    DOEpatents

    Loubriel, G.M.; Baca, A.G.; Zutavern, F.J.

    1998-09-08

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device is disclosed. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices. 5 figs.

  8. GaAs photoconductive semiconductor switch

    DOEpatents

    Loubriel, Guillermo M.; Baca, Albert G.; Zutavern, Fred J.

    1998-01-01

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

  9. GA-AL-SC | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    GA-AL-SC GA-AL-SC October 1, 2012 ALA-1-N Wholesale Power Rate Schedule Area: PowerSouth Energy Cooperative System: Georgia-Alabama-South Carolina October 1, 2012 Duke-1-E Wholesale Power Rate Schedule Area: Duke On-System System: Georgia-Alabama-South Carolina October 1, 2012 Duke-2-E Wholesale Power Rate Schedule Area: Central System: Georgia-Alabama-South Carolina October 1, 2012 Duke-3-E Wholesale Power Rate Schedule Area: None System: Georgia-Alabama-South Carolina October 1, 2012 Duke-4-E

  10. GaN: Defect and Device Issues

    SciTech Connect

    Pearton, S.J.; Ren, F.; Shul, R.J.; Zolper, J.C.

    1998-11-09

    The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

  11. Macquarie Island Cloud and Radiation Experiment (MICRE) Science...

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    2 Macquarie Island Cloud and Radiation Experiment (MICRE) Science Plan RT Marchand SP ... DOESC-ARM-15-082 Macquarie Island Cloud and Radiation Experiment (MICRE) Science Plan ...

  12. United States Virgin Islands: Energy Resources | Open Energy...

    OpenEI (Open Energy Information) [EERE & EIA]

    (CLEAN Partner Activity) Energy Incentives for United States Virgin Islands Solar Water Heater Rebate Program (U.S. Virgin Islands) Southern States Energy Compact (Multiple...

  13. Verdant-Roosevelt Island Tidal Energy | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Verdant-Roosevelt Island Tidal Energy Jump to: navigation, search Retrieved from "http:en.openei.orgwindex.php?titleVerdant-RooseveltIslandTidalEnergy&oldid680702" ...

  14. Bell Island Space Heating Low Temperature Geothermal Facility...

    OpenEI (Open Energy Information) [EERE & EIA]

    Space Heating Low Temperature Geothermal Facility Jump to: navigation, search Name Bell Island Space Heating Low Temperature Geothermal Facility Facility Bell Island Sector...

  15. Canary Islands Institute of Technology ITC | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Canary Islands Institute of Technology ITC Jump to: navigation, search Name: Canary Islands Institute of Technology (ITC) Place: Las Palmas, Spain Zip: 35119 Product: Las...

  16. Islanded Grid Wind Power Workshop | Department of Energy

    Energy Saver

    The event will provide an opportunity for attendees to learn, network, and share information on wind systems in island and islanded grid environments through expert panel ...

  17. Working Groups Collaborate on U.S. Virgin Islands Clean Energy Vision and Road Map

    Office of Energy Efficiency and Renewable Energy (EERE)

    Energy Transition Initiative: Islands lesson learned detailing work done in the U.S. Virgin Islands.

  18. U.S. Virgin Islands Leadership Embraces Inclusiveness to Ensure Community Ownership of Clean Energy Vision

    Office of Energy Efficiency and Renewable Energy (EERE)

    Energy Transition Initiative: Islands lesson learned detailing work done in the U.S. Virgin Islands.

  19. U.S. Virgin Islands Establishes Interconnection Standards to Clear the Way for Grid Interconnection

    Energy.gov [DOE]

    Energy Transition Initiative: Islands lesson learned detailing work done in the U.S. Virgin Islands.

  20. U.S. Virgin Islands Clears the Way for Unprecedented Levels of Solar Energy

    Energy.gov [DOE]

    Energy Transition Initiative: Islands lesson learned detailing work done in the U.S. Virgin Islands.

  1. Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding

    SciTech Connect

    Tanabe, K.; Aiken, D. J.; Wanlass, M. W.; Morral, A. F.; Atwater, H. A.

    2006-01-01

    Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, while metamorphic growth inevitably results in less design flexibility and lower material quality than is desirable. The first direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs two-junction solar cell, is reported and demonstrates viability of direct wafer bonding for solar cell applications. The tandem cell open-circuit voltage was approximately the sum of the subcell open-circuit voltages. This achievement shows direct bonding enables us to construct lattice-mismatched III-V multijunction solar cells and is extensible to an ultrahigh efficiency InGaP/GaAs/InGaAsP/InGaAs four-junction cell by bonding a GaAs-based lattice-matched InGaP/GaAs subcell and an InP-based lattice-matched InGaAsP/InGaAs subcell. The interfacial resistance experimentally obtained for bonded GaAs/InP smaller than 0.10 Ohm-cm{sup 2} would result in a negligible decrease in overall cell efficiency of {approx}0.02%, under 1-sun illumination.

  2. Composition profiling of GaAs/AlGaAs quantum dots grown by droplet epitaxy

    SciTech Connect

    Bocquel, J.; Koenraad, P. M.; Giddings, A. D.; Prosa, T. J.; Larson, D. J.; Mano, T.

    2014-10-13

    Droplet epitaxy (DE) is a growth method which can create III-V quantum dots (QDs) whose optoelectronic properties can be accurately controlled through the crystallisation conditions. In this work, GaAs/AlGaAs DE-QDs have been analyzed with the complimentary techniques of cross-sectional scanning tunneling microscopy and atom probe tomography. Structural details and a quantitative chemical analysis of QDs of different sizes are obtained. Most QDs were found to be pure GaAs, while a small proportion exhibited high intermixing caused by a local etching process. Large QDs with a high aspect ratio were observed to have an Al-rich crown above the GaAs QD. This structure is attributed to differences in mobility of the cations during the capping phase of the DE growth.

  3. High-field quasi-ballistic transport in AlGaN/GaN heterostructures

    SciTech Connect

    Danilchenko, B. A.; Tripachko, N. A.; Belyaev, A. E.; Vitusevich, S. A. Hardtdegen, H.; Lth, H.

    2014-02-17

    Mechanisms of electron transport formation in 2D conducting channels of AlGaN/GaN heterostructures in extremely high electric fields at 4.2?K have been studied. Devices with a narrow constriction for the current flow demonstrate high-speed electron transport with an electron velocity of 6.8??10{sup 7}?cm/s. Such a velocity is more than two times higher than values reported for conventional semiconductors and about 15% smaller than the limit value predicted for GaN. Superior velocity is attained in the channel with considerable carrier reduction. The effect is related to a carrier runaway phenomenon. The results are in good agreement with theoretical predictions for GaN-based materials.

  4. AlGaAs/GaAs photovoltaic converters for high power narrowband radiation

    SciTech Connect

    Khvostikov, Vladimir; Kalyuzhnyy, Nikolay; Mintairov, Sergey; Potapovich, Nataliia; Shvarts, Maxim; Sorokina, Svetlana; Andreev, Viacheslav; Luque, Antonio

    2014-09-26

    AlGaAs/GaAs-based laser power PV converters intended for operation with high-power (up to 100 W/cm{sup 2}) radiation were fabricated by LPE and MOCVD techniques. Monochromatic (? = 809 nm) conversion efficiency up to 60% was measured at cells with back surface field and low (x = 0.2) Al concentration 'window'. Modules with a voltage of 4 V and the efficiency of 56% were designed and fabricated.

  5. Sheet resistance under Ohmic contacts to AlGaN/GaN heterostructures

    SciTech Connect

    Hajłasz, M.; Donkers, J. J. T. M.; Sque, S. J.; Heil, S. B. S.; Gravesteijn, D. J.; Rietveld, F. J. R.; Schmitz, J.

    2014-06-16

    For the determination of specific contact resistance in semiconductor devices, it is usually assumed that the sheet resistance under the contact is identical to that between the contacts. This generally does not hold for contacts to AlGaN/GaN structures, where an effective doping under the contact is thought to come from reactions between the contact metals and the AlGaN/GaN. As a consequence, conventional extraction of the specific contact resistance and transfer length leads to erroneous results. In this Letter, the sheet resistance under gold-free Ti/Al-based Ohmic contacts to AlGaN/GaN heterostructures on Si substrates has been investigated by means of electrical measurements, transmission electron microscopy, and technology computer-aided design simulations. It was found to be significantly lower than that outside of the contact area; temperature-dependent electrical characterization showed that it exhibits semiconductor-like behavior. The increase in conduction is attributed to n-type activity of nitrogen vacancies in the AlGaN. They are thought to form during rapid thermal annealing of the metal stack when Ti extracts nitrogen from the underlying semiconductor. The high n-type doping in the region between the metal and the 2-dimensional electron gas pulls the conduction band towards the Fermi level and enhances horizontal electron transport in the AlGaN. Using this improved understanding of the properties of the material underneath the contact, accurate values of transfer length and specific contact resistance have been extracted.

  6. On-sun concentrator performance of GaInP/GaAs tandem cells

    SciTech Connect

    Friedman, D.J.; Kurtz, S.R.; Sinha, K.; McMahon, W.E.; Olson, J.M.

    1996-05-01

    The GaInP/GaAs concentrator device has been adapted for and tested in a prototype {open_quotes}real-world{close_quotes} concentrator power system. The device achieved an on-sun efficiency of 28% {+-} 1% in the range of approximately 200-260 suns with device operating temperatures of 38{degrees}C to 42{degrees}C. The authors discuss ways of further improving this performance for future devices.

  7. Properties of (Ga,Mn)As codoped with Li

    SciTech Connect

    Miyakozawa, Shohei; Chen, Lin; Matsukura, Fumihiro; Ohno, Hideo

    2014-06-02

    We grow Li codoped (Ga,Mn)As layers with nominal Mn composition up to 0.15 by molecular beam epitaxy. The layers before and after annealing are characterized by x-ray diffraction, transport, magnetization, and ferromagnetic resonance measurements. The codoping with Li reduces the lattice constant and electrical resistivity of (Ga,Mn)As after annealing. We find that (Ga,Mn)As:Li takes similar Curie temperature to that of (Ga,Mn)As, but with pronounced magnetic moments and in-plane magnetic anisotropy, indicating that the Li codoping has nontrivial effects on the magnetic properties of (Ga,Mn)As.

  8. Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure

    SciTech Connect

    Chowdhury, S; Mishra, UK

    2013-10-01

    Power conversion losses are endemic in all areas of electricity consumption, including motion control, lighting, air conditioning, and information technology. Si, the workhorse of the industry, has reached its material limits. Increasingly, the lateral AlGaN/GaN HEMT based on gallium nitride (GaN-on-Si) is becoming the device of choice for medium power electronics as it enables high-power conversion efficiency and reduced form factor at attractive pricing for wide market penetration. The reduced form factor enabled by high-efficiency operation at high frequency further enables significant system price reduction because of savings in bulky extensive passive elements and heat sink costs. The high-power market, however, still remains unaddressed by lateral GaN devices. The current and voltage demand for high power conversion application makes the chip area in a lateral topology so large that it becomes more difficult to manufacture. Vertical GaN devices would play a big role alongside of silicon carbide (SiC) to address the high power conversion needs. In this paper, the development, performance, and status of lateral and vertical GaN devices are discussed.

  9. GaNPAs Solar Cells Lattice-Matched To GaP: Preprint

    SciTech Connect

    Geisz, J. F.; Friedman, D. J.; Kurtz, S.

    2002-05-01

    This conference paper describes the III-V semiconductors grown on silicon substrates are very attractive for lower-cost, high-efficiency multijunction solar cells, but lattice-mismatched alloys that result in high dislocation densities have been unable to achieve satisfactory performance. GaNxP1-x-yAsy is a direct-gap III-V alloy that can be grown lattice-matched to Si when y= 4.7x - 0.1. We propose the use of lattice-matched GaNPAs on silicon for high-efficiency multijunction solar cells. We have grown GaNxP1-x-yAsy on GaP (with a similar lattice constant to silicon) by metal-organic chemical vapor phase epitaxy with direct band-gaps in the range of 1.5 to 2.0 eV. We demonstrate the performance of single-junction GaNxP1-x-yAsy solar cells grown on GaP substrates and discuss the prospects for the development of monolithic high-efficiency multijunction solar cells based on silicon substrates.

  10. Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence

    SciTech Connect

    Ji, Hai-Ming; Liang, Baolai Simmonds, Paul J.; Juang, Bor-Chau; Yang, Tao; Young, Robert J.; Huffaker, Diana L.

    2015-03-09

    We investigate the photoluminescence (PL) properties of a hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot (QD) structure grown in a GaAs matrix by molecular beam epitaxy. This hybrid QD structure exhibits more intense PL with a broader spectral range, compared with control samples that contain only InAs or GaSb QDs. This enhanced PL performance is attributed to additional electron and hole injection from the type-I InAs QDs into the adjacent type-II GaSb QDs. We confirm this mechanism using time-resolved and power-dependent PL. These hybrid QD structures show potential for high efficiency QD solar cell applications.

  11. Reactive codoping of GaAlInP compound semiconductors

    DOEpatents

    Hanna, Mark Cooper; Reedy, Robert

    2008-02-12

    A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

  12. Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells

    SciTech Connect

    Paquette, B.; DeVita, M.; Turala, A.; Kolhatkar, G.; Boucherif, A.; Jaouad, A.; Aimez, V.; Ars, R.; Wilkins, M.; Wheeldon, J. F.; Walker, A. W.; Hinzer, K.; Fafard, S.

    2013-09-27

    AlGaAs/GaAs tunnel junctions for use in high concentration multijunction solar cells were designed and grown by chemical beam epitaxy (CBE) using trimethyl aluminium (TMA) as the p-dopant source for the AlGaAs active layer. Controlled hole concentration up to 4?10{sup 20} cm{sup ?3} was achieved through variation in growth parameters. Fabricated tunnel junctions have a peak tunneling current up to 6140 A/cm{sup 2}. These are suitable for high concentration use and outperform GaAs/GaAs tunnel junctions.

  13. Study of the effects of GaN buffer layer quality on the dc characteristics of AlGaN/GaN high electron mobility transistors

    DOE PAGES [OSTI]

    Ahn, Shihyun; Zhu, Weidi; Dong, Chen; Le, Lingcong; Hwang, Ya-Hsi; Kim, Byung-Jae; Ren, Fan; Pearton, Stephen J.; Lind, Aaron G.; Jones, Kevin S.; et al

    2015-04-21

    Here we studied the effect of buffer layer quality on dc characteristics of AlGaN/GaN high electron mobility (HEMTs). AlGaN/GaN HEMT structures with 2 and 5 μm GaN buffer layers on sapphire substrates from two different vendors with the same Al concentration of AlGaN were used. The defect densities of HEMT structures with 2 and 5 μm GaN buffer layer were 7 × 109 and 5 × 108 cm₋2, respectively, as measured by transmission electron microscopy. There was little difference in drain saturation current or in transfer characteristics in HEMTs on these two types of buffer. However, there was no dispersionmore » observed on the nonpassivated HEMTs with 5 μm GaN buffer layer for gate-lag pulsed measurement at 100 kHz, which was in sharp contrast to the 71% drain current reduction for the HEMT with 2 μm GaN buffer layer.« less

  14. Study of the effects of GaN buffer layer quality on the dc characteristics of AlGaN/GaN high electron mobility transistors

    SciTech Connect

    Ahn, Shihyun; Zhu, Weidi; Dong, Chen; Le, Lingcong; Hwang, Ya-Hsi; Kim, Byung-Jae; Ren, Fan; Pearton, Stephen J.; Lind, Aaron G.; Jones, Kevin S.; Kravchenko, I. I.; Zhang, Ming-Lan

    2015-04-21

    Here we studied the effect of buffer layer quality on dc characteristics of AlGaN/GaN high electron mobility (HEMTs). AlGaN/GaN HEMT structures with 2 and 5 μm GaN buffer layers on sapphire substrates from two different vendors with the same Al concentration of AlGaN were used. The defect densities of HEMT structures with 2 and 5 μm GaN buffer layer were 7 × 109 and 5 × 108 cm₋2, respectively, as measured by transmission electron microscopy. There was little difference in drain saturation current or in transfer characteristics in HEMTs on these two types of buffer. However, there was no dispersion observed on the nonpassivated HEMTs with 5 μm GaN buffer layer for gate-lag pulsed measurement at 100 kHz, which was in sharp contrast to the 71% drain current reduction for the HEMT with 2 μm GaN buffer layer.

  15. Integrating AlGaN/GaN high electron mobility transistor with Si: A comparative study of integration schemes

    SciTech Connect

    Mohan, Nagaboopathy; Raghavan, Srinivasan; Manikant,; Soman, Rohith

    2015-10-07

    AlGaN/GaN high electron mobility transistor stacks deposited on a single growth platform are used to compare the most common transition, AlN to GaN, schemes used for integrating GaN with Si. The efficiency of these transitions based on linearly graded, step graded, interlayer, and superlattice schemes on dislocation density reduction, stress management, surface roughness, and eventually mobility of the 2D-gas are evaluated. In a 500 nm GaN probe layer deposited, all of these transitions result in total transmission electron microscopy measured dislocations densities of 1 to 3 × 10{sup 9}/cm{sup 2} and <1 nm surface roughness. The 2-D electron gas channels formed at an AlGaN-1 nm AlN/GaN interface deposited on this GaN probe layer all have mobilities of 1600–1900 cm{sup 2}/V s at a carrier concentration of 0.7–0.9 × 10{sup 13}/cm{sup 2}. Compressive stress and changes in composition in GaN rich regions of the AlN-GaN transition are the most effective at reducing dislocation density. Amongst all the transitions studied the step graded transition is the one that helps to implement this feature of GaN integration in the simplest and most consistent manner.

  16. Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors

    SciTech Connect

    Yang, Jie Cui, Sharon; Ma, T. P.; Hung, Ting-Hsiang; Nath, Digbijoy; Krishnamoorthy, Sriram; Rajan, Siddharth

    2013-11-25

    We investigate the energy levels of electron traps in AlGaN/GaN high electron mobility transistors by the use of electron tunneling spectroscopy. Detailed analysis of a typical spectrum, obtained in a wide gate bias range and with both bias polarities, suggests the existence of electron traps both in the bulk of AlGaN and at the AlGaN/GaN interface. The energy levels of the electron traps have been determined to lie within a 0.5?eV band below the conduction band minimum of AlGaN, and there is strong evidence suggesting that these traps contribute to Frenkel-Poole conduction through the AlGaN barrier.

  17. Analysis of defects in GaAsN grown by chemical beam epitaxy on high index GaAs substrates

    SciTech Connect

    Bouzazi, Boussairi; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi

    2013-09-27

    The lattice defects in GaAsN grown by chemical beam epitaxy on GaAs 311B and GaAs 10A toward [110] were characterized and discussed by using deep level transient spectroscopy (DLTS) and on the basis of temperature dependence of the junction capacitances (C{sub J}). In one hand, GaAsN films grown on GaAs 311B and GaAs 10A showed n-type and p-type conductivities, respectively although the similar and simultaneous growth conditions. This result is indeed in contrast to the common known effect of N concentration on the type of conductivity, since the surface 311B showed a significant improvement in the incorporation of N. Furthermore, the temperature dependence of C{sub J} has shown that GaAs 311B limits the formation of N-H defects. In the other hand, the energy states in the forbidden gap of GaAsN were obtained. Six electron traps, E1 to E6, were observed in the DLTS spectrum of GaAsN grown on GaAs 311B, with apparent activation energies of 0.02, 0.14, 0.16, 0.33, 0.48, and 0.74 eV below the bottom edge of the conduction band, respectively. In addition, four hole traps, H1 to H4, were observed in the DLTS spectrum of GaAsN grown on GaAs 10A, with energy depths of 0.13, 0.20, 0.39, and 0.52 eV above the valence band maximum of the alloy, respectively. Hence, the surface morphology of the GaAs substrate was found to play a key factor role in clarifying the electrical properties of GaAsN grown by CBE.

  18. March 28, 1979: Three Mile Island | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    8, 1979: Three Mile Island March 28, 1979: Three Mile Island March 28, 1979: Three Mile Island March 28, 1979 A partial meltdown of the core occurs at one of the two reactors at the Three Mile Island nuclear power plant near Harrisburg, Pennsylvania

  19. Refractive index of erbium doped GaN thin films

    SciTech Connect

    Alajlouni, S.; Sun, Z. Y.; Li, J.; Lin, J. Y.; Jiang, H. X.; Zavada, J. M.

    2014-08-25

    GaN is an excellent host for erbium (Er) to provide optical emission in the technologically important as well as eye-safe 1540 nm wavelength window. Er doped GaN (GaN:Er) epilayers were synthesized on c-plane sapphire substrates using metal organic chemical vapor deposition. By employing a pulsed growth scheme, the crystalline quality of GaN:Er epilayers was significantly improved over those obtained by conventional growth method of continuous flow of reaction precursors. X-ray diffraction rocking curve linewidths of less than 300 arc sec were achieved for the GaN (0002) diffraction peak, which is comparable to the typical results of undoped high quality GaN epilayers and represents a major improvement over previously reported results for GaN:Er. Spectroscopic ellipsometry was used to determine the refractive index of the GaN:Er epilayers in the 1540 nm wavelength window and a linear dependence on Er concentration was found. The observed refractive index increase with Er incorporation and the improved crystalline quality of the GaN:Er epilayers indicate that low loss GaN:Er optical waveguiding structures are feasible.

  20. Long Island Smart Energy Corridor

    SciTech Connect

    Mui, Ming

    2015-02-04

    The Long Island Power Authority (LIPA) has teamed with Stony Brook University (Stony Brook or SBU) and Farmingdale State College (Farmingdale or FSC), two branches of the State University of New York (SUNY), to create a “Smart Energy Corridor.” The project, located along the Route 110 business corridor on Long Island, New York, demonstrated the integration of a suite of Smart Grid technologies from substations to end-use loads. The Smart Energy Corridor Project included the following key features: -TECHNOLOGY: Demonstrated a full range of smart energy technologies, including substations and distribution feeder automation, fiber and radio communications backbone, advanced metering infrastructure (AM”), meter data management (MDM) system (which LIPA implemented outside of this project), field tools automation, customer-level energy management including automated energy management systems, and integration with distributed generation and plug-in hybrid electric vehicles. -MARKETING: A rigorous market test that identified customer response to an alternative time-of-use pricing plan and varying levels of information and analytical support. -CYBER SECURITY: Tested cyber security vulnerabilities in Smart Grid hardware, network, and application layers. Developed recommendations for policies, procedures, and technical controls to prevent or foil cyber-attacks and to harden the Smart Grid infrastructure. -RELIABILITY: Leveraged new Smart Grid-enabled data to increase system efficiency and reliability. Developed enhanced load forecasting, phase balancing, and voltage control techniques designed to work hand-in-hand with the Smart Grid technologies. -OUTREACH: Implemented public outreach and educational initiatives that were linked directly to the demonstration of Smart Grid technologies, tools, techniques, and system configurations. This included creation of full-scale operating models demonstrating application of Smart Grid technologies in business and residential

  1. Rhode Island Renewable Energy Fund (RIREF)

    Office of Energy Efficiency and Renewable Energy (EERE)

    Rhode Island's PBF is supported by a surcharge on electric and gas customers' bills. Initially, the surcharge was was set at $0.0023 per kilowatt-hour (2.3 mills per kWh) and applied only to...

  2. U.S. Virgin Islands- Net Metering

    Energy.gov [DOE]

    In February 2007, the U.S. Virgin Islands Public Services Commission approved a limited net-metering program for residential and commercial photovoltaic (PV), wind-energy or other renewable energ...

  3. Solomon Islands: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Country Profile Name Solomon Islands Population 523,000 GDP 840,000,000 Energy Consumption 0.00 Quadrillion Btu 2-letter ISO code SB 3-letter ISO code SLB Numeric ISO...

  4. Faroe Islands: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Country Profile Name Faroe Islands Population 48,351 GDP 2,450,000,000 Energy Consumption 0.01 Quadrillion Btu 2-letter ISO code FO 3-letter ISO code FRO Numeric ISO...

  5. Aleutian Pribilof Islands Association- 2005 Project

    Energy.gov [DOE]

    The Aleutian Pribilof Islands Association (APIA) was chartered as a nonprofit organization in 1976 and is a federally recognized tribal organization of the Aleut people. APIA will conduct an...

  6. Community Redevelopment Case Study: Jekyll Island

    Energy.gov [DOE]

    Presentation—given at the April 2012 Federal Utility Partnership Working Group (FUPWG) meeting—features photos from a case study about Jekyll Island's community redevelopment project in Georgia.

  7. N. Mariana Islands- Renewables Portfolio Standard

    Office of Energy Efficiency and Renewable Energy (EERE)

    The Commonwealth of the Northern Mariana Islands enacted its Renewables Portfolio Standard in September 2007, in which a certain percentage of its net electricity sales must come from renewable e...

  8. Categorical Exclusion Determinations: Rhode Island | Department...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    The New England Solar cost-Reduction Challenge Partnership CX(s) Applied: A9, A11 Date: 08152013 Location(s): Vermont, New Hampshire, Rhode Island, Massachusetts, Connecticut ...

  9. Alternative Fuels Data Center: Rhode Island EV Initiative Adds Chargers

    Alternative Fuels and Advanced Vehicles Data Center

    Across the State Rhode Island EV Initiative Adds Chargers Across the State to someone by E-mail Share Alternative Fuels Data Center: Rhode Island EV Initiative Adds Chargers Across the State on Facebook Tweet about Alternative Fuels Data Center: Rhode Island EV Initiative Adds Chargers Across the State on Twitter Bookmark Alternative Fuels Data Center: Rhode Island EV Initiative Adds Chargers Across the State on Google Bookmark Alternative Fuels Data Center: Rhode Island EV Initiative Adds

  10. Celebrating Asian American Pacific Islander Heritage Month at the Energy

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Department | Department of Energy Celebrating Asian American Pacific Islander Heritage Month at the Energy Department Celebrating Asian American Pacific Islander Heritage Month at the Energy Department May 1, 2014 - 4:22pm Addthis Celebrating Asian American Pacific Islander Heritage Month at the Energy Department Each May we celebrate Asian American and Pacific Islander Heritage Month, honoring the accomplishments of Asian Americans, Native Hawaiians, and Pacific Islanders at the Energy

  11. EERE Success Story-Rhode Island Schools Teach Energy Essentials |

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Department of Energy Rhode Island Schools Teach Energy Essentials EERE Success Story-Rhode Island Schools Teach Energy Essentials December 10, 2015 - 11:24am Addthis Students participating in the NEED Project at Scituate High and Calcutt Middle Schools planted 14 trees in Central Falls, Rhode Island. Photo Courtesy | Rhode Island Public Schools Students participating in the NEED Project at Scituate High and Calcutt Middle Schools planted 14 trees in Central Falls, Rhode Island. Photo

  12. Rhode Island Recovery Act State Memo | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Rhode Island Recovery Act State Memo Rhode Island Recovery Act State Memo Rhode Island has substantial natural resources, including wind and biomass. The American Recovery & Reinvestment Act (ARRA) is making a meaningful down payment on the nation's energy and environmental future. The Recovery Act investments in Rhode Island are supporting a broad range of clean energy projects, from weatherization to smart grid workforce training. Through these investments, Rhode Island's businesses,

  13. Interconnecting gold islands with DNA origami

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Interconnecting gold islands with DNA origami Authors: Ding, B., Wu, H., Xu, W., Zhao, Z., Liu, Y., Yu, H., and Yan, H. Title: Interconnecting gold islands with DNA origami Source: Nano Lett. Year: 2010 Volume: 10 Pages: 5065-5069 ABSTRACT: Scaffolded DNA origami has recently emerged as a versatile, programmable method to fold DNA into arbitrarily shaped nanostructures that are spatially addressable, with sub-10-nm resolution. Toward functional DNA nanotechnology, one of the key challenges is to

  14. 0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell

    SciTech Connect

    Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

    2006-01-01

    We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga{sub 0.5}In{sub 0.5} P/GaAs/Ga{sub 0.75}In{sub 0.25}As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga{sub 0.75}In{sub 0.25}As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap Ga{sub x}In{sub 1-x}As fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the Ga{sub x}In{sub 1-x}As fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

  15. Ab initio study of Ga-GaN system: Transition from adsorbed metal atoms to a metal–semiconductor junction

    SciTech Connect

    Witczak, Przemysław; Kempisty, Pawel; Strak, Pawel

    2015-11-15

    Ab initio studies of a GaN(0001)-Ga system with various thicknesses of a metallic Ga layer were undertaken. The studied systems extend from a GaN(0001) surface with a fractional coverage of gallium atoms to a Ga-GaN metal–semiconductor (m–s) contact. Electronic properties of the system are simulated using density functional theory calculations for different doping of the bulk semiconductor. It is shown that during transition from a bare GaN(0001) surface to a m–s heterostructure, the Fermi level stays pinned at a Ga-broken bond highly dispersive surface state to Ga–Ga states at the m–s interface. Adsorption of gallium leads to an energy gain of about 4 eV for a clean GaN(0001) surface and the energy decreases to 3.2 eV for a thickly Ga-covered surface. The transition to the m–s interface is observed. For a thick Ga overlayer such interface corresponds to a Schottky contact with a barrier equal to 0.9 and 0.6 eV for n- and p-type, respectively. Bond polarization-related dipole layer occurring due to an electron transfer to the metal leads to a potential energy jump of 1.5 eV, independent on the semiconductor doping. Additionally high electron density in the Ga–Ga bond region leads to an energy barrier about 1.2 eV high and 4 Å wide. This feature may adversely affect the conductivity of the n-type m–s system.

  16. Price of Everett, MA Liquefied Natural Gas Total Imports (Dollars...

    Gasoline and Diesel Fuel Update

    Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2014 8.68 11.01 9.05 5.99 6.95 9.17 6.56 5.75 5.34 8.91 2015 13.53 10.90 10.29 5.98 6.24 4.51 3.66 4.56 6.25...

  17. Price of Everett, MA Liquefied Natural Gas Total Imports (Dollars...

    Energy Information Administration (EIA) (indexed site)

    Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 2000's 4.41 5.16 6.65 7.58 7.32 10.33 5.87 2010's 4.79 4.77 3.70 5.49 8.00...

  18. EVERETT L. REDMOND II Senior Director, Policy Development

    Energy Saver

    of Excess Uranium on Domestic Uranium Mining, Conversion, and Enrichment Industries; ... of excess uranium on the domestic uranium mining, conversion, and enrichment industries. ...

  19. Distributed bragg reflector using AIGaN/GaN

    DOEpatents

    Waldrip, Karen E.; Lee, Stephen R.; Han, Jung

    2004-08-10

    A supported distributed Bragg reflector or superlattice structure formed from a substrate, a nucleation layer deposited on the substrate, and an interlayer deposited on the nucleation layer, followed by deposition of (Al,Ga,B)N layers or multiple pairs of (Al,Ga,B)N/(Al,Ga,B)N layers, where the interlayer is a material selected from AlN, Al.sub.x Ga.sub.1-x N, and AlBN with a thickness of approximately 20 to 1000 angstroms. The interlayer functions to reduce or eliminate the initial tensile growth stress, thereby reducing cracking in the structure. Multiple interlayers utilized in an AlGaN/GaN DBR structure can eliminate cracking and produce a structure with a reflectivity value greater than 0.99.

  20. Efficiency enhancement of InGaN/GaN solar cells with nanostructures

    SciTech Connect

    Bai, J.; Yang, C. C.; Athanasiou, M.; Wang, T.

    2014-02-03

    We demonstrate InGaN/GaN multi-quantum-well solar cells with nanostructures operating at a wavelength of 520?nm. Nanostructures with a periodic nanorod or nanohole array are fabricated by means of modified nanosphere lithography. Under 1 sun air-mass 1.5 global spectrum illumination, a fill factor of 50 and an open circuit voltage of 1.9?V are achieved in spite of very high indium content in InGaN alloys usually causing degradation of crystal quality. Both the nanorod array and the nanohole array significantly improve the performance of solar cells, while a larger enhancement is observed for the nanohole array, where the conversion efficiency is enhanced by 51%.

  1. Raman spectroscopy of InGaAs/GaAs nanoheterostructures δ-doped with Mn

    SciTech Connect

    Plankina, S. M.; Vikhrova, O. V.; Danilov, Yu. A.; Zvonkov, B. N.; Kalentyeva, I. L.; Nezhdanov, A. V.; Chunin, I. I.; Yunin, P. A.

    2015-01-15

    The results of complex studies of InGaAs/GaAs nanoheterostructures δ-doped with Mn are reported. The structures are grown by metal-organic vapor-phase epitaxy in combination with laser deposition. By confocal Raman spectroscopy, it is shown that the low-temperature δ-doped GaAs cap layers are of higher crystal quality compared to uniformly doped layers. Scattering of light in the coupled phonon-plasmon mode is observed. The appearance of this mode is conditioned by the diffusion of manganese from the δ-layer. The thickness of the cap layer is found to be d{sub c} ≈ 9–20 nm, optimal for attainment of the highest photoluminescence intensity of the quantum well and the highest layer concentration of holes by doping with manganese.

  2. Electrical compensation by Ga vacancies in Ga{sub 2}O{sub 3} thin films

    SciTech Connect

    Korhonen, E.; Tuomisto, F.; Gogova, D.; Wagner, G.; Baldini, M.; Galazka, Z.; Schewski, R.; Albrecht, M.

    2015-06-15

    The authors have applied positron annihilation spectroscopy to study the vacancy defects in undoped and Si-doped Ga{sub 2}O{sub 3} thin films. The results show that Ga vacancies are formed efficiently during metal-organic vapor phase epitaxy growth of Ga{sub 2}O{sub 3} thin films. Their concentrations are high enough to fully account for the electrical compensation of Si doping. This is in clear contrast to another n-type transparent semiconducting oxide In{sub 2}O{sub 3}, where recent results show that n-type conductivity is not limited by cation vacancies but by other intrinsic defects such as O{sub i}.

  3. Graphene in ohmic contact for both n-GaN and p-GaN

    SciTech Connect

    Zhong, Haijian; Liu, Zhenghui; Shi, Lin; Xu, Gengzhao; Fan, Yingmin; Huang, Zengli; Wang, Jianfeng; Ren, Guoqiang; Xu, Ke

    2014-05-26

    The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. The local IV results show that some of the graphene wrinkles act as high-conductive channels and exhibiting ohmic behaviors compared with the flat regions with Schottky characteristics. We have studied the effects of the graphene wrinkles using density-functional-theory calculations. It is found that the standing and folded wrinkles with zigzag or armchair directions have a tendency to decrease or increase the local work function, respectively, pushing the local Fermi level towards n- or p-type GaN and thus improving the transport properties. These results can benefit recent topical researches and applications for graphene as electrode material integrated in various semiconductor devices.

  4. A InGaN/GaN quantum dot green ({lambda}=524 nm) laser

    SciTech Connect

    Zhang Meng; Banerjee, Animesh; Lee, Chi-Sen; Hinckley, John M.; Bhattacharya, Pallab

    2011-05-30

    The characteristics of self-organized InGaN/GaN quantum dot lasers are reported. The laser heterostructures were grown on c-plane GaN substrates by plasma-assisted molecular beam epitaxy and the laser facets were formed by focused ion beam etching with gallium. Emission above threshold is characterized by a peak at 524 nm (green) and linewidth of 0.7 nm. The lowest measured threshold current density is 1.2 kA/cm{sup 2} at 278 K. The slope and wall plug efficiencies are 0.74 W/A and {approx}1.1%, respectively, at 1.3 kA/cm{sup 2}. The value of T{sub 0}=233 K in the temperature range of 260-300 K.

  5. Photocapacitance study of type-II GaSb/GaAs quantum ring solar cells

    SciTech Connect

    Wagener, M. C.; Botha, J. R.; Carrington, P. J.; Krier, A.

    2014-01-07

    In this study, the density of states associated with the localization of holes in GaSb/GaAs quantum rings are determined by the energy selective charging of the quantum ring distribution. The authors show, using conventional photocapacitance measurements, that the excess charge accumulated within the type-II nanostructures increases with increasing excitation energies for photon energies above 0.9?eV. Optical excitation between the localized hole states and the conduction band is therefore not limited to the ?(k?=?0) point, with pseudo-monochromatic light charging all states lying within the photon energy selected. The energy distribution of the quantum ring states could consequently be accurately related from the excitation dependence of the integrated photocapacitance. The resulting band of localized hole states is shown to be well described by a narrow distribution centered 407?meV above the GaAs valence band maximum.

  6. Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots

    SciTech Connect

    Braun, T.; Schneider, C.; Maier, S.; Forchel, A.; Höfling, S.; Kamp, M.; Igusa, R.; Iwamoto, S.; Arakawa, Y.

    2014-09-15

    In this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence on single quantum dots with large pitches.

  7. Photoluminescence studies of individual and few GaSb/GaAs quantum rings

    SciTech Connect

    Young, M. P.; Woodhead, C. S.; Roberts, J.; Noori, Y. J.; Noble, M. T.; Krier, A.; Hayne, M.; Young, R. J.; Smakman, E. P.; Koenraad, P. M.

    2014-11-15

    We present optical studies of individual and few GaSb quantum rings embedded in a GaAs matrix. Contrary to expectation for type-II confinement, we measure rich spectra containing sharp lines. These lines originate from excitonic recombination and are observed to have resolution-limited full-width at half maximum of 200 ?eV. The detail provided by these measurements allows the characteristic type-II blueshift, observed with increasing excitation power, to be studied at the level of individual nanostructures. These findings are in agreement with hole-charging being the origin of the observed blueshift.

  8. Application of the ASME code in the design of the GA-4 and GA-9 casks

    SciTech Connect

    Mings, W.J. ); Koploy, M.A. )

    1992-01-01

    General Atomics (GA) is developing two spent fuel shipping casks for transport by legal weight truck (LWT). The casks are designed to the loading, environmental conditions and safety requirements defined in Title 10 of the Code of Federal Regulations, Part 71 (10CFR71). To ensure that all components of the cask meet the 10CFR71 rules, GA established structural design criteria for each component based on NRC Regulatory Guides and the American Society of Mechanical Engineers Boiler and Pressure Vessel Code (ASME Code). This paper discusses the criteria used for different cask components, how they were applied and the conservatism and safety margins built into the criteria and assumption.

  9. Application of the ASME code in the design of the GA-4 and GA-9 casks

    SciTech Connect

    Mings, W.J.; Koploy, M.A.

    1992-08-01

    General Atomics (GA) is developing two spent fuel shipping casks for transport by legal weight truck (LWT). The casks are designed to the loading, environmental conditions and safety requirements defined in Title 10 of the Code of Federal Regulations, Part 71 (10CFR71). To ensure that all components of the cask meet the 10CFR71 rules, GA established structural design criteria for each component based on NRC Regulatory Guides and the American Society of Mechanical Engineers Boiler and Pressure Vessel Code (ASME Code). This paper discusses the criteria used for different cask components, how they were applied and the conservatism and safety margins built into the criteria and assumption.

  10. Origins of ion irradiation-induced Ga nanoparticle motion on GaAs surfaces

    SciTech Connect

    Kang, M.; Wu, J. H.; Chen, H. Y.; Thornton, K.; Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Sofferman, D. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Adelphi University, Garden City, New York 11530-0701 (United States); Beskin, I. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)

    2013-08-12

    We have examined the origins of ion irradiation-induced nanoparticle (NP) motion. Focused-ion-beam irradiation of GaAs surfaces induces random walks of Ga NPs, which are biased in the direction opposite to that of ion beam scanning. Although the instantaneous NP velocities are constant, the NP drift velocities are dependent on the off-normal irradiation angle, likely due to a difference in surface non-stoichiometry induced by the irradiation angle dependence of the sputtering yield. It is hypothesized that the random walks are initiated by ion irradiation-induced thermal fluctuations, with biasing driven by anisotropic mass transport.

  11. Inverse spin Hall effect in Pt/(Ga,Mn)As

    SciTech Connect

    Nakayama, H.; Chen, L.; Chang, H. W.; Ohno, H.; Matsukura, F.

    2015-06-01

    We investigate dc voltages under ferromagnetic resonance in a Pt/(Ga,Mn)As bilayer structure. A part of the observed dc voltage is shown to originate from the inverse spin Hall effect. The sign of the inverse spin Hall voltage is the same as that in Py/Pt bilayer structure, even though the stacking order of ferromagnetic and nonmagnetic layers is opposite to each other. The spin mixing conductance at the Pt/(Ga,Mn)As interface is determined to be of the order of 10{sup 19 }m{sup −2}, which is about ten times greater than that of (Ga,Mn)As/p-GaAs.

  12. fe0013961-GaTech | netl.doe.gov

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Performer Georgia Tech Research Corporation, Atlanta GA 30332 Background While earlier research focused on the properties of the hydrate mass per se (Sloan Jr and Koh 2007), ...

  13. Bismuth alloying properties in GaAs nanowires

    SciTech Connect

    Ding, Lu; Lu, Pengfei; Cao, Huawei; Cai, Ningning; Yu, Zhongyuan; Gao, Tao; Wang, Shumin

    2013-09-15

    First-principles calculations have been performed to investigate the structural, electronic and optical properties of bismuth alloying in GaAs nanowires. A typical model of Ga{sub 31}As{sub 31} nanowires is introduced for its reasonable band gap. The band gap of GaAs{sub 1−x}Bi{sub x} shrinks clearly with the increasing Bi concentration and the band edge shifts when spin–orbit coupling (SOC) is considered. The insertion of Bi atom leads to hybridization of Ga/As/Bi p states which contributes a lot around Fermi level. Scissor effect is involved. The optical properties are presented, including dielectric function, optical absorption spectra and reflectivity, which are also varied with the increasing of Bi concentrations. - Graphical abstract: Top view of Bi-doped GaAs nanowires. Ga, As, and Bi atoms are denoted with grey, purple and red balls, respectively. Display Omitted - Highlights: • A typical model of Ga{sub 31}As{sub 31} nanowires is introduced for its reasonable band gap. • The band gap of GaAs{sub 1−x}Bi{sub x} shrinks clearly with the increasing Bi concentration. • The band edge shifts when spin–orbit coupling (SOC) is considered. • The insertion of Bi atom leads to hybridization of Ga/As/Bi p states.

  14. Photoluminescence from GaAs nanodisks fabricated by using combination...

    Office of Scientific and Technical Information (OSTI)

    GaAs nanodisks fabricated by using combination of neutral beam etching and atomic hydrogen-assisted molecular beam epitaxy regrowth Citation Details In-Document Search Title:...

  15. Au impact on GaAs epitaxial growth on GaAs (111){sub B} substrates in molecular beam epitaxy

    SciTech Connect

    Liao, Zhi-Ming; Chen, Zhi-Gang; Xu, Hong-Yi; Guo, Ya-Nan; Sun, Wen; Zhang, Zhi; Yang, Lei; Lu, Zhen-Yu; Chen, Ping-Ping; Lu, Wei; Zou, Jin; Centre for Microscopy and Microanalysis, The University of Queensland, St. Lucia, Queensland 4072

    2013-02-11

    GaAs growth behaviour under the presence of Au nanoparticles on GaAs {l_brace}111{r_brace}{sub B} substrate is investigated using electron microscopy. It has been found that, during annealing, enhanced Ga surface diffusion towards Au nanoparticles leads to the GaAs epitaxial growth into {l_brace}113{r_brace}{sub B} faceted triangular pyramids under Au nanoparticles, governed by the thermodynamic growth, while during conventional GaAs growth, growth kinetics dominates, resulting in the flatted triangular pyramids at high temperature and the epitaxial nanowires growth at relatively low temperature. This study provides an insight of Au nanoparticle impact on GaAs growth, which is critical for understanding the formation mechanisms of semiconductor nanowires.

  16. Deep level defects in n-type GaAsBi and GaAs grown at low temperatures

    SciTech Connect

    Mooney, P. M.; Watkins, K. P.; Jiang, Zenan; Basile, A. F.; Lewis, R. B.; Bahrami-Yekta, V.; Masnadi-Shirazi, M.; Beaton, D. A.; Tiedje, T.

    2013-04-07

    Deep level defects in n-type GaAs{sub 1-x}Bi{sub x} having 0 < x < 0.012 and GaAs grown by molecular beam epitaxy (MBE) at substrate temperatures between 300 and 400 Degree-Sign C have been investigated by Deep Level Capacitance Spectroscopy. Incorporating Bi suppresses the formation of an electron trap with activation energy 0.40 eV, thus reducing the total trap concentration in dilute GaAsBi layers by more than a factor of 20 compared to GaAs grown under the same conditions. We find that the dominant traps in dilute GaAsBi layers are defect complexes involving As{sub Ga}, as expected for MBE growth at these temperatures.

  17. Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains

    SciTech Connect

    Kondratenko, S. V. Vakulenko, O. V.; Mazur, Yu. I. Dorogan, V. G.; Marega, E.; Benamara, M.; Ware, M. E.; Salamo, G. J.

    2014-11-21

    The in-plane photoconductivity and photoluminescence are investigated in quantum dot-chain InGaAs/GaAs heterostructures. Different photoconductivity transients resulting from spectrally selecting photoexcitation of InGaAs QDs, GaAs spacers, or EL2 centers were observed. Persistent photoconductivity was observed at 80?K after excitation of electron-hole pairs due to interband transitions in both the InGaAs QDs and the GaAs matrix. Giant optically induced quenching of in-plane conductivity driven by recharging of EL2 centers is observed in the spectral range from 0.83?eV to 1.0?eV. Conductivity loss under photoexcitation is discussed in terms of carrier localization by analogy with carrier distribution in disordered media.

  18. Reactive codoping of GaAlInP compound semiconductors (Patent...

    Office of Scientific and Technical Information (OSTI)

    Patent: Reactive codoping of GaAlInP compound semiconductors Citation Details In-Document Search Title: Reactive codoping of GaAlInP compound semiconductors A GaAlInP compound ...

  19. Growth and Band Offsets of Epitaxial Lanthanide Oxides on GaN...

    Office of Scientific and Technical Information (OSTI)

    M.T.T., 60 (6) (2012) 3 Jon Ihlefeld, Sandia National Laboratories Electronic Materials ... Undoped GaN Undoped AlGaN Doped AlGaN 2D Electron Gas Enhancement Mode (nominally ...

  20. Long-wavelength shift and enhanced room temperature photoluminescence efficiency in GaAsSb/InGaAs/GaAs-based heterostructures emitting in the spectral range of 1.01.2??m due to increased charge carrier's localization

    SciTech Connect

    Kryzhkov, D. I. Yablonsky, A. N.; Morozov, S. V.; Aleshkin, V. Ya.; Krasilnik, Z. F.; Zvonkov, B. N.; Vikhrova, O. V.

    2014-11-28

    In this work, a study of the photoluminescence (PL) temperature dependence in quantum well GaAs/GaAsSb and double quantum well InGaAs/GaAsSb/GaAs heterostructures grown by metalorganic chemical vapor deposition with different parameters of GaAsSb and InGaAs layers has been performed. It has been demonstrated that in double quantum well InGaAs/GaAsSb/GaAs heterostructures, a significant shift of the PL peak to a longer-wavelength region (up to 1.2??m) and a considerable reduction in the PL thermal quenching in comparison with GaAs/GaAsSb structures can be obtained due to better localization of charge carriers in the double quantum well. For InGaAs/GaAsSb/GaAs heterostructures, an additional channel of radiative recombination with participation of the excited energy states in the quantum well, competing with the main ground-state radiative transition, has been revealed.

  1. An inverted AlGaAs/GaAs patterned-Ge tunnel junction cascade concentrator solar cell

    SciTech Connect

    Venkatasubramanian, R. )

    1993-01-01

    This report describes work to develop inverted-grown Al[sub 0.34]Ga[sub 0.66]As/GaAs cascades. Several significant developments are reported on as follows: (1) The AM1.5 1-sun total-area efficiency of the top Al[sub 0.34]Ga[sub 0.66]As cell for the cascade was improved from 11.3% to 13.2% (NREL measurement [total-area]). (2) The cycled'' organometallic vapor phase epitaxy growth (OMVPE) was studied in detail utilizing a combination of characterization techniques including Hall-data, photoluminescence, and secondary ion mass spectroscopy. (3) A technique called eutectic-metal-bonding (EMB) was developed by strain-free mounting of thin GaAs-AlGaAs films (based on lattice-matched growth on Ge substrates and selective plasma etching of Ge substrates) onto Si carrier substrates. Minority-carrier lifetime in an EMB GaAs double-heterostructure was measured as high as 103 nsec, the highest lifetime report for a freestanding GaAs thin film. (4) A thin-film, inverted-grown GaAs cell with a 1-sun AM1.5 active-area efficiency of 20.3% was obtained. This cell was eutectic-metal-bonded onto Si. (5) A thin-film inverted-grown, Al[sub 0.34]Ga[sub 0.66]As/GaAs cascade with AM1.5 efficiency of 19.9% and 21% at 1-sun and 7-suns, respectively, was obtained. This represents an important milestone in the development of an AlGaAs/GaAs cascade by OMVPE utilizing a tunnel interconnect and demonstrates a proof-of-concept for the inverted-growth approach.

  2. DC characteristics of OMVPE-grown N-p-n InGaP/InGaAsN DHBTs

    SciTech Connect

    Li, N.Y.; Chang, P.C.; Baca, A.G.; Xie, X.M.; Sharps, P.R.; Hou, H.Q.

    2000-01-04

    The authors demonstrate, for the first time, a functional N-p-n heterojunction bipolar transistor using a novel material, InGaAsN, with a bandgap energy of 1.2eV as the p-type base layer. A 300{angstrom}-thick In{sub x}Ga{sub 1-x}As graded layer was introduced to reduce the conduction band offset at the p-type InGaAsN base and n-type GaAs collector junction. For an emitter size of 500 {mu}m{sup 2}, a peak current gain of 5.3 has been achieved.

  3. Interfacial bonding and electronic structure of GaN/GaAs interface: A first-principles study

    SciTech Connect

    Cao, Ruyue; Zhang, Zhaofu; Wang, Changhong; Li, Haobo; Dong, Hong; Liu, Hui; Wang, Weichao; Xie, Xinjian

    2015-04-07

    Understanding of GaN interfacing with GaAs is crucial for GaN to be an effective interfacial layer between high-k oxides and III-V materials with the application in high-mobility metal-oxide-semiconductor field effect transistor (MOSFET) devices. Utilizing first principles calculations, here, we investigate the structural and electronic properties of the GaN/GaAs interface with respect to the interfacial nitrogen contents. The decrease of interfacial N contents leads to more Ga dangling bonds and As-As dimers. At the N-rich limit, the interface with N concentration of 87.5% shows the most stability. Furthermore, a strong band offsets dependence on the interfacial N concentration is also observed. The valance band offset of N7 with hybrid functional calculation is 0.51 eV. The electronic structure analysis shows that significant interface states exist in all the GaN/GaAs models with various N contents, which originate from the interfacial dangling bonds and some unsaturated Ga and N atoms. These large amounts of gap states result in Fermi level pinning and essentially degrade the device performance.

  4. Sculpting the shape of semiconductor heteroepitaxial islands: fromdots to rods

    SciTech Connect

    Robinson, J.T.; Walko, D.A.; Arms, D.A.; Tinberg, D.S.; Evans,P.G.; Cao, Y.; Liddle, J.A.; Rastelli, A.; Schmidt, O.G.; Dubon, O.D.

    2006-06-20

    In the Ge on Si model heteroepitaxial system, metal patterns on the silicon surface provide unprecedented control over the morphology of highly ordered Ge islands. Island shape including nanorods and truncated pyramids is set by the metal species and substrate orientation. Analysis of island faceting elucidates the prominent role of the metal in promoting growth of preferred facet orientations while investigations of island composition and structure reveal the importance of Si-Ge intermixing in island evolution. These effects reflect a remarkable combination of metal-mediated growth phenomena that may be exploited to tailor the functionality of island arrays in heteroepitaxial systems.

  5. Self-catalyzed growth of dilute nitride GaAs/GaAsSbN/GaAs core-shell nanowires by molecular beam epitaxy

    SciTech Connect

    Kasanaboina, Pavan Kumar; Ahmad, Estiak; Li, Jia; Iyer, Shanthi; Reynolds, C. Lewis; Liu, Yang

    2015-09-07

    Bandgap tuning up to 1.3 μm in GaAsSb based nanowires by incorporation of dilute amount of N is reported. Highly vertical GaAs/GaAsSbN/GaAs core-shell configured nanowires were grown for different N contents on Si (111) substrates using plasma assisted molecular beam epitaxy. X-ray diffraction analysis revealed close lattice matching of GaAsSbN with GaAs. Micro-photoluminescence (μ-PL) revealed red shift as well as broadening of the spectra attesting to N incorporation in the nanowires. Replication of the 4K PL spectra for several different single nanowires compared to the corresponding nanowire array suggests good compositional homogeneity amongst the nanowires. A large red shift of the Raman spectrum and associated symmetric line shape in these nanowires have been attributed to phonon localization at point defects. Transmission electron microscopy reveals the dominance of stacking faults and twins in these nanowires. The lower strain present in these dilute nitride nanowires, as opposed to GaAsSb nanowires having the same PL emission wavelength, and the observation of room temperature PL demonstrate the advantage of the dilute nitride system offers in the nanowire configuration, providing a pathway for realizing nanoscale optoelectronic devices in the telecommunication wavelength region.

  6. Localized corrosion of GaAs surfaces and formation of porous GaAs

    SciTech Connect

    Schmuki, P.; Vitus, C.M.; Isaacs, H.S.; Fraser, J.; Graham, M.J.

    1995-12-01

    The present work deals with pitting corrosion of p- and n-type GaAs (100). Pit growth can be electrochemically initiated on both conduction types in chloride-containing solutions and leads after extended periods of time to the formation of a porous GaAs structure. In the case of p-type material, localized corrosion is only observed if a passivating film is present on the surface, otherwise -- e.g. in acidic solutions -- the material suffers from a uniform attack (electropolishing) which is independent of the anion present. In contrast, pitting corrosion of n-type material can be triggered independent of the presence of an oxide film. This is explained in terms of the different current limiting factor for the differently doped materials (oxide film in the case of the p- and a space charge layer in the case of the n-GaAs). The porous structure was characterized by SEM, EDX and AES, and consists mainly of GaAs. From scratch experiments it is clear that the pit initiation process is strongly influenced by surface defects. For n-type material, AFM investigations show that light induced roughening of the order of several hundred nm occurs under non-passivating conditions. This nm- scale roughening however does not affect the pitting process.

  7. AlGaAs/InGaAlP tunnel junctions for multijunction solar cells

    SciTech Connect

    SHARPS,P.R.; LI,N.Y.; HILLS,J.S.; HOU,H.; CHANG,PING-CHIH; BACA,ALBERT G.

    2000-05-16

    Optimization of GaInP{sub 2}/GaAs dual and GaInP{sub 2}/GaAs/Ge triple junction cells, and development of future generation monolithic multi-junction cells will involve the development of suitable high bandgap tunnel junctions. There are three criteria that a tunnel junction must meet. First, the resistance of the junction must be kept low enough so that the series resistance of the overall device is not increased. For AMO, 1 sun operation, the tunnel junction resistance should be below 5 x 10{sup {minus}2} {Omega}-cm. Secondly, the peak current density for the tunnel junction must also be larger than the J{sub sc} of the cell so that the tunnel junction I-V curve does not have a deleterious effect on the I-V curve of the multi-junction device. Finally, the tunnel junction must be optically transparent, i.e., there must be a minimum of optical absorption of photons that will be collected by the underlying subcells. The paper reports the investigation of four high bandgap tunnel junctions grown by metal-organic chemical vapor deposition.

  8. High-Efficiency GaInP/GaAs Tandem Solar Cells

    SciTech Connect

    Bertness, K. A.; Friedman, D. J.; Kurtz, S. R.; Kibbler, A. E.; Cramer, C.; Olson, J. M.

    1996-09-01

    GaInP/GaAs tandem solar cells have achieved efficiencies between 25.7-30.2%, depending on illumination conditions. The efficiencies are the highest confirmed two-terminal values measured for any solar cell within each standard illumination category. The monolithic, series-connected design of the tandem cells allows them to be substituted for silicon or gallium arsenide cells in photovoltaic panel systems with minimal design changes. The advantages of using GaInP/GaAs tandem solar cells in space and terrestrial applications are discussed primarily in terms of the reduction in balance-of-system costs that accrues when using a higher efficiency cell. The new efficiency values represent a significant improvement over previous efficiencies for this materials system, and we identify grid design, back interface passivation, and top interface passivation as the three key factors leading to this improvement. In producing the high-efficiency cells, we have addressed nondestructive diagnostics and materials growth reproducibility as well as peak cell performance.

  9. High-efficiency GaInP/GaAs tandem solar cells

    SciTech Connect

    Bertness, K.A.; Friedman, D.J.; Kurtz, S.R.; Kibbler, A.E.; Kramer, C.; Olson, J.M.

    1994-12-01

    GaInP/GaAs tandem solar cells have achieved new record efficiencies, specifically 25.7% under air-mass 0 (AM0) illumination, 29.5% under AM 1.5 global (AM1.5G) illumination, and 30.2% at 140-180x concentration under AM 1.5 direct (AM1.5D) illumination. These values are the highest two-terminal efficiencies achieved by any solar cell under these illumination conditions. The monolithic, series-connected design of the tandem cells allows them to be substituted for silicon or gallium arsenide cells in photovoltaic panel systems with minimal design changes. The advantages of using GaInP/GaAs tandem solar cells in space and terrestrial applications are discussed primarily in terms of the reduction in balance-of-system costs that accrues when using a higher efficiency cell. The new efficiency values represent a significant improvement over previous efficiencies for this materials system, and we identify grid design, back interface passivation, and top interface passivation as the three key factors leading to this improvement. In producing the high-efficiency cells, we have addressed nondestructive diagnostics and materials growth reproducibility as well as peak cell performance. 31 refs.

  10. TJ Solar Cell (GaInP/GaAs/Ge Ultrahigh-Efficiency Solar Cells

    SciTech Connect

    Friedman, Daniel

    2002-04-17

    This talk will discuss recent developments in III-V multijunction photovoltaic technology which have led to the highest-efficiency solar cells ever demonstrated. The relationship between the materials science of III-V semiconductors and the achievement of record solar cell efficiencies will be emphasized. For instance, epitaxially-grown GAInP has been found to form a spontaneously-ordered GaP/InP (111) superlattice. This ordering affects the band gap of the material, which in turn affects the design of solar cells which incorporate GaInP. For the next generation of ultrahigh-efficiency III-V solar cells, we need a new semiconductor which is lattice-matched to GaAs, has a band gap of 1 eV, and has long minority-carrier diffusion lengths. Out of a number of candidate materials, the recently-discovered alloy GaInNAs appears to have the greatest promise. This material satisfies the first two criteria, but has to date shown very low diffusion lengths, a problem which is our current focus in the development of these next-generation cells.

  11. Multijunction GaInP/GaInAs/Ge solar cells with Bragg reflectors

    SciTech Connect

    Emelyanov, V. M. Kalyuzhniy, N. A.; Mintairov, S. A.; Shvarts, M. Z.; Lantratov, V. M.

    2010-12-15

    Effect of subcell parameters on the efficiency of GaInP/Ga(In)As/Ge tandem solar cells irradiated with 1-MeV electrons at fluences of up to 3 x 10{sup 15} cm{sup -2} has been theoretically studied. The optimal thicknesses of GaInP and GaInAs subcells, which provide the best photocurrent matching at various irradiation doses in solar cells with and without built-in Bragg reflectors, were determined. The dependences of the photoconverter efficiency on the fluence of 1-MeV electrons and on the time of residence in the geostationary orbit were calculated for structures optimized to the beginning and end of their service lives. It is shown that the optimization of the subcell heterostructures for a rated irradiation dose and the introduction of Bragg reflectors into the structure provide a 5% overall increase in efficiency for solar cells operating in the orbit compared with unoptimized cells having no Bragg reflector.

  12. GaP/Si heterojunction Solar Cells

    SciTech Connect

    Saive, R.; Chen, C.; Emmer, H.; Atwater, H.

    2015-05-11

    Improving the efficiency of solar cells requires the introduction of novel device concepts. Recent developments have shown that in Si solar cell technology there is still room for tremendous improvement. Using the heterojunction with intrinsic thin layer (HIT) approach 25.6 % power conversion efficiency was achieved. However, a-Si as a window and passivation layer comes with disadvantages as a-Si shows low conductivity and high parasitic absorption. Therefore, it is likely that using a crystalline material as window layer with high band gab and high mobility can further improve efficiency. We have studied GaP grown by MOCVD on Si with (001) and (112) orientation. We obtained crystalline layers with carrier mobility around 100 cm2/Vs and which passivate Si as confirmed by carrier lifetime measurements. We performed band alignment studies by X-ray photoelectron spectroscopy yielding a valence band offset of 0.3 eV. Comparing this value with the Schottky-model leads to an interface dipole of 0.59 eV. The open circuit voltage increases with increasing doping and is consistent with the theoretical open circuit voltage deduced from work function difference and interface dipole. We obtain an open circuit voltage of 0.38 V for n-doped GaP with doping levels in the order of 10^17 1/cm^3. In our next steps we will increase the doping level further in order to gain higher open circuit voltage. We will discuss the implications of these findings for GaP/Si heterojunction solar cells.

  13. A monolithic white LED with an active region based on InGaN QWs separated by short-period InGaN/GaN superlattices

    SciTech Connect

    Tsatsulnikov, A. F. Lundin, W. V.; Sakharov, A. V.; Zavarin, E. E.; Usov, S. O.; Nikolaev, A. E.; Kryzhanovskaya, N. V.; Synitsin, M. A.; Sizov, V. S.; Zakgeim, A. L.; Mizerov, M. N.

    2010-06-15

    A new approach to development of effective monolithic white-light emitters is described based on using a short-period InGaN/GaN superlattice as a barrier layer in the active region of LED structures between InGaN quantum wells emitting in the blue and yellow-green spectral ranges. The optical properties of structures of this kind have been studied, and it is demonstrated that the use of such a superlattice makes it possible to obtain effective emission from the active region.

  14. Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

    SciTech Connect

    Killat, N. E-mail: Martin.Kuball@bristol.ac.uk; Montes Bajo, M.; Kuball, M. E-mail: Martin.Kuball@bristol.ac.uk; Paskova, T.; Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695 ; Evans, K. R.; Leach, J.; Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 ; Li, X.; Özgür, Ü.; Morkoç, H.; Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D.

    2013-11-04

    To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.

  15. Atomic structure of defects in GaN:Mg grown with Ga polarity

    SciTech Connect

    Liliental-Weber, Z.; Tomaszewicz, T.; Zakharov, D.; Jasinski, J.; O'Keefe, M.A.; Hautakangas, S.; Laakso, A.; Saarinen, K.

    2003-11-25

    Electron microscope phase images, produced by direct reconstruction of the scattered electron wave from a focal series of high-resolution images, were used to determine the nature of defects formed in GaN:Mg crystals. We studied bulk crystals grown from dilute solutions of atomic nitrogen in liquid gallium at high pressure and thin films grown by the MOCVD method. All the crystals were grown with Ga-polarity. In both types of samples the majority of defects were three dimensional Mg-rich hexagonal pyramids with bases on the (0001) plane and six walls on {l_brace}11{und 2}3{r_brace} planes seen in cross-section as triangulars. Some other defects appear in cross-section as trapezoidal (rectangular) defects as a result of presence of truncated pyramids. Both type of defects have hollow centers. They are decorated by Mg on all six side walls and a base. The GaN which grows inside on the defect walls shows polarity inversion. It is shown that change of polarity starts from the defect tip and propagates to the base, and that the stacking sequence changes from ab in the matrix to bc inside the defect. Exchange of the Ga sublattice with the N sublattice within the defect leads to 0.6 {+-} 0.2{angstrom} displacement between Ga sublattices outside and inside the defects. It is proposed that lateral overgrowth of the cavities formed within the defect takes place to restore matrix polarity on the defect base.

  16. Photoeffects in WO{sub 3}/GaAs electrode

    SciTech Connect

    Yoon, K.H.; Lee, J.W.; Cho, Y.S.; Kang, D.H.

    1996-12-01

    Photoeffects of a {ital p}-type GaAs coated with WO{sub 3} thin film have been investigated as a function of film thickness and photoresponse transients of the WO{sub 3}/GaAs electrode were studied. Also, these results were compared to those for a single {ital p}-type GaAs electrode. The photocurrent of the WO{sub 3}/GaAs electrode depended on the film thickness of the WO{sub 3}, showing an optimum photon efficiency for specimens of 800 A thickness. This is due to the existence of an effective interface state within the band gap which reduces trapping of carriers and facilitates carrier movement. For an 800-A-thick WO{sub 3} thin film deposited {ital p}-GaAs photoelectrode, the photogenerated electrons were found to move to an electrolyte at a higher positive onset potential compared with that of single {ital p}-type GaAs, which was confirmed as a result of transient behavior. {ital I}{endash}{ital V} and {ital C}{endash}{ital V} characteristics of the WO{sub 3}/GaAs electrode were also compared with those of a single {ital p}-type GaAs electrode. {copyright} {ital 1996 American Institute of Physics.}

  17. Effect of InGaAs interlayer on the properties of GaAs grown on Si (111) substrate by molecular beam epitaxy

    SciTech Connect

    Wen, Lei; Gao, Fangliang; Li, Jingling; Guan, Yunfang; Wang, Wenliang; Zhou, Shizhong; Lin, Zhiting; Zhang, Xiaona; Zhang, Shuguang E-mail: mssgzhang@scut.edu.cn; Li, Guoqiang E-mail: mssgzhang@scut.edu.cn

    2014-11-21

    High-quality GaAs films have been epitaxially grown on Si (111) substrates by inserting an In{sub x}Ga{sub 1−x}As interlayer with proper In composition by molecular beam epitaxy (MBE). The effect of In{sub x}Ga{sub 1−x}As (0 < x < 0.2) interlayers on the properties of GaAs films grown on Si (111) substrates by MBE has been studied in detailed. Due to the high compressive strain between InGaAs and Si, InGaAs undergoes partial strain relaxation. Unstrained InGaAs has a larger lattice constant than GaAs. Therefore, a thin InGaAs layer with proper In composition may adopt a close lattice constant with that of GaAs, which is beneficial to the growth of high-quality GaAs epilayer on top. It is found that the proper In composition in In{sub x}Ga{sub 1−x}As interlayer of 10% is beneficial to obtaining high-quality GaAs films, which, on the one hand, greatly compensates the misfit stress between GaAs film and Si substrate, and on the other hand, suppresses the formation of multiple twin during the heteroepitaxial growth of GaAs film. However, when the In composition does not reach the proper value (∼10%), the In{sub x}Ga{sub 1−x}As adopts a lower strain relaxation and undergoes a lattice constant smaller than unstrained GaAs, and therefore introduces compressive stress to GaAs grown on top. When In composition exceeds the proper value, the In{sub x}Ga{sub 1−x}As will adopt a higher strain relaxation and undergoes a lattice constant larger than unstrained GaAs, and therefore introduces tensile stress to GaAs grown on top. As a result, In{sub x}Ga{sub 1−x}As interlayers with improper In composition introduces enlarged misfit stress to GaAs epilayers grown on top, and deteriorates the quality of GaAs epilayers. This work demonstrates a simple but effective method to grow high-quality GaAs epilayers and brings up a broad prospect for the application of GaAs-based optoelectronic devices on Si substrates.

  18. New methanol plant for Kharg Island

    SciTech Connect

    Alperowicz, N.

    1992-04-08

    Iran`s National Petrochemical Co. (NPC; Teheran) plans to set up a world scale export-oriented methanol plant on Kharg Island in the Persian Gulf. It says discussions are being held with three Western groups - C. Itoh (Tokyo), H & G (London), and Uhde (Dortmund) - to supply the 660,000-m.t./year facility. The estimated $150-million project would be repaid through export of methanol within three to four years. NPC hopes to conclude talks this year. Strategically located, Kharg Island is described as a good location in peacetime. It already serves as an oil terminal. NPC has an LPG and sulfur complex there.

  19. Altered biodistribution of Ga-67 by intramuscular gold salts

    SciTech Connect

    Moult, R.G.; Bekerman, C. )

    1989-11-01

    The authors observed a deviation from the normal scintigraphic pattern of Ga-67 citrate biodistribution. An 8-year-old black girl with juvenile rheumatoid arthritis, who had been treated with intramuscular injections of gold salts, had a Ga-67 study as part of her workup. The study demonstrated no hepatic uptake, but showed elevated skeletal and renal activity. This characteristic biodistribution of Ga-67 may be due to inhibition of lysosomal enzymes by gold and/or to accumulation of gold in lysosomes. To study these possibilities, the authors reviewed the mechanisms of Ga-67 localization and gold metabolism. Alteration of the Ga-67 citrate scintigraphic pattern due to earlier treatment with gold salts has not been reported previously.

  20. Elastic properties of Pu metal and Pu-Ga alloys

    SciTech Connect

    Soderlind, P; Landa, A; Klepeis, J E; Suzuki, Y; Migliori, A

    2010-01-05

    We present elastic properties, theoretical and experimental, of Pu metal and Pu-Ga ({delta}) alloys together with ab initio equilibrium equation-of-state for these systems. For the theoretical treatment we employ density-functional theory in conjunction with spin-orbit coupling and orbital polarization for the metal and coherent-potential approximation for the alloys. Pu and Pu-Ga alloys are also investigated experimentally using resonant ultrasound spectroscopy. We show that orbital correlations become more important proceeding from {alpha} {yields} {beta} {yields} {gamma} plutonium, thus suggesting increasing f-electron correlation (localization). For the {delta}-Pu-Ga alloys we find a softening with larger Ga content, i.e., atomic volume, bulk modulus, and elastic constants, suggest a weakened chemical bonding with addition of Ga. Our measurements confirm qualitatively the theory but uncertainties remain when comparing the model with experiments.

  1. Preparation and thermoelectric properties of Ga-substituted p-type fully filled skutterudites CeFe{sub 4-x}Ga{sub x}Sb{sub 12}

    SciTech Connect

    Tan, Gangjian; Wang, Shanyu; Tang, Xinfeng; Li, Han; Uher, Ctirad

    2012-12-15

    We demonstrate a successful substitution of Ga at the Fe sites with a solubility limit of -0.11 in the p-type filled skutterudite compounds CeFe{sub 4-x}Ga{sub x}Sb{sub 12}. With increasing Ga content, the electrical conductivity declines while the Seebeck coefficient improves gradually, consistent with the expected decrease in hole concentration due to the extra electrons introduced by Ga. Moreover, the resemblances in electrical transport properties between Ga- and Co-substituted systems with similar composition indicate that Ga doping exerts little influence on the electronic structure near the top of the valence band. The phonon transport is scarcely affected by the introduction of Ga because of negligible differences in atomic masses and sizes of Ga and Fe. The thermoelectric performance of Ga-substituted samples is slightly improved in the temperature range of 600 K to 800 K with respect to that of Ga-free sample, revealing a favorable effect of Ga-substitution on the intermediate temperature power generation application of this promising p-type material. - Graphical abstract: (a-c) Ga successfully substitutes Fe atoms up to x=0.11 in the CeFe{sub 4-x}Ga{sub x}Sb{sub 12}. (d) The introduction of Ga barely affects the electronic structure near E{sub F}. Highlights: Black-Right-Pointing-Pointer Ga as an effective substitute for Fe in p-type skutterudites CeFe{sub 4-x}Ga{sub x}Sb{sub 12}. Black-Right-Pointing-Pointer The solubility limit of Ga at Fe sites is -0.11 in CeFe{sub 4-x}Ga{sub x}Sb{sub 12}. Black-Right-Pointing-Pointer Ga barely affects the electronic structure near the Fermi level.

  2. Washington Island El Coop, Inc | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Washington Island El Coop, Inc Jump to: navigation, search Name: Washington Island El Coop, Inc Place: Wisconsin Phone Number: 920-847-2541 Website: wiecoop.com Outage Hotline:...

  3. ARM Climate Modeling Best Estimate From Manus Island, PNG (ARMBE...

    Office of Scientific and Technical Information (OSTI)

    From Manus Island, PNG (ARMBE-ATM TWPC1) Title: ARM Climate Modeling Best Estimate From Manus Island, PNG (ARMBE-ATM TWPC1) The ARM CMBE-ATM Xie, McCoy, Klein et al. data file ...

  4. Hess Retail Natural Gas and Elec. Acctg. (Rhode Island) | Open...

    OpenEI (Open Energy Information) [EERE & EIA]

    Rhode Island) Jump to: navigation, search Name: Hess Retail Natural Gas and Elec. Acctg. Place: Rhode Island References: EIA Form EIA-861 Final Data File for 2010 - File220101...

  5. Prince Edward Island: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Prince Edward Island: Energy Resources Jump to: navigation, search Name Prince Edward Island, Canada Equivalent URI DBpedia GeoNames ID 6113358 Coordinates 46.333333, -63.5...

  6. Noble Americas Energy Solutions LLC (Rhode Island) | Open Energy...

    OpenEI (Open Energy Information) [EERE & EIA]

    Rhode Island) Jump to: navigation, search Name: Noble Americas Energy Solutions LLC Place: Rhode Island Phone Number: 1 877-273-6772 Website: noblesolutions.com Outage Hotline: 1...

  7. Thermal island destabilization and the Greenwald limit (Journal...

    Office of Scientific and Technical Information (OSTI)

    Because field lines in an island are isolated from the outside plasma, an island can heat or cool preferentially depending on the balance of Ohmic heating and radiation loss in the ...

  8. Assessing Pathways in the U.S. Virgin Islands and Hawai'i

    Energy.gov [DOE]

    Energy Transition Initiative: Islands lesson learned detailing work done in the U.S. Virgin Islands and Hawai'i.

  9. Growth of GaN@InGaN Core-Shell and Au-GaN Hybrid Nanostructures for Energy Applications

    DOE PAGES [OSTI]

    Kuykendall, Tevye; Aloni, Shaul; Jen-La Plante, Ilan; Mokari, Taleb

    2009-01-01

    We demonstrated a method to control the bandgap energy of GaN nanowires by forming GaN@InGaN core-shell hybrid structures using metal organic chemical vapor deposition (MOCVD). Furthermore, we show the growth of Au nanoparticles on the surface of GaN nanowires in solution at room temperature. The work shown here is a first step toward engineering properties that are crucial for the rational design and synthesis of a new class of photocatalytic materials. The hybrid structures were characterized by various techniques, including photoluminescence (PL), energy dispersive x-ray spectroscopy (EDS), transmission and scanning electron microscopy (TEM and SEM), and x-ray diffraction (XRD).

  10. Alternative Fuels Data Center: Rhode Island Transportation Data for

    Alternative Fuels and Advanced Vehicles Data Center

    Alternative Fuels and Vehicles Rhode Island Transportation Data for Alternative Fuels and Vehicles to someone by E-mail Share Alternative Fuels Data Center: Rhode Island Transportation Data for Alternative Fuels and Vehicles on Facebook Tweet about Alternative Fuels Data Center: Rhode Island Transportation Data for Alternative Fuels and Vehicles on Twitter Bookmark Alternative Fuels Data Center: Rhode Island Transportation Data for Alternative Fuels and Vehicles on Google Bookmark

  11. Workplace Charging Challenge Partner: The University of Rhode Island |

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Department of Energy The University of Rhode Island Workplace Charging Challenge Partner: The University of Rhode Island Workplace Charging Challenge Partner: The University of Rhode Island Joined the Challenge: July 2015 Headquarters: Kingston, RI Charging Location: Kingston, RI Domestic Employees: 1,815 The University of Rhode Island (URI) is committed to maintaining its reputation as an institution that values practices and principles of sustainability. URI drafted a detailed Strategic

  12. Rhode Island Total Electric Power Industry Net Summer Capacity...

    Energy Information Administration (EIA) (indexed site)

    Rhode Island" "Energy Source",2006,2007,2008,2009,2010 "Fossil",1743,1754,1754,1754,1754 " ... " Other Gases","-","-","-","-","-" "Nuclear","-","-","-","-","-" ...

  13. Foster-Glocester Regional School District (Rhode Island) - Financing Profile

    SciTech Connect

    none,

    2008-12-01

    This document is an EnergySmart Schools Financing Profile of Foster-Glocester Regional School District in Rhode Island

  14. United States Virgin Islands: St. Thomas (Bovoni) & St. Croix (Longford)

    DOE Data Explorer

    Roberts, O.; Andreas, A.

    Two measurement stations to collect wind data to support future wind power generation in the U.S. Virgin Islands.

  15. Island Energy Tools and Trainings | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Energy Transition Initiative » Island Energy Tools and Trainings Island Energy Tools and Trainings Islands can use the tools below to gather data for decision makers and run scenarios on potential energy investments. Tailored trainings provide in-person, onsite guidance and best practices for implementing clean energy solutions. Tools Island Energy Scenario Tool The ETI Energy Scenario Tool helps communities analyze different pathways to meet a given energy transition goal by modeling the

  16. A Presidential Proclamation - Asian American and Pacific Islander Heritage

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Month | Department of Energy A Presidential Proclamation - Asian American and Pacific Islander Heritage Month A Presidential Proclamation - Asian American and Pacific Islander Heritage Month May 1, 2013 - 9:25am Addthis A Presidential Proclamation - Asian American and Pacific Islander Heritage Month BY THE PRESIDENT OF THE UNITED STATES OF AMERICA A PROCLAMATION Each May, our Nation comes together to recount the ways Asian Americans and Pacific Islanders (AAPIs) helped forge our country. We

  17. United States Virgin Islands: St. Thomas (Bovoni) & St. Croix (Longford)

    DOE Data Explorer

    Roberts, O.; Andreas, A.

    1997-01-01

    Two measurement stations to collect wind data to support future wind power generation in the U.S. Virgin Islands.

  18. Microsoft Word - Rhode Island EA - FINAL EA.doc

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    THE RHODE ISLAND LFG GENCO, LLC COMBINED CYCLE ELECTRICITY GENERATION PLANT FUELED BY LANDFILL GAS JOHNSTON, RHODE ISLAND U.S. Department of Energy National Energy Technology Laboratory August 2010 DOE/EA-1742 FINAL ENVIRONMENTAL ASSESSMENT FOR THE RHODE ISLAND LFG GENCO, LLC COMBINED CYCLE ELECTRICITY GENERATION PLANT FUELED BY LANDFILL GAS JOHNSTON, RHODE ISLAND U.S. Department of Energy National Energy Technology Laboratory August 2010 DOE/EA-1742 ACRONYMS AND ABBREVIATIONS CFR Code of

  19. Virgin Islands Recovery Act State Memo | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Virgin Islands Recovery Act State Memo Virgin Islands Recovery Act State Memo The American Recovery & Reinvestment Act( ARRA) is making a meaningful down payment on the nation's energy and environmental future. The Recovery Act investments in the U.S. Virgin Islands are supporting a broad range of clean energy projects from energy efficiency and the smart grid to solar power and biofuels. Through these investments, the U.S. Virgin Islands' businesses, universities, non-profits, and local

  20. Structural and emission properties of InGaAs/GaAs quantum dots emitting at 1.3??m

    SciTech Connect

    Goldmann, Elias Jahnke, Frank; Paul, Matthias; Kettler, Jan; Jetter, Michael; Michler, Peter; Krause, Florian F.; Mller, Knut; Mehrtens, Thorsten; Rosenauer, Andreas

    2014-10-13

    A combined experimental and theoretical study of InGaAs/GaAs quantum dots (QDs) emitting at 1.3??m under the influence of a strain-reducing InGaAs quantum well is presented. We demonstrate a red shift of 2040?nm observed in photoluminescence spectra due to the quantum well. The InGaAs/GaAs QDs grown by metal organic vapor phase epitaxy show a bimodal height distribution (1?nm and 5?nm) and indium concentrations up to 90%. The emission properties are explained with combined tight-binding and configuration-interaction calculations of the emission wavelengths in conjunction with high-resolution scanning transmission electron microscopy investigations of QD geometry and indium concentrations in the QDs, which directly enter the calculations. QD geometries and concentration gradients representative for the ensemble are identified.

  1. Progress toward technology transition of GaInP{sub 2}/GaAs/Ge multijunction solar cells

    SciTech Connect

    Keener, D.N.; Marvin, D.C.; Brinker, D.J.; Curtis, H.B.; Price, P.M.

    1997-12-31

    The objective of the joint WL/PL/NASA Multijunction Solar Cell Manufacturing Technology (ManTech) Program is to scale up high efficiency GaInP{sub 2}/GaAs/Ge multijunction solar cells to production size, quantity, and yield while limiting the production cost/Watt ($/W) to 15% over GaAs cells. Progress made by the program contractors, Spectrolab and TECSTAR, include, respectively, best cell efficiencies of 25.76% and 24.7% and establishment of 24.2% and 23.8% lot average efficiency baseline designs. The paper also presents side-by-side testing results collected by Phillips Laboratory and NASA Lewis on Phase 1 deliverable cells, which shows compliance with program objectives. Cell performance, pre- and post-radiation, and temperature coefficient results on initial production GaInP{sub 2}/GaAs/Ge solar cells will be presented.

  2. Bainbridge Island Summary of Reported Data | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Summary of Reported Data Bainbridge Island Summary of Reported Data Summary of data for Bainbridge Island, a partner in the U.S. Department of Energy's Better Buildings Neighborhood Program. Bainbridge Island Summary of Reported Data (1.44 MB) More Documents & Publications Washington -- SEP Summary of Reported Data NYSERDA Summary of Reported Data Camden, New Jersey Summary of Reported Data

  3. Optical properties of multi-stacked InGaAs/GaNAs quantum dot solar cell fabricated on GaAs (311)B substrate

    SciTech Connect

    Shoji, Yasushi; Akimoto, Katsuhiro; Okada, Yoshitaka

    2012-09-15

    Quantum dot solar cells (QDSCs) comprised of 10 stacked pairs of strain-compensated InGaAs/GaNAs QD structure have been fabricated by atomic hydrogen-assisted molecular beam epitaxy. A homogeneous and high-density QD array structure with improved in-plane ordering and total density of {approx}10{sup 12} cm{sup -2} has been achieved on GaAs (311)B grown at 460 Degree-Sign C after stacking. The external quantum efficiency (EQE) of InGaAs/GaNAs QDSC increases in the longer wavelength range due to additive contribution from QD layers inserted in the intrinsic region. The short-circuit current density measured for QDSC is 17.2 mA/cm{sup 2} compared to 14.8 mA/cm{sup 2} of GaAs reference cell. Further, an increase in EQE due to photocurrent production by 2-step photon absorption has been observed at room temperature though it is still small at around 0.1%.

  4. Big Island Demonstration Project - Black Liquor

    SciTech Connect

    2006-08-01

    Black liquor is a papermaking byproduct that also serves as a fuel for pulp and paper mills. This project involves the design, construction, and operation of a black liquor gasifier that will be integrated into Georgia-Pacific's Big Island facility in Virginia, a mill that has been in operation for more than 100 years.

  5. Asian American and Pacific Islander Heritage Month

    Energy.gov [DOE]

    A celebration of Asians and Pacific Islanders in the United States. The month of May was chosen to commemorate the immigration of the first Japanese to the United States on May 7, 1843, and to mark the anniversary of the completion of the transcontinental railroad on May 10, 1869. The majority of the workers who laid the tracks were Chinese immigrants.

  6. Energy Transition Initiative: Islands Playbook (Book)

    SciTech Connect

    Not Available

    2015-01-01

    The Island Energy Playbook (the Playbook) provides an action-oriented guide to successfully initiating, planning, and completing a transition to an energy system that primarily relies on local resources to eliminate a dependence on one or two imported fuels. It is intended to serve as a readily available framework that any community can adapt to organize its own energy transition effort.

  7. Aleutian Pribilof Islands Association- 2010 Project

    Energy.gov [DOE]

    The Aleutian Pribilof Islands Association, Inc. (APIA) will conduct on-site weatherization and energy conservation education and a home energy and safety review in the communities of Akutan, Atka, False Pass, King Cove, Nelson Lagoon, Nikolski, Sand Point, St. George, St. Paul, and Unalaska.

  8. Philippine Islands: a tectonic railroad siding

    SciTech Connect

    Gallagher, J.J. Jr.

    1984-09-01

    In 1976, significant quantities of oil were discovered offshore northwest of Palawan Island by a Philippine-American consortium led by Philippines-Cities Service Inc. This was the first commercial oil found in the Philippine Islands. Other exploration companies had decided that there was no commercial oil in the Philippines. They fell prey to a situation Wallace E. Pratt, who began his career in 1909 in the Philippines, later described: There are many instances where our knowledge, supported in some cases by elaborate and detailed studies has convinced us that no petroleum resources were present in areas which subsequently became sites of important oil fields. Some explorers are blinded by the negative implications of the same knowledge that successful explorers use to find important oil fields. The Palawan discoveries are examples of successful use of knowledge. Recognition that the Philippine Islands are a tectonic railroad siding may be the key to future exploration success. These islands are continental fragments, each with its own individual geologic characteristics, that have moved from elsewhere to their present positions along a major strike-slip zone. Play concepts can be developed in the Philippines for continental fragments in each of the three major present-day tectono-stratigraphic systems that are dominated by strike-slip, but include subduction and extension tectonics, with both carbonate and clastic sediments.

  9. Single photon emission from site-controlled InGaN/GaN quantum dots

    SciTech Connect

    Zhang, Lei; Hill, Tyler A.; Deng, Hui; Teng, Chu-Hsiang; Lee, Leung-Kway; Ku, Pei-Cheng

    2013-11-04

    Single photon emission was observed from site-controlled InGaN/GaN quantum dots. The single-photon nature of the emission was verified by the second-order correlation function up to 90 K, the highest temperature to date for site-controlled quantum dots. Micro-photoluminescence study on individual quantum dots showed linearly polarized single exciton emission with a lifetime of a few nanoseconds. The dimensions of these quantum dots were well controlled to the precision of state-of-the-art fabrication technologies, as reflected in the uniformity of their optical properties. The yield of optically active quantum dots was greater than 90%, among which 13%–25% exhibited single photon emission at 10 K.

  10. Room temperature spin transport in undoped (110) GaAs/AlGaAs quantum wells

    SciTech Connect

    Yokota, Nobuhide Aoshima, Yohei; Ikeda, Kazuhiro; Kawaguchi, Hitoshi

    2014-02-17

    We are reporting on our first observation of a micrometer-order electron spin transport in a (110) GaAs/AlGaAs multiple quantum well (QW) at room temperature using a space- and time-resolved Kerr rotation technique. A 37-μm transport was observed within an electron spin lifetime of 1.2 ns at room temperature when using an in-plane electric field of 1.75 kV/cm. The spatio-temporal profiles of electron spins were well reproduced by the spin drift-diffusion equations coupled with the Poisson equation, supporting the validity of the measurement. The results suggest that (110) QWs are useful as a spin transport layer for semiconductor spintronic devices operating at room temperature.

  11. Raman spectroscopy of GaP/GaNP core/shell nanowires

    SciTech Connect

    Dobrovolsky, A.; Chen, W. M.; Buyanova, I. A.; Sukrittanon, S.; Kuang, Y. J.; Tu, C. W.

    2014-11-10

    Raman spectroscopy is employed to characterize structural and phonon properties of GaP/GaNP core/shell nanowires (NWs) grown by molecular beam epitaxy on Si substrates. According to polarization-dependent measurements performed on single NWs, the dominant Raman modes associated with zone-center optical phonons obey selection rules in a zinc-blende lattice, confirming high crystalline quality of the NWs. Two additional modes at 360 and 397 cm{sup −1} that are specific to the NW architecture are also detected in resonant Raman spectra and are attributed to defect-activated scattering involving zone-edge transverse optical phonons and surface optical phonons, respectively. It is concluded that the formation of the involved defect states are mainly promoted during the NW growth with a high V/III ratio.

  12. Large linear magnetoresistance in a GaAs/AlGaAs heterostructure

    SciTech Connect

    Aamir, Mohammed Ali Goswami, Srijit Ghosh, Arindam; Baenninger, Matthias; Farrer, Ian; Ritchie, David A.; Tripathi, Vikram; Pepper, Michael

    2013-12-04

    We report non-saturating linear magnetoresistance (MR) in a two-dimensional electron system (2DES) at a GaAs/AlGaAs heterointerface in the strongly insulating regime. We achieve this by driving the gate voltage below the pinch-off point of the device and operating it in the non-equilibrium regime with high source-drain bias. Remarkably, the magnitude of MR is as large as 500% per Tesla with respect to resistance at zero magnetic field, thus dwarfing most non-magnetic materials which exhibit this linearity. Its primary advantage over most other materials is that both linearity and the enormous magnitude are retained over a broad temperature range (0.3 K to 10 K), thus making it an attractive candidate for cryogenic sensor applications.

  13. Sidewall passivation for InGaN/GaN nanopillar light emitting diodes

    SciTech Connect

    Choi, Won Hyuck; Abraham, Michael; Yu, Shih-Ying; You, Guanjun; Liu, Jie; Wang, Li; Xu, Jian; Mohney, Suzanne E.

    2014-07-07

    We studied the effect of sidewall passivation on InGaN/GaN multiquantum well-based nanopillar light emitting diode (LED) performance. In this research, the effects of varying etch rate, KOH treatment, and sulfur passivation were studied for reducing nanopillar sidewall damage and improving device efficiency. Nanopillars prepared under optimal etching conditions showed higher photoluminescence intensity compared with starting planar epilayers. Furthermore, nanopillar LEDs with and without sulfur passivation were compared through electrical and optical characterization. Suppressed leakage current under reverse bias and four times higher electroluminescence (EL) intensity were observed for passivated nanopillar LEDs compared with unpassivated nanopillar LEDs. The suppressed leakage current and EL intensity enhancement reflect the reduction of non-radiative recombination at the nanopillar sidewalls. In addition, the effect of sulfur passivation was found to be very stable, and further insight into its mechanism was gained through transmission electron microscopy.

  14. Evaluation of the two-photon absorption characteristics of GaSb/GaAs quantum rings

    SciTech Connect

    Wagener, M. C.; Botha, J. R.; Carrington, P. J.; Krier, A.

    2014-07-28

    The optical parameters describing the sub-bandgap response of GaSb/GaAs quantum rings solar cells have been obtained from photocurrent measurements using a modulated pseudo-monochromatic light source in combination with a second, continuous photo-filling source. By controlling the charge state of the quantum rings, the photoemission cross-sections describing the two-photon sub-bandgap transitions could be determined independently. Temperature dependent photo-response measurements also revealed that the barrier for thermal hole emission from the quantum rings is significantly below the quantum ring localisation energy. The temperature dependence of the sub-bandgap photo-response of the solar cell is also described in terms of the photo- and thermal-emission characteristics of the quantum rings.

  15. Ultrafast dynamics of type-II GaSb/GaAs quantum dots

    SciTech Connect

    Komolibus, K.; Piwonski, T.; Gradkowski, K.; Reyner, C. J.; Liang, B.; Huffaker, D. L.; Huyet, G.; Houlihan, J.

    2015-01-19

    In this paper, room temperature two-colour pump-probe spectroscopy is employed to study ultrafast carrier dynamics in type-II GaSb/GaAs quantum dots. Our results demonstrate a strong dependency of carrier capture/escape processes on applied reverse bias voltage, probing wavelength and number of injected carriers. The extracted timescales as a function of both forward and reverse bias may provide important information for the design of efficient solar cells and quantum dot memories based on this material. The first few picoseconds of the dynamics reveal a complex behaviour with an interesting feature, which does not appear in devices based on type-I materials, and hence is linked to the unique carrier capture/escape processes possible in type-II structures.

  16. Characterization of Cu(In,Ga)Se2 (CIGS) films with varying gallium ratios

    SciTech Connect

    Claypoole, Jesse; Peace, Bernadette; Sun, Neville; Dwyer, Dan; Eisaman, Matthew D.; Haldar, Pradeep; Efstathiadis, Harry

    2015-09-05

    Cu(In1-x,Gax)Se2 (CIGS) absorber layers were deposited on molybdenum (Mo) coated soda-lime glass substrates with varying Ga content (described as Ga/(In+Ga) ratios) with respect to depth. As the responsible mechanisms for the limitation of the performance of the CIGS solar cells with high Ga contents are not well understood, the goal of this work was to investigate different properties of CIGS absorber films with Ga/(In+Ga) ratios varied between 0.29 and 0.41 (as determined by X-ray florescence spectroscopy (XRF)) in order to better understand the role that the Ga content has on film quality. The Ga grading in the CIGS layer has the effect causing a higher bandgap toward the surface and Mo contact while the band gap in the middle of the CIGS layer is lower. Also, a wider and larger Ga/(In+Ga) grading dip located deeper in the CIGS absorber layers tend to produce larger grains in the regions of the films that have lower Ga/(In+Ga) ratios. It was found that surface roughness decreases from 51.2 nm to 41.0 nm with increasing Ga/(In+Ga) ratios. However, the surface roughness generally decreases if the Ga grading occurs deeper in the absorber layer.

  17. Geohydrology of Enewetak Atoll islands and reefs

    SciTech Connect

    Buddemeier, R.W.

    1981-05-06

    Extensive tidal studies in island wells and the lagoon at Enewetak Atoll have shown that island ground water dynamics are controlled by a layered aquifer system. The surface aquifer of unconsolidated Holocene material extends to a depth of approximately 15 m, and has a hydraulic conductivity K = 60 m/day. From 15 to 60 m (approximate lagoon depth) the reef structure consists of successive layers of altered Pleistocene materials, with bulk permeability substantially higher than that of the surface aquifer. Because of wave set-up over the windward reef and the limited pass area for outflow at the south end of the atoll, lagoon tides rise in phase with the ocean tides but fall later than the ocean water level. This results in a net lagoon-to-ocean head which can act as the driving force for outflow through the permeable Pleistocene aquifer. This model suggests that fresh water, nutrients or radioactive contaminants found in island ground water or reef interstitial water may be discharged primarily into the ocean rather than the lagoon. Atoll island fresh water resources are controlled by recharge, seawater dilution due to vertical tidal mixing between the surface and deeper aquifers, and by loss due to entrainment by the outflowing water in the deeper aquifers. Estimated lagoon-ot-ocean transit times through the deep aquifer are on the order of a few years, which corresponds well to the freshwater residence time estimates based on inventory and recharge. Islands in close proximity to reef channels have more fresh ground water than others, which is consistent with a locally reduced hydraulic gradient and slower flow through the Pleistocene aquifers.

  18. Thermal Design and Characterization of Heterogeneously Integrated InGaP/GaAs HBTs

    DOE PAGES [OSTI]

    Choi, Sukwon; Peake, Gregory M.; Keeler, Gordon A.; Geib, Kent M.; Briggs, Ronald D.; Beechem, Thomas E.; Shaffer, Ryan A.; Clevenger, Jascinda; Patrizi, Gary A.; Klem, John F.; et al

    2016-04-21

    Flip-chip heterogeneously integrated n-p-n InGaP/GaAs heterojunction bipolar transistors (HBTs) with integrated thermal management on wide-bandgap AlN substrates followed by GaAs substrate removal are demonstrated. Without thermal management, substrate removal after integration significantly aggravates self-heating effects, causing poor I–V characteristics due to excessive device self-heating. An electrothermal codesign scheme is demonstrated that involves simulation (design), thermal characterization, fabrication, and evaluation. Thermoreflectance thermal imaging, electrical-temperature sensitive parameter-based thermometry, and infrared thermography were utilized to assess the junction temperature rise in HBTs under diverse configurations. In order to reduce the thermal resistance of integrated devices, passive cooling schemes assisted by structural modification, i.e.,more » positioning indium bump heat sinks between the devices and the carrier, were employed. By implementing thermal heat sinks in close proximity to the active region of flip-chip integrated HBTs, the junction-to-baseplate thermal resistance was reduced over a factor of two, as revealed by junction temperature measurements and improvement of electrical performance. In conclusion, the suggested heterogeneous integration method accounts for not only electrical but also thermal requirements providing insight into realization of advanced and robust III–V/Si heterogeneously integrated electronics.« less

  19. Germanium subcells for multijunction GaInP/GaInAs/Ge solar cells

    SciTech Connect

    Kalyuzhnyy, N. A.; Gudovskikh, A. S.; Evstropov, V. V.; Lantratov, V. M.; Mintairov, S. A.; Timoshina, N. Kh.; Shvarts, M. Z.; Andreev, V. M.

    2010-11-15

    Photovoltaic converters based on n-GaInP/n-p-Ge heterostructures grown by the OMVPE under different conditions of formation of the p-n junction are studied. The heterostructures are intended for use as narrow-gap subcells of the GaInP/GaInAs/Ge three-junction solar cells. It is shown that, in Ge p-tn junctions, along with the diffusion mechanism, the tunneling mechanism of the current flow exists; therefore, the two-diode electrical equivalent circuit of the Ge p-n junction is used. The diode parameters are determined for both mechanisms from the analysis of both dark and 'light' current-voltage dependences. It is shown that the elimination of the component of the tunneling current allows one to increase the efficiency of the Ge subcell by {approx}1% with conversion of nonconcentrated solar radiation. The influence of the tunneling current on the efficiency of the Ge-based devices can be in practice reduced to zero at photogenerated current density of {approx}1.5 A/cm{sup 2} due to the use of the concentrated solar radiation.

  20. Transport properties of InGaAs/GaAs Heterostructures with {delta}-doped quantum wells

    SciTech Connect

    Baidus, N. V.; Vainberg, V. V.; Zvonkov, B. N.; Pylypchuk, A. S. Poroshin, V. N.; Sarbey, O. G.

    2012-05-15

    The lateral transport of electrons in single- and double-well pseudomorphic GaAs/n-InGaAs/GaAs heterostructures with quantum wells 50-100 meV deep and impurity {delta}-layers in the wells, with concentrations in the range 10{sup 11} < N{sub s} < 10{sup 12} cm{sup -2}, has been investigated. Single-well structures with a doped well at the center exhibit a nonmonotonic temperature dependence of the Hall coefficient and an increase in low-temperature electron mobility with an increase in the impurity concentration. The results obtained indicate that the impurity-band electron states play an important role in the conductivity of these structures. Involvement of the impurity band also allows to explain adequately the characteristics of the conductivity of double-well structures; in contrast to single-well structures, band bending caused by asymmetric doping is of great importance. The numerical calculations of conductivity within the model under consideration confirm these suggestions.

  1. Ferromagnetism in undoped One-dimensional GaN Nanowires

    SciTech Connect

    Jeganathan, K. E-mail: jagan@physics.bdu.ac.in; Purushothaman, V.; Debnath, R.; Arumugam, S.

    2014-05-15

    We report an intrinsic ferromagnetism in vertical aligned GaN nanowires (NW) fabricated by molecular beam epitaxy without any external catalyst. The magnetization saturates at ?0.75 emu/gm with the applied field of 3000 Oe for the NWs grown under the low-Gallium flux of 2.4 10{sup ?8} mbar. Despite a drop in saturation magnetization, narrow hysteresis loop remains intact regardless of Gallium flux. Magnetization in vertical standing GaN NWs is consistent with the spectral analysis of low-temperature photoluminescence pertaining to Ga-vacancies associated structural defects at the nanoscale.

  2. Characterization of Zns-GaP Naon-composites

    SciTech Connect

    Todd, V.

    1993-12-09

    It proved possible to produce consistent, high-quality nanocrystalline ZnS powders with grain sizes as small as 8 nm. These powders are nano-porous and are readily impregnated with GaP precursor, although inconsistently. Both crystal structure and small grain size of the ZnS can be maintained through the use of GaP. Heat treatment of the impregnated powders results in a ZnS-GaP composite structure where the grain sizes of the phases are on the order of 10--20 nm. Conventional powder processing should be able to produce optically dense ceramic compacts with improved mechanical properties and suitable IR transmission.

  3. Quaternary AlInGaN/InGaN quantum well on vicinal c-plane substrate for high emission intensity of green wavelengths

    SciTech Connect

    Park, Seoung-Hwan; Pak, Y. Eugene; Park, Chang Young; Mishra, Dhaneshwar; Yoo, Seung-Hyun; Cho, Yong-Hee Shim, Mun-Bo; Kim, Sungjin

    2015-05-14

    Electronic and optical properties of non-trivial semipolar AlInGaN/InGaN quantum well (QW) structures are investigated by using the multiband effective-mass theory and non-Markovian optical model. On vicinal c-plane GaN substrate miscut by a small angle (??GaN/InGaN system is shown to have ?3 times larger spontaneous emission peak intensity than the conventional InGaN/GaN system at green wavelength. It is attributed to much larger optical matrix element of the quaternary AlInGaN/InGaN system, derived from the reduction of internal electric field induced by polarizations. This effect exceeds the performance-degrading factor of smaller quasi-Fermi-level separation for the quaternary AlInGaN/InGaN system than that for the conventional InGaN/GaN system. Results indicate that the use of quaternary III-nitride QWs on vicinal substrates may be beneficial in improving the performance of optical devices emitting green light.

  4. Emission properties of InGaAs/GaAs heterostructures with quantum wells and dots after irradiation with neutrons

    SciTech Connect

    Baidus, N. V.; Vikhrova, O. V. Zvonkov, B. N.; Malysheva, E. I.; Trufanov, A. N.

    2015-03-15

    The effect of neutron radiation on the luminescence of InGaAs/GaAs heterostructures with quantum wells and quantum dots is studied. It is found that neutron radiation results both in the formation of defects and in the radiation-induced annealing of growth-related defects. Quantum dots are more stable to neutron radiation in comparison with quantum wells. It is shown that the layer of InGaAs/GaAs quantum dots located near the surface is less sensitive to irradiation with neutrons compared with a similar layer located in the bulk. In the first case, one can observe an increase in the photoluminescence and electroluminescence intensities after irradiation with neutrons, which is related to the effects of radiation-induced annealing. The pronounced effect of elastic strains in the InGaAs/GaAs quantum wells on the extent of quenching of the photoluminescence intensity upon irradiation with neutrons is revealed. In heterostructures with quantum wells, the effect of radiation-induced annealing manifests itself in a shift of the photoluminescence peak to longer wavelengths as a result of a decrease in elastic strains upon irradiation with neutrons. Doping of the GaAs buffer layer with silicon also reduces the value of this spectral shift.

  5. Outdoor Testing of GaInP2/GaAs Tandem Cells with Top Cell Thickness Varied

    SciTech Connect

    McMahon, W. E.; Emergy, K. E.; Friedman, D. J.; Ottoson, L.; Young, M. S.; Ward, J. S.; Kramer, C. M.; Duda, A.; Kurtz, S.

    2005-08-01

    In this study, we measure the performance of GaInP2/GaAs tandem cells under direct beam sunlight outdoors in order to quantify their sensitivity to both spectral variation and GaInP2 top-cell thickness. A set of cells with five different top-cell thicknesses was mounted on a two-axis tracker with the incident sunlight collimated to exclude all except the direct beam. Current-voltage (I-V) curves were taken throughout the course of several days, along with measurements of the direct solar spectrum. Our two major conclusions are: (1) GaInP2/GaAs tandem cells designed for either the ASTM G-173 direct (G-173D) spectrum or the "air mass 1.5 global" (AM1.5G) spectrum perform the best, and (2) cells can be characterized indoors and modeled using outdoor spectra with the same result. These results are equally valid for GaInP2/GaAs/Ge triple-junction cells.

  6. Local Structures and Interface Morphology of InGaAsN Thin Films Grown on GaAs

    SciTech Connect

    Allerman, A.A.; Chen, J.G.; Geisz, J.F.; Huang, S.; Hulbert, S.L.; Jones, E.D.; Kao, Y.H.; Kurtz, S.; Kurtz, S.R.; Olson, J.M.; Soo, Y.L.

    1999-02-23

    The compound semiconductor system InGaAsN exhibits many intriguing properties which are particularly useful for the development of innovative high efficiency thin film solar cells and long wavelength lasers. The bandgap in these semiconductors can be varied by controlling the content of N and In and the thin films can yet be lattice-matched to GaAs. In the present work, x-ray absorption fine structure (XAFS) and grazing incidence x-ray scattering (GIXS) techniques have been employed to probe the local environment surrounding both N and In atoms as well as the interface morphology of InGaAsN thin films epitaxially grown on GaAs. The soft x-ray XAFS results around nitrogen K-edge reveal that N is in the sp{sup 3} hybridized bonding configuration in InGaAsN and GaAsN, suggesting that N impurities most likely substitute for As sites in these two compounds. The results of In K-edge XAFS suggest a possible trend of a slightly larger coordination number of As nearest neighbors around In atoms in InGaAsN samples with a narrower bandgap whereas the In-As interatomic distance remains practically the same as in InAs within the experimental uncertainties. These results combined suggest that N-substitution of the As sites plays an important role of bandgap-narrowing while in the meantime counteracting the compressive strain caused by In-doping. Grazing incidence x-ray scattering (GIXS) experiments verify that InGaAsN thin films can indeed form very smooth interfaces with GaAs yielding an average interfacial roughness of 5-20{angstrom}.

  7. Genomic Island Identification Software v 1.0

    SciTech Connect

    2014-08-25

    Genomic islands are key mobile DNA elements in bacterial evolution, that can distinguish pathogenic strains from each other, or distinguish pathogenic strains from non-pathogenic strains. Their detection in genomes is a challenging problem. We present 3 main software components that attack the island detection problem on two different bases: 1) the preference of islands to insert in chromosomal tRNA or tmRNA genes (islander.pl), and 2) islands? sporadic occurrence among closely related strains. The latter principle is employed in both an algorithm (learnedPhyloblocks.pl) and a visualization method (panGenome.pl). Component islander.pl finds islands based on their preference for a particular target gene type. We annotate each tRNA and tmRNA gene, find fragments of each such gene as candidates for the distal ends of islands, and filter candidates to remove false positives. Component learnedPhyloblocks.pl uses islands found by islander.pl and other methods as a training set to find new islands. Reference genomes are aligned using mugsy, then the ?phylotypes? or patterns of occurrence in the reference set are determined for each position in the target genome, and those phylotypes most enriched in the training set of islands are followed to detect yet more islands. Component panGenome.pl produces a big-data visualization of the chromosomally-ordered ?pan-genome?, that includes every gene of every reference genome (x-axis, pan-genome order; y-axis, reference genomes; color-coding, gene presence/absence etc.), islands appearing as dark patches.

  8. Genomic Island Identification Software v 1.0

    Energy Science and Technology Software Center

    2014-08-25

    Genomic islands are key mobile DNA elements in bacterial evolution, that can distinguish pathogenic strains from each other, or distinguish pathogenic strains from non-pathogenic strains. Their detection in genomes is a challenging problem. We present 3 main software components that attack the island detection problem on two different bases: 1) the preference of islands to insert in chromosomal tRNA or tmRNA genes (islander.pl), and 2) islands’ sporadic occurrence among closely related strains. The latter principlemore » is employed in both an algorithm (learnedPhyloblocks.pl) and a visualization method (panGenome.pl). Component islander.pl finds islands based on their preference for a particular target gene type. We annotate each tRNA and tmRNA gene, find fragments of each such gene as candidates for the distal ends of islands, and filter candidates to remove false positives. Component learnedPhyloblocks.pl uses islands found by islander.pl and other methods as a training set to find new islands. Reference genomes are aligned using mugsy, then the “phylotypes” or patterns of occurrence in the reference set are determined for each position in the target genome, and those phylotypes most enriched in the training set of islands are followed to detect yet more islands. Component panGenome.pl produces a big-data visualization of the chromosomally-ordered “pan-genome”, that includes every gene of every reference genome (x-axis, pan-genome order; y-axis, reference genomes; color-coding, gene presence/absence etc.), islands appearing as dark patches.« less

  9. Electrical spin injection using GaCrN in a GaN based spin light emitting diode

    SciTech Connect

    Banerjee, D.; Ganguly, S.; Saha, D.; Adari, R.; Sankaranarayan, S.; Kumar, A.; Aldhaheri, R. W.; Hussain, M. A.; Balamesh, A. S.

    2013-12-09

    We have demonstrated electrical spin-injection from GaCrN dilute magnetic semiconductor (DMS) in a GaN-based spin light emitting diode (spin-LED). The remanent in-plane magnetization of the thin-film semiconducting ferromagnet has been used for introducing the spin polarized electrons into the non-magnetic InGaN quantum well. The output circular polarization obtained from the spin-LED closely follows the normalized in-plane magnetization curve of the DMS. A saturation circular polarization of ?2.5% is obtained at 200?K.

  10. Microscopic, electrical and optical studies on InGaN/GaN quantum wells based LED devices

    SciTech Connect

    Mutta, Geeta Rani; Venturi, Giulia; Castaldini, Antonio; Cavallini, Anna

    2014-02-21

    We report here on the micro structural, electronic and optical properties of a GaN-based InGaN/GaN MQW LED grown by the MOVPE method. The present study shows that the threading dislocations present in these LED structures are terminated as V pits at the surface and have an impact on the electrical and optical activity of these devices. It has been pointed that these dislocations were of edge, screw and mixed types. EBIC maps suggest that the electrically active defects are screw and mixed dislocations and behave as nonradiative recombinant centres.

  11. Effects of light illumination on electron velocity of AlGaN/GaN heterostructures under high electric field

    SciTech Connect

    Guo, Lei; Yang, Xuelin Cheng, Jianpeng; Sang, Ling; Xu, Fujun; Tang, Ning; Feng, Zhihong; Lv, Yuanjie; Wang, Xinqiang; Shen, B.; Ge, Weikun

    2014-12-15

    We have investigated the variation of electron velocity in AlGaN/GaN heterostructures depending on illuminating light intensity and wavelength. It is shown that the electron velocity at high electric field increases under above-band light illumination. This electron velocity enhancement is found to be related to the photo-generated cold holes which interact with hot electrons and thus accelerate the energy relaxation at high electric field. The results suggest an alternative way to improve the electron energy relaxation rate and hence the electron velocity in GaN based heterostructures.

  12. High-power InGaAs/GaAs quantum-well laser with enhanced broad spectrum of stimulated emission

    SciTech Connect

    Wang, Huolei; Yu, Hongyan; Zhou, Xuliang; Kan, Qiang; Yuan, Lijun; Wang, Wei; Pan, Jiaoqing; Chen, Weixi; Ding, Ying

    2014-10-06

    We report the demonstration of an InGaAs/GaAs quantum well (QW) broadband stimulated emission laser with a structure that integrated a GaAs tunnel junction with two QW active regions. The laser exhibits ultrabroad lasing spectral coverage of ?51?nm at a center wavelength of 1060?nm with a total emission power of 790 mW, corresponding to a high average spectral power density of 15.5 mW/nm, under pulsed current conditions. Compared to traditional lasers, this laser with an asymmetric separate-confinement heterostructure shows broader lasing bandwidth and higher spectral power density.

  13. Islander: A database of precisely mapped genomic islands in tRNA and tmRNA genes

    SciTech Connect

    Hudson, Corey M.; Lau, Britney Y.; Williams, Kelly P.

    2014-11-05

    Genomic islands are mobile DNAs that are major agents of bacterial and archaeal evolution. Integration into prokaryotic chromosomes usually occurs site-specifically at tRNA or tmRNA gene (together, tDNA) targets, catalyzed by tyrosine integrases. This splits the target gene, yet sequences within the island restore the disrupted gene; the regenerated target and its displaced fragment precisely mark the endpoints of the island. We applied this principle to search for islands in genomic DNA sequences. Our algorithm identifies tDNAs, finds fragments of those tDNAs in the same replicon and removes unlikely candidate islands through a series of filters. A search for islands in 2168 whole prokaryotic genomes produced 3919 candidates. The website Islander (recently moved to http://bioinformatics.sandia.gov/islander/) presents these precisely mapped candidate islands, the gene content and the island sequence. The algorithm further insists that each island encode an integrase, and attachment site sequence identity is carefully noted; therefore, the database also serves in the study of integrase site-specificity and its evolution.

  14. Characterization of Cu(In,Ga)Se2 (CIGS) films with varying gallium ratios

    DOE PAGES [OSTI]

    Claypoole, Jesse; Peace, Bernadette; Sun, Neville; Dwyer, Dan; Eisaman, Matthew D.; Haldar, Pradeep; Efstathiadis, Harry

    2015-09-05

    Cu(In1-x,Gax)Se2 (CIGS) absorber layers were deposited on molybdenum (Mo) coated soda-lime glass substrates with varying Ga content (described as Ga/(In+Ga) ratios) with respect to depth. As the responsible mechanisms for the limitation of the performance of the CIGS solar cells with high Ga contents are not well understood, the goal of this work was to investigate different properties of CIGS absorber films with Ga/(In+Ga) ratios varied between 0.29 and 0.41 (as determined by X-ray florescence spectroscopy (XRF)) in order to better understand the role that the Ga content has on film quality. The Ga grading in the CIGS layer hasmore » the effect causing a higher bandgap toward the surface and Mo contact while the band gap in the middle of the CIGS layer is lower. Also, a wider and larger Ga/(In+Ga) grading dip located deeper in the CIGS absorber layers tend to produce larger grains in the regions of the films that have lower Ga/(In+Ga) ratios. It was found that surface roughness decreases from 51.2 nm to 41.0 nm with increasing Ga/(In+Ga) ratios. However, the surface roughness generally decreases if the Ga grading occurs deeper in the absorber layer.« less

  15. Radiation damage of GaAs thin-film solar cells on Si substrates

    SciTech Connect

    Itoh, Y.; Yamaguchi, M.; Nishioka, T.; Yamamoto, A.

    1987-01-15

    1-MeV electron irradiation damages in GaAs thin-film solar cells on Si substrates are examined for the first time. Damage constant for minority-carrier diffusion length in GaAs heteroepitaxial films on Si substrates is found to be the same as that in GaAs homoepitaxial films on GaAs substrates. This agreement suggests that GaAs/Si has the same defect introduction rate with radiation as GaAs/GaAs. The degradation of GaAs solar cells on Si with electron irradiation is less than that of GaAs solar cells on GaAs, because in the present, GaAs films on Si substrates have lower minority-carrier diffusion length compared to GaAs films on GaAs and these films are insensitive to radiation. The p/sup +/-p/sup +/-n AlGaAs-GaAs heteroface solar cell with junction depth of about 0.3 ..mu..m is concluded to be useful for a high-efficiency and radiation-resistant solar cell fabricated on a Si substrate.

  16. p-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas

    SciTech Connect

    Zhang, Zi-Hui; Tiam Tan, Swee; Kyaw, Zabu; Liu, Wei; Ji, Yun; Ju, Zhengang; Zhang, Xueliang [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore) [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Wei Sun, Xiao, E-mail: EXWSUN@ntu.edu.sg [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electronics and Electrical Engineering, South University of Science and Technology of China, Shenzhen, Guangdong 518055 (China); Volkan Demir, Hilmi, E-mail: VOLKAN@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electrical and Electronics, UNAM-Institute of Material Science and Nanotechnology, Bilkent University, Ankara TR-06800 (Turkey); Department of Physics, UNAM-Institute of Material Science and Nanotechnology, Bilkent University, Ankara TR-06800 (Turkey)

    2013-12-23

    Here, GaN/Al{sub x}Ga{sub 1-x}N heterostructures with a graded AlN composition, completely lacking external p-doping, are designed and grown using metal-organic-chemical-vapour deposition (MOCVD) system to realize three-dimensional hole gas (3DHG). The existence of the 3DHG is confirmed by capacitance-voltage measurements. Based on this design, a p-doping-free InGaN/GaN light-emitting diode (LED) driven by the 3DHG is proposed and grown using MOCVD. The electroluminescence, which is attributed to the radiative recombination of injected electrons and holes in InGaN/GaN quantum wells, is observed from the fabricated p-doping-free devices. These results suggest that the 3DHG can be an alternative hole source for InGaN/GaN LEDs besides common Mg dopants.

  17. Trap states in enhancement-mode double heterostructures AlGaN/GaN high electron mobility transistors with different GaN channel layer thicknesses

    SciTech Connect

    He, Yunlong; Wang, Chong Li, Xiangdong; Zhao, Shenglei; Mi, Minhan; Pei, Jiuqing; Zhang, Jincheng; Hao, Yue; Li, Peixian; Ma, Xiaohua

    2015-08-10

    This is the report on trap states in enhancement-mode AlGaN/GaN/AlGaN double heterostructures high electron mobility transistors by fluorine plasma treatment with different GaN channel layer thicknesses. Compared with the thick GaN channel layer sample, the thin one has smaller 2DEG concentration, lower electron mobility, lower saturation current, and lower peak transconductance, but it has a higher threshold voltage of 1.2 V. Deep level transient spectroscopy measurements are used to obtain the accurate capture cross section of trap states. By frequency dependent capacitance and conductance measurements, the trap state density of (1.98–2.56) × 10{sup 12 }cm{sup −2} eV{sup −1} is located at E{sub T} in a range of (0.37–0.44) eV in the thin sample, while the trap state density of (2.3–2.92) × 10{sup 12 }cm{sup −2} eV{sup −1} is located at E{sub T} in a range of (0.33–0.38) eV in the thick one. It indicates that the trap states in the thin sample are deeper than those in the thick one.

  18. Linear and nonlinear optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell spherical quantum dot

    SciTech Connect

    Emre Kavruk, Ahmet E-mail: aekavruk@gmail.com; Koc, Fatih; Sahin, Mehmet E-mail: mehsahin@gmail.com

    2013-11-14

    In this work, the optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell quantum dot heterostructure have been studied as a function of Al doping concentrations for cases with and without a hydrogenic donor atom. It has been observed that the absorption coefficient strength and/or resonant absorption wavelength can be adjusted by changing the Al content of inner-barrier and/or outer-barrier regions. Besides, it has been shown that the donor atom has an important effect on the control of the electronic and optical properties of the structure. The results have been presented as a function of the Al contents of the inner-barrier x and outer-barrier y regions and probable physical reasons have been discussed.

  19. Evaporation-based Ge/.sup.68 Ga Separation

    DOEpatents

    Mirzadeh, Saed; Whipple, Richard E.; Grant, Patrick M.; O'Brien, Jr., Harold A.

    1981-01-01

    Micro concentrations of .sup.68 Ga in secular equilibrium with .sup.68 Ge in strong aqueous HCl solution may readily be separated in ionic form from the .sup.68 Ge for biomedical use by evaporating the solution to dryness and then leaching the .sup.68 Ga from the container walls with dilute aqueous solutions of HCl or NaCl. The chloro-germanide produced during the evaporation may be quantitatively recovered to be used again as a source of .sup.68 Ga. If the solution is distilled to remove any oxidizing agents which may be present as impurities, the separation factor may easily exceed 10.sup.5. The separation is easily completed and the .sup.68 Ga made available in ionic form in 30 minutes or less.

  20. Intermixing of InGaAs/GaAs Quantum Well Using Multiple Cycles Annealing Cu-doped SiO2

    SciTech Connect

    Hongpinyo, V; Ding, Y H; Dimas, C E; Wang, Y; Ooi, B S; Qiu, W; Goddard, L L; Behymer, E M; Cole, G D; Bond, T C

    2008-06-11

    The authors investigate the effect of intermixing in InGaAs/GaAs quantum well structure using Cu-doped SiO{sub 2}. The incorporation of Cu into the silica film yields larger bandgap shift than typical impurity-free vacancy diffusion (IFVD) method at a lower activation temperature. We also observe enhancement of the photoluminescence (PL) signal from the intermixed InGaAs/GaAs quantum well structure after being cycle-annealed at 850 C.

  1. Towards Molecular Dynamics Simulations of InGaN Nanostructures.

    Office of Scientific and Technical Information (OSTI)

    (Conference) | SciTech Connect Towards Molecular Dynamics Simulations of InGaN Nanostructures. Citation Details In-Document Search Title: Towards Molecular Dynamics Simulations of InGaN Nanostructures. Abstract not provided. Authors: Zhou, Xiaowang ; Jones, Reese E. Publication Date: 2015-05-01 OSTI Identifier: 1258140 Report Number(s): SAND2015-4035C 584006 DOE Contract Number: AC04-94AL85000 Resource Type: Conference Resource Relation: Conference: Proposed for presentation at the 2015

  2. Towards Molecular Dynamics Simulations of InGaN Nanostructures.

    Office of Scientific and Technical Information (OSTI)

    (Conference) | SciTech Connect Towards Molecular Dynamics Simulations of InGaN Nanostructures. Citation Details In-Document Search Title: Towards Molecular Dynamics Simulations of InGaN Nanostructures. Abstract not provided. Authors: Zhou, Xiaowang ; Jones, Reese E. Publication Date: 2015-05-01 OSTI Identifier: 1258265 Report Number(s): SAND2015-4035C 584006 DOE Contract Number: AC04-94AL85000 Resource Type: Conference Resource Relation: Conference: Proposed for presentation at the 2015

  3. Recovery Act State Memos Mariana Islands

    Energy.gov [DOE] (indexed site)

    Mariana Islands For questions about DOE's Recovery Act activities, please contact the DOE Recovery Act Clearinghouse: 1-888-DOE-RCVY (888-363-7289), Monday through Friday, 9 a.m. to 7 p.m. Eastern Time https://recoveryclearinghouse.energy.gov/contactUs.htm. All numbers and projects listed as of June 1, 2010 TABLE OF CONTENTS RECOVERY ACT SNAPSHOT................................................................................... 1 FUNDING ALLOCATION

  4. Recovery Act State Memos Rhode Island

    Energy.gov [DOE] (indexed site)

    Rhode Island For questions about DOE's Recovery Act activities, please contact the DOE Recovery Act Clearinghouse: 1-888-DOE-RCVY (888-363-7289), Monday through Friday, 9 a.m. to 7 p.m. Eastern Time https://recoveryclearinghouse.energy.gov/contactUs.htm. All numbers and projects listed as of June 1, 2010 TABLE OF CONTENTS RECOVERY ACT SNAPSHOT................................................................................... 1 FUNDING ALLOCATION

  5. Recovery Act State Memos Virgin Islands

    Energy.gov [DOE] (indexed site)

    Virgin Islands For questions about DOE's Recovery Act activities, please contact the DOE Recovery Act Clearinghouse: 1-888-DOE-RCVY (888-363-7289), Monday through Friday, 9 a.m. to 7 p.m. Eastern Time https://recoveryclearinghouse.energy.gov/contactUs.htm. All numbers and projects listed as of June 1, 2010 TABLE OF CONTENTS RECOVERY ACT SNAPSHOT................................................................................... 1 FUNDING ALLOCATION

  6. Suggested guidelines for anti-islanding screening.

    SciTech Connect

    Ellis, Abraham; Ropp, Michael

    2012-02-01

    As increasing numbers of photovoltaic (PV) systems are connected to utility systems, distribution engineers are becoming increasingly concerned about the risk of formation of unintentional islands. Utilities desire to keep their systems secure, while not imposing unreasonable burdens on users wishing to connect PV. However, utility experience with these systems is still relatively sparse, so distribution engineers often are uncertain as to when additional protective measures, such as direct transfer trip, are needed to avoid unintentional island formation. In the absence of such certainty, utilities must err on the side of caution, which in some cases may lead to the unnecessary requirement of additional protection. The purpose of this document is to provide distribution engineers and decision makers with guidance on when additional measures or additional study may be prudent, and also on certain cases in which utilities may allow PV installations to proceed without additional study because the risk of an unintentional island is extremely low. The goal is to reduce the number of cases of unnecessary application of additional protection, while giving utilities a basis on which to request additional study in cases where it is warranted.

  7. Laser Gain and Threshold Properties in Compressive-Strained and Lattice-Matched GaInNAs/GaAs Quantum Wells

    SciTech Connect

    Chow, W.W.; Jones, E.D.; Modine, N.A.; Allerman, A.A.; Kurtz, S.R.

    1999-08-04

    The optical gain spectra for compressive-strained and lattice-matched GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of lasing threshold current density for different GAInNAs/GaAs laser structures.

  8. Broadband control of emission wavelength of InAs/GaAs quantum dots by GaAs capping temperature

    SciTech Connect

    Kaizu, Toshiyuki; Matsumura, Takuya; Kita, Takashi

    2015-10-21

    We investigated the effects of the GaAs capping temperature on the morphological and photoluminescence (PL) properties of InAs quantum dots (QDs) on GaAs(001). The broadband tuning of the emission wavelength from 1.1 to 1.3 μm was achieved at room temperature by only adjusting the GaAs capping temperature. As the capping temperature was decreased, the QD shrinkage due to In desorption and In-Ga intermixing during the capping process was suppressed. This led to QDs with a high aspect ratio, and resultantly, the emission wavelength shifted toward the longer-wavelength side. In addition, the linearly polarized PL intensity elucidated anisotropic characteristics reflecting the shape anisotropy of the embedded QDs, in which a marked change in polarization anisotropy occurred at capping temperatures lower than 460 °C.

  9. Polarization field engineering of GaN/AlN/AlGaN superlattices for enhanced thermoelectric properties

    SciTech Connect

    Sztein, Alexander; Bowers, John E.; DenBaars, Steven P.; Nakamura, Shuji

    2014-01-27

    A novel polarization field engineering based strategy to simultaneously achieve high electrical conductivity and low thermal conductivity in thermoelectric materials is demonstrated. Polarization based electric fields are used to confine electrons into two-dimensional electron gases in GaN/AlN/Al{sub 0.2}Ga{sub 0.8}N superlattices, resulting in improved electron mobilities as high as 1176 cm{sup 2}/Vs and in-plane thermal conductivity as low as 8.9 W/mK. The resulting room temperature ZT values reach 0.08, a factor of four higher than InGaN and twelve higher than GaN, demonstrating the potential benefits of this polarization based engineering strategy for improving the ZT and efficiencies of thermoelectric materials.

  10. A new InGaP/GaAs tunneling heterostructure-emitter bipolar transistor (T-HEBT)

    SciTech Connect

    Tsai, Jung-Hui; Lee, Ching-Sung; Lour, Wen-Shiung; Ma, Yung-Chun; Ye, Sheng-Shiun

    2011-05-15

    Excellent characteristics of an InGaP/GaAs tunneling heterostructure-emitter bipolar transistor (T-HEBT) are first demonstrated. The insertion of a thin n-GaAs emitter layer between tynneling confinement and base layers effectivelty eliminates the potential spike at base-emitter junction and reduces the collector-emitter offset voltage, while the thin InGaP tunneling confinement layer is employed to reduce the transporting time across emitter region for electrons and maintain the good confinement effect for holes. Experimentally, the studied T-HEBN exhibits a maximum current gain of 285, a relatively low offset voltage of 40 mW, and a current-gain cutoff frequency of 26.4 GHz.

  11. The first principle study of Ni{sub 2}ScGa and Ni{sub 2}TiGa

    SciTech Connect

    zduran, Mustafa; Turgut, Kemal; Arikan, Nihat; ?yigr, Ahmet; Candan, Abdullah

    2014-10-06

    We computed the electronic structure, elastic moduli, vibrational properties, and Ni{sub 2}TiGa and Ni{sub 2}ScGa alloys in the cubic L2{sub 1} structure. The obtained equilibrium lattice constants of these alloys are in good agreement with available data. In cubic systems, there are three independent elastic constants, namely C{sub 11}, C{sub 12} and C{sub 44}. We calculated elastic constants in L2{sub 1} structure for Ni{sub 2}TiGa and Ni{sub 2}ScGa using the energy-strain method. The electronic band structure, total and partial density of states for these alloys were investigated within density functional theory using the plane-wave pseudopotential method implemented in Quantum-Espresso program package. From band structure, total and projected density of states, we observed metallic characters of these compounds. The electronic calculation indicate that the predominant contributions of the density of states at Fermi level come from the Ni 3d states and Sc 3d states for Ni{sub 2}TiGa, Ni 3d states and Sc 3d states for Ni{sub 2}ScGa. The computed density of states at Fermi energy are 2.22 states/eV Cell for Ni{sub 2}TiGa, 0.76 states/eV Cell for Ni{sub 2}ScGa. The vibrational properties were obtained using a linear response in the framework at the density functional perturbation theory. For the alloys, the results show that the L2{sub 1} phase is unstable since the phonon calculations have imagine modes.

  12. Structural transformations in amorphous ↔ crystalline phase change of Ga-Sb alloys

    SciTech Connect

    Edwards, T. G.; Sen, S.; Hung, I.; Gan, Z.; Kalkan, B.; Raoux, S.

    2013-12-21

    Ga-Sb alloys with compositions ranging between ∼12 and 50 at. % Ga are promising materials for phase change random access memory applications. The short-range structures of two such alloys with compositions Ga{sub 14}Sb{sub 86} and Ga{sub 46}Sb{sub 54} are investigated, in their amorphous and crystalline states, using {sup 71}Ga and {sup 121}Sb nuclear magnetic resonance spectroscopy and synchrotron x-ray diffraction. The Ga and Sb atoms are fourfold coordinated in the as-deposited amorphous Ga{sub 46}Sb{sub 54} with nearly 40% of the constituent atoms being involved in Ga-Ga and Sb-Sb homopolar bonding. This necessitates extensive bond switching and elimination of homopolar bonds during crystallization. On the other hand, Ga and Sb atoms are all threefold coordinated in the as-deposited amorphous Ga{sub 14}Sb{sub 86}. Crystallization of this material involves phase separation of GaSb domains in Sb matrix and a concomitant increase in the Ga coordination number from 3 to 4. Results from crystallization kinetics experiments suggest that the melt-quenching results in the elimination of structural “defects” such as the homopolar bonds and threefold coordinated Ga atoms in the amorphous phases of these alloys, thereby rendering them structurally more similar to the corresponding crystalline states compared to the as-deposited amorphous phases.

  13. Islander: A database of precisely mapped genomic islands in tRNA and tmRNA genes

    DOE PAGES [OSTI]

    Hudson, Corey M.; Lau, Britney Y.; Williams, Kelly P.

    2014-11-05

    Genomic islands are mobile DNAs that are major agents of bacterial and archaeal evolution. Integration into prokaryotic chromosomes usually occurs site-specifically at tRNA or tmRNA gene (together, tDNA) targets, catalyzed by tyrosine integrases. This splits the target gene, yet sequences within the island restore the disrupted gene; the regenerated target and its displaced fragment precisely mark the endpoints of the island. We applied this principle to search for islands in genomic DNA sequences. Our algorithm identifies tDNAs, finds fragments of those tDNAs in the same replicon and removes unlikely candidate islands through a series of filters. A search for islandsmore » in 2168 whole prokaryotic genomes produced 3919 candidates. The website Islander (recently moved to http://bioinformatics.sandia.gov/islander/) presents these precisely mapped candidate islands, the gene content and the island sequence. The algorithm further insists that each island encode an integrase, and attachment site sequence identity is carefully noted; therefore, the database also serves in the study of integrase site-specificity and its evolution.« less

  14. Atomic-column scanning transmission electron microscopy analysis of misfit dislocations in GaSb/GaAs quantum dots

    DOE PAGES [OSTI]

    Chisholm, Matthew F.; Fernandez-Delgado, N.; Herrera, M.; Kamarudin, M. A.; Zhuang, Q. D.; Hayne, M.; Molina, S. I.

    2016-05-17

    The structural quality of GaSb/GaAs quantum dots (QDs) has been analyzed at atomic scale by aberration-corrected high-angle annular dark-field scanning transmission electron microscopy. In particular, we have studied the misfit dislocations that appear because of the high-lattice mismatch in the heterostructure. Our results have shown the formation of Lomer dislocations not only at the interface between the GaSb QDs and the GaAs substrate, but also at the interface with the GaAs capping layer, which is not a frequent observation. The analysis of these dislocations points to the existence of chains of dislocation loops around the QDs. The dislocation core ofmore » the observed defects has been characterized, showing that they are reconstructed Lomer dislocations, which have less distortion at the dislocation core in comparison to unreconstructed ones. As a result, strain measurements using geometric phase analysis show that these dislocations may not fully relax the strain due to the lattice mismatch in the GaSb QDs.« less

  15. Efficient carrier relaxation and fast carrier recombination of N-polar InGaN/GaN light emitting diodes

    SciTech Connect

    Feng, Shih-Wei Liao, Po-Hsun; Leung, Benjamin; Han, Jung; Yang, Fann-Wei; Wang, Hsiang-Chen

    2015-07-28

    Based on quantum efficiency and time-resolved electroluminescence measurements, the effects of carrier localization and quantum-confined Stark effect (QCSE) on carrier transport and recombination dynamics of Ga- and N-polar InGaN/GaN light-emitting diodes (LEDs) are reported. The N-polar LED exhibits shorter ns-scale response, rising, delay, and recombination times than the Ga-polar one does. Stronger carrier localization and the combined effects of suppressed QCSE and electric field and lower potential barrier acting upon the forward bias in an N-polar LED provide the advantages of more efficient carrier relaxation and faster carrier recombination. By optimizing growth conditions to enhance the radiative recombination, the advantages of more efficient carrier relaxation and faster carrier recombination in a competitive performance N-polar LED can be realized for applications of high-speed flash LEDs. The research results provide important information for carrier transport and recombination dynamics of an N-polar InGaN/GaN LED.

  16. Effects of high-temperature AIN buffer on the microstructure of AlGaN/GaN HEMTs

    SciTech Connect

    Coerekci, S.; Oeztuerk, M. K.; Yu, Hongbo; Cakmak, M.; Oezcelik, S.; Oezbay, E.

    2013-06-15

    Effects on AlGaN/GaN high-electron-mobility transistor structure of a high-temperature AlN buffer on sapphire substrate have been studied by high-resolution x-ray diffraction and atomic force microscopy techniques. The buffer improves the microstructural quality of GaN epilayer and reduces approximately one order of magnitude the edge-type threading dislocation density. As expected, the buffer also leads an atomically flat surface with a low root-mean-square of 0.25 nm and a step termination density in the range of 10{sup 8} cm{sup -2}. Due to the high-temperature buffer layer, no change on the strain character of the GaN and AlGaN epitaxial layers has been observed. Both epilayers exhibit compressive strain in parallel to the growth direction and tensile strain in perpendicular to the growth direction. However, an high-temperature AlN buffer layer on sapphire substrate in the HEMT structure reduces the tensile stress in the AlGaN layer.

  17. SURFACE REMEDIATION IN THE ALEUTIAN ISLANDS: A CASE STUDY OF AMCHITKA ISLAND, ALASKA

    SciTech Connect

    Giblin, M. O.; Stahl, D. C.; Bechtel, J. A.

    2002-02-25

    Amchitka Island, Alaska, was at one time an integral player in the nation's defense program. Located in the North Pacific Ocean in the Aleutian Island archipelago, the island was intermittently inhabited by several key government agencies, including the U.S. Army, the U.S. Atomic Energy Commission (predecessor agency to the U.S. Department of Energy), and the U.S. Navy. Since 1993, the U.S. Department of Energy (DOE) has conducted extensive investigations on Amchitka to determine the nature and extent of contamination resulting from historic nuclear testing. The uninhabited island was the site of three high-yield nuclear tests from 1965 to 1971. These test locations are now part of the DOE's National Nuclear Security Administration Nevada Operations Office's Environmental Management Program. In the summer of 2001, the DOE launched a large-scale remediation effort on Amchitka to perform agreed-upon corrective actions to the surface of the island. Due to the lack of resources available on Amchitka and logistical difficulties with conducting work at such a remote location, the DOE partnered with the Navy and U.S. Army Corps of Engineers (USACE) to share certain specified costs and resources. Attempting to negotiate the partnerships while organizing and implementing the surface remediation on Amchitka proved to be a challenging endeavor. The DOE was faced with unexpected changes in Navy and USACE scope of work, accelerations in schedules, and risks associated with construction costs at such a remote location. Unfavorable weather conditions also proved to be a constant factor, often slowing the progress of work. The Amchitka Island remediation project experience has allowed the DOE to gain valuable insights into how to anticipate and mitigate potential problems associated with future remediation projects. These lessons learned will help the DOE in conducting future work more efficiently, and can also serve as a guide for other agencies performing similar work.

  18. Making it pay in Athens, GA

    SciTech Connect

    Malloy, M.G.

    1997-04-01

    The materials recovery facility (MRF) in Athens, GA, is a well-fed recycling facility. But, if the local government has its way, it will be even better fed in the near future. The Athens-Clarke County (ACC) regional municipality in which the facility resides has a put-or-pay contract with the plant`s owner/operator, under which the more it feeds the MRF, the more money it receives in return, through the sale of recycled end products. The ACC Solid Waste Department uses a volume-based waste collection system that encourages residents to recycle--the more they recycle, the less trash they have to put out, and the less they pay each month. The Athens facility, which will be a featured site tour at next month`s WasteExpo `97 in nearby Atlanta, had its ground-breaking two years ago, in April 1995. ACC is responsible for delivering material--or seeing that recyclables are delivered--to the MRF, which is owned and operated by Resource Recovery Systems (RRS, Centerbrook, Conn.). Over the past year, ACC has stepped up various incentives for businesses to recycle and send their recyclables to the facility, including instituting pilot programs for commercial interests that offer them versions of volume-based collection similar to that done by residents.

  19. High Voltage GaN Schottky Rectifiers

    SciTech Connect

    CAO,X.A.; CHO,H.; CHU,S.N.G.; CHUO,C.-C.; CHYI,J.-I.; DANG,G.T.; HAN,JUNG; LEE,C.-M.; PEARTON,S.J.; REN,F.; WILSON,R.G.; ZHANG,A.P.

    1999-10-25

    Mesa and planar GaN Schottky diode rectifiers with reverse breakdown voltages (V{sub RB}) up to 550V and >2000V, respectively, have been fabricated. The on-state resistance, R{sub ON}, was 6m{Omega}{center_dot} cm{sup 2} and 0.8{Omega}cm{sup 2}, respectively, producing figure-of-merit values for (V{sub RB}){sup 2}/R{sub ON} in the range 5-48 MW{center_dot}cm{sup -2}. At low biases the reverse leakage current was proportional to the size of the rectifying contact perimeter, while at high biases the current was proportional to the area of this contact. These results suggest that at low reverse biases, the leakage is dominated by the surface component, while at higher biases the bulk component dominates. On-state voltages were 3.5V for the 550V diodes and {ge}15 for the 2kV diodes. Reverse recovery times were <0.2{micro}sec for devices switched from a forward current density of {approx}500A{center_dot}cm{sup -2} to a reverse bias of 100V.

  20. ARM - Field Campaign - Macquarie Island Cloud and Radiation Experiment

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    (MICRE): Ice Nucleating Particle Measurements govCampaignsMacquarie Island Cloud and Radiation Experiment (MICRE): Ice Nucleating Particle Measurements Related Campaigns Macquarie Island Cloud and Radiation Experiment (MICRE) 2016.03.01, Marchand, OSC Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send Campaign : Macquarie Island Cloud and Radiation Experiment (MICRE): Ice Nucleating Particle Measurements 2017.03.01 - 2018.03.31 Lead Scientist :

  1. Asian American Pacific Islander Heritage Month - HQ | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Asian American Pacific Islander Heritage Month - HQ Asian American Pacific Islander Heritage Month - HQ Asian American Pacific Islander Heritage Month - HQ May 15, 2014 3:00PM to 5:00PM EDT Department of Energy 1000 Independence Ave SW, Main Auditorium, Washington DC Speakers include Robert Gee, President of Asian Americans in Energy, the Environment, and Commerce and Ambassador to the Minorities in Energy Initiative; Dr. James Meng, Executive Director of the Naval Sea System Command; Afroze

  2. Energy Incentive Programs, Rhode Island | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Rhode Island Energy Incentive Programs, Rhode Island Updated August 2015 Rhode Island's utilities budgeted over $100 million for energy efficiency and load management programs in 2014. What public-purpose-funded energy efficiency programs are available in my state? A system benefits charge of at least 2 mills/kWh for energy efficiency programs and 0.3 mills/kWh for renewable energy programs is collected from customers. National Grid provides a variety of energy efficiency rebates and services to

  3. Aleutian Pribilof Islands Association - 2012 Project | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Aleutian Pribilof Islands Association - 2012 Project Aleutian Pribilof Islands Association - 2012 Project Summary Residents of False Pass have long known the power of the water that rushes daily through Isanotski Pass. A 2009 study funded by the Alaska Energy Authority confirmed the need to study more fully the area's potential for tidal power. To this end, and to address their fossil fuel reduction goal, many Aleut organizations, through the Aleutian Pribilof Island Association Inc. (APIA),

  4. Northern Mariana Islands Recovery Act State Memo | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Northern Mariana Islands Recovery Act State Memo Northern Mariana Islands Recovery Act State Memo The American Recovery & Reinvestment Act (ARRA) is making a meaningful down payment on the nation's energy and environmental future. Through these investments, Northern Mariana businesses, non-profits, and local governments are creating quality jobs today and positioning Florida to play an important role in the new energy economy of the future. Northern Mariana Islands Recovery Act State Memo

  5. Energy Transition Initiative: Islands Playbook | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Energy Transition Initiative: Islands Playbook Energy Transition Initiative: Islands Playbook The Island Energy Playbook provides an action-oriented guide to successfully initiating, planning, and completing a transition to an energy system that primarily relies on local resources to eliminate a dependence on one or two imported fuels. It is intended to serve as a readily available framework that any community can adapt to organize its own energy transition effort. Energy Transition Initiative:

  6. Nano-scale luminescence characterization of individual InGaN/GaN quantum wells stacked in a microcavity using scanning transmission electron microscope cathodoluminescence

    SciTech Connect

    Schmidt, Gordon Mller, Marcus; Veit, Peter; Bertram, Frank; Christen, Jrgen; Glauser, Marlene; Carlin, Jean-Franois; Cosendey, Gatien; Butt, Raphal; Grandjean, Nicolas

    2014-07-21

    Using cathodoluminescence spectroscopy directly performed in a scanning transmission electron microscope at liquid helium temperatures, the optical and structural properties of a 62 InGaN/GaN multiple quantum well embedded in an AlInN/GaN based microcavity are investigated at the nanometer scale. We are able to spatially resolve a spectral redshift between the individual quantum wells towards the surface. Cathodoluminescence spectral linescans allow directly visualizing the critical layer thickness in the quantum well stack resulting in the onset of plastic relaxation of the strained InGaN/GaN system.

  7. Thermoelectric properties and nonstoichiometry of GaGeTe

    SciTech Connect

    Drasar, C.; Kucek, V.; Benes, L.; Lostak, P.; Vlcek, M.

    2012-09-15

    Polycrystalline samples of composition Ga{sub 1+x}Ge{sub 1-x}Te (x=-0.03 Division-Sign 0.07) and GaGeTe{sub 1-y} (y=-0.02 Division-Sign 0.02) were synthesized from elements of 5 N purity using a solid state reaction. The products of synthesis were identified by X-ray diffraction; phase purity and microstructure were examined by EDX/SEM. Samples for measurement of transport properties were prepared using hot-pressing. They were characterized by measurement of electrical conductivity, the Hall coefficient, and the Seebeck coefficient over a temperature range 80-480 K and of thermal conductivity over a temperature range 300-580 K. All samples show p-type conductivity. We discuss the influence of stoichiometry on the phase purity of the samples and on free carrier concentration. The investigation of thermoelectric properties shows that the power factor of these samples is low compared to state-of-the-art materials at room temperature but increases distinctly with temperature. - Graphical abstract: Structure and preparation of GaGeTe. Electrical conductivity {sigma}, the Hall coefficient R{sub H}, the Seebeck coefficient S and thermal conductivity {kappa} as a function of temperature for the Ga{sub 1.01}Ge{sub 0.99}Te{sub 0.99} sample. Highlights: Black-Right-Pointing-Pointer We explore thermoelectric and transport properties of Ga{sub 1+x}Ge{sub 1-x}Te and GaGeTe{sub 1-y}. Black-Right-Pointing-Pointer GaGeTe is p-type degenerate semiconductor; the hole concentration increase with x and y. Black-Right-Pointing-Pointer Maximum power factor {sigma}S{sup 2}=3.6 Multiplication-Sign 10{sup -4} Wm{sup -1} K{sup -2} at 475 K.

  8. Project Fact Sheet Long Island HTS Power Cable Superconducting

    Energy Saver

    HTS power cables are used for electric transmission and distribution. The Long Island cable carries electricity at transmission voltage, which is how power is delivered over long ...

  9. Urban Surfaces and Heat Island Mitigation Potentials (Journal...

    Office of Scientific and Technical Information (OSTI)

    Journal Article: Urban Surfaces and Heat Island Mitigation Potentials Citation Details ... and urban vegetation (trees, grass, shrubs) on the meteorology and air quality of a city. ...

  10. Macquarie Island Cloud and Radiation Experiment Science Objective

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    will conduct a two-year research campaign, beginning in spring 2016, to obtain these data from Macquarie Island, ideally situated between New Zealand, Australia, and Antarctica. ...

  11. ARM - PI Product - Nauru Island Effect Detection Data Set

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    ProductsNauru Island Effect Detection Data Set ARM Data Discovery Browse Data Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send PI Product : Nauru Island Effect Detection Data Set During Nauru99 it was noted that the island was producing small clouds that advected over the ARM site. The Nauru Island Effect Study was run for 1.5 years and the methodology developed to detect the occurrence. Nauru ACRF downwelling SW, wind direction, and air

  12. Rhode Island Energy Group LLC | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Group LLC Jump to: navigation, search Name: Rhode Island Energy Group LLC Address: PO Box 340 Place: Portsmouth Zip: 2871 Region: United States Sector: Marine and Hydrokinetic...

  13. South Jersey Energy Company (Rhode Island) | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Place: Rhode Island Website: www1.nationalgridus.comRhodeI Twitter: @nationalgridus Facebook: https:www.facebook.comnationalgrid Outage Hotline: 1-800-465-1212 Outage Map:...

  14. Liberty Power Corp. (Rhode Island) | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Place: Rhode Island Website: www.libertypowercorp.combusin Twitter: @libertypower Facebook: https:www.facebook.comLibertyPowerCorp Outage Hotline: 1-800-465-1212 Outage Map:...

  15. Direct Energy Services (Rhode Island) | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Place: Rhode Island Website: www.business.directenergy.com Twitter: @nationalgridus Facebook: https:www.facebook.comnationalgrid Outage Hotline: 1-800-465-1212 Outage Map:...

  16. Constellation NewEnergy, Inc (Rhode Island) | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Place: Rhode Island Website: www.constellation.compagesde Twitter: @constellationeg Facebook: https:www.facebook.comConstellationEnergy References: EIA Form EIA-861 Final Data...

  17. Glacial Energy Holdings (Rhode Island) | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Holdings Place: Rhode Island Website: www.glacialenergy.com Twitter: @nationalgridus Facebook: https:www.facebook.comnationalgrid Outage Hotline: 1-800-465-1212 Outage Map:...

  18. Long Island, Maine: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Long Island, Maine: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 43.6842491, -70.1711588 Show Map Loading map... "minzoom":false,"mappingser...

  19. Rhode Island High Resolution Wind Resource - Datasets - OpenEI...

    OpenEI (Open Energy Information) [EERE & EIA]

    Detailed license and usage information for this dataset Preview Download 50m GIS NREL Rhode Island energy high resoltuion renewable shapefile wind wind data wind...

  20. Tiverton, Rhode Island: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    County, Rhode Island.1 References US Census Bureau Incorporated place and minor civil division population dataset (All States, all geography) Retrieved from "http:...

  1. Barrington, Rhode Island: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    County, Rhode Island.1 References US Census Bureau Incorporated place and minor civil division population dataset (All States, all geography) Retrieved from "http:...

  2. Rhode Island Renewable Electric Power Industry Net Summer Capacity...

    Energy Information Administration (EIA) (indexed site)

    Rhode Island" "Energy Source",2006,2007,2008,2009,2010 "Geothermal","-","-","-","-","-" "Hydro Conventional",4,4,3,3,3 "Solar","-","-","-","-","-" "Wind","-","-","-","-",2 "Wood...

  3. MHK Projects/Cape Islands Tidal Energy Project | Open Energy...

    OpenEI (Open Energy Information) [EERE & EIA]

    Islands Tidal Energy Project < MHK Projects Jump to: navigation, search << Return to the MHK database homepage Loading map... "minzoom":false,"mappingservice":"googlemaps3","type"...

  4. MHK Projects/Roosevelt Island Tidal Energy RITE | Open Energy...

    OpenEI (Open Energy Information) [EERE & EIA]

    Roosevelt Island Tidal Energy RITE < MHK Projects Jump to: navigation, search << Return to the MHK database homepage Loading map... "minzoom":false,"mappingservice":"googlemaps3",...

  5. MHK Projects/Treat Island Tidal | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Treat Island Tidal < MHK Projects Jump to: navigation, search << Return to the MHK database homepage Loading map... "minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP"...

  6. Comparison of Secondary Islands in Collisional Reconnection to Hall Reconnection

    SciTech Connect

    Shepherd, L. S.; Cassak, P. A.

    2010-07-02

    Large-scale resistive Hall-magnetohydrodynamic simulations of the transition from Sweet-Parker (collisional) to Hall (collisionless) magnetic reconnection are presented; the first to separate secondary islands from collisionless effects. Three main results are described. There exists a regime with secondary islands but without collisionless effects, and the reconnection rate is faster than Sweet-Parker, but significantly slower than Hall reconnection. This implies that secondary islands do not cause the fastest reconnection rates. The onset of Hall reconnection ejects secondary islands from the vicinity of the X line, implying that energy is released more rapidly during Hall reconnection. Coronal applications are discussed.

  7. Title list publicly available documents: Three Mile Island Unit...

    Office of Scientific and Technical Information (OSTI)

    Subject: 21 SPECIFIC NUCLEAR REACTORS AND ASSOCIATED PLANTS THREE MILE ISLAND-2 REACTOR; BIBLIOGRAPHIES; REACTOR LICENSING; DC - 78 - Light Water Reactor Technology Word Cloud More ...

  8. Cumberland Hill, Rhode Island: Energy Resources | Open Energy...

    OpenEI (Open Energy Information) [EERE & EIA]

    Hill, Rhode Island: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 41.9745431, -71.4670043 Show Map Loading map... "minzoom":false,"mappingser...

  9. MHK Projects/Greenwave Rhode Island Ocean Wave Energy Project...

    OpenEI (Open Energy Information) [EERE & EIA]

    Greenwave Rhode Island Ocean Wave Energy Project < MHK Projects Jump to: navigation, search << Return to the MHK database homepage Loading map... "minzoom":false,"mappingservice":...

  10. Commonwealth of Northern Mariana Islands Initial Technical Assessment

    SciTech Connect

    Baring-Gould, I.; Hunsberger, R.; Visser, C.; Voss, P.

    2011-07-01

    This document is an initial energy assessment for the Commonwealth of the Northern Mariana Islands (CNMI), the first of many steps in developing a comprehensive energy strategy.

  11. Island County, Washington: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Island County, Washington: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 48.19765, -122.579457 Show Map Loading map... "minzoom":false,"mappi...

  12. Project Reports for Aleutian Pribilof Islands Association - 2005...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    The Aleutian Pribilof Islands Association (APIA) will conduct an economic and technical feasibility study for six communities on wind-powerdiesel-plant development. Learn more ...

  13. Rhode Island's 2nd congressional district: Energy Resources ...

    OpenEI (Open Energy Information) [EERE & EIA]

    Registered Energy Companies in Rhode Island's 2nd congressional district Cookson Electronics Jefferson Renewable Energy Tomorrow BioFuels LLC Retrieved from "http:...

  14. Providence, Rhode Island: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    district.12 Registered Energy Companies in Providence, Rhode Island Cookson Electronics References US Census Bureau Incorporated place and minor civil division...

  15. Providence County, Rhode Island: Energy Resources | Open Energy...

    OpenEI (Open Energy Information) [EERE & EIA]

    Companies in Providence County, Rhode Island American Battery Charging Inc Cookson Electronics Evans Capacitor Company Tomorrow BioFuels LLC Energy Generation Facilities in...

  16. Thermal island destabilization and the Greenwald limit (Journal...

    Office of Scientific and Technical Information (OSTI)

    Details In-Document Search This content will become publicly available on February 24, 2016 Title: Thermal island destabilization and the Greenwald limit Authors: White, R....

  17. Aeromagnetic study of the Island of Hawaii | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Aeromagnetic study of the Island of Hawaii Abstract NA Authors T.G. Hildenbrand, J. G. Rosenbaum and V. P. Kanalikaua Published Journal Journal of Geophysical Research,...

  18. Rock Island County, Illinois: Energy Resources | Open Energy...

    OpenEI (Open Energy Information) [EERE & EIA]

    Illinois Hillsdale, Illinois Milan, Illinois Moline, Illinois Oak Grove, Illinois Port Byron, Illinois Rapids City, Illinois Reynolds, Illinois Rock Island Arsenal, Illinois...

  19. ,"Rhode Island Natural Gas Consumption by End Use"

    Energy Information Administration (EIA) (indexed site)

    Consumption by End Use" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description"," Of Series","Frequency","Latest Data for" ,"Data 1","Rhode Island ...

  20. U.S. Virgin Islands Establishes Interconnection Standards to...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Establishes Interconnection Standards to Clear the Way for Grid Interconnection U.S. Virgin Islands Establishes Interconnection Standards to Clear the Way for Grid Interconnection ...

  1. Project Reports for Aleutian Pribilof Islands Association- 2005 Project

    Office of Energy Efficiency and Renewable Energy (EERE)

    The Aleutian Pribilof Islands Association (APIA) will conduct an economic and technical feasibility study for six communities on wind-power/diesel-plant development.

  2. An Audio-Magnetotelluric Investigation In Terceira Island (Azores...

    OpenEI (Open Energy Information) [EERE & EIA]

    Audio-Magnetotelluric Investigation In Terceira Island (Azores) Jump to: navigation, search OpenEI Reference LibraryAdd to library Journal Article: An Audio-Magnetotelluric...

  3. Rhode Island/Wind Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    >> Rhode Island Wind Resources WindTurbine-icon.png Small Wind Guidebook * Introduction * First, How Can I Make My Home More Energy Efficient? * Is Wind Energy Practical...

  4. Energy Transition Initiative: Island Energy Snapshot - Dominican Republic

    SciTech Connect

    2015-09-01

    This profile provides a snapshot of the energy landscape of the Dominican Republic, a Caribbean nation that shares the island of Hispaniola with Haiti to the west.

  5. MHK Projects/Cat Island Project | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Cat Island Project < MHK Projects Jump to: navigation, search << Return to the MHK database homepage Loading map... "minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP"...

  6. Newby Island II Biomass Facility | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Facility Facility Newby Island II Sector Biomass Facility Type Landfill Gas Location Santa Clara County, California Coordinates 37.2938907, -121.7195459 Show Map Loading...

  7. Chebeague Island, Maine: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Incorporated place and minor civil division population dataset (All States, all geography) Retrieved from "http:en.openei.orgwindex.php?titleChebeagueIsland,Maine&oldi...

  8. Bay Harbor Islands, Florida: Energy Resources | Open Energy Informatio...

    OpenEI (Open Energy Information) [EERE & EIA]

    Bay Harbor Islands is a town in Miami-Dade County, Florida. It falls under Florida's 20th congressional district.12 References US Census Bureau Incorporated place and...

  9. MHK Projects/Turkey Island | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Turkey Island < MHK Projects Jump to: navigation, search << Return to the MHK database homepage Loading map... "minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoo...

  10. MHK Projects/Pike Island | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Monitoring and Mitigation Efforts See Tethys << Return to the MHK database homepage Retrieved from "http:en.openei.orgwindex.php?titleMHKProjectsPikeIsland&oldid676758...

  11. Long Island HTS Power Cable | Department of Energy

    Office of Environmental Management (EM)

    Long Island HTS Power Cable This project involves the demonstration of a hightemperature ... HTS Cable Projects High-Temperature Superconductivity Cable Demonstration Projects ...

  12. MHK Projects/Stradbroke Island | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    1 Project Details Isolated from the mainland, South Stradbroke Island on the Queensland Gold Coast, Australia, is dependent upon diesel generation for electricity supply. A trial...

  13. East Providence, Rhode Island: Energy Resources | Open Energy...

    OpenEI (Open Energy Information) [EERE & EIA]

    district.12 Registered Energy Companies in East Providence, Rhode Island Evans Capacitor Company References US Census Bureau Incorporated place and minor civil...

  14. "New Hampshire"," X"," X" "Rhode Island"," X"," X"

    Energy Information Administration (EIA) (indexed site)

    (PADD 1A)" "Connecticut"," X"," X" "Maine"," X"," X" "Massachusetts"," X"," X" "New Hampshire"," X"," X" "Rhode Island"," X"," X" "Vermont"," X"," X" "Central Atlantic (PADD ...

  15. Dominica Island-NREL Cooperation | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Island-NREL Cooperation AgencyCompany Organization National Renewable Energy Laboratory Sector Energy Focus Area Wind Topics Background analysis Website http:...

  16. High Quantum Efficiency AlGaN/InGaN Photodetectors

    SciTech Connect

    Buckley, James H; Leopold, Daniel

    2009-11-24

    High efficiency photon counting detectors in use today for high energy particle detection applications have a significant spectral mismatch with typical sources and have a number of practical problems compared with conventional bialkali photomultiplier tubes. Numerous high energy physics experiments that employ scintillation light detectors or Cherenkov detectors would benefit greatly from photomultipliers with higher quantum efficiencies. The need for extending the sensitivity of photon detectors to the blue and UV wavebands comes from the fact that both Cherenkov light and some scintillators have an emission spectrum which is peaked at short wavelengths. This research involves the development of high quantum efficiency, high gain, UV/blue photon counting detectors based on AlGaN/InGaN photocathode heterostructures grown by molecular beam epitaxy (MBE). The work could eventually lead to nearly ideal light detectors with a number of distinct advantages over existing technologies for numerous applications in high-energy physics and particle astrophysics. Potential advantages include much lower noise detection, better stability and radiation resistance than other cathode structures, very low radioactive background levels for deep underground experiments and high detection efficiency of individual UV-visible photons. We are also working on the development of photocathodes with intrinsic gain, initially improving the detection efficiency of hybrid semiconductor-vacuum tube devices, and eventually leading to an all-solid-state photomultiplier device.

  17. Enhanced optical property in quaternary GaInAsSb/AlGaAsSb quantum wells

    SciTech Connect

    Lin, Chien-Hung Lee, Chien-Ping

    2014-10-21

    High quality GaInAsSb/AlGaAsSb quantum wells (QWs) have been grown by molecular beam epitaxy using proper interface treatments. By controlling the group-V elements at interfaces, we obtained excellent optical quality QWs, which were free from undesired localized trap states, which may otherwise severely affect the exciton recombination. Strong and highly efficient exciton emissions up to room temperature with a wavelength of 2.2 μm were observed. A comprehensive investigation on the QW quality was carried out using temperature dependent and power dependent photoluminescence (PL) measurements. The PL emission intensity remains nearly constant at low temperatures and is free from the PL quenching from the defect induced localized states. The temperature dependent emission energy had a bulk-like behavior, indicating high quality well/barrier interfaces. Because of the uniformity of the QWs and smooth interfaces, the low temperature limit of inhomogeneous line width broadening is as small as 5 meV.

  18. The possibly important role played by Ga{sub 2}O{sub 3} during the activation of GaN photocathode

    SciTech Connect

    Fu, Xiaoqian E-mail: 214808748@qq.com; Wang, Honggang; Zhang, Junju; Li, Zhiming; Cui, Shiyao; Zhang, Lejuan

    2015-08-14

    Three different chemical solutions are used to remove the possible contamination on GaN surface, while Ga{sub 2}O{sub 3} is still found at the surface. After thermal annealing at 710 °C in the ultrahigh vacuum (UHV) chamber and activated with Cs/O, all the GaN samples are successfully activated to the effective negative electron affinity (NEA) photocathodes. Among all samples, the GaN sample with the highest content of Ga{sub 2}O{sub 3} after chemical cleaning obtains the highest quantum efficiency. By analyzing the property of Ga{sub 2}O{sub 3}, the surface processing results, and electron affinity variations during Cs and Cs/O{sub 2} deposition on GaN of other groups, it is suggested that before the adsorption of Cs, Ga{sub 2}O{sub 3} is not completely removed from GaN surface in our samples, which will combine with Cs and lead to a large decrease in electron affinity. Furthermore, the effective NEA is formed for GaN photocathode, along with the surface downward band bending. Based on this assumption, a new dipole model Ga{sub 2}O{sub 3}-Cs is suggested, and the experimental effects are explained and discussed.

  19. Strain relaxation in GaN/Al{sub x}Ga{sub 1-x}N superlattices grown by plasma-assisted molecular-beam epitaxy

    SciTech Connect

    Kotsar, Y.; Bellet-Amalric, E.; Das, A.; Monroy, E.; Sarigiannidou, E.

    2011-08-01

    We have investigated the misfit relaxation process in GaN/Al{sub x}Ga{sub 1-x}N (x = 0.1, 0.3, 0.44) superlattices (SL) deposited by plasma-assisted molecular beam epitaxy. The SLs under consideration were designed to achieve intersubband absorption in the mid-infrared spectral range. We have considered the case of growth on GaN (tensile stress) and on AlGaN (compressive stress) buffer layers, both deposited on GaN-on-sapphire templates. Using GaN buffer layers, the SL remains almost pseudomorphic for x = 0.1, 0.3, with edge-type threading dislocation densities below 9 x 10{sup 8} cm{sup -2} to 2 x 10{sup 9} cm{sup -2}. Increasing the Al mole fraction to 0.44, we observe an enhancement of misfit relaxation resulting in dislocation densities above 10{sup 10} cm{sup -2}. In the case of growth on AlGaN, strain relaxation is systematically stronger, with the corresponding increase in the dislocation density. In addition to the average relaxation trend of the SL, in situ measurements indicate a periodic fluctuation of the in-plane lattice parameter, which is explained by the different elastic response of the GaN and AlGaN surfaces to the Ga excess at the growth front. The results are compared with GaN/AlN SLs designed for near-infrared intersubband absorption.

  20. Enhanced sheet carrier densities in polarization controlled AlInN/AlN/GaN/InGaN field-effect transistor on Si (111)

    SciTech Connect

    Hennig, J. Dadgar, A.; Witte, H.; Bläsing, J.; Lesnik, A.; Strittmatter, A.; Krost, A.

    2015-07-15

    We report on GaN based field-effect transistor (FET) structures exhibiting sheet carrier densities of n = 2.9 10{sup 13} cm{sup −2} for high-power transistor applications. By grading the indium-content of InGaN layers grown prior to a conventional GaN/AlN/AlInN FET structure control of the channel width at the GaN/AlN interface is obtained. The composition of the InGaN layer was graded from nominally x{sub In} = 30 % to pure GaN just below the AlN/AlInN interface. Simulations reveal the impact of the additional InGaN layer on the potential well width which controls the sheet carrier density within the channel region of the devices. Benchmarking the In{sub x}Ga{sub 1−x}N/GaN/AlN/Al{sub 0.87}In{sub 0.13}N based FETs against GaN/AlN/AlInN FET reference structures we found increased maximum current densities of I{sub SD} = 1300 mA/mm (560 mA/mm). In addition, the InGaN layer helps to achieve broader transconductance profiles as well as reduced leakage currents.

  1. Alloy inhomogeneity and carrier localization in AlGaN sections and AlGaN/AlN nanodisks in nanowires with 240350?nm emission

    SciTech Connect

    Himwas, C.; Hertog, M. den; Dang, Le Si; Songmuang, R.; Monroy, E.

    2014-12-15

    We present structural and optical studies of AlGaN sections and AlGaN/AlN nanodisks (NDs) in nanowires grown by plasma-assisted molecular beam epitaxy. The Al-Ga intermixing at Al(Ga)N/GaN interfaces and the chemical inhomogeneity in AlGaN NDs evidenced by scanning transmission electron microscopy are attributed to the strain relaxation process. This interpretation is supported by the three-dimensional strain distribution calculated by minimizing the elastic energy in the structure. The alloy inhomogeneity increases with the Al content, leading to enhanced carrier localization signatures in the luminescence characteristics, i.e., red shift of the emission, s-shaped temperature dependence, and linewidth broadening. Despite these effects, the emission energy of AlGaN/AlN NDs can be tuned in the 240350?nm range with internal quantum efficiencies around 30%.

  2. ARM - News from the Gan Island Deployment

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    News from the Gan Island Deployment Related Links amie.png 34h AMIE Home cindy.png 50h CINDY2011 dynamo.png 34h DYNAMO ARM Data Discovery Browse Data Outreach News & Press Blog Backgrounder (PDF, 1.2MB) Education Flyer (PDF, 2.0MB) Images ARM flickr site Official AMIE Logo AMIE Gear Experiment Planning Steering Committee AMIE-MANUS Proposal Abstract AMIE-GAN Proposal Abstract Meetings Cloud Life Cycle Working Group Deployment Operations Science Plan - TWP Manus Site (PDF, 2.1 MB) Science

  3. Rhode Island Renewable Electric Power Industry Statistics

    Energy Information Administration (EIA) (indexed site)

    Rhode Island Primary Renewable Energy Capacity Source Municipal Solid Waste/Landfill Gas Primary Renewable Energy Generation Source Municipal Solid Waste/Landfill Gas Capacity (megawatts) Value Percent of State Total Total Net Summer Electricity Capacity 1,782 100.0 Total Net Summer Renewable Capacity 28 1.6 Geothermal - - Hydro Conventional 3 0.2 Solar - - Wind 2 0.1 Wood/Wood Waste - - MSW/Landfill Gas 24 1.3 Other Biomass - - Generation (thousand megawatthours) Total Electricity Net

  4. Rhode Island Renewable Electric Power Industry Statistics

    Energy Information Administration (EIA) (indexed site)

    Rhode Island" "Primary Renewable Energy Capacity Source","Municipal Solid Waste/Landfill Gas" "Primary Renewable Energy Generation Source","Municipal Solid Waste/Landfill Gas" "Capacity (megawatts)","Value","Percent of State Total" "Total Net Summer Electricity Capacity",1782,100 "Total Net Summer Renewable Capacity",28,1.6 " Geothermal","-","-" " Hydro

  5. Energy Transition Initiative: Islands Playbook (Book)

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    PLAYBOOK Cover photos (top left, clockwise) from Better Place, NREL 22255; iStock 19648813; iStock 48764420; www.flickr.com/photos/our-planet/5371963671/in/photolist. ii ISLANDS PLAYBOOK Acronyms and Abbreviations v Introduction vii Phase 0: Committing to an Energy Transition 0-1 0.1 Compile a List of Energy Opportunities 0-1 0.2 Identify Decision Makers and Resources 0-1 0.3 Convene Decision Makers for Initial Discussion 0-2 0.4 Record Commitment in a Written Document 0-2 0.5 Phase 0 Resources

  6. ARM - AMIE Gan Island - Data Plots

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Gan Related Links amie.png 34h AMIE Home cindy.png 50h CINDY2011 dynamo.png 34h DYNAMO ARM Data Discovery Browse Data Outreach News & Press Blog Backgrounder (PDF, 1.2MB) Education Flyer (PDF, 2.0MB) Images ARM flickr site Official AMIE Logo AMIE Gear Experiment Planning Steering Committee AMIE-MANUS Proposal Abstract AMIE-GAN Proposal Abstract Meetings Cloud Life Cycle Working Group Deployment Operations Science Plan - TWP Manus Site (PDF, 2.1 MB) Science Plan - Gan Island Site (PDF, 2.0

  7. Aleutian Pribilof Islands Association - Wind Energy Development

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    6 By Connie Fredenberg Aleutian Pribilof Islands Association 201 East 3 rd Avenue Anchorage, AK 99501 " " The Birthplace of the Wind The Birthplace of the Wind " " PROJECT STATUS Phase Met Tower Status Data Collection Feasibility Study Status Funding Status Construction Planned Sand Point TDX Power Installed 5/04 Complete 20 mph Complete AEA $1.47 million Additional ? Summer 07 St. George City of St. George Installed 8/04 Complete 21.5 mph Complete ? ? King Cove City of King

  8. Vertical zone melt growth of GaAs

    SciTech Connect

    Henry, R.L.; Nordquist, P.E.R.; Gorman, R.J.

    1993-12-31

    A Vertical Zone Melt (VZM) technique has been applied to the single crystal growth of GaAs. A pyrolytic boron nitride crucible and a (100) oriented seed were used along with liquid encapsulation by boric oxide. In the case of GaAs, the ampoule was pressurized with either argon or argensic vapor from elemental arsenic at pressures ranging from 1 to 2 atmospheres. A molten zone length of 22 mm gave a growth interface which is nearly flat and resulted in routine single crystal growth. Temperature gradients of 4{degrees}C/cm. and 9{degrees}C/cm. have produced dislocation densities of <1000/cm{sup 2} and 2000-5000/cm{sup 2} respectively for 34 mm diameter crystals of GaAs. Post growth cooling rates for GaAs have been 35, 160 and 500{degrees}C/hr. The cooling rate has been found to affect the number and size of arsenic precipitates and the EL2 concentration in the GaAs crystal. The effects of these and other growth parameters on the crystalline perfection and electrical properties of the crystals will be discussed.

  9. U.S. Virgin Islands- Renewable Energy Feed-in-Tariff

    Energy.gov [DOE]

    There is a 10 MW limit for aggregate production via feed-in-tariff contracts on the islands of St. Thomas, St. John, Water Island, and other offshore keys and islands and a similar 5 MW limit for...

  10. Working Groups Collaborate on U.S. Virgin Islands Clean Energy...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Working Groups Collaborate on U.S. Virgin Islands Clean Energy Vision and Road Map The Energy Development in Islands Nations (EDIN)-U.S. Virgin Islands (USVI) pilot project offers ...

  11. Long Island New York City Offshore Wind Farm | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Long Island New York City Offshore Wind Farm Jump to: navigation, search Name Long Island New York City Offshore Wind Farm Facility Long Island New York City Offshore Wind Farm...

  12. Ge doped GaN with controllable high carrier concentration for...

    Office of Scientific and Technical Information (OSTI)

    Ge doped GaN with controllable high carrier concentration for plasmonic applications Citation Details In-Document Search Title: Ge doped GaN with controllable high carrier...

  13. Dislocation confinement in the growth of Na flux GaN on metalorganic...

    Office of Scientific and Technical Information (OSTI)

    Dislocation confinement in the growth of Na flux GaN on metalorganic chemical vapor deposition-GaN Citation Details In-Document Search Title: Dislocation confinement in the growth ...

  14. Site-controlled fabrication of Ga nanodroplets by focused ion beam

    SciTech Connect

    Xu, Xingliang; Wang, Zhiming M.; Wu, Jiang; Li, Handong; Zhou, Zhihua; Wang, Xiaodong

    2014-03-31

    Ga droplets are created by focused ion beam irradiation of GaAs surface. We report that ordered Ga droplets can be formed on the GaAs surface without any implantation damage. The droplets are characterized with bigger sizes than those droplets formed on damaged area. These aligned Ga droplets are formed via the migration of Ga atoms from ion irradiation area to the edge of undamaged GaAs surface and further nucleation into droplets. The morphological evolution and size distribution of these nanodroplets are investigated systematically with different beam irradiation time and incident angles. Based on this method, well positioned Ga nanodroplets, such as chains, are achieved by using focus ion beam patterning. The controllable assembly of droplets on undamaged semiconductor surface can be used to fabricate templates, to fabricate quantum structures and quantum devices by droplet epitaxy technique.

  15. Bismuth-induced phase control of GaAs nanowires grown by molecular...

    Office of Scientific and Technical Information (OSTI)

    Bismuth-induced phase control of GaAs nanowires grown by molecular beam epitaxy Citation Details In-Document Search Title: Bismuth-induced phase control of GaAs nanowires grown by ...

  16. High-Efficiency GaAs Thin-Film Solar Cell Reliability | Department...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    GaAs Thin-Film Solar Cell Reliability High-Efficiency GaAs Thin-Film Solar Cell Reliability Presented at the PV Module Reliability Workshop, February 26 - 27 2013, Golden, Colorado ...

  17. Surface Chemistry of GaP(001) and InP(001) in Contact with Water...

    Office of Scientific and Technical Information (OSTI)

    Surface Chemistry of GaP(001) and InP(001) in Contact with Water Citation Details In-Document Search Title: Surface Chemistry of GaP(001) and InP(001) in Contact with Water ...

  18. Reactive codoping of GaAlInP compound semiconductors (Patent...

    Office of Scientific and Technical Information (OSTI)

    This site is a product of DOE's Office of Scientific and Technical Information (OSTI) and ... A GaAlInP compound semiconductor and a method of producing a GaAlInP compound ...

  19. Correlation of DLTS and Performance of GaInNAs Cells

    SciTech Connect

    Kurtz, S.; Johnston, S.; Friedman, D.; Ptak, A.; Geisz, J.; McMahon, W.; Olson, J.; Kibbler, A.; Crandall, R.; Ahrenkiel, R.; Kramer, C.; Young, M.

    2005-01-01

    A four-junction GaInP/GaAs/GaInAsN/Ge solar cell should be able to reach 40% efficiency if each of the junctions can be made with a quality similar to that demonstrated for GaAs. However, the GaInAsN subcell has shown poor performance. Deep-level transient spectroscopy (DLTS) can elucidate recombination centers in a material and could help identify the problem with the GaInAsN. So far, DLTS studies of GaInAsN have shown many peaks. In this paper we compare the performance of the GaInAsN solar cells with the DLTS spectra to identify which DLTS peak is correlated with the device performance.

  20. Structure and magnetic properties of Ce₃(Ni/Al/Ga)₁₁-A...

    Office of Scientific and Technical Information (OSTI)

    ...AlGa)-A new phase with the LaAl structure type Prev Next Title: Structure and magnetic properties of Ce(NiAlGa)-A new phase with the ...

  1. Contrasting Behavior of GaP(001) and InP(001) at the Interface...

    Office of Scientific and Technical Information (OSTI)

    Contrasting Behavior of GaP(001) and InP(001) at the Interface with Water Citation Details In-Document Search Title: Contrasting Behavior of GaP(001) and InP(001) at the Interface ...

  2. Electron-limiting defect complex in hyperdoped GaAs: The D D...

    Office of Scientific and Technical Information (OSTI)

    Electron-limiting defect complex in hyperdoped GaAs: The D D X center Prev Next Title: Electron-limiting defect complex in hyperdoped GaAs: The D D X center Authors: Ma, Jie ...

  3. Coexistence of charge-density wave and ferromagnetism in Ni2MnGa...

    Office of Scientific and Technical Information (OSTI)

    Coexistence of charge-density wave and ferromagnetism in Ni2MnGa Citation Details In-Document Search Title: Coexistence of charge-density wave and ferromagnetism in Ni2MnGa ...

  4. Wind resource assessment: San Nicolas Island, California

    SciTech Connect

    McKenna, E.; Olsen, T.L.

    1996-01-01

    San Nicolas Island (SNI) is the site of the Navy Range Instrumentation Test Site which relies on an isolated diesel-powered grid for its energy needs. The island is located in the Pacific Ocean 85 miles southwest of Los Angeles, California and 65 miles south of the Naval Air Weapons Station (NAWS), Point Mugu, California. SNI is situated on the continental shelf at latitude N33{degree}14` and longitude W119{degree}27`. It is approximately 9 miles long and 3.6 miles wide and encompasses an area of 13,370 acres of land owned by the Navy in fee title. Winds on San Nicolas are prevailingly northwest and are strong most of the year. The average wind speed is 7.2 m/s (14 knots) and seasonal variation is small. The windiest months, March through July, have wind speeds averaging 8.2 m/s (16 knots). The least windy months, August through February, have wind speeds averaging 6.2 m/s (12 knots).

  5. Novel photoaffinity ligands for the GA-receptor

    SciTech Connect

    Suttle, J.C.; Hultstrand, J.F.; Tanaka, F.S. )

    1990-05-01

    Previous studies from this laboratory have shown that certain N-substituted phthalimides (NSPs) exhibit GA-like activity in a range of specific bioassays and that bioactive NSPs compete with ({sup 3}H)-GA{sub 4} for soluble binding sites in cucumber homogenates. As such, these compounds may prove useful in the purification and characterization of GA receptor proteins. To this end, five azido-NSPs have been synthesized and are currently being screened for biological activity and photochemical stability. Three azido-NSPs elicit {alpha}-amylase production in barley half-seeds and stimulate tissue elongation in d{sub 5} maize, lettuce, sunflower, and soybean. Further evaluations are in progress and these data as well as the utility of these compounds as photo-affinity ligands will be discussed.

  6. Quaternary InGaAsSb Thermophotovoltaic Diode Technology

    SciTech Connect

    M Dashiell; J Beausang; H Ehsani; G Nichols; D DePoy; L Danielson; P Talamo; K Rahner; E Brown; S Burger; P Fourspring; W Topper; P Baldasaro; C Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; Jizhong Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryl

    2005-01-26

    Thermophotovoltaic (TPV) diodes fabricated from InGaAsSb alloys lattice-matched to GaSb substrates are grown by Metal Organic Vapor Phase Epitaxy (MOVPE). 0.53eV InGaAsSb TPV diodes utilizing front-surface spectral control filters have been tested in a vacuum cavity and a TPV thermal-to-electric conversion efficiency ({eta}{sub TPV}) and a power density (PD) of {eta}{sub TPV} = 19% and PD=0.58 W/cm{sup 2} were measured for T{sub radiator} = 950 C and T{sub diode} = 27 C. Recombination coefficients deduced from minority carrier measurements and the theory reviewed in this article predict a practical limit to the maximum achievable conversion efficiency and power density for 0.53eV InGaAsSb TPV. The limits for the above operating temperatures are projected to be {eta}{sub TPV} = 26% and PD = 0.75 W/cm{sup 2}. These limits are extended to {eta}{sub TPV} = 30% and PD = 0.85W/cm{sup 2} if the diode active region is bounded by a reflective back surface to enable photon recycling and a two-pass optical path length. The internal quantum efficiency of the InGaAsSb TPV diode is close to the theoretically predicted limits, with the exception of short wavelength absorption in GaSb contact layers. Experiments show that the open circuit voltage of the 0.53eV InGaAsSb TPV diodes is not strongly dependent on the device architectures studied in this work where both N/P and P/N double heterostructure diodes have been grown with various acceptor and donor doping levels, having GaSb and AlGaAsSb confinement, and also partial back surface reflectors. Lattice matched InGaAsSb TPV diodes were fabricated with bandgaps ranging from 0.6 to 0.5eV without significant degradation of the open circuit voltage factor, quantum efficiency, or fill factor as the composition approached the miscibility gap. The key diode performance parameter which is limiting efficiency and power density below the theoretical limits in InGaAsSb TPV devices is the open circuit voltage. The open circuit voltages of

  7. Amchitka Island Environmental Analysis at Idaho National Laboratory

    SciTech Connect

    Gracy Elias; W. F. Bauer; J.G. Eisenmenger; C.C. Jensen; B.K. Schuetz; T. C. Sorensen; B.M. White; A. L. Freeman; M. E. McIlwain

    2005-08-01

    The Idaho National Laboratory (INL) provided support to Consortium for Risk Evaluation with Stakeholder Participation (CRESP) in their activities which is supported by the Department of Energy (DOE) to assess the impact of past nuclear testing at Amchitka Island on the ecosystemof the island and surrounding ocean. INL participated in this project in three phases, Phase 1, Phase 2 and Phase 3.

  8. Oahu Wind Integration and Transmission Study (OWITS): Hawaiian Islands

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Transmission Interconnection Project | Department of Energy Oahu Wind Integration and Transmission Study (OWITS): Hawaiian Islands Transmission Interconnection Project Oahu Wind Integration and Transmission Study (OWITS): Hawaiian Islands Transmission Interconnection Project This report provides an independent review included an initial evaluation of the technical configuration and capital costs of establishing an undersea cable system and examining impacts to the existing electric

  9. Reduction of Islands in Full-pressure Stellarator Equilibria

    SciTech Connect

    S.R. Hudson; D.A. Monticello; A.H. Reiman

    2001-04-30

    The control of magnetic islands is a crucial issue in designing Stellarators. Islands are associated with resonant radial magnetic fields at rational rotational-transform surfaces and can lead to chaos and poor plasma confinement. In this article, we show that variations in the resonant fields of a full-pressure stellarator equilibrium can be related to variations in the boundary via a coupling matrix, and inversion of this matrix determines a boundary modification for which the island content is significantly reduced. The numerical procedure is described and the results of island optimization are presented. Equilibria with islands are computed using the Princeton Iterative Equilibrium Solver, and resonant radial fields are calculated via construction of quadratic-flux-minimizing surfaces. A design candidate for the National Compact Stellarator Experiment [Phys. Plasmas 8, 2001], which has a large island, is used to illustrate the technique. Small variations in the boundary shape are used to reduce island size and to reverse the phase of a major island chain.

  10. EIS-0476: Vogtle Electric Generating Plant in Burke County, GA | Department

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    of Energy 6: Vogtle Electric Generating Plant in Burke County, GA EIS-0476: Vogtle Electric Generating Plant in Burke County, GA February 8, 2012 EIS-0476: Final Environmental Impact Statement Department of Energy Loan Guarantees for Proposed Units 3 and 4 at the Vogtle Electric Generating Plant, Burke County, GA February 25, 2014 EIS-0476: Record of Decision Department of Energy Loan Guarantees for Proposed Units 3 and 4 at the Vogtle Electric Generating Plant, Burke County, GA

  11. Rhode Island Regions | U.S. DOE Office of Science (SC)

    Office of Science (SC)

    for your school's state, county, city, or district. For more information, please visit the High School Coach page. Rhode Island Region High School Regional Rhode Island Northeast...

  12. Rhode Island Regions | U.S. DOE Office of Science (SC)

    Office of Science (SC)

    state, county, city, or district. For more information, please visit the Middle School Coach page. Rhode Island Region Middle School Regional Rhode Island Massachusetts Regional...

  13. Dislocation related droop in InGaN/GaN light emitting diodes investigated via cathodoluminescence

    SciTech Connect

    Pozina, Galia; Ciechonski, Rafal; Bi, Zhaoxia; Samuelson, Lars; Monemar, Bo

    2015-12-21

    Today's energy saving solutions for general illumination rely on efficient white light emitting diodes (LEDs). However, the output efficiency droop experienced in InGaN based LEDs with increasing current injection is a serious limitation factor for future development of bright white LEDs. We show using cathodoluminescence (CL) spatial mapping at different electron beam currents that threading dislocations are active as nonradiative recombination centers only at high injection conditions. At low current, the dislocations are inactive in carrier recombination due to local potentials, but these potentials are screened by carriers at higher injection levels. In CL images, this corresponds to the increase of the dark contrast around dislocations with the injection (excitation) density and can be linked with droop related to the threading dislocations. Our data indicate that reduction of droop in the future efficient white LED can be achieved via a drastic reduction of the dislocation density by using, for example, bulk native substrates.

  14. Radiation resistance of GaAs-GaAlAs vertical cavity surface emitting lasers

    SciTech Connect

    Jabbour, J.; Zazoui, M.; Sun, G.C.; Bourgoin, J.C.; Gilard, O.

    2005-02-15

    The variations of the optical and electrical characteristics of a vertical cavity surface emitting laser based on GaAs quantum wells have been monitored versus irradiation with 1 MeV electrons. The results are understood by the introduction of nonradiative recombination centers in the wells whose characteristics, capture cross section for minority carriers times their introduction rate, can be determined. A similar study performed for proton irradiation shows that the results can be explained in the same way when the introduction rate of the defects is replaced by the proton energy loss into atomic collisions. These results allow us to deduce the equivalence between electron and proton irradiations: A flux of 1 proton cm{sup -2} which loses an energy E{sub nl} (eV) into atomic collisions is equivalent to a fluence of about 9x10{sup -2} E{sub nl} cm{sup -2}, 1 MeV electrons.

  15. Highly transparent ammonothermal bulk GaN substrates

    SciTech Connect

    Jiang, WK; Ehrentraut, D; Downey, BC; Kamber, DS; Pakalapati, RT; Do Yoo, H; D'Evelyn, MP

    2014-10-01

    A novel apparatus has been employed to grow ammonothermal (0001) gallium nitride (GaN) with diameters up to 2 in The crystals have been characterized by x-ray diffraction rocking-curve (XRC) analysis, optical and scanning electron microscopy (SEM), cathodoluminescence (CL), and optical spectroscopy. High crystallinity GaN with FWHM values about 20-50 arcsec and dislocation densities below 1 x 10(5) cm(-2) have been obtained. High optical transmission was achieved with an optical absorption coefficient below 1 cm(-1) at a wavelength of 450 nm. (C) 2014 Elsevier B.V. All rights reserved.

  16. GA Hot Cell D&D Closeout Report

    Office of Legacy Management (LM)

    GENERAL ATOMICS HOT CELL FACILITY DECONTAMINATION & DECOMMISSIONING PROJECT FINAL PROJECT CLOSEOUT REPORT prepared for GA HOT CELL D&D PROJECT CONTRACT NUMBERS DE-AC03-84SF11962 and DE-AC03-95SF20798 PBS VL-GA-0012 Approvals Prepared by: James Davis, III Date Project Manager, Oakland Environmental Programs Office Reviewed by: John Lee Date Deputy, Oakland Environmental Programs Office Approved by: Laurence McEwen Date Acting Director, Oakland Environmental Programs Office General Atomics

  17. Graphene/GaN diodes for ultraviolet and visible photodetectors

    SciTech Connect

    Lin, Fang; Chen, Shao-Wen; Meng, Jie; Tse, Geoffrey; Fu, Xue-Wen; Xu, Fu-Jun [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China); Shen, Bo; Liao, Zhi-Min, E-mail: liaozm@pku.edu.cn, E-mail: yudp@pku.edu.cn; Yu, Da-Peng, E-mail: liaozm@pku.edu.cn, E-mail: yudp@pku.edu.cn [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China)

    2014-08-18

    The Schottky diodes based on graphene/GaN interface are fabricated and demonstrated for the dual-wavelength photodetection of ultraviolet (UV) and green lights. The physical mechanisms of the photoelectric response of the diodes with different light wavelengths are different. For UV illumination, the photo-generated carriers lower the Schottky barrier and increase the photocurrent. For green light illumination, as the photon energy is smaller than the bandgap of GaN, the hot electrons excited in graphene via internal photoemission are responsible for the photoelectric response. Using graphene as a transparent electrode, the diodes show a ?mS photoresponse, providing an alternative route toward multi-wavelength photodetectors.

  18. Simple intrinsic defects in GaAs : numerical supplement.

    SciTech Connect

    Schultz, Peter Andrew

    2012-04-01

    This Report presents numerical tables summarizing properties of intrinsic defects in gallium arsenide, GaAs, as computed by density functional theory. This Report serves as a numerical supplement to the results published in: P.A. Schultz and O.A. von Lilienfeld, 'Simple intrinsic defects in GaAs', Modelling Simul. Mater. Sci Eng., Vol. 17, 084007 (2009), and intended for use as reference tables for a defect physics package in device models. The numerical results for density functional theory calculations of properties of simple intrinsic defects in gallium arsenide are presented.

  19. Electronic contribution to friction on GaAs

    SciTech Connect

    Applied Science and Technology Graduate Group, UC Berkeley; Dept. of Materials Sciences and Engineering, UC Berkeley; Salmeron, Miquel; Qi, Yabing; Park, J.Y.; Hendriksen, B.L.M.; Ogletree, D.F.; Salmeron, Miquel

    2008-04-15

    The electronic contribution to friction at semiconductor surfaces was investigated by using a Pt-coated tip with 50nm radius in an atomic force microscope sliding against an n-type GaAs(100) substrate. The GaAs surface was covered by an approximately 1 nm thick oxide layer. Charge accumulation or depletion was induced by the application of forward or reverse bias voltages. We observed a substantial increase in friction force in accumulation (forward bias) with respect to depletion (reverse bias). We propose a model based on the force exerted by the trapped charges that quantitatively explains the experimental observations of excess friction.

  20. Polycrystalline MBE-grown GaAs for solar cells

    SciTech Connect

    Friedman, D.J.; Kurtz, S.R.; Kibbler, A.E.; Al-Jassim, M.; Jones, K.; Keyes, B.; Matson, R.

    1997-02-01

    This paper will discuss initial studies of thin-film GaAs grown by molecular-beam epitaxy for use in developing a thin-film GaAs solar cell. Photocurrent and photoluminescence intensity are related to the material morphology as a function of growth conditions. Growth temperature and V/III ratio have a dramatic effect on the photocurrent. However, it seems likely that even after optimizing such growth parameters, it will be necessary to provide substrates that can provide templates to enhance grain size from the start of thin-film growth. {copyright} {ital 1997 American Institute of Physics.}

  1. Polycrystalline MBE-grown GaAs for solar cells

    SciTech Connect

    Friedman, D. J.; Kurtz, Sarah R.; Kibbler, A. E.; Al-Jassim, M.; Jones, K.; Keyes, B.; Matson, R.

    1997-02-15

    This paper will discuss initial studies of thin-film GaAs grown by molecular-beam epitaxy for use in developing a thin-film GaAs solar cell. Photocurrent and photoluminescence intensity are related to the material morphology as a function of growth conditions. Growth temperature and V/III ratio have a dramatic effect on the photocurrent. However, it seems likely that even after optimizing such growth parameters, it will be necessary to provide substrates that can provide templates to enhance grain size from the start of thin-film growth.

  2. Influence of Ga content on the structure and anomalous Hall effect of Fe{sub 1−x}Ga{sub x} thin films on GaSb(100)

    SciTech Connect

    Anh Tuan, Duong; Shin, Yooleemi; Viet Cuong, Tran; Cho, Sunglae; Phan, The-Long

    2014-05-07

    The Fe{sub 1−x}Ga{sub x} thin films (x = 0.4, 0.5) have been grown on GaSb(100) substrate using molecular beam epitaxy. An epitaxial film with bcc α-Fe crystal structure (A2) is observed in Fe{sub 0.6}Ga{sub 0.4} film, while an impure Fe{sub 3}Ga phase with DO{sub 3} structure is appeared in Fe{sub 0.5}Ga{sub 0.5} film. The saturated magnetizations at room temperature are observed to be 570 emu/cm{sup 3} and 180 emu/cm{sup 3} and the coercivities to be 170 and 364 Oe for Fe{sub 0.6}Ga{sub 0.4} and Fe{sub 0.5}Ga{sub 0.5}, respectively. A hysteresis trend in Hall resistance vs. magnetic field is observed for Fe{sub 0.5}Ga{sub 0.5} film. However, there is a weak hysteresis noticed in Fe{sub 0.4}Ga{sub 0.6} thin film.

  3. Terahertz intersubband absorption in non-polar m-plane AlGaN/GaN quantum wells

    SciTech Connect

    Edmunds, C.; Malis, O.; Shao, J.; Shirazi-HD, M.; Manfra, M. J.

    2014-07-14

    We demonstrate THz intersubband absorption (15.6–26.1 meV) in m-plane AlGaN/GaN quantum wells. We find a trend of decreasing peak energy with increasing quantum well width, in agreement with theoretical expectations. However, a blue-shift of the transition energy of up to 14 meV was observed relative to the calculated values. This blue-shift is shown to decrease with decreasing charge density and is, therefore, attributed to many-body effects. Furthermore, a ∼40% reduction in the linewidth (from roughly 8 to 5 meV) was obtained by reducing the total sheet density and inserting undoped AlGaN layers that separate the wavefunctions from the ionized impurities in the barriers.

  4. Inversion-mode GaAs wave-shaped field-effect transistor on GaAs (100) substrate

    SciTech Connect

    Zhang, Jingyun; Si, Mengwei; Wu, Heng; Ye, Peide D.; Lou, Xiabing; Gordon, Roy G.; Shao, Jiayi; Manfra, Michael J.

    2015-02-16

    Inversion-mode GaAs wave-shaped metal-oxide-semiconductor field-effect transistors (WaveFETs) are demonstrated using atomic-layer epitaxy of La{sub 2}O{sub 3} as gate dielectric on (111)A nano-facets formed on a GaAs (100) substrate. The wave-shaped nano-facets, which are desirable for the device on-state and off-state performance, are realized by lithographic patterning and anisotropic wet etching with optimized geometry. A well-behaved 1 μm gate length GaAs WaveFET shows a maximum drain current of 64 mA/mm, a subthreshold swing of 135 mV/dec, and an I{sub ON}/I{sub OFF} ratio of greater than 10{sup 7}.

  5. Fabrication and Characterization of a Single Hole Transistor in p-type GaAs/AlGaAs Heterostructures

    SciTech Connect

    Tracy, Lisa A; Reno, John L.; Hargett, Terry W.

    2015-09-01

    Most spin qubit research to date has focused on manipulating single electron spins in quantum dots. However, hole spins are predicted to have some advantages over electron spins, such as reduced coupling to host semiconductor nuclear spins and the ability to control hole spins electrically using the large spin-orbit interaction. Building on recent advances in fabricating high-mobility 2D hole systems in GaAs/AlGaAs heterostructures at Sandia, we fabricate and characterize single hole transistors in GaAs. We demonstrate p-type double quantum dot devices with few-hole occupation, which could be used to study the physics of individual hole spins and control over coupling between hole spins, looking towards eventual applications in quantum computing. Intentionally left blank

  6. Strong enhancement of terahertz emission from GaAs in InAs/GaAs quantum dot structures

    SciTech Connect

    Estacio, Elmer; Pham, Minh Hong; Takatori, Satoru; Cadatal-Raduban, Marilou; Nakazato, Tomoharu; Shimizu, Toshihiko; Sarukura, Nobuhiko; Somintac, Armando; Defensor, Michael; Awitan, Fritz Christian B.; Jaculbia, Rafael B.; Salvador, Arnel; Garcia, Alipio

    2009-06-08

    We report on the intense terahertz emission from InAs/GaAs quantum dot (QD) structures grown by molecular beam epitaxy. Results reveal that the QD sample emission was as high as 70% of that of a p-type InAs wafer, the most intense semiconductor emitter to date. Excitation wavelength studies showed that the emission was due to absorption in strained undoped GaAs, and corresponds to a two order-of-magnitude enhancement. Moreover, it was found that multilayer QDs emit more strongly compared with a single layer QD sample. At present, we ascribe the intense radiation to huge strain fields at the InAs/GaAs interface.

  7. Characteristics of InGaP/InGaAs pseudomorphic high electron mobility transistors with triple delta-doped sheets

    SciTech Connect

    Chu, Kuei-Yi; Chiang, Meng-Hsueh Cheng, Shiou-Ying; Liu, Wen-Chau

    2012-02-15

    Fundamental and insightful characteristics of InGaP/InGaAs double channel pseudomorphic high electron mobility transistors (DCPHEMTs) with graded and uniform triple {delta}-doped sheets are coomprehensively studied and demonstrated. To gain physical insight, band diagrams, carrier densities, and direct current characteristics of devices are compared and investigated based on the 2D semiconductor simulator, Atlas. Due to uniform carrier distribution and high electron density in the double InGaAs channel, the DCPHEMT with graded triple {delta}-doped sheets exhibits better transport properties, higher and linear transconductance, and better drain current capability as compared with the uniformly triple {delta}-doped counterpart. The DCPHEMT with graded triple {delta}-doped structure is fabricated and tested, and the experimental data are found to be in good agreement with simulated results.

  8. High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration

    SciTech Connect

    Young, N. G. Farrell, R. M.; Iza, M.; Speck, J. S.; Perl, E. E.; Keller, S.; Bowers, J. E.; Nakamura, S.; DenBaars, S. P.

    2014-04-21

    We demonstrate InGaN/GaN multiple quantum well solar cells grown by metalorganic chemical vapor deposition on a bulk (0001) substrate with high-performance broadband optical coatings to improve light absorption. A front-side anti-reflective coating and a back-side dichroic mirror were designed to minimize front surface reflections across a broad spectral range and maximize rear surface reflections only in the spectral range absorbed by the InGaN, making the cells suitable for multijunction solar cell integration. Application of optical coatings increased the peak external quantum efficiency by 56% (relative) and conversion efficiency by 37.5% (relative) under 1 sun AM0 equivalent illumination.

  9. Degradation of InGaN/GaN laser diodes investigated by micro-cathodoluminescence and micro-photoluminescence

    SciTech Connect

    Meneghini, M. Carraro, S.; Meneghesso, G.; Trivellin, N.; Zanoni, E.; Rossi, F.; Salviati, G.; Schade, L.; Karunakaran, M. A.; Schwarz, U. T.

    2013-12-02

    We present an investigation of the degradation of InGaN/GaN laser diodes grown on a GaN substrate. The results indicate that: (i) Ageing induces a significant increase in the threshold current (Ith) of the lasers, which is attributed to an increase in non-radiative recombination; (ii) Ith increase is correlated to a decrease in the micro-cathodoluminescence signal measured (after the removal of the top metallization) in the region under the ridge; (iii) micro-photoluminescence measurements indicate that constant current stress increases non-radiative recombination within the quantum wells (and not only within the barriers), and induces an increase in the emission wavelength of the degraded region.

  10. Energy Development in Island Nations (EDIN), Partnering to Increase Island Energy Security Around the World (Fact Sheet)

    SciTech Connect

    Not Available

    2010-06-01

    This fact sheet provides an overview of the international partnership for Energy Development in Island nations, including mission, goals, and organization. It also includes background on EDIN's three pilot projects: U.S. Virgin Islands, Iceland-Dominica Collaboration, and New Zealand-Geothermal Potential in the Pacific.

  11. Emission spectra of a laser based on an In(Ga)As/GaAs quantum-dot superlattice

    SciTech Connect

    Sobolev, M. M. Buyalo, M. S.; Nevedomskiy, V. N.; Zadiranov, Yu. M.; Zolotareva, R. V.; Vasil’ev, A. P.; Ustinov, V. M.; Portnoi, E. L.

    2015-10-15

    The spectral characteristics of a laser with an active region based on a ten-layer system of In(Ga)As/GaAs vertically correlated quantum dots with 4.5-nm GaAs spacer layers between InAs quantum dots are studied under the conditions of spontaneous and stimulated emission, depending on the current and the duration of pump pulses. Data obtained by transmission electron microscopy and electroluminescence and absorption polarization anisotropy measurements make it possible to demonstrate that the investigated system of tunnel-coupled InAs quantum dots separated by thin GaAs barriers represents a quantum-dot superlattice. With an increase in the laser pump current, the electroluminescence intensity increases linearly and the spectral position of the electroluminescence maximum shifts to higher energies, which is caused by the dependence of the miniband density-of-states distribution on the pump current. Upon exceeding the threshold current, multimode lasing via the miniband ground state is observed. One of the lasing modes can be attributed to the zero-phonon line, and the other is determined by the longitudinal-optical phonon replica of quantum-dot emission. The results obtained give evidence that, under conditions of the laser pumping of an In(Ga)As/GaAs quantum-dot superlattice, strong coupling between the discrete electron states in the miniband and optical phonons takes place. This leads to the formation of quantum-dot polarons, resulting from the resonant mixing of electronic states whose energy separation is comparable to the optical-phonon energy.

  12. Current transient spectroscopy for trapping analysis on Au-free AlGaN/GaN Schottky barrier diode

    SciTech Connect

    Hu, J. Groeseneken, G.; Stoffels, S.; Lenci, S.; Venegas, R.; Decoutere, S.; Bakeroot, B.

    2015-02-23

    This paper presents a combined technique of high voltage off-state stress and current transient measurements to investigate the trapping/de-trapping characteristics of Au-free AlGaN/GaN Schottky barrier diodes. The device features a symmetric three-terminal structure with a central anode contact surrounded by two separate cathodes. Under the diode off-state stress conditions, the two separate cathodes were electrically shorted. The de-trapping dynamics was studied by monitoring the recovery of the two-dimensional electron gas (2DEG) current at different temperatures by applying 0.5?V at cathode 2 while grounding cathode 1. During the recovery, the anode contact acts as a sensor of changes in diode leakage current. This leakage variation was found to be mainly due to the barrier height variation. With this method, the energy level and capture cross section of different traps in the AlGaN/GaN Schottky barrier diode can be extracted. Furthermore, the physical location of different trapping phenomena is indicated by studying the variation of the diode leakage current during the recovery. We have identified two distinct trapping mechanisms: (i) electron trapping at the AlGaN surface in the vicinity of the Schottky contact which results in the leakage reduction (barrier height ?{sub B} increase) together with R{sub ON} degradation; (ii) the electron trapping in the GaN channel layer which partially depletes the 2DEG. The physical origin of the two different traps is discussed in the text.

  13. Dynamic control of the optical emission from GaN/InGaN nanowire quantum dots by surface acoustic waves

    SciTech Connect

    Lazić, S. Chernysheva, E.; Meulen, H. P. van der; Calleja Pardo, J. M.; Gačević, Ž.; Calleja, E.

    2015-09-15

    The optical emission of InGaN quantum dots embedded in GaN nanowires is dynamically controlled by a surface acoustic wave (SAW). The emission energy of both the exciton and biexciton lines is modulated over a 1.5 meV range at ∼330 MHz. A small but systematic difference in the exciton and biexciton spectral modulation reveals a linear change of the biexciton binding energy with the SAW amplitude. The present results are relevant for the dynamic control of individual single photon emitters based on nitride semiconductors.

  14. Phonon bottleneck in GaAs/Al{sub x}Ga{sub 1−x}As quantum dots

    SciTech Connect

    Chang, Y. C.; Robson, A. J.; Harrison, S.; Zhuang, Q. D.; Hayne, M.

    2015-06-15

    We report low-temperature photoluminescence measurements on highly-uniform GaAs/Al{sub x}Ga{sub 1−x}As quantum dots grown by droplet epitaxy. Recombination between confined electrons and holes bound to carbon acceptors in the dots allow us to determine the energies of the confined states in the system, as confirmed by effective mass calculations. The presence of acceptor-bound holes in the quantum dots gives rise to a striking observation of the phonon-bottleneck effect.

  15. Excitonic transitions in highly efficient (GaIn)As/Ga(AsSb) type-II quantum-well structures

    SciTech Connect

    Gies, S.; Kruska, C.; Berger, C.; Hens, P.; Fuchs, C.; Rosemann, N. W.; Veletas, J.; Stolz, W.; Koch, S. W.; Heimbrodt, W.; Ruiz Perez, A.; Hader, J.; Moloney, J. V.

    2015-11-02

    The excitonic transitions of the type-II (GaIn)As/Ga(AsSb) gain medium of a “W”-laser structure are characterized experimentally by modulation spectroscopy and analyzed using microscopic quantum theory. On the basis of the very good agreement between the measured and calculated photoreflectivity, the type-I or type-II character of the observable excitonic transitions is identified. Whereas the energetically lowest three transitions exhibit type-II character, the subsequent energetically higher transitions possess type-I character with much stronger dipole moments. Despite the type-II character, the quantum-well structure exhibits a bright luminescence.

  16. Distributed Wind Case Study: Cross Island Farms, Wellesley Island, New York (Fact Sheet)

    SciTech Connect

    Not Available

    2012-04-01

    Installing a small wind turbine can sometimes be difficult due to economics, zoning issues, public perception, and other barriers. Persistence and innovation, however, can result in a successful installation. Dani Baker and David Belding own Cross Island Farms, a 102-acre certified organic farm on Wellesley Island in northern New York. In 2009, they took their interest in renewable energy to the next level by researching the logistics of a small wind installation on their land to make their farm even more sustainable. Their renewable energy system consists of one 10-kilowatt Bergey Excel wind turbine, a solar array, and a propane-powered generator. This case study describes funding for the project and the installation process.

  17. Distributed Wind Case Study: Cross Island Farms, Wellesley Island, New York

    SciTech Connect

    2012-04-30

    Installing a small wind turbine can sometimes be challenging due to economics, zoning issues, public perception, and other barriers. Persistence and innovation, however, can result in a successful installation. Dani Baker and David Belding own Cross Island Farms, a 102-acre certified organic farm on Wellesley Island in northern New York. In 2009, they took their interest in renewable energy to the next level by researching the logistics of a small wind installation on their land to make their farm even more sustainable. Their renewable energy system consists of one 10-kilowatt Bergey Excel wind turbine, a solar array, and a propane-powered generator. This case study describes funding for the project and the installation process.

  18. Ultrasensitive detection of Hg{sup 2+} using oligonucleotide-functionalized AlGaN/GaN high electron mobility transistor

    SciTech Connect

    Cheng, Junjie; Li, Jiadong; Miao, Bin; Wu, Dongmin; Wang, Jine; Pei, Renjun; Wu, Zhengyan

    2014-08-25

    An oligonucleotide-functionalized ion sensitive AlGaN/GaN high electron mobility transistor (HEMT) was fabricated to detect trace amounts of Hg{sup 2+}. The advantages of ion sensitive AlGaN/GaN HEMT and highly specific binding interaction between Hg{sup 2+} and thymines were combined. The current response of this Hg{sup 2+} ultrasensitive transistor was characterized. The current increased due to the accumulation of Hg{sup 2+} ions on the surface by the highly specific thymine-Hg{sup 2+}-thymine recognition. The dynamic linear range for Hg{sup 2+} detection has been determined in the concentrations from 10{sup −14} to 10{sup −8} M and a detection limit below 10{sup −14} M level was estimated, which is the best result of AlGaN/GaN HEMT biosensors for Hg{sup 2+} detection till now.

  19. Influence of stress on optical transitions in GaN nanorods containing a single InGaN/GaN quantum disk

    SciTech Connect

    Zhuang, Y. D.; Shields, P. A.; Allsopp, D. W. E.; Bruckbauer, J.; Edwards, P. R.; Martin, R. W.

    2014-11-07

    Cathodoluminescence (CL) hyperspectral imaging has been performed on GaN nanorods containing a single InGaN quantum disk (SQD) with controlled variations in excitation conditions. Two different nanorod diameters (200 and 280 nm) have been considered. Systematic changes in the CL spectra from the SQD were observed as the accelerating voltage of the electron beam and its position of incidence are varied. It is shown that the dominant optical transition in the SQD varies across the nanorod as a result of interplay between the contributions of the deformation potential and the quantum-confined Stark effect to the transition energy as consequence of radial variation in the pseudomorphic strain.

  20. The Marshall Islands Data Management Program

    SciTech Connect

    Stoker, A.C.; Conrado, C.L.

    1995-09-01

    This report is a resource document of the methods and procedures used currently in the Data Management Program of the Marshall Islands Dose Assessment and Radioecology Project. Since 1973, over 60,000 environmental samples have been collected. Our program includes relational database design, programming and maintenance; sample and information management; sample tracking; quality control; and data entry, evaluation and reduction. The usefulness of scientific databases involves careful planning in order to fulfill the requirements of any large research program. Compilation of scientific results requires consolidation of information from several databases, and incorporation of new information as it is generated. The success in combining and organizing all radionuclide analysis, sample information and statistical results into a readily accessible form, is critical to our project.

  1. Subsidence at the Weeks Island SPR Facility

    SciTech Connect

    Bauer, S.J.

    1999-01-01

    The elevation change data measured at the Weeks Island SPR site over the last 16+ years has been studied and analyzed. The subsidence rate is not constant with time and while the subsidence rate may have increased slightly during the past several years, recently the rate has increased more dramatically. The most recent increase comes at a time when the Strategic Petroleum Reserve (SPR) storage mine had been emptied of oil and was in the process of being refilled with brine. Damage to surface structures that has been observed during the past 12-18 months is attributed to the continued subsidence and dtierential subsidence across structures. The recent greater subsidence rates were unanticipated according to analysis results and will be used to aid further subsidence model development.

  2. OTEC for the islands-A perspective

    SciTech Connect

    Craven, J.P.

    1980-12-01

    The potential for OTEC as an energy source for island communities is examined in the context of Pacific communities. It is demonstrated that OTEC development there is interrelated with the OTEC development for the US mainland. It is also demonstrated that this development will be required to meet the demand for hydrogen-rich fuels both for fuel cells and as a raw material for synthetic fuels. It is then shown that the development of OTEC for the Caribbean is an intermediate step, falling between Pacific and mainland requirements. A four-stage strategy is then outlined which should result in a timely and cost-effective development of this important world energy resource.

  3. InGaAs/GaAsP strain balanced multi-quantum wires grown on misoriented GaAs substrates for high efficiency solar cells

    SciTech Connect

    Alonso-Álvarez, D.; Thomas, T.; Führer, M.; Hylton, N. P.; Ekins-Daukes, N. J.; Lackner, D.; Philipps, S. P.; Bett, A. W.; Sodabanlu, H.; Fujii, H.; Watanabe, K.; Sugiyama, M.; Nasi, L.; Campanini, M.

    2014-08-25

    Quantum wires (QWRs) form naturally when growing strain balanced InGaAs/GaAsP multi-quantum wells (MQW) on GaAs [100] 6° misoriented substrates under the usual growth conditions. The presence of wires instead of wells could have several unexpected consequences for the performance of the MQW solar cells, both positive and negative, that need to be assessed to achieve high conversion efficiencies. In this letter, we study QWR properties from the point of view of their performance as solar cells by means of transmission electron microscopy, time resolved photoluminescence and external quantum efficiency (EQE) using polarised light. We find that these QWRs have longer lifetimes than nominally identical QWs grown on exact [100] GaAs substrates, of up to 1 μs, at any level of illumination. We attribute this effect to an asymmetric carrier escape from the nanostructures leading to a strong 1D-photo-charging, keeping electrons confined along the wire and holes in the barriers. In principle, these extended lifetimes could be exploited to enhance carrier collection and reduce dark current losses. Light absorption by these QWRs is 1.6 times weaker than QWs, as revealed by EQE measurements, which emphasises the need for more layers of nanostructures or the use light trapping techniques. Contrary to what we expected, QWR show very low absorption anisotropy, only 3.5%, which was the main drawback a priori of this nanostructure. We attribute this to a reduced lateral confinement inside the wires. These results encourage further study and optimization of QWRs for high efficiency solar cells.

  4. Individual Radiation Protection Monitoring in the Marshall Islands: Enewetak Island Resettlement Support (May-December 2001)

    SciTech Connect

    Hamilton, T; Hickman, D; Conrado, C; Brown, T; Brunk, J; Marchetti, A; Cox, C; Martinelli, R; Kehl, S; Johannes, K; Henry, D; Bell, R T; Petersen, G

    2002-06-01

    The US Department of Energy (DOE) has recently implemented a series of strategic initiatives to address long-term radiological surveillance needs at former US test sites in the Marshall Islands. The plan is to engage local atoll communities in developing shared responsibilities for implementing radiation protection programs for resettled and resettling populations. Using pooled resources of the US Department of Energy and local atoll governments, individual radiation protection programs have been developed in whole-body counting and plutonium urinalysis to assess potential intakes of radionuclides from residual fallout contamination. The whole-body counting systems are operated and maintained by Marshallese technicians. Samples of urine are collected from resettlement workers and island residents under controlled conditions and analyzed for plutonium isotopes at the Lawrence Livermore National Laboratory using advanced accelerator based measurement technologies. This web site provides an overview of the methodologies, a full disclosure of the measurement data, and a yearly assessment of estimated radiation doses to resettlement workers and island residents.

  5. An inverted AlGaAs/GaAs patterned-Ge tunnel junction cascade concentrator solar cell. Final subcontract report, 1 January 1991--31 August 1992

    SciTech Connect

    Venkatasubramanian, R.

    1993-01-01

    This report describes work to develop inverted-grown Al{sub 0.34}Ga{sub 0.66}As/GaAs cascades. Several significant developments are reported on as follows: (1) The AM1.5 1-sun total-area efficiency of the top Al{sub 0.34}Ga{sub 0.66}As cell for the cascade was improved from 11.3% to 13.2% (NREL measurement [total-area]). (2) The ``cycled`` organometallic vapor phase epitaxy growth (OMVPE) was studied in detail utilizing a combination of characterization techniques including Hall-data, photoluminescence, and secondary ion mass spectroscopy. (3) A technique called eutectic-metal-bonding (EMB) was developed by strain-free mounting of thin GaAs-AlGaAs films (based on lattice-matched growth on Ge substrates and selective plasma etching of Ge substrates) onto Si carrier substrates. Minority-carrier lifetime in an EMB GaAs double-heterostructure was measured as high as 103 nsec, the highest lifetime report for a freestanding GaAs thin film. (4) A thin-film, inverted-grown GaAs cell with a 1-sun AM1.5 active-area efficiency of 20.3% was obtained. This cell was eutectic-metal-bonded onto Si. (5) A thin-film inverted-grown, Al{sub 0.34}Ga{sub 0.66}As/GaAs cascade with AM1.5 efficiency of 19.9% and 21% at 1-sun and 7-suns, respectively, was obtained. This represents an important milestone in the development of an AlGaAs/GaAs cascade by OMVPE utilizing a tunnel interconnect and demonstrates a proof-of-concept for the inverted-growth approach.

  6. Selective saturation of paramagnetic defects in electron- and neutron-irradiated GaAs

    SciTech Connect

    Goltzene, A.; Meyer, B.; Schwab, C.; Beall, R.B.; Newman, R.C.; Whitehouse, J.E.; Woodhead, J.

    1985-06-15

    A comparison of the electron paramagnetic resonance spectra obtained in fast neutron- and electron-irradiated GaAs crystals has confirmed the simultaneous presence of the quadruplet and singlet spectra, ascribed previously to As/sup 4 +//sub Ga/ and V/sup 2 -//sub Ga/ centers. Only in electron-irradiated material, however, are both signals separated by the selective microwave power saturation of the quadruplet. This apparent disparity is ascribed to a difference in the coupling between the two partners in the As/sup 4 +//sub Ga/-V/sup 2 -//sub Ga/ associated complexes.

  7. Ultra High p-doping Material Research for GaN Based Light Emitters

    SciTech Connect

    Vladimir Dmitriev

    2007-06-30

    The main goal of the Project is to investigate doping mechanisms in p-type GaN and AlGaN and controllably fabricate ultra high doped p-GaN materials and epitaxial structures. Highly doped p-type GaN-based materials with low electrical resistivity and abrupt doping profiles are of great importance for efficient light emitters for solid state lighting (SSL) applications. Cost-effective hydride vapor phase epitaxial (HVPE) technology was proposed to investigate and develop p-GaN materials for SSL. High p-type doping is required to improve (i) carrier injection efficiency in light emitting p-n junctions that will result in increasing of light emitting efficiency, (ii) current spreading in light emitting structures that will improve external quantum efficiency, and (iii) parameters of Ohmic contacts to reduce operating voltage and tolerate higher forward currents needed for the high output power operation of light emitters. Highly doped p-type GaN layers and AlGaN/GaN heterostructures with low electrical resistivity will lead to novel device and contact metallization designs for high-power high efficiency GaN-based light emitters. Overall, highly doped p-GaN is a key element to develop light emitting devices for the DOE SSL program. The project was focused on material research for highly doped p-type GaN materials and device structures for applications in high performance light emitters for general illumination P-GaN and p-AlGaN layers and multi-layer structures were grown by HVPE and investigated in terms of surface morphology and structure, doping concentrations and profiles, optical, electrical, and structural properties. Tasks of the project were successfully accomplished. Highly doped GaN materials with p-type conductivity were fabricated. As-grown GaN layers had concentration N{sub a}-N{sub d} as high as 3 x 10{sup 19} cm{sup -3}. Mechanisms of doping were investigated and results of material studies were reported at several International conferences providing

  8. Conductivity based on selective etch for GaN devices and applications thereof

    SciTech Connect

    Zhang, Yu; Sun, Qian; Han, Jung

    2015-12-08

    This invention relates to methods of generating NP gallium nitride (GaN) across large areas (>1 cm.sup.2) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.

  9. Graded band gap GaInNAs solar cells

    SciTech Connect

    Langer, F.; Perl, S.; Kamp, M.; Höfling, S.

    2015-06-08

    Dilute nitride GaInN(Sb)As with a band gap (E{sub g}) of 1.0 eV is a promising material for the integration in next generation multijunction solar cells. We have investigated the effect of a compositionally graded GaInNAs absorber layer on the spectral response of a GaInNAs sub cell. We produced band gap gradings (ΔE{sub g}) of up to 39 meV across a 1 μm thick GaInNAs layer. Thereby, the external quantum efficiency—compared to reference cells—was increased due to the improved extraction of photo-generated carriers from 34.0% to 36.7% for the wavelength range from 900 nm to 1150 nm. However, this device figure improvement is accompanied by a small decrease in the open circuit voltage of about 20 mV and the shift of the absorption edge to shorter wavelengths.

  10. Properties of H, O and C in GaN

    SciTech Connect

    Pearton, S.J.; Abernathy, C.R.; Lee, J.W.

    1996-04-01

    The electrical properties of the light ion impurities H, O and C in GaN have been examined in both as-grown and implanted material. H is found to efficiently passivate acceptors such as Mg, Ca and C. Reactivation occurs at {ge} 450 C and is enhanced by minority carrier injection. The hydrogen does not leave the GaN crystal until > 800 C, and its diffusivity is relatively high ({approximately} 10{sup {minus}11} cm{sup 2}/s) even at low temperatures (< 200 C) during injection by wet etching, boiling in water or plasma exposure. Oxygen shows a low donor activation efficiency when implanted into GaN, with an ionization level of 30--40 meV. It is essentially immobile up to 1,100 C. Carbon can produce low p-type levels (3 {times} 10{sup 17} cm{sup {minus}3}) in GaN during MOMBE, although there is some evidence it may also create n-type conduction in other nitrides.

  11. Defect-Reduction Mechanism for Improving Radiative Efficiency in InGaN/GaN Light-Emitting Diodes using InGaN Underlayers

    DOE PAGES [OSTI]

    Armstrong, Andrew M.; Bryant, Benjamin N.; Crawford, Mary H.; Koleske, Daniel D.; Lee, Stephen R.; Wierer, Jr., Jonathan J.

    2015-04-01

    The influence of a dilute InxGa1-xN (x~0.03) underlayer (UL) grown below a single In0.16Ga0.84N quantum well (SQW), within a light-emitting diode(LED), on the radiative efficiency and deep level defect properties was studied using differential carrier lifetime (DCL) measurements and deep level optical spectroscopy (DLOS). DCL measurements found that inclusion of the UL significantly improved LED radiative efficiency. At low current densities, the non-radiative recombination rate of the LED with an UL was found to be 3.9 times lower than theLED without an UL, while the radiative recombination rates were nearly identical. This, then, suggests that the improved radiative efficiency resultedmore » from reduced non-radiative defect concentration within the SQW. DLOS measurement found the same type of defects in the InGaN SQWs with and without ULs. However, lighted capacitance-voltage measurements of the LEDs revealed a 3.4 times reduction in a SQW-related near-mid-gap defect state for the LED with an UL. Furthermore, quantitative agreement in the reduction of both the non-radiative recombination rate (3.9×) and deep level density (3.4×) upon insertion of an UL corroborates deep level defect reduction as the mechanism for improved LED efficiency.« less

  12. Effect of the deposition of cobalt on the optoelectronic properties of quantum-confined In(Ga)As/GaAs heteronanostructures

    SciTech Connect

    Volkova, N. S.; Gorshkov, A. P.; Zdoroveyshchev, A. V.; Istomin, L. A.; Levichev, S. B.

    2015-12-15

    The systematic features of the inf luence of defect formation during the deposition of a cobalt contact on the optoelectronic characteristics of structures containing InAs/GaAs quantum dots and In{sub x}Ga{sub 1–x}As/GaAs quantum wells are studied. From analysis of the temperature dependences of the photosensitivity of the InAs/GaAs quantum-dot structures, the values of the resultant recombination lifetime of photoexcited charge carriers in quantum dots at different conditions of Co deposition and at different structural parameters are determined.

  13. Influence of strain induced by AlN nucleation layer on the electrical properties of AlGaN/GaN heterostructures on Si(111) substrate

    SciTech Connect

    Christy, Dennis; Watanabe, Arata; Egawa, Takashi

    2014-10-15

    The crack-free metal-organic chemical vapor deposition (MOCVD) grown AlGaN/GaN heterostructures on Si substrate with modified growth conditions of AlN nucleation layer (NL) and its influence on the electrical and structural properties of conductive GaN layer are presented. From the Hall electrical measurements, a gradual decrease of two-dimensional electron gas (2DEG) concentration near heterointerface as the function of NL thickness is observed possibly due to the reduction in difference of piezoelectric polarization charge densities between AlGaN and GaN layers. It also indicates that the minimum tensile stress and a relatively less total dislocation density for high pressure grown NL can ensure a 20 % increment in mobility at room temperature irrespective of the interface roughness. The thickness and pressure variations in NL and the subsequent changes in growth mode of AlN contributing to the post growth residual tensile stress are investigated using X-ray diffraction and Raman scattering experiments, respectively. The post growth intrinsic residual stress in top layers of heterostructures arises from lattice mismatches, NL parameters and defect densities in GaN. Hence, efforts to reduce the intrinsic residual stress in current conducting GaN layer give an opportunity to further improve the electrical characteristics of AlGaN/GaN device structures on Si.

  14. Absorption enhancement through Fabry-Pérot resonant modes in a 430 nm thick InGaAs/GaAsP multiple quantum wells solar cell

    SciTech Connect

    Behaghel, B.; Tamaki, R.; Watanabe, K.; Sodabanlu, H.; Vandamme, N.; Dupuis, C.; Bardou, N.; Cattoni, A.; Okada, Y.; Sugiyama, M.; Collin, S.; Guillemoles, J.-F.

    2015-02-23

    We study light management in a 430 nm-thick GaAs p-i-n single junction solar cell with 10 pairs of InGaAs/GaAsP multiple quantum wells (MQWs). The epitaxial layer transfer on a gold mirror improves light absorption and increases the external quantum efficiency below GaAs bandgap by a factor of four through the excitation of Fabry-Perot resonances. We show a good agreement with optical simulation and achieve around 10% conversion efficiency. We demonstrate numerically that this promising result can be further improved by anti-reflection layers. This study paves the way to very thin MQWs solar cells.

  15. In-plane tunneling anisotropic magnetoresistance in (Ga,Mn)As/GaAs Esaki diodes in the regime of the excess current

    SciTech Connect

    Shiogai, J.; Ciorga, M. Utz, M.; Schuh, D.; Bougeard, D.; Weiss, D.; Kohda, M.; Nitta, J.; Nojima, T.

    2015-06-29

    We investigate the angular dependence of the tunneling anisotropic magnetoresistance in (Ga,Mn)As/n-GaAs spin Esaki diodes in the regime where the tunneling process is dominated by the excess current through midgap states in (Ga,Mn)As. We compare it to similar measurements performed in the regime of band-to-band tunneling. Whereas the latter show biaxial symmetry typical for magnetic anisotropy observed in (Ga,Mn)As samples, the former is dominated by uniaxial anisotropy along the 〈110〉 axes.

  16. Testing a GaAs cathode in SRF gun

    SciTech Connect

    Wang, E.; Kewisch, J.; Ben-Zvi, I.; Burrill, A.; Rao, T.; Wu, Q.; Holmes, D.

    2011-03-28

    RF electron guns with a strained superlattice GaAs cathode are expected to generate polarized electron beams of higher brightness and lower emittance than do DC guns, due to their higher field gradient at the cathode's surface and lower cathode temperature. We plan to install a bulk GaAs:Cs in a SRF gun to evaluate the performance of both the gun and the cathode in this environment. The status of this project is: In our 1.3 GHz 1/2 cell SRF gun, the vacuum can be maintained at nearly 10{sup -12} Torr because of cryo-pumping at 2K. With conventional activation of bulk GaAs, we obtained a QE of 10% at 532 nm, with lifetime of more than 3 days in the preparation chamber and have shown that it can survive in transport from the preparation chamber to the gun. The beam line has been assembled and we are exploring the best conditions for baking the cathode under vacuum. We report here the progress of our test of the GaAs cathode in the SRF gun. Future particle accelerators, such as eRHIC and the ILC require high-brightness, high-current polarized electrons. Strained superlattice GaAs:Cs has been shown to be an efficient cathode for producing polarized electrons. Activation of GaAs with Cs,O(F) lowers the electron affinity and makes it energetically possible for all the electrons, excited into the conduction band that drift or diffuse to the emission surface, to escape into the vacuum. Presently, all operating polarized electron sources, such as the CEBAF, are DC guns. In these devices, the excellent ultra-high vacuum extends the lifetime of the cathode. However, the low field gradient on the photocathode's emission surface of the DC guns limits the beam quality. The higher accelerating gradients, possible in the RF guns, generate a far better beam. Until recently, most RF guns operated at room temperature, limiting the vacuum to {approx}10{sup -9} Torr. This destroys the GaAs's NEA surface. The SRF guns combine the excellent vacuum conditions of DC guns and the high

  17. Gallium hole traps in irradiated KTiOPO{sub 4}:Ga crystals

    SciTech Connect

    Grachev, V.; Meyer, M.; Malovichko, G.; Hunt, A. W.

    2014-12-07

    Nominally pure and gallium doped single crystals of potassium titanyl phosphate (KTiOPO{sub 4}) have been studied by Electron Paramagnetic Resonance at low temperatures before and after irradiation. Irradiation with 20?MeV electrons performed at room temperature and liquid nitrogen temperature caused an appearance of electrons and holes. Gallium impurities act as hole traps in KTiOPO{sub 4} creating Ga{sup 4+} centers. Two different Ga{sup 4+} centers were observed, Ga1 and Ga2. The Ga1 centers are dominant in Ga-doped samples. For the Ga1 center, a superhyperfine structure with one nucleus with nuclear spin was registered and attributed to the interaction of gallium electrons with a phosphorus nucleus or proton in its surrounding. In both Ga1 and Ga2 centers, Ga{sup 4+} ions substitute for Ti{sup 4+} ions, but with a preference to one of two electrically distinct crystallographic positions (site selective substitution). The Ga doping eliminates one of the shortcomings of KTP crystalsionic conductivity of bulk crystals. However, this does not improve significantly the resistance of the crystals to electron and ?-radiation.

  18. Characterization and device performance of (AgCu)(InGa)Se2 absorber layers

    SciTech Connect

    Hanket, Gregory; Boyle, Jonathan H.; Shafarman, William N.

    2009-06-08

    The study of (AgCu)(InGa)Se2 absorber layers is of interest in that Ag-chalcopyrites exhibit both wider bandgaps and lower melting points than their Cu counterparts. (AgCu)(InGa)Se2 absorber layers were deposited over the composition range 0 < Ag/(Ag+Cu) < 1 and 0.3 < Ga/(In+Ga) < 1.0 using a variety of elemental co-evaporation processes. Films were found to be singlephase over the entire composition range, in contrast to prior studies. Devices with Ga content 0.3 < Ga/(In+Ga) <0.5 tolerated Ag incorporation up to Ag/(Ag+Cu) = 0.5 without appreciable performance loss. Ag-containing films with Ga/(In+Ga) = 0.8 showed improved device characteristics over Cu-only control samples, in particular a 30-40% increase in short-circuit current. An absorber layer with composition Ag/(Ag+Cu) = 0.75 and Ga/(In+Ga) = 0.8 yielded a device with VOC = 890 mV, JSC = 20.5mA/cm2, fill factor = 71.3%, and ? = 13.0%.

  19. MOCVD Growth of AlGaInN for UV Emitters

    SciTech Connect

    Crawford, Mary; Han, Jung

    1999-07-07

    Issues related to the growth of nitride-based UV emitters are investigated in this work. More than 100 times of improved in the optical efficiency of the GaN active region can be attained with a combination of raising the growth pressure and introducing a small amount of indium. The unique issue in the UV emitter concerning the use of AlGaN for confinement and the associated tensile cracking is also investigated. They showed that the quaternary AlGaInN is potentially capable of providing confinement to GaN and GaN:In active regions while maintaining lattice matching to GaN, unlike the AlGaN ternary system.

  20. Optical and quantum efficiency analysis of (Ag,Cu)(In,Ga)Se2 absorber layers

    SciTech Connect

    Boyle, Jonathan; Hanket, Gregory; Shafarman, William

    2009-06-09

    (Ag,Cu)(In,Ga)Se2 thin films have been deposited by elemental co-evaporation over a wide range of compositions and their optical properties characterized by transmission and reflection measurements and by relative shift analysis of quantum efficiency device measurements. The optical bandgaps were determined by performing linear fits of (?h?)2 vs. h?, and the quantum efficiency bandgaps were determined by relative shift analysis of device curves with fixed Ga/(In+Ga) composition, but varying Ag/(Cu+Ag) composition. The determined experimental optical bandgap ranges of the Ga/(In+Ga) = 0.31, 0.52, and 0.82 groups, with Ag/(Cu+Ag) ranging from 0 to 1, were 1.19-1.45 eV, 1.32-1.56 eV, and 1.52-1.76 eV, respectively. The optical bowing parameter of the different Ga/(In+Ga) groups was also determined.

  1. Efficiency calculations of thin-film GaAs solar cells on Si substrates

    SciTech Connect

    Yamaguchi, M.; Amano, C.

    1985-11-01

    Dislocation effect upon the efficiency of single-crystal thin-film AlGaAs-GaAs heteroface solar cells on Si substrates is analyzed. Solar-cell properties are calculated based on a simple model; in the model, dislocations act as recombination centers to reduce the minority-carrier diffusion length in each layer and increase the space-charge layer recombination current. Numerical analysis is also carried out to optimize thin-film AlGaAs-GaAs heteroface solar-cell structures. The fabrication of thin-film AlGaAs-GaAs heteroface solar cells with a practical efficiency larger than 18% on Si substrates appears possible if the dislocation density in the thin-film GaAs layer is less than 10/sup 6/ cm/sup -2/.

  2. Quaternary InGaAsSb Thermophotovoltaic Diodes

    SciTech Connect

    MW Dashiell; JF Beausang; H Ehsani; GJ Nichols; DM Depoy; LR Danielson; P Talamo; KD Rahner; EJ Brown; SR Burger; PM Foruspring; WF Topper; PF Baldasaro; CA Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; J Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryi

    2006-03-09

    In{sub x}Ga{sub 1-x}As{sub y}Sb{sub 1-y} thermophotovoltaic (TPV) diodes were grown lattice-matched to GaSb substrates by Metal Organic Vapor Phase Epitaxy (MOVPE) in the bandgap range of E{sub G} = 0.5 to 0.6eV. InGaAsSb TPV diodes, utilizing front-surface spectral control filters, are measured with thermal-to-electric conversion efficiency and power density of {eta}{sub TPV} = 19.7% and PD =0.58 W/cm{sup 2} respectively for a radiator temperature of T{sub radiator} = 950 C, diode temperature of T{sub diode} = 27 C, and diode bandgap of E{sub G} = 0.53eV. Practical limits to TPV energy conversion efficiency are established using measured recombination coefficients and optical properties of front surface spectral control filters, which for 0.53eV InGaAsSb TPV energy conversion is {eta}{sub TPV} = 28% and PD = 0.85W/cm{sup 2} at the above operating temperatures. The most severe performance limits are imposed by (1) diode open-circuit voltage (VOC) limits due to intrinsic Auger recombination and (2) parasitic photon absorption in the inactive regions of the module. Experimentally, the diode V{sub OC} is 15% below the practical limit imposed by intrinsic Auger recombination processes. Analysis of InGaAsSb diode electrical performance vs. diode architecture indicate that the V{sub OC} and thus efficiency is limited by extrinsic recombination processes such as through bulk defects.

  3. Wind Energy Development in the Aleutian Pribilof Islands

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    5 By Connie Fredenberg Aleutian Pribilof Islands Association 201 East 3 rd Avenue Anchorage, AK 99501 "The Birthplace of the Wind" "The Birthplace of the Wind" 2 Aleutian Pribilof Islands Association, Inc. * Anchorage to Adak - 1,200 air miles for $1,240 * Rich in renewable energy resources: wind, geothermal, hydro, tidal * Home to 2,329 Unangan for over 10,000 years * The richest marine ecosystem left in the world 3 Aleutian Pribilof Islands Association, Inc. * All Fossil

  4. ARM - Field Campaign - Macquarie Island Cloud and Radiation Experiment

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    (MICRE) govCampaignsMacquarie Island Cloud and Radiation Experiment (MICRE) Campaign Links Science Plan Backgrounder Baseline Instruments and Data Plots Related Campaigns Macquarie Island Cloud and Radiation Experiment (MICRE): Ice Nucleating Particle Measurements 2017.03.01, DeMott, OSC Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send Campaign : Macquarie Island Cloud and Radiation Experiment (MICRE) 2016.03.01 - 2018.03.31 Lead Scientist :

  5. High 400?C operation temperature blue spectrum concentration solar junction in GaInN/GaN

    SciTech Connect

    Zhao, Liang; Detchprohm, Theeradetch; Wetzel, Christian

    2014-12-15

    Transparent wide gap junctions suitable as high temperature, high flux topping cells have been achieved in GaInN/GaN by metal-organic vapor phase epitaxy. In structures of 25 quantum wells (QWs) under AM1.5G illumination, an open circuit voltage of 2.1?V is achieved. Of the photons absorbed in the limited spectral range of <450?nm, 64.2% are converted to electrons collected at the contacts under zero bias. At a fill factor of 45%, they account for a power conversion efficiency of38.6%. Under concentration, the maximum output power density per sun increases from 0.49?mW/cm{sup 2} to 0.51?mW/cm{sup 2} at 40?suns and then falls 0.42?mW/cm{sup 2} at 150?suns. Under external heating, a maximum of 0.59?mW/cm{sup 2} is reached at 250?C. Even at 400?C, the device is fully operational and exceeds room temperature performance. A defect analysis suggests that significantly higher fill factors and extension into longer wavelength ranges are possible with further development. The results prove GaInN/GaN QW solar junctions a viable and rugged topping cell for concentrator photovoltaics with minimal cooling requirements. By capturing the short range spectrum, they reduce the thermal load to any conventional cells stacked behind.

  6. Plasmonic terahertz detectors based on a high-electron mobility GaAs/AlGaAs heterostructure

    SciTech Connect

    Bia?ek, M. Witowski, A. M.; Grynberg, M.; ?usakowski, J.; Orlita, M.; Potemski, M.; Czapkiewicz, M.; Umansky, V.

    2014-06-07

    In order to characterize magnetic field (B) tunable THz plasmonic detectors, spectroscopy experiments were carried out at liquid helium temperatures and high magnetic fields on devices fabricated on a high electron mobility GaAs/AlGaAs heterostructure. The samples were either gated (the gate of a meander shape) or ungated. Spectra of a photovoltage generated by THz radiation were obtained as a function of B at a fixed THz excitation from a THz laser or as a function of THz photon frequency at a fixed B with a Fourier spectrometer. In the first type of measurements, the wave vector of magnetoplasmons excited was defined by geometrical features of samples. It was also found that the magnetoplasmon spectrum depended on the gate geometry which gives an additional parameter to control plasma excitations in THz detectors. Fourier spectra showed a strong dependence of the magnetoplasmon resonance amplitude on the conduction-band electron filling factor which was explained within a model of the electron gas heating with THz radiation. The study allows to define both the advantages and limitations of plasmonic devices based on high-mobility GaAs/AlGaAs heterostructures for THz detection at low temperatures and high magnetic fields.

  7. On the redox origin of surface trapping in AlGaN/GaN high electron mobility transistors

    SciTech Connect

    Gao, Feng; Chen, Di; Tuller, Harry L.; Thompson, Carl V.; Palacios, Toms

    2014-03-28

    Water-related redox couples in ambient air are identified as an important source of the surface trapping states, dynamic on-resistance, and drain current collapse in AlGaN/GaN high electron mobility transistors (HEMTs). Through in-situ X-ray photoelectron spectroscopy (XPS), direct signature of the water-related specieshydroxyl groups (OH) was found at the AlGaN surface at room temperature. It was also found that these species, as well as the current collapse, can be thermally removed above 200?C in vacuum conditions. An electron trapping mechanism based on the H{sub 2}O/H{sub 2} and H{sub 2}O/O{sub 2} redox couples is proposed to explain the 0.5?eV energy level commonly attributed to the surface trapping states. Finally, the role of silicon nitride passivation in successfully removing current collapse in these devices is explained by blocking the water molecules away from the AlGaN surface.

  8. Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs

    SciTech Connect

    Greenlee, Jordan D. Anderson, Travis J.; Koehler, Andrew D.; Weaver, Bradley D.; Kub, Francis J.; Hobart, Karl D.; Specht, Petra; Dubon, Oscar D.; Luysberg, Martina; Weatherford, Todd R.

    2015-08-24

    Proton-induced damage in AlGaN/GaN HEMTs was investigated using energy-dispersive X-ray spectroscopy (EDS) and transmission electron microscopy (TEM), and simulated using a Monte Carlo technique. The results were correlated to electrical degradation using Hall measurements. It was determined by EDS that the interface between GaN and AlGaN in the irradiated HEMT was broadened by 2.2 nm, as estimated by the width of the Al EDS signal compared to the as-grown interface. The simulation results show a similar Al broadening effect. The extent of interfacial roughening was examined using high resolution TEM. At a 2 MeV proton fluence of 6 × 10{sup 14} H{sup +}/cm{sup 2}, the electrical effects associated with the Al broadening and surface roughening include a degradation of the ON-resistance and a decrease in the electron mobility and 2DEG sheet carrier density by 28.9% and 12.1%, respectively.

  9. Effect of proton irradiation energy on AlGaN/GaN metal-oxide semiconductor high electron mobility transistors

    DOE PAGES [OSTI]

    Ahn, S.; Dong, C.; Zhu, W.; Kim, B. -j.; Hwang, Ya-Hsi; Ren, F.; Pearton, S. J.; Yang, Gwangseok; Kim, J.; Patrick, Erin; et al

    2015-08-18

    The effects of proton irradiation energy on dc characteristics of AlGaN/GaN metal-oxide semiconductor high electron mobility transistors (MOSHEMTs) using Al2O3 as the gate dielectric were studied. Al2O3/AlGaN/GaN MOSHEMTs were irradiated with a fixed proton dose of 5 × 1015 cm-2 at different energies of 5, 10, or 15 MeV. More degradation of the device dc characteristics was observed for lower irradiation energy due to the larger amount of nonionizing energy loss in the active region of the MOSHEMTs under these conditions. The reductions in saturation current were 95.3%, 68.3%, and 59.8% and reductions in maximum transconductance were 88%, 54.4%, andmore » 40.7% after 5, 10, and 15 MeV proton irradiation, respectively. Both forward and reverse gate leakage current were reduced more than one order of magnitude after irradiation. The carrier removal rates for the irradiation energies employed in this study were in the range of 127–289 cm-1. These are similar to the values reported for conventional metal-gate high-electron mobility transistors under the same conditions and show that the gate dielectric does not affect the response to proton irradiation for these energies.« less

  10. Microstructures of GaN and In{sub x}Ga{sub 1-x}N films grown by MOCVD on free-standing GaN templates

    SciTech Connect

    Jasinski, J.; Liliental-Weber, Z.; Huang, D.; Reshchikov, M.A.; Yun, F.; Morkoc, H.; Sone, C.; Park, S.S.; Lee, K.Y.

    2002-04-30

    We summarize structural properties of thick HVPE GaN templates from the point of view of their application as substrates for growth of nitride layers. This is followed by the results of optical and structural studies, mostly transmission electron microscopy, of nitride layers grown by MOCVD on top of the HVPE substrates. The results indicate high structural quality of these layers with a low density of threading dislocations (in the range of 10{sup 6} cm{sup -2}). Convergent beam electron diffraction studies showed that the MOCVD GaN films have Ga-polarity, the same polarity as the HVPE GaN substrates. Structural studies of an InGaN layer grown on top of the MOCVD GaN film showed the presence of two layers, which differed in lattice parameter and composition. The upper layer, on the top of the structure had a c-lattice parameter about 2% larger than that of GaN and contained 10.3 {+-} 0.8% of In. Values measured for the thinner, intermediate layer adjacent to the GaN layer were about 2 .5 times lower.

  11. GaN Initiative for Grid Applications (GIGA)

    SciTech Connect

    Turner, George

    2015-07-03

    For nearly 4 ½ years, MIT Lincoln Laboratory (MIT/LL) led a very successful, DoE-funded team effort to develop GaN-on-Si materials and devices, targeting high-voltage (>1 kV), high-power, cost-effective electronics for grid applications. This effort, called the GaN Initiative for Grid Applications (GIGA) program, was initially made up of MIT/LL, the MIT campus group of Prof. Tomas Palacios (MIT), and the industrial partner M/A Com Technology Solutions (MTS). Later in the program a 4th team member was added (IQE MA) to provide commercial-scale GaN-on-Si epitaxial materials. A basic premise of the GIGA program was that power electronics, for ubiquitous utilization -even for grid applications - should be closer in cost structure to more conventional Si-based power electronics. For a number of reasons, more established GaN-on-SiC or even SiC-based power electronics are not likely to reach theses cost structures, even in higher manufacturing volumes. An additional premise of the GIGA program was that the technical focus would be on materials and devices suitable for operating at voltages > 1 kV, even though there is also significant commercial interest in developing lower voltage (< 1 kV), cost effective GaN-on-Si devices for higher volume applications, like consumer products. Remarkable technical progress was made during the course of this program. Advances in materials included the growth of high-quality, crack-free epitaxial GaN layers on large-diameter Si substrates with thicknesses up to ~5 μm, overcoming significant challenges in lattice mismatch and thermal expansion differences between Si and GaN in the actual epitaxial growth process. Such thick epilayers are crucial for high voltage operation of lateral geometry devices such as Schottky barrier (SB) diodes and high electron mobility transistors (HEMTs). New “Normally-Off” device architectures were demonstrated – for safe operation of power electronics circuits. The trade-offs between lateral and

  12. Mercer Island, Washington: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    This article is a stub. You can help OpenEI by expanding it. Mercer Island is a city in King County, Washington. It falls under Washington's 8th congressional district.12...

  13. A Presidential Proclamation - Asian American and Pacific Islander...

    Office of Environmental Management (EM)

    ... I call upon all Americans to visit www.WhiteHouse.govAAPI andwww.AsianPacificHeritage.gov to learn more about the history of Asian Americans and Pacific Islanders, and to observe ...

  14. American Samoa's Rebate Program Brings ENERGY STAR to Island

    Office of Energy Efficiency and Renewable Energy (EERE)

    Thanks to a grant through the American Recovery and Reinvestment Act, residents of American Samoa are able for the first time to purchase ENERGY STAR air conditioners – and for 30 percent off - through the Island's first appliance rebate program.

  15. DWEA Webinar: Wind-Diesel and Islanded Grids

    Energy.gov [DOE]

    DWEA is launching a monthly webinar program to discuss new developments in the industry. During the first webinar, experts will provide information on wind systems in the emerging market of island...

  16. U.S. Virgin Islands Infographic | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    ...em> U.S. Virgin Islands Clears the Way for Unprecedented Levels of Solar Energy USVI Energy Road Map: Charting the Course to a Clean Energy Future (Brochure), EDIN (Energy ...

  17. Eigenmodes of quasi-static magnetic islands in current sheet

    SciTech Connect

    Li Yi; Cai Xiaohui; Chai Lihui; Wang Shui; Zheng Huinan; Shen Chao

    2011-12-15

    As observation have shown, magnetic islands often appear before and/or after the onset of magnetic reconnections in the current sheets, and they also appear in the current sheets in the solar corona, Earth's magnetotail, and Earth's magnetopause. Thus, the existence of magnetic islands can affect the initial conditions in magnetic reconnection. In this paper, we propose a model of quasi-static magnetic island eigenmodes in the current sheet. This model analytically describes the magnetic field structures in the quasi-static case, which will provide a possible approach to reconstructing the magnetic structures in the current sheet via observation data. This model is self-consistent in the kinetic theory. Also, the distribution function of charged particles in the magnetic island can be calculated.

  18. Rhode Island Schools Teach Energy Essentials | Department of...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    December 10, 2015 - 11:24am Addthis Students participating in the NEED Project at Scituate ... Photo Courtesy | Rhode Island Public Schools Students participating in the NEED Project at ...

  19. A Miocene Island-Arc Volcanic Seamount- The Takashibiyama Formation...

    OpenEI (Open Energy Information) [EERE & EIA]

    Island-Arc Volcanic Seamount- The Takashibiyama Formation, Shimane Peninsula, Sw Japan Jump to: navigation, search OpenEI Reference LibraryAdd to library Journal Article: A Miocene...

  20. Renewable Energy and Inter-Island Power Transmission (Presentation)

    SciTech Connect

    Gevorgian, V.

    2011-05-01

    This presentation summarizes recent findings pertaining to inter-island connection of renewable and other energy sources, in particular, as these findings relate cable options, routing, specifications, and pros and cons.