National Library of Energy BETA

Sample records for graphi te hoback

  1. Te

    Energy Information Administration (EIA) (indexed site)

    Í l e d u E l l e s m e r e N e w f o u n d l a n d a n d L a b r a d o r Te r r e - N e u v e - e t - L a b r a d o r 22 A l a s k a N u n a v u t O n t a r i o A l b e r t a Te x a s N o r t h w e s t Te r r i t o r i e s M a n i t o b a B r i t i s h C o l u m b i a S a s k a t c h e w a n Y u k o n M o n t a n a U t a h I d a h o C a l i f o r n i a N e v a d a O r e g o n A r i z o n a I o w a K a n s a s C o l o r a d o W y o m i n g S o n o r a N e w M e x i c o M i n n e s o t a N e b r

  2. Te

    Energy Information Administration (EIA) (indexed site)

    N u n a v u t O n t a r i o A l b e r t a Te x a s N o r t h w e s t Te r r i t o r i e s M a n i t o b a B r i t i s h C o l u m b i a S a s k a t c h e w a n Y u k o n M o n t a n a U t a h I d a h o C a l i f o r n i a N e v a d a O r e g o n A r i z o n a I o w a K a n s a s C o l o r a d o W y o m i n g S o n o r a N e w M e x i c o M i n n e s o t a N e b r a s k a O h i o C h i h u a h u a I l l i n o i s M i s s o u r i F l o r i d a G e o r g i a O k l a h o m a W a s h i n g t o n S o

  3. Te

    Energy Information Administration (EIA) (indexed site)

    A l a s k a N u n a v u t O n t a r i o A l b e r t a Te x a s N o r t h w e s t Te r r i t o r i e s M a n i t o b a B r i t i s h C o l u m b i a S a s k a t c h e w a n Y u k o n M o n t a n a U t a h I d a h o C a l i f o r n i a N e v a d a O r e g o n A r i z o n a I o w a K a n s a s C o l o r a d o W y o m i n g S o n o r a N e w M e x i c o M i n n e s o t a N e b r a s k a O h i o C h i h u a h u a I l l i n o i s M i s s o u r i F l o r i d a G e o r g i a O k l a h o m a W a s h i n

  4. Te

    Energy Information Administration (EIA) (indexed site)

    D u N o r d - O u e s t Te r r e - N e u v e - e t - L a b r a d o r Q u é b e c Í l e - d u - P r i n c e - É d o u a r d N o u v e l l e - É c o s s e N o u v e a u - B r u n s w i c k C o l o m b i e - B r i t a n n i q u e B a f f i n I s l a n d Í l e d u B a f f i n E l l e s m e r e I s l a n d Í l e d u E l l e s m e r e V i c t o r i a I s l a n d Í l e d u V i c t o r i a N e w f o u n d l a n d a n d L a b r a d o r Te r r e - N e u v e - e t - L a b r a d o r A l a s k a N u n

  5. 125Te NMR chemical-shift trends in PbTeGeTe and PbTeSnTe alloys

    SciTech Connect

    Njegic, Bosiljka; Levin, Evgenii M.; Schmidt-Rohr, Klaus

    2013-10-08

    Complex tellurides, such as doped PbTe, GeTe, and their alloys, are among the best thermoelectric materials. Knowledge of the change in 125Te NMR chemical shift due to bonding to dopant or solute atoms is useful for determination of phase composition, peak assignment, and analysis of local bonding. We have measured the 125Te NMR chemical shifts in PbTe-based alloys, Pb1?xGexTe and Pb1?xSnxTe, which have a rocksalt-like structure, and analyzed their trends. For low x, several peaks are resolved in the 22-kHz MAS 125Te NMR spectra. A simple linear trend in chemical shifts with the number of Pb neighbors is observed. No evidence of a proposed ferroelectric displacement of Ge atoms in a cubic PbTe matrix is detected at low Ge concentrations. The observed chemical shift trends are compared with the results of DFT calculations, which confirm the linear dependence on the composition of the first-neighbor shell. The data enable determination of the composition of various phases in multiphase telluride materials. They also provide estimates of the 125Te chemical shifts of GeTe and SnTe (+970 and +400150 ppm, respectively, from PbTe), which are otherwise difficult to access due to Knight shifts of many hundreds of ppm in neat GeTe and SnTe.

  6. Neutron capture of /sup 122/Te, /sup 123/Te, /sup 124/Te, /sup 125/Te, and /sup 126/Te

    SciTech Connect

    Macklin, R.L.; Winters, R.R.

    1989-07-01

    Isotopically enriched samples of the tellurium isotopes from mass 122 to mass 126 were used to measure neutron capture in the energy range 2.6 keV to 600 keV at the Oak Ridge Electron Linear Accelerator pulsed neutron source. Starting at 2.6 keV, over 200 Breit-Wigner resonances for each isotope were used to describe the capture data. Least-squares adjustment gave parameters and their uncertainties for a total of 1659 resonances. Capture cross sections averaged over Maxwellian neutron distributions with temperatures ranging from kT = 5 keV to kT = 100 keV were derived for comparison with stellar nucleosynthesis calculations. For the three isotopes shielded from the astrophysical r-process, /sup 122/Te, /sup 123/Te and /sup 124/Te at kT = 30 keV the respective values were (280 /plus minus/ 10) mb, (819 /plus minus/ 30) mb and (154 /plus minus/ 6) mb. The corresponding products of cross section and solar system abundance are nearly equal in close agreement with s-process nucleosynthesis calculations. 26 refs., 8 figs., 10 tabs.

  7. TE Connectivity Finds Answers in Tomography

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    TE Connectivity Finds Answers in Tomography TE Connectivity Finds Answers in Tomography Print Thursday, 22 August 2013 10:50 TE Connectivity is a world leader in connectivity-the...

  8. Optical phonons in PbTe/CdTe multilayer heterostructures

    SciTech Connect

    Novikova, N. N.; Yakovlev, V. A.; Kucherenko, I. V.; Karczewski, G.; Aleshchenko, Yu. A.; Muratov, A. V.; Zavaritskaya, T. N.; Melnik, N. N.

    2015-05-15

    The infrared reflection spectra of PbTe/CdTe multilayer nanostructures grown by molecular-beam epitaxy are measured in the frequency range of 20–5000 cm{sup −1} at room temperature. The thicknesses and high-frequency dielectric constants of the PbTe and CdTe layers and the frequencies of the transverse optical (TO) phonons in these structures are determined from dispersion analysis of the spectra. It is found that the samples under study are characterized by two TO phonon frequencies, equal to 28 and 47 cm{sup −1}. The first frequency is close to that of TO phonons in bulk PbTe, and the second is assigned to the optical mode in structurally distorted interface layers. The Raman-scattering spectra upon excitation with the radiation of an Ar{sup +} laser at 514.5 nm are measured at room and liquid-nitrogen temperatures. The weak line at 106 cm{sup −1} observed in these spectra is attributed to longitudinal optical phonons in the interface layers.

  9. Recycling of CdTe photovoltaic waste

    DOEpatents

    Goozner, Robert E.; Long, Mark O.; Drinkard, Jr., William F.

    1999-01-01

    A method for extracting and reclaiming metals from scrap CdTe photovoltaic cells and manufacturing waste by leaching the waste with a leaching solution comprising nitric acid and water, skimming any plastic material from the top of the leaching solution, separating the glass substrate from the liquid leachate and electrolyzing the leachate to separate Cd from Te, wherein the Te is deposits onto a cathode while the Cd remains in solution.

  10. TE Connectivity Finds Answers in Tomography

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    healthcare, aerospace, and defense industries. TE Connectivity has a long-standing commitment to innovation and engineering excellence. Their products help address challenges...

  11. Te

    Energy Information Administration (EIA) (indexed site)

    9 8 7 6 5 4 3 2 1 9 8 7 6 5 4 3 2 1 11 10 25 24 23 22 21 20 18 17 16 15 14 13 12 11 10 19 10°W 20°W 30°W 40°W 50°W 60°W 70°W 70°W 80°W 80°W 90°W 90°W 100°W 100°W 110°W 110°W 120°W 120°W 130°W 130°W 140°W 140°W 150°W 150°W 160°W 170°W 180° 170°E 160°E 150°E 140°E 70°N 70°N 60°N 60°N 50°N 50°N 40°N 40°N 30°N 30°N 20°N 20°N 10°N 10°N # &   &  & # ' '  "  '  #      ( &  

  12. Te

    Energy Information Administration (EIA) (indexed site)

    4 3 2 1 9 8 7 6 5 4 3 2 1 20 19 18 17 16 15 14 13 12 11 10 10°W 20°W 30°W 40°W 50°W 60°W 70°W 70°W 80°W 80°W 90°W 90°W 100°W 100°W 110°W 110°W 120°W 120°W 130°W 130°W 140°W 140°W 150°W 150°W 160°W 170°W 180° 170°E 160°E 150°E 140°E 70°N 70°N 60°N 60°N 50°N 50°N 40°N 40°N 30°N 30°N 20°N 20°N 10°N 10°N 0 250 500 750 1,000 125 Miles / Millas / Milles 1:12 000 000 Border Crossings of Liquids Pipelines, North America Cruces Fronterizos de Ductos de

  13. Te

    Energy Information Administration (EIA) (indexed site)

    9 8 7 6 5 4 3 2 1 9 8 7 6 5 4 3 2 1 15 14 13 12 11 10 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 10°W 20°W 30°W 40°W 50°W 60°W 70°W 70°W 80°W 80°W 90°W 90°W 100°W 100°W 110°W 110°W 120°W 120°W 130°W 130°W 140°W 140°W 150°W 150°W 160°W 170°W 180° 170°E 160°E 150°E 140°E 70°N 70°N 60°N 60°N 50°N 50°N 40°N 40°N 30°N 30°N 20°N 20°N 10°N 10°N Border Crossings of Natural Gas Pipelines, North America Cruces Fronterizos de Ductos de Gas Natural,

  14. Te

    Energy Information Administration (EIA) (indexed site)

    10°W 20°W 30°W 40°W 50°W 60°W 70°W 70°W 80°W 80°W 90°W 90°W 100°W 100°W 110°W 110°W 120°W 120°W 130°W 130°W 140°W 140°W 150°W 150°W 160°W 170°W 180° 170°E 160°E 150°E 140°E 70°N 70°N 60°N 60°N 50°N 50°N 40°N 40°N 30°N 30°N 20°N 20°N 10°N 10°N 0 250 500 750 1,000 125 Miles / Millas / Milles 1:12 000 000 Coal Carbón Charbon Petroleum Petrolíferos Pétrole Geothermal Geotérmica Géothermie Hydroelectric Hidroeléctrica Hydroélectrique Natural Gas Gas

  15. Te

    Energy Information Administration (EIA) (indexed site)

         + + 2 )  3 " /  $ "     ( % * !  6      / , * " ! & ,   + 2 )    ( % * ! <       , 6" + + "   + + 2" ))"     ( % * '/   , ) /   " 0, 2/ " 0      & / " 1   , / *  )

  16. Te

    Energy Information Administration (EIA) (indexed site)

         - - 4 +   5 $ 1 & $     * ' , # 8       1. , $ # (.   - 4 +     * ' , # >      . 8 $ - - $   - - 4 $ + + $     * ' , )1  . + 1  $ 2. 4 1" $ 2      + . ! +   . 1(9 . - 3 +   11 # ( - " $   $ " 4 12.   . + 1  

  17. Te

    Energy Information Administration (EIA) (indexed site)

    0&1; &27; , )&30; & " 0&6; &1; &25; &27; &23;&1; &19; + 0, )" & ))" * " + 1 &1; &24; , * &30; )&1; &18; & " 1 &5; O c a n P a c i f i q u e P a c i f i c O c e a n O c a n o P a c f i c o O c a n A t l ...

  18. Te

    Energy Information Administration (EIA) (indexed site)

    &29; . + (1 2&6; &1; &27; &29; &25;&1; &19; - 2. + (+ + , - 3 &1; &21; . 1(9 . - 3 + &1; &20; + . + &5; O c a n P a c i f i q u e P a c i f i c O c e a n O c a n o P a c f i c o O c a n A t l ...

  19. CdTe devices and method of manufacturing same

    SciTech Connect

    Gessert, Timothy A.; Noufi, Rommel; Dhere, Ramesh G.; Albin, David S.; Barnes, Teresa; Burst, James; Duenow, Joel N.; Reese, Matthew

    2015-09-29

    A method of producing polycrystalline CdTe materials and devices that incorporate the polycrystalline CdTe materials are provided. In particular, a method of producing polycrystalline p-doped CdTe thin films for use in CdTe solar cells in which the CdTe thin films possess enhanced acceptor densities and minority carrier lifetimes, resulting in enhanced efficiency of the solar cells containing the CdTe material are provided.

  20. Recycling of CdTe photovoltaic waste

    DOEpatents

    Goozner, Robert E.; Long, Mark O.; Drinkard, Jr., William F.

    1999-04-27

    A method for extracting and reclaiming metals from scrap CdTe photovoltaic cells and manufacturing waste by leaching the metals in dilute nitric acid, leaching the waste with a leaching solution comprising nitric acid and water, skimming any plastic material from the top of the leaching solution, separating the glass substrate from the liquid leachate, adding a calcium containing base to the leachate to precipitate Cd and Te, separating the precipitated Cd and Te from the leachate, and recovering the calcium-containing base.

  1. Recycling of CdTe photovoltaic waste

    DOEpatents

    Goozner, R.E.; Long, M.O.; Drinkard, W.F. Jr.

    1999-04-27

    A method for extracting and reclaiming metals from scrap CdTe photovoltaic cells and manufacturing waste by leaching the metals in dilute nitric acid, leaching the waste with a leaching solution comprising nitric acid and water, skimming any plastic material from the top of the leaching solution, separating the glass substrate from the liquid leachate, adding a calcium containing base to the leachate to precipitate Cd and Te, separating the precipitated Cd and Te from the leachate, and recovering the calcium-containing base. 3 figs.

  2. Nonlinear terahertz response of HgTe/CdTe quantum wells

    SciTech Connect

    Chen, Qinjun; Sanderson, Matthew; Zhang, Chao

    2015-08-24

    Without breaking the topological order, HgTe/CdTe quantum wells can have two types of bulk band structure: direct gap type (type I) and indirect gap type (type II). We report that the strong nonlinear optical responses exist in both types of bulk states under a moderate electric field in the terahertz regime. Interestingly, for the type II band structure, the third order conductivity changes sign when chemical potentials lies below 10 meV due to the significant response of the hole excitation close to the bottom of conduction band. Negative nonlinear conductivities suggest that HgTe/CdTe quantum wells can find application in the gain medium of a laser for terahertz radiation. The thermal influences on nonlinear optical responses of HgTe/CdTe quantum wells are also studied.

  3. Thermodynamic and Transport Properties of YTe3, LaTe3 and CeTe3

    SciTech Connect

    Ru, N.

    2011-08-19

    Measurements of heat capacity, susceptibility, and electrical resistivity are presented for single crystals of the charge density wave compounds YTe{sub 3}, LaTe{sub 3}, and CeTe{sub 3}. The materials are metallic to low temperatures, but have a small density of states due to the charge density wave gapping large portions of the Fermi surface. CeTe{sub 3} is found to be a weak Kondo lattice, with an antiferromagnetic ground state and T{sub N} = 2.8 K. The electrical resistivity of all three compounds is highly anisotropic, confirming the weak dispersion perpendicular to Te planes predicted by band structure calculations.

  4. GaTe semiconductor for radiation detection

    DOEpatents

    Payne, Stephen A.; Burger, Arnold; Mandal, Krishna C.

    2009-06-23

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  5. Determination of CdTe bulk carrier lifetime and interface recombination velocity of CdTe/MgCdTe double heterostructures grown by molecular beam epitaxy

    SciTech Connect

    Zhao, Xin-Hao; Campbell, Calli M.; DiNezza, Michael J.; Liu, Shi; Zhao, Yuan; Zhang, Yong-Hang

    2014-12-22

    The bulk Shockley-Read-Hall carrier lifetime of CdTe and interface recombination velocity at the CdTe/Mg{sub 0.24}Cd{sub 0.76}Te heterointerface are estimated to be around 0.5??s and (4.7??0.4)??10{sup 2?}cm/s, respectively, using time-resolved photoluminescence (PL) measurements. Four CdTe/MgCdTe double heterostructures (DHs) with varying CdTe layer thicknesses were grown on nearly lattice-matched InSb (001) substrates using molecular beam epitaxy. The longest lifetime of 179?ns is observed in the DH with a 2??m thick CdTe layer. It is also shown that the photon recycling effect has a strong influence on the bulk radiative lifetime, and the reabsorption process affects the measured PL spectrum shape and intensity.

  6. Thermoelectric properties of p-type PbTe/Ag{sub 2}Te bulk composites by extrinsic phase mixing

    SciTech Connect

    Lee, Min Ho; Rhyee, Jong-Soo

    2015-12-15

    We investigated the thermoelectric properties of PbTe/Ag{sub 2}Te bulk composites, synthesized by hand milling, mixing, and hot press sintering. From x-ray diffraction and energy dispersive x-ray spectroscopy measurements, we observed Ag{sub 2}Te phase separation in the PbTe matrix without Ag atom diffusion. In comparison with previously reported pseudo-binary (PbTe){sub 1−x}(Ag{sub 2}Te){sub x} composites, synthesized by high temperature phase separation, the PbTe/Ag{sub 2}Te bulk composites fabricated with a low temperature phase mixing process give rise to p-type conduction of carriers with significantly decreased electrical conductivity. This indicates that Ag atom diffusion in the PbTe matrix changes the sign of the Seebeck coefficient to n-type and also increases the carrier concentration. Effective p-type doping with low temperature phase separation by mixing and hot press sintering can enhance the thermoelectric performance of PbTe/Ag{sub 2}Te bulk composites, which can be used as a p-type counterpart of n-type (PbTe){sub 1−x}(Ag{sub 2}Te){sub x} bulk composites.

  7. Post-Growth Annealing of Bridgman-grown CdZnTe and CdMnTe Crystals...

    Office of Scientific and Technical Information (OSTI)

    temperature gradient, we observed the migration of Te inclusions from a low-temperature ... These results show that the migration, diffusion, and reaction of Te with Cd in the matrix ...

  8. Post-Growth Annealing of Bridgman-grown CdZnTe and CdMnTe Crystals...

    Office of Scientific and Technical Information (OSTI)

    Nuclear Radiation Detectors Citation Details In-Document Search Title: Post-Growth Annealing of Bridgman-grown CdZnTe and CdMnTe Crystals for Room-temperature Nuclear ...

  9. Effect and optimization of CdS/CdTe interdiffusion on CdTe electrical properties and CdS/CdTe cell performance

    SciTech Connect

    Song, W.; Mao, D.; Kaydanov, V.; Ohno, T.R.; Trefny, J.V.; Levi, D.H.; Johnston, S. McCandless, B.E.

    1999-03-01

    We have investigated the effect of the CdS/CdTe interdiffusion on the properties of the CdTe films and the CdS/CdTe cell performance. Sulfur (S) diffusion into the CdTe films leads to a decreased defect density in the films, improvement of cell performance, and possibly to the increase of the carrier lifetime in the films. Cell performance is improved with the increase of the amount of S in the CdTe films. S diffusion into CdTe also deteriorates the uniformity of the CdS window layers, resulting in worse cell performance. Based on this study, we propose a processing method to improve cell performance. {copyright} {ital 1999 American Institute of Physics.}

  10. Teton County, Wyoming: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    TriLateral Energy LLC Places in Teton County, Wyoming Alta, Wyoming Hoback, Wyoming Jackson, Wyoming Moose Wilson Road, Wyoming Rafter J Ranch, Wyoming South Park, Wyoming Teton...

  11. New chalcogenide glasses in the CdTe-AgI-As{sub 2}Te{sub 3} system

    SciTech Connect

    Kassem, M.; Le Coq, D.; Boidin, R.; Bychkov, E.; ULCO, LPCA, EA 4493, F-59140 Dunkerque

    2012-02-15

    Highlights: Black-Right-Pointing-Pointer Determination of the glass-forming region in the pseudo-ternary CdTe-AgI-As{sub 2}Te{sub 3} system. Black-Right-Pointing-Pointer Characterization of macroscopic properties of the new CdTe-AgI-As{sub 2}Te{sub 3} glasses. Black-Right-Pointing-Pointer Characterization of the total conductivity of CdTe-AgI-As{sub 2}Te{sub 3} glasses. Black-Right-Pointing-Pointer Comparison between the selenide and telluride equivalent systems. -- Abstract: Chalcogenide glasses in the pseudo-ternary CdTe-AgI-As{sub 2}Te{sub 3} system were synthesized and the glass-forming range was determined. The maximum content of CdTe in this glass system was found to be equal to 15 mol.%. The macroscopic characterizations of samples have consisted in Differential Scanning Calorimetry, density, and X-ray diffraction measurements. The cadmium telluride addition does not generate any significant change in the glass transition temperature but the resistance of binary AgI-As{sub 2}Te{sub 3} glasses towards crystallisation is estimated to be decreasing on the base of {Delta}T = T{sub x} - T{sub g} parameter. The total electrical conductivity {sigma} was measured by complex impedance spectroscopy. First, the CdTe additions in the (AgI){sub 0.5}(As{sub 2}Te{sub 3}){sub 0.5} host glass, (CdTe){sub x}(AgI){sub 0.5-x/2}(As{sub 2}Te{sub 3}){sub 0.5-x/2} lead to a conductivity decrease at x {<=} 0.05. Then, the behaviour is reversed at 0.05 {<=} x {<=} 0.15. The obtained results are discussed by comparison with the equivalent selenide system.

  12. Surveying The TeV Sky With Milagro

    SciTech Connect

    Walker, G. P.

    2006-11-17

    A wide field of view, high duty factor TeV gamma-ray observatory is essential for studying TeV astrophysical sources, because most of these sources are either highly variable or are extended. Milagro is such a TeV detector and has performed the deepest survey of the Northern Hemisphere sky. In addition to detecting the Crab Nebula and Mrk 421, which are known TeV sources, Milagro has made the first detection of diffuse TeV emission from the Galactic plane. The Milagro data has been searched for unknown point sources and extended sources. A new extended TeV source is seen and is coincident with an EGRET unidentified source. Based on the success of Milagro, a second generation water Cherenkov gamma-ray observatory is planned which will give an increase in sensitivity of more than an order of magnitude.

  13. Luminosity goals for a 100-TeV pp collider

    SciTech Connect

    Hinchliffe, Ian; Kotwal, Ashutosh; Mangano, Michelangelo L.; Quigg, Chris; Wang, Lian-Tao

    2015-08-20

    We consider diverse examples of science goals that provide a framework to assess luminosity goals for a future 100-TeV proton-proton collider.

  14. Astrophysics and Cosmology with TeV Gamma Rays

    SciTech Connect

    Aharonian, Felix

    2005-07-13

    I will discuss the astrophysical and cosmological implications of recent exciting discoveries of TeV gamma-rays from objects representing several Galactic and Extragalactic source populations.

  15. High Performance Zintl Phase TE Materials with Embedded Particles...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Presents results from embedding nanoparticles in magnesium silicide alloy matrix ... Zintl Phase Materials with Embedded Nanoparticles High performance Zintl phase TE ...

  16. Interface passivation and contacts in CdTe

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    SunUP - CdTe Interfaces and Contacts Teresa Barnes October 18, 2016 2 GW Production with Dramatic Efficiency Improvements CdTe efficiency increased from 17% to 22% in six years! 3 Module and Cell Efficiencies for Commercial PV Cell Module 4 Silicon Module Prices http://www.nrel.gov/docs/fy16osti/65872.pdf 5 CdTe Module Costs http://www.nrel.gov/docs/fy16osti/65872.pdf 6 7 There Isn't Enough Te on Earth!! Wikipedia, RSC, etc. 8 9 They Will Find More if the Price is Right 10 How Did We Get Here?

  17. Pressure dependence of the charge-density-wave and superconducting states in GdTe3, TbTe3, and DyTe3

    DOE PAGES [OSTI]

    Zocco, D. A.; Hamlin, J. J.; Grube, K.; Chu, J. -H.; Kuo, H. -H.; Fisher, I. R.; Maple, M. B.

    2015-05-14

    Here, we present electrical resistivity and ac-susceptibility measurements of GdTe3, TbTe3 and DyTe3 performed under pressure. An upper charge-density-wave (CDW) is suppressed at a rate of dTCW,1/dP~ –85K/GPa. For TbTe3 and DyTe3, a second CDW below TCDW,2 increases with pressure until it reaches the TCDW,1(P) line. For GdTe3, the lower CDW emerges as pressure is increased above ~1GPa. As these two CDW states are suppressed with pressure, superconductivity (SC) appears in the three compounds at lower temperatures. Ac-susceptibility experiments performed on TbTe3 provide compelling evidence for bulk SC in the low-pressure region of the phase diagram. We provide measurements ofmore » superconducting critical fields and discuss the origin of a high-pressure superconducting phase occurring above 5 GPa.« less

  18. Copper migration in CdTe heterojunction solar cells

    SciTech Connect

    Chou, H.C.; Rohatgi, A.; Jokerst, N.M.; Thomas, E.W.; Kamra, S.

    1996-07-01

    CdTe solar cells were fabricated by depositing a Au/Cu contact with Cu thickness in the range of 50 to 150A on polycrystalline CdTe/CdS/SnO{sub 2} glass structures. The increase in Cu thickness improves ohmic contact and reduces series resistance (R{sub s}), but the excess Cu tends to diffuse into CdTe and lower shunt resistance (R{sub sh}) and cell performance. Light I-V and secondary ion mass spectroscopy (SIMS) measurements were performed to understand the correlations between the Cu contact thickness, the extent of Cu incorporation in the CdTe cells, and its impact on the cell performance. The CdTe/CdS/SnO{sub 2} glass, CdTe/CdS/GaAs, and CdTe/GaAs structures were prepared in an attempt to achieve CdTe films with different degrees of crystallinity and grain size. A large grain polycrystalline CdTe thin film solar cell was obtained for the first time by selective etching the GaAs substrate coupled with the film transfer onto a glass substrate. SIMS measurement showed that poor crystallinity and smaller grain size of the CdTe film promotes Cu diffusion and decreases the cell performance. Therefore, grain boundaries are the main conduits for Cu migration and larger CdTe grain size or alternate method of contact formation can mitigate the adverse effect of Cu and improve the cell performance. 15 refs., 1 fig.,6 tabs.

  19. Thermoelectric device including an alloy of GeTe and AgSbTe as the P-type element

    DOEpatents

    Skrabek, Emanuel Andrew; Trimmer, Donald Smith

    1976-01-01

    Improved alloys suitable for thermoelectric applications and having the general formula: (AgSbTe.sub.2).sub.1.sub.-x + (GeTe).sub.x wherein x has a value of about 0.80 and 0.85, have been found to possess unexpectedly high thermoelectric properties such as efficiency index, as well as other improved physical properties.

  20. Multiband Te p Based Superconductivity of Ta4Pd3Te16

    DOE PAGES [OSTI]

    Singh, David J.

    2014-10-06

    We recently discovered that Ta4Pd3Te16 is a superconductor that has been suggested to be an unconventional superconductor near magnetism. Here, we report electronic structure calculations showing that despite the layered crystal structure the material is an anisotropic three-dimensional (3D) metal. The Fermi surface contains prominent one-dimensional (1D) and two-dimensional (2D) features, including nested 1D sheets, a 2D cylindrical section, and a 3D sheet. Moreover, the electronic states that make up the Fermi surface are mostly derived from Te p states with small Ta d and Pd d contributions. This places the compound far from magnetic instabilities. The results are discussedmore » in terms of multiband superconductivity.« less

  1. Use of separate ZnTe interface layers to form OHMIC contacts to p-CdTe films

    DOEpatents

    Gessert, Timothy A.

    1999-01-01

    A method of improving electrical contact to a thin film of a p-type tellurium-containing II-VI semiconductor comprising: depositing a first undoped layer of ZnTe on a thin film of p-type tellurium containing II-VI semiconductor with material properties selected to limit the formation of potential barriers at the interface between the p-CdTe and the undoped layer, to a thickness sufficient to control diffusion of the metallic-doped ZnTe into the p-type tellurim-containing II-VI semiconductor, but thin enough to minimize affects of series resistance; depositing a second heavy doped p-type ZnTe layer to the first layer using an appropriate dopant; and depositing an appropriate metal onto the outer-most surface of the doped ZnTe layer for connecting an external electrical conductor to an ohmic contact.

  2. Use of separate ZnTe interface layers to form ohmic contacts to p-CdTe films

    DOEpatents

    Gessert, T.A.

    1999-06-01

    A method of is disclosed improving electrical contact to a thin film of a p-type tellurium-containing II-VI semiconductor comprising: depositing a first undoped layer of ZnTe on a thin film of p-type tellurium containing II-VI semiconductor with material properties selected to limit the formation of potential barriers at the interface between the p-CdTe and the undoped layer, to a thickness sufficient to control diffusion of the metallic-doped ZnTe into the p-type tellurium-containing II-VI semiconductor, but thin enough to minimize affects of series resistance; depositing a second heavy doped p-type ZnTe layer to the first layer using an appropriate dopant; and depositing an appropriate metal onto the outer-most surface of the doped ZnTe layer for connecting an external electrical conductor to an ohmic contact. 11 figs.

  3. Electrochemically deposited BiTe-based nanowires for thermoelectric applications

    SciTech Connect

    Ng, Inn-Khuan; Kok, Kuan-Ying; Rahman, Che Zuraini Che Ab; Saidin, Nur Ubaidah; Ilias, Suhaila Hani; Choo, Thye-Foo

    2014-02-12

    Nanostructured materials systems such as thin-films and nanowires (NWs) are promising for thermoelectric power generation and refrigeration compared to traditional counterparts in bulk, due to their enhanced thermoelectric figures-of-merit. BiTe and its derivative compounds, in particular, are well-known for their near-room temperature thermoelectric performance. In this work, both the binary and ternary BiTe-based nanowires namely, BiTe and BiSbTe, were synthesized using template-assisted electrodeposition. Diameters of the nanowires were controlled by the pore sizes of the anodised alumina (AAO) templates used. Systematic study on the compositional change as a function of applied potential was carried out via Linear Sweep Voltanmetry (LSV). Chemical compositions of the nanowires were studied using Energy Dispersive X-ray Spectrometry (EDXS) and their microstructures evaluated using diffraction and imaging techniques. Results from chemical analysis on the nanowires indicated that while the Sb content in BiSbTe nanowires increased with more negative deposition potentials, the formation of Te{sup 0} and Bi{sub 2}Te{sub 3} were favorable at more positive potentials.

  4. Surveying the TeV Sky with Milagro

    SciTech Connect

    Lansdell, C. P.

    2006-07-11

    A wide field of view, high duty factor, TeV gamma-ray observatory is essential for studying TeV astrophysical sources, because most of these sources are either highly variable or are extended. Milagro is such a TeV detector and has performed the deepest survey of the Northern Hemisphere sky. In addition to detecting the known TeV sources of the Crab Nebula and Markarian 421, Milagro has made the first detection of diffuse TeV emission from the Galactic plane. The Milagro data has been searched for unknown point sources and extended sources. Evidence for a new extended TeV source is seen and is coincident with an EGRET unidentified source. The Milagro data has also been searched for the predicted TeV emitters of gamma-ray bursts, galaxy clusters, and EGRET unidentified sources. Based on the success of Milagro, a second generation water Cherenkov gamma-ray observatory is planned which will give an increase in sensitivity of more than an order of magnitude.

  5. Process Development for High Voc CdTe Solar Cells

    SciTech Connect

    Ferekides, C. S.; Morel, D. L.

    2011-05-01

    This is a cumulative and final report for Phases I, II and III of this NREL funded project (subcontract # XXL-5-44205-10). The main research activities of this project focused on the open-circuit voltage of the CdTe thin film solar cells. Although, thin film CdTe continues to be one of the leading materials for large-scale cost-effective production of photovoltaics, the efficiency of the CdTe solar cells have been stagnant for the last few years. This report describes and summarizes the results for this 3-year research project.

  6. Cu Migration in Polycrystalline CdTe Solar Cells

    SciTech Connect

    Guo, Da; Akis, Richard; Brinkman, Daniel; Sankin, Igor; Fang, Tian; Vasileska, Dragica; Ringhofer, Christian

    2014-03-12

    An impurity reaction-diffusion model is applied to Cu defects and related intrinsic defects in polycrystalline CdTe for a better understanding of Cu’s role in the cell level reliability of CdTe PV devices. The simulation yields transient Cu distributions in polycrystalline CdTe during solar cell processing and stressing. Preliminary results for Cu migration using available diffusivity and solubility data show that Cu accumulates near the back contact, a phenomena that is commonly observed in devices after back-contact processing or stress conditions.

  7. Ba2TeO: A new layered oxytelluride

    DOE PAGES [OSTI]

    Besara, T.; Ramirez, D.; Sun, J.; Whalen, J. B.; Tokumoto, T. D.; McGill, S. A.; Singh, D. J.; Siegrist, T.

    2015-02-01

    For single crystals of the new semiconducting oxytelluride phase, Ba2TeO, we synthesized from barium oxide powder and elemental tellurium in a molten barium metal flux. Ba2TeO crystallizes in tetragonal symmetry with space group P4/nmm (#129), a=5.0337(1) Å, c=9.9437(4) Å, Z=2. The crystals were characterized by single crystal x-ray diffraction, heat capacity and optical measurements. Moreover, the optical measurements along with electronic band structure calculations indicate semiconductor behavior with a band gap of 2.93 eV. Resistivity measurements show that Ba2TeO is highly insulating.

  8. Electronic properties of GeTe and Ag- or Sb-substituted GeTe studied by low-temperature Te125 NMR

    DOE PAGES [OSTI]

    Cui, J.; Levin, E. M.; Lee, Y.; Furukawa, Y.

    2016-08-18

    We have carried out 125Te nuclear magnetic resonance (NMR) in a wide temperature range of 1.5–300 K to investigate the electronic properties of Ge50 Te50, Ag2 Ge48Te50 , and Sb2 Ge48 Te50 from a microscopic point of view. From the temperature dependence of the NMR shift (K) and nuclear spin lattice relaxation rate (1/T1), we found that two bands contribute to the physical properties of the materials. One band overlaps the Fermi level providing the metallic state where no strong electron correlations are revealed by Korringa analysis. The other band is separated from the Fermi level by an energy gapmore » of Eg/kB ~67 K, which gives rise to semiconductorlike properties. First-principles calculation reveals that the metallic band originates from the Ge vacancy while the semiconductorlike band is related to the fine structure of the density of states near the Fermi level. We find low-temperature Te125 NMR data for the materials studied here clearly show that Ag substitution increases hole concentration while Sb substitution decreases it.« less

  9. Modeling Copper Diffusion in Polycrystalline CdTe Solar Cells

    SciTech Connect

    Akis, Richard; Brinkman, Daniel; Sankin, Igor; Fang, Tian; Guo, Da; Vasileska, Dragica; Ringhofer, Christain

    2014-06-06

    It is well known that Cu plays an important role in CdTe solar cell performance as a dopant. In this work, a finite-difference method is developed and used to simulate Cu diffusion in CdTe solar cells. In the simulations, which are done on a two-dimensional (2D) domain, the CdTe is assumed to be polycrystalline, with the individual grains separated by grain boundaries. When used to fit experimental Cu concentration data, bulk and grain boundary diffusion coefficients and activation energies for CdTe can be extracted. In the past, diffusion coefficients have been typically obtained by fitting data to simple functional forms of limited validity. By doing full simulations, the simplifying assumptions used in those analytical models are avoided and diffusion parameters can thus be determined more accurately

  10. CdTe Solar Cells: The Role of Copper

    SciTech Connect

    Guo, Da; Akis, Richard; Brinkman, Daniel; Sankin, Igor; Fang, Tian; Vasileska, Dragica; Ringhofer, Christain

    2014-06-06

    In this work, we report on developing 1D reaction-diffusion solver to understand the kinetics of p-type doping formation in CdTe absorbers and to shine some light on underlying causes of metastabilities observed in CdTe PV devices. Evolution of intrinsic and Cu-related defects in CdTe solar cell has been studied in time-space domain self-consistently with free carrier transport and Poisson equation. Resulting device performance was simulated as a function of Cu diffusion anneal time showing pronounced effect the evolution of associated acceptor and donor states can cause on device characteristics. Although 1D simulation has intrinsic limitations when applied to poly-crystalline films, the results suggest strong potential of the approach in better understanding of the performance and metastabilities of CdTe photovoltaic device.

  11. Extreme solid state refrigeration using nanostructured Bi-Te alloys.

    SciTech Connect

    Lima Sharma, Ana L.; Spataru, Dan Catalin; Medlin, Douglas L.; Sharma, Peter Anand; Morales, Alfredo Martin

    2009-09-01

    Materials are desperately needed for cryogenic solid state refrigeration. We have investigated nanostructured Bi-Te alloys for their potential use in Ettingshausen refrigeration to liquid nitrogen temperatures. These alloys form alternating layers of Bi{sub 2} and Bi{sub 2}Te{sub 3} blocks in equilibrium. The composition Bi{sub 4}Te{sub 3} was identified as having the greatest potential for having a high Ettingshausen figure of merit. Both single crystal and polycrystalline forms of this material were synthesized. After evaluating the Ettingshausen figure of merit for a large, high quality polycrystal, we simulated the limits of practical refrigeration in this material from 200 to 77 K using a simple device model. The band structure was also computed and compared to experiments. We discuss the crystal growth, transport physics, and practical refrigeration potential of Bi-Te alloys.

  12. Native defects in MBE-grown CdTe

    SciTech Connect

    Olender, Karolina; Wosinski, Tadeusz; Makosa, Andrzej; Tkaczyk, Zbigniew; Kolkovsky, Valery; Karczewski, Grzegorz

    2013-12-04

    Deep-level traps in both n- and p-type CdTe layers, grown by molecular-beam epitaxy on GaAs substrates, have been investigated by means of deep-level transient spectroscopy (DLTS). Four of the traps revealed in the DLTS spectra, which displayed exponential kinetics for capture of charge carriers into the trap states, have been assigned to native point defects: Cd interstitial, Cd vacancy, Te antisite defect and a complex formed of the Te antisite and Cd vacancy. Three further traps, displaying logarithmic capture kinetics, have been ascribed to electron states of treading dislocations generated at the mismatched interface with the substrate and propagated through the CdTe layer.

  13. PVA TePla AG | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    search Name: PVA TePla AG Place: Asslar, Germany Zip: 35614 Product: Supplier of plants and equipment for vacuum systems, crystal-growing systems and plasma systems, some of...

  14. Summary of the TeV33 working group

    SciTech Connect

    Bagley, P.P.; Bieniosek, F.M.; Colestock, P.

    1996-10-01

    This summary of the TeV33 working group at Snowmass reports on work in the areas of Tevatron store parameters, the beam-beam interaction, Main Injector intensity (slip stacking), antiproton production, and electron cooling.

  15. Extracting Cu Diffusion Parameters in Polycrystalline CdTe

    SciTech Connect

    Akis, Richard; Brinkman, Daniel; Sankin, Igor; Fang, Tian; Guo, Da; Dragica, Vasileska; Ringhofer, Christian

    2014-06-13

    It is well known that Cu plays an important role in CdTe solar cell performance as a dopant. In this work, a finite-difference method is developed and used to simulate Cu diffusion in CdTe solar cells. In the simulations, which are done on a two-dimensional (2D) domain, the CdTe is assumed to be polycrystal-line, with the individual grains separated by grain boundaries. When used to fit experimental Cu concentration data, bulk and grain boundary diffusion coefficients and activation energies for CdTe can be extracted. In the past, diffusion coefficients have been typically obtained by fitting data to simple functional forms of limited validity. By doing full simulations, the simplifying assumptions used in those analytical models are avoided and diffusion parameters can thus be determined more accurately.

  16. Substrate CdTe Efficiency Improvements - Energy Innovation Portal

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Substrate CdTe Efficiency Improvements National Renewable Energy Laboratory Contact NREL About This Technology Publications: PDF Document Publication 11-28PCT Application as-published (984 KB) Technology Marketing Summary Thin film solar cells have been the focus of many research facilities in recent years that are working to decrease manufacturing costs and increase cell efficiency. Cadmium telluride (CdTe) has been well recognized as a promising photovoltaic material for thin film solar cells

  17. Suzanne G.E. te Velthuis | Argonne National Laboratory

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Suzanne G.E. te Velthuis Physicist Dr. Suzanne te Velthuis, physicist in the Neutron and X-ray Scattering group in the Materials Science Division, has been studying the physics of magnetic thin films and nanostructures throughout her career, focusing on using techniques such as neutron scattering, NMR, XMCD and magneto-optical Kerr microscopy. She was instrument scientist of the POSY1 polarized neutron reflectometer at IPNS from 2001 until the shutdown of that facility in 2009 and consequently

  18. Battle Mountain Band - Te-Moak: Solar Energy Park

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Battle Mountain Band - Te-Moak Chairman Joseph Holley and Vice-chairman Mark Oppenhein, Members Donna Hill, Delbert Holley, Lydia Johnson, and Lydell Oppenhein Solar Energy Park DOE/Te-Moak Grant EE0005632 Tribal Energy Program Review March 26, 2014 Presented By: Brenda Gilbert Program Manager 775-345-5261 Brenda@becnv.com Donna Hill Project Manager Battle Mountain Band 775-635-2004 coordinatorbmbc@hotmail.com Joe Bourg Chief Executive Officer Millennium Energy, LLC 303-526-2972

  19. High-quality CdTe films from nanoparticle precursors

    SciTech Connect

    Schulz, D.L.; Pehnt, M.; Urgiles, E.

    1996-05-01

    In this paper the authors demonstrate that nanoparticulate precursors coupled with spray deposition offers an attractive route into electronic materials with improved smoothness, density, and lower processing temperatures. Employing a metathesis approach, cadmium iodide was reacted with sodium telluride in methanol solvent, resulting in the formation of soluble NaI and insoluble CdTe nanoparticles. After appropriate chemical workup, methanol-capped CdTe colloids were isolated. CdTe thin film formation was achieved by spray depositing the nanoparticle colloids (25-75 {Angstrom} diameter) onto substrates at elevated temperatures (T = 280-440{degrees}C) with no further thermal treatment. These films were characterized by x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). Cubic CdTe phase formation was observed by XRD, with a contaminant oxide phase also detected. XPS analysis showed that CdTe films produced by this one-step method contained no Na or C and substantial O. AFM gave CdTe grain sizes of {approx}0.1-0.3 {mu}m for film sprayed at 400{degrees}C. A layer-by-layer film growth mechanism proposed for the one-step spray deposition of nanoparticle precursors will be discussed.

  20. Phonon self-energy and origin of anomalous neutron scattering spectra in SnTe and PbTe thermoelectrics

    SciTech Connect

    Li, Chen [ORNL] [ORNL; Ma, Jie [ORNL] [ORNL; May, Andrew F [ORNL] [ORNL; Cao, Huibo [ORNL] [ORNL; Christianson, Andrew D [ORNL] [ORNL; Ehlers, Georg [ORNL] [ORNL; Singh, David J [ORNL] [ORNL; Sales, Brian C [ORNL] [ORNL; Delaire, Olivier A [ORNL] [ORNL

    2014-01-01

    The anharmonic lattice dynamics of rock-salt thermoelectric compounds SnTe and PbTe are investigated with inelastic neutron scattering (INS) and first-principles calculations. The experiments show that, surprisingly, although SnTe is closer to the ferroelectric instability, phonon spectra in PbTe exhibit a more anharmonic character. This behavior is reproduced in first-principles calculations of the temperature-dependent phonon self-energy. Our simulations reveal how the nesting of phonon dispersions induces prominent features in the self-energy, which account for the measured INS spectra and their temperature dependence. We establish that the phase-space for three-phonon scattering processes, rather than just the proximity to the lattice instability, is the mechanism determining the complex spectrum of the transverse-optical ferroelectric mode.

  1. Effects of Cu Diffusion from ZnTe:Cu/Ti Contacts on Carrier Lifetime of CdS/CdTe Thin Film Solar Cells: Preprint

    SciTech Connect

    Gessert, T. A.; Metzger, W. K.; Asher, S. E.; Young, M. R.; Johnston, S.; Dhere, R. G.; Duda, A.

    2008-05-01

    We study the performance of CdS/CdTe thin film PV devices processed with a ZnTe:Cu/Ti contact to investigate how carrier lifetime in the CdTe layer is affected by Cu diffusion from the contact.

  2. Local composition and carrier concentration in Pb0.7Ge0.3Te and Pb0.5Ge0.5Te alloys from 125Te NMR and microscopy

    SciTech Connect

    Levin, E M; Kramer, M J; Schmidt-Rohr, K

    2014-11-01

    Pb0.7Ge0.3Te and Pb0.5Ge0.5Te alloys, (i) quenched from 923 K or (ii) quenched and annealed at 573 K for 2 h, have been studied by 125Te NMR, X-ray diffraction, electron and optical microscopy, as well as energy dispersive spectroscopy. Depending on the composition and thermal treatment history, 125Te NMR spectra exhibit different resonance frequencies and spin-lattice relaxation times, which can be assigned to different phases in the alloy. Quenched and annealed Pb0.7Ge0.3Te alloys can be considered as solid solutions but are shown by NMR to have components with various carrier concentrations. Quenched and annealed Pb0.5Ge0.5Te alloys contain GeTe- and PbTe-based phases with different compositions and charge carrier concentrations. Based on the analysis of non-exponential 125Te NMR spin-lattice relaxation, the fractions and carrier concentrations of the various phases have been estimated. Our data show that alloying of PbTe with Ge results in the formation of chemically and electronically inhomogeneous systems. 125Te NMR can be used as an efficient probe to detect the local composition in equilibrium as well as non-equilibrium states, and to determine the local carrier concentrations in complex multiphase tellurides.

  3. Thermoelectric properties and nonstoichiometry of GaGeTe

    SciTech Connect

    Drasar, C.; Kucek, V.; Benes, L.; Lostak, P.; Vlcek, M.

    2012-09-15

    Polycrystalline samples of composition Ga{sub 1+x}Ge{sub 1-x}Te (x=-0.03 Division-Sign 0.07) and GaGeTe{sub 1-y} (y=-0.02 Division-Sign 0.02) were synthesized from elements of 5 N purity using a solid state reaction. The products of synthesis were identified by X-ray diffraction; phase purity and microstructure were examined by EDX/SEM. Samples for measurement of transport properties were prepared using hot-pressing. They were characterized by measurement of electrical conductivity, the Hall coefficient, and the Seebeck coefficient over a temperature range 80-480 K and of thermal conductivity over a temperature range 300-580 K. All samples show p-type conductivity. We discuss the influence of stoichiometry on the phase purity of the samples and on free carrier concentration. The investigation of thermoelectric properties shows that the power factor of these samples is low compared to state-of-the-art materials at room temperature but increases distinctly with temperature. - Graphical abstract: Structure and preparation of GaGeTe. Electrical conductivity {sigma}, the Hall coefficient R{sub H}, the Seebeck coefficient S and thermal conductivity {kappa} as a function of temperature for the Ga{sub 1.01}Ge{sub 0.99}Te{sub 0.99} sample. Highlights: Black-Right-Pointing-Pointer We explore thermoelectric and transport properties of Ga{sub 1+x}Ge{sub 1-x}Te and GaGeTe{sub 1-y}. Black-Right-Pointing-Pointer GaGeTe is p-type degenerate semiconductor; the hole concentration increase with x and y. Black-Right-Pointing-Pointer Maximum power factor {sigma}S{sup 2}=3.6 Multiplication-Sign 10{sup -4} Wm{sup -1} K{sup -2} at 475 K.

  4. Heterojunctions of model CdTe/CdSe mixtures

    DOE PAGES [OSTI]

    van Swol, Frank; Zhou, Xiaowang W.; Challa, Sivakumar R.; Martin, James E.

    2015-03-18

    We report on the strain behavior of compound mixtures of model group II-VI semiconductors. We use the Stillinger-Weber Hamiltonian that we recently introduced, specifically developed to model binary mixtures of group II-VI compounds such as CdTe and CdSe. We also employ molecular dynamics simulations to examine the behavior of thin sheets of material, bilayers of CdTe and CdSe. The lattice mismatch between the two compounds leads to a strong bending of the entire sheet, with about a 0.5 to 1° deflection between neighboring planes. To further analyze bilayer bending, we introduce a simple one-dimensional model and use energy minimization tomore » find the angle of deflection. The analysis is equivalent to a least-squares straight line fit. We consider the effects of bilayers which are asymmetric with respect to the thickness of the CdTe and CdSe parts. We thus learn that the bending can be subdivided into four kinds depending on the compressive/tensile nature of each outer plane of the sheet. We use this approach to directly compare our findings with experimental results on the bending of CdTe/CdSe rods. To reduce the effects of the lattice mismatch we explore diffuse interfaces, where we mix (i.e. alloy) Te and Se, and estimate the strain response.« less

  5. Heterojunctions of model CdTe/CdSe mixtures

    SciTech Connect

    van Swol, Frank; Zhou, Xiaowang W.; Challa, Sivakumar R.; Martin, James E.

    2015-03-18

    We report on the strain behavior of compound mixtures of model group IIVI semiconductors. We use the StillingerWeber Hamiltonian that we recently introduced, specifically developed to model binary mixtures of group IIVI compounds such as CdTe and CdSe. We also employ molecular dynamics simulations to examine the behavior of thin sheets of material, bilayers of CdTe and CdSe. The lattice mismatch between the two compounds leads to a strong bending of the entire sheet, with about a 0.5 to 1 deflection between neighboring planes. To further analyze bilayer bending, we introduce a simple one-dimensional model and use energy minimization to find the angle of deflection. The analysis is equivalent to a least-squares straight line fit. We consider the effects of bilayers which are asymmetric with respect to the thickness of the CdTe and CdSe parts. We thus learn that the bending can be subdivided into four kinds depending on the compressive/tensile nature of each outer plane of the sheet. We use this approach to directly compare our findings with experimental results on the bending of CdTe/CdSe rods. To reduce the effects of the lattice mismatch we explore diffuse interfaces, where we mix (i.e. alloy) Te and Se, and estimate the strain response.

  6. Heterojunctions of model CdTe/CdSe mixtures

    SciTech Connect

    van Swol, Frank; Zhou, Xiaowang W.; Challa, Sivakumar R.; Martin, James E.

    2015-03-18

    We report on the strain behavior of compound mixtures of model group II-VI semiconductors. We use the Stillinger-Weber Hamiltonian that we recently introduced, specifically developed to model binary mixtures of group II-VI compounds such as CdTe and CdSe. We also employ molecular dynamics simulations to examine the behavior of thin sheets of material, bilayers of CdTe and CdSe. The lattice mismatch between the two compounds leads to a strong bending of the entire sheet, with about a 0.5 to 1° deflection between neighboring planes. To further analyze bilayer bending, we introduce a simple one-dimensional model and use energy minimization to find the angle of deflection. The analysis is equivalent to a least-squares straight line fit. We consider the effects of bilayers which are asymmetric with respect to the thickness of the CdTe and CdSe parts. We thus learn that the bending can be subdivided into four kinds depending on the compressive/tensile nature of each outer plane of the sheet. We use this approach to directly compare our findings with experimental results on the bending of CdTe/CdSe rods. To reduce the effects of the lattice mismatch we explore diffuse interfaces, where we mix (i.e. alloy) Te and Se, and estimate the strain response.

  7. The half-life of {sup 131g,m}Te

    SciTech Connect

    Ruivo, J. C.; Zamboni, C. B.; Oliveira, J. R. B.; Heder Medina, Nilberto

    2013-05-06

    In this work, the half-lives of {sup 131m}Te and {sup 131g}Te were measured. Radioactive sources of {sup 131}Te were obtained using the {sup 130}Te(n,{gamma}){sup 131}Te nuclear reaction. These nuclear parameters have been determined with a better confidence and accuracy than previously available: 18.89 {+-} 0.11 min and 33.18 {+-} 0.13 h, respectively. These results are quite helpful for new calculations that attempt to describe the low-lying levels in {sup 131}I from the decay of {sup 131g,m}Te.

  8. Growth, steady-state, and time-resolved photoluminescence study of CdTe/MgCdTe double heterostructures on InSb substrates using molecular beam epitaxy

    SciTech Connect

    DiNezza, Michael J.; Liu, Shi; Kirk, Alexander P.; Zhang, Yong-Hang; School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287 ; Zhao, Xin-Hao; School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287

    2013-11-04

    CdTe/MgCdTe double heterostructures (DHs) are grown on InSb substrates using molecular beam epitaxy and reveal strong photoluminescence with over double the intensity of a GaAs/AlGaAs DH with an identical layer structure design grown on GaAs. Time-resolved photoluminescence of the CdTe/MgCdTe DH gives a Shockley-Read-Hall recombination lifetime of 86 ns, which is more than one order of magnitude longer than that of typical polycrystalline CdTe films. These findings indicate that monocrystalline CdTe/MgCdTe DHs effectively reduce surface recombination, have limited nonradiative interface recombination, and are promising for solar cells that could reach power conversion efficiencies similar to that of GaAs.

  9. Resetting the Defect Chemistry in CdTe

    SciTech Connect

    Metzger, Wyatt K.; Burst, James; Albin, David; Colegrove, Eric; Moseley, John; Duenow, Joel; Farrell, Stuart; Moutinho, Helio; Reese, Matt; Johnston, Steve; Barnes, Teresa; Perkins, Craig; Guthrey, Harvey; Al-Jassim, Mowafak

    2015-06-14

    CdTe cell efficiencies have increased from 17% to 21% in the past three years and now rival polycrystalline Si [1]. Research is now targeting 25% to displace Si, attain costs less than 40 cents/W, and reach grid parity. Recent efficiency gains have come largely from greater photocurrent. There is still headroom to lower costs and improve performance by increasing open-circuit voltage (Voc) and fill factor. Record-efficiency CdTe cells have been limited to Voc <; 880 mV, whereas GaAs can attain Voc of 1.10 V with a slightly smaller bandgap [2,3]. To overcome this barrier, we seek to understand and increase lifetime and carrier concentration in CdTe. In polycrystalline structures, lifetime can be limited by interface and grain-boundary recombination, and attaining high carrier concentration is complicated by morphology.

  10. Current enhancement of CdTe-based solar cells

    SciTech Connect

    Paudel, Naba R.; Poplawsky, Jonathan D.; More, Karren Leslie; Yan, Yanfa

    2015-07-30

    We report on the realization of CdTe solar cell photocurrent enhancement using an n-type CdSe heterojunction partner sputtered on commercial SnO2/SnO2:F coated soda-lime glass substrates. With high-temperature close-space sublimation CdTe deposition followed by CdCl2 activation, this thin-film stack allows for substantial interdiffusion at the CdSe/CdTe interface facilitating a CdSexTe1-x alloy formation. The bowing effect causes a reduced optical bandgap of the alloyed absorber layer and, therefore, leads to current enhancement in the long-wavelength region and a decrease in open-circuit voltage (VOC). To overcome the VOC loss and maintain a high short-circuit current (JSC), the CdTe cell configuration has been modified using combined CdS:O/CdSe window layers. The new device structure has demonstrated enhanced collection from both short-and long-wavelength regions as well as a VOC improvement. With an optimized synthesis process, a small-area cell using CdS:O/CdSe window layer showed an efficiency of 15.2% with a VOC of 831 mV, a JSC of 26.3 mA/cm2, and a fill factor of 69.5%, measured under an AM1.5 illumination without antireflection coating. Furthermore, the results provide new directions for further improvement of CdTe-based solar cells.

  11. Synthesis and characterization of Bi-Te-Se thermoelectric materials

    SciTech Connect

    Tripathi, S. K.; Kumari, Ankita; Ridhi, R.; Kaur, Jagdish

    2015-08-28

    Bismuth Telluride (Bi{sub 2}Te{sub 3}) and its related alloys act as a promising thermoelectric material and preferred over other thermoelectric materials due to their high stability and efficiency under ambient conditions. In the present work, we have reported economical, environment friendly and low-temperature aqueous chemical method for the synthesis of Bi-Se-Te alloy. The prepared samples are characterized by X-Ray Diffraction to investigate the structural properties and UV-Visible spectroscopy for the spectroscopic analysis. The absorption spectrum reveals the sensitivity in the ultraviolet as well as in visible region.

  12. Indication of Te segregation in laser-irradiated ZnTe observed by in situ coherent-phonon spectroscopy

    SciTech Connect

    Shimada, Toru; Kamaraju, N.; Frischkorn, Christian; Wolf, Martin; Kampfrath, Tobias

    2014-09-15

    We irradiate a ZnTe single crystal with 10-fs laser pulses at a repetition rate of 80 MHz and investigate its resulting gradual modification by means of coherent-phonon spectroscopy. We observe the emergence of a phonon mode at about 3.6 THz whose amplitude and lifetime grow monotonously with irradiation time. The speed of this process depends sensitively on the pump-pulse duration. Our observations strongly indicate that the emerging phonon mode arises from a Te phase induced by multiphoton absorption of incident laser pulses. A potential application of our findings is laser-machining of microstructures in the bulk of a ZnTe crystal, a highly relevant electrooptic material.

  13. Energy Sources for Yotta-TeV Iceberg Showers (Conference) | SciTech...

    Office of Scientific and Technical Information (OSTI)

    Energy Sources for Yotta-TeV Iceberg Showers Citation Details In-Document Search Title: Energy Sources for Yotta-TeV Iceberg Showers You are accessing a document from the ...

  14. APT mass spectrometry and SEM data for CdTe solar cells

    DOE PAGES [OSTI]

    Li, Chen; Paudel, Naba R.; Yan, Yanfa; Pennycook, Stephen J.; Poplawsky, Jonathan D.; Guo, Wei

    2016-03-16

    Atom probe tomography (APT) data acquired from a CAMECA LEAP 4000 XHR for the CdS/CdTe interface for a non-CdCl2 treated CdTe solar cell as well as the mass spectrum of an APT data set including a GB in a CdCl2-treated CdTe solar cell are presented. Scanning electron microscopy (SEM) data showing the evolution of sample preparation for APT and scanning transmission electron microscopy (STEM) electron beam induced current (EBIC) are also presented. As a result, these data show mass spectrometry peak decomposition of Cu and Te within an APT dataset, the CdS/CdTe interface of an untreated CdTe solar cell, preparationmore » of APT needles from the CdS/CdTe interface in superstrate grown CdTe solar cells, and the preparation of a cross-sectional STEM EBIC sample.« less

  15. Pressure-induced Phase Transition in Thiol-capped CdTe Nanoparticles

    SciTech Connect

    Wu, F; Zaug, J; Young, C; Zhang, J Z

    2006-11-29

    Phase transitions for CdTe nanoparticles (NPs) under high pressure up to 37.0 GPa have been studied using fluorescence measurements. The phase transition from cinnarbar to rocksalt phase has been observed in CdTe NPs solution at 5.8 GPa, which is much higher than the phase transition pressure of bulk CdTe (3.8 GPa) and that of CdTe NPs in solid form (0.8 GPa). CdTe NPs solution therefore shows elevated phase transition pressure and enhanced stability against pressure compared with bulk CdTe and CdTe NPs in solid forms. The enhanced stability of CdTe NPs solution has been attributed to possible shape change in the phase transition and/or inhomogeneous strains in nanoparticle solutions.

  16. Probing TeV physics in the structure of the neutron (Technical...

    Office of Scientific and Technical Information (OSTI)

    Probing TeV physics in the structure of the neutron Citation Details In-Document Search Title: Probing TeV physics in the structure of the neutron You are accessing a document ...

  17. CdTe Thin Film Solar Cells and Modules Tutorial; NREL (National Renewable Energy Laboratory)

    SciTech Connect

    Albin, David S.

    2015-06-13

    This is a tutorial presented at the 42nd IEEE Photovoltaics Specialists Conference to cover the introduction, background, and updates on CdTe cell and module technology, including CdTe cell and module structure and fabrication.

  18. Current enhancement of CdTe-based solar cells (Journal Article...

    Office of Scientific and Technical Information (OSTI)

    Current enhancement of CdTe-based solar cells This content will become publicly available on July 30, 2016 Prev Next Title: Current enhancement of CdTe-based solar cells We ...

  19. Current enhancement of CdTe-based solar cells (Journal Article...

    Office of Scientific and Technical Information (OSTI)

    CdTe-based solar cells Citation Details In-Document Search This content will become publicly available on July 30, 2016 Title: Current enhancement of CdTe-based solar cells We ...

  20. Energy Sources for Yotta-TeV Iceberg Showers (Conference) | SciTech...

    Office of Scientific and Technical Information (OSTI)

    Energy Sources for Yotta-TeV Iceberg Showers Citation Details In-Document Search Title: Energy Sources for Yotta-TeV Iceberg Showers In late February of 2002, warming climate along ...

  1. First-principles study of roles of Cu and Cl in polycrystalline CdTe

    DOE PAGES [OSTI]

    Yang, Ji -Hui; Yin, Wan -Jian; Park, Ji -Sang; Metzger, Wyatt; Wei, Su -Huai

    2016-01-25

    In this study, Cu and Cl treatments are important processes to achieve high efficiency polycrystalline cadmium telluride (CdTe) solar cells, thus it will be beneficial to understand the roles they play in both bulk CdTe and CdTe grain boundaries (GBs). Using first-principles calculations, we systematically study Cu and Cl-related defects in bulk CdTe. We find that Cl has only a limited effect on improving p-type doping and too much Cl can induce deep traps in bulk CdTe, whereas Cu can enhance ptype doping of bulk CdTe. In the presence of GBs, we find that, in general, Cl and Cu willmore » prefer to stay at GBs, especially for those with Te-Te wrong bonds, in agreement with experimental observations.« less

  2. TeV gamma rays from blazars beyond z = 1 ? (Journal Article)...

    Office of Scientific and Technical Information (OSTI)

    TeV gamma rays from blazars beyond z 1 ? Citation Details In-Document Search Title: TeV gamma rays from blazars beyond z 1 ? Authors: Aharonian, Felix ; Essey, Warren ; ...

  3. CsBi4Te6: A High-Performance Thermoelectric Material for Low...

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    thermoelectric properties of CsBi(4)Te(6) appear to match or exceed those of Bi(2-x)Sb(x)Te(3-y)Se(y) alloys. URL: Link to article - National Center for Biotechnology Information

  4. Junction Evolution During Fabrication of CdS/CdTe Thin-film PV Solar Cells (Presentation)

    SciTech Connect

    Gessert, T. A.

    2010-09-01

    Discussion of the formation of CdTe thin-film PV junctions and optimization of CdTe thin-film PV solar cells.

  5. TeVeS gets caught on caustics

    SciTech Connect

    Contaldi, Carlo R.; Wiseman, Toby; Withers, Benjamin

    2008-08-15

    TeVeS uses a dynamical vector field with timelike unit-norm constraint to specify a preferred local frame. When matter moves slowly in this frame--the so-called quasistatic regime--modified Newtonian dynamics results. Theories with such vectors (such as Einstein-Aether) are prone to the vector dynamics forming singularities that render their classical evolution problematic. Here, we analyze the dynamics of the vector in TeVeS in various situations. We begin by analytically showing that the vacuum solution of TeVeS forms caustic singularities under a large class of physically reasonably initial perturbations. This shows the classical evolution of TeVeS appears problematic in the absence of matter. We then consider matter by investigating black hole solutions. We find large classes of new black hole solutions with static geometries, where the curves generated by the vector field are attracted to the black hole and may form caustics. We go on to consider the full dynamics with matter by numerically simulating, assuming spherical symmetry, the gravitational collapse of a scalar, and the evolution of an initially nearly static boson star. We find that in both cases our initial data evolves so that the vector field develops caustic singularities on a time scale of order the gravitational in-fall time. Having shown singularity formation is generic with or without matter, Bekenstein's original formulation of TeVeS appears dynamically problematic. We argue that by modifying the vector field kinetic terms to the more general form used by Einstein-Aether, this problem may be avoided.

  6. Reverse Monte Carlo simulation of Se{sub 80}Te{sub 20} and Se{sub 80}Te{sub 15}Sb{sub 5} glasses

    SciTech Connect

    Abdel-Baset, A. M.; Rashad, M.; Moharram, A. H.

    2013-12-16

    Two-dimensional Monte Carlo of the total pair distribution functions g(r) is determined for Se{sub 80}Te{sub 20} and Se{sub 80}Te{sub 15}Sb{sub 5} alloys, and then it used to assemble the three-dimensional atomic configurations using the reverse Monte Carlo simulation. The partial pair distribution functions g{sub ij}(r) indicate that the basic structure unit in the Se{sub 80}Te{sub 15}Sb{sub 5} glass is di-antimony tri-selenide units connected together through Se-Se and Se-Te chain. The structure of Se{sub 80}Te{sub 20} alloys is a chain of Se-Te and Se-Se in addition to some rings of Se atoms.

  7. On the electronic structure and thermoelectric properties of BiTeBr and BiTeI single crystals and of BiTeI with the addition of BiI{sub 3} and CuI

    SciTech Connect

    Kulbachinskii, Vladimir A.; Kytin, Vladimir G.; Kudryashov, Alexey A.; Kuznetsov, Alexei N.; Shevelkov, Andrei V.

    2012-09-15

    The electronic structures were calculated for BiTeBr and BiTeI using the density-functional theory approach and accounting for the strong spin-orbital interaction. Qualitatively, the band structures for two compounds are similar, showing strong mixing of the p states of all elements in vicinity of the Fermi level, with the band gaps of 0.595 and 0.478 eV for BiTeBr and BiTeI, respectively. The optimized crystal structures show a tendency for the Bi-X (X=Br, I) bond elongation compared to the Bi-Te one. Both compounds are intrinsic n-type semiconductors but display a metallic-like conductivity coupled to rather large thermopower, which is rationalized within the frames of the acoustic phonons scattering model. Because of larger thermopower BiTeBr exhibits a twice higher thermoelectric figure-of-merit near room temperature, ZT=0.17, compared to BiTeI. The addition of 1 mass% of BiI{sub 3} or CuI to BiTeI decreases the mobility of electrons by two orders of magnitude, leading to significantly lower electrical conductivity, but at the same time effectively reduces the thermal conductivity. The prospects of further enhancing the thermoelectric efficiency are briefly discussed. - Graphical abstract: View of the crystal structure of BiTeBr is shown in the figure The optimized crystal structures show a tendency for the Bi-X (X=Br, I) bond elongation compared to the Bi-Te one. The electronic structures were calculated for BiTeBr and BiTeI using the density-functional theory approach and accounting for the strong spin-orbital interaction. Qualitatively, the band structures for two compounds are similar, showing strong mixing of the p states of all elements in vicinity of the Fermi level, with the band gaps of 0.595 and 0.478 eV for BiTeBr and BiTeI, respectively. Both compounds are intrinsic n-type semiconductors but display a metallic-like conductivity coupled to rather large thermopower, which is rationalized within the frames of the acoustic phonons scattering model. The

  8. Superconducting Bi2Te: Pressure-induced universality in the (Bi2)m(Bi2Te3)n series

    DOE PAGES [OSTI]

    Stillwell, Ryan L.; Jeffries, Jason R.; Jenei, Zsolt; Weir, Samuel T.; Vohra, Yogesh K.

    2016-03-09

    Using high-pressure magnetotransport techniques we have discovered superconductivity in Bi2Te, a member of the infinitely adaptive (Bi2)m(Bi2Te3)n series, whose end members, Bi and Bi2Te3, can be tuned to display topological surface states or superconductivity. Bi2Te has a maximum Tc = 8.6 K at P = 14.5 GPa and goes through multiple high pressure phase transitions, ultimately collapsing into a bcc structure that suggests a universal behavior across the series. High-pressure magnetoresistance and Hall measurements suggest a semi-metal to metal transition near 5.4 GPa, which accompanies the hexagonal to intermediate phase transition seen via x-ray diffraction measurements. In addition, the linearitymore » of Hc2 (T) exceeds the Werthamer-Helfand-Hohenberg limit, even in the extreme spin-orbit scattering limit, yet is consistent with other strong spin-orbit materials. Furthermore, considering these results in combination with similar reports on strong spin-orbit scattering materials seen in the literature, we suggest the need for a new theory that can address the unconventional nature of their superconducting states.« less

  9. New μ-SnTe{sub 4} and μ-Sn{sub 2}Te{sub 6} ligands to transition metal:

    Office of Scientific and Technical Information (OSTI)

    Solvothermal syntheses and characterizations of zinc tellurostannates containing polyamine ligands (Journal Article) | SciTech Connect New μ-SnTe{sub 4} and μ-Sn{sub 2}Te{sub 6} ligands to transition metal: Solvothermal syntheses and characterizations of zinc tellurostannates containing polyamine ligands Citation Details In-Document Search Title: New μ-SnTe{sub 4} and μ-Sn{sub 2}Te{sub 6} ligands to transition metal: Solvothermal syntheses and characterizations of zinc tellurostannates

  10. Effect of Ag doping and annealing on thermoelectric properties of PbTe

    SciTech Connect

    Bala, Manju Tripathi, T. S.; Avasthi, D. K.; Asokan, K.; Gupta, Srashti

    2015-06-24

    The present study reveals that annealing Ag doped PbTe thin films enhance thermoelectric properties. Phase formation was identified by using X-ray diffraction measurement. Annealing increases the crystallinity of both undoped and Ag doped PbTe. Electrical resistivity and thermoelectric power measurements are done using four probe and bridge method respectively. The increase in thermoelectric power of Ag doped PbTe is 29 % in comparison to undoped PbTe and it further increases to 34 % after annealing at 250{sup o} C for 1 hour whereas thermoelectric power increases by 14 % on annealing undoped PbTe thin films at same temperature.

  11. Diameter dependent thermoelectric properties of individual SnTe nanowires

    DOE PAGES [OSTI]

    Xu, E. Z.; Li, Z.; Martinez, J. A.; Sinitsyn, N.; Htoon, H.; Li, Nan; Swartzentruber, B.; Hollingsworth, J. A.; Wang, Jian; Zhang, S. X.

    2015-01-15

    The lead-free compound tin telluride (SnTe) has recently been suggested to be a potentially promising thermoelectric material because of its similar electronic band structure as the well-known lead telluride. Here we report on the first thermoelectric study of individual single crystalline SnTe nanowires (NWs) with different diameters ranging from ~200 to ~1000 nm. Measurements of thermopower S, electrical conductivity σ, and thermal conductivity κ were carried out on the same nanowires over a temperature range of 25 - 300 K. While σ does not show a strong diameter dependence, the thermopower increases by a factor of 2 when the nanowiremore » diameter is decreased from 1000 nm to 200 nm. The thermal conductivities of the measured NWs are only about half of that of the bulk SnTe, which may arise from the enhanced phonon-grain boundary and phonon-defect scatterings. Temperature dependent figure-of-merit ZT was determined and the maximum value at room temperature is ~3 times higher than what was obtained in bulk samples of comparable carrier density.« less

  12. Diameter dependent thermoelectric properties of individual SnTe nanowires

    SciTech Connect

    Xu, E. Z.; Li, Z.; Martinez, J. A.; Sinitsyn, N.; Htoon, H.; Li, Nan; Swartzentruber, B.; Hollingsworth, J. A.; Wang, Jian; Zhang, S. X.

    2015-01-15

    The lead-free compound tin telluride (SnTe) has recently been suggested to be a potentially promising thermoelectric material because of its similar electronic band structure as the well-known lead telluride. Here we report on the first thermoelectric study of individual single crystalline SnTe nanowires (NWs) with different diameters ranging from ~200 to ~1000 nm. Measurements of thermopower S, electrical conductivity σ, and thermal conductivity κ were carried out on the same nanowires over a temperature range of 25 - 300 K. While σ does not show a strong diameter dependence, the thermopower increases by a factor of 2 when the nanowire diameter is decreased from 1000 nm to 200 nm. The thermal conductivities of the measured NWs are only about half of that of the bulk SnTe, which may arise from the enhanced phonon-grain boundary and phonon-defect scatterings. Temperature dependent figure-of-merit ZT was determined and the maximum value at room temperature is ~3 times higher than what was obtained in bulk samples of comparable carrier density.

  13. Quantum oscillations in a two-dimensional electron gas at the rocksalt/zincblende interface of PbTe/CdTe (111) heterostructures.

    SciTech Connect

    Zhang, Bingpo; Lu, Ping; Liu, Henan; Jiao, Lin; Ye, Zhenyu; Jaime, M.; Balakirev, F. F.; Yuan, Huiqiu; Wu, Huizhen; Pan, Wei; Zhang, Yong

    2015-06-05

    Quantum oscillations are observed in the 2DEG system at the interface of novel heterostructures, PbTe/CdTe (111), with nearly identical lattice parameters (aPbTe = 0.6462 nm, aCdTe = 0.648 nm) but very different lattice structures (PbTe: rock salt, CdTe: zinc blende). The 2DEG formation mechanism, a mismatch in the bonding configurations of the valence electrons at the interface, is uniquely different from the other known 2DEG systems. The aberration-corrected scanning transmission electron microscope (AC-STEM) characterization indicates an abrupt interface without cation interdiffusion due to a large miscibility gap between the two constituent materials. As a result, electronic transport measurements under magnetic field up to 60 T, with the observation of Landau level filling factor ν = 1, unambiguously reveal a π Berry phase, suggesting the Dirac Fermion nature of the 2DEG at the heterostructure interface, and the PbTe/CdTe heterostructure being a new candidate for 2D topological crystalline insulators.

  14. Quantum oscillations in a two-dimensional electron gas at the rocksalt/zincblende interface of PbTe/CdTe (111) heterostructures

    SciTech Connect

    Zhang, Bingpo; Lu, Ping; Liu, Henan; Jiao, Lin; Ye, Zhenyu; Jaime, M.; Balakirev, F. F.; Yuan, Huiqiu; Wu, Huizhen; Pan, Wei; Zhang, Yong

    2015-06-05

    Quantum oscillations are observed in the 2DEG system at the interface of novel heterostructures, PbTe/CdTe (111), with nearly identical lattice parameters (aPbTe = 0.6462 nm, aCdTe = 0.648 nm) but very different lattice structures (PbTe: rock salt, CdTe: zinc blende). The 2DEG formation mechanism, a mismatch in the bonding configurations of the valence electrons at the interface, is uniquely different from the other known 2DEG systems. The aberration-corrected scanning transmission electron microscope (AC-STEM) characterization indicates an abrupt interface without cation interdiffusion due to a large miscibility gap between the two constituent materials. As a result, electronic transport measurements under magnetic field up to 60 T, with the observation of Landau level filling factor ν = 1, unambiguously reveal a π Berry phase, suggesting the Dirac Fermion nature of the 2DEG at the heterostructure interface, and the PbTe/CdTe heterostructure being a new candidate for 2D topological crystalline insulators.

  15. Quantum oscillations in a two-dimensional electron gas at the rocksalt/zincblende interface of PbTe/CdTe (111) heterostructures

    DOE PAGES [OSTI]

    Zhang, Bingpo; Lu, Ping; Liu, Henan; Jiao, Lin; Ye, Zhenyu; Jaime, M.; Balakirev, F. F.; Yuan, Huiqiu; Wu, Huizhen; Pan, Wei; et al

    2015-06-05

    Quantum oscillations are observed in the 2DEG system at the interface of novel heterostructures, PbTe/CdTe (111), with nearly identical lattice parameters (aPbTe = 0.6462 nm, aCdTe = 0.648 nm) but very different lattice structures (PbTe: rock salt, CdTe: zinc blende). The 2DEG formation mechanism, a mismatch in the bonding configurations of the valence electrons at the interface, is uniquely different from the other known 2DEG systems. The aberration-corrected scanning transmission electron microscope (AC-STEM) characterization indicates an abrupt interface without cation interdiffusion due to a large miscibility gap between the two constituent materials. As a result, electronic transport measurements under magneticmore » field up to 60 T, with the observation of Landau level filling factor ν = 1, unambiguously reveal a π Berry phase, suggesting the Dirac Fermion nature of the 2DEG at the heterostructure interface, and the PbTe/CdTe heterostructure being a new candidate for 2D topological crystalline insulators.« less

  16. Dynamic conductivity of the bulk states of n-type HgTe/CdTe quantum well topological insulator

    SciTech Connect

    Chen, Qinjun; Sanderson, Matthew; Cao, J. C.; Zhang, Chao

    2014-11-17

    We theoretically studied the frequency-dependent current response of the bulk state of topological insulator HgTe/CdTe quantum well. The optical conductivity is mainly due to the inter-band process at high frequencies. At low frequencies, intra-band process dominates with a dramatic drop to near zero before the inter-band contribution takes over. The conductivity decreases with temperature at low temperature and increases with temperature at high temperature. The transport scattering rate has an opposite frequency dependence in the low and high temperature regime. The different frequency dependence is due to the interplay of the carrier-impurity scattering and carrier population near the Fermi surface.

  17. Design of epitaxial CdTe solar cells on InSb substrates

    DOE PAGES [OSTI]

    Song, Tao; Kanevce, Ana; Sites, James R.

    2015-11-01

    Epitaxial CdTe has been shown by others to have a radiative recombination rate approaching unity, high carrier concentration, and low defect density. It has, therefore, become an attractive candidate for high-efficiency solar cells, perhaps becoming competitive with GaAs. The choice of substrate is a key design feature for epitaxial CdTe solar cells, and several possibilities (CdTe, Si, GaAs, and InSb) have been investigated by others. All have challenges, and these have generally been addressed through the addition of intermediate layers between the substrate and CdTe absorber. InSb is an attractive substrate choice for CdTe devices, because it has a closemore » lattice match with CdTe, it has low resistivity, and it is easy to contact. However, the valence-band alignment between InSb and p-type CdTe, which can both impede hole current and enhance forward electron current, is not favorable. Three strategies to address the band-offset problem are investigated by numerical simulation: heavy doping of the back part of the CdTe layer, incorporation of an intermediate CdMgTe or CdZnTe layer, and the formation of an InSb tunnel junction. Lastly, wach of these strategies is predicted to be helpful for higher cell performance, but a combination of the first two should be most effective.« less

  18. Design of epitaxial CdTe solar cells on InSb substrates

    SciTech Connect

    Song, Tao; Kanevce, Ana; Sites, James R.

    2015-11-01

    Epitaxial CdTe has been shown by others to have a radiative recombination rate approaching unity, high carrier concentration, and low defect density. It has, therefore, become an attractive candidate for high-efficiency solar cells, perhaps becoming competitive with GaAs. The choice of substrate is a key design feature for epitaxial CdTe solar cells, and several possibilities (CdTe, Si, GaAs, and InSb) have been investigated by others. All have challenges, and these have generally been addressed through the addition of intermediate layers between the substrate and CdTe absorber. InSb is an attractive substrate choice for CdTe devices, because it has a close lattice match with CdTe, it has low resistivity, and it is easy to contact. However, the valence-band alignment between InSb and p-type CdTe, which can both impede hole current and enhance forward electron current, is not favorable. Three strategies to address the band-offset problem are investigated by numerical simulation: heavy doping of the back part of the CdTe layer, incorporation of an intermediate CdMgTe or CdZnTe layer, and the formation of an InSb tunnel junction. Lastly, wach of these strategies is predicted to be helpful for higher cell performance, but a combination of the first two should be most effective.

  19. Post-Growth Annealing of Bridgman-grown CdZnTe and CdMnTe Crystals for Room-temperature Nuclear Radiation Detectors

    DOE PAGES [OSTI]

    Egarievwe, Stephen U.; Yang, Ge; Egarievwe, Alexander; Okwechime, Ifechukwude O.; Gray, Justin; Hales, Zaveon M.; Hossain, Anwar; Camarda, Guiseppe S.; Bolotnikov, Aleksey E.; James, Ralph B.

    2015-02-11

    Bridgman-grown cadmium zinc telluride (CdZnTe or CZT) and cadmium manganese telluride (CdMnTe or CMT) crystals often have Te inclusions that limit their performances as X-ray- and gamma-ray-detectors. We present here the results of post-growth thermal annealing aimed at reducing and eliminating Te inclusions in them. In a 2D analysis, we observed that the sizes of the Te inclusions declined to 92% during a 60-h annealing of CZT at 510 °C under Cd vapor. Further, tellurium inclusions were eliminated completely in CMT samples annealed at 570 °C in Cd vapor for 26 h, whilst their electrical resistivity fell by an ordermore » of 102. During the temperature-gradient annealing of CMT at 730 °C and an 18 °C/cm temperature gradient for 18 h in a vacuum of 10-5 mbar, we observed the diffusion of Te from the sample, causing a reduction in size of the Te inclusions. For CZT samples annealed at 700 °C in a 10 °C/cm temperature gradient, we observed the migration of Te inclusions from a low-temperature region to a high one at 0.022 μm/s. During the temperature-gradient annealing of CZT in a vacuum of 10-5 mbar at 570 °C and 30 °C/cm for 18 h, some Te inclusions moved toward the high-temperature side of the wafer, while other inclusions of the same size, i.e., 10 µm in diameter, remained in the same position. These results show that the migration, diffusion, and reaction of Te with Cd in the matrix of CZT- and CMT-wafers are complex phenomena that depend on certain conditions.« less

  20. Ternary eutectic growth of nanostructured thermoelectric Ag-Pb-Te materials

    SciTech Connect

    Wu, Hsin-jay; Chen, Sinn-wen; Foo, Wei-jian; Jeffrey Snyder, G.

    2012-07-09

    Nanostructured Ag-Pb-Te thermoelectric materials were fabricated by unidirectionally solidifying the ternary Ag-Pb-Te eutectic and near-eutectic alloys using the Bridgeman method. Specially, the Bridgman-grown eutectic alloy exhibited a partially aligned lamellar microstructure, which consisted of Ag{sub 5}Te{sub 3} and Te phases, with additional 200-600 nm size particles of PbTe. The self-assembled interfaces altered the thermal and electronic transport properties in the bulk Ag-Pb-Te eutectic alloy. Presumably due to phonon scattering from the nanoscale microstructure, a low thermal conductivity ({kappa} = 0.3 W/mK) was achieved of the eutectic alloy, leading to a zT peak of 0.41 at 400 K.

  1. A W' boson near 2 TeV: Predictions for run 2 of the LHC

    SciTech Connect

    Dobrescu, Bogdan A.; Liu, Zhen

    2015-11-20

    We present a renormalizable theory that includes a W' boson of mass in the 1.8–2 TeV range, which may explain the excess events reported by the ATLAS Collaboration in a WZ final state, and by the CMS Collaboration in e+e jj, Wh0, and jj final states. The W' boson couples to right-handed quarks and leptons, including Dirac neutrinos with TeV-scale masses. This theory predicts a Z' boson of mass in the 3.4–4.5 TeV range. The cross section times branching fractions for the narrow Z' dijet and dilepton peaks at the 13 TeV LHC are 10 and 0.6 fb, respectively, for MZ'=3.4 TeV, and an order of magnitude smaller for MZ'=4.5 TeV.

  2. A W' boson near 2 TeV: Predictions for run 2 of the LHC

    DOE PAGES [OSTI]

    Dobrescu, Bogdan A.; Liu, Zhen

    2015-11-20

    We present a renormalizable theory that includes a W' boson of mass in the 1.8–2 TeV range, which may explain the excess events reported by the ATLAS Collaboration in a WZ final state, and by the CMS Collaboration in e+e– jj, Wh0, and jj final states. The W' boson couples to right-handed quarks and leptons, including Dirac neutrinos with TeV-scale masses. This theory predicts a Z' boson of mass in the 3.4–4.5 TeV range. The cross section times branching fractions for the narrow Z' dijet and dilepton peaks at the 13 TeV LHC are 10 and 0.6 fb, respectively, formore » MZ'=3.4 TeV, and an order of magnitude smaller for MZ'=4.5 TeV.« less

  3. Charge transfer and mobility enhancement at CdO/SnTe heterointerfaces

    SciTech Connect

    Nishitani, Junichi; Yu, Kin Man; Walukiewicz, Wladek

    2014-09-29

    We report a study of the effects of charge transfer on electrical properties of CdO/SnTe heterostructures. A series of structures with variable SnTe thicknesses were deposited by RF magnetron sputtering. Because of an extreme type III band offset with the valence band edge of SnTe located at 1.5?eV above the conduction band edge of CdO, a large charge transfer is expected at the interface of the CdO/SnTe heterostructure. The electrical properties of the heterostructures are analyzed using a multilayer charge transport model. The analysis indicates a large 4-fold enhancement of the CdO electron mobility at the interface with SnTe. The mobility enhancement is attributed to reduction of the charge center scattering through neutralization of the donor-like defects responsible for the Fermi level pinning at the CdO/SnTe interface.

  4. The Effect of Structural Vacancies on the Thermoelectric Properties of (Cu2Te)1-x(Ga2Te3)x

    SciTech Connect

    Ye, Zuxin; Cho, Jung Y; Tessema, Misle; Salvador, James R.; Waldo, Richard; Wang, Hsin; Cai, Wei

    2013-01-01

    We have studied the effects of structural vacancies on the thermoelectric properties of the ternary compounds (Cu2Te)1-x(Ga2Te3)x (x = 0.5, 0.55, 0.571, 0.6, 0.625, 0.667 and 0.75), which are solid solutions found in the pseudo-binary phase diagram for Cu2Te and Ga2Te3. This system possesses tunable structural vacancy concentrations. The x= 0.5 phase, CuGaTe2, is nominally devoid of structural vacancies, while the rest of the compounds contain varying amounts of these features, and the volume density of vacancies increases with Ga2Te3 content. The sample with x = 0.5, 0.55, 0.571, 0.6, 0.625 crystallize in the chalcopyrite structure while the x = 0.667 and 0.75 adopt the Ga2Te3 defect zinc blende structure. Strong scattering of heat carrying phonons by structural defects, leads to the reduction of thermal conductivity, which is beneficial to the thermoelectric performance of materials. On the other hand, these defects also scatter charge carriers and reduce the electrical conductivity. All the samples investigated are p-type semiconductors as inferred by the signs of their respective Hall (RH) and Seebeck (S) coefficients. The structural vacancies were found to scatter phonons strongly, while a combination of increased carrier concentration, and vacancies decreases the Hall mobility ( H), degrading the overall thermoelectric performance. The room temperature H drops from 90 cm2/V s for CuGaTe2 to 13 cm2/V s in Cu9Ga11Te21 and 4.6 cm2/V s in CuGa3Te5. The low temperature thermal conductivity decreases significantly with higher Ga2Te3 concentrations (higher vacancy concentration) due to increased point defect scattering which dominate thermal resistance terms. At high temperatures, the dependence of thermal conductivity on the Ga2Te3 content is less significant. The presence of strong Umklapp scattering leads to low thermal conductivity at high temperatures for all samples investigated. The highest ZT among the samples in this study was found for the defect-free CuGaTe

  5. Choice of Substrate Material for Epitaxial CdTe Solar Cells

    SciTech Connect

    Song, Tao; Kanevce, Ana; Sites, James R.

    2015-06-14

    Epitaxial CdTe with high quality, low defect density, and high carrier concentration should in principle yield high-efficiency photovoltaic devices. However, insufficient effort has been given to explore the choice of substrate for high-efficiency epitaxial CdTe solar cells. In this paper, we use numerical simulations to investigate three crystalline substrates: silicon (Si), InSb, and CdTe each substrate material are generally discussed.

  6. High Efficiency Single Crystal CdTe Solar Cells: November 19, 2009 - January 31, 2011

    SciTech Connect

    Carmody, M.; Gilmore, A.

    2011-05-01

    The goal of the program was to develop single crystal CdTe-based top cells grown on Si solar cells as a platform for the subsequent manufacture of high efficiency tandem cells for CPV applications. The keys to both the single junction and the tandem junction cell architectures are the ability to grow high quality single-crystal CdTe and CdZnTe layers on p-type Si substrates, to dope the CdTe and CdZnTe controllably, both n and p-type, and to make low resistance ohmic front and back contacts. EPIR demonstrated the consistent MBE growth of CdTe/Si and CdZnTe/Si having high crystalline quality despite very large lattice mismatches; epitaxial CdTe/Si and CdZnTe/Si consistently showed state-of-the-art electron mobilities and good hole mobilities; bulk minority carrier recombination lifetimes of unintentionally p-doped CdTe and CdZnTe grown by MBE on Si were demonstrated to be consistently of order 100 ns or longer; desired n- and p-doping levels were achieved; solar cell series specific resistances <10 ?-cm2 were achieved; A single-junction solar cell having a state-of-the-art value of Voc and a unverified 16.4% efficiency was fabricated from CdZnTe having a 1.80 eV bandgap, ideal for the top junction in a tandem cell with a Si bottom junction.

  7. Crystal chemistry peculiarities of Cs{sub 2}Te{sub 4}O{sub 12}

    SciTech Connect

    Hamani, David; Mirgorodsky, Andrei; Masson, Olivier; Merle-Mejean, Therese; Colas, Maggy; Smirnov, Mikhael; Thomas, Philippe

    2011-03-15

    The Raman and IR-absorption spectra of the Cs{sub 2}Te{sub 4}O{sub 12} lattice are first recorded and interpreted. Extraordinary features observed in the structure and Raman spectra of Cs{sub 2}Te{sub 4}O{sub 12} are analyzed by using ab initio and lattice-dynamical model calculations. This compound is specified as a caesium-tellurium tellurate Cs{sub 2}Te{sup IV}(Te{sup VI}O{sub 4}){sub 3} in which Te{sup IV} atoms transfer their 5p electrons to [Te{sup VI}O{sub 4}]{sub 3}{sup 6-} tellurate anions, thus fulfilling (jointly with Cs atoms) the role of cations. The Te{sup VI}-O-Te{sup VI} bridge vibration Raman intensity is found abnormally weak, which is reproduced by model treatment including the Cs{sup +} ion polarizability properties in consideration. -- Graphical abstract: Two versions of the BPM estimations of the Raman intensity for the Cs{sub 2}Te{sub 4}O{sub 12} lattice vibrations: (a) without including effects of the Cs-O bonds and (b) including the above mentioned effects. Experimentally observed peaks are characterized by their frequency positions. Display Omitted Research highlights: > Extraordinary features observed in the structure and Raman spectra of Cs{sub 2}Te{sub 4}O{sub 12}. > Ab initio and lattice-dynamical model calculations. > Abnormally weak Raman intensities of the symmetric Te{sup VI}-O-Te{sup VI} bridge. > The monovalent Cs{sup +} cations profoundly influence the polarizability properties.

  8. Preparation and properties of evaporated CdTe films compared with single crystal CdTe. Progress report No. 2, February 1-April 30, 1981

    SciTech Connect

    Bube, R H

    1981-01-01

    The design, construction and testing of the hot-wall vacuum evaporation system is proceeding on schedule. The vacuum system, a Varian 3118 diffusion pump system, has been installed and tested. A calculation of the optimum possible efficiency for an n-p CdTe homojunction indicates a value of 14%. A complete background is given on the growth of over fifty CdTe single crystals at Stanford, the last four of which were grown as part of this program. Use of crystal regrowth and vibration during growth both increase crystal quality. Higher electrical activity of phosphorus acceptors in CdTe is achieved when 0.1% excess Te is used in place of 0.5% excess Te. Careful characterization of boules grown for this program are underway, using Hall effect or capacitance-voltage data on selected samples. Initial investigation of the properties of grain boundaries in p-type CdTe : P crystals indicates a grain boundary height of 0.44 eV unaffected by illumination. These results suggest that grain boundaries are more strongly pinned in p-type than in n-type CdTe.

  9. Analysis of Surface Chemistry and Detector Performance of Chemically Process CdZnTe crystals

    SciTech Connect

    HOSSAIN A.; Yang, G.; Sutton, J.; Zergaw, T.; Babalola, O. S.; Bolotnikov, A. E.; Camarda. ZG. S.; Gul, R.; Roy, U. N., and James, R. B.

    2015-10-05

    The goal is to produce non-conductive smooth surfaces for fabricating low-noise and high-efficiency CdZnTe devices.

  10. PROJECT PROFILE: Interface Science and Engineering for Reliable, High Efficiency CdTe

    Energy.gov [DOE]

    While crystalline silicon accounted for two thirds of the PV market in 2014, cadmium telluride (CdTe) photovoltaic (PV) modules are becoming increasingly competitive with continued improvements in efficiency and reduction in price. This project will contribute to enabling 24% efficient CdTe cells by improving surface and interface recombination in the devices. Surface and interface recombination, which is the loss of photo-generated carriers before they are collected, becomes more detrimental to CdTe device performance as carrier lifetime increases. This project will develop effective surface passivation for CdTe and carrier selective contacts for higher efficiency, improved reproducibility, and increased stability.

  11. Nanoscale imaging of photocurrent and efficiency in CdTe solar...

    Office of Scientific and Technical Information (OSTI)

    cells The local collection characteristics of grain interiors and grain boundaries in thin film CdTe polycrystalline solar cells are investigated using scanning photocurrent...

  12. Probing TeV physics in the structure of the neutron (Technical...

    Office of Scientific and Technical Information (OSTI)

    Technical Report: Probing TeV physics in the structure of the neutron Citation Details ... Sponsoring Org: LDRD; USDOE Country of Publication: United States Language: English ...

  13. ON THE ENERGY SPECTRA OF GeV/TeV COSMIC RAY LEPTONS (Journal...

    Office of Scientific and Technical Information (OSTI)

    The models rely on either dark matter annihilationdecay or specific nearby astrophysical ... is the Klein-Nishina suppression of the electron cooling rate around TeV energies. ...

  14. On the Energy Spectra of GeV/TeV Cosmic Ray Leptons (Journal...

    Office of Scientific and Technical Information (OSTI)

    The models rely on either dark matter annihilationdecay or specific nearby astrophysical ... is the Klein-Nishina suppression of the electron cooling rate around TeV energies. ...

  15. Characterization and Analysis of CIGS and CdTE Solar Cells: December 2004 - July 2008

    SciTech Connect

    Sites, J. R.

    2009-01-01

    The work reported here embodies a device-physics approach based on careful measurement and interpretation of data from CIGS and CdTe solar cells.

  16. Scandium resonant impurity level in PbTe

    SciTech Connect

    Skipetrov, E. P. Skipetrova, L. A.; Knotko, A. V.; Slynko, E. I.; Slynko, V. E.

    2014-04-07

    We synthesize a scandium-doped PbTe single-crystal ingot and investigate the phase and the elemental composition as well as galvanomagnetic properties of Pb{sub 1-y}Sc{sub y}Te alloys in weak magnetic fields (4.2?K???T???300?K, B???0.07?T) upon varying the scandium content (y???0.02). We find that all investigated samples are single-phase and n-type. The distribution of scandium impurities along the axis of the ingot is estimated to be exponential. An increase of scandium impurity content leads to a monotonous growth of the free electron concentration by four orders of magnitude (approximately from 10{sup 16}?cm{sup ?3} to 10{sup 20}?cm{sup ?3}). In heavily doped alloys (y?>?0.01), the free electron concentration at the liquid-helium temperature tends to saturation, indicating the pinning of the Fermi energy by the scandium resonant impurity level located on the background of the conduction band. Using the two-band Kane and six-band Dimmock dispersion relations for IV-VI semiconductors, dependences of the Fermi energy measured from the bottom of the conduction band E{sub c} on the scandium impurity content are calculated and the energy of the resonant scandium level is estimated to be E{sub Sc}???E{sub c}?+?280?meV. Diagrams of electronic structure rearrangement of Pb{sub 1-y}Sc{sub y}Te alloys upon doping are proposed.

  17. Radiative leptogenesis at the TeV scale

    SciTech Connect

    Choudhury, Debajyoti; Mahajan, Namit; Patra, Sudhanwa; Sarkar, Utpal E-mail: nmahajan@prl.res.in E-mail: utpal@prl.res.in

    2012-04-01

    We construct an explicit model implementing leptogenesis proceeding via the radiative decay of heavy right handed neutrino. In a simple extension of the Standard Model, a discrete symmetry forbids the usual decays of the right-handed neutrinos, while allowing for an effective coupling between the left-handed and right-handed neutrinos through the dipole moment operator. This generates correct leptogenesis with resonant enhancement and also the required neutrino mass via a TeV scale seesaw mechanism. The model is consistent with low energy phenomenology and would have distinct signals in the next generation colliders, and, perhaps even the LHC.

  18. High-Efficiency, Commercial Ready CdTe Solar Cells

    SciTech Connect

    Sites, James R.

    2015-11-19

    Colorado State’s F-PACE project explored several ways to increase the efficiency of CdTe solar cells and to better understand the device physics of those cells under study. Increases in voltage, current, and fill factor resulted in efficiencies above 17%. The three project tasks and additional studies are described in detail in the final report. Most cells studied were fabricated at Colorado State using an industry-compatible single-vacuum closed-space-sublimation (CSS) chamber for deposition of the key semiconductor layers. Additionally, some cells were supplied by First Solar for comparison purposes, and a small number of modules were supplied by Abound Solar.

  19. Mr. John E. Kieling, Chief Hazardous Was te Bureau

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    John E. Kieling, Chief Hazardous Was te Bureau Depa rtment of Energy Carlsbad Field Office P. O. Box 3090 Carlsbad , New Mexico 88221 NOV 0 5 2013 New Mexico Environment Department 2905 Rodeo Park Drive East. Building 1 Santa Fe, New Mexico 87505-6303 Subject: Panel 6 Closure and Final Waste Emplacement Notifications Dear Mr. Kieling : The purpose of this leiter is 1 0 notify th e New Mexico Environment Department (NMEO) that the Permittees intend to commence closure of Hazardous Waste Disposa

  20. Effect of shells on photoluminescence of aqueous CdTe quantum dots

    SciTech Connect

    Yuan, Zhimin; Yang, Ping

    2013-07-15

    Graphical abstract: Size-tunable CdTe coated with several shells using an aqueous solution synthesis. CdTe/CdS/ZnS quantum dots exhibited high PL efficiency up to 80% which implies the promising applications for biomedical labeling. - Highlights: • CdTe quantum dots were fabricated using an aqueous synthesis. • CdS, ZnS, and CdS/ZnS shells were subsequently deposited on CdTe cores. • Outer ZnS shells provide an efficient confinement of electron and hole inside the QDs. • Inside CdS shells can reduce the strain on the QDs. • Aqueous CdTe/CdS/ZnS QDs exhibited high stability and photoluminescence efficiency of 80%. - Abstract: CdTe cores with various sizes were fabricated in aqueous solutions. Inorganic shells including CdS, ZnS, and CdS/ZnS were subsequently deposited on the cores through a similar aqueous procedure to investigate the effect of shells on the photoluminescence properties of the cores. In the case of CdTe/CdS/ZnS quantum dots, the outer ZnS shell provides an efficient confinement of electron and hole wavefunctions inside the quantum dots, while the middle CdS shell sandwiched between the CdTe core and ZnS shell can be introduced to obviously reduce the strain on the quantum dots because the lattice parameters of CdS is situated at the intermediate-level between those of CdTe and ZnS. In comparison with CdTe/ZnS core–shell quantum dots, the as-prepared water-soluble CdTe/CdS/ZnS quantum dots in our case can exhibit high photochemical stability and photoluminescence efficiency up to 80% in an aqueous solution, which implies the promising applications in the field of biomedical labeling.

  1. Extending Higgs inflation with TeV scale new physics

    SciTech Connect

    He, Hong-Jian; Xianyu, Zhong-Zhi E-mail: xianyuzhongzhi@gmail.com

    2014-10-01

    Higgs inflation is among the most economical and predictive inflation models, although the original Higgs inflation requires tuning the Higgs or top mass away from its current experimental value by more than 2? deviations, and generally gives a negligible tensor-to-scalar ratio r?10{sup -3} (if away from the vicinity of critical point). In this work, we construct a minimal extension of Higgs inflation, by adding only two new weak-singlet particles at TeV scale, a vector-quark T and a real scalar S. The presence of singlets (T,S) significantly impact the renormalization group running of the Higgs boson self-coupling. With this, our model provides a wider range of the tensor-to-scalar ratio r=O(0.1)-O(10{sup -3}), consistent with the favored r values by either BICEP2 or Planck data, while keeping the successful prediction of the spectral index n{sub s}?0.96. It allows the Higgs and top masses to fully fit the collider measurements. We also discuss implications for searching the predicted TeV-scale vector-quark T and scalar S at the LHC and future high energy pp colliders.

  2. Purification of CdZnTe by Electromigration

    DOE PAGES [OSTI]

    Kim, K.; Kim, Sangsu; Hong, Jinki; Lee, Jinseo; Hong, Taekwon; Bolotnikov, A. E.; Camarda, G. S.; James, R. B.

    2015-04-14

    Electro-migration of ionized/electrically active impurities in CdZnTe (CZT) was successfully demonstrated at elevated temperature with an electric field of 20 V/mm. Copper, which exists in positively charged states, electro-migrated at a speed of 15 lm/h in an electric field of 20 V/mm. A notable variation in impurity concentration along the growth direction with the segregation tendency of the impurities was observed in an electro-migrated CZT boule. Notably, both Ga and Fe, which exist in positively charged states, exhibited the opposite distribution to that of their segregation tendency in Cd(Zn)Te. Furthermore, a CZT detector fabricated from the middle portion of themore » electromigrated CZT boule showed an improved mobility-lifetime product of 0.91 10-2 cm2 /V, compared to that of 1.4 10-3 cm2 /V, observed in an as-grown (non-electro-migrated) CZT detector. The optimum radiation detector material would have minimum concentration of deep traps required for compensation.« less

  3. Advanced CdTe Photovoltaic Technology: September 2007 - March 2009

    SciTech Connect

    Barth, K.

    2011-05-01

    During the last eighteen months, Abound Solar (formerly AVA Solar) has enjoyed significant success under the SAI program. During this time, a fully automated manufacturing line has been developed, fabricated and commissioned in Longmont, Colorado. The facility is fully integrated, converting glass and semiconductor materials into complete modules beneath its roof. At capacity, a glass panel will enter the factory every 10 seconds and emerge as a completed module two hours later. This facility is currently undergoing trials in preparation for large volume production of 120 x 60 cm thin film CdTe modules. Preceding the development of the large volume manufacturing capability, Abound Solar demonstrated long duration processing with excellent materials utilization for the manufacture of high efficiency 42 cm square modules. Abound Solar prototype modules have been measured with over 9% aperture area efficiency by NREL. Abound Solar demonstrated the ability to produce modules at industry leading low costs to NREL representatives. Costing models show manufacturing costs below $1/Watt and capital equipment costs below $1.50 per watt of annual manufacturing capacity. Under this SAI program, Abound Solar supported a significant research and development program at Colorado State University. The CSU team continues to make progress on device and materials analysis. Modeling for increased device performance and the effects of processing conditions on properties of CdTe PV were investigated.

  4. Extending Higgs inflation with TeV scale new physics

    SciTech Connect

    He, Hong-Jian; Xianyu, Zhong-Zhi

    2014-10-10

    Higgs inflation is among the most economical and predictive inflation models, although the original Higgs inflation requires tuning the Higgs or top mass away from its current experimental value by more than 2σ deviations, and generally gives a negligible tensor-to-scalar ratio r∼10{sup −3} (if away from the vicinity of critical point). In this work, we construct a minimal extension of Higgs inflation, by adding only two new weak-singlet particles at TeV scale, a vector-quark T and a real scalar S . The presence of singlets (T, S) significantly impact the renormalization group running of the Higgs boson self-coupling. With this, our model provides a wider range of the tensor-to-scalar ratio r=O(0.1)−O(10{sup −3}) , consistent with the favored r values by either BICEP2 or Planck data, while keeping the successful prediction of the spectral index n{sub s}≃0.96 . It allows the Higgs and top masses to fully fit the collider measurements. We also discuss implications for searching the predicted TeV-scale vector-quark T and scalar S at the LHC and future high energy pp colliders.

  5. Thermodynamic properties of model CdTe/CdSe mixtures

    DOE PAGES [OSTI]

    van Swol, Frank; Zhou, Xiaowang W.; Challa, Sivakumar R.; Martin, James E.

    2015-02-20

    We report on the thermodynamic properties of binary compound mixtures of model groups II–VI semiconductors. We use the recently introduced Stillinger–Weber Hamiltonian to model binary mixtures of CdTe and CdSe. We use molecular dynamics simulations to calculate the volume and enthalpy of mixing as a function of mole fraction. The lattice parameter of the mixture closely follows Vegard's law: a linear relation. This implies that the excess volume is a cubic function of mole fraction. A connection is made with hard sphere models of mixed fcc and zincblende structures. We found that the potential energy exhibits a positive deviation frommore » ideal soluton behaviour; the excess enthalpy is nearly independent of temperatures studied (300 and 533 K) and is well described by a simple cubic function of the mole fraction. Using a regular solution approach (combining non-ideal behaviour for the enthalpy with ideal solution behaviour for the entropy of mixing), we arrive at the Gibbs free energy of the mixture. The Gibbs free energy results indicate that the CdTe and CdSe mixtures exhibit phase separation. The upper consolute temperature is found to be 335 K. Finally, we provide the surface energy as a function of composition. Moreover, it roughly follows ideal solution theory, but with a negative deviation (negative excess surface energy). This indicates that alloying increases the stability, even for nano-particles.« less

  6. Purification of CdZnTe by Electromigration

    SciTech Connect

    Kim, K.; Kim, Sangsu; Hong, Jinki; Lee, Jinseo; Hong, Taekwon; Bolotnikov, A. E.; Camarda, G. S.; James, R. B.

    2015-04-14

    Electro-migration of ionized/electrically active impurities in CdZnTe (CZT) was successfully demonstrated at elevated temperature with an electric field of 20 V/mm. Copper, which exists in positively charged states, electro-migrated at a speed of 15 lm/h in an electric field of 20 V/mm. A notable variation in impurity concentration along the growth direction with the segregation tendency of the impurities was observed in an electro-migrated CZT boule. Notably, both Ga and Fe, which exist in positively charged states, exhibited the opposite distribution to that of their segregation tendency in Cd(Zn)Te. Furthermore, a CZT detector fabricated from the middle portion of the electromigrated CZT boule showed an improved mobility-lifetime product of 0.91 10-2 cm2 /V, compared to that of 1.4 10-3 cm2 /V, observed in an as-grown (non-electro-migrated) CZT detector. The optimum radiation detector material would have minimum concentration of deep traps required for compensation.

  7. Purification of CdZnTe by electromigration

    SciTech Connect

    Kim, K.; Kim, Sangsu; Hong, Jinki; Lee, Jinseo; Hong, Taekwon; Bolotnikov, A. E.; Camarda, G. S.; James, R. B.

    2015-04-14

    Electro-migration of ionized/electrically active impurities in CdZnTe (CZT) was successfully demonstrated at elevated temperature with an electric field of 20 V/mm. Copper, which exists in positively charged states, electro-migrated at a speed of 15 μm/h in an electric field of 20 V/mm. A notable variation in impurity concentration along the growth direction with the segregation tendency of the impurities was observed in an electro-migrated CZT boule. Notably, both Ga and Fe, which exist in positively charged states, exhibited the opposite distribution to that of their segregation tendency in Cd(Zn)Te. A CZT detector fabricated from the middle portion of the electro-migrated CZT boule showed an improved mobility-lifetime product of 0.91 × 10{sup −2} cm{sup 2}/V, compared with that of 1.4 × 10{sup −3} cm{sup 2}/V, observed in an as-grown (non-electro-migrated) CZT detector. The optimum radiation detector material would have minimum concentration of deep traps required for compensation.

  8. Photoconductivity of CdTe Nanocrystal-Based Thin Films. Te2- Ligands Lead To Charge Carrier Diffusion Lengths Over 2 Micrometers

    SciTech Connect

    Crisp, Ryan W.; Callahan, Rebecca; Reid, Obadiah G.; Dolzhnikov, Dmitriy S.; Talapin, Dmitri V.; Rumbles, Garry; Luther, Joseph M.; Kopidakis, Nikos

    2015-11-16

    We report on photoconductivity of films of CdTe nanocrystals (NCs) using time-resolved microwave photoconductivity (TRMC). Spherical and tetrapodal CdTe NCs with tunable size-dependent properties are studied as a function of surface ligand (including inorganic molecular chalcogenide species) and annealing temperature. Relatively high carrier mobility is measured for films of sintered tetrapod NCs (4 cm2/(V s)). Our TRMC findings show that Te2- capped CdTe NCs show a marked improvement in carrier mobility (11 cm2/(V s)), indicating that NC surface termination can be altered to play a crucial role in charge-carrier mobility even after the NC solids are sintered into bulk films.

  9. Transport properties of the SnBi{sub 2}Te{sub 4}–PbBi{sub 2}Te{sub 4} solid solution

    SciTech Connect

    Pan, Lin; Li, Jing; Berardan, David Dragoe, Nita

    2015-05-15

    We report on the electrical and thermal transport properties of the Sn{sub 1−x}Pb{sub x}Bi{sub 2}Te{sub 4} series and we discuss the potential of these materials for thermoelectric conversion applications. From the evolution of the XRD patterns, we can confidently conclude that a complete solid solution exists between SnBi{sub 2}Te{sub 4} and PbBi{sub 2}Te{sub 4}, with no miscibility gap. A crossover from p-type conduction in Sn-rich samples to n-type conduction in Pb-rich ones has been observed, with a transition between x=0.3 and 0.4. A concomitant increase of the electrical resistivity and of the Seebeck coefficient has been observed in the solid solution, which leads to almost constant values of the thermoelectric power factor. Moreover, the thermal conductivity is slightly reduced in the solid solution. The best figure of merit ZT values at room temperature have been observed for p-type Sn{sub 0.8}Pb{sub 0.2}Bi{sub 2}Te{sub 4} with ZT=0.25 and for n-type Sn{sub 0.3}Pb{sub 0.7}Bi{sub 2}Te{sub 4} with ZT=0.15. - Graphical abstract: Seebeck coefficient in (Pb/Sn)Bi{sub 2}Te{sub 4} solid solution. - Highlights: • A complete solid solution exists between PbBi{sub 2}Te{sub 4} and SnBi{sub 2}Te{sub 4.} • A crossover between p-type and n-type is observed for 0.3

  10. Thermoelectric properties of Sn- and Pb-doped Tl{sub 9}BiTe{sub 6} and Tl{sub 9}SbTe{sub 6}

    SciTech Connect

    Guo, Quansheng; Chan, Meghan; Kuropatwa, Bryan A.; Kleinke, Holger

    2014-11-14

    A variety of substitutions in Tl{sub 9}BiTe{sub 6} and Tl{sub 9}SbTe{sub 6} with Sn and Pb, amounting to 14 different samples, were performed by melting the stoichiometric amounts of elements at 923 K, followed by slow cooling. The pulverized powders were sintered using the hot-pressing technique. All samples were of single phase according to the powder X-ray diffraction patterns. Thermoelectric property measurements were performed to investigate the effects of Sn- and Pb-doping on the electrical conductivity, Seebeck coefficient, and thermal conductivity. Increasing the concentration of the dopants caused increases in electrical and thermal conductivity, while decreasing the Seebeck coefficient. Tl{sub 9}Bi{sub 0.90}Pb{sub 0.10}Te{sub 6} and Tl{sub 9}Bi{sub 0.85}Pb{sub 0.15}Te{sub 6} exhibited the highest power factor. The changes in lattice thermal conductivity were minor and did not follow a clear trend. Competitive ZT values were obtained for Tl{sub 9}Bi{sub 0.95}Sn{sub 0.05}Te{sub 6}, Tl{sub 9}Bi{sub 0.95}Pb{sub 0.05}Te{sub 6}, Tl{sub 9}Sb{sub 0.97}Sn{sub 0.03}Te{sub 6}, and Tl{sub 9}Sb{sub 0.95}Pb{sub 0.05}Te{sub 6}, namely 0.95, 0.94, 0.83, and 0.71 around 500 K, respectively. Higher dopant concentrations led to lower ZT values.

  11. ZnTeO{sub 3} crystal growth by a modified Bridgman technique

    SciTech Connect

    Nawash, Jalal M. Lynn, Kelvin G.

    2014-12-15

    Highlights: • ZnTeO{sub 3} single crystals were grown for the first time by a modified Bridgman method. • The growth is still possible in a system that lacks congruent melting. • A growth is best when melt is exposed to a steeper axial thermal gradient. • Optical and electrical properties were investigated for the grown crystals. - Abstract: Zinc Tellurite (ZnTeO{sub 3}) crystals were grown for the first time using a modified Bridgman method with a 2.5 kHz radio frequency (RF) furnace. Single crystal growth of ZnTeO{sub 3} was hindered by many complicating factors, such as the evaporation of TeO{sub 2} above 700 °C and the formation of more than one phase during crystal growth. While there were several successful runs that produced ZnTeO{sub 3} single crystals, it was found that large (≥10 cm{sup 3}) single ZnTeO{sub 3} crystals resulted when the crucible was exposed to a steeper vertical thermal gradient and when the temperature of the melt was raised to at least 860 °C. The results of powder X-ray diffraction (XRD) patterns were in accordance with the X-ray powder diffraction file (PDF) for ZnTeO{sub 3}. Some optical, electrical and structural properties of ZnTeO{sub 3} single crystals were reported in this paper.

  12. Fabrication and Physics of CdTe Devices by Sputtering: Final Report, 1 March 2005 - 30 November 2008

    SciTech Connect

    Compaan, A.; Collins, R.; Karpov, V.; Giolando, D.

    2009-04-01

    Work to understand CdS/CdTe solar cell device physics; increase magnetron sputtering rate (while keeping high device quality); reduce thickness of CdTe layers (while keeping voltage and fill factor).

  13. Improving Energy Efficiency by Developing Components for Distributed Cooling and Heating Based on Thermal Comfort Modeling[Thermoelectric (TE) HVAC

    Energy.gov [DOE]

    Discusses results from TE HVAC project to add detail to a human thermal comfort model and further allow load reduction in the climate control energy through a distributed TE network

  14. Growth of CdTe thin films on graphene by close-spaced sublimation method

    SciTech Connect

    Jung, Younghun; Yang, Gwangseok; Kim, Jihyun, E-mail: hyunhyun7@korea.ac.kr [Department of Chemical and Biological Engineering, Korea University, Seoul 136-701 (Korea, Republic of)] [Department of Chemical and Biological Engineering, Korea University, Seoul 136-701 (Korea, Republic of); Chun, Seungju; Kim, Donghwan [Department of Materials Science and Engineering, Korea University, Seoul 136-701 (Korea, Republic of)] [Department of Materials Science and Engineering, Korea University, Seoul 136-701 (Korea, Republic of)

    2013-12-02

    CdTe thin films grown on bi-layer graphene were demonstrated by using the close-spaced sublimation method, where CdTe was selectively grown on the graphene. The density of the CdTe domains was increased with increasing the number of the defective sites in the graphene, which was controlled by the duration of UV exposure. The CdTe growth rate on the bi-layer graphene electrodes was 400?nm/min with a bandgap energy of 1.451.49?eV. Scanning electron microscopy, micro-Raman spectroscopy, micro-photoluminescence, and X-ray diffraction technique were used to confirm the high quality of the CdTe thin films grown on the graphene electrodes.

  15. Ba{sub 2}TeO: A new layered oxytelluride

    SciTech Connect

    Besara, T.; Ramirez, D.; Sun, J.; Whalen, J.B.; Tokumoto, T.D.; McGill, S.A.; Singh, D.J.; Siegrist, T.

    2015-02-15

    Single crystals of the new semiconducting oxytelluride phase, Ba{sub 2}TeO, were synthesized from barium oxide powder and elemental tellurium in a molten barium metal flux. Ba{sub 2}TeO crystallizes in tetragonal symmetry with space group P4/nmm (#129), a=5.0337(1) Å, c=9.9437(4) Å, Z=2. The crystals were characterized by single crystal x-ray diffraction, heat capacity and optical measurements. The optical measurements along with electronic band structure calculations indicate semiconductor behavior with a band gap of 2.93 eV. Resistivity measurements show that Ba{sub 2}TeO is highly insulating. - Graphical abstract: Starting from a simple stacking of rocksalt layers, the final structure of Ba{sub 2}TeO can be obtained by accommodation of structural strain via atom displacements. Density of states calculations and optical absorbance measurements show that Ba{sub 2}TeO has a band gap of 2.93 eV, indicative of semiconductor behavior. - Highlights: • Single crystal synthesis of a new layered oxytelluride, Ba{sub 2}TeO. • The structure features inverse PbO-type BaO layers and NaCl-type BaTe layers. • Optical absorbance show Ba{sub 2}TeO to be a semiconductor with a 2.93 eV gap. • Density of states indicate a small hybridization between Te 5p and Ba 5d states. • The BaTe (BaO) layers dominate the heat capacity at low (high) temperatures.

  16. Anharmonic effects in the thermoelectric properties of PbTe

    SciTech Connect

    Al-Otaibi, Jawaher; Srivastava, G. P.

    2014-07-28

    In this work, we investigate the crystal anharmonic effects in the thermoelectric properties of n-type PbTe. The lattice thermal transport coefficient is computed by employing an isotropic continuum model for the dispersion relation for acoustic as well as optical phonon branches, an isotropic continuum model for crystal anharmonicity, and the single-mode relaxation time scheme. The electronic components of the transport coefficients in a wide temperature range are calculated using the isotropic-nearly-free-electron model, interaction of electrons with deformation potential of acoustic phonons, and the effect of the band non-parabolicity. It is found that the transverse optical branches play a major role in determining the phonon conductivity and the thermoelectric figure of merit of this material.

  17. Chapter 1.19: Cadmium Telluride Photovoltaic Thin Film: CdTe

    SciTech Connect

    Gessert, T. A.

    2012-01-01

    The chapter reviews the history, development, and present processes used to fabricate thin-film, CdTe-based photovoltaic (PV) devices. It is intended for readers who are generally familiar with the operation and material aspects of PV devices but desire a deeper understanding of the process sequences used in CdTe PV technology. The discussion identifies why certain processes may have commercial production advantages and how the various process steps can interact with each other to affect device performance and reliability. The chapter concludes with a discussion of considerations of large-area CdTe PV deployment including issues related to material availability and energy-payback time.

  18. NuTeV Anomaly Helps Shed Light on Physics of the Nucleus | Jefferson Lab

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    NuTeV Anomaly Helps Shed Light on Physics of the Nucleus NuTeV Anomaly Helps Shed Light on Physics of the Nucleus NEWPORT NEWS, VA, June 29, 2009 - A new calculation clarifies the complicated relationship between protons and neutrons in the atomic nucleus and offers a fascinating resolution of the famous NuTeV Anomaly. The calculation, published in the journal Physical Review Letters on June 26, was carried out by a collaboration of researchers from the Department of Energy's Thomas Jefferson

  19. Evidence for charge Kondo effect in superconducting Tl-doped PbTe (Journal

    Office of Scientific and Technical Information (OSTI)

    Article) | SciTech Connect Evidence for charge Kondo effect in superconducting Tl-doped PbTe Citation Details In-Document Search Title: Evidence for charge Kondo effect in superconducting Tl-doped PbTe We report results of low-temperature thermodynamic and transport measurements of Pb{sub 1-x}Tl{sub x}Te single crystals for Tl concentrations up to the solubility limit of approximately x = 1.5%. For all doped samples, we observe a low-temperature resistivity upturn that scales in magnitude

  20. Background limited mid-infrared photodetection with photovoltaic HgTe

    Office of Scientific and Technical Information (OSTI)

    colloidal quantum dots (Journal Article) | SciTech Connect Background limited mid-infrared photodetection with photovoltaic HgTe colloidal quantum dots Citation Details In-Document Search Title: Background limited mid-infrared photodetection with photovoltaic HgTe colloidal quantum dots The photovoltaic response of thin films of HgTe colloidal quantum dots in the 3-5 μm range is observed. With no applied bias, internal quantum efficiency exceeding 40%, specific detectivity above 10{sup 10}

  1. CdTe portfolio offers commercial ready high efficiency solar - Energy

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Innovation Portal Find More Like This Return to Search CdTe portfolio offers commercial ready high efficiency solar National Renewable Energy Laboratory Contact NREL About This Technology Publications: PDF Document Publication MktgSummary CdTe.pdf (117 KB) Schematic illustration of a typical CdTe superstrate thin-film PV device. In this design, the layers of the device are deposited onto a glass &quot;superstrate&quot; that allows sunlight to enter. The sunlight passes through the

  2. Intrinsic Rashba-like splitting in asymmetric Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} heterogeneous topological insulator films

    SciTech Connect

    Liu, Xiaofei; Guo, Wanlin

    2014-08-25

    We show by density functional theory calculations that asymmetric hetero-stacking of Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} films can modulate the topological surface states. Due to the structure inversion asymmetry, an intrinsic Rashba-like splitting of the conical surface bands is aroused. While such splitting in homogeneous Bi{sub 2}Te{sub 3}-class topological insulators can be realized in films with more than three quintuple layers under external electric fields, the hetero-stacking breaks the limit of thickness for preserving the topological nature into the thinnest two quintuple layers. These results indicate that the hetero-stacking can serve as an efficient strategy for spin-resolved band engineering of topological insulators.

  3. Magnetic anisotropy induced by crystal distortion in Ge{sub 1−x}Mn{sub x}Te/PbTe//KCl (001) ferromagnetic semiconductor layers

    SciTech Connect

    Knoff, W. Łusakowski, A.; Domagała, J. Z.; Minikayev, R.; Taliashvili, B.; Łusakowska, E.; Pieniążek, A.; Szczerbakow, A.; Story, T.

    2015-09-21

    Ferromagnetic resonance (FMR) study of magnetic anisotropy is presented for thin layers of IV-VI diluted magnetic semiconductor Ge{sub 1−x}Mn{sub x}Te with x = 0.14 grown by molecular beam epitaxy on KCl (001) substrate with a thin PbTe buffer. Analysis of the angular dependence of the FMR resonant field reveals that an easy magnetization axis is located near to the normal to the layer plane and is controlled by two crystal distortions present in these rhombohedral Ge{sub 1−x}Mn{sub x}Te layers: the ferroelectric distortion with the relative shift of cation and anion sub-lattices along the [111] crystal direction and the biaxial in-plane, compressive strain due to thermal mismatch.

  4. Effect of Back Contact and Rapid Thermal Processing Conditions on Flexible CdTe Device Performance

    SciTech Connect

    Mahabaduge, Hasitha; Meysing, D. M.; Rance, Will L.; Burst, James M.; Reese, Matthew O.; Wolden, C. A.; Gessert, Timothy A.; Metzger, Wyatt K.; Garner, S.; Barnes, Teresa M.

    2015-06-14

    Flexible CdTe solar cells on ultra-thin glass substrates can enable new applications that require high specific power, unique form-factors, and low manufacturing costs. To be successful, these cells must be cost competitive, have high efficiency, and have high reliability. Here we present back contact processing conditions that enabled us to achieve over 16% efficiency on flexible Corning (R) Willow (R) Glass substrates. We used co-evaporated ZnTe:Cu and Au as our back contact and used rapid thermal processing (RTP) to activate the back contact. Both the ZnTe to Cu ratio and the RTP activation temperature provide independent control over the device performance. We have investigated the influence of various RTP conditions to Cu activation and distribution. Current density-voltage, capacitance-voltage measurements along with device simulations were used to examine the device performance in terms of ZnTe to Cu ratio and rapid thermal activation temperature.

  5. Efficiency, Cost and Weight Trade-off in TE Power Generation System for Vehicle Exhaust Applications

    Energy.gov [DOE]

    It contains a detailed co-optimization of the thermoelectric module with the heat sink and a study of the tradeoff between the material cost and efficiency for the TE module and the heat sink. An optimum design is found.

  6. V-183: Cisco TelePresence TC and TE Bugs Let Remote Users Deny...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Remote Users Deny Service and Remote Adjacent Authenticated Users Gain Root Shell Access V-183: Cisco TelePresence TC and TE Bugs Let Remote Users Deny Service and Remote Adjacent...

  7. THE EI'IVIRONMENTAL QUALITY COMPANY CORPCl~V\\TE OFFICE

    Office of Environmental Management (EM)

    EI'IVIRONMENTAL QUALITY COMPANY CORPClVTE OFFICE Ill 36255 MICI*at:l;1 '1 J.VENIJE * WAYNE , IVICHICA148 '184 te800-5925489 tit fax 800-592-5329 February 20, 2013 Yia ...

  8. Structural analysis of Cr aggregation in ferromagnetic semiconductor (Zn,Cr)Te

    SciTech Connect

    Kobayashi, H.; Yamawaki, K.; Nishio, Y.; Kanazawa, K.; Kuroda, S.; Mitome, M.; Bando, Y.

    2013-12-04

    The Cr aggregation in a ferromagnetic semiconductor (Zn,Cr)Te was studied by performing precise analyses using TEM and XRD of microscopic structure of the Cr-aggregated regions formed in iodine-doped Zn{sub 1?x}Cr{sub x}Te films with a relatively high Cr composition x ? 0.2. It was found that the Cr-aggregated regions are composed of Cr{sub 1??}Te nanocrystals of the hexagonal structure and these hexagonal precipitates are stacked preferentially on the (111)A plane of the zinc-blende (ZB) structure of the host ZnTe crystal with its c-axis nearly parallel to the (111){sub ZB} plane.

  9. Atomic-force microscopy and photoluminescence of nanostructured CdTe

    SciTech Connect

    Babentsov, V.; Sizov, F.; Franc, J.; Luchenko, A.; Svezhentsova, E. Tsybrii, Z.

    2013-09-15

    Low-dimensional CdTe nanorods with a diameter of 10-30 nm and a high aspect ratio that reaches 100 are studied. The nanorods are grown by the physical vapor transport method with the use of Bi precipitates on the substrates. In addition, thin films of closely packed CdTe nanorods with the transverse dimensions {approx}(100-200) nm are grown. Atomic-force microscopy shows that the cross sections of all of the nanorods were hexagonally shaped. By photoluminescence measurements, the inference about the wurtzite structure of CdTe is supported, and the structural quality, electron-phonon coupling, and defects are analyzed. On the basis of recent ab initio calculations, the nature of defects responsible for the formation of deep levels in the CdTe layers and bulk crystals are analyzed.

  10. Ultrathin nanosheets of CrSiTe3. A semiconducting two-dimensional...

    Office of Scientific and Technical Information (OSTI)

    As a result, the ferromagnetic mono- and few-layer 2D CrSiTe3 indicated here should enable ... Type: Accepted Manuscript Journal Name: Journal of Materials Chemistry. C Additional ...

  11. Aqueous Synthesis of Zinc Blende CdTe/CdS Magic-Core/Thick-Shell...

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Aqueous Synthesis of Zinc Blende CdTeCdS Magic-CoreThick-Shell Tetrahedral Shaped Nanocrystals with Emission Tunable to Near-Infrared Authors: Deng, Z., Schulz, O., Lin, S.,...

  12. Resonant Level Enhancement of the Thermoelectric Power of Bi2Te3...

    Energy.gov [DOE] (indexed site)

    thermoelectric tin alloys for heat pumps. heremans.pdf (860.8 KB) More Documents & Publications The tin impurity in Bi0.5Sb1.5Te3 alloys Strategies for High Thermoelectric zT in ...

  13. Efficiency, Cost and Weight Trade-off in TE Power Generation...

    Energy.gov [DOE] (indexed site)

    It contains a detailed co-optimization of the thermoelectric module with the heat sink and a study of the tradeoff between the material cost and efficiency for the TE module and ...

  14. Elastic properties of sulphur and selenium doped ternary PbTe alloys by first principles

    SciTech Connect

    Bali, Ashoka Chetty, Raju Mallik, Ramesh Chandra

    2014-04-24

    Lead telluride (PbTe) is an established thermoelectric material which can be alloyed with sulphur and selenium to further enhance the thermoelectric properties. Here, a first principles study of ternary alloys PbS{sub x}Te{sub (1−x)} and PbSe{sub x}Te{sub (1−x)} (0≤x≤1) based on the Virtual Crystal Approximation (VCA) is presented for different ratios of the isoelectronic atoms in each series. Equilibrium lattice parameters and elastic constants have been calculated and compared with the reported data. Anisotropy parameter calculated from the stiffness constants showed a slight improvement in anisotropy of elastic properties of the alloys over undoped PbTe. Furthermore, the alloys satisfied the predicted stability criteria from the elastic constants, showing stable structures, which agreed with the previously reported experimental results.

  15. Defect induced structural and thermoelectric properties of Sb{sub 2}Te{sub 3} alloy

    SciTech Connect

    Das, Diptasikha; Malik, K.; Deb, A. K.; Dhara, Sandip; Bandyopadhyay, S.; Banerjee, Aritra

    2015-07-28

    Structural and thermoelectric properties of metallic and semiconducting Sb{sub 2}Te{sub 3} are reported. X-Ray diffraction and Raman spectroscopy studies reveal that semiconducting sample has higher defect density. Nature and origin of possible defects are highlighted. Semiconducting Sb{sub 2}Te{sub 3} hosts larger numbers of defects, which act as scattering center and give rise to the increased value of resistivity, thermopower, and power factor. Thermopower data indicate p-type nature of the synthesized samples. It is evidenced that the surface states are often mixed with the bulk state, giving rise to metallicity in Sb{sub 2}Te{sub 3}. Role of different scattering mechanism on the thermoelectric property of Sb{sub 2}Te{sub 3} is discussed.

  16. Giant and tunable valley degeneracy splitting in MoTe 2 (Journal...

    Office of Scientific and Technical Information (OSTI)

    This content will become publicly available on September 7, 2016 Title: Giant and tunable valley degeneracy splitting in MoTe 2 Authors: Qi, Jingshan ; Li, Xiao ; Niu, Qian ; Feng, ...

  17. Thermoelectric Enhancement in PbTe with K or Na codoping from...

    Office of Scientific and Technical Information (OSTI)

    Thermoelectric Enhancement in PbTe with K or Na codoping from tuning the interaction of the light- and heavy-hole valence bands Citation Details In-Document Search Title: ...

  18. A comparison of NNLO QCD predictions with 7 TeV ATLAS and CMS...

    Office of Scientific and Technical Information (OSTI)

    with 7 TeV ATLAS and CMS data for V+jet processes Authors: Boughezal, Radja ; Liu, Xiaohui ; Petriello, Frank Publication Date: 2016-09-01 OSTI Identifier: 1258296 Grant...

  19. Shape-controlled narrow-gap SnTe nanostructures: From nanocubes to nanorods and nanowires

    SciTech Connect

    Guo, Shaojun; Andrew F. Fidler; He, Kai; Su, Dong; Chen, Gen; Lin, Qianglu; Pietryga, Jeffrey M.; Klimov, Victor I.

    2015-11-06

    In this study, the rational design and synthesis of narrow-gap colloidal semiconductor nanocrystals (NCs) is an important step toward the next generation of solution-processable photovoltaics, photodetectors, and thermoelectric devices. SnTe NCs are particularly attractive as a Pb-free alternative to NCs of narrow-gap lead chalcogenides. Previous synthetic efforts on SnTe NCs have focused on spherical nanoparticles. Here we report new strategies for synthesis of SnTe NCs with shapes tunable from highly monodisperse nanocubes, to nanorods (NRs) with variable aspect ratios, and finally to long, straight nanowires (NWs). Reaction at high temperature quickly forms thermodynamically favored nanocubes, but low temperatures lead to elongated particles. Transmission electron microscopy studies of reaction products at various stages of the synthesis reveal that the growth and shape-focusing of monodisperse SnTe nanocubes likely involves interparticle ripening, while directional growth of NRs and NWs may be initiated by particle dimerization via oriented attachment.

  20. Local order origin of thermal stability enhancement in amorphous Ag doping GeTe

    SciTech Connect

    Xu, L.; Li, Y.; Yu, N. N.; Zhong, Y. P.; Miao, X. S.

    2015-01-19

    We demonstrate the impacts of Ag doping on the local atomic structure of amorphous GeTe phase-change material. The variations of phonon vibrational modes, boding nature, and atomic structure are shown by Raman, X-ray photoelectron spectroscopy, and ab initio calculation. Combining the experiments and simulations, we observe that the number of Ge atoms in octahedral site decreases and that in tetrahedral site increases. This modification in local order of GeTe originating from the low valence element will affect the crystallization behavior of amorphous GeTe, which is verified by differential scanning calorimetry and transmission electron microscope results. This work not only gives the analysis on the structural change of GeTe with Ag dopants but also provides a method to enhance the thermal stability of amorphous phase-change materials for memory and brain-inspired computing applications.

  1. Ultrafast Terahertz-Induced Response of GeSbTe Phase-Change Materials...

    Office of Scientific and Technical Information (OSTI)

    Title: Ultrafast Terahertz-Induced Response of GeSbTe Phase-Change Materials ... Resource Relation: Journal Name: Appl. Phys. Lett.; Journal Volume: 104; Journal Issue: 25 Research ...

  2. Connecting thermoelectric performance and topological-insulator behavior: Bi2Te3 and Bi2Te2Se from first principles

    DOE PAGES [OSTI]

    Shi, Hongliang; Parker, David S.; Du, Mao-Hua; Singh, David J.

    2015-01-20

    Thermoelectric performance is of interest for numerous applications such as waste-heat recovery and solid-state energy conversion and will be seen to be closely connected to topological-insulator behavior. In this paper, we here report first-principles transport and defect calculations for Bi2Te2Se in relation to Bi2Te3. The two compounds are found to contain remarkably different electronic structures in spite of being isostructural and isoelectronic. We also discuss these results in terms of the topological-insulator characteristics of these compounds.

  3. NREL Collaboration Boosts Potential for CdTe Solar Cells | PV | NREL

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Collaboration Boosts Potential for CdTe Solar Cells February 29, 2016 A critical milestone has been reached in cadmium telluride (CdTe) solar cell technology, helping pave the way for solar energy to directly compete with electricity generated by conventional energy sources. Scientists at the Energy Department's National Renewable Energy Laboratory (NREL) collaborated with researchers at Washington State University and the University of Tennessee to improve the maximum voltage available from a

  4. NREL Collaboration Boosts Potential for CdTe Solar Cells | Solar | NREL

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Collaboration Boosts Potential for CdTe Solar Cells February 29, 2016 A critical milestone has been reached in cadmium telluride (CdTe) solar cell technology, helping pave the way for solar energy to directly compete with electricity generated by conventional energy sources. Scientists at the Energy Department's National Renewable Energy Laboratory (NREL) collaborated with researchers at Washington State University and the University of Tennessee to improve the maximum voltage available from a

  5. Quantitative Determination of Grain-Boundary Recombination Velocity in CdTe

    Office of Scientific and Technical Information (OSTI)

    by Cathodoluminescence Measurements and Numerical Simulations (Journal Article) | SciTech Connect Quantitative Determination of Grain-Boundary Recombination Velocity in CdTe by Cathodoluminescence Measurements and Numerical Simulations Citation Details In-Document Search Title: Quantitative Determination of Grain-Boundary Recombination Velocity in CdTe by Cathodoluminescence Measurements and Numerical Simulations Authors: Kanevce, Ana ; Moseley, John ; Al-Jassim, Mowafak ; Metzger, Wyatt K.

  6. Deformation and shape transitions in hot rotating neutron deficient Te isotopes

    SciTech Connect

    Aggarwal, Mamta; Mazumdar, I.

    2009-08-15

    Evolution of the nuclear shapes and deformations under the influence of temperature and rotation is investigated in Te isotopes with neutron number ranging from the proton drip line to the stability valley. Spin dependent critical temperatures for the shape transitions in Te nuclei are computed. Shape transitions from prolate at low temperature and spin to oblate via triaxiality are seen with increasing neutron number and spin.

  7. Shape-controlled narrow-gap SnTe nanostructures: From nanocubes to nanorods

    Office of Scientific and Technical Information (OSTI)

    and nanowires (Journal Article) | SciTech Connect Shape-controlled narrow-gap SnTe nanostructures: From nanocubes to nanorods and nanowires Citation Details In-Document Search Title: Shape-controlled narrow-gap SnTe nanostructures: From nanocubes to nanorods and nanowires In this study, the rational design and synthesis of narrow-gap colloidal semiconductor nanocrystals (NCs) is an important step toward the next generation of solution-processable photovoltaics, photodetectors, and

  8. Spin glass in semiconducting KFe1.05Ag0.88Te2 single crystals

    DOE PAGES [OSTI]

    Ryu, H.; Lei, H.; Klobes, B.; Warren, J. B.; Hermann, R. P.; Petrovic, C.

    2015-05-26

    We report discovery of KFe1.05Ag0.88Te2 single crystals with semiconducting spin glass ground state. Composition and structure analysis suggest nearly stoichiometric I4/mmm space group but allow for the existence of vacancies, absent in long range semiconducting antiferromagnet KFe1.05Ag0.88Te2. The subtle change in stoichometry in Fe/Ag sublattice changes magnetic ground state but not conductivity, giving further insight into the semiconducting gap mechanism.

  9. NREL Collaboration Boosts Potential for CdTe Solar Cells - News Releases |

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    NREL NREL Collaboration Boosts Potential for CdTe Solar Cells February 29, 2016 A critical milestone has been reached in cadmium telluride (CdTe) solar cell technology, helping pave the way for solar energy to directly compete with electricity generated by conventional energy sources. Scientists at the Energy Department's National Renewable Energy Laboratory (NREL) collaborated with researchers at Washington State University and the University of Tennessee to improve the maximum voltage

  10. Ultrafast Terahertz-Induced Response of GeSbTe Phase-Change Materials

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect Journal Article: Ultrafast Terahertz-Induced Response of GeSbTe Phase-Change Materials Citation Details In-Document Search Title: Ultrafast Terahertz-Induced Response of GeSbTe Phase-Change Materials Authors: Shu, Michael J. ; Zalden, Peter ; Chen, Frank ; Weems, Ben ; Chatzakis, Ioannis ; Xiong, Feng ; Jeyasingh, Rakesh ; Hoffmann, Matthias C. ; Pop, Eric ; Wong, H.-S.Philip ; Wuttig, Matthias ; Lindenberg, Aaron M. Publication Date: 2014-07-08 OSTI

  11. PbTe/TAGS RTG Mars Environmental Survey (MESUR) mission

    SciTech Connect

    Schock, A. )

    1993-01-10

    The paper describes the results of studies on an RTG option for powering the global network of unmanned landers for NASA's Mars Environmental Survey (MESUR) mission. RTGs are essentially unaffected by diurnal and seasonal variations, Martian sandstorms, and landing site latitudes, and their waste heat can stabilize the temperatures of the landers and their payload. The RTG designs described in this paper are based on PbTe/TAGS thermoelectric elements, in contast to the SiGe-based RTGs the author described in previous publications. The presently described RTGs differ not only in the choice of thermoelectric materials but also in the use of much lower operating temperatures, conductive rather than radiative heat transfer, an inert cover gas instead of vacuum in the RTG's converter, and fibrous instead of multifoil thermal insulation. As in a previous Teledyne design, the Fairchild designs described in this paper employ flight-proven General Purpose Source modules and Close-Pack Arrays of thermoelectric converter modules. Illustrative point designs of RTGs producing 41 and 51 watts(e) at 28 volts are presented. The presented performance parameters were derived by detailed thermal, thermoelectric, and electrical analyses (including radiator geometry optimization) described in the paper. The Fairchild study showed that, with appropriate modifications, the Teledyne design can be scaled up to higher power levels, and it identified solutions to ensure adequate fuel clad ductility at launch temperatures and adequate thermal conductance from the thermoelectric cold ends to the RTG housing.

  12. Chiral magnetic effect in ZrTe5

    DOE PAGES [OSTI]

    Li, Q.; Kharzeev, D. E.; Zhang, C.; Huang, Y.; Pletikosic, I.; Fedorov, A. V.; Zhong, R. D.; Schneeloch, J. A.; Gu, G. D.; Valla, T.

    2016-02-08

    The chiral magnetic effect is the generation of electric current induced by chirality imbalance in the presence of magnetic field. It is a macroscopic manifestation of the quantum anomaly in relativistic field theory of chiral fermions (massless spin 1/2 particles with a definite projection of spin on momentum) - a dramatic phenomenon arising from a collective motion of particles and antiparticles in the Dirac sea. The recent discovery of Dirac semimetals with chiral quasi-particles opens a fascinating possibility to study this phenomenon in condensed matter experiments. Here we report on the measurement of magneto-transport in zirconium pentatelluride, ZrTe5 that providesmore » a strong evidence for the chiral magnetic effect. Our angleresolved photoemission spectroscopy experiments show that this material’s electronic structure is consistent with a 3D Dirac semimetal. We observe a large negative magnetoresistance when magnetic field is parallel with the current. The measured quadratic field dependence of the magnetoconductance is a clear indication of the chiral magnetic effect. The observed phenomenon stems from the effective transmutation of Dirac semimetal into a Weyl semimetal induced by the parallel electric and magnetic fields that represent a topologically nontrivial gauge field background. We expect that chiral magnetic effect may emerge in a wide class of materials that are near the transition between the trivial and topological insulators.« less

  13. DEGREE-SCALE GeV 'JETS' FROM ACTIVE AND DEAD TeV BLAZARS

    SciTech Connect

    Neronov, A.; Semikoz, D.; Kachelriess, M.; Ostapchenko, S.; Elyiv, A.

    2010-08-20

    We show that images of TeV blazars in the GeV energy band should contain, along with point-like sources, degree-scale jet-like extensions. These GeV extensions are the result of electromagnetic cascades initiated by TeV {gamma}-rays interacting with extragalactic background light and the deflection of the cascade electrons/positrons in extragalactic magnetic fields (EGMFs). Using Monte Carlo simulations, we study the spectral and timing properties of the degree-scale extensions in simulated GeV band images of TeV blazars. We show that the brightness profile of such degree-scale extensions can be used to infer the light curve of the primary TeV {gamma}-ray source over the past 10{sup 7} yr, i.e., over a time scale comparable to the lifetime of the parent active galactic nucleus. This implies that the degree-scale jet-like GeV emission could be detected not only near known active TeV blazars, but also from 'TeV blazar remnants', whose central engines were switched off up to 10 million years ago. Since the brightness profile of the GeV 'jets' depends on the strength and the structure of the EGMF, their observation provides additional information about the EGMF.

  14. Oxygen Incorporation During Fabrication of Substrate CdTe Photovoltaic Devices: Preprint

    SciTech Connect

    Duenow, J. N.; Dhere, R. G.; Kuciauskas, D.; Li, J. V.; Pankow, J. W.; DeHart, C. M.; Gessert, T. A.

    2012-06-01

    Recently, CdTe photovoltaic (PV) devices fabricated in the nonstandard substrate configuration have attracted increasing interest because of their potential compatibility with flexible substrates such as metal foils and polymer films. This compatibility could lead to the suitability of CdTe for roll-to-roll processing and building-integrated PV. Currently, however, the efficiencies of substrate CdTe devices reported in the literature are significantly lower ({approx}6%-8%) than those of high-performance superstrate devices ({approx}17%) because of significantly lower open-circuit voltage (Voc) and fill factor (FF). In our recent device development efforts, we have found that processing parameters required to fabricate high-efficiency substrate CdTe PV devices differ from those necessary for traditional superstrate CdTe devices. Here, we investigate how oxygen incorporation in the CdTe deposition, CdCl2 heat treatment, CdS deposition, and post-deposition heat treatment affect device characteristics through their effects on the junction. By adjusting whether oxygen is incorporated during these processing steps, we have achieved Voc values greater than 860 mV and efficiencies greater than 10%.

  15. Ion-beam treatment to prepare surfaces of p-CdTe films

    DOEpatents

    Gessert, Timothy A.

    2001-01-01

    A method of making a low-resistance electrical contact between a p-CdTe layer and outer contact layers by ion beam processing comprising: a) placing a CdS/CdTe device into a chamber and evacuating the chamber; b) orienting the p-CdTe side of the CdS/CdTe layer so that it faces apparatus capable of generating Ar atoms and ions of preferred energy and directionality; c) introducing Ar and igniting the area of apparatus capable of generating Ar atoms and ions of preferred energy and directionality in a manner so that during ion exposure, the source-to-substrate distance is maintained such that it is less than the mean-free path or diffusion length of the Ar atoms and ions at the vacuum pressure; d) allowing exposure of the p-CdTe side of the device to said ion beam for a period less than about 5 minutes; and e) imparting movement to the substrate to control the real uniformity of the ion-beam exposure on the p-CdTe side of the device.

  16. Enhanced thermoelectric performance in Cd doped CuInTe{sub 2} compounds

    SciTech Connect

    Cheng, N.; Liu, R.; Bai, S.; Shi, X. Chen, L.

    2014-04-28

    CuIn{sub 1?x}Cd{sub x}Te{sub 2} materials (x?=?0, 0.02, 0.05, and 0.1) are prepared using melting-annealing method and the highly densified bulk samples are obtained through Spark Plasma Sintering. The X-ray diffraction data confirm that nearly pure chalcopyrite structures are obtained in all the samples. Due to the substitution of Cd at In sites, the carrier concentration is greatly increased, leading to much enhanced electrical conductivity and power factor. The single parabolic band model is used to describe the electrical transport properties of CuInTe{sub 2} and the low temperature Hall mobility is also modeled. By combing theoretical model and experiment data, the optimum carrier concentration in CuInTe{sub 2} is proposed to explain the greatly enhanced power factors in the Cd doped CuInTe{sub 2}. In addition, the thermal conductivity is reduced by extra phonon scattering due to the atomic mass and radius fluctuations between Cd and In atoms. The maximum zTs are observed in CuIn{sub 0.98}Cd{sub 0.02}Te{sub 2} and CuIn{sub 0.9}Cd{sub 0.1}Te{sub 2} samples, which are improved by over 100% at room temperature and around 20% at 600?K.

  17. Ultrathin nanosheets of CrSiTe3. A semiconducting two-dimensional ferromagnetic material

    DOE PAGES [OSTI]

    Lin, Ming -Wei; Zhung, Houlong L.; Yan, Jiaqiang; Ward, Thomas Zac; Puretzky, Alexander A.; Rouleau, Christopher M.; Gai, Zheng; Liang, Liangbo; Meunier, Vincent; Ganesh, Panchapakesan; et al

    2015-11-27

    Finite range ferromagnetism and antiferromagnetism in two-dimensional (2D) systems within an isotropic Heisenberg model at non-zero temperature were originally proposed to be impossible. However, recent theoretical studies using an Ising model have recently shown that 2D magnetic crystals can exhibit magnetism. Experimental verification of existing 2D magnetic crystals in this system has remained elusive. In this work we for the first time exfoliate the CrSiTe3, a bulk ferromagnetic semiconductor, to mono- and few-layer 2D crystals onto a Si/SiO2 substrate. The Raman spectra show the good stability and high quality of the exfoliated flakes, consistent with the computed phonon spectra ofmore » 2D CrSiTe3, giving a strong evidence for the existence of 2D CrSiTe3 crystals. When the thickness of the CrSiTe3 crystals is reduced to few-layers, we observed a clear change in resistivity at 80~120 K, consistent with the theoretical calculations on the Curie temperature (Tc) of ~80 K for the magnetic ordering of 2D CrSiTe3 crystals. As a result, the ferromagnetic mono- and few-layer 2D CrSiTe3 indicated here should enable numerous applications in nano-spintronics.« less

  18. Enhanced thermoelectric performance in Cu-intercalated BiTeI by compensation weakening induced mobility improvement

    DOE PAGES [OSTI]

    Wu, Lihua; Yang, Jiong; Chi, Miaofang; Wang, Shanyu; Wei, Ping; Zhang, Wenqing; Chen, Lidong; Yang, Jihui

    2015-09-23

    The low weighted carrier mobility has long been considered to be the key challenge for improvement of thermoelectric (TE) performance in BiTeI. The Rashba-effect-induced two-dimensional density of states in this bulk semiconductor is beneficial for thermopower enhancement, which makes it a prospective compound for TE applications. In this report, we show that intercalation of minor Cu-dopants can substantially alter the equilibria of defect reactions, selectively mediate the donor-acceptor compensation, and tune the defect concentration in the carrier conductive network. Consequently, the potential fluctuations responsible for electron scattering are reduced and the carrier mobility in BiTeI can be enhanced by amore » factor of two to three between 10 K and 300 K. The carrier concentration can also be optimized by tuning the Te/I composition ratio, leading to higher thermopower in this Rashba system. Cu-intercalation in BiTeI gives rise to higher power factor, slightly lower lattice thermal conductivity, and consequently improved figure of merit. Compared with pristine BiTe0.98I1.02, the TE performance in Cu0.05BiTeI reveals a 150% and 20% enhancement at 300 and 520 K, respectively. Ultimately, these results demonstrate that defect equilibria mediated by selective doping in complex TE and energy materials could be an effective approach to carrier mobility and performance optimization.« less

  19. Enhanced thermoelectric performance in Cu-intercalated BiTeI by compensation weakening induced mobility improvement

    SciTech Connect

    Wu, Lihua; Yang, Jiong; Chi, Miaofang; Wang, Shanyu; Wei, Ping; Zhang, Wenqing; Chen, Lidong; Yang, Jihui

    2015-09-23

    The low weighted carrier mobility has long been considered to be the key challenge for improvement of thermoelectric (TE) performance in BiTeI. The Rashba-effect-induced two-dimensional density of states in this bulk semiconductor is beneficial for thermopower enhancement, which makes it a prospective compound for TE applications. In this report, we show that intercalation of minor Cu-dopants can substantially alter the equilibria of defect reactions, selectively mediate the donor-acceptor compensation, and tune the defect concentration in the carrier conductive network. Consequently, the potential fluctuations responsible for electron scattering are reduced and the carrier mobility in BiTeI can be enhanced by a factor of two to three between 10 K and 300 K. The carrier concentration can also be optimized by tuning the Te/I composition ratio, leading to higher thermopower in this Rashba system. Cu-intercalation in BiTeI gives rise to higher power factor, slightly lower lattice thermal conductivity, and consequently improved figure of merit. Compared with pristine BiTe0.98I1.02, the TE performance in Cu0.05BiTeI reveals a 150% and 20% enhancement at 300 and 520 K, respectively. Ultimately, these results demonstrate that defect equilibria mediated by selective doping in complex TE and energy materials could be an effective approach to carrier mobility and performance optimization.

  20. Structural characterization of Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} as a function of temperature using neutron powder diffraction and extended X-ray absorption fine structure techniques

    SciTech Connect

    Mansour, A. N.; Wong-Ng, W.; Huang, Q.; Tang, W.; Thompson, A.; Sharp, J.

    2014-08-28

    The structure of Bi{sub 2}Te{sub 3} (Seebeck coefficient Standard Reference Material (SRM™ 3451)) and the related phase Sb{sub 2}Te{sub 3} have been characterized as a function of temperature using the neutron powder diffraction (NPD) and the extended X-ray absorption fine structure (EXAFS) techniques. The neutron structural studies were carried out from 20 K to 300 K for Bi{sub 2}Te{sub 3} and from 10 K to 298 K for Sb{sub 2}Te{sub 3}. The EXAFS technique for studying the local structure of the two compounds was conducted from 19 K to 298 K. Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} are isostructural, with a space group of R3{sup ¯}m. The structure consists of repeated quintuple layers of atoms, Te2-M-Te1-M-Te2 (where M = Bi or Sb) stacking along the c-axis of the unit cell. EXAFS was used to examine the bond distances and static and thermal disorders for the first three shells of Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} as a function of temperature. The temperature dependencies of thermal disorders were analyzed using the Debye and Einstein models for lattice vibrations. The Debye and Einstein temperatures for the first two shells of Bi{sub 2}Te{sub 3} are similar to those of Sb{sub 2}Te{sub 3} within the uncertainty in the data. However, the Debye and Einstein temperatures for the third shell of Bi-Bi are significantly lower than those of the third shell of Sb-Sb. The Einstein temperature for the third shell is consistent with a soft phonon mode in both Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3}. The lower Einstein temperature of Bi-Bi relative to Sb-Sb is consistent with the lower value of thermal conductivity of Bi{sub 2}Te{sub 3} relative to Sb{sub 2}Te{sub 3}.

  1. Carrier lifetimes and interface recombination velocities in CdTe/Mg{sub x}Cd{sub 1−x}Te double heterostructures with different Mg compositions grown by molecular beam epitaxy

    SciTech Connect

    Liu, Shi; Lassise, Maxwell B.; Zhao, Yuan; Zhang, Yong-Hang; Zhao, Xin-Hao; Campbell, Calli M.

    2015-07-27

    The interface recombination velocities of CdTe/Mg{sub x}Cd{sub 1−x}Te double heterostructure (DH) samples with different CdTe layer thicknesses and Mg compositions are studied using time-resolved photoluminescence measurements. A lowest interface recombination velocity of 30 ± 10 cm/s has been measured for the CdTe/Mg{sub 0.46}Cd{sub 0.54}Te interface, and a longest carrier lifetime of 0.83 μs has been observed for the studied DHs. These values are very close to the best reported numbers for GaAs/AlGaAs DHs. The impact of carrier escape through thermionic emission over the MgCdTe barrier on the recombination process in the DHs is also studied.

  2. Disorder-induced anomalously signed Hall effect in crystalline GeTe/Sb{sub 2}Te{sub 3} superlattice-like materials

    SciTech Connect

    Tong, H.; Yu, N. N.; Yang, Z.; Cheng, X. M.; Miao, X. S.

    2015-08-21

    Opposite to the almost persistent p-type conductivity of the crystalline chalcogenides along the GeTe-Sb{sub 2}Te{sub 3} tie line, n-type Hall mobility is observed in crystalline GeTe/Sb{sub 2}Te{sub 3} superlattice-like material (SLL) with a short period length. We suggest that this unusual carrier characteristic originates from the structural disorder introduced by the lattice strain and dangling bonds at the SLL interfaces, which makes the crystalline SLLs behave like the amorphous chalcogenides. Detailed structural disorder in crystalline SLL has been studied by Raman scattering, X-ray photoelectron spectroscopy, as well as Variable-energy positron annihilation spectroscopy measurements. First-principles calculations results show that this structural disorder gives rise to three-site junctions that dominate the charge transport as the period length decreases and result in the anomalously signed Hall effect in the crystalline SLL. Our findings indicate a similar tetrahedral structure in the amorphous and crystalline states of SLLs, which can significantly reduce the entropy difference. Due to the reduced entropy loss and increased resistivity of crystalline phase introduced by disorder, it is not surprising that the SLLs exhibit extremely lower RESET current and power consumption.

  3. The electronic structure and thermoelectric properties of BiTl{sub 9}Te{sub 6} and SbTl{sub 9}Te{sub 6}: First-principles calculations

    SciTech Connect

    Guo, Li Bin; Ye, Lingyun; Wang, Yuan Xu Yang, Jue Ming; Yan, Yu Li; Ren, Feng Zhu

    2015-12-21

    The electronic structure and thermoelectric properties of MTl{sub 9}Te{sub 6} (M = Bi, Sb) were studied using density functional theory and the semiclassical Boltzmann theory. It is found that the band gaps of BiTl{sub 9}Te{sub 6} and SbTl{sub 9}Te{sub 6} are equal to 0.59 eV and 0.72 eV, respectively. The relative large band gap and strong coupling between Sb s and Te p are helpful to the thermoelectric properties of SbTl{sub 9}Te{sub 6}. Near the bottom of the conduction bands, the number of band valleys of SbTl{sub 9}Te{sub 6} is four and is larger than that of BiTl{sub 9}Te{sub 6} (two band valleys), which will increase its Seebeck coefficient. Although BiTl{sub 9}Te{sub 6} has a larger electrical conductivity relative to relaxation time (σ/τ) along the z-direction than that of SbTl{sub 9}Te{sub 6}, the results show that the transport properties of SbTl{sub 9}Te{sub 6} are better than those of BiTl{sub 9}Te{sub 6} possibly due to its large Seebeck coefficient. The maximum value of power factor relative to relaxation time (S{sup 2}σ/τ) for SbTl{sub 9}Te{sub 6} reaches 4.30 × 10{sup 11 }W/K{sup 2} m s at 900 K, that is, originated from its relatively large Seebeck coefficient, suggesting its promising thermoelectric performance at high temperature.

  4. The role of oxygen in CdS/CdTe solar cells deposited by close-spaced sublimation

    SciTech Connect

    Rose, D.H.; Levi, D.H.; Matson, R.J.

    1996-05-01

    The presence of oxygen during close-spaced sublimation (CSS) of CdTe has been previously reported to be essential for high-efficiency CdS/CdTe solar cells because it increases the acceptor density in the absorber. The authors find that the presence of oxygen during CSS increases the nucleation site density of CdTe, thus decreasing pinhole density and grain size. Photoluminescence showed that oxygen decreases material quality in the bulk of the CdTe film, but positively impacts the critical CdS/CdTe interface. Through device characterization the authors were unable to verify an increase in acceptor density with increased oxygen. These results, along with the achievement of high-efficiency cells (13% AM1.5) without the use of oxygen, led the authors to conclude that the use of oxygen during CSS deposition of CdTe can be useful but is not essential.

  5. First-epoch VLBA imaging of 20 new TeV blazars

    SciTech Connect

    Piner, B. Glenn; Edwards, Philip G.

    2014-12-10

    We present Very Long Baseline Array (VLBA) images of 20 TeV blazars not previously well studied on the parsec scale. All 20 of these sources are high-frequency peaked BL Lac objects (HBLs). Observations were made between August and December of 2013 at a frequency of 8.4 GHz. These observations represent the first epoch of a VLBA monitoring campaign on these blazars, and they significantly increase the fraction of TeV HBLs studied with high-resolution imaging. The peak very long baseline interferometry (VLBI) flux densities of these sources range from ∼10 to ∼100 mJy bm{sup –1}, and parsec-scale jet structure is detected in all sources. About half of the VLBI cores are resolved, with brightness temperature upper limits of a few times 10{sup 10} K, and we find that a brightness temperature of ∼2 × 10{sup 10} K is consistent with the VLBI data for all but one of the sources. Such brightness temperatures do not require any relativistic beaming to reduce the observed value below commonly invoked intrinsic limits; however, the lack of detection of counterjets does place a modest limit on the bulk Lorentz factor of γ ≳ 2. These data are thus consistent with a picture where weak-jet sources like the TeV HBLs develop significant velocity structures on parsec scales. We also extend consideration to the full sample of TeV HBLs by combining the new VLBI data with VLBI and gamma-ray data from the literature. By comparing measured VLBI and TeV fluxes to samples with intrinsically uncorrelated luminosities generated by Monte Carlo simulations, we find a marginally significant correlation between the VLBI and TeV fluxes for the full TeV HBL sample.

  6. Development of a Total Energy, Environment and Asset Management (TE2AM tm) Curriculum

    SciTech Connect

    2012-12-31

    The University of Wisconsin Department of Engineering Professional Development (EPD) has completed the sponsored project entitled, Development of a Total Energy, Environment and Asset Management (TE2AM™) Curriculum. The project involved the development of a structured professional development program to improve the knowledge, skills, capabilities, and competencies of engineers and operators of commercial buildings. TE2AM™ advances a radically different approach to commercial building design, operation, maintenance, and end-­‐of-­‐life disposition. By employing asset management principles to the lifecycle of a commercial building, owners and occupants will realize improved building performance, reduced energy consumption and positive environmental impacts. Through our commercialization plan, we intend to offer TE2AM™ courses and certificates to the professional community and continuously improve TE2AM™ course materials. The TE2AM™ project supports the DOE Strategic Theme 1 -­‐ Energy Security; and will further advance the DOE Strategic Goal 1.4 Energy Productivity. Through participation in the TE2AM™ curriculum, engineers and operators of commercial buildings will be eligible for a professional certificate; denoting the completion of a prescribed series of learning activities. The project involved a comprehensive, rigorous approach to curriculum development, and accomplished the following goals: 1. Identify, analyze and prioritize key learning needs of engineers, architects and technical professionals as operators of commercial buildings. 2. Design and develop TE2AM™ curricula and instructional strategies to meet learning needs of the target learning community. 3. Establish partnerships with the sponsor and key stakeholders to enhance the development and delivery of learning programs. 4. Successfully commercialize and sustain the training and certificate programs for a substantial time following the term of the award. The project team was

  7. Vibrational properties of epitaxial Bi{sub 4}Te{sub 3} films as studied by Raman spectroscopy

    SciTech Connect

    Xu, Hao; Pan, Wenwu; Chen, Qimiao; Wu, Xiaoyan; Song, Yuxin E-mail: shumin@chalmers.se; Gong, Qian; Lu, Pengfei; Wang, Shumin E-mail: shumin@chalmers.se

    2015-08-15

    Bi{sub 4}Te{sub 3}, as one of the phases of the binary Bi–Te system, shares many similarities with Bi{sub 2}Te{sub 3}, which is known as a topological insulator and thermoelectric material. We report the micro-Raman spectroscopy study of 50 nm Bi{sub 4}Te{sub 3} films on Si substrates prepared by molecular beam epitaxy. Raman spectra of Bi{sub 4}Te{sub 3} films completely resolve the six predicted Raman-active phonon modes for the first time. Structural features and Raman tensors of Bi{sub 4}Te{sub 3} films are introduced. According to the wavenumbers and assignments of the six eigenpeaks in the Raman spectra of Bi{sub 4}Te{sub 3} films, it is found that the Raman-active phonon oscillations in Bi{sub 4}Te{sub 3} films exhibit the vibrational properties of those in both Bi and Bi{sub 2}Te{sub 3} films.

  8. Reduction of Fermi level pinning and recombination at polycrystalline CdTe surfaces by laser irradiation

    SciTech Connect

    Simonds, Brian J.; Kheraj, Vipul; Palekis, Vasilios; Ferekides, Christos; Scarpulla, Michael A.

    2015-06-14

    Laser processing of polycrystalline CdTe is a promising approach that could potentially increase module manufacturing throughput while reducing capital expenditure costs. For these benefits to be realized, the basic effects of laser irradiation on CdTe must be ascertained. In this study, we utilize surface photovoltage spectroscopy (SPS) to investigate the changes to the electronic properties of the surface of polycrystalline CdTe solar cell stacks induced by continuous-wave laser annealing. The experimental data explained within a model consisting of two space charge regions, one at the CdTe/air interface and one at the CdTe/CdS junction, are used to interpret our SPS results. The frequency dependence and phase spectra of the SPS signal are also discussed. To support the SPS findings, low-temperature spectrally-resolved photoluminescence and time-resolved photoluminescence were also measured. The data show that a modest laser treatment of 250 W/cm{sup 2} with a dwell time of 20 s is sufficient to reduce the effects of Fermi level pinning at the surface due to surface defects.

  9. Intergalactic magnetic fields and gamma-ray observations of extreme TeV blazars

    SciTech Connect

    Arlen, Timothy C.; Vassilev, Vladimir V.; Weisgarber, Thomas; Wakely, Scott P.; Shafi, S. Yusef

    2014-11-20

    The intergalactic magnetic field (IGMF) in cosmic voids can be indirectly probed through its effect on electromagnetic cascades initiated by a source of teraelectronvolt (TeV) gamma-rays, such as active galactic nuclei (AGNs). AGNs that are sufficiently luminous at TeV energies, 'extreme TeV blazars', can produce detectable levels of secondary radiation from inverse Compton scattering of the electrons in the cascade, provided that the IGMF is not too large. We review recent work in the literature that utilizes this idea to derive constraints on the IGMF for three TeV-detected blazars, 1ES 0229+200, 1ES 1218+304, and RGB J0710+591, and we also investigate four other hard-spectrum TeV blazars in the same framework. Through a recently developed, detailed, three-dimensional particle-tracking Monte Carlo code, incorporating all major effects of QED and cosmological expansion, we research the effects of major uncertainties, such as the spectral properties of the source, uncertainty in the ultraviolet and far-infrared extragalactic background light, undersampled very high energy (energy ≥100 GeV) coverage, past history of gamma-ray emission, source versus observer geometry, and the jet AGN Doppler factor. The implications of these effects on the recently reported lower limits of the IGMF are thoroughly examined to conclude that the presently available data are compatible with a zero-IGMF hypothesis.

  10. Static atomic displacements in a CdTe epitaxial layer on a GaAs substrate

    SciTech Connect

    Horning, R.D.; Staudenmann, J.

    1987-05-25

    A (001)CdTe epitaxial layer on a (001)GaAs substrate was studied by x-ray diffraction between 10 and 360 K. The CdTe growth took place at 380 /sup 0/C in a vertical gas flow metalorganic chemical vapor deposition reactor. Lattice parameters and integrated intensities of both the substrate and the epitaxial layer using the (00l) and (hhh) Bragg reflections reveal three important features. Firstly, the GaAs substrate does not exhibit severe strain after deposition and it is as perfect as a bulk GaAs. Secondly, the CdTe unit cell distorts tetragonally with a/sub perpendicular/>a/sub parallel/ below 300 K. The decay of the (00l) reflection intensities as a function of the temperature yields a Debye temperature of 142 K, the same value as for bulk CdTe. Thirdly, a temperature-dependent isotropic static displacement of the Cd and the Te atoms is introduced to account for the anomalous behavior of the (hhh) intensities.

  11. An Experiment to Locate the Site of TeV Flaring in M87

    SciTech Connect

    Harris, D.E.; /Harvard-Smithsonian Ctr. Astrophys.; Massaro, F.; /Harvard-Smithsonian Ctr. Astrophys. /KIPAC, Menlo Park /SLAC; Cheung, C.C.; /Natl. Acad. Sci. /Naval Research Lab, Wash., D.C.; Horns, D.; Raue, M.; /Hamburg U.; Stawarz, L.; /JAXA, Sagamihara /Jagiellonian U., Astron. Observ.; Wagner, S.; /Heidelberg Observ.; Colin, P.; /Munich, Max Planck Inst.; Mazin, D.; /Barcelona, IFAE; Wagner, R.; /Munich, Max Planck Inst.; Beilicke, M.; /McDonnell Ctr. Space Sci.; LeBohec, S.; Hui, M.; /Utah U.; Mukherjee, R.; /Barnard Coll.

    2012-05-18

    We describe a Chandra X-ray target-of-opportunity project designed to isolate the site of TeV flaring in the radio galaxy M87. To date, we have triggered the Chandra observations only once (2010 April) and by the time of the first of our nine observations, the TeV flare had ended. However, we found that the X-ray intensity of the unresolved nucleus was at an elevated level for our first observation. Of the more than 60 Chandra observations we have made of the M87 jet covering nine years, the nucleus was measured at a comparably high level only three times. Two of these occasions can be associated with TeV flaring, and at the time of the third event, there were no TeV monitoring activities. From the rapidity of the intensity drop of the nucleus, we infer that the size of the emitting region is of order a few light days x the unknown beaming factor; comparable to the same sort of estimate for the TeV emitting region. We also find evidence of spectral evolution in the X-ray band which seems consistent with radiative losses affecting the non-thermal population of the emitting electrons within the unresolved nucleus.

  12. Systematic study of doping dependence on linear magnetoresistance in p-PbTe

    SciTech Connect

    Schneider, J. M.; Chitta, V. A.; Oliveira, N. F.; Peres, M. L. Castro, S. de; Soares, D. A. W.; Wiedmann, S.; Zeitler, U.; Abramof, E.; Rappl, P. H. O.; Mengui, U. A.

    2014-10-20

    We report on a large linear magnetoresistance effect observed in doped p-PbTe films. While undoped p-PbTe reveals a sublinear magnetoresistance, p-PbTe films doped with BaF{sub 2} exhibit a transition to a nearly perfect linear magnetoresistance behaviour that is persistent up to 30?T. The linear magnetoresistance slope ?R/?B is to a good approximation, independent of temperature. This is in agreement with the theory of Quantum Linear Magnetoresistance. We also performed magnetoresistance simulations using a classical model of linear magnetoresistance. We found that this model fails to explain the experimental data. A systematic study of the doping dependence reveals that the linear magnetoresistance response has a maximum for small BaF{sub 2} doping levels and diminishes rapidly for increasing doping levels. Exploiting the huge impact of doping on the linear magnetoresistance signal could lead to new classes of devices with giant magnetoresistance behavior.

  13. Effects of Stoichiometry in Undoped CdTe Heteroepilayers on Si

    SciTech Connect

    Gessert, Timothy A.; Colegrove, Eric; Stafford, Brian; Gao, Wei; Sivananthan, Siva; Kuciauskas, Darius; Moutinho, Helio; Farrell, Stuart; Barnes, Teresa

    2015-06-14

    Crystalline CdTe layers have been grown heteroepitaxially onto crystalline Si substrates to establish material parameters needed for advanced photovoltaic (PV) device development and related simulation. These studies suggest that additional availability of the intrinsic anion (i.e., Te) during molecular beam epitaxy deposition can improve structural and optoelectronic quality of the epilayer and the interface between Si substrate and the epilayer. This is seen most notably for thin CdTe epitaxial films (<; ~10 micrometers). Although these observations are foundationally important, they are also relevant to envisioned high-performance multijunction II-VI alloy PV devices-where thin layers will be required to achieve production costs aligned with market constraints.

  14. Ba{sub 2}TeO as an optoelectronic material: First-principles study

    SciTech Connect

    Sun, Jifeng; Shi, Hongliang; Du, Mao-Hua; Singh, David J.; Siegrist, Theo

    2015-05-21

    The band structure, optical, and defects properties of Ba{sub 2}TeO are systematically investigated using density functional theory with a view to understanding its potential as an optoelectronic or transparent conducting material. Ba{sub 2}TeO crystallizes with tetragonal structure (space group P4/nmm) and with a 2.93 eV optical bandgap [Besara et al., J. Solid State Chem. 222, 60 (2015)]. We find relatively modest band masses for both electrons and holes suggesting applications. Optical properties show infrared-red absorption when doped. This could potentially be useful for combining wavelength filtering and transparent conducting functions. Furthermore, our defect calculations show that Ba{sub 2}TeO is intrinsically p-type conducting under Ba-poor condition. However, the spontaneous formation of the donor defects may constrain the p-type transport properties and would need to be addressed to enable applications.

  15. Experimental Realization of a Three-Dimensional Topological Insulator, Bi 2Te3

    SciTech Connect

    Siemons, W.

    2010-02-24

    Three-dimensional topological insulators are a new state of quantum matter with a bulk gap and odd number of relativistic Dirac fermions on the surface. By investigating the surface state of Bi{sub 2}Te{sub 3} with angle-resolved photoemission spectroscopy, we demonstrate that the surface state consists of a single nondegenerate Dirac cone. Furthermore, with appropriate hole doping, the Fermi level can be tuned to intersect only the surface states, indicating a full energy gap for the bulk states. Our results establish that Bi{sub 2}Te{sub 3} is a simple model system for the three-dimensional topological insulator with a single Dirac cone on the surface. The large bulk gap of Bi{sub 2}Te{sub 3} also points to promising potential for high-temperature spintronics applications.

  16. Superconducting thin films of (100) and (111) oriented indium doped topological crystalline insulator SnTe

    DOE PAGES [OSTI]

    Si, W.; Zhang, C.; Wu, L.; Ozaki, T.; Gu, G.; Li, Q.

    2015-09-01

    Recent discovery of the topological crystalline insulator SnTe has triggered a search for topological superconductors, which have potential application to topological quantum computing. The present work reports on the superconducting properties of indium doped SnTe thin films. The (100) and (111) oriented thin films were epitaxially grown by pulsed-laser deposition on (100) and (111) BaF2 crystalline substrates respectively. The onset superconducting transition temperatures are about 3.8 K for (100) and 3.6 K for (111) orientations, slightly lower than that of the bulk. Magneto-resistive measurements indicate that these thin films may have upper critical fields higher than that of the bulk.more » With large surface-to-bulk ratio, superconducting indium doped SnTe thin films provide a rich platform for the study of topological superconductivity and potential device applications based on topological superconductors.« less

  17. Role of polycrystallinity in CdTe and CuInSe sub 2 photovoltaic cells

    SciTech Connect

    Sites, J.R. )

    1991-01-01

    The polycrystalline nature of thin-film CdTe and CuInSe{sub 2} solar cells continues to be a major factor in several individual losses that limit overall cell efficiency. This report describes progress in the quantitative separation of these losses, including both measurement and analysis procedures. It also applies these techniques to several individual cells to help document the overall progress with CdTe and CuInSe{sub 2} cells. Notably, CdTe cells from Photon Energy have reduced window photocurrent losses to 1 mA/Cm{sup 2}; those from the University of South Florida have achieved a maximum power voltage of 693 mV; and CuInSe{sub 2} cells from International Solar Electric Technology have shown a hole density as high as 7 {times} 10{sup 16} cm{sup {minus}3}, implying a significant reduction in compensation. 9 refs.

  18. Ba2TeO: A new layered oxytelluride

    SciTech Connect

    Besara, T.; Ramirez, D.; Sun, J.; Whalen, J. B.; Tokumoto, T. D.; McGill, S. A.; Singh, D. J.; Siegrist, T.

    2015-02-01

    For single crystals of the new semiconducting oxytelluride phase, Ba2TeO, we synthesized from barium oxide powder and elemental tellurium in a molten barium metal flux. Ba2TeO crystallizes in tetragonal symmetry with space group P4/nmm (#129), a=5.0337(1) Å, c=9.9437(4) Å, Z=2. The crystals were characterized by single crystal x-ray diffraction, heat capacity and optical measurements. Moreover, the optical measurements along with electronic band structure calculations indicate semiconductor behavior with a band gap of 2.93 eV. Resistivity measurements show that Ba2TeO is highly insulating.

  19. Simulation of Electric Field in Semi Insulating Au/CdTe/Au Detector under Flux

    SciTech Connect

    Franc, J.; James, R.; Grill, R.; Kubat, J.; Belas, E.; Hoschl, P.; Moravec, P.; Praus, P.

    2009-08-02

    We report our simulations on the profile of the electric field in semi insulating CdTe and CdZnTe with Au contacts under radiation flux. The type of the space charge and electric field distribution in the Au/CdTe/Au structure is at high fluxes result of a combined influence of charge formed due to band bending at the electrodes and from photo generated carriers, which are trapped at deep levels. Simultaneous solution of drift-diffusion and Poisson equations is used for the calculation. We show, that the space charge originating from trapped photo-carriers starts to dominate at fluxes 10{sup 15}-10{sup 16}cm{sup -2}s{sup -1}, when the influence of contacts starts to be negligible.

  20. Ba2TeO as an optoelectronic material: First-principles study

    DOE PAGES [OSTI]

    Sun, Jifeng; Shi, Hongliang; Du, Mao-Hua; Siegrist, Theo; Singh, David J.

    2015-05-21

    The band structure, optical and defects properties of Ba2TeO are systematically investigated using density functional theory with a view to understanding its potential as an optoelectronic or transparent conducting material. Ba2TeO crystallizes with tetragonal structure (space group P4/nmm) and with a 2.93 eV optical band gap1. We find relatively modest band masses for both electrons and holes suggesting applications. Optical properties show a infrared-red absorption when doped. This could potentially be useful for combining wavelength filtering and transparent conducting functions. Furthermore, our defect calculations show that Ba2TeO is intrinsically p-type conducting under Ba-poor condition. However, the spontaneous formation of themore » donor defects may constrain the p-type transport properties and would need to be addressed to enable applications.« less

  1. Thermoelectric properties of indium doped PbTe{sub 1-y}Se{sub y} alloys

    SciTech Connect

    Bali, Ashoka; Mallik, Ramesh Chandra; Wang, Heng; Snyder, G. Jeffrey

    2014-07-21

    Lead telluride and its alloys are well known for their thermoelectric applications. Here, a systematic study of PbTe{sub 1-y}Se{sub y} alloys doped with indium has been done. The powder X-Ray diffraction combined with Rietveld analysis confirmed the polycrystalline single phase nature of the samples, while microstructural analysis with scanning electron microscope results showed densification of samples and presence of micrometer sized particles. The temperature dependent transport properties showed that in these alloys, indium neither pinned the Fermi level as it does in PbTe, nor acted as a resonant dopant as in SnTe. At high temperatures, bipolar effect was observed which restricted the zT to 0.66 at 800 K for the sample with 30% Se content.

  2. Superconducting thin films of (100) and (111) oriented indium doped topological crystalline insulator SnTe

    SciTech Connect

    Si, W.; Zhang, C.; Wu, L.; Ozaki, T.; Gu, G.; Li, Q.

    2015-09-01

    Recent discovery of the topological crystalline insulator SnTe has triggered a search for topological superconductors, which have potential application to topological quantum computing. The present work reports on the superconducting properties of indium doped SnTe thin films. The (100) and (111) oriented thin films were epitaxially grown by pulsed-laser deposition on (100) and (111) BaF2 crystalline substrates respectively. The onset superconducting transition temperatures are about 3.8 K for (100) and 3.6 K for (111) orientations, slightly lower than that of the bulk. Magneto-resistive measurements indicate that these thin films may have upper critical fields higher than that of the bulk. With large surface-to-bulk ratio, superconducting indium doped SnTe thin films provide a rich platform for the study of topological superconductivity and potential device applications based on topological superconductors.

  3. Pair correlations in neutrinoless double {beta} decay candidate {sup 130}Te.

    SciTech Connect

    Bloxham, T.; Kay, B. P.; Schiffer, J. P.; Clark, J. A.; Deibel, C. M.; Freeman, S. J.; Freedman, S. J.; Howard, A. M.; McAllister, S. A.; Parker, P. D.; Sharp, D. K.; Thomas, J. S. (Physics); ( PSC-USR); (LBNL); (Michigan State Univ.); (Univ. of Manchester); (Yale Univ.)

    2010-08-16

    Pair correlations in the ground state of {sup 130}Te have been investigated using pair-transfer experiments to explore the validity of approximations in calculating the matrix element for neutrinoless double-{beta} decay. This nucleus is a candidate for the observation of such decay, and a good understanding of its structure is crucial for eventual calculations of the neutrino mass, should such a decay indeed be observed. For proton-pair adding, strong transitions to excited 0{sup +} states had been observed in the Te isotopes by Alford et al. [Nucl. Phys. A 323, 339 (1979)], indicating a breaking of the BCS approximation for protons in the ground state. We measured the neutron-pair removing (p,t) reaction on {sup 130}Te and found no indication of a corresponding splitting of the BCS nature of the ground state for neutrons.

  4. Pair correlations in the neutrinoless double-{beta} decay candidate {sup 130}Te

    SciTech Connect

    Bloxham, T.; Freedman, S. J. [Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Kay, B. P.; Schiffer, J. P.; Clark, J. A. [Physics Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Deibel, C. M. [Physics Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Joint Institute for Nuclear Astrophysics, Michigan State University, East Lansing, Michigan 48825 (United States); Freeman, S. J.; Howard, A. M.; McAllister, S. A.; Sharp, D. K.; Thomas, J. S. [Schuster Laboratory, University of Manchester, Manchester, M13 9PL (United Kingdom); Parker, P. D. [A. W. Wright Nuclear Structure Laboratory, Yale University, New Haven, Connecticut 06520 (United States)

    2010-08-15

    Pair correlations in the ground state of {sup 130}Te have been investigated using pair-transfer experiments to explore the validity of approximations in calculating the matrix element for neutrinoless double-{beta} decay. This nucleus is a candidate for the observation of such decay, and a good understanding of its structure is crucial for eventual calculations of the neutrino mass, should such a decay indeed be observed. For proton-pair adding, strong transitions to excited 0{sup +} states had been observed in the Te isotopes by Alford et al. [Nucl. Phys. A 323, 339 (1979)], indicating a breaking of the BCS approximation for protons in the ground state. We measured the neutron-pair removing (p,t) reaction on {sup 130}Te and found no indication of a corresponding splitting of the BCS nature of the ground state for neutrons.

  5. Thermoelectric study of crossroads material MnTe via sulfur doping

    SciTech Connect

    Xie, Wenjie Populoh, Sascha; Sagarna, Leyre; Trottmann, Matthias; Ga??zka, Krzysztof; Xiao, Xingxing; Liu, Yufei; He, Jian; Weidenkaff, Anke

    2014-03-14

    Here, we report thermoelectric study of crossroads material MnTe via iso-electronic doping S on the Te-site. MnTe{sub 1-x}S{sub x} samples with nominal S content of x?=?0.00, 0.05, and 0.10 were prepared using a melt-quench method followed by pulverization and spark plasma sintering. The X-ray powder diffraction, scanning electron microscopy, and ZAF-corrected compositional analysis confirmed that S uniformly substitutes Te up to slightly over 2%. A higher content of S in the starting materials led to the formation of secondary phases. The thermoelectric properties of MnTe{sub 1-x}S{sub x} samples were characterized by means of Seebeck coefficient, electrical conductivity, and thermal conductivity measurements from 300?K to 773?K. Furthermore, Hall coefficient measurements and a single parabolic band model were used to help gain insights on the effects of S-doping on the scattering mechanism and the carrier effective mass. As expected, S doping not only introduced hole charge carriers but also created short-range defects that effectively scatter heat-carrying phonons at elevated temperatures. On the other hand, we found that S doping degraded the effective mass. As a result, the ZT of MnTe{sub 0.9}S{sub 0.1} was substantially enhanced over the pristine sample near 400?K, while the improvement of ZT became marginal at elevated temperatures. A ZT???0.65 at 773?K was obtained in all three samples.

  6. Synthesis, crystal and electronic structure, and physical properties of the new lanthanum copper telluride La{sub 3}Cu{sub 5}Te{sub 7}

    SciTech Connect

    Zelinska, Mariya; Assoud, Abdeljalil [Department of Chemistry, University of Waterloo, Waterloo, ON, Canada N2L 3G1 (Canada); Kleinke, Holger, E-mail: kleinke@uwaterloo.c [Department of Chemistry, University of Waterloo, Waterloo, ON, Canada N2L 3G1 (Canada)

    2011-03-15

    The new lanthanum copper telluride La{sub 3}Cu{sub 5-x}Te{sub 7} has been obtained by annealing the elements at 1073 K. Single-crystal X-ray diffraction studies revealed that the title compound crystallizes in a new structure type, space group Pnma (no. 62) with lattice dimensions of a=8.2326(3) A, b=25.9466(9) A, c=7.3402(3) A, V=1567.9(1) A{sup 3}, Z=4 for La{sub 3}Cu{sub 4.86(4)}Te{sub 7}. The structure of La{sub 3}Cu{sub 5-x}Te{sub 7} is remarkably complex. The Cu and Te atoms build up a three-dimensional covalent network. The coordination polyhedra include trigonal LaTe{sub 6} prisms, capped trigonal LaTe{sub 7} prisms, CuTe{sub 4} tetrahedra, and CuTe{sub 3} pyramids. All Cu sites exhibit deficiencies of various extents. Electrical property measurements on a sintered pellet of La{sub 3}Cu{sub 4.86}Te{sub 7} indicate that it is a p-type semiconductor in accordance with the electronic structure calculations. -- Graphical abstract: Oligomeric unit comprising interconnected CuTe{sub 3} pyramids and CuTe{sub 4} tetrahedra. Display Omitted Research highlights: {yields} La{sub 3}Cu{sub 5-x}Te{sub 7} adopts a new structure type. {yields} All Cu sites exhibit deficiencies of various extents. {yields} The coordination polyhedra include trigonal LaTe{sub 6} prisms, capped trigonal LaTe{sub 7} prisms, CuTe{sub 4} tetrahedra and CuTe{sub 3} pyramids. {yields} La{sub 3}Cu{sub 5-x}Te{sub 7} is a p-type semiconductor.

  7. Multiband Te p Based Superconductivity of Ta4Pd3Te16

    SciTech Connect

    Singh, David J.

    2014-10-06

    We recently discovered that Ta4Pd3Te16 is a superconductor that has been suggested to be an unconventional superconductor near magnetism. Here, we report electronic structure calculations showing that despite the layered crystal structure the material is an anisotropic three-dimensional (3D) metal. The Fermi surface contains prominent one-dimensional (1D) and two-dimensional (2D) features, including nested 1D sheets, a 2D cylindrical section, and a 3D sheet. Moreover, the electronic states that make up the Fermi surface are mostly derived from Te p states with small Ta d and Pd d contributions. This places the compound far from magnetic instabilities. The results are discussed in terms of multiband superconductivity.

  8. Renaissance of the ~1 TeV Fixed-Target Program

    SciTech Connect

    Adams, T.; Appel, Jeffrey A.; Arms, Kregg Elliott; Balantekin, A.B.; Conrad, Janet Marie; Cooper, Peter S.; Djurcic, Zelimir; Dunwoodie, William M.; Engelfried, Jurgen; Fisher, Peter H.; Gottschalk, E.; /Fermilab /Northwestern U.

    2009-05-01

    This document describes the physics potential of a new fixed-target program based on a {approx} TeV proton source. Two proton sources are potentially available in the future: the existing Tevatron at Fermilab, which can provide 800 GeV protons for fixed-target physics, and a possible upgrade to the SPS at CERN, called SPS+, which would produce 1 TeV protons on target. In this paper we use an example Tevatron fixed-target program to illustrate the high discovery potential possible in the charm and neutrino sectors. We highlight examples which are either unique to the program or difficult to accomplish at other venues.

  9. Renaissance of the ~ 1-TeV Fixed-Target Program

    SciTech Connect

    Adams, T.; Appel, J.A.; Arms, K.E.; Balantekin, A.B.; Conrad, J.M.; Cooper, P.S.; Djurcic, Z.; Dunwoodie, W.; Engelfried, J.; Fisher, P.H.; Gottschalk, Erik Edward; de Gouvea, A.; Heller, K.; Ignarra, C.M.; Karagiorgi, G.; Kwan, S.; Loinaz, W.A.; Meadows, B.; Moore, R.; Morfin, J.G.; Naples, D.; /Pittsburgh U. /St. Mary's Coll., Minnesota /New Mexico State U. /Michigan U. /Wayne State U. /South Carolina U. /Florida U. /Carnegie Mellon U. /Cincinnati U. /Columbia U. /Columbia U. /Northwestern U. /Yale U. /Fermilab /Argonne /Northwestern U. /APC, Paris

    2011-12-02

    This document describes the physics potential of a new fixed-target program based on a {approx}1 TeV proton source. Two proton sources are potentially available in the future: the existing Tevatron at Fermilab, which can provide 800 GeV protons for fixed-target physics, and a possible upgrade to the SPS at CERN, called SPS+, which would produce 1 TeV protons on target. In this paper we use an example Tevatron fixed-target program to illustrate the high discovery potential possible in the charm and neutrino sectors. We highlight examples which are either unique to the program or difficult to accomplish at other venues.

  10. Optical Observations of Gamma-Ray Bursts: Connections to GeV/TeV Jets

    Office of Scientific and Technical Information (OSTI)

    (Conference) | SciTech Connect Conference: Optical Observations of Gamma-Ray Bursts: Connections to GeV/TeV Jets Citation Details In-Document Search Title: Optical Observations of Gamma-Ray Bursts: Connections to GeV/TeV Jets Authors: Vestrand, W. Thomas [1] + Show Author Affiliations Los Alamos National Laboratory Publication Date: 2013-08-21 OSTI Identifier: 1091318 Report Number(s): LA-UR-13-26624 DOE Contract Number: AC52-06NA25396 Resource Type: Conference Resource Relation: Conference:

  11. Preliminary design for a 20 TeV Collider in a deep tunnel at Fermilab

    SciTech Connect

    Not Available

    1985-01-12

    The Reference Design Study for a 20 TeV Collider demonstrated the technical and cost feasibility of a 20 TeV superconducting collider facility. Based on magnets of 3T, 5T, and 6.5T the Main Ring of the Collider would have a circumference of 164 km, 113 km, or 90 km. There would be six collision regions, of which four would be developed intially. The 5T and 6.5T rings would have twelve major refrigeration stations, while the 3T design would have 24 major refrigeration stations.

  12. Graphene/CdTe heterostructure solar cell and its enhancement with photo-induced doping

    SciTech Connect

    Lin, Shisheng Chen, Hongsheng; Li, Xiaoqiang; Zhang, Shengjiao; Wang, Peng; Xu, Zhijuan; Zhong, Huikai; Wu, Zhiqian

    2015-11-09

    We report a type of solar cell based on graphene/CdTe Schottky heterostructure, which can be improved by surface engineering as graphene is atomic thin. By coating a layer of ultrathin CdSe quantum dots onto graphene/CdTe heterostructure, the power conversion efficiency is increased from 2.08% to 3.10%. Photo-induced doping is mainly accounted for this enhancement, as evidenced by field effect transport, Raman, photoluminescence, and quantum efficiency measurements. This work demonstrates a feasible way of improving the performance of graphene/semiconductor heterostructure solar cells by combining one dimensional with two dimensional materials.

  13. .sup.123m Te-Labeled biochemicals and method of preparation

    DOEpatents

    Knapp, Jr., Furn F.

    1980-01-01

    A novel class of .sup.123m Te-labeled steroids and amino acids is provided by the method of reacting a .sup.123m Te symmetric diorgano ditelluride with a hydride reducing agent and a source of alkali metal ions to form an alkali metal organo telluride. The alkali metal organo telluride is reacted with a primary halogenated steroidal side chain, amino acid, or amino acid precursor such as hydantoin. The novel compounds are useful as biological tracers and as organal imaging agents.

  14. High efficiency thin film CdTe and a-Si based solar cells

    SciTech Connect

    Compaan, A. D.; Deng, X.; Bohn, R. G.

    2000-01-04

    This report describes work done by the University of Toledo during the first year of this subcontract. During this time, the CdTe group constructed a second dual magnetron sputter deposition facility; optimized reactive sputtering for ZnTe:N films to achieve 10 ohm-cm resistivity and {approximately}9% efficiency cells with a copper-free ZnTe:N/Ni contact; identified Cu-related photoluminescence features and studied their correlation with cell performance including their dependence on temperature and E-fields; studied band-tail absorption in CdS{sub x}Te{sub 1{minus}x} films at 10 K and 300 K; collaborated with the National CdTe PV Team on (1) studies of high-resistivity tin oxide (HRT) layers from ITN Energy Systems, (2) fabrication of cells on the HRT layers with 0, 300, and 800-nm CdS, and (3) preparation of ZnTe:N-based contacts on First Solar materials for stress testing; and collaborated with Brooklyn College for ellipsometry studies of CdS{sub x}Te{sub 1{minus}x} alloy films, and with the University of Buffalo/Brookhaven NSLS for synchrotron X-ray fluorescence studies of interdiffusion in CdS/CdTe bilayers. The a-Si group established a baseline for fabricating a-Si-based solar cells with single, tandem, and triple-junction structures; fabricated a-Si/a-SiGe/a-SiGe triple-junction solar cells with an initial efficiency of 9.7% during the second quarter, and 10.6% during the fourth quarter (after 1166 hours of light-soaking under 1-sun light intensity at 50 C, the 10.6% solar cells stabilized at about 9%); fabricated wide-bandgap a-Si top cells, the highest Voc achieved for the single-junction top cell was 1.02 V, and top cells with high FF (up to 74%) were fabricated routinely; fabricated high-quality narrow-bandgap a-SiGe solar cells with 8.3% efficiency; found that bandgap-graded buffer layers improve the performance (Voc and FF) of the narrow-bandgap a-SiGe bottom cells; and found that a small amount of oxygen partial pressure ({approximately}2 {times} 10

  15. Passivation of an isoelectronic impurity by atomic hydrogen: The case of ZnTe:O

    SciTech Connect

    Felici, Marco; Polimeni, Antonio; Capizzi, Mario; Nabetani, Y.; Okuno, T.; Aoki, K.; Kato, T.; Matsumoto, T.; Hirai, T.

    2006-03-06

    We investigated the optical properties of ZnTe:O/GaAs before and after atomic hydrogen irradiation. Oxygen incorporation gives rise to energy levels associated with single O atoms, O-O pairs, and O clusters, and to a blueshift of the energy gap of the material with respect to that of pure ZnTe/GaAs. All of these effects disappear progressively after irradiation with H, which also leads to an increase in the tensile strain of the epilayer. These observations provide experimental evidence of H-induced passivation of an isoelectronic impurity in II-VI alloys.

  16. Charge transport properties of p-CdTe/n-CdTe/n{sup +}-Si diode-type nuclear radiation detectors based on metalorganic vapor-phase epitaxy-grown epilayers

    SciTech Connect

    Niraula, M.; Yasuda, K.; Wajima, Y.; Yamashita, H.; Tsukamoto, Y.; Suzuki, Y.; Matsumoto, M.; Takai, N.; Tsukamoto, Y.; Agata, Y.

    2013-10-28

    Charge transport properties of p-CdTe/n-CdTe/n{sup +}-Si diode-type nuclear radiation detectors, fabricated by growing p-and n-type CdTe epilayers on (211) n{sup +}-Si substrates using metalorganic vapor-phase epitaxy (MOVPE), were studied by analyzing current-voltage characteristics measured at various temperatures. The diode fabricated shows good rectification properties, however, both forward and reverse biased currents deviate from their ideal behavior. The forward current exhibits typical feature of multi-step tunneling at lower biases; however, becomes space charge limited type when the bias is increased. On the other hand, the reverse current exhibits thermally activated tunneling-type current. It was found that trapping centers at the p-CdTe/n-CdTe junction, which were formed due to the growth induced defects, determine the currents of this diode, and hence limit the performance of the nuclear radiation detectors developed.

  17. Study of W boson production in pPb collisions at sNN=5.02 TeV...

    Office of Scientific and Technical Information (OSTI)

    Study of W boson production in pPb collisions at sNN5.02 TeV Citation Details In-Document Search Title: Study of W boson production in pPb collisions at sNN5.02 TeV Publication...

  18. Cadmium sulfate and CdTe-quantum dots alter DNA repair in zebrafish (Danio rerio) liver cells

    SciTech Connect

    Tang, Song; Cai, Qingsong; Chibli, Hicham; Allagadda, Vinay; Nadeau, Jay L.; Mayer, Gregory D.

    2013-10-15

    Increasing use of quantum dots (QDs) makes it necessary to evaluate their toxicological impacts on aquatic organisms, since their contamination of surface water is inevitable. This study compares the genotoxic effects of ionic Cd versus CdTe nanocrystals in zebrafish hepatocytes. After 24 h of CdSO{sub 4} or CdTe QD exposure, zebrafish liver (ZFL) cells showed a decreased number of viable cells, an accumulation of Cd, an increased formation of reactive oxygen species (ROS), and an induction of DNA strand breaks. Measured levels of stress defense and DNA repair genes were elevated in both cases. However, removal of bulky DNA adducts by nucleotide excision repair (NER) was inhibited with CdSO{sub 4} but not with CdTe QDs. The adverse effects caused by acute exposure of CdTe QDs might be mediated through differing mechanisms than those resulting from ionic cadmium toxicity, and studying the effects of metallic components may be not enough to explain QD toxicities in aquatic organisms. - Highlights: • Both CdSO{sub 4} and CdTe QDs lead to cell death and Cd accumulation. • Both CdSO{sub 4} and CdTe QDs induce cellular ROS generation and DNA strand breaks. • Both CdSO{sub 4} and CdTe QDs induce the expressions of stress defense and DNA repair genes. • NER repair capacity was inhibited with CdSO{sub 4} but not with CdTe QDs.

  19. Sonochemical and hydrothermal synthesis of PbTe nanostructures with the aid of a novel capping agent

    SciTech Connect

    Fard-Fini, Shahla Ahmadian; Salavati-Niasari, Masoud; Mohandes, Fatemeh

    2013-10-15

    Graphical abstract: - Highlights: • PbTe nanostructures were prepared with the aid of Schiff-base compound. • Sonochemical and hydrothermal methods were employed to fabricate PbTe nanostrucrues. • The effect of preparation parameters on the morphology of PbTe was investigated. - Abstract: In this work, a new Schiff-base compound derived from 1,8-diamino-3,6-dioxaoctane and 2-hydroxy-1-naphthaldehyde marked as (2-HyNa)-(DaDo) was synthesized, characterized, and then used as capping agent for the preparation of PbTe nanostructures. To fabricate PbTe nanostructures, two different synthesis methods; hydrothermal and sonochemical routes, were applied. To further investigate, the effect of preparation parameters like reaction time and temperature in hydrothermal synthesis and sonication time in the presence of ultrasound irradiation on the morphology and purity of the final products was tested. The products were analyzed with the aid of SEM, TEM, XRD, FT-IR, and EDS. Based on the obtained results, it was found that pure cubic phased PbTe nanostructures have been obtained by hydrothermal and sonochemical approaches. Besides, SEM images showed that cubic-like and rod-like PbTe nanostructures have been formed by hydrothermal and sonochemical methods, respectively. Sonochemical synthesis of PbTe nanostructures was favorable, because the synthesis time of sonochemical method was shorter than that of hydrothermal method.

  20. Local-moment magnetism in superconducting FeTe0.35Se0.65 as seen...

    Office of Scientific and Technical Information (OSTI)

    Local-moment magnetism in superconducting FeTe0.35Se0.65 as seen via inelastic neutron scattering Prev Next Title: Local-moment magnetism in superconducting FeTe0.35Se0.65 as ...

  1. Modification of electron states in CdTe absorber due to a buffer layer in CdTe/CdS solar cells

    SciTech Connect

    Fedorenko, Y. G. Major, J. D.; Pressman, A.; Phillips, L. J.; Durose, K.

    2015-10-28

    By application of the ac admittance spectroscopy method, the defect state energy distributions were determined in CdTe incorporated in thin film solar cell structures concluded on ZnO, ZnSe, and ZnS buffer layers. Together with the Mott-Schottky analysis, the results revealed a strong modification of the defect density of states and the concentration of the uncompensated acceptors as influenced by the choice of the buffer layer. In the solar cells formed on ZnSe and ZnS, the Fermi level and the energy position of the dominant deep trap levels were observed to shift closer to the midgap of CdTe, suggesting the mid-gap states may act as recombination centers and impact the open-circuit voltage and the fill factor of the solar cells. For the deeper states, the broadening parameter was observed to increase, indicating fluctuations of the charge on a microscopic scale. Such changes can be attributed to the grain-boundary strain and the modification of the charge trapped at the grain-boundary interface states in polycrystalline CdTe.

  2. Effect of hydrostatic pressure and uniaxial strain on the electronic structure of Pb1-xSnxTe

    DOE PAGES [OSTI]

    Geilhufe, Matthias; Nayak, Sanjeev K.; Thomas, Stefan; Dane, Markus; Tripathi, Gouri S.; Entel, Peter; Hergert, Wolfram; Ernst, Arthur

    2015-12-09

    The electronic structure of Pb1–xSnxTe is studied by using the relativistic Korringa-Kohn-Rostoker Green function method in the framework of density functional theory. For all concentrations x, Pb1–xSnxTe is a direct semiconductor with a narrow band gap. In contrast to pure lead telluride, tin telluride shows an inverted band characteristic close to the Fermi energy. It will be shown that this particular property can be tuned, first, by alloying PbTe and SnTe and, second, by applying hydrostatic pressure or uniaxial strain. Furthermore, the magnitude of strain needed to switch between the regular and inverted band gap can be tuned by themore » alloy composition. In conclusion, there is a range of potential usage of Pb1–xSnxTe for spintronic applications.« less

  3. Synthesis, characterisation and thermoelectric properties of the oxytelluride Bi{sub 2}O{sub 2}Te

    SciTech Connect

    Luu, Son D.N.; Vaqueiro, Paz

    2015-03-15

    Bi{sub 2}O{sub 2}Te was synthesised from a stoichiometric mixture of Bi, Bi{sub 2}O{sub 3} and Te by a solid state reaction. Analysis of powder X-ray diffraction data indicates that this material crystallises in the anti-ThCr{sub 2}Si{sub 2} structure type (space group I4/mmm), with lattice parameters a=3.98025(4) and c=12.70391(16) Å. The electrical and thermal transport properties of Bi{sub 2}O{sub 2}Te were investigated as a function of temperature over the temperature range 300≤T (K)≤665. These measurements indicate that Bi{sub 2}O{sub 2}Te is an n-type semiconductor, with a band gap of 0.23 eV. The thermal conductivity of Bi{sub 2}O{sub 2}Te is remarkably low for a crystalline material, with a value of only 0.91 W m{sup −1} K{sup −1} at room temperature. - Graphical abstract: Bi{sub 2}O{sub 2}Te, which crystallises in the anti-ThCr{sub 2}Si{sub 2} structure type, is an n-type semiconductor with a remarkably low thermal conductivity. - Highlights: • Bi{sub 2}O{sub 2}Te crystallises in the anti-ThCr{sub 2}Si{sub 2} structure type. • Bi{sub 2}O{sub 2}Te is an n-type semiconductor, with a band gap of 0.23 eV. • The thermal conductivity of Bi{sub 2}O{sub 2}Te approaches values found for amorphous solids. • The thermoelectric figure of merit of undoped Bi{sub 2}O{sub 2}Te reaches 0.13 at 573 K.

  4. Project Reports for Te-Moak Tribe of Western Shoshone: Battle Mountain Colony- 2012 Project

    Energy.gov [DOE]

    The Feasibility Study for the Battle Mountain Renewable Energy Park project ("Feasibility Study") will assess the feasibility, benefits, and impacts of a 5-megawatt (MW) solar photovoltaic (PV) generating system (the "Solar Project" or "Energy Park") on the Te-Moak Tribe of Western Shoshone Indians of Nevada Battle Mountain Colony in Battle Mountain, Nevada.

  5. Te-Moak Tribe of Western Shoshone: Battle Mountain Colony- 2012 Project

    Energy.gov [DOE]

    The Feasibility Study for the Battle Mountain Renewable Energy Park project ("Feasibility Study") will assess the feasibility, benefits, and impacts of a 5-megawatt (MW) solar photovoltaic (PV) generating system (the "Solar Project" or "Energy Park") on the Te-Moak Tribe of Western Shoshone Indians of Nevada Battle Mountain Colony in Battle Mountain, Nevada.

  6. Low-temperature photoluminescence analysis of CdTeSe crystals for radiation-detector applications

    SciTech Connect

    YANG G.; Roy, U. N.; Bolotnikov, A. E.; Cui, Y.; Camarda, G.S.; Hossain, A.; and James, R. B.

    2015-10-05

    Goal: Understanding the changes of material defects in CdTeSe following annealing. Experimental results and discussions: Infrared (IR) transmission microscopy; current-voltage measurements (Highlight: Improvement of resistivity of un-doped crystals after annealing); low-temperature photoluminescence (PL) spectrum of as-grown and annealed samples.

  7. Computational discovery of ferromagnetic semiconducting single-layer CrSnTe3

    DOE PAGES [OSTI]

    Zhuang, Houlong L.; Xie, Yu; Kent, P. R. C.; Ganesh, P.

    2015-07-06

    Despite many single-layer materials being reported in the past decade, few of them exhibit magnetism. Here we perform first-principles calculations using accurate hybrid density functional methods (HSE06) to predict that single-layer CrSnTe3 (CST) is a ferromagnetic semiconductor, with band gaps of 0.9 and 1.2 eV for the majority and minority spin channels, respectively. We determine the Curie temperature as 170 K, significantly higher than that of single-layer CrSiTe3 (90K) and CrGeTe3 (130 K). This is due to the enhanced ionicity of the Sn-Te bond, which in turn increases the superexchange coupling between the magnetic Cr atoms. We further explore themore » mechanical and dynamical stability and strain response of this single-layer material for possible epitaxial growth. Lastly, our study provides an intuitive approach to understand and design novel single-layer magnetic semiconductors for a wide range of spintronics and energy applications.« less

  8. Resonance photoelectron spectroscopy of TiX{sub 2} (X = S, Se, Te) titanium dichalcogenides

    SciTech Connect

    Shkvarin, A. S. Yarmoshenko, Yu. M.; Skorikov, N. A.; Yablonskikh, M. V.; Merentsov, A. I.; Shkvarina, E. G.; Titov, A. N.

    2012-11-15

    The photoelectron valence band spectra of TiS{sub 2}, TiSe{sub 2}, and TiTe{sub 2} dichalcogenides are investigated in the Ti 2p-3d resonance regime. Resonance bands in the vicinity of the Fermi energy are found for TiS{sub 2} and TiTe{sub 2}. The nature of these bands is analyzed based on model calculations of the density of electronic states in TiS{sub 2}, TiSe{sub 2}, and TiTe{sub 2} compounds intercalated by titanium atoms. Analysis of experimental data and their comparison with model calculations showed that these bands have different origins. It is found that the resonance enhancement of an additional band observed in TiS{sub 2} is explained by self-intercalation by titanium during the synthesis of this compound. The resonance enhancement in TiTe{sub 2} is caused by occupation of the 3d band in Ti.

  9. Strong spin-lattice coupling in CrSiTe3

    SciTech Connect

    Casto, L. D.; Clune, A. J.; Yokosuk, M. O.; Musfeldt, J. L.; Williams, T. J.; Zhuang, H. L.; Lin, M. -W.; Xiao, K.; Hennig, R. G.; Sales, B. C.; Yan, J. -Q.; Mandrus, D.

    2015-03-19

    CrSiTe3 has attracted recent interest as a candidate single-layer ferromagnetic semiconductor, but relatively little is known about the bulk properties of this material. Here, we report single-crystal X-ray diffraction, magnetic properties, thermal conductivity, vibrational, and optical spectroscopies and compare our findings with complementary electronic structure and lattice dynamics principles calculations. The high temperature paramagnetic phase is characterized by strong spin-lattice interactions that give rise to glassy behavior, negative thermal expansion, and an optical response that reveals that CrSiTe3 is an indirect gap semiconductor with indirect and direct band gaps at 0.4 and 1.2 eV, respectively. Measurements of the phonons across the 33 K ferromagnetic transition provide additional evidence for strong coupling between the magnetic and lattice degrees of freedom. In conclusion, the Si-Te stretching and Te displacement modes are sensitive to the magnetic ordering transition, a finding that we discuss in terms of the superexchange mechanism. Lastly, spin-lattice coupling constants are also extracted.

  10. Strong spin-lattice coupling in CrSiTe3

    DOE PAGES [OSTI]

    Casto, L. D.; Clune, A. J.; Yokosuk, M. O.; Musfeldt, J. L.; Williams, T. J.; Zhuang, H. L.; Lin, M. -W.; Xiao, K.; Hennig, R. G.; Sales, B. C.; et al

    2015-03-19

    CrSiTe3 has attracted recent interest as a candidate single-layer ferromagnetic semiconductor, but relatively little is known about the bulk properties of this material. Here, we report single-crystal X-ray diffraction, magnetic properties, thermal conductivity, vibrational, and optical spectroscopies and compare our findings with complementary electronic structure and lattice dynamics principles calculations. The high temperature paramagnetic phase is characterized by strong spin-lattice interactions that give rise to glassy behavior, negative thermal expansion, and an optical response that reveals that CrSiTe3 is an indirect gap semiconductor with indirect and direct band gaps at 0.4 and 1.2 eV, respectively. Measurements of the phonons acrossmore » the 33 K ferromagnetic transition provide additional evidence for strong coupling between the magnetic and lattice degrees of freedom. In conclusion, the Si-Te stretching and Te displacement modes are sensitive to the magnetic ordering transition, a finding that we discuss in terms of the superexchange mechanism. Lastly, spin-lattice coupling constants are also extracted.« less

  11. Rashba effect in single-layer antimony telluroiodide SbTeI

    DOE PAGES [OSTI]

    Zhuang, Houlong L.; Cooper, Valentino R.; Xu, Haixuan; Ganesh, P.; Hennig, Richard G.; Kent, P. R. C.

    2015-09-04

    Exploring spin-orbit coupling (SOC) in single-layer materials is important for potential spintronics applications. In this paper, using first-principles calculations, we show that single-layer antimony telluroiodide SbTeI behaves as a two-dimensional semiconductor exhibiting a G0W0 band gap of 1.82 eV. More importantly, we observe the Rashba spin splitting in the SOC band structure of single-layer SbTeI with a sizable Rashba coupling parameter of 1.39 eV Å, which is significantly larger than that of a number of two-dimensional systems including surfaces and interfaces. The low formation energy and real phonon modes of single-layer SbTeI imply that it is stable. Finally, our studymore » suggests that single-layer SbTeI is a candidate single-layer material for applications in spintronics devices.« less

  12. Comparison of Minority Carrier Lifetime Measurements in Superstrate and Substrate CdTe PV Devices: Preprint

    SciTech Connect

    Gessert, T. A.; Dhere, R. G.; Duenow, J. N.; Kuciauskas, D.; Kanevce, A.; Bergeson, J. D.

    2011-07-01

    We discuss typical and alternative procedures to analyze time-resolved photoluminescence (TRPL) measurements of minority carrier lifetime (MCL) with the hope of enhancing our understanding of how this technique may be used to better analyze CdTe photovoltaic (PV) device functionality. Historically, TRPL measurements of the fast recombination rate (t1) have provided insightful correlation with broad device functionality. However, we have more recently found that t1 does not correlate as well with smaller changes in device performance, nor does it correlate well with performance differences observed between superstrate and substrate CdTe PV devices. This study presents TRPL data for both superstrate and substrate CdTe devices where both t1 and the slower TRPL decay (t2) are analyzed. The study shows that changes in performance expected from small changes in device processing may correlate better with t2. Numerical modeling further suggests that, for devices that are expected to have similar drift field in the depletion region, effects of changes in bulk MCL and interface recombination should be more pronounced in t2. Although this technique may provide future guidance to improving CdS/CdTe device performance, it is often difficult to extract statistically precise values for t2, and therefore t2 data may demonstrate significant scatter when correlated with performance parameters.

  13. Investigation of deep level defects in CdTe thin films

    SciTech Connect

    Shankar, H.; Castaldini, A.; Dauksta, E.; Medvid, A.; Cavallini, A.

    2014-02-21

    In the past few years, a large body of work has been dedicated to CdTe thin film semiconductors, as the electronic and optical properties of CdTe nanostructures make them desirable for photovoltaic applications. The performance of semiconductor devices is greatly influenced by the deep levels. Knowledge of parameters of deep levels present in as-grown materials and the identification of their origin is the key factor in the development of photovoltaic device performance. Photo Induced Current Transient Spectroscopy technique (PICTS) has proven to be a very powerful method for the study of deep levels enabling us to identify the type of traps, their activation energy and apparent capture cross section. In the present work, we report the effect of growth parameters and LASER irradiation intensity on the photo-electric and transport properties of CdTe thin films prepared by Close-Space Sublimation method using SiC electrical heating element. CdTe thin films were grown at three different source temperatures (630, 650 and 700 C). The grown films were irradiated with Nd:YAG LASER and characterized by Photo-Induced Current Transient Spectroscopy, Photocurrent measurementand Current Voltage measurements. The defect levels are found to be significantly influenced by the growth temperature.

  14. Nanowire CdS-CdTe solar cells with molybdenum oxide as contact

    SciTech Connect

    Dang, Hongmei; Singh, Vijay P.

    2015-10-06

    Using a 10 nm thick molybdenum oxide (MoO3-x) layer as a transparent and low barrier contact to p-CdTe, we demonstrate nanowire CdS-CdTe solar cells with a power conversion efficiency of 11% under front side illumination. Annealing the as-deposited MoO3 film in N2 resulted in a reduction of the cell’s series resistance, from 9.97 Ω/cm2 to 7.69 Ω/cm2, and increase in efficiency from 9.9% to 11%. Under illumination from the back, the MoO3-x/Au side, the nanowire solar cells yielded Jsc of 21 mA/cm2 and efficiency of 8.67%. Our results demonstrate use of a thin layer transition metal oxide as a potential way for a transparent back contact to nanowire CdS-CdTe solar cells. As a result, this work has implications toward enabling a novel superstrate structure nanowire CdS-CdTe solar cell on Al foil substrate by a low cost roll-to roll fabrication process.

  15. Nanowire CdS-CdTe solar cells with molybdenum oxide as contact

    DOE PAGES [OSTI]

    Dang, Hongmei; Singh, Vijay P.

    2015-10-06

    Using a 10 nm thick molybdenum oxide (MoO3-x) layer as a transparent and low barrier contact to p-CdTe, we demonstrate nanowire CdS-CdTe solar cells with a power conversion efficiency of 11% under front side illumination. Annealing the as-deposited MoO3 film in N2 resulted in a reduction of the cell’s series resistance, from 9.97 Ω/cm2 to 7.69 Ω/cm2, and increase in efficiency from 9.9% to 11%. Under illumination from the back, the MoO3-x/Au side, the nanowire solar cells yielded Jsc of 21 mA/cm2 and efficiency of 8.67%. Our results demonstrate use of a thin layer transition metal oxide as a potentialmore » way for a transparent back contact to nanowire CdS-CdTe solar cells. As a result, this work has implications toward enabling a novel superstrate structure nanowire CdS-CdTe solar cell on Al foil substrate by a low cost roll-to roll fabrication process.« less

  16. Relic neutralino surface at a 100 TeV collider

    SciTech Connect

    Bramante, Joseph; Fox, Patrick J.; Martin, Adam; Ostdiek, Bryan; Plehn, Tilman; Schell, Torben; Takeuchi, Michihisa

    2015-03-11

    We map the parameter space for minimal supersymmetric Standard Model neutralino dark matter which freezes out to the observed relic abundance, in the limit that all superpartners except the neutralinos and charginos are decoupled. In this space of relic neutralinos, we show the dominant dark matter annihilation modes, the mass splittings among the electroweakinos, direct detection rates, and collider cross sections. The mass difference between the dark matter and the next-to-lightest neutral and charged states is typically much less than electroweak gauge boson masses. With these small mass differences, the relic neutralino surface is accessible to a future 100 TeV hadron collider, which can discover interneutralino mass splittings down to 1 GeV and thermal relic dark matter neutralino masses up to 1.5 TeV with a few inverse attobarns of luminosity. This coverage is a direct consequence of the increased collider energy: in the Standard Model events with missing transverse momentum in the TeV range have mostly hard electroweak radiation, distinct from the soft radiation shed in compressed electroweakino decays. As a result, we exploit this kinematic feature in final states including photons and leptons, tailored to the 100 TeV collider environment.

  17. In-situ crystallization of GeTe\\GaSb phase change memory stacked films

    SciTech Connect

    Velea, A.; Borca, C. N.; Grolimund, D.; Socol, G.; Galca, A. C.; Popescu, M.; Bokhoven, J. A. van

    2014-12-21

    Single and double layer phase change memory structures based on GeTe and GaSb thin films were deposited by pulsed laser deposition (PLD). Their crystallization behavior was studied using in-situ synchrotron techniques. Electrical resistance vs. temperature investigations, using the four points probe method, showed transition temperatures of 138 °C and 198 °C for GeTe and GaSb single films, respectively. It was found that after GeTe crystallization in the stacked films, Ga atoms from the GaSb layer diffused in the vacancies of the GeTe crystalline structure. Therefore, the crystallization temperature of the Sb-rich GaSb layer is decreased by more than 30 °C. Furthermore, at 210 °C, the antimony excess from GaSb films crystallizes as a secondary phase. At higher annealing temperatures, the crystalline Sb phase increased on the expense of GaSb crystalline phase which was reduced. Extended X-ray absorption fine structure (EXAFS) measurements at the Ga and Ge K-edges revealed changes in their local atomic environments as a function of the annealing temperature. Simulations unveil a tetrahedral configuration in the amorphous state and octahedral configuration in the crystalline state for Ge atoms, while Ga is four-fold coordinated in both as-deposited and annealed samples.

  18. Higgs Coupling Measurements at a 1 TeV Linear Collider

    SciTech Connect

    Barklow, T

    2003-12-18

    Methods for extracting Higgs boson signals at a 1 TeV center-of-mass energy e{sup +}e{sup -} linear collider are described. In addition, estimates are given for the accuracy with which branching fractions can be measured for Higgs boson decays to b{bar b} WW, gg, and {gamma}{gamma}.

  19. Nuclear structure relevant to neutrinoless double beta decay candidate {sup 130}Te and other recent results

    SciTech Connect

    Kay, B. P. [Physics Division, Argonne National Laboratory, Illinois 60439 (United States)

    2013-12-30

    We have undertaken a series of single-nucleon and pair transfer reaction measurements to help constrain calculations of the nuclear matrix elements for neutrinoless double beta decay. In this talk, a short overview of measurements relevant to the {sup 130}Te?{sup 130}Xe system is given. Brief mention is made of other recent and forthcoming results.

  20. Relic neutralino surface at a 100 TeV collider

    DOE PAGES [OSTI]

    Bramante, Joseph; Fox, Patrick J.; Martin, Adam; Ostdiek, Bryan; Plehn, Tilman; Schell, Torben; Takeuchi, Michihisa

    2015-03-11

    We map the parameter space for minimal supersymmetric Standard Model neutralino dark matter which freezes out to the observed relic abundance, in the limit that all superpartners except the neutralinos and charginos are decoupled. In this space of relic neutralinos, we show the dominant dark matter annihilation modes, the mass splittings among the electroweakinos, direct detection rates, and collider cross sections. The mass difference between the dark matter and the next-to-lightest neutral and charged states is typically much less than electroweak gauge boson masses. With these small mass differences, the relic neutralino surface is accessible to a future 100 TeVmore » hadron collider, which can discover interneutralino mass splittings down to 1 GeV and thermal relic dark matter neutralino masses up to 1.5 TeV with a few inverse attobarns of luminosity. This coverage is a direct consequence of the increased collider energy: in the Standard Model events with missing transverse momentum in the TeV range have mostly hard electroweak radiation, distinct from the soft radiation shed in compressed electroweakino decays. As a result, we exploit this kinematic feature in final states including photons and leptons, tailored to the 100 TeV collider environment.« less

  1. Shape-controlled narrow-gap SnTe nanostructures: From nanocubes to nanorods and nanowires

    DOE PAGES [OSTI]

    Guo, Shaojun; Andrew F. Fidler; He, Kai; Su, Dong; Chen, Gen; Lin, Qianglu; Pietryga, Jeffrey M.; Klimov, Victor I.

    2015-11-06

    In this study, the rational design and synthesis of narrow-gap colloidal semiconductor nanocrystals (NCs) is an important step toward the next generation of solution-processable photovoltaics, photodetectors, and thermoelectric devices. SnTe NCs are particularly attractive as a Pb-free alternative to NCs of narrow-gap lead chalcogenides. Previous synthetic efforts on SnTe NCs have focused on spherical nanoparticles. Here we report new strategies for synthesis of SnTe NCs with shapes tunable from highly monodisperse nanocubes, to nanorods (NRs) with variable aspect ratios, and finally to long, straight nanowires (NWs). Reaction at high temperature quickly forms thermodynamically favored nanocubes, but low temperatures lead tomore » elongated particles. Transmission electron microscopy studies of reaction products at various stages of the synthesis reveal that the growth and shape-focusing of monodisperse SnTe nanocubes likely involves interparticle ripening, while directional growth of NRs and NWs may be initiated by particle dimerization via oriented attachment.« less

  2. Signals of a 2 TeV $W'$ boson and a heavier $Z'$ boson

    SciTech Connect

    Dobrescu, Bogdan A.; Fox, Patrick J.

    2015-11-05

    We construct an SU(2)L x SU(2)R x U(1)B-L model with a Higgs sector that consists of a bidoublet and a doublet, and with a right-handed neutrino sector that includes one Dirac fermion and one Majorana fermion. This model explains the CMS and ATLAS excess events in the e+e-jj, jj, Wh0 and WZ channels in terms of a W' boson of mass near 1.9 TeV and of coupling gR in the 0.4-0.5 range (with the lower half preferred by the limits on tb- resonances). We found that the production cross section of this W' boson at the 13 TeV LHC is in the 720-1100 fb range, allowing sensitivity in more than 17 final states. Furthermore, we determine that the Z' boson has a mass in the 2.9-4.5 TeV range and several decay channels that can be probed in Run 2 of the LHC, including cascade decays via heavy Higgs bosons. Interpreting the CMS e+e-event at 2.9 TeV as coming from the Z', the mass ratio of the Z' and W' bosons requires gR ≈0.48, which implies a pp →Z' → ℓ+-cross section of 2 fb at √s = 13 TeV.

  3. Galvanomagnetic properties and electronic structure of iron-doped PbTe

    SciTech Connect

    Skipetrov, E. P.; Kruleveckaya, O. V.; Skipetrova, L. A.; Knotko, A. V.; Slynko, E. I.; Slynko, V. E.

    2015-11-21

    We synthesize an iron-doped PbTe single-crystal ingot and investigate the phase composition and distribution of the iron impurity along the ingot as well as galvanomagnetic properties in weak magnetic fields (4.2 K ≤ T ≤ 300 K, B ≤ 0.07 T) of Pb{sub 1−y}Fe{sub y}Te alloys. We find microscopic inclusions enriched with iron and regions with a chemical composition close to FeTe in the heavily doped samples, while the iron impurity content in the main phase rises only slightly along the length of the ingot reaching the impurity solubility limit at approximately 0.6 mol. %. Samples from the initial and the middle parts of the ingot are characterized by p-type metal conductivity. An increase of the iron impurity content leads to a decrease in the free hole concentration and to a stabilization of galvanomagnetic parameters due to the pinning of the Fermi level by the iron resonant impurity level E{sub Fe} lying under the bottom of the valence band (E{sub v} − E{sub Fe} ≈ 16 meV). In the samples from the end of the ingot, a p-n inversion of the conductivity type and an increase of the free electron concentration along the ingot are revealed despite the impurity solubility limit being reached. The kinetics of changes of charge carrier concentration and of the Fermi energy along the ingot is analyzed in the framework of the six-band Dimmock dispersion relation. A model is proposed for the electronic structure rearrangement of Pb{sub 1−y}Fe{sub y}Te with doping, which may also be used for PbTe doped with other transition metals.

  4. Impact of annealing on the chemical structure and morphology of the thin-film CdTe/ZnO interface

    SciTech Connect

    Horsley, K. Hanks, D. A.; Weir, M. G.; Beal, R. J.; Wilks, R. G.; Blum, M.; Häming, M.; Hofmann, T.; Weinhardt, L.; and others

    2014-07-14

    To enable an understanding and optimization of the optoelectronic behavior of CdTe-ZnO nanocomposites, the morphological and chemical properties of annealed CdTe/ZnO interface structures were studied. For that purpose, CdTe layers of varying thickness (4–24 nm) were sputter-deposited on 100 nm-thick ZnO films on surface-oxidized Si(100) substrates. The morphological and chemical effects of annealing at 525 °C were investigated using X-ray Photoelectron Spectroscopy (XPS), X-ray-excited Auger electron spectroscopy, energy dispersive X-ray spectroscopy, scanning electron microscopy, and atomic force microscopy. We find a decrease of the Cd and Te surface concentration after annealing, parallel to an increase in Zn and O signals. While the as-deposited film surfaces show small grains (100 nm diameter) of CdTe on the ZnO surface, annealing induces a significant growth of these grains and separation into islands (with diameters as large as 1 μm). The compositional change at the surface is more pronounced for Cd than for Te, as evidenced using component peak fitting of the Cd and Te 3d XPS peaks. The modified Auger parameters of Cd and Te are also calculated to further elucidate the local chemical environment before and after annealing. Together, these results suggest the formation of tellurium and cadmium oxide species at the CdTe/ZnO interface upon annealing, which can create a barrier for charge carrier transport, and might allow for a deliberate modification of interface properties with suitably chosen thermal treatment parameters.

  5. Surfactant-Free Synthesis of Bi2Te3-Te Micro-Nano Heterostructure with Enhanced Thermoelectric Figure of Merit

    SciTech Connect

    Zhang, Yichi; Wang, Heng; Kraemer, Stephan; Shi, Yifeng; Zhang, Fan; Snedaker, Matt; Ding, Kunlun; Moskovits, Martin; Snyder, G. Jeffrey; Stucky, Galen D.

    2011-03-21

    An ideal thermoelectric material would be a semiconductor with high electrical conductivity and relatively low thermal conductivity: an “electron crystal, phonon glass”. Introducing nanoscale heterostructures into the bulk TE matrix is one way of achieving this intuitively anomalous electron/phonon transport behavior. The heterostructured interfaces are expected to play a significant role in phonon scattering to reduce thermal conductivity and in the energy-dependent scattering of electrical carriers to improve the Seebeck coefficient. A nanoparticle building block assembly approach is plausible to fabricate three-dimensional heterostructured materials on a bulk commercial scale. However, a key problem in applying this strategy is the possible negative impact on TE performance of organic residue from the nanoparticle capping ligands. Herein, we report a wet chemical, surfactant-free, low-temperature, and easily up-scalable strategy for the synthesis of nanoscale heterophase Bi₂Te₃-Te via a galvanic replacement reaction. The micro-nano heterostructured material is fabricated bottom-up, by mixing the heterophase with commercial Bi₂Te₃. This unique structure shows an enhanced zT value of ~0.4 at room temperature. This heterostructure has one of the highest figures of merit among bismuth telluride systems yet achieved by a wet chemical bottom-up assembly. In addition, it shows a 40% enhancement of the figure of merit over our lab-made material without nanoscale heterostructures. This enhancement is mainly due to the decrease in the thermal conductivity while maintaining the power factor. Overall, this cost-efficient and room-temperature synthesis methodology provides the potential for further improvement and large-scale thermoelectric applications.

  6. Search for contact interactions in dimuon events from pp collisions at ?s=7 TeV with the ATLAS detector

    DOE PAGES [OSTI]

    Aad, G.; Abbott, B.; Abdallah, J.; Abdelalim, A. A.; Abdesselam, A.; Abdinov, O.; Abi, B.; Abolins, M.; Abramowicz, H.; Abreu, H.; et al

    2011-07-01

    A search for contact interactions has been performed using dimuon events recorded with the ATLAS detector in proton-proton collisions at ?s=7 TeV. The data sample corresponds to an integrated luminosity of 42 pb?. No significant deviation from the standard model is observed in the dimuon mass spectrum, allowing the following 95% C.L. limits to be set on the energy scale of contact interactions: ?>4.9 TeV (4.5 TeV) for constructive (destructive) interference in the left-left isoscalar compositeness model. These limits are the most stringent to date for ??qq contact interactions.

  7. Role of chalcogen vapor annealing in inducing bulk superconductivity in Fe1+yTe1-xSex [How does annealing in chalcogen vapor induce superconductivity in Fe1+yTe-xSex?

    DOE PAGES [OSTI]

    Lin, Wenzhi; Ganesh, P.; Gianfrancesco, Anthony; Wang, Jun; Berlijn, Tom; Maier, Thomas A.; Kalinin, Sergei V.; Sales, Brian C.; Pan, Minghu

    2015-02-01

    Recent investigations have shown that Fe1+yTe1-xSex can be made superconducting by annealing it in Se and O vapors. The current lore is that these chalcogen vapors induce superconductivity by removing the magnetic excess Fe atoms. To investigate this phenomenon we performed a combination of magnetic susceptibility, specific heat and transport measurements together with scanning tunneling microscopy and spectroscopy and density functional theory calculations on Fe1+yTe1-xSex treated with Te vapor. We conclude that the main role of the Te vapor is to quench the magnetic moments of the excess Fe atoms by forming FeTem (m ≥ 1) complexes. We show thatmore » the remaining FeTem complexes are still damaging to the superconductivity and therefore that their removal potentially could further improve superconductive properties in these compounds.« less

  8. Cooling effect of nanoscale Bi2Te3/Sb2Te3 multilayered thermoelectric thin films

    SciTech Connect

    Hines, Mardecial; Lenhardt, Joshua; Lu, Ming; Jiang, Li; Xiao, Zhigang

    2012-01-01

    Managing high heat flux is one of the greatest technical challenges the integrated circuit (IC) industry is facing because the rising temperature limits device minimization and decreases its lifetime. In this paper, we report the characterization of the cooling effect of nanoscale Bi2Te3/Sb2Te3 multilayered thin films. The multilayerthin film was prepared with e-beam evaporation, and had 21 layers (5-nm-thick each layer and 105-nm-thick total). A thermoelectric device of the multilayerfilm, which is sandwiched between a diode temperature sensor and a platinum temperature sensor, was fabricated to measure the cooling effect. A maximum cooling temperature difference of about 3K was obtained from the film at an applied dc electrical current of 5 mA. The nanoscale multilayerfilm could be integrated in the IC devices for the application of high-efficiency thermoelectric solid-state cooling.

  9. The High-Resolution Lightweight Telescope for the EUV (HiLiTE)

    SciTech Connect

    Martinez-Galarce, D S; Boerner, P; Soufli, R; De Pontieu, B; Katz, N; Title, A; Gullikson, E M; Robinson, J C; Baker, S L

    2008-06-02

    The High-resolution Lightweight Telescope for the EUV (HiLiTE) is a Cassegrain telescope that will be made entirely of Silicon Carbide (SiC), optical substrates and metering structure alike. Using multilayer coatings, this instrument will be tuned to operate at the 465 {angstrom} Ne VII emission line, formed in solar transition region plasma at {approx}500,000 K. HiLiTE will have an aperture of 30 cm, angular resolution of {approx}0.2 arc seconds and operate at a cadence of {approx}5 seconds or less, having a mass that is about 1/4 that of one of the 20 cm aperture telescopes on the Atmospheric Imaging Assembly (AIA) instrument aboard NASA's Solar Dynamics Observatory (SDO). This new instrument technology thus serves as a path finder to a post-AIA, Explorer-class missions.

  10. Diffusion-Reaction Modeling of Cu Migration in CdTe Solar Devices

    SciTech Connect

    Guo, Da; Brinkman, Daniel; Fang, Tian; Akis, Richard; Sankin, Igor; Vasileska, Dragica; Ringhofer, Christian

    2015-09-04

    In this work, we report on development of one-dimensional (1D) finite-difference and two-dimensional (2D) finite-element diffusion-reaction simulators to investigate mechanisms behind Cu-related metastabilities observed in CdTe solar cells [1]. The evolution of CdTe solar cells performance has been studied as a function of stress time in response to the evolution of associated acceptor and donor states. To achieve such capability, the simu-lators solve reaction-diffusion equations for the defect states in time-space domain self-consistently with the free carrier transport. Re-sults of 1-D and 2-D simulations have been compared to verify the accuracy of solutions.

  11. Thermoelectric properties of polycrystalline In4Se3 and In4Te3

    SciTech Connect

    Shi, Xun; Cho, Jung Y; Salvador, James R.; Yang, Jihui; Wang, Hsin

    2010-01-01

    High thermoelectric performance of a single crystal layered compound In{sub 4}Se{sub 3} was reported recently. We present here an electrical and thermal transport property study over a wide temperature range for polycrystalline samples of In{sub 4}Se{sub 3} and In{sub 4}Te{sub 3}. Our data demonstrate that these materials are lightly doped semiconductors, leading to large thermopower and resistivity. Very low thermal conductivity, below 1 W/m K, is observed. The power factors for In{sub 4}Se{sub 3} and In{sub 4}Te{sub 3} are much smaller when compared with state-of-the-art thermoelectric materials. This combined with the very low thermal conductivity results in the maximum ZT value of less than 0.6 at 700 K for In{sub 4}Se{sub 3}.

  12. Influence of deep level defects on carrier lifetime in CdZnTe:In

    SciTech Connect

    Guo, Rongrong; Jie, Wanqi Wang, Ning; Zha, Gangqiang; Xu, Yadong; Wang, Tao; Fu, Xu

    2015-03-07

    The defect levels and carrier lifetime in CdZnTe:In crystal were characterized with photoluminescence, thermally stimulated current measurements, as well as contactless microwave photoconductivity decay (MWPCD) technique. An evaluation equation to extract the recombination lifetime and the reemission time from MWPCD signal is developed based on Hornbeck-Haynes trapping model. An excellent agreement between defect level distribution and carrier reemission time in MWPCD signal reveals the tail of the photoconductivity decay is controlled by the defect level reemission effect. Combining {sup 241}Am gamma ray radiation response measurement and laser beam induced transient current measurement, it predicted that defect level with the reemission time shorter than the collection time could lead to better charge collection efficiency of CdZnTe detector.

  13. Fabrication of fluorescent composite with ultrafast aqueous synthesized high luminescent CdTe quantum dots

    SciTech Connect

    Zhang, Lei, E-mail: mejswu@ust.hk; Chen, Haibin, E-mail: mejswu@ust.hk, E-mail: mejswu@ust.hk; Wu, Jingshen, E-mail: mejswu@ust.hk, E-mail: mejswu@ust.hk [Department of Mechanical and Aerospace Engineering, The Hong Kong University of Science and Technology, Hong Kong and Fok Ying Tung Graduate School, The Hong Kong University of Science and Technology (Hong Kong); Bi, Xianghong, E-mail: takubatch@gmail.com [Fok Ying Tung Graduate School, The Hong Kong University of Science and Technology (Hong Kong)

    2014-05-15

    Without precursor preparation, inert gas protection and enormous amount of additives and reductants, CdTe quantum dots (QDs) can be rapidly synthesized with high quality. A 600 nm photoluminescence peak wavelength could be obtained within 1 hour's refluxing through minimal addition of 1,2-diaminoethane (DAE). The theoretical design for the experiments are illustrated and further proved by the characterization results with different concentrations and reagents. On the other hand, generation of CdTe QDs was found even under room temperature by applying droplet quantity of DAE. This indicates that QDs can be synthesized with simply a bottle and no enormous additives required. The QDs were mixed into the epoxy matrix through solution casting method with cetyltrimethylammonium (CTA) capping for phase transfer. The acquired epoxy based nanocomposite exhibits good transparency, compatibility and fluorescence.

  14. Higgs mass from compositeness at a multi-TeV scale

    DOE PAGES [OSTI]

    Cheng, Hsin -Chia; Dobrescu, Bogdan A.; Gu, Jiayin

    2014-08-18

    Within composite Higgs models based on the top seesaw mechanism, we show that the Higgs field can arise as the pseudo Nambu-Goldstone boson of the broken U(3)more » $$_{L}$$ chiral symmetry associated with a vector-like quark and the t-b doublet. As a result, the lightest CP-even neutral state of the composite scalar sector is lighter than the top quark, and can be identified as the newly discovered Higgs boson. As a result, constraints on weak-isospin violation push the chiral symmetry breaking scale above a few TeV, implying that other composite scalars are probably too heavy to be probed at the LHC, but may be within reach at a future hadron collider with center-of-mass energy of about 100 TeV.« less

  15. Search for Dijet Resonances in 7 TeV pp Collisions at CMS

    SciTech Connect

    Khachatryan, V.; et al.

    2010-11-01

    A search for narrow resonances in the dijet mass spectrum is performed using data corresponding to an integrated luminosity of 2.9 inverse pb collected by the CMS experiment at the LHC. Upper limits at the 95% confidence level (CL) are presented on the product of the resonance cross section, branching fraction into dijets, and acceptance, separately for decays into quark-quark, quark-gluon, or gluon-gluon pairs. The data exclude new particles predicted in the following models at the 95% CL: string resonances, with mass less than 2.50 TeV, excited quarks, with mass less than 1.58 TeV, and axigluons, colorons, and E_6 diquarks, in specific mass intervals. This extends previously published limits on these models.

  16. Anti pp searches for quark-gluon plasma at TeV I

    SciTech Connect

    Turkot, F.

    1986-06-01

    Three experiments that have been approved to run at TeV I are discussed from the viewpoint of their capability to search for evidence of the QCD phase transition in proton-antiproton collisions at 1.6 TeV. One of these experiments, E-735, was proposed as a dedicated search for quark-gluon plasma effects with a detector designed to study large total E/sub T/, low P/sub T/ individual particles. The other two, E-741 (CDF) and E-740 (DO), embody general purpose four-pi detectors designed primarily to study the physics of W and Z bosons and other large P/sub T/ phenomena. The detectors and their quark-gluon plasma signals are compared. 8 refs., 6 figs., 4 tabs. (LEW)

  17. Broadening of optical transitions in polycrystalline CdS and CdTe thin films

    SciTech Connect

    Li Jian; Chen Jie; Collins, R. W.

    2010-11-01

    The dielectric functions {epsilon} of polycrystalline CdS and CdTe thin films sputter deposited onto Si wafers were measured from 0.75 to 6.5 eV by in situ spectroscopic ellipsometry. Differences in {epsilon} due to processing variations are well understood using an excited carrier scattering model. For each sample, a carrier mean free path {lambda} is defined that is found to be inversely proportional to the broadening of each of the band structure critical points (CPs) deduced from {epsilon}. The rate at which broadening occurs with {lambda}{sup -1} is different for each CP, enabling a carrier group speed {upsilon}{sub g} to be identified for the CP. With the database for {upsilon}{sub g}, {epsilon} can be analyzed to evaluate the quality of materials used in CdS/CdTe photovoltaic heterojunctions.

  18. Right-Handed Neutrinos and the 2 TeV $W'$ Boson

    SciTech Connect

    Coloma, Pilar; Dobrescu, Bogdan A.; Lopez-Pavon, Jacobo

    2015-12-30

    The CMS e+e-jj events of invariant mass near 2 TeV are consistent with a W' boson decaying into an electron and a right-handed neutrino whose TeV-scale mass is of the Dirac type. We show that the Dirac partner of the right-handed electron-neutrino can be the right-handed tau-neutrino. Furthermore, a prediction of this model is that the sum of the τ+e+jj and τ-e-jj signal cross sections equals twice that for e+e-jj. The Standard Model neutrinos acquire Majorana masses and mixings compatible with neutrino oscillation data.

  19. Photoluminescence Imaging of Large-Grain CdTe for Grain Boundary Characterization

    SciTech Connect

    Johnston, Steve; Allende Motz, Alyssa; Reese, Matthew O.; Burst, James M.; Metzger, Wyatt K.

    2015-06-14

    In this work, we use photoluminescence (PL) imaging to characterize CdTe grain boundary recombination. We use a silicon megapixel camera and green (532 nm) laser diodes for excitation. A microscope objective lens system is used for high spatial resolution and a field of view down to 190 um x 190 um. PL images of large-grain (5 to 50 um) CdTe samples show grain boundary and grain interior features that vary with processing conditions. PL images of samples in the as-deposited state show distinct dark grain boundaries that suggest high excess carrier recombination. A CdCl2 treatment leads to PL images with very little distinction at the grain boundaries, which illustrates the grain boundary passivation properties. Other process conditions are also shown, along with comparisons of PL images to high spatial resolution time-resolved PL carrier lifetime maps.

  20. Photoluminescence studies of type-II CdSe/CdTe superlattices

    SciTech Connect

    Li Jingjing; Johnson, Shane R.; Wang Shumin; Ding Ding; Ning Cunzheng; Zhang Yonghang; Yin Leijun; Skromme, B. J.; Liu Xinyu; Furdyna, Jacek K.

    2012-08-06

    CdSe/CdTe type-II superlattices grown on GaSb substrates by molecular beam epitaxy are studied using time-resolved and steady-state photoluminescence (PL) spectroscopy at 10 K. The relatively long carrier lifetime of 188 ns observed in time-resolved PL measurements shows good material quality. The steady-state PL peak position exhibits a blue shift with increasing excess carrier concentration. Self-consistent solutions of the Schroedinger and Poisson equations show that this effect can be explained by band bending as a result of the spatial separation of electrons and holes, which is critical confirmation of a strong type-II band edge alignment between CdSe and CdTe.

  1. Electronic tuning of the transport properties of off-stoichiometric Pb{sub x}Sn{sub 1−x}Te thermoelectric alloys by Bi{sub 2}Te{sub 3} doping

    SciTech Connect

    Guttmann, Gilad M.; Dadon, David; Gelbstein, Yaniv

    2015-08-14

    The recent energy demands affected by the dilution of conventional energy resources and the growing awareness of environmental considerations had motivated many researchers to seek for novel renewable energy conversion methods. Thermoelectric direct conversion of thermal into electrical energies is such a method, in which common compositions include IV-VI semiconducting compounds (e.g., PbTe and SnTe) and their alloys. For approaching practical thermoelectric devices, the current research is focused on electronic optimization of off-stoichiometric p-type Pb{sub x}Sn{sub 1−x}Te alloys by tuning of Bi{sub 2}Te{sub 3} doping and/or SnTe alloying levels, while avoiding the less mechanically favorable Na dopant. It was shown that upon such doping/alloying, higher ZTs, compared to those of previously reported undoped Pb{sub 0.5}Sn{sub 0.5}Te alloy, were obtained at temperatures lower than 210–340 °C, depending of the exact doping/alloying level. It was demonstrated that upon optimal grading of the carrier concentration, a maximal thermoelectric efficiency enhancement of ∼38%, compared to that of an undoped material, is expected.

  2. Rare-earth-rich tellurides: Gd{sub 4}NiTe{sub 2} and Er{sub 5}M{sub 2}Te{sub 2} (M=Co, Ni)

    SciTech Connect

    Magliocchi, Carmela; Meng, Fanqin; Hughbanks, Timothy . E-mail: trh@mail.chem.tamu.edu

    2004-11-01

    Three new rare earth metal-rich compounds, Gd{sub 4}NiTe{sub 2}, and Er{sub 5}M{sub 2}Te{sub 2} (M=Ni, Co), were synthesized in direct reactions using R, R{sub 3}M, and R{sub 2}Te{sub 3} (R=Gd, Er; M=Co, Ni) and single-crystal structures were determined. Gd{sub 4}NiTe{sub 2} is orthorhombic and crystallizes in space group Pnma with four formula units per cell. Lattice parameters at 110(2)K are a=15.548(9), b=4.113(2), c=11.7521(15)A. Er{sub 5}Ni{sub 2}Te{sub 2} and Er{sub 5}Co{sub 2}Te{sub 2} are isostructural and crystallize in the orthorhombic space group Cmcm with two formula units per cell. Lattice parameters at 110(2)K are a=3.934(1), b=14.811(4), c=14.709(4)A, and a=3.898(1), b=14.920(3), c=14.889(3)A, respectively. Metal-metal bonding correlations were analyzed using the empirical Pauling bond order concept.

  3. Thin Metal Oxide Films to Modify a Window Layer in CdTe-Based Solar Cells for Improved Performance

    SciTech Connect

    Lemmon, John P.; Polikarpov, Evgueni; Bennett, Wendy D.; Kovarik, Libor

    2012-05-25

    We report on CdS/CdTe photovoltaic devices that contain a thin Ta₂O₅ film deposited onto the CdS window layer by sputtering. We show that for thicknesses below 5 nm, Ta₂O₅ films between CdS and CdTe positively affect the solar cell performance, improving JSC, VOC, and the cell power conversion efficiency despite the insulating nature of the interlayer material. Using the Ta₂O₅ interlayer, a VOC gain of over 100 mV was demonstrated compared to a CdTe/CdS baseline. Application of a 1nm Ta₂O₅ interlayer enabled the fabrication of CdTe solar cells with extremely thin (less than 30 nm) CdS window layers. The efficiency of these cells exceeded that of a base line cell with 95 nm of CdS.

  4. Modeling Cu Migration in CdTe Solar Cells Under Device-Processing and Long-Term Stability Conditions: Preprint

    SciTech Connect

    Teeter, G.; Asher, S.

    2008-05-01

    An impurity migration model for systems with material interfaces is applied to Cu migration in CdTe solar cells. In the model, diffusion fluxes are calculated from the Cu chemical potential gradient. Inputs to the model include Cu diffusivities, solubilities, and segregation enthalpies in CdTe, CdS and contact materials. The model yields transient and equilibrium Cu distributions in CdTe devices during device processing and under field-deployed conditions. Preliminary results for Cu migration in CdTe photovoltaic devices using available diffusivity and solubility data from the literature show that Cu segregates in the CdS, a phenomenon that is commonly observed in devices after back-contact processing and/or stress conditions.

  5. Polarization of Bi{sub 2}Te{sub 3} thin film in a floating-gate capacitor structure

    SciTech Connect

    Yuan, Hui E-mail: qli6@gmu.edu; Li, Haitao; Zhu, Hao; Zhang, Kai; Baumgart, Helmut; Bonevich, John E.; Richter, Curt A.; Li, Qiliang E-mail: qli6@gmu.edu

    2014-12-08

    Metal-Oxide-Semiconductor (MOS) capacitors with Bi{sub 2}Te{sub 3} thin film sandwiched and embedded inside the oxide layer have been fabricated and studied. The capacitors exhibit ferroelectric-like hysteresis which is a result of the robust, reversible polarization of the Bi{sub 2}Te{sub 3} thin film while the gate voltage sweeps. The temperature-dependent capacitance measurement indicates that the activation energy is about 0.33?eV for separating the electron and hole pairs in the bulk of Bi{sub 2}Te{sub 3}, and driving them to either the top or bottom surface of the thin film. Because of the fast polarization speed, potentially excellent endurance, and the complementary metaloxidesemiconductor compatibility, the Bi{sub 2}Te{sub 3} embedded MOS structures are very interesting for memory application.

  6. CdSe/CdTe type-II superlattices grown on GaSb (001) substrates by molecular beam epitaxy

    SciTech Connect

    Li Jingjing; Liu Shi; Wang Shumin; Ding Ding; Johnson, Shane R.; Zhang Yonghang; Liu Xinyu; Furdyna, Jacek K.; Smith, David J.

    2012-03-19

    CdSe/CdTe superlattices are grown on GaSb substrates using molecular beam epitaxy. X-ray diffraction measurements and cross-sectional transmission electron microscopy images indicate high crystalline quality. Photoluminescence (PL) measurements show the effective bandgap varies with the superlattice layer thicknesses and confirm the CdSe/CdTe heterostructure has a type-II band edge alignment. The valence band offset between unstrained CdTe and CdSe is determined as 0.63 {+-} 0.06 eV by fitting the measured PL peak positions using the envelope function approximation and the Kronig-Penney model. These results suggest that CdSe/CdTe superlattices are promising candidates for multi-junction solar cells and other optoelectronic devices based on GaSb substrates.

  7. Search for quark compositeness in dijet angular distributions from pp collisions at sqrt(s) = 7 TeV

    SciTech Connect

    Chatrchyan, Serguei; et al.

    2012-05-01

    A search for quark compositeness using dijet angular distributions from pp collisions at sqrt(s) = 7 TeV is presented. The search has been carried out using a data sample corresponding to an integrated luminosity of 2.2 inverse femtobarns, recorded by the CMS experiment at the LHC. Normalized dijet angular distributions have been measured for dijet invariant masses from 0.4 TeV to above 3 TeV and compared with a variety of contact interaction models, including those which take into account the effects of next-to-leading-order QCD corrections. The data are found to be in agreement with the predictions of perturbative QCD, and lower limits are obtained on the contact interaction scale, ranging from 7.5 up to 14.5 TeV at 95% confidence level.

  8. The effects of deep level traps on the electrical properties of semi-insulating CdZnTe

    SciTech Connect

    Zha, Gangqiang; Yang, Jian; Xu, Lingyan; Feng, Tao; Wang, Ning; Jie, Wanqi

    2014-01-28

    Deep level traps have considerable effects on the electrical properties and radiation detection performance of high resistivity CdZnTe. A deep-trap model for high resistivity CdZnTe was proposed in this paper. The high resistivity mechanism and the electrical properties were analyzed based on this model. High resistivity CdZnTe with high trap ionization energy E{sub t} can withstand high bias voltages. The leakage current is dependent on both the deep traps and the shallow impurities. The performance of a CdZnTe radiation detector will deteriorate at low temperatures, and the way in which sub-bandgap light excitation could improve the low temperature performance can be explained using the deep trap model.

  9. The tin impurity in Bi0.5Sb1.5Te3 alloys | Department of Energy

    Energy.gov [DOE] (indexed site)

    Extends work on tin to p-type thermoelectric alloys of formula Bi(2-x)Sb(x)Te(3) doped ... More Documents & Publications Resonant Level Enhancement of the Thermoelectric Power of ...

  10. Characterization of silver photodiffusion in Ge{sub 8}Sb{sub 2}Te{sub 11} thin films

    SciTech Connect

    Kumar, Sandeep; Singh, D.; Sandhu, S.; Thangaraj, R.

    2015-06-24

    Silver-doped amorphous Ge{sub 8}Sb{sub 2}Te{sub 11} thin films have been prepared by photodiffusion at room-temperature; the Ge{sub 8}Sb{sub 2}Te{sub 11}/Ag bilayer was deposited by vacuum thermal evaporation. Photodiffusion of Ag into the amorphous Ge{sub 8}Sb{sub 2}Te{sub 11} thin films has been carried out by illuminating the prepared Ge{sub 8}Sb{sub 2}Te{sub 11}/Ag bilayer with halogen lamp. The photodiffused silver depth profile was traced by means of time of flight secondary ion mass spectroscopy. The film remains amorphous after Ag photodiffusion. The crystallization temperature of the films was evaluated by temperature dependent sheet resistance measurement. The amorphous nature and crystalline phases of the films have been identified by using X-ray diffraction.

  11. One-Dimensional Reaction-Diffusion Simulation of Cu Migration in Polycrystalline CdTe Solar Cells

    SciTech Connect

    Guo, Da; Akis, Richard; Brinkman, Daniel; Sankin, Igor; Fang, Tian; Vasileska, Dragica; Ringhofer, Christain

    2014-06-13

    In this work, we report on developing 1D reaction-diffusion solver to understand the kinetics of p-type doping formation in CdTe absorbers and to shine some light on underlying causes of metastabilities observed in CdTe PV devices. Evolution of intrinsic and Cu-related defects in CdTe solar cell has been studied in time-space domain self-consistently with free carrier transport and Poisson equation. Resulting device performance was simulated as a function of Cu diffusion anneal time showing pronounced effect the evolution of associated acceptor and donor states can cause on device characteristics. Although 1D simulation has intrinsic limitations when applied to poly-crystalline films, the results suggest strong potential of the approach in better understanding of the performance and metastabilities of CdTe photovoltaic device.

  12. Expanding the Limits of CdTe PV Performance: Phase I Annual Report, 7 February 2006 - 30 June 2007

    SciTech Connect

    Meyers, P.

    2007-12-01

    First Solar made 9 CdTe PV devices; found two front- and one back-side structures that show improved Jsc and Voc, respectively, compared to base device structure; best cell efficiency was 14.13%.

  13. Background limited mid-infrared photodetection with photovoltaic HgTe colloidal quantum dots

    SciTech Connect

    Guyot-Sionnest, Philippe Roberts, John Andris

    2015-12-21

    The photovoltaic response of thin films of HgTe colloidal quantum dots in the 3–5 μm range is observed. With no applied bias, internal quantum efficiency exceeding 40%, specific detectivity above 10{sup 10} Jones and microseconds response times are obtained at 140 K. The cooled devices detect the ambient thermal radiation. A detector with 5.25 μm cut-off achieves Background Limited Infrared Photodetection at 90 K.

  14. Dijet Azimuthal Decorrelations in pp Collisions at sqrt(s) = 7 TeV

    SciTech Connect

    Khachatryan, Vardan; et al.

    2011-03-01

    Measurements of dijet azimuthal decorrelations in pp collisions at sqrt(s) = 7 TeV using the CMS detector at the CERN LHC are presented. The analysis is based on an inclusive dijet event sample corresponding to an integrated luminosity of 2.9 inverse picobarns. The results are compared to predictions from perturbative QCD calculations and various Monte Carlo event generators. The dijet azimuthal distributions are found to be sensitive to initial-state gluon radiation.

  15. New acceptor centers of the background impurities in p-CdZnTe

    SciTech Connect

    Plyatsko, S. V. Rashkovetskyi, L. V.

    2013-07-15

    Low-temperature photoluminescence data are used to study the redistribution of the background impurities and host components of p-CdZnTe single crystals with a resistivity of 1-50 {Omega} cm upon their interaction with infrared laser radiation. The effect of widening of the band gap and the formation of new acceptor centers in response to laser-stimulated changes in the system of intrinsic defects are established. The activation energy of the new acceptor centers is determined.

  16. CdTe X-ray detectors under strong optical irradiation

    SciTech Connect

    Cola, Adriano; Farella, Isabella

    2014-11-17

    The perturbation behaviour of Ohmic and Schottky CdTe detectors under strong optical pulses is investigated. To this scope, the electric field profiles and the induced charge transients are measured, thus simultaneously addressing fixed and free charges properties, interrelated by one-carrier trapping. The results elucidate the different roles of the contacts and deep levels, both under dark and strong irradiation conditions, and pave the way for the improvement of detector performance control under high X-ray fluxes.

  17. Exploring Higgs Compositeness Mechanism in the Era of the 14 TeV LHC |

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Argonne Leadership Computing Facility Exploring Higgs Compositeness Mechanism in the Era of the 14 TeV LHC PI Name: George Fleming PI Email: george.fleming@yale.edu Institution: Yale University Allocation Program: ALCC Allocation Hours at ALCF: 55 Million Year: 2016 Research Domain: Physics A primary goal of physics is to describe the universe through its most fundamental forces and particles. The current culmination of this goal, The Standard Model, has withstood ~40 years of rigorous

  18. Quantum oscillations in magnetothermopower measurements of topological insulator Bi2Te3

    DOE PAGES [OSTI]

    Qu, Dong -Xia; Hor, Y. S.; Cava, R. J.

    2012-12-10

    We report the magnetothermopower measurements of the nonmetallic topological insulator Bi2Te3 in magnetic fields up to 35 T. Quantum oscillations arising from surface states are observed in both thermoelectric and conductivity tensors. The inferred surface thermopower has a peak magnitude ~1 mV/K possibly as a result of surface electron and bulk phonon interaction. At the n = 1 Landau level, we resolve additional quantum oscillations signaling Landau sublevels.

  19. Beauty production cross section measurements at E(cm) = 1.96-TeV

    SciTech Connect

    D'Onofrio, Monica; /Geneva U.

    2005-05-01

    The RunII physics program at the Tevatron started in spring 2001 with protons and antiprotons colliding at an energy of {radical}s = 1.96 TeV, and it is carrying on with more than 500 pb{sup -1} of data as collected by both the CDF and D0 experiments. Recent results on beauty production cross section measurements are here reported.

  20. Theoretical Studies of TE-Wave Propagation as a Diagnostic for Electron Cloud

    SciTech Connect

    Penn, Gregory E; Vay, Jean-Luc

    2010-05-17

    The propagation of TE waves is sensitive to the presence of an electron cloud primarily through phase shifts generated by the altered dielectric function, but can also lead to polarization changes and other effects, especially in the presence of magnetic fields. These effects are studied theoretically and also through simulations using WARP. Examples are shown related to CesrTA parameters, and used to observe different regimes of operation as well as to validate estimates of the phase shift.

  1. Search for new particles decaying to diject in 7 TeV proton-proton collisions at CMS

    SciTech Connect

    Ozturk, Sertac; /Cukurova U.

    2011-03-01

    This thesis presents a measurement of the dijet invariant mass spectrum and search for new particles decaying to dijets at CMS in 7 TeV pp collisions using data corresponding to an integrated luminosity of 2.875 pb{sup -1}. The measured dijet mass distribution is compared to QCD prediction from PYTHIA . It is required the pseudorapidity separation of the two jets to satisfy |Dh| < 1.3 with each jet inside the region of |{eta}| < 2.5. The observed dijet mass spectrum is fitted by a smooth function to search for dijet resonances. Since there is no evidence for dijet resonances, the upper limits at 95% Confidence Level (C.L.) on the resonance cross section are set. These generic cross section limits are compared with theoretical predictions for the cross section for several models of new particles: string resonances, axigluons, colorons, excited quarks, E{sub 6} diquarks, Randall-Sundrum gravitons, W' and Z'. It is excluded at 95% C.L. string resonances in the mass range 0.50 < M(S) < 2.50 TeV, excited quarks in the mass range 0.50 < M(q*) < 1.58 TeV, axigluons and colorons in the mass ranges 0.50 < M(A) < 1.17 TeV and 1.47 < M(A) < 1.52 TeV, and E{sub 6} diquarks in the mass ranges 0.50 < M(D) < 0.58 TeV, 0.97 < M(D) < 1.08 TeV, and 1.45 < M(D) < 1.60 TeV. These exclusions extend previously published limits on all models.

  2. Searching for Neutrinoless Double-Beta Decay of130Te with CUORE

    DOE PAGES [OSTI]

    Artusa, D. R.; Avignone, F. T.; Azzolini, O.; Balata, M.; Banks, T. I.; Bari, G.; Beeman, J.; Bellini, F.; Bersani, A.; Biassoni, M.; et al

    2015-01-01

    Neutrinoless double-beta (0???) decay is a hypothesized lepton-number-violating process that offers the only known means of asserting the possible Majorana nature of neutrino mass. The Cryogenic Underground Observatory for Rare Events (CUORE) is an upcoming experiment designed to search for 0???decay of130Te using an array of 988 TeO2crystal bolometers operated at 10?mK. The detector will contain 206?kg of130Te and have an average energy resolution of 5?keV; the projected 0???decay half-life sensitivity after five years of livetime is 1.6??1026?y at 1?(9.5??1025?y at the 90% confidence level), which corresponds to an upper limit on the effective Majorana massmorein the range 40100?meV (50130?meV). In this paper, we review the experimental techniques used in CUORE as well as its current status and anticipated physics reach.less

  3. Thin Film CIGS and CdTe Photovoltaic Technologies: Commercialization, Critical Issues, and Applications; Preprint

    SciTech Connect

    Ullal, H. S.; von Roedern, B.

    2007-09-01

    We report here on the major commercialization aspects of thin-film photovoltaic (PV) technologies based on CIGS and CdTe (a-Si and thin-Si are also reported for completeness on the status of thin-film PV). Worldwide silicon (Si) based PV technologies continues to dominate at more than 94% of the market share, with the share of thin-film PV at less than 6%. However, the market share for thin-film PV in the United States continues to grow rapidly over the past several years and in CY 2006, they had a substantial contribution of about 44%, compared to less than 10% in CY 2003. In CY 2007, thin-film PV market share is expected to surpass that of Si technology in the United States. Worldwide estimated projections for CY 2010 are that thin-film PV production capacity will be more than 3700 MW. A 40-MW thin-film CdTe solar field is currently being installed in Saxony, Germany, and will be completed in early CY 2009. The total project cost is Euro 130 million, which equates to an installed PV system price of Euro 3.25/-watt averaged over the entire solar project. This is the lowest price for any installed PV system in the world today. Critical research, development, and technology issues for thin-film CIGS and CdTe are also elucidated in this paper.

  4. Search for Neutrinoless Double-Beta Decay of Te130 with CUORE-0

    DOE PAGES [OSTI]

    Alfonso, K.; Artusa, D. R.; Avignone, F. T.; Azzolini, O.; Balata, M.; Banks, T. I.; Bari, G.; Beeman, J. W.; Bellini, F.; Bersani, A.; et al

    2015-09-03

    We report the results of a search for neutrinoless double-beta decay in a 9.8 kg yr exposure of 130Te using a bolometric detector array, CUORE-0. The characteristic detector energy resolution and background level in the region of interest are 5:1± 0:3 keV FWHM and 0:058 ± 0:004 (stat) ± 0:002 (syst) counts / (keV kg yr), respectively. The median 90% C.L. lower-limit half-life sensitivity of the experiment is 2:9x1024 yr and surpasses the sensitivity of previous searches. We find no evidence for neutrinoless double-beta decay of 130Te and place a Bayesian lower bound on the decay half-life, T0ν1/2 > 2.7more » x 1024 yr at 90% C.L. Combining CUORE-0 data with the 19.75 kg yr exposure of 130Te from the Cuoricino experiment we obtain T0ν1/2 > 4.0 x 1024 yr at 90% C.L. (Bayesian), the most stringent limit to date on this half-life. Lastly, using a range of nuclear matrix element estimates we interpret this as a limit on the e ective Majorana neutrino mass, mββ < 270 -760 meV.« less

  5. High-efficiency, flexible CdTe solar cells on ultra-thin glass substrates

    SciTech Connect

    Mahabaduge, H. P.; Rance, W. L.; Burst, J. M.; Reese, M. O.; Gessert, T. A.; Metzger, W. K.; Barnes, T. M.; Meysing, D. M.; Wolden, C. A.; Li, J.; Beach, J. D.; Garner, S.

    2015-03-30

    Flexible, high-efficiency, low-cost solar cells can enable applications that take advantage of high specific power, flexible form factors, lower installation and transportation costs. Here, we report a certified record efficiency of 16.4% for a flexible CdTe solar cell that is a marked improvement over the previous standard (14.05%). The improvement was achieved by replacing chemical-bath-deposited CdS with sputtered CdS:O and also replacing the high-temperature sputtered ZnTe:Cu back contact layer with co-evaporated and rapidly annealed ZnTe:Cu. We use quantum efficiency and capacitance-voltage measurements combined with device simulations to identify the reasons for the increase in efficiency. Both device simulations and experimental results show that higher carrier density can quantitatively account for the increased open circuit voltage (V{sub OC}) and Fill Factor (FF), and likewise, the increase in short circuit current density (J{sub SC}) can be attributed to the more transparent CdS:O.

  6. Searching for Neutrinoless Double-Beta Decay of 130 Te with CUORE

    DOE PAGES [OSTI]

    Artusa, D. R.; Avignone, F. T.; Azzolini, O.; Balata, M.; Banks, T. I.; Bari, G.; Beeman, J.; Bellini, F.; Bersani, A.; Biassoni, M.; et al

    2015-01-01

    Neumore » trinoless double-beta (0 ν β β ) decay is a hypothesized lepton-number-violating process that offers the only known means of asserting the possible Majorana nature of neutrino mass. The Cryogenic Underground Observatory for Rare Events (CUORE) is an upcoming experiment designed to search for 0 ν β β decay of 130 Te using an array of 988 TeO 2 crystal bolometers operated at 10 mK. The detector will contain 206 kg of 130 Te and have an average energy resolution of 5 keV; the projected 0 ν β β decay half-life sensitivity after five years of livetime is 1.6 × 10 26  y at 1 σ (9.5 × 10 25  y at the 90% confidence level), which corresponds to an upper limit on the effective Majorana mass in the range 40–100 meV (50–130 meV). In this paper, we review the experimental techniques used in CUORE as well as its current status and anticipated physics reach.« less

  7. Vacancy structures and melting behavior in rock-salt GeSbTe

    DOE PAGES [OSTI]

    Zhang, Bin; Wang, Xue -Peng; Shen, Zhen -Ju; Li, Xian -Bin; Wang, Chuan -Shou; Chen, Yong -Jin; Li, Ji -Xue; Zhang, Jin -Xing; Zhang, Ze; Zhang, Sheng -Bai; et al

    2016-05-03

    Ge-Sb-Te alloys have been widely used in optical/electrical memory storage. Because of the extremely fast crystalline-amorphous transition, they are also expected to play a vital role in next generation nonvolatile microelectronic memory devices. However, the distribution and structural properties of vacancies have been one of the key issues in determining the speed of melting (or amorphization), phase-stability, and heat-dissipation of rock-salt GeSbTe, which is crucial for its technological breakthrough in memory devices. Using spherical aberration-aberration corrected scanning transmission electron microscopy and atomic scale energy-dispersive X-ray mapping, we observe a new rock-salt structure with high-degree vacancy ordering (or layered-like ordering) atmore » an elevated temperature, which is a result of phase transition from the rock-salt phase with randomly distributed vacancies. First-principles calculations reveal that the phase transition is an energetically favored process. Furthermore, molecular dynamics studies suggest that the melting of the cubic rock-salt phases is initiated at the vacancies, which propagate to nearby regions. The observation of multi-rock-salt phases suggests another route for multi-level data storage using GeSbTe.« less

  8. Beam extraction from TeV accelerators using channeling in bent crystals

    SciTech Connect

    Carrigan, R.A. Jr.; Toohig, T.E.; Tsyganov, E.N.; Superconducting Super Collider Lab., Dallas, TX; Joint Inst. for Nuclear Research, Dubna )

    1989-08-01

    Bent crystal channeling offers an interesting alternative for beam extraction from trans-GeV accelerators. Conventional extraction employs resonant beam blow-up coupled with electromagnetic beam deflecting channels. It is limited by the length of the available accelerator straight section. Channeling crystals require much less space. A five-step approach to applying crystal extraction in the Superconducting Super Collider (SSC) is discussed. Two steps, extraction from the 8 GeV Dubna Synchrophasotron and the 76 GeV Serpukhov accelerator, have occurred. The next possibility is extraction from a multi-hundred GeV superconducting accelerator. In the nineties the program could continue at UNK (3 TeV) and culminate at the TeV SSC. The possibilities and limitations of crystal extraction are reviewed. More information is needed on dechanneling in bent crystals including the effects of dislocations at TeV energies. Long, dislocation-free'' crystals are required. A more thorough understanding of the theory of crystal extraction is also desirable. 12 refs.

  9. Superconductivity and charge density wave in ZrTe3–xSex

    DOE PAGES [OSTI]

    Zhu, Xiangde; Ning, Wei; Li, Lijun; Ling, Langsheng; Zhang, Ranran; Zhang, Jinglei; Wang, Kefeng; Liu, Yu; Pi, Li; Ma, Yongchang; et al

    2016-06-02

    Charge density wave (CDW), the periodic modulation of the electronic charge density, will open a gap on the Fermi surface that commonly leads to decreased or vanishing conductivity. On the other hand superconductivity, a commonly believed competing order, features a Fermi surface gap that results in infinite conductivity. Here we report that superconductivity emerges upon Se doping in CDW conductor ZrTe3 when the long range CDW order is gradually suppressed. Superconducting critical temperature Tc(x) in ZrTe3–xSex (0 ≤ x ≤ 0.1) increases up to 4 K plateau for 0.04 ≤ x ≤ 0.07. Further increase in Se content results inmore » diminishing Tc and filametary superconductivity. The CDW modes from Raman spectra are observed in x = 0.04 and 0.1 crystals, where signature of ZrTe3 CDW order in resistivity vanishes. As a result, the electronic-scattering for high Tc crystals is dominated by local CDW fluctuations at high temperatures, the resistivity is linear up to highest measured T = 300 K and contributes to substantial in-plane anisotropy.« less

  10. Synthesis of CdSe/ZnS and CdTe/ZnS Quantum Dots: Refined Digestive Ripening

    DOE PAGES [OSTI]

    Cingarapu, Sreeram; Yang, Zhiqiang; Sorensen, Christopher M.; Klabunde, Kenneth J.

    2012-01-01

    We report synthesis of CdSe and CdTe quantum dots (QDs) from the bulk CdSe and CdTe material by evaporation/co-condensation using the solvated metal atom dispersion (SMAD) technique and refined digestive ripening. The outcomes of this new process are (1) the reduction of digestive ripening time by employing ligands (trioctylphosphine oxide (TOPO) and oleylamine (OA)) as capping agent as well as digestive ripening solvent, (2) ability to tune the photoluminescence (PL) from 410 nm to 670 nm, (3) demonstrate the ability of SMAD synthesis technique for other semiconductors (CdTe), (4) direct comparison of CdSe QDs growth with CdTe QDs growth based on digestivemore » ripening times, and (5) enhanced PL quantum yield (QY) of CdSe QDs and CdTe QDs upon covering with a ZnS shell. Further, the merit of this synthesis is the use of bulk CdSe and CdTe as the starting materials, which avoids usage of toxic organometallic compounds, eliminates the hot injection procedure, and size selective precipitation processes. It also allows the possibility of scale up. These QDs were characterized by UV-vis, photoluminescence (PL), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), and powder XRD.« less

  11. Multiwavelength study of the northeastern outskirts of the extended TeV source HESS J1809193

    SciTech Connect

    Rangelov, Blagoy; Kargaltsev, Oleg; Hare, Jeremy; Volkov, Igor; Posselt, Bettina; Pavlov, George G.

    2014-11-20

    HESS J1809193 is an extended TeV ?-ray source in the Galactic plane. Multiwavelength observations of the HESS J1809193 field reveal a complex picture. We present results from three Chandra X-Ray Observatory and two Suzaku observations of a region in the northeastern outskirts of HESS J1809-193, where enhanced TeV emission has been reported. Our analysis also includes GeV ?-ray and radio data. One of the X-ray sources in the field is the X-ray binary XTE J1810-189, for which we present the outburst history from multiple observatories and confirm that XTE J1810-189 is a strongly variable type I X-ray burster, which can hardly produce TeV emission. We investigate whether there is any connection between the possible TeV extension of HESS J1809193 and the sources seen at lower energies. We find that another X-ray binary candidate, Suzaku J1811-1900, and a radio supernova remnant, SNR G11.40.1, can hardly be responsible for the putative TeV emission. Our multiwavelength classification of fainter X-ray point sources also does not produce a plausible candidate. We conclude that the northeast extension of HESS J1809193, if confirmed by deeper observations, can be considered a dark acceleratora TeV source without a visible counterpart at lower energies.

  12. Strong anisotropy and magnetostriction in the two-dimensional Stoner ferromagnet Fe3GeTe2

    DOE PAGES [OSTI]

    Zhuang, Houlong L.; Kent, P. R. C.; Hennig, Richard G.

    2016-04-06

    Comore » mputationally characterizing magnetic properies of novel two-dimensional (2D) materials serves as an important first step of exploring possible applications. Using density-functional theory, we show that single-layer Fe3GeTe2 is a potential 2D material with sufficiently low formation energy to be synthesized by mechanical exfoliation from the bulk phase with a van der Waals layered structure. In addition, we calculated the phonon dispersion demonstrating that single-layer Fe3GeTe2is dynamically stable. Furthermore, we find that similar to the bulk phase, 2D Fe3GeTe2 exhibits amagnetic moment that originates from a Stoner instability. In contrast to other 2D materials, we find that single-layer Fe3GeTe2 exhibits a significant uniaxial magnetocrystalline anisotropy energy of 920μ eV per Fe atom originating from spin-orbit coupling. In conclusion, we show that applying biaxial tensile strains enhances the anisotropy energy, which reveals strong magnetostriction in single-layer Fe3GeTe2 with a sizable magneostrictive coefficient. Our results indicate that single-layer Fe3GeTe2 is potentially useful for magnetic storage applications.« less

  13. Ultrathin nanosheets of CrSiTe3. A semiconducting two-dimensional ferromagnetic material

    SciTech Connect

    Lin, Ming -Wei; Zhung, Houlong L.; Yan, Jiaqiang; Ward, Thomas Zac; Puretzky, Alexander A.; Rouleau, Christopher M.; Gai, Zheng; Liang, Liangbo; Meunier, Vincent; Ganesh, Panchapakesan; Kent, Paul R. C.; Sumpter, Bobby G.; Mandrus, David G.; Geohegan, David B.; Xiao, Kai

    2015-11-27

    Finite range ferromagnetism and antiferromagnetism in two-dimensional (2D) systems within an isotropic Heisenberg model at non-zero temperature were originally proposed to be impossible. However, recent theoretical studies using an Ising model have recently shown that 2D magnetic crystals can exhibit magnetism. Experimental verification of existing 2D magnetic crystals in this system has remained elusive. In this work we for the first time exfoliate the CrSiTe3, a bulk ferromagnetic semiconductor, to mono- and few-layer 2D crystals onto a Si/SiO2 substrate. The Raman spectra show the good stability and high quality of the exfoliated flakes, consistent with the computed phonon spectra of 2D CrSiTe3, giving a strong evidence for the existence of 2D CrSiTe3 crystals. When the thickness of the CrSiTe3 crystals is reduced to few-layers, we observed a clear change in resistivity at 80~120 K, consistent with the theoretical calculations on the Curie temperature (Tc) of ~80 K for the magnetic ordering of 2D CrSiTe3 crystals. As a result, the ferromagnetic mono- and few-layer 2D CrSiTe3 indicated here should enable numerous applications in nano-spintronics.

  14. Topological crystalline insulator Pb{sub x}Sn{sub 1-x}Te thin films on SrTiO{sub 3} (001) with tunable Fermi levels

    SciTech Connect

    Guo, Hua; Liu, Jun-Wei; Wang, Zhen-Yu; Wu, Rui; Ji, Shuai-Hua; Duan, Wen-Hui; Chen, Xi Xue, Qi-Kun; Yan, Chen-Hui; Zhang, Zhi-Dong; Wang, Li-Li; He, Ke; Ma, Xu-Cun

    2014-05-01

    In this letter, we report a systematic study of topological crystalline insulator Pb{sub x}Sn{sub 1-x}Te (0 < x < 1) thin films grown by molecular beam epitaxy on SrTiO{sub 3}(001). Two domains of Pb{sub x}Sn{sub 1-x}Te thin films with intersecting angle of ? ? 45 were confirmed by reflection high energy diffraction, scanning tunneling microscopy, and angle-resolved photoemission spectroscopy (ARPES). ARPES study of Pb{sub x}Sn{sub 1-x}Te thin films demonstrated that the Fermi level of PbTe could be tuned by altering the temperature of substrate whereas SnTe cannot. An M-shaped valance band structure was observed only in SnTe but PbTe is in a topological trivial state with a large gap. In addition, co-evaporation of SnTe and PbTe results in an equivalent variation of Pb concentration as well as the Fermi level of Pb{sub x}Sn{sub 1-x}Te thin films.

  15. Search for resonances and quantum black holes using dijet mass spectra in proton-proton collisions at sqrt(s)=8 TeV

    SciTech Connect

    Khachatryan, V.; et al.,

    2015-03-01

    A search for resonances and quantum black holes is performed using the dijet mass spectra measured in proton-proton collisions at sqrt(s)=8 TeV with the CMS detector at the LHC. The data set corresponds to an integrated luminosity of 19.7 inverse femtobarns. In a search for narrow resonances that couple to quark-quark, quark-gluon, or gluon-gluon pairs, model-independent upper limits, at 95% confidence level, are obtained on the production cross section of resonances, with masses above 1.2 TeV. When interpreted in the context of specific models the limits exclude: string resonances with masses below 5.0 TeV; excited quarks below 3.5 TeV; scalar diquarks below 4.7 TeV; W' bosons below 1.9 TeV or between 2.0 and 2.2 TeV; Z' bosons below 1.7 TeV; and Randall-Sundrum gravitons below 1.6 TeV. A separate search is conducted for narrow resonances that decay to final states including b quarks. The first exclusion limit is set for excited b quarks, with a lower mass limit between 1.2 and 1.6 TeV depending on their decay properties. Searches are also carried out for wide resonances, assuming for the first time width-to-mass ratios up to 30%, and for quantum black holes with a range of model parameters. The wide resonance search excludes axigluons and colorons with mass below 3.6 TeV, and color-octet scalars with mass below 2.5 TeV. Lower bounds between 5.0 and 6.3 TeV are set on the masses of quantum black holes.

  16. Nanostructured rocksalt-type solid solution series (Ge{sub 1−x}Sn{sub x}Te){sub n}Sb{sub 2}Te{sub 3} (n=4, 7, 12; 0≤x≤1): Thermal behavior and thermoelectric properties

    SciTech Connect

    Rosenthal, Tobias; Neudert, Lukas; Ganter, Pirmin; Boor, Johannes de; Stiewe, Christian; Oeckler, Oliver

    2014-07-01

    Solid solutions (Ge{sub 1−x}Sn{sub x}Te){sub n}Sb{sub 2}Te{sub 3} (n=4, 7, 12; 0≤x≤1) represent stable high-temperature phases and can be obtained as metastable compounds by quenching. High-resolution transmission electron microscopy reveals that the quenched (pseudo-)cubic materials exhibit parquet-like nanostructures comparable to, but especially for n=4 more pronounced than in (GeTe){sub n}Sb{sub 2}Te{sub 3} (GST materials). The temperature-dependent phase transitions are comparable; however, substitution with Sn significantly lowers the transition temperatures between cubic high-temperature phase and the long range ordered layered phases that are stable at ambient conditions. In addition, the metrics of the quenched Sn-containing materials remains closer to cubic, especially for samples with n=7 or 12. For samples with high defect concentrations (n=4, 7), Sn-substituted samples exhibit electrical conductivities up to 3 times higher than those of corresponding GST materials. Since the difference in thermal conductivity is much less pronounced, this results in a doubling of the thermoelectric figure of merit (ZT) at high temperatures for (Ge{sub 0.5}Sn{sub 0.5}Te){sub 4}Sb{sub 2}Te{sub 3} as compared to (GeTe){sub 4}Sb{sub 2}Te{sub 3}. Sn doping in (GeTe){sub 7}Sb{sub 2}Te{sub 3} increases the ZT value by a factor of up to 4 which is also due to an increased Seebeck coefficient. - Graphical abstract: High-resolution transmission electron micrographs of (GeTe){sub 4}Sb{sub 2}Te{sub 3} (top) and (Ge{sub 0.5}Sn{sub 0.5}Te){sub 4}Sb{sub 2}Te{sub 3} (bottom) with different nanostructures and thermoelectric figures of merit (ZT) of these samples. - Highlights: • Representative samples of solid solutions of (Ge{sub 1−x}Sn{sub x}Te){sub n}Sb{sub 2}Te{sub 3} were synthesized. • Sn substitution leads to more pronounced nanostructures in defect-rich compounds. • Phase transitions are comparable to (GeTe){sub n}Sb{sub 2}Te{sub 3} but occur at lower temperatures

  17. Structural peculiarities and Raman spectra of TeO{sub 2}/WO{sub 3}-based glasses: A fresh look at the problem

    SciTech Connect

    Mirgorodsky, Andreie; Colas, Maggy; Smirnov, Mikhael; Merle-Mejean, Therese; El-Mallawany, Raouf; Thomas, Philippe

    2012-06-15

    Ideas currently dominating the field of structural studies of TeO{sub 2}-based glasses are critically considered. A new physically and chemically consistent approach to the constitution of binary TeO{sub 2}-WO{sub 3} glasses is proposed, in which the reasoning coming from the Raman spectra reexamination are correlated with the basic principles of thermodynamics. Separation into two phases is suggested in such glasses. One phase is TeO{sub 2}, and another is Te(WO{sub 4}){sub 2} consisting of tetrahedral [WO{sub 4}]{sup 2-} anions and of Te{sup 4+} cations. Supplementary M{sub n}O{sub k} oxides added to the glasses are found incorporated in the former phase, thus producing solid solutions (for M=Ti, Nb) or tellurite compounds (for M=Nd). - Graphical abstract: Raman scattering spectra of TeO{sub 2}-based glasses with the following compositions (mol%): (a) pure TeO{sub 2}, (b) 85TeO{sub 2}-15WO{sub 3}, (c) 80TeO{sub 2}-15WO{sub 3}-5TiO{sub 2} ,(d) 80TeO{sub 2}-10WO{sub 3}-5TiO{sub 2}-5Nb{sub 2}O{sub 5}, (e) 80TeO{sub 2}-12WO{sub 3}-5TiO{sub 2}-3 Nd{sub 2}O{sub 3}, (f) 80TeO{sub 2}-10WO{sub 3}-5TiO{sub 2}-5Nd{sub 2}O{sub 3}. Highlights: Black-Right-Pointing-Pointer Structural studies of TeO{sub 2}-WO{sub 3} glasses are critically considered. Black-Right-Pointing-Pointer The oxide glass formation is analyzed from Raman spectra and thermodynamic principles. Black-Right-Pointing-Pointer Separation into two phases, TeO{sub 2} and Te(WO{sub 4}){sub 2}, is intrinsic in such glasses. Black-Right-Pointing-Pointer TiO{sub 2} or Nb{sub 2}O{sub 5} addition to TeO{sub 2}-WO{sub 3} glasses leads to produce solid solutions. Black-Right-Pointing-Pointer Nd{sub 2}O{sub 3} addition to TeO{sub 2}-WO{sub 3} glasses leads to produce a tellurite compound.

  18. Point defects in CdTexSe1-x crystals grown from a Te-rich solution for applications in detecting radiation

    SciTech Connect

    Gul, R.; Roy, U. N.; Bolotnikov, A. E.; Camarda, G. S.; Cui, Y.; Hossain, A.; Lee, W.; Yang, G.; Burger, A.; James, R. B.; Cui, Y.

    2015-04-15

    We investigated cadmium telluride selenide (CdTeSe) crystals, newly grown by the Traveling Heater Method (THM), for the presence and abundance of point defects. Deep Level Transient spectroscopy (I-DLTS) was used to determine the energies of the traps, their capture cross sections, and densities. The bias across the detectors was varied from (1–30) V. Four types of point defects were identified, ranging from 10 meV to 0.35 eV. Two dominant traps at energies of 0.18 eV and 0.14 eV were studied in depth. Cd vacancies are found at lower concentrations than other point defects present in the material.

  19. Material and detector properties of cadmium manganese telluride (Cd1-xMnxTe) crystals grown by the modified floating-zone method

    DOE PAGES [OSTI]

    Hossain, A.; Gu, G. D.; Bolotnikov, A. E.; Camarda, G. S.; Cui, Y.; Roy, U. N.; Yang, G.; Liu, T.; Zhong, R.; Schneelock, J.; et al

    2014-12-24

    We demonstrated the material- and radiation-detection properties of cadmium manganese telluride (Cd1-xMnxTe; x=0.06), a wide-band-gap semiconductor crystal grown by the modified floating-zone method. We investigated the presence of various bulk defects, such as Te inclusions, twins, and dislocations of several as-grown indium-doped Cd1-xMnxTe crystals using different techniques, viz., IR transmission microscopy, and chemical etching. We then fabricated four planar detectors from selected CdMnTe crystals, characterized their electrical properties, and tested their performance as room-temperature X- and gamma-ray detectors. Thus, our experimental results show that CMT crystals grown by the modified floating zone method apparently are free from Te inclusions. However,more » we still need to optimize our growth parameters to attain high-resistivity, large-volume single-crystal CdMnTe.« less

  20. Search for New Phenomena in Dijet Angular Distributions in Proton-Proton Collisions at s = 8 TeV Measured with the ATLAS Detector

    DOE PAGES [OSTI]

    Aad, G.; Abbott, B.; Abdallah, J.; Abdinov, O.; Aben, R.; Abolins, M.; AbouZeid, O. S.; Abramowicz, H.; Abreu, H.; Abreu, R.; et al

    2015-06-04

    A search for new phenomena in LHC proton-proton collisions at a center-of-mass energy of √s=8 TeV was performed with the ATLAS detector using an integrated luminosity of 17.3 fb⁻¹. The angular distributions are studied in events with at least two jets; the highest dijet mass observed is 5.5 TeV. All angular distributions are consistent with the predictions of the standard model. In a benchmark model of quark contact interactions, a compositeness scale below 8.1 TeV in a destructive interference scenario and 12.0 TeV in a constructive interference scenario is excluded at 95% C.L.; median expected limits are 8.9 TeV formore » the destructive interference scenario and 14.1 TeV for the constructive interference scenario.« less

  1. Development of CdS/CdTe Tin Film Devices for St. Gobain Coated Glass: Cooperative Research and Development Final Report, CRADA Number CRD-08-317

    SciTech Connect

    Gessert, T.

    2012-04-01

    Research performed at NREL to produce CdS/CdTe devices on St. Gobain coated-glass material to establish a baseline CdS/CdTe device process and determine baseline device performance parameters on St. Gobain material. Performance of these baseline devices compared to similar devices produced by applying the established baseline CdS/CdTe process on alternative St. Gobain coated-glass materials.

  2. NREL Collaboration Breaks 1-Volt Barrier in CdTe Solar Technology (Fact Sheet), Highlights in Research & Development, NREL (National Renewable Energy Laboratory)

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    NREL scientists have worked with Washington State University and the University of Tennessee to improve the maximum voltage available from CdTe solar cells. Key Result Changes in dopants, stoichiometry, interface design, and defect chemistry improved the CdTe conductivity and carrier lifetime by orders of magnitude, thus enabling CdTe solar cells with open-circuit voltages exceeding 1 volt for the first time. Potential Impact Values of current density and fill factor for CdTe solar cells are

  3. Manufacturing Process Optimization to Improve Stability, Yield and Efficiency of CdS/CdTe PV Devices: Final Report, December 2004 - January 2009

    SciTech Connect

    Sampath, W. S.; Enzenroth, A.; Barth, K.

    2009-03-01

    The research by Colorado State University advances the understanding of device stability, efficiency, and process yield for CdTe PV devices.

  4. Switching of localized surface plasmon resonance of gold nanoparticles on a GeSbTe film mediated by nanoscale phase change and modification of surface morphology

    SciTech Connect

    Hira, T.; Homma, T.; Uchiyama, T.; Kuwamura, K.; Saiki, T.

    2013-12-09

    As a platform for active nanophotonics, localized surface plasmon resonance (LSPR) switching via interaction with a chalcogenide phase change material (GeSbTe) was investigated. We performed single-particle spectroscopy of gold nanoparticles placed on a GeSbTe thin film. By irradiation with a femtosecond pulsed laser for amorphization and a continuous wave laser for crystallization, significant switching behavior of the LSPR band due to the interaction of GeSbTe was observed. The switching mechanism was explained in terms of both a change in the refractive index and a modification of surface morphology accompanying volume expansion and reduction of GeSbTe.

  5. Defects in the crystal structure of Cd{sub x}Hg{sub 1-x}Te layers grown on the Si (310) substrates

    SciTech Connect

    Yakushev, M. V. Gutakovsky, A. K.; Sabinina, I. V.; Sidorov, Yu. G.

    2011-07-15

    Microstructure of the CdTe (310) and CdHgTe (310) layers grown by molecular-beam epitaxy on Si substrates has been studied by the methods of transmission electron microscopy and selective etching. It is established that formation of antiphase domains in the CdHgTe/CdTe/ZnTe/Si(310) is determined by the conditions of formation of the ZnTe/Si interface. Monodomain layers can be obtained by providing conditions that enhance zinc adsorption. An increase in the growth temperature and in the pressure of Te{sub 2} vapors gives rise to antiphase domains and induces an increase in their density to the extent of the growth of poly-crystals. It is found that stacking faults exist in a CdHgTe/Si(310) heterostructure; these defects are anisotropically distributed in the bulk of grown layers. The stacking faults are predominantly located in one (111) plane, which intersects the (310) surface at an angle of 68 Degree-Sign . The stacking faults originate at the ZnTe/Si(310) interface. The causes of origination of stacking faults and of their anisotropic distribution are discussed.

  6. RAPID TeV GAMMA-RAY FLARING OF BL LACERTAE

    SciTech Connect

    Arlen, T.; Aune, T.; Bouvier, A.; Beilicke, M.; Buckley, J. H.; Bugaev, V.; Dickherber, R.; Benbow, W.; Cesarini, A.; Connolly, M. P.; Ciupik, L.; Cui, W.; Feng, Q.; Finley, J. P.; Dumm, J.; Fortson, L.; Errando, M.; Falcone, A.; Federici, S.; Finnegan, G. E-mail: cui@purdue.edu; Collaboration: VERITAS Collaboration; and others

    2013-01-10

    We report on the detection of a very rapid TeV gamma-ray flare from BL Lacertae on 2011 June 28 with the Very Energetic Radiation Imaging Telescope Array System (VERITAS). The flaring activity was observed during a 34.6 minute exposure, when the integral flux above 200 GeV reached (3.4 {+-} 0.6) Multiplication-Sign 10{sup -6} photons m{sup -2} s{sup -1}, roughly 125% of the Crab Nebula flux measured by VERITAS. The light curve indicates that the observations missed the rising phase of the flare but covered a significant portion of the decaying phase. The exponential decay time was determined to be 13 {+-} 4 minutes, making it one of the most rapid gamma-ray flares seen from a TeV blazar. The gamma-ray spectrum of BL Lacertae during the flare was soft, with a photon index of 3.6 {+-} 0.4, which is in agreement with the measurement made previously by MAGIC in a lower flaring state. Contemporaneous radio observations of the source with the Very Long Baseline Array revealed the emergence of a new, superluminal component from the core around the time of the TeV gamma-ray flare, accompanied by changes in the optical polarization angle. Changes in flux also appear to have occurred at optical, UV, and GeV gamma-ray wavelengths at the time of the flare, although they are difficult to quantify precisely due to sparse coverage. A strong flare was seen at radio wavelengths roughly four months later, which might be related to the gamma-ray flaring activities. We discuss the implications of these multiwavelength results.

  7. Minority carrier lifetime in iodine-doped molecular beam epitaxy-grown HgCdTe

    SciTech Connect

    Madni, I.; Umana-Membreno, G. A.; Lei, W.; Gu, R.; Antoszewski, J.; Faraone, L.

    2015-11-02

    The minority carrier lifetime in molecular beam epitaxy grown layers of iodine-doped Hg{sub 1−x}Cd{sub x}Te (x ∼ 0.3) on CdZnTe substrates has been studied. The samples demonstrated extrinsic donor behavior for carrier concentrations in the range from 2 × 10{sup 16} cm{sup −3} to 6 × 10{sup 17} cm{sup −3} without any post-growth annealing. At a temperature of 77 K, the electron mobility was found to vary from 10{sup 4} cm{sup 2}/V s to 7 × 10{sup 3} cm{sup 2}/V s and minority carrier lifetime from 1.6 μs to 790 ns, respectively, as the carrier concentration was increased from 2 × 10{sup 16} cm{sup −3} to 6 × 10{sup 17} cm{sup −3}. The diffusion of iodine is much lower than that of indium and hence a better alternative in heterostructures such as nBn devices. The influence of carrier concentration and temperature on the minority carrier lifetime was studied in order to characterize the carrier recombination mechanisms. Measured lifetimes were also analyzed and compared with the theoretical models of the various recombination processes occurring in these materials, indicating that Auger-1 recombination was predominant at higher doping levels. An increase in deep-level generation-recombination centers was observed with increasing doping level, which suggests that the increase in deep-level trap density is associated with the incorporation of higher concentrations of iodine into the HgCdTe.

  8. Fermi level pinning in Fe-doped PbTe under pressure

    SciTech Connect

    Skipetrov, E. P. Kruleveckaya, O. V.; Skipetrova, L. A.; Slynko, E. I.; Slynko, V. E.

    2014-07-14

    We synthesize an iron-doped PbTe single-crystal ingot and investigate the phase and the elemental composition as well as galvanomagnetic properties in weak magnetic fields (4.2?K?T?300?K, B???0.07?T) of Pb{sub 1?y}Fe{sub y}Te alloys upon varying the iron content, at atmospheric pressure and under hydrostatic compression up to 10 kilobars. We find an increase of iron concentration along the length of the ingot and the appearance of microscopic inclusions enriched with iron in the heavily doped samples. Lightly doped alloys are characterized by the p-type metal conductivity. An increase of the iron impurity content leads to a decrease in the free hole concentration, a stabilization of galvanomagnetic parameters, indicating the pinning of the Fermi energy by the iron resonant impurity level lying under the bottom of the valence band, and to the p-n inversion of the conductivity type. Under pressure, the free hole concentration in the sample, in which the stabilization of galvanomagnetic parameters takes place, increases by approximately a factor of four due to the flow of electrons from the valence band to the iron-induced resonant level. Using the two-band Kane and the six-band Dimmock dispersion relations, the pressure dependence of the Fermi energy is calculated. The model of the electronic structure rearrangement of Pb{sub 1?y}Fe{sub y}Te under pressure is proposed. The energy position and the pressure coefficient of the resonant iron impurity level are determined.

  9. High thermal stability Sb{sub 3}Te-TiN{sub 2} material for phase change memory application

    SciTech Connect

    Ji, Xinglong; Zhou, Wangyang; Wu, Liangcai Zhu, Min; Rao, Feng; Song, Zhitang; Cao, Liangliang; Feng, Songlin

    2015-01-12

    For phase change memory (PCM) applications, it has been widely accepted that δ phase Sb-Te has fast operation speed and good phase stability. However, the fast growth crystallization mechanism will cause poor amorphous phase stability and overlarge grain size. We introduce TiN{sub 2} into δ phase Sb-Te (Sb{sub 3}Te) to enhance the amorphous thermal stability and refine the grain size. With TiN{sub 2} incorporating, the temperature for 10-year data retention increases from 79 °C to 124 °C. And the grain size decreases to dozens of nanometers scale. Based on X-ray photoelectron spectroscopy and transmission electron microscopy results, we knew that nitrogen atoms bond with titanium, forming disorder region at the grain boundary of Sb{sub 3}Te-TiN{sub 2} (STTN). Thus, STTN has a quite different crystallization mechanism from Sb{sub 3}Te. Furthermore, PCM device based on STTN can realize reversible phase change under 20 ns electrical pulse.

  10. The Crystallization Behavior of Stochiometric and Off-stochiometric Ga-Sb-Te Materials for Phase-Change Memory

    SciTech Connect

    H Cheng; S Raoux; J Jordan-Sweet

    2011-12-31

    The stoichiometric Ga{sub 4}Sb{sub 6}Te{sub 3} and Ga-Sb materials were systematically studied. The alloy Ga{sub 4}Sb{sub 6}Te{sub 3} shows a fast crystallization speed, very high crystallization temperature, T{sub x}, and high electrical contrast. Although stoichiometric GaSb has similar performance and even faster crystallization speed, the electrical contrast is much lower. The other off-stoichiometric compounds we studied all have higher T{sub x} than Ge{sub 2}Sb{sub 2}Te{sub 5} indicating a good amorphous stability. By raising the Sb/Te ratio with GaSb incorporation, T{sub x} and the recrystallization time of melt-quenched, amorphous samples can be effectively increased. The stoichiometric Ga{sub 4}Sb{sub 6}Te{sub 3} with less likelihood of phase-segregation compared to nonstoichiometric compounds is a promising candidate for phase-change memory.

  11. Fabrication and Spark plasma sintering of nanostructured bismuth telluride (Bi{sub 2}Te{sub 3})

    SciTech Connect

    Saleemi, Mohsin; Toprak, Muhammet S.; Li, Shanghua; Johnsson, Mats; Muhammed, Mamoun

    2012-06-26

    Thermoelectric (TE) devices can harvest residual low-grade waste heat energy. Bismuth telluride (Bi{sub 2}Te{sub 3}) and its alloys are mostly used TE materials in the bulk form for making TE modules. We report a simple, fast and very high yield synthetic process for the bulk Bi{sub 2}Te{sub 3} nanopowders with hexagonal plate like morphology. Spark plasma sintering (SPS) process has been optimized in order to preserve nanostructure while achieving a high compaction density of the pellets. Electron microscopy analysis was used to determine the effect of SPS parameters during compaction on the grain growth. Optimal conditions for the fabricated nanopowder was determined as 673 K, 70 MPa pressure with no holding time, which resulted in average lateral grain size in the range of 165-190 nm for a compact density of 98%. About 50% reduction of thermal conductivity was observed as compared to its bulk counterparts, revealing the feasibility of suggested route in the preservation of nanostructure and enhanced phonon scattering.

  12. High Resolution Dopant Profiles Revealed by Atom Probe Tomography and STEM-EBIC for CdTe Based Solar Cells

    SciTech Connect

    Poplawsky, Jonathan D.; Li, Chen; Paudel, Naba; Guo, Wei; Yan, Yanfa; Pennycook, Stephen J.

    2016-01-01

    Segregated elements and their diffusion profiles within grain boundaries and interfaces resulting from post deposition heat treatments are revealed using atom probe tomography (APT), scanning transmission electron microscopy (STEM), and electron beam induced current (EBIC) techniques. The results demonstrate how these techniques complement each other to provide conclusive evidence for locations of space charge regions and mechanisms that create them at the nanoscale. Most importantly, a Cl dopant profile that extends ~5 nm into CdTe grains interfacing the CdS is shown using APT and STEM synergy, which has been shown to push the pn-junction into the CdTe layer indicative of a homojunction (revealed by STEM EBIC). In addition, Cu and Cl concentrations within grain boundaries within several nms and µms from the CdS/CdTe interface are compared, Na segregation of <0.1% is detected, and S variations of ~1–3% are witnessed between CdTe grains close to the CdS/CdTe interface. The segregation and diffusion of these elements directly impacts on the material properties, such as band gap energy and n/p type properties. Optimization of the interfacial and grain boundary doping will lead to higher efficiency solar cells.

  13. Enhanced power factor and high-pressure effects in (Bi,Sb){sub 2}(Te,Se){sub 3} thermoelectrics

    SciTech Connect

    Ovsyannikov, Sergey V. E-mail: sergey2503@gmail.com; Morozova, Natalia V.; Korobeinikov, Igor V.; Vokhmyanin, Alexander P.; Shchennikov, Vladimir V.; Lukyanova, Lidia N.; Usov, Oleg A.; Kutasov, Vsevolod A.; Manakov, Andrey Y.; Likhacheva, Anna Y.; Ancharov, Alexey I.; Berger, Ivan F.; Kulbachinskii, Vladimir A.; Okada, Taku

    2015-04-06

    We investigated the effects of applied high pressure on thermoelectric, electric, structural, and optical properties of single-crystalline thermoelectrics, Bi{sub 2}Te{sub 3}, Bi{sub x}Sb{sub 2−x}Te{sub 3} (x = 0.4, 0.5, 0.6), and Bi{sub 2}Te{sub 2.73}Se{sub 0.27} with the high thermoelectric performance. We established that moderate pressure of about 2–4 GPa can greatly enhance the thermoelectric power factor of all of them. X-ray diffraction and Raman studies on Bi{sub 2}Te{sub 3} and Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} found anomalies at similar pressures, indicating a link between crystal structure deformation and physical properties. We speculate about possible mechanisms of the power factor enhancement and suppose that pressure/stress tuning can be an effective tool for the optimization of the thermoelectric performance.

  14. High Resolution Dopant Profiles Revealed by Atom Probe Tomography and STEM-EBIC for CdTe Based Solar Cells

    DOE PAGES [OSTI]

    Poplawsky, Jonathan D.; Li, Chen; Paudel, Naba; Guo, Wei; Yan, Yanfa; Pennycook, Stephen J.

    2016-01-01

    Segregated elements and their diffusion profiles within grain boundaries and interfaces resulting from post deposition heat treatments are revealed using atom probe tomography (APT), scanning transmission electron microscopy (STEM), and electron beam induced current (EBIC) techniques. The results demonstrate how these techniques complement each other to provide conclusive evidence for locations of space charge regions and mechanisms that create them at the nanoscale. Most importantly, a Cl dopant profile that extends ~5 nm into CdTe grains interfacing the CdS is shown using APT and STEM synergy, which has been shown to push the pn-junction into the CdTe layer indicative ofmore » a homojunction (revealed by STEM EBIC). In addition, Cu and Cl concentrations within grain boundaries within several nms and µms from the CdS/CdTe interface are compared, Na segregation of <0.1% is detected, and S variations of ~1–3% are witnessed between CdTe grains close to the CdS/CdTe interface. The segregation and diffusion of these elements directly impacts on the material properties, such as band gap energy and n/p type properties. Optimization of the interfacial and grain boundary doping will lead to higher efficiency solar cells.« less

  15. Core-shell ITO/ZnO/CdS/CdTe nanowire solar cells

    SciTech Connect

    Williams, B. L.; Phillips, L.; Major, J. D.; Durose, K.; Taylor, A. A.; Mendis, B. G.; Bowen, L.

    2014-02-03

    Radial p-n junction nanowire (NW) solar cells with high densities of CdTe NWs coated with indium tin oxide (ITO)/ZnO/CdS triple shells were grown with excellent heterointerfaces. The optical reflectance of the devices was lower than for equivalent planar films by a factor of 100. The best efficiency for the NW solar cells was ??=?2.49%, with current transport being dominated by recombination, and the conversion efficiencies being limited by a back contact barrier (?{sub B}?=?0.52?eV) and low shunt resistances (R{sub SH}?

  16. Experimental investigation of spin-orbit coupling in n-type PbTe quantum wells

    SciTech Connect

    Peres, M. L.; Monteiro, H. S.; Castro, S. de; Chitta, V. A.; Oliveira, N. F.; Mengui, U. A.; Rappl, P. H. O.; Abramof, E.; Maude, D. K.

    2014-03-07

    The spin-orbit coupling is studied experimentally in two PbTe quantum wells by means of weak antilocalization effect. Using the Hikami-Larkin-Nagaoka model through a computational global optimization procedure, we extracted the spin-orbit and inelastic scattering times and estimated the strength of the zero field spin-splitting energy ?{sub so}. The values of ?{sub so} are linearly dependent on the Fermi wave vector (k{sub F}) confirming theoretical predictions of the existence of large spin-orbit coupling in IV-VI quantum wells originated from pure Rashba effect.

  17. Heavy Higgs bosons and the 2 TeV $W'$ boson

    DOE PAGES [OSTI]

    Dobrescu, Bogdan A.; Liu, Zhen

    2015-10-19

    The hints from the LHC for the existence of a W' boson of mass around 1.9 TeV point towards a certain SU(2) L × SU(2) R × U(1) B-L gauge theory with an extended Higgs sector. We show that the decays of the W' boson into heavy Higgs bosons have sizable branching fractions. Interpreting the ATLAS excess events in the search for same-sign lepton pairs plus b jets as arising from W' cascade decays, we then estimate that the masses of the heavy Higgs bosons are in the 400-700 GeV range.

  18. Quantum Anomalous Hall Effect in Hg_1-yMn_yTe Quantum Wells

    SciTech Connect

    Liu, Chao-Xing; Qi, Xiao-Liang; Dai, Xi; Fang, Zhong; Zhang, Shou-Cheng; /Stanford U., Phys. Dept.

    2010-03-19

    The quantum Hall effect is usually observed when the two-dimensional electron gas is subjected to an external magnetic field, so that their quantum states form Landau levels. In this work we predict that a new phenomenon, the quantum anomalous Hall effect, can be realized in Hg{sub 1-y}Mn{sub y}Te quantum wells, without the external magnetic field and the associated Landau levels. This effect arises purely from the spin polarization of the Mn atoms, and the quantized Hall conductance is predicted for a range of quantum well thickness and the concentration of the Mn atoms. This effect enables dissipationless charge current in spintronics devices.

  19. Standard model explanations for the NuTeV electroweak measurements

    SciTech Connect

    R. H. Bernstein

    2003-12-23

    The NuTeV Collaboration has measured the electroweak parameters sin{sup 2} {theta}{sub W} and {rho} in neutrino-nucleon deep-inelastic scattering using a sign-selected beam. The nearly pure {nu} or {bar {nu}} beams that result provide many of the cancellations of systematics associated with the Paschos-Wolfenstein relation. The extracted result for sin{sup 2} {theta}{sub W}(on-shell) = 1 - M{sub W}{sup 2}/M{sub Z}{sup 2} is three standard deviations from prediction. We discuss Standard Model explanations for the puzzle.

  20. High-pressure, transport, and thermodynamic properties of CeTe3

    SciTech Connect

    Zocco, D.A.

    2010-02-24

    We have performed high-pressure, electrical resistivity, and specific heat measurements on CeTe3 single crystals. Two magnetic phases with nonparallel magnetic easy axes were detected in electrical resistivity and specific heat at low temperatures. We also observed the emergence of an additional phase at high pressures and low temperatures and a possible structural phase transition detected at room temperature and at 45 kbar, which can possibly be related with the lowering of the charge-density wave transition temperature known for this compound.

  1. Charge ordering in stoichiometric FeTe: Scanning tunneling microscopy and spectroscopy

    DOE PAGES [OSTI]

    Li, Wei; Yin, Wei -Guo; Wang, Lili; He, Ke; Ma, Xucun; Xue, Qi -Kun; Chen, Xi

    2016-01-04

    In this study, we use scanning tunneling microscopy and spectroscopy to reveal a unique stripy charge order in a parent phase of iron-based superconductors in stoichiometric FeTe epitaxy films. The charge order has unusually the same—usually half—period as the spin order. We also found highly anisotropic electron band dispersions being large and little along the ferromagnetic (crystallographic b) and antiferromagnetic (a) directions, respectively. Our data suggest that the microscopic mechanism is likely of the Stoner type driven by interatomic Coulomb repulsion Vij, and that Vij and charge fluctuations, so far much neglected, are important to the understanding of iron-based superconductors.

  2. Nanoscale structure in AgSbTe2 determined by diffuse elastic neutron scattering

    SciTech Connect

    Specht, Eliot D [ORNL; Ma, Jie [ORNL; Delaire, Olivier A [ORNL; Budai, John D [ORNL; May, Andrew F [ORNL; Karapetrova, Evguenia A. [Argonne National Laboratory (ANL)

    2015-01-01

    Diffuse elastic neutron scattering measurements confirm that AgSbTe2 has a hierarchical structure, with defects on length scales from nanometers to microns. While scattering from mesoscale structure is consistent with previously-proposed structures in which Ag and Sb order on a NaCl lattice, more diffuse scattering from nanoscale structure suggests a structural rearrangement in which hexagonal layers form a combination of (ABC), (ABA), and (AAB) stacking sequences. The AgCrSe2 structure is the best-fitting model for the local atomic arrangements.

  3. Ab initio study of the structural, electronic and optical properties of ZnTe compound

    SciTech Connect

    Bahloul, B.; Deghfel, B.; Amirouche, L.; Bounab, S.; Bentabet, A.; Bouhadda, Y.; Fenineche, N.

    2015-03-30

    Structural, electronic and optical properties of ZnTe compound were calculated using Density Functional Theory (DFT) based on the pseudopotentials and planewaves (PP-PW) method as implemented in the ABINIT computer code, where the exchange–correlation functional is approximated using the local density approximation (LDA) and the generalized gradient approximation (GGA). The obtained results from either LDA or GGa calculation for lattice parameter, energy band gap and optical parameters, such as the fundamental absorption edge, the peaks observed in the imaginary part of the dielectric function, the macroscopic dielectric constants and the optical dielectric constant, are compared with the available theoretical results and experimental data.

  4. Shell model calculation for Te and Sn isotopes in the vicinity of {sup 100}Sn

    SciTech Connect

    Yakhelef, A.; Bouldjedri, A.

    2012-06-27

    New Shell Model calculations for even-even isotopes {sup 104-108}Sn and {sup 106,108}Te, in the vicinity of {sup 100}Sn have been performed. The calculations have been carried out using the windows version of NuShell-MSU. The two body matrix elements TBMEs of the effective interaction between valence nucleons are obtained from the renormalized two body effective interaction based on G-matrix derived from the CD-bonn nucleon-nucleon potential. The single particle energies of the proton and neutron valence spaces orbitals are defined from the available spectra of lightest odd isotopes of Sb and Sn respectively.

  5. Conductive atomic force microscopy study of local electronic transport in ZnTe thin films

    SciTech Connect

    Kshirsagar, Sachin D.; Krishna, M. Ghanashyam; Tewari, Surya P.

    2013-02-05

    ZnTe thin films obtained by the electron beam evaporation technique were subjected to thermal annealing at 500 Degree-Sign C for 2 hours. The as deposited films were amorphous but transformed to the crystalline state under influence of the thermal treatment. There is increase in optical absorption due to the heat treatment caused by increase in free carrier concentration. Conductive atomic force microscopy shows the presence of electronic inhomogeneities in the films. This is attributed to local compositional variations in the films. I-V analysis in these systems indicates formation of Schottky junction at the metal semiconductor (M-S) interface.

  6. Quantum Hall effect in HgTe quantum wells at nitrogen temperatures

    SciTech Connect

    Kozlov, D. A. Kvon, Z. D.; Mikhailov, N. N.; Dvoretskii, S. A.; Weishäupl, S.; Krupko, Y.; Portal, J.-C.

    2014-09-29

    We report on the observation of quantized Hall plateaus in a system of two-dimensional Dirac fermions, implemented in a 6.6 nm HgTe quantum well at magnetic fields up to 34 T at nitrogen temperatures. The activation energies determined from the temperature dependence of the longitudinal resistivity are found to be almost equal for the filling factors ν of 1 and 2. This indicates that the large values of the g-factor (about 30–40) remain unchanged at very strong magnetic fields.

  7. Technical evaluation of Solar Cells, Inc., CdTe module and array at NREL

    SciTech Connect

    Kroposki, B.; Strand, T.; Hansen, R.; Powell, R.; Sasala, R.

    1996-05-01

    The Engineering and Technology Validation Team at the National Renewable Energy Laboratory (NREL) conducts in-situ technical evaluations of polycrystalline thin-film photovoltaic (PV) modules and arrays. This paper focuses on the technical evaluation of Solar Cells, Inc., (SCI) cadmium telluride (CdTe) module and array performance by attempting to correlate individual module and array performance. This is done by examining the performance and stability of the modules and array over a period of more than one year. Temperature coefficients for module and array parameters (P{sub max}, V{sub oc}, V{sub max}, I{sub sc}, I{sub max}) are also calculated.

  8. Morphology, electrical, and optical properties of heavily doped ZnTe:Cu thin films

    SciTech Connect

    El Akkad, Fikry; Abdulraheem, Yaser

    2013-11-14

    We report on a study of the physical properties of ZnTe:Cu films with Cu content up to ∼12 at. % prepared using rf magnetron sputtering. The composition and lateral homogeneities are studied using X-ray photoelectron spectroscopy (XPS). Atomic force microscopy measurements on films deposited at different substrate temperatures (up to 325 °C) yielded activation energy of 12 kJ/mole for the grains growth. The results of XPS and electrical and optical measurements provide evidence for the formation of the ternary zinc copper telluride alloy in films containing Cu concentration above ∼4 at. %. The XPS results suggest that copper is incorporated in the alloy with oxidation state Cu{sup 1+} so that the alloy formula can be written Zn{sub 1−y}Cu{sub y} Te with y = 2−x, where x is a parameter measuring the stoichiometry in the Cu site. The formation of this alloy causes appreciable shift in the binding energies of the XPS peaks besides an IR shift in the energy band gap. Detailed analysis of the optical absorption data revealed the presence of two additional transitions, besides the band gap one, originating from the Γ{sub 8} and Γ{sub 7} (spin-orbit) valence bands to a donor level at ∼0.34 eV below the Γ{sub 6} conduction band. This interpretation yields a value for the valence band splitting energy Δ≅ 0.87 eV independent of copper concentration. On the other hand, the mechanism of formation of the alloy is tentatively explained in terms of a point defect reaction in which substitutional Cu defect Cu{sub Zn} is also created. Assuming that substitutional Cu is the dominant acceptor in the Zn rich alloy as in ZnTe, its formation energy was determined to be 1.7 eV close to the theoretical value (1.41 eV) in ZnTe.

  9. TeV-scale gauged B-L symmetry with inverse seesaw mechanism

    SciTech Connect

    Khalil, Shaaban

    2010-10-01

    We propose a modified version of the TeV-scale B-L extension of the standard model, where neutrino masses are generated through the inverse seesaw mechanism. We show that heavy neutrinos in this model can be accessible via clean signals at the LHC. The search for the extra gauge boson Z{sub B-L}{sup '} through the decay into dileptons or two dileptons plus missing energy is studied. We also show that the B-L extra Higgs boson can be directly probed at the LHC via a clean dilepton and missing energy signal.

  10. Connecting thermoelectric performance and topological-insulator behavior: Bi2Te3 and Bi2Te2Se from first principles

    SciTech Connect

    Shi, Hongliang; Parker, David S.; Du, Mao-Hua; Singh, David J.

    2015-01-20

    Thermoelectric performance is of interest for numerous applications such as waste-heat recovery and solid-state energy conversion and will be seen to be closely connected to topological-insulator behavior. In this paper, we here report first-principles transport and defect calculations for Bi2Te2Se in relation to Bi2Te3. The two compounds are found to contain remarkably different electronic structures in spite of being isostructural and isoelectronic. We also discuss these results in terms of the topological-insulator characteristics of these compounds.

  11. Microstructures, magnetic and electric properties of diluted magnetic semiconductors InTe{sub 1?x} Fe{sub x} (Co{sub x})

    SciTech Connect

    El-Sayed, Karimat; Sedeek, K.; Heiba, Z.K.; Hantour, H.H.

    2013-06-01

    Highlights: ? The prepared InTe{sub 0.9}Fe{sub 0.1} was found to be ferromagnetic at room temperature and can be characterized as diluted magnetic semiconductors. ? The presence of staking faults, various types of defects, strained lattice, grain boundaries and the impurity of minor non-magnetic phase were suggested to participate in high temperature ferromagnetism. - Abstract: InTe compound doped by 10% of Fe or Co respectively was synthesized. X-ray diffraction (XRD), transmission electron microscope (TEM), scanning electron microscope (SEM), energy dispersive X-ray (EDX), vibrating sample magnetometer (VSM) and Kiethley electrometer were used for characterizing the prepared samples. XRD show the presence of InTe{sub 0.9}Fe{sub 0.1} or InTe{sub 0.9}Co{sub 0.1} together with minor In{sub 4}Te{sub 3} phase. InTe{sub 0.9}Fe{sub 0.1} is ferromagnetic with high Curie and high blocking temperature, while InTe{sub 0.9}Co{sub 0.1} is antiferromagnetic with two high Neels temperatures. ?RT of InTe{sub 0.9}Fe{sub 0.1} and InTe{sub 0.9}Co{sub 0.1} are greater than those of InTe. The higher conductivity is due to the higher carrier's density obtained from the interaction of the sp-d orbitals, of the electric and magnetic system. The presence of In{sub 4}Te{sub 3} minor phase and different kinds of defects are taking major roles in the formation of high Tc ferromagnetism and antiferromagnetism.

  12. Reduction of surface leakage current by surface passivation of CdZn Te and other materials using hyperthermal oxygen atoms

    DOEpatents

    Hoffbauer, Mark A.; Prettyman, Thomas H.

    2001-01-01

    Reduction of surface leakage current by surface passivation of Cd.sub.1-x Zn.sub.x Te and other materials using hyperthermal oxygen atoms. Surface effects are important in the performance of CdZnTe room-temperature radiation detectors used as spectrometers since the dark current is often dominated by surface leakage. A process using high-kinetic-energy, neutral oxygen atoms (.about.3 eV) to treat the surface of CdZnTe detectors at or near ambient temperatures is described. Improvements in detector performance include significantly reduced leakage current which results in lower detector noise and greater energy resolution for radiation measurements of gamma- and X-rays, thereby increasing the accuracy and sensitivity of measurements of radionuclides having complex gamma-ray spectra, including special nuclear materials.

  13. Search for Quark Compositeness with the Dijet Centrality Ratio in $pp$ Collisions at $\\sqrt{s}=7$ TeV

    SciTech Connect

    Khachatryan, Vardan; et al.

    2010-12-01

    A search for quark compositeness in the form of quark contact interactions, based on hadronic jet pairs (dijets) produced in proton-proton collisions at sqrt(s)=7 TeV, is described. The data sample of the study corresponds to an integrated luminosity of 2.9 inverse picobarns collected with the CMS detector at the LHC. The dijet centrality ratio, which quantifies the angular distribution of the dijets, is measured as a function of the invariant mass of the dijet system and is found to agree with the predictions of the Standard Model. A statistical analysis of the data provides a lower limit on the energy scale of quark contact interactions. The sensitivity of the analysis is such that the expected limit is 2.9 TeV; because the observed value of the centrality ratio at high invariant mass is below the expectation, the observed limit is 4.0 TeV at the 95% confidence level.

  14. Electronic structure of titanium dichalcogenides TiX{sub 2} (X = S, Se, Te)

    SciTech Connect

    Shkvarin, A. S. Yarmoshenko, Yu. M.; Skorikov, N. A.; Yablonskikh, M. V.; Merentsov, A. I.; Shkvarina, E. G.; Titov, A. N.

    2012-01-15

    The electronic structure and the chemical bond in titanium dichalcogenides TiX{sub 2} (X = S, Se, Te), which are promising electrode materials for lithium batteries, are studied experimentally and theoretically. It is found that the X-ray photoelectron spectra of the valence bands and the core levels of titanium and its X-ray L{sub 2,3} absorption spectra demonstrate a change in the ionic and covalent components of the chemical bond in these compounds. The densities of states in these compounds are calculated by the full-potential augmented-plane-wave method, and multiplet calculations of the X-ray L{sub 2,3} absorption spectra of titanium are performed. It is shown that, in the row TiS{sub 2}-TiSe{sub 2}-TiTe{sub 2}, the covalence increases, the ionicity of the chemical bond decreases, and the effect of the crystal field of a ligand is weakened.

  15. Nanosecond laser-induced phase transitions in pulsed laser deposition-deposited GeTe films

    SciTech Connect

    Sun, Xinxing Thelander, Erik; Lorenz, Pierre; Gerlach, Jürgen W.; Decker, Ulrich; Rauschenbach, Bernd

    2014-10-07

    Phase transformations between amorphous and crystalline states induced by irradiation of pulsed laser deposition grown GeTe thin films with nanosecond laser pulses at 248 nm and pulse duration of 20 ns are studied. Structural and optical properties of the Ge-Te phase-change films were studied by X-ray diffraction and optical reflectivity measurements as a function of the number of laser pulses between 0 and 30 pulses and of the laser fluence up to 195 mJ/cm². A reversible phase transition by using pulse numbers ≥ 5 at a fluence above the threshold fluence between 11 and 14 mJ/cm² for crystallization and single pulses at a fluence between 162 and 182 mJ/cm² for amorphization could be proved. For laser fluences from 36 up to 130 mJ/cm², a high optical contrast of 14.7% between the amorphous and crystalline state is measured. A simple model is used that allows the discussion on the distribution of temperature in dependency on the laser fluence.

  16. Atomic and electronic structure of Lomer dislocations at CdTe bicrystal interface

    DOE PAGES [OSTI]

    Sun, Ce; Paulauskas, Tadas; Sen, Fatih G.; Lian, Guoda; Wang, Jinguo; Buurma, Christopher; Chan, Maria K. Y.; Klie, Robert F.; Kim, Moon J.

    2016-06-03

    Extended defects are of considerable importance in determining the electronic properties of semiconductors, especially in photovoltaics (PVs), due to their effects on electron-hole recombination. We employ model systems to study the effects of dislocations in CdTe by constructing grain boundaries using wafer bonding. Atomic-resolution scanning transmission electron microscopy (STEM) of a [1–10]/ (110) 4.8° tilt grain boundary reveals that the interface is composed of three distinct types of Lomer dislocations. Geometrical phase analysis is used to map strain fields, while STEM and density functional theory (DFT) modeling determine the atomic structure at the interface. The electronic structure of the dislocationmore » cores calculated using DFT shows significant mid-gap states and different charge-channeling tendencies. Cl-doping is shown to reduce the midgap states, while maintaining the charge separation effects. In conclusion, this report offers novel avenues for exploring grain boundary effects in CdTe-based solar cells by fabricating controlled bicrystal interfaces and systematic atomic-scale analysis.« less

  17. Measurement of the atmospheric muon charge ratio at TeV energies with MINOS

    SciTech Connect

    Adamson, P.; Andreopoulos, C.; Arms, K.E.; Armstrong, R.; Auty, D.J.; Avvakumov, S.; Ayres, D.S.; Baller, B.; Barish, B.; Barnes, P.D., Jr.; Barr, G.; /Fermilab /University Coll. London /Rutherford /Minnesota U. /Indiana U. /Sussex U. /Stanford U., Phys. Dept. /Argonne /Caltech /LLNL, Livermore /Oxford U.

    2007-05-01

    The 5.4 kton MINOS far detector has been taking charge-separated cosmic ray muon data since the beginning of August, 2003 at a depth of 2070 m.w.e. in the Soudan Underground Laboratory, Minnesota, USA. The data with both forward and reversed magnetic field running configurations were combined to minimize systematic errors in the determination of the underground muon charge ratio. When averaged, two independent analyses find the charge ratio underground to be N{sub {mu}}+/N{sub {mu}}-=1.374{+-}0.004(stat)-0.010{sup +0.012}(sys). Using the map of the Soudan rock overburden, the muon momenta as measured underground were projected to the corresponding values at the surface in the energy range 1-7 TeV. Within this range of energies at the surface, the MINOS data are consistent with the charge ratio being energy independent at the 2 standard deviation level. When the MINOS results are compared with measurements at lower energies, a clear rise in the charge ratio in the energy range 0.3-1.0 TeV is apparent. A qualitative model shows that the rise is consistent with an increasing contribution of kaon decays to the muon charge ratio.

  18. Study of the effect of the stress on CdTe nuclear detectors

    SciTech Connect

    Ayoub, M.; Radley, I.; Mullins, J. T.; Hage-Ali, M.

    2013-09-14

    CdTe detectors are commonly used for X and ? ray applications. The performance of these detectors is strongly affected by different types of mechanical stress; such as that caused by differential expansion between the semiconductor and its intimate metallic contacts and that caused by applied pressure during the bonding process. The aim of this work was to study the effects of stress on the performance of CdTe detectors. A difference in expansion coefficients induces transverse stress under the metallic contact, while contact pressure induces longitudinal stress. These stresses have been simulated by applying known static pressures. For the longitudinal case, the pressure was applied directly to the metallic contact; while in the transverse case, it was applied to the side. We have studied the effect of longitudinal and transverse stresses on the electrical characteristics including leakage current measurements and ?-ray detection performance. We have also investigated induced defects, their nature, activation energies, cross sections, and concentrations under the applied stress by using photo-induced current transient spectroscopy and thermoelectric effect spectroscopy techniques. The operational stress limit is also given.

  19. The search for TeV-scale dark matter with the HAWC observatory

    DOE PAGES [OSTI]

    Harding, J. Patrick

    2015-01-01

    The High Altitude Water Cherenkov (HAWC) observatory is a wide field-of-view detector sensitive to 100 GeV - 100 TeV gamma rays and cosmic rays. Located at an elevation of 4100 m on the Sierra Negra mountain in Mexico, HAWC observes extensive air showers from gamma and cosmic rays with an array of water tanks which produce Cherenkov light in the presence of air showers. With a field-of-view capable of observing 2/3 of the sky each day, and a sensitivity of 1 Crab/day, HAWC will be able to map out the sky in gamma and cosmic rays in detail. In thismore » paper, we discuss the capabilities of HAWC to map out the directions and spectra of TeV gamma rays and cosmic rays coming from sources of dark matter annihilation. We discuss the HAWC sensitivity to multiple extended sources of dark matter annihilation and the possibility of HAWC observations of annihilations in nearby dark matter subhalos.« less

  20. Magnetic Correlations in the Quasi-Two-Dimensional Semiconducting Ferromagnet CrSiTe3

    DOE PAGES [OSTI]

    Williams, Travis J.; Aczel, Adam A.; Lumsden, Mark D.; Nagler, Stephen E.; Stone, Matthew B.; Yan, Jiaqiang -Q.; Mandrus, D.

    2015-10-02

    Intrinsic, 2D ferromagnetic semiconductors are an important class of materials for overcoming dilute magnetic semiconductors’ limitations for spintronics. CrSiTe3 is a particularly interesting material of this class, since it can likely be exfoliated to single layers, for which Tc is predicted to increase dramatically. Establishing the nature of the bulk material’s magnetism is necessary for understanding the thin-film magnetic behavior and the material’s possible applications. In this work, we use elastic and inelastic neutron scattering to measure the magnetic properties of single crystalline CrSiTe3. We find a very small single ion anisotropy that favors magnetic ordering along the c-axis andmore » that the measured spin waves fit well to a model in which the moments are only weakly coupled along that direction. Then, we find that both static and dynamic correlations persist within the ab-plane up to at least 300 K, which is strong evidence of the material's 2D characteristics that are relevant for future studies on thin film and monolayer samples.« less

  1. Experimental observation of spin-dependent electron many-body effects in CdTe

    SciTech Connect

    Horodysk, P.; N?mec, P. Novotn, T.; Trojnek, F.; Mal, P.

    2014-08-07

    In semiconductors, the spin degree of freedom is usually disregarded in the theoretical treatment of electron many-body effects such as band-gap renormalization and screening of the Coulomb enhancement factor. Nevertheless, as was observed experimentally in GaAs, not only the single-particle phase-space filling but also many-body effects are spin sensitive. In this paper, we report on time- and polarization-resolved differential transmission pump-probe measurements in CdTe, which has the same zincblende crystal structure but different material parameters compared to that of GaAs. We show experimentally that at room temperature in CdTeunlike in GaAsthe pump-induced decrease of transmission due to the band-gap renormalization can even exceed the transmission increase due to the phase-space filling, which enables to measure directly the spin-sensitivity of the band-gap renormalization. We also observed that the influence of the band-gap renormalization is more prominent at low temperatures.

  2. Nanoscale imaging of photocurrent and efficiency in CdTe solar cells

    DOE PAGES [OSTI]

    Leite, Marina S.; National Inst. of Standards and Technology; Abashin, Maxim; National Inst. of Standards and Technology; Lezec, Henri J.; Gianfrancesco, Anthony; Talin, A. Alec; Sandia National Lab.; Zhitenev, Nikolai B.

    2014-10-15

    The local collection characteristics of grain interiors and grain boundaries in thin film CdTe polycrystalline solar cells are investigated using scanning photocurrent microscopy. The carriers are locally generated by light injected through a small aperture (50-300 nm) of a near-field scanning optical microscope in an illumination mode. Possible influence of rough surface topography on light coupling is examined and eliminated by sculpting smooth wedges on the granular CdTe surface. By varying the wavelength of light, nanoscale spatial variations in external quantum efficiency are mapped. We find that the grain boundaries (GBs) are better current collectors than the grain interiors (GIs).more » The increased collection efficiency is caused by two distinct effects associated with the material composition of GBs. First, GBs are charged, and the corresponding built-in field facilitates the separation and the extraction of the photogenerated carriers. Second, the GB regions generate more photocurrent at long wavelength corresponding to the band edge, which can be caused by a smaller local band gap. As a result, resolving carrier collection with nanoscale resolution in solar cell materials is crucial for optimizing the polycrystalline device performance through appropriate thermal processing and passivation of defect and surfaces.« less

  3. Nanoscale imaging of photocurrent and efficiency in CdTe solar cells

    SciTech Connect

    Leite, Marina S.; Abashin, Maxim; Lezec, Henri J.; Gianfrancesco, Anthony; Talin, A. Alec; Zhitenev, Nikolai B.

    2014-10-15

    The local collection characteristics of grain interiors and grain boundaries in thin film CdTe polycrystalline solar cells are investigated using scanning photocurrent microscopy. The carriers are locally generated by light injected through a small aperture (50-300 nm) of a near-field scanning optical microscope in an illumination mode. Possible influence of rough surface topography on light coupling is examined and eliminated by sculpting smooth wedges on the granular CdTe surface. By varying the wavelength of light, nanoscale spatial variations in external quantum efficiency are mapped. We find that the grain boundaries (GBs) are better current collectors than the grain interiors (GIs). The increased collection efficiency is caused by two distinct effects associated with the material composition of GBs. First, GBs are charged, and the corresponding built-in field facilitates the separation and the extraction of the photogenerated carriers. Second, the GB regions generate more photocurrent at long wavelength corresponding to the band edge, which can be caused by a smaller local band gap. As a result, resolving carrier collection with nanoscale resolution in solar cell materials is crucial for optimizing the polycrystalline device performance through appropriate thermal processing and passivation of defect and surfaces.

  4. Hidden extra U(1) at the electroweak/TeV scale

    SciTech Connect

    Grossmann, B. N.; Rai, Santosh Kumar; McElrath, B.; Nandi, S.

    2010-09-01

    We propose a simple extension of the standard model (SM) by adding an extra U(1) symmetry which is hidden from the SM sector. Such a hidden U(1) has not been considered before, and its existence at the TeV scale can be explored at the LHC. This hidden U(1) does not couple directly to the SM particles, and couples only to new SU(2){sub L} singlet exotic quarks and singlet Higgs bosons, and is broken at the TeV scale. The dominant signals at the high-energy hadron colliders are multilepton and multi-b-jet final states with or without missing energy. We calculate the signal rates as well as the corresponding standard model background for these final states. A very distinctive signal is 6 high p{sub T} b-jets in the final state with no missing energy. For a wide range of the exotic quarks masses the signals are observable above the background at the LHC.

  5. Magnetic Correlations in the Quasi-2D Semiconducting Ferromagnet CrSiTe3

    DOE PAGES [OSTI]

    Williams, Travis J.; Aczel, Adam A.; Lumsden, Mark D.; Nagler, Stephen E.; Stone, Matthew B.; Yan, Jiaqiang; Mandrus, D.

    2015-10-02

    Intrinsic, two-dimensional ferromagnetic semiconductors are an important class of materials for overcoming the limitations of dilute magnetic semiconductors for spintronics applications. CrSiTe3 is a particularly interesting member of this class, since it can likely be exfoliated down to single layers, where Tc is predicted to increase dramatically. Establishing the nature of the magnetism in the bulk is a necessary precursor to understanding the magnetic behavior in thin film samples and the possible applications of this material. In this work, we use elastic and inelastic neutron scattering to measure the magnetic properties of single crystalline CrSiTe3. We find that there ismorea very small single ion anisotropy favoring magnetic ordering along the c-axis and that the measured spin waves fit well to a model where the moments are only weakly coupled along that direction. Finally, we find that both static and dynamic correlations persist within the ab-plane up to at least 300 K, strong evidence of this material's two-dimensional characteristics that are relevant for future studies on thin film and monolayer samples.less

  6. Magnetic microstructure and magnetic properties of uniaxial itinerant ferromagnet Fe3GeTe2

    DOE PAGES [OSTI]

    León-Brito, Neliza; Bauer, Eric Dietzgen; Ronning, Filip; Thompson, Joe David; Movshovich, Roman

    2016-08-26

    Here, magnetic force microscopy was used to observe the magnetic microstructure of Fe3GeTe2 at 4 K on the (001) surface. The surface magnetic structure consists of a two-phase domain branching pattern that is characteristic for highly uniaxial magnets in the plane perpendicular to the magnetic easy axis. The average surface magnetic domain width Ds = 1.3 μm determined from this pattern, in combination with intrinsic properties calculated from bulk magnetization data (the saturation magnetization Ms = 376 emu/cm3 and the uniaxial magnetocrystalline anisotropy constant Ku = 1.46 × 107 erg/cm3), was used to determine the following micromagnetic parameters for Fe3GeTe2more » from phenomenological models: the domain wall energy γw = 4.7 erg/cm2, the domain wall thickness δw = 2.5 nm, the exchange stiffness constant Aex = 0.95 × 10–7 erg/cm, the exchange length lex = 2.3 nm, and the critical single domain particle diameter dc = 470 nm.« less

  7. Dynamics of photoexcited carrier relaxation and recombination in CdTe/CdS thin films

    SciTech Connect

    Levi, D.H.; Fluegel, B.D.; Ahrenkiel, R.K.

    1996-05-01

    Efficiency-limiting defects in photovoltaic devices are readily probed by time-resolved spectroscopy. This paper presents the first direct optical measurements of the relaxation and recombination pathways of photoexcited carriers in the CdS window layer of CdTe/CdS polycrystalline thin films. Femtosecond time-resolved pump/probe measurements indicate the possible existence of a two-phase CdS/CdSTe layer, rather than a continuously graded alloy layer at the CdTe/CdS interface. Complementary time-resolved photoluminescence (PL) measurements show that the photoexcited carriers are rapidly captured by deep-level defects. The temporal and density-dependent properties of the photoluminescence prove that the large Stokes shift of the PL relative to the band edge is due to strong phonon coupling to deep-level defects in CdS. The authors suggest that modifications in the CdS processing may enhance carrier collection efficiency in the blue spectral region.

  8. In-situ characterization of the optical and electronic properties in GeTe and GaSb thin films

    SciTech Connect

    Velea, A.; Popescu, M.; Galca, A. C.; Socol, G.

    2015-10-07

    GeTe and GaSb thin films obtained by pulsed laser deposition were investigated by spectroscopic ellipsometry at controlled temperatures. The GeTe films were fully amorphous, while the GaSb films were partially crystalized in the as-deposited state. The Tauc-Lorentz model was employed to fit the experimental data. From the temperature study of the optical constants, it was observed the crystallization in the 150–160 °C range of GeTe amorphous films and between 230 and 240 °C of GaSb amorphous phase. A second transition in the resonance energy and the broadening parameter of the Lorentz oscillator was observed due to the crystallization of Sb after 250 °C. The temperatures of 85 °C and 130 °C are noticed as the start of the relaxation of the amorphous GeTe phase and as-deposited GaSb. The peaks of the imaginary part of the dielectric function red shifted after the phase change, while the variation with temperature of the crystalline phase follows the Varshni law. The electron-phonon coupling constants are 2.88 and 1.64 for c-GeTe and c-GaSb, respectively. An optical contrast up to 60% was obtained for GeTe films and a maximum value of 7.5% is revealed in the case GaSb, which is altered by the partial crystallinity of the as-deposited films.

  9. Structural characterization and novel optical properties of defect chalcopyrite ZnGa{sub 2}Te{sub 4} thin films

    SciTech Connect

    Fouad, S.S.; Sakr, G.B.; Yahia, I.S.; Basset, D.M. Abdel

    2011-11-15

    Highlights: {yields} Preparation and characterization of ZnGa{sub 2}Te{sub 4} in powder and thin film forms. {yields} Structure properties such as XRD and EDX. {yields} Optical constant of the as-deposited ZnGa{sub 2}Te{sub 4} for the first time. {yields} Extraction of the optical parameters of the studied films. -- Abstract: Stoichiometric thin film samples of the ternary ZnGa{sub 2}Te{sub 4} defect chalcopyrite compound were prepared and characterized by X-ray diffraction technique. The elemental chemical composition of the prepared bulk material as well as of the as-deposited film was determined by energy-dispersive X-ray spectrometry. ZnGa{sub 2}Te{sub 4} thin films were deposited, by conventional thermal evaporation technique onto highly cleaned glass substrates. The X-ray and electron diffraction studies revealed that the as-deposited and the annealed ZnGa{sub 2}Te{sub 4} films at annealing temperature t{sub a} {<=} 548 K are amorphous, while those annealed at t{sub a} {>=} 573 K (for 1 h), are polycrystalline. The optical properties of the as-deposited films have been investigated for the first time at normal incidence in the spectral range from 500 to 2500 nm. The refractive index dispersion in the transmission and low absorption region is adequately described by the Wemple-DiDomenico single oscillator model, whereby, the values of the oscillator parameters have been calculated. The analysis of the optical absorption coefficient revealed an in-direct optical transition with energy of 1.33 eV for the as-deposited sample. This work suggested that ZnGa{sub 2}Te{sub 4} is a good candidate in solar cell devices as an absorbing layer.

  10. Magneto-infrared study of electron-hole system in strained semimetallic HgTe quantum wells

    SciTech Connect

    Vasilyev, Yu. B.; Greshnov, A. A.; Mikhailov, N. N.; Suchalkin, S. D.; Tung, L.-C.; Smirnov, D.; Gouider, F.; Nachtwei, G.

    2013-12-04

    Magneto infrared absorption measurements have been performed on HgTe/CdHgTe quantum wells with different thicknesses grown on (013) GaAs substrate. Cyclotron resonance effective masses, inter-Landau-level transition energies and their dependence on magnetic field are measured. The measured intersubband energies are in good agreement with the theoretically calculated values. Strong spin-orbit interaction is responsible for cyclotron resonance splitting in asymmetric quantum wells. We demonstrate that the increase of the quantum well thickness leads to a semimetallic state, allowing for simultaneous observation of holes and electron transitions.

  11. Direct Analysis of JV-Curves Applied to an Outdoor-Degrading CdTe Module (Presentation)

    SciTech Connect

    Jordan, D; Kurtz, S.; Ulbrich, C.; Gerber, A.; Rau, U.

    2014-03-01

    We present the application of a phenomenological four parameter equation to fit and analyze regularly measured current density-voltage JV curves of a CdTe module during 2.5 years of outdoor operation. The parameters are physically meaningful, i.e. the short circuit current density Jsc, open circuit voltage Voc and differential resistances Rsc, and Roc. For the chosen module, the fill factor FF degradation overweighs the degradation of Jsc and Voc. Interestingly, with outdoor exposure, not only the conductance at short circuit, Gsc, increases but also the Gsc(Jsc)-dependence. This is well explained with an increase in voltage dependent charge carrier collection in CdTe.

  12. Effect of hydrostatic pressure and uniaxial strain on the electronic structure of Pb1-xSnxTe

    SciTech Connect

    Geilhufe, Matthias; Nayak, Sanjeev K.; Thomas, Stefan; Dane, Markus; Tripathi, Gouri S.; Entel, Peter; Hergert, Wolfram; Ernst, Arthur

    2015-12-09

    The electronic structure of Pb1–xSnxTe is studied by using the relativistic Korringa-Kohn-Rostoker Green function method in the framework of density functional theory. For all concentrations x, Pb1–xSnxTe is a direct semiconductor with a narrow band gap. In contrast to pure lead telluride, tin telluride shows an inverted band characteristic close to the Fermi energy. It will be shown that this particular property can be tuned, first, by alloying PbTe and SnTe and, second, by applying hydrostatic pressure or uniaxial strain. Furthermore, the magnitude of strain needed to switch between the regular and inverted band gap can be tuned by the alloy composition. In conclusion, there is a range of potential usage of Pb1–xSnxTe for spintronic applications.

  13. Cross-Sectional Conductive Atomic Force Microscopy of CdTe/CdS Solar Cells: Effects of Etching and Back-Contact Processes; Preprint

    SciTech Connect

    Moutinho, H. R.; Dhere, R. G.; Jiang, C.-S.; Gessert, T. A.; Duda, A. M.; Young, M.; Metzger, W. K.; Li, X.; Al-Jassim, M. M.

    2006-05-01

    We investigated the effects of the etching processes using bromine and nitric-phosphoric acid solutions, as well as of Cu, in the bulk electrical conductivity of CdTe/CdS solar cells using conductive atomic force microscopy (C-AFM). Although the etching process can create a conductive layer on the surface of the CdTe, the layer is very shallow. In contrast, the addition of a thin layer of Cu to the surface creates a conductive layer inside the CdTe that is not uniform in depth, is concentrated at grains boundaries, and may short circuit the device if the CdTe is too thin. The etching process facilitates the Cu diffusion and results in thicker conductive layers. The existence of this inhomogeneous conductive layer directly affects the current transport and is probably the reason for needing thick CdTe in these devices.

  14. Enhancement of thermoelectric performance in n-type PbTe1-ySey by doping Cr and tuning Te:Se ratio

    SciTech Connect

    Chere, Eyob K.; Zhang, Qian; McEnaney, Kenneth; Yao, Mengliang; Cao, Feng; Sun, Jingying; Chen, Shuo; Opeil, Cyril; Chen, Gang; Ren, Zhifeng

    2015-04-01

    Lead telluride and its alloys have been extensively studied for medium temperature thermoelectric applications due to decent figure-of-merit (ZT) at temperature close to 900 K. However, little emphasis has been given to improve the ZT near room temperature. In this investigation, we report a systematic study of Cr doping in PbTe1-ySey with y=0, 0.25, 0.5, 0.75, 0.85, and 1. We found the peak ZT temperature increased with increasing concentration of Se. The highest ZT of ~0.6 at room temperature in Te-rich Cr0.015Pb0.985Te0.75Se0.25 was obtained due to a lowered thermal conductivity and enhanced power factor resulted from high Seebeck coefficient of about -220 µV K-1 and high Hall mobility ~1120 cm2 V-1 s-1 at room temperature. A room temperature ZT of ~0.5 and peak ZT of ~1 at about 573–673 K is shown by Se-rich sample Cr0.01Pb0.99Te0.25Se0.75. This improvement of the room temperature ZTimproved the average ZT over a wide temperature range and could potentially lead to a single leg efficiency of thermoelectric conversion for Te-rich Cr0.015Pb0.985Te0.75Se0.25 up to ~11% and Se-rich Cr0.01Pb0.99Te0.25Se0.75 up to ~13% with cold side and hot side temperature at 300 K and 873 K, respectively, if matched with appropriate p-type legs.

  15. Evaluation of a CdTe semiconductor based compact gamma camera for sentinel lymph node imaging

    SciTech Connect

    Russo, Paolo; Curion, Assunta S.; Mettivier, Giovanni; Esposito, Michela; Aurilio, Michela; Caraco, Corradina; Aloj, Luigi; Lastoria, Secondo

    2011-03-15

    Purpose: The authors assembled a prototype compact gamma-ray imaging probe (MediPROBE) for sentinel lymph node (SLN) localization. This probe is based on a semiconductor pixel detector. Its basic performance was assessed in the laboratory and clinically in comparison with a conventional gamma camera. Methods: The room-temperature CdTe pixel detector (1 mm thick) has 256x256 square pixels arranged with a 55 {mu}m pitch (sensitive area 14.08x14.08 mm{sup 2}), coupled pixel-by-pixel via bump-bonding to the Medipix2 photon-counting readout CMOS integrated circuit. The imaging probe is equipped with a set of three interchangeable knife-edge pinhole collimators (0.94, 1.2, or 2.1 mm effective diameter at 140 keV) and its focal distance can be regulated in order to set a given field of view (FOV). A typical FOV of 70 mm at 50 mm skin-to-collimator distance corresponds to a minification factor 1:5. The detector is operated at a single low-energy threshold of about 20 keV. Results: For {sup 99m}Tc, at 50 mm distance, a background-subtracted sensitivity of 6.5x10{sup -3} cps/kBq and a system spatial resolution of 5.5 mm FWHM were obtained for the 0.94 mm pinhole; corresponding values for the 2.1 mm pinhole were 3.3x10{sup -2} cps/kBq and 12.6 mm. The dark count rate was 0.71 cps. Clinical images in three patients with melanoma indicate detection of the SLNs with acquisition times between 60 and 410 s with an injected activity of 26 MBq {sup 99m}Tc and prior localization with standard gamma camera lymphoscintigraphy. Conclusions: The laboratory performance of this imaging probe is limited by the pinhole collimator performance and the necessity of working in minification due to the limited detector size. However, in clinical operative conditions, the CdTe imaging probe was effective in detecting SLNs with adequate resolution and an acceptable sensitivity. Sensitivity is expected to improve with the future availability of a larger CdTe detector permitting operation at shorter

  16. Superior thermoelectric performance in PbTe-PbS pseudo-binary. Extremely low thermal conductivity and modulated carrier concentration

    SciTech Connect

    Wu, D.; Zhao, L. -D.; Tong, X.; Li, W.; Wu, L.; Tan, Q.; Pei, Y.; Huang, L.; Li, J. -F.; Zhu, Y.; Kanatzidis, M. G.; He, J.

    2015-05-19

    Lead chalcogenides have exhibited their irreplaceable role as thermoelectric materials at the medium temperature range, owing to highly degenerate electronic bands and intrinsically low thermal conductivities. PbTe-PbS pseudo-binary has been paid extensive attentions due to the even lower thermal conductivity which originates largely from the coexistence of both alloying and phase-separated precipitations. To investigate the competition between alloying and phase separation and its pronounced effect on the thermoelectric performance in PbTe-PbS, we systematically studied Spark Plasma Sintered (SPSed), 3 at% Na- doped (PbTe)1-x(PbS)x samples with x=10%, 15%, 20%, 25%, 30% and 35% by means of transmission electron microscopy (TEM) observations and theoretical calculations. Corresponding to the lowest lattice thermal conductivity as a result of the balance between point defect- and precipitates- scattering, the highest figure of merit ZT~2.3 was obtained at 923 K when PbS phase fraction x is at 20%. The consistently lower lattice thermal conductivities in SPSed samples compared with corresponding ingots, resulting from the powdering and follow-up consolidation processes, also contribute to the observed superior ZT. Notably, the onset of carrier concentration modulation ~600 K due to excessive Nas diffusion and re-dissolution leads to the observed saturations of electrical transport properties, which is believed equally crucial to the outstanding thermoelectric performance of SPSed PbTe-PbS samples.

  17. Thermal conductivity of Bi{sub 2}Te{sub 3} tilted nanowires, a molecular dynamics study

    SciTech Connect

    Li, Shen Lacroix, David; Termentzidis, Konstantinos; Chaput, Laurent; Stein, Nicolas; Frantz, Cedric

    2015-06-08

    Evidence for an excellent compromise between structural stability and low thermal conductivity has been achieved with tilted Bi{sub 2}Te{sub 3} nanowires. The latter ones were recently fabricated and there is a need in modeling and characterization. The structural stability and the thermal conductivity of Bi{sub 2}Te{sub 3} nanowires along the tilted [015]* direction and along the [010] direction have been explored. For the two configurations of nanowires, the effect of the length and the cross section on the thermal conductivity is discussed. The thermal conductivity of infinite size tilted nanowire is 0.34?W/m K, significantly reduced compared to nanowire along the [010] direction (0.59?W/m K). This reveals that in Bi{sub 2}Te{sub 3} nanowires the structural anisotropy can be as important as size effects to reduce the thermal conductivity. The main reason is the reduction of the phonon mean free path which is found to be 1.7?nm in the tilted nanowires, compared to 5.3?nm for the nanowires along the [010] direction. The fact that tilted Bi{sub 2}Te{sub 3} nanowire is mechanically stable and it has extremely low thermal conductivity suggests these nanowires as a promising material for future thermoelectric generation application.

  18. Strain induced Z{sub 2} topological insulating state of ?-As{sub 2}Te{sub 3}

    SciTech Connect

    Pal, Koushik; Waghmare, Umesh V.

    2014-08-11

    Topological insulators are non-trivial quantum states of matter which exhibit a gap in the electronic structure of their bulk form, but a gapless metallic electronic spectrum at the surface. Here, we predict a uniaxial strain induced electronic topological transition (ETT) from a band to topological insulating state in the rhombohedral phase (space group: R3{sup }m) of As{sub 2}Te{sub 3} (?-As{sub 2}Te{sub 3}) through first-principles calculations including spin-orbit coupling within density functional theory. The ETT in ?-As{sub 2}Te{sub 3} is shown to occur at the uniaxial strain ?{sub zz}?=??0.05 (?{sub zz}?=?1.77?GPa), passing through a Weyl metallic state with a single Dirac cone in its electronic structure at the ? point. We demonstrate the ETT through band inversion and reversal of parity of the top of the valence and bottom of the conduction bands leading to change in the ?{sub 2} topological invariant ?{sub 0} from 0 to 1 across the transition. Based on its electronic structure and phonon dispersion, we propose ultra-thin films of As{sub 2}Te{sub 3} to be promising for use in ultra-thin stress sensors, charge pumps, and thermoelectrics.

  19. Measurement of the Upsilon(NS) Cross Sections in pp Collisions at √(s) = 7 TeV

    SciTech Connect

    Zheng, Yu

    2012-12-01

    The Υ(nS) production cross sections are measured using a data sample corresponding to an integrated luminosity of 35.8 ± 1.4 pb-1 of proton-proton collisions at √s = 7 TeV, collected with the CMS detector at the CERN LHC.

  20. First Measurement of Hadronic Event Shapes in pp Collisions at sqrt(s)=7 TeV

    SciTech Connect

    Khachatryan, Vardan; et al.

    2011-05-01

    Hadronic event shapes have been measured in proton-proton collisions at sqrt(s)=7 TeV, with a data sample collected with the CMS detector at the LHC. The sample corresponds to an integrated luminosity of 3.2 inverse picobarns. Event-shape distributions, corrected for detector response, are compared with five models of QCD multijet production.

  1. Fully gapped superconductivity in In-doped topological crystalline insulator Pb0.5Sn0.5Te

    DOE PAGES [OSTI]

    Du, Guan; Gu, G. D.; Du, Zengyi; Fang, Delong; Yang, Huan; Zhong, R. D.; Schneeloch, J.; Wen, Hai -Hu

    2015-07-27

    In this study, superconductors derived from topological insulators and topological crystalline insulators by chemical doping have long been considered to be candidates as topological superconductors. Pb0.5Sn0.5Te is a topological crystalline insulator with mirror symmetry protected surface states on (001)-, (011)-, and (111)-oriented surfaces. The superconductor (Pb0.5Sn0.5)0.7In0.3Te is produced by In doping in Pb0.5Sn0.5Te, and is thought to be a topological superconductor. Here we report scanning tunneling spectroscopy measurements of the superconducting state as well as the superconducting energy gap in (Pb0.5Sn0.5)0.7In0.3Te on a (001)-oriented surface. The spectrum can be well fitted by an anisotropic s-wave gap function of Δ =more » 0.72 + 0.18cos4θ meV using Dynes model. The results show that the superconductor seems to be a fully gapped one without any in-gap states, in contradiction with the expectation of a topological superconductor.« less

  2. Direct imaging of Cl- and Cu-induced short-circuit efficiency changes in CdTe solar cells

    DOE PAGES [OSTI]

    Poplawsky, Jonathan D.; Parish, Chad M.; Leonard, Donovan N.; Li, Chen; Paudel, Naba; Yan, Yanfa; Pennycook, Stephen J.

    2014-05-30

    To achieve high-efficiency polycrystalline CdTe-based thin-film solar cells, the CdTe absorbers must go through a post-deposition CdCl2 heat treatment followed by a Cu diffusion step. To better understand the roles of each treatment with regard to improving grains, grain boundaries, and interfaces, CdTe solar cells with and without Cu diffusion and CdCl2 heat treatments are investigated using cross-sectional electron beam induced current, electron backscatter diffraction, and scanning transmission electron microscope techniques. The evolution of the cross-sectional carrier collection profile due to these treatments that cause an increase in short-circuit current and higher open-circuit voltage are identified. Additionally, an increased carriermore » collection in grain boundaries after either/both of these treatments is revealed. The increased current at the grain boundaries is shown to be due to the presence of a space charge region with an intrinsic carrier collection profile width of ≈350 nm. Scanning transmission electron microscope electron-energy loss spectroscopy shows a decreased Te and increased Cl concentration in grain boundaries after treatment, which causes the inversion. Furthermore, each treatment improves the overall carrier collection efficiency of the cell separately, and, therefore, the benefits realized by each treatment are shown to be independent of each other.« less

  3. A measurement of the 2 neutrino double beta decay rate of Te-130 in the CUORICINO experiment

    SciTech Connect

    Kogler, Laura

    2011-11-03

    CUORICINO was a cryogenic bolometer experiment designed to search for neutrinoless double beta decay and other rare processes, including double beta decay with two neutrinos (2{nu}{beta}{beta}). The experiment was located at Laboratori Nazionali del Gran Sasso and ran for a period of about 5 years, from 2003 to 2008. The detector consisted of an array of 62 TeO{sub 2} crystals arranged in a tower and operated at a temperature of #24;10 mK. Events depositing energy in the detectors, such as radioactive decays or impinging particles, produced thermal pulses in the crystals which were read out using sensitive thermistors. The experiment included 4 enriched crystals, 2 enriched with {sup 130}Te and 2 with {sup 128}Te, in order to aid in the measurement of the 2{nu}{beta}{beta} rate. The enriched crystals contained a total of #24;350 g {sup 130}Te. The 128-enriched (130-depleted) crystals were used as background monitors, so that the shared backgrounds could be subtracted from the energy spectrum of the 130- enriched crystals. Residual backgrounds in the subtracted spectrum were fit using spectra generated by Monte-Carlo simulations of natural radioactive contaminants located in and on the crystals. The 2{nu}{beta}{beta} half-life was measured to be T{sup 2{nu}}{sub 1/2} = [9.81{+-} #6;0.96(stat){+-} 0.49(syst)]#2;x10{sup 20} y.

  4. Superior thermoelectric performance in PbTe-PbS pseudo-binary. Extremely low thermal conductivity and modulated carrier concentration

    DOE PAGES [OSTI]

    Wu, D.; Zhao, L. -D.; Tong, X.; Li, W.; Wu, L.; Tan, Q.; Pei, Y.; Huang, L.; Li, J. -F.; Zhu, Y.; et al

    2015-05-19

    Lead chalcogenides have exhibited their irreplaceable role as thermoelectric materials at the medium temperature range, owing to highly degenerate electronic bands and intrinsically low thermal conductivities. PbTe-PbS pseudo-binary has been paid extensive attentions due to the even lower thermal conductivity which originates largely from the coexistence of both alloying and phase-separated precipitations. To investigate the competition between alloying and phase separation and its pronounced effect on the thermoelectric performance in PbTe-PbS, we systematically studied Spark Plasma Sintered (SPSed), 3 at% Na- doped (PbTe)1-x(PbS)x samples with x=10%, 15%, 20%, 25%, 30% and 35% by means of transmission electron microscopy (TEM) observationsmore » and theoretical calculations. Corresponding to the lowest lattice thermal conductivity as a result of the balance between point defect- and precipitates- scattering, the highest figure of merit ZT~2.3 was obtained at 923 K when PbS phase fraction x is at 20%. The consistently lower lattice thermal conductivities in SPSed samples compared with corresponding ingots, resulting from the powdering and follow-up consolidation processes, also contribute to the observed superior ZT. Notably, the onset of carrier concentration modulation ~600 K due to excessive Na’s diffusion and re-dissolution leads to the observed saturations of electrical transport properties, which is believed equally crucial to the outstanding thermoelectric performance of SPSed PbTe-PbS samples.« less

  5. Correlation between the electronic structures and diffusion paths of interstitial defects in semiconductors: The case in CdTe

    SciTech Connect

    Ma, Jie; Yang, Jihui; Da Silva, J. L.F.; Wei, Su-Huai

    2014-10-30

    Using first-principles calculations, we study the diffusions of interstitial defects Cd, Cu, Te, and Cl in CdTe. We find that the diffusion behavior is strongly correlated with the electronic structure of the interstitial diffuser. For Cd and Cu, because the defect state is the non-degenerated slike state under Td symmetry, the diffusions are almost along the [111] directions between the tetrahedral sites, although the diffusion of Cu shows some deviation due to the s - d coupling. The diffusions of the neutral and charged Cd and Cu follow similar paths. However, for Te and Cl atoms, because the defect state is the degenerated p-like state under Td symmetry, large distortions occur. Therefore, the diffusion paths are very different from those of Cd and Cu interstitials, and depend strongly on the charge states of the interstitial atoms. For Te, we find that the distortion is mostly stabilized by the crystal-field splitting, but for Cl, the exchange splitting plays a more important role.

  6. Superior thermoelectric performance in PbTe-PbS pseudo-binary. Extremely low thermal conductivity and modulated carrier concentration

    SciTech Connect

    Wu, D.; Zhao, L. -D.; Tong, X.; Li, W.; Wu, L.; Tan, Q.; Pei, Y.; Huang, L.; Li, J. -F.; Zhu, Y.; Kanatzidis, M. G.; He, J.

    2015-05-19

    Lead chalcogenides have exhibited their irreplaceable role as thermoelectric materials at the medium temperature range, owing to highly degenerate electronic bands and intrinsically low thermal conductivities. PbTe-PbS pseudo-binary has been paid extensive attentions due to the even lower thermal conductivity which originates largely from the coexistence of both alloying and phase-separated precipitations. To investigate the competition between alloying and phase separation and its pronounced effect on the thermoelectric performance in PbTe-PbS, we systematically studied Spark Plasma Sintered (SPSed), 3 at% Na- doped (PbTe)1-x(PbS)x samples with x=10%, 15%, 20%, 25%, 30% and 35% by means of transmission electron microscopy (TEM) observations and theoretical calculations. Corresponding to the lowest lattice thermal conductivity as a result of the balance between point defect- and precipitates- scattering, the highest figure of merit ZT~2.3 was obtained at 923 K when PbS phase fraction x is at 20%. The consistently lower lattice thermal conductivities in SPSed samples compared with corresponding ingots, resulting from the powdering and follow-up consolidation processes, also contribute to the observed superior ZT. Notably, the onset of carrier concentration modulation ~600 K due to excessive Na’s diffusion and re-dissolution leads to the observed saturations of electrical transport properties, which is believed equally crucial to the outstanding thermoelectric performance of SPSed PbTe-PbS samples.

  7. Correlation between the electronic structures and diffusion paths of interstitial defects in semiconductors: The case in CdTe

    DOE PAGES [OSTI]

    Ma, Jie; Yang, Jihui; Da Silva, J. L.F.; Wei, Su-Huai

    2014-10-30

    Using first-principles calculations, we study the diffusions of interstitial defects Cd, Cu, Te, and Cl in CdTe. We find that the diffusion behavior is strongly correlated with the electronic structure of the interstitial diffuser. For Cd and Cu, because the defect state is the non-degenerated slike state under Td symmetry, the diffusions are almost along the [111] directions between the tetrahedral sites, although the diffusion of Cu shows some deviation due to the s - d coupling. The diffusions of the neutral and charged Cd and Cu follow similar paths. However, for Te and Cl atoms, because the defect statemore » is the degenerated p-like state under Td symmetry, large distortions occur. Therefore, the diffusion paths are very different from those of Cd and Cu interstitials, and depend strongly on the charge states of the interstitial atoms. For Te, we find that the distortion is mostly stabilized by the crystal-field splitting, but for Cl, the exchange splitting plays a more important role.« less

  8. Nuclear and magnetic supercells in the multiferroic candidate: Pb3TeMn3P2O14

    DOE PAGES [OSTI]

    Silverstein, Harlyn J.; Zhao, Haidong; Wiebe, Christopher; Huq, Ashfia

    2015-01-01

    The dugganites, Te6+-containing members of the langasite series, have attracted recent interest due to their complex low-temperature magnetic unit cells, magnetodielectric, and potentially multiferroic properties. For Pb2+-containing dugganites, a large monoclinic supercell was reported and was found to have a profound effect on the low temperature magnetism and spin excitation spectra. Pb3TeMn3P2O14 is another dugganite previously shown to distort away from the canonical P321 langasite unit cell, although this supercell was never fully solved. Here we report the full crystal and magnetic structure solution of Pb3TeMn3P2O14 using synchrotron x-ray and neutron diffraction data: a large trigonal supercell is observed inmore » this material, which is believed to be the first supercell of its kind in the langasite family. Here, the magnetic structure, high-magnetic field behavior, and dielectric properties of Pb3TeMn3P2O14 are presented. In addition to showing weak magnetoelectric behavior similar to other langasites, it was found that a phase transition occurs at 3 T near the antiferromagnetic transition temperature. (C) 2014 Elsevier Inc. All rights reserved.« less

  9. Effects of chemo-mechanical polishing on CdZnTe X-ray and gamma-ray detectors

    DOE PAGES [OSTI]

    Egarievwe, Stephen E.; Hossain, Anwar; Okwechime, Ifechukwude O.; Gul, Rubi; James, Ralph B.

    2015-06-23

    Here, mechanically polishing cadmium zinc telluride (CdZnTe) wafers for x-ray and gamma-ray detectors often is inadequate in removing surface defects caused by cutting them from the ingots. Fabrication-induced defects, such as surface roughness, dangling bonds, and nonstoichiometric surfaces, often are reduced through polishing and etching the surface. In our earlier studies of mechanical polishing with alumina powder, etching with hydrogen bromide in hydrogen peroxide solution, and chemomechanical polishing with bromine–methanol–ethylene glycol solution, we found that the chemomechanical polishing process produced the least surface leakage current. In this research, we focused on using two chemicals to chemomechanically polish CdZnTe wafers aftermore » mechanical polishing, viz. bromine–methanol–ethylene glycol (BME) solution, and hydrogen bromide (HBr) in a hydrogen peroxide and ethylene–glycol solution. We used x-ray photoelectron spectroscopy (XPS), current–voltage (I–V) measurements, and Am-241 spectral response measurements to characterize and compare the effects of each solution. The results show that the HBr-based solution produced lower leakage current than the BME solution. Results from using the same chemomechanical polishing solution on two samples confirmed that the surface treatment affects the measured bulk current (a combination of bulk and surface currents). XPS results indicate that the tellurium oxide to tellurium peak ratios for the mechanical polishing process were reduced significantly by chemomechanical polishing using the BME solution (78.9% for Te 3d5/2O2 and 76.7% for Te 3d3/2O2) compared with the HBr-based solution (27.6% for Te 3d5/2O2 and 35.8% for Te 3d3/2O2). Spectral response measurements showed that the 59.5-keV peak of Am-241 remained under the same channel number for all three CdZnTe samples. While the BME-based solution gave a better performance of 7.15% full-width at half-maximum (FWHM) compared with 7.59% FWHM

  10. Effects of chemo-mechanical polishing on CdZnTe X-ray and gamma-ray detectors

    SciTech Connect

    Egarievwe, Stephen E.; Hossain, Anwar; Okwechime, Ifechukwude O.; Gul, Rubi; James, Ralph B.

    2015-06-23

    Here, mechanically polishing cadmium zinc telluride (CdZnTe) wafers for x-ray and gamma-ray detectors often is inadequate in removing surface defects caused by cutting them from the ingots. Fabrication-induced defects, such as surface roughness, dangling bonds, and nonstoichiometric surfaces, often are reduced through polishing and etching the surface. In our earlier studies of mechanical polishing with alumina powder, etching with hydrogen bromide in hydrogen peroxide solution, and chemomechanical polishing with bromine–methanol–ethylene glycol solution, we found that the chemomechanical polishing process produced the least surface leakage current. In this research, we focused on using two chemicals to chemomechanically polish CdZnTe wafers after mechanical polishing, viz. bromine–methanol–ethylene glycol (BME) solution, and hydrogen bromide (HBr) in a hydrogen peroxide and ethylene–glycol solution. We used x-ray photoelectron spectroscopy (XPS), current–voltage (I–V) measurements, and Am-241 spectral response measurements to characterize and compare the effects of each solution. The results show that the HBr-based solution produced lower leakage current than the BME solution. Results from using the same chemomechanical polishing solution on two samples confirmed that the surface treatment affects the measured bulk current (a combination of bulk and surface currents). XPS results indicate that the tellurium oxide to tellurium peak ratios for the mechanical polishing process were reduced significantly by chemomechanical polishing using the BME solution (78.9% for Te 3d5/2O2 and 76.7% for Te 3d3/2O2) compared with the HBr-based solution (27.6% for Te 3d5/2O2 and 35.8% for Te 3d3/2O2). Spectral response measurements showed that the 59.5-keV peak of Am-241 remained under the same channel number for all three CdZnTe samples. While the BME-based solution gave a better

  11. Probing color coherence effects in pp collisions at $\\sqrt{s}=7\\,\\text {TeV} $

    DOE PAGES [OSTI]

    Chatrchyan, Serguei; et al.

    2013-11-22

    A study of color coherence effects in pp collisions at a center-of-mass energy of 7 TeV is presented. The data used in the analysis were collected in 2010 with the CMS detector at the LHC and correspond to an integrated luminosity of 36 inverse picobarns. Events are selected that contain at least three jets and where the two jets with the largest transverse momentum exhibit a back-to-back topology. The measured angular correlation between the second- and third-leading jet is shown to be sensitive to color coherence effects, and is compared to the predictions of Monte Carlo models with various implementationsmoreof color coherence. None of the models describe the data satisfactorily.less

  12. Search for disappearing tracks in proton-proton collisions at ?s = 8 TeV

    SciTech Connect

    Khachatryan, V.

    2015-01-19

    A search is presented for long-lived charged particles that decay within the CMS detector and produce the signature of a disappearing track. Disappearing tracks are identified as those with little or no associated calorimeter energy deposits and with missing hits in the outer layers of the tracker. The search uses proton-proton collision data recorded at ?s = 8 TeV that corresponds to an integrated luminosity of 19.5 fb-1. The results of the search are interpreted in the context of the anomaly-mediated supersymmetry breaking (AMSB) model. The number of observed events is in agreement with the background expectation, and limits are set on the cross section of direct electroweak chargino production in terms of the chargino mass and mean proper lifetime. At 95% confidence level, AMSB models with a chargino mass less than 260 GeV, corresponding to a mean proper lifetime of 0.2 ns, are excluded.

  13. Photovoltaic effect in Bi{sub 2}TeO{sub 5} photorefractive crystal

    SciTech Connect

    Oliveira, Ivan de Capovilla, Danilo Augusto

    2015-10-12

    We report on the presence of a strong photovoltaic effect on nominally undoped photorefractive Bi{sub 2}TeO{sub 5} crystals and estimated their Glass photovoltaic constant and photovoltaic field for λ = 532 nm illumination. We directly measured the photovoltaic-based photocurrent in this material under λ = 532 nm wavelength laser light illumination and compared its behavior with that of a well known photovoltaic Fe-doped Lithium Niobate crystal. We also show the photovoltaic current to strongly depend on the polarization direction of light. Holographic diffraction efficiency oscillation during recording and the behavior of fringe-locked running holograms in self-stabilized experiments are also demonstrated here as additional indirect proofs of the photovoltaic nature of this material.

  14. Search for disappearing tracks in proton-proton collisions at ?s = 8 TeV

    DOE PAGES [OSTI]

    Khachatryan, V.

    2015-01-19

    A search is presented for long-lived charged particles that decay within the CMS detector and produce the signature of a disappearing track. Disappearing tracks are identified as those with little or no associated calorimeter energy deposits and with missing hits in the outer layers of the tracker. The search uses proton-proton collision data recorded at ?s = 8 TeV that corresponds to an integrated luminosity of 19.5 fb-1. The results of the search are interpreted in the context of the anomaly-mediated supersymmetry breaking (AMSB) model. The number of observed events is in agreement with the background expectation, and limits aremoreset on the cross section of direct electroweak chargino production in terms of the chargino mass and mean proper lifetime. At 95% confidence level, AMSB models with a chargino mass less than 260 GeV, corresponding to a mean proper lifetime of 0.2 ns, are excluded.less

  15. EVIDENCE OF A HADRONIC ORIGIN FOR THE TeV SOURCE J1834-087

    SciTech Connect

    Frail, D. A.; Claussen, M. J.; Mehault, J.

    2013-08-20

    We report on the discovery of compact, narrow OH line emission from the hydroxyl molecule at 1720 MHz toward the extended TeV source J1834-087. The origin of this high energy emission is unknown; it could be powered by one or more candidate neutron stars (leptonic) or by cosmic rays interacting with dense gas (hadronic). The OH emission is detected near the center of J1834-087, coincident with the radio continuum of the supernova remnant W41, and the radial velocity of the line is the same velocity as a giant molecular cloud along the line of sight. We argue that the OH is maser emission stimulated by the interaction of the W41 shock with the molecular cloud. The known correlation between {gamma}-ray bright supernova remnants and OH masers favors a hadronic interpretation for this high energy emission.

  16. Performance Stabilization of CdTe PV Modules using Bias and Light

    SciTech Connect

    Silverman, T. J.; Deceglie, M. G.; Marion, B.; Kurtz, S. R.

    2014-07-01

    Reversible performance changes due to light exposure frustrate repeatable performance measurements on CdTe PV modules. It is common to use extended light-exposure to ensure that measurements are representative of outdoor performance. We quantify the extent to which such a light-exposed state depends on module temperature and consider bias in the dark to aid in stabilization. We evaluate the use of dark forward bias to bring about a performance state equivalent to that obtained with light exposure, and to maintain a light-exposed state prior to STC performance measurement. Our results indicate that the most promising method for measuring a light-exposed state is to use light exposure at controlled temperature followed by prompt STC measurement with a repeatable time interval between exposure and the STC measurement.

  17. Evidence for charge Kondo effect in superconducting Tl-doped PbTe

    SciTech Connect

    Fisher, I

    2010-01-11

    We report results of low-temperature thermodynamic and transport measurements of Pb{sub 1-x}Tl{sub x}Te single crystals for Tl concentrations up to the solubility limit of approximately x = 1.5%. For all doped samples, we observe a low-temperature resistivity upturn that scales in magnitude with the Tl concentration. The temperature and field dependence of this upturn are consistent with a charge Kondo effect involving degenerate Tl valence states differing by two electrons, with a characteristic Kondo temperature T{sub K} {approx} 6 K. The observation of such an effect supports an electronic pairing mechanism for superconductivity in this material and may account for the anomalously high T{sub c} values.

  18. Direct Observation of Room-Temperature Polar Ordering in Colloidal GeTe Nanocrystals

    SciTech Connect

    Polking, Mark J.; Zheng, Haimei; Urban, Jeffrey J.; Milliron, Delia J.; Chan, Emory; Caldwell, Marissa A.; Raoux, Simone; Kisielowski, Christian F.; Ager III, Joel W.; Ramesh, Ramamoorthy; Alivisatos, A.P.

    2009-12-07

    Ferroelectrics and other materials that exhibit spontaneous polar ordering have demonstrated immense promise for applications ranging from non-volatile memories to microelectromechanical systems. However, experimental evidence of polar ordering and effective synthetic strategies for accessing these materials are lacking for low-dimensional nanomaterials. Here, we demonstrate the synthesis of size-controlled nanocrystals of the polar material germanium telluride (GeTe) using colloidal chemistry and provide the first direct evidence of room-temperature polar ordering in nanocrystals less than 5 nm in size using aberration-corrected transmission electron microscopy. Synchrotron x-ray diffraction and Raman studies demonstrate a sizeable polar distortion and a reversible size-dependent polar phase transition in these nanocrystals. The stability of polar ordering in solution-processible nanomaterials suggests an economical avenue to Tbit/in2-density non-volatile memory devices and other applications.

  19. Ultrafast terahertz-induced response of GeSbTe phase-change materials

    SciTech Connect

    Shu, Michael J.; Zalden, Peter; Chen, Frank; Weems, Ben; Chatzakis, Ioannis; Xiong, Feng; Jeyasingh, Rakesh; Pop, Eric; Philip Wong, H.-S.; Hoffmann, Matthias C.; Wuttig, Matthias; Lindenberg, Aaron M.

    2014-06-23

    The time-resolved ultrafast electric field-driven response of crystalline and amorphous GeSbTe films has been measured all-optically, pumping with single-cycle terahertz pulses as a means of biasing phase-change materials on a sub-picosecond time-scale. Utilizing the near-band-gap transmission as a probe of the electronic and structural response below the switching threshold, we observe a field-induced heating of the carrier system and resolve the picosecond-time-scale energy relaxation processes and their dependence on the sample annealing condition in the crystalline phase. In the amorphous phase, an instantaneous electroabsorption response is observed, quadratic in the terahertz field, followed by field-driven lattice heating, with Ohmic behavior up to 200 kV/cm.

  20. Surface defect states in MBE-grown CdTe layers

    SciTech Connect

    Olender, Karolina; Wosinski, Tadeusz; Fronc, Krzysztof; Tkaczyk, Zbigniew; Chusnutdinow, Sergij; Karczewski, Grzegorz

    2014-02-21

    Semiconductor surface plays an important role in the technology of semiconductor devices. In the present work we report results of our deep-level transient spectroscopy (DLTS) investigations of surface defect states in nitrogen doped p-type CdTe layers grown by the molecular-beam epitaxy technique. We observed a deep-level trap associated with surface states, with the activation energy for hole emission of 0.33 eV. DLTS peak position in the spectra for this trap, and its ionization energy, strongly depend on the electric field. Our measurements allow to determine a mechanism responsible for the enhancement of hole emission rate from the traps as the phonon-assisted tunnel effect. Density of surface defect states significantly decreased as a result of passivation in ammonium sulfide. Capacitance-voltage measurements confirmed the results obtained by the DLTS technique.

  1. Optical spectroscopy study of the three-dimensional Dirac semimetal ZrTe5

    DOE PAGES [OSTI]

    Chen, R. Y.; Gu, G. D.; Zhang, S. J.; Schneeloch, J. A.; Zhang, C.; Li, Q.; Wang, N. L.

    2015-08-05

    Three-dimensional (3D) topological Dirac materials have been under intensive study recently. The layered compound ZrTe5 has been suggested to be one such material as a result of transport and angle-resolved photoemission spectroscopy experiments. Here, we perform infrared reflectivity measurements to investigate the underlying physics of this material. The derived optical conductivity increases linearly with frequency below normal interband transitions, which provides optical spectroscopic proof of a 3D Dirac semimetal. In addition, the plasma edge shifts dramatically to lower energy upon temperature cooling, which might be due to the shrinking of the lattice parameters. Additionally, an extremely sharp peak shows upmore » in the frequency-dependent optical conductivity, indicating the presence of a Van Hove singularity in the joint density of state.« less

  2. Probing color coherence effects in pp collisions at √s = 7 TeV

    DOE PAGES [OSTI]

    Chatrchyan, Serguei

    2014-06-11

    A study of color coherence effects in pp collisions at a center-of-mass energy of 7 TeV is presented. The data used in the analysis were collected in 2010 with the CMS detector at the LHC and correspond to an integrated luminosity of 36 inverse picobarns. Events are selected that contain at least three jets and where the two jets with the largest transverse momentum exhibit a back-to-back topology. The measured angular correlation between the second- and third-leading jet is shown to be sensitive to color coherence effects, and is compared to the predictions of Monte Carlo models with various implementationsmore » of color coherence. None of the models describe the data satisfactorily.« less

  3. Testing the Technicolor Interpretation of the CDF Dijet Excess at the 8-TeV LHC

    SciTech Connect

    Eichten, Estia; Lane, Kenneth; Martin, Adam; Pilon, Eric

    2012-10-01

    Under the assumption that the dijet excess seen by the CDF Collaboration near 150 Gev in Wjj production is due to the lightest technipion of the low-scale technicolor process $\\rho_T \\rightarrow W \\pi_T$, we study its observability in LHC detectors for 8 TeV collisions and 20 inverse femtobarns of integrated luminosity. We describe interesting new kinematic tests that can provide independent confirmation of this LSTC hypothesis. We show that cuts similar to those employed by CDF, and recently by ATLAS, cannot confirm the dijet signal. We propose cuts tailored to the LSTC hypothesis and its backgrounds at the LHC that may reveal $\\rho_T \\rightarrow \\ell\

  4. Thermoelectric properties of CuAlCh{sub 2} (Ch = S, Se and Te)

    SciTech Connect

    Gudelli, Vijay Kumar; Kanchana, V.; Vaitheeswaran, G.

    2015-06-24

    Electronic and thermoelectric properties of ternary chalcopyrite-type CuAlCh{sub 2} (S, Se and Te) were studied using the first principles density functional calculations implemented in the full potential linear augmented plane wave (FP-LAPW) method. The thermoelectric properties are calculated by solving the Boltzmann transport equation within the constant relaxation time approximation. The calculated band gap using the Tran-Blaha modified Becke-Johnson potential (TB-mBJ), of all the compounds are in good agreement with the available experiment and other theoretical reports. Thermoelectric properties like thermopower, electrical conductivity scaled by relaxation time are calculated as a function of carrier concentrations at different temperatures. The calculated thermoelectric properties are compared with the available experiment and other theoretical calculations of similar materials.

  5. In situ neutron scattering study of nanostructured PbTe-PbS bulk thermoelectric material

    SciTech Connect

    Ren, Fei; Schmidt, Robert D; Case, Eldon D; An, Ke

    2016-01-01

    Nanostructures play an important role in thermoelectric materials. Their thermal stability, such as phase change and evolution at elevated temperatures, is thus of great interest to the thermoelectric community. In this study, in situ neutron diffraction was used to examine the phase evolution of nanostructured bulk PbTe-PbS materials fabricated using hot pressing and pulsed electrical current sintering (PECS). The PbS second phase was observed in all samples in the as-pressed condition. The temperature dependent lattice parameter and phase composition data show an initial formation of PbS precipitates followed by a redissolution during heating. The redissolution process started around 570 600 K, and completed at approximately 780 K. During cooling, the PECS sample followed a reversible curve while the heating/cooling behavior of the hot pressed sample was irreversible.

  6. High-temperature thermoelectric properties of Hg-doped CuInTe{sub 2}

    SciTech Connect

    Kucek, V. Drasar, C.; Kasparova, J.; Plechacek, T.; Benes, L.; Navratil, J.; Vlcek, M.

    2015-09-28

    Polycrystalline samples of composition CuIn{sub 1−x}Hg{sub x}Te{sub 2} (x = 0–0.21) were synthesized from elements of 5N purity using a solid state reaction. The phase purity of the products was verified by X-ray diffraction. Samples for transport property measurements were prepared using hot-pressing. The samples were characterized by measurement of the electrical conductivity, Hall coefficient, Seebeck coefficient, and thermal conductivity over a temperature range of 300–675 K. All samples show p-type conductivity. We discuss the influence of Hg substitution on the free carrier concentration and thermoelectric performance. The investigation of the thermoelectric properties shows up to a 40% improvement of ZT in the temperature range of 300–600 K.

  7. Optical spectroscopy study of the three-dimensional Dirac semimetal ZrTe5

    SciTech Connect

    Chen, R. Y.; Gu, G. D.; Zhang, S. J.; Schneeloch, J. A.; Zhang, C.; Li, Q.; Wang, N. L.

    2015-08-05

    Three-dimensional (3D) topological Dirac materials have been under intensive study recently. The layered compound ZrTe5 has been suggested to be one such material as a result of transport and angle-resolved photoemission spectroscopy experiments. Here, we perform infrared reflectivity measurements to investigate the underlying physics of this material. The derived optical conductivity increases linearly with frequency below normal interband transitions, which provides optical spectroscopic proof of a 3D Dirac semimetal. In addition, the plasma edge shifts dramatically to lower energy upon temperature cooling, which might be due to the shrinking of the lattice parameters. Additionally, an extremely sharp peak shows up in the frequency-dependent optical conductivity, indicating the presence of a Van Hove singularity in the joint density of state.

  8. Higgs self-coupling measurements at a 100 TeV hadron collider

    SciTech Connect

    Barr, Alan J.; Dolan, Matthew J.; Englert, Christoph; Ferreira de Lima, Enoque Danilo; Spannowsky, Michael

    2015-02-03

    An important physics goal of a possible next-generation high-energy hadron collider will be precision characterisation of the Higgs sector and electroweak symmetry breaking. A crucial part of understanding the nature of electroweak symmetry breaking is measuring the Higgs self-interactions. We study dihiggs production in proton-proton collisions at 100 TeV centre of mass energy in order to estimate the sensitivity such a machine would have to variations in the trilinear Higgs coupling around the Standard Model expectation. We focus on the bb¯γγ final state, including possible enhancements in sensitivity by exploiting dihiggs recoils against a hard jet. In conclusion, we find that it should be possible to measure the trilinear self-coupling with 40% accuracy given 3/ab and 12% with 30/ab of data.

  9. Pulsed power supplies for the Fermilab 1 TeV switchyard

    SciTech Connect

    Bartelson, L.; Walton, J.

    1985-06-01

    An upgraded system of pulseed switching magnets has been implemented in the Fermilab Switchyard to accommodate proton energies up to 1 TeV. These devices are required for switching the ''slow'' and ''fast'' extracted beams into their respective beam lines. ''Slow'' beam passes undeflected through the magnet in the off condition. During a puls ''slow'' is disabled and ''fast'', which is of approx.1 ms duration, is deflected. The requirement then is for a ''flat-top'' current pulse of minimum rise and fall time. The circuit chosen is of the resonant charge recovery type. Several different styles and combinations of magnets and constraints. In all cases maximum voltage is limited to 600 volts and pulse width to 100 ms.

  10. Multiwavelength Opportunities for GeV and TeV Telescopes

    SciTech Connect

    Thompson, D. J.

    2009-04-08

    With AGILE and Fermi now in orbit and TeV telescopes continuing to improve their performance, a variety of multiwavelength opportunities is increasingly available. One goal of such programs is to take advantage of the complementary capabilities of the two types of telescopes: the wide field surveys of the satellite detectors and the high sensitivity and resolution of the ground-based telescopes. Some aspects of these multiwavelength efforts will be carried out in near-real-time but must be anticipated with advance preparation. These include gamma-ray burst follow-ups and flare campaigns. Other projects such as long-term variability studies and gamma-ray source identification require deep observations and cooperative work with astrophysicists at longer wavelengths, along with the theoretical studies that tie the observations together.

  11. The GeV to TeV view of SNR IC443: predictions for Fermi

    SciTech Connect

    Marrero, Ana Y. Rodriguez; Torres, Diego F.; Cea Del Pozo, Elsa de

    2009-04-08

    We present a theoretical model that explains the high energy phenomenology of the neighborhood of SNR IC 443, as observed with the Major Atmospheric Gamma Imaging Cherenkov (MAGIC) telescope and the Energetic Gamma-Ray Experiment Telescope (EGRET). We also discuss how the model can be tested with observations by the Fermi Gamma-ray Large Area Space Telescope. We interpret MAGIC J0616+225 as delayed TeV emission of cosmic-rays diffusing from IC 443 and interacting with a known cloud located at a distance of about 20 pc in the foreground of the remnant. This scenario naturally explains the displacement between EGRET and MAGIC sources, their fluxes, and their spectra. Finally, we predict how this context can be observed by Fermi.

  12. Natural nanostructure and superlattice nanodomains in AgSbTe{sub 2}

    SciTech Connect

    Carlton, Christopher E.; De Armas, Ricardo; Shao-Horn, Yang E-mail: shaohorn@mit.edu; Ma, Jie; May, Andrew F.; Delaire, Olivier E-mail: shaohorn@mit.edu

    2014-04-14

    AgSbTe{sub 2} has long been of interest for thermoelectric applications because of its favorable electronic properties and its low lattice thermal conductivity of ?0.7?W/mK. In this work, we report new findings from a high-resolution transmission electron microscopy study revealing two nanostructures in single crystal Ag{sub 1?x}Sb{sub 1+x}Sb{sub 2+x} (with x?=?0, 0.1, 0.2); (i) a rippled natural nanostructure with a period of ?2.55?nm and (ii) superlattice ordered nanodomains consistent with cation ordering predicted in previous density functional theory studies. These nanostructures, combined with point-defects, probably serve as sources of scattering for phonons, thereby yielding a low lattice thermal conductivity over a wide temperature range.

  13. Heliospheric influence on the anisotropy of TeV cosmic rays

    SciTech Connect

    Zhang, Ming; Zuo, Pingbing; Pogorelov, Nikolai

    2014-07-20

    This paper provides a theory of using Liouville's theorem to map the anisotropy of TeV cosmic rays seen at Earth using the particle distribution function in the local interstellar medium (LISM). The ultimate source of cosmic ray anisotropy is the energy, pitch angle, and spatial dependence of the cosmic ray distribution function in the LISM. Because young nearby cosmic ray sources can make a special contribution to the cosmic ray anisotropy, the anisotropy depends on the source age, distance and magnetic connection, and particle diffusion of these cosmic rays, all of which make the anisotropy sensitive to the particle energy. When mapped through the magnetic and electric field of a magnetohydrodynamic model heliosphere, the large-scale dipolar and bidirectional interstellar anisotropy patterns become distorted if they are seen from Earth, resulting in many small structures in the observations. Best fits to cosmic ray anisotropy measurements have allowed us to estimate the particle density gradient and pitch angle anisotropies in the LISM. It is found that the heliotail, hydrogen deflection plane, and the plane perpendicular to the LISM magnetic field play a special role in distorting cosmic ray anisotropy. These features can lead to an accurate determination of the LISM magnetic field direction and polarity. The effects of solar cycle variation, the Sun's coronal magnetic field, and turbulence in the LISM and heliospheric magnetic fields are minor but clearly visible at a level roughly equal to a fraction of the overall anisotropy amplitude. The heliospheric influence becomes stronger at lower energies. Below 1 TeV, the anisotropy is dominated by small-scale patterns produced by disturbances in the heliosphere.

  14. Hiding a Heavy Higgs Boson at the 7 TeV LHC

    SciTech Connect

    Bai, Yang; Fan, JiJi; Hewett, JoAnne L.

    2012-03-20

    A heavy Standard Model Higgs boson is not only disfavored by electroweak precision observables but is also excluded by direct searches at the 7 TeV LHC for a wide range of masses. Here, we examine scenarios where a heavy Higgs boson can be made consistent with both the indirect constraints and the direct null searches by adding only one new particle beyond the Standard Model. This new particle should be a weak multiplet in order to have additional contributions to the oblique parameters. If it is a color singlet, we find that a heavy Higgs with an intermediate mass of 200-300 GeV can decay into the new states, suppressing the branching ratios for the standard model modes, and thus hiding a heavy Higgs at the LHC. If the new particle is also charged under QCD, the Higgs production cross section from gluon fusion can be reduced significantly due to the new colored particle one-loop contribution. Current collider constraints on the new particles allow for viable parameter space to exist in order to hide a heavy Higgs boson. We categorize the general signatures of these new particles, identify favored regions of their parameter space and point out that discovering or excluding them at the LHC can provide important indirect information for a heavy Higgs. Finally, for a very heavy Higgs boson, beyond the search limit at the 7 TeV LHC, we discuss three additional scenarios where models would be consistent with electroweak precision tests: including an additional vector-like fermion mixing with the top quark, adding another U(1) gauge boson and modifying triple-gauge boson couplings.

  15. Investigating Broadband Variability of the TeV Blazar 1ES 1959+650

    SciTech Connect

    Aliu, E.; Archambault, S.; Arlen, T.; Aune, T.; Barnacka, A.; Beilicke, M.; Benbow, W.; Berger, K.; Bird, R.; Bouvier, A.; Buckley, J. H.; Bugaev, V.; Cerruti, M.; Chen, X.; Ciupik, L.; Collins-Hughes, E.; Connolly, M. P.; Cui, W.; Dumm, J.; Eisch, J. D.; Falcone, A.; Federici, S.; Feng, Q.; Finley, J. P.; Fleischhack, H.; Hanna, D.; Holder, J.; Hughes, G.; Hughes, Z.; Humensky, T. B.; Johnson, C. A.; Kaaret, P.; Kar, P.; Kertzman, M.; Khassen, Y.; Kieda, D.; Krawczynski, H.; Krennrich, F.; Lang, M. J.; Madhavan, A. S.; Majumdar, P.; McArthur, S.; McCann, A.; Meagher, K.; Millis, J.; Moriarty, P.; Mukherjee, R.; Nelson, T.; Nieto, D.; O'Faolain de Bhroithe, A.; Ong, R. A.; Otte, A. N.; Park, N.; Perkins, J. S.; Pohl, M.; Popkow, A.; Prokoph, H.; Quinn, J.; Ragan, K.; Rajotte, J.; Reyes, L. C.; Reynolds, P. T.; Richards, G. T.; Roache, E.; Sadun, A.; Santander, M.; Sembroski, G. H.; Shahinyan, K.; Sheidaei, F.; Smith, A. W.; Staszak, D.; Telezhinsky, I.; Theiling, M.; Tyler, J.; Varlotta, A.; Vassiliev, V. V.; Vincent, S.; Wakeley, S. P.; Weekes, T. C.; Weinstein, A.; Welsing, R.; Wilhelm, A.; Williams, D. A.; Zitzer, B.; Boettcher, M.; Fumagalli, M.

    2014-12-03

    We summarize broadband observations of the TeV-emitting blazar 1ES 1959 650, including optical R-band observations by the robotic telescopes Super-LOTIS and iTelescope, UV observations by Swift Ultraviolet and Optical Telescope, X-ray observations by the Swift X-ray Telescope, high-energy gamma-ray observations with the Fermi Large Area Telescope, and very-high-energy (VHE) gamma-ray observations by VERITAS above 315 GeV, all taken between 2012 April 17 and 2012 June 1 (MJD 56034 and 56079). The contemporaneous variability of the broadband spectral energy distribution is explored in the context of a simple synchrotron self Compton (SSC) model. In the SSC emission scenario, we find that the parameters required to represent the high state are significantly different than those in the low state. Motivated by possible evidence of gas in the vicinity of the blazar, we also investigate a reflected emission model to describe the observed variability pattern. This model assumes that the non-thermal emission from the jet is reflected by a nearby cloud of gas, allowing the reflected emission to re-enter the blob and produce an elevated gamma-ray state with no simultaneous elevated synchrotron flux. The model applied here, although not required to explain the observed variability pattern, represents one possible scenario which can describe the observations. As applied to an elevated VHE state of 66% of the Crab Nebula flux, observed on a single night during the observation period, the reflected emission scenario does not support a purely leptonic non-thermal emission mechanism. The reflected model does, however, predict a reflected photon field with sufficient energy to enable elevated gamma-ray emission via pion production with protons of energies between 10 and 100 TeV.

  16. Investigating broadband variability of the TeV blazar 1ES 1959+650

    DOE PAGES [OSTI]

    Aliu, E.; Archambault, S.; Arlen, T.; Aune, T.; Barnacka, A.; Beilicke, M.; Benbow, W.; Berger, K.; Bird, R.; Bouvier, A.; et al

    2014-12-03

    We summarize broadband observations of the TeV-emitting blazar 1ES 1959 650, including optical R-band observations by the robotic telescopes Super-LOTIS and iTelescope, UV observations by Swift UVOT, X-ray observations by the Swift X-ray Telescope, high-energy gamma-ray observations with the Fermi Large Area Telescope, and very-high-energy (VHE) gamma-ray observations by VERITAS above 315 GeV, all taken between 2012 April 17 and 2012 June 1 (MJD 56034 and 56079). The contemporaneous variability of the broadband spectral energy distribution is explored in the context of a simple synchrotron self Compton (SSC) model. In the SSC emission scenario, we find that the parameters requiredmore » to represent the high state are significantly different than those in the low state. Motivated by possible evidence of gas in the vicinity of the blazar, we also investigate a reflected emission model to describe the observed variability pattern. This model assumes that the non-thermal emission from the jet is reflected by a nearby cloud of gas, allowing the reflected emission to re-enter the blob and produce an elevated gamma-ray state with no simultaneous elevated synchrotron flux. The model applied here, although not required to explain the observed variability pattern, represents one possible scenario which can describe the observations. As applied to an elevated VHE state of 66% of the Crab Nebula flux, observed on a single night during the observation period, the reflected emission scenario does not support a purely leptonic non-thermal emission mechanism. The reflected model does, however, predict a reflected photon field with sufficient energy to enable elevated gamma-ray emission via pion production with protons of energies between 10 and 100 TeV.« less

  17. Investigating broadband variability of the TeV blazar 1ES 1959+650

    SciTech Connect

    Aliu, E.; Archambault, S.; Arlen, T.; Aune, T.; Barnacka, A.; Beilicke, M.; Benbow, W.; Berger, K.; Bird, R.; Bouvier, A.; Buckley, J. H.; Bugaev, V.; Cerruti, M.; Chen, X.; Ciupik, L.; Collins-Hughes, E.; Connolly, M. P.; Cui, W.; Dumm, J.; Eisch, J. D.; Falcone, A.; Federici, S.; Feng, Q.; Finley, J. P.; Fleischhack, H.; Fortin, P.; Fortson, L.; Furniss, A.; Galante, N.; Gillanders, G. H.; Griffin, S.; Griffiths, S. T.; Grube, J.; Gyuk, G.; Håkansson, N.; Hanna, D.; Holder, J.; Hughes, G.; Hughes, Z.; Humensky, T. B.; Johnson, C. A.; Kaaret, P.; Kar, P.; Kertzman, M.; Khassen, Y.; Kieda, D.; Krawczynski, H.; Krennrich, F.; Lang, M. J.; Madhavan, A. S.; Majumdar, P.; McArthur, S.; McCann, A.; Meagher, K.; Millis, J.; Moriarty, P.; Mukherjee, R.; Nelson, T.; Nieto, D.; de Bhróithe, A. O'Faoláin; Ong, R. A.; Otte, A. N.; Park, N.; Perkins, J. S.; Pohl, M.; Popkow, A.; Prokoph, H.; Quinn, J.; Ragan, K.; Rajotte, J.; Reyes, L. C.; Reynolds, P. T.; Richards, G. T.; Roache, E.; Sadun, A.; Santander, M.; Sembroski, G. H.; Shahinyan, K.; Sheidaei, F.; Smith, A. W.; Staszak, D.; Telezhinsky, I.; Theiling, M.; Tyler, J.; Varlotta, A.; Vassiliev, V. V.; Vincent, S.; Wakely, S. P.; Weekes, T. C.; Weinstein, A.; Welsing, R.; Wilhelm, A.; Williams, D. A.; Zitzer, and B.; Böttcher, M.; Fumagalli, M.

    2014-12-03

    We summarize broadband observations of the TeV-emitting blazar 1ES 1959 650, including optical R-band observations by the robotic telescopes Super-LOTIS and iTelescope, UV observations by Swift UVOT, X-ray observations by the Swift X-ray Telescope, high-energy gamma-ray observations with the Fermi Large Area Telescope, and very-high-energy (VHE) gamma-ray observations by VERITAS above 315 GeV, all taken between 2012 April 17 and 2012 June 1 (MJD 56034 and 56079). The contemporaneous variability of the broadband spectral energy distribution is explored in the context of a simple synchrotron self Compton (SSC) model. In the SSC emission scenario, we find that the parameters required to represent the high state are significantly different than those in the low state. Motivated by possible evidence of gas in the vicinity of the blazar, we also investigate a reflected emission model to describe the observed variability pattern. This model assumes that the non-thermal emission from the jet is reflected by a nearby cloud of gas, allowing the reflected emission to re-enter the blob and produce an elevated gamma-ray state with no simultaneous elevated synchrotron flux. The model applied here, although not required to explain the observed variability pattern, represents one possible scenario which can describe the observations. As applied to an elevated VHE state of 66% of the Crab Nebula flux, observed on a single night during the observation period, the reflected emission scenario does not support a purely leptonic non-thermal emission mechanism. The reflected model does, however, predict a reflected photon field with sufficient energy to enable elevated gamma-ray emission via pion production with protons of energies between 10 and 100 TeV.

  18. Towards a predictive route for selection of doping elements for the thermoelectric compound PbTe from first-principles

    SciTech Connect

    Joseph, Elad; Amouyal, Yaron

    2015-05-07

    Striving for improvements of the thermoelectric (TE) properties of the technologically important lead telluride (PbTe) compound, we investigate the influence of different doping elements on the thermal conductivity, Seebeck coefficient, and electrical conductivity applying density functional theory calculations. Our approach combines total-energy calculations yielding lattice vibrational properties with the Boltzmann transport theory to obtain electronic transport properties. We find that doping with elements from the 1st and 3rd columns of the periodic table reduces the sound velocity and, consequently, the lattice thermal conductivity, while 2nd column dopants have no such influence. Furthermore, 1.6 at. % doping with 4th and 5th column elements provides the highest reduction of lattice thermal conductivity. Out of this group, Hf doping results in maximum reduction of the sound velocity from 2030 m s{sup −1} for pure PbTe to 1370 m s{sup −1}, which is equivalent to ca. 32% reduction of lattice thermal conductivity. The highest power factor values calculated for 1.6 at. % doping range between 40 and 56 μW cm{sup −1} K{sup −2}, and are obtained for substitution with dopants having the same valence as Pb or Te, such as those located at the 2nd, 14th, and 16th columns of the periodic table. We demonstrate how this method may be generalized for dopant-selection-oriented materials design aimed at improving TE performance of other compounds.

  19. Understanding misfit strain releasing mechanisms via molecular dynamics simulations of CdTe growth on {112}zinc-blende CdS

    DOE PAGES [OSTI]

    Zhou, Xiaowang; Chavez, Jose J.; Almeida, Sergio F.; Zubia, David

    2016-07-25

    Molecular dynamics simulations have been used to analyse microstructures of CdTe films grown on {112} surfaces of zinc-blende CdS. Interestingly, CdTe films grow in <331> orientations as opposed to <112> epitaxial orientations. At the CdTe-{331}/CdS-{112} interface, however, there exists an axis that is parallel to the <110> orientation of both CdS and CdTe. It is the direction orthogonal to this <110> that becomes different, being <116> for CdTe and <111> for CdS, respectively. Missing CdTe-{110} planes are found along the <110> axis, suggesting that the misfit strain is released by the conventional misfit dislocation mechanism along this axis. In themore » orthogonal axis, the misfit strain is found to be more effectively released by the new grain orientation mechanism. Our finding is supported by literature experimental observations of the change of growth direction when Cd0.96Zn0.04Te films are deposited on GaAs. Lastly the analyses of energetics clearly demonstrate the cause for the formation of the new orientation, and the insights gained from our studies can help understand the grain structures experimentally observed in lattice mismatched systems.« less

  20. Magnetic and electrode properties, structure and phase relations of the layered triangular-lattice tellurate Li{sub 4}NiTeO{sub 6}

    SciTech Connect

    Zvereva, Elena A.; Nalbandyan, Vladimir B.; Evstigneeva, Maria A.; Koo, Hyun-Joo; Whangbo, Myung-Hwan; Ushakov, Arseni V.; Medvedev, Boris S.; Medvedeva, Larisa I.; Gridina, Nelly A.; Yalovega, Galina E.; Churikov, Alexei V.; Vasiliev, Alexander N.; Büchner, Bernd

    2015-05-15

    We examined the magnetic properties of layered oxide Li{sub 4}NiTeO{sub 6} by magnetic susceptibility, magnetization and ESR measurements and density functional calculations, and characterized phase relations, crystal structure and electrochemical properties of Li{sub 4}NiTeO{sub 6}. The magnetization and ESR data indicate the absence of a long-range magnetic order down to 1.8 K, and the magnetic susceptibility data the presence of dominant antiferromagnetic interactions. These observations are well accounted for by density functional calculations, which show that the spin exchanges of the LiNiTeO{sub 6} layers in Li{sub 4}NiTeO{sub 6} are strongly spin frustrated. The electrochemical charging of Li{sub 4}NiTeO{sub 6} takes place at constant potential of ca. 4.2 V vs. Li/Li{sup +} indicating two-phase process as confirmed by X-rays. The starting phase is only partially recovered on discharge due to side reactions. - Graphical abstract: No long-range magnetic order due to frustration in 2D triangular lattice antiferromagnet Li{sub 4}NiTeO{sub 6}. - Highlights: • Li{sub 4}NiTeO{sub 6} is 2D triangular lattice magnet with no long-range order down to 1.8 K. • Intralayer exchange interactions are antiferromagnetic and strongly spin frustrated. • The electrochemical Li extraction proceeds in a two-phase mode at 4.2 V vs. Li/Li{sup +}. • The electrochemical charge–discharge is only partially reversible. • Li{sub 2}O–NiO{sub y}–TeO{sub x} phase relations are reported; Li{sub 4}NiTeO{sub 6} is essentially stoichiometric.

  1. From thermoelectric bulk to nanomaterials: Current progress for Bi 2 Te 3 and CoSb 3: From thermoelectric bulk to nanomaterials

    DOE PAGES [OSTI]

    Peranio, N.; Eibl, O.; Bäßler, S.; Nielsch, K.; Klobes, B.; Hermann, R. P.; Daniel, M.; Albrecht, M.; Görlitz, H.; Pacheco, V.; et al

    2015-10-29

    We synthesized Bi2Te3 and CoSb3 based nanomaterials and their thermoelectric, structural, and vibrational properties analyzed to assess and reduce ZT-limiting mechanisms. The same preparation and/or characterization methods were applied in the different materials systems. Single-crystalline, ternary p-type Bi15Sb29Te56, and n-type Bi38Te55Se7 nanowires with power factors comparable to nanostructured bulkmaterialswere prepared by potential-pulsed electrochemical deposition in a nanostructured Al2O3 matrix. p-type Sb2Te3, n-type Bi2Te3, and n-type CoSb3 thin films were grown at room temperature using molecular beam epitaxy and were subsequently annealed at elevated temperatures. It yielded polycrystalline, single phase thin films with optimized charge carrier densities. In CoSb3 thin filmsmore » the speed of sound could be reduced by filling the cage structure with Yb and alloying with Fe yielded p-type material. Bi2(Te0.91Se0.09)3/SiC and (Bi0.26Sb0.74)2Te3/SiC nanocomposites with low thermal conductivities and ZT values larger than 1 were prepared by spark plasma sintering. Nanostructure, texture, chemical composition, as well as electronic and phononic excitations were investigated by X-ray diffraction, nuclear resonance scattering, inelastic neutron scattering, M ossbauer spectroscopy, and transmission electron microscopy. Furthermore, for Bi2Te3 materials, ab-initio calculations together with equilibrium and non-equilibrium molecular dynamics simulations for point defects yielded their formation energies and their effect on lattice thermal conductivity, respectively. Current advances in thermoelectric Bi2Te3 and CoSb3 based nanomaterials are summarized. Advanced synthesis and characterization methods and theoreticalmodelingwere combined to assess and reduce ZT-limiting mechanisms in these materials.« less

  2. Optical-Fiber-Based, Time-Resolved Photoluminescence Spectrometer for Thin-Film Absorber Characterization and Analysis of TRPL Data for CdS/CdTe Interface: Preprint

    SciTech Connect

    Kuciauskas, D.; Duenow, J. N.; Kanevce, A.; Li, J. V.; Young, M. R.; Dippo, P.; Levi, D. H.

    2012-06-01

    We describe the design of a time resolved photoluminescence (TRPL) spectrometer for rapid semiconductor absorber characterization. Simplicity and flexibility is achieved by using single optical fiber to deliver laser pulses and to collect photoluminescence. We apply TRPL for characterization of CdS/CdTe absorbers after deposition, CdCl2 treatment, Cu doping, and back contact formation. Data suggest this method could be applied in various stages of PV device processing. Finally, we show how to analyze TRPL data for CdS/CdTe absorbers by considering laser light absorption depth and intermixing at CdS/CdTe interface.

  3. Temperature scaling in the quantum-Hall-effect regime in a HgTe quantum well with an inverted energy spectrum

    SciTech Connect

    Arapov, Yu. G.; Gudina, S. V.; Neverov, V. N.; Podgornykh, S. M.; Popov, M. R. Harus, G. I.; Shelushinina, N. G.; Yakunin, M. V.; Mikhailov, N. N.; Dvoretsky, S. A.

    2015-12-15

    The longitudinal and Hall magnetoresistances of HgTe/HgCdTe heterostructures with an inverted energy spectrum (the HgTe quantum well width is d = 20.3 nm) are measured in the quantum-Hall-effect regime at T = 2–50 K in magnetic fields up to B = 9 T. Analysis of the temperature dependences of conductivity in the transition region between the first and second plateaus of the quantum Hall effect shows the feasibility of the scaling regime for a plateau–plateau quantum phase transition in 2D-structures on the basis of mercury telluride.

  4. Quantifying electron-phonon coupling in CdTe{sub 1−x}Se{sub x} nanocrystals via coherent phonon manipulation

    SciTech Connect

    Spann, B. T.; Xu, X.

    2014-08-25

    We employ ultrafast transient absorption spectroscopy with temporal pulse shaping to manipulate coherent phonon excitation and quantify the strength of electron-phonon coupling in CdTe{sub 1−x}Se{sub x} nanocrystals (NCs). Raman active CdSe and CdTe longitudinal optical phonon (LO) modes are excited and probed in the time domain. By temporally controlling pump pulse pairs to coherently excite and cancel coherent phonons in the CdTe{sub 1−x}Se{sub x} NCs, we estimate the relative amount of optical energy that is coupled to the coherent CdSe LO mode.

  5. Measurement of inclusive jet production and nuclear modifications in pPb collisions at $$$\\sqrt{s_{_\\mathrm {NN}}} =5.02\\,\\mathrm{TeV} $$$ s NN = 5.02 TeV

    DOE PAGES [OSTI]

    Khachatryan, Vardan

    2016-07-04

    Inclusive jet production in pPb collisions at a nucleon-nucleon (NN) center-of-mass energy of sqrt(s[NN])=5.02 TeV is studied with the CMS detector at the LHC. A data sample corresponding to an integrated luminosity of 35 inverse nanobarns is analyzed.The jet transverse momentum spectra are studied in seven pseudorapidity intervals covering the range -2.0

  6. Search for squarks and gluinos in final states with jets and missing transverse momentum at $$$\\sqrt{s}$$$ s =13 $$${\\mathrm{TeV}}$$$ TeV with the ATLAS detector

    DOE PAGES [OSTI]

    Aaboud, M.; Aad, G.; Abbott, B.; Abdallah, J.; Abdinov, O.; Abeloos, B.; Aben, R.; AbouZeid, O. S.; Abraham, N. L.; Abramowicz, H.; et al

    2016-07-01

    A search for squarks and gluinos in final states containing hadronic jets, missing transverse momentum but no electrons or muons is presented. The data were recorded in 2015 by the ATLAS experiment in s=13TeV proton–proton collisions at the Large Hadron Collider. No excess above the Standard Model background expectation was observed in 3.2 fb-1 of analyzed data. Results are interpreted within simplified models that assume R -parity is conserved and the neutralino is the lightest supersymmetric particle. An exclusion limit at the 95 % confidence level on the mass of the gluino is set at 1.51 TeV for a simplifiedmore » model incorporating only a gluino octet and the lightest neutralino, assuming the lightest neutralino is massless. For a simplified model involving the strong production of mass-degenerate first- and second-generation squarks, squark masses below 1.03 TeV are excluded for a massless lightest neutralino. These limits substantially extend the region of supersymmetric parameter space excluded by previous measurements with the ATLAS detector.« less

  7. Comparison of crystal growth and thermoelectric properties of n-type Bi-Se-Te and p-type Bi-Sb-Te nanocrystalline thin films: Effects of homogeneous irradiation with an electron beam

    SciTech Connect

    Takashiri, Masayuki, E-mail: takashiri@tokai-u.jp; Imai, Kazuo; Uyama, Masato; Nishi, Yoshitake [Department of Materials Science, Tokai University, 4-1-1 Kitakaname, Hiratsuka, Kanagawa 259-1292 (Japan); Hagino, Harutoshi; Miyazaki, Koji [Department of Mechanical and Control Engineering, Kyushu Institute of Technology, 1-1 Sensui, Tobata-ku, Kitakyushu 804-8550 (Japan); Tanaka, Saburo [Department of Mechanical Engineering, College of Engineering, Nihon University, Nakagawara, Tokusada, Tamuramachi, Koriyama, Fukushima 963-8642 (Japan)

    2014-06-07

    The effects of homogenous electron beam (EB) irradiation on the crystal growth and thermoelectric properties of n-type Bi-Se-Te and p-type Bi-Sb-Te thin films were investigated. Both types of thin films were prepared by flash evaporation, after which homogeneous EB irradiation was performed at an acceleration voltage of 0.17?MeV. For the n-type thin films, nanodots with a diameter of less than 10?nm were observed on the surface of rice-like nanostructures, and crystallization and crystal orientation were improved by EB irradiation. The resulting enhancement of mobility led to increased electrical conductivity and thermoelectric power factor for the n-type thin films. In contrast, the crystallization and crystal orientation of the p-type thin films were not influenced by EB irradiation. The carrier concentration increased and mobility decreased with increased EB irradiation dose, possibly because of the generation of defects. As a result, the thermoelectric power factor of p-type thin films was not improved by EB irradiation. The different crystallization behavior of the n-type and p-type thin films is attributed to atomic rearrangement during EB irradiation. Selenium in the n-type thin films is more likely to undergo atomic rearrangement than the other atoms present, so only the crystallinity of the n-type Bi-Se-Te thin films was enhanced.

  8. Emission switching in carbon dots coated CdTe quantum dots driving by pH dependent hetero-interactions

    SciTech Connect

    Dai, Xiao; Wang, Hao; Yi, Qinghua; Wang, Yun; Cong, Shan; Zhao, Jie; Sun, Yinghui; Zou, Guifu E-mail: jiexiong@uestc.edu.cn; Qian, Zhicheng; Huang, Jianwen; Xiong, Jie E-mail: jiexiong@uestc.edu.cn; Luo, Hongmei

    2015-11-16

    Due to the different emission mechanism between fluorescent carbon dots and semiconductor quantum dots (QDs), it is of interest to explore the potential emission in hetero-structured carbon dots/semiconducting QDs. Herein, we design carbon dots coated CdTe QDs (CDQDs) and investigate their inherent emission. We demonstrate switchable emission for the hetero-interactions of the CDQDs. Optical analyses indicate electron transfer between the carbon dots and the CdTe QDs. A heterojunction electron process is proposed as the driving mechanism based on N atom protonation of the carbon dots. This work advances our understanding of the interaction mechanism of the heterostructured CDQDs and benefits the future development of optoelectronic nanodevices with new functionalities.

  9. Chemical analysis of anodic oxide layers based on Hg/sub 1-x/Cd/sub x/Te

    SciTech Connect

    Korsak, T.E.

    1987-02-01

    The goal of this work is to study the application of the photometric method in analyzing the composition of Hg/sub 1-x/Cd/sub x/Te solid solution anodic oxide with high accuracy and without preliminary separation of the elements. In order to determine cadmium content, a photometric measurement on a complex of this element with xylenol orange was used. Mercury concentration was determined using an extraction photometric method based on benzene extraction of chloride complexes of mercury anions with crystal violet. Tellurium content was determined by extraction with dichloroethane of bromide complexes of tellurium with diantipyrylpropylmethane. The authors synthesized diantipyrylpropylmethane as described. They studied single crystal Hg/sub 1-x/Cd/sub x/Te samples of random orientation with x = 0.2 and n-type conductivity.

  10. First-principles multiple-barrier diffusion theory. The case study of interstitial diffusion in CdTe

    SciTech Connect

    Yang, Ji -Hui; Park, Ji -Sang; Kang, Joongoo; Wei, Su -Huai

    2015-02-17

    The diffusion of particles in solid-state materials generally involves several sequential thermal-activation processes. However, presently, diffusion coefficient theory only deals with a single barrier, i.e., it lacks an accurate description to deal with multiple-barrier diffusion. Here, we develop a general diffusion coefficient theory for multiple-barrier diffusion. Using our diffusion theory and first-principles calculated hopping rates for each barrier, we calculate the diffusion coefficients of Cd, Cu, Te, and Cl interstitials in CdTe for their full multiple-barrier diffusion pathways. As a result, we found that the calculated diffusivity agrees well with the experimental measurement, thus justifying our theory, which is general for many other systems.

  11. First-principles multiple-barrier diffusion theory. The case study of interstitial diffusion in CdTe

    DOE PAGES [OSTI]

    Yang, Ji -Hui; Park, Ji -Sang; Kang, Joongoo; Wei, Su -Huai

    2015-02-17

    The diffusion of particles in solid-state materials generally involves several sequential thermal-activation processes. However, presently, diffusion coefficient theory only deals with a single barrier, i.e., it lacks an accurate description to deal with multiple-barrier diffusion. Here, we develop a general diffusion coefficient theory for multiple-barrier diffusion. Using our diffusion theory and first-principles calculated hopping rates for each barrier, we calculate the diffusion coefficients of Cd, Cu, Te, and Cl interstitials in CdTe for their full multiple-barrier diffusion pathways. As a result, we found that the calculated diffusivity agrees well with the experimental measurement, thus justifying our theory, which is generalmore » for many other systems.« less

  12. Tuning the carrier concentration to improve the thermoelectric performance of CuInTe{sub 2} compound

    SciTech Connect

    Wei, J.; Liu, H. J. Cheng, L.; Zhang, J.; Liang, J. H.; Jiang, P. H.; Fan, D. D.; Shi, J.

    2015-10-15

    The electronic and transport properties of CuInTe{sub 2} chalcopyrite are investigated using density functional calculations combined with Boltzmann theory. The band gap predicted from hybrid functional is 0.92 eV, which agrees well with experimental data and leads to relatively larger Seebeck coefficient compared with those of narrow-gap thermoelectric materials. By fine tuning the carrier concentration, the electrical conductivity and power factor of the system can be significantly optimized. Together with the inherent low thermal conductivity, the ZT values of CuInTe{sub 2} compound can be enhanced to as high as 1.72 at 850 K, which is obviously larger than those measured experimentally and suggests there is still room to improve the thermoelectric performance of this chalcopyrite compound.

  13. Exchange enhancement of the electron g-factor in a two-dimensional semimetal in HgTe quantum wells

    SciTech Connect

    Bovkun, L. S. Krishtopenko, S. S.; Zholudev, M. S.; Ikonnikov, A. V.; Spirin, K. E.; Dvoretsky, S. A.; Mikhailov, N. N.; Teppe, F.; Knap, W.; Gavrilenko, V. I.

    2015-12-15

    The exchange enhancement of the electron g-factor in perpendicular magnetic fields to 12 T in HgTe/CdHgTe quantum wells 20 nm wide with a semimetal band structure is studied. The electron effective mass and g-factor at the Fermi level are determined by analyzing the temperature dependence of the amplitude of Shubnikov–de Haas oscillation in weak fields and near odd Landau-level filling factors ν ≤ 9. The experimental values are compared with theoretical calculations performed in the one-electron approximation using the eight-band kp Hamiltonian. The found dependence of g-factor enhancement on the electron concentration is explained by changes in the contributions of hole- and electron-like states to exchange corrections to the Landau-level energies in the conduction band.

  14. Deflection and Extraction of Pb Ions up to 33 TeV/c by a Bent Silicon Crystal

    SciTech Connect

    Arduini, G.; Biino, C.; Clement, M.; Cornelis, K.; Doble, N.; Elsener, K.; Ferioli, G.; Fidecaro, G.; Gatignon, L.; Grafstroem, P.; Gyr, M.; Herr, W.; Klem, J.; Mikkelsen, U.; Weisse, E.; Mo Uggerho Taratin, A.; Freund, A.; Keppler, P.; Major, J.

    1997-11-01

    The first results from an experiment to deflect a beam of fully stripped, ultrarelativistic Pb{sup 82+} ions of 400 GeV/c per unit of charge, equivalent to 33 TeV/c , by means of a bent crystal are reported. Deflection efficiencies are as high as 14{percent}, in agreement with theoretical estimates. In a second experiment a bent crystal was used to extract 270 GeV/c -per-charge Pb{sup 82+} (22 TeV/c) ions from a coasting beam in the CERN-SPS, and a high extraction efficiency of up to 10{percent} was found. These represent the first measurements to demonstrate applications of bent crystals in high energy heavy ion beams. {copyright} {ital 1997} {ital The American Physical Society}

  15. Magneto-optical characterizations of FeTe???Se??? thin films with critical current density over 1 MA/cm

    SciTech Connect

    Sun, Yue; Li, Qiang; Tsuchiya, Yuji; Pyon, Sunseng; Tamegai, Tsuyoshi; Zhang, Cheng; Ozaki, Toshinori

    2015-01-01

    We performed magneto-optical (MO) measurements on FeTe???Se??? thin films grown on LaAlO? (LAO) and Yttria-stabilized zirconia (YSZ) single-crystalline substrates. These thin films show superconducting transition temperature Tc ~19 K, 4 K higher than the bulk sample. Typical roof-top patterns can be observed in the MO images of thin films grown on LAO and YSZ, from which a large and homogeneous critical current density Jc ~ 3 - 4 x 10? A/cm at 5 K was obtained. Magnetic flux penetration measurement reveals that the current is almost isotropically distributed in the two thin films. Compared with bulk crystals, FeTe???Se??? thin film demonstrates not only higher Tc, but also much larger Jc, which is attractive for applications.

  16. Blinking suppression of CdTe quantum dots on epitaxial graphene and the analysis with Marcus electron transfer

    SciTech Connect

    Hirose, Takuya; Tamai, Naoto, E-mail: tamai@kwansei.ac.jp [Department of Chemistry, School of Science and Technology, Kwansei Gakuin University, 2-1 Gakuen, Sanda, Hyogo 669-1337 (Japan); Kutsuma, Yasunori; Kurita, Atsusi; Kaneko, Tadaaki [Department of Physics, School of Science and Technology, Kwansei Gakuin University, 2-1 Gakuen, Sanda, Hyogo 669-1337 (Japan)

    2014-08-25

    We have prepared epitaxial graphene by a Si sublimation method from 4H-SiC. Single-particle spectroscopy of CdTe quantum dots (QDs) on epitaxial graphene covered with polyvinylpyrrolidone (PVP) or polyethylene glycol (PEG) showed the suppression of luminescence blinking and ?10 times decreased luminescence intensity as compared with those on a glass. The electronic coupling constant, H{sub 01}, between CdTe QDs and graphene was calculated to be (3.3??0.4)??10{sup 2?}cm{sup ?1} in PVP and (3.7??0.8)??10{sup 2?}cm{sup ?1} in PEG based on Marcus theory of electron transfer and Tang-Marcus model of blinking with statistical distribution.

  17. Search for high-mass diphoton resonances in pp collisions ats=8 TeVwith the ATLAS detector

    DOE PAGES [OSTI]

    Aad, G.; Abbott, B.; Abdallah, J.; Abdel Khalek, S.; Abdinov, O.; Aben, R.; Abi, B.; Abolins, M.; AbouZeid, O. S.; Abramowicz, H.; et al

    2015-08-14

    This article describes a search for high-mass resonances decaying to a pair of photons using a sample of 20.3 fb-1 of pp collisions at s√=8 TeV recorded with the ATLAS detector at the Large Hadron Collider. The data are found to be in agreement with the Standard Model prediction, and limits are reported in the framework of the Randall-Sundrum model. This theory leads to the prediction of graviton states, the lightest of which could be observed at the Large Hadron Collider. A lower limit of 2.66 (1.41) TeV at 95% confidence level is set on the mass of the lightestmore » graviton for couplings of k/M¯¯Pl=0.1 (0.01).« less

  18. The effects of surface bond relaxation on electronic structure of Sb{sub 2}Te{sub 3} nano-films by first-principles calculation

    SciTech Connect

    Li, C. Zhao, Y. F.; Fu, C. X.; Gong, Y. Y.; Chi, B. Q.; Sun, C. Q.

    2014-10-15

    The effects of vertical compressive stress on Sb{sub 2}Te{sub 3} nano-films have been investigated by the first principles calculation, including stability, electronic structure, crystal structure, and bond order. It is found that the band gap of nano-film is sensitive to the stress in Sb{sub 2}Te{sub 3} nano-film and the critical thickness increases under compressive stress. The band gap and band order of Sb{sub 2}Te{sub 3} film has been affected collectively by the surface and internal crystal structures, the contraction ratio between surface bond length of nano-film and the corresponding bond length of bulk decides the band order of Sb{sub 2}Te{sub 3} film.

  19. Single-crystal structure study of iron chalcogenides Fe{sub 1+δ}Te{sub 1−x}S{sub x}

    SciTech Connect

    Shchichko, I. O.; Makarova, I. P.; Presnyakov, M. Yu.; Kazakov, S. M.; Antipov, E. V.; Chareev, D. A.; Mitrofanova, E. S.; Mikhutkin, A. A.; Vasil’ev, A. L.

    2015-03-15

    Single crystals of iron chalcogenides Fe{sub 1+δ}Te{sub 1−x}S{sub x} (x = 0, 0.09, and 0.1) were studied by scanning, transmission, and scanning transmission electron microscopy. In addition, a sample with x = 0 was studied by X-ray diffraction. The Te-site disorder observed in Fe{sub 1+δ} samples is, apparently, assigned to the incorporation of superstoichiometric iron Fe2 into the structure. The Fe1 atoms were found to be displaced from their ideal positions, which can only partially be attributed to electro-optical effects. The replacement of Te atoms by S in Fe{sub 1+δ}Te{sub 1−x}S{sub x} crystals gives rise to domains with ordered S atoms in some regions of the single crystal, resulting in the formation of a 2 × 1 or 2 × 2 superstructure.

  20. Temperature-sensitive junction transformations for mid-wavelength HgCdTe photovoltaic infrared detector arrays by laser beam induced current microscope

    SciTech Connect

    Qiu, Weicheng; Hu, Weida Lin, Tie; Yin, Fei; Zhang, Bo; Chen, Xiaoshuang; Lu, Wei; Cheng, Xiang'ai Wang, Rui

    2014-11-10

    In this paper, we report on the disappearance of the photosensitive area extension effect and the unusual temperature dependence of junction transformation for mid-wavelength, n-on-p HgCdTe photovoltaic infrared detector arrays. The n-type region is formed by B{sup +} ion implantation on Hg-vacancy-doped p-type HgCdTe. Junction transformations under different temperatures are visually captured by a laser beam induced current microscope. A physical model of temperature dependence on junction transformation is proposed and demonstrated by using numerical simulations. It is shown that Hg-interstitial diffusion and temperature activated defects jointly lead to the p-n junction transformation dependence on temperature, and the weaker mixed conduction compared with long-wavelength HgCdTe photodiode contributes to the disappearance of the photosensitive area extension effect in mid-wavelength HgCdTe infrared detector arrays.

  1. Phase stability, structures and properties of the (Bi{sub 2}){sub m} (Bi{sub 2}Te{sub 3}){sub n} natural superlattices

    SciTech Connect

    Bos, J.-W.G.; Faucheux, F.; Downie, R.A.; Marcinkova, A.

    2012-09-15

    The phase stability of the (Bi{sub 2}){sub m} (Bi{sub 2}Te{sub 3}){sub n} natural superlattices has been investigated through the low temperature solid state synthesis of a number of new binary Bi{sub x}Te{sub 1-x} compositions. Powder X-ray diffraction revealed that an infinitely adaptive series forms for 0.44{<=}x{<=}0.70, while an unusual 2-phase region with continuously changing compositions is observed for 0.41{<=}x{<=}0.43. For x>0.70, mixtures of elemental Bi and an almost constant composition (Bi{sub 2}){sub m} (Bi{sub 2}Te{sub 3}){sub n} phase are observed. Rietveld analysis of synchrotron X-ray powder diffraction data collected on Bi{sub 2}Te (m=2, n=1) revealed substantial interchange of Bi and Te between Bi{sub 2} and Bi{sub 2}Te{sub 3} blocks, demonstrating that the block compositions are variable. All investigated phase pure compositions are degenerate semiconductors with low residual resistivity ratios and moderate positive magnetoresistances (R/R{sub 0}=1.05 in 9 T). The maximum Seebeck coefficient is +80 {mu}V K{sup -1} for x=0.63, leading to an estimated thermoelectric figure of merit, zT=0.2 at 250 K. - Graphical abstract: An infinite number of possible (Bi{sub 2}){sub m} (Bi{sub 2}Te{sub 3}){sub n} structures exist for Bi{sub x}Te{sub 1-x} compositions between x=0.44 and x=0.70. Compositions near x=2/3 are promising p-type thermoelectrics. Highlights: Black-Right-Pointing-Pointer Phase Stability of the (Bi{sub 2}){sub m}{center_dot}(Bi{sub 2}Te{sub 3}){sub n} Natural Superlattices. Black-Right-Pointing-Pointer Thermoelectric Properties in the Bi{sub x}Te{sub 1-x} Phase Diagram. Black-Right-Pointing-Pointer Crystal Structure of Bi{sub 2}Te from Synchrotron X-ray Powder Diffraction.

  2. Property Improvement in CZT via Modeling and Processing Innovations . Te-particles in vertical gradient freeze CZT: Size and Spatial Distributions and Constitutional Supercooling

    SciTech Connect

    Henager, Charles H.; Alvine, Kyle J.; Bliss, Mary; Riley, Brian J.; Stave, Jean A.

    2014-10-01

    A section of a vertical gradient freeze CZT boule approximately 2100-mm3 with a planar area of 300-mm2 was prepared and examined using transmitted IR microscopy at various magnifications to determine the three-dimensional spatial and size distributions of Te-particles over large longitudinal and radial length scales. The boule section was approximately 50-mm wide by 60-mm in length by 7-mm thick and was doubly polished for TIR work. Te-particles were imaged through the thickness using extended focal imaging to locate the particles in thickness planes spaced 15-µm apart and then in plane of the image using xy-coordinates of the particle center of mass so that a true three dimensional particle map was assembled for a 1-mm by 45-mm longitudinal strip and for a 1-mm by 50-mm radial strip. Te-particle density distributions were determined as a function of longitudinal and radial positions in these strips, and treating the particles as vertices of a network created a 3D image of the particle spatial distribution. Te-particles exhibited a multi-modal log-normal size density distribution that indicated a slight preference for increasing size with longitudinal growth time, while showing a pronounced cellular network structure throughout the boule that can be correlated to dislocation network sizes in CZT. Higher magnification images revealed a typical Rayleigh-instability pearl string morphology with large and small satellite droplets. This study includes solidification experiments in small crucibles of 30:70 mixtures of Cd:Te to reduce the melting point below 1273 K (1000°C). These solidification experiments were performed over a wide range of cooling rates and clearly demonstrated a growth instability with Te-particle capture that is suggested to be responsible for one of the peaks in the size distribution using size discrimination visualization. The results are discussed with regard to a manifold Te-particle genesis history as 1) Te

  3. Les Houches Physics at TeV Colliders 2005 Beyond the Standard Model Working Group: Summary Report

    SciTech Connect

    Allanach, B.C.; Grojean, C.; Skands, P.; Accomando, E.; Azuelos, G.; Baer, H.; Balazs, C.; Belanger, G.; Benakli, K.; Boudjema, F.; Brelier, B.; Bunichev, V.; Cacciapaglia, G.; Carena, M.; Choudhury, D.; Delsart, P.-A.; De Sanctis, U.; Desch, K.; Dobrescu, B.A.; Dudko, L.; El Kacimi, M.; /Saclay, SPhT /CERN /Fermilab /INFN, Turin /Turin U. /Montreal U. /TRIUMF /Florida State U. /Argonne /Annecy, LAPTH /Paris, LPTHE /Moscow State U. /Cornell U., CIHEP /Delhi U. /Milan U. /INFN, Milan /Freiburg U. /Cadi Ayyad U., Marrakech /Orsay, LPT /Oslo U. /Lancaster U.

    2006-03-17

    The work contained herein constitutes a report of the ''Beyond the Standard Model'' working group for the Workshop ''Physics at TeV Colliders'', Les Houches, France, 2-20 May, 2005. We present reviews of current topics as well as original research carried out for the workshop. Supersymmetric and non-supersymmetric models are studied, as well as computational tools designed in order to facilitate their phenomenology.

  4. CdSe/ZnSe quantum dot structures grown by molecular beam epitaxy with a CdTe submonolayer stressor

    SciTech Connect

    Sedova, I. V. Lyublinskaya, O. G.; Sorokin, S. V.; Sitnikova, A. A.; Toropov, A. A.; Donatini, F.; Dang, Si Le; Ivanov, S. V.

    2007-11-15

    A procedure for formation of CdSe quantum dots (QDs) in a ZnSe matrix is suggested. The procedure is based on the introduction of a CdTe submonolayer stressor deposited on the matrix surface just before deposition of the material of the QDs. (For CdTe/ZnSe structure, the relative lattice mismatch is {delta}a/a {approx} 14%.) The stressor forms small strained islands at the ZnSe surface, thus producing local fields of high elastic stresses controlling the process of the self-assembling of the QDs. According to the data of transmission electron microscopy, this procedure allows a considerable increase in the surface density of QDs, with a certain decrease in their lateral dimensions (down to 4.5 {+-} 1.5 nm). In the photoluminescence spectra, a noticeable ({approx}150 meV) shift of the peak to longer wavelengths from the position of the reference CdSe/ZnSe QD structure is observed. The shift is due to some transformation of the morphology of the QDs and an increase in the Cd content in the QDs. Comprehensive studies of the nanostructures by recording and analyzing the excitation spectra of photoluminescence, the time-resolved photoluminescence spectra, and the cathodoluminescence spectra show that the emission spectra involve two types of optical transitions, namely, the type-I transitions in the CdSeTe/ZnSe QDs and the type-II transitions caused mainly by the low cadmium content (Zn,Cd)(Se,Te)/ZnSe layer formed between the QDs.

  5. Quantum oscillations in magnetothermopower measurements of topological insulator Bi2Te3

    SciTech Connect

    Qu, Dong -Xia; Hor, Y. S.; Cava, R. J.

    2012-12-10

    We report the magnetothermopower measurements of the nonmetallic topological insulator Bi2Te3 in magnetic fields up to 35 T. Quantum oscillations arising from surface states are observed in both thermoelectric and conductivity tensors. The inferred surface thermopower has a peak magnitude ~1 mV/K possibly as a result of surface electron and bulk phonon interaction. At the n = 1 Landau level, we resolve additional quantum oscillations signaling Landau sublevels.

  6. Model independent search for new phenomena in pp collisions at√s=1.96 TeV

    DOE PAGES [OSTI]

    Abazov, Victor Mukhamedovich; Abbott, Braden Keim; Acharya, Bannanje Sripath; Adams, Mark Raymond; Adams, Todd; Alexeev, Guennadi D; Alkhazov, Georgiy D; Alton, Andrew K; Alverson, George O; Alves, Gilvan Augusto; et al

    2012-05-24

    We describe a model independent search for physics beyond the standard model in lepton final states. We examine 117 final states using 1.1 fb-1 of pp collisions data at √s = 1.96 TeV collected with the D0 detector. We conclude that all observed discrepancies between data and model can be attributed to uncertainties in the standard model background modeling, and hence we do not see any evidence for physics beyond the standard model.

  7. Charge carrier effective mass and concentration derived from combination of Seebeck coefficient and Te125 NMR measurements in complex tellurides

    DOE PAGES [OSTI]

    Levin, E. M.

    2016-06-27

    Thermoelectric materials utilize the Seebeck effect to convert heat to electrical energy. The Seebeck coefficient (thermopower), S, depends on the free (mobile) carrier concentration, n, and effective mass, m*, as S ~ m*/n2/3. The carrier concentration in tellurides can be derived from 125Te nuclear magnetic resonance (NMR) spin-lattice relaxation measurements. The NMR spin-lattice relaxation rate, 1/T1, depends on both n and m* as 1/T1~(m*)3/2n (within classical Maxwell-Boltzmann statistics) or as 1/T1~(m*)2n2/3 (within quantum Fermi-Dirac statistics), which challenges the correct determination of the carrier concentration in some materials by NMR. Here it is shown that the combination of the Seebeck coefficientmore » and 125Te NMR spin-lattice relaxation measurements in complex tellurides provides a unique opportunity to derive the carrier effective mass and then to calculate the carrier concentration. This approach was used to study AgxSbxGe50–2xTe50, well-known GeTe-based high-efficiency tellurium-antimony-germanium-silver thermoelectric materials, where the replacement of Ge by [Ag+Sb] results in significant enhancement of the Seebeck coefficient. Thus, values of both m* and n derived using this combination show that the enhancement of thermopower can be attributed primarily to an increase of the carrier effective mass and partially to a decrease of the carrier concentration when the [Ag+Sb] content increases.« less

  8. Thermoelectric properties of chalcopyrite type CuGaTe{sub 2} and chalcostibite CuSbS{sub 2}

    SciTech Connect

    Kumar Gudelli, Vijay; Kanchana, V.; Vaitheeswaran, G.; Svane, A.; Christensen, N. E.

    2013-12-14

    Electronic and transport properties of CuGaTe{sub 2}, a hole-doped ternary copper based chalcopyrite type semiconductor, are studied using calculations within the Density Functional Theory and solving the Boltzmann transport equation within the constant relaxation time approximation. The electronic band structures are calculated by means of the full-potential linear augmented plane wave method, using the Tran-Blaha modified Becke-Johnson potential. The calculated band gap of 1.23 eV is in agreement with the experimental value of 1.2 eV. The carrier concentration- and temperature dependent thermoelectric properties of CuGaTe{sub 2} are derived, and a figure of merit of zT = 1.69 is obtained at 950 K for a hole concentration of 3.7·10{sup 19} cm{sup −3}, in agreement with a recent experimental finding of zT = 1.4, confirming that CuGaTe{sub 2} is a promising material for high temperature thermoelectric applications. The good thermoelectric performance of p-type CuGaTe{sub 2} is associated with anisotropic transport from a combination of heavy and light bands. Also for CuSbS{sub 2} (chalcostibite), a better performance is obtained for p-type than for n-type doping. The variation of the thermopower as a function of temperature and concentration suggests that CuSbS{sub 2} will be a good thermoelectric material at low temperatures, similarly to the isostructural CuBiS{sub 2} compound.

  9. Synthesis, transport properties, and electronic structure of Cu{sub 2}CdSnTe{sub 4}

    SciTech Connect

    Dong, Yongkwan; Khabibullin, Artem R.; Wei, Kaya; Ge, Zhen-Hua; Woods, Lilia M. Nolas, George S.; Martin, Joshua; Salvador, James R.

    2014-06-23

    A new stannite phase was synthesized and its temperature dependent transport properties were investigated. Cu{sub 2}CdSnTe{sub 4} possesses strong p-type conduction, while the temperature dependence of the thermal conductivity exhibits typical dielectric behavior. Electronic structure calculations allowed for a description of the transport characteristics in terms the energy band structure, density of states, and Fermi surface. The potential for thermoelectric applications is also discussed.

  10. DOE Issues Request for Information on a Hydrogen Technology Showcase and Training (HyTeST) Station

    Energy.gov [DOE]

    The U.S. Department of Energy's Fuel Cell Technologies Office has issued a request for information to obtain feedback from stakeholders regarding the construction and benefits of a National Hydrogen Technology Showcase and Training (HyTeST) station. The facility would serve as a tool for research and development, testing, safety and demonstration training, and outreach for community and commercial early adopters, including station developers, owners, code officials, first responders, operators, investors, and insurers.

  11. Thermal stability and thermoelectric properties of Cu{sub x}As{sub 40−x}Te{sub 60−y}Se{sub y} semiconducting glasses

    SciTech Connect

    Vaney, J.B.; Piarristeguy, A.; Pradel, A.; Alleno, E.; Lenoir, B.; Candolfi, C.; Dauscher, A.; Gonçalves, A.P.; Lopes, E.B.; Monnier, J.; Ribes, M.; Godart, C.

    2013-07-15

    We report on the thermal behavior and thermoelectric properties of bulk chalcogenide glasses in the systems Cu{sub x}As{sub 40−x}Te{sub 60} (20≤x≤32.5) and Cu{sub x}As{sub 40−x}Te{sub 60−y}Se{sub y}, (0≤y≤9) synthesized by conventional melt-quenching techniques. The thermal stability of these glasses was probed by differential scanning calorimetry to determine the characteristic T{sub g} and ΔT temperatures, both of which increasing noticeably with y. Thermoelectric properties were found to be mainly influenced by the Cu concentration with respect to the Se content. The thermal conductivity is practically composition-independent throughout the compositional range covered. A maximum ZT value of 0.02 at 300 K increasing to 0.06 at 375 K was achieved for the composition Cu{sub 30}As{sub 10}Te{sub 54}Se{sub 6}. - Graphical abstract: Effect of substitution of Te by Se and As by Cu on thermal stability and thermoelectric properties of Cu{sub x}As{sub 40−x}Te{sub 60−y}Se{sub y} semiconducting glasses. - Highlights: • We studied substitution of Te by Se in Cu–As–Te thermoelectric chalcogenide glasses. • Cu–As–Te–Se glasses were prepared by conventional melt-quenching method. • Se inclusion increases thermal stability in Cu–As–Te glasses. • Increasing copper concentration enhances thermoelectric properties. • ZT of 0.02 was achieved at 300 K and 0.06 at 375 K.

  12. Empirical correlations between the arrhenius' parameters of impurities' diffusion coefficients in CdTe crystals

    DOE PAGES [OSTI]

    Shcherbak, L.; Kopach, O.; Fochuk, P.; James, R. B.; Bolotnikov, A. E.

    2015-01-21

    Understanding of self- and dopant-diffusion in semiconductor devices is essential to our being able to assure the formation of well-defined doped regions. In this paper, we compare obtained in the literature up to date the Arrhenius’ parameters (D=D0exp(–ΔEa/kT)) of point-defect diffusion coefficients and the I-VII groups impurities in CdTe crystals and films. We found that in the diffusion process there was a linear dependence between the pre-exponential factor, D0, and the activation energy, ΔEa, of different species: This was evident in the self-diffusivity and isovalent impurity Hg diffusivity as well as for the dominant IIIA and IVA groups impurities andmore » Chlorine, except for the fast diffusing elements (e.g., Cu and Ag), chalcogens O, S, and Se, halogens I and Br as well as the transit impurities Mn, Co, Fe. As a result, reasons of the lack of correspondence of the data to compensative dependence are discussed.« less

  13. Competing covalent and ionic bonding in Ge-Sb-Te phase change materials

    DOE PAGES [OSTI]

    Subedi, Alaska; Siegrist, Theo; Singh, David J.; Mukhopadhyay, Saikat; Sun, Jifeng

    2016-05-19

    Ge2Sb2Te5 and related phase change materials are highly unusual in that they can be readily transformed between amorphous and crystalline states using very fast melt, quench, anneal cycles, although the resulting states are extremely long lived at ambient temperature. These states have remarkably different physical properties including very different optical constants in the visible in strong contrast to common glass formers such as silicates or phosphates. This behavior has been described in terms of resonant bonding, but puzzles remain, particularly regarding different physical properties of crystalline and amorphous phases. Here we show that there is a strong competition between ionicmore » and covalent bonding in cubic phase providing a link between the chemical basis of phase change memory property and origins of giant responses of piezoelectric materials (PbTiO3, BiFeO3). This has important consequences for dynamical behavior in particular leading to a simultaneous hardening of acoustic modes and softening of high frequency optic modes in crystalline phase relative to amorphous. As a result, this different bonding in amorphous and crystalline phases provides a direct explanation for different physical properties and understanding of the combination of long time stability and rapid switching and may be useful in finding new phase change compositions with superior properties.« less

  14. Search for Stopped Gluinos in pp collisions at sqrt s = 7 TeV

    SciTech Connect

    Khachatryan, Vardan; et al.

    2011-01-01

    The results of the first search for long-lived gluinos produced in 7 TeV pp collisions at the CERN Large Hadron Collider are presented. The search looks for evidence of long-lived particles that stop in the CMS detector and decay in the quiescent periods between beam crossings. In a dataset with a peak instantaneous luminosity of 10^{32} cm^{-2} s^{-1}, an integrated luminosity of 10 inverse picobarns, and a search interval corresponding to 62 hours of LHC operation, no significant excess above background was observed. Limits at the 95% confidence level on gluino pair production over 13 orders of magnitude of gluino lifetime are set. For a mass difference between the gluino and the neutralino greater than 100 GeV/c^2, and assuming a branching ratio for gluino to gluon+neutralino of 100%, gluinos of mass less than 370 GeV/c^2 are excluded for lifetimes from 10 microseconds to 1000 s.

  15. Empirical correlations between the arrhenius' parameters of impurities' diffusion coefficients in CdTe crystals

    SciTech Connect

    Shcherbak, L.; Kopach, O.; Fochuk, P.; James, R. B.; Bolotnikov, A. E.

    2015-01-21

    Understanding of self- and dopant-diffusion in semiconductor devices is essential to our being able to assure the formation of well-defined doped regions. In this paper, we compare obtained in the literature up to date the Arrhenius’ parameters (D=D0exp(–ΔEa/kT)) of point-defect diffusion coefficients and the I-VII groups impurities in CdTe crystals and films. We found that in the diffusion process there was a linear dependence between the pre-exponential factor, D0, and the activation energy, ΔEa, of different species: This was evident in the self-diffusivity and isovalent impurity Hg diffusivity as well as for the dominant IIIA and IVA groups impurities and Chlorine, except for the fast diffusing elements (e.g., Cu and Ag), chalcogens O, S, and Se, halogens I and Br as well as the transit impurities Mn, Co, Fe. As a result, reasons of the lack of correspondence of the data to compensative dependence are discussed.

  16. Estimation of the extragalactic background light using TeV observations of BL Lac objects

    SciTech Connect

    Sinha, Atreyee; Acharya, B. S.; Sahayanathan, S.; Godambe, S.; Misra, R. E-mail: acharya@tifr.res.in E-mail: gsagar@barc.ernet.in

    2014-11-01

    The very high-energy (VHE) gamma-ray spectral index of high-energy peaked blazars correlates strongly with its corresponding redshift, whereas no such correlation is observed in the X-ray or GeV bands. We attribute this correlation to photon-photon absorption of TeV photons with the extragalactic background light (EBL), and utilizing this we compute the allowed flux range for the EBL, which is independent of previous estimates. The observed VHE spectrum of the sources in our sample can be well approximated by a power law, and if the de-absorbed spectrum is also assumed to be a power law, then we show that the spectral shape of EBL will be εn(ε) ∼ klog (ε/ε {sub p}). We estimate the range of values for the parameters defining the EBL spectrum, k and ε {sub p}, such that the correlation of the intrinsic VHE spectrum with redshift is nullified. The estimated EBL depends only on the observed correlation and the assumption of a power-law source spectrum. Specifically, it does not depend on the spectral modeling or radiative mechanism of the sources or on any theoretical shape of the EBL spectrum obtained through cosmological calculations. The estimated EBL spectrum is consistent with the upper and lower limits imposed by different observations. Moreover, it also agrees closely with the theoretical estimates obtained through cosmological evolution models.

  17. Magnetic order tuned by Cu substitution in Fe1.1–zCuzTe

    DOE PAGES [OSTI]

    Wen, Jinsheng; Xu, Zhijun; Xu, Guangyong; Lumsden, M. D.; Valdivia, P. N.; Bourret-Courchesne, E.; Gu, Genda; Lee, Dung-Hai; Tranquada, J. M.; Birgeneau, R. J.

    2012-07-02

    We study the effects of Cu substitution in Fe₁.₁Te, the nonsuperconducting parent compound of the iron-based superconductor, Fe₁₊yTe₁₋xSex, utilizing neutron scattering techniques. It is found that the structural and magnetic transitions, which occur at ~60 K without Cu, are monotonically depressed with increasing Cu content. By 10% Cu for Fe, the structural transition is hardly detectable, and the system becomes a spin glass below 22 K, with a slightly incommensurate ordering wave vector of (0.5–δ, 0, 0.5) with δ being the incommensurability of 0.02, and correlation length of 12 Å along the a axis and 9 Å along the cmore » axis. With 4% Cu, both transition temperatures are at 41 K, though short-range incommensurate order at (0.42, 0, 0.5) is present at 60 K. With further cooling, the incommensurability decreases linearly with temperature down to 37 K, below which there is a first-order transition to a long-range almost-commensurate antiferromagnetic structure. A spin anisotropy gap of 4.5 meV is also observed in this compound. Our results show that the weakly magnetic Cu has a large effect on the magnetic correlations; it is suggested that this is caused by the frustration of the exchange interactions between the coupled Fe spins.« less

  18. Complete genome sequence of Veillonella parvula type strain (Te3T)

    SciTech Connect

    Gronow, Sabine; Welnitz, Sabine; Lapidus, Alla L.; Nolan, Matt; Ivanova, N; Glavina Del Rio, Tijana; Copeland, A; Chen, Feng; Tice, Hope; Pitluck, Sam; Cheng, Jan-Fang; Saunders, Elizabeth H; Brettin, Thomas S; Han, Cliff; Detter, J. Chris; Bruce, David; Goodwin, Lynne A.; Land, Miriam L; Hauser, Loren John; Chang, Yun-Juan; Jeffries, Cynthia; Pati, Amrita; Mavromatis, K; Mikhailova, Natalia; Chen, Amy; Palaniappan, Krishna; Chain, Patrick S. G.; Rohde, Manfred; Goker, Markus; Bristow, James; Eisen, Jonathan; Markowitz, Victor; Hugenholtz, Philip; Kyrpides, Nikos C; Klenk, Hans-Peter; Lucas, Susan

    2010-01-01

    Veillonella parvula (Veillon and Zuber 1898) Pr vot 1933 is the type species of the genus Veillonella in the family Veillonellaceae within the order Clostridiales. The species V. parvula is of interest because it is frequently isolated from dental plaque in the human oral cavity and can cause opportunistic infections. The species is strictly anaerobic and grows as small cocci which usually occur in pairs. Veillonellae are characterized by their unusual metabolism which is centered on the activity of the enzyme methylmalonyl-CoA decarboxylase. Strain Te3T, the type strain of the species, was isolated from the human intestinal tract. Here we describe the features of this organism, together with the complete genome sequence, and annotation. This is the first complete genome sequence of a member of the large clostridial family Veillonellaceae, and the 2,132,142 bp long single replicon genome with its 1859 protein-coding and 61 RNA genes is part of the Genomic Encyclopedia of Bacteria and Archaea project.

  19. Diffractive dijet production in p?p collisions at ?s=1.96 TeV

    SciTech Connect

    Aaltonen, T.; Albrow, M.; lvarez Gonzlez, B.; Amerio, S.; Amidei, D.; Anastassov, A.; Annovi, A.; Antos, J.; Apollinari, G.; Appel, J. A.; Arisawa, T.; Artikov, A.; Asaadi, J.; Ashmanskas, W.; Auerbach, B.; Aurisano, A.; Azfar, F.; Badgett, W.; Bae, T.; Barbaro-Galtieri, A.; Barnes, V. E.; Barnett, B. A.; Barria, P.; Bartos, P.; Bauce, M.; Bedeschi, F.; Behari, S.; Bellettini, G.; Bellinger, J.; Benjamin, D.; Beretvas, A.; Bhatti, A.; Bisello, D.; Bizjak, I.; Bland, K. R.; Blumenfeld, B.; Bocci, A.; Bodek, A.; Bortoletto, D.; Boudreau, J.; Boveia, A.; Brigliadori, L.; Bromberg, C.; Brucken, E.; Budagov, J.; Budd, H. S.; Burkett, K.; Busetto, G.; Bussey, P.; Buzatu, A.; Calamba, A.; Calancha, C.; Camarda, S.; Campanelli, M.; Campbell, M.; Canelli, F.; Carls, B.; Carlsmith, D.; Carosi, R.; Carrillo, S.; Carron, S.; Casal, B.; Casarsa, M.; Castro, A.; Catastini, P.; Cauz, D.; Cavaliere, V.; Cavalli-Sforza, M.; Cerri, A.; Cerrito, L.; Chen, Y. C.; Chertok, M.; Chiarelli, G.; Chlachidze, G.; Chlebana, F.; Cho, K.; Chokheli, D.; Chung, W. H.; Chung, Y. S.; Ciocci, M. A.; Clark, A.; Clarke, C.; Compostella, G.; Convery, M. E.; Conway, J.; Corbo, M.; Cordelli, M.; Cox, C. A.; Cox, D. J.; Crescioli, F.; Cuevas, J.; Culbertson, R.; Dagenhart, D.; dAscenzo, N.; Datta, M.; de Barbaro, P.; DellOrso, M.; Demortier, L.; Deninno, M.; Devoto, F.; dErrico, M.; Di Canto, A.; Di Ruzza, B.; Dittmann, J. R.; DOnofrio, M.; Donati, S.; Dong, P.; Dorigo, M.; Dorigo, T.; Ebina, K.; Elagin, A.; Eppig, A.; Erbacher, R.; Errede, S.; Ershaidat, N.; Eusebi, R.; Farrington, S.; Feindt, M.; Fernandez, J. P.; Field, R.; Flanagan, G.; Forrest, R.; Frank, M. J.; Franklin, M.; Freeman, J. C.; Funakoshi, Y.; Furic, I.; Gallinaro, M.; Garcia, J. E.; Garfinkel, A. F.; Garosi, P.; Gerberich, H.; Gerchtein, E.; Giagu, S.; Giakoumopoulou, V.; Giannetti, P.; Gibson, K.; Ginsburg, C. M.; Giokaris, N.; Giromini, P.; Giurgiu, G.; Glagolev, V.; Glenzinski, D.; Gold, M.; Goldin, D.; Goldschmidt, N.; Golossanov, A.; Gomez, G.; Gomez-Ceballos, G.; Goncharov, M.; Gonzlez, O.; Gorelov, I.; Goshaw, A. T.; Goulianos, K.; Grinstein, S.; Grosso-Pilcher, C.; Group, R. C.; Guimaraes da Costa, J.; Hahn, S. R.; Halkiadakis, E.; Hamaguchi, A.; Han, J. Y.; Happacher, F.; Hara, K.; Hare, D.; Hare, M.; Harr, R. F.; Hatakeyama, K.; Hays, C.; Heck, M.; Heinrich, J.; Herndon, M.; Hewamanage, S.; Hocker, A.; Hopkins, W.; Horn, D.; Hou, S.; Hughes, R. E.; Hurwitz, M.; Husemann, U.; Hussain, N.; Hussein, M.; Huston, J.; Introzzi, G.; Iori, M.; Ivanov, A.; James, E.; Jang, D.; Jayatilaka, B.; Jeon, E. J.; Jindariani, S.; Jones, M.; Joo, K. K.; Jun, S. Y.; Junk, T. R.; Kamon, T.; Karchin, P. E.; Kasmi, A.; Kato, Y.; Ketchum, W.; Keung, J.; Khotilovich, V.; Kilminster, B.; Kim, D. H.; Kim, H. S.; Kim, J. E.; Kim, M. J.; Kim, S. B.; Kim, S. H.; Kim, Y. K.; Kim, Y. J.; Kimura, N.; Kirby, M.; Klimenko, S.; Knoepfel, K.; Kondo, K.; Kong, D. J.; Konigsberg, J.; Kotwal, A. V.; Kreps, M.; Kroll, J.; Krop, D.; Kruse, M.; Krutelyov, V.; Kuhr, T.; Kurata, M.; Kwang, S.; Laasanen, A. T.; Lami, S.; Lammel, S.; Lancaster, M.; Lander, R. L.; Lannon, K.; Lath, A.; Latino, G.; LeCompte, T.; Lee, E.; Lee, H. S.; Lee, J. S.; Lee, S. W.; Leo, S.; Leone, S.; Lewis, J. D.; Limosani, A.; Lin, C.-J.; Lindgren, M.; Lipeles, E.; Lister, A.; Litvintsev, D. O.; Liu, C.; Liu, H.; Liu, Q.; Liu, T.; Lockwitz, S.; Loginov, A.; Lucchesi, D.; Lueck, J.; Lujan, P.; Lukens, P.; Lungu, G.; Lys, J.; Lysak, R.; Madrak, R.; Maeshima, K.; Maestro, P.; Malik, S.; Manca, G.; Manousakis-Katsikakis, A.; Margaroli, F.; Marino, C.; Martnez, M.; Mastrandrea, P.; Matera, K.; Mattson, M. E.; Mazzacane, A.; Mazzanti, P.; McFarland, K. S.; McIntyre, P.; McNulty, R.; Mehta, A.; Mehtala, P.; Mesropian, C.; Miao, T.; Mietlicki, D.; Mitra, A.; Miyake, H.; Moed, S.; Moggi, N.; Mondragon, M. N.; Moon, C. S.; Moore, R.; Morello, M. J.; Morlock, J.; Movilla Fernandez, P.; Mukherjee, A.; Muller, Th.; Murat, P.; Mussini, M.; Nachtman, J.; Nagai, Y.; Naganoma, J.; Nakano, I.; Napier, A.; Nett, J.; Neu, C.; Neubauer, M. S.; Nielsen, J.; Nodulman, L.; Noh, S. Y.; Norniella, O.; Oakes, L.; Oh, S. H.; Oh, Y. D.; Oksuzian, I.; Okusawa, T.; Orava, R.; Ortolan, L.; Pagan Griso, S.; Pagliarone, C.; Palencia, E.; Papadimitriou, V.; Paramonov, A. A.; Patrick, J.; Pauletta, G.; Paulini, M.; Paus, C.; Pellett, D. E.; Penzo, A.; Phillips, T. J.; Piacentino, G.; Pianori, E.; Pilot, J.; Pitts, K.; Plager, C.; Pondrom, L.; Poprocki, S.; Potamianos, K.; Prokoshin, F.; Pranko, A.; Ptohos, F.; Punzi, G.; Rahaman, A.; Ramakrishnan, V.; Ranjan, N.; Redondo, I.; Renton, P.; Rescigno, M.; Riddick, T.; Rimondi, F.; Ristori, L.; Robson, A.; Rodrigo, T.; Rodriguez, T.; Rogers, E.; Rolli, S.; Roser, R.; Ruffini, F.; Ruiz, A.; Russ, J.; Rusu, V.; Safonov, A.

    2012-08-01

    We report on a study of diffractive dijet production in p?p collisions at s?=1.96 TeV using the CDF II detector at the Fermilab Tevatron p?p collider. A data sample from 310 pb? of integrated luminosity collected by triggering on a high transverse energy jet, EjetT, in coincidence with a recoil antiproton detected in a Roman pot spectrometer is used to measure the ratio of single-diffractive to inclusive-dijet event rates as a function of xp? of the interacting parton in the antiproton, the Bjorken-x, xp?Bj, and a Q?(EjetT) in the ranges 10?p?Bj<10? and 10p?<0.09 and a four-momentum transfer squared tp?>-4 GeV. The tp? dependence is measured as a function of Q and xp?Bj and compared with that of inclusive single diffraction dissociation. We find weak xp?Bj and Q dependencies in the ratio of single diffractive to inclusive event rates, and no significant Q dependence in the diffractive tp? distributions.

  20. Strong lensing probability in TeVeS (tensor-vector-scalar) theory

    SciTech Connect

    Chen Daming

    2008-01-15

    We recalculate the strong lensing probability as a function of the image separation in TeVeS (tensor-vector-scalar) cosmology, which is a relativistic version of MOND (MOdified Newtonian Dynamics). The lens is modeled by the Hernquist profile. We assume an open cosmology with {Omega}{sub b} = 0.04 and {Omega}{sub {Lambda}} = 0.5 and three different kinds of interpolating functions. Two different galaxy stellar mass functions (GSMF) are adopted: PHJ (Panter, Heavens and Jimenez 2004 Mon. Not. R. Astron. Soc. 355 764) determined from SDSS data release 1 and Fontana (Fontana et al 2006 Astron. Astrophys. 459 745) from GOODS-MUSIC catalog. We compare our results with both the predicted probabilities for lenses from singular isothermal sphere galaxy halos in LCDM (Lambda cold dark matter) with a Schechter-fit velocity function, and the observational results for the well defined combined sample of the Cosmic Lens All-Sky Survey (CLASS) and Jodrell Bank/Very Large Array Astrometric Survey (JVAS). It turns out that the interpolating function {mu}(x) = x/(1+x) combined with Fontana GSMF matches the results from CLASS/JVAS quite well.

  1. Inclusive b-jet production in pp collisions at sqrt(s)=7 TeV

    SciTech Connect

    Chatrchyan, Serguei; et al.

    2012-04-01

    The inclusive b-jet production cross section in pp collisions at a center-of-mass energy of 7 TeV is measured using data collected by the CMS experiment at the LHC. The cross section is presented as a function of the jet transverse momentum in the range 18 < pT < 200 GeV for several rapidity intervals. The results are also given as the ratio of the b-jet production cross section to the inclusive jet production cross section. The measurement is performed with two different analyses, which differ in their trigger selection and b-jet identification: a jet analysis that selects events with a b jet using a sample corresponding to an integrated luminosity of 34 inverse picobarns, and a muon analysis requiring a b jet with a muon based on an integrated luminosity of 3 inverse picobarns. In both approaches the b jets are identified by requiring a secondary vertex. The results from the two methods are in agreement with each other and with next-to-leading order calculations, as well as with predictions based on the PYTHIA event generator.

  2. Spatial potential ripples of azimuthal surface modes in topological insulator Bi2Te3 nanowires

    DOE PAGES [OSTI]

    Muñoz Rojo, Miguel; Zhang, Yingjie; Manzano, Cristina V.; Alvaro, Raquel; Gooth, Johannes; Salmeron, Miquel; Martin-Gonzalez, Marisol

    2016-01-11

    Topological insulators (TI) nanowires (NW) are an emerging class of structures, promising both novel quantum effects and potential applications in low-power electronics, thermoelectrics and spintronics. However, investigating the electronic states of TI NWs is complicated, due to their small lateral size, especially at room temperature. Here, we perform scanning probe based nanoscale imaging to resolve the local surface potential landscapes of Bi2Te3 nanowires (NWs) at 300 K. We found equipotential rings around the NWs perimeter that we attribute to azimuthal 1D modes. Along the NW axis, these modes are altered, forming potential ripples in the local density of states, duemore » to intrinsic disturbances. Potential mapping of electrically biased NWs enabled us to accurately determine their conductivity which was found to increase with the decrease of NW diameter, consistent with surface dominated transport. Finally, our results demonstrate that TI NWs can pave the way to both exotic quantum states and novel electronic devices.« less

  3. Spectroscopic evidence for a type II Weyl semimetallic state in MoTe2

    DOE PAGES [OSTI]

    Huang, Lunan; McCormick, Timothy M.; Ochi, Masayuki; Zhao, Zhiying; Suzuki, Michi -To; Arita, Ryotaro; Wu, Yun; Mou, Daixiang; Cao, Huibo; Yan, Jiaqiang; et al

    2016-07-11

    In a type I Dirac or Weyl semimetal, the low-energy states are squeezed to a single point in momentum space when the chemical potential μ is tuned precisely to the Dirac/Weyl point1, 2, 3, 4, 5, 6. Recently, a type II Weyl semimetal was predicted to exist, where the Weyl states connect hole and electron bands, separated by an indirect gap7, 8, 9, 10. This leads to unusual energy states, where hole and electron pockets touch at the Weyl point. Here we present the discovery of a type II topological Weyl semimetal state in pure MoTe2, where two sets ofmore » Weyl points (W±2 , W±3) exist at the touching points of electron and hole pockets and are located at different binding energies above EF. Using angle-resolved photoemission spectroscopy, modelling, density functional theory and calculations of Berry curvature, we identify the Weyl points and demonstrate that they are connected by different sets of Fermi arcs for each of the two surface terminations. We also find new surface ‘track states’ that form closed loops and are unique to type II Weyl semimetals. Lastly, this material provides an exciting, new platform to study the properties of Weyl fermions.« less

  4. Interactions between N-acetyl-L-cysteine protected CdTe quantum dots and doxorubicin through spectroscopic method

    SciTech Connect

    Yang, Xiupei; Lin, Jia; Liao, Xiulin; Zong, Yingying; Gao, Huanhuan

    2015-06-15

    Highlights: • CdTe quantum dots with the diameter of 3–5 nm were synthesized in aqueous solution. • The modified CdTe quantum dots showed well fluorescence properties. • The interaction between the CdTe quantum dots and doxorubicin (DR) was investigated. - Abstract: N-acetyl-L-cysteine protected cadmium telluride quantum dots with a diameter of 3–5 nm were synthesized in aqueous solution. The interaction between N-acetyl-L-cysteine/cadmium telluride quantum dots and doxorubicin was investigated by ultraviolet–visible absorption and fluorescence spectroscopy at physiological conditions (pH 7.2, 37 °C). The results indicate that electron transfer has occurred between N-acetyl-L-cysteine/cadmium telluride quantum dots and doxorubicin under light illumination. The quantum dots react readily with doxorubicin to form a N-acetyl-L-cysteine/cadmium telluride-quantum dots/doxorubicin complex via electrostatic attraction between the −NH{sub 3}{sup +} moiety of doxorubicin and the −COO{sup −} moiety of N-acetyl-L-cysteine/cadmium telluride quantum dots. The interaction of N-acetyl-L-cysteine/cadmium telluride-quantum dots/doxorubicin complex with bovine serum albumin was studied as well, showing that the complex might induce the conformation change of bovine serum due to changes in microenvironment of bovine serum.

  5. Functional glass slides for in vitro evaluation of interactions between osteosarcoma TE85 cells and mineral-binding ligands

    SciTech Connect

    Song, Jie; Chen, Julia; Klapperich, Catherine M.; Eng, Vincent; Bertozzi, Carolyn R.

    2004-07-20

    Primary amine-functionalized glass slides obtained through a multi-step plasma treatment were conjugated with anionic amino acids that are frequently found as mineral binding elements in acidic extracellular matrix components of natural bone. The modified glass surfaces were characterized by X-ray photoelectron spectroscopy (XPS) and contact angle measurements. Human osteosarcoma TE85 cells were cultured on these functionalized slides and analyses on both protein and gene expression levels were performed to probe the ''biocompatibility'' of the surface ligands. Cell attachment and proliferation on anionic surfaces were either better than or comparable to those of cells cultured on tissue culture polystyrene (TCPS). The modified glass surfaces promoted the expression of osteocalcin, alkaline phosphatase activity and ECM proteins such as fibronectin and vitronectin under differentiation culture conditions. Transcript analysis using gene chip microarrays confirmed that culturing TE85 cells on anionic surfaces did not activate apoptotic pathways. Collectively, these results suggest that the potential mineral-binding anionic ligands examined here do not exert significant adverse effects on the expression of important osteogenic markers of TE85 cells. This work paves the way for the incorporation of these ligands into 3-dimensional artificial bone-like scaffolds.

  6. Electron interactions and Dirac fermions in graphene-Ge{sub 2}Sb{sub 2}Te{sub 5} superlattices

    SciTech Connect

    Sa, Baisheng; Sun, Zhimei

    2014-06-21

    Graphene based superlattices have been attracted worldwide interest due to the combined properties of the graphene Dirac cone feature and all kinds of advanced functional materials. In this work, we proposed a novel series of graphene-Ge{sub 2}Sb{sub 2}Te{sub 5} superlattices based on the density functional theory calculations. We demonstrated the stability in terms of energy and lattice dynamics for such kind of artificial materials. The analysis of the electronic structures unravels the gap opening nature at Dirac cone of the insert graphene layer. The Dirac fermions in the graphene layers are strongly affected by the electron spin orbital coupling in the Ge{sub 2}Sb{sub 2}Te{sub 5} layers. The present results show the possible application in phase-change data storage of such kind of superlattice materials, where the Ge{sub 2}Sb{sub 2}Te{sub 5} layers exhibit as the phase-change data storage media and the graphene layer works as the electrode, probe, and heat conductor.

  7. Search for Dilepton Resonances in pp Collisions at √s=7 TeV with the ATLAS Detector

    DOE PAGES [OSTI]

    Aad, G.; Abbott, B.; Abdallah, J.; Abdelalim, A. A.; Abdesselam, A.; Abdinov, O.; Abi, B.; Abolins, M.; Abramowicz, H.; Abreu, H.; et al

    2011-12-29

    This Letter reports on a search for narrow high-mass resonances decaying into dilepton final states. The data were recorded by the ATLAS experiment in pp collisions at √s=7 TeV at the Large Hadron Collider and correspond to a total integrated luminosity of 1.08 (1.21) fb⁻¹ in the e⁺e⁻ (μ⁺μ⁻) channel. No statistically significant excess above the standard model expectation is observed and upper limits are set at the 95% C.L. on the cross section times branching fraction of Z' resonances and Randall-Sundrum gravitons decaying into dileptons as a function of the resonance mass. A lower mass limit of 1.83 TeVmore » on the sequential standard model Z' boson is set. A Randall-Sundrum graviton with coupling k/M¯¯¯¯Pl=0.1 is excluded at 95% C.L. for masses below 1.63 TeV.« less

  8. Effect of nanoscale tin-dioxide layers on the efficiency of CdS/CdTe-based film solar elements

    SciTech Connect

    Khrypunov, G. S. Pirohov, O. V.; Gorstka, T. A.; Novikov, V. A.; Kovtun, N. A.

    2015-03-15

    Comparative investigations of the output parameters and optical diode characteristics of ITO/CdS/CdTe/Cu/Au and SnO{sub 2}: F/CdS/CdTe/Cu/Au film solar cells are carried out with the aim of optimizing the design of the front electrodes. It is established that the high voltage and large filling factor of the solar elements with SnO{sub 2}: F films are caused by a lower diode saturation current density and series resistance due to the stability of the crystal structure and electrical properties of these films against chloride treatment of the base layer during device fabrication. At the same time, solar elements with an ITO front electrode exhibit a higher short-circuit current density due to the larger average light transmittance of the ITO layers. The use of nanoscale SnO{sub 2} layers in the ITO front contacts allows the efficiency of the CdS/CdTe-based solar elements to be enhanced to 11.4% on account of stabilization of the crystal structure and electrical properties of the ITO films and a possible reduction in the cadmium-sulphide-layer thickness without shunting the device structure.

  9. Search for $$W' \\to tb$$ in proton-proton collisions at $$\\sqrt{s} = $$ 8 TeV

    DOE PAGES [OSTI]

    Khachatryan, Vardan

    2016-02-18

    A search is performed for the production of a massive W' boson decaying to a top and a bottom quark. The data analysed correspond to an integrated luminosity of 19.7 fbmore » $$^{–1}$$ collected with the CMS detector at the LHC in proton-proton collisions at $$ \\sqrt{s}=8 $$ TeV. The hadronic decay products of the top quark with high Lorentz boost from the W' boson decay are detected as a single top flavoured jet. The use of jet substructure algorithms allows the top quark jet to be distinguished from standard model QCD background. Limits on the production cross section of a right-handed W' boson are obtained, together with constraints on the left-handed and right-handed couplings of the W' boson to quarks. The production of a right-handed W' boson with a mass below 2.02 TeV decaying to a hadronic final state is excluded at 95% confidence level. Furthermore, this mass limit increases to 2.15 TeV when both hadronic and leptonic decays are considered, and is the most stringent lower mass limit to date in the tb decay mode.« less

  10. Optic phonon bandwidth and lattice thermal conductivity: The case of Li2X ( X=O , S, Se, Te)

    DOE PAGES [OSTI]

    Mukhopadhyay, S.; Lindsay, L.; Parker, D. S.

    2016-06-07

    Here, we examine the lattice thermal conductivities ( l) of Li2X (X=O, S, Se, Te) using a first-principles Peierls-Boltzmann transport methodology. We find low l values ranging between 12 and 30 W/m-K despite light Li atoms, a large mass difference between constituent atoms and tightly bunched acoustic branches, all features that give high l in other materials including BeSe (630 W/m-1K-1), BeTe (370 W/m-1K-1) and cubic BAs (3150 W/m-1K-1). Together these results suggest a missing ingredient in the basic guidelines commonly used to understand and predict l. Unlike typical simple systems (e.g., Si, GaAs, SiC), the dominant resistance to heat-carryingmore » acoustic phonons in Li2Se and Li2Te comes from interactions of these modes with two optic phonons. These interactions require significant bandwidth and dispersion of the optic branches, both present in Li2X materials. Finally, these considerations are important for the discovery and design of new materials for thermal management applications, and give a more comprehensive understanding of thermal transport in crystalline solids.« less

  11. Search for resonances in diphoton events at $$\\sqrt{s}=13 $$ TeV with the ATLAS detector

    DOE PAGES [OSTI]

    Aaboud, M.; Aad, G.; Abbott, B.; Abdallah, J.; Abdinov, O.; Abeloos, B.; Aben, R.; AbouZeid, O. S.; Abraham, N. L.; Abramowicz, H.; et al

    2016-09-01

    Searches for new resonances decaying into two photons in the ATLAS experiment at the CERN Large Hadron Collider are described. The analysis is based on proton-proton collision data corresponding to an integrated luminosity of 3.2 fb–1 at √s = 13 TeV recorded in 2015. Two searches are performed, one targeted at a spin-2 particle of mass larger than 500 GeV, using Randall-Sundrum graviton states as a benchmark model, and one optimized for a spin-0 particle of mass larger than 200 GeV. Varying both the mass and the decay width, the most significant deviation from the background-only hypothesis is observed atmore » a diphoton invariant mass around 750 GeV with local significances of 3.8 and 3.9 standard deviations in the searches optimized for a spin-2 and spin-0 particle, respectively. The global significances are estimated to be 2.1 standard deviations for both analyses. As a result, the consistency between the data collected at 13 TeV and 8 TeV is also evaluated. Limits on the production cross section times branching ratio to two photons for the two resonance types are reported.« less

  12. A CdTe position sensitive detector for a hard X- and gamma-ray wide field camera

    SciTech Connect

    Caroli, E.; Cesare, G. de; Donati, A.; Dusi, W.; Landini, G.; Stephen, J.B.; Perotti, F.

    1998-12-31

    An important region of the electromagnetic spectrum for astrophysics is the hard X- and gamma ray band between 10 keV and a few MeV, where several processes occur in a wide variety of objects and with different spatial distribution and time scales. In order to fulfill the observational requirements in this energy range and taking into account the opportunities given by small/medium size missions (e.g., on the ISS), the authors have proposed a compact, wide field camera based on a thick (1 cm) position sensitive CdTe detector (PSD). The detector is made of an array of 128x96 CdTe microspectrometers with a pixel size of 2x2 mm{sup 2}. The basic element of the PSD is the linear module that is an independent detection unit with 32 CdTe crystals and monolithic front-electronics (ASIC) supported by a thin (300 {micro}m) ceramic layer. The expected performance of the PSD over the operative energy range and some of the required ASIC functionality are presented and discussed.

  13. Magnetic structure and phase stability of the van der Waals bonded ferromagnet Fe3-xGeTe2

    DOE PAGES [OSTI]

    May, Andrew F.; Calder, Stuart A.; Cantoni, Claudia; Cao, Huibo; McGuire, Michael A.

    2016-01-08

    The magnetic structure and phase diagram of the layered ferromagnetic compound Fe3GeTe2 have been investigated by a combination of synthesis, x-ray and neutron diffraction, high-resolution microscopy, and magnetization measurements. Single crystals were synthesized by self-flux reactions, and single-crystal neutron diffraction finds ferromagnetic order with moments of 1.11(5)μB/Fe aligned along the c axis at 4 K. These flux-grown crystals have a lower Curie temperature Tc ≈ 150 K than crystals previously grown by vapor transport (Tc = 220 K). The difference is a reduced Fe content in the flux-grown crystals, as illustrated by the behavior observed in a series of polycrystallinemore » samples. As Fe content decreases, so do the Curie temperature, magnetic anisotropy, and net magnetization. Furthermore, Hall-effect and thermoelectric measurements on flux-grown crystals suggest that multiple carrier types contribute to electrical transport in Fe3–xGeTe2 and structurally similar Ni3–xGeTe2.« less

  14. Two-dimensional topological insulators with tunable band gaps: Single-layer HgTe and HgSe

    DOE PAGES [OSTI]

    Li, Jin; He, Chaoyu; Meng, Lijun; Xiao, Huaping; Tang, Chao; Wei, Xiaolin; Kim, Jinwoong; Kioussis, Nicholas; Stocks, G. Malcolm; Zhong, Jianxin

    2015-09-14

    Here, we report that two-dimensional (2D) topological insulators (TIs) with large band gaps are of great importance for the future applications of quantum spin Hall (QSH) effect. Employing ab initio electronic calculations we propose a novel type of 2D topological insulators, the monolayer (ML) low-buckled (LB) mercury telluride (HgTe) and mercury selenide (HgSe), with tunable band gap. We demonstrate that LB HgTe (HgSe) monolayers undergo a trivial insulator to topological insulator transition under in-plane tensile strain of 2.6% (3.1%) due to the combination of the strain and the spin orbital coupling (SOC) effects. Furthermore, the band gaps can be tunedmore » up to large values (0.2 eV for HgTe and 0.05 eV for HgSe) by tensile strain, which far exceed those of current experimentally realized 2D quantum spin Hall insulators. Our results suggest a new type of material suitable for practical applications of 2D TI at room-temperature.« less

  15. Enhanced thermoelectric performance and novel nanopores in AgSbTe{sub 2} prepared by melt spinning

    SciTech Connect

    Du, Baoli; Li, Han; Xu, Jingjing; Tang, Xinfeng; Uher, Ctirad

    2011-01-15

    We report a melt-spinning spark-plasma-sintering synthesis process of the polycrystalline p-type material composed of AgSbTe{sub 2} coarse grains and evenly formed 5-10 nm pores that occur primarily on the surface of matrix grains. The formation mechanism of nanopores and their influences on the thermoelectric properties have been studied and correlated. Microstructure analysis shows that the as-prepared sample can be regarded as a nanocomposite of matrix and in situ generated nanopores evenly coated on matrix grains. For the single-phase component and the possible energy-filter effect caused by the nanopores, the electrical transport properties are improved. Moreover, the thermal conductivity is significantly reduced by strong phonon scattering effect resulted from the nanopores. The thermoelectric performance of the as prepared sample enhances greatly and a ZT of 1.65 at 570 K is achieved, increasing{approx}200% compared with the sample prepared by traditional melt and slow-cooling method. -- Graphical abstract: Representative nanostructure of AgSbTe{sub 2} sample (a) ribbons obtained after melt spinning (b) bulk AgSbTe{sub 2} material obtained after spark plasma sintering. Display Omitted

  16. Study of asymmetries of Cd(Zn)Te devices investigated using photo-induced current transient spectroscopy, Rutherford backscattering, surface photo-voltage spectroscopy, and gamma ray spectroscopies

    SciTech Connect

    Crocco, J.; Bensalah, H.; Zheng, Q.; Dieguez, E.; Corregidor, V.; Avles, E.; Castaldini, A.; Fraboni, B.; Cavalcoli, D.; Cavallini, A.; Vela, O.

    2012-10-01

    Despite these recent advancements in preparing the surface of Cd(Zn)Te devices for detector applications, large asymmetries in the electronic properties of planar Cd(Zn)Te detectors are common. Furthermore, for the development of patterned electrode geometries, selection of each electrode surface is crucial for minimizing dark current in the device. This investigation presented here has been carried out with three objectives. Each objective is oriented towards establishing reliable methods for the selection of the anode and cathode surfaces independent of the crystallographic orientation. The objectives of this study are (i) investigate how the asymmetry in I-V characteristics of Cd(Zn)Te devices may be associated with the TeO2 interfacial layer using Rutherford backscattering to study the structure at the Au-Cd(Zn)Te interface, (ii) develop an understanding of how the concentration of the active traps in Cd(Zn)Te varies with the external bias, and (iii) propose non-destructive methods for selection of the anode and cathode which are independent of crystallographic orientation. The spectroscopic methods employed in this investigation include Rutherford backscattering spectroscopy, photo-induced current transient spectroscopy, and surface photo-voltage spectroscopy, as well as gamma ray spectroscopy to demonstrate the influence on detector properties.

  17. Enhanced thermoelectric performance driven by high-temperature phase transition in the phase change material Ge4SbTe5

    DOE PAGES [OSTI]

    Williams, Jared B.; Lara-Curzio, Edgar; Cakmak, Ercan; Watkins, Thomas R.; Morelli, Donald T.

    2015-05-15

    Phase change materials are identified for their ability to rapidly alternate between amorphous and crystalline phases and have large contrast in the optical/electrical properties of the respective phases. The materials are primarily used in memory storage applications, but recently they have also been identified as potential thermoelectric materials. Many of the phase change materials researched today can be found on the pseudo-binary (GeTe)1-x(Sb2Te3)x tie-line. While many compounds on this tie-line have been recognized as thermoelectric materials, here we focus on Ge4SbTe5, a single phase compound just off of the (GeTe)1-x(Sb2Te3)x tie-line, that forms in a stable rocksalt crystal structure atmore » room temperature. We find that stoichiometric and undoped Ge4SbTe5 exhibits a thermal conductivity of ~1.2 W/m-K at high temperature and a large Seebeck coefficient of ~250 μV/K. The resistivity decreases dramatically at 623 K due to a structural phase transition which lends to a large enhancement in both thermoelectric power factor and thermoelectric figure of merit at 823 K. In a more general sense the research presents evidence that phase change materials can potentially provide a new route to highly efficient thermoelectric materials for power generation at high temperature.« less

  18. Cd{sub 1−x}Mn{sub x}Te ultrasmall quantum dots growth in a silicate glass matrix by the fusion method

    SciTech Connect

    Dantas, Noelio Oliveira; Lima Fernandes, Guilherme de; Almeida Silva, Anielle Christine; Baffa, Oswaldo; Gómez, Jorge Antônio

    2014-09-29

    In this study, we synthesized Cd{sub 1−x}Mn{sub x}Te ultrasmall quantum dots (USQDs) in SiO{sub 2}-Na{sub 2}CO{sub 3}-Al{sub 2}O{sub 3}-B{sub 2}O{sub 3} glass system using the fusion method. Growth of these Cd{sub 1−x}Mn{sub x}Te USQDs was confirmed by optical absorption, atomic force microscopy (AFM), magnetic force microscopy (MFM), scanning transmission electron microscopy (TEM), and electron paramagnetic resonance (EPR) measurements. The blueshift of absorption transition with increasing manganese concentration gives evidence of incorporation of manganese ions (Mn{sup 2+}) in CdTe USQDs. AFM, TEM, and MFM confirmed, respectively, the formation of high quality Cd{sub 1−x}Mn{sub x}Te USQDs with uniformly distributed size and magnetic phases. Furthermore, EPR spectra showed six lines associated to the S = 5/2 spin half-filled d-state, characteristic of Mn{sup 2+}, and confirmed that Mn{sup 2+} are located in the sites core and surface of the CdTe USQD. Therefore, synthesis of high quality Cd{sub 1−x}Mn{sub x}Te USQDs may allow the control of optical and magnetic properties.

  19. Ce{sub 2}AgYb{sub 5/3}Se{sub 6}, La{sub 2}CuErTe{sub 5}, and Ce{sub 2}CuTmTe{sub 5}: Three new quaternary interlanthanide chalcogenides

    SciTech Connect

    Babo, Jean-Marie; Albrecht-Schmitt, Thomas E.

    2013-01-15

    Three new ordered quaternary interlanthanide chalcogenides, Ce{sub 2}AgYb{sub 5/3}Se{sub 6}, La{sub 2}CuErTe{sub 5}, and Ce{sub 2}CuTmTe{sub 5}, have been prepared by direct reaction of the elements in molten NaBr at 900 Degree-Sign C. Each compound forms a new structure-type. The Ce{sub 2}AgYb{sub 5/3}Se{sub 6} structure consists of {infinity}{sup 2}{l_brace} [AgYb{sub 5/6}Se{sub 6}]{sup 6-}{r_brace} layers intercalated by Ce{sup 3+} cations. These layers are composed of {infinity}{sup 1}{l_brace} [Yb{sub 5/3}Se{sub 6}]{sup 7-}{r_brace} quadruplet ribbons of [YbSe{sub 6}]{sup 9-} octahedra and infinite {infinity}{sup 1}{l_brace} [AgSe{sub 6}]{sup 11-}{r_brace} double chains of [AgSe{sub 5}]{sup 9-}. The La{sub 2}CuErTe{sub 5} structure is made of one-dimensional {infinity}{sup 1}{l_brace} [CuErTe{sub 5}]{sup 6-}{r_brace} ribbons separated by La{sup 3+} cations. These ribbons are formed by cis-edge sharing {infinity}{sup 1}{l_brace} [CuTe{sub 2}]{sup 3-}{r_brace} tetrahedral chains and trans-edge sharing {infinity}{sup 1}{l_brace} [ErTe{sub 4}]{sup 5-}{r_brace} chains. While La{sub 2}CuErTe{sub 5} crystallizes in the orthorhombic space group Pnma, Ce{sub 2}CuTmTe{sub 5} crystallizes in the monoclinic space group C2/m. The latter crystal structure is assembled from {infinity}{sup 2}{l_brace} [CuTmTe{sub 5}]{sup 6-}{r_brace} layers intercalated by Ce{sup 3+} cations. These layers consist of single {infinity}{sup 1}{l_brace} [TmTe{sub 4}]{sup 5-}{r_brace} chains connected to each other through dimers or pseudo-double chains. - Graphical abstract: [CuTe{sub 4}]{sup 7-} tetrahedra sharing cis-edges to yield chains in the La{sub 2}CuErTe{sub 5}. Highlights: Black-Right-Pointing-Pointer New ordered interlanthanide tellurides. Black-Right-Pointing-Pointer New quaternary chalcogenides. Black-Right-Pointing-Pointer Low-dimensional lanthanide chalcogenide substructures. Black-Right-Pointing-Pointer Flux synthesis of new chalcogenides.

  20. RTGs Using PbTe/TAGSThermoelectric Elements for Mars Environmentatl Survey (MESUR) Mission

    SciTech Connect

    Schock, Alfred

    1992-07-01

    The paper describes the results of studies on an RTG option for powering the global network of unmanned landers for NASA's Mars Environmental Survey (MESUR) mission. RTGs are essentially unaffected by diurnal and seasonal variations, Martian sandstorms, and landing site latitudes, and their waste heat can stabilize the temperatures of the landers and their payload. The RTG designs described in this paper are based on PbTe/TAGS Thermoelectric elements, in contrast to the SiGe-based RTGs the author described in previous publications. The RTGs described here differ not only in the choice of thermoelectric materials but also in the use of much lower operating temperatures, conductive rather than radiative heat transfer, an inert cover gas instead of vacuum in the RGG's converter, and fibrous instead of multifoil thermal insulation. As in a previous Teledyne design, the Fairchild designs described in this paper employ flight-proven General Purpose Heat Source modules and Close-Pack Arrays of thermoelectric converter modules. Illustrative point designs of RTGs producing 41 and 51 watts(e) at 28 volts are presented. The presented performance parameters were derived by detailed thermal, thermoelectric, and electrical analyses (including radiator geometry optimization) described in the paper. The Fairchild study resulted in modifications of the Teledyne design to permit scale-up to higher power levels, and to ensure adequate fuel clad ductility at launch temperatures and adequate thermal conductance from the thermoelectric cold ends to the RTG housing. There are three duplicate copies. One copy is in the FSC-ESD files.

  1. Search for physics beyond the standard model in dilepton mass spectra in proton-proton collisions at ? = 8 TeV

    SciTech Connect

    Khachatryan, Vardan

    2015-04-07

    Dimuon and dielectron mass spectra, obtained from data resulting from proton-proton collisions at 8 TeV and recorded by the CMS experiment, are used to search for both narrow resonances and broad deviations from standard model predictions. The data correspond to an integrated luminosity of 20.6 (19.7) fb? for the dimuon (dielectron) channel. No evidence for non-standard-model physics is observed and 95% confidence level limits are set on parameters from a number of new physics models. The narrow resonance analyses exclude a Sequential Standard Model Z'SSM resonance lighter than 2.90 TeV, a superstring-inspired Z'? lighter than 2.57 TeV and Randall-Sundrum Kaluza-Klein gravitons with masses below 2.73, 2.35, and 1.27 TeV for couplings of 0.10, 0.05, and 0.01, respectively. A notable feature is that the limits have been calculated in a model-independent way to enable straightforward reinterpretation in any model predicting a resonance structure. The observed events are also interpreted within the framework of two non-resonant analyses: one based on a large extra dimensions model and one based on a quark and lepton compositeness model with a left-left isoscalar contact interaction. Lower limits are established on MS, the scale characterizing the onset of quantum gravity, which range from 4.9 to 3.3 TeV, where the number of additional spatial dimensions varies from 3 to 7. Similarly, lower limits on ?, the energy scale parameter for the contact interaction, are found to be 12.0 (15.2) TeV for destructive (constructive) interference in the dimuon channel and 13.5 (18.3) TeV in the dielectron channel.

  2. Search for physics beyond the standard model in dilepton mass spectra in proton-proton collisions at √s = 8 TeV

    SciTech Connect

    Khachatryan, V.; Sirunyan, A. M.; Tumasyan, A.; Adam, W.; Bergauer, T.; Dragicevic, M.; Erö, J.; Fabjan, C.; Friedl, M.; Frühwirth, R.; Ghete, V. M.; Hartl, C.; Hörmann, N.; Hrubec, J.; Jeitler, M.; Kiesenhofer, W.; Knünz, V.; Krammer, M.; Krätschmer, I.; Liko, D.; Mikulec, I.; Rabady, D.; Rahbaran, B.; Rohringer, H.; Schöfbeck, R.; Strauss, J.; Taurok, A.; Treberer-Treberspurg, W.; Waltenberger, W.; Wulz, C. -E.; Mossolov, V.; Shumeiko, N.; Suarez Gonzalez, J.; Alderweireldt, S.; Bansal, M.; Bansal, S.; Cornelis, T.; De Wolf, E. A.; Janssen, X.; Knutsson, A.; Luyckx, S.; Ochesanu, S.; Rougny, R.; Van De Klundert, M.; Van Haevermaet, H.; Van Mechelen, P.; Van Remortel, N.; Van Spilbeeck, A.; Blekman, F.; Blyweert, S.; D’Hondt, J.; Daci, N.; Heracleous, N.; Keaveney, J.; Lowette, S.; Maes, M.; Olbrechts, A.; Python, Q.; Strom, D.; Tavernier, S.; Van Doninck, W.; Van Mulders, P.; Van Onsem, G. P.; Villella, I.; Caillol, C.; Clerbaux, B.; De Lentdecker, G.; Dobur, D.; Favart, L.; Gay, A. P. R.; Grebenyuk, A.; Léonard, A.; Mohammadi, A.; Perniè, L.; Reis, T.; Seva, T.; Thomas, L.; Vander Velde, C.; Vanlaer, P.; Wang, J.; Zenoni, F.; Adler, V.; Beernaert, K.; Benucci, L.; Cimmino, A.; Costantini, S.; Crucy, S.; Dildick, S.; Fagot, A.; Garcia, G.; Mccartin, J.; Ocampo Rios, A. A.; Ryckbosch, D.; Salva Diblen, S.; Sigamani, M.; Strobbe, N.; Thyssen, F.; Tytgat, M.; Yazgan, E.; Zaganidis, N.; Basegmez, S.; Beluffi, C.; Bruno, G.; Castello, R.; Caudron, A.; Ceard, L.; Da Silveira, G. G.; Delaere, C.; du Pree, T.; Favart, D.; Forthomme, L.; Giammanco, A.; Hollar, J.; Jafari, A.; Jez, P.; Komm, M.; Lemaitre, V.; Nuttens, C.; Pagano, D.; Perrini, L.; Pin, A.; Piotrzkowski, K.; Popov, A.; Quertenmont, L.; Selvaggi, M.; Vidal Marono, M.; Vizan Garcia, J. M.; Beliy, N.; Caebergs, T.; Daubie, E.; Hammad, G. H.; Aldá Júnior, W. L.; Alves, G. A.; Brito, L.; Correa Martins Junior, M.; Dos Reis Martins, T.; Mora Herrera, C.; Pol, M. E.; Carvalho, W.; Chinellato, J.; Custódio, A.; Da Costa, E. M.; De Jesus Damiao, D.; De Oliveira Martins, C.; Fonseca De Souza, S.; Malbouisson, H.; Matos Figueiredo, D.; Mundim, L.; Nogima, H.; Prado Da Silva, W. L.; Santaolalla, J.; Santoro, A.; Sznajder, A.; Tonelli Manganote, E. J.; Vilela Pereira, A.; Bernardes, C. A.; Dogra, S.; Fernandez Perez Tomei, T. R.; Gregores, E. M.; Mercadante, P. G.; Novaes, S. F.; Padula, Sandra S.; Aleksandrov, A.; Genchev, V.; Iaydjiev, P.; Marinov, A.; Piperov, S.; Rodozov, M.; Stoykova, S.; Sultanov, G.; Vutova, M.; Dimitrov, A.; Glushkov, I.; Hadjiiska, R.; Kozhuharov, V.; Litov, L.; Pavlov, B.; Petkov, P.; Bian, J. G.; Chen, G. M.; Chen, H. S.; Chen, M.; Du, R.; Jiang, C. H.; Plestina, R.; Romeo, F.; Tao, J.; Wang, Z.; Asawatangtrakuldee, C.; Ban, Y.; Li, Q.; Liu, S.; Mao, Y.; Qian, S. J.; Wang, D.; Zou, W.; Avila, C.; Chaparro Sierra, L. F.; Florez, C.; Gomez, J. P.; Gomez Moreno, B.; Sanabria, J. C.; Godinovic, N.; Lelas, D.; Polic, D.; Puljak, I.; Antunovic, Z.; Kovac, M.; Brigljevic, V.; Kadija, K.; Luetic, J.; Mekterovic, D.; Sudic, L.; Attikis, A.; Mavromanolakis, G.; Mousa, J.; Nicolaou, C.; Ptochos, F.; Razis, P. A.; Bodlak, M.; Finger, M.; Finger, M.; Assran, Y.; Elgammal, S.; Mahmoud, M. A.; Radi, A.; Kadastik, M.; Murumaa, M.; Raidal, M.; Tiko, A.; Eerola, P.; Fedi, G.; Voutilainen, M.; Härkönen, J.; Karimäki, V.; Kinnunen, R.; Kortelainen, M. J.; Lampén, T.; Lassila-Perini, K.; Lehti, S.; Lindén, T.; Luukka, P.; Mäenpää, T.; Peltola, T.; Tuominen, E.; Tuominiemi, J.; Tuovinen, E.; Wendland, L.; Talvitie, J.; Tuuva, T.; Besancon, M.; Couderc, F.; Dejardin, M.; Denegri, D.; Fabbro, B.; Faure, J. L.; Favaro, C.; Ferri, F.; Ganjour, S.; Givernaud, A.; Gras, P.; Hamel de Monchenault, G.; Jarry, P.; Locci, E.; Malcles, J.; Rander, J.; Rosowsky, A.; Titov, M.; Baffioni, S.; Beaudette, F.; Busson, P.; Charlot, C.; Dahms, T.; Dalchenko, M.; Dobrzynski, L.; Filipovic, N.; Florent, A.; Granier de Cassagnac, R.; Mastrolorenzo, L.; Miné, P.; Mironov, C.; Naranjo, I. N.; Nguyen, M.; Ochando, C.; Paganini, P.; Regnard, S.; Salerno, R.; Sauvan, J. B.; Sirois, Y.; Veelken, C.; Yilmaz, Y.; Zabi, A.; Agram, J. -L.; Andrea, J.; Aubin, A.; Bloch, D.; Brom, J. -M.; Chabert, E. C.; Collard, C.; Conte, E.; Fontaine, J. -C.; Gelé, D.; Goerlach, U.; Goetzmann, C.; Le Bihan, A. -C.; Van Hove, P.; Gadrat, S.; Beauceron, S.; Beaupere, N.; Boudoul, G.; Bouvier, E.; Brochet, S.; Carrillo Montoya, C. A.; Chasserat, J.; Chierici, R.; Contardo, D.; Depasse, P.; El Mamouni, H.; Fan, J.; Fay, J.; Gascon, S.; Gouzevitch, M.; Ille, B.; Kurca, T.; Lethuillier, M.; Mirabito, L.; Perries, S.; Ruiz Alvarez, J. D.; Sabes, D.; Sgandurra, L.; Sordini, V.; Vander Donckt, M.; Verdier, P.; Viret, S.; Xiao, H.; Tsamalaidze, Z.; Autermann, C.; Beranek, S.; Bontenackels, M.; Edelhoff, M.; Feld, L.; Hindrichs, O.; Klein, K.; Ostapchuk, A.; Perieanu, A.; Raupach, F.; Sammet, J.; Schael, S.; Weber, H.; Wittmer, B.; Zhukov, V.; Ata, M.; Brodski, M.; Dietz-Laursonn, E.; Duchardt, D.; Erdmann, M.; Fischer, R.; Güth, A.; Hebbeker, T.; Heidemann, C.; Hoepfner, K.; Klingebiel, D.; Knutzen, S.; Kreuzer, P.; Merschmeyer, M.; Meyer, A.; Millet, P.; Olschewski, M.; Padeken, K.; Papacz, P.; Pook, T.; Reithler, H.; Schmitz, S. A.; Sonnenschein, L.; Teyssier, D.; Thüer, S.; Weber, M.; Cherepanov, V.; Erdogan, Y.; Flügge, G.; Geenen, H.; Geisler, M.; Haj Ahmad, W.; Heister, A.; Hoehle, F.; Kargoll, B.; Kress, T.; Kuessel, Y.; Künsken, A.; Lingemann, J.; Nowack, A.; Nugent, I. M.; Perchalla, L.; Pooth, O.; Stahl, A.; Asin, I.; Bartosik, N.; Behr, J.; Behrenhoff, W.; Behrens, U.; Bell, A. J.; Bergholz, M.; Bethani, A.; Borras, K.; Burgmeier, A.; Cakir, A.; Calligaris, L.; Campbell, A.; Choudhury, S.; Costanza, F.; Diez Pardos, C.; Dooling, S.; Dorland, T.; Eckerlin, G.; Eckstein, D.; Eichhorn, T.; Flucke, G.; Garay Garcia, J.; Geiser, A.; Gunnellini, P.; Hauk, J.; Hempel, M.; Horton, D.; Jung, H.; Kalogeropoulos, A.; Kasemann, M.; Katsas, P.; Kieseler, J.; Kleinwort, C.; Krücker, D.; Lange, W.; Leonard, J.; Lipka, K.; Lobanov, A.; Lohmann, W.; Lutz, B.; Mankel, R.; Marfin, I.; Melzer-Pellmann, I. -A.; Meyer, A. B.; Mittag, G.; Mnich, J.; Mussgiller, A.; Naumann-Emme, S.; Nayak, A.; Novgorodova, O.; Ntomari, E.; Perrey, H.; Pitzl, D.; Placakyte, R.; Raspereza, A.; Ribeiro Cipriano, P. M.; Roland, B.; Ron, E.; Sahin, M. Ö.; Salfeld-Nebgen, J.; Saxena, P.; Schmidt, R.; Schoerner-Sadenius, T.; Schröder, M.; Seitz, C.; Spannagel, S.; Vargas Trevino, A. D. R.; Walsh, R.; Wissing, C.; Aldaya Martin, M.; Blobel, V.; Centis Vignali, M.; Draeger, A. R.; Erfle, J.; Garutti, E.; Goebel, K.; Görner, M.; Haller, J.; Hoffmann, M.; Höing, R. S.; Kirschenmann, H.; Klanner, R.; Kogler, R.; Lange, J.; Lapsien, T.; Lenz, T.; Marchesini, I.; Ott, J.; Peiffer, T.; Pietsch, N.; Poehlsen, J.; Poehlsen, T.; Rathjens, D.; Sander, C.; Schettler, H.; Schleper, P.; Schlieckau, E.; Schmidt, A.; Seidel, M.; Sola, V.; Stadie, H.; Steinbrück, G.; Troendle, D.; Usai, E.; Vanelderen, L.; Vanhoefer, A.; Barth, C.; Baus, C.; Berger, J.; Böser, C.; Butz, E.; Chwalek, T.; De Boer, W.; Descroix, A.; Dierlamm, A.; Feindt, M.; Frensch, F.; Giffels, M.; Hartmann, F.; Hauth, T.; Husemann, U.; Katkov, I.; Kornmayer, A.; Kuznetsova, E.; Lobelle Pardo, P.; Mozer, M. U.; Müller, Th.; Nürnberg, A.; Quast, G.; Rabbertz, K.; Ratnikov, F.; Röcker, S.; Simonis, H. J.; Stober, F. M.; Ulrich, R.; Wagner-Kuhr, J.; Wayand, S.; Weiler, T.; Wolf, R.; Anagnostou, G.; Daskalakis, G.; Geralis, T.; Giakoumopoulou, V. A.; Kyriakis, A.; Loukas, D.; Markou, A.; Markou, C.; Psallidas, A.; Topsis-Giotis, I.; Agapitos, A.; Kesisoglou, S.; Panagiotou, A.; Saoulidou, N.; Stiliaris, E.; Aslanoglou, X.; Evangelou, I.; Flouris, G.; Foudas, C.; Kokkas, P.; Manthos, N.; Papadopoulos, I.; Paradas, E.; Bencze, G.; Hajdu, C.; Hidas, P.; Horvath, D.; Sikler, F.; Veszpremi, V.; Vesztergombi, G.; Zsigmond, A. J.; Beni, N.; Czellar, S.; Karancsi, J.; Molnar, J.; Palinkas, J.; Szillasi, Z.; Raics, P.; Trocsanyi, Z. L.; Ujvari, B.; Swain, S. K.; Beri, S. B.; Bhatnagar, V.; Gupta, R.; Bhawandeep, U.; Kalsi, A. K.; Kaur, M.; Kumar, R.; Mittal, M.; Nishu, N.; Singh, J. B.; Kumar, Ashok; Kumar, Arun; Ahuja, S.; Bhardwaj, A.; Choudhary, B. C.; Kumar, A.; Malhotra, S.; Naimuddin, M.; Ranjan, K.; Sharma, V.; Banerjee, S.; Bhattacharya, S.; Chatterjee, K.; Dutta, S.; Gomber, B.; Jain, Sa.; Jain, Sh.; Khurana, R.; Modak, A.; Mukherjee, S.; Roy, D.; Sarkar, S.; Sharan, M.; Abdulsalam, A.; Dutta, D.; Kailas, S.; Kumar, V.; Mohanty, A. K.; Pant, L. M.; Shukla, P.; Topkar, A.; Aziz, T.; Banerjee, S.; Bhowmik, S.; Chatterjee, R. M.; Dewanjee, R. K.; Dugad, S.; Ganguly, S.; Ghosh, S.; Guchait, M.; Gurtu, A.; Kole, G.; Kumar, S.; Maity, M.; Majumder, G.; Mazumdar, K.; Mohanty, G. B.; Parida, B.; Sudhakar, K.; Wickramage, N.; Bakhshiansohi, H.; Behnamian, H.; Etesami, S. M.; Fahim, A.; Goldouzian, R.; Khakzad, M.; Mohammadi Najafabadi, M.; Naseri, M.; Paktinat Mehdiabadi, S.; Rezaei Hosseinabadi, F.; Safarzadeh, B.; Zeinali, M.; Felcini, M.; Grunewald, M.; Abbrescia, M.; Barbone, L.; Calabria, C.; Chhibra, S. S.; Colaleo, A.; Creanza, D.; De Filippis, N.; De Palma, M.; Fiore, L.; Iaselli, G.; Maggi, G.; Maggi, M.; My, S.; Nuzzo, S.; Pompili, A.; Pugliese, G.; Radogna, R.; Selvaggi, G.; Sharma, A.; Silvestris, L.; Venditti, R.; Zito, G.; Abbiendi, G.; Benvenuti, A. C.; Bonacorsi, D.; Braibant-Giacomelli, S.; Brigliadori, L.; Campanini, R.; Capiluppi, P.; Castro, A.; Cavallo, F. R.; Codispoti, G.; Cuffiani, M.; Dallavalle, G. M.; Fabbri, F.; Fanfani, A.; Fasanella, D.; Giacomelli, P.; Grandi, C.; Guiducci, L.; Marcellini, S.; Masetti, G.; Montanari, A.; Navarria, F. L.; Perrotta, A.; Primavera, F.; Rossi, A. M.; Rovelli, T.; Siroli, G. P.; Tosi, N.; Travaglini, R.; Albergo, S.; Cappello, G.; Chiorboli, M.; Costa, S.; Giordano, F.; Potenza, R.; Tricomi, A.; Tuve, C.; Barbagli, G.; Ciulli, V.; Civinini, C.; D’Alessandro, R.; Focardi, E.; Gallo, E.; Gonzi, S.; Gori, V.; Lenzi, P.; Meschini, M.; Paoletti, S.; Sguazzoni, G.; Tropiano, A.; Benussi, L.; Bianco, S.; Fabbri, F.; Piccolo, D.; Ferretti, R.; Ferro, F.; Lo Vetere, M.; Robutti, E.; Tosi, S.; Dinardo, M. E.; Fiorendi, S.; Gennai, S.; Gerosa, R.; Ghezzi, A.; Govoni, P.; Lucchini, M. T.; Malvezzi, S.; Manzoni, R. A.; Martelli, A.; Marzocchi, B.; Menasce, D.; Moroni, L.; Paganoni, M.; Pedrini, D.; Ragazzi, S.; Redaelli, N.; Tabarelli de Fatis, T.; Buontempo, S.; Cavallo, N.; Di Guida, S.; Fabozzi, F.; Iorio, A. O. M.; Lista, L.; Meola, S.; Merola, M.; Paolucci, P.; Azzi, P.; Bacchetta, N.; Bisello, D.; Branca, A.; Carlin, R.; Checchia, P.; Dall’Osso, M.; Dorigo, T.; Dosselli, U.; Galanti, M.; Gasparini, F.; Gasparini, U.; Giubilato, P.; Gozzelino, A.; Kanishchev, K.; Lacaprara, S.; Margoni, M.; Meneguzzo, A. T.; Pazzini, J.; Pozzobon, N.; Ronchese, P.; Simonetto, F.; Torassa, E.; Tosi, M.; Zotto, P.; Zucchetta, A.; Zumerle, G.; Gabusi, M.; Ratti, S. P.; Re, V.; Riccardi, C.; Salvini, P.; Vitulo, P.; Biasini, M.; Bilei, G. M.; Ciangottini, D.; Fanò, L.; Lariccia, P.; Mantovani, G.; Menichelli, M.; Saha, A.; Santocchia, A.; Spiezia, A.; Androsov, K.; Azzurri, P.; Bagliesi, G.; Bernardini, J.; Boccali, T.; Broccolo, G.; Castaldi, R.; Ciocci, M. A.; Dell’Orso, R.; Donato, S.; Fiori, F.; Foà, L.; Giassi, A.; Grippo, M. T.; Ligabue, F.; Lomtadze, T.; Martini, L.; Messineo, A.; Moon, C. S.; Palla, F.; Rizzi, A.; Savoy-Navarro, A.; Serban, A. T.; Spagnolo, P.; Squillacioti, P.; Tenchini, R.; Tonelli, G.; Venturi, A.; Verdini, P. G.; Vernieri, C.; Barone, L.; Cavallari, F.; D’imperio, G.; Del Re, D.; Diemoz, M.; Grassi, M.; Jorda, C.; Longo, E.; Margaroli, F.; Meridiani, P.; Micheli, F.; Nourbakhsh, S.; Organtini, G.; Paramatti, R.; Rahatlou, S.; Rovelli, C.; Santanastasio, F.; Soffi, L.; Traczyk, P.; Amapane, N.; Arcidiacono, R.; Argiro, S.; Arneodo, M.; Bellan, R.; Biino, C.; Cartiglia, N.; Casasso, S.; Costa, M.; Degano, A.; Demaria, N.; Finco, L.; Mariotti, C.; Maselli, S.; Migliore, E.; Monaco, V.; Musich, M.; Obertino, M. M.; Ortona, G.; Pacher, L.; Pastrone, N.; Pelliccioni, M.; Pinna Angioni, G. L.; Potenza, A.; Romero, A.; Ruspa, M.; Sacchi, R.; Solano, A.; Staiano, A.; Tamponi, U.; Belforte, S.; Candelise, V.; Casarsa, M.; Cossutti, F.; Della Ricca, G.; Gobbo, B.; La Licata, C.; Marone, M.; Schizzi, A.; Umer, T.; Zanetti, A.; Chang, S.; Kropivnitskaya, A.; Nam, S. K.; Kim, D. H.; Kim, G. N.; Kim, M. S.; Kong, D. J.; Lee, S.; Oh, Y. D.; Park, H.; Sakharov, A.; Son, D. C.; Kim, T. J.; Kim, J. Y.; Song, S.; Choi, S.; Gyun, D.; Hong, B.; Jo, M.; Kim, H.; Kim, Y.; Lee, B.; Lee, K. S.; Park, S. K.; Roh, Y.; Yoo, H. D.; Choi, M.; Kim, J. H.; Park, I. C.; Ryu, G.; Ryu, M. S.; Choi, Y.; Choi, Y. K.; Goh, J.; Kim, D.; Kwon, E.; Lee, J.; Seo, H.; Yu, I.; Juodagalvis, A.; Komaragiri, J. R.; Ali, M. A. B. Md; Castilla-Valdez, H.; De La Cruz-Burelo, E.; Heredia-de La Cruz, I.; Hernandez-Almada, A.; Lopez-Fernandez, R.; Sanchez-Hernandez, A.; Carrillo Moreno, S.; Vazquez Valencia, F.; Pedraza, I.; Salazar Ibarguen, H. A.; Casimiro Linares, E.; Morelos Pineda, A.; Krofcheck, D.; Butler, P. H.; Reucroft, S.; Ahmad, A.; Ahmad, M.; Hassan, Q.; Hoorani, H. R.; Khalid, S.; Khan, W. A.; Khurshid, T.; Shah, M. A.; Shoaib, M.; Bialkowska, H.; Bluj, M.; Boimska, B.; Frueboes, T.; Górski, M.; Kazana, M.; Nawrocki, K.; Romanowska-Rybinska, K.; Szleper, M.; Zalewski, P.; Brona, G.; Bunkowski, K.; Cwiok, M.; Dominik, W.; Doroba, K.; Kalinowski, A.; Konecki, M.; Krolikowski, J.; Misiura, M.; Olszewski, M.; Wolszczak, W.; Bargassa, P.; Beirão Da Cruz E Silva, C.; Faccioli, P.; Ferreira Parracho, P. G.; Gallinaro, M.; Lloret Iglesias, L.; Nguyen, F.; Rodrigues Antunes, J.; Seixas, J.; Varela, J.; Vischia, P.; Golutvin, I.; Gorbunov, I.; Kamenev, A.; Karjavin, V.; Konoplyanikov, V.; Kozlov, G.; Lanev, A.; Malakhov, A.; Matveev, V.; Moisenz, P.; Palichik, V.; Perelygin, V.; Savina, M.; Shmatov, S.; Shulha, S.; Skatchkov, N.; Smirnov, V.; Zarubin, A.; Golovtsov, V.; Ivanov, Y.; Kim, V.; Levchenko, P.; Murzin, V.; Oreshkin, V.; Smirnov, I.; Sulimov, V.; Uvarov, L.; Vavilov, S.; Vorobyev, A.; Vorobyev, An.; Andreev, Yu.; Dermenev, A.; Gninenko, S.; Golubev, N.; Kirsanov, M.; Krasnikov, N.; Pashenkov, A.; Tlisov, D.; Toropin, A.; Epshteyn, V.; Gavrilov, V.; Lychkovskaya, N.; Popov, V.; Safronov, G.; Semenov, S.; Spiridonov, A.; Stolin, V.; Vlasov, E.; Zhokin, A.; Andreev, V.; Azarkin, M.; Dremin, I.; Kirakosyan, M.; Leonidov, A.; Mesyats, G.; Rusakov, S. V.; Vinogradov, A.; Belyaev, A.; Boos, E.; Bunichev, V.; Dubinin, M.; Dudko, L.; Gribushin, A.; Klyukhin, V.; Kodolova, O.; Lokhtin, I.; Obraztsov, S.; Perfilov, M.; Savrin, V.; Snigirev, A.; Azhgirey, I.; Bayshev, I.; Bitioukov, S.; Kachanov, V.; Kalinin, A.; Konstantinov, D.; Krychkine, V.; Petrov, V.; Ryutin, R.; Sobol, A.; Tourtchanovitch, L.; Troshin, S.; Tyurin, N.; Uzunian, A.; Volkov, A.; Adzic, P.; Ekmedzic, M.; Milosevic, J.; Rekovic, V.; Alcaraz Maestre, J.; Battilana, C.; Calvo, E.; Cerrada, M.; Chamizo Llatas, M.; Colino, N.; De La Cruz, B.; Delgado Peris, A.; Domínguez Vázquez, D.; Escalante Del Valle, A.; Fernandez Bedoya, C.; Fernández Ramos, J. P.; Flix, J.; Fouz, M. C.; Garcia-Abia, P.; Gonzalez Lopez, O.; Goy Lopez, S.; Hernandez, J. M.; Josa, M. I.; Navarro De Martino, E.; Pérez-Calero Yzquierdo, A.; Puerta Pelayo, J.; Quintario Olmeda, A.; Redondo, I.; Romero, L.; Soares, M. S.; Albajar, C.; de Trocóniz, J. F.; Missiroli, M.; Moran, D.; Brun, H.; Cuevas, J.; Fernandez Menendez, J.; Folgueras, S.; Gonzalez Caballero, I.; Brochero Cifuentes, J. A.; Cabrillo, I. J.; Calderon, A.; Duarte Campderros, J.; Fernandez, M.; Gomez, G.; Graziano, A.; Lopez Virto, A.; Marco, J.; Marco, R.; Martinez Rivero, C.; Matorras, F.; Munoz Sanchez, F. J.; Piedra Gomez, J.; Rodrigo, T.; Rodríguez-Marrero, A. Y.; Ruiz-Jimeno, A.; Scodellaro, L.; Vila, I.; Vilar Cortabitarte, R.; Abbaneo, D.; Auffray, E.; Auzinger, G.; Bachtis, M.; Baillon, P.; Ball, A. H.; Barney, D.; Benaglia, A.; Bendavid, J.; Benhabib, L.; Benitez, J. F.; Bernet, C.; Bloch, P.; Bocci, A.; Bonato, A.; Bondu, O.; Botta, C.; Breuker, H.; Camporesi, T.; Cerminara, G.; Colafranceschi, S.; D’Alfonso, M.; d’Enterria, D.; Dabrowski, A.; David, A.; De Guio, F.; De Roeck, A.; De Visscher, S.; Di Marco, E.; Dobson, M.; Dordevic, M.; Dorney, B.; Dupont-Sagorin, N.; Elliott-Peisert, A.; Eugster, J.; Franzoni, G.; Funk, W.; Gigi, D.; Gill, K.; Giordano, D.; Girone, M.; Glege, F.; Guida, R.; Gundacker, S.; Guthoff, M.; Hammer, J.; Hansen, M.; Harris, P.; Hegeman, J.; Innocente, V.; Janot, P.; Kousouris, K.; Krajczar, K.; Lecoq, P.; Lourenço, C.; Magini, N.; Malgeri, L.; Mannelli, M.; Marrouche, J.; Masetti, L.; Meijers, F.; Mersi, S.; Meschi, E.; Moortgat, F.; Morovic, S.; Mulders, M.; Musella, P.; Orsini, L.; Pape, L.; Perez, E.; Perrozzi, L.; Petrilli, A.; Petrucciani, G.; Pfeiffer, A.; Pierini, M.; Pimiä, M.; Piparo, D.; Plagge, M.; Racz, A.; Rolandi, G.; Rovere, M.; Sakulin, H.; Schäfer, C.; Schwick, C.; Sharma, A.; Siegrist, P.; Silva, P.; Simon, M.; Sphicas, P.; Spiga, D.; Steggemann, J.; Stieger, B.; Stoye, M.; Takahashi, Y.; Treille, D.; Tsirou, A.; Veres, G. I.; Wardle, N.; Wöhri, H. K.; Wollny, H.; Zeuner, W. D.; Bertl, W.; Deiters, K.; Erdmann, W.; Horisberger, R.; Ingram, Q.; Kaestli, H. C.; Kotlinski, D.; Langenegger, U.; Renker, D.; Rohe, T.; Bachmair, F.; Bäni, L.; Bianchini, L.; Buchmann, M. A.; Casal, B.; Chanon, N.; Dissertori, G.; Dittmar, M.; Donegà, M.; Dünser, M.; Eller, P.; Grab, C.; Hits, D.; Hoss, J.; Lustermann, W.; Mangano, B.; Marini, A. C.; Martinez Ruiz del Arbol, P.; Masciovecchio, M.; Meister, D.; Mohr, N.; Nägeli, C.; Nessi-Tedaldi, F.; Pandolfi, F.; Pauss, F.; Peruzzi, M.; Quittnat, M.; Rebane, L.; Rossini, M.; Starodumov, A.; Takahashi, M.; Theofilatos, K.; Wallny, R.; Weber, H. A.; Amsler, C.; Canelli, M. F.; Chiochia, V.; De Cosa, A.; Hinzmann, A.; Hreus, T.; Kilminster, B.; Lange, C.; Millan Mejias, B.; Ngadiuba, J.; Robmann, P.; Ronga, F. J.; Taroni, S.; Verzetti, M.; Yang, Y.; Cardaci, M.; Chen, K. H.; Ferro, C.; Kuo, C. M.; Lin, W.; Lu, Y. J.; Volpe, R.; Yu, S. S.; Chang, P.; Chang, Y. H.; Chang, Y. W.; Chao, Y.; Chen, K. F.; Chen, P. H.; Dietz, C.; Grundler, U.; Hou, W. -S.; Kao, K. Y.; Lei, Y. J.; Liu, Y. F.; Lu, R. -S.; Majumder, D.; Petrakou, E.; Tzeng, Y. M.; Wilken, R.; Asavapibhop, B.; Singh, G.; Srimanobhas, N.; Suwonjandee, N.; Adiguzel, A.; Bakirci, M. N.; Cerci, S.; Dozen, C.; Dumanoglu, I.; Eskut, E.; Girgis, S.; Gokbulut, G.; Gurpinar, E.; Hos, I.; Kangal, E. E.; Kayis Topaksu, A.; Onengut, G.; Ozdemir, K.; Ozturk, S.; Polatoz, A.; Sunar Cerci, D.; Tali, B.; Topakli, H.; Vergili, M.; Akin, I. V.; Bilin, B.; Bilmis, S.; Gamsizkan, H.; Karapinar, G.; Ocalan, K.; Sekmen, S.; Surat, U. E.; Yalvac, M.; Zeyrek, M.; Gülmez, E.; Isildak, B.; Kaya, M.; Kaya, O.; Cankocak, K.; Vardarlı, F. I.; Levchuk, L.; Sorokin, P.; Brooke, J. J.; Clement, E.; Cussans, D.; Flacher, H.; Goldstein, J.; Grimes, M.; Heath, G. P.; Heath, H. F.; Jacob, J.; Kreczko, L.; Lucas, C.; Meng, Z.; Newbold, D. M.; Paramesvaran, S.; Poll, A.; Senkin, S.; Smith, V. J.; Williams, T.; Bell, K. W.; Belyaev, A.; Brew, C.; Brown, R. M.; Cockerill, D. J. A.; Coughlan, J. A.; Harder, K.; Harper, S.; Olaiya, E.; Petyt, D.; Shepherd-Themistocleous, C. H.; Thea, A.; Tomalin, I. R.; Womersley, W. J.; Worm, S. D.; Baber, M.; Bainbridge, R.; Buchmuller, O.; Burton, D.; Colling, D.; Cripps, N.; Cutajar, M.; Dauncey, P.; Davies, G.; Della Negra, M.; Dunne, P.; Ferguson, W.; Fulcher, J.; Futyan, D.; Gilbert, A.; Hall, G.; Iles, G.; Jarvis, M.; Karapostoli, G.; Kenzie, M.; Lane, R.; Lucas, R.; Lyons, L.; Magnan, A. -M.; Malik, S.; Mathias, B.; Nash, J.; Nikitenko, A.; Pela, J.; Pesaresi, M.; Petridis, K.; Raymond, D. M.; Rogerson, S.; Rose, A.; Seez, C.; Sharp, P.; Tapper, A.; Vazquez Acosta, M.; Virdee, T.; Zenz, S. C.; Cole, J. E.; Hobson, P. R.; Khan, A.; Kyberd, P.; Leggat, D.; Leslie, D.; Martin, W.; Reid, I. D.; Symonds, P.; Teodorescu, L.; Turner, M.; Dittmann, J.; Hatakeyama, K.; Kasmi, A.; Liu, H.; Scarborough, T.; Charaf, O.; Cooper, S. I.; Henderson, C.; Rumerio, P.; Avetisyan, A.; Bose, T.; Fantasia, C.; Lawson, P.; Richardson, C.; Rohlf, J.; John, J. St.; Sulak, L.; Alimena, J.; Berry, E.; Bhattacharya, S.; Christopher, G.; Cutts, D.; Demiragli, Z.; Dhingra, N.; Ferapontov, A.; Garabedian, A.; Heintz, U.; Kukartsev, G.; Laird, E.; Landsberg, G.; Luk, M.; Narain, M.; Segala, M.; Sinthuprasith, T.; Speer, T.; Swanson, J.; Breedon, R.; Breto, G.; Calderon De La Barca Sanchez, M.; Chauhan, S.; Chertok, M.; Conway, J.; Conway, R.; Cox, P. T.; Erbacher, R.; Gardner, M.; Ko, W.; Lander, R.; Miceli, T.; Mulhearn, M.; Pellett, D.; Pilot, J.; Ricci-Tam, F.; Searle, M.; Shalhout, S.; Smith, J.; Squires, M.; Stolp, D.; Tripathi, M.; Wilbur, S.; Yohay, R.; Cousins, R.; Everaerts, P.; Farrell, C.; Hauser, J.; Ignatenko, M.; Rakness, G.; Takasugi, E.; Valuev, V.; Weber, M.; Burt, K.; Clare, R.; Ellison, J.; Gary, J. W.; Hanson, G.; Heilman, J.; Ivova Rikova, M.; Jandir, P.; Kennedy, E.; Lacroix, F.; Long, O. R.; Luthra, A.; Malberti, M.; Nguyen, H.; Olmedo Negrete, M.; Shrinivas, A.; Sumowidagdo, S.; Wimpenny, S.; Andrews, W.; Branson, J. G.; Cerati, G. B.; Cittolin, S.; D’Agnolo, R. T.; Evans, D.; Holzner, A.; Kelley, R.; Klein, D.; Lebourgeois, M.; Letts, J.; Macneill, I.; Olivito, D.; Padhi, S.; Palmer, C.; Pieri, M.; Sani, M.; Sharma, V.; Simon, S.; Sudano, E.; Tadel, M.; Tu, Y.; Vartak, A.; Welke, C.; Würthwein, F.; Yagil, A.; Barge, D.; Bradmiller-Feld, J.; Campagnari, C.; Danielson, T.; Dishaw, A.; Dutta, V.; Flowers, K.; Franco Sevilla, M.; Geffert, P.; George, C.; Golf, F.; Gouskos, L.; Incandela, J.; Justus, C.; Mccoll, N.; Richman, J.; Stuart, D.; To, W.; West, C.; Yoo, J.; Apresyan, A.; Bornheim, A.; Bunn, J.; Chen, Y.; Duarte, J.; Mott, A.; Newman, H. B.; Pena, C.; Rogan, C.; Spiropulu, M.; Timciuc, V.; Vlimant, J. R.; Wilkinson, R.; Xie, S.; Zhu, R. Y.; Azzolini, V.; Calamba, A.; Carlson, B.; Ferguson, T.; Iiyama, Y.; Paulini, M.; Russ, J.; Vogel, H.; Vorobiev, I.; Cumalat, J. P.; Ford, W. T.; Gaz, A.; Luiggi Lopez, E.; Nauenberg, U.; Smith, J. G.; Stenson, K.; Ulmer, K. A.; Wagner, S. R.; Alexander, J.; Chatterjee, A.; Chu, J.; Dittmer, S.; Eggert, N.; Mirman, N.; Nicolas Kaufman, G.; Patterson, J. R.; Ryd, A.; Salvati, E.; Skinnari, L.; Sun, W.; Teo, W. D.; Thom, J.; Thompson, J.; Tucker, J.; Weng, Y.; Winstrom, L.; Wittich, P.; Winn, D.; Abdullin, S.; Albrow, M.; Anderson, J.; Apollinari, G.; Bauerdick, L. A. T.; Beretvas, A.; Berryhill, J.; Bhat, P. C.; Bolla, G.; Burkett, K.; Butler, J. N.; Cheung, H. W. K.; Chlebana, F.; Cihangir, S.; Elvira, V. D.; Fisk, I.; Freeman, J.; Gao, Y.; Gottschalk, E.; Gray, L.; Green, D.; Grünendahl, S.; Gutsche, O.; Hanlon, J.; Hare, D.; Harris, R. M.; Hirschauer, J.; Hooberman, B.; Jindariani, S.; Johnson, M.; Joshi, U.; Kaadze, K.; Klima, B.; Kreis, B.; Kwan, S.; Linacre, J.; Lincoln, D.; Lipton, R.; Liu, T.; Lykken, J.; Maeshima, K.; Marraffino, J. M.; Martinez Outschoorn, V. I.; Maruyama, S.; Mason, D.; McBride, P.; Merkel, P.; Mishra, K.; Mrenna, S.; Musienko, Y.; Nahn, S.; Newman-Holmes, C.; O’Dell, V.; Prokofyev, O.; Sexton-Kennedy, E.; Sharma, S.; Soha, A.; Spalding, W. J.; Spiegel, L.; Taylor, L.; Tkaczyk, S.; Tran, N. V.; Uplegger, L.; Vaandering, E. W.; Vidal, R.; Whitbeck, A.; Whitmore, J.; Yang, F.; Acosta, D.; Avery, P.; Bortignon, P.; Bourilkov, D.; Carver, M.; Cheng, T.; Curry, D.; Das, S.; De Gruttola, M.; Di Giovanni, G. P.; Field, R. D.; Fisher, M.; Furic, I. K.; Hugon, J.; Konigsberg, J.; Korytov, A.; Kypreos, T.; Low, J. F.; Matchev, K.; Milenovic, P.; Mitselmakher, G.; Muniz, L.; Rinkevicius, A.; Shchutska, L.; Snowball, M.; Sperka, D.; Yelton, J.; Zakaria, M.; Hewamanage, S.; Linn, S.; Markowitz, P.; Martinez, G.; Rodriguez, J. L.; Adams, T.; Askew, A.; Bochenek, J.; Diamond, B.; Haas, J.; Hagopian, S.; Hagopian, V.; Johnson, K. F.; Prosper, H.; Veeraraghavan, V.; Weinberg, M.; Baarmand, M. M.; Hohlmann, M.; Kalakhety, H.; Yumiceva, F.; Adams, M. R.; Apanasevich, L.; Bazterra, V. E.; Berry, D.; Betts, R. R.; Bucinskaite, I.; Cavanaugh, R.; Evdokimov, O.; Gauthier, L.; Gerber, C. E.; Hofman, D. J.; Khalatyan, S.; Kurt, P.; Moon, D. H.; O’Brien, C.; Silkworth, C.; Turner, P.; Varelas, N.; Albayrak, E. A.; Bilki, B.; Clarida, W.; Dilsiz, K.; Duru, F.; Haytmyradov, M.; Merlo, J. -P.; Mermerkaya, H.; Mestvirishvili, A.; Moeller, A.; Nachtman, J.; Ogul, H.; Onel, Y.; Ozok, F.; Penzo, A.; Rahmat, R.; Sen, S.; Tan, P.; Tiras, E.; Wetzel, J.; Yetkin, T.; Yi, K.; Barnett, B. A.; Blumenfeld, B.; Bolognesi, S.; Fehling, D.; Gritsan, A. V.; Maksimovic, P.; Martin, C.; Swartz, M.; Baringer, P.; Bean, A.; Benelli, G.; Bruner, C.; Kenny, R. P.; Malek, M.; Murray, M.; Noonan, D.; Sanders, S.; Sekaric, J.; Stringer, R.; Wang, Q.; Wood, J. S.; Chakaberia, I.; Ivanov, A.; Khalil, S.; Makouski, M.; Maravin, Y.; Saini, L. K.; Shrestha, S.; Skhirtladze, N.; Svintradze, I.; Gronberg, J.; Lange, D.; Rebassoo, F.; Wright, D.; Baden, A.; Belloni, A.; Calvert, B.; Eno, S. C.; Gomez, J. A.; Hadley, N. J.; Kellogg, R. G.; Kolberg, T.; Lu, Y.; Marionneau, M.; Mignerey, A. C.; Pedro, K.; Skuja, A.; Tonjes, M. B.; Tonwar, S. C.; Apyan, A.; Barbieri, R.; Bauer, G.; Busza, W.; Cali, I. A.; Chan, M.; Di Matteo, L.; Gomez Ceballos, G.; Goncharov, M.; Gulhan, D.; Klute, M.; Lai, Y. S.; Lee, Y. -J.; Levin, A.; Luckey, P. D.; Ma, T.; Paus, C.; Ralph, D.; Roland, C.; Roland, G.; Stephans, G. S. F.; Stöckli, F.; Sumorok, K.; Velicanu, D.; Veverka, J.; Wyslouch, B.; Yang, M.; Zanetti, M.; Zhukova, V.; Dahmes, B.; Gude, A.; Kao, S. C.; Klapoetke, K.; Kubota, Y.; Mans, J.; Pastika, N.; Rusack, R.; Singovsky, A.; Tambe, N.; Turkewitz, J.; Acosta, J. G.; Oliveros, S.; Avdeeva, E.; Bloom, K.; Bose, S.; Claes, D. R.; Dominguez, A.; Gonzalez Suarez, R.; Keller, J.; Knowlton, D.; Kravchenko, I.; Lazo-Flores, J.; Malik, S.; Meier, F.; Snow, G. R.; Zvada, M.; Dolen, J.; Godshalk, A.; Iashvili, I.; Kharchilava, A.; Kumar, A.; Rappoccio, S.; Alverson, G.; Barberis, E.; Baumgartel, D.; Chasco, M.; Haley, J.; Massironi, A.; Morse, D. M.; Nash, D.; Orimoto, T.; Trocino, D.; Wang, R. -J.; Wood, D.; Zhang, J.; Hahn, K. A.; Kubik, A.; Mucia, N.; Odell, N.; Pollack, B.; Pozdnyakov, A.; Schmitt, M.; Stoynev, S.; Sung, K.; Velasco, M.; Won, S.; Brinkerhoff, A.; Chan, K. M.; Drozdetskiy, A.; Hildreth, M.; Jessop, C.; Karmgard, D. J.; Kellams, N.; Lannon, K.; Luo, W.; Lynch, S.; Marinelli, N.; Pearson, T.; Planer, M.; Ruchti, R.; Valls, N.; Wayne, M.; Wolf, M.; Woodard, A.; Antonelli, L.; Brinson, J.; Bylsma, B.; Durkin, L. S.; Flowers, S.; Hart, A.; Hill, C.; Hughes, R.; Kotov, K.; Ling, T. Y.; Puigh, D.; Rodenburg, M.; Smith, G.; Winer, B. L.; Wolfe, H.; Wulsin, H. W.; Driga, O.; Elmer, P.; Hebda, P.; Hunt, A.; Koay, S. A.; Lujan, P.; Marlow, D.; Medvedeva, T.; Mooney, M.; Olsen, J.; Piroué, P.; Quan, X.; Saka, H.; Stickland, D.; Tully, C.; Werner, J. S.; Zuranski, A.; Brownson, E.; Mendez, H.; Ramirez Vargas, J. E.; Barnes, V. E.; Benedetti, D.; Bortoletto, D.; De Mattia, M.; Gutay, L.; Hu, Z.; Jha, M. K.; Jones, M.; Jung, K.; Kress, M.; Leonardo, N.; Lopes Pegna, D.; Maroussov, V.; Miller, D. H.; Neumeister, N.; Radburn-Smith, B. C.; Shi, X.; Shipsey, I.; Silvers, D.; Svyatkovskiy, A.; Wang, F.; Xie, W.; Xu, L.; Zablocki, J.; Zheng, Y.; Parashar, N.; Stupak, J.; Adair, A.; Akgun, B.; Ecklund, K. M.; Geurts, F. J. M.; Li, W.; Michlin, B.; Padley, B. P.; Redjimi, R.; Roberts, J.; Zabel, J.; Betchart, B.; Bodek, A.; Covarelli, R.; de Barbaro, P.; Demina, R.; Eshaq, Y.; Ferbel, T.; Garcia-Bellido, A.; Goldenzweig, P.; Han, J.; Harel, A.; Khukhunaishvili, A.; Petrillo, G.; Vishnevskiy, D.; Ciesielski, R.; Demortier, L.; Goulianos, K.; Lungu, G.; Mesropian, C.; Arora, S.; Barker, A.; Chou, J. P.; Contreras-Campana, C.; Contreras-Campana, E.; Duggan, D.; Ferencek, D.; Gershtein, Y.; Gray, R.; Halkiadakis, E.; Hidas, D.; Kaplan, S.; Lath, A.; Panwalkar, S.; Park, M.; Patel, R.; Salur, S.; Schnetzer, S.; Somalwar, S.; Stone, R.; Thomas, S.; Thomassen, P.; Walker, M.; Rose, K.; Spanier, S.; York, A.; Bouhali, O.; Castaneda Hernandez, A.; Eusebi, R.; Flanagan, W.; Gilmore, J.; Kamon, T.; Khotilovich, V.; Krutelyov, V.; Montalvo, R.; Osipenkov, I.; Pakhotin, Y.; Perloff, A.; Roe, J.; Rose, A.; Safonov, A.; Sakuma, T.; Suarez, I.; Tatarinov, A.; Akchurin, N.; Cowden, C.; Damgov, J.; Dragoiu, C.; Dudero, P. R.; Faulkner, J.; Kovitanggoon, K.; Kunori, S.; Lee, S. W.; Libeiro, T.; Volobouev, I.; Appelt, E.; Delannoy, A. G.; Greene, S.; Gurrola, A.; Johns, W.; Maguire, C.; Mao, Y.; Melo, A.; Sharma, M.; Sheldon, P.; Snook, B.; Tuo, S.; Velkovska, J.; Arenton, M. W.; Boutle, S.; Cox, B.; Francis, B.; Goodell, J.; Hirosky, R.; Ledovskoy, A.; Li, H.; Lin, C.; Neu, C.; Wood, J.; Clarke, C.; Harr, R.; Karchin, P. E.; Kottachchi Kankanamge Don, C.; Lamichhane, P.; Sturdy, J.; Belknap, D. A.; Carlsmith, D.; Cepeda, M.; Dasu, S.; Dodd, L.; Duric, S.; Friis, E.; Hall-Wilton, R.; Herndon, M.; Hervé, A.; Klabbers, P.; Lanaro, A.; Lazaridis, C.; Levine, A.; Loveless, R.; Mohapatra, A.; Ojalvo, I.; Perry, T.; Pierro, G. A.; Polese, G.; Ross, I.; Sarangi, T.; Savin, A.; Smith, W. H.; Taylor, D.; Verwilligen, P.; Vuosalo, C.; Woods, N.

    2015-04-07

    Dimuon and dielectron mass spectra, obtained from data resulting from proton-proton collisions at 8 TeV and recorded by the CMS experiment, are used to search for both narrow resonances and broad deviations from standard model predictions. The data correspond to an integrated luminosity of 20.6 (19.7) fb–1 for the dimuon (dielectron) channel. No evidence for non-standard-model physics is observed and 95% confidence level limits are set on parameters from a number of new physics models. The narrow resonance analyses exclude a Sequential Standard Model Z SSM ' resonance lighter than 2.90 TeV, a superstring-inspired Z ψ ' lighter than 2.57 TeV, and Randall-Sundrum Kaluza-Klein gravitons with masses below 2.73, 2.35, and 1.27 TeV for couplings of 0.10, 0.05, and 0.01, respectively. A notable feature is that the limits have been calculated in a model-independent way to enable straightforward reinterpretation in any model predicting a resonance structure. The observed events are also interpreted within the framework of two non-resonant analyses: one based on a large extra dimensions model and one based on a quark and lepton compositeness model with a left-left isoscalar contact interaction. Lower limits are established on MS, the scale characterizing the onset of quantum gravity, which range from 4.9 to 3.3 TeV, where the number of additional spatial dimensions varies from 3 to 7. Thus lower limits on Λ, the energy scale parameter for the contact interaction, are found to be 12.0 (15.2) TeV for destructive (constructive) interference in the dimuon channel and 13.5 (18.3) TeV in the dielectron channel.

  3. Search for physics beyond the standard model in dilepton mass spectra in proton-proton collisions at √s = 8 TeV

    DOE PAGES [OSTI]

    Khachatryan, V.; Sirunyan, A. M.; Tumasyan, A.; Adam, W.; Bergauer, T.; Dragicevic, M.; Erö, J.; Fabjan, C.; Friedl, M.; Frühwirth, R.; et al

    2015-04-07

    Dimuon and dielectron mass spectra, obtained from data resulting from proton-proton collisions at 8 TeV and recorded by the CMS experiment, are used to search for both narrow resonances and broad deviations from standard model predictions. The data correspond to an integrated luminosity of 20.6 (19.7) fb–1 for the dimuon (dielectron) channel. No evidence for non-standard-model physics is observed and 95% confidence level limits are set on parameters from a number of new physics models. The narrow resonance analyses exclude a Sequential Standard Model Z SSM ' resonance lighter than 2.90 TeV, a superstring-inspired Z ψ ' lighter than 2.57more » TeV, and Randall-Sundrum Kaluza-Klein gravitons with masses below 2.73, 2.35, and 1.27 TeV for couplings of 0.10, 0.05, and 0.01, respectively. A notable feature is that the limits have been calculated in a model-independent way to enable straightforward reinterpretation in any model predicting a resonance structure. The observed events are also interpreted within the framework of two non-resonant analyses: one based on a large extra dimensions model and one based on a quark and lepton compositeness model with a left-left isoscalar contact interaction. Lower limits are established on MS, the scale characterizing the onset of quantum gravity, which range from 4.9 to 3.3 TeV, where the number of additional spatial dimensions varies from 3 to 7. Thus lower limits on Λ, the energy scale parameter for the contact interaction, are found to be 12.0 (15.2) TeV for destructive (constructive) interference in the dimuon channel and 13.5 (18.3) TeV in the dielectron channel.« less

  4. Search for new phenomena with photon+jet events in proton-proton collisions at √s = 13 TeV with the ATLAS detector

    DOE PAGES [OSTI]

    Aad, G.; Abbott, B.; Abdallah, J.; Abdinov, O.; Abeloos, B.; Aben, R.; Abolins, M.; AbouZeid, O. S.; Abramowicz, H.; Abreu, H.; et al

    2016-03-08

    A search is performed for the production of high-mass resonances decaying into a photon and a jet in 3.2 fb-1 of proton-proton collisions at a centre-of-mass energy of √s =13 TeV collected by the ATLAS detector at the Large Hadron Collider. Selected events have an isolated photon and a jet, each with transverse momentum above 150 GeV. No significant deviation of the γ+jet invariant mass distribution from the background-only hypothesis is found. Limits are set at 95% confidence level on the cross sections of generic Gaussian-shaped signals and of a few benchmark phenomena beyond the Standard Model: excited quarks withmore » vector-like couplings to the Standard Model particles, and non-thermal quantum black holes in two models of extra spatial dimensions. The minimum excluded visible cross sections for Gaussian-shaped resonances with width-to-mass ratios of 2% decrease from about 6 fb for a mass of 1.5 TeV to about 0.8 fb for a mass of 5 TeV. The minimum excluded visible cross sections for Gaussian-shaped resonances with width-to-mass ratios of 15% decrease from about 50 fb for a mass of 1.5 TeV to about 1.0 fb for a mass of 5 TeV. As a result, excited quarks are excluded below masses of 4.4 TeV, and non-thermal quantum black holes are excluded below masses of 3.8 (6.2) TeV for Randall-Sundrum (Arkani-Hamed-Dimopoulous-Dvali) models with one (six) extra dimensions.« less

  5. Search for physics beyond the standard model in dilepton mass spectra in proton-proton collisions at ? = 8 TeV

    DOE PAGES [OSTI]

    Khachatryan, Vardan

    2015-04-07

    Dimuon and dielectron mass spectra, obtained from data resulting from proton-proton collisions at 8 TeV and recorded by the CMS experiment, are used to search for both narrow resonances and broad deviations from standard model predictions. The data correspond to an integrated luminosity of 20.6 (19.7) fb? for the dimuon (dielectron) channel. No evidence for non-standard-model physics is observed and 95% confidence level limits are set on parameters from a number of new physics models. The narrow resonance analyses exclude a Sequential Standard Model Z'SSM resonance lighter than 2.90 TeV, a superstring-inspired Z'? lighter than 2.57 TeV and Randall-SundrummoreKaluza-Klein gravitons with masses below 2.73, 2.35, and 1.27 TeV for couplings of 0.10, 0.05, and 0.01, respectively. A notable feature is that the limits have been calculated in a model-independent way to enable straightforward reinterpretation in any model predicting a resonance structure. The observed events are also interpreted within the framework of two non-resonant analyses: one based on a large extra dimensions model and one based on a quark and lepton compositeness model with a left-left isoscalar contact interaction. Lower limits are established on MS, the scale characterizing the onset of quantum gravity, which range from 4.9 to 3.3 TeV, where the number of additional spatial dimensions varies from 3 to 7. Similarly, lower limits on ?, the energy scale parameter for the contact interaction, are found to be 12.0 (15.2) TeV for destructive (constructive) interference in the dimuon channel and 13.5 (18.3) TeV in the dielectron channel.less

  6. Measurement of differential cross sections for the production of a pair of isolated photons in pp collisions at $$\\sqrt{s}=7\\,\\text {TeV} $$ s = 7 TeV

    SciTech Connect

    Chatrchyan, Serguei

    2014-11-12

    A measurement of differential cross sections for the production of a pair of isolated photons in protonproton collisions at $\\sqrt{s}=7\\,\\text {TeV} $ is presented. The data sample corresponds to an integrated luminosity of 5.0 $\\,\\text {fb}^{-1}$ collected with the CMS detector. A data-driven isolation template method is used to extract the prompt diphoton yield. The measured cross section for two isolated photons, with transverse energy above 40 and 25 $\\,\\text {GeV}$ respectively, in the pseudorapidity range $|\\eta |<2.5$ , $|\\eta |\

  7. The Present, Mid-Term, and Long-Term Supply Curves for Tellurium; and Updates in the Results from NREL's CdTe PV Module Manufacturing Cost Model (Presentation)

    SciTech Connect

    Woodhouse, M.; Goodrich, A.; Redlinger, M.; Lokanc, M.; Eggert, R.

    2013-09-01

    For those PV technologies that rely upon Te, In, and Ga, first-order observations and calculations hint that there may be resource constraints that could inhibit their successful deployment at a SunShot level. These are only first-order approximations, however, and the possibility for an expansion in global Te, In, and Ga supplies needs to be considered in the event that there are upward revisions in their demand and prices.In this study, we examine the current, mid-term, and long-term prospects of Tellurium (Te) for use in PV. We find that the current global supply base of Te would support <10 GW of annual traditional CdTe PV manufacturing production. But as for the possibility that the supply base for Te might be expanded, after compiling several preliminary cumulative availability curves we find that there may be significant upside potential in the supply base for this element - principally vis a vis increasing demand and higher prices. Primarily by reducing the Tellurium intensity in manufacturing and by increasing the recovery efficiency of Te in Cu refining processes, we calculate that it may prove affordable to PV manufacturers to expand the supply base for Te such that 100 GW, or greater, of annual CdTe PV production is possible in the 2030 - 2050 timeframe.

  8. High-temperature order-disorder transitions in the skutterudites CoGe{sub 1.5}Q{sub 1.5} (Q=S, Te)

    SciTech Connect

    Kaltzoglou, Andreas; Powell, Anthony V.; Knight, Kevin S.; Vaqueiro, Paz

    2013-02-15

    The temperature dependence of anion ordering in the skutterudites CoGe{sub 1.5}Q{sub 1.5} (Q=S, Te) has been investigated by powder neutron diffraction. Both materials adopt a rhombohedral structure at room temperature (space group R3{sup Macron} ) in which the anions are ordered trans to each other within Ge{sub 2}Q{sub 2} rings. In CoGe{sub 1.5}S{sub 1.5}, anion ordering is preserved up to the melting point of 950 Degree-Sign C. However, rhombohedral CoGe{sub 1.5}Te{sub 1.5} undergoes a phase transition at 610 Degree-Sign C involving a change to cubic symmetry (space group Im3{sup Macron }). In the high-temperature modification, there is a statistical distribution of anions over the available sites within the Ge{sub 2}Te{sub 2} rings. The structural transition involves a reduction in the degree of distortion of the Ge{sub 2}Te{sub 2} rings which progressively transform from a rhombus to a rectangular shape. The effect of this transition on the thermoelectric properties has been investigated. - Graphical abstract: Powder neutron diffraction reveals that the skutterudite CoGe{sub 1.5}Te{sub 1.5} undergoes a phase transition at 610 Degree-Sign C, involving the disordering of the anions within the Ge{sub 2}Te{sub 2} rings. Highlights: Black-Right-Pointing-Pointer CoGe{sub 1.5}S{sub 1.5} retains an ordered skutterudite structure up to 950 Degree-Sign C. Black-Right-Pointing-Pointer CoGe{sub 1.5}Te{sub 1.5} undergoes an order-disorder phase transition at 610 Degree-Sign C. Black-Right-Pointing-Pointer Below 610 Degree-Sign C, anions are arranged trans to each other within Ge{sub 2}Te{sub 2} rings. Black-Right-Pointing-Pointer Above 610 Degree-Sign C, anions are statistically distributed within the Ge{sub 2}Te{sub 2} rings. Black-Right-Pointing-Pointer The effect of the phase transition on the thermal conductivity is discussed.

  9. From thermoelectric bulk to nanomaterials: Current progress for Bi 2 Te 3 and CoSb 3: From thermoelectric bulk to nanomaterials

    SciTech Connect

    Peranio, N.; Eibl, O.; Bäßler, S.; Nielsch, K.; Klobes, B.; Hermann, R. P.; Daniel, M.; Albrecht, M.; Görlitz, H.; Pacheco, V.; Bedoya-Martínez, N.; Hashibon, A.; Elsässer, C.

    2015-10-29

    We synthesized Bi2Te3 and CoSb3 based nanomaterials and their thermoelectric, structural, and vibrational properties analyzed to assess and reduce ZT-limiting mechanisms. The same preparation and/or characterization methods were applied in the different materials systems. Single-crystalline, ternary p-type Bi15Sb29Te56, and n-type Bi38Te55Se7 nanowires with power factors comparable to nanostructured bulkmaterialswere prepared by potential-pulsed electrochemical deposition in a nanostructured Al2O3 matrix. p-type Sb2Te3, n-type Bi2Te3, and n-type CoSb3 thin films were grown at room temperature using molecular beam epitaxy and were subsequently annealed at elevated temperatures. It yielded polycrystalline, single phase thin films with optimized charge carrier densities. In CoSb3 thin films the speed of sound could be reduced by filling the cage structure with Yb and alloying with Fe yielded p-type material. Bi2(Te0.91Se0.09)3/SiC and (Bi0.26Sb0.74)2Te3/SiC nanocomposites with low thermal conductivities and ZT values larger than 1 were prepared by spark plasma sintering. Nanostructure, texture, chemical composition, as well as electronic and phononic excitations were investigated by X-ray diffraction, nuclear resonance scattering, inelastic neutron scattering, M ossbauer spectroscopy, and transmission electron microscopy. Furthermore, for Bi2Te3 materials, ab-initio calculations together with equilibrium and non-equilibrium molecular dynamics simulations for point defects yielded their formation energies and their effect on lattice thermal conductivity, respectively. Current advances in thermoelectric Bi2Te3 and CoSb3 based nanomaterials are

  10. N-type thermoelectric recycled carbon fibre sheet with electrochemically deposited Bi{sub 2}Te{sub 3}

    SciTech Connect

    Pang, E.J.X.; Pickering, S.J.; Chan, A.; Wong, K.H.; Lau, P.L.

    2012-09-15

    An N-type thermoelectric recycled carbon fibre sheet with bismuth telluride coating has been successfully synthesised through an electro-deposition technique. The Seebeck coefficient and electrical properties of the combined recycled carbon fibre sheet and bismuth telluride films are reported. Classification of the crystal structure, surface morphology and the elemental composition of the resulting deposits are methodically characterised by XRD, SEM and EDX. Cyclic voltammetry is also carried out in nitric acid solutions to investigate the right range of deposition potential. The synthesis N-type thermoelectric sheet has a highest attainable Seebeck coefficient of -54 {mu}V K{sup -1} and an electrical resistivity of 8.9 Multiplication-Sign 10{sup -5} Ohm-Sign m. The results show slight differences in morphologies and thermoelectric properties for the films deposited at varying deposition potential. The increase in thermoelectrical properties of the recycled carbon fibre is in line with the development of using coated recycled fibre for thermoelectrical applications. - Graphical abstract: SEM image of an N-type thermoelectric recycled carbon fibre sheet with Bi{sub 2}Te{sub 3} coatings. Highlights: Black-Right-Pointing-Pointer N-type thermoelectric sheet is synthesis through the electrodeposition of Bi{sub 2}Te{sub 3}. Black-Right-Pointing-Pointer Bi{sub 2}Te{sub 3} composition can be controlled by varying the deposition voltage. Black-Right-Pointing-Pointer Seebeck coefficient and electrical properties of the combined sheet were reported. Black-Right-Pointing-Pointer Material characterisations of the deposits are done using XRD, SEM and EDX.

  11. High-Efficiency CdTe and CIGS Thin-Film Solar Cells: Highlights and Challenges; Preprint

    SciTech Connect

    Noufi, R.; Zweibel, K.

    2006-05-01

    Thin-film photovoltaic (PV) modules of CdTe and Cu(In,Ga)Se2 (CIGS) have the potential to reach cost-effective PV-generated electricity. These technologies have transitioned from the laboratory to the market place. Pilot production and first-time manufacturing are ramping up to higher capacity and enjoying a flood of venture-capital funding. CIGS solar cells and modules have achieved 19.5% and 13% efficiencies, respectively. Likewise, CdTe cells and modules have reached 16.5% and 10.2% efficiencies, respectively. Even higher efficiencies from the laboratory and from the manufacturing line are only a matter of time. Manufacturing-line yield continues to improve and is surpassing 85%. Long-term stability has been demonstrated for both technologies; however, some failures in the field have also been observed, emphasizing the critical need for understanding degradation mechanisms and packaging options. The long-term potential of the two technologies require R&D emphasis on science and engineering-based challenges to find solutions to achieve targeted cost-effective module performance, and in-field durability. Some of the challenges are common to both, e.g., in-situ process control and diagnostics, thinner absorber, understanding degradation mechanisms, protection from water vapor, and innovation in high-speed processing and module design. Other topics are specific to the technology, such as lower-cost and fast-deposition processes for CIGS, and improved back contact and voltage for CdTe devices.

  12. Capacitance and conductance characterization of nano-ZnGa{sub 2}Te{sub 4}/n-Si diode

    SciTech Connect

    Fouad, S.S.; Sakr, G.B.; Yahia, I.S.; Abdel-Basset, D.M.; Yakuphanoglu, F.

    2014-01-01

    Graphical abstract: - Highlights: XRD and DTA micrographs were used to study the structure of ZnGa{sub 2}Te{sub 4}. CV, GV and R{sub s}V of the diode characteristics have been analyzed for the first time. Dielectric constant, dielectric loss, loss tangent and ac conductivity were determined. The interfaces states were determined using conductancevoltage technique. ZnGa{sub 2}Te{sub 4} is a good candidate for electronic device applications. - Abstract: Capacitancevoltage (CV) and conductancevoltage (GV) characteristics of p-ZnGa{sub 2}Te{sub 4}/n-Si HJD were studied over a wide frequency and temperature. Both the interface states density N{sub ss} and series resistance R{sub s} were strongly frequency and temperature dependent. The interface states density N{sub ss} is decreased with increasing frequency and increase with increasing temperature. The values of the built-in potential (V{sub bi}) were calculated and found to increase with increasing temperature and frequency. The values of capacitance C, conductance G, series resistance R{sub s}, corrected capacitance C{sub ADJ}, corrected conductance G{sub ADJ}, dielectric constant (??), dielectric loss (??), loss tangent (tan ?) and the AC conductivity (?{sub ac}) are strongly dependent on the applied frequency, voltage and temperature. The obtained results show that the locations of N{sub ss} and R{sub s} have a significant effect on the electrical characteristics of the studied diode.

  13. Two-particle Bose–Einstein correlations in pp collisions at √s=0.9 and 7 TeV measured with the ATLAS detector

    DOE PAGES [OSTI]

    Aad, G.; Abbott, B.; Abdallah, J.; Abdel Khalek, S.; Abdinov, O.; Aben, R.; Abi, B.; Abolins, M.; AbouZeid, O. S.; Abramowicz, H.; et al

    2015-10-01

    The paper presents studies of Bose–Einstein Correlations (BEC) for pairs of like-sign charged particles measured in the kinematic range pT> 100 MeV and |η|< 2.5 in proton collisions at centre-of-mass energies of 0.9 and 7 TeV with the ATLAS detector at the CERN Large Hadron Collider. The integrated luminosities are approximately 7 μb-1, 190 μb-1 and 12.4 nb-1 for 0.9 TeV, 7 TeV minimum-bias and 7 TeV high-multiplicity data samples, respectively. The multiplicity dependence of the BEC parameters characterizing the correlation strength and the correlation source size are investigated for charged-particle multiplicities of up to 240. A saturation effect inmore » the multiplicity dependence of the correlation source size parameter is observed using the high-multiplicity 7 TeV data sample. In conclusion, the dependence of the BEC parameters on the average transverse momentum of the particle pair is also investigated.« less

  14. Two-particle Bose–Einstein correlations in pp collisions at √s=0.9 and 7 TeV measured with the ATLAS detector

    SciTech Connect

    Aad, G.; Abbott, B.; Abdallah, J.; Abdel Khalek, S.; Abdinov, O.; Aben, R.; Abi, B.; Abolins, M.; AbouZeid, O. S.; Abramowicz, H.; Abreu, H.; Abreu, R.; Abulaiti, Y.; Acharya, B. S.; Adamczyk, L.; Adams, D. L.; Adelman, J.; Adomeit, S.; Adye, T.; Agatonovic-Jovin, T.; Aguilar-Saavedra, J. A.; Agustoni, M.; Ahlen, S. P.; Ahmadov, F.; Aielli, G.; Akerstedt, H.; Åkesson, T. P. A.; Akimoto, G.; Akimov, A. V.; Alberghi, G. L.; Albert, J.; Albrand, S.; Alconada Verzini, M. J.; Aleksa, M.; Aleksandrov, I. N.; Alexa, C.; Alexander, G.; Alexandre, G.; Alexopoulos, T.; Alhroob, M.; Alimonti, G.; Alio, L.; Alison, J.; Allbrooke, B. M. M.; Allison, L. J.; Allport, P. P.; Almond, J.; Aloisio, A.; Alonso, A.; Alonso, F.; Alpigiani, C.; Altheimer, A.; Alvarez Gonzalez, B.; Alviggi, M. G.; Amako, K.; Amaral Coutinho, Y.; Amelung, C.; Amidei, D.; Amor Dos Santos, S. P.; Amorim, A.; Amoroso, S.; Amram, N.; Amundsen, G.; Anastopoulos, C.; Ancu, L. S.; Andari, N.; Andeen, T.; Anders, C. F.; Anders, G.; Anderson, K. J.; Andreazza, A.; Andrei, V.; Anduaga, X. S.; Angelidakis, S.; Angelozzi, I.; Anger, P.; Angerami, A.; Anghinolfi, F.; Anisenkov, A. V.; Anjos, N.; Annovi, A.; Antonaki, A.; Antonelli, M.; Antonov, A.; Antos, J.; Anulli, F.; Aoki, M.; Aperio Bella, L.; Apolle, R.; Arabidze, G.; Aracena, I.; Arai, Y.; Araque, J. P.; Arce, A. T. H.; Arguin, J-F.; Argyropoulos, S.; Arik, M.; Armbruster, A. J.; Arnaez, O.; Arnal, V.; Arnold, H.; Arratia, M.; Arslan, O.; Artamonov, A.; Artoni, G.; Asai, S.; Asbah, N.; Ashkenazi, A.; Åsman, B.; Asquith, L.; Assamagan, K.; Astalos, R.; Atkinson, M.; Atlay, N. B.; Auerbach, B.; Augsten, K.; Aurousseau, M.; Avolio, G.; Azuelos, G.; Azuma, Y.; Baak, M. A.; Baas, A. E.; Bacci, C.; Bachacou, H.; Bachas, K.; Backes, M.; Backhaus, M.; Backus Mayes, J.; Badescu, E.; Bagiacchi, P.; Bagnaia, P.; Bai, Y.; Bain, T.; Baines, J. T.; Baker, O. K.; Balek, P.; Balli, F.; Banas, E.; Banerjee, Sw.; Bannoura, A. A. E.; Bansal, V.; Bansil, H. S.; Barak, L.; Baranov, S. P.; Barberio, E. L.; Barberis, D.; Barbero, M.; Barillari, T.; Barisonzi, M.; Barklow, T.; Barlow, N.; Barnett, B. M.; Barnett, R. M.; Barnovska, Z.; Baroncelli, A.; Barone, G.; Barr, A. J.; Barreiro, F.; Barreiro Guimarães da Costa, J.; Bartoldus, R.; Barton, A. E.; Bartos, P.; Bartsch, V.; Bassalat, A.; Basye, A.; Bates, R. L.; Batley, J. R.; Battaglia, M.; Battistin, M.; Bauer, F.; Bawa, H. S.; Beattie, M. D.; Beau, T.; Beauchemin, P. H.; Beccherle, R.; Bechtle, P.; Beck, H. P.; Becker, K.; Becker, S.; Beckingham, M.; Becot, C.; Beddall, A. J.; Beddall, A.; Bedikian, S.; Bednyakov, V. A.; Bee, C. P.; Beemster, L. J.; Beermann, T. A.; Begel, M.; Behr, J. K.; Belanger-Champagne, C.; Bell, P. J.; Bell, W. H.; Bella, G.; Bellagamba, L.; Bellerive, A.; Bellomo, M.; Belotskiy, K.; Beltramello, O.; Benary, O.; Benchekroun, D.; Bendtz, K.; Benekos, N.; Benhammou, Y.; Benhar Noccioli, E.; Benitez Garcia, J. A.; Benjamin, D. P.; Bensinger, J. R.; Benslama, K.; Bentvelsen, S.; Berge, D.; Bergeaas Kuutmann, E.; Berger, N.; Berghaus, F.; Beringer, J.; Bernard, C.; Bernat, P.; Bernius, C.; Bernlochner, F. U.; Berry, T.; Berta, P.; Bertella, C.; Bertoli, G.; Bertolucci, F.; Bertsche, C.; Bertsche, D.; Besana, M. I.; Besjes, G. J.; Bessidskaia Bylund, O.; Bessner, M.; Besson, N.; Betancourt, C.; Bethke, S.; Bhimji, W.; Bianchi, R. M.; Bianchini, L.; Bianco, M.; Biebel, O.; Bieniek, S. P.; Bierwagen, K.; Biesiada, J.; Biglietti, M.; Bilbao De Mendizabal, J.; Bilokon, H.; Bindi, M.; Binet, S.; Bingul, A.; Bini, C.; Black, C. W.; Black, J. E.; Black, K. M.; Blackburn, D.; Blair, R. E.; Blanchard, J. -B.; Blazek, T.; Bloch, I.; Blocker, C.; Blum, W.; Blumenschein, U.; Bobbink, G. J.; Bobrovnikov, V. S.; Bocchetta, S. S.; Bocci, A.; Bock, C.; Boddy, C. R.; Boehler, M.; Boek, T. T.; Bogaerts, J. A.; Bogdanchikov, A. G.; Bogouch, A.; Bohm, C.; Bohm, J.; Boisvert, V.; Bold, T.; Boldea, V.; Boldyrev, A. S.; Bomben, M.; Bona, M.; Boonekamp, M.; Borisov, A.; Borissov, G.; Borri, M.; Borroni, S.; Bortfeldt, J.; Bortolotto, V.; Bos, K.; Boscherini, D.; Bosman, M.; Boterenbrood, H.; Boudreau, J.; Bouffard, J.; Bouhova-Thacker, E. V.; Boumediene, D.; Bourdarios, C.; Bousson, N.; Boutouil, S.; Boveia, A.; Boyd, J.; Boyko, I. R.; Bozic, I.; Bracinik, J.; Brandt, A.; Brandt, G.; Brandt, O.; Bratzler, U.; Brau, B.; Brau, J. E.; Braun, H. M.; Brazzale, S. F.; Brelier, B.; Brendlinger, K.; Brennan, A. J.; Brenner, R.; Bressler, S.; Bristow, K.; Bristow, T. M.; Britton, D.; Brochu, F. M.; Brock, I.; Brock, R.; Bromberg, C.; Bronner, J.; Brooijmans, G.; Brooks, T.; Brooks, W. K.; Brosamer, J.; Brost, E.; Brown, J.; Bruckman de Renstrom, P. A.; Bruncko, D.; Bruneliere, R.; Brunet, S.; Bruni, A.; Bruni, G.; Bruschi, M.; Bryngemark, L.; Buanes, T.

    2015-10-01

    The paper presents studies of Bose–Einstein Correlations (BEC) for pairs of like-sign charged particles measured in the kinematic range pT> 100 MeV and |η|< 2.5 in proton collisions at centre-of-mass energies of 0.9 and 7 TeV with the ATLAS detector at the CERN Large Hadron Collider. The integrated luminosities are approximately 7 μb-1, 190 μb-1 and 12.4 nb-1 for 0.9 TeV, 7 TeV minimum-bias and 7 TeV high-multiplicity data samples, respectively. The multiplicity dependence of the BEC parameters characterizing the correlation strength and the correlation source size are investigated for charged-particle multiplicities of up to 240. A saturation effect in the multiplicity dependence of the correlation source size parameter is observed using the high-multiplicity 7 TeV data sample. In conclusion, the dependence of the BEC parameters on the average transverse momentum of the particle pair is also investigated.

  15. Femtosecond laser-induced crystallization of amorphous Sb{sub 2}Te{sub 3} film and coherent phonon spectroscopy characterization and optical injection of electron spins

    SciTech Connect

    Li Simian; Huang Huan; Wang Yang; Wu Yiqun; Gan Fuxi; Zhu Weiling; Wang Wenfang; Chen Ke; Yao Daoxin; Lai Tianshu

    2011-09-01

    A femtosecond laser-irradiated crystallizing technique is tried to convert amorphous Sb{sub 2}Te{sub 3} film into crystalline film. Sensitive coherent phonon spectroscopy (CPS) is used to monitor the crystallization of amorphous Sb{sub 2}Te{sub 3} film at the original irradiation site. The CPS reveals that the vibration strength of two phonon modes that correspond to the characteristic phonon modes (A{sub 1g}{sup 1} and E{sub g}) of crystalline Sb{sub 2}Te{sub 3} enhances with increasing laser irradiation fluence (LIF), showing the rise of the degree of crystallization with LIF and that femtosecond laser irradiation is a good post-treatment technique. Time-resolved circularly polarized pump-probe spectroscopy is used to investigate electron spin relaxation dynamics of the laser-induced crystallized Sb{sub 2}Te{sub 3} film. Spin relaxation process indeed is observed, confirming the theoretical predictions on the validity of spin-dependent optical transition selection rule and the feasibility of transient spin-grating-based optical detection scheme of spin-plasmon collective modes in Sb{sub 2}Te{sub 3}-like topological insulators.

  16. First-principles study of atomic and electronic structures of 60° perfect and 30°/90° partial glide dislocations in CdTe

    DOE PAGES [OSTI]

    Kweon, Kyoung E.; Aberg, Daniel; Lordi, Vincenzo

    2016-05-16

    The atomic and electronic structures of 60° glide perfect and 30°/90° glide partial dislocations in CdTe are studied using combined semi-empirical and density functional theory calculations. The calculations predict that the dislocation cores tend to undergo significant reconstructions along the dislocation lines from the singly-periodic (SP) structures, yielding either doubly-periodic (DP) ordering by forming a dimer or quadruply-periodic (QP) ordering by alternating a dimer and a missing dimer. Charge modulation along the dislocation line, accompanied by the QP reconstruction for the Cd-/Te-core 60° perfect and 30° partials or the DP reconstruction for the Cd-core 90° partial, results in semiconducting character,more » as opposed to the metallic character of the SP dislocation cores. Dislocation-induced defect states for the 60° Cd-/Te-core are located relatively close to the band edges, whereas the defect states lie in the middle of the band gap for the 30° Cd-/Te-core partial dislocations. In addition to the intracore charge modulation within each QP core, the possibility of intercore charge transfer between two different dislocation cores when they are paired together in the same system is discussed. As a result, the analysis of the electronic structures reveals the potential role of the dislocations on charge transport in CdTe, particularly in terms of charge trapping and recombination.« less

  17. Ferromagnetism of magnetically doped topological insulators in Cr{sub x}Bi{sub 2−x}Te{sub 3} thin films

    SciTech Connect

    Ni, Y.; Zhang, Z. Hadimani, R. L.; Tuttle, G.; Jiles, D. C.; Nlebedim, I. C.

    2015-05-07

    We investigated the effect of magnetic doping on magnetic and transport properties of Bi{sub 2}Te{sub 3} thin films. Cr{sub x}Bi{sub 2−x}Te{sub 3} thin films with x = 0.03, 0.14, and 0.29 were grown epitaxially on mica substrate with low surface roughness (∼0.4 nm). It is found that Cr is an electron acceptor in Bi{sub 2}Te{sub 3} and increases the magnetization of Cr{sub x}Bi{sub 2−x}Te{sub 3}. When x = 0.14 and 0.29, ferromagnetism appears in Cr{sub x}Bi{sub 2−x}Te{sub 3} thin films, where anomalous Hall effect and weak localization of magnetoconductance were observed. The Curie temperature, coercivity, and remnant Hall resistance of thin films increase with increasing Cr concentration. The Arrott-Noakes plot demonstrates that the critical mechanism of the ferromagnetism can be described better with 3D-Heisenberg model than with mean field model. Our work may benefit for the practical applications of magnetic topological insulators in spintronics and magnetoelectric devices.

  18. Rich structural phase diagram and thermoelectric properties of layered tellurides Mo{sub 1−x}Nb{sub x}Te{sub 2}

    SciTech Connect

    Ikeura, Koji; Sakai, Hideaki; Bahramy, Mohammad Saeed; Ishiwata, Shintaro

    2015-04-01

    MoTe{sub 2} is a rare transition-metal ditelluride having two kinds of layered polytypes, hexagonal structure with trigonal prismatic Mo coordination and monoclinic structure with octahedral Mo coordination. The monoclinic distortion in the latter is caused by anisotropic metal-metal bonding. In this work, we have examined the Nb doping effect on both polytypes of MoTe{sub 2} and clarified a structural phase diagram for Mo{sub 1−x}Nb{sub x}Te{sub 2} containing four kinds of polytypes. A rhombohedral polytype crystallizing in polar space group has been newly identified as a high-temperature metastable phase at slightly Nb-rich composition. Considering the results of thermoelectric measurements and the first-principles calculations, the Nb ion seemingly acts as a hole dopant in the rigid band scheme. On the other hand, the significant interlayer contraction upon the Nb doping, associated with the Te p-p hybridization, is confirmed especially for the monoclinic phase, which implies a shift of the p-band energy level. The origin of the metal-metal bonding in the monoclinic structure is discussed in terms of the d electron counting and the Te p-p hybridization.

  19. Measurement of the Inclusive Jet Cross Section in pp Collisions at √s=7 TeV

    DOE PAGES [OSTI]

    Chatrchyan, S.; Khachatryan, V.; Sirunyan, A. M.; Tumasyan, A.; Adam, W.; Bergauer, T.; Dragicevic, M.; Erö, J.; Fabjan, C.; Friedl, M.; et al

    2011-09-19

    The inclusive jet cross section is measured in pp collisions with a center-of-mass energy of 7 TeV at the Large Hadron Collider using the CMS experiment. The data sample corresponds to an integrated luminosity of 34 pb⁻¹. The measurement is made for jet transverse momenta in the range 18–1100 GeV and for absolute values of rapidity less than 3. The measured cross section extends to the highest values of jet pT ever observed and, within the experimental and theoretical uncertainties, is generally in agreement with next-to-leading-order perturbative QCD predictions.

  20. Electronic structure, transport, and phonons of SrAgChF (Ch = S,Se,Te): Bulk superlattice thermoelectrics

    DOE PAGES [OSTI]

    Gudelli, Vijay Kumar; Kanchana, V.; Vaitheeswaran, G.; Singh, David J.; Svane, Axel; Christensen, Niels Egede; Mahanti, Subhendra D.

    2015-07-15

    Here, we report calculations of the electronic structure, vibrational properties, and transport for the p-type semiconductors, SrAgChF (Ch = S, Se, and Te). We find soft phonons with low frequency optical branches intersecting the acoustic modes below 50 cm–1, indicative of a material with low thermal conductivity. The bands at and near the valence-band maxima are highly two-dimensional, which leads to high thermopowers even at high carrier concentrations, which is a combination that suggests good thermoelectric performance. These materials may be regarded as bulk realizations of superlattice thermoelectrics.

  1. ORISE "AK RlDGE lNSTlT"TE FOR SCIENCE AND EDUCATION

    Office of Legacy Management (LM)

    t\i,;;; il.,. (' . d ORISE "AK RlDGE lNSTlT"TE FOR SCIENCE AND EDUCATION August 1,200l Robert Atkin U.S. Department of Energy Oak Ridge Operations Office P.O. Box 2001 Oak Ridge, TN 3783 1 SUBJECT: CONTRACT NO. DE-AC05000R22750 FINAL REPORT-VERIFICATION SURVEY OF THE NEW BRUNSWICK LABORATORY SITE, NEW BRUNSWICK, NEW JERSEY Dear Mr. Atkin: The Environmental Survey and Site Assessment Program (ESSAP) of the Oak Ridge Institute for Science and Education (ORISE) conducted verification

  2. Search for bottom squarks in p[bar p] collisions at [radical] (s) =1. 8 TeV

    SciTech Connect

    Grinstein, S.; Mostafa, M.; Piegaia, R. ); Alves, G.A.; Carvalho, W.; da Motta, H.; Santoro, A. ); Lima, J.G.; Oguri, V. ); Mao, H.S. ); Gomez, B.; Mooney, P.; Negret, J.P. ); Hoeneisen, B. ); Parua, N. ); Ducros, Y. ); Beri, S.B.; Bhatnagar, V.; Kohli, J.M.; Singh, J.B. ); Shivpuri, R.K. ); Acharya, B.S.; Banerjee, S.; Dugad, S.R.; Gupta, A.; Krishnaswamy, M.R.; Mondal, N.K.; Narasimham, V.S.; Shankar, H

    1999-08-01

    We report on a search for bottom squarks ([tilde b]) produced in p[bar p] collisions at [radical] (s) =1.8 TeV using the DO/ detector at Fermilab. Bottom squarks are assumed to be produced in pairs and to decay to the lightest supersymmetric particle (LSP) and a [ital b] quark with a branching fraction of 100[percent]. The LSP is assumed to be the lightest neutralino and stable. We set limits on the production cross section as a function of [tilde b] mass and LSP mass. [copyright] [ital 1999] [ital The American Physical Society

  3. Search for bottom squarks in p{bar p} collisions at {radical} (s) =1.8 TeV

    SciTech Connect

    Grinstein, S.; Mostafa, M.; Piegaia, R.; Alves, G.A.; Carvalho, W.; da Motta, H.; Santoro, A.; Lima, J.G.; Oguri, V.; Mao, H.S.; Gomez, B.; Mooney, P.; Negret, J.P.; Hoeneisen, B.; Parua, N.; Ducros, Y.; Shivpuri, R.K.; Acharya, B.S.; Banerjee, S.; Dugad, S.R.; Gupta, A.; Krishnaswamy, M.R.; Mondal, N.K.; Narasimham, V.S.; Shankar, H.C.; Park, Y.M.; Choi, S.; Kim, S.K.; Castilla-Valdez, H.; Gonzalez Solis, J.L.; Hernandez-Montoya, R.; Magana-Mendoza, L.; Sanchez-Hernandez, A.; Pawlik, B.; Akimov, V.; Gavrilov, V.; Kuleshov, S.; Belyaev, A.; Dudko, L.V.; Ermolov, P.; Karmanov, D.; Leflat, A.; Manankov, V.; Merkin, M.; Shabalina, E.; Abramov, V.; Babintsev, V.V.; Bezzubov, V.A.; Bojko, N.I.; Burtovoi, V.S.; Chekulaev, S.V.; Denisov, S.P.; Dyshkant, A.; Eroshin, O.V.; Evdokimov, V.N.; Galyaev, A.N.; Goncharov, P.I.; Gurzhiev, S.N.; Kostritskiy, A.V.; Kozelov, A.V.; Kozlovsky, E.A.; Mayorov, A.A.; Babukhadia, L.; Davis, K.; Fein, D.; and others

    1999-08-01

    We report on a search for bottom squarks ({tilde b}) produced in p{bar p} collisions at {radical} (s) =1.8 TeV using the DO/ detector at Fermilab. Bottom squarks are assumed to be produced in pairs and to decay to the lightest supersymmetric particle (LSP) and a {ital b} quark with a branching fraction of 100{percent}. The LSP is assumed to be the lightest neutralino and stable. We set limits on the production cross section as a function of {tilde b} mass and LSP mass. {copyright} {ital 1999} {ital The American Physical Society}

  4. On the formation of nanostructures on a CdTe surface, stimulated by surface acoustic waves under nanosecond laser irradiation

    SciTech Connect

    Vlasenko, A. I.; Baidullaeva, A.; Veleschuk, V. P. Mozol, P. E.; Boiko, N. I.; Litvin, O. S.

    2015-02-15

    The formation of nanoscale structures in the unirradiated part of a p-CdTe crystal surface irradiated by a nanosecond ruby laser is revealed and investigated. It is shown that their formation is caused by the effect of the long-range action of a laser pulse with an intensity of I = 20 MW/cm{sup 2}. Nanoscale-structure formation is explained by the influence of the pressure gradient of the surface acoustic wave, in particular, within the “vacancy-pump” mechanism on the surface.

  5. Mechanisms of charge transport in anisotype n-TiO{sub 2}/p-CdTe heterojunctions

    SciTech Connect

    Brus, V. V.; Ilashchuk, M. I.; Kovalyuk, Z. D.; Maryanchuk, P. D.; Ulyanytsky, K. S.; Gritsyuk, B. N.

    2011-08-15

    Surface-barrier anisotype n-TiO{sub 2}/p-CdTe heterojunctions are fabricated by depositing thin titanium-dioxide films on a freshly cleaved surface of single-crystalline cadmium-telluride wafers by reactive magnetron sputtering. It is established that the electric current through the heterojunctions under investigation is formed by generation-recombination processes in the space-charge region via a deep energy level and tunneling through the potential barrier. The depth and nature of the impurity centers involved in the charge transport are determined.

  6. Effect of microwave treatment on the luminescence properties of CdS and CdTe:Cl Single Crystals

    SciTech Connect

    Red’ko, R. A. Budzulyak, S. I.; Korbutyak, D. V.; Lotsko, A. P.; Vakhnyak, N. D.; Demchyna, L. A.; Kalytchuk, S. M.; Konakova, R. V.; Milenin, V. V.; Bykov, Yu. V. Egorov, S. V.; Eremeev, A. G.

    2015-07-15

    The effect of microwave radiation on the luminescence properties of CdS and CdTe:Cl single crystals is studied. It is established that the exposure of these semiconductors to short-term (≤30 s) microwave radiation substantially modifies their impurity and defect structure. The mechanisms of transformation of the defect subsystem of II–VI single crystals upon microwave treatment are discussed. It is shown that the experimentally observed changes are defined by the nonthermal effects of microwave radiation at a power density of 7.5 W cm{sup –2}; at 90 W cm{sup –2}, nonthermal effects are prevailing.

  7. Spectrum and Charge Ratio of Vertical Cosmic Ray Muons up to Momenta of 2.5 TeV/c

    SciTech Connect

    Schmelling, M.; Hashim, N.O.; Grupen, C.; Luitz, S.; Maciuc, F.; Mailov, A.; Muller, A.-S.; Sander, H.-G.; Schmeling, S.; Tcaciuc, R.; Wachsmuth, H.; Zuber, K.; /Dresden, Tech. U.

    2012-09-14

    The ALEPH detector at LEP has been used to measure the momentum spectrum and charge ratio of vertical cosmic ray muons underground. The sea-level cosmic ray muon spectrum for momenta up to 2.5 TeV/c has been obtained by correcting for the overburden of 320 meter water equivalent (mwe). The results are compared with Monte Carlo models for air shower development in the atmosphere. From the analysis of the spectrum the total flux and the spectral index of the cosmic ray primaries is inferred. The charge ratio suggests a dominantly light composition of cosmic ray primaries with energies up to 10{sup 15} eV.

  8. Effect of charge trapping on effective carrier lifetime in compound semiconductors: High resistivity CdZnTe

    SciTech Connect

    Kamieniecki, Emil

    2014-11-21

    The dominant problem limiting the energy resolution of compound semiconductor based radiation detectors is the trapping of charge carriers. The charge trapping affects energy resolution through the carrier lifetime more than through the mobility. Conventionally, the effective carrier lifetime is determined using a 2-step process based on measurement of the mobility-lifetime product (μτ) and determining drift mobility using time-of-flight measurements. This approach requires fabrication of contacts on the sample. A new RF-based pulse rise-time method, which replaces this 2-step process with a single non-contact direct measurement, is discussed. The application of the RF method is illustrated with high-resistivity detector-grade CdZnTe crystals. The carrier lifetime in the measured CdZnTe, depending on the quality of the crystals, was between about 5 μs and 8 μs. These values are in good agreement with the results obtained using conventional 2-step approach. While the effective carrier lifetime determined from the initial portion of the photoresponse transient combines both recombination and trapping in a manner similar to the conventional 2-step approach, both the conventional and the non-contact RF methods offer only indirect evaluation of the effect of charge trapping in the semiconductors used in radiation detectors. Since degradation of detector resolution is associated not with trapping but essentially with detrapping of carriers, and, in particular, detrapping of holes in n-type semiconductors, it is concluded that evaluation of recombination and detrapping during photoresponse decay is better suited for evaluation of compound semiconductors used in radiation detectors. Furthermore, based on previously reported data, it is concluded that photoresponse decay in high resistivity CdZnTe at room temperature is dominated by detrapping of carriers from the states associated with one type of point defect and by recombination of carriers at one type of

  9. Double Higgs boson production via WW fusion in TeV e sup + e sup minus collisions

    SciTech Connect

    Barger, V.; Han, T. . Dept. of Physics)

    1990-04-10

    The production of two standard model Higgs bosons via the WW fusion process e{sup +}e{sup {minus}} {r arrow} {bar v}{sub e}v{sub e}HH would test the predicted HHH, HWW and HHWW couplings. At TeV energies this fusion cross section dominates over that from e{sup +}e{sup {minus}} {r arrow} ZHH and would give significant event rates for M{sub H}{approx lt} 1/2 M{sub z} at high luminosity e{sup +}e{sup {minus}} colliders. The authors evaluate the rates and present the dynamical distributions.

  10. Influence of the thickness of a crystal on the electrical characteristics of Cd(Zn)Te detectors

    SciTech Connect

    Sklyarchuk, V.; Fochuk, p.; Rarenko, I.; Zakharuk, Z.; Sklyarchuk, O. F.; Bolotnikov, A. E.; James, R. B.

    2015-08-01

    We studied the electrical characteristics of Cd(Zn)Te detectors with rectifying contacts and varying thicknesses, and established that their geometrical dimensions affect the measured electrical properties. We found that the maximum value of the operating-bias voltage and the electric field in the detector for acceptable values of the dark current can be achieved when the crystal has an optimum thickness. This finding is due to the combined effect of generation-recombination in the space-charge region and space-charge limited currents (SCLC).

  11. Measurement of the Proton-Air Cross Section at ?s=57 TeV with the Pierre Auger Observatory

    SciTech Connect

    Abreu, P.; Aglietta, M.; Ahn, E. J.; Albuquerque, I. F. M.; Allard, D.; Allekotte, I.; Allen, J.; Allison, P.; Almeda, A.; Alvarez Castillo, J.; Alvarez-Muiz, J.; Ambrosio, M.; Aminaei, A.; Anchordoqui, L.; Andringa, S.; Anti?i?, T.; Aramo, C.; Arganda, E.; Arqueros, F.; Asorey, H.; Assis, P.; Aublin, J.; Ave, M.; Avenier, M.; Avila, G.; Bcker, T.; Balzer, M.; Barber, K. B.; Barbosa, A. F.; Bardenet, R.; Barroso, S. L. C.; Baughman, B.; Buml, J.; Beatty, J. J.; Becker, B. R.; Becker, K. H.; Belltoile, A.; Bellido, J. A.; BenZvi, S.; Berat, C.; Bertou, X.; Biermann, P. L.; Billoir, P.; Blanco, F.; Blanco, M.; Bleve, C.; Blmer, H.; Boh?ov, M.; Boncioli, D.; Bonifazi, C.; Bonino, R.; Borodai, N.; Brack, J.; Brogueira, P.; Brown, W. C.; Bruijn, R.; Buchholz, P.; Bueno, A.; Burton, R. E.; Caballero-Mora, K. S.; Caramete, L.; Caruso, R.; Castellina, A.; Catalano, O.; Cataldi, G.; Cazon, L.; Cester, R.; Chauvin, J.; Cheng, S. H.; Chiavassa, A.; Chinellato, J. A.; Chirinos Diaz, J.; Chudoba, J.; Clay, R. W.; Coluccia, M. R.; Conceio, R.; Contreras, F.; Cook, H.; Cooper, M. J.; Coppens, J.; Cordier, A.; Coutu, S.; Covault, C. E.; Creusot, A.; Criss, A.; Cronin, J.; Curutiu, A.; Dagoret-Campagne, S.; Dallier, R.; Dasso, S.; Daumiller, K.; Dawson, B. R.; de Almeida, R. M.; De Domenico, M.; De Donato, C.; de Jong, S. J.; De La Vega, G.; de Mello Junior, W. J. M.; de Mello Neto, J. R. T.; De Mitri, I.; de Souza, V.; de Vries, K. D.; Decerprit, G.; del Peral, L.; del Ro, M.; Deligny, O.; Dembinski, H.; Dhital, N.; Di Giulio, C.; Daz Castro, M. L.; Diep, P. N.; Dobrigkeit, C.; Docters, W.; DOlivo, J. C.; Dong, P. N.; Dorofeev, A.; dos Anjos, J. C.; Dova, M. T.; DUrso, D.; Dutan, I.; Ebr, J.; Engel, R.; Erdmann, M.; Escobar, C. O.; Espadanal, J.; Etchegoyen, A.; Facal San Luis, P.; Fajardo Tapia, I.; Falcke, H.; Farrar, G.; Fauth, A. C.; Fazzini, N.; Ferguson, A. P.; Ferrero, A.; Fick, B.; Filevich, A.; Filip?i?, A.; Fliescher, S.; Fracchiolla, C. E.; Fraenkel, E. D.; Frhlich, U.; Fuchs, B.; Gaior, R.; Gamarra, R. F.; Gambetta, S.; Garca, B.; Garcia-Gamez, D.; Garcia-Pinto, D.; Gascon, A.; Gemmeke, H.; Gesterling, K.; Ghia, P. L.; Giaccari, U.; Giller, M.; Glass, H.; Gold, M. S.; Golup, G.; Gomez Albarracin, F.; Gmez Berisso, M.; Gonalves, P.; Gonzalez, D.; Gonzalez, J. G.; Gookin, B.; Gra, D.; Gorgi, A.; Gouffon, P.; Gozzini, S. R.; Grashorn, E.; Grebe, S.; Griffith, N.; Grigat, M.; Grillo, A. F.; Guardincerri, Y.; Guarino, F.; Guedes, G. P.; Guzman, A.; Hague, J. D.; Hansen, P.; Harari, D.; Harmsma, S.; Harrison, T. A.; Harton, J. L.; Haungs, A.; Hebbeker, T.; Heck, D.; Herve, A. E.; Hojvat, C.; Hollon, N.; Holmes, V. C.; Homola, P.; Hrandel, J. R.; Horneffer, A.; Horvath, P.; Hrabovsk, M.; Huege, T.; Insolia, A.; Ionita, F.; Italiano, A.; Jarne, C.; Jiraskova, S.; Josebachuili, M.; Kadija, K.; Kampert, K. H.; Karhan, P.; Kasper, P.; Kgl, B.; Keilhauer, B.; Keivani, A.; Kelley, J. L.; Kemp, E.; Kieckhafer, R. M.; Klages, H. O.; Kleifges, M.; Kleinfeller, J.; Knapp, J.; Koang, D.-H.; Kotera, K.; Krohm, N.; Krmer, O.; Kruppke-Hansen, D.; Kuehn, F.; Kuempel, D.; Kulbartz, J. K.; Kunka, N.; La Rosa, G.; Lachaud, C.; Lauer, R.; Lautridou, P.; Le Coz, S.; Leo, M. S. A. B.; Lebrun, D.; Lebrun, P.; Leigui de Oliveira, M. A.; Lemiere, A.; Letessier-Selvon, A.; Lhenry-Yvon, I.; Link, K.; Lpez, R.; Lopez Agera, A.; Louedec, K.; Lozano Bahilo, J.; Lu, L.; Lucero, A.; Ludwig, M.; Lyberis, H.; Macolino, C.; Maldera, S.; Mandat, D.; Mantsch, P.; Mariazzi, A. G.; Marin, J.; Marin, V.; Maris, I. C.; Marquez Falcon, H. R.; Marsella, G.; Martello, D.; Martin, L.; Martinez, H.; Martnez Bravo, O.; Mathes, H. J.; Matthews, J.; Matthews, J. A. J.; Matthiae, G.; Maurizio, D.; Mazur, P. O.; Medina-Tanco, G.; Melissas, M.; Melo, D.; Menichetti, E.; Menshikov, A.; Mertsch, P.; Meurer, C.; Mi?anovi?, S.; Micheletti, M. I.; Miller, W.; Miramonti, L.; Molina-Bueno, L.; Mollerach, S.; Monasor, M.; Monnier Ragaigne, D.; Montanet, F.; Morales, B.; Morello, C.; Moreno, E.; Moreno, J. C.; Morris, C.; Mostaf, M.; Moura, C. A.; Mueller, S.; Muller, M. A.; Mller, G.; Mnchmeyer, M.; Mussa, R.; Navarra, G.; Navarro, J. L.; Navas, S.; Necesal, P.; Nellen, L.; Nelles, A.; Neuser, J.; Nhung, P. T.; Niemietz, L.; Nierstenhoefer, N.; Nitz, D.; Nosek, D.; Noka, L.; Nyklicek, M.; Oehlschlger, J.; Olinto, A.; Olmos-Gilbaja, V. M.; Ortiz, M.; Pacheco, N.; Pakk Selmi-Dei, D.; Palatka, M.; Pallotta, J.; Palmieri, N.; Parente, G.; Parizot, E.; Parra, A.; Parsons, R. D.; Pastor, S.; Paul, T.; Pech, M.; P?kala, J.; Pelayo, R.; Pepe, I. M.; Perrone, L.; Pesce, R.; Petermann, E.; Petrera, S.; Petrinca, P.; Petrolini, A.; Petrov, Y.; Petrovic, J.; Pfendner, C.; Phan, N.

    2012-08-10

    We report a measurement of the proton-air cross section for particle production at the center-of-mass energy per nucleon of 57 TeV. This is derived from the distribution of the depths of shower maxima observed with the Pierre Auger Observatory: systematic uncertainties are studied in detail. Analyzing the tail of the distribution of the shower maxima, a proton-air cross section of [50522(stat)+28-36(syst)] mb is found.

  12. Model independent search for new phenomena in pp collisions at√s=1.96 TeV

    SciTech Connect

    Abazov, Victor Mukhamedovich; Abbott, Braden Keim; Acharya, Bannanje Sripath; Adams, Mark Raymond; Adams, Todd; Alexeev, Guennadi D; Alkhazov, Georgiy D; Alton, Andrew K; Alverson, George O; Alves, Gilvan Augusto; Aoki, Masato

    2012-05-24

    We describe a model independent search for physics beyond the standard model in lepton final states. We examine 117 final states using 1.1 fb-1 of pp collisions data at √s = 1.96 TeV collected with the D0 detector. We conclude that all observed discrepancies between data and model can be attributed to uncertainties in the standard model background modeling, and hence we do not see any evidence for physics beyond the standard model.

  13. Defect study in molecular beam epitaxy-grown HgCdTe films with activated and unactivated arsenic

    SciTech Connect

    Izhnin, I. I.; Dvoretsky, S. A.; Mikhailov, N. N.; Varavin, V. S.; Mynbaev, K. D.; Fitsych, O. I.; Pociask-Bialy, M.; Sheregii, E.; Voitsekhovskii, A. V.

    2014-04-28

    A defect study was performed on molecular beam epitaxy-grown HgCdTe films in situ doped with arsenic. Doping was performed from either effusion cell or cracker cell, and studied were both as-grown samples and samples subjected to arsenic activation annealing. Electrical properties of the films were investigated with the use of ion milling as a means of stirring defects in the material. As a result of the study, it was confirmed that the most efficient incorporation of electrically active arsenic occurs at the cracking zone temperature of 700?C. Interaction between arsenic and tellurium during the growth was observed and is discussed in the paper.

  14. Crystal structure, electronic structure and physical properties of the new low-valent thallium silicon telluride Tl{sub 6}Si{sub 2}Te{sub 6} in comparison to Tl{sub 6}Ge{sub 2}Te{sub 6}

    SciTech Connect

    Assoud, Abdeljalil [Department of Chemistry, University of Waterloo, Waterloo, Ont., N2L 3G1 (Canada); Soheilnia, Navid [Department of Chemistry, University of Waterloo, Waterloo, Ont., N2L 3G1 (Canada); Kleinke, Holger [Department of Chemistry, University of Waterloo, Waterloo, Ont., N2L 3G1 (Canada)]. E-mail: kleinke@uwaterloo.ca

    2006-08-15

    The title compounds were prepared from the elements in the stoichiometric ratio at 800deg. C under exclusion of air. Tl{sub 6}Si{sub 2}Te{sub 6} crystallizes in the space group P1-bar , isostructural with Tl{sub 6}Ge{sub 2}Te{sub 6}, with a=9.4235(6)A, b=9.6606(7)A, c=10.3889(7)A, {alpha}=89.158(2){sup o}, {beta}=96.544(2){sup o}, {gamma}=100.685(2){sup o}, V=923.3(1)A{sup 3} (Z=2). Its structure is composed of dimeric [Si{sub 2}Te{sub 6}]{sup 6-} units with a Si-Si single bond, while the Tl atoms are irregularly coordinated by five to six Te atoms. Numerous weakly bonding Tl-Tl contacts exist. Both title compounds are black semiconductors with small band gaps, calculated to be 0.9eV for Tl{sub 6}Si{sub 2}Te{sub 6} and 0.5eV for Tl{sub 6}Ge{sub 2}Te{sub 6}. The Seebeck coefficients are +65{mu}VK{sup -1} in case of Tl{sub 6}Si{sub 2}Te{sub 6} and +150{mu}VK{sup -1} in case of Tl{sub 6}Ge{sub 2}Te{sub 6} at 300K, and the electrical conductivities are 5.5 and 3{omega}{sup -1}cm{sup -1}, respectively.

  15. Role of chalcogen vapor annealing in inducing bulk superconductivity in Fe1+yTe1-xSex [How does annealing in chalcogen vapor induce superconductivity in Fe1+yTe-xSex?

    SciTech Connect

    Lin, Wenzhi; Ganesh, P.; Gianfrancesco, Anthony; Berlijn, Tom; Maier, Thomas A.; Kalinin, Sergei V.; Sales, Brian C.; Pan, Minghu

    2015-02-01

    Recent investigations have shown that Fe1+yTe1-xSex can be made superconducting by annealing it in Se and O vapors. The current lore is that these chalcogen vapors induce superconductivity by removing the magnetic excess Fe atoms. To investigate this phenomenon we performed a combination of magnetic susceptibility, specific heat and transport measurements together with scanning tunneling microscopy and spectroscopy and density functional theory calculations on Fe1+yTe1-xSex treated with Te vapor. We conclude that the main role of the Te vapor is to quench the magnetic moments of the excess Fe atoms by forming FeTem (m ≥ 1) complexes. We show that the remaining FeTem complexes are still damaging to the superconductivity and therefore that their removal potentially could further improve superconductive properties in these compounds.

  16. Molecular beam epitaxial growth of Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator p-n junction

    SciTech Connect

    Zeng, Zhaoquan; Morgan, Timothy A.; Li, Chen; Hirono, Yusuke; Hu, Xian; Hawkridge, Michael E.; Benamara, Mourad; Salamo, Gregory J.; Fan, Dongsheng; Yu, Shuiqing; Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701 ; Zhao, Yanfei; Lee, Joon Sue; Wang, Jian; The Center for Nanoscale Science and Department of Physics, The Pennsylvania State University, University Park, PA 16802 ; Wang, Zhiming M.; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054; Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083

    2013-07-15

    High quality Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} topological insulators films were epitaxially grown on GaAs (111) substrate using solid source molecular beam epitaxy. Their growth and behavior on both vicinal and non-vicinal GaAs (111) substrates were investigated by reflection high-energy electron diffraction, atomic force microscopy, X-ray diffraction, and high resolution transmission electron microscopy. It is found that non-vicinal GaAs (111) substrate is better than a vicinal substrate to provide high quality Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} films. Hall and magnetoresistance measurements indicate that p type Sb{sub 2}Te{sub 3} and n type Bi{sub 2}Te{sub 3} topological insulator films can be directly grown on a GaAs (111) substrate, which may pave a way to fabricate topological insulator p-n junction on the same substrate, compatible with the fabrication process of present semiconductor optoelectronic devices.

  17. Search for W' decaying to tau lepton and neutrino in proton-proton collisions at $\\sqrt{s}$ = 8 TeV

    SciTech Connect

    Khachatryan, Vardan

    2015-08-19

    We found that the first search for a heavy charged vector boson in the final state with a tau lepton and a neutrino is reported, using 19.7 fb-1 of LHC data at √s = 8 TeV. A signal would appear as an excess of events in kinematic regions where the standard model background is low. No excess is observed. Limits are set on a model in which the W' decays preferentially to fermions of the third generation. Our results substantially extend previous constraints on this model. Masses below 2.0 to 2.7 TeV are excluded, depending on the model parameters. In addition, the existence of a W' boson with universal fermion couplings is excluded at 95% confidence level, for W' masses below 2.7 TeV.

  18. Role of polycrystallinity in CdTe and CuInSe{sub 2} photovoltaic cells. Annual subcontract report, 1 April 1990--31 March 1991

    SciTech Connect

    Sites, J.R.

    1991-12-31

    The polycrystalline nature of thin-film CdTe and CuInSe{sub 2} solar cells continues to be a major factor in several individual losses that limit overall cell efficiency. This report describes progress in the quantitative separation of these losses, including both measurement and analysis procedures. It also applies these techniques to several individual cells to help document the overall progress with CdTe and CuInSe{sub 2} cells. Notably, CdTe cells from Photon Energy have reduced window photocurrent losses to 1 mA/Cm{sup 2}; those from the University of South Florida have achieved a maximum power voltage of 693 mV; and CuInSe{sub 2} cells from International Solar Electric Technology have shown a hole density as high as 7 {times} 10{sup 16} cm{sup {minus}3}, implying a significant reduction in compensation. 9 refs.

  19. Pauli-limited effect in the magnetic phase diagram of FeSe{sub x}Te{sub 1−x} thin films

    SciTech Connect

    Zhuang, J. C.; Li, Z.; Xu, X.; Wang, L.; Yeoh, W. K.; Wang, X. L.; Du, Y. E-mail: zxshi@seu.edu.cn Dou, S. X. E-mail: zxshi@seu.edu.cn; Xing, X. Z.; Shi, Z. X. E-mail: zxshi@seu.edu.cn

    2015-11-30

    We present a detailed investigation on the doping dependence of the upper critical field H{sub c2}(T) of FeSe{sub x}Te{sub 1−x} thin films (0.18 ≤ x ≤ 0.90) by measuring the electrical resistivity as a function of magnetic field. The H{sub c2}(T) curves exhibit a downturn behavior with decreasing temperature in all the samples, owing to the Pauli-limited effect (spin paramagnetic effect). The Pauli-limited effect on the upper critical field can be monotonically modulated by variation of the Se/Te composition. Our results show that Te-doping induced disorder and excess Fe atoms give rise to enhancement of the Pauli-limited effect.

  20. Preliminary studies of the use of an automated flow-cell electrodeposition system for the formation of CdTe thin films by electrochemical atomic layer epitaxy

    SciTech Connect

    Huang, B.M.; Colletti, L.P.; Gregory, B.W.; Anderson, J.L.; Stickney, J.L.

    1995-09-01

    This paper is the first report of the formation of thin films, thicker than ten monolayers, using electrochemical atomic layer epitaxy (ECALE). Thin films of CdTe have been electrodeposited on polycrystalline gold substrates in an electrochemical thin-layer flow-cell deposition system using the ECALE methodology. Studies of the deposit morphology have been performed using scanning electron microscopy and atomic force microscope Significant improvements in deposit morphology are reported as a result of changes to the ECALE cycle program and deposition hardware. Deposit components analyzed using electron probe microanalysis and inductively coupled plasma atomic emission spectrometry, were found to be stoichiometric and nearly independent of the number of cycles and the Cd deposition potential. In addition, the deposition rate was shown to be one CdTe monolayer per cycle (half monolayer of Cd and half monolayer of Te per ECALE cycle).