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Sample records for georgia athens ga

  1. Making it pay in Athens, GA

    SciTech Connect

    Malloy, M.G.

    1997-04-01

    The materials recovery facility (MRF) in Athens, GA, is a well-fed recycling facility. But, if the local government has its way, it will be even better fed in the near future. The Athens-Clarke County (ACC) regional municipality in which the facility resides has a put-or-pay contract with the plant`s owner/operator, under which the more it feeds the MRF, the more money it receives in return, through the sale of recycled end products. The ACC Solid Waste Department uses a volume-based waste collection system that encourages residents to recycle--the more they recycle, the less trash they have to put out, and the less they pay each month. The Athens facility, which will be a featured site tour at next month`s WasteExpo `97 in nearby Atlanta, had its ground-breaking two years ago, in April 1995. ACC is responsible for delivering material--or seeing that recyclables are delivered--to the MRF, which is owned and operated by Resource Recovery Systems (RRS, Centerbrook, Conn.). Over the past year, ACC has stepped up various incentives for businesses to recycle and send their recyclables to the facility, including instituting pilot programs for commercial interests that offer them versions of volume-based collection similar to that done by residents.

  2. Georgia - Compare - U.S. Energy Information Administration (EIA)

    Energy Information Administration (EIA) (indexed site)

    Georgia Georgia

  3. Georgia - Rankings - U.S. Energy Information Administration (EIA)

    Energy Information Administration (EIA) (indexed site)

    Georgia Georgia

  4. Georgia - Search - U.S. Energy Information Administration (EIA)

    Energy Information Administration (EIA) (indexed site)

    Georgia Georgia

  5. Georgia and Arkansas Residential Energy Code Field Studies | Department of

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Energy Georgia and Arkansas Residential Energy Code Field Studies Georgia and Arkansas Residential Energy Code Field Studies Lead Performer: Southeast Energy Efficiency Alliance - Atlanta, GA Partners: - Advanced Energy - Raleigh, NC - Arkansas Economic Development Commission, Energy Office - Little Rock, AR - Georgia Department of Community Affairs - Atlanta, GA - Georgia Environmental Finance Authority - Atlanta, GA - Southface - Atlanta, GA DOE Total Funding: $1,399,999 Cost Share:

  6. Dalton, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Georgia: Energy Resources (Redirected from Dalton, GA) Jump to: navigation, search Equivalent URI DBpedia Coordinates 34.7698021, -84.9702228 Show Map Loading map......

  7. Workplace Charging Challenge Partner: Georgia Institute of Technology |

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Department of Energy Georgia Institute of Technology Workplace Charging Challenge Partner: Georgia Institute of Technology Workplace Charging Challenge Partner: Georgia Institute of Technology Joined the Challenge: February 2014 Headquarters: Atlanta, GA Charging Location: Atlanta, GA Domestic Employees: 6,490 Georgia Institute of Technology is a leader in innovation and is committed to practicing sustainability. Georgia Tech's Parking and Transportation Services office is renowned for its

  8. Athens, Ohio: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Registered Research Institutions in Athens, Ohio Ohio University Voinovich School of Leadership and Public Affairs Registered Energy Companies in Athens, Ohio American...

  9. Categorical Exclusion Determinations: Georgia | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Georgia Categorical Exclusion Determinations: Georgia Location Categorical Exclusion Determinations issued for actions in Georgia. DOCUMENTS AVAILABLE FOR DOWNLOAD May 2, 2016 CX-100596 Categorical Exclusion Determination Energy Savings Performance Contract (ESPC) at Marine Corps Logistics Base Albany (MCLBA), GA - Biomass Steam Turbine Generator Award Number: DE-EE0007461 CX(s) Applied: A9 Federal Energy Management Program Date: 04/13/2016 Location(s): GA Office(s): Golden Field Office March 4,

  10. In Savannah, Georgia, Even the Data is Green | Department of...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    In Savannah, Georgia, Even the Data is Green In Savannah, Georgia, Even the Data is Green May 5, 2011 - 4:49pm Addthis The new energy efficient IT Data Center in Savannah, GA. | ...

  11. Georgia Power Company (GPC), Oglethorpe Power Corporation (OPC), Municipal

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Electric Authority of Georgia (MEAG) | Department of Energy Georgia Power Company (GPC), Oglethorpe Power Corporation (OPC), Municipal Electric Authority of Georgia (MEAG) Georgia Power Company (GPC), Oglethorpe Power Corporation (OPC), Municipal Electric Authority of Georgia (MEAG) Location: Waynesboro, GA Eligibility: 1703 Snapshot In February 2014, the Department of Energy issued $6.5 billion in loan guarantees to support the construction of the nation's next generation of advanced

  12. Newton County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    in Newton County, Georgia Covington, Georgia Mansfield, Georgia Newborn, Georgia Oxford, Georgia Porterdale, Georgia Social Circle, Georgia Retrieved from "http:...

  13. Chatham County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    County, Georgia Bloomingdale, Georgia Garden City, Georgia Georgetown, Georgia Isle of Hope, Georgia Montgomery, Georgia Pooler, Georgia Port Wentworth, Georgia Savannah, Georgia...

  14. Carbohydrate and lignin are simultaneously solubilized from unpretreat...

    Office of Scientific and Technical Information (OSTI)

    University of Georgia, Athens, GA Georgia Institute of Technology ORNL North Carolina State University National Renewable Energy Laboratory (NREL) National Energy Renewable ...

  15. Liberty County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    A. Places in Liberty County, Georgia Allenhurst, Georgia Flemington, Georgia Fort Stewart, Georgia Gumbranch, Georgia Hinesville, Georgia Midway, Georgia Riceboro, Georgia...

  16. Georgia State Historic Preservation Programmatic Agreement | Department of

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Energy Georgia State Historic Preservation Programmatic Agreement Georgia State Historic Preservation Programmatic Agreement Fully executed programmatic agreement between DOE, State Energy Office and State Historic Preservation Office. state_historic_preservation_programmatic_agreement_ga.pdf (1.06 MB) More Documents & Publications Arizona State Historic Preservation Programmatic Agreement Delaware State Historic Preservation Programmatic Agreement Florida State Historic Preservation

  17. City of Hampton, Georgia (Utility Company) | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    search Name: City of Hampton Place: Georgia Website: www.cityofhampton-ga.govservi Outage Hotline: 770-946-4306; after hours- 911 References: EIA Form EIA-861 Final Data...

  18. City of La Grange, Georgia (Utility Company) | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    to: navigation, search Name: City of La Grange Place: Georgia Phone Number: 706-883-2030 Website: www.lagrange-ga.orgUtilities. Outage Hotline: 706-883-2130 References: EIA...

  19. Walton County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Number 3 Climate Zone Subtype A. Places in Walton County, Georgia Between, Georgia Good Hope, Georgia Jersey, Georgia Loganville, Georgia Monroe, Georgia Social Circle, Georgia...

  20. Madison County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Number 3 Climate Zone Subtype A. Places in Madison County, Georgia Carlton, Georgia Colbert, Georgia Comer, Georgia Danielsville, Georgia Hull, Georgia Ila, Georgia Royston,...

  1. Rabun County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Places in Rabun County, Georgia Clayton, Georgia Dillard, Georgia Mountain City, Georgia Sky Valley, Georgia Tallulah Falls, Georgia Tiger, Georgia Retrieved from "http:...

  2. Cherokee County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Ball Ground, Georgia Canton, Georgia Holly Springs, Georgia Mountain Park, Georgia Nelson, Georgia Waleska, Georgia Woodstock, Georgia Retrieved from "http:en.openei.orgw...

  3. Gwinnett County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    BJ Gas Recovery Biomass Facility Places in Gwinnett County, Georgia Auburn, Georgia Berkeley Lake, Georgia Braselton, Georgia Buford, Georgia Dacula, Georgia Duluth, Georgia...

  4. fe0013961-GaTech | netl.doe.gov

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Performer Georgia Tech Research Corporation, Atlanta GA 30332 Background While earlier research focused on the properties of the hydrate mass per se (Sloan Jr and Koh 2007), ...

  5. Hart County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Number 3 Climate Zone Subtype A. Places in Hart County, Georgia Bowersville, Georgia Canon, Georgia Hartwell, Georgia Reed Creek, Georgia Royston, Georgia Retrieved from "http:...

  6. Houston County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    County, Georgia Byron, Georgia Centerville, Georgia Perry, Georgia Robins AFB, Georgia Warner Robins, Georgia Retrieved from "http:en.openei.orgwindex.php?titleHoustonCounty,...

  7. Meriwether County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Climate Zone Number 3 Climate Zone Subtype A. Places in Meriwether County, Georgia Gay, Georgia Greenville, Georgia Haralson, Georgia Lone Oak, Georgia Luthersville, Georgia...

  8. Harris County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Harris County, Georgia Hamilton, Georgia Pine Mountain, Georgia Shiloh, Georgia Waverly Hall, Georgia West Point, Georgia Retrieved from "http:en.openei.orgw...

  9. Middle Georgia Biofuels | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Georgia Biofuels Jump to: navigation, search Name: Middle Georgia Biofuels Place: East Dublin, Georgia Zip: 31027 Product: Georgia-based biodiesel producer. References: Middle...

  10. GA-AL-SC | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    GA-AL-SC GA-AL-SC October 1, 2012 ALA-1-N Wholesale Power Rate Schedule Area: PowerSouth Energy Cooperative System: Georgia-Alabama-South Carolina October 1, 2012 Duke-1-E Wholesale Power Rate Schedule Area: Duke On-System System: Georgia-Alabama-South Carolina October 1, 2012 Duke-2-E Wholesale Power Rate Schedule Area: Central System: Georgia-Alabama-South Carolina October 1, 2012 Duke-3-E Wholesale Power Rate Schedule Area: None System: Georgia-Alabama-South Carolina October 1, 2012 Duke-4-E

  11. Secretary Bodman Touts Importance of Cellulosic Ethanol at Georgia

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Biorefinery Groundbreaking | Department of Energy Touts Importance of Cellulosic Ethanol at Georgia Biorefinery Groundbreaking Secretary Bodman Touts Importance of Cellulosic Ethanol at Georgia Biorefinery Groundbreaking October 6, 2007 - 4:21pm Addthis SOPERTON, GA - U.S. Secretary of Energy Samuel W. Bodman today attended a groundbreaking ceremony for Range Fuels' biorefinery - one of the nation's first commercial-scale cellulosic ethanol biorefineries - and made the following statement.

  12. SREL Reprint #3047

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Department of Geology, The University of Georgia, Athens, GA 30602, USA 4Department of Chemistry and Earth Sciences, Dartmouth College, Hanover NH, USA Abstract: Despite the...

  13. SREL Reprint #3210

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    & Environmental Sciences, University of Kentucky, Lexington, KY, USA 4Department of Microbiology, University of Georgia, Athens, GA, USA Abstract: Arkashin Schurf (Arkashin) and...

  14. Quick Facts | Department of Energy

    Energy Saver

    Athens Tech Road Elberton, GA 30635-6711 Telephone: 706-213-3800 FAX: 706-213-3884 Marketing Area Georgia, Florida, Alabama, Mississippi, Tennessee, Kentucky, Virginia, North ...

  15. Franklin County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Climate Zone Number 4 Climate Zone Subtype A. Places in Franklin County, Georgia Canon, Georgia Carnesville, Georgia Franklin Springs, Georgia Gumlog, Georgia Lavonia,...

  16. Appling County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Georgia Appling County Pellets Places in Appling County, Georgia Baxley, Georgia Graham, Georgia Surrency, Georgia Retrieved from "http:en.openei.orgw...

  17. Upson County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Climate Zone Number 3 Climate Zone Subtype A. Places in Upson County, Georgia Hannahs Mill, Georgia Lincoln Park, Georgia Salem, Georgia Sunset Village, Georgia Thomaston,...

  18. Peach County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    A. Places in Peach County, Georgia Byron, Georgia Fort Valley, Georgia Perry, Georgia Warner Robins, Georgia Retrieved from "http:en.openei.orgwindex.php?titlePeachCounty,G...

  19. Columbia County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Places in Columbia County, Georgia Evans, Georgia Grovetown, Georgia Harlem, Georgia Martinez, Georgia Retrieved from "http:en.openei.orgwindex.php?titleColumbiaCounty,Geor...

  20. Oconee County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Climate Zone Number 3 Climate Zone Subtype A. Places in Oconee County, Georgia Bishop, Georgia Bogart, Georgia North High Shoals, Georgia Watkinsville, Georgia Retrieved...

  1. Terrell County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Number 3 Climate Zone Subtype A. Places in Terrell County, Georgia Bronwood, Georgia Dawson, Georgia Parrott, Georgia Sasser, Georgia Retrieved from "http:en.openei.orgw...

  2. BRMF Georgia Mountain Biofuels | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    BRMF Georgia Mountain Biofuels Jump to: navigation, search Name: BRMFGeorgia Mountain Biofuels Place: Clayton, Georgia Product: Biodiesel plant developer in Georgia. References:...

  3. West Athens, California: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Hide Map This article is a stub. You can help OpenEI by expanding it. West Athens is a census-designated place in Los Angeles County, California.1 References...

  4. SREL Reprint #3188

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    8 Development and characterization of 12 microsatellite loci for the Dwarf Salamander, Eurycea quadridigitata Anna M. Mckee1,2, Stacey L. Lance3, Kenneth L. Jones4, Cris Hagen3, and Travis C. Glenn2,4 1Warnell School of Forestry and Natural Resources, University of Georgia, Athens, GA 30602, USA 2Department of Environmental Health Science, University of Georgia, Athens, GA 30602, USA 3Savannah River Ecology Laboratory, University of Georgia, Drawer E, Aiken, SC 29802, USA 4Georgia Genomics

  5. Effingham County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Climate Zone Number 2 Climate Zone Subtype A. Places in Effingham County, Georgia Guyton, Georgia Rincon, Georgia Springfield, Georgia Retrieved from "http:en.openei.orgw...

  6. Glascock County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Zone Subtype A. Places in Glascock County, Georgia Edge Hill, Georgia Gibson, Georgia Mitchell, Georgia Retrieved from "http:en.openei.orgwindex.php?titleGlascockCounty,Geor...

  7. Jones County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    in Jones County, Georgia Alterra Bioenergy LLC Places in Jones County, Georgia Gray, Georgia Macon, Georgia Retrieved from "http:en.openei.orgwindex.php?titleJonesCo...

  8. Butts County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Number 3 Climate Zone Subtype A. Places in Butts County, Georgia Flovilla, Georgia Jackson, Georgia Jenkinsburg, Georgia Retrieved from "http:en.openei.orgw...

  9. Whitfield County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Zone Subtype A. Registered Energy Companies in Whitfield County, Georgia Wilson and Dalton Places in Whitfield County, Georgia Cohutta, Georgia Dalton, Georgia Tunnel Hill,...

  10. Pickens County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Number 4 Climate Zone Subtype A. Places in Pickens County, Georgia Jasper, Georgia Nelson, Georgia Talking Rock, Georgia Retrieved from "http:en.openei.orgw...

  11. Wayne County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Zone Number 2 Climate Zone Subtype A. Places in Wayne County, Georgia Jesup, Georgia Odum, Georgia Screven, Georgia Retrieved from "http:en.openei.orgwindex.php?titleWayne...

  12. SREL Reprint #3082

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    2 Isolation and characterization of microsatellite loci in the Guanacaste tree, Enterolobium cyclocarpum MAUREEN B. PETERS1, CRIS HAGEN1, DORSET W. TRAPNELL2, J. L. HAMRICK3, OSCAR ROCHA4, PETER E. SMOUSE5, and TRAVIS C. GLENN1 1Savannah River Ecology Laboratory, University of Georgia, PO Drawer E, Aiken, SC 29802, USA 2Institute of Ecology, University of Georgia, Athens, GA 30602, USA 3Department of Plant Biology, University of Georgia, Athens, GA 30602, USA 4Department of Biological Sciences,

  13. Georgia/Incentives | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Local Loan Program Yes Atlanta Gas Light - Energy Efficiency Incentive Program (Georgia) Utility Rebate Program No Biomass Sales and Use Tax Exemption (Georgia) Sales Tax...

  14. Marietta, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Act Smart Grid Projects in Marietta, Georgia Cobb Electric Membership Corporation Smart Grid Project Registered Energy Companies in Marietta, Georgia Atlanta Chemical...

  15. Georgia Regions | U.S. DOE Office of Science (SC)

    Office of Science (SC)

    state, county, city, or district. For more information, please visit the Middle School Coach page. Georgia Region Middle School Regional Georgia Georgia Regional Middle School...

  16. Marion County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Climate Zone Number 3 Climate Zone Subtype A. Places in Marion County, Georgia Buena Vista, Georgia Retrieved from "http:en.openei.orgwindex.php?titleMarionCounty,Georgia...

  17. Sumter County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Number 3 Climate Zone Subtype A. Registered Energy Companies in Sumter County, Georgia Habitat for Humanity Places in Sumter County, Georgia Americus, Georgia Andersonville,...

  18. Georgia's 8th congressional district: Energy Resources | Open...

    OpenEI (Open Energy Information) [EERE & EIA]

    Georgia. Registered Energy Companies in Georgia's 8th congressional district Alterra Bioenergy Alterra Bioenergy LLC Biomass Energy Services Inc Middle Georgia Biofuels Retrieved...

  19. Towns County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Number 4 Climate Zone Subtype A. Places in Towns County, Georgia Hiawassee, Georgia Young Harris, Georgia Retrieved from "http:en.openei.orgwindex.php?titleTownsCounty,G...

  20. Bryan County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Number 2 Climate Zone Subtype A. Places in Bryan County, Georgia Pembroke, Georgia Richmond Hill, Georgia Retrieved from "http:en.openei.orgwindex.php?titleBryanCounty,Ge...

  1. US SoAtl GA Site Consumption

    Energy Information Administration (EIA) (indexed site)

    GA Site Consumption million Btu $0 $500 $1,000 $1,500 $2,000 $2,500 US SoAtl GA Expenditures dollars ALL ENERGY average per household (excl. transportation) 0 4,000 8,000 12,000 16,000 US SoAtl GA Site Consumption kilowatthours $0 $300 $600 $900 $1,200 $1,500 $1,800 US SoAtl GA Expenditures dollars ELECTRICITY ONLY average per household * Site energy consumption (89.5 million Btu) and energy expenditures per household ($2,067) in Georgia are similar to the U.S. household averages. * Per

  2. Georgia Shore Assistance Act

    SciTech Connect

    Pendergrast, C.

    1984-01-01

    The Georgia General Assembly passed the Shore Assistance Act in 1979 in order to fill a regulatory gap in the state's management of its coastal resources. A review of its legislative history, purposes, applications, and effects in terms of the sand sharing system of sand dunes, beaches, sandbars, and shoals concludes that the Act is poorly drafted. In its application on the oceanfront, it betrays its intent and protects the oceanfront owner. It has failed to satisfy the requirements of the public trust in the tidal foreshore. Amendments to clarify its understanding of the functions and values of the sand-sharing system should also conform with the state's duties under the public trust. 139 references.

  3. Georgia Nuclear Profile - Power Plants

    Energy Information Administration (EIA) (indexed site)

    nuclear power plants, summer capacity and net generation, 2010" "Plant nametotal ...,302","19,610",58.5,"Georgia Power Co" "2 Plants 4 Reactors","4,061","33,512",100.0 "Note: ...

  4. Georgia Power | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    An investor-owned utility that serves 2.25m customers in 155 counties of Georgia, USA. Coordinates: 33.748315, -84.391109 Show Map Loading map... "minzoom":false,"mappi...

  5. Georgia Power- Solar Buyback Program

    Energy.gov [DOE]

    Georgia Power, the state's largest utility, has established a green power program, that allows the company to purchase limited solar generation at a premium price based on other customers volunta...

  6. Georgia Power- Advanced Solar Initiative

    Energy.gov [DOE]

    Note: According to Georgia Power's website, the Advanced Solar Initiative's final program guidelines are due to be published on June 25th and the bidding period for is expected to open on July 10,...

  7. File:USDA-CE-Production-GIFmaps-GA.pdf | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    GA.pdf Jump to: navigation, search File File history File usage Georgia Ethanol Plant Locations Size of this preview: 776 600 pixels. Full resolution (1,650 1,275 pixels,...

  8. Thermophilic lignocellulose deconstruction (Journal Article)...

    Office of Scientific and Technical Information (OSTI)

    North Carolina State University ORNL University of Georgia, Athens, GA Publication Date: 2013-01-01 OSTI Identifier: 1116489 DOE Contract Number: DE-AC05-00OR22725 Resource Type: ...

  9. SREL Reprint #3112

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    University of Georgia, Athens, GA 30602, USA 3Canadian Wildlife Service, 300-2365 Albert Street, Regina, Saskatchewan, Canada S4P 4K1 4Department of Biology, University of...

  10. SREL Reprint #3169

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    of Georgia, Athens, GA 30602, USA 2Department of Biological Sciences, University of New Hampshire, 46 College Road, Durham, NH 03824, USA 3Warnell School of Forestry and Natural ...

  11. Adrian, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    is a stub. You can help OpenEI by expanding it. Adrian is a city in Emanuel County and Johnson County, Georgia. It falls under Georgia's 12th congressional district.12...

  12. Camilla, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Map This article is a stub. You can help OpenEI by expanding it. Camilla is a city in Mitchell County, Georgia. It falls under Georgia's 2nd congressional district.12...

  13. Rome, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Hide Map This article is a stub. You can help OpenEI by expanding it. Rome is a city in Floyd County, Georgia. It falls under Georgia's 11st congressional district.12...

  14. Chatsworth, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    This article is a stub. You can help OpenEI by expanding it. Chatsworth is a city in Murray County, Georgia. It falls under Georgia's 9th congressional district.12 Registered...

  15. Alamo, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Map This article is a stub. You can help OpenEI by expanding it. Alamo is a town in Wheeler County, Georgia. It falls under Georgia's 1st congressional district.12...

  16. Georgia Transmission Corp | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Corp Jump to: navigation, search Name: Georgia Transmission Corp Place: Georgia References: EIA Form EIA-861 Final Data File for 2010 - File1a1 EIA Form 861 Data Utility Id 7197...

  17. Ailey, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Map This article is a stub. You can help OpenEI by expanding it. Ailey is a city in Montgomery County, Georgia. It falls under Georgia's 12th congressional district.12...

  18. Georgia Nonprofit Helps Homeowners Save Energy

    Energy.gov [DOE]

    Residents in Georgia are living in more comfortable and energy-efficient homes because of this Savannah based weatherization program.

  19. SREL Reprint #3276

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    6 The Efficacy of Intranasal Administration of Dexmedetomidine and Ketamine to Yellow-Bellied Sliders (Trachemys scripta scripta) Rodney W. Schnellbacher1, Sonia M. Hernandez2,3, Tracey D. Tuberville4, Joerg Mayer1, Yahya Alhamhoom5, and Robert D. Arnold6 1Zoological Medicine, Department of Small Animal Medicine and Surgery, College of Veterinary Medicine, University of Georgia, Athens, GA 30602, USA 2Daniel B. Warnell School of Forestry and Natural Resources University of Georgia, Athens, GA

  20. Georgia Nuclear Profile - Power Plants

    Energy Information Administration (EIA) (indexed site)

    nuclear power plants, summer capacity and net generation, 2010" "Plant name/total reactors","Summer capacity (mw)","Net generation (thousand mwh)","Share of State nuclear net generation (percent)","Owner" "Edwin I Hatch Unit 1, Unit 2","1,759","13,902",41.5,"Georgia Power Co" "Vogtle Unit 1, Unit 2","2,302","19,610",58.5,"Georgia Power Co" "2 Plants 4

  1. Lighting Up Georgia Convenience Stores

    Office of Energy Efficiency and Renewable Energy (EERE)

    Thanks to help from the Energy Department, convenience stores across Georgia are saving energy by switching to energy efficient lighting. In the first year alone, participating small businesses have saved over $7,000 after the retrofits and over 54,000 KWh of energy.

  2. SREL Reprint #3172

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    2 Development and characterization of 18 microsatellite loci for the Southern Leopard Frog, Rana sphenocephala Anna M. McKee1, Stacey L. Lance2, Kenneth L. Jones3, Cris Hagen2, and Travis C. Glenn3,4 1Warnell School of Forestry and Natural Resources, University of Georgia, Athens, GA 30602, USA 2Savannah River Ecology Laboratory, University of Georgia, Drawer E, Aiken, SC 29802, USA 3Georgia Genomics Facility, University of Georgia, Athens, GA 30602, USA 4Department of Environmental Health

  3. Bacon County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    169-2006 Climate Zone Number 2 Climate Zone Subtype A. Places in Bacon County, Georgia Alma, Georgia Retrieved from "http:en.openei.orgwindex.php?titleBaconCounty,Georgia&o...

  4. McDuffie County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Number 3 Climate Zone Subtype A. Places in McDuffie County, Georgia Dearing, Georgia Thomson, Georgia Retrieved from "http:en.openei.orgwindex.php?titleMcDuffieCounty,Geor...

  5. Recovery Act State Memos Georgia

    Energy.gov [DOE] (indexed site)

    Georgia For questions about DOE's Recovery Act activities, please contact the DOE Recovery Act Clearinghouse: 1-888-DOE-RCVY (888-363-7289), Monday through Friday, 9 a.m. to 7 p.m. Eastern Time https://recoveryclearinghouse.energy.gov/contactUs.htm. All numbers and projects listed as of June 1, 2010 TABLE OF CONTENTS RECOVERY ACT SNAPSHOT................................................................................... 1 FUNDING ALLOCATION

  6. Americus, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    2nd congressional district.12 Registered Energy Companies in Americus, Georgia Habitat for Humanity References US Census Bureau Incorporated place and minor civil...

  7. ,"Georgia Natural Gas LNG Storage Withdrawals (MMcf)"

    Energy Information Administration (EIA) (indexed site)

    Of Series","Frequency","Latest Data for" ,"Data 1","Georgia Natural Gas LNG Storage Withdrawals (MMcf)",1,"Annual",2014 ,"Release Date:","9302015" ,"Next Release...

  8. ,"Georgia Natural Gas LNG Storage Additions (MMcf)"

    Energy Information Administration (EIA) (indexed site)

    Of Series","Frequency","Latest Data for" ,"Data 1","Georgia Natural Gas LNG Storage Additions (MMcf)",1,"Annual",2014 ,"Release Date:","9302015" ,"Next Release...

  9. GEORGIA RECOVERY ACT SNAPSHOT | Department of Energy

    Energy.gov [DOE] (indexed site)

    Georgia has substantial natural resources, including biomass and hydroelectric power .The American Recovery & Reinvestment Act (ARRA) is making a meaningful down payment on the ...

  10. Georgia Power- Small Commercial Energy Efficiency Program

    Energy.gov [DOE]

    Georgia Power offers Small Commercial rebates to customers on qualifying rates. See program web site for additional details including eligibility information.

  11. Chattahoochee Hill Country, Georgia: Energy Resources | Open...

    OpenEI (Open Energy Information) [EERE & EIA]

    Hill Country, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 31.721548, -83.2599068 Show Map Loading map... "minzoom":false,"mappings...

  12. Georgia (country): Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Country Profile Name Georgia Population Unavailable GDP Unavailable Energy Consumption 0.17 Quadrillion Btu 2-letter ISO code GE 3-letter ISO code GEO Numeric ISO...

  13. Atlanta, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Solarity Sustainable World Capital TCE Energy Corporation Waspa Wheego Electric Cars Energy Incentives for Atlanta, Georgia City of Atlanta - Sustainable Home Initiative in...

  14. Georgia/Wind Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Guidebook >> Georgia Wind Resources WindTurbine-icon.png Small Wind Guidebook * Introduction * First, How Can I Make My Home More Energy Efficient? * Is Wind Energy Practical...

  15. Atkinson County, Georgia ASHRAE 169-2006 Climate Zone | Open...

    OpenEI (Open Energy Information) [EERE & EIA]

    Atkinson County, Georgia ASHRAE 169-2006 Climate Zone Jump to: navigation, search County Climate Zone Place Atkinson County, Georgia ASHRAE Standard ASHRAE 169-2006 Climate Zone...

  16. City of Hogansville, Georgia (Utility Company) | Open Energy...

    OpenEI (Open Energy Information) [EERE & EIA]

    search Name: Hogansville City of Place: Georgia Website: www.cityofhogansville.org Facebook: https:www.facebook.comhogansville.georgia Outage Hotline: 706.637.6648...

  17. Georgia Tech School of Civil and Environmental Engineering |...

    OpenEI (Open Energy Information) [EERE & EIA]

    School of Civil and Environmental Engineering Jump to: navigation, search Name: Georgia Tech School of Civil and Environmental Engineering Abbreviation: Georgia Tech School of CEE...

  18. Secretary Bodman Touts Importance of Cellulosic Ethanol at Georgia...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Secretary Bodman Touts Importance of Cellulosic Ethanol at Georgia Biorefinery Groundbreaking Secretary Bodman Touts Importance of Cellulosic Ethanol at Georgia Biorefinery...

  19. Sec. Moniz to Georgia, Energy Department Scheduled to Close on...

    Energy Saver

    Georgia, Energy Department Scheduled to Close on Loan Guarantees to Construct New Nuclear Power Plant Reactors Sec. Moniz to Georgia, Energy Department Scheduled to Close on Loan ...

  20. City of Jackson, Georgia (Utility Company) | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Jackson, Georgia (Utility Company) Jump to: navigation, search Name: Jackson City of Place: Georgia Phone Number: 770-775-3858 Website: www.cityofjacksonga.com196El Facebook:...

  1. City of Oxford, Georgia (Utility Company) | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Oxford, Georgia (Utility Company) Jump to: navigation, search Name: Oxford City of Place: Georgia Phone Number: 770-786-7004 Website: www.oxfordgeorgia.org Outage Hotline:...

  2. Georgia Tech Center for Innovative Fuel Cell and Battery Technologies...

    OpenEI (Open Energy Information) [EERE & EIA]

    Innovative Fuel Cell and Battery Technologies Jump to: navigation, search Name: Georgia Tech Center for Innovative Fuel Cell and Battery Technologies Place: Georgia Product: The...

  3. Hancock County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Climate Zone Number 3 Climate Zone Subtype A. Places in Hancock County, Georgia Sparta, Georgia Retrieved from "http:en.openei.orgwindex.php?titleHancockCounty,Georgi...

  4. City of Adel, Georgia (Utility Company) | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Georgia (Utility Company) Jump to: navigation, search Name: City of Adel Place: Georgia Phone Number: (229) 896-3601 Website: www.cityofadel.usdepartments Outage Hotline: (229)...

  5. City of Lawrenceville, Georgia (Utility Company) | Open Energy...

    OpenEI (Open Energy Information) [EERE & EIA]

    Georgia (Utility Company) Jump to: navigation, search Name: City of Lawrenceville Place: Georgia Phone Number: 770.963.2414 Website: www.lawrencevillega.orggovern Outage Hotline:...

  6. Secretary Bodman Touts Importance of Cellulosic Ethanol at Georgia...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Touts Importance of Cellulosic Ethanol at Georgia Biorefinery Groundbreaking Secretary Bodman Touts Importance of Cellulosic Ethanol at Georgia Biorefinery Groundbreaking October ...

  7. Georgia and Arkansas Residential Energy Code Field Studies |...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Georgia and Arkansas Residential Energy Code Field Studies Georgia and Arkansas Residential Energy Code Field Studies Lead Performer: Southeast Energy Efficiency Alliance - ...

  8. Alternative Fuels Data Center: Georgia Transportation Data for Alternative

    Alternative Fuels and Advanced Vehicles Data Center

    Fuels and Vehicles Georgia Transportation Data for Alternative Fuels and Vehicles to someone by E-mail Share Alternative Fuels Data Center: Georgia Transportation Data for Alternative Fuels and Vehicles on Facebook Tweet about Alternative Fuels Data Center: Georgia Transportation Data for Alternative Fuels and Vehicles on Twitter Bookmark Alternative Fuels Data Center: Georgia Transportation Data for Alternative Fuels and Vehicles on Google Bookmark Alternative Fuels Data Center: Georgia

  9. SEP Success Story: Lighting Up Georgia Convenience Stores | Department of

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Energy Lighting Up Georgia Convenience Stores SEP Success Story: Lighting Up Georgia Convenience Stores March 28, 2012 - 2:23pm Addthis One of several Georgia convenience stores that improved lighting while saving energy and money. | Courtesy of Outlaw Consulting, Inc. One of several Georgia convenience stores that improved lighting while saving energy and money. | Courtesy of Outlaw Consulting, Inc. Convenience stores across Georgia are saving energy thanks to energy efficient lighting

  10. SREL Reprint #3115

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    5 Genetic relationships of meadow vole (Microtus pennsylvanicus) populations in central Appalachian wetlands K.E. Francl1, T.C. Glenn2,3, S.B. Castleberry4, and W.M. Ford5 1Department of Biology, Radford University, Box 6931, Radford, VA 24142, USA 2Environmental Health Sciences, University of Georgia, Athens, GA 30602, USA 3Savannah River Ecology Laboratory, University of Georgia, Aiken, SC 29802, USA 4Warnell School of Forestry and Natural Resources, University of Georgia, Athens, GA

  11. Milton, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Hide Map This article is a stub. You can help OpenEI by expanding it. Milton is a city in Fulton County, Georgia.1 References US Census Bureau Incorporated...

  12. Fossil Energy | National Energy Technology Laboratory | Georgia...

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Engineering and an adjunct professor in the College of Computing and the Ernest J. Scheller College of Business. He served as a Vice President and Director of the Georgia Tech...

  13. Georgia Natural Gas Underground Storage Withdrawals (Million...

    Energy Information Administration (EIA) (indexed site)

    Withdrawals (Million Cubic Feet) Georgia Natural Gas Underground Storage Withdrawals (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8...

  14. Central Georgia EMC- Photovoltaic Rebate Program

    Office of Energy Efficiency and Renewable Energy (EERE)

    In June 2008, Central Georgia Electric Membership Corporation (CGEMC) began offering a rebate of $450 per kilowatt (kW) to residential members who install photovoltaic (PV) systems that are...

  15. Georgia Power- Energy Efficiency Home Improvement Rebates

    Energy.gov [DOE]

    Georgia Power offers up to $2,575 in rebates to customers who choose to improve home performance with whole building BPI certified efficiency measures or up to $700 for individual improvements from...

  16. Clean Cities: Clean Cities-Georgia

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Atlanta was designated as the first Clean Cities coalition in the nation at the Georgia Dome in 1993. Prior to being elected as the coalition's executive director, Francis served...

  17. Water-supply potential of the Upper Floridan aquifer in the vicinity of Savannah, Georgia

    SciTech Connect

    Garza, R.; Krause, R.E. )

    1993-03-01

    The Upper Floridan aquifer is the primary source of freshwater in coastal Georgia. Groundwater withdrawal in the area of Savannah and in the adjacent coastal areas in Georgia and South Carolina has resulted in large regional water-level declines and a reversal of the hydraulic gradient that existed prior to development. Changes in gradient and decreasing water levels are causing lateral encroachment of seawater into the Upper Floridan aquifer at the northern end of Hilton Head Island, SC, and vertical intrusion of saltwater into the Upper and Lower Floridan aquifers in the Brunswick, GA., area. Concerns about future water-supply demands prompted the US Geological Survey and the Chatham County-Savannah Metropolitan Planning Commission to undertake a cooperative study to evaluate the ground-water resources in the Savannah, GA, area. A numerical ground-water flow model was developed and used in conjunction with other previously calibrated models in the coastal areas of Georgia and South Carolina to simulate the effects of additional ground-water withdrawal on water levels. Based on model simulations and the constraint of preventing additional water-level declines at the locations of encroachment and intrusion, the potential of the Upper Floridan aquifer to supply additional water in the Savannah area is limited under present hydrologic conditions. The potential for additional withdrawal in the vicinity of Savannah, GA, ranges from less than 1 million gallons per day (Mgal/d) to about 5 Mgal/d. Because of the limited water-supply potential, hypothetical alternatives of ground-water withdrawal were simulated to determine the effects on water levels. These simulations indicate that reduction and redistribution of ground-water withdrawal would not adversely affect water levels at the locations of encroachment and intrusion.

  18. CONSENT-BASED SITING PUBLIC MEETING Georgia Tech Hotel and Conference Center

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Georgia Tech Hotel and Conference Center 800 Spring Street N.W. Atlanta, GA 30308 April 11, 2016 FULL TRANSCRIPT Mr. Jim Hamilton. Good afternoon, and to those in earlier time zones via webinar, good morning. Welcome, and thank you all for being here today. My name is Jim Hamilton. I'm an advisor to the Department of Energy's Consent-Based Siting Team, and my role today is to help us all have an open and productive conversation. To start off we have a few housekeeping issues to go over, and I'll

  19. ,"Georgia Natural Gas Underground Storage Withdrawals (MMcf)"

    Energy Information Administration (EIA) (indexed site)

    Withdrawals (MMcf)" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","Georgia Natural Gas Underground Storage Withdrawals (MMcf)",1,"Annual",1975 ,"Release Date:","10/31/2016" ,"Next Release Date:","11/30/2016" ,"Excel File Name:","n5060ga2a.xls"

  20. Georgia's 2nd congressional district: Energy Resources | Open...

    OpenEI (Open Energy Information) [EERE & EIA]

    Energy Companies in Georgia's 2nd congressional district First United Ethanol LLC Habitat for Humanity Retrieved from "http:en.openei.orgwindex.php?titleGeorgia%27s2ndc...

  1. Middle Georgia El Member Corp | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    El Member Corp Place: Georgia Phone Number: 1-800-342-0144 Website: www.mgemc.com Facebook: https:www.facebook.comMiddleGeorgiaEMC Outage Hotline: 229-268-2671; 800-342-0144...

  2. Central Georgia El Member Corp | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Central Georgia El Member Corp Place: Georgia Phone Number: 770-775-7857 Website: www.cgemc.com Twitter: @CentralGAEMC Outage Hotline: 770-775-7857 References: EIA Form EIA-861...

  3. Pine Mountain, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    article is a stub. You can help OpenEI by expanding it. Pine Mountain is a town in Harris County and Meriwether County, Georgia. It falls under Georgia's 3rd congressional...

  4. Ben Hill County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Climate Zone Number 3 Climate Zone Subtype A. Places in Ben Hill County, Georgia Fitzgerald, Georgia Retrieved from "http:en.openei.orgwindex.php?titleBenHillCounty,Geo...

  5. North Georgia Elec Member Corp | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    navigation, search Name: North Georgia Elec Member Corp Place: Georgia Phone Number: Dalton: (706) 259-9441; Fort Oglethorpe: (706) 866-2231; Calhoun: (706) 629-3160; Trion:...

  6. City of Commerce, Georgia (Utility Company) | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    City of Commerce, Georgia (Utility Company) Jump to: navigation, search Name: City of Commerce Place: Georgia Phone Number: (706) 335-4200 Website: www.commercega.orgContentDef...

  7. McCaysville, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Act Smart Grid Projects in McCaysville, Georgia Tri State Electric Membership Corporation Smart Grid Project Utility Companies in McCaysville, Georgia Tri-State Electric Member...

  8. Alternative Fuels Data Center: Georgia Sets the Pace for Plug...

    Alternative Fuels and Advanced Vehicles Data Center

    Georgia Sets the Pace for Plug-In Electric Vehicles Updated February 3, 2015 Photo of electric vehicle Georgia ZEV Tax Credit Eligible Battery Electric Vehicles BMW i3 Fiat 500e ...

  9. College Park, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Hide Map This article is a stub. You can help OpenEI by expanding it. College Park is a city in Clayton County and Fulton County, Georgia. It falls under Georgia's 5th...

  10. 2014 Race to Zero Student Design Competition: Georgia Institute of

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Technology Profile | Department of Energy Georgia Institute of Technology Profile 2014 Race to Zero Student Design Competition: Georgia Institute of Technology Profile 2014 Race to Zero Student Design Competition: Georgia Institute of Technology Profile, from the U.S. Department of Energy. rtz_georgia_profile.pdf (4.02 MB) More Documents & Publications 2014 Race to Zero Student Design Competition: Auburn University Profile 2014 Race to Zero Student Design Competition: University of

  11. Georgia Renewable Electric Power Industry Net Summer Capacity...

    Energy Information Administration (EIA) (indexed site)

    Georgia" "Energy Source",2006,2007,2008,2009,2010 "Geothermal","-","-","-","-","-" "Hydro Conventional",2027,2032,2041,2046,2052 "Solar","-","-","-","-","-" "Wind","-","-","-","-",...

  12. Georgia Renewable Electric Power Industry Net Generation, by...

    Energy Information Administration (EIA) (indexed site)

    Georgia" "Energy Source",2006,2007,2008,2009,2010 "Geothermal","-","-","-","-","-" "Hydro Conventional",2569,2236,2145,3260,3322 "Solar","-","-","-","-","-" "Wind","-","-","-","-",...

  13. Georgia Recovery Act State Memo | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Georgia Recovery Act State Memo Georgia Recovery Act State Memo Georgia has substantial natural resources, including biomass and hydroelectric power. The American Recovery & Reinvestment Act (ARRA) is making a meaningful down payment on the nation's energy and environmental future. The Recovery Act investments in Georgia are supporting a broad range of clean energy projects, from energy efficiency and the smart grid to environmental cleanup and alternative fuels and vehicles. Through these

  14. Categorical Exclusion Determination (Georgia-Alabama-SouthCarolina System)

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    | Department of Energy Categorical Exclusion Determination (Georgia-Alabama-SouthCarolina System) Categorical Exclusion Determination (Georgia-Alabama-SouthCarolina System) Proposed rate adjustment for the Georgia-Alabama-South Carolina System of Projects (253.36 KB) More Documents & Publications CX-001068: Categorical Exclusion Determination SOCO-4-E Wholesale Power Rate Schedule Regulation-1

  15. SREL Reprint #3157

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    7 Development and characterization of twelve polymorphic microsatellite loci in the Bog Copper, Lycaena epixanthe Sarah P. Flanagan1, W. Herbert Wilson1, Kenneth L. Jones2, and Stacey L. Lance3 1Department of Biology, Colby College, Waterville, ME 04901, USA 2Georgia Genomics Facility, University of Georgia, Athens, GA 30602, USA 3Savannah River Ecology Laboratory, University of Georgia, Drawer E, Aiken, SC 29802, USA Abstract: We isolated and characterized 12 microsatellite loci from the Bog

  16. SREL Reprint #3171

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    1 Development and characterization of ten polymorphic microsatellite loci in the yellowtail flounder (Limanda ferruginea) Jonathan S. Breton1, Kenneth Oliveira1, Robert E. Drew1, Kenneth L. Jones2, Cris Hagen3, and Stacey Lance3 1Biology Department, University of Massachusetts Dartmouth, 285 Old Westport Road, North Dartmouth, MA 02747-2300, USA 2Georgia Genomics Facility, University of Georgia, Athens, GA 30602, USA 3Savannah River Ecology Laboratory, University of Georgia, Aiken, SC 29802, USA

  17. SREL Reprint #3278

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    8 Avifauna in Maritime Forest and Shrub Habitats on Navy Submarine Base Kings Bay in Southeastern Georgia Larry Bryan1, Chris Depkin1, Paul Schoenfeld2, and Susan Wilde3 1Savannah River Ecology Laboratory, Aiken, SC 29802 2NAVFAC Southeast, Navy Submarine Base, Kings Bay, GA 31547 3D. B. Warnell School of Forestry and Natural Resources, University of Georgia, Athens, GA 30602 Introduction: The diverse habitats of the South Atlantic and Gulf coastal regions, including various forest and shrub

  18. EA-1963: Elba Liquefaction Project, Savannah, Georgia

    Office of Energy Efficiency and Renewable Energy (EERE)

    The Federal Energy Regulatory Commission (FERC) is preparing, with DOE as a cooperating agency, an EA to analyze the potential environmental impacts of a proposal to add natural gas liquefaction and export capabilities at the existing Elba Liquefied Natural Gas Terminal near Savannah, Georgia. Additional information is available at FERCs eLibrary website, elibrary.ferc.gov/idmws/docket_search.asp; search for docket number PF13-3.

  19. Atkinson County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Atkinson County, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 31.2932161, -82.8640623 Show Map Loading map... "minzoom":false,"mapp...

  20. Georgia's 6th congressional district: Energy Resources | Open...

    OpenEI (Open Energy Information) [EERE & EIA]

    Grid Project Registered Energy Companies in Georgia's 6th congressional district Atlanta Chemical Engineering LLC Cellnet Legacy Environmental Solutions Prenova Inc formerly...

  1. Georgia's 11th congressional district: Energy Resources | Open...

    OpenEI (Open Energy Information) [EERE & EIA]

    Grid Project Registered Energy Companies in Georgia's 11th congressional district Atlanta Chemical Engineering LLC Prenova Inc formerly Service Resources Inc Sriya Innovations Inc...

  2. Georgia's 13th congressional district: Energy Resources | Open...

    OpenEI (Open Energy Information) [EERE & EIA]

    Grid Project Registered Energy Companies in Georgia's 13th congressional district Atlanta Chemical Engineering LLC Prenova Inc formerly Service Resources Inc Sriya Innovations Inc...

  3. Cobb County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Smart Grid Project Registered Energy Companies in Cobb County, Georgia Atlanta Chemical Engineering LLC H I Solutions Inc Prenova Inc formerly Service Resources Inc...

  4. City of Mansfield, Georgia (Utility Company) | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    search Name: City of Mansfield Place: Georgia Website: www.mansfieldga.comutilities. Facebook: https:www.facebook.commansfieldga Outage Hotline: 770-710-8235 References: EIA...

  5. EA-1963: Elba Liquefaction Project, Savannah, Georgia | Department...

    Energy.gov [DOE] (indexed site)

    Gas Terminal near Savannah, Georgia. Additional information is available at FERC's eLibrary website, elibrary.ferc.govidmwsdocketsearch.asp; search for docket number PF13-3....

  6. Building America Case Study: Savannah Gardens, Savannah, Georgia...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Savannah Gardens Savannah, Georgia PROJECT INFORMATION Construction: New home Type: Single-family, affordable Partners: Savannah Housing Department Chatham Home Builders Southface ...

  7. Georgia-UNEP Risoe Technology Needs Assessment Program | Open...

    OpenEI (Open Energy Information) [EERE & EIA]

    UNEP Risoe Technology Needs Assessment Program Jump to: navigation, search Name Georgia-UNEP Risoe-Technology Needs Assessment Program AgencyCompany Organization UNEP-Risoe...

  8. Clay County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 31.6447931, -85.0025539 Show Map Loading map... "minzoom":false,"mappingservice":"goog...

  9. Irwin County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Irwin County, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 31.5893221, -83.2934086 Show Map Loading map... "minzoom":false,"mapping...

  10. Sandy Springs, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Springs, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 33.9242688, -84.3785379 Show Map Loading map... "minzoom":false,"mappingservi...

  11. Polk County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Polk County, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 34.0132398, -85.1479364 Show Map Loading map... "minzoom":false,"mappings...

  12. Pierce County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Pierce County, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 31.343806, -82.1713632 Show Map Loading map... "minzoom":false,"mapping...

  13. Washington County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Washington County, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 32.962702, -82.820974 Show Map Loading map... "minzoom":false,"mapp...

  14. Georgia Natural Gas Imports Price All Countries (Dollars per...

    Annual Energy Outlook

    Price All Countries (Dollars per Thousand Cubic Feet) Georgia Natural Gas Imports Price ... Release Date: 4292016 Next Release Date: 5312016 Referring Pages: Natural Gas Imports ...

  15. Georgia Department of Natural Resources (GDNR) | Open Energy...

    OpenEI (Open Energy Information) [EERE & EIA]

    References Retrieved from "http:en.openei.orgwindex.php?titleGeorgiaDepartmentofNaturalResources(GDNR)&oldid765343" Categories: Organizations Oil and Gas State Oil and...

  16. Georgia Natural Gas Underground Storage Net Withdrawals All Operators...

    Energy Information Administration (EIA) (indexed site)

    Net Withdrawals All Operators (Million Cubic Feet) Georgia Natural Gas Underground Storage Net Withdrawals All Operators (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3...

  17. Barrow County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Barrow County, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 34.0142667, -83.6986568 Show Map Loading map... "minzoom":false,"mappin...

  18. Georgia's 9th congressional district: Energy Resources | Open...

    OpenEI (Open Energy Information) [EERE & EIA]

    Resource Solutions ECO Solutions LLC Greenleaf Environmental Solutions Wilson and Dalton Utility Companies in Georgia's 9th congressional district Tri-State Electric Member...

  19. Georgia-World Bank Climate Projects | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Projects Jump to: navigation, search Name Georgia-World Bank Climate Projects AgencyCompany Organization World Bank Focus Area Renewable Energy, Hydro Topics Background analysis...

  20. Stone Mountain, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Stone Mountain, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 33.8081608, -84.170196 Show Map Loading map... "minzoom":false,"mappin...

  1. Energy Secretary to Visit Georgia Nuclear Reactor Site and Tennessee...

    Energy.gov [DOE] (indexed site)

    Waynesboro, Georgia, and Oak Ridge National Laboratory on Wednesday, February 15 to highlight steps the Obama Administration is taking to restart America's nuclear energy industry. ...

  2. Sakis Meliopoulos, Georgia Institute of Technology, PSERC webinar...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Professor School of Electrical and Computer Engineering Georgia Institute of ... and ElectroMagnetic Interference) computer code, and the mGrid computer code - a ...

  3. Hall County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Hall County, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 34.30778, -83.804868 Show Map Loading map... "minzoom":false,"mappingserv...

  4. EECBG Success Story: Georgia County Turning Industrial and Farm...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Georgia County Turning Industrial and Farm Waste Into Big Energy Savings EECBG Success ... Learn more. Addthis Related Articles EECBG Success Story: County Aims to Save with ...

  5. Georgia's 4th congressional district: Energy Resources | Open...

    OpenEI (Open Energy Information) [EERE & EIA]

    Vega Biofuels Inc formerly Vega Promotional Systems Retrieved from "http:en.openei.orgwindex.php?titleGeorgia%27s4thcongressionaldistrict&oldid1854...

  6. Georgia Green Loans Save & Sustain Program | Department of Energy

    Energy.gov [DOE] (indexed site)

    technologies not identified Program Info Sector Name Non-Profit Administrator Georgia Green Loans Website http:www.georgiagreenloans.org Funding Source U.S. Small Business...

  7. sorbent-georgia-tech | netl.doe.gov

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Rapid Temperature Swing Adsorption Using PolymerSupported Amine Composite Hollow Fibers Project No.: DE-FE0007804 Georgia Tech Research Corporation is developing, fabricating, and...

  8. Mountain Park, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Park, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 33.8442715, -84.1293605 Show Map Loading map... "minzoom":false,"mappingservice"...

  9. Gresham Park, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Gresham Park, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 33.7034405, -84.3143682 Show Map Loading map... "minzoom":false,"mapping...

  10. Belvedere Park, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Belvedere Park, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 32.4606984, -84.9040969 Show Map Loading map... "minzoom":false,"mappi...

  11. Dawson County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Dawson County, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 34.412912, -84.1435136 Show Map Loading map... "minzoom":false,"mapping...

  12. Environmental radionuclide distribution in Georgia after the Chernobyl accident

    SciTech Connect

    Mosulishvili, L.M.; Shoniya, N.I.; Katamadze, N.M.

    1994-01-01

    Atmospheric Chernobyl-released radioactivity, assessed at about 2 x 10{sup 18} Bq, caused global environmental contamination. Contaminated air masses appeared in the Transcaucasian region in early May, 1986. Rains that month promoted intense radionuclide deposition all over Georgia. The contamination level of western Georgia considerably exceeded the contamination level of eastern Georgia. The Black Sea coast of Georgia suffered from the Chernobyl accident as much as did strongly contaminated areas of the Ukraine and Belarus`. Unfortunately, governmental decrees on countermeasures against the consequences of the Chernobyl accident at that time did not even refer to the coast of Georgia. The authors observed the first increase in radioactivity background in rainfall samples collected on May 2, 1986, in Tbilisi. {gamma}-Spectrometric measurements of aerosol filters, vegetation, food stuffs, and other objects, in addition to rainfall, persistently confirmed the occurrence of short-lived radionuclides, including {sup 131}I. At first, this fact seemed unbelievable, because the Chernobyl accident had occurred only 4-5 days earlier and far from Georgia. However, these arguments proved to be faulty. Soon, environmental monitoring of radiation in Georgia became urgent. Environmental radionuclide distribution in Georgia shortly after the Chernobyl accident, as well as the methods of analysis, are reported in this paper.

  13. SREL Reprint #3026

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    6 Twelve year response of old-growth southeastern bottomland hardwood forests to disturbance from Hurricane Hugo Dehai Zhao1, Bruce Allen2, and Rebecca R. Sharitz3 1Warnell School of Forestry and Natural Resources, University of Georgia, Athens, GA 30602, USA 2Department of Natural Resources, Ohio State University, Columbus, OH 43021, USA 3Savannah River Ecology Laboratory, University of Georgia, Drawer E, Aiken, SC 29802, USA Abstract: The influence of wind damage from Hurricane Hugo on

  14. SREL Reprint #3052

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    2 Sexual dichromatism in the marbled salamander, Ambystoma opacum Brian D. Todd1 and Andrew K. Davis2 1Savannah River Ecology Laboratory, The University of Georgia, Aiken, SC 29802, USA 2Warnell School of Forestry and Natural Resources, University of Georgia, Athens, GA 30602, USA Abstract: Reports of sexual dichromatism in salamanders are rare and have been generally restricted to a few species in the families Hynobiidae and Salamandridae. We used image analysis techniques to examine sexual

  15. SREL Reprint #3106

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    6 Ecology of Chicken Turtles (Deirochelys reticularia) in a Seasonal Wetland Ecosystem: Exploiting Resource and Refuge Environments Kurt A. Buhlmann1,2, Justin D. Congdon1, J.Whitfield Gibbons1, and Judith L. Greene1 1University of Georgia, Savannah River Ecology Laboratory, Drawer E, Aiken, SC, 29802 USA 2University of Georgia, Odum School of Ecology, Athens, GA, 30602 USA Abstract: Chicken turtles (Deirochelys reticularia) were studied at Dry Bay, a Carolina bay wetland in South Carolina, USA,

  16. SREL Reprint #3114

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    4 Microsatellite markers isolated from Drosophila hydei Maureen B. Peters1, Cris Hagen1, Brian Snyder2, Travis C. Glenn1,4, and Patricia Adair Gowaty3,5 1Savannah River Ecology Laboratory, University of Georgia, PO Drawer E, Aiken, SC 29802, USA 2Institute of Ecology, University of Georgia, Athens, GA 30602, USA 3Department of Ecology and Evolutionary Biology, University of California, Los Angeles, Los Angeles, CA 90095, USA 4Environmental Health Science, College of Public Health, University of

  17. SREL Reprint #3120

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    0 Fifteen polymorphic microsatellite loci from Jamaican streamertail hummingbirds (Trochilus) Stacey L. Lance1,2, Cris Hagen2, Travis C. Glenn1, Robb T. Brumfield3,4, Katherine Faust Stryjewski3,4, and Gary R. Graves5 1Department of Environmental Health Science, University of Georgia, Athens, GA 30602, USA 2Savannah River Ecology Laboratory, University of Georgia, Drawer E, Aiken, SC 29802, USA 3Museum of Natural Science, Louisiana State University, 119 Foster Hall, Baton Rouge, LA 70803, USA

  18. SREL Reprint #3121

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    1 Fifteen microsatellite loci for the jungle perch, Kuhlia rupestris Maureen B. Peters1, Jennifer R. Ovenden3, Damien Broderick3, Stacey L. Lance1, Cris Hagen1, and Travis C. Glenn2 1Savannah River Ecology Lab, University of Georgia, Drawer E, Aiken, SC 29802, USA 2Department of Environmental Health Science, University of Georgia, Athens, GA 30602, USA 3Molecular Fisheries Laboratory, Queensland Department of Primary Industries and Fisheries, PO Box 6097, St Lucia, Qld 4067, Australia Abstract:

  19. SREL Reprint #3125

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    5 Development and characterization of nineteen polymorphic microsatellite loci from seaside alder, Alnus maritima Stacey L. Lance1,2, Kenneth L. Jones1, Cris Hagen2, Travis C. Glenn1, J. Matthew Jones3, and J. Phil Gibson3,4 1Department of Environmental Health Science, University of Georgia, Athens, GA 30602, USA 2Savannah River Ecology Laboratory, University of Georgia, Drawer E, Aiken, SC 29802, USA 3Department of Botany and Microbiology, University of Oklahoma, Norman, OK 73019, USA

  20. SREL Reprint #3127

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    7 Development and characterization of twelve polymorphic microsatellite loci in the threatened Red Hills salamander, Phaeognathus hubrichti Stacey L. Lance1,2, Cris Hagen2, Travis C. Glenn1, Joseph J. Apodaca3, and Leslie J. Rissler3 1Department of Environmental Health Science, University of Georgia, Athens, GA 30602, USA 2Savannah River Ecology Laboratory, University of Georgia, Drawer E, Aiken, SC 29802, USA 3Department of Biological Sciences, University of Alabama, Tuscaloosa, AL 35487, USA

  1. SREL Reprint #3143

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    3 Bacterial tolerances to metals and antibiotics in metal-contaminated and reference streams Meredith S. Wright1,2, Gretchen Loeffler Peltier2, Ramunas Stepanauskas3, and J Vaun McArthur1 1University of Georgia, Savannah River Ecology Laboratory, Aiken, SC, USA 2University of Georgia, Institute of Ecology, Athens, GA, USA 3Bigelow Laboratory for Ocean Sciences, West Boothbay Harbor, ME, USA Abstract: Anthropogenic-derived sources of selection are typically implicated as mechanisms for

  2. SREL Reprint #3165

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    5 Microsatellites isolated from the North American ground skink (Scincella lateralis) Nathan D. Jackson1, Travis C. Glenn2,3, Cris Hagen2, Stacey L. Lance2, and Christopher C. Austin1 1Museum of Natural Science and Department of Biological Sciences, Louisiana State University, 119 Foster Hall, Baton Rouge, LA 70803, USA 2Savannah River Ecology Laboratory, University of Georgia, P.O. Drawer E, Aiken, SC 29802, USA 3Department of Environmental Health Science, University of Georgia, Athens, GA

  3. SREL Reprint #3170

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    0 Microsatellite markers isolated from the Mexican banded spring snail Mexipyrgus churinceanus Lyndon M. Coghill1, Johel Chaves-Campos1, Flor E. Espinoza1, Stacey L. Lance3, Travis C. Glenn2, and Steven G. Johnson1 1Department of Biological Sciences, University of New Orleans, 2000 Lakeshore Dr, New Orleans, LA 70148, USA 2Department of Environmental Health Science, University of Georgia, Athens, GA 30602, USA 3Savannah River Ecology Laboratory, University of Georgia, Aiken, SC 29802, USA

  4. SREL Reprint #3352

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    2 Hepatic and renal trace element concentrations in American alligators (Alligator mississippiensis) following chronic dietary exposure to coal fly ash contaiminated prey Tracey D. Tuberville1, David E. Scott1, Brian S. Metts1, John W. Finger Jr.1,2, and Matthew T. Hamilton1,3 1Savannah River Ecology Laboratory, University of Georgia, Aiken, SC 29802, USA 2Department of Environmental Health Science, University of Georgia, Athens, GA 30602, USA 3Warnell School of Forestry and Natural Resources,

  5. SREL Reprint #3362

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    2 Spatial and temporal patterns of radiocesium contamination in mosquitofish, Gambusia holbrooki (Girard, 1859), inhabiting a nuclear reactor cooling reservoir Kevin A. Holloman1, Cham E. Dallas1, I. Lehr Brisbin, Jr2, and Charles H. Jagoe2 1Department of Pharmacology and Toxicology, College of Pharmacy, University of Georgia, Athens, GA 30602, USA 2Savannah River Ecology Laboratory, University of Georgia, P.O. Drawer E, Aiken, SC 29801, USA Abstract: Whole body concentrations of radiocesium

  6. Georgia Natural Gas Underground Storage Injections All Operators...

    Annual Energy Outlook

    Injections All Operators (Million Cubic Feet) Georgia Natural Gas Underground Storage Injections All Operators (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 ...

  7. Johnson County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Hide Map This article is a stub. You can help OpenEI by expanding it. Johnson County is a county in Georgia. Its FIPS County Code is 167. It is classified as...

  8. Mitchell County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Hide Map This article is a stub. You can help OpenEI by expanding it. Mitchell County is a county in Georgia. Its FIPS County Code is 205. It is classified as...

  9. In Savannah, Georgia, Even the Data is Green

    Office of Energy Efficiency and Renewable Energy (EERE)

    Savannah, Georgia, used an Energy Efficiency and Conservation Block Grant (EECBG) to relocate its Information Technology Data Center. As a result, the city is slated to save several hundred thousand dollars a year.

  10. FUPWG Meeting Agenda - Jekyll Island, Georgia | Department of...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    FUPWG Meeting Agenda - Jekyll Island, Georgia Logo for the FUPWG Spring 2012 meeting showing a crane, a lake, and wind turbines. The logo reads: Preserving our future with energy ...

  11. Central Georgia EMC- Residential Energy Efficiency Rebate Program

    Energy.gov [DOE]

    Central Georgia Electric Member Corporation (CGEMC) offers rebates for residential customers to increase the energy efficiency of existing homes or to build new energy efficient homes.  This year,...

  12. Stewart County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Hide Map This article is a stub. You can help OpenEI by expanding it. Stewart County is a county in Georgia. Its FIPS County Code is 259. It is classified as...

  13. Georgia Natural Gas LNG Storage Net Withdrawals (Million Cubic...

    Gasoline and Diesel Fuel Update

    Net Withdrawals (Million Cubic Feet) Georgia Natural Gas LNG Storage Net Withdrawals (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 ...

  14. Georgia Natural Gas LNG Storage Withdrawals (Million Cubic Feet...

    Gasoline and Diesel Fuel Update

    Withdrawals (Million Cubic Feet) Georgia Natural Gas LNG Storage Withdrawals (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 ...

  15. Georgia Natural Gas LNG Storage Additions (Million Cubic Feet...

    Annual Energy Outlook

    Additions (Million Cubic Feet) Georgia Natural Gas LNG Storage Additions (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1980's ...

  16. Tift County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Its FIPS County Code is 277. It is classified as ASHRAE 169-2006 Climate Zone Number 3 Climate Zone Subtype A. Registered Energy Companies in Tift County, Georgia Biomass...

  17. Floyd County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Hide Map This article is a stub. You can help OpenEI by expanding it. Floyd County is a county in Georgia. Its FIPS County Code is 115. It is classified as ASHRAE...

  18. Murray County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Hide Map This article is a stub. You can help OpenEI by expanding it. Murray County is a county in Georgia. Its FIPS County Code is 213. It is classified as ASHRAE...

  19. Georgia Natural Gas Input Supplemental Fuels (Million Cubic Feet...

    Energy Information Administration (EIA) (indexed site)

    Input Supplemental Fuels (Million Cubic Feet) Georgia Natural Gas Input Supplemental Fuels (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 ...

  20. Jackson County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Hide Map This article is a stub. You can help OpenEI by expanding it. Jackson County is a county in Georgia. Its FIPS County Code is 157. It is classified as...

  1. Miller County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Hide Map This article is a stub. You can help OpenEI by expanding it. Miller County is a county in Georgia. Its FIPS County Code is 201. It is classified as ASHRAE...

  2. Wheeler County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Hide Map This article is a stub. You can help OpenEI by expanding it. Wheeler County is a county in Georgia. Its FIPS County Code is 309. It is classified as...

  3. Taylor County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Hide Map This article is a stub. You can help OpenEI by expanding it. Taylor County is a county in Georgia. Its FIPS County Code is 269. It is classified as ASHRAE...

  4. Lee County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Hide Map This article is a stub. You can help OpenEI by expanding it. Lee County is a county in Georgia. Its FIPS County Code is 177. It is classified as ASHRAE...

  5. Richmond County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Hide Map This article is a stub. You can help OpenEI by expanding it. Richmond County is a county in Georgia. Its FIPS County Code is 245. It is classified as...

  6. Georgia Total Electric Power Industry Net Summer Capacity, by...

    Energy Information Administration (EIA) (indexed site)

    Georgia" "Energy Source",2006,2007,2008,2009,2010 "Fossil",28238,28096,28078,28103,28087 " Coal",13438,13275,13256,13211,13230 " Petroleum",2182,2169,2187,2188,2189 " Natural ...

  7. City of Palmetto, Georgia (Utility Company) | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Place: Georgia Phone Number: (770) 463-3322 Website: citypalmetto.comindex.aspx?ni Outage Hotline: (770) 463-3322 References: EIA Form EIA-861 Final Data File for 2010 -...

  8. Georgia Total Electric Power Industry Net Generation, by Energy...

    Energy Information Administration (EIA) (indexed site)

    Georgia" "Energy Source",2006,2007,2008,2009,2010 "Fossil",100299,107165,99661,90634,97823 " Coal",86504,90298,85491,69478,73298 " Petroleum",834,788,742,650,641 " Natural ...

  9. Henry County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Hide Map This article is a stub. You can help OpenEI by expanding it. Henry County is a county in Georgia. Its FIPS County Code is 151. It is classified as ASHRAE...

  10. Webster County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Hide Map This article is a stub. You can help OpenEI by expanding it. Webster County is a county in Georgia. Its FIPS County Code is 307. It is classified as...

  11. Montgomery County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Hide Map This article is a stub. You can help OpenEI by expanding it. Montgomery County is a county in Georgia. Its FIPS County Code is 209. It is classified as...

  12. Pike County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Hide Map This article is a stub. You can help OpenEI by expanding it. Pike County is a county in Georgia. Its FIPS County Code is 231. It is classified as ASHRAE...

  13. Evans County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Hide Map This article is a stub. You can help OpenEI by expanding it. Evans County is a county in Georgia. Its FIPS County Code is 109. It is classified as ASHRAE...

  14. White County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Hide Map This article is a stub. You can help OpenEI by expanding it. White County is a county in Georgia. Its FIPS County Code is 311. It is classified as ASHRAE...

  15. Bacon County, Georgia ASHRAE 169-2006 Climate Zone | Open Energy...

    OpenEI (Open Energy Information) [EERE & EIA]

    Bacon County, Georgia ASHRAE 169-2006 Climate Zone Jump to: navigation, search County Climate Zone Place Bacon County, Georgia ASHRAE Standard ASHRAE 169-2006 Climate Zone Number...

  16. Ben Hill County, Georgia ASHRAE 169-2006 Climate Zone | Open...

    OpenEI (Open Energy Information) [EERE & EIA]

    Ben Hill County, Georgia ASHRAE 169-2006 Climate Zone Jump to: navigation, search County Climate Zone Place Ben Hill County, Georgia ASHRAE Standard ASHRAE 169-2006 Climate Zone...

  17. Barrow County, Georgia ASHRAE 169-2006 Climate Zone | Open Energy...

    OpenEI (Open Energy Information) [EERE & EIA]

    Barrow County, Georgia ASHRAE 169-2006 Climate Zone Jump to: navigation, search County Climate Zone Place Barrow County, Georgia ASHRAE Standard ASHRAE 169-2006 Climate Zone Number...

  18. Wood energy in Georgia: a five-year progress report

    SciTech Connect

    Not Available

    1982-01-01

    An increasing number of industrial plants and public and residential facilities in Georgia are using wood, Georgia's greatest renewable energy source, to replace gas, oil, coal, and electricity. All wood systems described in this report are or will soon be in operation in schools, prisons, hospitals, and other state facilities, and are producing substantial financial savings. The economic values from increased markets and jobs are important in all areas of the state, with total benefits projected at $2.9 million a year for state taxpayers. 2 figures.

  19. Energy Department Selects Three Bioenergy Research Centers for...

    Office of Environmental Management (EM)

    ... Laboratory in Golden, Colorado; University of Georgia in Athens, Georgia; Dartmouth College in Hanover, New Hampshire; and the University of Tennessee, in Knoxville, Tennessee. ...

  20. SREL Reprint #3153

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    3 Fifteen microsatellite loci for the decollate snail, Rumina decollata Stacey L. Lance1, Kenneth L. Jones2, Cris Hagen1, Kurt Jordaens3,4, Thierry Backeljau4,5, and Vanya Prévot5,6 1Savannah River Ecology Laboratory, University of Georgia, Aiken, SC 29802, USA 2Georgia Genomics Facility, University of Georgia, Athens, GA 30602, USA 3Royal Museum for Central Africa, Leuvensesteenweg 13, 3080 Tervuren, Belgium 4Evolutionary Ecology Group, University of Antwerp, Groenenborgerlaan 171, 2020

  1. SREL Reprint #3173

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    3 Ten novel microsatellite markers for the western mosquitofish Gambusia affinis K. M. Purcell1, S. L. Lance2, K. L. Jones3, and C. A. Stockwell1 1Department of Biological Sciences, North Dakota State University, NDSU Dept. 2715, 218 Stevens Hall, P.O. Box 6050, Fargo, ND 58108-6050, USA 2Savannah River Ecology Laboratory, University of Georgia, Drawer E, Aiken, SC 29802, USA 3Georgia Genomics Facility, University of Georgia, Athens, GA 30602, USA Abstract: We isolated and characterized 10

  2. SREL Reprint #3325

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    5 Exposure to mercury and Aroclor 1268 congeners in least terns (Sternula antillarum) in coastal Georgia, USA Gabrielle L. Robinson1,2, Gary L. Mills3, Angela H. Lindell3, Sara H. Schweitzer4, and Sonia M. Hernandez1,5 1Warnell School of Natural Resources, University of Georgia, 180 E. Green St., Athens, GA, USA 2Cape Cod National Seashore, 99 Marconi Site Rd, Wellfleet, MA 3University of Georgia Savannah River Ecology Laboratory, PO Drawer E, Aiken, SC, USA 4North Carolina Wildlife Resources

  3. Microsoft Word - DOE-ID-14-045 Georgia Institute of Tech. ...

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    A. Project Title: Zeolite Membranes for KryptonXenon Separation from Spent Nuclear Fuel Reprocessing Off-Gas - Georgia Tech Research Corporation SECTION B. Project Description ...

  4. Microsoft Word - DOE-ID-14-043 Georgia Institute of Tech. _1...

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Georgia Institute of Technology will conduct laboratory scale research on metal ion adsorption from aqueous solutions to provide a better understanding of the performance of...

  5. Remarks by Federal Blue Ribbon Commission J. David Jameson Atlanta, GA

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Federal Blue Ribbon Commission J. David Jameson Atlanta, GA October 18, 2011 Good Morning. I am David Jameson. I am President and CEO of the Greater Aiken, South Carolina, Chamber of Commerce. I am here today in my capacity as current Chairman of the SRS Community Reuse Organization. The SRSCRO is a non-profit regional group supporting economic diversification and job creation in a five-county in Georgia and South Carolina near the Department of Energy's Savannah River Site. We are unique among

  6. General Atomics (GA) | Princeton Plasma Physics Lab

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    General Atomics (GA) Subscribe to RSS - General Atomics (GA) General Atomics Image: General Atomics (GA) The Scorpion's Strategy: "Catch and Subdue" Read more about The Scorpion's...

  7. Registration Open for National Environmental Justice Advisory Council (NEJAC) Public Meeting, September 11-12, 2013, Atlanta, Georgia

    Energy.gov [DOE]

    Registration Open for National Environmental Justice Advisory Council (NEJAC) Public Meeting, September 11-12, 2013, Atlanta, Georgia.

  8. SREL Reprint #3096

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    6 Radiation Ecology I. L. Brisbin Jr. and C. E. Dallas University of Georgia, Athens, GA, USA Abstract: Radiation ecology (henceforth 'radioecology') is a hybrid science derived from the principles of both radiation biology and ecology. The field was born in the 1940s and the 1950s following the testing and deployment of nuclear weapons and the consequential concern for the fate and effects of radioactive materials in the environment. The initial emphasis was on radiation effects. As the field

  9. SREL Reprint #3156

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    6 Isolation and characterization of 17 polymorphic microsatellite loci in the kangaroo mouse, genus Microdipodops (Rodentia: Heteromyidae) Stacey L. Lance1, Jessica E. Light2, Kenneth L. Jones3, Cris Hagen1, and John C. Hafner4 1Savannah River Ecology Laboratory, Aiken, SC 29802, USA 2Department of Wildlife and Fisheries Sciences, Texas A&M University, College Station, TX 77843, USA 3Georgia Genomics Facility, University of Goergia, Athens, GA 30602, USA 4Moore Laboratory of Zoology and

  10. SREL Reprint #3178

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    8 Needles in haystacks: Estimating detection probability and occupancy of rare and cryptic snakes Andrew M. Durso, John D. Willson, and Christopher T. Winne Odum School of Ecology, University of Georgia, Athens, GA 30602, USA Savannah River Ecology Laboratory, Drawer E, Aiken, SC 29802, USA Abstract: The species most in need of conservation or management are often also the most difficult to monitor, because of their rarity, secretive habits, or both. To combat these challenges, presence/absence

  11. SREL Reprint #3193

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    3 Testing the Threat-Sensitive Hypothesis with Predator Familiarity and Dietary Specificity Brian A. Crawford1,2, Caleb R. Hickman1,3, and Thomas M. Luhring1,4 1Savannah River Ecology Laboratory, Aiken, SC, USA 2Warnell School of Forestry and Natural Resources, University of Georgia, Athens, GA, USA 3Department of Zoology, University of Wisconsin, Madison, WI, USA 4Division of Biological Sciences, University of Missouri, Columbia, MO, USA Abstract: In a system with multiple predators, the

  12. SREL Reprint #3281

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    1 Mobilization of colloidal carbon during iron reduction in basaltic soils Shea W. Buettner1, Marc G. Kramer2, Oliver A. Chadwick3, and Aaron Thompson1 1Crop and Soil Sciences Department, University of Georgia, Athens, GA, USA 2Soil and Water Science Department, University of Florida, Gainesville, FL, USA 3Department of Geography, University of California, Santa Barbara, CA, USA Abstract: The transport of organic carbon (C) to deep mineral horizons in soils can lead to long-term C stabilization.

  13. SREL Reprint #3308

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    8 Stable isotope signature of philopatry and dispersal in a migratory songbird Gary R. Graves1, Christopher S. Romanek2,3, and Alejandro Rodriguez Navarro2 1Department of Systematic Biology, MRC-116, National Museum of Natural History, Smithsonian Institution, Washington, DC 20560 2Savannah River Ecology Laboratory, Drawer E, Aiken, SC 29802 3Department of Geology, University of Georgia, Athens, GA 30602 Abstract: Stable isotope analysis is widely promoted as a practical method for tracing the

  14. SREL Reprint #3329

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    9 Quantifying the spatial and temporal variation in dose from external exposure to radiation: a new tool for use on free-ranging wildlife Thomas G. Hinton1, Michael E. Byrne2, Sarah Webster2, and James C. Beasley2 1Institute of Radioprotection and Nuclear Safety, Cadarache, France 2University of Georgia, Savannah River Ecology Laboratory, Warnell School of Forestry and Natural Resources, Athens, GA, USA Abstract: Inadequate dosimetry is often the fundamental problem in much of the controversial

  15. sRecovery Act: Geologic Characterization of the South Georgia Rift Basin for Source Proximal CO2 Storage

    SciTech Connect

    Waddell, Michael

    2014-09-30

    the J/TR section based on neutron log porosity values. The only zones in Rizer #1 that appear to be porous were fractured diabase units where saline formation water was flowing into the borehole. Two geocellular models were created for the SC and GA study area. Flow simulation modeling was performed on the SC data set. The injection simulation used the newly acquired basin data as well as the Petrel 3-D geologic model that included geologic structure. Due to the new basin findings as a result of the newly acquired data, during phase two of the modeling the diabase unit was used as reservoir and the sandstone units were used as caprock. Conclusion are: 1) the SGR basin is composed of numerous sub-basins, 2) this study only looked at portions of two sub-basins, 3) in SC, 30 million tonnes of CO2 can be injected into the diabase units if the fracture network is continuous through the units, 4) due to the severity of the faulting there is no way of assuring the injected CO2 will not migrate upward into the overlying Coastal Plain aquifers, 5) in Georgia there appears to porous zones in the J/TR sandstones, 6) as in SC there is faulting in the sub-basin and the seismic suggest the faulting extends upward into the Coastal Plain making that area not suitable for CO2 sequestration, 7) the complex faulting observed at both study areas appear to be associated with transfer fault zones (Heffner 2013), if sub-basins in the Georgia portion of the SGR basin can be located that are far away from the transfer fault zones there is a strong possibility of sequestering CO2 in these areas, and 9) the SGR basin covers area in three states and this project only studied two small areas so there is enormous potential for CO2 sequestration in other portions the basin and further research needs to be done to find these areas.

  16. Investigation of the GaN-on-GaAs interface for vertical power device applications

    SciTech Connect

    Mreke, Janina Uren, Michael J.; Kuball, Martin; Novikov, Sergei V.; Foxon, C. Thomas; Hosseini Vajargah, Shahrzad; Wallis, David J.; Humphreys, Colin J.; Haigh, Sarah J.; Al-Khalidi, Abdullah; Wasige, Edward; Thayne, Iain

    2014-07-07

    GaN layers were grown onto (111) GaAs by molecular beam epitaxy. Minimal band offset between the conduction bands for GaN and GaAs materials has been suggested in the literature raising the possibility of using GaN-on-GaAs for vertical power device applications. I-V and C-V measurements of the GaN/GaAs heterostructures however yielded a rectifying junction, even when both sides of the junction were heavily doped with an n-type dopant. Transmission electron microscopy analysis further confirmed the challenge in creating a GaN/GaAs Ohmic interface by showing a large density of dislocations in the GaN layer and suggesting roughening of the GaN/GaAs interface due to etching of the GaAs by the nitrogen plasma, diffusion of nitrogen or melting of Ga into the GaAs substrate.

  17. SREL Reprint #3116

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    6 Development and characterization of microsatellite loci in the American white pelican (Pelecanus erythrorhynchos) Caleb R. Hickman1, Maureen B. Peters1, Nicholas G. Crawford1, Cris Hagen1, Travis C. Glenn1,2, and Christopher M. Somers3 1Savannah River Ecology Laboratory, University of Georgia, Drawer E, Aiken, SC 29802, USA 2Department of Environmental Health Science, University of Georgia, Athens, GA 30602, USA 3Department of Biology, University of Regina, Regina, SK, Canada S4S 0A2 Abstract:

  18. SREL Reprint #3185

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    5 Effects of Roads and Crabbing Pressures on Diamondback Terrapin Populations in Coastal Georgia Andrew M. Grosse1,2, John C. Maerz1, Jeffrey Hepinstall-Cymerman1, and Michael E. Dorcas3 1Daniel B. Warnell School of Forestry and Natural Resources, The University of Georgia, Athens, GA 30602, USA 2Savannah River Ecology Lab, Savannah River Site, Building 737-A, Drawer E, Aiken, SC 29802, USA 3Davidson College, Davidson, NC 28035, USA Abstract: Human activities, including the harvesting of natural

  19. SREL Reprint #3341

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    1 Evaluating the effect of sample type on American alligator (Alligator mississippiensis) analyte values in a point-of-care blood analyser Matthew T. Hamilton1,2, John W. Finger Jr1,3, Megan E. Winzeler1, and Tracey D. Tuberville1 1Savannah River Ecology Laboratory, University of Georgia, Aiken, SC 29802, USA 2Warnell School of Forestry and Natural Resources, University of Georgia, Athens, GA 30602, USA 3Department of Biological Sciences, Auburn University, Auburn, AL 36849, USA Abstract: The

  20. SREL Reprint #3351

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    1 Where the wild things are: influence of radiation on the distribution of four mammalian species within the Chernobyl Exclusion Zone Sarah C. Webster1,2, Michael E. Byrne1,2,3, Stacey L. Lance1, Cara N. Love1,4, Thomas G. Hinton5, Dmitry Shamovic6, and James C. Beasley1,2 1University of Georgia, Savannah River Ecology Laboratory, Aiken, SC 2Warnell School of Forestry and Natural Resources, University Georgia, Athens, GA 3Halmos College of Natural Sciences and Oceanography, Guy Harvey Research

  1. SREL Reprint #3368

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    8 Chronic ingestion of coal fly-ash contaminated prey and its effects on health and immune parameters in juvenile American alligators (Alligator mississippiensis) John W. Finger Jr.1,2,3, Matthew T. Hamilton2,4, Brian S. Metts2, Travis C. Glenn1,3, and Tracey D. Tuberville2,3 1Department of Environmental Health Science, University of Georgia, Athens, GA 30602, USA 2Savannah River Ecology Laboratory, University of Georgia, Aiken, SC 29802, USA 3Interdisciplinary Toxicology Program, University of

  2. SREL Reprint #3375

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    5 Identification of robust microsatellite markers for wild pig fecal DNA Elizabeth M. Kierepka1, Shem D. Unger1, David A. Keiter1,2, James C. Beasley1,2, Olin E. Rhodes, Jr1, Fred L. Cunningham3, and Antoinette J. Piaggio4 1University of Georgia, Savannah River Ecology Laboratory, Aiken, SC 29802, USA 2Warnell School of Forestry and Natural Resources, University of Georgia, Athens, GA USA 3U.S. Department of Agriculture, Mississippi Field Station, National Wildlife Research Center, Wildlife

  3. Georgia Natural Gas Number of Commercial Consumers (Number of Elements)

    Energy Information Administration (EIA) (indexed site)

    Commercial Consumers (Number of Elements) Georgia Natural Gas Number of Commercial Consumers (Number of Elements) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1980's 94 98,809 102,277 106,690 1990's 108,295 109,659 111,423 114,889 117,980 120,122 123,200 123,367 126,050 225,020 2000's 128,275 130,373 128,233 129,867 128,923 128,389 127,843 127,832 126,804 127,347 2010's 124,759 123,454 121,243 126,060 122,578 123,307 - = No Data Reported; -- = Not Applicable; NA =

  4. Georgia Natural Gas Number of Industrial Consumers (Number of Elements)

    Energy Information Administration (EIA) (indexed site)

    Industrial Consumers (Number of Elements) Georgia Natural Gas Number of Industrial Consumers (Number of Elements) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1980's 3 3,034 3,144 3,079 1990's 3,153 3,124 3,186 3,302 3,277 3,261 3,310 3,310 3,262 5,580 2000's 3,294 3,330 3,219 3,326 3,161 3,543 3,053 2,913 2,890 2,254 2010's 2,174 2,184 2,112 2,242 2,481 2,548 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of

  5. Georgia Natural Gas Number of Residential Consumers (Number of Elements)

    Energy Information Administration (EIA) (indexed site)

    Residential Consumers (Number of Elements) Georgia Natural Gas Number of Residential Consumers (Number of Elements) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1980's 1,190 1,237,201 1,275,128 1,308,972 1990's 1,334,935 1,363,723 1,396,860 1,430,626 1,460,141 1,495,992 1,538,458 1,553,948 1,659,730 1,732,865 2000's 1,680,749 1,737,850 1,735,063 1,747,017 1,752,346 1,773,121 1,726,239 1,793,650 1,791,256 1,744,934 2010's 1,740,587 1,740,006 1,739,543 1,805,425

  6. Georgia Natural Gas Pipeline and Distribution Use (Million Cubic Feet)

    Energy Information Administration (EIA) (indexed site)

    (Million Cubic Feet) Georgia Natural Gas Pipeline and Distribution Use (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1990's 7,973 7,606 8,846 2000's 5,636 7,411 7,979 7,268 6,235 5,708 6,092 5,188 5,986 6,717 2010's 8,473 10,432 10,509 7,973 6,977 7,296 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 10/31/2016 Next Release Date: 11/30/2016 Referring

  7. Georgia Natural Gas Total Consumption (Million Cubic Feet)

    Energy Information Administration (EIA) (indexed site)

    Total Consumption (Million Cubic Feet) Georgia Natural Gas Total Consumption (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1990's 371,376 368,579 337,576 2000's 413,845 351,109 383,546 379,761 394,986 412,560 420,469 441,107 425,043 462,799 2010's 530,030 522,897 615,771 625,283 652,408 692,267 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 10/31/2016

  8. Georgia Natural Gas % of Total Residential Deliveries (Percent)

    Energy Information Administration (EIA) (indexed site)

    % of Total Residential Deliveries (Percent) Georgia Natural Gas % of Total Residential Deliveries (Percent) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1990's 2.33 2.18 2.36 2.42 2.30 2.38 2.09 2000's 2.82 2.51 2.59 2.56 2.60 2.58 2.52 2.37 2.44 2.48 2010's 2.90 2.40 2.35 2.48 2.64 2.56 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 10/31/2016 Next Release Date: 11/30/2016

  9. Distribution automation pilot project at Georgia Power Company. Final report

    SciTech Connect

    Hall, J.M.

    1997-12-01

    This report includes a Benefit-Cost Study for Distribution Automation (DA) at Georgia Power Company, an Evaluation of two communication systems for Distribution Automation, and Development and Evaluation of a standards-based interface between an AM/FM system and SCADA. The Benefit-Cost Study addresses the functional requirements and performance of the major Distribution Automation functions under GPC`s conditions. Five implementation scenarios for Distribution Automation are analyzed. The performance of the DA functions is simulated for four prototype GPC substations in the Carrollton and Tucker areas. The results of the simulation are extrapolated for the entire GPC distribution system. A number of reliability related functions along with real-time modeling and volt/var control functions are recommended for implementation at GPC. GPC has installed two pilot communication systems for Distribution Automation. Both pilot systems use proprietary radio technologies for communications with pole-top power system devices and customer meters. One of these systems, in the Carrollton area, uses a Metricom{trademark} UtiliNet{trademark} radio system, and the other, in the Tucker area, uses a CellNet{trademark} Data Systems, Inc. CellNet radio system. The performance of these two systems is described and evaluated in the project. The advantages and disadvantages of the communication systems for the recommended distribution automation system at GPC are analyzed. A transfer format from a mapping and facilities database to a SCADA database for the Georgia Power Company was developed and tested for the project. The mapping and facilities database is implemented as an Oracle database in the ARC/Info AM/FM/GIS application by ESRI, and the SCADA database is implemented on the OASyS 5.0 SCADA platform provided by Valmet Automation. The National Transfer Format (NTF) is the vehicle for the transfer of data from the GIS to the SCADA system.

  10. Cost-Effectiveness of ASHRAE Standard 90.1-2010 for the State of Georgia

    SciTech Connect

    Hart, Philip R.; Rosenberg, Michael I.; Xie, YuLong; Zhang, Jian; Richman, Eric E.; Elliott, Douglas B.; Loper, Susan A.; Myer, Michael

    2013-11-01

    Moving to the ANSI/ASHRAE/IES Standard 90.1-2010 version from the Base Code (90.1-2007) is cost-effective for all building types and climate zones in the State of Georgia.

  11. EECBG Success Story: Georgia County Turning Industrial and Farm Waste Into Big Energy Savings

    Energy.gov [DOE]

    Gwinnett County, Georgia built a "Gas to Energy" system at the city water resources center that will reduce operational costs and sanitary sewer overflows, thanks to an Energy Efficiency and Conservation Block Grant (EECBG). Learn more.

  12. Georgia County Turning Industrial and Farm Waste Into Big Energy Savings

    Energy.gov [DOE]

    Thanks to a Department of Energy Recovery Act grant, Gwinnett County, Georgia is taking some of the grossest stuff on earth and turning it into some of the greenest stuff on earth.

  13. EA-1255: Project Partnership Transportation of Foreign-Owned Enriched Uranium from the Republic of Georgia

    Office of Energy Efficiency and Renewable Energy (EERE)

    This EA evaluates the environmental impacts for the proposal to transport 5.26 kilograms of enriched uranium-23 5 in the form of nuclear fuel, from the Republic of Georgia to the United Kingdom.

  14. Wind Powering America: A New Wind Economy for South Carolina and Georgia Final Report

    SciTech Connect

    SC Energy Office: Southern Alliance for Clean Energy

    2013-02-12

    This report describes all activities undertaken by the Southern Alliance for Clean Energy (SACE) in cooperation with the states of Georgia and South Carolina to develop a public outreach program, including shared analytical and reference tools and other technical assistance.

  15. Sec. Moniz to Georgia, Energy Department Scheduled to Close on Loan

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Guarantees to Construct New Nuclear Power Plant Reactors | Department of Energy to Georgia, Energy Department Scheduled to Close on Loan Guarantees to Construct New Nuclear Power Plant Reactors Sec. Moniz to Georgia, Energy Department Scheduled to Close on Loan Guarantees to Construct New Nuclear Power Plant Reactors February 19, 2014 - 1:30pm Addthis Washington D.C. - Building on President Obama's State of the Union address to Congress and the American public last month, U.S. Secretary of

  16. Georgia Regional High School Science Bowl | U.S. DOE Office of Science (SC)

    Office of Science (SC)

    Georgia Regional High School Science Bowl National Science Bowl® (NSB) NSB Home About Regional Competitions Rules, Forms, and Resources High School Regionals Middle School Regionals National Finals Volunteers Key Dates Frequently Asked Questions News Media Contact Us WDTS Home Contact Information National Science Bowl® U.S. Department of Energy SC-27/ Forrestal Building 1000 Independence Ave., SW Washington, DC 20585 E: Email Us High School Regionals Georgia Regional High School Science Bowl

  17. Georgia Regional Middle School Science Bowl | U.S. DOE Office of Science

    Office of Science (SC)

    (SC) Georgia Regional Middle School Science Bowl National Science Bowl® (NSB) NSB Home About Regional Competitions Rules, Forms, and Resources High School Regionals Middle School Regionals National Finals Volunteers Key Dates Frequently Asked Questions News Media Contact Us WDTS Home Contact Information National Science Bowl® U.S. Department of Energy SC-27/ Forrestal Building 1000 Independence Ave., SW Washington, DC 20585 E: Email Us Middle School Regionals Georgia Regional Middle School

  18. GEORGIA TECH ENERGY AND SUSTAINABILITY SERVICES (GTESS) ANSI-Accredited Standards Developer

    Energy.gov [DOE] (indexed site)

    GEORGIA TECH ENERGY AND SUSTAINABILITY SERVICES (GTESS) ANSI-Accredited Standards Developer Clarification of Intent: SEP energy management standards Administrator: Holly Grell-Lawe (holly.lawe@innovate.gatech.edu) When originating or replying, please respond to the Administrator Updated 28 September 2015 BACKGROUND Georgia Tech Energy and Sustainability Services (GTESS) is an American National Standards Institute (ANSI) accredited standards developer, which developed ANSI/MSE 50021, ANSI/MSE

  19. GA SNC Solar | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    GA-SNC Solar Place: Nevada Sector: Solar Product: Nevada-based PV project developer and joint venture of GA-Solar North America and Sierra Nevada Corp. References: GA-SNC...

  20. Energy conserving site design case study: Shenandoah, Georgia. Final report

    SciTech Connect

    Not Available

    1980-01-01

    The case study examines the means by which energy conservation can be achieved at an aggregate community level by using proper planning and analytical techniques for a new town, Shenandoah, Georgia, located twenty-five miles southwest of Atlanta's Hartsfield International Airport. A potentially implementable energy conservation community plan is achieved by a study team examining the land use options, siting characteristics of each building type, alternate infrastructure plans, possible decentralized energy options, and central utility schemes to determine how community energy conservation can be achieved by use of pre-construction planning. The concept for the development of mixed land uses as a passively sited, energy conserving community is based on a plan (Level 1 Plan) that uses the natural site characteristics, maximizes on passive energy siting requirement, and allows flexibility for the changing needs of the developers. The Level 2 Plan is identical with Level 1 plan plus a series of decentraized systems that have been added to the residential units: the single-family detached, the apartments, and the townhouses. Level 3 Plan is similar to the Level 1 Plan except that higher density dwellings have been moved to areas adjacent to central site. The total energy savings for each plan relative to the conventional plan are indicated. (MCW)

  1. Georgia Natural Gas Pipeline and Distribution Use Price (Dollars per

    Energy Information Administration (EIA) (indexed site)

    Thousand Cubic Feet) Price (Dollars per Thousand Cubic Feet) Georgia Natural Gas Pipeline and Distribution Use Price (Dollars per Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1960's 0.19 0.19 0.19 1970's 0.20 0.22 0.23 0.25 0.28 0.32 0.36 0.67 0.90 1.35 1980's 2.10 2.78 3.11 3.22 3.26 3.23 3.32 2.50 2.41 2.69 1990's 2.19 2.08 2.08 2.24 2.14 1.93 2.62 3.09 2.48 2.18 2000's 3.30 4.57 NA -- -- -- - = No Data Reported; -- = Not Applicable; NA

  2. Ecological investigation of a hazardous waste site, Warner Robins, Georgia

    SciTech Connect

    Wade, M.C. ); Billig, P. )

    1993-01-01

    Zone 1, Robins Air Force Base, Georgia, has been designated a National Priorities List Site by the US Environmental Protection Agency. The Remedial Investigation for Zone 1 recommended a quantitative analysis of ecological risk. To accomplish this task a characterization of the bottomland hardwood forest ecosystem present on the base was required. This ecological characterization included the study of hydrology, aquatic and wildlife biology, and wetlands ecology where potential impacts were in question. In addition, a suitable reference area was studied. The hydrologic investigation consisted primarily of the installation of water level recorders and staff gauges, collection of surface water data, installation of piezometers and collection of groundwater data, and the collection of rainfall data. The aquatic biology investigation centered around the sampling of benthic macroinvertebrate communities, bioassay toxicity tests for surface water and sediment, fish sampling, aquatic macrophyte collection, macrophyte collection, and emergent and free-floating plant collection. The wildlife biology investigation focused on a breeding bird survey. The wetlands ecology investigation comprised the collection of soil and vegetation samples and using the Wetland Evaluation Technique (WET) to assess the functions and values of the wetlands present.

  3. GaInNAs laser gain

    SciTech Connect

    CHOW,WENG W.; JONES,ERIC D.; MODINE,NORMAND A.; KURTZ,STEVEN R.; ALLERMAN,ANDREW A.

    2000-05-23

    The optical gain spectra for GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of the lasing threshold current density of GaInNAs/GaAs quantum well structures.

  4. GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study

    SciTech Connect

    Wheeldon, Jeffrey F.; Valdivia, Christopher E.; Walker, Alex; Kolhatkar, Gitanja; Hall, Trevor J.; Hinzer, Karin; Masson, Denis; Riel, Bruno; Fafard, Simon; Jaouad, Abdelatif; Turala, Artur; Ares, Richard; Aimez, Vincent

    2010-10-14

    The following four TJ designs, AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs are studied to determine minimum doping concentration to achieve a resistance of <10{sup -4} {omega}{center_dot}cm{sup 2} and a peak tunneling current suitable for MJ solar cells up to 1500-suns concentration (operating current of 21 A/cm{sup 2}). Experimentally calibrated numerical models are used to determine how the resistance changes as a function of doping concentration. The AlGaAs/GaAs TJ design is determined to require the least doping concentration to achieve the specified resistance and peak tunneling current, followed by the GaAs/GaAs, and AlGaAs/AlGaAs TJ designs. The AlGaAs/InGaP TJ design can only achieve resistances >5x10{sup -4} {omega}cm{sup 2}.

  5. The Economic Impact of the Savannah River Site on the Adjacent Five Counties in South Carolina and Georgia

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Economic Impact of the Savannah River Site on Five Adjacent Counties in South Carolina and Georgia ____________________________________________________________________________________ i The Economic Impact of the Savannah River Site on Five Adjacent Counties in South Carolina and Georgia ____________________________________________________________________________________ ii ACKNOWLEDGEMENTS The O'Connell Center for Executive Development at the University of South Carolina-Aiken would like to

  6. General Atomics (GA) Fusion News: A New Spin on Understanding...

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    General Atomics (GA) Fusion News: A New Spin on Understanding Plasma Confinement American Fusion News Category: General Atomics (GA) Link: General Atomics (GA) Fusion News: A New ...

  7. Ecological investigation of a hazardous waste site, Warner Robins, Georgia

    SciTech Connect

    Wade, M.; Billig, P.

    1993-05-01

    Landfill No. 4 and the sludge lagoon at Robins Air Force Base, Warner Robins, Georgia, were added to the United States Environmental Protection Agency (EPA) National Priorities List in 1987 because of highpotential for contaminant migration. Warner Robins is located approximately 90 miles southeast of Atlanta. In 1990 CH2M HILL conducted a Remedial Investigation at the base that recommended that further ecological assessment investigations be conducted (CH2M HILL 1990). The subject paper is the result of this recommendation. The ecological study was carried out by the Hazardous Waste Remedial Actions Program (HAZWRAP)Division of Martin Marietta Energy Systems, Inc., working jointly with its subcontractor CDM (CDM 1992a). The primary area of investigation (Zone 1) included the sludge lagoon, Landfill No. 4, the wetland area east of the landfill and west of Hannah Road (including two sewage treatment ponds), and the area between Hannah Road and Horse Creek (Fig. 1). The bottomland forest wetlands of Zone 1 extend from the landfill east to Horse Creek. Surface water and groundwater flow across Zone 1 is generally in an easterly direction toward Horse Creek. Horse Creek is a south-flowing tributary of the Ocmulgee River Floodplain. The objective of the study was to perform a quantitative analysis of ecological risk associated with the ecosystems present in Zone 1. This investigation was unique because the assessment was to be based upon many measurement endpoints resulting in both location-specific data and data that would assess the condition of the overall ecosystem. The study was segregated into five distinct field investigations: hydrology, surface water and sediment, aquatic biology, wetlands ecology, and wildlife biology.

  8. Sakis Meliopoulos, Georgia Institute of Technology, PSERC webinar, 2/16/2016

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Protection and Control of Systems with Converter Interfaced Generation Sakis Meliopoulos Georgia Power Distinguished Professor School of Electrical and Computer Engineering Georgia Institute of Technology sakis.m@gatech.edu PSERC Public Webinar February 16, 2016 2:00-3:00 p.m. Eastern Time (11:00-12:00 p.m. Pacific) If you plan to use the phone bridge, use the NEW number: 877-820-7831 (passcode: 965722#). Description: The protection of converter interfaced generation and associated circuits and

  9. New Whole-House Solutions Case Study: Pine Mountain Builders, Pine Mountain, Georgia

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Pine Mountain Builders began working with Building America research partners IBACOS and Southface Energy Institute in 2005 to design energy-efficient homes for a green community of 140 homes in western Georgia. Their designs have yielded homes with HERS scores as low as 59, electric bills as low as $50 a month (or half the state average), and 30% energy savings compared to homes built to the Georgia state energy code. The thermal envelopes of Pine Mountain's homes are built to be airtight.

  10. Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)

    SciTech Connect

    Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel; Que, Christopher T.; Yamamoto, Kohji; Tani, Masahiko

    2012-12-15

    Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

  11. New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems

    SciTech Connect

    Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

    2005-11-01

    GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

  12. Temperature coefficients for GaInP/GaAs/GaInNAsSb solar cells

    SciTech Connect

    Aho, Arto; Isoaho, Riku; Tukiainen, Antti; Polojärvi, Ville; Aho, Timo; Raappana, Marianna; Guina, Mircea

    2015-09-28

    We report the temperature coefficients for MBE-grown GaInP/GaAs/GaInNAsSb multijunction solar cells and the corresponding single junction sub-cells. Temperature-dependent current-voltage measurements were carried out using a solar simulator equipped with a 1000 W Xenon lamp and a three-band AM1.5D simulator. The triple-junction cell exhibited an efficiency of 31% at AM1.5G illumination and an efficiency of 37–39% at 70x real sun concentration. The external quantum efficiency was also measured at different temperatures. The temperature coefficients up to 80°C, for the open circuit voltage, the short circuit current density, and the conversion efficiency were determined to be −7.5 mV/°C, 0.040 mA/cm{sup 2}/°C, and −0.09%/°C, respectively.

  13. Summary of Needs and Opportunities from the 2011 Residential Energy Efficiency Stakeholders Meeting: Atlanta, Georgia -- March 16-18, 2011

    SciTech Connect

    Not Available

    2011-05-01

    This summary report outlines needs and issues for increasing energy efficiency of new and existing U.S homes, as identified at the U.S Department of Energy Building America program Spring 2011 stakeholder meeting in Atlanta, Georgia.

  14. EA-1865: Department of Energy Loan Guarantee to Kior, Inc., for Biorefinery Facilities in Georgia, Mississippi, and Texas

    Energy.gov [DOE]

    This EA will evaluate the environmental impacts of a proposal to issue a Federal loan guarantee to Kior, Inc., for biorefinery facilities in Georgia, Mississippi, and Texas. This EA is on hold.

  15. InGaAsN/GaAs heterojunction for multi-junction solar cells

    DOEpatents

    Kurtz, Steven R.; Allerman, Andrew A.; Klem, John F.; Jones, Eric D.

    2001-01-01

    An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

  16. Magnetism and transport properties of epitaxial Fe-Ga thin films on GaAs(001)

    SciTech Connect

    Duong Anh Tuan; Shin, Yooleemi; Cho, Sunglae; Dang Duc Dung; Vo Thanh Son

    2012-04-01

    Epitaxial Fe-Ga thin films in disordered bcc {alpha}-Fe crystal structure (A2) have been grown on GaAs(001) by molecular beam epitaxy. The saturated magnetization (M{sub S}) decreased from 1371 to 1105 kA/m with increasing Ga concentration from 10.5 to 24.3 % at room temperature. The lattice parameter increased with the increase in Ga content because of the larger atomic radius of Ga atom than that of Fe. The increase in carrier density with Ga content caused in lower resistivity.

  17. Graphene induced remote surface scattering in graphene/AlGaN/GaN heterostructures

    SciTech Connect

    Liu, Xiwen; Li, Dan; Wang, Bobo; Liu, Bin; Chen, Famin; Jin, Guangri; Lu, Yanwu

    2014-10-20

    The mobilities of single-layer graphene combined with AlGaN/GaN heterostructures on two-dimensional electron gases in graphene/AlGaN/GaN double heterojunction are calculated. The impact of electron density in single-layer graphene is also studied. Remote surface roughness (RSR) and remote interfacial charge (RIC) scatterings are introduced into this heterostructure. The mobilities limited by RSR and RIC are an order of magnitude higher than that of interface roughness and misfit dislocation. This study contributes to designing structures for generation of higher electron mobility in graphene/AlGaN/GaN double heterojunction.

  18. 6,"Edwin I Hatch","Nuclear","Georgia Power Co",1759 7,"Thomas A Smith Energy Facility","Natural gas","Oglethorpe Power Corporation",1290

    Energy Information Administration (EIA) (indexed site)

    Georgia" ,"Plant","Primary energy source","Operating company","Net summer capacity (MW)" 1,"Scherer","Coal","Georgia Power Co",3389 2,"Bowen","Coal","Georgia Power Co",3202 3,"Jack McDonough","Natural gas","Georgia Power Co",2578 4,"Vogtle","Nuclear","Georgia Power Co",2302 5,"Wansley","Coal","Georgia Power

  19. Band Structure of Strain-Balanced GaAsBi/GaAsN Super-lattices on GaAs

    SciTech Connect

    Hwang, J.; Phillips, J. D.

    2011-05-31

    GaAs alloys with dilute content of Bi and N provide a large reduction in band-gap energy with increasing alloy composition. GaAsBi/GaAsN heterojunctions have a type-II band alignment, where superlattices based on these materials offer a wide range for designing effective band-gap energy by varying superlattice period and alloy composition. The miniband structure and effective band gap for strain-balanced GaAsBi/GaAsN superlattices with effective lattice match to GaAs are calculated for alloy compositions up to 5% Bi and N using the kp method. The effective band gap for these superlattices is found to vary between 0.89 and 1.32 eV for period thickness ranging from 10 to 100 . The joint density of states and optical absorption of a 40/40 GaAs0.96Bi0.04/GaAs0.98N0.02 superlattice are reported demonstrating a ground-state transition at 1.005 eV and first excited transition at 1.074 eV. The joint density of states is similar in magnitude to GaAs, while the optical absorption is approximately one order of magnitude lower due to the spatially indirect optical transition in the type-II structure. The GaAsBi/GaAsN system may provide a new material system with lattice match to GaAs in a spectral range of high importance for optoelectronic devices including solar cells, photodetectors, and light emitters.

  20. Optical and magnetotransport properties of InGaAs/GaAsSb/GaAs structures doped with a magnetic impurity

    SciTech Connect

    Kalentyeva, I. L. Zvonkov, B. N.; Vikhrova, O. V.; Danilov, Yu. A.; Demina, P. B.; Dorokhin, M. V.; Zdoroveyshchev, A. V.

    2015-11-15

    InGaAs/GaAsSb/GaAs bilayer quantum-well structures containing a magnetic-impurity δ-layer (Mn) at the GaAs/InGaAs interface are experimentally studied for the first time. The structures are fabricated by metal organic chemical-vapor deposition (MOCVD) and laser deposition on substrates of conducting (n{sup +}) and semi-insulating GaAs in a single growth cycle. The InGaAs-layer thickness is varied from 1.5 to 5 nm. The significant effect of a decrease in the InGaAs quantum-well thickness on the optical and magnetotransport properties of the structures under study is detected. Nonlinear magnetic-field dependence of the Hall resistance and negative magnetoresistance at temperatures of ≤30–40 K, circular polarization of the electroluminescence in a magnetic field, opposite behaviors of the photoluminescence and electroluminescence emission intensities in the structures, and an increase in the contribution of indirect transitions with decreasing InGaAs thickness are observed. Simulation shows that these effects can be caused by the influence of the δ-layer of acceptor impurity (Mn) on the band structure and the hole concentration distribution in the bilayer quantum well.

  1. AlGaAsSb/GaSb Distributed Bragg Reflectors Grown by Organometallic Vapor Phase Epitaxy

    SciTech Connect

    C.A. Wang; C.J. Vineis; D.R. Calawa

    2002-02-13

    The first AlGaAsSb/GaSb quarter-wave distributed Bragg reflectors grown by metallic vapor phase epitaxy are reported. The peak reflectance is 96% for a 10-period structure.

  2. Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs...

    Office of Scientific and Technical Information (OSTI)

    irradiated AlGaNGaN HEMTs This content will become publicly available on August 26, 2016 Title: Degradation mechanisms of 2 MeV proton irradiated AlGaNGaN HEMTs Authors: ...

  3. (In,Ga)As/GaP electrical injection quantum dot laser

    SciTech Connect

    Heidemann, M. Höfling, S.; Kamp, M.

    2014-01-06

    The paper reports on the realization of multilayer (In,Ga)As/GaP quantum dot (QD) lasers grown by gas source molecular beam epitaxy. The QDs have been embedded in (Al,Ga)P/GaP waveguide structures. Laser operation at 710 nm is obtained for broad area laser devices with a threshold current density of 4.4 kA/cm{sup 2} at a heat-sink temperature of 80 K.

  4. CX-005925: Categorical Exclusion Determination

    Energy.gov [DOE]

    Energy Efficiency and Conservation Block Grant - Georgia-City-Athens Clarke, Unified Government ofCX(s) Applied: A9, A11, B1.32, B2.5, B5.1Date: 05/13/2011Location(s): Athens-Clarke, GeorgiaOffice(s): Energy Efficiency and Renewable Energy

  5. CX-002777: Categorical Exclusion Determination

    Energy.gov [DOE]

    Georgia-City-Unified Government of Athens-ClarkeCX(s) Applied: B1.32, B2.5, A9, A11, B5.1Date: 06/17/2010Location(s): Athens, GeorgiaOffice(s): Energy Efficiency and Renewable Energy

  6. SREL Reprint #3176

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    6 Soil nitrogen availability and in situ nitrogen uptake by Acer rubrum L. and Pinus palustris Mill. in the southeastern U.S. Coastal Plain Virginia L. Jin1, Christopher S. Romanek2, Lisa A. Donovan3, and Rebecca R. Sharitz4 1USDA-ARS, Lincoln, NE 68583 2Department of Earth and Environmental Sciences, University of Kentucky, Lexington, KY 40506 3Department of Plant Biology, University of Georgia, Athens, GA 30702 4Savannah River Ecology Laboratory, Aiken, SC 29802 Abstract: Plant uptake of soil

  7. SREL Reprint #3206

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    6 Health and Reproductive Assessment of a Free-Ranging Gopher Tortoise (Gopherus polyphemus) Population Following Translocation Sonia M. Hernandez1,2,3, Tracey D. Tuberville4, Paul Frank5, Scott J. Stahl6, Michael M. McBride3, Kurt A. Buhlmann4,7, and Stephen J. Divers3 1Daniel B. Warnell School of Forestry and Natural Resources, 180 E Green Street, University of Georgia, Athens, GA 30602, USA 2Southeastern Cooperative Wildlife Disease Study, College of Veterinary Medicine, University of

  8. SREL Reprint #3218

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    8 Changes in Diameter Growth of Taxodium distichum in Response to Flow Alterations in the Savannah River Monica M. Palta1, Thomas W. Doyle2, C. Rhett Jackson3, Judy L. Meyer4, and Rebecca R. Sharitz5,6 1Department of Ecology & Evolution, Rutgers University, 14 College Farm Rd, New Brunswick, NJ 08901, USA 2USGS, National Wetlands Research Center, 700 Cajundome Blvd, LaFayette, LA 70506, USA 3Warnell School of Forestry, University of Georgia, 180 E Green Street, Athens, GA 30602, USA 4Odum

  9. SREL Reprint #3338

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    8 Impacts of degraded DNA on restriction enzyme associated DNA sequencing (RADSeq) Carly F. Graham1, Travis C. Glenn2, Andrew G. McArthur3, Douglas R. Boreham4, Troy Kieran2, Stacey Lance5, Richard G. Manzon1, Jessica A. Martino1, Todd Pierson2, Sean M. Rogers6, Joanna Y. Wilson7, and Christopher M. Somers1 1Department of Biology, University of Regina, Regina, Saskatchewan S4S 0A2, Canada 2College of Public Health, University of Georgia, Athens, GA 30602, USA 3M.G. DeGroote Institute for

  10. Erin Abernethy | Savannah River Ecology Laboratory

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Erin Abernethy SREL Graduate Program Odum School of Ecology Erin Abernethy Masters Student Rhodes Lab Erin joined the Savannah River Ecology Lab in January 2013 as a Master’s student with Dr. Gene Rhodes through the Odum School of Ecology at the University of Georgia. Erin grew up in Aiken, SC, and is currently attending classes in Athens, Ga. She will be studying the scavenging ecology of invasive species in Hawai’i, as well as doing field and lab work at SREL. Before joining SREL, Erin lived

  11. GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators

    SciTech Connect

    Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

    2005-08-01

    We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

  12. EIS-0476: Vogtle Electric Generating Plant in Burke County, GA...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    6: Vogtle Electric Generating Plant in Burke County, GA EIS-0476: Vogtle Electric Generating Plant in Burke County, GA EIS-0476: Final Environmental Impact Statement EIS-0476: ...

  13. A hole modulator for InGaN/GaN light-emitting diodes

    SciTech Connect

    Zhang, Zi-Hui; Kyaw, Zabu; Liu, Wei; Ji, Yun; Wang, Liancheng; Tan, Swee Tiam; Sun, Xiao Wei E-mail: VOLKAN@stanfordalumni.org; Demir, Hilmi Volkan E-mail: VOLKAN@stanfordalumni.org

    2015-02-09

    The low p-type doping efficiency of the p-GaN layer has severely limited the performance of InGaN/GaN light-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active region. The essence of improving the hole injection efficiency is to increase the hole concentration in the p-GaN layer. Therefore, in this work, we have proposed a hole modulator and studied it both theoretically and experimentally. In the hole modulator, the holes in a remote p-type doped layer are depleted by the built-in electric field and stored in the p-GaN layer. By this means, the overall hole concentration in the p-GaN layer can be enhanced. Furthermore, the hole modulator is adopted in the InGaN/GaN LEDs, which reduces the effective valance band barrier height for the p-type electron blocking layer from ?332?meV to ?294?meV at 80?A/cm{sup 2} and demonstrates an improved optical performance, thanks to the increased hole concentration in the p-GaN layer and thus the improved hole injection into the MQWs.

  14. AlGaN/GaN heterostructure prepared on a Si (110) substrate via pulsed sputtering

    SciTech Connect

    Watanabe, T.; Ohta, J.; Kondo, T.; Ohashi, M.; Ueno, K.; Kobayashi, A.; Fujioka, H.

    2014-05-05

    GaN films were grown on Si (110) substrates using a low-temperature growth technique based on pulsed sputtering. Reduction of the growth temperature suppressed the strain in the GaN films, leading to an increase in the critical thickness for crack formation. In addition, an AlGaN/GaN heterostructure with a flat heterointerface was prepared using this technique. Furthermore, the existence of a two dimensional electron gas at the heterointerface with a mobility of 1360 cm{sup 2}/Vs and a sheet carrier density of 1.3??10{sup 13}?cm{sup ?2} was confirmed. Finally, the use of the AlGaN/GaN heterostructure in a high electron mobility transistor was demonstrated. These results indicate that low-temperature growth via pulsed sputtering is quite promising for the fabrication of GaN-based electronic devices.

  15. Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors

    SciTech Connect

    Liu, Chao; Cai, Yuefei; Liu, Zhaojun; Ma, Jun; Lau, Kei May

    2015-05-04

    We report a metal-interconnection-free integration scheme for InGaN/GaN light emitting diodes (LEDs) and AlGaN/GaN high electron mobility transistors (HEMTs) by combining selective epi removal (SER) and selective epitaxial growth (SEG) techniques. SER of HEMT epi was carried out first to expose the bottom unintentionally doped GaN buffer and the sidewall GaN channel. A LED structure was regrown in the SER region with the bottom n-type GaN layer (n-electrode of the LED) connected to the HEMTs laterally, enabling monolithic integration of the HEMTs and LEDs (HEMT-LED) without metal-interconnection. In addition to saving substrate real estate, minimal interface resistance between the regrown n-type GaN and the HEMT channel is a significant improvement over metal-interconnection. Furthermore, excellent off-state leakage characteristics of the driving transistor can also be guaranteed in such an integration scheme.

  16. Georgia Hosts Multi-Agency Waste Isolation Pilot Plant Transportation Exercise

    Energy.gov [DOE]

    COVINGTON, Ga. – Emergency personnel throughout the U.S. who respond in the event of a potential accident involving radioactive waste shipments take part in mock training scenarios to help them prepare for an actual incident.

  17. Superfund at work: Hazardous waste cleanup efforts nationwide, Spring 1993 (Powersville site profile, Peach County, Georgia)

    SciTech Connect

    Not Available

    1993-01-01

    The US Environmental Protection Agency (EPA) encountered much more than a municipal landfill at the Powersville site in Peach County, Georgia. Contamination from improperly dumped hazardous wastes and pesticides tainted an old quarry used for household garbage. Chemicals migrating into area ground water threatened local drinking water supplies. To address these issues, EPA's Superfund program designed a cleanup strategy that included: negotiating with the county and chemical companies to contain the hazardous wastes on site underneath a protective cover; investigating reports of drinking water contamination and extending municipal water lines to affected residents; and conducting a tailored community relations program to inform and educate residents about the site.

  18. ,"Georgia Natural Gas Imports Price All Countries (Dollars per Thousand Cubic Feet)"

    Energy Information Administration (EIA) (indexed site)

    Price All Countries (Dollars per Thousand Cubic Feet)" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","Georgia Natural Gas Imports Price All Countries (Dollars per Thousand Cubic Feet)",1,"Annual",2015 ,"Release Date:","10/31/2016" ,"Next Release Date:","11/30/2016"

  19. ,"Georgia Natural Gas Imports from All Countries (Million Cubic Feet)"

    Energy Information Administration (EIA) (indexed site)

    from All Countries (Million Cubic Feet)" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","Georgia Natural Gas Imports from All Countries (Million Cubic Feet)",1,"Annual",2015 ,"Release Date:","10/31/2016" ,"Next Release Date:","11/30/2016" ,"Excel File

  20. ,"Georgia Natural Gas Input Supplemental Fuels (MMcf)"

    Energy Information Administration (EIA) (indexed site)

    Input Supplemental Fuels (MMcf)" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","Georgia Natural Gas Input Supplemental Fuels (MMcf)",1,"Annual",2015 ,"Release Date:","10/31/2016" ,"Next Release Date:","11/30/2016" ,"Excel File Name:","na1400_sga_2a.xls"

  1. ,"Georgia Natural Gas LNG Storage Net Withdrawals (MMcf)"

    Energy Information Administration (EIA) (indexed site)

    Net Withdrawals (MMcf)" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","Georgia Natural Gas LNG Storage Net Withdrawals (MMcf)",1,"Annual",2015 ,"Release Date:","10/31/2016" ,"Next Release Date:","11/30/2016" ,"Excel File Name:","na1350_sga_2a.xls"

  2. ,"Georgia Natural Gas Underground Storage Injections All Operators (MMcf)"

    Energy Information Administration (EIA) (indexed site)

    Injections All Operators (MMcf)" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","Georgia Natural Gas Underground Storage Injections All Operators (MMcf)",1,"Annual",1975 ,"Release Date:","10/31/2016" ,"Next Release Date:","11/30/2016" ,"Excel File

  3. ,"Georgia Natural Gas Underground Storage Net Withdrawals All Operators (MMcf)"

    Energy Information Administration (EIA) (indexed site)

    Net Withdrawals All Operators (MMcf)" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","Georgia Natural Gas Underground Storage Net Withdrawals All Operators (MMcf)",1,"Annual",1975 ,"Release Date:","10/31/2016" ,"Next Release Date:","11/30/2016" ,"Excel File

  4. ,"Georgia Natural Gas Vehicle Fuel Price (Dollars per Thousand Cubic Feet)"

    Energy Information Administration (EIA) (indexed site)

    Price (Dollars per Thousand Cubic Feet)" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","Georgia Natural Gas Vehicle Fuel Price (Dollars per Thousand Cubic Feet)",1,"Annual",2012 ,"Release Date:","10/31/2016" ,"Next Release Date:","11/30/2016" ,"Excel File

  5. Appearance Results from MiniBooNE Georgia Karagiorgi Columbia University

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Appearance Results from MiniBooNE Georgia Karagiorgi Columbia University WIN'11 - Cape Town, South Africa 2 Outline of this talk: -- The LSND excess signal: Evidence for high-Δm 2 oscillations -- The MiniBooNE experiment -- MiniBooNE neutrino mode oscillation results: LSND signature refuted -- MiniBooNE antineutrino mode oscillation results: LSND signature confrmed ? -- Light sterile neutrino oscillations: Where we stand today -- Future searches: MiniBooNE, MicroBooNE 1993 -1998 1998 2001

  6. Carrier quenching in InGaP/GaAs double heterostructures

    SciTech Connect

    Wells, Nathan P. Driskell, Travis U.; Hudson, Andrew I.; LaLumondiere, Stephen D.; Lotshaw, William T.; Forbes, David V.; Hubbard, Seth M.

    2015-08-14

    Photoluminescence measurements on a series of GaAs double heterostructures demonstrate a rapid quenching of carriers in the GaAs layer at irradiance levels below 0.1 W/cm{sup 2} in samples with a GaAs-on-InGaP interface. These results indicate the existence of non-radiative defect centers at or near the GaAs-on-InGaP interface, consistent with previous reports showing the intermixing of In and P when free As impinges on the InGaP surface during growth. At low irradiance, these defect centers can lead to sub-ns carrier lifetimes. The defect centers involved in the rapid carrier quenching can be saturated at higher irradiance levels and allow carrier lifetimes to reach hundreds of nanoseconds. To our knowledge, this is the first report of a nearly three orders of magnitude decrease in carrier lifetime at low irradiance in a simple double heterostructure. Carrier quenching occurs at irradiance levels near the integrated Air Mass Zero (AM0) and Air Mass 1.5 (AM1.5) solar irradiance. Additionally, a lower energy photoluminescence band is observed both at room and cryogenic temperatures. The temperature and time dependence of the lower energy luminescence is consistent with the presence of an unintentional InGaAs or InGaAsP quantum well that forms due to compositional mixing at the GaAs-on-InGaP interface. Our results are of general interest to the photovoltaic community as InGaP is commonly used as a window layer in GaAs based solar cells.

  7. Accelerated aging of GaAs concentrator solar cells

    SciTech Connect

    Gregory, P.E.

    1982-04-01

    An accelerated aging study of AlGaAs/GaAs solar cells has been completed. The purpose of the study was to identify the possible degradation mechanisms of AlGaAs/GaAs solar cells in terrestrial applications. Thermal storage tests and accelerated AlGaAs corrosion studies were performed to provide an experimental basis for a statistical analysis of the estimated lifetime. Results of this study suggest that a properly designed and fabricated AlGaAs/GaAs solar cell can be mechanically rugged and environmentally stable with projected lifetimes exceeding 100 years.

  8. Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures

    SciTech Connect

    Kuppulingam, B. Singh, Shubra Baskar, K.

    2014-04-24

    Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

  9. Zinc blende GaAs films grown on wurtzite GaN/sapphire templates

    SciTech Connect

    Chaldyshev, V.V.; Nielsen, B.; Mendez, E.E.; Musikhin, Yu.G.; Bert, N.A.; Ma, Zh.; Holden, Todd

    2005-03-28

    1-{mu}m-thick zinc-blende GaAs (111) films were grown by molecular-beam epitaxy on wurtzite GaN/sapphire (0001) templates. In spite of a {approx}20% lattice mismatch, epitaxial growth was realized, so that the GaAs films showed good adhesion and their surface had a larger mirror-like area with an average surface roughness of 10 nm. Transmission electron microscopy revealed a flat and abrupt epitaxial GaAs/GaN interface with some nanocavities and a large number of dislocations. Reasonably good crystalline quality of the GaAs films was confirmed by Raman characterization. Spectroscopic ellipsometry showed sharp interference fringes and characteristic parameters in the range of 0.75-5.3 eV. Photoluminescence study revealed extended band tails and dominance of non-radiative carrier recombination.

  10. High-performance InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor

    SciTech Connect

    Tsai, J.-H. Chiu, S.-Y.; Lour, W.-S.; Guo, D.-F.

    2009-07-15

    In this article, a novel InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor is first demonstrated. Though the valence band discontinuity at InGaP/GaAs heterojunction is relatively large, the addition of a {delta}-doped sheet between two spacer layers at the emitter-base (E-B) junction effectively eliminates the potential spike and increases the confined barrier for electrons, simultaneously. Experimentally, a high current gain of 25 and a relatively low E-B offset voltage of 60 mV are achieved. The offset voltage is much smaller than the conventional InGaP/GaAs pnp HBT. The proposed device could be used for linear amplifiers and low-power complementary integrated circuit applications.

  11. Oxidation of ultrathin GaSe

    SciTech Connect

    Thomas Edwin Beechem; McDonald, Anthony E.; Ohta, Taisuke; Howell, Stephen W.; Kalugin, Nikolai G.; Kowalski, Brian M.; Brumbach, Michael T.; Spataru, Catalin D.; Pask, Jesse A.

    2015-10-26

    Oxidation of exfoliated gallium selenide (GaSe) is investigated through Raman, photoluminescence, Auger, and X-ray photoelectron spectroscopies. Photoluminescence and Raman intensity reductions associated with spectral features of GaSe are shown to coincide with the emergence of signatures emanating from the by-products of the oxidation reaction, namely, Ga2Se3 and amorphous Se. Furthermore, photoinduced oxidation is initiated over a portion of a flake highlighting the potential for laser based patterning of two-dimensional heterostructures via selective oxidation.

  12. Oxidation of ultrathin GaSe

    DOE PAGES [OSTI]

    Thomas Edwin Beechem; McDonald, Anthony E.; Ohta, Taisuke; Howell, Stephen W.; Kalugin, Nikolai G.; Kowalski, Brian M.; Brumbach, Michael T.; Spataru, Catalin D.; Pask, Jesse A.

    2015-10-26

    Oxidation of exfoliated gallium selenide (GaSe) is investigated through Raman, photoluminescence, Auger, and X-ray photoelectron spectroscopies. Photoluminescence and Raman intensity reductions associated with spectral features of GaSe are shown to coincide with the emergence of signatures emanating from the by-products of the oxidation reaction, namely, Ga2Se3 and amorphous Se. Furthermore, photoinduced oxidation is initiated over a portion of a flake highlighting the potential for laser based patterning of two-dimensional heterostructures via selective oxidation.

  13. Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire

    SciTech Connect

    Tatebayashi, J. Ota, Y.; Ishida, S.; Nishioka, M.; Iwamoto, S.; Arakawa, Y.

    2014-09-08

    We demonstrate a highly uniform, dense stack of In{sub 0.22}Ga{sub 0.78}As/GaAs quantum dot (QD) structures in a single GaAs nanowire (NW). The size (and hence emission energy) of individual QD is tuned by careful control of the growth conditions based on a diffusion model of morphological evolution of NWs and optical characterization. By carefully tailoring the emission energies of individual QD, dot-to-dot inhomogeneous broadening of QD stacks in a single NW can be as narrow as 9.3?meV. This method provides huge advantages over traditional QD stack using a strain-induced Stranski-Krastanow growth scheme. We show that it is possible to fabricate up to 200 uniform QDs in single GaAs NWs using this growth technique without degradation of the photoluminescence intensity.

  14. Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT

    SciTech Connect

    Das, Palash Biswas, Dhrubes

    2014-04-24

    The self consistent solution of Schrodinger and Poisson equations is used along with the total charge depletion model and applied with a novel approach of composite AlGaN barrier based HEMT heterostructure. The solution leaded to a completely new analytical model for Fermi energy level vs. 2DEG carrier concentration. This was eventually used to demonstrate a new analytical model for the temperature dependent 2DEG carrier concentration in AlGaN/GaN HEMT.

  15. Ultra-high frequency photoconductivity decay in GaAs/Ge/GaAs double heterostructure grown by molecular beam epitaxy

    SciTech Connect

    Hudait, M. K.; Zhu, Y.; Johnston, S. W.; Maurya, D.; Priya, S.; Umbel, R.

    2013-03-04

    GaAs/Ge/GaAs double heterostructures (DHs) were grown in-situ using two separate molecular beam epitaxy chambers. High-resolution x-ray rocking curve demonstrates a high-quality GaAs/Ge/GaAs heterostructure by observing Pendelloesung oscillations. The kinetics of the carrier recombination in Ge/GaAs DHs were investigated using photoconductivity decay measurements by the incidence excitation from the front and back side of 15 nm GaAs/100 nm Ge/0.5 {mu}m GaAs/(100)GaAs substrate structure. High-minority carrier lifetimes of 1.06-1.17 {mu}s were measured when excited from the front or from the back of the Ge epitaxial layer, suggests equivalent interface quality of GaAs/Ge and Ge/GaAs. Wavelength-dependent minority carrier recombination properties are explained by the wavelength-dependent absorption coefficient of Ge.

  16. Magnetic coupling in ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers

    SciTech Connect

    Wang, M.; Wadley, P.; Campion, R. P.; Rushforth, A. W.; Edmonds, K. W.; Gallagher, B. L.; Charlton, T. R.; Kinane, C. J.; Langridge, S.

    2015-08-07

    We report on a study of ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers using magnetometry and polarized neutron reflectivity (PNR). From depth-resolved characterization of the magnetic structure obtained by PNR, we concluded that the (Ga,Mn)As and (Al,Ga,Mn)As layers have in-plane and perpendicular-to-plane magnetic easy axes, respectively, with weak interlayer coupling. Therefore, the layer magnetizations align perpendicular to each other under low magnetic fields and parallel at high fields.

  17. EA-1963: Elba Liquefaction Project; Chatham, Hart, Jefferson, and Effingham Counties, Georgia, and Jasper County, South Carolina

    Energy.gov [DOE]

    Federal Energy Regulatory Commission (FERC) prepared an EA that assesses the potential environmental impacts of a proposal to add natural gas liquefaction and export capabilities at the existing Elba Liquefied Natural Gas Terminal near Savannah, Georgia. Information about this project is available on the FERC website (www.ferc.gov).

  18. US SoAtl GA Site Consumption

    Annual Energy Outlook

    ... Yes Yes No No 0% 20% 40% 60% 80% 100% US GA No Car CAR IS PARKED WITHIN 20 FT OF ELECTRICAL OUTLET More highlights from RECS on housing characteristics and energy-related ...

  19. Princeton Plasma Physics Lab - General Atomics (GA)

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    general-atomics-ga General Atomics en The Scorpion's Strategy: "Catch and Subdue" http:www.pppl.govnode1132

  20. GaTe semiconductor for radiation detection

    DOEpatents

    Payne, Stephen A.; Burger, Arnold; Mandal, Krishna C.

    2009-06-23

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  1. GaP ring-like nanostructures on GaAs (100) with In{sub 0.15}Ga{sub 0.85}As compensation layers

    SciTech Connect

    Prongjit, Patchareewan Pankaow, Naraporn Boonpeng, Poonyasiri Thainoi, Supachok Panyakeow, Somsak Ratanathammaphan, Somchai

    2013-12-04

    We present the fabrication of GaP ring-like nanostructures on GaAs (100) substrates with inserted In{sub 0.15}Ga{sub 0.85}As compensation layers. The samples are grown by droplet epitaxy using solid-source molecular beam epitaxy. The dependency of nanostructural and optical properties of GaP nanostructures on In{sub 0.15}Ga{sub 0.85}As layer thickness is investigated by ex-situ atomic force microscope (AFM) and photoluminescence (PL). It is found that the characteristics of GaP ring-like structures on GaAs strongly depend on the In{sub 0.15}Ga{sub 0.85}As layer thickness.

  2. Georgia Natural Gas Vehicle Fuel Price (Dollars per Thousand Cubic Feet)

    Energy Information Administration (EIA) (indexed site)

    Vehicle Fuel Price (Dollars per Thousand Cubic Feet) Georgia Natural Gas Vehicle Fuel Price (Dollars per Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1990's 3.54 4.07 3.86 3.86 4.14 4.10 2000's -- -- 13.05 12.93 12.91 12.11 2010's 5.17 5.57 14.51 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 10/31/2016 Next Release Date: 11/30/2016 Referring Pages:

  3. Georgia Natural Gas Delivered to Commercial Consumers for the Account of

    Energy Information Administration (EIA) (indexed site)

    Others (Million Cubic Feet) Delivered to Commercial Consumers for the Account of Others (Million Cubic Feet) Georgia Natural Gas Delivered to Commercial Consumers for the Account of Others (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1980's 1,067 3,418 5,176 1990's 5,721 6,395 6,389 5,487 4,304 3,663 3,646 6,211 9,078 16,996 2000's 48,726 40,531 38,395 39,611 44,025 42,112 38,204 38,967 41,555 43,845 2010's 49,157 46,512 42,971 46,494

  4. Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices

    SciTech Connect

    Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J.; Charache, G.W.

    1997-05-01

    The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

  5. Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100)

    SciTech Connect

    Stark, Christoph J. M.; Detchprohm, Theeradetch; Wetzel, Christian, E-mail: wetzel@ieee.org [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States) [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Future Chips Constellation, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180 (United States); Lee, S. C.; Brueck, S. R. J. [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States)] [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States); Jiang, Y.-B. [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)] [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

    2013-12-02

    GaInN/GaN light-emitting diodes free of piezoelectric polarization were prepared on standard electronic-grade Si(100) substrates. Micro-stripes of GaN and GaInN/GaN quantum wells in the cubic crystal structure were grown on intersecting (111) planes of microscale V-grooved Si in metal-organic vapor phase epitaxy, covering over 50% of the wafer surface area. Crystal phases were identified in electron back-scattering diffraction. A cross-sectional analysis reveals a cubic structure virtually free of line defects. Electroluminescence over 20 to 100??A is found fixed at 487?nm (peak), 516?nm (dominant). Such structures therefore should allow higher efficiency, wavelength-stable light emitters throughout the visible spectrum.

  6. Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires

    DOE PAGES [OSTI]

    Song, Erdong; Li, Qiming; Swartzentruber, Brian; Pan, Wei; Wang, George T.; Martinez, Julio A.

    2015-11-25

    The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN coremore » of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. As a result, selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.« less

  7. Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires

    SciTech Connect

    Song, Erdong; Li, Qiming; Swartzentruber, Brian; Pan, Wei; Wang, George T.; Martinez, Julio A.

    2015-11-25

    The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN core of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. As a result, selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.

  8. InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

    SciTech Connect

    Krishnamoorthy, Sriram E-mail: rajan@ece.osu.edu; Akyol, Fatih; Rajan, Siddharth E-mail: rajan@ece.osu.edu

    2014-10-06

    InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450 nm) light emitting diode. A voltage drop of 5.3 V at 100 mA, forward resistance of 2 × 10{sup −2} Ω cm{sup 2}, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5 × 10{sup −4} Ω cm{sup 2} was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. The depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.

  9. SREL Reprint #3370

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    70 Evaporative water loss rates of four species of aquatic turtles from the Coastal Plain of the southeastern United States Chris M. Murphy1, Tracey D. Tuberville2, John C. Maerz1, and Kimberly M. Andrews2,3 1Warnell School of Forestry and Natural Resources, University of Georgia, Athens, Georgia USA 2Savannah River Ecology Lab, University of Georgia, Aiken, South Carolina USA 3Georgia Sea Turtle Center, Jekyll Island Authority, Jekyll Island, Georgia USA Abstract: Many isolated wetlands in the

  10. Structural and optical properties of InGaN--GaN nanowire heterostructures grown by molecular beam epitaxy

    SciTech Connect

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Hofling, S.; Worschech, L.; Grutzmacher, D.

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, μ-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

  11. Structural and optical properties of InGaN--GaN nanowire heterostructures grown by molecular beam epitaxy

    DOE PAGES [OSTI]

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Hofling, S.; et al

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaNmore » to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, μ-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.« less

  12. Structural and optical properties of InGaNGaN nanowire heterostructures grown by molecular beam epitaxy

    DOE PAGES [OSTI]

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Ho?fling, S.; et al

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaNmoreto higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.less

  13. Investigation of surface-plasmon coupled red light emitting InGaN/GaN multi-quantum well with Ag nanostructures coated on GaN surface

    SciTech Connect

    Li, Yi; Liu, Bin E-mail: rzhang@nju.edu.cn; Zhang, Rong E-mail: rzhang@nju.edu.cn; Xie, Zili; Zhuang, Zhe; Dai, JiangPing; Tao, Tao; Zhi, Ting; Zhang, Guogang; Chen, Peng; Ren, Fangfang; Zhao, Hong; Zheng, Youdou

    2015-04-21

    Surface-plasmon (SP) coupled red light emitting InGaN/GaN multiple quantum well (MQW) structure is fabricated and investigated. The centre wavelength of 5-period InGaN/GaN MQW structure is about 620?nm. The intensity of photoluminescence (PL) for InGaN QW with naked Ag nano-structures (NS) is only slightly increased due to the oxidation of Ag NS as compared to that for the InGaN QW. However, InGaN QW with Ag NS/SiO{sub 2} structure can evidently enhance the emission efficiency due to the elimination of surface oxide layer of Ag NS. With increasing the laser excitation power, the PL intensity is enhanced by 25%53% as compared to that for the SiO{sub 2} coating InGaN QW. The steady-state electric field distribution obtained by the three-dimensional finite-difference time-domain method is different for both structures. The proportion of the field distributed in the Ag NS for the GaN/Ag NS/SiO{sub 2} structure is smaller as compared to that for the GaN/naked Ag NS structure. As a result, the energy loss of localized SP modes for the GaN/naked Ag NS structure will be larger due to the absorption of Ag layer.

  14. Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission

    SciTech Connect

    Lekhal, K.; Damilano, B. De Mierry, P.; Venngus, P.; Ngo, H. T.; Rosales, D.; Gil, B.; Hussain, S.

    2015-04-06

    Yellow/amber (570600?nm) emitting In{sub x}Ga{sub 1?x}N/Al{sub y}Ga{sub 1?y}N/GaN multiple quantum wells (QWs) have been grown by metal organic chemical vapor deposition on GaN-on- sapphire templates. When the (Al,Ga)N thickness of the barrier increases, the room temperature photoluminescence is red-shifted while its yield increases. This is attributed to an increase of the QW internal electric field and an improvement of the material quality due to the compensation of the compressive strain of the In{sub x}Ga{sub 1?x}N QWs by the Al{sub y}Ga{sub 1?y}N layers, respectively.

  15. On strongly GA-convex functions and stochastic processes

    SciTech Connect

    Bekar, Nurgl Okur; Akdemir, Hande Gnay; ??can, ?mdat

    2014-08-20

    In this study, we introduce strongly GA-convex functions and stochastic processes. We provide related well-known Kuhn type results and Hermite-Hadamard type inequality for strongly GA-convex functions and stochastic processes.

  16. Few-hole double quantum dot in an undoped GaAs/AlGaAs heterostructure

    SciTech Connect

    Tracy, L. A.; Hargett, T. W.; Reno, J. L.

    2014-03-24

    We demonstrate a hole double quantum dot in an undoped GaAs/AlGaAs heterostructure. The interdot coupling can be tuned over a wide range, from formation of a large single dot to two well-isolated quantum dots. Using charge sensing, we show the ability to completely empty the dot of holes and control the charge occupation in the few-hole regime. The device should allow for control of individual hole spins in single and double quantum dots in GaAs.

  17. InGaAs/GaAs quantum dot interdiffiusion induced by cap layer overgrowth

    SciTech Connect

    Jasinski, J.; Babinski, A.; Czeczott, M.; Bozek, R.

    2000-06-28

    The effect of thermal treatment during and after growth of InGaAs/GaAs quantum dot (QD) structures was studied. Transmission electron microscopy and atomic force microscopy confirmed the presence of interacting QDs, as was expected from analysis of temperature dependence of QD photoluminescence (PL) peak. The results indicate that the effect of post-growth annealing can be similar to the effect of elevated temperature of capping layer growth. Both, these thermal treatments can lead to a similar In and Ga interdiffiusion resulting in a similar blue-shift of QD PL peak.

  18. Optical spectroscopy of quantum confined states in GaAs/AlGaAs quantum well tubes

    SciTech Connect

    Shi, Teng; Fickenscher, Melodie; Smith, Leigh; Jackson, Howard; Yarrison-Rice, Jan; Gao, Qiang; Tan, Hoe; Jagadish, Chennupati; Etheridge, Joanne; Wong, Bryan M.

    2013-12-04

    We have investigated the quantum confinement of electronic states in GaAs/Al{sub x}Ga{sub 1?x}As nanowire heterostructures which contain radial GaAs quantum wells of either 4nm or 8nm. Photoluminescence and photoluminescence excitation spectroscopy are performed on single nanowires. We observed emission and excitation of electron and hole confined states. Numerical calculations of the quantum confined states using the detailed structural information on the quantum well tubes show excellent agreement with these optical results.

  19. Three-junction solar cells comprised of a thin-film GaInP/GaAs tandem cell mechanically stacked on a Si cell

    SciTech Connect

    Yazawa, Y.; Tamura, K.; Watahiki, S.; Kitatani, T.; Ohtsuka, H.; Warabisako, T.

    1997-12-31

    Three-junction tandem solar cells were fabricated by mechanical stacking of a thin-film GaInP/GaAs monolithic tandem cell and a Si cell. The epitaxial lift-off (ELO) technique was used for the thinning of GaInP/GaAs tandem cells. Both spectral responses of the GaInP top cell and the GaAs middle cell in the thin-film GaInP/GaAs monolithic tandem cell were conserved. The Si cell performance has been improved by reducing the absorption loss in the GaAs substrate.

  20. Georgia-Pacific Palatka Plant Uses Thermal Pinch Analysis and Evaluates Water Reduction in Plant-Wide Energy Assessment

    SciTech Connect

    2002-12-01

    This OIT BestPractices Case Study describes the methods and results used in a plant-wide assessment at a Georgia-Pacific paper mill in Palatka, FL. Assessment personnel recommended several projects, which, if implemented, have the potential to save the plant more than 729,000 MMBtu per year and $2.9 million per year. In addition, the plant could reduce water use by 2,100 gallons per minute.

  1. Summary of Needs and Opportunities from the 2011 Residential Energy Efficiency Stakeholders Meeting: Atlanta, Georgia -- March 16-18, 2011

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Needs and Opportunities from the 2011 Residential Energy Efficiency Stakeholders Meeting Atlanta, Georgia - March 16-18, 2011 May 2011 ii NOTICE This report was prepared as an account of work sponsored by an agency of the United States government. Neither the United States government nor any agency thereof, nor any of their employees, makes any warranty, express or implied, or assumes any legal liability or responsibility for the accuracy, completeness, or usefulness of any information,

  2. GaAs photoconductive semiconductor switch

    DOEpatents

    Loubriel, G.M.; Baca, A.G.; Zutavern, F.J.

    1998-09-08

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device is disclosed. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices. 5 figs.

  3. GaAs photoconductive semiconductor switch

    DOEpatents

    Loubriel, Guillermo M.; Baca, Albert G.; Zutavern, Fred J.

    1998-01-01

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

  4. GaN: Defect and Device Issues

    SciTech Connect

    Pearton, S.J.; Ren, F.; Shul, R.J.; Zolper, J.C.

    1998-11-09

    The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

  5. ,"Georgia Natural Gas Industrial Price (Dollars per Thousand Cubic Feet)"

    Energy Information Administration (EIA) (indexed site)

    Annual",2015 ,"Release Date:","10/31/2016" ,"Next Release Date:","11/30/2016" ,"Excel File Name:","n3035ga3a.xls" ,"Available from Web Page:","http://tonto.eia.gov/dnav/ng/hist/n3035ga3a.htm" ,"Source:","Energy Information Administration" ,"For Help, Contact:","infoctr@eia.doe.gov" ,,"(202) 586-8800",,,"10/28/2016 9:35:07 PM" "Back to

  6. ,"Georgia Natural Gas Industrial Price (Dollars per Thousand Cubic Feet)"

    Energy Information Administration (EIA) (indexed site)

    Monthly","8/2016" ,"Release Date:","10/31/2016" ,"Next Release Date:","11/30/2016" ,"Excel File Name:","n3035ga3m.xls" ,"Available from Web Page:","http://tonto.eia.gov/dnav/ng/hist/n3035ga3m.htm" ,"Source:","Energy Information Administration" ,"For Help, Contact:","infoctr@eia.doe.gov" ,,"(202) 586-8800",,,"10/28/2016 9:35:07 PM" "Back

  7. Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding

    SciTech Connect

    Tanabe, K.; Aiken, D. J.; Wanlass, M. W.; Morral, A. F.; Atwater, H. A.

    2006-01-01

    Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, while metamorphic growth inevitably results in less design flexibility and lower material quality than is desirable. The first direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs two-junction solar cell, is reported and demonstrates viability of direct wafer bonding for solar cell applications. The tandem cell open-circuit voltage was approximately the sum of the subcell open-circuit voltages. This achievement shows direct bonding enables us to construct lattice-mismatched III-V multijunction solar cells and is extensible to an ultrahigh efficiency InGaP/GaAs/InGaAsP/InGaAs four-junction cell by bonding a GaAs-based lattice-matched InGaP/GaAs subcell and an InP-based lattice-matched InGaAsP/InGaAs subcell. The interfacial resistance experimentally obtained for bonded GaAs/InP smaller than 0.10 Ohm-cm{sup 2} would result in a negligible decrease in overall cell efficiency of {approx}0.02%, under 1-sun illumination.

  8. Composition profiling of GaAs/AlGaAs quantum dots grown by droplet epitaxy

    SciTech Connect

    Bocquel, J.; Koenraad, P. M.; Giddings, A. D.; Prosa, T. J.; Larson, D. J.; Mano, T.

    2014-10-13

    Droplet epitaxy (DE) is a growth method which can create III-V quantum dots (QDs) whose optoelectronic properties can be accurately controlled through the crystallisation conditions. In this work, GaAs/AlGaAs DE-QDs have been analyzed with the complimentary techniques of cross-sectional scanning tunneling microscopy and atom probe tomography. Structural details and a quantitative chemical analysis of QDs of different sizes are obtained. Most QDs were found to be pure GaAs, while a small proportion exhibited high intermixing caused by a local etching process. Large QDs with a high aspect ratio were observed to have an Al-rich crown above the GaAs QD. This structure is attributed to differences in mobility of the cations during the capping phase of the DE growth.

  9. High-field quasi-ballistic transport in AlGaN/GaN heterostructures

    SciTech Connect

    Danilchenko, B. A.; Tripachko, N. A.; Belyaev, A. E.; Vitusevich, S. A. Hardtdegen, H.; Lth, H.

    2014-02-17

    Mechanisms of electron transport formation in 2D conducting channels of AlGaN/GaN heterostructures in extremely high electric fields at 4.2?K have been studied. Devices with a narrow constriction for the current flow demonstrate high-speed electron transport with an electron velocity of 6.8??10{sup 7}?cm/s. Such a velocity is more than two times higher than values reported for conventional semiconductors and about 15% smaller than the limit value predicted for GaN. Superior velocity is attained in the channel with considerable carrier reduction. The effect is related to a carrier runaway phenomenon. The results are in good agreement with theoretical predictions for GaN-based materials.

  10. InGaAs/GaAs (110) quantum dot formation via step meandering

    SciTech Connect

    Diez-Merino, Laura; Tejedor, Paloma

    2011-07-01

    InGaAs (110) semiconductor quantum dots (QDs) offer very promising prospects as a material base for a new generation of high-speed spintronic devices, such as single electron transistors for quantum computing. However, the spontaneous formation of InGaAs QDs is prevented by two-dimensional (2D) layer-by-layer growth on singular GaAs (110) substrates. In this work we have studied, by using atomic force microscopy and photoluminescence spectroscopy (PL), the growth of InGaAs/GaAs QDs on GaAs (110) stepped substrates by molecular beam epitaxy (MBE), and the modification of the adatom incorporation kinetics to surface steps in the presence of chemisorbed atomic hydrogen. The as-grown QDs exhibit lateral dimensions below 100 nm and emission peaks in the 1.35-1.37 eV range. It has been found that a step meandering instability derived from the preferential attachment of In adatoms to [110]-step edges relative to [11n]-type steps plays a key role in the destabilization of 2D growth that leads to 3D mound formation on both conventional and H-terminated vicinal substrates. In the latter case, the driving force for 3D growth via step meandering is enhanced by H-induced upward mass transport in addition to the lower energy cost associated with island formation on H-terminated substrates, which results in a high density array of InGaAs/GaAs dots selectively nucleated on the terrace apices with reduced lateral dimensions and improved PL efficiency relative to those of conventional MBE-grown samples.

  11. AlGaAs/GaAs photovoltaic converters for high power narrowband radiation

    SciTech Connect

    Khvostikov, Vladimir; Kalyuzhnyy, Nikolay; Mintairov, Sergey; Potapovich, Nataliia; Shvarts, Maxim; Sorokina, Svetlana; Andreev, Viacheslav; Luque, Antonio

    2014-09-26

    AlGaAs/GaAs-based laser power PV converters intended for operation with high-power (up to 100 W/cm{sup 2}) radiation were fabricated by LPE and MOCVD techniques. Monochromatic (? = 809 nm) conversion efficiency up to 60% was measured at cells with back surface field and low (x = 0.2) Al concentration 'window'. Modules with a voltage of 4 V and the efficiency of 56% were designed and fabricated.

  12. Sheet resistance under Ohmic contacts to AlGaN/GaN heterostructures

    SciTech Connect

    Hajłasz, M.; Donkers, J. J. T. M.; Sque, S. J.; Heil, S. B. S.; Gravesteijn, D. J.; Rietveld, F. J. R.; Schmitz, J.

    2014-06-16

    For the determination of specific contact resistance in semiconductor devices, it is usually assumed that the sheet resistance under the contact is identical to that between the contacts. This generally does not hold for contacts to AlGaN/GaN structures, where an effective doping under the contact is thought to come from reactions between the contact metals and the AlGaN/GaN. As a consequence, conventional extraction of the specific contact resistance and transfer length leads to erroneous results. In this Letter, the sheet resistance under gold-free Ti/Al-based Ohmic contacts to AlGaN/GaN heterostructures on Si substrates has been investigated by means of electrical measurements, transmission electron microscopy, and technology computer-aided design simulations. It was found to be significantly lower than that outside of the contact area; temperature-dependent electrical characterization showed that it exhibits semiconductor-like behavior. The increase in conduction is attributed to n-type activity of nitrogen vacancies in the AlGaN. They are thought to form during rapid thermal annealing of the metal stack when Ti extracts nitrogen from the underlying semiconductor. The high n-type doping in the region between the metal and the 2-dimensional electron gas pulls the conduction band towards the Fermi level and enhances horizontal electron transport in the AlGaN. Using this improved understanding of the properties of the material underneath the contact, accurate values of transfer length and specific contact resistance have been extracted.

  13. On-sun concentrator performance of GaInP/GaAs tandem cells

    SciTech Connect

    Friedman, D.J.; Kurtz, S.R.; Sinha, K.; McMahon, W.E.; Olson, J.M.

    1996-05-01

    The GaInP/GaAs concentrator device has been adapted for and tested in a prototype {open_quotes}real-world{close_quotes} concentrator power system. The device achieved an on-sun efficiency of 28% {+-} 1% in the range of approximately 200-260 suns with device operating temperatures of 38{degrees}C to 42{degrees}C. The authors discuss ways of further improving this performance for future devices.

  14. Properties of (Ga,Mn)As codoped with Li

    SciTech Connect

    Miyakozawa, Shohei; Chen, Lin; Matsukura, Fumihiro; Ohno, Hideo

    2014-06-02

    We grow Li codoped (Ga,Mn)As layers with nominal Mn composition up to 0.15 by molecular beam epitaxy. The layers before and after annealing are characterized by x-ray diffraction, transport, magnetization, and ferromagnetic resonance measurements. The codoping with Li reduces the lattice constant and electrical resistivity of (Ga,Mn)As after annealing. We find that (Ga,Mn)As:Li takes similar Curie temperature to that of (Ga,Mn)As, but with pronounced magnetic moments and in-plane magnetic anisotropy, indicating that the Li codoping has nontrivial effects on the magnetic properties of (Ga,Mn)As.

  15. Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure

    SciTech Connect

    Chowdhury, S; Mishra, UK

    2013-10-01

    Power conversion losses are endemic in all areas of electricity consumption, including motion control, lighting, air conditioning, and information technology. Si, the workhorse of the industry, has reached its material limits. Increasingly, the lateral AlGaN/GaN HEMT based on gallium nitride (GaN-on-Si) is becoming the device of choice for medium power electronics as it enables high-power conversion efficiency and reduced form factor at attractive pricing for wide market penetration. The reduced form factor enabled by high-efficiency operation at high frequency further enables significant system price reduction because of savings in bulky extensive passive elements and heat sink costs. The high-power market, however, still remains unaddressed by lateral GaN devices. The current and voltage demand for high power conversion application makes the chip area in a lateral topology so large that it becomes more difficult to manufacture. Vertical GaN devices would play a big role alongside of silicon carbide (SiC) to address the high power conversion needs. In this paper, the development, performance, and status of lateral and vertical GaN devices are discussed.

  16. GaNPAs Solar Cells Lattice-Matched To GaP: Preprint

    SciTech Connect

    Geisz, J. F.; Friedman, D. J.; Kurtz, S.

    2002-05-01

    This conference paper describes the III-V semiconductors grown on silicon substrates are very attractive for lower-cost, high-efficiency multijunction solar cells, but lattice-mismatched alloys that result in high dislocation densities have been unable to achieve satisfactory performance. GaNxP1-x-yAsy is a direct-gap III-V alloy that can be grown lattice-matched to Si when y= 4.7x - 0.1. We propose the use of lattice-matched GaNPAs on silicon for high-efficiency multijunction solar cells. We have grown GaNxP1-x-yAsy on GaP (with a similar lattice constant to silicon) by metal-organic chemical vapor phase epitaxy with direct band-gaps in the range of 1.5 to 2.0 eV. We demonstrate the performance of single-junction GaNxP1-x-yAsy solar cells grown on GaP substrates and discuss the prospects for the development of monolithic high-efficiency multijunction solar cells based on silicon substrates.

  17. Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence

    SciTech Connect

    Ji, Hai-Ming; Liang, Baolai Simmonds, Paul J.; Juang, Bor-Chau; Yang, Tao; Young, Robert J.; Huffaker, Diana L.

    2015-03-09

    We investigate the photoluminescence (PL) properties of a hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot (QD) structure grown in a GaAs matrix by molecular beam epitaxy. This hybrid QD structure exhibits more intense PL with a broader spectral range, compared with control samples that contain only InAs or GaSb QDs. This enhanced PL performance is attributed to additional electron and hole injection from the type-I InAs QDs into the adjacent type-II GaSb QDs. We confirm this mechanism using time-resolved and power-dependent PL. These hybrid QD structures show potential for high efficiency QD solar cell applications.

  18. Reactive codoping of GaAlInP compound semiconductors

    DOEpatents

    Hanna, Mark Cooper; Reedy, Robert

    2008-02-12

    A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

  19. Health-hazard evaluation report HETA 86-469-2189, James River Corporation, Newnan, Georgia

    SciTech Connect

    Sinks, T.

    1992-03-01

    In response to a request from OSHA, a possible cancer cluster was investigated at the James River Corporation (SIC-2657), Newnan, Georgia. The paperboard packaging facility had been in operation for over 30 years. A retrospective cohort mortality study of 2050 workers employed at the facility between 1957 and 1988 was conducted. As of the study date, 141 workers were deceased, 1705 were alive, and 204 had been lost to follow-up. Overall mortality was similar to that expected as was mortality from diseases of the heart, accidents, and violence. The Standardized Mortality Ratios for all cancers was less than expected. Three workers with bladder cancer and six with kidney cancer were identified. No increased risk of bladder cancer was determined. The risk of kidney cancer was increased. The excess risk was associated with overall duration of employment but was not limited to any single department or work process. The author concludes that workers at the facility had an increased rate of kidney cancer. The author recommends measures to reduce exposures to inks containing pigments made from aromatic amines. Personal protective equipment should not be considered a substitute for adequate engineering controls. Follow-up on the cohort should continue.

  20. Chiyoda Thoroughbred CT-121 clean coal project at Georgia Power`s Plant Yates

    SciTech Connect

    Burford, D.P.

    1997-12-31

    The Chiyoda Thoroughbred CT-121 flue gas desulfurization (FGD) process at Georgia Power`s Plant Yates completed a two year demonstration of its capabilities in late 1994 under both high- and low-particulate loading conditions. This $43 million demonstration was co-funded by Southern Company, the Electric Power Research Institute and the DOE under the auspices of the US Department of Energy`s Round II Innovative Clean Coal Technology (ICCT) program. The focus of the Yates Project was to demonstrate several cost-saving modifications to Chiyoda`s already efficient CT-121 process. These modifications included: the extensive use of fiberglass reinforced plastics (FRP) in the construction of the scrubber vessel and other associated vessels, the elimination of flue gas reheat through the use of an FRP wet chimney, and reliable operation without a spare absorber module. This paper focuses on the testing results from the last trimester of the second phase of testing (high-ash loading). Specifically, operation under elevated ash loading conditions, the effects of low- and high-sulfur coal, air toxics verification testing results and unexpected improvements in byproduct gypsum quality are discussed.

  1. Pyrococcus Furiosus Genome Supplementary Data from the Adams Laboratory at the University of Georgia

    DOE Data Explorer

    Adams, Michael W.W.; Weinberg, Michael V.; Schut, Gerrit J.; Brehm, Scott; Datta, Susmitta; Zhou, J.

    The research in the Adams Laboratory focuses on the physiology of hyperthermophilic organisms with an emphasis on metal-containing enzymes in the hyperthermophilic marine archaeon Pyrococcus furiosus. Three of the many articles from this University of Georgia lab have supplementary materials that are available on the Adams Lab website. All three sets of data are Open Reading Frames (ORFs) used for DNA microarray experiments and the changes in signal intensities. The full citations for the three articles are: 1) Weinberg, M. V., Schut, G. J., Brehm, S., Datta, S. and Adams, M. W. W. (2005) Cold shock of a hyperthermophilic archaeon: Pyrococcus furiosus exhibits multiple responses to a suboptimal growth temperature with a key role for membrane-bound glycoproteins. J Bacteriol. 187, 336-348; 2) Schut, G. J., Brehm, S. D., Datta, S. and Adams, M. W. W. (2003) "Whole genome DNA microarray analysis of a hyperthermophile and an archaeon: Pyrococcus furiosus grown on carbohydrates or peptides" J. Bacteriol. 185, 3935-3947; Schut, G. J., Zhou, J. and Adams, M. W. W. (2001) "DNA microarray analysis of the hyperthermophilic archaeon Pyrococcus furiosus evidence for a new type of sulfur-reducing enzyme" J. Bacteriol. 183, 7027-7036. Note that these articles are copyrighted by the Journal of Bacteriology.

  2. Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells

    SciTech Connect

    Paquette, B.; DeVita, M.; Turala, A.; Kolhatkar, G.; Boucherif, A.; Jaouad, A.; Aimez, V.; Ars, R.; Wilkins, M.; Wheeldon, J. F.; Walker, A. W.; Hinzer, K.; Fafard, S.

    2013-09-27

    AlGaAs/GaAs tunnel junctions for use in high concentration multijunction solar cells were designed and grown by chemical beam epitaxy (CBE) using trimethyl aluminium (TMA) as the p-dopant source for the AlGaAs active layer. Controlled hole concentration up to 4?10{sup 20} cm{sup ?3} was achieved through variation in growth parameters. Fabricated tunnel junctions have a peak tunneling current up to 6140 A/cm{sup 2}. These are suitable for high concentration use and outperform GaAs/GaAs tunnel junctions.

  3. Study of the effects of GaN buffer layer quality on the dc characteristics of AlGaN/GaN high electron mobility transistors

    DOE PAGES [OSTI]

    Ahn, Shihyun; Zhu, Weidi; Dong, Chen; Le, Lingcong; Hwang, Ya-Hsi; Kim, Byung-Jae; Ren, Fan; Pearton, Stephen J.; Lind, Aaron G.; Jones, Kevin S.; et al

    2015-04-21

    Here we studied the effect of buffer layer quality on dc characteristics of AlGaN/GaN high electron mobility (HEMTs). AlGaN/GaN HEMT structures with 2 and 5 μm GaN buffer layers on sapphire substrates from two different vendors with the same Al concentration of AlGaN were used. The defect densities of HEMT structures with 2 and 5 μm GaN buffer layer were 7 × 109 and 5 × 108 cm₋2, respectively, as measured by transmission electron microscopy. There was little difference in drain saturation current or in transfer characteristics in HEMTs on these two types of buffer. However, there was no dispersionmore » observed on the nonpassivated HEMTs with 5 μm GaN buffer layer for gate-lag pulsed measurement at 100 kHz, which was in sharp contrast to the 71% drain current reduction for the HEMT with 2 μm GaN buffer layer.« less

  4. Study of the effects of GaN buffer layer quality on the dc characteristics of AlGaN/GaN high electron mobility transistors

    SciTech Connect

    Ahn, Shihyun; Zhu, Weidi; Dong, Chen; Le, Lingcong; Hwang, Ya-Hsi; Kim, Byung-Jae; Ren, Fan; Pearton, Stephen J.; Lind, Aaron G.; Jones, Kevin S.; Kravchenko, I. I.; Zhang, Ming-Lan

    2015-04-21

    Here we studied the effect of buffer layer quality on dc characteristics of AlGaN/GaN high electron mobility (HEMTs). AlGaN/GaN HEMT structures with 2 and 5 μm GaN buffer layers on sapphire substrates from two different vendors with the same Al concentration of AlGaN were used. The defect densities of HEMT structures with 2 and 5 μm GaN buffer layer were 7 × 109 and 5 × 108 cm₋2, respectively, as measured by transmission electron microscopy. There was little difference in drain saturation current or in transfer characteristics in HEMTs on these two types of buffer. However, there was no dispersion observed on the nonpassivated HEMTs with 5 μm GaN buffer layer for gate-lag pulsed measurement at 100 kHz, which was in sharp contrast to the 71% drain current reduction for the HEMT with 2 μm GaN buffer layer.

  5. Integrating AlGaN/GaN high electron mobility transistor with Si: A comparative study of integration schemes

    SciTech Connect

    Mohan, Nagaboopathy; Raghavan, Srinivasan; Manikant,; Soman, Rohith

    2015-10-07

    AlGaN/GaN high electron mobility transistor stacks deposited on a single growth platform are used to compare the most common transition, AlN to GaN, schemes used for integrating GaN with Si. The efficiency of these transitions based on linearly graded, step graded, interlayer, and superlattice schemes on dislocation density reduction, stress management, surface roughness, and eventually mobility of the 2D-gas are evaluated. In a 500 nm GaN probe layer deposited, all of these transitions result in total transmission electron microscopy measured dislocations densities of 1 to 3 × 10{sup 9}/cm{sup 2} and <1 nm surface roughness. The 2-D electron gas channels formed at an AlGaN-1 nm AlN/GaN interface deposited on this GaN probe layer all have mobilities of 1600–1900 cm{sup 2}/V s at a carrier concentration of 0.7–0.9 × 10{sup 13}/cm{sup 2}. Compressive stress and changes in composition in GaN rich regions of the AlN-GaN transition are the most effective at reducing dislocation density. Amongst all the transitions studied the step graded transition is the one that helps to implement this feature of GaN integration in the simplest and most consistent manner.

  6. Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors

    SciTech Connect

    Yang, Jie Cui, Sharon; Ma, T. P.; Hung, Ting-Hsiang; Nath, Digbijoy; Krishnamoorthy, Sriram; Rajan, Siddharth

    2013-11-25

    We investigate the energy levels of electron traps in AlGaN/GaN high electron mobility transistors by the use of electron tunneling spectroscopy. Detailed analysis of a typical spectrum, obtained in a wide gate bias range and with both bias polarities, suggests the existence of electron traps both in the bulk of AlGaN and at the AlGaN/GaN interface. The energy levels of the electron traps have been determined to lie within a 0.5?eV band below the conduction band minimum of AlGaN, and there is strong evidence suggesting that these traps contribute to Frenkel-Poole conduction through the AlGaN barrier.

  7. Understanding cirrus ice crystal number variability for different...

    Office of Scientific and Technical Information (OSTI)

    Georgia Inst. of Technology, Atlanta, GA (United States) Univ. of Los Andes, Bogota (Colombia) NASA Goddard Space Flight Center (GSFC), Greenbelt, MD (United States) Georgia Inst. ...

  8. Analysis of defects in GaAsN grown by chemical beam epitaxy on high index GaAs substrates

    SciTech Connect

    Bouzazi, Boussairi; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi

    2013-09-27

    The lattice defects in GaAsN grown by chemical beam epitaxy on GaAs 311B and GaAs 10A toward [110] were characterized and discussed by using deep level transient spectroscopy (DLTS) and on the basis of temperature dependence of the junction capacitances (C{sub J}). In one hand, GaAsN films grown on GaAs 311B and GaAs 10A showed n-type and p-type conductivities, respectively although the similar and simultaneous growth conditions. This result is indeed in contrast to the common known effect of N concentration on the type of conductivity, since the surface 311B showed a significant improvement in the incorporation of N. Furthermore, the temperature dependence of C{sub J} has shown that GaAs 311B limits the formation of N-H defects. In the other hand, the energy states in the forbidden gap of GaAsN were obtained. Six electron traps, E1 to E6, were observed in the DLTS spectrum of GaAsN grown on GaAs 311B, with apparent activation energies of 0.02, 0.14, 0.16, 0.33, 0.48, and 0.74 eV below the bottom edge of the conduction band, respectively. In addition, four hole traps, H1 to H4, were observed in the DLTS spectrum of GaAsN grown on GaAs 10A, with energy depths of 0.13, 0.20, 0.39, and 0.52 eV above the valence band maximum of the alloy, respectively. Hence, the surface morphology of the GaAs substrate was found to play a key factor role in clarifying the electrical properties of GaAsN grown by CBE.

  9. Refractive index of erbium doped GaN thin films

    SciTech Connect

    Alajlouni, S.; Sun, Z. Y.; Li, J.; Lin, J. Y.; Jiang, H. X.; Zavada, J. M.

    2014-08-25

    GaN is an excellent host for erbium (Er) to provide optical emission in the technologically important as well as eye-safe 1540 nm wavelength window. Er doped GaN (GaN:Er) epilayers were synthesized on c-plane sapphire substrates using metal organic chemical vapor deposition. By employing a pulsed growth scheme, the crystalline quality of GaN:Er epilayers was significantly improved over those obtained by conventional growth method of continuous flow of reaction precursors. X-ray diffraction rocking curve linewidths of less than 300 arc sec were achieved for the GaN (0002) diffraction peak, which is comparable to the typical results of undoped high quality GaN epilayers and represents a major improvement over previously reported results for GaN:Er. Spectroscopic ellipsometry was used to determine the refractive index of the GaN:Er epilayers in the 1540 nm wavelength window and a linear dependence on Er concentration was found. The observed refractive index increase with Er incorporation and the improved crystalline quality of the GaN:Er epilayers indicate that low loss GaN:Er optical waveguiding structures are feasible.

  10. 0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell

    SciTech Connect

    Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

    2006-01-01

    We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga{sub 0.5}In{sub 0.5} P/GaAs/Ga{sub 0.75}In{sub 0.25}As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga{sub 0.75}In{sub 0.25}As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap Ga{sub x}In{sub 1-x}As fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the Ga{sub x}In{sub 1-x}As fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

  11. Structural Model of the Basement in the Central Savannah River Area, South Carolina and Georgia

    SciTech Connect

    Stephenson, D. [Westinghouse Savannah River Company, AIKEN, SC (United States); Stieve, A.

    1992-03-01

    Interpretation of several generations of seismic reflection data and potential field data suggests the presence of several crustal blocks within the basement beneath the Coastal Plain in the Central Savannah River Area (CSRA). The seismic reflection and refraction data include a grid of profiles that capture shallow and deep reflection events and traverse the Savannah River Site and vicinity. Potential field data includes aeromagnetic, ground magnetic surveys, reconnaissance and detailed gravity surveys. Subsurface data from recovered core are used to constrain the model.Interpretation of these data characteristically indicate a southeast dipping basement surface with some minor highs and lows suggesting an erosional pre-Cretaceous unconformity. This surface is interrupted by several basement faults, most of which offset only early Cretaceous sedimentary horizons overlying the erosional surface. The oldest fault is perhaps late Paleozoic because it is truncated at the basement/Coastal Plain interface. This fault is related in timing and mechanism to the underlying Augusta fault. The youngest faults deform Coastal Plain sediments of at least Priabonian age (40-36.6 Ma). One of these young faults is the Pen Branch faults, identified as the southeast dipping master fault for the Triassic Dunbarton basin. All the Cenozoic faults are probably related in time and mechanism to the nearby, well studied Belair fault.The study area thus contains a set of structures evolved from the Alleghanian orogeny through Mesozoic extension to Cenozoic readjustment of the crust. There is a metamorphosed crystalline terrane with several reflector/fault packages, a reactivated Triassic basin, a mafic terrane separating the Dunbarton basin from the large South Georgia basin to the southeast, and an overprint of reverse faults, some reactivated, and some newly formed.

  12. Ab initio study of Ga-GaN system: Transition from adsorbed metal atoms to a metal–semiconductor junction

    SciTech Connect

    Witczak, Przemysław; Kempisty, Pawel; Strak, Pawel

    2015-11-15

    Ab initio studies of a GaN(0001)-Ga system with various thicknesses of a metallic Ga layer were undertaken. The studied systems extend from a GaN(0001) surface with a fractional coverage of gallium atoms to a Ga-GaN metal–semiconductor (m–s) contact. Electronic properties of the system are simulated using density functional theory calculations for different doping of the bulk semiconductor. It is shown that during transition from a bare GaN(0001) surface to a m–s heterostructure, the Fermi level stays pinned at a Ga-broken bond highly dispersive surface state to Ga–Ga states at the m–s interface. Adsorption of gallium leads to an energy gain of about 4 eV for a clean GaN(0001) surface and the energy decreases to 3.2 eV for a thickly Ga-covered surface. The transition to the m–s interface is observed. For a thick Ga overlayer such interface corresponds to a Schottky contact with a barrier equal to 0.9 and 0.6 eV for n- and p-type, respectively. Bond polarization-related dipole layer occurring due to an electron transfer to the metal leads to a potential energy jump of 1.5 eV, independent on the semiconductor doping. Additionally high electron density in the Ga–Ga bond region leads to an energy barrier about 1.2 eV high and 4 Å wide. This feature may adversely affect the conductivity of the n-type m–s system.

  13. SEPA Freedom of Information Act (FOIA) program | Department of...

    Energy Saver

    The Southeastern Power Administration Public Reading Room is located in the Technical Library - Room 102, 1166 Athens Tech Road, Elberton, GA 30635 Additional Information Search ...

  14. Distributed bragg reflector using AIGaN/GaN

    DOEpatents

    Waldrip, Karen E.; Lee, Stephen R.; Han, Jung

    2004-08-10

    A supported distributed Bragg reflector or superlattice structure formed from a substrate, a nucleation layer deposited on the substrate, and an interlayer deposited on the nucleation layer, followed by deposition of (Al,Ga,B)N layers or multiple pairs of (Al,Ga,B)N/(Al,Ga,B)N layers, where the interlayer is a material selected from AlN, Al.sub.x Ga.sub.1-x N, and AlBN with a thickness of approximately 20 to 1000 angstroms. The interlayer functions to reduce or eliminate the initial tensile growth stress, thereby reducing cracking in the structure. Multiple interlayers utilized in an AlGaN/GaN DBR structure can eliminate cracking and produce a structure with a reflectivity value greater than 0.99.

  15. Efficiency enhancement of InGaN/GaN solar cells with nanostructures

    SciTech Connect

    Bai, J.; Yang, C. C.; Athanasiou, M.; Wang, T.

    2014-02-03

    We demonstrate InGaN/GaN multi-quantum-well solar cells with nanostructures operating at a wavelength of 520?nm. Nanostructures with a periodic nanorod or nanohole array are fabricated by means of modified nanosphere lithography. Under 1 sun air-mass 1.5 global spectrum illumination, a fill factor of 50 and an open circuit voltage of 1.9?V are achieved in spite of very high indium content in InGaN alloys usually causing degradation of crystal quality. Both the nanorod array and the nanohole array significantly improve the performance of solar cells, while a larger enhancement is observed for the nanohole array, where the conversion efficiency is enhanced by 51%.

  16. Raman spectroscopy of InGaAs/GaAs nanoheterostructures δ-doped with Mn

    SciTech Connect

    Plankina, S. M.; Vikhrova, O. V.; Danilov, Yu. A.; Zvonkov, B. N.; Kalentyeva, I. L.; Nezhdanov, A. V.; Chunin, I. I.; Yunin, P. A.

    2015-01-15

    The results of complex studies of InGaAs/GaAs nanoheterostructures δ-doped with Mn are reported. The structures are grown by metal-organic vapor-phase epitaxy in combination with laser deposition. By confocal Raman spectroscopy, it is shown that the low-temperature δ-doped GaAs cap layers are of higher crystal quality compared to uniformly doped layers. Scattering of light in the coupled phonon-plasmon mode is observed. The appearance of this mode is conditioned by the diffusion of manganese from the δ-layer. The thickness of the cap layer is found to be d{sub c} ≈ 9–20 nm, optimal for attainment of the highest photoluminescence intensity of the quantum well and the highest layer concentration of holes by doping with manganese.

  17. Electrical compensation by Ga vacancies in Ga{sub 2}O{sub 3} thin films

    SciTech Connect

    Korhonen, E.; Tuomisto, F.; Gogova, D.; Wagner, G.; Baldini, M.; Galazka, Z.; Schewski, R.; Albrecht, M.

    2015-06-15

    The authors have applied positron annihilation spectroscopy to study the vacancy defects in undoped and Si-doped Ga{sub 2}O{sub 3} thin films. The results show that Ga vacancies are formed efficiently during metal-organic vapor phase epitaxy growth of Ga{sub 2}O{sub 3} thin films. Their concentrations are high enough to fully account for the electrical compensation of Si doping. This is in clear contrast to another n-type transparent semiconducting oxide In{sub 2}O{sub 3}, where recent results show that n-type conductivity is not limited by cation vacancies but by other intrinsic defects such as O{sub i}.

  18. Graphene in ohmic contact for both n-GaN and p-GaN

    SciTech Connect

    Zhong, Haijian; Liu, Zhenghui; Shi, Lin; Xu, Gengzhao; Fan, Yingmin; Huang, Zengli; Wang, Jianfeng; Ren, Guoqiang; Xu, Ke

    2014-05-26

    The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. The local IV results show that some of the graphene wrinkles act as high-conductive channels and exhibiting ohmic behaviors compared with the flat regions with Schottky characteristics. We have studied the effects of the graphene wrinkles using density-functional-theory calculations. It is found that the standing and folded wrinkles with zigzag or armchair directions have a tendency to decrease or increase the local work function, respectively, pushing the local Fermi level towards n- or p-type GaN and thus improving the transport properties. These results can benefit recent topical researches and applications for graphene as electrode material integrated in various semiconductor devices.

  19. A InGaN/GaN quantum dot green ({lambda}=524 nm) laser

    SciTech Connect

    Zhang Meng; Banerjee, Animesh; Lee, Chi-Sen; Hinckley, John M.; Bhattacharya, Pallab

    2011-05-30

    The characteristics of self-organized InGaN/GaN quantum dot lasers are reported. The laser heterostructures were grown on c-plane GaN substrates by plasma-assisted molecular beam epitaxy and the laser facets were formed by focused ion beam etching with gallium. Emission above threshold is characterized by a peak at 524 nm (green) and linewidth of 0.7 nm. The lowest measured threshold current density is 1.2 kA/cm{sup 2} at 278 K. The slope and wall plug efficiencies are 0.74 W/A and {approx}1.1%, respectively, at 1.3 kA/cm{sup 2}. The value of T{sub 0}=233 K in the temperature range of 260-300 K.

  20. Photocapacitance study of type-II GaSb/GaAs quantum ring solar cells

    SciTech Connect

    Wagener, M. C.; Botha, J. R.; Carrington, P. J.; Krier, A.

    2014-01-07

    In this study, the density of states associated with the localization of holes in GaSb/GaAs quantum rings are determined by the energy selective charging of the quantum ring distribution. The authors show, using conventional photocapacitance measurements, that the excess charge accumulated within the type-II nanostructures increases with increasing excitation energies for photon energies above 0.9?eV. Optical excitation between the localized hole states and the conduction band is therefore not limited to the ?(k?=?0) point, with pseudo-monochromatic light charging all states lying within the photon energy selected. The energy distribution of the quantum ring states could consequently be accurately related from the excitation dependence of the integrated photocapacitance. The resulting band of localized hole states is shown to be well described by a narrow distribution centered 407?meV above the GaAs valence band maximum.

  1. Air Handler Condensate Recovery at the Environmental Protection...

    Energy Saver

    the U.S. Environmental Protection Agency (EPA) to address the need for water conservation ... The EPA SESD encompasses 12 acres in Athens, Georgia. A single laboratory building was ...

  2. Economic Benefits, Carbon Dioxide (CO2) Emissions Reduction, and Water Conservation Benefits from 1,000 Megawatts (MW) of New Wind Power in Georgia (Fact Sheet)

    SciTech Connect

    Not Available

    2008-06-01

    The U.S. Department of Energy's Wind Powering America Program is committed to educating state-level policy makers and other stakeholders about the economic, CO2 emissions, and water conservation impacts of wind power. This analysis highlights the expected impacts of 1000 MW of wind power in Georgia. We forecast the cumulative economic benefits from 1000 MW of development in Georgia to be $2.1 billion, annual CO2 reductions are estimated at 3.0 million tons, and annual water savings are 1,628 million gallons.

  3. Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots

    SciTech Connect

    Braun, T.; Schneider, C.; Maier, S.; Forchel, A.; Höfling, S.; Kamp, M.; Igusa, R.; Iwamoto, S.; Arakawa, Y.

    2014-09-15

    In this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence on single quantum dots with large pitches.

  4. The disintegration of GaSb/GaAs nanostructures upon capping

    SciTech Connect

    Martin, Andrew J.; Hwang, Jinyoung; Marquis, Emmanuelle A.; Smakman, Erwin; Saucer, Timothy W.; Rodriguez, Garrett V.; Hunter, Allen H.; Sih, Vanessa; Koenraad, Paul M.; Phillips, Jamie D.; Millunchick, Joanna

    2013-01-01

    Atom probe tomography and cross-sectional scanning tunneling microscopy show that GaSb/GaAs quantum dots disintegrate into ring-like clusters of islands upon capping. Band transition energies calculated using an 8-band k.p model of the capped dots with the observed dimensions are consistent with emission energies observed in photoluminescence data. These results emphasize the need for full three-dimensional characterization to develop an accurate understanding of the structure, and thus the optical properties, of buried quantum dots.

  5. Photoluminescence studies of individual and few GaSb/GaAs quantum rings

    SciTech Connect

    Young, M. P.; Woodhead, C. S.; Roberts, J.; Noori, Y. J.; Noble, M. T.; Krier, A.; Hayne, M.; Young, R. J.; Smakman, E. P.; Koenraad, P. M.

    2014-11-15

    We present optical studies of individual and few GaSb quantum rings embedded in a GaAs matrix. Contrary to expectation for type-II confinement, we measure rich spectra containing sharp lines. These lines originate from excitonic recombination and are observed to have resolution-limited full-width at half maximum of 200 ?eV. The detail provided by these measurements allows the characteristic type-II blueshift, observed with increasing excitation power, to be studied at the level of individual nanostructures. These findings are in agreement with hole-charging being the origin of the observed blueshift.

  6. Application of the ASME code in the design of the GA-4 and GA-9 casks

    SciTech Connect

    Mings, W.J. ); Koploy, M.A. )

    1992-01-01

    General Atomics (GA) is developing two spent fuel shipping casks for transport by legal weight truck (LWT). The casks are designed to the loading, environmental conditions and safety requirements defined in Title 10 of the Code of Federal Regulations, Part 71 (10CFR71). To ensure that all components of the cask meet the 10CFR71 rules, GA established structural design criteria for each component based on NRC Regulatory Guides and the American Society of Mechanical Engineers Boiler and Pressure Vessel Code (ASME Code). This paper discusses the criteria used for different cask components, how they were applied and the conservatism and safety margins built into the criteria and assumption.

  7. Application of the ASME code in the design of the GA-4 and GA-9 casks

    SciTech Connect

    Mings, W.J.; Koploy, M.A.

    1992-08-01

    General Atomics (GA) is developing two spent fuel shipping casks for transport by legal weight truck (LWT). The casks are designed to the loading, environmental conditions and safety requirements defined in Title 10 of the Code of Federal Regulations, Part 71 (10CFR71). To ensure that all components of the cask meet the 10CFR71 rules, GA established structural design criteria for each component based on NRC Regulatory Guides and the American Society of Mechanical Engineers Boiler and Pressure Vessel Code (ASME Code). This paper discusses the criteria used for different cask components, how they were applied and the conservatism and safety margins built into the criteria and assumption.

  8. Origins of ion irradiation-induced Ga nanoparticle motion on GaAs surfaces

    SciTech Connect

    Kang, M.; Wu, J. H.; Chen, H. Y.; Thornton, K.; Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Sofferman, D. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Adelphi University, Garden City, New York 11530-0701 (United States); Beskin, I. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)

    2013-08-12

    We have examined the origins of ion irradiation-induced nanoparticle (NP) motion. Focused-ion-beam irradiation of GaAs surfaces induces random walks of Ga NPs, which are biased in the direction opposite to that of ion beam scanning. Although the instantaneous NP velocities are constant, the NP drift velocities are dependent on the off-normal irradiation angle, likely due to a difference in surface non-stoichiometry induced by the irradiation angle dependence of the sputtering yield. It is hypothesized that the random walks are initiated by ion irradiation-induced thermal fluctuations, with biasing driven by anisotropic mass transport.

  9. Inverse spin Hall effect in Pt/(Ga,Mn)As

    SciTech Connect

    Nakayama, H.; Chen, L.; Chang, H. W.; Ohno, H.; Matsukura, F.

    2015-06-01

    We investigate dc voltages under ferromagnetic resonance in a Pt/(Ga,Mn)As bilayer structure. A part of the observed dc voltage is shown to originate from the inverse spin Hall effect. The sign of the inverse spin Hall voltage is the same as that in Py/Pt bilayer structure, even though the stacking order of ferromagnetic and nonmagnetic layers is opposite to each other. The spin mixing conductance at the Pt/(Ga,Mn)As interface is determined to be of the order of 10{sup 19 }m{sup −2}, which is about ten times greater than that of (Ga,Mn)As/p-GaAs.

  10. Bismuth alloying properties in GaAs nanowires

    SciTech Connect

    Ding, Lu; Lu, Pengfei; Cao, Huawei; Cai, Ningning; Yu, Zhongyuan; Gao, Tao; Wang, Shumin

    2013-09-15

    First-principles calculations have been performed to investigate the structural, electronic and optical properties of bismuth alloying in GaAs nanowires. A typical model of Ga{sub 31}As{sub 31} nanowires is introduced for its reasonable band gap. The band gap of GaAs{sub 1−x}Bi{sub x} shrinks clearly with the increasing Bi concentration and the band edge shifts when spin–orbit coupling (SOC) is considered. The insertion of Bi atom leads to hybridization of Ga/As/Bi p states which contributes a lot around Fermi level. Scissor effect is involved. The optical properties are presented, including dielectric function, optical absorption spectra and reflectivity, which are also varied with the increasing of Bi concentrations. - Graphical abstract: Top view of Bi-doped GaAs nanowires. Ga, As, and Bi atoms are denoted with grey, purple and red balls, respectively. Display Omitted - Highlights: • A typical model of Ga{sub 31}As{sub 31} nanowires is introduced for its reasonable band gap. • The band gap of GaAs{sub 1−x}Bi{sub x} shrinks clearly with the increasing Bi concentration. • The band edge shifts when spin–orbit coupling (SOC) is considered. • The insertion of Bi atom leads to hybridization of Ga/As/Bi p states.

  11. Photoluminescence from GaAs nanodisks fabricated by using combination...

    Office of Scientific and Technical Information (OSTI)

    GaAs nanodisks fabricated by using combination of neutral beam etching and atomic hydrogen-assisted molecular beam epitaxy regrowth Citation Details In-Document Search Title:...

  12. Au impact on GaAs epitaxial growth on GaAs (111){sub B} substrates in molecular beam epitaxy

    SciTech Connect

    Liao, Zhi-Ming; Chen, Zhi-Gang; Xu, Hong-Yi; Guo, Ya-Nan; Sun, Wen; Zhang, Zhi; Yang, Lei; Lu, Zhen-Yu; Chen, Ping-Ping; Lu, Wei; Zou, Jin; Centre for Microscopy and Microanalysis, The University of Queensland, St. Lucia, Queensland 4072

    2013-02-11

    GaAs growth behaviour under the presence of Au nanoparticles on GaAs {l_brace}111{r_brace}{sub B} substrate is investigated using electron microscopy. It has been found that, during annealing, enhanced Ga surface diffusion towards Au nanoparticles leads to the GaAs epitaxial growth into {l_brace}113{r_brace}{sub B} faceted triangular pyramids under Au nanoparticles, governed by the thermodynamic growth, while during conventional GaAs growth, growth kinetics dominates, resulting in the flatted triangular pyramids at high temperature and the epitaxial nanowires growth at relatively low temperature. This study provides an insight of Au nanoparticle impact on GaAs growth, which is critical for understanding the formation mechanisms of semiconductor nanowires.

  13. Deep level defects in n-type GaAsBi and GaAs grown at low temperatures

    SciTech Connect

    Mooney, P. M.; Watkins, K. P.; Jiang, Zenan; Basile, A. F.; Lewis, R. B.; Bahrami-Yekta, V.; Masnadi-Shirazi, M.; Beaton, D. A.; Tiedje, T.

    2013-04-07

    Deep level defects in n-type GaAs{sub 1-x}Bi{sub x} having 0 < x < 0.012 and GaAs grown by molecular beam epitaxy (MBE) at substrate temperatures between 300 and 400 Degree-Sign C have been investigated by Deep Level Capacitance Spectroscopy. Incorporating Bi suppresses the formation of an electron trap with activation energy 0.40 eV, thus reducing the total trap concentration in dilute GaAsBi layers by more than a factor of 20 compared to GaAs grown under the same conditions. We find that the dominant traps in dilute GaAsBi layers are defect complexes involving As{sub Ga}, as expected for MBE growth at these temperatures.

  14. Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains

    SciTech Connect

    Kondratenko, S. V. Vakulenko, O. V.; Mazur, Yu. I. Dorogan, V. G.; Marega, E.; Benamara, M.; Ware, M. E.; Salamo, G. J.

    2014-11-21

    The in-plane photoconductivity and photoluminescence are investigated in quantum dot-chain InGaAs/GaAs heterostructures. Different photoconductivity transients resulting from spectrally selecting photoexcitation of InGaAs QDs, GaAs spacers, or EL2 centers were observed. Persistent photoconductivity was observed at 80?K after excitation of electron-hole pairs due to interband transitions in both the InGaAs QDs and the GaAs matrix. Giant optically induced quenching of in-plane conductivity driven by recharging of EL2 centers is observed in the spectral range from 0.83?eV to 1.0?eV. Conductivity loss under photoexcitation is discussed in terms of carrier localization by analogy with carrier distribution in disordered media.

  15. Reactive codoping of GaAlInP compound semiconductors (Patent...

    Office of Scientific and Technical Information (OSTI)

    Patent: Reactive codoping of GaAlInP compound semiconductors Citation Details In-Document Search Title: Reactive codoping of GaAlInP compound semiconductors A GaAlInP compound ...

  16. Growth and Band Offsets of Epitaxial Lanthanide Oxides on GaN...

    Office of Scientific and Technical Information (OSTI)

    M.T.T., 60 (6) (2012) 3 Jon Ihlefeld, Sandia National Laboratories Electronic Materials ... Undoped GaN Undoped AlGaN Doped AlGaN 2D Electron Gas Enhancement Mode (nominally ...

  17. Long-wavelength shift and enhanced room temperature photoluminescence efficiency in GaAsSb/InGaAs/GaAs-based heterostructures emitting in the spectral range of 1.01.2??m due to increased charge carrier's localization

    SciTech Connect

    Kryzhkov, D. I. Yablonsky, A. N.; Morozov, S. V.; Aleshkin, V. Ya.; Krasilnik, Z. F.; Zvonkov, B. N.; Vikhrova, O. V.

    2014-11-28

    In this work, a study of the photoluminescence (PL) temperature dependence in quantum well GaAs/GaAsSb and double quantum well InGaAs/GaAsSb/GaAs heterostructures grown by metalorganic chemical vapor deposition with different parameters of GaAsSb and InGaAs layers has been performed. It has been demonstrated that in double quantum well InGaAs/GaAsSb/GaAs heterostructures, a significant shift of the PL peak to a longer-wavelength region (up to 1.2??m) and a considerable reduction in the PL thermal quenching in comparison with GaAs/GaAsSb structures can be obtained due to better localization of charge carriers in the double quantum well. For InGaAs/GaAsSb/GaAs heterostructures, an additional channel of radiative recombination with participation of the excited energy states in the quantum well, competing with the main ground-state radiative transition, has been revealed.

  18. SREL Reprint #3321

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    1 Effects of vegetation structure and artificial nesting habitats on hatchling sex determination and nest survival of Diamondback Terrapins Andrew M. Grosse1, Brian A. Crawford2, John C. Maerz2, Kurt A. Buhlmann1, Terry Norton3, Michelle Kaylor3, and Tracey D. Tuberville1 1Savannah River Ecology Laboratory, University of Georgia, Drawer E, Aiken, South Carolina 29802 2D. B. Warnell School of Forestry and Natural Resources, University of Georgia, Athens, Georgia 30602 3Georgia Sea Turtle Center,

  19. An inverted AlGaAs/GaAs patterned-Ge tunnel junction cascade concentrator solar cell

    SciTech Connect

    Venkatasubramanian, R. )

    1993-01-01

    This report describes work to develop inverted-grown Al[sub 0.34]Ga[sub 0.66]As/GaAs cascades. Several significant developments are reported on as follows: (1) The AM1.5 1-sun total-area efficiency of the top Al[sub 0.34]Ga[sub 0.66]As cell for the cascade was improved from 11.3% to 13.2% (NREL measurement [total-area]). (2) The cycled'' organometallic vapor phase epitaxy growth (OMVPE) was studied in detail utilizing a combination of characterization techniques including Hall-data, photoluminescence, and secondary ion mass spectroscopy. (3) A technique called eutectic-metal-bonding (EMB) was developed by strain-free mounting of thin GaAs-AlGaAs films (based on lattice-matched growth on Ge substrates and selective plasma etching of Ge substrates) onto Si carrier substrates. Minority-carrier lifetime in an EMB GaAs double-heterostructure was measured as high as 103 nsec, the highest lifetime report for a freestanding GaAs thin film. (4) A thin-film, inverted-grown GaAs cell with a 1-sun AM1.5 active-area efficiency of 20.3% was obtained. This cell was eutectic-metal-bonded onto Si. (5) A thin-film inverted-grown, Al[sub 0.34]Ga[sub 0.66]As/GaAs cascade with AM1.5 efficiency of 19.9% and 21% at 1-sun and 7-suns, respectively, was obtained. This represents an important milestone in the development of an AlGaAs/GaAs cascade by OMVPE utilizing a tunnel interconnect and demonstrates a proof-of-concept for the inverted-growth approach.

  20. DC characteristics of OMVPE-grown N-p-n InGaP/InGaAsN DHBTs

    SciTech Connect

    Li, N.Y.; Chang, P.C.; Baca, A.G.; Xie, X.M.; Sharps, P.R.; Hou, H.Q.

    2000-01-04

    The authors demonstrate, for the first time, a functional N-p-n heterojunction bipolar transistor using a novel material, InGaAsN, with a bandgap energy of 1.2eV as the p-type base layer. A 300{angstrom}-thick In{sub x}Ga{sub 1-x}As graded layer was introduced to reduce the conduction band offset at the p-type InGaAsN base and n-type GaAs collector junction. For an emitter size of 500 {mu}m{sup 2}, a peak current gain of 5.3 has been achieved.

  1. Interfacial bonding and electronic structure of GaN/GaAs interface: A first-principles study

    SciTech Connect

    Cao, Ruyue; Zhang, Zhaofu; Wang, Changhong; Li, Haobo; Dong, Hong; Liu, Hui; Wang, Weichao; Xie, Xinjian

    2015-04-07

    Understanding of GaN interfacing with GaAs is crucial for GaN to be an effective interfacial layer between high-k oxides and III-V materials with the application in high-mobility metal-oxide-semiconductor field effect transistor (MOSFET) devices. Utilizing first principles calculations, here, we investigate the structural and electronic properties of the GaN/GaAs interface with respect to the interfacial nitrogen contents. The decrease of interfacial N contents leads to more Ga dangling bonds and As-As dimers. At the N-rich limit, the interface with N concentration of 87.5% shows the most stability. Furthermore, a strong band offsets dependence on the interfacial N concentration is also observed. The valance band offset of N7 with hybrid functional calculation is 0.51 eV. The electronic structure analysis shows that significant interface states exist in all the GaN/GaAs models with various N contents, which originate from the interfacial dangling bonds and some unsaturated Ga and N atoms. These large amounts of gap states result in Fermi level pinning and essentially degrade the device performance.

  2. Transportation of foreign-owned enriched uranium from the Republic of Georgia. Environmental assessment for Project Partnership

    SciTech Connect

    1998-03-31

    The Department of Energy (DOE) Office of Nonproliferation and National Security (NN) has prepared a classified environmental assessment to evaluate the potential environmental impact for the transportation of 5.26 kilograms of enriched uranium-235 in the form of nuclear fuel, from the Republic of Georgia to the United Kingdom. The nuclear fuel consists of primarily fresh fuel, but also consists of a small quantity (less than 1 kilogram) of partially-spent fuel. Transportation of the enriched uranium fuel would occur via US Air Force military aircraft under the control of the Defense Department European Command (EUCOM). Actions taken in a sovereign nation (such as the Republic of Georgia and the United Kingdom) are not subject to analysis in the environmental assessment. However, because the action would involve the global commons of the Black Sea and the North Sea, the potential impact to the global commons has been analyzed. Because of the similarities in the two actions, the Project Sapphire Environmental Assessment was used as a basis for assessing the potential impacts of Project Partnership. However, because Project Partnership involves a small quantity of partially-spent fuel, additional analysis was conducted to assess the potential environmental impacts and to consider reasonable alternatives as required by NEPA. The Project Partnership Environmental Assessment found the potential environmental impacts to be well below those from Project Sapphire.

  3. Self-catalyzed growth of dilute nitride GaAs/GaAsSbN/GaAs core-shell nanowires by molecular beam epitaxy

    SciTech Connect

    Kasanaboina, Pavan Kumar; Ahmad, Estiak; Li, Jia; Iyer, Shanthi; Reynolds, C. Lewis; Liu, Yang

    2015-09-07

    Bandgap tuning up to 1.3 μm in GaAsSb based nanowires by incorporation of dilute amount of N is reported. Highly vertical GaAs/GaAsSbN/GaAs core-shell configured nanowires were grown for different N contents on Si (111) substrates using plasma assisted molecular beam epitaxy. X-ray diffraction analysis revealed close lattice matching of GaAsSbN with GaAs. Micro-photoluminescence (μ-PL) revealed red shift as well as broadening of the spectra attesting to N incorporation in the nanowires. Replication of the 4K PL spectra for several different single nanowires compared to the corresponding nanowire array suggests good compositional homogeneity amongst the nanowires. A large red shift of the Raman spectrum and associated symmetric line shape in these nanowires have been attributed to phonon localization at point defects. Transmission electron microscopy reveals the dominance of stacking faults and twins in these nanowires. The lower strain present in these dilute nitride nanowires, as opposed to GaAsSb nanowires having the same PL emission wavelength, and the observation of room temperature PL demonstrate the advantage of the dilute nitride system offers in the nanowire configuration, providing a pathway for realizing nanoscale optoelectronic devices in the telecommunication wavelength region.

  4. Localized corrosion of GaAs surfaces and formation of porous GaAs

    SciTech Connect

    Schmuki, P.; Vitus, C.M.; Isaacs, H.S.; Fraser, J.; Graham, M.J.

    1995-12-01

    The present work deals with pitting corrosion of p- and n-type GaAs (100). Pit growth can be electrochemically initiated on both conduction types in chloride-containing solutions and leads after extended periods of time to the formation of a porous GaAs structure. In the case of p-type material, localized corrosion is only observed if a passivating film is present on the surface, otherwise -- e.g. in acidic solutions -- the material suffers from a uniform attack (electropolishing) which is independent of the anion present. In contrast, pitting corrosion of n-type material can be triggered independent of the presence of an oxide film. This is explained in terms of the different current limiting factor for the differently doped materials (oxide film in the case of the p- and a space charge layer in the case of the n-GaAs). The porous structure was characterized by SEM, EDX and AES, and consists mainly of GaAs. From scratch experiments it is clear that the pit initiation process is strongly influenced by surface defects. For n-type material, AFM investigations show that light induced roughening of the order of several hundred nm occurs under non-passivating conditions. This nm- scale roughening however does not affect the pitting process.

  5. AlGaAs/InGaAlP tunnel junctions for multijunction solar cells

    SciTech Connect

    SHARPS,P.R.; LI,N.Y.; HILLS,J.S.; HOU,H.; CHANG,PING-CHIH; BACA,ALBERT G.

    2000-05-16

    Optimization of GaInP{sub 2}/GaAs dual and GaInP{sub 2}/GaAs/Ge triple junction cells, and development of future generation monolithic multi-junction cells will involve the development of suitable high bandgap tunnel junctions. There are three criteria that a tunnel junction must meet. First, the resistance of the junction must be kept low enough so that the series resistance of the overall device is not increased. For AMO, 1 sun operation, the tunnel junction resistance should be below 5 x 10{sup {minus}2} {Omega}-cm. Secondly, the peak current density for the tunnel junction must also be larger than the J{sub sc} of the cell so that the tunnel junction I-V curve does not have a deleterious effect on the I-V curve of the multi-junction device. Finally, the tunnel junction must be optically transparent, i.e., there must be a minimum of optical absorption of photons that will be collected by the underlying subcells. The paper reports the investigation of four high bandgap tunnel junctions grown by metal-organic chemical vapor deposition.

  6. High-Efficiency GaInP/GaAs Tandem Solar Cells

    SciTech Connect

    Bertness, K. A.; Friedman, D. J.; Kurtz, S. R.; Kibbler, A. E.; Cramer, C.; Olson, J. M.

    1996-09-01

    GaInP/GaAs tandem solar cells have achieved efficiencies between 25.7-30.2%, depending on illumination conditions. The efficiencies are the highest confirmed two-terminal values measured for any solar cell within each standard illumination category. The monolithic, series-connected design of the tandem cells allows them to be substituted for silicon or gallium arsenide cells in photovoltaic panel systems with minimal design changes. The advantages of using GaInP/GaAs tandem solar cells in space and terrestrial applications are discussed primarily in terms of the reduction in balance-of-system costs that accrues when using a higher efficiency cell. The new efficiency values represent a significant improvement over previous efficiencies for this materials system, and we identify grid design, back interface passivation, and top interface passivation as the three key factors leading to this improvement. In producing the high-efficiency cells, we have addressed nondestructive diagnostics and materials growth reproducibility as well as peak cell performance.

  7. High-efficiency GaInP/GaAs tandem solar cells

    SciTech Connect

    Bertness, K.A.; Friedman, D.J.; Kurtz, S.R.; Kibbler, A.E.; Kramer, C.; Olson, J.M.

    1994-12-01

    GaInP/GaAs tandem solar cells have achieved new record efficiencies, specifically 25.7% under air-mass 0 (AM0) illumination, 29.5% under AM 1.5 global (AM1.5G) illumination, and 30.2% at 140-180x concentration under AM 1.5 direct (AM1.5D) illumination. These values are the highest two-terminal efficiencies achieved by any solar cell under these illumination conditions. The monolithic, series-connected design of the tandem cells allows them to be substituted for silicon or gallium arsenide cells in photovoltaic panel systems with minimal design changes. The advantages of using GaInP/GaAs tandem solar cells in space and terrestrial applications are discussed primarily in terms of the reduction in balance-of-system costs that accrues when using a higher efficiency cell. The new efficiency values represent a significant improvement over previous efficiencies for this materials system, and we identify grid design, back interface passivation, and top interface passivation as the three key factors leading to this improvement. In producing the high-efficiency cells, we have addressed nondestructive diagnostics and materials growth reproducibility as well as peak cell performance. 31 refs.

  8. TJ Solar Cell (GaInP/GaAs/Ge Ultrahigh-Efficiency Solar Cells

    SciTech Connect

    Friedman, Daniel

    2002-04-17

    This talk will discuss recent developments in III-V multijunction photovoltaic technology which have led to the highest-efficiency solar cells ever demonstrated. The relationship between the materials science of III-V semiconductors and the achievement of record solar cell efficiencies will be emphasized. For instance, epitaxially-grown GAInP has been found to form a spontaneously-ordered GaP/InP (111) superlattice. This ordering affects the band gap of the material, which in turn affects the design of solar cells which incorporate GaInP. For the next generation of ultrahigh-efficiency III-V solar cells, we need a new semiconductor which is lattice-matched to GaAs, has a band gap of 1 eV, and has long minority-carrier diffusion lengths. Out of a number of candidate materials, the recently-discovered alloy GaInNAs appears to have the greatest promise. This material satisfies the first two criteria, but has to date shown very low diffusion lengths, a problem which is our current focus in the development of these next-generation cells.

  9. Multijunction GaInP/GaInAs/Ge solar cells with Bragg reflectors

    SciTech Connect

    Emelyanov, V. M. Kalyuzhniy, N. A.; Mintairov, S. A.; Shvarts, M. Z.; Lantratov, V. M.

    2010-12-15

    Effect of subcell parameters on the efficiency of GaInP/Ga(In)As/Ge tandem solar cells irradiated with 1-MeV electrons at fluences of up to 3 x 10{sup 15} cm{sup -2} has been theoretically studied. The optimal thicknesses of GaInP and GaInAs subcells, which provide the best photocurrent matching at various irradiation doses in solar cells with and without built-in Bragg reflectors, were determined. The dependences of the photoconverter efficiency on the fluence of 1-MeV electrons and on the time of residence in the geostationary orbit were calculated for structures optimized to the beginning and end of their service lives. It is shown that the optimization of the subcell heterostructures for a rated irradiation dose and the introduction of Bragg reflectors into the structure provide a 5% overall increase in efficiency for solar cells operating in the orbit compared with unoptimized cells having no Bragg reflector.

  10. GaP/Si heterojunction Solar Cells

    SciTech Connect

    Saive, R.; Chen, C.; Emmer, H.; Atwater, H.

    2015-05-11

    Improving the efficiency of solar cells requires the introduction of novel device concepts. Recent developments have shown that in Si solar cell technology there is still room for tremendous improvement. Using the heterojunction with intrinsic thin layer (HIT) approach 25.6 % power conversion efficiency was achieved. However, a-Si as a window and passivation layer comes with disadvantages as a-Si shows low conductivity and high parasitic absorption. Therefore, it is likely that using a crystalline material as window layer with high band gab and high mobility can further improve efficiency. We have studied GaP grown by MOCVD on Si with (001) and (112) orientation. We obtained crystalline layers with carrier mobility around 100 cm2/Vs and which passivate Si as confirmed by carrier lifetime measurements. We performed band alignment studies by X-ray photoelectron spectroscopy yielding a valence band offset of 0.3 eV. Comparing this value with the Schottky-model leads to an interface dipole of 0.59 eV. The open circuit voltage increases with increasing doping and is consistent with the theoretical open circuit voltage deduced from work function difference and interface dipole. We obtain an open circuit voltage of 0.38 V for n-doped GaP with doping levels in the order of 10^17 1/cm^3. In our next steps we will increase the doping level further in order to gain higher open circuit voltage. We will discuss the implications of these findings for GaP/Si heterojunction solar cells.

  11. A monolithic white LED with an active region based on InGaN QWs separated by short-period InGaN/GaN superlattices

    SciTech Connect

    Tsatsulnikov, A. F. Lundin, W. V.; Sakharov, A. V.; Zavarin, E. E.; Usov, S. O.; Nikolaev, A. E.; Kryzhanovskaya, N. V.; Synitsin, M. A.; Sizov, V. S.; Zakgeim, A. L.; Mizerov, M. N.

    2010-06-15

    A new approach to development of effective monolithic white-light emitters is described based on using a short-period InGaN/GaN superlattice as a barrier layer in the active region of LED structures between InGaN quantum wells emitting in the blue and yellow-green spectral ranges. The optical properties of structures of this kind have been studied, and it is demonstrated that the use of such a superlattice makes it possible to obtain effective emission from the active region.

  12. Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

    SciTech Connect

    Killat, N. E-mail: Martin.Kuball@bristol.ac.uk; Montes Bajo, M.; Kuball, M. E-mail: Martin.Kuball@bristol.ac.uk; Paskova, T.; Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695 ; Evans, K. R.; Leach, J.; Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 ; Li, X.; Özgür, Ü.; Morkoç, H.; Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D.

    2013-11-04

    To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.

  13. Atomic structure of defects in GaN:Mg grown with Ga polarity

    SciTech Connect

    Liliental-Weber, Z.; Tomaszewicz, T.; Zakharov, D.; Jasinski, J.; O'Keefe, M.A.; Hautakangas, S.; Laakso, A.; Saarinen, K.

    2003-11-25

    Electron microscope phase images, produced by direct reconstruction of the scattered electron wave from a focal series of high-resolution images, were used to determine the nature of defects formed in GaN:Mg crystals. We studied bulk crystals grown from dilute solutions of atomic nitrogen in liquid gallium at high pressure and thin films grown by the MOCVD method. All the crystals were grown with Ga-polarity. In both types of samples the majority of defects were three dimensional Mg-rich hexagonal pyramids with bases on the (0001) plane and six walls on {l_brace}11{und 2}3{r_brace} planes seen in cross-section as triangulars. Some other defects appear in cross-section as trapezoidal (rectangular) defects as a result of presence of truncated pyramids. Both type of defects have hollow centers. They are decorated by Mg on all six side walls and a base. The GaN which grows inside on the defect walls shows polarity inversion. It is shown that change of polarity starts from the defect tip and propagates to the base, and that the stacking sequence changes from ab in the matrix to bc inside the defect. Exchange of the Ga sublattice with the N sublattice within the defect leads to 0.6 {+-} 0.2{angstrom} displacement between Ga sublattices outside and inside the defects. It is proposed that lateral overgrowth of the cavities formed within the defect takes place to restore matrix polarity on the defect base.

  14. Public health assessment for Southwire Company and Southwire Company Copper Division, Carrollton, Carroll County, Georgia, Region 4: CERCLIS Number GAD003264421 and CERCLIS Number GAD000814541. Final report

    SciTech Connect

    1998-09-22

    The Southwire Company`s manufacturing divisions are located in Carroll County, Georgia, within the southeastern city limits of Carrollton. ATSDR identified contaminants, predominantly metals, in on-site soil, groundwater, surface water, sediment, fish and slag/waste material. On-site groundwater samples collected in 1984 indicated the presence of trichloroethylene (TCE).

  15. Photoeffects in WO{sub 3}/GaAs electrode

    SciTech Connect

    Yoon, K.H.; Lee, J.W.; Cho, Y.S.; Kang, D.H.

    1996-12-01

    Photoeffects of a {ital p}-type GaAs coated with WO{sub 3} thin film have been investigated as a function of film thickness and photoresponse transients of the WO{sub 3}/GaAs electrode were studied. Also, these results were compared to those for a single {ital p}-type GaAs electrode. The photocurrent of the WO{sub 3}/GaAs electrode depended on the film thickness of the WO{sub 3}, showing an optimum photon efficiency for specimens of 800 A thickness. This is due to the existence of an effective interface state within the band gap which reduces trapping of carriers and facilitates carrier movement. For an 800-A-thick WO{sub 3} thin film deposited {ital p}-GaAs photoelectrode, the photogenerated electrons were found to move to an electrolyte at a higher positive onset potential compared with that of single {ital p}-type GaAs, which was confirmed as a result of transient behavior. {ital I}{endash}{ital V} and {ital C}{endash}{ital V} characteristics of the WO{sub 3}/GaAs electrode were also compared with those of a single {ital p}-type GaAs electrode. {copyright} {ital 1996 American Institute of Physics.}

  16. Effect of InGaAs interlayer on the properties of GaAs grown on Si (111) substrate by molecular beam epitaxy

    SciTech Connect

    Wen, Lei; Gao, Fangliang; Li, Jingling; Guan, Yunfang; Wang, Wenliang; Zhou, Shizhong; Lin, Zhiting; Zhang, Xiaona; Zhang, Shuguang E-mail: mssgzhang@scut.edu.cn; Li, Guoqiang E-mail: mssgzhang@scut.edu.cn

    2014-11-21

    High-quality GaAs films have been epitaxially grown on Si (111) substrates by inserting an In{sub x}Ga{sub 1−x}As interlayer with proper In composition by molecular beam epitaxy (MBE). The effect of In{sub x}Ga{sub 1−x}As (0 < x < 0.2) interlayers on the properties of GaAs films grown on Si (111) substrates by MBE has been studied in detailed. Due to the high compressive strain between InGaAs and Si, InGaAs undergoes partial strain relaxation. Unstrained InGaAs has a larger lattice constant than GaAs. Therefore, a thin InGaAs layer with proper In composition may adopt a close lattice constant with that of GaAs, which is beneficial to the growth of high-quality GaAs epilayer on top. It is found that the proper In composition in In{sub x}Ga{sub 1−x}As interlayer of 10% is beneficial to obtaining high-quality GaAs films, which, on the one hand, greatly compensates the misfit stress between GaAs film and Si substrate, and on the other hand, suppresses the formation of multiple twin during the heteroepitaxial growth of GaAs film. However, when the In composition does not reach the proper value (∼10%), the In{sub x}Ga{sub 1−x}As adopts a lower strain relaxation and undergoes a lattice constant smaller than unstrained GaAs, and therefore introduces compressive stress to GaAs grown on top. When In composition exceeds the proper value, the In{sub x}Ga{sub 1−x}As will adopt a higher strain relaxation and undergoes a lattice constant larger than unstrained GaAs, and therefore introduces tensile stress to GaAs grown on top. As a result, In{sub x}Ga{sub 1−x}As interlayers with improper In composition introduces enlarged misfit stress to GaAs epilayers grown on top, and deteriorates the quality of GaAs epilayers. This work demonstrates a simple but effective method to grow high-quality GaAs epilayers and brings up a broad prospect for the application of GaAs-based optoelectronic devices on Si substrates.

  17. Altered biodistribution of Ga-67 by intramuscular gold salts

    SciTech Connect

    Moult, R.G.; Bekerman, C. )

    1989-11-01

    The authors observed a deviation from the normal scintigraphic pattern of Ga-67 citrate biodistribution. An 8-year-old black girl with juvenile rheumatoid arthritis, who had been treated with intramuscular injections of gold salts, had a Ga-67 study as part of her workup. The study demonstrated no hepatic uptake, but showed elevated skeletal and renal activity. This characteristic biodistribution of Ga-67 may be due to inhibition of lysosomal enzymes by gold and/or to accumulation of gold in lysosomes. To study these possibilities, the authors reviewed the mechanisms of Ga-67 localization and gold metabolism. Alteration of the Ga-67 citrate scintigraphic pattern due to earlier treatment with gold salts has not been reported previously.

  18. Elastic properties of Pu metal and Pu-Ga alloys

    SciTech Connect

    Soderlind, P; Landa, A; Klepeis, J E; Suzuki, Y; Migliori, A

    2010-01-05

    We present elastic properties, theoretical and experimental, of Pu metal and Pu-Ga ({delta}) alloys together with ab initio equilibrium equation-of-state for these systems. For the theoretical treatment we employ density-functional theory in conjunction with spin-orbit coupling and orbital polarization for the metal and coherent-potential approximation for the alloys. Pu and Pu-Ga alloys are also investigated experimentally using resonant ultrasound spectroscopy. We show that orbital correlations become more important proceeding from {alpha} {yields} {beta} {yields} {gamma} plutonium, thus suggesting increasing f-electron correlation (localization). For the {delta}-Pu-Ga alloys we find a softening with larger Ga content, i.e., atomic volume, bulk modulus, and elastic constants, suggest a weakened chemical bonding with addition of Ga. Our measurements confirm qualitatively the theory but uncertainties remain when comparing the model with experiments.

  19. Preparation and thermoelectric properties of Ga-substituted p-type fully filled skutterudites CeFe{sub 4-x}Ga{sub x}Sb{sub 12}

    SciTech Connect

    Tan, Gangjian; Wang, Shanyu; Tang, Xinfeng; Li, Han; Uher, Ctirad

    2012-12-15

    We demonstrate a successful substitution of Ga at the Fe sites with a solubility limit of -0.11 in the p-type filled skutterudite compounds CeFe{sub 4-x}Ga{sub x}Sb{sub 12}. With increasing Ga content, the electrical conductivity declines while the Seebeck coefficient improves gradually, consistent with the expected decrease in hole concentration due to the extra electrons introduced by Ga. Moreover, the resemblances in electrical transport properties between Ga- and Co-substituted systems with similar composition indicate that Ga doping exerts little influence on the electronic structure near the top of the valence band. The phonon transport is scarcely affected by the introduction of Ga because of negligible differences in atomic masses and sizes of Ga and Fe. The thermoelectric performance of Ga-substituted samples is slightly improved in the temperature range of 600 K to 800 K with respect to that of Ga-free sample, revealing a favorable effect of Ga-substitution on the intermediate temperature power generation application of this promising p-type material. - Graphical abstract: (a-c) Ga successfully substitutes Fe atoms up to x=0.11 in the CeFe{sub 4-x}Ga{sub x}Sb{sub 12}. (d) The introduction of Ga barely affects the electronic structure near E{sub F}. Highlights: Black-Right-Pointing-Pointer Ga as an effective substitute for Fe in p-type skutterudites CeFe{sub 4-x}Ga{sub x}Sb{sub 12}. Black-Right-Pointing-Pointer The solubility limit of Ga at Fe sites is -0.11 in CeFe{sub 4-x}Ga{sub x}Sb{sub 12}. Black-Right-Pointing-Pointer Ga barely affects the electronic structure near the Fermi level.

  20. Growth of GaN@InGaN Core-Shell and Au-GaN Hybrid Nanostructures for Energy Applications

    DOE PAGES [OSTI]

    Kuykendall, Tevye; Aloni, Shaul; Jen-La Plante, Ilan; Mokari, Taleb

    2009-01-01

    We demonstrated a method to control the bandgap energy of GaN nanowires by forming GaN@InGaN core-shell hybrid structures using metal organic chemical vapor deposition (MOCVD). Furthermore, we show the growth of Au nanoparticles on the surface of GaN nanowires in solution at room temperature. The work shown here is a first step toward engineering properties that are crucial for the rational design and synthesis of a new class of photocatalytic materials. The hybrid structures were characterized by various techniques, including photoluminescence (PL), energy dispersive x-ray spectroscopy (EDS), transmission and scanning electron microscopy (TEM and SEM), and x-ray diffraction (XRD).

  1. Defect reduction in epitaxial GaSb grown on nanopatterned GaAs substrates using full wafer block copolymer lithography

    SciTech Connect

    Jha, Smita; Liu, C.-C.; Nealey, P. F.; Kuech, T. F.; Kuan, T. S.; Babcock, S. E.; Park, J. H.; Mawst, L. J.

    2009-08-10

    Defect reduction in the large lattice mismatched system of GaSb on GaAs, {approx}7%, was accomplished using full wafer block copolymer (BCP) lithography. A self-assembled BCP mask layer was used to generate a hexagonal pattern of {approx}20 nm holes on {approx}40 nm centers in a 20 nm SiO{sub 2} layer. GaSb growth initially takes place selectively within these holes leading to a dense array of small, strain-relaxed epitaxial GaSb islands. The GaSb grown on the patterned SiO{sub 2} layer exhibits a reduction in the x-ray linewidth attributed to a decrease in the threading dislocation density when compared to blanket pseudomorphic film growth.

  2. Structural and emission properties of InGaAs/GaAs quantum dots emitting at 1.3??m

    SciTech Connect

    Goldmann, Elias Jahnke, Frank; Paul, Matthias; Kettler, Jan; Jetter, Michael; Michler, Peter; Krause, Florian F.; Mller, Knut; Mehrtens, Thorsten; Rosenauer, Andreas

    2014-10-13

    A combined experimental and theoretical study of InGaAs/GaAs quantum dots (QDs) emitting at 1.3??m under the influence of a strain-reducing InGaAs quantum well is presented. We demonstrate a red shift of 2040?nm observed in photoluminescence spectra due to the quantum well. The InGaAs/GaAs QDs grown by metal organic vapor phase epitaxy show a bimodal height distribution (1?nm and 5?nm) and indium concentrations up to 90%. The emission properties are explained with combined tight-binding and configuration-interaction calculations of the emission wavelengths in conjunction with high-resolution scanning transmission electron microscopy investigations of QD geometry and indium concentrations in the QDs, which directly enter the calculations. QD geometries and concentration gradients representative for the ensemble are identified.

  3. Progress toward technology transition of GaInP{sub 2}/GaAs/Ge multijunction solar cells

    SciTech Connect

    Keener, D.N.; Marvin, D.C.; Brinker, D.J.; Curtis, H.B.; Price, P.M.

    1997-12-31

    The objective of the joint WL/PL/NASA Multijunction Solar Cell Manufacturing Technology (ManTech) Program is to scale up high efficiency GaInP{sub 2}/GaAs/Ge multijunction solar cells to production size, quantity, and yield while limiting the production cost/Watt ($/W) to 15% over GaAs cells. Progress made by the program contractors, Spectrolab and TECSTAR, include, respectively, best cell efficiencies of 25.76% and 24.7% and establishment of 24.2% and 23.8% lot average efficiency baseline designs. The paper also presents side-by-side testing results collected by Phillips Laboratory and NASA Lewis on Phase 1 deliverable cells, which shows compliance with program objectives. Cell performance, pre- and post-radiation, and temperature coefficient results on initial production GaInP{sub 2}/GaAs/Ge solar cells will be presented.

  4. Optical properties of multi-stacked InGaAs/GaNAs quantum dot solar cell fabricated on GaAs (311)B substrate

    SciTech Connect

    Shoji, Yasushi; Akimoto, Katsuhiro; Okada, Yoshitaka

    2012-09-15

    Quantum dot solar cells (QDSCs) comprised of 10 stacked pairs of strain-compensated InGaAs/GaNAs QD structure have been fabricated by atomic hydrogen-assisted molecular beam epitaxy. A homogeneous and high-density QD array structure with improved in-plane ordering and total density of {approx}10{sup 12} cm{sup -2} has been achieved on GaAs (311)B grown at 460 Degree-Sign C after stacking. The external quantum efficiency (EQE) of InGaAs/GaNAs QDSC increases in the longer wavelength range due to additive contribution from QD layers inserted in the intrinsic region. The short-circuit current density measured for QDSC is 17.2 mA/cm{sup 2} compared to 14.8 mA/cm{sup 2} of GaAs reference cell. Further, an increase in EQE due to photocurrent production by 2-step photon absorption has been observed at room temperature though it is still small at around 0.1%.

  5. Single photon emission from site-controlled InGaN/GaN quantum dots

    SciTech Connect

    Zhang, Lei; Hill, Tyler A.; Deng, Hui; Teng, Chu-Hsiang; Lee, Leung-Kway; Ku, Pei-Cheng

    2013-11-04

    Single photon emission was observed from site-controlled InGaN/GaN quantum dots. The single-photon nature of the emission was verified by the second-order correlation function up to 90 K, the highest temperature to date for site-controlled quantum dots. Micro-photoluminescence study on individual quantum dots showed linearly polarized single exciton emission with a lifetime of a few nanoseconds. The dimensions of these quantum dots were well controlled to the precision of state-of-the-art fabrication technologies, as reflected in the uniformity of their optical properties. The yield of optically active quantum dots was greater than 90%, among which 13%–25% exhibited single photon emission at 10 K.

  6. Room temperature spin transport in undoped (110) GaAs/AlGaAs quantum wells

    SciTech Connect

    Yokota, Nobuhide Aoshima, Yohei; Ikeda, Kazuhiro; Kawaguchi, Hitoshi

    2014-02-17

    We are reporting on our first observation of a micrometer-order electron spin transport in a (110) GaAs/AlGaAs multiple quantum well (QW) at room temperature using a space- and time-resolved Kerr rotation technique. A 37-μm transport was observed within an electron spin lifetime of 1.2 ns at room temperature when using an in-plane electric field of 1.75 kV/cm. The spatio-temporal profiles of electron spins were well reproduced by the spin drift-diffusion equations coupled with the Poisson equation, supporting the validity of the measurement. The results suggest that (110) QWs are useful as a spin transport layer for semiconductor spintronic devices operating at room temperature.

  7. Raman spectroscopy of GaP/GaNP core/shell nanowires

    SciTech Connect

    Dobrovolsky, A.; Chen, W. M.; Buyanova, I. A.; Sukrittanon, S.; Kuang, Y. J.; Tu, C. W.

    2014-11-10

    Raman spectroscopy is employed to characterize structural and phonon properties of GaP/GaNP core/shell nanowires (NWs) grown by molecular beam epitaxy on Si substrates. According to polarization-dependent measurements performed on single NWs, the dominant Raman modes associated with zone-center optical phonons obey selection rules in a zinc-blende lattice, confirming high crystalline quality of the NWs. Two additional modes at 360 and 397 cm{sup −1} that are specific to the NW architecture are also detected in resonant Raman spectra and are attributed to defect-activated scattering involving zone-edge transverse optical phonons and surface optical phonons, respectively. It is concluded that the formation of the involved defect states are mainly promoted during the NW growth with a high V/III ratio.

  8. Large linear magnetoresistance in a GaAs/AlGaAs heterostructure

    SciTech Connect

    Aamir, Mohammed Ali Goswami, Srijit Ghosh, Arindam; Baenninger, Matthias; Farrer, Ian; Ritchie, David A.; Tripathi, Vikram; Pepper, Michael

    2013-12-04

    We report non-saturating linear magnetoresistance (MR) in a two-dimensional electron system (2DES) at a GaAs/AlGaAs heterointerface in the strongly insulating regime. We achieve this by driving the gate voltage below the pinch-off point of the device and operating it in the non-equilibrium regime with high source-drain bias. Remarkably, the magnitude of MR is as large as 500% per Tesla with respect to resistance at zero magnetic field, thus dwarfing most non-magnetic materials which exhibit this linearity. Its primary advantage over most other materials is that both linearity and the enormous magnitude are retained over a broad temperature range (0.3 K to 10 K), thus making it an attractive candidate for cryogenic sensor applications.

  9. Sidewall passivation for InGaN/GaN nanopillar light emitting diodes

    SciTech Connect

    Choi, Won Hyuck; Abraham, Michael; Yu, Shih-Ying; You, Guanjun; Liu, Jie; Wang, Li; Xu, Jian; Mohney, Suzanne E.

    2014-07-07

    We studied the effect of sidewall passivation on InGaN/GaN multiquantum well-based nanopillar light emitting diode (LED) performance. In this research, the effects of varying etch rate, KOH treatment, and sulfur passivation were studied for reducing nanopillar sidewall damage and improving device efficiency. Nanopillars prepared under optimal etching conditions showed higher photoluminescence intensity compared with starting planar epilayers. Furthermore, nanopillar LEDs with and without sulfur passivation were compared through electrical and optical characterization. Suppressed leakage current under reverse bias and four times higher electroluminescence (EL) intensity were observed for passivated nanopillar LEDs compared with unpassivated nanopillar LEDs. The suppressed leakage current and EL intensity enhancement reflect the reduction of non-radiative recombination at the nanopillar sidewalls. In addition, the effect of sulfur passivation was found to be very stable, and further insight into its mechanism was gained through transmission electron microscopy.

  10. Evaluation of the two-photon absorption characteristics of GaSb/GaAs quantum rings

    SciTech Connect

    Wagener, M. C.; Botha, J. R.; Carrington, P. J.; Krier, A.

    2014-07-28

    The optical parameters describing the sub-bandgap response of GaSb/GaAs quantum rings solar cells have been obtained from photocurrent measurements using a modulated pseudo-monochromatic light source in combination with a second, continuous photo-filling source. By controlling the charge state of the quantum rings, the photoemission cross-sections describing the two-photon sub-bandgap transitions could be determined independently. Temperature dependent photo-response measurements also revealed that the barrier for thermal hole emission from the quantum rings is significantly below the quantum ring localisation energy. The temperature dependence of the sub-bandgap photo-response of the solar cell is also described in terms of the photo- and thermal-emission characteristics of the quantum rings.

  11. Ultrafast dynamics of type-II GaSb/GaAs quantum dots

    SciTech Connect

    Komolibus, K.; Piwonski, T.; Gradkowski, K.; Reyner, C. J.; Liang, B.; Huffaker, D. L.; Huyet, G.; Houlihan, J.

    2015-01-19

    In this paper, room temperature two-colour pump-probe spectroscopy is employed to study ultrafast carrier dynamics in type-II GaSb/GaAs quantum dots. Our results demonstrate a strong dependency of carrier capture/escape processes on applied reverse bias voltage, probing wavelength and number of injected carriers. The extracted timescales as a function of both forward and reverse bias may provide important information for the design of efficient solar cells and quantum dot memories based on this material. The first few picoseconds of the dynamics reveal a complex behaviour with an interesting feature, which does not appear in devices based on type-I materials, and hence is linked to the unique carrier capture/escape processes possible in type-II structures.

  12. Characterization of Cu(In,Ga)Se2 (CIGS) films with varying gallium ratios

    SciTech Connect

    Claypoole, Jesse; Peace, Bernadette; Sun, Neville; Dwyer, Dan; Eisaman, Matthew D.; Haldar, Pradeep; Efstathiadis, Harry

    2015-09-05

    Cu(In1-x,Gax)Se2 (CIGS) absorber layers were deposited on molybdenum (Mo) coated soda-lime glass substrates with varying Ga content (described as Ga/(In+Ga) ratios) with respect to depth. As the responsible mechanisms for the limitation of the performance of the CIGS solar cells with high Ga contents are not well understood, the goal of this work was to investigate different properties of CIGS absorber films with Ga/(In+Ga) ratios varied between 0.29 and 0.41 (as determined by X-ray florescence spectroscopy (XRF)) in order to better understand the role that the Ga content has on film quality. The Ga grading in the CIGS layer has the effect causing a higher bandgap toward the surface and Mo contact while the band gap in the middle of the CIGS layer is lower. Also, a wider and larger Ga/(In+Ga) grading dip located deeper in the CIGS absorber layers tend to produce larger grains in the regions of the films that have lower Ga/(In+Ga) ratios. It was found that surface roughness decreases from 51.2 nm to 41.0 nm with increasing Ga/(In+Ga) ratios. However, the surface roughness generally decreases if the Ga grading occurs deeper in the absorber layer.

  13. Thermal Design and Characterization of Heterogeneously Integrated InGaP/GaAs HBTs

    DOE PAGES [OSTI]

    Choi, Sukwon; Peake, Gregory M.; Keeler, Gordon A.; Geib, Kent M.; Briggs, Ronald D.; Beechem, Thomas E.; Shaffer, Ryan A.; Clevenger, Jascinda; Patrizi, Gary A.; Klem, John F.; et al

    2016-04-21

    Flip-chip heterogeneously integrated n-p-n InGaP/GaAs heterojunction bipolar transistors (HBTs) with integrated thermal management on wide-bandgap AlN substrates followed by GaAs substrate removal are demonstrated. Without thermal management, substrate removal after integration significantly aggravates self-heating effects, causing poor I–V characteristics due to excessive device self-heating. An electrothermal codesign scheme is demonstrated that involves simulation (design), thermal characterization, fabrication, and evaluation. Thermoreflectance thermal imaging, electrical-temperature sensitive parameter-based thermometry, and infrared thermography were utilized to assess the junction temperature rise in HBTs under diverse configurations. In order to reduce the thermal resistance of integrated devices, passive cooling schemes assisted by structural modification, i.e.,more » positioning indium bump heat sinks between the devices and the carrier, were employed. By implementing thermal heat sinks in close proximity to the active region of flip-chip integrated HBTs, the junction-to-baseplate thermal resistance was reduced over a factor of two, as revealed by junction temperature measurements and improvement of electrical performance. In conclusion, the suggested heterogeneous integration method accounts for not only electrical but also thermal requirements providing insight into realization of advanced and robust III–V/Si heterogeneously integrated electronics.« less

  14. Germanium subcells for multijunction GaInP/GaInAs/Ge solar cells

    SciTech Connect

    Kalyuzhnyy, N. A.; Gudovskikh, A. S.; Evstropov, V. V.; Lantratov, V. M.; Mintairov, S. A.; Timoshina, N. Kh.; Shvarts, M. Z.; Andreev, V. M.

    2010-11-15

    Photovoltaic converters based on n-GaInP/n-p-Ge heterostructures grown by the OMVPE under different conditions of formation of the p-n junction are studied. The heterostructures are intended for use as narrow-gap subcells of the GaInP/GaInAs/Ge three-junction solar cells. It is shown that, in Ge p-tn junctions, along with the diffusion mechanism, the tunneling mechanism of the current flow exists; therefore, the two-diode electrical equivalent circuit of the Ge p-n junction is used. The diode parameters are determined for both mechanisms from the analysis of both dark and 'light' current-voltage dependences. It is shown that the elimination of the component of the tunneling current allows one to increase the efficiency of the Ge subcell by {approx}1% with conversion of nonconcentrated solar radiation. The influence of the tunneling current on the efficiency of the Ge-based devices can be in practice reduced to zero at photogenerated current density of {approx}1.5 A/cm{sup 2} due to the use of the concentrated solar radiation.

  15. Transport properties of InGaAs/GaAs Heterostructures with {delta}-doped quantum wells

    SciTech Connect

    Baidus, N. V.; Vainberg, V. V.; Zvonkov, B. N.; Pylypchuk, A. S. Poroshin, V. N.; Sarbey, O. G.

    2012-05-15

    The lateral transport of electrons in single- and double-well pseudomorphic GaAs/n-InGaAs/GaAs heterostructures with quantum wells 50-100 meV deep and impurity {delta}-layers in the wells, with concentrations in the range 10{sup 11} < N{sub s} < 10{sup 12} cm{sup -2}, has been investigated. Single-well structures with a doped well at the center exhibit a nonmonotonic temperature dependence of the Hall coefficient and an increase in low-temperature electron mobility with an increase in the impurity concentration. The results obtained indicate that the impurity-band electron states play an important role in the conductivity of these structures. Involvement of the impurity band also allows to explain adequately the characteristics of the conductivity of double-well structures; in contrast to single-well structures, band bending caused by asymmetric doping is of great importance. The numerical calculations of conductivity within the model under consideration confirm these suggestions.

  16. Ferromagnetism in undoped One-dimensional GaN Nanowires

    SciTech Connect

    Jeganathan, K. E-mail: jagan@physics.bdu.ac.in; Purushothaman, V.; Debnath, R.; Arumugam, S.

    2014-05-15

    We report an intrinsic ferromagnetism in vertical aligned GaN nanowires (NW) fabricated by molecular beam epitaxy without any external catalyst. The magnetization saturates at ?0.75 emu/gm with the applied field of 3000 Oe for the NWs grown under the low-Gallium flux of 2.4 10{sup ?8} mbar. Despite a drop in saturation magnetization, narrow hysteresis loop remains intact regardless of Gallium flux. Magnetization in vertical standing GaN NWs is consistent with the spectral analysis of low-temperature photoluminescence pertaining to Ga-vacancies associated structural defects at the nanoscale.

  17. Characterization of Zns-GaP Naon-composites

    SciTech Connect

    Todd, V.

    1993-12-09

    It proved possible to produce consistent, high-quality nanocrystalline ZnS powders with grain sizes as small as 8 nm. These powders are nano-porous and are readily impregnated with GaP precursor, although inconsistently. Both crystal structure and small grain size of the ZnS can be maintained through the use of GaP. Heat treatment of the impregnated powders results in a ZnS-GaP composite structure where the grain sizes of the phases are on the order of 10--20 nm. Conventional powder processing should be able to produce optically dense ceramic compacts with improved mechanical properties and suitable IR transmission.

  18. Quaternary AlInGaN/InGaN quantum well on vicinal c-plane substrate for high emission intensity of green wavelengths

    SciTech Connect

    Park, Seoung-Hwan; Pak, Y. Eugene; Park, Chang Young; Mishra, Dhaneshwar; Yoo, Seung-Hyun; Cho, Yong-Hee Shim, Mun-Bo; Kim, Sungjin

    2015-05-14

    Electronic and optical properties of non-trivial semipolar AlInGaN/InGaN quantum well (QW) structures are investigated by using the multiband effective-mass theory and non-Markovian optical model. On vicinal c-plane GaN substrate miscut by a small angle (??GaN/InGaN system is shown to have ?3 times larger spontaneous emission peak intensity than the conventional InGaN/GaN system at green wavelength. It is attributed to much larger optical matrix element of the quaternary AlInGaN/InGaN system, derived from the reduction of internal electric field induced by polarizations. This effect exceeds the performance-degrading factor of smaller quasi-Fermi-level separation for the quaternary AlInGaN/InGaN system than that for the conventional InGaN/GaN system. Results indicate that the use of quaternary III-nitride QWs on vicinal substrates may be beneficial in improving the performance of optical devices emitting green light.

  19. Emission properties of InGaAs/GaAs heterostructures with quantum wells and dots after irradiation with neutrons

    SciTech Connect

    Baidus, N. V.; Vikhrova, O. V. Zvonkov, B. N.; Malysheva, E. I.; Trufanov, A. N.

    2015-03-15

    The effect of neutron radiation on the luminescence of InGaAs/GaAs heterostructures with quantum wells and quantum dots is studied. It is found that neutron radiation results both in the formation of defects and in the radiation-induced annealing of growth-related defects. Quantum dots are more stable to neutron radiation in comparison with quantum wells. It is shown that the layer of InGaAs/GaAs quantum dots located near the surface is less sensitive to irradiation with neutrons compared with a similar layer located in the bulk. In the first case, one can observe an increase in the photoluminescence and electroluminescence intensities after irradiation with neutrons, which is related to the effects of radiation-induced annealing. The pronounced effect of elastic strains in the InGaAs/GaAs quantum wells on the extent of quenching of the photoluminescence intensity upon irradiation with neutrons is revealed. In heterostructures with quantum wells, the effect of radiation-induced annealing manifests itself in a shift of the photoluminescence peak to longer wavelengths as a result of a decrease in elastic strains upon irradiation with neutrons. Doping of the GaAs buffer layer with silicon also reduces the value of this spectral shift.

  20. Outdoor Testing of GaInP2/GaAs Tandem Cells with Top Cell Thickness Varied

    SciTech Connect

    McMahon, W. E.; Emergy, K. E.; Friedman, D. J.; Ottoson, L.; Young, M. S.; Ward, J. S.; Kramer, C. M.; Duda, A.; Kurtz, S.

    2005-08-01

    In this study, we measure the performance of GaInP2/GaAs tandem cells under direct beam sunlight outdoors in order to quantify their sensitivity to both spectral variation and GaInP2 top-cell thickness. A set of cells with five different top-cell thicknesses was mounted on a two-axis tracker with the incident sunlight collimated to exclude all except the direct beam. Current-voltage (I-V) curves were taken throughout the course of several days, along with measurements of the direct solar spectrum. Our two major conclusions are: (1) GaInP2/GaAs tandem cells designed for either the ASTM G-173 direct (G-173D) spectrum or the "air mass 1.5 global" (AM1.5G) spectrum perform the best, and (2) cells can be characterized indoors and modeled using outdoor spectra with the same result. These results are equally valid for GaInP2/GaAs/Ge triple-junction cells.

  1. Local Structures and Interface Morphology of InGaAsN Thin Films Grown on GaAs

    SciTech Connect

    Allerman, A.A.; Chen, J.G.; Geisz, J.F.; Huang, S.; Hulbert, S.L.; Jones, E.D.; Kao, Y.H.; Kurtz, S.; Kurtz, S.R.; Olson, J.M.; Soo, Y.L.

    1999-02-23

    The compound semiconductor system InGaAsN exhibits many intriguing properties which are particularly useful for the development of innovative high efficiency thin film solar cells and long wavelength lasers. The bandgap in these semiconductors can be varied by controlling the content of N and In and the thin films can yet be lattice-matched to GaAs. In the present work, x-ray absorption fine structure (XAFS) and grazing incidence x-ray scattering (GIXS) techniques have been employed to probe the local environment surrounding both N and In atoms as well as the interface morphology of InGaAsN thin films epitaxially grown on GaAs. The soft x-ray XAFS results around nitrogen K-edge reveal that N is in the sp{sup 3} hybridized bonding configuration in InGaAsN and GaAsN, suggesting that N impurities most likely substitute for As sites in these two compounds. The results of In K-edge XAFS suggest a possible trend of a slightly larger coordination number of As nearest neighbors around In atoms in InGaAsN samples with a narrower bandgap whereas the In-As interatomic distance remains practically the same as in InAs within the experimental uncertainties. These results combined suggest that N-substitution of the As sites plays an important role of bandgap-narrowing while in the meantime counteracting the compressive strain caused by In-doping. Grazing incidence x-ray scattering (GIXS) experiments verify that InGaAsN thin films can indeed form very smooth interfaces with GaAs yielding an average interfacial roughness of 5-20{angstrom}.

  2. Electrical spin injection using GaCrN in a GaN based spin light emitting diode

    SciTech Connect

    Banerjee, D.; Ganguly, S.; Saha, D.; Adari, R.; Sankaranarayan, S.; Kumar, A.; Aldhaheri, R. W.; Hussain, M. A.; Balamesh, A. S.

    2013-12-09

    We have demonstrated electrical spin-injection from GaCrN dilute magnetic semiconductor (DMS) in a GaN-based spin light emitting diode (spin-LED). The remanent in-plane magnetization of the thin-film semiconducting ferromagnet has been used for introducing the spin polarized electrons into the non-magnetic InGaN quantum well. The output circular polarization obtained from the spin-LED closely follows the normalized in-plane magnetization curve of the DMS. A saturation circular polarization of ?2.5% is obtained at 200?K.

  3. Microscopic, electrical and optical studies on InGaN/GaN quantum wells based LED devices

    SciTech Connect

    Mutta, Geeta Rani; Venturi, Giulia; Castaldini, Antonio; Cavallini, Anna

    2014-02-21

    We report here on the micro structural, electronic and optical properties of a GaN-based InGaN/GaN MQW LED grown by the MOVPE method. The present study shows that the threading dislocations present in these LED structures are terminated as V pits at the surface and have an impact on the electrical and optical activity of these devices. It has been pointed that these dislocations were of edge, screw and mixed types. EBIC maps suggest that the electrically active defects are screw and mixed dislocations and behave as nonradiative recombinant centres.

  4. Effects of light illumination on electron velocity of AlGaN/GaN heterostructures under high electric field

    SciTech Connect

    Guo, Lei; Yang, Xuelin Cheng, Jianpeng; Sang, Ling; Xu, Fujun; Tang, Ning; Feng, Zhihong; Lv, Yuanjie; Wang, Xinqiang; Shen, B.; Ge, Weikun

    2014-12-15

    We have investigated the variation of electron velocity in AlGaN/GaN heterostructures depending on illuminating light intensity and wavelength. It is shown that the electron velocity at high electric field increases under above-band light illumination. This electron velocity enhancement is found to be related to the photo-generated cold holes which interact with hot electrons and thus accelerate the energy relaxation at high electric field. The results suggest an alternative way to improve the electron energy relaxation rate and hence the electron velocity in GaN based heterostructures.

  5. High-power InGaAs/GaAs quantum-well laser with enhanced broad spectrum of stimulated emission

    SciTech Connect

    Wang, Huolei; Yu, Hongyan; Zhou, Xuliang; Kan, Qiang; Yuan, Lijun; Wang, Wei; Pan, Jiaoqing; Chen, Weixi; Ding, Ying

    2014-10-06

    We report the demonstration of an InGaAs/GaAs quantum well (QW) broadband stimulated emission laser with a structure that integrated a GaAs tunnel junction with two QW active regions. The laser exhibits ultrabroad lasing spectral coverage of ?51?nm at a center wavelength of 1060?nm with a total emission power of 790 mW, corresponding to a high average spectral power density of 15.5 mW/nm, under pulsed current conditions. Compared to traditional lasers, this laser with an asymmetric separate-confinement heterostructure shows broader lasing bandwidth and higher spectral power density.

  6. Characterization of Cu(In,Ga)Se2 (CIGS) films with varying gallium ratios

    DOE PAGES [OSTI]

    Claypoole, Jesse; Peace, Bernadette; Sun, Neville; Dwyer, Dan; Eisaman, Matthew D.; Haldar, Pradeep; Efstathiadis, Harry

    2015-09-05

    Cu(In1-x,Gax)Se2 (CIGS) absorber layers were deposited on molybdenum (Mo) coated soda-lime glass substrates with varying Ga content (described as Ga/(In+Ga) ratios) with respect to depth. As the responsible mechanisms for the limitation of the performance of the CIGS solar cells with high Ga contents are not well understood, the goal of this work was to investigate different properties of CIGS absorber films with Ga/(In+Ga) ratios varied between 0.29 and 0.41 (as determined by X-ray florescence spectroscopy (XRF)) in order to better understand the role that the Ga content has on film quality. The Ga grading in the CIGS layer hasmore » the effect causing a higher bandgap toward the surface and Mo contact while the band gap in the middle of the CIGS layer is lower. Also, a wider and larger Ga/(In+Ga) grading dip located deeper in the CIGS absorber layers tend to produce larger grains in the regions of the films that have lower Ga/(In+Ga) ratios. It was found that surface roughness decreases from 51.2 nm to 41.0 nm with increasing Ga/(In+Ga) ratios. However, the surface roughness generally decreases if the Ga grading occurs deeper in the absorber layer.« less

  7. Radiation damage of GaAs thin-film solar cells on Si substrates

    SciTech Connect

    Itoh, Y.; Yamaguchi, M.; Nishioka, T.; Yamamoto, A.

    1987-01-15

    1-MeV electron irradiation damages in GaAs thin-film solar cells on Si substrates are examined for the first time. Damage constant for minority-carrier diffusion length in GaAs heteroepitaxial films on Si substrates is found to be the same as that in GaAs homoepitaxial films on GaAs substrates. This agreement suggests that GaAs/Si has the same defect introduction rate with radiation as GaAs/GaAs. The degradation of GaAs solar cells on Si with electron irradiation is less than that of GaAs solar cells on GaAs, because in the present, GaAs films on Si substrates have lower minority-carrier diffusion length compared to GaAs films on GaAs and these films are insensitive to radiation. The p/sup +/-p/sup +/-n AlGaAs-GaAs heteroface solar cell with junction depth of about 0.3 ..mu..m is concluded to be useful for a high-efficiency and radiation-resistant solar cell fabricated on a Si substrate.

  8. p-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas

    SciTech Connect

    Zhang, Zi-Hui; Tiam Tan, Swee; Kyaw, Zabu; Liu, Wei; Ji, Yun; Ju, Zhengang; Zhang, Xueliang [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore) [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Wei Sun, Xiao, E-mail: EXWSUN@ntu.edu.sg [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electronics and Electrical Engineering, South University of Science and Technology of China, Shenzhen, Guangdong 518055 (China); Volkan Demir, Hilmi, E-mail: VOLKAN@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electrical and Electronics, UNAM-Institute of Material Science and Nanotechnology, Bilkent University, Ankara TR-06800 (Turkey); Department of Physics, UNAM-Institute of Material Science and Nanotechnology, Bilkent University, Ankara TR-06800 (Turkey)

    2013-12-23

    Here, GaN/Al{sub x}Ga{sub 1-x}N heterostructures with a graded AlN composition, completely lacking external p-doping, are designed and grown using metal-organic-chemical-vapour deposition (MOCVD) system to realize three-dimensional hole gas (3DHG). The existence of the 3DHG is confirmed by capacitance-voltage measurements. Based on this design, a p-doping-free InGaN/GaN light-emitting diode (LED) driven by the 3DHG is proposed and grown using MOCVD. The electroluminescence, which is attributed to the radiative recombination of injected electrons and holes in InGaN/GaN quantum wells, is observed from the fabricated p-doping-free devices. These results suggest that the 3DHG can be an alternative hole source for InGaN/GaN LEDs besides common Mg dopants.

  9. Trap states in enhancement-mode double heterostructures AlGaN/GaN high electron mobility transistors with different GaN channel layer thicknesses

    SciTech Connect

    He, Yunlong; Wang, Chong Li, Xiangdong; Zhao, Shenglei; Mi, Minhan; Pei, Jiuqing; Zhang, Jincheng; Hao, Yue; Li, Peixian; Ma, Xiaohua

    2015-08-10

    This is the report on trap states in enhancement-mode AlGaN/GaN/AlGaN double heterostructures high electron mobility transistors by fluorine plasma treatment with different GaN channel layer thicknesses. Compared with the thick GaN channel layer sample, the thin one has smaller 2DEG concentration, lower electron mobility, lower saturation current, and lower peak transconductance, but it has a higher threshold voltage of 1.2 V. Deep level transient spectroscopy measurements are used to obtain the accurate capture cross section of trap states. By frequency dependent capacitance and conductance measurements, the trap state density of (1.98–2.56) × 10{sup 12 }cm{sup −2} eV{sup −1} is located at E{sub T} in a range of (0.37–0.44) eV in the thin sample, while the trap state density of (2.3–2.92) × 10{sup 12 }cm{sup −2} eV{sup −1} is located at E{sub T} in a range of (0.33–0.38) eV in the thick one. It indicates that the trap states in the thin sample are deeper than those in the thick one.

  10. Linear and nonlinear optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell spherical quantum dot

    SciTech Connect

    Emre Kavruk, Ahmet E-mail: aekavruk@gmail.com; Koc, Fatih; Sahin, Mehmet E-mail: mehsahin@gmail.com

    2013-11-14

    In this work, the optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell quantum dot heterostructure have been studied as a function of Al doping concentrations for cases with and without a hydrogenic donor atom. It has been observed that the absorption coefficient strength and/or resonant absorption wavelength can be adjusted by changing the Al content of inner-barrier and/or outer-barrier regions. Besides, it has been shown that the donor atom has an important effect on the control of the electronic and optical properties of the structure. The results have been presented as a function of the Al contents of the inner-barrier x and outer-barrier y regions and probable physical reasons have been discussed.

  11. Evaporation-based Ge/.sup.68 Ga Separation

    DOEpatents

    Mirzadeh, Saed; Whipple, Richard E.; Grant, Patrick M.; O'Brien, Jr., Harold A.

    1981-01-01

    Micro concentrations of .sup.68 Ga in secular equilibrium with .sup.68 Ge in strong aqueous HCl solution may readily be separated in ionic form from the .sup.68 Ge for biomedical use by evaporating the solution to dryness and then leaching the .sup.68 Ga from the container walls with dilute aqueous solutions of HCl or NaCl. The chloro-germanide produced during the evaporation may be quantitatively recovered to be used again as a source of .sup.68 Ga. If the solution is distilled to remove any oxidizing agents which may be present as impurities, the separation factor may easily exceed 10.sup.5. The separation is easily completed and the .sup.68 Ga made available in ionic form in 30 minutes or less.

  12. Intermixing of InGaAs/GaAs Quantum Well Using Multiple Cycles Annealing Cu-doped SiO2

    SciTech Connect

    Hongpinyo, V; Ding, Y H; Dimas, C E; Wang, Y; Ooi, B S; Qiu, W; Goddard, L L; Behymer, E M; Cole, G D; Bond, T C

    2008-06-11

    The authors investigate the effect of intermixing in InGaAs/GaAs quantum well structure using Cu-doped SiO{sub 2}. The incorporation of Cu into the silica film yields larger bandgap shift than typical impurity-free vacancy diffusion (IFVD) method at a lower activation temperature. We also observe enhancement of the photoluminescence (PL) signal from the intermixed InGaAs/GaAs quantum well structure after being cycle-annealed at 850 C.

  13. Towards Molecular Dynamics Simulations of InGaN Nanostructures.

    Office of Scientific and Technical Information (OSTI)

    (Conference) | SciTech Connect Towards Molecular Dynamics Simulations of InGaN Nanostructures. Citation Details In-Document Search Title: Towards Molecular Dynamics Simulations of InGaN Nanostructures. Abstract not provided. Authors: Zhou, Xiaowang ; Jones, Reese E. Publication Date: 2015-05-01 OSTI Identifier: 1258140 Report Number(s): SAND2015-4035C 584006 DOE Contract Number: AC04-94AL85000 Resource Type: Conference Resource Relation: Conference: Proposed for presentation at the 2015

  14. Towards Molecular Dynamics Simulations of InGaN Nanostructures.

    Office of Scientific and Technical Information (OSTI)

    (Conference) | SciTech Connect Towards Molecular Dynamics Simulations of InGaN Nanostructures. Citation Details In-Document Search Title: Towards Molecular Dynamics Simulations of InGaN Nanostructures. Abstract not provided. Authors: Zhou, Xiaowang ; Jones, Reese E. Publication Date: 2015-05-01 OSTI Identifier: 1258265 Report Number(s): SAND2015-4035C 584006 DOE Contract Number: AC04-94AL85000 Resource Type: Conference Resource Relation: Conference: Proposed for presentation at the 2015

  15. Athens, Greece: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    to: navigation, search Equivalent URI DBpedia GeoNames ID 264371 Coordinates 37.97918, 23.716647 Show Map Loading map... "minzoom":false,"mappingservice":"googlemaps3","type":...

  16. Athens, Ohio: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Ohio American Hydrogen Corporation Carbon Cycle Engineering Dovetail Solar and Wind DuPont Electronic Technologies, Inc. Global Cooling Inc. Panich + Noel Architects Panich,...

  17. Laser Gain and Threshold Properties in Compressive-Strained and Lattice-Matched GaInNAs/GaAs Quantum Wells

    SciTech Connect

    Chow, W.W.; Jones, E.D.; Modine, N.A.; Allerman, A.A.; Kurtz, S.R.

    1999-08-04

    The optical gain spectra for compressive-strained and lattice-matched GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of lasing threshold current density for different GAInNAs/GaAs laser structures.

  18. Broadband control of emission wavelength of InAs/GaAs quantum dots by GaAs capping temperature

    SciTech Connect

    Kaizu, Toshiyuki; Matsumura, Takuya; Kita, Takashi

    2015-10-21

    We investigated the effects of the GaAs capping temperature on the morphological and photoluminescence (PL) properties of InAs quantum dots (QDs) on GaAs(001). The broadband tuning of the emission wavelength from 1.1 to 1.3 μm was achieved at room temperature by only adjusting the GaAs capping temperature. As the capping temperature was decreased, the QD shrinkage due to In desorption and In-Ga intermixing during the capping process was suppressed. This led to QDs with a high aspect ratio, and resultantly, the emission wavelength shifted toward the longer-wavelength side. In addition, the linearly polarized PL intensity elucidated anisotropic characteristics reflecting the shape anisotropy of the embedded QDs, in which a marked change in polarization anisotropy occurred at capping temperatures lower than 460 °C.

  19. Polarization field engineering of GaN/AlN/AlGaN superlattices for enhanced thermoelectric properties

    SciTech Connect

    Sztein, Alexander; Bowers, John E.; DenBaars, Steven P.; Nakamura, Shuji

    2014-01-27

    A novel polarization field engineering based strategy to simultaneously achieve high electrical conductivity and low thermal conductivity in thermoelectric materials is demonstrated. Polarization based electric fields are used to confine electrons into two-dimensional electron gases in GaN/AlN/Al{sub 0.2}Ga{sub 0.8}N superlattices, resulting in improved electron mobilities as high as 1176 cm{sup 2}/Vs and in-plane thermal conductivity as low as 8.9 W/mK. The resulting room temperature ZT values reach 0.08, a factor of four higher than InGaN and twelve higher than GaN, demonstrating the potential benefits of this polarization based engineering strategy for improving the ZT and efficiencies of thermoelectric materials.

  20. A new InGaP/GaAs tunneling heterostructure-emitter bipolar transistor (T-HEBT)

    SciTech Connect

    Tsai, Jung-Hui; Lee, Ching-Sung; Lour, Wen-Shiung; Ma, Yung-Chun; Ye, Sheng-Shiun

    2011-05-15

    Excellent characteristics of an InGaP/GaAs tunneling heterostructure-emitter bipolar transistor (T-HEBT) are first demonstrated. The insertion of a thin n-GaAs emitter layer between tynneling confinement and base layers effectivelty eliminates the potential spike at base-emitter junction and reduces the collector-emitter offset voltage, while the thin InGaP tunneling confinement layer is employed to reduce the transporting time across emitter region for electrons and maintain the good confinement effect for holes. Experimentally, the studied T-HEBN exhibits a maximum current gain of 285, a relatively low offset voltage of 40 mW, and a current-gain cutoff frequency of 26.4 GHz.

  1. The design, construction, and monitoring of photovoltaic power system and solar thermal system on the Georgia Institute of Technology Aquatic Center. Volume 1

    SciTech Connect

    Long, R.C.

    1996-12-31

    This is a report on the feasibility study, design, and construction of a PV and solar thermal system for the Georgia Tech Aquatic Center. The topics of the report include a discussion of site selection and system selection, funding, design alternatives, PV module selection, final design, and project costs. Included are appendices describing the solar thermal system, the SAC entrance canopy PV mockup, and the PV feasibility study.

  2. Microsoft Word - greeneCV.doc

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    GA Married, 1 child EDUCATION: B.S. in Biology, Furman University, 1975 EMPLOYMENT ... of Georgia, Augusta, GA 1973-1975 Biology Department Laboratory Assistant (in the ...

  3. The first principle study of Ni{sub 2}ScGa and Ni{sub 2}TiGa

    SciTech Connect

    zduran, Mustafa; Turgut, Kemal; Arikan, Nihat; ?yigr, Ahmet; Candan, Abdullah

    2014-10-06

    We computed the electronic structure, elastic moduli, vibrational properties, and Ni{sub 2}TiGa and Ni{sub 2}ScGa alloys in the cubic L2{sub 1} structure. The obtained equilibrium lattice constants of these alloys are in good agreement with available data. In cubic systems, there are three independent elastic constants, namely C{sub 11}, C{sub 12} and C{sub 44}. We calculated elastic constants in L2{sub 1} structure for Ni{sub 2}TiGa and Ni{sub 2}ScGa using the energy-strain method. The electronic band structure, total and partial density of states for these alloys were investigated within density functional theory using the plane-wave pseudopotential method implemented in Quantum-Espresso program package. From band structure, total and projected density of states, we observed metallic characters of these compounds. The electronic calculation indicate that the predominant contributions of the density of states at Fermi level come from the Ni 3d states and Sc 3d states for Ni{sub 2}TiGa, Ni 3d states and Sc 3d states for Ni{sub 2}ScGa. The computed density of states at Fermi energy are 2.22 states/eV Cell for Ni{sub 2}TiGa, 0.76 states/eV Cell for Ni{sub 2}ScGa. The vibrational properties were obtained using a linear response in the framework at the density functional perturbation theory. For the alloys, the results show that the L2{sub 1} phase is unstable since the phonon calculations have imagine modes.

  4. Structural transformations in amorphous ↔ crystalline phase change of Ga-Sb alloys

    SciTech Connect

    Edwards, T. G.; Sen, S.; Hung, I.; Gan, Z.; Kalkan, B.; Raoux, S.

    2013-12-21

    Ga-Sb alloys with compositions ranging between ∼12 and 50 at. % Ga are promising materials for phase change random access memory applications. The short-range structures of two such alloys with compositions Ga{sub 14}Sb{sub 86} and Ga{sub 46}Sb{sub 54} are investigated, in their amorphous and crystalline states, using {sup 71}Ga and {sup 121}Sb nuclear magnetic resonance spectroscopy and synchrotron x-ray diffraction. The Ga and Sb atoms are fourfold coordinated in the as-deposited amorphous Ga{sub 46}Sb{sub 54} with nearly 40% of the constituent atoms being involved in Ga-Ga and Sb-Sb homopolar bonding. This necessitates extensive bond switching and elimination of homopolar bonds during crystallization. On the other hand, Ga and Sb atoms are all threefold coordinated in the as-deposited amorphous Ga{sub 14}Sb{sub 86}. Crystallization of this material involves phase separation of GaSb domains in Sb matrix and a concomitant increase in the Ga coordination number from 3 to 4. Results from crystallization kinetics experiments suggest that the melt-quenching results in the elimination of structural “defects” such as the homopolar bonds and threefold coordinated Ga atoms in the amorphous phases of these alloys, thereby rendering them structurally more similar to the corresponding crystalline states compared to the as-deposited amorphous phases.

  5. Mismatch relaxation by stacking fault formation of AlN islands in AlGaN/GaN structures on m-plane GaN substrates

    SciTech Connect

    Smalc-Koziorowska, Julita; Sawicka, Marta; Skierbiszewski, Czeslaw; Grzegory, Izabella

    2011-08-08

    We study the mismatch relaxation of 2-5 nm thin elongated AlN islands formed during growth of AlGaN on bulk m-plane GaN by molecular beam epitaxy. The relaxation of these m-plane AlN layers is anisotropic and occurs through the introduction of stacking faults in [0001] planes during island coalescence, while no relaxation is observed along the perpendicular [1120] direction. This anisotropy in the mismatch relaxation and the formation of stacking faults in the AlN islands are explained by the growth mode of the AlN platelets and their coalescence along the [0001] direction.

  6. Atomic-column scanning transmission electron microscopy analysis of misfit dislocations in GaSb/GaAs quantum dots

    DOE PAGES [OSTI]

    Chisholm, Matthew F.; Fernandez-Delgado, N.; Herrera, M.; Kamarudin, M. A.; Zhuang, Q. D.; Hayne, M.; Molina, S. I.

    2016-05-17

    The structural quality of GaSb/GaAs quantum dots (QDs) has been analyzed at atomic scale by aberration-corrected high-angle annular dark-field scanning transmission electron microscopy. In particular, we have studied the misfit dislocations that appear because of the high-lattice mismatch in the heterostructure. Our results have shown the formation of Lomer dislocations not only at the interface between the GaSb QDs and the GaAs substrate, but also at the interface with the GaAs capping layer, which is not a frequent observation. The analysis of these dislocations points to the existence of chains of dislocation loops around the QDs. The dislocation core ofmore » the observed defects has been characterized, showing that they are reconstructed Lomer dislocations, which have less distortion at the dislocation core in comparison to unreconstructed ones. As a result, strain measurements using geometric phase analysis show that these dislocations may not fully relax the strain due to the lattice mismatch in the GaSb QDs.« less

  7. Efficient carrier relaxation and fast carrier recombination of N-polar InGaN/GaN light emitting diodes

    SciTech Connect

    Feng, Shih-Wei Liao, Po-Hsun; Leung, Benjamin; Han, Jung; Yang, Fann-Wei; Wang, Hsiang-Chen

    2015-07-28

    Based on quantum efficiency and time-resolved electroluminescence measurements, the effects of carrier localization and quantum-confined Stark effect (QCSE) on carrier transport and recombination dynamics of Ga- and N-polar InGaN/GaN light-emitting diodes (LEDs) are reported. The N-polar LED exhibits shorter ns-scale response, rising, delay, and recombination times than the Ga-polar one does. Stronger carrier localization and the combined effects of suppressed QCSE and electric field and lower potential barrier acting upon the forward bias in an N-polar LED provide the advantages of more efficient carrier relaxation and faster carrier recombination. By optimizing growth conditions to enhance the radiative recombination, the advantages of more efficient carrier relaxation and faster carrier recombination in a competitive performance N-polar LED can be realized for applications of high-speed flash LEDs. The research results provide important information for carrier transport and recombination dynamics of an N-polar InGaN/GaN LED.

  8. Effects of high-temperature AIN buffer on the microstructure of AlGaN/GaN HEMTs

    SciTech Connect

    Coerekci, S.; Oeztuerk, M. K.; Yu, Hongbo; Cakmak, M.; Oezcelik, S.; Oezbay, E.

    2013-06-15

    Effects on AlGaN/GaN high-electron-mobility transistor structure of a high-temperature AlN buffer on sapphire substrate have been studied by high-resolution x-ray diffraction and atomic force microscopy techniques. The buffer improves the microstructural quality of GaN epilayer and reduces approximately one order of magnitude the edge-type threading dislocation density. As expected, the buffer also leads an atomically flat surface with a low root-mean-square of 0.25 nm and a step termination density in the range of 10{sup 8} cm{sup -2}. Due to the high-temperature buffer layer, no change on the strain character of the GaN and AlGaN epitaxial layers has been observed. Both epilayers exhibit compressive strain in parallel to the growth direction and tensile strain in perpendicular to the growth direction. However, an high-temperature AlN buffer layer on sapphire substrate in the HEMT structure reduces the tensile stress in the AlGaN layer.

  9. ,"Georgia Natural Gas Price Sold to Electric Power Consumers (Dollars per Thousand Cubic Feet)"

    Energy Information Administration (EIA) (indexed site)

    Annual",2015 ,"Release Date:","10/31/2016" ,"Next Release Date:","11/30/2016" ,"Excel File Name:","n3045ga3a.xls" ,"Available from Web Page:","http://tonto.eia.gov/dnav/ng/hist/n3045ga3a.htm" ,"Source:","Energy Information Administration" ,"For Help, Contact:","infoctr@eia.doe.gov" ,,"(202) 586-8800",,,"10/28/2016 9:35:52 PM" "Back to

  10. ,"Georgia Natural Gas Price Sold to Electric Power Consumers (Dollars per Thousand Cubic Feet)"

    Energy Information Administration (EIA) (indexed site)

    Monthly","8/2016" ,"Release Date:","10/31/2016" ,"Next Release Date:","11/30/2016" ,"Excel File Name:","n3045ga3m.xls" ,"Available from Web Page:","http://tonto.eia.gov/dnav/ng/hist/n3045ga3m.htm" ,"Source:","Energy Information Administration" ,"For Help, Contact:","infoctr@eia.doe.gov" ,,"(202) 586-8800",,,"10/28/2016 9:35:52 PM" "Back

  11. High Voltage GaN Schottky Rectifiers

    SciTech Connect

    CAO,X.A.; CHO,H.; CHU,S.N.G.; CHUO,C.-C.; CHYI,J.-I.; DANG,G.T.; HAN,JUNG; LEE,C.-M.; PEARTON,S.J.; REN,F.; WILSON,R.G.; ZHANG,A.P.

    1999-10-25

    Mesa and planar GaN Schottky diode rectifiers with reverse breakdown voltages (V{sub RB}) up to 550V and >2000V, respectively, have been fabricated. The on-state resistance, R{sub ON}, was 6m{Omega}{center_dot} cm{sup 2} and 0.8{Omega}cm{sup 2}, respectively, producing figure-of-merit values for (V{sub RB}){sup 2}/R{sub ON} in the range 5-48 MW{center_dot}cm{sup -2}. At low biases the reverse leakage current was proportional to the size of the rectifying contact perimeter, while at high biases the current was proportional to the area of this contact. These results suggest that at low reverse biases, the leakage is dominated by the surface component, while at higher biases the bulk component dominates. On-state voltages were 3.5V for the 550V diodes and {ge}15 for the 2kV diodes. Reverse recovery times were <0.2{micro}sec for devices switched from a forward current density of {approx}500A{center_dot}cm{sup -2} to a reverse bias of 100V.

  12. Nano-scale luminescence characterization of individual InGaN/GaN quantum wells stacked in a microcavity using scanning transmission electron microscope cathodoluminescence

    SciTech Connect

    Schmidt, Gordon Mller, Marcus; Veit, Peter; Bertram, Frank; Christen, Jrgen; Glauser, Marlene; Carlin, Jean-Franois; Cosendey, Gatien; Butt, Raphal; Grandjean, Nicolas

    2014-07-21

    Using cathodoluminescence spectroscopy directly performed in a scanning transmission electron microscope at liquid helium temperatures, the optical and structural properties of a 62 InGaN/GaN multiple quantum well embedded in an AlInN/GaN based microcavity are investigated at the nanometer scale. We are able to spatially resolve a spectral redshift between the individual quantum wells towards the surface. Cathodoluminescence spectral linescans allow directly visualizing the critical layer thickness in the quantum well stack resulting in the onset of plastic relaxation of the strained InGaN/GaN system.

  13. Thermoelectric properties and nonstoichiometry of GaGeTe

    SciTech Connect

    Drasar, C.; Kucek, V.; Benes, L.; Lostak, P.; Vlcek, M.

    2012-09-15

    Polycrystalline samples of composition Ga{sub 1+x}Ge{sub 1-x}Te (x=-0.03 Division-Sign 0.07) and GaGeTe{sub 1-y} (y=-0.02 Division-Sign 0.02) were synthesized from elements of 5 N purity using a solid state reaction. The products of synthesis were identified by X-ray diffraction; phase purity and microstructure were examined by EDX/SEM. Samples for measurement of transport properties were prepared using hot-pressing. They were characterized by measurement of electrical conductivity, the Hall coefficient, and the Seebeck coefficient over a temperature range 80-480 K and of thermal conductivity over a temperature range 300-580 K. All samples show p-type conductivity. We discuss the influence of stoichiometry on the phase purity of the samples and on free carrier concentration. The investigation of thermoelectric properties shows that the power factor of these samples is low compared to state-of-the-art materials at room temperature but increases distinctly with temperature. - Graphical abstract: Structure and preparation of GaGeTe. Electrical conductivity {sigma}, the Hall coefficient R{sub H}, the Seebeck coefficient S and thermal conductivity {kappa} as a function of temperature for the Ga{sub 1.01}Ge{sub 0.99}Te{sub 0.99} sample. Highlights: Black-Right-Pointing-Pointer We explore thermoelectric and transport properties of Ga{sub 1+x}Ge{sub 1-x}Te and GaGeTe{sub 1-y}. Black-Right-Pointing-Pointer GaGeTe is p-type degenerate semiconductor; the hole concentration increase with x and y. Black-Right-Pointing-Pointer Maximum power factor {sigma}S{sup 2}=3.6 Multiplication-Sign 10{sup -4} Wm{sup -1} K{sup -2} at 475 K.

  14. High Quantum Efficiency AlGaN/InGaN Photodetectors

    SciTech Connect

    Buckley, James H; Leopold, Daniel

    2009-11-24

    High efficiency photon counting detectors in use today for high energy particle detection applications have a significant spectral mismatch with typical sources and have a number of practical problems compared with conventional bialkali photomultiplier tubes. Numerous high energy physics experiments that employ scintillation light detectors or Cherenkov detectors would benefit greatly from photomultipliers with higher quantum efficiencies. The need for extending the sensitivity of photon detectors to the blue and UV wavebands comes from the fact that both Cherenkov light and some scintillators have an emission spectrum which is peaked at short wavelengths. This research involves the development of high quantum efficiency, high gain, UV/blue photon counting detectors based on AlGaN/InGaN photocathode heterostructures grown by molecular beam epitaxy (MBE). The work could eventually lead to nearly ideal light detectors with a number of distinct advantages over existing technologies for numerous applications in high-energy physics and particle astrophysics. Potential advantages include much lower noise detection, better stability and radiation resistance than other cathode structures, very low radioactive background levels for deep underground experiments and high detection efficiency of individual UV-visible photons. We are also working on the development of photocathodes with intrinsic gain, initially improving the detection efficiency of hybrid semiconductor-vacuum tube devices, and eventually leading to an all-solid-state photomultiplier device.

  15. Enhanced optical property in quaternary GaInAsSb/AlGaAsSb quantum wells

    SciTech Connect

    Lin, Chien-Hung Lee, Chien-Ping

    2014-10-21

    High quality GaInAsSb/AlGaAsSb quantum wells (QWs) have been grown by molecular beam epitaxy using proper interface treatments. By controlling the group-V elements at interfaces, we obtained excellent optical quality QWs, which were free from undesired localized trap states, which may otherwise severely affect the exciton recombination. Strong and highly efficient exciton emissions up to room temperature with a wavelength of 2.2 μm were observed. A comprehensive investigation on the QW quality was carried out using temperature dependent and power dependent photoluminescence (PL) measurements. The PL emission intensity remains nearly constant at low temperatures and is free from the PL quenching from the defect induced localized states. The temperature dependent emission energy had a bulk-like behavior, indicating high quality well/barrier interfaces. Because of the uniformity of the QWs and smooth interfaces, the low temperature limit of inhomogeneous line width broadening is as small as 5 meV.

  16. The possibly important role played by Ga{sub 2}O{sub 3} during the activation of GaN photocathode

    SciTech Connect

    Fu, Xiaoqian E-mail: 214808748@qq.com; Wang, Honggang; Zhang, Junju; Li, Zhiming; Cui, Shiyao; Zhang, Lejuan

    2015-08-14

    Three different chemical solutions are used to remove the possible contamination on GaN surface, while Ga{sub 2}O{sub 3} is still found at the surface. After thermal annealing at 710 °C in the ultrahigh vacuum (UHV) chamber and activated with Cs/O, all the GaN samples are successfully activated to the effective negative electron affinity (NEA) photocathodes. Among all samples, the GaN sample with the highest content of Ga{sub 2}O{sub 3} after chemical cleaning obtains the highest quantum efficiency. By analyzing the property of Ga{sub 2}O{sub 3}, the surface processing results, and electron affinity variations during Cs and Cs/O{sub 2} deposition on GaN of other groups, it is suggested that before the adsorption of Cs, Ga{sub 2}O{sub 3} is not completely removed from GaN surface in our samples, which will combine with Cs and lead to a large decrease in electron affinity. Furthermore, the effective NEA is formed for GaN photocathode, along with the surface downward band bending. Based on this assumption, a new dipole model Ga{sub 2}O{sub 3}-Cs is suggested, and the experimental effects are explained and discussed.

  17. Strain relaxation in GaN/Al{sub x}Ga{sub 1-x}N superlattices grown by plasma-assisted molecular-beam epitaxy

    SciTech Connect

    Kotsar, Y.; Bellet-Amalric, E.; Das, A.; Monroy, E.; Sarigiannidou, E.

    2011-08-01

    We have investigated the misfit relaxation process in GaN/Al{sub x}Ga{sub 1-x}N (x = 0.1, 0.3, 0.44) superlattices (SL) deposited by plasma-assisted molecular beam epitaxy. The SLs under consideration were designed to achieve intersubband absorption in the mid-infrared spectral range. We have considered the case of growth on GaN (tensile stress) and on AlGaN (compressive stress) buffer layers, both deposited on GaN-on-sapphire templates. Using GaN buffer layers, the SL remains almost pseudomorphic for x = 0.1, 0.3, with edge-type threading dislocation densities below 9 x 10{sup 8} cm{sup -2} to 2 x 10{sup 9} cm{sup -2}. Increasing the Al mole fraction to 0.44, we observe an enhancement of misfit relaxation resulting in dislocation densities above 10{sup 10} cm{sup -2}. In the case of growth on AlGaN, strain relaxation is systematically stronger, with the corresponding increase in the dislocation density. In addition to the average relaxation trend of the SL, in situ measurements indicate a periodic fluctuation of the in-plane lattice parameter, which is explained by the different elastic response of the GaN and AlGaN surfaces to the Ga excess at the growth front. The results are compared with GaN/AlN SLs designed for near-infrared intersubband absorption.

  18. Enhanced sheet carrier densities in polarization controlled AlInN/AlN/GaN/InGaN field-effect transistor on Si (111)

    SciTech Connect

    Hennig, J. Dadgar, A.; Witte, H.; Bläsing, J.; Lesnik, A.; Strittmatter, A.; Krost, A.

    2015-07-15

    We report on GaN based field-effect transistor (FET) structures exhibiting sheet carrier densities of n = 2.9 10{sup 13} cm{sup −2} for high-power transistor applications. By grading the indium-content of InGaN layers grown prior to a conventional GaN/AlN/AlInN FET structure control of the channel width at the GaN/AlN interface is obtained. The composition of the InGaN layer was graded from nominally x{sub In} = 30 % to pure GaN just below the AlN/AlInN interface. Simulations reveal the impact of the additional InGaN layer on the potential well width which controls the sheet carrier density within the channel region of the devices. Benchmarking the In{sub x}Ga{sub 1−x}N/GaN/AlN/Al{sub 0.87}In{sub 0.13}N based FETs against GaN/AlN/AlInN FET reference structures we found increased maximum current densities of I{sub SD} = 1300 mA/mm (560 mA/mm). In addition, the InGaN layer helps to achieve broader transconductance profiles as well as reduced leakage currents.

  19. Alloy inhomogeneity and carrier localization in AlGaN sections and AlGaN/AlN nanodisks in nanowires with 240350?nm emission

    SciTech Connect

    Himwas, C.; Hertog, M. den; Dang, Le Si; Songmuang, R.; Monroy, E.

    2014-12-15

    We present structural and optical studies of AlGaN sections and AlGaN/AlN nanodisks (NDs) in nanowires grown by plasma-assisted molecular beam epitaxy. The Al-Ga intermixing at Al(Ga)N/GaN interfaces and the chemical inhomogeneity in AlGaN NDs evidenced by scanning transmission electron microscopy are attributed to the strain relaxation process. This interpretation is supported by the three-dimensional strain distribution calculated by minimizing the elastic energy in the structure. The alloy inhomogeneity increases with the Al content, leading to enhanced carrier localization signatures in the luminescence characteristics, i.e., red shift of the emission, s-shaped temperature dependence, and linewidth broadening. Despite these effects, the emission energy of AlGaN/AlN NDs can be tuned in the 240350?nm range with internal quantum efficiencies around 30%.

  20. Health assessment for Cedartown Industries, Cedartown, Polk County, Georgia, Region 4. CERCLIS No. GAD95840674. Preliminary report

    SciTech Connect

    Not Available

    1990-01-29

    The Cedartown Industries, Inc. site has been proposed for the National Priorities List (NPL) by the U.S. Environmental Protection Agency (EPA). The 7-acre site is located in Cedartown, Polk County, Georgia, in the northwest part of the State. In 1986, one sediment sample from an on-site impoundment and two soil samples (one background) were collected on-site and analyzed by EPD. Only Extraction Procedure (EP) Toxicity testing was performed on these samples. The test which measures the concentration of leachate generated from the soil showed leachate with lead concentrations up to 720 parts per million (ppm) and cadmium concentrations up to 1.4 ppm. Based on the information reviewed, ATSDR has concluded that the site is of potential public health concern because humans may be exposed to hazardous substances at concentrations that may result in adverse health effects. As noted in the Human Exposure Pathways Section above, human exposure to lead may occur via ingestion of, inhalation of, and dermal contact with surface water, sediments, soils, ground water, air, and food-chain entities.

  1. Vertical zone melt growth of GaAs

    SciTech Connect

    Henry, R.L.; Nordquist, P.E.R.; Gorman, R.J.

    1993-12-31

    A Vertical Zone Melt (VZM) technique has been applied to the single crystal growth of GaAs. A pyrolytic boron nitride crucible and a (100) oriented seed were used along with liquid encapsulation by boric oxide. In the case of GaAs, the ampoule was pressurized with either argon or argensic vapor from elemental arsenic at pressures ranging from 1 to 2 atmospheres. A molten zone length of 22 mm gave a growth interface which is nearly flat and resulted in routine single crystal growth. Temperature gradients of 4{degrees}C/cm. and 9{degrees}C/cm. have produced dislocation densities of <1000/cm{sup 2} and 2000-5000/cm{sup 2} respectively for 34 mm diameter crystals of GaAs. Post growth cooling rates for GaAs have been 35, 160 and 500{degrees}C/hr. The cooling rate has been found to affect the number and size of arsenic precipitates and the EL2 concentration in the GaAs crystal. The effects of these and other growth parameters on the crystalline perfection and electrical properties of the crystals will be discussed.

  2. SREL Reprint #3192

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    2 Gender Differences in Haemogregarine Infections in American Alligators (Alligator mississippiensis) at Savannah River, South Carolina, USA Andrew K. Davis1, Robert V. Horan, III2, Andrew M. Grosse2, Bess B. Harris2, Brian S. Metts2, David E. Scott2, and Tracey D. Tuberville2 1Odum School of Ecology, University of Georgia, Athens, Georgia 30602, USA 2Savannah River Ecology Laboratory, University of Georgia, Drawer E, Aiken, South Carolina 29802, USA Abstract: We report a host gender bias in

  3. SREL Reprint #3332

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    2 Characterization of microsatellite loci for an Australian epiphytic orchid, Dendrobium calamiforme, using Illumina sequencing Dorset W. Trapnell1, Rochelle R. Beasley2, Stacey L. Lance2, Ashley R. Field3,4, and Kenneth L. Jones5 1Plant Biology Department, University of Georgia, Athens, Georgia 30602 USA 2Savannah River Ecology Laboratory, University of Georgia, Aiken, South Carolina 29802 USA 3Queensland Herbarium, Department of Science, Information Technology and Innovation, Toowong,

  4. SREL Reprint #3364

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    4 Blood and plasma biochemistry reference intervals for wild juvenile American alligators (Alligator mississippiensis) Matthew T. Hamilton1,2, Caitlin A. Kupar1,2, Meghan D. Kelley3, John W. Finger Jr.1,3, and Tracey D. Tuberville1 1Savannah River Ecology Laboratory, University of Georgia, PO Drawer E, Aiken, South Carolina 29802, USA 2Warnell School of Forestry and Natural Resources, University of Georgia, 180 E Green Street, Athens, Georgia 30602, USA 3Department of Biological Sciences, Auburn

  5. SREL Reprint #3371

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    1 Patterns of amphibian infection prevalence across wetlands on the Savannah River Site, South Carolina, USA Cara N. Love1,2, Megan E. Winzeler1,2, Rochelle Beasley1, David E. Scott1, Schyler O. Nunziata3, and Stacey L. Lance1 1Savannah River Ecology Laboratory, University of Georgia, Aiken, South Carolina 29802, USA 2Odum School of Ecology, University of Georgia, Athens, Georgia 30602, USA 3Department of Biological Sciences, University of Kentucky, Lexington, Kentucky 40506, USA Abstract:

  6. Ge doped GaN with controllable high carrier concentration for...

    Office of Scientific and Technical Information (OSTI)

    Ge doped GaN with controllable high carrier concentration for plasmonic applications Citation Details In-Document Search Title: Ge doped GaN with controllable high carrier...

  7. Dislocation confinement in the growth of Na flux GaN on metalorganic...

    Office of Scientific and Technical Information (OSTI)

    Dislocation confinement in the growth of Na flux GaN on metalorganic chemical vapor deposition-GaN Citation Details In-Document Search Title: Dislocation confinement in the growth ...

  8. Site-controlled fabrication of Ga nanodroplets by focused ion beam

    SciTech Connect

    Xu, Xingliang; Wang, Zhiming M.; Wu, Jiang; Li, Handong; Zhou, Zhihua; Wang, Xiaodong

    2014-03-31

    Ga droplets are created by focused ion beam irradiation of GaAs surface. We report that ordered Ga droplets can be formed on the GaAs surface without any implantation damage. The droplets are characterized with bigger sizes than those droplets formed on damaged area. These aligned Ga droplets are formed via the migration of Ga atoms from ion irradiation area to the edge of undamaged GaAs surface and further nucleation into droplets. The morphological evolution and size distribution of these nanodroplets are investigated systematically with different beam irradiation time and incident angles. Based on this method, well positioned Ga nanodroplets, such as chains, are achieved by using focus ion beam patterning. The controllable assembly of droplets on undamaged semiconductor surface can be used to fabricate templates, to fabricate quantum structures and quantum devices by droplet epitaxy technique.

  9. Price of Elba Island, GA Natural Gas LNG Imports from Equatorial...

    Energy Information Administration (EIA) (indexed site)

    Feet) Price of Elba Island, GA Natural Gas LNG Imports from Equatorial Guinea (Dollars per ... U.S. Price of Liquefied Natural Gas Imports by Point of Entry Elba Island, GA LNG Imports ...

  10. Price of Elba Island, GA Natural Gas LNG Imports from Nigeria...

    Annual Energy Outlook

    Nigeria (Nominal Dollars per Thousand Cubic Feet) Price of Elba Island, GA Natural Gas LNG ... U.S. Price of Liquefied Natural Gas Imports by Point of Entry Elba Island, GA LNG Imports ...

  11. Bismuth-induced phase control of GaAs nanowires grown by molecular...

    Office of Scientific and Technical Information (OSTI)

    Bismuth-induced phase control of GaAs nanowires grown by molecular beam epitaxy Citation Details In-Document Search Title: Bismuth-induced phase control of GaAs nanowires grown by ...

  12. High-Efficiency GaAs Thin-Film Solar Cell Reliability | Department...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    GaAs Thin-Film Solar Cell Reliability High-Efficiency GaAs Thin-Film Solar Cell Reliability Presented at the PV Module Reliability Workshop, February 26 - 27 2013, Golden, Colorado ...

  13. Surface Chemistry of GaP(001) and InP(001) in Contact with Water...

    Office of Scientific and Technical Information (OSTI)

    Surface Chemistry of GaP(001) and InP(001) in Contact with Water Citation Details In-Document Search Title: Surface Chemistry of GaP(001) and InP(001) in Contact with Water ...

  14. Reactive codoping of GaAlInP compound semiconductors (Patent...

    Office of Scientific and Technical Information (OSTI)

    This site is a product of DOE's Office of Scientific and Technical Information (OSTI) and ... A GaAlInP compound semiconductor and a method of producing a GaAlInP compound ...

  15. Correlation of DLTS and Performance of GaInNAs Cells

    SciTech Connect

    Kurtz, S.; Johnston, S.; Friedman, D.; Ptak, A.; Geisz, J.; McMahon, W.; Olson, J.; Kibbler, A.; Crandall, R.; Ahrenkiel, R.; Kramer, C.; Young, M.

    2005-01-01

    A four-junction GaInP/GaAs/GaInAsN/Ge solar cell should be able to reach 40% efficiency if each of the junctions can be made with a quality similar to that demonstrated for GaAs. However, the GaInAsN subcell has shown poor performance. Deep-level transient spectroscopy (DLTS) can elucidate recombination centers in a material and could help identify the problem with the GaInAsN. So far, DLTS studies of GaInAsN have shown many peaks. In this paper we compare the performance of the GaInAsN solar cells with the DLTS spectra to identify which DLTS peak is correlated with the device performance.

  16. Structure and magnetic properties of Ce₃(Ni/Al/Ga)₁₁-A...

    Office of Scientific and Technical Information (OSTI)

    ...AlGa)-A new phase with the LaAl structure type Prev Next Title: Structure and magnetic properties of Ce(NiAlGa)-A new phase with the ...

  17. Contrasting Behavior of GaP(001) and InP(001) at the Interface...

    Office of Scientific and Technical Information (OSTI)

    Contrasting Behavior of GaP(001) and InP(001) at the Interface with Water Citation Details In-Document Search Title: Contrasting Behavior of GaP(001) and InP(001) at the Interface ...

  18. Electron-limiting defect complex in hyperdoped GaAs: The D D...

    Office of Scientific and Technical Information (OSTI)

    Electron-limiting defect complex in hyperdoped GaAs: The D D X center Prev Next Title: Electron-limiting defect complex in hyperdoped GaAs: The D D X center Authors: Ma, Jie ...

  19. Coexistence of charge-density wave and ferromagnetism in Ni2MnGa...

    Office of Scientific and Technical Information (OSTI)

    Coexistence of charge-density wave and ferromagnetism in Ni2MnGa Citation Details In-Document Search Title: Coexistence of charge-density wave and ferromagnetism in Ni2MnGa ...

  20. Novel photoaffinity ligands for the GA-receptor

    SciTech Connect

    Suttle, J.C.; Hultstrand, J.F.; Tanaka, F.S. )

    1990-05-01

    Previous studies from this laboratory have shown that certain N-substituted phthalimides (NSPs) exhibit GA-like activity in a range of specific bioassays and that bioactive NSPs compete with ({sup 3}H)-GA{sub 4} for soluble binding sites in cucumber homogenates. As such, these compounds may prove useful in the purification and characterization of GA receptor proteins. To this end, five azido-NSPs have been synthesized and are currently being screened for biological activity and photochemical stability. Three azido-NSPs elicit {alpha}-amylase production in barley half-seeds and stimulate tissue elongation in d{sub 5} maize, lettuce, sunflower, and soybean. Further evaluations are in progress and these data as well as the utility of these compounds as photo-affinity ligands will be discussed.